Science.gov

Sample records for monolithic silicon optoelectronic

  1. A monolithic silicon optoelectronic transducer as a real-time affinity biosensor.

    PubMed

    Misiakos, Konstantinos; Kakabakos, Sotirios E; Petrou, Panagiota S; Ruf, Hans H

    2004-03-01

    An optical real-time affinity biosensor, which is based on a monolithic silicon optoelectronic transducer and a microfluidic module, is described. The transducer monolithically integrates silicon avalanche diodes as light sources, silicon nitride optical fibers, and p/n junction detectors and efficiently intercouples these elements through a self-alignment technique. The transducer surface is hydrophilized by oxygen plasma treatment, silanized with (3-aminopropyl)triethoxysilane and bioactivated through adsorption of the biomolecular probes. The use of a microfluidic module allows real-time monitoring of the binding reaction of the gold nanoparticle-labeled analytes with the immobilized probes. Their binding within the evanescent field at the surface of the optical fiber causes attenuated total reflection of the waveguided modes and reduction of the detector photocurrent. The biotin-streptavidin model assay was used for the evaluation of the analytical potentials of the device developed. Detection limits of 3.8 and 13 pM in terms of gold nanoparticle-labeled streptavidin were achieved for continuous- and stopped-flow assay modes, respectively. The detection sensitivity was improved by silver plating of the immobilized gold nanoparticles, and a detection limit of 20 fM was obtained after 20-min of silver plating. In addition, two different analytes, streptavidin and anti-mouse IgG, were simultaneously assayed on the same chip demonstrating the multianalyte potential of the sensor developed.

  2. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  3. A bioanalytical microsystem for protein and DNA sensing based on a monolithic silicon optoelectronic transducer

    NASA Astrophysics Data System (ADS)

    Misiakos, K.; Petrou, P. S.; Kakabakos, S. E.; Ruf, H. H.; Ehrentreich-Förster, E.; Bier, F. F.

    2005-01-01

    A bioanalytical microsystem that is based on a monolithic silicon optical transducer and a microfluidic module and it is appropriate for real-time sensing of either DNA or protein analytes is presented. The optical transducer monolithically integrates silicon avalanche diodes as light sources, silicon nitride optical fibers and detectors and efficiently intercouples these optical elements through a self-alignment technique. After hydrophilization and silanization of the transducer surface, the biomolecular probes are immobilized through physical adsorption. Detection is performed through reaction of the immobilized biomolecules with gold nanoparticle labeled counterpart molecules. The binding of these molecules within the evanescent field at the surface of the optical fiber cause attenuated total reflection of the waveguided modes and reduction of the detector photocurrent. Using the developed microsystem, determination of single nucleotide polymorphism (SNP) in the gene of the human phenol sulfotransferase SULT1A1 was achieved. Full-matching hybrid resulted in 4-5 times higher signals compared to the mismatched hybrid after hybridization and dissociation processes. The protein sensing abilities of the developed microsystem were also investigated through a non-competitive assay for the determination of the MB isoform of creatine kinase enzyme (CK-MB) that is a widely used cardiac marker.

  4. Monolithic silicon bolometers

    NASA Technical Reports Server (NTRS)

    Downey, P. M.; Jeffries, A. D.; Meyer, S. S.; Weiss, R.; Bachner, F. J.; Donnelly, J. P.; Lindley, W. T.; Mountain, R. W.; Silversmith, D. J.

    1984-01-01

    A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.

  5. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-03-22

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  6. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-01-05

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  7. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  8. Silicon photomultiplier-based optoelectronic mixing

    NASA Astrophysics Data System (ADS)

    Yishuo, Song; Xiaoping, Du; Zhaoyang, Zeng; Shengjun, Wang

    2013-09-01

    Silicon photomultiplier (SiPM)-based optoelectronic mixing (OEM) is studied for the first time. The validity of SiPM-based OEM is experimentally verified. Compared with the avalanche photodiodes-based OEM, the SiPM-based OEM is less noisy and easy to realize for its low voltage operation and high responsivity.

  9. Strength and toughness of monolithic and composite silicon nitrides

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.

    1990-01-01

    The strength and toughness of two composite and two monolithic silicon nitrides were measured from 25 to 1400 C. The monolithic and composite materials were made from similar starting powders. Both of the composite materials contained 30 vol percent silicon carbide whiskers. All measurements were made by four point flexure in surrounding air and humidity. The composite and monolithic materials exhibited similar fast fracture properties as a function of temperature.

  10. InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

    NASA Technical Reports Server (NTRS)

    Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

    1995-01-01

    A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

  11. Neutron spectrometry with a monolithic silicon telescope.

    PubMed

    Agosteo, S; D'Angelo, G; Fazzi, A; Para, A Foglio; Pola, A; Zotto, P

    2007-01-01

    A neutron spectrometer was set-up by coupling a polyethylene converter with a monolithic silicon telescope, consisting of a DeltaE and an E stage-detector (about 2 and 500 microm thick, respectively). The detection system was irradiated with monoenergetic neutrons at INFN-Laboratori Nazionali di Legnaro (Legnaro, Italy). The maximum detectable energy, imposed by the thickness of the E stage, is about 8 MeV for the present detector. The scatter plots of the energy deposited in the two stages were acquired using two independent electronic chains. The distributions of the recoil-protons are well-discriminated from those due to secondary electrons for energies above 0.350 MeV. The experimental spectra of the recoil-protons were compared with the results of Monte Carlo simulations using the FLUKA code. An analytical model that takes into account the geometrical structure of the silicon telescope was developed, validated and implemented in an unfolding code. The capability of reproducing continuous neutron spectra was investigated by irradiating the detector with neutrons from a thick beryllium target bombarded with protons. The measured spectra were compared with data taken from the literature. Satisfactory agreement was found.

  12. Growth and characterization of silicon-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Filios, Adam A.

    Photonics, a blending of optics and electronics, has emerged as one of the world's most rapidly developing fields. Along with microelectronics, they constitute the core technologies of the information industry, and their advances are complementing each other in the tasks of the acquisition, transmission, storage, and processing of increasing amounts of information. Microelectronic device integration has progressed to the point that complete "systems-on-the-chip" have been realized. Photonic materials need to be integrated with standard electronic circuits for the implementation of the next generation optoelectronic "super-chip" where both electrons and photons participate in the transmission and processing of information. Silicon is the cornerstone material in conventional VLSI systems. However, having a relatively small and indirect fundamental energy band-gap, silicon is an inefficient lightemitter. On the other hand, direct integration of III-V photonic materials on a silicon chip is still very problematic. Squeezing light out of silicon itself appears to be an attractive alternative. Light emission from silicon is an important fundamental issue with enormous technological implications. In this work we explore several strategies towards developing silicon based optoelectronic devices. Porous silicon, a material produced by electrochemically etching silicon in aqueous hydrofluoric acid solutions, generated great interest in the early 1990s when it was shown to exhibit relatively bright, room temperature, visible photoluminescence. However, having a poor surface morphology, the material is fragile and chemically unstable leading to degradation of light emission and preventing integration with silicon processing technology. With the development of the epitaxially grown crystalline-Si/O superlattice, we attempt to overcome the morphological problems of porous silicon, retaining its light emission characteristics. Our multilayer c-Si/O device consists of thin silicon

  13. Silicon photonic devices for optoelectronic integrated circuits

    NASA Astrophysics Data System (ADS)

    Tien, Ming-Chun

    Electronic and photonic integrated circuits use optics to overcome bottlenecks of microelectronics in bandwidth and power consumption. Silicon photonic devices such as optical modulators, filters, switches, and photodetectors have being developed for integration with electronics based on existing complementary metal-oxide-semiconductor (CMOS) circuits. An important building block of photonic devices is the optical microresonator. On-chip whispering-gallery-mode optical resonators such as microdisks, microtoroids, and microrings have very small footprint, and thus are suitable for large scale integration. Micro-electro-mechanical system (MEMS) technology enables dynamic control and tuning of optical functions. In this dissertation, microring resonators with tunable power coupling ratio using MEMS electrostatic actuators are demonstrated. The fabrication is compatible with CMOS. By changing the physical gap spacing between the waveguide coupler and the microring, the quality factor of the microring can be tuned from 16,300 to 88,400. Moreover, we have demonstrated optical switches and tunable optical add-drop filters with an optical bandwidth of 10 GHz and an extinction ratio of 20 dB. Potentially, electronic control circuits can also be integrated. To realize photonic integrated circuits on silicon, electrically-pumped silicon lasers are desirable. However, because of the indirect bandgap, silicon is a poor material for light emission compared with direct-bandgap III-V compound semiconductors. Heterogeneous integration of III-V semiconductor lasers on silicon is an alternative to provide on-chip light sources. Using a room-temperature, post-CMOS optofluidic assembly technique, we have experimentally demonstrated an InGaAsP microdisk laser integrated with silicon waveguides. Pre-fabricated InGaAsP microdisk lasers were fluidically assembled and aligned to the silicon waveguides on silicon-on-insulator (SOI) with lithographic alignment accuracy. The assembled

  14. Monolithic optoelectronic chip for label-free multi-analyte sensing applications

    NASA Astrophysics Data System (ADS)

    Raptis, Ioannis; Makarona, Eleni; Petrou, Panagiota; Kakabakos, Sotiris E.; Misiakos, Konstantinos

    2014-03-01

    The existing technological approaches employed in the realization of optical sensors still face two major challenges: the inherent inability of most sensors to integrate the optical source in the transducer chip, and the need to specifically design the optical transducer per application. We have introduced a unique Optoelectronic chip that consists of a series of light emitting diodes (LEDs) coupled to silicon nitride waveguides allowing for multi-analyte detection. Each optocoupler is structured as Broad-Band Mach-Zehnder Interferometer and has its own excitation source and can either have its own detector or the entire array can share a common detector. The light emitting devices (LEDs) are silicon avalanche diodes which when biased beyond their breakdown voltage emit in the VIS-NIR part of the spectrum. The optoelectronic chip is fabricated by standard silicon technology allowing for potential mass production in silicon foundries. The integrated nature of the optoelectronic chip and the ability to functionalize each transducer independently allows for the development of miniaturized optical transducers tailored towards multi-analyte tests. The platform has been successfully applied in bioassays and binding assays monitoring in a real-time and label-free format and is currently being applied to ultra-sensitive food safety applications.

  15. Monolithic pixel detectors in silicon on insulator technology

    NASA Astrophysics Data System (ADS)

    Bisello, Dario

    2013-05-01

    Silicon On Insulator (SOI) is becoming an attractive technology to fabricate monolithic pixel detectors. The possibility of using the depleted resistive substrate as a drift collection volume and to connect it by means of vias through the buried oxide to the pixel electronic makes this kind of approach interesting both for particle and photon detection. In this paper I report the results obtained in the development of monolithic pixel detectors in an SOI technology by a collaboration between groups from the University and INFN of Padova (Italy) and the LBNL and the SCIPP at UCSC (USA).

  16. Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

    NASA Technical Reports Server (NTRS)

    Kim, J. H.; Katz, J.; Lin, S. H.; Psaltis, D.

    1989-01-01

    A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

  17. Laser hyperdoping silicon for enhanced infrared optoelectronic properties

    NASA Astrophysics Data System (ADS)

    Warrender, Jeffrey M.

    2016-09-01

    Pulsed laser melting and rapid solidification have attracted interest for decades as a method to achieve impurity concentrations in silicon orders of magnitude above the equilibrium solubility limit. The incorporation of sulfur into silicon using this technique led to the observation of strong broadband infrared absorption in the resulting material. This observation, combined with interest in impurity band optoelectronic device concepts, has resulted in renewed interest in laser techniques for achieving high impurity concentrations. In this paper, I review the literature that led to the present understanding of laser hyperdoping and provide a summary of the optical and optoelectronic measurements made on sulfur hyperdoped silicon to date. I mention recent work exploring transition metal impurities and discuss how considerations discovered in early solidification and later rapid solidification work inform our approaches to kinetically trapping such impurities. I also provide a simplified picture of how a laser hyperdoping process is typically carried out, as an entry point for an experimentalist seeking to fabricate such layers.

  18. Monolithically Integrated High-β Nanowire Lasers on Silicon.

    PubMed

    Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

    2016-01-13

    Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.

  19. Silicon-on-insulator-based complementary metal oxide semiconductor integrated optoelectronic platform for biomedical applications

    NASA Astrophysics Data System (ADS)

    Mujeeb-U-Rahman, Muhammad; Scherer, Axel

    2016-12-01

    Microscale optical devices enabled by wireless power harvesting and telemetry facilitate manipulation and testing of localized biological environments (e.g., neural recording and stimulation, targeted delivery to cancer cells). Design of integrated microsystems utilizing optical power harvesting and telemetry will enable complex in vivo applications like actuating a single nerve, without the difficult requirement of extreme optical focusing or use of nanoparticles. Silicon-on-insulator (SOI)-based platforms provide a very powerful architecture for such miniaturized platforms as these can be used to fabricate both optoelectronic and microelectronic devices on the same substrate. Near-infrared biomedical optics can be effectively utilized for optical power harvesting to generate optimal results compared with other methods (e.g., RF and acoustic) at submillimeter size scales intended for such designs. We present design and integration techniques of optical power harvesting structures with complementary metal oxide semiconductor platforms using SOI technologies along with monolithically integrated electronics. Such platforms can become the basis of optoelectronic biomedical systems including implants and lab-on-chip systems.

  20. Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

    PubMed

    Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

    2014-12-21

    While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

  1. A hemispherical electronic eye camera based on compressible silicon optoelectronics.

    PubMed

    Ko, Heung Cho; Stoykovich, Mark P; Song, Jizhou; Malyarchuk, Viktor; Choi, Won Mook; Yu, Chang-Jae; Geddes, Joseph B; Xiao, Jianliang; Wang, Shuodao; Huang, Yonggang; Rogers, John A

    2008-08-07

    The human eye is a remarkable imaging device, with many attractive design features. Prominent among these is a hemispherical detector geometry, similar to that found in many other biological systems, that enables a wide field of view and low aberrations with simple, few-component imaging optics. This type of configuration is extremely difficult to achieve using established optoelectronics technologies, owing to the intrinsically planar nature of the patterning, deposition, etching, materials growth and doping methods that exist for fabricating such systems. Here we report strategies that avoid these limitations, and implement them to yield high-performance, hemispherical electronic eye cameras based on single-crystalline silicon. The approach uses wafer-scale optoelectronics formed in unusual, two-dimensionally compressible configurations and elastomeric transfer elements capable of transforming the planar layouts in which the systems are initially fabricated into hemispherical geometries for their final implementation. In a general sense, these methods, taken together with our theoretical analyses of their associated mechanics, provide practical routes for integrating well-developed planar device technologies onto the surfaces of complex curvilinear objects, suitable for diverse applications that cannot be addressed by conventional means.

  2. Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer.

    PubMed

    Song, Junfeng; Luo, Xianshu; Tu, Xiaoguang; Jia, Lianxi; Fang, Qing; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

    2014-08-11

    We propose a novel three-dimensional (3D) monolithic optoelectronic integration platform. Such platform integrates both electrical and photonic devices in a bulk silicon wafer, which eliminates the high-cost silicon-on-insulator (SOI) wafer and is more suitable for process requirements of electronic and photonic integrated circuits (ICs). For proof-of-concept, we demonstrate a three-dimensional photodetector and WDM receiver system. The Ge is grown on a 8-inch bulk silicon wafer while the optical waveguide is defined in a SiN layer which is deposited on top of it, with ~4 µm oxide sandwiched in between. The light is directed to the Ge photodetector from the SiN waveguide vertically by using grating coupler with a Aluminum mirror on top of it. The measured photodetector responsivity is ~0.2 A/W and the 3-dB bandwidth is ~2 GHz. Using such vertical-coupled photodetector, we demonstrated an 8-channel receiver by integrating a 1 × 8 arrayed waveguide grating (AWG). High-quality optical signal detection with up to 10 Gbit/s data rate is demonstrated, suggesting a 80 Gbit/s throughput. Such receiver can be applied to on-chip optical interconnect, DRAM interface, and telecommunication systems.

  3. Ultracompact 100 Gbps coherent receiver monolithically integrated on silicon

    NASA Astrophysics Data System (ADS)

    Tu, Zhijuan; Gong, Pan; Zhou, Zhiping; Wang, Xingjun

    2016-04-01

    This work describes an ultracompact coherent receiver monolithically integrated on silicon. The coherent receiver integrates one 1D grating coupler, one 2D grating coupler, two 90° hybrids, and eight Ge photodetectors in an area of only 1.3 × 1.4 mm2, which is about half the size of the smallest previously reported receiver. The design and performances of the components and the integrated coherent receiver are presented. The receiving of 100 Gbps polarization-division-multiplexed quadrature phase-shift keying (PDM-QPSK) signals is also successfully demonstrated.

  4. Initial results for the silicon monolithically interconnected solar cell product

    NASA Technical Reports Server (NTRS)

    Dinetta, L. C.; Shreve, K. P.; Cotter, J. E.; Barnett, A. M.

    1995-01-01

    This proprietary technology is based on AstroPower's electrostatic bonding and innovative silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and then thinned to final thicknesses less than 25 micron. These devices are based on the features of a thin, light-trapping silicon solar cell: high voltage, high current, light weight (high specific power) and high radiation resistance. Monolithic interconnection allows the fabrication costs on a per watt basis to be roughly independent of the array size, power or voltage, therefore, the cost effectiveness to manufacture solar cell arrays with output powers ranging from milliwatts up to four watts and output voltages ranging from 5 to 500 volts will be similar. This compares favorably to conventionally manufactured, commercial solar cell arrays, where handling of small parts is very labor intensive and costly. In this way, a wide variety of product specifications can be met using the same fabrication techniques. Prototype solar cells have demonstrated efficiencies greater than 11%. An open-circuit voltage of 5.4 volts, fill factor of 65%, and short-circuit current density of 28 mA/sq cm at AM1.5 illumination are typical. Future efforts are being directed to optimization of the solar cell operating characteristics as well as production processing. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. These features make this proprietary technology an excellent candidate for a large number of consumer products.

  5. Assessment of goat milk adulteration with a label-free monolithically integrated optoelectronic biosensor.

    PubMed

    Angelopoulou, Μichailia; Botsialas, Athanasios; Salapatas, Alexandros; Petrou, Panagiota S; Haasnoot, Willem; Makarona, Eleni; Jobst, Gerhard; Goustouridis, Dimitrios; Siafaka-Kapadai, Athanasia; Raptis, Ioannis; Misiakos, Konstantinos; Kakabakos, Sotirios E

    2015-05-01

    The label-free detection of bovine milk in goat milk through a miniaturized optical biosensor is presented. The biosensor consists of ten planar silicon nitride waveguide Broad-Band Mach-Zehnder interferometers (BB-MZIs) monolithically integrated and self-aligned with their respective silicon LEDs on the same Si chip. The BB-MZIs were transformed to biosensing transducers by functionalizing their sensing arm with bovine k-casein. Measurements were performed by continuously recording the transmission spectra of each interferometer through an external spectrometer. The amount of bovine milk in goat milk was determined through a competitive immunoassay by passing over the sensor mixtures of anti-k-casein antibodies with the calibrators or the samples. The output spectra of each BB-MZI recorded during the reaction were subjected to Discrete Fourier Transform in order to convert the observed spectral shifts to phase shifts in the wavenumber domain. The method had a detection limit of 0.04 % (v/v) bovine milk in goat milk, dynamic range 0.1-1.0 % (v/v), recoveries 93-110 %, and intra- and inter-assay coefficients of variation less than 12 and 15 %, respectively. The proposed biosensor compared well in terms of analytical performance with a competitive ELISA developed using the same monoclonal antibodies. Nevertheless, the duration of the biosensor assay was 10 min whereas the ELISA required 2 h. Thus, the fast and sensitive determinations along with the small size of the sensor make it ideal for incorporation into portable devices for assessment of goat or ewe's milk adulteration with bovine milk at the point-of-need.

  6. Detection of ochratoxin A in beer samples with a label-free monolithically integrated optoelectronic biosensor.

    PubMed

    Pagkali, Varvara; Petrou, Panagiota S; Salapatas, Alexandros; Makarona, Eleni; Peters, Jeroen; Haasnoot, Willem; Jobst, Gerhard; Economou, Anastasios; Misiakos, Konstantinos; Raptis, Ioannis; Kakabakos, Sotirios E

    2017-02-05

    An optical biosensor for label-free detection of ochratoxin A (OTA) in beer samples is presented. The biosensor consists of an array of ten Mach-Zehnder interferometers (MZIs) monolithically integrated along with their respective broad-band silicon light sources on the same Si chip (37mm(2)). The chip was transformed to biosensor by functionalizing the MZIs sensing arms with an OTA-ovalbumin conjugate. OTA determination was performed by pumping over the chip mixtures of calibrators or samples with anti-OTA antibody following a competitive immunoassay format. An external miniaturized spectrometer was employed to continuously record the transmission spectra of each interferometer. Spectral shifts obtained due to immunoreaction were transformed to phase shifts through Discrete Fourier Transform. The assay had a detection limit of 2.0ng/ml and a dynamic range 4.0-100ng/ml in beer samples, recoveries ranging from 90.6 to 116%, and intra- and inter-assay coefficients of variation of 9% and 14%, respectively. The results obtained with the sensor using OTA-spiked beer samples spiked were in good agreement with those obtained by an ELISA developed using the same antibody. The good analytical performance of the biosensor and the small size of the proposed chip provide for the development of a portable instrument for point-of-need determinations.

  7. Monolithic amorphous silicon modules on continuous polymer substrate

    SciTech Connect

    Grimmer, D.P. )

    1992-03-01

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  8. 112-Gb/s monolithic PDM-QPSK modulator in silicon.

    PubMed

    Dong, Po; Xie, Chongjin; Chen, Long; Buhl, Lawrence L; Chen, Young-Kai

    2012-12-10

    We present a monolithic dual-polarization quadrature phase-shift keying (QPSK) modulator based on a silicon photonic integrated circuit (PIC). This PIC consists of four high-speed silicon modulators, a polarization rotator, and a polarization beam combiner. A 112-Gb/s polarization-division-multiplexed (PDM) QPSK modulation is successfully demonstrated.

  9. Prediction of silicon-based layered structures for optoelectronic applications.

    PubMed

    Luo, Wei; Ma, Yanming; Gong, Xingao; Xiang, Hongjun

    2014-11-12

    A method based on the particle swarm optimization algorithm is presented to design quasi-two-dimensional materials. With this development, various single-layer and bilayer materials of C, Si, Ge, Sn, and Pb were predicted. A new Si bilayer structure is found to have a more favored energy than the previously widely accepted configuration. Both single-layer and bilayer Si materials have small band gaps, limiting their usages in optoelectronic applications. Hydrogenation has therefore been used to tune the electronic and optical properties of Si layers. We discover two hydrogenated materials of layered Si8H2 and Si6H2 possessing quasidirect band gaps of 0.75 and 1.59 eV, respectively. Their potential applications for light-emitting diode and photovoltaics are proposed and discussed. Our study opened up the possibility of hydrogenated Si layered materials as next-generation optoelectronic devices.

  10. Prediction of Silicon-Based Layered Structures for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Luo, Wei; Ma, Yanming; Gong, Xingao; Xiang, Hongjun; CCMG Team

    2015-03-01

    A method based on the particle swarm optimization (PSO) algorithm is presented to design quasi-two-dimensional (Q2D) materials. With this development, various single-layer and bi-layer materials in C, Si, Ge, Sn, and Pb were predicted. A new Si bi-layer structure is found to have a much-favored energy than the previously widely accepted configuration. Both single-layer and bi-layer Si materials have small band gaps, limiting their usages in optoelectronic applications. Hydrogenation has therefore been used to tune the electronic and optical properties of Si layers. We discover two hydrogenated materials of layered Si8H2andSi6H2 possessing quasi-direct band gaps of 0.75 eV and 1.59 eV, respectively. Their potential applications for light emitting diode and photovoltaics are proposed and discussed. Our study opened up the possibility of hydrogenated Si layered materials as next-generation optoelectronic devices.

  11. A monolithic integrated micro direct methanol fuel cell based on sulfo functionalized porous silicon

    NASA Astrophysics Data System (ADS)

    Wang, M.; Lu, Y. X.; Liu, L. T.; Wang, X. H.

    2016-11-01

    In this paper, we demonstrate a monolithic integrated micro direct methanol fuel cell (μDMFC) for the first time. The monolithic integrated μDMFC combines proton exchange membrane (PEM) and Pt nanocatalysts, in which PEM is achieved by the functionalized porous silicon membrane and 3D Pt nanoflowers being synthesized in situ on it as catalysts. Sulfo groups functionalized porous silicon membrane serves as a PEM and a catalyst support simultaneously. The μDMFC prototype achieves an open circuit voltage of 0.3 V, a maximum power density of 5.5 mW/cm2. The monolithic integrated μDMFC offers several desirable features such as compatibility with micro fabrication techniques, an undeformable solid PEM and the convenience of assembly.

  12. Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides.

    PubMed

    Agazzi, Laura; Bradley, Jonathan D B; Dijkstra, Meindert; Ay, Feridun; Roelkens, Gunther; Baets, Roel; Wörhoff, Kerstin; Pollnau, Markus

    2010-12-20

    Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

  13. Plastic deformation of silicon nitride/boron nitride fibrous monoliths.

    SciTech Connect

    de Arellano-Lopez, A. R.; Lopez-Pombero, S.; Dominguez-Rodriguez, A.; Routbort, J. L.; Singh, D.; Goretta, K. C.; Energy Technology; Univ. de Sevilla

    2001-02-01

    High-temperature compressive creep of unidirectional Si{sub 3}N{sub 4}/BN fibrous monoliths has been investigated at 1300-1500 C in an inert atmosphere. The results were then compared to those for deformation of the Si{sub 3}N{sub 4} and BN base materials. Plasticity of the fibrous monoliths was limited to very low stresses when the Si{sub 3}N{sub 4} cells were oriented perpendicular to the stress axis because the BN cell boundaries failed, followed by failure of the Si{sub 3}N{sub 4} cells. In the fibrous monolith in which cells were oriented parallel to the stress axis, steady-state deformation controlled by deformation of the Si{sub 3}N{sub 4} cells was achieved.

  14. Self-assembled III-V quantum dots: potential for silicon optoelectronics

    NASA Technical Reports Server (NTRS)

    Leon, R.

    2001-01-01

    The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

  15. Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy

    SciTech Connect

    Nataraj, L.; Sustersic, N.; Coppinger, M.; Gerlein, L. F.; Kolodzey, J.; Cloutier, S. G.

    2010-03-22

    We report on the structural and optoelectronic properties of self-assembled germanium-rich islands grown on silicon using molecular beam epitaxy. Raman, photocurrent, photoluminescence, and transient optical spectroscopy measurements suggest significant built-in strains and a well-defined interface with little intermixing between the islands and the silicon. The shape of these islands depends on the growth conditions and includes pyramid, dome, barn-shaped, and superdome islands. Most importantly, we demonstrate that these germanium-rich islands provide efficient light emission at telecommunication wavelengths on a complementary metal-oxide semiconductor-compatible platform.

  16. Silver oxide nanostructure prepared on porous silicon for optoelectronic application

    NASA Astrophysics Data System (ADS)

    Hassan, Marwa Abdul Muhsien; Agool, Ibrahim Ramdan; Raoof, Lamyaa Mohammed

    2014-04-01

    The thermal evaporation system type (Edwards) has been used to evaporate high purity (99.9 %) silver on glass, n- and p-type silicon and porous silicon substrates at room temperature under low pressure (about 10-6 torr) for different thickness (50, 75, 100, 125 and 150 nm). Using a rapid thermal oxidation of Ag film at oxidation temperature 350 °C and different oxidation times, Ag2O thin film was prepared. The structural properties of Ag2O film were investigated and compared with other published results. The structural investigation showed that the films formed at thickness 100 nm showed (111) strong reflection along with weak reflections of (101) corresponding to the growth of single phase Ag2O with cubic structure. Dark and illuminated I-V of p-Ag2O/ p-Si, p-Ag2O/ n-Si, Al/ p-PSi/Al, Al/ n-PSi/Al, p-Ag2O/ p-PSi/c-Si and p-Ag2O/ n-PSi/c-Si heterojunction were investigated, discussed and prepared at optimum condition (oxidation temperature 350 °C and 90 s oxidation time with thickness 100 nm). Ohmic contacts were fabricated by evaporating 99.999 purity silver wires for back and aluminum wires for front contact, respectively.

  17. Silver oxide nanostructure prepared on porous silicon for optoelectronic application

    NASA Astrophysics Data System (ADS)

    Hassan, Marwa Abdul Muhsien; Agool, Ibrahim Ramdan; Raoof, Lamyaa Mohammed

    2013-04-01

    The thermal evaporation system type (Edwards) has been used to evaporate high purity (99.9 %) silver on glass, n- and p-type silicon and porous silicon substrates at room temperature under low pressure (about 10-6 torr) for different thickness (50, 75, 100, 125 and 150 nm). Using a rapid thermal oxidation of Ag film at oxidation temperature 350 °C and different oxidation times, Ag2O thin film was prepared. The structural properties of Ag2O film were investigated and compared with other published results. The structural investigation showed that the films formed at thickness 100 nm showed (111) strong reflection along with weak reflections of (101) corresponding to the growth of single phase Ag2O with cubic structure. Dark and illuminated I-V of p-Ag2O/p-Si, p-Ag2O/n-Si, Al/p-PSi/Al, Al/n-PSi/Al, p-Ag2O/p-PSi/c-Si and p-Ag2O/n-PSi/c-Si heterojunction were investigated, discussed and prepared at optimum condition (oxidation temperature 350 °C and 90 s oxidation time with thickness 100 nm). Ohmic contacts were fabricated by evaporating 99.999 purity silver wires for back and aluminum wires for front contact, respectively.

  18. Elevated temperature mechanical behavior of monolithic and SiC whisker-reinforced silicon nitrides

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Choi, Sung R.; Sanders, William A.; Fox, Dennis S.

    1991-01-01

    The mechanical behavior of a 30 volume percent SiC whisker reinforced silicon nitride and a similar monolithic silicon nitride were measured at several temperatures. Measurements included strength, fracture toughness, crack growth resistance, dynamic fatigue susceptibility, post oxidation strength, and creep rate. Strength controlling defects were determined with fractographic analysis. The addition of SiC whiskers to silicon nitride did not substantially improve the strength, fracture toughness, or crack growth resistance. However, the fatigue resistance, post oxidation strength, and creep resistance were diminished by the whisker addition.

  19. A new silicon phase with direct band gap and novel optoelectronic properties

    SciTech Connect

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-09-23

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications.

  20. A new silicon phase with direct band gap and novel optoelectronic properties

    DOE PAGES

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; ...

    2015-09-23

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising materialmore » for optoelectronic applications.« less

  1. Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics.

    PubMed

    Zhuang, Q D; Alradhi, H; Jin, Z M; Chen, X R; Shao, J; Chen, X; Sanchez, Ana M; Cao, Y C; Liu, J Y; Yates, P; Durose, K; Jin, C J

    2017-03-10

    InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

  2. Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhuang, Q. D.; Alradhi, H.; Jin, Z. M.; Chen, X. R.; Shao, J.; Chen, X.; Sanchez, Ana M.; Cao, Y. C.; Liu, J. Y.; Yates, P.; Durose, K.; Jin, C. J.

    2017-03-01

    InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

  3. Light coupling between vertical III-As nanowires and planar Si photonic waveguides for the monolithic integration of active optoelectronic devices on a Si platform.

    PubMed

    Giuntoni, Ivano; Geelhaar, Lutz; Bruns, Jürgen; Riechert, Henning

    2016-08-08

    We present a new concept for the optical interfacing between vertical III-As nanowires and planar Si waveguides. The nanowires are arranged in a two-dimensional array which forms a grating structure on top of the waveguide. This grating enables light coupling in both directions between the components made from the two different material classes. Numerical simulations show that this concept permits a light extraction efficiency from the waveguide larger than 45% and a light insertion efficiency larger than 35%. This new approach would allow the monolithic integration of nanowire-based active optoelectronics devices, like photodetectors and light sources, on the Si photonics platform.

  4. Optoelectronic properties of Black-Silicon generated through inductively coupled plasma (ICP) processing for crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Hirsch, Jens; Gaudig, Maria; Bernhard, Norbert; Lausch, Dominik

    2016-06-01

    The optoelectronic properties of maskless inductively coupled plasma (ICP) generated black silicon through SF6 and O2 are analyzed by using reflection measurements, scanning electron microscopy (SEM) and quasi steady state photoconductivity (QSSPC). The results are discussed and compared to capacitively coupled plasma (CCP) and industrial standard wet chemical textures. The ICP process forms parabolic like surface structures in a scale of 500 nm. This surface structure reduces the average hemispherical reflection between 300 and 1120 nm up to 8%. Additionally, the ICP texture shows a weak increase of the hemispherical reflection under tilted angles of incidence up to 60°. Furthermore, we report that the ICP process is independent of the crystal orientation and the surface roughness. This allows the texturing of monocrystalline, multicrystalline and kerf-less wafers using the same parameter set. The ICP generation of black silicon does not apply a self-bias on the silicon sample. Therefore, the silicon sample is exposed to a reduced ion bombardment, which reduces the plasma induced surface damage. This leads to an enhancement of the effective charge carrier lifetime up to 2.5 ms at 1015 cm-3 minority carrier density (MCD) after an atomic layer deposition (ALD) with Al2O3. Since excellent etch results were obtained already after 4 min process time, we conclude that the ICP generation of black silicon is a promising technique to substitute the industrial state of the art wet chemical textures in the solar cell mass production.

  5. Surface acoustic wave/silicon monolithic sensor/processor

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.; Nouhi, A.; Kilmer, R.; Fathimulla, M. A.; Mehter, E.

    1983-01-01

    A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

  6. Monolithic III–V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects

    PubMed Central

    Li, Ning; Liu, Ke; Sorger, Volker J.; Sadana, Devendra K.

    2015-01-01

    Monolithic integration of III–V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We propose and investigate plasmonic III–V nanolasers as monolithically integrated light source on Si chips due to many advantages. First, these III–V plasmonic light sources can be directly grown on Si substrates free of crystallographic defects due to the submicron cavity footprint (250 nm × 250 nm) being smaller than the average defect free region size of the heteroepitaxial III–V material on Si. Secondly, the small lateral and vertical dimensions facilitate process co-integration with Si complementary metal-oxide-semiconductor (CMOS) in the front end of the line. Thirdly, combining with monolithically integrated CMOS circuits with low device capacitance and parasitic capacitance, the nano-cavity optoelectronic devices consume orders of magnitude less power than the conventional lasers and reduce the energy consumption. Fourthly, the modulation bandwidth of the plasmonic light-sources is enhanced to significantly higher than conventional lasers due to enhanced photon state density and transition rate. In addition, we show that these device performance are very robust after taking into account the surface recombination and variations in device fabrication processes. PMID:26369698

  7. Optoelectronic characteristics and applications of helium ion-implanted silicon devices

    NASA Astrophysics Data System (ADS)

    Liu, Yang

    Silicon-on-insulator (SOI) wafers are an attractive platform for the fabrication of planar lightwave circuits (PLCs) because they offer the potential for low-cost fabrication using mature complementary metal--organic--semiconductor (CMOS) compatible processes developed in the microelectronics industry. At the wavelengths of interest for telecommunications, SOI waveguides can have low optical losses (0.1dB/cm). Besides, the strong optical confinement offered by the high index contrast between silicon (Si) (n=3.45) and silicon dioxide (SiO2) (n=1.45) makes it possible to scale photonic devices to sub-micron level. In addition, the high optical intensity arising from the strong optical confinement inside the waveguide makes it possible to observe nonlinear optical effects, such as Raman and Kerr effects, in chip-scale devices. Helium ion implantation can not only reduce the free-carrier loss, but can also enhance the detection responsivity of below-bandgap wavelengths (1440 1590 nm). We propose and demonstrate an in-line channel power monitor (ICPM) based on helium ion implanted silicon waveguides. The implanted waveguide can detect light at 1440 1590 nm which are normally not detectable by silicon. We study the enhanced photoresponse of helium ion implanted waveguide samples which were annealed at different temperatures and for different durations. We then make use of the ICPM to perform a system application, called optical-burst-and-transient-equalizer (OBTE). The OBTE may provide a compact and low-cost solution to compensate gain-transient, gain-spectrum-tilt and to equalize the upstream packet amplitude in erbium doped fiber amplifier (EDFA) amplified hybrid dense-wavelength-division-multiplexed (DWDM) and time-division-multiplexed (TDM) passive-optical-networks (PONs). The OBTE may be monolithically integrated on SOI platform and is potentially low cost and compact. The OBTE can compensate complicated gain slope shape, which may be generated in cascaded EDFAs or

  8. Surface acoustic waves/silicon monolithic sensor processor

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.; Fathimulla, M. A.; Mehter, E. A.

    1981-01-01

    Progress is reported in the creation of a two dimensional Fourier transformer for optical images based on the zinc oxide on silicon technology. The sputtering of zinc oxide films using a micro etch system and the possibility of a spray-on technique based on zinc chloride dissolved in alcohol solution are discussed. Refinements to techniques for making platinum silicide Schottky barrier junctions essential for constructing the ultimate convolver structure are described.

  9. On-chip generation and demultiplexing of quantum correlated photons using a silicon-silica monolithic photonic integration platform.

    PubMed

    Matsuda, Nobuyuki; Karkus, Peter; Nishi, Hidetaka; Tsuchizawa, Tai; Munro, William J; Takesue, Hiroki; Yamada, Koji

    2014-09-22

    We demonstrate the generation and demultiplexing of quantum correlated photons on a monolithic photonic chip composed of silicon and silica-based waveguides. Photon pairs generated in a nonlinear silicon waveguide are successfully separated into two optical channels of an arrayed-waveguide grating fabricated on a silica-based waveguide platform.

  10. Design and characterization of ultra-stretchable monolithic silicon fabric

    SciTech Connect

    Rojas, J. P.; Hussain, M. M.; Arevalo, A.; Foulds, I. G.

    2014-10-13

    Stretchable electronic systems can play instrumental role for reconfigurable macro-electronics such as distributed sensor networks for wearable and bio-integrated electronics. Typically, polymer composite based materials and its deterministic design as interconnects are used to achieve such systems. Nonetheless, non-polymeric inorganic silicon is the predominant material for 90% of electronics. Therefore, we report the design and fabrication of an all silicon based network of hexagonal islands connected through spiral springs to form an ultra-stretchable arrangement for complete compliance to highly asymmetric shapes. Several design parameters are considered and their validation is carried out through finite element analysis. The fabrication process is based on conventional microfabrication techniques and the measured stretchability is more than 1000% for single spirals and area expansions as high as 30 folds in arrays. The reported method can provide ultra-stretchable and adaptable electronic systems for distributed network of high-performance macro-electronics especially useful for wearable electronics and bio-integrated devices.

  11. Optoelectronic optimization of mode selective converter based on liquid crystal on silicon

    NASA Astrophysics Data System (ADS)

    Wang, Yongjiao; Liang, Lei; Yu, Dawei; Fu, Songnian

    2016-03-01

    We carry out comprehensive optoelectronic optimization of mode selective converter used for the mode division multiplexing, based on liquid crystal on silicon (LCOS) in binary mode. The conversion error of digital-to-analog (DAC) is investigated quantitatively for the purpose of driving the LCOS in the application of mode selective conversion. Results indicate the DAC must have a resolution of 8-bit, in order to achieve high mode extinction ratio (MER) of 28 dB. On the other hand, both the fast axis position error of half-wave-plate (HWP) and rotation angle error of Faraday rotator (FR) have negative influence on the performance of mode selective conversion. However, the commercial products provide enough angle error tolerance for the LCOS-based mode selective converter, taking both of insertion loss (IL) and MER into account.

  12. Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor.

    PubMed

    Song, Junfeng; Luo, Xianshu; Kee, Jack Sheng; Han, Kyungsup; Li, Chao; Park, Mi Kyoung; Tu, Xiaoguang; Zhang, Huijuan; Fang, Qing; Jia, Lianxi; Yoon, Yong-Jin; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

    2013-07-29

    We demonstrate a silicon-based optoelectronic integrated circuit (OEIC) for label-free bio/chemical sensing application. Such on-chip OEIC sensor system consists of optical grating couplers for vertical light coupling into silicon waveguides, a thermal-tunable microring as a tunable filter, an exposed microring as an optical label-free sensor, and a Ge photodetector for a direct electrical readout. Different from the conventional wavelength-scanning method, we adopt low-cost broadband ASE light source, together with the on-chip tunable filter to generate sliced light source. The effective refractive index change of the sensing microring induced by the sensing target is traced by scanning the supplied electrical power applied onto the tracing microring, and the detected electrical signal is read out by the Ge photodetector. For bulk refractive index sensing, we demonstrate using such OEIC sensing system with a sensitivity of ~15 mW/RIU and a detection limit of 3.9 μ-RIU, while for surface sensing of biotin-streptavidin, we obtain a surface mass sensitivity of S(m) = ~192 µW/ng·mm(-2) and a surface detection limit of 0.3 pg/mm(2). The presented OEIC sensing system is suitable for point-of-care applications.

  13. Polymer-silicon nanosheet composites: bridging the way to optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Lyuleeva, Alina; Helbich, Tobias; Rieger, Bernhard; Lugli, Paolo

    2017-04-01

    The fabrication of electronic devices from sensitive, functional, two-dimensional (2D) nanomaterials with anisotropic structural properties has attracted much attention. Many theoretical and experimental studies have been performed; however, such materials have not been used in applications. In this context, the focus has shifted toward the study and synthesis of new materials. Freestanding hydrogen-terminated silicon nanosheets (SiNSs) are a new class of material with outstanding (opto)electronic properties (e.g. photoluminescence at approximately 510 nm) (Nakano 2014 J. Ceram. Soc. Japan 122 748). SiNSs are promising candidates for use in nanoelectronic devices and flexible electronics. Additional reasons for interest in such nanomaterials are their structural anisotropy and the fact that they are made from silicon. Here, we present examples for the application of functionalized SiNS-based composites as active materials for photonic sensors. The implementation of SiNSs in a covalent nanocomposite not only improves their stability but also facilitates subsequent device fabrication. Thus, SiNSs can be used in a straightforward setup preparation procedure. We show that the modification of novel Si-based 2D nanosheets with selected organic components not only opens a new field of photosensitive applications but also improves the processability of these nanosheets (Niu et al 2014 Sci. Rep. 4 4810, Chimene et al 2015 Adv. Mater. 27 7261).

  14. A monolithic electrically-injected nanowire array edge-emitting laser on (001) silicon

    NASA Astrophysics Data System (ADS)

    Stark, E.; Frost, T.; Jahangir, S.; Hazari, A.; Deshpande, S.; Bhattacharya, P.

    2015-03-01

    A silicon-based laser remains an important goal in science and technology. Unfortunately silicon is ill-suited as a light-emitter, prompting the need for alternative high quality light sources integrated with silicon. One such alternative, presented here, is a monolithic III-N edge-emitting laser comprised of a planarized nanowire array. Nanowire heterostructures with InGaN/GaN disk-in-nanowire active regions were grown on (001)silicon and planarized with parylene, forming a composite slab heterostructure supporting a guided mode propagating transverse to the growth direction. From this composite slab, ridge-geometry lasers were fabricated. Lasers with emission at 533 nm (green) and 610 nm (red) are presented here. The lasers are characterized by Jth = 1.76 kA/cm2 (green) and 2.94kA/cm2 (red) under continuous wave current injection. The green lasers have device lifetime of ~7000 hrs. Small-signal modulation measurements have also been performed. The -3dB modulation bandwidth of the green laser is 5.7 GHz.

  15. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product

    NASA Astrophysics Data System (ADS)

    Kang, Yimin; Liu, Han-Din; Morse, Mike; Paniccia, Mario J.; Zadka, Moshe; Litski, Stas; Sarid, Gadi; Pauchard, Alexandre; Kuo, Ying-Hao; Chen, Hui-Wen; Zaoui, Wissem Sfar; Bowers, John E.; Beling, Andreas; McIntosh, Dion C.; Zheng, Xiaoguang; Campbell, Joe C.

    2009-01-01

    Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources. It has often been assumed, however, that their performance is inferior to InP-based devices. Although this is true in most cases, one of the exceptions is the area of avalanche photodetectors, where silicon's material properties allow for high gain with less excess noise than InP-based avalanche photodetectors and a theoretical sensitivity improvement of 3 dB or more. Here, we report a monolithically grown germanium/silicon avalanche photodetector with a gain-bandwidth product of 340 GHz, a keff of 0.09 and a sensitivity of -28 dB m at 10 Gb s-1. This is the highest reported gain-bandwidth product for any avalanche photodetector operating at 1,300 nm and a sensitivity that is equivalent to mature, commercially available III-V compound avalanche photodetectors. This work paves the way for the future development of low-cost, CMOS-based germanium/silicon avalanche photodetectors operating at data rates of 40 Gb s-1 or higher.

  16. Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources

    NASA Astrophysics Data System (ADS)

    Lee, Wook-Jae; Kim, Hyunseok; Farrell, Alan C.; Senanayake, Pradeep; Huffaker, Diana L.

    2016-02-01

    A simple and unique laser scheme comprised of a finite-size nanopillar array on a silicon-on-insulator grating layer is introduced for realizing an on-chip monolithically integrated light source. A photonic band-edge mode, confined by the grating substrate in the vertical direction, shows a quality factor as high as 4000. We show that the proposed laser cavity allows direct coupling into a waveguide, which is essential for monolithic integration. In addition, III-V semiconductor nanopillars are grown on a silicon-on-insulator grating substrate in order to demonstrate the feasibility of epitaxy on 3D surfaces. These results provide a practical solution for on-chip integration of a monolithic light source.

  17. Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells

    NASA Astrophysics Data System (ADS)

    Werner, Jérémie; Walter, Arnaud; Rucavado, Esteban; Moon, Soo-Jin; Sacchetto, Davide; Rienaecker, Michael; Peibst, Robby; Brendel, Rolf; Niquille, Xavier; De Wolf, Stefaan; Löper, Philipp; Morales-Masis, Monica; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

    2016-12-01

    Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells.

  18. Elasticity and inelasticity of silicon nitride/boron nitride fibrous monoliths.

    SciTech Connect

    Smirnov, B. I.; Burenkov, Yu. A.; Kardashev, B. K.; Singh, D.; Goretta, K. C.; de Arellano-Lopez, A. R.; Energy Technology; Russian Academy of Sciences; Univer. de Sevilla

    2001-01-01

    A study is reported on the effect of temperature and elastic vibration amplitude on Young's modulus E and internal friction in Si{sub 3}N{sub 4} and BN ceramic samples and Si{sub 3}N{sub 4}/BN monoliths obtained by hot pressing of BN-coated Si{sub 3}N{sub 4} fibers. The fibers were arranged along, across, or both along and across the specimen axis. The E measurements were carried out under thermal cycling within the 20-600 C range. It was found that high-modulus silicon-nitride specimens possess a high thermal stability; the E(T) dependences obtained under heating and cooling coincide well with one another. The low-modulus BN ceramic exhibits a considerable hysteresis, thus indicating evolution of the defect structure under the action of thermoelastic (internal) stresses. Monoliths demonstrate a qualitatively similar behavior (with hysteresis). This behavior of the elastic modulus is possible under microplastic deformation initiated by internal stresses. The presence of microplastic shear in all the materials studied is supported by the character of the amplitude dependences of internal friction and the Young's modulus. The experimental data obtained are discussed in terms of a model in which the temperature dependences of the elastic modulus and their features are accounted for by both microplastic deformation and nonlinear lattice-atom vibrations, which depend on internal stresses.

  19. Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon

    NASA Astrophysics Data System (ADS)

    Heo, Junseok; Guo, Wei; Bhattacharya, Pallab

    2011-01-01

    Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low density (˜108 cm-2) are grown on Si by plasma-assisted molecular beam epitaxy. High resolution transmission electron microscopy images reveal that the nanowires are of wurtzite structure and they have no observable defects. A single nanowire laser fabricated on Si is characterized by a lasing transition at λ =371.3 nm with a linewidth of 0.55 nm. The threshold is observed at a pump power density of ˜120 kW/cm2 and the spontaneous emission factor β is estimated to be 0.08.

  20. Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon.

    PubMed

    Franco, Andrea; Geissbühler, Jonas; Wyrsch, Nicolas; Ballif, Christophe

    2014-04-04

    Microchannel plates are vacuum-based electron multipliers for particle--in particular, photon--detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80-120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200 °C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process.

  1. Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip.

    PubMed

    Ramírez, J M; Ferrarese Lupi, F; Berencén, Y; Anopchenko, A; Colonna, J P; Jambois, O; Fedeli, J M; Pavesi, L; Prtljaga, N; Rivallin, P; Tengattini, A; Navarro-Urrios, D; Garrido, B

    2013-03-22

    An integrated erbium-based light emitting diode has been realized in a waveguide configuration allowing 1.54 μm light signal routing in silicon photonic circuits. This injection device is based on an asymmetric horizontal slot waveguide where the active slot material is Er(3+) in SiO2 or Er(3+) in Si-rich oxide. The active horizontal slot waveguide allows optical confinement, guiding and lateral extraction of the light for on-chip distribution. Light is then coupled through a taper section to a passive Si waveguide terminated by a grating which extracts (or inserts) the light signal for measuring purposes. We measured an optical power density in the range of tens of μW/cm(2) which follows a super-linear dependence on injected current density. When the device is biased at high current density, upon a voltage pulse (pump signal), free-carrier and space charge absorption losses become large, attenuating a probe signal by more than 60 dB/cm and thus behaving conceptually as an electro-optical modulator. The integrated device reported here is the first example, still to be optimized, of a fundamental block to realize an integrated silicon photonic circuit with monolithic integration of the light emitter.

  2. Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon

    PubMed Central

    Franco, Andrea; Geissbühler, Jonas; Wyrsch, Nicolas; Ballif, Christophe

    2014-01-01

    Microchannel plates are vacuum-based electron multipliers for particle—in particular, photon— detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80–120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200°C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process. PMID:24698955

  3. Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

    PubMed

    Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

    2012-07-17

    Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

  4. Spark plasma sintering of monolithic silicon carbide and silicon carbide-graphene composite

    NASA Astrophysics Data System (ADS)

    Sharfuzzaman, Amin Mohammad

    Ball milled alpha -- SiC (2.73 microm) was consolidated rapidly using spark plasma sintering at 1800, 1900, and 2000 °C under 90 MPa pressure and 20 min of soaking time. Relatively high densification (>90% relative density) was achieved at 2000 °C. The densification stages were identified, and a three stage densification process was proposed. The formal densification study was performed using the model proposed by Ashby, and the dominant mechanism for densification was determined to be grain boundary accommodated diffusion controlled creep. The formal grain growth mechanism was also investigated, and similar result was found. The value of stress exponent was calculated as 1.1, and the activation energy needed for final stage densification was found to be ≈ 427 - 500 KJ/mol. Also, nano-grain clustering was identified as an auxiliary mechanism from microstructural analysis. The reinforcement of SiC was done with 1, 2, and 3 vol.% graphene. Mechanical characterizations were performed on the reinforced ceramics, and inter-granular fracture was seen. Graphene didn't cause any improvement in hardness of SiC, but showed substantial improvement in flexural strength. Graphene proved to be very useful in restraining grain growth, but decreased the density of monolithic SiC.

  5. One-shot genetic analysis in monolithic Silicon/Pyrex microdevices.

    PubMed

    Potrich, C; Lunelli, L; Pasquardini, L; Sonn, D; Vozzi, D; Dallapiccola, R; Marocchi, L; Ferrante, I; Rossotto, O; Pederzolli, C

    2012-12-01

    Modern Lab-on-a-chip (LOC) platforms for genomic applications integrate several biological tasks in a single device. Combination of these processes into a single device minimizes sample loss and contamination problems as well as reducing analysis time and costs. Here we present a study of a microchip platform aimed at analyzing issues arising from the combination of different functions, such as DNA purification from blood, target amplification by PCR and DNA detection in a single silicon-based device. DNA purification is realized through two different strategies: 1) amine groups coating microchannel surfaces and 2) magnetic nanoparticles coated by chitosan. In the first strategy silicon/Pyrex microdevices coated with 3-aminopropyltriethoxysilane (APTES) or 3-2-(2-aminoethylamino)-ethylamino]-propyltrimethoxysilane (AEEA) were examined and their efficiency in human genomic DNA adsorption/desorption was evaluated. APTES treatment was the most suitable for the purification of a reasonable amount of DNA in a state suitable for the following PCR step. The second strategy has instead the main advantage of avoiding an elution step, since the DNA adsorbed on the magnetic nanoparticles can be used as PCR template. On-chip PCR was performed in a custom thermocycler, while the detection of PCR products was carried out by fluorescence reading. A complete genetic analysis was demonstrated on the monolithic silicon/Pyrex microchip, starting from less than 1 [Formula: see text]L of human whole blood and arriving at SNPs identification. The successful integration of DNA purification, amplification and detection on a single microdevice was proven without the need for biological passivation steps and possibly simplifying the realization of genomic detection devices.

  6. Development of silicon monolithic arrays for dosimetry in external beam radiotherapy

    NASA Astrophysics Data System (ADS)

    Bisello, Francesca; Menichelli, David; Scaringella, Monica; Talamonti, Cinzia; Zani, Margherita; Bucciolini, Marta; Bruzzi, Mara

    2015-10-01

    New tools for dosimetry in external beam radiotherapy have been developed during last years in the framework of the collaboration among the University of Florence, INFN Florence and IBA Dosimetry. The first step (in 2007) was the introduction in dosimetry of detector solutions adopted from high energy physics, namely epitaxial silicon as the base detector material and a guard ring in diode design. This allowed obtaining state of the art radiation hardness, in terms of sensitivity dependence on accumulated dose, with sensor geometry particularly suitable for the production of monolithic arrays with modular design. Following this study, a 2D monolithic array has been developed, based on 6.3×6.3 cm2 modules with 3 mm pixel pitch. This prototype has been widely investigated and turned out to be a promising tool to measure dose distributions of small and IMRT fields. A further linear array prototype has been recently design with improve spatial resolution (1 mm pitch) and radiation hardness. This 24 cm long device is constituted by 4×64 mm long modules. It features low sensitivity changes with dose (0.2%/kGy) and dose per pulse (±1% in the range 0.1-2.3 mGy/pulse, covering applications with flattened and unflattened photon fields). The detector has been tested with very satisfactory results as a tool for quality assurance of linear accelerators, with special regards to small fields, and proton pencil beams. In this contribution, the characterization of the linear array with unflattened MV X-rays, 60Co radiation and 226 MeV protons is reported.

  7. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics.

    PubMed

    Zhao, Chao; Ng, Tien Khee; ElAfandy, Rami T; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Ajia, Idris A; Roqan, Iman S; Janjua, Bilal; Shen, Chao; Eid, Jessica; Alyamani, Ahmed Y; El-Desouki, Munir M; Ooi, Boon S

    2016-07-13

    A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the "green gap" has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley-Read-Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment.

  8. Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

    NASA Astrophysics Data System (ADS)

    Al-Attili, Abdelrahman Z.; Kako, Satoshi; Husain, Muhammad K.; Gardes, Frederic Y.; Arimoto, Hideo; Higashitarumizu, Naoki; Iwamoto, Satoshi; Arakawa, Yasuhiko; Ishikawa, Yasuhiko; Saito, Shinichi

    2015-05-01

    High electron doping of germanium (Ge) is considered to be an important process to convert Ge into an optical gain material and realize a monolithic light source integrated on a silicon chip. Spin-on doping is a method that offers the potential to achieve high doping concentrations without affecting crystalline qualities over other methods such as ion implantation and in-situ doping during material growth. However, a standard spin-on doping recipe satisfying these requirements is not yet available. In this paper we examine spin-on doping of Ge-on-insulator (GOI) wafers. Several issues were identified during the spin-on doping process and specifically the adhesion between Ge and the oxide, surface oxidation during activation, and the stress created in the layers due to annealing. In order to mitigate these problems, Ge disks were first patterned by dry etching followed by spin-on doping. Even by using this method to reduce the stress, local peeling of Ge could still be identified by optical microscope imaging. Nevertheless, most of the Ge disks remained after the removal of the glass. According to the Raman data, we could not identify broadening of the lineshape which shows a good crystalline quality, while the stress is slightly relaxed. We also determined the linear increase of the photoluminescence intensity by increasing the optical pumping power for the doped sample, which implies a direct population and recombination at the gamma valley.

  9. Electrostatic actuated strain engineering in monolithically integrated VLS grown silicon nanowires

    NASA Astrophysics Data System (ADS)

    Wagesreither, Stefan; Bertagnolli, Emmerich; Kawase, Shinya; Isono, Yoshitada; Lugstein, Alois

    2014-11-01

    In this paper we demonstrate the fabrication and application of an electrostatic actuated tensile straining test (EATEST) device enabling strain engineering in individual suspended nanowires (NWs). Contrary to previously reported approaches, this special setup guarantees the application of pure uniaxial tensile strain with no shear component of the stress while e.g. simultaneously measuring the resistance change of the NW. To demonstrate the potential of this approach we investigated the piezoresistivity of about 3 μm long and 100 nm thick SiNWs but in the same way one can think about the application of such a device on other geometries, other materials beyond Si as well as the use of other characterization techniques beyond electrical measurements. Therefore single-crystal SiNWs were monolithically integrated in a comb drive actuated MEMS device based on a silicon-on-insulator (SOI) wafer using the vapor-liquid-solid (VLS) growth technique. Strain values were verified by a precise measurement of the NW elongation with scanning electron microscopy (SEM). Further we employed confocal μ-Raman microscopy for in situ, high spatial resolution measurements of the strain in individual SiNWs during electrical characterization. A giant piezoresistive effect was observed, resulting in a fivefold increase in conductivity for 3% uniaxially strained SiNWs. As the EATEST approach can be easily integrated into an existing Si technology platform this architecture may pave the way toward a new generation of nonconventional devices by leveraging the strain degree of freedom.

  10. Comparison of dynamic fatigue behavior between SiC whisker-reinforced composite and monolithic silicon nitrides

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Salem, Jonathan A.

    1991-01-01

    The dynamic fatigue behavior of 30 vol percent silicon nitride whisker-reinforced composite and monolithic silicon nitrides were determined as a function of temperature from 1100 to 1300 C in ambient air. The fatigue susceptibility parameter, n, decreased from 88.1 to 20.1 for the composite material, and from 50.8 to 40.4 for the monolithic, with increasing temperature from 1100 to 1300 C. A transition in the dynamic fatigue curve occurred for the composite material at a low stressing rate of 2 MPa/min at 1300 C, resulting in a very low value of n equals 5.8. Fractographic analysis showed that glassy phases in the slow crack growth region were more pronounced in the composite compared to the monolithic material, implying that SiC whisker addition promotes the formation of glass rich phases at the grain boundaries, thereby enhancing fatigue. These results indicate that SiC whisker addition to Si3 N4 matrix substantially deteriorates fatigue resistance inherent to the matrix base material for this selected material system.

  11. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, Shiu-Wing

    1998-01-01

    An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

  12. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, Shiu-Wing

    1997-01-01

    An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

  13. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, S.W.

    1998-06-16

    An illumination source is disclosed comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

  14. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, S.W.

    1997-02-25

    Disclosed is an illumination source comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

  15. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  16. Optoelectronic techniques for broadband switching

    NASA Astrophysics Data System (ADS)

    Su, S. F.; Jou, L.; Lenart, J.

    1988-01-01

    Optoelectronic switching employs a hybrid optical/electronic principle to perform the switching function and is applicable for either analog broadband or high-bit rate digital switching. The major advantages of optoelectronic switching include high isolation, low crosstalk, small physical size, light weight, and low power consumption. These advantages make optoelectronic switching an excellent candidate for on-board satellite switching. This paper describes a number of optoelectronic switching architectures. System components required for implementing these switching architectures are discussed. Performance of these architectures are evaluated by calculating their crosstalk, isolation, insertion loss, matrix size, drive power, throughput, and switching speed. Technologies needed for monolithic optoelectronic switching are also identified.

  17. Matrix cracking and creep behavior of monolithic zircon and zircon silicon carbide fiber composites

    NASA Astrophysics Data System (ADS)

    Anandakumar, Umashankar

    In this study, the first matrix cracking behavior and creep behavior of zircon matrix silicon carbide fiber composites were studied, together with the fracture and creep behavior of the monolithic zircon. These behaviors are of engineering and scientific importance, and the study was aimed at understanding the deformation mechanisms at elevated temperatures. The first matrix cracking behavior of zircon matrix uniaxially reinforced with silicon carbide fiber (SCS-6) composites and failure behavior of monolithic zircon were studied as a function of temperature (25°C, 500°C, and 1200°C) and crack length in three point bending mode. A modified vicker's indentation technique was used to vary the initial crack length in monolithic and composite samples. The interfacial shear strength was measured at these temperatures from matrix crack saturation spacing. The composites exhibited steady state and non steady state behaviors at the three different temperatures as predicted by theoretical models, while the failure stress of zircon decreased with increasing stress. The intrinsic properties of the composites were used to numerically determine the results predicted by three different matrix cracking models based on a fracture mechanics approach. The analysis showed that the model based on crack bridging analysis was valid at 25°C and 500°C, while a model based on statistical fiber failure was valid at 1200°C. Microstructural studies showed that fiber failure in the crack wake occurred at or below the matrix cracking stress at 1200°C, and no fiber failure occurred at the other two temperatures, which validated the results predicted by the theoretical models. Also, it was shown that the interfacial shear stress corresponding to debonding determined the matrix cracking stress, and not the frictional shear stress. This study showed for the first time, the steady state and non-steady state matrix cracking behavior at elevated temperatures, the difference in behavior between

  18. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    PubMed

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %).

  19. In vivo silicon-based flexible radio frequency integrated circuits monolithically encapsulated with biocompatible liquid crystal polymers.

    PubMed

    Hwang, Geon-Tae; Im, Donggu; Lee, Sung Eun; Lee, Jooseok; Koo, Min; Park, So Young; Kim, Seungjun; Yang, Kyounghoon; Kim, Sung June; Lee, Kwyro; Lee, Keon Jae

    2013-05-28

    Biointegrated electronics have been investigated for various healthcare applications which can introduce biomedical systems into the human body. Silicon-based semiconductors perform significant roles of nerve stimulation, signal analysis, and wireless communication in implantable electronics. However, the current large-scale integration (LSI) chips have limitations in in vivo devices due to their rigid and bulky properties. This paper describes in vivo ultrathin silicon-based liquid crystal polymer (LCP) monolithically encapsulated flexible radio frequency integrated circuits (RFICs) for medical wireless communication. The mechanical stability of the LCP encapsulation is supported by finite element analysis simulation. In vivo electrical reliability and bioaffinity of the LCP monoencapsulated RFIC devices are confirmed in rats. In vitro accelerated soak tests are performed with Arrhenius method to estimate the lifetime of LCP monoencapsulated RFICs in a live body. The work could provide an approach to flexible LSI in biointegrated electronics such as an artificial retina and wireless body sensor networks.

  20. Development of large-area monolithically integrated Silicon-Film photovoltaic modules. Annual subcontract report, 16 November 1991--31 December 1992

    SciTech Connect

    Rand, J.A.; Cotter, J.E.; Ingram, A.E.; Ruffins, T.R.; Shreve, K.P.; Hall, R.B.; Barnett, A.M.

    1993-06-01

    This report describes work to develop Silicon-Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (< 100-{mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200-cm{sup 2}, 18%-efficient, monolithic array. The short-term objectives are to improve material quality and to fabricate 100 cm{sup 2} monolithically interconnected solar cell arrays. Low minority-carrier diffusion length in the silicon film and series resistance in the interconnected device structure are presently limiting device performance. Material quality is continually improving through reduced impurity contamination. Metallization schemes, such as a solder-dipped interconnection process, have been developed that will allow low-cost production processing and minimize R{sub s} effects. Test data for a nine-cell device (16 cm{sup 2}) indicated a V{sub oc} of 3.72 V. These first-reported monolithically interconnected multicrystalline silicon-on-ceramic devices show low shunt conductance (< 0.1 mA/cm{sup 2}) due to limited conduction through the ceramic and no process-related metallization shunts.

  1. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon)

    DTIC Science & Technology

    1992-06-01

    The laser fabrication begins with the patterning of for optoelectronic integrated circuits (OEICs), a planar 1 000 A of Si3N4 into rings [25-jim-wide...is grown in the center of the wave- guide in the lateral direction. guide layer. The effect of the optical waveguide is shown by the The laser ... fabrication begins with the deposition on the near-field (NF) pattern in the inset (b) of the -2-jim- crystal of - 1000 Ak Si 3N4, which is patterned with

  2. Electronic GaAs-on-Silicon Material for Advanced High-Speed Optoelectronic Devices

    DTIC Science & Technology

    1991-01-01

    boundaries , low angle grain boundaries , twinning, and dislocations. Bauser et al. [20] have reported convincing experimental evidence that liquid-phase...Electron mobilities as high as 2000 cm2/V-s were measured. The GaAs films on silicon substrates formed by CSVT were used to seed the subsequent growth...film. Electron mobilities as high as 2000 cm2/V-s were measured in CSVT GaAs films on silicon. The effects of various process parameters on film

  3. Synthesis and properties of transparent cycloaliphatic epoxy-silicone resins for opto-electronic devices packaging

    NASA Astrophysics Data System (ADS)

    Gao, Nan; Liu, WeiQu; Yan, ZhenLong; Wang, ZhengFang

    2013-01-01

    Cycloaliphatic epoxy-silicone resins were successfully synthesized through a two-step reaction route: (і) hydrosilylation of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) and 1,2-epoxy-4-vinyl-cyclohexane (VCMX), (іі) blocking of unreacted Sisbnd H in (і) with n-butanol. The molecular structures of the cycloaliphatic epoxy-silicone resins were characterized by Fourier transform infrared (FT-IR) and nuclear magnetic resonance (1H NMR and 29Si NMR). High grafting efficiencies of epoxy groups were confirmed by 1H NMR combined with weighting results, indicating over 90 mol% of cycloaliphatic epoxy were grafted on the silicone resins. Subsequently, Sisbnd H groups from TMCTS were almost totally consumed after the blocking reactions. In comparison with commercial available cycloaliphatic epoxy resin 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate (ERL-4221) cured by MHHPA, the cured cycloaliphatic epoxy-silicone resins exhibited better thermal stability, lower water absorption and higher UV/thermal resistance. Moreover, the characteristics of transmittance (>90%, 800 nm), 5 wt.% mass loss temperature (>330 °C) and no yellowing during thermal aging at 120 °C or UV aging for 288 h of the cured cycloaliphatic epoxy-silicone resins, made them possible for power light-emitting diode (LED) encapsulants, or other packaging materials, like optical lenses, and electronic sealings.

  4. Study of silicone-based materials for the packaging of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lin, Yeong-Her

    The first part of this work is to evaluate the main materials used for the packaging of high power light-emitting diodes (LEDs), i.e., the die attach materials, the encapsulant materials, and high color rendering index(CRI) sol-gel composite materials. All of these materials had been discussed the performance, reliability, and issues in high power LED packages. High power white LEDs are created either from blue or near-ultraviolet chips encapsulated with a yellow phosphor, or from red-green-blue LED light mixing systems. The phosphor excited by blue LED chip was mostly used in experiment of this dissertation. The die attach materials contains filler particles possessing a maximum particle size less than 1.5 mum in diameter blended with epoxy polymer matrix. Such compositions enable thin bond line thickness, which decreases thermal resistance that exists between thermal interface materials and the corresponding mating surfaces. The thermal conductivity of nano silver die attach materials is relatively low, the thermal resistance from the junction to board is just 1.6 KW-1 in the bond line thickness of 5.3 mum, which is much lower than the thermal resistance using conventional die attach materials. The silicone die attach adhesive made in the lab cures through the free radical reaction of epoxy-functional organopolysiloxane and through the hydrosilylation reaction between alkenyl-functional organopolysiloxane and silicone-boned hydrogen-functional organopolysiloxane. By the combination of the free radical reaction and the hydrosilylation reaction, the low-molecular-weight silicone oil will not be out-migrated and not contaminate wire bondability to the LED chip and lead frame. Hence, the silicone die attach adhesive made in the lab can pass all reliability tests, such as operating life test JEDEC 85°C/85RH and room temperature operating life test. For LED encapsulating materials, most of commercial silicone encapsulants still suffer thermal/radiation induced

  5. Single crystalline mesoporous silicon nanowires.

    PubMed

    Hochbaum, Allon I; Gargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-10-01

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  6. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, A.I.; Gargas, Daniel; Jeong Hwang, Yun; Yang, Peidong

    2009-08-04

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  7. Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

    NASA Astrophysics Data System (ADS)

    Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

    2015-02-01

    We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

  8. Monolithic LaBr3:Ce crystals on silicon photomultiplier arrays for time-of-flight positron emission tomography

    NASA Astrophysics Data System (ADS)

    Seifert, Stefan; van Dam, Herman T.; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Löhner, Herbert; Schaart, Dennis R.

    2012-04-01

    Positron emission tomography detectors based on monolithic scintillation crystals exhibit good spatial and energy resolution, intrinsically provide depth-of-interaction information, have high γ-photon capture efficiency, and may reduce the manufacturing costs compared to pixelated crystal arrays. Here, we present the characterization of a detector consisting of a 18.0 mm×16.2 mm×10.0 mm monolithic LaBr3:5%Ce scintillator directly coupled to a 4×4 array of silicon photomultipliers. An energy resolution of 6.4% full-width-at-half-maximum (FWHM) was obtained. The point-spread-function (PSF) was determined for different regions of the detector. The full-width-at-half-maximum (FWHM) of the PSF was measured to be <1.5 mm at the center of the detector and <1.7 mm averaged over the entire crystal. Both values are not corrected for the ∼0.6 mm FWHM test beam diameter. Furthermore, the influence of edge effects was investigated. We found that near the edges of the detector the spatial resolution degrades to 2.2 mm (FWHM), and a bias in the position estimates, up to 1.5 mm, was observed. Moreover, the coincidence resolving time for two identical detectors in coincidence was measured to be as small as ∼198 ps FWHM.

  9. Monolithic LaBr₃:Ce crystals on silicon photomultiplier arrays for time-of-flight positron emission tomography.

    PubMed

    Seifert, Stefan; van Dam, Herman T; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Löhner, Herbert; Schaart, Dennis R

    2012-04-21

    Positron emission tomography detectors based on monolithic scintillation crystals exhibit good spatial and energy resolution, intrinsically provide depth-of-interaction information, have high γ-photon capture efficiency, and may reduce the manufacturing costs compared to pixelated crystal arrays. Here, we present the characterization of a detector consisting of a 18.0 mm×16.2 mm×10.0 mm monolithic LaBr₃:5%Ce scintillator directly coupled to a 4×4 array of silicon photomultipliers. An energy resolution of 6.4% full-width-at-half-maximum (FWHM) was obtained. The point-spread-function (PSF) was determined for different regions of the detector. The full-width-at-half-maximum (FWHM) of the PSF was measured to be <1.5 mm at the center of the detector and <1.7 mm averaged over the entire crystal. Both values are not corrected for the ~0.6 mm FWHM test beam diameter. Furthermore, the influence of edge effects was investigated. We found that near the edges of the detector the spatial resolution degrades to 2.2 mm (FWHM), and a bias in the position estimates, up to 1.5 mm, was observed. Moreover, the coincidence resolving time for two identical detectors in coincidence was measured to be as small as ~198 ps FWHM.

  10. Monolithically Integrated μLEDs on Silicon Neural Probes for High-Resolution Optogenetic Studies in Behaving Animals

    PubMed Central

    Wu, Fan; Stark, Eran; Ku, Pei-Cheng; Wise, Kensall D.; Buzsáki, György; Yoon, Euisik

    2015-01-01

    SUMMARY We report a scalable method to monolithically integrate microscopic light emitting diodes (μLEDs) and recording sites onto silicon neural probes for optogenetic applications in neuroscience. Each μLED and recording site has dimensions similar to a pyramidal neuron soma, providing confined emission and electrophysiological recording of action potentials and local field activity. We fabricated and implanted the four-shank probes, each integrated with 12 μLEDs and 32 recording sites, into the CA1 pyramidal layer of anesthetized and freely moving mice. Spikes were robustly induced by 60 nW light power, and fast population oscillations were induced at the microwatt range. To demonstrate the spatiotemporal precision of parallel stimulation and recording, we achieved independent control of distinct cells ~50 μm apart and of differential somatodendritic compartments of single neurons. The scalability and spatiotemporal resolution of this monolithic optogenetic tool provides versatility and precision for cellular-level circuit analysis in deep structures of intact, freely moving animals. PMID:26627311

  11. Interface Optoelectronics Engineering for Mechanically Stacked Tandem Solar Cells Based on Perovskite and Silicon.

    PubMed

    Kanda, Hiroyuki; Uzum, Abdullah; Nishino, Hitoshi; Umeyama, Tomokazu; Imahori, Hiroshi; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

    2016-12-14

    Engineering of photonics for antireflection and electronics for extraction of the hole using 2.5 nm of a thin Au layer have been performed for two- and four-terminal tandem solar cells using CH3NH3PbI3 perovskite (top cell) and p-type single crystal silicon (c-Si) (bottom cell) by mechanically stacking. Highly transparent connection multilayers of evaporated-Au and sputtered-ITO films were fabricated at the interface to be a point-contact tunneling junction between the rough perovskite and flat silicon solar cells. The mechanically stacked tandem solar cell with an optimized tunneling junction structure was ⟨perovskite for the top cell/Au (2.5 nm)/ITO (154 nm) stacked-on ITO (108 nm)/c-Si for the bottom cell⟩. It was confirmed the best efficiency of 13.7% and 14.4% as two- and four-terminal devices, respectively.

  12. A new family of multifunctional silicon clathrates: Optoelectronic and thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Liu, Yinqiao; Jiang, Xue; Huang, Yingying; Zhou, Si; Zhao, Jijun

    2017-02-01

    To develop Si structures for multifunctional applications, here we proposed four new low-density silicon clathrates (Si-CL-A, Si-CL-B, Si-CL-C, and Si-CL-D) based on the same bonding topologies of clathrate hydrates. The electronic and thermal properties have been revealed by first-principles calculations. By computing their equation of states, phonon dispersion, and elastic constants, the thermodynamic, dynamic, and mechanical stabilities of Si-CL-A, Si-CL-B, Si-CL-C, and Si-CL-D allotropes are confirmed. In the low-density region of the phase diagram, Si-CL-B, Si-CL-D, and Si-CL-C would overtake diamond silicon and type II clathrate (Si-CL-II) and emerge as the most stable Si allotropes successively. Among them, the two direct semiconductors with bandgaps of 1.147 eV (Si-CL-A) and 1.086 eV (Si-CL-D) are found. The suitable bandgaps close to the optimal Shockley-Queisser limit result in better absorption efficiency in solar spectrum than conventional diamond silicon. Owing to the unique cage-based framework, the thermal conductivity of these Si allotropes at room temperature are very low (2.7-5.7 Wm-1 K-1), which are lower than that of diamond structured Si by two orders of magnitude. The suitable bandgaps, small effective masses, and low thermal conductivity of our new silicon allotropes are anticipated to find applications in photovoltaic and thermoelectric devices.

  13. Two-axis MEMS scanner with transfer-printed high-reflectivity, broadband monolithic silicon photonic crystal mirrors.

    PubMed

    Jeong, Jae-Woong; Park, Bryan; Keum, Hohyun; Kim, Seok; Rogers, John A; Solgaard, Olav

    2013-06-03

    We present a two-axis electrostatic MEMS scanner with high-reflectivity monolithic single-crystal-silicon photonic crystal (PC) mirrors suitable for applications in harsh environments. The reflective surfaces of the MEMS scanner are transfer-printed PC mirrors with low polarization dependence, low angular dependence, and reflectivity over 85% in the wavelength range of 1490nm~1505nm and above 90% over the wavelength band of 1550~1570nm. In static mode, the scanner has total scan range of 10.2° on one rotation axis and 7.8° on the other. Dynamic operation on resonance increase the scan range to 21° at 608Hz around the outer rotation axis and 9.5° at 1.73kHz about the inner rotation axis.

  14. Metal oxide/silicon heterostructures: New solutions for different optoelectronic applications

    SciTech Connect

    Malik, A.; Martins, R.

    1998-12-31

    In this paper the authors report the success in fabricating FTO/Si surface-barrier photodiodes production by spray pyrolysis deposition technique, under ambient conditions. Three types of photodetectors for low-voltage-bias operation were developed based on high-resistivity silicon: (1) X-ray detectors with energy resolution of 16.5% at 661.5 keV ({sup 137}Cs source), consisting of surface-barrier PIN photodiode with an active area of 50 mm{sup 2} operating at 5V reverse bias, scintillator based on monocrystalline Bi{sub 4}Ge{sub 3}O{sub 12} and preamplifier (noise of 250 e{sup {minus}} RMS); (2) fast-response surface-barrier FTO/n{sup {minus}}-n{sup +} silicon epitaxial photodiodes, operating at 10 V bias with rise times of 2 ns at {lambda} = 0.85 {micro}m; (3) radiation-resistant drift epitaxial surface-barrier PIN photodiodes for unbiased operating conditions, with an exponential impurity distribution in a 8 {micro}m thick epitaxial layer. A built-in electrical field due to the carrier concentration distribution in the epitaxial layer provides a considerable improvement in the critical fluence value (3 {times} 10{sup 14} cm{sup {minus}2}) for neutron irradiation.

  15. A New Silicon Allotrope with a Direct Band Gap for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru; Peking University Team; Kawazoe Collaboration; Jena Collaboration

    Silicon structures with direct band gaps have been hotly pursued for solar cell applications. To effectively harvest the sunlight in the whole frequency region, it is a good strategy to use arrays consisting of Si structures with different direct band gaps. However, the structure with a direct band gap about 0.6 eV has been missing according to current progress made in the direction. Here we report our findings that the missing structure can be constructed by using Si triangles as the building blocks, which is stable dynamically and thermally, not only exhibiting the desirable band gap, but also showing high intrinsic mobility and low mass density. These advantages over the existing Si structures would motivate new experimental effort in this direction.

  16. WE-AB-BRB-04: A Novel Monolithic Silicon 2D Detector Array for Use in Stereotactic Applications

    SciTech Connect

    Gargett, M; Petasecca, M; Alnaghy, S; Rosenfeld, A; Oborn, B; Metcalfe, P

    2015-06-15

    Purpose: To assess the capability of a novel 2D monolithic silicon detector array in measuring stereotactic photon fields. Methods: The silicon array detector used in this work, named Magic Plate-512 (MP512), is a thin monolithic silicon wafer (52 × 52 × 0.47 mm{sup 3}) with 512 ion-implanted diodes (0.5 × 0.5 mm{sup 2}). Adjacent pixels are spaced evenly with 2 mm pitch, covering a maximum detection area 46 mm wide. Its fast, FPGA based read-out system is synchronised with the linac to allow readout of all pixels pulse-by-pulse. A clinical SABR lung plan (consisting of 9 single segment beams, 6MV) was measured with the array at 1.5 cm depth in a solid water phantom (100 cm SSD). The typical field size was in the range of 3 × 3 cm{sup 2} to 4 × 4 cm{sup 2}. Each beam was delivered at perpendicular incidence to the detector plane so as to avoid the need for angular dependence corrections. The fields were measured under the same conditions using Gafchromic EBT3 film for comparison. The film was scanned at 72 dpi resolution, with the red channel data used for analysis. Results: Average gamma passing rates of (92.3 ± 1.8) % for 2%/2mm criteria, and (86.6 ± 2.3) % for 1%/2mm criteria were achieved for MP512, using EBT3 film as the reference distribution. The detector array was able to accurately measure the full-width-at-half-maximum (FWHM), to within (0.77 ± 0.01) mm accuracy when compared to film. The penumbral widths (80%-20%) were measured to within (0.30 ± 0.01) mm accuracy to film. Conclusion: The MP512 is a feasible option for measurement of stereotactic photon fields, with its high density of detection points making it useful for small field applications. The prototype array has demonstrated merit; in the future the development of a larger array detection area would be beneficial for clinical applications.

  17. Germanium epitaxy on silicon

    PubMed Central

    Ye, Hui; Yu, Jinzhong

    2014-01-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics. PMID:27877657

  18. Germanium epitaxy on silicon.

    PubMed

    Ye, Hui; Yu, Jinzhong

    2014-04-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  19. Germanium epitaxy on silicon

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Yu, Jinzhong

    2014-04-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  20. Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices

    PubMed Central

    Mukherjee, Subhrajit; Maiti, Rishi; Katiyar, Ajit K.; Das, Soumen; Ray, Samit K.

    2016-01-01

    Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450–800 nm are found to be stable in the temperature range of 10–350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 1011 Jones, respectively at an applied bias of −2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials. PMID:27357596

  1. Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion

    SciTech Connect

    2010-09-01

    ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

  2. Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon

    NASA Astrophysics Data System (ADS)

    Gooth, J.; Schaller, V.; Wirths, S.; Schmid, H.; Borg, M.; Bologna, N.; Karg, S.; Riel, H.

    2017-02-01

    We present the monolithic integration and electrical characterization of InAs nanowires (NWs) with the well-defined geometries and positions on Si as a platform for quantum transport studies. Hereby, one-dimensional (1D) ballistic transport with step-like 1D conductance quantization in units of 2e2/h is demonstrated for NWs with the widths between 28 nm and 58 nm and a height of 40 nm. The electric field control of up to four individual modes is achieved. Furthermore, the sub-band structure of the nanowires is investigated using bias spectroscopy. The splitting between the first and the second sub-band increases as the width of the NWs is reduced, whereas the degeneracy of the second sub-band can be tuned by the symmetry of the NW cross section, in accordance with a "particle in a box" model. The length-dependent studies reveal ballistic transport for up to 300 nm and quasi-ballistic transport with a mean free path of 470 nm for longer InAs NW channels at 30 K. We anticipate that the ballistic 1D transport in monolithically integrated InAs NWs presented here will form the basis for sophisticated quantum wire devices for the future integrated circuits with additional functionalities.

  3. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

    PubMed

    Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

    2013-03-25

    n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

  4. High-speed detection at two micrometres with monolithic silicon photodiodes

    NASA Astrophysics Data System (ADS)

    Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

    2015-06-01

    With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

  5. Physical and optoelectronic characterization of reactively sputtered molybdenum-silicon-nitride alloy metal gate electrodes

    NASA Astrophysics Data System (ADS)

    Patel, P.; Nadesalingam, M.; Wallace, R. M.; Buchanan, D. A.

    2009-01-01

    With continued transistor scaling, work function tuning of metal gates has become important for advanced complementary-metal-oxide-silicon applications. The work function tuning of reactively sputtered MoxSiyNz (also referred to as MoSiN) gates has been studied through the incorporation of nitrogen. The nitrogen concentration in the MoSiN films was altered by controlling the gas flow ratio, RN=N2/(N2+Ar), during gate deposition. The sheet resistance (Rs) of blanket MoSiN films, measured using four-point resistance method, was found to increase as the gas flow ratio was varied from 10% to 40%. Current-voltage measurements confirmed excellent electrical stability of MoSiN/SiO2/p-Si gate stack for applied electric fields ranging up to 6 MV/cm. High frequency capacitance-voltage measurements were used to extract the MoSiN work function (Φm) using the relationship between the flatband voltage (VFB) and the oxide thickness (tox). The extracted MoSiN/SiO2 interfacial barrier heights, obtained through the internal photoemission of electrons, were used to corroborate the extracted values of MoSiN work function. The MoSiN work functions (Φm), extracted independently using both techniques, were consistent and were observed to decrease with increasing gas flow ratio [N2/(N2+Ar)]. Secondary ion mass spectrometry depth analysis revealed uniform distribution of nitrogen throughout the bulk MoSiN films, with no piling up at gate-dielectric interface. X-ray photoelectron spectroscopy surface analysis suggested a steady increase in the Mo-N bonds, and therefore the total nitrogen concentration (from ˜20% to 32%), as the gas flow ratio is increased from 10% to 40%. A similar trend was observed in the nitrogen concentration (in percent), measured using Rutherford backscattering spectroscopy, for these gate deposition conditions. These material characterization results demonstrate that the increase in nitrogen concentration in MoSiN films is consistent with the lowering of Mo

  6. Lateral PIN diodes for silicon-on-insulator monolithic microwave integrated circuits

    NASA Astrophysics Data System (ADS)

    Wu, S.; Letavic, T. J.; Gutmann, R. J.; Maby, E. W.

    1988-09-01

    Surface-oriented lateral mesa PIN diodes have been fabricated for the purpose of evaluating the feasibility of a silicon-on-insulator technology for microwave applications. For these devices, heavily doped p and n regions are formed from ion-implanted polysilicon diffusion sources which abut opposite sides of an intrinsic rectangular-shaped mesa, and electrical contact to the injecting contacts can be made with low parasitic series resistance. Devices for process evaluation were fabricated using a single-crystal silicon substrate (as opposed to recrystallized silicon-on-insulator films). Both d.c. and 3-GHz electrical characteristics indicate the desired conductivity modulation of the intrinsic region under forward bias. Moreover, the large breakdown voltage which is observed indicates that high peak-power handling capability should be possible.

  7. Probing Photocurrent Nonuniformities in the Subcells of Monolithic Perovskite/Silicon Tandem Solar Cells.

    PubMed

    Song, Zhaoning; Werner, Jérémie; Shrestha, Niraj; Sahli, Florent; De Wolf, Stefaan; Niesen, Björn; Watthage, Suneth C; Phillips, Adam B; Ballif, Christophe; Ellingson, Randy J; Heben, Michael J

    2016-12-15

    Perovskite/silicon tandem solar cells with high power conversion efficiencies have the potential to become a commercially viable photovoltaic option in the near future. However, device design and optimization is challenging because conventional characterization methods do not give clear feedback on the localized chemical and physical factors that limit performance within individual subcells, especially when stability and degradation is a concern. In this study, we use light beam induced current (LBIC) to probe photocurrent collection nonuniformities in the individual subcells of perovskite/silicon tandems. The choices of lasers and light biasing conditions allow efficiency-limiting effects relating to processing defects, optical interference within the individual cells, and the evolution of water-induced device degradation to be spatially resolved. The results reveal several types of microscopic defects and demonstrate that eliminating these and managing the optical properties within the multilayer structures will be important for future optimization of perovskite/silicon tandem solar cells.

  8. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

    SciTech Connect

    Dargis, Rytis Clark, Andrew; Erdem Arkun, Fevzi; Grinys, Tomas; Tomasiunas, Rolandas; O'Hara, Andy; Demkov, Alexander A.

    2014-07-01

    Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

  9. Monolithic integration of detectors and transistors on high-resistivity silicon

    NASA Astrophysics Data System (ADS)

    Dalla Betta, Gian-Franco; Batignani, Giovanni; Boscardin, Maurizio; Bosisio, Luciano; Gregori, Paolo; Pancheri, Lucio; Piemonte, Claudio; Ratti, Lodovico; Verzellesi, Giovanni; Zorzi, Nicola

    2007-09-01

    We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed.

  10. Tensile creep and creep rupture behavior of monolithic and SiC-whisker-reinforced silicon nitride ceramics

    SciTech Connect

    Ohji, Tatsuki; Yamauchi, Yukihiko )

    1993-12-01

    The tensile creep and creep rupture behavior of silicon nitride was investigated at 1,200 to 1,350 C using hot-pressed materials with and without SiC whiskers. Stable steady-state creep was observed under low applied stresses at 1,200 C. Accelerated creep regimes, which were absent below 1,300 C, were identified above that temperature. The appearance of accelerated creep at the higher temperatures attributable to formation of microcracks throughout a specimen. The whisker-reinforced material exhibited better creep resistance than the monolith at 1,200 C. Considerably high values 3 to 5, were obtained for the creep exponent in the overall temperature range. The exponent tended to decrease with decreasing applied stress at 1,200 C. The primary creep mechanism was considered cavitation-enhanced creep. Specimen lifetimes followed the Monkman-Grant relationship except for fractures with large accelerated creep regimes. The creep rupture behavior is discussed in association with cavity formation and crack adolescence.

  11. Imaging and chemical surface analysis of biomolecular functionalization of monolithically integrated on silicon Mach-Zehnder interferometric immunosensors

    NASA Astrophysics Data System (ADS)

    Gajos, Katarzyna; Angelopoulou, Michailia; Petrou, Panagiota; Awsiuk, Kamil; Kakabakos, Sotirios; Haasnoot, Willem; Bernasik, Andrzej; Rysz, Jakub; Marzec, Mateusz M.; Misiakos, Konstantinos; Raptis, Ioannis; Budkowski, Andrzej

    2016-11-01

    Time-of-flight secondary ion mass spectrometry (imaging, micro-analysis) has been employed to evaluate biofunctionalization of the sensing arm areas of Mach-Zehnder interferometers monolithically integrated on silicon chips for the immunochemical (competitive) detection of bovine κ-casein in goat milk. Biosensor surfaces are examined after: modification with (3-aminopropyl)triethoxysilane, application of multiple overlapping spots of κ-casein solutions, blocking with 100-times diluted goat milk, and reaction with monoclonal mouse anti-κ-casein antibodies in blocking solution. The areas spotted with κ-casein solutions of different concentrations are examined and optimum concentration providing homogeneous coverage is determined. Coverage of biosensor surfaces with biomolecules after each of the sequential steps employed in immunodetection is also evaluated with TOF-SIMS, supplemented by Atomic force microscopy and X-ray photoelectron spectroscopy. Uniform molecular distributions are observed on the sensing arm areas after spotting with optimum κ-casein concentration, blocking and immunoreaction. The corresponding biomolecular compositions are determined with a Principal Component Analysis that distinguished between protein amino acids and milk glycerides, as well as between amino acids characteristic for Mabs and κ-casein, respectively. Use of the optimum conditions (κ-casein concentration) for functionalization of chips with arrays of ten Mach-Zehnder interferometers provided on-chips assays with dramatically improved both intra-chip response repeatability and assay detection sensitivity.

  12. Friction and Wear of Monolithic and Fiber Reinforced Silicon-Ceramics Sliding Against IN-718 Alloy at 25 to 800 C in Atmospheric Air at Ambient Pressure

    NASA Technical Reports Server (NTRS)

    Deadmore, Daniel L.; Sliney, Harold E.

    1988-01-01

    The friction and wear of monolithic and fiber reinforced Si-ceramics sliding against the nickel base alloy IN-718 at 25 to 800 C was measured. The monolithic materials tested were silicon carbide (SiC), fused silica (SiO2), syalon, silicon nitride (Si3N4) with W and Mg additives, and Si3N4 with Y2O3 additive. At 25 C fused silica had the lowest friction while Si3N4 (W,Mg type) had the lowest wear. At 800 C syalon had the lowest friction while Si3N4 (W,Mg type) and syalon had the lowest wear. The SiC/IN-718 couple had the lowest total wear at 25 C. At 800 C the fused silica/IN-718 couple exhibited the least total wear. SiC fiber reinforced reaction bonded silicon nitride (RBSN) composite material with a porosity of 32 percent and a fiber content of 23 vol percent had a lower coefficient of friction and wear when sliding parallel to the fiber direction than in the perpendicular at 25 C. The coefficient of friction for the carbon fiber reinforced borosilicate composite was 0.18 at 25 C. This is the lowest of all the couples tested. Wear of this material was about two decades smaller than that of the monolithic fused silica. This illustrates the large improvement in tribological properties which can be achieved in ceramic materials by fiber reinforcement. At higher temperatures the oxidation products formed on the IN-718 alloy are transferred to the ceramic by sliding action and forms a thin, solid lubricant layer which decreases friction and wear for both the monolithic and fiber reinforced composites.

  13. Enhancing flow boiling heat transfer in microchannels for thermal management with monolithically-integrated silicon nanowires.

    PubMed

    Li, D; Wu, G S; Wang, W; Wang, Y D; Liu, Dong; Zhang, D C; Chen, Y F; Peterson, G P; Yang, Ronggui

    2012-07-11

    Thermal management has become a critical issue for high heat flux electronics and energy systems. Integrated two-phase microchannel liquid-cooling technology has been envisioned as a promising solution, but with great challenges in flow instability. In this work, silicon nanowires were synthesized in situ in parallel silicon microchannel arrays for the first time to suppress the flow instability and to augment flow boiling heat transfer. Significant enhancement in flow boiling heat transfer performance was demonstrated for the nanowire-coated microchannel heat sink, such as an early onset of nucleate boiling, a delayed onset of flow oscillation, suppressed oscillating amplitudes of temperature and pressure drop, and an increased heat transfer coefficient.

  14. Development of large-area monolithically integrated Silicon-Film{trademark} photovoltaic modules. Annual subcontract report, 1 January 1993--31 December 1993

    SciTech Connect

    Rand, J.A.; Cotter, J.E.; Ingram, A.E.; Ruffins, T.R.; Thomas, C.J.; Hall, R.B.; Barnett, A.M.

    1994-06-01

    This report describes work performed under a program to develop Silicon-Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin polycrystalline layer of silicon on a durable, insulating, ceramic) substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200-cm{sup {minus}2}, 18%-efficient solar module. This report discusses material quality improvements due to the use of new metallurgical barrier technologies. The barrier is essential in preventing impurity interaction between the silicon film and the low-cost substate. Also, a new filament-based fabric substate material was investigated. Efficiencies greater than 10% were achieved on 1.0-cm{sup 2} devices made on these substrates. We also demonstrated the monolithic fabrication sequence by the fabrication of a prototype array using the device processing sequences developed during Phase 11 of this program.

  15. Monolithic microcircuit techniques and processes

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1972-01-01

    Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.

  16. An optoelectronic circuit with a light source, an optical waveguide and a sensor all on silicon: Results and analysis of a novel system

    NASA Astrophysics Data System (ADS)

    Alarcón-Salazar, J.; Zaldívar-Huerta, I. E.; Aceves-Mijares, M.

    2016-10-01

    A full analysis of an optoelectronic circuit on silicon composed by a light emitter, an optical waveguide and a photodetector is achieved. The light emitter is based on silicon rich oxide multilayers. The multilayer structure exhibits an electroluminescence spectra from 400 nm to 800 nm. Light emitter and optical waveguide are located next to each other in a novel topology that allows the direct impact of the photons to the depletion layer of the sensor, increasing the efficiency. An optical rib-type waveguide and multi-modal, using Si3N4 and SiO2 as core and cladding materials, is considered to propagate the light from the light emitter to the sensor. Analysis of the waveguide reveals that the optimal height is 1.25 μm, when a width of 5 μm and a fractional height of 0.8 are used. A relative transmittance of the optical waveguide shows that the propagated light maintains the wide spectrum. A planar diode is used as photodetector. The proposal-integrated structure shows that light impinges directly on the depleted zone, improving detection and performance of the diode. Finally, a description of the novel optoelectronic circuit is addressed.

  17. A monolithically integrated polarization entangled photon pair source on a silicon chip

    PubMed Central

    Matsuda, Nobuyuki; Le Jeannic, Hanna; Fukuda, Hiroshi; Tsuchizawa, Tai; Munro, William John; Shimizu, Kaoru; Yamada, Koji; Tokura, Yasuhiro; Takesue, Hiroki

    2012-01-01

    Integrated photonic circuits are one of the most promising platforms for large-scale photonic quantum information systems due to their small physical size and stable interferometers with near-perfect lateral-mode overlaps. Since many quantum information protocols are based on qubits defined by the polarization of photons, we must develop integrated building blocks to generate, manipulate, and measure the polarization-encoded quantum state on a chip. The generation unit is particularly important. Here we show the first integrated polarization-entangled photon pair source on a chip. We have implemented the source as a simple and stable silicon-on-insulator photonic circuit that generates an entangled state with 91 ± 2% fidelity. The source is equipped with versatile interfaces for silica-on-silicon or other types of waveguide platforms that accommodate the polarization manipulation and projection devices as well as pump light sources. Therefore, we are ready for the full-scale implementation of photonic quantum information systems on a chip. PMID:23150781

  18. In situ growth of fluorescent silicon nanocrystals in a monolithic microcapsule as a photostable, versatile platform.

    PubMed

    Zhu, Guixian; Huang, Yu; Bhave, Gauri; Wang, Yuzhen; Hu, Zhongbo; Liu, Xuewu

    2016-08-25

    A facile, one-step method was developed for the in situ formation of fluorescent silicon nanocrystals (SiNC) in a microspherical encapsulating matrix. The obtained SiNC encapsulated polymeric microcapsules (SiPM) possess uniform size (0.1-2.0 μm), strong fluorescence, and nanoporous structure. A unique two stage, time dependent reaction was developed, as the growth of SiNC was slower than the formation of polymeric microcapsules. The resulting SiPM with increasing reaction time exhibited two levels of stability, and correspondingly, the release of SiNC in aqueous media showed different behavior. With reaction time <1 h, the obtained low-density SiPM (LD-SiPM) as matrix microcapsules, would release encapsulated SiNC on demand. With >1 h reaction time, resulting high-density SiPM (HD-SiPM) became stable SiNC reservoirs. SiPM exhibit stable photoluminescence. The porous structure and fluorescence quenching effects make SiPM suitable for bioimaging, drug loading and sorption of heavy metals (Hg(2+) as shown) as an intrinsic indicator. SiPM were able to reduce metal ions, forming SiPM/metal oxide and SiPM/metal hybrids, and their applications in bio-sensing and catalysis were also demonstrated.

  19. A fabrication process for the monolithic integration of magnetoelastic actuators and silicon sensors

    NASA Astrophysics Data System (ADS)

    Tang, Jun; Green, Scott R.; Gianchandani, Yogesh B.

    2015-04-01

    This paper describes a microfabrication process that accommodates the design considerations of wirelessly actuated magnetoelastic traveling wave and standing wave motors that are integrated with capacitive position sensors on a silicon substrate. The process—which incorporates AuIn eutectic bonding, multiple deep reactive ion etching steps, and metal electrode deposition and etching—addresses the challenges of magnetoelastic layer attachment, multi-layer structures, and robust electrode isolation. Measurements of successfully fabricated devices show that the typical resonant frequencies of the clockwise and counterclockwise modes for the standing wave stators existed at 12.1 and 22.4 kHz with 0.44 µm and 0.4 µm out-of-plane amplitudes, respectively, when a ≈2 Oe amplitude ac magnetic field and a ≈6.5 Oe dc magnetic bias field were applied. For the as-fabricated traveling wave motors, two desired mode shapes with π/2 spatial phase shift existed at typical frequencies of 28.4 and 29.9 kHz, with typical out-of-plane amplitudes of 74 and 70 nm, respectively, when a ≈6 Oe amplitude ac magnetic field and a ≈3 Oe dc magnetic bias field were applied. The frequencies were tuned with added mass, resulting in a shift to 28.37 and 28.33 kHz with out-of-plane amplitudes of 80 and 60 nm for the two modes, respectively. After tuning, a traveling wave with a continuous direction of propagation was successfully demonstrated. The capacitive position sensing scheme showed a sensitivity of ≈0.5 pF per degree over 8°.

  20. Study of a solid state microdosemeter based on a monolithic silicon telescope: irradiations with low-energy neutrons and direct comparison with a cylindrical TEPC.

    PubMed

    Agosteo, S; Colautti, P; Fanton, I; Fazzi, A; Introini, M V; Moro, D; Pola, A; Varoli, V

    2011-02-01

    A silicon device based on the monolithic silicon telescope technology coupled to a tissue-equivalent converter was proposed and investigated for solid state microdosimetry. The detector is constituted by a ΔE stage about 2 µm in thickness geometrically segmented in a matrix of micrometric diodes and a residual-energy measurement stage E about 500 µm in thickness. Each thin diode has a cylindrical sensitive volume 9 µm in nominal diameter, similar to that of a cylindrical tissue-equivalent proportional counter (TEPC). The silicon device and a cylindrical TEPC were irradiated in the same experimental conditions with quasi-monoenergetic neutrons of energy between 0.64 and 2.3 MeV at the INFN-Legnaro National Laboratories (LNL-INFN, Legnaro, Italy). The aim was to study the capability of the silicon-based system of reproducing microdosimetric spectra similar to those measured by a reference microdosemeter. The TEPC was set in order to simulate a tissue site about 2 μm in diameter. The spectra of the energy imparted to the ▵E stage of the silicon telescope were corrected for tissue-equivalence through an optimized procedure that exploits the information from the residual energy measurement stage E. A geometrical correction based on parametric criteria for shape-equivalence was also applied. The agreement between the dose distributions of lineal energy and the corresponding mean values is satisfactory at each neutron energy considered.

  1. Development of large-area monolithically integrated silicon-film{trademark} photovoltaic modules. Final subcontract report, May 1, 1991--December 31, 1994

    SciTech Connect

    Hall, R.B.; Rand, J.A.; Cotter, J.E.

    1995-04-01

    The objective of this program is to develop Silicon Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (<100 {mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achieved by the use of light trapping and passivated surfaces. This project focused on the development of five key technologies associated with the monolithic sub-module device structure: (1) development of the film deposition and growth processes; (2) development of the low-cost ceramic substrate; (3) development of a metallurgical barrier technology; (4) development of sub-element solar cell processing techniques; and (5) development of sub-module (isolation and interconnection) processes. This report covers the development approaches and results relating to these technologies. Significant progress has been made in the development of all of the related technologies. This is evidenced by the fabrication of a working 12.0 cm{sup 2} prototype sub-module consisting of 7 elements and testing with an open circuit voltage of 3.9 volts, a short circuit current of 35.2 mA and a fill factor of 63% and an overall efficiency of 7.3%. Another significant result achieved is a 13.4% (NREL verified), 1.0 cm{sup 2} solar cell fabricated from material deposited and grown on a graphite cloth substrate. The significant technological hurdle of the program was and remains the low quality of the photovoltaic layer which is caused by contamination of the photovoltaic layer from the low-cost ceramic substrate by trace impurities found in the substrate precursor materials. The ceramic substrate and metallurgical barrier are being developed specifically to solve this problem.

  2. A 16 GHz silicon-based monolithic balanced photodetector with on-chip capacitors for 25 Gbaud front-end receivers.

    PubMed

    Hai, Mohammed Shafiqul; Sakib, Meer Nazmus; Liboiron-Ladouceur, Odile

    2013-12-30

    In this paper, a Germanium-on-Silicon balanced photodetector (BPD) with integrated biasing capacitors is demonstrated for highly compact monolithic 100 Gb/s coherent receivers or 25 Gbaud front-end receivers for differential or quadrature phase shift keying. The balanced photodetector has a bandwidth of approximately 16.2 GHz at a reverse bias of -4.5 V. The balanced photodetector exhibits a common mode rejection ratio (CMRR) of 30 dB. For balanced detection of return-to-zero (RZ) differential phase shift keying (DPSK) signal, the photodetector has a sensitivity of -6.95 dBm at the BER of 10(-12). For non-return-to-zero (NRZ) on off keying (OOK) signal, the measured BER is 1.0 × 10(-12) for a received power of -1.65 dBm at 25 Gb/s and 9.9 × 10(-5) for -0.34 dBm at 30 Gb/s. The total footprint area of the monolithic front-end receiver is less than 1 mm(2). The BPD is packaged onto a ceramic substrate with two DC and one RF connectors exhibits a bandwidth of 15.9 GHz.

  3. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  4. Monolithic Optoelectronic Implementation of Neural Planes

    DTIC Science & Technology

    1991-01-01

    of such performance are high - efficiency LED’s, laser diodes and photodiodes, high -current-gain bipolar transis- tors, and high -transconductance...because of their structural compatibility with laser diodes [10,131 and LED’s. Very high current gain (/P ,- 104) has been demonstrated in single...GaAs laser onto the phototransistor and measuring the emitter-collector current simultaneously. This is shown in Fig. 3.13. Because of the low doping

  5. GaAs Gigabit Monolithic Optoelectronic Transmitter.

    DTIC Science & Technology

    1983-10-01

    required for laser fabrication is the major advantage of Honeywell’s laser-in-a-well concept. The most critical processing step for the laser-in-a-well is...HEAT SINK Figure 51. Detail of the Laser/Multiplexer Chip Carrier Assembly The 14 wafers that completed the initial laser fabrication steps were sent...capabilities. It is not known if all of these char- acteristics can be achieved in a single laser or if trade-offs will be required. * The laser

  6. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  7. Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

    DOEpatents

    Wang, Daojing; Yang, Peidong; Kim, Woong; Fan, Rong

    2011-09-20

    Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

  8. Integrated terahertz optoelectronics

    NASA Astrophysics Data System (ADS)

    Liang, Guozhen; Wang, Qi Jie

    2016-11-01

    Currently, terahertz (THz) optical systems are based on bulky free-space optics. This is due to the lack of a common platform onto which different THz components, e.g., source, waveguide, modulator and detector, can be monolithically integrated. With the development of THz quantum cascade laser (QCL), it has been realized that the QCL chip may be such a platform for integrated THz photonics. Here, we report our recent works where the THz QCL is integrated with passive or optoelectronic components. They are: 1) integrated graphene modulator with THz QCL achieving 100% modulation depth and fast speed; 2) phase-locked THz QCL with integrated plasmonic waveguide and subwavelength antennas realizing dynamically widely tunable polarizations.

  9. Investigations on optoelectronic transition mechanisms of silicon nanoporous pillar array by using surface photovoltage spectroscopy and photoluminescence spectroscopy

    SciTech Connect

    Hu, Zhen-Gang Tian, Yong-Tao; Li, Xin-Jian

    2014-03-28

    We report the electronic transition mechanisms for hydrothermally prepared silicon nanoporous pillar array (Si-NPA), investigated by surface photovoltage (SPV) spectroscopy and photoluminescence (PL) spectroscopy. By comparing the SPV spectra of single crystal silicon (sc-Si) with that of Si-NPA, the silicon nano-crystallites (nc-Si)/SiO{sub x} nanostructure in the Si-NPA could produce SPV in the wavelength range of 300–580 nm. And 580 nm (∼2.14 eV) was considered as the absorption edge of the nc-Si/SiO{sub x} nanostructure. After the sample was annealed and oxidized in air at different temperatures, both the SPV in the wavelength range of 300–580 nm and the PL emission band around 690 nm from the nc-Si/SiO{sub x} nanostructure weakened and disappeared as the annealing temperature increased from 100 to 500 °C. But both the red-infrared PL band (>710 nm) and the violet-blue PL band were enhanced by increasing the annealing temperature. After 2 years of natural oxidation in air, the SPV features for sc-Si disappeared completely, and the SPV characteristics of the nc-Si/SiO{sub x} nanostructure could be clearly observed. After analysis, the Si–O structure related localized states at the nc-Si/SiO{sub x} interface dominated the electronic transitions during the red PL emission and the SPV for the nc-Si/SiO{sub x} nanostructure in Si-NPA, the red–infrared PL was due to the Si=O structure related electronic transitions, and the violet-blue PL emission could attribute to the oxygen-related defect related recombination of the photo induced carriers.

  10. SU-E-T-163: Characterization of a Novel High Resolution 1D Silicon Monolithic Array for Small Field Commissioning and Quality Assurance

    SciTech Connect

    Bisello, F; McGlade, J; Wang, P; Kralik, J; Kosterin, P; Mooij, R; Solberg, T; Menichelli, D; Celi, J

    2015-06-15

    Purpose: To study the suitability of a novel 1D silicon monolithic array for dosimetry of small radiation fields and for QA of high dose gradient treatment modalities (IMRT and SBRT). Methods: A 1D array composed of 4 monolithic silicon modules of 64 mm length and 1 mm pixel pitch was developed by IBA Dosimetry. Measurements were carried out for 6MV and 15MV photons on two commercial different linacs (TrueBeam and Clinac iX, Varian Medical Systems, Palo Alto, CA) and for a CyberKnife G4 (Accuray Inc., Sunnyvale, CA). The 1D array was used to measure output factors (OF), profiles and off axis correction factors (OACF) for the Iris CyberKnife variable collimator (5–60 mm). In addition, dose profiles (at the isocenter plane) were measured for multiple IMRT and SBRT treatment plans and compared with those obtained using EDR2radiographic film (Carestream Health, Rochester NY), a commercial 2D diode array and with the dose distribution calculated using a commercial TPS (Eclipse, Varian Medical Systems, Palo Alto, CA). Results: Due to the small pixel pitch of the detector, IMRT and SBRT plan profiles deviate from film measurements by less than 2%. Similarly, the 1D array exhibits better performance than the 2D diode array due to the larger (7 mm) pitch of that device. Iris collimator OFs measured using the 1D silicon array are in good agreement with the commissioning values obtained using a commercial stereotactic diode as well as with published data. Maximum deviations are < 3% for the smallest field (5 and 7.5mm) and below 1% for all other dimensions. Conclusion: We have demonstrated good performances of the array for commissioning of small photon fields and in patient QA, compared with diodes and film typically used in these clinical applications. The technology compares favorably with existing commercial solutions The presenting author is founded by a Marie Curie Early Initial Training Network Fellowship of the European Communitys Seventh Framework Programme under

  11. Unravelling a simple method for the low temperature synthesis of silicon nanocrystals and monolithic nanocrystalline thin films

    PubMed Central

    Kim, Ka-Hyun; Johnson, Erik V.; Kazanskii, Andrey G.; Khenkin, Mark V.; Roca i Cabarrocas, Pere

    2017-01-01

    In this work, we present new results on the plasma processing and structure of hydrogenated polymorphous silicon (pm-Si:H) thin films. pm-Si:H thin films consist of a low volume fraction of silicon nanocrystals embedded in a silicon matrix with medium range order, and they possess this morphology as a significant contribution to their growth comes from the impact on the substrate of silicon clusters and nanocrystals synthesized in the plasma. Quadrupole mass spectrometry, ion flux measurements, and material characterization by transmission electron microscopy (TEM) and atomic force microscopy all provide insight on the contribution to the growth by silicon nanocrystals during PECVD deposition. In particular, cross-section TEM measurements show for the first time that the silicon nanocrystals are uniformly distributed across the thickness of the pm-Si:H film. Moreover, parametric studies indicate that the best pm-Si:H material is obtained at the conditions after the transition between a pristine plasma and one containing nanocrystals, namely a total gas pressure around 2 Torr and a silane to hydrogen ratio between 0.05 to 0.1. From a practical point of view these conditions also correspond to the highest deposition rate achievable for a given RF power and silane flow rate. PMID:28091562

  12. Unravelling a simple method for the low temperature synthesis of silicon nanocrystals and monolithic nanocrystalline thin films

    NASA Astrophysics Data System (ADS)

    Kim, Ka-Hyun; Johnson, Erik V.; Kazanskii, Andrey G.; Khenkin, Mark V.; Roca I Cabarrocas, Pere

    2017-01-01

    In this work, we present new results on the plasma processing and structure of hydrogenated polymorphous silicon (pm-Si:H) thin films. pm-Si:H thin films consist of a low volume fraction of silicon nanocrystals embedded in a silicon matrix with medium range order, and they possess this morphology as a significant contribution to their growth comes from the impact on the substrate of silicon clusters and nanocrystals synthesized in the plasma. Quadrupole mass spectrometry, ion flux measurements, and material characterization by transmission electron microscopy (TEM) and atomic force microscopy all provide insight on the contribution to the growth by silicon nanocrystals during PECVD deposition. In particular, cross-section TEM measurements show for the first time that the silicon nanocrystals are uniformly distributed across the thickness of the pm-Si:H film. Moreover, parametric studies indicate that the best pm-Si:H material is obtained at the conditions after the transition between a pristine plasma and one containing nanocrystals, namely a total gas pressure around 2 Torr and a silane to hydrogen ratio between 0.05 to 0.1. From a practical point of view these conditions also correspond to the highest deposition rate achievable for a given RF power and silane flow rate.

  13. Monolithic spectrometer

    DOEpatents

    Rajic, Slobodan; Egert, Charles M.; Kahl, William K.; Snyder, Jr., William B.; Evans, III, Boyd M.; Marlar, Troy A.; Cunningham, Joseph P.

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  14. Monolithic spectrometer

    DOEpatents

    Rajic, S.; Egert, C.M.; Kahl, W.K.; Snyder, W.B. Jr.; Evans, B.M. III; Marlar, T.A.; Cunningham, J.P.

    1998-05-19

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays. 6 figs.

  15. Nanowire Optoelectronics

    NASA Astrophysics Data System (ADS)

    Wang, Zhihuan; Nabet, Bahram

    2015-12-01

    Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  16. Monolithic microchannel heatsink

    DOEpatents

    Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

    1996-01-01

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

  17. Monolithic microchannel heatsink

    DOEpatents

    Benett, W.J.; Beach, R.J.; Ciarlo, D.R.

    1996-08-20

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density. 9 figs.

  18. Compact monolithically-integrated hybrid (de)multiplexer based on silicon-on-insulator nanowires for PDM-WDM systems.

    PubMed

    Chen, Sitao; Shi, Yaocheng; He, Sailing; Dai, Daoxin

    2015-05-18

    A compact silicon hybrid (de)multiplexer is designed and demonstrated by integrating a single bi-directional AWG with a polarization diversity circuit, which consists of an ultra-short polarization-beam splitter (PBS) based on a bent coupler and a polarization rotator (PR) based on a silicon-on-insulator nanowire with a cut corner. The present hybrid (de)multiplexer can operate for both TE- and TM- polarizations and thus is available for PDM-WDM systems. An 18-channel hybrid (de)multiplexer is realized with 9 wavelengths as an example. The wavelength-channel spacing is 400GHz (i.e., Δλ(ch) = 3.2nm) and the footprint of the device is about 530μm × 210μm. The channel crosstalk is about -13dB and the total excess loss is about 7dB. The excess loss increases by about 1~2dB due to the cascaded polarization diversity circuit in comparison with a single bi-directional AWG.

  19. Optoelectronic device

    DOEpatents

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  20. Characterization of a PET detector head based on continuous LYSO crystals and monolithic, 64-pixel silicon photomultiplier matrices.

    PubMed

    Llosá, G; Barrio, J; Lacasta, C; Bisogni, M G; Del Guerra, A; Marcatili, S; Barrillon, P; Bondil-Blin, S; de la Taille, C; Piemonte, C

    2010-12-07

    The characterization of a PET detector head based on continuous LYSO crystals and silicon photomultiplier (SiPM) arrays as photodetectors has been carried out for its use in the development of a small animal PET prototype. The detector heads are composed of a continuous crystal and a SiPM matrix with 64 pixels in a common substrate, fabricated specifically for this project. Three crystals of 12 mm × 12 mm × 5 mm size with different types of painting have been tested: white, black and black on the sides but white on the back of the crystal. The best energy resolution, obtained with the white crystal, is 16% FWHM. The detector response is linear up to 1275 keV. Tests with different position determination algorithms have been carried out with the three crystals. The spatial resolution obtained with the center of gravity algorithm is around 0.9 mm FWHM for the three crystals. As expected, the use of this algorithm results in the displacement of the reconstructed position toward the center of the crystal, more pronounced in the case of the white crystal. A maximum likelihood algorithm has been tested that can reconstruct correctly the interaction position of the photons also in the case of the white crystal.

  1. Photovoltaic manufacturing technology monolithic amorphous silicon modules on continuous polymer substrates: Final technical report, July 5, 1995--December 31, 1999

    SciTech Connect

    Jeffrey, F.

    2000-03-28

    Iowa Thin Film Technologies is completing a three-phase program that has increased throughput and decreased costs in nearly all aspects of its thin-film photovoltaic manufacturing process. The overall manufacturing costs have been reduced by 61 percent through implementation of the improvements developed under this program. Development of the ability to use a 1-mil substrate, rather than the standard 2-mil substrate, results in a 50 percent cost-saving for this material. Process development on a single-pass amorphous silicon deposition system has resulted in a 37 percent throughput improvement. A wide range of process and machine improvements have been implemented on the transparent conducting oxide deposition system. These include detailed parameter optimization of deposition temperatures, process gas flows, carrier gas flows, and web speeds. An overall process throughput improvement of 275 percent was achieved based on this work. The new alignment technique was developed for the laser scriber and printer systems, which improved registration accuracy from 100 microns to 10 microns. The new technique also reduced alignment time for these registration systems significantly. This resulted in a throughput increase of 75 percent on the scriber and 600 percent on the printer. Automated techniques were designed and implemented for the module assembly processes. These include automated busbar attachment, roll-based lamination, and automated die cutting of finished modules. These processes were previously done by hand labor. Throughput improvements ranged from 200 percent to 1200 percent, relative to hand labor rates. A wide range of potential encapsulation materials were evaluated for suitability in a roll lamination process and for cost-effectiveness. A combination material was found that has a cost that is only 10 percent of the standard EVA/Tefzel cost and is suitable for medium-lifetime applications. The 20-year lifetime applications still require the more expensive

  2. Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

    2000-01-01

    Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

  3. Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength.

    PubMed

    Mu, Zhiqiang; Yu, Haochi; Zhang, Miao; Wu, Aimin; Qi, Gongmin; Chu, Paul K; An, Zhenghua; Di, Zengfeng; Wang, Xi

    2017-03-08

    Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.

  4. Opto-electronic morphological processor

    NASA Technical Reports Server (NTRS)

    Yu, Jeffrey W. (Inventor); Chao, Tien-Hsin (Inventor); Cheng, Li J. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    The opto-electronic morphological processor of the present invention is capable of receiving optical inputs and emitting optical outputs. The use of optics allows implementation of parallel input/output, thereby overcoming a major bottleneck in prior art image processing systems. The processor consists of three components, namely, detectors, morphological operators and modulators. The detectors and operators are fabricated on a silicon VLSI chip and implement the optical input and morphological operations. A layer of ferro-electric liquid crystals is integrated with a silicon chip to provide the optical modulation. The implementation of the image processing operators in electronics leads to a wide range of applications and the use of optical connections allows cascadability of these parallel opto-electronic image processing components and high speed operation. Such an opto-electronic morphological processor may be used as the pre-processing stage in an image recognition system. In one example disclosed herein, the optical input/optical output morphological processor of the invention is interfaced with a binary phase-only correlator to produce an image recognition system.

  5. GaAs-based optoelectronic neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H. (Inventor); Kim, Jae H. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

  6. Silicon-Based Optoelectronic Materials, Symposium Held in San Francisco, California on April 12-14, 1993. Materials Research Society Symposium Proceedings, Volume 298

    DTIC Science & Technology

    1993-12-14

    into five basic areas- Si Ge rare earth -doped silicon (this session was organized jointly with symposium E, Rare Earth Doped Semiconductors), silicon...301I-Rare- Earth Doped Semiconductors, G.S. Pomrenke, P.B. Klein, D.W. Langer. 1993, ISBN: 1-55899-197-2 Volume 302- Semiconductors for Room...features in photoluminescence and electroluminescence. Zone folding in atomic layer superlattices, e.g. SimGen1l10,111, and rare earth doping, e.g

  7. Silicon coupled with plasmon nanocavity generates bright visible hot-luminescence.

    PubMed

    Cho, Chang-Hee; Aspetti, Carlos O; Park, Joohee; Agarwal, Ritesh

    2013-01-01

    Due to limitations in device speed and performance of silicon-based electronics, silicon optoelectronics has been extensively studied to achieve ultrafast optical-data processing(1-3). However, the biggest challenge has been to develop an efficient silicon-based light source since indirect band-gap of silicon gives rise to extremely low emission efficiency. Although light emission in quantum-confined silicon at sub-10 nm lengthscales has been demonstrated(4-7), there are difficulties in integrating quantum structures with conventional electronics(8,9). It is desirable to develop new concepts to obtain emission from silicon at lengthscales compatible with current electronic devices (20-100 nm), which therefore do not utilize quantum-confinement effects. Here, we demonstrate an entirely new method to achieve bright visible light emission in "bulk-sized" silicon coupled with plasmon nanocavities from non-thermalized carrier recombination. Highly enhanced emission quantum efficiency (>1%) in plasmonic silicon, along with its size compatibility with present silicon electronics, provides new avenues for developing monolithically integrated light-sources on conventional microchips.

  8. Silicon coupled with plasmon nanocavity generates bright visible hot-luminescence

    PubMed Central

    Cho, Chang-Hee; Aspetti, Carlos O.; Park, Joohee; Agarwal, Ritesh

    2013-01-01

    Due to limitations in device speed and performance of silicon-based electronics, silicon optoelectronics has been extensively studied to achieve ultrafast optical-data processing1–3. However, the biggest challenge has been to develop an efficient silicon-based light source since indirect band-gap of silicon gives rise to extremely low emission efficiency. Although light emission in quantum-confined silicon at sub-10 nm lengthscales has been demonstrated4–7, there are difficulties in integrating quantum structures with conventional electronics8,9. It is desirable to develop new concepts to obtain emission from silicon at lengthscales compatible with current electronic devices (20-100 nm), which therefore do not utilize quantum-confinement effects. Here, we demonstrate an entirely new method to achieve bright visible light emission in “bulk-sized” silicon coupled with plasmon nanocavities from non-thermalized carrier recombination. Highly enhanced emission quantum efficiency (>1%) in plasmonic silicon, along with its size compatibility with present silicon electronics, provides new avenues for developing monolithically integrated light-sources on conventional microchips. PMID:23710256

  9. Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

    SciTech Connect

    Zhang, Y.; Melnikov, A.; Mandelis, A.; Halliop, B.; Kherani, N. P.; Zhu, R.

    2015-03-15

    A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.

  10. Experimental Optoelectronic Associative Memory

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin

    1992-01-01

    Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

  11. Exceptional Optoelectronic Properties of Si-related compounds

    NASA Astrophysics Data System (ADS)

    Huang, Bing; Zhuang, Houlong; Yoon, Mina; Wei, Su-Huai; Sumpter, Bobby

    2015-03-01

    The search of new silicon-related functional compounds are of great interests but still very changeling. In the last few decades, researchers have heavily studied the structural and electronic properties of silicon in order to improve its optical absorption in the visible light range using analyses of metastable silicon phases, silicon-based alloys, and silicon-based superlattices. In this talk, I will present our recent theoretical efforts on searching and designing new silicon phases, from bulk to two-dimensional (2D) silicon, with exceptional optoelectronic properties. Especially, we find that chemically functionalized 2D silicon and silicon alloys could be the best candidates to create efficient thin-film solar absorbers and silicon-based, white-light-emitting diodes, paving the way for new ``green'' energy applications.

  12. Chip scale low dimensional materials: optoelectronics & nonlinear optics

    NASA Astrophysics Data System (ADS)

    Gu, Tingyi

    The CMOS foundry infrastructure enables integration of high density, high performance optical transceivers. We developed integrated devices that assemble resonators, waveguide, tapered couplers, pn junction and electrodes. Not only the volume standard manufacture in silicon foundry is promising to low-lost optical components operating at IR and mid-IR range, it also provides a robust platform for revealing new physical phenomenon. The thesis starts from comparison between photonic crystal and micro-ring resonators based on chip routers, showing photonic crystal switches have small footprint, consume low operation power, but its higher linear loss may require extra energy for signal amplification. Different designs are employed in their implementation in optical signal routing on chip. The second part of chapter 2 reviews the graphene based optoelectronic devices, such as modulators, lasers, switches and detectors, potential for group IV optoelectronic integrated circuits (OEIC). In chapter 3, the highly efficient thermal optic control could act as on-chip switches and (transmittance) tunable filters. Local temperature tuning compensates the wavelength differences between two resonances, and separate electrode is used for fine tuning of optical pathways between two resonators. In frequency domain, the two cavity system also serves as an optical analogue of Autler-Towns splitting, where the cavity-cavity resonance detuning is controlled by the length of pathway (phase) between them. The high thermal sensitivity of cavity resonance also effectively reflects the heat distribution around the nanoheaters, and thus derives the thermal conductivity in the planar porous suspended silicon membrane. Chapter 4 & 5 analyze graphene-silicon photonic crystal cavities with high Q and small mode volume. With negligible nonlinear response to the milliwatt laser excitation, the monolithic silicon PhC turns into highly nonlinear after transferring the single layer graphene with

  13. Surface modified aerogel monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas (Inventor); Johnston, James C. (Inventor); Kuczmarski, Maria A. (Inventor); Meador, Mary Ann B. (Inventor)

    2013-01-01

    This invention comprises reinforced aerogel monoliths such as silica aerogels having a polymer coating on its outer geometric surface boundary, and to the method of preparing said aerogel monoliths. The polymer coatings on the aerogel monoliths are derived from polymer precursors selected from the group consisting of isocyanates as a precursor, precursors of epoxies, and precursors of polyimides. The coated aerogel monoliths can be modified further by encapsulating the aerogel with the polymer precursor reinforced with fibers such as carbon or glass fibers to obtain mechanically reinforced composite encapsulated aerogel monoliths.

  14. A monolithic integrated photonic microwave filter

    NASA Astrophysics Data System (ADS)

    Fandiño, Javier S.; Muñoz, Pascual; Doménech, David; Capmany, José

    2016-12-01

    Meeting the increasing demand for capacity in wireless networks requires the harnessing of higher regions in the radiofrequency spectrum, reducing cell size, as well as more compact, agile and power-efficient base stations that are capable of smoothly interfacing the radio and fibre segments. Fully functional microwave photonic chips are promising candidates in attempts to meet these goals. In recent years, many integrated microwave photonic chips have been reported in different technologies. To the best of our knowledge, none has monolithically integrated all the main active and passive optoelectronic components. Here, we report the first demonstration of a tunable microwave photonics filter that is monolithically integrated into an indium phosphide chip. The reconfigurable radiofrequency photonic filter includes all the necessary elements (for example, lasers, modulators and photodetectors), and its response can be tuned by means of control electric currents. This is an important step in demonstrating the feasibility of integrated and programmable microwave photonic processors.

  15. Low-cost packaging of high-performance optoelectronic components

    SciTech Connect

    Lowry, M.; Lu, Shin-Yee; Pocha, M.; Strand, O.T.

    1994-08-01

    Optoelectronic component costs are often dominated by the costs of attaching fiber optic pigtails--especially for the case of single transverse mode devices. We present early results of our program in low-cost packaging. We are employing machine-vision controlled automated positioning and silicon microbench technology to reduce the costs of optoelectronic components. Our machine vision approach to automated positioning has already attained a positional accuracy of less than 5 microns in less than 5 minutes; accuracies and times are expected to improve significantly as the development progresses. Complementing the machine vision assembly is our manufacturable approach to silicon microbench technology. We will describe our silicon microbench optoelectronic device packages that incorporate built-in heaters for solder bonding reflow.

  16. Selectively Transparent and Conducting Photonic Crystals and their Potential to Enhance the Performance of Thin-Film Silicon-Based Photovoltaics and Other Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    O'Brien, Paul G.

    2011-12-01

    The byproducts of human engineered energy production are increasing atmospheric CO2 concentrations well above their natural levels and accompanied continual decline in the natural reserves of fossil fuels necessitates the development of green energy alternatives. Solar energy is attractive because it is abundant, can be produced in remote locations and consumed on site. Specifically, thin-film silicon-based photovoltaic (PV) solar cells have numerous inherent advantages including their availability, non-toxicity, and they are relatively inexpensive. However, their low-cost and electrical performance depends on reducing their thickness to as great an extent as possible. This is problematic because their thickness is much less than their absorption length. Consequently, enhanced light trapping schemes must be incorporated into these devices. Herein, a transparent and conducting photonic crystal (PC) intermediate reflector (IR), integrated into the rear side of the cell and serving the dual function as a back-reflector and a spectral splitter, is identified as a promising method of boosting the performance of thin-film silicon-based PV. To this end a novel class of PCs, namely selectively transparent and conducting photonic crystals (STCPC), is invented. These STCPCs are a significant advance over existing 1D PCs because they combine intense wavelength selective broadband reflectance with the transmissive and conductive properties of sputtered ITO. For example, STCPCs are made to exhibit Bragg-reflectance peaks in the visible spectrum of 95% reflectivity and have a full width at half maximum that is greater than 200nm. At the same time, the average transmittance of these STCPCs is greater than 80% over the visible spectrum that is outside their stop-gap. Using wave-optics analysis, it is shown that STCPC intermediate reflectors increase the current generated in micromorph cells by 18%. In comparison, the more conventional IR comprised of a single homogeneous

  17. A deep etching mechanism for trench-bridging silicon nanowires.

    PubMed

    Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Alaca, B Erdem

    2016-03-04

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

  18. Monolithic electronics for nuclear and high-energy physics experiments

    SciTech Connect

    Young, G.R.

    1994-12-31

    Electronic instrumentation for large fixed-target and collider experiments is rapidly moving to the use of highly integrated electronics wherever it is cost effective. This trend is aided by the development of circuit building blocks useful for nuclear and high-energy physics instrumentation and has accelerated recently with the development of monolithic silicon chips with multiple functions on one substrate. Examples of recent developments are given, together with remarks on the rationale for use of monolithic electronics and economic considerations.

  19. Optoelectronic Mounting Structure

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  20. Hybrid and monolithic integration of planar lightwave circuits (PLCs)

    NASA Astrophysics Data System (ADS)

    Chen, Ray T.

    2008-02-01

    In this paper, we review the status of monolithic and hybrid integration of planar lightwave circuits (PLCs). Building blocks needed for system integration based on polymeric materials, III-V semiconductor materials, LiNbO 3 and SOI on Silicon are summarized with pros and cons. Due to the maturity of silicon CMOS technology, silicon becomes the platform of choice for optical application specific integrated circuits (OASICs). However, the indirect bandgap of silicon makes the formation of electrically pumped silicon laser a remote plausibility which requires hybrid integration of laser sources made out of III-V compound semicouductor.

  1. Discussion of optoelectronic HMDASS

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Liu, Xu; Yang, Yi; Sun, Longhe; Liu, Hua

    2000-10-01

    The use of opto-electronic Helmet Mounted Display And Sight System (HMDASS) will decrease responding time for fighter in near distance tussle. See-through type Helmet Mounted Display (HMD), instead of the simple graduation board display, will provide more information and so much as integrate the FLTR image. We research some questions of TFTLCD device in optic- electric HMDASS application, such as luminance, information content & format etc. This paper discuss the luminance question in perspective type LCD-HMD and put forward a display method to increase the reaction velocity for a pilot using opto-electronic Helmet Mounted Sight (HMS).

  2. Silicon Carbide Photoconductive Switches

    DTIC Science & Technology

    1994-09-01

    The optoelectronic properties of p-type 6-H silicon carbide (6H-SiC) have been investigated in an experiment that used lateral and vertical...and the bandgap was determined to be approximately 3.1 eV. 6H-SiC, Photoconductive, Photovoltaic, Absorption coefficient, Switch, Silicon carbide

  3. Monolithic exploding foil initiator

    SciTech Connect

    Welle, Eric J; Vianco, Paul T; Headley, Paul S; Jarrell, Jason A; Garrity, J. Emmett; Shelton, Keegan P; Marley, Stephen K

    2012-10-23

    A monolithic exploding foil initiator (EFI) or slapper detonator and the method for making the monolithic EFI wherein the exploding bridge and the dielectric from which the flyer will be generated are integrated directly onto the header. In some embodiments, the barrel is directly integrated directly onto the header.

  4. Nano-Optoelectronic Integration on Silicon

    DTIC Science & Technology

    2012-12-14

    substrate is first cleaned with acetone, methanol, and water for 3 minutes at each step. Afterwards, the substrate is deoxidized by buffered oxide etch...2410) is then spun onto samples, followed by e-beam lithography to define etch mask patterns over select nanopillars. Buffered oxide etch (BOE) 5:1...plasma to expose the SiO2 on both sidewalls and nanopillar tops. A quick dip in buffered oxide etch (BOE) then removed this SiO2 while the remaining

  5. A luminescence lifetime-based capillary oxygen sensor utilizing monolithically integrated organic photodiodes.

    PubMed

    Lamprecht, Bernhard; Tschepp, Andreas; Čajlaković, Merima; Sagmeister, Martin; Ribitsch, Volker; Köstler, Stefan

    2013-10-21

    A novel optical sensor device monolithically integrated on a glass capillary is presented. Therefore, we took advantage of the ability to fabricate organic optoelectronic devices on non-planar substrates. The functionality of the concept is demonstrated by realizing an integrated oxygen sensor based on luminescence decay time measurement.

  6. Picosecond optoelectronic devices

    SciTech Connect

    Lee, C.L.

    1984-01-01

    Ever since the invention of picosecond lasers, scientists and electronic engineers have been dreaming of inventing electronic devices that can record in real time the physical and electronic events that take place on picosecond time scales. With the exception of the expensive streak camera, this dream has been largely unfullfilled. Today, a real-time oscilloscope with picosecond time resolution is still not available. To fill the need for even better time resolution, researchers have turned to optical pulses and thus a hybrid technology has emerged-picosecond optoelectronics. This technology, based on bulk photoconductors, has had a slow start. However, because of the simplicity, scaleability, and jitterfree nature of the devices, the technology has recently experienced a rapid growth. This volume reviews the major developments in the field of picosecond optoelectronics over the past decade.

  7. Complexation of Optoelectronic Systems

    NASA Astrophysics Data System (ADS)

    Boreisho, A. S.; Il‧in, M. Yu.; Konyaev, M. A.; Mikhailenko, A. S.; Morozov, A. V.; Strakhov, S. Yu.

    2016-05-01

    Problems of increasing the efficiency and the functionality of complex optoelectronic systems for monitoring real atmospheric conditions and of their use are discussed. It is shown by the example of a meteorological complex comprising an infrared wind-sensing lidar and an X-range Doppler radar that the complexation of probing systems working in different electromagnetic-radiation ranges opens up new opportunities for determining the meteorological parameters of a turbulent atmosphere and investigating the interaction of radiation with it.

  8. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  9. Metal oxides for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  10. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: A1-Based III-V Native Oxides

    DTIC Science & Technology

    1992-05-01

    lateral direction. guide layer. The effect of the optical waveguide is shown by the The laser fabrication begins with the deposition on the near-field...to manipulate photons around a "chip," e.g., The laser fabrication begins with the patterning of for optoelectronic integrated circuits (OEICs), a

  11. A Modular and Compact Multidetector System Based on Monolithic Telescopes

    SciTech Connect

    Figuera, P.; Cardella, G.; Di Pietro, A.; Papa, M.; Tian, W.; Amorini, F.; Musumarra, A.; Pappalardo, G.; Rizzo, F.; Tudisco, S.; Fallica, G.; Valvo, G.

    2004-02-27

    The characteristics of a new multidetector based on the use of Monolithic Silicon Telescopes are presented. Using suitable ion implantation techniques, the {delta}E and residual energy stages of the telescopes have been integrated on a single Si chip, obtaining a typical thickness for the {delta}E stage of the order of 2{mu}m.

  12. WARRP Core: Optoelectronic Implementation of Network-Router Deadlock-Handling Mechanisms.

    PubMed

    Pinkston, T M; Raksapatcharawong, M; Choi, Y

    1998-01-10

    The wormhole adaptive recovery-based routing via pre-emption(WARRP) core optoelectronic chip, which integrates coredeadlock-handling circuitry for a fully adaptive deadlock-freemultiprocessor network router, is presented. This chip demonstratesprimarily the integration of complex deadlock-recovery circuitry andfree-space optoelectronic input-output on a monolithicGaAs-based chip. The design and implementation of thefirst-generation, bit-serial, torus-connected chip that uses 1400transistors and six light-emitting diode-photodetector pairs is presented.

  13. Optoelectronics based on 2D TMDs and heterostructures

    NASA Astrophysics Data System (ADS)

    Huo, Nengjie; Yang, Yujue; Li, Jingbo

    2017-03-01

    2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications. We reviewed the growth, characterization and optoelectronics based on 2D TMDs and their heterostructures, and demonstrated their unique and high quality of performances. For example, we observed the large mobility, fast response and high photo-responsivity in MoS2, WS2 and WSe2 phototransistors, as well as the novel performances in vdW heterostructures such as the strong interlayer coupling, am-bipolar and rectifying behaviour, and the obvious photovoltaic effect. It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics, more even than traditional semiconductors such as silicon.

  14. Optoelectronic technology consortium

    NASA Astrophysics Data System (ADS)

    Hibbs-Brenner, Mary

    1992-12-01

    The Optoelectronics Technology Consortium has been established to position U.S. industry as the world leader in optical interconnect technology by developing, fabricating, intergrating and demonstrating the producibility of optoelectronic components for high-density/high-data-rate processors and accelerating the insertion of this technology into military and commercial applications. This objective will be accomplished by a program focused in three areas. (1) Demonstrated performance: OETC will demonstrate an aggregate data transfer rate of 16 Gbit/s between single transmitter and receiver packages, as well as the expandability of this technology by combing four links in parallel to achieve a 64 Gbit/s link. (2) Accelerated development: By collaborating during precompetitive technology development stage, OTEC will advance the development of optical components and produce links for a multiboard processor testbed demonstration; and (3) Producibility: OETC's technology will achieve this performance by using components that are affordable, and reliable, with a line BER less than 10(exp -15) and MTTF greater than 10(exp 6) hours.

  15. Monolithic cells for solar fuels.

    PubMed

    Rongé, Jan; Bosserez, Tom; Martel, David; Nervi, Carlo; Boarino, Luca; Taulelle, Francis; Decher, Gero; Bordiga, Silvia; Martens, Johan A

    2014-12-07

    Hybrid energy generation models based on a variety of alternative energy supply technologies are considered the best way to cope with the depletion of fossil energy resources and to limit global warming. One of the currently missing technologies is the mimic of natural photosynthesis to convert carbon dioxide and water into chemical fuel using sunlight. This idea has been around for decades, but artificial photosynthesis of organic molecules is still far away from providing real-world solutions. The scientific challenge is to perform in an efficient way the multi-electron transfer reactions of water oxidation and carbon dioxide reduction using holes and single electrons generated in an illuminated semiconductor. In this tutorial review the design of photoelectrochemical (PEC) cells that combine solar water oxidation and CO2 reduction is discussed. In such PEC cells simultaneous transport and efficient use of light, electrons, protons and molecules has to be managed. It is explained how efficiency can be gained by compartmentalisation of the water oxidation and CO2 reduction processes by proton exchange membranes, and monolithic concepts of artificial leaves and solar membranes are presented. Besides transferring protons from the anode to the cathode compartment the membrane serves as a molecular barrier material to prevent cross-over of oxygen and fuel molecules. Innovative nano-organized multimaterials will be needed to realise practical artificial photosynthesis devices. This review provides an overview of synthesis techniques which could be used to realise monolithic multifunctional membrane-electrode assemblies, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi) engineering. Advances in modelling approaches, electrochemical techniques and in situ spectroscopies to characterise overall PEC cell performance are discussed.

  16. Monolithic microwave integrated circuits

    NASA Astrophysics Data System (ADS)

    Pucel, R. A.

    Monolithic microwave integrated circuits (MMICs), a new microwave technology which is expected to exert a profound influence on microwave circuit designs for future military systems as well as for the commercial and consumer markets, is discussed. The book contains an historical discussion followed by a comprehensive review presenting the current status in the field. The general topics of the volume are: design considerations, materials and processing considerations, monolithic circuit applications, and CAD, measurement, and packaging techniques. All phases of MMIC technology are covered, from design to testing.

  17. The Impact of Silicon Photonics

    DTIC Science & Technology

    2007-08-29

    integrated photonics 16. SECURITY CLASSIFICATION OF: 17.LIMITATION OF ABSTRACT 18.NUMBER OF PAGES 19a. NAME OF RESPONSIBLE PERSON Richard Soref...The impact of present and potential applications is discussed. key words: silicon, optoelectronics, integrated photonics 1. Introduction Silicon

  18. Optoelectronic Reservoir Computing

    PubMed Central

    Paquot, Y.; Duport, F.; Smerieri, A.; Dambre, J.; Schrauwen, B.; Haelterman, M.; Massar, S.

    2012-01-01

    Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations. PMID:22371825

  19. Materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  20. Internally Cooled Monolithic Silicon Nitride Aerospace Components

    NASA Technical Reports Server (NTRS)

    Best, Jonathan E.; Cawley, James D.; Bhatt, Ramakrishna T.; Fox, Dennis S.; Lang, Jerry (Technical Monitor)

    2000-01-01

    A set of rapid prototyping (RP) processes have been combined with gelcasting to make ceramic aerospace components that contain internal cooling geometry. A mold and core combination is made using a MM6Pro (Sanders Prototyping, Inc.) and SLA-250/40 (3Dsystems, Inc.). The MM6Pro produces cores from ProtoBuild (trademarked) wax that are dissolved in room temperature ethanol following gelcasting. The SLA-250/40 yields epoxy/acrylate reusable molds. Parts produced by this method include two types of specimens containing a high density of thin long cooling channels, thin-walled cylinders and plates, as well as a model hollow airfoil shape that can be used for burner rig evaluation of coatings. Both uncoated and mullite-coated hollow airfoils has been tested in a Mach 0.3 burner rig with cooling air demonstrating internal cooling and confirming the effectiveness of mullite coatings.

  1. Photonics and Optoelectronics

    DTIC Science & Technology

    2013-03-07

    Distribution Outline/Agenda • Nanophotonics: plasmonics, nanostructures, metasurfaces etc • Integrated Nanophotonics & Silicon Photonics...Highlights Nanophotonics Nanophotonics: metasurfaces , nanostructures, plasmonics etc • Shalaev – Broadband Light Bending with Plasmonic...solitons, slot waveguide, “ Metasurface ” collimator etc " World Changing Ideas 2012” Electronic Tattoos, sciencemag , J. Rogers UICU P

  2. Embedded-monolith armor

    DOEpatents

    McElfresh, Michael W.; Groves, Scott E; Moffet, Mitchell L.; Martin, Louis P.

    2016-07-19

    A lightweight armor system utilizing a face section having a multiplicity of monoliths embedded in a matrix supported on low density foam. The face section is supported with a strong stiff backing plate. The backing plate is mounted on a spall plate.

  3. Locally oxidized silicon surface-plasmon Schottky detector for telecom regime.

    PubMed

    Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

    2011-06-08

    We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip.

  4. Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

    PubMed

    Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

    2012-12-17

    We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

  5. Monolithic short wave infrared (SWIR) detector array

    NASA Technical Reports Server (NTRS)

    1983-01-01

    A monolithic self-scanned linear detector array was developed for remote sensing in the 1.1- 2.4-micron spectral region. A high-density IRCCD test chip was fabricated to verify new design approaches required for the detector array. The driving factors in the Schottky barrier IRCCD (Pdsub2Si) process development are the attainment of detector yield, uniformity, adequate quantum efficiency, and lowest possible dark current consistent with radiometric accuracy. A dual-band module was designed that consists of two linear detector arrays. The sensor architecture places the floating diffusion output structure in the middle of the chip, away from the butt edges. A focal plane package was conceptualized and includes a polycrystalline silicon substrate carrying a two-layer, thick-film interconnecting conductor pattern and five epoxy-mounted modules. A polycrystalline silicon cover encloses the modules and bond wires, and serves as a radiation and EMI shield, thermal conductor, and contamination seal.

  6. Towards an optoelectronic luminescent sensing device

    NASA Astrophysics Data System (ADS)

    Papkovsky, Dmitry B.; Ponomarev, Gely V.; Ogurtsov, Vladimir I.; Dvornikov, Alexey A.

    1994-02-01

    The new dye which has improved spectral characteristics synthesized on the basis of platinum complex of the porphyrin-like compound was studied with the view of its application to oxygen sensing. It resulted in a new solid-state oxygen-sensitive material with advanced working characteristics which is highly compatible with excitation with yellow LEDs. This new sensing material makes it possible to develop simple fiber-optoelectronic devices -- prototype oxygen sensors. One of the embodiments was constructed which utilizes powerful yellow LED as a light source, silicone photodiode as a photodetector, and has a fiber-optic output terminated with an active element (oxygen membrane). The electronic scheme of the device provides modulation of LED at a kilohertz range frequency and is capable of measuring specific luminescent signal. The system is now under improvement and optimization with emphasis to lifetime measurements performed by phase method.

  7. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    NASA Astrophysics Data System (ADS)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  8. Coupling efficiency of monolithic, waveguide-integrated Si photodetectors

    NASA Astrophysics Data System (ADS)

    Ahn, Donghwan; Hong, Ching-yin; Kimerling, Lionel C.; Michel, Jurgen

    2009-02-01

    A waveguide-integrated photodetector provides a small-footprint, low-capacitance design that overcomes the bandwidth-efficiency trade-off problem of free space optics. High performance silicon devices are critical to the emergence of electronic-photonic integrated circuits on the complementary metal oxide semiconductor platform. We have fabricated vertical p-i-n silicon photodetectors that are monolithically integrated with compact silicon oxynitride channel waveguides. We report over 90% coupling efficiency of 830 nm light from the silicon oxynitride (SiOxNy) channel waveguide to the silicon photodetector. We analyze the dependence of coupling on waveguide index by comparing coupling from low index-contrast waveguides and high index-contrast waveguides.

  9. Monolithic MACS micro resonators

    NASA Astrophysics Data System (ADS)

    Lehmann-Horn, J. A.; Jacquinot, J.-F.; Ginefri, J. C.; Bonhomme, C.; Sakellariou, D.

    2016-10-01

    Magic Angle Coil Spinning (MACS) aids improving the intrinsically low NMR sensitivity of heterogeneous microscopic samples. We report on the design and testing of a new type of monolithic 2D MACS resonators to overcome known limitations of conventional micro coils. The resonators' conductors were printed on dielectric substrate and tuned without utilizing lumped element capacitors. Self-resonance conditions have been computed by a hybrid FEM-MoM technique. Preliminary results reported here indicate robust mechanical stability, reduced eddy currents heating and negligible susceptibility effects. The gain in B1 /√{ P } is in agreement with the NMR sensitivity enhancement according to the principle of reciprocity. A sensitivity enhancement larger than 3 has been achieved in a monolithic micro resonator inside a standard 4 mm rotor at 500 MHz. These 2D resonators could offer higher performance micro-detection and ease of use of heterogeneous microscopic substances such as biomedical samples, microscopic specimens and thin film materials.

  10. Monolithic Millimeter Wave Oscillator

    NASA Astrophysics Data System (ADS)

    Wang, Nan-Lei

    There is an increasing interest in the millimeter -wave spectrum for use in communications and for military and scientific applications. The concept of monolithic integration aims to produce very-high-frequency circuits in a more reliable, reproducible way than conventional electronics, and also at lower cost, with smaller size and lighter weight. In this thesis, a negative resistance device is integrated monolithically with a resonator to produce an effective oscillator. This work fills the void resulting from the exclusion of the local oscillator from the monolithic millimeter-wave integrated circuit (MMMIC) receiver design. For convenience a microwave frequency model was used to design the resonator circuit. A 5 GHz hybrid oscillator was first fabricated to test the design; the necessary GaAs process technology was developed for the fabrication. Negative resistance devices and oscillator theory were studied, and a simple but practical model of the Gunn diode was devised to solve the impedance matching problem. Monolithic oscillators at the Ka band (35 GHz) were built and refined. All devices operated in CW mode. By means of an electric-field probe, the output power was coupled into a metallic waveguide for measurement purposes. The best result was 3.63 mW of power output, the highest efficiency was 0.43% and the frequency stability was better than 10-4. In the future, an IMPATT diode could replace the Gunn device to give much higher power and efficiency. A varactor-tuned circuit also suitable for large-scale integration is under study.

  11. Monolith electroplating process

    DOEpatents

    Agarrwal, Rajev R.

    2001-01-01

    An electroplating process for preparing a monolith metal layer over a polycrystalline base metal and the plated monolith product. A monolith layer has a variable thickness of one crystal. The process is typically carried in molten salts electrolytes, such as the halide salts under an inert atmosphere at an elevated temperature, and over deposition time periods and film thickness sufficient to sinter and recrystallize completely the nucleating metal particles into one single crystal or crystals having very large grains. In the process, a close-packed film of submicron particle (20) is formed on a suitable substrate at an elevated temperature. The temperature has the significance of annealing particles as they are formed, and substrates on which the particles can populate are desirable. As the packed bed thickens, the submicron particles develop necks (21) and as they merge into each other shrinkage (22) occurs. Then as micropores also close (23) by surface tension, metal density is reached and the film consists of unstable metal grain (24) that at high enough temperature recrystallize (25) and recrystallized grains grow into an annealed single crystal over the electroplating time span. While cadmium was used in the experimental work, other soft metals may be used.

  12. Picosecond Optoelectronic Transceivers.

    DTIC Science & Technology

    1988-01-01

    and 200Kev 0+ ions to a dosage of 10 cm . The antennas were fabricated on the radiatioh damaged substrates from aluminum films using standard...epilayer with energetic ions. In our experiments we bombarded the silicon with lOOkev and 200kev 0+ ions to a dosage of 101 5 cm - 2. The antennas were... dosages of 10A15 / cmA2. Standard photolithographic techniques ’were used to etch the antenna pattern in the thermally evaporated aluminum film. The

  13. Optical waveguide formed by cubic silicon carbide on sapphire substrates

    NASA Technical Reports Server (NTRS)

    Tang, Xiao; Wongchotigul, Kobchat; Spencer, Michael G.

    1991-01-01

    Optical confinement in beta silicon carbide (beta-SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin beta-SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far-field mode patterns are shown. It is believed that this is the first step in validating a silicon carbide optoelectronic technology.

  14. Optoelectronics with Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Kinoshita, Megumi

    2011-12-01

    purified tubes aligned in parallel. While the operating principle is somewhat different from that of single-tube diodes because of the presence of metallic tubes in the material, the film diodes nonetheless show a rectifying behavior and much greater light intensity than single-tube devices. With their superior light output and robustness, they bring us one step closer to a real-world application of carbon nanotubes optoelectronics.

  15. Monolithic and Flexible ZnS/SnO2 Ultraviolet Photodetectors with Lateral Graphene Electrodes.

    PubMed

    Zhang, Cheng; Xie, Yunchao; Deng, Heng; Tumlin, Travis; Zhang, Chi; Su, Jheng-Wun; Yu, Ping; Lin, Jian

    2017-03-15

    A continuing trend of miniaturized and flexible electronics/optoelectronic calls for novel device architectures made by compatible fabrication techniques. However, traditional layer-to-layer structures cannot satisfy such a need. Herein, a novel monolithic optoelectronic device fabricated by a mask-free laser direct writing method is demonstrated in which in situ laser induced graphene-like materials are employed as lateral electrodes for flexible ZnS/SnO2 ultraviolet photodetectors. Specifically, a ZnS/SnO2 thin film comprised of heterogeneous ZnS/SnO2 nanoparticles is first coated on polyimide (PI) sheets by a solution process. Then, CO2 laser irradiation ablates designed areas of the ZnS/SnO2 thin film and converts the underneath PI into highly conductive graphene as the lateral electrodes for the monolithic photodetectors. This in situ growth method provides good interfaces between the graphene electrodes and the semiconducting ZnS/SnO2 resulting in high optoelectronic performance. The lateral electrode structure reduces total thickness of the devices, thus minimizing the strain and improving flexibility of the photodetectors. The demonstrated lithography-free monolithic fabrication is a simple and cost-effective method, showing a great potential for developement into roll-to-roll manufacturing of flexible electronics.

  16. Laser micromachining of thin films for optoelectronic devices and packages

    NASA Astrophysics Data System (ADS)

    Moore, David F.; Williams, John A.; Hopcroft, Matthew A.; Boyle, Billy; He, Johnny H.; Syms, Richard R. A.

    2003-04-01

    Focused laser micromachining in an optical microscope system is used to prototype packages for optoelectronic devices and to investigate new materials with potential applications in packaging. Micromachined thin fims are proposed as mechanical components to locate fibers and other optical and electrical components on opto-assemblies. This paper reports prototype structures which are micromachined in silicon carbide to produce beams 5 μm thick by (1) laser cutting a track in a SiC coated Si wafer, (2) undercutting by anisotropic silicon etching using KOH in water, and (3) trimming if necessary with the laser system. This approach has the advantage of fast turn around and proof of concept. Mechanical test data are obtained from the prototype SiC beam package structures by testing with a stylus profilometer. The Youngs modulus obtained for chemical vapor deposited silicon carbide is 360 +/- 50 GPa indicating that it is a promising material for packaging applications.

  17. Recent developments in InP-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Venghaus, H.; Bach, H.-G.; Bauer, S.; Beling, A.; Heidrich, H.; Hoffman, D.; Hüttl, B.; Kaiser, R.; Kreissl, J.; Mekonnen, G. G.; Möhrle, M.; Rehbein, W.; Sartorius, B.; Velthaus, K.-O.

    2005-09-01

    Recent development trends in InP-based optoelectronic devices are illustrated by means of selected examples. These include lasers for uncooled operation and direct modulation at 10 Gbit/s, complex-coupled lasers, which exhibit particularly low sensitivity to back reflections as well as monolithic mode-locked semiconductor lasers as ps-pulse sources for OTDM applications. Furthermore, a Mach-Zehnder interferometer modulator for high bit rate applications (40 Gbit/s and beyond) is described, and finally, photoreceivers and ultra high-speed waveguide-integrated photodiodes with > 100 GHz bandwidth are presented, which are key component for high bit rate systems, advanced modulation format transmission links, and for high speed measurement equipment as well.

  18. Monolithic tandem solar cell

    DOEpatents

    Wanlass, Mark W.

    1991-01-01

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

  19. Coupled opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Yao, X. Steve (Inventor); Maleki, Lute (Inventor)

    1999-01-01

    A coupled opto-electronic oscillator that directly couples a laser oscillation with an electronic oscillation to simultaneously achieve a stable RF oscillation at a high frequency and ultra-short optical pulsation by mode locking with a high repetition rate and stability. Single-mode selection can be achieved even with a very long opto-electronic loop. A multimode laser can be used to pump the electronic oscillation, resulting in a high operation efficiency. The optical and the RF oscillations are correlated to each other.

  20. Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping

    NASA Astrophysics Data System (ADS)

    Montanaro, A.; Mzali, S.; Mazellier, J.-P.; Molin, S.; Larat, C.; Bezencenet, O.; Legagneux, P.

    2016-09-01

    Due to its remarkable properties, graphene-based devices are particularly promising for optoelectronic applications. Thanks to its compatibility with standard silicon technology, graphene could compete III-V compounds for the development of low cost and high-frequency optoelectronic devices. We present a new optoelectronic device that consists in a coplanar waveguide integrating a commercially-available CVD graphene active channel. With this structure, we demonstrate high-frequency (30 GHz) broadband optoelectronic mixing in graphene, by measuring the response of the device to an optical intensity-modulated excitation and an electrical excitation at the same time. These features are particularly promising for RADAR and LIDAR applications, as well as for low-cost high-speed communication systems.

  1. Design of monoliths through their mechanical properties.

    PubMed

    Podgornik, Aleš; Savnik, Aleš; Jančar, Janez; Krajnc, Nika Lendero

    2014-03-14

    Chromatographic monoliths have several interesting properties making them attractive supports for analytics but also for purification, especially of large biomolecules and bioassemblies. Although many of monolith features were thoroughly investigated, there is no data available to predict how monolith mechanical properties affect its chromatographic performance. In this work, we investigated the effect of porosity, pore size and chemical modification on methacrylate monolith compression modulus. While a linear correlation between pore size and compression modulus was found, the effect of porosity was highly exponential. Through these correlations it was concluded that chemical modification affects monolith porosity without changing the monolith skeleton integrity. Mathematical model to describe the change of monolith permeability as a function of monolith compression modulus was derived and successfully validated for monoliths of different geometries and pore sizes. It enables the prediction of pressure drop increase due to monolith compressibility for any monolith structural characteristics, such as geometry, porosity, pore size or mobile phase properties like viscosity or flow rate, based solely on the data of compression modulus and structural data of non-compressed monolith. Furthermore, it enables simple determination of monolith pore size at which monolith compressibility is the smallest and the most robust performance is expected. Data of monolith compression modulus in combination with developed mathematical model can therefore be used for the prediction of monolith permeability during its implementation but also to accelerate the design of novel chromatographic monoliths with desired hydrodynamic properties for particular application.

  2. Monolithically integrated semiconductor ring lasers: Design, fabrication, and directional control

    NASA Astrophysics Data System (ADS)

    Cao, Hongjun

    Monolithic semiconductor ring lasers (SRLs) are attractive light sources for optoelectronic integrated circuits (OEICs) due to their convenience in monolithic integration: neither cleaved facets nor gratings are required for optical feedback. They are promising candidates for wavelength filtering, multiplexing-demultiplexing applications, electrical or all-optical switching, gating, and memories, and particularly, optical inertial rotation sensors or ring laser gyros. As the major part of a NASA-supported project "Monolithically integrated semiconductor ring laser gyro for space applications," this dissertation research was focused on design, fabrication, and directional control of monolithically integrated SRLs with relatively large size and sophisticated OEIC structures. The main potential application is the next-generation monolithic ring laser gyros. Specifically, monolithic SRLs with the longest reported cavity of 10.28 mm have been demonstrated. In device characterization, differential I-V analysis has been used for the first time in SRLs for purely electrical identification of lasing threshold and directional switching. Sophisticated device structures have been devised, including optically independent novel ring laser pairs, from which frequency beating between monolithically integrated SRLs was reported for the first time. In addition, no frequency lock-in was observed in the beating spectra, indicating an important progress for proposed gyro applications. Functional OEIC components including photodetectors, passive and active waveguides, and novel Joule heaters have been integrated on-chip along with the ring lasers. Mode competition, directional switching, bistability, and bidirectional and unidirectional operation in SRLs have been investigated. Directional control techniques with asymmetric mechanisms including spiral and S-section waveguides have been implemented. The S-section was investigated and analyzed in great detail for its suppression of

  3. Polymeric optoelectronic interconnects

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.

    2000-04-01

    Electrical interconnects are reaching their fundamental limits and are becoming the speed bottleneck as processor speeds are increasing. A polymer-based interconnect technology was developed for affordable integrated optical circuits that address the optical signal processing needs in the telecom, datacom, and performance computing industries. We engineered organic polymers that can be readily made into single-mode, multimode, and micro-optical waveguide structures of controlled numerical apertures and geometries. These materials are formed from highly-crosslinked acrylate monomers with specific linkages that determine properties such as flexibility, robustness, optical loss, thermal stability, and humidity resistance. These monomers are intermiscible, providing for precise continuous adjustment of the refractive index over a wide range. In polymer form, they exhibit state-of-the-art loss values and exceptional environmental stability, enabling use in a variety of demanding applications. A wide range of rigid and flexible substrates can be used, including glass, quartz, silicon, glass-filled epoxy printed circuit board substrates, and flexible plastic films. The devices we describe include a variety of routing elements that can be sued as part of a massively parallel photonic integrated circuit on the MCM, board, or backplane level.

  4. Monolithic optical parametric oscillators

    NASA Astrophysics Data System (ADS)

    Breunig, Ingo; Beckmann, Tobias; Buse, Karsten

    2012-02-01

    Stability and footprint of optical parametric oscillators (OPOs) strongly depend on the cavity used. Monolithic OPOs tend to be most stable and compact since they do not require external mirrors that have to be aligned. The most straightforward way to get rid of the mirrors is to coat the end faces of the nonlinear crystal. Whispering gallery resonators (WGRs) are a more advanced solution since they provide ultra-high reflectivity over a wide spectral range without any coating. Furthermore, they can be fabricated out of nonlinear-optical materials like lithium niobate. Thus, they are ideally suited to serve as a monolithic OPO cavity. We present the experimental realization of optical parametric oscillators based on whispering gallery resonators. Pumped at 1 μm wavelength, they generate signal and idler fields tunable between 1.8 and 2.5 μm wavelength. We explore different schemes, how to phase match the nonlinear interaction in a WGR. In particular, we show improvements in the fabrication of quasi-phase-matching structures. They enable great flexibility for the tuning and for the choice of the pump laser.

  5. Monolithic THz Frequency Multipliers

    NASA Technical Reports Server (NTRS)

    Erickson, N. R.; Narayanan, G.; Grosslein, R. M.; Martin, S.; Mehdi, I.; Smith, P.; Coulomb, M.; DeMartinez, G.

    2001-01-01

    Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.

  6. Monolithic ballasted penetrator

    DOEpatents

    Hickerson, Jr., James P.; Zanner, Frank J.; Baldwin, Michael D.; Maguire, Michael C.

    2001-01-01

    The present invention is a monolithic ballasted penetrator capable of delivering a working payload to a hardened target, such as reinforced concrete. The invention includes a ballast made from a dense heavy material insert and a monolithic case extending along an axis and consisting of a high-strength steel alloy. The case includes a nose end containing a hollow portion in which the ballast is nearly completely surrounded so that no movement of the ballast relative to the case is possible during impact with a hard target. The case is cast around the ballast, joining the two parts together. The ballast may contain concentric grooves or protrusions that improve joint strength between the case and ballast. The case further includes a second hollow portion; between the ballast and base, which has a payload fastened within this portion. The penetrator can be used to carry instrumentation to measure the geologic character of the earth, or properties of arctic ice, as they pass through it.

  7. Simple Optoelectronic Feedback in Microwave Oscillators

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Iltchenko, Vladimir

    2009-01-01

    A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

  8. A monolithic bolometer array suitable for FIRST

    NASA Technical Reports Server (NTRS)

    Bock, J. J.; LeDuc, H. G.; Lange, A. E.; Zmuidzinas, J.

    1997-01-01

    The development of arrays of infrared bolometers that are suitable for use in the Far Infrared and Submillimeter Telescope (FIRST) mission is reported. The array architecture is based on the silicon nitride micromesh bolometer currently baselined for use in the case of the Planck mission. This architecture allows each pixel to be efficiently coupled to one or both polarizations and to one or more spatial models of radiation. Micromesh structures are currently being developed, coupled with transistor-edge sensors and read out by a SQUID amplifier. If these devices are successful, then the relatively large cooling power available at 300 mK may enable a SQUID-based multiplexer to be integrated on the same wafer as the array, creating a monolithic, fully multiplexed, 2D array with relatively few connections to the sub-Kelvin stage.

  9. Telemedicine optoelectronic biomedical data processing system

    NASA Astrophysics Data System (ADS)

    Prosolovska, Vita V.

    2010-08-01

    The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

  10. Allyl-silica Hybrid Monoliths For Chromatographic Application

    NASA Astrophysics Data System (ADS)

    Guo, Wenjuan

    procedure. Important parameters that influence the morphology of the allyl-silica hybrid material, such as the type and monomer ratio of silanes, the amount of porogenic material, the hydrolysis reaction time, the gelation temperature, the water to silicon ratio has been optimized. In addition, factors that affect the volume shrinkage including the fourth precursor, capillary filling temperature, the aging temperature and aging time and the fine tuning of PEG amount have been discussed in details. The pH stability of allyl-silica hybrid (III) monolithic column has been compared with that of TMOS monolithic column and allyl-silica hybrid (I) monolithic column. Details of the preparation, characterization and the initial chromatographic performance of the allyl-silica hybrid monolith are reported. Good peak asymmetry is obtained for the separation of basic analytes. Allyl-functionalized silica hybrid monolithic structures have also been synthesized for use in CEC, nano-LC and HPLC. The monolithic material is synthesized in a "one pot" reaction approach that provides the functionalized silica support material containing accessible allyl organic groups. The allyl and methyl moieties at the surface with significantly hydrophobic characteristics, can be used as stationary phase directly and provide chromatographic selectivity. Capillary liquid chromatography (CLC) and capillary electrochromatography (CEC) were used to demonstrate the chromatographic kinetics of the hybrid monolith. Evaluation of the stationary phase for HPLC was performed using alkylbenzene as model compounds.

  11. Monolithic dye laser amplifier

    DOEpatents

    Kuklo, T.C.

    1993-03-30

    A fluid dye laser amplifier for amplifying a dye beam by pump beams has a channel structure defining a channel through which a laseable fluid flows and the dye and pump beams pass transversely to one another through a lasing region. The channel structure is formed with two pairs of mutually spaced-apart and mutually confronting glass windows, which are interlocked and make surface-contacts with one another and surround the lasing region. One of the glass window pairs passes the dye beam and the other passes the pump beams therethrough and through the lasing region. Where these glass window pieces make surface-contacts, glue is used to join the pieces together to form a monolithic structure so as to prevent the dye in the fluid passing through the channel from entering the space between the mutually contacting glass window pieces.

  12. Monolithically compatible impedance measurement

    DOEpatents

    Ericson, Milton Nance; Holcomb, David Eugene

    2002-01-01

    A monolithic sensor includes a reference channel and at least one sensing channel. Each sensing channel has an oscillator and a counter driven by the oscillator. The reference channel and the at least one sensing channel being formed integrally with a substrate and intimately nested with one another on the substrate. Thus, the oscillator and the counter have matched component values and temperature coefficients. A frequency determining component of the sensing oscillator is formed integrally with the substrate and has an impedance parameter which varies with an environmental parameter to be measured by the sensor. A gating control is responsive to an output signal generated by the reference channel, for terminating counting in the at least one sensing channel at an output count, whereby the output count is indicative of the environmental parameter, and successive ones of the output counts are indicative of changes in the environmental parameter.

  13. Monolithic dye laser amplifier

    DOEpatents

    Kuklo, Thomas C.

    1993-01-01

    A fluid dye laser amplifier for amplifying a dye beam by pump beams has a channel structure defining a channel through which a laseable fluid flows and the dye and pump beams pass transversely to one another through a lasing region. The channel structure is formed with two pairs of mutually spaced-apart and mutually confronting glass windows, which are interlocked and make surface-contacts with one another and surround the lasing region. One of the glass window pairs passes the dye beam and the other passes the pump beams therethrough and through the lasing region. Where these glass window pieces make surface-contacts, glue is used to join the pieces together to form a monolithic structure so as to prevent the dye in the fluid passing through the channel from entering the space between the mutually contacting glass window pieces.

  14. A platform for monolithic CMOS-MEMS integration on SOI wafers

    NASA Astrophysics Data System (ADS)

    Villarroya, María; Figueras, Eduard; Montserrat, Josep; Verd, Jaume; Teva, Jordi; Abadal, Gabriel; Pérez Murano, Francesc; Esteve, Jaume; Barniol, Núria

    2006-10-01

    A new platform for micro- and nano-electromechanical systems based on crystalline silicon as the structural layer in CMOS substrates is presented. This platform is fabricated using silicon on insulator (SOI) substrates, which allows the monolithic integration of the mechanical transducer on crystalline silicon while the characteristics of the structural layer are kept independent from the CMOS technology. We report the design characteristics, the fabrication process and an example of application of the CMOS SOI-MEMS platform to obtain a mass sensor based on a crystalline silicon resonating cantilever.

  15. III-Nitride nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  16. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    PubMed

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  17. Monolithic integration of microelectronics and photonics using molecularly engineered materials

    NASA Astrophysics Data System (ADS)

    Kubacki, Ronald M.

    2005-03-01

    The monolithic integration of CMOS microelectronics with photonics is inevitable and benefits both technologies. Photonic integration to microelectronics provides such solutions as overcoming microprocessor communication roadblocks through the use of optical interconnection. Microelectronic integration can provide benefits to photonic structures by optimizing electronic signals generated by photonic biosensors for example. Photonic integration must complement, build on, and enhance the existing state of CMOS microelectronic technology. Photonic approaches that ignore the realities of CMOS architectures (such as power and thermal limitations), provide little benefit to the CMOS device performance, are incompatible with CMOS silicon manufacturing processes, or are incapable of achieving levels of long term reliability already well demonstrated by microelectronic devices, give little reason for photonic/microelectronic integration. Practical implementation of photonics on chip, monolithically with CMOS type microelectronic devices, remains in the laboratory. This work presents architectures to integrate photonics and microelectronics that address CMOS fabrication realities, increase performance of both the electronic and optical functions, and retain current levels of reliability. Fabricating these structures with the limited CMOS material set and/or typical photonic materials requires materials to be molecularly engineered to provide required properties. Materials have been investigated that enable economic fabrication of photonic structures for monolithic integration. Low loss self assembled silicon nanocomposite VIPIR waveguide structures are combined with long term stable non-linear poled polymers for fabrication of electro-optic active devices. Materials are fabricated using low temperature plasma enhanced chemical vapor deposition (PECVD).

  18. Optoelectronic Apparatus Measures Glucose Noninvasively

    NASA Technical Reports Server (NTRS)

    Ansari, Rafat R.; Rovati, Luigi L.

    2003-01-01

    An optoelectronic apparatus has been invented as a noninvasive means of measuring the concentration of glucose in the human body. The apparatus performs polarimetric and interferometric measurements of the human eye to acquire data from which the concentration of glucose in the aqueous humor can be computed. Because of the importance of the concentration of glucose in human health, there could be a large potential market for instruments based on this apparatus.

  19. Optoelectronic assistance for the disabled

    NASA Astrophysics Data System (ADS)

    Minor, Arturo; Almazan, Salvador; Suaste, Ernesto

    1994-06-01

    We show an optoelectronic implementation assistant that will be used by handicapped people. The system works with the head gesture movements of the user. These movements are vectorized with an IR spotlight that is detected by four optocoupled detectors. The information is interpreted and sent to the PC by the serial port. This implementation could be used as a powerful tool between man-machine interaction.

  20. Process for strengthening silicon based ceramics

    DOEpatents

    Kim, Hyoun-Ee; Moorhead, A. J.

    1993-04-06

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  1. Process for strengthening silicon based ceramics

    DOEpatents

    Kim, Hyoun-Ee; Moorhead, A. J.

    1993-01-01

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  2. Process for strengthening silicon based ceramics

    SciTech Connect

    Kim, Hyoun-Ee; Moorhead, A.J.

    1991-03-07

    A process for strengthening silicon based ceramic monolithic materials and composite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400{degrees}C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts, or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  3. Nanofabrication of Hybrid Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Dibos, Alan Michael

    The material requirements for optoelectronic devices can vary dramatically depending on the application. Often disparate material systems need to be combined to allow for full device functionality. At the nanometer scale, this can often be challenging because of the inherent chemical and structural incompatibilities of nanofabrication. This dissertation concerns the integration of seemingly dissimilar materials into hybrid optoelectronic devices for photovoltaic, plasmonic, and photonic applications. First, we show that combining a single strip of conjugated polymer and inorganic nanowire can yield a nanoscale solar cell, and modeling of optical absorption and exciton diffusion in this device can provide insight into the efficiency of charge separation. Second, we use an on-chip nanowire light emitting diode to pump a colloidal quantum dot coupled to a silver waveguide. The resulting device is an electro-optic single plasmon source. Finally, we transfer diamond waveguides onto near-field avalanche photodiodes fabricated from GaAs. Embedded in the diamond waveguides are nitrogen vacancy color centers, and the mapping of emission from these single-photon sources is demonstrated using our on-chip detectors, eliminating the need for external photodetectors on an optical table. These studies show the promise of hybrid optoelectronic devices at the nanoscale with applications in alternative energy, optical communication, and quantum optics.

  4. Nanosized optoelectronic devices based on photoactivated proteins.

    PubMed

    Dimonte, Alice; Frache, Stefano; Erokhin, Victor; Piccinini, Gianluca; Demarchi, Danilo; Milano, Francesco; Micheli, Giovanni De; Carrara, Sandro

    2012-11-12

    Molecular nanoelectronics is attracting much attention, because of the possibility to add functionalities to silicon-based electronics by means of intrinsically nanoscale biological or organic materials. The contact point between active molecules and electrodes must present, besides nanoscale size, a very low resistance. To realize Metal-Molecule-Metal junctions it is, thus, mandatory to be able to control the formation of useful nanometric contacts. The distance between the electrodes has to be of the same size of the molecule being put in between. Nanogaps technology is a perfect fit to fulfill this requirement. In this work, nanogaps between gold electrodes have been used to develop optoelectronic devices based on photoactive proteins. Reaction Centers (RC) and Bacteriorhodopsin (BR) have been inserted in nanogaps by drop casting. Electrical characterizations of the obtained structures were performed. It has been demonstrated that these nanodevices working principle is based on charge separation and photovoltage response. The former is induced by the application of a proper voltage on the RC, while the latter comes from the activation of BR by light of appropriate wavelengths.

  5. GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

    NASA Astrophysics Data System (ADS)

    Molière, T.; Jaffré, A.; Alvarez, J.; Mencaraglia, D.; Connolly, J. P.; Vincent, L.; Hallais, G.; Mangelinck, D.; Descoins, M.; Bouchier, D.; Renard, C.

    2017-01-01

    The monolithic integration of III-V semiconductors on silicon and particularly of GaAs has aroused great interest since the 1980s. Potential applications are legion, ranging from photovoltaics to high mobility channel transistors. By using a novel integration method, we have shown that it is possible to achieve heteroepitaxial integration of GaAs crystals (typical size 1 μ m) on silicon without any structural defect such as antiphase domains, dislocations, or stress, usually reported for direct GaAs heteroepitaxy on silicon. However, concerning their electronic properties, conventional free carrier characterization methods are impractical due to the micrometric size of GaAs crystals. In order to evaluate the GaAs material quality for optoelectronic applications, a series of indirect analyses such as atom probe tomography, Raman spectroscopy, and micro-photoluminescence as a function of temperature were performed. These revealed a high content of partially electrically active carbon originating from the trimethylgallium used as the Ga precursor. Nevertheless, the very good homogeneity observed by this doping mechanism and the attractive properties of carbon as a dopant once controlled to a sufficient degree are a promising route to device doping.

  6. Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

    NASA Technical Reports Server (NTRS)

    Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. B.

    1990-01-01

    Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

  7. Monolithic afocal telescope

    NASA Technical Reports Server (NTRS)

    Roberts, William T. (Inventor)

    2010-01-01

    An afocal monolithic optical element formed of a shallow cylinder of optical material (glass, polymer, etc.) with fast aspheric surfaces, nominally confocal paraboloids, configured on the front and back surfaces. The front surface is substantially planar, and this lends itself to deposition of multi-layer stacks of thin dielectric and metal films to create a filter for rejecting out-of-band light. However, an aspheric section (for example, a paraboloid) can either be ground into a small area of this surface (for a Cassegrain-type telescope) or attached to the planar surface (for a Gregorian-type telescope). This aspheric section of the surface is then silvered to create the telescope's secondary mirror. The rear surface of the cylinder is figured into a steep, convex asphere (again, a paraboloid in the examples), and also made reflective to form the telescope's primary mirror. A small section of the rear surface (approximately the size of the secondary obscuration, depending on the required field of the telescope) is ground flat to provide an unpowered surface through which the collimated light beam can exit the optical element. This portion of the rear surface is made to transmit the light concentrated by the reflective surfaces, and can support the deposition of a spectral filter.

  8. Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

    PubMed

    Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

    2017-02-01

    Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed.

  9. Laser applications in the electronics and optoelectronics industry in Japan

    NASA Astrophysics Data System (ADS)

    Washio, Kunihiko

    1999-07-01

    This paper explains current status and technological trends in laser materials processing applications in electronics and optoelectronics industry in Japan. Various laser equipment based on solid state lasers or gas lasers such as excimer lasers or CO2 lasers has been developed and applied in manufacturing electronic and optoelectronic devices to meet the strong demands for advanced device manufacturing technologies for high-performance, lightweight, low power-consumption portable digital electronic appliances, cellular mobile phones, personal computers, etc. Representative applications of solid-state lasers are, opaque and clear defects repairing of photomasks for LSIs and LCDs, trimming of thick-film chip resistors and low resistance metal resistors, laser cutting and drilling of thin films for high-pin count semiconductor CSP packages, laser patterning of thin-film amorphous silicon solar cells, and laser welding of electronic components such as hard-disk head suspensions, optical modules, miniature relays and lithium ion batteries. Compact and highly efficient diode- pumped and Q-switched solid-state lasers in second or third harmonic operation mode are now being increasingly incorporated in various laser equipment for fine material processing. Representative applications of excimer lasers are, sub-quarter micron design-rule LSI lithography and low- temperature annealing of poly-silicon TFT LCD.

  10. Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup1

    PubMed Central

    Ping Wang, Yan; Letoublon, Antoine; Nguyen Thanh, Tra; Bahri, Mounib; Largeau, Ludovic; Patriarche, Gilles; Cornet, Charles; Bertru, Nicolas; Le Corre, Alain; Durand, Olivier

    2015-01-01

    This study is carried out in the context of III–V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown on Si. GaP has been chosen as the interfacial layer, owing to its low lattice mismatch with Si. But, microtwins and antiphase boundaries are still difficult to avoid in this system. Absolute quantification of the microtwin volume fraction is used for optimization of the growth procedure in order to eliminate these defects. Lateral correlation lengths associated with mean antiphase boundary distances are then evaluated. Finally, optimized growth conditions lead to the annihilation of antiphase domains within the first 10 nm. PMID:26089763

  11. Light emission from porous silicon

    NASA Astrophysics Data System (ADS)

    Penczek, John

    The continuous evolution of silicon microelectronics has produced significant gains in electronic information processing. However, greater improvements in performance are expected by utilizing optoelectronic techniques. But these techniques have been severely limited in silicon- based optoelectronics due to the lack of an efficient silicon light emitter. The recent observation of efficient light emission from porous silicon offer a promising opportunity to develop a suitable silicon light source that is compatible with silicon microelectronics. This dissertation examined the porous silicon emission mechanism via photoluminescence, and by a novel device structure for porous silicon emitters. The investigation first examined the correlation between porous silicon formation conditions (and subsequent morphology) with the resulting photoluminescence properties. The quantum confinement theory for porous silicon light emission contends that the morphology changes induced by the different formation conditions determine the optical properties of porous silicon. The photoluminescence spectral shifts measured in this study, in conjunction with TEM analysis and published morphological data, lend support to this theory. However, the photoluminescence spectral broadening was attributed to electronic wavefunction coupling between adjacent silicon nanocrystals. An novel device structure was also investigated in an effort to improve current injection into the porous silicon layer. The selective etching properties of porous silicon were used to create a p-i-n structure with crystalline silicon contacts to the porous silicon layer. The resulting device was found to have unique characteristics, with a negative differential resistance region and current-induced emission that spanned from 400 nm to 5500 nm. The negative differential resistance was correlated to resistive heating effects in the device. A numerical analysis of thermal emission spectra from silicon films, in addition to

  12. Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

    NASA Astrophysics Data System (ADS)

    Liang, Yu Teng

    coatings have been demonstrated. In particular, co-deposited platinum, silicon, and carbon nanomaterial films were fashioned into electronic hydrogen gas sensors, cost efficient dye sensitized solar cell electrodes, and high capacity lithium ion battery anodes. Furthermore, concentrated graphene inks were coated to form aligned graphene-polymer nanocomposites and outstanding carbon nanotube-graphene hybrid semitransparent electrical conductors. Nanocomposite graphene-titanium dioxide catalysts produced from these cellulosic inks have low covalent defect densities and were shown to be approximately two and seven times more active than those based on reduced graphene oxide in photo-oxidation and photo-reduction reactions, respectively. Using a broad range of material characterization techniques, mechanistic insight was obtained using composite photocatalysts fabricated from well defined nanomaterials. For instance, optical spectroscopy and electronic measurements revealed a direct correlation between graphene charge transport performance and composite photochemical activity. Moreover, investigations into multidimensional composites based on 1D carbon nanotubes, 2D graphene, and 2D titanium dioxide nanosheets generated additional mechanistic insight for extending photocatalytic spectral response and increasing reaction specificity. Together, these results demonstrate the versatility of vacuum co-deposition and cellulosic nanomaterial inks for fabricating carbon nanocomposite optoelectronic and energy conversion coatings.

  13. Integrated Optoelectronics for Parallel Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Stirbl, Robert; Moynihan, Philip; Bearman, Gregory; Lane, Arthur

    2003-01-01

    Miniature, relatively inexpensive microbioanalytical systems ("laboratory-on-achip" devices) have been proposed for the detection of hazardous microbes and toxic chemicals. Each system of this type would include optoelectronic sensors and sensor-output-processing circuitry that would simultaneously look for the optical change, fluorescence, delayed fluorescence, or phosphorescence signatures from multiple redundant sites that have interacted with the test biomolecules in order to detect which one(s) was present in a given situation. These systems could be used in a variety of settings that could include doctors offices, hospitals, hazardous-material laboratories, biological-research laboratories, military operations, and chemical-processing plants.

  14. Optoelectronic tweezers for medical diagnostics

    NASA Astrophysics Data System (ADS)

    Kremer, Clemens; Neale, Steven; Menachery, Anoop; Barrett, Mike; Cooper, Jonathan M.

    2012-01-01

    Optoelectronic tweezers (OET) allows the spatial patterning of electric fields through selected illumination of a photoconductive surface. This enables the manipulation of micro particles and cells by creating non-uniform electrical fields that then produce dielectrophoretic (DEP) forces. The DEP responses of cells differ and can produce negative or positive (repelled or attracted to areas of high electric field) forces. Therefore OET can be used to manipulate individual cells and separate different cell types from each other. Thus OET has many applications for medical diagnostics, demonstrated here with work towards diagnosing Human African Trypanosomiasis, also known as sleeping sickness.

  15. Silicon-based silicon-germanium-tin heterostructure photonics.

    PubMed

    Soref, Richard

    2014-03-28

    The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.

  16. Optoelectronics with 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Mueller, Thomas

    2015-03-01

    Two-dimensional (2D) atomic crystals, such as graphene and layered transition-metal dichalcogenides, are currently receiving a lot of attention for applications in electronics and optoelectronics. In this talk, I will review our research activities on electrically driven light emission, photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, WSe2 monolayer p-n junctions formed by electrostatic doping using a pair of split gate electrodes, type-II heterojunctions based on MoS2/WSe2 and MoS2/phosphorene van der Waals stacks, 2D multi-junction solar cells, and 3D/2D semiconductor interfaces will be presented. Upon optical illumination, conversion of light into electrical energy occurs in these devices. If an electrical current is driven, efficient electroluminescence is obtained. I will present measurements of the electrical characteristics, the optical properties, and the gate voltage dependence of the device response. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. A model will be presented that reproduces our experimental findings, such as the dependence on optical power and gate voltage. We envision that the efficient photon conversion and light emission, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.

  17. Method of monolithic module assembly

    DOEpatents

    Gee, James M.; Garrett, Stephen E.; Morgan, William P.; Worobey, Walter

    1999-01-01

    Methods for "monolithic module assembly" which translate many of the advantages of monolithic module construction of thin-film PV modules to wafered c-Si PV modules. Methods employ using back-contact solar cells positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The methods of the invention allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  18. Monolithical aspherical beam expanding systems

    NASA Astrophysics Data System (ADS)

    Fuchs, U.; Matthias, Sabrina

    2014-10-01

    Beam expanding is a common task, where Galileo telescopes are preferred. However researches and customers have found limitations when using these systems. A new monolithical solution which is based on the usage of only one aspherical component will be presented. It will be shown how to combine up to five monolithical beam expanding systems and to keep the beam quality at diffraction limitation. Insights will be given how aspherical beam expanding systems will help using larger incoming beams and reducing the overall length of such a system. Additionally an add-on element for divergence and wavelength adaption will be presented.

  19. Mode beating and heterodyning of monolithically integrated semiconductor ring lasers

    NASA Astrophysics Data System (ADS)

    Liu, Chiyu

    Monolithically integrated semiconductor ring lasers (SRLs) are attractive optical sources for optoelectronic integrated circuits (OEICs) because they do not require any feedback elements, do not have parts exposed to external ambient, and can operate in a traveling-wave mode. They are promising candidates for wavelength filtering, unidirectional traveling-wave operation, and multiplexing/demultiplexing applications. Ring lasers can also be used as ultrashort pulse generators using various mode-locking schemes and as active gyro components. However, the SRL is a very complicated dynamic system, which requires more investigations to understand the performance regarding details of the design and fabrication. As a part of NASA-supported project "Monolithically Integrated Semiconductor Ring Laser Gyro for Space Applications", this dissertation research was focused on design and characterization of a novel monolithically integrated rotation sensor based on two large-size independent SRLs. Numerical modeling based on the beam propagation method (BPM) was used to design the fabrication parameters for the single-mode ridge-waveguide ring cavity and directional coupler waveguides. The mode internal coupling in single lateral-mode laser diodes with InGaAs/GaAs material system was investigated by optical experiments and numerical modeling. To gain the understanding of the SRL performance, optical and electrical characterization was performed on fabricated SRLs. Particular emphasis was placed on the study of optical and radio frequency (RF) beating spectra of longitudinal modes of ring lasers. RF measurements provide high accuracy in the diagnosis of laser oscillation parameters by purely electronic means, particularly in the measurement of the group index and its dependence on current and temperature. Theoretical analysis based on the effective index method provides good agreement between the experimental data and numerical calculations. Finally, optical heterodyning spectra

  20. Designed self-organization for molecular optoelectronics

    NASA Astrophysics Data System (ADS)

    Norton, Michael; Neff, David; Towler, Ian; Day, Scott; Grambos, Zachary; Shremshock, Mikala; Butts, Heather; Meadows, Christiaan; Samiso, Yuko; Cao, Huan; Rahman, Mashiur

    2006-05-01

    The convergence of terahertz spectroscopy and single molecule experimentation offer significant promise of enhancement in sensitivity and selectivity in molecular recognition, identification and quantitation germane to military and security applications. This presentation reports the results of experiments which address fundamental barriers to the integration of large, patterned bio-compatible molecular opto-electronic systems with silicon based microelectronic systems. The central thrust of this approach is sequential epitaxy on surface bound single stranded DNA one-dimensional substrates. The challenge of producing highly structured macromolecular substrates, which are necessary in order to implement molecular nanolithography, has been addressed by combining "designer" synthetic DNA with biosynthetically derived plasmid components. By design, these one dimensional templates are composed of domains which contain sites which are recognized, and therefore addressable by either complementary DNA sequences and/or selected enzymes. Such design is necessary in order to access the nominal 2 nm linewidth potential resolution of nanolithography on these one-dimensional substrates. The recognition and binding properties of DNA ensure that the lithographic process is intrinsically self-organizing, and therefore self-aligning, a necessity for assembly processes at the requisite resolution. Another requirement of this molecular epitaxy approach is that the substrate must be immobilized. The challenge of robust surface immobilization is being addressed via the production of the equivalent of molecular tube sockets. In this application, multi-valent core-shell fluorescent quantum dots provide a mechanism to prepare surface attachment sites with a pre-determined 1:1 attachment site : substrate (DNA) molecule ratio.

  1. Monolithic CMOS imaging x-ray spectrometers

    NASA Astrophysics Data System (ADS)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  2. Monolithic and hybrid near infrared detection and imaging based on poly-Ge photodiode arrays

    NASA Astrophysics Data System (ADS)

    Masini, G.; Colace, L.; Petulla, F.; Assanto, G.; Cencelli, V.; DeNotaristefani, F.

    2005-02-01

    In recent years, several Ge-on-Si technologies for the fabrication of near infrared photodetectors on Si substrates were proposed. In particular, using a low temperature (300 °C) technique, we have demonstrated poly-Ge_on_Si detectors with high speed and good NIR responsivity. The low process temperature allows the monolithic integration of the detectors as a final step in the fabrication of Si CMOS integrated circuits. After an introduction on poly-Ge, we describe a novel integrated chip (NIRCAM-1) designed as a readout/control circuit for arrays of 64 (32) poly-Ge_on_Si photodetectors. The photodiodes, monolithically integrated (wire-bonded with a hybrid approach) on the IC, generate a photocurrent which is then ADC converted after subtraction of the dark component, thus allowing a convenient digital readout of the array. The extensive optoelectronic characterization of the IC is presented.

  3. Monolithic blue upconversion fiber laser

    NASA Astrophysics Data System (ADS)

    Gaebler, Volker; Eichler, Hans J.

    2002-06-01

    We report a monolithic low threshold 482nm Tm:ZBLAN upconversion fiber laser. The laser cavity consists of a directly coated single-mode fluoride fiber. The vapor deposit coatings significantly reduce the coupling losses and are suitable to be pumped by laser diodes. The laser operation and threshold characteristics have been investigated. The output stability and beam quality was tested.

  4. Monolithic fiber optic sensor assembly

    SciTech Connect

    Sanders, Scott

    2015-02-10

    A remote sensor element for spectrographic measurements employs a monolithic assembly of one or two fiber optics to two optical elements separated by a supporting structure to allow the flow of gases or particulates therebetween. In a preferred embodiment, the sensor element components are fused ceramic to resist high temperatures and failure from large temperature changes.

  5. Porous silicon carbide (SIC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  6. High-performance p-i-n/HBT monolithic photoreceivers for lightwave communications

    NASA Astrophysics Data System (ADS)

    Chandrasekhar, Chandra S.; Lunardi, Leda M.

    1995-12-01

    Long wavelength optoelectronic integrated circuits (OEICs) have made impressive progress in the last decade and their performance has become attractive enough to be considered as part of lightwave communication systems. This paper reviews these aspects of OEICs, with emphasis on monolithic photoreceivers which incorporate heterojunction bipolar transistors for the electronic functions. We review single channel p-i-n/HBT photoreceivers with speeds up to 12 Gb/s and multi-channel array-type receivers suitable for WDM applications with an aggregate throughput of 20 Gb/s.

  7. Optoelectronic Particle-Fallout Sensor

    NASA Technical Reports Server (NTRS)

    Ihlefeld, Curtis; Mogan, Paul A.; Youngquist, Robert C.; Moerk, John S.; Haskell, William D.; Cox, Robert B.; Rose, Kenneth A.

    1995-01-01

    Portable optoelectronic system monitors fallout of small particles (dust and fibers) onto surface at given location during extended time. Data on accumulated fallout downloaded from system to computer for display and analysis. Typical display is plot of signal proportional to amount of accumulated fallout as function of time and read to determine when contamination occurs. In many cases, possible to establish correlations between accumulations of particles and activities in vicinity. Also capable of signaling alarm in event contamination by fallout exceeds specified level. System made very inexpensively and used to monitor accumulation of dust and fibers associated with motion of air in variety of environments. Phenomena monitored indirectly by use of system might include circulation of air in buildings, and human and animal activity. Also serves as auxiliary intrusion monitor (though probably not real-time alarm) in sealed room because motion of intruder inevitably stirs up some dust.

  8. Protective Skins for Aerogel Monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas; Johnston, James C.; Kuczmarski, Maria A.; Meador, Ann B.

    2007-01-01

    A method of imparting relatively hard protective outer skins to aerogel monoliths has been developed. Even more than aerogel beads, aerogel monoliths are attractive as thermal-insulation materials, but the commercial utilization of aerogel monoliths in thermal-insulation panels has been inhibited by their fragility and the consequent difficulty of handling them. Therefore, there is a need to afford sufficient protection to aerogel monoliths to facilitate handling, without compromising the attractive bulk properties (low density, high porosity, low thermal conductivity, high surface area, and low permittivity) of aerogel materials. The present method was devised to satisfy this need. The essence of the present method is to coat an aerogel monolith with an outer polymeric skin, by painting or spraying. Apparently, the reason spraying and painting were not attempted until now is that it is well known in the aerogel industry that aerogels collapse in contact with liquids. In the present method, one prevents such collapse through the proper choice of coating liquid and process conditions: In particular, one uses a viscous polymer precursor liquid and (a) carefully controls the amount of liquid applied and/or (b) causes the liquid to become cured to the desired hard polymeric layer rapidly enough that there is not sufficient time for the liquid to percolate into the aerogel bulk. The method has been demonstrated by use of isocyanates, which, upon exposure to atmospheric moisture, become cured to polyurethane/polyurea-type coats. The method has also been demonstrated by use of commercial epoxy resins. The method could also be implemented by use of a variety of other resins, including polyimide precursors (for forming high-temperature-resistant protective skins) or perfluorinated monomers (for forming coats that impart hydrophobicity and some increase in strength).

  9. Porous silicon bulk acoustic wave resonator with integrated transducer

    PubMed Central

    2012-01-01

    We report that porous silicon acoustic Bragg reflectors and AlN-based transducers can be successfully combined and processed in a commercial solidly mounted resonator production line. The resulting device takes advantage of the unique acoustic properties of porous silicon in order to form a monolithically integrated bulk acoustic wave resonator. PMID:22776697

  10. Detecting Low-Power RF Signals Using a Multimode Optoelectronic Oscillator and Integrated Optical Filter

    DTIC Science & Technology

    2010-02-01

    from IEEE Xplore . Restrictions apply. 154 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 22, NO. 3, FEBRUARY 1, 2010 Fig. 4. Measured silicon FPF response...air Bragg mirrors,” Opt. Lett., vol. 32, no. 5, pp. 533–535, 2007. Authorized licensed use limited to: NRL. Downloaded on January 13, 2010 at 07:41 from IEEE Xplore . Restrictions apply. ...152 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 22, NO. 3, FEBRUARY 1, 2010 Detecting Low-Power RF Signals Using a Multimode Optoelectronic Oscillator

  11. Monolithic active pixel radiation detector with shielding techniques

    DOEpatents

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  12. Nanoklystron: A Monolithic Tube Approach to THz Power Generation

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Fung, Andy; Manohara, Harish; Xu, Jimmy; Chang, Baohe

    2001-01-01

    The authors propose a new approach to THz power generation: the nanoklystron. Utilizing silicon micromachining techniques, the design and fabrication concept of a monolithic THz vacuum-tube reflex-klystron source is described. The nanoklystron employs a separately fabricated cathode structure composed of densely packed carbon nanotube field emitters and an add-in repeller. The nanotube cathode is expected to increase the current density, extend the cathode life and decrease the required oscillation voltage to values below 100 V. The excitation cavity is based on ridged-waveguide and differs from the conventional cylindrical re-entrant structures found in lower frequency klystrons. A quasi-static field analysis of the cavity and output coupling structure show excellent control of the quality factor and desired field distribution. Output power is expected to occur through an iris coupled matched rectangular waveguide and integrated pyramidal feed horn. The entire circuit is designed so as to be formed monolithically from two thermocompression bonded silicon wafers processed using deep reactive ion etching (DRIE) techniques. To expedite prototyping, a 600 GHz mechanically machined structure has been designed and is in fabrication. A complete numeric analysis of the nanoklystron circuit, including the electron beam dynamics has just gotten underway. Separate evaluation of the nanotube cathodes is also ongoing. The authors will describe the progress to date as well as plans for the immediate implementation and testing of nanoklystron prototypes at 640 and 1250 GHz.

  13. Towards Silicon-Based Longwave Integrated Optoelectronics (LIO)

    DTIC Science & Technology

    2008-01-21

    communication- cryptography-metrology-computing; photonic testing of electronic ICs; bionic signal processors; neural network processors; data-fusion...Sensing longwave images with the human eye using a longwave-to-visible image converter “cube”, (7) Generating infrared “scenes” in miniature with a LIO

  14. Optoelectronic Device Integration in Silicon (OpSIS)

    DTIC Science & Technology

    2015-10-26

    the community as part of the OpSIS-IME MPW service. © (2013) COPYRIGHT Society of Photo -Optical Instrumentation Engineers (SPIE). Downloading of the...germanium direct contact” Vol.22, No.9; 11367-11375 (2013). (9 Google Scholar Citations) Abstract: We report a Ge-on-Si photodetector without doped Ge or...versus optical signal-to-noise ratio. 27 Fig. 1 WDM ring transmitter. (a) Architecture diagram. (b) Chip photo . 28. Ding, Ran; Liu, Yang; Li, Qi

  15. Opto-Electronic Oscillator and its Applications

    NASA Technical Reports Server (NTRS)

    Yao, X. S.; Maleki, L.

    1996-01-01

    We present the theoretical and experimental results of a new class of microwave oscillators called opto-electronic oscillators (OEO). We discuss techniques of achieving high stability single mode operation and demonstrate the applications of OEO in photonic communication systems.

  16. Light Weight Silicon Mirrors for Space Instrumentation

    NASA Technical Reports Server (NTRS)

    Bly, Vincent T.; Hill, Peter C.; Hagopian, John G.; Strojay, Carl R.; Miller, Timothy

    2012-01-01

    Each mirror is a monolithic structure from a single crystal of silicon. The mirrors are light weighted after the optical surface is ground and polished. Mirrors made during the initial phase of this work were typically 1/50 lambda or better (RMS at 633 n m)

  17. Monolithic pattern-sensitive detector

    DOEpatents

    Berger, Kurt W.

    2000-01-01

    Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

  18. Monolithic Fuel Fabrication Process Development

    SciTech Connect

    C. R. Clark; N. P. Hallinan; J. F. Jue; D. D. Keiser; J. M. Wight

    2006-05-01

    The pursuit of a high uranium density research reactor fuel plate has led to monolithic fuel, which possesses the greatest possible uranium density in the fuel region. Process developments in fabrication development include friction stir welding tool geometry and cooling improvements and a reduction in the length of time required to complete the transient liquid phase bonding process. Annealing effects on the microstructures of the U-10Mo foil and friction stir welded aluminum 6061 cladding are also examined.

  19. Efficient, High-Speed, Monolithic Optoelectronic Circuits Using Quantum- Confined Structures

    DTIC Science & Technology

    1991-07-25

    made to optimize the ridge-waveguide laser fabrication process by working on GaAs and In0.2Ga0.sAs single quantum- laser monitoring and polyimidc...with and without a SSL active layer. Because the SSL laser samples are precious, a special effort has been made to optimize the ridge-waveguide laser ... fabrication process by working on GaAs and Ino.2Ga0.sAs single quantum- 20 well SCH structures. It is found that the choice among SiQz, SixNy and

  20. Transparent heat-spreader for optoelectronic applications

    DOEpatents

    Minano, Juan Carlos; Benitez, Pablo

    2014-11-04

    An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

  1. Radiation effects in optoelectronic devices. [Review

    SciTech Connect

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given.

  2. Metamaterial mirrors in optoelectronic devices.

    PubMed

    Esfandyarpour, Majid; Garnett, Erik C; Cui, Yi; McGehee, Michael D; Brongersma, Mark L

    2014-07-01

    The phase reversal that occurs when light is reflected from a metallic mirror produces a standing wave with reduced intensity near the reflective surface. This effect is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical mirrors, because it dictates a minimum spacing between the metal and the underlying active semiconductor layers, therefore posing a fundamental limit to the overall thickness of the device. Here, we show that this challenge can be circumvented by using a metamaterial mirror whose reflection phase is tunable from that of a perfect electric mirror (φ = π) to that of a perfect magnetic mirror (φ = 0). This tunability in reflection phase can also be exploited to optimize the standing wave profile in planar devices to maximize light-matter interaction. Specifically, we show that light absorption and photocurrent generation in a sub-100 nm active semiconductor layer of a model solar cell can be enhanced by ∼20% over a broad spectral band.

  3. Graphene-supported metal oxide monolith

    DOEpatents

    Worsley, Marcus A.; Baumann, Theodore F.; Biener, Juergen; Biener, Monika A.; Wang, Yinmin; Ye, Jianchao; Tylski, Elijah

    2017-01-10

    A composition comprising at least one graphene-supported metal oxide monolith, said monolith comprising a three-dimensional structure of graphene sheets crosslinked by covalent carbon bonds, wherein the graphene sheets are coated by at least one metal oxide such as iron oxide or titanium oxide. Also provided is an electrode comprising the aforementioned graphene-supported metal oxide monolith, wherein the electrode can be substantially free of any carbon-black and substantially free of any binder.

  4. New 'monolithic' templates and improved protocols for soft lithography and microchip fabrication

    NASA Astrophysics Data System (ADS)

    Pallandre, Antoine; Pal, Debjani; de Lambert, Bertrand; Viovy, Jean-Louis; Fütterer, Claus

    2006-05-01

    We report a new method for fast prototyping and fabrication of polydimethylsiloxane (PDMS) and plastic microfluidic chips. These methods share in common the preparation of monolithic masters which includes the fabrication of the planar support, the 'negative pattern' of the microchannels and the fluidic connectors. The monolithic templates are extremely robust compared to conventional ones made of silicon and SU-8, and easier to produce and cheaper than all-silicon or electroplated templates. In contrast to the above-mentioned methods, our process allows one to cast both micrometre- (e.g. the microchannel) and millimetre-sized structures (e.g. the fluidic connection to the outer world) in a single fabrication step. The 'monolithic template' strategy can be used to fabricate both elastomeric (e.g. poly(dimethyl siloxane (PDMS)) polyester thermoset masters and glassy polymeric (e.g. cyclic olefin copolymer (COC)) devices. In this study we also report on one step fabrication of elastomer chips and on surface modifications of the above mentioned monolithically fabricated masters in order to improve separation of the chip from the template.

  5. High pressure-resistant SU-8 microchannels for monolithic porous structure integration

    NASA Astrophysics Data System (ADS)

    Carlier, Julien; Chuda, Katarzyna; Arscott, Steve; Thomy, Vincent; Verbeke, Bernard; Coqueret, Xavier; Camart, Jean Christophe; Druon, Christian; Tabourier, Pierre

    2006-10-01

    Integrated lab-on-chip (LOC) microsystems dedicated to proteomic analysis require specific pretreatment steps such as protein trypsic digestion, concentration, desalting or separation of biological samples. These steps can be achieved thanks to porous monolithic polymers. This paper deals with the integration of such a polymer into SU-8 microchannels by using a multi-material technology (SU-8, Pyrex and silicon). A solution for the fabrication of complete polymer microchannels which are high pressure- and solvents-resistant is proposed. This technique uses the negative photoresist SU-8 which is compatible with the protein analysis performed here. Our process requires a novel technological step using a silane coupling agent. This modification of the SU-8/Pyrex interface leads to the fabrication of a 100 µm × 160 µm section microchannel (length of 3 cm), closed with a Pyrex® lid by SU-8 bonding resistant to 80 bar. An improvement of the SU-8/monolithic structure is also demonstrated thanks to a specific treatment of the polymer enabling good anchoring of the monolith in the microchannels, and the pressure-resistance tests were also achieved with the monolithic structure integrated in the microchannels. A digestion step of a protein sample of benzoylarginine ethyl ester in a SU-8 microchannel was achieved after the functionalization of a monolith anchored in the microchannel. Analysis by UV/VIS spectroscopy of this in situ digestion has been reported.

  6. Stacked Metal Silicide/Silicon Far-Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph

    1988-01-01

    Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

  7. Polymer-embedded colloidal lead-sulfide nanocrystals integrated to vertically slotted silicon-based ring resonators for telecom applications

    NASA Astrophysics Data System (ADS)

    Humer, Markus; Guider, Romain; Hackl, Florian; Fromherz, Thomas

    2013-01-01

    The main drawback of the rapidly evolving field of silicon photonics lies in the absence of efficient monolithically integrated radiation sources as a consequence of the indirect bandgap of Si and Ge. Relevant alternatives based on the hybrid combination of Si with optically active materials have to be technologically simple, temporally stable, and provide efficient coupling to the Si waveguides. Lead-sulfide nanocrystals (NCs) were blended into a polymer resist suitable for deep-UV- and electron-beam lithography and integrated into Si-based vertically slotted waveguides and ring resonators. The polymer both stabilizes the NC's photoluminescence emission against degradation under ambient conditions and allows lithographic patterning of this compound material. After integration into the optoelectronic structures and upon optical pumping, intense photoluminescence emission from ring resonators was recorded at the output of bus-waveguides. The resonator quality factors were investigated for polymer-NC compounds with NC concentrations in the range between 0.1 and 8 vol%. The spontaneous emission rate enhancement for vertically slotted resonators was estimated to be a factor of two higher as compared to unslotted ones. The stable integration of colloidal NCs as well as the improved light coupling to silicon circuits is an important step in the development of silicon-based hybrid photonics.

  8. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    SciTech Connect

    Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

    2015-03-24

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

  9. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    DOE PAGES

    Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; ...

    2015-03-24

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

  10. Polymer light harvesting composites for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sun, Sam-Shajing; Wang, Dan

    2015-09-01

    Polymer based optoelectronic composites and thin film devices exhibit great potential in space applications due to their lightweight, flexible shape, high photon absorption coefficients, and robust radiation tolerance in space environment. Polymer/dye composites appear promising for optoelectronics applications due to potential enhancements in both light harvesting and charge separation. In this study, the optoelectronic properties of a series of molecular dyes paired with a conjugated polymer Poly(3-hexylthiophene-2,5-diyl) (P3HT) were investigated. Specifically, the solution PL quenching coefficients (Ksv) of dye/polymer follows a descending order from dyes of Chloro(protoporphyrinato)iron(III) (Hemin), Protoporphyrin, to meso-Tetra(4-carboxyphenyl)porphine (TCPP). In optoelectronic devices made of the P3HT/dye/PCBM composites, the short circuit current densities Jsc as well as the overall power conversion efficiencies (PCE) also follow a descending order from Hemin, Protoporphyrin, to TCPP, despite Hemin exhibits the intermediate polymer/dye LUMO (lowest unoccupied molecular orbital) offset and lowest absorption coefficient as compared to the other two dyes, i.e., the cell optoelectronic efficiency did not follow the LUMO offsets which are the key driving forces for the photo induced charge separations. This study reveals that too large LUMO offset or electron transfer driving force may result in smaller PL quenching and optoelectronic conversion efficiency, this could be another experimental evidence for the Marcus electron transfer model, particularly for the Marcus `inverted region'. It appears an optimum electron transfer driving force or strong PL quenching appears more critical than absorption coefficient for optoelectronic conversion devices.

  11. Photoluminescent red, green and blue monoliths of new Eu(III), Tb(III) and Y(III) complexes embedded in silica matrix

    NASA Astrophysics Data System (ADS)

    Stan, Corneliu S.; Popa, Marcel; Sutiman, Daniel; Horlescu, Petronela

    2014-07-01

    Large transparent photoluminescent monoliths were prepared by embedding newly synthesized Eu(III), Tb(III) and Y(III) complexes with 2-(1H-1,2,4-Triazol-3-yl)pyridine ligand in silica matrices through a modified sol-gel process. The remarkable luminescent properties of the free complexes were preserved in silica matrix, resulting in red, green and blue monoliths with a shape that may be tailored during the gelation process according to specific applications. Prior to embedment, the complexes prepared at 1/3 metal to ligand ratio were investigated through elemental analysis, thermal analysis, FT-IR, mass and fluorescence spectroscopy while the obtained silica monoliths were supplementary investigated through SEM and fluorescence spectroscopy. The emission peaks are located at 612 nm for the monolithic silica embedded Eu(III) complex, at 542 nm for the monolithic silica embedded Tb(III) complex and at 482 nm respectively for the silica monolith containing the Y(III) complex. Their excellent photoluminescent properties may recommend them as photonic conversion materials in various optoelectronic applications.

  12. Monolithic integration of waveguide structures with surface-micromachined polysilicon actuators

    SciTech Connect

    Smith, J.H.; Carson, R.F.; Sullivan, C.T.; McClellan, G.

    1996-03-01

    The integration of optical components with polysilicon surface micromechanical actuation mechanisms show significant promise for signal switching, fiber alignment, and optical sensing applications. Monolithically integrating the manufacturing process for waveguide structures with the processing of polysilicon actuators allows actuated waveguides to take advantage of the economy of silicon manufacturing. The optical and stress properties of the oxides and nitrides considered for the waveguide design along with design, fabrication, and testing details for the polysilicon actuators are presented.

  13. Monolithically integrated absolute frequency comb laser system

    SciTech Connect

    Wanke, Michael C.

    2016-07-12

    Rather than down-convert optical frequencies, a QCL laser system directly generates a THz frequency comb in a compact monolithically integrated chip that can be locked to an absolute frequency without the need of a frequency-comb synthesizer. The monolithic, absolute frequency comb can provide a THz frequency reference and tool for high-resolution broad band spectroscopy.

  14. Compact monolithic capacitive discharge unit

    DOEpatents

    Roesler, Alexander W.; Vernon, George E.; Hoke, Darren A.; De Marquis, Virginia K.; Harris, Steven M.

    2007-06-26

    A compact monolithic capacitive discharge unit (CDU) is disclosed in which a thyristor switch and a flyback charging circuit are both sandwiched about a ceramic energy storage capacitor. The result is a compact rugged assembly which provides a low-inductance current discharge path. The flyback charging circuit preferably includes a low-temperature co-fired ceramic transformer. The CDU can further include one or more ceramic substrates for enclosing the thyristor switch and for holding various passive components used in the flyback charging circuit. A load such as a detonator can also be attached directly to the CDU.

  15. Nanosecond monolithic CMOS readout cell

    DOEpatents

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  16. Nanomaterials for Electronics and Optoelectronics

    NASA Technical Reports Server (NTRS)

    Koehne, Jessica E.; Meyyappan, M.

    2011-01-01

    Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

  17. High throughput optoelectronic smart pixel systems using diffractive optics

    NASA Astrophysics Data System (ADS)

    Chen, Chih-Hao

    1999-12-01

    Recent developments in digital video, multimedia technology and data networks have greatly increased the demand for high bandwidth communication channels and high throughput data processing. Electronics is particularly suited for switching, amplification and logic functions, while optics is more suitable for interconnections and communications with lower energy and crosstalk. In this research, we present the design, testing, integration and demonstration of several optoelectronic smart pixel devices and system architectures. These systems integrate electronic switching/processing capability with parallel optical interconnections to provide high throughput network communication and pipeline data processing. The Smart Pixel Array Cellular Logic processor (SPARCL) is designed in 0.8 m m CMOS and hybrid integrated with Multiple-Quantum-Well (MQW) devices for pipeline image processing. The Smart Pixel Network Interface (SAPIENT) is designed in 0.6 m m GaAs and monolithically integrated with LEDs to implement a highly parallel optical interconnection network. The Translucent Smart Pixel Array (TRANSPAR) design is implemented in two different versions. The first version, TRANSPAR-MQW, is designed in 0.5 m m CMOS and flip-chip integrated with MQW devices to provide 2-D pipeline processing and translucent networking using the Carrier- Sense-MultipleAccess/Collision-Detection (CSMA/CD) protocol. The other version, TRANSPAR-VM, is designed in 1.2 m m CMOS and discretely integrated with VCSEL-MSM (Vertical-Cavity-Surface- Emitting-Laser and Metal-Semiconductor-Metal detectors) chips and driver/receiver chips on a printed circuit board. The TRANSPAR-VM provides an option of using the token ring network protocol in addition to the embedded functions of TRANSPAR-MQW. These optoelectronic smart pixel systems also require micro-optics devices to provide high resolution, high quality optical interconnections and external source arrays. In this research, we describe an innovative

  18. Perovskite Materials: Solar Cell and Optoelectronic Applications

    SciTech Connect

    Yang, Bin; Geohegan, David B; Xiao, Kai

    2017-01-01

    Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure, and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.

  19. Bio-inspired networks for optoelectronic applications.

    PubMed

    Han, Bing; Huang, Yuanlin; Li, Ruopeng; Peng, Qiang; Luo, Junyi; Pei, Ke; Herczynski, Andrzej; Kempa, Krzysztof; Ren, Zhifeng; Gao, Jinwei

    2014-11-28

    Modern optoelectronics needs development of new materials characterized not only by high optical transparency and electrical conductivity, but also by mechanical strength, and flexibility. Recent advances employ grids of metallic micro- and nanowires, but the overall performance of the resulting material composites remains unsatisfactory. In this work, we propose a new strategy: application of natural scaffoldings perfected by evolution. In this context, we study two bio-inspired networks for two specific optoelectronic applications. The first network, intended for solar cells, light sources and similar devices, has a quasi-fractal structure and is derived directly from a chemically extracted leaf venation system. The second network is intended for touch screens and flexible displays, and is obtained by metalizing a spider's silk web. We demonstrate that each of these networks attain an exceptional optoelectonic and mechanical performance for its intended purpose, providing a promising direction in the development of more efficient optoelectronic devices.

  20. Bio-inspired networks for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Han, Bing; Huang, Yuanlin; Li, Ruopeng; Peng, Qiang; Luo, Junyi; Pei, Ke; Herczynski, Andrzej; Kempa, Krzysztof; Ren, Zhifeng; Gao, Jinwei

    2014-11-01

    Modern optoelectronics needs development of new materials characterized not only by high optical transparency and electrical conductivity, but also by mechanical strength, and flexibility. Recent advances employ grids of metallic micro- and nanowires, but the overall performance of the resulting material composites remains unsatisfactory. In this work, we propose a new strategy: application of natural scaffoldings perfected by evolution. In this context, we study two bio-inspired networks for two specific optoelectronic applications. The first network, intended for solar cells, light sources and similar devices, has a quasi-fractal structure and is derived directly from a chemically extracted leaf venation system. The second network is intended for touch screens and flexible displays, and is obtained by metalizing a spider’s silk web. We demonstrate that each of these networks attain an exceptional optoelectonic and mechanical performance for its intended purpose, providing a promising direction in the development of more efficient optoelectronic devices.

  1. Monolithical aspherical beam expanding systems

    NASA Astrophysics Data System (ADS)

    Fuchs, U.

    2014-02-01

    In complex laser systems, such as those for material processing, and in basically all laboratory applications passive optical components are indispensable. Matching beam diameters is a common task, where Galileo type telescopes are preferred for beam expansion. Nevertheless researches and customers have found various limitations when using these systems. Some of them are the complicated adjustment, very small diameter for the incoming beam (1/e2), fixed and non-modifiable magnifications. Above that, diffraction-limitation is only assured within the optical design and not for the real world setup of the beam expanding system. Therefore, we will discuss limitations of currently used beam expanding systems to some extent. We will then present a new monolithical solution, which is based on the usage of only one aspherical component. It will be shown theoretically how the beam quality can be significantly improved by using aspherical lenses. As it is in the nature of things aspheres are working diffraction limited in the design, it will be shown how to combine up to five monolithical beam expanding systems and to keep the beam quality at diffraction limitation. Data of the culminated wavefront error will be presented. Last but not least insights will be given how beam expanding systems based on aspheres will help to use larger incoming beams and to reduce the overall length of such a system.

  2. Monolithically integrated HgCdTe focal plane arrays

    NASA Astrophysics Data System (ADS)

    Velicu, Silviu; Lee, Tae-Seok; Ashokan, Renganathan; Grein, Christoph H.; Boieriu, Paul; Chen, Y. P.; Dinan, John H.; Lianos, Dimitrios

    2003-12-01

    The cost and performance of hybrid HgCdTe infrared focal plane arrays are constrained by the necessity of fabricating the detector arrays on a CdZnTe substrate. These substrates are expensive, fragile, are available only in small rectangular formats, and are not a good thermal expansion match to the silicon readout integrated circuit. We discuss in this paper an infrared sensor technology based on monolithically integrated infrared focal plane arrays that could replace the conventional hybrid focal plane array technology. We have investigated the critical issues related to the growth of HgCdTe on Si read-out integrated circuits and the fabrication of monolithic focal plane arrays: (1) the design of Si read-out integrated circuits and focal plane array layouts, (2) the low temperature cleaning of Si(001) wafers, (3) growth of CdTe and HgCdTe layers on read-out integrated circuits, (4) array fabrication, interconnection between focal plane array and read-out integrated circuit input nodes and demonstration of the photovoltaic operation, and (5) maintenance of the read-out integrated circuit characteristics after substrate cleaning, molecular beam epitaxy growth and device fabrication. Crystallographic, optical and electrical properties of the grown layers are presented. Electrical properties for diodes fabricated on misoriented Si and read-out integrated circuit substrates are discussed. The fabrication of arrays with demonstrated I-V properties show that monolithic integration of HgCdTe-based infrared focal plane arrays on Si read-out integrated circuits is feasible and could be implemented in the 3rd generation of infrared systems.

  3. A new optoelectronic reversible storage medium (Review)

    NASA Astrophysics Data System (ADS)

    Basov, N. G.; Plotnikov, A. F.; Popov, Iu. M.; Seleznev, V. N.

    1987-03-01

    The characteristics of reversible storage media designed for optical data recording (such as thermomagnetic media used in disk storages) are analyzed. Consideration is given to a new class of optoelectronic media based on MNOS structures. It is shown that the data recording density in these media can reach 100,000 bit/sq mm and that the energy of the light pulse which controls the recording will not exceed 10 to the -12th J. The use of these media broadens the possibilities for optical programming and redundancy. The data exchange rate in the optoelectronic memory can reach 10 to the 11th bit/s.

  4. Opto-electronic oscillators having optical resonators

    NASA Technical Reports Server (NTRS)

    Yao, Xiaotian Steve (Inventor); Maleki, Lutfollah (Inventor); Ilchenko, Vladimir (Inventor)

    2003-01-01

    Systems and techniques of incorporating an optical resonator in an optical part of a feedback loop in opto-electronic oscillators. This optical resonator provides a sufficiently long energy storage time and hence to produce an oscillation of a narrow linewidth and low phase noise. Certain mode matching conditions are required. For example, the mode spacing of the optical resonator is equal to one mode spacing, or a multiplicity of the mode spacing, of an opto-electronic feedback loop that receives a modulated optical signal and to produce an electrical oscillating signal.

  5. Optoelectronic semiconductor device and method of fabrication

    SciTech Connect

    Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

    2014-11-25

    An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

  6. Superacid Passivation of Crystalline Silicon Surfaces.

    PubMed

    Bullock, James; Kiriya, Daisuke; Grant, Nicholas; Azcatl, Angelica; Hettick, Mark; Kho, Teng; Phang, Pheng; Sio, Hang C; Yan, Di; Macdonald, Daniel; Quevedo-Lopez, Manuel A; Wallace, Robert M; Cuevas, Andres; Javey, Ali

    2016-09-14

    The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.

  7. Recent progress in patterned silicon nanowire arrays: fabrication, properties and applications.

    PubMed

    Zhang, Yan; Qiu, Teng; Zhang, Wenjun; Chu, Paul K

    2011-01-01

    Currently there is great interest in patterned silicon nanowire arrays and applications. The accurately controlled fabrication of patterned silicon nanowire arrays with the desirable axial crystallographic orientation using simpler and quicker ways is very desirable and of great importance to material synthesis and future nanoscale optoelectronic devices that employ silicon. The recent advances in manipulating patterned silicon nanowire arrays and patents are reviewed with a focus on the progress of nanowire fabrication and applications.

  8. Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting

    NASA Astrophysics Data System (ADS)

    Cozzan, Clayton; Brady, Michael J.; O'Dea, Nicholas; Levin, Emily E.; Nakamura, Shuji; DenBaars, Steven P.; Seshadri, Ram

    2016-10-01

    With high power light emitting diodes and laser diodes being explored for white light generation and visible light communication, thermally robust encapsulation schemes for color-converting inorganic phosphors are essential. In the current work, the canonical blue-emitting phosphor, high purity Eu-doped BaMgAl10O17, has been prepared using microwave-assisted heating (25 min) and densified into translucent ceramic phosphor monoliths using spark plasma sintering (30 min). The resulting translucent ceramic monoliths convert UV laser light to blue light with the same efficiency as the starting powder and provide superior thermal management in comparison with silicone encapsulation.

  9. Microfluidic devices and methods including porous polymer monoliths

    DOEpatents

    Hatch, Anson V; Sommer, Gregory J; Singh, Anup K; Wang, Ying-Chih; Abhyankar, Vinay V

    2014-04-22

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  10. Microfluidic devices and methods including porous polymer monoliths

    SciTech Connect

    Hatch, Anson V.; Sommer, Gregory j.; Singh, Anup K.; Wang, Ying-Chih; Abhyankar, Vinay

    2015-12-01

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  11. The market of huge monolithic mirror substrates for optical astronomy

    NASA Astrophysics Data System (ADS)

    Döhring, Thorsten

    2013-09-01

    Professional astronomical telescopes are complex optical systems at the limit of technical feasibility. Often monolithic primary mirrors and sometimes even secondary mirrors with huge dimensions are used. Prominent examples are the two reflectors of the Large Binocular Telescope and the giant mirrors of VLT, GEMINI, and SUBARU. The performance of such precision optical components significantly depends on the physical parameters and the quality of their substrate materials. Within this paper selection criteria for mirror substrates will be discussed, thereby considering the important technical parameters as well as commercial points and aspects of project management. Qualities and limitations of classical mirror substrate materials like Zerodur, ULE, Sitall, borosilicate glass and Cervit will be evaluated and compared to new substrate materials like silicon carbide and beryllium. The different suppliers and their production processes are presented. In addition large mirrors of existing observatories and of telescopes under construction will be listed, thereby concentrating on mirrors above three meter in diameter. An outlook on material trends and on future astronomical telescopes closes this overview on the market of huge monolithic mirror substrates for optical astronomy.

  12. Oxide Heteroepitaxy for Flexible Optoelectronics.

    PubMed

    Bitla, Yugandhar; Chen, Ching; Lee, Hsien-Chang; Do, Thi Hien; Ma, Chun-Hao; Qui, Le Van; Huang, Chun-Wei; Wu, Wen-Wei; Chang, Li; Chiu, Po-Wen; Chu, Ying-Hao

    2016-11-30

    The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite's superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.

  13. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  14. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  15. An analysis of side readouts of monolithic scintillation crystals

    NASA Astrophysics Data System (ADS)

    Li, Xin; Furenlid, Lars R.

    2016-10-01

    We have explored a method of using the side surfaces of a thin monolithic scintillation crystal for reading out scintillation photons. A Monte-Carlo simulation was carried out for an LYSO crystal of 50:8mmx50:8mmx3mm with 5 silicon photomultipliers attached on each of the four side surfaces. With 511 keV gamma-rays, X-Y spatial resolution of 2:10mm was predicted with an energy resolution of 9:0%. We also explored adding optical barriers to improve the X-Y spatial resolution, and an X-Y spatial resolution of 786um was predicted with an energy resolution of 9:2%. Multiple layers can be stacked together and readout channels can be combined. Depth-of- interaction information (DOI) can be directly read out. This method provides an attractive detector module design for positron emission tomography (PET).

  16. Using optoelectronic sensors in the system PROTEUS

    NASA Astrophysics Data System (ADS)

    Zyczkowski, M.; Szustakowski, M.; Ciurapinski, W.; Piszczek, M.

    2010-10-01

    The paper presents the concept of optoelectronic devices for human protection in rescue activity. The system consists of an ground robots with predicted sensor. The multisensor construction of the system ensures significant improvement of security of using on-situ like chemical or explosive sensors. The article show a various scenario of use for individual sensor in system PROTEUS.

  17. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY

    2011-11-01

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  18. Efficient Optoelectronics Teaching in Undergraduate Engineering Curriculum

    ERIC Educational Resources Information Center

    Matin, M. A.

    2005-01-01

    The Engineering Department's vision for undergraduate education for the next century is to develop a set of laboratory experiences that are thoughtfully sequenced and integrated to promote the full development of students in all courses. Optoelectronics is one of the most important and most demanding courses in Electrical and Computer Engineering.…

  19. Optoelectronic Shaft-Angle Encoder Tolerates Misalignments

    NASA Technical Reports Server (NTRS)

    Osborne, Eric P.

    1991-01-01

    Optoelectronic shaft-angle encoder measures angle of rotation of shaft with high precision while minimizing effects of eccentricity and other misalignments. Grooves on disk serve as reference marks to locate reading heads and measure increments of rotation of disk. Shaft-angle encoder, resembling optical compact-disk drive, includes two tracking heads illuminating grooves on disk and measures reflections from them.

  20. Optoelectronic Integrated Circuits For Neural Networks

    NASA Technical Reports Server (NTRS)

    Psaltis, D.; Katz, J.; Kim, Jae-Hoon; Lin, S. H.; Nouhi, A.

    1990-01-01

    Many threshold devices placed on single substrate. Integrated circuits containing optoelectronic threshold elements developed for use as planar arrays of artificial neurons in research on neural-network computers. Mounted with volume holograms recorded in photorefractive crystals serving as dense arrays of variable interconnections between neurons.

  1. Monolithic Continuous-Flow Bioreactors

    NASA Technical Reports Server (NTRS)

    Stephanopoulos, Gregory; Kornfield, Julia A.; Voecks, Gerald A.

    1993-01-01

    Monolithic ceramic matrices containing many small flow passages useful as continuous-flow bioreactors. Ceramic matrix containing passages made by extruding and firing suitable ceramic. Pores in matrix provide attachment medium for film of cells and allow free movement of solution. Material one not toxic to micro-organisms grown in reactor. In reactor, liquid nutrients flow over, and liquid reaction products flow from, cell culture immobilized in one set of channels while oxygen flows to, and gaseous reaction products flow from, culture in adjacent set of passages. Cells live on inner surfaces containing flowing nutrient and in pores of walls of passages. Ready access to nutrients and oxygen in channels. They generate continuous high yield characteristic of immobilized cells, without large expenditure of energy otherwise incurred if necessary to pump nutrient solution through dense biomass as in bioreactors of other types.

  2. Monolithic solid electrolyte oxygen pump

    DOEpatents

    Fee, Darrell C.; Poeppel, Roger B.; Easler, Timothy E.; Dees, Dennis W.

    1989-01-01

    A multi-layer oxygen pump having a one-piece, monolithic ceramic structure affords high oxygen production per unit weight and volume and is thus particularly adapted for use as a portable oxygen supply. The oxygen pump is comprised of a large number of small cells on the order of 1-2 millimeters in diameter which form the walls of the pump and which are comprised of thin, i.e., 25-50 micrometers, ceramic layers of cell components. The cell components include an air electrode, an oxygen electrode, an electrolyte and interconnection materials. The cell walls form the passages for input air and for exhausting the oxygen which is transferred from a relatively dilute gaseous mixture to a higher concentration by applying a DC voltage across the electrodes so as to ionize the oxygen at the air electrode, whereupon the ionized oxygen travels through the electrolyte and is converted to oxygen gas at the oxygen electrode.

  3. Method of fabricating porous silicon carbide (SiC)

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1995-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  4. Optimization of monolithic columns for microfluidic devices

    NASA Astrophysics Data System (ADS)

    Pagaduan, Jayson V.; Yang, Weichun; Woolley, Adam T.

    2011-06-01

    Monolithic columns offer advantages as solid-phase extractors because they offer high surface area that can be tailored to a specific function, fast mass transport, and ease of fabrication. Porous glycidyl methacrylate-ethylene glycol dimethacrylate monoliths were polymerized in-situ in microfluidic devices, without pre-treatment of the poly(methyl methacrylate) channel surface. Cyclohexanol, 1-dodecanol and Tween 20 were used to control the pore size of the monoliths. The epoxy groups on the monolith surface can be utilized to immobilize target-specific probes such as antibodies, aptamers, or DNA for biomarker detection. Microfluidic devices integrated with solid-phase extractors should be useful for point-of-care diagnostics in detecting specific biomarkers from complex biological fluids.

  5. Monolithic solid-state lasers for spaceflight

    NASA Astrophysics Data System (ADS)

    Krainak, Michael A.; Yu, Anthony W.; Stephen, Mark A.; Merritt, Scott; Glebov, Leonid; Glebova, Larissa; Ryasnyanskiy, Aleksandr; Smirnov, Vadim; Mu, Xiaodong; Meissner, Stephanie; Meissner, Helmuth

    2015-02-01

    A new solution for building high power, solid state lasers for space flight is to fabricate the whole laser resonator in a single (monolithic) structure or alternatively to build a contiguous diffusion bonded or welded structure. Monolithic lasers provide numerous advantages for space flight solid-state lasers by minimizing misalignment concerns. The closed cavity is immune to contamination. The number of components is minimized thus increasing reliability. Bragg mirrors serve as the high reflector and output coupler thus minimizing optical coatings and coating damage. The Bragg mirrors also provide spectral and spatial mode selection for high fidelity. The monolithic structure allows short cavities resulting in short pulses. Passive saturable absorber Q-switches provide a soft aperture for spatial mode filtering and improved pointing stability. We will review our recent commercial and in-house developments toward fully monolithic solid-state lasers.

  6. Activated carbon monoliths for methane storage

    NASA Astrophysics Data System (ADS)

    Chada, Nagaraju; Romanos, Jimmy; Hilton, Ramsey; Suppes, Galen; Burress, Jacob; Pfeifer, Peter

    2012-02-01

    The use of adsorbent storage media for natural gas (methane) vehicles allows for the use of non-cylindrical tanks due to the decreased pressure at which the natural gas is stored. The use of carbon powder as a storage material allows for a high mass of methane stored for mass of sample, but at the cost of the tank volume. Densified carbon monoliths, however, allow for the mass of methane for volume of tank to be optimized. In this work, different activated carbon monoliths have been produced using a polymeric binder, with various synthesis parameters. The methane storage was studied using a home-built, dosing-type instrument. A monolith with optimal parameters has been fabricated. The gravimetric excess adsorption for the optimized monolith was found to be 161 g methane for kg carbon.

  7. Silicone metalization

    SciTech Connect

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  8. Silicone metalization

    SciTech Connect

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  9. Large-Scale Graphene Film Deposition for Monolithic Device Fabrication

    NASA Astrophysics Data System (ADS)

    Al-shurman, Khaled

    Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors. The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an urgent need for a new platform material to replace Si. Graphene is considered a promising material with enormous potential applications in many electronic and optoelectronics devices due to its superior properties. There are several techniques to produce graphene films. Among these techniques, chemical vapor deposition (CVD) offers a very convenient method to fabricate films for large-scale graphene films. Though CVD method is suitable for large area growth of graphene, the need for transferring a graphene film to silicon-based substrates is required. Furthermore, the graphene films thus achieved are, in fact, not single crystalline. Also, graphene fabrication utilizing Cu and Ni at high growth temperature contaminates the substrate that holds Si CMOS circuitry and CVD chamber as well. So, lowering the deposition temperature is another technological milestone for the successful adoption of graphene in integrated circuits fabrication. In this research, direct large-scale graphene film fabrication on silicon based platform (i.e. SiO2 and Si3N4) at low temperature was achieved. With a focus on low-temperature graphene growth, hot-filament chemical vapor deposition (HF-CVD) was utilized to synthesize graphene film using 200 nm thick nickel film. Raman spectroscopy was utilized to examine graphene formation on the bottom side of the Ni film

  10. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  11. Optoelectronic Effect in Laser Transmitter Modules

    NASA Astrophysics Data System (ADS)

    Luc, V. V.; Mien, V. D.; Eliseev, P. G.

    2001-04-01

    Optoelectronic signals in laser transmitter modules based on the voltage saturation effect of laser diode have been experimentally studied for the GaAlAs/GaAs (λ = 830 nm) and InGaAsP/InP (λ= 1310 nm) structures. The behavior of the observed optoelectronic signals has been explained as the changing of the relative position of carrier quazi-Fermi levels. The experimental method for definition of the density inversion threshold in the active region of laser diodes has been established as well as the active region internal gain has been measured. These results give the possibility of using laser transmitter modules at the same time as an amplifier and optical switch.

  12. Terahertz optoelectronics with surface plasmon polariton diode.

    PubMed

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  13. Smart Sensing Strip Using Monolithically Integrated Flexible Flow Sensor for Noninvasively Monitoring Respiratory Flow.

    PubMed

    Jiang, Peng; Zhao, Shuai; Zhu, Rong

    2015-12-15

    This paper presents a smart sensing strip for noninvasively monitoring respiratory flow in real time. The monitoring system comprises a monolithically-integrated flexible hot-film flow sensor adhered on a molded flexible silicone case, where a miniaturized conditioning circuit with a Bluetooth4.0 LE module are packaged, and a personal mobile device that wirelessly acquires respiratory data transmitted from the flow sensor, executes extraction of vital signs, and performs medical diagnosis. The system serves as a wearable device to monitor comprehensive respiratory flow while avoiding use of uncomfortable nasal cannula. The respiratory sensor is a flexible flow sensor monolithically integrating four elements of a Wheatstone bridge on single chip, including a hot-film resistor, a temperature-compensating resistor, and two balancing resistors. The monitor takes merits of small size, light weight, easy operation, and low power consumption. Experiments were conducted to verify the feasibility and effectiveness of monitoring and diagnosing respiratory diseases using the proposed system.

  14. MONOLITHIC ACTIVE PIXEL MATRIX WITH BINARY COUNTERS IN AN SOI PROCESS.

    SciTech Connect

    DUPTUCH,G.; YAREMA, R.

    2007-06-07

    The design of a Prototype monolithic active pixel matrix, designed in a 0.15 {micro}m CMOS SOI Process, is presented. The process allowed connection between the electronics and the silicon volume under the layer of buried oxide (BOX). The small size vias traversing through the BOX and implantation of small p-type islands in the n-type bulk result in a monolithic imager. During the acquisition time, all pixels register individual radiation events incrementing the counters. The counting rate is up to 1 MHz per pixel. The contents of counters are shifted out during the readout phase. The designed prototype is an array of 64 x 64 pixels and the pixel size is 26 x 26 {micro}m{sup 2}.

  15. Optoelectronically probing the density of nanowire surface trap states to the single state limit

    SciTech Connect

    Dan, Yaping

    2015-02-02

    Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 10{sup 9 }cm{sup −2}/eV at deep levels to 10{sup 12 }cm{sup −2}/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

  16. Origin of the visible emission of black silicon microstructures

    SciTech Connect

    Fabbri, Filippo E-mail: giancarlo.salviati@cnr.it; Lin, Yu-Ting; Bertoni, Giovanni; Rossi, Francesca; Salviati, Giancarlo E-mail: giancarlo.salviati@cnr.it; Mazur, Eric

    2015-07-13

    Silicon, the mainstay semiconductor in microelectronics, is considered unsuitable for optoelectronic applications due to its indirect electronic band gap that limits its efficiency as light emitter. Here, we univocally determine at the nanoscale the origin of visible emission in microstructured black silicon by cathodoluminescence spectroscopy and imaging. We demonstrate the formation of amorphous silicon oxide microstructures with a white emission. The white emission is composed by four features peaking at 1.98 eV, 2.24 eV, 2.77 eV, and 3.05 eV. The origin of such emissions is related to SiO{sub x} intrinsic point defects and to the sulfur doping due to the laser processing. Similar results go in the direction of developing optoelectronic devices suitable for silicon-based circuitry.

  17. Organic Optoelectronic Materials: Mechanisms and Applications.

    PubMed

    Ostroverkhova, Oksana

    2016-11-23

    Organic (opto)electronic materials have received considerable attention due to their applications in thin-film-transistors, light-emitting diodes, solar cells, sensors, photorefractive devices, and many others. The technological promises include low cost of these materials and the possibility of their room-temperature deposition from solution on large-area and/or flexible substrates. The article reviews the current understanding of the physical mechanisms that determine the (opto)electronic properties of high-performance organic materials. The focus of the review is on photoinduced processes and on electronic properties important for optoelectronic applications relying on charge carrier photogeneration. Additionally, it highlights the capabilities of various experimental techniques for characterization of these materials, summarizes top-of-the-line device performance, and outlines recent trends in the further development of the field. The properties of materials based both on small molecules and on conjugated polymers are considered, and their applications in organic solar cells, photodetectors, and photorefractive devices are discussed.

  18. Light Management with Nanostructures for Optoelectronic Devices.

    PubMed

    Leung, Siu-Fung; Zhang, Qianpeng; Xiu, Fei; Yu, Dongliang; Ho, Johnny C; Li, Dongdong; Fan, Zhiyong

    2014-04-17

    Light management is of paramount importance to improve the performance of optoelectronic devices including photodetectors, solar cells, and light-emitting diodes. Extensive studies have shown that the efficiency of these optoelectronic devices largely depends on the device structural design. In the case of solar cells, three-dimensional (3-D) nanostructures can remarkably improve device energy conversion efficiency via various light-trapping mechanisms, and a number of nanostructures were fabricated and exhibited tremendous potential for highly efficient photovoltaics. Meanwhile, these optical absorption enhancement schemes can benefit photodetectors by achieving higher quantum efficiency and photon extraction efficiency. On the other hand, low extraction efficiency of a photon from the emissive layer to outside often puts a constraint on the external quantum efficiency (EQE) of LEDs. In this regard, different designs of device configuration based on nanostructured materials such as nanoparticles and nanotextures were developed to improve the out-coupling efficiency of photons in LEDs under various frameworks such as waveguides, plasmonic theory, and so forth. In this Perspective, we aim to provide a comprehensive review of the recent progress of research on various light management nanostructures and their potency to improve performance of optoelectronic devices including photodetectors, solar cells, and LEDs.

  19. Intriguing Optoelectronic Properties of Metal Halide Perovskites.

    PubMed

    Manser, Joseph S; Christians, Jeffrey A; Kamat, Prashant V

    2016-11-09

    A new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewed with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH3NH3PbI3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2-dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.

  20. Advanced polymer systems for optoelectronic integrated circuit applications

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.; Stengel, Kelly M. T.; Shacklette, Lawrence W.; Norwood, Robert A.; Xu, Chengzeng; Wu, Chengjiu; Yardley, James T.

    1997-01-01

    An advanced versatile low-cost polymeric waveguide technology is proposed for optoelectronic integrated circuit applications. We have developed high-performance organic polymeric materials that can be readily made into both multimode and single-mode optical waveguide structures of controlled numerical aperture (NA) and geometry. These materials are formed from highly crosslinked acrylate monomers with specific linkages that determine properties such as flexibility, toughness, loss, and stability against yellowing and humidity. These monomers are intermiscible, providing for precise adjustment of the refractive index from 1.30 to 1.60. Waveguides are formed photolithographically, with the liquid monomer mixture polymerizing upon illumination in the UV via either mask exposure or laser direct-writing. A wide range of rigid and flexible substrates can be used, including glass, quartz, oxidized silicon, glass-filled epoxy printed circuit board substrate, and flexible polyimide film. We discuss the use of these materials on chips and on multi-chip modules (MCMs), specifically in transceivers where we adaptively produced waveguides on vertical-cavity surface-emitting lasers (VCSELs) embedded in transmitter MCMs and on high- speed photodetector chips in receiver MCMs. Light coupling from and to chips is achieved by cutting 45 degree mirrors using excimer laser ablation. The fabrication of our polymeric structures directly on the modules provides for stability, ruggedness, and hermeticity in packaging.

  1. Electronic and optoelectronic materials and devices inspired by nature.

    PubMed

    Meredith, P; Bettinger, C J; Irimia-Vladu, M; Mostert, A B; Schwenn, P E

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  2. Organic (opto)electronic materials: understanding charge carrier dynamics

    NASA Astrophysics Data System (ADS)

    Ostroverkhova, Oksana

    2008-05-01

    There is growing interest in using organic (opto)electronic materials for applications in electronics and photonics. In particular, organic semiconductor thin films offer several advantages over traditional silicon technology, including low-cost processing, the potential for large-area flexible devices, high-efficiency light emission, and widely tunable properties through functionalization of the molecules. Over the past decade, remarkable progress in materials design and purification has been made, which led to applications of organic semiconductors in light-emitting diodes, polymer lasers, photovoltaic cells, high-speed photodetectors, organic thin-film transistors, and many others. Most of the applications envisioned for organic semiconductors rely on their conductive or photoconductive properties. However, despite remarkable progress in organic electronics and photonics, the nature of charge carrier photogeneration and transport in organic semiconductors is not completely understood and remains controversial, partly due to difficulties in assessing intrinsic properties that are often masked by impurities, grain boundaries, etc. Measurements of charge carrier dynamics at picosecond time scales after excitation reveal the intrinsic nature of mobile charge carriers before they are trapped at defect sites. In this presentation, I will review the current state of the field and summarize our recent results on photoconductivity of novel high-performance organic semiconductors (such as functionalized pentacene and anthradithiophene thin films) from picoseconds to seconds after photoexcitation. Photoluminescent properties of these novel materials will also be discussed.

  3. Electronic and optoelectronic materials and devices inspired by nature

    NASA Astrophysics Data System (ADS)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  4. Monolithically integrated Ge CMOS laser

    NASA Astrophysics Data System (ADS)

    Camacho-Aguilera, Rodolfo

    2014-02-01

    Ge-on-Si devices are explored for photonic integration. Through the development of better growth techniques, monolithic integration, laser design and prototypes, it was possible to probe Ge light emitters with emphasis on lasers. Preliminary worked shows thermal photonic behavior capable of enhancing lamination at high temperatures. Increase luminescence is observed up to 120°C from L-band contribution. Higher temperatures show contribution from Δ -band. The increase carrier thermal contribution suggests high temperature applications for Ge light emitters. A Ge electrically pumped laser was probed under 0.2% biaxial strain and doping concentration ~4.5×1019cm-3 n-type. Ge pnn lasers exhibit a gain >1000cm-1 with 8mW power output, presenting a spectrum range of over 200nm, making Ge the ideal candidate for Si photonics. Large temperatures fluctuations and process limit the present device. Theoretically a gain of >4000cm- gain is possible with a threshold of as low as 1kA/cm2. Improvements in Ge work

  5. Uncooled monolithic ferroelectric IRFPA technology

    NASA Astrophysics Data System (ADS)

    Belcher, James F.; Hanson, Charles M.; Beratan, Howard R.; Udayakumar, K. R.; Soch, Kevin L.

    1998-10-01

    Once relegated to expensive military platforms, occasionally to civilian platforms, and envisioned for individual soldiers, uncooled thermal imaging affords cost-effective solutions for police cars, commercial surveillance, driving aids, and a variety of other industrial and consumer applications. System prices are continuing to drop, and swelling production volume will soon drive prices substantially lower. The impetus for further development is to improve performance. Hybrid barium strontium titanate (BST) detectors currently in production are relatively inexpensive, but have limited potential for improved performance. The MTF at high frequencies is limited by thermal conduction through the optical coating. Microbolometer arrays in development at Raytheon have recently demonstrated performance superior to hybrid detectors. However, microbolometer technology lacks a mature, low-cost system technology and an abundance of upgradable, deployable system implementations. Thin-film ferroelectric (TFFE) detectors have all the performance potential of microbolometers. They are also compatible with numerous fielded and planned system implementations. Like the resistive microbolometer, the TFFE detector is monolithic; i.e., the detector material is deposited directly on the readout IC rather than being bump bonded to it. Imaging arrays of 240 X 320 pixels have been produced, demonstrating the feasibility of the technology.

  6. Shape engineering for electronic and optoelectronic properties of Si nanostructure solar cells

    NASA Astrophysics Data System (ADS)

    He, Yan; Zhao, Yipeng; Quan, Jun; Ouyang, Gang

    2016-10-01

    An analytical model is developed to explore the shape-dependent electronic and optoelectronic properties of silicon nanostructure solar cells, including nanocones (NCs), nanowires (NWs), and truncated-nanocones (TNCs), on the basis of atomic-bond-relaxation consideration and detailed balance principle. It is found that the inhomogeneous NCs can not only make the band gap shrink gradually from the top to the bottom, but also suppress the surface recombination and enhance light absorption. Moreover, the optimal performance of silicon nanostructures can be achieved through modulating the geometrical parameters. Strikingly, the SiNCs show the highest solar conversion efficiency compared with that of NWs and TNCs under identical conditions, which suggest that this kind of nanostructures could be expected to be applicable for the new-typed and friendly alternative solar cell unit.

  7. Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications.

    PubMed

    Roussel, M; Talbot, E; Pratibha Nalini, R; Gourbilleau, F; Pareige, P

    2013-09-01

    Due to the quantum confinement, silicon nanoclusters (Si-ncs) embedded in a dielectric matrix are of prime interest for new optoelectronics and microelectronics applications. In this context, SiO(x)/SiO₂ multilayers have been prepared by magnetron sputtering and subsequently annealed to induce phase separation and Si clusters growth. The aim of this paper is to study phase separation processes and formation of nanoclusters in SiO(x)/SiO₂ multilayers by atom probe tomography. Influences of the silicon supersaturation, annealing temperature and SiO(x) and SiO₂ layer thicknesses on the final microstructure have been investigated. It is shown that supersaturation directly determines phase separation regime between nucleation/classical growth and spinodal decomposition. Annealing temperature controls size of the particles and interface with the surrounding matrix. Layer thicknesses directly control Si-nc shapes from spherical to spinodal-like structures.

  8. Method of forming crystalline silicon devices on glass

    DOEpatents

    McCarthy, A.M.

    1995-03-21

    A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

  9. Method of forming crystalline silicon devices on glass

    DOEpatents

    McCarthy, Anthony M.

    1995-01-01

    A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

  10. Monolithic and mechanical multijunction space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1990-01-01

    Monolithic and mechanically stacked tandem solar cells have been fabricated with encouraging AM0 efficiencies summarized as: monolithic GaAs/Ge: 19.1 percent (28 C, 4 sq cm); monolithic InP/Ga0.47In0.53As: 22.2 percent (25 C, 0.296 sq cm); monolithic AlGaAs/GaAs/InGaAs: 27.6 percent (80 C, 0.2 sq cm, 100 X); mechanically stacked GaAs/GaSb: 30.8 percent (25 C, 0.049 sq cm, 100 X); and mechanically stacked GaAs/CuInSe2: 23.1 percent (25 C, 4 sq cm). Significant improvement in tandem cell efficiencies nearing to theoretical predictions has been projected with the improvement in cell material quality and processing. Thin-film cells offer improved specific power. It is pointed out that both the monolithic and mechanically stacked cells have their own problems as to size, processing, current-voltage matching, weight, etc. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full spectrum range simulators are required to measure efficiencies correctly.

  11. GaAs monolithic RF modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  12. Taking a Large Monolith to Use for Teaching Soil Morphology.

    ERIC Educational Resources Information Center

    Smith, B. R.; And Others

    1989-01-01

    Described is a technique for taking a large monolith for the purpose of teaching soil structure. Materials and procedures are detailed. A survey of 93 students indicated that the larger monolith was preferred over the commonly used narrow ones. (CW)

  13. Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects

    NASA Astrophysics Data System (ADS)

    Gao, Yuanda

    Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

  14. Consolidation and densification methods for fibrous monolith processing

    SciTech Connect

    Sutaria, Manish P.; Rigali, Mark J.; Cipriani, Ronald A.; Artz, Gregory J.; Mulligan, Anthony C.

    2006-06-20

    Methods for consolidation and densification of fibrous monolith composite structures are provided. Consolidation and densification of two- and three-dimensional fibrous monolith components having complex geometries can be achieved by pressureless sintering. The fibrous monolith composites are formed from filaments having at least a first material composition generally surrounded by a second material composition. The composites are sintered at a pressure of no more than about 30 psi to provide consolidated and densified fibrous monolith composites.

  15. Designing Catalytic Monoliths For Closed-Cycle CO2 Lasers

    NASA Technical Reports Server (NTRS)

    Guinn, Keith; Herz, Richard K.; Goldblum, Seth; Noskowski, ED

    1992-01-01

    LASCAT (Design of Catalytic Monoliths for Closed-Cycle Carbon Dioxide Lasers) computer program aids in design of catalyst in monolith by simulating effects of design decisions on performance of laser. Provides opportunity for designer to explore tradeoffs among activity and dimensions of catalyst, dimensions of monolith, pressure drop caused by flow of gas through monolith, conversion of oxygen, and other variables. Written in FORTRAN 77.

  16. Assembly of opto-electronic module with improved heat sink

    DOEpatents

    Chan, Benson; Fortier, Paul Francis; Freitag, Ladd William; Galli, Gary T.; Guindon, Francois; Johnson, Glen Walden; Letourneau, Martial; Sherman, John H.; Tetreault, Real

    2004-11-23

    A heat sink for a transceiver optoelectronic module including dual direct heat paths and a structure which encloses a number of chips having a central web which electrically isolates transmitter and receiver chips from each other. A retainer for an optical coupler having a port into which epoxy is poured. An overmolded base for an optoelectronic module having epoxy flow controller members built thereon. Assembly methods for an optoelectronic module including gap setting and variation of a TAB bonding process.

  17. A High Resolution Monolithic Crystal, DOI, MR Compatible, PET Detector

    SciTech Connect

    Robert S Miyaoka

    2012-03-06

    The principle objective of this proposal is to develop a positron emission tomography (PET) detector with depth-of-interaction (DOI) positioning capability that will achieve state of the art spatial resolution and sensitivity performance for small animal PET imaging. When arranged in a ring or box detector geometry, the proposed detector module will support <1 mm3 image resolution and >15% absolute detection efficiency. The detector will also be compatible with operation in a MR scanner to support simultaneous multi-modality imaging. The detector design will utilize a thick, monolithic crystal scintillator readout by a two-dimensional array of silicon photomultiplier (SiPM) devices using a novel sensor on the entrance surface (SES) design. Our hypothesis is that our single-ended readout SES design will provide an effective DOI positioning performance equivalent to more expensive dual-ended readout techniques and at a significantly lower cost. Our monolithic crystal design will also lead to a significantly lower cost system. It is our goal to design a detector with state of the art performance but at a price point that is affordable so the technology can be disseminated to many laboratories. A second hypothesis is that using SiPM arrays, the detector will be able to operate in a MR scanner without any degradation in performance to support simultaneous PET/MR imaging. Having a co-registered MR image will assist in radiotracer localization and may also be used for partial volume corrections to improve radiotracer uptake quantitation. The far reaching goal of this research is to develop technology for medical research that will lead to improvements in human health care.

  18. Monolithic and mechanical multijunction space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1992-01-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  19. Development of a monolithic ferrite memory array

    NASA Technical Reports Server (NTRS)

    Heckler, C. H., Jr.; Bhiwandker, N. C.

    1972-01-01

    The results of the development and testing of ferrite monolithic memory arrays are presented. This development required the synthesis of ferrite materials having special magnetic and physical characteristics and the development of special processes; (1) for making flexible sheets (laminae) of the ferrite composition, (2) for embedding conductors in ferrite, and (3) bonding ferrite laminae together to form a monolithic structure. Major problems encountered in each of these areas and their solutions are discussed. Twenty-two full-size arrays were fabricated and fired during the development of these processes. The majority of these arrays were tested for their memory characteristics as well as for their physical characteristics and the results are presented. The arrays produced during this program meet the essential goals and demonstrate the feasibility of fabricating monolithic ferrite memory arrays by the processes developed.

  20. A 30 GHz monolithic receive module

    NASA Technical Reports Server (NTRS)

    Mondal, J.; Contolatis, T.; Geddes, J.; Bauhahn, P.; Sokolov, V.

    1990-01-01

    The technical achievements and deliveries made during the duration of the program to develop a 30 GHz monolithic receive module for communication feed array applications and to deliver submodules and 30 GHz monolithic receive modules for experimental evaluation are discussed. Key requirements include an overall receive module noise figure of 5 dB, a 30 dB RF-to-RF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. In addition, the monolithic receive module design addresses a cost goal of less than one thousand dollars (1980 dollars) per module in unit buys of 5,000 or more, and a mechanical configuration that is applicable to a spaceborne phase array system. An additional task for the development and delivery of 32 GHz phase shifter integrated circuit (IC) for deep space communication is also described.

  1. Making Porous Luminescent Regions In Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W.; Jones, Eric W.

    1994-01-01

    Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

  2. Silicon and germanium nanocrystals: properties and characterization

    PubMed Central

    Carvalho, Alexandra; Coutinho, José

    2014-01-01

    Summary Group-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries. Over the last two decades of research, their potential for application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challenges with no parallel in the respective bulk material counterparts have arisen. In this review, we consider what has been achieved and what are the current limitations with regard to growth, characterization and modeling of silicon and germanium nanocrystals and related materials. PMID:25383290

  3. Polymer network/carbon layer on monolith support and monolith catalytic reactor

    DOEpatents

    Nordquist, Andrew Francis; Wilhelm, Frederick Carl; Waller, Francis Joseph; Machado, Reinaldo Mario

    2003-08-26

    The present invention relates to an improved monolith catalytic reactor and a monolith support. The improvement in the support resides in a polymer network/carbon coating applied to the surface of a porous substrate and a catalytic metal, preferably a transition metal catalyst applied to the surface of the polymer network/carbon coating. The monolith support has from 100 to 800 cells per square inch and a polymer network/carbon coating with surface area of from 0.1 to 15 m.sup.2 /gram as measured by adsorption of N.sub.2 or Kr using the BET method.

  4. Monolithic integration of a DFB superlattice laser using high energy ion implantation

    NASA Astrophysics Data System (ADS)

    Pronko, P. P.; Rai, A. K.; Ingram, D.; McCormick, A. W.; Ezis, A.

    1991-02-01

    The objective of this research is to develop the use of high energy (MeV) and medium energy (keV) ion beams for the purpose of selectively modifying the optical properties of superlattice systems consisting of mixed III-V compound semiconductors. In particular, the research was directed at the AlGaAs/GaAs multilayer superlattice system and its potential use in fabricating a monolithically integrated distributed feedback laser for use in optoelectronic circuits. The optical properties of such semiconductor superlattice systems have been shown to be sensitive to ion bombardment and its associated implantation and mixing process. The use of ion beams makes it possible to modify these structures through selective masking so that optical elements such as lasers, waveguides, and switches could be fabricated under the constraints imposed by monolithic integration. In particular, investigations were made into the effects of implantation controlled disordering of AlGaAs and GaAs through impurity, defect, and ion beam mixing effects. The results of this work were applied to the development and fabrication of an ion implanted distributed feedback (DFB) type laser in a multilayer superlattice system.

  5. The 30-GHz monolithic receive module

    NASA Technical Reports Server (NTRS)

    Bauhahn, P.; Geddes, J.; Sokolov, V.; Contolatis, T.

    1988-01-01

    The fourth year progress is described on a program to develop a 27.5 to 30 GHz GaAs monolithic receive module for spaceborne-communication antenna feed array applications, and to deliver submodules for experimental evaluation. Program goals include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. Submicron gate length single and dual gate FETs are described and applied in the development of monolithic gain control amplifiers and low noise amplifiers. A two-stage monolithic gain control amplifier based on ion implanted dual gate MESFETs was designed and fabricated. The gain control amplifier has a gain of 12 dB at 29 GHz with a gain control range of over 13 dB. A two-stage monolithic low noise amplifier based on ion implanted MESFETs which provides 7 dB gain with 6.2 dB noise figure at 29 GHz was also developed. An interconnected receive module containing LNA, gain control, and phase shifter submodules was built using the LNA and gain control ICs as well as a monolithic phase shifter developed previously under this program. The design, fabrication, and evaluation of this interconnected receiver is presented. Progress in the development of an RF/IF submodule containing a unique ion implanted diode mixer diode and a broadband balanced mixer monolithic IC with on-chip IF amplifier and the initial design of circuits for the RF portion of a two submodule receiver are also discussed.

  6. Physical and chemical sensing using monolithic semiconductor optical transducers

    NASA Astrophysics Data System (ADS)

    Zappe, Hans P.; Hofstetter, Daniel; Maisenhoelder, Bernd; Moser, Michael; Riel, Peter; Kunz, Rino E.

    1997-09-01

    We present two monolithically integrated optical sensor systems based on semiconductor photonic integrated circuits. These compact, robust and highly functional transducers perform all necessary optical and electro-optical functions on-chip; extension to multi-sensor arrays is easily envisaged. A monolithic Michelson interferometer for high-resolution displacement measurement and a monolithic Mach-Zehnder interferometer for refractometry are discussed.

  7. Distributed Amplifier Monolithic Microwave Integrated Circuit (MMIC) Design

    DTIC Science & Technology

    2012-10-01

    Distributed Amplifier Monolithic Microwave Integrated Circuit (MMIC) Design by John E. Penn ARL-TR-6237 October 2012...Distributed Amplifier Monolithic Microwave Integrated Circuit (MMIC) Design John E. Penn Sensors and Electron Devices Directorate, ARL...TITLE AND SUBTITLE Distributed Amplifier Monolithic Microwave Integrated Circuit (MMIC) Design 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c

  8. Shallow halogen vacancies in halide optoelectronic materials

    DOE PAGES

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VHmore » is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.« less

  9. Shallow halogen vacancies in halide optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Du, Mao-Hua

    2014-11-01

    Halogen vacancies (VH ) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., C H3N H3Pb I3 and TlBr. Both C H3N H3Pb I3 and TlBr have been found to have shallow VH , in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., C H3N H3Pb I3 , C H3N H3Sn I3 (photovoltaic materials), TlBr, and CsPbB r3 (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of n s2 ions both play important roles in creating shallow VH in halides such as C H3N H3Pb I3 , C H3N H3Sn I3 , and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH , such as those with large cation-cation distances and low anion coordination numbers and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH . The results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  10. UPDATE ON MONOLITHIC FUEL FABRICATION METHODS

    SciTech Connect

    C. R. Clark; J. F. Jue; G. A. Moore; N. P. Hallinan; B. H. Park; D. E. Burkes

    2006-10-01

    Efforts to develop a viable monolithic research reactor fuel plate have continued at Idaho National Laboratory. These efforts have concentrated on both fabrication process refinement and scale-up to produce full sized fuel plates. Progress at INL has led to fabrication of hot isostatic pressed uranium-molybdenum bearing monolithic fuel plates. These miniplates are part of the RERTR-8 miniplate irradiation test. Further progress has also been made on friction stir weld processing which has been used to fabricate full size fuel plates which will be irradiated in the ATR and OSIRIS reactors.

  11. Increased thermal conductivity monolithic zeolite structures

    DOEpatents

    Klett, James; Klett, Lynn; Kaufman, Jonathan

    2008-11-25

    A monolith comprises a zeolite, a thermally conductive carbon, and a binder. The zeolite is included in the form of beads, pellets, powders and mixtures thereof. The thermally conductive carbon can be carbon nano-fibers, diamond or graphite which provide thermal conductivities in excess of about 100 W/mK to more than 1,000 W/mK. A method of preparing a zeolite monolith includes the steps of mixing a zeolite dispersion in an aqueous colloidal silica binder with a dispersion of carbon nano-fibers in water followed by dehydration and curing of the binder is given.

  12. Statistical conjugated polymers comprising optoelectronically distinct units.

    PubMed

    Hollinger, Jon; Sun, Jing; Gao, Dong; Karl, Dominik; Seferos, Dwight S

    2013-03-12

    Poly(3-heptylselenophene)-stat-poly(3-hexylthiophene) is synthesized and characterized in terms of its crystallinity and performance in an organic photovoltaic (OPV) cell. Despite the random distribution of units along the polymer main chain, the material is semi-crystalline, as demonstrated by differential scanning calorimetry and wide-angle X-ray diffraction. Thin-film absorption suggests an increased compatibility than seen with 3-hexylselenophene monomer. Optoelectronic properties are an average of the two homopolymers, and OPV performance is enhanced by a broadened absorption profile and a favorable morphology.

  13. In-situ nanochemistry for optoelectronics

    NASA Astrophysics Data System (ADS)

    Kim, Won Jin

    This thesis describes recent results on simple methods to arrange nanosize objects such as semiconductor nanocrystals, noble metal nanoparticles, and upconversion nanophosphors by means of top-down processes. Specific focus is directed towards approaches to produce predefined patterns of various nanostructure materials using optical lithography for direct writing of films for optoelectronic and electronic devices. To obtain photo-patternability, the nanostructure materials [for example semiconductor nanocrystals (CdSe, CdTe, PbSe), metallic nanoparticles (Ag), upconversion nanophosphors (Er3+/Yb 3+ or Tm3+/Yb3+ co-doped NaYF4 ), and transparent conducting oxide nanoparticles (ITO, ZnO)] were functionalized by incorporation of the functional ligand t-butoxycarbonyl (t-BOC) which has an acid-labile moiety. The t-BOC group undergoes a cleavage, when subjected to UV irradiation in the presence of a photo acid generator (PAG) to releases isobutene and carbon dioxide. Depending on the need of the application, either the exposed regions (negative pattern) or the non-exposed regions (positive pattern) could be developed from the exposed films by appropriate solvent selection. The photo exposed regions of the film are rendered hydrophilic due to the degradation of the t-BOC, the un-exposed regions remain hydrophobic. This solubility change in the QDs is the basis of their patternablity. The un-exposed regions can be removed to obtain the negative pattern by washing with hydrophobic solvents, whereas the exposed regions can be selectively removed to obtain positive pattern by washing with hydrophilic solvents. This change in the surface chemistry results in the ability to photo-pattern the various nanostructure materials where desired for a number of optoelectronic device geometries. We demonstrate that the ultimate resolution (linewidth and spacing) of this technique is below submicron. Details on technological aspects concerning nanoparticle patterning as well as practical

  14. ARTICLES: Optoelectronic readout with an injection laser

    NASA Astrophysics Data System (ADS)

    Luc, Vu V.; Eliseev, P. G.; Man'ko, Margarita A.; Mikaelyan, T. T.; Okhotnikov, O. G.; Sokolov, S. N.

    1982-09-01

    An investigation was made of the possibility of utilizing an injection heterolaser in optical devices for data retrieval. An injection laser was used both as a source and detector of its own radiation reflected from a data carrier (optoelectronic readout). The influence of the reflected radiation was due to quasisteady modulation of the Q factor of the resonator, which was accompanied by modulation of the voltage across the laser diode. A study was made of the influence of the pump current on the useful signal and it was found that this current was related to the differential resistance of the laser diode.

  15. A Design Methodology for Optoelectronic VLSI

    DTIC Science & Technology

    2007-01-01

    soldered to a copper -clad printed circuit (PC) board, are no longer sufficient for today’s high-speed ICs. A processing chip that can compute data at a rate...design approach. A new design methodology has to be adopted to take advan- tage of the benefits that FSOI offers. Optoelectronic VLSI is the coupling of...and connections are made from chip to chip via traces of copper wire, as shown in Figure 2-2. The signal from a logic gate on one chip to a logic gate

  16. Second Generation Monolithic Full-depletion Radiation Sensor with Integrated CMOS Circuitry

    SciTech Connect

    Segal, J.D.; Kenney, C.J.; Parker, S.I.; Aw, C.H.; Snoeys, W.J.; Wooley, B.; Plummer, J.D.; /Stanford U., Elect. Eng. Dept.

    2011-05-20

    A second-generation monolithic silicon radiation sensor has been built and characterized. This pixel detector has CMOS circuitry fabricated directly in the high-resistivity floatzone substrate. The bulk is fully depleted from bias applied to the backside diode. Within the array, PMOS pixel circuitry forms the first stage amplifiers. Full CMOS circuitry implementing further amplification as well as column and row logic is located in the periphery of the pixel array. This allows a sparse-field readout scheme where only pixels with signals above a certain threshold are readout. We describe the fabrication process, circuit design, system performance, and results of gamma-ray radiation tests.

  17. Device characterization of the VCSEL-on-silicon as an on chip light source

    NASA Astrophysics Data System (ADS)

    Kwack, Myung-Joon; Jang, Ki-Seok; Joo, Jiho; Park, Hyundai; Oh, Jin Hyuk; Park, Jaegyu; Kim, Sanggi; Kim, Gyungock

    2016-03-01

    Advancement of silicon photonics technology can offer a new dimension in data communications with un-precedent bandwidth. Increasing the integration level in the silicon photonics is required to develop compact high-performance chip-level optical interconnects for future systems. Especially, monolithic integration of light source on a silicon wafer is important for future silicon photonic integrated circuits, since realizing a compact on-chip light source on a silicon wafer is a serious issue which impedes practical implementation of the silicon photonic interconnects. At present, due to the lack of a practical light source based on Group IV elements, flip chip-bonded or packaged lasers based on III-V semiconductor are usually being used as external light sources, to feed silicon modulators on SOI wafers to complete a photonic transmitter, except the reported silicon hybrid lasers monolithic-integrated on SOI wafers. To overcome above problem, we have proposed a compact on-chip light source, the directly monolithic-integrated VCSEL on a bulk silicon wafer (VCSEL-on-Si), based on the transplanted epitaxial film by substrate lift-off process and following device-fabrication on the bulk Si wafer. This can offer practical low-power-consumption light sources integrated on a silicon wafer, which can provide a complete chip-level I/O set when combined with monolithic-integrated vertical-illumination Ge-on-Si photodetectors on the same silicon wafer. In this work, we report the characterization of direct-modulation VCSELs-on-Si for λ ~850 nm with CW optical output power > ~2 mW and the threshold current < ~3 mA, over 10 Gb/s operations. We also discuss about the thermal characteristics of the VCSELs-on-Si.

  18. 77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-30

    ... COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... the United States after importation of certain optoelectronic devices for fiber optic communications... importation of certain optoelectronic devices for fiber optic communications, components thereof, and...

  19. Time-Resolved Measurements in Optoelectronic Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Bearman, Gregory; Kossakovski, Dmitri

    2003-01-01

    A report presents discussion of time-resolved measurements in optoelectronic microbioanalysis. Proposed microbioanalytical laboratory-on-a-chip devices for detection of microbes and toxic chemicals would include optoelectronic sensors and associated electronic circuits that would look for fluorescence or phosphorescence signatures of multiple hazardous biomolecules in order to detect which ones were present in a given situation. The emphasis in the instant report is on gating an active-pixel sensor in the time domain, instead of filtering light in the wavelength domain, to prevent the sensor from responding to a laser pulse used to excite fluorescence or phosphorescence while enabling the sensor to respond to the decaying fluorescence or phosphorescence signal that follows the laser pulse. The active-pixel sensor would be turned on after the laser pulse and would be used to either integrate the fluorescence or phosphorescence signal over several lifetimes and many excitation pulses or else take time-resolved measurements of the fluorescence or phosphorescence. The report also discusses issues of multiplexing and of using time-resolved measurements of fluorophores with known different fluorescence lifetimes to distinguish among them.

  20. Optoelectronic inventory system for special nuclear material

    SciTech Connect

    Sieradzki, F.H.

    1994-01-01

    In support of the Department of Energy`s Dismantlement Program, the Optoelectronics Characterization and Sensor Development Department 2231 at Sandia National Laboratories/New Mexico has developed an in situ nonintrusive Optoelectronic Inventory System (OIS) that has the potential for application wherever periodic inventory of selected material is desired. Using a network of fiber-optic links, the OIS retrieves and stores inventory signatures from data storage devices (which are permanently attached to material storage containers) while inherently providing electromagnetic pulse immunity and electrical noise isolation. Photovoltaic cells (located within the storage facility) convert laser diode optic power from a laser driver to electrical energy. When powered and triggered, the data storage devices sequentially output their digital inventory signatures through light-emitting diode/photo diode data links for retrieval and storage in a mobile data acquisition system. An item`s exact location is determined through fiber-optic network and software design. The OIS provides an on-demand method for obtaining acceptable inventory reports while eliminating the need for human presence inside the material storage facility. By using modularization and prefabricated construction with mature technologies and components, an OIS installation with virtually unlimited capacity can be tailored to the customer`s requirements.

  1. Optoelectronic pH Meter: Further Details

    NASA Technical Reports Server (NTRS)

    Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

    2009-01-01

    A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

  2. Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Kum, Hyun; Seong, Han-Kyu; Lim, Wantae; Chun, Daemyung; Kim, Young-Il; Park, Youngsoo; Yoo, Geonwook

    2017-01-01

    We present a method of epitaxially growing thermodynamically stable gallium nitride (GaN) nanorods via metal-organic chemical vapor deposition (MOCVD) by invoking a two-step self-limited growth (TSSLG) mechanism. This allows for growth of nanorods with excellent geometrical uniformity with no visible extended defects over a 100 mm sapphire (Al2O3) wafer. An ex-situ study of the growth morphology as a function of growth time for the two self-limiting steps elucidate the growth dynamics, which show that formation of an Ehrlich-Schwoebel barrier and preferential growth in the c-plane direction governs the growth process. This process allows monolithic formation of dimensionally uniform nanowires on templates with varying filling matrix patterns for a variety of novel electronic and optoelectronic applications. A color tunable phosphor-free white light LED with a coaxial architecture is fabricated as a demonstration of the applicability of these nanorods grown by TSSLG.

  3. Phonon processes in vertically aligned silicon nanowire arrays produced by low-cost all-solution galvanic displacement method

    NASA Astrophysics Data System (ADS)

    Banerjee, Debika; Trudeau, Charles; Gerlein, Luis Felipe; Cloutier, Sylvain G.

    2016-03-01

    The nanoscale engineering of silicon can significantly change its bulk optoelectronic properties to make it more favorable for device integration. Phonon process engineering is one way to enhance inter-band transitions in silicon's indirect band structure alignment. This paper demonstrates phonon localization at the tip of silicon nanowires fabricated by galvanic displacement using wet electroless chemical etching of a bulk silicon wafer. High-resolution Raman micro-spectroscopy reveals that such arrayed structures of silicon nanowires display phonon localization behaviors, which could help their integration into the future generations of nano-engineered silicon nanowire-based devices such as photodetectors and solar cells.

  4. Package Holds Five Monolithic Microwave Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Mysoor, Narayan R.; Decker, D. Richard; Olson, Hilding M.

    1996-01-01

    Packages protect and hold monolithic microwave integrated circuit (MMIC) chips while providing dc and radio-frequency (RF) electrical connections for chips undergoing development. Required to be compact, lightweight, and rugged. Designed to minimize undesired resonances, reflections, losses, and impedance mismatches.

  5. Development of oxide fibrous monolith systems.

    SciTech Connect

    Goretta, K. C.

    1999-03-02

    Fibrous monolithic ceramics generally have a cellular structure that consists of a strong cell surrounded by a weaker boundary phase [1-5]. Fibrous monoliths (FMs) are produced from powders by conventional ceramic fabrication techniques, such as extrusion [1,2]. When properly engineered, they exhibit fail gracefully [3-5]. Several compositions of ceramics and cermets have been processed successfully in fibrous monolithic form [4]. The most thoroughly investigated fibrous monolith consists of Si{sub 3}N{sub 4} cells and a BN cell-boundary phase [3-5]. Through appropriate selection of initial powders and extrusion and hot-pressing parameters, very tough final products have been produced. The resultant high toughness is due primarily to delamination during fracture along textured platelike BN grains. The primary objectives of our program are to develop: (1) Oxide-based FMs, including new systems with improved properties; (2) FMs that can be pressureless sintered rather than hot-pressed; (3) Techniques for continuous extrusion of FM filaments, including solid freeform fabrication (SFF) for net-shape fabrication of FMs; (4) Predictive micromechanical models for FM design and performance; and (5) Ties with industrial producers and users of FMs.

  6. Quasi-monolithic tunable optical resonator

    NASA Technical Reports Server (NTRS)

    Arbore, Mark (Inventor); Tapos, Francisc (Inventor)

    2003-01-01

    An optical resonator has a piezoelectric element attached to a quasi-monolithic structure. The quasi-monolithic structure defines an optical path. Mirrors attached to the structure deflect light along the optical path. The piezoelectric element controllably strains the quasi-monolithic structure to change a length of the optical path by about 1 micron. A first feedback loop coupled to the piezoelectric element provides fine control over the cavity length. The resonator may include a thermally actuated spacer attached to the cavity and a mirror attached to the spacer. The thermally actuated spacer adjusts the cavity length by up to about 20 microns. A second feedback loop coupled to the sensor and heater provides a coarse control over the cavity length. An alternative embodiment provides a quasi-monolithic optical parametric oscillator (OPO). This embodiment includes a non-linear optical element within the resonator cavity along the optical path. Such an OPO configuration is broadly tunable and capable of mode-hop free operation for periods of 24 hours or more.

  7. Constant capacitance in nanopores of carbon monoliths.

    PubMed

    García-Gómez, Alejandra; Moreno-Fernández, Gelines; Lobato, Belén; Centeno, Teresa A

    2015-06-28

    The results obtained for binder-free electrodes made of carbon monoliths with narrow micropore size distributions confirm that the specific capacitance in the electrolyte (C2H5)4NBF4/acetonitrile does not depend significantly on the micropore size and support the foregoing constant result of 0.094 ± 0.011 F m(-2).

  8. Field-effect electroluminescence in silicon nanocrystals.

    PubMed

    Walters, Robert J; Bourianoff, George I; Atwater, Harry A

    2005-02-01

    There is currently worldwide interest in developing silicon-based active optical components in order to leverage the infrastructure of silicon microelectronics technology for the fabrication of optoelectronic devices. Light emission in bulk silicon-based devices is constrained in wavelength to infrared emission, and in efficiency by the indirect bandgap of silicon. One promising strategy for overcoming these challenges is to make use of quantum-confined excitonic emission in silicon nanocrystals. A critical challenge for silicon nanocrystal devices based on nanocrystals embedded in silicon dioxide has been the development of a method for efficient electrical carrier injection. We report here a scheme for electrically pumping dense silicon nanocrystal arrays by a field-effect electroluminescence mechanism. In this excitation process, electrons and holes are both injected from the same semiconductor channel across a tunnelling barrier in a sequential programming process, in contrast to simultaneous carrier injection in conventional pn-junction light-emitting-diode structures. Light emission is strongly correlated with the injection of a second carrier into a nanocrystal that has been previously programmed with a charge of the opposite sign.

  9. Deposited silicon high-speed integrated electro-optic modulator.

    PubMed

    Preston, Kyle; Manipatruni, Sasikanth; Gondarenko, Alexander; Poitras, Carl B; Lipson, Michal

    2009-03-30

    We demonstrate a micrometer-scale electro-optic modulator operating at 2.5 Gbps and 10 dB extinction ratio that is fabricated entirely from deposited silicon. The polycrystalline silicon material exhibits properties that simultaneously enable high quality factor optical resonators and sub-nanosecond electrical carrier injection. We use an embedded p(+)n(-)n(+) diode to achieve optical modulation using the free carrier plasma dispersion effect. Active optical devices in a deposited microelectronic material can break the dependence on the traditional single layer silicon-on-insulator platform and help lead to monolithic large-scale integration of photonic networks on a microprocessor chip.

  10. Polyorganosilazane preceramic binder development for reaction bonded silicon nitride composites

    SciTech Connect

    Mohr, D.L.; Starr, T.L.

    1992-11-01

    This study has examined the use of two commercially available polyorganosilazanes for application as preceramic binders in a composite composed of silicon carbide fibers in a reaction bonded silicon nitride (RBSN) matrix. Ceramic monolithic and composite samples were produced. Density of monolithic and whisker reinforced RBSN samples containing the polysilazane binder was increased. Mercury intrusion porosimetry revealed a significant decrease in the pore sizes of samples containing a polyorganosilazane binder. Electron micrographs of samples containing the preceramic binder looked similar to control samples containing no precursor. Overall, incorporation of the polysilazane into monolithic and whisker reinforced samples resulted in significantly increased density and decreased porosity. Nitriding of the RBSN was slightly retarded by addition of the polysilazane binder. Samples with the preceramic binders contained increased contents of {alpha} versus {beta}-silicon nitride which may be due to interaction of hydrogen evolved from polysilazane pyrolysis with the nitriding process. Initial efforts to produce continuous fiber reinforced composites via this method have not realized the same improvements in density and porosity which have been observed for monolithic and whisker reinforced samples. Further, the addition of perceramic binder resulted in a more brittle fracture morphology as compared to similar composites made without the binder.

  11. Polyorganosilazane preceramic binder development for reaction bonded silicon nitride composites

    SciTech Connect

    Mohr, D.L.; Starr, T.L. )

    1992-11-01

    This study has examined the use of two commercially available polyorganosilazanes for application as preceramic binders in a composite composed of silicon carbide fibers in a reaction bonded silicon nitride (RBSN) matrix. Ceramic monolithic and composite samples were produced. Density of monolithic and whisker reinforced RBSN samples containing the polysilazane binder was increased. Mercury intrusion porosimetry revealed a significant decrease in the pore sizes of samples containing a polyorganosilazane binder. Electron micrographs of samples containing the preceramic binder looked similar to control samples containing no precursor. Overall, incorporation of the polysilazane into monolithic and whisker reinforced samples resulted in significantly increased density and decreased porosity. Nitriding of the RBSN was slightly retarded by addition of the polysilazane binder. Samples with the preceramic binders contained increased contents of [alpha] versus [beta]-silicon nitride which may be due to interaction of hydrogen evolved from polysilazane pyrolysis with the nitriding process. Initial efforts to produce continuous fiber reinforced composites via this method have not realized the same improvements in density and porosity which have been observed for monolithic and whisker reinforced samples. Further, the addition of perceramic binder resulted in a more brittle fracture morphology as compared to similar composites made without the binder.

  12. Optoelectronic hit/miss transform for screening cervical smear slides

    NASA Astrophysics Data System (ADS)

    Narayanswamy, R.; Turner, R. M.; McKnight, D. J.; Johnson, K. M.; Sharpe, J. P.

    1995-06-01

    An optoelectronic morphological processor for detecting regions of interest (abnormal cells) on a cervical smear slide using the hit/miss transform is presented. Computer simulation of the algorithm tested on 184 Pap-smear images provided 95% detection and 5% false alarm. An optoelectronic implementation of the hit/miss transform is presented, along with preliminary experimental results.

  13. Optoelectronic sensors for subsea oil and gas production

    NASA Astrophysics Data System (ADS)

    McStay, D.; Shiach, G.; Nolan, A.; McAvoy, S.

    2007-07-01

    The potential for optoelectronic sensor technology to provide the monitoring and control systems required for advanced subsea hydrocarbon production management is described. The utilisation of optoelectronic sensor technology to produce a new class of subsea Christmas Tree with in-built enhanced production monitoring and control systems as well as effective environmental monitoring systems is reported.

  14. Six Classes of Diffraction-Based Optoelectronic Instruments

    NASA Technical Reports Server (NTRS)

    Spremo, Stevan; Fuhr, Peter; Schipper, John

    2003-01-01

    Six classes of diffraction-based optoelectronic instruments have been invented as means for wavelength-based processing of light. One family of anticipated applications lies in scientific instrumentation for studying chemical and physical reactions that affect and/or are affected differently by light of different wavelengths or different combinations of wavelengths. Another family of anticipated applications lies in optoelectronic communication systems.

  15. Electrically conductive and optically active porous silicon nanowires.

    PubMed

    Qu, Yongquan; Liao, Lei; Li, Yujing; Zhang, Hua; Huang, Yu; Duan, Xiangfeng

    2009-12-01

    We report the synthesis of vertical silicon nanowire array through a two-step metal-assisted chemical etching of highly doped n-type silicon (100) wafers in a solution of hydrofluoric acid and hydrogen peroxide. The morphology of the as-grown silicon nanowires is tunable from solid nonporous nanowires, nonporous/nanoporous core/shell nanowires, to entirely nanoporous nanowires by controlling the hydrogen peroxide concentration in the etching solution. The porous silicon nanowires retain the single crystalline structure and crystallographic orientation of the starting silicon wafer and are electrically conductive and optically active with visible photoluminescence. The combination of electronic and optical properties in the porous silicon nanowires may provide a platform for novel optoelectronic devices for energy harvesting, conversion, and biosensing.

  16. A Novel Nanofabrication Technique of Silicon-Based Nanostructures.

    PubMed

    Meng, Lingkuan; He, Xiaobin; Gao, Jianfeng; Li, Junjie; Wei, Yayi; Yan, Jiang

    2016-12-01

    A novel nanofabrication technique which can produce highly controlled silicon-based nanostructures in wafer scale has been proposed using a simple amorphous silicon (α-Si) material as an etch mask. SiO2 nanostructures directly fabricated can serve as nanotemplates to transfer into the underlying substrates such as silicon, germanium, transistor gate, or other dielectric materials to form electrically functional nanostructures and devices. In this paper, two typical silicon-based nanostructures such as nanoline and nanofin have been successfully fabricated by this technique, demonstrating excellent etch performance. In addition, silicon nanostructures fabricated above can be further trimmed to less than 10 nm by combing with assisted post-treatment methods. The novel nanofabrication technique will be expected a new emerging technology with low process complexity and good compatibility with existing silicon integrated circuit and is an important step towards the easy fabrication of a wide variety of nanoelectronics, biosensors, and optoelectronic devices.

  17. Plasmonic engineering of spontaneous emission from silicon nanocrystals

    PubMed Central

    Goffard, Julie; Gérard, Davy; Miska, Patrice; Baudrion, Anne-Laure; Deturche, Régis; Plain, Jérôme

    2013-01-01

    Silicon nanocrystals offer huge advantages compared to other semi-conductor quantum dots as they are made from an abundant, non-toxic material and are compatible with silicon devices. Besides, among a wealth of extraordinary properties ranging from catalysis to nanomedicine, metal nanoparticles are known to increase the radiative emission rate of semiconductor quantum dots. Here, we use gold nanoparticles to accelerate the emission of silicon nanocrystals. The resulting integrated hybrid emitter is 5-fold brighter than bare silicon nanocrystals. We also propose an in-depth analysis highlighting the role of the different physical parameters in the photoluminescence enhancement phenomenon. This result has important implications for the practical use of silicon nanocrystals in optoelectronic devices, for instance for the design of efficient down-shifting devices that could be integrated within future silicon solar cells. PMID:24037020

  18. A Novel Nanofabrication Technique of Silicon-Based Nanostructures

    NASA Astrophysics Data System (ADS)

    Meng, Lingkuan; He, Xiaobin; Gao, Jianfeng; Li, Junjie; Wei, Yayi; Yan, Jiang

    2016-11-01

    A novel nanofabrication technique which can produce highly controlled silicon-based nanostructures in wafer scale has been proposed using a simple amorphous silicon (α-Si) material as an etch mask. SiO2 nanostructures directly fabricated can serve as nanotemplates to transfer into the underlying substrates such as silicon, germanium, transistor gate, or other dielectric materials to form electrically functional nanostructures and devices. In this paper, two typical silicon-based nanostructures such as nanoline and nanofin have been successfully fabricated by this technique, demonstrating excellent etch performance. In addition, silicon nanostructures fabricated above can be further trimmed to less than 10 nm by combing with assisted post-treatment methods. The novel nanofabrication technique will be expected a new emerging technology with low process complexity and good compatibility with existing silicon integrated circuit and is an important step towards the easy fabrication of a wide variety of nanoelectronics, biosensors, and optoelectronic devices.

  19. Method for forming silicon on a glass substrate

    DOEpatents

    McCarthy, Anthony M.

    1995-01-01

    A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

  20. Ultralight amorphous silicon alloy photovoltaic modules for space applications

    NASA Technical Reports Server (NTRS)

    Hanak, J. J.; Chen, Englade; Fulton, C.; Myatt, A.; Woodyard, J. R.

    1987-01-01

    Ultralight and ultrathin, flexible, rollup monolithic PV modules have been developed consisting of multijunction, amorphous silicon alloys for either terrestrial or aerospace applications. The rate of progress in increasing conversion efficiency of stable multijunction and multigap PV cells indicates that arrays of these modules can be available for NASA's high power systems in the 1990's. Because of the extremely light module weight and the highly automated process of manufacture, the monolithic a-Si alloy arrays are expected to be strongly competitive with other systems for use in NASA's space station or in other large aerospace applications.

  1. Adhesion of functional layer on polymeric substrates for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Amendola, E.; Cammarano, A.; Pezzuto, M.; Acierno, D.

    2009-06-01

    The use of plastic film substrates for organic electronic devices promises to enable new applications, such as flexible displays. Plastic substrates have several distinct advantages, such as ruggedness, robustness, ultra lightness, conformability and impact resistance over glass substrates, which are primarily used in flat panel displays (FPDs) today. However, high transparency, proper surface roughness, low gas permeability and high transparent electrode conductivity of the plastic substrate are required for commercial applications. Polyesters, both amorphous and semicrystalline, are a promising class of commercial polymer for optoelectronic applications. Surface modification of polyester films was performed via chemical solution determining hydrolysis or oxidation. Hydrolysis was carried out by means of sodium hydroxide solution and oxidation by using standard clean 1 (SC-1) of RCA procedure [1]. For this work we have used commercial polymer films of 100μm in thickness: AryLite [2], supplied by Ferrania Imaging Technologies S.p.A. and characterised by very high glass transition temperature, Mylar (Polyethylene Terephthalate PET) and Teonex (Polyethylene Naphthalate PEN) both supplied by Dupont. More over, a bioriented and semicrystalline PET have been used. The aim of this study is modifying the polymer surface to improve the adhesion between organic-inorganic layer. It was found that the NaOH and SC-1 treatment cause a decrease of contact angles. In the present study we have deposited a thin films of amorphous hydrogenated silicon (a-Si:H) and its oxide (SiO2) on a new high temperature polymer substrate, AryLite, by plasma enhanced chemical vapour deposition (PECVD) [3], with a radio frequency plasma system.

  2. Assessments of Fracture Toughness of Monolithic Ceramics-SEPB Versus SEVNB Methods

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Gyekenyesi, John P.

    2006-01-01

    Fracture toughness of a total of 13 advanced monolithic ceramics including silicon nitrides, silicon carbide, aluminas, and glass ceramic was determined at ambient temperature by using both single edge precracked beam (SEPB) and single edge v-notched beam (SEVNB) methods. Relatively good agreement in fracture toughness between the two methods was observed for advanced ceramics with flat R-curves; whereas, poor agreement in fracture toughness was seen for materials with rising R-curves. The discrepancy in fracture toughness between the two methods was due to stable crack growth with crack closure forces acting in the wake region of cracks even in SEVNB test specimens. The effect of discrepancy in fracture toughness was analyzed in terms of microstructural feature (grain size and shape), toughening exponent in R-curve, and stable crack growth determined using back-face strain gaging.

  3. Shallow halogen vacancies in halide optoelectronic materials

    SciTech Connect

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  4. Optoelectronic determination of insect presence in fruit

    NASA Astrophysics Data System (ADS)

    Shrestha, Bim P.; Guyer, Daniel E.; Ariana, Diwan P.

    2004-03-01

    Opto-electronic methods represent a potential to identify the presence of insect activities on or within agricultural commodities. Such measurements may detect actual insect presence or indirect secondary changes in the product resulting from past or present insect activities. Preliminary imaging studies have demonstrated some unique spectral characteristics of insect larvae on cherries. A detailed study on spectral characteristics of healthy and infested tart cherry tissue with and without larvae (Plum Curculio) was conducted for reflectance, transmittance and interactance modes for each of UV and visible/NIR light sources. The intensity of transmitted UV signals through the tart cherry was found to be weak; however, the spectral properties of UV light in reflectance mode has revealed some typical characteristics of larvae on healthy and infested tissue. The larvae on tissue were found to exhibit UV induced fluorescence signals in the range of 400-700 nm. Multi spectral imaging of the halved tart cherry has also corroborated this particular behavior of plum curculio larvae. The gray scale subtraction between corresponding pixels in these multi-spectral images has helped to locate the larvae precisely on the tart cherry tissue background, which otherwise was inseparable. The spectral characteristics of visible/NIR energy in transmittance and reflectance mode are capable of estimating the secondary effect of infestation in tart cherry tissue. The study has shown the shifting in peaks of reflected and transmitted signals from healthy and infested tissues and coincides with the concept of browning of tissue at cell level as a process of infestation. Interactance study has been carried out to study the possibility of coupling opto-electronic devices with the existing pitting process. The shifting of peaks has been observed for the normalized intensity of healthy and infested tissues. The study has been able to establish the inherent spectral characteristic of these

  5. Silicon-based silicon–germanium–tin heterostructure photonics

    PubMed Central

    Soref, Richard

    2014-01-01

    The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479

  6. FIBROUS MONOLITH WEAR RESISTANT COMPONENTS FOR THE MINING INDUSTRY

    SciTech Connect

    Mark J. Rigali

    2001-10-01

    Published mechanical and thermal properties data on a variety of materials was gathered, with focus on materials that have potential with respect to developing wear resistant and damage tolerant composite for mining industry applications. Preliminary core materials of interest include but are not limited to: Diamond, Tungsten Carbide and Cemented Tungsten Carbides, Carbides of Boron, Silicon, Titanium and Aluminum, Diboride of Titanium and Aluminum, Nitrides of Aluminum, Silicon, Titanium, and Boron, Aluminum Oxide, Tungsten, Titanium, Iron, Cobalt and Metal Alloys. Preliminary boundary materials of interest include but are not limited to: W metal, WC-Co, W-Co, WFeNi, and Mo metal and alloys. Several FM test coupons were fabricated with various compositions using the above listed materials. These coupons were consolidated to varying degrees by uniaxial hot pressing, then cut and ground to expose the FM cell structure. One promising system, WC-Co core and WFeNi boundary, was consolidated to 97% of theoretical density, and demonstrates excellent hardness. Data on standard mechanical tests was gathered, and tests will begin on the consolidated test coupons during the upcoming reporting period. The program statements of work for ACR Inc. and its subcontractors, as well as the final contract negotiations, were finalized during the current reporting period. The program start date was February 22nd, 2001. In addition to the current subcontractors, Kennametal Inc., a major manufacturer of cutting tools and wear resistant tooling for the mining industry, expressed considerable interest in ACR's Fibrous Monolith composites for both machine and mining applications. At the request of Kennametal, ARC Inc fabricated and delivered several Fibrous Monolith coupons and components for testing and evaluation in the mining and machine tool applications. Additional samples of Diamond/Tungsten Carbide-6%Cobalt Fibrous Monolith were fabricated and delivered for testing Kennametal's Rapid

  7. Implantable optoelectronic probes for in vivo optogenetics.

    PubMed

    Iseri, Ege; Kuzum, Duygu

    2017-02-15

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  8. Implantable optoelectronic probes for in vivo optogenetics

    NASA Astrophysics Data System (ADS)

    Iseri, Ege; Kuzum, Duygu

    2017-06-01

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  9. Optoelectronic date acquisition system based on FPGA

    NASA Astrophysics Data System (ADS)

    Li, Xin; Liu, Chunyang; Song, De; Tong, Zhiguo; Liu, Xiangqing

    2015-11-01

    An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.

  10. Assembling silver nanowires using optoelectronic tweezers

    NASA Astrophysics Data System (ADS)

    Zhang, Shuailong; Cooper, Jonathan M.; Neale, Steve L.

    2016-03-01

    Light patterned dielectrophoresis or optoelectronic tweezers (OET) has been proved to be an effective micromanipulation technology for cell separation, cell sorting and control of cell interactions. Apart from being useful for cell biology experiments, the capability of moving small objects accurately also makes OET an attractive technology for other micromanipulation applications. In particular, OET has the potential to be used for efficiently and accurately assembling small optoelectronic/electronic components into circuits. This approach could produce a step change in the size of the smallest components that are routinely assembled; down from the current smallest standard component size of 400×200 μm (0402 metric) to components a few microns across and even nanostructured components. In this work, we have demonstrated the use of OET to manipulate conductive silver nanowires into different patterns. The silver nanowires (typical diameter: 60 nm; typical length: 10 μm) were suspended in a 15 mS/m solution of KCL in water and manipulated by positive dielectrophoresis force generated by OET. A proof-of-concept demonstration was also made to prove the feasibility of using OET to manipulate silver nanowires to form a 150-μm-long conductive path between two isolated electrodes. It can be seen that the resistance between two electrodes was effectively brought down to around 700 Ω after the silver nanowires were assembled and the solution evaporated. Future work in this area will focus on increasing the conductivity of these tracks, encapsulating the assembled silver nanowires to prevent silver oxidation and provide mechanical protection, which can be achieved via 3D printing and inkjet printing technology.

  11. Integrated NEMS and optoelectronics for sensor applications.

    SciTech Connect

    Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R.; Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade; Okandan, Murat; Peterson, Kenneth Allen

    2008-01-01

    This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

  12. Monolithic mode-locked quantum dot lasers

    NASA Astrophysics Data System (ADS)

    Penty, R. V.; Thompson, M. G.; White, I. H.

    2008-02-01

    Monolithic mode-locked laser diodes based on QD active regions are regarded as potentially suitable for a large range of photonic applications due to their compactness, mechanical stability and robustness, high potential repetition rates and low potential jitter. Their inherent properties, such as high differential gain, low chirp and fast saturable absorption have led to demonstration of improved performance over their QW equivalents. Low background loss and the relatively long lengths of quantum dot laser devices also have encouraged studies of mode-locking at repetition rates previously not explored in monolithic devices. Applications include biomedicine, high-speed data transmission, clock signal generation and electro-optic sampling. This paper reviews some of the work at Cambridge on the realization of such devices.

  13. Monolithic Flexure Pre-Stressed Ultrasonic Horns

    NASA Technical Reports Server (NTRS)

    Sherrit, Stewart (Inventor); Bao, Xiaoqi (Inventor); Badescu, Mircea (Inventor); Bar-Cohen, Yoseph (Inventor); Allen, Phillip Grant (Inventor)

    2016-01-01

    A monolithic ultrasonic horn where the horn, backing, and pre-stress structures are combined in a single monolithic piece is disclosed. Pre-stress is applied by external flexure structures. The provision of the external flexures has numerous advantages including the elimination of the need for a pre-stress bolt. The removal of the pre-stress bolt eliminates potential internal electric discharge points in the actuator. In addition, it reduces the chances of mechanical failure in the actuator stacks that result from the free surface in the hole of conventional ring stacks. In addition, the removal of the stress bolt and the corresponding reduction in the overall number of parts reduces the overall complexity of the resulting ultrasonic horn actuator and simplifies the ease of the design, fabrication and integration of the actuator of the present invention into other structures.

  14. Monolithic Flexure Pre-Stressed Ultrasonic Horns

    NASA Technical Reports Server (NTRS)

    Sherrit, Stewart (Inventor); Bao, Xiaoqi (Inventor); Badescu, Mircea (Inventor); Bar-Cohen, Yoseph (Inventor); Allen, Phillip Grant (Inventor)

    2015-01-01

    A monolithic ultrasonic horn where the horn, backing, and pre-stress structures are combined in a single monolithic piece is disclosed. Pre-stress is applied by external flexure structures. The provision of the external flexures has numerous advantages including the elimination of the need for a pre-stress bolt. The removal of the pre-stress bolt eliminates potential internal electric discharge points in the actuator. In addition, it reduces the chances of mechanical failure in the actuator stacks that result from the free surface in the hole of conventional ring stacks. In addition, the removal of the stress bolt and the corresponding reduction in the overall number of parts reduces the overall complexity of the resulting ultrasonic horn actuator and simplifies the ease of the design, fabrication and integration of the actuator of the present invention into other structures.

  15. Comparison of soil-monolith extraction techniques

    NASA Astrophysics Data System (ADS)

    Meissner, R.; Rupp, H.; Weller, U.; Vogel, H.-J.

    2009-04-01

    In the international literature the term „lysimeter" is used for different objectives, e.g. suction cups, fluxmeters, etc. According to our understanding it belongs to the direct methods to measure water and solute fluxes in soil. Depending on the scientific task the shape and dimensions of the lysimeter as well as the type of filling (disturbed or undisturbed) and the specific instrumentation can be different. In any case where water dynamics or solute transport in natural soil is considered, lysimeters should be filled with 'undisturbed' monoliths which are large enough to contain the small scale heterogeneity of a site since flow and transport is highly sensitive to soil structure. Furthermore, lysimeters with vegetation should represent the natural crop inventory and the maximum root penetration depth should be taken into account. The aim of this contribution is to give an overview about different methods for obtaining undisturbed soil monoliths, in particular about i) techniques for the vertical and ii) for the horizontal extraction and iii) to evaluate the most frequently used procedures based on X-ray tomography images. Minimal disturbance of the soil monolith during extraction and subsequence filling of the lysimeter vessel is of critical importance for establishing flow and transport conditions corresponding approximately to natural field conditions. In the past, several methods were used to extract and fill lysimeter vessels vertically - including hand digging, employing sets of trihedral scaffold with lifting blocks and ballast, or using heavy duty excavators, which could shear and cut large blocks of soil. More recently, technologies have been developed to extract cylindrical soil monoliths by using ramming equipment or screw presses. One of the great disadvantages of the mentioned methods is the compaction or settling of soil that occurs during the "hammering" or "pressing". For this reason a new technology was developed, which cuts the outline of

  16. Method for making monolithic metal oxide aerogels

    DOEpatents

    Droege, M.W.; Coronado, P.R.; Hair, L.M.

    1995-03-07

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The present invention is especially advantageous for making metal oxides other than silica that are prone to forming opaque, cracked aerogels. 6 figs.

  17. Method for making monolithic metal oxide aerogels

    DOEpatents

    Droege, Michael W.; Coronado, Paul R.; Hair, Lucy M.

    1995-01-01

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The present invention is especially advantageous for making metal oxides other than silica that are prone to forming opaque, cracked aerogels.

  18. Ultralow Noise Monolithic Quantum Dot Photonic Oscillators

    DTIC Science & Technology

    2013-10-28

    HBCU/MI) ULTRALOW NOISE MONOLITHIC QUANTUM DOT PHOTONIC OSCILLATORS LUKE LESTER UNIVERSITY OF NEW MEXICO 10/28/2013 Final Report DISTRIBUTION A...New Mexico , Albuquerque, NM 87131-0001 Air Force Office of Scientific Research 875 N. Randolph St., Rm 3112 Arlington, VA 22203-1954 patricia.bell...Report 06/01/2010 - 05/31/2013 Professor Luke F. Lester, PI, University of New Mexico Contact address: Center for High Technology Materials

  19. Monolithically integrated interferometer for optical displacement measurement

    NASA Astrophysics Data System (ADS)

    Hofstetter, Daniel; Zappe, Hans P.

    1996-01-01

    We discuss the fabrication of a monolithically integrated optical displacement sensors using III-V semiconductor technology. The device is configured as a Michelson interferometer and consists of a distributed Bragg reflector laser, a photodetector and waveguides forming a directional coupler. Using this interferometer, displacements in the 100 nm range could be measured at distances of up to 45 cm. We present fabrication, device results and characterization of the completed interferometer, problems, limitations and future applications will also be discussed.

  20. Monolithic solid oxide fuel cell development

    NASA Technical Reports Server (NTRS)

    Myles, K. M.; Mcpheeters, C. C.

    1989-01-01

    The feasibility of the monolithic solid oxide fuel cell (MSOFC) concept has been proven, and the performance has been dramatically improved. The differences in thermal expansion coefficients and firing shrinkages among the fuel cell materials have been minimized, thus allowing successful fabrication of the MSOFC with few defects. The MSOFC shows excellent promise for development into a practical power source for many applications from stationary power, to automobile propulsion, to space pulsed power.

  1. Update On Monolithic Fuel Fabrication Development

    SciTech Connect

    C. R Clark; J. M. Wight; G. C. Knighton; G. A. Moore; J. F. Jue

    2005-11-01

    Efforts to develop a viable monolithic research reactor fuel plate have continued at Idaho National Laboratory. These efforts have concentrated on both fabrication process refinement and scale-up to produce full sized fuel plates. Advancements have been made in the production of U-Mo foil including full sized foils. Progress has also been made in the friction stir welding and transient liquid phase bonding fabrication processes resulting in better bonding, more stable processes and the ability to fabricate larger fuel plates.

  2. Monolithic Integration of Semiconductor and Superconductor Components

    DTIC Science & Technology

    1992-03-31

    change the device performance at room temperature . The monolithic bipolar transistors will be fabricated by Honeywell’s MICRO SWITCH Division of...subsequent processing run funded by Honeywell which was completed in December, 1991. Task 2.5: Device Evaluation Room temperature resistance measurements were...dc bias current of only 1 pA was measured at a substrate temperature of 73 K in a microbolometer occupying a 125 pm x 125 pm area. In thermal imaging

  3. Fluidized Bed Steam Reformer (FBSR) monolith formation

    SciTech Connect

    Jantzen, C.M.

    2007-07-01

    Fluidized Bed Steam Reforming (FBSR) is being considered as an alternative technology for the immobilization of a wide variety of aqueous high sodium containing radioactive wastes at various DOE facilities in the United States. The addition of clay, charcoal, and a catalyst as co-reactants converts aqueous Low Activity Wastes (LAW) to a granular or 'mineralized' waste form while converting organic components to CO{sub 2} and steam, and nitrate/nitrite components, if any, to N{sub 2}. The waste form produced is a multiphase mineral assemblage of Na-Al-Si (NAS) feldspathoid minerals with cage-like structures that atomically bond radionuclides like Tc-99 and anions such as SO{sub 4}, I, F, and Cl. The granular product has been shown to be as durable as LAW glass. Shallow land burial requires that the mineralized waste form be able to sustain the weight of soil overburden and potential intrusion by future generations. The strength requirement necessitates binding the granular product into a monolith. FBSR mineral products were formulated into a variety of monoliths including various cements, Ceramicrete, and hydro-ceramics. All but one of the nine monoliths tested met the <2 g/m{sup 2} durability specification for Na and Re (simulant for Tc-99) when tested using the Product Consistency Test (PCT; ASTM C1285). Of the nine monoliths tested the cements produced with 80-87 wt% FBSR product, the Ceramicrete, and the hydro-ceramic produced with 83.3 wt% FBSR product, met the compressive strength and durability requirements for an LAW waste form. (authors)

  4. FLUIDIZED BED STEAM REFORMER MONOLITH FORMATION

    SciTech Connect

    Jantzen, C

    2006-12-22

    Fluidized Bed Steam Reforming (FBSR) is being considered as an alternative technology for the immobilization of a wide variety of aqueous high sodium containing radioactive wastes at various DOE facilities in the United States. The addition of clay, charcoal, and a catalyst as co-reactants converts aqueous Low Activity Wastes (LAW) to a granular or ''mineralized'' waste form while converting organic components to CO{sub 2} and steam, and nitrate/nitrite components, if any, to N{sub 2}. The waste form produced is a multiphase mineral assemblage of Na-Al-Si (NAS) feldspathoid minerals with cage-like structures that atomically bond radionuclides like Tc-99 and anions such as SO{sub 4}, I, F, and Cl. The granular product has been shown to be as durable as LAW glass. Shallow land burial requires that the mineralized waste form be able to sustain the weight of soil overburden and potential intrusion by future generations. The strength requirement necessitates binding the granular product into a monolith. FBSR mineral products were formulated into a variety of monoliths including various cements, Ceramicrete, and hydroceramics. All but one of the nine monoliths tested met the <2g/m{sup 2} durability specification for Na and Re (simulant for Tc-99) when tested using the Product Consistency Test (PCT; ASTM C1285). Of the nine monoliths tested the cements produced with 80-87 wt% FBSR product, the Ceramicrete, and the hydroceramic produced with 83.3 wt% FBSR product, met the compressive strength and durability requirements for an LAW waste form.

  5. Method for making monolithic metal oxide aerogels

    DOEpatents

    Coronado, Paul R.

    1999-01-01

    Transparent, monolithic metal oxide aerogels of varying densities are produced using a method in which a metal alkoxide solution and a catalyst solution are prepared separately and reacted. The resulting hydrolyzed-condensed colloidal solution is gelled, and the wet gel is contained within a sealed, but gas permeable, containment vessel during supercritical extraction of the solvent. The containment vessel is enclosed within an aqueous atmosphere that is above the supercritical temperature and pressure of the solvent of the metal alkoxide solution.

  6. Nanoporous Carbon Monoliths with Tunable Thermal Insulation and Mechanical Properties.

    PubMed

    Wang, Xiaopeng; Chen, Fenghua; Luo, Zhenhua; Li, Hao; Zhao, Tong

    2016-01-01

    In this work, nanoscale porous carbon monoliths, with excellent compressive strength and thermal insulation, were obtained with a simple method of carbonizing cured phenol-formaldehyde resin/poly(methyl methacrylate) blends. Apparent density, pore size and morphology of the carbon monoliths were tailored by changing the composition, curing process and carbonization temperature. The continuous nanopores played a key role in enhancing mechanical and thermal performance of the carbon materials. When PMMA concentration was 25%, apparent density and thermal conductivity of the nanoporous carbonaceous monoliths were obtained as low as 1.07 g · cm⁻³ and 0.42 W/(m · K), decreasing by 29.4% and 35.4% than that of carbonaceous monoliths obtained from pure PF; while compressive strength of the nanoporous carbonaceous monoliths was as high as 34 MPa, which was improved over five times than that of pure PF carbon monoliths.

  7. FRACTURE-RESISTANT MONOLITHIC DENTAL CROWNS

    PubMed Central

    Zhang, Yu; Mai, Zhisong; Barani, Amir; Bush, Mark; Lawn, Brian

    2016-01-01

    Objective To quantify the splitting resistance of monolithic zirconia, lithium disilicate and nanoparticle-composite dental crowns. Methods Fracture experiments were conducted on anatomically-correct monolithic crown structures cemented to standard dental composite dies, by axial loading of a hard sphere placed between the cusps. The structures were observed in situ during fracture testing, and critical loads to split the structures were measured. Extended finite element modeling (XFEM), with provision for step-by-step extension of embedded cracks, was employed to simulate full failure evolution. Results Experimental measurements and XFEM predictions were self consistent within data scatter. In conjunction with a fracture mechanics equation for critical splitting load, the data were used to predict load-sustaining capacity for crowns on actual dentin substrates and for loading with a sphere of different size. Stages of crack propagation within the crown and support substrate were quantified. Zirconia crowns showed the highest fracture loads, lithium disilicate intermediate, and dental nanocomposite lowest. Dental nanocomposite crowns have comparable fracture resistance to natural enamel. Significance The results confirm that monolithic crowns are able to sustain high bite forces. The analysis indicates what material and geometrical properties are important in optimizing crown performance and longevity. PMID:26792623

  8. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    SciTech Connect

    Akhter, Perveen; Huang, Mengbing Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-03-28

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics.

  9. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    NASA Astrophysics Data System (ADS)

    Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-03-01

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ˜50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3-10% lower or higher than that of silicon for wavelengths below or beyond ˜815-900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10-100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics.

  10. Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

    PubMed

    Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

    2017-12-01

    The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

  11. Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells

    NASA Astrophysics Data System (ADS)

    Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

    2017-01-01

    The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

  12. Rare earth doped III-nitride semiconductors for spintronic and optoelectronic applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Palai, Ratnakar

    2016-10-01

    Since last four decades the information and communication technologies are relying on the semiconductor materials. Currently a great deal of attention is being focused on adding spin degree-of-freedom into semiconductor to create a new area of solid-state electronics, called spintronics. In spintronics not only the current but also its spin state is controlled. Such materials need to be good semiconductors for easy integration in typical integrated circuits with high sensitivity to the spin orientation, especially room temperature ferromagnetism being an important desirable property. GaN is considered to be the most important semiconductor after silicon. It is widely used for the production of green, blue, UV, and white LEDs in full color displays, traffic lights, automotive lightings, and general room lighting using white LEDs. GaN-based systems also show promise for microwave and high power electronics intended for radar, satellite, wireless base stations and spintronic applications. Rare earth (Yb, Eu, Er, and Tm) doped GaN shows many interesting optoelectronic and magnetoptic properties e. g. sharp emission from UV through visible to IR, radiation hardness, and ferromagnetism. The talk will be focused on fabrication, optoelectronic (photoluminescence, cathodeluminescence, magnetic, and x-ray photoelectron spectroscopy) properties of some rare earth doped GaN and InGaN semiconductor nanostructures grown by plasma assisted molecular beam epitaxy (MBE) and future applications.

  13. Less common applications of monoliths III. Gas chromatography

    PubMed Central

    Svec, Frantisek; Kurganov, Alexander A.

    2008-01-01

    Porous polymer monoliths emerged about two decades ago. Despite this short time, they are finding applications in a variety of fields. In addition to the most common and certainly best known use of this new category of porous media as stationary phases in liquid chromatography, monolithic materials also found their applications in other areas. This review article focuses on monoliths in capillaries designed for separations in gas chromatography. PMID:17645884

  14. Nanocellulose-based Translucent Diffuser for Optoelectronic Device Applications with Dramatic Improvement of Light Coupling.

    PubMed

    Wu, Wei; Tassi, Nancy G; Zhu, Hongli; Fang, Zhiqiang; Hu, Liangbing

    2015-12-09

    Nanocellulose is a biogenerated and biorenewable organic material. Using a process based on 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO)/NaClO/NaBr system, a highly translucent and light-diffusive film consisting of many layers of nanocellulose fibers and wood pulp microfibers was made. The film demonstrates a combination of large optical transmittance of ∼90% and tunable diffuse transmission of up to ∼78% across the visible and near-infrared spectra. The detailed characterizations of the film indicate the combination of high optical transmittance and haze is due to the film's large packing density and microstructured surface. The superior optical properties make the film a translucent light diffuser and applicable for improving the efficiencies of optoelectronic devices such as thin-film silicon solar cells and organic light-emitting devices.

  15. Monolithic Lumped Element Integrated Circuit (M2LEIC) Transistors.

    DTIC Science & Technology

    INTEGRATED CIRCUITS, *MONOLITHIC STRUCTURES(ELECTRONICS), *TRANSISTORS, CHIPS(ELECTRONICS), FABRICATION, EPITAXIAL GROWTH, ULTRAHIGH FREQUENCY, POLYSILICONS, PHOTOLITHOGRAPHY, RADIOFREQUENCY POWER, IMPEDANCE MATCHING .

  16. Consolidation and densification methods for fibrous monolith processing

    SciTech Connect

    Sutaria, Manish P.; Rigali, Mark J.; Cipriani, Ronald A.; Artz, Gregory J.; Mulligan, Anthony C.

    2004-05-25

    Methods for consolidation and densification of fibrous monolith composite structures are provided. Consolidation and densification of two- and three-dimensional fibrous monolith components having complex geometries can be achieved by pressureless sintering. The fibrous monolith composites are formed from filaments having at least a first material composition generally surrounded by a second material composition. The composites are sintered in an inert gas or nitrogen gas at a pressure of no more than about 30 psi to provide consolidated and densified fibrous monolith composites.

  17. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    SciTech Connect

    Du, Mao -Hua; Shi, Hongliang; Ming, Wenmei

    2016-03-29

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns2 ions (e.g., Tl+, Pb2+, and Bi3+). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi3+, which is also an ns2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at

  18. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    DOE PAGES

    Du, Mao -Hua; Shi, Hongliang; Ming, Wenmei

    2016-03-29

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns2 ions (e.g., Tl+, Pb2+, and Bi3+). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi3+, which is also an ns2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of bandmore » gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. As a result, defect calculations indeed show that

  19. Magnetometer Based on Optoelectronic Microwave Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Strekalov, Dmitry; Matsko, Andrey

    2005-01-01

    proposed instrument, intended mainly for use as a magnetometer, would include an optoelectronic oscillator (OEO) stabilized by an atomic cell that could play the role of a magnetically tunable microwave filter. The microwave frequency would vary with the magnetic field in the cell, thereby providing an indication of the magnetic field. The proposed magnetometer would offer a combination of high accuracy and high sensitivity, characterized by flux densities of less than a picotesla. In comparison with prior magnetometers, the proposed magnetometer could, in principle, be constructed as a compact, lightweight instrument: It could fit into a package of about 10 by 10 by 10 cm and would have a mass <0.5 kg. As described in several prior NASA Tech Briefs articles, an OEO is a hybrid of photonic and electronic components that generates highly spectrally pure microwave radiation, and optical radiation modulated by the microwave radiation, through direct conversion between laser light and microwave radiation in an optoelectronic feedback loop. As used here, "atomic cell" signifies a cell containing a vapor, the constituent atoms of which can be made to undergo transitions between quantum states, denoted hyperfine levels, when excited by light in a suitable wavelength range. The laser light must be in this range. The energy difference between the hyperfine levels defines the microwave frequency. In the proposed instrument (see figure), light from a laser would be introduced into an electro-optical modulator (EOM). Amplitude-modulated light from the exit port of the EOM would pass through a fiber-optic splitter having two output branches. The light in one branch would be sent through an atomic cell to a photodiode. The light in the other branch would constitute the microwave-modulated optical output. Part of the light leaving the atomic cell could also be used to stabilize the laser at a frequency in the vicinity of the desired hyperfine or other quantum transition. The

  20. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Ming, Wenmei; Du, Mao-Hua

    2016-03-01

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of n s2 ions (e.g., T l+ , P b2 + , and B i3 + ). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain B i3 + , which is also an n s2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected B i3 + based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n -BiSeBr, p -BiSI, and p -BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p -type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. Defect calculations indeed show that the

  1. Integration of optoelectronic technologies for chip-to- chip interconnections and parallel pipeline processing

    NASA Astrophysics Data System (ADS)

    Wu, Jenming

    Digital information services such as multimedia systems and data communications require the processing and transfer of tremendous amount of data. These data need to be stored, accessed and delivered efficiently and reliably at high speed for various user applications. This represents a great challenge for current electronic systems. Electronics is effective in providing high performance processing and computation, but its input/outputs (I/Os) bandwidth is unable to scale with its processing power. The signal I/Os or interconnections are needed between processors and input devices, between processors for multiprocessor systems, and between processors and storage devices. Novel chip-to-chip interconnect technologies are needed to meet this challenge. This work integrates optoelectronic technologies for chip-to-chip interconnects and parallel pipeline processing. Photonic and electronic technologies are complementary to each other in the sense that electronics is more suitable for high-speed, low cost computation, and photonics is more suitable for high-bandwidth information transmission. Smart pixel technology uses electronics for logic switching and optics for chip-to- chip interconnects, thus combining the abilities of photonics and electronics nicely. This work describes both vertical and horizontal integration of smart pixel technologies for chip-to-chip optical interconnects and its applications. We present smart pixel VLSI designs in both hybrid CMOS/MQW smart pixel and monolithic GaAs smart pixel technologies. We use the CMOS/MQW technology for smart pixel array cellular logic (SPARCL) processors for SIMD parallel pipeline processing. We have tested the chip and constructed a prototype system for device characterization and system demonstration. We have verified the functionality of the system and characterized the electrical functions of the chip and the optoelectronic properties of the MQW devices. We have developed algorithms that utilize SPARCL for various

  2. Probing silicon quantum dots by single-dot techniques

    NASA Astrophysics Data System (ADS)

    Sychugov, Ilya; Valenta, Jan; Linnros, Jan

    2017-02-01

    Silicon nanocrystals represent an important class of non-toxic, heavy-metal free quantum dots, where the high natural abundance of silicon is an additional advantage. Successful development in mass-fabrication, starting from porous silicon to recent advances in chemical and plasma synthesis, opens up new possibilities for applications in optoelectronics, bio-imaging, photovoltaics, and sensitizing areas. In this review basic physical properties of silicon nanocrystals revealed by photoluminescence spectroscopy, lifetime, intensity trace and electrical measurements on individual nanoparticles are summarized. The fabrication methods developed for accessing single Si nanocrystals are also reviewed. It is concluded that silicon nanocrystals share many of the properties of direct bandgap nanocrystals exhibiting sharp emission lines at low temperatures, on/off blinking, spectral diffusion etc. An analysis of reported results is provided in comparison with theory and with direct bandgap material quantum dots. In addition, the role of passivation and inherent interface/matrix defects is discussed.

  3. Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride

    NASA Astrophysics Data System (ADS)

    Serpenguzel, Ali; Aydinli, Atilla; Bek, Alpan

    1998-07-01

    Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride--air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser.

  4. A simple encapsulation method for organic optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Sun, Qian-Qian; An, Qiao-Shi; Zhang, Fu-Jun

    2014-08-01

    The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells (PSCs). The power conversion efficiencies (PCE) of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices.

  5. Metal-dielectric hybrid surfaces as integrated optoelectronic interfaces

    DOEpatents

    Narasimhan, Vijay K.; Hymel, Thomas M.; Lai, Ruby A.; Cui, Yi

    2017-01-03

    An optoelectronic device has a hybrid metal-dielectric optoelectronic interface including an array of nanoscale dielectric resonant elements (e.g., nanopillars), and a metal film disposed between the dielectric resonant elements and below a top surface of the resonant elements such that the dielectric resonant elements protrude through the metal film. The device may also include an anti-reflection coating. The device may further include a metal film layer on each of the dielectric resonant elements.

  6. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    DOEpatents

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  7. Optoelectronic devices incorporating fluoropolymer compositions for protection

    DOEpatents

    Chen, Xuming; Chum, Pak-Wing S.; Howard, Kevin E.; Lopez, Leonardo C.; Sumner, William C.; Wu, Shaofu

    2015-12-22

    The fluoropolymer compositions of the present invention generally incorporate ingredients comprising one or more fluoropolymers, an ultraviolet light protection component (hereinafter UV protection component), and optionally one or more additional ingredients if desired. The UV protection component includes a combination of at least one hindered tertiary amine (HTA) compound having a certain structure and a weight average molecular weight of at least 1000. This tertiary amine is used in combination with at least one organic, UV light absorbing compound (UVLA compound) having a weight average molecular weight greater than 500. When the HTA compound and the UVLA compound are selected according to principles of the present invention, the UV protection component provides fluoropolymer compositions with significantly improved weatherability characteristics for protecting underlying materials, features, structures, components, and/or the like. In particular, fluoropolymer compositions incorporating the UV protection component of the present invention have unexpectedly improved ability to resist blackening, coloration, or other de gradation that may be caused by UV exposure. As a consequence, devices protected by these compositions would be expected to have dramatically improved service life. The compositions have a wide range of uses but are particularly useful for forming protective layers in optoelectronic devices.

  8. Colloidal quantum dot materials for infrared optoelectronics

    NASA Astrophysics Data System (ADS)

    Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.

    2015-09-01

    Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.

  9. Emissive polymeric materials for optoelectronic devices

    SciTech Connect

    Shiang, Joseph John; Chichak, Kelly Scott; Cella, James Anthony; Lewis, Larry Neil; Janora, Kevin Henry

    2011-07-05

    Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

  10. Software for Use with Optoelectronic Measuring Tool

    NASA Technical Reports Server (NTRS)

    Ballard, Kim C.

    2004-01-01

    A computer program has been written to facilitate and accelerate the process of measurement by use of the apparatus described in "Optoelectronic Tool Adds Scale Marks to Photographic Images" (KSC-12201). The tool contains four laser diodes that generate parallel beams of light spaced apart at a known distance. The beams of light are used to project bright spots that serve as scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The computer program is applicable to a scene that contains the laser spots and that has been imaged in a square pixel format that can be imported into a graphical user interface (GUI) generated by the program. It is assumed that the laser spots and the distance(s) to be measured all lie in the same plane and that the plane is perpendicular to the line of sight of the camera used to record the image

  11. Optical and optoelectronic properties of organic nanomaterials

    NASA Astrophysics Data System (ADS)

    Satapathi, Soumitra

    In this dissertation research, organic nanomaterials, such as semiconducting polymer nanoparticles, graphene nanosheets and organic small molecules were successfully utilized for fabrication of organic solar cells, optical sensors and for high contrast imaging of cancer cells. Semiconducting polymer nanoparticles were synthesized by a simple miniemulsion technique. These size controllable polymeric nanoparticles were proven to be able to optimize the morphologies of the bulk heterojunction solar cells and to provide fundamental insight into the evolution of the nanostructures. Highly sensitive optical sensors were fabricated using these polymeric nanoparticles for efficient detection of nitroaromatic explosives, such as 2,4 dinitrotoluene (DNT) and 2,4,6 trinitrotoluene (TNT) in aqueous medium as well as in vapor the phase. Moreover, these water dispersible and fluorescent polymer nanodots were two-photon active and could be internalized by tumor cells as demonstrated by two-photon confocal imaging. In addition to the polymer nanoparticles, the role of the graphene nanosheets in the performance enhancement of dye sensitized solar cells was also investigated. The use of organic small molecules for optical sensing of different nerve gas agents and their potential use in multiphoton imaging of cancer cells were discussed. Controlling material properties at nanoscale for optoelectronics and imaging application as discussed in this dissertation would provide new dimensions in the areas of applied physics and materials science researches.

  12. Recent progress in opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute

    2005-01-01

    The optoelectronic oscillator (OEO) is a unique device based on photonics techniques to generate highly spectrally pure microwave signals [1]. The development of the OEO was motivated by the need for high performance oscillators in the frequency range larger than 10 GHz, where conventional electronic oscillators have a number of limitations. These limitations typically stem from the product of fQ, where f is the oscillator frequency and Q is the quality factor of the resonator in the oscillator. In conventional resonators, whether electromagnetic or piezoelectric, this product is usually a constant. Thus, as the oscillator frequency is pushed higher, the quality factor degrades, resulting in degradation of the phase noise of the oscillator. An approach to mitigate the problem is to start with a very high quality signal in the 5 to 100 MHz range generated by a quartz oscillator and multiply the frequency to achieve the desired microwave signal. Here again, frequency multiplication also results in an increase of the phase noise by a factor of 2010gN, where N is the multiplication factor.

  13. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY

    2011-11-08

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## wherein R.sup.1 and R.sup.2 are independently alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.5is H or CHO; R.sup.3 and R.sup.4 are independently hydrogen, alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.11 and R.sup.12 taken together form a substituted or unsubstituted monocyclic or bicyclic heteroaromatic ring; R.sup.13 is independently at each occurrence halo, nitro, hydroxy, amino, alkyl, aryl, arylalkyl, alkoxy, substituted alkoxy, substituted alkyl, substituted aryl, or substituted arylalkyl; Ar is aryl, heteroaryl, substituted aryl, substituted heteroaryl, or a combination thereof; X is selected from a direct bond, alky, substituted alkyl, and combinations thereof; Y is CHO or NH.sub.2; Z is CHO or NH.sub.2 where Z does not equal Y; and p is 0, 1 or 2. The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  14. Assessment of dental plaque by optoelectronic methods

    NASA Astrophysics Data System (ADS)

    Negrutiu, Meda-Lavinia; Sinescu, Cosmin; Bortun, Cristina Maria; Levai, Mihaela-Codrina; Topala, Florin Ionel; Crǎciunescu, Emanuela Lidia; Cojocariu, Andreea Codruta; Duma, Virgil Florin; Podoleanu, Adrian Gh.

    2016-03-01

    The formation of dental biofilm follows specific mechanisms of initial colonization on the surface, microcolony formation, development of organized three dimensional community structures, and detachment from the surface. The structure of the plaque biofilm might restrict the penetration of antimicrobial agents, while bacteria on a surface grow slowly and display a novel phenotype; the consequence of the latter is a reduced sensitivity to inhibitors. The aim of this study was to evaluate with different optoelectronic methods the morphological characteristics of the dental biofilm. The study was performed on samples from 25 patients aged between 18 and 35 years. The methods used in this study were Spectral Domain Optical Coherence Tomography (SD-OCT) working at 870 nm for in vivo evaluations and Scanning Electron Microscopy (SEM) for validations. For each patient a sample of dental biofilm was obtained directly from the vestibular surface of the teeth's. SD-OCT produced C- and B-scans that were used to generate three dimensional (3D) reconstructions of the sample. The results were compared with SEM evaluations. The biofilm network was dramatically destroyed after the professional dental cleaning. OCT noninvasive methods can act as a valuable tool for the 3D characterization of dental biofilms.

  15. Superenhancers: Novel opportunities for nanowire optoelectronics

    PubMed Central

    Khudiyev, Tural; Bayindir, Mehmet

    2014-01-01

    Nanowires play a crucial role in the development of new generation optoelectronic devices ranging from photovoltaics to photodetectors, as these designs capitalize on the low material usage, utilize leaky-mode optical resonances and possess high conversion efficiencies associated with nanowire geometry. However, their current schemes lack sufficient absorption capacity demanded for their practical applicability, and more efficient materials cannot find widespread usage in these designs due to their rarity and cost. Here we suggest a novel and versatile nanoconcentrator scheme utilizing unique optical features of non-resonant Mie (NRM) scattering regime associated with low-index structures. The scattering regime is highly compatible with resonant Mie absorption effect taking place in nanowire absorbers. This technique in its optimized forms can provide up to 1500% total absorption enhancement, 400-fold material save and is suitable for large-area applications with significant area preservation compared to thin-film of same materials. Proposed superenhancer concept with its exceptional features such as broadband absorption enhancement, polarization immunity and material-independent manner paves the way for development of efficient nanowire photosensors or solar thermophotovoltaic devices and presents novel design opportunities for self-powered nanosystems. PMID:25511865

  16. Admin interface of Optoelectronics Research Center

    NASA Astrophysics Data System (ADS)

    Nicolae, Popescu R.; Schiopu, Paul

    2007-05-01

    The scope of the Optoelectronics Research Center website is to provide useful information about the center such as: member's cv, projects, conferences, as well as many other related information's. Based upon a worldwide study a visitor pay attention to a website for about 50-60 seconds, in this time he(she) is searching the website pages for the desired information, if the information it's found in this period the visitor will be pleased, if not he will look the information on other websites. For the CCO website a user-friendly environment has been designed, this interface has been severely tested, the results matching the 50-60 seconds time. In more than 80% of the cases the webmasters are not the same with the webdesigners; this is the point where the problems frequently occur. The content of a website has to be updated in order for visitors to get the proper information's, and not to be misled. To overcome this problem an administrator interface has been constructed. Using the admin interface the webmaster will easily update the whole website with only few clicks of a button, without need to know anything about programming or webdesign.

  17. Terahertz biochip based on optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lu, Ja-Yu; Chen, Li-Jin; Kao, Tzeng-Fu; Chang, Hsu-Hao; Liu, An-Shyi; Yu, Yi-Chun; Wu, Ruey-Beei; Liu, Wei-Sheng; Chyi, Jen-Inn; Pan, Ci-Ling; Tsai, Ming-Cheng; Sun, Chi-Kuang

    2005-10-01

    The accurate detection of minute amounts of chemical and biological substances has been a major goal in bioanalytical technology throughout the twentieth century. Fluorescence dye labeling detection remains the effective analysis method, but it modifies the surroundings of molecules and lowering the precision of detection. An alternative label free detecting tool with little disturbance of target molecules is highly desired. Theoretical calculations and experiments have demonstrated that many biomolecules have intrinsic resonance due to vibration or rotation level transitions, allowing terahertz (THz)-probing technique as a potential tool for the label-free and noninvasive detection of biomolecules. In this paper, we first ever combined the THz optoelectronic technique with biochip technology to realize THz biosensing. By transferring the edge-coupled photonic transmitter into a thin glass substrate and by integrating with a polyethylene based biochip channel, near field THz detection of the biomolecules is demonstrated. By directly acquiring the absorption micro-spectrum in the THz range, different boiomecules can then be identified according to their THz fingerprints. For preliminary studies, the capability to identity different illicit drug powders is successfully demonstrated. This novel biochip sensing system has the advantages including label-free detection, high selectivity, high sensitivity, ease for sample preparation, and ease to parallel integrate with other biochip functionality modules. Our demonstrated detection capability allows specifying various illicit drug powders with weight of nano-gram, which also enables rapid identification with minute amounts of other important molecules including DNA, biochemical agents in terrorism warfare, explosives, viruses, and toxics.

  18. Bioengineered Silicon Diatoms: Adding Photonic Features to a Nanostructured Semiconductive Material for Biomolecular Sensing

    NASA Astrophysics Data System (ADS)

    Rea, Ilaria; Terracciano, Monica; Chandrasekaran, Soundarrajan; Voelcker, Nicolas H.; Dardano, Principia; Martucci, Nicola M.; Lamberti, Annalisa; De Stefano, Luca

    2016-09-01

    Native diatoms made of amorphous silica are first converted into silicon structures via magnesiothermic process, preserving the original shape: electron force microscopy analysis performed on silicon-converted diatoms demonstrates their semiconductor behavior. Wet surface chemical treatments are then performed in order to enhance the photoluminescence emission from the resulting silicon diatoms and, at the same time, to allow the immobilization of biological probes, namely proteins and antibodies, via silanization. We demonstrate that light emission from semiconductive silicon diatoms can be used for antibody-antigen recognition, endorsing this material as optoelectronic transducer.

  19. Evaluation of event position reconstruction in monolithic crystals that are optically coupled

    NASA Astrophysics Data System (ADS)

    Morrocchi, M.; Hunter, W. C. J.; Del Guerra, A.; Lewellen, T. K.; Kinahan, P. E.; MacDonald, L. R.; Bisogni, M. G.; Miyaoka, R. S.

    2016-12-01

    A PET detector featuring a pseudo-monolithic crystal is being developed as a more cost-effective alternative to a full monolithic crystal PET detector. This work evaluates different methods to localize the scintillation events in quartered monolithic crystals that are optically coupled. A semi-monolithic crystal assembly was formed using four 26  ×  26  ×  10 mm3 LYSO crystals optically coupled together using optical adhesive, to mimic a 52  ×  52  ×  10 mm3 monolithic crystal detector. The crystal assembly was coupled to a 64-channel multi-anode photomultiplier tube using silicon grease. The detector was calibrated using a 34  ×  34 scan grid. Events were first filtered and depth separated using a multi-Lorentzian fit to the collected light distribution. Next, three different techniques were explored to generate the look up tables for the event positioning. The first technique was ‘standard interpolation’ across the interface. The second technique was ‘central extrapolation’, where a bin was placed at the midpoint of the interface and events positioned within the interface region were discarded. The third technique used a ‘central overlap’ method where an extended region was extrapolated at each interface. Events were then positioned using least-squares minimization and maximum likelihood methods. The least-squares minimization applied to the look up table generated with the standard interpolation technique had the best full width at half maximum (FWHM) intrinsic spatial resolution and the lowest bias. However, there were discontinuities in the event positioning that would most likely lead to artifacts in the reconstructed image. The central extrapolation technique also had discontinuities and a 30% sensitivity loss near the crystal-crystal interfaces. The central overlap technique had slightly degraded performance metrics, but it still provided ~2.1 mm intrinsic spatial resolution at the crystal

  20. Selective oxidation of cyclohexene through gold functionalized silica monolith microreactors

    NASA Astrophysics Data System (ADS)

    Alotaibi, Mohammed T.; Taylor, Martin J.; Liu, Dan; Beaumont, Simon K.; Kyriakou, Georgios

    2016-04-01

    Two simple, reproducible methods of preparing evenly distributed Au nanoparticle containing mesoporous silica monoliths are investigated. These Au nanoparticle containing monoliths are subsequently investigated as flow reactors for the selective oxidation of cyclohexene. In the first strategy, the silica monolith was directly impregnated with Au nanoparticles during the formation of the monolith. The second approach was to pre-functionalize the monolith with thiol groups tethered within the silica mesostructure. These can act as evenly distributed anchors for the Au nanoparticles to be incorporated by flowing a Au nanoparticle solution through the thiol functionalized monolith. Both methods led to successfully achieving even distribution of Au nanoparticles along the length of the monolith as demonstrated by ICP-OES. However, the impregnation method led to strong agglomeration of the Au nanoparticles during subsequent heating steps while the thiol anchoring procedure maintained the nanoparticles in the range of 6.8 ± 1.4 nm. Both Au nanoparticle containing monoliths as well as samples with no Au incorporated were tested for the selective oxidation of cyclohexene under constant flow at 30 °C. The Au free materials were found to be catalytically inactive with Au being the minimum necessary requirement for the reaction to proceed. The impregnated Au-containing monolith was found to be less active than the thiol functionalized Au-containing material, attributable to the low metal surface area of the Au nanoparticles. The reaction on the thiol functionalized Au-containing monolith was found to depend strongly on the type of oxidant used: tert-butyl hydroperoxide (TBHP) was more active than H2O2, likely due to the thiol induced hydrophobicity in the monolith.

  1. Plasmonic and silicon spherical nanoparticle antireflective coatings

    PubMed Central

    Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.

    2016-01-01

    Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes. PMID:26926602

  2. Plasmonic and silicon spherical nanoparticle antireflective coatings

    NASA Astrophysics Data System (ADS)

    Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.

    2016-03-01

    Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes.

  3. Plasmonic and silicon spherical nanoparticle antireflective coatings.

    PubMed

    Baryshnikova, K V; Petrov, M I; Babicheva, V E; Belov, P A

    2016-03-01

    Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes.

  4. Hybrid III-V/silicon lasers

    NASA Astrophysics Data System (ADS)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  5. Three-Dimensional Assembly of Yttrium Oxide Nanosheets into Luminescent Aerogel Monoliths with Outstanding Adsorption Properties.

    PubMed

    Cheng, Wei; Rechberger, Felix; Niederberger, Markus

    2016-02-23

    The preparation of macroscopic materials from two-dimensional nanostructures represents a great challenge. Restacking and random aggregation to dense structures during processing prevents the preservation of the two-dimensional morphology of the nanobuilding blocks in the final body. Here we present a facile solution route to ultrathin, crystalline Y2O3 nanosheets, which can be assembled into a 3D network by a simple centrifugation-induced gelation method. The wet gels are converted into aerogel monoliths of macroscopic dimensions via supercritical drying. The as-prepared, fully crystalline Y2O3 aerogels show high surface areas of up to 445 m(2)/g and a very low density of 0.15 g/cm(3), which is only 3% of the bulk density of Y2O3. By doping and co-doping the Y2O3 nanosheets with Eu(3+) and Tb(3+), we successfully fabricated luminescent aerogel monoliths with tunable color emissions from red to green under UV excitation. Moreover, the as-prepared gels and aerogels exhibit excellent adsorption capacities for organic dyes in water without losing their structural integrity. For methyl blue we measured an unmatched adsorption capacity of 8080 mg/g. Finally, the deposition of gold nanoparticles on the nanosheets gave access to Y2O3-Au nanocomposite aerogels, proving that this approach may be used for the synthesis of catalytically active materials. The broad range of properties including low density, high porosity, and large surface area in combination with tunable photoluminescence makes these Y2O3 aerogels a truly multifunctional material with potential applications in optoelectronics, wastewater treatment, and catalysis.

  6. Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

    NASA Astrophysics Data System (ADS)

    Riegel, C.; Backhaus, M.; Van Hoorne, J. W.; Kugathasan, T.; Musa, L.; Pernegger, H.; Riedler, P.; Schaefer, D.; Snoeys, W.; Wagner, W.

    2017-01-01

    A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 1015 n/cm2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

  7. Method of fabricating a monolithic solid oxide fuel cell

    DOEpatents

    Minh, Nguyen Q.; Horne, Craig R.

    1994-01-01

    In a two-step densifying process of making a monolithic solid oxide fuel cell, a limited number of anode-electrolyte-cathode cells separated by an interconnect layer are formed and partially densified. Subsequently, the partially densified cells are stacked and further densified to form a monolithic array.

  8. Method of fabricating a monolithic solid oxide fuel cell

    DOEpatents

    Minh, N.Q.; Horne, C.R.

    1994-03-01

    In a two-step densifying process of making a monolithic solid oxide fuel cell, a limited number of anode-electrolyte-cathode cells separated by an interconnect layer are formed and partially densified. Subsequently, the partially densified cells are stacked and further densified to form a monolithic array. 10 figures.

  9. Fibrous monoliths: Economic ceramic matrix composites from powders [Final report

    SciTech Connect

    Rigali, Mark; Sutaria, Manish; Mulligan, Anthony; Creegan, Peter; Cipriani, Ron

    1999-05-26

    The project was to develop and perform pilot-scale production of fibrous monolith composites. The principal focus of the program was to develop damage-tolerant, wear-resistant tooling for petroleum drilling applications and generate a basic mechanical properties database on fibrous monolith composites.

  10. Catalytic Ignition and Upstream Reaction Propagation in Monolith Reactors

    NASA Technical Reports Server (NTRS)

    Struk, Peter M.; Dietrich, Daniel L.; Miller, Fletcher J.; T'ien, James S.

    2007-01-01

    Using numerical simulations, this work demonstrates a concept called back-end ignition for lighting-off and pre-heating a catalytic monolith in a power generation system. In this concept, a downstream heat source (e.g. a flame) or resistive heating in the downstream portion of the monolith initiates a localized catalytic reaction which subsequently propagates upstream and heats the entire monolith. The simulations used a transient numerical model of a single catalytic channel which characterizes the behavior of the entire monolith. The model treats both the gas and solid phases and includes detailed homogeneous and heterogeneous reactions. An important parameter in the model for back-end ignition is upstream heat conduction along the solid. The simulations used both dry and wet CO chemistry as a model fuel for the proof-of-concept calculations; the presence of water vapor can trigger homogenous reactions, provided that gas-phase temperatures are adequately high and there is sufficient fuel remaining after surface reactions. With sufficiently high inlet equivalence ratio, back-end ignition occurs using the thermophysical properties of both a ceramic and metal monolith (coated with platinum in both cases), with the heat-up times significantly faster for the metal monolith. For lower equivalence ratios, back-end ignition occurs without upstream propagation. Once light-off and propagation occur, the inlet equivalence ratio could be reduced significantly while still maintaining an ignited monolith as demonstrated by calculations using complete monolith heating.

  11. Creating deep soil core monoliths: Beyond the solum

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Soil monoliths serve as useful teaching aids in the study of the Earth’s critical zone where rock, soil, water, air, and organisms interact. Typical monolith preparation has so far been confined to the 1 to 2-m depth of the solum. Critical ecosystem services provided by soils include materials from ...

  12. Optoelectronic System Measures Distances to Multiple Targets

    NASA Technical Reports Server (NTRS)

    Liebe, Carl Christian; Abramovici, Alexander; Bartman, Randall; Chapsky, Jacob; Schmalz, John; Coste, Keith; Litty, Edward; Lam, Raymond; Jerebets, Sergei

    2007-01-01

    An optoelectronic metrology apparatus now at the laboratory-prototype stage of development is intended to repeatedly determine distances of as much as several hundred meters, at submillimeter accuracy, to multiple targets in rapid succession. The underlying concept of optoelectronic apparatuses that can measure distances to targets is not new; such apparatuses are commonly used in general surveying and machining. However, until now such apparatuses have been, variously, constrained to (1) a single target or (2) multiple targets with a low update rate and a requirement for some a priori knowledge of target geometry. When fully developed, the present apparatus would enable measurement of distances to more than 50 targets at an update rate greater than 10 Hz, without a requirement for a priori knowledge of target geometry. The apparatus (see figure) includes a laser ranging unit (LRU) that includes an electronic camera (photo receiver), the field of view of which contains all relevant targets. Each target, mounted at a fiducial position on an object of interest, consists of a small lens at the output end of an optical fiber that extends from the object of interest back to the LRU. For each target and its optical fiber, there is a dedicated laser that is used to illuminate the target via the optical fiber. The targets are illuminated, one at a time, with laser light that is modulated at a frequency of 10.01 MHz. The modulated laser light is emitted by the target, from where it returns to the camera (photodetector), where it is detected. Both the outgoing and incoming 10.01-MHz laser signals are mixed with a 10-MHz local-oscillator to obtain beat notes at 10 kHz, and the difference between the phases of the beat notes is measured by a phase meter. This phase difference serves as a measure of the total length of the path traveled by light going out through the optical fiber and returning to the camera (photodetector) through free space. Because the portion of the path

  13. Monolithic LTCC seal frame and lid

    SciTech Connect

    Krueger, Daniel S.; Peterson, Kenneth A.; Stockdale, Dave; Duncan, James Brent; Riggs, Bristen

    2016-06-21

    A method for forming a monolithic seal frame and lid for use with a substrate and electronic circuitry comprises the steps of forming a mandrel from a ceramic and glass based material, forming a seal frame and lid block from a ceramic and glass based material, creating a seal frame and lid by forming a compartment and a plurality of sidewalls in the seal frame and lid block, placing the seal frame and lid on the mandrel such that the mandrel fits within the compartment, and cofiring the seal frame and lid block.

  14. Toward high-resolution optoelectronic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Palanker, Daniel; Huie, Philip; Vankov, Alexander; Asher, Alon; Baccus, Steven

    2005-04-01

    It has been already demonstrated that electrical stimulation of retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. Current retinal implants provide very low resolution (just a few electrodes), while several thousand pixels are required for functional restoration of sight. We present a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array with pixel density up to 2,500 pix/mm2 (geometrically corresponding to a visual acuity of 20/80), and allows for natural eye scanning rather than scanning with a head-mounted camera. The system operates similarly to "virtual reality" imaging devices used in military and medical applications. An image from a video camera is projected by a goggle-mounted infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. Such a system provides a broad field of vision by allowing for natural eye scanning. The goggles are transparent to visible light, thus allowing for simultaneous utilization of remaining natural vision along with prosthetic stimulation. Optical control of the implant allows for simple adjustment of image processing algorithms and for learning. A major prerequisite for high resolution stimulation is the proximity of neural cells to the stimulation sites. This can be achieved with sub-retinal implants constructed in a manner that directs migration of retinal cells to target areas. Two basic implant geometries are described: perforated membranes and protruding electrode arrays. Possibility of the tactile neural stimulation is also examined.

  15. Semiselective Optoelectronic Sensors for Monitoring Microbes

    NASA Technical Reports Server (NTRS)

    Tabacco, Mary Beth; Chuang, Han; Taylor,Laura; Russo, Jaime

    2003-01-01

    Sensor systems are under development for use in real-time detection and quantitation of microbes in water without need for sampling. These systems include arrays of optical sensors; miniature, portable electronic data-acquisition circuits; and optoelectronic interfaces between the sensor arrays and data-acquisition circuits. These systems are intended for original use in long-term, inline monitoring of waterborne micro-organisms in water-reclamation systems aboard future spacecraft. They could also be adapted to similar terrestrial uses with respect to municipal water supplies, stored drinking water, and swimming water; for detecting low-level biological contamination in biotechnological, semiconductor, and pharmaceutical process streams; and in verifying the safety of foods and beverages. In addition, they could be adapted to monitoring of airborne microbes and of surfaces (e.g., to detect and/or quantitate biofilms). The designs of the sensors in these systems are based partly on those of sensors developed previously for monitoring airborne biological materials. The designs exploit molecular- recognition and fluorescence-spectroscopy techniques, such that in the presence of micro-organisms of interest, fluorescence signals change and the changes can be measured. These systems are characterized as semiselective because they respond to classes of micro-organisms and can be used to discriminate among the classes. This semiselectivity is a major aspect of the design: It is important to distinguish between (1) the principle of detection and quantitation of classes of micro-organisms by use of these sensors and (2) the principle of detection and quantitation of individual microbiological species by means of prior immuno-diagnostic and/or molecular-biology techniques. Detection of classes (in contradistinction to species) is particularly valuable when the exact nature of a contaminant is unknown.

  16. Optoelectronic Sensor System for Guidance in Docking

    NASA Technical Reports Server (NTRS)

    Howard, Richard T.; Bryan, Thomas C.; Book, Michael L.; Jackson, John L.

    2004-01-01

    The Video Guidance Sensor (VGS) system is an optoelectronic sensor that provides automated guidance between two vehicles. In the original intended application, the two vehicles would be spacecraft docking together, but the basic principles of design and operation of the sensor are applicable to aircraft, robots, vehicles, or other objects that may be required to be aligned for docking, assembly, resupply, or precise separation. The system includes a sensor head containing a monochrome charge-coupled- device video camera and pulsed laser diodes mounted on the tracking vehicle, and passive reflective targets on the tracked vehicle. The lasers illuminate the targets, and the resulting video images of the targets are digitized. Then, from the positions of the digitized target images and known geometric relationships among the targets, the relative position and orientation of the vehicles are computed. As described thus far, the VGS system is based on the same principles as those of the system described in "Improved Video Sensor System for Guidance in Docking" (MFS-31150), NASA Tech Briefs, Vol. 21, No. 4 (April 1997), page 9a. However, the two systems differ in the details of design and operation. The VGS system is designed to operate with the target completely visible within a relative-azimuth range of +/-10.5deg and a relative-elevation range of +/-8deg. The VGS acquires and tracks the target within that field of view at any distance from 1.0 to 110 m and at any relative roll, pitch, and/or yaw angle within +/-10deg. The VGS produces sets of distance and relative-orientation data at a repetition rate of 5 Hz. The software of this system also accommodates the simultaneous operation of two sensors for redundancy

  17. Silicon spintronics.

    PubMed

    Jansen, Ron

    2012-04-23

    Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

  18. Uncooled infrared monolithic imaging sensor using pyroelectric polymer

    NASA Astrophysics Data System (ADS)

    Coutures, Jean-Louis; Lemaitre, Regine; Pourquier, E.; Boucharlat, Gilles C.; Tribolet, Philippe

    1995-09-01

    P(VF2-TrFE) pyroelectric copolymer is chosen for its high level of compatibility with existing microelectronics processes, and convenient electrical properties for infrared (IR) 8 to 14 micrometer imagery in the performance range of NETD 0.1 K to 1 K. Low cost sensors, achievable thanks to the monolithic silicon wafer processing, standard package assembly, and uncooled operations, allow us to address a lot of low-end applications in which conventional IR imaging techniques -- high priced hybrid mercury cadmium telluride or indium antimonide arrays, liquid nitrogen cooling and sophisticated image processing -- are nowadays incompatible with large volume user's needs and market prices. The paper describes pyroelectric device trade-offs, architecture, and process. Based on the interline architecture, the sensor performances of the TH 7441A 128 by 128 area array infrared detector are presented: compatible with 1 inch optics, the square array is made of an 80 by 80 micrometer squared pixel, on a pixel pitch of 85 micrometer. The CCD multiplexer using patented on-site processing is designed to deliver the image information at the maximum rate of 50 image/s. Lower rates are achievable. Imaging performances are the following: a NETD of 1.7 K is achieved with an integration time of 10 ms and the use of a f/1 optics presenting a transmission of 0.8. Recent improvements in the properties of the pyroelectric sandwich include thermal insulation of the pyroelectric layer through mixed air-polyimide material and pixel side to side insulation. Thanks to on-wafer pixel reticulation, an increased modulation transfer function of 51% at Nyquist frequency is achieved.

  19. Monolithically integrated broad-band Mach-Zehnder interferometers for highly sensitive label-free detection of biomolecules through dual polarization optics.

    PubMed

    Psarouli, A; Salapatas, A; Botsialas, A; Petrou, P S; Raptis, I; Makarona, E; Jobst, G; Tukkiniemi, K; Sopanen, M; Stoffer, R; Kakabakos, S E; Misiakos, K

    2015-12-02

    Protein detection and characterization based on Broad-band Mach-Zehnder Interferometry is analytically outlined and demonstrated through a monolithic silicon microphotonic transducer. Arrays of silicon light emitting diodes and monomodal silicon nitride waveguides forming Mach-Zehnder interferometers were integrated on a silicon chip. Broad-band light enters the interferometers and exits sinusoidally modulated with two distinct spectral frequencies characteristic of the two polarizations. Deconvolution in the Fourier transform domain makes possible the separation of the two polarizations and the simultaneous monitoring of the TE and the TM signals. The dual polarization analysis over a broad spectral band makes possible the refractive index calculation of the binding adlayers as well as the distinction of effective medium changes into cover medium or adlayer ones. At the same time, multi-analyte detection at concentrations in the pM range is demonstrated.

  20. Monolithically integrated broad-band Mach-Zehnder interferometers for highly sensitive label-free detection of biomolecules through dual polarization optics

    PubMed Central

    Psarouli, A.; Salapatas, A.; Botsialas, A.; Petrou, P. S.; Raptis, I.; Makarona, E.; Jobst, G.; Tukkiniemi, K.; Sopanen, M.; Stoffer, R.; Kakabakos, S. E.; Misiakos, K.

    2015-01-01

    Protein detection and characterization based on Broad-band Mach-Zehnder Interferometry is analytically outlined and demonstrated through a monolithic silicon microphotonic transducer. Arrays of silicon light emitting diodes and monomodal silicon nitride waveguides forming Mach-Zehnder interferometers were integrated on a silicon chip. Broad-band light enters the interferometers and exits sinusoidally modulated with two distinct spectral frequencies characteristic of the two polarizations. Deconvolution in the Fourier transform domain makes possible the separation of the two polarizations and the simultaneous monitoring of the TE and the TM signals. The dual polarization analysis over a broad spectral band makes possible the refractive index calculation of the binding adlayers as well as the distinction of effective medium changes into cover medium or adlayer ones. At the same time, multi-analyte detection at concentrations in the pM range is demonstrated. PMID:26825114

  1. Monolithically integrated self-rolled-up microtube-based vertical coupler for three-dimensional photonic integration

    NASA Astrophysics Data System (ADS)

    Yu, Xin; Arbabi, Ehsan; Goddard, Lynford L.; Li, Xiuling; Chen, Xiaogang

    2015-07-01

    We demonstrate a self-rolled-up microtube-based vertical photonic coupler monolithically integrated on top of a ridge waveguide to achieve three-dimensional (3D) photonic integration. The fabrication process is fully compatible with standard planar silicon processing technology. Strong light coupling between the vertical coupler and the ridge waveguide was observed experimentally, which may provide an alternative route for 3D heterogeneous photonic integration. The highest extinction ratio observed in the transmission spectrum passing through the ridge waveguide was 23 dB.

  2. Monolithically integrated self-rolled-up microtube-based vertical coupler for three-dimensional photonic integration

    SciTech Connect

    Yu, Xin; Arbabi, Ehsan; Goddard, Lynford L.; Li, Xiuling; Chen, Xiaogang

    2015-07-20

    We demonstrate a self-rolled-up microtube-based vertical photonic coupler monolithically integrated on top of a ridge waveguide to achieve three-dimensional (3D) photonic integration. The fabrication process is fully compatible with standard planar silicon processing technology. Strong light coupling between the vertical coupler and the ridge waveguide was observed experimentally, which may provide an alternative route for 3D heterogeneous photonic integration. The highest extinction ratio observed in the transmission spectrum passing through the ridge waveguide was 23 dB.

  3. Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

    PubMed

    Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

    2012-04-09

    On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

  4. Catastrophic failure of a monolithic zirconia prosthesis.

    PubMed

    Chang, Jae-Seung; Ji, Woon; Choi, Chang-Hoon; Kim, Sunjai

    2015-02-01

    Recently, monolithic zirconia restorations have received attention as an alternative to zirconia veneered with feldspathic porcelain to eliminate chipping failures of veneer ceramics. In this clinical report, a patient with mandibular edentulism received 4 dental implants in the interforaminal area, and a screw-retained monolithic zirconia prosthesis was fabricated. The patient also received a maxillary complete removable dental prosthesis over 4 anterior roots. At the 18-month follow-up, all of the zirconia cylinders were seen to be fractured, and the contacting abutment surfaces had lost structural integrity. The damaged abutments were replaced with new abutments, and a new prosthesis was delivered with a computer-assisted design and computer-assisted manufacturing fabricated titanium framework with denture teeth and denture base resins. At the 6-month recall, the patient did not have any problems. Dental zirconia has excellent physical properties; however, care should be taken to prevent excessive stresses on the zirconia cylinders when a screw-retained zirconia restoration is planned as a definitive prosthesis.

  5. Monolithic Hydrogen Peroxide Catalyst Bed Development

    NASA Technical Reports Server (NTRS)

    Ponzo, J. B.

    2003-01-01

    With recent increased industry and government interest in rocket grade hydrogen peroxide as a viable propellant, significant effort has been expended to improve on earlier developments. This effort has been predominately centered in improving heterogeneous. typically catalyst beds; and homogeneous catalysts, which are typically solutions of catalytic substances. Heterogeneous catalyst beds have traditionally consisted of compressed wire screens plated with a catalytic substance, usually silver, and were used m many RCS applications (X-1, Mercury, and Centaur for example). Aerojet has devised a heterogeneous catalyst design that is monolithic (single piece), extremely compact, and has pressure drops equal to or less than traditional screen beds. The design consists of a bonded stack of very thin, photoetched metal plates, silver coated. This design leads to a high surface area per unit volume and precise flow area, resulting in high, stable, and repeatable performance. Very high throughputs have been demonstrated with 90% hydrogen peroxide. (0.60 lbm/s/sq in at 1775-175 psia) with no flooding of the catalyst bed. Bed life of over 900 seconds has also been demonstrated at throughputs of 0.60 lbm/s/sq in across varying chamber pressures. The monolithic design also exhibits good starting performance, short break-in periods, and will easily scale to various sizes.

  6. Large area monolithic organic solar cells

    NASA Astrophysics Data System (ADS)

    Jin, Hui; Tao, Cheng; Hambsch, Mike; Pivrikas, Almantas; Velusamy, Marappan; Aljada, Muhsen; Zhang, Yuliang; Burn, Paul L.; Meredith, Paul

    2012-11-01

    Although efficiencies of > 10% have recently been achieved in laboratory-scale organic solar cells, these competitive performance figures are yet to be translated to large active areas and geometries relevant for viable manufacturing. One of the factors hindering scale-up is a lack of knowledge of device physics at the sub-module level, particularly cell architecture, electrode geometry and current collection pathways. A more in depth understanding of how photocurrent and photovoltage extraction can be optimised over large active areas is urgently needed. Another key factor suppressing conversion efficiencies in large area cells is the relatively high sheet resistance of the transparent conducting anode - typically indium tin oxide. Hence, to replace ITO with alternative transparent conducting anodes is also a high priority on the pathway to viable module-level organic solar cells. In our paper we will focus on large area devices relevant to sub-module scales - 5 cm × 5 cm monolithic geometry. We have applied a range of experimental techniques to create a more comprehensive understanding of the true device physics that could help make large area, monolithic organic solar cells more viable. By employing this knowledge, a novel transparent anode consisting of molybdenum oxide (MoOx) and silver (Ag) is developed to replace ITO and PEDOT-free large area solar cell sub-modules, acting as both a transparent window and hole-collecting electrode. The proposed architecture and anode materials are well suited to high throughput, low cost all-solution processing.

  7. Monolithic molecularly imprinted cryogel for lysozyme recognition.

    PubMed

    Rabieizadeh, Mohammadmahdi; Kashefimofrad, Seyed Mohammadreza; Naeimpoor, Fereshteh

    2014-10-01

    The application of molecularly imprinted polymers in the selective adsorption of macromolecules such as proteins by monolithic protein-imprinted columns requires a macroporous structure, which can be provided by cryogelation at low temperature in which the formation of ice crystals gives a porous structure to the molecularly imprinted polymer. In this study, we applied this technique to synthesize lysozyme-imprinted polyacrylamide cryogels containing 8% w/v of total monomers and 0.3% w/v of lysozyme. The synthesized cryogel was sponge-like and elastic with very fast swelling and reshaping properties, showing a swelling ratio of 24.5 ± 3 and gel fraction yield of about 72%. It showed an imprinting effect of 1.58 and a separation factor of 1.37 for cytochrome c as the competing protein. Adsorption studies on the cryogel revealed that it follows the Langmuir isotherm, with a maximum theoretical adsorption capacity of 36.3 mg lysozyme per gram of cryogel. Additionally, it was shown that a salt-free rebinding solution at low flow rate and pH = 7.0 is favorable for lysozyme rebinding. This kind of monolithic column promises a wide range of application in separation of various biomolecules due to its preparation simplicity, good rebinding characteristics, and macroporosity.

  8. Monolithic columns in plant proteomics and metabolomics.

    PubMed

    Rigobello-Masini, Marilda; Penteado, José Carlos Pires; Masini, Jorge Cesar

    2013-03-01

    Since "omics" techniques emerged, plant studies, from biochemistry to ecology, have become more comprehensive. Plant proteomics and metabolomics enable the construction of databases that, with the help of genomics and informatics, show the data obtained as a system. Thus, all the constituents of the system can be seen with their interactions in both space and time. For instance, perturbations in a plant ecosystem as a consequence of application of herbicides or exposure to pollutants can be predicted by using information gathered from these databases. Analytical chemistry has been involved in this scientific evolution. Proteomics and metabolomics are emerging fields that require separation, identification, and quantification of proteins, peptides, and small molecules of metabolites in complex biological samples. The success of this work relies on efficient chromatographic and electrophoretic techniques, and on mass spectrometric detection. This paper reviews recent developments in the use of monolithic columns, focusing on their applications in "top-down" and "bottom-up" approaches, including their use as supports for immobilization of proteolytic enzymes and their use in two-dimensional and multidimensional chromatography. Whereas polymeric columns have been predominantly used for separation of proteins and polypeptides, silica-based monoliths have been more extensively used for separation of small molecules of metabolites. Representative applications in proteomics and in analysis of plant metabolites are given and summarized in tables.

  9. Monolithic uncooled IR detectors of polycrystalline PbSe: a real alternative

    NASA Astrophysics Data System (ADS)

    Vergara, G.; Gómez, L. J.; Villamayor, V.; Álvarez, M.; Torquemada, M. C.; Rodrigo, M. T.; Verdú, M.; Sánchez, F. J.; Almazán, R. M.; Plaza, J.; Rodriguez, P.; Catalán, I.; Gutierrez, R.; Montojo, M. T.; Serra-Graells, F.; Margarit, J. M.; Terés, L.

    2007-04-01

    Paradoxically more than 50 years after being used in WWII, polycrystalline PbSe technology has turned today into an emerging technology. Without any doubt one of the main facts responsible for the PbSe resurgence is a new method for processing detectors based on a Vapour Phase Deposition (VPD) technique developed at CIDA. Using this method, the first low density 2D PbSe Focal Plane Array (FPA), an x-y addressed type device, was processed on silicon. Even though the last advances have been important they are not yet enough to consider this technology as a real alternative to other uncooled technologies. To reach technical relevance and commercial interest it is obligated to integrate monolithically or hybridize the sensors with their corresponding read out electronics (ROIC). Aiming to process monolithic devices, a proper CMOS read out electronics were designed. In parallel, enabled technologies were developed for adapting the material peculiarities to the CMOS substrates. In this work, the first monolithic device of VPD PbSe is presented. Even though it is a modest 16x16 FPA with a pitch of 200 μm, it represents an important milestone, allocating polycrystalline PbSe among the major players in the short list of uncooled IR detectors. Unlike microbolometers and ferroelectrics, it is a photonic detector suitable for being used as a detector in low cost IR imagers sensitive to the MWIR band and with frame rates as high as 1000 fps. The number of applications is therefore huge, some of them specific, unique and highly demanded in the military and security fields such as sensors applied to fast imagers, Active Protection Systems or low cost seekers.

  10. Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon.

    PubMed

    Yang, Jun; Bhattacharya, Pallab

    2008-03-31

    The monolithic integration of epitaxially-grown InGaAs/GaAs self-organized quantum dot lasers with hydrogenated amorphous silicon (a:Si-H) waveguides on silicon substrates is demonstrated. Hydrogenated amorphous silicon waveguides, formed by plasma-enhanced-chemical-vapor deposition (PECVD), exhibit a propagation loss of approximately 10 dB/cm at a wavelength of 1.05 microm. The laser-waveguide coupling, with coupling coefficient of 22%, is achieved through a 3.2 microm-width groove etched by focused-ion-beam (FIB) milling which creates high-quality etched GaAs facets.

  11. Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

    SciTech Connect

    Ramírez, J. M. Berencén, Y.; Garrido, B.; Cueff, S.; Labbé, C.

    2014-08-28

    Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er{sup 3+} ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.

  12. Phototransistor-based optoelectronic tweezers for dynamic cell manipulation in cell culture media.

    PubMed

    Hsu, Hsan-yin; Ohta, Aaron T; Chiou, Pei-Yu; Jamshidi, Arash; Neale, Steven L; Wu, Ming C

    2010-01-21

    Optoelectronic tweezers (OET), based on light-induced dielectrophoresis, has been shown as a versatile tool for parallel manipulation of micro-particles and cells (P. Y. Chiou, A. T. Ohta and M. C. Wu, Nature, 2005, 436, 370-372). However, the conventional OET device cannot operate in cell culture media or other high-conductivity physiological buffers due to the limited photoconductivity of amorphous silicon. In this paper, we report a new phototransistor-based OET (Ph-OET). Consisting of single-crystalline bipolar junction transistors, the Ph-OET has more than 500x higher photoconductivity than amorphous silicon. Efficient cell trapping of live HeLa and Jurkat cells in Phosphate Buffered Saline (PBS) and Dulbecco's Modified Eagle's Medium (DMEM) has been demonstrated using a digital light projector, with a cell transport speed of 33 microm/sec, indicating a force of 14.5 pN. Optical concentration of cells and real-time control of individually addressable cell arrays have also been realized. Precise control of separation between two cells has also been demonstrated. We envision a new platform for single cell studies using Ph-OET.

  13. Hydrogel coated monoliths for enzymatic hydrolysis of penicillin G

    PubMed Central

    Smeltink, M. W.; Straathof, A. J. J.; Paasman, M. A.; van de Sandt, E. J. A. X.; Kapteijn, F.; Moulijn, J. A.

    2008-01-01

    The objective of this work was to develop a hydrogel-coated monolith for the entrapment of penicillin G acylase (E. coli, PGA). After screening of different hydrogels, chitosan was chosen as the carrier material for the preparation of monolithic biocatalysts. This protocol leads to active immobilized biocatalysts for the enzymatic hydrolysis of penicillin G (PenG). The monolithic biocatalyst was tested in a monolith loop reactor (MLR) and compared with conventional reactor systems using free PGA, and a commercially available immobilized PGA. The optimal immobilization protocol was found to be 5 g l−1 PGA, 1% chitosan, 1.1% glutaraldehyde and pH 7. Final PGA loading on glass plates was 29 mg ml−1 gel. For 400 cpsi monoliths, the final PGA loading on functionalized monoliths was 36 mg ml−1 gel. The observed volumetric reaction rate in the MLR was 0.79 mol s−1 m−3monolith. Apart from an initial drop in activity due to wash out of PGA at higher ionic strength, no decrease in activity was observed after five subsequent activity test runs. The storage stability of the biocatalysts is at least a month without loss of activity. Although the monolithic biocatalyst as used in the MLR is still outperformed by the current industrial catalyst (immobilized preparation of PGA, 4.5 mol s−1 m−3catalyst), the rate per gel volume is slightly higher for monolithic catalysts. Good activity and improved mechanical strength make the monolithic bioreactor an interesting alternative that deserves further investigation for this application. Although moderate internal diffusion limitations have been observed inside the gel beads and in the gel layer on the monolith channel, this is not the main reason for the large differences in reactor performance that were observed. The pH drop over the reactor as a result of the chosen method for pH control results in a decreased performance of both the MLR and the packed bed reactor compared to the batch system. A different

  14. Characterization of high resolution CMOS monolithic active pixel detector in SOI technology

    NASA Astrophysics Data System (ADS)

    Ahmed, M. I.; Arai, Y.; Glab, S.; Idzik, M.; Kapusta, P.; Miyoshi, T.; Takeda, A.; Turala, M.

    2015-05-01

    Novel CMOS monolithic pixel detectors designed at KEK and fabricated at Lapis Semiconductor in 0.2 μm Silicon-on-Insulator (SOI) technology are presented. A thin layer of silicon oxide separates high and low resistivity silicon layers, allowing for optimization of design of detector and readout parts. Shallow wells buried under the oxide in the detector part screen the entire pixel electronics from electrical field applied to the detector. Several integration type SOI pixel detectors have been developed with pixel sizes 8-20 μm. The general features of 14 × 14 μm2 detectors designed on different wafers (CZ-n, FZ-n and FZ-p) were measured and compared. The detector performance was studied under irradiation with visible and infra-red laser, and also X-ray ionizing source. Using X-rays from an Am-241 source the noise of readout electronics was measured at different working conditions, showing the ENC in the range of 88-120 e-. The pixel current was calculated from average DC pedestal shift while varying the pixel integration time. The operation of the detector was studied under partial and full depletion conditions. The effects of temperature and detector bias voltage on noise and leakage current were studied. Characteristics of an ADC integrated in the front-end chip are also presented.

  15. A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

    NASA Astrophysics Data System (ADS)

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2015-10-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

  16. Smart Sensing Strip Using Monolithically Integrated Flexible Flow Sensor for Noninvasively Monitoring Respiratory Flow

    PubMed Central

    Jiang, Peng; Zhao, Shuai; Zhu, Rong

    2015-01-01

    This paper presents a smart sensing strip for noninvasively monitoring respiratory flow in real time. The monitoring system comprises a monolithically-integrated flexible hot-film flow sensor adhered on a molded flexible silicone case, where a miniaturized conditioning circuit with a Bluetooth4.0 LE module are packaged, and a personal mobile device that wirelessly acquires respiratory data transmitted from the flow sensor, executes extraction of vital signs, and performs medical diagnosis. The system serves as a wearable device to monitor comprehensive respiratory flow while avoiding use of uncomfortable nasal cannula. The respiratory sensor is a flexible flow sensor monolithically integrating four elements of a Wheatstone bridge on single chip, including a hot-film resistor, a temperature-compensating resistor, and two balancing resistors. The monitor takes merits of small size, light weight, easy operation, and low power consumption. Experiments were conducted to verify the feasibility and effectiveness of monitoring and diagnosing respiratory diseases using the proposed system. PMID:26694401

  17. Optoelectronic implementation of multilayer perceptron and Hopfield neural networks

    NASA Astrophysics Data System (ADS)

    Domanski, Andrzej W.; Olszewski, Mikolaj K.; Wolinski, Tomasz R.

    2004-11-01

    In this paper we present an optoelectronic implementation of two networks based on multilayer perceptron and the Hopfield neural network. We propose two different methods to solve a problem of lack of negative optical signals that are necessary for connections between layers of perceptron as well as within the Hopfield network structure. The first method applied for construction of multilayer perceptron was based on division of signals into two channels and next to use both of them independently as positive and negative signals. The second one, applied for implementation of the Hopfield model, was based on adding of constant value for elements of matrix weight. Both methods of compensation of lack negative optical signals were tested experimentally as optoelectronic models of multilayer perceptron and Hopfield neural network. Special configurations of optical fiber cables and liquid crystal multicell plates were used. In conclusion, possible applications of the optoelectronic neural networks are briefly discussed.

  18. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOEpatents

    Shtein, Max; Yang, Fan; Forrest, Stephen R.

    2008-10-14

    A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

  19. Reversible Modulation of Spontaneous Emission by Strain in Silicon Nanowires

    PubMed Central

    Shiri, Daryoush; Verma, Amit; Selvakumar, C. R.; Anantram, M. P.

    2012-01-01

    We computationally study the effect of uniaxial strain in modulating the spontaneous emission of photons in silicon nanowires. Our main finding is that a one to two orders of magnitude change in spontaneous emission time occurs due to two distinct mechanisms: (A) Change in wave function symmetry, where within the direct bandgap regime, strain changes the symmetry of wave functions, which in turn leads to a large change of optical dipole matrix element. (B) Direct to indirect bandgap transition which makes the spontaneous photon emission to be of a slow second order process mediated by phonons. This feature uniquely occurs in silicon nanowires while in bulk silicon there is no change of optical properties under any reasonable amount of strain. These results promise new applications of silicon nanowires as optoelectronic devices including a mechanism for lasing. Our results are verifiable using existing experimental techniques of applying strain to nanowires. PMID:22708056

  20. Self-Powered Ultrabroadband Photodetector Monolithically Integrated on a PMN-PT Ferroelectric Single Crystal.

    PubMed

    Fang, Huajing; Xu, Chao; Ding, Jie; Li, Qiang; Sun, Jia-Lin; Dai, Ji-Yan; Ren, Tian-Ling; Yan, Qingfeng

    2016-12-07

    Photodetectors capable of detecting two or more bands simultaneously with a single system have attracted extensive attentions because of their critical applications in image sensing, communication, and so on. Here, we demonstrate a self-powered ultrabroadband photodetector monolithically integrated on a 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-28PT) single crystal. By combining the optothermal and pyroelectric effect, the multifunctional PMN-28PT single crystal can response to a wide wavelength range from UV to terahertz (THz). At room temperature, the photodetector could generate a pyroelectric current under the intermittent illumination of incident light in absence of external bias. A systematic study of the photoresponse was investigated. The pyroelectric current shows an almost linear relationship to illumination intensity. Benefiting from the excellent pyroelectric property of PMN-28PT single crystal and the optimized device architecture, the device exhibited a dramatic improvement in operation frequency up to 3 kHz without any obvious degradation in sensitivity. Such a self-powered photodetector with ultrabroadband response may open a window for the novel application of ferroelectric materials in optoelectronics.

  1. Monolithic integration of multiple-emission-wavelength laser diodes using low-energy ion implantation

    NASA Astrophysics Data System (ADS)

    Aimez, Vincent; Paquette, Michel; Beauvais, Jacques; Beerens, Jean; Poole, Philip J.; Charbonneau, N. Sylvain

    1998-09-01

    A monolithic optoelectronic chip containing multiple emission wavelength laser diodes has been developed. The semiconductor quantum well lasers have Fabry-Perot cavities of 500 micrometers in length. Electrical insulation between individual integrated devices has been achieved by wet etching the top contact layer and by a lift-off of the surface metal contact between the different lasers. The electroluminescence peak emission spectra of the integrated laser diodes has been shifted over a 25 nm range and 74 nm for discrete devices. Blueshifting of the emission wavelength has been achieved by quantum well intermixing using an industrial low energy ion implanter to generate point defects and a rapid thermal annealer to promote interdiffusion of the barrier and quantum well atoms during the recrystallization anneal. Phosphorus ions were implanted with an energy of 360 keV to precisely defined regions of the heterostructure with SiO2 serving as a masking material. Thus reference and intermixed regions were integrated on a single component. Integrated and discrete laser diodes have been assessed in terms of threshold currents and emission wavelengths.

  2. Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters

    NASA Astrophysics Data System (ADS)

    Yoo, Geonwook; Choi, Sol Lea; Park, Sang Jin; Lee, Kyu-Tae; Lee, Sanghyun; Oh, Min Suk; Heo, Junseok; Park, Hui Joon

    2017-01-01

    Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS2 phototransistors on a polyarylate substrate exhibit decent electrical characteristics (μFE > 64.4 cm2/Vs, on/off ratio > 106), and the integrated F-P filters, being able to cover whole visible spectrum, successfully modulate the spectral response characteristics of MoS2 phototransistors from ~495 nm (blue) to ~590 nm (amber). Furthermore, power dependence of both responsivity and specific detectivity shows similar trend with other reports, dominated by the photogating effect. When combined with large-area monolayer MoS2 for optical property enhancement and array processing, our results can be further developed into ultra-thin flexible photodetectors for wearables, conformable image sensor, and other optoelectronic applications.

  3. Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters

    PubMed Central

    Yoo, Geonwook; Choi, Sol Lea; Park, Sang Jin; Lee, Kyu-Tae; Lee, Sanghyun; Oh, Min Suk; Heo, Junseok; Park, Hui Joon

    2017-01-01

    Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS2 phototransistors on a polyarylate substrate exhibit decent electrical characteristics (μFE > 64.4 cm2/Vs, on/off ratio > 106), and the integrated F-P filters, being able to cover whole visible spectrum, successfully modulate the spectral response characteristics of MoS2 phototransistors from ~495 nm (blue) to ~590 nm (amber). Furthermore, power dependence of both responsivity and specific detectivity shows similar trend with other reports, dominated by the photogating effect. When combined with large-area monolayer MoS2 for optical property enhancement and array processing, our results can be further developed into ultra-thin flexible photodetectors for wearables, conformable image sensor, and other optoelectronic applications. PMID:28098252

  4. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  5. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    NASA Astrophysics Data System (ADS)

    Bhasin, K. B.; Connolly, D. J.

    1986-10-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  6. A novel monolithic fabrication method for a plastic microfluidic chip with liquid interconnecting ports

    NASA Astrophysics Data System (ADS)

    Lee, Bong-Kee; Kwon, Tai Hun

    2010-10-01

    In the present study, a novel monolithic fabrication method was developed for the manufacturing of a plastic microfluidic chip with liquid interconnecting ports. As the present method can realize both interconnecting ports and through holes, which are essential components for the delivery of working fluids, in the plastic microfluidic chip, no additional processes and external ports are required. Furthermore, the connection of external silicone tubing can be simply achieved by utilizing an elastic deformation of the used tubing. As one representative example, a microinjection molding of a prototype microfluidic chip having two types of interconnecting ports was demonstrated. After obtaining upper and lower plates by the microinjection molding process utilizing mold cores with pin structures, the thermal bonding of the molded plates was carried out, resulting in the prototype plastic microfluidic chip with interconnecting ports. From microfluidic experiments using the fabricated prototype, it was found that the present method could be quite useful in various microfluidic applications.

  7. Depleted Monolithic Pixels (DMAPS) in a 150 nm technology: lab and beam results

    NASA Astrophysics Data System (ADS)

    Obermann, T.; Hemperek, T.; Hügging, F.; Krüger, H.; Pohl, D.-L.; Schwenker, B.; Wermes, N.

    2017-01-01

    The fully depleted monolithic active pixel sensor (DMAPS) is a new concept integrating full CMOS circuitry onto a fully depletable silicon substrate wafer. The realization of prototypes of the DMAPS concept relies on the availability of multiple well CMOS processes and high resistive substrates. The CMOS foundry ESPROS Photonics offers both and was chosen for prototyping. Two prototypes, EPCB01 and EPCB02, were developed in a 150 nm process on a high resistive n-type wafer of 50 μm thickness. The prototypes have 352 square pixels of 40 μm pitch and small n-well charge collection node with very low capacitance (n+-implantation size: 5 μm by 5 μm) and about 150 transistors per pixel (CSA and discriminator plus a small digital part).

  8. Monolithically integrated reconfigurable add-drop multiplexer for mode-division-multiplexing systems.

    PubMed

    Wang, Shipeng; Wu, Hao; Tsang, Hon Ki; Dai, Daoxin

    2016-11-15

    An integrated reconfigurable optical add-drop multiplexer (ROADM) for mode-division-multiplexing systems is proposed and demonstrated for the first time, to the best of our knowledge. The present ROADM with four mode-channels is composed of a four-channel mode demultiplexer, four identical 2×2 thermo-optic Mach-Zehnder switches (MZSs), and a four-channel mode multiplexer, which are integrated monolithically on silicon. All the devices are designed for operation with TM polarization. The ROADM can add/drop any one of the mode channels freely by thermally turning on/off the corresponding MZS. For the added/dropped mode-channels, the excess loss is 1-5 dB, and the extinction ratio is 15-20 dB in the wavelength range of 1535-1565 nm.

  9. An ultrafast silicon nanoplasmonic ballistic triode

    SciTech Connect

    Greig, S. R. Elezzabi, A. Y.

    2014-12-15

    A nanoscale three terminal silicon based nanoplasmonic triode is proposed as a nanometer transistor. The device is suitable for monolithic integration with complementary-metal-oxide-semiconductor technology. Due to the highly spatially inhomogeneous, highly confined nanoplasmonic mode, electrons generated through two-photon absorption in the silicon are ponderomotively accelerated towards the copper anode producing an output current. Application of a negative grid voltage allows for control of the output current. The nanoplasmonic triode is able to achieve output current as high as 628 mA/μm on an ultrafast timescale of 150 fs in a compact footprint of 0.07 μm{sup 2}. Reduction of the plasmonic field strength allows for a CMOS compatible current of 11.7 mA/μm. The results demonstrate the potential for the compact optical control of current useful for applications in high-speed, high current switching, and amplification.

  10. Optoelectronic Infrastructure for Radio Frequency and Optical Phased Arrays

    NASA Technical Reports Server (NTRS)

    Cai, Jianhong

    2015-01-01

    Optoelectronic integrated circuits offer radiation-hardened solutions for satellite systems in addition to improved size, weight, power, and bandwidth characteristics. ODIS, Inc., has developed optoelectronic integrated circuit technology for sensing and data transfer in phased arrays. The technology applies integrated components (lasers, amplifiers, modulators, detectors, and optical waveguide switches) to a radio frequency (RF) array with true time delay for beamsteering. Optical beamsteering is achieved by controlling the current in a two-dimensional (2D) array. In this project, ODIS integrated key components to produce common RF-optical aperture operation.

  11. High bandgap III-V alloys for high efficiency optoelectronics

    DOEpatents

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  12. Optoelectronic devices, plasmonics, and photonics with topological insulators

    NASA Astrophysics Data System (ADS)

    Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.

    2017-03-01

    Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

  13. Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon

    PubMed Central

    Qiu, Y.; Bender, H.; Richard, O.; Kim, M.-S.; Van Besien, E.; Vos, I.; de Potter de ten Broeck, M.; Mocuta, D.; Vandervorst, W.

    2015-01-01

    Silicon crystallizes in the diamond-cubic phase and shows only a weak emission at 1.1 eV. Diamond-hexagonal silicon however has an indirect bandgap at 1.5 eV and has therefore potential for application in opto-electronic devices. Here we discuss a method based on advanced silicon device processing to form diamond-hexagonal silicon nano-ribbons. With an appropriate temperature anneal applied to densify the oxide fillings between silicon fins, the lateral outward stress exerted on fins sandwiched between wide and narrow oxide windows can result in a phase transition from diamond-cubic to diamond-hexagonal Si at the base of these fins. The diamond-hexagonal slabs are generally 5–8 nm thick and can extend over the full width and length of the fins, i.e. have a nano-ribbon shape along the fins. Although hexagonal silicon is a metastable phase, once formed it is found being stable during subsequent high temperature treatments even during process steps up to 1050 ºC. PMID:26239286

  14. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  15. Rapid process for producing transparent, monolithic porous glass

    DOEpatents

    Coronado, Paul R.

    2006-02-14

    A process for making transparent porous glass monoliths from gels. The glass is produced much faster and in much larger sizes than present technology for making porous glass. The process reduces the cost of making large porous glass monoliths because: 1) the process does not require solvent exchange nor additives to the gel to increase the drying rates, 2) only moderate temperatures and pressures are used so relatively inexpensive equipment is needed, an 3) net-shape glass monoliths are possible using this process. The process depends on the use of temperature to control the partial pressure of the gel solvent in a closed vessel, resulting in controlled shrinking during drying.

  16. Advanced monolithic pixel sensors using SOI technology

    NASA Astrophysics Data System (ADS)

    Miyoshi, Toshinobu; Arai, Yasuo; Asano, Mari; Fujita, Yowichi; Hamasaki, Ryutaro; Hara, Kazuhiko; Honda, Shunsuke; Ikegami, Yoichi; Kurachi, Ikuo; Mitsui, Shingo; Nishimura, Ryutaro; Tauchi, Kazuya; Tobita, Naoshi; Tsuboyama, Toru; Yamada, Miho

    2016-07-01

    We are developing advanced pixel sensors using silicon-on-insulator (SOI) technology. A SOI wafer is used; top silicon is used for electric circuit and bottom silicon is used as a sensor. Target applications are high-energy physics, X-ray astronomy, material science, non-destructive inspection, medical application and so on. We have developed two integration-type pixel sensors, FPIXb and INTPIX7. These sensors were processed on single SOI wafers with various substrates in n- or p-type and double SOI wafers. The development status of double SOI sensors and some up-to-date test results of n-type and p-type SOI sensors are shown.

  17. Monolithic microwave integrated circuit water vapor radiometer

    NASA Technical Reports Server (NTRS)

    Sukamto, L. M.; Cooley, T. W.; Janssen, M. A.; Parks, G. S.

    1991-01-01

    A proof of concept Monolithic Microwave Integrated Circuit (MMIC) Water Vapor Radiometer (WVR) is under development at the Jet Propulsion Laboratory (JPL). WVR's are used to remotely sense water vapor and cloud liquid water in the atmosphere and are valuable for meteorological applications as well as for determination of signal path delays due to water vapor in the atmosphere. The high cost and large size of existing WVR instruments motivate the development of miniature MMIC WVR's, which have great potential for low cost mass production. The miniaturization of WVR components allows large scale deployment of WVR's for Earth environment and meteorological applications. Small WVR's can also result in improved thermal stability, resulting in improved calibration stability. Described here is the design and fabrication of a 31.4 GHz MMIC radiometer as one channel of a thermally stable WVR as a means of assessing MMIC technology feasibility.

  18. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K.; Wei, G.; Yu, P.C.

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  19. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. . Electro-Optics Technology Center); Wei, G. ); Yu, P.C. )

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  20. Solid oxide fuel cell having monolithic core

    NASA Astrophysics Data System (ADS)

    Ackerman, J. P.; Young, J. E.

    1983-10-01

    A solid oxide fuel cell is described for electrochemically combining fuel and oxidant for generating galvanic output, wherein the cell core has an array of electrolyte and interconnect walls that are substantially devoid of any composite inert materials for support. The core is monolithic, where each electrolyte wall consists of thin layers of cathode and anode materials sandwiching a thin layer of electrolyte material. The electrolyte walls are arranged and backfolded between adjacent interconnect walls operable to define a plurality of core passageways alternately arranged where the inside faces have only the anode material or only the cathode material exposed. Each layer of the electrolyte and interconnect materials 0.002 to 0.01 cm thick; and each layer of the cathode and anode materials is 0.002 to 0.05 cm thick.