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Sample records for monolithic silicon optoelectronic

  1. All-silicon monolithic optoelectronic platform for multi-analyte biochemical sensing

    NASA Astrophysics Data System (ADS)

    Misiakos, K.; Makarona, E.; Raptis, I.; Salapatas, A.; Psarouli, A.; Kakabakos, S.; Petrou, P.; Hoekman, M.; Heideman, R.; Stoffer, R.; Tukkiniemi, K.; Soppanen, M.; Jobst, G.; Nounessis, G.; Budkowski, A.; Rysz, J.

    2013-05-01

    Despite the advances in optical biosensors, the existing technological approaches still face two major challenges: the inherent inability of most sensors to integrate the optical source in the transducer chip, and the need to specifically design the optical transducer per application. In this work, the development of a radical optoelectronic platform is demonstrated based on a monolithic optocoupler array fabricated by standard Si-technology and suitable for multi-analyte detection. The platform has been specifically designed biochemical sensing. In the all-silicon array of transducers, each optocoupler has its own excitation source, while the entire array share a common detector. The light emitting devices (LEDs) are silicon avalanche diodes biased beyond their breakdown voltage and emit in the VIS-NIR part of the spectrum. The LEDs are coupled to individually functionalized optical transducers that converge to a single detector for multiplexed operation. The integrated nature of the basic biosensor scheme and the ability to functionalize each transducer independently allows for the development of miniaturized optical transducers tailored towards multi-analyte tests. The monolithic arrays can be used for a plethora of bio/chemical interactions becoming thus a versatile analytical tool. The platform has been successfully applied in bioassays and binding in a real-time and label-free format and is currently being applied to ultra-sensitive food safety applications.

  2. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  3. A bioanalytical microsystem for protein and DNA sensing based on a monolithic silicon optoelectronic transducer

    NASA Astrophysics Data System (ADS)

    Misiakos, K.; Petrou, P. S.; Kakabakos, S. E.; Ruf, H. H.; Ehrentreich-Förster, E.; Bier, F. F.

    2005-01-01

    A bioanalytical microsystem that is based on a monolithic silicon optical transducer and a microfluidic module and it is appropriate for real-time sensing of either DNA or protein analytes is presented. The optical transducer monolithically integrates silicon avalanche diodes as light sources, silicon nitride optical fibers and detectors and efficiently intercouples these optical elements through a self-alignment technique. After hydrophilization and silanization of the transducer surface, the biomolecular probes are immobilized through physical adsorption. Detection is performed through reaction of the immobilized biomolecules with gold nanoparticle labeled counterpart molecules. The binding of these molecules within the evanescent field at the surface of the optical fiber cause attenuated total reflection of the waveguided modes and reduction of the detector photocurrent. Using the developed microsystem, determination of single nucleotide polymorphism (SNP) in the gene of the human phenol sulfotransferase SULT1A1 was achieved. Full-matching hybrid resulted in 4-5 times higher signals compared to the mismatched hybrid after hybridization and dissociation processes. The protein sensing abilities of the developed microsystem were also investigated through a non-competitive assay for the determination of the MB isoform of creatine kinase enzyme (CK-MB) that is a widely used cardiac marker.

  4. Optoelectronic properties of nanocrystalline silicon composites

    NASA Astrophysics Data System (ADS)

    Posada Marin, Yury

    The interest in silicon at the nano-scale level has gained great impetus since the discovery in the last decade of its photoluminescence properties at room temperature; this characteristic has opened up the possibility of creating microelectronics with optical integrated capabilities and has been the main motivation for new research in photonics and optoelectronics applications. To date, the most cost effective technique used to make silicon nanoparticles is the electroetching of silicon wafers in HF electrolytes solutions; this method generates hydrogen-passivated particles by the electrochemical dispersion of bulk silicon. The ultrasonic fracturing of porous silicon structures produces a colloidal suspension of particles in a large variety of organic solvents that can be readily used as photoluminescent tags and to create new optical materials. Silicon nanoparticles can be also produced by sputtering Si-SiO 2, a technique that can render films with distributions of silicon crystallite sizes. This thesis presents the results of an optoelectronic study of nanocrystalline silicon produced by chemical electroetching of silicon wafers and RF-co sputtering of Si-SiO2. Herein are presented the experimental contributions of this work: the development of two novel materials: silica gel monoliths and microfilms doped with porous silicon nanoclusters that have showed blue shifted photoluminescence emission with intensities over five times higher than the original intensity from the native material used for the sol-gel preparation; the enhancement of the photoluminescence of porous silicon substrates by silica gel spin coating. Finally, through a charge transport study of nanocrystalline silicon in Si-SiO2 a relationship between the photoluminescence with the silicon crystallites sizes and concentrations is demonstrated and analyzed along with the diffusion length.

  5. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-01-05

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  6. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-03-22

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  7. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  8. InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

    NASA Technical Reports Server (NTRS)

    Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

    1995-01-01

    A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

  9. Neutron spectrometry with a monolithic silicon telescope.

    PubMed

    Agosteo, S; D'Angelo, G; Fazzi, A; Para, A Foglio; Pola, A; Zotto, P

    2007-01-01

    A neutron spectrometer was set-up by coupling a polyethylene converter with a monolithic silicon telescope, consisting of a DeltaE and an E stage-detector (about 2 and 500 microm thick, respectively). The detection system was irradiated with monoenergetic neutrons at INFN-Laboratori Nazionali di Legnaro (Legnaro, Italy). The maximum detectable energy, imposed by the thickness of the E stage, is about 8 MeV for the present detector. The scatter plots of the energy deposited in the two stages were acquired using two independent electronic chains. The distributions of the recoil-protons are well-discriminated from those due to secondary electrons for energies above 0.350 MeV. The experimental spectra of the recoil-protons were compared with the results of Monte Carlo simulations using the FLUKA code. An analytical model that takes into account the geometrical structure of the silicon telescope was developed, validated and implemented in an unfolding code. The capability of reproducing continuous neutron spectra was investigated by irradiating the detector with neutrons from a thick beryllium target bombarded with protons. The measured spectra were compared with data taken from the literature. Satisfactory agreement was found. PMID:17522037

  10. Growth and characterization of silicon-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Filios, Adam A.

    Photonics, a blending of optics and electronics, has emerged as one of the world's most rapidly developing fields. Along with microelectronics, they constitute the core technologies of the information industry, and their advances are complementing each other in the tasks of the acquisition, transmission, storage, and processing of increasing amounts of information. Microelectronic device integration has progressed to the point that complete "systems-on-the-chip" have been realized. Photonic materials need to be integrated with standard electronic circuits for the implementation of the next generation optoelectronic "super-chip" where both electrons and photons participate in the transmission and processing of information. Silicon is the cornerstone material in conventional VLSI systems. However, having a relatively small and indirect fundamental energy band-gap, silicon is an inefficient lightemitter. On the other hand, direct integration of III-V photonic materials on a silicon chip is still very problematic. Squeezing light out of silicon itself appears to be an attractive alternative. Light emission from silicon is an important fundamental issue with enormous technological implications. In this work we explore several strategies towards developing silicon based optoelectronic devices. Porous silicon, a material produced by electrochemically etching silicon in aqueous hydrofluoric acid solutions, generated great interest in the early 1990s when it was shown to exhibit relatively bright, room temperature, visible photoluminescence. However, having a poor surface morphology, the material is fragile and chemically unstable leading to degradation of light emission and preventing integration with silicon processing technology. With the development of the epitaxially grown crystalline-Si/O superlattice, we attempt to overcome the morphological problems of porous silicon, retaining its light emission characteristics. Our multilayer c-Si/O device consists of thin silicon

  11. Monolithic optoelectronic chip for label-free multi-analyte sensing applications

    NASA Astrophysics Data System (ADS)

    Raptis, Ioannis; Makarona, Eleni; Petrou, Panagiota; Kakabakos, Sotiris E.; Misiakos, Konstantinos

    2014-03-01

    The existing technological approaches employed in the realization of optical sensors still face two major challenges: the inherent inability of most sensors to integrate the optical source in the transducer chip, and the need to specifically design the optical transducer per application. We have introduced a unique Optoelectronic chip that consists of a series of light emitting diodes (LEDs) coupled to silicon nitride waveguides allowing for multi-analyte detection. Each optocoupler is structured as Broad-Band Mach-Zehnder Interferometer and has its own excitation source and can either have its own detector or the entire array can share a common detector. The light emitting devices (LEDs) are silicon avalanche diodes which when biased beyond their breakdown voltage emit in the VIS-NIR part of the spectrum. The optoelectronic chip is fabricated by standard silicon technology allowing for potential mass production in silicon foundries. The integrated nature of the optoelectronic chip and the ability to functionalize each transducer independently allows for the development of miniaturized optical transducers tailored towards multi-analyte tests. The platform has been successfully applied in bioassays and binding assays monitoring in a real-time and label-free format and is currently being applied to ultra-sensitive food safety applications.

  12. Energetic Beam Processing of Silicon to Engineer Optoelectronically Active Defects

    NASA Astrophysics Data System (ADS)

    Recht, Daniel

    This thesis explores ways to use ion implantation and nanosecond pulsed laser melting, both energetic beam techniques, to engineer defects in silicon. These defects are chosen to facilitate the use of silicon in optoelectronic applications for which its indirect bandgap is not ideal. Chapter 2 develops a kinetic model for the use of point defects as luminescence centers for light-emitting diodes and demonstrates an experimental procedure capable of high-throughput screening of the electroluminescent properties of such defects. Chapter 3 discusses the dramatic change in optical absorption observed in silicon highly supersaturated (i.e., hyperdoped) with the chalcogens sulfur, selenium, and tellurium and reports the first measurements of the optical absorption of such materials for photon energies greater than the bandgap of silicon. Chapter 3 examines the use of silicon hyperdoped with chalcogens in light detectors and concludes that while these devices display strong internal gain that is coupled to a particular type of surface defect, hyperdoping with chalcogens does not lead directly to measurable sub-bandgap photoconductivity. Chapter 4 considers the potential for Silicon to serve as the active material in an intermediate-band solar cell and reports experimental progress on two proposed approaches for hyperdoping silicon for this application. The main results of this chapter are the use of native-oxide etching to control the surface evaporation rate of sulfur from silicon and the first synthesis of monocrystalline silicon hyperdoped with gold.

  13. Integration of InP-based optoelectronics with silicon waveguides

    NASA Astrophysics Data System (ADS)

    Aalto, Timo; Harjanne, Mikko; Kapulainen, Markku; Ylinen, Sami; Ollila, Jyrki; Vilokkinen, Ville; Mörl, Ludwig; Möhrle, Martin; Hamelin, Régis

    2009-02-01

    Compound semiconductors provide state-of-the-art performance in optoelectronics, while silicon-on-insulator (SOI) is an ideal platform for many passive functions in integrated optics. By combining them one can realise optical devices with high performance and low cost. This paper discusses the various applications and technologies for integrating InP chips with SOI waveguides. Bonding of lasers, SOA arrays and detectors for practical applications is described. Experimental results are given for visually aligned thermo-compression bonding and self-aligned flip-chip bonding with Indium bumps. Flip-chip bonding is reported directly on SOI chips, as well as on a separate silicon-optical-bench.

  14. Laser hyperdoping silicon for enhanced infrared optoelectronic properties

    NASA Astrophysics Data System (ADS)

    Warrender, Jeffrey M.

    2016-09-01

    Pulsed laser melting and rapid solidification have attracted interest for decades as a method to achieve impurity concentrations in silicon orders of magnitude above the equilibrium solubility limit. The incorporation of sulfur into silicon using this technique led to the observation of strong broadband infrared absorption in the resulting material. This observation, combined with interest in impurity band optoelectronic device concepts, has resulted in renewed interest in laser techniques for achieving high impurity concentrations. In this paper, I review the literature that led to the present understanding of laser hyperdoping and provide a summary of the optical and optoelectronic measurements made on sulfur hyperdoped silicon to date. I mention recent work exploring transition metal impurities and discuss how considerations discovered in early solidification and later rapid solidification work inform our approaches to kinetically trapping such impurities. I also provide a simplified picture of how a laser hyperdoping process is typically carried out, as an entry point for an experimentalist seeking to fabricate such layers.

  15. Development of monolithically integrated silicon-film modules

    NASA Astrophysics Data System (ADS)

    Rand, J. A.; Cotter, J. E.; Ingram, A. E.; Lampros, T. H.; Ruffins, T. R.; Hall, R. B.; Barnett, A. M.

    1992-12-01

    Silicon-Film Product III is being developed into a low cost, stable device for large scale terrestrial power applications. The Product III structure is a thin (<100 μm) polycrystalline silicon layer on a non-conductive supporting ceramic substrate as illustrated in Figure 1. The presence of the substrate allows cells to be isolated and interconnected monolithically. The long term goal for the product is over 18% conversion efficiency on areas greater than 1200 cm2. The high efficiency will be based on polycrystalline thin silicon incorporated into a light trapping structure with a passivated back surface. Short term goals are focused on the development of large area ceramics, a monolithic interconnection process, and fabricating 100 cm2 solar cells.

  16. Monolithically Integrated High-β Nanowire Lasers on Silicon.

    PubMed

    Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

    2016-01-13

    Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects. PMID:26618638

  17. Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer.

    PubMed

    Song, Junfeng; Luo, Xianshu; Tu, Xiaoguang; Jia, Lianxi; Fang, Qing; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

    2014-08-11

    We propose a novel three-dimensional (3D) monolithic optoelectronic integration platform. Such platform integrates both electrical and photonic devices in a bulk silicon wafer, which eliminates the high-cost silicon-on-insulator (SOI) wafer and is more suitable for process requirements of electronic and photonic integrated circuits (ICs). For proof-of-concept, we demonstrate a three-dimensional photodetector and WDM receiver system. The Ge is grown on a 8-inch bulk silicon wafer while the optical waveguide is defined in a SiN layer which is deposited on top of it, with ~4 µm oxide sandwiched in between. The light is directed to the Ge photodetector from the SiN waveguide vertically by using grating coupler with a Aluminum mirror on top of it. The measured photodetector responsivity is ~0.2 A/W and the 3-dB bandwidth is ~2 GHz. Using such vertical-coupled photodetector, we demonstrated an 8-channel receiver by integrating a 1 × 8 arrayed waveguide grating (AWG). High-quality optical signal detection with up to 10 Gbit/s data rate is demonstrated, suggesting a 80 Gbit/s throughput. Such receiver can be applied to on-chip optical interconnect, DRAM interface, and telecommunication systems.

  18. Ultracompact 100 Gbps coherent receiver monolithically integrated on silicon

    NASA Astrophysics Data System (ADS)

    Tu, Zhijuan; Gong, Pan; Zhou, Zhiping; Wang, Xingjun

    2016-04-01

    This work describes an ultracompact coherent receiver monolithically integrated on silicon. The coherent receiver integrates one 1D grating coupler, one 2D grating coupler, two 90° hybrids, and eight Ge photodetectors in an area of only 1.3 × 1.4 mm2, which is about half the size of the smallest previously reported receiver. The design and performances of the components and the integrated coherent receiver are presented. The receiving of 100 Gbps polarization-division-multiplexed quadrature phase-shift keying (PDM-QPSK) signals is also successfully demonstrated.

  19. Assessment of goat milk adulteration with a label-free monolithically integrated optoelectronic biosensor.

    PubMed

    Angelopoulou, Μichailia; Botsialas, Athanasios; Salapatas, Alexandros; Petrou, Panagiota S; Haasnoot, Willem; Makarona, Eleni; Jobst, Gerhard; Goustouridis, Dimitrios; Siafaka-Kapadai, Athanasia; Raptis, Ioannis; Misiakos, Konstantinos; Kakabakos, Sotirios E

    2015-05-01

    The label-free detection of bovine milk in goat milk through a miniaturized optical biosensor is presented. The biosensor consists of ten planar silicon nitride waveguide Broad-Band Mach-Zehnder interferometers (BB-MZIs) monolithically integrated and self-aligned with their respective silicon LEDs on the same Si chip. The BB-MZIs were transformed to biosensing transducers by functionalizing their sensing arm with bovine k-casein. Measurements were performed by continuously recording the transmission spectra of each interferometer through an external spectrometer. The amount of bovine milk in goat milk was determined through a competitive immunoassay by passing over the sensor mixtures of anti-k-casein antibodies with the calibrators or the samples. The output spectra of each BB-MZI recorded during the reaction were subjected to Discrete Fourier Transform in order to convert the observed spectral shifts to phase shifts in the wavenumber domain. The method had a detection limit of 0.04 % (v/v) bovine milk in goat milk, dynamic range 0.1-1.0 % (v/v), recoveries 93-110 %, and intra- and inter-assay coefficients of variation less than 12 and 15 %, respectively. The proposed biosensor compared well in terms of analytical performance with a competitive ELISA developed using the same monoclonal antibodies. Nevertheless, the duration of the biosensor assay was 10 min whereas the ELISA required 2 h. Thus, the fast and sensitive determinations along with the small size of the sensor make it ideal for incorporation into portable devices for assessment of goat or ewe's milk adulteration with bovine milk at the point-of-need.

  20. Monolithic amorphous silicon modules on continuous polymer substrate

    SciTech Connect

    Grimmer, D.P. )

    1992-03-01

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  1. 112-Gb/s monolithic PDM-QPSK modulator in silicon.

    PubMed

    Dong, Po; Xie, Chongjin; Chen, Long; Buhl, Lawrence L; Chen, Young-Kai

    2012-12-10

    We present a monolithic dual-polarization quadrature phase-shift keying (QPSK) modulator based on a silicon photonic integrated circuit (PIC). This PIC consists of four high-speed silicon modulators, a polarization rotator, and a polarization beam combiner. A 112-Gb/s polarization-division-multiplexed (PDM) QPSK modulation is successfully demonstrated.

  2. Prediction of Silicon-Based Layered Structures for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Luo, Wei; Ma, Yanming; Gong, Xingao; Xiang, Hongjun; CCMG Team

    2015-03-01

    A method based on the particle swarm optimization (PSO) algorithm is presented to design quasi-two-dimensional (Q2D) materials. With this development, various single-layer and bi-layer materials in C, Si, Ge, Sn, and Pb were predicted. A new Si bi-layer structure is found to have a much-favored energy than the previously widely accepted configuration. Both single-layer and bi-layer Si materials have small band gaps, limiting their usages in optoelectronic applications. Hydrogenation has therefore been used to tune the electronic and optical properties of Si layers. We discover two hydrogenated materials of layered Si8H2andSi6H2 possessing quasi-direct band gaps of 0.75 eV and 1.59 eV, respectively. Their potential applications for light emitting diode and photovoltaics are proposed and discussed. Our study opened up the possibility of hydrogenated Si layered materials as next-generation optoelectronic devices.

  3. Behavior of cyclic fatigue cracks in monolithic silicon nitride

    SciTech Connect

    Gilbert, C.J.; Ritchie, R.O.; Dauskardt, R.H.

    1995-09-01

    Cyclic fatigue-crack propagation behavior in monolithic silicon nitride is characterized in light of current fatigue-crack growth models for ceramics toughened by grain-bridging mechanisms, with specific emphasis on the role of load ratio. Such models are based on diminished crack-tip shielding in the crack wave under cyclic loads due to frictional-wear degradation of the grain-bridging zone. The notion of cyclic crack growth promoted by diminished shielding is seen to be consistent with measured (long-crack) growth rates, fractography, in situ crack-profile analyses, and measurements of back-face strain compliance. Growth rates are found to display a much larger dependence on the maximum applied stress intensity, K{sub max}, than on the applied stress-intensity range, {Delta}K, with behavior described by the relationship da/dN {proportional_to} K{sub max}{sup 29} {Delta}K. Fatigue thresholds similarly exhibit a marked dependence on the load ratio, R = K{sub min}/K{sub max}; such effects are shown to be inconsistent with traditional models of fatigue-crack closure. In particular, when characterized in terms of K{sub max}, growth rates below {approximately} 10{sup {minus}9} m/cycle exhibit an inverse dependence on load ratio, an observation which is consistent with the grain-bridging phenomenon; specifically, with increasing R, the sliding distance between the grain bridges is decreased, leading to less frictional wear, and hence less degradation in shielding, per loading cycle. The microstructural origins of such behavior are discussed.

  4. Silicon microbench heater elements for packaging opto-electronic devices

    SciTech Connect

    Combs, R.; Keiser, P.; Kleint, K.; Pocha, M.; Patterson, F.; Strand, O.T.

    1995-09-01

    Examples are presented of the application of Lawrence Livermore National Laboratory`s expertise in photonics packaging. Several examples of packaged devices will be described. Particular attention is given to silicon microbenches incorporating heaters and their use in semiconductor optical amplifier fiber pigtailing and packaging.

  5. Self-assembled III-V quantum dots: potential for silicon optoelectronics

    NASA Technical Reports Server (NTRS)

    Leon, R.

    2001-01-01

    The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

  6. Development of large-area monolithically integrated silicon-film photovoltaic modules

    NASA Astrophysics Data System (ADS)

    Rand, J. A.; Bacon, C.; Cotter, J. E.; Lampros, T. H.; Ingram, A. E.; Ruffins, T. R.; Hall, R. B.; Barnett, A. M.

    1992-07-01

    This report describes work to develop Silicon-Film Product 3 into a low-cost, stable device for large-scale terrestrial power applications. The Product 3 structure is a thin (less than 100 micron) polycrystalline silicon layer on a non-conductive supporting ceramic substrate. The presence of the substrate allows cells to be isolated and interconnected monolithically in various series/parallel configurations. The long-term goal for the product is efficiencies over 18 percent on areas greater than 1200 cm(exp 2). The high efficiency is made possible through the benefits of using polycrystalline thin silicon incorporated into a light-trapping structure with a passivated back surface. Short-term goals focused on the development of large-area ceramics, a monolithic interconnection process, and 100 cm(exp 2) solar cells. Critical elements of the monolithically integrated device were developed, and an insulating ceramic substrate was developed and tested. A monolithic interconnection process was developed that will isolate and interconnect individual cells on the ceramic surface. Production-based, low-cost process steps were used, and the process was verified using free-standing silicon wafers to achieve an open-circuit voltage (V(sub oc)) of 8.25 V over a 17-element string. The overall efficiency of the silicon-film materials was limited to 6percent by impurities. Improved processing and feedstock materials are under investigation.

  7. Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides.

    PubMed

    Agazzi, Laura; Bradley, Jonathan D B; Dijkstra, Meindert; Ay, Feridun; Roelkens, Gunther; Baets, Roel; Wörhoff, Kerstin; Pollnau, Markus

    2010-12-20

    Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

  8. A new silicon phase with direct band gap and novel optoelectronic properties

    SciTech Connect

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-09-23

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications.

  9. A new silicon phase with direct band gap and novel optoelectronic properties

    DOE PAGES

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-09-23

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising materialmore » for optoelectronic applications.« less

  10. A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties

    PubMed Central

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-01-01

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications. PMID:26395926

  11. Nanophotonics for Optoelectronic Devices: Extrinsic Silicon Photonic Receivers and Organic Photovoltaics

    NASA Astrophysics Data System (ADS)

    Grote, Richard R.

    The demand for high data rate communications and renewable energy sources has led to new materials and platforms for optoelectronic devices, which require nanometer scale feature sizes. Devices that operate in the visible and near-infrared commonly have active areas with dimensions on the order of the diffraction limit ( l2n , where lambda is the free space wavelength and n is the index of refraction), for which the ray optics modeling techniques and bulk focusing optics traditionally used in optoelectronic device design are no longer applicable. In this subwavelength regime, nanophotonic light-trapping strategies are required to localize electromagnetic fields in the active area. This dissertation details the application of nanophotonics to two optoelectronic systems: extrinsic photodetectors for silicon photonics and light-trapping in organic photovoltaics. Error-free reception of 10 Gb/s data at lambda = 1.55 mum is demonstrated with a Si+ ion-implanted silicon waveguide photodiode. To mitigate the relatively small absorption coefficient of ion-implanted silicon, resonant cavity enhancement using in-line Fabry-Perot and 1D photonic crystal cavities, as well as slow light enhancement using a coupled resonator optical waveguide are discussed. The extension of these photodiodes to the mid-infrared is demonstrated using Zn+ implantation to detect over a range of lambda = 2.2-2.4 mum, and a new method for modulation and switching in integrated optics by using interference in a resonant cavity, termed coherent perfect loss (CPL), is presented. Finally, the upper limit of nanophotonic light trapping is derived for organic photovoltaics with material anisotropy included.

  12. Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

    PubMed

    Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

    2016-03-01

    Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links.

  13. Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

    PubMed

    Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

    2016-03-01

    Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links. PMID:26901448

  14. Light coupling between vertical III-As nanowires and planar Si photonic waveguides for the monolithic integration of active optoelectronic devices on a Si platform.

    PubMed

    Giuntoni, Ivano; Geelhaar, Lutz; Bruns, Jürgen; Riechert, Henning

    2016-08-01

    We present a new concept for the optical interfacing between vertical III-As nanowires and planar Si waveguides. The nanowires are arranged in a two-dimensional array which forms a grating structure on top of the waveguide. This grating enables light coupling in both directions between the components made from the two different material classes. Numerical simulations show that this concept permits a light extraction efficiency from the waveguide larger than 45% and a light insertion efficiency larger than 35%. This new approach would allow the monolithic integration of nanowire-based active optoelectronics devices, like photodetectors and light sources, on the Si photonics platform.

  15. Light coupling between vertical III-As nanowires and planar Si photonic waveguides for the monolithic integration of active optoelectronic devices on a Si platform.

    PubMed

    Giuntoni, Ivano; Geelhaar, Lutz; Bruns, Jürgen; Riechert, Henning

    2016-08-01

    We present a new concept for the optical interfacing between vertical III-As nanowires and planar Si waveguides. The nanowires are arranged in a two-dimensional array which forms a grating structure on top of the waveguide. This grating enables light coupling in both directions between the components made from the two different material classes. Numerical simulations show that this concept permits a light extraction efficiency from the waveguide larger than 45% and a light insertion efficiency larger than 35%. This new approach would allow the monolithic integration of nanowire-based active optoelectronics devices, like photodetectors and light sources, on the Si photonics platform. PMID:27505805

  16. Optoelectronic properties of Black-Silicon generated through inductively coupled plasma (ICP) processing for crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Hirsch, Jens; Gaudig, Maria; Bernhard, Norbert; Lausch, Dominik

    2016-06-01

    The optoelectronic properties of maskless inductively coupled plasma (ICP) generated black silicon through SF6 and O2 are analyzed by using reflection measurements, scanning electron microscopy (SEM) and quasi steady state photoconductivity (QSSPC). The results are discussed and compared to capacitively coupled plasma (CCP) and industrial standard wet chemical textures. The ICP process forms parabolic like surface structures in a scale of 500 nm. This surface structure reduces the average hemispherical reflection between 300 and 1120 nm up to 8%. Additionally, the ICP texture shows a weak increase of the hemispherical reflection under tilted angles of incidence up to 60°. Furthermore, we report that the ICP process is independent of the crystal orientation and the surface roughness. This allows the texturing of monocrystalline, multicrystalline and kerf-less wafers using the same parameter set. The ICP generation of black silicon does not apply a self-bias on the silicon sample. Therefore, the silicon sample is exposed to a reduced ion bombardment, which reduces the plasma induced surface damage. This leads to an enhancement of the effective charge carrier lifetime up to 2.5 ms at 1015 cm-3 minority carrier density (MCD) after an atomic layer deposition (ALD) with Al2O3. Since excellent etch results were obtained already after 4 min process time, we conclude that the ICP generation of black silicon is a promising technique to substitute the industrial state of the art wet chemical textures in the solar cell mass production.

  17. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

    PubMed

    Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-15

    A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.

  18. Towards monolithic integration of germanium light sources on silicon chips

    NASA Astrophysics Data System (ADS)

    Saito, Shinichi; Zaher Al-Attili, Abdelrahman; Oda, Katsuya; Ishikawa, Yasuhiko

    2016-04-01

    Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

  19. Monolithic III-V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects

    NASA Astrophysics Data System (ADS)

    Li, Ning; Liu, Ke; Sorger, Volker J.; Sadana, Devendra K.

    2015-09-01

    Monolithic integration of III-V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We propose and investigate plasmonic III-V nanolasers as monolithically integrated light source on Si chips due to many advantages. First, these III-V plasmonic light sources can be directly grown on Si substrates free of crystallographic defects due to the submicron cavity footprint (250 nm × 250 nm) being smaller than the average defect free region size of the heteroepitaxial III-V material on Si. Secondly, the small lateral and vertical dimensions facilitate process co-integration with Si complementary metal-oxide-semiconductor (CMOS) in the front end of the line. Thirdly, combining with monolithically integrated CMOS circuits with low device capacitance and parasitic capacitance, the nano-cavity optoelectronic devices consume orders of magnitude less power than the conventional lasers and reduce the energy consumption. Fourthly, the modulation bandwidth of the plasmonic light-sources is enhanced to significantly higher than conventional lasers due to enhanced photon state density and transition rate. In addition, we show that these device performance are very robust after taking into account the surface recombination and variations in device fabrication processes.

  20. Monolithic III–V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects

    PubMed Central

    Li, Ning; Liu, Ke; Sorger, Volker J.; Sadana, Devendra K.

    2015-01-01

    Monolithic integration of III–V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We propose and investigate plasmonic III–V nanolasers as monolithically integrated light source on Si chips due to many advantages. First, these III–V plasmonic light sources can be directly grown on Si substrates free of crystallographic defects due to the submicron cavity footprint (250 nm × 250 nm) being smaller than the average defect free region size of the heteroepitaxial III–V material on Si. Secondly, the small lateral and vertical dimensions facilitate process co-integration with Si complementary metal-oxide-semiconductor (CMOS) in the front end of the line. Thirdly, combining with monolithically integrated CMOS circuits with low device capacitance and parasitic capacitance, the nano-cavity optoelectronic devices consume orders of magnitude less power than the conventional lasers and reduce the energy consumption. Fourthly, the modulation bandwidth of the plasmonic light-sources is enhanced to significantly higher than conventional lasers due to enhanced photon state density and transition rate. In addition, we show that these device performance are very robust after taking into account the surface recombination and variations in device fabrication processes. PMID:26369698

  1. Surface acoustic wave/silicon monolithic sensor/processor

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.; Nouhi, A.; Kilmer, R.; Fathimulla, M. A.; Mehter, E.

    1983-01-01

    A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

  2. Measurement of Casimir Force between Monolithic Silicon Microstructures

    NASA Astrophysics Data System (ADS)

    Tang, Lu; Chan, Ho Bun; Zou, Jie; Marcet, Zsolt; Bao, Yiliang; Rodriguez, Alejandro; Reid, Homer; McCauley, Alexander; Johnson, Steven; Kravchenko, Ivan

    2014-03-01

    We present measurements of the Casimir force between silicon components in a near-planar geometry. We create the device from a silicon-on-insulator wafer using microfabrication. It contains a force-sensing micromechanical beam and an electrostatic comb actuator for controlling the distance. The two lithographically-defined micromechanical components are on the same silicon substrate and are automatically aligned after fabrication. Thus, we can achieve a high degree of parallelism between the two interacting surfaces. We employ a magneto-motive technique to measure the shift in the resonance frequency of the force sensing beam. Periodic Lorentz forces are exerted on the beam when an ac current is applied in a perpendicular magnetic field. As the movable electrode is pushed towards the silicon beam by the comb drives, the Casimir force increases. The force gradient is proportional to the resonance frequency shift of the beam. After the calibration using electrostatic forces and balancing the residual voltage, we measure the Casimir force gradient. Our results are in reasonable agreement with theoretical calculations, considering possible contributions of patch potentials. Apart from providing a compact platform for Casimir force measurements, this scheme also opens new opportunities for the measurement of Casimir force in complex geometries.

  3. Surface acoustic waves/silicon monolithic sensor processor

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.; Fathimulla, M. A.; Mehter, E. A.

    1981-01-01

    Progress is reported in the creation of a two dimensional Fourier transformer for optical images based on the zinc oxide on silicon technology. The sputtering of zinc oxide films using a micro etch system and the possibility of a spray-on technique based on zinc chloride dissolved in alcohol solution are discussed. Refinements to techniques for making platinum silicide Schottky barrier junctions essential for constructing the ultimate convolver structure are described.

  4. Optoelectronic optimization of mode selective converter based on liquid crystal on silicon

    NASA Astrophysics Data System (ADS)

    Wang, Yongjiao; Liang, Lei; Yu, Dawei; Fu, Songnian

    2016-03-01

    We carry out comprehensive optoelectronic optimization of mode selective converter used for the mode division multiplexing, based on liquid crystal on silicon (LCOS) in binary mode. The conversion error of digital-to-analog (DAC) is investigated quantitatively for the purpose of driving the LCOS in the application of mode selective conversion. Results indicate the DAC must have a resolution of 8-bit, in order to achieve high mode extinction ratio (MER) of 28 dB. On the other hand, both the fast axis position error of half-wave-plate (HWP) and rotation angle error of Faraday rotator (FR) have negative influence on the performance of mode selective conversion. However, the commercial products provide enough angle error tolerance for the LCOS-based mode selective converter, taking both of insertion loss (IL) and MER into account.

  5. On-chip generation and demultiplexing of quantum correlated photons using a silicon-silica monolithic photonic integration platform.

    PubMed

    Matsuda, Nobuyuki; Karkus, Peter; Nishi, Hidetaka; Tsuchizawa, Tai; Munro, William J; Takesue, Hiroki; Yamada, Koji

    2014-09-22

    We demonstrate the generation and demultiplexing of quantum correlated photons on a monolithic photonic chip composed of silicon and silica-based waveguides. Photon pairs generated in a nonlinear silicon waveguide are successfully separated into two optical channels of an arrayed-waveguide grating fabricated on a silica-based waveguide platform.

  6. Design and characterization of ultra-stretchable monolithic silicon fabric

    SciTech Connect

    Rojas, J. P.; Hussain, M. M.; Arevalo, A.; Foulds, I. G.

    2014-10-13

    Stretchable electronic systems can play instrumental role for reconfigurable macro-electronics such as distributed sensor networks for wearable and bio-integrated electronics. Typically, polymer composite based materials and its deterministic design as interconnects are used to achieve such systems. Nonetheless, non-polymeric inorganic silicon is the predominant material for 90% of electronics. Therefore, we report the design and fabrication of an all silicon based network of hexagonal islands connected through spiral springs to form an ultra-stretchable arrangement for complete compliance to highly asymmetric shapes. Several design parameters are considered and their validation is carried out through finite element analysis. The fabrication process is based on conventional microfabrication techniques and the measured stretchability is more than 1000% for single spirals and area expansions as high as 30 folds in arrays. The reported method can provide ultra-stretchable and adaptable electronic systems for distributed network of high-performance macro-electronics especially useful for wearable electronics and bio-integrated devices.

  7. Performance of a TiN-coated monolithic silicon pin-diode array under mechanical stress

    NASA Astrophysics Data System (ADS)

    VanDevender, B. A.; Bodine, L. I.; Myers, A. W.; Amsbaugh, J. F.; Howe, M. A.; Leber, M. L.; Robertson, R. G. H.; Tolich, K.; Van Wechel, T. D.; Wall, B. L.

    2012-05-01

    The Karlsruhe Tritium Neutrino Experiment (KATRIN) will detect tritium β-decay electrons that pass through its electromagnetic spectrometer with a highly segmented monolithic silicon pin-diode focal-plane detector (FPD). This pin-diode array will be on a single piece of 500-μm-thick silicon, with contact between titanium nitride (TiN)-coated detector pixels and front-end electronics made by spring-loaded pogo pins. The pogo pins will exert a total force of up to 50 N on the detector, deforming it and resulting in mechanical stress up to 50 MPa in the silicon bulk. We have evaluated a prototype pin-diode array with a pogo-pin connection scheme similar to the KATRIN FPD. We find that pogo pins make good electrical contact to TiN and observe no effects on detector resolution or reverse-bias leakage current which can be attributed to mechanical stress.

  8. Towards optical optimization of planar monolithic perovskite/silicon-heterojunction tandem solar cells

    NASA Astrophysics Data System (ADS)

    Albrecht, Steve; Saliba, Michael; Correa-Baena, Juan-Pablo; Jäger, Klaus; Korte, Lars; Hagfeldt, Anders; Grätzel, Michael; Rech, Bernd

    2016-06-01

    Combining inorganic–organic perovskites and crystalline silicon into a monolithic tandem solar cell has recently attracted increased attention due to the high efficiency potential of this cell architecture. Promising results with published efficiencies above 21% have been reported so far. To further increase the device performance, optical optimizations enabling device related guidelines are highly necessary. Here we experimentally show the optical influence of the ITO thickness in the interconnecting layer and fabricate an efficient monolithic tandem cell with a reduced ITO layer thickness that shows slightly improved absorption within the silicon sub-cell and a stabilized power output of 17%. Furthermore we present detailed optical simulations on experimentally relevant planar tandem stacks to give practical guidelines to reach efficiencies above 25%. By optimizing the thickness of all functional and the perovskite absorber layers, together with the optimization of the perovskite band-gap, we present a tandem stack that can yield ca 17.5 mA cm‑ 2 current in both sub-cells at a perovskite band-gap of 1.73 eV including losses from reflection and parasitic absorption. Assuming that the higher band-gap of the perovskite absorber directly translates into a higher open circuit voltage, the perovskite sub-cell should be able to reach a value of 1.3 V. With that, realistic efficiencies above 28% are within reach for planar monolithic tandem cells in which the thickness of the perovskite top-cell and the perovskite band-gap are highly optimized. When applying light trapping schemes such as textured surfaces and by reducing the parasitic absorption of the functional layers, for example in spiro-OMeTAD, this monolithic tandem can overcome 30% power conversion efficiency.

  9. Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor.

    PubMed

    Song, Junfeng; Luo, Xianshu; Kee, Jack Sheng; Han, Kyungsup; Li, Chao; Park, Mi Kyoung; Tu, Xiaoguang; Zhang, Huijuan; Fang, Qing; Jia, Lianxi; Yoon, Yong-Jin; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

    2013-07-29

    We demonstrate a silicon-based optoelectronic integrated circuit (OEIC) for label-free bio/chemical sensing application. Such on-chip OEIC sensor system consists of optical grating couplers for vertical light coupling into silicon waveguides, a thermal-tunable microring as a tunable filter, an exposed microring as an optical label-free sensor, and a Ge photodetector for a direct electrical readout. Different from the conventional wavelength-scanning method, we adopt low-cost broadband ASE light source, together with the on-chip tunable filter to generate sliced light source. The effective refractive index change of the sensing microring induced by the sensing target is traced by scanning the supplied electrical power applied onto the tracing microring, and the detected electrical signal is read out by the Ge photodetector. For bulk refractive index sensing, we demonstrate using such OEIC sensing system with a sensitivity of ~15 mW/RIU and a detection limit of 3.9 μ-RIU, while for surface sensing of biotin-streptavidin, we obtain a surface mass sensitivity of S(m) = ~192 µW/ng·mm(-2) and a surface detection limit of 0.3 pg/mm(2). The presented OEIC sensing system is suitable for point-of-care applications.

  10. Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor.

    PubMed

    Song, Junfeng; Luo, Xianshu; Kee, Jack Sheng; Han, Kyungsup; Li, Chao; Park, Mi Kyoung; Tu, Xiaoguang; Zhang, Huijuan; Fang, Qing; Jia, Lianxi; Yoon, Yong-Jin; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

    2013-07-29

    We demonstrate a silicon-based optoelectronic integrated circuit (OEIC) for label-free bio/chemical sensing application. Such on-chip OEIC sensor system consists of optical grating couplers for vertical light coupling into silicon waveguides, a thermal-tunable microring as a tunable filter, an exposed microring as an optical label-free sensor, and a Ge photodetector for a direct electrical readout. Different from the conventional wavelength-scanning method, we adopt low-cost broadband ASE light source, together with the on-chip tunable filter to generate sliced light source. The effective refractive index change of the sensing microring induced by the sensing target is traced by scanning the supplied electrical power applied onto the tracing microring, and the detected electrical signal is read out by the Ge photodetector. For bulk refractive index sensing, we demonstrate using such OEIC sensing system with a sensitivity of ~15 mW/RIU and a detection limit of 3.9 μ-RIU, while for surface sensing of biotin-streptavidin, we obtain a surface mass sensitivity of S(m) = ~192 µW/ng·mm(-2) and a surface detection limit of 0.3 pg/mm(2). The presented OEIC sensing system is suitable for point-of-care applications. PMID:23938665

  11. Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications

    NASA Astrophysics Data System (ADS)

    Chen, Lung-Chien; Weng, Chiao-Yu

    2015-10-01

    This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

  12. Integrated optoelectronics for communication and processing; Proceedings of the Meeting, Boston, MA, Sept. 3, 4, 1991

    NASA Astrophysics Data System (ADS)

    Hong, C.-S.

    The present volume on integrated optoelectronics and processing discusses backplane interconnects, transmitters, array technology, receivers, modulators, and lasers. Attention is given to fiber-optic technologies for aircraft applications, packet switch networks, hybrid packaging of surface-emitting microlaser arrays on planar optical systems, and techniques for the implementation of high-speed free-space optical interconnections. Topics addressed include the development of efficient monolithic surface-emitting laser diode arrays, hybrid optoelectronic integration of transmitter arrays on a silicon waferboard, a four-channel hybrid receiver using a silicon substrate for packaging, and novel processing techniques for optoelectronic devices and their integration. Also discussed are processing issues and technologies for optoelectronic integrated circuits and devices, a wideband impedance-matched integrated optoelectronic transmitter, laser packaging for single-mode fiber systems, and an integrated active optical bistable circuit.

  13. Elasticity and inelasticity of silicon nitride/boron nitride fibrous monoliths.

    SciTech Connect

    Smirnov, B. I.; Burenkov, Yu. A.; Kardashev, B. K.; Singh, D.; Goretta, K. C.; de Arellano-Lopez, A. R.; Energy Technology; Russian Academy of Sciences; Univer. de Sevilla

    2001-01-01

    A study is reported on the effect of temperature and elastic vibration amplitude on Young's modulus E and internal friction in Si{sub 3}N{sub 4} and BN ceramic samples and Si{sub 3}N{sub 4}/BN monoliths obtained by hot pressing of BN-coated Si{sub 3}N{sub 4} fibers. The fibers were arranged along, across, or both along and across the specimen axis. The E measurements were carried out under thermal cycling within the 20-600 C range. It was found that high-modulus silicon-nitride specimens possess a high thermal stability; the E(T) dependences obtained under heating and cooling coincide well with one another. The low-modulus BN ceramic exhibits a considerable hysteresis, thus indicating evolution of the defect structure under the action of thermoelastic (internal) stresses. Monoliths demonstrate a qualitatively similar behavior (with hysteresis). This behavior of the elastic modulus is possible under microplastic deformation initiated by internal stresses. The presence of microplastic shear in all the materials studied is supported by the character of the amplitude dependences of internal friction and the Young's modulus. The experimental data obtained are discussed in terms of a model in which the temperature dependences of the elastic modulus and their features are accounted for by both microplastic deformation and nonlinear lattice-atom vibrations, which depend on internal stresses.

  14. A monolithically integrated detector-preamplifier on high-resistivity silicon

    SciTech Connect

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/{radical}Hz in the white noise regime. Measurements with an Am{sup 241} radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm{sup 2} detector with on-chip amplifier in an experimental setup with substantial external pickup.

  15. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    NASA Astrophysics Data System (ADS)

    Bickford, Justin Robert

    Waferbonding is a technique that integrates different semiconductors together, in order to obtain hybrid structures that exploit the strengths of each material. Work was done at the University of California at San Diego to investigate the waferbonding of III/V compound semiconductors to silicon using a metal interface. GaAs and other III/V compound semiconductors surpass silicon in their ability to create high performance microwave devices, while silicon offers an inexpensive platform with a proven digital architecture that can interface with microwave devices and support passive components and driver circuitry. Intimate integration of the two will be required, as mixed RF/digital and optical/digital systems for communications devices such as cell phones, wi-fi, and optical communications systems are pushed smaller, faster, and to higher power. The metalbonding implementation of a proposed heterogeneous monolithic microwave integrated circuit (HMMIC) system was investigated, and was shown to extend the capabilities of existing homogeneous monolithic microwave integrated circuit (MMIC) systems. The main goals of this work were two-fold; first to implement a robust heterogeneous integration technique, and second, to show that this approach uniquely improves upon existing microwave integration technology. The metalbonding technique investigated sparsely integrated GaAs structures onto silicon, in pursuit of this HMMIC scheme. Both bottom-up and top-down fabrication methods were implemented. These approaches required the development of a myriad of meticulously designed fabrication procedures capable of avoiding the many incompatibilities between the compound semiconductor, bondmetal, and silicon materials. The bondmetal interface, provided by these techniques, broadens the scope of existing monolithic microwave integrated circuit technology design possibilities. Essential bond interface properties were measured to establish the performance of this heterogeneous

  16. Structural and optoelectronic properties of amorphous and microcrystalline silicon deposited at low substrate temperatures by RF and HW CVD

    SciTech Connect

    Alpium, P.; Chu, V.; Conde, J.P.

    1999-07-01

    The structural and optoelectronic properties of silicon thin films prepared by hot wire chemical vapor deposition and radio frequency plasma enhanced chemical vapor deposition are studied in the range of substrate temperatures (T{sub sub}) from 100 C to 25 C. The defect density, structure factor and bond angle disorder of amorphous silicon films (a-Si:H) deposited by both techniques are strongly improved by the use of hydrogen dilution. Correlation of these structural properties with important optoelectronic properties, such as photo-to-dark conductivity ratio, is made. Microcrystalline silicon ({micro}c-Si:H) is obtained using HW with a large crystalline fraction for hydrogen dilutions above 85% independently of T{sub sub}. The deposition of {micro}c-Si:H by RF requires increasing the hydrogen dilution and shows decreasing crystalline fraction as T{sub sub} is decreased. The properties of the low T{sub sub} films are compared to those of samples produced at 175 C and 250 C in the same reactors.

  17. Monolithic Single-Mode DFB Laser Array with Precise Wavelength Control for Optoelectronic Integration using an Equivalent Phase Shift Method

    NASA Astrophysics Data System (ADS)

    Li, Jingsi; Cheng, Julian; Microelectronics Research Center Team

    2013-03-01

    The integrated distributed feedback (DFB) laser array is a key component in photonic integrated circuits for wavelength-division multiplexing (WDM) system. However, it is difficult to precisely control the wavelength of individual lasers. When the rear facet of the laser is coated with a high-reflectivity mirror, a random phase change is introduced that shifts the lasing wavelength, making monolithic integration of a wavelength-controlled WDM array very difficult. To solve this problem, we propose a method to precisely control the lasing wavelength of DFB lasers over a wide range by introducing an equivalent phase shift in the cavity using sampled Bragg gratings, using wafer-scale optical lithography and requiring only coarse dimension control. The wavelength can be fine-tuned by applying different DC currents. It is shown that a WDM-DFB laser array with uniform wavelength spacing can be controlled accurately in this manner. Integrated arrays of single-mode DFB lasers for WDM systems can thus be fabricated in a low-cost manner without using low-throughput e-beam lithography, and is scalable for mass-manufacturing.

  18. Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon

    PubMed Central

    Franco, Andrea; Geissbühler, Jonas; Wyrsch, Nicolas; Ballif, Christophe

    2014-01-01

    Microchannel plates are vacuum-based electron multipliers for particle—in particular, photon— detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80–120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200°C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process. PMID:24698955

  19. Development of silicon monolithic arrays for dosimetry in external beam radiotherapy

    NASA Astrophysics Data System (ADS)

    Bisello, Francesca; Menichelli, David; Scaringella, Monica; Talamonti, Cinzia; Zani, Margherita; Bucciolini, Marta; Bruzzi, Mara

    2015-10-01

    New tools for dosimetry in external beam radiotherapy have been developed during last years in the framework of the collaboration among the University of Florence, INFN Florence and IBA Dosimetry. The first step (in 2007) was the introduction in dosimetry of detector solutions adopted from high energy physics, namely epitaxial silicon as the base detector material and a guard ring in diode design. This allowed obtaining state of the art radiation hardness, in terms of sensitivity dependence on accumulated dose, with sensor geometry particularly suitable for the production of monolithic arrays with modular design. Following this study, a 2D monolithic array has been developed, based on 6.3×6.3 cm2 modules with 3 mm pixel pitch. This prototype has been widely investigated and turned out to be a promising tool to measure dose distributions of small and IMRT fields. A further linear array prototype has been recently design with improve spatial resolution (1 mm pitch) and radiation hardness. This 24 cm long device is constituted by 4×64 mm long modules. It features low sensitivity changes with dose (0.2%/kGy) and dose per pulse (±1% in the range 0.1-2.3 mGy/pulse, covering applications with flattened and unflattened photon fields). The detector has been tested with very satisfactory results as a tool for quality assurance of linear accelerators, with special regards to small fields, and proton pencil beams. In this contribution, the characterization of the linear array with unflattened MV X-rays, 60Co radiation and 226 MeV protons is reported.

  20. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics.

    PubMed

    Zhao, Chao; Ng, Tien Khee; ElAfandy, Rami T; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Ajia, Idris A; Roqan, Iman S; Janjua, Bilal; Shen, Chao; Eid, Jessica; Alyamani, Ahmed Y; El-Desouki, Munir M; Ooi, Boon S

    2016-07-13

    A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the "green gap" has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley-Read-Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment. PMID:27352143

  1. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Palacios-Huerta, L.; Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Aceves-Mijares, M.; Domínguez-Horna, C.; Morales-Sánchez, A.

    2016-07-01

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si+ implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  2. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, S.W.

    1997-02-25

    Disclosed is an illumination source comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

  3. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, Shiu-Wing

    1997-01-01

    An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

  4. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, S.W.

    1998-06-16

    An illumination source is disclosed comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

  5. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, Shiu-Wing

    1998-01-01

    An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

  6. Optoelectronic techniques for broadband switching

    NASA Astrophysics Data System (ADS)

    Su, S. F.; Jou, L.; Lenart, J.

    1988-01-01

    Optoelectronic switching employs a hybrid optical/electronic principle to perform the switching function and is applicable for either analog broadband or high-bit rate digital switching. The major advantages of optoelectronic switching include high isolation, low crosstalk, small physical size, light weight, and low power consumption. These advantages make optoelectronic switching an excellent candidate for on-board satellite switching. This paper describes a number of optoelectronic switching architectures. System components required for implementing these switching architectures are discussed. Performance of these architectures are evaluated by calculating their crosstalk, isolation, insertion loss, matrix size, drive power, throughput, and switching speed. Technologies needed for monolithic optoelectronic switching are also identified.

  7. Electrostatic actuated strain engineering in monolithically integrated VLS grown silicon nanowires

    NASA Astrophysics Data System (ADS)

    Wagesreither, Stefan; Bertagnolli, Emmerich; Kawase, Shinya; Isono, Yoshitada; Lugstein, Alois

    2014-11-01

    In this paper we demonstrate the fabrication and application of an electrostatic actuated tensile straining test (EATEST) device enabling strain engineering in individual suspended nanowires (NWs). Contrary to previously reported approaches, this special setup guarantees the application of pure uniaxial tensile strain with no shear component of the stress while e.g. simultaneously measuring the resistance change of the NW. To demonstrate the potential of this approach we investigated the piezoresistivity of about 3 μm long and 100 nm thick SiNWs but in the same way one can think about the application of such a device on other geometries, other materials beyond Si as well as the use of other characterization techniques beyond electrical measurements. Therefore single-crystal SiNWs were monolithically integrated in a comb drive actuated MEMS device based on a silicon-on-insulator (SOI) wafer using the vapor-liquid-solid (VLS) growth technique. Strain values were verified by a precise measurement of the NW elongation with scanning electron microscopy (SEM). Further we employed confocal μ-Raman microscopy for in situ, high spatial resolution measurements of the strain in individual SiNWs during electrical characterization. A giant piezoresistive effect was observed, resulting in a fivefold increase in conductivity for 3% uniaxially strained SiNWs. As the EATEST approach can be easily integrated into an existing Si technology platform this architecture may pave the way toward a new generation of nonconventional devices by leveraging the strain degree of freedom.

  8. Comparison of dynamic fatigue behavior between SiC whisker-reinforced composite and monolithic silicon nitrides

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Salem, Jonathan A.

    1991-01-01

    The dynamic fatigue behavior of 30 vol percent silicon nitride whisker-reinforced composite and monolithic silicon nitrides were determined as a function of temperature from 1100 to 1300 C in ambient air. The fatigue susceptibility parameter, n, decreased from 88.1 to 20.1 for the composite material, and from 50.8 to 40.4 for the monolithic, with increasing temperature from 1100 to 1300 C. A transition in the dynamic fatigue curve occurred for the composite material at a low stressing rate of 2 MPa/min at 1300 C, resulting in a very low value of n equals 5.8. Fractographic analysis showed that glassy phases in the slow crack growth region were more pronounced in the composite compared to the monolithic material, implying that SiC whisker addition promotes the formation of glass rich phases at the grain boundaries, thereby enhancing fatigue. These results indicate that SiC whisker addition to Si3 N4 matrix substantially deteriorates fatigue resistance inherent to the matrix base material for this selected material system.

  9. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  10. A monolithic silicon based integrated signal generation and detection system for monitoring DNA hybridisation.

    PubMed

    Bertolino, Chiara; Macsweeney, Marion; Tobin, Jane; O'Neill, Brendan; Sheehan, Michelle M; Coluccia, Salvatore; Berney, Helen

    2005-10-15

    The aim of this work was to develop an integrated solution to DNA hybridisation monitoring for diagnostics on a monolithic silicon platform. A fabrication process was developed incorporating a gold initiation electrode patterned directly onto a PIN photodiode detector. Patterned interdigitated type electrodes exhibited the smallest reduction in photodiode sensitivity, therefore these were chosen as the ECL initiator design. A novel DNA hybridisation assay was developed based on the displacement of a partially mismatched complementary strand by a perfectly matched labelled complementary strand. Pre-hybridised thiolated oligonucleotide and unlabelled 25% mismatched oligonucleotide were assembled on the gold initiation electrode. On addition of the labelled perfectly complementary oligonucleotide, the mismatched strands were displaced and a signal was generated. The sensitivity of the photodiode to light emitted at 620 nm, the ruthenium emission wavelength, was determined and subsequently, the diode current response to light generated by flow addition of ruthenium solution was found to be measurable to a concentration of 10 fM. Pre-hybridised duplex DNA, consisting of thiolated oligonucleotide and ruthenium labelled complementary oligonucleotide, was assembled on the gold initiation electrode. The difference between the current measured during flow of buffer and the ECL co-reactant TPA was three orders of magnitude, indicating that DNA assembled on the surface comprised sufficient ruthenium to generate a measurable signal. Finally, the displacement of unlabelled partial mismatch oligonucleotide from the sensor surface was monitored on addition of the ruthenium labelled perfectly complementary oligonucleotide in TPA flow and the measured photodiode current response was up to 50 times greater. PMID:16202869

  11. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    PubMed

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %). PMID:27128407

  12. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    PubMed

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %).

  13. Study of silicone-based materials for the packaging of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lin, Yeong-Her

    The first part of this work is to evaluate the main materials used for the packaging of high power light-emitting diodes (LEDs), i.e., the die attach materials, the encapsulant materials, and high color rendering index(CRI) sol-gel composite materials. All of these materials had been discussed the performance, reliability, and issues in high power LED packages. High power white LEDs are created either from blue or near-ultraviolet chips encapsulated with a yellow phosphor, or from red-green-blue LED light mixing systems. The phosphor excited by blue LED chip was mostly used in experiment of this dissertation. The die attach materials contains filler particles possessing a maximum particle size less than 1.5 mum in diameter blended with epoxy polymer matrix. Such compositions enable thin bond line thickness, which decreases thermal resistance that exists between thermal interface materials and the corresponding mating surfaces. The thermal conductivity of nano silver die attach materials is relatively low, the thermal resistance from the junction to board is just 1.6 KW-1 in the bond line thickness of 5.3 mum, which is much lower than the thermal resistance using conventional die attach materials. The silicone die attach adhesive made in the lab cures through the free radical reaction of epoxy-functional organopolysiloxane and through the hydrosilylation reaction between alkenyl-functional organopolysiloxane and silicone-boned hydrogen-functional organopolysiloxane. By the combination of the free radical reaction and the hydrosilylation reaction, the low-molecular-weight silicone oil will not be out-migrated and not contaminate wire bondability to the LED chip and lead frame. Hence, the silicone die attach adhesive made in the lab can pass all reliability tests, such as operating life test JEDEC 85°C/85RH and room temperature operating life test. For LED encapsulating materials, most of commercial silicone encapsulants still suffer thermal/radiation induced

  14. In vivo silicon-based flexible radio frequency integrated circuits monolithically encapsulated with biocompatible liquid crystal polymers.

    PubMed

    Hwang, Geon-Tae; Im, Donggu; Lee, Sung Eun; Lee, Jooseok; Koo, Min; Park, So Young; Kim, Seungjun; Yang, Kyounghoon; Kim, Sung June; Lee, Kwyro; Lee, Keon Jae

    2013-05-28

    Biointegrated electronics have been investigated for various healthcare applications which can introduce biomedical systems into the human body. Silicon-based semiconductors perform significant roles of nerve stimulation, signal analysis, and wireless communication in implantable electronics. However, the current large-scale integration (LSI) chips have limitations in in vivo devices due to their rigid and bulky properties. This paper describes in vivo ultrathin silicon-based liquid crystal polymer (LCP) monolithically encapsulated flexible radio frequency integrated circuits (RFICs) for medical wireless communication. The mechanical stability of the LCP encapsulation is supported by finite element analysis simulation. In vivo electrical reliability and bioaffinity of the LCP monoencapsulated RFIC devices are confirmed in rats. In vitro accelerated soak tests are performed with Arrhenius method to estimate the lifetime of LCP monoencapsulated RFICs in a live body. The work could provide an approach to flexible LSI in biointegrated electronics such as an artificial retina and wireless body sensor networks.

  15. High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

    NASA Astrophysics Data System (ADS)

    Feng, Dazeng; Liao, Shirong; Dong, Po; Feng, Ning-Ning; Liang, Hong; Zheng, Dawei; Kung, Cheng-Chih; Fong, Joan; Shafiiha, Roshanak; Cunningham, Jack; Krishnamoorthy, Ashok V.; Asghari, Mehdi

    2009-12-01

    We demonstrate a compact, high speed Ge photodetector efficiently butt-coupled with a large cross-section silicon-on-insulate (SOI) waveguide in which the Ge p-i-n junction is placed in the horizontal direction to enable very high speed operation. The demonstrated photodetector has an active area of only 0.8×10 μm2, greater than 32 GHz optical bandwidth, and a responsivity of 1.1 A/W at a wavelength of 1550 nm. Very importantly the device can readily be integrated with high performance wavelength-division-multiplexing filters based on large cross-section SOI waveguide to form monolithic integrated silicon photonics receivers for multichannel terabit data transmission applications.

  16. Development of large-area monolithically integrated Silicon-Film photovoltaic modules. Annual subcontract report, 16 November 1991--31 December 1992

    SciTech Connect

    Rand, J.A.; Cotter, J.E.; Ingram, A.E.; Ruffins, T.R.; Shreve, K.P.; Hall, R.B.; Barnett, A.M.

    1993-06-01

    This report describes work to develop Silicon-Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (< 100-{mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200-cm{sup 2}, 18%-efficient, monolithic array. The short-term objectives are to improve material quality and to fabricate 100 cm{sup 2} monolithically interconnected solar cell arrays. Low minority-carrier diffusion length in the silicon film and series resistance in the interconnected device structure are presently limiting device performance. Material quality is continually improving through reduced impurity contamination. Metallization schemes, such as a solder-dipped interconnection process, have been developed that will allow low-cost production processing and minimize R{sub s} effects. Test data for a nine-cell device (16 cm{sup 2}) indicated a V{sub oc} of 3.72 V. These first-reported monolithically interconnected multicrystalline silicon-on-ceramic devices show low shunt conductance (< 0.1 mA/cm{sup 2}) due to limited conduction through the ceramic and no process-related metallization shunts.

  17. Dedicated optoelectronic stochastic parallel processor for real-time image processing: motion-detection demonstration and design of a hybrid complementary-metal-oxide semiconductor- self-electro-optic-device-based prototype.

    PubMed

    Cassinelli, A; Chavel, P; Desmulliez, M P

    2001-12-10

    We report experimental results and performance analysis of a dedicated optoelectronic processor that implements stochastic optimization-based image-processing tasks in real time. We first show experimental results using a proof-of-principle-prototype demonstrator based on standard silicon-complementary-metal-oxide-semiconductor (CMOS) technology and liquid-crystal spatial light modulators. We then elaborate on the advantages of using a hybrid CMOS-self-electro-optic-device-based smart-pixel array to monolithically integrate photodetectors and modulators on the same chip, providing compact, high-bandwidth intrachip optoelectronic interconnects. We have modeled the operation of the monolithic processor, clearly showing system-performance improvement.

  18. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, A.I.; Gargas, Daniel; Jeong Hwang, Yun; Yang, Peidong

    2009-08-04

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  19. A New Silicon Allotrope with a Direct Band Gap for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru; Peking University Team; Kawazoe Collaboration; Jena Collaboration

    Silicon structures with direct band gaps have been hotly pursued for solar cell applications. To effectively harvest the sunlight in the whole frequency region, it is a good strategy to use arrays consisting of Si structures with different direct band gaps. However, the structure with a direct band gap about 0.6 eV has been missing according to current progress made in the direction. Here we report our findings that the missing structure can be constructed by using Si triangles as the building blocks, which is stable dynamically and thermally, not only exhibiting the desirable band gap, but also showing high intrinsic mobility and low mass density. These advantages over the existing Si structures would motivate new experimental effort in this direction.

  20. Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

    NASA Astrophysics Data System (ADS)

    Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

    2015-02-01

    We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

  1. Monolithically Integrated μLEDs on Silicon Neural Probes for High-Resolution Optogenetic Studies in Behaving Animals.

    PubMed

    Wu, Fan; Stark, Eran; Ku, Pei-Cheng; Wise, Kensall D; Buzsáki, György; Yoon, Euisik

    2015-12-16

    We report a scalable method to monolithically integrate microscopic light emitting diodes (μLEDs) and recording sites onto silicon neural probes for optogenetic applications in neuroscience. Each μLED and recording site has dimensions similar to a pyramidal neuron soma, providing confined emission and electrophysiological recording of action potentials and local field activity. We fabricated and implanted the four-shank probes, each integrated with 12 μLEDs and 32 recording sites, into the CA1 pyramidal layer of anesthetized and freely moving mice. Spikes were robustly induced by 60 nW light power, and fast population oscillations were induced at the microwatt range. To demonstrate the spatiotemporal precision of parallel stimulation and recording, we achieved independent control of distinct cells ∼ 50 μm apart and of differential somato-dendritic compartments of single neurons. The scalability and spatiotemporal resolution of this monolithic optogenetic tool provides versatility and precision for cellular-level circuit analysis in deep structures of intact, freely moving animals. PMID:26627311

  2. Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices.

    PubMed

    Mukherjee, Subhrajit; Maiti, Rishi; Katiyar, Ajit K; Das, Soumen; Ray, Samit K

    2016-01-01

    Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450-800 nm are found to be stable in the temperature range of 10-350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 10(11) Jones, respectively at an applied bias of -2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials. PMID:27357596

  3. Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices.

    PubMed

    Mukherjee, Subhrajit; Maiti, Rishi; Katiyar, Ajit K; Das, Soumen; Ray, Samit K

    2016-06-30

    Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450-800 nm are found to be stable in the temperature range of 10-350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 10(11) Jones, respectively at an applied bias of -2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials.

  4. Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices

    PubMed Central

    Mukherjee, Subhrajit; Maiti, Rishi; Katiyar, Ajit K.; Das, Soumen; Ray, Samit K.

    2016-01-01

    Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450–800 nm are found to be stable in the temperature range of 10–350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 1011 Jones, respectively at an applied bias of −2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials. PMID:27357596

  5. Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

    NASA Astrophysics Data System (ADS)

    Dutta, Satadal; Hueting, Raymond J. E.; Annema, Anne-Johan; Qi, Lin; Nanver, Lis K.; Schmitz, Jurriaan

    2015-09-01

    This work presents the modeling of light emission from silicon based p+n junctions operating in avalanche breakdown. We revisit the photon emission process under the influence of relatively high electric fields in a reverse biased junction ( > 10 5 V/cm). The photon emission rate is described as a function of the electron temperature T e , which is computed from the spatial distribution of the electric field. The light emission spectra lie around the visible spectral range ( λ ˜ 300-850 nm), where the peak wavelength and the optical intensity are both doping level dependent. It is theoretically derived that a specific minimum geometrical width ( ˜ 170 nm) of the active region of avalanche is required, corresponding to a breakdown voltage of ˜5 V, below which the rate of photon emission in the desired spectrum drops. The derived model is validated using experimental data obtained from ultra-shallow p+n junctions with low absorption through a nm-thin p+ region and surface coverage of solely 3 nm of pure boron. We observe a peak in the emission spectra near 580 nm and 650 nm for diodes with breakdown voltages 7 V and 14 V, respectively, consistent with our model.

  6. Monolithic integration and optimization of waveguide silicon modulators and germanium photodetectors

    NASA Astrophysics Data System (ADS)

    Liow, Tsung-Yang; Ang, Kah-Wee; Fang, Qing; Song, Junfeng; Xiong, Yong-Zhong; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee

    2010-05-01

    By tapping on the volume manufacturing capability of the Si CMOS platform, Si photonics can potentially offer costeffective yet high performance optical interface solutions, and will be especially important in short reach applications. Numerous challenges lie ahead for monolithically integrated Si photonics. There are process integration and thermal budget constraints when monolithically integrating individual Si photonic components such as modulators and photodetectors, and also CMOS on the same chip. In this work, the CMOS-compatible monolithic integration of Si modulators and Ge-on-Si photodetectors on the same wafer is demonstrated and the details of performance optimization are also discussed. Besides process compatibility, the modulators and photodetectors should possess high efficiency and the ability to operate at low power supply voltages. The methods to achieve this are also described. The carrier depletion type Si modulators achieved high modulation efficiency and speed (Vπ.Lπ = 2.6 V.cm, 10 Gbps). At 10 Gbps, an extinction ratio of 6 dB was measured in a modulator with 2-mm-long phase-shifters using single-ended drive (VRF = 5 Vpp). Low voltage operation at 3.125 Gbps was also demonstrated using differential drive, which allowed the drive voltage to be reduced to only 1 V (VRF = 1 Vpp). Ge-on-Si photodetectors were integrated by using a selective epitaxial Ge growth process. The performance of such photodetectors was evaluated in terms of speed, responsivity and dark current for different temperatures and operating voltages. It is shown that introducing a low thermal budget post-epitaxy anneal improves the performance of the Ge photodetectors, resulting in significantly improved dark current. The responsivity and speed in the low voltage regime are also enhanced, which enhances low voltage or even short-circuit (VBias = 0 V) operation.

  7. A linear monolithic 4-6 on silicon IR detector array

    NASA Astrophysics Data System (ADS)

    Vandamme, J.; Vermeiren, J.; Zogg, H.; Masek, J.; Fabbricotti, M.

    1992-12-01

    A linear array of monolithically grown PbTe and PbSnSe detectors on (111)-Si for MWIR and TIR imaging applications was designed and processed. The array consists of a staggered row of 2 by 128 detectors on a 100 micrometers pitch. The readout circuitry, integrated on the Si substrate consists of a COS multiplexer with a direct injection input stage, a charge reduction stage and charge to voltage conversion stage for each individual detector. This XDI (MultipeXed Direct Injection) circuit also allows for on-chip nonuniformity compensation with a switched capacitor network.

  8. Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion

    SciTech Connect

    2010-09-01

    ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

  9. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

    SciTech Connect

    Dargis, Rytis Clark, Andrew; Erdem Arkun, Fevzi; Grinys, Tomas; Tomasiunas, Rolandas; O'Hara, Andy; Demkov, Alexander A.

    2014-07-01

    Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

  10. An optoelectronic circuit with a light source, an optical waveguide and a sensor all on silicon: Results and analysis of a novel system

    NASA Astrophysics Data System (ADS)

    Alarcón-Salazar, J.; Zaldívar-Huerta, I. E.; Aceves-Mijares, M.

    2016-10-01

    A full analysis of an optoelectronic circuit on silicon composed by a light emitter, an optical waveguide and a photodetector is achieved. The light emitter is based on silicon rich oxide multilayers. The multilayer structure exhibits an electroluminescence spectra from 400 nm to 800 nm. Light emitter and optical waveguide are located next to each other in a novel topology that allows the direct impact of the photons to the depletion layer of the sensor, increasing the efficiency. An optical rib-type waveguide and multi-modal, using Si3N4 and SiO2 as core and cladding materials, is considered to propagate the light from the light emitter to the sensor. Analysis of the waveguide reveals that the optimal height is 1.25 μm, when a width of 5 μm and a fractional height of 0.8 are used. A relative transmittance of the optical waveguide shows that the propagated light maintains the wide spectrum. A planar diode is used as photodetector. The proposal-integrated structure shows that light impinges directly on the depleted zone, improving detection and performance of the diode. Finally, a description of the novel optoelectronic circuit is addressed.

  11. Imaging and chemical surface analysis of biomolecular functionalization of monolithically integrated on silicon Mach-Zehnder interferometric immunosensors

    NASA Astrophysics Data System (ADS)

    Gajos, Katarzyna; Angelopoulou, Michailia; Petrou, Panagiota; Awsiuk, Kamil; Kakabakos, Sotirios; Haasnoot, Willem; Bernasik, Andrzej; Rysz, Jakub; Marzec, Mateusz M.; Misiakos, Konstantinos; Raptis, Ioannis; Budkowski, Andrzej

    2016-11-01

    Time-of-flight secondary ion mass spectrometry (imaging, micro-analysis) has been employed to evaluate biofunctionalization of the sensing arm areas of Mach-Zehnder interferometers monolithically integrated on silicon chips for the immunochemical (competitive) detection of bovine κ-casein in goat milk. Biosensor surfaces are examined after: modification with (3-aminopropyl)triethoxysilane, application of multiple overlapping spots of κ-casein solutions, blocking with 100-times diluted goat milk, and reaction with monoclonal mouse anti-κ-casein antibodies in blocking solution. The areas spotted with κ-casein solutions of different concentrations are examined and optimum concentration providing homogeneous coverage is determined. Coverage of biosensor surfaces with biomolecules after each of the sequential steps employed in immunodetection is also evaluated with TOF-SIMS, supplemented by Atomic force microscopy and X-ray photoelectron spectroscopy. Uniform molecular distributions are observed on the sensing arm areas after spotting with optimum κ-casein concentration, blocking and immunoreaction. The corresponding biomolecular compositions are determined with a Principal Component Analysis that distinguished between protein amino acids and milk glycerides, as well as between amino acids characteristic for Mabs and κ-casein, respectively. Use of the optimum conditions (κ-casein concentration) for functionalization of chips with arrays of ten Mach-Zehnder interferometers provided on-chips assays with dramatically improved both intra-chip response repeatability and assay detection sensitivity.

  12. Tensile creep and creep rupture behavior of monolithic and SiC-whisker-reinforced silicon nitride ceramics

    SciTech Connect

    Ohji, Tatsuki; Yamauchi, Yukihiko )

    1993-12-01

    The tensile creep and creep rupture behavior of silicon nitride was investigated at 1,200 to 1,350 C using hot-pressed materials with and without SiC whiskers. Stable steady-state creep was observed under low applied stresses at 1,200 C. Accelerated creep regimes, which were absent below 1,300 C, were identified above that temperature. The appearance of accelerated creep at the higher temperatures attributable to formation of microcracks throughout a specimen. The whisker-reinforced material exhibited better creep resistance than the monolith at 1,200 C. Considerably high values 3 to 5, were obtained for the creep exponent in the overall temperature range. The exponent tended to decrease with decreasing applied stress at 1,200 C. The primary creep mechanism was considered cavitation-enhanced creep. Specimen lifetimes followed the Monkman-Grant relationship except for fractures with large accelerated creep regimes. The creep rupture behavior is discussed in association with cavity formation and crack adolescence.

  13. Friction and Wear of Monolithic and Fiber Reinforced Silicon-Ceramics Sliding Against IN-718 Alloy at 25 to 800 C in Atmospheric Air at Ambient Pressure

    NASA Technical Reports Server (NTRS)

    Deadmore, Daniel L.; Sliney, Harold E.

    1988-01-01

    The friction and wear of monolithic and fiber reinforced Si-ceramics sliding against the nickel base alloy IN-718 at 25 to 800 C was measured. The monolithic materials tested were silicon carbide (SiC), fused silica (SiO2), syalon, silicon nitride (Si3N4) with W and Mg additives, and Si3N4 with Y2O3 additive. At 25 C fused silica had the lowest friction while Si3N4 (W,Mg type) had the lowest wear. At 800 C syalon had the lowest friction while Si3N4 (W,Mg type) and syalon had the lowest wear. The SiC/IN-718 couple had the lowest total wear at 25 C. At 800 C the fused silica/IN-718 couple exhibited the least total wear. SiC fiber reinforced reaction bonded silicon nitride (RBSN) composite material with a porosity of 32 percent and a fiber content of 23 vol percent had a lower coefficient of friction and wear when sliding parallel to the fiber direction than in the perpendicular at 25 C. The coefficient of friction for the carbon fiber reinforced borosilicate composite was 0.18 at 25 C. This is the lowest of all the couples tested. Wear of this material was about two decades smaller than that of the monolithic fused silica. This illustrates the large improvement in tribological properties which can be achieved in ceramic materials by fiber reinforcement. At higher temperatures the oxidation products formed on the IN-718 alloy are transferred to the ceramic by sliding action and forms a thin, solid lubricant layer which decreases friction and wear for both the monolithic and fiber reinforced composites.

  14. Low-noise monolithic bipolar front-end for silicon drift detectors

    NASA Astrophysics Data System (ADS)

    Dabrowski, W.; Bialas, W.; Bonazzola, G.; Bonvicini, W.; Casati, L.; Ceretto, F.; Giubellino, P.; Prest, M.; Riccati, L.; Zampa, N.

    1999-01-01

    A very low noise, 32-channel preamplifier/shaper chip has been designed for the analogue readout of silicon detectors. The circuit has been optimized in view of the operation of silicon drift detectors, which have very low capacitance and produce gaussian signals of σ of few tens of ns. The chip (OLA) has been designed and manufactured using the SHPi full-custom bipolar process by Tektronix. Each channel is composed by a preamplifier, a shaper and a symmetrical line driver, which allows to drive either a positive and a negative single ended output separately on 50 Ω impedance or a differential twisted pair. The intrinsic peaking time of the circuit is ˜60 ns, and the noise is below 250 electrons at zero input load capacitance. The power consumption is 2 mW/channel, mostly due to the output driver.

  15. Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

    NASA Astrophysics Data System (ADS)

    Nam, Ju Hyung; Alkis, Sabri; Nam, Donguk; Afshinmanesh, Farzaneh; Shim, Jaewoo; Park, Jin-Hong; Brongersma, Mark; Okyay, Ali Kemal; Kamins, Theodore I.; Saraswat, Krishna

    2015-04-01

    A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO2 as growth mask. Lateral overgrowth of Ge crystal covers SiO2 surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO2. Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength.

  16. A bipolar monolithic preamplifier for high-capacitance SSC (Superconducting Super Collider) silicon calorimetry

    SciTech Connect

    Britton, C.L. Jr. ); Kennedy, E.J. . Dept. of Electrical and Computer Engineering Oak Ridge National Lab., TN ); Bugg, W.M. . Dept. of Physics)

    1990-01-01

    This paper describes a preamplifier designed and fabricated specifically to address the requirements of silicon calorimetry for the Superconducting Super Collider (SSC). The topology and its features are discussed in addition to the design methodology employed. The simulated and measured results for noise, power consumption, and speed are presented. Simulated an measured data for radiation damage effects as well as data for post-damage annealing are also presented. 8 refs., 7 figs., 2 tabs.

  17. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells

    SciTech Connect

    Ayra, R.R.; Bennett, M.S.; Dickson, C.R.; Fieselmann, B.; Fortmann, C.; Goldstein, B.; Morris, J.; O'Dowd, J.G.; Oswald, R.S.; Wiedeman, S.; Yang, L. . Thin Film Div.)

    1989-10-01

    This document describes efforts to improve the quality of candidate photovoltaic materials used in amorphous wide- and narrow-band-gap materials, namely, a-Si{sub 1-x}C{sub x} and a-Si{sub 1-x}Ge{sub x}. Although these alloys show a decrease in mobility-lifetime product as the fraction of silicon decreases, their optical properties show marked differences. Microcrystalline p-layer films containing carbon were prepared to evaluate their importance for achieving high open-circuit voltages. Silicon-germanium cells were studied to optimize their performance in multijunction, stacked cell structures. The best cells fabricated from the silicon-germanium alloys yielded a conversion efficiency of 10.1% with a band gap of 1.55 eV. Several alloy-based stacked cells had conversion efficiencies of more than 10%: an a-SiC/a-SiGe cell yielded 10.5% and an a-SiC:H/a-Si:H structure yielded 10.2%. Stacked-junction cells showed far less susceptibility to light-induced degradation.

  18. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells

    SciTech Connect

    Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Brewer, J.A.; Catalano, A.W.; D'Aiello, R.V.; Dickson, C.R.; Fortmann, C.M.; Newton, J.L.; O'Dowd, J.G.; Oswald, R.S.; Wiedeman, S. . Thin Film Div.)

    1989-09-01

    This report present results of the third phase of research in high-efficiency, single-junction, monolithic, thin-film, a-Si solar cells. Six glow-discharge deposition systems, including an in-line multichamber system, were used to grow both doped and undoped a-Si films. In single load-lock system, a-Si was deposited over 1000- cm{sup 2} substrates with less then a 1% variation in thickness and low oxygen impurity levels. The system produced 1000-cm{sup 2} submodules with active-area efficiencies of 8.7%. A model was developed for light scattering in textured tin oxide that predicts scattered transmission through the air/glass/tin oxide/air configuration to within a few percent. Textured tin oxide films were grown by chemical vapor deposition using tin tetrachloride. Solar-cell efficiencies of about 11% were obtained in small-area p-i-n cells with reflective back contacts of Ti/Ag that exhibit external quantum efficiencies as high as 58.7% at 700 nm; other cells with ITO/Ag back contacts have had quantum efficiencies as high as 64% at 700 nm. High-performance cells were fabricated by employing dopant and carbon concentration gradients near the p/i interface. Total-area efficiencies around 8% were obtained for submodules in which the patterning was done by laser scribing. 11 refs., 35 figs., 18 tabs.

  19. Development of large-area monolithically integrated Silicon-Film{trademark} photovoltaic modules. Annual subcontract report, 1 January 1993--31 December 1993

    SciTech Connect

    Rand, J.A.; Cotter, J.E.; Ingram, A.E.; Ruffins, T.R.; Thomas, C.J.; Hall, R.B.; Barnett, A.M.

    1994-06-01

    This report describes work performed under a program to develop Silicon-Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin polycrystalline layer of silicon on a durable, insulating, ceramic) substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200-cm{sup {minus}2}, 18%-efficient solar module. This report discusses material quality improvements due to the use of new metallurgical barrier technologies. The barrier is essential in preventing impurity interaction between the silicon film and the low-cost substate. Also, a new filament-based fabric substate material was investigated. Efficiencies greater than 10% were achieved on 1.0-cm{sup 2} devices made on these substrates. We also demonstrated the monolithic fabrication sequence by the fabrication of a prototype array using the device processing sequences developed during Phase 11 of this program.

  20. Monolithic microcircuit techniques and processes

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1972-01-01

    Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.

  1. A monolithically integrated polarization entangled photon pair source on a silicon chip

    PubMed Central

    Matsuda, Nobuyuki; Le Jeannic, Hanna; Fukuda, Hiroshi; Tsuchizawa, Tai; Munro, William John; Shimizu, Kaoru; Yamada, Koji; Tokura, Yasuhiro; Takesue, Hiroki

    2012-01-01

    Integrated photonic circuits are one of the most promising platforms for large-scale photonic quantum information systems due to their small physical size and stable interferometers with near-perfect lateral-mode overlaps. Since many quantum information protocols are based on qubits defined by the polarization of photons, we must develop integrated building blocks to generate, manipulate, and measure the polarization-encoded quantum state on a chip. The generation unit is particularly important. Here we show the first integrated polarization-entangled photon pair source on a chip. We have implemented the source as a simple and stable silicon-on-insulator photonic circuit that generates an entangled state with 91 ± 2% fidelity. The source is equipped with versatile interfaces for silica-on-silicon or other types of waveguide platforms that accommodate the polarization manipulation and projection devices as well as pump light sources. Therefore, we are ready for the full-scale implementation of photonic quantum information systems on a chip. PMID:23150781

  2. In situ growth of fluorescent silicon nanocrystals in a monolithic microcapsule as a photostable, versatile platform.

    PubMed

    Zhu, Guixian; Huang, Yu; Bhave, Gauri; Wang, Yuzhen; Hu, Zhongbo; Liu, Xuewu

    2016-08-25

    A facile, one-step method was developed for the in situ formation of fluorescent silicon nanocrystals (SiNC) in a microspherical encapsulating matrix. The obtained SiNC encapsulated polymeric microcapsules (SiPM) possess uniform size (0.1-2.0 μm), strong fluorescence, and nanoporous structure. A unique two stage, time dependent reaction was developed, as the growth of SiNC was slower than the formation of polymeric microcapsules. The resulting SiPM with increasing reaction time exhibited two levels of stability, and correspondingly, the release of SiNC in aqueous media showed different behavior. With reaction time <1 h, the obtained low-density SiPM (LD-SiPM) as matrix microcapsules, would release encapsulated SiNC on demand. With >1 h reaction time, resulting high-density SiPM (HD-SiPM) became stable SiNC reservoirs. SiPM exhibit stable photoluminescence. The porous structure and fluorescence quenching effects make SiPM suitable for bioimaging, drug loading and sorption of heavy metals (Hg(2+) as shown) as an intrinsic indicator. SiPM were able to reduce metal ions, forming SiPM/metal oxide and SiPM/metal hybrids, and their applications in bio-sensing and catalysis were also demonstrated.

  3. A fabrication process for the monolithic integration of magnetoelastic actuators and silicon sensors

    NASA Astrophysics Data System (ADS)

    Tang, Jun; Green, Scott R.; Gianchandani, Yogesh B.

    2015-04-01

    This paper describes a microfabrication process that accommodates the design considerations of wirelessly actuated magnetoelastic traveling wave and standing wave motors that are integrated with capacitive position sensors on a silicon substrate. The process—which incorporates AuIn eutectic bonding, multiple deep reactive ion etching steps, and metal electrode deposition and etching—addresses the challenges of magnetoelastic layer attachment, multi-layer structures, and robust electrode isolation. Measurements of successfully fabricated devices show that the typical resonant frequencies of the clockwise and counterclockwise modes for the standing wave stators existed at 12.1 and 22.4 kHz with 0.44 µm and 0.4 µm out-of-plane amplitudes, respectively, when a ≈2 Oe amplitude ac magnetic field and a ≈6.5 Oe dc magnetic bias field were applied. For the as-fabricated traveling wave motors, two desired mode shapes with π/2 spatial phase shift existed at typical frequencies of 28.4 and 29.9 kHz, with typical out-of-plane amplitudes of 74 and 70 nm, respectively, when a ≈6 Oe amplitude ac magnetic field and a ≈3 Oe dc magnetic bias field were applied. The frequencies were tuned with added mass, resulting in a shift to 28.37 and 28.33 kHz with out-of-plane amplitudes of 80 and 60 nm for the two modes, respectively. After tuning, a traveling wave with a continuous direction of propagation was successfully demonstrated. The capacitive position sensing scheme showed a sensitivity of ≈0.5 pF per degree over 8°.

  4. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  5. Development of large-area monolithically integrated silicon-film{trademark} photovoltaic modules. Final subcontract report, May 1, 1991--December 31, 1994

    SciTech Connect

    Hall, R.B.; Rand, J.A.; Cotter, J.E.

    1995-04-01

    The objective of this program is to develop Silicon Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (<100 {mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achieved by the use of light trapping and passivated surfaces. This project focused on the development of five key technologies associated with the monolithic sub-module device structure: (1) development of the film deposition and growth processes; (2) development of the low-cost ceramic substrate; (3) development of a metallurgical barrier technology; (4) development of sub-element solar cell processing techniques; and (5) development of sub-module (isolation and interconnection) processes. This report covers the development approaches and results relating to these technologies. Significant progress has been made in the development of all of the related technologies. This is evidenced by the fabrication of a working 12.0 cm{sup 2} prototype sub-module consisting of 7 elements and testing with an open circuit voltage of 3.9 volts, a short circuit current of 35.2 mA and a fill factor of 63% and an overall efficiency of 7.3%. Another significant result achieved is a 13.4% (NREL verified), 1.0 cm{sup 2} solar cell fabricated from material deposited and grown on a graphite cloth substrate. The significant technological hurdle of the program was and remains the low quality of the photovoltaic layer which is caused by contamination of the photovoltaic layer from the low-cost ceramic substrate by trace impurities found in the substrate precursor materials. The ceramic substrate and metallurgical barrier are being developed specifically to solve this problem.

  6. GaAs optoelectronic neuron arrays.

    PubMed

    Lin, S; Grot, A; Luo, J; Psaltis, D

    1993-03-10

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10(4) cm(-2) are discussed.

  7. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  8. Scalable high-power (>1kW/cm^2) diode laser stacks based on silicon monolithic micro-channel coolers

    NASA Astrophysics Data System (ADS)

    Reichert, Patrick; Fouksman, Michael; Zhou, Hailong; Nabors, David; Alcala, Jiro; Tolman, Sherry; Toivonen, Mika; Lehkonen, Sami; Haapamaa, Jouko

    2007-02-01

    We describe the performance and reliability of high power vertical diode stacks based on silicon monolithic microchannel coolers (SiMMs) operating at >1000W/cm2 CW at 808 and 940nm. The monolithic nature of these stacks makes them inherently robust and compact. Typical emitting dimensions for a 10-bar stack are ~8.8mm × 10mm with CW output power up to 1.5kW. Originally developed at Lawrence Livermore National Laboratory and now actively being developed for commercial applications at Coherent, this technology offers several advantages over current copper-based micro-channel coolers. These devices do not require use of DI water, strict monitoring and control of the pH level, careful control of the water velocity, or sealed cooling systems. The need for hydrostatic seals is also drastically reduced. A typical ten bar stack requires only 2 o-ring seals, compared to 20 such seals for a similar stack using copper microchannel cooling. Mature and readily available wet etching technology allows for cost effective batch fabrication of the sub-mount structure while achieving repeatable high precision components based on photolithographic fabrication processes.

  9. A 16 GHz silicon-based monolithic balanced photodetector with on-chip capacitors for 25 Gbaud front-end receivers.

    PubMed

    Hai, Mohammed Shafiqul; Sakib, Meer Nazmus; Liboiron-Ladouceur, Odile

    2013-12-30

    In this paper, a Germanium-on-Silicon balanced photodetector (BPD) with integrated biasing capacitors is demonstrated for highly compact monolithic 100 Gb/s coherent receivers or 25 Gbaud front-end receivers for differential or quadrature phase shift keying. The balanced photodetector has a bandwidth of approximately 16.2 GHz at a reverse bias of -4.5 V. The balanced photodetector exhibits a common mode rejection ratio (CMRR) of 30 dB. For balanced detection of return-to-zero (RZ) differential phase shift keying (DPSK) signal, the photodetector has a sensitivity of -6.95 dBm at the BER of 10(-12). For non-return-to-zero (NRZ) on off keying (OOK) signal, the measured BER is 1.0 × 10(-12) for a received power of -1.65 dBm at 25 Gb/s and 9.9 × 10(-5) for -0.34 dBm at 30 Gb/s. The total footprint area of the monolithic front-end receiver is less than 1 mm(2). The BPD is packaged onto a ceramic substrate with two DC and one RF connectors exhibits a bandwidth of 15.9 GHz.

  10. Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

    DOEpatents

    Wang, Daojing; Yang, Peidong; Kim, Woong; Fan, Rong

    2011-09-20

    Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

  11. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    PubMed

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-01

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  12. Nanowire Optoelectronics

    NASA Astrophysics Data System (ADS)

    Wang, Zhihuan; Nabet, Bahram

    2015-12-01

    Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  13. Heterogeneous integration technology for hybrid optoelectronic and electronic device and module fabrication

    NASA Astrophysics Data System (ADS)

    Jin, Michael Sungchun

    Various forms of optical computing architectures have promised enhanced processing capabilities well beyond the limits of traditional VLSI technology during the past decade. However, the progress toward realizing this vision has been severely limited by the lack of mature technology to fabricate heterogeneously integrated optoelectronic transceiver arrays (consisting of VLSI electronics with optoelectronic devices) that are necessary to link the functionality of photonic input/output devices with electronic processors. This dissertation describes a research effort that addressed this need by exploring innovative, yet highly manufacturable integration approaches that can be utilized to fabricate hybrid optoelectronic transceivers by integrating thin silicon device layers on bulk electro-optic (e.g. lead lanthanum zirconate titanate- PLZT) and other host substrates. The two integration techniques developed are: (1) B& P (Bond and Processing) technology involving bonding of bulk-quality thin silicon layer to PLZT followed by low temperature NMOS processing and (2) DDB (Direct-Device Bonding) technology, where circuit layer fabricated in SOI-silicon is thinned and bonded directly to a PLZT substrate. Characteristics of electronic circuits and modulators in integrated Si/PLZT SLMs are measured to be comparable to that of reference devices fabricated in bulk silicon and PLZT substrates. The application of the developed integration technology specifically toward fabricating Si/PLZT spatial light modulator is examined in detail. The developed device layer grafting technology based on chemo-mechanical lapping and reactive ion etching processes can be applied to assemble miniature ``mixed technology'' systems consisting of devices fabricated by different manufacturing processes (e.g. CMOS, MEMS, VCSEL and GaAs processes) in a monolithic fashion. The latter half of the thesis details experimental

  14. Monolithic Domes.

    ERIC Educational Resources Information Center

    Lanham, Carol

    2002-01-01

    Describes how the energy savings, low cost, and near-absolute protection from tornadoes provided by monolithic domes is starting to appeal to school districts for athletic and other facilities, including the Italy (Texas) Independent School District. Provides an overview of monolithic dome construction. (EV)

  15. Optoelectronic device

    DOEpatents

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  16. Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon.

    PubMed

    Wang, Renjie; Nguyen, Hieu P T; Connie, Ashfiqua T; Lee, J; Shih, Ishiang; Mi, Zetian

    2014-12-15

    We demonstrate controllable and tunable full color light generation through the monolithic integration of blue, green/yellow, and orange/red InGaN nanowire light-emitting diodes (LEDs). Such multi-color nanowire LED arrays are fabricated directly on Si substrate using a three-step selective area molecular beam epitaxy growth process. The lateral-arranged multi-color subpixels enable controlled light mixing at the chip-level and yield color-tunable light emission with CCT values in the range from 1900 K to 6800 K, while maintaining excellent color rendering capability. This work provides a viable approach for achieving micron and nanoscale tunable full-color LED arrays without the compromise between the device efficiency and light quality associated with conventional phosphor-based LEDs. PMID:25607491

  17. Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon.

    PubMed

    Wang, Renjie; Nguyen, Hieu P T; Connie, Ashfiqua T; Lee, J; Shih, Ishiang; Mi, Zetian

    2014-12-15

    We demonstrate controllable and tunable full color light generation through the monolithic integration of blue, green/yellow, and orange/red InGaN nanowire light-emitting diodes (LEDs). Such multi-color nanowire LED arrays are fabricated directly on Si substrate using a three-step selective area molecular beam epitaxy growth process. The lateral-arranged multi-color subpixels enable controlled light mixing at the chip-level and yield color-tunable light emission with CCT values in the range from 1900 K to 6800 K, while maintaining excellent color rendering capability. This work provides a viable approach for achieving micron and nanoscale tunable full-color LED arrays without the compromise between the device efficiency and light quality associated with conventional phosphor-based LEDs.

  18. A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

    NASA Astrophysics Data System (ADS)

    Geng, Fei; Ding, Xiao-yun; Xu, Gao-wei; Luo, Le

    2009-10-01

    A wafer-level packaging structure with chips and passive components embedded in a silicon substrate for multichip modules (MCM) is proposed for radio frequency (RF) applications. The packaging structure consists of two layers of benzocyclobutene (BCB) films and three layers of metalized films, in which the monolithic microwave ICs (MMICs), thin film resistors, striplines and microstrip lines are integrated. The low resistivity silicon wafer with etched cavities is used as a substrate. The BCB films serve as interlayer dielectrics (ILDs). Wirebonding gold bumps are used as electric interconnections between different layers, which eliminate the need of preparing vias by costly procedures including dry etching, metal sputtering and electroplating. The chemical mechanical planarization (CMP) is used to uncover the gold bumps, and the BCB curing profile is optimized to obtain the appropriate BCB film for CMP process. In this work, the thermal, mechanical, electrical as well as RF properties of the packaging structure are investigated. The packaging thermal resistance can be controlled below 2 °C W-1. The average shear strength of the gold bumps on the BCB surface is about 70 MPa. In addition, a Kelvin test structure is fabricated for resistance testing of the vertical vias. The performances of MMIC and interconnection structure at high frequency are simulated and tested. The testing results reveal that the slight shifting of S-parameter curves of the packaged MMIC indicates perfect transmission characteristics at high frequency. For the transition structure of transmission line, the experimental results are compatible with the simulation results. The insertion loss (S21) is below 0.4 dB from 0 to 40 GHz and the return loss (S11) is less than -20 dB from 0 to 40 GHz. For a low noise amplifier (LNA) chip, the S21 shifting caused by the packaging structure is below 0.5 dB, and S11 is less than -10 dB from 8 GHz to 14 GHz.

  19. Silicon photomultiplier readout of a monolithic 270×5×5 cm3 plastic scintillator bar for time of flight applications

    NASA Astrophysics Data System (ADS)

    Reinhardt, Tobias P.; Gohl, Stefan; Reinicke, Stefan; Bemmerer, Daniel; Cowan, Thomas E.; Heidel, Klaus; Röder, Marko; Stach, Daniel; Wagner, Andreas; Weinberger, David; Zuber, Kai

    2016-04-01

    The detection of 200-1000 MeV neutrons requires large amounts, ~ 100 cm, of detector material because of the long nuclear interaction length of these particles. In the example of the NeuLAND neutron time-of-flight detector at FAIR, this is accomplished by using 3000 monolithic scintillator bars of 270 × 5 × 5cm3 size made of a fast plastic. Each bar is read out on the two long ends, and the needed time resolution of σt < 150 ps is reached with fast timing photomultipliers. In the present work, it is investigated whether silicon photomultiplier (SiPM) photosensors can be used instead. Experiments with a picosecond laser system were conducted to determine the timing response of the assembly made up of SiPM and preamplifier. The response of the full system including also the scintillator was studied using 30 MeV single electrons provided by the ELBE superconducting electron linac. The ELBE data were matched by a simple Monte Carlo simulation, and they were found to obey an inverse-square-root scaling law. In the electron beam tests, a time resolution of σt = 136 ps was reached with a pure SiPM readout, well within the design parameters for NeuLAND.

  20. Performance of a monolithic LaBr3:Ce crystal coupled to an array of silicon photomultipliers

    NASA Astrophysics Data System (ADS)

    Ulyanov, Alexei; Morris, Oran; Hanlon, Lorraine; McBreen, Sheila; Foley, Suzanne; Roberts, Oliver J.; Tobin, Isaac; Murphy, David; Wade, Colin; Nelms, Nick; Shortt, Brian; Slavicek, Tomas; Granja, Carlos; Solar, Michael

    2016-02-01

    A gamma-ray detector composed of a single 28×28×20 mm3 LaBr3:Ce crystal coupled to a custom built 4×4 array of silicon photomultipliers was tested over an energy range of 30 keV to 9.3 MeV. The silicon photomultipliers were initially calibrated using 20 ns light pulses generated by a light emitting diode. The photodetector responses measured as a function of the number of incident photons were found to be non-linear and consistent with model predictions. Using corrections for the non-linearity of the silicon photomultipliers, the detector showed a linear response to gamma-rays with energies from 100 keV to the maximum available energy of 9.3 MeV. The energy resolution was found to be 4% FWHM at 662 keV. Despite the large thickness of the scintillator (20 mm) and a 5 mm thick optical window, the detector was capable of measuring the positions of the gamma-ray interaction points. The position resolution was measured at 356 keV and was found to be 8 mm FWHM in the detector plane and 11 mm FWHM for the depth of interaction. The detector can be used as a building block of a larger calorimeter system that is capable of measuring gamma-ray energies up to tens of MeV.

  1. Monolithic spectrometer

    DOEpatents

    Rajic, S.; Egert, C.M.; Kahl, W.K.; Snyder, W.B. Jr.; Evans, B.M. III; Marlar, T.A.; Cunningham, J.P.

    1998-05-19

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays. 6 figs.

  2. Monolithic spectrometer

    DOEpatents

    Rajic, Slobodan; Egert, Charles M.; Kahl, William K.; Snyder, Jr., William B.; Evans, III, Boyd M.; Marlar, Troy A.; Cunningham, Joseph P.

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  3. Monolithic microchannel heatsink

    DOEpatents

    Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

    1996-01-01

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

  4. Monolithic microchannel heatsink

    DOEpatents

    Benett, W.J.; Beach, R.J.; Ciarlo, D.R.

    1996-08-20

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density. 9 figs.

  5. Opto-electronic morphological processor

    NASA Technical Reports Server (NTRS)

    Yu, Jeffrey W. (Inventor); Chao, Tien-Hsin (Inventor); Cheng, Li J. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    The opto-electronic morphological processor of the present invention is capable of receiving optical inputs and emitting optical outputs. The use of optics allows implementation of parallel input/output, thereby overcoming a major bottleneck in prior art image processing systems. The processor consists of three components, namely, detectors, morphological operators and modulators. The detectors and operators are fabricated on a silicon VLSI chip and implement the optical input and morphological operations. A layer of ferro-electric liquid crystals is integrated with a silicon chip to provide the optical modulation. The implementation of the image processing operators in electronics leads to a wide range of applications and the use of optical connections allows cascadability of these parallel opto-electronic image processing components and high speed operation. Such an opto-electronic morphological processor may be used as the pre-processing stage in an image recognition system. In one example disclosed herein, the optical input/optical output morphological processor of the invention is interfaced with a binary phase-only correlator to produce an image recognition system.

  6. Characterization of a PET detector head based on continuous LYSO crystals and monolithic, 64-pixel silicon photomultiplier matrices.

    PubMed

    Llosá, G; Barrio, J; Lacasta, C; Bisogni, M G; Del Guerra, A; Marcatili, S; Barrillon, P; Bondil-Blin, S; de la Taille, C; Piemonte, C

    2010-12-01

    The characterization of a PET detector head based on continuous LYSO crystals and silicon photomultiplier (SiPM) arrays as photodetectors has been carried out for its use in the development of a small animal PET prototype. The detector heads are composed of a continuous crystal and a SiPM matrix with 64 pixels in a common substrate, fabricated specifically for this project. Three crystals of 12 mm × 12 mm × 5 mm size with different types of painting have been tested: white, black and black on the sides but white on the back of the crystal. The best energy resolution, obtained with the white crystal, is 16% FWHM. The detector response is linear up to 1275 keV. Tests with different position determination algorithms have been carried out with the three crystals. The spatial resolution obtained with the center of gravity algorithm is around 0.9 mm FWHM for the three crystals. As expected, the use of this algorithm results in the displacement of the reconstructed position toward the center of the crystal, more pronounced in the case of the white crystal. A maximum likelihood algorithm has been tested that can reconstruct correctly the interaction position of the photons also in the case of the white crystal.

  7. Photovoltaic manufacturing technology monolithic amorphous silicon modules on continuous polymer substrates: Final technical report, July 5, 1995--December 31, 1999

    SciTech Connect

    Jeffrey, F.

    2000-03-28

    Iowa Thin Film Technologies is completing a three-phase program that has increased throughput and decreased costs in nearly all aspects of its thin-film photovoltaic manufacturing process. The overall manufacturing costs have been reduced by 61 percent through implementation of the improvements developed under this program. Development of the ability to use a 1-mil substrate, rather than the standard 2-mil substrate, results in a 50 percent cost-saving for this material. Process development on a single-pass amorphous silicon deposition system has resulted in a 37 percent throughput improvement. A wide range of process and machine improvements have been implemented on the transparent conducting oxide deposition system. These include detailed parameter optimization of deposition temperatures, process gas flows, carrier gas flows, and web speeds. An overall process throughput improvement of 275 percent was achieved based on this work. The new alignment technique was developed for the laser scriber and printer systems, which improved registration accuracy from 100 microns to 10 microns. The new technique also reduced alignment time for these registration systems significantly. This resulted in a throughput increase of 75 percent on the scriber and 600 percent on the printer. Automated techniques were designed and implemented for the module assembly processes. These include automated busbar attachment, roll-based lamination, and automated die cutting of finished modules. These processes were previously done by hand labor. Throughput improvements ranged from 200 percent to 1200 percent, relative to hand labor rates. A wide range of potential encapsulation materials were evaluated for suitability in a roll lamination process and for cost-effectiveness. A combination material was found that has a cost that is only 10 percent of the standard EVA/Tefzel cost and is suitable for medium-lifetime applications. The 20-year lifetime applications still require the more expensive

  8. Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

    2000-01-01

    Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

  9. GaAs-based optoelectronic neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H. (Inventor); Kim, Jae H. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

  10. An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.

    PubMed

    Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

    2012-12-17

    An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

  11. Monolithic ceramics

    NASA Technical Reports Server (NTRS)

    Herbell, Thomas P.; Sanders, William A.

    1992-01-01

    A development history and current development status evaluation are presented for SiC and Si3N4 monolithic ceramics. In the absence of widely sought improvements in these materials' toughness, and associated reliability in structural applications, uses will remain restricted to components in noncritical, nonman-rated aerospace applications such as cruise missile and drone gas turbine engine components. In such high temperature engine-section components, projected costs lie below those associated with superalloy-based short-life/expendable engines. Advancements are required in processing technology for the sake of fewer and smaller microstructural flaws.

  12. Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

    SciTech Connect

    Zhang, Y.; Melnikov, A.; Mandelis, A.; Halliop, B.; Kherani, N. P.; Zhu, R.

    2015-03-15

    A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.

  13. Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: multi-parameter measurement reliability and precision studies.

    PubMed

    Zhang, Y; Melnikov, A; Mandelis, A; Halliop, B; Kherani, N P; Zhu, R

    2015-03-01

    A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters. PMID:25832239

  14. First-principles investigation of electronic structures and properties of impurities in molecular solids and semiconductors: I. Muon and muonium in organic ferromagnets. II. Erbium in silicon-optoelectronic system

    NASA Astrophysics Data System (ADS)

    Jeong, Junho

    The first-principles Hartree-Fock theory is used to obtain the electronic structures and properties of three different systems. For the TEMPO system, the trapping sites were obtained near NO group site for muonium singlet and near chlorine and bridge nitrogen for muon. The calculated hyperfine interactions including relaxation and vibrational effect were used to compare the observed zero field muSR frequency 3.2 MHz. It has been concluded that the two trapping centers that can best explain the observed muSR frequency is trapped singlet muonium near the radical oxygen and a trapped muon site near the chlorine. The direction for the easy axis is determined to be the b-axis of the monoclinic lattice and also is obtained using the magnetic moment distributions in the ferromagnetic state in the absence of muon and muonium. The nuclear quadrupole coupling constants and asymmetry parameters (eta) have studied for the 35Cl, 17O, and 14N nuclei in the TEMPO system for the bare system and systems with trapped muon and muonium. Substantial influence of the muon and muonium on the coupling constants and eta for the nuclei close to the trapping sites have been observed for the systems with trapped muon and muonium. For the beta-NPNN, the observed muSR signal at zero field with frequency 2.1 MHz is assigned to the singlet muonium sites near the two oxygens of the two NO groups and the high frequency signal ascribed to an isotropic hyperfine constant of 400MHz is assigned to the trapped muon sites near the oxygen atoms of the NO groups. Er3+-Si material which emits 1.54 mum wavelength has led to interest in optoelectronic system. Using first-principles HF procedure, the locations of Er3+ in silicon cluster without codopant were determined. Since covalent radius of Er3+ is bigger than that of silicon, the first nearest and second nearest silicon of Er3+ for Hi (Er3+Si14H18), Ti (Er3+ Si10H16, Er3+Si26H 48), and Substitutional site (Er3+Si18H 36) applied relaxation effect. The

  15. Chip scale low dimensional materials: optoelectronics & nonlinear optics

    NASA Astrophysics Data System (ADS)

    Gu, Tingyi

    The CMOS foundry infrastructure enables integration of high density, high performance optical transceivers. We developed integrated devices that assemble resonators, waveguide, tapered couplers, pn junction and electrodes. Not only the volume standard manufacture in silicon foundry is promising to low-lost optical components operating at IR and mid-IR range, it also provides a robust platform for revealing new physical phenomenon. The thesis starts from comparison between photonic crystal and micro-ring resonators based on chip routers, showing photonic crystal switches have small footprint, consume low operation power, but its higher linear loss may require extra energy for signal amplification. Different designs are employed in their implementation in optical signal routing on chip. The second part of chapter 2 reviews the graphene based optoelectronic devices, such as modulators, lasers, switches and detectors, potential for group IV optoelectronic integrated circuits (OEIC). In chapter 3, the highly efficient thermal optic control could act as on-chip switches and (transmittance) tunable filters. Local temperature tuning compensates the wavelength differences between two resonances, and separate electrode is used for fine tuning of optical pathways between two resonators. In frequency domain, the two cavity system also serves as an optical analogue of Autler-Towns splitting, where the cavity-cavity resonance detuning is controlled by the length of pathway (phase) between them. The high thermal sensitivity of cavity resonance also effectively reflects the heat distribution around the nanoheaters, and thus derives the thermal conductivity in the planar porous suspended silicon membrane. Chapter 4 & 5 analyze graphene-silicon photonic crystal cavities with high Q and small mode volume. With negligible nonlinear response to the milliwatt laser excitation, the monolithic silicon PhC turns into highly nonlinear after transferring the single layer graphene with

  16. Optical sensors based on monolithic integrated organic light-emitting diodes (OLEDs)

    NASA Astrophysics Data System (ADS)

    Reckziegel, S.; Kreye, D.; Puegner, T.; Grillberger, C.; Toerker, M.; Vogel, U.; Amelung, J.

    2008-04-01

    Organic light-emitting diodes (OLEDs) permit the monolithic integration of microelectronic circuits and light-emitting devices on the same silicon chip. By the use of integrated photodetectors, low-cost CMOS processes and simple packaging; economically produced optoelectronic integrated circuits (OEICs) with combined sensors and actuating elements can be realized. The OLEDs are deposited directly on the top metal layer. The metal layer serves as electrode and defines the bright area. Furthermore, the area below the electrodes can be used for integrated circuits. Due to efficient emitter with low operating voltage it is possible to renounce high-voltage devices depending on selected CMOS process. Thus manufacturing cost can be further reduced. Different CMOS metallizations were examined and their effects on organic light-emitting diodes were analyzed. Red (628nm) and orange (597nm) emitting p-i-n OLEDs with a radiance of 5W/m2sr at 2.8V and 3.0V and a half angle of +/-45° were realized on metal layer with low roughness. Near infra-red emitters are in development. We will present an optical microsystem. The functionality of combined sensors and actuating elements as well as advantages and difficulties of the monolithic integration of OLEDs and CMOS will be discussed. The chip was manufactured in a commercial 1μm CMOS technology. The fabricated microsystem combines three different types of sensors: a reflective sensor, a colour sensor and a particle flow sensor.

  17. Low-cost packaging of high-performance optoelectronic components

    SciTech Connect

    Lowry, M.; Lu, Shin-Yee; Pocha, M.; Strand, O.T.

    1994-08-01

    Optoelectronic component costs are often dominated by the costs of attaching fiber optic pigtails--especially for the case of single transverse mode devices. We present early results of our program in low-cost packaging. We are employing machine-vision controlled automated positioning and silicon microbench technology to reduce the costs of optoelectronic components. Our machine vision approach to automated positioning has already attained a positional accuracy of less than 5 microns in less than 5 minutes; accuracies and times are expected to improve significantly as the development progresses. Complementing the machine vision assembly is our manufacturable approach to silicon microbench technology. We will describe our silicon microbench optoelectronic device packages that incorporate built-in heaters for solder bonding reflow.

  18. OSA proceedings on picosecond electronics and optoelectronics

    SciTech Connect

    Sollner, T.C.L.G. . Lincoln Lab.); Bloom, D.M. . Edward L. Ginzton Lab.)

    1989-01-01

    This book presents an introduction to optical communications. Systems considerations of this important application of optoelectronics are used to provide the motivation for many of the papers that follow. The authors are also concerned with another optoelectronic application, the measurement of phenomena that take place on a picosecond time scale. Short optical or electrical pulses are used to sample the parameter of interest, usually electric fields, in electronic or optoelectronic devices and circuits. Several methods of sampling are described, as are improvements to components that make up these systems. The authors address the electronic and optoelectronic components that lay the foundation for the systems considered above. Diode laser chirping, picosecond optical pulse amplifiers, a spread-spectrum approach to modulation, and two novel methods of picosecond pulse synthesis are discussed. Papers on tunneling and resonant tunneling are presented. Devices based on these effects have promise in high-speed electronics. Several papers investigate the speed of electron tunneling between two reservoirs and the effect of speed on device performance. Resonant-tunneling diode switches are also considered. This book also covers transistors as well as studies of carrier transport on the picosecond time scale. Excellent results for silicon FETs are given, demonstrating the great flexibility of that established technology.

  19. Optoelectronic Mounting Structure

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  20. Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

    SciTech Connect

    Huang, Bing; Yoon, Mina; Smith, Sean C; Wei, Su-Huai; Deng, Hui-Xiong; Liu, Feng; Lee, Hoonkyung; Sumpter, Bobby G

    2014-01-01

    Silicon is arguably the best electronic material, but not as good an optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable bandgap. At low hydrogen concentrations, four ground states of single- and double-side hydrogenated BS are characterized with dipole-allowed direct (or quasidirect) bandgaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-side hydrogenated BS structures exhibit direct (or quasidirect) bandgaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high-efficiency, optoelectronic applications.

  1. New generation of high-efficiency optoelectronic devices and systems for transportation: infrastructure equipment

    NASA Astrophysics Data System (ADS)

    Adonin, Alexej S.; Ermakov, Oleg N.

    2002-04-01

    Review is presented for optoelectronic products market present state and global development trends. The steady positive dynamics of optoelectronic products market is noted. Presented economical data reveal the large capacity of optoelectronics market and hard competition between leading manufacturers of optoelectronic products. The clear trend is emphasized for applications range widening of optoelectronic devices and their based systems, this trend being caused by radical progress in new high-efficiency optoelectronic materials synthesis and their based bulk and quantum - confined heterostructures. Different applications of optoelectronic devices and systems in transportation infrastructure are considered. Company R&D program is briefly reviewed, including silicon - on - sapphire (SOS) technology, direct deposition technology of A3 B5 and A2 B6 compounds on Si and sapphire, microporous Si and electroluminescent polymers technologies.

  2. Monolithic Optical-To-Electronic Receiver

    NASA Technical Reports Server (NTRS)

    Kunath, Richard; Mactaggert, Ross

    1994-01-01

    Monolithic optoelectronic integrated circuit converts multiplexed digital optical signals into electrical signals, separates, and distributes them to intended destinations. Developed to deliver phase and amplitude commands to monolithic microwave integrated circuits (MMIC's) at elements of millimeter-wave phased-array antenna from single optical fiber driven by external array controller. Also used in distribution of high-data-rate optical communications in local-area networks (LAN's). Notable features include options for optical or electrical clock inputs; outputs for raw data, addresses, and instructions for diagnosis; and optical-signal-detection circuit used to reduce power consumption by 80 percent between data-transmission times. Chip fabricated by processes available at many major semiconductor foundries. Distribution of digital signals in aircraft, automobiles, and ships potential application.

  3. Advances in optoelectronic oscillators

    NASA Astrophysics Data System (ADS)

    Nguimdo, Romain M.; Saleh, Khaldoun; Lin, Guoping; Matinenghi, Romain; Chembo, Yanne K.

    2016-02-01

    Optoelectronic oscillators are used for a wide variety of applications in microwave photonics. We here report the latest advances in this technology from our research group, with emphasis on the analysis of phase noise performance. We present a stochastic modelling approach for phase noise performance analysis of optoelectronic oscillators based on whispering gallery mode resonators and/or optical fiber delay lines, and the theory is complemented with experimental measurements. We provide a detailed theoretical analysis which enables us to find the stationary states of the system as well as their stability. Our calculations also permit to find explicit formulas for the phase noise spectra, thereby allowing for their optimization.

  4. Optoelectronic integrated circuits

    NASA Astrophysics Data System (ADS)

    Forrest, Stephen R.

    1987-11-01

    The technology development requirements of several generic photonic systems for advanced optoelectronic ICs are currently being met by the fabrication of highly functional integrated transmitters, receivers, modulators, and arrays of such devices. Attention is presently given to illustrative examples of each of these, as well as of other 'archetypal' ICs. It is noted that the materials-growth techniques employed in optoelectronic IC structures constitute the foundation of their development hierarchy; the primary pacer of development progress is therefore the rapidity of advancements in epitaxial materials-growth technology.

  5. Optoelectronic packaging: A review

    SciTech Connect

    Carson, R.F.

    1993-09-01

    Optoelectronics and photonics hold great potential for high data-rate communication and computing. Wide using in computing applications was limited first by device technologies and now suffers due to the need for high-precision, mass-produced packaging. The use of phontons as a medium of communication and control implies a unique set of packaging constraints that was not present in traditional telecommunications applications. The state-of-the-art in optoelectronic packaging is now driven by microelectric techniques that have potential for low cost and high volume manufacturing.

  6. Surface modified aerogel monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas (Inventor); Johnston, James C. (Inventor); Kuczmarski, Maria A. (Inventor); Meador, Mary Ann B. (Inventor)

    2013-01-01

    This invention comprises reinforced aerogel monoliths such as silica aerogels having a polymer coating on its outer geometric surface boundary, and to the method of preparing said aerogel monoliths. The polymer coatings on the aerogel monoliths are derived from polymer precursors selected from the group consisting of isocyanates as a precursor, precursors of epoxies, and precursors of polyimides. The coated aerogel monoliths can be modified further by encapsulating the aerogel with the polymer precursor reinforced with fibers such as carbon or glass fibers to obtain mechanically reinforced composite encapsulated aerogel monoliths.

  7. The effect of irradiation on the stability and properties of monolithic silicon carbide and SiC{sub f}/SiC composites up to 25 dpa

    SciTech Connect

    Hollenberg, G.W.; Henager, C.H. Jr.; Youngblood, G.E.; Trimble, D.J.; Simonson, S.A.; Newsome, G.A.; Lewis, E.

    1994-04-01

    Stability and properties of monolithic and SiC{sub f}/SiC composites were measured before and after irradiation in a fast neutron spectrum up to 25 dpa between 500 and 1500C. Dimensional changes were relatively consistent with previous investigations. Strength and modulus of SiC{sub f}/SiC composites decreased after irradiation as a result of fiber/matrix decoupling. For some composites, uniform elongation was not significantly degraded by irradiation. Thermal conductivity also decreased after irradiation at low temperatures because of the introduction of lattice defects as phonon scattering sites. Retention of properties under the severe conditions of 25 dpa and 800C suggests that a composite tailored for neutron damage resistance can be developed.

  8. Design of a back-illuminated, crystallographically etched, silicon-on-sapphire avalanche photodiode with monolithically integrated microlens, for dual-mode passive & active imaging arrays

    NASA Astrophysics Data System (ADS)

    Stern, Alvin G.; Cole, Daniel C.

    2008-12-01

    There is a growing need in space and environmental research applications for dual-mode, passive and active 2D and 3D ladar imaging methods. To fill this need, an advanced back-illuminated avalanche photodiode (APD) design is presented based on crystallographically etched (100) epitaxial silicon on R-plane sapphire (SOS), enabling single photon sensitive, solid-state focal plane arrays (FPAs) with wide dynamic range, supporting passive and active imaging capability in a single FPA. When (100) silicon is properly etched with KOH:IPA:H2O solution through a thermally grown oxide mask, square based pyramidal frustum or mesa arrays result with the four mesa sidewalls of the APD formed by (111) silicon planes that intersect the (100) planes at a crystallographic angle, Φc = 54.7°. The APD device is fabricated in the mesa using conventional silicon processing technology. Detectors are back-illuminated through light focusing microlenses fabricated in the thinned, AR-coated sapphire substrate. The APDs share a common, front-side anode contact, made locally at the base of each device mesa. A low resistance (Al) or (Cu) metal anode grid fills the space between pixels and also inhibits optical cross-talk. SOS-APD arrays are indium bump-bonded to CMOS readout ICs to produce hybrid FPAs. The quantum efficiency for the square 27 µm pixels exceeds 50% for 250 nm < λ < 400 nm and exceeds 80% for 400 nm < λ < 700 nm. The sapphire microlenses compensate detector quantum efficiency loss resulting from the mesa geometry and yield 100% sensitive-area-fill-factor arrays, limited in size only by the wafer diameter.

  9. A deep etching mechanism for trench-bridging silicon nanowires.

    PubMed

    Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Alaca, B Erdem

    2016-03-01

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

  10. A deep etching mechanism for trench-bridging silicon nanowires

    NASA Astrophysics Data System (ADS)

    Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Erdem Alaca, B.

    2016-03-01

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

  11. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986

    SciTech Connect

    Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

    1988-09-01

    This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

  12. Photovoltaic manufacturing technology monolithic amorphous silicon modules on continuous polymer substrates. Annual technical progress report, July 5, 1996--December 31, 1997

    SciTech Connect

    Jeffrey, F.

    1998-08-01

    Iowa Thin Film Technologies, Inc.`s (ITF) goal is to develop the most cost effective PV manufacturing process possible. To this end the authors have chosen a roll based manufacturing process with continuous deposition and monolithic integration. Work under this program is designed to meet this goal by improving manufacturing throughput and performance of the manufactured devices. Significant progress was made during Phase 2 of this program on a number of fronts. A new single pass tandem deposition machine was brought on line which allows greatly increased and improved throughput for rolls of tandem material. The TCO deposition process was improved resulting in an increase in throughput by 20%. A new alignment method was implemented on the printing process which improves throughput six fold while improving alignment from 100 {micro}m to 10 {micro}m. A roll based lamination procedure was developed and implemented on selected products which improves throughput from 20 sq. ft./hr. to 240 sq. ft./hr. A wide range of lower cost encapsulants were evaluated. A promising material was selected initially to be introduced in 5 year lifetime type products. The sum of these improvements bring the overall cost reduction resulting from this program to 49%.

  13. Picosecond optoelectronic devices

    SciTech Connect

    Lee, C.L.

    1984-01-01

    Ever since the invention of picosecond lasers, scientists and electronic engineers have been dreaming of inventing electronic devices that can record in real time the physical and electronic events that take place on picosecond time scales. With the exception of the expensive streak camera, this dream has been largely unfullfilled. Today, a real-time oscilloscope with picosecond time resolution is still not available. To fill the need for even better time resolution, researchers have turned to optical pulses and thus a hybrid technology has emerged-picosecond optoelectronics. This technology, based on bulk photoconductors, has had a slow start. However, because of the simplicity, scaleability, and jitterfree nature of the devices, the technology has recently experienced a rapid growth. This volume reviews the major developments in the field of picosecond optoelectronics over the past decade.

  14. Towards optoelectronic urea biosensors.

    PubMed

    Pokrzywnicka, Marta; Koncki, Robert; Tymecki, Łukasz

    2015-03-01

    Integration of immobilized enzymes with light-emitting diodes (LEDs) leads to the development of optoelectronic enzyme-based biosensors. In this work, urease, used as a model enzyme, immobilized in the form of an open-tubular microbioreactor or biosensing membrane that has been integrated with two red LEDs. It forms complete, fiberless, miniaturized, and extremely economic biooptoelectronic devices useful for nonstationary measurements under flow analysis conditions. Both enzyme-based biodevices, operating according to the paired emitter detector diode (PEDD) principle, allow relatively fast, highly sensitive, and well-reproducible urea detection in the millimolar range of concentrations. Potential analytical applications of the developed urea bioPEDDs have been announced. Both presented constructions will be easily adapted for the development of other optoelectronic biosensors exploring various enzyme-based schemes of biodetection. PMID:25619983

  15. Design of a silicon avalanche photodiode pixel with integrated laser diode using back-illuminated crystallographically etched silicon-on-sapphire with monolithically integrated microlens for dual-mode passive and active imaging arrays

    NASA Astrophysics Data System (ADS)

    Stern, Alvin G.

    2010-08-01

    There is a growing need in scientific research applications for dual-mode, passive and active 2D and 3D LADAR imaging methods. To fill this need, an advanced back-illuminated silicon avalanche photodiode (APD) design is presented using a novel silicon-on-sapphire substrate incorporating a crystalline aluminum nitride (AlN) antireflective layer between the silicon and R-plane sapphire. This allows integration of a high quantum efficiency silicon APD with a gallium nitride (GaN) laser diode in each pixel. The pixel design enables single photon sensitive, solid-state focal plane arrays (FPAs) with wide dynamic range, supporting passive and active imaging capability in a single FPA. When (100) silicon is properly etched with TMAH solution, square based pyramidal frustum or mesa arrays result with the four mesa sidewalls of the APD formed by (111) silicon planes that intersect the (100) planes at a crystallographic angle, φ c = 54.7°. The APD device is fabricated in the mesa using conventional silicon processing technology. The GaN laser diode is fabricated by epitaxial growth inside of an inverted, etched cavity in the silicon mesa. Microlenses are fabricated in the thinned, and AR-coated sapphire substrate. The APDs share a common, front-side anode contact, and laser diodes share a common cathode. A low resistance (Al) or (Cu) metal anode grid fills the space between pixels and also inhibits optical crosstalk. SOS-APD arrays are flip-chip bump-bonded to CMOS readout ICs to produce hybrid FPAs. The square 27 μm emitter-detector pixel achieves SNR > 1 in active detection mode for Lambert surfaces at 1,000 meters.

  16. Complexation of Optoelectronic Systems

    NASA Astrophysics Data System (ADS)

    Boreisho, A. S.; Il‧in, M. Yu.; Konyaev, M. A.; Mikhailenko, A. S.; Morozov, A. V.; Strakhov, S. Yu.

    2016-05-01

    Problems of increasing the efficiency and the functionality of complex optoelectronic systems for monitoring real atmospheric conditions and of their use are discussed. It is shown by the example of a meteorological complex comprising an infrared wind-sensing lidar and an X-range Doppler radar that the complexation of probing systems working in different electromagnetic-radiation ranges opens up new opportunities for determining the meteorological parameters of a turbulent atmosphere and investigating the interaction of radiation with it.

  17. Metal oxides for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  18. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories. PMID:27005918

  19. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  20. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase 2 Semiannual subcontract report, 1 February 1985--31 July 1985

    SciTech Connect

    Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.W.; D'Aiello, R.V.; Dickson, C.R.; Newton, J.L.; O'Dowd, J.G.; Oswald, R.S.

    1988-09-01

    This report presents results of the second phase of research in high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. Strong correlations were found between the breakdown voltage, the deposition rate, and the diffusion length for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition using either tetramethyl tine (TMT) or tin tetrachloride (TTC). The best films were grown with TMT, but those grown with TTC had a more controlled texture for light trapping and provided a better contact to the p-layer. Tests indicated that Ti/Al provides a stable, low-resistance back metal contact. Efficiencies of more than 10% were obtained with a p-i-n structure in which a thin, undoped a-Si:C:H layer is first deposited on the tin-oxide-coated glass. The stability of a-Si:H cells was improved by light doping of the i-layer, but the doping also caused a loss in initial performance. A new baseline submodule was designed and an active-area (350 cmS) efficiency of 6.7% was obtained. An active-area (82.5 cmS) efficiency of 6.7% was also obtained with laser scribing techniques. 7 refs., 31 figs., 7 tabs.

  1. Nanomedicine crystals-inspired optoelectronic device materials and processing

    NASA Astrophysics Data System (ADS)

    Fang, Yan; Wang, Fangzhang; Wu, Rong

    2012-02-01

    Aim: Organic, biological materials and soft matters with optoelectronic donors and acceptors are postulated to be novel optoelectronic device materials. Methods: Molecular self-assemblies of nanomedicine crystals are employed by inelastic electron tunneling interaction force, which is a quantum force to make basic units of organic, biological and soft matter with optoelectronic donors and acceptors to be enlarged from nanometers to micrometers on silicon chips. Results: Self-assembled topographic structures and corresponding conducting with kondo effects and photoluminescence properties of self-assembled nanomedicine crystal building blocks are demonstrated by conducting atomic force microscopy (C-AFM) images and current-voltage curves, and laser micro- photoluminescence (PL) spectra. By contrast to top-down processing, the bottom-up processing of molecular self-assembly is low cost on large scale industrial manufacturing. Conclusion: The self-assembled nanomedicine crystal building blocks with optoelectronic donors and acceptors are candidates of novel optoelectronic device materials to be in the emerging discipline of information technology (IT) in its broadest sense, i.e. bioelectronics & biosensors, optoelectronic devices, data storage devices; simple to complex quantum entanglements and superposition for quantum bits computing, a novel strategy for 2020 IT and beyond.

  2. Nanomedicine crystals-inspired optoelectronic device materials and processing

    NASA Astrophysics Data System (ADS)

    Fang, Yan; Wang, Fangzhang; Wu, Rong

    2011-11-01

    Aim: Organic, biological materials and soft matters with optoelectronic donors and acceptors are postulated to be novel optoelectronic device materials. Methods: Molecular self-assemblies of nanomedicine crystals are employed by inelastic electron tunneling interaction force, which is a quantum force to make basic units of organic, biological and soft matter with optoelectronic donors and acceptors to be enlarged from nanometers to micrometers on silicon chips. Results: Self-assembled topographic structures and corresponding conducting with kondo effects and photoluminescence properties of self-assembled nanomedicine crystal building blocks are demonstrated by conducting atomic force microscopy (C-AFM) images and current-voltage curves, and laser micro- photoluminescence (PL) spectra. By contrast to top-down processing, the bottom-up processing of molecular self-assembly is low cost on large scale industrial manufacturing. Conclusion: The self-assembled nanomedicine crystal building blocks with optoelectronic donors and acceptors are candidates of novel optoelectronic device materials to be in the emerging discipline of information technology (IT) in its broadest sense, i.e. bioelectronics & biosensors, optoelectronic devices, data storage devices; simple to complex quantum entanglements and superposition for quantum bits computing, a novel strategy for 2020 IT and beyond.

  3. Reconfigurable high-speed optoelectronic interconnect technology for multiprocessor computers

    NASA Astrophysics Data System (ADS)

    Cheng, Julian

    1995-06-01

    We describe a compact optoelectronic switching technology for interconnecting multiple computer processors and shared memory modules together through dynamically reconfigurable optical paths to provide simultaneous, high speed communication amongst different nodes. Each switch provides a optical link to other nodes as well as electrical access to an individual processor, and it can perform optical and optoelectronic switching to covert digital data between various electrical and optical input/output formats. This multifunctional switching technology is based on the monolithic integration of arrays of vertical-cavity surface-emitting lasers with photodetectors and heterojunction bipolar transistors. The various digital switching and routing functions, as well as optically cascaded multistage operation, have been experimentally demonstrated.

  4. Monolithic exploding foil initiator

    DOEpatents

    Welle, Eric J; Vianco, Paul T; Headley, Paul S; Jarrell, Jason A; Garrity, J. Emmett; Shelton, Keegan P; Marley, Stephen K

    2012-10-23

    A monolithic exploding foil initiator (EFI) or slapper detonator and the method for making the monolithic EFI wherein the exploding bridge and the dielectric from which the flyer will be generated are integrated directly onto the header. In some embodiments, the barrel is directly integrated directly onto the header.

  5. New Monolithic Dome Schools.

    ERIC Educational Resources Information Center

    Parker, Freda

    2000-01-01

    Discusses how the Grand Meadow (Minnesota) school district got more than twice the grant money asked for from the state's legislature as well as voter approval for five new $8 million monolithic domes for their K-12 facility. Three additional school district successes in developing monolithic domes for their schools are examined. (GR)

  6. Neuromorphic opto-electronic integrated circuits for optical signal processing

    NASA Astrophysics Data System (ADS)

    Romeira, B.; Javaloyes, J.; Balle, S.; Piro, O.; Avó, R.; Figueiredo, J. M. L.

    2014-08-01

    The ability to produce narrow optical pulses has been extensively investigated in laser systems with promising applications in photonics such as clock recovery, pulse reshaping, and recently in photonics artificial neural networks using spiking signal processing. Here, we investigate a neuromorphic opto-electronic integrated circuit (NOEIC) comprising a semiconductor laser driven by a resonant tunneling diode (RTD) photo-detector operating at telecommunication (1550 nm) wavelengths capable of excitable spiking signal generation in response to optical and electrical control signals. The RTD-NOEIC mimics biologically inspired neuronal phenomena and possesses high-speed response and potential for monolithic integration for optical signal processing applications.

  7. Optoelectronic reservoir computing.

    PubMed

    Paquot, Y; Duport, F; Smerieri, A; Dambre, J; Schrauwen, B; Haelterman, M; Massar, S

    2012-01-01

    Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations.

  8. Optoelectronic Reservoir Computing

    NASA Astrophysics Data System (ADS)

    Paquot, Y.; Duport, F.; Smerieri, A.; Dambre, J.; Schrauwen, B.; Haelterman, M.; Massar, S.

    2012-02-01

    Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations.

  9. A luminescence lifetime-based capillary oxygen sensor utilizing monolithically integrated organic photodiodes.

    PubMed

    Lamprecht, Bernhard; Tschepp, Andreas; Čajlaković, Merima; Sagmeister, Martin; Ribitsch, Volker; Köstler, Stefan

    2013-10-21

    A novel optical sensor device monolithically integrated on a glass capillary is presented. Therefore, we took advantage of the ability to fabricate organic optoelectronic devices on non-planar substrates. The functionality of the concept is demonstrated by realizing an integrated oxygen sensor based on luminescence decay time measurement.

  10. Optoelectronic technology consortium

    NASA Astrophysics Data System (ADS)

    Hibbs-Brenner, Mary

    1992-12-01

    The Optoelectronics Technology Consortium has been established to position U.S. industry as the world leader in optical interconnect technology by developing, fabricating, intergrating and demonstrating the producibility of optoelectronic components for high-density/high-data-rate processors and accelerating the insertion of this technology into military and commercial applications. This objective will be accomplished by a program focused in three areas. (1) Demonstrated performance: OETC will demonstrate an aggregate data transfer rate of 16 Gbit/s between single transmitter and receiver packages, as well as the expandability of this technology by combing four links in parallel to achieve a 64 Gbit/s link. (2) Accelerated development: By collaborating during precompetitive technology development stage, OTEC will advance the development of optical components and produce links for a multiboard processor testbed demonstration; and (3) Producibility: OETC's technology will achieve this performance by using components that are affordable, and reliable, with a line BER less than 10(exp -15) and MTTF greater than 10(exp 6) hours.

  11. Optoelectronic Reservoir Computing

    PubMed Central

    Paquot, Y.; Duport, F.; Smerieri, A.; Dambre, J.; Schrauwen, B.; Haelterman, M.; Massar, S.

    2012-01-01

    Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations. PMID:22371825

  12. Materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  13. Optoelectronic devices by GSMBE

    NASA Astrophysics Data System (ADS)

    Goldstein, L.

    1990-10-01

    The growth of high quality InP and GaInAsP alloy by gas source molecular beam epitaxy (GSMBE) is of high interest for the realization of optoelectronic devices in the wavelength region of 1.3-1.55 μm. This epitaxial technique is also well adapted to the growth of quantum well structure with very sharp interfaces. Optical devices of high performances, i.e. semiconductor amplifier and distributed feedback multi-quantum well (DFB-MQW) lasers, are fabricated with a hybrid process with GSMBE for the active structure and liquid phase epitaxy (LPE) for the regrowth of lateral confinement layers. These devices show excellent electrical and optical characteristics.

  14. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    PubMed

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems. PMID:27043922

  15. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    PubMed

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.

  16. An optoelectronic integrated device including a laser and its driving circuit

    NASA Astrophysics Data System (ADS)

    Matsueda, H.; Tanaka, T. P.; Nakano, H.

    1984-10-01

    A monolithic optoelectronic integrated circuit (OEIC) including a laser diode, photomonitor and driving and detecting circuits has been fabricated on a semi-insulating GaAs substrate. The OEIC has a horizontal integrating structure which is suitable for realizing high-density multifunctional devices. The fabricating process and the static and dynamic characteristics of the optical and electronic elements are described. The preliminary results of the cooperative operation of the laser and its driving circuit are also presented.

  17. Optoelectronic fringe projection operations

    NASA Astrophysics Data System (ADS)

    Garavaglia, Mario; Rabal, Hector J.; Aguirre, E.

    1990-07-01

    We present a simple optoelectronical fringe projection method for topographic or deformation study of objects. Programmed positioning and repositioning can also be performed. 1. DESCRIPTION An incoherent method for fringe projection operations was recently reported'' using photographic procedures. It is extended now to real time operation using an LCD video projector and a CCD camera. Fringes consisting in Rbnchitype rulings are generated in a personal computer and projected onto an object by using a Kodak LCD colour video projector. Its image is then read by a SVHS-CCD Panasonic camera and electronically memorized. This fringe pattern contains information concerning the position and topography of the object stored as fringe phase modulation. A standard state of the object can be frozen in the screen of a monitor and its evolution deformation or misspositioning followed through the Moire between current and stored fringes. Topography of the object expressed as a mathemati cal functi on h ( x y) and its time evolution can alsO be determined from the memorized data. . Besides a conjugated grid can be generated so that when the latter is projected onto the object the observed fringes are corrected to straight lines resembling the original Ronchi rul ings i. e. distortion produced by object topography is cancelled out. Deformations with respect to this state are straightforwardly interpreted by an observer both in magnitude and sign. The system can be made

  18. Monolithic cells for solar fuels.

    PubMed

    Rongé, Jan; Bosserez, Tom; Martel, David; Nervi, Carlo; Boarino, Luca; Taulelle, Francis; Decher, Gero; Bordiga, Silvia; Martens, Johan A

    2014-12-01

    Hybrid energy generation models based on a variety of alternative energy supply technologies are considered the best way to cope with the depletion of fossil energy resources and to limit global warming. One of the currently missing technologies is the mimic of natural photosynthesis to convert carbon dioxide and water into chemical fuel using sunlight. This idea has been around for decades, but artificial photosynthesis of organic molecules is still far away from providing real-world solutions. The scientific challenge is to perform in an efficient way the multi-electron transfer reactions of water oxidation and carbon dioxide reduction using holes and single electrons generated in an illuminated semiconductor. In this tutorial review the design of photoelectrochemical (PEC) cells that combine solar water oxidation and CO2 reduction is discussed. In such PEC cells simultaneous transport and efficient use of light, electrons, protons and molecules has to be managed. It is explained how efficiency can be gained by compartmentalisation of the water oxidation and CO2 reduction processes by proton exchange membranes, and monolithic concepts of artificial leaves and solar membranes are presented. Besides transferring protons from the anode to the cathode compartment the membrane serves as a molecular barrier material to prevent cross-over of oxygen and fuel molecules. Innovative nano-organized multimaterials will be needed to realise practical artificial photosynthesis devices. This review provides an overview of synthesis techniques which could be used to realise monolithic multifunctional membrane-electrode assemblies, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi) engineering. Advances in modelling approaches, electrochemical techniques and in situ spectroscopies to characterise overall PEC cell performance are discussed.

  19. Monolithic microwave integrated circuits

    NASA Astrophysics Data System (ADS)

    Pucel, R. A.

    Monolithic microwave integrated circuits (MMICs), a new microwave technology which is expected to exert a profound influence on microwave circuit designs for future military systems as well as for the commercial and consumer markets, is discussed. The book contains an historical discussion followed by a comprehensive review presenting the current status in the field. The general topics of the volume are: design considerations, materials and processing considerations, monolithic circuit applications, and CAD, measurement, and packaging techniques. All phases of MMIC technology are covered, from design to testing.

  20. Internally Cooled Monolithic Silicon Nitride Aerospace Components

    NASA Technical Reports Server (NTRS)

    Best, Jonathan E.; Cawley, James D.; Bhatt, Ramakrishna T.; Fox, Dennis S.; Lang, Jerry (Technical Monitor)

    2000-01-01

    A set of rapid prototyping (RP) processes have been combined with gelcasting to make ceramic aerospace components that contain internal cooling geometry. A mold and core combination is made using a MM6Pro (Sanders Prototyping, Inc.) and SLA-250/40 (3Dsystems, Inc.). The MM6Pro produces cores from ProtoBuild (trademarked) wax that are dissolved in room temperature ethanol following gelcasting. The SLA-250/40 yields epoxy/acrylate reusable molds. Parts produced by this method include two types of specimens containing a high density of thin long cooling channels, thin-walled cylinders and plates, as well as a model hollow airfoil shape that can be used for burner rig evaluation of coatings. Both uncoated and mullite-coated hollow airfoils has been tested in a Mach 0.3 burner rig with cooling air demonstrating internal cooling and confirming the effectiveness of mullite coatings.

  1. Optimal parameters of monolithic high-contrast grating mirrors.

    PubMed

    Marciniak, Magdalena; Gębski, Marcin; Dems, Maciej; Haglund, Erik; Larsson, Anders; Riaziat, Majid; Lott, James A; Czyszanowski, Tomasz

    2016-08-01

    In this Letter a fully vectorial numerical model is used to search for the construction parameters of monolithic high-contrast grating (MHCG) mirrors providing maximal power reflectance. We determine the design parameters of highly reflecting MHCG mirrors where the etching depth of the stripes is less than two wavelengths in free space. We analyze MHCGs in a broad range of real refractive index values corresponding to most of the common optoelectronic materials in use today. Our results comprise a complete image of possible highly reflecting MHCG mirror constructions for potential use in optoelectronic devices and systems. We support the numerical analysis by experimental verification of the high reflectance via a GaAs MHCG designed for a wavelength of 980 nm.

  2. Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

    PubMed

    Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

    2012-12-17

    We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

  3. Compact Optoelectronic Compass

    NASA Technical Reports Server (NTRS)

    Christian, Carl

    2004-01-01

    A compact optoelectronic sensor unit measures the apparent motion of the Sun across the sky. The data acquired by this chip are processed in an external processor to estimate the relative orientation of the axis of rotation of the Earth. Hence, the combination of this chip and the external processor finds the direction of true North relative to the chip: in other words, the combination acts as a solar compass. If the compass is further combined with a clock, then the combination can be used to establish a threeaxis inertial coordinate system. If, in addition, an auxiliary sensor measures the local vertical direction, then the resulting system can determine the geographic position. This chip and the software used in the processor are based mostly on the same design and operation as those of the unit described in Micro Sun Sensor for Spacecraft (NPO-30867) elsewhere in this issue of NASA Tech Briefs. Like the unit described in that article, this unit includes a small multiple-pinhole camera comprising a micromachined mask containing a rectangular array of microscopic pinholes mounted a short distance in front of an image detector of the active-pixel sensor (APS) type (see figure). Further as in the other unit, the digitized output of the APS in this chip is processed to compute the centroids of the pinhole Sun images on the APS. Then the direction to the Sun, relative to the compass chip, is computed from the positions of the centroids (just like a sundial). In the operation of this chip, one is interested not only in the instantaneous direction to the Sun but also in the apparent path traced out by the direction to the Sun as a result of rotation of the Earth during an observation interval (during which the Sun sensor must remain stationary with respect to the Earth). The apparent path of the Sun across the sky is projected on a sphere. The axis of rotation of the Earth lies at the center of the projected circle on the sphere surface. Hence, true North (not magnetic

  4. Embedded-monolith armor

    DOEpatents

    McElfresh, Michael W.; Groves, Scott E; Moffet, Mitchell L.; Martin, Louis P.

    2016-07-19

    A lightweight armor system utilizing a face section having a multiplicity of monoliths embedded in a matrix supported on low density foam. The face section is supported with a strong stiff backing plate. The backing plate is mounted on a spall plate.

  5. Monolithic short wave infrared (SWIR) detector array

    NASA Technical Reports Server (NTRS)

    1983-01-01

    A monolithic self-scanned linear detector array was developed for remote sensing in the 1.1- 2.4-micron spectral region. A high-density IRCCD test chip was fabricated to verify new design approaches required for the detector array. The driving factors in the Schottky barrier IRCCD (Pdsub2Si) process development are the attainment of detector yield, uniformity, adequate quantum efficiency, and lowest possible dark current consistent with radiometric accuracy. A dual-band module was designed that consists of two linear detector arrays. The sensor architecture places the floating diffusion output structure in the middle of the chip, away from the butt edges. A focal plane package was conceptualized and includes a polycrystalline silicon substrate carrying a two-layer, thick-film interconnecting conductor pattern and five epoxy-mounted modules. A polycrystalline silicon cover encloses the modules and bond wires, and serves as a radiation and EMI shield, thermal conductor, and contamination seal.

  6. Nanocrystal-based Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Evans, Kenneth; Herzog, Joseph; Ward, Daniel; Natelson, Douglas

    2012-02-01

    Optoelectronic devices capable of detecting and emitting light on a scale well below its wavelength could have a profound impact on basic and applied experimental research in light-based electronics, on-demand photon generation, and for studying poorly understood quantum phenomena such as blinking and spectral wandering. We present a fabrication procedure for ultrasmall, nanocrystal optoelectronic devices based on self-assembled layers of quantum dots in plasmonically-active gold nanogaps. We provide preliminary experimental results which examine the possibility for surfaced-enhanced fluorescence, subwavelength detection and emission of light as well as plasmon-based optical trapping in these systems.

  7. Coupled opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Yao, X. Steve (Inventor); Maleki, Lute (Inventor)

    1999-01-01

    A coupled opto-electronic oscillator that directly couples a laser oscillation with an electronic oscillation to simultaneously achieve a stable RF oscillation at a high frequency and ultra-short optical pulsation by mode locking with a high repetition rate and stability. Single-mode selection can be achieved even with a very long opto-electronic loop. A multimode laser can be used to pump the electronic oscillation, resulting in a high operation efficiency. The optical and the RF oscillations are correlated to each other.

  8. Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

    NASA Astrophysics Data System (ADS)

    Wierer, J. J.; Allerman, A. A.; Skogen, E. J.; Tauke-Pedretti, A.; Alford, C.; Vawter, G. A.; Montaño, I.

    2014-09-01

    Layer disordering and doping compensation of an Al0.028Ga0.972N/AlN superlattice by implantation are demonstrated. The as-grown sample exhibits intersubband absorption at ˜1.56 μm which is modified when subject to a silicon implantation. After implantation, the intersubband absorption decreases and shifts to longer wavelengths. Also, with increasing implant dose, the intersubband absorption decreases. It is shown that both layer disordering of the heterointerfaces and doping compensation from the vacancies produced during the implantation cause the changes in the intersubband absorption. Such a method is useful for removing absorption in spatially defined areas of III-nitride optoelectronic devices by, for example, creating low-loss optical waveguides monolithically that can be integrated with as-grown areas operating as electro-absorption intersubband modulators.

  9. Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

    NASA Technical Reports Server (NTRS)

    Pavlidis, Dimitris

    1991-01-01

    The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

  10. Monolithic MACS micro resonators

    NASA Astrophysics Data System (ADS)

    Lehmann-Horn, J. A.; Jacquinot, J.-F.; Ginefri, J. C.; Bonhomme, C.; Sakellariou, D.

    2016-10-01

    Magic Angle Coil Spinning (MACS) aids improving the intrinsically low NMR sensitivity of heterogeneous microscopic samples. We report on the design and testing of a new type of monolithic 2D MACS resonators to overcome known limitations of conventional micro coils. The resonators' conductors were printed on dielectric substrate and tuned without utilizing lumped element capacitors. Self-resonance conditions have been computed by a hybrid FEM-MoM technique. Preliminary results reported here indicate robust mechanical stability, reduced eddy currents heating and negligible susceptibility effects. The gain in B1 /√{ P } is in agreement with the NMR sensitivity enhancement according to the principle of reciprocity. A sensitivity enhancement larger than 3 has been achieved in a monolithic micro resonator inside a standard 4 mm rotor at 500 MHz. These 2D resonators could offer higher performance micro-detection and ease of use of heterogeneous microscopic substances such as biomedical samples, microscopic specimens and thin film materials.

  11. Monolithic MACS micro resonators.

    PubMed

    Lehmann-Horn, J A; Jacquinot, J-F; Ginefri, J C; Bonhomme, C; Sakellariou, D

    2016-10-01

    Magic Angle Coil Spinning (MACS) aids improving the intrinsically low NMR sensitivity of heterogeneous microscopic samples. We report on the design and testing of a new type of monolithic 2D MACS resonators to overcome known limitations of conventional micro coils. The resonators' conductors were printed on dielectric substrate and tuned without utilizing lumped element capacitors. Self-resonance conditions have been computed by a hybrid FEM-MoM technique. Preliminary results reported here indicate robust mechanical stability, reduced eddy currents heating and negligible susceptibility effects. The gain in B1/P is in agreement with the NMR sensitivity enhancement according to the principle of reciprocity. A sensitivity enhancement larger than 3 has been achieved in a monolithic micro resonator inside a standard 4mm rotor at 500MHz. These 2D resonators could offer higher performance micro-detection and ease of use of heterogeneous microscopic substances such as biomedical samples, microscopic specimens and thin film materials. PMID:27544845

  12. Simple Optoelectronic Feedback in Microwave Oscillators

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Iltchenko, Vladimir

    2009-01-01

    A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

  13. Monolithic Millimeter Wave Oscillator

    NASA Astrophysics Data System (ADS)

    Wang, Nan-Lei

    There is an increasing interest in the millimeter -wave spectrum for use in communications and for military and scientific applications. The concept of monolithic integration aims to produce very-high-frequency circuits in a more reliable, reproducible way than conventional electronics, and also at lower cost, with smaller size and lighter weight. In this thesis, a negative resistance device is integrated monolithically with a resonator to produce an effective oscillator. This work fills the void resulting from the exclusion of the local oscillator from the monolithic millimeter-wave integrated circuit (MMMIC) receiver design. For convenience a microwave frequency model was used to design the resonator circuit. A 5 GHz hybrid oscillator was first fabricated to test the design; the necessary GaAs process technology was developed for the fabrication. Negative resistance devices and oscillator theory were studied, and a simple but practical model of the Gunn diode was devised to solve the impedance matching problem. Monolithic oscillators at the Ka band (35 GHz) were built and refined. All devices operated in CW mode. By means of an electric-field probe, the output power was coupled into a metallic waveguide for measurement purposes. The best result was 3.63 mW of power output, the highest efficiency was 0.43% and the frequency stability was better than 10-4. In the future, an IMPATT diode could replace the Gunn device to give much higher power and efficiency. A varactor-tuned circuit also suitable for large-scale integration is under study.

  14. Monolith electroplating process

    DOEpatents

    Agarrwal, Rajev R.

    2001-01-01

    An electroplating process for preparing a monolith metal layer over a polycrystalline base metal and the plated monolith product. A monolith layer has a variable thickness of one crystal. The process is typically carried in molten salts electrolytes, such as the halide salts under an inert atmosphere at an elevated temperature, and over deposition time periods and film thickness sufficient to sinter and recrystallize completely the nucleating metal particles into one single crystal or crystals having very large grains. In the process, a close-packed film of submicron particle (20) is formed on a suitable substrate at an elevated temperature. The temperature has the significance of annealing particles as they are formed, and substrates on which the particles can populate are desirable. As the packed bed thickens, the submicron particles develop necks (21) and as they merge into each other shrinkage (22) occurs. Then as micropores also close (23) by surface tension, metal density is reached and the film consists of unstable metal grain (24) that at high enough temperature recrystallize (25) and recrystallized grains grow into an annealed single crystal over the electroplating time span. While cadmium was used in the experimental work, other soft metals may be used.

  15. Foil fabrication and barrier layer application for monolithic fuels

    SciTech Connect

    Moore, Glenn A. Clark, Curtis R.; Jue, J.-F.; Swank, W. David; Haggard, D.C.; Chapple, Michael D.; Burkes, Douglas E.

    2008-07-15

    This presentation provides details of recent UMo fuel developments efforts at the Idaho National Laboratory. Processing of monolithic fuel foil, the friction bonding process, and hot isostatic press (HIP) sample preparation will be presented. Details of the hot rolling, foil annealing, zirconium barrier-layer application to U10Mo fuel foils via the hot-rolling process and application of silicon rich aluminum interfacial-layers via a thermal spray process will be presented. (author)

  16. III-Nitride nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  17. Optoelectronic device for hematocrit measurements

    NASA Astrophysics Data System (ADS)

    Pluta, M.; Milewska, D.; Mazikowski, A.

    2015-09-01

    An optoelectronic system for measurements of hematocrit level (HCT) in the whole human blood is presented. Proposed system integrates a dedicated optoelectronic sensor, a microcontroller and a small LCD display in a low cost, battery-powered, handheld device. Chosen method for determining blood hematocrit level is based on optical properties of whole blood in visible and NIR wavelength range. Measurements with the use of proposed system require blood samples (small drop in the range of microliters) which is placed in the micro cuvette. Then, absorption of the sample is measured at wavelengths of 570 nm and 880 nm. Prototype of the device was build and tested. Test results confirmed proper operation of the device with correct metrological parameters in application to HCT level measurements. Such a portable device can be used as a tool of bedside diagnosis, which becomes interesting alternative to full laboratory tests.

  18. Optoelectronic Apparatus Measures Glucose Noninvasively

    NASA Technical Reports Server (NTRS)

    Ansari, Rafat R.; Rovati, Luigi L.

    2003-01-01

    An optoelectronic apparatus has been invented as a noninvasive means of measuring the concentration of glucose in the human body. The apparatus performs polarimetric and interferometric measurements of the human eye to acquire data from which the concentration of glucose in the aqueous humor can be computed. Because of the importance of the concentration of glucose in human health, there could be a large potential market for instruments based on this apparatus.

  19. Optoelectronic Oscillators for Communication Systems

    NASA Astrophysics Data System (ADS)

    Romeira, Bruno; Figueiredo, José

    We introduce and report recent developments on a novel five port optoelectronic voltage controlled oscillator consisting of a resonant tunneling diode (RTD) optical-waveguide integrated with a laser diode. The RTD-based optoelectronic oscillator (OEO) has both optical and electrical input and output ports, with the fifth port allowing voltage control. The RTD-OEO locks to reference radio-frequency (RF) sources by either optical or electrical injection locking techniques allowing remote synchronization, eliminating the need of impedance matching between traditional RF oscillators. RTD-OEO functions include generation, amplification and distribution of RF carriers, clock recovery, carrier recovery, modulation and demodulation and frequency synthesis. Self-injection locking operation modes, where small portions of the output electrical/optical signals are fed back into the electrical/optical input ports, are also proposed. The self-phase locked loop configuration can give rise to low-noise high-stable oscillations, not limited by the RF source performance and with no need of external optoelectronic conversion.

  20. Nanofabrication of Hybrid Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Dibos, Alan Michael

    The material requirements for optoelectronic devices can vary dramatically depending on the application. Often disparate material systems need to be combined to allow for full device functionality. At the nanometer scale, this can often be challenging because of the inherent chemical and structural incompatibilities of nanofabrication. This dissertation concerns the integration of seemingly dissimilar materials into hybrid optoelectronic devices for photovoltaic, plasmonic, and photonic applications. First, we show that combining a single strip of conjugated polymer and inorganic nanowire can yield a nanoscale solar cell, and modeling of optical absorption and exciton diffusion in this device can provide insight into the efficiency of charge separation. Second, we use an on-chip nanowire light emitting diode to pump a colloidal quantum dot coupled to a silver waveguide. The resulting device is an electro-optic single plasmon source. Finally, we transfer diamond waveguides onto near-field avalanche photodiodes fabricated from GaAs. Embedded in the diamond waveguides are nitrogen vacancy color centers, and the mapping of emission from these single-photon sources is demonstrated using our on-chip detectors, eliminating the need for external photodetectors on an optical table. These studies show the promise of hybrid optoelectronic devices at the nanoscale with applications in alternative energy, optical communication, and quantum optics.

  1. Monolithic tandem solar cell

    DOEpatents

    Wanlass, Mark W.

    1991-01-01

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

  2. Monolithic microfluidic concentrators and mixers

    DOEpatents

    Frechet, Jean M.; Svec, Frantisek; Yu, Cong; Rohr, Thomas

    2005-05-03

    Microfluidic devices comprising porous monolithic polymer for concentration, extraction or mixing of fluids. A method for in situ preparation of monolithic polymers by in situ initiated polymerization of polymer precursors within microchannels of a microfluidic device and their use for solid phase extraction (SPE), preconcentration, concentration and mixing.

  3. Design of monoliths through their mechanical properties.

    PubMed

    Podgornik, Aleš; Savnik, Aleš; Jančar, Janez; Krajnc, Nika Lendero

    2014-03-14

    Chromatographic monoliths have several interesting properties making them attractive supports for analytics but also for purification, especially of large biomolecules and bioassemblies. Although many of monolith features were thoroughly investigated, there is no data available to predict how monolith mechanical properties affect its chromatographic performance. In this work, we investigated the effect of porosity, pore size and chemical modification on methacrylate monolith compression modulus. While a linear correlation between pore size and compression modulus was found, the effect of porosity was highly exponential. Through these correlations it was concluded that chemical modification affects monolith porosity without changing the monolith skeleton integrity. Mathematical model to describe the change of monolith permeability as a function of monolith compression modulus was derived and successfully validated for monoliths of different geometries and pore sizes. It enables the prediction of pressure drop increase due to monolith compressibility for any monolith structural characteristics, such as geometry, porosity, pore size or mobile phase properties like viscosity or flow rate, based solely on the data of compression modulus and structural data of non-compressed monolith. Furthermore, it enables simple determination of monolith pore size at which monolith compressibility is the smallest and the most robust performance is expected. Data of monolith compression modulus in combination with developed mathematical model can therefore be used for the prediction of monolith permeability during its implementation but also to accelerate the design of novel chromatographic monoliths with desired hydrodynamic properties for particular application.

  4. Monolithic THz Frequency Multipliers

    NASA Technical Reports Server (NTRS)

    Erickson, N. R.; Narayanan, G.; Grosslein, R. M.; Martin, S.; Mehdi, I.; Smith, P.; Coulomb, M.; DeMartinez, G.

    2001-01-01

    Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.

  5. Monolithic ballasted penetrator

    DOEpatents

    Hickerson, Jr., James P.; Zanner, Frank J.; Baldwin, Michael D.; Maguire, Michael C.

    2001-01-01

    The present invention is a monolithic ballasted penetrator capable of delivering a working payload to a hardened target, such as reinforced concrete. The invention includes a ballast made from a dense heavy material insert and a monolithic case extending along an axis and consisting of a high-strength steel alloy. The case includes a nose end containing a hollow portion in which the ballast is nearly completely surrounded so that no movement of the ballast relative to the case is possible during impact with a hard target. The case is cast around the ballast, joining the two parts together. The ballast may contain concentric grooves or protrusions that improve joint strength between the case and ballast. The case further includes a second hollow portion; between the ballast and base, which has a payload fastened within this portion. The penetrator can be used to carry instrumentation to measure the geologic character of the earth, or properties of arctic ice, as they pass through it.

  6. Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

    NASA Technical Reports Server (NTRS)

    Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. B.

    1990-01-01

    Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

  7. Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

    NASA Astrophysics Data System (ADS)

    Liang, Yu Teng

    coatings have been demonstrated. In particular, co-deposited platinum, silicon, and carbon nanomaterial films were fashioned into electronic hydrogen gas sensors, cost efficient dye sensitized solar cell electrodes, and high capacity lithium ion battery anodes. Furthermore, concentrated graphene inks were coated to form aligned graphene-polymer nanocomposites and outstanding carbon nanotube-graphene hybrid semitransparent electrical conductors. Nanocomposite graphene-titanium dioxide catalysts produced from these cellulosic inks have low covalent defect densities and were shown to be approximately two and seven times more active than those based on reduced graphene oxide in photo-oxidation and photo-reduction reactions, respectively. Using a broad range of material characterization techniques, mechanistic insight was obtained using composite photocatalysts fabricated from well defined nanomaterials. For instance, optical spectroscopy and electronic measurements revealed a direct correlation between graphene charge transport performance and composite photochemical activity. Moreover, investigations into multidimensional composites based on 1D carbon nanotubes, 2D graphene, and 2D titanium dioxide nanosheets generated additional mechanistic insight for extending photocatalytic spectral response and increasing reaction specificity. Together, these results demonstrate the versatility of vacuum co-deposition and cellulosic nanomaterial inks for fabricating carbon nanocomposite optoelectronic and energy conversion coatings.

  8. Optoelectronic tweezers for medical diagnostics

    NASA Astrophysics Data System (ADS)

    Kremer, Clemens; Neale, Steven; Menachery, Anoop; Barrett, Mike; Cooper, Jonathan M.

    2012-01-01

    Optoelectronic tweezers (OET) allows the spatial patterning of electric fields through selected illumination of a photoconductive surface. This enables the manipulation of micro particles and cells by creating non-uniform electrical fields that then produce dielectrophoretic (DEP) forces. The DEP responses of cells differ and can produce negative or positive (repelled or attracted to areas of high electric field) forces. Therefore OET can be used to manipulate individual cells and separate different cell types from each other. Thus OET has many applications for medical diagnostics, demonstrated here with work towards diagnosing Human African Trypanosomiasis, also known as sleeping sickness.

  9. Cell rotation using optoelectronic tweezers.

    PubMed

    Liang, Yuan-Li; Huang, Yuan-Peng; Lu, Yen-Sheng; Hou, Max T; Yeh, J Andrew

    2010-01-01

    A cell rotation method by using optoelectronic tweezers (OET) is reported. The binary image of a typical OET device, whose light and dark sides act as two sets of parallel plates with different ac voltages, was used to create a rotating electric field. Its feasibility for application to electrorotation of cells was demonstrated by rotating Ramos and yeast cells in their pitch axes. The electrorotation by using OET devices is dependent on the medium and cells' electrical properties, the cells' positions, and the OET device's geometrical dimension, as well as the frequency of the electric field. PMID:21267435

  10. Integrated Optoelectronics for Parallel Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Stirbl, Robert; Moynihan, Philip; Bearman, Gregory; Lane, Arthur

    2003-01-01

    Miniature, relatively inexpensive microbioanalytical systems ("laboratory-on-achip" devices) have been proposed for the detection of hazardous microbes and toxic chemicals. Each system of this type would include optoelectronic sensors and sensor-output-processing circuitry that would simultaneously look for the optical change, fluorescence, delayed fluorescence, or phosphorescence signatures from multiple redundant sites that have interacted with the test biomolecules in order to detect which one(s) was present in a given situation. These systems could be used in a variety of settings that could include doctors offices, hospitals, hazardous-material laboratories, biological-research laboratories, military operations, and chemical-processing plants.

  11. Monolithic freeform element

    NASA Astrophysics Data System (ADS)

    Kiontke, Sven R.

    2015-09-01

    For 10 years there has been the asphere as one of the new products to be accepted by the market. All parts of the chain design, production and measurement needed to learn how to treat the asphere and what it is helpful for. The aspheric optical element now is established and accepted as an equal optical element between other as a fast growing part of all the optical elements. Now we are focusing onto the next new element with a lot of potential, the optical freeform surface. Manufacturing results will be shown for fully tolerance optic including manufacturing, setup and optics configurations including measurement setup. The element itself is a monolith consisting of several optical surfaces that have to be aligned properly to each other. The freeform surface is measured for surface form tolerance (irregularity, slope, Zernike, PV).

  12. Monolithically compatible impedance measurement

    DOEpatents

    Ericson, Milton Nance; Holcomb, David Eugene

    2002-01-01

    A monolithic sensor includes a reference channel and at least one sensing channel. Each sensing channel has an oscillator and a counter driven by the oscillator. The reference channel and the at least one sensing channel being formed integrally with a substrate and intimately nested with one another on the substrate. Thus, the oscillator and the counter have matched component values and temperature coefficients. A frequency determining component of the sensing oscillator is formed integrally with the substrate and has an impedance parameter which varies with an environmental parameter to be measured by the sensor. A gating control is responsive to an output signal generated by the reference channel, for terminating counting in the at least one sensing channel at an output count, whereby the output count is indicative of the environmental parameter, and successive ones of the output counts are indicative of changes in the environmental parameter.

  13. Pickled luminescent silicon nanostructures

    NASA Astrophysics Data System (ADS)

    Boukherroub, R.; Morin, S.; Wayner, D. D. M.; Lockwood, D. J.

    2001-05-01

    In freshly prepared porous Si, the newly exposed silicon-nanostructure surface is protected with a monolayer of hydrogen, which is very reactive and oxidizes in air leading to a loss of luminescence intensity and a degradation of the electronic properties. We report a surface passivation approach based on organic modification that stabilizes the luminescence. This novel 'pickling' process not only augments the desired optoelectronic properties, but also is adaptable to further chemical modification for integration into chemical and biophysical sensors.

  14. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    PubMed

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  15. Process for strengthening silicon based ceramics

    DOEpatents

    Kim, Hyoun-Ee; Moorhead, A. J.

    1993-01-01

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  16. Process for strengthening silicon based ceramics

    DOEpatents

    Kim, Hyoun-Ee; Moorhead, A. J.

    1993-04-06

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  17. Monolithically-integrated Young interferometers for label-free and multiplexed detection of biomolecules

    NASA Astrophysics Data System (ADS)

    Savra, Eleftheria; Malainou, Antonia; Salapatas, Alexandros; Botsialas, Athanasios; Petrou, Panagiota; Raptis, Ioannis; Makarona, Eleni; Kakabakos, Sotirios E.; Misiakos, Konstantinos

    2016-03-01

    In this work, interferometric silicon chips with monolithically-integrated light-emitting devices coupled to co-integrated monomodal waveguides shaped as Young interferometers through mainstream silicon technology, are presented. Although the light sources are broad-band emitters, Young interferometry is possible through filtering. Chips with arrays of ten multiplexed interferometers have been employed for the label-free determination of pesticides in drinking water currently achieving detection limits in the ng/ml range.

  18. Nanocrystal Optoelectronic Devices in Plasmonic Nanojunctions

    NASA Astrophysics Data System (ADS)

    Evans, Kenneth Mellinger

    Optical trapping is an important tool for studying and manipulating nanoscale objects. Recent experiments have shown that subwavelength control of nanoparticles is possible by using patterned plasmonic nanostructures, rather than using a laser directly, to generate the electric fields necessary for particle trapping. In this thesis we present a theoretical model and experimental evidence for plasmonic optical trapping in nanoscale metal junctions. Further, we examine the use of the resultant devices as ultrasmall photodectors. Electromigrated nanojunctions, or "nanogaps", have a well-established plasmon resonance in the near-IR, leading to electric field enhancements large enough for single-molecule sensitivity in Surface-Enhance Raman (SERS) measurements. While molecule-based devices have been carefully studied, optically and electrically prob- ing individual quantum dots in nanoscale metal junctions remains relatively unex- plored. Plasmon-based optical trapping of quantum dots into prefabricated struc- tures could allow for inexpensive, scalable luminescent devices which are fully integrable into established silicon-based fabrication techniques. Additionally, these metal-nanocrystal-metal structures are ideal candidates to study optoelectronics in ultrasmall nanocrystals-based structures, as well as more exotic nanoscale phenom- ena such as blinking, plasmon-exciton interactions, and surface-enhanced fluorescence (SEF). We present experimental data supporting plasmon-based optical trapping in the nanogap geometry, and a corresponding numerical model of the electric field-generated forces in the nanogap geometry. Further, we give proof-of-concept measurements of photoconductance in the resultant quantum dot-based devices, as well as challenges and improvements moving forward.

  19. Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup1

    PubMed Central

    Ping Wang, Yan; Letoublon, Antoine; Nguyen Thanh, Tra; Bahri, Mounib; Largeau, Ludovic; Patriarche, Gilles; Cornet, Charles; Bertru, Nicolas; Le Corre, Alain; Durand, Olivier

    2015-01-01

    This study is carried out in the context of III–V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown on Si. GaP has been chosen as the interfacial layer, owing to its low lattice mismatch with Si. But, microtwins and antiphase boundaries are still difficult to avoid in this system. Absolute quantification of the microtwin volume fraction is used for optimization of the growth procedure in order to eliminate these defects. Lateral correlation lengths associated with mean antiphase boundary distances are then evaluated. Finally, optimized growth conditions lead to the annihilation of antiphase domains within the first 10 nm. PMID:26089763

  20. Optoelectronic monitoring of neural activity

    NASA Astrophysics Data System (ADS)

    Liu, Xiuli; Quan, Tingwei; Zhou, Wei

    2008-12-01

    Neural activity is a process of induction and propagation of neural excitability. Clarifying the mechanism of neural activity is one of the basic goals of modern brain science. The calcium ion, a second messenger in the brain, plays key roles in neuronal signaling pathways. To detect electrophysiology signals basing on membrane potential change of neurons and fluorescence signals basing on calcium dynamics and fluorescence labeling technique is critical for understanding neuronal signaling. In this research, a random access two-photon fluorescence microscope system basing on acousto-optic deflectors was used to monitor calcium fluorescence signals of neurons, combining a HEKA patch clamp to detect neuronal electrophysiology synchronously. Results showed that the optoelectronic method to monitor the firing of action potential at 50 Hz has single action potential resolution.

  1. Light emission from porous silicon

    NASA Astrophysics Data System (ADS)

    Penczek, John

    The continuous evolution of silicon microelectronics has produced significant gains in electronic information processing. However, greater improvements in performance are expected by utilizing optoelectronic techniques. But these techniques have been severely limited in silicon- based optoelectronics due to the lack of an efficient silicon light emitter. The recent observation of efficient light emission from porous silicon offer a promising opportunity to develop a suitable silicon light source that is compatible with silicon microelectronics. This dissertation examined the porous silicon emission mechanism via photoluminescence, and by a novel device structure for porous silicon emitters. The investigation first examined the correlation between porous silicon formation conditions (and subsequent morphology) with the resulting photoluminescence properties. The quantum confinement theory for porous silicon light emission contends that the morphology changes induced by the different formation conditions determine the optical properties of porous silicon. The photoluminescence spectral shifts measured in this study, in conjunction with TEM analysis and published morphological data, lend support to this theory. However, the photoluminescence spectral broadening was attributed to electronic wavefunction coupling between adjacent silicon nanocrystals. An novel device structure was also investigated in an effort to improve current injection into the porous silicon layer. The selective etching properties of porous silicon were used to create a p-i-n structure with crystalline silicon contacts to the porous silicon layer. The resulting device was found to have unique characteristics, with a negative differential resistance region and current-induced emission that spanned from 400 nm to 5500 nm. The negative differential resistance was correlated to resistive heating effects in the device. A numerical analysis of thermal emission spectra from silicon films, in addition to

  2. Encapsulated subwavelength grating as a quasi-monolithic resonant reflector.

    PubMed

    Brückner, Frank; Friedrich, Daniel; Britzger, Michael; Clausnitzer, Tina; Burmeister, Oliver; Kley, Ernst-Bernhard; Danzmann, Karsten; Tünnermann, Andreas; Schnabel, Roman

    2009-12-21

    For a variety of laser interferometric experiments, the thermal noise of high-reflectivity multilayer dielectric coatings limits the measurement sensitivity. Recently, monolithic high-reflection waveguide mirrors with nanostructured surfaces have been proposed to reduce the thermal noise in interferometric measurements. Drawbacks of this approach are a highly complicated fabrication process and the high susceptibility of the nanostructured surfaces to damage and pollution. Here, we propose and demonstrate a novel quasi-monolithic resonant surface reflector that also avoids the thick dielectric stack of conventional mirrors but has a flat and robust surface. Our reflector is an encapsulated subwavelength grating that is based on silicon. We measured a high reflectivity of 93% for a wavelength of lambda = 1.55 microm under normal incidence. Perfect reflectivities are possible in theory.

  3. Monolithic metal oxide transistors.

    PubMed

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics. PMID:25777338

  4. Monolithic afocal telescope

    NASA Technical Reports Server (NTRS)

    Roberts, William T. (Inventor)

    2010-01-01

    An afocal monolithic optical element formed of a shallow cylinder of optical material (glass, polymer, etc.) with fast aspheric surfaces, nominally confocal paraboloids, configured on the front and back surfaces. The front surface is substantially planar, and this lends itself to deposition of multi-layer stacks of thin dielectric and metal films to create a filter for rejecting out-of-band light. However, an aspheric section (for example, a paraboloid) can either be ground into a small area of this surface (for a Cassegrain-type telescope) or attached to the planar surface (for a Gregorian-type telescope). This aspheric section of the surface is then silvered to create the telescope's secondary mirror. The rear surface of the cylinder is figured into a steep, convex asphere (again, a paraboloid in the examples), and also made reflective to form the telescope's primary mirror. A small section of the rear surface (approximately the size of the secondary obscuration, depending on the required field of the telescope) is ground flat to provide an unpowered surface through which the collimated light beam can exit the optical element. This portion of the rear surface is made to transmit the light concentrated by the reflective surfaces, and can support the deposition of a spectral filter.

  5. Factorizing monolithic applications

    SciTech Connect

    Hall, J.H.; Ankeny, L.A.; Clancy, S.P.

    1998-12-31

    The Blanca project is part of the US Department of Energy`s (DOE) Accelerated Strategic Computing Initiative (ASCI), which focuses on Science-Based Stockpile Stewardship through the large-scale simulation of multi-physics, multi-dimensional problems. Blanca is the only Los Alamos National Laboratory (LANL)-based ASCI project that is written entirely in C++. Tecolote, a new framework used in developing Blanca physics codes, provides an infrastructure for gluing together any number of components; this framework is then used to create applications that encompass a wide variety of physics models, numerical solution options, and underlying data storage schemes. The advantage of this approach is that only the essential components for the given model need be activated at runtime. Tecolote has been designed for code re-use and to isolate the computer science mechanics from the physics aspects as much as possible -- allowing physics model developers to write algorithms in a style quite similar to the underlying physics equations that govern the computational physics. This paper describes the advantages of component architectures and contrasts the Tecolote framework with Microsoft`s OLE and Apple`s OpenDoc. An actual factorization of a traditional monolithic application into its basic components is also described.

  6. Special Issue: The Silicon Age

    NASA Astrophysics Data System (ADS)

    Kittler, Martin; Yang, Deren

    2006-03-01

    The present issue of physica status solidi (a) contains a collection of articles about different aspects of current silicon research and applications, ranging from basic investigations of mono- and polycrystalline silicon materials and nanostructures to technologies for device fabrication in silicon photovoltaics, micro- and optoelectronics. Guest Editors are Martin Kittler and Deren Yang, the organizers of a recent Sino-German symposium held in Cottbus, Germany, 19-24 September 2005.The cover picture shows four examples of The Silicon Age: the structure of a thin film solar cell on low-cost SSP (silicon sheet from powder) substrate (upper left image) [1], a high-resolution transmission electron microscopy image and diffraction pattern of a single-crystalline Si nanowire (upper right) [2], a carrier lifetime map from an n-type multicrystalline silicon wafer after gettering by a grain boundary (lower left) [3], and a scanning acoustic microscopy image of a bonded 150 mm diameter wafer pair (upper right) [4].

  7. Monolithical aspherical beam expanding systems

    NASA Astrophysics Data System (ADS)

    Fuchs, U.; Matthias, Sabrina

    2014-10-01

    Beam expanding is a common task, where Galileo telescopes are preferred. However researches and customers have found limitations when using these systems. A new monolithical solution which is based on the usage of only one aspherical component will be presented. It will be shown how to combine up to five monolithical beam expanding systems and to keep the beam quality at diffraction limitation. Insights will be given how aspherical beam expanding systems will help using larger incoming beams and reducing the overall length of such a system. Additionally an add-on element for divergence and wavelength adaption will be presented.

  8. Method of monolithic module assembly

    DOEpatents

    Gee, James M.; Garrett, Stephen E.; Morgan, William P.; Worobey, Walter

    1999-01-01

    Methods for "monolithic module assembly" which translate many of the advantages of monolithic module construction of thin-film PV modules to wafered c-Si PV modules. Methods employ using back-contact solar cells positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The methods of the invention allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  9. Optoelectronic neural networks and learning machines

    SciTech Connect

    Farhat, N.H

    1989-09-01

    Optics offers advantages in realizing the parallelism, massive interconnectivity, and plasticity required in the design and construction of large-scale optoelectronic (photonic) neurocomputers that solve optimization problems at potentially very high speeds by learning to perform mappings and associations. To elucidate these advantages, a brief neural net primer based on phase-space and energy landscape considerations is presented. This provides the basis for subsequent discussion of optoelectronic architectures and implementations with self-organization and learning ability that are configured around an optical crossbar interconnect. Stochastic learning in the context of a Boltzmann machine is then described to illustrate the flexibility of optoelectronics in performing tasks that may be difficult for electronics alone. Stochastic nets are studies to gain insight into the possible role of noise in biological neural nets. The authors describe two approaches to realizing large-scale optoelectronic neurocomputers.

  10. Opto-Electronic Oscillator and its Applications

    NASA Technical Reports Server (NTRS)

    Yao, X. S.; Maleki, L.

    1996-01-01

    We present the theoretical and experimental results of a new class of microwave oscillators called opto-electronic oscillators (OEO). We discuss techniques of achieving high stability single mode operation and demonstrate the applications of OEO in photonic communication systems.

  11. Transparent heat-spreader for optoelectronic applications

    DOEpatents

    Minano, Juan Carlos; Benitez, Pablo

    2014-11-04

    An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

  12. Radiation effects in optoelectronic devices. [Review

    SciTech Connect

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given.

  13. Porous silicon carbide (SIC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  14. Monolithic CMOS imaging x-ray spectrometers

    NASA Astrophysics Data System (ADS)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  15. Monolithic fiber optic sensor assembly

    SciTech Connect

    Sanders, Scott

    2015-02-10

    A remote sensor element for spectrographic measurements employs a monolithic assembly of one or two fiber optics to two optical elements separated by a supporting structure to allow the flow of gases or particulates therebetween. In a preferred embodiment, the sensor element components are fused ceramic to resist high temperatures and failure from large temperature changes.

  16. Optoelectronic microdevices for combined phototherapy

    NASA Astrophysics Data System (ADS)

    Zharov, Vladimir P.; Menyaev, Yulian A.; Hamaev, V. A.; Antropov, G. M.; Waner, Milton

    2000-03-01

    In photomedicine in some of cases radiation delivery to local zones through optical fibers can be changed for the direct placing of tiny optical sources like semiconductor microlasers or light diodes in required zones of ears, nostrils, larynx, nasopharynx cochlea or alimentary tract. Our study accentuates the creation of optoelectronic microdevices for local phototherapy and functional imaging by using reflected light. Phototherapeutic micromodule consist of the light source, microprocessor and miniature optics with different kind of power supply: from autonomous with built-in batteries to remote supply by using pulsed magnetic field and supersmall coils. The developed prototype photomodule has size (phi) 8X16 mm and work duration with built-in battery and light diode up several hours at the average power from several tenths of mW to few mW. Preliminary clinical tests developed physiotherapeutic micrimodules in stomatology for treating the inflammation and in otolaryngology for treating tonsillitis and otitis are presented. The developed implanted electro- optical sources with typical size (phi) 4X0,8 mm and with remote supply were used for optical stimulation of photosensitive retina structure and electrostimulation of visual nerve. In this scheme the superminiature coil with 30 electrical integrated levels was used. Such devices were implanted in eyes of 175 patients with different vision problems during clinical trials in Institute of Eye's Surgery in Moscow. For functional imaging of skin layered structure LED arrays coupled photodiodes arrays were developed. The possibilities of this device for study drug diffusion and visualization small veins are discussed.

  17. Protective Skins for Aerogel Monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas; Johnston, James C.; Kuczmarski, Maria A.; Meador, Ann B.

    2007-01-01

    A method of imparting relatively hard protective outer skins to aerogel monoliths has been developed. Even more than aerogel beads, aerogel monoliths are attractive as thermal-insulation materials, but the commercial utilization of aerogel monoliths in thermal-insulation panels has been inhibited by their fragility and the consequent difficulty of handling them. Therefore, there is a need to afford sufficient protection to aerogel monoliths to facilitate handling, without compromising the attractive bulk properties (low density, high porosity, low thermal conductivity, high surface area, and low permittivity) of aerogel materials. The present method was devised to satisfy this need. The essence of the present method is to coat an aerogel monolith with an outer polymeric skin, by painting or spraying. Apparently, the reason spraying and painting were not attempted until now is that it is well known in the aerogel industry that aerogels collapse in contact with liquids. In the present method, one prevents such collapse through the proper choice of coating liquid and process conditions: In particular, one uses a viscous polymer precursor liquid and (a) carefully controls the amount of liquid applied and/or (b) causes the liquid to become cured to the desired hard polymeric layer rapidly enough that there is not sufficient time for the liquid to percolate into the aerogel bulk. The method has been demonstrated by use of isocyanates, which, upon exposure to atmospheric moisture, become cured to polyurethane/polyurea-type coats. The method has also been demonstrated by use of commercial epoxy resins. The method could also be implemented by use of a variety of other resins, including polyimide precursors (for forming high-temperature-resistant protective skins) or perfluorinated monomers (for forming coats that impart hydrophobicity and some increase in strength).

  18. A Self-Synchronized Optoelectronic Oscillator based on an RTD Photo-Detector and a Laser Diode.

    PubMed

    Romeira, Bruno; Seunarine, Kris; Ironside, Charles N; Kelly, Anthony E; Figueiredo, José M L

    2011-08-15

    We propose and demonstrate a simple and stable low-phase noise optoelectronic oscillator (OEO) that uses a laser diode, an optical fiber delay line and a resonant tunneling diode (RTD) free-running oscillator that is monolithic integrated with a waveguide photo-detector. The RTD-OEO exhibits single-side band phase noise power below -100 dBc/Hz with more than 30 dB noise suppression at 10 kHz from the center free-running frequency for fiber loop lengths around 1.2 km. The oscillator power consumption is below 0.55 W, and can be controlled either by the injected optical power or the fiber delay line. The RTD-OEO stability is achieved without using other high-speed optical/optoelectronic components and amplification. PMID:23814452

  19. Polymer light harvesting composites for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sun, Sam-Shajing; Wang, Dan

    2015-09-01

    Polymer based optoelectronic composites and thin film devices exhibit great potential in space applications due to their lightweight, flexible shape, high photon absorption coefficients, and robust radiation tolerance in space environment. Polymer/dye composites appear promising for optoelectronics applications due to potential enhancements in both light harvesting and charge separation. In this study, the optoelectronic properties of a series of molecular dyes paired with a conjugated polymer Poly(3-hexylthiophene-2,5-diyl) (P3HT) were investigated. Specifically, the solution PL quenching coefficients (Ksv) of dye/polymer follows a descending order from dyes of Chloro(protoporphyrinato)iron(III) (Hemin), Protoporphyrin, to meso-Tetra(4-carboxyphenyl)porphine (TCPP). In optoelectronic devices made of the P3HT/dye/PCBM composites, the short circuit current densities Jsc as well as the overall power conversion efficiencies (PCE) also follow a descending order from Hemin, Protoporphyrin, to TCPP, despite Hemin exhibits the intermediate polymer/dye LUMO (lowest unoccupied molecular orbital) offset and lowest absorption coefficient as compared to the other two dyes, i.e., the cell optoelectronic efficiency did not follow the LUMO offsets which are the key driving forces for the photo induced charge separations. This study reveals that too large LUMO offset or electron transfer driving force may result in smaller PL quenching and optoelectronic conversion efficiency, this could be another experimental evidence for the Marcus electron transfer model, particularly for the Marcus `inverted region'. It appears an optimum electron transfer driving force or strong PL quenching appears more critical than absorption coefficient for optoelectronic conversion devices.

  20. Porous silicon bulk acoustic wave resonator with integrated transducer

    PubMed Central

    2012-01-01

    We report that porous silicon acoustic Bragg reflectors and AlN-based transducers can be successfully combined and processed in a commercial solidly mounted resonator production line. The resulting device takes advantage of the unique acoustic properties of porous silicon in order to form a monolithically integrated bulk acoustic wave resonator. PMID:22776697

  1. Monolithic active pixel radiation detector with shielding techniques

    DOEpatents

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  2. Fracture Toughness in Advanced Monolithic Ceramics - SEPB Versus SEVENB Methods

    NASA Technical Reports Server (NTRS)

    Choi, S. R.; Gyekenyesi, J. P.

    2005-01-01

    Fracture toughness of a total of 13 advanced monolithic ceramics including silicon nitrides, silicon carbide, aluminas, and glass ceramic was determined at ambient temperature by using both single edge precracked beam (SEPB) and single edge v-notched beam (SEVNB) methods. Relatively good agreement in fracture toughness between the two methods was observed for advanced ceramics with flat R-curves; whereas, poor agreement in fracture toughness was seen for materials with rising R-curves. The discrepancy in fracture toughness between the two methods was due to stable crack growth with crack closure forces acting in the wake region of cracks even in SEVNB test specimens. The effect of discrepancy in fracture toughness was analyzed in terms of microstructural feature (grain size and shape), toughening exponent, and stable crack growth determined using back-face strain gaging.

  3. Optoelectronics research in the former Soviet Union

    NASA Astrophysics Data System (ADS)

    Casey, H. C., Jr.; Bishop, S. G.; Eichen, E.; Kazarinov, R. F.; Taylor, H. F.

    1992-05-01

    Optoelectronics research in the former Soviet Union has been examined in the areas of eptitaxial layer growth and device processing, photonic devices such as semiconductor laser and photodetectors, high-speed lasers, the integration of photonic devices and transistors for optoelectronic integrated circuits (OEIC's), optical amplifiers, optoelectronic switching, and optical communications. These devices are largely prepared with 3-5 compound semiconductors. The assessment by a panel of US experts is based on a review of the translated Soviet technical literature, supplemented by information from recent visits to the former Soviet Union. The majority of Soviet optoelectronic devices were fabricated on wafers prepared by liquid-phase epitaxy. The strongest area of Soviet optoelectronic device research has been semiconductor lasers. No reports of ER(3+)-doped fiber amplifiers were found in the Soviet literature. However, Er(3+)-doped fiber fabrication is extremely simple, and, given its traditional strengths in the area of glass fabrication, the former Soviet Union should have the capability to fabricate Er(3+)-doped optical-fiber amplifiers. The current turmoil in the former Soviet Union makes predictions of the future difficult. It is likely that researchers will be driven to develop funding ties with foreign entities, and they also will become better integrated into the world research community by publishing in foreign (mainly US) journals.

  4. Nanomaterials for Electronics and Optoelectronics

    NASA Technical Reports Server (NTRS)

    Koehne, Jessica E.; Meyyappan, M.

    2011-01-01

    Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

  5. Nanoklystron: A Monolithic Tube Approach to THz Power Generation

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Fung, Andy; Manohara, Harish; Xu, Jimmy; Chang, Baohe

    2001-01-01

    The authors propose a new approach to THz power generation: the nanoklystron. Utilizing silicon micromachining techniques, the design and fabrication concept of a monolithic THz vacuum-tube reflex-klystron source is described. The nanoklystron employs a separately fabricated cathode structure composed of densely packed carbon nanotube field emitters and an add-in repeller. The nanotube cathode is expected to increase the current density, extend the cathode life and decrease the required oscillation voltage to values below 100 V. The excitation cavity is based on ridged-waveguide and differs from the conventional cylindrical re-entrant structures found in lower frequency klystrons. A quasi-static field analysis of the cavity and output coupling structure show excellent control of the quality factor and desired field distribution. Output power is expected to occur through an iris coupled matched rectangular waveguide and integrated pyramidal feed horn. The entire circuit is designed so as to be formed monolithically from two thermocompression bonded silicon wafers processed using deep reactive ion etching (DRIE) techniques. To expedite prototyping, a 600 GHz mechanically machined structure has been designed and is in fabrication. A complete numeric analysis of the nanoklystron circuit, including the electron beam dynamics has just gotten underway. Separate evaluation of the nanotube cathodes is also ongoing. The authors will describe the progress to date as well as plans for the immediate implementation and testing of nanoklystron prototypes at 640 and 1250 GHz.

  6. Proton Conduction in Sulfonated Organic-Inorganic Hybrid Monoliths with Hierarchical Pore Structure.

    PubMed

    von der Lehr, Martin; Seidler, Christopher F; Taffa, Dereje H; Wark, Michael; Smarsly, Bernd M; Marschall, Roland

    2016-09-28

    Porous organic-inorganic hybrid monoliths with hierarchical porosity exhibiting macro- and mesopores are prepared via sol-gel process under variation of the mesopore size. Organic moieties in the pore walls are incorporated by substituting up to 10% of the silicon precursor tetramethylorthosilicate with bisilylated benzene molecules. After functionalization with sulfonic acid groups, the resulting sulfonated hybrid monoliths featuring a bimodal pore structure are investigated regarding proton conduction depending on temperature and relative humidity. The hierarchical pore system and controlled mesopore design turn out to be crucial for sulfonation and proton conduction. These sulfonated hybrid hierarchical monoliths containing only 10% organic precursor exhibit higher proton conduction at different relative humidities than sulfonated periodic mesoporous organosilica made of 100% bisilylated precursors exhibiting solely mesopores, even with a lower concentration of sulfonic acid groups. PMID:27598017

  7. Proton Conduction in Sulfonated Organic-Inorganic Hybrid Monoliths with Hierarchical Pore Structure.

    PubMed

    von der Lehr, Martin; Seidler, Christopher F; Taffa, Dereje H; Wark, Michael; Smarsly, Bernd M; Marschall, Roland

    2016-09-28

    Porous organic-inorganic hybrid monoliths with hierarchical porosity exhibiting macro- and mesopores are prepared via sol-gel process under variation of the mesopore size. Organic moieties in the pore walls are incorporated by substituting up to 10% of the silicon precursor tetramethylorthosilicate with bisilylated benzene molecules. After functionalization with sulfonic acid groups, the resulting sulfonated hybrid monoliths featuring a bimodal pore structure are investigated regarding proton conduction depending on temperature and relative humidity. The hierarchical pore system and controlled mesopore design turn out to be crucial for sulfonation and proton conduction. These sulfonated hybrid hierarchical monoliths containing only 10% organic precursor exhibit higher proton conduction at different relative humidities than sulfonated periodic mesoporous organosilica made of 100% bisilylated precursors exhibiting solely mesopores, even with a lower concentration of sulfonic acid groups.

  8. 3D monolithically stacked CMOS Active Pixel Sensors for particle position and direction measurements

    NASA Astrophysics Data System (ADS)

    Servoli, L.; Passeri, D.; Morozzi, A.; Magalotti, D.; Piperku, L.

    2015-01-01

    In this work we propose a 3D monolithically stacked, multi-layer detectors based on CMOS Active Pixel Sensors (APS) layers which allows at the same time accurate estimation of the impact point and of the incidence angle an ionizing particle. The whole system features two fully-functional CMOS APS matrix detectors, including both sensing area and control/signal elaboration circuitry, stacked in a monolithic device by means of Through Silicon Via (TSV) connections thanks to the capabilities of the CMOS vertical scale integration (3D-IC) 130 nm Chartered/Tezzaron technology. In order to evaluate the suitability of the two layer monolithic active pixel sensor system to reconstruct particle tracks, tests with proton beams have been carried out at the INFN LABEC laboratories in Florence (Italy) with 3 MeV proton beam.

  9. Bio-inspired networks for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Han, Bing; Huang, Yuanlin; Li, Ruopeng; Peng, Qiang; Luo, Junyi; Pei, Ke; Herczynski, Andrzej; Kempa, Krzysztof; Ren, Zhifeng; Gao, Jinwei

    2014-11-01

    Modern optoelectronics needs development of new materials characterized not only by high optical transparency and electrical conductivity, but also by mechanical strength, and flexibility. Recent advances employ grids of metallic micro- and nanowires, but the overall performance of the resulting material composites remains unsatisfactory. In this work, we propose a new strategy: application of natural scaffoldings perfected by evolution. In this context, we study two bio-inspired networks for two specific optoelectronic applications. The first network, intended for solar cells, light sources and similar devices, has a quasi-fractal structure and is derived directly from a chemically extracted leaf venation system. The second network is intended for touch screens and flexible displays, and is obtained by metalizing a spider’s silk web. We demonstrate that each of these networks attain an exceptional optoelectonic and mechanical performance for its intended purpose, providing a promising direction in the development of more efficient optoelectronic devices.

  10. Bio-inspired networks for optoelectronic applications.

    PubMed

    Han, Bing; Huang, Yuanlin; Li, Ruopeng; Peng, Qiang; Luo, Junyi; Pei, Ke; Herczynski, Andrzej; Kempa, Krzysztof; Ren, Zhifeng; Gao, Jinwei

    2014-01-01

    Modern optoelectronics needs development of new materials characterized not only by high optical transparency and electrical conductivity, but also by mechanical strength, and flexibility. Recent advances employ grids of metallic micro- and nanowires, but the overall performance of the resulting material composites remains unsatisfactory. In this work, we propose a new strategy: application of natural scaffoldings perfected by evolution. In this context, we study two bio-inspired networks for two specific optoelectronic applications. The first network, intended for solar cells, light sources and similar devices, has a quasi-fractal structure and is derived directly from a chemically extracted leaf venation system. The second network is intended for touch screens and flexible displays, and is obtained by metalizing a spider's silk web. We demonstrate that each of these networks attain an exceptional optoelectonic and mechanical performance for its intended purpose, providing a promising direction in the development of more efficient optoelectronic devices.

  11. Laser processing of components for polymer mircofluidic and optoelectronic products

    NASA Astrophysics Data System (ADS)

    Gillner, Arnold; Bremus-Koebberling, Elke A.; Wehner, Martin; Russek, Ulrich A.; Berden, Thomas

    2001-06-01

    Miniaturization is one of the keywords for the production of customer oriented and highly integrated consumer products like mobile phones, portables and other products from the daily life and there are some first silicon made products like pressure sensors, acceleration sensors and micro fluidic components, which are built in automobiles, washing machines and medical products. However, not all applications can be covered with this material, because of the limitations in lateral and 3-dimensional structuring, the mechanical behavior, the functionality and the costs of silicon. Therefore other materials, like polymers have been selected as suitable candidates for cost effective mass products. This holds especially for medical and optical applications, where the properties of selected polymers, like biocompatibility, inert chemical behavior and high transparency can be used. For this material laser micro processing offers appropriate solutions for structuring as well as for packaging with high flexibility, material variety, structure size, processing speed and easy integration into existing fabrication plants. The paper presents recent results and industrial applications of laser micro processing for polymer micro fluidic devices, like micro analysis systems, micro reactors and medical micro implants, where excimer radiation is used for lateral structuring and diode lasers have used for joining and packaging. Similar technologies have been applied to polymer waveguides to produce passive optoelectronic components for high speed interconnection with surface roughness less than 20 nm and low attenuation. The paper also reviews the technical and economical limitations and the potential of the technology for other micro products.

  12. Monolithic-integrated microlaser encoder.

    PubMed

    Sawada, R; Higurashi, E; Ito, T; Ohguchi, O; Tsubamoto, M

    1999-11-20

    We have developed an extremely small integrated microencoder whose sides are less than 1 mm long. It is 1/100 the size of conventional encoders. This microencoder consists of a laser diode, monolithic photodiodes, and fluorinated polyimide waveguides with total internal reflection mirrors. The instrument can measure the relative displacement between a grating scale and the encoder with a resolution of the order of 0.01 microm; it can also determine the direction in which the scale is moving. By using the two beams that were emitted from the two etched mirrors of the laser diode, by monolithic integration of the waveguide and photodiodes, and by fabrication of a step at the edge of the waveguide, we were able to eliminate conventional bulky optical components such as the beam splitter, the quarter-wavelength plate, bulky mirrors, and bulky photodetectors. PMID:18324228

  13. Unusual Optoelectronic Properties of Hydrogenated Bilayer Silicene: From Solar Absorber to Light-emitting Diode Applications

    NASA Astrophysics Data System (ADS)

    Huang, Bing; Deng, Hui-Xiong; Lee, Hoonkyung; Park, Changwon; Yoon, Mina; Sumpter, Bobby; Liu, Feng; Smith, Sean; Wei, Su-Huai

    2014-03-01

    Silicon is arguably the greatest electronic material, but not so good an optoelectronic material. By employing first-principles calculations and cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as new optoelectronic materials. Most significantly, hydrogenation will covert the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double-side hydrogenated BS are characterized with dipole-allowed direct (or quasidirect) band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-side hydrogenated BS structures exhibit direct (or quasidirect) band gaps in the range of red, green, and blue colors, respectively, affording white light emitting diodes. Our findings open a door to the search of new silicon-based light-absorption and light-emitting materials for earth-abundant high-efficiency optoelectronic applications. This research is sponsored by the Materials Sciences and Engineering Division, Office of Basic Energy Sciences, U.S. Department of Energy.

  14. High throughput optoelectronic smart pixel systems using diffractive optics

    NASA Astrophysics Data System (ADS)

    Chen, Chih-Hao

    1999-12-01

    Recent developments in digital video, multimedia technology and data networks have greatly increased the demand for high bandwidth communication channels and high throughput data processing. Electronics is particularly suited for switching, amplification and logic functions, while optics is more suitable for interconnections and communications with lower energy and crosstalk. In this research, we present the design, testing, integration and demonstration of several optoelectronic smart pixel devices and system architectures. These systems integrate electronic switching/processing capability with parallel optical interconnections to provide high throughput network communication and pipeline data processing. The Smart Pixel Array Cellular Logic processor (SPARCL) is designed in 0.8 m m CMOS and hybrid integrated with Multiple-Quantum-Well (MQW) devices for pipeline image processing. The Smart Pixel Network Interface (SAPIENT) is designed in 0.6 m m GaAs and monolithically integrated with LEDs to implement a highly parallel optical interconnection network. The Translucent Smart Pixel Array (TRANSPAR) design is implemented in two different versions. The first version, TRANSPAR-MQW, is designed in 0.5 m m CMOS and flip-chip integrated with MQW devices to provide 2-D pipeline processing and translucent networking using the Carrier- Sense-MultipleAccess/Collision-Detection (CSMA/CD) protocol. The other version, TRANSPAR-VM, is designed in 1.2 m m CMOS and discretely integrated with VCSEL-MSM (Vertical-Cavity-Surface- Emitting-Laser and Metal-Semiconductor-Metal detectors) chips and driver/receiver chips on a printed circuit board. The TRANSPAR-VM provides an option of using the token ring network protocol in addition to the embedded functions of TRANSPAR-MQW. These optoelectronic smart pixel systems also require micro-optics devices to provide high resolution, high quality optical interconnections and external source arrays. In this research, we describe an innovative

  15. Monolithic pattern-sensitive detector

    DOEpatents

    Berger, Kurt W.

    2000-01-01

    Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

  16. Light Weight Silicon Mirrors for Space Instrumentation

    NASA Technical Reports Server (NTRS)

    Bly, Vincent T.; Hill, Peter C.; Hagopian, John G.; Strojay, Carl R.; Miller, Timothy

    2012-01-01

    Each mirror is a monolithic structure from a single crystal of silicon. The mirrors are light weighted after the optical surface is ground and polished. Mirrors made during the initial phase of this work were typically 1/50 lambda or better (RMS at 633 n m)

  17. Optoelectronic semiconductor device and method of fabrication

    DOEpatents

    Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

    2014-11-25

    An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

  18. Opto-electronic oscillators having optical resonators

    NASA Technical Reports Server (NTRS)

    Yao, Xiaotian Steve (Inventor); Maleki, Lutfollah (Inventor); Ilchenko, Vladimir (Inventor)

    2003-01-01

    Systems and techniques of incorporating an optical resonator in an optical part of a feedback loop in opto-electronic oscillators. This optical resonator provides a sufficiently long energy storage time and hence to produce an oscillation of a narrow linewidth and low phase noise. Certain mode matching conditions are required. For example, the mode spacing of the optical resonator is equal to one mode spacing, or a multiplicity of the mode spacing, of an opto-electronic feedback loop that receives a modulated optical signal and to produce an electrical oscillating signal.

  19. Characterization of polyacrylamide based monolithic columns.

    PubMed

    Plieva, Fatima M; Andersson, Jonatan; Galaev, Igor Yu; Mattiasson, Bo

    2004-07-01

    Supermacroporous monolithic polyacrylamide (pAAm)-based columns have been prepared by radical cryo-copolymerization (copolymerization in the moderately frozen system) of acrylamide with functional co-monomer, allyl glycidyl ether (AGE), and cross-linker N,N'-methylene-bis-acrylamide (MBAAm) directly in glass columns (ID 10 mm). The monolithic columns have uniform supermacroporous sponge-like structure with interconnected supermacropores of pore size 5-100 microm. The monoliths can be dried and stored in the dry state. High mechanical stability of the monoliths allowed sterilization by autoclaving. Column-to-column reproducibility of pAAm-monoliths was demonstrated on 5 monolithic columns from different batches prepared under the same cryostructuration conditions.

  20. Characterization of polyacrylamide based monolithic columns.

    PubMed

    Plieva, Fatima M; Andersson, Jonatan; Galaev, Igor Yu; Mattiasson, Bo

    2004-07-01

    Supermacroporous monolithic polyacrylamide (pAAm)-based columns have been prepared by radical cryo-copolymerization (copolymerization in the moderately frozen system) of acrylamide with functional co-monomer, allyl glycidyl ether (AGE), and cross-linker N,N'-methylene-bis-acrylamide (MBAAm) directly in glass columns (ID 10 mm). The monolithic columns have uniform supermacroporous sponge-like structure with interconnected supermacropores of pore size 5-100 microm. The monoliths can be dried and stored in the dry state. High mechanical stability of the monoliths allowed sterilization by autoclaving. Column-to-column reproducibility of pAAm-monoliths was demonstrated on 5 monolithic columns from different batches prepared under the same cryostructuration conditions. PMID:15354560

  1. Massively parallel low-cost pick-and-place of optoelectronic devices by electrochemical fluidic processing.

    PubMed

    Ozkan, M; Kibar, O; Ozkan, C S; Esener, S C

    2000-09-01

    We describe a novel electrochemical technique for the nonlithographic, fluidic pick-and-place assembly of optoelectronic devices by electrical and optical addressing. An electrochemical cell was developed that consists of indium tin oxide (ITO) and n -type silicon substrates as the two electrode materials and deionized water (R = 18 MOmega) as the electrolytic medium between the two electrodes. 0.8-20-microm-diameter negatively charged polystyrene beads, 50-100-microm-diameter SiO(2) pucks, and 50-microm LED's were successfully integrated upon a patterned silicon substrate by electrical addressing. In addition, 0.8-microm-diameter beads were integrated upon a homogeneous silicon substrate by optical addressing. This method can be applied to massively parallel assembly (>1000 x 1000 arrays) of multiple types of devices (of a wide size range) with very fast (a few seconds) and accurate positioning.

  2. Counterflow isotachophoresis in a monolithic column.

    PubMed

    Liu, Bingwen; Cong, Yongzheng; Ivory, Cornelius F

    2014-09-01

    This study describes stationary counterflow isotachophoresis (ITP) in a poly(acrylamide-co-N,N'-methylenebisacrylamide) monolithic column as a means for improving ITP processing capacity and reducing dispersion. The flow profile in the monolith was predicted using COMSOL's Brinkman Equation application mode, which revealed that the flow profile was mainly determined by monolith permeability. As monolith permeability decreases, the flow profile changes from a parabolic shape to a plug shape. An experimental monolithic column was prepared in a fused-silica capillary using an ultraviolet-initiated polymerization method. A monolithic column made from 8% (wt.) monomer was chosen for the stationary counterflow ITP experiments. Counterflow ITP in the monolithic column showed undistorted analyte zones with significantly reduced dispersion compared to the severe dispersion observed in an open capillary. Particularly, for r-phycoerythrin focused by counterflow ITP, its zone width in the monolithic column was only one-third that observed in an open capillary. These experiments demonstrate that stationary counterflow ITP in monoliths can be a robust and practical electrofocusing method.

  3. Using optoelectronic sensors in the system PROTEUS

    NASA Astrophysics Data System (ADS)

    Zyczkowski, M.; Szustakowski, M.; Ciurapinski, W.; Piszczek, M.

    2010-10-01

    The paper presents the concept of optoelectronic devices for human protection in rescue activity. The system consists of an ground robots with predicted sensor. The multisensor construction of the system ensures significant improvement of security of using on-situ like chemical or explosive sensors. The article show a various scenario of use for individual sensor in system PROTEUS.

  4. Trends in optoelectronic perimeter security sensors

    NASA Astrophysics Data System (ADS)

    Szustakowski, Mieczyslaw; Ciurapinski, Wiesław M.; Zyczkowski, Marek

    2007-10-01

    New trends in development of optoelectronic and radar systems with mixed technologies for detection, identification and visualization for critical infrastructure protection are presented. Network-based communication as well as new algorithms of intelligent vision surveillance and image fusion is described.

  5. Efficient Optoelectronics Teaching in Undergraduate Engineering Curriculum

    ERIC Educational Resources Information Center

    Matin, M. A.

    2005-01-01

    The Engineering Department's vision for undergraduate education for the next century is to develop a set of laboratory experiences that are thoughtfully sequenced and integrated to promote the full development of students in all courses. Optoelectronics is one of the most important and most demanding courses in Electrical and Computer Engineering.…

  6. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott; Lewis, Larry Neil; Cella, James Anthony; Shiang, Joseph John

    2011-11-01

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  7. Polymer optoelectronic structures for retinal prosthesis.

    PubMed

    Gautam, Vini; Narayan, K S

    2014-01-01

    This commentary highlights the effectiveness of optoelectronic properties of polymer semiconductors based on recent results emerging from our laboratory, where these materials are explored as artificial receptors for interfacing with the visual systems. Organic semiconductors based polymer layers in contact with physiological media exhibit interesting photophysical features, which mimic certain natural photoreceptors, including those in the retina. The availability of such optoelectronic materials opens up a gateway to utilize these structures as neuronal interfaces for stimulating retinal ganglion cells. In a recently reported work entitled "A polymer optoelectronic interface provides visual cues to a blind retina," we utilized a specific configuration of a polymer semiconductor device structure to elicit neuronal activity in a blind retina upon photoexcitation. The elicited neuronal signals were found to have several features that followed the optoelectronic response of the polymer film. More importantly, the polymer-induced retinal response resembled the natural response of the retina to photoexcitation. These observations open up a promising material alternative for artificial retina applications.

  8. Ferroelectric/Optoelectronic Memory/Processor

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita; Thakoor, Anilkumar P.

    1992-01-01

    Proposed hybrid optoelectronic nonvolatile analog memory and data processor comprises planar array of microscopic photosensitive ferroelectric capacitors performing massively parallel analog computations. Processors overcome electronic crosstalk and limitations on number of input/output contacts inherent in electronic implementations of large interconnection arrays. Used in general optical computing, recognition of patterns, and artificial neural networks.

  9. Optoelectronic Inner-Product Neural Associative Memory

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang

    1993-01-01

    Optoelectronic apparatus acts as artificial neural network performing associative recall of binary images. Recall process is iterative one involving optical computation of inner products between binary input vector and one or more reference binary vectors in memory. Inner-product method requires far less memory space than matrix-vector method.

  10. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    SciTech Connect

    Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

    2015-03-24

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

  11. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    DOE PAGES

    Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

    2015-03-24

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

  12. Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer

    NASA Astrophysics Data System (ADS)

    Tsuchiyama, Kazuaki; Yamane, Keisuke; Utsunomiya, Shu; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-10-01

    In this report, we present a monolithic integration method for a Si-MOSFET and a GaN-LED onto a Si/SiO2/GaN-LED wafer as an elemental technology for monolithic optoelectronic integrated circuits. To enable a Si-MOSFET device process, we investigated the thermal tolerance of a thin top-Si and GaN-LED layer on a Si/SiO2/GaN-LED wafer. The high thermal tolerance of the Si/SiO2/GaN-LED structure allowed for the monolithic integration of a Si n-MOSFET and a GaN-µLED without degrading the performance of either device. A GaN-µLED driver circuit was fabricated using a Si n-MOSFET and a µLED of 30 × 30 µm2, with the modulation bandwidth of the circuit estimated to be over 10 MHz.

  13. Compact monolithic capacitive discharge unit

    DOEpatents

    Roesler, Alexander W.; Vernon, George E.; Hoke, Darren A.; De Marquis, Virginia K.; Harris, Steven M.

    2007-06-26

    A compact monolithic capacitive discharge unit (CDU) is disclosed in which a thyristor switch and a flyback charging circuit are both sandwiched about a ceramic energy storage capacitor. The result is a compact rugged assembly which provides a low-inductance current discharge path. The flyback charging circuit preferably includes a low-temperature co-fired ceramic transformer. The CDU can further include one or more ceramic substrates for enclosing the thyristor switch and for holding various passive components used in the flyback charging circuit. A load such as a detonator can also be attached directly to the CDU.

  14. Improved monolithic tandem solar cell

    SciTech Connect

    Wanlass, M.W.

    1991-04-23

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surf ace of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched.

  15. Nanosecond monolithic CMOS readout cell

    DOEpatents

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  16. Monolithic 20-GHz Transmitting Module

    NASA Technical Reports Server (NTRS)

    Kascak, T.; Kaelin, G.; Gupta, A.

    1986-01-01

    20-GHz monolithic microwave/millimeter-wave integrated circuit (MMIC) with amplification and phase-shift (time-delay) capabilities developed. Use of MMIC module technology promises to make feasible development of weight- and cost-effective phased-array antenna systems, identified as major factor in achieving minimum cost and efficient use of frequency and orbital resources of future generations of communication satellite systems. Use of MMIC transmitting modules provides for relatively simple method for phase-shift control of many separate radio-frequency (RF) signals required for phased-array antenna systems.

  17. Monolithically integrated absolute frequency comb laser system

    DOEpatents

    Wanke, Michael C.

    2016-07-12

    Rather than down-convert optical frequencies, a QCL laser system directly generates a THz frequency comb in a compact monolithically integrated chip that can be locked to an absolute frequency without the need of a frequency-comb synthesizer. The monolithic, absolute frequency comb can provide a THz frequency reference and tool for high-resolution broad band spectroscopy.

  18. Adsorption over polyacrylonitrile based carbon monoliths

    NASA Astrophysics Data System (ADS)

    Nandi, Mahasweta; Dutta, Arghya; Patra, Astam Kumar; Bhaumik, Asim; Uyama, Hiroshi

    2013-02-01

    Highly porous activated carbon monoliths have been prepared from mesoporous polyacrylonitrile (PAN) monolith as the carbon precursor. The mesoporous PAN monoliths are fabricated by a unique and facile template-free method which on carbonization gives N-doped activated carbon monoliths. The carbonization is achieved via two step thermal process which includes pretreatment in air leading to cyclization and subsequent aromatization of the PAN moieties followed by carbonization in a mixture of argon and carbon dioxide to give a layered carbon framework. Nitrogen sorption experiments carried over these carbon monoliths revealed high surface area (ca. 2500 m2g-1) for these materials with precise micropore size distribution. The activated carbons show extraordinarily high CO2 capture capacity and the uptake up to 3 bar has been found to be as high as 22.5 and 10.6 mmol/g at 273 K and 298 K, respectively.

  19. Semiconductor quantum dot intermixing for monolithic photonic integration

    NASA Astrophysics Data System (ADS)

    Wang, Yang

    -preserved material quality after intermixing process. The monolithic extended cavity QDash lasers on InP substrate have also been successfully fabricated using N-IID and a propagation loss of 9.2 cm-1 has been measured in the passive section. The results indicate a highly attractive wavelength trimming and selective bandgap tuning method, well-suited for planar, monolithic QD/QDash integration of optoelectronics components has been successfully developed.

  20. Hybrid optoelectronic neurocomputer: variants of realization

    NASA Astrophysics Data System (ADS)

    Evtikhiev, Nickolay N.; Starikov, Rostislav S.; Scherbakov, Igor B.; Gaponov, Alexandr E.; Onyky, Boris N.

    1995-04-01

    The optoelectronic devices are the most effective for realization in the form of the vector- matrix multiplier. Proposed optoelectronic neurocomputers (OENC) consist of optical vector- matrix multiplier (OVMM), random access memory (RAM) and electronic control system. There are two variants of realization. The first neurocomputer scheme includes OVMM based on MAOM -- multichannel multifrequency acousto-optic modulator (Bragg cell). MAOM is the fastest up-to-date spatial light modulator. The second neurocomputer is constructed on the basis of planar OVMM (POVMM). Vector-matrix multiplication in POVMM is executed in a very small volume. The POVMM consists of matrix of light emitting diodes and array of linear photodetectors. A special computer program `NEUROEMULATOR' was designed to learn and to test performance of neural networks. Neural networks were trained with gradient and stochastic algorithms. The paper presents results of computer simulation and hardware implementation of neural networks.

  1. Block copolymers for opto-electronics

    NASA Astrophysics Data System (ADS)

    Sun, Sam-Shajing; Fan, Zhen; Wang, Yiqing; Taft, Charles; Haliburton, James H.; Maaref, Shahin; Ledbetter, Abram J.; Bonner, Carl E.

    2004-05-01

    A D(donor)-B(bridge)-A(acceptor)-B(bridge)-type block copolymer system has been developed and preliminarily examined for potential opto-electronic photovoltaic functions. The unique feature of the device includes a primary DBAB-type block copolymer backbone, where D and A are conjugated donor and acceptor polymer blocks, and B is a non-conjugated and flexible chain, a π orbital stacked and conjugated chain self-assembled and ordered "secondary structure", and a donor/acceptor asymmetric layers sandwiched D/A columnar "tertiary structure". This structure is expected to improve photovoltaic power conversion efficiency significantly in comparison to most existing organic or polymeric donor/acceptor binary photovoltaic systems due to the reduction of "exciton loss", the "carrier loss", as well as the "photon loss" via three-dimensional space and energy level optimizations. Preliminary experimental results revealed better morphology and opto-electronic properties of DBAB vs. D/A blends.

  2. Optoelectronic Systems Trained With Backpropagation Through Time.

    PubMed

    Hermans, Michiel; Dambre, Joni; Bienstman, Peter

    2015-07-01

    Delay-coupled optoelectronic systems form promising candidates to act as powerful information processing devices. In this brief, we consider such a system that has been studied before in the context of reservoir computing (RC). Instead of viewing the system as a random dynamical system, we see it as a true machine-learning model, which can be fully optimized. We use a recently introduced extension of backpropagation through time, an optimization algorithm originally designed for recurrent neural networks, and use it to let the network perform a difficult phoneme recognition task. We show that full optimization of all system parameters of delay-coupled optoelectronics systems yields a significant improvement over the previously applied RC approach.

  3. Terahertz optoelectronics with surface plasmon polariton diode.

    PubMed

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  4. Technologies for highly parallel optoelectronic integrated circuits

    SciTech Connect

    Lear, K.L.

    1994-10-01

    While summarily reviewing the range of optoelectronic integrated circuits (OEICs), this paper emphasizes technology for highly parallel optical interconnections. Market volume and integration suitability considerations highlight board-to-board interconnects within systems as an initial insertion point for large OEIC production. The large channel count of these intrasystem interconnects necessitates two-dimensional laser transmitter and photoreceiver arrays. Surface normal optoelectronic components are promoted as a basis for OEICs in this application. An example system is discussed that uses vertical cavity surface emitting lasers for optical buses between layers of stacked multichip modules. Another potentially important application for highly parallel OEICs is optical routing or packet switching, and examples of such systems based on smart pixels are presented.

  5. Optoelectronic Instruments For Analysis Of Surface Defects

    NASA Technical Reports Server (NTRS)

    Collins, J. David; Mueller, Robert P.; Davis, Richard M.; Gleman, Stuart M.; Hallberg, Carl G.; Thayer, Stephen W.; Thompson, David L.; Thompson, James E.

    1995-01-01

    Family of portable optoelectronic instruments developed to facilitate inspection of surface flaws like gouges, scratches, raised metal, and dents on large metal workpieces subject to surface-finish requirements. Instrument brought to workpiece and semiautomatically makes electronic record of three-dimensional shape of flaw. Entire inspection process takes only minutes. Prototype instrument includes structured-light microscope. Concept involves projection of known pattern of light onto surface inspected. Topography of surface determined from distortion of pattern as viewed through instrument.

  6. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  7. Microfluidic devices and methods including porous polymer monoliths

    DOEpatents

    Hatch, Anson V; Sommer, Gregory J; Singh, Anup K; Wang, Ying-Chih; Abhyankar, Vinay V

    2014-04-22

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  8. Microfluidic devices and methods including porous polymer monoliths

    SciTech Connect

    Hatch, Anson V.; Sommer, Gregory j.; Singh, Anup K.; Wang, Ying-Chih; Abhyankar, Vinay

    2015-12-01

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  9. Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting

    NASA Astrophysics Data System (ADS)

    Cozzan, Clayton; Brady, Michael J.; O'Dea, Nicholas; Levin, Emily E.; Nakamura, Shuji; DenBaars, Steven P.; Seshadri, Ram

    2016-10-01

    With high power light emitting diodes and laser diodes being explored for white light generation and visible light communication, thermally robust encapsulation schemes for color-converting inorganic phosphors are essential. In the current work, the canonical blue-emitting phosphor, high purity Eu-doped BaMgAl10O17, has been prepared using microwave-assisted heating (25 min) and densified into translucent ceramic phosphor monoliths using spark plasma sintering (30 min). The resulting translucent ceramic monoliths convert UV laser light to blue light with the same efficiency as the starting powder and provide superior thermal management in comparison with silicone encapsulation.

  10. Fabrication of Monolithic RERTR Fuels by Hot Isostatic Pressing

    SciTech Connect

    Jan-Fong Jue; Blair H. Park; Curtis R. Clark; Glenn A. Moore; Dennis D. Keiser, Jr.

    2010-11-01

    The RERTR (Reduced Enrichment for Research and Test Reactors) Program is developing advanced nuclear fuels for high-power test reactors. Monolithic fuel design provides higher uranium loading than that of the traditional dispersion fuel design. Hot isostatic pressing is a promising process for low-cost batch fabrication of monolithic RERTR fuel plates for these high-power reactors. Bonding U Mo fuel foil and 6061 Al cladding by hot isostatic press bonding was successfully developed at Idaho National Laboratory. Due to the relatively high processing temperature, the interaction between fuel meat and aluminum cladding is a concern. Two different methods were employed to mitigate this effect: (1) a diffusion barrier and (2) a doping addition to the interface. Both types of fuel plates have been fabricated by hot isostatic press bonding. Preliminary results show that the direct fuel/cladding interaction during the bonding process was eliminated by introducing a thin zirconium diffusion barrier layer between the fuel and the cladding. Fuel plates were also produced and characterized with a silicon-rich interlayer between fuel and cladding. This paper reports the recent progress of this developmental effort and identifies the areas that need further attention.

  11. Flexible transparent conducting composite films using a monolithically embedded AgNW electrode with robust performance stability

    NASA Astrophysics Data System (ADS)

    Im, Hyeon-Gyun; Jin, Jungho; Ko, Ji-Hoon; Lee, Jaemin; Lee, Jung-Yong; Bae, Byeong-Soo

    2013-12-01

    We report on the performance of an all-in-one flexible hybrid conducting film employing a monolithically embedded AgNW transparent electrode and a high-performance glass-fabric reinforced composite substrate (AgNW-GFRHybrimer film). Specifically, we perform in-depth investigations on the stability of the AgNW-GFRHybrimer film against heat, thermal oxidation, and wet chemicals to demonstrate the potential of the hybrid conducting film as a robust electrode platform for thin-film optoelectronic devices. With the ease of large-area processability, smooth surface topography, and robust performance stability, the AgNW-GFRHybrimer film can be a promising platform for high-performance optoelectronic devices.We report on the performance of an all-in-one flexible hybrid conducting film employing a monolithically embedded AgNW transparent electrode and a high-performance glass-fabric reinforced composite substrate (AgNW-GFRHybrimer film). Specifically, we perform in-depth investigations on the stability of the AgNW-GFRHybrimer film against heat, thermal oxidation, and wet chemicals to demonstrate the potential of the hybrid conducting film as a robust electrode platform for thin-film optoelectronic devices. With the ease of large-area processability, smooth surface topography, and robust performance stability, the AgNW-GFRHybrimer film can be a promising platform for high-performance optoelectronic devices. Electronic supplementary information (ESI) available: Further characteristics of AgNW-GFRHybrimer films and thermal oxidation of AgNW on glass. See DOI: 10.1039/c3nr05348b

  12. Synthesis and applications of monolithic HPLC columns

    NASA Astrophysics Data System (ADS)

    Liang, Chengdu

    Silica and carbon monolithic columns were synthesized and modified for liquid chromatography applications. Column configurations and cladding techniques were investigated in detail. Three novel approaches have been developed for the synthesis of bimodal porous rods. Out of these three methods, gel-casting was adopted for the synthesis of silica monoliths with ordered mesopores and uniform macropores; the use of colloidal templates and dual phase separation has been successfully implemented for the synthesis of carbon monoliths with well-controlled meso- and macro- porosities. The formation of mesopores in carbon materials has been further studied in the microphase separation of block copolymers. Electrochemical modification of carbon monoliths was discovered to be an efficient method for converting covalently bonded functionalities to carbon monoliths. N,N'-diethylaminobenzene has been attached to carbon surface for the separation of proteins and protein digests. The performances of carbon-based monolithic columns were studied intensely through frontal analysis and Van Deemter plot. Temperature and pressure effects were also investigated in carbon-based columns. The density of bonding on the modified carbon monoliths was characterized by thermogravimetric analysis.

  13. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  14. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  15. Computational Design of Materials for Monolithic Integration with Si

    NASA Astrophysics Data System (ADS)

    Moll, Nikolaj

    2000-03-01

    A novel class of semiconductors is introduced which is optically active and solves the problems with lattice-constant mismatches and polarity mismatches that normally are an issue in heteroepitaxial growth of III-V alloys on silicon substrates. Using ab initio total energy calculations and quasi-particle GW calculations the physical properties of various configurations of these novel materials are computed. A particular suitable configuration is identified. This configuration is lattice-constant matched to Si. Estimated thermal expansion coefficients indicate that the lattice constant continues to match at room temperature. This lattice-constant matched configuration also possesses a direct band gap which is very close to the operating wavelength of optical fibers. Therefore this novel class could lead to monolithic integration of optical materials and Si circuits. Further configurations are investigated and discussed which exhibit properties that could be useful for other technological applications such as far infrared detectors and emitters.

  16. Monolithic fabrication of nanofluidic artificial gel media for DNA electrophoresis

    NASA Astrophysics Data System (ADS)

    Turner, Stephen W.; Craighead, Harold G.

    1998-03-01

    A new technique for fabricating 2D artificial gels for DNA electrophoresis is presented. The technique differs from previous approaches in that the entire device is fabricated as a monolithic unit using exclusively planar processing techniques borrowed from semiconductor electronics fabrication. The height of the fluid gap between the dielectric floor and ceiling is determined by the thickness of a sacrificial layer which is removed by a wet chemical etch. This allows precise control and excellent uniformity of the gap over an entire silicon wafer. Gap control better than 5 nm has been demonstrated for floor-to-ceiling height for the fluid gap. The lateral resolution which can be attained is limited only by available lithographic techniques. In this work, 1 micrometers diameter pillars are defined with i-line photolithography. Fluid interconnects are established with a liquid meniscus to the hedge of the device.

  17. Electronic and optoelectronic materials and devices inspired by nature

    NASA Astrophysics Data System (ADS)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  18. Electronic and optoelectronic materials and devices inspired by nature.

    PubMed

    Meredith, P; Bettinger, C J; Irimia-Vladu, M; Mostert, A B; Schwenn, P E

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  19. Optoelectronically probing the density of nanowire surface trap states to the single state limit

    SciTech Connect

    Dan, Yaping

    2015-02-02

    Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 10{sup 9 }cm{sup −2}/eV at deep levels to 10{sup 12 }cm{sup −2}/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

  20. Method of fabricating porous silicon carbide (SiC)

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1995-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  1. Overview of Silicon Detectors in STAR: Present and Future

    SciTech Connect

    Kabana, Sonia; Collaboration: The SVT, SSD and HFT detector groups of the STAR experiment at RHIC

    2011-12-13

    The STAR experiment at RHIC aims to study the QCD phase transition and the origin of the spin of the proton. Its main detector for charged particle track reconstruction is a Time Projection Chamber, which has been supplemented with a silicon detector involving two different technologies, in particular double-sided silicon strip and silicon drift technology. STAR is preparing now for a new Silicon Vertex Detector, using double-sided silicon strip, single-sided silicon strip-pads, and CMOS monolithic active pixel sensors technology, planned to take data in 2014. We give an overview of the design, calibration and performances of the silicon detectors used by the STAR experiment in the past and the expected performances of the future silicon detector upgrade.

  2. Monolithic solid electrolyte oxygen pump

    DOEpatents

    Fee, Darrell C.; Poeppel, Roger B.; Easler, Timothy E.; Dees, Dennis W.

    1989-01-01

    A multi-layer oxygen pump having a one-piece, monolithic ceramic structure affords high oxygen production per unit weight and volume and is thus particularly adapted for use as a portable oxygen supply. The oxygen pump is comprised of a large number of small cells on the order of 1-2 millimeters in diameter which form the walls of the pump and which are comprised of thin, i.e., 25-50 micrometers, ceramic layers of cell components. The cell components include an air electrode, an oxygen electrode, an electrolyte and interconnection materials. The cell walls form the passages for input air and for exhausting the oxygen which is transferred from a relatively dilute gaseous mixture to a higher concentration by applying a DC voltage across the electrodes so as to ionize the oxygen at the air electrode, whereupon the ionized oxygen travels through the electrolyte and is converted to oxygen gas at the oxygen electrode.

  3. Monolithic Continuous-Flow Bioreactors

    NASA Technical Reports Server (NTRS)

    Stephanopoulos, Gregory; Kornfield, Julia A.; Voecks, Gerald A.

    1993-01-01

    Monolithic ceramic matrices containing many small flow passages useful as continuous-flow bioreactors. Ceramic matrix containing passages made by extruding and firing suitable ceramic. Pores in matrix provide attachment medium for film of cells and allow free movement of solution. Material one not toxic to micro-organisms grown in reactor. In reactor, liquid nutrients flow over, and liquid reaction products flow from, cell culture immobilized in one set of channels while oxygen flows to, and gaseous reaction products flow from, culture in adjacent set of passages. Cells live on inner surfaces containing flowing nutrient and in pores of walls of passages. Ready access to nutrients and oxygen in channels. They generate continuous high yield characteristic of immobilized cells, without large expenditure of energy otherwise incurred if necessary to pump nutrient solution through dense biomass as in bioreactors of other types.

  4. Anisotropically structured magnetic aerogel monoliths

    NASA Astrophysics Data System (ADS)

    Heiligtag, Florian J.; Airaghi Leccardi, Marta J. I.; Erdem, Derya; Süess, Martin J.; Niederberger, Markus

    2014-10-01

    Texturing of magnetic ceramics and composites by aligning and fixing of colloidal particles in a magnetic field is a powerful strategy to induce anisotropic chemical, physical and especially mechanical properties into bulk materials. If porosity could be introduced, anisotropically structured magnetic materials would be the perfect supports for magnetic separations in biotechnology or for magnetic field-assisted chemical reactions. Aerogels, combining high porosity with nanoscale structural features, offer an exceptionally large surface area, but they are difficult to magnetically texture. Here we present the preparation of anatase-magnetite aerogel monoliths via the assembly of preformed nanocrystallites. Different approaches are proposed to produce macroscopic bodies with gradient-like magnetic segmentation or with strongly anisotropic magnetic texture.Texturing of magnetic ceramics and composites by aligning and fixing of colloidal particles in a magnetic field is a powerful strategy to induce anisotropic chemical, physical and especially mechanical properties into bulk materials. If porosity could be introduced, anisotropically structured magnetic materials would be the perfect supports for magnetic separations in biotechnology or for magnetic field-assisted chemical reactions. Aerogels, combining high porosity with nanoscale structural features, offer an exceptionally large surface area, but they are difficult to magnetically texture. Here we present the preparation of anatase-magnetite aerogel monoliths via the assembly of preformed nanocrystallites. Different approaches are proposed to produce macroscopic bodies with gradient-like magnetic segmentation or with strongly anisotropic magnetic texture. Electronic supplementary information (ESI) available: Digital photographs of dispersions and gels with different water-to-ethanol ratios; magnetic measurements of an anatase aerogel containing 0.25 mol% Fe3O4 nanoparticles; XRD patterns of the iron oxide and

  5. Shape engineering for electronic and optoelectronic properties of Si nanostructure solar cells

    NASA Astrophysics Data System (ADS)

    He, Yan; Zhao, Yipeng; Quan, Jun; Ouyang, Gang

    2016-10-01

    An analytical model is developed to explore the shape-dependent electronic and optoelectronic properties of silicon nanostructure solar cells, including nanocones (NCs), nanowires (NWs), and truncated-nanocones (TNCs), on the basis of atomic-bond-relaxation consideration and detailed balance principle. It is found that the inhomogeneous NCs can not only make the band gap shrink gradually from the top to the bottom, but also suppress the surface recombination and enhance light absorption. Moreover, the optimal performance of silicon nanostructures can be achieved through modulating the geometrical parameters. Strikingly, the SiNCs show the highest solar conversion efficiency compared with that of NWs and TNCs under identical conditions, which suggest that this kind of nanostructures could be expected to be applicable for the new-typed and friendly alternative solar cell unit.

  6. Planar Thermoelectric Microgenerators Based on Silicon Nanowires

    NASA Astrophysics Data System (ADS)

    Dávila, D.; Tarancón, A.; Kendig, D.; Fernández-Regúlez, M.; Sabaté, N.; Salleras, M.; Calaza, C.; Cané, C.; Gràcia, I.; Figueras, E.; Santander, J.; San Paulo, A.; Shakouri, A.; Fonseca, L.

    2011-05-01

    Silicon nanowires have been implemented in microfabricated structures to develop planar thermoelectric microgenerators ( μTEGs) monolithically integrated in silicon to convert heat flow from thermal gradients naturally present in the environment into electrical energy. The compatibility of typical microfabrication technologies and the vapor-liquid-solid (VLS) mechanism employed for silicon nanowire growth has been evaluated. Low-thermal-mass suspended structures have been designed, simulated, and microfabricated on silicon-on-insulator substrates to passively generate thermal gradients and operate as microgenerators using silicon nanowires as thermoelectric material. Both electrical measurements to evaluate the connectivity of the nanowires and thermoreflectance imaging to determine the heat transfer along the device have been employed.

  7. Silicone metalization

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  8. Silicone metalization

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  9. Activated carbon monoliths for methane storage

    NASA Astrophysics Data System (ADS)

    Chada, Nagaraju; Romanos, Jimmy; Hilton, Ramsey; Suppes, Galen; Burress, Jacob; Pfeifer, Peter

    2012-02-01

    The use of adsorbent storage media for natural gas (methane) vehicles allows for the use of non-cylindrical tanks due to the decreased pressure at which the natural gas is stored. The use of carbon powder as a storage material allows for a high mass of methane stored for mass of sample, but at the cost of the tank volume. Densified carbon monoliths, however, allow for the mass of methane for volume of tank to be optimized. In this work, different activated carbon monoliths have been produced using a polymeric binder, with various synthesis parameters. The methane storage was studied using a home-built, dosing-type instrument. A monolith with optimal parameters has been fabricated. The gravimetric excess adsorption for the optimized monolith was found to be 161 g methane for kg carbon.

  10. Assembly of opto-electronic module with improved heat sink

    DOEpatents

    Chan, Benson; Fortier, Paul Francis; Freitag, Ladd William; Galli, Gary T.; Guindon, Francois; Johnson, Glen Walden; Letourneau, Martial; Sherman, John H.; Tetreault, Real

    2004-11-23

    A heat sink for a transceiver optoelectronic module including dual direct heat paths and a structure which encloses a number of chips having a central web which electrically isolates transmitter and receiver chips from each other. A retainer for an optical coupler having a port into which epoxy is poured. An overmolded base for an optoelectronic module having epoxy flow controller members built thereon. Assembly methods for an optoelectronic module including gap setting and variation of a TAB bonding process.

  11. Flexible transparent conducting hybrid film using a surface-embedded copper nanowire network: a highly oxidation-resistant copper nanowire electrode for flexible optoelectronics.

    PubMed

    Im, Hyeon-Gyun; Jung, Soo-Ho; Jin, Jungho; Lee, Dasom; Lee, Jaemin; Lee, Daewon; Lee, Jung-Yong; Kim, Il-Doo; Bae, Byeong-Soo

    2014-10-28

    We report a flexible high-performance conducting film using an embedded copper nanowire transparent conducting electrode; this material can be used as a transparent electrode platform for typical flexible optoelectronic devices. The monolithic composite structure of our transparent conducting film enables simultaneously an outstanding oxidation stability of the copper nanowire network (14 d at 80 °C), an exceptionally smooth surface topography (R(rms) < 2 nm), and an excellent opto-electrical performances (Rsh = 25 Ω sq(-1) and T = 82%). A flexible organic light emitting diode device is fabricated on the transparent conducting film to demonstrate its potential as a flexible copper nanowire electrode platform.

  12. Large-Scale Graphene Film Deposition for Monolithic Device Fabrication

    NASA Astrophysics Data System (ADS)

    Al-shurman, Khaled

    Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors. The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an urgent need for a new platform material to replace Si. Graphene is considered a promising material with enormous potential applications in many electronic and optoelectronics devices due to its superior properties. There are several techniques to produce graphene films. Among these techniques, chemical vapor deposition (CVD) offers a very convenient method to fabricate films for large-scale graphene films. Though CVD method is suitable for large area growth of graphene, the need for transferring a graphene film to silicon-based substrates is required. Furthermore, the graphene films thus achieved are, in fact, not single crystalline. Also, graphene fabrication utilizing Cu and Ni at high growth temperature contaminates the substrate that holds Si CMOS circuitry and CVD chamber as well. So, lowering the deposition temperature is another technological milestone for the successful adoption of graphene in integrated circuits fabrication. In this research, direct large-scale graphene film fabrication on silicon based platform (i.e. SiO2 and Si3N4) at low temperature was achieved. With a focus on low-temperature graphene growth, hot-filament chemical vapor deposition (HF-CVD) was utilized to synthesize graphene film using 200 nm thick nickel film. Raman spectroscopy was utilized to examine graphene formation on the bottom side of the Ni film

  13. Optoelectronic and Photonic Devices for Optical Communications Systems

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Kayali, S.

    2000-01-01

    General overview of optical communications was described. Efforts were concentrated for the reliability concerns of the optoelectronic and photonic parts needed for potential applications in space environments.

  14. Shallow halogen vacancies in halide optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Du, Mao-Hua

    2014-11-01

    Halogen vacancies (VH ) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., C H3N H3Pb I3 and TlBr. Both C H3N H3Pb I3 and TlBr have been found to have shallow VH , in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., C H3N H3Pb I3 , C H3N H3Sn I3 (photovoltaic materials), TlBr, and CsPbB r3 (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of n s2 ions both play important roles in creating shallow VH in halides such as C H3N H3Pb I3 , C H3N H3Sn I3 , and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH , such as those with large cation-cation distances and low anion coordination numbers and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH . The results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  15. Shallow halogen vacancies in halide optoelectronic materials

    DOE PAGES

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VHmore » is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.« less

  16. In-situ nanochemistry for optoelectronics

    NASA Astrophysics Data System (ADS)

    Kim, Won Jin

    This thesis describes recent results on simple methods to arrange nanosize objects such as semiconductor nanocrystals, noble metal nanoparticles, and upconversion nanophosphors by means of top-down processes. Specific focus is directed towards approaches to produce predefined patterns of various nanostructure materials using optical lithography for direct writing of films for optoelectronic and electronic devices. To obtain photo-patternability, the nanostructure materials [for example semiconductor nanocrystals (CdSe, CdTe, PbSe), metallic nanoparticles (Ag), upconversion nanophosphors (Er3+/Yb 3+ or Tm3+/Yb3+ co-doped NaYF4 ), and transparent conducting oxide nanoparticles (ITO, ZnO)] were functionalized by incorporation of the functional ligand t-butoxycarbonyl (t-BOC) which has an acid-labile moiety. The t-BOC group undergoes a cleavage, when subjected to UV irradiation in the presence of a photo acid generator (PAG) to releases isobutene and carbon dioxide. Depending on the need of the application, either the exposed regions (negative pattern) or the non-exposed regions (positive pattern) could be developed from the exposed films by appropriate solvent selection. The photo exposed regions of the film are rendered hydrophilic due to the degradation of the t-BOC, the un-exposed regions remain hydrophobic. This solubility change in the QDs is the basis of their patternablity. The un-exposed regions can be removed to obtain the negative pattern by washing with hydrophobic solvents, whereas the exposed regions can be selectively removed to obtain positive pattern by washing with hydrophilic solvents. This change in the surface chemistry results in the ability to photo-pattern the various nanostructure materials where desired for a number of optoelectronic device geometries. We demonstrate that the ultimate resolution (linewidth and spacing) of this technique is below submicron. Details on technological aspects concerning nanoparticle patterning as well as practical

  17. Origin of the visible emission of black silicon microstructures

    SciTech Connect

    Fabbri, Filippo E-mail: giancarlo.salviati@cnr.it; Lin, Yu-Ting; Bertoni, Giovanni; Rossi, Francesca; Salviati, Giancarlo E-mail: giancarlo.salviati@cnr.it; Mazur, Eric

    2015-07-13

    Silicon, the mainstay semiconductor in microelectronics, is considered unsuitable for optoelectronic applications due to its indirect electronic band gap that limits its efficiency as light emitter. Here, we univocally determine at the nanoscale the origin of visible emission in microstructured black silicon by cathodoluminescence spectroscopy and imaging. We demonstrate the formation of amorphous silicon oxide microstructures with a white emission. The white emission is composed by four features peaking at 1.98 eV, 2.24 eV, 2.77 eV, and 3.05 eV. The origin of such emissions is related to SiO{sub x} intrinsic point defects and to the sulfur doping due to the laser processing. Similar results go in the direction of developing optoelectronic devices suitable for silicon-based circuitry.

  18. Review of silicon photonics: history and recent advances

    NASA Astrophysics Data System (ADS)

    Ye, Winnie N.; Xiong, Yule

    2013-09-01

    Silicon photonics has attracted tremendous attention and research effort as a promising technology in optoelectronic integration for computing, communications, sensing, and solar harvesting. Mainly due to the combination of its excellent material properties and the complementary metal-oxide semiconductor (CMOS) fabrication processing technology, silicon has becoming the material choice for photonic and optoelectronic circuits with low cost, ultra-compact device footprint, and high-density integration. This review paper provides an overview on silicon photonics, by highlighting the early work from the mid-1980s on the fundamental building blocks such as silicon platforms and waveguides, and the main milestones that have been achieved so far in the field. A summary of reported work on functional elements in both passive and active devices, as well as the applications of the technology in interconnect, sensing, and solar cells, is identified.

  19. Optical thin film metrology for optoelectronics

    NASA Astrophysics Data System (ADS)

    Petrik, Peter

    2012-12-01

    The manufacturing of optoelectronic thin films is of key importance, because it underpins a significant number of industries. The aim of the European joint research project for optoelectronic thin film characterization (IND07) in the European Metrology Research Programme of EURAMET is to develop optical and X-ray metrologies for the assessment of quality as well as key parameters of relevant materials and layer systems. This work is intended to be a step towards the establishment of validated reference metrologies for the reliable characterization, and the development of calibrated reference samples with well-defined and controlled parameters. In a recent comprehensive study (including XPS, AES, GD-OES, GD-MS, SNMS, SIMS, Raman, SE, RBS, ERDA, GIXRD), Abou-Ras et al. (Microscopy and Microanalysis 17 [2011] 728) demonstrated that most characterization techniques have limitations and bottle-necks, and the agreement of the measurement results in terms of accurate, absolute values is not as perfect as one would expect. This paper focuses on optical characterization techniques, laying emphasis on hardware and model development, which determine the kind and number of parameters that can be measured, as well as their accuracy. Some examples will be discussed including optical techniques and materials for photovoltaics, biosensors and waveguides.

  20. Optoelectronic pH Meter: Further Details

    NASA Technical Reports Server (NTRS)

    Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

    2009-01-01

    A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

  1. Optoelectronic inventory system for special nuclear material

    SciTech Connect

    Sieradzki, F.H.

    1994-01-01

    In support of the Department of Energy`s Dismantlement Program, the Optoelectronics Characterization and Sensor Development Department 2231 at Sandia National Laboratories/New Mexico has developed an in situ nonintrusive Optoelectronic Inventory System (OIS) that has the potential for application wherever periodic inventory of selected material is desired. Using a network of fiber-optic links, the OIS retrieves and stores inventory signatures from data storage devices (which are permanently attached to material storage containers) while inherently providing electromagnetic pulse immunity and electrical noise isolation. Photovoltaic cells (located within the storage facility) convert laser diode optic power from a laser driver to electrical energy. When powered and triggered, the data storage devices sequentially output their digital inventory signatures through light-emitting diode/photo diode data links for retrieval and storage in a mobile data acquisition system. An item`s exact location is determined through fiber-optic network and software design. The OIS provides an on-demand method for obtaining acceptable inventory reports while eliminating the need for human presence inside the material storage facility. By using modularization and prefabricated construction with mature technologies and components, an OIS installation with virtually unlimited capacity can be tailored to the customer`s requirements.

  2. Reconfigurable Optical Interconnections Using Dynamic Optoelectronic Holograms

    NASA Astrophysics Data System (ADS)

    Schulze, Elmar

    1988-04-01

    Increasing complexity and processing speed of electronic circuits and a high device density have led to serious problems in electrical interconnections. Their limitations arise from their signal transmission capacity. power consumption. crosstalk. and reliability. Optical links may solve such problems by offering high data rates of several gigabits per second. large fanouts of up to 100 loads. good reliability and less power expenditure. Optical fibers, integrated optical waveguides or free-space transmission links may be applicable. For the free-space links, lenses. mirrors and holograms can be used to guide the light waves. In this paper, reconfigurable optical interconnection schemes are proposed and described which are based on optoelectronic holograms. Their interference patterns can be changed dynamically. To establish connections as free-space links, the light beams emitted from even hundreds of light sources are imaged onto an array of small dynamic holograms. Their interference patterns are optically and electronically controllable. These holograms diffract and focus each of the incident light beams individually onto the receiving photo-diodes. By changing the hologram interference patterns dynamically. an optical switch is obtained. It renders the establishment of reconfigurable optical interconnections. As optoelectronic holograms very-high-resolution spatial light modulators are proposed.

  3. A monolithic, standard CMOS, fully differential optical receiver with an integrated MSM photodetector

    NASA Astrophysics Data System (ADS)

    Changliang, Yu; Luhong, Mao; Xindong, Xiao; Sheng, Xie; Shilin, Zhang

    2009-10-01

    This paper presents a realization of a silicon-based standard CMOS, fully differential optoelectronic integrated receiver based on a metal-semiconductor-metal light detector (MSM photodetector). In the optical receiver, two MSM photodetectors are integrated to convert the incident light signal into a pair of fully differential photogenerated currents. The optoelectronic integrated receiver was designed and implemented in a chartered 0.35 μm, 3.3 V standard CMOS process. For 850 nm wavelength, it achieves a 1 GHz 3 dB bandwidth due to the MSM photodetector's low capacitance and high intrinsic bandwidth. In addition, it has a transimpedance gain of 98.75 dBΩ, and an equivalent input integrated referred noise current of 283 nA from 1 Hz up to -3 dB frequency.

  4. Fabrication of turbine components and properties of sintered silicon nitride

    NASA Technical Reports Server (NTRS)

    Neil, J. T.; French, K. W.; Quackenbush, C. L.; Smith, J. T.

    1982-01-01

    This paper presents a status report on the injection molding of sinterable silicon nitride at GTE Laboratories. The effort involves fabrication of single axial turbine blades and monolithic radial turbine rotors. The injection molding process is reviewed and the fabrication of the turbine components discussed. Oxidation resistance and strength results of current injection molded sintered silicon nitride as well as dimensional checks on sintered turbine blades demonstrate that this material is a viable candidate for high temperature structural applications.

  5. Smart Sensing Strip Using Monolithically Integrated Flexible Flow Sensor for Noninvasively Monitoring Respiratory Flow.

    PubMed

    Jiang, Peng; Zhao, Shuai; Zhu, Rong

    2015-12-15

    This paper presents a smart sensing strip for noninvasively monitoring respiratory flow in real time. The monitoring system comprises a monolithically-integrated flexible hot-film flow sensor adhered on a molded flexible silicone case, where a miniaturized conditioning circuit with a Bluetooth4.0 LE module are packaged, and a personal mobile device that wirelessly acquires respiratory data transmitted from the flow sensor, executes extraction of vital signs, and performs medical diagnosis. The system serves as a wearable device to monitor comprehensive respiratory flow while avoiding use of uncomfortable nasal cannula. The respiratory sensor is a flexible flow sensor monolithically integrating four elements of a Wheatstone bridge on single chip, including a hot-film resistor, a temperature-compensating resistor, and two balancing resistors. The monitor takes merits of small size, light weight, easy operation, and low power consumption. Experiments were conducted to verify the feasibility and effectiveness of monitoring and diagnosing respiratory diseases using the proposed system.

  6. MONOLITHIC ACTIVE PIXEL MATRIX WITH BINARY COUNTERS IN AN SOI PROCESS.

    SciTech Connect

    DUPTUCH,G.; YAREMA, R.

    2007-06-07

    The design of a Prototype monolithic active pixel matrix, designed in a 0.15 {micro}m CMOS SOI Process, is presented. The process allowed connection between the electronics and the silicon volume under the layer of buried oxide (BOX). The small size vias traversing through the BOX and implantation of small p-type islands in the n-type bulk result in a monolithic imager. During the acquisition time, all pixels register individual radiation events incrementing the counters. The counting rate is up to 1 MHz per pixel. The contents of counters are shifted out during the readout phase. The designed prototype is an array of 64 x 64 pixels and the pixel size is 26 x 26 {micro}m{sup 2}.

  7. Method of forming crystalline silicon devices on glass

    DOEpatents

    McCarthy, Anthony M.

    1995-01-01

    A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

  8. Method of forming crystalline silicon devices on glass

    DOEpatents

    McCarthy, A.M.

    1995-03-21

    A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

  9. Architectures for optoelectronic analogs of self-organizing neural networks.

    PubMed

    Farhat, N H

    1987-06-01

    Architectures for partitioning optoelectronic analogs of neural nets into input-output and internal groups to form a multilayered net capable of self-organization, self-programming, and learning are described. The architectures and implementation ideas given describe a class of optoelectronic neural net modules that, when interfaced to a conventional computer controller, can impart to it artificial intelligence attributes.

  10. Six Classes of Diffraction-Based Optoelectronic Instruments

    NASA Technical Reports Server (NTRS)

    Spremo, Stevan; Fuhr, Peter; Schipper, John

    2003-01-01

    Six classes of diffraction-based optoelectronic instruments have been invented as means for wavelength-based processing of light. One family of anticipated applications lies in scientific instrumentation for studying chemical and physical reactions that affect and/or are affected differently by light of different wavelengths or different combinations of wavelengths. Another family of anticipated applications lies in optoelectronic communication systems.

  11. Optoelectronic hit/miss transform for screening cervical smear slides

    NASA Astrophysics Data System (ADS)

    Narayanswamy, R.; Turner, R. M.; McKnight, D. J.; Johnson, K. M.; Sharpe, J. P.

    1995-06-01

    An optoelectronic morphological processor for detecting regions of interest (abnormal cells) on a cervical smear slide using the hit/miss transform is presented. Computer simulation of the algorithm tested on 184 Pap-smear images provided 95% detection and 5% false alarm. An optoelectronic implementation of the hit/miss transform is presented, along with preliminary experimental results.

  12. Radiation Effects on Optoelectronic Devices in Space Missions

    NASA Technical Reports Server (NTRS)

    Johnston, Allan H.

    2006-01-01

    Radiation degradation of optoelectronic devices is discussed, including effects on optical emitters, detectors and optocouplers. The importance of displacement damage is emphasized, including the limitations of non-ionizing energy loss (NIEL) in normalizing damage. Failures of optoelectronics in fielded space systems are discussed, along with testing and qualification methods.

  13. Optoelectronic determination of insect presence in fruit

    NASA Astrophysics Data System (ADS)

    Shrestha, Bim P.; Guyer, Daniel E.; Ariana, Diwan P.

    2004-03-01

    Opto-electronic methods represent a potential to identify the presence of insect activities on or within agricultural commodities. Such measurements may detect actual insect presence or indirect secondary changes in the product resulting from past or present insect activities. Preliminary imaging studies have demonstrated some unique spectral characteristics of insect larvae on cherries. A detailed study on spectral characteristics of healthy and infested tart cherry tissue with and without larvae (Plum Curculio) was conducted for reflectance, transmittance and interactance modes for each of UV and visible/NIR light sources. The intensity of transmitted UV signals through the tart cherry was found to be weak; however, the spectral properties of UV light in reflectance mode has revealed some typical characteristics of larvae on healthy and infested tissue. The larvae on tissue were found to exhibit UV induced fluorescence signals in the range of 400-700 nm. Multi spectral imaging of the halved tart cherry has also corroborated this particular behavior of plum curculio larvae. The gray scale subtraction between corresponding pixels in these multi-spectral images has helped to locate the larvae precisely on the tart cherry tissue background, which otherwise was inseparable. The spectral characteristics of visible/NIR energy in transmittance and reflectance mode are capable of estimating the secondary effect of infestation in tart cherry tissue. The study has shown the shifting in peaks of reflected and transmitted signals from healthy and infested tissues and coincides with the concept of browning of tissue at cell level as a process of infestation. Interactance study has been carried out to study the possibility of coupling opto-electronic devices with the existing pitting process. The shifting of peaks has been observed for the normalized intensity of healthy and infested tissues. The study has been able to establish the inherent spectral characteristic of these

  14. Shallow halogen vacancies in halide optoelectronic materials

    SciTech Connect

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  15. Adhesion of functional layer on polymeric substrates for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Amendola, E.; Cammarano, A.; Pezzuto, M.; Acierno, D.

    2009-06-01

    The use of plastic film substrates for organic electronic devices promises to enable new applications, such as flexible displays. Plastic substrates have several distinct advantages, such as ruggedness, robustness, ultra lightness, conformability and impact resistance over glass substrates, which are primarily used in flat panel displays (FPDs) today. However, high transparency, proper surface roughness, low gas permeability and high transparent electrode conductivity of the plastic substrate are required for commercial applications. Polyesters, both amorphous and semicrystalline, are a promising class of commercial polymer for optoelectronic applications. Surface modification of polyester films was performed via chemical solution determining hydrolysis or oxidation. Hydrolysis was carried out by means of sodium hydroxide solution and oxidation by using standard clean 1 (SC-1) of RCA procedure [1]. For this work we have used commercial polymer films of 100μm in thickness: AryLite [2], supplied by Ferrania Imaging Technologies S.p.A. and characterised by very high glass transition temperature, Mylar (Polyethylene Terephthalate PET) and Teonex (Polyethylene Naphthalate PEN) both supplied by Dupont. More over, a bioriented and semicrystalline PET have been used. The aim of this study is modifying the polymer surface to improve the adhesion between organic-inorganic layer. It was found that the NaOH and SC-1 treatment cause a decrease of contact angles. In the present study we have deposited a thin films of amorphous hydrogenated silicon (a-Si:H) and its oxide (SiO2) on a new high temperature polymer substrate, AryLite, by plasma enhanced chemical vapour deposition (PECVD) [3], with a radio frequency plasma system.

  16. Making Porous Luminescent Regions In Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W.; Jones, Eric W.

    1994-01-01

    Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

  17. Silicon and germanium nanocrystals: properties and characterization

    PubMed Central

    Carvalho, Alexandra; Coutinho, José

    2014-01-01

    Summary Group-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries. Over the last two decades of research, their potential for application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challenges with no parallel in the respective bulk material counterparts have arisen. In this review, we consider what has been achieved and what are the current limitations with regard to growth, characterization and modeling of silicon and germanium nanocrystals and related materials. PMID:25383290

  18. Taking a Large Monolith to Use for Teaching Soil Morphology.

    ERIC Educational Resources Information Center

    Smith, B. R.; And Others

    1989-01-01

    Described is a technique for taking a large monolith for the purpose of teaching soil structure. Materials and procedures are detailed. A survey of 93 students indicated that the larger monolith was preferred over the commonly used narrow ones. (CW)

  19. GaAs monolithic RF modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  20. Solution processed semiconductor alloy nanowire arrays for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Shimpi, Paresh R.

    In this dissertation, we use ZnO nanowire as a model system to investigate the potential of solution routes for bandgap engineering in semiconductor nanowires. Excitingly, successful Mg-alloying into ZnO nanowire arrays has been achieved using a two-step sequential hydrothermal method at low temperature (<155°C) without using post-annealing process. Evidently, both room temperature and 40 K photoluminescence (PL) spectroscopy revealed enhanced and blue-shifted near-band-edge ultraviolet (NBE UV) emission in the Mg-alloyed ZnO (ZnMgO) nanowire arrays, compared with ZnO nanowires. The specific template of densely packed ZnO nanowires is found to be instrumental in achieving the Mg alloying in low temperature solution process. By optimizing the density of ZnO nanowires and precursor concentration, 8-10 at.% of Mg content has been achieved in ZnMgO nanowires. Post-annealing treatment is conducted in oxygen-rich and oxygen-deficient environment at different temperatures and time durations on silicon and quartz substrates in order to study the structural and optical property evolution in ZnMgO nanowire arrays. Vacuum annealed ZnMgO nanowires on both substrates retained their hexagonal structures and PL results showed the enhanced but red-shifted NBE UV emission compared to ZnO nanowires with visible emission nearly suppressed, suggesting the reduced defects concentration and improvement in crystallinity of the nanowires. On the contrast, for ambient annealed ZnMgO nanowires on silicon substrate, as the annealing temperature increased from 400°C to 900°C, intensity of visible emission peak across blue-green-yellow-red band (˜400-660 nm) increased whereas intensity of NBE UV peak decreased and completely got quenched. This might be due to interface diffusion of oxidized Si (SiOx) and formation of (Zn,Mg)1.7SiO4 epitaxially overcoated around individual ZnMgO nanowire. On the other hand, ambient annealed ZnMgO nanowires grown on quartz showed a ˜6-10 nm blue-shift in

  1. Optoelectronic date acquisition system based on FPGA

    NASA Astrophysics Data System (ADS)

    Li, Xin; Liu, Chunyang; Song, De; Tong, Zhiguo; Liu, Xiangqing

    2015-11-01

    An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.

  2. Assembling silver nanowires using optoelectronic tweezers

    NASA Astrophysics Data System (ADS)

    Zhang, Shuailong; Cooper, Jonathan M.; Neale, Steve L.

    2016-03-01

    Light patterned dielectrophoresis or optoelectronic tweezers (OET) has been proved to be an effective micromanipulation technology for cell separation, cell sorting and control of cell interactions. Apart from being useful for cell biology experiments, the capability of moving small objects accurately also makes OET an attractive technology for other micromanipulation applications. In particular, OET has the potential to be used for efficiently and accurately assembling small optoelectronic/electronic components into circuits. This approach could produce a step change in the size of the smallest components that are routinely assembled; down from the current smallest standard component size of 400×200 μm (0402 metric) to components a few microns across and even nanostructured components. In this work, we have demonstrated the use of OET to manipulate conductive silver nanowires into different patterns. The silver nanowires (typical diameter: 60 nm; typical length: 10 μm) were suspended in a 15 mS/m solution of KCL in water and manipulated by positive dielectrophoresis force generated by OET. A proof-of-concept demonstration was also made to prove the feasibility of using OET to manipulate silver nanowires to form a 150-μm-long conductive path between two isolated electrodes. It can be seen that the resistance between two electrodes was effectively brought down to around 700 Ω after the silver nanowires were assembled and the solution evaporated. Future work in this area will focus on increasing the conductivity of these tracks, encapsulating the assembled silver nanowires to prevent silver oxidation and provide mechanical protection, which can be achieved via 3D printing and inkjet printing technology.

  3. Integrated NEMS and optoelectronics for sensor applications.

    SciTech Connect

    Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R.; Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade; Okandan, Murat; Peterson, Kenneth Allen

    2008-01-01

    This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

  4. Designing Catalytic Monoliths For Closed-Cycle CO2 Lasers

    NASA Technical Reports Server (NTRS)

    Guinn, Keith; Herz, Richard K.; Goldblum, Seth; Noskowski, ED

    1992-01-01

    LASCAT (Design of Catalytic Monoliths for Closed-Cycle Carbon Dioxide Lasers) computer program aids in design of catalyst in monolith by simulating effects of design decisions on performance of laser. Provides opportunity for designer to explore tradeoffs among activity and dimensions of catalyst, dimensions of monolith, pressure drop caused by flow of gas through monolith, conversion of oxygen, and other variables. Written in FORTRAN 77.

  5. Consolidation and densification methods for fibrous monolith processing

    SciTech Connect

    Sutaria, Manish P.; Rigali, Mark J.; Cipriani, Ronald A.; Artz, Gregory J.; Mulligan, Anthony C.

    2006-06-20

    Methods for consolidation and densification of fibrous monolith composite structures are provided. Consolidation and densification of two- and three-dimensional fibrous monolith components having complex geometries can be achieved by pressureless sintering. The fibrous monolith composites are formed from filaments having at least a first material composition generally surrounded by a second material composition. The composites are sintered at a pressure of no more than about 30 psi to provide consolidated and densified fibrous monolith composites.

  6. A High Resolution Monolithic Crystal, DOI, MR Compatible, PET Detector

    SciTech Connect

    Robert S Miyaoka

    2012-03-06

    The principle objective of this proposal is to develop a positron emission tomography (PET) detector with depth-of-interaction (DOI) positioning capability that will achieve state of the art spatial resolution and sensitivity performance for small animal PET imaging. When arranged in a ring or box detector geometry, the proposed detector module will support <1 mm3 image resolution and >15% absolute detection efficiency. The detector will also be compatible with operation in a MR scanner to support simultaneous multi-modality imaging. The detector design will utilize a thick, monolithic crystal scintillator readout by a two-dimensional array of silicon photomultiplier (SiPM) devices using a novel sensor on the entrance surface (SES) design. Our hypothesis is that our single-ended readout SES design will provide an effective DOI positioning performance equivalent to more expensive dual-ended readout techniques and at a significantly lower cost. Our monolithic crystal design will also lead to a significantly lower cost system. It is our goal to design a detector with state of the art performance but at a price point that is affordable so the technology can be disseminated to many laboratories. A second hypothesis is that using SiPM arrays, the detector will be able to operate in a MR scanner without any degradation in performance to support simultaneous PET/MR imaging. Having a co-registered MR image will assist in radiotracer localization and may also be used for partial volume corrections to improve radiotracer uptake quantitation. The far reaching goal of this research is to develop technology for medical research that will lead to improvements in human health care.

  7. Development of a monolithic ferrite memory array

    NASA Technical Reports Server (NTRS)

    Heckler, C. H., Jr.; Bhiwandker, N. C.

    1972-01-01

    The results of the development and testing of ferrite monolithic memory arrays are presented. This development required the synthesis of ferrite materials having special magnetic and physical characteristics and the development of special processes; (1) for making flexible sheets (laminae) of the ferrite composition, (2) for embedding conductors in ferrite, and (3) bonding ferrite laminae together to form a monolithic structure. Major problems encountered in each of these areas and their solutions are discussed. Twenty-two full-size arrays were fabricated and fired during the development of these processes. The majority of these arrays were tested for their memory characteristics as well as for their physical characteristics and the results are presented. The arrays produced during this program meet the essential goals and demonstrate the feasibility of fabricating monolithic ferrite memory arrays by the processes developed.

  8. A 30 GHz monolithic receive module

    NASA Technical Reports Server (NTRS)

    Mondal, J.; Contolatis, T.; Geddes, J.; Bauhahn, P.; Sokolov, V.

    1990-01-01

    The technical achievements and deliveries made during the duration of the program to develop a 30 GHz monolithic receive module for communication feed array applications and to deliver submodules and 30 GHz monolithic receive modules for experimental evaluation are discussed. Key requirements include an overall receive module noise figure of 5 dB, a 30 dB RF-to-RF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. In addition, the monolithic receive module design addresses a cost goal of less than one thousand dollars (1980 dollars) per module in unit buys of 5,000 or more, and a mechanical configuration that is applicable to a spaceborne phase array system. An additional task for the development and delivery of 32 GHz phase shifter integrated circuit (IC) for deep space communication is also described.

  9. Monolithic and mechanical multijunction space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1992-01-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  10. Channelized Optical Waveguides On Silicon

    NASA Astrophysics Data System (ADS)

    Hickernell, F. S.; Seaton, C. T.

    1987-02-01

    Silicon provides a natural substrate base for the development of channel waveguides and their integration with optoelectronic components. Using epitaxial growth, selective doping, and plasma etching, channel waveguides can be fabricated using single crystal silicon alone. Oxide layers of low optical index are readily formed by thermal means on silicon to provide a base upon which low-loss film waveguides can be formed by ion exchange and implantation, chemical vapor deposition, and physical vapor deposition. Thermally oxidized and nitrided layers provide a simple means for developing waveguides. The channel shape for ridge waveguides can be delineated by chemical etching and ion milling techniques. The anisotropic etch characteristics of silicon provide a natural channel for imbedding waveguides using organic and inorganic materials. This paper will review common semiconductor processing techniques used for the formation of channel waveguides on silicon and the performance results obtained to date. The use of channel waveguides for specific device developments will be described and the most promising areas for future development will be addressed.

  11. The 30-GHz monolithic receive module

    NASA Technical Reports Server (NTRS)

    Bauhahn, P.; Geddes, J.; Sokolov, V.; Contolatis, T.

    1988-01-01

    The fourth year progress is described on a program to develop a 27.5 to 30 GHz GaAs monolithic receive module for spaceborne-communication antenna feed array applications, and to deliver submodules for experimental evaluation. Program goals include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. Submicron gate length single and dual gate FETs are described and applied in the development of monolithic gain control amplifiers and low noise amplifiers. A two-stage monolithic gain control amplifier based on ion implanted dual gate MESFETs was designed and fabricated. The gain control amplifier has a gain of 12 dB at 29 GHz with a gain control range of over 13 dB. A two-stage monolithic low noise amplifier based on ion implanted MESFETs which provides 7 dB gain with 6.2 dB noise figure at 29 GHz was also developed. An interconnected receive module containing LNA, gain control, and phase shifter submodules was built using the LNA and gain control ICs as well as a monolithic phase shifter developed previously under this program. The design, fabrication, and evaluation of this interconnected receiver is presented. Progress in the development of an RF/IF submodule containing a unique ion implanted diode mixer diode and a broadband balanced mixer monolithic IC with on-chip IF amplifier and the initial design of circuits for the RF portion of a two submodule receiver are also discussed.

  12. Polymer network/carbon layer on monolith support and monolith catalytic reactor

    DOEpatents

    Nordquist, Andrew Francis; Wilhelm, Frederick Carl; Waller, Francis Joseph; Machado, Reinaldo Mario

    2003-08-26

    The present invention relates to an improved monolith catalytic reactor and a monolith support. The improvement in the support resides in a polymer network/carbon coating applied to the surface of a porous substrate and a catalytic metal, preferably a transition metal catalyst applied to the surface of the polymer network/carbon coating. The monolith support has from 100 to 800 cells per square inch and a polymer network/carbon coating with surface area of from 0.1 to 15 m.sup.2 /gram as measured by adsorption of N.sub.2 or Kr using the BET method.

  13. Functionalized silicon quantum dots by N-vinylcarbazole: synthesis and spectroscopic properties

    PubMed Central

    2014-01-01

    Silicon quantum dots (Si QDs) attract increasing interest nowadays due to their excellent optical and electronic properties. However, only a few optoelectronic organic molecules were reported as ligands of colloidal Si QDs. In this report, N-vinylcarbazole - a material widely used in the optoelectronics industry - was used for the modification of Si QDs as ligands. This hybrid nanomaterial exhibits different spectroscopic properties from either free ligands or Si QDs alone. Possible mechanisms were discussed. This type of new functional Si QDs may find application potentials in bioimaging, photovoltaic, or optoelectronic devices. PMID:25147489

  14. Macroporous silver monoliths using a simple surfactant

    NASA Astrophysics Data System (ADS)

    Khan, Farid; Eswaramoorthy, Muthusamy; Rao, C. N. R.

    2007-01-01

    An elegant method to synthesize porous silver monoliths using a simple surfactant cum reductant, Triton X-114, as the sacrificial template is described. The gel forming property of the surfactant with silver nitrate is utilized to make the porous framework. The monoliths obtained with a mixture of Triton X-114 and dextran have also been examined. A significant improvement in the pore structure was observed when Triton X-114 was used along with Ludox silica sol, followed by calcination and HF treatment. The presence of interparticle pores in the 20-25 nm range on the macroporous silver framework suggests the role of silica spheres in the nanopore formation.

  15. UPDATE ON MONOLITHIC FUEL FABRICATION METHODS

    SciTech Connect

    C. R. Clark; J. F. Jue; G. A. Moore; N. P. Hallinan; B. H. Park; D. E. Burkes

    2006-10-01

    Efforts to develop a viable monolithic research reactor fuel plate have continued at Idaho National Laboratory. These efforts have concentrated on both fabrication process refinement and scale-up to produce full sized fuel plates. Progress at INL has led to fabrication of hot isostatic pressed uranium-molybdenum bearing monolithic fuel plates. These miniplates are part of the RERTR-8 miniplate irradiation test. Further progress has also been made on friction stir weld processing which has been used to fabricate full size fuel plates which will be irradiated in the ATR and OSIRIS reactors.

  16. Increased thermal conductivity monolithic zeolite structures

    DOEpatents

    Klett, James; Klett, Lynn; Kaufman, Jonathan

    2008-11-25

    A monolith comprises a zeolite, a thermally conductive carbon, and a binder. The zeolite is included in the form of beads, pellets, powders and mixtures thereof. The thermally conductive carbon can be carbon nano-fibers, diamond or graphite which provide thermal conductivities in excess of about 100 W/mK to more than 1,000 W/mK. A method of preparing a zeolite monolith includes the steps of mixing a zeolite dispersion in an aqueous colloidal silica binder with a dispersion of carbon nano-fibers in water followed by dehydration and curing of the binder is given.

  17. Phonon processes in vertically aligned silicon nanowire arrays produced by low-cost all-solution galvanic displacement method

    NASA Astrophysics Data System (ADS)

    Banerjee, Debika; Trudeau, Charles; Gerlein, Luis Felipe; Cloutier, Sylvain G.

    2016-03-01

    The nanoscale engineering of silicon can significantly change its bulk optoelectronic properties to make it more favorable for device integration. Phonon process engineering is one way to enhance inter-band transitions in silicon's indirect band structure alignment. This paper demonstrates phonon localization at the tip of silicon nanowires fabricated by galvanic displacement using wet electroless chemical etching of a bulk silicon wafer. High-resolution Raman micro-spectroscopy reveals that such arrayed structures of silicon nanowires display phonon localization behaviors, which could help their integration into the future generations of nano-engineered silicon nanowire-based devices such as photodetectors and solar cells.

  18. An optoelectronic interferometric analog-to-digital converter

    NASA Astrophysics Data System (ADS)

    Evtikhiev, N. N.; Karinskii, S. S.; Mirovitskii, D. I.; Popkov, V. T.

    1987-02-01

    A high-speed optoelectronic analog-to-digital (A/D) converter utilizing waveguide interferometric modulators (WIMs) is analyzed in detail. A mathematical model is proposed which describes the relationship between the characteristics of WIMs in LiNbO3 and their manufacturing conditions. The requirements placed on the parameters of the manufacturing process for obtaining the desired modulator and optoelectronic A/D converter characteristics are determined. Results are presented of the R&D of a 4-bit optoelectronic A/D converter with a conversion rate of 160 MBit/s.

  19. Device characterization of the VCSEL-on-silicon as an on chip light source

    NASA Astrophysics Data System (ADS)

    Kwack, Myung-Joon; Jang, Ki-Seok; Joo, Jiho; Park, Hyundai; Oh, Jin Hyuk; Park, Jaegyu; Kim, Sanggi; Kim, Gyungock

    2016-03-01

    Advancement of silicon photonics technology can offer a new dimension in data communications with un-precedent bandwidth. Increasing the integration level in the silicon photonics is required to develop compact high-performance chip-level optical interconnects for future systems. Especially, monolithic integration of light source on a silicon wafer is important for future silicon photonic integrated circuits, since realizing a compact on-chip light source on a silicon wafer is a serious issue which impedes practical implementation of the silicon photonic interconnects. At present, due to the lack of a practical light source based on Group IV elements, flip chip-bonded or packaged lasers based on III-V semiconductor are usually being used as external light sources, to feed silicon modulators on SOI wafers to complete a photonic transmitter, except the reported silicon hybrid lasers monolithic-integrated on SOI wafers. To overcome above problem, we have proposed a compact on-chip light source, the directly monolithic-integrated VCSEL on a bulk silicon wafer (VCSEL-on-Si), based on the transplanted epitaxial film by substrate lift-off process and following device-fabrication on the bulk Si wafer. This can offer practical low-power-consumption light sources integrated on a silicon wafer, which can provide a complete chip-level I/O set when combined with monolithic-integrated vertical-illumination Ge-on-Si photodetectors on the same silicon wafer. In this work, we report the characterization of direct-modulation VCSELs-on-Si for λ ~850 nm with CW optical output power > ~2 mW and the threshold current < ~3 mA, over 10 Gb/s operations. We also discuss about the thermal characteristics of the VCSELs-on-Si.

  20. Field-effect electroluminescence in silicon nanocrystals.

    PubMed

    Walters, Robert J; Bourianoff, George I; Atwater, Harry A

    2005-02-01

    There is currently worldwide interest in developing silicon-based active optical components in order to leverage the infrastructure of silicon microelectronics technology for the fabrication of optoelectronic devices. Light emission in bulk silicon-based devices is constrained in wavelength to infrared emission, and in efficiency by the indirect bandgap of silicon. One promising strategy for overcoming these challenges is to make use of quantum-confined excitonic emission in silicon nanocrystals. A critical challenge for silicon nanocrystal devices based on nanocrystals embedded in silicon dioxide has been the development of a method for efficient electrical carrier injection. We report here a scheme for electrically pumping dense silicon nanocrystal arrays by a field-effect electroluminescence mechanism. In this excitation process, electrons and holes are both injected from the same semiconductor channel across a tunnelling barrier in a sequential programming process, in contrast to simultaneous carrier injection in conventional pn-junction light-emitting-diode structures. Light emission is strongly correlated with the injection of a second carrier into a nanocrystal that has been previously programmed with a charge of the opposite sign.

  1. Nanocrystalline silicon quantum dots thin films prepared by magnetron reaction sputtering

    NASA Astrophysics Data System (ADS)

    Zhao, Weiping; Deng, Jinxiang; Yang, Bing; Yu, Zhenrui; Aceves, Mariano

    2009-07-01

    Silicon is a kind of excellent semiconductor material and is one of the core material of microelectronics. But it is not a fine luminescent material. The photoluminescence(PL) will be obtained by excitation only when the size of silicon partials reduced to a certain value. Nanocrystalline silicon films have special structure and many excellent optoelectronic properties and are supposed to be applied in optoelectronic devices and large scale integrated circuits. In this paper, Nanocrystalline silicon films was deposited on silicon substrate by RF magnetron sputtering with pure Si target. And the working gas is the mixture of oxygen and argon .The content of O2 in working gas (O2/ O2 + Ar) and the power of sputtering were changed separately .However, the substrate temperature, working gas pressure and other conditions were definite. After annealing in the stove, we got the Nanocrystalline silicon particles in the thin films. Fourier transform infrared(FTIR) transmittance measurement was carried out to characterized Nanocrystalline silicon films. X-ray photoelectron spectroscopy (XPS) measurement was also performed to estimate the atom ratio of the Nanocrystalline silicon films. Raman scattering measurements was also taken in to characterize the Nanocrystalline silicon films. The formation of Nanocrystalline silicon filmswere depended partly on the parameters of experiment. The annealed silicon films were researched that the size of the Nanocrystalline silicon particles proved to be largely impacted by the annealing temperature in the thin film

  2. Plasmonic engineering of spontaneous emission from silicon nanocrystals

    PubMed Central

    Goffard, Julie; Gérard, Davy; Miska, Patrice; Baudrion, Anne-Laure; Deturche, Régis; Plain, Jérôme

    2013-01-01

    Silicon nanocrystals offer huge advantages compared to other semi-conductor quantum dots as they are made from an abundant, non-toxic material and are compatible with silicon devices. Besides, among a wealth of extraordinary properties ranging from catalysis to nanomedicine, metal nanoparticles are known to increase the radiative emission rate of semiconductor quantum dots. Here, we use gold nanoparticles to accelerate the emission of silicon nanocrystals. The resulting integrated hybrid emitter is 5-fold brighter than bare silicon nanocrystals. We also propose an in-depth analysis highlighting the role of the different physical parameters in the photoluminescence enhancement phenomenon. This result has important implications for the practical use of silicon nanocrystals in optoelectronic devices, for instance for the design of efficient down-shifting devices that could be integrated within future silicon solar cells. PMID:24037020

  3. Plasmonic engineering of spontaneous emission from silicon nanocrystals.

    PubMed

    Goffard, Julie; Gérard, Davy; Miska, Patrice; Baudrion, Anne-Laure; Deturche, Régis; Plain, Jérôme

    2013-01-01

    Silicon nanocrystals offer huge advantages compared to other semi-conductor quantum dots as they are made from an abundant, non-toxic material and are compatible with silicon devices. Besides, among a wealth of extraordinary properties ranging from catalysis to nanomedicine, metal nanoparticles are known to increase the radiative emission rate of semiconductor quantum dots. Here, we use gold nanoparticles to accelerate the emission of silicon nanocrystals. The resulting integrated hybrid emitter is 5-fold brighter than bare silicon nanocrystals. We also propose an in-depth analysis highlighting the role of the different physical parameters in the photoluminescence enhancement phenomenon. This result has important implications for the practical use of silicon nanocrystals in optoelectronic devices, for instance for the design of efficient down-shifting devices that could be integrated within future silicon solar cells.

  4. Method for forming silicon on a glass substrate

    DOEpatents

    McCarthy, Anthony M.

    1995-01-01

    A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

  5. Polymer monoliths synthesized by radiation co-polymerization in solution

    NASA Astrophysics Data System (ADS)

    Beiler, Barbara; Sáfrány, Ágnes

    2007-08-01

    Hydrophilic co-polymer monoliths were prepared by irradiating alcoholic solutions containing diethyleneglycol dimethacrylate (DEGDMA) and 2-hydroxyethylacrylate (HEA) monomers. The effect of monomer ratio, solvent properties and radiation dose on the porous properties of the monoliths was studied in detail and compared to the monolith prepared from DEGDMA. Increase of the HEA content in the co-monomer mixture (up to 18 vol%) resulted in monoliths with increased pore size and hydrophilic character. The biggest pores were obtained when methanol was used as solvent. The use of the monoliths as chromatographic columns for separation of proteins, amino and nucleic acids is also reported.

  6. Organic Optoelectronic Devices Employing Small Molecules

    NASA Astrophysics Data System (ADS)

    Fleetham, Tyler Blain

    Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt

  7. Magnetometer Based on Optoelectronic Microwave Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Strekalov, Dmitry; Matsko, Andrey

    2005-01-01

    proposed instrument, intended mainly for use as a magnetometer, would include an optoelectronic oscillator (OEO) stabilized by an atomic cell that could play the role of a magnetically tunable microwave filter. The microwave frequency would vary with the magnetic field in the cell, thereby providing an indication of the magnetic field. The proposed magnetometer would offer a combination of high accuracy and high sensitivity, characterized by flux densities of less than a picotesla. In comparison with prior magnetometers, the proposed magnetometer could, in principle, be constructed as a compact, lightweight instrument: It could fit into a package of about 10 by 10 by 10 cm and would have a mass <0.5 kg. As described in several prior NASA Tech Briefs articles, an OEO is a hybrid of photonic and electronic components that generates highly spectrally pure microwave radiation, and optical radiation modulated by the microwave radiation, through direct conversion between laser light and microwave radiation in an optoelectronic feedback loop. As used here, "atomic cell" signifies a cell containing a vapor, the constituent atoms of which can be made to undergo transitions between quantum states, denoted hyperfine levels, when excited by light in a suitable wavelength range. The laser light must be in this range. The energy difference between the hyperfine levels defines the microwave frequency. In the proposed instrument (see figure), light from a laser would be introduced into an electro-optical modulator (EOM). Amplitude-modulated light from the exit port of the EOM would pass through a fiber-optic splitter having two output branches. The light in one branch would be sent through an atomic cell to a photodiode. The light in the other branch would constitute the microwave-modulated optical output. Part of the light leaving the atomic cell could also be used to stabilize the laser at a frequency in the vicinity of the desired hyperfine or other quantum transition. The

  8. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    DOE PAGES

    Du, Mao -Hua; Shi, Hongliang; Ming, Wenmei

    2016-03-29

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns2 ions (e.g., Tl+, Pb2+, and Bi3+). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi3+, which is also an ns2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of bandmore » gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. As a result, defect calculations indeed show that

  9. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Ming, Wenmei; Du, Mao-Hua

    2016-03-01

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of n s2 ions (e.g., T l+ , P b2 + , and B i3 + ). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain B i3 + , which is also an n s2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected B i3 + based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n -BiSeBr, p -BiSI, and p -BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p -type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. Defect calculations indeed show that the

  10. Constant capacitance in nanopores of carbon monoliths.

    PubMed

    García-Gómez, Alejandra; Moreno-Fernández, Gelines; Lobato, Belén; Centeno, Teresa A

    2015-06-28

    The results obtained for binder-free electrodes made of carbon monoliths with narrow micropore size distributions confirm that the specific capacitance in the electrolyte (C2H5)4NBF4/acetonitrile does not depend significantly on the micropore size and support the foregoing constant result of 0.094 ± 0.011 F m(-2).

  11. Package Holds Five Monolithic Microwave Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Mysoor, Narayan R.; Decker, D. Richard; Olson, Hilding M.

    1996-01-01

    Packages protect and hold monolithic microwave integrated circuit (MMIC) chips while providing dc and radio-frequency (RF) electrical connections for chips undergoing development. Required to be compact, lightweight, and rugged. Designed to minimize undesired resonances, reflections, losses, and impedance mismatches.

  12. Quasi-monolithic tunable optical resonator

    NASA Technical Reports Server (NTRS)

    Arbore, Mark (Inventor); Tapos, Francisc (Inventor)

    2003-01-01

    An optical resonator has a piezoelectric element attached to a quasi-monolithic structure. The quasi-monolithic structure defines an optical path. Mirrors attached to the structure deflect light along the optical path. The piezoelectric element controllably strains the quasi-monolithic structure to change a length of the optical path by about 1 micron. A first feedback loop coupled to the piezoelectric element provides fine control over the cavity length. The resonator may include a thermally actuated spacer attached to the cavity and a mirror attached to the spacer. The thermally actuated spacer adjusts the cavity length by up to about 20 microns. A second feedback loop coupled to the sensor and heater provides a coarse control over the cavity length. An alternative embodiment provides a quasi-monolithic optical parametric oscillator (OPO). This embodiment includes a non-linear optical element within the resonator cavity along the optical path. Such an OPO configuration is broadly tunable and capable of mode-hop free operation for periods of 24 hours or more.

  13. Development of oxide fibrous monolith systems.

    SciTech Connect

    Goretta, K. C.

    1999-03-02

    Fibrous monolithic ceramics generally have a cellular structure that consists of a strong cell surrounded by a weaker boundary phase [1-5]. Fibrous monoliths (FMs) are produced from powders by conventional ceramic fabrication techniques, such as extrusion [1,2]. When properly engineered, they exhibit fail gracefully [3-5]. Several compositions of ceramics and cermets have been processed successfully in fibrous monolithic form [4]. The most thoroughly investigated fibrous monolith consists of Si{sub 3}N{sub 4} cells and a BN cell-boundary phase [3-5]. Through appropriate selection of initial powders and extrusion and hot-pressing parameters, very tough final products have been produced. The resultant high toughness is due primarily to delamination during fracture along textured platelike BN grains. The primary objectives of our program are to develop: (1) Oxide-based FMs, including new systems with improved properties; (2) FMs that can be pressureless sintered rather than hot-pressed; (3) Techniques for continuous extrusion of FM filaments, including solid freeform fabrication (SFF) for net-shape fabrication of FMs; (4) Predictive micromechanical models for FM design and performance; and (5) Ties with industrial producers and users of FMs.

  14. Purification of infective baculoviruses by monoliths.

    PubMed

    Gerster, Petra; Kopecky, Eva-Maria; Hammerschmidt, Nikolaus; Klausberger, Miriam; Krammer, Florian; Grabherr, Reingard; Mersich, Christa; Urbas, Lidija; Kramberger, Petra; Paril, Tina; Schreiner, Matthias; Nöbauer, Katharina; Razzazi-Fazeli, Ebrahim; Jungbauer, Alois

    2013-05-17

    A chromatographic process based on monoliths for purification of infective baculovirus without prior concentration step has been established. Baculovirus produced in Spodoptera frugiperda cells (Sf-9) were harvested by centrifugation, filtered through 0.8 μm filters and directly loaded onto radial 1 mL anion exchange monoliths with a channel size of 1.5-2.0 μm operated at a volumetric flow rate of one bed volume per minute. Optional an epoxy monolith was used as pre-column to reduce interfering compounds and substances influencing the capacity of anion exchange monoliths for baculovirus infectious virus could be eluted with a step gradient at salt concentrations of 440 mM NaCl. Recovery of infectious virus was highly influenced by composition and age of supernatant and ranged from 20 to >99% active baculovirus. Total protein content could be reduced to 1-8% and DNA content to 38-48% in main virus fraction. Infective virus could be 52-fold concentrated within 20.5h and simultaneously an 82-fold volume reduction was possible when loading 1150 mL (2.1×10(8) pfu/mL) onto 1 mL scale support.

  15. Polyorganosilazane preceramic binder development for reaction bonded silicon nitride composites

    SciTech Connect

    Mohr, D.L.; Starr, T.L. )

    1992-11-01

    This study has examined the use of two commercially available polyorganosilazanes for application as preceramic binders in a composite composed of silicon carbide fibers in a reaction bonded silicon nitride (RBSN) matrix. Ceramic monolithic and composite samples were produced. Density of monolithic and whisker reinforced RBSN samples containing the polysilazane binder was increased. Mercury intrusion porosimetry revealed a significant decrease in the pore sizes of samples containing a polyorganosilazane binder. Electron micrographs of samples containing the preceramic binder looked similar to control samples containing no precursor. Overall, incorporation of the polysilazane into monolithic and whisker reinforced samples resulted in significantly increased density and decreased porosity. Nitriding of the RBSN was slightly retarded by addition of the polysilazane binder. Samples with the preceramic binders contained increased contents of [alpha] versus [beta]-silicon nitride which may be due to interaction of hydrogen evolved from polysilazane pyrolysis with the nitriding process. Initial efforts to produce continuous fiber reinforced composites via this method have not realized the same improvements in density and porosity which have been observed for monolithic and whisker reinforced samples. Further, the addition of perceramic binder resulted in a more brittle fracture morphology as compared to similar composites made without the binder.

  16. Polyorganosilazane preceramic binder development for reaction bonded silicon nitride composites

    SciTech Connect

    Mohr, D.L.; Starr, T.L.

    1992-11-01

    This study has examined the use of two commercially available polyorganosilazanes for application as preceramic binders in a composite composed of silicon carbide fibers in a reaction bonded silicon nitride (RBSN) matrix. Ceramic monolithic and composite samples were produced. Density of monolithic and whisker reinforced RBSN samples containing the polysilazane binder was increased. Mercury intrusion porosimetry revealed a significant decrease in the pore sizes of samples containing a polyorganosilazane binder. Electron micrographs of samples containing the preceramic binder looked similar to control samples containing no precursor. Overall, incorporation of the polysilazane into monolithic and whisker reinforced samples resulted in significantly increased density and decreased porosity. Nitriding of the RBSN was slightly retarded by addition of the polysilazane binder. Samples with the preceramic binders contained increased contents of {alpha} versus {beta}-silicon nitride which may be due to interaction of hydrogen evolved from polysilazane pyrolysis with the nitriding process. Initial efforts to produce continuous fiber reinforced composites via this method have not realized the same improvements in density and porosity which have been observed for monolithic and whisker reinforced samples. Further, the addition of perceramic binder resulted in a more brittle fracture morphology as compared to similar composites made without the binder.

  17. System-level analysis of a smart optoelectronic database filter for relational database applications

    NASA Astrophysics Data System (ADS)

    Tang, Jianjing; Beyette, Fred R., Jr.

    2001-12-01

    A challenging task facing the designers for the next generation of archival storage system is to provide storage capacities several orders of magnitude larger than existing systems while maintaining current data access times. To meet this challenge, we have developed a smart optoelectronic database filter suitable for large capacity relational database systems that use page-oriented optical storage devices. The photonic VLSI device technology based database filter monolithically integrates optical detectors, photoreceiver circuits, data manipulation logic, and filter control circuitry onto a single CMOS chip. This paper presents the design and system level analysis of the database filter system. Simulation data suggested that a 32 X 32-bit filter fabricated in a 1.5 micrometers CMOS process could have an optical page read rate of 87 Mpages/s and support 123 Mrecords/s transfer rate to a host computer. Queuing theory is used to show that even with the limitation of finite queue capacity, a database filter chip could be controlled to work at near optimal performance where database search time is limited by the data transfer rate going into the host computer. Since only valid search data is passed through to the host computer, the introduction of a database filter can dramatically reduce database search time.

  18. Design and performance analysis of a smart optoelectronic database filter for relational database applications

    NASA Astrophysics Data System (ADS)

    Tang, Jianjing; Beyette, Fred R., Jr.

    2001-11-01

    A challenging task facing the designers for the next generation of archival storage system is to provide storage capacities several orders of magnitude larger than existing systems while maintaining current data access times. To meet this challenge, a smart optoelectronic database filter suitable for large capacity relational database systems that use page-oriented optical storage devices has been developed. The photonic VLSI device technology based database filter monolithically integrates optical detectors, photoreceiver circuits, data manipulation logic, and filter control circuitry onto a single CMOS chip. Since only valid search data is passed to the host computer, the introduction of a database filter can dramatically reduce database search time. This paper presents the design and performance analysis of the database filter system. Simulation data suggested that a 32 X 32-bit filter fabricated in a 0.35 micrometers CMOS process could have an optical page read rate of 263 Mpages/s and support 286 Mrecords/s transfer rate to a host computer.

  19. Cordierite silicon nitride filters

    SciTech Connect

    Sawyer, J.; Buchan, B. ); Duiven, R.; Berger, M. ); Cleveland, J.; Ferri, J. )

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  20. Silicon-based silicon–germanium–tin heterostructure photonics

    PubMed Central

    Soref, Richard

    2014-01-01

    The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479

  1. Optoelectronic performance issues in fiber-optic communications

    NASA Astrophysics Data System (ADS)

    Channin, D. J.

    1985-06-01

    The use of optoelectronic devices and components in fiber-optic communications systems is discussed. Optical power budget and signal fidelity, which govern fiber-optic system performance, are explained. The characteristics of isolated optoelectronic devices, which include bandwidths and noise, are described. Interaction of the characteristics of an optoelectronic source with the fiber-optic medium can limit the performance of the fiber-optic communications systems; these factors are examined. Modulation of light for signal transmission and the design constraints for fiber-optic transmitters and receivers because of modulation are discussed. The performance of the fiber-optic communications systems and the effect various optoelectronic devices and specifications have on the system's performance are considered. Analytical descriptions and quantitative examples of the phenomena reviewed are provided.

  2. Monoliths: special issue in a new package.

    PubMed

    Svec, Frantisek

    2013-08-01

    Regular special issues concerning monoliths have always been a stronghold of the Journal of Separation Science. Typically, we issued a call for papers, collected and processed the submitted manuscripts, and all of them were then printed in a single issue of the journal. This approach worked to a certain limit quite acceptably but there was always a longer waiting time between the early submissions and publication. This is why we decided to do it this year differently. I claimed in my 2013 New Years Editorial: "We are living in the electronic era! Why not to make an advantage of that?" And we do. As a result, all manuscript submitted for publication in the special issue Monoliths have already been published in regular issues as soon as they were accepted. The first page of these papers includes a footnote: "This paper is included in the virtual special issue Monoliths available at the Journal of Separation Science website." All papers published with this footnote were collected in a virtual special issue accessible through the internet. This concept ruled out possible delays in publication of contributions submitted early. Since we did not have any real "special issue", there was no need for any hard deadline for submission. We just collected manuscripts submitted for the special issue Monoliths published from January to July 2013 and included them in the virtual special issue. This new approach worked very well and we published 22 excellent papers that are included in the issue available now at this website: http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1615-9314/homepage/virtual_special_issue__monoliths.htm. PMID:23939823

  3. Ultralight amorphous silicon alloy photovoltaic modules for space applications

    NASA Technical Reports Server (NTRS)

    Hanak, J. J.; Chen, Englade; Fulton, C.; Myatt, A.; Woodyard, J. R.

    1987-01-01

    Ultralight and ultrathin, flexible, rollup monolithic PV modules have been developed consisting of multijunction, amorphous silicon alloys for either terrestrial or aerospace applications. The rate of progress in increasing conversion efficiency of stable multijunction and multigap PV cells indicates that arrays of these modules can be available for NASA's high power systems in the 1990's. Because of the extremely light module weight and the highly automated process of manufacture, the monolithic a-Si alloy arrays are expected to be strongly competitive with other systems for use in NASA's space station or in other large aerospace applications.

  4. Hybrid optoelectronic device with multiple bistable outputs

    NASA Astrophysics Data System (ADS)

    Costazo-Caso, Pablo A.; Jin, Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad

    2011-01-01

    Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

  5. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott; Lewis, Larry Neil; Cella, James Anthony; Shiang, Joseph John

    2011-11-08

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## wherein R.sup.1 and R.sup.2 are independently alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.5is H or CHO; R.sup.3 and R.sup.4 are independently hydrogen, alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.11 and R.sup.12 taken together form a substituted or unsubstituted monocyclic or bicyclic heteroaromatic ring; R.sup.13 is independently at each occurrence halo, nitro, hydroxy, amino, alkyl, aryl, arylalkyl, alkoxy, substituted alkoxy, substituted alkyl, substituted aryl, or substituted arylalkyl; Ar is aryl, heteroaryl, substituted aryl, substituted heteroaryl, or a combination thereof; X is selected from a direct bond, alky, substituted alkyl, and combinations thereof; Y is CHO or NH.sub.2; Z is CHO or NH.sub.2 where Z does not equal Y; and p is 0, 1 or 2. The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  6. Assessment of dental plaque by optoelectronic methods

    NASA Astrophysics Data System (ADS)

    Negrutiu, Meda-Lavinia; Sinescu, Cosmin; Bortun, Cristina Maria; Levai, Mihaela-Codrina; Topala, Florin Ionel; Crǎciunescu, Emanuela Lidia; Cojocariu, Andreea Codruta; Duma, Virgil Florin; Podoleanu, Adrian Gh.

    2016-03-01

    The formation of dental biofilm follows specific mechanisms of initial colonization on the surface, microcolony formation, development of organized three dimensional community structures, and detachment from the surface. The structure of the plaque biofilm might restrict the penetration of antimicrobial agents, while bacteria on a surface grow slowly and display a novel phenotype; the consequence of the latter is a reduced sensitivity to inhibitors. The aim of this study was to evaluate with different optoelectronic methods the morphological characteristics of the dental biofilm. The study was performed on samples from 25 patients aged between 18 and 35 years. The methods used in this study were Spectral Domain Optical Coherence Tomography (SD-OCT) working at 870 nm for in vivo evaluations and Scanning Electron Microscopy (SEM) for validations. For each patient a sample of dental biofilm was obtained directly from the vestibular surface of the teeth's. SD-OCT produced C- and B-scans that were used to generate three dimensional (3D) reconstructions of the sample. The results were compared with SEM evaluations. The biofilm network was dramatically destroyed after the professional dental cleaning. OCT noninvasive methods can act as a valuable tool for the 3D characterization of dental biofilms.

  7. Emissive polymeric materials for optoelectronic devices

    SciTech Connect

    Shiang, Joseph John; Chichak, Kelly Scott; Cella, James Anthony; Lewis, Larry Neil; Janora, Kevin Henry

    2011-07-05

    Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

  8. Image stabilization for SWIR advanced optoelectronic device

    NASA Astrophysics Data System (ADS)

    Schiopu, Paul; Manea, Adrian; Cristea, Ionica; Grosu, Neculai; Craciun, Anca-Ileana; Craciun, Alexandru; Granciu, Dana

    2015-02-01

    At long ranges and under low visibility conditions, Advanced Optoelectronic Device provides the signal-to-noise ratio and image quality in the Short-wave Infra-red - SWIR (wavelengths between 1,1 ÷2,5 μm), significantly better than in the near wave infrared - NWIR and visible spectral bands [1,2]. The quality of image is nearly independent of the polarization in the incoming light, but it is influenced by the relative movement between the optical system and the observer (the operators' handshake), and the movement towards the support system (land and air vehicles). All these make it difficult to detect objectives observation in real time. This paper presents some systems enhance which the ability of observation and sighting through the optical systems without the use of the stands, tripods or other means. We have to eliminate the effect of "tremors of the hands" and the vibration in order to allow the use of optical devices by operators on the moving vehicles on land, on aircraft, or on boats, and to provide additional comfort for the user to track the moving object through the optical system, without losing the control in the process of detection and tracking. The practical applications of stabilization image process, in SWIR, are the most advanced part of the optical observation systems available worldwide [3,4,5]. This application has a didactic nature, because it ensures understanding by the students about image stabilization and their participation in research.

  9. Optoelectronic devices incorporating fluoropolymer compositions for protection

    SciTech Connect

    Chen, Xuming; Chum, Pak-Wing S.; Howard, Kevin E.; Lopez, Leonardo C.; Sumner, William C.; Wu, Shaofu

    2015-12-22

    The fluoropolymer compositions of the present invention generally incorporate ingredients comprising one or more fluoropolymers, an ultraviolet light protection component (hereinafter UV protection component), and optionally one or more additional ingredients if desired. The UV protection component includes a combination of at least one hindered tertiary amine (HTA) compound having a certain structure and a weight average molecular weight of at least 1000. This tertiary amine is used in combination with at least one organic, UV light absorbing compound (UVLA compound) having a weight average molecular weight greater than 500. When the HTA compound and the UVLA compound are selected according to principles of the present invention, the UV protection component provides fluoropolymer compositions with significantly improved weatherability characteristics for protecting underlying materials, features, structures, components, and/or the like. In particular, fluoropolymer compositions incorporating the UV protection component of the present invention have unexpectedly improved ability to resist blackening, coloration, or other de gradation that may be caused by UV exposure. As a consequence, devices protected by these compositions would be expected to have dramatically improved service life. The compositions have a wide range of uses but are particularly useful for forming protective layers in optoelectronic devices.

  10. Software for Use with Optoelectronic Measuring Tool

    NASA Technical Reports Server (NTRS)

    Ballard, Kim C.

    2004-01-01

    A computer program has been written to facilitate and accelerate the process of measurement by use of the apparatus described in "Optoelectronic Tool Adds Scale Marks to Photographic Images" (KSC-12201). The tool contains four laser diodes that generate parallel beams of light spaced apart at a known distance. The beams of light are used to project bright spots that serve as scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The computer program is applicable to a scene that contains the laser spots and that has been imaged in a square pixel format that can be imported into a graphical user interface (GUI) generated by the program. It is assumed that the laser spots and the distance(s) to be measured all lie in the same plane and that the plane is perpendicular to the line of sight of the camera used to record the image

  11. Terahertz biochip based on optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lu, Ja-Yu; Chen, Li-Jin; Kao, Tzeng-Fu; Chang, Hsu-Hao; Liu, An-Shyi; Yu, Yi-Chun; Wu, Ruey-Beei; Liu, Wei-Sheng; Chyi, Jen-Inn; Pan, Ci-Ling; Tsai, Ming-Cheng; Sun, Chi-Kuang

    2005-10-01

    The accurate detection of minute amounts of chemical and biological substances has been a major goal in bioanalytical technology throughout the twentieth century. Fluorescence dye labeling detection remains the effective analysis method, but it modifies the surroundings of molecules and lowering the precision of detection. An alternative label free detecting tool with little disturbance of target molecules is highly desired. Theoretical calculations and experiments have demonstrated that many biomolecules have intrinsic resonance due to vibration or rotation level transitions, allowing terahertz (THz)-probing technique as a potential tool for the label-free and noninvasive detection of biomolecules. In this paper, we first ever combined the THz optoelectronic technique with biochip technology to realize THz biosensing. By transferring the edge-coupled photonic transmitter into a thin glass substrate and by integrating with a polyethylene based biochip channel, near field THz detection of the biomolecules is demonstrated. By directly acquiring the absorption micro-spectrum in the THz range, different boiomecules can then be identified according to their THz fingerprints. For preliminary studies, the capability to identity different illicit drug powders is successfully demonstrated. This novel biochip sensing system has the advantages including label-free detection, high selectivity, high sensitivity, ease for sample preparation, and ease to parallel integrate with other biochip functionality modules. Our demonstrated detection capability allows specifying various illicit drug powders with weight of nano-gram, which also enables rapid identification with minute amounts of other important molecules including DNA, biochemical agents in terrorism warfare, explosives, viruses, and toxics.

  12. Recent progress in opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute

    2005-01-01

    The optoelectronic oscillator (OEO) is a unique device based on photonics techniques to generate highly spectrally pure microwave signals [1]. The development of the OEO was motivated by the need for high performance oscillators in the frequency range larger than 10 GHz, where conventional electronic oscillators have a number of limitations. These limitations typically stem from the product of fQ, where f is the oscillator frequency and Q is the quality factor of the resonator in the oscillator. In conventional resonators, whether electromagnetic or piezoelectric, this product is usually a constant. Thus, as the oscillator frequency is pushed higher, the quality factor degrades, resulting in degradation of the phase noise of the oscillator. An approach to mitigate the problem is to start with a very high quality signal in the 5 to 100 MHz range generated by a quartz oscillator and multiply the frequency to achieve the desired microwave signal. Here again, frequency multiplication also results in an increase of the phase noise by a factor of 2010gN, where N is the multiplication factor.

  13. Colloidal quantum dot materials for infrared optoelectronics

    NASA Astrophysics Data System (ADS)

    Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.

    2015-09-01

    Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.

  14. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    DOEpatents

    Wang, Qingwu; Li, Wenguang; Jiang, Hua

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  15. Floating electrode optoelectronic tweezers: Light-driven dielectrophoretic droplet manipulation in electrically insulating oil medium

    NASA Astrophysics Data System (ADS)

    Park, Sungyong; Pan, Chenlu; Wu, Ting-Hsiang; Kloss, Christoph; Kalim, Sheraz; Callahan, Caitlin E.; Teitell, Michael; Chiou, Eric P. Y.

    2008-04-01

    We report an optical actuation mechanism, floating electrode optoelectronic tweezers (FEOET). FEOET enables light-driven transport of aqueous droplets immersed in electrically insulating oil on a featureless photoconductive glass layer with direct optical images. We demonstrate that a 681μm de-ionized water droplet immersed in corn oil medium is actuated by a 3.21μW laser beam with an average intensity as low as 4.08μW/mm2 at a maximum speed of 85.1μm/s on a FEOET device. FEOET provides a promising platform for massively parallel droplet manipulation with optical images on low cost, silicon-coated glass. The FEOET device structure, fabrication, working principle, numerical simulations, and operational results are presented in this letter.

  16. Smart-pixel spatial light modulator for incorporation in an optoelectronic neural network.

    PubMed

    Bar-Tana, I; Sharpe, J P; McKnight, D J; Johnson, K M

    1995-02-01

    We present the design, fabrication, and testing of a novel liquid-crystal-on-silicon optically addressed spatial light modulator for use as a weight matrix in an ART-1 optoelectronic neural processor. Each pixel in the 50 x 83 element array occupies 75 microm x 75 microm and consists of a photodetector, a threshold circuit, a 1-bit (flip-flop) memory element, and a liquid-crystal modulating mirror. The array is designed to switch all the pixels initially to the ON state. Subsequently each pixel is independently switched to the OFF state if a superthreshold amount of light falls upon the pixel's photodetector. The device has a contrast ratio of 20:1, a switch-on time (10-90% rise time) of 500 micros, and a switch-off time of ~500 micros (depending on the externally set threshold). Measured device uniformities and interpixel coupling are also described. PMID:19859168

  17. Nanocellulose-based Translucent Diffuser for Optoelectronic Device Applications with Dramatic Improvement of Light Coupling.

    PubMed

    Wu, Wei; Tassi, Nancy G; Zhu, Hongli; Fang, Zhiqiang; Hu, Liangbing

    2015-12-01

    Nanocellulose is a biogenerated and biorenewable organic material. Using a process based on 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO)/NaClO/NaBr system, a highly translucent and light-diffusive film consisting of many layers of nanocellulose fibers and wood pulp microfibers was made. The film demonstrates a combination of large optical transmittance of ∼90% and tunable diffuse transmission of up to ∼78% across the visible and near-infrared spectra. The detailed characterizations of the film indicate the combination of high optical transmittance and haze is due to the film's large packing density and microstructured surface. The superior optical properties make the film a translucent light diffuser and applicable for improving the efficiencies of optoelectronic devices such as thin-film silicon solar cells and organic light-emitting devices. PMID:26572592

  18. Integration of optoelectronic technologies for chip-to- chip interconnections and parallel pipeline processing

    NASA Astrophysics Data System (ADS)

    Wu, Jenming

    Digital information services such as multimedia systems and data communications require the processing and transfer of tremendous amount of data. These data need to be stored, accessed and delivered efficiently and reliably at high speed for various user applications. This represents a great challenge for current electronic systems. Electronics is effective in providing high performance processing and computation, but its input/outputs (I/Os) bandwidth is unable to scale with its processing power. The signal I/Os or interconnections are needed between processors and input devices, between processors for multiprocessor systems, and between processors and storage devices. Novel chip-to-chip interconnect technologies are needed to meet this challenge. This work integrates optoelectronic technologies for chip-to-chip interconnects and parallel pipeline processing. Photonic and electronic technologies are complementary to each other in the sense that electronics is more suitable for high-speed, low cost computation, and photonics is more suitable for high-bandwidth information transmission. Smart pixel technology uses electronics for logic switching and optics for chip-to- chip interconnects, thus combining the abilities of photonics and electronics nicely. This work describes both vertical and horizontal integration of smart pixel technologies for chip-to-chip optical interconnects and its applications. We present smart pixel VLSI designs in both hybrid CMOS/MQW smart pixel and monolithic GaAs smart pixel technologies. We use the CMOS/MQW technology for smart pixel array cellular logic (SPARCL) processors for SIMD parallel pipeline processing. We have tested the chip and constructed a prototype system for device characterization and system demonstration. We have verified the functionality of the system and characterized the electrical functions of the chip and the optoelectronic properties of the MQW devices. We have developed algorithms that utilize SPARCL for various

  19. Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors

    NASA Astrophysics Data System (ADS)

    Ruddell, F. H.; Suder, S. L.; Bain, M. F.; Montgomery, J. H.; Armstrong, B. M.; Gamble, H. S.; Denvir, D.; Casse, G.; Bowcock, T.; Allport, P. P.; Marczewski, J.; Kucharski, K.; Tomaszewski, D.; Niemiec, H.; Kucewicz, W.

    2008-12-01

    Silicon on insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100 V and average leakage current densities at 70 V were only 55 nA/cm 2. MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45 × 10 11 cm -2 for a dose of 2.7 Mrad.

  20. Assessments of Fracture Toughness of Monolithic Ceramics-SEPB Versus SEVNB Methods

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Gyekenyesi, John P.

    2006-01-01

    Fracture toughness of a total of 13 advanced monolithic ceramics including silicon nitrides, silicon carbide, aluminas, and glass ceramic was determined at ambient temperature by using both single edge precracked beam (SEPB) and single edge v-notched beam (SEVNB) methods. Relatively good agreement in fracture toughness between the two methods was observed for advanced ceramics with flat R-curves; whereas, poor agreement in fracture toughness was seen for materials with rising R-curves. The discrepancy in fracture toughness between the two methods was due to stable crack growth with crack closure forces acting in the wake region of cracks even in SEVNB test specimens. The effect of discrepancy in fracture toughness was analyzed in terms of microstructural feature (grain size and shape), toughening exponent in R-curve, and stable crack growth determined using back-face strain gaging.

  1. CD Reference Materials Fabricated on Monolithic 200 mm Wafers for Automated Metrology Tool Applications

    NASA Astrophysics Data System (ADS)

    Allen, Richard A.; Dixson, Ronald G.; Cresswell, Michael W.; Guthrie, William F.; Shulver, Byron J. R.; Bunting, A. S.; Stevenson, J. T. M.; Walton, Anthony J.

    2007-09-01

    Recently, prototype isolated-line, single-crystal critical dimension (CD) reference materials (SCCDRMs) with linewidths as narrow as 40 nm±1.5 nm have been reported. These reference materials, designated NIST Prototype Reference Material (RM) 8111, were configured as 10 mm by 11 mm silicon test chips mounted in 200 mm carrier wafers. The RM 8111 chips were fabricated using microelectromechanical (MEMS) process techniques, which assure the alignment of the sidewalls of the features to silicon (111) lattice planes, and were calibrated in a sequence involving atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) metrology. This paper reports initial results on SCCDRMs fabricated on 200 mm bulk wafers; this monolithic approach would eliminate the need for carrier wafers.

  2. FIBROUS MONOLITH WEAR RESISTANT COMPONENTS FOR THE MINING INDUSTRY

    SciTech Connect

    Mark J. Rigali

    2001-10-01

    Published mechanical and thermal properties data on a variety of materials was gathered, with focus on materials that have potential with respect to developing wear resistant and damage tolerant composite for mining industry applications. Preliminary core materials of interest include but are not limited to: Diamond, Tungsten Carbide and Cemented Tungsten Carbides, Carbides of Boron, Silicon, Titanium and Aluminum, Diboride of Titanium and Aluminum, Nitrides of Aluminum, Silicon, Titanium, and Boron, Aluminum Oxide, Tungsten, Titanium, Iron, Cobalt and Metal Alloys. Preliminary boundary materials of interest include but are not limited to: W metal, WC-Co, W-Co, WFeNi, and Mo metal and alloys. Several FM test coupons were fabricated with various compositions using the above listed materials. These coupons were consolidated to varying degrees by uniaxial hot pressing, then cut and ground to expose the FM cell structure. One promising system, WC-Co core and WFeNi boundary, was consolidated to 97% of theoretical density, and demonstrates excellent hardness. Data on standard mechanical tests was gathered, and tests will begin on the consolidated test coupons during the upcoming reporting period. The program statements of work for ACR Inc. and its subcontractors, as well as the final contract negotiations, were finalized during the current reporting period. The program start date was February 22nd, 2001. In addition to the current subcontractors, Kennametal Inc., a major manufacturer of cutting tools and wear resistant tooling for the mining industry, expressed considerable interest in ACR's Fibrous Monolith composites for both machine and mining applications. At the request of Kennametal, ARC Inc fabricated and delivered several Fibrous Monolith coupons and components for testing and evaluation in the mining and machine tool applications. Additional samples of Diamond/Tungsten Carbide-6%Cobalt Fibrous Monolith were fabricated and delivered for testing Kennametal's Rapid

  3. Photonic crystal cavities for spectrally-selective optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Yang, Hongjun

    Photonic crystal (PC) structures exhibit unconventional dispersion and refractive properties making possible hitherto not realizable optical and optoelectronic devices with high spectral selectivity. Functional PC devices (e.g., optical filters, reflectors, and photo detectors and light emitters) on both Si and III-V semiconductor material systems were fabricated via E-Beam lithography (EBL). The device layer can be further transferred onto foreign substrates such as glass or plastic (PET), using a low-cost "wet nanomembrane transfer technique" developed in this study. The broadband membrane reflectors (MR) based on Fano resonances in patterned silicon nanomembranes have been demonstrated. Resonance control of the reflectors was realized either by partially removing buried oxide layer underneath the device layer, or by controlled SiO2 film deposition on the top of the devices. Both blue- and red-shifts were demonstrated with a turning range of 50 nm for a center wavelength at 1550 nm. These results demonstrate practical post-process means for Fano resonance engineering for both narrow band filters and ultra-compact broadband reflectors. An optically pumped resonance cavity light emitting device (RCLED) with Si based membrane reflectors (MR) has been demonstrated experimentally. The stimulated cavity mode at 1545 nm was observed at room temperature with a pulsed green pumping laser light source. We observed significant spectral narrowing in RCLEDs with linewidth reduced from 50 nm down to <4 nm, owing to the presence of top and bottom MR reflectors. The measured photoluminescence efficiency also increased by a factor of 100 in RCLEDs, as compared to the value measured from as-grown InGaAsP QW structures on InP substrate. The mode shifts were also investigated over different temperatures and different pumping power levels. An InGaAsP QW LED array device was also fabricated and transferred onto flexible PET substrate. The devices showed very good electrical and

  4. Optoelectronic System Measures Distances to Multiple Targets

    NASA Technical Reports Server (NTRS)

    Liebe, Carl Christian; Abramovici, Alexander; Bartman, Randall; Chapsky, Jacob; Schmalz, John; Coste, Keith; Litty, Edward; Lam, Raymond; Jerebets, Sergei

    2007-01-01

    An optoelectronic metrology apparatus now at the laboratory-prototype stage of development is intended to repeatedly determine distances of as much as several hundred meters, at submillimeter accuracy, to multiple targets in rapid succession. The underlying concept of optoelectronic apparatuses that can measure distances to targets is not new; such apparatuses are commonly used in general surveying and machining. However, until now such apparatuses have been, variously, constrained to (1) a single target or (2) multiple targets with a low update rate and a requirement for some a priori knowledge of target geometry. When fully developed, the present apparatus would enable measurement of distances to more than 50 targets at an update rate greater than 10 Hz, without a requirement for a priori knowledge of target geometry. The apparatus (see figure) includes a laser ranging unit (LRU) that includes an electronic camera (photo receiver), the field of view of which contains all relevant targets. Each target, mounted at a fiducial position on an object of interest, consists of a small lens at the output end of an optical fiber that extends from the object of interest back to the LRU. For each target and its optical fiber, there is a dedicated laser that is used to illuminate the target via the optical fiber. The targets are illuminated, one at a time, with laser light that is modulated at a frequency of 10.01 MHz. The modulated laser light is emitted by the target, from where it returns to the camera (photodetector), where it is detected. Both the outgoing and incoming 10.01-MHz laser signals are mixed with a 10-MHz local-oscillator to obtain beat notes at 10 kHz, and the difference between the phases of the beat notes is measured by a phase meter. This phase difference serves as a measure of the total length of the path traveled by light going out through the optical fiber and returning to the camera (photodetector) through free space. Because the portion of the path

  5. Optoelectronic Sensor System for Guidance in Docking

    NASA Technical Reports Server (NTRS)

    Howard, Richard T.; Bryan, Thomas C.; Book, Michael L.; Jackson, John L.

    2004-01-01

    The Video Guidance Sensor (VGS) system is an optoelectronic sensor that provides automated guidance between two vehicles. In the original intended application, the two vehicles would be spacecraft docking together, but the basic principles of design and operation of the sensor are applicable to aircraft, robots, vehicles, or other objects that may be required to be aligned for docking, assembly, resupply, or precise separation. The system includes a sensor head containing a monochrome charge-coupled- device video camera and pulsed laser diodes mounted on the tracking vehicle, and passive reflective targets on the tracked vehicle. The lasers illuminate the targets, and the resulting video images of the targets are digitized. Then, from the positions of the digitized target images and known geometric relationships among the targets, the relative position and orientation of the vehicles are computed. As described thus far, the VGS system is based on the same principles as those of the system described in "Improved Video Sensor System for Guidance in Docking" (MFS-31150), NASA Tech Briefs, Vol. 21, No. 4 (April 1997), page 9a. However, the two systems differ in the details of design and operation. The VGS system is designed to operate with the target completely visible within a relative-azimuth range of +/-10.5deg and a relative-elevation range of +/-8deg. The VGS acquires and tracks the target within that field of view at any distance from 1.0 to 110 m and at any relative roll, pitch, and/or yaw angle within +/-10deg. The VGS produces sets of distance and relative-orientation data at a repetition rate of 5 Hz. The software of this system also accommodates the simultaneous operation of two sensors for redundancy

  6. Optoelectronic properties of hexagonal boron nitride epilayers

    NASA Astrophysics Data System (ADS)

    Cao, X. K.; Majety, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2013-01-01

    This paper summarizes recent progress primarily achieved in authors' laboratory on synthesizing hexagonal boron nitride (hBN) epilayers by metal organic chemical vapor deposition (MCVD) and studies of their structural and optoelectronic properties. The structural and optical properties of hBN epilayers have been characterized by x-ray diffraction (XRD) and photoluminescence (PL) studies and compared to the better understood wurtzite AIN epilayers with a comparable energy bandgap. These MOCVD grown hBN epilayers exhibit highly efficient band-edge PL emission lines centered at around 5.5 eVat room temperature. The band-edge emission of hBN is two orders of magnitude higher than that of high quality AlN epilayers. Polarization-resolved PL spectroscopy revealed that hEN epilayers are predominantly a surface emission material, in which the band-edge emission with electric field perpendicular to the c-axis (Eemi⊥c) is about 1.7 times stronger than the component along the c-axis (Eemillc). This is in contrast to AIN, in which the band­ edge emission is known to be polarized along the c-axis, (Eemillc). Based on the graphene optical absorption concept, the estimated band-edge absorption coefficient of hBN is about 7x105 cm-1, which is more than 3 times higher than the value for AlN (~2x105 cm-1 . The hBN epilayer based photodetectors exhibit a sharp cut-off wavelength around 230 nm, which coincides with the band-edge PL emission peak and virtually no responses in the long wavelengths. The dielectric strength of hBN epilayers exceeds that of AlN and is greater than 4.5 MV/cm based on the measured result for an hBN epilayer released from the host sapphire substrate.

  7. Toward high-resolution optoelectronic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Palanker, Daniel; Huie, Philip; Vankov, Alexander; Asher, Alon; Baccus, Steven

    2005-04-01

    It has been already demonstrated that electrical stimulation of retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. Current retinal implants provide very low resolution (just a few electrodes), while several thousand pixels are required for functional restoration of sight. We present a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array with pixel density up to 2,500 pix/mm2 (geometrically corresponding to a visual acuity of 20/80), and allows for natural eye scanning rather than scanning with a head-mounted camera. The system operates similarly to "virtual reality" imaging devices used in military and medical applications. An image from a video camera is projected by a goggle-mounted infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. Such a system provides a broad field of vision by allowing for natural eye scanning. The goggles are transparent to visible light, thus allowing for simultaneous utilization of remaining natural vision along with prosthetic stimulation. Optical control of the implant allows for simple adjustment of image processing algorithms and for learning. A major prerequisite for high resolution stimulation is the proximity of neural cells to the stimulation sites. This can be achieved with sub-retinal implants constructed in a manner that directs migration of retinal cells to target areas. Two basic implant geometries are described: perforated membranes and protruding electrode arrays. Possibility of the tactile neural stimulation is also examined.

  8. Semiselective Optoelectronic Sensors for Monitoring Microbes

    NASA Technical Reports Server (NTRS)

    Tabacco, Mary Beth; Chuang, Han; Taylor,Laura; Russo, Jaime

    2003-01-01

    Sensor systems are under development for use in real-time detection and quantitation of microbes in water without need for sampling. These systems include arrays of optical sensors; miniature, portable electronic data-acquisition circuits; and optoelectronic interfaces between the sensor arrays and data-acquisition circuits. These systems are intended for original use in long-term, inline monitoring of waterborne micro-organisms in water-reclamation systems aboard future spacecraft. They could also be adapted to similar terrestrial uses with respect to municipal water supplies, stored drinking water, and swimming water; for detecting low-level biological contamination in biotechnological, semiconductor, and pharmaceutical process streams; and in verifying the safety of foods and beverages. In addition, they could be adapted to monitoring of airborne microbes and of surfaces (e.g., to detect and/or quantitate biofilms). The designs of the sensors in these systems are based partly on those of sensors developed previously for monitoring airborne biological materials. The designs exploit molecular- recognition and fluorescence-spectroscopy techniques, such that in the presence of micro-organisms of interest, fluorescence signals change and the changes can be measured. These systems are characterized as semiselective because they respond to classes of micro-organisms and can be used to discriminate among the classes. This semiselectivity is a major aspect of the design: It is important to distinguish between (1) the principle of detection and quantitation of classes of micro-organisms by use of these sensors and (2) the principle of detection and quantitation of individual microbiological species by means of prior immuno-diagnostic and/or molecular-biology techniques. Detection of classes (in contradistinction to species) is particularly valuable when the exact nature of a contaminant is unknown.

  9. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    SciTech Connect

    Akhter, Perveen; Huang, Mengbing Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-03-28

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics.

  10. Biomimetic superelastic graphene-based cellular monoliths.

    PubMed

    Qiu, Ling; Liu, Jeffery Z; Chang, Shery L Y; Wu, Yanzhe; Li, Dan

    2012-01-01

    Many applications proposed for graphene require multiple sheets be assembled into a monolithic structure. The ability to maintain structural integrity upon large deformation is essential to ensure a macroscopic material which functions reliably. However, it has remained a great challenge to achieve high elasticity in three-dimensional graphene networks. Here we report that the marriage of graphene chemistry with ice physics can lead to the formation of ultralight and superelastic graphene-based cellular monoliths. Mimicking the hierarchical structure of natural cork, the resulting materials can sustain their structural integrity under a load of >50,000 times their own weight and can rapidly recover from >80% compression. The unique biomimetic hierarchical structure also provides this new class of elastomers with exceptionally high energy absorption capability and good electrical conductivity. The successful synthesis of such fascinating materials paves the way to explore the application of graphene in a self-supporting, structurally adaptive and 3D macroscopic form. PMID:23212370

  11. Comparison of soil-monolith extraction techniques

    NASA Astrophysics Data System (ADS)

    Meissner, R.; Rupp, H.; Weller, U.; Vogel, H.-J.

    2009-04-01

    In the international literature the term „lysimeter" is used for different objectives, e.g. suction cups, fluxmeters, etc. According to our understanding it belongs to the direct methods to measure water and solute fluxes in soil. Depending on the scientific task the shape and dimensions of the lysimeter as well as the type of filling (disturbed or undisturbed) and the specific instrumentation can be different. In any case where water dynamics or solute transport in natural soil is considered, lysimeters should be filled with 'undisturbed' monoliths which are large enough to contain the small scale heterogeneity of a site since flow and transport is highly sensitive to soil structure. Furthermore, lysimeters with vegetation should represent the natural crop inventory and the maximum root penetration depth should be taken into account. The aim of this contribution is to give an overview about different methods for obtaining undisturbed soil monoliths, in particular about i) techniques for the vertical and ii) for the horizontal extraction and iii) to evaluate the most frequently used procedures based on X-ray tomography images. Minimal disturbance of the soil monolith during extraction and subsequence filling of the lysimeter vessel is of critical importance for establishing flow and transport conditions corresponding approximately to natural field conditions. In the past, several methods were used to extract and fill lysimeter vessels vertically - including hand digging, employing sets of trihedral scaffold with lifting blocks and ballast, or using heavy duty excavators, which could shear and cut large blocks of soil. More recently, technologies have been developed to extract cylindrical soil monoliths by using ramming equipment or screw presses. One of the great disadvantages of the mentioned methods is the compaction or settling of soil that occurs during the "hammering" or "pressing". For this reason a new technology was developed, which cuts the outline of

  12. Monolithic Flexure Pre-Stressed Ultrasonic Horns

    NASA Technical Reports Server (NTRS)

    Sherrit, Stewart (Inventor); Bao, Xiaoqi (Inventor); Badescu, Mircea (Inventor); Bar-Cohen, Yoseph (Inventor); Allen, Phillip Grant (Inventor)

    2015-01-01

    A monolithic ultrasonic horn where the horn, backing, and pre-stress structures are combined in a single monolithic piece is disclosed. Pre-stress is applied by external flexure structures. The provision of the external flexures has numerous advantages including the elimination of the need for a pre-stress bolt. The removal of the pre-stress bolt eliminates potential internal electric discharge points in the actuator. In addition, it reduces the chances of mechanical failure in the actuator stacks that result from the free surface in the hole of conventional ring stacks. In addition, the removal of the stress bolt and the corresponding reduction in the overall number of parts reduces the overall complexity of the resulting ultrasonic horn actuator and simplifies the ease of the design, fabrication and integration of the actuator of the present invention into other structures.

  13. Monolithic Flexure Pre-Stressed Ultrasonic Horns

    NASA Technical Reports Server (NTRS)

    Sherrit, Stewart (Inventor); Bao, Xiaoqi (Inventor); Badescu, Mircea (Inventor); Bar-Cohen, Yoseph (Inventor); Allen, Phillip Grant (Inventor)

    2016-01-01

    A monolithic ultrasonic horn where the horn, backing, and pre-stress structures are combined in a single monolithic piece is disclosed. Pre-stress is applied by external flexure structures. The provision of the external flexures has numerous advantages including the elimination of the need for a pre-stress bolt. The removal of the pre-stress bolt eliminates potential internal electric discharge points in the actuator. In addition, it reduces the chances of mechanical failure in the actuator stacks that result from the free surface in the hole of conventional ring stacks. In addition, the removal of the stress bolt and the corresponding reduction in the overall number of parts reduces the overall complexity of the resulting ultrasonic horn actuator and simplifies the ease of the design, fabrication and integration of the actuator of the present invention into other structures.

  14. Monolithic solid oxide fuel cell development

    NASA Technical Reports Server (NTRS)

    Myles, K. M.; Mcpheeters, C. C.

    1989-01-01

    The feasibility of the monolithic solid oxide fuel cell (MSOFC) concept has been proven, and the performance has been dramatically improved. The differences in thermal expansion coefficients and firing shrinkages among the fuel cell materials have been minimized, thus allowing successful fabrication of the MSOFC with few defects. The MSOFC shows excellent promise for development into a practical power source for many applications from stationary power, to automobile propulsion, to space pulsed power.

  15. Monolithic microextraction tips by emulsion photopolymerization.

    PubMed

    Liang, Shih-Shin; Chen, Shu-Hui

    2009-03-20

    Monoliths formed by photopolymerization are excellent means for fabricating functional elements in miniaturized microdevices such as microextraction tips which are becoming important for sample preparation. Various silica-based and polymer-based materials have been used to fabricate monoliths with through pores of several nm to 4 microm. However, the back pressure created by such methods is still considered to be high for microtips that use suction forces to deliver the liquid. In this study, we demonstrated that emulsion techniques such as oil-in-water can be used to form monoliths with large through pores (>20 microm), and with rigid structures on small (10 microL) and large (200 microL) pipette tips by photopolymerization. We further showed that, with minor modifications, various functionalized particles (5-20 microm) can be added to form stable emulsions and successfully encapsulated into the monoliths for qualitative and quantitative solid-phase microextractions for a diverse application. Due to high permeability and large surface area, quick equilibration can be achieved by pipetting to yield high recovery rates. Using tryptic digests of ovalbumin as the standard, we obtained a recovery yield of 90-109% (RSD: 10-16%) with a loading capacity of 3 mug for desalting tips immobilized with C18 beads. Using tryptic digests of beta-casein and alpha-casein as standards, we showed that phosphopeptides were substantially enriched by tips immobilized with immobilized metal affinity chromatography or TiO(2) materials. Using estrogenic compounds as standards, we obtained a recovery yield of 95-108% (RSD: 10-12%) and linear calibration curves ranging from 5 to 100 ng (R(2)>0.99) for Waters Oasis HLB tips immobilized with hydrophilic beads. PMID:19203757

  16. FLUIDIZED BED STEAM REFORMER MONOLITH FORMATION

    SciTech Connect

    Jantzen, C

    2006-12-22

    Fluidized Bed Steam Reforming (FBSR) is being considered as an alternative technology for the immobilization of a wide variety of aqueous high sodium containing radioactive wastes at various DOE facilities in the United States. The addition of clay, charcoal, and a catalyst as co-reactants converts aqueous Low Activity Wastes (LAW) to a granular or ''mineralized'' waste form while converting organic components to CO{sub 2} and steam, and nitrate/nitrite components, if any, to N{sub 2}. The waste form produced is a multiphase mineral assemblage of Na-Al-Si (NAS) feldspathoid minerals with cage-like structures that atomically bond radionuclides like Tc-99 and anions such as SO{sub 4}, I, F, and Cl. The granular product has been shown to be as durable as LAW glass. Shallow land burial requires that the mineralized waste form be able to sustain the weight of soil overburden and potential intrusion by future generations. The strength requirement necessitates binding the granular product into a monolith. FBSR mineral products were formulated into a variety of monoliths including various cements, Ceramicrete, and hydroceramics. All but one of the nine monoliths tested met the <2g/m{sup 2} durability specification for Na and Re (simulant for Tc-99) when tested using the Product Consistency Test (PCT; ASTM C1285). Of the nine monoliths tested the cements produced with 80-87 wt% FBSR product, the Ceramicrete, and the hydroceramic produced with 83.3 wt% FBSR product, met the compressive strength and durability requirements for an LAW waste form.

  17. Fluidized Bed Steam Reformer (FBSR) monolith formation

    SciTech Connect

    Jantzen, C.M.

    2007-07-01

    Fluidized Bed Steam Reforming (FBSR) is being considered as an alternative technology for the immobilization of a wide variety of aqueous high sodium containing radioactive wastes at various DOE facilities in the United States. The addition of clay, charcoal, and a catalyst as co-reactants converts aqueous Low Activity Wastes (LAW) to a granular or 'mineralized' waste form while converting organic components to CO{sub 2} and steam, and nitrate/nitrite components, if any, to N{sub 2}. The waste form produced is a multiphase mineral assemblage of Na-Al-Si (NAS) feldspathoid minerals with cage-like structures that atomically bond radionuclides like Tc-99 and anions such as SO{sub 4}, I, F, and Cl. The granular product has been shown to be as durable as LAW glass. Shallow land burial requires that the mineralized waste form be able to sustain the weight of soil overburden and potential intrusion by future generations. The strength requirement necessitates binding the granular product into a monolith. FBSR mineral products were formulated into a variety of monoliths including various cements, Ceramicrete, and hydro-ceramics. All but one of the nine monoliths tested met the <2 g/m{sup 2} durability specification for Na and Re (simulant for Tc-99) when tested using the Product Consistency Test (PCT; ASTM C1285). Of the nine monoliths tested the cements produced with 80-87 wt% FBSR product, the Ceramicrete, and the hydro-ceramic produced with 83.3 wt% FBSR product, met the compressive strength and durability requirements for an LAW waste form. (authors)

  18. Update On Monolithic Fuel Fabrication Development

    SciTech Connect

    C. R Clark; J. M. Wight; G. C. Knighton; G. A. Moore; J. F. Jue

    2005-11-01

    Efforts to develop a viable monolithic research reactor fuel plate have continued at Idaho National Laboratory. These efforts have concentrated on both fabrication process refinement and scale-up to produce full sized fuel plates. Advancements have been made in the production of U-Mo foil including full sized foils. Progress has also been made in the friction stir welding and transient liquid phase bonding fabrication processes resulting in better bonding, more stable processes and the ability to fabricate larger fuel plates.

  19. Method for making monolithic metal oxide aerogels

    DOEpatents

    Droege, M.W.; Coronado, P.R.; Hair, L.M.

    1995-03-07

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The present invention is especially advantageous for making metal oxides other than silica that are prone to forming opaque, cracked aerogels. 6 figs.

  20. Monolithic 3D CMOS Using Layered Semiconductors.

    PubMed

    Sachid, Angada B; Tosun, Mahmut; Desai, Sujay B; Hsu, Ching-Yi; Lien, Der-Hsien; Madhvapathy, Surabhi R; Chen, Yu-Ze; Hettick, Mark; Kang, Jeong Seuk; Zeng, Yuping; He, Jr-Hau; Chang, Edward Yi; Chueh, Yu-Lun; Javey, Ali; Hu, Chenming

    2016-04-01

    Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications. PMID:26833783

  1. Method for making monolithic metal oxide aerogels

    DOEpatents

    Droege, Michael W.; Coronado, Paul R.; Hair, Lucy M.

    1995-01-01

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The present invention is especially advantageous for making metal oxides other than silica that are prone to forming opaque, cracked aerogels.

  2. Nanoporous Carbon Monoliths with Tunable Thermal Insulation and Mechanical Properties.

    PubMed

    Wang, Xiaopeng; Chen, Fenghua; Luo, Zhenhua; Li, Hao; Zhao, Tong

    2016-01-01

    In this work, nanoscale porous carbon monoliths, with excellent compressive strength and thermal insulation, were obtained with a simple method of carbonizing cured phenol-formaldehyde resin/poly(methyl methacrylate) blends. Apparent density, pore size and morphology of the carbon monoliths were tailored by changing the composition, curing process and carbonization temperature. The continuous nanopores played a key role in enhancing mechanical and thermal performance of the carbon materials. When PMMA concentration was 25%, apparent density and thermal conductivity of the nanoporous carbonaceous monoliths were obtained as low as 1.07 g · cm⁻³ and 0.42 W/(m · K), decreasing by 29.4% and 35.4% than that of carbonaceous monoliths obtained from pure PF; while compressive strength of the nanoporous carbonaceous monoliths was as high as 34 MPa, which was improved over five times than that of pure PF carbon monoliths. PMID:27398592

  3. Nanoporous Carbon Monoliths with Tunable Thermal Insulation and Mechanical Properties.

    PubMed

    Wang, Xiaopeng; Chen, Fenghua; Luo, Zhenhua; Li, Hao; Zhao, Tong

    2016-01-01

    In this work, nanoscale porous carbon monoliths, with excellent compressive strength and thermal insulation, were obtained with a simple method of carbonizing cured phenol-formaldehyde resin/poly(methyl methacrylate) blends. Apparent density, pore size and morphology of the carbon monoliths were tailored by changing the composition, curing process and carbonization temperature. The continuous nanopores played a key role in enhancing mechanical and thermal performance of the carbon materials. When PMMA concentration was 25%, apparent density and thermal conductivity of the nanoporous carbonaceous monoliths were obtained as low as 1.07 g · cm⁻³ and 0.42 W/(m · K), decreasing by 29.4% and 35.4% than that of carbonaceous monoliths obtained from pure PF; while compressive strength of the nanoporous carbonaceous monoliths was as high as 34 MPa, which was improved over five times than that of pure PF carbon monoliths.

  4. Less common applications of monoliths III. Gas chromatography

    PubMed Central

    Svec, Frantisek; Kurganov, Alexander A.

    2008-01-01

    Porous polymer monoliths emerged about two decades ago. Despite this short time, they are finding applications in a variety of fields. In addition to the most common and certainly best known use of this new category of porous media as stationary phases in liquid chromatography, monolithic materials also found their applications in other areas. This review article focuses on monoliths in capillaries designed for separations in gas chromatography. PMID:17645884

  5. Bioengineered Silicon Diatoms: Adding Photonic Features to a Nanostructured Semiconductive Material for Biomolecular Sensing

    NASA Astrophysics Data System (ADS)

    Rea, Ilaria; Terracciano, Monica; Chandrasekaran, Soundarrajan; Voelcker, Nicolas H.; Dardano, Principia; Martucci, Nicola M.; Lamberti, Annalisa; De Stefano, Luca

    2016-09-01

    Native diatoms made of amorphous silica are first converted into silicon structures via magnesiothermic process, preserving the original shape: electron force microscopy analysis performed on silicon-converted diatoms demonstrates their semiconductor behavior. Wet surface chemical treatments are then performed in order to enhance the photoluminescence emission from the resulting silicon diatoms and, at the same time, to allow the immobilization of biological probes, namely proteins and antibodies, via silanization. We demonstrate that light emission from semiconductive silicon diatoms can be used for antibody-antigen recognition, endorsing this material as optoelectronic transducer.

  6. Bioengineered Silicon Diatoms: Adding Photonic Features to a Nanostructured Semiconductive Material for Biomolecular Sensing.

    PubMed

    Rea, Ilaria; Terracciano, Monica; Chandrasekaran, Soundarrajan; Voelcker, Nicolas H; Dardano, Principia; Martucci, Nicola M; Lamberti, Annalisa; De Stefano, Luca

    2016-12-01

    Native diatoms made of amorphous silica are first converted into silicon structures via magnesiothermic process, preserving the original shape: electron force microscopy analysis performed on silicon-converted diatoms demonstrates their semiconductor behavior. Wet surface chemical treatments are then performed in order to enhance the photoluminescence emission from the resulting silicon diatoms and, at the same time, to allow the immobilization of biological probes, namely proteins and antibodies, via silanization. We demonstrate that light emission from semiconductive silicon diatoms can be used for antibody-antigen recognition, endorsing this material as optoelectronic transducer. PMID:27637897

  7. Monolithic fuel cell based power source for sprint power generation

    NASA Astrophysics Data System (ADS)

    Fee, D. C.; Busch, D. E.; Dees, D. W.; Dusek, J.; Easler, T. E.; Ellingson, W. A.; Flandermeyer, B. K.; Fousek, R. J.; Heiberger, J. J.; Majumdar, S.

    A unique fuel cell (monolith) coupled with a low power nuclear reactor presents an attractive approach for SDI burst power requirements. The high power, long duration bursts, appear achievable within a single shuttle launch limitation with appropriate development of the concept. The feasibility of the monolithic fuel cell concept has been demonstrated. Small arrays (stacks) of the monolithic design have been operated for hundreds of hours. The challenge is to improve the fabrication technology so that larger array of the monolithic design can be operated.

  8. Consolidation and densification methods for fibrous monolith processing

    DOEpatents

    Sutaria, Manish P.; Rigali, Mark J.; Cipriani, Ronald A.; Artz, Gregory J.; Mulligan, Anthony C.

    2004-05-25

    Methods for consolidation and densification of fibrous monolith composite structures are provided. Consolidation and densification of two- and three-dimensional fibrous monolith components having complex geometries can be achieved by pressureless sintering. The fibrous monolith composites are formed from filaments having at least a first material composition generally surrounded by a second material composition. The composites are sintered in an inert gas or nitrogen gas at a pressure of no more than about 30 psi to provide consolidated and densified fibrous monolith composites.

  9. Less common applications of monoliths: Preconcentration andsolid-phase extraction

    SciTech Connect

    Svec, Frantisek

    2006-03-27

    Monolithic materials are finding their place in a variety of fields. While liquid chromatography is the most emphasized use of this new category of porous media, some other just as important applications are eclipsed by the success of monolithic columns. This review article describes all current facets of use of monoliths in preconcentration and solid-phase extraction. In addition to the typical off line use that does not seem to be the main stream application for the monolithic materials, in-line connection of the preconcentration with HPLC, electrochromatography, electrophoresis, enzymatic digestion, as well as its applications in microfluidics are presented.

  10. Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications.

    PubMed

    Yu, Hyeonggeun; Dong, Zhipeng; Guo, Jing; Kim, Doyoung; So, Franky

    2016-04-27

    Direct integration of a vertical organic field-effect transistor (VOFET) and an optoelectronic device offers a single stacked, low power optoelectronic VOFET with high aperture ratios. However, a functional optoelectronic VOFET could not be realized because of the difficulty in fabricating transparent source and gate electrodes. Here, we report a VOFET with an on/off ratio up to 10(5) as well as output current saturation by fabricating a transparent gate capacitor consisting of a perforated indium tin oxide (ITO) source electrode, HfO2 gate dielectric, and ITO gate electrode. Effects of the pore size and the pore depth within the porous ITO electrodes on the on/off characteristic of a VOFET are systematically explained in this work. By combining a phosphorescent organic light-emitting diode with an optimized VOFET structure, a vertical organic light-emitting transistor with a luminance on/off ratio of 10(4) can be fabricated.

  11. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOEpatents

    Shtein, Max; Yang, Fan; Forrest, Stephen R.

    2008-10-14

    A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

  12. Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications.

    PubMed

    Yu, Hyeonggeun; Dong, Zhipeng; Guo, Jing; Kim, Doyoung; So, Franky

    2016-04-27

    Direct integration of a vertical organic field-effect transistor (VOFET) and an optoelectronic device offers a single stacked, low power optoelectronic VOFET with high aperture ratios. However, a functional optoelectronic VOFET could not be realized because of the difficulty in fabricating transparent source and gate electrodes. Here, we report a VOFET with an on/off ratio up to 10(5) as well as output current saturation by fabricating a transparent gate capacitor consisting of a perforated indium tin oxide (ITO) source electrode, HfO2 gate dielectric, and ITO gate electrode. Effects of the pore size and the pore depth within the porous ITO electrodes on the on/off characteristic of a VOFET are systematically explained in this work. By combining a phosphorescent organic light-emitting diode with an optimized VOFET structure, a vertical organic light-emitting transistor with a luminance on/off ratio of 10(4) can be fabricated. PMID:27082815

  13. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    SciTech Connect

    Dinetta, L.C.; Hannon, M.H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products.

  14. Plasmonic and silicon spherical nanoparticle antireflective coatings

    PubMed Central

    Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.

    2016-01-01

    Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes. PMID:26926602

  15. Hybrid III-V/silicon lasers

    NASA Astrophysics Data System (ADS)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  16. Plasmonic and silicon spherical nanoparticle antireflective coatings.

    PubMed

    Baryshnikova, K V; Petrov, M I; Babicheva, V E; Belov, P A

    2016-01-01

    Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes. PMID:26926602

  17. Growth and fabrication of gallium nitride and indium gallium nitride-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Berkman, Erkan Acar

    In this study, heteroepitaxial growth of III-Nitrides was performed by metalorganic chemical vapor deposition (MOCVD) technique on (0001) Al 2O3 substrates to develop GaN and InxGa1-x N based optoelectronic devices. Comprehensive experimental studies on emission and relaxation mechanisms of InxGa1-xN quantum wells (QWs) and InxGa 1-xN single layers were performed. The grown films were characterized by x-ray diffraction (XRD), Hall Effect measurements, photoluminescence measurements (PL) and transmission electron microscopy (TEM). An investigation on the effect of number and width of QWs on PL emission properties of InxGa 1-xN single QWs and multi-quantum wells (MQW) was conducted. The experimental results were explained by the developed theoretical bandgap model. The study on the single layer InxGa1-xN films within and beyond critical layer thickness (CLT) demonstrated that thick InxGa 1-xN films display simultaneous presence of strained and (partially) relaxed layers. The In incorporation into the lattice was observed to be dependent on the strain state of the film. The findings on InxGa1-xN QWs and single layers were implemented in the development of InxGa1-xN based LEDs and photodiodes, respectively. The as-grown samples were fabricated using conventional lithography techniques into various optoelectronic devices including long wavelength LEDs, dichromatic monolithic white LEDs, and p-i-n photodiodes. Emission from InxGa1-xN/GaN MQW LEDs at wavelengths as long as 625nm was demonstrated. This is one of the longest peak emission wavelengths reported for MOCVD grown InxGa1-xN MQW structures. Dichromatic white emission in LEDs was realized by utilizing two InGaN MQW active regions emitting at complementary wavelengths. InGaN p-i-n photodiodes operating at various regions of the visible spectrum tailored by the i-layer properties were developed. This was achieved by the novel approach of employing InxGa1-xN in all layers of the p-i-n photodiodes, enabling nearly

  18. a Study of Erbium Doped Iii-V Semiconductors for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Sethi, Sanjay

    1995-11-01

    This dissertation presents work done on materials and novel devices made with MBE-grown Er-doped III-V semiconductors for optoelectronic applications. Optically-excited Er ^{3+} in insulating materials exhibits optical emission chiefly around 1.54 mum, in the range of minimum loss in silica fiber. It was thought, therefore, that an electrically -pumped Er-doped semiconductor laser would find great applicability in fiber-optic communication systems. Exhaustive photoluminescence (PL) characterization was conducted on the entire gamut of As-based III-V semiconductors doped with Er, on bulk as well as quantum-well structures. We did not observe any Er-related PL emission at 1.54 μm for any of the materials/structures studied, a phenomenon which renders impractical the realization of an Er-doped III-V semiconductor laser. Deep level transient spectroscopy studies were performed on GaAs and AlGaAs co-doped with Er and Si to investigate the presence of any Er-related deep levels. The lack of band-edge luminescence in the GaAs:Er films led us to perform carrier-lifetime measurements by electro-optic sampling of photoconductive transients generated in these films. We discovered lifetimes in the picosecond regime, tunable by varying the Er concentration in the films. We also found the films to be highly resistive, the resistivity increasing with increasing Er-concentration. Intensive structural characterization (Double -crystal X-ray and TEM) performed by us on GaAs:Er epilayers indicates the presence of high-density nanometer-sized ErAs precipitates in MBE-grown GaAs:Er. These metallic nanoprecipitates probably form internal Schottky barriers within the GaAs matrix, which give rise to Shockley-Read -Hall recombination centers, thus accounting for both the high resistivities and the ultrashort carrier lifetimes. Optoelectronic devices fabricated included novel tunable (in terms of speed and responsivity) high-speed metal-semiconductor-metal (MSM) photodiodes made with Ga

  19. Optoelectronic Infrastructure for Radio Frequency and Optical Phased Arrays

    NASA Technical Reports Server (NTRS)

    Cai, Jianhong

    2015-01-01

    Optoelectronic integrated circuits offer radiation-hardened solutions for satellite systems in addition to improved size, weight, power, and bandwidth characteristics. ODIS, Inc., has developed optoelectronic integrated circuit technology for sensing and data transfer in phased arrays. The technology applies integrated components (lasers, amplifiers, modulators, detectors, and optical waveguide switches) to a radio frequency (RF) array with true time delay for beamsteering. Optical beamsteering is achieved by controlling the current in a two-dimensional (2D) array. In this project, ODIS integrated key components to produce common RF-optical aperture operation.

  20. Applications of HTSC films in hybrid optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Pavuna, Davor

    1992-03-01

    An overview is given of potential applications of high-Tc superconductors (HTSC) in the context of hybrid optoelectronic technology. The main requirements are described for the in situ growth of epitaxial YBa2Cu3O(7-delta) (YBCO) films on SrTiO3 and discuss the properties of YBCO layers grown on Si and GaAs substrates with intermediate, conducting indium-tin-oxide buffer layers. The performances of the microbridge and the meander type of HTSC bolometer are compared, and several concepts are discussed that may become relevant for future hybrid optoelectronic technology.

  1. Selective oxidation of cyclohexene through gold functionalized silica monolith microreactors

    NASA Astrophysics Data System (ADS)

    Alotaibi, Mohammed T.; Taylor, Martin J.; Liu, Dan; Beaumont, Simon K.; Kyriakou, Georgios

    2016-04-01

    Two simple, reproducible methods of preparing evenly distributed Au nanoparticle containing mesoporous silica monoliths are investigated. These Au nanoparticle containing monoliths are subsequently investigated as flow reactors for the selective oxidation of cyclohexene. In the first strategy, the silica monolith was directly impregnated with Au nanoparticles during the formation of the monolith. The second approach was to pre-functionalize the monolith with thiol groups tethered within the silica mesostructure. These can act as evenly distributed anchors for the Au nanoparticles to be incorporated by flowing a Au nanoparticle solution through the thiol functionalized monolith. Both methods led to successfully achieving even distribution of Au nanoparticles along the length of the monolith as demonstrated by ICP-OES. However, the impregnation method led to strong agglomeration of the Au nanoparticles during subsequent heating steps while the thiol anchoring procedure maintained the nanoparticles in the range of 6.8 ± 1.4 nm. Both Au nanoparticle containing monoliths as well as samples with no Au incorporated were tested for the selective oxidation of cyclohexene under constant flow at 30 °C. The Au free materials were found to be catalytically inactive with Au being the minimum necessary requirement for the reaction to proceed. The impregnated Au-containing monolith was found to be less active than the thiol functionalized Au-containing material, attributable to the low metal surface area of the Au nanoparticles. The reaction on the thiol functionalized Au-containing monolith was found to depend strongly on the type of oxidant used: tert-butyl hydroperoxide (TBHP) was more active than H2O2, likely due to the thiol induced hydrophobicity in the monolith.

  2. Three-Dimensional Assembly of Yttrium Oxide Nanosheets into Luminescent Aerogel Monoliths with Outstanding Adsorption Properties.

    PubMed

    Cheng, Wei; Rechberger, Felix; Niederberger, Markus

    2016-02-23

    The preparation of macroscopic materials from two-dimensional nanostructures represents a great challenge. Restacking and random aggregation to dense structures during processing prevents the preservation of the two-dimensional morphology of the nanobuilding blocks in the final body. Here we present a facile solution route to ultrathin, crystalline Y2O3 nanosheets, which can be assembled into a 3D network by a simple centrifugation-induced gelation method. The wet gels are converted into aerogel monoliths of macroscopic dimensions via supercritical drying. The as-prepared, fully crystalline Y2O3 aerogels show high surface areas of up to 445 m(2)/g and a very low density of 0.15 g/cm(3), which is only 3% of the bulk density of Y2O3. By doping and co-doping the Y2O3 nanosheets with Eu(3+) and Tb(3+), we successfully fabricated luminescent aerogel monoliths with tunable color emissions from red to green under UV excitation. Moreover, the as-prepared gels and aerogels exhibit excellent adsorption capacities for organic dyes in water without losing their structural integrity. For methyl blue we measured an unmatched adsorption capacity of 8080 mg/g. Finally, the deposition of gold nanoparticles on the nanosheets gave access to Y2O3-Au nanocomposite aerogels, proving that this approach may be used for the synthesis of catalytically active materials. The broad range of properties including low density, high porosity, and large surface area in combination with tunable photoluminescence makes these Y2O3 aerogels a truly multifunctional material with potential applications in optoelectronics, wastewater treatment, and catalysis. PMID:26756944

  3. Three-Dimensional Assembly of Yttrium Oxide Nanosheets into Luminescent Aerogel Monoliths with Outstanding Adsorption Properties.

    PubMed

    Cheng, Wei; Rechberger, Felix; Niederberger, Markus

    2016-02-23

    The preparation of macroscopic materials from two-dimensional nanostructures represents a great challenge. Restacking and random aggregation to dense structures during processing prevents the preservation of the two-dimensional morphology of the nanobuilding blocks in the final body. Here we present a facile solution route to ultrathin, crystalline Y2O3 nanosheets, which can be assembled into a 3D network by a simple centrifugation-induced gelation method. The wet gels are converted into aerogel monoliths of macroscopic dimensions via supercritical drying. The as-prepared, fully crystalline Y2O3 aerogels show high surface areas of up to 445 m(2)/g and a very low density of 0.15 g/cm(3), which is only 3% of the bulk density of Y2O3. By doping and co-doping the Y2O3 nanosheets with Eu(3+) and Tb(3+), we successfully fabricated luminescent aerogel monoliths with tunable color emissions from red to green under UV excitation. Moreover, the as-prepared gels and aerogels exhibit excellent adsorption capacities for organic dyes in water without losing their structural integrity. For methyl blue we measured an unmatched adsorption capacity of 8080 mg/g. Finally, the deposition of gold nanoparticles on the nanosheets gave access to Y2O3-Au nanocomposite aerogels, proving that this approach may be used for the synthesis of catalytically active materials. The broad range of properties including low density, high porosity, and large surface area in combination with tunable photoluminescence makes these Y2O3 aerogels a truly multifunctional material with potential applications in optoelectronics, wastewater treatment, and catalysis.

  4. Integration of active materials with silicon micromachining: applications to optical MEMS

    NASA Astrophysics Data System (ADS)

    Gouy, Jean-Philippe; Arakawa, Yasuhiko; Fujita, Hiroyuki

    2001-11-01

    Most of the MOEMS including optical switches and micro optical benches are developed on silicon. As for the MEMS, the main reason is that silicon has consistently been the material of choice for the microelectronics industry, due to a mature processing technology which offers the possibility to integrate MEMS devices with Integrated Circuits in a low cost batch fabrication process. However, since the beginning of Optoelectronic, silicon has been suffering from its poor efficiency to emit light because of its indirect band gap. Optical active devices can be integrated on silicon by combining specific active materials in order to keep the main advantage of silicon micromachining for MOEMS applications. This paper illustrates this purpose through one project developed in the frame of the LIMMS, joint laboratory between France and Japan. This project deals with optical active devices for which silicon micromachining technology has been employed to fabricate an organic semiconductors based light emitted diode on silicon substrate.

  5. Silicon spintronics.

    PubMed

    Jansen, Ron

    2012-04-23

    Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

  6. Soluble phthalocyanine silicone plastics and elastomers for nonlinear optics

    NASA Astrophysics Data System (ADS)

    Dirk, Carl W.; Bao, Jiemin; Kuzyk, Mark G.; Poga, Constantina

    1994-09-01

    We present a procedure for trivially preparing soluble, spinnable phthalocyanine plastics and elastomers containing high concentrations of silicon phthalocyanine incorporated as a copolymer. Polymers prepared by this method can easily be fashioned as thin films for optoelectronic applications. We present a visible broad band quadratic electroabsorption measurement on one such thin film, providing the real and imaginary components of (gamma) as well as the figure of merit Re[(gamma) ]/Im[(alpha) ].

  7. Monolithic aerogels with nanoporous crystalline phases

    NASA Astrophysics Data System (ADS)

    Daniel, Christophe; Guerra, Gaetano

    2015-05-01

    High porosity monolithic aerogels with nanoporous crystalline phases can be obtained from syndiotactic polystyrene and poly(2,6-dimethyl-1,4-phenylene)oxide thermoreversible gels by removing the solvent with supercritical CO2. The presence of crystalline nanopores in the aerogels based on these polymers allows a high uptake associated with a high selectivity of volatile organic compounds from vapor phase or aqueous solutions even at very low activities. The sorption and the fast kinetics make these materials particularly suitable as sorption medium to remove traces of pollutants from water and moist air.

  8. Monolithic LTCC seal frame and lid

    DOEpatents

    Krueger, Daniel S.; Peterson, Kenneth A.; Stockdale, Dave; Duncan, James Brent; Riggs, Bristen

    2016-06-21

    A method for forming a monolithic seal frame and lid for use with a substrate and electronic circuitry comprises the steps of forming a mandrel from a ceramic and glass based material, forming a seal frame and lid block from a ceramic and glass based material, creating a seal frame and lid by forming a compartment and a plurality of sidewalls in the seal frame and lid block, placing the seal frame and lid on the mandrel such that the mandrel fits within the compartment, and cofiring the seal frame and lid block.

  9. Method of fabricating a monolithic solid oxide fuel cell

    DOEpatents

    Minh, N.Q.; Horne, C.R.

    1994-03-01

    In a two-step densifying process of making a monolithic solid oxide fuel cell, a limited number of anode-electrolyte-cathode cells separated by an interconnect layer are formed and partially densified. Subsequently, the partially densified cells are stacked and further densified to form a monolithic array. 10 figures.

  10. Method of fabricating a monolithic solid oxide fuel cell

    DOEpatents

    Minh, Nguyen Q.; Horne, Craig R.

    1994-01-01

    In a two-step densifying process of making a monolithic solid oxide fuel cell, a limited number of anode-electrolyte-cathode cells separated by an interconnect layer are formed and partially densified. Subsequently, the partially densified cells are stacked and further densified to form a monolithic array.

  11. Fibrous monoliths: Economic ceramic matrix composites from powders [Final report

    SciTech Connect

    Rigali, Mark; Sutaria, Manish; Mulligan, Anthony; Creegan, Peter; Cipriani, Ron

    1999-05-26

    The project was to develop and perform pilot-scale production of fibrous monolith composites. The principal focus of the program was to develop damage-tolerant, wear-resistant tooling for petroleum drilling applications and generate a basic mechanical properties database on fibrous monolith composites.

  12. [Applications of polymeric monoliths in separation of bio-macromolecules].

    PubMed

    Bai, Ligai; Niu, Wenjing; Yang, Gengliang

    2013-04-01

    In recent years, the applications of high performance liquid chromatographic polymeric monoliths in the separation of macromolecules have been developed. In the review, the characters and new developments of bio-macromolecules separation by using the polymeric monoliths, combining with the works in our laboratory are summarized. Moreover, related influential reports are referred.

  13. Creating deep soil core monoliths: Beyond the solum

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Soil monoliths serve as useful teaching aids in the study of the Earth’s critical zone where rock, soil, water, air, and organisms interact. Typical monolith preparation has so far been confined to the 1 to 2-m depth of the solum. Critical ecosystem services provided by soils include materials from ...

  14. Catalytic Ignition and Upstream Reaction Propagation in Monolith Reactors

    NASA Technical Reports Server (NTRS)

    Struk, Peter M.; Dietrich, Daniel L.; Miller, Fletcher J.; T'ien, James S.

    2007-01-01

    Using numerical simulations, this work demonstrates a concept called back-end ignition for lighting-off and pre-heating a catalytic monolith in a power generation system. In this concept, a downstream heat source (e.g. a flame) or resistive heating in the downstream portion of the monolith initiates a localized catalytic reaction which subsequently propagates upstream and heats the entire monolith. The simulations used a transient numerical model of a single catalytic channel which characterizes the behavior of the entire monolith. The model treats both the gas and solid phases and includes detailed homogeneous and heterogeneous reactions. An important parameter in the model for back-end ignition is upstream heat conduction along the solid. The simulations used both dry and wet CO chemistry as a model fuel for the proof-of-concept calculations; the presence of water vapor can trigger homogenous reactions, provided that gas-phase temperatures are adequately high and there is sufficient fuel remaining after surface reactions. With sufficiently high inlet equivalence ratio, back-end ignition occurs using the thermophysical properties of both a ceramic and metal monolith (coated with platinum in both cases), with the heat-up times significantly faster for the metal monolith. For lower equivalence ratios, back-end ignition occurs without upstream propagation. Once light-off and propagation occur, the inlet equivalence ratio could be reduced significantly while still maintaining an ignited monolith as demonstrated by calculations using complete monolith heating.

  15. Role of electron and hole transport processes in conductivity and light emission of silicon nanocrystals field-effect transistors

    NASA Astrophysics Data System (ADS)

    Cattoni, Laura; Tengattini, Andrea; Anopchenko, Aleksei; Ramırez, Joan Manel; Ferrarese Lupi, Federico; Berencen, Yonder; Garrido, Blas; Fedeli, Jean-Marc; Pavesi, Lorenzo

    2013-02-01

    In this work, the optoelectronic properties of silicon light emitting field-effect transistors (LEFETs) have been investigated. The devices have been fabricated with silicon nanocrystals in the gate oxide and a semitransparent polycrystalline silicon gate. We compare the properties of LEFET with a more conventional MOS-LED (two-terminal light-emitting capacitor) with the same active material. The ~45 nm thick gate siliconrich oxide is deposited in a size-controlled multilayer geometry by low pressure chemical vapor deposition using standard microelectronic processes in a CMOS line. The multilayer stack is formed by layers of silicon oxide and silicon rich silicon oxide. The nanocrystal size and the tunneling barrier width are controlled by the thickness of silicon-rich silicon oxide and stochiometric silicon oxide layers, respectively. The silicon nanocrystals have been characterized by means of spectrally and time resolved photoluminescence, high resolution TEM, and x-ray photoelectron spectroscopy. Resistivity of the devices, capacitance, and electroluminescence under direct and pulsed injection current scheme have been studied and here reported. The optical power density and the external quantum efficiency of the LEFETs will be compared with the MOSLED results. This study will help to develop practical optoelectronic and photonic devices via accurate modeling and engineering of charge transport and exciton recombination in silicon nanocrystal arrays.

  16. Preparation of polyhedral oligomeric silsesquioxane based imprinted monolith.

    PubMed

    Li, Fang; Chen, Xiu-Xiu; Huang, Yan-Ping; Liu, Zhao-Sheng

    2015-12-18

    Polyhedral oligomeric silsesquioxane (POSS) was successfully applied, for the first time, to prepare imprinted monolithic column with high porosity and good permeability. The imprinted monolithic column was synthesized with a mixture of PSS-(1-Propylmethacrylate)-heptaisobutyl substituted (MA 0702), naproxon (template), 4-vinylpyridine, and ethylene glycol dimethacrylate, in ionic liquid 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM]BF4). The influence of synthesis parameters on the retention factor and imprinting effect, including the amount of MA 0702, the ratio of template to monomer, and the ratio of monomer to crosslinker, was investigated. The greatest imprinting factor on the imprinted monolithic column prepared with MA 0702 was 22, about 10 times higher than that prepared in absence of POSS. The comparisons between MIP monoliths synthesized with POSS and without POSS were made in terms of permeability, column efficiency, surface morphology and pore size distribution. In addition, thermodynamic and Van Deemter analysis were used to evaluate the POSS-based MIP monolith.

  17. Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires.

    PubMed

    Léonard, François; Song, Erdong; Li, Qiming; Swartzentruber, Brian; Martinez, Julio A; Wang, George T

    2015-12-01

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

  18. The Use of Opto-Electronics in Viscometry.

    ERIC Educational Resources Information Center

    Mazza, R. J.; Washbourn, D. H.

    1982-01-01

    Describes a semi-automatic viscometer which incorporates a microprocessor system and uses optoelectronics to detect flow of liquid through the capillary, flow time being displayed on a timer with accuracy of 0.01 second. The system could be made fully automatic with an additional microprocessor circuit and inclusion of a pump. (Author/JN)

  19. Stabilizing an optoelectronic microwave oscillator with photonic filters

    NASA Technical Reports Server (NTRS)

    Strekalov, D.; Aveline, D.; Yu, N.; Thompson, R.; Matsko, A. B.; Maleki, L.

    2003-01-01

    This paper compares methods of active stabilization of an optoelectronic microwave oscillator (OEO) based on insertion of a source of optical group delay into an OEO loop. The performance of an OEO stabilized with either a high- optical cavity or an atomic cell is analyzed. We show that the elements play a role of narrow-band microwave filters improving an OEO stability.

  20. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

    SciTech Connect

    Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; Martinez, Julio A.; Song, Erdong; Li, Qiming

    2015-11-03

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

  1. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

    DOE PAGES

    Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; Martinez, Julio A.; Song, Erdong; Li, Qiming

    2015-11-03

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrentmore » observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.« less

  2. Optoelectronic reservoir computing: tackling noise-induced performance degradation.

    PubMed

    Soriano, M C; Ortín, S; Brunner, D; Larger, L; Mirasso, C R; Fischer, I; Pesquera, L

    2013-01-14

    We present improved strategies to perform photonic information processing using an optoelectronic oscillator with delayed feedback. In particular, we study, via numerical simulations and experiments, the influence of a finite signal-to-noise ratio on the computing performance. We illustrate that the performance degradation induced by noise can be compensated for via multi-level pre-processing masks.

  3. Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

    DOEpatents

    Thompson, Mark E.; Li, Jian; Forrest, Stephen; Rand, Barry

    2011-02-22

    An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

  4. Novel optoelectronic RS flipflop based on optically coupled inverters

    NASA Astrophysics Data System (ADS)

    Chino, T.; Matsuda, K.; Adachi, H.; Shibata, J.

    1992-03-01

    An optoelectronic RS flipflop emitting differential output has been proposed and demonstrated. It consists of two optical inverters. Optical interconnections are used to couple these inverters. Stable operation for the variation of bias voltage is demonstrated, which exhibits the possibility for 2-dimensional integration.

  5. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2013-04-09

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  6. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2011-02-22

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  7. Magnetometer Based on the Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

    2005-01-01

    We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.

  8. A coupled optoelectronic oscillator with three resonant cavities

    NASA Astrophysics Data System (ADS)

    Shan, Yuan-yuan; Jiang, Yang; Bai, Guang-fu; Ma, Chuang; Li, Hong-xia; Liang, Jian-hui

    2015-01-01

    A new single-mode optoelectronic oscillator (OEO) with three coupled cavities is proposed and demonstrated. A Fabry-Perot (F-P) cavity fiber laser and an optical-electrical feedback branch are coupled together to construct an optoelectronic oscillator, where the F-P cavity fiber laser serves as a light source, and a modulator is placed in the laser cavity to implement reciprocating modulation, which simultaneously splits the laser cavity into two parts and forms a dual-loop configuration. To complete an optoelectronic oscillator, part of optical signal is output from the F-P cavity to implement the feedback modulation, which constructs the third cavity. Since only the oscillation signal satisfies the requirements of all the three cavities, a single-mode oscillation can be finally achieved. Three resonant cavities are successfully designed without adding more optoelectronic devices, and the side-modes can be well suppressed with low cost. The oscillation condition is theoretically analyzed. In the experimental demonstration, a 20 GHz single longitudinal mode microwave signal is successfully obtained.

  9. Novel Approach for Positioning Sensor Lead Wires on SiC-Based Monolithic Ceramic and FRCMC Components/Subcomponents Having Flat and Curved Surfaces

    NASA Technical Reports Server (NTRS)

    Kiser, J. Douglas; Singh, Mrityunjay; Lei, Jin-Fen; Martin, Lisa C.

    1999-01-01

    A novel attachment approach for positioning sensor lead wires on silicon carbide-based monolithic ceramic and fiber reinforced ceramic matrix composite (FRCMC) components has been developed. This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed for the joining of silicon carbide-based ceramic and fiber reinforced composites. The ARCJoinT technique has previously been shown to produce joints with tailorable thickness and good high temperature strength. In this study, silicon carbide-based ceramic and FRCMC attachments of different shapes and sizes were joined onto silicon carbide fiber reinforced silicon carbide matrix (SiC/ SiC) composites having flat and curved surfaces. Based on results obtained in previous joining studies. the joined attachments should maintain their mechanical strength and integrity at temperatures up to 1350 C in air. Therefore they can be used to position and secure sensor lead wires on SiC/SiC components that are being tested in programs that are focused on developing FRCMCs for a number of demanding high temperature applications in aerospace and ground-based systems. This approach, which is suitable for installing attachments on large and complex shaped monolithic ceramic and composite components, should enhance the durability of minimally intrusive high temperature sensor systems. The technology could also be used to reinstall attachments on ceramic components that were damaged in service.

  10. Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

    SciTech Connect

    Ramírez, J. M. Berencén, Y.; Garrido, B.; Cueff, S.; Labbé, C.

    2014-08-28

    Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er{sup 3+} ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.

  11. Optical properties of porous silicon processed in tetraethyl orthosilicate

    NASA Astrophysics Data System (ADS)

    Len'shin, A. S.; Kashkarov, V. M.; Tsipenyuk, V. N.; Seredin, P. V.; Agapov, B. L.; Minakov, D. A.; Domashevskaya, E. P.

    2013-02-01

    We investigate the change in the composition and optical properties of porous silicon (por-Si) obtained by electrochemical etching of a palate made of n-type (111) silicon single crystal under high-temperature annealing and processing in tetraethyl orthosilicate (TEOS). It is shown that TEOS processing and annealing prevent contamination of a sample stored for a long time in atmosphere. The processing of por-Si in TEOS does not change the position of the photoluminescence (PL) peak and suppresses PL to a smaller extent as compared to annealing of por-Si. This increases the reliability of optoelectronic devices based on por-Si.

  12. Monolithically integrated broad-band Mach-Zehnder interferometers for highly sensitive label-free detection of biomolecules through dual polarization optics.

    PubMed

    Psarouli, A; Salapatas, A; Botsialas, A; Petrou, P S; Raptis, I; Makarona, E; Jobst, G; Tukkiniemi, K; Sopanen, M; Stoffer, R; Kakabakos, S E; Misiakos, K

    2016-01-01

    Protein detection and characterization based on Broad-band Mach-Zehnder Interferometry is analytically outlined and demonstrated through a monolithic silicon microphotonic transducer. Arrays of silicon light emitting diodes and monomodal silicon nitride waveguides forming Mach-Zehnder interferometers were integrated on a silicon chip. Broad-band light enters the interferometers and exits sinusoidally modulated with two distinct spectral frequencies characteristic of the two polarizations. Deconvolution in the Fourier transform domain makes possible the separation of the two polarizations and the simultaneous monitoring of the TE and the TM signals. The dual polarization analysis over a broad spectral band makes possible the refractive index calculation of the binding adlayers as well as the distinction of effective medium changes into cover medium or adlayer ones. At the same time, multi-analyte detection at concentrations in the pM range is demonstrated. PMID:26825114

  13. Monolithically integrated broad-band Mach-Zehnder interferometers for highly sensitive label-free detection of biomolecules through dual polarization optics.

    PubMed

    Psarouli, A; Salapatas, A; Botsialas, A; Petrou, P S; Raptis, I; Makarona, E; Jobst, G; Tukkiniemi, K; Sopanen, M; Stoffer, R; Kakabakos, S E; Misiakos, K

    2015-12-02

    Protein detection and characterization based on Broad-band Mach-Zehnder Interferometry is analytically outlined and demonstrated through a monolithic silicon microphotonic transducer. Arrays of silicon light emitting diodes and monomodal silicon nitride waveguides forming Mach-Zehnder interferometers were integrated on a silicon chip. Broad-band light enters the interferometers and exits sinusoidally modulated with two distinct spectral frequencies characteristic of the two polarizations. Deconvolution in the Fourier transform domain makes possible the separation of the two polarizations and the simultaneous monitoring of the TE and the TM signals. The dual polarization analysis over a broad spectral band makes possible the refractive index calculation of the binding adlayers as well as the distinction of effective medium changes into cover medium or adlayer ones. At the same time, multi-analyte detection at concentrations in the pM range is demonstrated.

  14. Monolithically integrated broad-band Mach-Zehnder interferometers for highly sensitive label-free detection of biomolecules through dual polarization optics

    PubMed Central

    Psarouli, A.; Salapatas, A.; Botsialas, A.; Petrou, P. S.; Raptis, I.; Makarona, E.; Jobst, G.; Tukkiniemi, K.; Sopanen, M.; Stoffer, R.; Kakabakos, S. E.; Misiakos, K.

    2015-01-01

    Protein detection and characterization based on Broad-band Mach-Zehnder Interferometry is analytically outlined and demonstrated through a monolithic silicon microphotonic transducer. Arrays of silicon light emitting diodes and monomodal silicon nitride waveguides forming Mach-Zehnder interferometers were integrated on a silicon chip. Broad-band light enters the interferometers and exits sinusoidally modulated with two distinct spectral frequencies characteristic of the two polarizations. Deconvolution in the Fourier transform domain makes possible the separation of the two polarizations and the simultaneous monitoring of the TE and the TM signals. The dual polarization analysis over a broad spectral band makes possible the refractive index calculation of the binding adlayers as well as the distinction of effective medium changes into cover medium or adlayer ones. At the same time, multi-analyte detection at concentrations in the pM range is demonstrated. PMID:26825114

  15. Monolithically integrated broad-band Mach-Zehnder interferometers for highly sensitive label-free detection of biomolecules through dual polarization optics

    NASA Astrophysics Data System (ADS)

    Psarouli, A.; Salapatas, A.; Botsialas, A.; Petrou, P. S.; Raptis, I.; Makarona, E.; Jobst, G.; Tukkiniemi, K.; Sopanen, M.; Stoffer, R.; Kakabakos, S. E.; Misiakos, K.

    2015-12-01

    Protein detection and characterization based on Broad-band Mach-Zehnder Interferometry is analytically outlined and demonstrated through a monolithic silicon microphotonic transducer. Arrays of silicon light emitting diodes and monomodal silicon nitride waveguides forming Mach-Zehnder interferometers were integrated on a silicon chip. Broad-band light enters the interferometers and exits sinusoidally modulated with two distinct spectral frequencies characteristic of the two polarizations. Deconvolution in the Fourier transform domain makes possible the separation of the two polarizations and the simultaneous monitoring of the TE and the TM signals. The dual polarization analysis over a broad spectral band makes possible the refractive index calculation of the binding adlayers as well as the distinction of effective medium changes into cover medium or adlayer ones. At the same time, multi-analyte detection at concentrations in the pM range is demonstrated.

  16. Enhanced axial confinement in a monolithically integrated self-rolled-up SiNx vertical microring photonic coupler

    NASA Astrophysics Data System (ADS)

    Yu, Xin; Goddard, Lynford L.; Li, Xiuling; Chen, Xiaogang

    2016-09-01

    We report an efficient method to introduce enhanced axial confinement in the self-rolled-up SiNx vertical microtube coupler by depositing a thin layer of high refractive index material strip within the coupling section and effectively forming a vertical microring. Three times wider mode spacing is observed in such a vertical microring coupler monolithically integrated with a silicon nitride ridge waveguide as compared to the one without such axial confinement. More importantly, single mode operation within the telecomm C-band and S-band is achieved.

  17. Monolithically integrated self-rolled-up microtube-based vertical coupler for three-dimensional photonic integration

    SciTech Connect

    Yu, Xin; Arbabi, Ehsan; Goddard, Lynford L.; Li, Xiuling; Chen, Xiaogang

    2015-07-20

    We demonstrate a self-rolled-up microtube-based vertical photonic coupler monolithically integrated on top of a ridge waveguide to achieve three-dimensional (3D) photonic integration. The fabrication process is fully compatible with standard planar silicon processing technology. Strong light coupling between the vertical coupler and the ridge waveguide was observed experimentally, which may provide an alternative route for 3D heterogeneous photonic integration. The highest extinction ratio observed in the transmission spectrum passing through the ridge waveguide was 23 dB.

  18. Catastrophic failure of a monolithic zirconia prosthesis.

    PubMed

    Chang, Jae-Seung; Ji, Woon; Choi, Chang-Hoon; Kim, Sunjai

    2015-02-01

    Recently, monolithic zirconia restorations have received attention as an alternative to zirconia veneered with feldspathic porcelain to eliminate chipping failures of veneer ceramics. In this clinical report, a patient with mandibular edentulism received 4 dental implants in the interforaminal area, and a screw-retained monolithic zirconia prosthesis was fabricated. The patient also received a maxillary complete removable dental prosthesis over 4 anterior roots. At the 18-month follow-up, all of the zirconia cylinders were seen to be fractured, and the contacting abutment surfaces had lost structural integrity. The damaged abutments were replaced with new abutments, and a new prosthesis was delivered with a computer-assisted design and computer-assisted manufacturing fabricated titanium framework with denture teeth and denture base resins. At the 6-month recall, the patient did not have any problems. Dental zirconia has excellent physical properties; however, care should be taken to prevent excessive stresses on the zirconia cylinders when a screw-retained zirconia restoration is planned as a definitive prosthesis.

  19. High surface area, high permeability carbon monoliths

    SciTech Connect

    Lagasse, R.R.; Schroeder, J.L.

    1994-12-31

    The goal of this work is to prepare carbon monoliths having precisely tailored pore size distribution. Prior studies have demonstrated that poly(acrylonitrile) can be processed into a precursor having tailored macropore structure. Since the macropores were preserved during pyrolysis, this synthetic process provided a route to porous carbon having macropores with size =0.1 to 10{mu}m. No micropores of size <2 nm could be detected in the carbon, however, by nitrogen adsorption. In the present work, the authors have processed a different polymer, poly(vinylidene chloride) into a macroporous precursor, Pyrolysis produced carbon monoliths having macropores derived from the polymer precursor as well as extensive microporosity produced during the pyrolysis of the polymer. One of these carbons had BET surface area of 1,050 m{sup 2}/g and about 1.2 cc/g total pore volume, with about 1/3 of the total pore volume in micropores and the remainder in 1{mu}m macropores. No mesopores in the intermediate size range could be detected by nitrogen adsorption. Carbon materials having high surface area as well as micron size pores have potential applications as electrodes for double layer supercapacitors containing liquid electrolyte, or as efficient media for performing chemical separations.

  20. Monolithic Hydrogen Peroxide Catalyst Bed Development

    NASA Technical Reports Server (NTRS)

    Ponzo, J. B.

    2003-01-01

    With recent increased industry and government interest in rocket grade hydrogen peroxide as a viable propellant, significant effort has been expended to improve on earlier developments. This effort has been predominately centered in improving heterogeneous. typically catalyst beds; and homogeneous catalysts, which are typically solutions of catalytic substances. Heterogeneous catalyst beds have traditionally consisted of compressed wire screens plated with a catalytic substance, usually silver, and were used m many RCS applications (X-1, Mercury, and Centaur for example). Aerojet has devised a heterogeneous catalyst design that is monolithic (single piece), extremely compact, and has pressure drops equal to or less than traditional screen beds. The design consists of a bonded stack of very thin, photoetched metal plates, silver coated. This design leads to a high surface area per unit volume and precise flow area, resulting in high, stable, and repeatable performance. Very high throughputs have been demonstrated with 90% hydrogen peroxide. (0.60 lbm/s/sq in at 1775-175 psia) with no flooding of the catalyst bed. Bed life of over 900 seconds has also been demonstrated at throughputs of 0.60 lbm/s/sq in across varying chamber pressures. The monolithic design also exhibits good starting performance, short break-in periods, and will easily scale to various sizes.

  1. Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.

    PubMed

    Yang, Jun; Bhattacharya, Pallab

    2008-03-31

    The monolithic integration of epitaxially-grown InGaAs/GaAs self-organized quantum dot lasers with hydrogenated amorphous silicon (a:Si-H) waveguides on silicon substrates is demonstrated. Hydrogenated amorphous silicon waveguides, formed by plasma-enhanced-chemical-vapor deposition (PECVD), exhibit a propagation loss of approximately 10 dB/cm at a wavelength of 1.05 microm. The laser-waveguide coupling, with coupling coefficient of 22%, is achieved through a 3.2 microm-width groove etched by focused-ion-beam (FIB) milling which creates high-quality etched GaAs facets.

  2. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    NASA Astrophysics Data System (ADS)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  3. Reversible modulation of spontaneous emission by strain in silicon nanowires.

    PubMed

    Shiri, Daryoush; Verma, Amit; Selvakumar, C R; Anantram, M P

    2012-01-01

    We computationally study the effect of uniaxial strain in modulating the spontaneous emission of photons in silicon nanowires. Our main finding is that a one to two orders of magnitude change in spontaneous emission time occurs due to two distinct mechanisms: (A) Change in wave function symmetry, where within the direct bandgap regime, strain changes the symmetry of wave functions, which in turn leads to a large change of optical dipole matrix element. (B) Direct to indirect bandgap transition which makes the spontaneous photon emission to be of a slow second order process mediated by phonons. This feature uniquely occurs in silicon nanowires while in bulk silicon there is no change of optical properties under any reasonable amount of strain. These results promise new applications of silicon nanowires as optoelectronic devices including a mechanism for lasing. Our results are verifiable using existing experimental techniques of applying strain to nanowires.

  4. Hydrogel coated monoliths for enzymatic hydrolysis of penicillin G.

    PubMed

    de Lathouder, K M; Smeltink, M W; Straathof, A J J; Paasman, M A; van de Sandt, E J A X; Kapteijn, F; Moulijn, J A

    2008-08-01

    The objective of this work was to develop a hydrogel-coated monolith for the entrapment of penicillin G acylase (E. coli, PGA). After screening of different hydrogels, chitosan was chosen as the carrier material for the preparation of monolithic biocatalysts. This protocol leads to active immobilized biocatalysts for the enzymatic hydrolysis of penicillin G (PenG). The monolithic biocatalyst was tested in a monolith loop reactor (MLR) and compared with conventional reactor systems using free PGA, and a commercially available immobilized PGA. The optimal immobilization protocol was found to be 5 g l(-1) PGA, 1% chitosan, 1.1% glutaraldehyde and pH 7. Final PGA loading on glass plates was 29 mg ml(-1) gel. For 400 cpsi monoliths, the final PGA loading on functionalized monoliths was 36 mg ml(-1) gel. The observed volumetric reaction rate in the MLR was 0.79 mol s(-1) m(-3) (monolith). Apart from an initial drop in activity due to wash out of PGA at higher ionic strength, no decrease in activity was observed after five subsequent activity test runs. The storage stability of the biocatalysts is at least a month without loss of activity. Although the monolithic biocatalyst as used in the MLR is still outperformed by the current industrial catalyst (immobilized preparation of PGA, 4.5 mol s(-1) m(-3) (catalyst)), the rate per gel volume is slightly higher for monolithic catalysts. Good activity and improved mechanical strength make the monolithic bioreactor an interesting alternative that deserves further investigation for this application. Although moderate internal diffusion limitations have been observed inside the gel beads and in the gel layer on the monolith channel, this is not the main reason for the large differences in reactor performance that were observed. The pH drop over the reactor as a result of the chosen method for pH control results in a decreased performance of both the MLR and the packed bed reactor compared to the batch system. A different reactor

  5. A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

    NASA Astrophysics Data System (ADS)

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2015-10-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

  6. Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon

    PubMed Central

    Qiu, Y.; Bender, H.; Richard, O.; Kim, M.-S.; Van Besien, E.; Vos, I.; de Potter de ten Broeck, M.; Mocuta, D.; Vandervorst, W.

    2015-01-01

    Silicon crystallizes in the diamond-cubic phase and shows only a weak emission at 1.1 eV. Diamond-hexagonal silicon however has an indirect bandgap at 1.5 eV and has therefore potential for application in opto-electronic devices. Here we discuss a method based on advanced silicon device processing to form diamond-hexagonal silicon nano-ribbons. With an appropriate temperature anneal applied to densify the oxide fillings between silicon fins, the lateral outward stress exerted on fins sandwiched between wide and narrow oxide windows can result in a phase transition from diamond-cubic to diamond-hexagonal Si at the base of these fins. The diamond-hexagonal slabs are generally 5–8 nm thick and can extend over the full width and length of the fins, i.e. have a nano-ribbon shape along the fins. Although hexagonal silicon is a metastable phase, once formed it is found being stable during subsequent high temperature treatments even during process steps up to 1050 ºC. PMID:26239286

  7. Preparation of a polar monolithic coating for stir bar sorptive extraction of emerging contaminants from wastewaters.

    PubMed

    Gilart, Núria; Cormack, P A G; Marcé, Rosa Maria; Borrull, Francesc; Fontanals, Núria

    2013-06-21

    A new polar monolith based on poly(poly(ethylene glycol) methacrylate-co-pentaerythritol triacrylate) (poly(PEGMA-co-PETRA)) was first synthesised, after the optimisation of the polymerisation conditions, and applied as a coating for the stir bar sorptive extraction (SBSE) of a group of pharmaceuticals and personal care products (PPCPs) from environmental water samples. Several parameters affecting extraction and liquid desorption in SBSE were investigated to achieve the optimal sorption efficiencies for the studied analytes. Under the optimised experimental conditions, a rapid, simple and sensitive SBSE performance was provided by the in-house monolithic stir bar. Moreover, the in-house coating was able to extract and desorb most of the studied analytes more effectively and quickly, due to its polar behaviour and suitable mechanical and physical properties, in comparison with the recently commercialised polar stir bars (EG Silicone Twister(®) and Acrylate Twister(®)). The analytical methodology, including SBSE followed by liquid chromatography coupled to tandem mass spectrometry (LC-MS/MS), was validated and successfully applied for the determination of a group of PPCPs in wastewater samples.

  8. A monolithic continuous-flow microanalyzer with amperometric detection based on the green tape technology.

    PubMed

    Martínez-Cisneros, Cynthia S; da Rocha, Zaira; Ferreira, Marcos; Valdés, Francisco; Seabra, Antonio; Góngora-Rubio, Mario; Alonso-Chamarro, Julian

    2009-09-01

    The development of micro total analysis systems (muTAS) has become a growing research field. Devices that include not only the fluidics and the detection system but also the associated electronics are reported scarcely in the literature because of the complexity and the cost involved for their monolithic integration. Frequently, dedicated devices aimed at solving specific analytical problems are needed. In these cases, low-volume production processes are a better alternative to mass production technologies such as silicon and glass. In this work, the design, fabrication, and evaluation of a continuous-flow amperometric microanalyzer based on the green tape technology is presented. The device includes the microfluidics, a complete amperometric detection system, and the associated electronics. The operational lifetime of the working electrode constitutes a major weak point in electrochemical detection systems, especially when it is integrated in monolithic analytical devices. To increase the overall system reliability and its versatility, it was integrated following an exchangeable configuration. Using this approach, working electrodes can be readily exchanged, according to the analyte to be determined or when their surfaces become passivated or poisoned. Furthermore, the electronics of the system allow applying different voltamperometric techniques and provide four operational working ranges (125, 12.5, 1.25, and 0.375 microA) to do precise determinations at different levels of current intensity.

  9. Smart Sensing Strip Using Monolithically Integrated Flexible Flow Sensor for Noninvasively Monitoring Respiratory Flow

    PubMed Central

    Jiang, Peng; Zhao, Shuai; Zhu, Rong

    2015-01-01

    This paper presents a smart sensing strip for noninvasively monitoring respiratory flow in real time. The monitoring system comprises a monolithically-integrated flexible hot-film flow sensor adhered on a molded flexible silicone case, where a miniaturized conditioning circuit with a Bluetooth4.0 LE module are packaged, and a personal mobile device that wirelessly acquires respiratory data transmitted from the flow sensor, executes extraction of vital signs, and performs medical diagnosis. The system serves as a wearable device to monitor comprehensive respiratory flow while avoiding use of uncomfortable nasal cannula. The respiratory sensor is a flexible flow sensor monolithically integrating four elements of a Wheatstone bridge on single chip, including a hot-film resistor, a temperature-compensating resistor, and two balancing resistors. The monitor takes merits of small size, light weight, easy operation, and low power consumption. Experiments were conducted to verify the feasibility and effectiveness of monitoring and diagnosing respiratory diseases using the proposed system. PMID:26694401

  10. Smart Sensing Strip Using Monolithically Integrated Flexible Flow Sensor for Noninvasively Monitoring Respiratory Flow.

    PubMed

    Jiang, Peng; Zhao, Shuai; Zhu, Rong

    2015-01-01

    This paper presents a smart sensing strip for noninvasively monitoring respiratory flow in real time. The monitoring system comprises a monolithically-integrated flexible hot-film flow sensor adhered on a molded flexible silicone case, where a miniaturized conditioning circuit with a Bluetooth4.0 LE module are packaged, and a personal mobile device that wirelessly acquires respiratory data transmitted from the flow sensor, executes extraction of vital signs, and performs medical diagnosis. The system serves as a wearable device to monitor comprehensive respiratory flow while avoiding use of uncomfortable nasal cannula. The respiratory sensor is a flexible flow sensor monolithically integrating four elements of a Wheatstone bridge on single chip, including a hot-film resistor, a temperature-compensating resistor, and two balancing resistors. The monitor takes merits of small size, light weight, easy operation, and low power consumption. Experiments were conducted to verify the feasibility and effectiveness of monitoring and diagnosing respiratory diseases using the proposed system. PMID:26694401

  11. Preventing nanoscale wear of atomic force microscopy tips through the use of monolithic ultrananocrystalline diamond probes.

    PubMed

    Liu, J; Grierson, D S; Moldovan, N; Notbohm, J; Li, S; Jaroenapibal, P; O'Connor, S D; Sumant, A V; Neelakantan, N; Carlisle, J A; Turner, K T; Carpick, R W

    2010-05-21

    Nanoscale wear is a key limitation of conventional atomic force microscopy (AFM) probes that results in decreased resolution, accuracy, and reproducibility in probe-based imaging, writing, measurement, and nanomanufacturing applications. Diamond is potentially an ideal probe material due to its unrivaled hardness and stiffness, its low friction and wear, and its chemical inertness. However, the manufacture of monolithic diamond probes with consistently shaped small-radius tips has not been previously achieved. The first wafer-level fabrication of monolithic ultrananocrystalline diamond (UNCD) probes with <5-nm grain sizes and smooth tips with radii of 30-40 nm is reported, which are obtained through a combination of microfabrication and hot-filament chemical vapor deposition. Their nanoscale wear resistance under contact-mode scanning conditions is compared with that of conventional silicon nitride (SiN(x)) probes of similar geometry at two different relative humidity levels (approximately 15 and approximately 70%). While SiN(x) probes exhibit significant wear that further increases with humidity, UNCD probes show little measurable wear. The only significant degradation of the UNCD probes observed in one case is associated with removal of the initial seed layer of the UNCD film. The results show the potential of a new material for AFM probes and demonstrate a systematic approach to studying wear at the nanoscale.

  12. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  13. An ultrafast silicon nanoplasmonic ballistic triode

    SciTech Connect

    Greig, S. R. Elezzabi, A. Y.

    2014-12-15

    A nanoscale three terminal silicon based nanoplasmonic triode is proposed as a nanometer transistor. The device is suitable for monolithic integration with complementary-metal-oxide-semiconductor technology. Due to the highly spatially inhomogeneous, highly confined nanoplasmonic mode, electrons generated through two-photon absorption in the silicon are ponderomotively accelerated towards the copper anode producing an output current. Application of a negative grid voltage allows for control of the output current. The nanoplasmonic triode is able to achieve output current as high as 628 mA/μm on an ultrafast timescale of 150 fs in a compact footprint of 0.07 μm{sup 2}. Reduction of the plasmonic field strength allows for a CMOS compatible current of 11.7 mA/μm. The results demonstrate the potential for the compact optical control of current useful for applications in high-speed, high current switching, and amplification.

  14. The Development of Engineering Tomography for Monolithic and Composite Materials and Components

    NASA Technical Reports Server (NTRS)

    Hemann, John

    1997-01-01

    The research accomplishments under this grant were very extensive in the areas of the development of engineering tomography for monolithic and composite materials and components. Computed tomography was used on graphite composite pins and bushings to find porosity, cracks, and delaminations. It supported the following two programs: Reusable Launch Vehicle (RLV) and Southern Research institute (SRI). Did research using CT and radiography on Nickel based Superalloy dogbones and found density variations and gas shrinkage porosity. Did extensive radiography and CT of PMC composite flywheels and found delamination and non-uniform fiber distribution. This grant supported the Attitude Control Energy Storage Experiment (ACESE) program. Found broken fibers and cracks of outer stainless steel fibers using both radiographic and CT techniques on Pratt and Whitney fuel lines; Supported the Pratt & Whitney and Aging Aircraft engines program. Grant research helped identify and corroborate thickness variations and density differences in a silicon nitride "ROTH" tube using computed tomography.

  15. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  16. Rapid process for producing transparent, monolithic porous glass

    DOEpatents

    Coronado, Paul R.

    2006-02-14

    A process for making transparent porous glass monoliths from gels. The glass is produced much faster and in much larger sizes than present technology for making porous glass. The process reduces the cost of making large porous glass monoliths because: 1) the process does not require solvent exchange nor additives to the gel to increase the drying rates, 2) only moderate temperatures and pressures are used so relatively inexpensive equipment is needed, an 3) net-shape glass monoliths are possible using this process. The process depends on the use of temperature to control the partial pressure of the gel solvent in a closed vessel, resulting in controlled shrinking during drying.

  17. A decoupled monolithic projection method for natural convection problems

    NASA Astrophysics Data System (ADS)

    Pan, Xiaomin; Kim, Kyoungyoun; Lee, Changhoon; Choi, Jung-Il

    2016-06-01

    We propose an efficient monolithic numerical procedure based on a projection method for solving natural convection problems. In the present monolithic method, the buoyancy, linear diffusion, and nonlinear convection terms are implicitly advanced by applying the Crank-Nicolson scheme in time. To avoid an otherwise inevitable iterative procedure in solving the monolithic discretized system, we use a linearization of the nonlinear convection terms and approximate block lower-upper (LU) decompositions along with approximate factorization. Numerical simulations demonstrate that the proposed method is more stable and computationally efficient than other semi-implicit methods, preserving temporal second-order accuracy.

  18. Advanced monolithic pixel sensors using SOI technology

    NASA Astrophysics Data System (ADS)

    Miyoshi, Toshinobu; Arai, Yasuo; Asano, Mari; Fujita, Yowichi; Hamasaki, Ryutaro; Hara, Kazuhiko; Honda, Shunsuke; Ikegami, Yoichi; Kurachi, Ikuo; Mitsui, Shingo; Nishimura, Ryutaro; Tauchi, Kazuya; Tobita, Naoshi; Tsuboyama, Toru; Yamada, Miho

    2016-07-01

    We are developing advanced pixel sensors using silicon-on-insulator (SOI) technology. A SOI wafer is used; top silicon is used for electric circuit and bottom silicon is used as a sensor. Target applications are high-energy physics, X-ray astronomy, material science, non-destructive inspection, medical application and so on. We have developed two integration-type pixel sensors, FPIXb and INTPIX7. These sensors were processed on single SOI wafers with various substrates in n- or p-type and double SOI wafers. The development status of double SOI sensors and some up-to-date test results of n-type and p-type SOI sensors are shown.

  19. Neutral, Charged and Stratified Polar Monoliths for Hydrophilic Interaction Capillary Electrochromatography

    PubMed Central

    Gunasena, Dilani N.; El Rassi, Ziad

    2013-01-01

    Novel polar monoliths were introduced for hydrophilic interaction capillary electrochromatography (HI-CEC). In one case, a neutral polar monolith resulted from the in situ polymerization of glyceryl methacrylate (GMM) and pentaerythritol triacrylate (PETA) in a ternary porogenic solvent. GMM and PETA possess hydroxyl functional groups, which impart the monolith with hydrophilic interaction sites. This monolith is designated as hydroxy monolith. Although the hydroxy monolith is neutral and void of fixed charges on the surface, a relatively strong cathodal EOF was observed due to the electric double layer formed by the adsorption of ions from the mobile phase, producing a bulk mobile phase flow. The second monolith is charged and referred to as AP-monolith that possesses amine/amide functionalities on its surface, and was prepared by the in situ polymerization of N-(3-aminopropyl) methacrylamide hydrochloride (NAPM) and ethylene dimethacrylate (EDMA) in the presence of cyclohexanol, dodecanol and methanol as porogens. Over the pH range studied a strong anodal EOF was observed. The AP-monolith was further exploited in HI-CEC by modifying its surface with neutral mono- and oligosaccharides to produce a series of the so called sugar modified AP-monoliths (SMAP-monolith), which are considered as stratified hydrophilic monoliths possessing a sub-layer of polar amine/amide groups and a top layer of sugar (a polyhydroxy top layer).The SMAP-monoliths can be viewed as a blend of both the hydroxy monolith and the AP-monolith. The polarity of the various monoliths seems to follow the order: hydroxy monolith < AP-monolith < SMAP-monolith. The novel monoliths were characterized over a wide range of elution conditions with a variety of polar solutes including phenols, substituted phenols, nucleic acid bases, nucleosides and nucleotides PMID:23972465

  20. Infrared luminescence from spark-processed silicon and erbium-doped spark-processed silicon

    NASA Astrophysics Data System (ADS)

    Kim, Kwanghoon

    Spark-processed silicon has substantial potential as an optical material. In the past 15 years, our group has investigated a multitude of properties of this unique material, concentrating mostly on the visible and near UV spectral region. The present study expands our endeavors to infrared photoluminescence (PL) of undoped spark-processed silicon. A broad infrared photoluminescence peak at around 945 nm under Ar ion laser excitation was observed at room temperature when investigating a spark-processed layer on a silicon wafer. This light emission is interpreted to be the result of energy transfers between certain energy levels involving the spark-processed silicon matrix. The infrared PL intensity of spark-processed silicon was found to be proportional to the excitation energy. However, telecommunication requires presently a light emission near 1.54 mum (because fiber-optics "conductors" have a minimum in absorption at this wavelength). This cannot be achieved with pure spark-processed silicon. Therefore spark-processed silicon needs to be doped with a rare-earth element such as erbium to shift the emission to longer wavelengths. It is known that erbium has a light emission from intrashell energy transition, that is, from 4I13/2 →4I15/2. Erbium was deposited on a silicon wafer followed by spark-processing, which enables diffusion of some erbium into the SiOx matrix, thus achieving opto-electronically active spark-processed silicon. Rapid thermal annealing enhances the 1.54 mum wavelength intensity from erbium-doped spark-processed silicon. The processing conditions that result in the most efficient photoluminescence have been established and will be presented in this dissertation. In contrast to erbium-doped crystalline silicon, whose light emission is highly affected by temperature (103 times reduction in intensity when heating from 12 K to 150 K), the intensity of erbium-doped spark-processed silicon decreases by only a factor of 4 when heated from 15 K to room