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Sample records for molecular materials thin-film

  1. Preface: Thin films of molecular organic materials

    NASA Astrophysics Data System (ADS)

    Fraxedas, J.

    2008-03-01

    This special issue is devoted to thin films of molecular organic materials and its aim is to assemble numerous different aspects of this topic in order to reach a wide scientific audience. Under the term 'thin films', structures with thicknesses spanning from one monolayer or less up to several micrometers are included. In order to narrow down this relaxed definition (how thin is thin?) I suggest joining the stream that makes a distinction according to the length scale involved, separating nanometer-thick films from micrometer-thick films. While the physical properties of micrometer-thick films tend to mimic those of bulk materials, in the low nanometer regime new structures (e.g., crystallographic and substrate-induced phases) and properties are found. However, one has to bear in mind that some properties of micrometer-thick films are really confined to the film/substrate interface (e.g. charge injection), and are thus of nanometer nature. Supported in this dimensionality framework, this issue covers the most ideal and model 0D case, a single molecule on a surface, through to the more application-oriented 3D case, placing special emphasis on the fascinating 2D domain that is monolayer assembly. Thus, many aspects will be reviewed, such as single molecules, self-organization, monolayer regime, chirality, growth, physical properties and applications. This issue has been intentionally restricted to small molecules, thus leaving out polymers and biomolecules, because for small molecules it is easier to establish structure--property relationships. Traditionally, the preparation of thin films of molecular organic materials has been considered as a secondary, lower-ranked part of the more general field of this class of materials. The coating of diverse surfaces such as silicon, inorganic and organic single crystals, chemically modified substrates, polymers, etc., with interesting molecules was driven by the potential applications of such molecular materials

  2. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  3. Magneto-optical activity in organic thin film materials

    NASA Astrophysics Data System (ADS)

    Vleugels, Rick; de Vega, Laura; Brullot, Ward; Verbiest, Thierry; Gómez-Lor, Berta; Gutierrez-Puebla, Enrique; Hennrich, Gunther

    2016-12-01

    A series of CF3-capped phenylacetylenes with varying symmetry is obtained by a conventional palladium-catalyzed cross-coupling protocol. The phenylacetylene targets form thin films both, liquid crystalline (LC) and crystalline in nature depending on their molecular structure. The magneto-optical activity of the resulting organic material is extraordinarily high as proved by Faraday rotation spectroscopy on thin film devices.

  4. Thin film dielectric composite materials

    DOEpatents

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  5. Tungsten-doped thin film materials

    DOEpatents

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  6. Microscale damping using thin film active materials

    NASA Astrophysics Data System (ADS)

    Kerrigan, Catherine A.; Ho, Ken K.; Mohanchandra, K. P.; Carman, Gregory P.

    2007-04-01

    This paper focuses on understanding and developing a new approach to dampen MEMS structures using both experiments and analytical techniques. Thin film Nitinol and thin film Terfenol-D are evaluated as a damping solution to the micro scale damping problem. Stress induced twin boundary motion in Nitinol is used to passively dampen potentially damaging vibrations. Magnetic domain wall motion is used to passively dampen vibration in Terfenol-D. The thin films of Nitinol, Nitinol/Silicon laminates and Nitinol/Terfenol-D/Nickel laminates have been produced using a sputter deposition process and damping properties have been evaluated. Dynamic testing shows substantial damping (tan δ) measurable in each case. Nitinol film samples were tested in the Differential Scanning Calorimetry (DSC) to determine phase transformation temperatures. The twin boundary mechanism by which energy absorption occurs is present at all points below the Austenite start temperature (approximately 69°C in our film) and therefore allows damping at cold temperatures where traditional materials fail. Thin film in the NiTi/Si laminate was found to produce substantially higher damping (tan δ = 0.28) due to the change in loading condition. The NiTi/Si laminate sample was tested in bending allowing the twin boundaries to be reset by cyclic tensile and compressive loads. The thin film Terfenol-D in the Nitinol/Terfenol-D/Nickel laminate was shown to produce large damping (tan δ = 0.2). In addition to fabricating and testing, an analytical model of a heterogeneous layered thin film damping material was developed and compared to experimental work.

  7. Synthesis of thin films and materials utilizing a gaseous catalyst

    DOEpatents

    Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

    2013-10-29

    A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

  8. Porous Organic Cage Thin Films and Molecular-Sieving Membranes.

    PubMed

    Song, Qilei; Jiang, Shan; Hasell, Tom; Liu, Ming; Sun, Shijing; Cheetham, Anthony K; Sivaniah, Easan; Cooper, Andrew I

    2016-04-06

    Porous organic cage molecules are fabricated into thin films and molecular-sieving membranes. Cage molecules are solution cast on various substrates to form amorphous thin films, with the structures tuned by tailoring the cage chemistry and processing conditions. For the first time, uniform and pinhole-free microporous cage thin films are formed and demonstrated as molecular-sieving membranes for selective gas separation.

  9. Elastic Properties of Molecular Glass Thin Films

    NASA Astrophysics Data System (ADS)

    Torres, Jessica

    2011-12-01

    This dissertation provides a fundamental understanding of the impact of bulk polymer properties on the nanometer length scale modulus. The elastic modulus of amorphous organic thin films is examined using a surface wrinkling technique. Potential correlations between thin film behavior and intrinsic properties such as flexibility and chain length are explored. Thermal properties, glass transition temperature (Tg) and the coefficient of thermal expansion, are examined along with the moduli of these thin films. It is found that the nanometer length scale behavior of flexible polymers correlates to its bulk Tg and not the polymers intrinsic size. It is also found that decreases in the modulus of ultrathin flexible films is not correlated with the observed Tg decrease in films of the same thickness. Techniques to circumvent reductions from bulk modulus were also demonstrated. However, as chain flexibility is reduced the modulus becomes thickness independent down to 10 nm. Similarly for this series minor reductions in T g were obtained. To further understand the impact of the intrinsic size and processing conditions; this wrinkling instability was also utilized to determine the modulus of small organic electronic materials at various deposition conditions. Lastly, this wrinkling instability is exploited for development of poly furfuryl alcohol wrinkles. A two-step wrinkling process is developed via an acid catalyzed polymerization of a drop cast solution of furfuryl alcohol and photo acid generator. The ability to control the surface topology and tune the wrinkle wavelength with processing parameters such as substrate temperature and photo acid generator concentration is also demonstrated. Well-ordered linear, circular, and curvilinear patterns are also obtained by selective ultraviolet exposure and polymerization of the furfuryl alcohol film. As a carbon precursor a thorough understanding of this wrinkling instability can have applications in a wide variety of

  10. Optoelectronic Nanocomposite Materials for Thin Film Photovoltaics

    DTIC Science & Technology

    2012-06-01

    CdTe and ZnO single-phase thin films , nanocomposite films ...for the CdTe -ZnO thin film system under these conditions. c. Optical Absorption The films produced in the present study consistently exhibited...optical absorbance spectra collected from CdTe -ZnO multilayer nanocomposite thin films . The effect of CdTe layer thickness used per deposition cycle

  11. PHYSICAL EVALUATION OF THIN FILMS OF SOLID STATE MATERIALS.

    DTIC Science & Technology

    microscopy and X-ray and electron diffraction methods. These materials include vapor deposited thin films of boron and boron phosphide on single...crystal silicon substrates via halide reduction, electrodeposits of copper onto single crystal copper substrates, thin films of carbon deposited onto

  12. Optical Properties of Thin Film Molecular Mixtures

    NASA Technical Reports Server (NTRS)

    Jaworske, Donald A.; Shumway, Dean A.; Lyons, Valerie (Technical Monitor)

    2002-01-01

    Thin films composed of molecular mixtures of metal and dielectric are being considered for use as solar selective coatings for a variety of space power applications. By controlling the degree of molecular mixing, the solar selective coatings can be tailored to have the combined properties of high solar absorptance, alpha, and low infrared emittance, epsilon. On orbit, these combined properties would simultaneously maximize the amount of solar energy captured by the coating and minimize the amount of thermal energy radiated. Mini-satellites equipped with solar collectors coated with these cermet coatings may utilize the captured heat energy to power a heat engine to generate electricity, or to power a thermal bus that directs heat to remote regions of the spacecraft. Early work in this area identified the theoretical boundary conditions needed to operate a Carnot cycle in space, including the need for a solar concentrator, a solar selective coating at the heat inlet of the engine, and a radiator. A solar concentrator that can concentrate sunlight by a factor of 100 is ideal. At lower values, the temperature of the solar absorbing surface becomes too low for efficient heat engine operation, and at higher values, cavity type heat receivers become attractive. In designing the solar selective coating, the wavelength region yielding high solar absorptance must be separated from the wavelength region yielding low infrared emittance by establishing a sharp transition in optical properties. In particular, a sharp transition in reflectance is desired in the infrared to achieve the desired optical performance. For a heat engine operating at 450C, a sharp transition at 1.8 micrometers is desired. The radiator completes the heat flow through the Carnot cycle. Additional work has been done supporting the use of molecular mixtures for terrestrial applications. Sputter deposition provides a means to apply coatings to the tubes that carry a working fluid at the focus of trough

  13. Molecular release from patterned nanoporous gold thin films

    NASA Astrophysics Data System (ADS)

    Kurtulus, Ozge; Daggumati, Pallavi; Seker, Erkin

    2014-05-01

    Nanostructured materials have shown significant potential for biomedical applications that require high loading capacity and controlled release of drugs. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a promising novel material that benefits from compatibility with microfabrication, tunable pore morphology, electrical conductivity, well-established gold-thiol conjugate chemistry, and biocompatibility. While np-Au's non-biological applications are abundant, its performance in the biomedical field is nascent. In this work, we employ a combination of techniques including nanoporous thin film synthesis, quantitative electron microscopy, fluorospectrometry, and electrochemical surface characterization to study loading capacity and molecular release kinetics as a function of film properties and discuss underlying mechanisms. The sub-micron-thick sputter-coated nanoporous gold films provide small-molecule loading capacities up to 1.12 μg cm-2 and molecular release half-lives between 3.6 hours to 12.8 hours. A systematic set of studies reveals that effective surface area of the np-Au thin films on glass substrates plays the largest role in determining loading capacity. The release kinetics on the other hand depends on a complex interplay of micro- and nano-scale morphological features.Nanostructured materials have shown significant potential for biomedical applications that require high loading capacity and controlled release of drugs. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a promising novel material that benefits from compatibility with microfabrication, tunable pore morphology, electrical conductivity, well-established gold-thiol conjugate chemistry, and biocompatibility. While np-Au's non-biological applications are abundant, its performance in the biomedical field is nascent. In this work, we employ a combination of techniques including nanoporous thin film synthesis, quantitative electron microscopy

  14. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, R.B.

    1987-05-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  15. Fluorination of amorphous thin-film materials with xenon fluoride

    DOEpatents

    Weil, Raoul B.

    1988-01-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  16. Optical Properties of Thin Film Molecular Mixtures

    NASA Technical Reports Server (NTRS)

    Jaworske, Donald A.; Shumway, Dean A.

    2003-01-01

    Thin films composed of molecular mixtures of metal and dielectric are being considered for use as solar selective coatings for a variety of space power applications. By controlling the degree of molecular mixing, the solar selective coatings can be tailored to have the combined properties of high solar absorptance, , and low infrared emittance, . On orbit, these combined properties would simultaneously maximize the amount of solar energy captured by the coating and minimize the amount of thermal energy radiated. Mini-satellites equipped with solar collectors coated with these cermet coatings may utilize the captured heat energy to power a heat engine to generate electricity, or to power a thermal bus that directs heat to remote regions of the spacecraft. Early work in this area identified the theoretical boundary conditions needed to operate a Carnot cycle in space, including the need for a solar concentrator, a solar selective coating at the heat inlet of the engine, and a radiator.1 A solar concentrator that can concentrate sunlight by a factor of 100 is ideal. At lower values, the temperature of the solar absorbing surface becomes too low for efficient heat engine operation, and at higher values, cavity type heat receivers become attractive. In designing the solar selective coating, the wavelength region yielding high solar absorptance must be separated from the wavelength region yielding low infrared emittance by establishing a sharp transition in optical properties. In particular, a sharp transition in reflectance is desired in the infrared to achieve the desired optical performance. For a heat engine operating at 450 C, a sharp transition at 1.8 micrometers is desired.2 The radiator completes the heat flow through the Carnot cycle.

  17. Thin film thermocouples for high temperature measurement on ceramic materials

    NASA Technical Reports Server (NTRS)

    Holanda, Raymond

    1992-01-01

    Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high-heating-rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

  18. Patterns and conformations in molecularly thin films

    NASA Astrophysics Data System (ADS)

    Basnet, Prem B.

    Molecularly thin films have been a subject of great interest for the last several years because of their large variety of industrial applications ranging from micro-electronics to bio-medicine. Additionally, molecularly thin films can be used as good models for biomembrane and other systems where surfaces are critical. Many different kinds of molecules can make stable films. My research has considered three such molecules: a polymerizable phospholipid, a bent-core molecules, and a polymer. One common theme of these three molecules is chirality. The phospolipid molecules studied here are strongly chiral, which can be due to intrinsically chiral centers on the molecules and also due to chiral conformations. We find that these molecules give rise to chiral patterns. Bent-core molecules are not intrinsically chiral, but individual molecules and groups of molecules can show chiral structures, which can be changed by surface interactions. One major, unconfirmed hypothesis for the polymer conformation at surface is that it forms helices, which would be chiral. Most experiments were carried out at the air/water interface, in what are called Langmuir films. Our major tools for studying these films are Brewster Angle Microscopy (BAM) coupled with the thermodynamic information that can be deduced from surface pressure isotherms. Phospholipids are one of the important constituents of liposomes -- a spherical vesicle com-posed of a bilayer membrane, typically composed of a phospholipid and cholesterol bilayer. The application of liposomes in drug delivery is well-known. Crumpling of vesicles of polymerizable phospholipids has been observed. With BAM, on Langmuir films of such phospholipids, we see novel spiral/target patterns during compression. We have found that both the patterns and the critical pressure at which they formed depend on temperature (below the transition to a i¬‘uid layer). Bent-core liquid crystals, sometimes knows as banana liquid crystals, have drawn

  19. Molecular tailoring of interfaces for thin film on substrate systems

    NASA Astrophysics Data System (ADS)

    Grady, Martha Elizabeth

    Thin film on substrate systems appear most prevalently within the microelectronics industry, which demands that devices operate in smaller and smaller packages with greater reliability. The reliability of these multilayer film systems is strongly influenced by the adhesion of each of the bimaterial interfaces. During use, microelectronic components undergo thermo-mechanical cycling, which induces interfacial delaminations leading to failure of the overall device. The ability to tailor interfacial properties at the molecular level provides a mechanism to improve thin film adhesion, reliability and performance. This dissertation presents the investigation of molecular level control of interface properties in three thin film-substrate systems: photodefinable polyimide films on passivated silicon substrates, self-assembled monolayers at the interface of Au films and dielectric substrates, and mechanochemically active materials on rigid substrates. For all three materials systems, the effect of interfacial modifications on adhesion is assessed using a laser-spallation technique. Laser-induced stress waves are chosen because they dynamically load the thin film interface in a precise, noncontacting manner at high strain rates and are suitable for both weak and strong interfaces. Photodefinable polyimide films are used as dielectrics in flip chip integrated circuit packages to reduce the stress between silicon passivation layers and mold compound. The influence of processing parameters on adhesion is examined for photodefinable polyimide films on silicon (Si) substrates with three different passivation layers: silicon nitride (SiNx), silicon oxynitride (SiOxNy), and the native silicon oxide (SiO2). Interfacial strength increases when films are processed with an exposure step as well as a longer cure cycle. Additionally, the interfacial fracture energy is assessed using a dynamic delamination protocol. The high toughness of this interface (ca. 100 J/m2) makes it difficult

  20. Physical Properties of Thin Film Semiconducting Materials

    NASA Astrophysics Data System (ADS)

    Bouras, N.; Djebbouri, M.; Outemzabet, R.; Sali, S.; Zerrouki, H.; Zouaoui, A.; Kesri, N.

    2005-10-01

    The physics and chemistry of semiconducting materials is a continuous question of debate. We can find a large stock of well-known properties but at the same time, many things are not understood. In recent years, porous silicon (PS-Si), diselenide of copper and indium (CuInSe2 or CIS) and metal oxide semiconductors like tin oxide (SnO2) and zinc oxide (ZnO) have been subjected to extensive studies because of the rising interest their potential applications in fields such as electronic components, solar panels, catalysis, gas sensors, in biocompatible materials, in Li-based batteries, in new generation of MOSFETS. Bulk structure and surface and interface properties play important roles in all of these applications. A deeper understanding of these fundamental properties would impact largely on technological application performances. In our laboratory, thin films of undoped and antimony-doped films of tin oxide have been deposited by chemical vapor deposition. Spray pyrolysis was used for ZnO. CIS was prepared by flash evaporation or close-space vapor transport. Some of the deposition parameters have been varied, such as substrate temperature, time of deposition (or anodization), and molar concentration of bath preparation. For some samples, thermal annealing was carried out under oxygen (or air), under nitrogen gas and under vacuum. Deposition and post-deposition parameters are known to strongly influence film structure and electrical resistivity. We investigated the influence of film thickness and thermal annealing on structural optical and electrical properties of the films. Examination of SnO2 by x-ray diffraction showed that the main films are polycrystalline with rutile structure. The x-ray spectra of ZnO indicated a hexagonal wurtzite structure. Characterizations of CIS films with compositional analysis, x-ray diffraction, scanning microscopy, spectrophotometry, and photoluminescence were carried out.

  1. Packaging material for thin film lithium batteries

    DOEpatents

    Bates, John B.; Dudney, Nancy J.; Weatherspoon, Kim A.

    1996-01-01

    A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

  2. Polycrystalline thin film materials and devices

    NASA Astrophysics Data System (ADS)

    Baron, B. N.; Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    1991-11-01

    Results and conclusions of Phase 1 of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe2 and CdTe solar cells. The kinetics of the formation of CuInSe2 by selenization with hydrogen selenide was investigated and a CuInSe2/Cds solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe2 films and a cell efficiency of 7 percent. Detailed investigations of the open circuit voltage of CuInSe2 solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe2 thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe2 is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10 percent can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm(exp 2) are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  3. Contact potential difference measurements of doped organic molecular thin films

    NASA Astrophysics Data System (ADS)

    Chan, Calvin; Gao, Weiying; Kahn, Antoine

    2004-07-01

    The possibility of nonequilibrium conditions in doped organic molecular thin films is investigated using a combination of ultraviolet photoemission spectroscopy (UPS) and contact potential difference measurements. Surface or interface photovoltage is of particular concern in materials with large band gap and appreciable band (or energy level) bending at interfaces. We investigate here zinc phthalocyanine (ZnPc) and N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'biphenyl-4,4'' diamine (α-NPD) p-doped with the acceptor molecule, tetrafluorotetracyanoquinodimethane (F4-TCNQ). In both cases, we observe an upward movement of the vacuum level away from the metal interface with respect to the Fermi level, consistent with the formation of a depletion region. We show that photovoltage is not a significant factor in these doped films, under ultraviolet illumination during UPS. We suggest that the carrier recombination rate in organic films is sufficiently fast to exclude any photovoltage effects at room temperature. .

  4. An investigation of clustering during the early stages of sculptured thin film growth via molecular dynamics

    NASA Astrophysics Data System (ADS)

    Yurick, Thomas J., Jr.

    2005-11-01

    As nano-technology continues to revolutionize our daily lives, nano-engineered materials take on a more prominent role. One example of a nano-engineered material is that of sculptured thin films. Sculptured thin films or STFs are a special class of thin films that have a characteristic shape imparted to them on the nano-scale, during the deposition process. This characteristic shape can be that of a zig-zag, chevron, or helices. Applications for these STFs vary from micro-electronics to medical applications, however, it is most likely that the best use of them is yet to be discovered. As with any engineering problem, simulation can play a key role in gaining understanding and insight. This is certainly true with the deposition of STFs as well. However, the simulation of an STF entails the capability of simulating each and every atom that makes up the STF. It is the manipulation of the impinging film atoms, during the deposition, that produce the characteristic shape. Luckily, today's fast computer processors coupled with an atomistic simulation method called Molecular Dynamics allows for such a simulation. This work focused on the use of a custom parallel Molecular Dynamics program for the simulation of cluster formation during very early stages of STF growth. Once the simulated thin film morphology was obtained, a qualitative analysis of the simulated thin film morphology was performed by visualizing the thin film surface. A qualitative analysis of the thin film morphology was also performed by estimating the fractal dimension of the simulated surface via the Slit-Island Method.

  5. Molecularly Oriented Polymeric Thin Films for Space Applications

    NASA Technical Reports Server (NTRS)

    Fay, Catharine C.; Stoakley, Diane M.; St.Clair, Anne K.

    1997-01-01

    The increased commitment from NASA and private industry to the exploration of outer space and the use of orbital instrumentation to monitor the earth has focused attention on organic polymeric materials for a variety of applications in space. Some polymeric materials have exhibited short-term (3-5 yr) space environmental durability; however, future spacecraft are being designed with lifetimes projected to be 10-30 years. This gives rise to concern that material property change brought about during operation may result in unpredicted spacecraft performance. Because of their inherent toughness and flexibility, low density, thermal stability, radiation resistance and mechanical strength, aromatic polyimides have excellent potential use as advanced materials on large space structures. Also, there exists a need for high temperature (200-300 C) stable, flexible polymeric films that have high optical transparency in the 300-600nm range of the electromagnetic spectrum. Polymers suitable for these space applications were fabricated and characterized. Additionally, these polymers were molecularly oriented to further enhance their dimensional stability, stiffness, elongation and strength. Both unoriented and oriented polymeric thin films were also cryogenically treated to temperatures below -184 C to show their stability in cold environments and determine any changes in material properties.

  6. Molecular solution processing of metal chalcogenide thin film solar cells

    NASA Astrophysics Data System (ADS)

    Yang, Wenbing

    The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (CISS) and kesterite Cu2ZnSn(S,Se) 4 organized in chronological order. Chalcopyrite CISS is a very promising material. It has been demonstrated to achieve the highest efficiency among thin film solar cells. Scaled-up industry production at present has reached the giga-watt per year level. The process however mainly relies on vacuum systems which account for a significant percentage of the manufacturing cost. In the first section of this dissertation, hydrazine based solution processed CISS has been explored. The focus of the research involves the procedures to fabricate devices from solution. The topics covered in Chapter 2 include: precursor solution synthesis with a focus on understanding the solution chemistry, CISS absorber formation from precursor, properties modification toward favorable device performance, and device structure innovation toward tandem device. For photovoltaics to have a significant impact toward meeting energy demands, the annual production capability needs to be on TW-level. On such a level, raw materials supply of rare elements (indium for CIS or tellurium for CdTe) will be the bottleneck limiting the scalability. Replacing indium with zinc and tin, earth abundant kesterite CZTS exhibits great potential to reach the goal of TW-level with no limitations on raw material availability. Chapter 3 shows pioneering work towards solution processing of CZTS film at low temperature. The solution processed devices show performances which rival vacuum

  7. Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Gölden, D.; Hildebrandt, E.; Alff, L.

    2017-01-01

    A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

  8. Thin film materials and devices for resistive temperature sensing applications

    NASA Astrophysics Data System (ADS)

    Basantani, Hitesh A.

    Thin films of vanadium oxide (VOx) and hydrogenated amorphous silicon (a-Si:H) are the two dominant material systems used in resistive infrared radiation detectors (microbolometers) for sensing long wave infrared (LWIR) wavelengths in the 8--14 microm range. Typical thin films of VO x (x < 2) currently used in the bolometer industry have a magnitude of temperature coefficient of resistance (TCR) between 2%/K -- 3%/K. In contrast, thin films of hydrogenated germanium (SiGe:H) have |TCR| between 3%/K to 4%/K. Devices made from either of these materials have resulted in similar device performance with NETD ≈ 25 mK. The performance of the microbolometers is limited by the electronic noise, especially 1/f noise. Therefore, regardless of the choice of bolometer sensing material and read out circuitry, manufacturers are constantly striving to reduce 1/f noise while simultaneously increasing TCR to give better signal to noise ratios in their bolometers and ultimately, better image quality with more thermal information to the end user. In this work, thin films of VOx and hydrogenated germanium (Ge:H), having TCR values > 4 %/K are investigated as potential candidates for higher sensitivity next generation of microbolometers. Thin films of VO x were deposited by Biased Target Ion Beam Deposition (BTIBD) (˜85 nm thick). Electrical characterization of lateral resistor structures showed resistivity ranging from 104 O--cm to 2.1 x 104 O--cm, TCR varying from --4%/K to --5%/K, normalized Hooge parameter (alphaH/n) of 5 x 10 -21 to 5 x 10-18 cm3. Thin films of Ge:H were deposited by plasma enhanced chemical vapor deposition (PECVD) by incorporating an increasing amount of crystal fraction in the growing thin films. Thin films of Ge:H having a mixed phase, amorphous + nanocrystalline, having a |TCR| > 6 %/K were deposited with resistivity < 2,300 O--cm and a normalized Hooge's parameter 'alphaH/n' < 2 x 10-20 cm3. Higher TCR materials are desired, however, such materials have

  9. Supercritical fluid molecular spray thin films and fine powders

    DOEpatents

    Smith, Richard D.

    1988-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. The solvent is vaporized and pumped away. Solution pressure is varied to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solution temperature is varied in relation to formation of a two-phase system during expansion to control porosity of the film or powder. A wide variety of film textures and powder shapes are produced of both organic and inorganic compounds. Films are produced with regular textural feature dimensions of 1.0-2.0 .mu.m down to a range of 0.01 to 0.1 .mu.m. Powders are formed in very narrow size distributions, with average sizes in the range of 0.02 to 5 .mu.m.

  10. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  11. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  12. Thin film microelectronics materials production in the vacuum of space

    NASA Astrophysics Data System (ADS)

    Ignatiev, A.; Sterling, M.; Horton, C.; Freundlich, A.; Pei, S.; Hill, R.

    1997-01-01

    The international Space Station era will open up a new dimension in the use of one of the unique attributes of space, vacuum, for the production of advanced semiconductor materials and devices for microelectronics applications. Ultra-vacuum is required for the fabrication in thin film form of high quality semiconductors. This can be accomplished behind a free flying platform similar to the current Wake Shield Facility which is specifically designed to support in-space production. The platform will require apparatus for thin film growth, a robotics interface to allow for the change out of raw materials and the harvesting of finished product, and a servicing plant incorporating Space Station that will support long-term utilization of the platform.

  13. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, III, Jerome J.; Halpern, Bret L.

    1993-01-01

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  14. Thin films of copper antimony sulfide: A photovoltaic absorber material

    SciTech Connect

    Ornelas-Acosta, R.E.; Shaji, S.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Krishnan, B.

    2015-01-15

    Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

  15. Electronic processes in thin-film PV materials. Final report

    SciTech Connect

    Taylor, P.C.; Chen, D.; Chen, S.L.

    1998-07-01

    The electronic and optical processes in an important class of thin-film PV materials, hydrogenated amorphous silicon (a-Si:H) and related alloys, have been investigated using several experimental techniques designed for thin-film geometries. The experimental techniques include various magnetic resonance and optical spectroscopies and combinations of these two spectroscopies. Two-step optical excitation processes through the manifold of silicon dangling bond states have been identifies as important at low excitation energies. Local hydrogen motion has been studied using nuclear magnetic resonance techniques and found to be much more rapid than long range diffusion as measured by secondary ion mass spectroscopy. A new metastable effect has been found in a-Si:H films alloyed with sulfur. Spin-one optically excited states have been unambiguously identified using optically detected electron spin resonance. Local hydrogen bonding in microcrystalline silicon films has been studied using NMR.

  16. Deposition of thin films of multicomponent materials

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor)

    1993-01-01

    Composite films of multicomponent materials, such as oxides and nitrides, e.g., lead zirconate titanate, are deposited by dc magnetron sputtering, employing a rotating substrate holder, which rotates relative to a plurality of targets, one target for each metal element of the multicomponent material. The sputtering is carried out in a reactive atmosphere. The substrates on which the layers are deposited are at ambient temperature. Following deposition of the composite film, the film is heated to a temperature sufficient to initiate a solid state reaction and form the final product, which is substantially single phase and substantially homogeneous.

  17. Thin film thermocouples for thermoelectric characterization of nanostructured materials

    NASA Astrophysics Data System (ADS)

    Grayson, Matthew; Zhou, Chuanle; Varrenti, Andrew; Chyung, Seung Hye; Long, Jieyi; Memik, Seda

    2011-03-01

    The increased use of nanostructured materials as thermoelectrics requires reliable and accurate characterization of the anisotropic thermal coefficients of small structures, such as superlattices and quantum wire networks. Thin evaporated metal films can be used to create thermocouples with a very small thermal mass and low thermal conductivity, in order to measure thermal gradients on nanostructures and thereby measure the thermal conductivity and the Seebeck coefficient of the nanostructure. In this work we confirm the known result that thin metal films have lower Seebeck coefficients than bulk metals, and we also calibrate the Seebeck coefficient of a thin-film Ni/Cr thermocouple with 50 nm thickness, showing it to have about 1/4 the bulk value. We demonstrate reproducibility of this thin-filmSeebeck coefficient on multiple substrates, and we show that this coefficient does, in fact, change as a function of film thickness. We will discuss prototype measurement designs and preliminary work as to how these thin films can be used to study both Seebeck coefficients and thermal conductivities of superlattices in various geometries. The same technology can in principle be used on integrated circuits for thermal mapping, under the name ``Integrated On-Chip Thermocouple Array'' (IOTA).

  18. Waveguides in Thin Film Polymeric Materials

    NASA Technical Reports Server (NTRS)

    Sakisov, Sergey; Abdeldayem, Hossin; Venkateswarlu, Putcha; Teague, Zedric

    1996-01-01

    Results on the fabrication of integrated optical components in polymeric materials using photo printing methods will be presented. Optical waveguides were fabricated by spin coating preoxidized silicon wafers with organic dye/polymer solution followed by soft baking. The waveguide modes were studied using prism coupling technique. Propagation losses were measured by collecting light scattered from the trace of a propagation mode by either scanning photodetector or CCD camera. We observed the formation of graded index waveguides in photosensitive polyimides after exposure of UV light from a mercury arc lamp. By using a theoretical model, an index profile was reconstructed which is in agreement with the profile reconstructed by the Wentzel-Kramers-Brillouin calculation technique using a modal spectrum of the waveguides. Proposed mechanism for the formation of the graded index includes photocrosslinking followed by UV curing accompanied with optical absorption increase. We also developed the prototype of a novel single-arm double-mode interferometric sensor based on our waveguides. It demonstrates high sensitivity to the chance of ambient temperature. The device can find possible applications in aeropropulsion control systems.

  19. Electrical and optical properties of copper and nickel molecular materials with tetrabenzo [b,f,j,n] [1,5,9,13] tetraazacyclohexadecine thin films grown by the vacuum thermal evaporation technique.

    PubMed

    Rodriguez, A; Sánchez-Vergara, M E; García-Montalvo, V; Ortiz-Rebollo, A; Alvarez-Bada, J R; Alvarez-Toledano, C

    2010-01-01

    Semiconducting molecular-material thin-films of tetrabenzo (b,f,j,n) [1,5,9,13] tetraazacyclohexadecine copper(II) and nickel(II) bisanthraflavates have been prepared by using vacuum thermal evaporation on Corning glass substrates and crystalline silicon wafers. The films thus obtained were characterized by infrared spectroscopy (FTIR), atomic force microscopy (AFM), ultraviolet-visible (UV-vis) spectroscopy and ellipsometry. IR spectroscopy showed that the molecular-material thin-films exhibit the same intra-molecular bonds as the original compounds, which suggests that the thermal evaporation process does not significantly alter their bonds. The optical band-gap values calculated from the absorption coefficient may be related to non-direct electronic interband transitions. The effect of temperature on conductivity was also measured in these samples. It was found that the temperature-dependent electric current is always higher for the nickel-based material and suggests a semiconductor-like behavior with conductivities in the order of 10(-8)Omega(-1)cm(-1).

  20. Remote plasma processing of thin film materials

    NASA Astrophysics Data System (ADS)

    Kastenmeier, Bernd E. E.

    1999-09-01

    In this thesis, phenomena and mechanisms of remote plasma processes are investigated. The plasmas are spatially separated from the sample surface. Chemically reactive species are produced in the discharge region from rather inert feed gases. They exit the discharge region and travel in the afterglow towards the reaction chamber, where primarily neutral species arrive. The interaction with the sample surface is purely chemical. The absence of direct plasma surface interactions distinguishes remote plasma Chemical Dry Etching (CDE) from other etch processes like Reactive Ion Etching (RIE) or Inductively Coupled Plasma (ICP) etching. The etch reactions in CDE are isotropic, potentially offer great etch rate ratios and minimize substrate damage due to the absence of direct plasma-surface interactions. However, some materials like silicon dioxide (SiO2) or fluorocarbon deposits are difficult to remove because of the lack of activation energy otherwise provided by ion bombardment. In CDE, rates can be enhanced by the introduction of a new reaction pathway. Remote plasma CDE of silicon nitride (Si3N4) is an example for increasing the overall reaction rate by introducing a new reaction channel. Typically, the Si3N4 surface is exposed to the fluorine rich afterglow of a fluorocarbon, nitrogen trifluoride (NF 3) or sulfur hexafluoride (SF6) based discharge. We find that the Si3N4 etch rate is dramatically enhanced when Nitric Oxide (NO) is present in the afterglow as compared to the case in which only fluorine is present. Presented here are detailed analyses of the etching of Si3N 4 and SiO2 in different chemistries. Several experimental techniques are employed to investigate the composition of the plasma and the afterglow, the surface modifications and the etch rates for tetrafluoromethane (CF4) and NF3 based processes. These measurements establish the effect of NO on the Si3N4 etch rate. The dominant mechanism for the etch rate enhancement is shown by mass spectrometry

  1. Designing thin film materials — Ternary borides from first principles

    PubMed Central

    Euchner, H.; Mayrhofer, P.H.

    2015-01-01

    Exploiting the mechanisms responsible for the exceptional properties of aluminum based nitride coatings, we apply ab initio calculations to develop a recipe for designing functional thin film materials based on ternary diborides. The combination of binary diborides, preferring different structure types, results in supersaturated metastable ternary systems with potential for phase transformation induced effects. For the exemplary cases of MxW1 − xB2 (with M = Al, Ti, V) we show by detailed ab initio calculations that the respective ternary solid solutions are likely to be experimentally accessible by modern depositions techniques. PMID:26082562

  2. Molecular dynamics simulation of friction of hydrocarbon thin films

    SciTech Connect

    Tamura, Hiroyuki; Yoshida, Muneo; Kusakabe, Kenichi

    1999-10-26

    Molecular Dynamics (MD) simulations were performed to investigate the dynamic behavior of hydrocarbon molecules under shear conditions. Frictional properties of cyclohexane, n-hexane, and iso-hexane thin films confirmed between two solid surfaces were calculated. Because the affinity of the solid surfaces in these simulations is strong, slippages occurred at inner parts of the confined films, whereas no slippages were observed at the solid boundaries. The hexagonal closest packing structure was observed for the adsorbed cyclohexane molecular layers. The branched methyl groups in the iso-hexane molecules increase the shear stress between the molecular layers. For the n-hexane monolayer, molecules were observed to roll during the sliding simulations. Rolling of the n-hexane molecules decreased the shear stress.

  3. The Constitutive Modeling of Thin Films with Randon Material Wrinkles

    NASA Technical Reports Server (NTRS)

    Murphey, Thomas W.; Mikulas, Martin M.

    2001-01-01

    Material wrinkles drastically alter the structural constitutive properties of thin films. Normally linear elastic materials, when wrinkled, become highly nonlinear and initially inelastic. Stiffness' reduced by 99% and negative Poisson's ratios are typically observed. This paper presents an effective continuum constitutive model for the elastic effects of material wrinkles in thin films. The model considers general two-dimensional stress and strain states (simultaneous bi-axial and shear stress/strain) and neglects out of plane bending. The constitutive model is derived from a traditional mechanics analysis of an idealized physical model of random material wrinkles. Model parameters are the directly measurable wrinkle characteristics of amplitude and wavelength. For these reasons, the equations are mechanistic and deterministic. The model is compared with bi-axial tensile test data for wrinkled Kaptong(Registered Trademark) HN and is shown to deterministically predict strain as a function of stress with an average RMS error of 22%. On average, fitting the model to test data yields an RMS error of 1.2%

  4. Thin-film ferroelectric materials and their applications

    NASA Astrophysics Data System (ADS)

    Martin, Lane W.; Rappe, Andrew M.

    2016-11-01

    Ferroelectric materials, because of their robust spontaneous electrical polarization, are widely used in various applications. Recent advances in modelling, synthesis and characterization techniques are spurring unprecedented advances in the study of these materials. In this Review, we focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways. We explore how the study of ferroelectric materials has expanded our understanding of fundamental effects, enabled the discovery of novel phases and physics, and allowed unprecedented control of materials properties. We discuss several exciting possibilities for the development of new devices, including those in electronic, thermal and photovoltaic applications, and transduction sensors and actuators. We conclude with a brief survey of the different directions that the field may expand to over the coming years.

  5. Using Thin Films to Screen Possible Scintillator Materials

    SciTech Connect

    Milbrath, Brian D.; Caggiano, Joseph A.; Engelhard, Mark H.; Joly, Alan G.; Matson, Dean W.; Nachimuthu, Ponnusamy; Olsen, Larry C.

    2009-06-30

    The discovery and optimization of new scintillators has traditionally been a rather slow process due to the difficulties of single crystal growth. This paper discusses the production of polycrystalline scintillator thin films (a few microns thick) which were tested in order to determine what characterizations could be made concerning a material’s ultimate potential as a scintillator prior to pursuing crystal growth. Thin films of CaF2(Eu), CeF3, and CeCl3, all known scintillators, were produced by vapor deposition. The hygroscopic CeCl3 was coated with multiple polymer-aluminum oxide bi-layers. Emission spectra peak wavelengths and decay times agreed with single crystal values. The films were too thin to measure gamma photopeaks, but using alpha energy deposition peaks, one could compare the relative photon yield/MeV between materials. The values obtained appear to give a relevant indication of a material’s light yield potential. The technique also appears useful for quickly determining the proper dopant amount for a given material.

  6. Chemically Deposited Thin-Film Solar Cell Materials

    NASA Technical Reports Server (NTRS)

    Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

    2005-01-01

    We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

  7. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1997-03-01

    Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

  8. HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy.

    PubMed

    Yue, Ruoyu; Barton, Adam T; Zhu, Hui; Azcatl, Angelica; Pena, Luis F; Wang, Jian; Peng, Xin; Lu, Ning; Cheng, Lanxia; Addou, Rafik; McDonnell, Stephen; Colombo, Luigi; Hsu, Julia W P; Kim, Jiyoung; Kim, Moon J; Wallace, Robert M; Hinkle, Christopher L

    2015-01-27

    In this work, we demonstrate the growth of HfSe2 thin films using molecular beam epitaxy. The relaxed growth criteria have allowed us to demonstrate layered, crystalline growth without misfit dislocations on other 2D substrates such as highly ordered pyrolytic graphite and MoS2. The HfSe2 thin films exhibit an atomically sharp interface with the substrates used, followed by flat, 2D layers with octahedral (1T) coordination. The resulting HfSe2 is slightly n-type with an indirect band gap of ∼ 1.1 eV and a measured energy band alignment significantly different from recent DFT calculations. These results demonstrate the feasibility and significant potential of fabricating 2D material based heterostructures with tunable band alignments for a variety of nanoelectronic and optoelectronic applications.

  9. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  10. Novel wide band gap materials for highly efficient thin film tandem solar cells. Final report

    SciTech Connect

    Brian E. Hardin; Connor, Stephen T.; Peters, Craig H.

    2012-06-11

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949 mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV's goal in Phase I of the DOE SBIR was to (1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and (2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin

  11. Nonlinear Optical Properties of Organic and Polymeric Thin Film Materials of Potential for Microgravity Processing Studies

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Paley, Mark S.; Penn, Benjamin; Witherow, William K.; Bank, Curtis; Shields, Angela; Hicks, Rosline; Ashley, Paul R.

    1996-01-01

    In this paper, we will take a closer look at the state of the art of polydiacetylene, and metal-free phthalocyanine films, in view of the microgravity impact on their optical properties, their nonlinear optical properties and their potential advantages for integrated optics. These materials have many attractive features with regard to their use in integrated optical circuits and optical switching. Thin films of these materials processed in microgravity environment show enhanced optical quality and better molecular alignment than those processed in unit gravity. Our studies of these materials indicate that microgravity can play a major role in integrated optics technology. Polydiacetylene films are produced by UV irradiation of monomer solution through an optical window. This novel technique of forming polydiacetylene thin films has been modified for constructing sophisticated micro-structure integrated optical patterns using a pre-programmed UV-Laser beam. Wave guiding through these thin films by the prism coupler technique has been demonstrated. The third order nonlinear parameters of these films have been evaluated. Metal-free phthalocyanine films of good optical quality are processed in our laboratories by vapor deposition technique. Initial studies on these films indicate that they have excellent chemical, laser, and environmental stability. They have large nonlinear optical parameters and show intrinsic optical bistability. This bistability is essential for optical logic gates and optical switching applications. Waveguiding and device making investigations of these materials are underway.

  12. Absorption of thin film materials at 10.6 microm.

    PubMed

    Gibbs, W E; Butterfield, A W

    1975-12-01

    Absorption indices at a wavelength of 10.6 mum for thin films of As(2)S(3), GeSe, BaF(2), ZnSe, and CdTe were measured by calorimetric techniques with a CO(2) laser. The values obtained, 4.6 x 10(-4), 1.4 x 10(-3), 2.8 x 10(-3), 2.8 x 10(-3), and 5.0 x 10(-3), respectively, were significantly greater than the corresponding values for the bulk materials. This difference was least for the vitreous films, As(2)S(3) and GeSe, which also had a lower absorption than the remaining polycrystalline films. Details are presented of the microstructure of the films as determined by scanning electron microscopy and k-ray diffraction.

  13. Fundamentals of polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1991-01-01

    This report presents the results of a one-year research program on polycrystalline thin-film solar cells. The research was conducted to better understand the limitations and potential of solar cells using CuInSe{sub 2} and CdTe by systematically investigating the fundamental relationships linking material processing, material properties, and device behavior. By selenizing Cu and In layers, we fabricated device-quality CuInSe{sub 2} thin films and demonstrated a CuInSe{sub 2} solar cell with 7% efficiency. We added Ga, to increase the band gap of CuInSe{sub 2} devices to increase the open-circuit voltage to 0.55 V. We fabricated and analyzed Cu(InGa)Se{sub 2}/CuInSe{sub 2} devices to demonstrate the potential for combining the benefits of higher V{sub oc} while retaining the current-generating capacity of CuInSe{sub 2}. We fabricated an innovative superstrate device design with more than 5% efficiency, as well as a bifacial spectral-response technique for determining the electron diffusion length and optical absorption coefficient of CuInSe{sub 2} in an operational cell. The diffusion length was found to be greater than 1 {mu}m. We qualitatively modeled the effect of reducing heat treatments in hydrogen and oxidizing treatments in air on the I-V behavior of CuInSe{sub 2} devices. We also investigated post-deposition heat treatments and chemical processing and used them to fabricate a 9.6%-efficient CdTe/CdS solar cell using physical vapor deposition.

  14. Using Organic Light-Emitting Electrochemical Thin-Film Devices to Teach Materials Science

    ERIC Educational Resources Information Center

    Sevian, Hannah; Muller, Sean; Rudmann, Hartmut; Rubner, Michael F.

    2004-01-01

    Materials science can be taught by applying organic light-emitting electrochemical thin-film devices and in this method students were allowed to make a light-emitting device by spin coating a thin film containing ruthenium (II) complex ions onto a glass slide. Through this laboratory method students are provided with the opportunity to learn about…

  15. Thin Film Materials and Devices for Resistive Temperature Sensing Applications

    DTIC Science & Technology

    2015-05-21

    plasma enhanced atomic layer deposition (PEALD) with help from Yiyang Gong from the department of Electrical Engineering. A 32 nm of Al2O3 was...on Thin Film Physics and Applications, Proc. of SPIE Vol. 9068, 2013. [26] D. Zhao, Plasma-enhanced Atomic Layer Deposition Zinc Oxide Flexible... deposition of Si:H and SiGe:H 25 thin films, thin films of Ge:H also show a decrease in the thickness of amorphous bulk layer prior to the

  16. Defect-Controlled Preparation of UiO-66 Metal-Organic Framework Thin Films with Molecular Sieving Capability.

    PubMed

    Zhang, Caiqin; Zhao, Yajing; Li, Yali; Zhang, Xuetong; Chi, Lifeng; Lu, Guang

    2016-01-01

    Metal-organic framework (MOF) UiO-66 thin films are solvothermally grown on conducting substrates. The as-synthesized MOF thin films are subsequently dried by a supercritical process or treated with polydimethylsiloxane (PDMS). The obtained UiO-66 thin films show excellent molecular sieving capability as confirmed by the electrochemical studies for redox-active species with different sizes.

  17. FMR study of thin film FeGe skyrmionic material

    NASA Astrophysics Data System (ADS)

    Bhallamudi, Vidya P.; Page, Michael R.; Gallagher, James; Purser, Carola; Schulze, Joseph; Yang, Fengyuan; Hammel, P. Chris

    Magnetic Skyrmions have attracted intense interest due to their novel topological properties and the potential for energy efficient computing. Magnetic dynamics play an important part in enabling some of these functionalities. Understanding these dynamics can shed light on the interplay of the various magnetic interactions that exist in these materials and lead to a rich magnetic phase diagram, including the Skyrmion phase. We have grown phase-pure FeGe epitaxial films on Si (111) and studied them using ferromagnetic resonance (FMR). FeGe has one of the highest recorded skyrmion transition temperatures, close to room temperature, and thin films are known to further stabilize the Skyrmion phase in the magnetic field-temperature space. We have performed cavity-based single frequency FMR from liquid nitrogen to room temperature on 120 nm thick films in both in-plane and out-of-plane geometries. The resulting complex spectra are consistent with those reported in literature for the bulk material and can be understood in terms of a conical model for the magnetism. Variable temperature broadband spectroscopy and measurements on thinner films, to better identify the various magnetic phases and their dynamic behavior, are ongoing and their progress will be discussed. Funding for this research was provided by the Center for Emergent Materials: an NSF MRSEC under Award Number DMR-1420451.

  18. Materials genomics of thin film strain relaxation by misfit dislocations

    NASA Astrophysics Data System (ADS)

    Hull, R.; Parvaneh, H.; Andersen, D.; Bean, John C.

    2015-12-01

    We summarize the development and implementation of a "process simulator" for modeling thin film strain relaxation by injection of misfit dislocations. The process simulator, initially developed for GexSi1-x/Si(100) lattice-mismatched epitaxy, integrates elasticity and dislocation theory with experimental measurements of kinetic parameters describing dislocation nucleation, propagation, and interactions. This enables predictive simulation of the development of misfit dislocation arrays during growth and thermal annealing sequences. Further, in the spirit of the materials genome initiative, we show how once a relatively complete description is built for one materials system, extension to a related system may be implemented using a greatly reduced data set. We illustrate this concept by translation of the simulator for GexSi1-x/Si(100) epitaxy into predictive simulation for the GexSi1-x/Si(110) system (which has quite different dislocation microstructure and kinetics) using greatly reduced data sets for the latter system and incorporating data refinement methods to extract unknown kinetic parameters. This sets the platform for extension of these methods to a broader set of strained layer systems.

  19. Organic and inorganic–organic thin film structures by molecular layer deposition: A review

    PubMed Central

    Sundberg, Pia

    2014-01-01

    Summary The possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic–organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications. PMID:25161845

  20. Development of Thin Film Thermocouples on Ceramic Materials for Advanced Propulsion System Applications

    NASA Technical Reports Server (NTRS)

    Holanda, R.

    1992-01-01

    Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 c. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The new thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials tested are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high heating rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperature of 1500 C depending on the stability of the particular ceramic substrate.

  1. Development of thin film thermocouples on ceramic materials for advanced propulsion system applications

    NASA Technical Reports Server (NTRS)

    Holanda, Raymond

    1993-01-01

    Thin film thermocouples were developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose is to develop thin film thermocouples for use on ceramic materials. The new thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials tested are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high heating rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hr or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

  2. ZnO Thin Films Deposited on Textile Material Substrates for Biomedical Applications

    NASA Astrophysics Data System (ADS)

    Duta, L.; Popescu, A. C.; Dorcioman, G.; Mihailescu, I. N.; Stan, G. E.; Zgura, I.; Enculescu, I.; Dumitrescu, I.

    We report on the coating with ZnO adherent thin films of cotton woven fabrics by Pulsed laser deposition technique in order to obtain innovative textile materials, presenting protective effects against UV radiations and antifungal action.

  3. Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials

    DOEpatents

    Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

    2014-02-04

    Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

  4. Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Keen, B.; Makin, R.; Stampe, P. A.; Kennedy, R. J.; Sallis, S.; Piper, L. J.; McCombe, B.; Durbin, S. M.

    2014-04-01

    The alloying of bismuth with III-V semiconductors, in particular GaAs and InAs thin films grown by molecular beam epitaxy (MBE), has attracted considerable interest due to the accompanying changes in band structure and lattice constant. Specifically, bismuth incorporation in these compounds results in both a reduction in band gap (through shifting of the valence band) and an increase in the lattice constant of the alloy. To fully understand the composition of these alloys, a better understanding of the binary endpoints is needed. At present, a limited amount of literature exists on the III-Bi family of materials, most of which is theoretical work based on density functional theory calculations. The only III-Bi material known to exist (in bulk crystal form) is InBi, but its electrical properties have not been sufficiently studied and, to date, the material has not been fabricated as a thin film. We have successfully deposited crystalline InBi on (100) GaAs substrates using MBE. Wetting of the substrate is poor, and regions of varying composition exist across the substrate. To obtain InBi, the growth temperature had to be below 100 °C. It was found that film crystallinity improved with reduced Bi flux, into an In-rich regime. Additionally, attempts were made to grow AlBi and GaBi.

  5. Ultrafast Polarization Switching in a Biaxial Molecular Ferroelectric Thin Film: [Hdabco]ClO4.

    PubMed

    Tang, Yuan-Yuan; Zhang, Wan-Ying; Li, Peng-Fei; Ye, Heng-Yun; You, Yu-Meng; Xiong, Ren-Gen

    2016-12-07

    Molecular ferroelectrics are attracting much attention as valuable complements to conventional ceramic ferroelectrics owing to their solution processability and nontoxicity. Encouragingly, the recent discovery of a multiaxial molecular ferroelectric, tetraethylammonium perchlorate, is expected to be able to solve the problem that in the technologically relevant thin-film form uniaxial molecular ferroelectrics have been found to perform considerably more poorly than in bulk. However, it can show good polarization-electric field (P-E) hysteresis loops only at very low frequency, severely hampering practical applications such as ferroelectric random access memory. Here, we present a biaxial molecular ferroelectric thin film of [Hdabco]ClO4 (dabco = 1,4-diazabicyclo[2.2.2]octane) (1), where a perfect ferroelectric hysteresis loop can be observed even at 10 kHz. It is the first example of a molecular ferroelectric thin film whose polarization can be switched at such a high frequency. Moreover, using piezoresponse force microscopy, we clearly observed the coexistence of 180° and non-180° ferroelectric domains and provided direct experimental proof that 180° ferroelectric switching and non-180° ferroelastic switching are both realized; that is, a flexible alteration of the polarization axis direction can occur in the thin film by applying an electric field. These results open a new avenue for applications of molecular ferroelectrics and will inspire further exploration of high-performance multiaxial molecular ferroelectric thin films.

  6. Antireflection effects at nanostructured material interfaces and the suppression of thin-film interference.

    PubMed

    Yang, Qiaoyin; Zhang, Xu A; Bagal, Abhijeet; Guo, Wei; Chang, Chih-Hao

    2013-06-14

    Thin-film interference is a well-known effect, and it is commonly observed in the colored appearance of many natural phenomena. Caused by the interference of light reflected from the interfaces of thin material layers, such interference effects can lead to wavelength and angle-selective behavior in thin-film devices. In this work, we describe the use of interfacial nanostructures to eliminate interference effects in thin films. Using the same principle inspired by moth-eye structures, this approach creates an effective medium where the index is gradually varying between the neighboring materials. We present the fabrication process for such nanostructures at a polymer-silicon interface, and experimentally demonstrate its effectiveness in suppressing thin-film interference. The principle demonstrated in this work can lead to enhanced efficiency and reduce wavelength/angle sensitivity in multilayer optoelectronic devices.

  7. Fe3O4 thin films: controlling and manipulating an elusive quantum material

    NASA Astrophysics Data System (ADS)

    Liu, Xionghua; Chang, Chun-Fu; Rata, Aurora Diana; Komarek, Alexander Christoph; Tjeng, Liu Hao

    2016-12-01

    Fe3O4 (magnetite) is one of the most elusive quantum materials and at the same time one of the most studied transition metal oxide materials for thin-film applications. The theoretically expected half-metallic behaviour generates high expectations that it can be used in spintronic devices. Yet, despite the tremendous amount of work devoted to preparing thin films, the enigmatic first-order metal-insulator transition, and the hallmark of magnetite known as the Verwey transition, is in thin films extremely broad and occurs at substantially lower temperatures as compared with that in high-quality bulk single crystals. Here we have succeeded in finding and making a particular class of substrates that allows the growth of magnetite thin films with the Verwey transition as sharp as in the bulk. Moreover, we are now able to tune the transition temperature and, using tensile strain, increase it to substantially higher values than in the bulk.

  8. Advanced Nanoscale Thin Film & Bulk Materials Towards Thermoelectric Power Conversion Efficiencies of 30%

    DTIC Science & Technology

    2014-02-27

    APS, November 12-14, 2009, abstract #G2.007 4) R. Venkatasubramanian, G. Bulman, P. Barletta, J. Stuart & T. Colpitts, Thin-film 2-di superlattices...Presentation), JHU/APL WALEX Advanced Portable Power Systems Workshop, Johns Hopkins University, Laurel, MD, June 24, 2010 6) R. Venkatasubramanian, G...Bulman, P. Barletta, J. Stuart & T. Colpitts, High Figure of Merit Thin-film Superlattice Thermoelectric Materials and Devices (Invited Presentation

  9. Multiferroic fluoride BaCoF4 Thin Films Grown Via Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Borisov, Pavel; Johnson, Trent; García-Castro, Camilo; Kc, Amit; Schrecongost, Dustin; Cen, Cheng; Romero, Aldo; Lederman, David

    Multiferroic materials exhibit exciting physics related to the simultaneous presence of multiple long-range orders, in many cases consisting of antiferromagnetic (AF) and ferroelectric (FE) orderings. In order to provide a new, promising route for fluoride-based multiferroic material engineering, we grew multiferroic fluoride BaCoF4 in thin film form on Al2O3 (0001) substrates by molecular beam epitaxy. The films grow with the orthorhombic b-axis out-of-plane and with three in-plane structural twin domains along the polar c-axis directions. The FE ordering in thin films was verified by FE remanent hysteresis loops measurements at T = 14 K and by room temperature piezoresponse force microscopy (PFM). An AF behavior was found below Neel temperature TN ~ 80 K, which is in agreement with the bulk properties. At lower temperatures two additional magnetic phase transitions at 19 K and 41 K were found. First-principles calculations demonstrated that the growth strain applied to the bulk BaCoF4 indeed favors two canted spin orders, along the b- and a-axes, respectively, in addition to the main AF spin order along the c-axis. Supported by FAME (Contract 2013-MA-2382), WV Research Challenge Grant (HEPC.dsr.12.29), and DMREF-NSF 1434897.

  10. Enhanced Rates of Photoinduced Molecular Orientation in a Series of Molecular Glassy Thin Films.

    PubMed

    Snell, Kristen E; Hou, Renjie; Ishow, Eléna; Lagugné-Labarthet, François

    2015-07-07

    Photoinduced orientation in a series of molecular glasses made of small push-pull azo derivatives is dynamically investigated for the first time. Birefringence measurements at 632.8 nm are conducted with a temporal resolution of 100 ms to probe the fast rate of the azo orientation induced under polarized light and its temporal stability over several consecutive cycles. To better evaluate the influence of the azo chemical substituents and their electronic properties on the orientation of the whole molecule, a series of push-pull azo derivatives involving a triphenylaminoazo core substituted with distinct electron-withdrawing moieties is studied. All resulting thin films are probed using polarization modulation infrared spectroscopy that yields dynamical linear dichroism measurements during a cycle of orientation followed by relaxation. We show here in particular that the orientation rates of small molecule-based azo materials are systematically increased up to 7-fold compared to those of a reference polymer counterpart. For specific compounds, the percentage of remnant orientation is also higher, which makes these materials of great interest and promising alternatives to azobenzene-containing polymers for a variety of applications requiring a fast response and absolute control over the molecular weight.

  11. Direct Photoalignment and Optical Patterning of Molecular Thin Films.

    PubMed

    Pithan, Linus; Beyer, Paul; Bogula, Laura; Zykov, Anton; Schäfer, Peter; Rawle, Jonathan; Nicklin, Chris; Opitz, Andreas; Kowarik, Stefan

    2017-02-01

    A novel strategy for direct photoalignment of molecular materials using optothermal re-orientation is introduced. Photoalignment for molecular materials such as the organic semiconductor tetracene is shown, without relying on additional photoreactive dopants or alignment layers. Patterning and polarized light emission, e.g., for polarized organic light emitting diodes is demonstrated.

  12. Scanning Tunneling Microscopy of Multilayer Thin Film Solar Cell Materials^*

    NASA Astrophysics Data System (ADS)

    Mantovani, J. G.; Friedfeld, R.; Raffaelle, R. P.

    1996-03-01

    We have been investigating electrochemically deposited multilayer structures based on the Cu_xIn_2-xSe2 system for use in thin film solar cells. The interest in multilayer structures is due to their proposed use in increasing thin film solar cell efficiency. We have imaged the artificially imposed superstructure of our nanoscale multilayers using a scanning tunneling microscope. A comparison is made between the theoretically calculated modulation wavelengths and those generated by Fourier analysis of the scanning tunneling microscope images. A discussion of the use of photo-assisted tunneling spectroscopy in a modified STM is presented. * This work was supported by the Southeastern University Research Association in collaboration with Oak Ridge National Laboratory and the Florida Solar Energy Center.

  13. Atomic-scale analysis of plastic deformation in thin-film forms of electronic materials

    NASA Astrophysics Data System (ADS)

    Kolluri, Kedarnath

    Nanometer-scale-thick films of metals and semiconductor heterostructures are used increasingly in modern technologies, from microelectronics to various areas of nanofabrication. Processing of such ultrathin-film materials generates structural defects, including voids and cracks, and may induce structural transformations. Furthermore, the mechanical behavior of these small-volume structures is very different from that of bulk materials. Improvement of the reliability, functionality, and performance of nano-scale devices requires a fundamental understanding of the atomistic mechanisms that govern the thin-film response to mechanical loading in order to establish links between the films' structural evolution and their mechanical behavior. Toward this end, a significant part of this study is focused on the analysis of atomic-scale mechanisms of plastic deformation in freestanding, ultrathin films of face-centered cubic (fcc) copper (Cu) that are subjected to biaxial tensile strain. The analysis is based on large-scale molecular-dynamics simulations. Elementary mechanisms of dislocation nucleation are studied and several problems involving the structural evolution of the thin films due to the glide of and interactions between dislocations are addressed. These problems include void nucleation, martensitic transformation, and the role of stacking faults in facilitating dislocation depletion in ultrathin films and other small-volume structures of fcc metals. Void nucleation is analyzed as a mechanism of strain relaxation in Cu thin films. The glide of multiple dislocations causes shearing of atomic planes and leads to formation of surface pits, while vacancies are generated due to the glide motion of jogged dislocations. Coalescence of vacancy clusters with surface pits leads to formation of voids. In addition, the phase transformation of fcc Cu films to hexagonal-close packed (hcp) ones is studied. The resulting martensite phase nucleates at the film's free surface and

  14. Vibrational modes and changing molecular conformation of perfluororubrene in thin films and solution.

    PubMed

    Anger, F; Scholz, R; Gerlach, A; Schreiber, F

    2015-06-14

    We investigate the vibrational properties of perfluororubrene (PF-RUB) in thin films on silicon wafers with a native oxide layer as well as on silicon wafers covered with a self-assembled monolayer and in dichloromethane solution. In comparison with computed Raman and IR spectra, we can assign the molecular modes and identify two molecular conformations with twisted and planar tetracene backbones of the molecule. Moreover, we employ Raman imaging techniques to study the morphology and distribution of the molecular conformation in PF-RUB thin films.

  15. The effects of external stimuli on molecular organization in organic thin films by infrared spectroscopy

    NASA Astrophysics Data System (ADS)

    Hietpas, Geoffrey David

    The study of organic thin films has been an active field of research for nearly 100 years. Two general types of organic thin film systems have received considerable attention. The first of these is the field of self-assembled monolayers (SAM's), where a reactive adsorbate is spontaneously organized at a substrate through ionic or covalent bonding. The second area is comprised of thin films of polymeric materials which may also be ordered and chemically attached like SAM's, but also includes disordered systems pinned by random attachment, and purely physisorbed films held by Van der Waals forces. The incentive for research on these systems has focused on potential improvements in applications such as biocompatable implants, lithographic masks or resists, chromatographic coatings, biosensors, and providing corrosion protection for the underlying substrate. For virtually any application, an organic thin film must remain stable such that its structure is either unaltered or reversibly changed in a manner that does not affect performance. In this thesis, the technique of infrared spectroscopy is applied to the study of thin film stability in response to external stimuli. Both polymer thin films (thickness < 0.5 mum) and SAM systems are studied, and chemical as well as mechanical methods of structural perturbation are explored. Taken together, the studies in this thesis demonstrate that organic thin films are fragile systems, often more susceptible to external perturbation than the bulk material. For any thin film system the substrate/film and film/air interfaces as well as the extremely small quantities of film material, all affect the adsorbate material in a manner not present to a significant extent in the bulk state. All of these variables are also potential sources of failure in the film. Therefore, any organic thin film system is sensitive to its immediate surroundings, and an externally applied chemical and mechanical stimuli may 'attack' this structure on several

  16. Chalcogenide phase-change thin films used as grayscale photolithography materials.

    PubMed

    Wang, Rui; Wei, Jingsong; Fan, Yongtao

    2014-03-10

    Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

  17. Molecular precursors for solid state materials: Volatile anhydrous metal nitrates as single-source precursor molecules for the chemical vapor deposition of metal oxide thin films

    NASA Astrophysics Data System (ADS)

    Colombo, Daniel Gerard

    This thesis has focused on the use of volatile anhydrous metal nitrates as carbon- and hydrogen-free, single-source precursors for the CVD of metal oxide films. Chapter 3 discusses the low temperature CVD of crystalline TiO2 thin films using tetranitratitanium(IV), Ti(NO3)4. Ti(NO3)4 produces crystalline TiO2 films of the anatase phase in UHV-CVD at temperatures as low as 184°C. Fabricated TiO2 capacitors exhibited electrically equivalent SiO2 gate dielectric thicknesses and leakage current densities as low as 17 and 10-8 Amp·cm-2, respectively. Deposition kinetics suggested Ea = 67 kJ·mol-1 in the reaction-limited regime below 250°C. Chapter 4 describes the result that volatile anhydrous metal nitrates can be readily used to deposit metal oxide films. The precursors used included Zr(NO3)4, VO(NO3)3, Co(NO 3)4, [NO2][Ga(NO3)4], Sn(NO 3)4, CrO2(NO3)2, Hf(NO 3)4, In(NO3)3, Cu(NO3) 2, WO2(NO3)2 and MoO2(NO 3)2. Notably, zirconium(IV) nitrate, Zr(NO3) 4, was found to reproducibly deposit the high temperature cubic phase of ZrO2 on Si(100) at 400°C. The mechanism of precursor decomposition and how it leads to the stabilization of the cubic phase at low temperatures has not yet been determined. Chapter 5 describes the crystallography of nitronium tetranitratogallate(III), [NO2][Ga(NO3)4]. X-ray structure analysis of single crystals of [NO2][Ga(NO3)4] revealed that [NO2][Ga(NO3)4] undergoes a reversible, first-order phase transition from a room temperature polymorph indexed to a tetragonal cell (space group I4¯.) to a rotationally-twinned, low-temperature monoclinic polymorph (space group I2) without any apparent damage to the crystal at ˜250 K. In chapter 6, the effects of using a Lewis base to stabilize aluminum hydride complexes in low states of aggregation was probed. Several monomeric, donor-stabilized amidoalanes and a rare, dimeric, donor-stabilized imidoalane, [AlH(Quin)(mu-N-C6H3-2,6-(CH3)2)] 2 (Quin = quinuclidine), were synthesized and fully

  18. Anomalous scaling behavior and surface roughening in molecular thin-film deposition

    SciTech Connect

    Yim, S.; Jones, T. S.

    2006-04-15

    The thin film growth dynamics of a molecular semiconductor, free-base phthalocyanine (H{sub 2}Pc), deposited by organic molecular beam deposition, has been studied by atomic force microscopy (AFM) and height difference correlation function (HDCF) analysis. The measured dynamic scaling components ({alpha}{sub loc}=0.61{+-}0.12, {beta}=1.02{+-}0.08, and 1/z=0.72{+-}0.13) are consistent with rapid surface roughening and anomalous scaling behavior. A detailed analysis of AFM images and simple growth models suggest that this behavior arises from the pronounced upward growth of crystalline H{sub 2}Pc mounds during the initial stages of thin film growth.

  19. Modeling Ellipsometry Measurements of Molecular Thin-Film Contamination on Genesis Array Samples

    NASA Technical Reports Server (NTRS)

    Calaway, Michael J.; Stansbery, E. K.; McNamara, K. M.

    2006-01-01

    The discovery of a molecular thin-film contamination on Genesis flown array samples changed the course of preliminary assessment strategies. Analytical techniques developed to measure solar wind elemental abundances must now compensate for a thin-film contamination. Currently, this is done either by experimental cleaning before analyses or by depth-profiling techniques that bypass the surface contamination. Inside Johnson Space Center s Genesis dedicated ISO Class 4 (Class 10) cleanroom laboratory, the selection of collector array fragments allocated for solar wind analyses are based on the documentation of overall surface quality, visible surface particle contamination greater than 1 m, and the amount of thin film contamination measured by spectroscopic ellipsometry. Documenting the exact thickness, surface topography, and chemical composition of these contaminates is also critical for developing accurate cleaning methods. However, the first step in characterization of the molecular film is to develop accurate ellipsometry models that will determine an accurate thickness measurement of the contamination film.

  20. Molecular Packing Structure of Mesogenic Octa-Hexyl Substituted Phthalocyanine Thin Film by X-ray Diffraction Analysis.

    PubMed

    Ohmori, Masashi; Higashi, Takuya; Fujii, Akihiko; Ozaki, Masanori

    2016-04-01

    The molecular packing structure in a thin film of the liquid crystalline phthalocyanine, 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2), which is a promising small-molecular material for solution-processable organic thin-film solar cells, has been investigated by X-ray diffraction (XRD) measurement. The crystal structure of C6PcH2 in the spin-coated film was determined to be a centered rectangular structure (a = 36.4 Å, b = 20.3 Å). The tilt angle of the phthalocyanine core normal vector was 34-39° from the column axis, and the shortest intermolecular distance was 3.9-4.0 A. The crystal structure determined by XRD analysis was ascertained to be consistent with that calculated by Fourier analvsis.

  1. Molecular orientation dependence of hole-injection barrier in pentacene thin film on the Au surface in organic thin film transistor

    NASA Astrophysics Data System (ADS)

    Ihm, Kyuwook; Kim, Bongsoo; Kang, Tai-Hee; Kim, Ki-Jeong; Joo, Min Ho; Kim, Tae Hyeong; Yoon, Sang Soo; Chung, Sukmin

    2006-07-01

    We have investigated the effects of a buffer layer insertion on the performance of the pentacene based thin film transistor with a bottom contact structure. When the pentacene molecules have a standing up coordination on the Au surface that is modified by the benzenethiol or methanethiol, the transition region in the pentacene thin film is removed along the boundary between the Au and silicon oxide region, and the hole-injection barrier decreases by 0.4eV. Pentacene on various surfaces showed that the highly occupied molecular level is 0.2-0.4eV lower in the standing up coordination than in the lying down coordination.

  2. Evaporation system and method for gas jet deposition of thin film materials

    DOEpatents

    Schmitt, Jerome J.; Halpern, Bret L.

    1994-01-01

    A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

  3. Sigma-pi molecular dielectric multilayers for low-voltage organic thin-film transistors.

    PubMed

    Yoon, Myung-Han; Facchetti, Antonio; Marks, Tobin J

    2005-03-29

    Very thin (2.3-5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor structures to achieve sub-1-V operating characteristics. These new dielectrics are fabricated by means of layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well defined, strongly adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (up to approximately 2,500 nF.cm(-2)), excellent insulating properties (leakage current densities as low as 10(-9) A.cm(-2)), and single-layer dielectric constant (k)of approximately 16. These 3D self-assembled multilayers enable organic thin-film transistor function at very low source-drain, gate, and threshold voltages (<1 V) and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.

  4. Rupture mechanism of liquid crystal thin films realized by large-scale molecular simulations

    NASA Astrophysics Data System (ADS)

    Nguyen, Trung Dac; Carrillo, Jan-Michael Y.; Matheson, Michael A.; Brown, W. Michael

    2014-02-01

    The ability of liquid crystal (LC) molecules to respond to changes in their environment makes them an interesting candidate for thin film applications, particularly in bio-sensing, bio-mimicking devices, and optics. Yet the understanding of the (in)stability of this family of thin films has been limited by the inherent challenges encountered by experiment and continuum models. Using unprecedented large-scale molecular dynamics (MD) simulations, we address the rupture origin of LC thin films wetting a solid substrate at length scales similar to those in experiment. Our simulations show the key signatures of spinodal instability in isotropic and nematic films on top of thermal nucleation, and importantly, for the first time, evidence of a common rupture mechanism independent of initial thickness and LC orientational ordering. We further demonstrate that the primary driving force for rupture is closely related to the tendency of the LC mesogens to recover their local environment in the bulk state. Our study not only provides new insights into the rupture mechanism of liquid crystal films, but also sets the stage for future investigations of thin film systems using peta-scale molecular dynamics simulations.The ability of liquid crystal (LC) molecules to respond to changes in their environment makes them an interesting candidate for thin film applications, particularly in bio-sensing, bio-mimicking devices, and optics. Yet the understanding of the (in)stability of this family of thin films has been limited by the inherent challenges encountered by experiment and continuum models. Using unprecedented large-scale molecular dynamics (MD) simulations, we address the rupture origin of LC thin films wetting a solid substrate at length scales similar to those in experiment. Our simulations show the key signatures of spinodal instability in isotropic and nematic films on top of thermal nucleation, and importantly, for the first time, evidence of a common rupture mechanism

  5. Method of forming particulate materials for thin-film solar cells

    DOEpatents

    Eberspacher, Chris; Pauls, Karen Lea

    2004-11-23

    A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

  6. Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films.

    PubMed

    Peumans, Peter; Uchida, Soichi; Forrest, Stephen R

    2003-09-11

    The power conversion efficiency of small-molecular-weight and polymer organic photovoltaic cells has increased steadily over the past decade. This progress is chiefly attributable to the introduction of the donor-acceptor heterojunction that functions as a dissociation site for the strongly bound photogenerated excitons. Further progress was realized in polymer devices through use of blends of the donor and acceptor materials: phase separation during spin-coating leads to a bulk heterojunction that removes the exciton diffusion bottleneck by creating an interpenetrating network of the donor and acceptor materials. The realization of bulk heterojunctions using mixtures of vacuum-deposited small-molecular-weight materials has, on the other hand, posed elusive: phase separation induced by elevating the substrate temperature inevitably leads to a significant roughening of the film surface and to short-circuited devices. Here, we demonstrate that the use of a metal cap to confine the organic materials during annealing prevents the formation of a rough surface morphology while allowing for the formation of an interpenetrating donor-acceptor network. This method results in a power conversion efficiency 50 per cent higher than the best values reported for comparable bilayer devices, suggesting that this strained annealing process could allow for the formation of low-cost and high-efficiency thin film organic solar cells based on vacuum-deposited small-molecular-weight organic materials.

  7. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    PubMed

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  8. Low-temperature Amorphous and Nanocrystalline Silicon Materials and Thin-film Transistors

    NASA Astrophysics Data System (ADS)

    Sazonov, Andrei; Striakhilev, Denis; Nathan, Arokia

    Low-temperature processing and characterization of amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si) materials and devices are reviewed. An overview of silicon-based low-temperature thin-film dielectrics is given in the context of thin-film transistor (TFT) device operation. The low-temperature growth and synthesis of these materials are also presented and compared to conventionally fabricated high-temperature processed devices. The effect of using nc-Si contacts on a-Si:H TFTs and the stability of nc-Si TFTs is reviewed.

  9. Optical fiber magnetic field sensors with TbDyFe magnetostrictive thin films as sensing materials.

    PubMed

    Yang, Minghong; Dai, Jixiang; Zhou, Ciming; Jiang, Desheng

    2009-11-09

    Different from usually-used bulk magnetostrictive materials, magnetostrictive TbDyFe thin films were firstly proposed as sensing materials for fiber-optic magnetic field sensing characterization. By magnetron sputtering process, TbDyFe thin films were deposited on etched side circle of a fiber Bragg Grating (FBG) as sensing element. There exists more than 45pm change of FBG wavelength when magnet field increase up to 50 mT. The response to magnetic field is reversible, and could be applicable for magnetic and current sensing.

  10. Theoretical and material studies of thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.

    1989-01-01

    Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

  11. Chemistry of silicon-containing compounds and molecular approaches to materials for silicon-based microelectronics. Preparation of metal silyl complexes, studies of reactions between alkylidenes and silanes, and deposition of titanium oxide thin films

    NASA Astrophysics Data System (ADS)

    Blanton, Jaime Renee

    This dissertation describes studies of the chemistry of silicon-containing compounds and molecular approaches to silicon-based microelectronic materials. The preparation of new silyl dianions and transition metal silyl complexes, studies of the mechanism of reactions between alkylidenes and silanes, and fabrication of TiO2 thin films on Si as microelectronic gate materials are presented. Chapter 1 provides a brief overview of the field of early transition metal silyl chemistry, experimental techniques used in the research, and a summary of research conducted in each subsequent chapter. Chapter 2 describes the synthesis and characterization of new silyl dianions of the type [K(18-crown-6)] 2[(Me3Si)2Si-(CH2)n-Si(SiMe 3)2] (n = 1, 4; 2, 5; 3, 6). These represent some of the few known disilyl dianions. Crystal structures of the starting materials to 5 and 6, (Me3Si)3Si-(CH2)n-Si(SiMe 3)3, (n = 2, 2; 3, 3) were determined by X-ray diffraction studies. The preparation and characterization of novel Zr and Zn silyl complexes from the reactions of 5 with (Me 2N)3ZrCl and ZnCl2, respectively, are presented in Chapter 3. Both complexes are anionic with K(18-crown-6)+ counterions. {(Me2N)3Zr[eta2-(Me 3Si)2Si(CH2)2Si(SiMe3) 2]}- (7) consists of a five-coordinate Zr center. [K(18-crown-6)]2{[eta2-(Me3Si) 2Si(CH2)2Si(SiMe3)2]Zn 2[mu-(Me3Si)2Si(CH2)2-Si(SiMe 3)2]} (8) is the first trisilyl Zn complex. 8 is a dimer with each Zn metal center coordinated by a chelating and a bridging disilyl ligand. Chapter 4 presents new mechanistic insights into the reactions of a Ta alkylidene complex (Me3SiCH2) 3Ta(PMe3)[=CHSiMe3] (9) with H 2SiMePh. Such reactions yielded new silyl-substituted alkylidene complexes. Experiments conducted in the presence of 20-fold PMe3 were 19 times slower than those conducted with no added phosphine. Mass spectral analysis of the gaseous products from the reaction conducted in the presence of H 2 suggested hydrogen scrambling. Finally, Chapter 5 discusses the

  12. OUT Success Stories: Thin-Film PV: Leadership in Materials R and D

    SciTech Connect

    Pitchford, P.

    2000-08-31

    Photovoltaics (PV) is a modern energy technology that makes use of semiconductor materials to convert sunlight directly to electricity. The idea of thin film technology is to produce truly low-cost PV devices by using pennies worth of active semiconductor materials.

  13. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect

    Hu, W.; Peterson, R. L.

    2014-05-12

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  14. Design of camouflage material for visible and near infrared based on thin film technology

    NASA Astrophysics Data System (ADS)

    Miao, Lei; Shi, Jia-ming; Zhao, Da-peng; Liu, Hao; Wang, Chao; Xu, Yan-liang

    2015-11-01

    Visible light and near infrared based camouflage materials achieve good stealth under traditional optical detection equipment but its spectral differences with green plants can be taken advantage of by high spectrum based detection technologies. Based on the thin structure of bandpass filter, we designed an optical film with both green and near infrared spectrum. We conducted simulations using transfer matrix methods and optimized the result by simplex methods. The spectral reflectance curve of the proposed thin film matches that of green plants, and experiments show that the proposed thin film achieve good invisibility under visible light and near infrared in a wide viewing angle.

  15. Non-Traditional Spectroscopy for Analysis of Semiconductor and Photovoltaic Thin Film Materials

    NASA Astrophysics Data System (ADS)

    Li, Fuhe; Anderson, Scott

    2009-09-01

    Characterization of semiconductor thin films has long been determined by a number of traditional surface analysis techniques; Auger, ESCA/XPS, SEM-EDS and SIMS to name only a few. Depth profiles, contamination in the thin film or quantitative stoichiometry are specific application examples that predicate the technique best suited for the analysis need. The evolution of photovoltaic (PV) thin film compositions with new chemistries and growing importance of atomic layer deposition (ALD) for semiconductor and nanoscale applications provide a sustaining need for thin film analyses along with an avenue for new analytical tools. In this paper we will discuss the applications of two non-traditional material analysis techniques for the semiconductor and PV applications, glow discharge optical emission spectroscopy (RF GD-OES) and laser ablation inductively coupled plasma mass spectrometry (LA ICP-MS). Depth profiles are available via both techniques with the ability to analyze monolayers (single nm) as well as analysis in the bulk (μm thickness). Depth resolution capabilities allow analysis without surface equilibrium issues seen with other techniques. In addition, the charging effect that can cause issues with electron and ion beam techniques is avoided with RF GD-OES and LA ICP-MS, and thus analysis of both conductive and non-conductive materials is very straight-forward. Contaminant analysis in thin films is very straight-forward and elements across the periodic table are analyzed in a simultaneous mode with both techniques. Detection limits to part-per-billion levels can be achieved and quantitation at low concentrations up to 99% achieved with LA ICP-MS. Lastly, t will be discussed that for some thin film applications, LA ICP-MS and RF GD-OES provide advantages over more traditional techniques, and these aspects as well as complementary features will be discussed.

  16. Rupture mechanism of liquid crystal thin films realized by large-scale molecular simulations

    SciTech Connect

    Nguyen, Trung D; Carrillo, Jan-Michael Y; Brown, W Michael; Matheson, Michael A

    2014-01-01

    The ability of liquid crystal (LC) molecules to respond to changes in their environment makes them an interesting candidate for thin film applications, particularly in bio-sensing, bio-mimicking devices, and optics. Yet the understanding of the (in)stability of this family of thin films has been limited by the inherent challenges encountered by experiment and continuum models. Using unprecedented largescale molecular dynamics (MD) simulations, we address the rupture origin of LC thin films wetting a solid substrate at length scales similar to those in experiment. Our simulations show the key signatures of spinodal instability in isotropic and nematic films on top of thermal nucleation, and importantly, for the first time, evidence of a common rupture mechanism independent of initial thickness and LC orientational ordering. We further demonstrate that the primary driving force for rupture is closely related to the tendency of the LC mesogens to recover their local environment in the bulk state. Our study not only provides new insights into the rupture mechanism of liquid crystal films, but also sets the stage for future investigations of thin film systems using peta-scale molecular dynamics simulations.

  17. Application of nanometer material in ultraviolet prevention thin film

    NASA Astrophysics Data System (ADS)

    Guo, Aihong; Tang, Xuejiao

    2013-03-01

    To mankind, ultraviolet ray from the sun is harmful and beneficial. But, in daily life, a lot of occasions, we hope to block the ultraviolet ray. Some people studied the nanometer particles which can block Ultraviolet ray. In this paper, the protection performance of nanometer particles, prapared by sol-gel method, added into polypropylene sour to ultraviolet has been studied. In order to improve the ultraviolet blocking of the thin film, more than one kind of nanometer particles are added into the polypropylene sour, the protection performance of the thin film is strengthened. When the ratio of the volume of 2% nanometer Al2O3 sol to the volume of 3% nanometer Fe2O3 sol is 1:3, the shielding effect on the ultraviolet including UVC, UVB and UVA band is significant. When the ratio of the volume of 2% nanometer Al2O3 sol to the volume of 2% nanometer Y2O3 sol is 1:3, the shielding effect on the UVC is the best. When the ratio of the volume of 2% nanometer Al2O3 sol to the volume of 1% nanometer ZnO sol is 1:2, the shielding effect on the UVC is the best. When the ratio of the volume of 3% nanometer Fe2O3 sol to the volume of 1% nanometer ZnO sol is 1:1, the shielding effect on the UVC is the best. To UVB and UVA, the shielding effect of 3% nanometer Fe2O3 single component is the best.When the ratio of the volume of 3% nanometer Fe2O3 sol to the volume of 2% nanometer Y2O3 sol is 1:2, the shielding effect on the UVC is the best. To UVB and UVA, the shielding effect of 3% nanometer Fe2O3 single component is the best.When the ratio of the volume of 1% nanometer ZnO sol to the volume of 2% nanometer Y2O3 sol is 1:2, the shielding effect on the ultraviolet including UVC, UVB and UVA band is significant.

  18. Highly-oriented molecular arrangements and enhanced magnetic interactions in thin films of CoTTDPz using PTCDA templates.

    PubMed

    Eguchi, Keitaro; Nanjo, Chihiro; Awaga, Kunio; Tseng, Hsiang-Han; Robaschik, Peter; Heutz, Sandrine

    2016-07-14

    In the present work, the templating effect of thin layers of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) on the growth of cobalt tetrakis(thiadiazole)porphyrazine (CoTTDPz) thin films was examined. X-ray diffraction and optical absorption spectra indicate that while CoTTDPz forms amorphous thin films on the bare substrates, it forms crystalline thin films on the PTCDA templates, in which the molecular planes of CoTTDPz are considered to be parallel to the substrates. Magnetic measurements reveal a significantly enhanced antiferromagnetic interaction of CoTTDPz in the templated thin films, with values reaching over 13 K. The ability to generate crystalline films and to control their orientation using molecular templates is an important strategy in the fields of organic electronics and spintronics in order to tailor the physical properties of organic thin films to suit their intended application.

  19. Thin Film Delamination Using a High Power Pulsed Laser Materials Interaction

    NASA Astrophysics Data System (ADS)

    Sherman, Bradley

    Thin films attached to substrates are only effective while the film is adhered to the substrate. When the film begins to spall the whole system can fail, thus knowing the working strength of the film substrate system is important when designing structures. Surface acoustic waves (SAWs) are suitable for characterization of thin film mechanical properties due to the confinement of their energy within a shallow depth from a material surface. In this project, we study the feasibility of inducing dynamic interfacial failure in thin films using surface waves generated by a high power pulsed laser. Surface acoustic waves are modeled using a finite element numerical code, where the ablative interaction between the pulsed laser and the incident film is modeled using equivalent surface mechanical stresses. The numerical results are validated using experimental results from a laser ultrasonic setup. Once validated the normal film-substrate interfacial stress can be extracted from the numerical code and tends to be in the mega-Pascal range. This study uses pulsed laser generation to produce SAW in various metallic thin film/substrate systems. Each system varies in its response based on its dispersive relationship and as such requires individualized numerical modeling to match the experimental data. In addition to pulsed SAW excitation using an ablative source, a constrained thermo-mechanical load produced by the ablation of a metal film under a polymer layer is explored to generate larger dynamic mechanical stresses. These stresses are sufficient to delaminate the thin film in a manner similar to a peel test. However, since the loading is produced by a pulsed laser source, it occurs at a much faster rate, limiting the influence of slower damage modes that are present in quasi-static loading. This approach is explored to predict the interfacial fracture toughness of weak thin film interfaces.

  20. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  1. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  2. Tuning optoelectronic properties and understanding charge transport in nanocrystal thin films of earth abundant semiconducting materials

    NASA Astrophysics Data System (ADS)

    Riha, Shannon C.

    2011-12-01

    With the capability of producing nearly 600 TW annually, solar power is one renewable energy source with the potential to meet a large fraction of the world's burgeoning energy demand. To make solar technology cost-competitive with carbon-based fuels, cheaper devices need to be realized. Solution-processed solar cells from nanocrystal inks of earth abundant materials satisfy this requirement. Nonetheless, a major hurdle in commercializing such devices is poor charge transport through nanocrystal thin films. The efficiency of charge transport through nanocrystal thin films is strongly dependent on the quality of the nanocrystals, as well as their optoelectronic properties. Therefore, the first part of this dissertation is focused on synthesizing high quality nanocrystals of Cu2ZnSnS4, a promising earth abundant photovoltaic absorber material. The optoelectronic properties of the nanocrystals were tuned by altering the copper to zinc ratio, as well as by introducing selenium to create Cu2ZnSn(S1-xSe x)4 solid solutions. Photoelectrochemical characterization was used to test the Cu2ZnSnS4 and Cu2ZnSn(S 1-xSex)4 nanocrystal thin films. The results identify minority carrier diffusion and recombination via the redox shuttle as the major loss mechanisms hindering efficient charge transport through the nanocrystal thin films. One way to solve this issue is to sinter the nanocrystals together, creating large grains for efficient charge transport. Although this may be quick and effective, it can lead to the formation of structural defects, among other issues. To this end, using a different copper-based material, namely Cu2Se, and simple surface chemistry treatments, an alternative route to enhance charge transport through nanocrystals thin films is proposed.

  3. Molecular-Orientation-Induced Rapid Roughening and Morphology Transition in Organic Semiconductor Thin-Film Growth

    PubMed Central

    Yang, Junliang; Yim, Sanggyu; Jones, Tim S.

    2015-01-01

    We study the roughening process and morphology transition of organic semiconductor thin film induced by molecular orientation in the model of molecular semiconductor copper hexadecafluorophthalocyanine (F16CuPc) using both experiment and simulation. The growth behaviour of F16CuPc thin film with the thickness, D, on SiO2 substrate takes on two processes divided by a critical thickness: (1) D ≤ 40 nm, F16CuPc thin films are composed of uniform caterpillar-like crystals. The kinetic roughening is confirmed during this growth, which is successfully analyzed by Kardar-Parisi-Zhang (KPZ) model with scaling exponents α = 0.71 ± 0.12, β = 0.36 ± 0.03, and 1/z = 0.39 ± 0.12; (2) D > 40 nm, nanobelt crystals are formed gradually on the caterpillar-like crystal surface and the film growth shows anomalous growth behaviour. These new growth behaviours with two processes result from the gradual change of molecular orientation and the formation of grain boundaries, which conversely induce new molecular orientation, rapid roughening process, and the formation of nanobelt crystals. PMID:25801646

  4. Molecular-orientation-induced rapid roughening and morphology transition in organic semiconductor thin-film growth.

    PubMed

    Yang, Junliang; Yim, Sanggyu; Jones, Tim S

    2015-03-24

    We study the roughening process and morphology transition of organic semiconductor thin film induced by molecular orientation in the model of molecular semiconductor copper hexadecafluorophthalocyanine (F16CuPc) using both experiment and simulation. The growth behaviour of F16CuPc thin film with the thickness, D, on SiO2 substrate takes on two processes divided by a critical thickness: (1) D ≤ 40 nm, F16CuPc thin films are composed of uniform caterpillar-like crystals. The kinetic roughening is confirmed during this growth, which is successfully analyzed by Kardar-Parisi-Zhang (KPZ) model with scaling exponents α = 0.71 ± 0.12, β = 0.36 ± 0.03, and 1/z = 0.39 ± 0.12; (2) D > 40 nm, nanobelt crystals are formed gradually on the caterpillar-like crystal surface and the film growth shows anomalous growth behaviour. These new growth behaviours with two processes result from the gradual change of molecular orientation and the formation of grain boundaries, which conversely induce new molecular orientation, rapid roughening process, and the formation of nanobelt crystals.

  5. Molecular orientation in soft matter thin films studied by resonant soft X-ray reflectivity

    SciTech Connect

    Mezger, Markus; Jerome, Blandine; Kortright, Jeffrey B.; Valvidares, Manuel; Gullikson, Eric; Giglia, Angelo; Mahne, Nicola; Nannarone, Stefano

    2011-01-12

    We present a technique to study depth profiles of molecular orientation in soft matter thin films with nanometer resolution. The method is based on dichroism in resonant soft X-ray reflectivity using linear s- and p-polarization. It combines the chemical sensitivity of Near-Edge X-ray Absorption Fine Structure spectroscopy to specific molecular bonds and their orientation relative to the polarization of the incident beam with the precise depth profiling capability of X-ray reflectivity. We demonstrate these capabilities on side chain liquid crystalline polymer thin films with soft X-ray reflectivity data at the carbon K edge. Optical constants of the anisotropic refractive index ellipsoid were obtained from a quantitative analysis using the Berreman formalism. For films up to 50 nm thickness we find that the degree of orientation of the long axis exhibits no depth variation and isindependent of the film thickness.

  6. Molecular Aspects of Transport in Thin Films of Controlled Architecture

    SciTech Connect

    Paul W. Bohn

    2009-04-16

    coupled to analyte sampling both by LIF and mass spectrometry. Detection of electrophoresis separation products by electrospray mass spectrometry was achieved through direct interfacing to an electrospray mass spectrometer. Pb(II) interactions with the DNAzyme have been realized in an NCAM-coupled integrated microfluidic structure allowing cation separations to be coupled to molecular beacon detection motifs for the determination of Pb(II) in an electroplating sludge reference material. By changing the DNAzyme to select for other compounds of interest, it is possible to incorporate multiple sensing systems within a single device, thereby achieving great flexibility.

  7. Control method and system for use when growing thin-films on semiconductor-based materials

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    2001-01-01

    A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.

  8. Determination of Structural Parameters of Thin-Film Photocatalytic Materials by BDS

    NASA Astrophysics Data System (ADS)

    Korte, Dorota; Franko, Mladen

    2015-09-01

    A method for determination of structural parameters of some thin-film photocatalytic materials is presented. The analysis was based on the material's thermal parameter dependences on its surface structure or porosity and was thus performed by the use of beam deflection spectroscopy (BDS) supported by theoretical analysis made in the framework of complex geometrical optics. The results obtained by BDS were than compared with those received on the basis of AFM and SEM measurements and found to be in good agreement.

  9. Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and their Characterization

    DTIC Science & Technology

    1993-12-01

    U AD-A274 325 Semiannual Technical Report U Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their... Group IV Materials: Surface Processes, Thin 414v001---01 Films, Devices and Their Characterization 1114SS S. AUTHOS) N00179 Robert F. Davis, Salah... Conformal deposition of SiC has been demonstrated within trenches etched into Si(100) wafers. P-type films have also been achieved using Al as a

  10. Effect of Initial Bulk Material Composition on Thermoelectric Properties of Bi2Te3 Thin Films

    NASA Astrophysics Data System (ADS)

    Budnik, A. V.; Rogacheva, E. I.; Pinegin, V. I.; Sipatov, A. Yu.; Fedorov, A. G.

    2013-07-01

    V2VI3 compounds and solid solutions based on them are known to be the best low-temperature thermoelectric (TE) materials. The predicted possibility of enhancement of the TE figure of merit in two-dimensional (2D) structures has stimulated studies of the properties of these materials in the thin-film state. The goal of the present work is to study the dependences of the Seebeck coefficient S, electrical conductivity σ, Hall coefficient R H, charge carrier mobility μ H, and TE power factor P = S 2 σ of Bi2Te3 thin films on the composition of the initial bulk material used for preparing them. Thin films with thickness d = 200 nm to 250 nm were grown by thermal evaporation in vacuum of stoichiometric Bi2Te3 crystals (60.0 at.% Te) and of crystals with 62.8 at.% Te onto glass substrates at temperatures T S of 320 K to 500 K. It was established that the conductivity type of the initial material is reproduced in films fairly well. For both materials, an increase in T S leads to an increase in the thin-film structural perfection, better correspondence between the film composition and that of the initial material, and increase in S, R H, μ H, σ, and P. The room-temperature maximum values of P for the films grown from crystals with 60.0 at.% and 62.8 at.% Te are P = 7.5 × 10-4 W/K2 m and 35 × 10-4 W/K2 m, respectively. Thus, by using Bi2Te3 crystals with different stoichiometry as initial materials, one can control the conductivity type and TE parameters of the films, applying a simple and low-cost method of thermal evaporation from a single source.

  11. Role of Molecular Conformations in Rubrene Thin Film Growth

    SciTech Connect

    Kaefer, D.; Ruppel, L.; Witte, G.; Woell, Ch.

    2005-10-14

    A systematic analysis of the growth of rubrene (C{sub 42}H{sub 28}), an organic molecule that currently attracts considerable attention with regard to its application in molecular electronics, is carried out by using x-ray absorption spectroscopy and thermal desorption spectroscopy. The results allow us to unravel a fundamental mechanism that effectively limits organic epitaxy for a large class of organic molecules. If the structure of the free molecule differs substantially from that of the corresponding molecular structure in the bulk, the crystallization is severely hampered.

  12. Reduced graphene oxide/molecular imprinted polymer-organic thin film transistor for amino acid detection

    NASA Astrophysics Data System (ADS)

    Halim, Nurul Farhanah AB.; Musa, Nur Hazwani; Zakaria, Zulkhairi; Von Schleusingen, Mubaraq; Ahmad, Mohd Noor; Derman, Nazree; Shakaff, Ali Yeon Md.

    2017-03-01

    This works reports the electrical performance of reduced graphene oxide (RGO)/Molecular imprinted polymer (MIP)- organic thin film transistor (OTFT) for amino-acid detection, serine. These biomimetic sensors consider MIP as man-tailored biomimetic recognition sites that play an important role in signal transduction. MIP provides recognition sites compatible with serine molecules was developed by dispersing serine with methylacrylate acid (MAA) as functional monomer and Ethylene glycol dimethylacrylate (EGDMA) as cross-linker. The imprinted polymeric were mixed with reduced graphene oxide to produced sensing layer for the sensor. RGO-MIP layer was introduced between source and drain of OTFT via spin coating as a detecting layer for serine molecules. RGO was introduced into MIP, to allow a highly conductive sensing material thus enhanced selectivity and sensitivity of the sensor. By analyzing the electrical performance of the sensors, the performances of OTFT sensor enhanced with RGO/MIP interlayer and OTFT sensor with MIP interlayer when exposed to serine analyte were obtained. The results showed that there were remarkable shifts of drain current (ID) obtained from OTFT sensor with RGO/MIP interlayer after exposed to serine analyte. Moreover, the sensitivity of OTFT sensor with RGO/MIP interlayer was nearly higher than the OTFT sensor with MIP interlayer. Hence, it proved that RGO successfully enhanced the sensing performance of OTFT sensor.

  13. Evaporation system and method for gas jet deposition of thin film materials

    DOEpatents

    Schmitt, J.J.; Halpern, B.L.

    1994-10-18

    A method and apparatus are disclosed for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases. 8 figs.

  14. Centrifugation-based Purification of Emerging Low-dimensional Materials and Their Thin-film Applications

    NASA Astrophysics Data System (ADS)

    Seo, Jung Woo

    Polydispersity in low-dimensional materials offers many interesting challenges and properties. In particular, the one- and two-dimensional carbon allotropes such as carbon nanotubes and graphene have demonstrated exquisite optoelectronic properties that are highly sensitive to their physical structures, where subtle variations in diameter and thickness render them with significantly different electronic band structures. Thus, the carbon nanomaterials have been the subject of extensive studies that address their polydispersity issues. Among these, solution-phase, buoyant density-based methods such as density gradient ultracentrifugation have been widely utilized to enrich subpopulations of carbon nanotubes and graphene with narrow distribution in diameter and thickness, enabling their applications in various next-generation thin-film devices. In this thesis, I present further advancement of centrifugation-based processing methods for emerging low-dimensional materials through systematic utilization of previously explored surfactant systems, development of novel surfactant types, and study of correlation between the chemical structure of surfactants and the dispersion and optoelectronic properties of the nanomaterials. First, I employ an iterative density gradient ultracentrifugation with a combination of anionic surfactants and addition of excess counter-ions to achieve isolation of novel diameter species of semiconducting single-walled carbon nanotubes. The purification of carbon nanotubes with simultaneous, ultrahigh-purity refinement in electronic type and diameter distribution leads to collaborative studies on heat distribution characteristics and diameter-dependent direct current and radio frequency performances in monodisperse carbon nanotube thin-film transistors. Next, I develop the use of non-ionic polymeric surfactants for centrifugation-based processes. Specifically, I utilize polypropylene and polyethylene oxide-based block copolymers with density

  15. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    Electroluminescent materials and device technology were assessed. The evaluation strongly suggests the need for a comprehensive theoretical and experimental study of both materials and device structures, particularly in the following areas: carrier generation and multiplication; radiative and nonradiative processes of luminescent centers; device modeling; new device concepts; and single crystal materials growth and characterization. Modeling of transport properties of hot electrons in ZnSe and the generation of device concepts were initiated.

  16. Magnetic Properties of FeNi-Based Thin Film Materials with Different Additives.

    PubMed

    Liang, Cai; Gooneratne, Chinthaka P; Wang, Qing Xiao; Liu, Yang; Gianchandani, Yogesh; Kosel, Jurgen

    2014-09-01

    This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials attractive for sensor applications. Our findings show that FeNi deposited with Mo or Al yields magnetically soft materials and that depositing with B further increases the softness. The out-of-plane magnetic anisotropy of FeNi thin films is reduced by depositing with Al and completely removed by depositing with B. The effect of depositing with Mo is dependent on the Mo concentration. The coercivity of FeNiMo and FeNiAl is reduced to less than a half of that of FeNi, and a value as low as 40 A/m is obtained for FeNiB. The surfaces of the obtained FeNiMo, FeNiAl and FeNiB thin films reveal very different morphologies. The surface of FeNiMo shows nano-cracks, while the FeNiAl films show large clusters and fewer nano-cracks. When FeNi is deposited with B, a very smooth morphology is obtained. The crystal structure of FeNiMo strongly depends on the depositant concentration and changes into an amorphous structure at a higher Mo level. FeNiAl thin films remain polycrystalline, even at a very high concentration of Al, and FeNiB films are amorphous, even at a very low concentration of B.

  17. Magnetic Properties of FeNi-Based Thin Film Materials with Different Additives

    PubMed Central

    Liang, Cai; Gooneratne, Chinthaka P.; Wang, Qing Xiao; Liu, Yang; Gianchandani, Yogesh; Kosel, Jurgen

    2014-01-01

    This paper presents a study of FeNi-based thin film materials deposited with Mo, Al and B using a co-sputtering process. The existence of soft magnetic properties in combination with strong magneto-mechanical coupling makes these materials attractive for sensor applications. Our findings show that FeNi deposited with Mo or Al yields magnetically soft materials and that depositing with B further increases the softness. The out-of-plane magnetic anisotropy of FeNi thin films is reduced by depositing with Al and completely removed by depositing with B. The effect of depositing with Mo is dependent on the Mo concentration. The coercivity of FeNiMo and FeNiAl is reduced to less than a half of that of FeNi, and a value as low as 40 A/m is obtained for FeNiB. The surfaces of the obtained FeNiMo, FeNiAl and FeNiB thin films reveal very different morphologies. The surface of FeNiMo shows nano-cracks, while the FeNiAl films show large clusters and fewer nano-cracks. When FeNi is deposited with B, a very smooth morphology is obtained. The crystal structure of FeNiMo strongly depends on the depositant concentration and changes into an amorphous structure at a higher Mo level. FeNiAl thin films remain polycrystalline, even at a very high concentration of Al, and FeNiB films are amorphous, even at a very low concentration of B. PMID:25587418

  18. Simulation studies of the tribological behavior of molecularly thin films

    NASA Astrophysics Data System (ADS)

    He, Gang

    2002-09-01

    In this thesis I used molecular dynamics simulations to study two nanotribological problems. The first is the frictional behavior of adsorbed molecules. Macroscopic objects almost always exhibit a finite static friction and a kinetic friction that is slightly smaller at low velocities. However, molecular scale theories of friction between bare surfaces predict that the static friction almost always vanishes and is not closely related to the kinetic friction. Of course most real surfaces are not bare, but are coated with a layer of adsorbed molecules. Our simulation results show that these molecules naturally lead to a finite static friction that is consistent with macroscopic friction laws. We found that parameters that are not controlled in experiments, i.e., crystalline alignment, sliding direction, and the number of adsorbed molecules have little effect on the friction. Temperature, molecular geometry and interaction potentials can have larger effects on friction. The kinetic friction is found to rise logarithmically with velocity as in many experimental systems. Variations in static and kinetic friction are highly correlated. This correlation is understood through analogy with the Tomlinson model and the trends are explained with a hard-sphere picture. We also studied the microscopic flow boundary condition due to rough surfaces: Generally slip at the interface can be quantified by a slip length S that represents the additional width of fluid that would be needed to accommodate any velocity difference at the interface. Previous simulations with atomically flat surfaces show that S can be very large in certain limits. A dramatic divergence of S as shear rate increases has also been reported. We have extended these simulations to surfaces with random roughness, steps, and angled facets typical of twin boundaries. In all cases, S decreases rapidly as the roughness increases. When peak-to-peak roughness is only two atomic diameters, values of S have dropped from

  19. Recent progress in high-mobility thin-film transistors based on multilayer 2D materials

    NASA Astrophysics Data System (ADS)

    Hong, Young Ki; Liu, Na; Yin, Demin; Hong, Seongin; Kim, Dong Hak; Kim, Sunkook; Choi, Woong; Yoon, Youngki

    2017-04-01

    Two-dimensional (2D) layered semiconductors are emerging as promising candidates for next-generation thin-film electronics because of their high mobility, relatively large bandgap, low-power switching, and the availability of large-area growth methods. Thin-film transistors (TFTs) based on multilayer transition metal dichalcogenides or black phosphorus offer unique opportunities for next-generation electronic and optoelectronic devices. Here, we review recent progress in high-mobility transistors based on multilayer 2D semiconductors. We describe the theoretical background on characterizing methods of TFT performance and material properties, followed by their applications in flexible, transparent, and optoelectronic devices. Finally, we highlight some of the methods used in metal-semiconductor contacts, hybrid structures, heterostructures, and chemical doping to improve device performance.

  20. Self-regulated growth of LaVO{sub 3} thin films by hybrid molecular beam epitaxy

    SciTech Connect

    Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

    2015-06-08

    LaVO{sub 3} thin films were grown on SrTiO{sub 3} (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO{sub 3} films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application.

  1. Novel photoresist thin films with in-situ photoacid generator by molecular layer deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Han; Bent, Stacey F.

    2013-03-01

    Current photoresist materials are facing many challenges introduced by advanced lithographies, particularly the need for excellent compositional homogeneity and ultrathin film thickness. Traditional spin-on polymeric resists have inherent limitations in achieving a high level of control over the chemical composition, leading to interest in development of alternative methods for making photoresists. In this work, we demonstrate that molecular layer deposition (MLD) is a potential method for synthesizing photoresists because it allows for precise control over organic film thickness and composition. MLD utilizes sequential, self-limiting reactions of organic precursors to build a thin film directly on a substrate surface and grows organic films by depositing only one molecular layer at each precursor dose, which in turn allows for fine-tuning of the position and concentration of various functionalities in the deposited film. In this study, we use bifunctional precursors, diamine and diisocyanate, to build polyurea resist films via urea coupling reaction between the amine and isocyanate groups. Acid-labile groups and photoacid generators (PAGs) are embedded in the backbone of the resist films with a highly uniform distribution. The resist films were successfully deposited and characterized for both materials properties and resist response. E-beam patterning was achieved with the resist films. Cross-linking behavior of the resist films was observed, likely due to the aromatic rings in the films, which is undesirable for application as a positive-tone photoresist. Moreover, the in-situ polymer-bound PAGs had low sensitivity. It is suggested that this effect may arise because the PAG is cation-bound, leading to lower efficiency of sulfur-carbon bond cleavage in the sulfonium cation, which is needed to produce the photoacid, and consequently a lower photoacid yield. Further work is needed to improve the performance of the MLD resist films.

  2. Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material.

    PubMed

    Hauser, Christoph; Richter, Tim; Homonnay, Nico; Eisenschmidt, Christian; Qaid, Mohammad; Deniz, Hakan; Hesse, Dietrich; Sawicki, Maciej; Ebbinghaus, Stefan G; Schmidt, Georg

    2016-02-10

    We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15 ± 1.50) · 10(-5) is found and the linewidth at 9.6 GHz is as small as 1.30 ± 0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35 ± 1.40) · 10(-5) is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49 ± 0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials.

  3. Frequency-domain Harman technique for rapid characterization of bulk and thin film thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Moran, Samuel

    Nanostructured thermoelectrics, often in the form of thin films, may potentially improve the generally poor efficiency of bulk thermoelectric power generators and coolers. In order to characterize the efficiency of these new materials it is necessary to measure their thermoelectric figure of merit, ZT. The only direct measurement of ZT is based on the Harman technique and relies on measuring the voltage drop across a sample subjected to a passing continuous current. Application of this technique to thin films is currently carried out as a time-domain measurement of the voltage as the thermal component decays after switching off an applied voltage. This work develops a technique for direct simultaneous measurement of figure of merit and Seebeck coefficient from the harmonic response of a thermoelectric material under alternating current excitation. A thermocouple mounted on the top surface measures voltage across the device as the frequency of the applied voltage is varied. A thermal model allows the sample thermal conductivity to also be determined and shows good agreement with measurements. This technique provides improved signal-to-noise ratio and accuracy compared to time-domain ZT measurements for comparable conditions while simultaneously measuring Seebeck coefficient. The technique is applied to both bulk and thin film thermoelectric samples.

  4. Full potential of radial junction Si thin film solar cells with advanced junction materials and design

    NASA Astrophysics Data System (ADS)

    Qian, Shengyi; Misra, Soumyadeep; Lu, Jiawen; Yu, Zhongwei; Yu, Linwei; Xu, Jun; Wang, Junzhuan; Xu, Ling; Shi, Yi; Chen, Kunji; Roca i Cabarrocas, Pere

    2015-07-01

    Combining advanced materials and junction design in nanowire-based thin film solar cells requires a different thinking of the optimization strategy, which is critical to fulfill the potential of nano-structured photovoltaics. Based on a comprehensive knowledge of the junction materials involved in the multilayer stack, we demonstrate here, in both experimental and theoretical manners, the potential of hydrogenated amorphous Si (a-Si:H) thin film solar cells in a radial junction (RJ) configuration. Resting upon a solid experimental basis, we also assess a more advanced tandem RJ structure with radially stacking a-Si:H/nanocrystalline Si (nc-Si:H) PIN junctions, and show that a balanced photo-current generation with a short circuit current density of Jsc = 14.2 mA/cm2 can be achieved in a tandem RJ cell, while reducing the expensive nc-Si:H absorber thickness from 1-3 μ m (in planar tandem cells) to only 120 nm. These results provide a clearly charted route towards a high performance Si thin film photovoltaics.

  5. Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material

    PubMed Central

    Hauser, Christoph; Richter, Tim; Homonnay, Nico; Eisenschmidt, Christian; Qaid, Mohammad; Deniz, Hakan; Hesse, Dietrich; Sawicki, Maciej; Ebbinghaus, Stefan G.; Schmidt, Georg

    2016-01-01

    We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15 ± 1.50) · 10−5 is found and the linewidth at 9.6 GHz is as small as 1.30 ± 0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35 ± 1.40) · 10−5 is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49 ± 0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials. PMID:26860816

  6. Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material

    NASA Astrophysics Data System (ADS)

    Hauser, Christoph; Richter, Tim; Homonnay, Nico; Eisenschmidt, Christian; Qaid, Mohammad; Deniz, Hakan; Hesse, Dietrich; Sawicki, Maciej; Ebbinghaus, Stefan G.; Schmidt, Georg

    2016-02-01

    We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15 ± 1.50) · 10‑5 is found and the linewidth at 9.6 GHz is as small as 1.30 ± 0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35 ± 1.40) · 10‑5 is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49 ± 0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials.

  7. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Benz, R., II

    1987-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as accessed by x ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  8. SAW chemical sensor arrays using new thin-film materials

    SciTech Connect

    Ricco, A.J.; Xu, Chuanjing; Crooks, R.M.; Allred, R.E.

    1994-05-01

    We have used two classes of materials, self-assembled monolayers (SAMs) and plasma-grafted films (PGFs), as new chemically sensitive layers for an array of 97-MHz surface acoustic wave (SAW) delay-line-based devices. Responses of these materials to each of 14 different analytes, representing the classes of saturated alkane, aromatic hydrocarbon, chlorinated hydrocarbon, alcohol, ketone, organophosphonate, and water, have been evaluated using our six-SAW device array. Results reveal a qualitative ``chemical orthogonality`` of the films that is very promising for pattern recognition analysis.

  9. Molecular beam epitaxy deposition of Gd2O3 thin films on SrTiO3 (100) substrate

    NASA Astrophysics Data System (ADS)

    Wang, Jinxing; Hao, Jinghua; Zhang, Yangyang; Wei, Hongmei; Mu, Juyi

    2016-06-01

    Gd2O3 thin films are grown on the SrTiO3 (100) substrate by molecular beam epitaxy (MBE) deposition. X-ray diffraction (XRD) analysis, conventional transmission electron microscopy (TEM) and aberration-corrected scanning transmission electron microscopy (STEM) are performed to investigate the microstructure of deposited thin films. It is found that the as-deposited thin film possesses a very uniform thickness of ∼40 nm and is composed of single cubic phase Gd2O3 grains. STEM and TEM observations reveal that Gd2O3 thin film grows epitaxially on the SrTiO3 (100) substrate with (001)Gd2O3//(100)STO and [110]Gd2O3//[001]STO orientations. Furthermore, the Gd atoms are found to diffuse into the SrTiO3 substrate for a depth of one unit cell and substitute for the Sr atoms near the interface.

  10. Simultaneous measurement of thermal conductivity and heat capacity of bulk and thin film materials using frequency-dependent transient thermoreflectance method.

    PubMed

    Liu, Jun; Zhu, Jie; Tian, Miao; Gu, Xiaokun; Schmidt, Aaron; Yang, Ronggui

    2013-03-01

    The increasing interest in the extraordinary thermal properties of nanostructures has led to the development of various measurement techniques. Transient thermoreflectance method has emerged as a reliable measurement technique for thermal conductivity of thin films. In this method, the determination of thermal conductivity usually relies much on the accuracy of heat capacity input. For new nanoscale materials with unknown or less-understood thermal properties, it is either questionable to assume bulk heat capacity for nanostructures or difficult to obtain the bulk form of those materials for a conventional heat capacity measurement. In this paper, we describe a technique for simultaneous measurement of thermal conductivity κ and volumetric heat capacity C of both bulk and thin film materials using frequency-dependent time-domain thermoreflectance (TDTR) signals. The heat transfer model is analyzed first to find how different combinations of κ and C determine the frequency-dependent TDTR signals. Simultaneous measurement of thermal conductivity and volumetric heat capacity is then demonstrated with bulk Si and thin film SiO2 samples using frequency-dependent TDTR measurement. This method is further testified by measuring both thermal conductivity and volumetric heat capacity of novel hybrid organic-inorganic thin films fabricated using the atomic∕molecular layer deposition. Simultaneous measurement of thermal conductivity and heat capacity can significantly shorten the development∕discovery cycle of novel materials.

  11. Atomic/Molecular Layer Deposition of Lithium Terephthalate Thin Films as High Rate Capability Li-Ion Battery Anodes.

    PubMed

    Nisula, Mikko; Karppinen, Maarit

    2016-02-10

    We demonstrate the fabrication of high-quality electrochemically active organic lithium electrode thin films by the currently strongly emerging combined atomic/molecular layer deposition (ALD/MLD) technique using lithium terephthalate, a recently found anode material for lithium-ion battery (LIB), as a proof-of-the-concept material. Our deposition process for Li-terephthalate is shown to well comply with the basic principles of ALD-type growth including the sequential self-saturated surface reactions, a necessity when aiming at micro-LIB devices with three-dimensional architectures. The as-deposited films are found crystalline across the deposition temperature range of 200-280 °C, which is a trait highly desired for an electrode material but rather unusual for hybrid inorganic-organic thin films. Excellent rate capability is ascertained for the Li-terephthalate films with no conductive additives required. The electrode performance can be further enhanced by depositing a thin protective LiPON solid-state electrolyte layer on top of Li-terephthalate; this yields highly stable structures with capacity retention of over 97% after 200 charge/discharge cycles at 3.2 C.

  12. Development of a Thin Film Magnetic Moment Reference Material

    PubMed Central

    Pappas, D. P.; Halloran, S. T.; Owings, R. R.; da Silva, F. C. S.

    2008-01-01

    In this paper we present the development of a magnetic moment reference material for low moment magnetic samples. We first conducted an inter-laboratory comparison to determine the most useful sample dimensions and magnetic properties for common instruments such as vibrating sample magnetometers (VSM), SQUIDs, and alternating gradient field magnetometers. The samples were fabricated and then measured using a vibrating sample magnetometer. Their magnetic moments were calibrated by tracing back to the NIST YIG sphere, SRM 2853. PMID:27096108

  13. Dispersion-model-free determination of optical constants: application to materials for organic thin film devices.

    PubMed

    Flämmich, Michael; Danz, Norbert; Michaelis, Dirk; Bräuer, Andreas; Gather, Malte C; Kremer, Jonas H-W M; Meerholz, Klaus

    2009-03-10

    We describe a method to determine the refractive index and extinction coefficient of thin film materials without prior knowledge of the film thickness and without the assumption of a dispersion model. A straightforward back calculation to the optical parameters can be performed starting from simple measurements of reflection and transmission spectra of a 100-250 nm thick supported film. The exact film thickness is found simultaneously by fulfilling the intrinsic demand of continuity of the refractive index as a function of wavelength. If both the layer and the substrate are homogeneous and isotropic media with plane and parallel interfaces, effects like surface roughness, scattering, or thickness inhomogeneities can be neglected. Then, the accuracy of the measurement is approximately 10(-2) and 10(-3) for the refractive index and the extinction coefficient, respectively. The error of the thin film thickness determination is well below 1 nm. Thus this technique is well suited to determine the input parameters for optical simulations of organic thin film devices, such as organic light-emitting diodes (OLEDs) or organic photovoltaic (OPV) cells. We apply the method to the electroluminescent polymer poly(2,5-dioctyl-p-phenylene vinylene) (PDO-PPV) and show its applicability by comparing the measured and calculated reflection and transmission spectra of OLED stacks with up to five layers.

  14. Chemical-bath deposition of ZnSe thin films: Process and material characterization

    SciTech Connect

    Dona, J.M.; Herrero, J.

    1995-03-01

    Chemical-bath deposition of ZnSe thin films from NH{sub 3}/NH{sub 2}-NH{sub 2}/SeC(NH{sub 2}){sub 2}/Na{sub 2}SO{sub 3}/ZnSO{sub 4} solutions has been studied. The effect of various process parameters on the growth and the film quality is presented. A first approach to a mechanistic interpretation of the chemical process, based on the influence of the process parameters on the film growth rate, is reported. The structural, optical, chemical, and electrical properties of the ZnSe thin-films deposited by this method have been studied. The electron diffraction (EDS) analysis shows that the films are microcrystalline with mixed cubic and hexagonal structure. EDS analysis has demonstrated that the films are highly stoichiometric. Scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy studies of the ZnSe thin films deposited by this method show that the films are continuous and homogeneous. Optical measurements have allowed the authors to detect the presence of the spin-orbit splitting effect in this material. Electrical conductivity measurements have shown the highly resistive nature of these films ({rho} {approximately} 10{sup 9} {Omega} cm).

  15. Polycrystalline thin film materials and devices. Final subcontract report, 16 January 1990--15 January 1993

    SciTech Connect

    Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.; Yokimcus, T.A.

    1993-08-01

    This report describes results and conclusions of the final phase (III) of a three-year research program on polycrystalline thin-film heterojunction solar cells. The research consisted of the investigation of the relationships between processing, materials properties, and device performance. This relationship was quantified by device modeling and analysis. The analysis of thin-film polycrystalline heterojunction solar cells explains how minority-carrier recombination at the metallurgical interface and at grain boundaries can be greatly reduced by the proper doping of the window and absorber layers. Additional analysis and measurements show that the present solar cells are limited by the magnitude of the diode current, which appears to be caused by recombination in the space charge region. Developing an efficient commercial-scale process for fabricating large-area polycrystalline, thin-film solar cells from a research process requires a detailed understanding of the individual steps in making the solar cell, and their relationship to device performance and reliability. The complexities involved in characterizing a process are demonstrated with results from our research program on CuInSe{sub 2}, and CdTe processes.

  16. Thin-film growth and patterning techniques for small molecular organic compounds used in optoelectronic device applications.

    PubMed

    Biswas, Shaurjo; Shalev, Olga; Shtein, Max

    2013-01-01

    Rapid advances in research and development in organic electronics have resulted in many exciting discoveries and applications, including organic light-emitting devices for information display and illumination, solar cells, photodetectors, chemosensors, and logic. Organic optoelectronic materials are broadly classified as polymeric or small molecular. For the latter category, solvent-free deposition techniques are generally preferred to form well-defined interfaces and improve device performance. This article reviews several deposition and patterning methods for small molecular thin films and devices, including organic molecular beam deposition, vacuum thermal evaporation, organic vapor phase deposition, and organic vapor jet printing, and compares them to several other methods that have been proposed recently. We hope this review provides a compact but informative summary of the state of the art in organic device processing and addresses the various techniques' governing physical principles.

  17. Development of Novel Magnetic Metal Oxide Thin Films and Carbon Nanotube Materials for Potential Device Applications

    DTIC Science & Technology

    2016-05-09

    spin spring materials .”To study this possibility, we extended our investigation to the synthesis of CoFe2O4/CoFe2/CoFe2O4 trilayers under different...09-05-2016 18-May-2011 17-May-2014 Final Report: Development of Novel Magnetic Metal Oxide Thin Films and Carbon Nanotube Materials for Potential...U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 Nanomagnetics, carbon nanotubes, multilayer materials , spin

  18. Crystallographic dependence of photocatalytic activity of WO3 thin films prepared by molecular beam epitaxy.

    PubMed

    Li, Guoqiang; Varga, Tamas; Yan, Pengfei; Wang, Zhiguo; Wang, Chongmin; Chambers, Scott A; Du, Yingge

    2015-06-21

    We investigated the impact of crystallographic orientation on the photocatalytic activity of single crystalline WO3 thin films prepared by molecular beam epitaxy on the photodegradation of rhodamine B (RhB). A clear effect is observed, with (111) being the most reactive surface, followed by (110) and (001). Photoreactivity is directly correlated with the surface free energy determined by density functional theory calculations. The RhB photodegradation mechanism is found to involve hydroxyl radicals in solution formed from photo-generated holes and differs from previous studies performed on nanoparticles and composites.

  19. Magnetically engineered smart thin films: toward lab-on-chip ultra-sensitive molecular imaging.

    PubMed

    Hassan, Muhammad A; Saqib, Mudassara; Shaikh, Haseeb; Ahmad, Nasir M; Elaissari, Abdelhamid

    2013-03-01

    Magnetically responsive engineered smart thin films of nanoferrites as contrast agent are employed to develop surface based magnetic resonance imaging to acquire simple yet fast molecular imaging. The work presented here can be of significant potential for future lab-on-chip point-of-care diagnostics from the whole blood pool on almost any substrates to reduce or even prevent clinical studies involve a living organism to enhance the non-invasive imaging to advance the '3Rs' of work in animals-replacement, refinement and reduction.

  20. Porphyrin Molecular Multilayer Thin-Films on Gold (111) Electrodes for Electro-optical Applications

    NASA Astrophysics Data System (ADS)

    Krawicz, Alexandra; Qian, Guoguang; Lewis, Kim; Dinolfo, Peter

    2012-02-01

    We have developed a Layer-by-Layer (LbL) method for the fabrication of thin-film molecular multilayers on gold (111) electrodes. Copper(I) catalyzed azide-alkyne cycloaddition (CuAAC) coupling reactions were used for surface attachment and subsequent LbL deposition of porphyrin building blocks. The electrochemical and photophysical properties of the thin-films can be tuned through synthetic modification of the individual components, resulting in new porphyrin multilayers for applications in light harvesting and molecular electronics. Herein, we demonstrate the reproducible growth trends and optical properties of these films. Multilayer growth was followed by UV-Vis absorption and reflectance spectroscopy. Film thickness (FT) and optical constants were obtained from spectroscopic ellipsometry. Topology and surface roughness was examined by TM-AFM, while the copper content was quantified by XPS. The redox characteristics were studied by electrochemical methods, whereas the conductance of individual porphyrin constructs was examined by STM using the molecular break junction method. The multilayers show consistent linear growth in absorbance and FT over tens of layers and continuity in their molecular structure.

  1. Apparatus and method for treating a cathode material provided on a thin-film substrate

    DOEpatents

    Hanson, Eric J.; Kooyer, Richard L.

    2003-01-01

    An apparatus and method for treating a cathode material provided on a surface of a continuous thin-film substrate and a treated thin-film cathode having increased smoothness are disclosed. A web of untreated cathode material is moved between a feed mechanism and a take-up mechanism, and passed through a treatment station. The web of cathode material typically includes areas having surface defects, such as prominences extending from the surface of the cathode material. The surface of the cathode material is treated with an abrasive material to reduce the height of the prominences so as to increase an 85 degree gloss value of the cathode material surface by at least approximately 10. The web of cathode material may be subjected to a subsequent abrasive treatment at the same or other treatment station. Burnishing or lapping film is employed at a treatment station to process the cathode material. An abrasive roller may alternatively be used to process the web of cathode material. The apparatus and method of the present invention may also be employed to treat the surface of a lithium anode foil so as to cleanse and reduce the roughness of the anode foil surface.

  2. Apparatus and method for treating a cathode material provided on a thin-film substrate

    DOEpatents

    Hanson, Eric J.; Kooyer, Richard L.

    2001-01-01

    An apparatus and method for treating a cathode material provided on a surface of a continuous thin-film substrate and a treated thin-film cathode having increased smoothness are disclosed. A web of untreated cathode material is moved between a feed mechanism and a take-up mechanism, and passed through a treatment station. The web of cathode material typically includes areas having surface defects, such as prominences extending from the surface of the cathode material. The surface of the cathode material is treated with an abrasive material to reduce the height of the prominences so as to increase an 85 degree gloss value of the cathode material surface by at least approximately 10. The web of cathode material may be subjected to a subsequent abrasive treatment at the same or other treatment station. Burnishing or lapping film is employed at a treatment station to process the cathode material. An abrasive roller may alternatively be used to process the web of cathode material. The apparatus and method of the present invention may also be employed to treat the surface of a lithium anode foil so as to cleanse and reduce the roughness of the anode foil surface.

  3. Long-term stability of cellulose acetate butyrate thin films for nuclear certified reference materials.

    PubMed

    Buják, Renáta; Delva, Laurens; Erkoç, Mustafa; Bauwens, Jeroen; Jakopič, Rožle; Vincze, Laszlo; Aregbe, Yetunde; Cardon, Ludwig

    2017-01-01

    Characterization of cellulose acetate butyrate (CAB) thin films with 17, 35 and 52 wt% butyryl is carried out to select the most suitable matrix material for the U and Pu containing large-sized dried spike reference material. The virgin CAB samples were aged by vibrations, heat, humidity, UV light and X-rays. Characterization was done by thermo-analytical techniques, gel permeation chromatography, mechanical tests and via Rayleigh and Compton scattering. The results show that CAB with lower butyryl content can withstand higher operational temperatures and has greater mechanical strength while CAB with higher butyryl content seems to be more resistant to radiation.

  4. Modeling of laser ablation processes for thin film deposition of materials^

    NASA Astrophysics Data System (ADS)

    Leboeuf, Jean-Noel G.

    1996-05-01

    The laser ablation technique for pulsed laser deposition of thin films has proven extremely successful at growing high-quality films of very complex and novel materials, such as high temperature superconducting compounds and diamond-like carbon. The physics ingredients involved are quite complicated given that they include laser-solid interactions at the target, plasma formation off the target, vapor/plasma plume transport towards the deposition substrate, and plume-solid interactions at the substrate. A global physics and computational approach to the laser ablation process has been taken which relies on thermal models to describe laser-solid interactions; on kinetic models of plasma formation in the ablated plume; on an assorted variety of hydrodynamic, gas dynamic and collisional models of plume transport in near vacuum and in a higher pressure background gas; and on molecular dynamics methods to treat plume-substrate interactions. We have chosen to concentrate mostly on silicon to validate our models against experiments. The application of our physics results does however go beyond silicon, given the universality of many experimental observations, such as plume splitting for instance, for a wide variety of laser-ablated materials, be it carbon, copper, yttrium or YBCO. ^* In collaboration with K. R. Chen, J. M. Donato, D. B. Geohegan, C. L. Liu, A. A. Puretzky and R. F. Wood, Oak Ridge National Laboratory, Oak Ridge, TN 37831-8071 ^ Work supported by Oak Ridge National Laboratory Directed Research and Development (LDRD) Fund under U.S Department of Energy contract No. DE-AC05-96OR22464 with Lockheed Martin Energy Systems, Inc.

  5. Optical thin film devices

    NASA Astrophysics Data System (ADS)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  6. Alternative nano-structured thin-film materials used as durable thermal nanoimprint lithography templates.

    PubMed

    Bossard, M; Boussey, J; Le Drogoff, B; Chaker, M

    2016-02-19

    Nanoimprint templates made of diamond-like carbon (DLC) and amorphous silicon carbide (SiC) thin films and fluorine-doped associated materials, i.e. F-DLC and F-SiC were investigated in the context of thermal nanoimprint lithography (NIL) with respect to their release properties. Their performances in terms of durability and stability were evaluated and compared to those of conventional silicon or silica molds coated with antisticking molecules applied as a self-assembled monolayer. Plasma-enhanced chemical vapor deposition parameters were firstly tuned to optimize mechanical and structural properties of the DLC and SiC thin films. The impact of the amount of fluorine dopant on the deposited thin films properties was then analyzed. A comparative analysis of DLC, F-DLC as well as SiC and F-SiC molds was then carried out over multiple imprints, performed into poly (methyl methacrylate) (PMMA) thermo-plastic resist. The release properties of un-patterned films were evaluated by the measurement of demolding energies and surface energies, associated with a systematic analysis of the mold surface contamination. These analyses showed that the developed materials behave as intrinsically easy-demolding and contamination-free molds over series of up to 40 imprints. To our knowledge, it is the first time that such a large number of imprints has been considered within an exhaustive comparative study of materials for NIL. Finally, the developed materials went through standard e-beam lithography and plasma etching processes to obtain nanoscale-patterned templates. The replicas of those patterned molds, imprinted into PMMA, were shown to be of high fidelity and good stability after several imprints.

  7. Electrically controllable molecular spin crossover switching in Fe(phen)2 (NCS)2 thin film

    NASA Astrophysics Data System (ADS)

    Mondal, Chaitali; Mandal, Swapan K.

    2016-10-01

    Spin crossover molecular complex Fe(phen)2(NCS)2 in thin film form (20-300 nm) is obtained by simple dip-coating technique on glass substrates. The growth of the molecular films is confirmed by optical and X-ray diffraction data. The morphology of the samples shows distributed nanocrystals with an average size ca. 12 nm. We measure the current (I)-voltage (V) characteristics of a device with 300 nm film thickness and show that application of electric field can induce spin state switching. The electric field experienced by individual nanocrystals separated by nanometric gap is supposed to be quite high and is plausibly playing the crucial role in instigating switching in molecular nanocrystals. The result is quite significant towards developing room temperature molecular spin cross-over switching devices in the nanoscale limit.

  8. Growth of SrVO{sub 3} thin films by hybrid molecular beam epitaxy

    SciTech Connect

    Eaton, Craig; Brahlek, Matthew; Engel-Herbert, Roman; Moyer, Jarrett A.; Alipour, Hamideh M.; Grimley, Everett D.; LeBeau, James M.

    2015-11-15

    The authors report the growth of stoichiometric SrVO{sub 3} thin films on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO{sub 3} films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes in the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO{sub 3} thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique.

  9. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  10. Velocity measurements of inert porous materials driven by infrared-laser-ablated thin-film titanium

    SciTech Connect

    Bedeaux, Brett C.; Trott, Wayne M.; Castaneda, Jaime N.

    2010-02-15

    This article presents and interprets a series of experiments performed to measure the velocity of four inert low-density porous materials that were accelerated by an ablated thin-film titanium metal, created by vaporizing a 250-nm-thick layer of titanium with a high-energy, Q-switched, pulsed, and 1.054 {mu}m neodymium-glass laser. Inert powder materials were chosen to match, among other characteristics, the morphology of energetic materials under consideration for use in detonator applications. The observed behavior occurs near the thin-film titanium ablation layer, through complex physical mechanisms, including laser absorption in the metal layer, ablation and formation of confined plasma that is a blackbody absorber of the remaining photon energy, and vaporization of the remaining titanium metal. One-dimensional hydrodynamic modeling provided a basis of comparison with the measured velocities. We found, as predicted in wave-propagation-code modeling, that an Asay foil can indicate total momentum of the driven material that is mechanically softer (lower in shock impedance) than the foil. The key conclusion is that the specific impulse delivered by the laser transfers a corresponding momentum to soft, organic power columns that are readily compacted. Impulse from the laser is less efficient in transferring momentum to hard inorganic particles that are less readily compacted.

  11. Biomimetic thin film synthesis

    SciTech Connect

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  12. Temperature stabilized effusion cell evaporation source for thin film deposition and molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tiedje, H. F.; Brodie, D. E.

    2000-05-01

    A simple effusion cell evaporation source for thin film deposition and molecular-beam epitaxy is described. The source consists of a crucible with a thermocouple temperature sensor heated by a resistive crucible heater. Radiation heat transfer from the crucible to the thermocouple produces a consistent and reproducible thermocouple temperature for a given crucible temperature, without direct contact between the thermocouple and the crucible. The thermocouple temperature is somewhat less than the actual crucible temperature because of heat flow from the thermocouple junction along the thermocouple lead wires. In a typical case, the thermocouple temperature is 1007 °C while the crucible is at 1083 °C. The crucible temperature stability is estimated from the measured sensitivity of the evaporation rate of indium to temperature, and the observed variations in the evaporation rate for a fixed thermocouple temperature. The crucible temperature peak-to-peak variation over a one hour period is 1.2 °C. Machined molybdenum crucibles were used in the indium and copper sources for depositing CuInSe2 thin films for solar cells.

  13. Surface molecular aggregation structure and surface physicochemical properties of poly(fluoroalkyl acrylate) thin films

    NASA Astrophysics Data System (ADS)

    Honda, K.; Yamaguchi, H.; Kobayashi, M.; Morita, M.; Takahara, A.

    2008-03-01

    Effect of side chain length on the molecular aggregation states and surface properties of poly(fluoroalkyl acrylate)s [PFA-Cy, where y is fluoromethylene number in Rf group] thin films were systematically investigated. Spin-coated PFA-Cy thin films were characterized by static and dynamic contact angle measurements, X-ray photoelectron spectroscopy (XPS), and grazing- incidence X-ray diffraction (GIXD). The receding contact angles showed small values for PFA-Cy with short side chain (y<=6) and increased above y>=8. GIXD revealed that fluoroalkyl side chain of PFA-Cy with y>=8 was crystallized and formed ordered structures at the surface region as well as bulk one. These results suggest that water repellent mechanism of PFA-Cy can be attributed to the presence of highly ordered fluoroalkyl side chains at the outermost surfaces. The results of XPS in the dry and hydrated states and contact angle measurement in water support the mechanism of lowering contact angle for water by exposure of carbonyl group to the water interface through reorientation of short fluoroalkyl chains. The surface nanotextured PFA-C8 through imprinting of anodic aluminum oxide mold showed extremely high hydrophobicity as well as high oleophobicity.

  14. Thin film growth of CaFe2As2 by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

    2016-01-01

    Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

  15. Multifunctional thin film surface

    DOEpatents

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  16. Fine-Tunable Absorption of Uniformly Aligned Polyurea Thin Films for Optical Filters Using Sequentially Self-Limited Molecular Layer Deposition.

    PubMed

    Park, Yi-Seul; Choi, Sung-Eun; Kim, Hyein; Lee, Jin Seok

    2016-05-11

    Development of methods enabling the preparation of uniformly aligned polymer thin films at the molecular level is a prerequisite for realizing their optoelectronic characteristics as innovative materials; however, these methods often involve a compromise between scalability and accuracy. In this study, we have grown uniformly aligned polyurea thin films on a SiO2 substrate using molecular layer deposition (MLD) based on sequential and self-limiting surface reactions. By integrating plane-polarized Fourier-transform infrared, Raman spectroscopic tools, and density functional theory calculations, we demonstrated the uniform alignment of polyurea MLD films. Furthermore, the selective-wavelength absorption characteristics of thickness-controlled MLD films were investigated by integrating optical measurements and finite-difference time-domain simulations of reflection spectra, resulting from their thickness-dependent fine resonance with photons, which could be used as color filters in optoelectronics.

  17. Molecular doping for control of gate bias stress in organic thin film transistors

    NASA Astrophysics Data System (ADS)

    Hein, Moritz P.; Zakhidov, Alexander A.; Lüssem, Björn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K.; Leo, Karl

    2014-01-01

    The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

  18. An investigation of material properties and tribological performance of magnetron sputtered thin film coatings

    NASA Astrophysics Data System (ADS)

    Singh, Harpal

    This dissertation is divided into two categories based upon lubrication functionality and its application. The categories are: Dry film lubrication and Fluid film lubrication with thin film coatings. Thin film coatings examined in this work were deposited using closed field unbalanced magnetron sputtering and RF-DC coupled magnetron sputtering systems. In Dry/Solid film lubrication, the mechanical, structural and tribological properties of two Molybdenum disulphide (MoS2) based coatings are examined and evaluated. Among the two coatings, one coating is doped with Ti (Ti-MoS2) and the other is a combination of metal, lubricant and oxide (Sb2O3/Au - MoS2). These coatings are known to provide low friction in vacuum environments. The goal of this work was to evaluate friction and wear performance of MoS2 doped coatings in unidirectional and reciprocating sliding contact under different environmental conditions. Sliding contact results showed friction and wear dependence on temperature and humidity. The formation and removal of transfer films and the recrystallization and reorientation of basal layers on the steel counterface was observed as the mechanism for low friction. Structural analysis revealed a relationship between the microstructural properties and tribological performance. It was also observed that the addition of dopants (Ti, Au, Sb 2O3) improved the mechanical properties as compared to pure MoS2 coatings. Further, the rolling contact performance of the coatings was measured on a five ball on rod tribometer and a Thrust bearing tribometer under vacuum and air environments. The rolling contact experiments indicated that life of the rolling components depend on the amount of material present between the contacts. Fluid film lubrication with thin film coatings investigates the possibilities to improve the performance and durability of tribological components when oils and thin films are synergistically coupled. In this work, the ability of a Diamond Like Carbon

  19. Initial Study on Thin Film Preparation of Carbon Nanodots Composites as Luminescence Material

    NASA Astrophysics Data System (ADS)

    Iskandar, F.; Aimon, A. H.; Akmaluddin, A. R.; Nuryadin, B. W.; Abdullah, M.

    2016-08-01

    Nowadays, the developments of phosphors materials require elements without noble metals and simple production process. Carbon nanodots (C-dots) are one of phosphor materials with wide range of emission band, and high biocompatibility. In this research thin film carbon nanodots composite have been prepared by spin coating method. Prior deposition, powder carbon nanodots were synthesized from a mixture of commercial urea as the nitrogen sources and citric acid as a carbon source by using hydrothermal and microwave-assisted heating method. The prepared powder was dispersed in transparent epoxy resin and then coated on glass substrate. The photoluminescence result for sample with 0.035 g citric acid exhibited an intense, single, homogeneous and broad spectrum with yellowish emission upon excitation at 365 nm. The Fourier Transform Infrared Spectroscopy (FTIR) result showed the existences of C=C, C-H, C=O, N-H and O-H functional groups which confirmed the quality of the sample. Further, based on UV-Vis measurement, the prepared thin film was highly transparent (transmittance 90%) with estimated film thickness around 764 nm. This result may open an opportunity for optoelectronic devices.

  20. Development of Nb and Alternative Material Thin Films Tailored for SRF Applications

    SciTech Connect

    Valente-Feliciano, A -M; Reece, C E; Spradlin, J K; Xiao, B; Zhao, X; Gu, Diefeng; Baumgart, Helmut; Beringer, Douglas; Lukaszew, Rosa; Seo, Kang

    2011-09-01

    Over the years, Nb/Cu technology, despite its shortcomings due to the commonly used magnetron sputtering, has positioned itself as an alternative route for the future of superconducting structures used in accelerators. Recently, significant progress has been made in the development of energetic vacuum deposition techniques, showing promise for the production of thin films tailored for SRF applications. JLab is pursuing energetic condensation deposition via techniques such as Electron Cyclotron Resonance and High Power Impulse Magnetron Sputtering. As part of this project, the influence of the deposition energy on the material and RF properties of the Nb thin film is investigated with the characterization of their surface, structure, superconducting properties and RF response. It has been shown that the film RRR can be tuned from single digits to values greater than 400. This paper presents results on surface impedance measurements correlated with surface and material characterization for Nb films produced on various substrates, monocrystalline and polycrystalline as well as amorphous. A progress report on work on NbTiN and AlN based multilayer structures will also be presented.

  1. Aluminum thin film enhanced IR nanosecond laser-induced frontside etching of transparent materials

    NASA Astrophysics Data System (ADS)

    Nieto, Daniel; Cambronero, Ferran; Flores-Arias, María Teresa; Farid, Nazar; O'Connor, Gerard M.

    2017-01-01

    Laser processing of glass is of significant commercial interest for microfabrication of precision optical engineering devices. In this work, a laser ablation enhancement mechanism for microstructuring of glass materials is presented. The method consists of depositing a thin film of aluminum on the front surface of the glass material to be etched. The laser beam modifies the glass material by being incident on this front-side. The influence of ablation fluence in the nanosecond regime, in combination with the deposition of the aluminum layer of various thicknesses, is investigated by determining the ablation threshold for different glass materials including soda-lime, borosilicate, fused silica and sapphire. Experiments are performed using single laser pulse per shot in an air environment. The best enhancement in terms of threshold fluence reduction is obtained for a 16 nm thick aluminum layer where a reduction of two orders of magnitude in the ablation threshold fluence is observed for all the glass samples investigated in this work.

  2. Thin film tritium dosimetry

    DOEpatents

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  3. Solar Selective Coatings Prepared From Thin-Film Molecular Mixtures and Evaluated

    NASA Technical Reports Server (NTRS)

    Jaworske, Don A.

    2003-01-01

    Thin films composed of molecular mixtures of metal and dielectric are being considered for use as solar selective coatings for a variety of space power applications. By controlling molecular mixing during ion-beam sputter deposition, researchers can tailor the solar selective coatings to have the combined properties of high solar absorptance and low infrared emittance. On orbit, these combined properties simultaneously maximize the amount of solar energy captured by the coating and minimize the amount of thermal energy radiated. The solar selective coatings are envisioned for use on minisatellites, for applications where solar energy is used to power heat engines or to heat remote regions in the interior of the spacecraft. Such systems may be useful for various missions, particularly those to middle Earth orbit. Sunlight must be concentrated by a factor of 100 or more to achieve the desired heat inlet operating temperature. At lower concentration factors, the temperature of the heat inlet surface of the heat engine is too low for efficient operation, and at high concentration factors, cavity type heat receivers become attractive. The an artist's concept of a heat engine, with the annular heat absorbing surface near the focus of the concentrator coated with a solar selective coating is shown. In this artist's concept, the heat absorbing surface powers a small Stirling convertor. The astronaut's gloved hand is provided for scale. Several thin-film molecular mixtures have been prepared and evaluated to date, including mixtures of aluminum and aluminum oxide, nickel and aluminum oxide, titanium and aluminum oxide, and platinum and aluminum oxide. For example, a 2400- Angstrom thick mixture of titanium and aluminum oxide was found to have a solar absorptance of 0.93 and an infrared emittance of 0.06. On the basis of tests performed under flowing nitrogen at temperatures as high as 680 C, the coating appeared to be durable at elevated temperatures. Additional durability

  4. Holographic image generation with a thin-film resonance caused by chalcogenide phase-change material

    PubMed Central

    Lee, Seung-Yeol; Kim, Yong-Hae; Cho, Seong-M.; Kim, Gi Heon; Kim, Tae-Youb; Ryu, Hojun; Kim, Han Na; Kang, Han Byeol; Hwang, Chi-Young; Hwang, Chi-Sun

    2017-01-01

    The development of digital holography is anticipated for the viewing of 3D images by reconstructing both the amplitude and phase information of the object. Compared to analog holograms written by a laser interference, digital hologram technology has the potential to realize a moving 3D image using a spatial light modulator. However, to ensure a high-resolution 3D image with a large viewing angle, the hologram panel requires a near-wavelength scale pixel pitch with a sufficient large numbers of pixels. In this manuscript, we demonstrate a digital hologram panel based on a chalcogenide phase-change material (PCM) which has a pixel pitch of 1 μm and a panel size of 1.6 × 1.6 cm2. A thin film of PCM encapsulated by dielectric layers can be used for the hologram panel by means of excimer laser lithography. By tuning the thicknesses of upper and lower dielectric layers, a color-selective diffraction panel is demonstrated since a thin film resonance caused by dielectric can affect to the absorption and diffraction spectrum of the proposed hologram panel. We also show reflection color of a small active region (1 μm × 4 μm) made by ultra-thin PCM layer can be electrically changed. PMID:28117346

  5. Holographic image generation with a thin-film resonance caused by chalcogenide phase-change material

    NASA Astrophysics Data System (ADS)

    Lee, Seung-Yeol; Kim, Yong-Hae; Cho, Seong-M.; Kim, Gi Heon; Kim, Tae-Youb; Ryu, Hojun; Kim, Han Na; Kang, Han Byeol; Hwang, Chi-Young; Hwang, Chi-Sun

    2017-01-01

    The development of digital holography is anticipated for the viewing of 3D images by reconstructing both the amplitude and phase information of the object. Compared to analog holograms written by a laser interference, digital hologram technology has the potential to realize a moving 3D image using a spatial light modulator. However, to ensure a high-resolution 3D image with a large viewing angle, the hologram panel requires a near-wavelength scale pixel pitch with a sufficient large numbers of pixels. In this manuscript, we demonstrate a digital hologram panel based on a chalcogenide phase-change material (PCM) which has a pixel pitch of 1 μm and a panel size of 1.6 × 1.6 cm2. A thin film of PCM encapsulated by dielectric layers can be used for the hologram panel by means of excimer laser lithography. By tuning the thicknesses of upper and lower dielectric layers, a color-selective diffraction panel is demonstrated since a thin film resonance caused by dielectric can affect to the absorption and diffraction spectrum of the proposed hologram panel. We also show reflection color of a small active region (1 μm × 4 μm) made by ultra-thin PCM layer can be electrically changed.

  6. Holographic image generation with a thin-film resonance caused by chalcogenide phase-change material.

    PubMed

    Lee, Seung-Yeol; Kim, Yong-Hae; Cho, Seong-M; Kim, Gi Heon; Kim, Tae-Youb; Ryu, Hojun; Kim, Han Na; Kang, Han Byeol; Hwang, Chi-Young; Hwang, Chi-Sun

    2017-01-24

    The development of digital holography is anticipated for the viewing of 3D images by reconstructing both the amplitude and phase information of the object. Compared to analog holograms written by a laser interference, digital hologram technology has the potential to realize a moving 3D image using a spatial light modulator. However, to ensure a high-resolution 3D image with a large viewing angle, the hologram panel requires a near-wavelength scale pixel pitch with a sufficient large numbers of pixels. In this manuscript, we demonstrate a digital hologram panel based on a chalcogenide phase-change material (PCM) which has a pixel pitch of 1 μm and a panel size of 1.6 × 1.6 cm(2). A thin film of PCM encapsulated by dielectric layers can be used for the hologram panel by means of excimer laser lithography. By tuning the thicknesses of upper and lower dielectric layers, a color-selective diffraction panel is demonstrated since a thin film resonance caused by dielectric can affect to the absorption and diffraction spectrum of the proposed hologram panel. We also show reflection color of a small active region (1 μm × 4 μm) made by ultra-thin PCM layer can be electrically changed.

  7. Behavior of optical thin-film materials and coatings under proton and gamma irradiation.

    PubMed

    Di Sarcina, Ilaria; Grilli, Maria Luisa; Menchini, Francesca; Piegari, Angela; Scaglione, Salvatore; Sytchkova, Anna; Zola, Danilo

    2014-02-01

    Optical materials and coatings are exposed to the flux of energetic particles when used in either space applications or nuclear energy plants. The study of their behavior in such an environment is important to avoid failure of the optical components during their operation. The optical performance of several thin-film materials ((HfO2, Ta2O5, Nb2O5, TiO2, SiO2) and coatings, under irradiation with high-dose gamma rays (5.8 MGy) and exposure to low-energy (60 keV) protons, has been investigated. Some variations of optical properties have been detected in silicon oxide after irradiation, while the other materials are stable in such conditions.

  8. Nanostructured thin film-based near-infrared tunable perfect absorber using phase-change material

    NASA Astrophysics Data System (ADS)

    Kocer, Hasan

    2015-01-01

    Nanostructured thin film absorbers embedded with phase-change thermochromic material can provide a large level of absorption tunability in the near-infrared region. Vanadium dioxide was employed as the phase-change material in the designed structures. The optical absorption properties of the designed structures with respect to the geometric and material parameters were systematically investigated using finite-difference time-domain computations. Absorption level of the resonance wavelength in the near-IR region was tuned from the perfect absorption level to a low level (17%) with a high positive dynamic range of near-infrared absorption intensity tunability (83%). Due to the phase transition of vanadium dioxide, the resonance at the near-infrared region is being turned on and turned off actively and reversibly under the thermal bias, thereby rendering these nanostructures suitable for infrared camouflage, emitters, and sensors.

  9. Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy.

    PubMed

    Gu, Yi; Wang, Kai; Zhou, Haifei; Li, Yaoyao; Cao, Chunfang; Zhang, Liyao; Zhang, Yonggang; Gong, Qian; Wang, Shumin

    2014-01-13

    InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi < 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.

  10. Monotonic and cyclic testing of thin film materials for MEMS applications

    NASA Astrophysics Data System (ADS)

    Cornella, Guido

    MicroElectroMechanical Systems (MEMS) are a class of miniaturized devices comprising sensors and actuators. Mechanically loaded components of MEMS structures, such as bridges or springs, are subjected to repeated loading at strains which are sometimes large. The cyclic behavior of these parts may ultimately limit product lifetime. Knowledge of the mechanical properties of thin film materials subjected to such loading is thus crucial for determining materials-related opportunities and limitations in design of current and future devices. We have developed a micromachining process to fabricate free-standing thin film beam specimens for uniaxial stress-strain testing to simulate micromachined RF switch operation. The process is sufficiently versatile that test samples from any patternable thin film can be produced. Microbeams of gage length 500 mum, width 50 mum, and various thicknesses have been fabricated from aluminum and iridium thin films. A micromechanical testing system driven by a piezoelectic actuator has been designed and built for uniaxial, monotonic and cyclic testing of thin film samples. Load resolution for the test equipment was 0.4 mN and displacement accuracy was 8 nm. The data (time, load, displacement) were acquired with LabVIEW software. Aluminum and iridium microbeam samples of thicknesses of 1, 2, 4, and 8 mum and 0.35 mum respectively, have been uniaxially tested under various monotonic and cyclic loading conditions. A TEM sample preparation technique for investigating microstructural changes due to micromechanical. testing has also been developed. After testing, samples were removed from the testing equipment without imposing additional strain. Thus, the dislocation structure established during testing was locked-in and subsequently observed using TEM. Monotonic testing of aluminum samples has shown strain rate dependent moduli. Micromechanical as well as microstructural test data confirms the hypothesis of the existence of a strain rate

  11. Molecular separations using nanostructured porous thin films fabricated by glancing angle deposition

    NASA Astrophysics Data System (ADS)

    Bezuidenhout, Louis Wentzel

    Biomolecular separation techniques are an enabling technology that indirectly in.uence many aspects of our lives. Advances have led to faster analyses, reduced costs, higher specificity, and new analytical techniques, impacting areas such as health care, environmental monitoring, polymer sciences, agriculture, and nutrition. Further development of separations technology is anticipated to follow the path of computing technology such that miniaturization through the development of microfluidics technology, lab-on-a-chip systems, and other integrative, multi-component systems will further extend our analysis capabilities. Creation of new and improvement of existing separation technologies is an integral part of the pathway to miniaturized systems. the work of this thesis investigates molecular separations using porous nanostructured films fabricated by the thin film process glancing angle deposition (GLAD). Structural architecture, pore size and shape, and film density can be finely controlled to produce high-surface area thin films with engineered morphology. The characteristic size scales and structural control of GLAD films are well-suited to biomolecules and separation techniques, motivating investigation into the utility and performance of GLAD films for biomolecular separations. This project consisted of three phases. First, chromatographic separation of dye molecules on silica GLAD films was demonstrated by thin layer chromatography Direct control of film nanostructure altered the separation characteristics; most strikingly, anisotropic structures provided two-dimensional analyte migration. Second, nanostructures made with GLAD were integrated in PDMS microfluidic channels using a sacrificial etching process; DNA molecules (10/48 kbp and 6/10/20 kbp mixtures) were electrophoretically separated on a microfluidic chip using a porous bed of SiO2 vertical posts. Third, mass spectrometry of proteins and drugs in the mass range of 100-1300 m/z was performed using

  12. Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

    SciTech Connect

    Liang Cai; Gooneratne, Chinthaka; Cha, Dongkyu; Chen Long; Kosel, Jurgen; Gianchandani, Yogesh

    2012-12-01

    Metglas{sup TM} 2826MB foils of 25-30 {mu}m thickness with the composition of Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18} have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of {approx}3 {mu}m thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum (Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magnetic properties of FeNi is also observed as the Mo dopant level increases. The coercivity of FeNi films doped with Mo decreases to a value less than one third of the value without dopant. Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropy properties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The film material that is fabricated using an optimized process is magnetically as soft as amorphous Metglas{sup TM} 2826MB with a coercivity of less than 40 Am{sup -1}. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin film materials on their magnetic properties.

  13. Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

    NASA Astrophysics Data System (ADS)

    Liang, Cai; Gooneratne, Chinthaka; Cha, Dongkyu; Chen, Long; Gianchandani, Yogesh; Kosel, Jurgen

    2012-12-01

    MetglasTM 2826MB foils of 25-30 μm thickness with the composition of Fe40Ni38Mo4B18 have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of ˜3 μm thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum (Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magnetic properties of FeNi is also observed as the Mo dopant level increases. The coercivity of FeNi films doped with Mo decreases to a value less than one third of the value without dopant. Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropy properties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The film material that is fabricated using an optimized process is magnetically as soft as amorphous MetglasTM 2826MB with a coercivity of less than 40 Am-1. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin film materials on their magnetic properties.

  14. Study on Buckling of Stiff Thin Films on Soft Substrates as Functional Materials

    NASA Astrophysics Data System (ADS)

    Ma, Teng

    In engineering, buckling is mechanical instability of walls or columns under compression and usually is a problem that engineers try to prevent. In everyday life buckles (wrinkles) on different substrates are ubiquitous -- from human skin to a rotten apple they are a commonly observed phenomenon. It seems that buckles with macroscopic wavelengths are not technologically useful; over the past decade or so, however, thanks to the widespread availability of soft polymers and silicone materials micro-buckles with wavelengths in submicron to micron scale have received increasing attention because it is useful for generating well-ordered periodic microstructures spontaneously without conventional lithographic techniques. This thesis investigates the buckling behavior of thin stiff films on soft polymeric substrates and explores a variety of applications, ranging from optical gratings, optical masks, energy harvest to energy storage. A laser scanning technique is proposed to detect micro-strain induced by thermomechanical loads and a periodic buckling microstructure is employed as a diffraction grating with broad wavelength tunability, which is spontaneously generated from a metallic thin film on polymer substrates. A mechanical strategy is also presented for quantitatively buckling nanoribbons of piezoelectric material on polymer substrates involving the combined use of lithographically patterning surface adhesion sites and transfer printing technique. The precisely engineered buckling configurations provide a route to energy harvesters with extremely high levels of stretchability. This stiff-thin-film/polymer hybrid structure is further employed into electrochemical field to circumvent the electrochemically-driven stress issue in silicon-anode-based lithium ion batteries. It shows that the initial flat silicon-nanoribbon-anode on a polymer substrate tends to buckle to mitigate the lithiation-induced stress so as to avoid the pulverization of silicon anode. Spontaneously

  15. XPS and UPS Studies of Thin Film PV Materials Modified by Reactions in Liquids

    SciTech Connect

    Perkins, C. L.; Hasoon, F. S.; Al-Thani, H. A.; Asher, S. E.

    2005-01-01

    Water-based processing steps are ubiquitous in the semiconductor industry, and the field of photovoltaics (PV) is no exception. During chemical bath deposition (CBD) of CdS, complex chemical reactions occurring at surfaces and in solution are poorly understood, yet have been shown to have powerful effects on the performance in terms of reliability and efficiency of finished PV devices. In the past, electron spectroscopic studies of these reactions have been hampered by the conflicting requirements of ultra-high vacuum and exposure of samples to liquid water. In this paper we present initial results from a new tool at NREL that allows one to conduct atmospheric pressure, liquid phase chemical processes on thin film PV materials and subsequent examination via core and valence level electron spectroscopies without exposing samples to air contamination.

  16. Investigations on bactericidal properties of molybdenum-tungsten oxides combinatorial thin film material libraries.

    PubMed

    Mardare, Cezarina Cela; Hassel, Achim Walter

    2014-11-10

    A combinatorial thin film material library from the molybdenum-tungsten refractory metals oxides system was prepared by thermal coevaporation, and its structural and morphological properties were investigated after a multiple step heat treatment. A mixture of crystalline and amorphous oxides and suboxides was obtained, as well as surface structuring caused by the enrichment of molybdenum oxides in large grains. It was found that the oxide phases and the surface morphology change as a function of the compositional gradient. Tests of the library antimicrobial activity against E. coli were performed and the antimicrobial activity was proven in some defined compositional ranges. A mechanism for explaining the observed activity is proposed, involving a collective contribution from (i) increased local acidity due to the enrichment in large grains of molybdenum oxides with different stoichiometry and (ii) the release of free radicals from the W18O49 phase under visible light.

  17. High-throughput characterization of stresses in thin film materials libraries using Si cantilever array wafers and digital holographic microscopy

    NASA Astrophysics Data System (ADS)

    Lai, Y. W.; Hamann, S.; Ehmann, M.; Ludwig, A.

    2011-06-01

    We report the development of an advanced high-throughput stress characterization method for thin film materials libraries sputter-deposited on micro-machined cantilever arrays consisting of around 1500 cantilevers on 4-inch silicon-on-insulator wafers. A low-cost custom-designed digital holographic microscope (DHM) is employed to simultaneously monitor the thin film thickness, the surface topography and the curvature of each of the cantilevers before and after deposition. The variation in stress state across the thin film materials library is then calculated by Stoney's equation based on the obtained radii of curvature of the cantilevers and film thicknesses. DHM with nanometer-scale out-of-plane resolution allows stress measurements in a wide range, at least from several MPa to several GPa. By using an automatic x-y translation stage, the local stresses within a 4-inch materials library are mapped with high accuracy within 10 min. The speed of measurement is greatly improved compared with the prior laser scanning approach that needs more than an hour of measuring time. A high-throughput stress measurement of an as-deposited Fe-Pd-W materials library was evaluated for demonstration. The fast characterization method is expected to accelerate the development of (functional) thin films, e.g., (magnetic) shape memory materials, whose functionality is greatly stress dependent.

  18. High-throughput characterization of stresses in thin film materials libraries using Si cantilever array wafers and digital holographic microscopy.

    PubMed

    Lai, Y W; Hamann, S; Ehmann, M; Ludwig, A

    2011-06-01

    We report the development of an advanced high-throughput stress characterization method for thin film materials libraries sputter-deposited on micro-machined cantilever arrays consisting of around 1500 cantilevers on 4-inch silicon-on-insulator wafers. A low-cost custom-designed digital holographic microscope (DHM) is employed to simultaneously monitor the thin film thickness, the surface topography and the curvature of each of the cantilevers before and after deposition. The variation in stress state across the thin film materials library is then calculated by Stoney's equation based on the obtained radii of curvature of the cantilevers and film thicknesses. DHM with nanometer-scale out-of-plane resolution allows stress measurements in a wide range, at least from several MPa to several GPa. By using an automatic x-y translation stage, the local stresses within a 4-inch materials library are mapped with high accuracy within 10 min. The speed of measurement is greatly improved compared with the prior laser scanning approach that needs more than an hour of measuring time. A high-throughput stress measurement of an as-deposited Fe-Pd-W materials library was evaluated for demonstration. The fast characterization method is expected to accelerate the development of (functional) thin films, e.g., (magnetic) shape memory materials, whose functionality is greatly stress dependent.

  19. Analysis and optimization of thin film photovoltaic materials and device fabrication by real time spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Li, Jian; Stoke, Jason A.; Podraza, Nikolas J.; Sainju, Deepak; Parikh, Anuja; Cao, Xinmin; Khatri, Himal; Barreau, Nicolas; Marsillac, Sylvain; Deng, Xunming; Collins, Robert W.

    2007-09-01

    Methods of spectroscopic ellipsometry (SE) have been applied to investigate the growth and properties of the material components used in the three major thin film photovoltaics technologies: (1) hydrogenated silicon (Si:H); (2) cadmium telluride (CdTe); and (3) copper indium-gallium diselenide (CuIn 1-xGa xSe2 or CIGS). In Si:H technology, real time SE (RTSE) has been applied to establish deposition phase diagrams that describe very high frequency (vhf) plasmaenhanced chemical vapor deposition (PECVD) processes for hydrogenated silicon (Si:H) and silicon-germanium alloy (Si 1-xGe x:H) thin films. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si 1-xGe x:H component solar cells of multijunction devices are obtained when the i-layers are prepared under maximal H II dilution conditions. In CdTe technology, the magnetron sputter deposition of polycrystalline CdTe, CdS, and CdTe 1-xS x thin films as well as the formation of CdS/CdTe and CdTe/CdS heterojunctions has been studied. The nucleation and growth behaviors of CdTe and CdS show strong variations with deposition temperature, and this influences the ultimate grain size. The dielectric functions ɛ of the CdTe 1-xS x alloys have been deduced in order to set up a database for real time investigation of inter-diffusion at the CdS/CdTe and CdTe/CdS interfaces. In CIGS technology, strong variations in ɛ of the Mo back contact during sputter deposition have been observed, and these results have been understood applying a Drude relaxation time that varies with the Mo film thickness. Ex-situ SE measurements of a novel In IIS 3 window layer have shown critical point structures at 2.77+/-0.08 eV, 4.92+/-0.005 eV, and 5.64+/-0.005 eV, as well as an absorption tail with an onset near 1.9 eV. Simulations of solar cell performance comparing In IIS 3 and the conventional CdS have revealed similar quantum efficiencies, suggesting the possibility of a Cd-free window layer in CIGS technology.

  20. Thin-film semiconductor perspective of organometal trihalide perovskite materials for high-efficiency solar cells

    DOE PAGES

    Xiao, Zhengguo; Yuan, Yongbo; Wang, Qi; ...

    2016-02-19

    Organolead trihalide perovskites (OTPs) are arising as a new generation of low-cost active materials for solar cells with efficiency rocketing from 3.5% to over 20% within only five years. From “dye” in dye sensitized solar cells to “hole conductors” and “electron conductors” in mesoscopic heterojunction solar cells, there has been a dramatic conceptual evolution on the function of OTPs in photovoltaic devices. OTPs were originally used as dyes in Gratzel cells, achieving a high efficiency above 15% which, however, did not manifest the excellent charge transport properties of OTPs. An analogy of OTPs to traditional semiconductors was drawn after themore » demonstration of highly efficient planar heterojunction structure OTP devices and the observation of their excellent bipolar transport properties with a large diffusion length exceeding 100 nm in CH3NH3PbI3 (MAPbI3) polycrystalline thin films. Here, this review aims to provide the most recent advances in the understanding of the origin of the high OTP device efficiency. Specifically we will focus on reviewing the progress in understanding 1) the characterization of fantastic optoelectronic property of OTPs, 2) the unusual defect physics that originate the optoelectronic property; 3) morphology control of the perovskite film from fabrication process and film post-treatment, and 4) device interface and charge transport layers that dramatically impact device efficiency in the OTP thin film devices; 5) photocurrent hysteresis; 6) tandem solar cells; 7) stability of the perovskite materials and solar cell devices.« less

  1. Thin-film semiconductor perspective of organometal trihalide perovskite materials for high-efficiency solar cells

    SciTech Connect

    Xiao, Zhengguo; Yuan, Yongbo; Wang, Qi; Shao, Yuchuan; Bai, Yang; Deng, Yehao; Dong, Qingfeng; Hu, Miao; Bi, Cheng; Huang, Jinsong

    2016-02-19

    Organolead trihalide perovskites (OTPs) are arising as a new generation of low-cost active materials for solar cells with efficiency rocketing from 3.5% to over 20% within only five years. From “dye” in dye sensitized solar cells to “hole conductors” and “electron conductors” in mesoscopic heterojunction solar cells, there has been a dramatic conceptual evolution on the function of OTPs in photovoltaic devices. OTPs were originally used as dyes in Gratzel cells, achieving a high efficiency above 15% which, however, did not manifest the excellent charge transport properties of OTPs. An analogy of OTPs to traditional semiconductors was drawn after the demonstration of highly efficient planar heterojunction structure OTP devices and the observation of their excellent bipolar transport properties with a large diffusion length exceeding 100 nm in CH3NH3PbI3 (MAPbI3) polycrystalline thin films. Here, this review aims to provide the most recent advances in the understanding of the origin of the high OTP device efficiency. Specifically we will focus on reviewing the progress in understanding 1) the characterization of fantastic optoelectronic property of OTPs, 2) the unusual defect physics that originate the optoelectronic property; 3) morphology control of the perovskite film from fabrication process and film post-treatment, and 4) device interface and charge transport layers that dramatically impact device efficiency in the OTP thin film devices; 5) photocurrent hysteresis; 6) tandem solar cells; 7) stability of the perovskite materials and solar cell devices.

  2. Lipoate-based imprinted self-assembled molecular thin films for biosensor applications.

    PubMed

    Tappura, Kirsi; Vikholm-Lundin, Inger; Albers, Willem M

    2007-01-15

    Lipoate derivatives were used for the formation of imprinted self-assembled molecular thin films for the recognition of morphine. A large collection of lipoate derivatives was screened by molecular dynamics simulations in various solvents. A set of ligands showing favourable interactions with morphine in aqueous environment was selected for synthesis. Morphine-imprinted layers were then produced on gold substrates in mixed monolayers with morphine added as the template. The binding of ligands and morphine to gold, as well as the association/dissociation of morphine to the formed layers were studied with Surface Plasmon Resonance. Imprinted factors were highly variable and were dependent on ligand/morphine mixing ratio, lipoate derivative and monolayer preparation method. The imprinted factors were as high as 100 and 600 for one of the ligands. The results show that the simulations are able to provide correct information of the relative strengths of the molecular interactions between the ligand and morphine molecules in different solutions. The liquid phase simulations are, however, not able to predict the imprinted factors (i.e. distinguish between specific and non-specific binding), because the specificity is not formed before self-assembly on the surface.

  3. Materials-based control of ultrafast relaxation in ferromagnetic thin films

    NASA Astrophysics Data System (ADS)

    Cheng, Lili

    As data rates in magnetic information storage approach 1GHz and above, strategies to control the magnetization dynamics in films become a more pressing need. Materials-based techniques to control relaxation can offer a straightforward implementation for this purpose. Strategies to both increase and decrease the damping constant in ferromagnetic thin films are described in this thesis. By doping rare earth elements, both damping constant and precessional frequency of Ni81Fe19 (Permalloy) can be widely tuned. Sm, Tb, Dy, and Ho all contribute to damping in Ni81Fe19, among which the contribution of relaxation rate from Ho (1.9GHz/%) is the most, which is four times of that from Tb. The increased damping correlates well to the magnetic states of the rare earths. One element, Eu, does not contribute to damping, but it boosts the precessional frequency over a large range (>500 MHz) in Ni 81Fe19. Fe has the lowest damping constant of all elemental ferromagnets. We demonstrate that by doping V into pure Fe, the damping constant can be further reduced. High quality MgO(100)/Fe1-xV x epitaxial thin films are deposited by UHV deposition, with the 35 GHz FMR linewidth (42 Oe) of MgO(100)/Fe film even smaller than the narrowest linewidth of Fe ever reported. As V is doped in, Gilbert damping G decreases. The minimum G value observed is only 14% of that of undoped Fe film, and is even only 34% of the lowest G value ever reported on metallic ferromagnets. The decrease in the Gilbert damping G is closely related to the reduced magnetic anisotropy in the system. The results of this thesis will help advance the understanding of the damping mechanisms in ferromagnets and provide more freedom in engineering the GHz response of the magnetoelectronic devices.

  4. Photochemical functionalization of gallium nitride thin films with molecular and biomolecular layers.

    PubMed

    Kim, Heesuk; Colavita, Paula E; Metz, Kevin M; Nichols, Beth M; Sun, Bin; Uhlrich, John; Wang, Xiaoyu; Kuech, Thomas F; Hamers, Robert J

    2006-09-12

    We demonstrate that photochemical functionalization can be used to functionalize and photopattern the surface of gallium nitride crystalline thin films with well-defined molecular and biomolecular layers. GaN(0001) surfaces exposed to a hydrogen plasma will react with organic molecules bearing an alkene (C=C) group when illuminated with 254 nm light. Using a bifunctional molecule with an alkene group at one end and a protected amine group at the other, this process can be used to link the alkene group to the surface, leaving the protected amine exposed. Using a simple contact mask, we demonstrate the ability to directly pattern the spatial distribution of these protected amine groups on the surface with a lateral resolution of <12 mum. After deprotection of the amines, single-stranded DNA oligonucleotides were linked to the surface using a bifunctional cross-linker. Measurements using fluorescently labeled complementary and noncomplementary sequences show that the DNA-modified GaN surfaces exhibit excellent selectivity, while repeated cycles of hybridization and denaturation in urea show good stability. These results demonstrate that photochemical functionalization can be used as an attractive starting point for interfacing molecular and biomolecular systems with GaN and other compound semiconductors.

  5. Supramolecular Scaffold for Tailoring the Two-Dimensional Assembly of Functional Molecular Units into Organic Thin Films.

    PubMed

    Leung, Franco King-Chi; Ishiwari, Fumitaka; Kajitani, Takashi; Shoji, Yoshiaki; Hikima, Takaaki; Takata, Masaki; Saeki, Akinori; Seki, Shu; Yamada, Yoichi M A; Fukushima, Takanori

    2016-09-14

    Tailoring structurally anisotropic molecular assemblies while controlling their orientation on solid substrates is an important subject for advanced technologies that use organic thin films. Here we report a supramolecular scaffold based on tripodal triptycene assemblies, which enables functional molecular units to assemble into a highly oriented, multilayered two-dimensional (2D) structure on solid substrates. The triptycene building block carries an ethynyl group and three flexible side chains at the 10- and 1,8,13-positions, respectively. These bridgehead-substituted tripodal triptycenes self-assembled on solid substrates to form a well-defined "2D hexagonal + 1D lamellar" structure, which developed parallel to the surface of the substrates. Remarkably, the assembling properties of the triptycene building blocks, particularly for a derivative with tri(oxyethylene)-containing side chains, were not impaired when the alkyne terminal was functionalized with a large molecular unit such as C60, which is comparable in diameter to the triptycene framework. Consequently, thin films with a multilayered 2D assembly of the C60 unit were obtained. Flash-photolysis time-resolved microwave conductivity (FP-TRMC) measurements revealed that the C60 film exhibits highly anisotropic charge-transport properties. Bridgehead-substituted tripodal triptycenes may provide a versatile supramolecular scaffold for tailoring the 2D assembly of molecular units into a highly oriented thin film, and in turn for exploiting the full potential of anisotropic molecular functions.

  6. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Skarlinski, Michael D.; Quesnel, David J.

    2015-12-01

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu2O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films

  7. Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics.

    PubMed

    Sangwan, Vinod K; Ortiz, Rocio Ponce; Alaboson, Justice M P; Emery, Jonathan D; Bedzyk, Michael J; Lauhon, Lincoln J; Marks, Tobin J; Hersam, Mark C

    2012-08-28

    In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm(2)/(V s)), subthreshold swing (150 mV/decade), and on/off ratio (5 × 10(5)), while also achieving hysteresis-free operation in ambient conditions.

  8. Angle-resolved photoemission spectroscopy of strontium lanthanum copper oxide thin films grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Harter, John Wallace

    Among the multitude of known cuprate material families and associated structures, the archetype is "infinite-layer" ACuO2, where perfectly square and flat CuO2 planes are separated by layers of alkaline earth atoms. The infinite-layer structure is free of magnetic rare earth ions, oxygen chains, orthorhombic distortions, incommensurate superstructures, ordered vacancies, and other complications that abound among the other material families. Furthermore, it is the only cuprate that can be made superconducting by both electron and hole doping, making it a potential platform for decoding the complex many-body interactions responsible for high-temperature superconductivity. Research on the infinite-layer compound has been severely hindered by the inability to synthesize bulk single crystals, but recent progress has led to high-quality superconducting thin film samples. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized Sr1-chiLa chiCuO2 thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of other cuprate parent compounds. As carriers are added to the system, a continuous evolution from Mott insulator to superconducting metal is observed as a coherent low-energy band develops on top of a concomitant remnant lower Hubbard band, gradually filling in the Mott gap. For chi = 0.10, our results reveal a strong coupling between electrons and (pi,pi) anti-ferromagnetism, inducing a Fermi surface reconstruction that pushes the nodal states below the Fermi level and realizing nodeless superconductivity. Electron diffraction measurements indicate the presence of a surface reconstruction that is consistent with the polar nature of Sr1-chiLachiCuO2. Most knowledge about the electron-doped side of the cuprate phase diagram has been deduced by generalizing from a single material family, Re2-chi CechiCuO4, where robust antiferromagnetism has been observed past chi

  9. RESEARCH ON THE ELECTRONIC AND OPTICAL PROPERTIES OF POLYMER AND OTHER ORGANIC MOLECULAR THIN FILMS

    SciTech Connect

    ALEXEI G. VITUKHNOVSKY; IGOR I. SOBELMAN - RUSSIAN ACADEMY OF SCIENCES

    1995-09-06

    Optical properties of highly ordered films of poly(p-phenylene) (PPP) on different substrates, thin films of mixtures of conjugated polymers, of fullerene and its composition with polymers, molecular J-aggregates of cyanine dyes in frozen matrices have been studied within the framework of the Agreement. Procedures of preparation of high-quality vacuum deposited PPP films on different substrates (ITO, Si, GaAs and etc.) were developed. Using time-correlated single photon counting technique and fluorescence spectroscopy the high quality of PPP films has been confirmed. Dependence of structure and optical properties on the conditions of preparation were investigated. The fluorescence lifetime and spectra of highly oriented vacuum deposited PPP films were studied as a function of the degree of polymerization. It was shown for the first time that the maximum fluorescence quantum yield is achieved for the chain length approximately equal to 35 monomer units. The selective excitation of luminescence of thin films of PPP was performed in the temperature range from 5 to 300 K. The total intensity of luminescence monotonically decreases with decreasing temperature. Conditions of preparation of highly cristallyne fullerene C{sub 60} films by the method of vacuum deposition were found. Composites of C{sub 60} with conjugated polymers PPV and polyacetylene (PA) were prepared. The results on fluorescence quenching, IR and resonant Raman spectroscopy are consistent with earlier reported ultrafast photoinduced electron transfer from PPV to C{sub 60} and show that the electron transfer is absent in the case of the PA-C{sub 60} composition. Strong quenching of PPV fluorescence was observed in the PPV-PA blends. The electron transfer from PPV to PA can be considered as one of the possible mechanisms of this quenching. The dynamics of photoexcitations in different types of J-aggregates of the carbocyanine dye was studied at different temperatures in frozen matrices. The optical

  10. Growth, characterization and post-processing of inorganic and hybrid organic-inorganic thin films deposited using atomic and molecular layer deposition techniques

    NASA Astrophysics Data System (ADS)

    Abdulagatov, Aziz Ilmutdinovich

    Atomic layer deposition (ALD) and molecular layer deposition (MLD) are advanced thin film coating techniques developed for deposition of inorganic and hybrid organic-inorganic films respectively. Decreasing device dimensions and increasing aspect ratios in semiconductor processing has motivated developments in ALD. The beginning of this thesis will cover study of new ALD chemistry for high dielectric constant Y 2O3. In addition, the feasibility of conducting low temperature ALD of TiN and TiAlN is explored using highly reactive hydrazine as a new nitrogen source. Developments of these ALD processes are important for the electronics industry. As the search for new materials with more advanced properties continues, attention has shifted toward exploring the synthesis of hierarchically nanostructured thin films. Such complex architectures can provide novel functions important to the development of state of the art devices for the electronics industry, catalysis, energy conversion and memory storage as a few examples. Therefore, the main focus of this thesis is on the growth, characterization, and post-processing of ALD and MLD films for fabrication of novel composite (nanostructured) thin films. Novel composite materials are created by annealing amorphous ALD oxide alloys in air and by heat treatment of hybrid organic-inorganic MLD films in inert atmosphere (pyrolysis). The synthesis of porous TiO2 or Al2O3 supported V2O5 for enhanced surface area catalysis was achieved by the annealing of inorganic TiVxOy and AlV xOy ALD films in air. The interplay between phase separation, surface energy difference, crystallization, and melting temperature of individual oxides were studied for their control of film morphology. In other work, a class of novel metal oxide-graphitic carbon composite thin films was produced by pyrolysis of MLD hybrid organic-inorganic films. For example, annealing in argon of titania based hybrid films enabled fabrication of thin films of intimately

  11. Research on the electronic and optical properties of polymer and other organic molecular thin films

    SciTech Connect

    1997-02-01

    The main goal of the work is to find materials and methods of optimization of organic layered electroluminescent cells and to study such properties of polymers and other organic materials that can be used in various opto-electronic devices. The summary of results obtained during the first year of work is presented. They are: (1) the possibility to produce electroluminescent cells using a vacuum deposition photoresist technology for commercial photoresists has been demonstrated; (2) the idea to replace the polyaryl polymers by other polymers with weaker hole conductivity for optimization of electroluminescent cells with ITO-Al electrodes has been suggested. The goal is to obtain amorphous processable thin films of radiative recombination layers in electroluminescent devices; (3) procedures of preparation of high-quality vacuum-deposited poly (p-phenylene) (PPP) films on various substrates have been developed; (4) it was found for the first time that the fluorescence intensity of PPP films depends on the degree of polymerization; (5) the role of interfaces between organic compounds, on one side, and metals or semiconductors, on the other side, has been studied and quenching of the fluorescence caused by semiconductor layer in thin sandwiches has been observed; (6) studies of the dynamics of photoexcitations revealed the exciton self-trapping in quasi-one-dimensional aggregates; and (7) conditions for preparation of highly crystalline fullerene C{sub 60} films by vacuum deposition have been found. Composites of C{sub 60} with conjugated polymers have been prepared.

  12. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dangwal Pandey, A.; Krausert, K.; Franz, D.; Grânäs, E.; Shayduk, R.; Müller, P.; Keller, T. F.; Noei, H.; Vonk, V.; Stierle, A.

    2016-08-01

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

  13. Molecular dynamics study of deformation and fracture in a tantalum nano-crystalline thin film

    NASA Astrophysics Data System (ADS)

    Smith, Laura; Zimmerman, Jonathan A.; Hale, Lucas M.; Farkas, Diana

    2014-06-01

    We present results from molecular dynamics simulations of two nano-crystalline tantalum thin films that illuminate the variety of atomic-scale mechanisms of incipient plasticity. Sample 1 contains approximately 500 K atoms and 3 grains, chosen to facilitate study at 105 s-1 strain rate; sample 2 has 4.6 M atoms and 30 grains. The samples are loaded in uniaxial tension at deformation rates of 105-109 s-1, and display phenomena including emission of perfect 1/2<1 1 1>-type dislocations and the formation and migration of twin boundaries. It was found that screw dislocation emission is the first deformation mechanism activated at strain rates below 108 s-1. Deformation twins emerge as a deformation mechanism at higher strains, with twins observed to cross grain boundaries as larger strains are reached. At high strain rates atoms are displaced with the characteristic twin vector at a ratio of 3 : 1 (108 s-1) or 4 : 1 (109 s-1) to characteristic dislocation vectors. Fracture is nucleated through a nano-void growth process. Grain boundary sliding does not scale with increasing strain rate. Detailed analysis of nano-scale deformation using these tools enhances our understanding of deformation mechanisms in tantalum.

  14. High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

    SciTech Connect

    Ye Yan; Lim, Rodney; White, John M.

    2009-10-01

    Zinc oxynitride semiconductor material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride (Zn{sub 3}N{sub 2}) is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, 47 cm{sup 2} V{sup -1} s{sup -1} for the as-deposited film produced at 50 deg. C and 110 cm{sup 2} V{sup -1} s{sup -1} after annealing at 400 deg. C. In addition, it has been observed that the Hall mobility of the material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide semiconductor, indium-gallium-zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film transistor performance of the material have also been tested, and results are presented herein.

  15. Magnetochromatic thin-film microplates.

    PubMed

    He, Le; Janner, Michael; Lu, Qipeng; Wang, Mingsheng; Ma, Hua; Yin, Yadong

    2015-01-07

    A new type of magnetochromatic material is developed based on thin-film interference of microplates self-assembled from super-paramagnetic nanocrystals. Dynamic optical tuning can be achieved through orientational manipulation of free-standing super-paramagnetic thin-film microplates using external magnetic fields.

  16. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  17. Polymer dielectric materials for organic thin-film transistors: Interfacial control and development for printable electronics

    NASA Astrophysics Data System (ADS)

    Kim, Choongik

    Organic thin-film transistors (OTFTs) have been extensively studied for organic electronics. In these devices, organic semiconductor-dielectric interface characteristics play a critical role in influencing OTFT operation and performance. This study begins with exploring how the physicochemical characteristics of the polymer gate dielectric affects the thin-film growth mode, microstructure, and OTFT performance parameters of pentacene films deposited on bilayer polymer (top)-SiO2 (bottom) dielectrics. Pentacene growth mode varies considerably with dielectric substrate, and correlations are established between pentacene film deposition temperature, the thin-film to bulk microstructural phase transition, and OTFT device performance. Furthermore, the primary influence of the polymer dielectric layer glass transition temperature on pentacene film microstructure and OTFT response is shown for the first time. Following the first study, the influence of the polymer gate dielectric viscoelastic properties on overlying organic semiconductor film growth, film microstructure, and TFT response are investigated in detail. From the knowledge that nanoscopically-confined thin polymer films exhibit glass transition temperatures that deviate substantially from those of the corresponding bulk materials, pentacene (p-channel) and cyanoperylene (n-channel) films grown on polymer gate dielectrics at temperatures well-below their bulk glass transition temperatures (Tg(b)) have been shown to exhibit morphological/microstructural transitions and dramatic OTFT performance discontinuities at well-defined temperatures (defined as the polymer "surface glass transition temperature," or Tg(s)). These transitions are characteristic of the particular polymer architecture and independent of film thickness or overall film cooperative chain dynamics. Furthermore, by analyzing the pentacene films grown on UV-curable polymer dielectrics with different curing times (hence, different degrees of

  18. Synthesis of ALD zinc oxide and thin film materials optimization for UV photodetector applications

    NASA Astrophysics Data System (ADS)

    Tapily, Kandabara Nouhoum

    Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material. It is thermodynamically stable in the wurtzite structure at ambient temperature conditions. ZnO has very interesting optical and electrical properties and is a suitable candidate for numerous optoelectronic applications such as solar cells, LEDs and UV-photodetectors. ZnO is a naturally n-type semiconductor. Due to the lack of reproducible p-type ZnO, achieving good homojunction ZnO-based photodiodes such as UV-photodetectors remains a challenge. Meanwhile, heterojunction structures of ZnO with p-type substrates such as SiC, GaN, NiO, AlGaN, Si etc. are used; however, those heterojunction diodes suffer from low efficiencies. ZnO is an n-type material with numerous intrinsic defect levels responsible for the electrical and optical behaviors. Presently, there is no clear consensus about the origin of those defects. In this work, ZnO was synthesized by atomic layer deposition (ALD). ALD is a novel deposition technique suitable for nanotechnology engineering that provides unique features such as precise control of ZnO thin film with atomic resolution, high uniformity, good conformity and high aspect ratio. Using this novel deposition technique, the ALD ZnO deposition process was developed and optimized using diethyl zinc as the precursor for zinc and water vapor as the oxygen source. In order to optimize the film quality for use in electronic applications, the physical, mechanical and electrical properties were investigated. The structural and mechanical properties of the ALD ZnO thin films were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic Ellipsometry, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, UV-VIS absorption and nanoindentation. The electrical characterizations were performed using C-V, I-V, DLTS, Hall Effect, and four-point probe. The intrinsic defects responsible

  19. The utilization of thin film transistor liquid crystal display waste glass as a pozzolanic material.

    PubMed

    Lin, K L; Huang, Wu-Jang; Shie, J L; Lee, T C; Wang, K S; Lee, C H

    2009-04-30

    This investigation elucidates the pozzolanic behavior of waste glass blended cement (WGBC) paste used in thin film transistor liquid crystal displays (TFT-LCD). X-ray diffraction (XRD) results demonstrate that the TFT-LCD waste glass was entirely non-crystalline. The leaching concentrations of the clay and TFT-LCD waste glass all met the current regulatory thresholds of the Taiwan EPA. The pozzolanic strength activity indices of TFT-LCD waste glass at 28 days and 56 days were 89% and 92%, respectively. Accordingly, this material can be regarded as a good pozzolanic material. The amount of TFT-LCD waste glass that is mixed into WGBC pastes affects the strength of the pastes. The strength of the paste clearly declined as the amount of TFT-LCD waste glass increased. XRD patterns indicated that the major difference was the presence of hydrates of calcium silicate (CSH, 2 theta=32.1 degrees), aluminate and aluminosilicate, which was present in WGBC pastes. Portland cement may have increased the alkalinity of the solution and induced the decomposition of the glass phase network. WGBC pastes that contained 40% TFT-LCD waste glass have markedly lower gel/space ratios and exhibit less degree of hydration than ordinary Portland cement (OPC) pastes. The most satisfactory characteristics of the strength were observed when the mixing ratio of the TFT-LCD waste glass was 10%.

  20. Transition-metal-nitride-based thin films as novel energy harvesting materials

    PubMed Central

    Kerdsongpanya, Sit; Alling, Björn

    2016-01-01

    The last few years have seen a rise in the interest in early transition-metal and rare-earth nitrides, primarily based on ScN and CrN, for energy harvesting by thermoelectricity and piezoelectricity. This is because of a number of important advances, among those the discoveries of exceptionally high piezoelectric coupling coefficient in (Sc,Al)N alloys and of high thermoelectric power factors of ScN-based and CrN-based thin films. These materials also constitute well-defined model systems for investigating thermodynamics of mixing for alloying and nanostructural design for optimization of phase stability and band structure. These features have implications for and can be used for tailoring of thermoelectric and piezoelectric properties. In this highlight article, we review the ScN- and CrN-based transition-metal nitrides for thermoelectrics, and drawing parallels with piezoelectricity. We further discuss these materials as a models systems for general strategies for tailoring of thermoelectric properties by integrated theoretical–experimental approaches. PMID:27358737

  1. Transition-metal-nitride-based thin films as novel energy harvesting materials.

    PubMed

    Eklund, Per; Kerdsongpanya, Sit; Alling, Björn

    2016-05-14

    The last few years have seen a rise in the interest in early transition-metal and rare-earth nitrides, primarily based on ScN and CrN, for energy harvesting by thermoelectricity and piezoelectricity. This is because of a number of important advances, among those the discoveries of exceptionally high piezoelectric coupling coefficient in (Sc,Al)N alloys and of high thermoelectric power factors of ScN-based and CrN-based thin films. These materials also constitute well-defined model systems for investigating thermodynamics of mixing for alloying and nanostructural design for optimization of phase stability and band structure. These features have implications for and can be used for tailoring of thermoelectric and piezoelectric properties. In this highlight article, we review the ScN- and CrN-based transition-metal nitrides for thermoelectrics, and drawing parallels with piezoelectricity. We further discuss these materials as a models systems for general strategies for tailoring of thermoelectric properties by integrated theoretical-experimental approaches.

  2. Nanostructured multilayered thin film barriers for Mg{sub 2}Si thermoelectric materials

    SciTech Connect

    Battiston, S.; Boldrini, S.; Fiameni, S.; Agresti, F.; Famengo, A.; Fabrizio, M.; Barison, S.

    2012-06-26

    The Mg{sub 2}Si-based alloys are promising candidates for thermoelectric energy conversion in the middle-high temperature range in order to replace lead compounds. The main advantages of silicide-based thermoelectrics are the nontoxicity and the abundance of their constituent elements in the earth crust. The drawback of such kind of materials is their oxygen sensitivity at high temperature that entails their use under vacuum or inert atmosphere. In order to limit the corrosion phenomena, nanostructured multilayered molybdenum silicide-based materials were deposited via RF magnetron sputtering onto stainless steel, alumina and silicon (100) to set up the deposition process and then onto Mg{sub 2}Si pellets. XRD, EDS, FE-SEM and electrical measurements at high temperature were carried out in order to obtain, respectively, the structural, compositional, morphological and electrical characterization of the deposited coatings. At the end, the mechanical behavior of the system thin film/Mg{sub 2}Si-substrate as a function of temperature and the barrier properties for oxygen protection after thermal treatment in air at high temperature were qualitatively evaluated by FE-SEM.

  3. Using volatile additives to alter the morphology and performance of active layers in thin-film molecular photovoltaic devices incorporating bulk heterojunctions.

    PubMed

    Dang, Minh Trung; Wuest, James D

    2013-12-07

    Thin-film photovoltaic devices composed of polymers or small molecules have an exciting future as sources of renewable energy because they can be made in large sizes on flexible surfaces by inexpensive techniques of fabrication. Significant progress in developing new molecular photovoltaic materials and device architectures has been achieved in the last decade. The identity of molecular components in active layers and their individual optoelectronic properties obviously help determine the properties of devices; in addition, however, the behavior of devices depends critically on the nature of the local organization of the components. Recent studies have shown that the morphology of active layers can be tuned by adjusting various parameters, including the solvent used to cast the layer, thermal annealing, and special processing additives. In this review, we summarize the effect of volatile additives on the nanoscale morphology of molecular blends, and we show how these effects can improve the performance of devices. Although we focus on the behavior of mixtures of the type used in current molecular thin-film photovoltaic devices, the subject of our review will interest researchers in all areas of science and technology requiring materials in which separate phases must form intimate long-lived intermixtures with defined structures.

  4. Biomimetic thin film deposition

    NASA Astrophysics Data System (ADS)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  5. The Structure of Ice Nanoclusters and Thin-films of Water Ice: Implications for Icy Grains in Cold Molecular Clouds

    NASA Technical Reports Server (NTRS)

    Delzeit, Lance; Blake, David; Uffindell, Christine; DeVincenzi, Donald L. (Technical Monitor)

    2000-01-01

    The cubic to hexagonal phase transformation in water ice (I(sub c) yields I(sub h)) is used to measure the extent to which surface structure and impurities control bulk properties. In pure crystalline (I(sub c)) water ice nanoclusters and in thin-films of impure water ice, I(sub c) yields I(sub h) occurs at lower temperatures than in thin-films of pure water ice. The disordered surface of the 20 nm diameter nanoclusters promotes transformations or reactions which would otherwise be kinetically hindered. Likewise, impurities such as methanol introduce defects into the ice network, thereby allowing sluggish structural transitions to proceed. Such surface-related phenomena play an important role in promoting chemical reactions on interstellar ice grains within cold molecular clouds, where the first organic compounds are formed.

  6. Extremely high rate deposition of polymer multilayer optical thin film materials

    SciTech Connect

    Affinito, J.D.

    1993-01-01

    This paper highlights a new technique for extremely high rate deposition of optical dielectric films (vacuum deposition of polymer multilayer thin films). This is a way to produce multilayer optical filters comprised of thousands of layers of either linear or nonlinear optical materials. The technique involves the flash evaporation of an acrylic monomer onto a moving substrate; the monomer is then cured. Acrylic polymers deposited to date are very clear for wavelengths between 0.35 and 2.5 [mu]m; they have extinction coefficients of k[approx]10[sup [minus]7]. Application of electric field during cross linking can polarize (''pole'') the film to greatly enhance the nonlinear optical properties. ''Poling'' films with the polymer multilayer technique offers advantages over conventional approaches, in that the polarization should not decay over time. Battelle's Pacific Northwest Laboratory is well suited for bringing linear and nonlinear polymer multilayer optical filter technology to manufacturing production status for batch and wide area web applications. 10 figs.

  7. Extremely high rate deposition of polymer multilayer optical thin film materials

    SciTech Connect

    Affinito, J.D.

    1993-03-01

    This paper highlights a new technique for extremely high rate deposition of optical dielectric films (vacuum deposition of polymer multilayer thin films). This is a way to produce multilayer optical filters comprised of thousands of layers of either linear or nonlinear optical materials. The technique involves the flash evaporation of an acrylic monomer onto a moving substrate; the monomer is then cured. Acrylic polymers deposited to date are very clear for wavelengths between 0.35 and 2.5 {mu}m; they have extinction coefficients of k{approx}10{sup {minus}7}. Application of electric field during cross linking can polarize (``pole``) the film to greatly enhance the nonlinear optical properties. ``Poling`` films with the polymer multilayer technique offers advantages over conventional approaches, in that the polarization should not decay over time. Battelle`s Pacific Northwest Laboratory is well suited for bringing linear and nonlinear polymer multilayer optical filter technology to manufacturing production status for batch and wide area web applications. 10 figs.

  8. Primary research efforts on exploring the commercial possibilities of thin film growth and materials purification in space

    NASA Technical Reports Server (NTRS)

    1989-01-01

    The progress made on research programs in the 1987 to 1988 year is reported. The research is aimed at producing thin film semiconductors and superconductor materials in space. Sophisticated vacuum chambers and equipment were attained for the epitaxial thin film growth of semiconductors, metals and superconductors. In order to grow the best possible epitaxial films at the lowest possible temperatures on earth, materials are being isoelectronically doped during growth. It was found that isoelectrically doped film shows the highest mobility in comparison with films grown at optimal temperatures. Success was also attained in growing epitaxial films of InSb on sapphire which show promise for infrared sensitive devices in the III-V semiconductor system.

  9. Ferromagnetism and Nonmetallic Transport of Thin-Film α-FeSi2 : A Stabilized Metastable Material

    DOE PAGES

    Cao, Guixin; Singh, D. J.; Zhang, X. -G.; ...

    2015-04-07

    Tmore » he epitaxially stabilized metallic α-FeSi2 thin films on Si(001) were grown using pulsed laser deposition. While the bulk material of α-FeSi2 is a high temperature metastable phase and nonmagnetic, the thin film is stabilized at room temperature and shows unusual electronic transport and magnetic properties due to strain modification. he transport renders two different conducting states with a strong crossover at 50 K accompanied by an onset of ferromagnetism as well as a substantial magnetocaloric effect and magnetoresistance. hese experimental results are discussed in terms of the unusual electronic structure of α-FeSi2 obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our findings provide an example of a tailored material with interesting physics properties for practical applications.« less

  10. Specific indolo[3,2,1-jk]carbazole conducting thin-film materials production by selective substitution.

    PubMed

    Henry, John B; Wharton, Stuart I; Wood, Elanor R; McNab, Hamish; Mount, Andrew R

    2011-06-02

    Selectively substituted indolo[3,2,1-jk] carbazole (IC) molecules have been synthesized through flash vacuum pyrolysis (FVP) and then electro-oxidized, resulting in the formation of redox-active and electronically conducting thin films consisting exclusively of three highly luminescent dimer species, the 2,2'-, 2,10'-, and 10,10'-coupled dimers. DFT calculation has enabled both the accurate calculation of monomer oxidation potentials and the prediction of the nature of the resulting dimers through consideration of the coupling of the oxidized monomer radical cations. This demonstrates that substituted ICs represent a class of molecules able to form redox-active and conducting dimer films of controlled composition upon oxidation and that DFT calculations can be used to inform the synthesis of specific IC monomers most likely to both produce electronically conducting thin-film materials and yield specific luminescent dimers with desirable materials properties.

  11. Synthesis and modification of mesoporous silica and the preparation of molecular sieve thin films via pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Coutinho, Decio Heringer

    2001-07-01

    Hexagonal mesoporous DAM-1 (Dallas Amorphous Material-1) was prepared using Vitamin E TPGS as the structure-directing agent. Depending upon the temperature and gel composition, highly ordered and hydrothermally stable DAM-1 with various morphologies could be achieved including spheres, gyroids, discoid, hexagonal plates and rods. This synthesis was modified to prepare hybrid organic-inorganic amine and thiol bifunctionalized DAM-1 by direct co-condensation under acidic conditions. Patterned DAM-1 thin films were prepared on patterned transparencies utilizing pulsed laser deposition (PLD) and line patterning techniques. DAM-1 laser ablation onto the patterned substrate followed by hydrothermal treatment resulted in a densely packed film. Removal of the patterned lines by sonication revealed patterned DAM-1 films. Thin films of zeolite type X were also prepared using the PLD technique. Laser ablation of zeolite X onto TiN-coated silicon wafers followed by a hydrothermal treatment resulted in partially oriented, crystalline membranes. Hydrothermal treatment of PLD films on stainless steel mesh produced a coated wire mesh with a 3-mum thick zeolite X film. A novel strategy for imprinting mesoporous SBA-15 that combines a triblock copolymer template and a chiral ruthenium complex is reported. A chiral PEO helix was formed by the chiral ruthenium complex interaction with the block copolymer during the synthesis of SBA-15. Upon removal of the chiral ruthenium complex, a stereospecfic cavity was created. Preliminary results indicated stereoselective absorption of Delta or Λ-Ru(phen)3 2+ isomer from a racemic mixture could be achieved depending on the chirality of the PEO chain. Practicum Two. The industrial practicum report describes the process development unit (PDU) 3-pentenenitrile (3PN) refining operation. This distillation works was operated to refine crude 3PN product, which contained 3PN, 2-methyl-3-butenenitrile (2M3BN), and other byproducts. This report also

  12. Optical Characterization of Pulse Laser Deposition of Thin Film of Hard Materials Using RHEED and AFM Techniques (DURIP)

    DTIC Science & Technology

    2011-09-26

    Ferrite (BaFeO3) have been fabricated by the pulsed laser deposition technique on a Si substrate. The magnetic parameters were measured using vibrating...presented. 1. INTRODUCTION Barium ferrite powder was selected in this study because of its suitable coercive force (HC) and large remnant...was studied in the case of six fine- powder samples of barium ferrite . Then the selected BaFeO3 materials were used to produce a doped PLD thin film

  13. New Magnetic Materials and Phenomena for Radar and Microwave Signal Processing Devices - Bulk and Thin Film Ferrites and Metallic Films

    DTIC Science & Technology

    2009-02-15

    methods have been used to produce in-plane c-axis (IPCA) oriented barium ferrite (BaM) films on o-plane (1120) sapphire substrates with low microwave ...New magnetic materials and phenomena for radar and microwave signal processing devices - bulk and thin film ferrites and metallic films 6. AUTHOR(S...excitation properties in delay line structures. (173 words) 14. SUBJECT TERMS Microwave ferrites , yttrium iron garnet, hexagonal ferrites

  14. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  15. Pulsed—Laser Deposition Of Oxide Thin Films And Laser—Induced Breakdown Spectroscopy Of Multi—Element Materials

    NASA Astrophysics Data System (ADS)

    Pedarnig, Johannes D.

    2010-10-01

    New results of the Linz group on pulsed—laser deposition (PLD) of oxide thin films and on laser—induced breakdown spectroscopy (LIBS) of multi-element materials are reported. High-Tc superconducting (HTS) films with enhanced critical current density Jc are produced by laser ablation of novel nano-composite ceramic targets. The targets contain insulating nano-particles that are embedded into the YBa2Cu3O7 matrix. Epitaxial double-layers of lithium-doped and aluminum-doped ZnO are deposited on r-cut sapphire substrates. Acoustic over-modes in the GHz range are excited by piezoelectric actuation of layers. Smooth films of rare-earth doped glass are produced by F2—laser ablation. The transport properties of HTS thin films are modified by light—ion irradiation. Thin film nano—patterning is achieved by masked ion beam irradiation. LIBS is employed to analyze trace elements in industrial iron oxide powder and reference polymer materials. Various trace elements of ppm concentration are measured in the UV/VIS and vacuum-UV spectral range. Quantitative LIBS analysis of major components in oxide materials is performed by calibration-free methods.

  16. Effect of Doping on beta-Tricalcium Phosphate Bioresorbable Bulk Material and Thin Film Coatings

    NASA Astrophysics Data System (ADS)

    Abdalla, Suhaila

    Magnesium has emerged as a revolutionary biodegradable metal for use as an orthopedic material, it has several advantages over the current metallic materials in use, including eliminating the effects of stress shielding, improving biocompatibility and inhibiting degradation rates, thus removing the requirement of a second surgery for implant removal. Due to the rapid degradation of magnesium, it is necessary to control the corrosion rates of the materials to match the rates of bone healing. This dissertation reports on the effect of doping on the properties of beta-tricalcium phosphate (beta-TCP). It also reports on its application as a thin film coating on magnesium alloys for implant applications. Adding various dopants to beta-TCP significantly influences critical properties. In this study, discs were fabricated in two compositions: (i) undoped beta-TCP, (ii) beta-TCP doped with 1.0 wt % MgO, 0.5 wt % ZnO, and 1.0 wt % TiO2. Films were fabricated from these compositions using the pulsed laser deposition (PLD) technique. These coatings were then characterized for corrosive, hardness, and cytocompatibility. The XRD patterns of the coating confirm the amorphous nature of the films. The presence of the metal oxides in beta-TCP improved ceramic densification. The application of these doped coatings was also found to increase the hardness by 88 %, the modulus of elasticity by 66 %, and improve corrosion resistance of the magnesium alloy substrate; with a 2.4 % improvement in Ecorr and 95 % decrease in icorr. Cell viability was studied using an osteoblast precursor cell line MC3T3-E1 to assure that the biocompatibility of these ceramics was not altered due to the dopants. Long-term biodegradation studies were conducted by measuring weight change and surface microstructure as a function of time in simulated body fluid. The results suggest that these coatings could be used for bioresorbable implants with improved corrosion resistance and increased hardness.

  17. Self-assembled monolayer initiated electropolymerization: a route to thin-film materials with enhanced photovoltaic performance.

    PubMed

    Hwang, Euiyong; de Silva, K M Nalin; Seevers, Chad B; Li, Jie-Ren; Garno, Jayne C; Nesterov, Evgueni E

    2008-09-02

    Continuing progress in the field of organic polymer photovoltaic (PV) devices requires the development of new materials with better charge-transport efficiency. To improve this parameter, we have investigated surface-attached bilayer polymer PV thin films prepared starting from a covalently attached monolayer of an electroactive initiator using sequential electropolymerization of dithiophene and its derivatives. These systems were found to show significantly increased photocurrent generation quantum yields as compared to systems made through conventional approaches. In addition, the described PV thin films possess remarkable mechanical, air, and photostability. These properties likely arise from the more uniform and better ordered bulk layer morphologies as well as tighter covalently bonded contacts at the interfacial junctions, contributing to improved charge transport. While more studies on the fundamental reasons behind the discovered phenomenon are currently underway, this information can be readily applied to build more efficient organic polymer photovoltaics.

  18. Chemical Fabrication Used to Produce Thin-Film Materials for High Power-to- Weight-Ratio Space Photovoltaic Arrays

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Rybicki, George C.; Raffaelle, Ryne P.; Harris, Jerry D.; Hehemann, David G.; Junek, William; Gorse, Joseph; Thompson, Tracy L.; Hollingsworth, Jennifer A.; Buhro, William E.

    2000-01-01

    The key to achieving high specific power (watts per kilogram) space solar arrays is the development of a high-efficiency, thin-film solar cell that can be fabricated directly on a flexible, lightweight, space-qualified durable substrate such as Kapton (DuPont) or other polyimide or suitable polymer film. Cell efficiencies approaching 20 percent at AM0 (air mass zero) are required. Current thin-film cell fabrication approaches are limited by either (1) the ultimate efficiency that can be achieved with the device material and structure or (2) the requirement for high-temperature deposition processes that are incompatible with all presently known flexible polyimide or other polymer substrate materials. Cell fabrication processes must be developed that will produce high-efficiency cells at temperatures below 400 degrees Celsius, and preferably below 300 degress Celsius to minimize the problems associated with the difference between the coefficients of thermal expansion of the substrate and thin-film solar cell and/or the decomposition of the substrate.

  19. Phases, line tension and pattern formation in molecularly thin films at the air-water interface

    NASA Astrophysics Data System (ADS)

    Mandal, Pritam

    A Langmuir film, which is a molecularly thin insoluble film on a liquid substrate, is one practical realization of a quasi-two dimensional matter. The major advantages of this system for the study of phase separation and phase co-existence are (a) it allows accurate control of the components and molecular area of the film and (b) it can be studied by various methods that require very flat films. Phase separation in molecularly thin films plays an important role in a range of systems from biomembranes to biosensors. For example, phase-separated lipid nano-domains in biomembranes are thought to play crucial roles in membrane function. I use Brewster Angel Microscopy (BAM) coupled with Fluorescence Microscopy (FM) and static Light Scattering Microscopy (LSM) to image phases and patterns within Langmuir films. The three microscopic techniques --- BAM, FM and LSM --- are complimentary to each other, providing distinct sets of information. They allow direct comparison with literature results in lipid systems. I have quantitatively validated the use of detailed hydrodynamic simulations to determine line tension in monolayers. Line tension decreases as temperature rises. This decrease gives us information on the entropy associated with the line, and thus about line structure. I carefully consider the thermodynamics of line energy and entropy to make this connection. In the longer run, LSM will be exploited to give us further information about line structure. I have also extended the technique by testing it on domains within the curved surface of a bilayer vesicle. I also note that in the same way that the presence of surface-active agents, known as surfactants, affects surface energy, the addiction of line active agents alters the inter-phase line energy. Thus my results set to stage to systematically study the influence of line active agents ---'linactants' --- on the inter-phase line energy. Hierarchal self-assembled chiral patterns were observed as a function of

  20. Chemically deposited thin films of sulfides and selenides of antimony and bismuth as solar energy materials

    NASA Astrophysics Data System (ADS)

    Nair, M. T.; Nair, Padmanabhan K.; Garcia, V. M.; Pena, Y.; Arenas, O. L.; Garcia, J. C.; Gomez-Daza, O.

    1997-10-01

    Chemical bath deposition techniques for bismuth sulfide, bismuth selenide, antimony sulfide, and antimony selenide thin films of about 0.20 - 0.25 micrometer thickness are reported. All these materials may be considered as solar absorber films: strong optical absorption edges, with absorption coefficient, (alpha) , greater than 104 cm-1, are located at 1.31 eV for Bi2Se3, 1.33 eV for Bi2S3, 1.8 eV for Sb2S3, and 1.35 eV for Sb2Se3. As deposited, all the films are nearly amorphous. However, well defined crystalline peaks matching bismuthinite (JCPDS 17- 0320), paraguanajuatite (JCPDS 33-0214), and stibnite (JCPDS 6-0474) and antimony selenide (JCPDS 15-0861) for Bi2S3, Bi2Se3, Sb2S3 and Sb2Se3 respectively, are observed when the films are annealed in nitrogen at 300 degrees Celsius. This is accompanied by a substantial modification of the electrical conductivity in the films: from 10-7 (Omega) -1 cm-1 (in as prepared films) to 10 (Omega) -1 cm-1 in the case of bismuth sulfide and selenide films, and enhancement of photosensitivity in the case of antimony sulfide films. The chemical deposition of a CuS/CuxSe film on these Vx- VIy films and subsequent annealing at 300 degrees Celsius for 1 h at 1 torr of nitrogen leads to the formation of p-type films (conductivity of 1 - 100 (Omega) -1 cm-1) of multinary composition. Among these, the formation of Cu3BiS3 (JCPDS 9-0488) and Cu3SbS4 (JCPDS 35- 0581), CuSbS2 (JCPDS 35-0413) have been clearly detected. Solar energy applications of these films are suggested.

  1. Thin film composite electrolyte

    DOEpatents

    Schucker, Robert C.

    2007-08-14

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  2. Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A.; VanKeuls, Fred W.; Subramanyam, Guru; Mueller, Carl H.; Romanofsky, Robert R.; Rosado, Gerardo

    2000-01-01

    The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

  3. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    SciTech Connect

    Skarlinski, Michael D.; Quesnel, David J.

    2015-12-21

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

  4. Fabrication and characterization of thin-film transistor materials and devices

    NASA Astrophysics Data System (ADS)

    Hong, David

    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d 10ns0 (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers via reactive sputtering from a metal target, and the characterization of indium gallium zinc oxide (IGZO)-based TFTs utilizing various insulator materials as the gate dielectric. The first topic involves the deposition of oxide semiconductor layers via reactive sputtering from a metal target. Two oxide semiconductors are utilized for fabricating TFTs via reactive sputtering from a metal target: zinc oxide and zinc tin oxide. With optimized processing parameters, zinc oxide and zinc tin oxide via this deposition method exhibit similar characteristics to TFTs fabricated via sputtering from a ceramic target. Additionally the effects of gate capacitance density and gate dielectric material are explored utilizing TFTs with IGZO as the semiconductor layers. IGZO-based TFTs exhibit ideal behavior with improved TFT performance such as higher current drive at a given overvoltage, a decrease in the subthreshold swing, and a decrease in the magnitude of the turn-on voltage. Additionally it is shown that silicon dioxide is the preferred dielectric material, with silicon nitride a poor choice for oxide-based TFTs. Finally a simple method to characterize the band tail state distribution near the conduction band minimum of a semiconductor by analyzing two-terminal current-voltage characteristics of a TFT with a floating gate is presented. The characteristics trap energy (ET) as a function of post-deposition annealing temperature is shown to correlate very well with IGZO TFT performance, with a lower value of E T, corresponding to a more abrupt distribution of band tail states, correlating with improved TFT mobility

  5. Giant surfactants of poly(ethylene oxide)- b-polystyrene-(molecular nanoparticle): nanoparticle-driven self-assembly with sub-10-nm nanostructures in thin films

    NASA Astrophysics Data System (ADS)

    Hsu, Chih-Hao; Lin, Zhiwei; Dong, Xue-Hui; Hsieh, I.-Fan; Cheng, Stephen Z. D.

    2014-03-01

    Giant surfactants are built upon precisely attaching shape- and volume-persistent molecular nanoparticles (MNP) to polymeric flexible tails. The unique class of self-assembling materials, giant surfactants, has been demonstrated to form self-assembled ordered nanostructures, and their self-assembly behaviors are remarkably sensitive to primary chemical structures. In this work, two sets of giant surfactants with functionalized MNP attached to diblock copolymer tails were studied in thin films. Carboxylic acid-functionalized [60]fullerene (AC60) tethered with PEO- b-PS (PEO-PS-AC60) represents an ABA' (hydrophilic-hydrophobic-hydrophilic) giant surfactant, and fluoro-functionalized polyhedral oligomeric silsesquioxane (FPOSS) tethered with PEO- b-PS (PEO-PS-FPOSS) represents an ABC (hydrophilic-hydrophobic-omniphobic) one. The dissimilar chemical natures of the MNPs result in different arrangement of MNPs in self-assembled structures, the dispersion of AC60 in PEO domain and the single domain of FPOSS. Moreover, the chemically bonded MNPs could induce the originally disordered small molecular PEO- b-PS to form ordered cylindrical and lamellar structure, as evidenced by TEM and GISAXS, leading to sub-10-nm nanostructures of copolymer in the thin film state.

  6. Molecular architecture of thin films fabricated via physical vapor deposition and containing a poly(azo)urethane.

    PubMed

    Aléssio, Priscila; Constantino, Carlos José Leopoldo; Job, Aldo Eloizo; Aroca, Ricardo; González, Eduardo René Pérez

    2010-05-01

    Organic thin films are widely applied as transducers in devices whose performance is determined by the optical and electrical properties of the films. In this context, the molecular architecture of the thin films plays an important role. In this work we report the fabrication and characterization of a poly(azo)urethane synthesized fixing CO2 in bis-epoxide followed by a copolymerization reaction with an azodiamine without using isocyanate. The poly(azo)urethane thin films were fabricated by physical vapor deposition (PVD) technique using vacuum thermal evaporation. The molecular architecture of the PVD films was investigated under control growth at nanometer level of thickness, as well as the surface morphology at micro and nanometer scales and the molecular organization. The thermal stability of the poly(azo)urethane molecules, which is a challenge in itself considering the thermal evaporation process, was followed by thermogravimetric analysis (TG) and also by both Fourier transform infrared absorption (FTIR) and ultraviolet-visible (UV-vis) absorption spectroscopies. The UV-vis absorption spectra showed a linear growth of the absorbance of the PVD films with the mass thickness measured by a quartz crystal balance. A random distribution of the poly(azo)urethane molecules in the PVD films was revealed by FTIR spectra. The film morphology was investigated at microscopic level combining chemical and topographical information through micro-Raman technique. At nanoscopic scale, the morphology was investigated by atomic force microscopy (AFM) for films fabricated using distinct evaporation rates. As a proof of principle (for potential applications), the film luminescence was measured over a wide range of temperature. Interestingly, an unusual increase of fluorescence intensity was observed at +150 degrees C after a monotonic decrease from -150 degrees C.

  7. Improving stability of photoluminescence of ZnSe thin films grown by molecular beam epitaxy by incorporating Cl dopant

    SciTech Connect

    Wang, J. S.; Shen, J. L.; Chen, W. J.; Tsai, Y. H.; Wang, H. H.; Yang, C. S.; Chen, R. H.; Tsai, C. D.

    2011-01-10

    This investigation studies the effect of chlorine (Cl) dopant in ZnSe thin films that were grown by molecular beam epitaxy on their photoluminescence (PL) and the stability thereof. Free excitonic emission was observed at room-temperature in the Cl-doped sample. Photon irradiation with a wavelength of 404 nm and a power density of 9.1 W/cm{sup 2} has a much stronger effect on PL degradation than does thermal heating to a temperature of 150 deg. C. Additionally, this study shows that the generation of nonradiative centers by both photon irradiation and thermal heating can be greatly inhibited by incorporating Cl dopant.

  8. Effect of molecular coverage on the electric conductance of a multi-walled carbon nanotube thin film

    NASA Astrophysics Data System (ADS)

    Kokabu, Takuya; Inoue, Shuhei; Matsumura, Yukihiko

    2016-06-01

    We investigated the influence of water adsorption on a CNT thin film. When we assumed that the magnitude of the change in electrical resistance was correlated with the surface coverage of the adsorbed molecules, this phenomenon could be explained by two-layer adsorption. The first layer was expressed by Langmuir adsorption and that on the second layer was expressed by Fowler-Guggenheim adsorption, which was derived by Bragg-Williams approximation and involved a lateral molecular interaction. The adsorption energy estimated by this assumption was on the same order as derived by DFT calculation.

  9. Synthesis of Hexagonal FeMnP Thin Films from a Single-Source Molecular Precursor.

    PubMed

    Leitner, Andrew P; Schipper, Desmond E; Chen, Jing-Han; Colson, Adam C; Rusakova, Irene; Kumar Rai, Binod; Morosan, Emilia; Whitmire, Kenton Herbert

    2017-03-08

    The first heterobimetallic phosphide thin film containing iron, manganese, and phosphorus derived from the single-source precursor FeMn(CO)8(μ-PH2) has been prepared using a home-built metal-organic chemical vapor deposition apparatus. The thin film contains the same ratio of iron, manganese, and phosphorus as the initial precursor. The film becomes oxidized when deposited on a quartz substrate whereas the film deposited on an alumina substrate provides a more homogeneous product. Powder X-ray diffraction confirms the formation of metastable, hexagonal FeMnP phase that was previously only observed at temperatures above 1200 ºC. Selected area electron diffraction on single crystals isolated from the films were indexed to the hexagonal phase. The effective moment of the films (µeff = 3.68µB) matches the previously reported theoretical value for the metastable hexagonal phase whereas the more stable orthorhombic phase is known to be antiferromagnetic. These results not only demonstrate the successful synthesis of a bimetallic, ternary thin film from a single-source precursor, but also the first low temperature approach to the hexagonal phase of FeMnP.

  10. Thin Films in the Technology of Superhigh Frequencies.

    DTIC Science & Technology

    A comprehensive discussion of the physics, manufacturing processes and applications of thin films in modern communications technology. The following...subjects are discussed in detail: (1) Structure and properties of thin films : vacuum vaporization, cathode sputtering, thin film structure and...physical properties. (2) Thin films as SHF load resistors: peculiarities of SHF resistors, material selection, behavior in an SHF field, cylindrical disc

  11. Materials optimization and ghz spin dynamics of metallic ferromagnetic thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Cheng, Cheng

    Metallic ferromagnetic (FM) thin film heterostructures play an important role in emerging magnetoelectronic devices, which introduce the spin degree of freedom of electrons into conventional charge-based electronic devices. As the majority of magnetoelectronic devices operate in the GHz frequency range, it is critical to understand the high-frequency magnetization dynamics in these structures. In this thesis, we start with the static magnetic properties of FM thin films and their optimization via the field-sputtering process incorporating a specially designed in-situ electromagnet. We focus on the origins of anisotropy and hysteresis/coercivity in soft magnetic thin films, which are most relevant to magentic susceptibility and power dissipation in applications in the sub-GHz frequency regime, such as magnetic-core integrated inductors. Next we explore GHz magnetization dynamics in thin-film heterostructures, both in semi-infinite samples and confined geometries. All investigations are rooted in the Landau-Lifshitz-Gilbert (LLG) equation, the equation of motion for magnetization. The phenomenological Gilbert damping parameter in the LLG equation has been interpreted, since the 1970's, in terms of the electrical resistivity. We present the first interpretation of the size effect in Gilbert damping in single metallic FM films based on this electron theory of damping. The LLG equation is intrinsically nonlinear, which provides possibilities for rf signal processing. We analyze the frequency doubling effect at small-angle magnetization precession from the first-order expansion of the LLG equation, and demonstrate second harmonic generation from Ni81 Fe19 (Permalloy) thin film under ferromagnetic resonance (FMR), three orders of magnitude more efficient than in ferrites traditionally used in rf devices. Though the efficiency is less than in semiconductor devices, we provide field- and frequency-selectivity in the second harmonic generation. To address further the

  12. Aspects of Integrating Functional Electroceramic Material in Multilayer Thin Films for Image Sensing: Modeling and Experiment

    NASA Astrophysics Data System (ADS)

    Matin, M. A.; Oishi, K.; Katsuta, A.; Akai, D.; Sawada, K.; Ishida, M.

    2015-07-01

    Using combined experimental and simulation techniques, this study addresses the critical stress for peeling off crucial layer(s) in multilayered epitaxial functional thin films on n-Si(001) substrate. The thickness of platinum (Pt) and PZT thin films was varied from 22 nm to 142 nm and 90 nm to 450 nm, respectively. Residual stresses were measured by analyzing captured fringes using Newton's rings technique. Advanced finite element computation was next conducted to predict the evolution of residual stresses. Induced stresses in Pt thin film were found to be decreased with decreasing the thickness of film from 72 nm to 40 nm. In contrast, stresses are shown to be decreased with increasing the thickness of PZT film from 240 nm to 450 nm. The design of the pyroelectric multilayered sensors was thus optimized employing finite element (FE) simulation. Computed stresses were found to correlate well with that observed in experiments. FE simulations can thus be used as a tool to a priori predict the evolution of residual stresses, which may allow a fail-safe design before the fabrication of pyroelectric image sensors.

  13. Combination of porous silica monolith and gold thin films for electrode material of supercapacitor

    NASA Astrophysics Data System (ADS)

    Pastre, A.; Cristini-Robbe, O.; Boé, A.; Raulin, K.; Branzea, D.; El Hamzaoui, H.; Kinowski, C.; Rolland, N.; Bernard, R.

    2015-12-01

    An all-solid electrical double layer supercapacitor was prepared, starting from a porous silica matrix coated with a gold thin-film. The metallization of the silica xerogel was performed by an original wet chemical process, based on the controlled growth of gold nanoparticles on two opposite faces of the silica monolith as a seed layer, followed by an electroless deposition of a continuous gold thin film. The thickness of the metallic thin film was assessed to be 700 nm. The silica plays two major roles: (1) it is used as a porous matrix for the gold electrode, creating a large specific surface area, and (2) it acts as a separator (non-metallized part of the silica). The silica monolith was soaked in a polyvinyl alcohol and phosphoric acid mixture which is used as polymer electrolyte. Capacitance effect was demonstrated by cyclic voltammetry experiments. The specific capacitance was found to be equal to 0.95 mF cm- 2 (9.5 F g-1). No major degradation occurs within more than 3000 cycles.

  14. Characteristic length of phonon transport within periodic nanoporous thin films and two-dimensional materials

    NASA Astrophysics Data System (ADS)

    Hao, Qing; Xiao, Yue; Zhao, Hongbo

    2016-08-01

    In the past two decades, phonon transport within nanoporous thin films has attracted enormous attention for their potential applications in thermoelectrics and thermal insulation. Various computational studies have been carried out to explain the thermal conductivity reduction within these thin films. Considering classical phonon size effects, the lattice thermal conductivity can be predicted assuming diffusive pore-edge scattering of phonons and bulk phonon mean free paths. Following this, detailed phonon transport can be simulated for a given porous structure to find the lattice thermal conductivity [Hao et al., J. Appl. Phys. 106, 114321 (2009)]. However, such simulations are intrinsically complicated and cannot be used for the data analysis of general samples. In this work, the characteristic length Λ P o r e of periodic nanoporous thin films is extracted by comparing the predictions of phonon Monte Carlo simulations and the kinetic relationship using bulk phonon mean free paths modified by Λ P o r e . Under strong ballistic phonon transport, Λ P o r e is also extracted by the Monte Carlo ray-tracing method for graphene with periodic nanopores. The presented model can be widely used to analyze the measured thermal conductivities of such nanoporous structures.

  15. Host thin films incorporating nanoparticles

    NASA Astrophysics Data System (ADS)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  16. Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

    SciTech Connect

    Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.; Cusco, R.; Artus, L.; Novikov, S. V.; Foxon, C. T.; Calleja, E.

    2008-08-01

    We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared results with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.

  17. Combining a molecular modelling approach with direct current and high power impulse magnetron sputtering to develop new TiO2 thin films for antifouling applications

    NASA Astrophysics Data System (ADS)

    Guillot, Jérôme; Lecoq, Elodie; Duday, David; Puhakka, Eini; Riihimäki, Markus; Keiski, Riitta; Chemin, Jean-Baptiste; Choquet, Patrick

    2015-04-01

    The accumulation of crystallization deposits at the surface of heat exchangers results in the increase of the heat transfer resistance and a drastic loss of efficiency. Coating surfaces with a thin film can limit the scale-surface adhesion force and thus the fouling process. This study compares the efficiency of TiO2 layers exhibiting various crystalline planes and microstructures to reduce the kinetic of fouling. Molecular modelling with density functional theory is first carried out to determine the energy of CaCO3 deposition on anatase (1 0 1), (0 0 4), and (2 0 0) surfaces as well as on a rutile (1 0 1) one. TiO2 thin films (thickness < 1 μm) are then synthesized by direct current and high power impulse magnetron sputtering (dcMS and HiPIMS respectively) in order to tune their crystallinity and microstructure. Lastly, the induction time to grow CaCO3 crystals at the surface of such materials is determined. Comparing the modelling and fouling results allows to draw general trends on the potential anti-scaling properties of TiO2 crystallized under various forms. Until now, such a comparison combining a theoretical approach with experimental fouling tests has never been reported in the literature.

  18. Advanced thin film thermocouples

    NASA Technical Reports Server (NTRS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-01-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  19. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1990--15 January 1991

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1991-11-01

    Results and conclusion of Phase I of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe{sub 2} and CdTe solar cells. The kinetics of the formation of CuInSe{sub 2} by selenization with hydrogen selenide was investigated and a CuInSe{sub 2}/CdS solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe{sub 2} films and a cell efficiency of 7%. Detailed investigations of the open circuit voltage of CuInSe{sub 2} solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe{sub 2} thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe{sub 2} is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10% can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm{sup 2} are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  20. Electrical and mechanical properties of molecularly functionalized mesoporous silica thin films

    NASA Astrophysics Data System (ADS)

    Singh, Amit Pratap

    Mesoporous silica (MPS) thin films are attractive for achieving low relative dielectric permittivity (low-kappa) interlayer isolation in integrated circuit wiring, but are susceptible to instabilities in electrical behavior due to water uptake and copper diffusion. This work investigates the electrical, chemical, and thermal instabilities, Cu diffusion, and adhesion of these materials for evaluating and enabling their use for applications as interlayer insulators in nanodevice wiring. Upon annealing Al/MPS/Si(001)/Al capacitors between 80 to 200°C, the flat-band voltage first increases, reaches a maximum, and then decreases. Concurrently, the initially observed deep depletion behavior is replaced by strong inversion. Subsequent air-exposure restores the preanneal C-V characteristics. Kinetics analyses reveal two thermally activated processes: proton generation through fissure of silanol bonds (activation energy Ea1 = 0.42 +/- 0.04 eV) and proton-induced depassivation of dangling bond traps (Ea2 = 0.54 +/- 0.05 eV) at the MPS/Si interface. We present an empirical model correlating these processes with the C-V characteristics. Further, we show that capping MPS films with a trimethyl-terminated organosilane irreversibly suppresses moisture-induced capacitance instabilities, and decreases the relative dielectric permittivity and Cu-induced leakage currents. Analysis of capacitance-voltage and current-voltage characteristics along with infrared spectroscopy shows that the trimethyl organosilanes inhibit hydrogen bonding of water molecules by rendering the dielectric surfaces hydrophobic. Fracture behavior and mechanical properties of pristine (i.e., un-functionalized MPS) and silylated mesoporous silica (SMPS) films were studied by four-point bend tests and nanoindentation measurements. Four-point bend measurements on Si/epoxy/Ti/Cu/MPS/Si stacks show that structures with un-silylated MPS films fracture at ˜3 J/m2, while those with SMPS films show a ˜50% lower

  1. Precision Photothermal Annealing of Nanoporous Gold Thin Films for the Microfabrication of a Single-chip Material Libraries

    SciTech Connect

    Harris, C. D.; Shen, N.; Rubenchik, A.; Demos, S. G.; Matthews, M. J.

    2015-06-30

    Single-chip material libraries of thin films of nanostructured materials are a promising approach for high throughput studies of structure-property relationship in the fields of physics and biology. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a nanostructured material of specific interest in both these fields. One attractive property of np-Au is its self-similar coarsening behavior by thermally induced surface diffusion. However, traditional heat application techniques for the modification of np-Au are bulk processes that cannot be used to generate a library of different pore sizes on a single chip. Laser micromachining offers an attractive solution to this problem by providing a means to apply energy with high spatial and temporal resolution. In the present study we use finite element multiphysics simulations to predict the effects of laser mode (continuous-wave vs. pulsed) and supporting substrate thermal conductivity on the local np-Au film temperatures during photothermal annealing and subsequently investigate the mechanisms by which the np-Au network is coarsening. Our simulations predict that continuous-wave mode laser irradiation on a silicon supporting substrate supports the widest range of morphologies that can be created through the photothermal annealing of thin film np-Au. Using this result we successfully fabricate a single-chip material library consisting of 81 np-Au samples of 9 different morphologies for use in increased throughput material interaction studies.

  2. Toward High Performance Integrated Semiconductor Micro and Nano Lasers Enabled by Transparent Conducting Materials: from Thick Structure to Thin Film

    NASA Astrophysics Data System (ADS)

    Ou, Fang

    Integrated semiconductor lasers working at the wavelength around 1.3 microm and 1.55 microm are of great interest for the research of photonic integrated circuit (PIC) since they are the crucial components for optical communications and many other applications. To satisfy the requirement of the next generation optical communication and computing systems, integrated semiconductor lasers are expected to have high device performance like very low lasing threshold, high output powers, high speed and possibility of being integrated with electronics. This dissertation focuses on the design and realization of InP based high performance electrically pumped integrated semiconductor lasers. In the dissertation, we first design the tall structure based electrically pumped integrated micro-lasers. Those lasers are capable of giving >10 mW output power with a moderate low threshold current density (0.5--5 kA/cm 2). Besides, a new enhanced radiation loss based coupler design is demonstrated to realize single directional output for curvilinear cavities. Second, the thin film structure based integrated semiconductor laser designs are proposed. Both structures use the side conduction geometry to enable the electrical injection into the thin film laser cavity. The performance enhancement of the thin film structure based lasers is analyzed compared to the tall structure. Third, we investigate the TCO materials. CdO deposited by PLD and In 2O3 deposited by IAD are studied from aspects of their physical, optical and electrical properties. Those materials can give a wide range of tunability in their conductivity (1--5000 S/cm) and optical transparency (loss 200--5000 cm-1), which is of great interest in realizing novel nanophotonic devices. In addition, the electrical contact properties of those materials to InP are also studied. Experiment result shows that both CdO and In2O3 can achieve good ohmic contact to n-InP with contact resistance as low as 10-6O·cm 2. At last, we investigate

  3. Role of molecular architecture on the vitrification of polymer thin films.

    PubMed

    Glynos, Emmanouil; Frieberg, Bradley; Oh, Hyunjoon; Liu, Ming; Gidley, David W; Green, Peter F

    2011-03-25

    We show that thin film star-shaped macromolecules exhibit significant differences in their average vitrification behavior, in both magnitude and thickness dependence, from their linear analogs. This behavior is dictated by a combination of their functionality and arm length. Additionally, the glass transition temperature at the free surface of a star-shaped molecule film may be higher than that of the interior, in contrast to their linear analogs where the opposite is true. These findings have implications for other properties, due largely to the origins, entropic, of this behavior.

  4. Thin Film Electrode Materials Li4Ti5O12 and LiCoO2 Prepared by Spray Pyrolysis Method

    NASA Astrophysics Data System (ADS)

    Takahashi, M.; Tani, J.; Kido, H.; Hayashi, A.; Tadanaga, K.; Tatsumisago, M.

    2011-05-01

    The Li4Ti5O12 and the LiCoO2 have been considered as promising candidates of electrode materials for all-solid-state lithium secondary batteries. The spray pyrolysis method is a useful economical technique to prepare various thicknesses of oxide films though have not been intensively studied for fabrication of thin film lithium batteries. Thin films of Li4Ti5O12 and LiCoO2 electrode materials about 100-400 nm were prepared on quartz and gold substrates by the spray pyrolysis method by using Liacac and, TiO(acac)4 or Co(acac)3 with DMF solvent as starting materials. Electric properties as electrode materials for lithium batteries were estimated by using 3 probe liquid cells with liquid electrolyte LiPF6 in EC-DMC and Li metal as reference and counter electrodes. Structure and morphology of the films were investigated by XRD and SEM. Crystalline Li4Ti5O12 and LiCoO2 thin films were found to be prepared over 700 °C of substrate temperature. Cyclic voltammograms of the Li4Ti5O12 electrode thin films showed sharp oxidation and reduction peaks around 1.6 and 1.5 V, respectively. Charge-discharge curves for both Li4Ti5O12 and LiCoO2 electrode thin films showed discharge plateaus around 1.4 and 3.8 V with about 80 mAhg-1 of capacity. These results showed that these electrode thin films prepared by the spray pyrolysis method are electrochemically active and spray pyrolysis method is a promising technique to prepare thin film electrode materials.

  5. Development of High Band Gap Absorber and Buffer Materials for Thin Film Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Dwyer, Dan

    2011-12-01

    CuInGaSe2 (CIGS) device efficiencies are the highest of the thin film absorber materials (vs. CdTe, alpha-Si, CuInSe2). However, the band gap of the highest efficiency CIGS cells deviates from the expected ideal value predicted by models [1]. Widening the band gap to the theoretically ideal value is one way to increase cell efficiencies. Widening the band gap can be accomplished in two ways; by finding a solution to the Ga-related defects which limit the open circuit voltage at high Ga ratios, or by utilizing different elemental combinations to form an alternative high band gap photoactive Cu-chalcopyrite (which includes any combination of the cations Cu, Al, Ga, and In along with the anions S, Se, and Te). This thesis focuses on the second option, substituting aluminum for gallium in the chalcopyrite lattice to form a CuInAlSe2 (CIAS) film using a sputtering and selenization approach. Both sequential and co-sputtering of metal precursors is performed. Indium was found to be very mobile during both sputtering processes, with a tendency to diffuse to the film surface even when deposited as the base layer in a sequential sputtering process. Elemental diffusion was controlled to a degree using thicker Cu top layer in co-sputtering. The greater thermal conductivity of stainless steel foil (16 W/mK) vs. glass (0.9-1.3 W/mK) can also be used to limit indium diffusion, by keeping the substrate cooler during sputtering. In both sputtering methods aluminum is deposited oxygen-free by capping the film with a Cu capping layer in combination with controlling the indium diffusion. Selenization of metal precursor films is completed using two different techniques. The first is a thermal evaporation approach from a heated box source (method 1 -- reactive thermal evaporation (RTE-Se)). The second is batch selenization using a heated tube furnace (method 2 -- batch selenization). Some batch selenized precursors were capped with ˜ 1mum of selenium. In both selenization methods

  6. Temperature effect on elastic modulus of thin films and nanocrystals

    NASA Astrophysics Data System (ADS)

    Liang, Lihong; Li, Meizhi; Qin, Fuqi; Wei, Yueguang

    2013-02-01

    The stability of nanoscale devices is directly related to elasticity and the effect of temperature on the elasticity of thin films and nanocrystals. The elastic instability induced by rising temperature will cause the failure of integrated circuits and other microelectronic devices in service. The temperature effect on the elastic modulus of thin films and nanocrystals is unclear although the temperature dependence of the modulus of bulk materials has been studied for over half a century. In this paper, a theoretical model of the temperature-dependent elastic modulus of thin films and nanocrystals is developed based on the physical definition of the modulus by considering the size effect of the related cohesive energy and the thermal expansion coefficient. Moreover, the temperature effect on the modulus of Cu thin films is simulated by the molecular dynamics method. The results indicate that the elastic modulus decreases with increasing temperature and the rate of the modulus decrease increases with reducing thickness of thin films. The theoretical predictions based on the model are consistent with the results of computational simulations, semi-continuum calculations and the experimental measurements for Cu, Si thin films and Pd nanocrystals.

  7. Potential for spin-based information processing in a thin-film molecular semiconductor

    NASA Astrophysics Data System (ADS)

    Warner, Marc; Din, Salahud; Tupitsyn, Igor; Morley, Gavin; Stoneham, Marshall; Gardener, Jules; Wu, Zhenlin; Fisher, Andrew; Heutz, Sandrine; Kay, Christopher; Aeppli, Gabriel

    2014-03-01

    Organic semiconductors are studied intensively for applications in electronics and optics, and even spin-based information technology, or spintronics. Fundamental quantities in spintronics are the population relaxation time (T1) and the phase memory time (T2) : T1 measures the lifetime of a classical bit, in this case embodied by a spin oriented either parallel or antiparallel to an external magnetic field, and T2 measures the corresponding lifetime of a quantum bit, encoded in the phase of the quantum state. Here we establish that these times are surprisingly long for a common, low-cost and chemically modifiable organic semiconductor, the blue pigment copper phthalocyanine, in easily processed thin-film form of the type used for device fabrication. At 5 K, a temperature reachable using inexpensive closed-cycle refrigerators, T1 and T2 are respectively 59 ms and 2.6 ms, and at 80 K, which is just above the boiling point of liquid nitrogen, they are respectively 10 ms and 1 ms, demonstrating that the performance of thin-film copper phthalocyanine is superior to that of single-molecule magnets over the same temperature range.

  8. Potential for spin-based information processing in a thin-film molecular semiconductor

    NASA Astrophysics Data System (ADS)

    Warner, Marc; Din, Salahud; Tupitsyn, Igor S.; Morley, Gavin W.; Stoneham, A. Marshall; Gardener, Jules A.; Wu, Zhenlin; Fisher, Andrew J.; Heutz, Sandrine; Kay, Christopher W. M.; Aeppli, Gabriel

    2013-11-01

    Organic semiconductors are studied intensively for applications in electronics and optics, and even spin-based information technology, or spintronics. Fundamental quantities in spintronics are the population relaxation time (T1) and the phase memory time (T2): T1 measures the lifetime of a classical bit, in this case embodied by a spin oriented either parallel or antiparallel to an external magnetic field, and T2 measures the corresponding lifetime of a quantum bit, encoded in the phase of the quantum state. Here we establish that these times are surprisingly long for a common, low-cost and chemically modifiable organic semiconductor, the blue pigment copper phthalocyanine, in easily processed thin-film form of the type used for device fabrication. At 5K, a temperature reachable using inexpensive closed-cycle refrigerators, T1 and T2 are respectively 59ms and 2.6μs, and at 80K, which is just above the boiling point of liquid nitrogen, they are respectively 10μs and 1μs, demonstrating that the performance of thin-film copper phthalocyanine is superior to that of single-molecule magnets over the same temperature range. T2 is more than two orders of magnitude greater than the duration of the spin manipulation pulses, which suggests that copper phthalocyanine holds promise for quantum information processing, and the long T1 indicates possibilities for medium-term storage of classical bits in all-organic devices on plastic substrates.

  9. Demonstration of 40 MHz thin-film electro-optic modulator using an organic molecular salt

    NASA Astrophysics Data System (ADS)

    Bhowmik, Achintya; Ahyi, Ayayi; Tan, Shida; Mishra, Alpana; Thakur, Mrinal

    2000-03-01

    Recently we reported the first demonstration of a single-pass thin-film electro-optic modulator based on a DAST single-crystal film.(M. Thakur, J. Xu, A. Bhowmik, and L. Zhou, Appl. Phys. Lett. 74, 635-637 (1999).) In this work, we report a larger modulation depth ( ~80%) and higher speed of operation. Excellent optical quality single-crystal films were prepared by a modified shear method.(M. Thakur and S. Meyler, Macromolecules 18, 2341 (1985); M. Thakur, Y. Shani, G. C. Chi, and K. O'Brien, Synth. Met. 28, D595 (1989).) Thin-film modulator was constructed by depositing electrodes across the polar axis. The beam from a Ti-Sapphire laser, tunable over 720-850 nm, was propagated perpendicular to the film surface. The modulated signal was detected using a fast photodetector, and displayed on a high bandwidth oscilloscope and a spectrum analyzer. The response was independent of the frequency of applied field over the measurement range (2 kHz - 40 MHz). A much higher speed (>100 GHz) of operation should be possible using these films. These modulators involve negligible losses compared to the waveguide structures, and have significant potential for a broad range of applications in high speed optical signal processing.

  10. Plasma-based ion implantation: a valuable technology for the elaboration of innovative materials and nanostructured thin films

    NASA Astrophysics Data System (ADS)

    Vempaire, D.; Pelletier, J.; Lacoste, A.; Béchu, S.; Sirou, J.; Miraglia, S.; Fruchart, D.

    2005-05-01

    Plasma-based ion implantation (PBII), invented in 1987, can now be considered as a mature technology for thin film modification. After a brief recapitulation of the principle and physics of PBII, its advantages and disadvantages, as compared to conventional ion beam implantation, are listed and discussed. The elaboration of thin films and the modification of their functional properties by PBII have already been achieved in many fields, such as microelectronics (plasma doping/PLAD), biomaterials (surgical implants, bio- and blood-compatible materials), plastics (grafting, surface adhesion) and metallurgy (hard coatings, tribology), to name a few. The major advantages of PBII processing lie, on the one hand, in its flexibility in terms of ion implantation energy (from 0 to 100 keV) and operating conditions (plasma density, collisional or non-collisional ion sheath), and, on the other hand, in the easy transferrability of processes from the laboratory to industry. The possibility of modifying the composition and physical nature of the films, or of drastically changing their physical properties over several orders of magnitude makes this technology very attractive for the elaboration of innovative materials, including metastable materials, and the realization of micro- or nanostructures. A review of the state of the art in these domains is presented and illustrated through a few selected examples. The perspectives opened up by PBII processing, as well as its limitations, are discussed.

  11. Thermostat for high temperature and transient characterization of thin film thermoelectric materials.

    PubMed

    Singh, Rajeev; Shakouri, Ali

    2009-02-01

    We have designed and fabricated a vacuum-insulated thermostat capable of measuring the thermoelectric properties of thin films from room temperature to 850 K. High speed Seebeck voltage transients are resolved to 200 ns with 63 dB dynamic range in order to directly measure thermoelectric device figure of merit. In-plane Seebeck coefficient probes measure voltage and temperature difference at identical locations with low parasitic contributions. In-plane electrical conductivity measurement is accomplished at high speed to avoid possible Seebeck voltage effect on van der Pauw measurements.

  12. Amorphous thin film ruthenium oxide as an electrode material for electrochemical capacitors

    SciTech Connect

    Jow, T.R.; Zheng, J.P.

    1995-12-31

    Ruthenium oxide thin films of an amorphous phase were successfully prepared on a titanium (Ti) substrate at temperatures below 160 C. The sol-gel process using metal alkoxide precursor in nonaqueous solvents was used to prepare these films. The preliminary results showed that a specific capacitance of 430 F/g can be achieved for amorphous ruthenium oxide electrode in sulfuric acid. Films prepared by this method are compared with the films prepared by the thermal decomposition of the aqueous ruthenium chloride solution at temperatures above 300 C. The specific capacitance, the crystalline structure, and the surface morphology of these films as a function of the preparation temperature were also discussed.

  13. Fundamental Studies of the Mechanical Behavior of Microelectronics Thin Film Materials

    DTIC Science & Technology

    1993-04-01

    Leibenguth, Appl. Phys. Leu., 52, 1605-1607 (1988). 19. C.G. Tuppen and CJ. Gibbings, to be published. 20. W. Hagen and H. Strunk , AR PL.Yhy.iL, IL 85...Noble, and I. F. Turlo in Thin Films: Stresses and Mechanical Proert-es Ikedited by M. F. Doerner, W. C. Oliver , G. M. Pharr, and F. R. Brotzen ( Mater...Stanford University (1991). 5. H. Alexander and P.Hassen, Solid State Physics, 22. 27 (1968). 6. W. Hagen and H. Strunk , AppL Phys., 12, 85 ( 1978 ). 7. R

  14. Multiscale Modeling at Nanointerfaces: Polymer Thin Film Materials Discovery via Thermomechanically Consistent Coarse Graining

    NASA Astrophysics Data System (ADS)

    Hsu, David D.

    Due to high nanointerfacial area to volume ratio, the properties of "nanoconfined" polymer thin films, blends, and composites become highly altered compared to their bulk homopolymer analogues. Understanding the structure-property mechanisms underlying this effect is an active area of research. However, despite extensive work, a fundamental framework for predicting the local and system-averaged thermomechanical properties as a function of configuration and polymer species has yet to be established. Towards bridging this gap, here, we present a novel, systematic coarse-graining (CG) method which is able to capture quantitatively, the thermomechanical properties of real polymer systems in bulk and in nanoconfined geometries. This method, which we call thermomechanically consistent coarse-graining (TCCG), is a two-bead-per-monomer CG hybrid approach through which bonded interactions are optimized to match the atomistic structure via the Iterative Boltzmann Inversion method (IBI), and nonbonded interactions are tuned to macroscopic targets through parametric studies. We validate the TCCG method by systematically developing coarse-grain models for a group of five specialized methacrylate-based polymers including poly(methyl methacrylate) (PMMA). Good correlation with bulk all-atom (AA) simulations and experiments is found for the temperature-dependent glass transition temperature (Tg) Flory-Fox scaling relationships, self-diffusion coefficients of liquid monomers, and modulus of elasticity. We apply this TCCG method also to bulk polystyrene (PS) using a comparable coarse-grain CG bead mapping strategy. The model demonstrates chain stiffness commensurate with experiments, and we utilize a density-correction term to improve the transferability of the elastic modulus over a 500 K range. Additionally, PS and PMMA models capture the unexplained, characteristically dissimilar scaling of Tg with the thickness of free-standing films as seen in experiments. Using vibrational

  15. High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

    SciTech Connect

    Chiarella, F. Barra, M.; Ciccullo, F.; Cassinese, A.; Toccoli, T.; Aversa, L.; Tatti, R.; Verucchi, R.

    2014-04-07

    In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

  16. Characterization of the non-uniform reaction in chemically-amplified calix[4]resorcinarene molecular resist thin films

    SciTech Connect

    Prabhu, Vivek M.; Kang, Shuhui; Kline, R. Joseph; DeLongchamp, Dean M.; Fischer, Daniel A.; Wu, Wen-li; Satija, Sushil K.; Bonnesen, Peter V; Sha, Jing; Ober, Christoper K.

    2011-01-01

    The ccc stereoisomer-purified tert-butoxycarbonyloxy (t-Boc) protected calix[4]resorcinarene molecular resists blended with photoacid generator exhibit a non-uniform photoacid catalyzed reaction in thin films. The surface displays a reduced reaction extent, compared to the bulk, with average surface-layer thickness (7.0 1.8) nm determined by neutron reflectivity with deuterium-labeled t-Boc groups. Ambient impurities (amines and organic bases) are known to quench surface reactions and contribute, but grazing incidence X-ray diffraction shows an additional effect that the protected molecular resist are preferentially oriented at the surface, while the bulk of the film displayed diffuse scattering representative of amorphous packing. The surface deprotection reaction and presence of photoacid was quantified by near-edge X-ray absorption fine structure measurements.

  17. Magnetic and transport properties of epitaxial thin film MgFe2O4 grown on MgO (100) by molecular beam epitaxy.

    PubMed

    Wu, Han-Chun; Mauit, Ozhet; Coileáin, Cormac Ó; Syrlybekov, Askar; Khalid, Abbas; Mouti, Anas; Abid, Mourad; Zhang, Hong-Zhou; Abid, Mohamed; Shvets, Igor V

    2014-11-12

    Magnesium ferrite is a very important magnetic material due to its interesting magnetic and electrical properties and its chemical and thermal stability. Here we report on the magnetic and transport properties of epitaxial MgFe2O4 thin films grown on MgO (001) by molecular beam epitaxy. The structural properties and chemical composition of the MgFe2O4 films were characterized by X-Ray diffraction and X-Ray photoelectron spectroscopy, respectively. The nonsaturation of the magnetization in high magnetic fields observed for M (H) measurements and the linear negative magnetoresistance (MR) curves indicate the presence of anti-phase boundaries (APBs) in MgFe2O4. The presence of APBs was confirmed by transmission electron microscopy. Moreover, post annealing decreases the resistance and enhances the MR of the film, suggesting migration of the APBs. Our results may be valuable for the application of MgFe2O4 in spintronics.

  18. Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Fleischmann, C.; Lieten, R. R.; Hermann, P.; Hönicke, P.; Beckhoff, B.; Seidel, F.; Richard, O.; Bender, H.; Shimura, Y.; Zaima, S.; Uchida, N.; Temst, K.; Vandervorst, W.; Vantomme, A.

    2016-08-01

    Strained Ge1-xSnx thin films have recently attracted a lot of attention as promising high mobility or light emitting materials for future micro- and optoelectronic devices. While they can be grown nowadays with high crystal quality, the mechanism by which strain energy is relieved upon thermal treatments remains speculative. To this end, we investigated the evolution (and the interplay) of composition, strain, and morphology of strained Ge0.94Sn0.06 films with temperature. We observed a diffusion-driven formation of Sn-enriched islands (and their self-organization) as well as surface depressions (pits), resulting in phase separation and (local) reduction in strain energy, respectively. Remarkably, these compositional and morphological instabilities were found to be the dominating mechanisms to relieve energy, implying that the relaxation via misfit generation and propagation is not intrinsic to compressively strained Ge0.94Sn0.06 films grown by molecular beam epitaxy.

  19. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

    PubMed

    Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

    2010-09-24

    A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

  20. Maximizing the dielectric response of molecular thin films via quantum chemical design.

    PubMed

    Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

    2014-12-23

    Developing high-capacitance organic gate dielectrics is critical for advances in electronic circuitry based on unconventional semiconductors. While high-dielectric constant molecular substances are known, the mechanism of dielectric response and the fundamental chemical design principles are not well understood. Using a plane-wave density functional theory formalism, we show that it is possible to map the atomic-scale dielectric profiles of molecule-based materials while capturing important bulk characteristics. For molecular films, this approach reveals how basic materials properties such as surface coverage density, molecular tilt angle, and π-system planarity can dramatically influence dielectric response. Additionally, relatively modest molecular backbone and substituent variations can be employed to substantially enhance film dielectric response. For dense surface coverages and proper molecular alignment, conjugated hydrocarbon chains can achieve dielectric constants of >8.0, more than 3 times that of analogous saturated chains, ∼2.5. However, this conjugation-related dielectric enhancement depends on proper molecular orientation and planarization, with enhancements up to 60% for proper molecular alignment with the applied field and an additional 30% for conformations such as coplanarity in extended π-systems. Conjugation length is not the only determinant of dielectric response, and appended polarizable high-Z substituents can increase molecular film response more than 2-fold, affording estimated capacitances of >9.0 μF/cm2. However, in large π-systems, polar substituent effects are substantially attenuated.

  1. Growth of Cr2CoGa and inverse Heusler thin films using Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Jamer, Michelle; Decapua, Matthew; Player, Gabriel; Heiman, Don

    Theoretical calculations have predicted the existence of inverse Heusler compounds that exhibit zero-moment magnetization while retaining their half-metallicity. These unique compounds have been labeled spin gapless semiconductors (SGS), where the density of states (DOS) can behave as a half-metal or gapless semiconductor. There is a special interest for zero-moment SGS compounds since traditional antiferromagnets cannot be spin-polarized. Such compounds are experimentally attractive for future spintronic devices due to their large magnetic transition temperature (400-800 K). This work focuses on zero-moment inverse Heusler compounds including Cr2CoGa and Mn3Al. Thin films have been grown using MBE and their magnetic, structural, and electrical properties of these compounds have been characterized by various techniques, including XMCD and magnetometry. The atomic moments are found to be large, but significant cancellations lead to small average moments. Supported by NSF Grant ECCS-1402738.

  2. Atmospheric-Pressure-Spray, Chemical- Vapor-Deposited Thin-Film Materials Being Developed for High Power-to- Weight-Ratio Space Photovoltaic Applications

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Harris, Jerry D.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Smith, Mark A.; Cowen, Jonathan E.

    2001-01-01

    The key to achieving high specific power (watts per kilogram) space photovoltaic arrays is the development of high-efficiency thin-film solar cells that are fabricated on lightweight, space-qualified substrates such as Kapton (DuPont) or another polymer film. Cell efficiencies of 20 percent air mass zero (AM0) are required. One of the major obstacles to developing lightweight, flexible, thin-film solar cells is the unavailability of lightweight substrate or superstrate materials that are compatible with current deposition techniques. There are two solutions for working around this problem: (1) develop new substrate or superstrate materials that are compatible with current deposition techniques, or (2) develop new deposition techniques that are compatible with existing materials. The NASA Glenn Research Center has been focusing on the latter approach and has been developing a deposition technique for depositing thin-film absorbers at temperatures below 400 C.

  3. Molecular orientation in thin films of bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) on graphite studied by angle-resolved photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Hasegawa, Shinji; Tanaka, Shoji; Yamashita, Yoshiro; Inokuchi, Hiroo; Fujimoto, Hitoshi; Kamiya, Koji; Seki, Kazuhiko; Ueno, Nobuo

    1993-07-01

    Angle-resolved ultraviolet photoelectron spectra using synchrotron radiation were measured for oriented thin films of bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) on a cleaved highly oriented pyrolytic graphite (HOPG) surface. The observed takeoff angle dependence of the photoelectron intensity was analyzed by using the independent-atomic-center approximation and modified neglect of diatomic overlap molecular-orbital calculations. The calculated results agree well with the experimental ones. From the comparison between these results, the molecules in the thin film are estimated to lie flat with the inclination angle β<=10° to the HOPG surface. This analysis method is useful as a first step to a quantitative analysis for angular distribution of photoelectrons from thin films of large and complex organic molecules.

  4. Current flow in a 3-terminal thin film contact with dissimilar materials and general geometric aspect ratios

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Hung, Derek M. H.; Lau, Y. Y.

    2013-02-01

    The current flow pattern, together with the contact resistance, is calculated analytically in a Cartesian 3-terminal thin film contact with dissimilar materials. The resistivities and the geometric dimensions in the individual contact members, as well as the terminal voltages, may assume arbitrary values. We show that the current flow patterns and the contact resistance may be conveniently decomposed into the even and odd solution. The even solution gives exclusively and totally the current flowing from the source to the gate. The odd solution gives exclusively and totally the current flowing from the source to the drain. Current crowding at the edges, and current partition in different regions are displayed. The analytic solutions are validated using a simulation code. The bounds on the variation of the contact resistance are given. This paper may be considered as the generalization of the transmission line model and the Kennedy-Murley model that were used extensively in the characterization of thin-film devices. For completeness, we include the general results for the cylindrical geometry, which are qualitatively similar to the even solution of the Cartesian geometry.

  5. On the Sn loss from thin films of the material system Cu-Zn-Sn-S in high vacuum

    NASA Astrophysics Data System (ADS)

    Weber, A.; Mainz, R.; Schock, H. W.

    2010-01-01

    In this paper the Sn loss from thin films of the material system Cu-Zn-Sn-S and the subsystems Cu-Sn-S and Sn-S in high vacuum is investigated. A combination of in situ x-ray diffractometry and x-ray fluorescence (XRF) at a synchrotron light source allowed identifying phases, which tend to decompose and evaporate a Sn-containing compound. On the basis of the XRF results a quantification of the Sn loss from the films during annealing experiments is presented. It can be shown that the evaporation rate from the different phases decreases according to the order SnS→Cu2SnS3→Cu4SnS4→Cu2ZnSnS4. The phase SnS is assigned as the evaporating compound. The influence of an additional inert gas component on the Sn loss and on the formation of Cu2ZnSnS4 thin films is discussed.

  6. One material, multiple functions: graphene/Ni(OH)2 thin films applied in batteries, electrochromism and sensors

    NASA Astrophysics Data System (ADS)

    Neiva, Eduardo G. C.; Oliveira, Marcela M.; Bergamini, Márcio F.; Marcolino, Luiz H.; Zarbin, Aldo J. G.

    2016-09-01

    Different nanocomposites between reduced graphene oxide (rGO) and Ni(OH)2 nanoparticles were synthesized through modifications in the polyol method (starting from graphene oxide (GO) dispersion in ethylene glycol and nickel acetate), processed as thin films through the liquid-liquid interfacial route, homogeneously deposited over transparent electrodes and spectroscopically, microscopically and electrochemically characterized. The thin and transparent nanocomposite films (112 to 513 nm thickness, 62.6 to 19.9% transmittance at 550 nm) consist of α-Ni(OH)2 nanoparticles (mean diameter of 4.9 nm) homogeneously decorating the rGO sheets. As a control sample, neat Ni(OH)2 was prepared in the same way, consisting of porous nanoparticles with diameter ranging from 30 to 80 nm. The nanocomposite thin films present multifunctionality and they were applied as electrodes to alkaline batteries, as electrochromic material and as active component to electrochemical sensor to glycerol. In all the cases the nanocomposite films presented better performances when compared to the neat Ni(OH)2 nanoparticles, showing energy and power of 43.7 W h kg‑1 and 4.8 kW kg‑1 (8.24 A g‑1) respectively, electrochromic efficiency reaching 70 cm2 C‑1 and limit of detection as low as 15.4 ± 1.2 μmol L‑1.

  7. One material, multiple functions: graphene/Ni(OH)2 thin films applied in batteries, electrochromism and sensors

    PubMed Central

    Neiva, Eduardo G. C.; Oliveira, Marcela M.; Bergamini, Márcio F.; Marcolino, Luiz H.; Zarbin, Aldo J. G.

    2016-01-01

    Different nanocomposites between reduced graphene oxide (rGO) and Ni(OH)2 nanoparticles were synthesized through modifications in the polyol method (starting from graphene oxide (GO) dispersion in ethylene glycol and nickel acetate), processed as thin films through the liquid-liquid interfacial route, homogeneously deposited over transparent electrodes and spectroscopically, microscopically and electrochemically characterized. The thin and transparent nanocomposite films (112 to 513 nm thickness, 62.6 to 19.9% transmittance at 550 nm) consist of α-Ni(OH)2 nanoparticles (mean diameter of 4.9 nm) homogeneously decorating the rGO sheets. As a control sample, neat Ni(OH)2 was prepared in the same way, consisting of porous nanoparticles with diameter ranging from 30 to 80 nm. The nanocomposite thin films present multifunctionality and they were applied as electrodes to alkaline batteries, as electrochromic material and as active component to electrochemical sensor to glycerol. In all the cases the nanocomposite films presented better performances when compared to the neat Ni(OH)2 nanoparticles, showing energy and power of 43.7 W h kg−1 and 4.8 kW kg−1 (8.24 A g−1) respectively, electrochromic efficiency reaching 70 cm2 C−1 and limit of detection as low as 15.4 ± 1.2 μmol L−1. PMID:27654065

  8. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS

    SciTech Connect

    Jie Guan; Nguyen Minh

    2003-10-01

    This document summarizes the technical progress from April to September 2003 for the program, Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells, contract number DE-AC26-00NT40711. Characteristics of doped lanthanum gallate (LSGMF) powder suitable for thin electrolyte fabrication have been defined. Bilayers with thin LSGMF electrolyte supported on an anode were fabricated and the fabrication process was improved. Preliminary performance was characterized. High performance cathode material Sr{sub 0.5}Sm{sub 0.5}CoO{sub 3} has been down-selected and is being optimized by modifying materials characteristics and processing parameters. The selected cathode exhibited excellent performance with cathode polarization of {approx}0.23 ohm-cm{sup 2} at 600 C.

  9. High-throughput screening of thin-film semiconductor material libraries II: characterization of Fe-W-O libraries.

    PubMed

    Meyer, Robert; Sliozberg, Kirill; Khare, Chinmay; Schuhmann, Wolfgang; Ludwig, Alfred

    2015-04-13

    Metal oxides are promising materials for solar water splitting. To identify suitable materials within the ternary system FeWO, thin-film material libraries with combined thickness and compositional gradients were synthesized by combinatorial reactive magnetron sputtering. These libraries (>1000 different samples) were investigated by means of structural and functional high-throughput characterization techniques to establish correlations between composition, crystallinity, morphology, thickness, and photocurrent density in the compositional range between (Fe6 W94 )Ox and (Fe61 W39 )Ox . In addition to the well-known phase WO3 , the binary phase W5 O14 and the ternary phase Fe2 O6 W show enhanced photoelectrochemical activity. The highest photocurrent density of 65 μA cm(-2) was achieved for the composition (Fe15 W85 )Ox , which contains the W5 O14 phase and has a thickness of 1060 nm.

  10. Oxygen vacancy induced photoluminescence and ferromagnetism in SrTiO3 thin films by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Xu, Wenfei; Yang, Jing; Bai, Wei; Tang, Kai; Zhang, Yuanyuan; Tang, Xiaodong

    2013-10-01

    SrTiO3 thin films were epitaxially grown on (100) SrTiO3 substrates using molecular beam epitaxy. The temperature for growth of the films was optimized, which was indicated by x-ray diffraction and further confirmed by microstructural characterization. Photoluminescence spectra show that oxygen-vacancy contributes to red and blue luminescence of oxygen-deficient post-annealed films, and a red shift was observed in blue region. On the other hand, ferromagnetism in film form SrTiO3 was observed from 5 K to 400 K and could be further enhanced with decreasing oxygen plasma partial pressure in annealing processes, which might be explained by the theory involving d0 magnetism related to oxygen-vacancy. From the cooperative investigations of optical and magnetic properties, we conclude that intrinsic defects, especially oxygen-vacancy, can induce and enhance luminescence and magnetism in SrTiO3 films.

  11. Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

    SciTech Connect

    Hirama, Kazuyuki Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Krockenberger, Yoshiharu; Yamamoto, Hideki

    2014-03-03

    We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp{sup 3}-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N{sub 2}{sup +} and Ar{sup +} ions is a key to selectively discriminate non-sp{sup 3} BN phases. At low acceleration voltage values, the sp{sup 2}-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.

  12. Polarization dependence of Raman scattering from a thin film involving optical anisotropy theorized for molecular orientation analysis.

    PubMed

    Itoh, Yuki; Hasegawa, Takeshi

    2012-06-14

    Polarized Raman scattering from a thin film involving uniaxial optical anisotropy deposited on a dielectric substrate has analytically been theorized. The analyte film is modeled as a three-phase system (air/film/substrate) to calculate the electromagnetic fields of the incident and scattered light propagating across the system with an aid of the transfer matrix method to exactly take the optical anisotropy of the film into account. On the new theory, a methodology for molecular orientation analysis of an extended polymethylene chain in the film is proposed, which is employed for determination of the tilt angles of the chains in single- and five-monolayer Langmuir-Blodgett (LB) films of cadmium stearate deposited on a glass plate. The results agree well with those obtained by infrared spectroscopy, which confirms reliability of the present method.

  13. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

    PubMed

    Roy, Anupam; Guchhait, Samaresh; Dey, Rik; Pramanik, Tanmoy; Hsieh, Cheng-Chih; Rai, Amritesh; Banerjee, Sanjay K

    2015-04-28

    Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

  14. Scale Dependence of the Mechanical Properties and Microstructure of Crustaceans Thin Films as Biomimetic Materials

    NASA Astrophysics Data System (ADS)

    Verma, Devendra; Qu, Tao; Tomar, Vikas

    2015-04-01

    The exoskeletons of crustacean species in the form of thin films have been investigated by several researchers to better understand the role played by the exoskeletal structure in affecting the functioning of species such as shrimps, crabs, and lobsters. These species exhibit similar designs in their exoskeleton microstructure, such as a Bouligand pattern (twisted plywood structure), layers of different thickness across cross section, change in mineral content through the layers, etc. Different parts of crustaceans exhibit a significant variation in mechanical properties based on the variation in the above-mentioned parameters. This change in mechanical properties has been analyzed by using imaging techniques such as scanning electron microscopy and energy-dispersive x-ray spectroscopy, and by using mechanical characterization techniques such as nanoindentation and atomic force microscopy. In this article, the design principles of these biological composites are discussed based on two shrimp species: Rimicaris exoculata and Pandalus platyceros.

  15. Electrochemical photovoltaic and photoelectrochemical storage cells based on II-VI polycrystalline thin film materials

    SciTech Connect

    Wallace, W.L.

    1983-06-01

    Research on electrochemical photovoltaic cells incorporating thin film CdSe and CdSe /SUB x/ Te /SUB 1-x/ photoanodes has progressed to the point where efficiencies of up to 7% can be achieved on small area electrodes using a polysulfide electrolyte. Higher efficiencies can be obtained in alternate electrolytes in significantly less stable systems. The major limitations on cell efficiency are associated with the open circuit voltage and fill factor. At present, the most promising photoelectrochemical storage system is an in situ three electrode cell which consists of an n-CdSe /SUB x/ Te /SUB 1-x/ photoanode and CoS counterelectrode in a sulfide/polysulfide electrolyte and a Sn/SnS storage electrode isolated in an aqueous sulfide electrolyte.

  16. Direct bandgap materials based on the thin films of SexTe100 − x nanoparticles

    PubMed Central

    2012-01-01

    In this study, we fabricated thin films of SexTe100 − x (x = 0, 3, 6, 9, 12, and 24) nanoparticles using thermal evaporation technique. The results obtained by X-ray diffraction show that the as-synthesized nanoparticles have polycrystalline structure, but their crystallinity decreases by increasing the concentration of Se. They were found to have direct bandgap (Eg), whose value increases by increasing the Se content. These results are completely different than those obtained in the films of SexTe100 − x microstructure counterparts. Photoluminescence and Raman spectra for these films were also demonstrated. The remarkable results obtained in these nanoparticles specially their controlled direct bandgap might be useful for the development of optical disks and other semiconductor devices. PMID:22978714

  17. Microstructure of Thin Films

    DTIC Science & Technology

    1990-02-07

    optical properties ." (Final text in preparation). John Lehan, "Microstructural analysis of thin films by Rutherford Backscattering...correlation of optical properties and micro- Ion assisted deposition (IAD) is known to produce structure of IAD thin films with ion beam parameters thin films ...1.5-eV interband absorption. P (eV) R (%) P (, -V) R %) Optical properties of metal thin films in the spectral 0 98.3 0 88.8 range of

  18. Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials

    NASA Astrophysics Data System (ADS)

    Lee, Myung-Won; Pearson, Christopher; Moon, Tae Jung; Fisher, Alison L.; Petty, Michael C.

    2014-12-01

    We report on the effects of device processing conditions, and of changing the electrode materials, on the switching and negative differential resistance (NDR) behaviour of metal/organic thin film/metal structures. The organic material was an ambipolar molecule containing both electron transporting (oxadiazole) and hole transporting (carbazole) chemical groups. Switching and NDR effects are observed for device architectures with both electrodes consisting of aluminium; optimized switching behaviour is achieved for structures incorporating gold nanoparticles. If one of the Al electrodes is replaced by a higher work function metal or coated with an electron-blocking layer, switching and NDR are no longer observed. The results are consistent with a model based on the creation and destruction of Al filaments within the thin organic layer.

  19. Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications.

    PubMed

    Ehsan, Muhammad Ali; Peiris, T A Nirmal; Wijayantha, K G Upul; Olmstead, Marilyn M; Arifin, Zainudin; Mazhar, Muhammad; Lo, K M; McKee, Vickie

    2013-08-14

    Symmetrical and unsymmetrical dithiocarbamato pyridine solvated and non-solvated complexes of indium(III) with the general formula [In(S2CNRR')3]·n(py) [where py = pyridine; R,R' = Cy, n = 2 (1); R,R' = (i)Pr, n = 1.5 (2); NRR' = Pip, n = 0.5 (3) and R = Bz, R' = Me, n = 0 (4)] have been synthesized. The compositions, structures and properties of these complexes have been studied by means of microanalysis, IR and (1)H-NMR spectroscopy, X-ray single crystal and thermogravimetric (TG/DTG) analyses. The applicability of these complexes as single source precursors (SSPs) for the deposition of β-In2S3 thin films on fluorine-doped SnO2 (FTO) coated conducting glass substrates by aerosol-assisted chemical vapour deposition (AACVD) at temperatures of 300, 350 and 400 °C is studied. All films have been characterized by powder X-ray diffraction (PXRD) and energy dispersive X-ray analysis (EDX) for the detection of phase and stoichiometry of the deposit. Scanning electron microscopy (SEM) studies reveal that precursors (1)-(4), irrespective of different metal ligand design, generate comparable morphologies of β-In2S3 thin films at different temperatures. Direct band gap energies of 2.2 eV have been estimated from the UV-vis spectroscopy for the β-In2S3 films fabricated from precursors (1) and (4). The photoelectrochemical (PEC) properties of β-In2S3 were confirmed by recording the current-voltage plots under light and dark conditions. The plots showed anodic photocurrent densities of 1.25 and 0.65 mA cm(-2) at 0.23 V vs. Ag/AgCl for the β-In2S3 films made at 400 and 350 °C from the precursors (1) and (4), respectively. The photoelectrochemical performance indicates that the newly synthesised precursors are highly useful in fabricating β-In2S3 electrodes for solar energy harvesting and optoelectronic application.

  20. Molecular solution approach to synthesize electronic quality Cu2ZnSnS4 thin films.

    PubMed

    Yang, Wenbing; Duan, Hsin-Sheng; Cha, Kitty C; Hsu, Chia-Jung; Hsu, Wan-Ching; Zhou, Huanping; Bob, Brion; Yang, Yang

    2013-05-08

    Successful implementation of molecular solution processing from a homogeneous and stable precursor would provide an alternative, robust approach to process multinary compounds compared with physical vapor deposition. Targeting deposition of chemically clear, high quality crystalline films requires specific molecular structure design and solvent selection. Hydrazine (N2H4) serves as a unique and powerful medium, particularly to incorporate selected metallic elements and chalcogens into a stable solution as metal chalcogenide complexes (MCC). However, not all the elements and compounds can be easily dissolved. In this manuscript, we demonstrate a paradigm to incorporate previously insoluble transitional-metal elements into molecular solution as metal-atom hydrazine/hydrazine derivative complexes (MHHD), as exemplified by dissolving of the zinc constituent as Zn(NH2NHCOO)2(N2H4)2. Investigation into the evolution of molecular structure reveals the hidden roadmap to significantly enrich the variety of building blocks for soluble molecule design. The new category of molecular structures not only set up a prototype to incorporate other elements of interest but also points the direction for other compatible solvent selection. As demonstrated from the molecular precursor combining Sn-/Cu-MCC and Zn-MHHD, an ultrathin film of copper zinc tin sulfide (CZTS) was deposited. Characterization of a transistor based on the CZTS channel layer shows electronic properties comparable to CuInSe2, confirming the robustness of this molecular solution processing and the prospect of earth abundant CZTS for next generation photovoltaic materials. This paradigm potentially outlines a universal pathway, from individual molecular design using selected chelated ligands and combination of building blocks in a simple and stable solution to fundamentally change the way multinary compounds are processed.

  1. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  2. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  3. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    PubMed

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO.

  4. Molecular and thin film properties of cobalt half-sandwich compounds for optoelectronic application.

    PubMed

    Reinhardt, Maxwell; Dalgleish, Simon; Shuku, Yoshiaki; Reissig, Louisa; Matsushita, Michio M; Crain, Jason; Awaga, Kunio; Robertson, Neil

    2017-03-01

    The structure and electronic properties of a novel cobalt half sandwich complex of cyclopentadiene (Cp) and diaminonaphthalene (DAnap) [CpCo(DAnap)] are described and compared to the previously reported diaminobenzene derivative [CpCo(DAbnz)] in view of their potential for (opto)electronic device application. Both complexes show stable redox processes, tunable through the diaminoacene ligand, and show strong absorption in the visible region, with additional transitions stretching into the near infrared (NIR). CpCo(DAnap) crystallises with a particularly large unit cell (9301 Å(3)), comprising 32 molecules, with a gradual rotation over 8 molecules along the long c-axis. In the solid state the balance of the optical transitions in both complexes is reversed, with a suppression of the visible band and an enhancement of the NIR band, attributed to extensive intermolecular electronic interaction. In the case of CpCo(DAnap), highly crystalline thin films could be formed under physical vapor deposition, which show a photocurrent response stretching into the NIR, and p-type semiconductor behavior in field effect transistors with mobility values of the order 1 × 10(-4) cm(2) V(-1) s(-1). The device performance is understood through investigation of the morphology of the grown films.

  5. Ferredoxin molecular thin film with intrinsic switching mechanism for biomemory application.

    PubMed

    Yagati, Ajay Kumar; Kim, Sang-Uk; Min, Junhong; Choi, Jeong-Woo

    2010-05-01

    A biomemory device consisting of cysteine modified ferredoxin molecules which possess a memory effect via a charge transfer mechanism was developed. For achieving an efficient bioelectronic device, cysteine modified ferredoxin was developed by embodying cysteine residues in ferredoxin by site--directed mutagenesis method to directly coordinate with the gold (Au) surface without use of any additional linkers. The thin film formation of ferredoxin molecules on Au electrode is confirmed by surface plasmon resonance (SPR) spectroscopy and scanning tunneling microscope (STM). Cyclic voltammetry (CV) and open circuit potential amperometry (OCPA) methods were used to verify the memory switching characteristics of the fabricated device. The charge transfer between ferredoxin protein molecules and Au electrode enables a bi-stable electrical conductivity allowing the system to be used as a digital memory device. Data storage is achieved by applying redox voltages which are within the range of -500 mV. These results suggest that the proposed device has a function of memory and can be used for the construction of a nano-scale bioelectronic device.

  6. Molecular fouling resistance of zwitterionic and amphiphilic initiated chemically vapor-deposited (iCVD) thin films

    SciTech Connect

    Yang, R; Goktekin, E; Wang, MH; Gleason, KK

    2014-08-08

    Biofouling is a universal problem in various applications ranging from water purification to implantable biomedical devices. Recent advances in surface modification have created a rich library of antifouling surface chemistries, many of which can be categorized into one of the two groups: hydrophilic surfaces or amphiphilic surfaces. We report the straightforward preparation of antifouling thin film coatings in both categories via initiated chemical vapor deposition. A molecular force spectroscopy-based method is demonstrated as a rapid and quantitative assessment tool for comparing the differences in antifouling characteristics. The fouling propensity of single molecules, as opposed to bulk protein solution or bacterial culture, is assessed. This method allows for the interrogation of molecular interaction without the complication resulted from protein conformational change or micro-organism group interactions. The molecular interaction follows the same trend as bacterial adhesion results obtained previously, demonstrating that molecular force probe is a valid method for the quantification and mechanistic examination of fouling. In addition, the molecular force spectroscopy-based method is able to distinguish differences in antifouling capability that is not resolvable by traditional static protein adsorption tests. To lend further insight into the intrinsic fouling resistance of zwitterionic and amphiphilic surface chemistries, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, advancing and receding water contact angles, and atomic force microscopy are used to elucidate the film properties that are relevant to their antifouling capabilities.

  7. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  8. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  9. Study of electrochemical properties of thin film materials obtained using plasma technologies for production of electrodes for pacemakers

    NASA Astrophysics Data System (ADS)

    Obrezkov, O. I.; Vinogradov, V. P.; Krauz, V. I.; Mozgrin, D. V.; Guseva, I. A.; Andreev, E. S.; Zverev, A. A.; Starostin, A. L.

    2016-09-01

    Studies of thin film materials (TFM) as coatings of tips of pacemaker electrodes implanted into the human heart have been performed. TFM coatings were deposited in vacuum by arc magnetron discharge plasma, by pulsed discharge of “Plasma Focus”, and by electron beam evaporation. Simulation of electric charge transfer to the heart in physiological blood- imitator solution and determination of electrochemical properties of the coatings were carried out. TFM of highly developed surface of contact with tissue was produced by argon plasma spraying of titanium powder with subsequent coating by titanium nitride in vacuum arc assisted by Ti ion implantation. The TFM coatings of pacemaker electrode have passed necessary clinical tests and were used in medical practice. They provide low voltage myocardium stimulation thresholds within the required operating time.

  10. Nanoporous TiO2/polyion thin-film-coated long-period grating sensors for the direct measurement of low-molecular-weight analytes.

    PubMed

    Yang, Rui-Zhu; Dong, Wen-Fei; Meng, Xiang; Zhang, Xu-Lin; Sun, Yun-Lu; Hao, Ya-Wei; Guo, Jing-Chun; Zhang, Wen-Yi; Yu, Yong-Sen; Song, Jun-Feng; Qi, Zhi-Mei; Sun, Hong-Bo

    2012-06-12

    We present novel nanoporous TiO(2)/polyion thin-film-coated long-period fiber grating (LPFG) sensors for the direct measurement of low-molecular-weight chemicals by monitoring the resonance wavelength shift. The hybrid overlay films are prepared by a simple layer-by-layer deposition approach, which is mainly based on the electrostatic interaction of TiO(2) nanoparticles and polyions. By the alternate immersion of LPFG into dispersions of TiO(2) nanoparticles and polyions, respectively, the so-formed TiO(2)/polyion thin film exhibits a unique nanoporous internal structure and has a relative higher refractive index than LPFG cladding. In particular, the porosity of the thin film reduces the diffusion coefficient and enhances the permeability retention of low-molecular-weight analytes within the porous film. The increases in the refractive index of the LPFG overlay results in a distinguished modulation of the resonance wavelength. Therefore, the detection sensitivity of LPFG sensors has been greatly improved, according to theoretical simulation. After the structure of the TiO(2)/polyion thin film was optimized, glucose solutions as an example with a low concentration of 10(-7) M was easily detected and monitored at room temperature.

  11. A thin film nitinol heart valve.

    PubMed

    Stepan, Lenka L; Levi, Daniel S; Carman, Gregory P

    2005-11-01

    In order to create a less thrombogenic heart valve with improved longevity, a prosthetic heart valve was developed using thin film nitinol (NiTi). A "butterfly" valve was constructed using a single, elliptical piece of thin film NiTi and a scaffold made from Teflon tubing and NiTi wire. Flow tests and pressure readings across the valve were performed in vitro in a pulsatile flow loop. Bio-corrosion experiments were conducted on untreated and passivated thin film nitinol. To determine the material's in vivo biocompatibility, thin film nitinol was implanted in pigs using stents covered with thin film NiTi. Flow rates and pressure tracings across the valve were comparable to those through a commercially available 19 mm Perimount Edwards tissue valve. No signs of corrosion were present on thin film nitinol samples after immersion in Hank's solution for one month. Finally, organ and tissue samples explanted from four pigs at 2, 3, 4, and 6 weeks after thin film NiTi implantation appeared without disease, and the thin film nitinol itself was without thrombus formation. Although long term testing is still necessary, thin film NiTi may be very well suited for use in artificial heart valves.

  12. Molecularly imprinted protein recognition thin films constructed by controlled/living radical polymerization.

    PubMed

    Sasaki, Shogo; Ooya, Tooru; Kitayama, Yukiya; Takeuchi, Toshifumi

    2015-02-01

    We demonstrated the synthesis of molecularly imprinted polymers (MIPs) with binding affinity toward a target protein, ribonuclease A (RNase) by atom transfer radical polymerization (ATRP) of acrylic acid, acrylamide, and N,N'-methylenebisacrylamide in the presence of RNase. The binding activity of the MIPs was evaluated by surface plasmon resonance (SPR) of the MIP thin layers prepared on the gold-coated sensor chips. The MIPs prepared by ATRP (MIP-ATRP) had a binding affinity toward RNase with larger binding amount compared to MIPs prepared by conventional free radical polymerization methods (MIP-RP). Moreover, protein selectivity was evaluated using reference proteins (cytochrome c, myoglobin, and α-lactalbumin) and was confirmed in MIP-ATRP of optimum film thickness determined experimentally to be 15-30 nm; however, protein selectivity was not achieved in all MIP-RP. We have shown that ATRP is powerful technique for preparing protein recognition materials by molecular imprinting.

  13. Molecular layer deposition of functional thin films for advanced lithographic patterning.

    PubMed

    Zhou, Han; Bent, Stacey F

    2011-02-01

    Photoresist materials comprise one of the main challenges faced by lithography to meet the requirements of electronic device size scaling. Here we report for the first time the use of molecular layer deposition (MLD) to produce photoresist materials with controllable placement of functional moieties. Polyurea resists films are deposited by MLD using urea coupling reactions between 1,4-phenylene diisocyanate (PDIC) and ethylenediamine (ED) or 2,2'-(propane-2,2-diylbis(oxy))diethanamine (PDDE) monomers in a layer-by-layer fashion with a linear growth rate, allowing acid-labile groups to be incorporated into the film at well-controlled positions. The films are deposited with stoichiometric compositions and have highly uniform surface morphology as investigated using atomic force microscopy. We show that acid treatment can cleave the backbone of the polyurea film at positions where the acid-labile groups are embedded. We further show that after soaking the polyurea film with photoacid generator (PAG), it acts as a photoresist material and we present several UV patterning demonstrations. This approach presents a new way to make molecularly designed resist films for lithography.

  14. Some aspects of atom probe specimen preparation and analysis of thin film materials.

    PubMed

    Thompson, G B; Miller, M K; Fraser, H L

    2004-07-01

    Some of the factors in the preparation of atom probe specimens of metallic multilayer thin films have been investigated. A series of Ti/Nb multilayer films were sputtered deposited on n-doped Si [001] substrates with either 5 or 0.05Omega cm resistivity. Each wafer was pre-fabricated into a series of 5 microm x 5 microm x approximately 80 microm island posts by photolithography and reactive ion etching. Once the film was grown on the wafer, a Si post was mounted to either a tungsten or stainless steel fine tip needle that was mechanically crimped to a Cu tube for handling. The specimen was then loaded into a Focus Ion Beam instrument where a sacrificial Pt cap was in situ deposited onto the surface of the film and subsequently annularly ion milled into the appropriate geometry. The Pt cap was found to be an effective method in reducing Ga ion damage and implantation into the film during milling. The multilayers deposited on the high resistivity Si exhibited uncontrolled field evaporation which lead to high mass tails in the mass spectra, a reduction in the mass resolution, high background noise, propensity for "flash-failure", and a variation in the apparent layer thickness as the experiment elapsed in time. The multilayers deposited on lower resistivity Si did not suffer from these artifacts.

  15. Vacancy related defects in thin film Pb(ZrTi)O{sub 3} materials

    SciTech Connect

    Krishnan, A.; Keeble, D.J.; Ramesh, R.; Warren, W.L.; Tuttle, B.A.; Pfeffer, R.L.; Nielsen, B.; Lynn, K.G.

    1994-12-31

    Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(ZrTi)O{sub 3} (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO{sub 2} electrodes, or by laser ablation with La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrodes. The RuO{sub 2} and La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La{sub 0.5}Sr{sub 0.5}CoO{sub 3} layers was observed indicating an increase in neutral or negatively charged open-volume defects.

  16. Production of Brewster angle thin film polarizers using a ZrO2/SiO2 pair of materials.

    PubMed

    Zhupanov, V; Kozlov, I; Fedoseev, V; Konotopov, P; Trubetskov, M; Tikhonravov, A

    2017-02-01

    The production of polarizers for high-intensity applications based on a ZrO2/SiO2 pair of thin film materials is discussed. A special approach to accurate determination of a ZrO2 refractive index and the application of direct broadband optical monitoring enable obtaining good manufacturing results.

  17. A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS

    NASA Technical Reports Server (NTRS)

    Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor); Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor)

    2004-01-01

    A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

  18. Visualization of molecular packing and tilting domains and interface effects in tetracene thin films on H/Si(001)

    DOE PAGES

    Tersigni, Andrew; Sadowski, Jerzy T.; Qin, Xiao-Rong

    2017-03-27

    Visualizing molecular crystalline domains and influence of substrate defects are important in understanding the charge transport in organic thin film devices. Vacuum evaporated tetracene films of four monolayers on hydrogen-terminated Si(001)-2x1 substrate, as a prototypical system, have been studied with ex situ atomic force microscopy (AFM), transverse shear microscopy (TSM), friction force microscopy (FFM), and low-energy electron microscopy (LEEM). Two differently oriented in-plane lattice domains are found due to the symmetry of the substrate lattice, with no visible azimuthal twist between adjacent molecular layers in surface islands, indicating significant bulk-like crystallization in the film. Meanwhile, two types of subdomains aremore » observed inside of each in-plane lattice domain. The subdomains are anisotropic in shape, and their sizes and distribution are highly influenced by the substrate atomic steps. TSM and FFM measurements indicate that these subdomains result from molecule-tilt orderings within the bulk-like lattice domains. Lastly, TSM evidently shows a sensitivity to probe vertical molecule-tilt anisotropy for the molecular crystals, in addition to its known ability to map the lateral lattice orientations.« less

  19. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  20. Directed Ordering of Block Copolymer Thin Films with Flexible Interfaces for Functional Materials

    NASA Astrophysics Data System (ADS)

    Karim, Alamgir

    2012-02-01

    Orientation control of block copolymer (BCP) films is important for advanced technological applications. We present studies on directed ordering of block copolymer thin films on rigid substrates such as quartz to elastomeric PDMS and flexible Kapton substrates for tunable orientation of microphase separated poly (styrene) -- block -poly (methylmethacrylate) (PS-PMMA) cylinder and lamellae forming BCP films. Although the crosslinked PDMS has low surface energy, its surface energy can be tuned by exposing to UV-Ozone (UVO) that presents an opportunity to change BCP-PDMS interfacial energy to control BCP orientation across full range of orientation and film wettability. On the other hand, Kapton offers a near neutral surface for PS-PMMA without surface modification. Via a modified version of a dynamic thermal processing termed cold zone annealing-sharp (CZA-S), we obtain a wide range of orientations of the block copolymer films in unfilled and nanoparticle filled systems with an interest in photovoltaic systems. With CZA-S, vertical orientation of PS-PMMA can be obtained in films as thick as 1 micron with etchable PMMA domains for membrane applications. GISAXS characterization of these etched BCP membranes reveals up to 5 orders of diffraction indicating hexagonally packed vertical nanopores that extend throughout the film. Under similar thermal gradient, but static conditions, temporally stable vertical cylinders form only within a narrow zone of maximum temperature gradient. Primary CZA-S ordering mechanism thus involves propagating this narrow vertically oriented zone of BCP cylinders created at the maximum thermal gradient section, across the film. An optimal speed is needed since the process competes with preferential surface wetting dynamics that favors parallel orientation. These results are reproduced on large area flexible films on a prototype dynamic R2R assembly platform with incorporated multi-CZA gradient for thin (100 nm) BCP films currently.

  1. Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Horsley, Kimberly Anne

    Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

  2. Attachment of lead wires to thin film thermocouples mounted on high temperature materials using the parallel gap welding process

    NASA Technical Reports Server (NTRS)

    Holanda, Raymond; Kim, Walter S.; Pencil, Eric; Groth, Mary; Danzey, Gerald A.

    1990-01-01

    Parallel gap resistance welding was used to attach lead wires to sputtered thin film sensors. Ranges of optimum welding parameters to produce an acceptable weld were determined. The thin film sensors were Pt13Rh/Pt thermocouples; they were mounted on substrates of MCrAlY-coated superalloys, aluminum oxide, silicon carbide and silicon nitride. The entire sensor system is designed to be used on aircraft engine parts. These sensor systems, including the thin-film-to-lead-wire connectors, were tested to 1000 C.

  3. Molecular dynamics study on the effect of boundary heating rate on the phase change characteristics of thin film liquid

    NASA Astrophysics Data System (ADS)

    Hasan, Mohammad Nasim; Morshed, A. K. M. Monjur; Rabbi, Kazi Fazle; Haque, Mominul

    2016-07-01

    In this study, theoretical investigation of thin film liquid phase change phenomena under different boundary heating rates has been conducted with the help of molecular dynamics simulation. To do this, the case of argon boiling over a platinum surface has been considered. The study has been conducted to get a better understanding of the nano-scale physics of evaporation/boiling for a three phase system with particular emphasis on the effect of boundary heating rate. The simulation domain consisted of liquid and vapor argon atoms placed over a platinum wall. Initially the whole system was brought to an equilibrium state at 90K with the help of equilibrium molecular dynamics and then the temperature of the bottom wall was increased to a higher temperature (250K/130K) over a finite heating period. Depending on the heating period, the boundary heating rate has been varied in the range of 1600×109 K/s to 8×109 K/s. The variations of argon region temperature, pressure, net evaporation number with respect to time under different boundary heating rates have been determined and discussed. The heat fluxes normal to platinum wall for different cases were also calculated and compared with theoretical upper limit of maximum possible heat transfer to elucidate the effect of boundary heating rate.

  4. Molecular organization in MAPLE-deposited conjugated polymer thin films and the implications for carrier transport characteristics

    SciTech Connect

    Dong, Ban Xuan; Li, Anton; Strzalka, Joseph; Stein, Gila E.; Green, Peter F.

    2016-09-18

    The morphological structure of poly(3-hexylthiophene) (P3HT) thin films deposited by both Matrix Assisted Pulsed Laser Evaporation (MAPLE) and solution spin-casting methods are investigated. We found that the MAPLE samples possessed a higher degree of disorder, with random orientations of polymer crystallites along the side-chain stacking, π-π stacking, and conjugated backbone directions. Furthermore, the average molecular orientations and relative degrees of crystallinity of MAPLE-deposited polymer films are insensitive to the chemistries of the substrates onto which they were deposited; this is in stark contrast to the films prepared by the conventional spin-casting technique. In spite of the seemingly unfavorable molecular orientations and the highly disordered morphologies, the in-plane charge carrier transport characteristics of the MAPLE samples are comparable to those of spin-cast samples, exhibiting similar transport activation energies (56 meV versus 54 meV) to those reported in the literature for high mobility polymers.

  5. Molecular organization in MAPLE-deposited conjugated polymer thin films and the implications for carrier transport characteristics

    DOE PAGES

    Dong, Ban Xuan; Li, Anton; Strzalka, Joseph; ...

    2016-09-18

    The morphological structure of poly(3-hexylthiophene) (P3HT) thin films deposited by both Matrix Assisted Pulsed Laser Evaporation (MAPLE) and solution spin-casting methods are investigated. We found that the MAPLE samples possessed a higher degree of disorder, with random orientations of polymer crystallites along the side-chain stacking, π-π stacking, and conjugated backbone directions. Furthermore, the average molecular orientations and relative degrees of crystallinity of MAPLE-deposited polymer films are insensitive to the chemistries of the substrates onto which they were deposited; this is in stark contrast to the films prepared by the conventional spin-casting technique. In spite of the seemingly unfavorable molecular orientations andmore » the highly disordered morphologies, the in-plane charge carrier transport characteristics of the MAPLE samples are comparable to those of spin-cast samples, exhibiting similar transport activation energies (56 meV versus 54 meV) to those reported in the literature for high mobility polymers.« less

  6. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T.

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  7. Effect of thin film confined between two dissimilar solids on interfacial thermal resistance.

    PubMed

    Liang, Zhi; Tsai, Hai-Lung

    2011-12-14

    A non-equilibrium molecular dynamics model is developed to investigate how a thin film confined between two dissimilar solids affects the thermal transport across the material interface. For two highly dissimilar (phonon frequency mismatched) solids, it is found that the insertion of a thin film between them can greatly enhance thermal transport across the material interface by a factor of 2.3 if the thin film has one of the following characteristics: (1) a multi-atom-thick thin film of which the phonon density of states (DOS) bridges the two different phonon DOSs for the solid on each side of the thin film; (2) a single-atom-thick film which is weakly bonded to the solid on both sides of the thin film. The enhanced thermal transport in the single-atom-thick film case is found mainly due to the increased inelastic scattering of phonons by the atoms in the film. However, for solid-solid interfaces with a relatively small difference in the phonon DOS, it is found that the insertion of a thin film may decrease the thermal transport.

  8. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    SciTech Connect

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  9. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS

    SciTech Connect

    Jie Guan; Nguyen Minh

    2003-12-01

    This report summarizes the results of the work conducted under the program: ''Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells'' under contract number DE-AC26-00NT40711. The program goal is to advance materials and processes that can be used to produce economical, high-performance solid oxide fuel cells (SOFC) capable of achieving extraordinary high power densities at reduced temperatures. Under this program, anode-supported thin electrolyte based on lanthanum gallate (LSMGF) has been developed using tape-calendering process. The fabrication parameters such as raw materials characteristics, tape formulations and sintering conditions have been evaluated. Dense anode supported LSGMF electrolytes with thickness range of 10-50 micron have been fabricated. High performance cathode based on Sr{sub 0.5}Sm{sub 0.5}CoO{sub 3} (SSC) has been developed. Polarization of {approx}0.23 ohm-cm{sup 2} has been achieved at 600 C with Sr{sub 0.5}Sm{sub 0.5}CoO{sub 3}cathode. The high-performance SSC cathode and thin gallate electrolyte have been integrated into single cells and cell performance has been characterized. Tested cells to date generally showed low performance because of low cell OCVs and material interactions between NiO in the anode and lanthanum gallate electrolyte.

  10. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    SciTech Connect

    Hellman, F.

    1998-07-20

    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  11. A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

    NASA Astrophysics Data System (ADS)

    Adelifard, Mehdi; Darudi, Hosein

    2016-07-01

    There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

  12. Spinodal decomposition in thin films: Molecular-dynamics simulations of a binary Lennard-Jones fluid mixture

    NASA Astrophysics Data System (ADS)

    Das, Subir K.; Puri, Sanjay; Horbach, Jürgen; Binder, Kurt

    2006-03-01

    We use molecular dynamics (MD) to simulate an unstable homogeneous mixture of binary fluids (AB), confined in a slit pore of width D . The pore walls are assumed to be flat and structureless and attract one component of the mixture (A) with the same strength. The pairwise interactions between the particles are modeled by the Lennard-Jones potential, with symmetric parameters that lead to a miscibility gap in the bulk. In the thin-film geometry, an interesting interplay occurs between surface enrichment and phase separation. We study the evolution of a mixture with equal amounts of A and B, which is rendered unstable by a temperature quench. We find that A-rich surface enrichment layers form quickly during the early stages of the evolution, causing a depletion of A in the inner regions of the film. These surface-directed concentration profiles propagate from the walls towards the center of the film, resulting in a transient layered structure. This layered state breaks up into a columnar state, which is characterized by the lateral coarsening of cylindrical domains. The qualitative features of this process resemble results from previous studies of diffusive Ginzburg-Landau-type models [S. K. Das, S. Puri, J. Horbach, and K. Binder, Phys. Rev. E 72, 061603 (2005)], but quantitative aspects differ markedly. The relation to spinodal decomposition in a strictly two-dimensional geometry is also discussed.

  13. Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Yang, H. F.; Liu, Z. T.; Fan, C. C.; Yao, Q.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Shen, D. W.

    2016-08-01

    By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO3 and iso-polarity LaAlO3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO3 (111) substrate was more suitable than Nb-doped SrTiO3. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO3 based superlattices.

  14. Influence of substrate materials on the properties of CdTe thin films grown by hot-wall epitaxy

    NASA Astrophysics Data System (ADS)

    Bilevych, Ye.; Soshnikov, A.; Darchuk, L.; Apatskaya, M.; Tsybrii, Z.; Vuychik, M.; Boka, A.; Sizov, F.; Boelling, O.; Sulkio-Cleff, B.

    2005-02-01

    Growth of high-quality CdTe thin films by hot-wall epitaxy (HWE) under different temperature conditions and the control of their physical, electrical and structural properties have been examined by various ways. CdTe (1 1 0), Zn 0.04Cd 0.96Te (1 1 1), Hg 0.2Cd 0.8Te (1 1 1), Si (1 1 1) and BaF 2 (1 1 1) were used as substrates. The obtained films have the cut-off wavelength at 0.84-0.85 μm and the transmission of about 55-60% out of the fundamental absorption domain. The current-voltage investigations have shown that the contact properties strongly depend on the contact material and contact fabrication method and less depend on substrate materials. The film-specific resistances (4-7)×10 4 Ω cm were determined. The CdTe deposition (layer thickness about 1000 Å) on Cd xHg 1-xTe resulted in significant increase in photodiodes electrical parameters. All samples showed the crystalline structure according to the XRD data with strong influence on lattice mismatch between CdTe and substrate materials. Atomic force microscope (AFM) investigations have shown a smooth and defect-free surface with a roughness range of 15-100 nm for 50 μm of basic length.

  15. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics.

    PubMed

    Eisenberg, Daniel A; Yu, Mengjing; Lam, Carl W; Ogunseitan, Oladele A; Schoenung, Julie M

    2013-09-15

    Copper-indium-gallium-selenium-sulfide (CIGS) thin film photovoltaics are increasingly penetrating the market supply for consumer solar panels. Although CIGS is attractive for producing less greenhouse gas emissions than fossil-fuel based energy sources, CIGS manufacturing processes and solar cell devices use hazardous materials that should be carefully considered in evaluating and comparing net environmental benefits of energy products. Through this research, we present a case study on the toxicity hazards associated with alternative materials selection for CIGS manufacturing. We applied two numeric models, The Green Screen for Safer Chemicals and the Toxic Potential Indicator. To improve the sensitivity of the model outputs, we developed a novel, life cycle thinking based hazard assessment method that facilitates the projection of hazards throughout material life cycles. Our results show that the least hazardous CIGS solar cell device and manufacturing protocol consist of a titanium substrate, molybdenum metal back electrode, CuInS₂ p-type absorber deposited by spray pyrolysis, ZnS buffer deposited by spray ion layer gas reduction, ZnO:Ga transparent conducting oxide (TCO) deposited by sputtering, and the encapsulant polydimethylsiloxane.

  16. Holographic thin film analyzer

    NASA Technical Reports Server (NTRS)

    Williams, J. R.; Norden, B. N. (Inventor)

    1973-01-01

    A system for the analysis and measurement of thin films in which the light output of a laser is split into two beams is discribed. The first beam is focused to illuminate the entire area of a photographic plate and the second beam is colummated and directed through a relatively small portion of the photographic plate onto the sample with the film to be observed. The surface of the sample is positioned at a slight angle with respect to a plane normal to the second beam and the light reflected from the sample arrives back at the photographic plate in a region other than through which the second beam originally passes. By making two successive exposures during the deposition of material on the surface of the sample, holograms are recorded on the photographic plate. The plate is then developed and interference lines of the hologram provide a measurement of the film or material deposited between exposure.

  17. Evaluation of structure and material properties of RF magnetron sputter-deposited yttria-stabilized zirconia thin films

    NASA Astrophysics Data System (ADS)

    Piascik, Jeffrey Robert

    Over the past several decades, research has focused on utilizing ceramic materials in new technological applications. Their uses have been primarily in applications that involve high temperatures or corrosive environments. Unfortunately, ceramic materials have been limited especially since they can be brittle, failing in a sudden and catastrophic manner. A strong emphasis on understanding mechanical properties of ceramics and ways to improving their strength and toughness, has led to many new technologies. The present work is part of a larger research initiative that is aimed at using RF magnetron sputter deposition of yttria-stabilized zirconia to improve the fracture toughness of brittle substrates (more specifically dental ceramics). Partially-stabilized zirconia (PSZ) has been studied extensively, due to its high temperature stability and stress-induced tetragonal to monoclinic (T⇒M) martensitic phase transformation. RF magnetron sputtering was chosen as the deposition method because of its versatility, especially the ability to deposit oxides at low temperatures. Initial investigations focused on the development of process-structure-properties of YSZ sputtered deposited thin films. The YSZ thin films were deposited over a range of temperatures (22--300°C), pressures (5--25 mTorr), and gas compositions (Ar:O2 ratio). Initial studies characterized a select set of properties in relation to deposition parameters including: refractive index, structure, and film stress. X-ray Diffraction (XRD) showed that the films are comprised of mainly monoclinic and tetragonal crystal phases. The film refractive index determined by prism coupling, depends strongly on deposition conditions and ranged from 1.959 to 2.223. Wafer bow measurements indicate that the sputtered YSZ films can have initial stress ranging from 86 MPa tensile to 192 MPa compressive, depending on the deposition parameters. Exposure to ambient conditions (25°C, 75% relative humidity) led to large increase

  18. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  19. Thin film interference of colloidal thin films.

    PubMed

    Cong, Hailin; Cao, Weixiao

    2004-09-14

    A stairlike colloidal crystal thin film composed of poly(styrene-methyl methacrylate-acrylic acid) (P(St-MMA-AA)) monodispersed colloids was fabricated on an inclined silicon substrate. Different bright colors were observed on the various parts of the film with different layers as white light irradiated perpendicularly on it. The relationship between the colors and layers of the film was investigated and discussed according to the principle of thin film interference. On the basis of the phenomenon of thin film interference, a one-layer colloidal film having uniform color was researched and it would display diverse colors before and after swollen by styrene (St). A circular stairlike colloidal film was achieved to mimic the colors of the peacock tail feather.

  20. [Study on preparation of lanthanum-doped TiO2 nanometer thin film materials and its photocatalytic activity].

    PubMed

    Zheng, Huai-li; Tang, Ming-fang; Gong, Ying-kun; Deng, Xiao-jun; Wu, Bang-hua

    2003-04-01

    In this paper, lanthanum-doped TiO2 nanometer film materials coated on glass were prepared in Ti(OBu)4 precursor solutions by sol-gel processing. Transmittance and photocatalytic activity were respectively investigated and tested for these nanometer thin films prepared with different amount of lanthanum (La), different amount of polyethylene glycol (PEG), and different coating layer times. Some reactive mechanisms were also discussed. For one layer La-addition had little effect on the film transmissivity; but the photocatalytic activity was significantly improved due to La-addition. With increasing PEG, the transmittance of the film decreased for one layer film; but its photocatalytic activity did not rise. Increasing layer number did not affect the transmissivity of multilayer film. After coating two times, increasing layer number did not significantly improve the photocatalytic activity. The highest photocatalytic activity and best transmissivity were obtained for two layer TiO2 film when the dosage of lanthanum was 0.5 g and the dosage of polyethylene was 0.2 g in the precursor solutions. These materials will probably be used in the protection of environment, waste water treatment, and air purification.

  1. High-throughput characterization of Pt supported on thin film oxide material libraries applied in the oxygen reduction reaction.

    PubMed

    Schäfer, Dominik; Mardare, Cezarina; Savan, Alan; Sanchez, Miguel D; Mei, Bastian; Xia, Wei; Muhler, Martin; Ludwig, Alfred; Schuhmann, Wolfgang

    2011-03-15

    Thin film metal oxide material libraries were prepared by sputter deposition of nanoscale Ti/Nb precursor multilayers followed by ex situ oxidation. The metal composition was varied from 6 at.% Nb to 27 at.% Nb. Additionally, thin wedge-type layers of Pt with a nominal thickness gradient from 0 to 5 nm were sputter-deposited on top of the oxides. The materials libraries were characterized with respect to metallic film composition, oxide thickness, phases, electrical conductivity, Pt thickness, and electrochemical activity for the oxygen reduction reaction (ORR). Electrochemical investigations were carried out by cyclic voltammetry using an automated scanning droplet cell. For a nominal Pt thickness >1 nm, no significant dependence of the ORR activity on the Pt thickness or the substrate composition was observed. However, below that critical thickness, a strong decrease of the surface-normalized activity in terms of reduction currents and potentials was observed. For such thin Pt layers, the conductivity of the substrate seems to have a substantial impact on the catalytic activity. Results from X-ray photoelectron spectroscopy (XPS) measurements suggest that the critical Pt thickness coincides with the transition from a continuous Pt film into isolated particles at decreasing nominal Pt thickness. In the case of isolated Pt particles, the activity of Pt decisively depends on its ability to exchange electrons with the oxide layer, and hence, a dependence on the substrate conductivity is rationalized.

  2. Thin-film assembly of diethanolamine-based lipidic material as potential gene carrier in mouse embryonic neural stem cells.

    PubMed

    Kusumoto, Ken-Ichi; Yamashita, Satoko; Nagata, Takahiro; Ido, Takeshi; Hamachi, Itaru; Akao, Tetsuyuki

    2009-10-01

    Understanding of lipidic materials used for gene delivery system is essential for the effective design and development of potential applications in basic and therapeutic research. This study aimed to evaluate the biological activity of totally synthesized ditetradecylacetyldiethanolaminetrimethylammonium (TMA-C2-DEA-C14) as gene carriers for neural stem cells. The transfer abilities were estimated by expressing green fluorescent protein (GFP) in mouse embryonic neural stem cells. Here, we demonstrate that lipidic assembly of TMA-C2-DEA-C14, which was self-organized by incubation in water for a month at 25 degrees C, can provide an efficient gene delivery with low cytotoxicity ( approximately 40% of GFP-expressed neural stem cells). However, when dispersed by ultrasonication, TMA-C2-DEA-C14 showed low effect ( approximately 4%). Moreover, electron microscopic analysis showed that TMA-C2-DEA-C14 assembly is characterized by thin-film structures with polygonal shapes ( approximately 2.7 mum), and after association with DNA, their structures dramatically changes to form liposome complexes that can effectively deliver DNA into the cellular cytoplasm of neural stem cells. Thus, TMA-C2-DEA-C14 assembly identified in this study was determined to have an effective activity as gene carriers for primary neural stem cells. Our findings suggest that this approach can serve as a novel model for the development of lipidic materials on nonviral gene delivery system.

  3. XPS-nanocharacterization of organic layers electrochemically grafted on the surface of SnO2 thin films to produce a new hybrid material coating

    NASA Astrophysics Data System (ADS)

    Drevet, R.; Dragoé, D.; Barthés-Labrousse, M. G.; Chaussé, A.; Andrieux, M.

    2016-10-01

    This work presents the synthesis and the characterization of hybrid material thin films obtained by the combination of two processes. The electrochemical grafting of organic layers made of carboxyphenyl moieties is carried out from the reduction of a diazonium salt on tin dioxide (SnO2) thin films previously deposited on Si substrates by metal organic chemical vapor deposition (MOCVD). Since the MOCVD experimental parameters impact the crystal growth of the SnO2 layer (i.e. its morphology and its texturation), various electrochemical grafting models can occur, producing different hybrid materials. In order to evidence the efficiency of the electrochemical grafting of the carboxyphenyl moieties, X-ray Photoelectron Spectroscopy (XPS) is used to characterize the first nanometers in depth of the synthesized hybrid material layer. Then three electrochemical grafting models are proposed.

  4. Mechanics of Thin Films

    DTIC Science & Technology

    1992-02-06

    S. Hwang, Thermal conductivity of thin films: measurement and microstructural effects, in Thin- film heat transfer, properties and processing, ed...thermal, electrical, optical and magnetic properties . As typical examples we mention microelectronics, optical coatings and multilayers for use in optical...interplay between mechanical properties (elastic moduli), thermal properties (thermal conductivity, thermal expansion coefficient), and optical

  5. [Capacitive sensor for environmental monitoring based on thin films of molecularly imprinted polymers. Computer modeling for optimization of the composition of synthetic analogs of bioreceptors].

    PubMed

    Serheieva, T A; Panasiuk-Dileni, T L; Pilets'ka, O V; Pilets'kyĭ, S A; Iel's'ka, H V

    2006-01-01

    A capacitive sensor for environmental monitoring based on thin films of desmetryn-selective molecularly imprinted polymer (MIP) was developed. The method of modification of gold electrodes with the thin film of herbicide-selective MIP using the grafting polymerization approach was developed. The method of computational modeling was used to optimize the composition of desmetryn-selective MIPs. It was shown that 2-acrylamido-2-methyl-1-propan-sulfonic acid is the optimal functional monomer for desmetryn. Formation of synthetic binding sites in MIPs was demonstrated to be determined by the binding energy between the template and functional monomers as well as the number of functional groups taking part in the recognition of the template molecule. Electrochemical processes occurring at the MIP-modified electrode were analyzed. The detection limit for desmetryn comprised 100 nM. High selectivity of the capacitive sensor towards structural analogues of desmetryn as well as high operational and storage stabilities was demonstrated.

  6. Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film

    NASA Astrophysics Data System (ADS)

    Oh, Sang Chul; Jung, Ho Yong; Lee, Heon

    2011-06-01

    Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO2/Pt structure. The variation of the chemical composition of TiO2 in the metal/TiO2/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO2/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO2. This suggests that the oxidation reaction at the interface between the TE metal and TiO2 might cause the TE/TiO2/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO2 thin film is a primary factor affecting the resistive switching characteristics of TiO2-based Resistive Random Access Memory devices.

  7. In vitro studies of PEG thin films with different molecular weights deposited by MAPLE

    NASA Astrophysics Data System (ADS)

    Paun, Irina Alexandra; Ion, Valentin; Luculescu, Catalin-Romeo; Dinescu, Maria; Canulescu, Stela; Schou, Jørgen

    2012-10-01

    In this work, polyethylene glycol (PEG) films were produced by Matrix Assisted Pulsed Laser Evaporation (MAPLE). The possibility to tailor the properties of the films by means of polymer molecular weight was explored. The films of PEG of average molecular weights 400 Da, 1450 Da, and 10000 Da (PEG400, PEG1450, and PEG10000) were investigated in vitro, in media similar with those inside the body (phosphate buffer saline PBS with pH 7.4 and blood). The mass of the polymer did not change during this treatment, but the polymer molecular weight was found to strongly influence the films properties and their behavior in vitro. Thus, immersion in PBS induced swelling of the PEG films, which was more pronounced for PEG polymers of higher molecular weight. Prior to immersion in PBS, the PEG films of higher molecular weight were more hydrophilic, the water contact angles decreasing from ˜66 grd for PEG400 to ˜41 grd for PEG1450 and to ˜15 grd for PEG10000. The same trend was observed during immersion of the PEG films in PBS. Before immersion in PBS, the refractive index of the films increased from ˜1.43 for PEG400 to ˜1.48 for PEG1450 and to ˜1.68 for PEG10000. During immersion in PBS the refractive index decreased gradually, but remained higher for the PEG molecules of higher mass. Finally, blood compatibility tests showed that the PEG films of higher molecular weight were most compatible with blood.

  8. Magnetic and transport properties of epitaxial thin film MgFe2O4 grown on MgO (100) by molecular beam epitaxy

    PubMed Central

    Wu, Han-Chun; Mauit, Ozhet; Coileáin, Cormac Ó; Syrlybekov, Askar; Khalid, Abbas; Mouti, Anas; Abid, Mourad; Zhang, Hong-Zhou; Abid, Mohamed; Shvets, Igor V.

    2014-01-01

    Magnesium ferrite is a very important magnetic material due to its interesting magnetic and electrical properties and its chemical and thermal stability. Here we report on the magnetic and transport properties of epitaxial MgFe2O4 thin films grown on MgO (001) by molecular beam epitaxy. The structural properties and chemical composition of the MgFe2O4 films were characterized by X-Ray diffraction and X-Ray photoelectron spectroscopy, respectively. The nonsaturation of the magnetization in high magnetic fields observed for M (H) measurements and the linear negative magnetoresistance (MR) curves indicate the presence of anti-phase boundaries (APBs) in MgFe2O4. The presence of APBs was confirmed by transmission electron microscopy. Moreover, post annealing decreases the resistance and enhances the MR of the film, suggesting migration of the APBs. Our results may be valuable for the application of MgFe2O4 in spintronics. PMID:25388355

  9. Ferroelectric Thin Films III, Symposium Held in San Francisco, California on April 13 - 16, 1993. Materials Research Society Symposium Proceedings, Volume 310

    DTIC Science & Technology

    1993-04-16

    prepare other materials such as LiTaO 3 was also examined. EXPERIMENTAL Likewise the previous process [9, 101, 0.5 M ethanol based precursor solutions for...to examine electrical properties of polycrystalline thin films prepared by the present process . The cleaned substrates were ethanol spin-dried...the ethanol based precursor showed lower refractive indices than LiNbO3 prepared from the methoxyethanol based 296 precursor. RTA processed LiNbO 3

  10. Nanostructured organic and inorganic thin films with novel molecular recognition properties

    NASA Astrophysics Data System (ADS)

    Twardowski, Mariusz Z.

    An important theme in surface/interface science is the development of molecular level understandings of interactions at solid-liquid interfaces. The study of molecular recognition at such interfaces is well suited for modeling with self-assembled monolayers of alkanethiols (SAMs). For optimal studies, the SAM must be defect-free. Towards this end, a chemical treatment of the gold substrate was developed, consisting of a sequential treatment in "piranha" followed by dilute aqua regia. We found that the SAMs assembled on these treated substrates had exceptional barrier properties as measured by cyclic voltammetry(CV). X-ray diffraction(XRD) indicated that oxidative treatment induces significant bulk recrystallization of the metal. The dynamics suggest that recrystallization results from preferential dissolution of Au and/or impurities present at grain boundaries, leading to unpinning and merger into larger grains. Supported lipid layers were formed via fusion of unilamellar vesicles of 1,2-dimyristoyl-sn-glycero-3-phosphocholine(DMPC) to mixed SAMs containing ferrocene-functionalized hexadecanethiol chains(FcCO 2C16SH). The structures were characterized by several methods, including CV, ellipsometry and surface plasmon resonance(SPR). Studies revealed that the adsorbed DMPC strongly influences the interactions of the tethered ferrocene groups with secondary aqueous molecular redox probes. Permselective properties are seen. We believe that molecular scale defect structures in the adsorbed DMPC layer confer these molecular discrimination properties. Unilamellar vesicles of DMPC and varying quantities of 1,2-dimyristoyl-sn-glycero-3-[phospho-rac-(1-glycerol)(sodium salt)(DMPG) were used to deposit lipid bilayer assemblies on SAMs. The coverages of the layers were measured with SPR and decreased with increasing DMPG. The assembly is reversible and the lipid adlayer removable with ethanol. Effects of the adsorbed lipid layer on the electrochemical interactions of the

  11. Interaction of Nano-Sized Materials With Polymer Chains in Polymer-Nanocomposite Thin Films-An AFM Perspective

    NASA Astrophysics Data System (ADS)

    Verma, Gaurav; Kaushik, Anupama; Ghosh, Anup K.

    2011-12-01

    Nanocomposite thin films were prepared with polyurethane as a matrix and organically modified clay as a filler. The interfacial interaction between the exfoliated clay nanoplatelets and the polymeric chains has been investigated by using Atomic Force Microscopy (AFM). The nanoclay platelets show a preferential association with the hard domains of polyurethane matrix on the surface of the thin films. The pendant hydroxyl group on the nanoplatelets attract the isocyanate of the polyisocyanate and a urethane group is formed. This leads to the `clouding' and `entwining' of the nanoplatelets by the hard segmental chains. This is the first visual evidence of nanomaterial filler and polymer matrix interaction and it could open up a spectrum of novel property achievements in nanocomposite thin films. Also the understanding of this interaction can lead to more controlled architecture of nanocomposites.

  12. Evaporation characteristics of thin film liquid argon in nano-scale confinement: A molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Hasan, Mohammad Nasim; Shavik, Sheikh Mohammad; Rabbi, Kazi Fazle; Haque, Mominul

    2016-07-01

    Molecular dynamics simulation has been carried out to explore the evaporation characteristics of thin liquid argon film in nano-scale confinement. The present study has been conducted to realize the nano-scale physics of simultaneous evaporation and condensation inside a confined space for a three phase system with particular emphasis on the effect of surface wetting conditions. The simulation domain consisted of two parallel platinum plates; one at the top and another at the bottom. The fluid comprised of liquid argon film at the bottom plate and vapor argon in between liquid argon and upper plate of the domain. Considering hydrophilic and hydrophobic nature of top and bottom surfaces, two different cases have been investigated: (i) Case A: Both top and bottom surfaces are hydrophilic, (ii) Case B: both top and bottom surfaces are hydrophobic. For all cases, equilibrium molecular dynamics (EMD) was performed to reach equilibrium state at 90 K. Then the lower wall was set to four different temperatures such as 110 K, 120 K, 130 K and 140 K to perform non-equilibrium molecular dynamics (NEMD). The variation of temperature and density as well as the variation of system pressure with respect to time were closely monitored for each case. The heat fluxes normal to top and bottom walls were estimated and discussed to illuminate the effectiveness of heat transfer in both hydrophilic and hydrophobic confinement at various boundary temperatures of the bottom plate.

  13. Molecular resolution friction microscopy of Cu phthalocyanine thin films on dolomite (104) in water.

    PubMed

    Nita, Paweł; Pimentel, Carlos; Luo, Feng; Milián-Medina, Begoña; Gierschner, Johannes; Pina, Carlos M; Gnecco, Enrico

    2014-07-21

    The reliability of ultrathin organic layers as active components for molecular electronic devices depends ultimately on an accurate characterization of the layer morphology and ability to withstand mechanical stresses on the nanoscale. To this end, since the molecular layers need to be electrically decoupled using thick insulating substrates, the use of AFM becomes mandatory. Here, we show how friction force microscopy (FFM) in water allows us to identify the orientation of copper(ii)phthalocyanine (CuPc) molecules previously self-assembled on a dolomite (104) mineral surface in ultra-high vacuum. The molecular features observed in the friction images show that the CuPc molecules are stacked in parallel rows with no preferential orientation with respect to the dolomite lattice, while the stacking features resemble well the single CuPc crystal structure. This proves that the substrate induction is low and makes friction force microscopy in water a suitable alternative to more demanding dynamic AFM techniques in ultra-high vacuum.

  14. Thin film production method and apparatus

    DOEpatents

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  15. Rapid identification of areas of interest in thin film materials libraries by combining electrical, optical, X-ray diffraction, and mechanical high-throughput measurements: a case study for the system Ni-Al.

    PubMed

    Thienhaus, S; Naujoks, D; Pfetzing-Micklich, J; König, D; Ludwig, A

    2014-12-08

    The efficient identification of compositional areas of interest in thin film materials systems fabricated by combinatorial deposition methods is essential in combinatorial materials science. We use a combination of compositional screening by EDX together with high-throughput measurements of electrical and optical properties of thin film libraries to determine efficiently the areas of interest in a materials system. Areas of interest are compositions which show distinctive properties. The crystallinity of the thus determined areas is identified by X-ray diffraction. Additionally, by using automated nanoindentation across the materials library, mechanical data of the thin films can be obtained which complements the identification of areas of interest. The feasibility of this approach is demonstrated by using a Ni-Al thin film library as a reference system. The obtained results promise that this approach can be used for the case of ternary and higher order systems.

  16. On the dynamic and static manifestation of molecular absorption in thin films probed by a microcantilever

    SciTech Connect

    Finot, Eric; Fabre, Arnaud; Passian, Ali; Thundat, Thomas

    2014-03-01

    Mechanical resonators shaped like microcantilevers have been demonstrated as a platform for very sensitive detection of chemical and biological analytes. However, its use as an analytical tool will require fundamental understanding of the molecular absorption-induced effects in the static and dynamic sensor response. The effect of absorption-induced surface stress on the microcantilever response is here investigated using palladium hydride formation. It is shown that the resonance and deformation states of the cantilever monitored simultaneously exhibit excellent correlation with the phase of the hydride formation. However, the associated frequency shifts and quasistatic bending are observed to be independent during solid solution phase. Importantly, absorption-induced changes in the elastic parameters of the palladium film are found to play a dominant role in the static and dynamic response. The presented results help in discerning the parameters that control the cantilever response as well as the relationships between these parameters.

  17. Mechanism of Charge Transport in Cobalt and Iron Phthalocyanine Thin Films Grown by Molecular Beam Epitaxy

    SciTech Connect

    Kumar, Arvind; Samanta, Soumen; Singh, Ajay; Debnath, A. K.; Aswal, D. K.; Gupta, S. K.

    2011-12-12

    Cobalt phthalocyanine (CoPc), iron phthalocyanine (FePc) and their composite (CoPc-FePc) films have been grown by molecular beam epitaxy (MBE). Grazing incidence X-ray diffraction (GIXRD) and scanning electron microscope (SEM) studies showed that composite films has better structural ordering compared to individual CoPc and FePc films. The temperature dependence of resistivity (in the temperature range 25 K- 100 K) showed that composite films are metallic, while individual CoPc and FePc films are in the critical regime of metal-to-insulator (M-I) transition The composite films show very high mobility of 110 cm{sup 2} V{sup -1} s{sup -1} at room temperature i.e. nearly two order of magnitude higher compared to pure CoPc and FePc films.

  18. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  19. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  20. Magnetostrictive thin films for microwave spintronics.

    PubMed

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  1. Magnetostrictive thin films for microwave spintronics

    PubMed Central

    Parkes, D. E.; Shelford, L. R.; Wadley, P.; Holý, V.; Wang, M.; Hindmarch, A. T.; van der Laan, G.; Campion, R. P.; Edmonds, K. W.; Cavill, S. A.; Rushforth, A. W.

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications. PMID:23860685

  2. 3-D photo-patterning of refractive index structures in photosensitive thin film materials

    DOEpatents

    Potter, Jr., Barrett George; Potter, Kelly Simmons

    2002-01-01

    A method of making a three-dimensional refractive index structure in a photosensitive material using photo-patterning. The wavelengths at which a photosensitive material exhibits a change in refractive index upon exposure to optical radiation is first determined and then a portion of the surface of the photosensitive material is optically irradiated at a wavelength at which the photosensitive material exhibits a change in refractive index using a designed illumination system to produce a three-dimensional refractive index structure. The illumination system can be a micro-lenslet array, a macroscopic refractive lens array, or a binary optic phase mask. The method is a single-step, direct-write procedure to produce a designed refractive index structure.

  3. Phase Formation and Oxidation Behavior at 500 °C in a Ni-Co-Al Thin-Film Materials Library.

    PubMed

    Naujoks, Dennis; Richert, Jerome; Decker, Peer; Weiser, Martin; Virtanen, Sannakaisa; Ludwig, Alfred

    2016-09-12

    The complete ternary system Ni-Co-Al was fabricated as a thin film materials library by combinatorial magnetron sputtering and was annealed subsequently in several steps in Ar and under atmospheric conditions at 500 °C. Ni-Co-Al is the base system for both Ni- and Co-based superalloys. Therefore, the phases occurring in this system and their oxidation behavior is of high interest. The Ni-Co-Al materials library was investigated using high-throughput characterization methods such as optical measurements, resistance screening, automated EDX, automated XRD, and XPS. From the obtained data a thin film phase diagram for the Ni-Co-Al system in its state after annealing at 500 °C in air was established. Furthermore, a surface oxide composition map of the full Ni-Co-Al system for oxidation at 500 °C was concluded. As a result, it could be shown that at 500 °C an amount of 10 at. % Al is necessary for a Ni-Co-Al thin film to produce a protective Al-oxide scale.

  4. Fundamental Studies of the Mechanical Behavior of Microelectronic Thin Film Materials

    DTIC Science & Technology

    1991-01-01

    Processes, edited by R . A . Levy (Klewer, Dordrecht, Netherlands, 1989), Chap. 6. 3. W. Kern, G . L . Schnable, and A . W. Fisher, "CVD glass films for... surface than deposited polysilicon and is produced at temperatures compatible with glass substrates, making it a good material for the active region of thin...Crystalline Materials, second edition (Clarendon, Oxford, 1979), Chap. 7. 3. G . L . Olson and J. A . Roth, "Kinetics of solid phase crystallization in

  5. Dye sensitized solar cell applications of CdTiO{sub 3}–TiO{sub 2} composite thin films deposited from single molecular complex

    SciTech Connect

    Ehsan, Muhammad Ali; Khaledi, Hamid; Pandikumar, Alagarsamy; Huang, Nay Ming; Arifin, Zainudin; Mazhar, Muhammad

    2015-10-15

    A heterobimetallic complex [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO{sub 3}–TiO{sub 2} composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity, phase identification and chemical composition of microspherical architectured CdTiO{sub 3}–TiO{sub 2} composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application. - Graphical abstarct: Microspherical designed CdTiO{sub 3}–TiO{sub 2} composite oxides photoanode film has been fabricated from single source precursor [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF via aerosol assisted chemical vapor deposition technique for dye sensitized solar cell application. - Highlights: • Synthesis and characterization of a heterobimetallic Cd–Ti complex. • Fabrication of CdTiO{sub 3}–TiO{sub 2} thin film photoelectrode. • Application as dye sensitized photoanode for solar application.

  6. Dye sensitized solar cell applications of CdTiO3-TiO2 composite thin films deposited from single molecular complex

    NASA Astrophysics Data System (ADS)

    Ehsan, Muhammad Ali; Khaledi, Hamid; Pandikumar, Alagarsamy; Huang, Nay Ming; Arifin, Zainudin; Mazhar, Muhammad

    2015-10-01

    A heterobimetallic complex [Cd2Ti4(μ-O)6(TFA)8(THF)6]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO3-TiO2 composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity, phase identification and chemical composition of microspherical architectured CdTiO3-TiO2 composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application.

  7. Growth and characterization of polymer thin films grown using molecular layer deposition with heterobifunctional precursors

    NASA Astrophysics Data System (ADS)

    Gibbs, Zachary Michael Conway

    In this work, growth of thin polymer films using molecular layer deposition with heterobifunctional precursors is investigated. Several growth phenomena are observed including: loss or gain of reactive sites as a result of precursor reactivity or vapor pressure; precursor diffusion and reaction within the porous polymer film; and crosslinking. Reactions were investigated using quartz crystal microbalance, Fourier transform infrared spectroscopy, and various ex situ techniques. Reactions involving 4-azidophenylisothiocyanate and 4-aminobenzonitrile were shown to stop growth after only a few cycles which is attributed to a loss in reactive sites which was modeled by an exponentially decaying growth rate. Growth of 4-carboxyphenylisothiocyanate with TMA and water was investigated as well. Active site multiplication as a result of the trifunctionality of the TMA molecule was proposed to explain the significantly higher growth rate for TMA/CI films. TMA/H2O/CI films showed the ability to crosslink through aluminum hydroxyl condensation reactions. Upon increasing the reaction temperature, reactant diffusion was observed in the form of mass removal upon TMA exposure. This same phenomena is thought to be occurring in films grown using Diels-Alder reactions in the third section of this thesis. These films showed a strong growth rate dependence upon reactant purge time and growth temperature. FTIR seems to weakly support Diels-Alder reaction, but it appears that the primary film growth mechanism is through CVD-like diffusion and condensation reactions.

  8. Molecular dynamics simulation of nano-indentation on Ti-V multilayered thin films

    NASA Astrophysics Data System (ADS)

    Feng, Chao; Peng, Xianghe; Fu, Tao; Zhao, Yinbo; Huang, Cheng; Wang, Zhongchang

    2017-03-01

    We developed a second nearest-neighbor modified embedded-atom method potential for binary Ti-V system. The potential parameters were identified by fitting the lattice parameter, cohesive energy and elastic constants of CsCl-type TiV, and further validated by reproducing the fundamental physical and mechanical properties of Ti-V systems with other crystal structures. In addition, we also performed molecular dynamics simulations of nano-indentation processes of pure Ti film, pure V film, and two kinds of four-layer Ti-V films, V-Ti-V-Ti and Ti-V-Ti-V. We found that the indentation force-depth curve for the pure V film turns flat at an indentation depth of 2.8 nm, where a prismatic loop was observed. Such prismatic loop is not found in the V/Ti/V/Ti multilayer because the thickness of each layer is insufficient for the formation of such prismatic loops, which accounts for the increase of stress in the multilayer.

  9. Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

    NASA Technical Reports Server (NTRS)

    Sarkisov, S.; Curley, M.; Williams, E. K.; Wilkosz, A.; Ila, D.; Poker, D. B.; Hensley, D. K.; Smith, C.; Banks, C.; Penn, B.; Clark, R.

    1998-01-01

    Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

  10. Molecular Processes Underlying the Structure and Assembly of Thin Films and Nanoparticles at Complex interfaces

    SciTech Connect

    Richmond, Geraldine

    2016-06-03

    Since 1995 we have pursued a number of different studies that are quite diverse in nature but with the common theme of using novel laser based methods to study important processes at buried interfaces. Studies of Corrosion, Passivation on n-GaAs(100)Methanol Photoelectrochemical Cell In these studies we have used picosecond photoluminescence and electrochemical studies to understand the GaAs/methanol interface. In our most extensive set of studies we conducted photo-illumination and XPS experiments to understand the chemistry occurring in the GaAs/methanol photoelectrochemical during photoexcitation. An important distinction between photocorrosion and photoetching of GaAs is elucidated by these studies. The dependence of GaAs photocorrosion on light intensity has been explored to better understand intrinsic differences between the lamplight studies and the picosecond photoluminescence studies. The effect of coating the GaAs with a sulfide layer prior to immersion in the cell has also been explored. This last result has led us to examine n-GaAs as a function of crystallographic orientation after exposure to aqueous Na2S containing solutions has been studied as a function of crystallographic orientation of the GaAs surface. The (100) and (110) surfaces are relatively similar, with significant amounts of As-S species present at the interface. The (111)B surface lacks this constituent, but shows significant amounts of metallic As. The XPS results have been correlated with the results of previous photocorrosion and passivation studies conducted in a photoelectrochemical cell. The studies indicate that the metallic As present at (111)B surface contributes strongly to the large surface recombination velocity found there, and to the inability of Na2S to passivate the (111)B surface. SAMS Under Water: Water Molecular Structure and Bonding at Hydrophobic Surfaces In these DOE sponsored studies we have been interested in learning the similarities and

  11. Atomic Layer Epitaxy Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization

    DTIC Science & Technology

    1991-06-01

    carbide, SiH 2 Cb1, 14PRC CD adsorbtion , desorption 01.PIECD J7. S(CURITY CLASSI;ICATION 1S SECURITY C.AS’IfICAIION 19. SECURITY CLASSIFICATION 20...the hydrogen atoms break away from the molecule as the SiH 2 CI2 nears or is adsorbed onto the heated substrate and a monolayer of Si having a...terminating layer formed by the remaining chlorine atoms now resides on the Si surface. This molecular surface configuration now prevents the adsorbtion of

  12. The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Brooks, Charles M.

    Included in this work is a range of studies on films of homoeptaxial and heteroepitaxial films of SrTiO3 and the first reported phase-pure films of LuFe2O4. We report the structural properties of homoepitaxial (100) SrTiO3 films grown by reactive molecular-beam epitaxy (MBE). The lattice spacing and x-ray diffraction (XRD) rocking curves of stoichiometric MBEgrown SrTiO3 films are indistinguishable from the underlying SrTiO3 substrates. The effect of off-stoichiometry for both strontium-rich and strontium-poor compositions results in lattice expansion with significant changes to the shuttered reflection high-energy electron diffraction oscillations, XRD, film microstructure, and thermal conductivity. Up to an 80% reduction in Sr(1+x)TiO3 film thermal conductivity is measured for x = -0.1 to 0.5. Significant reduction, from 11.5 to ˜2 W˙m-1K-1, occurs through the formation of Ruddlesden-Popper planar faults. The ability to deposit films with a reduction in thermal conductivity is applicable to thermal barrier coatings and thermoelectrics. Scanning transmission electron microscopy is used to examine the formation of Ruddlesden-Popper planar faults in films with strontium excess. We also show that the band gap of SrTiO3 can be altered by >10% (0.3 eV) by using experimentally realizable biaxial strains providing a new means to accomplish band gap engineering of SrTiO3 and related perovskites. Such band gap manipulation is relevant to applications in solar cells water splitting, transparent conducting oxides, superconductivity, two-dimensional electron liquids, and other emerging oxide electronics. This work also presents the adsorption-controlled growth of single-phase (0001)-oriented epitaxial films of charge ordered multiferroic, LuFe2O4, on (111) MgAl2O4, (111) MgO, and (0001) 6H-SiC substrates in an iron-rich environment at pressures and temperatures where excess iron desorbs from the film surface during growth. Scanning transmission electron microscopy reveals

  13. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  14. The effect of Ta interface on the crystallization of amorphous phase change material thin films

    SciTech Connect

    Ghezzi, G. E.; Noé, P. Marra, M.; Sabbione, C.; Fillot, F.; Bernier, N.; Ferrand, J.; Maîtrejean, S.; Hippert, F.

    2014-06-02

    The crystallization of amorphous GeTe and Ge{sub 2}Sb{sub 2}Te{sub 5} phase change material films, with thickness between 10 and 100 nm, sandwiched between either Ta or SiO{sub 2} layers, was investigated by optical reflectivity. Ta cladding layers were found to increase the crystallization temperature, even for films as thick as 100 nm. X-Ray diffraction investigations of crystallized GeTe films showed a very weak texture in Ta cladded films, in contrast with the strong texture observed for SiO{sub 2} cladding layers. This study shows that crystallization mechanism of phase change materials can be highly impacted by interface effects, even for relatively thick films.

  15. Bamboo (Neosinocalamus affinis)-based thin film, a novel biomass material with high performances.

    PubMed

    Song, Fei; Xu, Chen; Bao, Wen-Yi; Wang, Xiu-Li; Wang, Yu-Zhong

    2015-03-30

    Exploration of biomass based materials to replace conventional petroleum based ones has been a trend in recent decades. In this work, bamboo (Neosinocalamus affinis) with abundant resources was used for the first time to prepare films in the presence of cellulose. The effects of weight ratio of bamboo/cellulose on the appearances and properties of the films were investigated. It was confirmed there existed strong interactions between bamboo and cellulose, which were favorable to formation of homogeneous structure of blend films. Particularly, the presence of bamboo could improve the surface hydrophobicity, water resistance and thermal stability of blend films, and the films possessed an excellent oxygen barrier property, compared with generally used commercial packaging films. The bamboo biomass, therefore, is successfully used to create a new film material with a good application prospect in the fields of packaging, coating, and food industry.

  16. Laser Deposition of Polymer Nanocomposite Thin Films and Hard Materials and Their Optical Characterization

    DTIC Science & Technology

    2013-12-05

    results in hexagonal symmetry (s.g. P63/m). This material is typically prepared by low temperature techniques (and is the phase synthesized ...experiments were conducted to evaluate the response of the films to ammonia , hazardous air pollutant. The example of the differential optical absorption...reagent with nano-particles under exposure to ammonia at a concentration of ~ 10000 ppm transmitted 100 times less light on both sides of the 605

  17. Polar self-assembled thin films for non-linear optical materials

    DOEpatents

    Yang, XiaoGuang; Swanson, Basil I.; Li, DeQuan

    2000-01-01

    The design and synthesis of a family of calix[4]arene-based nonlinear optical (NLO) chromophores are discussed. The calixarene chromophores are macrocyclic compounds consisting of four simple D-.pi.-A units bridged by methylene groups. These molecules were synthesized such that four D-.pi.-A units of the calix[4]arene were aligned along the same direction with the calixarene in a cone conformation. These nonlinear optical super-chromophores were subsequently fabricated into covalently bound self-assembled monolayers on the surfaces of fused silica and silicon. Spectroscopic second harmonic generation (SHG) measurements were carried out to determine the absolute value of the dominant element of the second-order nonlinear susceptibility, d.sub.33, and the average molecular alignment, .PSI.. A value of d.sub.33 =60 pm/V at a fundamental wavelength of 890 nm, and .PSI..about.36.degree. was found with respect to the surface normal.

  18. The influence of oxygen partial pressure on material properties of Eu3+-doped Y2O2S thin film deposited by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Ali, A. G.; Dejene, B. F.; Swart, H. C.

    2016-01-01

    Eu3+-doping has been of interest to improve the luminescent characteristics of thin-film phosphors. Y2O2S:Eu3+ films have been grown on Si (100) substrates by using a Pulsed Laser Deposition technique. The thin films grown under different oxygen deposition pressure conditions have been characterized using structural and luminescent measurements. The X-ray diffraction patterns showed mixed phases of cubic and hexagonal crystal structures. As the oxygen partial pressure increased, the crystallinity of the films improved. Further increase of the O2 pressure to 140 mtorr reduced the crystallinity of the film. Similarly, both scanning electron microscopy and Atomic Force Microscopy confirmed that an increase in O2 pressure affected the morphology of the films. The average band gap of the films calculated from diffuse reflectance spectra using the Kubelka-Munk function was about 4.75 eV. The photoluminescence measurements indicated red emission of Y2O2S:Eu3+ thin films with the most intense peak appearing at 619 nm, which is assigned to the 5D0-7F2 transition of Eu3+. This most intense peak was totally quenched at higher O2 pressures. This phosphor may be a promising material for applications in the flat panel displays.

  19. A multi-detector, digitizer based neutron depth profiling device for characterizing thin film materials

    SciTech Connect

    Mulligan, P. L.; Cao, L. R.; Turkoglu, D.

    2012-07-15

    Neutron depth profiling (NDP) is a mature, nondestructive technique used to characterize the concentration of certain light isotopes in a material as a function of depth by measuring the residual energy of charged particles in neutron induced reactions. Historically, NDP has been performed using a single detector, resulting in low intrinsic detection efficiency, and limiting the technique largely to high flux research reactors. In this work, we describe a new NDP instrument design with higher detection efficiency by way of spectrum summing across multiple detectors. Such a design is capable of acquiring a statistically significant charged particle spectrum at facilities limited in neutron flux and operation time.

  20. A multi-detector, digitizer based neutron depth profiling device for characterizing thin film materials

    NASA Astrophysics Data System (ADS)

    Mulligan, P. L.; Cao, L. R.; Turkoglu, D.

    2012-07-01

    Neutron depth profiling (NDP) is a mature, nondestructive technique used to characterize the concentration of certain light isotopes in a material as a function of depth by measuring the residual energy of charged particles in neutron induced reactions. Historically, NDP has been performed using a single detector, resulting in low intrinsic detection efficiency, and limiting the technique largely to high flux research reactors. In this work, we describe a new NDP instrument design with higher detection efficiency by way of spectrum summing across multiple detectors. Such a design is capable of acquiring a statistically significant charged particle spectrum at facilities limited in neutron flux and operation time.

  1. A multi-detector, digitizer based neutron depth profiling device for characterizing thin film materials.

    PubMed

    Mulligan, P L; Cao, L R; Turkoglu, D

    2012-07-01

    Neutron depth profiling (NDP) is a mature, nondestructive technique used to characterize the concentration of certain light isotopes in a material as a function of depth by measuring the residual energy of charged particles in neutron induced reactions. Historically, NDP has been performed using a single detector, resulting in low intrinsic detection efficiency, and limiting the technique largely to high flux research reactors. In this work, we describe a new NDP instrument design with higher detection efficiency by way of spectrum summing across multiple detectors. Such a design is capable of acquiring a statistically significant charged particle spectrum at facilities limited in neutron flux and operation time.

  2. Effects of anode materials on resistive characteristics of NiO thin films

    SciTech Connect

    Jia, Ze; Wang, Linkai; Zhang, Naiwen; Ren, Tianling; Liou, Juin J.

    2013-01-28

    This letter shows that the NiO-based structure with different anodes has different resistive switching properties. A conical conductive filament (CF) model is proposed for oxygen vacancies distributed in NiO films. Modeling analysis reveals much larger dissolution velocity of CF near anodes than near cathodes during the reset process. Different interfaces shown in Auger electron spectroscopy can be bound with the model to reveal that CF is dissolved in the structure with Pt or Au as anodes, while CF remains constant if the anode material is Ti or Al, which can explain whether switching properties occur in the specific NiO-based structures.

  3. Research on polycrystalline thin film submodules based on CuInSe sub 2 materials

    SciTech Connect

    Catalano, A.; Arya, R.; Carr, L.; Fieselmann, B.; Lommasson, T.; Podlesny, R.; Russell, L.; Skibo, S.; Rothwarf, A.; Birkmire, R. )

    1992-05-01

    This report describes progress during the first year of a three-year research program to develop 12%-efficient CuInSe{sub 2} (CIS) submodules with area greater than 900 cm{sup 2}. To meet this objective, the program was divided into five tasks: (1) windows, contacts, substrates; (2) absorber material; (3) device structure; (4) submodule design and encapsulation; and (5) process optimization. In the first year of the program, work was concentrated on the first three tasks with an objective to demonstrate a 9%-efficient CIS solar cell. 7 refs.

  4. Reliability and engineering sciences area. Materials research: Single junction thin film

    NASA Technical Reports Server (NTRS)

    1986-01-01

    A test bench was designed and fabricated for the purpose of improving control of hot-spot test accuracy. Electrochemical corrosion research focused on corrosion mechanisms to which both crystalline and a-Si modules may be subjected in central station applications. A variety of cells and several designs were subjected to accelerated stress tests. Humiditiy degradation rates were determined and key electrochemical failure mechanisms were identified. Software was developed for the prediction of power loss resulting from open circuits in an array field of a-Si modules. Failure analysis was continued on the four ARCO Solar Genesis modules. The interactions of water on the silicon module was examined. An autocatalytic photooxidation model was proposed. The reliability and durability of bonding materials and electrical insulation were also studied.

  5. Measurement of the thermoelectric properties of bulk and thin film materials

    SciTech Connect

    Danielson, L.

    1996-03-01

    The figure-of-merit (Z) of a thermoelectric material is defined as Z = S{sup 2}/{rho}k, where S is the Seebeck coefficient, {rho} is the electrical resistivity, and k is the thermal conductivity. Since Z is composed of three components, it is sensitive to measurement errors in each of the components. For example, a Seebeck coefficient measurement which is only 17% high combined with electrical resistivity and thermal conductivity measurements which are 17% too low will result in a Z value which is double the correct value. It is therefore important to observe correct technique when performing measurements of S, {rho}, and k; and to recognize the limitations of the measurements. The purpose of the course is to address some of those issues in order to increase the accuracy of the thermoelectric measurements.

  6. Polarization holographic recording in thin films of pure azopolymer and azopolymer based hybrid materials

    NASA Astrophysics Data System (ADS)

    Berberova, N.; Daskalova, D.; Strijkova, V.; Kostadinova, D.; Nazarova, D.; Nedelchev, L.; Stoykova, E.; Marinova, V.; Chi, C. H.; Lin, S. H.

    2017-02-01

    Recently, a birefringence enhancement effect was observed in azopolymers doped with various nanoparticles. The paper presents comparison between the parameters of polarization holographic gratings recorded in a pure azopolymer PAZO (Poly[1-[4-(3-carboxy-4-hydroxyphenylazo) benzenesulfonamido]-1,2-ethanediyl, sodium salt]) and in a hybrid PAZO-based organic/inorganic material with incorporated ZnO nanoparticles of size less than 50 nm. Laser emitting at 491 nm is used for the holographic recording. Along with the anisotropic grating in the volume of the media, surface relief is also formed. Gratings with different spatial frequencies are obtained by varying the recording angle. The time dependence of the diffraction efficiency is probed at 635 nm and the height of the relief gratings is determined by AFM. Our results indicate that both the diffraction efficiency and the height of the surface relief for the hybrid samples are enhanced with respect to the pure azopolymer films.

  7. Characterization of Thin Film Materials using SCAN meta-GGA, an Accurate Nonempirical Density Functional

    NASA Astrophysics Data System (ADS)

    Buda, I. G.; Lane, C.; Barbiellini, B.; Ruzsinszky, A.; Sun, J.; Bansil, A.

    2017-03-01

    We discuss self-consistently obtained ground-state electronic properties of monolayers of graphene and a number of ’beyond graphene’ compounds, including films of transition-metal dichalcogenides (TMDs), using the recently proposed strongly constrained and appropriately normed (SCAN) meta-generalized gradient approximation (meta-GGA) to the density functional theory. The SCAN meta-GGA results are compared with those based on the local density approximation (LDA) as well as the generalized gradient approximation (GGA). As expected, the GGA yields expanded lattices and softened bonds in relation to the LDA, but the SCAN meta-GGA systematically improves the agreement with experiment. Our study suggests the efficacy of the SCAN functional for accurate modeling of electronic structures of layered materials in high-throughput calculations more generally.

  8. Characterization of Thin Film Materials using SCAN meta-GGA, an Accurate Nonempirical Density Functional

    PubMed Central

    Buda, I. G.; Lane, C.; Barbiellini, B.; Ruzsinszky, A.; Sun, J.; Bansil, A.

    2017-01-01

    We discuss self-consistently obtained ground-state electronic properties of monolayers of graphene and a number of ’beyond graphene’ compounds, including films of transition-metal dichalcogenides (TMDs), using the recently proposed strongly constrained and appropriately normed (SCAN) meta-generalized gradient approximation (meta-GGA) to the density functional theory. The SCAN meta-GGA results are compared with those based on the local density approximation (LDA) as well as the generalized gradient approximation (GGA). As expected, the GGA yields expanded lattices and softened bonds in relation to the LDA, but the SCAN meta-GGA systematically improves the agreement with experiment. Our study suggests the efficacy of the SCAN functional for accurate modeling of electronic structures of layered materials in high-throughput calculations more generally. PMID:28333131

  9. Effect of capping material on interfacial ferromagnetism in FeRh thin films

    SciTech Connect

    Baldasseroni, C.; Pálsson, G. K.; Nemsak, S.; Fadley, C. S.; Bordel, C.; Valencia, S.; Unal, A. A.; Kronast, F.; Borchers, J. A.; Maranville, B. B.; Hellman, F.

    2014-01-28

    The role of the capping material in stabilizing a thin ferromagnetic layer at the interface between a FeRh film and cap in the nominally antiferromagnetic phase at room temperature was studied by x-ray magnetic circular dichroism in photoemission electron microscopy and polarized neutron reflectivity. These techniques were used to determine the presence or absence of interfacial ferromagnetism (FM) in films capped with different oxides and metals. Chemically stable oxide caps do not generate any interfacial FM while the effect of metallic caps depends on the element, showing that interfacial FM is due to metallic interdiffusion and the formation of a ternary alloy with a modified antiferromagnetic to ferromagnetic transition temperature.

  10. Chiral atomically thin films.

    PubMed

    Kim, Cheol-Joo; Sánchez-Castillo, A; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm(-1)) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  11. Chiral atomically thin films

    NASA Astrophysics Data System (ADS)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  12. Thin films and assemblies of photosensitive membrane proteins and colloidal nanocrystals for engineering of hybrid materials with advanced properties.

    PubMed

    Zaitsev, Sergei Yu; Solovyeva, Daria O; Nabiev, Igor

    2012-11-15

    The development and study of nano-bio hybrid materials engineered from membrane proteins (the key functional elements of various biomembranes) and nanoheterostructures (inorganic colloidal nanoparticles, transparent electrodes, and films) is a rapidly growing field at the interface of materials and life sciences. The mainspring of the development of bioinspired materials and devices is the fact that biological evolution has solved many problems similar to those that humans are attempting to solve in the field of light-harvesting and energy-transferring inorganic compounds. Along this way, bioelectronics and biophotonics have shown considerable promise. A number of proteins have been explored in terms of bioelectronic device applications, but bacteriorhodopsin (bR, a photosensitive membrane protein from purple membranes of the bacterium Halobacterium salinarum) and bacterial photosynthetic reaction centres have received the most attention. The energy harvesting in plants has a maximum efficiency of 5%, whereas bR, in the absence of a specific light-harvesting system, allows bacteria to utilize only 0.1-0.5% of the solar light. Recent nano-bioengineering approaches employing colloidal semiconductor and metal nanoparticles conjugated with biosystems permit the enhancement of the light-harvesting capacity of photosensitive proteins, thus providing a strong impetus to protein-based device optimisation. Fabrication of ultrathin and highly oriented films from biological membranes and photosensitive proteins is the key task for prospective bioelectronic and biophotonic applications. In this review, the main advances in techniques of preparation of such films are analyzed. Comparison of the techniques for obtaining thin films leads to the conclusion that the homogeneity and orientation of biomembrane fragments or proteins in these films depend on the method of their fabrication and increase in the following order: electrophoretic sedimentation < Langmuir-Blodgett and

  13. Defect chemistry and chalcogen diffusion in thin-film Cu{sub 2}ZnSnSe{sub 4} materials

    SciTech Connect

    Harvey, Steven P.; Repins, Ingrid; Teeter, Glenn

    2015-02-21

    Selenium diffusion in polycrystalline thin-film Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSe) on molybdenum-coated soda-lime glass substrates was investigated by in situ monitoring of the molybdenum back-contact resistance during high-temperature selenization treatments. In these measurements, selenium diffusion through the CZTSe layer results in conversion of the molybdenum layer to MoSe{sub 2}, increasing the sheet resistance of the film stack. By monitoring the rate of MoSe{sub 2} formation as a function of annealing temperature, an activation energy of 0.5 ± 0.1 eV has been measured for selenium diffusion in CZTSe. The partial pressure dependence of chalcogen diffusion suggests that chalcogen vacancies are not the defect controlling chalcogen diffusion in thin-film CZTSe.

  14. Terahertz surface emission from Cu2ZnSnSe4 thin film photovoltaic material excited by femtosecond laser pulses

    NASA Astrophysics Data System (ADS)

    Zhao, Zhenyu; Niehues, Gudrun; Funkner, Stefan; Estacio, Elmer; Han, Qifeng; Yamamoto, Kohji; Zhang, Jingtao; Shi, Wangzhou; Guo, Qixin; Tani, Masahiko

    2014-12-01

    We observed efficient terahertz (THz) emission from sol-gel grown Cu2ZnSnSe4 (CZTSe) thin films using THz time domain spectroscopy technique. The THz emission bandwidth exceeds 2 THz with a dynamic range of 20 dB in the amplitude spectrum. The THz emission amplitude from CZTSe is found to be independent of external magnetic fields. Comparing the polarity of THz emission waveforms of CZTSe and GaAs, we suggest that the acceleration of photo-carriers in the surface accumulation layer of CZTSe is the dominant mechanism of radiation emission. Optical excitation fluence dependence measurements show that the saturation fluence of the CZTSe thin film reaches 1.48 μJ/cm2.

  15. Defect chemistry and chalcogen diffusion in thin-film Cu2ZnSnSe4 materials

    NASA Astrophysics Data System (ADS)

    Harvey, Steven P.; Repins, Ingrid; Teeter, Glenn

    2015-02-01

    Selenium diffusion in polycrystalline thin-film Cu2ZnSn(S,Se)4 (CZTSe) on molybdenum-coated soda-lime glass substrates was investigated by in situ monitoring of the molybdenum back-contact resistance during high-temperature selenization treatments. In these measurements, selenium diffusion through the CZTSe layer results in conversion of the molybdenum layer to MoSe2, increasing the sheet resistance of the film stack. By monitoring the rate of MoSe2 formation as a function of annealing temperature, an activation energy of 0.5 ± 0.1 eV has been measured for selenium diffusion in CZTSe. The partial pressure dependence of chalcogen diffusion suggests that chalcogen vacancies are not the defect controlling chalcogen diffusion in thin-film CZTSe.

  16. Fabrication and characterization methods for growth of CZTS as a promising material for thin film solar cells

    NASA Astrophysics Data System (ADS)

    Emrani, Amin

    Current research trends are moving towards earth-abundant and low toxicity materials. Cu2ZnSnS4 (CZTS), which consists not only earth-abundant and non-toxic elemental constituents, but also possesses a nearly optimum band gap of 1.5 eV and a high absorption coefficient, has the potential to be a leading material for large scale generation of solar energy. Although theoretical calculations estimated the feasibility of achieving an efficiency between 30 to 40 %, for CZTS solar cells, unfortunately, there is no standard approach to fabricate CZTS cells to reach an efficiency even close to these numbers. In this dissertation, several potential methods from vacuum based techniques such as sputtering to a new solution-based process to deposit CZTS films have been explored, studied and developed. To further improve the CZTS solar cell performance, other layers essential for CZTS solar cells have also been analyzed and optimized. Lastly, the performance and efficiencies of the final integrated cells are presented. First, we report a two-step process with sputtering of elemental precursors followed by sulfurization in dilute H2S. Structural and optical properties of CZTS thin films at various temperatures are studied. The CZTS films formed at 550°C exhibited a compact void-free structure yields the highest efficiency of 5.75%. Since long duration annealing processes are not practical for industry and result in the formation of voids due to the sublimation of secondary phases, fast annealing under sulfur vapor atmosphere has further been investigated. Since the H2S annealing is cleaner and more controllable than dealing with sulfur vapor pressure. We report a two-step process with sputtering of elemental precursors followed by fast sulfurization in dilute H2S. The electrical characteristics and the efficiencies of the respective solar cells were analyzed and compared. The films annealed at 580°C for 30 minutes exhibited the highest efficiency of 3.8%. Another approach to

  17. Optical Characterization of Pulse Laser Deposition of Thin Films of Hard Materials Using RHEED and AFM Techniques

    DTIC Science & Technology

    2011-12-20

    University, New Orleans, LA 70122 ABSTRACT Epitaxial thin films of Barium Ferrite (BaFeO3) have been fabricated by the pulsed laser deposition...the Coercivity, crystalline orientation, and grain shape and size is presented. 1. INTRODUCTION Barium ferrite powder was selected in this...published. In the presently conducted investigation, FMR absorption was studied in the case of six fine- powder samples of barium ferrite

  18. Large-area monocrystalline silicon thin films by annealing of macroporous arrays: Understanding and tackling defects in the material

    NASA Astrophysics Data System (ADS)

    Depauw, Valérie; Gordon, Ivan; Beaucarne, Guy; Poortmans, Jef; Mertens, Robert; Celis, Jean-Pierre

    2009-08-01

    A concept that could provide a thin monocrystalline-silicon absorber layer without resorting to the expensive step of epitaxy would be very appealing for reducing the cost of solar cells. The empty-space-in-silicon technique by which thin films of silicon can be formed by reorganization of regular arrays of cylindrical voids at high temperature may be such a concept if the high quality of the thin film could be ensured on centimeter-large areas. While previous works mainly investigated the influence of the porous array on the final structure, this work focuses on the practical aspects of the high-temperature step and its application to large areas. An insight into the defects that may form is given and the origin of these defects is discussed, providing recommendations on how to avoid them. Surface roughening, pitting, formation of holes, and silicon pillars could be attributed to the nonuniform reactions between Si, SiO2, and SiO. Hydrogen atmospheres are therefore preferred for reorganization of macroporous arrays. Argon atmospheres, however, may provide high-quality silicon thin films as well, possibly even more easily transferable, as long as annealing is performed in controlled, clean, and oxygen-free conditions. Our experiments on large areas also highlight the importance of kinetics, which had not been considered up to now and which will require further understanding to ensure a complete reorganization over any wafer area.

  19. Thin-film metal hydrides.

    PubMed

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  20. Carbon Nanotube Thin-Film Antennas.

    PubMed

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of <10 ohm/sq is needed to achieve a 10 dB return loss in the unbalanced antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  1. Research on Advanced Thin Film Batteries

    SciTech Connect

    Goldner, Ronald B.

    2003-11-24

    During the past 7 years, the Tufts group has been carrying out research on advanced thin film batteries composed of a thin film LiCo02 cathode (positive electrode), a thin film LiPON (lithium phosphorous oxynitride) solid electrolyte, and a thin film graphitic carbon anode (negative electrode), under grant DE FG02-95ER14578. Prior to 1997, the research had been using an rfsputter deposition process for LiCoOi and LiPON and an electron beam evaporation or a controlled anode arc evaporation method for depositing the carbon layer. The pre-1997 work led to the deposition of a single layer cell that was successfully cycled for more than 400 times [1,2] and the research also led to the deposition of a monolithic double-cell 7 volt battery that was cycled for more than 15 times [3]. Since 1997, the research has been concerned primarily with developing a research-worthy and, possibly, a production-worthy, thin film deposition process, termed IBAD (ion beam assisted deposition) for depositing each ofthe electrodes and the electrolyte of a completely inorganic solid thin film battery. The main focus has been on depositing three materials - graphitic carbon as the negative electrode (anode), lithium cobalt oxide (nominally LiCoCb) as the positive electrode (cathode), and lithium phosphorus oxynitride (LiPON) as the electrolyte. Since 1998, carbon, LiCoOa, and LiPON films have been deposited using the IBAD process with the following results.

  2. An attempt to correlate surface physics with chemical properties: molecular beam and Kelvin probe investigations of Ce1-xZrxO2 thin films.

    PubMed

    Kolekar, Sadhu K; Dubey, Anjani; Date, Kalyani S; Datar, Suwarna; Gopinath, Chinnakonda S

    2016-10-05

    What is the correlation between physical properties of the surfaces (such as surface potential, electronic nature of the surface), and chemical and catalysis properties (such as chemisorption, sticking probability of surface)? An attempt has been made to explore any correlation that might exist between the physical and chemical properties of thin film surfaces. Kelvin probe microscopy (KPM) and the molecular beam (MB) methods were employed to carry out the surface potential, and oxygen adsorption and oxygen storage capacity (OSC) measurements on Ce1-xZrxO2 thin films. A sol-gel synthesis procedure and spin-coating deposition method have been applied to make continuous nanocrystalline Ce1-xZrxO2 (x = 0-1) (CZ) thin films with uniform thickness (35-50 nm); however, surface roughness and porosity inherently changes with CZ composition. MB studies of O2 adsorption on CZ reveal high OSC for Ce0.9Zr0.1O2, which also exhibits highly porous and significantly rough surface characteristics. The surface potential observed from KPM studies varied between 30 and 80 mV, with Ce-rich compositions exhibiting the highest surface potential. Surface potential shows large changes after reduction or oxidation of the CZ film demonstrating the influence of Ce(3+)/Ce(4+) on surface potential, which is also a key to catalytic activity for ceria-based catalysts. The surface potential measured from KPM and the OSC measured from MB vary linearly and they depend on the Ce(3+)/Ce(4+) ratio. More and detailed studies are suggested to arrive at a correlation between the physical and chemical properties of the surfaces.

  3. Polycrystalline Thin-Film Photovoltaic Technologies: Progress and Technical Issues

    SciTech Connect

    Ullal, H. S.

    2004-08-01

    Polycrystalline thin-film materials based on copper indium diselenide (CuInSe2, CIS) and cadmium telluride (CdTe) are promising thin-film solar cells for various power and specialty applications. Impressive results have been obtained in the past few years for both thin-film copper indium gallium diselenide (CIGS) solar cells and thin-film CdTe solar cells. NCPV/NREL scientists have achieved world-record, total-area efficiencies of 19.3% for a thin-film CIGS solar cell and 16.5% for thin-film CdTe solar cell. A number of technical R&D issues related to CIS and CdTe have been identified. Thin-film power module efficiencies up to 13.4% has been achieved thus far. Tremendous progress has been made in the technology development for module fabrication, and multi-megawatt manufacturing facilities are coming on line with expansion plans in the next few years. Several 40-480 kW polycrystalline thin-film, grid-connected PV arrays have been deployed worldwide. Hot and humid testing is also under way to validate the long-term reliability of these emerging thin-film power products. The U.S. thin-film production (amorphous silicon[a-Si], CIS, CdTe) is expected to exceed 50 MW by the end of 2005.

  4. Thin film temperature sensor

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  5. Detection of charge storage on molecular thin films of tris(8-hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: a candidate system for high storage capacity memory cells.

    PubMed

    Paydavosi, Sarah; Aidala, Katherine E; Brown, Patrick R; Hashemi, Pouya; Supran, Geoffrey J; Osedach, Timothy P; Hoyt, Judy L; Bulović, Vladimir

    2012-03-14

    Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells.

  6. Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

    DOE PAGES

    Zhang, Ruihong; Cho, Seonghyuk; Lim, Daw Gen; ...

    2016-03-15

    We found that bulk metals and metal chalcogenides dissolve in primary amine–dithiol solvent mixtures at ambient conditions. Thin-films of CuS, SnS, ZnS, Cu2Sn(Sx,Se1-x)3, and Cu2ZnSn(SxSe1-x)4 (0 ≤ x ≤ 1) were deposited using the as-dissolved solutions. Furthermore, Cu2ZnSn(SxSe1-x)4 solar cells with efficiencies of 6.84% and 7.02% under AM1.5 illumination were fabricated from two example solution precursors, respectively.

  7. Thin film ceramic thermocouples

    NASA Technical Reports Server (NTRS)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  8. Electrocaloric devices based on thin-film heat switches

    NASA Astrophysics Data System (ADS)

    Epstein, Richard I.; Malloy, Kevin J.

    2009-09-01

    We describe a new approach to refrigeration, heat pumping, and electrical generation that allows one to exploit the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators and heat pumps or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of electrocaloric thin-film devices can be at least as high as that of current thermoelectric devices. Advanced heat switches that may use carbon nanotubes would enable thin-film refrigerators and generators to outperform conventional vapor-compression devices.

  9. Progress in polycrystalline thin-film solar cells

    SciTech Connect

    Zweibel, K; Hermann, A; Mitchell, R

    1983-07-01

    Photovoltaic devices based on several polycrystalline thin-film materials have reached near and above 10% sunlight-to-electricity conversion efficiencies. This paper examines the various polycrystalline thin-film PV materials including CuInSe/sub 2/ and CdTe in terms of their material properties, fabrication techniques, problems, and potentials.

  10. Thin film solar cell workshop

    NASA Technical Reports Server (NTRS)

    Armstrong, Joe; Jeffrey, Frank

    1993-01-01

    A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

  11. VACUUM DEPOSITION OF THIN FILMS,

    DTIC Science & Technology

    The book deals with methods of obtaining and processing thin films , methods of measuring the deposition rate and thickness of thin-film layers, and...the main fields of application of thin films . Vacuum requirements and the requirements for the composition of the residual medium in thermal...evaporation and cathode sputtering are given, and modern methods of producing and measuring vacuums and the equipment used in obtaining thin films are described. (Author)

  12. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Lu, Zhong-Lin; Zou, Wen-Qin; Xu, Ming-Xiang; Zhang, Feng-Ming; Du, You-Wei

    2009-11-01

    High-quality Ga-doped ZnO (ZnO:Ga) single crystalline films with various Ga concentrations are grown on a-plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2 at.% and the lowest resistivity can reach 1.92 × 10-4 Ω·cm at room temperature, close to the best value reported. In contrast to ZnO:Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO:Ga thin film is discussed.

  13. Ab initio molecular dynamics model for density, elastic properties and short range order of Co-Fe-Ta-B metallic glass thin films.

    PubMed

    Hostert, C; Music, D; Bednarcik, J; Keckes, J; Kapaklis, V; Hjörvarsson, B; Schneider, J M

    2011-11-30

    Density, elastic modulus and the pair distribution function of Co-Fe-Ta-B metallic glasses were obtained by ab initio molecular dynamics simulations and measured for sputtered thin films using x-ray reflectivity, nanoindentation and x-ray diffraction using high energy photons. The computationally obtained density of 8.19 g cm(-3) for Co(43)Fe(20)Ta(5.5)B(31.5) and 8.42 g cm(-3) for Co(45.5)Fe(24)Ta(6)B(24.5), as well as the Young's moduli of 273 and 251 GPa, respectively, are consistent with our experiments and literature data. These data, together with the good agreement between the theoretical and the experimental pair distribution functions, indicate that the model established here is useful to describe the density, elasticity and short range order of Co-Fe-Ta-B metallic glass thin films. Irrespective of the investigated variation in chemical composition, (Co, Fe)-B cluster formation and Co-Fe interactions are identified by density-of-states analysis. Strong bonds within the structural units and between the metallic species may give rise to the comparatively large stiffness.

  14. Protein thin film machines.

    PubMed

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-12-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fueled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  15. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  16. Pulsed laser deposition and characterization of cellulase thin films

    NASA Astrophysics Data System (ADS)

    Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

    2013-08-01

    Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

  17. Probing differential hydration of poly(vinylpyrrolidone) thin films using tracer mobility: an insight from fluorescence correlation spectroscopy.

    PubMed

    Bhattacharya, Sukanya; Dey, Arghya; Chowdhury, Arindam

    2014-05-15

    Dynamics of small probe molecules have been routinely used to unravel the intrinsic details of charged ion transport in polymer brushes and polyelectrolyte multilayer (PEM) thin films. However, corresponding morphological properties affected with absorption of moisture have been hardly dealt with despite numerous applications of isotropic thin films in material chemistry and medical purposes. We have explored the overall structural changes associated with plasticization of PVP thin films by probing dynamics of small reporter (rhodamine 6G, Rh6G) molecules using fluorescence correlation spectroscopy (FCS). It was observed that under lesser amounts of absorbed moisture, the rigidity of the film matrix was high enough to inhibit appreciable molecular mobility. Nonetheless, with gradual increase in the moisture level within the film, molecular movement became extremely facile, so much so that it almost attained close to a solution like state. Molecular mobility was found to be dependent on both the method of preparation and the thickness of the thin films. The diffusivities mostly followed anomalous subdiffusive behaviors, reminiscent of dynamics of tracers in crowded cellular environments. The mobility was found to be independent of any electrostatic interaction between probe and polymer thin film. Hence, the tracer dynamics was attributed most likely to the viscoelasticity of the thin film matrix.

  18. Progress on thin-film sensors for space propulsion technology

    NASA Technical Reports Server (NTRS)

    Kim, Walter S.

    1987-01-01

    The objective is to develop thin-film thermocouples for Space Shuttle Main Engine (SSME) components. Thin-film thermocouples have been developed for aircraft gas turbine engines and are in use for temperature measurement on turbine blades to 1800 F. The technology established for aircraft gas turbine engines will be adapted to the materials and environment encountered in the SSME. Specific goals are to expand the existing in-house thin-film sensor technology and to test the survivability and durability of thin-film sensors in the SSME environment.

  19. Organic Thin-Film Transistors with Phase Separation of Polymer-Blend Small-Molecule Semiconductors: Dependence on Molecular Weight and Types of Polymer

    NASA Astrophysics Data System (ADS)

    Ohe, Takahiro; Kuribayashi, Miki; Tsuboi, Ami; Satori, Kotaro; Itabashi, Masao; Nomoto, Kazumasa

    2009-12-01

    We have investigated effect of polymer on solution-processed organic thin-film transistors (TFTs) with polymer-blend semiconductors. Organic TFTs made from a solution of 6,13-bis(triisopropylsilylethynyl)-pentacene with a poly(α-methylstyrene) (PaMS) molecular weight of 20 k or above, exhibited mobility around 0.1 cm2/(V.s). On the other hand, the organic TFTs with a PaMS molecular weight of 2 k or with a poly(isobutyl methacrylate), exhibited much lower mobility. This can be explained in terms of the structure and crystallinity of the films. The results of film structure can be explained by applying the Flory-Huggins theory.

  20. Thin-Film Organic Electronic Devices

    NASA Astrophysics Data System (ADS)

    Katz, Howard E.; Huang, Jia

    2009-08-01

    We review recently published advancements in thin-film organic devices, ranging from the composition and properties of organic materials to be used in devices, to the applications of devices, with special emphasis on thin-film transistors, diodes, and chemical sensors. We present exemplary materials used in each kind of device, outline the physical mechanisms behind the functioning of the devices, and discuss the most advanced capabilities of the devices and device assemblies. Advantages to the selection of organic and polymeric materials, future prospects, and challenges for organic-based electronics are also considered.

  1. Studies of Yttrium BARIUM(2) COPPER(3) OXYGEN(7 - Materials and Layered Thin Films: Their Growth and Interdiffusion Behavior, Fermi Edge Density, and the Oxygen Depletion Problem

    NASA Astrophysics Data System (ADS)

    Chen, Li-Mei

    In 1987, Paul Chu and his colleagues discovered the high-T_{c} YBa_2Cu_3O _{7-x} (1-2-3) superconductor (HTSC). The most important research still needed on this system from a scientific point of view is to get insight into the superconducting mechanism of this new material. Using these materials in the foof films seems the most realistic for widespread application. Therefore, research in this thesis on these HTSC materials have been carried out in four parts: (1) the oxygen depletion problem, (2) Fermi density of state, (3) interdiffusion behavior and (4) multilayer growth. HTSC thin films were successfully made by either ion beam deposition or R-F magnetron sputtering at the EIC Laboratory in Massachusetts. C-axis oriented epitaxial HTSC thin films were deposited onto MgO, YSZ and sapphire. A variety of different buffer layers were also deposited onto the above-mentioned substrates to try to effectuate the elimination the interaction between the substrates and the HTSC thin films. For further interdiffusion behavior studies, the above mentioned buffer layers were also deposited in a superconductor-insulator-superconductor (S-I-S) geometry. This geometry is one employed in Josephson junctions which are the key elements of superconductive electronics. We have also studied the behavior of select HTSC ceramic systems during changes in atmospheric conditions. A four-point probe was used to measure the HTSC ceramic transition temperature. From these results, we found that in the presence of an ambient oxygen background equivalent to several torr at room temperature, the HTSC materials produced a metallic R vs. T behavior with T_0 (onset) of ~103 K and T _{c} of ~ 91 K. Lowering the oxygen pressure, followed by repeated temperature cycling, produced a continuous reduction in T_{c} to value ~60 K. Reintroduction of various dose O_2 or air immediately increased the T_{c}, with apparent total restoration to the optimal resistance values at ~5 torr to 12 torr. A finite Fermi

  2. The effect of laser energy on V2O5 thin film growth prepared by laser assisted molecular beam deposition

    NASA Astrophysics Data System (ADS)

    Abdel Samad, B.; Ashrit, P. V.

    2014-09-01

    Vanadium pentoxide V2O5 thin films were grown on glass substrates by the LAMBD deposition system with different laser energies. The structure, composition and optical properties of the films have been investigated with atomic force microscopy, x-ray photoemission spectroscopy, ellipsometry and the transmittance analysis. Upon the increase of laser energy, the results showed that the changes in the optical constants are consistent with the thickness changes of the film. The refractive index increases and the absorption coefficient increases when the laser energy increases. The AFM analysis showed a change of the roughness and structure of the deposited films at different laser energies. The prepared films deposited by LAMBD showed interesting properties with correct V2O5 phase without need of annealing after deposition.

  3. Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Xu, J. F.; Thibado, P. M.; Awo-Affouda, C.; Ramos, F.; Labella, V. P.

    Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 {\\deg}C using various Mn cell temperatures have been investigated with dynamic secondary ion mass spectrometry and Auger electron spectroscopy. When the samples are grown at a low substrate temperature of 250 {\\deg}C, the Mn distributes uniformly. For the samples grown at a high substrate temperature of 580 {\\deg}C, the concentration depth profiles are easily fitted with a temperature-dependent Fermi function only if the Mn concentration is above the solubility limit. However, when the Mn concentration is below the solubility limit, unexpected peaks are observed in the concentration depth profiles.

  4. Defect study of molecular beam epitaxy grown undoped GaInNAsSb thin film using junction-capacitance spectroscopy

    SciTech Connect

    Monirul Islam, Muhammad; Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka

    2013-02-18

    Defects in undoped GaInNAsSb thin film (i-GaInNAsSb) were investigated by junction-capacitance technique using admittance and transient photocapacitance (TPC) spectroscopy. An electron trap D2 was identified at 0.34 eV below the conduction band (E{sub C}) of i-GaInNAsSb using admittance spectroscopy. Optical transition of valance band (E{sub V}) electrons to a localized state OH1 (E{sub V} + 0.75 eV) was manifested in negative TPC signal. Combined activation energy of OH1 and D2 defect corresponds to the band-gap of i-GaInNAsSb, suggesting that OH1/D2 acts as an efficient recombination center. TPC signal at {approx}1.59 eV above E{sub V} was attributed to the nitrogen-induced localized state in GaInNAsSb.

  5. Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

    SciTech Connect

    Zhang, Ruihong; Cho, Seonghyuk; Lim, Daw Gen; Hu, Xianyi; Stach, Eric A.; Handwerker, Carol A.; Agrawal, Rakesh

    2016-03-15

    We found that bulk metals and metal chalcogenides dissolve in primary amine–dithiol solvent mixtures at ambient conditions. Thin-films of CuS, SnS, ZnS, Cu2Sn(Sx,Se1-x)3, and Cu2ZnSn(SxSe1-x)4 (0 ≤ x ≤ 1) were deposited using the as-dissolved solutions. Furthermore, Cu2ZnSn(SxSe1-x)4 solar cells with efficiencies of 6.84% and 7.02% under AM1.5 illumination were fabricated from two example solution precursors, respectively.

  6. Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics

    NASA Astrophysics Data System (ADS)

    Kormondy, Kristy J.; Popoff, Youri; Sousa, Marilyne; Eltes, Felix; Caimi, Daniele; Rossell, Marta D.; Fiebig, Manfred; Hoffmann, Patrik; Marchiori, Chiara; Reinke, Michael; Trassin, Morgan; Demkov, Alexander A.; Fompeyrine, Jean; Abe, Stefan

    2017-02-01

    Significant progress has been made in integrating novel materials into silicon photonic structures in order to extend the functionality of photonic circuits. One of these promising optical materials is BaTiO3 or barium titanate (BTO) that exhibits a very large Pockels coefficient as required for high-speed light modulators. However, all previous demonstrations show a noticable reduction of the Pockels effect in BTO thin films deposited on silicon substrates compared to BTO bulk crystals. Here, we report on the strong dependence of the Pockels effect in BTO thin films on their microstructure, and provide guidelines on how to engineer thin films with strong electro-optic response. We employ several deposition methods such as molecular beam epitaxy and chemical vapor deposition to realize BTO thin films with different morphology and crystalline structure. While a linear electro-optic response is present even in porous, polycrystalline BTO thin films with an effective Pockels coefficient r eff = 6 pm V-1, it is maximized for dense, tetragonal, epitaxial BTO films (r eff = 140 pm V-1). By identifying the key structural predictors of electro-optic response in BTO/Si, we provide a roadmap to fully exploit the linear electro-optic effect in novel hybrid oxide/semiconductor nanophotonic devices.

  7. Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics.

    PubMed

    Kormondy, Kristy J; Popoff, Youri; Sousa, Marilyne; Eltes, Felix; Caimi, Daniele; Rossell, Marta D; Fiebig, Manfred; Hoffmann, Patrik; Marchiori, Chiara; Reinke, Michael; Trassin, Morgan; Demkov, Alexander A; Fompeyrine, Jean; Abel, Stefan

    2017-02-17

    Significant progress has been made in integrating novel materials into silicon photonic structures in order to extend the functionality of photonic circuits. One of these promising optical materials is BaTiO3 or barium titanate (BTO) that exhibits a very large Pockels coefficient as required for high-speed light modulators. However, all previous demonstrations show a noticable reduction of the Pockels effect in BTO thin films deposited on silicon substrates compared to BTO bulk crystals. Here, we report on the strong dependence of the Pockels effect in BTO thin films on their microstructure, and provide guidelines on how to engineer thin films with strong electro-optic response. We employ several deposition methods such as molecular beam epitaxy and chemical vapor deposition to realize BTO thin films with different morphology and crystalline structure. While a linear electro-optic response is present even in porous, polycrystalline BTO thin films with an effective Pockels coefficient r eff = 6 pm V(-1), it is maximized for dense, tetragonal, epitaxial BTO films (r eff = 140 pm V(-1)). By identifying the key structural predictors of electro-optic response in BTO/Si, we provide a roadmap to fully exploit the linear electro-optic effect in novel hybrid oxide/semiconductor nanophotonic devices.

  8. Femtosecond laser ablation-based mass spectrometry: An ideal tool for stoichiometric analysis of thin films

    PubMed Central

    LaHaye, Nicole L.; Kurian, Jose; Diwakar, Prasoon K.; Alff, Lambert; Harilal, Sivanandan S.

    2015-01-01

    An accurate and routinely available method for stoichiometric analysis of thin films is a desideratum of modern materials science where a material’s properties depend sensitively on elemental composition. We thoroughly investigated femtosecond laser ablation-inductively coupled plasma-mass spectrometry (fs-LA-ICP-MS) as an analytical technique for determination of the stoichiometry of thin films down to the nanometer scale. The use of femtosecond laser ablation allows for precise removal of material with high spatial and depth resolution that can be coupled to an ICP-MS to obtain elemental and isotopic information. We used molecular beam epitaxy-grown thin films of LaPd(x)Sb2 and T′-La2CuO4 to demonstrate the capacity of fs-LA-ICP-MS for stoichiometric analysis and the spatial and depth resolution of the technique. Here we demonstrate that the stoichiometric information of thin films with a thickness of ~10 nm or lower can be determined. Furthermore, our results indicate that fs-LA-ICP-MS provides precise information on the thin film-substrate interface and is able to detect the interdiffusion of cations. PMID:26285795

  9. Femtosecond laser ablation-based mass spectrometry. An ideal tool for stoichiometric analysis of thin films

    DOE PAGES

    LaHaye, Nicole L.; Kurian, Jose; Diwakar, Prasoon K.; ...

    2015-08-19

    An accurate and routinely available method for stoichiometric analysis of thin films is a desideratum of modern materials science where a material’s properties depend sensitively on elemental composition. We thoroughly investigated femtosecond laser ablation-inductively coupled plasma-mass spectrometry (fs-LA-ICP-MS) as an analytical technique for determination of the stoichiometry of thin films down to the nanometer scale. The use of femtosecond laser ablation allows for precise removal of material with high spatial and depth resolution that can be coupled to an ICP-MS to obtain elemental and isotopic information. We used molecular beam epitaxy-grown thin films of LaPd(x)Sb2 and T´-La2CuO4 to demonstrate themore » capacity of fs-LA-ICP-MS for stoichiometric analysis and the spatial and depth resolution of the technique. Here we demonstrate that the stoichiometric information of thin films with a thickness of ~10 nm or lower can be determined. Furthermore, our results indicate that fs-LA-ICP-MS provides precise information on the thin film-substrate interface and is able to detect the interdiffusion of cations.« less

  10. Femtosecond laser ablation-based mass spectrometry. An ideal tool for stoichiometric analysis of thin films

    SciTech Connect

    LaHaye, Nicole L.; Kurian, Jose; Diwakar, Prasoon K.; Alff, Lambert; Harilal, Sivanandan S.

    2015-08-19

    An accurate and routinely available method for stoichiometric analysis of thin films is a desideratum of modern materials science where a material’s properties depend sensitively on elemental composition. We thoroughly investigated femtosecond laser ablation-inductively coupled plasma-mass spectrometry (fs-LA-ICP-MS) as an analytical technique for determination of the stoichiometry of thin films down to the nanometer scale. The use of femtosecond laser ablation allows for precise removal of material with high spatial and depth resolution that can be coupled to an ICP-MS to obtain elemental and isotopic information. We used molecular beam epitaxy-grown thin films of LaPd(x)Sb2 and T´-La2CuO4 to demonstrate the capacity of fs-LA-ICP-MS for stoichiometric analysis and the spatial and depth resolution of the technique. Here we demonstrate that the stoichiometric information of thin films with a thickness of ~10 nm or lower can be determined. Furthermore, our results indicate that fs-LA-ICP-MS provides precise information on the thin film-substrate interface and is able to detect the interdiffusion of cations.

  11. Structural and optical properties of In doped Se-Te phase-change thin films: A material for optical data storage

    NASA Astrophysics Data System (ADS)

    Pathak, H. P.; Shukla, Nitesh; Kumar, Vipin; Dwivedi, D. K.

    2016-02-01

    Se75-xTe25Inx (x = 0, 3, 6, & 9) bulk glasses were obtained by melt quench technique. Thin films of thickness 400 nm were prepared by thermal evaporation technique at a base pressure of 10-6 Torr onto well cleaned glass substrate. a-Se75-xTe25Inx thin films were annealed at different temperatures for 2 h. As prepared and annealed films were characterized by X-ray diffraction and UV-Vis spectroscopy. The X-ray diffraction results show that the as-prepared films are of amorphous nature while it shows some poly-crystalline structure in amorphous phases after annealing. The optical absorption spectra of these films were measured in the wavelength range 400-1100 nm in order to derive the extinction and absorption coefficient of these films. It was found that the mechanism of optical absorption follows the rule of allowed non-direct transition. The optical band gap of as prepared and annealed films as a function of photon energy has been studied. The optical band gap is found to decrease with increase in annealing temperature in the present glassy system. It happens due to crystallization of amorphous films. The decrease in optical band gap due to annealing is an interesting behavior for a material to be used in optical storage. The optical band gap has been observed to decrease with the increase of In content in Se-Te glassy system.

  12. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  13. Thin-film rechargeable lithium batteries

    SciTech Connect

    Dudney, N.J.; Bates, J.B.; Lubben, D.

    1995-06-01

    Thin-film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin-film battery.

  14. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments Database

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  15. [The study of selecting sample detecting position and lead plate inner material in thin film method X-ray fluorescence measurement].

    PubMed

    Gan, Ting-ting; Zhang, Yu-jun; Zhao, Nan-jing; Yin, Gao-fang; Dong, Xin-xin; Wang, Ya-ping; Liu Jian-guo; Liu, Wen-qing

    2015-01-01

    (1) In this paper type 316 stainless steel metal plate as the research object, the selection of sample detecting position was studied when thin film method X-ray fluorescence measurement was conducted. The study showed that the optimal location for the sample detection was sample distance X-ray tube and detector baseline 1cm with the baseline into a 16°angle. (2) Heavy metal pollutants of Pb, Cd and Cr in industrial ambient air as the main analysis object, when thin film method X-ray fluorescence conducted with lead plate protection, X-rays will penetrate the membrane and continuely stimulate the protective lead plate. Therefore there is lead spectral line interference in the filter membrane background spectrum, which will affect the detection of lead element in real samples. Studies show that when a layer of isolating material was applied between the thin sample and the protective lead plate, the interference of lead line can effectively be avoided. (3) Several rigid insulating material of type 316 stainless steel, brass, aluminum, red copper and PTEE as lead inner material were selected and studied. The study results showed that compared with X-ray fluorescence spectra of other lead inner materials, the X-ray fluorescence spectrum of red copper contained the least element spectral lines. There were not Cr, Cd and Pb spectrum peaks in the X-ray fluorescence spectrum of red copper. And the target timber scattering spectrum intensity in the high energy part was weaker compared to other X-ray fluorescence spectrum. The above analysis shows that red copper has the minimal disturbance to the actual measurement of heavy metals Cr, Cd and Pb. At the same time, red copper as lead inner materials can effectively avoid the interference of lead spectrum line in lead plate. So red copper is the best lead plate inner materials in thin film method X-ray fluorescence spectroscopy measurement. This study provides an important theoretical basis for the assembling and setting

  16. Ferromagnetic properties of fcc Gd thin films

    SciTech Connect

    Bertelli, T. P. Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y.

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  17. Domain formation due to surface steps in topological insulator Bi{sub 2}Te{sub 3} thin films grown on Si (111) by molecular beam epitaxy

    SciTech Connect

    Borisova, S.; Kampmeier, J.; Mussler, G.; Grützmacher, D.; Luysberg, M.

    2013-08-19

    The atomic structure of topological insulators Bi{sub 2}Te{sub 3} thin films on Si (111) substrates grown in van der Waals mode by molecular beam epitaxy has been investigated by in situ scanning tunneling microscopy and scanning transmission electron microscopy. Besides single and multiple quintuple layer (QL) steps, which are typical for the step-flow mode of growth, a number of 0.4 QL steps is observed. We determine that these steps originate from single steps at the substrate surface causing domain boundaries in the Bi{sub 2}Te{sub 3} film. Due to the peculiar structure of these domain boundaries the domains are stable and penetrate throughout the entire film.

  18. Effect of GaN interlayer on polarity control of epitaxial ZnO thin films grown by molecular beam epitaxy

    SciTech Connect

    Wang, X. Q.; Sun, H. P.; Pan, X. Q.

    2010-10-11

    Epitaxial ZnO thin films were grown on nitrided (0001) sapphire substrates with an intervening GaN layer by rf-plasma-assisted molecular beam epitaxy. It was found that polarity of the ZnO epilayer could be controlled by modifying the GaN interlayer. ZnO grown on a distorted 3-nm-thick GaN interlayer has Zn-polarity while ZnO on a 20-nm-thick GaN interlayer with a high structural quality has O-polarity. High resolution transmission electron microscopy analysis indicates that the polarity of ZnO epilayer is controlled by the atomic structure of the interface between the ZnO buffer layer and the intervening GaN layer.

  19. Electron spin resonance of Zn{sub 1-x}Mg{sub x}O thin films grown by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Wassner, T. A.; Stutzmann, M.; Brandt, M. S.; Laumer, B.; Althammer, M.; Goennenwein, S. T. B.; Eickhoff, M.

    2010-08-30

    Zn{sub 1-x}Mg{sub x}O thin films with a Mg content x between 0 and 0.42 grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates were investigated by electron spin resonance at 5 K. Above band gap illumination induces a persistent resonance signal, which is attributed to free conduction band electrons. The g-factors of the Zn{sub 1-x}Mg{sub x}O epitaxial layers and their anisotropy were determined experimentally and an increase from g{sub ||}=1.957 for x=0 to g{sub ||}=1.970 for x=0.42 was found, accompanied by a decrease in anisotropy. A comparison with g-factors of the Al{sub x}Ga{sub 1-x}N system is also given.

  20. New Layered Structures of Cuprous Chalcogenides as Thin Film Solar Cell Materials: Cu2Te and Cu2Se

    NASA Astrophysics Data System (ADS)

    Nguyen, Manh Cuong; Choi, Jin-Ho; Zhao, Xin; Wang, Cai-Zhuang; Zhang, Zhenyu; Ho, Kai-Ming

    2013-10-01

    The stable crystal structures of two cuprous chalcogenides of Cu2X (X=Te or Se) are predicted using an adaptive genetic algorithm in combination with first-principles density functional theory calculations. Both systems are found to prefer a unique and previously unrecognized layered structure, with the total energies much lower than all structures proposed in the literature so far. The newly discovered structures are further shown to be dynamically and mechanically stable, and possess electronic properties consistent with existing experimental observations. In particular, their layered nature is expected to prevail over other structural forms at the interfaces of thin-film solar cells, and knowledge about the precise atomic structures of the interfaces is a prerequisite for achieving long-term stability and high efficiency of CdTe and Cu(In,Ga)Se2 solar cells.

  1. New layered structures of cuprous chalcogenides as thin film solar cell materials: Cu2Te and Cu2Se.

    PubMed

    Nguyen, Manh Cuong; Choi, Jin-Ho; Zhao, Xin; Wang, Cai-Zhuang; Zhang, Zhenyu; Ho, Kai-Ming

    2013-10-18

    The stable crystal structures of two cuprous chalcogenides of Cu2X (X=Te or Se) are predicted using an adaptive genetic algorithm in combination with first-principles density functional theory calculations. Both systems are found to prefer a unique and previously unrecognized layered structure, with the total energies much lower than all structures proposed in the literature so far. The newly discovered structures are further shown to be dynamically and mechanically stable, and possess electronic properties consistent with existing experimental observations. In particular, their layered nature is expected to prevail over other structural forms at the interfaces of thin-film solar cells, and knowledge about the precise atomic structures of the interfaces is a prerequisite for achieving long-term stability and high efficiency of CdTe and Cu(In,Ga)Se2 solar cells.

  2. ON THE ANALYSIS OF SPECTRA IN TRANSMISSION THROUGH THIN FILMS,

    DTIC Science & Technology

    Reprint: On the analysis of spectra in transmission through thin films . A technique to investigate the adequacy of the damped harmonicoscillator...model for IR absorption in thin films . Procedure for extracting material parameters and film thickness from the transmission curve.

  3. Layer-by-layer grown scalable redox-active ruthenium-based molecular multilayer thin films for electrochemical applications and beyond

    NASA Astrophysics Data System (ADS)

    Kaliginedi, Veerabhadrarao; Ozawa, Hiroaki; Kuzume, Akiyoshi; Maharajan, Sivarajakumar; Pobelov, Ilya V.; Kwon, Nam Hee; Mohos, Miklos; Broekmann, Peter; Fromm, Katharina M.; Haga, Masa-Aki; Wandlowski, Thomas

    2015-10-01

    Here we report the first study on the electrochemical energy storage application of a surface-immobilized ruthenium complex multilayer thin film with anion storage capability. We employed a novel dinuclear ruthenium complex with tetrapodal anchoring groups to build well-ordered redox-active multilayer coatings on an indium tin oxide (ITO) surface using a layer-by-layer self-assembly process. Cyclic voltammetry (CV), UV-Visible (UV-Vis) and Raman spectroscopy showed a linear increase of peak current, absorbance and Raman intensities, respectively with the number of layers. These results indicate the formation of well-ordered multilayers of the ruthenium complex on ITO, which is further supported by the X-ray photoelectron spectroscopy analysis. The thickness of the layers can be controlled with nanometer precision. In particular, the thickest layer studied (65 molecular layers and approx. 120 nm thick) demonstrated fast electrochemical oxidation/reduction, indicating a very low attenuation of the charge transfer within the multilayer. In situ-UV-Vis and resonance Raman spectroscopy results demonstrated the reversible electrochromic/redox behavior of the ruthenium complex multilayered films on ITO with respect to the electrode potential, which is an ideal prerequisite for e.g. smart electrochemical energy storage applications. Galvanostatic charge-discharge experiments demonstrated a pseudocapacitor behavior of the multilayer film with a good specific capacitance of 92.2 F g-1 at a current density of 10 μA cm-2 and an excellent cycling stability. As demonstrated in our prototypical experiments, the fine control of physicochemical properties at nanometer scale, relatively good stability of layers under ambient conditions makes the multilayer coatings of this type an excellent material for e.g. electrochemical energy storage, as interlayers in inverted bulk heterojunction solar cell applications and as functional components in molecular electronics applications

  4. Thin-Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.

    1993-01-01

    Direct conversion of thermal energy into electrical energy using a photovoltaic cell is called thermophotovoltaic energy conversion. One way to make this an efficient process is to have the thermal energy source be an efficient selective emitter of radiation. The emission must be near the band-gap energy of the photovoltaic cell. One possible method to achieve an efficient selective emitter is the use of a thin film of rare-earth oxides. The determination of the efficiency of such an emitter requires analysis of the spectral emittance of the thin film including scattering and reflectance at the vacuum-film and film-substrate interfaces. Emitter efficiencies (power emitted in emission band/total emitted power) in the range 0.35-0.7 are predicted. There is an optimum optical depth to obtain maximum efficiency. High emitter efficiencies are attained only for low (less than 0.05) substrate emittance values, both with and without scattering. The low substrate emittance required for high efficiency limits the choice of substrate materials to highly reflective metals or high-transmission materials such as sapphire.

  5. Carrier lifetimes in thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  6. Mesoscale morphologies in polymer thin films.

    SciTech Connect

    Ramanathan, M.; Darling, S. B.

    2011-06-01

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  7. Thin-film rechargeable lithium batteries

    SciTech Connect

    Dudney, N.J.; Bates, J.B.; Lubben, D.

    1994-11-01

    Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxyniuide electrolyte, Li metal anode, and Li{sub 1-x}Mn{sub 2}O{sub 4} as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100{degrees}C or by enhancing the lithium ion transport rate in the cathode material.

  8. Method for synthesizing thin film electrodes

    DOEpatents

    Boyle, Timothy J.

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  9. Applications of Thin Film Thermocouples for Surface Temperature Measurement

    NASA Technical Reports Server (NTRS)

    Martin, Lisa C.; Holanda, Raymond

    1994-01-01

    Thin film thermocouples provide a minimally intrusive means of measuring surface temperature in hostile, high temperature environments. Unlike wire thermocouples, thin films do not necessitate any machining of the surface, therefore leaving intact its structural integrity. Thin films are many orders of magnitude thinner than wire, resulting in less disruption to the gas flow and thermal patterns that exist in the operating environment. Thin film thermocouples have been developed for surface temperature measurement on a variety of engine materials. The sensors are fabricated in the NASA Lewis Research Center's Thin Film Sensor Lab, which is a class 1000 clean room. The thermocouples are platinum-13 percent rhodium versus platinum and are fabricated by the sputtering process. Thin film-to-leadwire connections are made using the parallel-gap welding process. Thermocouples have been developed for use on superalloys, ceramics and ceramic composites, and intermetallics. Some applications of thin film thermocouples are: temperature measurement of space shuttle main engine turbine blade materials, temperature measurement in gas turbine engine testing of advanced materials, and temperature and heat flux measurements in a diesel engine. Fabrication of thin film thermocouples is described. Sensor durability, drift rate, and maximum temperature capabilities are addressed.

  10. Characteristics Of Vacuum Deposited Sucrose Thin Films

    NASA Astrophysics Data System (ADS)

    Ungureanu, F.; Predoi, D.; Ghita, R. V.; Vatasescu-Balcan, R. A.; Costache, M.

    Thin films of sucrose (C12H22O11) were deposited on thin cut glass substrates by thermal evaporation technique (p ~ 10-5 torr). The surface morphology was putted into evidence by FT-IR and SEM analysis. The experimental results confirm a uniform deposition of an adherent sucrose layer. The biological tests (e.g., cell morphology and cell viability evaluated by measuring mitochondrial dehydrogenise activity with MTT assay) confirm the properties of sucrose thin films as bioactive material. The human fetal osteoblast system grown on thin sucrose film was used for the determination of cell proliferation, cell viability and cell morphology studies.

  11. Elastohydrodynamic studies using thin film transducers

    NASA Astrophysics Data System (ADS)

    Safa, M. M. A.; MacPherson, P. B.

    1984-01-01

    Thin film microtransducers for application to the study of the variation of pressure, temperature, and oil film thickness in an elastohydrodynamically lubricated, nominal line contact were developed. Fabrication techniques were improved to enhance the useful life. Techniques to achieve higher resolution by reducing sensor size and improving the signal monitoring circuitry were developed. Material properties in thin film form used in fabricating the sensors were examined. Possible sources of errors in interpreting the results obtained from these devices were studied. Results under various operating conditions were compared with theoretical and experimental results, and reasonably good agreement is found.

  12. Feasibility Study of Thin Film Thermocouple Piles

    NASA Technical Reports Server (NTRS)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  13. Emittance Theory for Thin Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  14. Pulsed Laser Deposition of Nanoporous Cobalt Thin Films

    PubMed Central

    Jin, Chunming; Nori, Sudhakar; Wei, Wei; Aggarwal, Ravi; Kumar, Dhananjay; Narayan, Roger J.

    2013-01-01

    Nanoporous cobalt thin films were deposited on anodized aluminum oxide (AAO) membranes at room temperature using pulsed laser deposition. Scanning electron microscopy demonstrated that the nanoporous cobalt thin films retained the monodisperse pore size and high porosity of the anodized aluminum oxide substrates. Temperature- and field-dependent magnetic data obtained between 10 K and 350 K showed large hysteresis behavior in these materials. The increase of coercivity values was larger for nanoporous cobalt thin films than for multilayered cobalt/alumina thin films. The average diameter of the cobalt nanograins in the nanoporous cobalt thin films was estimated to be ~5 nm for blocking temperatures near room temperature. These results suggest that pulsed laser deposition may be used to fabricate nanoporous magnetic materials with unusual properties for biosensing, drug delivery, data storage, and other technological applications. PMID:19198344

  15. Self-Limited Growth in Pentacene Thin Films

    PubMed Central

    2017-01-01

    Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought. PMID:28287698

  16. Stretchable, adhesive and ultra-conformable elastomer thin films.

    PubMed

    Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji

    2016-11-16

    Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (Tg). In this paper, we report that free-standing polystyrene (PS, Tg: 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, Tg: -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (Ra = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

  17. A basic thin film study of spinel LiMn{sub 2}O{sub 4} as a possible cathode material for lithium secondary cells

    SciTech Connect

    Miura, Takashi; Kishi, Tomiya

    1995-12-31

    In a series of fundamental studies on the cathode active materials for a lithium secondary cell using geometrically well-defined sample electrodes, thin films of spinel LiMn{sub 2}O{sub 4} on a platinum plate were investigated in this work in an LiClO{sub 4}/propylene carbonate solution. These pyrolytically prepared films exhibit reversible extraction/insertion behavior for lithium under galvanostatic charge/discharge cycling between 4.3--3.5 V. The chemical diffusion coefficient of lithium in Li{sub x}Mn{sub 2}O{sub 4} determined by the galvanostatic intermittent titration technique (GITT) was in the order of 10{sup {minus}7}--10{sup {minus}10} cm{sup 2} {center_dot} s{sup {minus}1} within a spinel single-phase region of 0.6 < x < 1.0 and increased with increasing x.

  18. An overview of thin film nitinol endovascular devices.

    PubMed

    Shayan, Mahdis; Chun, Youngjae

    2015-07-01

    Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications.

  19. Metal Induced Growth of Si Thin Films and NiSi Nanowires

    DTIC Science & Technology

    2010-02-25

    Zinc Oxide Over MIG Silicon- We have been studying the formation of ZnO films by RF sputtering. Part of this study deals with...about 50 nm. 15. SUBJECT TERMS Thin film silicon, solar cells, thin film transistors , nanowires, metal induced growth 16. SECURITY CLASSIFICATION...to achieve, µc-Si is more desirable than a-Si due to its increased mobility. Thin film µc-Si is also a popular material for thin film transistors

  20. Thin-Film Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  1. Measuring the Thickness and Elastic Properties of Electroactive Thin-Film Polymers Using Platewave Dispersion Data

    NASA Technical Reports Server (NTRS)

    Bar-Cohen, Yoseph; Lih, Shyh-Shiuh; El-Azab, A.; Mal, Ajit K.

    1996-01-01

    Electroactive thin-film polymers are candidate sensors and actuators materials. They are also finding significant potential in muscle mechanisms and microelectromechanical systems (MEMS). In these applications, polymer thin films of thickness varying between 20 and 300 micrometers are utilized. The authors are currently studying the potential use of platewave dispersion curve measurements as an effective gauging tool for electroactive thin-film polymers.

  2. Synthesis and materials chemistry of bismuth tris-(di-i-propylcarbamate): deposition of photoactive Bi2O3 thin films.

    PubMed

    Cosham, Samuel D; Hill, Michael S; Horley, Graeme A; Johnson, Andrew L; Jordan, Laura; Molloy, Kieran C; Stanton, David C

    2014-01-06

    The bismuth carbamate Bi(O2CNPr(i)2)3, a tetramer in the solid-state, has been synthesized and used to deposit mixtures of bismuth oxides by aerosol-assisted chemical vapor deposition (AACVD). The nature of the deposited oxide is a function of both temperature and run-time. Initially, δ-Bi2O3 is deposited, over which grows a thick layer of β-Bi2O3 nanowires, the latter having an increasing degree of preferred orientation at higher deposition temperatures. The photocatalytic activity of a thin film of δ-Bi2O3 for the degradation of methylene blue dye was found to be similar to that of a commercial TiO2 film on glass, while the film overcoated with β-Bi2O3 nanowires was less active. Exposure of Bi(O2CNPr(i)2)3 to controlled amounts of moist air affords the novel oxo-cluster Bi8(O)6(O2CNPr(i)2)12, whose structure has also been determined.

  3. Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1983-01-01

    Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

  4. Thin film hydrogen sensor

    DOEpatents

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  5. Carbon thin film thermometry

    NASA Technical Reports Server (NTRS)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  6. A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators

    NASA Technical Reports Server (NTRS)

    Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor); Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor)

    2001-01-01

    A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

  7. Synthesis of Mesoporous Lithium Titanate Thin Films and Monoliths as an Anode Material for High-Rate Lithium-Ion Batteries.

    PubMed

    Balcı, Fadime Mert; Kudu, Ömer Ulaş; Yılmaz, Eda; Dag, Ömer

    2016-12-23

    Mesoporous Li4 Ti5 O12 (LTO) thin film is an important anode material for lithium-ion batteries (LIBs). Mesoporous films could be prepared by self-assembly processes. A molten-salt-assisted self-assembly (MASA) process is used to prepare mesoporous thin films of LTOs. Clear solutions of CTAB, P123, LiNO3 , HNO3 , and Ti(OC4 H9 )4 in ethanol form gel-like meso-ordered films upon either spin or spray coating. In the assembly process, the CTAB/P123 molar ratio of 14 is required to accommodate enough salt species in the mesophase, in which the Li(I) /P123 ratio can be varied between molar ratios of 28 and 72. Calcination of the meso-ordered films produces transparent mesoporous spinel LTO films that are abbreviated as Cxx-yyy-zzz or CAxx-yyy-zzz (C=calcined, CA=calcined-annealed, xx=Li(I) /P123 molar ratio, and yyy=calcination and zzz=annealing temperatures in Celsius) herein. All samples were characterized by using XRD, TEM, N2 -sorption, and Raman techniques and it was found that, at all compositions, the LTO spinel phase formed with or without an anatase phase as an impurity. Electrochemical characterization of the films shows excellent performance at different current rates. The CA40-350-450 sample performs best among all samples tested, yielding an average discharge capacity of (176±1) mA h g(-1) at C/2 and (139±4) mA h g(-1) at 50 C and keeping 92 % of its initial discharge capacity upon 50 cycles at C/2.

  8. Thin film bioreactors in space

    NASA Technical Reports Server (NTRS)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  9. Thin-Film Photoluminescent Properties and the Atomistic Model of Mg2TiO4 as a Non-rare Earth Matrix Material for Red-Emitting Phosphor

    NASA Astrophysics Data System (ADS)

    Huang, Chieh-Szu; Chang, Ming-Chuan; Huang, Cheng-Liang; Lin, Shih-kang

    2016-12-01

    Thin-film electroluminescent devices are promising solid-state lighting devices. Red light-emitting phosphor is the key component to be integrated with the well-established blue light-emitting diode chips for stimulating natural sunlight. However, environmentally hazardous rare-earth (RE) dopants, e.g. Eu2+ and Ce2+, are commonly used for red-emitting phosphors. Mg2TiO4 inverse spinel has been reported as a promising matrix material for "RE-free" red light luminescent material. In this paper, Mg2TiO4 inverse spinel is investigated using both experimental and theoretical approaches. The Mg2TiO4 thin films were deposited on Si (100) substrates using either spin-coating with the sol-gel process, or radio frequency sputtering, and annealed at various temperatures ranging from 600°C to 900°C. The crystallinity, microstructures, and photoluminescent properties of the Mg2TiO4 thin films were characterized. In addition, the atomistic model of the Mg2TiO4 inverse spinel was constructed, and the electronic band structure of Mg2TiO4 was calculated based on density functional theory. Essential physical and optoelectronic properties of the Mg2TiO4 luminance material as well as its optimal thin-film processing conditions were comprehensively reported.

  10. Giant Seebeck effect in pure fullerene thin films

    NASA Astrophysics Data System (ADS)

    Kojima, Hirotaka; Abe, Ryo; Ito, Mitsuhiro; Tomatsu, Yasuyuki; Fujiwara, Fumiya; Matsubara, Ryosuke; Yoshimoto, Noriyuki; Nakamura, Masakazu

    2015-12-01

    The small thermal conductivity of molecular solids is beneficial for their thermoelectric applications. If Seebeck coefficients were sufficiently large to compensate for the relatively small electrical conductivity, these materials would be promising candidates for thermoelectric devices. In this work, the thermoelectric properties of C60 were studied by in situ measurements under ultrahigh vacuum after the deposition of a pure C60 thin film. An exceptionally large Seebeck coefficient of more than 150 mV/K was observed as a steady-state thermoelectromotive force. Even considering several extreme but realistic conditions, conventional semiclassical thermoelectric theories cannot explain this giant Seebeck effect.

  11. Zipper model for the melting of thin films

    NASA Astrophysics Data System (ADS)

    Abdullah, Mikrajuddin; Khairunnisa, Shafira; Akbar, Fathan

    2016-01-01

    We propose an alternative model to Lindemann’s criterion for melting that explains the melting of thin films on the basis of a molecular zipper-like mechanism. Using this model, a unique criterion for melting is obtained. We compared the results of the proposed model with experimental data of melting points and heat of fusion for many materials and obtained interesting results. The interesting thing reported here is how complex physics problems can sometimes be modeled with simple objects around us that seemed to have no correlation. This kind of approach is sometimes very important in physics education and should always be taught to undergraduate or graduate students.

  12. Self-organization and nanostructural control in thin film heterojunctions

    NASA Astrophysics Data System (ADS)

    Cataldo, Sebastiano; Sartorio, Camillo; Giannazzo, Filippo; Scandurra, Antonino; Pignataro, Bruno

    2014-03-01

    In spite of more than two-decades of studies of molecular self-assembly, the achievement of low cost, easy-to-implement and multi-parameter bottom-up approaches to address the supramolecular morphology in three-dimensional (3D) systems is still missing. In the particular case of molecular thin films, the 3D nanoscale morphology and function are crucial for both fundamental and applied research. Here we show how it is possible to tune the 3D film structure (domain size, branching, etc.) of thin film heterojunctions with nanoscale accuracy together with the modulation of their optoelectronic properties by employing an easy two-step approach. At first we prepared multi-planar heterojunctions with a programmed sequence of nanoscopic layers. In a second step, thermal stimuli have been employed to induce the formation of bulk heterojunctions with bicontinuous and interdigitated phases having a size below the exciton diffusion length. Importantly, the study of luminescence quenching of these systems can be considered as a useful means for the accurate estimation of the exciton diffusion length of semiconductors in nanoscale blends. Finally, nearly a thousand times lower material consumption than spin coating allows a drastic reduction of material wasting and a low-cost implementation, besides the considerable possibility of preparing thin film blends also by employing materials soluble in different solvents.In spite of more than two-decades of studies of molecular self-assembly, the achievement of low cost, easy-to-implement and multi-parameter bottom-up approaches to address the supramolecular morphology in three-dimensional (3D) systems is still missing. In the particular case of molecular thin films, the 3D nanoscale morphology and function are crucial for both fundamental and applied research. Here we show how it is possible to tune the 3D film structure (domain size, branching, etc.) of thin film heterojunctions with nanoscale accuracy together with the modulation of

  13. Thin film ion conducting coating

    DOEpatents

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  14. Methods of Producing Thin Films,

    DTIC Science & Technology

    The report describes various methods of producing thin films , especially for microelectronics. In addition to the classical methods of forming thin ... films by vacuum vapor deposition, it also describes processes of diode sputtering and modern methods of cathode sputtering by means of a third

  15. Thin Film Inorganic Electrochemical Systems.

    DTIC Science & Technology

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  16. BDS thin film damage competition

    SciTech Connect

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  17. Effects of hydrophilic solvent and oxidation resistance post surface treatment on molecular structure and forward osmosis performance of polyamide thin-film composite (TFC) membranes

    NASA Astrophysics Data System (ADS)

    Jia, Qibo; Xu, Yangyu; Shen, Jianquan; Yang, Haijun; Zhou, Lu

    2015-11-01

    In this article, novel hydrophilic solvents and antioxidants were used to post-treat aromatic polyamide thin-film composite (TFC) hollow fiber forward osmosis (FO) membranes. The effects of trimesoyl chloride (TMC) and oxalic acid on the structure of polyamide skin layer were investigated using ATR-FTIR and XPS analyses. Pure water flux and rejection of salts were detected using 2 M NaCl solution as draw solutions in FO processes. The results demonstrated that hydrophilic solvent N-methyl pyrrolidone (NMP) enhanced the water flux and kept a high salt retention of the TFC FO membrane. TMC and oxalic acid were both found to improve the oxidation resistance properties of the skin layer of TFC membrane because the electron-withdrawing carboxyl groups reduced the activity of polyamide molecular. The effects of the oxalic acid and carbodiimide on the molecular structures and the FO water flux of the polyamide TFC membranes were more marked than those of TMC. The novel TFC FO membrane treated by oxalic acid and 1-(3-dimethylaminopropyl)-3-ethylcarbodiimide hydrochloride (EDC) exhibited a high level of water flux (20.33 L m-2 h-1), and the rates of salt rejection and salt reverse rejection were higher by 50% and 83%, respectively.

  18. Molecular organization in the thin films of gallium(III) phthalocyanine chloride and its μ-(oxo)dimer: Optical spectroscopy and XPS study

    NASA Astrophysics Data System (ADS)

    Basova, Tamara V.; Kiselev, Vitaly G.; Latteyer, Florian; Peisert, Heiko; Chassé, Thomas

    2014-12-01

    Molecular arrangement in the thin films of gallium(III) phthalocyanine chloride (PcGaCl) and its μ-(oxo)dimer (μ-(oxo)bis[phthalocyaninato] gallium(III), (PcGa)2O) has been studied using complementary spectroscopic techniques: viz., X-ray photoelectron and optical (polarized Raman and UV-vis) spectroscopies, as well as atomic force microscopy. The former films grown by physical vapor deposition on ITO substrates transformed into the films of the latter μ-(oxo)dimer upon thermal annealing at 300 °C under controlled environmental conditions. The polarized Raman spectroscopy revealed that both films are well organized, and the mean tilt angle between the molecular planes and the substrate surface increases from 53 ± 5° (PcGaCl) to 85 ± 5° ((PcGa)2O). All intense bands in the experimental Raman spectra of PcGaCl and (PcGa)2O were assigned using density functional theory calculations. The theoretically predicted wavenumbers are in a good agreement with the experimental values.

  19. Sensing of digestive proteins in saliva with a molecularly imprinted poly(ethylene-co-vinyl alcohol) thin film coated quartz crystal microbalance sensor.

    PubMed

    Lee, Mei-Hwa; Thomas, James L; Tseng, Hong-Yi; Lin, Wei-Che; Liu, Bin-Da; Lin, Hung-Yin

    2011-08-01

    The quartz crystal microbalance (QCM) has a sensitivity comparable to that of the surface plasmon resonance (SPR) transducer. Molecularly imprinted polymers (MIPs) have a much lower cost than natural antibodies, they are easier to fabricate and more stable, and they exhibit satisfactory recognition ability when integrated onto sensing transducers. Hence, MIP-based QCM sensors have been used to recognize small molecules and, recently, microorganisms, but only a few have been adopted in protein sensing. In this work, a mixed salivary protein and poly(ethylene-co-vinyl alcohol), EVAL, solution is coated onto a QCM chip and a molecularly imprinted EVAL thin film formed by thermally induced phase separation (TIPS). The optimal ethylene mole ratios of the commercially available EVALs for the imprinting of amylase, lipase and lysozyme were found to be 32, 38, and 44 mol %, respectively. Finally, the salivary protein-imprinted EVAL-based QCM sensors were used to detect amylase, lipase and lysozyme in real samples (saliva) and their effectiveness was compared with that of a commercial ARCHITECT ci 8200 chemical analysis system. The limits of detection (LOD) for those salivary proteins were as low as ∼pM.

  20. Rechargeable Thin-film Lithium Batteries

    DOE R&D Accomplishments Database

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  1. David Adler Lectureship Award Talk: Friction and energy dissipation mechanisms in adsorbed molecules and molecularly thin films

    NASA Astrophysics Data System (ADS)

    Krim, Jacqueline

    2015-03-01

    Studies of the fundamental origins of friction have undergone rapid progress in recent years, with the development of new experimental and computational techniques for measuring and simulating friction at atomic length and time scales. The increased interest has sparked a variety of discussions and debates concerning the nature of the atomic-scale and quantum mechanisms that dominate the dissipative process by which mechanical energy is transformed into heat. Measurements of the sliding friction of physisorbed monolayers and bilayers can provide information on the relative contributions of these various dissipative mechanisms. Adsorbed films, whether intentionally applied or present as trace levels of physisorbed contaminants, moreover are ubiquitous at virtually all surfaces. As such, they impact a wide range of applications whose progress depends on precise control and/or knowledge of surface diffusion processes. Examples include nanoscale assembly, directed transport of Brownian particles, material flow through restricted geometries such as graphene membranes and molecular sieves, passivation and edge effects in carbon-based lubricants, and the stability of granular materials associated with frictional and frictionless contacts. Work supported by NSFDMR1310456.

  2. Workshop on thin film thermal conductivity measurements

    NASA Astrophysics Data System (ADS)

    Feldman, Albert; Balzaretti, Naira M.; Guenther, Arthur H.

    1998-04-01

    On a subject of considerable import to the laser-induced damage community, a two day workshop on the topic, Thin Film Thermal Conductivity Measurement was held as part of the 13th Symposium on Thermophysical Properties at the University of Colorado in Boulder CO, June 25 and 26, 1997. The Workshop consisted of 4 sessions of 17 oral presentations and two discussion sessions. Two related subjects of interest were covered; 1) methods and problems associated with measuring thermal conductivity ((kappa) ) of thin films, and 2) measuring and (kappa) of chemical vapor deposited (CVD) diamond. On the subject of thin film (kappa) measurement, several recently developed imaginative techniques were reviewed. However, several authors disagreed on how much (kappa) in a film differs from (kappa) in a bulk material of the same nominal composition. A subject of controversy was the definition of an interface. In the first discussion session, several questions were addressed, a principal one being, how do we know that the values of (kappa) we obtain are correct and is there a role for standards in thin film (kappa) measurement. The second discussion session was devoted to a round-robin interlaboratory comparison of (kappa) measurements on a set of CVD diamond specimens and several other specimens of lower thermal conductivity. Large interlaboratory differences obtained in an earlier round robin had been attributed to specimen inhomogeneity. Unfortunately, large differences were also observed in the second round robin even though the specimens were more homogenous. There was good consistency among the DC measurements, however, the AC measurements showed much greater variability. There was positive feedback from most of the attenders regarding the Workshop with nearly all respondents recommending another Workshop in three or fewer years. There was general recognition that thin film thermal conductivity measurements are important for predicting the resistance of optical coating

  3. Niobium Thin Film Characterization for Thin Film Technology Used in Superconducting Radiofrequency Cavities

    NASA Astrophysics Data System (ADS)

    Dai, Yishu; Valente-Feliciano, Anne-Marie

    2015-10-01

    Superconducting RadioFrequency (SRF) penetrates about 40-100 nm of the top surface, making thin film technology possible in producing superconducting cavities. Thin film is based on the deposition of a thin Nb layer on top of a good thermal conducting material such as Al or Cu. Thin film allows for better control of the surface and has negligible response to the Earth's magnetic field, eliminating the need for magnetic shielding of the cavities. Thin film superconductivity depends heavily on coating process conditions, involving controllable parameters such as crystal plane orientation, coating temperature, and ion energy. MgO and Al2O3 substrates are used because they offer very smooth surfaces, ideal for studying film growth. Atomic Force Microscopy is used to characterize surface's morphology. It is evident that a lower nucleation energy and a long coating time increases the film quality in the r-plane sapphire crystal orientation. The quality of the film increases with thickness. Nb films coated on r-plane, grow along the (001) plane and yield a much higher RRR compared to the films grown on a- and c-planes. This information allows for further improvement on the research process for thin film technology used in superconducting cavities for the particle accelerators. National Science Foundation, Department of Energy, Jefferson Lab, Old Dominion University.

  4. Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

    NASA Astrophysics Data System (ADS)

    Isik, Dilek

    This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

  5. Effect of microstructure on thermal conductivity of Cu, Ag thin films.

    PubMed

    Ryu, Sang; Juhng, Woonam; Kim, Youngman

    2010-05-01

    Thin film type materials are widely used in modern industries, such as semiconductor devices, functional superconductors, machining tools, and so on. The thermal properties of material in semiconductor are very important factors for stable operation because the heat generated during device operation may increase clock frequency. Even though thermal properties of thin films may play a major role in assessing reliability of parts, the measurement methods of thin film thermal properties are generally known to be complex to devise. In this study, a temperature distribution method was applied for the measurement of thermal conductivity of Cu and Ag thin film on borosilicate glass substrate. Cu and Ag thin films were deposited on borosilicate glass using thermal evaporation processes. To measure the thermal conductivity changes according to the microstructure of metallic thin film, the processing variables for the Cu and Ag thin film deposition were changed. To minimize the effect of film thickness, the film thickness was fixed to the thickness of approximately 500 nm throughout experiments. The thermal conductivities of thin films were measured to be much lower than those of bulk materials. Thin film with larger grain size showed higher thermal conductivity probably due to the lower number density of grain boundary. Weidman-Franz law could be applied to thin films produced in this study. Thermal conductivity was also estimated from the resistivity of thin film and Lorenz number of bulk material.

  6. Ferromagnetic thin films

    DOEpatents

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  7. Thin film hydrogen sensor

    DOEpatents

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  8. Ferromagnetic thin films

    DOEpatents

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  9. Polyimide Aerogel Thin Films

    NASA Technical Reports Server (NTRS)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  10. Dielectric properties of barium strontium titanate (BST) thin films and phase shifters based on BST thin films

    NASA Astrophysics Data System (ADS)

    Zhou, Xiaoyuan

    In recent years, barium strontium titanate (abbreviated as BST) thin films have attracted extensive interest. Ferroelectric/dielectric behavior of BST is influenced by a number of structural factors, such as lattice tetragonality, defects, ratio of barium to strontium, grain size and etc. In this work several key issues regarding BST thin films have been studied. First, a clear correlation between lattice tetragonality and ferroelectric and dielectric behaviors has been established. The studied material was Ba 0.7Sr0.3TiO3. Grown on substrates like (LaAlO 3)0.3(Sr2AlTaO6)0.7, LaAlO 3, MgAl2O4, BST thin films were found to have distorted lattices. This distorted lattice structure leads to the enhanced in-plane dielectric and ferroelectric properties. The formation mechanism of the lattice distortion was studied in a model system consisting of a SrTiO 3 (film)/SiTiO3 (substrate) homostructure. Among several parameters, deposition pressure was identified to be the critical factors that determined the lattice parameters of the perovskite oxides. Secondly, a phenomenological model was developed to interpret the strain effect on the in-plane dielectric properties of BST thin films with different thickness. The theoretical modeling involved the grouping of strain into biaxial and hydrostatic components, the use of the Landau-Ginsburg-Devonshire formalism and mathematical calculations related to the elastic Gibbs free energy. The calculations confirmed that the ferroelectric transition temperature (Curie temperature) and dielectric constant decrease with the decreasing of film thickness. Thirdly, The heterostructure, SrTiO3/Si, was first prepared by laser molecular-beam epitaxy using an ultra-thin Sr layer as the buffer layer. X-ray diffraction measurements indicated that SrTiO3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations by TEM and X-ray reflectivity measurements revealed that the SrTiO3/Si interface was sharp, smooth and fully

  11. Electrostatic spray deposition of porous Fe 2O 3 thin films as anode material with improved electrochemical performance for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Wang, L.; Xu, H. W.; Chen, P. C.; Zhang, D. W.; Ding, C. X.; Chen, C. H.

    Iron oxide materials are attractive anode materials for lithium-ion batteries for their high capacity and low cost compared with graphite and most of other transition metal oxides. Porous carbon-free α-Fe 2O 3 films with two types of pore size distribution were prepared by electrostatic spray deposition, and they were characterized by X-ray diffraction, scanning electron microscopy and X-ray absorption near-edge spectroscopy. The 200 °C-deposited thin film exhibits a high reversible capacity of up to 1080 mAh g -1, while the initial capacity loss is at a remarkable low level (19.8%). Besides, the energy efficiency and energy specific average potential (E av) of the Fe 2O 3 films during charge/discharge process were also investigated. The results indicate that the porous α-Fe 2O 3 films have significantly higher energy density than Li 4Ti 5O 12 while it has a similar E av of about 1.5 V. Due to the porous structure that can buffer the volume changes during lithium intercalation/de-intercalation, the films exhibit stable cycling performance. As a potential anode material for high performance lithium-ion batteries that can be applied on electric vehicle and energy storage, rate capability and electrochemical performance under high-low temperatures were also investigated.

  12. [Development of cloud chamber having thin-film entrance windows and proposal of practical training for beginners using X-ray equipment and unsealed radioactive material].

    PubMed

    Konishi, Yuki; Hayashi, Hiroaki; Takegami, Kazuki; Fukuda, Ikuma; Ueno, Junji

    2014-01-01

    A cloud chamber is a detector that can visualize the tracks of charged particles. Hayashi, et al. suggested a visualization experiment in which X-rays generated by diagnostic X-ray equipment were directed into a cloud chamber; however, there was a problem in that the wall of the cloud chamber scattered the incoming X-rays. In this study, we developed a new cloud chamber with entrance windows. Because these windows are made of thin film, we were able to direct the X-rays through them without contamination by scattered X-rays from the cloud chamber wall. We have newly proposed an experiment in which beta-particles emitted from radioisotopes are directed into a cloud chamber. We place shielding material in the cloud chamber and visualize the various shielding effects seen with the material positioned in different ways. During the experiment, electrons scattered in the air were measured quantitatively using GM counters. We explained the physical phenomena in the cloud chamber using Monte Carlo simulation code EGS5. Because electrons follow a tortuous path in air, the shielding material must be placed appropriately to be able to effectively block their emissions. Visualization of the tracks of charged particles in this experiment proved effective for instructing not only trainee radiological technologists but also different types of healthcare professionals.

  13. Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material

    NASA Astrophysics Data System (ADS)

    Jaramillo, R.; Sher, Meng-Ju; Ofori-Okai, Benjamin K.; Steinmann, V.; Yang, Chuanxi; Hartman, Katy; Nelson, Keith A.; Lindenberg, Aaron M.; Gordon, Roy G.; Buonassisi, T.

    2016-01-01

    Materials research with a focus on enhancing the minority-carrier lifetime of the light-absorbing semiconductor is key to advancing solar energy technology for both early stage and mature material platforms alike. Tin sulfide (SnS) is an absorber material with several clear advantages for manufacturing and deployment, but the record power conversion efficiency remains below 5%. We report measurements of bulk and interface minority-carrier recombination rates in SnS thin films using optical-pump, terahertz-probe transient photoconductivity (TPC) measurements. Post-growth thermal annealing in H2S gas increases the minority-carrier lifetime, and oxidation of the surface reduces the surface recombination velocity. However, the minority-carrier lifetime remains below 100 ps for all tested combinations of growth technique and post-growth processing. Significant improvement in SnS solar cell performance will hinge on finding and mitigating as-yet-unknown recombination-active defects. We describe in detail our methodology for TPC experiments, and we share our data analysis routines in the form freely available software.

  14. Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates

    NASA Astrophysics Data System (ADS)

    Tracy, Brian D.; Li, Xiang; Liu, Xinyu; Furdyna, Jacek; Dobrowolska, Margaret; Smith, David J.

    2016-11-01

    Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150 °C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn=3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn>10:1) gave higher quality, single-phase SnSe2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011]SnSe// [ 1 1 bar 0 ] GaAs, while the diselenide films were consistent with the Space Group P 3 bar m1 , and had the epitaxial growth relationship [ 2 1 bar 1 bar 0 ]SnSe2// [ 1 1 bar 0 ] GaAs.

  15. Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ishikawa, Ryo; Yamaguchi, Tomonari; Ohtaki, Yusuke; Akiyama, Ryota; Kuroda, Shinji

    2016-11-01

    We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTe template, fabricated by depositing it on a GaAs (111)A substrate, instead of BaF2 which has been conventionally used as a substrate. By optimizing temperatures for the growth of both SnTe and CdTe layers and the SnTe growth rate, we could obtain SnTe layers of the single phase grown only in the (111) orientation and of much improved surface morphology from the viewpoint of the extension and the flatness of flat regions, compared to the layers grown on BaF2. In this optimal growth condition, we have also achieved a low hole density of the order of 1017 cm-3 at 4 K, the lowest value ever reported for SnTe thin films without additional doping. In the magnetoresistance measurement on this optimized SnTe layer, we observe characteristic negative magneto-conductance which is attributed to the weak antilocalization effect of the two-dimensional transport in the topological surface state.

  16. Structural properties of Bi{sub 2−x}Mn{sub x}Se{sub 3} thin films grown via molecular beam epitaxy

    SciTech Connect

    Babakiray, Sercan; Johnson, Trent A.; Borisov, Pavel; Holcomb, Mikel B.; Lederman, David; Marcus, Matthew A.; Tarafder, Kartick

    2015-07-28

    The effects of Mn doping on the structural properties of the topological insulator Bi{sub 2}Se{sub 3} in thin film form were studied in samples grown via molecular beam epitaxy. Extended x-ray absorption fine structure measurements, supported by density functional theory calculations, indicate that preferential incorporation occurs substitutionally in Bi sites across the entire film volume. This finding is consistent with x-ray diffraction measurements which show that the out of plane lattice constant expands while the in plane lattice constant contracts as the Mn concentration is increased. X-ray photoelectron spectroscopy indicates that the Mn valency is 2+ and that the Mn bonding is similar to that in MnSe. The expansion along the out of plane direction is most likely due to weakening of the Van der Waals interactions between adjacent Se planes. Transport measurements are consistent with this Mn{sup 2+} substitution of Bi sites if additional structural defects induced by this substitution are taken into account.

  17. Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

    SciTech Connect

    Hardy, Matthew T. Storm, David F.; Downey, Brian P.; Katzer, D. Scott; Meyer, David J.; McConkie, Thomas O.; Smith, David J.; Nepal, Neeraj

    2016-03-15

    The sensitivity of the surface morphology and microstructure of N-polar-oriented InAlN to variations in composition, temperature, and layer thickness for thin films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been investigated. Lateral compositional inhomogeneity is present in N-rich InAlN films grown at low temperature, and phase segregation is exacerbated with increasing InN fraction. A smooth, step-flow surface morphology and elimination of compositional inhomogeneity can be achieved at a growth temperature 50 °C above the onset of In evaporation (650 °C). A GaN/AlN/GaN/200-nm InAlN heterostructure had a sheet charge density of 1.7 × 10{sup 13 }cm{sup −2} and no degradation in mobility (1760 cm{sup 2}/V s) relative to 15-nm-thick InAlN layers. Demonstration of thick-barrier high-electron-mobility transistors with good direct-current characteristics shows that device quality, thick InAlN layers can be successfully grown by PAMBE.

  18. Magnetism switching and band-gap narrowing in Ni-doped PbTiO{sub 3} thin films

    SciTech Connect

    Zhou, Wenliang; Yu, Lu; Yang, Pingxiong Chu, Junhao; Deng, Hongmei

    2015-05-21

    Ions doping-driven structural phase transition accompanied by magnetism switching and band-gap narrowing effects has been observed in PbTi{sub 1−x}Ni{sub x}O{sub 3−δ} (xPTNO, x = 0.00, 0.06, and 0.33) thin films. With the increase of x, the xPTNO thin films exhibit not only a phase transition from the pseudotetragonal structure to a centrosymmetric cubic structure but also a drastic decrease of grain size. Moreover, the as-grown Ni-doped PbTiO{sub 3} (PTO) thin films show obvious room-temperature ferromagnetism and an increased saturation magnetization with increasing the Ni content, in contrast to undoped PTO, which shows diamagnetism. A bound magnetic polaron model was proposed to understand the observed ferromagnetic behavior of PTO-derived perovskite thin films. Furthermore, the 0.33PTNO thin film presents a narrowed band-gap, much smaller than that of PTO, which is attributed to new states of both the highest occupied molecular orbital and the lowest unoccupied molecular orbital in an electronic structure with the presence of Ni. These findings may open up a route to explore promising perovskite oxides as candidate materials for use in multiferroics and solar-energy devices.

  19. Double Laser for Depth Measurement of Thin Films of Ice

    PubMed Central

    Domingo Beltrán, Manuel; Luna Molina, Ramón; Satorre Aznar, Miguel Ángel; Santonja Moltó, Carmina; Millán Verdú, Carlos

    2015-01-01

    The use of thin films is extensive in both science and industry. We have created an experimental system that allows us to measure the thicknesses of thin films (with typical thicknesses of around 1 µm) in real time without the need for any prior knowledge or parameters. Using the proposed system, we can also measure the refractive index of the thin film material exactly under the same experimental conditions. We have also obtained interesting results with regard to structural changes in the solid substance with changing temperature and have observed the corresponding behavior of mixtures of substances. PMID:26426024

  20. The state of the art of thin-film photovoltaics

    SciTech Connect

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  1. Damage analysis in Al thin films fatigued at ultrahigh frequencies

    NASA Astrophysics Data System (ADS)

    Eberl, Christoph; Spolenak, Ralph; Kraft, Oliver; Kubat, Franz; Ruile, Werner; Arzt, Eduard

    2006-06-01

    A quantitative damage analysis provides insight into the damage mechanisms and lifetimes of aluminum thin films fatigued at ultrahigh frequencies. Surface acoustic wave test devices were used to test continuous and patterned Al thin films up to more than 1014 cycles. The analysis revealed increasing extrusion and void formation concentrated at grain boundaries. This finding and the observed grain growth indicate a high material flux at the grain boundaries induced by the cyclic load. A correlation between device degradation and defect density is established which is explained by a theoretical model. For stress amplitudes as low as 14 MPa lifetime measurements showed no fatigue limit for 420 nm Al thin films.

  2. Effect of morphology on organic thin film transistor sensors.

    PubMed

    Locklin, Jason; Bao, Zhenan

    2006-01-01

    This review provides a general introduction to organic field-effect transistors and their application as chemical sensors. Thin film transistor device performance is greatly affected by the molecular structure and morphology of the organic semiconductor layer. Various methods for organic semiconductor deposition are surveyed. Recent progress in the fabrication of organic thin film transistor sensors as well as the correlation between morphology and analyte response is discussed.

  3. Plasmonics in Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Fahr, Stephan; Rockstuhl, Carsten; Lederer, Falk

    2009-10-01

    Thin film solar cells made of amorphous or microcrystalline silicon provide renewable energy at the benefits of low material consumption. As a drawback, these materials don't offer the high carrier mobilities of their crystalline counterpart. Due to low carrier mobilities, increased process times and material consumption, thick absorbing layers have to be avoided. For maintaining the absorption of the impinging light as high as possible, such thin film devices ask for photon management. Here we show how metallic nanoparticles that sustain the excitation of localized plasmon polaritons placed atop of the solar cell or in between two absorbing layers can increase the efficiency of solar cells. Numerical results for 1D as well as 2D periodic arrangements of nanoparticles will be shown.

  4. Multiferroic oxide thin films and heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  5. Multiferroic oxide thin films and heterostructures

    SciTech Connect

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  6. Layered and Pb-Free Organic-Inorganic Perovskite Materials for Ultraviolet Photoresponse: (010)-Oriented (CH3NH3)2MnCl4 Thin Film.

    PubMed

    Nie, Zhonghao; Yin, Jie; Zhou, Huawei; Chai, Ning; Chen, Baoli; Zhang, Yingtian; Qu, Konggang; Shen, Guodong; Ma, Huiyan; Li, Yuchao; Zhao, Jinsheng; Zhang, Xianxi

    2016-10-07

    Organic-inorganic lead perovskite materials show impressive performance in photovoltaics, photodetectors, light-emitting diodes, lasers, sensors, medical imaging devices, and other applications. Although organic-inorganic lead perovskites have shown good performance in numerous fields, they contain toxic Pb, which is expected to cause environmental pollution in future large-scale applications. Thus, the photoelectric properties of Pb-free organic-inorganic perovskite materials should be developed and studied. In this paper, we report on the photoresponse of Pb-free organic-inorganic hybrid manganese perovskite (CH3NH3)2MnCl4. To the best of our knowledge, this study demonstrates the first time that organic-inorganic hybrid manganese perovskites are used for this type of application. We found that the solution-processed MA2MnCl4 thin film tends to be oriented along the b-axis direction on the TiO2 surface. The evident photoresponse of the FTO/TiO2/MA2MnCl4/carbon electrode devices was observed under 10-30 Hz flashlight frequencies and a 330 nm light beam. This simple, green, and low-cost photoresponsive device is beneficial for the future industrial production of optical recorders and optical memory devices.

  7. Carbon nanotubes as novel spacer materials on silver thin-films for generating superior fluorescence enhancements via surface plasmon coupled emission

    NASA Astrophysics Data System (ADS)

    Mulpur, Pradyumna; Podila, Ramakrishna; Rao, Apparao M.; Kamisetti, Venkataramaniah

    2016-06-01

    In this study, we report the first time implementation of single/multi-walled carbon nanotubes, as novel spacer materials, on a silver (Ag) thin-film based surface plasmon coupled emission (SPCE) platform. The engineered Ag-CNT SPCE substrates enabled the realization of up to ∼10-fold enhancement in fluorescence signal intensity, of the rhodamine b dye. This study addresses the issue that, while many of the biochemical sensing strategies are based on fluorescence, they are all fundamentally limited by the isotropic nature of the phenomenon that results in low signal collection efficiency (<1%). Pursuant to the aim of realizing superior levels of signal sensitivity, we previously reported graphene and C60 as novel spacer materials, and similarly project CNTs in this study as ‘active’ contributors for the amplification of fluorescence signals on the SPCE platform that generates highly directional emission, with very high signal to noise ratios and >50% signal collection efficiency. Considering the easy functionalization of these carbon nano-allotropes, and their high sensitivity; the economical Ag-CNT SPCE platforms can be effectively extended towards sensing applications.

  8. Possibilities Of Optically Non Linear Thin Films

    NASA Astrophysics Data System (ADS)

    De Micheli, Marc; Zyss, Joseph; Azema, Alain

    1983-11-01

    Efficient integrated frequency doubling devices transparent in the visible and near I.R. are demanded by a number of applications. The optimization of both wave interaction configurations and material intrinsic nonlinear susceptibility are successively discussed within this scope. Basic features such as power confinement, interaction length dependence, phase matching techniques, underlying the second harmonic generation conversion rate in bulk and waveguided structures are compared. Undoped Ga As film epitaxied over n+ doped Ga As substrate and TIPE Lithium Lobate waveguides exemplify the possibilities of non linear thin films. The higher non linear susceptibility of certain organic molecular single crys-tals should help raise the efficiency of doubling devices. We report the definition and bulk performances of two non linear organic crystals, namely POM (3-methyl-4 nitropyridine-1-oxyde) and MAP (methyl-(2,4-dinitropheny1)-aminopropanoate) with a figure of merit up to one order of magnitude above that of Li Nb 03. The combination of organic materials and waveguided configuration should lead to a new generation of non linear devices.

  9. VUV thin films, chapter 7

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.

    1993-01-01

    The application of thin film technology to the vacuum ultraviolet (VUV) wavelength region from 120 nm to 230 nm has not been fully exploited in the past because of absorption effects which complicate the accurate determination of the optical functions of dielectric materials. The problem therefore reduces to that of determining the real and imaginary parts of a complex optical function, namely the frequency dependent refractive index n and extinction coefficient k. We discuss techniques for the inverse retrieval of n and k for dielectric materials at VUV wavelengths from measurements of their reflectance and transmittance. Suitable substrate and film materials are identified for application in the VUV. Such applications include coatings for the fabrication of narrow and broadband filters and beamsplitters. The availability of such devices open the VUV regime to high resolution photometry, interferometry and polarimetry both for space based and laboratory applications. This chapter deals with the optics of absorbing multilayers, the determination of the optical functions for several useful materials, and the design of VUV multilayer stacks as applied to the design of narrow and broadband reflection and transmission filters and beamsplitters. Experimental techniques are discussed briefly, and several examples of the optical functions derived for selected materials are presented.

  10. Piezoelectric thin films: an integrated review of transducers and energy harvesting

    NASA Astrophysics Data System (ADS)

    Khan, Asif; Abas, Zafar; Kim, Heung Soo; Oh, Il-Kwon

    2016-05-01

    Piezoelectric thin films offer a number of advantages in various applications, such as high energy density harvesters, a wide dynamic range, and high sensitivity sensors, as well as large displacement and low power consumption actuators. This review covers the available material forms and applications of piezoelectric thin films: lead zirconate titanate (PZT)-based thin films, lead-free piezoelectric thin films, piezopolymer films, cellulose-based electroactive paper (EAPap), and many other thin films used for electromechanical transduction. The electromechanical properties and performances of piezoelectric films are compared and their suitability for particular applications are reported. The key ideas of piezoelectric thin films are reviewed and discussed for sensory and actuation systems, energy harvesting, and medical and acoustic transducers. In the last section, an insight into the future outlook and possibilities for thin film-based devices and their integration into real-world applications is presented.

  11. MISSE 5 Thin Films Space Exposure Experiment

    NASA Technical Reports Server (NTRS)

    Harvey, Gale A.; Kinard, William H.; Jones, James L.

    2007-01-01

    The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

  12. The thin film microwave iris

    NASA Technical Reports Server (NTRS)

    Ramey, R. L.; Landes, H. S.; Manus, E. A.

    1972-01-01

    Development of waveguide iris for microwave coupling applications using thin film techniques is discussed. Production process and installation of iris are described. Iris improves power transmission properties of waveguide window.

  13. Interference Colors in Thin Films.

    ERIC Educational Resources Information Center

    Armstrong, H. L.

    1979-01-01

    Explains interference colors in thin films as being due to the removal, or considerable reduction, of a certain color by destructive inteference that results in the complementary color being seen. (GA)

  14. Method for making surfactant-templated thin films

    DOEpatents

    Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hongyou

    2002-01-01

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  15. Method for making surfactant-templated thin films

    DOEpatents

    Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hong You

    2010-08-31

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  16. Pulse sharpening effects of thin film ferroelectric transmission lines

    NASA Astrophysics Data System (ADS)

    Sleezer, Robert J.

    Advances in material science have resulted in the development of electrically nonlinear high dielectric thin film ferroelectrics, which have led to new opportunities for the creation of novel devices. This dissertation investigated one such device: a low voltage nonlinear transmission line (NLTL). A finite element simulation of ferroelectric transmission lines showed that NLTLs are capable of creating shockwaves. Additionally, if the losses are kept sufficiently low, it was shown that voltage gain should be possible. Furthermore, a method of accounting for material dispersion was developed. Results from simulations including material dispersion showed that temporal solitons might be possible from a continuous ferroelectric based nonlinear transmission line. Fabrication of a thin film ferroelectric NLTL required the growth of a ferroelectric material on a conductive substrate. Barium titanate (BTO), which has been gaining popularity due to its high dielectric constant, strong nonlinearity, and lack of lead, was grown. Molecular beam epitaxy and sol-gel growth were both explored and sol-gel was chosen as the growth method for the final device, in part due to its ability to grow BTO thin films on highly conductive nickel substrates. Samples approximately 330 nm thick were grown by this method. Oxygen vacancies in the as grown BTO films were filled by annealing in low pressure oxygen environments. X-ray diffraction measurements were used to determine an O2 pressure for oxidation that was slightly less than the pressure at which NiO forms to ensure maximum filling of the vacancies in the BTO. Grown samples were successfully shown to have ferroelectric properties. A lumped element transmission line was fabricated using discrete capacitors and inductors with a sample as described above. Test capacitors were fabricated and used to determine the dielectric constant of the BTO thin film. This was used to select capacitor pad sizes and inductor values to create a 50 Ohm line

  17. Electrically tunable multiple Dirac cones in thin films of the (LaO)2(SbSe2)2 family of materials.

    PubMed

    Dong, Xiao-Yu; Wang, Jian-Feng; Zhang, Rui-Xing; Duan, Wen-Hui; Zhu, Bang-Fen; Sofo, Jorge O; Liu, Chao-Xing

    2015-10-13

    Two-dimensional Dirac physics has aroused great interests in condensed matter physics ever since the discovery of graphene and topological insulators. The ability to control the properties of Dirac cones, such as bandgap and Fermi velocity, is essential for various new phenomena and the next-generation electronic devices. On the basis of first-principles calculations and an analytical effective model, we propose a new Dirac system with eight Dirac cones in thin films of the (LaO)2(SbSe2)2 family of materials, which has the advantage in its tunability: the existence of gapless Dirac cones, their positions, Fermi velocities and anisotropy all can be controlled by an experimentally feasible electric field. We identify layer-dependent spin texture induced by spin-orbit coupling as the underlying physical reason for electrical tunability of this system. Furthermore, the electrically tunable quantum anomalous Hall effect with a high Chern number can be realized by introducing magnetization into this system.

  18. Thin Film Synthesis of New Complex Titanates.

    NASA Astrophysics Data System (ADS)

    Salvador, Paul

    2008-03-01

    Thin film deposition methods allow for one to synthesize rationally specific compositions in targeted crystal structures. Because most of the thermodynamic and kinetic variables that control the range of materials that can be synthesized are unknown for specific compounds/processes, epitaxial stabilization and design of artificially layered crystals are driven through empirical investigations. Using examples taken primarily from the family of complex titanates, which exhibit a range of interesting physicochemical behaviors, the thermodynamic and kinetic factors that control materials design using thin film deposition are discussed. The phase competition between the pyrochlore and the (110) layered perovskite structure in the RE2Ti2O7 family (RE = rare-earth, Bi) will be explored, using pulsed laser deposition as a synthesis method. For RE = Gd, Sm, Nd, and La, the phase stability over a wide range of conditions is dictated entirely by substrate choice, indicating that the free energies of the phases are similar enough such that by controlling nucleation one controls the phase formation. In a related fashion, the growth of AETi2O5 films (AE = Ba or Sr) will be discussed with respect to the formation of single-phase films or films that phase separate into AETiO3 and TiO2. The entire Ba1-xSrxTi2O5 series was grown and will be discussed with respect to growth technique (using MBE and PLD) and/or substrate choice. In this case, rock-salt substrates, which are not expected to interact strongly with any phase in the system, allow for the formation of single-phase films. Finally, several examples will be discussed with respect to the (SrO)m(TiO2)n system, which includes the perovskite SrTiO3 and the Ruddlesden-Popper phase Sr2TiO4, grown using layer-by-layer molecular beam epitaxy. The solid phase epitaxial formation of the perovskite SrTiO3 from superlattices of rock-salt SrO and anatase TiO2 is discussed from both a kinetic and thermodynamic perspective by exploring the

  19. Optical, morphological properties and surface energy of the transparent Li4Ti5O12 (LTO) thin film as anode material for secondary type batteries

    NASA Astrophysics Data System (ADS)

    Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan

    2016-03-01

    LTO thin film was deposited for the first time on a glass microscope slide (MS) by RF magnetron sputtering technology. This method has been suitable for preparation of high-quality thin films. The surface properties of the produced film were determined by atomic force microscope (AFM). The surface of the produced film appeared smooth and homogeneous. LTO coated on MS had compact structure and low roughness. A UV-vis spectrophotometer was used to determine intensity of light passing through the samples. Thus, according to the results obtained the produced film was highly transparent. The refractive index of the LTO thin film was presented in a low MSE value by spectroscopic ellipsometry (SE) and it was about 1.5. The optical band gap (E g) was determined by the Tauc method. The produced LTO thin film exhibited a wide band gap semiconductor property with a band gap energy of about 2.95 eV. Finally, the surface free energy of the LTO thin film was calculated from the contact angle measurements using the Lewis acid-base, OWRK/Fowkes, Wu and Zisman methods.

  20. Center for Thin Film Studies

    DTIC Science & Technology

    1991-01-22

    techniques for reducing roughness were developed and tested . Substrate Preparation We deposited Si films by sputtering on a variety of substrates, and...deposition," Mod. Phys. Lett. B 3, 1039 (1989). 41 42 Nd: YAG LASER ABLATION OF BaTiO 3 THIN FILMS *URSULA J. GIBSON, **J.A. RUFFNER,***J.J. MCNALLY...thin films of barium titanate onto a variety of substrates, using picosecond and nanosecond pulsed Nd: YAG lasers. The films were deposited from a hot