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Sample records for molecular materials thin-film

  1. Preface: Thin films of molecular organic materials

    NASA Astrophysics Data System (ADS)

    Fraxedas, J.

    2008-03-01

    This special issue is devoted to thin films of molecular organic materials and its aim is to assemble numerous different aspects of this topic in order to reach a wide scientific audience. Under the term 'thin films', structures with thicknesses spanning from one monolayer or less up to several micrometers are included. In order to narrow down this relaxed definition (how thin is thin?) I suggest joining the stream that makes a distinction according to the length scale involved, separating nanometer-thick films from micrometer-thick films. While the physical properties of micrometer-thick films tend to mimic those of bulk materials, in the low nanometer regime new structures (e.g., crystallographic and substrate-induced phases) and properties are found. However, one has to bear in mind that some properties of micrometer-thick films are really confined to the film/substrate interface (e.g. charge injection), and are thus of nanometer nature. Supported in this dimensionality framework, this issue covers the most ideal and model 0D case, a single molecule on a surface, through to the more application-oriented 3D case, placing special emphasis on the fascinating 2D domain that is monolayer assembly. Thus, many aspects will be reviewed, such as single molecules, self-organization, monolayer regime, chirality, growth, physical properties and applications. This issue has been intentionally restricted to small molecules, thus leaving out polymers and biomolecules, because for small molecules it is easier to establish structure--property relationships. Traditionally, the preparation of thin films of molecular organic materials has been considered as a secondary, lower-ranked part of the more general field of this class of materials. The coating of diverse surfaces such as silicon, inorganic and organic single crystals, chemically modified substrates, polymers, etc., with interesting molecules was driven by the potential applications of such molecular materials

  2. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  3. Magneto-optical activity in organic thin film materials

    NASA Astrophysics Data System (ADS)

    Vleugels, Rick; de Vega, Laura; Brullot, Ward; Verbiest, Thierry; Gómez-Lor, Berta; Gutierrez-Puebla, Enrique; Hennrich, Gunther

    2016-12-01

    A series of CF3-capped phenylacetylenes with varying symmetry is obtained by a conventional palladium-catalyzed cross-coupling protocol. The phenylacetylene targets form thin films both, liquid crystalline (LC) and crystalline in nature depending on their molecular structure. The magneto-optical activity of the resulting organic material is extraordinarily high as proved by Faraday rotation spectroscopy on thin film devices.

  4. Thin film dielectric composite materials

    DOEpatents

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  5. Tungsten-doped thin film materials

    DOEpatents

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  6. Microscale damping using thin film active materials

    NASA Astrophysics Data System (ADS)

    Kerrigan, Catherine A.; Ho, Ken K.; Mohanchandra, K. P.; Carman, Gregory P.

    2007-04-01

    This paper focuses on understanding and developing a new approach to dampen MEMS structures using both experiments and analytical techniques. Thin film Nitinol and thin film Terfenol-D are evaluated as a damping solution to the micro scale damping problem. Stress induced twin boundary motion in Nitinol is used to passively dampen potentially damaging vibrations. Magnetic domain wall motion is used to passively dampen vibration in Terfenol-D. The thin films of Nitinol, Nitinol/Silicon laminates and Nitinol/Terfenol-D/Nickel laminates have been produced using a sputter deposition process and damping properties have been evaluated. Dynamic testing shows substantial damping (tan δ) measurable in each case. Nitinol film samples were tested in the Differential Scanning Calorimetry (DSC) to determine phase transformation temperatures. The twin boundary mechanism by which energy absorption occurs is present at all points below the Austenite start temperature (approximately 69°C in our film) and therefore allows damping at cold temperatures where traditional materials fail. Thin film in the NiTi/Si laminate was found to produce substantially higher damping (tan δ = 0.28) due to the change in loading condition. The NiTi/Si laminate sample was tested in bending allowing the twin boundaries to be reset by cyclic tensile and compressive loads. The thin film Terfenol-D in the Nitinol/Terfenol-D/Nickel laminate was shown to produce large damping (tan δ = 0.2). In addition to fabricating and testing, an analytical model of a heterogeneous layered thin film damping material was developed and compared to experimental work.

  7. Polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  8. Synthesis of thin films and materials utilizing a gaseous catalyst

    DOEpatents

    Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

    2013-10-29

    A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

  9. Porous Organic Cage Thin Films and Molecular-Sieving Membranes.

    PubMed

    Song, Qilei; Jiang, Shan; Hasell, Tom; Liu, Ming; Sun, Shijing; Cheetham, Anthony K; Sivaniah, Easan; Cooper, Andrew I

    2016-04-06

    Porous organic cage molecules are fabricated into thin films and molecular-sieving membranes. Cage molecules are solution cast on various substrates to form amorphous thin films, with the structures tuned by tailoring the cage chemistry and processing conditions. For the first time, uniform and pinhole-free microporous cage thin films are formed and demonstrated as molecular-sieving membranes for selective gas separation.

  10. Elastic Properties of Molecular Glass Thin Films

    NASA Astrophysics Data System (ADS)

    Torres, Jessica

    2011-12-01

    This dissertation provides a fundamental understanding of the impact of bulk polymer properties on the nanometer length scale modulus. The elastic modulus of amorphous organic thin films is examined using a surface wrinkling technique. Potential correlations between thin film behavior and intrinsic properties such as flexibility and chain length are explored. Thermal properties, glass transition temperature (Tg) and the coefficient of thermal expansion, are examined along with the moduli of these thin films. It is found that the nanometer length scale behavior of flexible polymers correlates to its bulk Tg and not the polymers intrinsic size. It is also found that decreases in the modulus of ultrathin flexible films is not correlated with the observed Tg decrease in films of the same thickness. Techniques to circumvent reductions from bulk modulus were also demonstrated. However, as chain flexibility is reduced the modulus becomes thickness independent down to 10 nm. Similarly for this series minor reductions in T g were obtained. To further understand the impact of the intrinsic size and processing conditions; this wrinkling instability was also utilized to determine the modulus of small organic electronic materials at various deposition conditions. Lastly, this wrinkling instability is exploited for development of poly furfuryl alcohol wrinkles. A two-step wrinkling process is developed via an acid catalyzed polymerization of a drop cast solution of furfuryl alcohol and photo acid generator. The ability to control the surface topology and tune the wrinkle wavelength with processing parameters such as substrate temperature and photo acid generator concentration is also demonstrated. Well-ordered linear, circular, and curvilinear patterns are also obtained by selective ultraviolet exposure and polymerization of the furfuryl alcohol film. As a carbon precursor a thorough understanding of this wrinkling instability can have applications in a wide variety of

  11. Optoelectronic Nanocomposite Materials for Thin Film Photovoltaics

    DTIC Science & Technology

    2012-06-01

    CdTe and ZnO single-phase thin films , nanocomposite films ...for the CdTe -ZnO thin film system under these conditions. c. Optical Absorption The films produced in the present study consistently exhibited...optical absorbance spectra collected from CdTe -ZnO multilayer nanocomposite thin films . The effect of CdTe layer thickness used per deposition cycle

  12. PHYSICAL EVALUATION OF THIN FILMS OF SOLID STATE MATERIALS.

    DTIC Science & Technology

    microscopy and X-ray and electron diffraction methods. These materials include vapor deposited thin films of boron and boron phosphide on single...crystal silicon substrates via halide reduction, electrodeposits of copper onto single crystal copper substrates, thin films of carbon deposited onto

  13. Optical Properties of Thin Film Molecular Mixtures

    NASA Technical Reports Server (NTRS)

    Jaworske, Donald A.; Shumway, Dean A.; Lyons, Valerie (Technical Monitor)

    2002-01-01

    Thin films composed of molecular mixtures of metal and dielectric are being considered for use as solar selective coatings for a variety of space power applications. By controlling the degree of molecular mixing, the solar selective coatings can be tailored to have the combined properties of high solar absorptance, alpha, and low infrared emittance, epsilon. On orbit, these combined properties would simultaneously maximize the amount of solar energy captured by the coating and minimize the amount of thermal energy radiated. Mini-satellites equipped with solar collectors coated with these cermet coatings may utilize the captured heat energy to power a heat engine to generate electricity, or to power a thermal bus that directs heat to remote regions of the spacecraft. Early work in this area identified the theoretical boundary conditions needed to operate a Carnot cycle in space, including the need for a solar concentrator, a solar selective coating at the heat inlet of the engine, and a radiator. A solar concentrator that can concentrate sunlight by a factor of 100 is ideal. At lower values, the temperature of the solar absorbing surface becomes too low for efficient heat engine operation, and at higher values, cavity type heat receivers become attractive. In designing the solar selective coating, the wavelength region yielding high solar absorptance must be separated from the wavelength region yielding low infrared emittance by establishing a sharp transition in optical properties. In particular, a sharp transition in reflectance is desired in the infrared to achieve the desired optical performance. For a heat engine operating at 450C, a sharp transition at 1.8 micrometers is desired. The radiator completes the heat flow through the Carnot cycle. Additional work has been done supporting the use of molecular mixtures for terrestrial applications. Sputter deposition provides a means to apply coatings to the tubes that carry a working fluid at the focus of trough

  14. Molecular release from patterned nanoporous gold thin films

    NASA Astrophysics Data System (ADS)

    Kurtulus, Ozge; Daggumati, Pallavi; Seker, Erkin

    2014-05-01

    Nanostructured materials have shown significant potential for biomedical applications that require high loading capacity and controlled release of drugs. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a promising novel material that benefits from compatibility with microfabrication, tunable pore morphology, electrical conductivity, well-established gold-thiol conjugate chemistry, and biocompatibility. While np-Au's non-biological applications are abundant, its performance in the biomedical field is nascent. In this work, we employ a combination of techniques including nanoporous thin film synthesis, quantitative electron microscopy, fluorospectrometry, and electrochemical surface characterization to study loading capacity and molecular release kinetics as a function of film properties and discuss underlying mechanisms. The sub-micron-thick sputter-coated nanoporous gold films provide small-molecule loading capacities up to 1.12 μg cm-2 and molecular release half-lives between 3.6 hours to 12.8 hours. A systematic set of studies reveals that effective surface area of the np-Au thin films on glass substrates plays the largest role in determining loading capacity. The release kinetics on the other hand depends on a complex interplay of micro- and nano-scale morphological features.Nanostructured materials have shown significant potential for biomedical applications that require high loading capacity and controlled release of drugs. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a promising novel material that benefits from compatibility with microfabrication, tunable pore morphology, electrical conductivity, well-established gold-thiol conjugate chemistry, and biocompatibility. While np-Au's non-biological applications are abundant, its performance in the biomedical field is nascent. In this work, we employ a combination of techniques including nanoporous thin film synthesis, quantitative electron microscopy

  15. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, R.B.

    1987-05-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  16. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, Raoul B.

    1988-01-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  17. Optical Properties of Thin Film Molecular Mixtures

    NASA Technical Reports Server (NTRS)

    Jaworske, Donald A.; Shumway, Dean A.

    2003-01-01

    Thin films composed of molecular mixtures of metal and dielectric are being considered for use as solar selective coatings for a variety of space power applications. By controlling the degree of molecular mixing, the solar selective coatings can be tailored to have the combined properties of high solar absorptance, , and low infrared emittance, . On orbit, these combined properties would simultaneously maximize the amount of solar energy captured by the coating and minimize the amount of thermal energy radiated. Mini-satellites equipped with solar collectors coated with these cermet coatings may utilize the captured heat energy to power a heat engine to generate electricity, or to power a thermal bus that directs heat to remote regions of the spacecraft. Early work in this area identified the theoretical boundary conditions needed to operate a Carnot cycle in space, including the need for a solar concentrator, a solar selective coating at the heat inlet of the engine, and a radiator.1 A solar concentrator that can concentrate sunlight by a factor of 100 is ideal. At lower values, the temperature of the solar absorbing surface becomes too low for efficient heat engine operation, and at higher values, cavity type heat receivers become attractive. In designing the solar selective coating, the wavelength region yielding high solar absorptance must be separated from the wavelength region yielding low infrared emittance by establishing a sharp transition in optical properties. In particular, a sharp transition in reflectance is desired in the infrared to achieve the desired optical performance. For a heat engine operating at 450 C, a sharp transition at 1.8 micrometers is desired.2 The radiator completes the heat flow through the Carnot cycle.

  18. Thin film thermocouples for high temperature measurement on ceramic materials

    NASA Technical Reports Server (NTRS)

    Holanda, Raymond

    1992-01-01

    Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high-heating-rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

  19. Patterns and conformations in molecularly thin films

    NASA Astrophysics Data System (ADS)

    Basnet, Prem B.

    Molecularly thin films have been a subject of great interest for the last several years because of their large variety of industrial applications ranging from micro-electronics to bio-medicine. Additionally, molecularly thin films can be used as good models for biomembrane and other systems where surfaces are critical. Many different kinds of molecules can make stable films. My research has considered three such molecules: a polymerizable phospholipid, a bent-core molecules, and a polymer. One common theme of these three molecules is chirality. The phospolipid molecules studied here are strongly chiral, which can be due to intrinsically chiral centers on the molecules and also due to chiral conformations. We find that these molecules give rise to chiral patterns. Bent-core molecules are not intrinsically chiral, but individual molecules and groups of molecules can show chiral structures, which can be changed by surface interactions. One major, unconfirmed hypothesis for the polymer conformation at surface is that it forms helices, which would be chiral. Most experiments were carried out at the air/water interface, in what are called Langmuir films. Our major tools for studying these films are Brewster Angle Microscopy (BAM) coupled with the thermodynamic information that can be deduced from surface pressure isotherms. Phospholipids are one of the important constituents of liposomes -- a spherical vesicle com-posed of a bilayer membrane, typically composed of a phospholipid and cholesterol bilayer. The application of liposomes in drug delivery is well-known. Crumpling of vesicles of polymerizable phospholipids has been observed. With BAM, on Langmuir films of such phospholipids, we see novel spiral/target patterns during compression. We have found that both the patterns and the critical pressure at which they formed depend on temperature (below the transition to a i¬‘uid layer). Bent-core liquid crystals, sometimes knows as banana liquid crystals, have drawn

  20. Physical Properties of Thin Film Semiconducting Materials

    NASA Astrophysics Data System (ADS)

    Bouras, N.; Djebbouri, M.; Outemzabet, R.; Sali, S.; Zerrouki, H.; Zouaoui, A.; Kesri, N.

    2005-10-01

    The physics and chemistry of semiconducting materials is a continuous question of debate. We can find a large stock of well-known properties but at the same time, many things are not understood. In recent years, porous silicon (PS-Si), diselenide of copper and indium (CuInSe2 or CIS) and metal oxide semiconductors like tin oxide (SnO2) and zinc oxide (ZnO) have been subjected to extensive studies because of the rising interest their potential applications in fields such as electronic components, solar panels, catalysis, gas sensors, in biocompatible materials, in Li-based batteries, in new generation of MOSFETS. Bulk structure and surface and interface properties play important roles in all of these applications. A deeper understanding of these fundamental properties would impact largely on technological application performances. In our laboratory, thin films of undoped and antimony-doped films of tin oxide have been deposited by chemical vapor deposition. Spray pyrolysis was used for ZnO. CIS was prepared by flash evaporation or close-space vapor transport. Some of the deposition parameters have been varied, such as substrate temperature, time of deposition (or anodization), and molar concentration of bath preparation. For some samples, thermal annealing was carried out under oxygen (or air), under nitrogen gas and under vacuum. Deposition and post-deposition parameters are known to strongly influence film structure and electrical resistivity. We investigated the influence of film thickness and thermal annealing on structural optical and electrical properties of the films. Examination of SnO2 by x-ray diffraction showed that the main films are polycrystalline with rutile structure. The x-ray spectra of ZnO indicated a hexagonal wurtzite structure. Characterizations of CIS films with compositional analysis, x-ray diffraction, scanning microscopy, spectrophotometry, and photoluminescence were carried out.

  1. Molecular tailoring of interfaces for thin film on substrate systems

    NASA Astrophysics Data System (ADS)

    Grady, Martha Elizabeth

    Thin film on substrate systems appear most prevalently within the microelectronics industry, which demands that devices operate in smaller and smaller packages with greater reliability. The reliability of these multilayer film systems is strongly influenced by the adhesion of each of the bimaterial interfaces. During use, microelectronic components undergo thermo-mechanical cycling, which induces interfacial delaminations leading to failure of the overall device. The ability to tailor interfacial properties at the molecular level provides a mechanism to improve thin film adhesion, reliability and performance. This dissertation presents the investigation of molecular level control of interface properties in three thin film-substrate systems: photodefinable polyimide films on passivated silicon substrates, self-assembled monolayers at the interface of Au films and dielectric substrates, and mechanochemically active materials on rigid substrates. For all three materials systems, the effect of interfacial modifications on adhesion is assessed using a laser-spallation technique. Laser-induced stress waves are chosen because they dynamically load the thin film interface in a precise, noncontacting manner at high strain rates and are suitable for both weak and strong interfaces. Photodefinable polyimide films are used as dielectrics in flip chip integrated circuit packages to reduce the stress between silicon passivation layers and mold compound. The influence of processing parameters on adhesion is examined for photodefinable polyimide films on silicon (Si) substrates with three different passivation layers: silicon nitride (SiNx), silicon oxynitride (SiOxNy), and the native silicon oxide (SiO2). Interfacial strength increases when films are processed with an exposure step as well as a longer cure cycle. Additionally, the interfacial fracture energy is assessed using a dynamic delamination protocol. The high toughness of this interface (ca. 100 J/m2) makes it difficult

  2. Thin film morphology of organic electronic materials

    NASA Astrophysics Data System (ADS)

    Hudson, S. D.; Kline, R. J.; Delongchamp, D. M.; Jurchescu, O. D.; Gundlach, D. J.; Richter, L. J.

    2009-03-01

    The crystal orientation and morphology of a polythiophene (pBTTT) and an anthradithiophene (diF-TEADT, a pentacene analog) in thin films have been explored by TEM, SEM, AFM, GISAXD, NEXAFS, polarized FTIR and ellipsometry. The orientation has a striking influence on the performance of thin film transistors. We show that solution casting and annealing conditions have a significant effect on the morphology of pBTTT. Correlations between film surface step morphology and crystal orientation are determined. Interfacial interactions with the substrate (gold, silica, or fluorinated sam) govern the crystal orientation and crystal aggregate morphology of diF-TESADT. Depending on this orientation, the carrier mobility spans from approximately 0.001 cm^2/Vs to 0.4 cm^2/Vs. Epitaxial relationships within crystal aggregates are observed.

  3. Packaging material for thin film lithium batteries

    DOEpatents

    Bates, John B.; Dudney, Nancy J.; Weatherspoon, Kim A.

    1996-01-01

    A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

  4. Polycrystalline thin film materials and devices

    NASA Astrophysics Data System (ADS)

    Baron, B. N.; Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    1991-11-01

    Results and conclusions of Phase 1 of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe2 and CdTe solar cells. The kinetics of the formation of CuInSe2 by selenization with hydrogen selenide was investigated and a CuInSe2/Cds solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe2 films and a cell efficiency of 7 percent. Detailed investigations of the open circuit voltage of CuInSe2 solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe2 thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe2 is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10 percent can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm(exp 2) are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  5. Contact potential difference measurements of doped organic molecular thin films

    NASA Astrophysics Data System (ADS)

    Chan, Calvin; Gao, Weiying; Kahn, Antoine

    2004-07-01

    The possibility of nonequilibrium conditions in doped organic molecular thin films is investigated using a combination of ultraviolet photoemission spectroscopy (UPS) and contact potential difference measurements. Surface or interface photovoltage is of particular concern in materials with large band gap and appreciable band (or energy level) bending at interfaces. We investigate here zinc phthalocyanine (ZnPc) and N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'biphenyl-4,4'' diamine (α-NPD) p-doped with the acceptor molecule, tetrafluorotetracyanoquinodimethane (F4-TCNQ). In both cases, we observe an upward movement of the vacuum level away from the metal interface with respect to the Fermi level, consistent with the formation of a depletion region. We show that photovoltage is not a significant factor in these doped films, under ultraviolet illumination during UPS. We suggest that the carrier recombination rate in organic films is sufficiently fast to exclude any photovoltage effects at room temperature. .

  6. Thin film/liquid crystal composite optical materials

    NASA Astrophysics Data System (ADS)

    Sit, Jeremy C.; Brett, Michael J.

    2004-01-01

    The classic challenge faced by researchers dealing with liquid crystals is to control the LC molecular orientation and hence optimise the optical properties. Well known techniques for influencing LC texture include the use of surfactants or thin film alignment layers. The underlying limitation common to such techniques is that while excellent control of LC anchoring at the substrate surface is achieved, molecular alignment in the bulk of the LC is reliant entirely upon the cooperative effects and resulting elastic properties of the LC material. Generally, this has worked sufficiently well in practice, but unfortunately, the complete dependence on the intermolecular forces of the LC means that unencumbered, reversible switching is not always possible. Our group has taken a unique approach to influence LC orientation. Using glancing angle deposition (GLAD), highly porous thin films can be grown possessing isolated columnar microstructure whose shape can be tailored via substrate motion during film deposition. In particular, we can grow films of helical columns with controlled pitch and handedness. These films exhibit circular dichroism and optical activity similar to that seen in chiral LCs. The high porosity of GLAD films permits fluids such as LCs to be introduced into the pores, leading to a new type of hybrid optical material. Most significantly, initial work showed that when achiral LCs were embedded in chiral GLAD media, there was an enhancement of the circular dichroism and optical activity as the chiral GLAD film served to induce a chiral orientation in the LC. In this report, we start with a brief overview of the GLAD process and some relevant optical studies, leading to a review of GLAD/LC hybrid materials, switchable devices, and finally, a discussion of recent research optical characterisation and some ideas for future avenues of investigation.

  7. Thin film/liquid crystal composite optical materials

    NASA Astrophysics Data System (ADS)

    Sit, Jeremy C.; Brett, Michael J.

    2003-12-01

    The classic challenge faced by researchers dealing with liquid crystals is to control the LC molecular orientation and hence optimise the optical properties. Well known techniques for influencing LC texture include the use of surfactants or thin film alignment layers. The underlying limitation common to such techniques is that while excellent control of LC anchoring at the substrate surface is achieved, molecular alignment in the bulk of the LC is reliant entirely upon the cooperative effects and resulting elastic properties of the LC material. Generally, this has worked sufficiently well in practice, but unfortunately, the complete dependence on the intermolecular forces of the LC means that unencumbered, reversible switching is not always possible. Our group has taken a unique approach to influence LC orientation. Using glancing angle deposition (GLAD), highly porous thin films can be grown possessing isolated columnar microstructure whose shape can be tailored via substrate motion during film deposition. In particular, we can grow films of helical columns with controlled pitch and handedness. These films exhibit circular dichroism and optical activity similar to that seen in chiral LCs. The high porosity of GLAD films permits fluids such as LCs to be introduced into the pores, leading to a new type of hybrid optical material. Most significantly, initial work showed that when achiral LCs were embedded in chiral GLAD media, there was an enhancement of the circular dichroism and optical activity as the chiral GLAD film served to induce a chiral orientation in the LC. In this report, we start with a brief overview of the GLAD process and some relevant optical studies, leading to a review of GLAD/LC hybrid materials, switchable devices, and finally, a discussion of recent research optical characterisation and some ideas for future avenues of investigation.

  8. An investigation of clustering during the early stages of sculptured thin film growth via molecular dynamics

    NASA Astrophysics Data System (ADS)

    Yurick, Thomas J., Jr.

    2005-11-01

    As nano-technology continues to revolutionize our daily lives, nano-engineered materials take on a more prominent role. One example of a nano-engineered material is that of sculptured thin films. Sculptured thin films or STFs are a special class of thin films that have a characteristic shape imparted to them on the nano-scale, during the deposition process. This characteristic shape can be that of a zig-zag, chevron, or helices. Applications for these STFs vary from micro-electronics to medical applications, however, it is most likely that the best use of them is yet to be discovered. As with any engineering problem, simulation can play a key role in gaining understanding and insight. This is certainly true with the deposition of STFs as well. However, the simulation of an STF entails the capability of simulating each and every atom that makes up the STF. It is the manipulation of the impinging film atoms, during the deposition, that produce the characteristic shape. Luckily, today's fast computer processors coupled with an atomistic simulation method called Molecular Dynamics allows for such a simulation. This work focused on the use of a custom parallel Molecular Dynamics program for the simulation of cluster formation during very early stages of STF growth. Once the simulated thin film morphology was obtained, a qualitative analysis of the simulated thin film morphology was performed by visualizing the thin film surface. A qualitative analysis of the thin film morphology was also performed by estimating the fractal dimension of the simulated surface via the Slit-Island Method.

  9. Molecularly Oriented Polymeric Thin Films for Space Applications

    NASA Technical Reports Server (NTRS)

    Fay, Catharine C.; Stoakley, Diane M.; St.Clair, Anne K.

    1997-01-01

    The increased commitment from NASA and private industry to the exploration of outer space and the use of orbital instrumentation to monitor the earth has focused attention on organic polymeric materials for a variety of applications in space. Some polymeric materials have exhibited short-term (3-5 yr) space environmental durability; however, future spacecraft are being designed with lifetimes projected to be 10-30 years. This gives rise to concern that material property change brought about during operation may result in unpredicted spacecraft performance. Because of their inherent toughness and flexibility, low density, thermal stability, radiation resistance and mechanical strength, aromatic polyimides have excellent potential use as advanced materials on large space structures. Also, there exists a need for high temperature (200-300 C) stable, flexible polymeric films that have high optical transparency in the 300-600nm range of the electromagnetic spectrum. Polymers suitable for these space applications were fabricated and characterized. Additionally, these polymers were molecularly oriented to further enhance their dimensional stability, stiffness, elongation and strength. Both unoriented and oriented polymeric thin films were also cryogenically treated to temperatures below -184 C to show their stability in cold environments and determine any changes in material properties.

  10. Molecular solution processing of metal chalcogenide thin film solar cells

    NASA Astrophysics Data System (ADS)

    Yang, Wenbing

    The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (CISS) and kesterite Cu2ZnSn(S,Se) 4 organized in chronological order. Chalcopyrite CISS is a very promising material. It has been demonstrated to achieve the highest efficiency among thin film solar cells. Scaled-up industry production at present has reached the giga-watt per year level. The process however mainly relies on vacuum systems which account for a significant percentage of the manufacturing cost. In the first section of this dissertation, hydrazine based solution processed CISS has been explored. The focus of the research involves the procedures to fabricate devices from solution. The topics covered in Chapter 2 include: precursor solution synthesis with a focus on understanding the solution chemistry, CISS absorber formation from precursor, properties modification toward favorable device performance, and device structure innovation toward tandem device. For photovoltaics to have a significant impact toward meeting energy demands, the annual production capability needs to be on TW-level. On such a level, raw materials supply of rare elements (indium for CIS or tellurium for CdTe) will be the bottleneck limiting the scalability. Replacing indium with zinc and tin, earth abundant kesterite CZTS exhibits great potential to reach the goal of TW-level with no limitations on raw material availability. Chapter 3 shows pioneering work towards solution processing of CZTS film at low temperature. The solution processed devices show performances which rival vacuum

  11. Growth of thin films of organic nonlinear optical materials by vapor growth processes - An overview and examination of shortfalls

    NASA Technical Reports Server (NTRS)

    Frazier, D. O.; Penn, B. G.; Witherow, W. K.; Paley, M. S.

    1991-01-01

    Research on the growth of second- and third-order nonlinear optical (NLO) organic thin film by vapor deposition is reviewed. Particular attention is given to the experimental methods for growing thin films of p-chlorophenylurea, diacetylenes, and phthalocyanines; characteristics of the resulting films; and approaches for advancing thin film technology. It is concluded that the growth of NLO thin films by vapor processes is a promising method for the fabrication of planar waveguides for nonlinear optical devices. Two innovative approaches are proposed including a method of controlling the input beam frequency to maximize nonlinear effects in thin films and single crystals, and the alternate approach to the molecular design of organic NLO materials by increasing the transition dipole moment between ground and excited states of the molecule.

  12. Electrical and optical properties of C46H22N8O4KM (M=Co, Fe, Pb) molecular-material thin films prepared by the vacuum thermal evaporation technique.

    PubMed

    Sánchez-Vergara, M E; Ruiz Farfán, M A; Alvarez, J R; Ponce Pedraza, A; Ortiz, A; Alvarez Toledano, C

    2007-03-01

    In this work, the synthesis of new materials formed from metallic phthalocyanines (Pcs) and double potassium salt from 1,8-dihydroxianthraquinone is reported. The newly synthesized materials were characterized by scanning electron microscope (SEM), atomic force microscopy (AFM), infrared (IR) and Ultraviolet-visible (UV-vis) spectroscopy. The powder and thin-film samples of the synthesized materials, deposited by vacuum thermal evaporation, show the same intra-molecular bonds as in the IR spectroscopy studies, which suggests that the thermal evaporation process does not alter these bonds. The effect of temperature on conductivity and electrical conduction mechanism was measured in the thin films (approximately 137 nm thickness). They showed a semiconductor-like behaviour with an optical activation energy arising from indirect transitions of 2.15, 2.13 and 3.6eV for the C(46)H(22)N(8)O(4)KFe, C(46)H(22)N(8)O(4)KPb and C(46)H(22)N(8)O(4)KCo thin films.

  13. YCo5±x thin films with perpendicular anisotropy grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sharma, S.; Hildebrandt, E.; Sharath, S. U.; Radulov, I.; Alff, L.

    2017-06-01

    The synthesis conditions of buffer-free (00l) oriented YCo5 and Y2Co17 thin films onto Al2O3 (0001) substrates have been explored by molecular beam epitaxy (MBE). The manipulation of the ratio of individual atomic beams of Yttrium, Y and Cobalt, Co, as well as growth rate variations allows establishing a thin film phase diagram. Highly textured YCo5±x thin films were stabilized with saturation magnetization of 517 emu/cm3 (0.517 MA/m), coercivity of 4 kOe (0.4 T), and anisotropy constant, K1, equal to 5.34 ×106 erg/cm3 (0.53 MJ/m3). These magnetic parameters and the perpendicular anisotropy obtained without additional underlayers make the material system interesting for application in magnetic recording devices.

  14. Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Gölden, D.; Hildebrandt, E.; Alff, L.

    2017-01-01

    A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

  15. Thin film materials and devices for resistive temperature sensing applications

    NASA Astrophysics Data System (ADS)

    Basantani, Hitesh A.

    Thin films of vanadium oxide (VOx) and hydrogenated amorphous silicon (a-Si:H) are the two dominant material systems used in resistive infrared radiation detectors (microbolometers) for sensing long wave infrared (LWIR) wavelengths in the 8--14 microm range. Typical thin films of VO x (x < 2) currently used in the bolometer industry have a magnitude of temperature coefficient of resistance (TCR) between 2%/K -- 3%/K. In contrast, thin films of hydrogenated germanium (SiGe:H) have |TCR| between 3%/K to 4%/K. Devices made from either of these materials have resulted in similar device performance with NETD ≈ 25 mK. The performance of the microbolometers is limited by the electronic noise, especially 1/f noise. Therefore, regardless of the choice of bolometer sensing material and read out circuitry, manufacturers are constantly striving to reduce 1/f noise while simultaneously increasing TCR to give better signal to noise ratios in their bolometers and ultimately, better image quality with more thermal information to the end user. In this work, thin films of VOx and hydrogenated germanium (Ge:H), having TCR values > 4 %/K are investigated as potential candidates for higher sensitivity next generation of microbolometers. Thin films of VO x were deposited by Biased Target Ion Beam Deposition (BTIBD) (˜85 nm thick). Electrical characterization of lateral resistor structures showed resistivity ranging from 104 O--cm to 2.1 x 104 O--cm, TCR varying from --4%/K to --5%/K, normalized Hooge parameter (alphaH/n) of 5 x 10 -21 to 5 x 10-18 cm3. Thin films of Ge:H were deposited by plasma enhanced chemical vapor deposition (PECVD) by incorporating an increasing amount of crystal fraction in the growing thin films. Thin films of Ge:H having a mixed phase, amorphous + nanocrystalline, having a |TCR| > 6 %/K were deposited with resistivity < 2,300 O--cm and a normalized Hooge's parameter 'alphaH/n' < 2 x 10-20 cm3. Higher TCR materials are desired, however, such materials have

  16. Molecular-dynamics simulation of thin-film growth

    NASA Astrophysics Data System (ADS)

    Schneider, M.; Schuller, I. K.; Rahman, A.

    1987-01-01

    The epitaxial growth of thin films has been studied by molecular-dynamics computer simulation. In these simulations atoms are projected towards a temperature-controlled substrate, and the equations of motion of all atoms are solved for a given interaction potential. The calculations give insight into the microscopic structure of thin films, the dynamics of the adsorption process, and they help answer the way in which substrate temperature, form of the substrate, flux of impinging atoms, and form of the interaction potential, affect epitaxial growth. Simulations were performed for monatomic and binary systems with spherically symmetric atomic interactions, and for systems in which the atoms are interacting via a three-body potential to simulate the epitaxial growth of silicon.

  17. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  18. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  19. Thin film microelectronics materials production in the vacuum of space

    NASA Astrophysics Data System (ADS)

    Ignatiev, A.; Sterling, M.; Horton, C.; Freundlich, A.; Pei, S.; Hill, R.

    1997-01-01

    The international Space Station era will open up a new dimension in the use of one of the unique attributes of space, vacuum, for the production of advanced semiconductor materials and devices for microelectronics applications. Ultra-vacuum is required for the fabrication in thin film form of high quality semiconductors. This can be accomplished behind a free flying platform similar to the current Wake Shield Facility which is specifically designed to support in-space production. The platform will require apparatus for thin film growth, a robotics interface to allow for the change out of raw materials and the harvesting of finished product, and a servicing plant incorporating Space Station that will support long-term utilization of the platform.

  20. Characterization of Thin Films by XAFS: Application to Spintronics Materials

    SciTech Connect

    Heald, Steve M.; Kaspar, Tiffany C.; Droubay, Timothy C.; Chambers, Scott A.

    2009-10-25

    X-ray absorption fine structure (XAFS) has proven very valuable in characterizing thin films. This is illustrated with some examples from the area of diluted magnetic semiconductor (DMS) materials for spintronics applications. A promising route to DMS materials is doping of oxides such as TiO2 and ZnO with magnetic atoms such as Co. These can be grown as epitaxial thin films on various substrates. XAFS is especially valuable for characterizing the dopant atoms. The near edge region is sensitive to the symmetry of the bonding and valence of the dopants, and the extended XAFS can determine the details of the lattice site. XAFS is also valuable for detecting metallic nanoparticles. These can be difficult to detect by other methods, and can give a spurious magnetic signal. The power of XAFS is illustrated by examples from studies on Co doped ZnO films.

  1. Supercritical fluid molecular spray thin films and fine powders

    DOEpatents

    Smith, Richard D.

    1988-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. The solvent is vaporized and pumped away. Solution pressure is varied to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solution temperature is varied in relation to formation of a two-phase system during expansion to control porosity of the film or powder. A wide variety of film textures and powder shapes are produced of both organic and inorganic compounds. Films are produced with regular textural feature dimensions of 1.0-2.0 .mu.m down to a range of 0.01 to 0.1 .mu.m. Powders are formed in very narrow size distributions, with average sizes in the range of 0.02 to 5 .mu.m.

  2. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, III, Jerome J.; Halpern, Bret L.

    1993-01-01

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  3. Thin films of copper antimony sulfide: A photovoltaic absorber material

    SciTech Connect

    Ornelas-Acosta, R.E.; Shaji, S.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Krishnan, B.

    2015-01-15

    Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

  4. Electronic processes in thin-film PV materials. Final report

    SciTech Connect

    Taylor, P.C.; Chen, D.; Chen, S.L.

    1998-07-01

    The electronic and optical processes in an important class of thin-film PV materials, hydrogenated amorphous silicon (a-Si:H) and related alloys, have been investigated using several experimental techniques designed for thin-film geometries. The experimental techniques include various magnetic resonance and optical spectroscopies and combinations of these two spectroscopies. Two-step optical excitation processes through the manifold of silicon dangling bond states have been identifies as important at low excitation energies. Local hydrogen motion has been studied using nuclear magnetic resonance techniques and found to be much more rapid than long range diffusion as measured by secondary ion mass spectroscopy. A new metastable effect has been found in a-Si:H films alloyed with sulfur. Spin-one optically excited states have been unambiguously identified using optically detected electron spin resonance. Local hydrogen bonding in microcrystalline silicon films has been studied using NMR.

  5. Thin Film Composite Materials, Phase 2

    DTIC Science & Technology

    1987-01-01

    were Kevlar coated with silicone, EPDM , or neoprene rubber, with the following results: 1. Tensile testing of coated Kevlar fabric is very difficult...materials. 2. A method was developed for measuring water vapor permeability. Neoprene and EPDM are promising as coatings with good water resistance; however...barrier to prevent loss of the working fluid. The outside would be coated with a high emissivity material that would also shield the Kevlar from degrading

  6. Deposition of thin films of multicomponent materials

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor)

    1993-01-01

    Composite films of multicomponent materials, such as oxides and nitrides, e.g., lead zirconate titanate, are deposited by dc magnetron sputtering, employing a rotating substrate holder, which rotates relative to a plurality of targets, one target for each metal element of the multicomponent material. The sputtering is carried out in a reactive atmosphere. The substrates on which the layers are deposited are at ambient temperature. Following deposition of the composite film, the film is heated to a temperature sufficient to initiate a solid state reaction and form the final product, which is substantially single phase and substantially homogeneous.

  7. Thin film thermocouples for thermoelectric characterization of nanostructured materials

    NASA Astrophysics Data System (ADS)

    Grayson, Matthew; Zhou, Chuanle; Varrenti, Andrew; Chyung, Seung Hye; Long, Jieyi; Memik, Seda

    2011-03-01

    The increased use of nanostructured materials as thermoelectrics requires reliable and accurate characterization of the anisotropic thermal coefficients of small structures, such as superlattices and quantum wire networks. Thin evaporated metal films can be used to create thermocouples with a very small thermal mass and low thermal conductivity, in order to measure thermal gradients on nanostructures and thereby measure the thermal conductivity and the Seebeck coefficient of the nanostructure. In this work we confirm the known result that thin metal films have lower Seebeck coefficients than bulk metals, and we also calibrate the Seebeck coefficient of a thin-film Ni/Cr thermocouple with 50 nm thickness, showing it to have about 1/4 the bulk value. We demonstrate reproducibility of this thin-filmSeebeck coefficient on multiple substrates, and we show that this coefficient does, in fact, change as a function of film thickness. We will discuss prototype measurement designs and preliminary work as to how these thin films can be used to study both Seebeck coefficients and thermal conductivities of superlattices in various geometries. The same technology can in principle be used on integrated circuits for thermal mapping, under the name ``Integrated On-Chip Thermocouple Array'' (IOTA).

  8. Waveguides in Thin Film Polymeric Materials

    NASA Technical Reports Server (NTRS)

    Sakisov, Sergey; Abdeldayem, Hossin; Venkateswarlu, Putcha; Teague, Zedric

    1996-01-01

    Results on the fabrication of integrated optical components in polymeric materials using photo printing methods will be presented. Optical waveguides were fabricated by spin coating preoxidized silicon wafers with organic dye/polymer solution followed by soft baking. The waveguide modes were studied using prism coupling technique. Propagation losses were measured by collecting light scattered from the trace of a propagation mode by either scanning photodetector or CCD camera. We observed the formation of graded index waveguides in photosensitive polyimides after exposure of UV light from a mercury arc lamp. By using a theoretical model, an index profile was reconstructed which is in agreement with the profile reconstructed by the Wentzel-Kramers-Brillouin calculation technique using a modal spectrum of the waveguides. Proposed mechanism for the formation of the graded index includes photocrosslinking followed by UV curing accompanied with optical absorption increase. We also developed the prototype of a novel single-arm double-mode interferometric sensor based on our waveguides. It demonstrates high sensitivity to the chance of ambient temperature. The device can find possible applications in aeropropulsion control systems.

  9. Waveguides in Thin Film Polymeric Materials

    NASA Technical Reports Server (NTRS)

    Sakisov, Sergey; Abdeldayem, Hossin; Venkateswarlu, Putcha; Teague, Zedric

    1996-01-01

    Results on the fabrication of integrated optical components in polymeric materials using photo printing methods will be presented. Optical waveguides were fabricated by spin coating preoxidized silicon wafers with organic dye/polymer solution followed by soft baking. The waveguide modes were studied using prism coupling technique. Propagation losses were measured by collecting light scattered from the trace of a propagation mode by either scanning photodetector or CCD camera. We observed the formation of graded index waveguides in photosensitive polyimides after exposure of UV light from a mercury arc lamp. By using a theoretical model, an index profile was reconstructed which is in agreement with the profile reconstructed by the Wentzel-Kramers-Brillouin calculation technique using a modal spectrum of the waveguides. Proposed mechanism for the formation of the graded index includes photocrosslinking followed by UV curing accompanied with optical absorption increase. We also developed the prototype of a novel single-arm double-mode interferometric sensor based on our waveguides. It demonstrates high sensitivity to the chance of ambient temperature. The device can find possible applications in aeropropulsion control systems.

  10. Remote plasma processing of thin film materials

    NASA Astrophysics Data System (ADS)

    Kastenmeier, Bernd E. E.

    1999-09-01

    In this thesis, phenomena and mechanisms of remote plasma processes are investigated. The plasmas are spatially separated from the sample surface. Chemically reactive species are produced in the discharge region from rather inert feed gases. They exit the discharge region and travel in the afterglow towards the reaction chamber, where primarily neutral species arrive. The interaction with the sample surface is purely chemical. The absence of direct plasma surface interactions distinguishes remote plasma Chemical Dry Etching (CDE) from other etch processes like Reactive Ion Etching (RIE) or Inductively Coupled Plasma (ICP) etching. The etch reactions in CDE are isotropic, potentially offer great etch rate ratios and minimize substrate damage due to the absence of direct plasma-surface interactions. However, some materials like silicon dioxide (SiO2) or fluorocarbon deposits are difficult to remove because of the lack of activation energy otherwise provided by ion bombardment. In CDE, rates can be enhanced by the introduction of a new reaction pathway. Remote plasma CDE of silicon nitride (Si3N4) is an example for increasing the overall reaction rate by introducing a new reaction channel. Typically, the Si3N4 surface is exposed to the fluorine rich afterglow of a fluorocarbon, nitrogen trifluoride (NF 3) or sulfur hexafluoride (SF6) based discharge. We find that the Si3N4 etch rate is dramatically enhanced when Nitric Oxide (NO) is present in the afterglow as compared to the case in which only fluorine is present. Presented here are detailed analyses of the etching of Si3N 4 and SiO2 in different chemistries. Several experimental techniques are employed to investigate the composition of the plasma and the afterglow, the surface modifications and the etch rates for tetrafluoromethane (CF4) and NF3 based processes. These measurements establish the effect of NO on the Si3N4 etch rate. The dominant mechanism for the etch rate enhancement is shown by mass spectrometry

  11. Electrical and optical properties of copper and nickel molecular materials with tetrabenzo [b,f,j,n] [1,5,9,13] tetraazacyclohexadecine thin films grown by the vacuum thermal evaporation technique.

    PubMed

    Rodriguez, A; Sánchez-Vergara, M E; García-Montalvo, V; Ortiz-Rebollo, A; Alvarez-Bada, J R; Alvarez-Toledano, C

    2010-01-01

    Semiconducting molecular-material thin-films of tetrabenzo (b,f,j,n) [1,5,9,13] tetraazacyclohexadecine copper(II) and nickel(II) bisanthraflavates have been prepared by using vacuum thermal evaporation on Corning glass substrates and crystalline silicon wafers. The films thus obtained were characterized by infrared spectroscopy (FTIR), atomic force microscopy (AFM), ultraviolet-visible (UV-vis) spectroscopy and ellipsometry. IR spectroscopy showed that the molecular-material thin-films exhibit the same intra-molecular bonds as the original compounds, which suggests that the thermal evaporation process does not significantly alter their bonds. The optical band-gap values calculated from the absorption coefficient may be related to non-direct electronic interband transitions. The effect of temperature on conductivity was also measured in these samples. It was found that the temperature-dependent electric current is always higher for the nickel-based material and suggests a semiconductor-like behavior with conductivities in the order of 10(-8)Omega(-1)cm(-1).

  12. Designing thin film materials — Ternary borides from first principles

    PubMed Central

    Euchner, H.; Mayrhofer, P.H.

    2015-01-01

    Exploiting the mechanisms responsible for the exceptional properties of aluminum based nitride coatings, we apply ab initio calculations to develop a recipe for designing functional thin film materials based on ternary diborides. The combination of binary diborides, preferring different structure types, results in supersaturated metastable ternary systems with potential for phase transformation induced effects. For the exemplary cases of MxW1 − xB2 (with M = Al, Ti, V) we show by detailed ab initio calculations that the respective ternary solid solutions are likely to be experimentally accessible by modern depositions techniques. PMID:26082562

  13. Thin film electrochromic materials for energy efficient windows

    NASA Astrophysics Data System (ADS)

    Lampert, C. M.

    1980-10-01

    By use of electrochromic thin films, it is possible electronically to control transmission or reflection properties of a window, thus allowing it to be optically and thermally managed, thereby reducing space heating and cooling load. The properties of transition metal oxides, such as WO3, MoO3, Ir2O3, and V2O5 are detailed. Organic systems such as Heptyl Viologen, Polytungsten anion are reviewed. Also, intercalated structures are discussed. The designs of working devices are outlined. From this quantification, materials, devices, and appropriate deposition technology are selected for window applications.

  14. The Constitutive Modeling of Thin Films with Randon Material Wrinkles

    NASA Technical Reports Server (NTRS)

    Murphey, Thomas W.; Mikulas, Martin M.

    2001-01-01

    Material wrinkles drastically alter the structural constitutive properties of thin films. Normally linear elastic materials, when wrinkled, become highly nonlinear and initially inelastic. Stiffness' reduced by 99% and negative Poisson's ratios are typically observed. This paper presents an effective continuum constitutive model for the elastic effects of material wrinkles in thin films. The model considers general two-dimensional stress and strain states (simultaneous bi-axial and shear stress/strain) and neglects out of plane bending. The constitutive model is derived from a traditional mechanics analysis of an idealized physical model of random material wrinkles. Model parameters are the directly measurable wrinkle characteristics of amplitude and wavelength. For these reasons, the equations are mechanistic and deterministic. The model is compared with bi-axial tensile test data for wrinkled Kaptong(Registered Trademark) HN and is shown to deterministically predict strain as a function of stress with an average RMS error of 22%. On average, fitting the model to test data yields an RMS error of 1.2%

  15. Molecular dynamics simulation of friction of hydrocarbon thin films

    SciTech Connect

    Tamura, Hiroyuki; Yoshida, Muneo; Kusakabe, Kenichi

    1999-10-26

    Molecular Dynamics (MD) simulations were performed to investigate the dynamic behavior of hydrocarbon molecules under shear conditions. Frictional properties of cyclohexane, n-hexane, and iso-hexane thin films confirmed between two solid surfaces were calculated. Because the affinity of the solid surfaces in these simulations is strong, slippages occurred at inner parts of the confined films, whereas no slippages were observed at the solid boundaries. The hexagonal closest packing structure was observed for the adsorbed cyclohexane molecular layers. The branched methyl groups in the iso-hexane molecules increase the shear stress between the molecular layers. For the n-hexane monolayer, molecules were observed to roll during the sliding simulations. Rolling of the n-hexane molecules decreased the shear stress.

  16. Thin film resistive materials: past, present and future

    NASA Astrophysics Data System (ADS)

    Cherian Lukose, C.; Zoppi, G.; Birkett, M.

    2016-01-01

    This paper explores the key developments in thin film resistive materials for use in the fabrication of discrete precision resistors. Firstly an introduction to the preparation of thin films and their fundamental properties is given with respect to well established systems such as NiCr, TaN and CrSiO. The effect of doping these systems in both solid and gaseous forms to further refine their structural and electrical properties is then discussed before the performance of more recent materials systems such as CuAlMo and MmAgCuN are reviewed. In addition to performance of the materials themselves, the effect of varying processing parameters such as deposition pressure and temperature and subsequent annealing environment, as well as laser trimming energy and geometry are also studied. It is shown how these parameters can be systematically controlled to produce films of the required properties for varying applications such as high precision, long term stability and high power pulse performance.

  17. Thin-film ferroelectric materials and their applications

    NASA Astrophysics Data System (ADS)

    Martin, Lane W.; Rappe, Andrew M.

    2016-11-01

    Ferroelectric materials, because of their robust spontaneous electrical polarization, are widely used in various applications. Recent advances in modelling, synthesis and characterization techniques are spurring unprecedented advances in the study of these materials. In this Review, we focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways. We explore how the study of ferroelectric materials has expanded our understanding of fundamental effects, enabled the discovery of novel phases and physics, and allowed unprecedented control of materials properties. We discuss several exciting possibilities for the development of new devices, including those in electronic, thermal and photovoltaic applications, and transduction sensors and actuators. We conclude with a brief survey of the different directions that the field may expand to over the coming years.

  18. Using Thin Films to Screen Possible Scintillator Materials

    SciTech Connect

    Milbrath, Brian D.; Caggiano, Joseph A.; Engelhard, Mark H.; Joly, Alan G.; Matson, Dean W.; Nachimuthu, Ponnusamy; Olsen, Larry C.

    2009-06-30

    The discovery and optimization of new scintillators has traditionally been a rather slow process due to the difficulties of single crystal growth. This paper discusses the production of polycrystalline scintillator thin films (a few microns thick) which were tested in order to determine what characterizations could be made concerning a material’s ultimate potential as a scintillator prior to pursuing crystal growth. Thin films of CaF2(Eu), CeF3, and CeCl3, all known scintillators, were produced by vapor deposition. The hygroscopic CeCl3 was coated with multiple polymer-aluminum oxide bi-layers. Emission spectra peak wavelengths and decay times agreed with single crystal values. The films were too thin to measure gamma photopeaks, but using alpha energy deposition peaks, one could compare the relative photon yield/MeV between materials. The values obtained appear to give a relevant indication of a material’s light yield potential. The technique also appears useful for quickly determining the proper dopant amount for a given material.

  19. Chemically Deposited Thin-Film Solar Cell Materials

    NASA Technical Reports Server (NTRS)

    Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

    2005-01-01

    We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

  20. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1997-03-01

    Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

  1. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  2. Novel wide band gap materials for highly efficient thin film tandem solar cells. Final report

    SciTech Connect

    Brian E. Hardin; Connor, Stephen T.; Peters, Craig H.

    2012-06-11

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949 mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV's goal in Phase I of the DOE SBIR was to (1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and (2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin

  3. HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy.

    PubMed

    Yue, Ruoyu; Barton, Adam T; Zhu, Hui; Azcatl, Angelica; Pena, Luis F; Wang, Jian; Peng, Xin; Lu, Ning; Cheng, Lanxia; Addou, Rafik; McDonnell, Stephen; Colombo, Luigi; Hsu, Julia W P; Kim, Jiyoung; Kim, Moon J; Wallace, Robert M; Hinkle, Christopher L

    2015-01-27

    In this work, we demonstrate the growth of HfSe2 thin films using molecular beam epitaxy. The relaxed growth criteria have allowed us to demonstrate layered, crystalline growth without misfit dislocations on other 2D substrates such as highly ordered pyrolytic graphite and MoS2. The HfSe2 thin films exhibit an atomically sharp interface with the substrates used, followed by flat, 2D layers with octahedral (1T) coordination. The resulting HfSe2 is slightly n-type with an indirect band gap of ∼ 1.1 eV and a measured energy band alignment significantly different from recent DFT calculations. These results demonstrate the feasibility and significant potential of fabricating 2D material based heterostructures with tunable band alignments for a variety of nanoelectronic and optoelectronic applications.

  4. Nonlinear Optical Properties of Organic and Polymeric Thin Film Materials of Potential for Microgravity Processing Studies

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Paley, Mark S.; Penn, Benjamin; Witherow, William K.; Bank, Curtis; Shields, Angela; Hicks, Rosline; Ashley, Paul R.

    1996-01-01

    In this paper, we will take a closer look at the state of the art of polydiacetylene, and metal-free phthalocyanine films, in view of the microgravity impact on their optical properties, their nonlinear optical properties and their potential advantages for integrated optics. These materials have many attractive features with regard to their use in integrated optical circuits and optical switching. Thin films of these materials processed in microgravity environment show enhanced optical quality and better molecular alignment than those processed in unit gravity. Our studies of these materials indicate that microgravity can play a major role in integrated optics technology. Polydiacetylene films are produced by UV irradiation of monomer solution through an optical window. This novel technique of forming polydiacetylene thin films has been modified for constructing sophisticated micro-structure integrated optical patterns using a pre-programmed UV-Laser beam. Wave guiding through these thin films by the prism coupler technique has been demonstrated. The third order nonlinear parameters of these films have been evaluated. Metal-free phthalocyanine films of good optical quality are processed in our laboratories by vapor deposition technique. Initial studies on these films indicate that they have excellent chemical, laser, and environmental stability. They have large nonlinear optical parameters and show intrinsic optical bistability. This bistability is essential for optical logic gates and optical switching applications. Waveguiding and device making investigations of these materials are underway.

  5. Epitaxial thin film deposition of magnetostrictive materials and its effect on magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    McClure, Adam Marc

    Magnetostriction means that the dimensions of a material depend on its magnetization. The primary goal of this dissertation was to understand the effect of magnetostriction on the magnetic anisotropy of single crystal magnetostrictive thin films, where the epitaxial pinning of the material to a substrate could inhibit its conversion to new dimensions. In order to address this goal, several Fe-based binary alloys were deposited onto various substrates by molecular beam epitaxy. The samples were characterized by an array of techniques including electron diffraction, Rutherford backscattering, vibrating sample magnetometry, ferromagnetic resonance, and x-ray absorption spectroscopies. The attempted growths of crystalline magnetostrictive thin films resulted in successful depositions of Fe1-xGax and Fe1-x Znx. Depositions onto MgO(001) substrates result in an in-plane cubic magnetic anisotropy, as expected from the cubic symmetry of the Fe-based thin films, and a strong out-of-plane uniaxial anisotropy that forces the magnetization to lie in the plane of the films. Depositions onto ZnSe/GaAs(001) substrates feature an additional in-plane uniaxial anisotropy. The magnitudes and signs of the in-plane anisotropies depend on the Ga content. Furthermore, the cubic anisotropy constant of Fe1-xGax samples deposited onto MgO substrates switches sign at a lower Ga concentration than is seen in bulk Fe1-xGax. The effect on the magnetic anisotropy of depositing a magnetostrictive material as an epitaxial thin film is influenced by the material's magnetostrictive properties and the substrate upon which it is deposited. In particular, pinning a magnetoelastic material to a substrate will modify its cubic anisotropy, and depositions on substrates compliant to an anisotropic strain relaxation may result in a strong in-plane uniaxial anisotropy.

  6. Thin film synthesis of novel electrode materials for solid-oxide fuel cells

    SciTech Connect

    Jankowski, A.F.; Morse, J.D.

    1997-12-01

    Electrode materials for solid-oxide fuel cells are developed using sputter deposition. A thin film anode is formed by co-deposition of nickel and yttria-stabilized zirconia. This approach is suitable for composition grading and the provision of a mixed-conducting interracial layer to the electrolyte layer. Similarly, synthesis of a thin film cathode proceeds by co-deposition of silver and yttria- stabilized zirconia. The sputter deposition of a thin film solid- oxide fuel cell is next demonstrated. The thin film fuel cell microstructure is examined using scanning electron microscopy whereas the cell performance is characterized through current-voltage measurement and corresponding impedance spectroscopy.

  7. Absorption of thin film materials at 10.6 microm.

    PubMed

    Gibbs, W E; Butterfield, A W

    1975-12-01

    Absorption indices at a wavelength of 10.6 mum for thin films of As(2)S(3), GeSe, BaF(2), ZnSe, and CdTe were measured by calorimetric techniques with a CO(2) laser. The values obtained, 4.6 x 10(-4), 1.4 x 10(-3), 2.8 x 10(-3), 2.8 x 10(-3), and 5.0 x 10(-3), respectively, were significantly greater than the corresponding values for the bulk materials. This difference was least for the vitreous films, As(2)S(3) and GeSe, which also had a lower absorption than the remaining polycrystalline films. Details are presented of the microstructure of the films as determined by scanning electron microscopy and k-ray diffraction.

  8. Fundamentals of polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1991-01-01

    This report presents the results of a one-year research program on polycrystalline thin-film solar cells. The research was conducted to better understand the limitations and potential of solar cells using CuInSe{sub 2} and CdTe by systematically investigating the fundamental relationships linking material processing, material properties, and device behavior. By selenizing Cu and In layers, we fabricated device-quality CuInSe{sub 2} thin films and demonstrated a CuInSe{sub 2} solar cell with 7% efficiency. We added Ga, to increase the band gap of CuInSe{sub 2} devices to increase the open-circuit voltage to 0.55 V. We fabricated and analyzed Cu(InGa)Se{sub 2}/CuInSe{sub 2} devices to demonstrate the potential for combining the benefits of higher V{sub oc} while retaining the current-generating capacity of CuInSe{sub 2}. We fabricated an innovative superstrate device design with more than 5% efficiency, as well as a bifacial spectral-response technique for determining the electron diffusion length and optical absorption coefficient of CuInSe{sub 2} in an operational cell. The diffusion length was found to be greater than 1 {mu}m. We qualitatively modeled the effect of reducing heat treatments in hydrogen and oxidizing treatments in air on the I-V behavior of CuInSe{sub 2} devices. We also investigated post-deposition heat treatments and chemical processing and used them to fabricate a 9.6%-efficient CdTe/CdS solar cell using physical vapor deposition.

  9. Using Organic Light-Emitting Electrochemical Thin-Film Devices to Teach Materials Science

    ERIC Educational Resources Information Center

    Sevian, Hannah; Muller, Sean; Rudmann, Hartmut; Rubner, Michael F.

    2004-01-01

    Materials science can be taught by applying organic light-emitting electrochemical thin-film devices and in this method students were allowed to make a light-emitting device by spin coating a thin film containing ruthenium (II) complex ions onto a glass slide. Through this laboratory method students are provided with the opportunity to learn about…

  10. Using Organic Light-Emitting Electrochemical Thin-Film Devices to Teach Materials Science

    ERIC Educational Resources Information Center

    Sevian, Hannah; Muller, Sean; Rudmann, Hartmut; Rubner, Michael F.

    2004-01-01

    Materials science can be taught by applying organic light-emitting electrochemical thin-film devices and in this method students were allowed to make a light-emitting device by spin coating a thin film containing ruthenium (II) complex ions onto a glass slide. Through this laboratory method students are provided with the opportunity to learn about…

  11. Thin Film Materials and Devices for Resistive Temperature Sensing Applications

    DTIC Science & Technology

    2015-05-21

    beam ion sources, laser ion sources and vacuum arc ion sources. Broadly speaking, there are two types of ion sources commercially used in thin film...microbolometers. Thin films of VOx were deposited by Biased Target Ion Beam Deposition (BTIBD) (~85 nm thick). Electrical characterization of lateral resistor...deposited by Biased Target Ion Beam Deposition (BTIBD) (~85 nm thick). Electrical characterization of lateral resistor structures showed resistivity

  12. FMR study of thin film FeGe skyrmionic material

    NASA Astrophysics Data System (ADS)

    Bhallamudi, Vidya P.; Page, Michael R.; Gallagher, James; Purser, Carola; Schulze, Joseph; Yang, Fengyuan; Hammel, P. Chris

    Magnetic Skyrmions have attracted intense interest due to their novel topological properties and the potential for energy efficient computing. Magnetic dynamics play an important part in enabling some of these functionalities. Understanding these dynamics can shed light on the interplay of the various magnetic interactions that exist in these materials and lead to a rich magnetic phase diagram, including the Skyrmion phase. We have grown phase-pure FeGe epitaxial films on Si (111) and studied them using ferromagnetic resonance (FMR). FeGe has one of the highest recorded skyrmion transition temperatures, close to room temperature, and thin films are known to further stabilize the Skyrmion phase in the magnetic field-temperature space. We have performed cavity-based single frequency FMR from liquid nitrogen to room temperature on 120 nm thick films in both in-plane and out-of-plane geometries. The resulting complex spectra are consistent with those reported in literature for the bulk material and can be understood in terms of a conical model for the magnetism. Variable temperature broadband spectroscopy and measurements on thinner films, to better identify the various magnetic phases and their dynamic behavior, are ongoing and their progress will be discussed. Funding for this research was provided by the Center for Emergent Materials: an NSF MRSEC under Award Number DMR-1420451.

  13. Defect-Controlled Preparation of UiO-66 Metal-Organic Framework Thin Films with Molecular Sieving Capability.

    PubMed

    Zhang, Caiqin; Zhao, Yajing; Li, Yali; Zhang, Xuetong; Chi, Lifeng; Lu, Guang

    2016-01-01

    Metal-organic framework (MOF) UiO-66 thin films are solvothermally grown on conducting substrates. The as-synthesized MOF thin films are subsequently dried by a supercritical process or treated with polydimethylsiloxane (PDMS). The obtained UiO-66 thin films show excellent molecular sieving capability as confirmed by the electrochemical studies for redox-active species with different sizes.

  14. Stabilizing new bismuth compounds in thin film form [Stabilizing new thin film materials in bismuth compounds

    DOE PAGES

    Chen, Aiping; Zhou, Honghui; Zhu, Yuanyuan; ...

    2016-11-10

    Growth of unexpected phases from a composite target of BiFeO3:BiMnO3 and/or BiFeO3:BiCrO3 has been explored using pulsed laser deposition. The Bi2FeMnO6 tetragonal phase can be grown directly on SrTiO3 (STO) substrate, while two phases (S1 and S2) were found to grow on LaAlO3 (LAO) substrates with narrow growth windows. However, introducing a thin CeO2 buffer layer effectively broadens the growth window for the pure S1 phase, regardless of the substrate. Moreover, we discovered two new phases (X1 and X2) when growing on STO substrates using a BiFeO3:BiCrO3 target. Pure X2 phase can be obtained on CeO2-buffered STO and LAO substrates.more » This work demonstrates that some unexpected phases can be stabilized in a thin film form by using composite perovskite BiRO3 (R = Cr, Mn, Fe, Co, Ni) targets. Moreover, it also indicates that CeO2 can serve as a general template for the growth of bismuth compounds with potential room-temperature multiferroicity.« less

  15. Stabilizing new bismuth compounds in thin film form [Stabilizing new thin film materials in bismuth compounds

    SciTech Connect

    Chen, Aiping; Zhou, Honghui; Zhu, Yuanyuan; Li, Leigang; Zhang, Wenrui; Narayan, Jagdish; Wang, Haiyan; Jia, Quanxi

    2016-11-10

    Growth of unexpected phases from a composite target of BiFeO3:BiMnO3 and/or BiFeO3:BiCrO3 has been explored using pulsed laser deposition. The Bi2FeMnO6 tetragonal phase can be grown directly on SrTiO3 (STO) substrate, while two phases (S1 and S2) were found to grow on LaAlO3 (LAO) substrates with narrow growth windows. However, introducing a thin CeO2 buffer layer effectively broadens the growth window for the pure S1 phase, regardless of the substrate. Moreover, we discovered two new phases (X1 and X2) when growing on STO substrates using a BiFeO3:BiCrO3 target. Pure X2 phase can be obtained on CeO2-buffered STO and LAO substrates. This work demonstrates that some unexpected phases can be stabilized in a thin film form by using composite perovskite BiRO3 (R = Cr, Mn, Fe, Co, Ni) targets. Moreover, it also indicates that CeO2 can serve as a general template for the growth of bismuth compounds with potential room-temperature multiferroicity.

  16. Materials genomics of thin film strain relaxation by misfit dislocations

    NASA Astrophysics Data System (ADS)

    Hull, R.; Parvaneh, H.; Andersen, D.; Bean, John C.

    2015-12-01

    We summarize the development and implementation of a "process simulator" for modeling thin film strain relaxation by injection of misfit dislocations. The process simulator, initially developed for GexSi1-x/Si(100) lattice-mismatched epitaxy, integrates elasticity and dislocation theory with experimental measurements of kinetic parameters describing dislocation nucleation, propagation, and interactions. This enables predictive simulation of the development of misfit dislocation arrays during growth and thermal annealing sequences. Further, in the spirit of the materials genome initiative, we show how once a relatively complete description is built for one materials system, extension to a related system may be implemented using a greatly reduced data set. We illustrate this concept by translation of the simulator for GexSi1-x/Si(100) epitaxy into predictive simulation for the GexSi1-x/Si(110) system (which has quite different dislocation microstructure and kinetics) using greatly reduced data sets for the latter system and incorporating data refinement methods to extract unknown kinetic parameters. This sets the platform for extension of these methods to a broader set of strained layer systems.

  17. Effect of Top Electrode Material on Radiation-Induced Degradation of Ferroelectric Thin Films

    DTIC Science & Technology

    2016-03-31

    Effect of Top Electrode Material on Radiation-Induced Degradation of Ferroelectric Thin Films Steven J. Brewer1, Carmen Z. Deng2, Connor P...Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA 2School of Materials Science and Engineering... material . These results suggest promising avenues to radiation-hard devices and material stacks. Introduction Ferroelectric thin films enable numerous

  18. Development of thin film thermocouples on ceramic materials for advanced propulsion system applications

    NASA Technical Reports Server (NTRS)

    Holanda, Raymond

    1993-01-01

    Thin film thermocouples were developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose is to develop thin film thermocouples for use on ceramic materials. The new thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials tested are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high heating rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hr or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

  19. Development of Thin Film Thermocouples on Ceramic Materials for Advanced Propulsion System Applications

    NASA Technical Reports Server (NTRS)

    Holanda, R.

    1992-01-01

    Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 c. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The new thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials tested are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high heating rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperature of 1500 C depending on the stability of the particular ceramic substrate.

  20. Organic and inorganic–organic thin film structures by molecular layer deposition: A review

    PubMed Central

    Sundberg, Pia

    2014-01-01

    Summary The possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic–organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications. PMID:25161845

  1. ZnO Thin Films Deposited on Textile Material Substrates for Biomedical Applications

    NASA Astrophysics Data System (ADS)

    Duta, L.; Popescu, A. C.; Dorcioman, G.; Mihailescu, I. N.; Stan, G. E.; Zgura, I.; Enculescu, I.; Dumitrescu, I.

    We report on the coating with ZnO adherent thin films of cotton woven fabrics by Pulsed laser deposition technique in order to obtain innovative textile materials, presenting protective effects against UV radiations and antifungal action.

  2. Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials

    DOEpatents

    Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

    2014-02-04

    Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

  3. Pulsed Laser Deposition of Thin Film Material for Nonlinear Waveguides.

    DTIC Science & Technology

    1994-10-09

    addition, a method was devised to enhance the thickness uniformity or PLU-fabricated thin films, which is notoriously poor. This method uses a comic ...optic or novel design in order to produce concentric annular sources at the target being ablated. In principle, uniform coverage within rew percent is achievable for substrate sizes or a few inches, using current technology. (MM)

  4. Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Keen, B.; Makin, R.; Stampe, P. A.; Kennedy, R. J.; Sallis, S.; Piper, L. J.; McCombe, B.; Durbin, S. M.

    2014-04-01

    The alloying of bismuth with III-V semiconductors, in particular GaAs and InAs thin films grown by molecular beam epitaxy (MBE), has attracted considerable interest due to the accompanying changes in band structure and lattice constant. Specifically, bismuth incorporation in these compounds results in both a reduction in band gap (through shifting of the valence band) and an increase in the lattice constant of the alloy. To fully understand the composition of these alloys, a better understanding of the binary endpoints is needed. At present, a limited amount of literature exists on the III-Bi family of materials, most of which is theoretical work based on density functional theory calculations. The only III-Bi material known to exist (in bulk crystal form) is InBi, but its electrical properties have not been sufficiently studied and, to date, the material has not been fabricated as a thin film. We have successfully deposited crystalline InBi on (100) GaAs substrates using MBE. Wetting of the substrate is poor, and regions of varying composition exist across the substrate. To obtain InBi, the growth temperature had to be below 100 °C. It was found that film crystallinity improved with reduced Bi flux, into an In-rich regime. Additionally, attempts were made to grow AlBi and GaBi.

  5. Antireflection effects at nanostructured material interfaces and the suppression of thin-film interference.

    PubMed

    Yang, Qiaoyin; Zhang, Xu A; Bagal, Abhijeet; Guo, Wei; Chang, Chih-Hao

    2013-06-14

    Thin-film interference is a well-known effect, and it is commonly observed in the colored appearance of many natural phenomena. Caused by the interference of light reflected from the interfaces of thin material layers, such interference effects can lead to wavelength and angle-selective behavior in thin-film devices. In this work, we describe the use of interfacial nanostructures to eliminate interference effects in thin films. Using the same principle inspired by moth-eye structures, this approach creates an effective medium where the index is gradually varying between the neighboring materials. We present the fabrication process for such nanostructures at a polymer-silicon interface, and experimentally demonstrate its effectiveness in suppressing thin-film interference. The principle demonstrated in this work can lead to enhanced efficiency and reduce wavelength/angle sensitivity in multilayer optoelectronic devices.

  6. Fe3O4 thin films: controlling and manipulating an elusive quantum material

    NASA Astrophysics Data System (ADS)

    Liu, Xionghua; Chang, Chun-Fu; Rata, Aurora Diana; Komarek, Alexander Christoph; Tjeng, Liu Hao

    2016-12-01

    Fe3O4 (magnetite) is one of the most elusive quantum materials and at the same time one of the most studied transition metal oxide materials for thin-film applications. The theoretically expected half-metallic behaviour generates high expectations that it can be used in spintronic devices. Yet, despite the tremendous amount of work devoted to preparing thin films, the enigmatic first-order metal-insulator transition, and the hallmark of magnetite known as the Verwey transition, is in thin films extremely broad and occurs at substantially lower temperatures as compared with that in high-quality bulk single crystals. Here we have succeeded in finding and making a particular class of substrates that allows the growth of magnetite thin films with the Verwey transition as sharp as in the bulk. Moreover, we are now able to tune the transition temperature and, using tensile strain, increase it to substantially higher values than in the bulk.

  7. Ultrafast Polarization Switching in a Biaxial Molecular Ferroelectric Thin Film: [Hdabco]ClO4.

    PubMed

    Tang, Yuan-Yuan; Zhang, Wan-Ying; Li, Peng-Fei; Ye, Heng-Yun; You, Yu-Meng; Xiong, Ren-Gen

    2016-12-07

    Molecular ferroelectrics are attracting much attention as valuable complements to conventional ceramic ferroelectrics owing to their solution processability and nontoxicity. Encouragingly, the recent discovery of a multiaxial molecular ferroelectric, tetraethylammonium perchlorate, is expected to be able to solve the problem that in the technologically relevant thin-film form uniaxial molecular ferroelectrics have been found to perform considerably more poorly than in bulk. However, it can show good polarization-electric field (P-E) hysteresis loops only at very low frequency, severely hampering practical applications such as ferroelectric random access memory. Here, we present a biaxial molecular ferroelectric thin film of [Hdabco]ClO4 (dabco = 1,4-diazabicyclo[2.2.2]octane) (1), where a perfect ferroelectric hysteresis loop can be observed even at 10 kHz. It is the first example of a molecular ferroelectric thin film whose polarization can be switched at such a high frequency. Moreover, using piezoresponse force microscopy, we clearly observed the coexistence of 180° and non-180° ferroelectric domains and provided direct experimental proof that 180° ferroelectric switching and non-180° ferroelastic switching are both realized; that is, a flexible alteration of the polarization axis direction can occur in the thin film by applying an electric field. These results open a new avenue for applications of molecular ferroelectrics and will inspire further exploration of high-performance multiaxial molecular ferroelectric thin films.

  8. Mesoporous thin films of ``molecular squares'' as sensors for volatile organic compounds

    SciTech Connect

    Keefe, M.H.; Slone, R.V.; Hupp, J.T.; Czaplewski, K.F.; Snurr, R.Q.; Stern, C.L.

    2000-04-18

    Mesoporous thin films of rhenium-based molecular squares, [Re(CO){sub 3}Cl(L)]{sub 4} (L = pyrazine, 4,4{prime}-bipyridine), have been utilized as sensors for volatile organic compounds (VOCs). The sensing was conducted using a quartz crystal microbalance with the target compounds present in the gas phase at concentrations ranging from 0.05 to 1 mM. Quartz crystal microbalance studies with these materials allowed for distinction between the following VOCs: (1) small aromatic versus aliphatic molecules of almost identical size and volatility and (2) an array of benzene molecules derivatized with electron donating/withdrawing substituents. The experiments suggest that the mesoporous host materials interact with VOC guest molecules through both van der Waals and weak charge-transfer interactions. In addition, size selectivity is shown by exposure of the molecular squares to cyclic ethers of differing size.

  9. Multiferroic fluoride BaCoF4 Thin Films Grown Via Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Borisov, Pavel; Johnson, Trent; García-Castro, Camilo; Kc, Amit; Schrecongost, Dustin; Cen, Cheng; Romero, Aldo; Lederman, David

    Multiferroic materials exhibit exciting physics related to the simultaneous presence of multiple long-range orders, in many cases consisting of antiferromagnetic (AF) and ferroelectric (FE) orderings. In order to provide a new, promising route for fluoride-based multiferroic material engineering, we grew multiferroic fluoride BaCoF4 in thin film form on Al2O3 (0001) substrates by molecular beam epitaxy. The films grow with the orthorhombic b-axis out-of-plane and with three in-plane structural twin domains along the polar c-axis directions. The FE ordering in thin films was verified by FE remanent hysteresis loops measurements at T = 14 K and by room temperature piezoresponse force microscopy (PFM). An AF behavior was found below Neel temperature TN ~ 80 K, which is in agreement with the bulk properties. At lower temperatures two additional magnetic phase transitions at 19 K and 41 K were found. First-principles calculations demonstrated that the growth strain applied to the bulk BaCoF4 indeed favors two canted spin orders, along the b- and a-axes, respectively, in addition to the main AF spin order along the c-axis. Supported by FAME (Contract 2013-MA-2382), WV Research Challenge Grant (HEPC.dsr.12.29), and DMREF-NSF 1434897.

  10. Scanning Tunneling Microscopy of Multilayer Thin Film Solar Cell Materials^*

    NASA Astrophysics Data System (ADS)

    Mantovani, J. G.; Friedfeld, R.; Raffaelle, R. P.

    1996-03-01

    We have been investigating electrochemically deposited multilayer structures based on the Cu_xIn_2-xSe2 system for use in thin film solar cells. The interest in multilayer structures is due to their proposed use in increasing thin film solar cell efficiency. We have imaged the artificially imposed superstructure of our nanoscale multilayers using a scanning tunneling microscope. A comparison is made between the theoretically calculated modulation wavelengths and those generated by Fourier analysis of the scanning tunneling microscope images. A discussion of the use of photo-assisted tunneling spectroscopy in a modified STM is presented. * This work was supported by the Southeastern University Research Association in collaboration with Oak Ridge National Laboratory and the Florida Solar Energy Center.

  11. Enhanced Rates of Photoinduced Molecular Orientation in a Series of Molecular Glassy Thin Films.

    PubMed

    Snell, Kristen E; Hou, Renjie; Ishow, Eléna; Lagugné-Labarthet, François

    2015-07-07

    Photoinduced orientation in a series of molecular glasses made of small push-pull azo derivatives is dynamically investigated for the first time. Birefringence measurements at 632.8 nm are conducted with a temporal resolution of 100 ms to probe the fast rate of the azo orientation induced under polarized light and its temporal stability over several consecutive cycles. To better evaluate the influence of the azo chemical substituents and their electronic properties on the orientation of the whole molecule, a series of push-pull azo derivatives involving a triphenylaminoazo core substituted with distinct electron-withdrawing moieties is studied. All resulting thin films are probed using polarization modulation infrared spectroscopy that yields dynamical linear dichroism measurements during a cycle of orientation followed by relaxation. We show here in particular that the orientation rates of small molecule-based azo materials are systematically increased up to 7-fold compared to those of a reference polymer counterpart. For specific compounds, the percentage of remnant orientation is also higher, which makes these materials of great interest and promising alternatives to azobenzene-containing polymers for a variety of applications requiring a fast response and absolute control over the molecular weight.

  12. Direct Photoalignment and Optical Patterning of Molecular Thin Films.

    PubMed

    Pithan, Linus; Beyer, Paul; Bogula, Laura; Zykov, Anton; Schäfer, Peter; Rawle, Jonathan; Nicklin, Chris; Opitz, Andreas; Kowarik, Stefan

    2017-02-01

    A novel strategy for direct photoalignment of molecular materials using optothermal re-orientation is introduced. Photoalignment for molecular materials such as the organic semiconductor tetracene is shown, without relying on additional photoreactive dopants or alignment layers. Patterning and polarized light emission, e.g., for polarized organic light emitting diodes is demonstrated.

  13. Atomic-scale analysis of plastic deformation in thin-film forms of electronic materials

    NASA Astrophysics Data System (ADS)

    Kolluri, Kedarnath

    Nanometer-scale-thick films of metals and semiconductor heterostructures are used increasingly in modern technologies, from microelectronics to various areas of nanofabrication. Processing of such ultrathin-film materials generates structural defects, including voids and cracks, and may induce structural transformations. Furthermore, the mechanical behavior of these small-volume structures is very different from that of bulk materials. Improvement of the reliability, functionality, and performance of nano-scale devices requires a fundamental understanding of the atomistic mechanisms that govern the thin-film response to mechanical loading in order to establish links between the films' structural evolution and their mechanical behavior. Toward this end, a significant part of this study is focused on the analysis of atomic-scale mechanisms of plastic deformation in freestanding, ultrathin films of face-centered cubic (fcc) copper (Cu) that are subjected to biaxial tensile strain. The analysis is based on large-scale molecular-dynamics simulations. Elementary mechanisms of dislocation nucleation are studied and several problems involving the structural evolution of the thin films due to the glide of and interactions between dislocations are addressed. These problems include void nucleation, martensitic transformation, and the role of stacking faults in facilitating dislocation depletion in ultrathin films and other small-volume structures of fcc metals. Void nucleation is analyzed as a mechanism of strain relaxation in Cu thin films. The glide of multiple dislocations causes shearing of atomic planes and leads to formation of surface pits, while vacancies are generated due to the glide motion of jogged dislocations. Coalescence of vacancy clusters with surface pits leads to formation of voids. In addition, the phase transformation of fcc Cu films to hexagonal-close packed (hcp) ones is studied. The resulting martensite phase nucleates at the film's free surface and

  14. The effects of external stimuli on molecular organization in organic thin films by infrared spectroscopy

    NASA Astrophysics Data System (ADS)

    Hietpas, Geoffrey David

    The study of organic thin films has been an active field of research for nearly 100 years. Two general types of organic thin film systems have received considerable attention. The first of these is the field of self-assembled monolayers (SAM's), where a reactive adsorbate is spontaneously organized at a substrate through ionic or covalent bonding. The second area is comprised of thin films of polymeric materials which may also be ordered and chemically attached like SAM's, but also includes disordered systems pinned by random attachment, and purely physisorbed films held by Van der Waals forces. The incentive for research on these systems has focused on potential improvements in applications such as biocompatable implants, lithographic masks or resists, chromatographic coatings, biosensors, and providing corrosion protection for the underlying substrate. For virtually any application, an organic thin film must remain stable such that its structure is either unaltered or reversibly changed in a manner that does not affect performance. In this thesis, the technique of infrared spectroscopy is applied to the study of thin film stability in response to external stimuli. Both polymer thin films (thickness < 0.5 mum) and SAM systems are studied, and chemical as well as mechanical methods of structural perturbation are explored. Taken together, the studies in this thesis demonstrate that organic thin films are fragile systems, often more susceptible to external perturbation than the bulk material. For any thin film system the substrate/film and film/air interfaces as well as the extremely small quantities of film material, all affect the adsorbate material in a manner not present to a significant extent in the bulk state. All of these variables are also potential sources of failure in the film. Therefore, any organic thin film system is sensitive to its immediate surroundings, and an externally applied chemical and mechanical stimuli may 'attack' this structure on several

  15. Vibrational modes and changing molecular conformation of perfluororubrene in thin films and solution.

    PubMed

    Anger, F; Scholz, R; Gerlach, A; Schreiber, F

    2015-06-14

    We investigate the vibrational properties of perfluororubrene (PF-RUB) in thin films on silicon wafers with a native oxide layer as well as on silicon wafers covered with a self-assembled monolayer and in dichloromethane solution. In comparison with computed Raman and IR spectra, we can assign the molecular modes and identify two molecular conformations with twisted and planar tetracene backbones of the molecule. Moreover, we employ Raman imaging techniques to study the morphology and distribution of the molecular conformation in PF-RUB thin films.

  16. Chalcogenide phase-change thin films used as grayscale photolithography materials.

    PubMed

    Wang, Rui; Wei, Jingsong; Fan, Yongtao

    2014-03-10

    Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

  17. Molecular precursors for solid state materials: Volatile anhydrous metal nitrates as single-source precursor molecules for the chemical vapor deposition of metal oxide thin films

    NASA Astrophysics Data System (ADS)

    Colombo, Daniel Gerard

    This thesis has focused on the use of volatile anhydrous metal nitrates as carbon- and hydrogen-free, single-source precursors for the CVD of metal oxide films. Chapter 3 discusses the low temperature CVD of crystalline TiO2 thin films using tetranitratitanium(IV), Ti(NO3)4. Ti(NO3)4 produces crystalline TiO2 films of the anatase phase in UHV-CVD at temperatures as low as 184°C. Fabricated TiO2 capacitors exhibited electrically equivalent SiO2 gate dielectric thicknesses and leakage current densities as low as 17 and 10-8 Amp·cm-2, respectively. Deposition kinetics suggested Ea = 67 kJ·mol-1 in the reaction-limited regime below 250°C. Chapter 4 describes the result that volatile anhydrous metal nitrates can be readily used to deposit metal oxide films. The precursors used included Zr(NO3)4, VO(NO3)3, Co(NO 3)4, [NO2][Ga(NO3)4], Sn(NO 3)4, CrO2(NO3)2, Hf(NO 3)4, In(NO3)3, Cu(NO3) 2, WO2(NO3)2 and MoO2(NO 3)2. Notably, zirconium(IV) nitrate, Zr(NO3) 4, was found to reproducibly deposit the high temperature cubic phase of ZrO2 on Si(100) at 400°C. The mechanism of precursor decomposition and how it leads to the stabilization of the cubic phase at low temperatures has not yet been determined. Chapter 5 describes the crystallography of nitronium tetranitratogallate(III), [NO2][Ga(NO3)4]. X-ray structure analysis of single crystals of [NO2][Ga(NO3)4] revealed that [NO2][Ga(NO3)4] undergoes a reversible, first-order phase transition from a room temperature polymorph indexed to a tetragonal cell (space group I4¯.) to a rotationally-twinned, low-temperature monoclinic polymorph (space group I2) without any apparent damage to the crystal at ˜250 K. In chapter 6, the effects of using a Lewis base to stabilize aluminum hydride complexes in low states of aggregation was probed. Several monomeric, donor-stabilized amidoalanes and a rare, dimeric, donor-stabilized imidoalane, [AlH(Quin)(mu-N-C6H3-2,6-(CH3)2)] 2 (Quin = quinuclidine), were synthesized and fully

  18. Anomalous scaling behavior and surface roughening in molecular thin-film deposition

    SciTech Connect

    Yim, S.; Jones, T. S.

    2006-04-15

    The thin film growth dynamics of a molecular semiconductor, free-base phthalocyanine (H{sub 2}Pc), deposited by organic molecular beam deposition, has been studied by atomic force microscopy (AFM) and height difference correlation function (HDCF) analysis. The measured dynamic scaling components ({alpha}{sub loc}=0.61{+-}0.12, {beta}=1.02{+-}0.08, and 1/z=0.72{+-}0.13) are consistent with rapid surface roughening and anomalous scaling behavior. A detailed analysis of AFM images and simple growth models suggest that this behavior arises from the pronounced upward growth of crystalline H{sub 2}Pc mounds during the initial stages of thin film growth.

  19. Modeling Ellipsometry Measurements of Molecular Thin-Film Contamination on Genesis Array Samples

    NASA Technical Reports Server (NTRS)

    Calaway, Michael J.; Stansbery, E. K.; McNamara, K. M.

    2006-01-01

    The discovery of a molecular thin-film contamination on Genesis flown array samples changed the course of preliminary assessment strategies. Analytical techniques developed to measure solar wind elemental abundances must now compensate for a thin-film contamination. Currently, this is done either by experimental cleaning before analyses or by depth-profiling techniques that bypass the surface contamination. Inside Johnson Space Center s Genesis dedicated ISO Class 4 (Class 10) cleanroom laboratory, the selection of collector array fragments allocated for solar wind analyses are based on the documentation of overall surface quality, visible surface particle contamination greater than 1 m, and the amount of thin film contamination measured by spectroscopic ellipsometry. Documenting the exact thickness, surface topography, and chemical composition of these contaminates is also critical for developing accurate cleaning methods. However, the first step in characterization of the molecular film is to develop accurate ellipsometry models that will determine an accurate thickness measurement of the contamination film.

  20. Evaporation system and method for gas jet deposition of thin film materials

    DOEpatents

    Schmitt, Jerome J.; Halpern, Bret L.

    1994-01-01

    A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

  1. Thin films of energetic materials by physical vapor deposition: TATB and LLM-105

    NASA Astrophysics Data System (ADS)

    Williamson, David; Gymer, Sue; O'Conner, Colum; Hazelwood, Adam; Jardine, Andrew

    2015-06-01

    Thin films of energetic materials enable a diverse range of characterization measurements: structure, surface energy and adhesion, and even reactivity. Here we present a method to grow thin films by a physical vapor deposition method (sublimation) using a dedicated instrument which can operate at ultra-high vacuum. The approach enables fabrication of thin films of energetic materials that are otherwise difficult to process by traditional methods, for example because of their low solubility. The intention is to use this instrument as a platform for studying pure materials and co-deposited materials grown either as multi-layers or as co-crystals. Examples of TATB and LLM-105 film morphologies grown using this technique are presented.

  2. Thin films of energetic materials by physical vapor deposition: TATB and LLM-105

    NASA Astrophysics Data System (ADS)

    Williamson, D. M.; Gymer, S.; O'Connor, C.; Hazelwood, A.; Jardine, A. P.

    2017-01-01

    Thin films of energetic materials enable a diverse range of characterization measurements: structure, surface energy and adhesion, and even reactivity. Here we describe growth of thin films by a physical vapor deposition method (sublimation) using a dedicated instrument which can operate at ultra-high vacuum. The approach enables fabrication of thin films of energetic materials that are otherwise difficult to process by traditional methods, for example because of their low solubility. The intention is to use this instrument as a platform for studying pure materials and co-deposited materials grown either as multi-layers or as co-crystals. Examples of TATB and LLM-105 film morphologies grown using this technique are presented.

  3. Molecular Packing Structure of Mesogenic Octa-Hexyl Substituted Phthalocyanine Thin Film by X-ray Diffraction Analysis.

    PubMed

    Ohmori, Masashi; Higashi, Takuya; Fujii, Akihiko; Ozaki, Masanori

    2016-04-01

    The molecular packing structure in a thin film of the liquid crystalline phthalocyanine, 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2), which is a promising small-molecular material for solution-processable organic thin-film solar cells, has been investigated by X-ray diffraction (XRD) measurement. The crystal structure of C6PcH2 in the spin-coated film was determined to be a centered rectangular structure (a = 36.4 Å, b = 20.3 Å). The tilt angle of the phthalocyanine core normal vector was 34-39° from the column axis, and the shortest intermolecular distance was 3.9-4.0 A. The crystal structure determined by XRD analysis was ascertained to be consistent with that calculated by Fourier analvsis.

  4. Molecular orientation dependence of hole-injection barrier in pentacene thin film on the Au surface in organic thin film transistor

    NASA Astrophysics Data System (ADS)

    Ihm, Kyuwook; Kim, Bongsoo; Kang, Tai-Hee; Kim, Ki-Jeong; Joo, Min Ho; Kim, Tae Hyeong; Yoon, Sang Soo; Chung, Sukmin

    2006-07-01

    We have investigated the effects of a buffer layer insertion on the performance of the pentacene based thin film transistor with a bottom contact structure. When the pentacene molecules have a standing up coordination on the Au surface that is modified by the benzenethiol or methanethiol, the transition region in the pentacene thin film is removed along the boundary between the Au and silicon oxide region, and the hole-injection barrier decreases by 0.4eV. Pentacene on various surfaces showed that the highly occupied molecular level is 0.2-0.4eV lower in the standing up coordination than in the lying down coordination.

  5. Method of forming particulate materials for thin-film solar cells

    DOEpatents

    Eberspacher, Chris; Pauls, Karen Lea

    2004-11-23

    A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

  6. Sigma-pi molecular dielectric multilayers for low-voltage organic thin-film transistors.

    PubMed

    Yoon, Myung-Han; Facchetti, Antonio; Marks, Tobin J

    2005-03-29

    Very thin (2.3-5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor structures to achieve sub-1-V operating characteristics. These new dielectrics are fabricated by means of layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well defined, strongly adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (up to approximately 2,500 nF.cm(-2)), excellent insulating properties (leakage current densities as low as 10(-9) A.cm(-2)), and single-layer dielectric constant (k)of approximately 16. These 3D self-assembled multilayers enable organic thin-film transistor function at very low source-drain, gate, and threshold voltages (<1 V) and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.

  7. Excitation-dependent fluorescence from atomic/molecular layer deposited sodium-uracil thin films.

    PubMed

    Pale, Ville; Giedraityte, Zivile; Chen, Xi; Lopez-Acevedo, Olga; Tittonen, Ilkka; Karppinen, Maarit

    2017-08-01

    Atomic/molecular layer deposition (ALD/MLD) offers unique possibilities in the fabrication of inorganic-organic thin films with novel functionalities. Especially, incorporating nucleobases in the thin-film structures could open new avenues in the development of bio-electronic and photonic devices. Here we report an intense blue and widely excitation-dependent fluorescence in the visible region for ALD/MLD fabricated sodium-uracil thin films, where the crystalline network is formed from hydrogen-bonded uracil molecules linked via Na atoms. The excitation-dependent fluorescence is caused by the red-edge excitation shift (REES) effect taking place in the red-edge of the absorption spectrum, where the spectral relaxation occurs in continuous manner as demonstrated by the time-resolved measurements.

  8. Rupture mechanism of liquid crystal thin films realized by large-scale molecular simulations

    NASA Astrophysics Data System (ADS)

    Nguyen, Trung Dac; Carrillo, Jan-Michael Y.; Matheson, Michael A.; Brown, W. Michael

    2014-02-01

    The ability of liquid crystal (LC) molecules to respond to changes in their environment makes them an interesting candidate for thin film applications, particularly in bio-sensing, bio-mimicking devices, and optics. Yet the understanding of the (in)stability of this family of thin films has been limited by the inherent challenges encountered by experiment and continuum models. Using unprecedented large-scale molecular dynamics (MD) simulations, we address the rupture origin of LC thin films wetting a solid substrate at length scales similar to those in experiment. Our simulations show the key signatures of spinodal instability in isotropic and nematic films on top of thermal nucleation, and importantly, for the first time, evidence of a common rupture mechanism independent of initial thickness and LC orientational ordering. We further demonstrate that the primary driving force for rupture is closely related to the tendency of the LC mesogens to recover their local environment in the bulk state. Our study not only provides new insights into the rupture mechanism of liquid crystal films, but also sets the stage for future investigations of thin film systems using peta-scale molecular dynamics simulations.The ability of liquid crystal (LC) molecules to respond to changes in their environment makes them an interesting candidate for thin film applications, particularly in bio-sensing, bio-mimicking devices, and optics. Yet the understanding of the (in)stability of this family of thin films has been limited by the inherent challenges encountered by experiment and continuum models. Using unprecedented large-scale molecular dynamics (MD) simulations, we address the rupture origin of LC thin films wetting a solid substrate at length scales similar to those in experiment. Our simulations show the key signatures of spinodal instability in isotropic and nematic films on top of thermal nucleation, and importantly, for the first time, evidence of a common rupture mechanism

  9. Optical fiber magnetic field sensors with TbDyFe magnetostrictive thin films as sensing materials.

    PubMed

    Yang, Minghong; Dai, Jixiang; Zhou, Ciming; Jiang, Desheng

    2009-11-09

    Different from usually-used bulk magnetostrictive materials, magnetostrictive TbDyFe thin films were firstly proposed as sensing materials for fiber-optic magnetic field sensing characterization. By magnetron sputtering process, TbDyFe thin films were deposited on etched side circle of a fiber Bragg Grating (FBG) as sensing element. There exists more than 45pm change of FBG wavelength when magnet field increase up to 50 mT. The response to magnetic field is reversible, and could be applicable for magnetic and current sensing.

  10. Low-temperature Amorphous and Nanocrystalline Silicon Materials and Thin-film Transistors

    NASA Astrophysics Data System (ADS)

    Sazonov, Andrei; Striakhilev, Denis; Nathan, Arokia

    Low-temperature processing and characterization of amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si) materials and devices are reviewed. An overview of silicon-based low-temperature thin-film dielectrics is given in the context of thin-film transistor (TFT) device operation. The low-temperature growth and synthesis of these materials are also presented and compared to conventionally fabricated high-temperature processed devices. The effect of using nc-Si contacts on a-Si:H TFTs and the stability of nc-Si TFTs is reviewed.

  11. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    PubMed

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  12. Theoretical and material studies of thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.

    1989-01-01

    Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

  13. Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films.

    PubMed

    Peumans, Peter; Uchida, Soichi; Forrest, Stephen R

    2003-09-11

    The power conversion efficiency of small-molecular-weight and polymer organic photovoltaic cells has increased steadily over the past decade. This progress is chiefly attributable to the introduction of the donor-acceptor heterojunction that functions as a dissociation site for the strongly bound photogenerated excitons. Further progress was realized in polymer devices through use of blends of the donor and acceptor materials: phase separation during spin-coating leads to a bulk heterojunction that removes the exciton diffusion bottleneck by creating an interpenetrating network of the donor and acceptor materials. The realization of bulk heterojunctions using mixtures of vacuum-deposited small-molecular-weight materials has, on the other hand, posed elusive: phase separation induced by elevating the substrate temperature inevitably leads to a significant roughening of the film surface and to short-circuited devices. Here, we demonstrate that the use of a metal cap to confine the organic materials during annealing prevents the formation of a rough surface morphology while allowing for the formation of an interpenetrating donor-acceptor network. This method results in a power conversion efficiency 50 per cent higher than the best values reported for comparable bilayer devices, suggesting that this strained annealing process could allow for the formation of low-cost and high-efficiency thin film organic solar cells based on vacuum-deposited small-molecular-weight organic materials.

  14. OUT Success Stories: Thin-Film PV: Leadership in Materials R and D

    SciTech Connect

    Pitchford, P.

    2000-08-31

    Photovoltaics (PV) is a modern energy technology that makes use of semiconductor materials to convert sunlight directly to electricity. The idea of thin film technology is to produce truly low-cost PV devices by using pennies worth of active semiconductor materials.

  15. Chemistry of silicon-containing compounds and molecular approaches to materials for silicon-based microelectronics. Preparation of metal silyl complexes, studies of reactions between alkylidenes and silanes, and deposition of titanium oxide thin films

    NASA Astrophysics Data System (ADS)

    Blanton, Jaime Renee

    This dissertation describes studies of the chemistry of silicon-containing compounds and molecular approaches to silicon-based microelectronic materials. The preparation of new silyl dianions and transition metal silyl complexes, studies of the mechanism of reactions between alkylidenes and silanes, and fabrication of TiO2 thin films on Si as microelectronic gate materials are presented. Chapter 1 provides a brief overview of the field of early transition metal silyl chemistry, experimental techniques used in the research, and a summary of research conducted in each subsequent chapter. Chapter 2 describes the synthesis and characterization of new silyl dianions of the type [K(18-crown-6)] 2[(Me3Si)2Si-(CH2)n-Si(SiMe 3)2] (n = 1, 4; 2, 5; 3, 6). These represent some of the few known disilyl dianions. Crystal structures of the starting materials to 5 and 6, (Me3Si)3Si-(CH2)n-Si(SiMe 3)3, (n = 2, 2; 3, 3) were determined by X-ray diffraction studies. The preparation and characterization of novel Zr and Zn silyl complexes from the reactions of 5 with (Me 2N)3ZrCl and ZnCl2, respectively, are presented in Chapter 3. Both complexes are anionic with K(18-crown-6)+ counterions. {(Me2N)3Zr[eta2-(Me 3Si)2Si(CH2)2Si(SiMe3) 2]}- (7) consists of a five-coordinate Zr center. [K(18-crown-6)]2{[eta2-(Me3Si) 2Si(CH2)2Si(SiMe3)2]Zn 2[mu-(Me3Si)2Si(CH2)2-Si(SiMe 3)2]} (8) is the first trisilyl Zn complex. 8 is a dimer with each Zn metal center coordinated by a chelating and a bridging disilyl ligand. Chapter 4 presents new mechanistic insights into the reactions of a Ta alkylidene complex (Me3SiCH2) 3Ta(PMe3)[=CHSiMe3] (9) with H 2SiMePh. Such reactions yielded new silyl-substituted alkylidene complexes. Experiments conducted in the presence of 20-fold PMe3 were 19 times slower than those conducted with no added phosphine. Mass spectral analysis of the gaseous products from the reaction conducted in the presence of H 2 suggested hydrogen scrambling. Finally, Chapter 5 discusses the

  16. Magnetic properties of low-moment ferrimagnetic Heusler Cr 2 CoGa thin films grown by molecular beam epitaxy

    DOE PAGES

    Jamer, Michelle E.; Sterbinsky, George E.; Stephen, Gregory M.; ...

    2016-10-31

    Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure; however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with superconducting quantum interface device magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity component with an activation energy of 87 meV.more » These results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.« less

  17. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect

    Hu, W.; Peterson, R. L.

    2014-05-12

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  18. Design of camouflage material for visible and near infrared based on thin film technology

    NASA Astrophysics Data System (ADS)

    Miao, Lei; Shi, Jia-ming; Zhao, Da-peng; Liu, Hao; Wang, Chao; Xu, Yan-liang

    2015-11-01

    Visible light and near infrared based camouflage materials achieve good stealth under traditional optical detection equipment but its spectral differences with green plants can be taken advantage of by high spectrum based detection technologies. Based on the thin structure of bandpass filter, we designed an optical film with both green and near infrared spectrum. We conducted simulations using transfer matrix methods and optimized the result by simplex methods. The spectral reflectance curve of the proposed thin film matches that of green plants, and experiments show that the proposed thin film achieve good invisibility under visible light and near infrared in a wide viewing angle.

  19. Laser Deposition of Polymer Nanocomposite Thin Films and Hard Materials and Their Optical Characterization

    DTIC Science & Technology

    2013-12-05

    for fabrication of thin films including those composed of electro-optic BaTi03, piezoelectric ZnO , electroconductive Ti02, rare-earth (RE) doped ...22 A2. Form DD 0882: Report on Inventions 6 1. Introduction Since the work of Dijkkamp et al [1], the p u l s e d l a s e r a b l...time of the ablation of the doped materials w a s w e l l controlled to maintain a doping rate of 5% or less in the thin film. The

  20. Non-Traditional Spectroscopy for Analysis of Semiconductor and Photovoltaic Thin Film Materials

    NASA Astrophysics Data System (ADS)

    Li, Fuhe; Anderson, Scott

    2009-09-01

    Characterization of semiconductor thin films has long been determined by a number of traditional surface analysis techniques; Auger, ESCA/XPS, SEM-EDS and SIMS to name only a few. Depth profiles, contamination in the thin film or quantitative stoichiometry are specific application examples that predicate the technique best suited for the analysis need. The evolution of photovoltaic (PV) thin film compositions with new chemistries and growing importance of atomic layer deposition (ALD) for semiconductor and nanoscale applications provide a sustaining need for thin film analyses along with an avenue for new analytical tools. In this paper we will discuss the applications of two non-traditional material analysis techniques for the semiconductor and PV applications, glow discharge optical emission spectroscopy (RF GD-OES) and laser ablation inductively coupled plasma mass spectrometry (LA ICP-MS). Depth profiles are available via both techniques with the ability to analyze monolayers (single nm) as well as analysis in the bulk (μm thickness). Depth resolution capabilities allow analysis without surface equilibrium issues seen with other techniques. In addition, the charging effect that can cause issues with electron and ion beam techniques is avoided with RF GD-OES and LA ICP-MS, and thus analysis of both conductive and non-conductive materials is very straight-forward. Contaminant analysis in thin films is very straight-forward and elements across the periodic table are analyzed in a simultaneous mode with both techniques. Detection limits to part-per-billion levels can be achieved and quantitation at low concentrations up to 99% achieved with LA ICP-MS. Lastly, t will be discussed that for some thin film applications, LA ICP-MS and RF GD-OES provide advantages over more traditional techniques, and these aspects as well as complementary features will be discussed.

  1. Application of nanometer material in ultraviolet prevention thin film

    NASA Astrophysics Data System (ADS)

    Guo, Aihong; Tang, Xuejiao

    2013-03-01

    To mankind, ultraviolet ray from the sun is harmful and beneficial. But, in daily life, a lot of occasions, we hope to block the ultraviolet ray. Some people studied the nanometer particles which can block Ultraviolet ray. In this paper, the protection performance of nanometer particles, prapared by sol-gel method, added into polypropylene sour to ultraviolet has been studied. In order to improve the ultraviolet blocking of the thin film, more than one kind of nanometer particles are added into the polypropylene sour, the protection performance of the thin film is strengthened. When the ratio of the volume of 2% nanometer Al2O3 sol to the volume of 3% nanometer Fe2O3 sol is 1:3, the shielding effect on the ultraviolet including UVC, UVB and UVA band is significant. When the ratio of the volume of 2% nanometer Al2O3 sol to the volume of 2% nanometer Y2O3 sol is 1:3, the shielding effect on the UVC is the best. When the ratio of the volume of 2% nanometer Al2O3 sol to the volume of 1% nanometer ZnO sol is 1:2, the shielding effect on the UVC is the best. When the ratio of the volume of 3% nanometer Fe2O3 sol to the volume of 1% nanometer ZnO sol is 1:1, the shielding effect on the UVC is the best. To UVB and UVA, the shielding effect of 3% nanometer Fe2O3 single component is the best.When the ratio of the volume of 3% nanometer Fe2O3 sol to the volume of 2% nanometer Y2O3 sol is 1:2, the shielding effect on the UVC is the best. To UVB and UVA, the shielding effect of 3% nanometer Fe2O3 single component is the best.When the ratio of the volume of 1% nanometer ZnO sol to the volume of 2% nanometer Y2O3 sol is 1:2, the shielding effect on the ultraviolet including UVC, UVB and UVA band is significant.

  2. Rupture mechanism of liquid crystal thin films realized by large-scale molecular simulations

    SciTech Connect

    Nguyen, Trung D; Carrillo, Jan-Michael Y; Brown, W Michael; Matheson, Michael A

    2014-01-01

    The ability of liquid crystal (LC) molecules to respond to changes in their environment makes them an interesting candidate for thin film applications, particularly in bio-sensing, bio-mimicking devices, and optics. Yet the understanding of the (in)stability of this family of thin films has been limited by the inherent challenges encountered by experiment and continuum models. Using unprecedented largescale molecular dynamics (MD) simulations, we address the rupture origin of LC thin films wetting a solid substrate at length scales similar to those in experiment. Our simulations show the key signatures of spinodal instability in isotropic and nematic films on top of thermal nucleation, and importantly, for the first time, evidence of a common rupture mechanism independent of initial thickness and LC orientational ordering. We further demonstrate that the primary driving force for rupture is closely related to the tendency of the LC mesogens to recover their local environment in the bulk state. Our study not only provides new insights into the rupture mechanism of liquid crystal films, but also sets the stage for future investigations of thin film systems using peta-scale molecular dynamics simulations.

  3. Thin Film Delamination Using a High Power Pulsed Laser Materials Interaction

    NASA Astrophysics Data System (ADS)

    Sherman, Bradley

    Thin films attached to substrates are only effective while the film is adhered to the substrate. When the film begins to spall the whole system can fail, thus knowing the working strength of the film substrate system is important when designing structures. Surface acoustic waves (SAWs) are suitable for characterization of thin film mechanical properties due to the confinement of their energy within a shallow depth from a material surface. In this project, we study the feasibility of inducing dynamic interfacial failure in thin films using surface waves generated by a high power pulsed laser. Surface acoustic waves are modeled using a finite element numerical code, where the ablative interaction between the pulsed laser and the incident film is modeled using equivalent surface mechanical stresses. The numerical results are validated using experimental results from a laser ultrasonic setup. Once validated the normal film-substrate interfacial stress can be extracted from the numerical code and tends to be in the mega-Pascal range. This study uses pulsed laser generation to produce SAW in various metallic thin film/substrate systems. Each system varies in its response based on its dispersive relationship and as such requires individualized numerical modeling to match the experimental data. In addition to pulsed SAW excitation using an ablative source, a constrained thermo-mechanical load produced by the ablation of a metal film under a polymer layer is explored to generate larger dynamic mechanical stresses. These stresses are sufficient to delaminate the thin film in a manner similar to a peel test. However, since the loading is produced by a pulsed laser source, it occurs at a much faster rate, limiting the influence of slower damage modes that are present in quasi-static loading. This approach is explored to predict the interfacial fracture toughness of weak thin film interfaces.

  4. Highly-oriented molecular arrangements and enhanced magnetic interactions in thin films of CoTTDPz using PTCDA templates.

    PubMed

    Eguchi, Keitaro; Nanjo, Chihiro; Awaga, Kunio; Tseng, Hsiang-Han; Robaschik, Peter; Heutz, Sandrine

    2016-07-14

    In the present work, the templating effect of thin layers of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) on the growth of cobalt tetrakis(thiadiazole)porphyrazine (CoTTDPz) thin films was examined. X-ray diffraction and optical absorption spectra indicate that while CoTTDPz forms amorphous thin films on the bare substrates, it forms crystalline thin films on the PTCDA templates, in which the molecular planes of CoTTDPz are considered to be parallel to the substrates. Magnetic measurements reveal a significantly enhanced antiferromagnetic interaction of CoTTDPz in the templated thin films, with values reaching over 13 K. The ability to generate crystalline films and to control their orientation using molecular templates is an important strategy in the fields of organic electronics and spintronics in order to tailor the physical properties of organic thin films to suit their intended application.

  5. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  6. Nanoporous Thin Films and Binary Nanoparticle Superlattices Created by Directed Self-Assembly of Block Copolymer Hybrid Materials.

    PubMed

    Pietsch, Torsten; Müller-Buschbaum, Peter; Mahltig, Boris; Fahmi, Amir

    2015-06-17

    The design and development of well-defined, functional nanostructures via self-assembly is one of the key objectives in current nanotechnology. Block copolymer-based hybrid materials are attractive candidates for the fabrication of multifunctional nanostructures, which provide the building blocks for more complex nanoarchitectures and nanodevices. However, one of the major challenges lies in controlling the structure formation in these hybrid materials by guiding the self-assembly of the block copolymer. Here, hierarchical nanoporous structures are fabricated via guided multistep self-assembly of diblock copolymer micellar solutions onto hydrophilic solid substrates. The core of polystyrene-block-poly[4-vinylpyridine] micelles serves as a nanoreactor for the preparation of size-controlled gold nanoparticles. Deposition of thin films of the micellar solution in combination with a nonselective cosolvent (THF), on hydrophilic surfaces leads to the formation of hierarchical nanoporous structures. The micellar films exhibit two different pore diameters and a total pore density of more than 10(10) holes per cm2. Control over the pore diameter is achieved by adapting the molecular weight of the polystyrene-block-poly[4-vinylpyridine] diblock copolymer. Moreover, the porous morphology is used as a template for the fabrication of bimetallic nanostructured thin films. The PS-b-P4VP template is subsequently removed by oxygen plasma etching, leaving behind binary nanoparticle structures that mimic the original thin film morphology.

  7. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  8. NMR characterization of thin films

    DOEpatents

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  9. Tuning optoelectronic properties and understanding charge transport in nanocrystal thin films of earth abundant semiconducting materials

    NASA Astrophysics Data System (ADS)

    Riha, Shannon C.

    2011-12-01

    With the capability of producing nearly 600 TW annually, solar power is one renewable energy source with the potential to meet a large fraction of the world's burgeoning energy demand. To make solar technology cost-competitive with carbon-based fuels, cheaper devices need to be realized. Solution-processed solar cells from nanocrystal inks of earth abundant materials satisfy this requirement. Nonetheless, a major hurdle in commercializing such devices is poor charge transport through nanocrystal thin films. The efficiency of charge transport through nanocrystal thin films is strongly dependent on the quality of the nanocrystals, as well as their optoelectronic properties. Therefore, the first part of this dissertation is focused on synthesizing high quality nanocrystals of Cu2ZnSnS4, a promising earth abundant photovoltaic absorber material. The optoelectronic properties of the nanocrystals were tuned by altering the copper to zinc ratio, as well as by introducing selenium to create Cu2ZnSn(S1-xSe x)4 solid solutions. Photoelectrochemical characterization was used to test the Cu2ZnSnS4 and Cu2ZnSn(S 1-xSex)4 nanocrystal thin films. The results identify minority carrier diffusion and recombination via the redox shuttle as the major loss mechanisms hindering efficient charge transport through the nanocrystal thin films. One way to solve this issue is to sinter the nanocrystals together, creating large grains for efficient charge transport. Although this may be quick and effective, it can lead to the formation of structural defects, among other issues. To this end, using a different copper-based material, namely Cu2Se, and simple surface chemistry treatments, an alternative route to enhance charge transport through nanocrystals thin films is proposed.

  10. Material and sensing properties of Pd-deposited WO3 thin films.

    PubMed

    Choi, Gwangpyo; Jin, Guanghu; Park, Si-Hyun; Lee, Woonyoung; Park, Jinseong

    2007-11-01

    The physicochemical and electrical properties of Pd-deposited WO3 thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature for application as a hydrogen gas sensor. WO3 thin films were deposited on an insulating material using a thermal evaporator. X-ray diffractometry (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property of the films, respectively. The deposited films grew into polycrystalline WO3 with a rhombohedral structure after annealing at 500 degrees C. Adding Pd had no effect on the crystallinity, but suppressed the growth of WO3 grains. The Pd was scattered as isolated small spherical particles of PdO2 on the WO3 thin film after annealing at 500 degrees C, while it agglomerated as irregular large particles or diffused into the WO3 after annealing at 600 degrees C. PdO2 reduction under H2 and reoxidation under air were dependent on both the Pd deposition thickness and annealing conditions. The WO3 thin film with a 2-nm-thick Pd deposit showed a good response and recovery to H2 gas at a 250 degrees C operating temperature.

  11. Molecular-orientation-induced rapid roughening and morphology transition in organic semiconductor thin-film growth.

    PubMed

    Yang, Junliang; Yim, Sanggyu; Jones, Tim S

    2015-03-24

    We study the roughening process and morphology transition of organic semiconductor thin film induced by molecular orientation in the model of molecular semiconductor copper hexadecafluorophthalocyanine (F16CuPc) using both experiment and simulation. The growth behaviour of F16CuPc thin film with the thickness, D, on SiO2 substrate takes on two processes divided by a critical thickness: (1) D ≤ 40 nm, F16CuPc thin films are composed of uniform caterpillar-like crystals. The kinetic roughening is confirmed during this growth, which is successfully analyzed by Kardar-Parisi-Zhang (KPZ) model with scaling exponents α = 0.71 ± 0.12, β = 0.36 ± 0.03, and 1/z = 0.39 ± 0.12; (2) D > 40 nm, nanobelt crystals are formed gradually on the caterpillar-like crystal surface and the film growth shows anomalous growth behaviour. These new growth behaviours with two processes result from the gradual change of molecular orientation and the formation of grain boundaries, which conversely induce new molecular orientation, rapid roughening process, and the formation of nanobelt crystals.

  12. Molecular-Orientation-Induced Rapid Roughening and Morphology Transition in Organic Semiconductor Thin-Film Growth

    PubMed Central

    Yang, Junliang; Yim, Sanggyu; Jones, Tim S.

    2015-01-01

    We study the roughening process and morphology transition of organic semiconductor thin film induced by molecular orientation in the model of molecular semiconductor copper hexadecafluorophthalocyanine (F16CuPc) using both experiment and simulation. The growth behaviour of F16CuPc thin film with the thickness, D, on SiO2 substrate takes on two processes divided by a critical thickness: (1) D ≤ 40 nm, F16CuPc thin films are composed of uniform caterpillar-like crystals. The kinetic roughening is confirmed during this growth, which is successfully analyzed by Kardar-Parisi-Zhang (KPZ) model with scaling exponents α = 0.71 ± 0.12, β = 0.36 ± 0.03, and 1/z = 0.39 ± 0.12; (2) D > 40 nm, nanobelt crystals are formed gradually on the caterpillar-like crystal surface and the film growth shows anomalous growth behaviour. These new growth behaviours with two processes result from the gradual change of molecular orientation and the formation of grain boundaries, which conversely induce new molecular orientation, rapid roughening process, and the formation of nanobelt crystals. PMID:25801646

  13. Molecular orientation in soft matter thin films studied by resonant soft X-ray reflectivity

    SciTech Connect

    Mezger, Markus; Jerome, Blandine; Kortright, Jeffrey B.; Valvidares, Manuel; Gullikson, Eric; Giglia, Angelo; Mahne, Nicola; Nannarone, Stefano

    2011-01-12

    We present a technique to study depth profiles of molecular orientation in soft matter thin films with nanometer resolution. The method is based on dichroism in resonant soft X-ray reflectivity using linear s- and p-polarization. It combines the chemical sensitivity of Near-Edge X-ray Absorption Fine Structure spectroscopy to specific molecular bonds and their orientation relative to the polarization of the incident beam with the precise depth profiling capability of X-ray reflectivity. We demonstrate these capabilities on side chain liquid crystalline polymer thin films with soft X-ray reflectivity data at the carbon K edge. Optical constants of the anisotropic refractive index ellipsoid were obtained from a quantitative analysis using the Berreman formalism. For films up to 50 nm thickness we find that the degree of orientation of the long axis exhibits no depth variation and isindependent of the film thickness.

  14. Control method and system for use when growing thin-films on semiconductor-based materials

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    2001-01-01

    A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.

  15. Molecular layer-by-layer assembled thin-film composite membranes for water desalination.

    PubMed

    Gu, Joung-Eun; Lee, Seunghye; Stafford, Christopher M; Lee, Jong Suk; Choi, Wansuk; Kim, Bo-Young; Baek, Kyung-Youl; Chan, Edwin P; Chung, Jun Young; Bang, Joona; Lee, Jung-Hyun

    2013-09-14

    Molecular layer-by-layer (mLbL) assembled thin-film composite membranes fabricated by alternating deposition of reactive monomers on porous supports exhibit both improved salt rejection and enhanced water flux compared to traditional reverse osmosis membranes prepared by interfacial polymerization. Additionally, the well-controlled structures achieved by mLbL deposition further lead to improved antifouling performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Molecular Aspects of Transport in Thin Films of Controlled Architecture

    SciTech Connect

    Paul W. Bohn

    2009-04-16

    coupled to analyte sampling both by LIF and mass spectrometry. Detection of electrophoresis separation products by electrospray mass spectrometry was achieved through direct interfacing to an electrospray mass spectrometer. Pb(II) interactions with the DNAzyme have been realized in an NCAM-coupled integrated microfluidic structure allowing cation separations to be coupled to molecular beacon detection motifs for the determination of Pb(II) in an electroplating sludge reference material. By changing the DNAzyme to select for other compounds of interest, it is possible to incorporate multiple sensing systems within a single device, thereby achieving great flexibility.

  17. Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and their Characterization

    DTIC Science & Technology

    1993-12-01

    U AD-A274 325 Semiannual Technical Report U Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their... Group IV Materials: Surface Processes, Thin 414v001---01 Films, Devices and Their Characterization 1114SS S. AUTHOS) N00179 Robert F. Davis, Salah... Conformal deposition of SiC has been demonstrated within trenches etched into Si(100) wafers. P-type films have also been achieved using Al as a

  18. Determination of Structural Parameters of Thin-Film Photocatalytic Materials by BDS

    NASA Astrophysics Data System (ADS)

    Korte, Dorota; Franko, Mladen

    2015-09-01

    A method for determination of structural parameters of some thin-film photocatalytic materials is presented. The analysis was based on the material's thermal parameter dependences on its surface structure or porosity and was thus performed by the use of beam deflection spectroscopy (BDS) supported by theoretical analysis made in the framework of complex geometrical optics. The results obtained by BDS were than compared with those received on the basis of AFM and SEM measurements and found to be in good agreement.

  19. Effect of Initial Bulk Material Composition on Thermoelectric Properties of Bi2Te3 Thin Films

    NASA Astrophysics Data System (ADS)

    Budnik, A. V.; Rogacheva, E. I.; Pinegin, V. I.; Sipatov, A. Yu.; Fedorov, A. G.

    2013-07-01

    V2VI3 compounds and solid solutions based on them are known to be the best low-temperature thermoelectric (TE) materials. The predicted possibility of enhancement of the TE figure of merit in two-dimensional (2D) structures has stimulated studies of the properties of these materials in the thin-film state. The goal of the present work is to study the dependences of the Seebeck coefficient S, electrical conductivity σ, Hall coefficient R H, charge carrier mobility μ H, and TE power factor P = S 2 σ of Bi2Te3 thin films on the composition of the initial bulk material used for preparing them. Thin films with thickness d = 200 nm to 250 nm were grown by thermal evaporation in vacuum of stoichiometric Bi2Te3 crystals (60.0 at.% Te) and of crystals with 62.8 at.% Te onto glass substrates at temperatures T S of 320 K to 500 K. It was established that the conductivity type of the initial material is reproduced in films fairly well. For both materials, an increase in T S leads to an increase in the thin-film structural perfection, better correspondence between the film composition and that of the initial material, and increase in S, R H, μ H, σ, and P. The room-temperature maximum values of P for the films grown from crystals with 60.0 at.% and 62.8 at.% Te are P = 7.5 × 10-4 W/K2 m and 35 × 10-4 W/K2 m, respectively. Thus, by using Bi2Te3 crystals with different stoichiometry as initial materials, one can control the conductivity type and TE parameters of the films, applying a simple and low-cost method of thermal evaporation from a single source.

  20. Facile nucleation of gold nanoparticles on graphene-based thin films from Au144 molecular precursors

    NASA Astrophysics Data System (ADS)

    Venter, Andrei; Hesari, Mahdi; Shafiq Ahmed, M.; Bauld, Reg; Workentin, Mark S.; Fanchini, Giovanni

    2014-04-01

    We demonstrate a facile and cost effective method to obtain gold nanoparticles on graphene by dispersing Au144 molecular nanoclusters by spin coating them in thin layers on graphene-based films and subsequent annealing in a controlled atmosphere. The graphene-based thin films used for these experiments are prepared by solvent-assisted exfoliation of graphite in water in the presence of ribonucleic acid as a surfactant and by subsequent vacuum filtration of the resulting graphene-containing suspensions. Not only is this method easily reproducible, but it leads to gold nanoparticles that are not dependent in size on the number of graphene layers beneath them. This is a distinct advantage over other methods. Plasmonic effects have been detected in our gold nanoparticle-decorated graphene layers, indicating that these thin films may be useful in applications such as plasmonic solar cells and optical memory devices.

  1. Dependence of equilibrium stacking fault width on thickness of Cu thin films: A molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Rohith, P.; Sainath, G.; Choudhary, B. K.

    2017-05-01

    In face centered cubic systems, due to decrease in energy all perfect dislocations dissociates into two Shockley partials separated by stacking fault width. The stacking fault width, which influences the deformation behavior depends on many factors such as composition, stacking fault energy, temperature, surface energy and applied stress. Additionally in thin films, thickness also influences the stacking fault width of dissociated dislocations. In this paper, we investigate the effect of thin film thickness on stacking fault width in Cu using molecular dynamics simulations. The results indicate that with increase in film thickness from 1.25 nm to 11 nm, the stacking fault width increases from 1.6 nm to 3.12 nm. A bi-linear behavior has been observed. Above 11 nm thickness, the width of stacking fault has attained a saturation at higher thickness. This thickness dependent dissociation has been explained using the concept of image dislocations and associated image forces.

  2. Structured Ionomer Thin Films at Water Interface: Molecular Dynamics Simulation Insight

    DOE PAGES

    Aryal, Dipak; Agrawal, Anupriya; Perahia, Dvora; ...

    2017-08-23

    Controlling the structure and dynamics of thin films of ionizable polymers at water interfaces is critical to their many applications. As the chemical diversity within one polymer is increased, controlling the structure and dynamics of the polymer, which is a key to their use, becomes a challenge. Here molecular dynamics simulations (MD) are used to obtain molecular insight into the structure and dynamics of thin films of one such macromolecule at the interface with water. The polymer consists of an ABCBA topology with randomly sulfonated polystyrene (C), tethered symmetrically to flexible poly(ethylene-r-propylene) blocks (B), and end-capped by a poly(t-butylstyrene) blockmore » (A). The compositions of the interfacial and bulk regions of thin films of the ABCBA polymers are followed as a function of exposure time to water. We find that interfacial rearrangements take place where buried ionic segments migrate toward the water interface. The hydrophobic blocks collapse and rearrange to minimize their exposure to water. In conclusion, the water that initially drives interfacial reengagements breaks the ionic clusters within the film, forming a dynamic hydrophilic internal network within the hydrophobic segments.« less

  3. Structured Ionomer Thin Films at Water Interface: Molecular Dynamics Simulation Insight.

    PubMed

    Aryal, Dipak; Agrawal, Anupriya; Perahia, Dvora; Grest, Gary S

    2017-09-08

    Controlling the structure and dynamics of thin films of ionizable polymers at water interfaces is critical to their many applications. As the chemical diversity within one polymer is increased, controlling the structure and dynamics of the polymer, which is a key to their use, becomes a challenge. Here molecular dynamics simulations (MD) are used to obtain molecular insight into the structure and dynamics of thin films of one such macromolecule at the interface with water. The polymer consists of an ABCBA topology with randomly sulfonated polystyrene (C), tethered symmetrically to flexible poly(ethylene-r-propylene) blocks (B), and end-capped by a poly(t-butylstyrene) block (A). The compositions of the interfacial and bulk regions of thin films of the ABCBA polymers are followed as a function of exposure time to water. We find that interfacial rearrangements take place where buried ionic segments migrate toward the water interface. The hydrophobic blocks collapse and rearrange to minimize their exposure to water. The water that initially drives interfacial reengagements breaks the ionic clusters within the film, forming a dynamic hydrophilic internal network within the hydrophobic segments.

  4. Role of Molecular Conformations in Rubrene Thin Film Growth

    SciTech Connect

    Kaefer, D.; Ruppel, L.; Witte, G.; Woell, Ch.

    2005-10-14

    A systematic analysis of the growth of rubrene (C{sub 42}H{sub 28}), an organic molecule that currently attracts considerable attention with regard to its application in molecular electronics, is carried out by using x-ray absorption spectroscopy and thermal desorption spectroscopy. The results allow us to unravel a fundamental mechanism that effectively limits organic epitaxy for a large class of organic molecules. If the structure of the free molecule differs substantially from that of the corresponding molecular structure in the bulk, the crystallization is severely hampered.

  5. Evaporation system and method for gas jet deposition of thin film materials

    DOEpatents

    Schmitt, J.J.; Halpern, B.L.

    1994-10-18

    A method and apparatus are disclosed for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases. 8 figs.

  6. Centrifugation-based Purification of Emerging Low-dimensional Materials and Their Thin-film Applications

    NASA Astrophysics Data System (ADS)

    Seo, Jung Woo

    Polydispersity in low-dimensional materials offers many interesting challenges and properties. In particular, the one- and two-dimensional carbon allotropes such as carbon nanotubes and graphene have demonstrated exquisite optoelectronic properties that are highly sensitive to their physical structures, where subtle variations in diameter and thickness render them with significantly different electronic band structures. Thus, the carbon nanomaterials have been the subject of extensive studies that address their polydispersity issues. Among these, solution-phase, buoyant density-based methods such as density gradient ultracentrifugation have been widely utilized to enrich subpopulations of carbon nanotubes and graphene with narrow distribution in diameter and thickness, enabling their applications in various next-generation thin-film devices. In this thesis, I present further advancement of centrifugation-based processing methods for emerging low-dimensional materials through systematic utilization of previously explored surfactant systems, development of novel surfactant types, and study of correlation between the chemical structure of surfactants and the dispersion and optoelectronic properties of the nanomaterials. First, I employ an iterative density gradient ultracentrifugation with a combination of anionic surfactants and addition of excess counter-ions to achieve isolation of novel diameter species of semiconducting single-walled carbon nanotubes. The purification of carbon nanotubes with simultaneous, ultrahigh-purity refinement in electronic type and diameter distribution leads to collaborative studies on heat distribution characteristics and diameter-dependent direct current and radio frequency performances in monodisperse carbon nanotube thin-film transistors. Next, I develop the use of non-ionic polymeric surfactants for centrifugation-based processes. Specifically, I utilize polypropylene and polyethylene oxide-based block copolymers with density

  7. Reduced graphene oxide/molecular imprinted polymer-organic thin film transistor for amino acid detection

    NASA Astrophysics Data System (ADS)

    Halim, Nurul Farhanah AB.; Musa, Nur Hazwani; Zakaria, Zulkhairi; Von Schleusingen, Mubaraq; Ahmad, Mohd Noor; Derman, Nazree; Shakaff, Ali Yeon Md.

    2017-03-01

    This works reports the electrical performance of reduced graphene oxide (RGO)/Molecular imprinted polymer (MIP)- organic thin film transistor (OTFT) for amino-acid detection, serine. These biomimetic sensors consider MIP as man-tailored biomimetic recognition sites that play an important role in signal transduction. MIP provides recognition sites compatible with serine molecules was developed by dispersing serine with methylacrylate acid (MAA) as functional monomer and Ethylene glycol dimethylacrylate (EGDMA) as cross-linker. The imprinted polymeric were mixed with reduced graphene oxide to produced sensing layer for the sensor. RGO-MIP layer was introduced between source and drain of OTFT via spin coating as a detecting layer for serine molecules. RGO was introduced into MIP, to allow a highly conductive sensing material thus enhanced selectivity and sensitivity of the sensor. By analyzing the electrical performance of the sensors, the performances of OTFT sensor enhanced with RGO/MIP interlayer and OTFT sensor with MIP interlayer when exposed to serine analyte were obtained. The results showed that there were remarkable shifts of drain current (ID) obtained from OTFT sensor with RGO/MIP interlayer after exposed to serine analyte. Moreover, the sensitivity of OTFT sensor with RGO/MIP interlayer was nearly higher than the OTFT sensor with MIP interlayer. Hence, it proved that RGO successfully enhanced the sensing performance of OTFT sensor.

  8. Determination of Selected Material Properties of Castable Thin Film Polyimides for Applications in Solar Thermal Propulsion

    NASA Astrophysics Data System (ADS)

    Paxton, James P.

    1994-04-01

    Partial contents; This Study will, WHat is a thin film?, An application of Thin Film polyimides, Typical Solar Thermal Rocket Configuration, Benefits of 6FDA +APB Thin Films, Design Parameters for Articles constructed with thin film polyimides, theory, thin film test apparatus, unlaxial test appartus, toggle grip design, computer test panel, experimental procedure, Modulus of Elasticity results, Coefficient of Thermal Expansion results, Conclusions and Recommendations, Acknowledgement.

  9. Low molecular weight protein enrichment on mesoporous silica thin films for biomarker discovery.

    PubMed

    Fan, Jia; Gallagher, James W; Wu, Hung-Jen; Landry, Matthew G; Sakamoto, Jason; Ferrari, Mauro; Hu, Ye

    2012-04-17

    The identification of circulating biomarkers holds great potential for non invasive approaches in early diagnosis and prognosis, as well as for the monitoring of therapeutic efficiency.(1-3) The circulating low molecular weight proteome (LMWP) composed of small proteins shed from tissues and cells or peptide fragments derived from the proteolytic degradation of larger proteins, has been associated with the pathological condition in patients and likely reflects the state of disease.(4,5) Despite these potential clinical applications, the use of Mass Spectrometry (MS) to profile the LMWP from biological fluids has proven to be very challenging due to the large dynamic range of protein and peptide concentrations in serum.(6) Without sample pre-treatment, some of the more highly abundant proteins obscure the detection of low-abundance species in serum/plasma. Current proteomic-based approaches, such as two-dimensional polyacrylamide gel-electrophoresis (2D-PAGE) and shotgun proteomics methods are labor-intensive, low throughput and offer limited suitability for clinical applications.(7-9) Therefore, a more effective strategy is needed to isolate LMWP from blood and allow the high throughput screening of clinical samples. Here, we present a fast, efficient and reliable multi-fractionation system based on mesoporous silica chips to specifically target and enrich LMWP.(10,11) Mesoporous silica (MPS) thin films with tunable features at the nanoscale were fabricated using the triblock copolymer template pathway. Using different polymer templates and polymer concentrations in the precursor solution, various pore size distributions, pore structures, connectivity and surface properties were determined and applied for selective recovery of low mass proteins. The selective parsing of the enriched peptides into different subclasses according to their physicochemical properties will enhance the efficiency of recovery and detection of low abundance species. In combination with mass

  10. Low Molecular Weight Protein Enrichment on Mesoporous Silica Thin Films for Biomarker Discovery

    PubMed Central

    Fan, Jia; Gallagher, James W.; Wu, Hung-Jen; Landry, Matthew G.; Sakamoto, Jason; Ferrari, Mauro; Hu, Ye

    2012-01-01

    The identification of circulating biomarkers holds great potential for non invasive approaches in early diagnosis and prognosis, as well as for the monitoring of therapeutic efficiency.1-3 The circulating low molecular weight proteome (LMWP) composed of small proteins shed from tissues and cells or peptide fragments derived from the proteolytic degradation of larger proteins, has been associated with the pathological condition in patients and likely reflects the state of disease.4,5 Despite these potential clinical applications, the use of Mass Spectrometry (MS) to profile the LMWP from biological fluids has proven to be very challenging due to the large dynamic range of protein and peptide concentrations in serum.6 Without sample pre-treatment, some of the more highly abundant proteins obscure the detection of low-abundance species in serum/plasma. Current proteomic-based approaches, such as two-dimensional polyacrylamide gel-electrophoresis (2D-PAGE) and shotgun proteomics methods are labor-intensive, low throughput and offer limited suitability for clinical applications.7-9 Therefore, a more effective strategy is needed to isolate LMWP from blood and allow the high throughput screening of clinical samples. Here, we present a fast, efficient and reliable multi-fractionation system based on mesoporous silica chips to specifically target and enrich LMWP.10,11 Mesoporous silica (MPS) thin films with tunable features at the nanoscale were fabricated using the triblock copolymer template pathway. Using different polymer templates and polymer concentrations in the precursor solution, various pore size distributions, pore structures, connectivity and surface properties were determined and applied for selective recovery of low mass proteins. The selective parsing of the enriched peptides into different subclasses according to their physicochemical properties will enhance the efficiency of recovery and detection of low abundance species. In combination with mass

  11. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    Electroluminescent materials and device technology were assessed. The evaluation strongly suggests the need for a comprehensive theoretical and experimental study of both materials and device structures, particularly in the following areas: carrier generation and multiplication; radiative and nonradiative processes of luminescent centers; device modeling; new device concepts; and single crystal materials growth and characterization. Modeling of transport properties of hot electrons in ZnSe and the generation of device concepts were initiated.

  12. Magnetic Properties of FeNi-Based Thin Film Materials with Different Additives

    PubMed Central

    Liang, Cai; Gooneratne, Chinthaka P.; Wang, Qing Xiao; Liu, Yang; Gianchandani, Yogesh; Kosel, Jurgen

    2014-01-01

    This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials attractive for sensor applications. Our findings show that FeNi deposited with Mo or Al yields magnetically soft materials and that depositing with B further increases the softness. The out-of-plane magnetic anisotropy of FeNi thin films is reduced by depositing with Al and completely removed by depositing with B. The effect of depositing with Mo is dependent on the Mo concentration. The coercivity of FeNiMo and FeNiAl is reduced to less than a half of that of FeNi, and a value as low as 40 A/m is obtained for FeNiB. The surfaces of the obtained FeNiMo, FeNiAl and FeNiB thin films reveal very different morphologies. The surface of FeNiMo shows nano-cracks, while the FeNiAl films show large clusters and fewer nano-cracks. When FeNi is deposited with B, a very smooth morphology is obtained. The crystal structure of FeNiMo strongly depends on the depositant concentration and changes into an amorphous structure at a higher Mo level. FeNiAl thin films remain polycrystalline, even at a very high concentration of Al, and FeNiB films are amorphous, even at a very low concentration of B. PMID:25587418

  13. Magnetic Properties of FeNi-Based Thin Film Materials with Different Additives.

    PubMed

    Liang, Cai; Gooneratne, Chinthaka P; Wang, Qing Xiao; Liu, Yang; Gianchandani, Yogesh; Kosel, Jurgen

    2014-09-01

    This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials attractive for sensor applications. Our findings show that FeNi deposited with Mo or Al yields magnetically soft materials and that depositing with B further increases the softness. The out-of-plane magnetic anisotropy of FeNi thin films is reduced by depositing with Al and completely removed by depositing with B. The effect of depositing with Mo is dependent on the Mo concentration. The coercivity of FeNiMo and FeNiAl is reduced to less than a half of that of FeNi, and a value as low as 40 A/m is obtained for FeNiB. The surfaces of the obtained FeNiMo, FeNiAl and FeNiB thin films reveal very different morphologies. The surface of FeNiMo shows nano-cracks, while the FeNiAl films show large clusters and fewer nano-cracks. When FeNi is deposited with B, a very smooth morphology is obtained. The crystal structure of FeNiMo strongly depends on the depositant concentration and changes into an amorphous structure at a higher Mo level. FeNiAl thin films remain polycrystalline, even at a very high concentration of Al, and FeNiB films are amorphous, even at a very low concentration of B.

  14. Photoluminescence of localized excitons in ZnCdO thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wu, T. Y.; Huang, Y. S.; Hu, S. Y.; Lee, Y. C.; Tiong, K. K.; Chang, C. C.; Shen, J. L.; Chou, W. C.

    2016-07-01

    We have investigated the luminescence characteristics of Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system. The temperature-dependent photoluminescence (PL) and excitation power-dependent PL spectra were measured to clarify the luminescence mechanisms of the Zn1-xCdxO thin films. The peak energy of the Zn1-xCdxO thin films with increasing the Cd concentration is observed as redshift and can be fitted by the quadratic function of alloy content. The broadened full-width at half-maximum (FWHM) estimated from the 15 K PL spectra as a function of Cd content shows a larger deviation between the experimental values and theoretical curve, which indicates that experimental FWHM values are affected not only by alloy compositional disorder but also by localized excitons occupying states in the tail of the density of states. The Urbach energy determined from an analysis of the lineshape of the low-energy side of the PL spectrum and the degree of localization effect estimated from the temperature-induced S-shaped PL peak position described an increasing mean exciton-localization effects in ZnCdO films with increasing the Cd content. In addition, the PL intensity and peak position as a function of excitation power are carried out to clarify the types of radiative recombination and the effects of localized exciton in the ZnCdO films with different Cd contents.

  15. Recent progress in high-mobility thin-film transistors based on multilayer 2D materials

    NASA Astrophysics Data System (ADS)

    Hong, Young Ki; Liu, Na; Yin, Demin; Hong, Seongin; Kim, Dong Hak; Kim, Sunkook; Choi, Woong; Yoon, Youngki

    2017-04-01

    Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance.

  16. Simulation studies of the tribological behavior of molecularly thin films

    NASA Astrophysics Data System (ADS)

    He, Gang

    2002-09-01

    In this thesis I used molecular dynamics simulations to study two nanotribological problems. The first is the frictional behavior of adsorbed molecules. Macroscopic objects almost always exhibit a finite static friction and a kinetic friction that is slightly smaller at low velocities. However, molecular scale theories of friction between bare surfaces predict that the static friction almost always vanishes and is not closely related to the kinetic friction. Of course most real surfaces are not bare, but are coated with a layer of adsorbed molecules. Our simulation results show that these molecules naturally lead to a finite static friction that is consistent with macroscopic friction laws. We found that parameters that are not controlled in experiments, i.e., crystalline alignment, sliding direction, and the number of adsorbed molecules have little effect on the friction. Temperature, molecular geometry and interaction potentials can have larger effects on friction. The kinetic friction is found to rise logarithmically with velocity as in many experimental systems. Variations in static and kinetic friction are highly correlated. This correlation is understood through analogy with the Tomlinson model and the trends are explained with a hard-sphere picture. We also studied the microscopic flow boundary condition due to rough surfaces: Generally slip at the interface can be quantified by a slip length S that represents the additional width of fluid that would be needed to accommodate any velocity difference at the interface. Previous simulations with atomically flat surfaces show that S can be very large in certain limits. A dramatic divergence of S as shear rate increases has also been reported. We have extended these simulations to surfaces with random roughness, steps, and angled facets typical of twin boundaries. In all cases, S decreases rapidly as the roughness increases. When peak-to-peak roughness is only two atomic diameters, values of S have dropped from

  17. Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material.

    PubMed

    Hauser, Christoph; Richter, Tim; Homonnay, Nico; Eisenschmidt, Christian; Qaid, Mohammad; Deniz, Hakan; Hesse, Dietrich; Sawicki, Maciej; Ebbinghaus, Stefan G; Schmidt, Georg

    2016-02-10

    We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15 ± 1.50) · 10(-5) is found and the linewidth at 9.6 GHz is as small as 1.30 ± 0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35 ± 1.40) · 10(-5) is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49 ± 0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials.

  18. Full potential of radial junction Si thin film solar cells with advanced junction materials and design

    NASA Astrophysics Data System (ADS)

    Qian, Shengyi; Misra, Soumyadeep; Lu, Jiawen; Yu, Zhongwei; Yu, Linwei; Xu, Jun; Wang, Junzhuan; Xu, Ling; Shi, Yi; Chen, Kunji; Roca i Cabarrocas, Pere

    2015-07-01

    Combining advanced materials and junction design in nanowire-based thin film solar cells requires a different thinking of the optimization strategy, which is critical to fulfill the potential of nano-structured photovoltaics. Based on a comprehensive knowledge of the junction materials involved in the multilayer stack, we demonstrate here, in both experimental and theoretical manners, the potential of hydrogenated amorphous Si (a-Si:H) thin film solar cells in a radial junction (RJ) configuration. Resting upon a solid experimental basis, we also assess a more advanced tandem RJ structure with radially stacking a-Si:H/nanocrystalline Si (nc-Si:H) PIN junctions, and show that a balanced photo-current generation with a short circuit current density of Jsc = 14.2 mA/cm2 can be achieved in a tandem RJ cell, while reducing the expensive nc-Si:H absorber thickness from 1-3 μ m (in planar tandem cells) to only 120 nm. These results provide a clearly charted route towards a high performance Si thin film photovoltaics.

  19. Frequency-domain Harman technique for rapid characterization of bulk and thin film thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Moran, Samuel

    Nanostructured thermoelectrics, often in the form of thin films, may potentially improve the generally poor efficiency of bulk thermoelectric power generators and coolers. In order to characterize the efficiency of these new materials it is necessary to measure their thermoelectric figure of merit, ZT. The only direct measurement of ZT is based on the Harman technique and relies on measuring the voltage drop across a sample subjected to a passing continuous current. Application of this technique to thin films is currently carried out as a time-domain measurement of the voltage as the thermal component decays after switching off an applied voltage. This work develops a technique for direct simultaneous measurement of figure of merit and Seebeck coefficient from the harmonic response of a thermoelectric material under alternating current excitation. A thermocouple mounted on the top surface measures voltage across the device as the frequency of the applied voltage is varied. A thermal model allows the sample thermal conductivity to also be determined and shows good agreement with measurements. This technique provides improved signal-to-noise ratio and accuracy compared to time-domain ZT measurements for comparable conditions while simultaneously measuring Seebeck coefficient. The technique is applied to both bulk and thin film thermoelectric samples.

  20. Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material

    PubMed Central

    Hauser, Christoph; Richter, Tim; Homonnay, Nico; Eisenschmidt, Christian; Qaid, Mohammad; Deniz, Hakan; Hesse, Dietrich; Sawicki, Maciej; Ebbinghaus, Stefan G.; Schmidt, Georg

    2016-01-01

    We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15 ± 1.50) · 10−5 is found and the linewidth at 9.6 GHz is as small as 1.30 ± 0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35 ± 1.40) · 10−5 is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49 ± 0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials. PMID:26860816

  1. Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material

    NASA Astrophysics Data System (ADS)

    Hauser, Christoph; Richter, Tim; Homonnay, Nico; Eisenschmidt, Christian; Qaid, Mohammad; Deniz, Hakan; Hesse, Dietrich; Sawicki, Maciej; Ebbinghaus, Stefan G.; Schmidt, Georg

    2016-02-01

    We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15 ± 1.50) · 10‑5 is found and the linewidth at 9.6 GHz is as small as 1.30 ± 0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35 ± 1.40) · 10‑5 is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49 ± 0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials.

  2. High-Throughput Structural and Functional Characterization of the Thin Film Materials System Ni-Co-Al.

    PubMed

    Decker, Peer; Naujoks, Dennis; Langenkämper, Dennis; Somsen, Christoph; Ludwig, Alfred

    2017-08-11

    High-throughput methods were used to investigate a Ni-Co-Al thin film materials library, which is of interest for structural and functional applications (superalloys, shape memory alloys). X-ray diffraction (XRD) measurements were performed to identify the phase regions of the Ni-Co-Al system in its state after annealing at 600 °C. Optical, electrical, and magneto-optical measurements were performed to map functional properties and confirm XRD results. All results and literature data were used to propose a ternary thin film phase diagram of the Ni-Co-Al thin film system.

  3. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Benz, R., II

    1987-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as accessed by x ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  4. SAW chemical sensor arrays using new thin-film materials

    SciTech Connect

    Ricco, A.J.; Xu, Chuanjing; Crooks, R.M.; Allred, R.E.

    1994-05-01

    We have used two classes of materials, self-assembled monolayers (SAMs) and plasma-grafted films (PGFs), as new chemically sensitive layers for an array of 97-MHz surface acoustic wave (SAW) delay-line-based devices. Responses of these materials to each of 14 different analytes, representing the classes of saturated alkane, aromatic hydrocarbon, chlorinated hydrocarbon, alcohol, ketone, organophosphonate, and water, have been evaluated using our six-SAW device array. Results reveal a qualitative ``chemical orthogonality`` of the films that is very promising for pattern recognition analysis.

  5. Self-regulated growth of LaVO{sub 3} thin films by hybrid molecular beam epitaxy

    SciTech Connect

    Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

    2015-06-08

    LaVO{sub 3} thin films were grown on SrTiO{sub 3} (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO{sub 3} films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application.

  6. Multilayer Growth of Porphyrin-Based Polyurea Thin Film Using Solution-Based Molecular Layer Deposition Technique.

    PubMed

    Uddin, S M Nizam; Nagao, Yuki

    2017-10-12

    Controllable synthesis of organic thin film materials on solid surfaces is a challenging issue in the research field of surface science as it is affected by several physical parameters. In this work, we demonstrated a solution-based molecular layer deposition (MLD) approach to prepare porphyrin-based covalent organic molecular networks on a 3-aminopropyl trimethoxysilane (APTMS) modified substrate surface using the urea coupling reaction between 1,4-phenylene diisocyanate (1,4-PDI) and 5,10,15,20-tetrakis-(4-aminophenyl) porphyrin (H2TAPP) at room temperature (22 ± 2 ºC). Multilayer growth was investigated under different relative humidity (RH) conditions of the reaction chamber. Sequential molecular growth at low relative humidity (≤10% RH) was observed using UV-vis absorption spectroscopy and atomic force microscopy (AFM). The high-RH condition shows limited film growth. Infrared spectroscopy (IR) and X-ray photoelectron spectroscopy (XPS) revealed the polyurea bond formation in sequential multilayer thin films, demonstrating that stepwise multilayer film growth was achieved using the urea coupling reaction.

  7. Novel photoresist thin films with in-situ photoacid generator by molecular layer deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Han; Bent, Stacey F.

    2013-03-01

    Current photoresist materials are facing many challenges introduced by advanced lithographies, particularly the need for excellent compositional homogeneity and ultrathin film thickness. Traditional spin-on polymeric resists have inherent limitations in achieving a high level of control over the chemical composition, leading to interest in development of alternative methods for making photoresists. In this work, we demonstrate that molecular layer deposition (MLD) is a potential method for synthesizing photoresists because it allows for precise control over organic film thickness and composition. MLD utilizes sequential, self-limiting reactions of organic precursors to build a thin film directly on a substrate surface and grows organic films by depositing only one molecular layer at each precursor dose, which in turn allows for fine-tuning of the position and concentration of various functionalities in the deposited film. In this study, we use bifunctional precursors, diamine and diisocyanate, to build polyurea resist films via urea coupling reaction between the amine and isocyanate groups. Acid-labile groups and photoacid generators (PAGs) are embedded in the backbone of the resist films with a highly uniform distribution. The resist films were successfully deposited and characterized for both materials properties and resist response. E-beam patterning was achieved with the resist films. Cross-linking behavior of the resist films was observed, likely due to the aromatic rings in the films, which is undesirable for application as a positive-tone photoresist. Moreover, the in-situ polymer-bound PAGs had low sensitivity. It is suggested that this effect may arise because the PAG is cation-bound, leading to lower efficiency of sulfur-carbon bond cleavage in the sulfonium cation, which is needed to produce the photoacid, and consequently a lower photoacid yield. Further work is needed to improve the performance of the MLD resist films.

  8. Development of a Thin Film Magnetic Moment Reference Material

    PubMed Central

    Pappas, D. P.; Halloran, S. T.; Owings, R. R.; da Silva, F. C. S.

    2008-01-01

    In this paper we present the development of a magnetic moment reference material for low moment magnetic samples. We first conducted an inter-laboratory comparison to determine the most useful sample dimensions and magnetic properties for common instruments such as vibrating sample magnetometers (VSM), SQUIDs, and alternating gradient field magnetometers. The samples were fabricated and then measured using a vibrating sample magnetometer. Their magnetic moments were calibrated by tracing back to the NIST YIG sphere, SRM 2853. PMID:27096108

  9. Molecular beam epitaxy deposition of Gd2O3 thin films on SrTiO3 (100) substrate

    NASA Astrophysics Data System (ADS)

    Wang, Jinxing; Hao, Jinghua; Zhang, Yangyang; Wei, Hongmei; Mu, Juyi

    2016-06-01

    Gd2O3 thin films are grown on the SrTiO3 (100) substrate by molecular beam epitaxy (MBE) deposition. X-ray diffraction (XRD) analysis, conventional transmission electron microscopy (TEM) and aberration-corrected scanning transmission electron microscopy (STEM) are performed to investigate the microstructure of deposited thin films. It is found that the as-deposited thin film possesses a very uniform thickness of ∼40 nm and is composed of single cubic phase Gd2O3 grains. STEM and TEM observations reveal that Gd2O3 thin film grows epitaxially on the SrTiO3 (100) substrate with (001)Gd2O3//(100)STO and [110]Gd2O3//[001]STO orientations. Furthermore, the Gd atoms are found to diffuse into the SrTiO3 substrate for a depth of one unit cell and substitute for the Sr atoms near the interface.

  10. Simultaneous measurement of thermal conductivity and heat capacity of bulk and thin film materials using frequency-dependent transient thermoreflectance method.

    PubMed

    Liu, Jun; Zhu, Jie; Tian, Miao; Gu, Xiaokun; Schmidt, Aaron; Yang, Ronggui

    2013-03-01

    The increasing interest in the extraordinary thermal properties of nanostructures has led to the development of various measurement techniques. Transient thermoreflectance method has emerged as a reliable measurement technique for thermal conductivity of thin films. In this method, the determination of thermal conductivity usually relies much on the accuracy of heat capacity input. For new nanoscale materials with unknown or less-understood thermal properties, it is either questionable to assume bulk heat capacity for nanostructures or difficult to obtain the bulk form of those materials for a conventional heat capacity measurement. In this paper, we describe a technique for simultaneous measurement of thermal conductivity κ and volumetric heat capacity C of both bulk and thin film materials using frequency-dependent time-domain thermoreflectance (TDTR) signals. The heat transfer model is analyzed first to find how different combinations of κ and C determine the frequency-dependent TDTR signals. Simultaneous measurement of thermal conductivity and volumetric heat capacity is then demonstrated with bulk Si and thin film SiO2 samples using frequency-dependent TDTR measurement. This method is further testified by measuring both thermal conductivity and volumetric heat capacity of novel hybrid organic-inorganic thin films fabricated using the atomic∕molecular layer deposition. Simultaneous measurement of thermal conductivity and heat capacity can significantly shorten the development∕discovery cycle of novel materials.

  11. Polycrystalline thin film materials and devices. Final subcontract report, 16 January 1990--15 January 1993

    SciTech Connect

    Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.; Yokimcus, T.A.

    1993-08-01

    This report describes results and conclusions of the final phase (III) of a three-year research program on polycrystalline thin-film heterojunction solar cells. The research consisted of the investigation of the relationships between processing, materials properties, and device performance. This relationship was quantified by device modeling and analysis. The analysis of thin-film polycrystalline heterojunction solar cells explains how minority-carrier recombination at the metallurgical interface and at grain boundaries can be greatly reduced by the proper doping of the window and absorber layers. Additional analysis and measurements show that the present solar cells are limited by the magnitude of the diode current, which appears to be caused by recombination in the space charge region. Developing an efficient commercial-scale process for fabricating large-area polycrystalline, thin-film solar cells from a research process requires a detailed understanding of the individual steps in making the solar cell, and their relationship to device performance and reliability. The complexities involved in characterizing a process are demonstrated with results from our research program on CuInSe{sub 2}, and CdTe processes.

  12. Dispersion-model-free determination of optical constants: application to materials for organic thin film devices.

    PubMed

    Flämmich, Michael; Danz, Norbert; Michaelis, Dirk; Bräuer, Andreas; Gather, Malte C; Kremer, Jonas H-W M; Meerholz, Klaus

    2009-03-10

    We describe a method to determine the refractive index and extinction coefficient of thin film materials without prior knowledge of the film thickness and without the assumption of a dispersion model. A straightforward back calculation to the optical parameters can be performed starting from simple measurements of reflection and transmission spectra of a 100-250 nm thick supported film. The exact film thickness is found simultaneously by fulfilling the intrinsic demand of continuity of the refractive index as a function of wavelength. If both the layer and the substrate are homogeneous and isotropic media with plane and parallel interfaces, effects like surface roughness, scattering, or thickness inhomogeneities can be neglected. Then, the accuracy of the measurement is approximately 10(-2) and 10(-3) for the refractive index and the extinction coefficient, respectively. The error of the thin film thickness determination is well below 1 nm. Thus this technique is well suited to determine the input parameters for optical simulations of organic thin film devices, such as organic light-emitting diodes (OLEDs) or organic photovoltaic (OPV) cells. We apply the method to the electroluminescent polymer poly(2,5-dioctyl-p-phenylene vinylene) (PDO-PPV) and show its applicability by comparing the measured and calculated reflection and transmission spectra of OLED stacks with up to five layers.

  13. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1991--15 January 1992

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  14. Chemical-bath deposition of ZnSe thin films: Process and material characterization

    SciTech Connect

    Dona, J.M.; Herrero, J.

    1995-03-01

    Chemical-bath deposition of ZnSe thin films from NH{sub 3}/NH{sub 2}-NH{sub 2}/SeC(NH{sub 2}){sub 2}/Na{sub 2}SO{sub 3}/ZnSO{sub 4} solutions has been studied. The effect of various process parameters on the growth and the film quality is presented. A first approach to a mechanistic interpretation of the chemical process, based on the influence of the process parameters on the film growth rate, is reported. The structural, optical, chemical, and electrical properties of the ZnSe thin-films deposited by this method have been studied. The electron diffraction (EDS) analysis shows that the films are microcrystalline with mixed cubic and hexagonal structure. EDS analysis has demonstrated that the films are highly stoichiometric. Scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy studies of the ZnSe thin films deposited by this method show that the films are continuous and homogeneous. Optical measurements have allowed the authors to detect the presence of the spin-orbit splitting effect in this material. Electrical conductivity measurements have shown the highly resistive nature of these films ({rho} {approximately} 10{sup 9} {Omega} cm).

  15. Vacuum thermal switch made of phase transition materials considering thin film and substrate effects

    NASA Astrophysics Data System (ADS)

    Yang, Yue; Basu, Soumyadipta; Wang, Liping

    2015-06-01

    In the present study, we theoretically demonstrate a vacuum thermal switch based on near-field thermal radiation between phase transition materials, i.e., vanadium dioxide (VO2), whose phase changes from insulator to metal at 341 K. Strong coupling of surface phonon polaritons between two insulating VO2 plates significantly enhances the near-field heat flux, which on the other hand is greatly reduced when the VO2 emitter becomes metallic, resulting in strong thermal switching effect. Fluctuational electrodynamics incorporated with anisotropic wave propagation predicts more than 80% heat transfer reduction at sub-30-nm vacuum gaps and 50% at vacuum gap of 1 μm. Furthermore, the penetration depth inside the uniaxial VO2 insulator is studied at the vacuum gap of 50 nm, suggesting the possible impact of reduced VO2 thickness on the near-field thermal radiation with thin-film structures. By replacing the bulk VO2 receiver with a thin film of several tens of nanometers, the switching effect is further improved over a broad range of vacuum gaps from 10 nm to 1 μm. Finally, the effect of SiO2 substrate for the thin-film emitter or receiver is also considered to provide insights for future experimental demonstrations. By controlling heat flow with near-field radiative transport, the proposed vacuum thermal switch would find practical applications for energy dissipation in microelectronic devices and for the realization of thermal circuits.

  16. Atomic/Molecular Layer Deposition of Lithium Terephthalate Thin Films as High Rate Capability Li-Ion Battery Anodes.

    PubMed

    Nisula, Mikko; Karppinen, Maarit

    2016-02-10

    We demonstrate the fabrication of high-quality electrochemically active organic lithium electrode thin films by the currently strongly emerging combined atomic/molecular layer deposition (ALD/MLD) technique using lithium terephthalate, a recently found anode material for lithium-ion battery (LIB), as a proof-of-the-concept material. Our deposition process for Li-terephthalate is shown to well comply with the basic principles of ALD-type growth including the sequential self-saturated surface reactions, a necessity when aiming at micro-LIB devices with three-dimensional architectures. The as-deposited films are found crystalline across the deposition temperature range of 200-280 °C, which is a trait highly desired for an electrode material but rather unusual for hybrid inorganic-organic thin films. Excellent rate capability is ascertained for the Li-terephthalate films with no conductive additives required. The electrode performance can be further enhanced by depositing a thin protective LiPON solid-state electrolyte layer on top of Li-terephthalate; this yields highly stable structures with capacity retention of over 97% after 200 charge/discharge cycles at 3.2 C.

  17. Apparatus and method for treating a cathode material provided on a thin-film substrate

    DOEpatents

    Hanson, Eric J.; Kooyer, Richard L.

    2003-01-01

    An apparatus and method for treating a cathode material provided on a surface of a continuous thin-film substrate and a treated thin-film cathode having increased smoothness are disclosed. A web of untreated cathode material is moved between a feed mechanism and a take-up mechanism, and passed through a treatment station. The web of cathode material typically includes areas having surface defects, such as prominences extending from the surface of the cathode material. The surface of the cathode material is treated with an abrasive material to reduce the height of the prominences so as to increase an 85 degree gloss value of the cathode material surface by at least approximately 10. The web of cathode material may be subjected to a subsequent abrasive treatment at the same or other treatment station. Burnishing or lapping film is employed at a treatment station to process the cathode material. An abrasive roller may alternatively be used to process the web of cathode material. The apparatus and method of the present invention may also be employed to treat the surface of a lithium anode foil so as to cleanse and reduce the roughness of the anode foil surface.

  18. Apparatus and method for treating a cathode material provided on a thin-film substrate

    SciTech Connect

    Hanson, Eric J.; Kooyer, Richard L.

    2001-01-01

    An apparatus and method for treating a cathode material provided on a surface of a continuous thin-film substrate and a treated thin-film cathode having increased smoothness are disclosed. A web of untreated cathode material is moved between a feed mechanism and a take-up mechanism, and passed through a treatment station. The web of cathode material typically includes areas having surface defects, such as prominences extending from the surface of the cathode material. The surface of the cathode material is treated with an abrasive material to reduce the height of the prominences so as to increase an 85 degree gloss value of the cathode material surface by at least approximately 10. The web of cathode material may be subjected to a subsequent abrasive treatment at the same or other treatment station. Burnishing or lapping film is employed at a treatment station to process the cathode material. An abrasive roller may alternatively be used to process the web of cathode material. The apparatus and method of the present invention may also be employed to treat the surface of a lithium anode foil so as to cleanse and reduce the roughness of the anode foil surface.

  19. Thin-film growth and patterning techniques for small molecular organic compounds used in optoelectronic device applications.

    PubMed

    Biswas, Shaurjo; Shalev, Olga; Shtein, Max

    2013-01-01

    Rapid advances in research and development in organic electronics have resulted in many exciting discoveries and applications, including organic light-emitting devices for information display and illumination, solar cells, photodetectors, chemosensors, and logic. Organic optoelectronic materials are broadly classified as polymeric or small molecular. For the latter category, solvent-free deposition techniques are generally preferred to form well-defined interfaces and improve device performance. This article reviews several deposition and patterning methods for small molecular thin films and devices, including organic molecular beam deposition, vacuum thermal evaporation, organic vapor phase deposition, and organic vapor jet printing, and compares them to several other methods that have been proposed recently. We hope this review provides a compact but informative summary of the state of the art in organic device processing and addresses the various techniques' governing physical principles.

  20. 7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors

    NASA Astrophysics Data System (ADS)

    Huang, Jie; Lee, Mingun; Lucero, Antonio T.; Cheng, Lanxia; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    We demonstrate the fabrication of 7-octenytrichlorosilane (7-OTS)/trimethylaluminum (TMA) organic-inorganic hybrid films using molecular-atomic layer deposition (MALD). The properties of 7-OTS/TMA hybrid films are extensively investigated using transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), and electrical measurements. Our results suggest that uniform and smooth amorphous hybrid thin films with excellent insulating properties are obtained using the MALD process. Films have a relatively high dielectric constant of approximately 5.0 and low leakage current density. We fabricate zinc oxide (ZnO) based thin film transistors (TFTs) using 7-OTS/TMA hybrid material as a back gate dielectric with the top ZnO channel layer deposited in-situ via MALD. The ZnO TFTs exhibit a field effect mobility of approximately 0.43 cm2 V-1 s-1, a threshold voltage of approximately 1 V, and an on/off ratio of approximately 103 under low voltage operation (from -3 to 9 V). This work demonstrates an organic-inorganic hybrid gate dielectric material potentially useful in flexible electronics application.

  1. Crystallographic dependence of photocatalytic activity of WO3 thin films prepared by molecular beam epitaxy.

    PubMed

    Li, Guoqiang; Varga, Tamas; Yan, Pengfei; Wang, Zhiguo; Wang, Chongmin; Chambers, Scott A; Du, Yingge

    2015-06-21

    We investigated the impact of crystallographic orientation on the photocatalytic activity of single crystalline WO3 thin films prepared by molecular beam epitaxy on the photodegradation of rhodamine B (RhB). A clear effect is observed, with (111) being the most reactive surface, followed by (110) and (001). Photoreactivity is directly correlated with the surface free energy determined by density functional theory calculations. The RhB photodegradation mechanism is found to involve hydroxyl radicals in solution formed from photo-generated holes and differs from previous studies performed on nanoparticles and composites.

  2. Magnetically engineered smart thin films: toward lab-on-chip ultra-sensitive molecular imaging.

    PubMed

    Hassan, Muhammad A; Saqib, Mudassara; Shaikh, Haseeb; Ahmad, Nasir M; Elaissari, Abdelhamid

    2013-03-01

    Magnetically responsive engineered smart thin films of nanoferrites as contrast agent are employed to develop surface based magnetic resonance imaging to acquire simple yet fast molecular imaging. The work presented here can be of significant potential for future lab-on-chip point-of-care diagnostics from the whole blood pool on almost any substrates to reduce or even prevent clinical studies involve a living organism to enhance the non-invasive imaging to advance the '3Rs' of work in animals-replacement, refinement and reduction.

  3. Porphyrin Molecular Multilayer Thin-Films on Gold (111) Electrodes for Electro-optical Applications

    NASA Astrophysics Data System (ADS)

    Krawicz, Alexandra; Qian, Guoguang; Lewis, Kim; Dinolfo, Peter

    2012-02-01

    We have developed a Layer-by-Layer (LbL) method for the fabrication of thin-film molecular multilayers on gold (111) electrodes. Copper(I) catalyzed azide-alkyne cycloaddition (CuAAC) coupling reactions were used for surface attachment and subsequent LbL deposition of porphyrin building blocks. The electrochemical and photophysical properties of the thin-films can be tuned through synthetic modification of the individual components, resulting in new porphyrin multilayers for applications in light harvesting and molecular electronics. Herein, we demonstrate the reproducible growth trends and optical properties of these films. Multilayer growth was followed by UV-Vis absorption and reflectance spectroscopy. Film thickness (FT) and optical constants were obtained from spectroscopic ellipsometry. Topology and surface roughness was examined by TM-AFM, while the copper content was quantified by XPS. The redox characteristics were studied by electrochemical methods, whereas the conductance of individual porphyrin constructs was examined by STM using the molecular break junction method. The multilayers show consistent linear growth in absorbance and FT over tens of layers and continuity in their molecular structure.

  4. Tunable Affinity and Molecular Architecture Lead to Diverse Self-Assembled Supramolecular Structures in Thin Films

    SciTech Connect

    Hsu, Chin-Hao; Dong, Xuehui; Lin, Zhiwei; Ni, Bo; Lu, Pengatao; Jiang, Zhang; Tian, Ding; Cheng, Stephen Z.D.

    2016-01-01

    The self-assembly behaviors of specifically designed giant surfactants are systematically studied in thin films using grazing incident X-ray and transmission electron microscopy (TEM), focusing on the effects of head surface functionalities and molecular architectures on nanostructure formation. Two molecular nanoparticles (MNPs) with different affinities, i.e., hydrophilic carboxylic acid functionalized [60]fullerene (AC60) and omniphobic fluorinated polyhedral oligomeric silsesquioxane (FPOSS), are utilized as heads of the giant surfactants. By covalently tethering these functional MNPs onto the chain end or the junction point of polystyrene-block-poly(ethylene oxide) (PS-b-PEO) diblock copolymer, linear and star-like giant surfactants possess distinct molecular architectures are constructed. With fixed length of the PEO block, the molecular weight change of the PS block originates the phase formation and transition. Due to the distinct affinity, the AC60-based giant surfactants form two-component morphologies, while three-component morphologies are found in the FPOSS-based ones. A PS block stretching parameter is introduced to characterize the PS chain conformation in different morphologies. The highly diverse self-assembly behaviors and the tunable dimensions in thin films suggest the giant surfactants could be a promising and robust platform for nanolithography applications.

  5. Long-term stability of cellulose acetate butyrate thin films for nuclear certified reference materials.

    PubMed

    Buják, Renáta; Delva, Laurens; Erkoç, Mustafa; Bauwens, Jeroen; Jakopič, Rožle; Vincze, Laszlo; Aregbe, Yetunde; Cardon, Ludwig

    2017-01-01

    Characterization of cellulose acetate butyrate (CAB) thin films with 17, 35 and 52 wt% butyryl is carried out to select the most suitable matrix material for the U and Pu containing large-sized dried spike reference material. The virgin CAB samples were aged by vibrations, heat, humidity, UV light and X-rays. Characterization was done by thermo-analytical techniques, gel permeation chromatography, mechanical tests and via Rayleigh and Compton scattering. The results show that CAB with lower butyryl content can withstand higher operational temperatures and has greater mechanical strength while CAB with higher butyryl content seems to be more resistant to radiation.

  6. Modeling of laser ablation processes for thin film deposition of materials^

    NASA Astrophysics Data System (ADS)

    Leboeuf, Jean-Noel G.

    1996-05-01

    The laser ablation technique for pulsed laser deposition of thin films has proven extremely successful at growing high-quality films of very complex and novel materials, such as high temperature superconducting compounds and diamond-like carbon. The physics ingredients involved are quite complicated given that they include laser-solid interactions at the target, plasma formation off the target, vapor/plasma plume transport towards the deposition substrate, and plume-solid interactions at the substrate. A global physics and computational approach to the laser ablation process has been taken which relies on thermal models to describe laser-solid interactions; on kinetic models of plasma formation in the ablated plume; on an assorted variety of hydrodynamic, gas dynamic and collisional models of plume transport in near vacuum and in a higher pressure background gas; and on molecular dynamics methods to treat plume-substrate interactions. We have chosen to concentrate mostly on silicon to validate our models against experiments. The application of our physics results does however go beyond silicon, given the universality of many experimental observations, such as plume splitting for instance, for a wide variety of laser-ablated materials, be it carbon, copper, yttrium or YBCO. ^* In collaboration with K. R. Chen, J. M. Donato, D. B. Geohegan, C. L. Liu, A. A. Puretzky and R. F. Wood, Oak Ridge National Laboratory, Oak Ridge, TN 37831-8071 ^ Work supported by Oak Ridge National Laboratory Directed Research and Development (LDRD) Fund under U.S Department of Energy contract No. DE-AC05-96OR22464 with Lockheed Martin Energy Systems, Inc.

  7. Optical thin film devices

    NASA Astrophysics Data System (ADS)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  8. Development of Layered Multiscale Porous Thin Films by Tuning Deposition Time and Molecular Weight of Polyelectrolytes.

    PubMed

    Yu, Jing; Sanyal, Oishi; Izbicki, Andrew P; Lee, Ilsoon

    2015-09-01

    This work focuses on the design of porous polymeric films with nano- and micro-sized pores existing in distinct zones. The porous thin films are fabricated by the post-treatment of layer-by-layer assembled poly(allylamine hydrochloride) (PAH)/poly(acrylic acid) (PAA) multilayers. In order to improve the processing efficiency, the deposition time is shortened to ≈ 10 s. It is found that fine porous structures can be created even by significantly reducing the processing time. The effect of using polyelectrolytes with widely different molecular weights is also studied. The pore size is increased by using high molecular weight PAH, while high molecular weight PAA minimizes the pore size to nanometer scale. Having gained a precise control over the pore size, layered multiscale porous thin films are further built up with either a microsized porous zone on top of a nanosized porous zone or vice versa. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Alternative nano-structured thin-film materials used as durable thermal nanoimprint lithography templates.

    PubMed

    Bossard, M; Boussey, J; Le Drogoff, B; Chaker, M

    2016-02-19

    Nanoimprint templates made of diamond-like carbon (DLC) and amorphous silicon carbide (SiC) thin films and fluorine-doped associated materials, i.e. F-DLC and F-SiC were investigated in the context of thermal nanoimprint lithography (NIL) with respect to their release properties. Their performances in terms of durability and stability were evaluated and compared to those of conventional silicon or silica molds coated with antisticking molecules applied as a self-assembled monolayer. Plasma-enhanced chemical vapor deposition parameters were firstly tuned to optimize mechanical and structural properties of the DLC and SiC thin films. The impact of the amount of fluorine dopant on the deposited thin films properties was then analyzed. A comparative analysis of DLC, F-DLC as well as SiC and F-SiC molds was then carried out over multiple imprints, performed into poly (methyl methacrylate) (PMMA) thermo-plastic resist. The release properties of un-patterned films were evaluated by the measurement of demolding energies and surface energies, associated with a systematic analysis of the mold surface contamination. These analyses showed that the developed materials behave as intrinsically easy-demolding and contamination-free molds over series of up to 40 imprints. To our knowledge, it is the first time that such a large number of imprints has been considered within an exhaustive comparative study of materials for NIL. Finally, the developed materials went through standard e-beam lithography and plasma etching processes to obtain nanoscale-patterned templates. The replicas of those patterned molds, imprinted into PMMA, were shown to be of high fidelity and good stability after several imprints.

  10. Phase sensitive molecular dynamics of self-assembly glycolipid thin films: A dielectric spectroscopy investigation

    NASA Astrophysics Data System (ADS)

    Velayutham, T. S.; Ng, B. K.; Gan, W. C.; Majid, W. H. Abd.; Hashim, R.; Zahid, N. I.; Chaiprapa, Jitrin

    2014-08-01

    Glycolipid, found commonly in membranes, is also a liquid crystal material which can self-assemble without the presence of a solvent. Here, the dielectric and conductivity properties of three synthetic glycolipid thin films in different thermotropic liquid crystal phases were investigated over a frequency and temperature range of (10-2-106 Hz) and (303-463 K), respectively. The observed relaxation processes distinguish between the different phases (smectic A, columnar/hexagonal, and bicontinuous cubic Q) and the glycolipid molecular structures. Large dielectric responses were observed in the columnar and bicontinuous cubic phases of the longer branched alkyl chain glycolipids. Glycolipids with the shortest branched alkyl chain experience the most restricted self-assembly dynamic process over the broad temperature range studied compared to the longer ones. A high frequency dielectric absorption (Process I) was observed in all samples. This is related to the dynamics of the hydrogen bond network from the sugar group. An additional low-frequency mechanism (Process II) with a large dielectric strength was observed due to the internal dynamics of the self-assembly organization. Phase sensitive domain heterogeneity in the bicontinuous cubic phase was related to the diffusion of charge carriers. The microscopic features of charge hopping were modelled using the random walk scheme, and two charge carrier hopping lengths were estimated for two glycolipid systems. For Process I, the hopping length is comparable to the hydrogen bond and is related to the dynamics of the hydrogen bond network. Additionally, that for Process II is comparable to the bilayer spacing, hence confirming that this low-frequency mechanism is associated with the internal dynamics within the phase.

  11. Electrically controllable molecular spin crossover switching in Fe(phen)2 (NCS)2 thin film

    NASA Astrophysics Data System (ADS)

    Mondal, Chaitali; Mandal, Swapan K.

    2016-10-01

    Spin crossover molecular complex Fe(phen)2(NCS)2 in thin film form (20-300 nm) is obtained by simple dip-coating technique on glass substrates. The growth of the molecular films is confirmed by optical and X-ray diffraction data. The morphology of the samples shows distributed nanocrystals with an average size ca. 12 nm. We measure the current (I)-voltage (V) characteristics of a device with 300 nm film thickness and show that application of electric field can induce spin state switching. The electric field experienced by individual nanocrystals separated by nanometric gap is supposed to be quite high and is plausibly playing the crucial role in instigating switching in molecular nanocrystals. The result is quite significant towards developing room temperature molecular spin cross-over switching devices in the nanoscale limit.

  12. Preface: Special Topic on Dynamics of Polymer Materials in Thin Films and Related Geometries

    NASA Astrophysics Data System (ADS)

    Ediger, M. D.; Schweizer, Kenneth S.

    2017-05-01

    The last twenty years have seen a substantial effort to understand relaxation, mechanics, diffusion, and the glass transition in thin polymer films and related geometries. Recent progress in this field is highlighted in this special issue of The Journal of Chemical Physics on "Dynamics of Polymer Materials in Thin Films and Related Geometries." With the goal of providing an entry point to these 35 papers for those not working in this field, we provide some background and perspective in this introduction to the special topic section.

  13. Preface: Special Topic on Dynamics of Polymer Materials in Thin Films and Related Geometries.

    PubMed

    Ediger, M D; Schweizer, Kenneth S

    2017-05-28

    The last twenty years have seen a substantial effort to understand relaxation, mechanics, diffusion, and the glass transition in thin polymer films and related geometries. Recent progress in this field is highlighted in this special issue of The Journal of Chemical Physics on "Dynamics of Polymer Materials in Thin Films and Related Geometries." With the goal of providing an entry point to these 35 papers for those not working in this field, we provide some background and perspective in this introduction to the special topic section.

  14. Fundamental Studies of the Mechanical Behavior of Microelectronic Thin Film Materials

    DTIC Science & Technology

    1991-01-01

    Si I-xGex Strained Layers (D.B.Noble) ................................................ 55 I. Oral Presentations Resulting from AFOSR Grants No. 89-0185...120 8 7 0 100 6 4 60 80 , E 60 0 F. ac sorption D - 21 - A desorption ( Vih ) Q 1 I - I - - a- 1 -10 0 10 20 30 40 annealing time (min) Fig. 8 D...III. ORAL PRESENTATIONS RESULTING FROM AFOSR GRANTS NO. 86- 0051 AND 86-0051 1. W.DhjX, "Mechanical Properties of Microelectronic Thin Film Materials

  15. Growth of SrVO{sub 3} thin films by hybrid molecular beam epitaxy

    SciTech Connect

    Eaton, Craig; Brahlek, Matthew; Engel-Herbert, Roman; Moyer, Jarrett A.; Alipour, Hamideh M.; Grimley, Everett D.; LeBeau, James M.

    2015-11-15

    The authors report the growth of stoichiometric SrVO{sub 3} thin films on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO{sub 3} films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes in the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO{sub 3} thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique.

  16. Velocity measurements of inert porous materials driven by infrared-laser-ablated thin-film titanium

    SciTech Connect

    Bedeaux, Brett C.; Trott, Wayne M.; Castaneda, Jaime N.

    2010-02-15

    This article presents and interprets a series of experiments performed to measure the velocity of four inert low-density porous materials that were accelerated by an ablated thin-film titanium metal, created by vaporizing a 250-nm-thick layer of titanium with a high-energy, Q-switched, pulsed, and 1.054 {mu}m neodymium-glass laser. Inert powder materials were chosen to match, among other characteristics, the morphology of energetic materials under consideration for use in detonator applications. The observed behavior occurs near the thin-film titanium ablation layer, through complex physical mechanisms, including laser absorption in the metal layer, ablation and formation of confined plasma that is a blackbody absorber of the remaining photon energy, and vaporization of the remaining titanium metal. One-dimensional hydrodynamic modeling provided a basis of comparison with the measured velocities. We found, as predicted in wave-propagation-code modeling, that an Asay foil can indicate total momentum of the driven material that is mechanically softer (lower in shock impedance) than the foil. The key conclusion is that the specific impulse delivered by the laser transfers a corresponding momentum to soft, organic power columns that are readily compacted. Impulse from the laser is less efficient in transferring momentum to hard inorganic particles that are less readily compacted.

  17. Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity.

    PubMed

    Guse, Joanna A; Jones, Timothy W; Danos, Andrew; McCamey, Dane R

    2017-03-06

    A method for investigating recombination dynamics of photo-induced charge carriers in thin film semiconductors, specifically in photovoltaic materials such as organo-lead halide perovskites is presented. The perovskite film thickness and absorption coefficient are initially characterized by profilometry and UV-VIS absorption spectroscopy. Calibration of both laser power and cavity sensitivity is described in detail. A protocol for performing Flash-photolysis Time Resolved Microwave Conductivity (TRMC) experiments, a non-contact method of determining the conductivity of a material, is presented. A process for identifying the real and imaginary components of the complex conductivity by performing TRMC as a function of microwave frequency is given. Charge carrier dynamics are determined under different excitation regimes (including both power and wavelength). Techniques for distinguishing between direct and trap-mediated decay processes are presented and discussed. Results are modelled and interpreted with reference to a general kinetic model of photoinduced charge carriers in a semiconductor. The techniques described are applicable to a wide range of optoelectronic materials, including organic and inorganic photovoltaic materials, nanoparticles, and conducting/semiconducting thin films.

  18. Multi-Material Front Contact for 19% Thin Film Solar Cells.

    PubMed

    van Deelen, Joop; Tezsevin, Yasemin; Barink, Marco

    2016-02-06

    The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,Ga)Se₂ (CIGS), CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO) sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

  19. [Spectral emissivity of thin films].

    PubMed

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  20. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  1. Biomimetic thin film synthesis

    SciTech Connect

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  2. Pulsed Laser-Induced Effects in the Material Properties of Tungsten Thin Films

    NASA Astrophysics Data System (ADS)

    Evans, R.; Camacho-López, S.; Camacho-López, M. A.; Sánchez-Pérez, C.; Esparza-García, A.

    2007-04-01

    In this work we present evidence of photo-induced effects on crystalline Tungsten (W) films. A frequency doubled Nd:YAG (5ns) laser was used in our experiments. The W thin films were deposited on silicon substrates by the DC-sputtering technique using W (Lesker, 99.95% purity) targets in an argon atmosphere. The crystalline phase of the deposited W films was determined by X-ray diffraction. Our experimental results show clear evidence that several events take place as a consequence of exposure of the W films to the laser nanosecond pulses. One of those events has a chemical effect that results in a significant degree of oxidation of the film; a second event affects the structural nature of the initial W material, resulting into a material phase change; and a third event changes the initially homogeneous morphology of the film into an unexpected porous material film. As it has been confirmed by the experiments, all of these effects are laser fluence dependent. A full post exposure analysis of the W thin films included Energy Dispersive Spectrometry to determine the degree of oxidation of the W film; a micro-Raman system was used to explore and to study the transition of the crystalline W to the amorphous-crystalline WO3 phase; further analysis with Scanning Electron Microscopy showed a definite laser-induced porosity which changes the initial homogeneous film into a highly porous film with small features in the range from 100 to 300 nm.

  3. Multifunctional thin film surface

    DOEpatents

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  4. Thin film growth of CaFe2As2 by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

    2016-01-01

    Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

  5. Surface molecular aggregation structure and surface physicochemical properties of poly(fluoroalkyl acrylate) thin films

    NASA Astrophysics Data System (ADS)

    Honda, K.; Yamaguchi, H.; Kobayashi, M.; Morita, M.; Takahara, A.

    2008-03-01

    Effect of side chain length on the molecular aggregation states and surface properties of poly(fluoroalkyl acrylate)s [PFA-Cy, where y is fluoromethylene number in Rf group] thin films were systematically investigated. Spin-coated PFA-Cy thin films were characterized by static and dynamic contact angle measurements, X-ray photoelectron spectroscopy (XPS), and grazing- incidence X-ray diffraction (GIXD). The receding contact angles showed small values for PFA-Cy with short side chain (y<=6) and increased above y>=8. GIXD revealed that fluoroalkyl side chain of PFA-Cy with y>=8 was crystallized and formed ordered structures at the surface region as well as bulk one. These results suggest that water repellent mechanism of PFA-Cy can be attributed to the presence of highly ordered fluoroalkyl side chains at the outermost surfaces. The results of XPS in the dry and hydrated states and contact angle measurement in water support the mechanism of lowering contact angle for water by exposure of carbonyl group to the water interface through reorientation of short fluoroalkyl chains. The surface nanotextured PFA-C8 through imprinting of anodic aluminum oxide mold showed extremely high hydrophobicity as well as high oleophobicity.

  6. Temperature stabilized effusion cell evaporation source for thin film deposition and molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tiedje, H. F.; Brodie, D. E.

    2000-05-01

    A simple effusion cell evaporation source for thin film deposition and molecular-beam epitaxy is described. The source consists of a crucible with a thermocouple temperature sensor heated by a resistive crucible heater. Radiation heat transfer from the crucible to the thermocouple produces a consistent and reproducible thermocouple temperature for a given crucible temperature, without direct contact between the thermocouple and the crucible. The thermocouple temperature is somewhat less than the actual crucible temperature because of heat flow from the thermocouple junction along the thermocouple lead wires. In a typical case, the thermocouple temperature is 1007 °C while the crucible is at 1083 °C. The crucible temperature stability is estimated from the measured sensitivity of the evaporation rate of indium to temperature, and the observed variations in the evaporation rate for a fixed thermocouple temperature. The crucible temperature peak-to-peak variation over a one hour period is 1.2 °C. Machined molybdenum crucibles were used in the indium and copper sources for depositing CuInSe2 thin films for solar cells.

  7. An investigation of material properties and tribological performance of magnetron sputtered thin film coatings

    NASA Astrophysics Data System (ADS)

    Singh, Harpal

    This dissertation is divided into two categories based upon lubrication functionality and its application. The categories are: Dry film lubrication and Fluid film lubrication with thin film coatings. Thin film coatings examined in this work were deposited using closed field unbalanced magnetron sputtering and RF-DC coupled magnetron sputtering systems. In Dry/Solid film lubrication, the mechanical, structural and tribological properties of two Molybdenum disulphide (MoS2) based coatings are examined and evaluated. Among the two coatings, one coating is doped with Ti (Ti-MoS2) and the other is a combination of metal, lubricant and oxide (Sb2O3/Au - MoS2). These coatings are known to provide low friction in vacuum environments. The goal of this work was to evaluate friction and wear performance of MoS2 doped coatings in unidirectional and reciprocating sliding contact under different environmental conditions. Sliding contact results showed friction and wear dependence on temperature and humidity. The formation and removal of transfer films and the recrystallization and reorientation of basal layers on the steel counterface was observed as the mechanism for low friction. Structural analysis revealed a relationship between the microstructural properties and tribological performance. It was also observed that the addition of dopants (Ti, Au, Sb 2O3) improved the mechanical properties as compared to pure MoS2 coatings. Further, the rolling contact performance of the coatings was measured on a five ball on rod tribometer and a Thrust bearing tribometer under vacuum and air environments. The rolling contact experiments indicated that life of the rolling components depend on the amount of material present between the contacts. Fluid film lubrication with thin film coatings investigates the possibilities to improve the performance and durability of tribological components when oils and thin films are synergistically coupled. In this work, the ability of a Diamond Like Carbon

  8. Fine-Tunable Absorption of Uniformly Aligned Polyurea Thin Films for Optical Filters Using Sequentially Self-Limited Molecular Layer Deposition.

    PubMed

    Park, Yi-Seul; Choi, Sung-Eun; Kim, Hyein; Lee, Jin Seok

    2016-05-11

    Development of methods enabling the preparation of uniformly aligned polymer thin films at the molecular level is a prerequisite for realizing their optoelectronic characteristics as innovative materials; however, these methods often involve a compromise between scalability and accuracy. In this study, we have grown uniformly aligned polyurea thin films on a SiO2 substrate using molecular layer deposition (MLD) based on sequential and self-limiting surface reactions. By integrating plane-polarized Fourier-transform infrared, Raman spectroscopic tools, and density functional theory calculations, we demonstrated the uniform alignment of polyurea MLD films. Furthermore, the selective-wavelength absorption characteristics of thickness-controlled MLD films were investigated by integrating optical measurements and finite-difference time-domain simulations of reflection spectra, resulting from their thickness-dependent fine resonance with photons, which could be used as color filters in optoelectronics.

  9. Initial Study on Thin Film Preparation of Carbon Nanodots Composites as Luminescence Material

    NASA Astrophysics Data System (ADS)

    Iskandar, F.; Aimon, A. H.; Akmaluddin, A. R.; Nuryadin, B. W.; Abdullah, M.

    2016-08-01

    Nowadays, the developments of phosphors materials require elements without noble metals and simple production process. Carbon nanodots (C-dots) are one of phosphor materials with wide range of emission band, and high biocompatibility. In this research thin film carbon nanodots composite have been prepared by spin coating method. Prior deposition, powder carbon nanodots were synthesized from a mixture of commercial urea as the nitrogen sources and citric acid as a carbon source by using hydrothermal and microwave-assisted heating method. The prepared powder was dispersed in transparent epoxy resin and then coated on glass substrate. The photoluminescence result for sample with 0.035 g citric acid exhibited an intense, single, homogeneous and broad spectrum with yellowish emission upon excitation at 365 nm. The Fourier Transform Infrared Spectroscopy (FTIR) result showed the existences of C=C, C-H, C=O, N-H and O-H functional groups which confirmed the quality of the sample. Further, based on UV-Vis measurement, the prepared thin film was highly transparent (transmittance 90%) with estimated film thickness around 764 nm. This result may open an opportunity for optoelectronic devices.

  10. Development of Nb and Alternative Material Thin Films Tailored for SRF Applications

    SciTech Connect

    Valente-Feliciano, A -M; Reece, C E; Spradlin, J K; Xiao, B; Zhao, X; Gu, Diefeng; Baumgart, Helmut; Beringer, Douglas; Lukaszew, Rosa; Seo, Kang

    2011-09-01

    Over the years, Nb/Cu technology, despite its shortcomings due to the commonly used magnetron sputtering, has positioned itself as an alternative route for the future of superconducting structures used in accelerators. Recently, significant progress has been made in the development of energetic vacuum deposition techniques, showing promise for the production of thin films tailored for SRF applications. JLab is pursuing energetic condensation deposition via techniques such as Electron Cyclotron Resonance and High Power Impulse Magnetron Sputtering. As part of this project, the influence of the deposition energy on the material and RF properties of the Nb thin film is investigated with the characterization of their surface, structure, superconducting properties and RF response. It has been shown that the film RRR can be tuned from single digits to values greater than 400. This paper presents results on surface impedance measurements correlated with surface and material characterization for Nb films produced on various substrates, monocrystalline and polycrystalline as well as amorphous. A progress report on work on NbTiN and AlN based multilayer structures will also be presented.

  11. Molecular doping for control of gate bias stress in organic thin film transistors

    NASA Astrophysics Data System (ADS)

    Hein, Moritz P.; Zakhidov, Alexander A.; Lüssem, Björn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K.; Leo, Karl

    2014-01-01

    The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

  12. Molecular Weight Effects on the Glass Transition and Confinement Behavior of Polymer Thin Films.

    PubMed

    Xia, Wenjie; Hsu, David D; Keten, Sinan

    2015-08-01

    Nanoscale polymer thin films exhibit strong confinement effects on Tg arising from free surfaces. However, the coupled influence of molecular weight (MW) and surface effects on Tg is not well understood for low MW film systems below the entanglement length. Utilizing atomistically informed coarse-grained molecular dynamics simulations for poly(methyl methacrylate) (PMMA), it is demonstrated that the decrease in free-standing film Tg with respect to bulk is more significant for low MW compared to high MW systems. Investigation of the local interfacial properties reveals that the increase in the local free volume near the free surface is greater for low MW, explaining the MW dependence of Tg -confinement behaviors. These findings corroborate recent experiments on low MW films, and highlight the relationship between nanoconfinement phenomena and local free volume effects arising from free surfaces. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Structural Evolution of Low-Molecular-Weight Poly(ethylene oxide)-block-polystyrene Diblock Copolymer Thin Film

    PubMed Central

    Huang, Xiaohua

    2013-01-01

    The structural evolution of low-molecular-weight poly(ethylene oxide)-block-polystyrene (PEO-b-PS) diblock copolymer thin film with various initial film thicknesses on silicon substrate under thermal annealing was investigated by atomic force microscopy, optical microscopy, and contact angle measurement. At film thickness below half of the interlamellar spacing of the diblock copolymer (6.2 nm), the entire silicon is covered by a polymer brush with PEO blocks anchored on the Si substrate due to the substrate-induced effect. When the film is thicker than 6.2 nm, a dense polymer brush which is equal to half of an interlamellar layer was formed on the silicon, while the excess material dewet this layer to form droplets. The droplet surface was rich with PS block and the PEO block crystallized inside the bigger droplet to form spherulite. PMID:24302862

  14. Structural evolution of low-molecular-weight poly(ethylene oxide)-block-polystyrene diblock copolymer thin film.

    PubMed

    Wu, Hui; Huang, Xiaohua

    2013-01-01

    The structural evolution of low-molecular-weight poly(ethylene oxide)-block-polystyrene (PEO-b-PS) diblock copolymer thin film with various initial film thicknesses on silicon substrate under thermal annealing was investigated by atomic force microscopy, optical microscopy, and contact angle measurement. At film thickness below half of the interlamellar spacing of the diblock copolymer (6.2 nm), the entire silicon is covered by a polymer brush with PEO blocks anchored on the Si substrate due to the substrate-induced effect. When the film is thicker than 6.2 nm, a dense polymer brush which is equal to half of an interlamellar layer was formed on the silicon, while the excess material dewet this layer to form droplets. The droplet surface was rich with PS block and the PEO block crystallized inside the bigger droplet to form spherulite.

  15. Aluminum thin film enhanced IR nanosecond laser-induced frontside etching of transparent materials

    NASA Astrophysics Data System (ADS)

    Nieto, Daniel; Cambronero, Ferran; Flores-Arias, María Teresa; Farid, Nazar; O'Connor, Gerard M.

    2017-01-01

    Laser processing of glass is of significant commercial interest for microfabrication of precision optical engineering devices. In this work, a laser ablation enhancement mechanism for microstructuring of glass materials is presented. The method consists of depositing a thin film of aluminum on the front surface of the glass material to be etched. The laser beam modifies the glass material by being incident on this front-side. The influence of ablation fluence in the nanosecond regime, in combination with the deposition of the aluminum layer of various thicknesses, is investigated by determining the ablation threshold for different glass materials including soda-lime, borosilicate, fused silica and sapphire. Experiments are performed using single laser pulse per shot in an air environment. The best enhancement in terms of threshold fluence reduction is obtained for a 16 nm thick aluminum layer where a reduction of two orders of magnitude in the ablation threshold fluence is observed for all the glass samples investigated in this work.

  16. Thin film tritium dosimetry

    DOEpatents

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  17. Thin film mechanics

    NASA Astrophysics Data System (ADS)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  18. Holographic image generation with a thin-film resonance caused by chalcogenide phase-change material

    PubMed Central

    Lee, Seung-Yeol; Kim, Yong-Hae; Cho, Seong-M.; Kim, Gi Heon; Kim, Tae-Youb; Ryu, Hojun; Kim, Han Na; Kang, Han Byeol; Hwang, Chi-Young; Hwang, Chi-Sun

    2017-01-01

    The development of digital holography is anticipated for the viewing of 3D images by reconstructing both the amplitude and phase information of the object. Compared to analog holograms written by a laser interference, digital hologram technology has the potential to realize a moving 3D image using a spatial light modulator. However, to ensure a high-resolution 3D image with a large viewing angle, the hologram panel requires a near-wavelength scale pixel pitch with a sufficient large numbers of pixels. In this manuscript, we demonstrate a digital hologram panel based on a chalcogenide phase-change material (PCM) which has a pixel pitch of 1 μm and a panel size of 1.6 × 1.6 cm2. A thin film of PCM encapsulated by dielectric layers can be used for the hologram panel by means of excimer laser lithography. By tuning the thicknesses of upper and lower dielectric layers, a color-selective diffraction panel is demonstrated since a thin film resonance caused by dielectric can affect to the absorption and diffraction spectrum of the proposed hologram panel. We also show reflection color of a small active region (1 μm × 4 μm) made by ultra-thin PCM layer can be electrically changed. PMID:28117346

  19. Holographic image generation with a thin-film resonance caused by chalcogenide phase-change material.

    PubMed

    Lee, Seung-Yeol; Kim, Yong-Hae; Cho, Seong-M; Kim, Gi Heon; Kim, Tae-Youb; Ryu, Hojun; Kim, Han Na; Kang, Han Byeol; Hwang, Chi-Young; Hwang, Chi-Sun

    2017-01-24

    The development of digital holography is anticipated for the viewing of 3D images by reconstructing both the amplitude and phase information of the object. Compared to analog holograms written by a laser interference, digital hologram technology has the potential to realize a moving 3D image using a spatial light modulator. However, to ensure a high-resolution 3D image with a large viewing angle, the hologram panel requires a near-wavelength scale pixel pitch with a sufficient large numbers of pixels. In this manuscript, we demonstrate a digital hologram panel based on a chalcogenide phase-change material (PCM) which has a pixel pitch of 1 μm and a panel size of 1.6 × 1.6 cm(2). A thin film of PCM encapsulated by dielectric layers can be used for the hologram panel by means of excimer laser lithography. By tuning the thicknesses of upper and lower dielectric layers, a color-selective diffraction panel is demonstrated since a thin film resonance caused by dielectric can affect to the absorption and diffraction spectrum of the proposed hologram panel. We also show reflection color of a small active region (1 μm × 4 μm) made by ultra-thin PCM layer can be electrically changed.

  20. Holographic image generation with a thin-film resonance caused by chalcogenide phase-change material

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Yeol; Kim, Yong-Hae; Cho, Seong-M.; Kim, Gi Heon; Kim, Tae-Youb; Ryu, Hojun; Kim, Han Na; Kang, Han Byeol; Hwang, Chi-Young; Hwang, Chi-Sun

    2017-01-01

    The development of digital holography is anticipated for the viewing of 3D images by reconstructing both the amplitude and phase information of the object. Compared to analog holograms written by a laser interference, digital hologram technology has the potential to realize a moving 3D image using a spatial light modulator. However, to ensure a high-resolution 3D image with a large viewing angle, the hologram panel requires a near-wavelength scale pixel pitch with a sufficient large numbers of pixels. In this manuscript, we demonstrate a digital hologram panel based on a chalcogenide phase-change material (PCM) which has a pixel pitch of 1 μm and a panel size of 1.6 × 1.6 cm2. A thin film of PCM encapsulated by dielectric layers can be used for the hologram panel by means of excimer laser lithography. By tuning the thicknesses of upper and lower dielectric layers, a color-selective diffraction panel is demonstrated since a thin film resonance caused by dielectric can affect to the absorption and diffraction spectrum of the proposed hologram panel. We also show reflection color of a small active region (1 μm × 4 μm) made by ultra-thin PCM layer can be electrically changed.

  1. Element-Doped Polyacrylic Acid Thin Films as SIMS Standards for Organic Materials

    NASA Astrophysics Data System (ADS)

    Davisson, M.; Phinney, D. L.; Weber, P. K.

    2009-12-01

    To constrain relative sensitive factors for SIMS elemental analysis of organic materials, calibration standards are being developed by coordinating ppm quantities of Group I, Group II, and transition metals with polyacrylic acid resin and depositing them as thin films. Each element is prepared as an aqueous acetate, oxalate, or nitrate solution to avoid unwanted elements that compromise thin film uniformity or produce interfering masses. These are subsequently mixed proportionally with reagent grade resins (Mw ~2000 and ~50,000), and dried passively on an Al bullet or spin-coated for thin layering (~100nm). Initial results using an O- primary beam on a Cameca NanoSIMS demonstrate excellent lateral homogeneity for Na, K, Fe, Co, and Cd at nanometer scale and consistent ratios to 12C (stdev <10%) over multiple 10um raster areas, whereas Mg, Ca, Sr, and Cu show variable ratios to 12C over sputter depth (stdev >10%). Depth profiling over the entire film thickness using a Cameca 3f show high reproducibility of element trends at 250um raster areas. Additional measurements will incorporate multi-element suites of biologically-relevant species (e.g. Na, K, Ca, P) to facilitate quantitative analysis of sensitivity factors with compositional changes.

  2. Solar Selective Coatings Prepared From Thin-Film Molecular Mixtures and Evaluated

    NASA Technical Reports Server (NTRS)

    Jaworske, Don A.

    2003-01-01

    Thin films composed of molecular mixtures of metal and dielectric are being considered for use as solar selective coatings for a variety of space power applications. By controlling molecular mixing during ion-beam sputter deposition, researchers can tailor the solar selective coatings to have the combined properties of high solar absorptance and low infrared emittance. On orbit, these combined properties simultaneously maximize the amount of solar energy captured by the coating and minimize the amount of thermal energy radiated. The solar selective coatings are envisioned for use on minisatellites, for applications where solar energy is used to power heat engines or to heat remote regions in the interior of the spacecraft. Such systems may be useful for various missions, particularly those to middle Earth orbit. Sunlight must be concentrated by a factor of 100 or more to achieve the desired heat inlet operating temperature. At lower concentration factors, the temperature of the heat inlet surface of the heat engine is too low for efficient operation, and at high concentration factors, cavity type heat receivers become attractive. The an artist's concept of a heat engine, with the annular heat absorbing surface near the focus of the concentrator coated with a solar selective coating is shown. In this artist's concept, the heat absorbing surface powers a small Stirling convertor. The astronaut's gloved hand is provided for scale. Several thin-film molecular mixtures have been prepared and evaluated to date, including mixtures of aluminum and aluminum oxide, nickel and aluminum oxide, titanium and aluminum oxide, and platinum and aluminum oxide. For example, a 2400- Angstrom thick mixture of titanium and aluminum oxide was found to have a solar absorptance of 0.93 and an infrared emittance of 0.06. On the basis of tests performed under flowing nitrogen at temperatures as high as 680 C, the coating appeared to be durable at elevated temperatures. Additional durability

  3. Re-orientation transition in molecular thin films: Potts model with dipolar interaction.

    PubMed

    Hoang, Danh-Tai; Kasperski, Maciej; Puszkarski, Henryk; Diep, H T

    2013-02-06

    We study the low-temperature behavior and the phase transition of a thin film by Monte Carlo simulation. The thin film has a simple cubic lattice structure where each site is occupied by a Potts parameter which indicates the molecular orientation of the site. We take only three molecular orientations in this paper, which correspond to the three-state Potts model. The Hamiltonian of the system includes (i) the exchange interaction J(ij) between nearest-neighbor sites i and j, (ii) the long-range dipolar interaction of amplitude D truncated at a cutoff distance r(c), and (iii) a single-ion perpendicular anisotropy of amplitude A. We allow J(ij) = J(s) between surface spins, and J(ij) = J otherwise. We show that the ground state depends on the ratio D/A and r(c). For a single layer, for a given A, there is a critical value D(c) below (above) which the ground-state (GS) configuration of molecular axes is perpendicular (parallel) to the film surface. When the temperature T is increased, a re-orientation transition occurs near D(c): the low-T in-plane ordering undergoes a transition to the perpendicular ordering at a finite T, below the transition to the paramagnetic phase. The same phenomenon is observed in the case of a film with a thickness. Comparison with the Fe/Gd experiment is given. We show that the surface phase transition can occur below or above the bulk transition depending on the ratio J(s)/J. Surface and bulk order parameters as well as other physical quantities are shown and discussed.

  4. Effects of sapphire annealing on the structural properties of AIN thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liu, Yun; Zhang, Jia

    2010-03-01

    The effects of sapphire annealing on high-quality AlN growth by molecular beam epitaxy have been studied. AlN thin films grown on annealed sapphire (1200 °C, 12 h) were hole-free. The full width at half maximum of the (0 0 0 2) and (1 0 1bar 5)ω-rocking curves for 260 nm-thick AlN thin films grown on annealed sapphires were 200 and 900 arcsec, respectively. The substantial improvement of AlN quality is ascribed to reduction of dislocation density by sapphire annealing.

  5. Behavior of optical thin-film materials and coatings under proton and gamma irradiation.

    PubMed

    Di Sarcina, Ilaria; Grilli, Maria Luisa; Menchini, Francesca; Piegari, Angela; Scaglione, Salvatore; Sytchkova, Anna; Zola, Danilo

    2014-02-01

    Optical materials and coatings are exposed to the flux of energetic particles when used in either space applications or nuclear energy plants. The study of their behavior in such an environment is important to avoid failure of the optical components during their operation. The optical performance of several thin-film materials ((HfO2, Ta2O5, Nb2O5, TiO2, SiO2) and coatings, under irradiation with high-dose gamma rays (5.8 MGy) and exposure to low-energy (60 keV) protons, has been investigated. Some variations of optical properties have been detected in silicon oxide after irradiation, while the other materials are stable in such conditions.

  6. Nanostructured thin film-based near-infrared tunable perfect absorber using phase-change material

    NASA Astrophysics Data System (ADS)

    Kocer, Hasan

    2015-01-01

    Nanostructured thin film absorbers embedded with phase-change thermochromic material can provide a large level of absorption tunability in the near-infrared region. Vanadium dioxide was employed as the phase-change material in the designed structures. The optical absorption properties of the designed structures with respect to the geometric and material parameters were systematically investigated using finite-difference time-domain computations. Absorption level of the resonance wavelength in the near-IR region was tuned from the perfect absorption level to a low level (17%) with a high positive dynamic range of near-infrared absorption intensity tunability (83%). Due to the phase transition of vanadium dioxide, the resonance at the near-infrared region is being turned on and turned off actively and reversibly under the thermal bias, thereby rendering these nanostructures suitable for infrared camouflage, emitters, and sensors.

  7. Monotonic and cyclic testing of thin film materials for MEMS applications

    NASA Astrophysics Data System (ADS)

    Cornella, Guido

    MicroElectroMechanical Systems (MEMS) are a class of miniaturized devices comprising sensors and actuators. Mechanically loaded components of MEMS structures, such as bridges or springs, are subjected to repeated loading at strains which are sometimes large. The cyclic behavior of these parts may ultimately limit product lifetime. Knowledge of the mechanical properties of thin film materials subjected to such loading is thus crucial for determining materials-related opportunities and limitations in design of current and future devices. We have developed a micromachining process to fabricate free-standing thin film beam specimens for uniaxial stress-strain testing to simulate micromachined RF switch operation. The process is sufficiently versatile that test samples from any patternable thin film can be produced. Microbeams of gage length 500 mum, width 50 mum, and various thicknesses have been fabricated from aluminum and iridium thin films. A micromechanical testing system driven by a piezoelectic actuator has been designed and built for uniaxial, monotonic and cyclic testing of thin film samples. Load resolution for the test equipment was 0.4 mN and displacement accuracy was 8 nm. The data (time, load, displacement) were acquired with LabVIEW software. Aluminum and iridium microbeam samples of thicknesses of 1, 2, 4, and 8 mum and 0.35 mum respectively, have been uniaxially tested under various monotonic and cyclic loading conditions. A TEM sample preparation technique for investigating microstructural changes due to micromechanical. testing has also been developed. After testing, samples were removed from the testing equipment without imposing additional strain. Thus, the dislocation structure established during testing was locked-in and subsequently observed using TEM. Monotonic testing of aluminum samples has shown strain rate dependent moduli. Micromechanical as well as microstructural test data confirms the hypothesis of the existence of a strain rate

  8. Method for measurement of the density of thin films of small organic molecules

    SciTech Connect

    Xiang Haifeng; Xu Zongxiang; Roy, V. A. L.; Che Chiming; Lai, P. T.

    2007-03-15

    An accurate and sensitive method is reported to measure the thin-film density of vacuum-deposited, small-molecular organic semiconductor materials. A spectrophotometer and surface profiler had been used to determine the mass and thickness of organic thin film, respectively. The calculated density of tris-(8-hydroxyquinolato) aluminum (Alq{sub 3}) thin film was 1.31{+-}0.01 g/cm{sup 3}. Vacuum pressures and thin-film growth rates are found to have less impact on the thin-film density of organic material. However, the thin-film density of organic material strongly depends on its chemical structure and molecular weight. Specifically, the chemical structure determines the density of organic material that affects the molecular volume and intermolecular stacking.

  9. Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy.

    PubMed

    Gu, Yi; Wang, Kai; Zhou, Haifei; Li, Yaoyao; Cao, Chunfang; Zhang, Liyao; Zhang, Yonggang; Gong, Qian; Wang, Shumin

    2014-01-13

    InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi < 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.

  10. Atomic dynamics in molecular dynamics simulations of glassy CuTi thin films

    NASA Astrophysics Data System (ADS)

    Vauth, Sebastian; Mayr, S. G.

    2005-02-01

    We present results on atomic dynamics in metallic glass thin films below the glass transition temperature using molecular dynamics simulations. Thin CuTi films of different compositions are prepared by quenching the liquid to an amorphous state. The atomic dynamics on the amorphous surface and inside the bulk of the samples are quantitatively compared by calculating diffusion constants and jump length distributions. Here, we focus on the collective or single particle character of the diffusion mechanism in dependence of the atom type. In addition, single atom exemplifications are analyzed for the different kinds of atomic dynamics. We find that Cu surface atoms diffuse with a single atom jump dynamics, whereas inside the bulk collective behavior dominates for both species.

  11. Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular Passivation

    SciTech Connect

    Rajachidambaram, Meena Suhanya; Pandey, Archana; Vilayur Ganapathy, Subramanian; Nachimuthu, Ponnusamy; Thevuthasan, Suntharampillai; Herman, Gregory S.

    2013-10-21

    The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFT) have been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid (n-HPA) when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.

  12. Molecular orientation and anisotropic carrier mobility in poorly soluble polythiophene thin films

    NASA Astrophysics Data System (ADS)

    Hosokawa, Yuki; Misaki, Masahiro; Yamamoto, Satoshi; Torii, Masafumi; Ishida, Kenji; Ueda, Yasukiyo

    2012-05-01

    Oriented thin films of a poorly soluble polythiophene, poly[benzo[1,2-d:4,5-d']bisthiazole-2,6-diyl(3',4,4″,4″'-tetradodecyl[2,2':5',2″:5″,2″'-quaterthiophene]-5,5″'-diyl)], were fabricated using the friction-transfer technique. The detail of the film structure was investigated using polarized UV-vis spectroscopy, transmission electron microscopy, and grazing-incidence x-ray diffraction observations. The friction-transfer technique enables control of the anisotropic carrier transport according to the face-on and/or edge-on molecular orientations in films with one-directionally aligned polymer backbones.

  13. Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liu, B.; Gao, J.; Wu, K. M.; Liu, C.

    2009-05-01

    AlN films were grown at 785 ∘C on (0001) sapphire substrates by radio-frequency assisted molecular beam epitaxy. Post-growth rapid thermal annealing (RTA) was carried out from 900 to 1200 ∘C for 10 s in flowing N 2. The morphological and structural properties of the AlN epilayers before and after the RTA were studied by atomic force microscopy, x-ray diffraction and transmission electron microscopy. It is found that the threading dislocations can be decreased to an order of magnitude by using an interlayer growth method. The surface roughness (RMS) of the AlN thin films becomes larger with the increase of annealing temperature. The full width at half maximum of AlN (0002) rocking curve reaches its minimum after the RTA at 1000 ∘C.

  14. Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

    SciTech Connect

    Liang Cai; Gooneratne, Chinthaka; Cha, Dongkyu; Chen Long; Kosel, Jurgen; Gianchandani, Yogesh

    2012-12-01

    Metglas{sup TM} 2826MB foils of 25-30 {mu}m thickness with the composition of Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18} have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of {approx}3 {mu}m thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum (Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magnetic properties of FeNi is also observed as the Mo dopant level increases. The coercivity of FeNi films doped with Mo decreases to a value less than one third of the value without dopant. Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropy properties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The film material that is fabricated using an optimized process is magnetically as soft as amorphous Metglas{sup TM} 2826MB with a coercivity of less than 40 Am{sup -1}. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin film materials on their magnetic properties.

  15. Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

    NASA Astrophysics Data System (ADS)

    Liang, Cai; Gooneratne, Chinthaka; Cha, Dongkyu; Chen, Long; Gianchandani, Yogesh; Kosel, Jurgen

    2012-12-01

    MetglasTM 2826MB foils of 25-30 μm thickness with the composition of Fe40Ni38Mo4B18 have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of ˜3 μm thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum (Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magnetic properties of FeNi is also observed as the Mo dopant level increases. The coercivity of FeNi films doped with Mo decreases to a value less than one third of the value without dopant. Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropy properties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The film material that is fabricated using an optimized process is magnetically as soft as amorphous MetglasTM 2826MB with a coercivity of less than 40 Am-1. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin film materials on their magnetic properties.

  16. Material dependence of anomalous Nernst effect in perpendicularly magnetized ordered-alloy thin films

    NASA Astrophysics Data System (ADS)

    Hasegawa, K.; Mizuguchi, M.; Sakuraba, Y.; Kamada, T.; Kojima, T.; Kubota, T.; Mizukami, S.; Miyazaki, T.; Takanashi, K.

    2015-06-01

    Material dependence of the anomalous Nernst effect (ANE) in perpendicularly magnetized ordered-alloy thin films is systematically investigated. The ANE was found to have a tendency to increase simply as uniaxial magnetic anisotropy increased at room temperature. The ANE increases as temperature increases from 10 to 300 K for all the materials. However, the signs of the ANE in Fe-based ordered-alloys (L10-FePt and L10-FePd) and in a Co/Ni multilayer are opposite to those in Mn-based ordered-alloys (L10-MnGa and D022-Mn2Ga). Ordered-alloys with larger uniaxial magnetic anisotropies reveal larger ANE and might be desirable for thermoelectric applications.

  17. Fabrication of hybrid thin film structures from HTS and CMR materials

    NASA Astrophysics Data System (ADS)

    Sojková, M.; Štrbík, V.; Nurgaliev, T.; Chromik, Š.; Dobročka, E.; Španková, M.; Blagoev, B.; Gál, N.

    2016-03-01

    We present the preparation of bilayers from high-temperature superconductors (HTS) and half-metallic ferromagnetic (FM) manganite with a colossal magnetoresistance (CMR). We used YBa2Cu3O7-x (YBCO) and Tl2Ba2CaCu2O8 (TBCCO) thin films as a HTS material and La0.67Sr0.33MnO3 (LSMO) film as a CMR material. In the case of YBCO/LSMO, we prepared FM/HTS heterostructure for studying the spin-polarized current injection effect on the electrical properties of the YBCO strip in dc or low-frequency regimes and on the microwave characteristics of the strip. For the first time, we report the preparation of a TBCCO/LSMO bilayer. In some applications, the TBCCO offers better parameters (higher working temperature, lower surface resistance, lower 1/f noise) than YBCO.

  18. Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

    NASA Astrophysics Data System (ADS)

    Zhang, Yong-Hui; Mei, Zeng-Xia; Liang, Hui-Li; Du, Xiao-Long

    2017-04-01

    Flexible and transparent electronics enters into a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc. Zinc oxide (ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices, owing to their high electrical performances, together with low processing temperatures and good optical transparencies. In this paper, we review recent advances in flexible and transparent thin-film transistors (TFTs) based on ZnO and relevant materials. After a brief introduction, the main progress of the preparation of each component (substrate, electrodes, channel and dielectrics) is summarized and discussed. Then, the effect of mechanical bending on electrical performance is highlighted. Finally, we suggest the challenges and opportunities in future investigations. Project supported by the National Natural Science Foundation of China (Grants Nos. 61306011, 11274366, 51272280, 11674405, and 11675280).

  19. Magnetic properties of low-moment ferrimagnetic Heusler Cr 2 CoGa thin films grown by molecular beam epitaxy

    SciTech Connect

    Jamer, Michelle E.; Sterbinsky, George E.; Stephen, Gregory M.; DeCapua, Matthew C.; Player, Gabriel; Heiman, Don

    2016-10-31

    Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure; however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with superconducting quantum interface device magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity component with an activation energy of 87 meV. These results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.

  20. Molecular dynamics simulation of Cu/Au thin films under temperature gradient

    NASA Astrophysics Data System (ADS)

    Li, Qibin; Peng, Xianghe; Peng, Tiefeng; Tang, Qizhong; Zhang, Xiaomin; Huang, Cheng

    2015-12-01

    Three modulation period thin films, 1.8 nm Cu/3.6 nm Au, 2.7 nm Cu/2.7 nm Au and 3.6 nm Cu/1.8 nm Au, are obtained from deposition method and ideal modeling based on lattice constant, to examine their structures and thermophysical characteristics under temperature gradient. The coherent lattice interface is found both at deposit and ideal thin films after annealing. Also, the vacancies are observed clearly in the deposit thin films. The defect and component of thin films will influence the energy transportation in the coatings. The vacancies and lattice mismatch can enlarge the mobility of atoms and result in the failure of coating under the thermal stress. The power spectrum of atoms' movement has no apparent rule for phonon transportation in thin films. The results are helpful to reveal the micro-mechanism and provide reasonable basis for the failure of metallic coatings.

  1. Study on Buckling of Stiff Thin Films on Soft Substrates as Functional Materials

    NASA Astrophysics Data System (ADS)

    Ma, Teng

    In engineering, buckling is mechanical instability of walls or columns under compression and usually is a problem that engineers try to prevent. In everyday life buckles (wrinkles) on different substrates are ubiquitous -- from human skin to a rotten apple they are a commonly observed phenomenon. It seems that buckles with macroscopic wavelengths are not technologically useful; over the past decade or so, however, thanks to the widespread availability of soft polymers and silicone materials micro-buckles with wavelengths in submicron to micron scale have received increasing attention because it is useful for generating well-ordered periodic microstructures spontaneously without conventional lithographic techniques. This thesis investigates the buckling behavior of thin stiff films on soft polymeric substrates and explores a variety of applications, ranging from optical gratings, optical masks, energy harvest to energy storage. A laser scanning technique is proposed to detect micro-strain induced by thermomechanical loads and a periodic buckling microstructure is employed as a diffraction grating with broad wavelength tunability, which is spontaneously generated from a metallic thin film on polymer substrates. A mechanical strategy is also presented for quantitatively buckling nanoribbons of piezoelectric material on polymer substrates involving the combined use of lithographically patterning surface adhesion sites and transfer printing technique. The precisely engineered buckling configurations provide a route to energy harvesters with extremely high levels of stretchability. This stiff-thin-film/polymer hybrid structure is further employed into electrochemical field to circumvent the electrochemically-driven stress issue in silicon-anode-based lithium ion batteries. It shows that the initial flat silicon-nanoribbon-anode on a polymer substrate tends to buckle to mitigate the lithiation-induced stress so as to avoid the pulverization of silicon anode. Spontaneously

  2. XPS and UPS Studies of Thin Film PV Materials Modified by Reactions in Liquids

    SciTech Connect

    Perkins, C. L.; Hasoon, F. S.; Al-Thani, H. A.; Asher, S. E.

    2005-01-01

    Water-based processing steps are ubiquitous in the semiconductor industry, and the field of photovoltaics (PV) is no exception. During chemical bath deposition (CBD) of CdS, complex chemical reactions occurring at surfaces and in solution are poorly understood, yet have been shown to have powerful effects on the performance in terms of reliability and efficiency of finished PV devices. In the past, electron spectroscopic studies of these reactions have been hampered by the conflicting requirements of ultra-high vacuum and exposure of samples to liquid water. In this paper we present initial results from a new tool at NREL that allows one to conduct atmospheric pressure, liquid phase chemical processes on thin film PV materials and subsequent examination via core and valence level electron spectroscopies without exposing samples to air contamination.

  3. Investigations on bactericidal properties of molybdenum-tungsten oxides combinatorial thin film material libraries.

    PubMed

    Mardare, Cezarina Cela; Hassel, Achim Walter

    2014-11-10

    A combinatorial thin film material library from the molybdenum-tungsten refractory metals oxides system was prepared by thermal coevaporation, and its structural and morphological properties were investigated after a multiple step heat treatment. A mixture of crystalline and amorphous oxides and suboxides was obtained, as well as surface structuring caused by the enrichment of molybdenum oxides in large grains. It was found that the oxide phases and the surface morphology change as a function of the compositional gradient. Tests of the library antimicrobial activity against E. coli were performed and the antimicrobial activity was proven in some defined compositional ranges. A mechanism for explaining the observed activity is proposed, involving a collective contribution from (i) increased local acidity due to the enrichment in large grains of molybdenum oxides with different stoichiometry and (ii) the release of free radicals from the W18O49 phase under visible light.

  4. High-throughput characterization of stresses in thin film materials libraries using Si cantilever array wafers and digital holographic microscopy.

    PubMed

    Lai, Y W; Hamann, S; Ehmann, M; Ludwig, A

    2011-06-01

    We report the development of an advanced high-throughput stress characterization method for thin film materials libraries sputter-deposited on micro-machined cantilever arrays consisting of around 1500 cantilevers on 4-inch silicon-on-insulator wafers. A low-cost custom-designed digital holographic microscope (DHM) is employed to simultaneously monitor the thin film thickness, the surface topography and the curvature of each of the cantilevers before and after deposition. The variation in stress state across the thin film materials library is then calculated by Stoney's equation based on the obtained radii of curvature of the cantilevers and film thicknesses. DHM with nanometer-scale out-of-plane resolution allows stress measurements in a wide range, at least from several MPa to several GPa. By using an automatic x-y translation stage, the local stresses within a 4-inch materials library are mapped with high accuracy within 10 min. The speed of measurement is greatly improved compared with the prior laser scanning approach that needs more than an hour of measuring time. A high-throughput stress measurement of an as-deposited Fe-Pd-W materials library was evaluated for demonstration. The fast characterization method is expected to accelerate the development of (functional) thin films, e.g., (magnetic) shape memory materials, whose functionality is greatly stress dependent.

  5. High-throughput characterization of stresses in thin film materials libraries using Si cantilever array wafers and digital holographic microscopy

    NASA Astrophysics Data System (ADS)

    Lai, Y. W.; Hamann, S.; Ehmann, M.; Ludwig, A.

    2011-06-01

    We report the development of an advanced high-throughput stress characterization method for thin film materials libraries sputter-deposited on micro-machined cantilever arrays consisting of around 1500 cantilevers on 4-inch silicon-on-insulator wafers. A low-cost custom-designed digital holographic microscope (DHM) is employed to simultaneously monitor the thin film thickness, the surface topography and the curvature of each of the cantilevers before and after deposition. The variation in stress state across the thin film materials library is then calculated by Stoney's equation based on the obtained radii of curvature of the cantilevers and film thicknesses. DHM with nanometer-scale out-of-plane resolution allows stress measurements in a wide range, at least from several MPa to several GPa. By using an automatic x-y translation stage, the local stresses within a 4-inch materials library are mapped with high accuracy within 10 min. The speed of measurement is greatly improved compared with the prior laser scanning approach that needs more than an hour of measuring time. A high-throughput stress measurement of an as-deposited Fe-Pd-W materials library was evaluated for demonstration. The fast characterization method is expected to accelerate the development of (functional) thin films, e.g., (magnetic) shape memory materials, whose functionality is greatly stress dependent.

  6. High-throughput characterization of stresses in thin film materials libraries using Si cantilever array wafers and digital holographic microscopy

    SciTech Connect

    Lai, Y. W.; Ludwig, A.; Hamann, S.; Ehmann, M.

    2011-06-15

    We report the development of an advanced high-throughput stress characterization method for thin film materials libraries sputter-deposited on micro-machined cantilever arrays consisting of around 1500 cantilevers on 4-inch silicon-on-insulator wafers. A low-cost custom-designed digital holographic microscope (DHM) is employed to simultaneously monitor the thin film thickness, the surface topography and the curvature of each of the cantilevers before and after deposition. The variation in stress state across the thin film materials library is then calculated by Stoney's equation based on the obtained radii of curvature of the cantilevers and film thicknesses. DHM with nanometer-scale out-of-plane resolution allows stress measurements in a wide range, at least from several MPa to several GPa. By using an automatic x-y translation stage, the local stresses within a 4-inch materials library are mapped with high accuracy within 10 min. The speed of measurement is greatly improved compared with the prior laser scanning approach that needs more than an hour of measuring time. A high-throughput stress measurement of an as-deposited Fe-Pd-W materials library was evaluated for demonstration. The fast characterization method is expected to accelerate the development of (functional) thin films, e.g., (magnetic) shape memory materials, whose functionality is greatly stress dependent.

  7. Analysis and optimization of thin film photovoltaic materials and device fabrication by real time spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Li, Jian; Stoke, Jason A.; Podraza, Nikolas J.; Sainju, Deepak; Parikh, Anuja; Cao, Xinmin; Khatri, Himal; Barreau, Nicolas; Marsillac, Sylvain; Deng, Xunming; Collins, Robert W.

    2007-09-01

    Methods of spectroscopic ellipsometry (SE) have been applied to investigate the growth and properties of the material components used in the three major thin film photovoltaics technologies: (1) hydrogenated silicon (Si:H); (2) cadmium telluride (CdTe); and (3) copper indium-gallium diselenide (CuIn 1-xGa xSe2 or CIGS). In Si:H technology, real time SE (RTSE) has been applied to establish deposition phase diagrams that describe very high frequency (vhf) plasmaenhanced chemical vapor deposition (PECVD) processes for hydrogenated silicon (Si:H) and silicon-germanium alloy (Si 1-xGe x:H) thin films. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si 1-xGe x:H component solar cells of multijunction devices are obtained when the i-layers are prepared under maximal H II dilution conditions. In CdTe technology, the magnetron sputter deposition of polycrystalline CdTe, CdS, and CdTe 1-xS x thin films as well as the formation of CdS/CdTe and CdTe/CdS heterojunctions has been studied. The nucleation and growth behaviors of CdTe and CdS show strong variations with deposition temperature, and this influences the ultimate grain size. The dielectric functions ɛ of the CdTe 1-xS x alloys have been deduced in order to set up a database for real time investigation of inter-diffusion at the CdS/CdTe and CdTe/CdS interfaces. In CIGS technology, strong variations in ɛ of the Mo back contact during sputter deposition have been observed, and these results have been understood applying a Drude relaxation time that varies with the Mo film thickness. Ex-situ SE measurements of a novel In IIS 3 window layer have shown critical point structures at 2.77+/-0.08 eV, 4.92+/-0.005 eV, and 5.64+/-0.005 eV, as well as an absorption tail with an onset near 1.9 eV. Simulations of solar cell performance comparing In IIS 3 and the conventional CdS have revealed similar quantum efficiencies, suggesting the possibility of a Cd-free window layer in CIGS technology.

  8. Thin-film semiconductor perspective of organometal trihalide perovskite materials for high-efficiency solar cells

    SciTech Connect

    Xiao, Zhengguo; Yuan, Yongbo; Wang, Qi; Shao, Yuchuan; Bai, Yang; Deng, Yehao; Dong, Qingfeng; Hu, Miao; Bi, Cheng; Huang, Jinsong

    2016-02-19

    Organolead trihalide perovskites (OTPs) are arising as a new generation of low-cost active materials for solar cells with efficiency rocketing from 3.5% to over 20% within only five years. From “dye” in dye sensitized solar cells to “hole conductors” and “electron conductors” in mesoscopic heterojunction solar cells, there has been a dramatic conceptual evolution on the function of OTPs in photovoltaic devices. OTPs were originally used as dyes in Gratzel cells, achieving a high efficiency above 15% which, however, did not manifest the excellent charge transport properties of OTPs. An analogy of OTPs to traditional semiconductors was drawn after the demonstration of highly efficient planar heterojunction structure OTP devices and the observation of their excellent bipolar transport properties with a large diffusion length exceeding 100 nm in CH3NH3PbI3 (MAPbI3) polycrystalline thin films. Here, this review aims to provide the most recent advances in the understanding of the origin of the high OTP device efficiency. Specifically we will focus on reviewing the progress in understanding 1) the characterization of fantastic optoelectronic property of OTPs, 2) the unusual defect physics that originate the optoelectronic property; 3) morphology control of the perovskite film from fabrication process and film post-treatment, and 4) device interface and charge transport layers that dramatically impact device efficiency in the OTP thin film devices; 5) photocurrent hysteresis; 6) tandem solar cells; 7) stability of the perovskite materials and solar cell devices.

  9. Thin-film semiconductor perspective of organometal trihalide perovskite materials for high-efficiency solar cells

    DOE PAGES

    Xiao, Zhengguo; Yuan, Yongbo; Wang, Qi; ...

    2016-02-19

    Organolead trihalide perovskites (OTPs) are arising as a new generation of low-cost active materials for solar cells with efficiency rocketing from 3.5% to over 20% within only five years. From “dye” in dye sensitized solar cells to “hole conductors” and “electron conductors” in mesoscopic heterojunction solar cells, there has been a dramatic conceptual evolution on the function of OTPs in photovoltaic devices. OTPs were originally used as dyes in Gratzel cells, achieving a high efficiency above 15% which, however, did not manifest the excellent charge transport properties of OTPs. An analogy of OTPs to traditional semiconductors was drawn after themore » demonstration of highly efficient planar heterojunction structure OTP devices and the observation of their excellent bipolar transport properties with a large diffusion length exceeding 100 nm in CH3NH3PbI3 (MAPbI3) polycrystalline thin films. Here, this review aims to provide the most recent advances in the understanding of the origin of the high OTP device efficiency. Specifically we will focus on reviewing the progress in understanding 1) the characterization of fantastic optoelectronic property of OTPs, 2) the unusual defect physics that originate the optoelectronic property; 3) morphology control of the perovskite film from fabrication process and film post-treatment, and 4) device interface and charge transport layers that dramatically impact device efficiency in the OTP thin film devices; 5) photocurrent hysteresis; 6) tandem solar cells; 7) stability of the perovskite materials and solar cell devices.« less

  10. In-situ TEM - a tool for quantitative observations of deformation behavior in thin films and nano-structured materials

    SciTech Connect

    Stach, E.A.

    2001-09-04

    This paper highlights future developments in the field of in-situ transmission electron microscopy, as applied specifically to the issues of deformation in thin films and nanostructured materials. Emphasis is place on the forthcoming technical advances that will aid in extraction of improved quantitative experimental data using this technique.

  11. Materials-based control of ultrafast relaxation in ferromagnetic thin films

    NASA Astrophysics Data System (ADS)

    Cheng, Lili

    As data rates in magnetic information storage approach 1GHz and above, strategies to control the magnetization dynamics in films become a more pressing need. Materials-based techniques to control relaxation can offer a straightforward implementation for this purpose. Strategies to both increase and decrease the damping constant in ferromagnetic thin films are described in this thesis. By doping rare earth elements, both damping constant and precessional frequency of Ni81Fe19 (Permalloy) can be widely tuned. Sm, Tb, Dy, and Ho all contribute to damping in Ni81Fe19, among which the contribution of relaxation rate from Ho (1.9GHz/%) is the most, which is four times of that from Tb. The increased damping correlates well to the magnetic states of the rare earths. One element, Eu, does not contribute to damping, but it boosts the precessional frequency over a large range (>500 MHz) in Ni 81Fe19. Fe has the lowest damping constant of all elemental ferromagnets. We demonstrate that by doping V into pure Fe, the damping constant can be further reduced. High quality MgO(100)/Fe1-xV x epitaxial thin films are deposited by UHV deposition, with the 35 GHz FMR linewidth (42 Oe) of MgO(100)/Fe film even smaller than the narrowest linewidth of Fe ever reported. As V is doped in, Gilbert damping G decreases. The minimum G value observed is only 14% of that of undoped Fe film, and is even only 34% of the lowest G value ever reported on metallic ferromagnets. The decrease in the Gilbert damping G is closely related to the reduced magnetic anisotropy in the system. The results of this thesis will help advance the understanding of the damping mechanisms in ferromagnets and provide more freedom in engineering the GHz response of the magnetoelectronic devices.

  12. Lipoate-based imprinted self-assembled molecular thin films for biosensor applications.

    PubMed

    Tappura, Kirsi; Vikholm-Lundin, Inger; Albers, Willem M

    2007-01-15

    Lipoate derivatives were used for the formation of imprinted self-assembled molecular thin films for the recognition of morphine. A large collection of lipoate derivatives was screened by molecular dynamics simulations in various solvents. A set of ligands showing favourable interactions with morphine in aqueous environment was selected for synthesis. Morphine-imprinted layers were then produced on gold substrates in mixed monolayers with morphine added as the template. The binding of ligands and morphine to gold, as well as the association/dissociation of morphine to the formed layers were studied with Surface Plasmon Resonance. Imprinted factors were highly variable and were dependent on ligand/morphine mixing ratio, lipoate derivative and monolayer preparation method. The imprinted factors were as high as 100 and 600 for one of the ligands. The results show that the simulations are able to provide correct information of the relative strengths of the molecular interactions between the ligand and morphine molecules in different solutions. The liquid phase simulations are, however, not able to predict the imprinted factors (i.e. distinguish between specific and non-specific binding), because the specificity is not formed before self-assembly on the surface.

  13. Photochemical functionalization of gallium nitride thin films with molecular and biomolecular layers.

    PubMed

    Kim, Heesuk; Colavita, Paula E; Metz, Kevin M; Nichols, Beth M; Sun, Bin; Uhlrich, John; Wang, Xiaoyu; Kuech, Thomas F; Hamers, Robert J

    2006-09-12

    We demonstrate that photochemical functionalization can be used to functionalize and photopattern the surface of gallium nitride crystalline thin films with well-defined molecular and biomolecular layers. GaN(0001) surfaces exposed to a hydrogen plasma will react with organic molecules bearing an alkene (C=C) group when illuminated with 254 nm light. Using a bifunctional molecule with an alkene group at one end and a protected amine group at the other, this process can be used to link the alkene group to the surface, leaving the protected amine exposed. Using a simple contact mask, we demonstrate the ability to directly pattern the spatial distribution of these protected amine groups on the surface with a lateral resolution of <12 mum. After deprotection of the amines, single-stranded DNA oligonucleotides were linked to the surface using a bifunctional cross-linker. Measurements using fluorescently labeled complementary and noncomplementary sequences show that the DNA-modified GaN surfaces exhibit excellent selectivity, while repeated cycles of hybridization and denaturation in urea show good stability. These results demonstrate that photochemical functionalization can be used as an attractive starting point for interfacing molecular and biomolecular systems with GaN and other compound semiconductors.

  14. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Skarlinski, Michael D.; Quesnel, David J.

    2015-12-01

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu2O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films

  15. Supramolecular Scaffold for Tailoring the Two-Dimensional Assembly of Functional Molecular Units into Organic Thin Films.

    PubMed

    Leung, Franco King-Chi; Ishiwari, Fumitaka; Kajitani, Takashi; Shoji, Yoshiaki; Hikima, Takaaki; Takata, Masaki; Saeki, Akinori; Seki, Shu; Yamada, Yoichi M A; Fukushima, Takanori

    2016-09-14

    Tailoring structurally anisotropic molecular assemblies while controlling their orientation on solid substrates is an important subject for advanced technologies that use organic thin films. Here we report a supramolecular scaffold based on tripodal triptycene assemblies, which enables functional molecular units to assemble into a highly oriented, multilayered two-dimensional (2D) structure on solid substrates. The triptycene building block carries an ethynyl group and three flexible side chains at the 10- and 1,8,13-positions, respectively. These bridgehead-substituted tripodal triptycenes self-assembled on solid substrates to form a well-defined "2D hexagonal + 1D lamellar" structure, which developed parallel to the surface of the substrates. Remarkably, the assembling properties of the triptycene building blocks, particularly for a derivative with tri(oxyethylene)-containing side chains, were not impaired when the alkyne terminal was functionalized with a large molecular unit such as C60, which is comparable in diameter to the triptycene framework. Consequently, thin films with a multilayered 2D assembly of the C60 unit were obtained. Flash-photolysis time-resolved microwave conductivity (FP-TRMC) measurements revealed that the C60 film exhibits highly anisotropic charge-transport properties. Bridgehead-substituted tripodal triptycenes may provide a versatile supramolecular scaffold for tailoring the 2D assembly of molecular units into a highly oriented thin film, and in turn for exploiting the full potential of anisotropic molecular functions.

  16. Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics.

    PubMed

    Sangwan, Vinod K; Ortiz, Rocio Ponce; Alaboson, Justice M P; Emery, Jonathan D; Bedzyk, Michael J; Lauhon, Lincoln J; Marks, Tobin J; Hersam, Mark C

    2012-08-28

    In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm(2)/(V s)), subthreshold swing (150 mV/decade), and on/off ratio (5 × 10(5)), while also achieving hysteresis-free operation in ambient conditions.

  17. Eco-Friendly and Biodegradable Biopolymer Chitosan/Y₂O₃ Composite Materials in Flexible Organic Thin-Film Transistors.

    PubMed

    Du, Bo-Wei; Hu, Shao-Ying; Singh, Ranjodh; Tsai, Tsung-Tso; Lin, Ching-Chang; Ko, Fu-Hsiang

    2017-09-03

    The waste from semiconductor manufacturing processes causes serious pollution to the environment. In this work, a non-toxic material was developed under room temperature conditions for the fabrication of green electronics. Flexible organic thin-film transistors (OTFTs) on plastic substrates are increasingly in demand due to their high visible transmission and small size for use as displays and wearable devices. This work investigates and analyzes the structured formation of aqueous solutions of the non-toxic and biodegradable biopolymer, chitosan, blended with high-k-value, non-toxic, and biocompatible Y₂O₃ nanoparticles. Chitosan thin films blended with Y₂O₃ nanoparticles were adopted as the gate dielectric thin film in OTFTs, and an improvement in the dielectric properties and pinholes was observed. Meanwhile, the on/off current ratio was increased by 100 times, and a low leakage current was observed. In general, the blended chitosan/Y₂O₃ thin films used as the gate dielectric of OTFTs are non-toxic, environmentally friendly, and operate at low voltages. These OTFTs can be used on surfaces with different curvature radii because of their flexibility.

  18. The influence of space charge regions on effective charge carrier lifetime in thin films and resulting opportunities for materials characterization

    NASA Astrophysics Data System (ADS)

    Leendertz, C.; Teodoreanu, A.-M.; Korte, L.; Rech, B.

    2013-01-01

    The analysis of injection-dependent charge carrier lifetimes is a well-established method to determine material and interface quality in crystalline silicon wafer-based device structures such as solar cells. However, for thin films, this method has rarely been used. One reason is that the physical interpretation of experimental data must rely on advanced theoretical models. In this study, we show by numerical simulations and analytical approximations that the effective charge carrier lifetime in thin films is heavily affected by space charge regions (SCR) over a wide range of injection levels. By analysis of the characteristic features in the injection-dependent effective charge carrier lifetime curves, qualitative information about SCRs that occur at grain boundaries or interfaces can be obtained. In contrast, information about the defect density can only be extracted in a very limited range of injection levels and the relationship between effective charge carrier lifetime and the quasi-Fermi level splitting, which is limiting the open circuit voltage of wafer-based solar cells, is not valid in thin films. On the basis of this theoretical study, we analyze measurements of effective charge carrier lifetime in 1.5 μm thin and 2 μm fine-grained polycrystalline silicon films with lifetimes of up to 100 μs and find experimental evidence for grain boundary potential barriers. Finally, we present guidelines for optimized photoconductance measurements and the evaluation of charge carrier lifetimes in thin films, in general.

  19. Angle-resolved photoemission spectroscopy of strontium lanthanum copper oxide thin films grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Harter, John Wallace

    Among the multitude of known cuprate material families and associated structures, the archetype is "infinite-layer" ACuO2, where perfectly square and flat CuO2 planes are separated by layers of alkaline earth atoms. The infinite-layer structure is free of magnetic rare earth ions, oxygen chains, orthorhombic distortions, incommensurate superstructures, ordered vacancies, and other complications that abound among the other material families. Furthermore, it is the only cuprate that can be made superconducting by both electron and hole doping, making it a potential platform for decoding the complex many-body interactions responsible for high-temperature superconductivity. Research on the infinite-layer compound has been severely hindered by the inability to synthesize bulk single crystals, but recent progress has led to high-quality superconducting thin film samples. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized Sr1-chiLa chiCuO2 thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of other cuprate parent compounds. As carriers are added to the system, a continuous evolution from Mott insulator to superconducting metal is observed as a coherent low-energy band develops on top of a concomitant remnant lower Hubbard band, gradually filling in the Mott gap. For chi = 0.10, our results reveal a strong coupling between electrons and (pi,pi) anti-ferromagnetism, inducing a Fermi surface reconstruction that pushes the nodal states below the Fermi level and realizing nodeless superconductivity. Electron diffraction measurements indicate the presence of a surface reconstruction that is consistent with the polar nature of Sr1-chiLachiCuO2. Most knowledge about the electron-doped side of the cuprate phase diagram has been deduced by generalizing from a single material family, Re2-chi CechiCuO4, where robust antiferromagnetism has been observed past chi

  20. RESEARCH ON THE ELECTRONIC AND OPTICAL PROPERTIES OF POLYMER AND OTHER ORGANIC MOLECULAR THIN FILMS

    SciTech Connect

    ALEXEI G. VITUKHNOVSKY; IGOR I. SOBELMAN - RUSSIAN ACADEMY OF SCIENCES

    1995-09-06

    Optical properties of highly ordered films of poly(p-phenylene) (PPP) on different substrates, thin films of mixtures of conjugated polymers, of fullerene and its composition with polymers, molecular J-aggregates of cyanine dyes in frozen matrices have been studied within the framework of the Agreement. Procedures of preparation of high-quality vacuum deposited PPP films on different substrates (ITO, Si, GaAs and etc.) were developed. Using time-correlated single photon counting technique and fluorescence spectroscopy the high quality of PPP films has been confirmed. Dependence of structure and optical properties on the conditions of preparation were investigated. The fluorescence lifetime and spectra of highly oriented vacuum deposited PPP films were studied as a function of the degree of polymerization. It was shown for the first time that the maximum fluorescence quantum yield is achieved for the chain length approximately equal to 35 monomer units. The selective excitation of luminescence of thin films of PPP was performed in the temperature range from 5 to 300 K. The total intensity of luminescence monotonically decreases with decreasing temperature. Conditions of preparation of highly cristallyne fullerene C{sub 60} films by the method of vacuum deposition were found. Composites of C{sub 60} with conjugated polymers PPV and polyacetylene (PA) were prepared. The results on fluorescence quenching, IR and resonant Raman spectroscopy are consistent with earlier reported ultrafast photoinduced electron transfer from PPV to C{sub 60} and show that the electron transfer is absent in the case of the PA-C{sub 60} composition. Strong quenching of PPV fluorescence was observed in the PPV-PA blends. The electron transfer from PPV to PA can be considered as one of the possible mechanisms of this quenching. The dynamics of photoexcitations in different types of J-aggregates of the carbocyanine dye was studied at different temperatures in frozen matrices. The optical

  1. Two-Dimensional Van der Waals Materials for Thin Film Transistor Applications

    NASA Astrophysics Data System (ADS)

    George, Aaron Scott

    Research on two-dimensional nanomaterials has become a topic of considerable interest since the pioneering work experimentally introducing the two-dimensional carbon allotrope of graphene in 2004. The atomically thin hexagonally arranged carbon crystal structure has offered the opportunity for numerous studies in condensed matter physics and materials science, revealing new phenomenon and remarkable properties. Graphene has excellent chemical and mechanical stability, allowing researchers to probe the properties of graphene in a wide variety of applications and in contact with a wide variety of materials. Ballistic transport of graphene at room temperature suggests that graphene would be poised to enter in to a wide variety of microelectronic application; vii however, synthesis methods and surface effects have so far limited the widespread use of graphene. Additionally, the absence of electronic band gap in graphene, classifying it as a "semi-metal", limits the use of graphene to areas other than logic applications. In this work, fabrication methods for the improved synthesis graphene and selected two-dimensional transition metal dichalcogenides, molybdenum disulfide and tungsten disulfide, are presented for thin film transistor applications. First, the introduction of thin film zwitterionic polymer interlayers in graphene devices is outlined as a means to reduce the contact resistance between metal contacts and the underlying graphene layer. Second, a self-assembly nanoscale lithography process utilizing diblock copolymer templates as an etching mask directly on the surface of graphene is shown as a method to introduce a band gap in graphene due to quantum confinement effects. The third chapter applies to another class of two-dimensional materials, transition metal dichalcogenides, which, unlike graphene, can exhibit suitable electronic band structures for logic applications. When the thickness of these transition metal dichalcogenides is reduced to a single

  2. Research on the electronic and optical properties of polymer and other organic molecular thin films

    SciTech Connect

    1997-02-01

    The main goal of the work is to find materials and methods of optimization of organic layered electroluminescent cells and to study such properties of polymers and other organic materials that can be used in various opto-electronic devices. The summary of results obtained during the first year of work is presented. They are: (1) the possibility to produce electroluminescent cells using a vacuum deposition photoresist technology for commercial photoresists has been demonstrated; (2) the idea to replace the polyaryl polymers by other polymers with weaker hole conductivity for optimization of electroluminescent cells with ITO-Al electrodes has been suggested. The goal is to obtain amorphous processable thin films of radiative recombination layers in electroluminescent devices; (3) procedures of preparation of high-quality vacuum-deposited poly (p-phenylene) (PPP) films on various substrates have been developed; (4) it was found for the first time that the fluorescence intensity of PPP films depends on the degree of polymerization; (5) the role of interfaces between organic compounds, on one side, and metals or semiconductors, on the other side, has been studied and quenching of the fluorescence caused by semiconductor layer in thin sandwiches has been observed; (6) studies of the dynamics of photoexcitations revealed the exciton self-trapping in quasi-one-dimensional aggregates; and (7) conditions for preparation of highly crystalline fullerene C{sub 60} films by vacuum deposition have been found. Composites of C{sub 60} with conjugated polymers have been prepared.

  3. Growth, characterization and post-processing of inorganic and hybrid organic-inorganic thin films deposited using atomic and molecular layer deposition techniques

    NASA Astrophysics Data System (ADS)

    Abdulagatov, Aziz Ilmutdinovich

    Atomic layer deposition (ALD) and molecular layer deposition (MLD) are advanced thin film coating techniques developed for deposition of inorganic and hybrid organic-inorganic films respectively. Decreasing device dimensions and increasing aspect ratios in semiconductor processing has motivated developments in ALD. The beginning of this thesis will cover study of new ALD chemistry for high dielectric constant Y 2O3. In addition, the feasibility of conducting low temperature ALD of TiN and TiAlN is explored using highly reactive hydrazine as a new nitrogen source. Developments of these ALD processes are important for the electronics industry. As the search for new materials with more advanced properties continues, attention has shifted toward exploring the synthesis of hierarchically nanostructured thin films. Such complex architectures can provide novel functions important to the development of state of the art devices for the electronics industry, catalysis, energy conversion and memory storage as a few examples. Therefore, the main focus of this thesis is on the growth, characterization, and post-processing of ALD and MLD films for fabrication of novel composite (nanostructured) thin films. Novel composite materials are created by annealing amorphous ALD oxide alloys in air and by heat treatment of hybrid organic-inorganic MLD films in inert atmosphere (pyrolysis). The synthesis of porous TiO2 or Al2O3 supported V2O5 for enhanced surface area catalysis was achieved by the annealing of inorganic TiVxOy and AlV xOy ALD films in air. The interplay between phase separation, surface energy difference, crystallization, and melting temperature of individual oxides were studied for their control of film morphology. In other work, a class of novel metal oxide-graphitic carbon composite thin films was produced by pyrolysis of MLD hybrid organic-inorganic films. For example, annealing in argon of titania based hybrid films enabled fabrication of thin films of intimately

  4. Combinatorial screening of halide perovskite thin films and solar cells by mask-defined IR laser molecular beam epitaxy.

    PubMed

    Kawashima, Kazuhiro; Okamoto, Yuji; Annayev, Orazmuhammet; Toyokura, Nobuo; Takahashi, Ryota; Lippmaa, Mikk; Itaka, Kenji; Suzuki, Yoshikazu; Matsuki, Nobuyuki; Koinuma, Hideomi

    2017-01-01

    As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic-inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH3NH3I) and inorganic halide (B-site: PbI2) powder targets to deposit repeated A/B bilayer films where the thickness of each layer was controlled on molecular layer scale by programming the evaporation IR laser pulse number, length, or power. The layer thickness was monitored with an in situ quartz crystal microbalance and calibrated against ex situ stylus profilometer measurements. A computer-controlled movable mask system enabled the deposition of combinatorial thin film libraries, where each library contains a vertically homogeneous film with spatially programmable A- and B-layer thicknesses. On the composition gradient film, a hole transport Spiro-OMeTAD layer was spin-coated and dried followed by the vacuum evaporation of Ag electrodes to form the solar cell. The preliminary cell performance was evaluated by measuring I-V characteristics at seven different positions on the 12.5 mm × 12.5 mm combinatorial library sample with seven 2 mm × 4 mm slits under a solar simulator irradiation. The combinatorial solar cell library clearly demonstrated that the energy conversion efficiency sharply changes from nearly zero to 10.2% as a function of the illumination area in the library. The exploration of deposition parameters for obtaining optimum performance could thus be greatly accelerated. Since the thickness ratio of PbI2 and CH3NH3I can be freely chosen along the shadow mask movement, these experiments show the potential of this system for high-throughput screening of optimum chemical composition in the binary film library and application to halide perovskite solar cell.

  5. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    SciTech Connect

    Dangwal Pandey, A. Grånäs, E.; Shayduk, R.; Noei, H.; Vonk, V.; Krausert, K.; Franz, D.; Müller, P.; Keller, T. F.; Stierle, A.

    2016-08-21

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

  6. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dangwal Pandey, A.; Krausert, K.; Franz, D.; Grânäs, E.; Shayduk, R.; Müller, P.; Keller, T. F.; Noei, H.; Vonk, V.; Stierle, A.

    2016-08-01

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

  7. Molecular dynamics study of deformation and fracture in a tantalum nano-crystalline thin film

    NASA Astrophysics Data System (ADS)

    Smith, Laura; Zimmerman, Jonathan A.; Hale, Lucas M.; Farkas, Diana

    2014-06-01

    We present results from molecular dynamics simulations of two nano-crystalline tantalum thin films that illuminate the variety of atomic-scale mechanisms of incipient plasticity. Sample 1 contains approximately 500 K atoms and 3 grains, chosen to facilitate study at 105 s-1 strain rate; sample 2 has 4.6 M atoms and 30 grains. The samples are loaded in uniaxial tension at deformation rates of 105-109 s-1, and display phenomena including emission of perfect 1/2<1 1 1>-type dislocations and the formation and migration of twin boundaries. It was found that screw dislocation emission is the first deformation mechanism activated at strain rates below 108 s-1. Deformation twins emerge as a deformation mechanism at higher strains, with twins observed to cross grain boundaries as larger strains are reached. At high strain rates atoms are displaced with the characteristic twin vector at a ratio of 3 : 1 (108 s-1) or 4 : 1 (109 s-1) to characteristic dislocation vectors. Fracture is nucleated through a nano-void growth process. Grain boundary sliding does not scale with increasing strain rate. Detailed analysis of nano-scale deformation using these tools enhances our understanding of deformation mechanisms in tantalum.

  8. Magnetochromatic thin-film microplates.

    PubMed

    He, Le; Janner, Michael; Lu, Qipeng; Wang, Mingsheng; Ma, Hua; Yin, Yadong

    2015-01-07

    A new type of magnetochromatic material is developed based on thin-film interference of microplates self-assembled from super-paramagnetic nanocrystals. Dynamic optical tuning can be achieved through orientational manipulation of free-standing super-paramagnetic thin-film microplates using external magnetic fields.

  9. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  10. Synthesis of ALD zinc oxide and thin film materials optimization for UV photodetector applications

    NASA Astrophysics Data System (ADS)

    Tapily, Kandabara Nouhoum

    Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material. It is thermodynamically stable in the wurtzite structure at ambient temperature conditions. ZnO has very interesting optical and electrical properties and is a suitable candidate for numerous optoelectronic applications such as solar cells, LEDs and UV-photodetectors. ZnO is a naturally n-type semiconductor. Due to the lack of reproducible p-type ZnO, achieving good homojunction ZnO-based photodiodes such as UV-photodetectors remains a challenge. Meanwhile, heterojunction structures of ZnO with p-type substrates such as SiC, GaN, NiO, AlGaN, Si etc. are used; however, those heterojunction diodes suffer from low efficiencies. ZnO is an n-type material with numerous intrinsic defect levels responsible for the electrical and optical behaviors. Presently, there is no clear consensus about the origin of those defects. In this work, ZnO was synthesized by atomic layer deposition (ALD). ALD is a novel deposition technique suitable for nanotechnology engineering that provides unique features such as precise control of ZnO thin film with atomic resolution, high uniformity, good conformity and high aspect ratio. Using this novel deposition technique, the ALD ZnO deposition process was developed and optimized using diethyl zinc as the precursor for zinc and water vapor as the oxygen source. In order to optimize the film quality for use in electronic applications, the physical, mechanical and electrical properties were investigated. The structural and mechanical properties of the ALD ZnO thin films were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic Ellipsometry, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, UV-VIS absorption and nanoindentation. The electrical characterizations were performed using C-V, I-V, DLTS, Hall Effect, and four-point probe. The intrinsic defects responsible

  11. Polymer dielectric materials for organic thin-film transistors: Interfacial control and development for printable electronics

    NASA Astrophysics Data System (ADS)

    Kim, Choongik

    Organic thin-film transistors (OTFTs) have been extensively studied for organic electronics. In these devices, organic semiconductor-dielectric interface characteristics play a critical role in influencing OTFT operation and performance. This study begins with exploring how the physicochemical characteristics of the polymer gate dielectric affects the thin-film growth mode, microstructure, and OTFT performance parameters of pentacene films deposited on bilayer polymer (top)-SiO2 (bottom) dielectrics. Pentacene growth mode varies considerably with dielectric substrate, and correlations are established between pentacene film deposition temperature, the thin-film to bulk microstructural phase transition, and OTFT device performance. Furthermore, the primary influence of the polymer dielectric layer glass transition temperature on pentacene film microstructure and OTFT response is shown for the first time. Following the first study, the influence of the polymer gate dielectric viscoelastic properties on overlying organic semiconductor film growth, film microstructure, and TFT response are investigated in detail. From the knowledge that nanoscopically-confined thin polymer films exhibit glass transition temperatures that deviate substantially from those of the corresponding bulk materials, pentacene (p-channel) and cyanoperylene (n-channel) films grown on polymer gate dielectrics at temperatures well-below their bulk glass transition temperatures (Tg(b)) have been shown to exhibit morphological/microstructural transitions and dramatic OTFT performance discontinuities at well-defined temperatures (defined as the polymer "surface glass transition temperature," or Tg(s)). These transitions are characteristic of the particular polymer architecture and independent of film thickness or overall film cooperative chain dynamics. Furthermore, by analyzing the pentacene films grown on UV-curable polymer dielectrics with different curing times (hence, different degrees of

  12. The utilization of thin film transistor liquid crystal display waste glass as a pozzolanic material.

    PubMed

    Lin, K L; Huang, Wu-Jang; Shie, J L; Lee, T C; Wang, K S; Lee, C H

    2009-04-30

    This investigation elucidates the pozzolanic behavior of waste glass blended cement (WGBC) paste used in thin film transistor liquid crystal displays (TFT-LCD). X-ray diffraction (XRD) results demonstrate that the TFT-LCD waste glass was entirely non-crystalline. The leaching concentrations of the clay and TFT-LCD waste glass all met the current regulatory thresholds of the Taiwan EPA. The pozzolanic strength activity indices of TFT-LCD waste glass at 28 days and 56 days were 89% and 92%, respectively. Accordingly, this material can be regarded as a good pozzolanic material. The amount of TFT-LCD waste glass that is mixed into WGBC pastes affects the strength of the pastes. The strength of the paste clearly declined as the amount of TFT-LCD waste glass increased. XRD patterns indicated that the major difference was the presence of hydrates of calcium silicate (CSH, 2 theta=32.1 degrees), aluminate and aluminosilicate, which was present in WGBC pastes. Portland cement may have increased the alkalinity of the solution and induced the decomposition of the glass phase network. WGBC pastes that contained 40% TFT-LCD waste glass have markedly lower gel/space ratios and exhibit less degree of hydration than ordinary Portland cement (OPC) pastes. The most satisfactory characteristics of the strength were observed when the mixing ratio of the TFT-LCD waste glass was 10%.

  13. Temperature dependent optical characterization of Ni-TiO2 thin films as potential photocatalytic material

    NASA Astrophysics Data System (ADS)

    De, Rajnarayan; Haque, S. Maidul; Tripathi, S.; Rao, K. Divakar; Singh, Ranveer; Som, T.; Sahoo, N. K.

    2017-09-01

    Along with other transition metal doped titanium dioxide materials, Ni-TiO2 is considered to be one of the most efficient materials for catalytic applications due to its suitable energy band positions in the electronic structure. The present manuscript explores the possibility of improving the photocatalytic activity of RF magnetron sputtered Ni-TiO2 films upon heat treatment. Optical, structural and morphological and photocatalytic properties of the films have been investigated in detail for as deposited and heat treated samples. Evolution of refractive index (RI) and total film thickness as estimated from spectroscopic ellipsometry characterization are found to be in agreement with the trend in density and total film thickness estimated from grazing incidence X-ray reflectivity measurement. Interestingly, the evolution of these macroscopic properties were found to be correlated with the corresponding microstructural modifications realized in terms of anatase to rutile phase transformation and appearance of a secondary phase namely NiTiO3 at high temperature. Corresponding morphological properties of the films were also found to be temperature dependent which leads to modifications in the grain structure. An appreciable reduction of optical band gap from 2.9 to 2.5 eV of Ni-TiO2 thin films was also observed as a result of post deposition heat treatment. Testing of photocatalytic activity of the films performed under UV illumination demonstrates heat treatment under atmospheric ambience to be an effective means to enhance the photocatalytic efficiency of transition metal doped titania samples.

  14. Transition-metal-nitride-based thin films as novel energy harvesting materials.

    PubMed

    Eklund, Per; Kerdsongpanya, Sit; Alling, Björn

    2016-05-14

    The last few years have seen a rise in the interest in early transition-metal and rare-earth nitrides, primarily based on ScN and CrN, for energy harvesting by thermoelectricity and piezoelectricity. This is because of a number of important advances, among those the discoveries of exceptionally high piezoelectric coupling coefficient in (Sc,Al)N alloys and of high thermoelectric power factors of ScN-based and CrN-based thin films. These materials also constitute well-defined model systems for investigating thermodynamics of mixing for alloying and nanostructural design for optimization of phase stability and band structure. These features have implications for and can be used for tailoring of thermoelectric and piezoelectric properties. In this highlight article, we review the ScN- and CrN-based transition-metal nitrides for thermoelectrics, and drawing parallels with piezoelectricity. We further discuss these materials as a models systems for general strategies for tailoring of thermoelectric properties by integrated theoretical-experimental approaches.

  15. Transition-metal-nitride-based thin films as novel energy harvesting materials

    PubMed Central

    Kerdsongpanya, Sit; Alling, Björn

    2016-01-01

    The last few years have seen a rise in the interest in early transition-metal and rare-earth nitrides, primarily based on ScN and CrN, for energy harvesting by thermoelectricity and piezoelectricity. This is because of a number of important advances, among those the discoveries of exceptionally high piezoelectric coupling coefficient in (Sc,Al)N alloys and of high thermoelectric power factors of ScN-based and CrN-based thin films. These materials also constitute well-defined model systems for investigating thermodynamics of mixing for alloying and nanostructural design for optimization of phase stability and band structure. These features have implications for and can be used for tailoring of thermoelectric and piezoelectric properties. In this highlight article, we review the ScN- and CrN-based transition-metal nitrides for thermoelectrics, and drawing parallels with piezoelectricity. We further discuss these materials as a models systems for general strategies for tailoring of thermoelectric properties by integrated theoretical–experimental approaches. PMID:27358737

  16. Nanostructured multilayered thin film barriers for Mg{sub 2}Si thermoelectric materials

    SciTech Connect

    Battiston, S.; Boldrini, S.; Fiameni, S.; Agresti, F.; Famengo, A.; Fabrizio, M.; Barison, S.

    2012-06-26

    The Mg{sub 2}Si-based alloys are promising candidates for thermoelectric energy conversion in the middle-high temperature range in order to replace lead compounds. The main advantages of silicide-based thermoelectrics are the nontoxicity and the abundance of their constituent elements in the earth crust. The drawback of such kind of materials is their oxygen sensitivity at high temperature that entails their use under vacuum or inert atmosphere. In order to limit the corrosion phenomena, nanostructured multilayered molybdenum silicide-based materials were deposited via RF magnetron sputtering onto stainless steel, alumina and silicon (100) to set up the deposition process and then onto Mg{sub 2}Si pellets. XRD, EDS, FE-SEM and electrical measurements at high temperature were carried out in order to obtain, respectively, the structural, compositional, morphological and electrical characterization of the deposited coatings. At the end, the mechanical behavior of the system thin film/Mg{sub 2}Si-substrate as a function of temperature and the barrier properties for oxygen protection after thermal treatment in air at high temperature were qualitatively evaluated by FE-SEM.

  17. Biomimetic thin film deposition

    NASA Astrophysics Data System (ADS)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  18. Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy

    NASA Astrophysics Data System (ADS)

    Abderrafi, K.; Ribeiro-Andrade, R.; Nicoara, N.; Cerqueira, M. F.; Gonzalez Debs, M.; Limborço, H.; Salomé, P. M. P.; Gonzalez, J. C.; Briones, F.; Garcia, J. M.; Sadewasser, S.

    2017-10-01

    While CuInSe2 chalcopyrite materials are mainly used in their polycrystalline form to prepare thin film solar cells, epitaxial layers have been used for the characterization of defects. Typically, epitaxial layers are grown by metal-organic vapor phase epitaxy or molecular beam epitaxy (MBE). Here we present epitaxial layers grown by migration enhanced epitaxy (MEE) and compare the materials quality to MBE grown layers. CuInSe2 layers were grown on GaAs (0 0 1) substrates by co-evaporation of Cu, In, and Se using substrate temperatures of 450 °C, 530 °C, and 620 °C. The layers were characterized by high resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and atomic force microscopy (AFM). HR-XRD and HR-TEM show a better crystalline quality of the MEE grown layers, and Raman scattering measurements confirm single phase CuInSe2. AFM shows the previously observed faceting of the (0 0 1) surface into {1 1 2} facets with trenches formed along the [1 1 0] direction. The surface of MEE-grown samples appears smoother compared to MBE-grown samples, a similar trend is observed with increasing growth temperature.

  19. Thin-Film Thermal-Conductivity Measurement on Semi-Conducting Polymer Material Using the 3ω Technique

    NASA Astrophysics Data System (ADS)

    Rausch, S.; Rauh, D.; Deibel, C.; Vidi, S.; Ebert, H. P.

    2013-05-01

    Organic solar cells have gained increasing interest in recent years due to their promising low-cost processing possibility and high throughput compared to inorganic solar cells. Since the efficiency of organic solar cells is still low, further optimization has to be done. Reliable simulation of solar cell layout and performance strongly depends on correct input data of the electrical and thermal transport properties of the applied film materials. In many cases these material properties are only available for bulk material if available at all. Owing to the given film thicknesses on the order of tenths to hundreds of nanometer and to the preparation methods, the properties of the used system can differ from the bulk material values. For determination of the thin-film thermal conductivity, only a few measurement methods are known to provide accurate results with one of them being the 3ω technique. It allows the determination of the thermal conductivity of bulk materials as well as thin films down to a thickness of around 50 nm. This study is part of an investigation on the influence of local hot spots, generated by defects in the active layer of organic solar cells, and on the charge carrier mobility as well as the propagation of the hot spot due to the thermal conduction of the material. Applying the 3ω technique, the effective thermal conductivity of solution-derived poly(3-hexylthiophene) thin films of different thickness on a common glass substrate was investigated.

  20. Using volatile additives to alter the morphology and performance of active layers in thin-film molecular photovoltaic devices incorporating bulk heterojunctions.

    PubMed

    Dang, Minh Trung; Wuest, James D

    2013-12-07

    Thin-film photovoltaic devices composed of polymers or small molecules have an exciting future as sources of renewable energy because they can be made in large sizes on flexible surfaces by inexpensive techniques of fabrication. Significant progress in developing new molecular photovoltaic materials and device architectures has been achieved in the last decade. The identity of molecular components in active layers and their individual optoelectronic properties obviously help determine the properties of devices; in addition, however, the behavior of devices depends critically on the nature of the local organization of the components. Recent studies have shown that the morphology of active layers can be tuned by adjusting various parameters, including the solvent used to cast the layer, thermal annealing, and special processing additives. In this review, we summarize the effect of volatile additives on the nanoscale morphology of molecular blends, and we show how these effects can improve the performance of devices. Although we focus on the behavior of mixtures of the type used in current molecular thin-film photovoltaic devices, the subject of our review will interest researchers in all areas of science and technology requiring materials in which separate phases must form intimate long-lived intermixtures with defined structures.

  1. The Structure of Ice Nanoclusters and Thin-films of Water Ice: Implications for Icy Grains in Cold Molecular Clouds

    NASA Technical Reports Server (NTRS)

    Delzeit, Lance; Blake, David; Uffindell, Christine; DeVincenzi, Donald L. (Technical Monitor)

    2000-01-01

    The cubic to hexagonal phase transformation in water ice (I(sub c) yields I(sub h)) is used to measure the extent to which surface structure and impurities control bulk properties. In pure crystalline (I(sub c)) water ice nanoclusters and in thin-films of impure water ice, I(sub c) yields I(sub h) occurs at lower temperatures than in thin-films of pure water ice. The disordered surface of the 20 nm diameter nanoclusters promotes transformations or reactions which would otherwise be kinetically hindered. Likewise, impurities such as methanol introduce defects into the ice network, thereby allowing sluggish structural transitions to proceed. Such surface-related phenomena play an important role in promoting chemical reactions on interstellar ice grains within cold molecular clouds, where the first organic compounds are formed.

  2. Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material.

    PubMed

    Shih, Cheng Wei; Chin, Albert

    2017-04-25

    High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μ FE ) of 345 cm(2)/Vs, small sub-threshold slope (SS) of 103 mV/dec, high on-current/off-current (I ON /I OFF ) of 7 × 10(6), and a low drain-voltage (VD) of 2 V for low power operation. The achieved mobility is the best reported data among flexible electronic devices, which is reached by novel HfLaO passivation material on nano-crystalline zinc-oxide (ZnO) TFT to improve both I ON and I OFF . From X-ray photoelectron spectroscopy (XPS) analysis, the non-passivated device has high OH-bonding intensity in nano-crystalline ZnO, which damage the crystallinity, create charged scattering centers, and form potential barriers to degrade mobility.

  3. Effect of top electrode material on radiation-induced degradation of ferroelectric thin film structures

    SciTech Connect

    Brewer, Steven J.; Bassiri-Gharb, Nazanin; Deng, Carmen Z.; Callaway, Connor P.; Paul, McKinley K.; Fisher, Kenzie J.; Guerrier, Jonathon E.; Jones, Jacob L.; Rudy, Ryan Q.; Polcawich, Ronald G.; Glaser, Evan R.; Cress, Cory D.

    2016-07-14

    The effects of gamma irradiation on the dielectric and piezoelectric responses of Pb[Zr{sub 0.52}Ti{sub 0.48}]O{sub 3} (PZT) thin film stacks were investigated for structures with conductive oxide (IrO{sub 2}) and metallic (Pt) top electrodes. The samples showed, generally, degradation of various key dielectric, ferroelectric, and electromechanical responses when exposed to 2.5 Mrad (Si) {sup 60}Co gamma radiation. However, the low-field, relative dielectric permittivity, ε{sub r}, remained largely unaffected by irradiation in samples with both types of electrodes. Samples with Pt top electrodes showed substantial degradation of the remanent polarization and overall piezoelectric response, as well as pinching of the polarization hysteresis curves and creation of multiple peaks in the permittivity-electric field curves post irradiation. The samples with oxide electrodes, however, were largely impervious to the same radiation dose, with less than 5% change in any of the functional characteristics. The results suggest a radiation-induced change in the defect population or defect energy in PZT with metallic top electrodes, which substantially affects motion of internal interfaces such as domain walls. Additionally, the differences observed for stacks with different electrode materials implicate the ferroelectric–electrode interface as either the predominant source of radiation-induced effects (Pt electrodes) or the site of healing for radiation-induced defects (IrO{sub 2} electrodes).

  4. Extremely high rate deposition of polymer multilayer optical thin film materials

    SciTech Connect

    Affinito, J.D.

    1993-01-01

    This paper highlights a new technique for extremely high rate deposition of optical dielectric films (vacuum deposition of polymer multilayer thin films). This is a way to produce multilayer optical filters comprised of thousands of layers of either linear or nonlinear optical materials. The technique involves the flash evaporation of an acrylic monomer onto a moving substrate; the monomer is then cured. Acrylic polymers deposited to date are very clear for wavelengths between 0.35 and 2.5 [mu]m; they have extinction coefficients of k[approx]10[sup [minus]7]. Application of electric field during cross linking can polarize (''pole'') the film to greatly enhance the nonlinear optical properties. ''Poling'' films with the polymer multilayer technique offers advantages over conventional approaches, in that the polarization should not decay over time. Battelle's Pacific Northwest Laboratory is well suited for bringing linear and nonlinear polymer multilayer optical filter technology to manufacturing production status for batch and wide area web applications. 10 figs.

  5. Extremely high rate deposition of polymer multilayer optical thin film materials

    SciTech Connect

    Affinito, J.D.

    1993-03-01

    This paper highlights a new technique for extremely high rate deposition of optical dielectric films (vacuum deposition of polymer multilayer thin films). This is a way to produce multilayer optical filters comprised of thousands of layers of either linear or nonlinear optical materials. The technique involves the flash evaporation of an acrylic monomer onto a moving substrate; the monomer is then cured. Acrylic polymers deposited to date are very clear for wavelengths between 0.35 and 2.5 {mu}m; they have extinction coefficients of k{approx}10{sup {minus}7}. Application of electric field during cross linking can polarize (``pole``) the film to greatly enhance the nonlinear optical properties. ``Poling`` films with the polymer multilayer technique offers advantages over conventional approaches, in that the polarization should not decay over time. Battelle`s Pacific Northwest Laboratory is well suited for bringing linear and nonlinear polymer multilayer optical filter technology to manufacturing production status for batch and wide area web applications. 10 figs.

  6. Atomic layer deposition synthesized TiO{sub x} thin films and their application as microbolometer active materials

    SciTech Connect

    Tanrikulu, Mahmud Yusuf; Rasouli, Hamid Reza; Ghaffari, Mohammad; Topalli, Kagan; Okyay, Ali Kemal

    2016-05-15

    This paper demonstrates the possible usage of TiO{sub x} thin films synthesized by atomic layer deposition as a microbolometer active material. Thin film electrical resistance is investigated as a function of thermal annealing. It is found that the temperature coefficient of resistance values can be controlled by coating/annealing processes, and the value as high as −9%/K near room temperature is obtained. The noise properties of TiO{sub x} films are characterized. It is shown that TiO{sub x} films grown by atomic layer deposition technique could have a significant potential to be used as a new active material for microbolometer-based applications.

  7. Specific indolo[3,2,1-jk]carbazole conducting thin-film materials production by selective substitution.

    PubMed

    Henry, John B; Wharton, Stuart I; Wood, Elanor R; McNab, Hamish; Mount, Andrew R

    2011-06-02

    Selectively substituted indolo[3,2,1-jk] carbazole (IC) molecules have been synthesized through flash vacuum pyrolysis (FVP) and then electro-oxidized, resulting in the formation of redox-active and electronically conducting thin films consisting exclusively of three highly luminescent dimer species, the 2,2'-, 2,10'-, and 10,10'-coupled dimers. DFT calculation has enabled both the accurate calculation of monomer oxidation potentials and the prediction of the nature of the resulting dimers through consideration of the coupling of the oxidized monomer radical cations. This demonstrates that substituted ICs represent a class of molecules able to form redox-active and conducting dimer films of controlled composition upon oxidation and that DFT calculations can be used to inform the synthesis of specific IC monomers most likely to both produce electronically conducting thin-film materials and yield specific luminescent dimers with desirable materials properties.

  8. Primary research efforts on exploring the commercial possibilities of thin film growth and materials purification in space

    NASA Technical Reports Server (NTRS)

    1989-01-01

    The progress made on research programs in the 1987 to 1988 year is reported. The research is aimed at producing thin film semiconductors and superconductor materials in space. Sophisticated vacuum chambers and equipment were attained for the epitaxial thin film growth of semiconductors, metals and superconductors. In order to grow the best possible epitaxial films at the lowest possible temperatures on earth, materials are being isoelectronically doped during growth. It was found that isoelectrically doped film shows the highest mobility in comparison with films grown at optimal temperatures. Success was also attained in growing epitaxial films of InSb on sapphire which show promise for infrared sensitive devices in the III-V semiconductor system.

  9. Ferromagnetism and Nonmetallic Transport of Thin-Film α-FeSi2 : A Stabilized Metastable Material

    DOE PAGES

    Cao, Guixin; Singh, D. J.; Zhang, X. -G.; ...

    2015-04-07

    Tmore » he epitaxially stabilized metallic α-FeSi2 thin films on Si(001) were grown using pulsed laser deposition. While the bulk material of α-FeSi2 is a high temperature metastable phase and nonmagnetic, the thin film is stabilized at room temperature and shows unusual electronic transport and magnetic properties due to strain modification. he transport renders two different conducting states with a strong crossover at 50 K accompanied by an onset of ferromagnetism as well as a substantial magnetocaloric effect and magnetoresistance. hese experimental results are discussed in terms of the unusual electronic structure of α-FeSi2 obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our findings provide an example of a tailored material with interesting physics properties for practical applications.« less

  10. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  11. Synthesis and modification of mesoporous silica and the preparation of molecular sieve thin films via pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Coutinho, Decio Heringer

    2001-07-01

    Hexagonal mesoporous DAM-1 (Dallas Amorphous Material-1) was prepared using Vitamin E TPGS as the structure-directing agent. Depending upon the temperature and gel composition, highly ordered and hydrothermally stable DAM-1 with various morphologies could be achieved including spheres, gyroids, discoid, hexagonal plates and rods. This synthesis was modified to prepare hybrid organic-inorganic amine and thiol bifunctionalized DAM-1 by direct co-condensation under acidic conditions. Patterned DAM-1 thin films were prepared on patterned transparencies utilizing pulsed laser deposition (PLD) and line patterning techniques. DAM-1 laser ablation onto the patterned substrate followed by hydrothermal treatment resulted in a densely packed film. Removal of the patterned lines by sonication revealed patterned DAM-1 films. Thin films of zeolite type X were also prepared using the PLD technique. Laser ablation of zeolite X onto TiN-coated silicon wafers followed by a hydrothermal treatment resulted in partially oriented, crystalline membranes. Hydrothermal treatment of PLD films on stainless steel mesh produced a coated wire mesh with a 3-mum thick zeolite X film. A novel strategy for imprinting mesoporous SBA-15 that combines a triblock copolymer template and a chiral ruthenium complex is reported. A chiral PEO helix was formed by the chiral ruthenium complex interaction with the block copolymer during the synthesis of SBA-15. Upon removal of the chiral ruthenium complex, a stereospecfic cavity was created. Preliminary results indicated stereoselective absorption of Delta or Λ-Ru(phen)3 2+ isomer from a racemic mixture could be achieved depending on the chirality of the PEO chain. Practicum Two. The industrial practicum report describes the process development unit (PDU) 3-pentenenitrile (3PN) refining operation. This distillation works was operated to refine crude 3PN product, which contained 3PN, 2-methyl-3-butenenitrile (2M3BN), and other byproducts. This report also

  12. Pulsed—Laser Deposition Of Oxide Thin Films And Laser—Induced Breakdown Spectroscopy Of Multi—Element Materials

    NASA Astrophysics Data System (ADS)

    Pedarnig, Johannes D.

    2010-10-01

    New results of the Linz group on pulsed—laser deposition (PLD) of oxide thin films and on laser—induced breakdown spectroscopy (LIBS) of multi-element materials are reported. High-Tc superconducting (HTS) films with enhanced critical current density Jc are produced by laser ablation of novel nano-composite ceramic targets. The targets contain insulating nano-particles that are embedded into the YBa2Cu3O7 matrix. Epitaxial double-layers of lithium-doped and aluminum-doped ZnO are deposited on r-cut sapphire substrates. Acoustic over-modes in the GHz range are excited by piezoelectric actuation of layers. Smooth films of rare-earth doped glass are produced by F2—laser ablation. The transport properties of HTS thin films are modified by light—ion irradiation. Thin film nano—patterning is achieved by masked ion beam irradiation. LIBS is employed to analyze trace elements in industrial iron oxide powder and reference polymer materials. Various trace elements of ppm concentration are measured in the UV/VIS and vacuum-UV spectral range. Quantitative LIBS analysis of major components in oxide materials is performed by calibration-free methods.

  13. A simple solution to the problem of effective utilisation of the target material for pulsed laser deposition of thin films

    SciTech Connect

    Kuzanyan, A S; Kuzanyan, A A; Petrosyan, V A; Pilosyan, S Kh; Grasiuk, A Z

    2013-12-31

    The factors determining the efficiency of the target material utilisation for pulsed laser deposition of films are considered. The target volume is calculated, which is evaporated in the ablation process by the focused laser radiation having a rectangular form. The new device is suggested and developed for obtaining thin films by the method of laser deposition, which is specific in the employment of a simple optical system mounted outside a deposition chamber that comprises two lenses and the diaphragm and focuses the laser beam onto a target in the form of a sector-like spot. Thin films of CuO and YBaCuO were deposited with this device. Several deposition cycles revealed that the target material is consumed uniformly from the entire surface of the target. A maximal spread of the target thickness was not greater than ±2% both prior to deposition and after it. The device designed provides a high coefficient of the target material utilisation efficiency. (laser deposition of thin films)

  14. Self-assembled monolayer initiated electropolymerization: a route to thin-film materials with enhanced photovoltaic performance.

    PubMed

    Hwang, Euiyong; de Silva, K M Nalin; Seevers, Chad B; Li, Jie-Ren; Garno, Jayne C; Nesterov, Evgueni E

    2008-09-02

    Continuing progress in the field of organic polymer photovoltaic (PV) devices requires the development of new materials with better charge-transport efficiency. To improve this parameter, we have investigated surface-attached bilayer polymer PV thin films prepared starting from a covalently attached monolayer of an electroactive initiator using sequential electropolymerization of dithiophene and its derivatives. These systems were found to show significantly increased photocurrent generation quantum yields as compared to systems made through conventional approaches. In addition, the described PV thin films possess remarkable mechanical, air, and photostability. These properties likely arise from the more uniform and better ordered bulk layer morphologies as well as tighter covalently bonded contacts at the interfacial junctions, contributing to improved charge transport. While more studies on the fundamental reasons behind the discovered phenomenon are currently underway, this information can be readily applied to build more efficient organic polymer photovoltaics.

  15. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  16. Thin Films

    NASA Astrophysics Data System (ADS)

    Naffouti, Wafa; Nasr, Tarek Ben; Mehdi, Ahmed; Kamoun-Turki, Najoua

    2014-11-01

    Titanium dioxide (TiO2) thin films were synthesized on glass substrates by spray pyrolysis. The effect of solution flow rate on the physical properties of the films was investigated by use of x-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy (AFM), and spectrophotometry techniques. XRD analysis revealed the tetragonal anatase phase of TiO2 with highly preferred (101) orientation. AFM images showed that grain size on top of TiO2 thin films depended on solution flow rate. An indirect band gap energy of 3.46 eV was determined by means of transmission and reflection measurements. The envelope method, based on the optical transmission spectrum, was used to determine film thickness and optical constants, for example real and imaginary parts of the dielectric constant, refractive index, and extinction coefficient. Ultraviolet and visible photoluminescence emission peaks were observed at room temperature. These peaks were attributed to the intrinsic emission and to the surface defect states, respectively.

  17. Organic Molecular Thin Films: Growth, Structure, and Manipulation Studied by Scanning Tunneling Microscopy

    NASA Astrophysics Data System (ADS)

    Stock, Taylor J. Z.

    Room temperature scanning tunneling microscopy (RT-STM) has been used to observe the growth modes, morphologies and crystal structures of sub-monolayer (ML) to multilayer thin films of phthalocyanines (H2Pc and CuPc), C60 fullerenes, and CuPc:C60 composites, grown on the Cu(111) surface. In addition to imaging these films, STM has been used to manipulate the various molecules via hot tunneling electron injection. At sub-ML coverage the phthalocyanines are mobile on the Cu(111) and form a diffuse 2D gas. Molecules in this mobile phase can be immobilized on the substrate through exposure to tunneling electrons at a bias voltage exceeding a threshold value. The bias threshold value and strength of the induced molecular immobilization is dependent on the particular phthalocyanine molecule/substrate combination. At approximately one ML coverage the phthalocyanine molecules become sterically confined and lie flat on the Cu(111), forming an ordered 2D lattice. As coverage is increased beyond 1ML in the Cu(111)-CuPc system, the molecule-substrate interaction diminishes in strength and the intermolecular interaction becomes dominant, causing the molecular crystal lattice parameters to evolve towards the bulk α-phase. This trend continues for the layer-by-layer growth of three complete ML, and then gives way to 3D island growth at a coverage of 4 ML. The 3D island growth mode of the pure CuPc films is dramatically suppressed by the inclusion of C60 during deposition. X-ray diffraction (XRD) and STM studies reveal that the CuPc molecular packing is altered upon C 60 inclusion, producing disordered CuPc-C60 interfaces. The ordered molecular stacking of CuPc is found to be disrupted completely when C60 concentration reaches 30 wt.%. This disorder in the CuPc:C 60 composites is explained in terms of the relative strengths of the intermolecular interactions. Furthermore, an understanding of these relative interaction strengths is exploited to grow ordered composite films

  18. Chemical Fabrication Used to Produce Thin-Film Materials for High Power-to- Weight-Ratio Space Photovoltaic Arrays

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Rybicki, George C.; Raffaelle, Ryne P.; Harris, Jerry D.; Hehemann, David G.; Junek, William; Gorse, Joseph; Thompson, Tracy L.; Hollingsworth, Jennifer A.; Buhro, William E.

    2000-01-01

    The key to achieving high specific power (watts per kilogram) space solar arrays is the development of a high-efficiency, thin-film solar cell that can be fabricated directly on a flexible, lightweight, space-qualified durable substrate such as Kapton (DuPont) or other polyimide or suitable polymer film. Cell efficiencies approaching 20 percent at AM0 (air mass zero) are required. Current thin-film cell fabrication approaches are limited by either (1) the ultimate efficiency that can be achieved with the device material and structure or (2) the requirement for high-temperature deposition processes that are incompatible with all presently known flexible polyimide or other polymer substrate materials. Cell fabrication processes must be developed that will produce high-efficiency cells at temperatures below 400 degrees Celsius, and preferably below 300 degress Celsius to minimize the problems associated with the difference between the coefficients of thermal expansion of the substrate and thin-film solar cell and/or the decomposition of the substrate.

  19. Synthesis and Screening of Phase Change Chalcogenide Thin Film Materials for Data Storage.

    PubMed

    Guerin, Samuel; Hayden, Brian; Hewak, Daniel W; Vian, Chris

    2017-07-10

    A combinatorial synthetic methodology based on evaporation sources under an ultrahigh vacuum has been used to directly synthesize compositional gradient thin film libraries of the amorphous phases of GeSbTe alloys at room temperature over a wide compositional range. An optical screen is described that allows rapid parallel mapping of the amorphous-to-crystalline phase transition temperature and optical contrast associated with the phase change on such libraries. The results are shown to be consistent with the literature for compositions where published data are available along the Sb2Te3-GeTe tie line. The results reveal a minimum in the crystallization temperature along the Sb2Te3-Ge2Te3 tie line, and the method is able to resolve subsequent cubic-to-hexagonal phase transitions in the GST crystalline phase. HT-XRD has been used to map the phases at sequentially higher temperatures, and the results are reconciled with the literature and trends in crystallization temperatures. The results clearly delineate compositions that crystallize to pure GST phases and those that cocrystallize Te. High-throughput measurement of the resistivity of the amorphous and crystalline phases has allowed the compositional and structural correlation of the resistivity contrast associated with the amorphous-to-crystalline transition, which range from 5-to-8 orders of magnitude for the compositions investigated. The results are discussed in terms of the compromises in the selection of these materials for phase change memory applications and the potential for further exploration through more detailed secondary screening of doped GST or similar classes of phase change materials designed for the demands of future memory devices.

  20. Phases, line tension and pattern formation in molecularly thin films at the air-water interface

    NASA Astrophysics Data System (ADS)

    Mandal, Pritam

    A Langmuir film, which is a molecularly thin insoluble film on a liquid substrate, is one practical realization of a quasi-two dimensional matter. The major advantages of this system for the study of phase separation and phase co-existence are (a) it allows accurate control of the components and molecular area of the film and (b) it can be studied by various methods that require very flat films. Phase separation in molecularly thin films plays an important role in a range of systems from biomembranes to biosensors. For example, phase-separated lipid nano-domains in biomembranes are thought to play crucial roles in membrane function. I use Brewster Angel Microscopy (BAM) coupled with Fluorescence Microscopy (FM) and static Light Scattering Microscopy (LSM) to image phases and patterns within Langmuir films. The three microscopic techniques --- BAM, FM and LSM --- are complimentary to each other, providing distinct sets of information. They allow direct comparison with literature results in lipid systems. I have quantitatively validated the use of detailed hydrodynamic simulations to determine line tension in monolayers. Line tension decreases as temperature rises. This decrease gives us information on the entropy associated with the line, and thus about line structure. I carefully consider the thermodynamics of line energy and entropy to make this connection. In the longer run, LSM will be exploited to give us further information about line structure. I have also extended the technique by testing it on domains within the curved surface of a bilayer vesicle. I also note that in the same way that the presence of surface-active agents, known as surfactants, affects surface energy, the addiction of line active agents alters the inter-phase line energy. Thus my results set to stage to systematically study the influence of line active agents ---'linactants' --- on the inter-phase line energy. Hierarchal self-assembled chiral patterns were observed as a function of

  1. Chemically deposited thin films of sulfides and selenides of antimony and bismuth as solar energy materials

    NASA Astrophysics Data System (ADS)

    Nair, M. T.; Nair, Padmanabhan K.; Garcia, V. M.; Pena, Y.; Arenas, O. L.; Garcia, J. C.; Gomez-Daza, O.

    1997-10-01

    Chemical bath deposition techniques for bismuth sulfide, bismuth selenide, antimony sulfide, and antimony selenide thin films of about 0.20 - 0.25 micrometer thickness are reported. All these materials may be considered as solar absorber films: strong optical absorption edges, with absorption coefficient, (alpha) , greater than 104 cm-1, are located at 1.31 eV for Bi2Se3, 1.33 eV for Bi2S3, 1.8 eV for Sb2S3, and 1.35 eV for Sb2Se3. As deposited, all the films are nearly amorphous. However, well defined crystalline peaks matching bismuthinite (JCPDS 17- 0320), paraguanajuatite (JCPDS 33-0214), and stibnite (JCPDS 6-0474) and antimony selenide (JCPDS 15-0861) for Bi2S3, Bi2Se3, Sb2S3 and Sb2Se3 respectively, are observed when the films are annealed in nitrogen at 300 degrees Celsius. This is accompanied by a substantial modification of the electrical conductivity in the films: from 10-7 (Omega) -1 cm-1 (in as prepared films) to 10 (Omega) -1 cm-1 in the case of bismuth sulfide and selenide films, and enhancement of photosensitivity in the case of antimony sulfide films. The chemical deposition of a CuS/CuxSe film on these Vx- VIy films and subsequent annealing at 300 degrees Celsius for 1 h at 1 torr of nitrogen leads to the formation of p-type films (conductivity of 1 - 100 (Omega) -1 cm-1) of multinary composition. Among these, the formation of Cu3BiS3 (JCPDS 9-0488) and Cu3SbS4 (JCPDS 35- 0581), CuSbS2 (JCPDS 35-0413) have been clearly detected. Solar energy applications of these films are suggested.

  2. Thin film composite electrolyte

    DOEpatents

    Schucker, Robert C.

    2007-08-14

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  3. Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A.; VanKeuls, Fred W.; Subramanyam, Guru; Mueller, Carl H.; Romanofsky, Robert R.; Rosado, Gerardo

    2000-01-01

    The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

  4. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    SciTech Connect

    Skarlinski, Michael D.; Quesnel, David J.

    2015-12-21

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

  5. Deviations from stoichiometry and molecularity in non-stoichiometric Ag-In-Se thin films: Effects on the optical and the electrical properties

    NASA Astrophysics Data System (ADS)

    Kim, Nam-Hoon; Yoo, Myoung Han; Ko, Pil Ju; Lee, Woo-Sun

    2016-12-01

    Non-stoichiometric Ag-In-Se (AIS) thin films were prepared using co-sputtering with InSe2 and Ag targets followed by rapid thermal annealing. The internal stress of the non-stoichiometric AIS thin films was strongly affected by the deviation from molecularity, Δ m. When Δ m was far from stoichiometry, the non-stoichiometric AIS thin films showed better crystallinity. The improvement in the crystallinity and the release of internal stress led to a reduction in the optical band gap from 1.63 to 1.19 eV and in the resistivity from 6.45 × 10-2 to 3.21 × 10-3 Ω·cm for the non-stoichiometric AIS thin films, with a similar tendency for the deviation from molecularity, Δ m. The non-stoichiometric AIS thin films, with Δ m < 0 and Δ s < 0, exhibited n-type conductivity with carrier concentrations on the order of magnitude of 1018 cm-3. The mean absorbance of the 200-nm-thick non-stoichiometric AIS thin films was 1.50, corresponding to an absorption of approximately 96.84 % of the incident light in the visible region.

  6. Giant surfactants of poly(ethylene oxide)- b-polystyrene-(molecular nanoparticle): nanoparticle-driven self-assembly with sub-10-nm nanostructures in thin films

    NASA Astrophysics Data System (ADS)

    Hsu, Chih-Hao; Lin, Zhiwei; Dong, Xue-Hui; Hsieh, I.-Fan; Cheng, Stephen Z. D.

    2014-03-01

    Giant surfactants are built upon precisely attaching shape- and volume-persistent molecular nanoparticles (MNP) to polymeric flexible tails. The unique class of self-assembling materials, giant surfactants, has been demonstrated to form self-assembled ordered nanostructures, and their self-assembly behaviors are remarkably sensitive to primary chemical structures. In this work, two sets of giant surfactants with functionalized MNP attached to diblock copolymer tails were studied in thin films. Carboxylic acid-functionalized [60]fullerene (AC60) tethered with PEO- b-PS (PEO-PS-AC60) represents an ABA' (hydrophilic-hydrophobic-hydrophilic) giant surfactant, and fluoro-functionalized polyhedral oligomeric silsesquioxane (FPOSS) tethered with PEO- b-PS (PEO-PS-FPOSS) represents an ABC (hydrophilic-hydrophobic-omniphobic) one. The dissimilar chemical natures of the MNPs result in different arrangement of MNPs in self-assembled structures, the dispersion of AC60 in PEO domain and the single domain of FPOSS. Moreover, the chemically bonded MNPs could induce the originally disordered small molecular PEO- b-PS to form ordered cylindrical and lamellar structure, as evidenced by TEM and GISAXS, leading to sub-10-nm nanostructures of copolymer in the thin film state.

  7. Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

    NASA Astrophysics Data System (ADS)

    Ghose, Susmita; Rahman, Shafiqur; Hong, Liang; Rojas-Ramirez, Juan Salvador; Jin, Hanbyul; Park, Kibog; Klie, Robert; Droopad, Ravi

    2017-09-01

    The growth of high quality epitaxial beta-gallium oxide (β-Ga2O3) using a compound source by molecular beam epitaxy has been demonstrated on c-plane sapphire (Al2O3) substrates. The compound source provides oxidized gallium molecules in addition to oxygen when heated from an iridium crucible in a high temperature effusion cell enabling a lower heat of formation for the growth of Ga2O3, resulting in a more efficient growth process. This source also enabled the growth of crystalline β-Ga2O3 without the need for additional oxygen. The influence of the substrate temperatures on the crystal structure and quality, chemical bonding, surface morphology, and optical properties has been systematically evaluated by x-ray diffraction, scanning transmission electron microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, spectroscopic ellipsometry, and UV-vis spectroscopy. Under optimized growth conditions, all films exhibited pure (" separators="|2 ¯01 ) oriented β-Ga2O3 thin films with six-fold rotational symmetry when grown on a sapphire substrate. The thin films demonstrated significant absorption in the deep-ultraviolet (UV) region with an optical bandgap around 5.0 eV and a refractive index of 1.9. A deep-UV photodetector fabricated on the high quality β-Ga2O3 thin film exhibits high resistance and small dark current (4.25 nA) with expected photoresponse for 254 nm UV light irradiation suggesting that the material grown using the compound source is a potential candidate for deep-ultraviolet photodetectors.

  8. Molecular architecture of thin films fabricated via physical vapor deposition and containing a poly(azo)urethane.

    PubMed

    Aléssio, Priscila; Constantino, Carlos José Leopoldo; Job, Aldo Eloizo; Aroca, Ricardo; González, Eduardo René Pérez

    2010-05-01

    Organic thin films are widely applied as transducers in devices whose performance is determined by the optical and electrical properties of the films. In this context, the molecular architecture of the thin films plays an important role. In this work we report the fabrication and characterization of a poly(azo)urethane synthesized fixing CO2 in bis-epoxide followed by a copolymerization reaction with an azodiamine without using isocyanate. The poly(azo)urethane thin films were fabricated by physical vapor deposition (PVD) technique using vacuum thermal evaporation. The molecular architecture of the PVD films was investigated under control growth at nanometer level of thickness, as well as the surface morphology at micro and nanometer scales and the molecular organization. The thermal stability of the poly(azo)urethane molecules, which is a challenge in itself considering the thermal evaporation process, was followed by thermogravimetric analysis (TG) and also by both Fourier transform infrared absorption (FTIR) and ultraviolet-visible (UV-vis) absorption spectroscopies. The UV-vis absorption spectra showed a linear growth of the absorbance of the PVD films with the mass thickness measured by a quartz crystal balance. A random distribution of the poly(azo)urethane molecules in the PVD films was revealed by FTIR spectra. The film morphology was investigated at microscopic level combining chemical and topographical information through micro-Raman technique. At nanoscopic scale, the morphology was investigated by atomic force microscopy (AFM) for films fabricated using distinct evaporation rates. As a proof of principle (for potential applications), the film luminescence was measured over a wide range of temperature. Interestingly, an unusual increase of fluorescence intensity was observed at +150 degrees C after a monotonic decrease from -150 degrees C.

  9. Nanoporous poly(3-hexylthiophene) thin film structures from self-organization of a tunable molecular bottlebrush scaffold

    DOE PAGES

    Ahn, Suk-kyun; Carrillo, Jan-Michael Y.; Keum, Jong K.; ...

    2017-04-07

    The ability to widely tune the design of macromolecular bottlebrushes provides access to self-assembled nanostructures formed by microphase segregation in melt, thin film and solution that depart from structures adopted by simple linear copolymers. A series of random bottlebrush copolymers containing poly(3-hexylthiophene) (P3HT) and poly(D,L-lactide) (PLA) side chains grafted on a poly(norbornene) backbone were synthesized via ring-opening metathesis polymerization (ROMP) using the grafting through approach. P3HT side chains induce a physical aggregation of the bottlebrush copolymers upon solvent removal by vacuum drying, primarily driven by attractive π–π interactions; however, the amount of aggregation can be controlled by adjusting side chainmore » composition or by adding linear P3HT chains to the bottlebrush copolymers. Coarse-grained molecular dynamics simulations reveal that linear P3HT chains preferentially associate with P3HT side chains of bottlebrush copolymers, which tends to reduce the aggregation. The nanoscale morphology of microphase segregated thin films created by casting P3HT–PLA random bottlebrush copolymers is highly dependent on the composition of P3HT and PLA side chains, while domain spacing of nanostructures is mainly determined by the length of the side chains. The selective removal of PLA side chains under alkaline conditions generates nanoporous P3HT structures that can be tuned by manipulating molecular design of the bottlebrush scaffold, which is affected by molecular weight and grafting density of the side chains, and their sequence. Furthermore, the ability to exploit the unusual architecture of bottlebrushes to fabricate tunable nanoporous P3HT thin film structures may be a useful way to design templates for optoelectronic applications or membranes for separations.« less

  10. Microstructure of Thin Films

    DTIC Science & Technology

    1990-02-07

    study of Ion Assisted deposition (IAD) with different materials: metals , Al, Ag, and dielectrics, nitrides, fluorides and oxides. Some additional...optical thin films. The materials studied by ion -assisted deposition has ranged over metals , especially silver and aluminum, and dielectrics, especially... Ion -assisted deposition of metals It was of interest to us to determine if the great benefits of io-assisted deposition in the fabrication of

  11. Synthesis of Hexagonal FeMnP Thin Films from a Single-Source Molecular Precursor.

    PubMed

    Leitner, Andrew P; Schipper, Desmond E; Chen, Jing-Han; Colson, Adam C; Rusakova, Irene; Kumar Rai, Binod; Morosan, Emilia; Whitmire, Kenton Herbert

    2017-03-08

    The first heterobimetallic phosphide thin film containing iron, manganese, and phosphorus derived from the single-source precursor FeMn(CO)8(μ-PH2) has been prepared using a home-built metal-organic chemical vapor deposition apparatus. The thin film contains the same ratio of iron, manganese, and phosphorus as the initial precursor. The film becomes oxidized when deposited on a quartz substrate whereas the film deposited on an alumina substrate provides a more homogeneous product. Powder X-ray diffraction confirms the formation of metastable, hexagonal FeMnP phase that was previously only observed at temperatures above 1200 ºC. Selected area electron diffraction on single crystals isolated from the films were indexed to the hexagonal phase. The effective moment of the films (µeff = 3.68µB) matches the previously reported theoretical value for the metastable hexagonal phase whereas the more stable orthorhombic phase is known to be antiferromagnetic. These results not only demonstrate the successful synthesis of a bimetallic, ternary thin film from a single-source precursor, but also the first low temperature approach to the hexagonal phase of FeMnP.

  12. Improving stability of photoluminescence of ZnSe thin films grown by molecular beam epitaxy by incorporating Cl dopant

    SciTech Connect

    Wang, J. S.; Shen, J. L.; Chen, W. J.; Tsai, Y. H.; Wang, H. H.; Yang, C. S.; Chen, R. H.; Tsai, C. D.

    2011-01-10

    This investigation studies the effect of chlorine (Cl) dopant in ZnSe thin films that were grown by molecular beam epitaxy on their photoluminescence (PL) and the stability thereof. Free excitonic emission was observed at room-temperature in the Cl-doped sample. Photon irradiation with a wavelength of 404 nm and a power density of 9.1 W/cm{sup 2} has a much stronger effect on PL degradation than does thermal heating to a temperature of 150 deg. C. Additionally, this study shows that the generation of nonradiative centers by both photon irradiation and thermal heating can be greatly inhibited by incorporating Cl dopant.

  13. Effect of molecular coverage on the electric conductance of a multi-walled carbon nanotube thin film

    NASA Astrophysics Data System (ADS)

    Kokabu, Takuya; Inoue, Shuhei; Matsumura, Yukihiko

    2016-06-01

    We investigated the influence of water adsorption on a CNT thin film. When we assumed that the magnitude of the change in electrical resistance was correlated with the surface coverage of the adsorbed molecules, this phenomenon could be explained by two-layer adsorption. The first layer was expressed by Langmuir adsorption and that on the second layer was expressed by Fowler-Guggenheim adsorption, which was derived by Bragg-Williams approximation and involved a lateral molecular interaction. The adsorption energy estimated by this assumption was on the same order as derived by DFT calculation.

  14. Determination of molecular anisotropy in thin films of discotic assemblies using attenuated total reflectance UV-visible spectroscopy.

    PubMed

    Flora, Ware H; Mendes, Sergio B; Doherty, Walter J; Saavedra, S Scott; Armstrong, Neal R

    2005-01-04

    We report here an investigation of absorbance anisotropy in highly ordered, single bilayer (ca. 5.6 nm) Langmuir-Blodgett (LB) thin films of discotic liquid-crystalline phthalocyanines, using a recently introduced broad-band attenuated total reflectance (ATR) spectroscopic technique, capable of measuring dichroism in such films in the UV--visible optical region down to absorbances of ca. 0.003 absorbance units. On the basis of the ATR measurements of LB-deposited films, a thorough treatment was established to determine the ensemble average of the Cartesian components and the associated optical anisotropy of transition dipoles in the molecular film. In an effort to recover order parameters of molecular orientation, those results were interpreted with a circular dipole model, which is the expected model for the isolated molecule based on symmetry properties. We measured a strong dipole component normal to the film plane that cannot be explained in terms of a truly circular model, indicating that the molecular transition dipoles were perturbed upon aggregation. The utility of the experimental approach was further demonstrated by (a) investigating the effect of substrate modifiers (methyl- and phenyl-terminated silanes) on the ordering within the phthalocyanine film and (b) the effect of water immersion and re-annealing of the thin film on molecular ordering and optical anisotropy.

  15. Thin Films in the Technology of Superhigh Frequencies.

    DTIC Science & Technology

    A comprehensive discussion of the physics, manufacturing processes and applications of thin films in modern communications technology. The following...subjects are discussed in detail: (1) Structure and properties of thin films : vacuum vaporization, cathode sputtering, thin film structure and...physical properties. (2) Thin films as SHF load resistors: peculiarities of SHF resistors, material selection, behavior in an SHF field, cylindrical disc

  16. Materials optimization and ghz spin dynamics of metallic ferromagnetic thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Cheng, Cheng

    Metallic ferromagnetic (FM) thin film heterostructures play an important role in emerging magnetoelectronic devices, which introduce the spin degree of freedom of electrons into conventional charge-based electronic devices. As the majority of magnetoelectronic devices operate in the GHz frequency range, it is critical to understand the high-frequency magnetization dynamics in these structures. In this thesis, we start with the static magnetic properties of FM thin films and their optimization via the field-sputtering process incorporating a specially designed in-situ electromagnet. We focus on the origins of anisotropy and hysteresis/coercivity in soft magnetic thin films, which are most relevant to magentic susceptibility and power dissipation in applications in the sub-GHz frequency regime, such as magnetic-core integrated inductors. Next we explore GHz magnetization dynamics in thin-film heterostructures, both in semi-infinite samples and confined geometries. All investigations are rooted in the Landau-Lifshitz-Gilbert (LLG) equation, the equation of motion for magnetization. The phenomenological Gilbert damping parameter in the LLG equation has been interpreted, since the 1970's, in terms of the electrical resistivity. We present the first interpretation of the size effect in Gilbert damping in single metallic FM films based on this electron theory of damping. The LLG equation is intrinsically nonlinear, which provides possibilities for rf signal processing. We analyze the frequency doubling effect at small-angle magnetization precession from the first-order expansion of the LLG equation, and demonstrate second harmonic generation from Ni81 Fe19 (Permalloy) thin film under ferromagnetic resonance (FMR), three orders of magnitude more efficient than in ferrites traditionally used in rf devices. Though the efficiency is less than in semiconductor devices, we provide field- and frequency-selectivity in the second harmonic generation. To address further the

  17. Suppression of conductivity deterioration of copper thin films by coating with atomic-layer materials

    NASA Astrophysics Data System (ADS)

    Cuong, Nguyen Thanh; Okada, Susumu

    2017-03-01

    Theoretical calculations are performed to explore the electronic structures and electron conducting properties of copper (Cu) thin films coated with graphene or h-boron-nitride (h-BN) layers. The Shockley surface states of Cu surfaces are preserved by the graphene and h-BN coatings which prevent the surface oxidation of Cu because of the weak interaction between the Cu surface and graphene or the h-BN layers. Furthermore, the Shockley surface states in Cu thin films possess quasi-two dimensional free-electron characteristics and exhibit a high conductivity of 1.62 × 107 (Ωm)-1 at room temperature. These hybrid structures may be suitable as interconnects in memory devices that can stably store data for long periods.

  18. Aspects of Integrating Functional Electroceramic Material in Multilayer Thin Films for Image Sensing: Modeling and Experiment

    NASA Astrophysics Data System (ADS)

    Matin, M. A.; Oishi, K.; Katsuta, A.; Akai, D.; Sawada, K.; Ishida, M.

    2015-07-01

    Using combined experimental and simulation techniques, this study addresses the critical stress for peeling off crucial layer(s) in multilayered epitaxial functional thin films on n-Si(001) substrate. The thickness of platinum (Pt) and PZT thin films was varied from 22 nm to 142 nm and 90 nm to 450 nm, respectively. Residual stresses were measured by analyzing captured fringes using Newton's rings technique. Advanced finite element computation was next conducted to predict the evolution of residual stresses. Induced stresses in Pt thin film were found to be decreased with decreasing the thickness of film from 72 nm to 40 nm. In contrast, stresses are shown to be decreased with increasing the thickness of PZT film from 240 nm to 450 nm. The design of the pyroelectric multilayered sensors was thus optimized employing finite element (FE) simulation. Computed stresses were found to correlate well with that observed in experiments. FE simulations can thus be used as a tool to a priori predict the evolution of residual stresses, which may allow a fail-safe design before the fabrication of pyroelectric image sensors.

  19. Combination of porous silica monolith and gold thin films for electrode material of supercapacitor

    NASA Astrophysics Data System (ADS)

    Pastre, A.; Cristini-Robbe, O.; Boé, A.; Raulin, K.; Branzea, D.; El Hamzaoui, H.; Kinowski, C.; Rolland, N.; Bernard, R.

    2015-12-01

    An all-solid electrical double layer supercapacitor was prepared, starting from a porous silica matrix coated with a gold thin-film. The metallization of the silica xerogel was performed by an original wet chemical process, based on the controlled growth of gold nanoparticles on two opposite faces of the silica monolith as a seed layer, followed by an electroless deposition of a continuous gold thin film. The thickness of the metallic thin film was assessed to be 700 nm. The silica plays two major roles: (1) it is used as a porous matrix for the gold electrode, creating a large specific surface area, and (2) it acts as a separator (non-metallized part of the silica). The silica monolith was soaked in a polyvinyl alcohol and phosphoric acid mixture which is used as polymer electrolyte. Capacitance effect was demonstrated by cyclic voltammetry experiments. The specific capacitance was found to be equal to 0.95 mF cm- 2 (9.5 F g-1). No major degradation occurs within more than 3000 cycles.

  20. Characteristic length of phonon transport within periodic nanoporous thin films and two-dimensional materials

    NASA Astrophysics Data System (ADS)

    Hao, Qing; Xiao, Yue; Zhao, Hongbo

    2016-08-01

    In the past two decades, phonon transport within nanoporous thin films has attracted enormous attention for their potential applications in thermoelectrics and thermal insulation. Various computational studies have been carried out to explain the thermal conductivity reduction within these thin films. Considering classical phonon size effects, the lattice thermal conductivity can be predicted assuming diffusive pore-edge scattering of phonons and bulk phonon mean free paths. Following this, detailed phonon transport can be simulated for a given porous structure to find the lattice thermal conductivity [Hao et al., J. Appl. Phys. 106, 114321 (2009)]. However, such simulations are intrinsically complicated and cannot be used for the data analysis of general samples. In this work, the characteristic length Λ P o r e of periodic nanoporous thin films is extracted by comparing the predictions of phonon Monte Carlo simulations and the kinetic relationship using bulk phonon mean free paths modified by Λ P o r e . Under strong ballistic phonon transport, Λ P o r e is also extracted by the Monte Carlo ray-tracing method for graphene with periodic nanopores. The presented model can be widely used to analyze the measured thermal conductivities of such nanoporous structures.

  1. Thin-film material research for low-cost solar collectors: Final report for the period March 1984-November 1986

    SciTech Connect

    Duffy, D.R.; Muller, T.K.; Hull, J.L.

    1986-12-01

    This report describes research on thin-film polymer materials for solar collectors. A thorough materials search and screening was performed of off-the-shelf polymer materials for use in the absorber and glazing of low-temperature, flat-plate collectors. A testing series was conducted on the most promising material candidates. Of the absorber material candidates, only the fluorocarbons successfully passed the tests. However, due to their high cost, they exceed the cost goals established. Efforts at ''engineering'' a material to fit the application were encouraging. The best material was a phenolic resin modified by addition of phenoxy and epoxy to make it more flexible. Evaluations were performed to compare pressurized versus trickle-type collector designs. The trickle-type design was selected. Subscale absorber sections were fabricated and tested to verify the trickle-type absorber concept. A large size field study was conducted to assess field layout and system flow control requirements of a trickle-type collector in comparison to a rigid metal, flat-plate collector. Somewhat larger piping sizes are required for good flow distribution, but cost reduction gains from the low-cost, thin-film absorber are still significant.

  2. Host thin films incorporating nanoparticles

    NASA Astrophysics Data System (ADS)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  3. Advanced thin film thermocouples

    NASA Technical Reports Server (NTRS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-01-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  4. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1990--15 January 1991

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1991-11-01

    Results and conclusion of Phase I of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe{sub 2} and CdTe solar cells. The kinetics of the formation of CuInSe{sub 2} by selenization with hydrogen selenide was investigated and a CuInSe{sub 2}/CdS solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe{sub 2} films and a cell efficiency of 7%. Detailed investigations of the open circuit voltage of CuInSe{sub 2} solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe{sub 2} thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe{sub 2} is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10% can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm{sup 2} are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  5. Combining a molecular modelling approach with direct current and high power impulse magnetron sputtering to develop new TiO2 thin films for antifouling applications

    NASA Astrophysics Data System (ADS)

    Guillot, Jérôme; Lecoq, Elodie; Duday, David; Puhakka, Eini; Riihimäki, Markus; Keiski, Riitta; Chemin, Jean-Baptiste; Choquet, Patrick

    2015-04-01

    The accumulation of crystallization deposits at the surface of heat exchangers results in the increase of the heat transfer resistance and a drastic loss of efficiency. Coating surfaces with a thin film can limit the scale-surface adhesion force and thus the fouling process. This study compares the efficiency of TiO2 layers exhibiting various crystalline planes and microstructures to reduce the kinetic of fouling. Molecular modelling with density functional theory is first carried out to determine the energy of CaCO3 deposition on anatase (1 0 1), (0 0 4), and (2 0 0) surfaces as well as on a rutile (1 0 1) one. TiO2 thin films (thickness < 1 μm) are then synthesized by direct current and high power impulse magnetron sputtering (dcMS and HiPIMS respectively) in order to tune their crystallinity and microstructure. Lastly, the induction time to grow CaCO3 crystals at the surface of such materials is determined. Comparing the modelling and fouling results allows to draw general trends on the potential anti-scaling properties of TiO2 crystallized under various forms. Until now, such a comparison combining a theoretical approach with experimental fouling tests has never been reported in the literature.

  6. Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

    SciTech Connect

    Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.; Cusco, R.; Artus, L.; Novikov, S. V.; Foxon, C. T.; Calleja, E.

    2008-08-01

    We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared results with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.

  7. Precision Photothermal Annealing of Nanoporous Gold Thin Films for the Microfabrication of a Single-chip Material Libraries

    SciTech Connect

    Harris, C. D.; Shen, N.; Rubenchik, A.; Demos, S. G.; Matthews, M. J.

    2015-06-30

    Single-chip material libraries of thin films of nanostructured materials are a promising approach for high throughput studies of structure-property relationship in the fields of physics and biology. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a nanostructured material of specific interest in both these fields. One attractive property of np-Au is its self-similar coarsening behavior by thermally induced surface diffusion. However, traditional heat application techniques for the modification of np-Au are bulk processes that cannot be used to generate a library of different pore sizes on a single chip. Laser micromachining offers an attractive solution to this problem by providing a means to apply energy with high spatial and temporal resolution. In the present study we use finite element multiphysics simulations to predict the effects of laser mode (continuous-wave vs. pulsed) and supporting substrate thermal conductivity on the local np-Au film temperatures during photothermal annealing and subsequently investigate the mechanisms by which the np-Au network is coarsening. Our simulations predict that continuous-wave mode laser irradiation on a silicon supporting substrate supports the widest range of morphologies that can be created through the photothermal annealing of thin film np-Au. Using this result we successfully fabricate a single-chip material library consisting of 81 np-Au samples of 9 different morphologies for use in increased throughput material interaction studies.

  8. Electrical and mechanical properties of molecularly functionalized mesoporous silica thin films

    NASA Astrophysics Data System (ADS)

    Singh, Amit Pratap

    Mesoporous silica (MPS) thin films are attractive for achieving low relative dielectric permittivity (low-kappa) interlayer isolation in integrated circuit wiring, but are susceptible to instabilities in electrical behavior due to water uptake and copper diffusion. This work investigates the electrical, chemical, and thermal instabilities, Cu diffusion, and adhesion of these materials for evaluating and enabling their use for applications as interlayer insulators in nanodevice wiring. Upon annealing Al/MPS/Si(001)/Al capacitors between 80 to 200°C, the flat-band voltage first increases, reaches a maximum, and then decreases. Concurrently, the initially observed deep depletion behavior is replaced by strong inversion. Subsequent air-exposure restores the preanneal C-V characteristics. Kinetics analyses reveal two thermally activated processes: proton generation through fissure of silanol bonds (activation energy Ea1 = 0.42 +/- 0.04 eV) and proton-induced depassivation of dangling bond traps (Ea2 = 0.54 +/- 0.05 eV) at the MPS/Si interface. We present an empirical model correlating these processes with the C-V characteristics. Further, we show that capping MPS films with a trimethyl-terminated organosilane irreversibly suppresses moisture-induced capacitance instabilities, and decreases the relative dielectric permittivity and Cu-induced leakage currents. Analysis of capacitance-voltage and current-voltage characteristics along with infrared spectroscopy shows that the trimethyl organosilanes inhibit hydrogen bonding of water molecules by rendering the dielectric surfaces hydrophobic. Fracture behavior and mechanical properties of pristine (i.e., un-functionalized MPS) and silylated mesoporous silica (SMPS) films were studied by four-point bend tests and nanoindentation measurements. Four-point bend measurements on Si/epoxy/Ti/Cu/MPS/Si stacks show that structures with un-silylated MPS films fracture at ˜3 J/m2, while those with SMPS films show a ˜50% lower

  9. Toward High Performance Integrated Semiconductor Micro and Nano Lasers Enabled by Transparent Conducting Materials: from Thick Structure to Thin Film

    NASA Astrophysics Data System (ADS)

    Ou, Fang

    Integrated semiconductor lasers working at the wavelength around 1.3 microm and 1.55 microm are of great interest for the research of photonic integrated circuit (PIC) since they are the crucial components for optical communications and many other applications. To satisfy the requirement of the next generation optical communication and computing systems, integrated semiconductor lasers are expected to have high device performance like very low lasing threshold, high output powers, high speed and possibility of being integrated with electronics. This dissertation focuses on the design and realization of InP based high performance electrically pumped integrated semiconductor lasers. In the dissertation, we first design the tall structure based electrically pumped integrated micro-lasers. Those lasers are capable of giving >10 mW output power with a moderate low threshold current density (0.5--5 kA/cm 2). Besides, a new enhanced radiation loss based coupler design is demonstrated to realize single directional output for curvilinear cavities. Second, the thin film structure based integrated semiconductor laser designs are proposed. Both structures use the side conduction geometry to enable the electrical injection into the thin film laser cavity. The performance enhancement of the thin film structure based lasers is analyzed compared to the tall structure. Third, we investigate the TCO materials. CdO deposited by PLD and In 2O3 deposited by IAD are studied from aspects of their physical, optical and electrical properties. Those materials can give a wide range of tunability in their conductivity (1--5000 S/cm) and optical transparency (loss 200--5000 cm-1), which is of great interest in realizing novel nanophotonic devices. In addition, the electrical contact properties of those materials to InP are also studied. Experiment result shows that both CdO and In2O3 can achieve good ohmic contact to n-InP with contact resistance as low as 10-6O·cm 2. At last, we investigate

  10. Thin Film Electrode Materials Li4Ti5O12 and LiCoO2 Prepared by Spray Pyrolysis Method

    NASA Astrophysics Data System (ADS)

    Takahashi, M.; Tani, J.; Kido, H.; Hayashi, A.; Tadanaga, K.; Tatsumisago, M.

    2011-05-01

    The Li4Ti5O12 and the LiCoO2 have been considered as promising candidates of electrode materials for all-solid-state lithium secondary batteries. The spray pyrolysis method is a useful economical technique to prepare various thicknesses of oxide films though have not been intensively studied for fabrication of thin film lithium batteries. Thin films of Li4Ti5O12 and LiCoO2 electrode materials about 100-400 nm were prepared on quartz and gold substrates by the spray pyrolysis method by using Liacac and, TiO(acac)4 or Co(acac)3 with DMF solvent as starting materials. Electric properties as electrode materials for lithium batteries were estimated by using 3 probe liquid cells with liquid electrolyte LiPF6 in EC-DMC and Li metal as reference and counter electrodes. Structure and morphology of the films were investigated by XRD and SEM. Crystalline Li4Ti5O12 and LiCoO2 thin films were found to be prepared over 700 °C of substrate temperature. Cyclic voltammograms of the Li4Ti5O12 electrode thin films showed sharp oxidation and reduction peaks around 1.6 and 1.5 V, respectively. Charge-discharge curves for both Li4Ti5O12 and LiCoO2 electrode thin films showed discharge plateaus around 1.4 and 3.8 V with about 80 mAhg-1 of capacity. These results showed that these electrode thin films prepared by the spray pyrolysis method are electrochemically active and spray pyrolysis method is a promising technique to prepare thin film electrode materials.

  11. Microstructural and Electrical Characterization of Silicon Carbide and Aluminum Nitride Thin Films Grown by Gas-Source Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Kern, Richard Scott

    1996-08-01

    Monocrystalline thin films, multilayered heterostructures and solid solutions of silicon carbide (SiC) and aluminum nitride (AlN) have been grown on alpha(6H) -SiC(0001) substrates by gas-source molecular beam epitaxy. Growth mechanisms, defect formation, donor and acceptor doping, metal-insulator-semiconductor diodes, pseudomorphic heterostructures and solid solutions in these materials have been studied. Monocrystalline films of beta(3C) -SiC(111) and alpha(6H)-SiC(0001) have been controllably deposited on the silicon face of 6H-SiC(0001) substrates. Polytype control was achieved via changes in the substrate orientation, substrate temperature and gas phase chemistry. Step flow growth was achieved on vicinal substrates at growth temperatures of at least 1350^circC using the SiH _4-rm C_2H_4 -H_2 system. Step bunching, cubic SiC nucleation and double positioning boundaries were observed at all temperatures when H_2 was removed from the system or the growth was performed at below 1350^circC. In both cases, growth rate was strongly dependent on temperature. Films doped using either a NH_3/H _2 mixture or pure N_2 were n-type; Al, p-type. Uniform, controllable doping levels between 10^{15} and 10^{19} cm ^{-3} were achieved for both polytypes. The measured mobility in the undoped 6H polytype, 434 cm ^2 V^{-1} s ^{-1}, is the highest reported in this polytype. Monocrystalline AlN was deposited using aluminum evaporated from a modified MBE effusion cell and either activated nitrogen derived from a compact electron cyclotron resonance plasma source or ammonia. Growth using each of the nitrogen sources was optimized with respect to substrate temperature, reactant flux and system pressure. In general, very thin films (<=q50 A) grown on vicinal 6H-SiC had a higher defect density than those grown on nominally on-axis substrates due to defect formation at or near the steps on the SiC surface. Full-width half maximum (FWHM) values of the (0002)_ {AlN} X-ray diffraction Bragg

  12. Development of High Band Gap Absorber and Buffer Materials for Thin Film Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Dwyer, Dan

    2011-12-01

    CuInGaSe2 (CIGS) device efficiencies are the highest of the thin film absorber materials (vs. CdTe, alpha-Si, CuInSe2). However, the band gap of the highest efficiency CIGS cells deviates from the expected ideal value predicted by models [1]. Widening the band gap to the theoretically ideal value is one way to increase cell efficiencies. Widening the band gap can be accomplished in two ways; by finding a solution to the Ga-related defects which limit the open circuit voltage at high Ga ratios, or by utilizing different elemental combinations to form an alternative high band gap photoactive Cu-chalcopyrite (which includes any combination of the cations Cu, Al, Ga, and In along with the anions S, Se, and Te). This thesis focuses on the second option, substituting aluminum for gallium in the chalcopyrite lattice to form a CuInAlSe2 (CIAS) film using a sputtering and selenization approach. Both sequential and co-sputtering of metal precursors is performed. Indium was found to be very mobile during both sputtering processes, with a tendency to diffuse to the film surface even when deposited as the base layer in a sequential sputtering process. Elemental diffusion was controlled to a degree using thicker Cu top layer in co-sputtering. The greater thermal conductivity of stainless steel foil (16 W/mK) vs. glass (0.9-1.3 W/mK) can also be used to limit indium diffusion, by keeping the substrate cooler during sputtering. In both sputtering methods aluminum is deposited oxygen-free by capping the film with a Cu capping layer in combination with controlling the indium diffusion. Selenization of metal precursor films is completed using two different techniques. The first is a thermal evaporation approach from a heated box source (method 1 -- reactive thermal evaporation (RTE-Se)). The second is batch selenization using a heated tube furnace (method 2 -- batch selenization). Some batch selenized precursors were capped with ˜ 1mum of selenium. In both selenization methods

  13. Role of molecular architecture on the vitrification of polymer thin films.

    PubMed

    Glynos, Emmanouil; Frieberg, Bradley; Oh, Hyunjoon; Liu, Ming; Gidley, David W; Green, Peter F

    2011-03-25

    We show that thin film star-shaped macromolecules exhibit significant differences in their average vitrification behavior, in both magnitude and thickness dependence, from their linear analogs. This behavior is dictated by a combination of their functionality and arm length. Additionally, the glass transition temperature at the free surface of a star-shaped molecule film may be higher than that of the interior, in contrast to their linear analogs where the opposite is true. These findings have implications for other properties, due largely to the origins, entropic, of this behavior.

  14. Temperature effect on elastic modulus of thin films and nanocrystals

    NASA Astrophysics Data System (ADS)

    Liang, Lihong; Li, Meizhi; Qin, Fuqi; Wei, Yueguang

    2013-02-01

    The stability of nanoscale devices is directly related to elasticity and the effect of temperature on the elasticity of thin films and nanocrystals. The elastic instability induced by rising temperature will cause the failure of integrated circuits and other microelectronic devices in service. The temperature effect on the elastic modulus of thin films and nanocrystals is unclear although the temperature dependence of the modulus of bulk materials has been studied for over half a century. In this paper, a theoretical model of the temperature-dependent elastic modulus of thin films and nanocrystals is developed based on the physical definition of the modulus by considering the size effect of the related cohesive energy and the thermal expansion coefficient. Moreover, the temperature effect on the modulus of Cu thin films is simulated by the molecular dynamics method. The results indicate that the elastic modulus decreases with increasing temperature and the rate of the modulus decrease increases with reducing thickness of thin films. The theoretical predictions based on the model are consistent with the results of computational simulations, semi-continuum calculations and the experimental measurements for Cu, Si thin films and Pd nanocrystals.

  15. Plasma-based ion implantation: a valuable technology for the elaboration of innovative materials and nanostructured thin films

    NASA Astrophysics Data System (ADS)

    Vempaire, D.; Pelletier, J.; Lacoste, A.; Béchu, S.; Sirou, J.; Miraglia, S.; Fruchart, D.

    2005-05-01

    Plasma-based ion implantation (PBII), invented in 1987, can now be considered as a mature technology for thin film modification. After a brief recapitulation of the principle and physics of PBII, its advantages and disadvantages, as compared to conventional ion beam implantation, are listed and discussed. The elaboration of thin films and the modification of their functional properties by PBII have already been achieved in many fields, such as microelectronics (plasma doping/PLAD), biomaterials (surgical implants, bio- and blood-compatible materials), plastics (grafting, surface adhesion) and metallurgy (hard coatings, tribology), to name a few. The major advantages of PBII processing lie, on the one hand, in its flexibility in terms of ion implantation energy (from 0 to 100 keV) and operating conditions (plasma density, collisional or non-collisional ion sheath), and, on the other hand, in the easy transferrability of processes from the laboratory to industry. The possibility of modifying the composition and physical nature of the films, or of drastically changing their physical properties over several orders of magnitude makes this technology very attractive for the elaboration of innovative materials, including metastable materials, and the realization of micro- or nanostructures. A review of the state of the art in these domains is presented and illustrated through a few selected examples. The perspectives opened up by PBII processing, as well as its limitations, are discussed.

  16. Thermostat for high temperature and transient characterization of thin film thermoelectric materials.

    PubMed

    Singh, Rajeev; Shakouri, Ali

    2009-02-01

    We have designed and fabricated a vacuum-insulated thermostat capable of measuring the thermoelectric properties of thin films from room temperature to 850 K. High speed Seebeck voltage transients are resolved to 200 ns with 63 dB dynamic range in order to directly measure thermoelectric device figure of merit. In-plane Seebeck coefficient probes measure voltage and temperature difference at identical locations with low parasitic contributions. In-plane electrical conductivity measurement is accomplished at high speed to avoid possible Seebeck voltage effect on van der Pauw measurements.

  17. Amorphous thin film ruthenium oxide as an electrode material for electrochemical capacitors

    SciTech Connect

    Jow, T.R.; Zheng, J.P.

    1995-12-31

    Ruthenium oxide thin films of an amorphous phase were successfully prepared on a titanium (Ti) substrate at temperatures below 160 C. The sol-gel process using metal alkoxide precursor in nonaqueous solvents was used to prepare these films. The preliminary results showed that a specific capacitance of 430 F/g can be achieved for amorphous ruthenium oxide electrode in sulfuric acid. Films prepared by this method are compared with the films prepared by the thermal decomposition of the aqueous ruthenium chloride solution at temperatures above 300 C. The specific capacitance, the crystalline structure, and the surface morphology of these films as a function of the preparation temperature were also discussed.

  18. Fundamental Studies of the Mechanical Behavior of Microelectronics Thin Film Materials

    DTIC Science & Technology

    1993-04-01

    Leibenguth, Appl. Phys. Leu., 52, 1605-1607 (1988). 19. C.G. Tuppen and CJ. Gibbings, to be published. 20. W. Hagen and H. Strunk , AR PL.Yhy.iL, IL 85...Noble, and I. F. Turlo in Thin Films: Stresses and Mechanical Proert-es Ikedited by M. F. Doerner, W. C. Oliver , G. M. Pharr, and F. R. Brotzen ( Mater...Stanford University (1991). 5. H. Alexander and P.Hassen, Solid State Physics, 22. 27 (1968). 6. W. Hagen and H. Strunk , AppL Phys., 12, 85 ( 1978 ). 7. R

  19. Potential for spin-based information processing in a thin-film molecular semiconductor

    NASA Astrophysics Data System (ADS)

    Warner, Marc; Din, Salahud; Tupitsyn, Igor; Morley, Gavin; Stoneham, Marshall; Gardener, Jules; Wu, Zhenlin; Fisher, Andrew; Heutz, Sandrine; Kay, Christopher; Aeppli, Gabriel

    2014-03-01

    Organic semiconductors are studied intensively for applications in electronics and optics, and even spin-based information technology, or spintronics. Fundamental quantities in spintronics are the population relaxation time (T1) and the phase memory time (T2) : T1 measures the lifetime of a classical bit, in this case embodied by a spin oriented either parallel or antiparallel to an external magnetic field, and T2 measures the corresponding lifetime of a quantum bit, encoded in the phase of the quantum state. Here we establish that these times are surprisingly long for a common, low-cost and chemically modifiable organic semiconductor, the blue pigment copper phthalocyanine, in easily processed thin-film form of the type used for device fabrication. At 5 K, a temperature reachable using inexpensive closed-cycle refrigerators, T1 and T2 are respectively 59 ms and 2.6 ms, and at 80 K, which is just above the boiling point of liquid nitrogen, they are respectively 10 ms and 1 ms, demonstrating that the performance of thin-film copper phthalocyanine is superior to that of single-molecule magnets over the same temperature range.

  20. Potential for spin-based information processing in a thin-film molecular semiconductor

    NASA Astrophysics Data System (ADS)

    Warner, Marc; Din, Salahud; Tupitsyn, Igor S.; Morley, Gavin W.; Stoneham, A. Marshall; Gardener, Jules A.; Wu, Zhenlin; Fisher, Andrew J.; Heutz, Sandrine; Kay, Christopher W. M.; Aeppli, Gabriel

    2013-11-01

    Organic semiconductors are studied intensively for applications in electronics and optics, and even spin-based information technology, or spintronics. Fundamental quantities in spintronics are the population relaxation time (T1) and the phase memory time (T2): T1 measures the lifetime of a classical bit, in this case embodied by a spin oriented either parallel or antiparallel to an external magnetic field, and T2 measures the corresponding lifetime of a quantum bit, encoded in the phase of the quantum state. Here we establish that these times are surprisingly long for a common, low-cost and chemically modifiable organic semiconductor, the blue pigment copper phthalocyanine, in easily processed thin-film form of the type used for device fabrication. At 5K, a temperature reachable using inexpensive closed-cycle refrigerators, T1 and T2 are respectively 59ms and 2.6μs, and at 80K, which is just above the boiling point of liquid nitrogen, they are respectively 10μs and 1μs, demonstrating that the performance of thin-film copper phthalocyanine is superior to that of single-molecule magnets over the same temperature range. T2 is more than two orders of magnitude greater than the duration of the spin manipulation pulses, which suggests that copper phthalocyanine holds promise for quantum information processing, and the long T1 indicates possibilities for medium-term storage of classical bits in all-organic devices on plastic substrates.

  1. Demonstration of 40 MHz thin-film electro-optic modulator using an organic molecular salt

    NASA Astrophysics Data System (ADS)

    Bhowmik, Achintya; Ahyi, Ayayi; Tan, Shida; Mishra, Alpana; Thakur, Mrinal

    2000-03-01

    Recently we reported the first demonstration of a single-pass thin-film electro-optic modulator based on a DAST single-crystal film.(M. Thakur, J. Xu, A. Bhowmik, and L. Zhou, Appl. Phys. Lett. 74, 635-637 (1999).) In this work, we report a larger modulation depth ( ~80%) and higher speed of operation. Excellent optical quality single-crystal films were prepared by a modified shear method.(M. Thakur and S. Meyler, Macromolecules 18, 2341 (1985); M. Thakur, Y. Shani, G. C. Chi, and K. O'Brien, Synth. Met. 28, D595 (1989).) Thin-film modulator was constructed by depositing electrodes across the polar axis. The beam from a Ti-Sapphire laser, tunable over 720-850 nm, was propagated perpendicular to the film surface. The modulated signal was detected using a fast photodetector, and displayed on a high bandwidth oscilloscope and a spectrum analyzer. The response was independent of the frequency of applied field over the measurement range (2 kHz - 40 MHz). A much higher speed (>100 GHz) of operation should be possible using these films. These modulators involve negligible losses compared to the waveguide structures, and have significant potential for a broad range of applications in high speed optical signal processing.

  2. Multiscale Modeling at Nanointerfaces: Polymer Thin Film Materials Discovery via Thermomechanically Consistent Coarse Graining

    NASA Astrophysics Data System (ADS)

    Hsu, David D.

    Due to high nanointerfacial area to volume ratio, the properties of "nanoconfined" polymer thin films, blends, and composites become highly altered compared to their bulk homopolymer analogues. Understanding the structure-property mechanisms underlying this effect is an active area of research. However, despite extensive work, a fundamental framework for predicting the local and system-averaged thermomechanical properties as a function of configuration and polymer species has yet to be established. Towards bridging this gap, here, we present a novel, systematic coarse-graining (CG) method which is able to capture quantitatively, the thermomechanical properties of real polymer systems in bulk and in nanoconfined geometries. This method, which we call thermomechanically consistent coarse-graining (TCCG), is a two-bead-per-monomer CG hybrid approach through which bonded interactions are optimized to match the atomistic structure via the Iterative Boltzmann Inversion method (IBI), and nonbonded interactions are tuned to macroscopic targets through parametric studies. We validate the TCCG method by systematically developing coarse-grain models for a group of five specialized methacrylate-based polymers including poly(methyl methacrylate) (PMMA). Good correlation with bulk all-atom (AA) simulations and experiments is found for the temperature-dependent glass transition temperature (Tg) Flory-Fox scaling relationships, self-diffusion coefficients of liquid monomers, and modulus of elasticity. We apply this TCCG method also to bulk polystyrene (PS) using a comparable coarse-grain CG bead mapping strategy. The model demonstrates chain stiffness commensurate with experiments, and we utilize a density-correction term to improve the transferability of the elastic modulus over a 500 K range. Additionally, PS and PMMA models capture the unexplained, characteristically dissimilar scaling of Tg with the thickness of free-standing films as seen in experiments. Using vibrational

  3. Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

    NASA Astrophysics Data System (ADS)

    Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

    2017-05-01

    Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

  4. Thin film scintillators

    NASA Astrophysics Data System (ADS)

    McDonald, Warren; McKinney, George; Tzolov, Marian

    2015-03-01

    Scintillating materials convert energy flux (particles or electromagnetic waves) into light with spectral characteristic matching a subsequent light detector. Commercial scintillators such as yttrium aluminum garnet (YAG) and yttrium aluminum perovskite (YAP) are commonly used. These are inefficient at lower energies due to the conductive coating present on their top surface, which is needed to avoid charging. We hypothesize that nano-structured thin film scintillators will outperform the commercial scintillators at low electron energies. We have developed alternative thin film scintillators, zinc tungstate and zinc oxide, which show promise for higher sensitivity to lower energy electrons since they are inherently conductive. Zinc tungstate films exhibit photoluminescence quantum efficiency of 74%. Cathodoluminescence spectroscopy was applied in transmission and reflection geometries. The comparison between the thin films and the YAG and YAP commercial scintillators shows much higher light output from the zinc tungstate and zinc oxide at electron energies less than 5 keV. Our films were integrated in a backscattered electron detector. This detector delivers better images than an identical detector with commercial YAG scintillator at low electron energies. Dr. Nicholas Barbi from PulseTor LLC, Dr. Anura Goonewardene, NSF Grants: #0806660, #1058829, #0923047.

  5. Thin Film Optical Coatings

    NASA Astrophysics Data System (ADS)

    Ristau, Detlev; Ehlers, Henrik

    Within the scientific conception of the modern world, thin film optical coatings can be interpreted as one-dimensional photonic crystals. In general, they are composed of a sequence of single layers which consist of different transparent dielectrics with a thickness in the nanometer scale according to the operation wavelength range. The major function of these photonic structures is to adapt the properties of an optical surface to the needs of specific applications. By application of optical thin film coatings with optimized designs, the spectral characteristics of a surface can be modified to practically any required transfer function for a certain wavelength range. For example, the Fresnel reflection of a lens or a laser window can be suppressed for a broad wavelength range by depositing an antireflective coating containing only a few single layers. On the basis of a layer stack with alternating high- and low-refracting materials, high reflectance values up to 99.999% can be achieved for a certain laser wavelength. In addition to these basic functions, optical coatings can realize a broad variety of spectral filter characteristics according to even extremely sophisticated demands in modern precision optics and laser technology. Moreover, recent developments in optical thin film technology provide the means to combine selected optical properties with other features concerning, for instance, the thermal, mechanical or chemical stability of a surface. The latest progress in ophthalmic coatings even includes the integration of self-cleaning, photoactive or anti-fogging functions in antireflective coatings on glass.

  6. Development of electron reflection suppression materials for improved thermionic energy converter performance using thin film deposition techniques

    SciTech Connect

    Islam, Mohammad; Inal, Osman T.; Luke, James R.

    2006-10-15

    Nonideal electrode surfaces cause significant degree of electron reflection from collector during thermionic converter operation. The effect of the collector surface structure on the converter performance was assessed through the development of several electron reflection suppression materials using various thin film deposition techniques. The double-diode probe method was used to compare the J-V characteristics of converters with polished and modified collector surfaces for emitter temperature and cesium vapor pressure in the ranges of 900-2000 K and 0.02-1.5 torr, respectively. The coadsorption of cesium and oxygen with respective partial vapor pressures of {approx}1.27 torr and a few microtorrs reduced the emitter work function to a minimum value of 0.99 eV. It was found that the collector surfaces with matte black appearance such as platinum black, voided nickel from radio-frequency plasma sputtering, and etched electroless Ni-P with craterlike pore morphology exhibited much better performance compared with polished collector surface. For these thin films, the increase in the maximum output voltage was up to 2.0 eV. For optimum performance with minimum work function and maximum saturation emission current density, the emitter temperature was in the range of 1100-1500 K, depending on the collector surface structure. The use of these materials in cylindrical converter design and/or in combination with hybrid mode triode configuration holds great potential in low and medium scale power generators for commercial use.

  7. Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film

    NASA Astrophysics Data System (ADS)

    Yang, C.; Souchay, D.; Kneiß, M.; Bogner, M.; Wei, H. M.; Lorenz, M.; Oeckler, O.; Benstetter, G.; Fu, Y. Q.; Grundmann, M.

    2017-07-01

    Thermoelectric devices that are flexible and optically transparent hold unique promise for future electronics. However, development of invisible thermoelectric elements is hindered by the lack of p-type transparent thermoelectric materials. Here we present the superior room-temperature thermoelectric performance of p-type transparent copper iodide (CuI) thin films. Large Seebeck coefficients and power factors of the obtained CuI thin films are analysed based on a single-band model. The low-thermal conductivity of the CuI films is attributed to a combined effect of the heavy element iodine and strong phonon scattering. Accordingly, we achieve a large thermoelectric figure of merit of ZT=0.21 at 300 K for the CuI films, which is three orders of magnitude higher compared with state-of-the-art p-type transparent materials. A transparent and flexible CuI-based thermoelectric element is demonstrated. Our findings open a path for multifunctional technologies combing transparent electronics, flexible electronics and thermoelectricity.

  8. Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film

    PubMed Central

    Yang, C.; Souchay, D.; Kneiß, M.; Bogner, M.; Wei, H. M.; Lorenz, M.; Oeckler, O.; Benstetter, G.; Fu, Y. Q.; Grundmann, M.

    2017-01-01

    Thermoelectric devices that are flexible and optically transparent hold unique promise for future electronics. However, development of invisible thermoelectric elements is hindered by the lack of p-type transparent thermoelectric materials. Here we present the superior room-temperature thermoelectric performance of p-type transparent copper iodide (CuI) thin films. Large Seebeck coefficients and power factors of the obtained CuI thin films are analysed based on a single-band model. The low-thermal conductivity of the CuI films is attributed to a combined effect of the heavy element iodine and strong phonon scattering. Accordingly, we achieve a large thermoelectric figure of merit of ZT=0.21 at 300 K for the CuI films, which is three orders of magnitude higher compared with state-of-the-art p-type transparent materials. A transparent and flexible CuI-based thermoelectric element is demonstrated. Our findings open a path for multifunctional technologies combing transparent electronics, flexible electronics and thermoelectricity. PMID:28681842

  9. Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film.

    PubMed

    Yang, C; Souchay, D; Kneiß, M; Bogner, M; Wei, H M; Lorenz, M; Oeckler, O; Benstetter, G; Fu, Y Q; Grundmann, M

    2017-07-06

    Thermoelectric devices that are flexible and optically transparent hold unique promise for future electronics. However, development of invisible thermoelectric elements is hindered by the lack of p-type transparent thermoelectric materials. Here we present the superior room-temperature thermoelectric performance of p-type transparent copper iodide (CuI) thin films. Large Seebeck coefficients and power factors of the obtained CuI thin films are analysed based on a single-band model. The low-thermal conductivity of the CuI films is attributed to a combined effect of the heavy element iodine and strong phonon scattering. Accordingly, we achieve a large thermoelectric figure of merit of ZT=0.21 at 300 K for the CuI films, which is three orders of magnitude higher compared with state-of-the-art p-type transparent materials. A transparent and flexible CuI-based thermoelectric element is demonstrated. Our findings open a path for multifunctional technologies combing transparent electronics, flexible electronics and thermoelectricity.

  10. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    PubMed

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  11. On-chip stress relaxation testing method for freestanding thin film materials.

    PubMed

    Coulombier, M; Guisbiers, G; Colla, M-S; Vayrette, R; Raskin, J-P; Pardoen, T

    2012-10-01

    A stress relaxation method for freestanding thin films is developed based on an on-chip internal stress actuated microtensile testing set-up. The on-chip test structures are produced using microfabrication techniques involving cleaning, deposition, lithography, and release. After release from the substrate, the test specimens are subjected to uniaxial tension. The applied load decays with the deformation taking place during relaxation. This technique is adapted to strain rates lower than 10(-6)∕s and permits the determination of the strain rate sensitivity of very thin films. The main advantage of the technique is that the relaxation tests are simultaneously performed on thousands of specimens, pre-deformed up to different strain levels, for very long periods of time without monopolizing any external mechanical loading equipment. Proof of concept results are provided for 205-nm-thick sputtered AlSi(0.01) films and for 350-nm-thick evaporated Pd films showing unexpectedly high relaxation at room temperature.

  12. Characterization of the Non-uniform Reaction in Chemically Amplified Calix[4]resorcinarene Molecular Resist Thin Films

    SciTech Connect

    V Prabhu; S Kang; R Kline; D DeLongchamp; D Fischer; W Wu; S Satija; P Bonnesen; J Sha; C Ober

    2011-12-31

    The ccc stereoisomer-purified tert-butoxycarbonyloxy-protected calix[4]resorcinarene molecular resists blended with photoacid generator exhibit a non-uniform photoacid-catalyzed reaction in thin films. The surface displays a reduced reaction extent, compared with the bulk, with average surface-layer thickness 7.0 {+-} 1.8 nm determined by neutron reflectivity with deuterium-labelled tert-butoxycarbonyloxy groups. Ambient impurities (amines and organic bases) are known to quench surface reactions and contribute, but grazing-incidence X-ray diffraction shows an additional effect that the protected molecular resists are preferentially oriented at the surface, whereas the bulk of the film displays diffuse scattering representative of amorphous packing. The surface deprotection reaction and presence of photoacid were quantified by near-edge X-ray absorption fine-structure measurements.

  13. Sequence control of phase separation and dewetting in PS/PVME blend thin films by changing molecular weight of PS

    NASA Astrophysics Data System (ADS)

    Xia, Tian; Qin, Yaping; Huang, Yajiang; Huang, Ting; Xu, Jianhui; Li, Youbing

    2016-11-01

    The morphology evolution mechanism of polystyrene (PS)/poly (vinyl methyl ether) (PVME) blend thin films with different PS molecular weights (Mw) was studied. It was found that the morphology evolution was closely related to the molecular weight asymmetry between PS and PVME. In the film where Mw(PS) ≈ Mw(PVME), dewetting happened at the interface between the bottom layer and substrate after SD phase separation. While in the film where Mw(PS) >> Mw(PVME), dewetting happened at the interface between the middle PS/PVME blend layer and bottom PVME layer near the substrate prior to phase separation. The different sequences of phase separation and dewetting and different interface for dewetting occurrence were studied by regarding the competitive effects of viscoelasticity contrast between polymer components and preferential wetting between PVME and the substrate. The viscoelastic nature of the PS component played a crucial role in the sequence of phase separation and dewetting.

  14. High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

    SciTech Connect

    Chiarella, F. Barra, M.; Ciccullo, F.; Cassinese, A.; Toccoli, T.; Aversa, L.; Tatti, R.; Verucchi, R.

    2014-04-07

    In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

  15. Characterization of the non-uniform reaction in chemically-amplified calix[4]resorcinarene molecular resist thin films

    SciTech Connect

    Prabhu, Vivek M.; Kang, Shuhui; Kline, R. Joseph; DeLongchamp, Dean M.; Fischer, Daniel A.; Wu, Wen-li; Satija, Sushil K.; Bonnesen, Peter V; Sha, Jing; Ober, Christoper K.

    2011-01-01

    The ccc stereoisomer-purified tert-butoxycarbonyloxy (t-Boc) protected calix[4]resorcinarene molecular resists blended with photoacid generator exhibit a non-uniform photoacid catalyzed reaction in thin films. The surface displays a reduced reaction extent, compared to the bulk, with average surface-layer thickness (7.0 1.8) nm determined by neutron reflectivity with deuterium-labeled t-Boc groups. Ambient impurities (amines and organic bases) are known to quench surface reactions and contribute, but grazing incidence X-ray diffraction shows an additional effect that the protected molecular resist are preferentially oriented at the surface, while the bulk of the film displayed diffuse scattering representative of amorphous packing. The surface deprotection reaction and presence of photoacid was quantified by near-edge X-ray absorption fine structure measurements.

  16. Magnetic and transport properties of epitaxial thin film MgFe2O4 grown on MgO (100) by molecular beam epitaxy.

    PubMed

    Wu, Han-Chun; Mauit, Ozhet; Coileáin, Cormac Ó; Syrlybekov, Askar; Khalid, Abbas; Mouti, Anas; Abid, Mourad; Zhang, Hong-Zhou; Abid, Mohamed; Shvets, Igor V

    2014-11-12

    Magnesium ferrite is a very important magnetic material due to its interesting magnetic and electrical properties and its chemical and thermal stability. Here we report on the magnetic and transport properties of epitaxial MgFe2O4 thin films grown on MgO (001) by molecular beam epitaxy. The structural properties and chemical composition of the MgFe2O4 films were characterized by X-Ray diffraction and X-Ray photoelectron spectroscopy, respectively. The nonsaturation of the magnetization in high magnetic fields observed for M (H) measurements and the linear negative magnetoresistance (MR) curves indicate the presence of anti-phase boundaries (APBs) in MgFe2O4. The presence of APBs was confirmed by transmission electron microscopy. Moreover, post annealing decreases the resistance and enhances the MR of the film, suggesting migration of the APBs. Our results may be valuable for the application of MgFe2O4 in spintronics.

  17. Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Fleischmann, C.; Lieten, R. R.; Hermann, P.; Hönicke, P.; Beckhoff, B.; Seidel, F.; Richard, O.; Bender, H.; Shimura, Y.; Zaima, S.; Uchida, N.; Temst, K.; Vandervorst, W.; Vantomme, A.

    2016-08-01

    Strained Ge1-xSnx thin films have recently attracted a lot of attention as promising high mobility or light emitting materials for future micro- and optoelectronic devices. While they can be grown nowadays with high crystal quality, the mechanism by which strain energy is relieved upon thermal treatments remains speculative. To this end, we investigated the evolution (and the interplay) of composition, strain, and morphology of strained Ge0.94Sn0.06 films with temperature. We observed a diffusion-driven formation of Sn-enriched islands (and their self-organization) as well as surface depressions (pits), resulting in phase separation and (local) reduction in strain energy, respectively. Remarkably, these compositional and morphological instabilities were found to be the dominating mechanisms to relieve energy, implying that the relaxation via misfit generation and propagation is not intrinsic to compressively strained Ge0.94Sn0.06 films grown by molecular beam epitaxy.

  18. Maximizing the dielectric response of molecular thin films via quantum chemical design.

    PubMed

    Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

    2014-12-23

    Developing high-capacitance organic gate dielectrics is critical for advances in electronic circuitry based on unconventional semiconductors. While high-dielectric constant molecular substances are known, the mechanism of dielectric response and the fundamental chemical design principles are not well understood. Using a plane-wave density functional theory formalism, we show that it is possible to map the atomic-scale dielectric profiles of molecule-based materials while capturing important bulk characteristics. For molecular films, this approach reveals how basic materials properties such as surface coverage density, molecular tilt angle, and π-system planarity can dramatically influence dielectric response. Additionally, relatively modest molecular backbone and substituent variations can be employed to substantially enhance film dielectric response. For dense surface coverages and proper molecular alignment, conjugated hydrocarbon chains can achieve dielectric constants of >8.0, more than 3 times that of analogous saturated chains, ∼2.5. However, this conjugation-related dielectric enhancement depends on proper molecular orientation and planarization, with enhancements up to 60% for proper molecular alignment with the applied field and an additional 30% for conformations such as coplanarity in extended π-systems. Conjugation length is not the only determinant of dielectric response, and appended polarizable high-Z substituents can increase molecular film response more than 2-fold, affording estimated capacitances of >9.0 μF/cm2. However, in large π-systems, polar substituent effects are substantially attenuated.

  19. Atmospheric-Pressure-Spray, Chemical- Vapor-Deposited Thin-Film Materials Being Developed for High Power-to- Weight-Ratio Space Photovoltaic Applications

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Harris, Jerry D.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Smith, Mark A.; Cowen, Jonathan E.

    2001-01-01

    The key to achieving high specific power (watts per kilogram) space photovoltaic arrays is the development of high-efficiency thin-film solar cells that are fabricated on lightweight, space-qualified substrates such as Kapton (DuPont) or another polymer film. Cell efficiencies of 20 percent air mass zero (AM0) are required. One of the major obstacles to developing lightweight, flexible, thin-film solar cells is the unavailability of lightweight substrate or superstrate materials that are compatible with current deposition techniques. There are two solutions for working around this problem: (1) develop new substrate or superstrate materials that are compatible with current deposition techniques, or (2) develop new deposition techniques that are compatible with existing materials. The NASA Glenn Research Center has been focusing on the latter approach and has been developing a deposition technique for depositing thin-film absorbers at temperatures below 400 C.

  20. Growth of Cr2CoGa and inverse Heusler thin films using Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Jamer, Michelle; Decapua, Matthew; Player, Gabriel; Heiman, Don

    Theoretical calculations have predicted the existence of inverse Heusler compounds that exhibit zero-moment magnetization while retaining their half-metallicity. These unique compounds have been labeled spin gapless semiconductors (SGS), where the density of states (DOS) can behave as a half-metal or gapless semiconductor. There is a special interest for zero-moment SGS compounds since traditional antiferromagnets cannot be spin-polarized. Such compounds are experimentally attractive for future spintronic devices due to their large magnetic transition temperature (400-800 K). This work focuses on zero-moment inverse Heusler compounds including Cr2CoGa and Mn3Al. Thin films have been grown using MBE and their magnetic, structural, and electrical properties of these compounds have been characterized by various techniques, including XMCD and magnetometry. The atomic moments are found to be large, but significant cancellations lead to small average moments. Supported by NSF Grant ECCS-1402738.

  1. On the Sn loss from thin films of the material system Cu-Zn-Sn-S in high vacuum

    SciTech Connect

    Weber, A.; Mainz, R.; Schock, H. W.

    2010-01-15

    In this paper the Sn loss from thin films of the material system Cu-Zn-Sn-S and the subsystems Cu-Sn-S and Sn-S in high vacuum is investigated. A combination of in situ x-ray diffractometry and x-ray fluorescence (XRF) at a synchrotron light source allowed identifying phases, which tend to decompose and evaporate a Sn-containing compound. On the basis of the XRF results a quantification of the Sn loss from the films during annealing experiments is presented. It can be shown that the evaporation rate from the different phases decreases according to the order SnS{yields}Cu{sub 2}SnS{sub 3}{yields}Cu{sub 4}SnS{sub 4}{yields}Cu{sub 2}ZnSnS{sub 4}. The phase SnS is assigned as the evaporating compound. The influence of an additional inert gas component on the Sn loss and on the formation of Cu{sub 2}ZnSnS{sub 4} thin films is discussed.

  2. On the Sn loss from thin films of the material system Cu-Zn-Sn-S in high vacuum

    NASA Astrophysics Data System (ADS)

    Weber, A.; Mainz, R.; Schock, H. W.

    2010-01-01

    In this paper the Sn loss from thin films of the material system Cu-Zn-Sn-S and the subsystems Cu-Sn-S and Sn-S in high vacuum is investigated. A combination of in situ x-ray diffractometry and x-ray fluorescence (XRF) at a synchrotron light source allowed identifying phases, which tend to decompose and evaporate a Sn-containing compound. On the basis of the XRF results a quantification of the Sn loss from the films during annealing experiments is presented. It can be shown that the evaporation rate from the different phases decreases according to the order SnS→Cu2SnS3→Cu4SnS4→Cu2ZnSnS4. The phase SnS is assigned as the evaporating compound. The influence of an additional inert gas component on the Sn loss and on the formation of Cu2ZnSnS4 thin films is discussed.

  3. One material, multiple functions: graphene/Ni(OH)2 thin films applied in batteries, electrochromism and sensors

    PubMed Central

    Neiva, Eduardo G. C.; Oliveira, Marcela M.; Bergamini, Márcio F.; Marcolino, Luiz H.; Zarbin, Aldo J. G.

    2016-01-01

    Different nanocomposites between reduced graphene oxide (rGO) and Ni(OH)2 nanoparticles were synthesized through modifications in the polyol method (starting from graphene oxide (GO) dispersion in ethylene glycol and nickel acetate), processed as thin films through the liquid-liquid interfacial route, homogeneously deposited over transparent electrodes and spectroscopically, microscopically and electrochemically characterized. The thin and transparent nanocomposite films (112 to 513 nm thickness, 62.6 to 19.9% transmittance at 550 nm) consist of α-Ni(OH)2 nanoparticles (mean diameter of 4.9 nm) homogeneously decorating the rGO sheets. As a control sample, neat Ni(OH)2 was prepared in the same way, consisting of porous nanoparticles with diameter ranging from 30 to 80 nm. The nanocomposite thin films present multifunctionality and they were applied as electrodes to alkaline batteries, as electrochromic material and as active component to electrochemical sensor to glycerol. In all the cases the nanocomposite films presented better performances when compared to the neat Ni(OH)2 nanoparticles, showing energy and power of 43.7 W h kg−1 and 4.8 kW kg−1 (8.24 A g−1) respectively, electrochromic efficiency reaching 70 cm2 C−1 and limit of detection as low as 15.4 ± 1.2 μmol L−1. PMID:27654065

  4. Current flow in a 3-terminal thin film contact with dissimilar materials and general geometric aspect ratios

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Hung, Derek M. H.; Lau, Y. Y.

    2013-02-01

    The current flow pattern, together with the contact resistance, is calculated analytically in a Cartesian 3-terminal thin film contact with dissimilar materials. The resistivities and the geometric dimensions in the individual contact members, as well as the terminal voltages, may assume arbitrary values. We show that the current flow patterns and the contact resistance may be conveniently decomposed into the even and odd solution. The even solution gives exclusively and totally the current flowing from the source to the gate. The odd solution gives exclusively and totally the current flowing from the source to the drain. Current crowding at the edges, and current partition in different regions are displayed. The analytic solutions are validated using a simulation code. The bounds on the variation of the contact resistance are given. This paper may be considered as the generalization of the transmission line model and the Kennedy-Murley model that were used extensively in the characterization of thin-film devices. For completeness, we include the general results for the cylindrical geometry, which are qualitatively similar to the even solution of the Cartesian geometry.

  5. One material, multiple functions: graphene/Ni(OH)2 thin films applied in batteries, electrochromism and sensors

    NASA Astrophysics Data System (ADS)

    Neiva, Eduardo G. C.; Oliveira, Marcela M.; Bergamini, Márcio F.; Marcolino, Luiz H.; Zarbin, Aldo J. G.

    2016-09-01

    Different nanocomposites between reduced graphene oxide (rGO) and Ni(OH)2 nanoparticles were synthesized through modifications in the polyol method (starting from graphene oxide (GO) dispersion in ethylene glycol and nickel acetate), processed as thin films through the liquid-liquid interfacial route, homogeneously deposited over transparent electrodes and spectroscopically, microscopically and electrochemically characterized. The thin and transparent nanocomposite films (112 to 513 nm thickness, 62.6 to 19.9% transmittance at 550 nm) consist of α-Ni(OH)2 nanoparticles (mean diameter of 4.9 nm) homogeneously decorating the rGO sheets. As a control sample, neat Ni(OH)2 was prepared in the same way, consisting of porous nanoparticles with diameter ranging from 30 to 80 nm. The nanocomposite thin films present multifunctionality and they were applied as electrodes to alkaline batteries, as electrochromic material and as active component to electrochemical sensor to glycerol. In all the cases the nanocomposite films presented better performances when compared to the neat Ni(OH)2 nanoparticles, showing energy and power of 43.7 W h kg-1 and 4.8 kW kg-1 (8.24 A g-1) respectively, electrochromic efficiency reaching 70 cm2 C-1 and limit of detection as low as 15.4 ± 1.2 μmol L-1.

  6. Molecular orientation in thin films of bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) on graphite studied by angle-resolved photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Hasegawa, Shinji; Tanaka, Shoji; Yamashita, Yoshiro; Inokuchi, Hiroo; Fujimoto, Hitoshi; Kamiya, Koji; Seki, Kazuhiko; Ueno, Nobuo

    1993-07-01

    Angle-resolved ultraviolet photoelectron spectra using synchrotron radiation were measured for oriented thin films of bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) on a cleaved highly oriented pyrolytic graphite (HOPG) surface. The observed takeoff angle dependence of the photoelectron intensity was analyzed by using the independent-atomic-center approximation and modified neglect of diatomic overlap molecular-orbital calculations. The calculated results agree well with the experimental ones. From the comparison between these results, the molecules in the thin film are estimated to lie flat with the inclination angle β<=10° to the HOPG surface. This analysis method is useful as a first step to a quantitative analysis for angular distribution of photoelectrons from thin films of large and complex organic molecules.

  7. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS

    SciTech Connect

    Jie Guan; Nguyen Minh

    2003-10-01

    This document summarizes the technical progress from April to September 2003 for the program, Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells, contract number DE-AC26-00NT40711. Characteristics of doped lanthanum gallate (LSGMF) powder suitable for thin electrolyte fabrication have been defined. Bilayers with thin LSGMF electrolyte supported on an anode were fabricated and the fabrication process was improved. Preliminary performance was characterized. High performance cathode material Sr{sub 0.5}Sm{sub 0.5}CoO{sub 3} has been down-selected and is being optimized by modifying materials characteristics and processing parameters. The selected cathode exhibited excellent performance with cathode polarization of {approx}0.23 ohm-cm{sup 2} at 600 C.

  8. High-throughput screening of thin-film semiconductor material libraries II: characterization of Fe-W-O libraries.

    PubMed

    Meyer, Robert; Sliozberg, Kirill; Khare, Chinmay; Schuhmann, Wolfgang; Ludwig, Alfred

    2015-04-13

    Metal oxides are promising materials for solar water splitting. To identify suitable materials within the ternary system FeWO, thin-film material libraries with combined thickness and compositional gradients were synthesized by combinatorial reactive magnetron sputtering. These libraries (>1000 different samples) were investigated by means of structural and functional high-throughput characterization techniques to establish correlations between composition, crystallinity, morphology, thickness, and photocurrent density in the compositional range between (Fe6 W94 )Ox and (Fe61 W39 )Ox . In addition to the well-known phase WO3 , the binary phase W5 O14 and the ternary phase Fe2 O6 W show enhanced photoelectrochemical activity. The highest photocurrent density of 65 μA cm(-2) was achieved for the composition (Fe15 W85 )Ox , which contains the W5 O14 phase and has a thickness of 1060 nm.

  9. Scale Dependence of the Mechanical Properties and Microstructure of Crustaceans Thin Films as Biomimetic Materials

    NASA Astrophysics Data System (ADS)

    Verma, Devendra; Qu, Tao; Tomar, Vikas

    2015-04-01

    The exoskeletons of crustacean species in the form of thin films have been investigated by several researchers to better understand the role played by the exoskeletal structure in affecting the functioning of species such as shrimps, crabs, and lobsters. These species exhibit similar designs in their exoskeleton microstructure, such as a Bouligand pattern (twisted plywood structure), layers of different thickness across cross section, change in mineral content through the layers, etc. Different parts of crustaceans exhibit a significant variation in mechanical properties based on the variation in the above-mentioned parameters. This change in mechanical properties has been analyzed by using imaging techniques such as scanning electron microscopy and energy-dispersive x-ray spectroscopy, and by using mechanical characterization techniques such as nanoindentation and atomic force microscopy. In this article, the design principles of these biological composites are discussed based on two shrimp species: Rimicaris exoculata and Pandalus platyceros.

  10. Electrochemical photovoltaic and photoelectrochemical storage cells based on II-VI polycrystalline thin film materials

    SciTech Connect

    Wallace, W.L.

    1983-06-01

    Research on electrochemical photovoltaic cells incorporating thin film CdSe and CdSe /SUB x/ Te /SUB 1-x/ photoanodes has progressed to the point where efficiencies of up to 7% can be achieved on small area electrodes using a polysulfide electrolyte. Higher efficiencies can be obtained in alternate electrolytes in significantly less stable systems. The major limitations on cell efficiency are associated with the open circuit voltage and fill factor. At present, the most promising photoelectrochemical storage system is an in situ three electrode cell which consists of an n-CdSe /SUB x/ Te /SUB 1-x/ photoanode and CoS counterelectrode in a sulfide/polysulfide electrolyte and a Sn/SnS storage electrode isolated in an aqueous sulfide electrolyte.

  11. Materials Study of NbN and Ta x N Thin Films for SNS Josephson Junctions

    DOE PAGES

    Missert, Nancy; Brunke, Lyle; Henry, Michael D.; ...

    2017-02-15

    We investigated properties of NbN and TaxN thin films grown at ambient temperatures on SiO2/Si substrates by reactive-pulsed laser deposition and reactive magnetron sputtering (MS) as a function of N2 gas flow. Both techniques produced films with smooth surfaces, where the surface roughness did not depend on the N2 gas flow during growth. High crystalline quality, (111) oriented NbN films with Tc up to 11 K were produced by both techniques for N contents near 50%. The low temperature transport properties of the TaxN films depended upon both the N2 partial pressure used during growth and the film thickness. Furthermore,more » the root mean square surface roughness of TaxN films grown by MS increased as the film thickness decreased down to 10 nm.« less

  12. Direct bandgap materials based on the thin films of SexTe100 − x nanoparticles

    PubMed Central

    2012-01-01

    In this study, we fabricated thin films of SexTe100 − x (x = 0, 3, 6, 9, 12, and 24) nanoparticles using thermal evaporation technique. The results obtained by X-ray diffraction show that the as-synthesized nanoparticles have polycrystalline structure, but their crystallinity decreases by increasing the concentration of Se. They were found to have direct bandgap (Eg), whose value increases by increasing the Se content. These results are completely different than those obtained in the films of SexTe100 − x microstructure counterparts. Photoluminescence and Raman spectra for these films were also demonstrated. The remarkable results obtained in these nanoparticles specially their controlled direct bandgap might be useful for the development of optical disks and other semiconductor devices. PMID:22978714

  13. Polarization dependence of Raman scattering from a thin film involving optical anisotropy theorized for molecular orientation analysis.

    PubMed

    Itoh, Yuki; Hasegawa, Takeshi

    2012-06-14

    Polarized Raman scattering from a thin film involving uniaxial optical anisotropy deposited on a dielectric substrate has analytically been theorized. The analyte film is modeled as a three-phase system (air/film/substrate) to calculate the electromagnetic fields of the incident and scattered light propagating across the system with an aid of the transfer matrix method to exactly take the optical anisotropy of the film into account. On the new theory, a methodology for molecular orientation analysis of an extended polymethylene chain in the film is proposed, which is employed for determination of the tilt angles of the chains in single- and five-monolayer Langmuir-Blodgett (LB) films of cadmium stearate deposited on a glass plate. The results agree well with those obtained by infrared spectroscopy, which confirms reliability of the present method.

  14. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

    PubMed

    Roy, Anupam; Guchhait, Samaresh; Dey, Rik; Pramanik, Tanmoy; Hsieh, Cheng-Chih; Rai, Amritesh; Banerjee, Sanjay K

    2015-04-28

    Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

  15. Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

    SciTech Connect

    Hirama, Kazuyuki Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Krockenberger, Yoshiharu; Yamamoto, Hideki

    2014-03-03

    We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp{sup 3}-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N{sub 2}{sup +} and Ar{sup +} ions is a key to selectively discriminate non-sp{sup 3} BN phases. At low acceleration voltage values, the sp{sup 2}-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.

  16. Oxygen vacancy induced photoluminescence and ferromagnetism in SrTiO3 thin films by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Xu, Wenfei; Yang, Jing; Bai, Wei; Tang, Kai; Zhang, Yuanyuan; Tang, Xiaodong

    2013-10-01

    SrTiO3 thin films were epitaxially grown on (100) SrTiO3 substrates using molecular beam epitaxy. The temperature for growth of the films was optimized, which was indicated by x-ray diffraction and further confirmed by microstructural characterization. Photoluminescence spectra show that oxygen-vacancy contributes to red and blue luminescence of oxygen-deficient post-annealed films, and a red shift was observed in blue region. On the other hand, ferromagnetism in film form SrTiO3 was observed from 5 K to 400 K and could be further enhanced with decreasing oxygen plasma partial pressure in annealing processes, which might be explained by the theory involving d0 magnetism related to oxygen-vacancy. From the cooperative investigations of optical and magnetic properties, we conclude that intrinsic defects, especially oxygen-vacancy, can induce and enhance luminescence and magnetism in SrTiO3 films.

  17. Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability.

    PubMed

    Liu, Ruirui; Zhou, Xiao; Zhai, Jiwei; Song, Jun; Wu, Pengzhi; Lai, Tianshu; Song, Sannian; Song, Zhitang

    2017-08-16

    A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb4-SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb2Se3 phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb4-SbSe thin film.

  18. Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials

    NASA Astrophysics Data System (ADS)

    Lee, Myung-Won; Pearson, Christopher; Moon, Tae Jung; Fisher, Alison L.; Petty, Michael C.

    2014-12-01

    We report on the effects of device processing conditions, and of changing the electrode materials, on the switching and negative differential resistance (NDR) behaviour of metal/organic thin film/metal structures. The organic material was an ambipolar molecule containing both electron transporting (oxadiazole) and hole transporting (carbazole) chemical groups. Switching and NDR effects are observed for device architectures with both electrodes consisting of aluminium; optimized switching behaviour is achieved for structures incorporating gold nanoparticles. If one of the Al electrodes is replaced by a higher work function metal or coated with an electron-blocking layer, switching and NDR are no longer observed. The results are consistent with a model based on the creation and destruction of Al filaments within the thin organic layer.

  19. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  20. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  1. Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications.

    PubMed

    Ehsan, Muhammad Ali; Peiris, T A Nirmal; Wijayantha, K G Upul; Olmstead, Marilyn M; Arifin, Zainudin; Mazhar, Muhammad; Lo, K M; McKee, Vickie

    2013-08-14

    Symmetrical and unsymmetrical dithiocarbamato pyridine solvated and non-solvated complexes of indium(III) with the general formula [In(S2CNRR')3]·n(py) [where py = pyridine; R,R' = Cy, n = 2 (1); R,R' = (i)Pr, n = 1.5 (2); NRR' = Pip, n = 0.5 (3) and R = Bz, R' = Me, n = 0 (4)] have been synthesized. The compositions, structures and properties of these complexes have been studied by means of microanalysis, IR and (1)H-NMR spectroscopy, X-ray single crystal and thermogravimetric (TG/DTG) analyses. The applicability of these complexes as single source precursors (SSPs) for the deposition of β-In2S3 thin films on fluorine-doped SnO2 (FTO) coated conducting glass substrates by aerosol-assisted chemical vapour deposition (AACVD) at temperatures of 300, 350 and 400 °C is studied. All films have been characterized by powder X-ray diffraction (PXRD) and energy dispersive X-ray analysis (EDX) for the detection of phase and stoichiometry of the deposit. Scanning electron microscopy (SEM) studies reveal that precursors (1)-(4), irrespective of different metal ligand design, generate comparable morphologies of β-In2S3 thin films at different temperatures. Direct band gap energies of 2.2 eV have been estimated from the UV-vis spectroscopy for the β-In2S3 films fabricated from precursors (1) and (4). The photoelectrochemical (PEC) properties of β-In2S3 were confirmed by recording the current-voltage plots under light and dark conditions. The plots showed anodic photocurrent densities of 1.25 and 0.65 mA cm(-2) at 0.23 V vs. Ag/AgCl for the β-In2S3 films made at 400 and 350 °C from the precursors (1) and (4), respectively. The photoelectrochemical performance indicates that the newly synthesised precursors are highly useful in fabricating β-In2S3 electrodes for solar energy harvesting and optoelectronic application.

  2. Molecular solution approach to synthesize electronic quality Cu2ZnSnS4 thin films.

    PubMed

    Yang, Wenbing; Duan, Hsin-Sheng; Cha, Kitty C; Hsu, Chia-Jung; Hsu, Wan-Ching; Zhou, Huanping; Bob, Brion; Yang, Yang

    2013-05-08

    Successful implementation of molecular solution processing from a homogeneous and stable precursor would provide an alternative, robust approach to process multinary compounds compared with physical vapor deposition. Targeting deposition of chemically clear, high quality crystalline films requires specific molecular structure design and solvent selection. Hydrazine (N2H4) serves as a unique and powerful medium, particularly to incorporate selected metallic elements and chalcogens into a stable solution as metal chalcogenide complexes (MCC). However, not all the elements and compounds can be easily dissolved. In this manuscript, we demonstrate a paradigm to incorporate previously insoluble transitional-metal elements into molecular solution as metal-atom hydrazine/hydrazine derivative complexes (MHHD), as exemplified by dissolving of the zinc constituent as Zn(NH2NHCOO)2(N2H4)2. Investigation into the evolution of molecular structure reveals the hidden roadmap to significantly enrich the variety of building blocks for soluble molecule design. The new category of molecular structures not only set up a prototype to incorporate other elements of interest but also points the direction for other compatible solvent selection. As demonstrated from the molecular precursor combining Sn-/Cu-MCC and Zn-MHHD, an ultrathin film of copper zinc tin sulfide (CZTS) was deposited. Characterization of a transistor based on the CZTS channel layer shows electronic properties comparable to CuInSe2, confirming the robustness of this molecular solution processing and the prospect of earth abundant CZTS for next generation photovoltaic materials. This paradigm potentially outlines a universal pathway, from individual molecular design using selected chelated ligands and combination of building blocks in a simple and stable solution to fundamentally change the way multinary compounds are processed.

  3. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  4. Thin film photovoltaic device

    DOEpatents

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  5. Molecular and thin film properties of cobalt half-sandwich compounds for optoelectronic application.

    PubMed

    Reinhardt, Maxwell; Dalgleish, Simon; Shuku, Yoshiaki; Reissig, Louisa; Matsushita, Michio M; Crain, Jason; Awaga, Kunio; Robertson, Neil

    2017-03-01

    The structure and electronic properties of a novel cobalt half sandwich complex of cyclopentadiene (Cp) and diaminonaphthalene (DAnap) [CpCo(DAnap)] are described and compared to the previously reported diaminobenzene derivative [CpCo(DAbnz)] in view of their potential for (opto)electronic device application. Both complexes show stable redox processes, tunable through the diaminoacene ligand, and show strong absorption in the visible region, with additional transitions stretching into the near infrared (NIR). CpCo(DAnap) crystallises with a particularly large unit cell (9301 Å(3)), comprising 32 molecules, with a gradual rotation over 8 molecules along the long c-axis. In the solid state the balance of the optical transitions in both complexes is reversed, with a suppression of the visible band and an enhancement of the NIR band, attributed to extensive intermolecular electronic interaction. In the case of CpCo(DAnap), highly crystalline thin films could be formed under physical vapor deposition, which show a photocurrent response stretching into the NIR, and p-type semiconductor behavior in field effect transistors with mobility values of the order 1 × 10(-4) cm(2) V(-1) s(-1). The device performance is understood through investigation of the morphology of the grown films.

  6. Ferredoxin molecular thin film with intrinsic switching mechanism for biomemory application.

    PubMed

    Yagati, Ajay Kumar; Kim, Sang-Uk; Min, Junhong; Choi, Jeong-Woo

    2010-05-01

    A biomemory device consisting of cysteine modified ferredoxin molecules which possess a memory effect via a charge transfer mechanism was developed. For achieving an efficient bioelectronic device, cysteine modified ferredoxin was developed by embodying cysteine residues in ferredoxin by site--directed mutagenesis method to directly coordinate with the gold (Au) surface without use of any additional linkers. The thin film formation of ferredoxin molecules on Au electrode is confirmed by surface plasmon resonance (SPR) spectroscopy and scanning tunneling microscope (STM). Cyclic voltammetry (CV) and open circuit potential amperometry (OCPA) methods were used to verify the memory switching characteristics of the fabricated device. The charge transfer between ferredoxin protein molecules and Au electrode enables a bi-stable electrical conductivity allowing the system to be used as a digital memory device. Data storage is achieved by applying redox voltages which are within the range of -500 mV. These results suggest that the proposed device has a function of memory and can be used for the construction of a nano-scale bioelectronic device.

  7. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    PubMed

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO.

  8. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  9. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS

    SciTech Connect

    Jie Guan; Atul Verma; Nguyen Minh

    2003-04-01

    This document summarizes the technical progress from September 2002 to March 2003 for the program, Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells, contract number DE-AC26-00NT40711. The causes have been identified for the unstable open circuit voltage (OCV) and low performance exhibited by the anode-supported lanthanum gallate based cells from the earlier development. Promising results have been obtained in the area of synthesis of electrolyte and cathode powders, which showed excellent sintering and densification at low temperatures. The fabrication of cells using tapecalendering process for anode-supported thin lanthanum gallate electrolyte cells and their performance optimization is in progress.

  10. Study of electrochemical properties of thin film materials obtained using plasma technologies for production of electrodes for pacemakers

    NASA Astrophysics Data System (ADS)

    Obrezkov, O. I.; Vinogradov, V. P.; Krauz, V. I.; Mozgrin, D. V.; Guseva, I. A.; Andreev, E. S.; Zverev, A. A.; Starostin, A. L.

    2016-09-01

    Studies of thin film materials (TFM) as coatings of tips of pacemaker electrodes implanted into the human heart have been performed. TFM coatings were deposited in vacuum by arc magnetron discharge plasma, by pulsed discharge of “Plasma Focus”, and by electron beam evaporation. Simulation of electric charge transfer to the heart in physiological blood- imitator solution and determination of electrochemical properties of the coatings were carried out. TFM of highly developed surface of contact with tissue was produced by argon plasma spraying of titanium powder with subsequent coating by titanium nitride in vacuum arc assisted by Ti ion implantation. The TFM coatings of pacemaker electrode have passed necessary clinical tests and were used in medical practice. They provide low voltage myocardium stimulation thresholds within the required operating time.

  11. Molecular fouling resistance of zwitterionic and amphiphilic initiated chemically vapor-deposited (iCVD) thin films

    SciTech Connect

    Yang, R; Goktekin, E; Wang, MH; Gleason, KK

    2014-08-08

    Biofouling is a universal problem in various applications ranging from water purification to implantable biomedical devices. Recent advances in surface modification have created a rich library of antifouling surface chemistries, many of which can be categorized into one of the two groups: hydrophilic surfaces or amphiphilic surfaces. We report the straightforward preparation of antifouling thin film coatings in both categories via initiated chemical vapor deposition. A molecular force spectroscopy-based method is demonstrated as a rapid and quantitative assessment tool for comparing the differences in antifouling characteristics. The fouling propensity of single molecules, as opposed to bulk protein solution or bacterial culture, is assessed. This method allows for the interrogation of molecular interaction without the complication resulted from protein conformational change or micro-organism group interactions. The molecular interaction follows the same trend as bacterial adhesion results obtained previously, demonstrating that molecular force probe is a valid method for the quantification and mechanistic examination of fouling. In addition, the molecular force spectroscopy-based method is able to distinguish differences in antifouling capability that is not resolvable by traditional static protein adsorption tests. To lend further insight into the intrinsic fouling resistance of zwitterionic and amphiphilic surface chemistries, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, advancing and receding water contact angles, and atomic force microscopy are used to elucidate the film properties that are relevant to their antifouling capabilities.

  12. Analysis of Molecular Orientation in Organic Semiconducting Thin Films Using Static Dynamic Nuclear Polarization Enhanced Solid-State NMR.

    PubMed

    Suzuki, Katsuaki; Kubo, Shosei; Aussenac, Fabien; Engelke, Frank; Fukushima, Tatsuya; Kaji, Hironori

    2017-10-09

    Molecular orientation in amorphous organic semiconducting thin film devices is an important issue affecting device performances. However, to date it has not been possible to analyze the "distribution" of the orientations. Although solid-state NMR (ssNMR) can provide information on the distribution of molecular orientations, the technique is limited because of the small amounts of sample in the devices and the low sensitivity of ssNMR. Here, we report the first application of dynamic nuclear polarization enhanced ssNMR (DNP-ssNMR) to orientational analysis of amorphous phenyldi(pyren-1-yl)phosphine oxide (POPy2). The 31P DNP-ssNMR spectra exhibited a sufficient signal-to-noise ratio to quantify the distribution of molecular orientations in amorphous films: the P=O axis of the vacuum-deposited and drop-cast POPy2 shows anisotropic and isotropic distribution, respectively. The different molecular orientations reflect the molecular origin of the different charge transport behaviors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. A thin film nitinol heart valve.

    PubMed

    Stepan, Lenka L; Levi, Daniel S; Carman, Gregory P

    2005-11-01

    In order to create a less thrombogenic heart valve with improved longevity, a prosthetic heart valve was developed using thin film nitinol (NiTi). A "butterfly" valve was constructed using a single, elliptical piece of thin film NiTi and a scaffold made from Teflon tubing and NiTi wire. Flow tests and pressure readings across the valve were performed in vitro in a pulsatile flow loop. Bio-corrosion experiments were conducted on untreated and passivated thin film nitinol. To determine the material's in vivo biocompatibility, thin film nitinol was implanted in pigs using stents covered with thin film NiTi. Flow rates and pressure tracings across the valve were comparable to those through a commercially available 19 mm Perimount Edwards tissue valve. No signs of corrosion were present on thin film nitinol samples after immersion in Hank's solution for one month. Finally, organ and tissue samples explanted from four pigs at 2, 3, 4, and 6 weeks after thin film NiTi implantation appeared without disease, and the thin film nitinol itself was without thrombus formation. Although long term testing is still necessary, thin film NiTi may be very well suited for use in artificial heart valves.

  14. Nanoporous TiO2/polyion thin-film-coated long-period grating sensors for the direct measurement of low-molecular-weight analytes.

    PubMed

    Yang, Rui-Zhu; Dong, Wen-Fei; Meng, Xiang; Zhang, Xu-Lin; Sun, Yun-Lu; Hao, Ya-Wei; Guo, Jing-Chun; Zhang, Wen-Yi; Yu, Yong-Sen; Song, Jun-Feng; Qi, Zhi-Mei; Sun, Hong-Bo

    2012-06-12

    We present novel nanoporous TiO(2)/polyion thin-film-coated long-period fiber grating (LPFG) sensors for the direct measurement of low-molecular-weight chemicals by monitoring the resonance wavelength shift. The hybrid overlay films are prepared by a simple layer-by-layer deposition approach, which is mainly based on the electrostatic interaction of TiO(2) nanoparticles and polyions. By the alternate immersion of LPFG into dispersions of TiO(2) nanoparticles and polyions, respectively, the so-formed TiO(2)/polyion thin film exhibits a unique nanoporous internal structure and has a relative higher refractive index than LPFG cladding. In particular, the porosity of the thin film reduces the diffusion coefficient and enhances the permeability retention of low-molecular-weight analytes within the porous film. The increases in the refractive index of the LPFG overlay results in a distinguished modulation of the resonance wavelength. Therefore, the detection sensitivity of LPFG sensors has been greatly improved, according to theoretical simulation. After the structure of the TiO(2)/polyion thin film was optimized, glucose solutions as an example with a low concentration of 10(-7) M was easily detected and monitored at room temperature.

  15. Vacancy related defects in thin film Pb(ZrTi)O{sub 3} materials

    SciTech Connect

    Krishnan, A.; Keeble, D.J.; Ramesh, R.; Warren, W.L.; Tuttle, B.A.; Pfeffer, R.L.; Nielsen, B.; Lynn, K.G.

    1994-12-31

    Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(ZrTi)O{sub 3} (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO{sub 2} electrodes, or by laser ablation with La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrodes. The RuO{sub 2} and La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La{sub 0.5}Sr{sub 0.5}CoO{sub 3} layers was observed indicating an increase in neutral or negatively charged open-volume defects.

  16. Some aspects of atom probe specimen preparation and analysis of thin film materials.

    PubMed

    Thompson, G B; Miller, M K; Fraser, H L

    2004-07-01

    Some of the factors in the preparation of atom probe specimens of metallic multilayer thin films have been investigated. A series of Ti/Nb multilayer films were sputtered deposited on n-doped Si [001] substrates with either 5 or 0.05Omega cm resistivity. Each wafer was pre-fabricated into a series of 5 microm x 5 microm x approximately 80 microm island posts by photolithography and reactive ion etching. Once the film was grown on the wafer, a Si post was mounted to either a tungsten or stainless steel fine tip needle that was mechanically crimped to a Cu tube for handling. The specimen was then loaded into a Focus Ion Beam instrument where a sacrificial Pt cap was in situ deposited onto the surface of the film and subsequently annularly ion milled into the appropriate geometry. The Pt cap was found to be an effective method in reducing Ga ion damage and implantation into the film during milling. The multilayers deposited on the high resistivity Si exhibited uncontrolled field evaporation which lead to high mass tails in the mass spectra, a reduction in the mass resolution, high background noise, propensity for "flash-failure", and a variation in the apparent layer thickness as the experiment elapsed in time. The multilayers deposited on lower resistivity Si did not suffer from these artifacts.

  17. Production of Brewster angle thin film polarizers using a ZrO2/SiO2 pair of materials.

    PubMed

    Zhupanov, V; Kozlov, I; Fedoseev, V; Konotopov, P; Trubetskov, M; Tikhonravov, A

    2017-02-01

    The production of polarizers for high-intensity applications based on a ZrO2/SiO2 pair of thin film materials is discussed. A special approach to accurate determination of a ZrO2 refractive index and the application of direct broadband optical monitoring enable obtaining good manufacturing results.

  18. Molecular layer deposition of functional thin films for advanced lithographic patterning.

    PubMed

    Zhou, Han; Bent, Stacey F

    2011-02-01

    Photoresist materials comprise one of the main challenges faced by lithography to meet the requirements of electronic device size scaling. Here we report for the first time the use of molecular layer deposition (MLD) to produce photoresist materials with controllable placement of functional moieties. Polyurea resists films are deposited by MLD using urea coupling reactions between 1,4-phenylene diisocyanate (PDIC) and ethylenediamine (ED) or 2,2'-(propane-2,2-diylbis(oxy))diethanamine (PDDE) monomers in a layer-by-layer fashion with a linear growth rate, allowing acid-labile groups to be incorporated into the film at well-controlled positions. The films are deposited with stoichiometric compositions and have highly uniform surface morphology as investigated using atomic force microscopy. We show that acid treatment can cleave the backbone of the polyurea film at positions where the acid-labile groups are embedded. We further show that after soaking the polyurea film with photoacid generator (PAG), it acts as a photoresist material and we present several UV patterning demonstrations. This approach presents a new way to make molecularly designed resist films for lithography.

  19. Molecularly imprinted protein recognition thin films constructed by controlled/living radical polymerization.

    PubMed

    Sasaki, Shogo; Ooya, Tooru; Kitayama, Yukiya; Takeuchi, Toshifumi

    2015-02-01

    We demonstrated the synthesis of molecularly imprinted polymers (MIPs) with binding affinity toward a target protein, ribonuclease A (RNase) by atom transfer radical polymerization (ATRP) of acrylic acid, acrylamide, and N,N'-methylenebisacrylamide in the presence of RNase. The binding activity of the MIPs was evaluated by surface plasmon resonance (SPR) of the MIP thin layers prepared on the gold-coated sensor chips. The MIPs prepared by ATRP (MIP-ATRP) had a binding affinity toward RNase with larger binding amount compared to MIPs prepared by conventional free radical polymerization methods (MIP-RP). Moreover, protein selectivity was evaluated using reference proteins (cytochrome c, myoglobin, and α-lactalbumin) and was confirmed in MIP-ATRP of optimum film thickness determined experimentally to be 15-30 nm; however, protein selectivity was not achieved in all MIP-RP. We have shown that ATRP is powerful technique for preparing protein recognition materials by molecular imprinting.

  20. Electric Field Tuning Molecular Packing and Electrical Properties of Solution-Shearing Coated Organic Semiconducting Thin Films

    DOE PAGES

    Molina-Lopez, Francisco; Yan, Hongping; Gu, Xiaodan; ...

    2017-01-17

    Recent improvements in solution-coated organic semiconductors (OSCs) evidence their high potential for cost-efficient organic electronics and sensors. Molecular packing structure determines the charge transport property of molecular solids. However, it remains challenging to control the molecular packing structure for a given OSC. Here, the application of alternating electric fields is reported to fine-tune the crystal packing of OSC solution-shearing coated at ambient conditions. First, a theoretical model based on dielectrophoresis is developed to guide the selection of the optimal conditions (frequency and amplitude) of the electric field applied through the solution-shearing blade during coating of OSC thin films. Next, electricmore » field-induced polymorphism is demonstrated for OSCs with both herringbone and 2D brick-wall packing motifs in 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and 6,13-bis(triisopropylsilylethynyl) pentacene, respectively. Favorable molecular packing can be accessible in some cases, resulting in higher charge carrier mobilities. In conclusion, this work provides a new approach to tune the properties of solution-coated OSCs in functional devices for high-performance printed electronics.« less

  1. A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS

    NASA Technical Reports Server (NTRS)

    Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor); Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor)

    2004-01-01

    A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

  2. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  3. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  4. Composite Thin Films

    SciTech Connect

    Martin, Peter M.

    2003-02-01

    Composites are one of more versatile types of materials, and can be characterized as multicomponent, or multiphase, mixtures. They can have unique structural, optical, electrical and magnetic properties not possible with a simple single component material. One of the best known composite materials is fiberglass, which is composed of glass fibers in a polymer matrix. This family of materials and thin films is highly disordered and inhomogeneous on a microstructural scale. Nanocrystalline and nanoclusters are now actively being investigated. The inhomogeneities can be fibers, clusters of atoms or molecules, grains with different crystalline phases (nanocrystalline clusters), inclusions with different electrical and magnetic properties. Note that the particles can have the same composition as the host material, but will have a different structural geometry. Carbon-carbon composites are a good example, where carbon fibers or threads are incorporated into carbonaceous resin

  5. Visualization of molecular packing and tilting domains and interface effects in tetracene thin films on H/Si(001)

    DOE PAGES

    Tersigni, Andrew; Sadowski, Jerzy T.; Qin, Xiao-Rong

    2017-03-27

    Visualizing molecular crystalline domains and influence of substrate defects are important in understanding the charge transport in organic thin film devices. Vacuum evaporated tetracene films of four monolayers on hydrogen-terminated Si(001)-2x1 substrate, as a prototypical system, have been studied with ex situ atomic force microscopy (AFM), transverse shear microscopy (TSM), friction force microscopy (FFM), and low-energy electron microscopy (LEEM). Two differently oriented in-plane lattice domains are found due to the symmetry of the substrate lattice, with no visible azimuthal twist between adjacent molecular layers in surface islands, indicating significant bulk-like crystallization in the film. Meanwhile, two types of subdomains aremore » observed inside of each in-plane lattice domain. The subdomains are anisotropic in shape, and their sizes and distribution are highly influenced by the substrate atomic steps. TSM and FFM measurements indicate that these subdomains result from molecule-tilt orderings within the bulk-like lattice domains. Lastly, TSM evidently shows a sensitivity to probe vertical molecule-tilt anisotropy for the molecular crystals, in addition to its known ability to map the lateral lattice orientations.« less

  6. Directed Ordering of Block Copolymer Thin Films with Flexible Interfaces for Functional Materials

    NASA Astrophysics Data System (ADS)

    Karim, Alamgir

    2012-02-01

    Orientation control of block copolymer (BCP) films is important for advanced technological applications. We present studies on directed ordering of block copolymer thin films on rigid substrates such as quartz to elastomeric PDMS and flexible Kapton substrates for tunable orientation of microphase separated poly (styrene) -- block -poly (methylmethacrylate) (PS-PMMA) cylinder and lamellae forming BCP films. Although the crosslinked PDMS has low surface energy, its surface energy can be tuned by exposing to UV-Ozone (UVO) that presents an opportunity to change BCP-PDMS interfacial energy to control BCP orientation across full range of orientation and film wettability. On the other hand, Kapton offers a near neutral surface for PS-PMMA without surface modification. Via a modified version of a dynamic thermal processing termed cold zone annealing-sharp (CZA-S), we obtain a wide range of orientations of the block copolymer films in unfilled and nanoparticle filled systems with an interest in photovoltaic systems. With CZA-S, vertical orientation of PS-PMMA can be obtained in films as thick as 1 micron with etchable PMMA domains for membrane applications. GISAXS characterization of these etched BCP membranes reveals up to 5 orders of diffraction indicating hexagonally packed vertical nanopores that extend throughout the film. Under similar thermal gradient, but static conditions, temporally stable vertical cylinders form only within a narrow zone of maximum temperature gradient. Primary CZA-S ordering mechanism thus involves propagating this narrow vertically oriented zone of BCP cylinders created at the maximum thermal gradient section, across the film. An optimal speed is needed since the process competes with preferential surface wetting dynamics that favors parallel orientation. These results are reproduced on large area flexible films on a prototype dynamic R2R assembly platform with incorporated multi-CZA gradient for thin (100 nm) BCP films currently.

  7. Work functions of hafnium nitride thin films as emitter material for field emitter arrays

    SciTech Connect

    Gotoh, Yasuhito Fujiwara, Sho; Tsuji, Hiroshi

    2016-05-15

    The work functions of hafnium nitride thin films prepared by radio-frequency magnetron sputtering were investigated in vacuum, before and after surface cleaning processes, with a view of improving the properties of as-fabricated field emitter arrays comprising hafnium nitride emitters. The measurement of the work function was first performed for the as-deposited films and then for films subjected to surface cleaning process, either thermal treatment or ion bombardment. Thermal treatment at a maximum temperature of 300 °C reduced the work function by 0.7 eV. Once the film was heated, the work function maintained the reduced value, even after cooling to room temperature. A little change in the work function was observed for the second and third thermal treatments. The ion bombardment was conducted by exposing the sample to a thin plasma for different sample bias conditions and processing times. When the sample was biased at −10 V, the work function decreased by 0.6 eV. The work function reduction became saturated in the early stage of the ion bombardment. When the sample was biased at −50 V, the work function exhibited different behaviors, that is, first it decreased rapidly and then increased in response to the increase in processing time. The lowest attainable work function was found to be 4.00 eV. It should be noted that none of the work function values reported in this paper were obtained using surfaces that were demonstrated to be free from oxygen contamination. The present results suggest that the current–voltage characteristics of a field emitter array can be improved by a factor of 25–50 by the examined postprocesses.

  8. Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Horsley, Kimberly Anne

    Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

  9. Attachment of lead wires to thin film thermocouples mounted on high temperature materials using the parallel gap welding process

    NASA Technical Reports Server (NTRS)

    Holanda, Raymond; Kim, Walter S.; Pencil, Eric; Groth, Mary; Danzey, Gerald A.

    1990-01-01

    Parallel gap resistance welding was used to attach lead wires to sputtered thin film sensors. Ranges of optimum welding parameters to produce an acceptable weld were determined. The thin film sensors were Pt13Rh/Pt thermocouples; they were mounted on substrates of MCrAlY-coated superalloys, aluminum oxide, silicon carbide and silicon nitride. The entire sensor system is designed to be used on aircraft engine parts. These sensor systems, including the thin-film-to-lead-wire connectors, were tested to 1000 C.

  10. Multifunctional carbon nanotubes/ruthenium purple thin films: preparation, characterization and study of application as sensors and electrochromic materials.

    PubMed

    Husmann, Samantha; Zarbin, Aldo J G

    2015-04-07

    This work reports the preparation, characterization and application as both electrochromic materials and electrochemical sensors of novel materials: carbon nanotubes/ruthenium purple nanocomposites. Using an innovative route based on a heterogeneous electrochemical reaction involving iron oxide species encapsulated within the cavities of the carbon nanotubes, the nanocomposite materials were obtained as transparent thin films deposited over transparent electrodes. Several experimental parameters related to the nanocomposite synthesis were evaluated and related to the characteristics of the obtained materials, such as morphology and stability. The films were characterized by UV-Vis and Raman spectroscopy, scanning electron microscopy, X-ray diffraction, cyclic voltammetry and UV-Vis and Raman spectroelectrochemistry. Four different materials were applied as H2O2 sensors and exhibited impressive analytical parameters, including a limit of detection of 1.27 nmol L(-1) and a sensitivity of 39.6 A M(-1) cm(-2). These nanocomposites also showed great electrochromic properties, with high stability and coloration efficiency over 95% maintained during stability cycles.

  11. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T.

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  12. Doping in zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Yang, Zheng

    Doping in zinc oxide (ZnO) thin films is discussed in this dissertation. The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) are discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 x 1018 to 1.8 x 1020 cm-3, the dominant PL line at 9 K changes from I1 (3.368--3.371 eV), to IDA (3.317--3.321 eV), and finally to I8 (3.359 eV). The dominance of I1, due to ionized-donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that IDA has characteristics of a donor-acceptor-pair transition, and use a detailed, quantitative analysis to argue that it arises from GaZn donors paired with Zn-vacancy (VZn) acceptors. In this analysis, the GaZn0/+ energy is well-known from two-electron satellite transitions, and the VZn0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p-type ZnO are presented. The Sb doping mechanisms and preference in ZnO are discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature TC were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ˜1019 cm -3, indicating a carrier-mediated mechanism for

  13. Effect of thin film confined between two dissimilar solids on interfacial thermal resistance.

    PubMed

    Liang, Zhi; Tsai, Hai-Lung

    2011-12-14

    A non-equilibrium molecular dynamics model is developed to investigate how a thin film confined between two dissimilar solids affects the thermal transport across the material interface. For two highly dissimilar (phonon frequency mismatched) solids, it is found that the insertion of a thin film between them can greatly enhance thermal transport across the material interface by a factor of 2.3 if the thin film has one of the following characteristics: (1) a multi-atom-thick thin film of which the phonon density of states (DOS) bridges the two different phonon DOSs for the solid on each side of the thin film; (2) a single-atom-thick film which is weakly bonded to the solid on both sides of the thin film. The enhanced thermal transport in the single-atom-thick film case is found mainly due to the increased inelastic scattering of phonons by the atoms in the film. However, for solid-solid interfaces with a relatively small difference in the phonon DOS, it is found that the insertion of a thin film may decrease the thermal transport.

  14. Molecular organization in MAPLE-deposited conjugated polymer thin films and the implications for carrier transport characteristics

    SciTech Connect

    Dong, Ban Xuan; Li, Anton; Strzalka, Joseph; Stein, Gila E.; Green, Peter F.

    2016-09-18

    The morphological structure of poly(3-hexylthiophene) (P3HT) thin films deposited by both Matrix Assisted Pulsed Laser Evaporation (MAPLE) and solution spin-casting methods are investigated. We found that the MAPLE samples possessed a higher degree of disorder, with random orientations of polymer crystallites along the side-chain stacking, π-π stacking, and conjugated backbone directions. Furthermore, the average molecular orientations and relative degrees of crystallinity of MAPLE-deposited polymer films are insensitive to the chemistries of the substrates onto which they were deposited; this is in stark contrast to the films prepared by the conventional spin-casting technique. In spite of the seemingly unfavorable molecular orientations and the highly disordered morphologies, the in-plane charge carrier transport characteristics of the MAPLE samples are comparable to those of spin-cast samples, exhibiting similar transport activation energies (56 meV versus 54 meV) to those reported in the literature for high mobility polymers.

  15. Molecular dynamics study on the effect of boundary heating rate on the phase change characteristics of thin film liquid

    SciTech Connect

    Hasan, Mohammad Nasim Morshed, A. K. M. Monjur Rabbi, Kazi Fazle Haque, Mominul

    2016-07-12

    In this study, theoretical investigation of thin film liquid phase change phenomena under different boundary heating rates has been conducted with the help of molecular dynamics simulation. To do this, the case of argon boiling over a platinum surface has been considered. The study has been conducted to get a better understanding of the nano-scale physics of evaporation/boiling for a three phase system with particular emphasis on the effect of boundary heating rate. The simulation domain consisted of liquid and vapor argon atoms placed over a platinum wall. Initially the whole system was brought to an equilibrium state at 90 K with the help of equilibrium molecular dynamics and then the temperature of the bottom wall was increased to a higher temperature (250 K/130 K) over a finite heating period. Depending on the heating period, the boundary heating rate has been varied in the range of 1600×10{sup 9} K/s to 8×10{sup 9} K/s. The variations of argon region temperature, pressure, net evaporation number with respect to time under different boundary heating rates have been determined and discussed. The heat fluxes normal to platinum wall for different cases were also calculated and compared with theoretical upper limit of maximum possible heat transfer to elucidate the effect of boundary heating rate.

  16. Structural and magnetic phase transitions in chromium nitride thin films grown by rf nitrogen plasma molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Alam, Khan; Disseler, Steven M.; Ratcliff, William D.; Borchers, Julie A.; Ponce-Pérez, Rodrigo; Cocoletzi, Gregorio H.; Takeuchi, Noboru; Foley, Andrew; Richard, Andrea; Ingram, David C.; Smith, Arthur R.

    2017-09-01

    A magnetostructural phase transition is investigated in single-crystal chromium nitride (CrN) thin films grown by rf plasma molecular beam epitaxy on MgO(001) substrates. While still within the vacuum environment following molecular beam epitaxy growth, in situ low-temperature scanning tunneling microscopy, and in situ variable low-temperature reflection high-energy electron diffraction are applied, revealing an atomically smooth and metallic CrN(001) surface, and an in-plane structural transition from 1 ×1 (primitive CrN unit cell) to √{2 }×√{2 }-R 45∘ with a transition temperature of (278 ±3 ) K, respectively. Ex situ temperature-dependent measurements using neutron diffraction are also performed, looking at the structural peaks and likewise revealing a first-order structural transition along the [111] out-of-plane direction, with transition temperatures of (268 ± 3) K. Turning to the magnetic peaks, neutron diffraction confirms a clear magnetic transition from paramagnetic at room temperature to antiferromagnetic at low temperatures with a sharp, first-order phase transition and a Néel temperature of (270 ±2 ) K or (280 ±2 ) K for two different films. In addition to the experimental measurements of structural and magnetic ordering, we also discuss results from first-principles theoretical calculations which explore various possible magnetostructural models.

  17. Molecular organization in MAPLE-deposited conjugated polymer thin films and the implications for carrier transport characteristics

    SciTech Connect

    Dong, Ban Xuan; Li, Anton; Strzalka, Joseph; Stein, Gila E.; Green, Peter F.

    2016-09-18

    The morphological structure of poly(3-hexylthiophene) (P3HT) thin films deposited by both Matrix Assisted Pulsed Laser Evaporation (MAPLE) and solution spin-casting methods are investigated. We found that the MAPLE samples possessed a higher degree of disorder, with random orientations of polymer crystallites along the side-chain stacking, π-π stacking, and conjugated backbone directions. Furthermore, the average molecular orientations and relative degrees of crystallinity of MAPLE-deposited polymer films are insensitive to the chemistries of the substrates onto which they were deposited; this is in stark contrast to the films prepared by the conventional spin-casting technique. In spite of the seemingly unfavorable molecular orientations and the highly disordered morphologies, the in-plane charge carrier transport characteristics of the MAPLE samples are comparable to those of spin-cast samples, exhibiting similar transport activation energies (56 meV versus 54 meV) to those reported in the literature for high mobility polymers.

  18. Molecular organization in MAPLE-deposited conjugated polymer thin films and the implications for carrier transport characteristics

    DOE PAGES

    Dong, Ban Xuan; Li, Anton; Strzalka, Joseph; ...

    2016-09-18

    The morphological structure of poly(3-hexylthiophene) (P3HT) thin films deposited by both Matrix Assisted Pulsed Laser Evaporation (MAPLE) and solution spin-casting methods are investigated. We found that the MAPLE samples possessed a higher degree of disorder, with random orientations of polymer crystallites along the side-chain stacking, π-π stacking, and conjugated backbone directions. Furthermore, the average molecular orientations and relative degrees of crystallinity of MAPLE-deposited polymer films are insensitive to the chemistries of the substrates onto which they were deposited; this is in stark contrast to the films prepared by the conventional spin-casting technique. In spite of the seemingly unfavorable molecular orientations andmore » the highly disordered morphologies, the in-plane charge carrier transport characteristics of the MAPLE samples are comparable to those of spin-cast samples, exhibiting similar transport activation energies (56 meV versus 54 meV) to those reported in the literature for high mobility polymers.« less

  19. Thermally driven smoothening of molecular thin films: Structural transitions in n-alkane layers studied in real-time

    SciTech Connect

    Pithan, Linus; Weber, Christopher; Zykov, Anton; Sauer, Katrein; Opitz, Andreas; Kowarik, Stefan; Meister, Eduard; Brütting, Wolfgang; Jin, Chenyu; Riegler, Hans

    2015-10-28

    We use thermal annealing to improve smoothness and to increase the lateral size of crystalline islands of n-tetratetracontane (TTC, C{sub 44}H{sub 90}) films. With in situ x-ray diffraction, we find an optimum temperature range leading to improved texture and crystallinity while avoiding an irreversible phase transition that reduces crystallinity again. We employ real-time optical phase contrast microscopy with sub-nm height resolution to track the diffusion of TTC across monomolecular step edges which causes the unusual smoothing of a molecular thin film during annealing. We show that the lateral island sizes increase by more than one order of magnitude from 0.5 μm to 10 μm. This desirable behavior of 2d-Ostwald ripening and smoothing is in contrast to many other organic molecular films where annealing leads to dewetting, roughening, and a pronounced 3d morphology. We rationalize the smoothing behavior with the highly anisotropic attachment energies and low surface energies for TTC. The results are technically relevant for the use of TTC as passivation layer and as gate dielectric in organic field effect transistors.

  20. Molecular dynamics study on the effect of boundary heating rate on the phase change characteristics of thin film liquid

    NASA Astrophysics Data System (ADS)

    Hasan, Mohammad Nasim; Morshed, A. K. M. Monjur; Rabbi, Kazi Fazle; Haque, Mominul

    2016-07-01

    In this study, theoretical investigation of thin film liquid phase change phenomena under different boundary heating rates has been conducted with the help of molecular dynamics simulation. To do this, the case of argon boiling over a platinum surface has been considered. The study has been conducted to get a better understanding of the nano-scale physics of evaporation/boiling for a three phase system with particular emphasis on the effect of boundary heating rate. The simulation domain consisted of liquid and vapor argon atoms placed over a platinum wall. Initially the whole system was brought to an equilibrium state at 90K with the help of equilibrium molecular dynamics and then the temperature of the bottom wall was increased to a higher temperature (250K/130K) over a finite heating period. Depending on the heating period, the boundary heating rate has been varied in the range of 1600×109 K/s to 8×109 K/s. The variations of argon region temperature, pressure, net evaporation number with respect to time under different boundary heating rates have been determined and discussed. The heat fluxes normal to platinum wall for different cases were also calculated and compared with theoretical upper limit of maximum possible heat transfer to elucidate the effect of boundary heating rate.

  1. Absolute photoluminescence quantum yield of molecular organic thin films: effects of doping with strongly fluorescent rubrene

    NASA Astrophysics Data System (ADS)

    Mattoussi, Hedi M.; Murata, Hideyuki; Merritt, Charles D.; Kafafi, Zakya H.

    1998-12-01

    We present data on the absolute photoluminescence quantum yield (phi) PL, for a set of pure and molecularly doped organic solid films. The procedure uses an integrating sphere to provide accurate measure of the photoluminescence efficiency for solid, sub-micron thickness, films. Host materials include a common hole transport compounds, N,N- dipheny-N,N-bis(3-methylphenyl)-1,1-biphenyl-4,4-diamine, TPD, and two metal chelates used as electron transport and/or light emitting materials, tris (8- hydroxyquinolinolato) aluminum (III), Alq3, and one of its methyl derivatives, tris (8- trimethylhydroxyquinolinolator) aluminum (III), Almq3, Tetraphenylnapthacene, or rubrene, is used as the dopant. A substantial increase in (phi) PL is measured with respect to the pure host. For example, the measured (phi) PL increases from 0.25 and 0.40 for pure Alq3 and Almq3, respectively, to near unity upon doping with rubrene at approximately 1 mol percent. The data are discussed within the framework of Foerster energy transfer.

  2. Surface plasmons on thin films

    NASA Astrophysics Data System (ADS)

    Fallesen, Todd; Jahncke, Cl; Hallen, Hd

    2004-03-01

    Surface plasmons on silver, gold and aluminum thin films are measured using a total internal reflection geometry. These measurements are made with a simple apparatus using a differential gear box which will be described. The surface plasmon resonances are compared with theoretical calculations for different film thicknesses and materials.

  3. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS

    SciTech Connect

    Jie Guan; Nguyen Minh

    2003-12-01

    This report summarizes the results of the work conducted under the program: ''Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells'' under contract number DE-AC26-00NT40711. The program goal is to advance materials and processes that can be used to produce economical, high-performance solid oxide fuel cells (SOFC) capable of achieving extraordinary high power densities at reduced temperatures. Under this program, anode-supported thin electrolyte based on lanthanum gallate (LSMGF) has been developed using tape-calendering process. The fabrication parameters such as raw materials characteristics, tape formulations and sintering conditions have been evaluated. Dense anode supported LSGMF electrolytes with thickness range of 10-50 micron have been fabricated. High performance cathode based on Sr{sub 0.5}Sm{sub 0.5}CoO{sub 3} (SSC) has been developed. Polarization of {approx}0.23 ohm-cm{sup 2} has been achieved at 600 C with Sr{sub 0.5}Sm{sub 0.5}CoO{sub 3}cathode. The high-performance SSC cathode and thin gallate electrolyte have been integrated into single cells and cell performance has been characterized. Tested cells to date generally showed low performance because of low cell OCVs and material interactions between NiO in the anode and lanthanum gallate electrolyte.

  4. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    SciTech Connect

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  5. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    SciTech Connect

    Hellman, F.

    1998-07-20

    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  6. A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

    NASA Astrophysics Data System (ADS)

    Adelifard, Mehdi; Darudi, Hosein

    2016-07-01

    There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

  7. Influence of substrate materials on the properties of CdTe thin films grown by hot-wall epitaxy

    NASA Astrophysics Data System (ADS)

    Bilevych, Ye.; Soshnikov, A.; Darchuk, L.; Apatskaya, M.; Tsybrii, Z.; Vuychik, M.; Boka, A.; Sizov, F.; Boelling, O.; Sulkio-Cleff, B.

    2005-02-01

    Growth of high-quality CdTe thin films by hot-wall epitaxy (HWE) under different temperature conditions and the control of their physical, electrical and structural properties have been examined by various ways. CdTe (1 1 0), Zn 0.04Cd 0.96Te (1 1 1), Hg 0.2Cd 0.8Te (1 1 1), Si (1 1 1) and BaF 2 (1 1 1) were used as substrates. The obtained films have the cut-off wavelength at 0.84-0.85 μm and the transmission of about 55-60% out of the fundamental absorption domain. The current-voltage investigations have shown that the contact properties strongly depend on the contact material and contact fabrication method and less depend on substrate materials. The film-specific resistances (4-7)×10 4 Ω cm were determined. The CdTe deposition (layer thickness about 1000 Å) on Cd xHg 1-xTe resulted in significant increase in photodiodes electrical parameters. All samples showed the crystalline structure according to the XRD data with strong influence on lattice mismatch between CdTe and substrate materials. Atomic force microscope (AFM) investigations have shown a smooth and defect-free surface with a roughness range of 15-100 nm for 50 μm of basic length.

  8. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics.

    PubMed

    Eisenberg, Daniel A; Yu, Mengjing; Lam, Carl W; Ogunseitan, Oladele A; Schoenung, Julie M

    2013-09-15

    Copper-indium-gallium-selenium-sulfide (CIGS) thin film photovoltaics are increasingly penetrating the market supply for consumer solar panels. Although CIGS is attractive for producing less greenhouse gas emissions than fossil-fuel based energy sources, CIGS manufacturing processes and solar cell devices use hazardous materials that should be carefully considered in evaluating and comparing net environmental benefits of energy products. Through this research, we present a case study on the toxicity hazards associated with alternative materials selection for CIGS manufacturing. We applied two numeric models, The Green Screen for Safer Chemicals and the Toxic Potential Indicator. To improve the sensitivity of the model outputs, we developed a novel, life cycle thinking based hazard assessment method that facilitates the projection of hazards throughout material life cycles. Our results show that the least hazardous CIGS solar cell device and manufacturing protocol consist of a titanium substrate, molybdenum metal back electrode, CuInS₂ p-type absorber deposited by spray pyrolysis, ZnS buffer deposited by spray ion layer gas reduction, ZnO:Ga transparent conducting oxide (TCO) deposited by sputtering, and the encapsulant polydimethylsiloxane.

  9. Holographic thin film analyzer

    NASA Technical Reports Server (NTRS)

    Williams, J. R.; Norden, B. N. (Inventor)

    1973-01-01

    A system for the analysis and measurement of thin films in which the light output of a laser is split into two beams is discribed. The first beam is focused to illuminate the entire area of a photographic plate and the second beam is colummated and directed through a relatively small portion of the photographic plate onto the sample with the film to be observed. The surface of the sample is positioned at a slight angle with respect to a plane normal to the second beam and the light reflected from the sample arrives back at the photographic plate in a region other than through which the second beam originally passes. By making two successive exposures during the deposition of material on the surface of the sample, holograms are recorded on the photographic plate. The plate is then developed and interference lines of the hologram provide a measurement of the film or material deposited between exposure.

  10. A molecular dynamics study on thin film liquid boiling characteristics under rapid linear boundary heating: Effect of liquid film thickness

    NASA Astrophysics Data System (ADS)

    Rabbi, Kazi Fazle; Tamim, Saiful Islam; Faisal, A. H. M.; Mukut, K. M.; Hasan, Mohammad Nasim

    2017-06-01

    This study is a molecular dynamics investigation of phase change phenomena i.e. boiling of thin liquid films subjected to rapid linear heating at the boundary. The purpose of this study is to understand the phase change heat transfer phenomena at nano scale level. In the simulation, a thin film of liquid argon over a platinum surface has been considered. The simulation domain herein is a three-phase system consisting of liquid and vapor argon atoms placed over a platinum wall. Initially the whole system is brought to an equilibrium state at 90 K and then the temperature of the bottom wall is increased to a higher temperature (250K) within a finite time interval. Four different liquid argon film thicknesses have been considered (3 nm, 4 nm, 5 nm and 6 nm) in this study. The boundary heating rate (40×109 K/s) is kept constant in all these cases. Variation in system temperature, pressure, net evaporation number, spatial number density of the argon region with time for different film thickness have been demonstrated and analyzed. The present study indicates that the pattern of phase transition may be significantly different (i.e. evaporation or explosive boiling) depending on the liquid film thickness. Among the four cases considered in the present study, explosive boiling has been observed only for the liquid films of 5nm and 6nm thickness, while for the other cases, evaporation take place.

  11. Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Yang, H. F.; Liu, Z. T.; Fan, C. C.; Yao, Q.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Shen, D. W.

    2016-08-01

    By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO3 and iso-polarity LaAlO3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO3 (111) substrate was more suitable than Nb-doped SrTiO3. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO3 based superlattices.

  12. Spectral analysis of nonequilibrium molecular dynamics: Spectral phonon temperature and local nonequilibrium in thin films and across interfaces

    NASA Astrophysics Data System (ADS)

    Feng, Tianli; Yao, Wenjun; Wang, Zuyuan; Shi, Jingjing; Li, Chuang; Cao, Bingyang; Ruan, Xiulin

    2017-05-01

    Although extensive experimental and theoretical works have been conducted to understand the ballistic and diffusive phonon transport in nanomaterials recently, direct observation of temperature and thermal nonequilibrium of different phonon modes has not been realized. Herein, we have developed a method within the framework of molecular dynamics to calculate the temperatures of phonons in both real and phase spaces. Taking silicon thin film and graphene as examples, we directly obtained the spectral phonon temperature (SPT) and observed the local thermal nonequilibrium between the ballistic and diffusive phonons. Such nonequilibrium also generally exists across interfaces and is surprisingly large, and it provides a significant additional thermal interfacial resistance mechanism besides phonon reflection. Our SPT results directly show that the vertical thermal transport across the dimensionally mismatched graphene-substrate interface is through the coupling between flexural acoustic phonons of graphene and the longitudinal phonons in the substrate with mode conversion. In the dimensionally matched interfaces, e.g., graphene-graphene junction and graphene-boron nitride planar interfaces, strong coupling occurs between the acoustic phonon modes on both sides, and the coupling decreases with interfacial mixing. The SPT method together with the spectral heat flux can eliminate the size effect of the thermal conductivity prediction induced from ballistic transport.

  13. Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

    SciTech Connect

    Yang, H. F.; Liu, Z. T.; Fan, C. C.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Yao, Q.; Shen, D. W.

    2016-08-15

    By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO{sub 3} thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO{sub 3} and iso-polarity LaAlO{sub 3} substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO{sub 3} (111) substrate was more suitable than Nb-doped SrTiO{sub 3}. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO{sub 3} based superlattices.

  14. Spinodal decomposition in thin films: Molecular-dynamics simulations of a binary Lennard-Jones fluid mixture

    NASA Astrophysics Data System (ADS)

    Das, Subir K.; Puri, Sanjay; Horbach, Jürgen; Binder, Kurt

    2006-03-01

    We use molecular dynamics (MD) to simulate an unstable homogeneous mixture of binary fluids (AB), confined in a slit pore of width D . The pore walls are assumed to be flat and structureless and attract one component of the mixture (A) with the same strength. The pairwise interactions between the particles are modeled by the Lennard-Jones potential, with symmetric parameters that lead to a miscibility gap in the bulk. In the thin-film geometry, an interesting interplay occurs between surface enrichment and phase separation. We study the evolution of a mixture with equal amounts of A and B, which is rendered unstable by a temperature quench. We find that A-rich surface enrichment layers form quickly during the early stages of the evolution, causing a depletion of A in the inner regions of the film. These surface-directed concentration profiles propagate from the walls towards the center of the film, resulting in a transient layered structure. This layered state breaks up into a columnar state, which is characterized by the lateral coarsening of cylindrical domains. The qualitative features of this process resemble results from previous studies of diffusive Ginzburg-Landau-type models [S. K. Das, S. Puri, J. Horbach, and K. Binder, Phys. Rev. E 72, 061603 (2005)], but quantitative aspects differ markedly. The relation to spinodal decomposition in a strictly two-dimensional geometry is also discussed.

  15. Mechanical response of nanocrystalline platinum via molecular dynamics: size effects in bulk versus thin-film samples

    NASA Astrophysics Data System (ADS)

    Kim, Hojin; Strachan, Alejandro

    2015-09-01

    We use large-scale molecular dynamics simulations to characterize the mechanical responses of nanocrystalline bulk and thin-film samples with average grain size ranging from 5 to 40 nm and at two strain rates. Our simulations show Hall-Petch maxima for both yield and flow stresses and for both sets of specimens. We find that the presence of free surface decreases both the yield and flow stresses and, interestingly, the Hall-Petch maximum for slabs occur at a larger grain size than for the bulk samples. A quantitative analysis of plastic slip on grain interiors and boundaries reveals that the shift in the maximum results from a combination of higher intergranular slip and weaker size dependence of dislocation activity in the slabs as compared with the bulk. Finally, increasing strain rate increases both yield and flow stresses and this rate effect is dominated by the plasticity involving full dislocations; plastic slip by partial dislocations and grain boundary processes exhibit weaker size effects.

  16. Evaluation of structure and material properties of RF magnetron sputter-deposited yttria-stabilized zirconia thin films

    NASA Astrophysics Data System (ADS)

    Piascik, Jeffrey Robert

    Over the past several decades, research has focused on utilizing ceramic materials in new technological applications. Their uses have been primarily in applications that involve high temperatures or corrosive environments. Unfortunately, ceramic materials have been limited especially since they can be brittle, failing in a sudden and catastrophic manner. A strong emphasis on understanding mechanical properties of ceramics and ways to improving their strength and toughness, has led to many new technologies. The present work is part of a larger research initiative that is aimed at using RF magnetron sputter deposition of yttria-stabilized zirconia to improve the fracture toughness of brittle substrates (more specifically dental ceramics). Partially-stabilized zirconia (PSZ) has been studied extensively, due to its high temperature stability and stress-induced tetragonal to monoclinic (T⇒M) martensitic phase transformation. RF magnetron sputtering was chosen as the deposition method because of its versatility, especially the ability to deposit oxides at low temperatures. Initial investigations focused on the development of process-structure-properties of YSZ sputtered deposited thin films. The YSZ thin films were deposited over a range of temperatures (22--300°C), pressures (5--25 mTorr), and gas compositions (Ar:O2 ratio). Initial studies characterized a select set of properties in relation to deposition parameters including: refractive index, structure, and film stress. X-ray Diffraction (XRD) showed that the films are comprised of mainly monoclinic and tetragonal crystal phases. The film refractive index determined by prism coupling, depends strongly on deposition conditions and ranged from 1.959 to 2.223. Wafer bow measurements indicate that the sputtered YSZ films can have initial stress ranging from 86 MPa tensile to 192 MPa compressive, depending on the deposition parameters. Exposure to ambient conditions (25°C, 75% relative humidity) led to large increase

  17. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  18. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  19. Thin film interference of colloidal thin films.

    PubMed

    Cong, Hailin; Cao, Weixiao

    2004-09-14

    A stairlike colloidal crystal thin film composed of poly(styrene-methyl methacrylate-acrylic acid) (P(St-MMA-AA)) monodispersed colloids was fabricated on an inclined silicon substrate. Different bright colors were observed on the various parts of the film with different layers as white light irradiated perpendicularly on it. The relationship between the colors and layers of the film was investigated and discussed according to the principle of thin film interference. On the basis of the phenomenon of thin film interference, a one-layer colloidal film having uniform color was researched and it would display diverse colors before and after swollen by styrene (St). A circular stairlike colloidal film was achieved to mimic the colors of the peacock tail feather.

  20. Thin-film assembly of diethanolamine-based lipidic material as potential gene carrier in mouse embryonic neural stem cells.

    PubMed

    Kusumoto, Ken-Ichi; Yamashita, Satoko; Nagata, Takahiro; Ido, Takeshi; Hamachi, Itaru; Akao, Tetsuyuki

    2009-10-01

    Understanding of lipidic materials used for gene delivery system is essential for the effective design and development of potential applications in basic and therapeutic research. This study aimed to evaluate the biological activity of totally synthesized ditetradecylacetyldiethanolaminetrimethylammonium (TMA-C2-DEA-C14) as gene carriers for neural stem cells. The transfer abilities were estimated by expressing green fluorescent protein (GFP) in mouse embryonic neural stem cells. Here, we demonstrate that lipidic assembly of TMA-C2-DEA-C14, which was self-organized by incubation in water for a month at 25 degrees C, can provide an efficient gene delivery with low cytotoxicity ( approximately 40% of GFP-expressed neural stem cells). However, when dispersed by ultrasonication, TMA-C2-DEA-C14 showed low effect ( approximately 4%). Moreover, electron microscopic analysis showed that TMA-C2-DEA-C14 assembly is characterized by thin-film structures with polygonal shapes ( approximately 2.7 mum), and after association with DNA, their structures dramatically changes to form liposome complexes that can effectively deliver DNA into the cellular cytoplasm of neural stem cells. Thus, TMA-C2-DEA-C14 assembly identified in this study was determined to have an effective activity as gene carriers for primary neural stem cells. Our findings suggest that this approach can serve as a novel model for the development of lipidic materials on nonviral gene delivery system.

  1. [Study on preparation of lanthanum-doped TiO2 nanometer thin film materials and its photocatalytic activity].

    PubMed

    Zheng, Huai-li; Tang, Ming-fang; Gong, Ying-kun; Deng, Xiao-jun; Wu, Bang-hua

    2003-04-01

    In this paper, lanthanum-doped TiO2 nanometer film materials coated on glass were prepared in Ti(OBu)4 precursor solutions by sol-gel processing. Transmittance and photocatalytic activity were respectively investigated and tested for these nanometer thin films prepared with different amount of lanthanum (La), different amount of polyethylene glycol (PEG), and different coating layer times. Some reactive mechanisms were also discussed. For one layer La-addition had little effect on the film transmissivity; but the photocatalytic activity was significantly improved due to La-addition. With increasing PEG, the transmittance of the film decreased for one layer film; but its photocatalytic activity did not rise. Increasing layer number did not affect the transmissivity of multilayer film. After coating two times, increasing layer number did not significantly improve the photocatalytic activity. The highest photocatalytic activity and best transmissivity were obtained for two layer TiO2 film when the dosage of lanthanum was 0.5 g and the dosage of polyethylene was 0.2 g in the precursor solutions. These materials will probably be used in the protection of environment, waste water treatment, and air purification.

  2. High-throughput characterization of Pt supported on thin film oxide material libraries applied in the oxygen reduction reaction.

    PubMed

    Schäfer, Dominik; Mardare, Cezarina; Savan, Alan; Sanchez, Miguel D; Mei, Bastian; Xia, Wei; Muhler, Martin; Ludwig, Alfred; Schuhmann, Wolfgang

    2011-03-15

    Thin film metal oxide material libraries were prepared by sputter deposition of nanoscale Ti/Nb precursor multilayers followed by ex situ oxidation. The metal composition was varied from 6 at.% Nb to 27 at.% Nb. Additionally, thin wedge-type layers of Pt with a nominal thickness gradient from 0 to 5 nm were sputter-deposited on top of the oxides. The materials libraries were characterized with respect to metallic film composition, oxide thickness, phases, electrical conductivity, Pt thickness, and electrochemical activity for the oxygen reduction reaction (ORR). Electrochemical investigations were carried out by cyclic voltammetry using an automated scanning droplet cell. For a nominal Pt thickness >1 nm, no significant dependence of the ORR activity on the Pt thickness or the substrate composition was observed. However, below that critical thickness, a strong decrease of the surface-normalized activity in terms of reduction currents and potentials was observed. For such thin Pt layers, the conductivity of the substrate seems to have a substantial impact on the catalytic activity. Results from X-ray photoelectron spectroscopy (XPS) measurements suggest that the critical Pt thickness coincides with the transition from a continuous Pt film into isolated particles at decreasing nominal Pt thickness. In the case of isolated Pt particles, the activity of Pt decisively depends on its ability to exchange electrons with the oxide layer, and hence, a dependence on the substrate conductivity is rationalized.

  3. XPS-nanocharacterization of organic layers electrochemically grafted on the surface of SnO2 thin films to produce a new hybrid material coating

    NASA Astrophysics Data System (ADS)

    Drevet, R.; Dragoé, D.; Barthés-Labrousse, M. G.; Chaussé, A.; Andrieux, M.

    2016-10-01

    This work presents the synthesis and the characterization of hybrid material thin films obtained by the combination of two processes. The electrochemical grafting of organic layers made of carboxyphenyl moieties is carried out from the reduction of a diazonium salt on tin dioxide (SnO2) thin films previously deposited on Si substrates by metal organic chemical vapor deposition (MOCVD). Since the MOCVD experimental parameters impact the crystal growth of the SnO2 layer (i.e. its morphology and its texturation), various electrochemical grafting models can occur, producing different hybrid materials. In order to evidence the efficiency of the electrochemical grafting of the carboxyphenyl moieties, X-ray Photoelectron Spectroscopy (XPS) is used to characterize the first nanometers in depth of the synthesized hybrid material layer. Then three electrochemical grafting models are proposed.

  4. Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film

    NASA Astrophysics Data System (ADS)

    Oh, Sang Chul; Jung, Ho Yong; Lee, Heon

    2011-06-01

    Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO2/Pt structure. The variation of the chemical composition of TiO2 in the metal/TiO2/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO2/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO2. This suggests that the oxidation reaction at the interface between the TE metal and TiO2 might cause the TE/TiO2/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO2 thin film is a primary factor affecting the resistive switching characteristics of TiO2-based Resistive Random Access Memory devices.

  5. [Capacitive sensor for environmental monitoring based on thin films of molecularly imprinted polymers. Computer modeling for optimization of the composition of synthetic analogs of bioreceptors].

    PubMed

    Serheieva, T A; Panasiuk-Dileni, T L; Pilets'ka, O V; Pilets'kyĭ, S A; Iel's'ka, H V

    2006-01-01

    A capacitive sensor for environmental monitoring based on thin films of desmetryn-selective molecularly imprinted polymer (MIP) was developed. The method of modification of gold electrodes with the thin film of herbicide-selective MIP using the grafting polymerization approach was developed. The method of computational modeling was used to optimize the composition of desmetryn-selective MIPs. It was shown that 2-acrylamido-2-methyl-1-propan-sulfonic acid is the optimal functional monomer for desmetryn. Formation of synthetic binding sites in MIPs was demonstrated to be determined by the binding energy between the template and functional monomers as well as the number of functional groups taking part in the recognition of the template molecule. Electrochemical processes occurring at the MIP-modified electrode were analyzed. The detection limit for desmetryn comprised 100 nM. High selectivity of the capacitive sensor towards structural analogues of desmetryn as well as high operational and storage stabilities was demonstrated.

  6. Structural and kinetic studies of metal hydride hydrogen storage materials using thin film deposition and characterization techniques

    NASA Astrophysics Data System (ADS)

    Kelly, Stephen Thomas

    Hydrogen makes an attractive energy carrier for many reasons. It is an abundant chemical fuel that can be produced from a wide variety of sources and stored for very long periods of time. When used in a fuel cell, hydrogen emits only water at the point of use, making it very attractive for mobile applications such as in an automobile. Metal hydrides are promising candidates for on-board reversible hydrogen storage in mobile applications due to their very high volumetric storage capacities---in most cases exceeding even that of liquid hydrogen. The United States Department of Energy (DOE) has set fuel system targets for an automotive hydrogen storage system, but as of yet no single material meets all the requirements. In particular, slow reaction kinetics and/or inappropriate thermodynamics plague many metal hydride hydrogen storage materials. In order to engineer a practical material that meets the DOE targets, we need a detailed understanding of the kinetic and thermodynamic properties of these materials during the phase change. In this work I employed sputter deposited thin films as a platform to study materials with highly controlled chemistry, microstructure and catalyst placement using thin film characterization techniques such as in situ x-ray diffraction (XRD) and neutron reflectivity. I observed kinetic limitations in the destabilized Mg2Si system due to the slow diffusion of the host Mg and Si atoms while forming separate MgH2 and Si phases. Conversely, I observed that the presence of Al in the Mg/Al system inhibits hydrogen diffusion while the host Mg and Al atoms interdiffuse readily, allowing the material to fall into a kinetic and/or thermodynamic trap by forming intermetallic compounds such as Mg17Al 12. By using in situ XRD to analyze epitaxial Mg films grown on (001) oriented Al2O3 substrates I observed hydride growth consistent with a model of a planar hydride layer growing into an existing metal layer. Subsequent film cycling changes the hydrogen

  7. In vitro studies of PEG thin films with different molecular weights deposited by MAPLE

    NASA Astrophysics Data System (ADS)

    Paun, Irina Alexandra; Ion, Valentin; Luculescu, Catalin-Romeo; Dinescu, Maria; Canulescu, Stela; Schou, Jørgen

    2012-10-01

    In this work, polyethylene glycol (PEG) films were produced by Matrix Assisted Pulsed Laser Evaporation (MAPLE). The possibility to tailor the properties of the films by means of polymer molecular weight was explored. The films of PEG of average molecular weights 400 Da, 1450 Da, and 10000 Da (PEG400, PEG1450, and PEG10000) were investigated in vitro, in media similar with those inside the body (phosphate buffer saline PBS with pH 7.4 and blood). The mass of the polymer did not change during this treatment, but the polymer molecular weight was found to strongly influence the films properties and their behavior in vitro. Thus, immersion in PBS induced swelling of the PEG films, which was more pronounced for PEG polymers of higher molecular weight. Prior to immersion in PBS, the PEG films of higher molecular weight were more hydrophilic, the water contact angles decreasing from ˜66 grd for PEG400 to ˜41 grd for PEG1450 and to ˜15 grd for PEG10000. The same trend was observed during immersion of the PEG films in PBS. Before immersion in PBS, the refractive index of the films increased from ˜1.43 for PEG400 to ˜1.48 for PEG1450 and to ˜1.68 for PEG10000. During immersion in PBS the refractive index decreased gradually, but remained higher for the PEG molecules of higher mass. Finally, blood compatibility tests showed that the PEG films of higher molecular weight were most compatible with blood.

  8. Ferroelectric Thin Films III, Symposium Held in San Francisco, California on April 13 - 16, 1993. Materials Research Society Symposium Proceedings, Volume 310

    DTIC Science & Technology

    1993-04-16

    prepare other materials such as LiTaO 3 was also examined. EXPERIMENTAL Likewise the previous process [9, 101, 0.5 M ethanol based precursor solutions for...to examine electrical properties of polycrystalline thin films prepared by the present process . The cleaned substrates were ethanol spin-dried...the ethanol based precursor showed lower refractive indices than LiNbO3 prepared from the methoxyethanol based 296 precursor. RTA processed LiNbO 3

  9. Interaction of Nano-Sized Materials With Polymer Chains in Polymer-Nanocomposite Thin Films-An AFM Perspective

    NASA Astrophysics Data System (ADS)

    Verma, Gaurav; Kaushik, Anupama; Ghosh, Anup K.

    2011-12-01

    Nanocomposite thin films were prepared with polyurethane as a matrix and organically modified clay as a filler. The interfacial interaction between the exfoliated clay nanoplatelets and the polymeric chains has been investigated by using Atomic Force Microscopy (AFM). The nanoclay platelets show a preferential association with the hard domains of polyurethane matrix on the surface of the thin films. The pendant hydroxyl group on the nanoplatelets attract the isocyanate of the polyisocyanate and a urethane group is formed. This leads to the `clouding' and `entwining' of the nanoplatelets by the hard segmental chains. This is the first visual evidence of nanomaterial filler and polymer matrix interaction and it could open up a spectrum of novel property achievements in nanocomposite thin films. Also the understanding of this interaction can lead to more controlled architecture of nanocomposites.

  10. Magnetic and transport properties of epitaxial thin film MgFe2O4 grown on MgO (100) by molecular beam epitaxy

    PubMed Central

    Wu, Han-Chun; Mauit, Ozhet; Coileáin, Cormac Ó; Syrlybekov, Askar; Khalid, Abbas; Mouti, Anas; Abid, Mourad; Zhang, Hong-Zhou; Abid, Mohamed; Shvets, Igor V.

    2014-01-01

    Magnesium ferrite is a very important magnetic material due to its interesting magnetic and electrical properties and its chemical and thermal stability. Here we report on the magnetic and transport properties of epitaxial MgFe2O4 thin films grown on MgO (001) by molecular beam epitaxy. The structural properties and chemical composition of the MgFe2O4 films were characterized by X-Ray diffraction and X-Ray photoelectron spectroscopy, respectively. The nonsaturation of the magnetization in high magnetic fields observed for M (H) measurements and the linear negative magnetoresistance (MR) curves indicate the presence of anti-phase boundaries (APBs) in MgFe2O4. The presence of APBs was confirmed by transmission electron microscopy. Moreover, post annealing decreases the resistance and enhances the MR of the film, suggesting migration of the APBs. Our results may be valuable for the application of MgFe2O4 in spintronics. PMID:25388355

  11. Thermal stability and relaxation mechanisms in compressively strained Ge{sub 0.94}Sn{sub 0.06} thin films grown by molecular beam epitaxy

    SciTech Connect

    Fleischmann, C.; Lieten, R. R.; Shimura, Y.; Vandervorst, W.; Hermann, P.; Hönicke, P.; Beckhoff, B.; Seidel, F.; Richard, O.; Bender, H.; Zaima, S.; Uchida, N.; Temst, K.; Vantomme, A.

    2016-08-28

    Strained Ge{sub 1-x}Sn{sub x} thin films have recently attracted a lot of attention as promising high mobility or light emitting materials for future micro- and optoelectronic devices. While they can be grown nowadays with high crystal quality, the mechanism by which strain energy is relieved upon thermal treatments remains speculative. To this end, we investigated the evolution (and the interplay) of composition, strain, and morphology of strained Ge{sub 0.94}Sn{sub 0.06} films with temperature. We observed a diffusion-driven formation of Sn-enriched islands (and their self-organization) as well as surface depressions (pits), resulting in phase separation and (local) reduction in strain energy, respectively. Remarkably, these compositional and morphological instabilities were found to be the dominating mechanisms to relieve energy, implying that the relaxation via misfit generation and propagation is not intrinsic to compressively strained Ge{sub 0.94}Sn{sub 0.06} films grown by molecular beam epitaxy.

  12. Donor-acceptor stacking arrangements in bulk and thin-film high-mobility conjugated polymers characterized using molecular modelling and MAS and surface-enhanced solid-state NMR spectroscopy.

    PubMed

    Chaudhari, Sachin R; Griffin, John M; Broch, Katharina; Lesage, Anne; Lemaur, Vincent; Dudenko, Dmytro; Olivier, Yoann; Sirringhaus, Henning; Emsley, Lyndon; Grey, Clare P

    2017-04-01

    Conjugated polymers show promising properties as cheap, sustainable and solution-processable semiconductors. A key challenge in the development of these materials is to determine the polymer chain structure, conformation and packing in both the bulk polymer and in thin films typically used in devices. However, many characterisation techniques are unable to provide atomic-level structural information owing to the presence of disorder. Here, we use molecular modelling, magic-angle spinning (MAS) and dynamic nuclear polarisation surface-enhanced NMR spectroscopy (DNP SENS) to characterise the polymer backbone group conformations and packing arrangement in the high-mobility donor-acceptor copolymer diketopyrrolo-pyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT). Using conventional (1)H and (13)C solid-state MAS NMR coupled with density functional theory calculations and molecular dynamics simulations, we find that the bulk polymer adopts a highly planar backbone conformation with a laterally-shifted donor-on-acceptor stacking arrangement. DNP SENS enables acquisition of (13)C NMR data for polymer films, where sensitivity is limiting owing to small sample volumes. The DNP signal enhancement enables a two-dimensional (1)H-(13)C HETCOR spectrum to be recorded for a drop-cast polymer film, and a (13)C CPMAS NMR spectrum to be recorded for a spin-coated thin-film with a thickness of only 400 nm. The results show that the same planar backbone structure and intermolecular stacking arrangement is preserved in the films following solution processing and annealing, thereby rationalizing the favourable device properties of DPP-DTT, and providing a protocol for the study of other thin film materials.

  13. Thin film production method and apparatus

    DOEpatents

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  14. Nanostructured organic and inorganic thin films with novel molecular recognition properties

    NASA Astrophysics Data System (ADS)

    Twardowski, Mariusz Z.

    An important theme in surface/interface science is the development of molecular level understandings of interactions at solid-liquid interfaces. The study of molecular recognition at such interfaces is well suited for modeling with self-assembled monolayers of alkanethiols (SAMs). For optimal studies, the SAM must be defect-free. Towards this end, a chemical treatment of the gold substrate was developed, consisting of a sequential treatment in "piranha" followed by dilute aqua regia. We found that the SAMs assembled on these treated substrates had exceptional barrier properties as measured by cyclic voltammetry(CV). X-ray diffraction(XRD) indicated that oxidative treatment induces significant bulk recrystallization of the metal. The dynamics suggest that recrystallization results from preferential dissolution of Au and/or impurities present at grain boundaries, leading to unpinning and merger into larger grains. Supported lipid layers were formed via fusion of unilamellar vesicles of 1,2-dimyristoyl-sn-glycero-3-phosphocholine(DMPC) to mixed SAMs containing ferrocene-functionalized hexadecanethiol chains(FcCO 2C16SH). The structures were characterized by several methods, including CV, ellipsometry and surface plasmon resonance(SPR). Studies revealed that the adsorbed DMPC strongly influences the interactions of the tethered ferrocene groups with secondary aqueous molecular redox probes. Permselective properties are seen. We believe that molecular scale defect structures in the adsorbed DMPC layer confer these molecular discrimination properties. Unilamellar vesicles of DMPC and varying quantities of 1,2-dimyristoyl-sn-glycero-3-[phospho-rac-(1-glycerol)(sodium salt)(DMPG) were used to deposit lipid bilayer assemblies on SAMs. The coverages of the layers were measured with SPR and decreased with increasing DMPG. The assembly is reversible and the lipid adlayer removable with ethanol. Effects of the adsorbed lipid layer on the electrochemical interactions of the

  15. A novel approach in controlling the conductivity of thin films using molecular layer deposition

    NASA Astrophysics Data System (ADS)

    Lushington, Andrew; Liu, Jian; Bannis, Mohammad N.; Xiao, Biwei; Lawes, Stephen; Li, Ruying; Sun, Xueliang

    2015-12-01

    Here we present a novel way to grow aluminum alkoxide films with tunable conductivity with molecular level accuracy with the use of molecular layer deposition (MLD). Alternating exposures of trimethylaluminum (TMA), ethylene glycol (EG), and terephthaloyl chloride (TC) are used to grow the aluminium alkoxide films. Control over film composition was accomplished by alternating cycles of EG and TC between cycles of TMA and EG. In this fashion the aluminum to carbon ratio can be accurately controlled. These films were then pyrolyzed under a reducing atmosphere to yield a conductive Al2O3/carbon composite. Raman spectroscopy determined that nanocrystalline sp2-graphitic carbon was formed following pyrolysis while sheet resistance measurements determined that conductivity of the film is directly related to aluminium-carbon ratio. To further elucidate the origin of conductivity within the film, synchrotron based XPS was performed.

  16. Molecular resolution friction microscopy of Cu phthalocyanine thin films on dolomite (104) in water.

    PubMed

    Nita, Paweł; Pimentel, Carlos; Luo, Feng; Milián-Medina, Begoña; Gierschner, Johannes; Pina, Carlos M; Gnecco, Enrico

    2014-07-21

    The reliability of ultrathin organic layers as active components for molecular electronic devices depends ultimately on an accurate characterization of the layer morphology and ability to withstand mechanical stresses on the nanoscale. To this end, since the molecular layers need to be electrically decoupled using thick insulating substrates, the use of AFM becomes mandatory. Here, we show how friction force microscopy (FFM) in water allows us to identify the orientation of copper(ii)phthalocyanine (CuPc) molecules previously self-assembled on a dolomite (104) mineral surface in ultra-high vacuum. The molecular features observed in the friction images show that the CuPc molecules are stacked in parallel rows with no preferential orientation with respect to the dolomite lattice, while the stacking features resemble well the single CuPc crystal structure. This proves that the substrate induction is low and makes friction force microscopy in water a suitable alternative to more demanding dynamic AFM techniques in ultra-high vacuum.

  17. Evaporation characteristics of thin film liquid argon in nano-scale confinement: A molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Hasan, Mohammad Nasim; Shavik, Sheikh Mohammad; Rabbi, Kazi Fazle; Haque, Mominul

    2016-07-01

    Molecular dynamics simulation has been carried out to explore the evaporation characteristics of thin liquid argon film in nano-scale confinement. The present study has been conducted to realize the nano-scale physics of simultaneous evaporation and condensation inside a confined space for a three phase system with particular emphasis on the effect of surface wetting conditions. The simulation domain consisted of two parallel platinum plates; one at the top and another at the bottom. The fluid comprised of liquid argon film at the bottom plate and vapor argon in between liquid argon and upper plate of the domain. Considering hydrophilic and hydrophobic nature of top and bottom surfaces, two different cases have been investigated: (i) Case A: Both top and bottom surfaces are hydrophilic, (ii) Case B: both top and bottom surfaces are hydrophobic. For all cases, equilibrium molecular dynamics (EMD) was performed to reach equilibrium state at 90 K. Then the lower wall was set to four different temperatures such as 110 K, 120 K, 130 K and 140 K to perform non-equilibrium molecular dynamics (NEMD). The variation of temperature and density as well as the variation of system pressure with respect to time were closely monitored for each case. The heat fluxes normal to top and bottom walls were estimated and discussed to illuminate the effectiveness of heat transfer in both hydrophilic and hydrophobic confinement at various boundary temperatures of the bottom plate.

  18. Growth, luminescence and magnetic properties of GaN:Er semiconductor thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dasari, K.; Wu, J.; Huhtinen, H.; Jadwisienczak, W. M.; Palai, R.

    2017-05-01

    We report on the growth, surface, luminescence and magnetic properties of 180 nm thick Er-doped GaN thin films grown by molecular beam epitaxy (MBE) on c-sapphire substrates with no buffer layer and with different Er concentrations. In situ reflection high-energy electron diffraction (RHEED) patterns revealed crystalline and uniform growth of the films. The x-ray diffraction (XRD) pattern showed c-axis-oriented growth. Atomic force microscopy (AFM) analysis showed enhancement of surface morphology and smoothness with increasing Er doping, which could be due to minimization of surface defects because of the gettering effect of the rare earth. Scanning area-dependent surface morphology analysis showed a power law dependence indicating the fractal nature of the surface, which is confirmed by the observation of a non-integer D (fractal dimension) value. X-ray photoluminescence spectroscopy (XPS) revealed the formation of a GaN:Er phase and ruled out the presence of Ga and Er metallic and native oxide phases. The semi-quantitative elemental composition of the films was determined using N 1s, Ga 2p3/2 and Er 4d photoemission lines. The Er concentration was estimated from the x-ray photoelectron spectra and found to be between 3.0 and 9.0 at.% (˜1021 atoms cm-3). Photoluminescence (PL) and cathodoluminescence (CL) studies showed visible emission and concentration quenching of Er3+ ions in agreement with reported results. Excitation of the Er3+ ion might be affected by charge trapping due to Er-doping-induced defect complexes. The magnetic measurements carried out by a superconducting quantum interference device (SQUID) showed a ferromagnetic-paramagnetic phase transition at low temperature, contrary to the reported room temperature ferromagnetism in metalorganic chemical vapor deposition (MOCVD)-grown GaN:Er thick films of 550 nm.

  19. Rapid identification of areas of interest in thin film materials libraries by combining electrical, optical, X-ray diffraction, and mechanical high-throughput measurements: a case study for the system Ni-Al.

    PubMed

    Thienhaus, S; Naujoks, D; Pfetzing-Micklich, J; König, D; Ludwig, A

    2014-12-08

    The efficient identification of compositional areas of interest in thin film materials systems fabricated by combinatorial deposition methods is essential in combinatorial materials science. We use a combination of compositional screening by EDX together with high-throughput measurements of electrical and optical properties of thin film libraries to determine efficiently the areas of interest in a materials system. Areas of interest are compositions which show distinctive properties. The crystallinity of the thus determined areas is identified by X-ray diffraction. Additionally, by using automated nanoindentation across the materials library, mechanical data of the thin films can be obtained which complements the identification of areas of interest. The feasibility of this approach is demonstrated by using a Ni-Al thin film library as a reference system. The obtained results promise that this approach can be used for the case of ternary and higher order systems.

  20. Glass-ceramic coating material for the CO2 laser based sintering of thin films as caries and erosion protection.

    PubMed

    Bilandžić, Marin Dean; Wollgarten, Susanne; Stollenwerk, Jochen; Poprawe, Reinhart; Esteves-Oliveira, Marcella; Fischer, Horst

    2017-09-01

    The established method of fissure-sealing using polymeric coating materials exhibits limitations on the long-term. Here, we present a novel technique with the potential to protect susceptible teeth against caries and erosion. We hypothesized that a tailored glass-ceramic material could be sprayed onto enamel-like substrates to create superior adhesion properties after sintering by a CO2 laser beam. A powdered dental glass-ceramic material from the system SiO2-Na2O-K2O-CaO-Al2O3-MgO was adjusted with individual properties suitable for a spray coating process. The material was characterized using X-ray fluorescence analysis (XRF), heating microscopy, dilatometry, scanning electron microscopy (SEM), grain size analysis, biaxial flexural strength measurements, fourier transform infrared spectroscopy (FTIR), and gas pycnometry. Three different groups of samples (each n=10) where prepared: Group A, powder pressed glass-ceramic coating material; Group B, sintered hydroxyapatite specimens; and Group C, enamel specimens (prepared from bovine teeth). Group B and C where spray coated with glass-ceramic powder. All specimens were heat treated using a CO2 laser beam process. Cross-sections of the laser-sintered specimens were analyzed using laser scanning microscopy (LSM), energy dispersive X-ray analysis (EDX), and SEM. The developed glass-ceramic material (grain size d50=13.1mm, coefficient of thermal expansion (CTE)=13.310(-6)/K) could be spray coated on all tested substrates (mean thickness=160μm). FTIR analysis confirmed an absorption of the laser energy up to 95%. The powdered glass-ceramic material was successfully densely sintered in all sample groups. The coating interface investigation by SEM and EDX proved atomic diffusion and adhesion of the glass-ceramic material to hydroxyapatite and to dental enamel. A glass-ceramic material with suitable absorption properties was successfully sprayed and laser-sintered in thin films on hydroxyapatite as well as on bovine enamel

  1. High-throughput screening of thin-film semiconductor material libraries I: system development and case study for Ti-W-O.

    PubMed

    Sliozberg, Kirill; Schäfer, Dominik; Erichsen, Thomas; Meyer, Robert; Khare, Chinmay; Ludwig, Alfred; Schuhmann, Wolfgang

    2015-04-13

    An automated optical scanning droplet cell (OSDC) enables high-throughput quantitative characterization of thin-film semiconductor material libraries. Photoelectrochemical data on small selected measurement areas are recorded including intensity-dependent photopotentials and -currents, potentiodynamic and potentiostatic photocurrents, as well as photocurrent (action) spectra. The OSDC contains integrated counter and double-junction reference electrodes and is fixed on a precise positioning system. A Xe lamp with a monochromator is coupled to the cell through a thin poly(methyl methacrylate) (PMMA) optical fiber. A specifically designed polytetrafluoroethylene (PTFE) capillary tip is pressed on the sample surface and defines through its diameter the homogeneously illuminated measurement area. The overall and wavelength-resolved irradiation intensities and the cell surface area are precisely determined and calibrated. System development and its performance are demonstrated by means of screening of a TiWO thin film. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Damage thresholds of thin film materials and high reflectors at 248 nm

    SciTech Connect

    Rainer, F.; Lowdermilk, W.H.; Milam, D.; Carniglia, C.K.; Hart, T.T.; Lichtenstein, T.L.

    1982-01-01

    Twenty-ns, 248-nm KrF laser pulses were used to measure laser damage thresholds for halfwave-thick layers of 15 oxide and fluoride coating materials, and for high reflectance coatings made with 13 combinations of these materials. The damage thresholds of the reflectors and single-layer films were compared to measurements of several properties of the halfwave-thick films to determine whether measurements of these properties of single-layer films to determine whether measurements of these properties of single-layer films were useful for identifying materials for fabrication of damage resistant coatings.

  3. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  4. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  5. 3-D photo-patterning of refractive index structures in photosensitive thin film materials

    DOEpatents

    Potter, Jr., Barrett George; Potter, Kelly Simmons

    2002-01-01

    A method of making a three-dimensional refractive index structure in a photosensitive material using photo-patterning. The wavelengths at which a photosensitive material exhibits a change in refractive index upon exposure to optical radiation is first determined and then a portion of the surface of the photosensitive material is optically irradiated at a wavelength at which the photosensitive material exhibits a change in refractive index using a designed illumination system to produce a three-dimensional refractive index structure. The illumination system can be a micro-lenslet array, a macroscopic refractive lens array, or a binary optic phase mask. The method is a single-step, direct-write procedure to produce a designed refractive index structure.

  6. Photorefractive polymers: Materials science, thin-film fabrication, and experiments in volume holography

    NASA Astrophysics Data System (ADS)

    McGee, David J.; Matlin, Mark D.

    2001-10-01

    When exposed to low power laser light, photorefractive materials can function as dynamic diffraction gratings, making them attractive for applications in holography and optical image processing. Conventional crystalline photorefractive materials are useful in demonstrations of basic nonlinear optical phenomena at the advanced undergraduate level, although the fabrication of such crystals is beyond the reach of most undergraduate facilities. Within the last five years, however, polymeric photorefractive materials have been developed that can be fabricated by collaborative teams of undergraduate physics and chemistry students. We have found that the study of photorefractive polymers provides an excellent framework to emphasize connections among optics, chemistry, and materials science at a level accessible to undergraduates. We provide an overview of photorefractive polymers, describe the fabrication of a typical photorefractive polymeric system, and discuss experiments in volume holography.

  7. Magnetostrictive thin films for microwave spintronics

    PubMed Central

    Parkes, D. E.; Shelford, L. R.; Wadley, P.; Holý, V.; Wang, M.; Hindmarch, A. T.; van der Laan, G.; Campion, R. P.; Edmonds, K. W.; Cavill, S. A.; Rushforth, A. W.

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications. PMID:23860685

  8. Magnetostrictive thin films for microwave spintronics.

    PubMed

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  9. Phase Formation and Oxidation Behavior at 500 °C in a Ni-Co-Al Thin-Film Materials Library.

    PubMed

    Naujoks, Dennis; Richert, Jerome; Decker, Peer; Weiser, Martin; Virtanen, Sannakaisa; Ludwig, Alfred

    2016-09-12

    The complete ternary system Ni-Co-Al was fabricated as a thin film materials library by combinatorial magnetron sputtering and was annealed subsequently in several steps in Ar and under atmospheric conditions at 500 °C. Ni-Co-Al is the base system for both Ni- and Co-based superalloys. Therefore, the phases occurring in this system and their oxidation behavior is of high interest. The Ni-Co-Al materials library was investigated using high-throughput characterization methods such as optical measurements, resistance screening, automated EDX, automated XRD, and XPS. From the obtained data a thin film phase diagram for the Ni-Co-Al system in its state after annealing at 500 °C in air was established. Furthermore, a surface oxide composition map of the full Ni-Co-Al system for oxidation at 500 °C was concluded. As a result, it could be shown that at 500 °C an amount of 10 at. % Al is necessary for a Ni-Co-Al thin film to produce a protective Al-oxide scale.

  10. Control of structural transition in FeSe1−xTex thin films by changing substrate materials

    PubMed Central

    Imai, Yoshinori; Sawada, Yuichi; Nabeshima, Fuyuki; Asami, Daisuke; Kawai, Masataka; Maeda, Atsutaka

    2017-01-01

    Iron chalcogenide superconductors FeSe1−xTex are important materials for investigating the relation be-tween the superconductivity and the orbital and/or electronic nematic order, because the end member material FeSe exhibits a structural transition without a magnetic phase transition. However, the phase separation occurs in the region of 0.1 ≤ x ≤ 0.4 for bulk samples, and it prevents the complete understanding of this system. Here, we report the successful fabrication of epitaxial thin films of FeSe1−xTex with 0 ≤ x ≤ 0.7, which includes the phase-separation region, on LaAlO3 substrates via pulsed laser deposition. In the temperature dependences of differential resistivity for these films with 0 ≤ x ≤ 0.3, the dip- or peak- anomalies, which are well-known to be originated from the structural transition in FeSebulk samples, are observed at the characteristic temperatures, T*. The doping-temperature (x–T) phase diagram of FeSe1−xTex films clearly shows that T* decreases with increasing x, and that Tc suddenly changes at a certain Te content where T* disappears, which turns out to be commonly observed for both films on LaAlO3 and CaF2. These indicate the importance of controlling the structural transition to achieve high Tc in iron chalcogenides. PMID:28429806

  11. Control of structural transition in FeSe1-xTex thin films by changing substrate materials

    NASA Astrophysics Data System (ADS)

    Imai, Yoshinori; Sawada, Yuichi; Nabeshima, Fuyuki; Asami, Daisuke; Kawai, Masataka; Maeda, Atsutaka

    2017-04-01

    Iron chalcogenide superconductors FeSe1-xTex are important materials for investigating the relation be-tween the superconductivity and the orbital and/or electronic nematic order, because the end member material FeSe exhibits a structural transition without a magnetic phase transition. However, the phase separation occurs in the region of 0.1 ≤ x ≤ 0.4 for bulk samples, and it prevents the complete understanding of this system. Here, we report the successful fabrication of epitaxial thin films of FeSe1-xTex with 0 ≤ x ≤ 0.7, which includes the phase-separation region, on LaAlO3 substrates via pulsed laser deposition. In the temperature dependences of differential resistivity for these films with 0 ≤ x ≤ 0.3, the dip- or peak- anomalies, which are well-known to be originated from the structural transition in FeSebulk samples, are observed at the characteristic temperatures, T*. The doping-temperature (x-T) phase diagram of FeSe1-xTex films clearly shows that T* decreases with increasing x, and that Tc suddenly changes at a certain Te content where T* disappears, which turns out to be commonly observed for both films on LaAlO3 and CaF2. These indicate the importance of controlling the structural transition to achieve high Tc in iron chalcogenides.

  12. Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD

    PubMed Central

    Hsu, Hui-Lin; Leong, Keith R.; Teng, I-Ju; Halamicek, Michael; Juang, Jenh-Yih; Jian, Sheng-Rui; Qian, Li; Kherani, Nazir P.

    2014-01-01

    The integration of photonic materials into CMOS processing involves the use of new materials. A simple one-step metal-organic radio frequency plasma enhanced chemical vapor deposition system (RF-PEMOCVD) was deployed to grow erbium-doped amorphous carbon thin films (a-C:(Er)) on Si substrates at low temperatures (<200 °C). A partially fluorinated metal-organic compound, tris(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate) Erbium(+III) or abbreviated Er(fod)3, was incorporated in situ into a-C based host. Six-fold enhancement of Er room-temperature photoluminescence at 1.54 μm was demonstrated by deuteration of the a-C host. Furthermore, the effect of RF power and substrate temperature on the photoluminescence of a-C:D(Er) films was investigated and analyzed in terms of the film structure. Photoluminescence signal increases with increasing RF power, which is the result of an increase in [O]/[Er] ratio and the respective erbium-oxygen coordination number. Moreover, photoluminescence intensity decreases with increasing substrate temperature, which is attributed to an increased desorption rate or a lower sticking coefficient of the fluorinated fragments during film growth and hence [Er] decreases. In addition, it is observed that Er concentration quenching begins at ~2.2 at% and continues to increase until 5.5 at% in the studied a-C:D(Er) matrix. This technique provides the capability of doping Er in a vertically uniform profile. PMID:28788530

  13. On the dynamic and static manifestation of molecular absorption in thin films probed by a microcantilever

    SciTech Connect

    Finot, Eric; Fabre, Arnaud; Passian, Ali; Thundat, Thomas

    2014-03-01

    Mechanical resonators shaped like microcantilevers have been demonstrated as a platform for very sensitive detection of chemical and biological analytes. However, its use as an analytical tool will require fundamental understanding of the molecular absorption-induced effects in the static and dynamic sensor response. The effect of absorption-induced surface stress on the microcantilever response is here investigated using palladium hydride formation. It is shown that the resonance and deformation states of the cantilever monitored simultaneously exhibit excellent correlation with the phase of the hydride formation. However, the associated frequency shifts and quasistatic bending are observed to be independent during solid solution phase. Importantly, absorption-induced changes in the elastic parameters of the palladium film are found to play a dominant role in the static and dynamic response. The presented results help in discerning the parameters that control the cantilever response as well as the relationships between these parameters.

  14. Mechanism of Charge Transport in Cobalt and Iron Phthalocyanine Thin Films Grown by Molecular Beam Epitaxy

    SciTech Connect

    Kumar, Arvind; Samanta, Soumen; Singh, Ajay; Debnath, A. K.; Aswal, D. K.; Gupta, S. K.

    2011-12-12

    Cobalt phthalocyanine (CoPc), iron phthalocyanine (FePc) and their composite (CoPc-FePc) films have been grown by molecular beam epitaxy (MBE). Grazing incidence X-ray diffraction (GIXRD) and scanning electron microscope (SEM) studies showed that composite films has better structural ordering compared to individual CoPc and FePc films. The temperature dependence of resistivity (in the temperature range 25 K- 100 K) showed that composite films are metallic, while individual CoPc and FePc films are in the critical regime of metal-to-insulator (M-I) transition The composite films show very high mobility of 110 cm{sup 2} V{sup -1} s{sup -1} at room temperature i.e. nearly two order of magnitude higher compared to pure CoPc and FePc films.

  15. Molecular Engineering for Enhanced Charge Transfer in Thin-Film Photoanode.

    PubMed

    Kim, Jeong Soo; Kim, Byung-Man; Kim, Un-Young; Shin, HyeonOh; Nam, Jung Seung; Roh, Deok-Ho; Park, Jun-Hyeok; Kwon, Tae-Hyuk

    2017-10-11

    We developed three types of dithieno[3,2-b;2',3'-d]thiophene (DTT)-based organic sensitizers for high-performance thin photoactive TiO2 films and investigated the simple but powerful molecular engineering of different types of bonding between the triarylamine electron donor and the conjugated DTT π-bridge by the introduction of single, double, and triple bonds. As a result, with only 1.3 μm transparent and 2.5-μm TiO2 scattering layers, the triple-bond sensitizer (T-DAHTDTT) shows the highest power conversion efficiency (η = 8.4%; VOC = 0.73 V, JSC = 15.4 mA·cm(-2), and FF = 0.75) in an iodine electrolyte system under one solar illumination (AM 1.5, 1000 W·m(-2)), followed by the single-bond sensitizer (S-DAHTDTT) (η = 7.6%) and the double-bond sensitizer (D-DAHTDTT) (η = 6.4%). We suggest that the superior performance of T-DAHTDTT comes from enhanced intramolecular charge transfer (ICT) induced by the triple bond. Consequently, T-DAHTDTT exhibits the most active photoelectron injection and charge transport on a TiO2 film during operation, which leads to the highest photocurrent density among the systems studied. We analyzed these correlations mainly in terms of charge injection efficiency, level of photocharge storage, and charge-transport kinetics. This study suggests that the molecular engineering of a triple bond between the electron donor and the π-bridge of a sensitizer increases the performance of dye-sensitized solar cell (DSC) with a thin photoactive film by enhancing not only JSC through improved ICT but also VOC through the evenly distributed sensitizer surface coverage.

  16. Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

    NASA Technical Reports Server (NTRS)

    Sarkisov, S.; Curley, M.; Williams, E. K.; Wilkosz, A.; Ila, D.; Poker, D. B.; Hensley, D. K.; Smith, C.; Banks, C.; Penn, B.; Clark, R.

    1998-01-01

    Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

  17. Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

    NASA Technical Reports Server (NTRS)

    Sarkisov, S.; Curley, M.; Williams, E. K.; Wilkosz, A.; Ila, D.; Poker, D. B.; Hensley, D. K.; Smith, C.; Banks, C.; Penn, B.; hide

    1998-01-01

    Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

  18. Microwave Magnetic Materials for Radar and Signal Processing Devices - Thin Film and Bulk Oxides and Metals

    DTIC Science & Technology

    2007-11-29

    single crystals, and (9) the indicated below: successful PLD growth of low loss zinc lithium ferrite films. Visiting scientists: 2 In the area of...was a standard commercial nickel zinc spinel ferrite (NZF) from II. MATERIALS PREPARATION AND X-RAY Trans-Tech, 1T2- 111. The ferroelectric component...2.95 157 6 expected from dense nickel zinc ferrite materials. The data 100 3175 2.99 168 8 for the 27 and 16 vol % samples, however, showed that any

  19. Dye sensitized solar cell applications of CdTiO{sub 3}–TiO{sub 2} composite thin films deposited from single molecular complex

    SciTech Connect

    Ehsan, Muhammad Ali; Khaledi, Hamid; Pandikumar, Alagarsamy; Huang, Nay Ming; Arifin, Zainudin; Mazhar, Muhammad

    2015-10-15

    A heterobimetallic complex [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO{sub 3}–TiO{sub 2} composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity, phase identification and chemical composition of microspherical architectured CdTiO{sub 3}–TiO{sub 2} composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application. - Graphical abstarct: Microspherical designed CdTiO{sub 3}–TiO{sub 2} composite oxides photoanode film has been fabricated from single source precursor [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF via aerosol assisted chemical vapor deposition technique for dye sensitized solar cell application. - Highlights: • Synthesis and characterization of a heterobimetallic Cd–Ti complex. • Fabrication of CdTiO{sub 3}–TiO{sub 2} thin film photoelectrode. • Application as dye sensitized photoanode for solar application.

  20. Dye sensitized solar cell applications of CdTiO3-TiO2 composite thin films deposited from single molecular complex

    NASA Astrophysics Data System (ADS)

    Ehsan, Muhammad Ali; Khaledi, Hamid; Pandikumar, Alagarsamy; Huang, Nay Ming; Arifin, Zainudin; Mazhar, Muhammad

    2015-10-01

    A heterobimetallic complex [Cd2Ti4(μ-O)6(TFA)8(THF)6]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO3-TiO2 composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity, phase identification and chemical composition of microspherical architectured CdTiO3-TiO2 composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application.

  1. Atomic Layer Epitaxy Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization

    DTIC Science & Technology

    1991-06-01

    carbide, SiH 2 Cb1, 14PRC CD adsorbtion , desorption 01.PIECD J7. S(CURITY CLASSI;ICATION 1S SECURITY C.AS’IfICAIION 19. SECURITY CLASSIFICATION 20...the hydrogen atoms break away from the molecule as the SiH 2 CI2 nears or is adsorbed onto the heated substrate and a monolayer of Si having a...terminating layer formed by the remaining chlorine atoms now resides on the Si surface. This molecular surface configuration now prevents the adsorbtion of

  2. Growth and characterization of polymer thin films grown using molecular layer deposition with heterobifunctional precursors

    NASA Astrophysics Data System (ADS)

    Gibbs, Zachary Michael Conway

    In this work, growth of thin polymer films using molecular layer deposition with heterobifunctional precursors is investigated. Several growth phenomena are observed including: loss or gain of reactive sites as a result of precursor reactivity or vapor pressure; precursor diffusion and reaction within the porous polymer film; and crosslinking. Reactions were investigated using quartz crystal microbalance, Fourier transform infrared spectroscopy, and various ex situ techniques. Reactions involving 4-azidophenylisothiocyanate and 4-aminobenzonitrile were shown to stop growth after only a few cycles which is attributed to a loss in reactive sites which was modeled by an exponentially decaying growth rate. Growth of 4-carboxyphenylisothiocyanate with TMA and water was investigated as well. Active site multiplication as a result of the trifunctionality of the TMA molecule was proposed to explain the significantly higher growth rate for TMA/CI films. TMA/H2O/CI films showed the ability to crosslink through aluminum hydroxyl condensation reactions. Upon increasing the reaction temperature, reactant diffusion was observed in the form of mass removal upon TMA exposure. This same phenomena is thought to be occurring in films grown using Diels-Alder reactions in the third section of this thesis. These films showed a strong growth rate dependence upon reactant purge time and growth temperature. FTIR seems to weakly support Diels-Alder reaction, but it appears that the primary film growth mechanism is through CVD-like diffusion and condensation reactions.

  3. Magnetocrystalline Anisotropy of d0-Magnetic Material NaN(001) Thin Films: A Density Functional Study.

    PubMed

    Jekal, Soyoung; Kwon, Oryong; Hong, Soon Cheol; Lee, Jae Il

    2015-03-01

    A bulk d0 NaN of rocksalt or zinc-blende structure was predicted to be a ferromagnetic half metal and furthermore the half-metallicity would be retained in thin films. Such half metallicity of d0 ferromagnetic NaN is attractive for possible application in a spintronics device, such as a spin transfer torque magnetic random access memory. In this study, we carried out first-principles calculations on magnetocrystalline anisotropy rocksalt structured NaN thin films with different thicknesses, using Vienna Ab-initio Simulation Package code. It was found that the NaN(001) thin films have perpendicular magnetization with quite low magnetocrystalline anisotropy energies of order of 10 µeV, but capping of a 5d-transition metal Ta monolayer over the NaN(001) thin films enhances the perpendicular magnetocrystalline anisotropy energies significantly, more than 10 times. Furthermore, the 1 (Ta)/NaN(001) systems retain their half-metallicity except the NaN layer just below Ta.

  4. Molecular dynamics simulation of nano-indentation on Ti-V multilayered thin films

    NASA Astrophysics Data System (ADS)

    Feng, Chao; Peng, Xianghe; Fu, Tao; Zhao, Yinbo; Huang, Cheng; Wang, Zhongchang

    2017-03-01

    We developed a second nearest-neighbor modified embedded-atom method potential for binary Ti-V system. The potential parameters were identified by fitting the lattice parameter, cohesive energy and elastic constants of CsCl-type TiV, and further validated by reproducing the fundamental physical and mechanical properties of Ti-V systems with other crystal structures. In addition, we also performed molecular dynamics simulations of nano-indentation processes of pure Ti film, pure V film, and two kinds of four-layer Ti-V films, V-Ti-V-Ti and Ti-V-Ti-V. We found that the indentation force-depth curve for the pure V film turns flat at an indentation depth of 2.8 nm, where a prismatic loop was observed. Such prismatic loop is not found in the V/Ti/V/Ti multilayer because the thickness of each layer is insufficient for the formation of such prismatic loops, which accounts for the increase of stress in the multilayer.

  5. Molecular Processes Underlying the Structure and Assembly of Thin Films and Nanoparticles at Complex interfaces

    SciTech Connect

    Richmond, Geraldine

    2016-06-03

    Since 1995 we have pursued a number of different studies that are quite diverse in nature but with the common theme of using novel laser based methods to study important processes at buried interfaces. Studies of Corrosion, Passivation on n-GaAs(100)Methanol Photoelectrochemical Cell In these studies we have used picosecond photoluminescence and electrochemical studies to understand the GaAs/methanol interface. In our most extensive set of studies we conducted photo-illumination and XPS experiments to understand the chemistry occurring in the GaAs/methanol photoelectrochemical during photoexcitation. An important distinction between photocorrosion and photoetching of GaAs is elucidated by these studies. The dependence of GaAs photocorrosion on light intensity has been explored to better understand intrinsic differences between the lamplight studies and the picosecond photoluminescence studies. The effect of coating the GaAs with a sulfide layer prior to immersion in the cell has also been explored. This last result has led us to examine n-GaAs as a function of crystallographic orientation after exposure to aqueous Na2S containing solutions has been studied as a function of crystallographic orientation of the GaAs surface. The (100) and (110) surfaces are relatively similar, with significant amounts of As-S species present at the interface. The (111)B surface lacks this constituent, but shows significant amounts of metallic As. The XPS results have been correlated with the results of previous photocorrosion and passivation studies conducted in a photoelectrochemical cell. The studies indicate that the metallic As present at (111)B surface contributes strongly to the large surface recombination velocity found there, and to the inability of Na2S to passivate the (111)B surface. SAMS Under Water: Water Molecular Structure and Bonding at Hydrophobic Surfaces In these DOE sponsored studies we have been interested in learning the similarities and

  6. The effect of Ta interface on the crystallization of amorphous phase change material thin films

    SciTech Connect

    Ghezzi, G. E.; Noé, P. Marra, M.; Sabbione, C.; Fillot, F.; Bernier, N.; Ferrand, J.; Maîtrejean, S.; Hippert, F.

    2014-06-02

    The crystallization of amorphous GeTe and Ge{sub 2}Sb{sub 2}Te{sub 5} phase change material films, with thickness between 10 and 100 nm, sandwiched between either Ta or SiO{sub 2} layers, was investigated by optical reflectivity. Ta cladding layers were found to increase the crystallization temperature, even for films as thick as 100 nm. X-Ray diffraction investigations of crystallized GeTe films showed a very weak texture in Ta cladded films, in contrast with the strong texture observed for SiO{sub 2} cladding layers. This study shows that crystallization mechanism of phase change materials can be highly impacted by interface effects, even for relatively thick films.

  7. Bamboo (Neosinocalamus affinis)-based thin film, a novel biomass material with high performances.

    PubMed

    Song, Fei; Xu, Chen; Bao, Wen-Yi; Wang, Xiu-Li; Wang, Yu-Zhong

    2015-03-30

    Exploration of biomass based materials to replace conventional petroleum based ones has been a trend in recent decades. In this work, bamboo (Neosinocalamus affinis) with abundant resources was used for the first time to prepare films in the presence of cellulose. The effects of weight ratio of bamboo/cellulose on the appearances and properties of the films were investigated. It was confirmed there existed strong interactions between bamboo and cellulose, which were favorable to formation of homogeneous structure of blend films. Particularly, the presence of bamboo could improve the surface hydrophobicity, water resistance and thermal stability of blend films, and the films possessed an excellent oxygen barrier property, compared with generally used commercial packaging films. The bamboo biomass, therefore, is successfully used to create a new film material with a good application prospect in the fields of packaging, coating, and food industry.

  8. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  9. Polar self-assembled thin films for non-linear optical materials

    DOEpatents

    Yang, XiaoGuang; Swanson, Basil I.; Li, DeQuan

    2000-01-01

    The design and synthesis of a family of calix[4]arene-based nonlinear optical (NLO) chromophores are discussed. The calixarene chromophores are macrocyclic compounds consisting of four simple D-.pi.-A units bridged by methylene groups. These molecules were synthesized such that four D-.pi.-A units of the calix[4]arene were aligned along the same direction with the calixarene in a cone conformation. These nonlinear optical super-chromophores were subsequently fabricated into covalently bound self-assembled monolayers on the surfaces of fused silica and silicon. Spectroscopic second harmonic generation (SHG) measurements were carried out to determine the absolute value of the dominant element of the second-order nonlinear susceptibility, d.sub.33, and the average molecular alignment, .PSI.. A value of d.sub.33 =60 pm/V at a fundamental wavelength of 890 nm, and .PSI..about.36.degree. was found with respect to the surface normal.

  10. The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Brooks, Charles M.

    Included in this work is a range of studies on films of homoeptaxial and heteroepitaxial films of SrTiO3 and the first reported phase-pure films of LuFe2O4. We report the structural properties of homoepitaxial (100) SrTiO3 films grown by reactive molecular-beam epitaxy (MBE). The lattice spacing and x-ray diffraction (XRD) rocking curves of stoichiometric MBEgrown SrTiO3 films are indistinguishable from the underlying SrTiO3 substrates. The effect of off-stoichiometry for both strontium-rich and strontium-poor compositions results in lattice expansion with significant changes to the shuttered reflection high-energy electron diffraction oscillations, XRD, film microstructure, and thermal conductivity. Up to an 80% reduction in Sr(1+x)TiO3 film thermal conductivity is measured for x = -0.1 to 0.5. Significant reduction, from 11.5 to ˜2 W˙m-1K-1, occurs through the formation of Ruddlesden-Popper planar faults. The ability to deposit films with a reduction in thermal conductivity is applicable to thermal barrier coatings and thermoelectrics. Scanning transmission electron microscopy is used to examine the formation of Ruddlesden-Popper planar faults in films with strontium excess. We also show that the band gap of SrTiO3 can be altered by >10% (0.3 eV) by using experimentally realizable biaxial strains providing a new means to accomplish band gap engineering of SrTiO3 and related perovskites. Such band gap manipulation is relevant to applications in solar cells water splitting, transparent conducting oxides, superconductivity, two-dimensional electron liquids, and other emerging oxide electronics. This work also presents the adsorption-controlled growth of single-phase (0001)-oriented epitaxial films of charge ordered multiferroic, LuFe2O4, on (111) MgAl2O4, (111) MgO, and (0001) 6H-SiC substrates in an iron-rich environment at pressures and temperatures where excess iron desorbs from the film surface during growth. Scanning transmission electron microscopy reveals

  11. The influence of oxygen partial pressure on material properties of Eu3+-doped Y2O2S thin film deposited by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Ali, A. G.; Dejene, B. F.; Swart, H. C.

    2016-01-01

    Eu3+-doping has been of interest to improve the luminescent characteristics of thin-film phosphors. Y2O2S:Eu3+ films have been grown on Si (100) substrates by using a Pulsed Laser Deposition technique. The thin films grown under different oxygen deposition pressure conditions have been characterized using structural and luminescent measurements. The X-ray diffraction patterns showed mixed phases of cubic and hexagonal crystal structures. As the oxygen partial pressure increased, the crystallinity of the films improved. Further increase of the O2 pressure to 140 mtorr reduced the crystallinity of the film. Similarly, both scanning electron microscopy and Atomic Force Microscopy confirmed that an increase in O2 pressure affected the morphology of the films. The average band gap of the films calculated from diffuse reflectance spectra using the Kubelka-Munk function was about 4.75 eV. The photoluminescence measurements indicated red emission of Y2O2S:Eu3+ thin films with the most intense peak appearing at 619 nm, which is assigned to the 5D0-7F2 transition of Eu3+. This most intense peak was totally quenched at higher O2 pressures. This phosphor may be a promising material for applications in the flat panel displays.

  12. Development of Novel Magnetic Metal Oxide Thin Films and Carbon Nanotube Materials for Potential Device Applications

    DTIC Science & Technology

    2016-05-09

    spin spring materials.”To study this possibility, we extended our investigation to the synthesis of CoFe2O4/CoFe2/CoFe2O4 trilayers under different ...of CoFe2O4/CoFe2/CoFe2O4 trilayers under different sputtering deposition conditions, which included oxygen pressure in the case of the CoFe2O4... percentage . The discussion of spin spring results is in terms of an increase in uniaxial anisotropy energy in the CoFe2 layers due to short range

  13. A multi-detector, digitizer based neutron depth profiling device for characterizing thin film materials

    SciTech Connect

    Mulligan, P. L.; Cao, L. R.; Turkoglu, D.

    2012-07-15

    Neutron depth profiling (NDP) is a mature, nondestructive technique used to characterize the concentration of certain light isotopes in a material as a function of depth by measuring the residual energy of charged particles in neutron induced reactions. Historically, NDP has been performed using a single detector, resulting in low intrinsic detection efficiency, and limiting the technique largely to high flux research reactors. In this work, we describe a new NDP instrument design with higher detection efficiency by way of spectrum summing across multiple detectors. Such a design is capable of acquiring a statistically significant charged particle spectrum at facilities limited in neutron flux and operation time.

  14. A multi-detector, digitizer based neutron depth profiling device for characterizing thin film materials

    NASA Astrophysics Data System (ADS)

    Mulligan, P. L.; Cao, L. R.; Turkoglu, D.

    2012-07-01

    Neutron depth profiling (NDP) is a mature, nondestructive technique used to characterize the concentration of certain light isotopes in a material as a function of depth by measuring the residual energy of charged particles in neutron induced reactions. Historically, NDP has been performed using a single detector, resulting in low intrinsic detection efficiency, and limiting the technique largely to high flux research reactors. In this work, we describe a new NDP instrument design with higher detection efficiency by way of spectrum summing across multiple detectors. Such a design is capable of acquiring a statistically significant charged particle spectrum at facilities limited in neutron flux and operation time.

  15. A multi-detector, digitizer based neutron depth profiling device for characterizing thin film materials.

    PubMed

    Mulligan, P L; Cao, L R; Turkoglu, D

    2012-07-01

    Neutron depth profiling (NDP) is a mature, nondestructive technique used to characterize the concentration of certain light isotopes in a material as a function of depth by measuring the residual energy of charged particles in neutron induced reactions. Historically, NDP has been performed using a single detector, resulting in low intrinsic detection efficiency, and limiting the technique largely to high flux research reactors. In this work, we describe a new NDP instrument design with higher detection efficiency by way of spectrum summing across multiple detectors. Such a design is capable of acquiring a statistically significant charged particle spectrum at facilities limited in neutron flux and operation time.

  16. Research on polycrystalline thin film submodules based on CuInSe sub 2 materials

    SciTech Connect

    Catalano, A.; Arya, R.; Carr, L.; Fieselmann, B.; Lommasson, T.; Podlesny, R.; Russell, L.; Skibo, S.; Rothwarf, A.; Birkmire, R. )

    1992-05-01

    This report describes progress during the first year of a three-year research program to develop 12%-efficient CuInSe{sub 2} (CIS) submodules with area greater than 900 cm{sup 2}. To meet this objective, the program was divided into five tasks: (1) windows, contacts, substrates; (2) absorber material; (3) device structure; (4) submodule design and encapsulation; and (5) process optimization. In the first year of the program, work was concentrated on the first three tasks with an objective to demonstrate a 9%-efficient CIS solar cell. 7 refs.