Monolithically integrated active optical devices. [with application in optical communication
NASA Technical Reports Server (NTRS)
Ballantyne, J.; Wagner, D. K.; Kushner, B.; Wojtzcuk, S.
1981-01-01
Considerations relevant to the monolithic integration of optical detectors, lasers, and modulators with high speed amplifiers are discussed. Some design considerations for representative subsystems in the GaAs-AlGaAs and GaInAs-InP materials systems are described. Results of a detailed numerical design of an electro-optical birefringent filter for monolithic integration with a laser diode is described, and early experimental results on monolithic integration of broadband MESFET amplifiers with photoconductive detectors are reported.
Monolithically integrated solid state laser and waveguide using spin-on glass
Ashby, C.I.H.; Hohimer, J.P.; Neal, D.R.; Vawter, G.A.
1995-10-31
A monolithically integrated photonic circuit is disclosed combining a semiconductor source of excitation light with an optically active waveguide formed on the substrate. The optically active waveguide is preferably formed of a spin-on glass to which are added optically active materials which can enable lasing action, optical amplification, optical loss, or frequency conversion in the waveguide, depending upon the added material. 4 figs.
Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output
NASA Technical Reports Server (NTRS)
Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)
1994-01-01
A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.
Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array
NASA Technical Reports Server (NTRS)
Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.
2000-01-01
Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.
Monolithic graphene transistor biointerface.
Nam, SungWoo; Lee, Mi-Sun; Park, Jang-Ung
2012-01-01
We report monolithic integration of graphene and graphite for all-carbon integrated bioelectronics. First, we demonstrate that the electrical properties of graphene and graphite can be modulated by controlling the number of graphene layers, and such capabilities allow graphene to be used as active channels and graphite as metallic interconnects for all-carbon bioelectronics. Furthermore, we show that monolithic graphene-graphite devices exhibit mechanical flexibility and robustness while their electrical responses are not perturbed by mechanical deformation, demonstrating their unique electromechanical properties. Chemical sensing capability of all-carbon integrated bioelectronics is manifested in real-time, complementary pH detection. These unique capabilities of our monolithic graphene-graphite bioelectronics could be exploited in chemical and biological detection and conformal interface with biological systems in the future.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Siwak, N. P.; Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740; Fan, X. Z.
2014-10-06
An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We havemore » fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.« less
Space Power Amplification with Active Linearly Tapered Slot Antenna Array
NASA Technical Reports Server (NTRS)
Simons, Rainee N.; Lee, Richard Q.
1993-01-01
A space power amplifier composed of active linearly tapered slot antennas (LTSA's) has been demonstrated and shown to have a gain of 30 dB at 20 GHz. In each of the antenna elements, a GaAs monolithic microwave integrated circuit (MMIC) three-stage power amplifier is integrated with two LTSA's. The LTSA and the MMIC power amplifier has a gain of 11 dB and power added efficiency of 14 percent respectively. The design is suitable for constructing a large array using monolithic integration techniques.
Development of optically pumped DBR-free semiconductor disk lasers (Conference Presentation)
NASA Astrophysics Data System (ADS)
Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Sheik-Bahae, Mansoor
2017-03-01
Semiconductor disk lasers (SDLs) are attractive for applications requiring good beam quality, wavelength versatility, and high output powers. Typical SDLs utilize the active mirror geometry, where a semiconductor DBR is integrated with the active region by growth or post-growth bonding. This imposes restrictions for the SDL design, like material system choice, thermal management, and effective gain bandwidth. In DBR-free geometry, these restrictions can be alleviated. An integrated gain model predicts DBR-free geometry with twice the gain bandwidth of typical SDLs, which has been experimentally verified with active regions near 1 μm and 1.15 μm. The lift-off and bonding technique enables the integration of semiconductor active regions with arbitrary high quality substrates, allowing novel monolithic geometries. Bonding an active region onto a straight side of a commercial fused silica right angle prism, and attaching a high reflectivity mirror onto the hypotenuse side, with quasi CW pumping at 780 nm, lasing operation was achieved at 1037 nm with 0.2 mW average power at 1.6 mW average pump power. Laser dynamics show that thermal lens generation in the active region bottlenecks the laser efficiency. Investigations on total internal reflection based monolithic ring cavities are ongoing. These geometries would allow the intracavity integration of 2D materials or other passive absorbers, which could be relevant for stable mode locking. Unlike typical monolithic microchip SDLs, with the evanescent wave coupling technique, these monolithic geometries allow variable coupling efficiency.
Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R; Castillo, Gabriel R; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng
2014-08-07
Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips.
Recent progress in low-temperature-process monolithic three dimension technology
NASA Astrophysics Data System (ADS)
Yang, Chih-Chao; Hsieh, Tung-Ying; Huang, Wen-Hsien; Shen, Chang-Hong; Shieh, Jia-Min; Yeh, Wen-Kuan; Wu, Meng-Chyi
2018-04-01
Monolithic three-dimension (3D) integration is an ultimate alternative method of fabricating high density, high performance, and multi-functional integrated circuits. It offers the promise of being a new approach to increase system performance. How to manage the thermal impact of multi-tiered processes, such as dopant activation, source/drain silicidation, and channel formation, and to prevent the degradation of pre-existing devices/circuits become key challenges. In this paper, we provide updates on several important monolithic 3D works, particularly in sequentially stackable channels, and our recent achievements in monolithic 3D integrated circuit (3D-IC). These results indicate that the advanced 3D architecture with novel design tools enables ultrahigh-density stackable circuits to have superior performance and low power consumption for future artificial intelligence (AI) and internet of things (IoTs) application.
Liu, Jikun; White, Ian; DeVoe, Don L.
2011-01-01
The use of porous polymer monoliths functionalized with silver nanoparticles is introduced in this work for high-sensitivity surface-enhanced Raman scattering (SERS) detection. Preparation of the SERS detection elements is a simple process comprising the synthesis of a discrete polymer monolith section within a silica capillary, followed by physically trapping silver nanoparticle aggregates within the monolith matrix. A SERS detection limit of 220 fmol for Rhodamine 6G (R6G) is demonstrated, with excellent signal stability over a 24 h period. The capability of the SERS-active monolith for label-free detection of biomolecules was demonstrated by measurements of bradykinin and cyctochrome c. The SERS-active monoliths can be readily integrated into miniaturized micro-total-analysis systems for on-line and label-free detection for a variety of biosensing, bioanalytical, and biomedical applications. PMID:21322579
Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R.; Castillo, Gabriel R.; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng
2014-01-01
Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips. PMID:25100561
Synthesis of Porous Carbon Monoliths Using Hard Templates.
Klepel, Olaf; Danneberg, Nina; Dräger, Matti; Erlitz, Marcel; Taubert, Michael
2016-03-21
The preparation of porous carbon monoliths with a defined shape via template-assisted routes is reported. Monoliths made from porous concrete and zeolite were each used as the template. The porous concrete-derived carbon monoliths exhibited high gravimetric specific surface areas up to 2000 m²·g -1 . The pore system comprised macro-, meso-, and micropores. These pores were hierarchically arranged. The pore system was created by the complex interplay of the actions of both the template and the activating agent as well. On the other hand, zeolite-made template shapes allowed for the preparation of microporous carbon monoliths with a high volumetric specific surface area. This feature could be beneficial if carbon monoliths must be integrated into technical systems under space-limited conditions.
Synthesis of Porous Carbon Monoliths Using Hard Templates
Klepel, Olaf; Danneberg, Nina; Dräger, Matti; Erlitz, Marcel; Taubert, Michael
2016-01-01
The preparation of porous carbon monoliths with a defined shape via template-assisted routes is reported. Monoliths made from porous concrete and zeolite were each used as the template. The porous concrete-derived carbon monoliths exhibited high gravimetric specific surface areas up to 2000 m2·g−1. The pore system comprised macro-, meso-, and micropores. These pores were hierarchically arranged. The pore system was created by the complex interplay of the actions of both the template and the activating agent as well. On the other hand, zeolite-made template shapes allowed for the preparation of microporous carbon monoliths with a high volumetric specific surface area. This feature could be beneficial if carbon monoliths must be integrated into technical systems under space-limited conditions. PMID:28773338
A monolithic integrated photonic microwave filter
NASA Astrophysics Data System (ADS)
Fandiño, Javier S.; Muñoz, Pascual; Doménech, David; Capmany, José
2017-02-01
Meeting the increasing demand for capacity in wireless networks requires the harnessing of higher regions in the radiofrequency spectrum, reducing cell size, as well as more compact, agile and power-efficient base stations that are capable of smoothly interfacing the radio and fibre segments. Fully functional microwave photonic chips are promising candidates in attempts to meet these goals. In recent years, many integrated microwave photonic chips have been reported in different technologies. To the best of our knowledge, none has monolithically integrated all the main active and passive optoelectronic components. Here, we report the first demonstration of a tunable microwave photonics filter that is monolithically integrated into an indium phosphide chip. The reconfigurable radiofrequency photonic filter includes all the necessary elements (for example, lasers, modulators and photodetectors), and its response can be tuned by means of control electric currents. This is an important step in demonstrating the feasibility of integrated and programmable microwave photonic processors.
High-performance silicon photonics technology for telecommunications applications.
Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi
2014-04-01
By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.
High-performance silicon photonics technology for telecommunications applications
Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi
2014-01-01
By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. PMID:27877659
High-performance silicon photonics technology for telecommunications applications
NASA Astrophysics Data System (ADS)
Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi
2014-04-01
By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.
Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof
Skogen, Erik J.
2016-10-25
The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.
High-speed photodiodes for InP-based photonic integrated circuits.
Rouvalis, E; Chtioui, M; Tran, M; Lelarge, F; van Dijk, F; Fice, M J; Renaud, C C; Carpintero, G; Seeds, A J
2012-04-09
We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).
Coplanar monolithic integrated circuits for low-noise communication and radar systems
NASA Astrophysics Data System (ADS)
Bessemoulin, Alexandre; Verweyen, Ludger; Marsetz, Waldemar; Massler, Hermann; Neumann, Markus; Hulsmann, Axel; Schlechtweg, Michael
1999-12-01
This paper presents coplanar millimeter-wave monolithic integrated circuits with high performance and small size for use in low noise communication and radar system applications. Technology and modeling issues with respect to active and passive elements are discussed first. In a second step, the potential of coplanar waveguides to realize compact ICs is illustrated through various design examples, such as low noise amplifiers, mixers and power amplifiers. The performance of multifunctional ICs is also presented by comparing simulated and measured results for a complete 77 GHz Transceive MMIC.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Serne, R. Jeffrey; Westsik, Joseph H.; Williams, Benjamin D.
This report describes the results from long-term laboratory leach tests performed at Pacific Northwest National Laboratory (PNNL) for Washington River Protection Solutions (WRPS) to evaluate the release of key constituents from monoliths of Cast Stone prepared with four simulated low-activity waste (LAW) liquid waste streams. Specific objectives of the Cast Stone long-term leach tests described in this report focused on four activities: 1. Extending the leaching times for selected ongoing EPA-1315 tests on monoliths made with LAW simulants beyond the conventional 63-day time period up to 609 days reported herein (with some tests continuing that will be documented later) inmore » an effort to evaluate long-term leaching properties of Cast Stone to support future performance assessment activities. 2. Starting new EPA-1315 leach tests on archived Cast Stone monoliths made with four LAW simulants using two leachants (deionized water [DIW] and simulated Hanford Integrated Disposal Facility (IDF) Site vadose zone pore water [VZP]). 3. Evaluating the impacts of varying the iodide loading (starting iodide concentrations) in one LAW simulant (7.8 M Na Hanford Tank Waste Operations Simulator (HTWOS) Average) by manufacturing new Cast Stone monoliths and repeating the EPA-1315 leach tests using DIW and the VZP leachants. 4. Evaluating the impacts of using a non-pertechnetate form of Tc that is present in some Hanford tanks. In this activity one LAW simulant (7.8 M Na HTWOS Average) was spiked with a Tc(I)-tricarbonyl gluconate species and then solidified into Cast Stone monoliths. Cured monoliths were leached using the EPA-1315 leach protocol with DIW and VZP. The leach results for the Tc-Gluconate Cast Stone monoliths were compared to Cast Stone monoliths pertechnetate.« less
Optoelectronic devices toward monolithic integration
NASA Astrophysics Data System (ADS)
Ghergia, V.
1992-12-01
Starting from the present state of tl art of discrete devices up to the on going realization of monolithic semicorxtuctor integrated prototypes an overview ofoptoelectronic devices for telecom applications is given inchiding a short classification of the different kind of integrated devices. On the future perspective of IBCN distribution network some economica of hybrid and monolithic forms of integration are attempted. lnaflyashoitpresentationoftheactivitiesperformedintbefieldofmonolithic integration by EEC ESPR1T and RACE projects is reported. 1.
Monolithic microwave integrated circuit devices for active array antennas
NASA Technical Reports Server (NTRS)
Mittra, R.
1984-01-01
Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.
Wu, Fan; Stark, Eran; Ku, Pei-Cheng; Wise, Kensall D.; Buzsáki, György; Yoon, Euisik
2015-01-01
SUMMARY We report a scalable method to monolithically integrate microscopic light emitting diodes (μLEDs) and recording sites onto silicon neural probes for optogenetic applications in neuroscience. Each μLED and recording site has dimensions similar to a pyramidal neuron soma, providing confined emission and electrophysiological recording of action potentials and local field activity. We fabricated and implanted the four-shank probes, each integrated with 12 μLEDs and 32 recording sites, into the CA1 pyramidal layer of anesthetized and freely moving mice. Spikes were robustly induced by 60 nW light power, and fast population oscillations were induced at the microwatt range. To demonstrate the spatiotemporal precision of parallel stimulation and recording, we achieved independent control of distinct cells ~50 μm apart and of differential somatodendritic compartments of single neurons. The scalability and spatiotemporal resolution of this monolithic optogenetic tool provides versatility and precision for cellular-level circuit analysis in deep structures of intact, freely moving animals. PMID:26627311
Monolithic exploding foil initiator
Welle, Eric J; Vianco, Paul T; Headley, Paul S; Jarrell, Jason A; Garrity, J. Emmett; Shelton, Keegan P; Marley, Stephen K
2012-10-23
A monolithic exploding foil initiator (EFI) or slapper detonator and the method for making the monolithic EFI wherein the exploding bridge and the dielectric from which the flyer will be generated are integrated directly onto the header. In some embodiments, the barrel is directly integrated directly onto the header.
Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices
Bi, Lei; Hu, Juejun; Jiang, Peng; Kim, Hyun Suk; Kim, Dong Hun; Onbasli, Mehmet Cengiz; Dionne, Gerald F.; Ross, Caroline A.
2013-01-01
Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4)O3−δ and polycrystalline (CeY2)Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2)Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates. PMID:28788379
NASA Astrophysics Data System (ADS)
Saito, Hideaki; Ogura, Ichiro; Sugimoto, Yoshimasa; Kasahara, Kenichi
1995-05-01
The monolithic incorporation and performance of vertical-cavity surface-emitting lasers (VCSELs) emitting at two distinct wavelengths, which were suited for application to wavelength division multiplexing (WDM) systems were reported. The monolithic integration of two-wavelength VCSEL arrays was achieved by using mask molecular beam epitaxy. This method can generate arrays that have the desired integration area size and wavelength separation.
Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors
NASA Astrophysics Data System (ADS)
Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda
2017-07-01
Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.
Monolithic integrated high-T.sub.c superconductor-semiconductor structure
NASA Technical Reports Server (NTRS)
Barfknecht, Andrew T. (Inventor); Garcia, Graham A. (Inventor); Russell, Stephen D. (Inventor); Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Clayton, Stanley R. (Inventor)
2000-01-01
A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.
A monolithic integrated micro direct methanol fuel cell based on sulfo functionalized porous silicon
NASA Astrophysics Data System (ADS)
Wang, M.; Lu, Y. X.; Liu, L. T.; Wang, X. H.
2016-11-01
In this paper, we demonstrate a monolithic integrated micro direct methanol fuel cell (μDMFC) for the first time. The monolithic integrated μDMFC combines proton exchange membrane (PEM) and Pt nanocatalysts, in which PEM is achieved by the functionalized porous silicon membrane and 3D Pt nanoflowers being synthesized in situ on it as catalysts. Sulfo groups functionalized porous silicon membrane serves as a PEM and a catalyst support simultaneously. The μDMFC prototype achieves an open circuit voltage of 0.3 V, a maximum power density of 5.5 mW/cm2. The monolithic integrated μDMFC offers several desirable features such as compatibility with micro fabrication techniques, an undeformable solid PEM and the convenience of assembly.
Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems
NASA Astrophysics Data System (ADS)
Ku, Walter H.; Gang, Guan-Wan; He, J. Q.; Ichitsubo, I.
1988-05-01
This final technical report presents results on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. New results include analytical and computer aided device models of GaAs MESFETs and HEMTs or MODFETs, new synthesis techniques for monolithic feedback and distributed amplifiers and a new nonlinear CAD program for MIMIC called CADNON. This program incorporates the new MESFET and HEMT model and has been successfully applied to the design of monolithic millimeter-wave mixers.
Microwave monolithic integrated circuit development for future spaceborne phased array antennas
NASA Astrophysics Data System (ADS)
Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.
1983-12-01
The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented highlighting the advantages of distributed amplifier approach compared to the conventional single power source designs.
Microwave monolithic integrated circuit development for future spaceborne phased array antennas
NASA Technical Reports Server (NTRS)
Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.
1983-01-01
The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented highlighting the advantages of distributed amplifier approach compared to the conventional single power source designs.
Monolithically integrated absolute frequency comb laser system
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wanke, Michael C.
2016-07-12
Rather than down-convert optical frequencies, a QCL laser system directly generates a THz frequency comb in a compact monolithically integrated chip that can be locked to an absolute frequency without the need of a frequency-comb synthesizer. The monolithic, absolute frequency comb can provide a THz frequency reference and tool for high-resolution broad band spectroscopy.
Heterogeneous integration of low-temperature metal-oxide TFTs
NASA Astrophysics Data System (ADS)
Schuette, Michael L.; Green, Andrew J.; Leedy, Kevin D.; McCandless, Jonathan P.; Jessen, Gregg H.
2017-02-01
The breadth of circuit fabrication opportunities enabled by metal-oxide thin-film transistors (MO-TFTs) is unprecedented. Large-area deposition techniques and high electron mobility are behind their adoption in the display industry, and substrate agnosticism and low process temperatures enabled the present wave of flexible electronics research. Reports of circuits involving complementaryMO-TFTs, oxide-organic hybrid combinations, and even MO-TFTs integrated onto Si LSI back end of line interconnects demonstrate this technology's utility in 2D and 3D monolithic heterogeneous integration (HI). In addition to a brief literature review focused on functional HI between MO-TFTs and a variety of dissimilar active devices, we share progress toward integrating MO-TFTs with compound semiconductor devices, namely GaN HEMTs. A monolithically integrated cascode topology was used to couple a HEMT's >200 V breakdown characteristic with the gate driving characteristic of an IGZO TFT, effectively shifting the HEMT threshold voltage from -3 V to +1 V.
Foundry fabricated photonic integrated circuit optical phase lock loop.
Bałakier, Katarzyna; Fice, Martyn J; Ponnampalam, Lalitha; Graham, Chris S; Wonfor, Adrian; Seeds, Alwyn J; Renaud, Cyril C
2017-07-24
This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work within a heterodyne optical phase locked loop (OPLL). The PIC and an external electronic circuit were used to phase-lock a single-line semiconductor laser diode to an incoming reference laser, with tuneable frequency offset from 4 GHz to 12 GHz. The PIC contains 33 active and passive components monolithically integrated on a single chip, fully demonstrating the capability of a generic foundry PIC fabrication model. The electronic part of the OPLL consists of commercially available RF components. This semi-packaged system stabilizes the phase and frequency of the integrated laser so that an absolute frequency, high-purity heterodyne signal can be generated when the OPLL is in operation, with phase noise lower than -100 dBc/Hz at 10 kHz offset from the carrier. This is the lowest phase noise level ever demonstrated by monolithically integrated OPLLs.
Microwave monolithic integrated circuit development for future spaceborne phased array antennas
NASA Astrophysics Data System (ADS)
Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.
The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399
Microwave monolithic integrated circuit development for future spaceborne phased array antennas
NASA Technical Reports Server (NTRS)
Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.
1984-01-01
The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399
Vertical Ge photodetector base on InP taper waveguide
NASA Astrophysics Data System (ADS)
Amiri, Iraj Sadegh; Ariannejad, M. M.; Azzuhri, S. R. B.; Anwar, T.; Kouhdaragh, V.; Yupapin, P.
2018-06-01
In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.
Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min
2014-10-20
In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.
Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver.
Shin, Jonghyun; Bhattacharya, Pallab; Xu, Jian; Váró, György
2004-10-01
A monolithically integrated bacteriorhodopsin-semiconductor phototransceiver is demonstrated for the first time to the authors' knowledge. In this novel biophotonic optical interconnect, the input photoexcitation is detected by bacteriorhodopsin (bR) that has been selectively deposited onto the gate of a GaAs-based field-effect transistor. The photovoltage developed across the bR is converted by the transistor into an amplified photocurrent, which drives an integrated light-emitting diode with a Ga0.37Al0.63As active region. Advantage is taken of the high-input impedance of the field-effect transistor, which matches the high internal resistance of bR. The input and output wavelengths are 594 and 655 nm, respectively. The transient response of the optoelectronic circuit to modulated input light has also been studied.
Method for making a monolithic integrated high-T.sub.c superconductor-semiconductor structure
NASA Technical Reports Server (NTRS)
Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Russell, Stephen D. (Inventor); Garcia, Graham A. (Inventor); Barfknecht, Andrew T. (Inventor); Clayton, Stanley R. (Inventor)
2000-01-01
A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.
Integrated device architectures for electrochromic devices
Frey, Jonathan Mack; Berland, Brian Spencer
2015-04-21
This disclosure describes systems and methods for creating monolithically integrated electrochromic devices which may be a flexible electrochromic device. Monolithic integration of thin film electrochromic devices may involve the electrical interconnection of multiple individual electrochromic devices through the creation of specific structures such as conductive pathway or insulating isolation trenches.
Lawson, Shane; Al-Naddaf, Qasim; Krishnamurthy, Anirduh; Amour, Marc St; Griffin, Connor; Rownaghi, Ali A; Knox, James C; Rezaei, Fateme
2018-06-06
Honeycomb monoliths loaded with metal-organic frameworks (MOFs) are highly desirable adsorption contactors because of their low-pressure drop, rapid mass-transfer kinetics, and high-adsorption capacity. Moreover, three-dimensional (3D)-printing technology renders direct material modification a realistic and economic prospect. In this study, 3D printing was utilized to impregnate kaolin-based monolith with UTSA-16 metal formation precursor (Co), whereupon an internal growth was facilitated via a solvothermal synthesis approach. The cobalt weight loading in the kaolin support was varied systematically to optimize the MOF growth while retaining monolith mechanical integrity. The obtained UTSA-16 monolith with 90 wt % loading exhibited similar textural features and adsorption characteristics to its powder analogue while improving upon structural integrity. In comparison to previously developed 3D-printed UTSA-16 monoliths, the UTSA-16-kaolin monolith not only showed higher MOF loading but also higher compression stress, indicative of its robust structure. Furthermore, the 3D-printed UTSA-16-kaolin monolith displayed a comparable CO 2 adsorption capacity to the UTSA-16 powder (3.1 vs 3.5 mmol/g at 25 °C and 1 bar), which was proportional to its loading. Selectivity values of 49, 238, and 3725 were obtained for CO 2 /CH 4 , CO 2 /N 2 , and CO 2 /H 2 , respectively, demonstrating good separation potential of the 3D-printed MOF monolith for various gas mixtures, as determined by both equilibrium and dynamic adsorption measurements. Overall, this study provides a novel route for the fabrication of UTSA-16-loaded monoliths, which demonstrate both high MOF loading and mechanical integrity that could be readily applied to various CO 2 capture applications.
Monolithic integrated optic fiber Bragg grating sensor interrogator
NASA Astrophysics Data System (ADS)
Mendoza, Edgar A.; Esterkin, Yan; Kempen, Cornelia; Sun, Songjian
2010-04-01
Fiber Bragg gratings (FBGs) are a mature sensing technology that has gained rapid acceptance in civil, aerospace, chemical and petrochemical, medicine, aviation and automotive industries. Fiber Bragg grating sensors can be use for a variety of measurements including strain, stress, vibration, acoustics, acceleration, pressure, temperature, moisture, and corrosion distributed at multiple locations within the structure using a single fiber element. The most prominent advantages of FBGs are: small size and light weight, multiple FBG transducers on a single fiber, and immunity to radio frequency interference. A major disadvantage of FBG technology is that conventional state-of-the-art fiber Bragg grating interrogation systems are typically bulky, heavy, and costly bench top instruments that are assembled from off-the-shelf fiber optic and optical components integrated with a signal electronics board into an instrument console. Based on the need for a compact FBG interrogation system, this paper describes recent progress towards the development of a miniature fiber Bragg grating sensor interrogator (FBG-TransceiverTM) system based on multi-channel monolithic integrated optic sensor microchip technology. The integrated optic microchip technology enables the monolithic integration of all of the functionalities, both passive and active, of conventional bench top FBG sensor interrogators systems, packaged in a miniaturized, low power operation, 2-cm x 5-cm small form factor (SFF) package suitable for the long-term structural health monitoring in applications where size, weight, and power are critical for operation.
AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster
NASA Astrophysics Data System (ADS)
Han, Sang-Woo; Jo, Min-Gi; Kim, Hyungtak; Cho, Chun-Hyung; Cha, Ho-Young
2017-08-01
This study investigates the effects of a monolithic gate current booster integrated with an AlGaN/GaN-on-Si power-switching device. The integrated gate current booster was implemented by a single-stage inverter topology consisting of a recessed normally-off AlGaN/GaN MOS-HFET and a mesa resistor. The monolithically integrated gate current booster in a switching FET eliminated the parasitic elements caused by external interconnection and enabled fast switching operation. The gate charging and discharging currents were boosted by the integrated inverter, which significantly reduced both rise and fall times: the rise time was reduced from 626 to 41.26 ns, while the fall time was reduced from 554 to 42.19 ns by the single-stage inverter. When the packaged monolithic power chip was tested under 1 MHz hard-switching operation with VDD = 200 V, the switching loss was found to have been drastically reduced, from 5.27 to 0.55 W.
NASA Astrophysics Data System (ADS)
Onishi, Toshikazu; Imafuji, Osamu; Fukuhisa, Toshiya; Mochida, Atsunori; Kobayashi, Yasuhiro; Yuri, Masaaki; Itoh, Kunio; Shimizu, Hirokazu
2001-11-01
Monolithically integrated 780-nm-band and 650-nm-band self-sustained pulsating (SSP) lasers, which are desirable for simplified optical pickups in digital versatile disk (DVD) systems, have been developed for the first time. The real refractive index guided self-aligned (RISA) waveguide structure is adapted to reduce absorption loss in the current blocking layers. In order to obtain stable SSP, a saturable absorber formed in the active layer outside the current stripe, and a saturable absorbing layer above the active layer are utilized for the 780-nm-band and 650-nm-band laser diodes (LDs), respectively. Relative intensity noise less than -130 dB/Hz is maintained at temperatures of up to 80°C at an output power of 7 mW for the 650 nm band and 10 mW for the 780 nm band, which suggests that stable SSP operations have been realized.
Integrated Broadband Quantum Cascade Laser
NASA Technical Reports Server (NTRS)
Mansour, Kamjou (Inventor); Soibel, Alexander (Inventor)
2016-01-01
A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.
Package Holds Five Monolithic Microwave Integrated Circuits
NASA Technical Reports Server (NTRS)
Mysoor, Narayan R.; Decker, D. Richard; Olson, Hilding M.
1996-01-01
Packages protect and hold monolithic microwave integrated circuit (MMIC) chips while providing dc and radio-frequency (RF) electrical connections for chips undergoing development. Required to be compact, lightweight, and rugged. Designed to minimize undesired resonances, reflections, losses, and impedance mismatches.
CMOS-micromachined, two-dimenisional transistor arrays for neural recording and stimulation.
Lin, J S; Chang, S R; Chang, C H; Lu, S C; Chen, H
2007-01-01
In-plane microelectrode arrays have proven to be useful tools for studying the connectivities and the functions of neural tissues. However, seldom microelectrode arrays are monolithically-integrated with signal-processing circuits, without which the maximum number of electrodes is limited by the compromise with routing complexity and interferences. This paper proposes a CMOS-compatible, two-dimensional array of oxide-semiconductor field-effect transistors(OSFETs), capable of both recording and stimulating neuronal activities. The fabrication of the OSFETs not only requires simply die-level, post-CMOS micromachining process, but also retains metal layers for monolithic integration with signal-processing circuits. A CMOS microsystem containing the OSFET arrays and gain-programmable recording circuits has been fabricated and tested. The preliminary testing results are presented and discussed.
GaAs MMIC elements in phased-array antennas
NASA Technical Reports Server (NTRS)
Leonard, Regis F.
1988-01-01
Over the last six years NASA Lewis Research Center has carried out a program aimed at the development of advanced monolithic microwave integrated circuit technology, principally for use in phased-array antenna applications. Arising out of the Advanced Communications Technology Satellite (ACTS) program, the initial targets of the program were chips which operated at 30 and 20 GHz. Included in this group of activities were monolithic power modules with an output of 2 watts at GHz, variable phase shifters at both 20 and 30 GHz, low noise technology at 30 GHz, and a fully integrated (phase shifter, variable gain amplifier, power amplifier) transmit module at 20 GHz. Subsequent developments are centered on NASA mission requirements, particularly Space Station communications systems and deep space data communications.
Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays
NASA Technical Reports Server (NTRS)
Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.
1985-01-01
Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.
Ghezzi, Diego; Vazquez, Rebeca Martinez; Osellame, Roberto; Valtorta, Flavia; Pedrocchi, Alessandra; Valle, Giuseppe Della; Ramponi, Roberta; Ferrigno, Giancarlo; Cerullo, Giulio
2008-10-23
Flash photolysis of caged compounds is one of the most powerful approaches to investigate the dynamic response of living cells. Monolithically integrated devices suitable for optical uncaging are in great demand since they greatly simplify the experiments and allow their automation. Here we demonstrate the fabrication of an integrated bio-photonic device for the optical release of caged compounds. Such a device is fabricated using femtosecond laser micromachining of a glass substrate. More in detail, femtosecond lasers are used both to cut the substrate in order to create a pit for cell growth and to inscribe optical waveguides for spatially selective uncaging of the compounds present in the culture medium. The operation of this monolithic bio-photonic device is tested using both free and caged fluorescent compounds to probe its capability of multipoint release and optical sensing. Application of this device to the study of neuronal network activity can be envisaged.
Carbon-Based Honeycomb Monoliths for Environmental Gas-Phase Applications
Moreno-Castilla, Carlos; Pérez-Cadenas, Agustín F.
2010-01-01
Honeycomb monoliths consist of a large number of parallel channels that provide high contact efficiencies between the monolith and gas flow streams. These structures are used as adsorbents or supports for catalysts when large gas volumes are treated, because they offer very low pressure drop, short diffusion lengths and no obstruction by particulate matter. Carbon-based honeycomb monoliths can be integral or carbon-coated ceramic monoliths, and they take advantage of the versatility of the surface area, pore texture and surface chemistry of carbon materials. Here, we review the preparation methods of these monoliths, their characteristics and environmental applications.
Wang, Sibo; Ren, Zheng; Guo, Yanbing; ...
2016-03-21
We report the scalable three-dimensional (3-D) integration of functional nanostructures into applicable platforms represents a promising technology to meet the ever-increasing demands of fabricating high performance devices featuring cost-effectiveness, structural sophistication and multi-functional enabling. Such an integration process generally involves a diverse array of nanostructural entities (nano-entities) consisting of dissimilar nanoscale building blocks such as nanoparticles, nanowires, and nanofilms made of metals, ceramics, or polymers. Various synthetic strategies and integration methods have enabled the successful assembly of both structurally and functionally tailored nano-arrays into a unique class of monolithic devices. The performance of nano-array based monolithic devices is dictated bymore » a few important factors such as materials substrate selection, nanostructure composition and nano-architecture geometry. Therefore, the rational material selection and nano-entity manipulation during the nano-array integration process, aiming to exploit the advantageous characteristics of nanostructures and their ensembles, are critical steps towards bridging the design of nanostructure integrated monolithic devices with various practical applications. In this article, we highlight the latest research progress of the two-dimensional (2-D) and 3-D metal and metal oxide based nanostructural integrations into prototype devices applicable with ultrahigh efficiency, good robustness and improved functionality. Lastly, selective examples of nano-array integration, scalable nanomanufacturing and representative monolithic devices such as catalytic converters, sensors and batteries will be utilized as the connecting dots to display a roadmap from hierarchical nanostructural assembly to practical nanotechnology implications ranging from energy, environmental, to chemical and biotechnology areas.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Sibo; Ren, Zheng; Guo, Yanbing
We report the scalable three-dimensional (3-D) integration of functional nanostructures into applicable platforms represents a promising technology to meet the ever-increasing demands of fabricating high performance devices featuring cost-effectiveness, structural sophistication and multi-functional enabling. Such an integration process generally involves a diverse array of nanostructural entities (nano-entities) consisting of dissimilar nanoscale building blocks such as nanoparticles, nanowires, and nanofilms made of metals, ceramics, or polymers. Various synthetic strategies and integration methods have enabled the successful assembly of both structurally and functionally tailored nano-arrays into a unique class of monolithic devices. The performance of nano-array based monolithic devices is dictated bymore » a few important factors such as materials substrate selection, nanostructure composition and nano-architecture geometry. Therefore, the rational material selection and nano-entity manipulation during the nano-array integration process, aiming to exploit the advantageous characteristics of nanostructures and their ensembles, are critical steps towards bridging the design of nanostructure integrated monolithic devices with various practical applications. In this article, we highlight the latest research progress of the two-dimensional (2-D) and 3-D metal and metal oxide based nanostructural integrations into prototype devices applicable with ultrahigh efficiency, good robustness and improved functionality. Lastly, selective examples of nano-array integration, scalable nanomanufacturing and representative monolithic devices such as catalytic converters, sensors and batteries will be utilized as the connecting dots to display a roadmap from hierarchical nanostructural assembly to practical nanotechnology implications ranging from energy, environmental, to chemical and biotechnology areas.« less
MMIC devices for active phased array antennas
NASA Technical Reports Server (NTRS)
Mittra, R.
1986-01-01
The use of finlines for microwave monolithic integrated circuit application in the 20 to 40 GHz frequency range. Other wave guiding structures, are also examined from a comparative point of view and some sonclusions are drawn on the basis of the results.
Baeza, Mireia; López, Carmen; Alonso, Julián; López-Santín, Josep; Alvaro, Gregorio
2010-02-01
Low-temperature cofired ceramics (LTCC) technology is a versatile fabrication technique used to construct microflow systems. It permits the integration of several unitary operations (pretreatment, separation, (bio)chemical reaction, and detection stage) of an analytical process in a modular or monolithic way. Moreover, because of its compatibility with biological material, LTCC is adequate for analytical applications based on enzymatic reactions. Here we present the design, construction, and evaluation of a LTCC microfluidic system that integrates a microreactor (internal volume, 24.28 microL) with an immobilized beta-galactosidase from Escherichia coli (0.479 activity units) and an optical flow cell to measure the product of the enzymatic reaction. The enzyme was immobilized on a glyoxal-agarose support, maintaining its activity along the time of the study. As a proof of concept, the LTCC-beta-galactosidase system was tested by measuring the conversion of ortho-nitrophenyl beta-D-galactopyranoside, the substrate usually employed for activity determinations. Once packed in a monolithically integrated microcolumn, the miniaturized flow system was characterized, the operational conditions optimized (flow rate and injection volume), and its performance successfully evaluated by determining the beta-galactosidase substrate concentration at the millimolar level.
Khuri-Yakub, B T; Oralkan, Omer; Nikoozadeh, Amin; Wygant, Ira O; Zhuang, Steve; Gencel, Mustafa; Choe, Jung Woo; Stephens, Douglas N; de la Rama, Alan; Chen, Peter; Lin, Feng; Dentinger, Aaron; Wildes, Douglas; Thomenius, Kai; Shivkumar, Kalyanam; Mahajan, Aman; Seo, Chi Hyung; O'Donnell, Matthew; Truong, Uyen; Sahn, David J
2010-01-01
Capacitive micromachined ultrasonic transducer (CMUT) arrays are conveniently integrated with frontend integrated circuits either monolithically or in a hybrid multichip form. This integration helps with reducing the number of active data processing channels for 2D arrays. This approach also preserves the signal integrity for arrays with small elements. Therefore CMUT arrays integrated with electronic circuits are most suitable to implement miniaturized probes required for many intravascular, intracardiac, and endoscopic applications. This paper presents examples of miniaturized CMUT probes utilizing 1D, 2D, and ring arrays with integrated electronics.
NASA Astrophysics Data System (ADS)
Yang, Y. J.; Dziura, T. G.; Bardin, T.; Wang, S. C.; Fernandez, R.; Liao, Andrew S. H.
1993-02-01
Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy at the same time. The VCSELs with a 10-micron diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (CW) maximum power of 1.1 mW. The MESFETs with a 3-micron gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.
Optical detectors for GaAs MMIC integration: Technology assessment
NASA Technical Reports Server (NTRS)
Claspy, P. C.; Bhasin, K. B.
1989-01-01
Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.
Monolithic optical phased-array transceiver in a standard SOI CMOS process.
Abediasl, Hooman; Hashemi, Hossein
2015-03-09
Monolithic microwave phased arrays are turning mainstream in automotive radars and high-speed wireless communications fulfilling Gordon Moores 1965 prophecy to this effect. Optical phased arrays enable imaging, lidar, display, sensing, and holography. Advancements in fabrication technology has led to monolithic nanophotonic phased arrays, albeit without independent phase and amplitude control ability, integration with electronic circuitry, or including receive and transmit functions. We report the first monolithic optical phased array transceiver with independent control of amplitude and phase for each element using electronic circuitry that is tightly integrated with the nanophotonic components on one substrate using a commercial foundry CMOS SOI process. The 8 × 8 phased array chip includes thermo-optical tunable phase shifters and attenuators, nano-photonic antennas, and dedicated control electronics realized using CMOS transistors. The complex chip includes over 300 distinct optical components and over 74,000 distinct electrical components achieving the highest level of integration for any electronic-photonic system.
1.3-microm optically-pumped semiconductor disk laser by wafer fusion.
Lyytikäinen, Jari; Rautiainen, Jussi; Toikkanen, Lauri; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G
2009-05-25
We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 microm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 degrees C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.
NASA Astrophysics Data System (ADS)
Latkowski, S.; van Veldhoven, P. J.; Hänsel, A.; D'Agostino, D.; Rabbani-Haghighi, H.; Docter, B.; Bhattacharya, N.; Thijs, P. J. A.; Ambrosius, H. P. M. M.; Smit, M. K.; Williams, K. A.; Bente, E. A. J. M.
2017-02-01
In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar, but-joint, active-passive integration on indium phosphide substrate with active components based on strained InGaAs quantum wells. Using this limited set of basic building blocks a novel geometry, widely tunable laser source was designed and fabricated within the first long wavelength multiproject wafer run. The fabricated laser operates around 2027 nm, covers a record tuning range of 31 nm and is successfully employed in absorption measurements of carbon dioxide. These results demonstrate a fully functional long wavelength photonic integrated circuit that operates at these wavelengths. Moreover, the process steps and material system used for the long wavelength technology are almost identical to the ones which are used in the technology process at 1.5μm which makes it straightforward and hassle-free to transfer to the photonic foundries with existing fabrication lines. The changes from the 1550 nm technology and the trade-offs made in the building block design and layer stack will be discussed.
EML Array fabricated by SAG technique monolithically integrated with a buried ridge AWG multiplexer
NASA Astrophysics Data System (ADS)
Xu, Junjie; Liang, Song; Zhang, Zhike; An, Junming; Zhu, Hongliang; Wang, Wei
2017-06-01
We report the fabrication of a ten channel electroabsorption modulated DFB laser (EML) array. Different emission wavelengths of the laser array are obtained by selective area growth (SAG) technique, which is also used for the integration of electroabsorption modulators (EAM) with the lasers. An arrayed waveguide grating (AWG) combiner is integrated monolithically with the laser array by butt-joint regrowth (BJR) technique. A buried ridge waveguide structure is adopted for the AWG combiner. A self aligned fabrication procedure is adopted for the fabrication of the waveguide structure of the device to eliminate the misalignment between the laser active waveguide and the passive waveguide. A Ti thin film heater is integrated for each laser in the array. With the help of the heaters, ten laser emissions with 1.8 nm channel spacing are obtained. The integrated EAM has a larger than 11 dB static extinction ratios and larger than 8 GHz small signal modulation bandwidths. The light power collected in the output waveguide of the AWG is larger than -13 dBm for each wavelength.
Monolithically Integrated Mid-Infrared Quantum Cascade Laser and Detector
Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried
2013-01-01
We demonstrate the monolithic integration of a mid-infrared laser and detector utilizing a bi-functional quantum cascade active region. When biased, this active region provides optical gain, while it can be used as a detector at zero bias. With our novel approach we can measure the light intensity of the laser on the same chip without the need of external lenses or detectors. Based on a bound-to-continuum design, the bi-functional active region has an inherent broad electro-luminescence spectrum of 200 cm−1, which indicate sits use for single mode laser arrays. We have measured a peak signal of 191.5 mV at theon-chip detector, without any amplification. The room-temperature pulsed emission with an averaged power consumption of 4 mW and the high-speed detection makes these devices ideal for low-power sensors. The combination of the on-chip detection functionality, the broad emission spectrum and the low average power consumption indicates the potential of our bi-functional quantum cascade structures to build a mid-infrared lab-on-a-chip based on quantum cascade laser technology. PMID:23389348
Monolithic Microwave Integrated Circuits Based on GaAs Mesfet Technology
NASA Astrophysics Data System (ADS)
Bahl, Inder J.
Advanced military microwave systems are demanding increased integration, reliability, radiation hardness, compact size and lower cost when produced in large volume, whereas the microwave commercial market, including wireless communications, mandates low cost circuits. Monolithic Microwave Integrated Circuit (MMIC) technology provides an economically viable approach to meeting these needs. In this paper the design considerations for several types of MMICs and their performance status are presented. Multifunction integrated circuits that advance the MMIC technology are described, including integrated microwave/digital functions and a highly integrated transceiver at C-band.
NASA Astrophysics Data System (ADS)
Reckziegel, S.; Kreye, D.; Puegner, T.; Vogel, U.; Scholles, M.; Grillberger, C.; Fehse, K.
2009-02-01
In this paper we present an optoelectronic integrated circuit (OEIC) based on monolithic integration of organic lightemitting diodes (OLEDs) and CMOS technology. By the use of integrated circuits, photodetectors and highly efficient OLEDs on the same silicon chip, novel OEICs with combined sensors and actuating elements can be realized. The OLEDs are directly deposited on the CMOS top metal. The metal layer serves as OLED bottom electrode and determines the bright area. Furthermore, the area below the OLED electrodes can be used for integrated circuits. The monolithic integration of actuators, sensors and electronics on a common silicon substrate brings significant advantages in most sensory applications. The developed OEIC combines three different types of sensors: a reflective sensor, a color sensor and a particle flow sensor and is configured with an orange (597nm) emitting p-i-n OLED. We describe the architecture of such a monolithic OEIC and demonstrate a method to determine the velocity of a fluid being conveyed pneumatically in a transparent capillary. The integrated OLEDs illuminate the capillary with the flowing fluid. The fluid has a random reflection profile. Depending on the velocity and a random contrast difference, more or less light is reflected back to the substrate. The integrated photodiodes located at different fixed points detect the reflected light and using crosscorrelation, the velocity is calculated from the time in which contrast differences move over a fixed distance.
NASA Astrophysics Data System (ADS)
Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.
2016-03-01
At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.
Cho, Hong-Jun; Lee, Sung-Jin; Park, Sung-Jun; Paik, Chang H; Lee, Sang-Myung; Kim, Sehoon; Lee, Yoon-Sik
2016-09-10
A disulfide-bridged cyclic RGD peptide, named iRGD (internalizing RGD, c(CRGDK/RGPD/EC)), is known to facilitate tumor targeting as well as tissue penetration. After the RGD motif-induced targeting on αv integrins expressed near tumor tissue, iRGD encounters proteolytic cleavage to expose the CendR motif that promotes penetration into cancer cells via the interaction with neuropilin-1. Based on these proteolytic cleavage and internalization mechanism, we designed an iRGD-based monolithic imaging probe that integrates multiple functions (cancer-specific targeting, internalization and fluorescence activation) within a small peptide framework. To provide the capability of activatable fluorescence signaling, we conjugated a fluorescent dye to the N-terminal of iRGD, which was linked to the internalizing sequence (CendR motif), and a quencher to the opposite C-terminal. It turned out that fluorescence activation of the dye/quencher-conjugated monolithic peptide probe requires dual (reductive and proteolytic) cleavages on both disulfide and amide bond of iRGD peptide. Furthermore, the cleavage of the iRGD peptide leading to fluorescence recovery was indeed operative depending on the tumor-related angiogenic receptors (αvβ3 integrin and neuropilin-1) in vitro as well as in vivo. Compared to an 'always fluorescent' iRGD control probe without quencher conjugation, the dye/quencher-conjugated activatable monolithic peptide probe visualized tumor regions more precisely with lower background noise after intravenous injection, owing to the multifunctional responses specific to tumor microenvironment. All these results, along with minimal in vitro and in vivo toxicity profiles, suggest potential of the iRGD-based activatable monolithic peptide probe as a promising imaging agent for precise tumor diagnosis. Copyright © 2016 Elsevier B.V. All rights reserved.
Gallium Arsenide Monolithic Optoelectronic Circuits
NASA Astrophysics Data System (ADS)
Bar-Chaim, N.; Katz, J.; Margalit, S.; Ury, I.; Wilt, D.; Yariv, A.
1981-07-01
The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.
Khuri-Yakub, B. (Pierre) T.; Oralkan, Ömer; Nikoozadeh, Amin; Wygant, Ira O.; Zhuang, Steve; Gencel, Mustafa; Choe, Jung Woo; Stephens, Douglas N.; de la Rama, Alan; Chen, Peter; Lin, Feng; Dentinger, Aaron; Wildes, Douglas; Thomenius, Kai; Shivkumar, Kalyanam; Mahajan, Aman; Seo, Chi Hyung; O’Donnell, Matthew; Truong, Uyen; Sahn, David J.
2010-01-01
Capacitive micromachined ultrasonic transducer (CMUT) arrays are conveniently integrated with frontend integrated circuits either monolithically or in a hybrid multichip form. This integration helps with reducing the number of active data processing channels for 2D arrays. This approach also preserves the signal integrity for arrays with small elements. Therefore CMUT arrays integrated with electronic circuits are most suitable to implement miniaturized probes required for many intravascular, intracardiac, and endoscopic applications. This paper presents examples of miniaturized CMUT probes utilizing 1D, 2D, and ring arrays with integrated electronics. PMID:21097106
Low noise InP-based MMIC receivers for W-band
NASA Technical Reports Server (NTRS)
Leonard, Regis F.
1991-01-01
A program to develop a monolithic W-band low noise amplifier (a critical element in any W-band communications, sensors, or radar application) is described. Goals of the program include a completely monolithic low noise amplifier, less than a 3.5 dB noise figure, and a monolithic mixer suitable for integration with the LNA.
The Impact of Software Structure and Policy on CPU and Memory System Performance
1994-05-01
Mach 3.0 is that Ultrix is a monolithic or integrated system, and Mach 3.0 is a microkernel or kernelized system. In a monolithic system, all system...services are implemented in a single system context, the monolithic kernel . In a microkernel system such as Mach 3.0, primitive abstractions such as...separate protection domain as a server. Many current operating system text books discuss microkernel and monolithic kernel design. (See [17, 73, 77].) The
Monolithic FET structures for high-power control component applications
NASA Astrophysics Data System (ADS)
Shifrin, Mitchell B.; Katzin, Peter J.; Ayasli, Yalcin
1989-12-01
A monolithic FET switch is described that can be integrated with other monolithic functions or used as a discrete component in a microwave integrated circuit structure. This device increases the power-handling capability of the conventional single FET switch by an order of magnitude. It does this by overcoming the breakdown voltage limitation of the FET device. The design, fabrication, and performance of two high-power control components using these circuits are described as examples of the implementation of this technology. They are an L-band terminated single-pole, single-throw (SPST) switch and an L-band limiter).
Sun, Xiuhua; Yang, Weichun; Pan, Tao; Woolley, Adam T
2008-07-01
Immunoaffinity monolith pretreatment columns have been coupled with capillary electrophoresis separation in poly(methyl methacrylate) (PMMA) microchips. Microdevices were designed with eight reservoirs to enable the electrically controlled transport of selected analytes and solutions to carry out integrated immunoaffinity extraction and electrophoretic separation. The PMMA microdevices were fabricated reproducibly and with high fidelity by solvent imprinting and thermal bonding methods. Monoliths with epoxy groups for antibody immobilization were prepared by direct in situ photopolymerization of glycidyl methacrylate and ethylene glycol dimethacrylate in a porogenic solvent consisting of 70% 1-dodecanol and 30% cyclohexanol. Antifluorescein isothiocyanate was utilized as a model affinity group in the monoliths, and the immobilization process was optimized. A mean elution efficiency of 92% was achieved for the monolith-based extraction of fluorescein isothiocyanate (FITC)-tagged human serum albumin. FITC-tagged proteins were purified from a contaminant protein and then separated electrophoretically using these devices. The developed immunoaffinity column/capillary electrophoresis microdevices show great promise for combining sample pretreatment and separation in biomolecular analysis.
Sun, Xiuhua; Yang, Weichun; Pan, Tao; Woolley, Adam T.
2008-01-01
Immunoaffinity monolith pretreatment columns have been coupled with capillary electrophoresis separation in poly(methyl methacrylate) (PMMA) microchips. Microdevices were designed with 8 reservoirs to enable the electrically controlled transport of selected analytes and solutions to carry out integrated immunoaffinity extraction and electrophoretic separation. The PMMA microdevices were fabricated reproducibly and with high fidelity by solvent imprinting and thermal bonding methods. Monoliths with epoxy groups for antibody immobilization were prepared by direct in-situ photopolymerization of glycidyl methacrylate and ethylene dimethacrylate in a porogenic solvent consisting of 70% dodecanol and 30% hexanol. Anti-fluorescein isothiocyanate (FITC) was utilized as a model affinity group in the monoliths, and the immobilization process was optimized. A mean elution efficiency of 92% was achieved for the monolith-based extraction of FITC-tagged human serum albumin. FITC-tagged proteins were purified from a contaminant protein and then separated electrophoretically using these devices. The developed immunoaffinity column/capillary electrophoresis microdevices show great promise for combining sample pretreatment and separation in biomolecular analysis. PMID:18479142
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yu, Xin; Arbabi, Ehsan; Goddard, Lynford L.
2015-07-20
We demonstrate a self-rolled-up microtube-based vertical photonic coupler monolithically integrated on top of a ridge waveguide to achieve three-dimensional (3D) photonic integration. The fabrication process is fully compatible with standard planar silicon processing technology. Strong light coupling between the vertical coupler and the ridge waveguide was observed experimentally, which may provide an alternative route for 3D heterogeneous photonic integration. The highest extinction ratio observed in the transmission spectrum passing through the ridge waveguide was 23 dB.
Monolithic integration of a plasmonic sensor with CMOS technology
NASA Astrophysics Data System (ADS)
Shakoor, Abdul; Cheah, Boon C.; Hao, Danni; Al-Rawhani, Mohammed; Nagy, Bence; Grant, James; Dale, Carl; Keegan, Neil; McNeil, Calum; Cumming, David R. S.
2017-02-01
Monolithic integration of nanophotonic sensors with CMOS detectors can transform the laboratory based nanophotonic sensors into practical devices with a range of applications in everyday life. In this work, by monolithically integrating an array of gold nanodiscs with the CMOS photodiode we have developed a compact and miniaturized nanophotonic sensor system having direct electrical read out. Doing so eliminates the need of expensive and bulky laboratory based optical spectrum analyzers used currently for measurements of nanophotonic sensor chips. The experimental optical sensitivity of the gold nanodiscs is measured to be 275 nm/RIU which translates to an electrical sensitivity of 5.4 V/RIU. This integration of nanophotonic sensors with the CMOS electronics has the potential to revolutionize personalized medical diagnostics similar to the way in which the CMOS technology has revolutionized the electronics industry.
Ghezzi, Diego; Vazquez, Rebeca Martinez; Osellame, Roberto; Valtorta, Flavia; Pedrocchi, Alessandra; Valle, Giuseppe Della; Ramponi, Roberta; Ferrigno, Giancarlo; Cerullo, Giulio
2008-01-01
Flash photolysis of caged compounds is one of the most powerful approaches to investigate the dynamic response of living cells. Monolithically integrated devices suitable for optical uncaging are in great demand since they greatly simplify the experiments and allow their automation. Here we demonstrate the fabrication of an integrated bio-photonic device for the optical release of caged compounds. Such a device is fabricated using femtosecond laser micromachining of a glass substrate. More in detail, femtosecond lasers are used both to cut the substrate in order to create a pit for cell growth and to inscribe optical waveguides for spatially selective uncaging of the compounds present in the culture medium. The operation of this monolithic bio-photonic device is tested using both free and caged fluorescent compounds to probe its capability of multipoint release and optical sensing. Application of this device to the study of neuronal network activity can be envisaged. PMID:27873888
Renard, Charles; Molière, Timothée; Cherkashin, Nikolay; Alvarez, José; Vincent, Laetitia; Jaffré, Alexandre; Hallais, Géraldine; Connolly, James Patrick; Mencaraglia, Denis; Bouchier, Daniel
2016-05-04
Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm(-2) for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III-V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.
Hybridization of active and passive elements for planar photonic components and interconnects
NASA Astrophysics Data System (ADS)
Pearson, M.; Bidnyk, S.; Balakrishnan, A.
2007-02-01
The deployment of Passive Optical Networks (PON) for Fiber-to-the-Home (FTTH) applications currently represents the fastest growing sector of the telecommunication industry. Traditionally, FTTH transceivers have been manufactured using commodity bulk optics subcomponents, such as thin film filters (TFFs), micro-optic collimating lenses, TO-packaged lasers, and photodetectors. Assembling these subcomponents into a single housing requires active alignment and labor-intensive techniques. Today, the majority of cost reducing strategies using bulk subcomponents has been implemented making future reductions in the price of manufacturing FTTH transceivers unlikely. Future success of large scale deployments of FTTH depends on further cost reductions of transceivers. Realizing the necessity of a radically new packaging approach for assembly of photonic components and interconnects, we designed a novel way of hybridizing active and passive elements into a planar lightwave circuit (PLC) platform. In our approach, all the filtering components were monolithically integrated into the chip using advancements in planar reflective gratings. Subsequently, active components were passively hybridized with the chip using fully-automated high-capacity flip-chip bonders. In this approach, the assembly of the transceiver package required no active alignment and was readily suitable for large-scale production. This paper describes the monolithic integration of filters and hybridization of active components in both silica-on-silicon and silicon-on-insulator PLCs.
Silicon millimetre-wave integrated-circuit (SIMMWIC) SPST switch
NASA Astrophysics Data System (ADS)
Stabile, P. J.; Rosen, A.
1984-10-01
The first silicon millimetre-wave integrated circuit (SIMMWIC) has been successfully fabricated. This circuit is a monolithic SPST switch with a 3 dB bandwidth of 20 percent and a minimum isolation of 21.6 dB across the band (centre frequency is 36.75 GHz). This monolithic circuit is a low-cost reproducible building block for all millimetre-wave control applications.
Zhang, Haiyang; Ou, Junjie; Wei, Yinmao; Wang, Hongwei; Liu, Zhongshan; Zou, Hanfa
2016-04-01
A hybrid fluorous monolithic column was simply prepared via photo-initiated free radical polymerization of an acrylopropyl polyhedral oligomeric silsesquioxane (acryl-POSS) and a perfluorous monomer (2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoroheptyl acrylate) in UV-transparent fused-silica capillaries within 5min. The physical characterization of hybrid fluorous monolith, including scanning electron microscopy (SEM), Fourier transform infrared (FT-IR) spectroscopy, mercury intrusion porosimetry (MIP) and nitrogen adsorption/desorption measurement was performed. Chromatographic performance was also evaluated by capillary liquid chromatography (cLC). Due to the fluorous-fluorous interaction between fluorous monolith and analytes, fluorobenzenes could well be separated, and the column efficiencies reached 86,600-92,500plates/m at the velocity of 0.87mm/s for alkylbenzenes and 51,900-76,000plates/m at the velocity of 1.10mm/s for fluorobenzenes. Meanwhile, an approach to integrate nanoelectrospray ionization (ESI) emitter with hybrid fluorous monolithic column was developed for quantitative determination of perfluoroalkyl acids by nanoHPLC-ESI-MS/MS. The integration design could minimize extracolumn volume, thus excluding undesirable peak broadening and improving separation performance. Copyright © 2016 Elsevier B.V. All rights reserved.
Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems
NASA Astrophysics Data System (ADS)
Ku, Walter H.
1989-05-01
The objectives of this research are to develop analytical and computer aided design techniques for monolithic microwave and millimeter wave integrated circuits (MMIC and MIMIC) and subsystems and to design and fabricate those ICs. Emphasis was placed on heterojunction-based devices, especially the High Electron Mobility Transition (HEMT), for both low noise and medium power microwave and millimeter wave applications. Circuits to be considered include monolithic low noise amplifiers, power amplifiers, and distributed and feedback amplifiers. Interactive computer aided design programs were developed, which include large signal models of InP MISFETs and InGaAs HEMTs. Further, a new unconstrained optimization algorithm POSM was developed and implemented in the general Analysis and Design program for Integrated Circuit (ADIC) for assistance in the design of largesignal nonlinear circuits.
Lo, Mu-Chieh; Guzmán, Robinson; Gordón, Carlos; Carpintero, Guillermo
2017-04-15
This Letter presents a photonics-based millimeter wave and terahertz frequency synthesizer using a monolithic InP photonic integrated circuit composed of a mode-locked laser (MLL) and two pulse interleaver stages to multiply the repetition rate frequency. The MLL is a multiple colliding pulse MLL producing an 80 GHz repetition rate pulse train. Through two consecutive monolithic pulse interleaver structures, each doubling the repetition rate, we demonstrate the achievement of 160 and 320 GHz. The fabrication was done on a multi-project wafer run of a generic InP photonic technology platform.
Hydrogel coated monoliths for enzymatic hydrolysis of penicillin G
Smeltink, M. W.; Straathof, A. J. J.; Paasman, M. A.; van de Sandt, E. J. A. X.; Kapteijn, F.; Moulijn, J. A.
2008-01-01
The objective of this work was to develop a hydrogel-coated monolith for the entrapment of penicillin G acylase (E. coli, PGA). After screening of different hydrogels, chitosan was chosen as the carrier material for the preparation of monolithic biocatalysts. This protocol leads to active immobilized biocatalysts for the enzymatic hydrolysis of penicillin G (PenG). The monolithic biocatalyst was tested in a monolith loop reactor (MLR) and compared with conventional reactor systems using free PGA, and a commercially available immobilized PGA. The optimal immobilization protocol was found to be 5 g l−1 PGA, 1% chitosan, 1.1% glutaraldehyde and pH 7. Final PGA loading on glass plates was 29 mg ml−1 gel. For 400 cpsi monoliths, the final PGA loading on functionalized monoliths was 36 mg ml−1 gel. The observed volumetric reaction rate in the MLR was 0.79 mol s−1 m−3monolith. Apart from an initial drop in activity due to wash out of PGA at higher ionic strength, no decrease in activity was observed after five subsequent activity test runs. The storage stability of the biocatalysts is at least a month without loss of activity. Although the monolithic biocatalyst as used in the MLR is still outperformed by the current industrial catalyst (immobilized preparation of PGA, 4.5 mol s−1 m−3catalyst), the rate per gel volume is slightly higher for monolithic catalysts. Good activity and improved mechanical strength make the monolithic bioreactor an interesting alternative that deserves further investigation for this application. Although moderate internal diffusion limitations have been observed inside the gel beads and in the gel layer on the monolith channel, this is not the main reason for the large differences in reactor performance that were observed. The pH drop over the reactor as a result of the chosen method for pH control results in a decreased performance of both the MLR and the packed bed reactor compared to the batch system. A different reactor configuration including an optimal pH profile is required to increase the reactor performance. The monolithic stirrer reactor would be an interesting alternative to improve the performance of the monolith-PGA combination. PMID:18427849
Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system
NASA Astrophysics Data System (ADS)
Liu, Yang; Wang, Sheng; Liu, Huaping; Peng, Lian-Mao
2017-06-01
Single material-based monolithic optoelectronic integration with complementary metal oxide semiconductor-compatible signal processing circuits is one of the most pursued approaches in the post-Moore era to realize rapid data communication and functional diversification in a limited three-dimensional space. Here, we report an electrically driven carbon nanotube-based on-chip three-dimensional optoelectronic integrated circuit. We demonstrate that photovoltaic receivers, electrically driven transmitters and on-chip electronic circuits can all be fabricated using carbon nanotubes via a complementary metal oxide semiconductor-compatible low-temperature process, providing a seamless integration platform for realizing monolithic three-dimensional optoelectronic integrated circuits with diversified functionality such as the heterogeneous AND gates. These circuits can be vertically scaled down to sub-30 nm and operates in photovoltaic mode at room temperature. Parallel optical communication between functional layers, for example, bottom-layer digital circuits and top-layer memory, has been demonstrated by mapping data using a 2 × 2 transmitter/receiver array, which could be extended as the next generation energy-efficient signal processing paradigm.
Optimization of monolithic columns for microfluidic devices
NASA Astrophysics Data System (ADS)
Pagaduan, Jayson V.; Yang, Weichun; Woolley, Adam T.
2011-06-01
Monolithic columns offer advantages as solid-phase extractors because they offer high surface area that can be tailored to a specific function, fast mass transport, and ease of fabrication. Porous glycidyl methacrylate-ethylene glycol dimethacrylate monoliths were polymerized in-situ in microfluidic devices, without pre-treatment of the poly(methyl methacrylate) channel surface. Cyclohexanol, 1-dodecanol and Tween 20 were used to control the pore size of the monoliths. The epoxy groups on the monolith surface can be utilized to immobilize target-specific probes such as antibodies, aptamers, or DNA for biomarker detection. Microfluidic devices integrated with solid-phase extractors should be useful for point-of-care diagnostics in detecting specific biomarkers from complex biological fluids.
MMIC technology for advanced space communications systems
NASA Astrophysics Data System (ADS)
Downey, A. N.; Connolly, D. J.; Anzic, G.
The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed. Millimeter wavelength MMIC applications and technology for communications systems are discussed. Passive and active MMIC compatible components for millimeter wavelength applications are investigated. The cost of a millimeter wavelength MMIC's is projected.
MMIC technology for advanced space communications systems
NASA Technical Reports Server (NTRS)
Downey, A. N.; Connolly, D. J.; Anzic, G.
1984-01-01
The current NASA program for 20 and 30 GHz monolithic microwave integrated circuit (MMIC) technology is reviewed. The advantages of MMIC are discussed. Millimeter wavelength MMIC applications and technology for communications systems are discussed. Passive and active MMIC compatible components for millimeter wavelength applications are investigated. The cost of a millimeter wavelength MMIC's is projected.
Zhang, Li; Wang, Lei; He, Jian-Jun
2009-09-01
A novel design of monolithically integrated diplexers and triplexers for fiber-to-the-home applications is presented. A bilevel etched asymmetrical 2 x 2 optical coupler is analyzed for efficient couplings of both upstream and downstream signals. The design of the diplexer is extended to a triplexer by adding an etched diffraction grating as an additional downstream demultiplexing element. The total size of the integrated diplexer and triplexer is smaller than 500 microm x 500 microm.
Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo
2015-03-25
A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser
NASA Astrophysics Data System (ADS)
Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.
1991-01-01
A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.
Electrochemical properties of monolithic nickel sulfide electrodes for use in sodium batteries
DOE Office of Scientific and Technical Information (OSTI.GOV)
Go, Dae-Yeon; Park, Jinsoo, E-mail: jsp@ikw.ac.kr; Noh, Pan-Jin
2014-10-15
Highlights: • We succeeded in preparing monolithic Ni{sub 3}S{sub 2} integrated electrode through the sulfuration. • The sulfuration is a facile and useful method to synthesize metal sulfides with nanostructure. • As-prepared monolithic Ni{sub 3}S{sub 2} electrodes showed very stable and cycle performance over charge/discharge cycling. - Abstract: Monolithic nickel sulfide electrodes were prepared using a facile synthesis method, sulfuration and annealing. As-prepared Ni{sub 3}S{sub 2} electrodes were characterized by X-ray diffractometry and field emission scanning electron microscopy. Thermal stability was determined by thermal gravimetric analysis and differential scanning calorimetry. Electrochemical properties were measured by galvanostatic charge and discharge cyclingmore » for Na-ion batteries. Three kinds of Ni{sub 3}S{sub 2} electrodes were prepared by varying the sulfuration time (5, 15 and 25 min). The electrochemical results indicated that the capacities increased with an increase in sulfuration time and the cycle performance was stable as a result of monolithic integration of nanostructured Ni{sub 3}S{sub 2} on Ni plates, leading to low interfacial resistance.« less
NASA Astrophysics Data System (ADS)
Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya
2016-04-01
A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.
Lin, Lihua; Liu, Shengquan; Nie, Zhou; Chen, Yingzhuang; Lei, Chunyang; Wang, Zhen; Yin, Chao; Hu, Huiping; Huang, Yan; Yao, Shouzhuo
2015-04-21
Nowadays, large-scale screening for enzyme discovery, engineering, and drug discovery processes require simple, fast, and sensitive enzyme activity assay platforms with high integration and potential for high-throughput detection. Herein, a novel automatic and integrated micro-enzyme assay (AIμEA) platform was proposed based on a unique microreaction system fabricated by a engineered green fluorescence protein (GFP)-functionalized monolithic capillary column, with thrombin as an example. The recombinant GFP probe was rationally engineered to possess a His-tag and a substrate sequence of thrombin, which enable it to be immobilized on the monolith via metal affinity binding, and to be released after thrombin digestion. Combined with capillary electrophoresis-laser-induced fluorescence (CE-LIF), all the procedures, including thrombin injection, online enzymatic digestion in the microreaction system, and label-free detection of the released GFP, were integrated in a single electrophoretic process. By taking advantage of the ultrahigh loading capacity of the AIμEA platform and the CE automatic programming setup, one microreaction column was sufficient for many times digestion without replacement. The novel microreaction system showed significantly enhanced catalytic efficiency, about 30 fold higher than that of the equivalent bulk reaction. Accordingly, the AIμEA platform was highly sensitive with a limit of detection down to 1 pM of thrombin. Moreover, the AIμEA platform was robust and reliable to detect thrombin in human serum samples and its inhibition by hirudin. Hence, this AIμEA platform exhibits great potential for high-throughput analysis in future biological application, disease diagnostics, and drug screening.
Two stage dual gate MESFET monolithic gain control amplifier for Ka-band
NASA Technical Reports Server (NTRS)
Sokolov, V.; Geddes, J.; Contolatis, A.
1987-01-01
A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.
Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Kim, In Gyoo; Oh, Jin Hyuk; Kim, Sun Ae; Park, Jaegyu; Kim, Sanggi
2015-06-10
When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications.
Mission Control Technologies: A New Way of Designing and Evolving Mission Systems
NASA Technical Reports Server (NTRS)
Trimble, Jay; Walton, Joan; Saddler, Harry
2006-01-01
Current mission operations systems are built as a collection of monolithic software applications. Each application serves the needs of a specific user base associated with a discipline or functional role. Built to accomplish specific tasks, each application embodies specialized functional knowledge and has its own data storage, data models, programmatic interfaces, user interfaces, and customized business logic. In effect, each application creates its own walled-off environment. While individual applications are sometimes reused across multiple missions, it is expensive and time consuming to maintain these systems, and both costly and risky to upgrade them in the light of new requirements or modify them for new purposes. It is even more expensive to achieve new integrated activities across a set of monolithic applications. These problems impact the lifecycle cost (especially design, development, testing, training, maintenance, and integration) of each new mission operations system. They also inhibit system innovation and evolution. This in turn hinders NASA's ability to adopt new operations paradigms, including increasingly automated space systems, such as autonomous rovers, autonomous onboard crew systems, and integrated control of human and robotic missions. Hence, in order to achieve NASA's vision affordably and reliably, we need to consider and mature new ways to build mission control systems that overcome the problems inherent in systems of monolithic applications. The keys to the solution are modularity and interoperability. Modularity will increase extensibility (evolution), reusability, and maintainability. Interoperability will enable composition of larger systems out of smaller parts, and enable the construction of new integrated activities that tie together, at a deep level, the capabilities of many of the components. Modularity and interoperability together contribute to flexibility. The Mission Control Technologies (MCT) Project, a collaboration of multiple NASA Centers, led by NASA Ames Research Center, is building a framework to enable software to be assembled from flexible collections of components and services.
MicroSPE-nanoLC-ESI-MS/MS Using 10-μm-i.d. Silica-Based Monolithic Columns for Proteomics
DOE Office of Scientific and Technical Information (OSTI.GOV)
Luo, Quanzhou; Page, Jason S.; Tang, Keqi
2007-01-01
Silica-based monolithic narrow bore capillary columns (25 cm x 10 µm i.d.) with an integrated nanoESI emitter has been developed to provide high quality and robust microSPE-nanoLC-ESI-MS analyses. The integrated nanoESI emitter adds no dead volume to the LC separation, allowing stable electrospray performance to be obtained at flow rates of ~10 nL/min. In an initial application we identified 5510 unique peptides covering 1443 distinct Shewanella oneidensis proteins from a 300 ng tryptic digest sample in a single 4-h LC-MS/MS analysis using a linear ion trap MS (LTQ). We found the use of an integrated monolithic ESI emitter provided enhancedmore » resistance to clogging and good run-to-run reproducibility.« less
Monolithically Integrated High-β Nanowire Lasers on Silicon.
Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J
2016-01-13
Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.
GaAs-based optoelectronic neurons
NASA Technical Reports Server (NTRS)
Lin, Steven H. (Inventor); Kim, Jae H. (Inventor); Psaltis, Demetri (Inventor)
1993-01-01
An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.
Silicon-based silicon–germanium–tin heterostructure photonics
Soref, Richard
2014-01-01
The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479
170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.
Rouvalis, E; Chtioui, M; van Dijk, F; Lelarge, F; Fice, M J; Renaud, C C; Carpintero, G; Seeds, A J
2012-08-27
We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.
NASA Astrophysics Data System (ADS)
Lee, Sanghyo; Kim, Jong-Man; Kim, Yong-Kweon; Kwon, Youngwoo
2009-01-01
In this paper, a new absorptive single-pole four-throw (SP4T) switch based on multiple-contact switching is proposed and integrated with a Butler matrix to demonstrate a monolithic beam-forming network at millimeter waves (mm waves). In order to simplify the switching driving circuit and reduce the number of unit switches in an absorptive SP4T switch, the individual switches were replaced with long-span multiple-contact switches using stress-free single-crystalline-silicon MEMS technology. This approach improves the mechanical stability as well as the manufacturing yield, thereby allowing successful integration into a monolithic beam former. The fabricated absorptive SP4T MEMS switch shows insertion loss less than 1.3 dB, return losses better than 11 dB at 30 GHz and wideband isolation performance higher than 39 dB from 20 to 40 GHz. The absorptive SP4T MEMS switch is integrated with a 4 × 4 Butler matrix on a single chip to implement a monolithic beam-forming network, directing beam into four distinct angles. Array factors from the measured data show that the proposed absorptive SPnT MEMS switch can be effectively used for high-performance mm-wave beam-switching systems. This work corresponds to the first demonstration of a monolithic beam-forming network using switched beams.
NASA Astrophysics Data System (ADS)
Reeve, Gerome; Marks, Roger; Blackburn, David
1990-12-01
How the National Institute of Standards and Technology (NIST) interacts with the GaAs community and the Defense Advanced Research Projects Agency microwave monolithic integrated circuit (MMIC) initiative is described. The organization of a joint industry and government laboratory consortium for MMIC-related metrology research is described along with some of the initial technical developments at NIST done in support of the consortium.
Monolithic 3D CMOS Using Layered Semiconductors.
Sachid, Angada B; Tosun, Mahmut; Desai, Sujay B; Hsu, Ching-Yi; Lien, Der-Hsien; Madhvapathy, Surabhi R; Chen, Yu-Ze; Hettick, Mark; Kang, Jeong Seuk; Zeng, Yuping; He, Jr-Hau; Chang, Edward Yi; Chueh, Yu-Lun; Javey, Ali; Hu, Chenming
2016-04-06
Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Robbiano, Valentina; Paternò, Giuseppe M; La Mattina, Antonino A; Motti, Silvia G; Lanzani, Guglielmo; Scotognella, Francesco; Barillaro, Giuseppe
2018-05-22
Silicon photonics would strongly benefit from monolithically integrated low-threshold silicon-based laser operating at room temperature, representing today the main challenge toward low-cost and power-efficient electronic-photonic integrated circuits. Here we demonstrate low-threshold lasing from fully transparent nanostructured porous silicon (PSi) monolithic microcavities (MCs) infiltrated with a polyfluorene derivative, namely, poly(9,9-di- n-octylfluorenyl-2,7-diyl) (PFO). The PFO-infiltrated PSiMCs support single-mode blue lasing at the resonance wavelength of 466 nm, with a line width of ∼1.3 nm and lasing threshold of 5 nJ (15 μJ/cm 2 ), a value that is at the state of the art of PFO lasers. Furthermore, time-resolved photoluminescence shows a significant shortening (∼57%) of PFO emission lifetime in the PSiMCs, with respect to nonresonant PSi reference structures, confirming a dramatic variation of the radiative decay rate due to a Purcell effect. Our results, given also that blue lasing is a worst case for silicon photonics, are highly appealing for the development of low-cost, low-threshold silicon-based lasers with wavelengths tunable from visible to the near-infrared region by simple infiltration of suitable emitting polymers in monolithically integrated nanostructured PSiMCs.
Monolithic multinozzle emitters for nanoelectrospray mass spectrometry
Wang, Daojing [Daly City, CA; Yang, Peidong [Kensington, CA; Kim, Woong [Seoul, KR; Fan, Rong [Pasadena, CA
2011-09-20
Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.
NASA Astrophysics Data System (ADS)
Shi, Bei; Li, Qiang; Lau, Kei May
2018-05-01
Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon photonic applications. In addition to the well-developed hybrid bonding techniques, the direct epitaxy method is spawning as a more strategic and potentially cost-effective approach to monolithically integrate InP-based telecom lasers. To minimize the unwanted defects within the InP crystal, we explore multiple InAs/InP quantum dots as dislocation filters. The high quality InP buffer is thus obtained, and the dislocation filtering effects of the quantum dots are directly examined via both plan-view and cross-sectional transmission electron microscopy, along with room-temperature photoluminescence. The defect density on the InP surface was reduced to 3 × 108/cm2, providing an improved optical property of active photonic devices on Si substrates. This work offers a novel solution to advance large-scale integration of InP on Si, which is beneficial to silicon-based long-wavelength lasers in telecommunications.
Nursam, Natalita M; Wang, Xingdong; Tan, Jeannie Z Y; Caruso, Rachel A
2016-07-13
Porous nitrogen-modified titania (N-titania) monoliths with tailored morphologies were prepared using phase separation and agarose gel templating techniques. The doping and templating process were simultaneously carried out in a one-pot step using alcohol amine-assisted sol-gel chemistry. The amount of polymer used in the monoliths that were prepared using phase separation was shown to affect both the physical and optical properties: higher poly(ethylene glycol) content increased the specific surface area, porosity, and visible light absorption of the final materials. For the agarose-templated monoliths, the infiltration conditions affected the monolith morphology. A porous monolith with high surface area and the least shrinkage was obtained when the N containing alkoxide precursor was infiltrated into the agarose scaffolds at 60 °C. The effect of the diverse porous morphologies on the photocatalytic activity of N-titania was studied for the decomposition of methylene blue (MB) under visible and UV light irradiation. The highest visible light activity was achieved by the agarose-templated N-titania monolith, in part due to higher N incorporation. This sample also showed better UV activity, partly because of the higher specific surface area (up to 112 m(2) g(-1)) compared to the phase separation-induced monoliths (up to 103 m(2) g(-1)). Overall, agarose-templated, porous N-titania monoliths provided better features for effectively removing the MB contaminant.
Li, Weifei; Wang, Bo; Yang, Wantai; Deng, Jianping
2015-02-01
Chiral monolithic absorbent is successfully constructed for the first time by using optically active helical-substituted polyacetylene and graphene oxide (GO). The preparative strategy is facile and straightforward, in which chiral-substituted acetylene monomer (Ma), cross-linker (Mb), and alkynylated GO (Mc) undergo copolymerization to form the desired monolithic absorbent in quantitative yield. The resulting monoliths are characterized by circular dichroism, UV-vis absorption, scanning electron microscopy (SEM), FT-IR, Raman, energy-dispersive spectrometer (EDS), X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET), XPS, and thermogravimetric analysis (TGA) techniques. The polymer chains derived from Ma form chiral helical structures and thus provide optical activity to the monoliths, while GO sheets contribute to the formation of porous structures. The porous structure enables the monolithic absorbents to demonstrate a large swelling ratio in organic solvents, and more remarkably, the helical polymer chains provide optical activity and further enantio-differentiating absorption ability. The present study establishes an efficient and versatile methodology for preparing novel functional materials, in particular monolithic chiral materials based on substituted polyacetylene and GO. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Yang, Rui; Pagaduan, Jayson V; Yu, Ming; Woolley, Adam T
2015-01-01
Microfluidic systems with monolithic columns have been developed for preconcentration and on-chip labeling of model proteins. Monoliths were prepared in microchannels by photopolymerization, and their properties were optimized by varying the composition and concentration of the monomers to improve flow and extraction. On-chip labeling of proteins was achieved by driving solutions through the monolith by use of voltage then incubating fluorescent dye with protein retained on the monolith. Subsequently, the labeled proteins were eluted, by applying voltages to reservoirs on the microdevice, and then detected, by monitoring laser-induced fluorescence. Monoliths prepared from octyl methacrylate combine the best protein retention with the possibility of separate elution of unattached fluorescent label with 50% acetonitrile. Finally, automated on-chip extraction and fluorescence labeling of a model protein were successfully demonstrated. This method involves facile sample pretreatment, and therefore has potential for production of integrated bioanalysis microchips.
Chu, GuangYong; Maho, Anaëlle; Cano, Iván; Polo, Victor; Brenot, Romain; Debrégeas, Hélène; Prat, Josep
2016-10-15
We demonstrate a monolithically integrated dual-output DFB-SOA, and conduct the field trial on a multi-user bidirectional coherent ultradense wavelength division multiplexing-passive optical network (UDWDM-PON). To the best of our knowledge, this is the first achievement of simplified single integrated laser-based neighboring coherent optical network units (ONUs) with a 12.5 GHz channel spaced ultra-dense access network, including both downstream and upstream, taking the benefits of low footprint and low-temperature dependence.
Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H
2013-03-25
n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.
NASA Astrophysics Data System (ADS)
Ye, Han; Han, Qin; Lv, Qianqian; Pan, Pan; An, Junming; Yang, Xiaohong
2017-12-01
We demonstrate the monolithic integration of a uni-traveling carrier photodiode array with a 4 channel, O-band arrayed waveguide grating demultiplexer on the InP platform by the selective area growth technique. An extended coupling layer at the butt-joint is adopted to ensure both good fabrication compatibility and high photodiode quantum efficiency of 77%. The fabricated integrated chip exhibits a uniform bandwidth over 25 GHz for each channel and a crosstalk below -22 dB.
Preparation of activated carbon monolith by application of phenolic resins as carbon precursors
NASA Astrophysics Data System (ADS)
Sajad, Mehran; Kazemzad, Mahmood; Hosseinnia, Azarmidokht
2014-04-01
In the current work, activated carbon monoliths have been prepared by application of different phenolic hydrocarbons namely catechol and resorcinol as carbon precursors. For synthesis of carbon monolith, the precursors have been mixed with Genapol PF-10 as template and then polymerized in the presence of lysine as catalyst. Then the polymerized monolith carbonized in inert atmosphere at 700°C and activated by water steam at 550°C. It was found that resorcinol polymerization is easier than catechol and occurred at 90°C while for polymerization of catechol elevated temperature of 120°C at hydrothermal condition is necessary. The prepared activated carbon samples have been characterized by various analysis methods including scanning electron microscopy (SEM), surface area measurement, and transmission electron microscopy (TEM). The adsorptions of three different aromatic hydrocarbons by the prepared activated carbon samples have also been investigated by high performance liquid chromatography (HPLC) and UV-Vis spectroscopy. It was found that carbon monolith prepared by catechol as carbon precursor has higher adsorpability and strength in comparison with the other sample. The higher performance of carbon monolith prepared by catechol can be associated with its higher active sites in comparison with resorcinol.
Monolithic microwave integrated circuit technology for advanced space communication
NASA Technical Reports Server (NTRS)
Ponchak, George E.; Romanofsky, Robert R.
1988-01-01
Future Space Communications subsystems will utilize GaAs Monolithic Microwave Integrated Circuits (MMIC's) to reduce volume, weight, and cost and to enhance system reliability. Recent advances in GaAs MMIC technology have led to high-performance devices which show promise for insertion into these next generation systems. The status and development of a number of these devices operating from Ku through Ka band will be discussed along with anticipated potential applications.
SU8 diaphragm micropump with monolithically integrated cantilever check valves.
Ezkerra, Aitor; Fernández, Luis José; Mayora, Kepa; Ruano-López, Jesús Miguel
2011-10-07
This paper presents a SU8 unidirectional diaphragm micropump with embedded out-of-plane cantilever check valves. The device represents a reliable and low-cost solution for integration of microfluidic control in lab-on-a-chip devices. Its planar architecture allows monolithic definition of its components in a single step and potential integration with previously reported PCR, electrophoresis and flow-sensing SU8 microdevices. Pneumatic actuation is applied on a PDMS diaphragm, which is bonded to the SU8 body at wafer level, further enhancing its integration and mass production capabilities. The cantilever check valves move synchronously with the diaphragm, feature fast response (10ms), low dead volume (86nl) and a 94% flow blockage up to 300kPa. The micropump achieves a maximum flow rate of 177 μl min(-1) at 6 Hz and 200 kPa with an effective area of 10 mm(2). The device is reliable, self-priming and tolerant to particles and big bubbles. To the knowledge of the authors, this is the first micropump in SU8 with monolithically integrated cantilever check valves.
NASA Technical Reports Server (NTRS)
Leonard, Regis F. (Editor); Bhasin, Kul B. (Editor)
1991-01-01
Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure.
Antibacterial activities effectuated by co-continuous epoxy-based polymer materials.
Kubo, Takuya; Yasuda, Koji; Tominaga, Yuichi; Otsuka, Koji; Hosoya, Ken
2013-07-01
We report antibacterial activities of the epoxy-resin-based monolithic media (epoxy monoliths) having macroporous co-continuous structure as well as hydrophobic and/or hydrophilic surface. Utilizing epoxy monoliths containing ammonium groups, the antibacterial experiments were examined using Escherichia coli. As the results, the monolithic media prepared with an epoxy monomer having nitrogen atoms clearly showed antibacterial activities, while those prepared using the monomer without nitrogen atom showed less antibacterial activities. Additionally, the quaternization of the epoxy polymers were expressed significant antibacterial activities. Further studies elucidated that the observed antibacterial activities involved the steep effect based on pH changing of solution and hydrophobic interactions by the quaternary ammonium. Copyright © 2013 Elsevier B.V. All rights reserved.
Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration
NASA Astrophysics Data System (ADS)
Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen
2012-09-01
A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously considered inaccessible.
Monolithically Integrated SiGe/Si PIN-HBT Front-End Transimpedance Photoreceivers
NASA Technical Reports Server (NTRS)
Rieh, J.-S.; Qasaimeh, O.; Klotzkin, D.; Lu, L.-H.; Katehi, L. P. B.; Yang, K.; Bhattacharya, P.; Croke, E. T.
1997-01-01
The demand for monolithically integrated photoreceivers based on Si-based technology keeps increasing as low cost and high reliability products are required for the expanding commercial market. Higher speed and wider operating frequency range are expected when SiGe/Si heterojunction is introduced to the circuit design. In this paper, a monolithic SiGe/Si PIN-HBT front-end transimpedance photoreceiver is demonstrated for the first time. For this purpose, mesa-type SiGe/Si PIN-HBT technology was developed. Fabricated HBTs exhibit f(sub max) of 34 GHz with DC gain of 25. SiGe/Si PIN photodiodes, which share base and collector layers of HBTs, demonstrate responsivity of 0.3 A/W at lambda=850 nm and bandwidth of 450 MHz. Based on these devices, single- and dual-feedback transimpedance amplifiers were fabricated and they exhibited the bandwidth of 3.2 GHz and 3.3 GHz with the transimpedance gain of 45.2 dB(Omega) and 47.4 dB(Omega) respectively. Monolithically integrated single-feedback PIN-HBT photoreceivers were implemented and the bandwidth was measured to be approx. 0.5 GHz, which is limited by the bandwidth of PIN photodiodes.
Novel Si-Ge-C Superlattices for More than Moore CMOS
2016-03-31
diodes can be entirely formed by epitaxial growth, CMOS Active Pixel Sensors can be made with Fully-Depleted SOI CMOS . One important advantage of...a NMOS Transfer Gate (TG), which could be part of a 4T pixel APS. PPDs are preferred in CMOS image sensors for the ability of the pinning layer to...than Moore” with the creation of active photonic devices monolithically integrated with CMOS . Applications include Multispectral CMOS Image Sensors
Monolithically interconnected silicon-film™ module technology
NASA Astrophysics Data System (ADS)
DelleDonne, E. J.; Ford, D. H.; Hall, R. B.; Ingram, A. E.; Rand, J. A.; Barnett, A. M.
1999-03-01
AstroPower is developing an advanced thin-silicon-based, photovoltaic module product. A low-cost monolithic interconnected device is being integrated into a module that combines the design and process features of advanced light trapped, thin-silicon solar cells. This advanced product incorporates a low-cost substrate, a nominally 50-μm thick grown silicon layer with minority carrier diffusion lengths exceeding the active layer thickness, light trapping due to back-surface reflection, and back-surface passivation. The thin silicon layer enables high solar cell performance and can lead to a module conversion efficiency as high as 19%. These performance design features, combined with low-cost manufacturing using relatively low-cost capital equipment, continuous processing and a low-cost substrate, will lead to high-performance, low-cost photovoltaic panels.
Designing Catalytic Monoliths For Closed-Cycle CO2 Lasers
NASA Technical Reports Server (NTRS)
Guinn, Keith; Herz, Richard K.; Goldblum, Seth; Noskowski, ED
1992-01-01
LASCAT (Design of Catalytic Monoliths for Closed-Cycle Carbon Dioxide Lasers) computer program aids in design of catalyst in monolith by simulating effects of design decisions on performance of laser. Provides opportunity for designer to explore tradeoffs among activity and dimensions of catalyst, dimensions of monolith, pressure drop caused by flow of gas through monolith, conversion of oxygen, and other variables. Written in FORTRAN 77.
NASA Astrophysics Data System (ADS)
Luo, Yang; Huang, Yongqing; Ren, Xiaomin; Duan, Xiaofeng; Wang, Qi
2014-01-01
In order to integrate photonic devices with electronic devices to realize the low-loss hybrid integrated devices. A wide spectral hybrid integrated optoelectronic receiver was fabricated by using quasi-monolithic integration technology (QMIT) in this paper. It consisted of a 8.5 GHz InGaAs photodetector and a 1.25 Gbps mature transimpedance pre-amplifier (TIA) complementrary metal oxide semiconductor (CMOS) chip. The Au layer was deposited on a designed Si platform to form planar waveguide electrode which replaced a part of bonding wire, so it reduced the parasitic parameters of the optoelectronic receiver, and then enhanced high-speed response characteristics and the stability of the hybrid integrated receiver. Finally, a 3 Gbps clear open eye diagram of the hybrid integrated optoelectronic receiver was obtained.
Xu, J; Bhattacharya, P; Váró, G
2004-03-15
The light-sensitive protein, bacteriorhodopsin (BR), is monolithically integrated with an InP-based amplifier circuit to realize a novel opto-electronic integrated circuit (OEIC) which performs as a high-speed photoreceiver. The circuit is realized by epitaxial growth of the field-effect transistors, currently used semiconductor device and circuit fabrication techniques, and selective area BR electro-deposition. The integrated photoreceiver has a responsivity of 175 V/W and linear photoresponse, with a dynamic range of 16 dB, with 594 nm photoexcitation. The dynamics of the photochemical cycle of BR has also been modeled and a proposed equivalent circuit simulates the measured BR photoresponse with good agreement.
Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Gyoo Kim, In; Hyuk Oh, Jin; Ae Kim, Sun; Park, Jaegyu; Kim, Sanggi
2015-01-01
When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications. PMID:26061463
Air Force Technical Objective Document, FY89.
1988-04-01
threat warning; multimegawatt stand-off jammers; a family of new, broadband , active decoy expendables; E4? subsystems and EW suites for Military...and monolithic integrated circuits. (3) Microwave TWTs Develop microwave tube technology and selected thermionic power sources and amplifiers for ECM...Improved design reliability and multiple application of tube technology are stressed. Improve Traveling Wave Tube ( TWT ) reliability by instrumenting a TWT
Development of the multiwavelength monolithic integrated fiber optics terminal
NASA Technical Reports Server (NTRS)
Chubb, C. R.; Bryan, D. A.; Powers, J. K.; Rice, R. R.; Nettle, V. H.; Dalke, E. A.; Reed, W. R.
1982-01-01
This paper describes the development of the Multiwavelength Monolithic Integrated Fiber Optic Terminal (MMIFOT) for the NASA Johnson Space Center. The program objective is to utilize guided wave optical technology to develop wavelength-multiplexing and -demultiplexing units, using a single mode optical fiber for transmission between terminals. Intensity modulated injection laser diodes, chirped diffraction gratings and thin film lenses are used to achieve the wavelength-multiplexing and -demultiplexing. The video and audio data transmission test of an integrated optical unit with a Luneburg collimation lens, waveguide diffraction grating and step index condensing lens is described.
Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J
2011-07-04
In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.
Integration of quantum cascade lasers and passive waveguides
DOE Office of Scientific and Technical Information (OSTI.GOV)
Montoya, Juan, E-mail: juan.montoya@ll.mit.edu; Wang, Christine; Goyal, Anish
2015-07-20
We report on monolithic integration of active quantum cascade laser (QCL) materials with passive waveguides formed by using proton implantation. Proton implantation reduces the electron concentration in the QCL layers by creating deep levels that trap carriers. This strongly reduces the intersubband absorption and the free-carrier absorption in the gain region and surrounding layers, thus significantly reducing optical loss. We have measured loss as low as α = 0.33 cm{sup −1} in λ = 9.6 μm wavelength proton-implanted QCL material. We have also demonstrated lasing in active-passive integrated waveguides. This simple integration technique is anticipated to enable low-cost fabrication in infrared photonic integrated circuits in themore » mid-infrared (λ ∼ 3–16 μm)« less
NASA Technical Reports Server (NTRS)
Kot, R. A.; Oliver, J. D.; Wilson, S. G.
1984-01-01
A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver.
Monolithic microwave integrated circuits: Interconnections and packaging considerations
NASA Astrophysics Data System (ADS)
Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.
Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.
Monolithic microwave integrated circuits: Interconnections and packaging considerations
NASA Technical Reports Server (NTRS)
Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.
1984-01-01
Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.
Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor
NASA Technical Reports Server (NTRS)
Bar-Chaim, N.; Harder, CH.; Margalit, S.; Yariv, A.; Katz, J.; Ury, I.
1982-01-01
A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100-400 and light responsitivity of 75 A/W (for wavelengths of 0.82 micron) at collector current levels of 15 mA were obtained.
The preparation method of terahertz monolithic integrated device
NASA Astrophysics Data System (ADS)
Zhang, Cong; Su, Bo; He, Jingsuo; Zhang, Hongfei; Wu, Yaxiong; Zhang, Shengbo; Zhang, Cunlin
2018-01-01
The terahertz monolithic integrated device is to integrate the pumping area of the terahertz generation, the detection area of the terahertz receiving and the metal waveguide of terahertz transmission on the same substrate. The terahertz generation and detection device use a photoconductive antenna structure the metal waveguide use a microstrip line structure. The evanescent terahertz-bandwidth electric field extending above the terahertz transmission line interacts with, and is modified by, overlaid dielectric samples, thus enabling the characteristic vibrational absorption resonances in the sample to be probed. In this device structure, since the semiconductor substrate of the photoconductive antenna is located between the strip conductor and the dielectric layer of the microstrip line, and the semiconductor substrate cannot grow on the dielectric layer directly. So how to prepare the semiconductor substrate of the photoconductive antenna and how to bond the semiconductor substrate to the dielectric layer of the microstrip line is a key step in the terahertz monolithic integrated device. In order to solve this critical problem, the epitaxial wafer structure of the two semiconductor substrates is given and transferred to the desired substrate by two methods, respectively.
Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics
NASA Astrophysics Data System (ADS)
Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin
2017-12-01
A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.
Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru
2018-02-19
We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.
Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.
Jeong, Seonghoon; Oh, Seung Kyu; Ryou, Jae-Hyun; Ahn, Kwang-Soon; Song, Keun Man; Kim, Hyunsoo
2018-01-31
Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level without the wavelength conversion through packaged phosphors or chip integration for photon recycling are of particular importance to produce compact, cost-competitive, and smart lighting sources. In this study, monolithic white LEDs were developed based on ZnO/GaN semiconductor heterojunctions. The electroluminescence (EL) wavelength of the ZnO/GaN heterojunction could be tuned by a post-thermal annealing process, causing the generation of an interfacial Ga 2 O 3 layer. Ultraviolet, violet-bluish, and greenish-yellow broad bands were observed from n-ZnO/p-GaN without an interfacial layer, whereas a strong greenish-yellow band emission was the only one observed from that with an interfacial layer. By controlled integration of ZnO/GaN heterojunctions with different postannealing conditions, monolithic white LED was demonstrated with color coordinates in the range (0.3534, 0.3710)-(0.4197, 0.4080) and color temperatures of 4778-3349 K in the Commission Internationale de l'Eclairage 1931 chromaticity diagram. Furthermore, the monolithic white LED produced approximately 2.1 times higher optical output power than a conventional ZnO/GaN heterojunction due to the carrier confinement effect at the Ga 2 O 3 /n-ZnO interface.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Varner, R.L.; Blankenship, J.L.; Beene, J.R.
1998-02-01
Custom monolithic electronic circuits have been developed recently for large detector applications in high energy physics where subsystems require tens of thousands of channels of signal processing and data acquisition. In the design and construction of these enormous detectors, it has been found that monolithic circuits offer significant advantages over discrete implementations through increased performance, flexible packaging, lower power and reduced cost per channel. Much of the integrated circuit design for the high energy physics community is directly applicable to intermediate energy heavy-ion and electron physics. This STTR project conducted in collaboration with researchers at the Holifield Radioactive Ion Beammore » Facility (HRIBF) at Oak Ridge National Laboratory, sought to develop a new integrated circuit chip set for barium fluoride (BaF{sub 2}) detector arrays based upon existing CMOS monolithic circuit designs created for the high energy physics experiments. The work under the STTR Phase 1 demonstrated through the design, simulation, and testing of several prototype chips the feasibility of using custom CMOS integrated circuits for processing signals from BaF{sub 2} detectors. Function blocks including charge-sensitive amplifiers, comparators, one shots, time-to-amplitude converters, analog memory circuits and buffer amplifiers were implemented during Phase 1 effort. Experimental results from bench testing and laboratory testing with sources were documented.« less
Wang, Sen; Wu, Zhong-Shuai; Zheng, Shuanghao; Zhou, Feng; Sun, Chenglin; Cheng, Hui-Ming; Bao, Xinhe
2017-04-25
Micro-supercapacitors (MSCs) hold great promise as highly competitive miniaturized power sources satisfying the increased demand of smart integrated electronics. However, single-step scalable fabrication of MSCs with both high energy and power densities is still challenging. Here we demonstrate the scalable fabrication of graphene-based monolithic MSCs with diverse planar geometries and capable of superior integration by photochemical reduction of graphene oxide/TiO 2 nanoparticle hybrid films. The resulting MSCs exhibit high volumetric capacitance of 233.0 F cm -3 , exceptional flexibility, and remarkable capacity of modular serial and parallel integration in aqueous gel electrolyte. Furthermore, by precisely engineering the interface of electrode with electrolyte, these monolithic MSCs can operate well in a hydrophobic electrolyte of ionic liquid (3.0 V) at a high scan rate of 200 V s -1 , two orders of magnitude higher than those of conventional supercapacitors. More notably, the MSCs show landmark volumetric power density of 312 W cm -3 and energy density of 7.7 mWh cm -3 , both of which are among the highest values attained for carbon-based MSCs. Therefore, such monolithic MSC devices based on photochemically reduced, compact graphene films possess enormous potential for numerous miniaturized, flexible electronic applications.
Monolithically integrated tri-axis shock accelerometers with MHz-level high resonant-frequency
NASA Astrophysics Data System (ADS)
Zou, Hongshuo; Wang, Jiachou; Chen, Fang; Bao, Haifei; Jiao, Ding; Zhang, Kun; Song, Zhaohui; Li, Xinxin
2017-07-01
This paper reports a novel monolithically integrated tri-axis high-shock accelerometer with high resonant-frequency for the detection of a broad frequency-band shock signal. For the first time, a resonant-frequency as high as about 1.4 MHz is designed for all the x-, y- and z-axis accelerometers of the integrated tri-axis sensor. In order to achieve a wide frequency-band detection performance, all the three sensing structures are designed into an axially compressed/stretched tiny-beam sensing scheme, where the p + -doped tiny-beams are connected into a Wheatstone bridge for piezoresistive output. By using ordinary (1 1 1) silicon wafer (i.e. non-SOI wafer), a single-wafer based fabrication technique is developed to monolithically integrate the three sensing structures for the tri-axis sensor. Testing results under high-shock acceleration show that each of the integrated three-axis accelerometers exhibit about 1.4 MHz resonant-frequency and 0.2-0.4 µV/V/g sensitivity. The achieved high frequencies for all the three sensing units make the tri-axis sensor promising in high fidelity 3D high-shock detection applications.
Du, Shoucheng; Tang, Wenxiang; Guo, Yanbing; ...
2016-12-30
Monolithic catalysts have been widely used in automotive, chemical, and energy relevant industries. Nano-array based monolithic catalysts have been developed, demonstrating high catalyst utilization efficiency and good thermal/mechanical robustness. Compared with the conventional wash-coat based monolithic catalysts, they have shown advances in precise and optimum microstructure control and feasibility in correlating materials structure with properties. Recently, the nano-array based monolithic catalysts have been studied for low temperature oxidation of automotive engine exhaust and exhibited interesting and promising catalytic activities. Here, this review focuses on discussing the key catalyst structural parameters that affect the catalytic performance from the following aspects, (1)more » geometric shape and crystal planes, (2) guest atom doping and defects, (3) array size and size-assisted active species loading, and (4) the synergy effect of metal oxide in composite nano-arrays. Prior to the discussion, an overview of the current status of synthesis and development of the nano-array based monolithic catalysts is introduced. The performance of these materials in low temperature simulated engine exhaust oxidation is also demonstrated. Finally, we hope this review will elucidate the science and chemistry behind the good oxidation performance of the nanoarray- based monolithic catalysts, and serve as a timely and useful research guide for rational design and further improvement of the nano-array based monolithic catalysts for automobile emission control.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Du, Shoucheng; Tang, Wenxiang; Guo, Yanbing
Monolithic catalysts have been widely used in automotive, chemical, and energy relevant industries. Nano-array based monolithic catalysts have been developed, demonstrating high catalyst utilization efficiency and good thermal/mechanical robustness. Compared with the conventional wash-coat based monolithic catalysts, they have shown advances in precise and optimum microstructure control and feasibility in correlating materials structure with properties. Recently, the nano-array based monolithic catalysts have been studied for low temperature oxidation of automotive engine exhaust and exhibited interesting and promising catalytic activities. Here, this review focuses on discussing the key catalyst structural parameters that affect the catalytic performance from the following aspects, (1)more » geometric shape and crystal planes, (2) guest atom doping and defects, (3) array size and size-assisted active species loading, and (4) the synergy effect of metal oxide in composite nano-arrays. Prior to the discussion, an overview of the current status of synthesis and development of the nano-array based monolithic catalysts is introduced. The performance of these materials in low temperature simulated engine exhaust oxidation is also demonstrated. Finally, we hope this review will elucidate the science and chemistry behind the good oxidation performance of the nanoarray- based monolithic catalysts, and serve as a timely and useful research guide for rational design and further improvement of the nano-array based monolithic catalysts for automobile emission control.« less
Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications
NASA Technical Reports Server (NTRS)
Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.
1989-01-01
A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.
Monolithic integration of microfluidic channels and semiconductor lasers.
Cran-McGreehin, Simon J; Dholakia, Kishan; Krauss, Thomas F
2006-08-21
We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.
Monolithic integration of microfluidic channels and semiconductor lasers
NASA Astrophysics Data System (ADS)
Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.
2006-08-01
We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.
NASA Astrophysics Data System (ADS)
Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya
2015-04-01
A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.
Jiang, Peng; Zhao, Shuai; Zhu, Rong
2015-01-01
This paper presents a smart sensing strip for noninvasively monitoring respiratory flow in real time. The monitoring system comprises a monolithically-integrated flexible hot-film flow sensor adhered on a molded flexible silicone case, where a miniaturized conditioning circuit with a Bluetooth4.0 LE module are packaged, and a personal mobile device that wirelessly acquires respiratory data transmitted from the flow sensor, executes extraction of vital signs, and performs medical diagnosis. The system serves as a wearable device to monitor comprehensive respiratory flow while avoiding use of uncomfortable nasal cannula. The respiratory sensor is a flexible flow sensor monolithically integrating four elements of a Wheatstone bridge on single chip, including a hot-film resistor, a temperature-compensating resistor, and two balancing resistors. The monitor takes merits of small size, light weight, easy operation, and low power consumption. Experiments were conducted to verify the feasibility and effectiveness of monitoring and diagnosing respiratory diseases using the proposed system. PMID:26694401
Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo; Hasama, Toshifumi; Ishikawa, Hiroshi
2013-07-01
We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation with a dose of 5 × 10(14) cm(-2) and subsequent annealing at 720 °C for 60 s, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the cross-phase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ at a 10-GHz repetition rate.
NASA Astrophysics Data System (ADS)
Fuchs, Erica R. H.; Bruce, E. J.; Ram, R. J.; Kirchain, Randolph E.
2006-08-01
The monolithic integration of components holds promise to increase network functionality and reduce packaging expense. Integration also drives down yield due to manufacturing complexity and the compounding of failures across devices. Consensus is lacking on the economically preferred extent of integration. Previous studies on the cost feasibility of integration have used high-level estimation methods. This study instead focuses on accurate-to-industry detail, basing a process-based cost model of device manufacture on data collected from 20 firms across the optoelectronics supply chain. The model presented allows for the definition of process organization, including testing, as well as processing conditions, operational characteristics, and level of automation at each step. This study focuses on the cost implications of integration of a 1550-nm DFB laser with an electroabsorptive modulator on an InP platform. Results show the monolithically integrated design to be more cost competitive over discrete component options regardless of production scale. Dominant cost drivers are packaging, testing, and assembly. Leveraging the technical detail underlying model projections, component alignment, bonding, and metal-organic chemical vapor deposition (MOCVD) are identified as processes where technical improvements are most critical to lowering costs. Such results should encourage exploration of the cost advantages of further integration and focus cost-driven technology development.
NASA Astrophysics Data System (ADS)
Wade, Mark T.; Shainline, Jeffrey M.; Orcutt, Jason S.; Ram, Rajeev J.; Stojanovic, Vladimir; Popovic, Milos A.
2014-03-01
We present the spoked-ring microcavity, a nanophotonic building block enabling energy-efficient, active photonics in unmodified, advanced CMOS microelectronics processes. The cavity is realized in the IBM 45nm SOI CMOS process - the same process used to make many commercially available microprocessors including the IBM Power7 and Sony Playstation 3 processors. In advanced SOI CMOS processes, no partial etch steps and no vertical junctions are available, which limits the types of optical cavities that can be used for active nanophotonics. To enable efficient active devices with no process modifications, we designed a novel spoked-ring microcavity which is fully compatible with the constraints of the process. As a modulator, the device leverages the sub-100nm lithography resolution of the process to create radially extending p-n junctions, providing high optical fill factor depletion-mode modulation and thereby eliminating the need for a vertical junction. The device is made entirely in the transistor active layer, low-loss crystalline silicon, which eliminates the need for a partial etch commonly used to create ridge cavities. In this work, we present the full optical and electrical design of the cavity including rigorous mode solver and FDTD simulations to design the Qlimiting electrical contacts and the coupling/excitation. We address the layout of active photonics within the mask set of a standard advanced CMOS process and show that high-performance photonic devices can be seamlessly monolithically integrated alongside electronics on the same chip. The present designs enable monolithically integrated optoelectronic transceivers on a single advanced CMOS chip, without requiring any process changes, enabling the penetration of photonics into the microprocessor.
Microwave/millimeter wave technology
NASA Astrophysics Data System (ADS)
Abita, Joseph L.
1988-09-01
The microwave/millimeter-wave monolithic integrated-circuit (MIMIC) technology and systems are discussed along with the application of MIMICs in electronic warfare. The components of a MIMIC are described, with particular attention given to the active-array antenna transmit/receive module, which is at the focus of the MIMIC, and to the features of a typical MIMIC chip. The typical performance characteristics of MIMIC components are presented in tabular form.
Chen, Jing; Du, Yuzhang; Que, Wenxiu; Xing, Yonglei; Chen, Xiaofeng; Lei, Bo
2015-12-01
Crack-free organic-inorganic hybrid monoliths with controlled biomineralization activity and mechanical property have an important role for highly efficient bone tissue regeneration. Here, biomimetic and crack-free polydimethylsiloxane (PDMS)-modified bioactive glass (BG)-poly(ethylene glycol) (PEG) (PDMS-BG-PEG) hybrids monoliths were prepared by a facile sol-gel technique. Results indicate that under the assist of co-solvents, BG sol and PDMS and PEG could be hybridized at a molecular level, and effects of the PEG molecular weight on the structure, biomineralization activity, and mechanical property of the as-prepared hybrid monoliths were also investigated in detail. It is found that an addition of low molecular weight PEG can significantly prevent the formation of cracks and speed up the gelation of the hybrid monoliths, and the surface microstructure of the hybrid monoliths can be changed from the porous to the smooth as the PEG molecular weight increases. Additionally, the hybrid monoliths with low molecular weight PEG show the high formation of the biological apatite layer, while the hybrids with high molecular weight PEG exhibit negligible biomineralization ability in simulated body fluid (SBF). Furthermore, the PDMS-BG-PEG 600 hybrid monolith has significantly high compressive strength (32 ± 3 MPa) and modulus (153 ± 11 MPa), as well as good cell biocompatibility by supporting osteoblast (MC3T3-E1) attachment and proliferation. These results indicate that the as-prepared PDMS-BG-PEG hybrid monoliths may have promising applications for bone tissue regeneration. Copyright © 2015 Elsevier B.V. All rights reserved.
Apparatus for millimeter-wave signal generation
Vawter, G. Allen; Hietala, Vincent M.; Zolper, John C.; Mar, Alan; Hohimer, John P.
1999-01-01
An opto-electronic integrated circuit (OEIC) apparatus is disclosed for generating an electrical signal at a frequency .gtoreq.10 GHz. The apparatus, formed on a single substrate, includes a semiconductor ring laser for generating a continuous train of mode-locked lasing pulses and a high-speed photodetector for detecting the train of lasing pulses and generating the electrical signal therefrom. Embodiments of the invention are disclosed with an active waveguide amplifier coupling the semiconductor ring laser and the high-speed photodetector. The invention has applications for use in OEICs and millimeter-wave monolithic integrated circuits (MMICs).
An X-Band SOS Resistive Gate-Insulator-Semiconductor /RIS/ switch
NASA Astrophysics Data System (ADS)
Kwok, S. P.
1980-02-01
The new X-Band Resistive Gate-Insulator-Semiconductor (RIS) switch has been fabricated on silicon-on-sapphire, and its equivalent circuit model characterized. An RIS SPST switch with 20-dB on/off isolation, 1.2-dB insertion loss, and power handling capacity in excess of 20-W peak has been achieved at X band. The device switching time is on the order of 600 ns, and it requires negligible control holding current in both on and off states. The device is compatible with monolithic integrated-circuit technology and thus is suitable for integration into low-cost monolithic phase shifters or other microwave integrated circuits.
Integrated Radial Probe Transition From MMIC to Waveguide
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Chattopadhyay, Goutam
2007-01-01
A radial probe transition between a monolithic microwave integrated circuit (MMIC) and a waveguide has been designed for operation at frequency of 340 GHz and to be fabricated as part of a monolithic unit that includes the MMIC. Integrated radial probe transitions like this one are expected to be essential components of future MMIC amplifiers operating at frequencies above 200 GHz. While MMIC amplifiers for this frequency range have not yet been widely used because they have only recently been developed, there are numerous potential applications for them-- especially in scientific instruments, test equipment, radar, and millimeter-wave imaging systems for detecting hidden weapons.
Vertical and lateral heterogeneous integration
NASA Astrophysics Data System (ADS)
Geske, Jon; Okuno, Yae L.; Bowers, John E.; Jayaraman, Vijay
2001-09-01
A technique for achieving large-scale monolithic integration of lattice-mismatched materials in the vertical direction and the lateral integration of dissimilar lattice-matched structures has been developed. The technique uses a single nonplanar direct-wafer-bond step to transform vertically integrated epitaxial structures into lateral epitaxial variation across the surface of a wafer. Nonplanar wafer bonding is demonstrated by integrating four different unstrained multi-quantum-well active regions lattice matched to InP on a GaAs wafer surface. Microscopy is used to verify the quality of the bonded interface, and photoluminescence is used to verify that the bonding process does not degrade the optical quality of the laterally integrated wells. The authors propose this technique as a means to achieve greater levels of wafer-scale integration in optical, electrical, and micromechanical devices.
NASA Technical Reports Server (NTRS)
1981-01-01
Monolithic catalysts with higher available active surface areas and better thermal conductivity than conventional pellets beds, making possible the steam reforming of fuels heavier than naphtha, were examined. Performance comparisons were made between conventional pellet beds and honeycomb monolith catalysts using n-hexane as the fuel. Metal-supported monoliths were examined. These offer higher structural stability and higher thermal conductivity than ceramic supports. Data from two metal monoliths of different nickel catalyst loadings were compared to pellets under the same operating conditions. Improved heat transfer and better conversion efficiencies were obtained with the monolith having higher catalyst loading. Surface-gas interaction was observed throughout the length of the monoliths.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Liu, Zhaojun; Ma, Jun; Huang, Tongde
2014-03-03
In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.
InP-based compact transversal filter for monolithically integrated light source array.
Ueda, Yuta; Fujisawa, Takeshi; Takahata, Kiyoto; Kohtoku, Masaki; Ishii, Hiroyuki
2014-04-07
We developed an InP-based 4x1 transversal filter (TF) with multi-mode interference couplers (MMIs) as a compact wavelength multiplexer (MUX) 1700 μm x 400 μm in size. Furthermore, we converted the MMI-based TF to a reflection type to obtain an ultra-compact MUX of only 900 μm x 50 μm. These MUXs are made with a simple fabrication process and show a satisfactory wavelength filtering operation as MUXs of monolithically integrated light source arrays, for example, for 100G bit Ethernet.
A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array
NASA Technical Reports Server (NTRS)
Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto
1987-01-01
A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.
High-performance packaging for monolithic microwave and millimeter-wave integrated circuits
NASA Technical Reports Server (NTRS)
Shalkhauser, K. A.; Li, K.; Shih, Y. C.
1992-01-01
Packaging schemes are developed that provide low-loss, hermetic enclosure for enhanced monolithic microwave and millimeter-wave integrated circuits. These package schemes are based on a fused quartz substrate material offering improved RF performance through 44 GHz. The small size and weight of the packages make them useful for a number of applications, including phased array antenna systems. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices.
Monolithically Integrated, Mechanically Resilient Carbon-Based Probes for Scanning Probe Microscopy
NASA Technical Reports Server (NTRS)
Kaul, Anupama B.; Megerian, Krikor G.; Jennings, Andrew T.; Greer, Julia R.
2010-01-01
Scanning probe microscopy (SPM) is an important tool for performing measurements at the nanoscale in imaging bacteria or proteins in biology, as well as in the electronics industry. An essential element of SPM is a sharp, stable tip that possesses a small radius of curvature to enhance spatial resolution. Existing techniques for forming such tips are not ideal. High-aspect-ratio, monolithically integrated, as-grown carbon nanofibers (CNFs) have been formed that show promise for SPM applications by overcoming the limitations present in wet chemical and separate substrate etching processes.
Configuration study for a 30 GHz monolithic receive array: Technical assessment
NASA Technical Reports Server (NTRS)
Nester, W. H.; Cleaveland, B.; Edward, B.; Gotkis, S.; Hesserbacker, G.; Loh, J.; Mitchell, B.
1984-01-01
The current status of monolithic microwave integrated circuits (MMICs) in phased array feeds is discussed from the point of view of cost performance, reliability, and design considerations. Transitions to MMICs, compatible antenna radiating elements and reliability considerations are addressed. Hybrid antennas, feed array antenna technology, and offset reflectors versus phased arrays are examined.
Monolithic Active Pixel Sensors
NASA Astrophysics Data System (ADS)
Lutz, P.
In close collaboration with the group from Strasbourg, Saclay has been developing fast monolithic active pixel sensors for future vertex detectors. This presentation gives some recent results from the MIMOSA serie, emphazising the participation of the group.
Mechanical design of a single-axis monolithic accelerometer for advanced seismic attenuation systems
NASA Astrophysics Data System (ADS)
Bertolini, Alessandro; DeSalvo, Riccardo; Fidecaro, Francesco; Francesconi, Mario; Marka, Szabolcs; Sannibale, Virginio; Simonetti, Duccio; Takamori, Akiteru; Tariq, Hareem
2006-01-01
The design and mechanics for a new very-low noise low frequency horizontal accelerometer is presented. The sensor has been designed to be integrated in an advanced seismic isolation system for interferometric gravitational wave detectors. The motion of a small monolithic folded-pendulum (FP) is monitored by a high resolution capacitance displacement sensor; a feedback force actuator keeps the mass at the equilibrium position. The feedback signal is proportional to the ground acceleration in the frequency range 0-150 Hz. The very high mechanical quality factor, Q≃3000 at a resonant frequency of 0.5 Hz, reduces the Brownian motion of the proof mass of the accelerometer below the resolution of the displacement sensor. This scheme enables the accelerometer to detect the inertial displacement of a platform with a root-mean-square noise less than 1 nm, integrated over the frequency band from 0.01 to 150 Hz. The FP geometry, combined with the monolithic design, allows the accelerometer to be extremely directional. A vertical-horizontal coupling ranging better than 10-3 has been achieved. A detailed account of the design and construction of the accelerometer is reported here. The instrument is fully ultra-high vacuum compatible and has been tested and approved for integration in seismic attenuation system of japanese TAMA 300 gravitational wave detector. The monolithic design also makes the accelerometer suitable for cryogenic operation.
NASA Astrophysics Data System (ADS)
Bhattacharya, P.; Hazari, A.; Jahangir, S.
2018-02-01
GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs 10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.
A 30 GHz monolithic receive module technology assessment
NASA Technical Reports Server (NTRS)
Geddes, J.; Sokolov, V.; Bauhahn, P.; Contolatis, T.
1988-01-01
This report is a technology assessment relevant to the 30 GHz Monolithic Receive Module development. It is based on results obtained on the present NASA Contract (NAS3-23356) as well as on information gathered from literature and other industry sources. To date the on-going Honeywell program has concentrated on demonstrating the so-called interconnected receive module which consists of four monolithic chips - the low noise front-end amplifier (LNA), the five bit phase shifter (PS), the gain control amplifier (GC), and the RF to IF downconverter (RF/IF). Results on all four individual chips have been obtained and interconnection of the first three functions has been accomplished. Future work on this contract is aimed at a higher level of integration, i.e., integration of the first three functions (LNA + PS + GC) on a single GaAs chip. The report presents the status of this technology and projections of its future directions.
Sonker, Mukul; Knob, Radim; Sahore, Vishal; Woolley, Adam T
2017-07-01
Integration in microfluidics is important for achieving automation. Sample preconcentration integrated with separation in a microfluidic setup can have a substantial impact on rapid analysis of low-abundance disease biomarkers. Here, we have developed a microfluidic device that uses pH-mediated solid-phase extraction (SPE) for the enrichment and elution of preterm birth (PTB) biomarkers. Furthermore, this SPE module was integrated with microchip electrophoresis for combined enrichment and separation of multiple analytes, including a PTB peptide biomarker (P1). A reversed-phase octyl methacrylate monolith was polymerized as the SPE medium in polyethylene glycol diacrylate modified cyclic olefin copolymer microfluidic channels. Eluent for pH-mediated SPE of PTB biomarkers on the monolith was optimized using different pH values and ionic concentrations. Nearly 50-fold enrichment was observed in single channel SPE devices for a low nanomolar solution of P1, with great elution time reproducibility (<7% RSD). The monolith binding capacity was determined to be 400 pg (0.2 pmol). A mixture of a model peptide (FA) and a PTB biomarker (P1) was extracted, eluted, injected, and then separated by microchip electrophoresis in our integrated device with ∼15-fold enrichment. This device shows important progress towards an integrated electrokinetically operated platform for preconcentration and separation of biomarkers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Cao, Zhen; Ren, Kangning; Wu, Hongkai; Yobas, Levent
2012-01-01
We demonstrate monolithic integration of fine cylindrical glass microcapillaries (diameter ∼1 μm) on silicon and evaluate their performance for electrophoretic separation of biomolecules. Such microcapillaries are achieved through thermal reflow of a glass layer on microstructured silicon whereby slender voids are moulded into cylindrical tubes. The process allows self-enclosed microcapillaries with a uniform profile. A simplified method is also described to integrate the microcapillaries with a sample-injection cross without the requirement of glass etching. The 10-mm-long microcapillaries sustain field intensities up to 90 kV/m and limit the temperature excursions due to Joule heating to a few degrees Celsius only. PMID:23874369
NASA Astrophysics Data System (ADS)
Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei
2015-03-01
We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.
Effects of ambient temperature changes on integral bridges.
DOT National Transportation Integrated Search
2008-09-01
Integral bridges (IBs) are jointless bridges whereby the deck is continuous and monolithic with abutment walls. IBs are outperforming their non-integral counterparts in economy and safety. Their principal advantages are derived from the absence of ex...
Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.
Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo
2017-02-01
Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Phased Arrays 1985 Symposium - Proceedings
1985-08-01
have served the logic industry well, and appropriate versions can do the same for micruwdve drid millimeter * wave technology, An aspect of phased...continuing revolutions of the logic industry and the microwave monolithic integrated circuit community are bringing relevant technology closer to the array...monolithic phased array antennas, and discuss their relative advantages and disadvantages . Considerations such as bandwidth, maxianiru scan range, feed
10Gbps monolithic silicon FTTH transceiver without laser diode for a new PON configuration.
Zhang, Jing; Liow, Tsung-Yang; Lo, Guo-Qiang; Kwong, Dim-Lee
2010-03-01
A new passive optical network (PON) configuration and a novel silicon photonic transceiver architecture for optical network unit (ONU) are proposed, eliminating the need for an internal laser source in ONU. The Si transceiver is fully monolithic, includes integrated wavelength division multiplexing (WDM) filters, modulators (MOD) and photo-detectors (PD), and demonstrates low-cost high volume manufacturability.
Electrically driven monolithic subwavelength plasmonic interconnect circuits
Liu, Yang; Zhang, Jiasen; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao
2017-01-01
In the post-Moore era, an electrically driven monolithic optoelectronic integrated circuit (OEIC) fabricated from a single material is pursued globally to enable the construction of wafer-scale compact computing systems with powerful processing capabilities and low-power consumption. We report a monolithic plasmonic interconnect circuit (PIC) consisting of a photovoltaic (PV) cascading detector, Au-strip waveguides, and electrically driven surface plasmon polariton (SPP) sources. These components are fabricated from carbon nanotubes (CNTs) via a CMOS (complementary metal-oxide semiconductor)–compatible doping-free technique in the same feature size, which can be reduced to deep-subwavelength scale (~λ/7 to λ/95, λ = 1340 nm) compared with the 14-nm technique node. An OEIC could potentially be configured as a repeater for data transport because of its “photovoltaic” operation mode to transform SPP energy directly into electricity to drive subsequent electronic circuits. Moreover, chip-scale throughput capability has also been demonstrated by fabricating a 20 × 20 PIC array on a 10 mm × 10 mm wafer. Tailoring photonics for monolithic integration with electronics beyond the diffraction limit opens a new era of chip-level nanoscale electronic-photonic systems, introducing a new path to innovate toward much faster, smaller, and cheaper computing frameworks. PMID:29062890
Monolithically, widely tunable quantum cascade lasers based on a heterogeneous active region design.
Zhou, Wenjia; Bandyopadhyay, Neelanjan; Wu, Donghai; McClintock, Ryan; Razeghi, Manijeh
2016-06-08
Quantum cascade lasers (QCLs) have become important laser sources for accessing the mid-infrared (mid-IR) spectral range, achieving watt-level continuous wave operation in a compact package at room temperature. However, up to now, wavelength tuning, which is desirable for most applications, has relied on external cavity feedback or exhibited a limited monolithic tuning range. Here we demonstrate a widely tunable QCL source over the 6.2 to 9.1 μm wavelength range with a single emitting aperture by integrating an eight-laser sampled grating distributed feedback laser array with an on-chip beam combiner. The laser gain medium is based on a five-core heterogeneous QCL wafer. A compact tunable laser system was built to drive the individual lasers within the array and produce any desired wavelength within the available spectral range. A rapid, broadband spectral measurement (520 cm(-1)) of methane using the tunable laser source shows excellent agreement to a measurement made using a standard low-speed infrared spectrometer. This monolithic, widely tunable laser technology is compact, with no moving parts, and will open new opportunities for MIR spectroscopy and chemical sensing.
Monolithically, widely tunable quantum cascade lasers based on a heterogeneous active region design
Zhou, Wenjia; Bandyopadhyay, Neelanjan; Wu, Donghai; McClintock, Ryan; Razeghi, Manijeh
2016-01-01
Quantum cascade lasers (QCLs) have become important laser sources for accessing the mid-infrared (mid-IR) spectral range, achieving watt-level continuous wave operation in a compact package at room temperature. However, up to now, wavelength tuning, which is desirable for most applications, has relied on external cavity feedback or exhibited a limited monolithic tuning range. Here we demonstrate a widely tunable QCL source over the 6.2 to 9.1 μm wavelength range with a single emitting aperture by integrating an eight-laser sampled grating distributed feedback laser array with an on-chip beam combiner. The laser gain medium is based on a five-core heterogeneous QCL wafer. A compact tunable laser system was built to drive the individual lasers within the array and produce any desired wavelength within the available spectral range. A rapid, broadband spectral measurement (520 cm−1) of methane using the tunable laser source shows excellent agreement to a measurement made using a standard low-speed infrared spectrometer. This monolithic, widely tunable laser technology is compact, with no moving parts, and will open new opportunities for MIR spectroscopy and chemical sensing. PMID:27270634
NASA Astrophysics Data System (ADS)
Chen, Xin; Zhao, Jianyi; Zhou, Ning; Huang, Xiaodong; Cao, Mingde; Wang, Lei; Liu, Wen
2015-01-01
The monolithic integration of 1.5-μm four channels phase shift distributed feedback lasers array (DFB-LD array) with 4×1 multi-mode interference (MMI) optical combiner is demonstrated. A home developed process mainly consists of butt-joint regrowth (BJR) and simultaneous thermal and ultraviolet nanoimprint lithography (STU-NIL) is implemented to fabricate gratings and integrated devices. The threshold currents of the lasers are less than 10 mA and the side mode suppression ratios (SMSR) are better than 40 dB for all channels. Quasi-continuous tuning is realized over 7.5 nm wavelength region with the 30 °C temperature variation. The results indicate that the integration device we proposed can be used in wavelength division multiplexing passive optical networks (WDM-PON).
Nordman, Nina; Barrios-Lopez, Brianda; Laurén, Susanna; Suvanto, Pia; Kotiaho, Tapio; Franssila, Sami; Kostiainen, Risto; Sikanen, Tiina
2015-02-01
We report a simple protocol for fabrication of shape-anchored porous polymer monoliths (PPMs) for on-chip SPE prior to online microchip electrophoresis (ME) separation and on-chip (ESI/MS). The chip design comprises a standard ME separation channel with simple cross injector and a fully integrated ESI emitter featuring coaxial sheath liquid channel. The monolith zone was prepared in situ at the injection cross by laser-initiated photopolymerization through the microchip cover layer. The use of high-power laser allowed not only maskless patterning of a precisely defined monolith zone, but also faster exposure time (here, 7 min) compared with flood exposure UV lamps. The size of the monolith pattern was defined by the diameter of the laser output (∅500 μm) and the porosity was geared toward high through-flow to allow electrokinetic actuation and thus avoid coupling to external pumps. Placing the monolith at the injection cross enabled firm anchoring based on its cross-shape so that no surface premodification with anchoring linkers was needed. In addition, sample loading and subsequent injection (elution) to the separation channel could be performed similar to standard ME setup. As a result, 15- to 23-fold enrichment factors were obtained already at loading (preconcentration) times as short as 25 s without sacrificing the throughput of ME analysis. The performance of the SPE-ME-ESI/MS chip was repeatable within 3.1% and 11.5% RSD (n = 3) in terms of migration time and peak height, respectively, and linear correlation was observed between the loading time and peak area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Method of making improved gas storage carbon with enhanced thermal conductivity
Burchell, Timothy D [Oak Ridge, TN; Rogers, Michael R [Knoxville, TN
2002-11-05
A method of making an adsorbent carbon fiber based monolith having improved methane gas storage capabilities is disclosed. Additionally, the monolithic nature of the storage carbon allows it to exhibit greater thermal conductivity than conventional granular activated carbon or powdered activated carbon storage beds. The storage of methane gas is achieved through the process of physical adsorption in the micropores that are developed in the structure of the adsorbent monolith. The disclosed monolith is capable of storing greater than 150 V/V of methane [i.e., >150 STP (101.325 KPa, 298K) volumes of methane per unit volume of storage vessel internal volume] at a pressure of 3.5 MPa (500 psi).
Hydrogen production from bio-fuels using precious metal catalysts
NASA Astrophysics Data System (ADS)
Pasel, Joachim; Wohlrab, Sebastian; Rotov, Mikhail; Löhken, Katrin; Peters, Ralf; Stolten, Detlef
2017-11-01
Fuel cell systems with integrated autothermal reforming unit require active and robust catalysts for H2 production. Thus, an experimental screening of catalysts for autothermal reforming of commercial biodiesel fuel was performed. Catalysts consisted of a monolithic cordierite substrate, an oxide support (γ-Al2O3) and Pt, Ru, Ni, PtRh and PtRu as active phase. Experiments were run by widely varying the O2/C and H2O/C molar ratios at different gas hourly space velocities. Fresh and aged catalysts were characterized by temperature programmed methods and thermogravimetry to find correlations with catalytic activity and stability.
NASA Astrophysics Data System (ADS)
Zhao, Jianyi; Chen, Xin; Zhou, Ning; Huang, Xiaodong; Cao, Mingde; Wang, Lei; Liu, Wen
2015-03-01
A 16-channel monolithically integrated distributed feedback (DFB) laser array with arrayed waveguide gratings (AWGs) multiplexer and semiconductor optical amplifier (SOA) has been fabricated using nanoimprint technology. Selective lasing wavelength with 200 GHz frequency space has been obtained. The typical threshold current is between 20 mA and 30 mA. The output power is higher than 1 mW with 350 mA current in SOA. The side mode suppression ratio (SMSR) of the spectrum is better than 40 dB.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.
This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.
Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji
2012-04-09
On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tzuang, C.K.C.
1986-01-01
Various MMIC (monolithic microwave integrated circuit) planar waveguides have shown possible existence of a slow-wave propagation. In many practical applications of these slow-wave circuits, the semiconductor devices have nonuniform material properties that may affect the slow-wave propagation. In the first part of the dissertation, the effects of the nonuniform material properties are studied by a finite-element method. In addition, the transient pulse excitations of these slow-wave circuits also have great theoretical and practical interests. In the second part, the time-domain analysis of a slow-wave coplanar waveguide is presented.
Synergism between polyurethane and polydopamine in the synthesis of Ni-Fe alloy monoliths.
Naresh Kumar, Thangavel; Sivabalan, Santhana; Chandrasekaran, Naveen; Phani, Kanala Lakshminarasimha
2015-02-04
Herein, we report the first synthesis of a light-weight macroporous 3-D alloy monolith of Ni-Fe/C using synergism between polydopamine (pDA) and polyurethane (pU); in situ formed polyurethane (pU) enables efficient mixing of pDA (carbon source) and Ni-FeOx resulting in Ni-Fe alloy monoliths at a temperature as low as ∼600 °C. The monolithic Ni-Fe/C exhibits enhanced oxygen evolution activity.
Zhu, Ning Hua; Zhang, Hong Guang; Man, Jiang Wei; Zhu, Hong Liang; Ke, Jian Hong; Liu, Yu; Wang, Xin; Yuan, Hai Qing; Xie, Liang; Wang, Wei
2009-11-23
This paper presents a new technique to generate microwave signal using an electro-absorption modulator (EAM) integrated with a distributed feedback (DFB) laser subject to optical injection. Experiments show that the frequency of the generated microwave can be tuned by changing the wavelength of the external laser or adjusting the bias voltage of the EAM. The frequency response of the EAM is studied and found to be unsmooth due to packaging parasitic effects and four-wave mixing effect occurring in the active layer of the DFB laser. It is also demonstrated that an EA modulator integrated in between two DFB lasers can be used instead of the EML under optical injection. This integrated chip can be used to realize a monolithically integrated tunable microwave source.
Eigenpolarization theory of monolithic nonplanar ring oscillators
NASA Technical Reports Server (NTRS)
Nilsson, Alan C.; Gustafson, Eric K.; Byer, Robert L.
1989-01-01
Diode-laser-pumped monolithic nonplanar ring oscillators (NPROs) in an applied magnetic field can operate as unidirectional traveling-wave lasers. The diode laser pumping, monolithic construction, and unidirectional oscillation lead to narrow linewidth radiation. Here, a comprehensive theory of the eigenpolarizations of a monolithic NPRO is presented. It is shown how the properties of the integral optical diode that forces unidirectional operation depend on the choice of the gain medium, the applied magnetic field, the output coupler, and the geometry of the nonplanar ring light path. Using optical equivalence theorems to gain insight into the polarization characteristics of the NPRO, a strategy for designing NPROs with low thresholds and large loss nonreciprocities is given. An analysis of the eigenpolarizations for one such NPRO is presented, alternative optimization approaches are considered, and the prospects for further reducing the linewidths of these lasers are briefly discussed.
Sun, Xiaoxia; Wang, Kunpeng; Shu, Yu; Zou, Fangdong; Zhang, Boxing; Sun, Guangwu; Uyama, Hiroshi; Wang, Xinhou
2017-01-01
In this study, novel photocatalyst monolith materials were successfully fabricated by a non-solvent induced phase separation (NIPS) technique. By adding a certain amount of ethyl acetate (as non-solvent) into a cellulose/LiCl/N,N-dimethylacetamide (DMAc) solution, and successively adding titanium dioxide (TiO2) nanoparticles (NPs), cellulose/TiO2 composite monoliths with hierarchically porous structures were easily formed. The obtained composite monoliths possessed mesopores, and two kinds of macropores. Scanning Electron Microscope (SEM), Energy Dispersive Spectroscopy (EDS), Fourier Transform Infrared Spectroscopy (FT-IR), X-ray Diffraction (XRD), Brunauer-Emmett-Teller (BET), and Ultraviolet-visible Spectroscopy (UV-Vis) measurements were adopted to characterize the cellulose/TiO2 composite monolith. The cellulose/TiO2 composite monoliths showed high efficiency of photocatalytic activity in the decomposition of methylene blue dye, which was decomposed up to 99% within 60 min under UV light. Moreover, the composite monoliths could retain 90% of the photodegradation efficiency after 10 cycles. The novel NIPS technique has great potential for fabricating recyclable photocatalysts with highly efficiency. PMID:28772734
Porcar, Raúl; Nuevo, Daniel; García-Verdugo, Eduardo; Lozano, Pedro; Sanchez-Marcano, José; Burguete, M Isabel; Luis, Santiago V
2018-03-07
Porous monolithic advanced functional materials based on supported ionic liquid-like phase (SILLP) systems were used for the preparation of oleophilic and hydrophobic cylindrical membranes and successfully tested as eco-friendly and safe systems for oil/water separation and for the continuous integration of catalytic and separation processes in an aqueous-organic biphasic reaction system.
Exploratory High-Fidelity Aerostructural Optimization Using an Efficient Monolithic Solution Method
NASA Astrophysics Data System (ADS)
Zhang, Jenmy Zimi
This thesis is motivated by the desire to discover fuel efficient aircraft concepts through exploratory design. An optimization methodology based on tightly integrated high-fidelity aerostructural analysis is proposed, which has the flexibility, robustness, and efficiency to contribute to this goal. The present aerostructural optimization methodology uses an integrated geometry parameterization and mesh movement strategy, which was initially proposed for aerodynamic shape optimization. This integrated approach provides the optimizer with a large amount of geometric freedom for conducting exploratory design, while allowing for efficient and robust mesh movement in the presence of substantial shape changes. In extending this approach to aerostructural optimization, this thesis has addressed a number of important challenges. A structural mesh deformation strategy has been introduced to translate consistently the shape changes described by the geometry parameterization to the structural model. A three-field formulation of the discrete steady aerostructural residual couples the mesh movement equations with the three-dimensional Euler equations and a linear structural analysis. Gradients needed for optimization are computed with a three-field coupled adjoint approach. A number of investigations have been conducted to demonstrate the suitability and accuracy of the present methodology for use in aerostructural optimization involving substantial shape changes. Robustness and efficiency in the coupled solution algorithms is crucial to the success of an exploratory optimization. This thesis therefore also focuses on the design of an effective monolithic solution algorithm for the proposed methodology. This involves using a Newton-Krylov method for the aerostructural analysis and a preconditioned Krylov subspace method for the coupled adjoint solution. Several aspects of the monolithic solution method have been investigated. These include appropriate strategies for scaling and matrix-vector product evaluation, as well as block preconditioning techniques that preserve the modularity between subproblems. The monolithic solution method is applied to problems with varying degrees of fluid-structural coupling, as well as a wing span optimization study. The monolithic solution algorithm typically requires 20%-70% less computing time than its partitioned counterpart. This advantage increases with increasing wing flexibility. The performance of the monolithic solution method is also much less sensitive to the choice of the solution parameter.
NASA Technical Reports Server (NTRS)
Bhasin, K. B.; Connolly, D. J.
1986-01-01
Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.
NASA Astrophysics Data System (ADS)
Thomas, Robert; Williams, Gwilym I.; Ladak, Sam; Smowton, Peter M.
2017-02-01
The integration of multiple optical elements on a common substrate to create photonic integrated circuits (PIC) has been successfully applied in: fibre-optic communications, photonic computing and optical sensing. The push towards III-Vs on silicon promises a new generation of integrated devices that combine the advantages of both integrated electronics and optics in a single substrate. III-V edge emitting laser diodes offer high efficiency and low threshold currents making them ideal candidates for the optically active elements of the next generation of PICs. Nevertheless, the highly divergent and asymmetric beam shapes intrinsic to these devices limits the efficiency with which optical elements can be free space coupled intra-chip; a capability particularly desirable for optical sensing applications e.g. [1]. Furthermore, the monolithic nature of the integrated approach prohibits the use of macroscopic lenses to improve coupling. However, with the advent of 3D direct laser writing, three dimensional lenses can now be manufactured on a microscopic-scale [2], making the use of micro-lens technology for enhanced free space coupling of integrated optical elements feasible. Here we demonstrate the first use of 3D micro-lenses to improve the coupling efficiency of monolithically integrated lasers. Fabricated from IP-dip photoresist using a Nanoscribe GmbH 3D lithography tool, the lenses are embedded directly onto a structured GaInP/AlGaInP substrate containing arrays of ridge lasers free space coupled to one another via a 200 μm air gap. We compare the coupling efficiency of these lasers with and without micro-lenses through photo-voltage and beam profile measurements and discuss optimisation of lens design.
Design of catalytic monoliths for closed-cycle carbon dioxide lasers
NASA Technical Reports Server (NTRS)
Herz, R. K.; Guinn, K.; Goldblum, S.; Noskowski, E.
1989-01-01
Pulsed carbon dioxide (CO2) lasers have many applications in aeronautics, space research, weather monitoring and other areas. Full exploitation of the potential of these lasers in hampered by the dissociation of CO2 that occurs during laser operation. The development of closed-cycle CO2 lasers requires active CO-O2 recombination (CO oxidation) catalyst and design methods for implementation of catalysts in CO2 laser systems. A monolith catalyst section model and associated design computer program, LASCAT, are presented to assist in the design of a monolith catalyst section of a closed cycle CO2 laser system. Using LASCAT,the designer is able to specify a number of system parameters and determine the monolith section performance. Trade-offs between the catalyst activity, catalyst dimensions, monolith dimensions, pressure drop, O2 conversion, and other variables can be explored and adjusted to meet system design specifications. An introduction describes a typical closed-cycle CO2 system, and indicates some advantages of a closed cycle laser system over an open cycle system and some advantages of monolith support over other types of supports. The development and use of a monolith catalyst model is presented. The results of a design study and a discussion of general design rules are given.
Integrated ultra-low-loss resonator on a chip
NASA Astrophysics Data System (ADS)
Poon, Joyce K. S.
2018-05-01
Exquisitely low-loss optical resonators have thus far remained discrete. Monolithic integration of waveguides with silica resonators that have Q factors >100 million charts a path toward incorporating these devices in photonic circuits.
High-voltage integrated active quenching circuit for single photon count rate up to 80 Mcounts/s.
Acconcia, Giulia; Rech, Ivan; Gulinatti, Angelo; Ghioni, Massimo
2016-08-08
Single photon avalanche diodes (SPADs) have been subject to a fast improvement in recent years. In particular, custom technologies specifically developed to fabricate SPAD devices give the designer the freedom to pursue the best detector performance required by applications. A significant breakthrough in this field is represented by the recent introduction of a red enhanced SPAD (RE-SPAD) technology, capable of attaining a good photon detection efficiency in the near infrared range (e.g. 40% at a wavelength of 800 nm) while maintaining a remarkable timing resolution of about 100ps full width at half maximum. Being planar, the RE-SPAD custom technology opened the way to the development of SPAD arrays particularly suited for demanding applications in the field of life sciences. However, to achieve such excellent performance custom SPAD detectors must be operated with an external active quenching circuit (AQC) designed on purpose. Next steps toward the development of compact and practical multichannel systems will require a new generation of monolithically integrated AQC arrays. In this paper we present a new, fully integrated AQC fabricated in a high-voltage 0.18 µm CMOS technology able to provide quenching pulses up to 50 Volts with fast leading and trailing edges. Although specifically designed for optimal operation of RE-SPAD devices, the new AQC is quite versatile: it can be used with any SPAD detector, regardless its fabrication technology, reaching remarkable count rates up to 80 Mcounts/s and generating a photon detection pulse with a timing jitter as low as 119 ps full width at half maximum. The compact design of our circuit has been specifically laid out to make this IC a suitable building block for monolithically integrated AQC arrays.
Efficient Monolithic Perovskite/Silicon Tandem Solar Cell with Cell Area >1 cm(2).
Werner, Jérémie; Weng, Ching-Hsun; Walter, Arnaud; Fesquet, Luc; Seif, Johannes Peter; De Wolf, Stefaan; Niesen, Bjoern; Ballif, Christophe
2016-01-07
Monolithic perovskite/crystalline silicon tandem solar cells hold great promise for further performance improvement of well-established silicon photovoltaics; however, monolithic tandem integration is challenging, evidenced by the modest performances and small-area devices reported so far. Here we present first a low-temperature process for semitransparent perovskite solar cells, yielding efficiencies of up to 14.5%. Then, we implement this process to fabricate monolithic perovskite/silicon heterojunction tandem solar cells yielding efficiencies of up to 21.2 and 19.2% for cell areas of 0.17 and 1.22 cm(2), respectively. Both efficiencies are well above those of the involved subcells. These single-junction perovskite and tandem solar cells are hysteresis-free and demonstrate steady performance under maximum power point tracking for several minutes. Finally, we present the effects of varying the intermediate recombination layer and hole transport layer thicknesses on tandem cell photocurrent generation, experimentally and by transfer matrix simulations.
A 30 Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit
NASA Astrophysics Data System (ADS)
Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Yuan, Wei; Zhu, Guixia; Zhu, Hongbo; Feng, Meixin; Sun, Qian; Liu, Yuhuai; Wang, Yongjin
2017-07-01
We propose, fabricate and characterize photonic integration of a InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide, ring resonator and InGaN/GaN MQW-photodiode on a single chip, in which the photonic circuit is suspended by the support beams. Both experimental observations and simulation results illustrate the manipulation of in-plane light coupling and propagation by the waveguide and the ring resonator. The monolithic photonic circuit forms an in-plane data communication system using visible light. When the two suspended InGaN/GaN MQW-diodes simultaneously serve as the transmitter and the receiver, an in-plane full-duplex light communication is experimentally demonstrated with a transmission rate of 30 Mbps, and the superimposed signals are extracted using the self-interference cancellation method. The suspended photonic circuit creates new possibilities for exploring the in-plane full-duplex light communication and manufacturing complex GaN-based monolithic photonic integrations.
NASA Technical Reports Server (NTRS)
Kunath, R. R.; Bhasin, K. B.
1986-01-01
The desire for rapid beam reconfigurability and steering has led to the exploration of new techniques. Optical techniques have been suggested as potential candidates for implementing these needs. Candidates generally fall into one of two areas: those using fiber optic Beam Forming Networks (BFNs) and those using optically processed BFNs. Both techniques utilize GaAs Monolithic Microwave Integrated Circuits (MMICs) in the BFN, but the role of the MMIC for providing phase and amplitude variations is largely eliminated by some new optical processing techniques. This paper discusses these two types of optical BFN designs and provides conceptual designs of both systems.
Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems
NASA Astrophysics Data System (ADS)
Ku, Walter H.
1987-08-01
This interim technical report presents results of research on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. A specific objective is to extend the state-of-the-art of the Computer Aided Design (CAD) of the monolithic microwave and millimeter wave integrated circuits (MIMIC). In this reporting period, we have derived a new model for the high electron mobility transistor (HEMT) based on a nonlinear charge control formulation which takes into consideration the variation of the 2DEG distance offset from the heterointerface as a function of bias. Pseudomorphic InGaAs/GaAs HEMT devices have been successfully fabricated at UCSD. For a 1 micron gate length, a maximum transconductance of 320 mS/mm was obtained. In cooperation with TRW, devices with 0.15 micron and 0.25 micron gate lengths have been successfully fabricated and tested. New results on the design of ultra-wideband distributed amplifiers using 0.15 micron pseudomorphic InGaAs/GaAs HEMT's have also been obtained. In addition, two-dimensional models of the submicron MESFET's, HEMT's and HBT's are currently being developed for the CRAY X-MP/48 supercomputer. Preliminary results obtained are also presented in this report.
NASA Astrophysics Data System (ADS)
Chou, Yeong-Chang; Leung, Denise; Lai, Richard; Grundbacher, Ron; Scarpulla, John; Barsky, Mike; Nishimoto, Matt; Eng, David; Liu, Po-Hsin; Oki, Aaron; Streit, Dwight
2002-02-01
The high-reliability performance of K-band microwave monolithic integrated circuit (MMIC) amplifiers fabricated with 0.1 μm gate length InGaAs/InAlAs/InP high electron mobility transistors (HEMTs) on 3-inch wafers using a high volume production process technology is reported. Operating at an accelerated life test condition of Vds=1.5 V and Ids=150 mA/mm, two-stage balanced amplifiers were lifetested at two-temperatures (T1=230°C, and T2=250°C) in nitrogen ambient. The activation energy (Ea) is as high as 1.5 eV, achieving a projected median-time-to-failure (MTTF) >1× 106 h at a 125°C of junction temperature. MTTF was determined by 2-temperature constant current stress using |Δ S21|>1.0 dB as the failure criteria. This is the first report of high reliability 0.1 μm InGaAs/InAlAs/InP HEMT MMICs based on small-signal microwave characteristics. This result demonstrates a reliable InGaAs/InAlAs/InP HEMT production technology.
NASA Astrophysics Data System (ADS)
Wu, Chi; Keo, Sam A.; Yao, X. S.; Turner, Tasha E.; Davis, Lawrence J.; Young, Martin G.; Maleki, Lute; Forouhar, Siamak
1998-08-01
The microwave optoelectronic oscillator (OEO) has been demonstrated on a breadboard. The future trend is to integrate the whole OEO on a chip, which requires the development of high power and high efficiency integrated photonic components. In this paper, we will present the design and fabrication of an integrated semiconductor laser/modulator using the identical active layer approach on InGaAsP/InP material. The best devices have threshold currents of 50-mA at room temperature for CW operation. The device length is approximately 3-mm, resulting in a mode spacing of 14 GHz. For only 5-dBm microwave power applied to the modulator section, modulation response with 30 dB resonate enhancement has been observed. This work shows the promise for an on-chip integrated OEO.
Low-bandgap, monolithic, multi-bandgap, optoelectronic devices
Wanlass, Mark W.; Carapella, Jeffrey J.
2016-01-05
Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
Low-bandgap, monolithic, multi-bandgap, optoelectronic devices
Wanlass, Mark W.; Carapella, Jeffrey J.
2014-07-08
Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
Low-bandgap, monolithic, multi-bandgap, optoelectronic devices
Wanlass, Mark W.; Carapella, Jeffrey J.
2016-03-22
Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip
Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun; ...
2017-03-27
A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less
On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun
A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less
Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers
NASA Astrophysics Data System (ADS)
Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.
2018-02-01
In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.
Monolithic silicon-photonic platforms in state-of-the-art CMOS SOI processes [Invited].
Stojanović, Vladimir; Ram, Rajeev J; Popović, Milos; Lin, Sen; Moazeni, Sajjad; Wade, Mark; Sun, Chen; Alloatti, Luca; Atabaki, Amir; Pavanello, Fabio; Mehta, Nandish; Bhargava, Pavan
2018-05-14
Integrating photonics with advanced electronics leverages transistor performance, process fidelity and package integration, to enable a new class of systems-on-a-chip for a variety of applications ranging from computing and communications to sensing and imaging. Monolithic silicon photonics is a promising solution to meet the energy efficiency, sensitivity, and cost requirements of these applications. In this review paper, we take a comprehensive view of the performance of the silicon-photonic technologies developed to date for photonic interconnect applications. We also present the latest performance and results of our "zero-change" silicon photonics platforms in 45 nm and 32 nm SOI CMOS. The results indicate that the 45 nm and 32 nm processes provide a "sweet-spot" for adding photonic capability and enhancing integrated system applications beyond the Moore-scaling, while being able to offload major communication tasks from more deeply-scaled compute and memory chips without complicated 3D integration approaches.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jantzen, C. M.; Crawford, C. L.; Bannochie, C. J.
The U.S. Department of Energy’s Office of River Protection (ORP) is responsible for the retrieval, treatment, immobilization, and disposal of Hanford’s tank waste. A key aspect of the River Protection Project (RPP) cleanup mission is to construct and operate the Hanford Tank Waste Treatment and Immobilization Plant (WTP). The WTP will separate the tank waste into high-level and low-activity waste (LAW) fractions, both of which will subsequently be vitrified. The projected throughput capacity of the WTP LAW Vitrification Facility is insufficient to complete the RPP mission in the time frame required by the Hanford Federal Facility Agreement and Consent Order,more » also known as the Tri-Party Agreement (TPA), i.e. December 31, 2047. Supplemental Treatment is likely to be required both to meet the TPA treatment requirements as well as to more cost effectively complete the tank waste treatment mission. The Supplemental Treatment chosen will immobilize that portion of the retrieved LAW that is not sent to the WTP’s LAW Vitrification facility into a solidified waste form. The solidified waste will then be disposed on the Hanford site in the Integrated Disposal Facility (IDF). Fluidized Bed Steam Reforming (FBSR) offers a moderate temperature (700-750°C) continuous method by which LAW can be processed irrespective of whether the waste contain organics, nitrates, sulfates/sulfides, chlorides, fluorides, volatile radionuclides or other aqueous components. The FBSR technology can process these wastes into a crystalline ceramic (mineral) waste form. The mineral waste form that is produced by co-processing waste with kaolin clay in an FBSR process has been shown to be comparable to LAW glass, i.e. leaches Tc-99, Re and Na at <2g/m 2 during ASTM C1285 (Product Consistency) durability testing. Monolithing of the granular FBSR product was investigated to prevent dispersion during transport or burial/storage. Monolithing in an inorganic geopolymer binder, which is amorphous, macro-encapsulates the granules, and the monoliths pass ANSI/ANS 16.1 and ASTM C1308 durability testing with Re achieving a Leach Index (LI) of 9 (the Hanford Integrated Disposal Facility, IDF, criteria for Tc-99) after a few days and Na achieving an LI of >6 (the Hanford IDF criteria for Na) in the first few hours. The granular and monolithic waste forms also pass the EPA Toxicity Characteristic Leaching Procedure (TCLP) for all Resource Conservation and Recovery Act (RCRA) components at the Universal Treatment Standards (UTS). Two identical Benchscale Steam Reformers (BSR) were designed and constructed at SRNL, one to treat non-radioactive simulants and the other to treat actual radioactive wastes. The results from the non-radioactive BSR were used to determine the parameters needed to operate the radioactive BSR in order to confirm the findings of non-radioactive FBSR pilot scale and engineering scale tests and to qualify an FBSR LAW waste form for applications at Hanford. Radioactive testing commenced using SRS LAW from Tank 50 chemically trimmed to look like Hanford’s blended LAW known as the Rassat simulant as this simulant composition had been tested in the non-radioactive BSR, the non-radioactive pilot scale FBSR at the Science Applications International Corporation-Science and Technology Applications Research (SAIC-STAR) facility in Idaho Falls, ID and in the TTT Engineering Scale Technology Demonstration (ESTD) at Hazen Research Inc. (HRI) in Denver, CO. This provided a “tie back” between radioactive BSR testing and non-radioactive BSR, pilot scale, and engineering scale testing. Approximately six hundred grams of non-radioactive and radioactive BSR product were made for extensive testing and comparison to the non-radioactive pilot scale tests performed in 2004 at SAIC-STAR and the engineering scale test performed in 2008 at HRI with the Rassat simulant. The same mineral phases and off-gas species were found in the radioactive and non-radioactive testing. The granular ESTD and BSR products (radioactive and non-radioactive) were analyzed for total constituents and durability tested as a granular waste form. A subset of the granular material was stabilized in a clay based geopolymer matrix at 42% and 65% FBSR loadings and durability tested as a monolith waste form. The 65 wt% FBSR loaded monolith made with clay (radioactive) was more durable than the 67-68 wt% FBSR loaded monoliths made from fly ash (non-radioactive) based on short term PCT testing. Long term, 90 to 107 day, ASTM C1308 testing (similar to ANSI/ANS 16.1 testing) was only performed on two fly ash geopolymer monoliths at 67-68 wt% FBSR loading and three clay geopolymer monoliths at 42 wt% FBSR loading. More clay geopolymers need to be made and tested at longer times at higher FBSR loadings for comparison to the fly ash monoliths. Monoliths made with metakaolin (heat treated) clay are of a more constant composition and are very reactive as the heat treated clay is amorphous and alkali activated. The monoliths made with fly ash are subject to the inherent compositional variation found in fly ash as it is a waste product from burning coal and it contains unreactive components such as mullite. However, both the fly ash and the clay based monoliths perform well in long term ASTM C1308 testing.« less
A silicon technology for millimeter-wave monolithic circuits
NASA Astrophysics Data System (ADS)
Stabile, P. J.; Rosen, A.
1984-12-01
A silicon millimeter-wave integrated-circuit (SIMMWIC) technology that includes high-energy ion implantation and pulsed-laser annealing, secondary ion mass spectrometry (SIMS) profile diagnostics, and novel wafer thinning has been developed. This technology has been applied to a SIMMWIC single-pole single-throw (SPST) switch and to IMPATT and p-i-n diode fabrication schemes. Thus, the SIMMWIC technology is a proven base for monolithic millimeter-wave sources and control circuit applications.
Characterisation of Vanilla—A novel active pixel sensor for radiation detection
NASA Astrophysics Data System (ADS)
Blue, A.; Bates, R.; Laing, A.; Maneuski, D.; O'Shea, V.; Clark, A.; Prydderch, M.; Turchetta, R.; Arvanitis, C.; Bohndiek, S.
2007-10-01
Novel features of a new monolithic active pixel sensor, Vanilla, with 520×520 pixels ( 25 μm square) has been characterised for the first time. Optimisation of the sensor operation was made through variation of frame rates, integration times and on-chip biases and voltages. Features such as flushed reset operation, ROI capturing and readout modes have been fully tested. Stability measurements were performed to test its suitablility for long-term applications. These results suggest the Vanilla sensor—along with bio-medical and space applications—is suitable for use in particle physics experiments.
NASA Astrophysics Data System (ADS)
Ou-Peng, Li; Yong, Zhang; Rui-Min, Xu; Wei, Cheng; Yuan, Wang; Bing, Niu; Hai-Yan, Lu
2016-05-01
Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).
Silicon-based optoelectronics: Monolithic integration for WDM
NASA Astrophysics Data System (ADS)
Pearson, Matthew Richard T.
2000-10-01
This thesis details the development of enabling technologies required for inexpensive, monolithic integration of Si-based wavelength division multiplexing (WDM) components and photodetectors. The work involves the design and fabrication of arrayed waveguide grating demultiplexers in silicon-on-insulator (SOI), the development of advanced SiGe photodetectors capable of photodetection at 1.55 mum wavelengths, and the development of a low cost fabrication technique that enables the high volume production of Si-based photonic components. Arrayed waveguide grating (AWG) demultiplexers were designed and fabricated in SOI. The fabrication of AWGs in SOI has been reported in the literature, however there are a number of design issues specific to the SOI material system that can have a large effect on device performance and design, and have not been theoretically examined in earlier work. The SOI AWGs presented in this thesis are the smallest devices of this type reported, and they exhibit performance acceptable for commercial applications. The SiGe photodetectors reported in the literature exhibit extremely low responsivities at wavelengths near 1.55 mum. We present the first use of three dimensional growth modes to enhance the photoresponse of SiGe at 1.55 mum wavelengths. Metal semiconductor-metal (MSM) photodetectors were fabricated using this undulating quantum well structure, and demonstrate the highest responsivities yet reported for a SiGe-based photodetector at 1.55 mum. These detectors were monolithically integrated with low-loss SOI waveguides, enabling integration with nearly any Si-based passive WDM component. The pursuit of inexpensive Si-based photonic components also requires the development of new manufacturing techniques that are more suitable for high volume production. This thesis presents the development of a low cost fabrication technique based on the local oxidation of silicon (LOCOS), a standard processing technique used for Si integrated circuits. This process is developed for both SiGe and SOI waveguides, but is shown to be commercially suitable only for SOI waveguide devices. The technique allows nearly any Si microelectronics fabrication facility to begin manufacturing optical components with minimal change in processing equipment or techniques. These enabling technologies provide the critical elements for inexpensive, monolithic integration in a Si-based system.
Wideband monolithically integrated front-end subsystems and components
NASA Astrophysics Data System (ADS)
Mruk, Joseph Rene
This thesis presents the analysis, design, and measurements of passive, monolithically integrated, wideband recta-coax and printed circuit board front-end components. Monolithic fabrication of antennas, impedance transformers, filters, and transitions lowers manufacturing costs by reducing assembly time and enhances performance by removing connectors and cabling between the devices. Computational design, fabrication, and measurements are used to demonstrate the capabilities of these front-end assemblies. Two-arm wideband planar log-periodic antennas fed using a horizontal feed that allows for filters and impedance transformers to be readily fabricated within the radiating region of the antenna are demonstrated. At microwave frequencies, low-cost printed circuit board processes are typically used to produce planar devices. A 1.8 to 11 GHz two-arm planar log-periodic antenna is designed with a monolithically integrated impedance transformer. Band rejection methods based on modifying the antenna aperture, use of an integrated filter, and the application of both methods are investigated with realized gain suppressions of over 25 dB achieved. The ability of standard circuit board technology to fabricate millimeter-wave devices up to 110 GHz is severely limited. Thin dielectrics are required to prevent the excitation of higher order modes in the microstrip substrate. Fabricating the thin line widths required for the antenna aperture also becomes prohibitively challenging. Surface micro-machining typically used in the fabrication of MEMS devices is capable of producing the extremely small features that can be used to fabricate antennas extending through W-band. A directly RF fed 18 to 110 GHz planar log-periodic antenna is developed. The antenna is fabricated with an integrated impedance transformer and additional transitions for measurement characterization. Singly terminated low-loss wideband millimeter-wave filters operating over V- and W- band are developed. High quality performance of an 18 to 100 GHz front-end is realized by dividing the single instantaneous antenna into two apertures operating from 18 to 50 and 50 to 100 GHz. Each channel features an impedance transformer, low-pass (low-frequency) or band-pass (high-frequency) filter, and grounded CPW launch. This dual-aperture front-end demonstrates that micromachining technology is now capable of fabricating broadband millimeter-wave components with a high degree of integration.
Waveguide device and method for making same
Forman, Michael A [San Francisco, CA
2007-08-14
A monolithic micromachined waveguide device or devices with low-loss, high-power handling, and near-optical frequency ranges is set forth. The waveguide and integrated devices are capable of transmitting near-optical frequencies due to optical-quality sidewall roughness. The device or devices are fabricated in parallel, may be mass produced using a LIGA manufacturing process, and may include a passive component such as a diplexer and/or an active capping layer capable of particularized signal processing of the waveforms propagated by the waveguide.
Park, Chan Woo; Moon, Yu Gyeong; Seong, Hyejeong; Jung, Soon Won; Oh, Ji-Young; Na, Bock Soon; Park, Nae-Man; Lee, Sang Seok; Im, Sung Gap; Koo, Jae Bon
2016-06-22
We demonstrate a new patterning technique for gallium-based liquid metals on flat substrates, which can provide both high pattern resolution (∼20 μm) and alignment precision as required for highly integrated circuits. In a very similar manner as in the patterning of solid metal films by photolithography and lift-off processes, the liquid metal layer painted over the whole substrate area can be selectively removed by dissolving the underlying photoresist layer, leaving behind robust liquid patterns as defined by the photolithography. This quick and simple method makes it possible to integrate fine-scale interconnects with preformed devices precisely, which is indispensable for realizing monolithically integrated stretchable circuits. As a way for constructing stretchable integrated circuits, we propose a hybrid configuration composed of rigid device regions and liquid interconnects, which is constructed on a rigid substrate first but highly stretchable after being transferred onto an elastomeric substrate. This new method can be useful in various applications requiring both high-resolution and precisely aligned patterning of gallium-based liquid metals.
The payloads of Advanced Virgo: current status and upgrades
NASA Astrophysics Data System (ADS)
Naticchioni, L.; Virgo Collaboration
2018-02-01
The development and integration of new detector payloads has been an important part of the Advanced Virgo (AdV) project, the major upgrade of the Virgo interferometric detector of Gravitational Waves, aiming to increase the detector sensitivity by one order of magnitude. During the integration phase of the new AdV payloads with monolithic suspension of mirrors we experienced systematic suspension failures later identified as caused by dust contamination of the vacuum system. In order to not postpone the detector commissioning, making possible to join the LIGO O2 observation run, the Collaboration decided to proceed with the integration of the payloads relying on steel wire suspensions for all the mirrors. In this proceeding the status of the currently integrated payloads is reported, including their angular control characterization and the Q-factor measurements for test mass steel wire suspensions. The payload upgrade for the re-integration of monolithic suspensions after the O2 run is reported in the last section.
Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao
2017-12-11
Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.
Martinović, Tamara; Josić, Djuro
2017-11-01
The experiences in the production and application of polymethacrylate-based monolithic supports, since their development almost thirty years ago, are presented. The main driving force for the development of new chromatographic supports was the necessity for the isolation and separation of physiologically active biopolymers and their use for therapeutic purposes. For this sake, a development of a method for fast separation, preventing denaturation and preserving their biological activity was necessary. Development of polysaccharide-based supports, followed by the introduction of polymer-based chromatographic media, is shortly described. This development was followed by the advances in monolithic media that are now used for both large- and small-scale separation of biopolymers and nanoparticles. Finally, a short overview is given about the applications of monoliths for sample displacement chromatography, resulting in isolation of physiologically active biomolecules, such as proteins, protein complexes, and nucleic acid, as well as high-throughput sample preparation for proteomic investigations. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Monolithic catalyst beds for hydrazine reactors
NASA Technical Reports Server (NTRS)
1973-01-01
A monolithic catalyst bed for monopropellant hydrazine decomposition was evaluated. The program involved the evaluation of a new hydrazine catalyst concept wherein open-celled foamed materials are used as supports for the active catalysts. A high-surface-area material is deposited upon the open-celled foamed material and is then coated with an active metal to provide a spontaneous catalyst. Only a fraction of the amount of expensive active metal in currently available catalysts is needed to promote monolithic catalyst. Numerous parameters were evaluated during the program, and the importance of additional parameters became obvious only while the program was in progress. A demonstration firing (using a 2.2-Newton (N)(0.5-lbf) reactor) successfully accumulated 7,700 seconds of firing time and 16 ambient temperature starts without degradation. Based on the excellent results obtained throughout the program and the demonstrated life capability of the monolithic foam, it is recommended that additional studies be conducted to further exploit the advantages of this concept.
Chen, Guanyu; Yu, Yu; Zhang, Xinliang
2016-08-01
We propose and fabricate an on-chip mode division multiplexed (MDM) photonic interconnection system. Such a monolithically photonic integrated circuit (PIC) is composed of a grating coupler, two micro-ring modulators, mode multiplexer/demultiplexer, and two germanium photodetectors. The signals' generation, multiplexing, transmission, demultiplexing, and detection are successfully demonstrated on the same chip. Twenty Gb/s MDM signals are successfully processed with clear and open eye diagrams, validating the feasibility of the proposed circuit. The measured power penalties show a good performance of the MDM link. The proposed on-chip MDM system can be potentially used for large-capacity optical interconnection in future high-performance computers and big data centers.
NASA Astrophysics Data System (ADS)
Chung, Kunook; Sui, Jingyang; Demory, Brandon; Ku, Pei-Cheng
2017-07-01
Additive color mixing across the visible spectrum was demonstrated from an InGaN based light-emitting diode (LED) pixel comprising red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse-width modulation, and the degree of color control was also characterized.
NASA Astrophysics Data System (ADS)
Hung, Hing-Loi A.; Smith, Thane; Huang, Ho C.; Polak-Dingels, Penny; Webb, Kevin J.
1989-08-01
The characterization of microwave and millimeter-wave monolithic integrated circits (MIMICs) using picosecond pulse-sampling techniques is developed with emphasis on improving broadband coverage and measurement accuracy. GaAs photoconductive swithces are used for signal generation and sampling operations. The measured time-domain response allows the spectral transfer function of the MIMIC to be obtained. This measurement technique is verified by characterization of the frequency response (magnitude and phase) of a reference 50-ohm microstrip line and a two-stage Ka-band MIMIC amplifier. The measured broadband results agree with those obtained from conventional frequency-domain measurements using a network analyzer. The application of this optical technique to on-wafer MIMIC characterization is described.
On-chip III-V monolithic integration of heralded single photon sources and beamsplitters
NASA Astrophysics Data System (ADS)
Belhassen, J.; Baboux, F.; Yao, Q.; Amanti, M.; Favero, I.; Lemaître, A.; Kolthammer, W. S.; Walmsley, I. A.; Ducci, S.
2018-02-01
We demonstrate a monolithic III-V photonic circuit combining a heralded single photon source with a beamsplitter, at room temperature and telecom wavelength. Pulsed parametric down-conversion in an AlGaAs waveguide generates counterpropagating photons, one of which is used to herald the injection of its twin into the beamsplitter. We use this configuration to implement an integrated Hanbury-Brown and Twiss experiment, yielding a heralded second-order correlation gher(2 )(0 )=0.10 ±0.02 that confirms single-photon operation. The demonstrated generation and manipulation of quantum states on a single III-V semiconductor chip opens promising avenues towards real-world applications in quantum information.
NASA Technical Reports Server (NTRS)
Kim, J. H.; Katz, J.; Lin, S. H.; Psaltis, D.
1989-01-01
A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.
Development of 20 GHz monolithic transmit modules
NASA Technical Reports Server (NTRS)
Higgins, J. A.
1988-01-01
The history of the development of a transmit module for the band 17.7 to 20.2 GHz is presented. The module was to monolithically combine, on one chip, five bits of phase shift, a buffer amplifier and a power amplifier to produce 200 mW to the antenna element. The approach taken was MESFET ion implanted device technology. A common pinch-off voltage was decided upon for each application. The beginning of the total integration phases revealed hitherto unencountered hazards of large microwave circuit integration which were successfully overcome. Yield and customer considerations finally led to two separate chips, one containing the power amplifiers and the other containing the complete five bit phase shifter.
Coherent optical monolithic phased-array antenna steering system
Hietala, Vincent M.; Kravitz, Stanley H.; Vawter, Gregory A.
1994-01-01
An optical-based RF beam steering system for phased-array antennas comprising a photonic integrated circuit (PIC). The system is based on optical heterodyning employed to produce microwave phase shifting by a monolithic PIC constructed entirely of passive components. Microwave power and control signal distribution to the antenna is accomplished by optical fiber, permitting physical separation of the PIC and its control functions from the antenna. The system reduces size, weight, complexity, and cost of phased-array antenna systems.
Urban, Jiri; Svec, Frantisek; Fréchet, Jean M.J.
2011-01-01
An enzymatic reactor with lipase immobilized on a monolithic polymer support has been prepared and used to catalyze the transesterification of triacylglycerides into the fatty acid methyl esters commonly used for biodiesel. A design of experiments procedure was used to optimize the monolithic reactor with variables including control of the surface polarity of the monolith via variations in the length of the hydrocarbon chain in alkyl methacrylate monomer, time of grafting of 1-vinyl-4,4-dimethylazlactone used to activate the monolith, and time used for the immobilization of porcine lipase. Optimal conditions involved the use of a poly(stearyl methacrylate-co-ethylene dimethacrylate) monolith, grafted first with vinylazlactone, then treated with lipase for 2 h to carry out the immobilization of the enzyme. Best conditions for the transesterification of glyceryl tributyrate included a temperature of 37°C and a 10 min residence time of the substrate in the bioreactor. The reactor did not lose its activity even after pumping through it a solution of substrate equaling 1,000 reactor volumes. This enzymatic reactor was also used for the transesterification of triacylglycerides from soybean oil to fatty acid methyl esters thus demonstrating the ability of the reactor to produce biodiesel. PMID:21915852
Urban, Jiri; Svec, Frantisek; Fréchet, Jean M J
2012-02-01
An enzymatic reactor with lipase immobilized on a monolithic polymer support has been prepared and used to catalyze the transesterification of triacylglycerides into the fatty acid methyl esters commonly used for biodiesel. A design of experiments procedure was used to optimize the monolithic reactor with variables including control of the surface polarity of the monolith via variations in the length of the hydrocarbon chain in alkyl methacrylate monomer, time of grafting of 1-vinyl-4,4-dimethylazlactone used to activate the monolith, and time used for the immobilization of porcine lipase. Optimal conditions involved the use of a poly(stearyl methacrylate-co-ethylene dimethacrylate) monolith, grafted first with vinylazlactone, then treated with lipase for 2 h to carry out the immobilization of the enzyme. Best conditions for the transesterification of glyceryl tributyrate included a temperature of 37°C and a 10 min residence time of the substrate in the bioreactor. The reactor did not lose its activity even after pumping through it a solution of substrate equaling 1,000 reactor volumes. This enzymatic reactor was also used for the transesterification of triacylglycerides from soybean oil to fatty acid methyl esters thus demonstrating the ability of the reactor to produce biodiesel. Copyright © 2011 Wiley Periodicals, Inc.
High operating temperature nBn detector with monolithically integrated microlens
NASA Astrophysics Data System (ADS)
Soibel, Alexander; Keo, Sam A.; Fisher, Anita; Hill, Cory J.; Luong, Edward; Ting, David Z.; Gunapala, Sarath D.; Lubyshev, Dmitri; Qiu, Yueming; Fastenau, Joel M.; Liu, Amy W. K.
2018-01-01
We demonstrate an InAsSb nBn detector monolithically integrated with a microlens fabricated on the back side of the detector. The increase in the optical collection area of the detector resulted in a five-fold enhancement of the responsivity to Rp = 5.5 A/W. The responsivity increases further to Rp = 8.5 A/W with an antireflection coating. These 4.5 μm cut-off wavelength antireflection coated detectors with microlenses exhibited a detectivity of D* (λ) = 2.7 × 1010 cmHz0.5/W at T = 250 K, which can be reached easily with a single-stage thermoelectric cooler or with a passive radiator in the space environment. This represents a 25 K increase in the operating temperature of these devices compared to the uncoated detectors without an integrated microlens.
Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L
2016-03-09
Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links.
Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits.
Liu, Yuanda; Ang, Kah-Wee
2017-07-25
Two-dimensional (2D) inverters are a fundamental building block for flexible logic circuits which have previously been realized by heterogeneously wiring transistors with two discrete channel materials. Here, we demonstrate a monolithically integrated complementary inverter made using a homogeneous black phosphorus (BP) nanosheet on flexible substrates. The digital logic inverter circuit is demonstrated via effective threshold voltage tuning within a single BP material, which offers both electron and hole dominated conducting channels with nearly symmetric pinch-off and current saturation. Controllable electron concentration is achieved by accurately modulating the aluminum (Al) donor doping, which realizes BP n-FET with a room-temperature on/off ratio >10 3 . Simultaneously, work function engineering is employed to obtain a low Schottky barrier contact electrode that facilities hole injection, thus enhancing the current density of the BP p-FET by 9.4 times. The flexible inverter circuit shows a clear digital logic voltage inversion operation along with a larger-than-unity direct current voltage gain, while exhibits alternating current dynamic signal switching at a record high frequency up to 100 kHz and remarkable electrical stability upon mechanical bending with a radii as small as 4 mm. Our study demonstrates a practical monolithic integration strategy for achieving functional logic circuits on one material platform, paving the way for future high-density flexible electronic applications.
Chen, Yingzhuang; Wu, Minghuo; Wang, Keyi; Chen, Bo; Yao, Shouzhuo; Zou, Hanfa; Nie, Lihua
2011-11-04
A novel thiol-ene "click" strategy for the preparation of monolithic trypsin microreactor was proposed. The hybrid organic-inorganic monolithic capillary column with ene-functionality was fabricated by sol-gel process using tetramethoxysilane (TMOS) and γ-methacryloxypropyltrimethoxysilane (γ-MAPS) as precursors. The disulfide bonds of trypsin were reduced to form free thiol groups. Then the trypsin containing free thiol groups was attached on the γ-MAPS hybrid monolithic column with ene-functionality via thiol-ene click chemistry to form a trypsin microreactor. The activity of the trypsin microreactor was characterized by detecting the substrate (Nα-p-tosyl-L-arginine methyl ester hydrochloride, TAME) and the product (Nα-p-tosyl-L-arginine, TA) with on-line capillary zone electrophoresis. After investigating various synthesizing conditions, it was found that the microreactor with poly(N,N'-methylenebisacrylamide) as spacer can deliver the highest activity, yielding a rapid reaction rate. After repeatedly sampling and analyzing for 100 times, the monolithic trypsin microreactor still remained 87.5% of its initial activity. It was demonstrated that thiol-ene "click" strategy for the construction of enzyme microreactor is a promising method for the highly selective immobilization of proteins under mild conditions, especially enzymes with free thiol radicals. Copyright © 2011 Elsevier B.V. All rights reserved.
Nunes, Catherine; Sousa, Angela; Nunes, José C; Morão, António M; Sousa, Fani; Queiroz, João A
2014-06-01
The present study describes the integration of membrane technology with monolithic chromatography to obtain plasmid DNA with high quality. Isolation and clarification of plasmid DNA lysate were first conducted by a microfiltration step, by using a hydrophilic nylon microfiltration membrane, avoiding the need of centrifugation. For the total elimination of the remaining impurities, a suitable purification step is required. Monolithic stationary phases have been successfully applied as an alternative to conventional supports. Thus, the sample recovered from the membrane process was applied into a nongrafted CarbonylDiImidazole disk. Throughout the global procedure, a reduced level of impurities such as proteins and RNA was obtained, and no genomic DNA was detectable in the plasmid DNA sample. The chromatographic process demonstrated an efficient performance on supercoiled plasmid DNA purity and recovery (100 and 84.44%, respectively). Thereby, combining the membrane technology to eliminate some impurities from lysate sample with an efficient chromatographic strategy to purify the supercoiled plasmid DNA arises as a powerful approach for industrial-scale systems aiming at plasmid DNA purification. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A dual frequency microstrip antenna for Ka band
NASA Technical Reports Server (NTRS)
Lee, R. Q.; Baddour, M. F.
1985-01-01
For fixed satellite communication systems at Ka band with downlink at 17.7 to 20.2 GHz and uplink at 27.5 to 30.0 GHz, the focused optics and the unfocused optics configurations with monolithic phased array feeds have often been used to provide multiple fixed and multiple scanning spot beam coverages. It appears that a dual frequency microstrip antenna capable of transmitting and receiving simultaneously is highly desirable as an array feed element. This paper describes some early efforts on the development and experimental testing of a dual frequency annular microstrip antenna. The antenna has potential application for use in conjunction with a monolithic microwave integrated circuit device as an active radiating element in a phased array of phased array feeds. The antenna is designed to resonate at TM sub 12 and TM sub 13 modes and tuned with a circumferential microstrip ring to vary the frequency ratio. Radiation characteristics at both the high and low frequencies are examined. Experimental results including radiating patterns and swept frequency measurements are presented.
Monolithic Gallium Arsenide Superheterodyne Front End.
1982-06-01
which also provides a con - venient heat sink (not of primary importance in this application due to the low power dissipation of the monolithic...components utilized in the receiver front end). The thickness of the GaAs is then selected as a compromise between con - flicting requirements. A thick...International ERC41014.2FR 2.4 Analysis and Design for Low Noise The design of monolithic amplifiers for low noise must take into con - sideration active
He, Yanfang; Qi, Fei; Niu, Xiangheng; Zhang, Wenchi; Zhang, Xifeng; Pan, Jianming
2018-08-27
In clinical diagnosis, monitoring of uric acid (UA) is generally realized by combining uricase with natural peroxidase. The use of bio-enzymes, however, shadows some highlights of these methods due to their vulnerable activities against environments. Herein, we report a novel biosensor for the natural enzyme-free colorimetric detection of UA by using CoP nanosheet arrays grown on Ni foam (NF) as a monolithic peroxidase mimic. The integrated nanozyme can be put into and taken out from reaction systems conveniently with only tweezers, making it possible for on-demand analysis. As demonstrated, the obtained CoP/NF exhibits outstanding peroxidase-like activity to trigger the oxidation reaction of colorless 3,3'5,5'-tetramethylbenzidine (TMB) to a blue product (TMBox) mediated by H 2 O 2 . It is found that the blue TMBox can be reduced to colorless TMB again by UA selectively, thus the presence of UA in solutions will suppress the color reaction of TMB. Based on this principle, an uricase-free biosensor is developed for the photometric determination of UA, providing a wide detection range of 1-200 μM and a limit of detection down to 1.0 μM. In addition, the fabricated biosensor can be applied for measuring UA in clinical samples with merits of simple operation and good reliability, exhibiting its great promise in clinical diagnosis. Copyright © 2018 Elsevier B.V. All rights reserved.
Fault tolerance analysis and applications to microwave modules and MMIC's
NASA Astrophysics Data System (ADS)
Boggan, Garry H.
A project whose objective was to provide an overview of built-in-test (BIT) considerations applicable to microwave systems, modules, and MMICs (monolithic microwave integrated circuits) is discussed. Available analytical techniques and software for assessing system failure characteristics were researched, and the resulting investigation provides a review of two techniques which have applicability to microwave systems design. A system-level approach to fault tolerance and redundancy management is presented in its relationship to the subsystem/element design. An overview of the microwave BIT focus from the Air Force Integrated Diagnostics program is presented. The technical reports prepared by the GIMADS team were reviewed for applicability to microwave modules and components. A review of MIMIC (millimeter and microwave integrated circuit) program activities relative to BIT/BITE is given.
Active pixel sensor with intra-pixel charge transfer
NASA Technical Reports Server (NTRS)
Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)
1995-01-01
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.
Active pixel sensor with intra-pixel charge transfer
NASA Technical Reports Server (NTRS)
Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)
2003-01-01
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.
Active pixel sensor with intra-pixel charge transfer
NASA Technical Reports Server (NTRS)
Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)
2004-01-01
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.
A finite state machine read-out chip for integrated surface acoustic wave sensors
NASA Astrophysics Data System (ADS)
Rakshit, Sambarta; Iliadis, Agis A.
2015-01-01
A finite state machine based integrated sensor circuit suitable for the read-out module of a monolithically integrated SAW sensor on Si is reported. The primary sensor closed loop consists of a voltage controlled oscillator (VCO), a peak detecting comparator, a finite state machine (FSM), and a monolithically integrated SAW sensor device. The output of the system oscillates within a narrow voltage range that correlates with the SAW pass-band response. The period of oscillation is of the order of the SAW phase delay. We use timing information from the FSM to convert SAW phase delay to an on-chip 10 bit digital output operating on the principle of time to digital conversion (TDC). The control inputs of this digital conversion block are generated by a second finite state machine operating under a divided system clock. The average output varies with changes in SAW center frequency, thus tracking mass sensing events in real time. Based on measured VCO gain of 16 MHz/V our system will convert a 10 kHz SAW frequency shift to a corresponding mean voltage shift of 0.7 mV. A corresponding shift in phase delay is converted to a one or two bit shift in the TDC output code. The system can handle alternate SAW center frequencies and group delays simply by adjusting the VCO control and TDC delay control inputs. Because of frequency to voltage and phase to digital conversion, this topology does not require external frequency counter setups and is uniquely suitable for full monolithic integration of autonomous sensor systems and tags.
Optical devices integrated with semiconductor optical amplifier
NASA Astrophysics Data System (ADS)
Oh, Kwang R.; Park, Moon S.; Jeong, Jong S.; Baek, Yongsoon; Oh, Dae-Kon
2000-07-01
Semiconductor optical amplifiers (SOA's) have been used as a key optical component for the high capacity communication systems. The monolithic integration is necessary for the stable operation of these devices and the wider applications. In this paper, the coupling technique between different waveguides and the integration of SSC's are discussed and the research results of optical devices integrated with SOA's are presented.
Monolithic active pixel sensor development for the upgrade of the ALICE inner tracking system
NASA Astrophysics Data System (ADS)
Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Giubilato, P.; Hillemanns, H.; Junique, A.; Keil, M.; Kim, D.; Kim, J.; Kugathasan, T.; Lattuca, A.; Mager, M.; Marin Tobon, C. A.; Marras, D.; Martinengo, P.; Mattiazzo, S.; Mazza, G.; Mugnier, H.; Musa, L.; Pantano, D.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Siddhanta, S.; Snoeys, W.; Usai, G.; van Hoorne, J. W.; Yang, P.; Yi, J.
2013-12-01
ALICE plans an upgrade of its Inner Tracking System for 2018. The development of a monolithic active pixel sensor for this upgrade is described. The TowerJazz 180 nm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel due to the offering of a deep pwell and also to use different starting materials. The ALPIDE development is an alternative to approaches based on a rolling shutter architecture, and aims to reduce power consumption and integration time by an order of magnitude below the ALICE specifications, which would be quite beneficial in terms of material budget and background. The approach is based on an in-pixel binary front-end combined with a hit-driven architecture. Several prototypes have already been designed, submitted for fabrication and some of them tested with X-ray sources and particles in a beam. Analog power consumption has been limited by optimizing the Q/C of the sensor using Explorer chips. Promising but preliminary first results have also been obtained with a prototype ALPIDE. Radiation tolerance up to the ALICE requirements has also been verified.
Freeform diamond machining of complex monolithic metal optics for integral field systems
NASA Astrophysics Data System (ADS)
Dubbeldam, Cornelis M.; Robertson, David J.; Preuss, Werner
2004-09-01
Implementation of the optical designs of image slicing Integral Field Systems requires accurate alignment of a large number of small (and therefore difficult to manipulate) optical components. In order to facilitate the integration of these complex systems, the Astronomical Instrumentation Group (AIG) of the University of Durham, in collaboration with the Labor für Mikrozerspanung (Laboratory for Precision Machining - LFM) of the University of Bremen, have developed a technique for fabricating monolithic multi-faceted mirror arrays using freeform diamond machining. Using this technique, the inherent accuracy of the diamond machining equipment is exploited to achieve the required relative alignment accuracy of the facets, as well as an excellent optical surface quality for each individual facet. Monolithic arrays manufactured using this freeform diamond machining technique were successfully applied in the Integral Field Unit for the GEMINI Near-InfraRed Spectrograph (GNIRS IFU), which was recently installed at GEMINI South. Details of their fabrication process and optical performance are presented in this paper. In addition, the direction of current development work, conducted under the auspices of the Durham Instrumentation R&D Program supported by the UK Particle Physics and Astronomy Research Council (PPARC), will be discussed. The main emphasis of this research is to improve further the optical performance of diamond machined components, as well as to streamline the production and quality control processes with a view to making this technique suitable for multi-IFU instruments such as KMOS etc., which require series production of large quantities of optical components.
Yang, Ye; Zhang, Qian; Zhang, Ruiyang; Ran, Tao; Wan, Wenchao; Zhou, Ying
2018-01-01
Powdery photocatalysts seriously restrict their practical application due to the difficult recycle and low photocatalytic activity. In this work, a monolithic g-C 3 N 4 /melamine sponge (g-C 3 N 4 /MS) was successfully fabricated by a cost-effective ultrasonic-coating route, which is easy to achieve the uniform dispersion and firm loading of g-C 3 N 4 on MS skeleton. The monolithic g-C 3 N 4 /MS entirely inherits the porous structure of MS and results in a larger specific surface area (SSA) than its powdery counterpart. Benefit from this monolithic structure, g-C 3 N 4 /MS gains more exposed active sites, enhanced visible-light absorption and separation of photogenerated carriers, thus achieving noticeable photocatalytic activity on nitric oxide (NO) removal and CO 2 reduction. Specifically, NO removal ratio is as high as 78.6% which is 4.5 times higher than that of the powdery g-C 3 N 4 , and yield rate of CO and CH 4 attains 7.48 and 3.93 μmol g -1 h -1 . Importantly, the features of low-density, high porosity, good elasticity, and firmness, not only endow g-C 3 N 4 /MS with flexibility in various environmental applications, but also make it easy to recycle and stable for long-time application. Our work provides a feasible approach to fabricate novel monolithic photocatalysts with large-scale production and application.
Yang, Ye; Zhang, Qian; Zhang, Ruiyang; Ran, Tao; Wan, Wenchao; Zhou, Ying
2018-01-01
Powdery photocatalysts seriously restrict their practical application due to the difficult recycle and low photocatalytic activity. In this work, a monolithic g-C3N4/melamine sponge (g-C3N4/MS) was successfully fabricated by a cost-effective ultrasonic-coating route, which is easy to achieve the uniform dispersion and firm loading of g-C3N4 on MS skeleton. The monolithic g-C3N4/MS entirely inherits the porous structure of MS and results in a larger specific surface area (SSA) than its powdery counterpart. Benefit from this monolithic structure, g-C3N4/MS gains more exposed active sites, enhanced visible-light absorption and separation of photogenerated carriers, thus achieving noticeable photocatalytic activity on nitric oxide (NO) removal and CO2 reduction. Specifically, NO removal ratio is as high as 78.6% which is 4.5 times higher than that of the powdery g-C3N4, and yield rate of CO and CH4 attains 7.48 and 3.93 μmol g−1 h−1. Importantly, the features of low-density, high porosity, good elasticity, and firmness, not only endow g-C3N4/MS with flexibility in various environmental applications, but also make it easy to recycle and stable for long-time application. Our work provides a feasible approach to fabricate novel monolithic photocatalysts with large-scale production and application.
NASA Astrophysics Data System (ADS)
Zhao, Jian-Yi; Chen, Xin; Zhou, Ning; Huang, Xiao-Dong; Cao, Ming-De; Liu, Wen
2014-07-01
A 16-channel distributed-feedback (DFB) laser array with a monolithic integrated arrayed waveguide grating multiplexer for a wavelength division multiplex-passive optical network system is fabricated by using the butt-joint metal organic chemical vapor deposition technology and nanoimpirnt technology. The results show that the threshold current is about 20-30 mA at 25°C. The DFB laser side output power is about 16 mW with a 150 mA injection current. The lasing wavelength is from 1550 nm to 1575 nm covering a more than 25 nm range with 200 GHz channel space. A more than 55 dB sidemode suppression ratio is obtained.
155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators
NASA Technical Reports Server (NTRS)
Rosenbaum, Steven E.; Kormanyos, Brian K.; Jelloian, Linda M.; Matloubian, Mehran; Brown, April S.; Larson, Lawrence E.; Nguyen, Loi D.; Thompson, Mark A.; Katehi, Linda P. B.; Rebeiz, Gabriel M.
1995-01-01
We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMTs (high-electron mobility transistors). These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 micron. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.
NASA Technical Reports Server (NTRS)
Popovic, Zorana B.; Kim, Moonil; Rutledge, David B.
1988-01-01
Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequency-locking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.
Study of monolithic integrated solar blind GaN-based photodetectors
NASA Astrophysics Data System (ADS)
Wang, Ling; Zhang, Yan; Li, Xiaojuan; Xie, Jing; Wang, Jiqiang; Li, Xiangyang
2018-02-01
Monolithic integrated solar blind devices on the GaN-based epilayer, which can directly readout voltage signal, were fabricated and studied. Unlike conventional GaN-based photodiodes, the integrated devices can finish those steps: generation, accumulation of carriers and conversion of carriers to voltage. In the test process, the resetting voltage was square wave with the frequency of 15 and 110 Hz, its maximal voltage of ˜2.5 V. Under LEDs illumination, the maximum of voltage swing is about 2.5 V, and the rise time of voltage swing from 0 to 2.5 V is only about 1.6 ms. However, in dark condition, the node voltage between detector and capacitance nearly decline to zero with time when the resetting voltage was equal to zero. It is found that the leakage current in the circuit gives rise to discharge of the integrated charge. Storage mode operation can offer gain, which is advantage to detection of weak photo signal.
Martinez-Cisneros, Cynthia; da Rocha, Zaira; Seabra, Antonio; Valdés, Francisco; Alonso-Chamarro, Julián
2018-06-05
The successful integration of sample pretreatment stages, sensors, actuators and electronics in microfluidic devices enables the attainment of complete micro total analysis systems, also known as lab-on-a-chip devices. In this work, we present a novel monolithic autonomous microanalyzer that integrates microfluidics, electronics, a highly sensitive photometric detection system and a sample pretreatment stage consisting on an embedded microcolumn, all in the same device, for on-line determination of relevant environmental parameters. The microcolumn can be filled/emptied with any resin or powder substrate whenever required, paving the way for its application to several analytical processes: separation, pre-concentration or ionic-exchange. To promote its autonomous operation, avoiding issues caused by bubbles in photometric detection systems, an efficient monolithic bubble removal structure was also integrated. To demonstrate its feasibility, the microanalyzer was successfully used to determine nitrate and nitrite in continuous flow conditions, providing real time and continuous information.
X-ray imaging detectors for synchrotron and XFEL sources
Hatsui, Takaki; Graafsma, Heinz
2015-01-01
Current trends for X-ray imaging detectors based on hybrid and monolithic detector technologies are reviewed. Hybrid detectors with photon-counting pixels have proven to be very powerful tools at synchrotrons. Recent developments continue to improve their performance, especially for higher spatial resolution at higher count rates with higher frame rates. Recent developments for X-ray free-electron laser (XFEL) experiments provide high-frame-rate integrating detectors with both high sensitivity and high peak signal. Similar performance improvements are sought in monolithic detectors. The monolithic approach also offers a lower noise floor, which is required for the detection of soft X-ray photons. The link between technology development and detector performance is described briefly in the context of potential future capabilities for X-ray imaging detectors. PMID:25995846
Chen, Wei-Qiang; Obermayr, Philipp; Černigoj, Urh; Vidič, Jana; Panić-Janković, Tanta; Mitulović, Goran
2017-11-01
Classical proteomics approaches involve enzymatic hydrolysis of proteins (either separated by polyacrylamide gels or in solution) followed by peptide identification using LC-MS/MS analysis. This method requires normally more than 16 h to complete. In the case of clinical analysis, it is of the utmost importance to provide fast and reproducible analysis with minimal manual sample handling. Herein we report the method development for online protein digestion on immobilized monolithic enzymatic reactors (IMER) to accelerate protein digestion, reduce manual sample handling, and provide reproducibility to the digestion process in clinical laboratory. An integrated online digestion and separation method using monolithic immobilized enzymatic reactor was developed and applied to digestion and separation of in-vitro-fertilization media. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Monolithic integration of a MOSFET with a MEMS device
Bennett, Reid; Draper, Bruce
2003-01-01
An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.
Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications
NASA Technical Reports Server (NTRS)
Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.
1987-01-01
Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.
Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications
NASA Technical Reports Server (NTRS)
Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.
1987-01-01
Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.
Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo; Ishikawa, Hiroshi
2011-07-04
We have developed a compact all-optical gate switch with a footprint less than 1 mm2, in which an optical nonlinear waveguide using cross-phase-modulation associated with intersubband transition in InGaAs/AlGaAs/AlAsSb coupled double quantum wells and a Michelson interferometer (MI) are monolithically integrated on an InP chip. The MI configuration allows a transverse magnetic pump light direct access to an MI arm for phase modulation while passive photonic integrated circuits serve a transverse electric signal light. Full switching of the π-rad nonlinear phase shift is achieved with a pump pulse energy of 8.6 pJ at a 10-GHz repetition rate. We also demonstrate all-optical demultiplexing of a 160-Gb/s signal to a 40-Gb/s signal.
NASA Astrophysics Data System (ADS)
Jing, Guojuan; Zhang, Xuejiao; Zhang, Aiai; Li, Meng; Zeng, Shanghong; Xu, Changjin; Su, Haiquan
2018-03-01
The supports of copper slices with three-kind morphologies Cu2O layers were prepared by the hydrothermal method. The Cu2O layers are rod-like structure, three-dimensional reticular and porous morphology as well as flower-like morphology, respectively. The CeO2-CuO/Cu2O/Cu monolithic catalysts present porous and network structure or foam morphology after loading CeO2 and CuO. Cu and Ce elements are uniformly dispersed onto the support surface. It is found that the monolithic catalyst with flower-like Cu2O layer displays better low-temperature activity because of highly-dispersed CuO and high Olatt concentration. The monolithic catalysts with rod-like or reticular-morphology Cu2O layers present high-temperature activity due to larger CuO crystallite sizes and good synergistic effect at copper-ceria interfacial sites. The as-prepared CeO2-CuO/Cu2O/Cu monolithic catalysts show good performance in the CO-PROX reaction. The generation of Cu2O layers with three-kind morphologies is beneficial to the loading and dispersion of copper oxides and ceria.
Zhu, Wenjun; Jin, Jianhui; Chen, Xiao; Li, Chuang; Wang, Tonghua; Tsang, Chi-Wing; Liang, Changhai
2018-02-01
Effective utilization of coal bed methane is very significant for energy utilization and environment protection. Catalytic combustion of methane is a promising way to eliminate trace amounts of oxygen in the coal bed methane and the key to this technology is the development of high-efficiency catalysts. Herein, we report a series of Ce 1-x La x O 2-δ (x = 0-0.8) monolithic catalysts for the catalytic combustion of methane, which are prepared by citric acid method. The structural characterization shows that the substitution of La enhance the oxygen vacancy concentration and reducibility of the supports and promote the migration of the surface oxygen, as a result improve the catalytic activity of CeO 2 . M-Ce 0.8 La 0.2 O 2-δ (monolithic catalyst, Ce 0.8 La 0.2 O 2-δ coated on cordierite honeycomb) exhibits outstanding activity for methane combustion, and the temperature for 10 and 90% methane conversion are 495 and 580 °C, respectively. Additionally, Ce 0.8 La 0.2 O 2-δ monolithic catalyst presents excellent stability at high temperature. These Ce 1-x La x O 2-δ monolithic materials with a small amount of La incorporation therefore show promises as highly efficient solid solution catalysts for lean-oxygen methane combustion. Graphical abstract ᅟ.
The potential impact of MMICs on future satellite communications
NASA Technical Reports Server (NTRS)
Dunn, Vernon E.
1988-01-01
This is the Final Report representing the results of a 17-month study on the future trends and requirements of Monolithic Microwave Integrated Circuits (MMIC) for space communication applications. Specifically this report identifies potential space communication applications of MMICs, assesses the impact of MMIC on the classes of systems that were identified, determines the present status and probable 10-year growth in capability of required MMIC and competing technologies, identifies the applications most likely to benefit from further MMIC development and presents recommendations for NASA development activities to address the needs of these applications.
The potential impact of MMICs on future satellite communications: Executive summary
NASA Technical Reports Server (NTRS)
Dunn, Vernon E.
1988-01-01
This Executive Summary presents the results of a 17-month study on the future trends and requirments for Monolithic Microwave Integrated circuits (MMIC) for space communication application. Specifically this report identifies potential space communication applications of MMICs, assesses the impact of MMIC on the classes of systems that were identified, determines the present status and probable 10-year growth in capability of required MMIC and competing technologies, identifies the applications most likely to benefit from further MMIC development, and presents recommendations for NASA development activities to address the needs of these applications.
Progress in MMIC technology for satellite communications
NASA Technical Reports Server (NTRS)
Haugland, Edward J.; Leonard, Regis F.
1987-01-01
NASA's Lewis Research Center is actively involved in the development of monolithic microwave and millimeter-wave integrated circuits (MMICs). The approach of the program is to support basic research under grant or in-house, while MMIC development is done under contract, thereby facilitating the transfer of technology to users. Preliminary thrusts of the program have been the extension of technology to higher frequencies (60 GHz), degrees of complexity, and performance (power, efficiency, noise figure) by utilizing novel circuit designs, processes, and materials. A review of the progress made so far is presented.
GaAs optoelectronic neuron arrays
NASA Technical Reports Server (NTRS)
Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri
1993-01-01
A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.
Gritti, Fabrice; Guiochon, Georges
2011-08-05
The corrected heights equivalent to a theoretical plate (HETP) of three 4.6mm I.D. monolithic Onyx-C(18) columns (Onyx, Phenomenex, Torrance, CA) of different lengths (2.5, 5, and 10 cm) are reported for retained (toluene, naphthalene) and non-retained (uracil, caffeine) small molecules. The moments of the peak profiles were measured according to the accurate numerical integration method. Correction for the extra-column contributions was systematically applied. The peak parking method was used in order to measure the bulk diffusion coefficients of the sample molecules, their longitudinal diffusion terms, and the eddy diffusion term of the three monolithic columns. The experimental results demonstrate that the maximum efficiency was 60,000 plates/m for retained compounds. The column length has a large impact on the plate height of non-retained species. These observations were unambiguously explained by a large trans-column eddy diffusion term in the van Deemter HETP equation. This large trans-rod eddy diffusion term is due to the combination of a large trans-rod velocity bias (≃3%), a small radial dispersion coefficient in silica monolithic columns, and a poorly designed distribution and collection of the sample streamlets at the inlet and outlet of the monolithic rod. Improving the performance of large I.D. monolithic columns will require (1) a detailed knowledge of the actual flow distribution across and along these monolithic rod and (2) the design of appropriate inlet and outlet distributors designed to minimize the nefarious impact of the radial flow heterogeneity on band broadening. Copyright © 2011 Elsevier B.V. All rights reserved.
Gerald, II, Rex E; Ruscic, Katarina J; Sears, Devin N; Smith, Luis J; Klinger, Robert J; Rathke, Jerome W
2013-11-26
The invention relates to a unique battery having a physicochemically active membrane separator/electrolyte-electrode monolith and method of making the same. The Applicant's invented battery employs a physicochemically active membrane separator/electrolyte-electrode that acts as a separator, electrolyte, and electrode, within the same monolithic structure. The chemical composition, physical arrangement of molecules, and physical geometry of the pores play a role in the sequestration and conduction of ions. In one preferred embodiment, ions are transported via the ion-hoping mechanism where the oxygens of the Al.sub.2O.sub.3 wall are available for positive ion coordination (i.e. Li.sup.+). This active membrane-electrode composite can be adjusted to a desired level of ion conductivity by manipulating the chemical composition and structure of the pore wall to either increase or decrease ion conduction.
Gerald II, Rex E.; Ruscic, Katarina J.; Sears, Devin N.; Smith, Luis J.; Klingler, Robert J.; Rathke, Jerome W.
2012-07-24
The invention relates to a unique battery having a physicochemically active membrane separator/electrolyte-electrode monolith and method of making the same. The Applicant's invented battery employs a physicochemically active membrane separator/electrolyte-electrode that acts as a separator, electrolyte, and electrode, within the same monolithic structure. The chemical composition, physical arrangement of molecules, and physical geometry of the pores play a role in the sequestration and conduction of ions. In one preferred embodiment, ions are transported via the ion-hoping mechanism where the oxygens of the Al2O3 wall are available for positive ion coordination (i.e. Li+). This active membrane-electrode composite can be adjusted to a desired level of ion conductivity by manipulating the chemical composition and structure of the pore wall to either increase or decrease ion conduction.
Ott, Sonja; Niessner, Reinhard; Seidel, Michael
2011-08-01
Macroporous epoxy-based monolithic columns were used for immunofiltration of bacteria. The prepared monolithic polymer support is hydrophilic and has large pore sizes of 21 μm without mesopores. A surface chemistry usually applied for immobilization of antibodies on glass slides is successfully transferred to monolithic columns. Step-by-step, the surface of the epoxy-based monolith is hydrolyzed, silanized, coated with poly(ethylene glycol diamine) and activated with the homobifunctional crosslinker di(N-succinimidyl)carbonate for immobilization of antibodies on the monolithic columns. The functionalization steps are characterized to ensure the coating of each monolayer. The prepared antibody-immobilized monolithic column is optimized for immunofiltration to enrich Staphylococcus aureus as an important food contaminant. Different kinds of geometries of monolithic columns, flow rates and elution buffers are tested with the goal to get high recoveries in the shortest enrichment time as possible. An effective capture of S. aureus was achieved at a flow rate of 7.0 mL/min with low backpressures of 20.1±5.4 mbar enabling a volumetric enrichment of 1000 within 145 min. The bacteria were quantified by flow cytometry using a double-labeling approach. After immunofiltration the sensitivity was significantly increased and a detection limit of the total system of 42 S. aureus/mL was reached. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Li, Ling; Shen, Yi; Wang, Zhaomei
2017-07-01
We prepared a 3D monolith by integrating graphite nanosheet encapsulated iron nanoparticles (Fe@GNS) into graphite felt (GF) supports. The structural properties of the resulting Fe@GNS/GF monolith are characterized by x-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy and N2 adsorption-desorption isotherms. The Fe@GNS/GF monoliths are utilized as a bifunctional sorbent and catalyst for water remediation. Using Congo red and methyl violet 2B as model pollutants, the sorption and catalytic performance of the Fe@GNS/GF composite are examined. The Fe@GNS/GF monolith possesses maximum sorption capacities of 177 and 142 mg g-1 for the sorption of CR and MV-2B, respectively. It also exhibits rate constants of 0.0563 and 0.0464 min-1 for the catalytic degradation of CR and MV-2B, respectively. As a proof of concept, the Fe@GNS/GF is successfully utilized to decontaminate simulated organic waste water via a combination of sorption and catalytic degradation processes.
Bioluminescent bioreporter integrated circuit devices and methods for detecting ammonia
Simpson, Michael L [Knoxville, TN; Paulus, Michael J [Knoxville, TN; Sayler, Gary S [Blaine, TN; Applegate, Bruce M [West Lafayette, IN; Ripp, Steven A [Knoxville, TN
2007-04-24
Monolithic bioelectronic devices for the detection of ammonia includes a microorganism that metabolizes ammonia and which harbors a lux gene fused with a heterologous promoter gene stably incorporated into the chromosome of the microorganism and an Optical Application Specific Integrated Circuit (OASIC). The microorganism is generally a bacterium.
Solar cell system having alternating current output
NASA Technical Reports Server (NTRS)
Evans, J. C., Jr. (Inventor)
1980-01-01
A monolithic multijunction solar cell was modified by fabricating an integrated circuit inverter on the back of the cell to produce a device capable of generating an alternating current output. In another embodiment, integrated curcuit power conditioning electronics was incorporated in a module containing a solar cell power supply.
NASA Astrophysics Data System (ADS)
Yang, Ye; Zhang, Qian; Zhang, Ruiyang; Ran, Tao; Wan, Wenchao; Zhou, Ying
2018-05-01
Powdery photocatalysts seriously restrict their practical application due to the difficult recycle and low photocatalytic activity. In this work, a monolithic g-C3N4/melamine sponge (g-C3N4/MS) was successfully fabricated by a cost-effective ultrasonic-coating route, which is easy to achieve the uniform dispersion and firm loading of g-C3N4 on MS skeleton. The monolithic g-C3N4/MS entirely inherits the porous structure of MS and results in a larger specific surface area (SSA) than its powdery counterpart. Benefit from this monolithic structure, g-C3N4/MS gains more exposed active sites, enhanced visible-light absorption and separation of photogenerated carriers, thus achieving noticeable photocatalytic activity on nitric oxide (NO) removal, rhodamine B (RhB) degradation and CO2 reduction. Specifically, NO removal ratio is as high as 78.6% which is 4.5 times higher than that of the powdery g-C3N4, while RhB degradation rate reaches 97.88%, and yield rate of CO and CH4 attains 7.48 and 3.93 μmol g-1 h-1. Importantly, the features of low-density, high porosity, good elasticity and firmness, not only endow g-C3N4/MS with flexibility in various environmental applications, but also make it easy to recycle and stable for long-time application. Our work provides a feasible approach to fabricate novel monolithic photocatalysts with large-scale production and application.
NASA Technical Reports Server (NTRS)
Liu, Louis C. T.; Liu, Carol S.; Kessler, Joel R.; Wang, Shing-Kuo; Chang, Ching-Der
1986-01-01
Several monolithic integrated circuits have been developed to make a 30-GHz receiver. The receiver components include a low-noise amplifier (LNA), an IF amplifier, a mixer, and a phase shifter. The LNA has a 7-dB noise figure with over 17 dB of associated gain. The IF amplifier has a 13-dB gain with a 30-dB control range. The mixer has a conversion loss of 10.5 dB. The phase shifter has a 180-deg phase shift control and a minimum insertion loss of 1.6 dB.
Monolithic LED arrays, next generation smart lighting sources
NASA Astrophysics Data System (ADS)
Lagrange, Alexandre; Bono, Hubert; Templier, François
2016-03-01
LED have become the main light sources of the future as they open the path for intelligent use of light in time, intensity and color. In many usages, strong energy economy is done by adjusting these properties. The smart lighting has three dimensions, energy efficiency brought by GaN blue emitting LEDs, integration of electronics, sensors, microprocessors in the lighting system and development of new functionalities and services provided by the light. Monolithic LED arrays allow two major innovations, the spatial control of light emission and the adjustment of the electrical properties of the source.
Monolithic device for modelocking and stabilization of frequency combs.
Lee, C-C; Hayashi, Y; Silverman, K L; Feldman, A; Harvey, T; Mirin, R P; Schibli, T R
2015-12-28
We demonstrate a device that integrates a III-V semiconductor saturable absorber mirror with a graphene electro-optic modulator, which provides a monolithic solution to modelocking and noise suppression in a frequency comb. The device offers a pure loss modulation bandwidth exceeding 5 MHz and only requires a low voltage driver. This hybrid device provides not only compactness and simplicity in laser cavity design, but also small insertion loss, compared to the previous metallic-mirror-based modulators. We believe this work paves the way to portable and fieldable phase-coherent frequency combs.
Monolithic Flexure Pre-Stressed Ultrasonic Horns
NASA Technical Reports Server (NTRS)
Sherrit, Stewart (Inventor); Badescu, Mircea (Inventor); Allen, Phillip Grant (Inventor); Bao, Xiaoqi (Inventor); Bar-Cohen, Yoseph (Inventor)
2016-01-01
A monolithic ultrasonic horn where the horn, backing, and pre-stress structures are combined in a single monolithic piece is disclosed. Pre-stress is applied by external flexure structures. The provision of the external flexures has numerous advantages including the elimination of the need for a pre-stress bolt. The removal of the pre-stress bolt eliminates potential internal electric discharge points in the actuator. In addition, it reduces the chances of mechanical failure in the actuator stacks that result from the free surface in the hole of conventional ring stacks. In addition, the removal of the stress bolt and the corresponding reduction in the overall number of parts reduces the overall complexity of the resulting ultrasonic horn actuator and simplifies the ease of the design, fabrication and integration of the actuator of the present invention into other structures.
Monolithic Flexure Pre-Stressed Ultrasonic Horns
NASA Technical Reports Server (NTRS)
Bao, Xiaoqi (Inventor); Bar-Cohen, Yoseph (Inventor); Badescu, Mircea (Inventor); Allen, Phillip Grant (Inventor); Sherrit, Stewart (Inventor)
2015-01-01
A monolithic ultrasonic horn where the horn, backing, and pre-stress structures are combined in a single monolithic piece is disclosed. Pre-stress is applied by external flexure structures. The provision of the external flexures has numerous advantages including the elimination of the need for a pre-stress bolt. The removal of the pre-stress bolt eliminates potential internal electric discharge points in the actuator. In addition, it reduces the chances of mechanical failure in the actuator stacks that result from the free surface in the hole of conventional ring stacks. In addition, the removal of the stress bolt and the corresponding reduction in the overall number of parts reduces the overall complexity of the resulting ultrasonic horn actuator and simplifies the ease of the design, fabrication and integration of the actuator of the present invention into other structures.
Validation and perspectives of a femtosecond laser fabricated monolithic optical stretcher
Bellini, Nicola; Bragheri, Francesca; Cristiani, Ilaria; Guck, Jochen; Osellame, Roberto; Whyte, Graeme
2012-01-01
The combination of high power laser beams with microfluidic delivery of cells is at the heart of high-throughput, single-cell analysis and disease diagnosis with an optical stretcher. So far, the challenges arising from this combination have been addressed by externally aligning optical fibres with microfluidic glass capillaries, which has a limited potential for integration into lab-on-a-chip environments. Here we demonstrate the successful production and use of a monolithic glass chip for optical stretching of white blood cells, featuring microfluidic channels and optical waveguides directly written into bulk glass by femtosecond laser pulses. The performance of this novel chip is compared to the standard capillary configuration. The robustness, durability and potential for intricate flow patterns provided by this monolithic optical stretcher chip suggest its use for future diagnostic and biotechnological applications. PMID:23082304
Monolithic Carbide-Derived Carbon Films for Micro-Supercapacitors
NASA Astrophysics Data System (ADS)
Chmiola, John; Largeot, Celine; Taberna, Pierre-Louis; Simon, Patrice; Gogotsi, Yury
2010-04-01
Microbatteries with dimensions of tens to hundreds of micrometers that are produced by common microfabrication techniques are poised to provide integration of power sources onto electronic devices, but they still suffer from poor cycle lifetime, as well as power and temperature range of operation issues that are alleviated with the use of supercapacitors. There have been a few reports on thin-film and other micro-supercapacitors, but they are either too thin to provide sufficient energy or the technology is not scalable. By etching supercapacitor electrodes into conductive titanium carbide substrates, we demonstrate that monolithic carbon films lead to a volumetric capacity exceeding that of micro- and macroscale supercapacitors reported thus far, by a factor of 2. This study also provides the framework for integration of high-performance micro-supercapacitors onto a variety of devices.
Monolithic carbide-derived carbon films for micro-supercapacitors.
Chmiola, John; Largeot, Celine; Taberna, Pierre-Louis; Simon, Patrice; Gogotsi, Yury
2010-04-23
Microbatteries with dimensions of tens to hundreds of micrometers that are produced by common microfabrication techniques are poised to provide integration of power sources onto electronic devices, but they still suffer from poor cycle lifetime, as well as power and temperature range of operation issues that are alleviated with the use of supercapacitors. There have been a few reports on thin-film and other micro-supercapacitors, but they are either too thin to provide sufficient energy or the technology is not scalable. By etching supercapacitor electrodes into conductive titanium carbide substrates, we demonstrate that monolithic carbon films lead to a volumetric capacity exceeding that of micro- and macroscale supercapacitors reported thus far, by a factor of 2. This study also provides the framework for integration of high-performance micro-supercapacitors onto a variety of devices.
General technique for the integration of MIC/MMIC'S with waveguides
NASA Technical Reports Server (NTRS)
Geller, Bernard D. (Inventor); Zaghloul, Amir I. (Inventor)
1987-01-01
A technique for packaging and integrating of a microwave integrated circuit (MIC) or monolithic microwave integrated circuit (MMIC) with a waveguide uses a printed conductive circuit pattern on a dielectric substrate to transform impedance and mode of propagation between the MIC/MMIC and the waveguide. The virtually coplanar circuit pattern lies on an equipotential surface within the waveguide and therefore makes possible single or dual polarized mode structures.
NASA Astrophysics Data System (ADS)
Taer, Erman; Taslim, Rika
2018-02-01
The synthesis of activated carbon monolith electrode made from a biomass material using the hydrolytic pressure or the pelletization technique of pre-carbonized materials is one of standard reported methods. Several steps such as pre-carbonization, milling, chemical activation, hydraulic press, carbonization, physical activation, polishing and washing need to be accomplished in the production of electrodes by this method. This is relatively a long process that need to be simplified. In this paper we present the standard method and proceed with the introduction to several alternative methods in the synthesis of activated carbon monolith electrodes. The alternative methods were emphasized on the selection of suitable biomass materials. All of carbon electrodes prepared by different methods will be analyzed for physical and electrochemical properties. The density, degree of crystallinity, surface morphology are examples for physical study and specific capacitance was an electrochemical properties that has been analysed. This alternative method has offered a specific capacitance in the range of 10 to 171 F/g.
Study of cluster shapes in a monolithic active pixel detector
NASA Astrophysics Data System (ADS)
Maçzewski, ł.; Adamus, M.; Ciborowski, J.; Grzelak, G.; łużniak, P.; Nieżurawski, P.; Żarnecki, A. F.
2009-11-01
Beamstrahlung will constitute an important source of background in a pixel vertex detector at the future International Linear Collider. Electron and positron tracks of this origin impact the pixel planes at angles generally larger than those of secondary hadrons and the corresponding clusters are elongated. We report studies of cluster characteristics using test beam electron tracks incident at various angles on a MIMOSA-5 monolithic active pixel sensor matrix.
NASA Astrophysics Data System (ADS)
Dinetta, L. C.; Hannon, M. H.
1995-10-01
Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.
NASA Technical Reports Server (NTRS)
Dinetta, L. C.; Hannon, M. H.
1995-01-01
Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.
NASA Astrophysics Data System (ADS)
Gatica, José M.; Gómez, Diana M.; Harti, Sanae; Vidal, Hilario
2013-07-01
Texturally modified clay honeycomb monoliths were prepared for use as filters to remove pollutants from water solutions. An easy, economical, "green chemistry" activation route was employed during the preparation to enhance the adsorption capacity of the honeycombs. The method involves mixing the clay before its extrusion with a natural coal that is subsequently eliminated from the monolith by heating it under air at the lowest possible temperature (440 °C according to a thermogravimetric study). The size of the coal particles used as a template was intentionally modified by adjusting the milling process (dry or wet) and its duration (1-120 min) to modulate the porosity induced in the clay monoliths after their further burning. N2 physisorption, mercury porosimetry, granulometry and SEM were used to investigate the influence of the above preparative variables on the textural properties of the clay, significant effects being found in the macropore range. Methylene blue adsorption tests under dynamic conditions suggest that there is a correlation between pollutant removal and the macropore structure generated. FTIR spectroscopy indicates that the differences observed in cationic dye adsorption over the monoliths must be related to their different texture rather than to differences in the nature of their surface hydroxyl groups.
Toolbox for the design of LiNbO3-based passive and active integrated quantum circuits
NASA Astrophysics Data System (ADS)
Sharapova, P. R.; Luo, K. H.; Herrmann, H.; Reichelt, M.; Meier, T.; Silberhorn, C.
2017-12-01
We present and discuss perspectives of current developments on advanced quantum optical circuits monolithically integrated in the lithium niobate platform. A set of basic components comprising photon pair sources based on parametric down conversion (PDC), passive routing elements and active electro-optically controllable switches and polarisation converters are building blocks of a toolbox which is the basis for a broad range of diverse quantum circuits. We review the state-of-the-art of these components and provide models that properly describe their performance in quantum circuits. As an example for applications of these models we discuss design issues for a circuit providing on-chip two-photon interference. The circuit comprises a PDC section for photon pair generation followed by an actively controllable modified mach-Zehnder structure for observing Hong-Ou-Mandel interference. The performance of such a chip is simulated theoretically by taking even imperfections of the properties of the individual components into account.
Wang, Shao-Ting; Wang, Meng-Ya; Su, Xin; Yuan, Bi-Feng; Feng, Yu-Qi
2012-09-18
A novel SiO(2)/TiO(2) composite monolithic capillary column was prepared by sol-gel technology and successfully applied to enrich phosphopeptides as a metal oxide affinity chromatography (MOAC) material. For the monolith preparation, tetramethoxysilane (TMOS) and tetrabutoxytitanium (TBOT) were used as silica and titania source, respectively, and glycerol was introduced to attenuate the activity of titanium precursor, which provided a mild synthetic condition. The prepared monolith was characterized by energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The results revealed an approximate 1/2 molar ratio of titanium to silica as well as an atom-scale homogeneity in the framework. The scanning electron microscopy (SEM) results demonstrated an excellent anchorage between the column and the inner capillary wall, and nitrogen adsorption-desorption experiments showed a bimodal porosity with a narrow mesopore distribution around 3.6 nm. The prepared monolith was then applied for selective enrichment of phosphopeptides from the digestion mixture of phosphoproteins and bovine serum albumin (BSA) as well as human blood serum, nonfat milk, and egg white using an in-tube solid phase microextraction (SPME) system. Our results showed that SiO(2)/TiO(2) composite monolithic capillary column could efficiently enrich the phosphopeptides from complex matrixes. To the best of our knowledge, this is the first attempt for preparing the silica-metal composite monolithic capillary column, which offers the promising application of the monolith on phosphoproteomics study.
Mutual Injection Locking of Monolithically Integrated Coupled-Cavity DBR Lasers
Tauke-Pedretti, Anna; Vawter, G. Allen; Skogen, Erik J.; ...
2011-07-01
We present a photonic integrated circuit (PIC) composed of two strongly coupled distributed Bragg reflector (DBR) lasers. This PIC utilizes the dynamics of mutual injection locking to increase the relaxation resonance frequency from 3 GHz to beyond 30 GHz. Mutual injection-locking and external injection-locking operation are then compared.
Bioluminescent bioreporter integrated circuit detection methods
Simpson, Michael L.; Paulus, Michael J.; Sayler, Gary S.; Applegate, Bruce M.; Ripp, Steven A.
2005-06-14
Disclosed are monolithic bioelectronic devices comprising a bioreporter and an OASIC. These bioluminescent bioreporter integrated circuit are useful in detecting substances such as pollutants, explosives, and heavy-metals residing in inhospitable areas such as groundwater, industrial process vessels, and battlefields. Also disclosed are methods and apparatus for detection of particular analytes, including ammonia and estrogen compounds.
Self-contained sub-millimeter wave rectifying antenna integrated circuit
NASA Technical Reports Server (NTRS)
Siegel, Peter H. (Inventor)
2004-01-01
The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.
Development of large-area monolithically integrated silicon-film photovoltaic modules
NASA Astrophysics Data System (ADS)
Rand, J. A.; Cotter, J. E.; Ingram, A. E.; Ruffins, T. R.; Shreve, K. P.; Hall, R. B.; Barnett, A. M.
1993-06-01
This report describes work to develop Silicon-Film (trademark) Product 3 into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product 3 structure is a thin (less than 100 micron) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200 sq cm, 18%-efficient, monolithic array. The short-term objectives are to improve material quality and to fabricate 100 sq cm monolithically interconnected solar cell arrays. Low minority-carrier diffusion length in the silicon film and series resistance in the interconnected device structure are presently limiting device performance. Material quality is continually improving through reduced impurity contamination. Metallization schemes, such as a solder-dipped interconnection process, have been developed that will allow low-cost production processing and minimize R(sub s) effects. Test data for a nine-cell device (16 sq cm) indicated a V(sub oc) of 3.72 V. These first-reported monolithically interconnected multicrystalline silicon-on-ceramic devices show low shunt conductance (less than 0.1 mA/sq cm) due to limited conduction through the ceramic and no process-related metallization shunts.
Knob, Radim; Hanson, Robert L; Tateoka, Olivia B; Wood, Ryan L; Guerrero-Arguero, Israel; Robison, Richard A; Pitt, William G; Woolley, Adam T
2018-05-21
Fast determination of antibiotic resistance is crucial in selecting appropriate treatment for sepsis patients, but current methods based on culture are time consuming. We are developing a microfluidic platform with a monolithic column modified with oligonucleotides designed for sequence-specific capture of target DNA related to the Klebsiella pneumoniae carbapenemase (KPC) gene. We developed a novel single-step monolith fabrication method with an acrydite-modified capture oligonucleotide in the polymerization mixture, enabling fast monolith preparation in a microfluidic channel using UV photopolymerization. These prepared columns had a threefold higher capacity compared to monoliths prepared in a multistep process involving Schiff-base DNA attachment. Conditions for denaturing, capture and fluorescence labeling using hybridization probes were optimized with synthetic 90-mer oligonucleotides. These procedures were applied for extraction of a PCR amplicon from the KPC antibiotic resistance gene in bacterial lysate obtained from a blood sample spiked with E. coli. The results showed similar eluted peak areas for KPC amplicon extracted from either hybridization buffer or bacterial lysate. Selective extraction of the KPC DNA was verified by real time PCR on eluted fractions. These results show great promise for application in an integrated microfluidic diagnostic system that combines upstream blood sample preparation and downstream single-molecule counting detection. Copyright © 2018 Elsevier B.V. All rights reserved.
Amplifier arrays for CMB polarization
NASA Technical Reports Server (NTRS)
Gaier, Todd; Lawrence, Charles R.; Seiffert, Michael D.; Wells, Mary M.; Kangaslahti, Pekka; Dawson, Douglas
2003-01-01
Cryogenic low noise amplifier technology has been successfully used in the study of the cosmic microwave background (CMB). MMIC (Monolithic Millimeter wave Integrated Circuit) technology makes the mass production of coherent detection receivers feasible.
Sun, Xuefei; Kelly, Ryan T.; Tang, Keqi; Smith, Richard D.
2010-01-01
Summary Poly(dimethylsiloxane) (PDMS) is a widely used substrate for microfluidic devices, as it enables facile fabrication and has other distinctive properties. However, for applications requiring highly sensitive nanoelectrospray ionization mass spectrometry (nanoESI-MS) detection, the use of PDMS microdevices has been hindered by a large chemical background in the mass spectra that originates from the leaching of uncross-linked oligomers and other contaminants from the substrate. A more general challenge is that microfluidic devices containing monolithically integrated electrospray emitters are frequently unable to operate stably in the nanoflow regime where the best sensitivity is achieved. In this report, we extracted the contaminants from PDMS substrates using a series of solvents, eliminating the background observed when untreated PDMS microchips are used for nanoESI-MS, such that peptides at concentrations of 1 nM were readily detected. Optimization of the integrated emitter geometry enabled stable operation at flow rates as low as 10 nL/min. PMID:20617264
DOE Office of Scientific and Technical Information (OSTI.GOV)
SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.
2003-03-01
Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vitalmore » step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.« less
Arcamone, J; van den Boogaart, M A F; Serra-Graells, F; Fraxedas, J; Brugger, J; Pérez-Murano, F
2008-07-30
Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20 µm down to 200 nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of ∼2000 nanodevices per wafer by post-processing standard CMOS substrates using one single metal evaporation, pattern transfer to silicon and subsequent etch of the sacrificial layer. Resonance frequencies in the MHz range were measured in air and vacuum. As proof-of-concept towards an application as high performance sensors, CMOS integrated nano/micromechanical resonators are successfully implemented as ultra-sensitive areal mass sensors. These devices demonstrate the ability to monitor the deposition of gold layers whose average thickness is smaller than a monolayer. Their areal mass sensitivity is in the range of 10(-11) g cm(-2) Hz(-1), and their thickness resolution corresponds to approximately a thousandth of a monolayer.
Monolithically integrated mid-infrared lab-on-a-chip using plasmonics and quantum cascade structures
Schwarz, Benedikt; Reininger, Peter; Ristanić, Daniela; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried
2014-01-01
The increasing demand of rapid sensing and diagnosis in remote areas requires the development of compact and cost-effective mid-infrared sensing devices. So far, all miniaturization concepts have been demonstrated with discrete optical components. Here we present a monolithically integrated sensor based on mid-infrared absorption spectroscopy. A bi-functional quantum cascade laser/detector is used, where, by changing the applied bias, the device switches between laser and detector operation. The interaction with chemicals in a liquid is resolved via a dielectric-loaded surface plasmon polariton waveguide. The thin dielectric layer enhances the confinement and enables efficient end-fire coupling from and to the laser and detector. The unamplified detector signal shows a slope of 1.8–7 μV per p.p.m., which demonstrates the capability to reach p.p.m. accuracy over a wide range of concentrations (0–60%). Without any hybrid integration or subwavelength patterning, our approach allows a straightforward and cost-saving fabrication. PMID:24905443
NASA Astrophysics Data System (ADS)
Oliva, Jorge; Papadimitratos, Alexios; Desirena, Haggeo; De la Rosa, Elder; Zakhidov, Anvar A.
2015-11-01
Parallel tandem organic light emitting devices (OLEDs) were fabricated with transparent multiwall carbon nanotube sheets (MWCNT) and thin metal films (Al, Ag) as interlayers. In parallel monolithic tandem architecture, the MWCNT (or metallic films) interlayers are an active electrode which injects similar charges into subunits. In the case of parallel tandems with common anode (C.A.) of this study, holes are injected into top and bottom subunits from the common interlayer electrode; whereas in the configuration of common cathode (C.C.), electrons are injected into the top and bottom subunits. Both subunits of the tandem can thus be monolithically connected functionally in an active structure in which each subunit can be electrically addressed separately. Our tandem OLEDs have a polymer as emitter in the bottom subunit and a small molecule emitter in the top subunit. We also compared the performance of the parallel tandem with that of in series and the additional advantages of the parallel architecture over the in-series were: tunable chromaticity, lower voltage operation, and higher brightness. Finally, we demonstrate that processing of the MWCNT sheets as a common anode in parallel tandems is an easy and low cost process, since their integration as electrodes in OLEDs is achieved by simple dry lamination process.
A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics
Huang, Haiyun; Wang, Dejun; Xu, Yue
2015-01-01
This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW. PMID:26516864
A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.
Huang, Haiyun; Wang, Dejun; Xu, Yue
2015-10-27
This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.
Application of the monolithic solid oxide fuel cell to space power systems
NASA Astrophysics Data System (ADS)
Myles, Kevin M.; Bhattacharyya, Samit K.
1991-01-01
The monolithic solid-oxide fuel cell (MSOFC) is a promising electrochemical power generation device that is currently under development at Argonne National Laboratory. The extremely high power density of the MSOFC leads to MSOFC systems that have sufficiently high energy densities that they are excellent candidates for a number of space missions. The fuel cell can also be operated in reverse, if it can be coupled to an external power source, to regenerate the fuel and oxidant from the water product. This feature further enhances the potential mission applications of the MSOFC. In this paper, the current status of the fuel cell development is presented—the focus being on fabrication and currently achievable performance. In addition, a specific example of a space power system, featuring a liquid metal cooled fast spectrum nuclear reactor and a monolithic solid oxide fuel cell, is presented to demonstrate the features of an integrated system.
Integrated Silicon Carbide Power Electronic Block
DOE Office of Scientific and Technical Information (OSTI.GOV)
Radhakrishnan, Rahul
2017-11-07
Research involved in this project is aimed at monolithically integrating an anti-parallel diode to the SiC MOSFET switch, so as to avoid having to use an external anti-parallel diode in power circuit applications. SiC MOSFETs are replacing Si MOSFETs and IGBTs in many applications, yet the high bandgap of the body diode in SiC MOSFET and consequent need for an external anti-parallel diode increases costs and discourages circuit designers from adopting this technology. Successful demonstration and subsequent commercialization of this technology would reduce SiC MOSFET cost and additionally reduce component count as well as other costs at the power circuitmore » level. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas, demonstrated unit-processes for device fabrication in short loops and started full flow device fabrication. Key findings of the development activity were: The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome; and The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. Given sufficient time for additional development it is likely that processes could be tuned to realize the monolithically integrated SiC JBS diode and MOSFET. Sufficient funds were not available in this program to resolve processing difficulties and fabricate the devices.« less
Sistani, Masiar; Staudinger, Philipp; Greil, Johannes; Holzbauer, Martin; Detz, Hermann; Bertagnolli, Emmerich; Lugstein, Alois
2017-08-09
Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of "on"-state conductance or multivalued logic gates. So far, studying conductance quantization has been restricted to high-mobility materials at ultralow temperatures and requires sophisticated nanostructure formation techniques and precise lithography for contact formation. Utilizing a thermally induced exchange reaction between single-crystalline Ge nanowires and Al pads, we achieved monolithic Al-Ge-Al NW heterostructures with ultrasmall Ge segments contacted by self-aligned quasi one-dimensional crystalline Al leads. By integration in electrostatically modulated back-gated field-effect transistors, we demonstrate the first experimental observation of room temperature quantum ballistic transport in Ge, favorable for integration in complementary metal-oxide-semiconductor platform technology.
Heterogeneous Integration for Reduced Phase Noise and Improved Reliability of Semiconductor Lasers
NASA Astrophysics Data System (ADS)
Srinivasan, Sudharsanan
Significant savings in cost, power and space are possible in existing optical data transmission networks, sensors and metrology equipment through photonic integration. Photonic integration can be broadly classified into two categories, hybrid and monolithic integration. The former involves assembling multiple single functionality optical devices together into a single package including any optical coupling and/or electronic connections. On the other hand monolithic integration assembles many devices or optical functionalities on a single chip so that all the optical connections are on chip and require no external alignment. This provides a substantial improvement in reliability and simplifies testing. Monolithic integration has been demonstrated on both indium phosphide (InP) and silicon (Si) substrates. Integration on larger 300mm Si substrates can further bring down the cost and has been a major area of research in recent years. Furthermore, with increasing interest from industry, the hybrid silicon platform is emerging as a new technology for integrating various active and passive optical elements on a single chip. This is both in the interest of bringing down manufacturing cost through scaling along with continued improvement in performance and to produce multi-functional photonic integrated circuits (PIC). The goal of this work is twofold. First, we show four laser demonstrations that use the hybrid silicon platform to lower phase noise due to spontaneous emission, based on the following two techniques, viz. confinement factor reduction and negative optical feedback. The first two demonstrations are of mode-locked lasers and the next two are of tunable lasers. Some of the key results include; (a) 14dB white frequency noise reduction of a 20GHz radio-frequency (RF) signal from a harmonically mode-locked long cavity laser with greater than 55dB supermode noise suppression, (b) 8dB white frequency noise reduction from a colliding pulse mode-locked laser by reducing the number of quantum wells and a further 6dB noise reduction using coherent photon seeding from long on-chip coupled cavity, (c) linewidth reduction of a tunable laser down to 160kHz using negative optical feedback from coupled ring resonator mirrors, and (d) linewidth reduction of a widely tunable laser down to 50kHz using on-chip coupled cavity feedback effect. Second, we present the results of a reliability study conducted to investigate the influence of molecular wafer bonding between Si and InP on the lifetime of distributed feedback lasers, a common laser source used in optical communication. No degradation in lasing threshold or slope efficiency was observed after aging the lasers for 5000hrs at 70°C and 2500hrs at 85°C. However, among the three chosen bonding interface layer options, the devices with an interface superlattice layer showed a higher yield for lasers and lower dark current values in the on-chip monitor photodiodes after aging.
8-Meter UV/Optical Space Telescope
NASA Technical Reports Server (NTRS)
Stahl, H. Philip
2008-01-01
This slide presentation proposes using the unprecedented capability of the planned Ares V launch vehicle, to place a 8 meter monolithic space telescope at the Earth-Sun L2 point. This new capability enables a new design pardigm -- simplicity. The six to eight meter class telescope with a massive high Technical Readiness Level ground observatory class monolithic primary mirror has been determined feasible. The proposed design, structural analysis, spacecraft design and shroud integration, thermal analysis, propulsion system, guidance navigation and pointing control assumptions about the avionics, and power systems, operational lifetime, and the idea of in-space servicing are reviewed.
Monolithic Gyroidal Mesoporous Mixed Titanium–Niobium Nitrides
2015-01-01
Mesoporous transition metal nitrides are interesting materials for energy conversion and storage applications due to their conductivity and durability. We present ordered mixed titanium–niobium (8:2, 1:1) nitrides with gyroidal network structures synthesized from triblock terpolymer structure-directed mixed oxides. The materials retain both macroscopic integrity and mesoscale ordering despite heat treatment up to 600 °C, without a rigid carbon framework as a support. Furthermore, the gyroidal lattice parameters were varied by changing polymer molar mass. This synthesis strategy may prove useful in generating a variety of monolithic ordered mesoporous mixed oxides and nitrides for electrode and catalyst materials. PMID:25122534
Monte: A compact and versatile multidetector system based on monolithic telescopes
NASA Astrophysics Data System (ADS)
Amorini, F.; Bonanno, A.; Cardella, G.; di Pietro, A.; Fallica, G.; Figuera, P.; Morea, A.; Musumarra, A.; Papa, M.; Pappalardo, G.; Pinto, A.; Rizzo, F.; Tian, W.; Tudisco, S.; Valvo, G.
2005-09-01
We present the characteristics of a new multidetector based on monolithic silicon telescopes: MONTE. By using high-energy ion implantation techniques, the ΔE and residual energy stages of such telescopes have been integrated on the same silicon chip, obtaining extremely thin ΔE stages of the order of 1 μm. This allowed one to obtain a very low charge identification energy threshold and a very good β background suppression in reactions induced by radioactive ion beams. The multidetector has a modular structure and can be assembled in different geometrical configurations according to experimental needs.
NASA Astrophysics Data System (ADS)
Ackermann, Ulrich; Eschbaumer, Stephan; Bergmaier, Andreas; Egger, Werner; Sperr, Peter; Greubel, Christoph; Löwe, Benjamin; Schotanus, Paul; Dollinger, Günther
2016-07-01
To perform Four Dimensional Age Momentum Correlation measurements in the near future, where one obtains the positron lifetime in coincidence with the three dimensional momentum of the electron annihilating with the positron, we have investigated the time and position resolution of two CeBr3 scintillators (monolithic and an array of pixels) using a Photek IPD340/Q/BI/RS microchannel plate image intensifier. The microchannel plate image intensifier has an active diameter of 40 mm and a stack of two microchannel plates in chevron configuration. The monolithic CeBr3 scintillator was cylindrically shaped with a diameter of 40 mm and a height of 5 mm. The pixelated scintillator array covered the whole active area of the microchannel plate image intensifier and the shape of each pixel was 2.5·2.5·8 mm3 with a pixel pitch of 3.3 mm. For the monolithic setup the measured mean single time resolution was 330 ps (FWHM) at a gamma energy of 511 keV. No significant dependence on the position was detected. The position resolution at the center of the monolithic scintillator was about 2.5 mm (FWHM) at a gamma energy of 662 keV. The single time resolution of the pixelated crystal setup reached 320 ps (FWHM) in the region of the center of the active area of the microchannel plate image intensifier. The position resolution was limited by the cross-section of the pixels. The gamma energy for the pixel setup measurements was 511 keV.
Pierri, Giuseppe; Kotoni, Dorina; Simone, Patrizia; Villani, Claudio; Pepe, Giacomo; Campiglia, Pietro; Dugo, Paola; Gasparrini, Francesco
2013-10-25
Casein proteins constitute approximately 80% of the proteins present in bovine milk and account for many of its nutritional and technological properties. The analysis of the casein fraction in commercially available pasteurized milk and the study of its time-dependent degradation is of considerable interest in the agro-food industry. Here we present new analytical methods for the study of caseins in fresh and expired bovine milk, based on the use of lab-made capillary organic monolithic columns. An integrated capillary high performance liquid chromatography and high-resolution mass spectrometry (Cap-LC-HRMS) approach was developed, exploiting the excellent resolution, permeability and biocompatibility of organic monoliths, which is easily adaptable to the analysis of intact proteins. The resolution obtained on the lab-made Protein-Cap-RP-Lauryl-γ-Monolithic column (270 mm × 0.250 mm length × internal diameter, L × I.D.) in the analysis of commercial standard caseins (αS-CN, β-CN and κ-CN) through Cap-HPLC-UV was compared to the one observe using two packed capillary C4 columns, the ACE C4 (3 μm, 150 mm × 0.300 mm, L × I.D.) and the Jupiter C4 column (5 μm, 150 mm × 0.300 mm, L × I.D.). Thanks to the higher resolution observed, the monolithic capillary column was chosen for the successive degradation studies of casein fractions extracted from bovine milk 1-4 weeks after expiry date. The comparison of the UV chromatographic profiles of skim, semi-skim and whole milk showed a major stability of whole milk towards time-dependent degradation of caseins, which was further sustained by high-resolution analysis on a 50-cm long monolithic column using a 120-min time gradient. Contemporarily, the exact monoisotopic and average molecular masses of intact αS-CN and β-CN protein standards were obtained through high resolution mass spectrometry and used for casein identification in Cap-LC-HRMS analysis. Finally, the proteolytic degradation of β-CN in skim milk and the contemporary formation of low-molecular-weight proteose-peptones (PP) with exact monoisotopic Mr between 9444.0989 Da and 14098.9861 Da was confirmed through the deconvolution of high resolution mass spectra and literature data. Copyright © 2013 Elsevier B.V. All rights reserved.
Feasibility evaluation of the monolithic braided ablative nozzle
NASA Astrophysics Data System (ADS)
Director, Mark N.; McPherson, Douglass J., Sr.
1992-02-01
The feasibility of the monolithic braided ablative nozzle was evaluated as part of an independent research and development (IR&D) program complementary to the National Aeronautics and Space Administration/Marshall Space Flight Center (NASA/MSFC) Low-Cost, High-Reliability Case, Insulation and Nozzle for Large Solid Rocket Motors (LOCCIN) Program. The monolithic braided ablative nozzle is a new concept that utilizes a continuous, ablative, monolithic flame surface that extends from the nozzle entrance, through the throat, to the exit plane. The flame surface is fabricated using a Through-the-Thickness braided carbon-fiber preform, which is impregnated with a phenolic or phenolic-like resin. During operation, the braided-carbon fiber/resin material ablates, leaving the structural backside at temperatures which are sufficiently low to preclude the need for any additional insulative materials. The monolithic braided nozzle derives its potential for low life cycle cost through the use of automated processing, one-component fabrication, low material scrap, low process scrap, inexpensive raw materials, and simplified case attachment. It also has the potential for high reliability because its construction prevents delamination, has no nozzle bondlines or leak paths along the flame surface, is amenable to simplified analysis, and is readily inspectable. In addition, the braided construction has inherent toughness and is damage-tolerant. Two static-firing tests were conducted using subscale, 1.8 - 2.0-inch throat diameter, hardware. Tests were approximately 15 seconds in duration, using a conventional 18 percent aluminum/ammonium perchlorate propellant. The first of these tests evaluated the braided ablative as an integral backside insulator and exit cone; the second test evaluated the monolithic braided ablative as an integral entrance/throat/exit cone nozzle. Both tests met their objectives. Radial ablation rates at the throat were as predicted, approximately 0.017 in/sec; these rates are comparable to those for tapewrapped carbon phenolic materials. The maximum temperature rise on the outside surface occurred one inch from the nozzle exit plane and was less than 50 F at the end of the test. Further development for this concept is scheduled as part of phase 2 on the NASA/MSFC LOCCIN Program. During this effort, the nozzle materials, architecture, and processing will be optimized and tested in nozzles with 3- and 10-inch diameter throats. Further, a design and manufacturing plan for a full-scale, 20-inch-diameter throat, nozzle will be developed.
GaAs Optoelectronic Integrated-Circuit Neurons
NASA Technical Reports Server (NTRS)
Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri
1992-01-01
Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.
Watt-Level Continuous-Wave Emission from a Bi-Functional Quantum Cascade Laser/Detector
2017-04-18
facet continuous wave emission at 15◦C. Apart from the general performance benets, this enables sensing techiques which rely on continuous wave...record achieved with strained material at this wavelength. Keywords quantum cascade laser, quantum cascade detector, lab- on -a-chip, monolithic integrated...materials, which makes their integration on Si particularly dicult. Heterogeneous integration using transfer techniques allows both single device and wafer
Synthesis of monolithic graphene – graphite integrated electronics
Park, Jang-Ung; Nam, SungWoo; Lee, Mi-Sun; Lieber, Charles M.
2013-01-01
Encoding electronic functionality into nanoscale elements during chemical synthesis has been extensively explored over the past decade as the key to developing integrated nanosystems1 with functions defined by synthesis2-6. Graphene7-12 has been recently explored as a two-dimensional nanoscale material, and has demonstrated simple device functions based on conventional top-down fabrication13-20. However, the synthetic approach to encoding electronic functionality and thus enabling an entire integrated graphene electronics in a chemical synthesis had not previously been demonstrated. Here we report an unconventional approach for the synthesis of monolithically-integrated electronic devices based on graphene and graphite. Spatial patterning of heterogeneous catalyst metals permits the selective growth of graphene and graphite, with controlled number of graphene layers. Graphene transistor arrays with graphitic electrodes and interconnects were formed from synthesis. These functional, all-carbon structures were transferrable onto a variety of substrates. The integrated transistor arrays were used to demonstrate real-time, multiplexed chemical sensing, and more significantly, multiple carbon layers of the graphene-graphite device components were vertically assembled to form a three-dimensional flexible structure which served as a top-gate transistor array. These results represent a substantial progress towards encoding electronic functionality via chemical synthesis and suggest future promise for one-step integration of graphene-graphite based electronics. PMID:22101813
Synthesis of monolithic graphene-graphite integrated electronics.
Park, Jang-Ung; Nam, SungWoo; Lee, Mi-Sun; Lieber, Charles M
2011-11-20
Encoding electronic functionality into nanoscale elements during chemical synthesis has been extensively explored over the past decade as the key to developing integrated nanosystems with functions defined by synthesis. Graphene has been recently explored as a two-dimensional nanoscale material, and has demonstrated simple device functions based on conventional top-down fabrication. However, the synthetic approach to encoding electronic functionality and thus enabling an entire integrated graphene electronics in a chemical synthesis had not previously been demonstrated. Here we report an unconventional approach for the synthesis of monolithically integrated electronic devices based on graphene and graphite. Spatial patterning of heterogeneous metal catalysts permits the selective growth of graphene and graphite, with a controlled number of graphene layers. Graphene transistor arrays with graphitic electrodes and interconnects were formed from the synthesis. These functional, all-carbon structures were transferable onto a variety of substrates. The integrated transistor arrays were used to demonstrate real-time, multiplexed chemical sensing and more significantly, multiple carbon layers of the graphene-graphite device components were vertically assembled to form a three-dimensional flexible structure which served as a top-gate transistor array. These results represent substantial progress towards encoding electronic functionality through chemical synthesis and suggest the future promise of one-step integration of graphene-graphite based electronics.
Device-level and module-level three-dimensional integrated circuits created using oblique processing
NASA Astrophysics Data System (ADS)
Burckel, D. Bruce
2016-07-01
This paper demonstrates that another class of three-dimensional integrated circuits (3-D-ICs) exists, distinct from through-silicon-via-centric and monolithic 3-D-ICs. Furthermore, it is possible to create devices that are 3-D "at the device level" (i.e., with active channels oriented in each of the three coordinate axes), by performing standard CMOS fabrication operations at an angle with respect to the wafer surface into high aspect ratio silicon substrates using membrane projection lithography (MPL). MPL requires only minimal fixturing changes to standard CMOS equipment, and no change to current state-of-the-art lithography. Eliminating the constraint of two-dimensional planar device architecture enables a wide range of interconnect topologies which could help reduce interconnect resistance/capacitance, and potentially improve performance.
Bioluminescent bioreporter integrated circuit
Simpson, Michael L.; Sayler, Gary S.; Paulus, Michael J.
2000-01-01
Disclosed are monolithic bioelectronic devices comprising a bioreporter and an OASIC. These bioluminescent bioreporter integrated circuit are useful in detecting substances such as pollutants, explosives, and heavy-metals residing in inhospitable areas such as groundwater, industrial process vessels, and battlefields. Also disclosed are methods and apparatus for environmental pollutant detection, oil exploration, drug discovery, industrial process control, and hazardous chemical monitoring.
Polymer enabled 100 Gbaud connectivity for datacom applications
NASA Astrophysics Data System (ADS)
Katopodis, V.; Groumas, P.; Zhang, Z.; Dinu, R.; Miller, E.; Konczykowska, A.; Dupuy, J.-Y.; Beretta, A.; Dede, A.; Choi, J. H.; Harati, P.; Jorge, F.; Nodjiadjim, V.; Riet, Muriel; Cangini, G.; Vannucci, A.; Keil, N.; Bach, H.-G.; Grote, N.; Avramopoulos, H.; Kouloumentas, Ch.
2016-03-01
Polymers hold the promise for ultra-fast modulation of optical signals due to their potential for ultra-fast electro-optic (EO) response and high EO coefficient. In this work, we present the basic structure and properties of an efficient EO material system, and we summarize the efforts made within the project ICT-POLYSYS for the development of high-speed transmitters based on this system. More specifically, we describe successful efforts for the monolithic integration of multi-mode interference (MMI) couplers and Bragg-gratings (BGs) along with Mach-Zehnder modulators (MZMs) on this platform, and for the hybrid integration of InP active elements in the form of laser diodes (LDs) and gain chips (GCs). Using these integration techniques and the combination of the hybrid optical chips with ultra-fast indium phosphide double heterojunction bipolar transistor (InP-DHBT) electronics, we develop and fully package a single 100 Gb/s transmitter and a 2×100 Gb/s transmitter that can support serial operation at this rate with conventional non-return-to-zero on-off-keying (NRZ-OOK) modulation format. We also present the experimental evaluation of the devices, validating the efficiency of the monolithic and hybrid integration concepts and confirming the potential of this technology for single-lane 100 Gb/s optical connectivity in data-center network environments. Results from transmission experiments to this end include the achievement of BER close to 6·10-9 in B2B configuration, the achievement of BER lower than 10-7 for propagation over standard single-mode fiber (SSMF) with total length up to 1000 m, and the achievement of BER at the level of 10-5 after 1625 m of SSMF. Finally, plans for the use of the EO polymer system in a more complex hybrid integration platform for high-flexibility/high-capacity transmitters are also outlined.
Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications
NASA Astrophysics Data System (ADS)
Al-Kabi, Sattar H. Sweilim
Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid-infrared laser sources for integrated photonics.
O'Connor, Paul
1998-08-11
A monolithic amplifier includes a stable, high resistance feedback circuit and a dynamic bias circuit. The dynamic bias circuit is formed with active elements matched to those in the amplifier and feedback circuit to compensate for variations in the operating and threshold voltages thereby maintaining a stable resistance in the feedback circuit.
Conceiving semi-active control devices for large-size monolithic monuments
NASA Astrophysics Data System (ADS)
Casciati, Fabio; El Attar, Adel; Casciati, Sara
2001-07-01
CHIME is a research project, funded by the European Union, which investigates the adoption of innovative structural control techniques in view of the seismic rehabilitation of the wide monumental cultural heritage in Mediterranean countries as Egypt, Tunisia and Cyprus. The structural control devices are mainly of the semi-active type. In this particular paper one reports the first results achieved within a case study. It considers an Egyptian large size monolithic monument. Alternative solutions for its seismic rehabilitation are eventually conceived and discussed.
Multiplexed electrokinetic sample fractionation, preconcentration and elution for proteomics.
Hua, Yujuan; Jemere, Abebaw B; Dragoljic, Jelena; Harrison, D Jed
2013-07-07
Both 6 and 8-channel integrated microfluidic sample pretreatment devices capable of performing "in space" sample fractionation, collection, preconcentration and elution of captured analytes via sheath flow assisted electrokinetic pumping are described. Coatings and monolithic polymer beds were developed for the glass devices to provide cationic surface charge and anodal electroosmotic flow for delivery to an electrospray emitter tip. A mixed cationic ([2-(methacryloyloxy)ethyl] trimethylammonium chloride) (META) and hydrophobic butyl methacrylate-based monolithic porous polymer, photopolymerized in the 6- or 8-fractionation channels, was used to capture and preconcentrate samples. A 0.45 wt% META loaded bed generated comparable anodic electroosmotic flow to the cationic polymer PolyE-323 coated channel segments in the device. The balanced electroosmotic flow allowed stable electrokinetic sheath flow to prevent cross contamination of separated protein fractions, while reducing protein/peptide adsorption on the channel walls. Sequential elution of analytes trapped in the SPE beds revealed that the monolithic columns could be efficiently used to provide sheath flow during elution of analytes, as demonstrated for neutral carboxy SNARF (residual signal, 0.08% RSD, n = 40) and charged fluorescein (residual signal, 2.5% n = 40). Elution from monolithic columns showed reproducible performance with peak area reproducibility of ~8% (n = 6 columns) in a single sequential elution and the run-to-run reproducibility was 2.4-6.7% RSD (n = 4) for elution from the same bed. The demonstrated ability of this device design and operation to elute from multiple fractionation beds into a single exit channel for sample analysis by fluorescence or electrospray mass spectrometry is a crucial component of an integrated fractionation and assay system for proteomics.
Low cost high efficiency GaAs monolithic RF module for SARSAT distress beacons
NASA Technical Reports Server (NTRS)
Petersen, W. C.; Siu, D. P.; Cook, H. F.
1991-01-01
Low cost high performance (5 Watts output) 406 MHz beacons are urgently needed to realize the maximum utilization of the Search and Rescue Satellite-Aided Tracking (SARSAT) system spearheaded in the U.S. by NASA. Although current technology can produce beacons meeting the output power requirement, power consumption is high due to the low efficiency of available transmitters. Field performance is currently unsatisfactory due to the lack of safe and reliable high density batteries capable of operation at -40 C. Low cost production is also a crucial but elusive requirement for the ultimate wide scale utilization of this system. Microwave Monolithics Incorporated (MMInc.) has proposed to make both the technical and cost goals for the SARSAT beacon attainable by developing a monolithic GaAs chip set for the RF module. This chip set consists of a high efficiency power amplifier and a bi-phase modulator. In addition to implementing the RF module in Monolithic Microwave Integrated Circuit (MMIC) form to minimize ultimate production costs, the power amplifier has a power-added efficiency nearly twice that attained with current commercial technology. A distress beacon built using this RF module chip set will be significantly smaller in size and lighter in weight due to a smaller battery requirement, since the 406 MHz signal source and the digital controller have far lower power consumption compared to the 5 watt power amplifier. All the program tasks have been successfully completed. The GaAs MMIC RF module chip set has been designed to be compatible with the present 406 MHz signal source and digital controller. A complete high performance low cost SARSAT beacon can be realized with only additional minor iteration and systems integration.
Development of radiation tolerant monolithic active pixel sensors with fast column parallel read-out
NASA Astrophysics Data System (ADS)
Koziel, M.; Dorokhov, A.; Fontaine, J.-C.; De Masi, R.; Winter, M.
2010-12-01
Monolithic active pixel sensors (MAPS) [1] (Turchetta et al., 2001) are being developed at IPHC—Strasbourg to equip the EUDET telescope [2] (Haas, 2006) and vertex detectors for future high energy physics experiments, including the STAR upgrade at RHIC [3] (T.S. Collaboration, 2005) and the CBM experiment at FAIR/GSI [4] (Heuser, 2006). High granularity, low material budget and high read-out speed are systematically required for most applications, complemented, for some of them, with high radiation tolerance. A specific column-parallel architecture, implemented in the MIMOSA-22 sensor, was developed to achieve fast read-out MAPS. Previous studies of the front-end architecture integrated in this sensor, which includes in-pixel amplification, have shown that the fixed pattern noise increase consecutive to ionizing radiation can be controlled by means of a negative feedback [5] (Hu-Guo et al., 2008). However, an unexpected rise of the temporal noise was observed. A second version of this chip (MIMOSA-22bis) was produced in order to search for possible improvements of the radiation tolerance, regarding this type of noise. In this prototype, the feedback transistor was tuned in order to mitigate the sensitivity of the pixel to ionizing radiation. The performances of the pixels after irradiation were investigated for two types of feedback transistors: enclosed layout transistor (ELT) [6] (Snoeys et al., 2000) and "standard" transistor with either large or small transconductance. The noise performance of all test structures was studied in various conditions (expected in future experiments) regarding temperature, integration time and ionizing radiation dose. Test results are presented in this paper. Based on these observations, ideas for further improvement of the radiation tolerance of column parallel MAPS are derived.
W-band InP based HEMT MMIC low noise amplifiers
NASA Technical Reports Server (NTRS)
Lin, K. Y.; Tang, Y. L.; Wang, H.; Gaier, T.; Gough, R. G.; Sinclair, M.
2002-01-01
This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.
NASA Astrophysics Data System (ADS)
McCulloch, Mark A.; Melhuish, Simon J.; Piccirillo, Lucio
2015-01-01
An approach to enhancing the noise performance of an InP monolithic microwave integrated circuit (MMIC)-based low noise amplifiers (LNA) through the use of a discrete 100-nm gate length InP high electron mobility transistor is outlined. This LNA, known as a transistor in front of MMIC (T + MMIC) LNA, possesses a gain in excess of 40 dB and an average noise temperature of 9.4 K across the band 27 to 33 GHz at a physical temperature of 8 K. This compares favorably with 14.5 K for an LNA containing an equivalent MMIC. A simple advanced design system model offering further insights into the operation of the LNA is also presented and the LNA is compared with the current state-of-the-art Planck LFI LNAs.
Monolithic barrier-all-around high electron mobility transistor with planar GaAs nanowire channel.
Miao, Xin; Zhang, Chen; Li, Xiuling
2013-06-12
High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and temperature as the size of the NWs scales down. Using a growth mode modulation scheme for the NW and thin film barrier layers, monolithically integrated AlGaAs barrier-all-around planar GaAs NW high electron mobility transistors (NW-HEMTs) are achieved. The peak extrinsic transconductance, drive current, and effective electron velocity are 550 μS/μm, 435 μA/μm, and ~2.9 × 10(7) cm/s, respectively, at 2 V supply voltage with a gate length of 120 nm. The excellent DC performance demonstrated here shows the potential of this bottom-up planar NW technology for low-power high-speed very-large-scale-integration (VLSI) circuits.
Monolithically compatible impedance measurement
Ericson, Milton Nance; Holcomb, David Eugene
2002-01-01
A monolithic sensor includes a reference channel and at least one sensing channel. Each sensing channel has an oscillator and a counter driven by the oscillator. The reference channel and the at least one sensing channel being formed integrally with a substrate and intimately nested with one another on the substrate. Thus, the oscillator and the counter have matched component values and temperature coefficients. A frequency determining component of the sensing oscillator is formed integrally with the substrate and has an impedance parameter which varies with an environmental parameter to be measured by the sensor. A gating control is responsive to an output signal generated by the reference channel, for terminating counting in the at least one sensing channel at an output count, whereby the output count is indicative of the environmental parameter, and successive ones of the output counts are indicative of changes in the environmental parameter.
Millimeter-wave technology advances since 1985 and future trends
NASA Astrophysics Data System (ADS)
Meinel, Holger H.
1991-05-01
The author focuses on finline or E-plane technology. Several examples, including AVES, a 61.5-GHz radar sensor for traffic data acquisition, are included. Monolithic integrated 60- and 94-GHz receiver circuits composed of a mixer and IF amplifier in compatible FET technology on GaAs are presented to show the state of the art in this area. A promising approach to the use of silicon technology for monolithic millimeter-wave integrated circuits, called SIMMWIC, is described as well. As millimeter-wave technology has matured, increased interest has been generated for very specific applications: (1) commercial automotive applications such as intelligent cruise control and enhanced vision have attracted great interest, calling for a low-cost design approach; and (2) an almost classical application of millimeter-wave techniques is the field of radar seekers, e.g., for intelligent ammunitions, calling for high performance under extreme environmental conditions. Two examples fulfilling these requirements are described.
NASA Astrophysics Data System (ADS)
Pani, R.; Gonzalez, A. J.; Bettiol, M.; Fabbri, A.; Cinti, M. N.; Preziosi, E.; Borrazzo, C.; Conde, P.; Pellegrini, R.; Di Castro, E.; Majewski, S.
2015-06-01
The proposal of Mindview European Project concerns with the development of a very high resolution and high efficiency brain dedicated PET scanner simultaneously working with a Magnetic Resonance scanner, that expects to visualize neurotransmitter pathways and their disruptions in the quest to better diagnose schizophrenia. On behalf of this project, we propose a low cost PET module for the first prototype, based on monolithic crystals, suitable to be integrated with a head Radio Frequency (RF) coil. The aim of the suggested module is to achieve high performances in terms of efficiency, planar spatial resolution (expected about 1 mm) and discrimination of gamma Depth Of Interaction (DOI) in order to reduce the parallax error. Our preliminary results are very promising: a DOI resolution of about 3 mm, a spatial resolution ranging from about 1 to 1.5 mm and a good position linearity.
Monolithic microwave integrated circuit water vapor radiometer
NASA Technical Reports Server (NTRS)
Sukamto, L. M.; Cooley, T. W.; Janssen, M. A.; Parks, G. S.
1991-01-01
A proof of concept Monolithic Microwave Integrated Circuit (MMIC) Water Vapor Radiometer (WVR) is under development at the Jet Propulsion Laboratory (JPL). WVR's are used to remotely sense water vapor and cloud liquid water in the atmosphere and are valuable for meteorological applications as well as for determination of signal path delays due to water vapor in the atmosphere. The high cost and large size of existing WVR instruments motivate the development of miniature MMIC WVR's, which have great potential for low cost mass production. The miniaturization of WVR components allows large scale deployment of WVR's for Earth environment and meteorological applications. Small WVR's can also result in improved thermal stability, resulting in improved calibration stability. Described here is the design and fabrication of a 31.4 GHz MMIC radiometer as one channel of a thermally stable WVR as a means of assessing MMIC technology feasibility.
Psarouli, A; Salapatas, A; Botsialas, A; Petrou, P S; Raptis, I; Makarona, E; Jobst, G; Tukkiniemi, K; Sopanen, M; Stoffer, R; Kakabakos, S E; Misiakos, K
2015-12-02
Protein detection and characterization based on Broad-band Mach-Zehnder Interferometry is analytically outlined and demonstrated through a monolithic silicon microphotonic transducer. Arrays of silicon light emitting diodes and monomodal silicon nitride waveguides forming Mach-Zehnder interferometers were integrated on a silicon chip. Broad-band light enters the interferometers and exits sinusoidally modulated with two distinct spectral frequencies characteristic of the two polarizations. Deconvolution in the Fourier transform domain makes possible the separation of the two polarizations and the simultaneous monitoring of the TE and the TM signals. The dual polarization analysis over a broad spectral band makes possible the refractive index calculation of the binding adlayers as well as the distinction of effective medium changes into cover medium or adlayer ones. At the same time, multi-analyte detection at concentrations in the pM range is demonstrated.
Duplančić, Marina; Tomašić, Vesna; Gomzi, Zoran
2017-07-05
This paper is focused on development of the metal monolithic structure for total oxidation of toluene at low temperature. The well-adhered catalyst, based on the mixed oxides of manganese and nickel, is washcoated on the Al/Al 2 O 3 plates as metallic support. For the comparison purposes, results observed for the manganese-nickel mixed oxide supported on the metallic monolith are compared with those obtained using powder type of the same catalyst. Prepared manganese-nickel mixed oxides in both configurations show remarkable low-temperature activity for the toluene oxidation. The reaction temperature T 50 corresponding to 50% of the toluene conversion is observed at temperatures of ca. 400-430 K for the powder catalyst and at ca. 450-490 K for the monolith configuration. The appropriate mathematical models, such as one-dimensional (1D) pseudo-homogeneous model of the fixed bed reactor and the 1D heterogeneous model of the metal monolith reactor, are applied to describe and compare catalytic performances of both reactors. Validation of the applied models is performed by comparing experimental data with theoretical predictions. The obtained results confirmed that the reaction over the monolithic structure is kinetically controlled, while in the case of the powder catalyst the reaction rate is influenced by the intraphase diffusion.
Ren, Zheng; Guo, Yanbing; Gao, Pu-Xian
2015-03-20
Monolithic catalysts, also known as structured catalysts, represent an important catalyst configuration widely used in automotive, chemical, and energy industries. However, several issues associated with washcoat based monolithic catalyst preparation are ever present, such as compromised materials utilization efficiency due to a less-than-ideal wash coating process, difficulty in precise and optimum microstructure control and lack of structure-property correlation. Here, in this mini-review, we introduce the concept of nano-array catalyst, a new type of monolithic catalyst featuring high catalyst utilization efficiency, good thermal/mechanical robustness, and catalytic performance tunability. A comprehensive overview is presented with detailed discussion of the strategies for nano-arraymore » catalyst preparation and rational catalytic activity adjustment enabled by the well-defined nano-array geometry. Specifically their scalable fabrication processes are reviewed in conjunction with discussion of their various catalytic oxidation reaction performances at low temperature. Finally, we hope this review will serve as a timely and useful research guide for rational design and utilization of the new type of monolithic catalysts.« less
NASA Astrophysics Data System (ADS)
Tian, Ye; Zetterling, Carl-Mikael
2017-09-01
This paper presents a comprehensive investigation of the frequency response of a monolithic OpAmp-RC integrator implemented in a 4H-SiC bipolar IC technology. The circuits and devices have been measured and characterized from 27 to 500 °C. The devices have been modelled to identify that the substrate capacitance is a dominant factor affecting the OpAmp's high-frequency response. Large Miller compensation capacitors of more than 540 pF are required to ensure stability of the internal OpAmp. The measured unit-gain-bandwidth product of the OpAmp is ∼1.1 MHz at 27 °C, and decreases to ∼0.5 MHz at 500 °C mainly due to the reduction of the transistor's current gain. On the other hand, it is not necessary to compensate the integrator in a relatively wide bandwidth ∼0.7 MHz over the investigated temperature range. At higher frequencies, the integrator's frequency response has been identified to be significantly affected by that of the OpAmp and load impedance. This work demonstrates the potential of this technology for high temperature applications requiring bandwidths of several megahertz.
Kuo, Yu-Zheng; Wu, Jui-Pin; Wu, Tsu-Hsiu; Chiu, Yi-Jen
2012-10-22
We proposed and demonstrated a novel scheme of photonic ultra-wide-band (UWB) doublet pulse based on monolithic integration of tapered optical-direction coupler (TODC) and multiple-quantum-well (MQW) waveguide. TODC is formed by a top tapered MQW waveguide vertically integrating with an underneath passive waveguide. Through simultaneous field-driven optical index- and absorption- change in MQW, the partial optical coupling in TODC can be used to get a valley-shaped of optical transmission against voltage. Therefore, doublet-enveloped optical pulse can be realized by high-speed and high-efficient conversion of input electrical pulse. By just adjusting bias through MQW, 1530 nm photonic UWB doublet optical pulse with 75-ps pulse width, below -41.3 dBm power, 125% fractional bandwidth, and 7.5 GHz of -10 dB bandwidth has been demonstrated, fitted into FCC requirement (3.1 GHz~10.6 GHz). Doublet-pulse data transmission generated in optical fiber is also performed for further characterization, exhibiting a successful 1.25 Gb/s error-free transmission. It suggests such optoelectronic integration template can be applied for photonic UWB generation in fiber-based communications.
3D hybrid integrated lasers for silicon photonics
NASA Astrophysics Data System (ADS)
Song, B.; Pinna, S.; Liu, Y.; Megalini, L.; Klamkin, J.
2018-02-01
A novel 3D hybrid integration platform combines group III-V materials and silicon photonics to yield high-performance lasers is presented. This platform is based on flip-chip bonding and vertical optical coupling integration. In this work, indium phosphide (InP) devices with monolithic vertical total internal reflection turning mirrors were bonded to active silicon photonic circuits containing vertical grating couplers. Greater than 2 mW of optical power was coupled into a silicon waveguide from an InP laser. The InP devices can also be bonded directly to the silicon substrate, providing an efficient path for heat dissipation owing to the higher thermal conductance of silicon compared to InP. Lasers realized with this technique demonstrated a thermal impedance as low as 6.2°C/W, allowing for high efficiency and operation at high temperature. InP reflective semiconductor optical amplifiers were also integrated with 3D hybrid integration to form integrated external cavity lasers. These lasers demonstrated a wavelength tuning range of 30 nm, relative intensity noise lower than -135 dB/Hz and laser linewidth of 1.5 MHz. This platform is promising for integration of InP lasers and photonic integrated circuits on silicon photonics.
NASA Astrophysics Data System (ADS)
Yang, P.; Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Gao, C.; Hillemanns, H.; Junique, A.; Kofarago, M.; Keil, M.; Kugathasan, T.; Kim, D.; Kim, J.; Lattuca, A.; Marin Tobon, C. A.; Marras, D.; Mager, M.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Siddhanta, S.; Usai, G.; van Hoorne, J. W.; Yi, J.
2015-06-01
Active Pixel Sensors used in High Energy Particle Physics require low power consumption to reduce the detector material budget, low integration time to reduce the possibilities of pile-up and fast readout to improve the detector data capability. To satisfy these requirements, a novel Address-Encoder and Reset-Decoder (AERD) asynchronous circuit for a fast readout of a pixel matrix has been developed. The AERD data-driven readout architecture operates the address encoding and reset decoding based on an arbitration tree, and allows us to readout only the hit pixels. Compared to the traditional readout structure of the rolling shutter scheme in Monolithic Active Pixel Sensors (MAPS), AERD can achieve a low readout time and a low power consumption especially for low hit occupancies. The readout is controlled at the chip periphery with a signal synchronous with the clock, allows a good digital and analogue signal separation in the matrix and a reduction of the power consumption. The AERD circuit has been implemented in the TowerJazz 180 nm CMOS Imaging Sensor (CIS) process with full complementary CMOS logic in the pixel. It works at 10 MHz with a matrix height of 15 mm. The energy consumed to read out one pixel is around 72 pJ. A scheme to boost the readout speed to 40 MHz is also discussed. The sensor chip equipped with AERD has been produced and characterised. Test results including electrical beam measurement are presented.
Uncooled thin film pyroelectric IR detector with aerogel thermal isolation
Ruffner, Judith A.; Bullington, Jeff A.; Clem, Paul G.; Warren, William L.; Brinker, C. Jeffrey; Tuttle, Bruce A.; Schwartz, Robert W.
1999-01-01
A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.
146-GHz millimeter-wave radio-over-fiber photonic wireless transmission system.
Fice, M J; Rouvalis, E; van Dijk, F; Accard, A; Lelarge, F; Renaud, C C; Carpintero, G; Seeds, A J
2012-01-16
We report the experimental implementation of a wireless transmission system with a 146-GHz carrier frequency which is generated by optical heterodyning the two modes from a monolithically integrated quantum dash dual-DFB source. The monolithic structure of the device and the inherent low noise characteristics of quantum dash gain material allow us to demonstrate the transmission of a 1 Gbps ON-OFF keyed data signal with the two wavelengths in a free-running state at 146-GHz carrier wave frequency. The tuning range of the device fully covers the W-band (75 - 110 GHz) and the F-band (90 - 140 GHz).
Nanosecond monolithic CMOS readout cell
Souchkov, Vitali V.
2004-08-24
A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.
Monolithic coupling of a SU8 waveguide to a silicon photodiode
NASA Astrophysics Data System (ADS)
Nathan, M.; Levy, O.; Goldfarb, I.; Ruzin, A.
2003-12-01
We present quantitative results of light coupling from SU8 waveguides into silicon p-n photodiodes in monolithically integrated structures. Multimode, 12 μm thick, and 20 μm wide SU8 waveguides were fabricated to overlap 40×180 μm2 photodiodes, with three different waveguide-photodiode overlap lengths. The attenuation due to leaky-mode coupling in the overlap area was then calculated from photocurrent measurements. The overlap attenuation ranged from a minimum of 2.2 dB per mm overlap length to a maximum of about 3 dB/mm, comparing favorably with reported nonpolymeric waveguide-Si photodiode attenuations.
Setting the right path and pace for integration.
Cwiek, Katherine A; Inniger, Meredith C; Zismer, Daniel K
2014-04-01
Far from being a monolithic trend, integration in health care today is progressing in various forms, and at different rates in different markets within and across the range of healthcare organizations. Each organization should develop a tailored strategy that delineates the level and type of integration it will pursue and at what pace to pursue it. This effort will require evaluation of external market conditions with respect to integration and competition and a candid assessment of intraorganizational integration. The compared results of the two analyses will provide the basis for formulating strategy.
O`Connor, P.
1998-08-11
A monolithic amplifier includes a stable, high resistance feedback circuit and a dynamic bias circuit. The dynamic bias circuit is formed with active elements matched to those in the amplifier and feedback circuit to compensate for variations in the operating and threshold voltages thereby maintaining a stable resistance in the feedback circuit. 11 figs.
NASA Astrophysics Data System (ADS)
Gatica, José M.; Harti, Sanae; Vidal, Hilario
2010-09-01
Coal-based honeycomb monoliths extruded using methods developed for ceramic materials have been used to retain methylene blue and p-nitrophenol from aqueous solutions. The influence of the filters' thermal treatment on their textural properties and performance as adsorbents was examined. Characterization by N 2 physisorption, mercury porosimetry and scanning electron microscopy along with adsorption tests under dynamic conditions suggest that, depending on the pollutant and its initial concentration, it can be more convenient to previously submit the monoliths to a simple carbonization or to an additional activation, with or without preoxidation, as a consequence of their different resulting pore structures. Infrared spectroscopy indicates that their different adsorption behaviour seems not to be related to differences in their surface chemical groups. In addition, axial crushing tests show that the monoliths have an acceptable mechanical resistance for the application investigated.
SiNOI and AlGaAs-on-SOI nonlinear circuits for continuum generation in Si photonics
NASA Astrophysics Data System (ADS)
El Dirani, Houssein; Monat, Christelle; Brision, Stéphane; Olivier, Nicolas; Jany, Christophe; Letartre, Xavier; Pu, Minhao; Girouard, Peter D.; Hagedorn Frandsen, Lars; Semenova, Elizaveta; Katsuo Oxenløwe, Leif; Yvind, Kresten; Sciancalepore, Corrado
2018-02-01
In this communication, we report on the design, fabrication, and testing of Silicon Nitride on Insulator (SiNOI) and Aluminum-Gallium-Arsenide (AlGaAs) on silicon-on-insulator (SOI) nonlinear photonic circuits for continuum generation in Silicon (Si) photonics. As recently demonstrated, the generation of frequency continua and supercontinua can be used to overcome the intrinsic limitations of nowadays silicon photonics notably concerning the heterogeneous integration of III-V on SOI lasers for datacom and telecom applications. By using the Kerr nonlinearity of monolithic silicon nitride and heterointegrated GaAs-based alloys on SOI, the generation of tens or even hundreds of new optical frequencies can be obtained in dispersion tailored waveguides, thus providing an all-optical alternative to the heterointegration of hundreds of standalone III-V on Si lasers. In our work, we present paths to energy-efficient continua generation on silicon photonics circuits. Notably, we demonstrate spectral broadening covering the full C-band via Kerrbased self-phase modulation in SiNOI nanowires featuring full process compatibility with Si photonic devices. Moreover, AlGaAs waveguides are heterointegrated on SOI in order to dramatically reduce (x1/10) thresholds in optical parametric oscillation and in the power required for supercontinuum generation under pulsed pumping. The manufacturing techniques allowing the monolithic co-integration of nonlinear functionalities on existing CMOS-compatible Si photonics for both active and passive components will be shown. Experimental evidence based on self-phase modulation show SiNOI and AlGaAs nanowires capable of generating wide-spanning frequency continua in the C-Band. This will pave the way for low-threshold power-efficient Kerr-based comb- and continuum- sources featuring compatibility with Si photonic integrated circuits (Si-PICs).
NASA Astrophysics Data System (ADS)
Wei, Wei; Zhang, Yang; Xu, Qiang; Wei, Haotong; Fang, Yanjun; Wang, Qi; Deng, Yehao; Li, Tao; Gruverman, Alexei; Cao, Lei; Huang, Jinsong
2017-04-01
The monolithic integration of new optoelectronic materials with well-established inexpensive silicon circuitry is leading to new applications, functionality and simple readouts. Here, we show that single crystals of hybrid perovskites can be integrated onto virtually any substrates, including silicon wafers, through facile, low-temperature, solution-processed molecular bonding. The brominated (3-aminopropyl)triethoxysilane molecule binds the native oxide of silicon and participates in the perovskite crystal with its ammonium bromide group, yielding a solid mechanical and electrical connection. The dipole of the bonding molecule reduces device noise while retaining signal intensity. The reduction of dark current enables the detectors to be operated at increased bias, resulting in a sensitivity of 2.1 × 104 µC Gyair-1 cm-2 under 8 keV X-ray radiation, which is over a thousand times higher than the sensitivity of amorphous selenium detectors. X-ray imaging with both perovskite pixel detectors and linear array detectors reduces the total dose by 15-120-fold compared with state-of-the-art X-ray imaging systems.
Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip
NASA Astrophysics Data System (ADS)
Nakane, R.; Shuto, Y.; Sukegawa, H.; Wen, Z. C.; Yamamoto, S.; Mitani, S.; Tanaka, M.; Inomata, K.; Sugahara, S.
2014-12-01
We demonstrate monolithic integration of pseudo-spin-MOSFETs (PS-MOSFETs) using vendor-made MOSFETs fabricated in a low-cost multi-project wafer (MPW) product and lab-made magnetic tunnel junctions (MTJs) formed on the topmost passivation film of the MPW chip. The tunneling magnetoresistance (TMR) ratio of the fabricated MTJs strongly depends on the surface roughness of the passivation film. Nevertheless, after the chip surface was atomically flattened by SiO2 deposition on it and successive chemical-mechanical polish (CMP) process for the surface, the fabricated MTJs on the chip exhibits a sufficiently large TMR ratio (>140%) adaptable to the PS-MOSFET application. The implemented PS-MOSFETs show clear modulation of the output current controlled by the magnetization configuration of the MTJs, and a maximum magnetocurrent ratio of 90% is achieved. These magnetocurrent behaviour is quantitatively consistent with those predicted by HSPICE simulations. The developed integration technique using a MPW CMOS chip would also be applied to monolithic integration of CMOS devices/circuits and other various functional devices/materials, which would open the door for exploring CMOS-based new functional hybrid circuits.
NASA Astrophysics Data System (ADS)
Bano, Mustri; Ahirwar, Devendra; Thomas, Molly; Sheikh, Mehraj Ud Din; Khan, Farid
2017-04-01
An elegant method is used to prepare silver monoliths with Pluronic F-127(F-127) as sacrificial template by modified sol-gel method. Si nanoparticles (SiNPs) and graphene oxide (GO) are added in situ to Ag/F-127 hydrogel for the reduction of ο-nitroaniline (ο-NA) to 1, 2-benzenediamine. Fourier Transform Infrared Spectroscopy (FT-IR), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Thermogravimetric analysis (TGA), Raman Spectroscopy, Powder X-Ray Diffraction (PXRD) analysis and Brunauer-Emmett-Teller (BET) Nitrogen adsorption techniques were used for characterization of monoliths. An epoch-making catalytic activity of Ag/F-127/GO monoliths is observed in the reduction of ο-NA to 1, 2-benzenediamine in presence of NaBH4 in aqueous media. The catalyst Ag/F-127/GO took only 2 min which is the minimum time reported so far with significant rate constant claimed itself a leading catalyst for the reduction of ο-NA to 1,2-benzenediamine. Pseudo first order rate constant (k) and Turn over frequency (TOF) values are 0.231 min-1 and 30.053×1019 molecules min-1 respectively suggest that the catalyst has industrial importance. Recyclability and stability of Ag/F-127/GO catalyst are studied successfully up to 10 cycles. Energy of activation (Ea), and thermodynamic parameters viz. activation enthalpy (ΔH≠), activation Gibbs free energy (ΔG≠), and entropy of activation (ΔS≠) were also ascertained. Catalytic activities of Ag/F-127, Ag/F-127/Dextran, Ag/F-127/Trimethylbenzene (TMB), Ag/F-127/SiNPs, and Ag/F-127/Si/GO monoliths were also studied.
A Ku band 5 bit MEMS phase shifter for active electronically steerable phased array applications
NASA Astrophysics Data System (ADS)
Sharma, Anesh K.; Gautam, Ashu K.; Farinelli, Paola; Dutta, Asudeb; Singh, S. G.
2015-03-01
The design, fabrication and measurement of a 5 bit Ku band MEMS phase shifter in different configurations, i.e. a coplanar waveguide and microstrip, are presented in this work. The development architecture is based on the hybrid approach of switched and loaded line topologies. All the switches are monolithically manufactured on a 200 µm high resistivity silicon substrate using 4 inch diameter wafers. The first three bits (180°, 90° and 45°) are realized using switched microstrip lines and series ohmic MEMS switches whereas the fourth and fifth bits (22.5° and 11.25°) consist of microstrip line sections loaded by shunt ohmic MEMS devices. Individual bits are fabricated and evaluated for performance and the monolithic device is a 5 bit Ku band (16-18 GHz) phase shifter with very low average insertion loss of the order of 3.3 dB and a return loss better than 15 dB over the 32 states with a chip area of 44 mm2. A total phase shift of 348.75° with phase accuracy within 3° is achieved over all of the states. The performance of individual bits has been optimized in order to achieve an integrated performance so that they can be implemented into active electronically steerable antennas for phased array applications.
Low-cost 20-22 GHz MIC active receiver/radiometer
NASA Technical Reports Server (NTRS)
Mollenkopf, Steven; Katehi, Linda P. B.; Rebeiz, Gabriel M.
1995-01-01
A microwave integrated circuit active receiver is built and tested at 19-25 GHz. The receiver consists of a planar CPW-fed double folded-slot antenna coupled to a six-stage MESFET (metal semiconductor field effect transistors) amplifier and followed by a planar Schottky-diode detector. The folded-slot antenna on a GaAs half-space results in a wide frequency bandwidth suitable for MMIC amplifiers. The measured system performance show a video responsivity close to 1 GV/W at 20 GHz with a 3-dB bandwidth of 1500 MHz. A novel method which uses the planar video detector after the amplifier stages as an RF (radio frequency) mixer is used to measure the noise-figure of the direct detection radiometer. The system noise figure is 4.8 dB at 22 GHz. The radiometer sensitivity to a hot/cold load is 3.8 mu V/K. The measured antenna patterns show a 90% Gaussicity at 20-22 GHz. The active MIC receiver can be integrated monolithically for low-cost applications and is well suited for millimeter-wave linear imaging arrays.
Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter
NASA Technical Reports Server (NTRS)
Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)
2003-01-01
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.
Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter
NASA Technical Reports Server (NTRS)
Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)
2000-01-01
An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.
NASA Astrophysics Data System (ADS)
Remillard, Jonathan
The concern of contaminated sites is affecting millions of property owner worldwide. As they pose a risk to the environment, human health or impair the value of buildings, remediation of contaminated sites has become an everyday issue. Stabilization/solidification (S/S) of contaminated soils with cement is a remediation technology that was developed to confine contaminants that cannot be degraded biologically, chemically or thermally by other technologies. Soils treated with S/S form a monolith that can be valorized on site. However, this practice is fairly uncommon in Quebec and this reluctance is partly due to the risks of degradation of the monoliths and the lack of knowledge relative to the long-term behavior of altered monoliths. The objective of this project was to simulate these degradations on cement-based monoliths of contaminated soils treated with S/S technology by causing physical alterations using different cycles of freeze/thawing and drying/wetting, and then to study the impact of these alterations on the mass losses, compressive strength, hydraulic conductivity, pH and leachability of five trace metals (Cd, Cr, Cu, Pb and Zn) used as contaminants. Various processes of S/S have been studied, either cement contents of 15 and 20%, then the presence of 5% by weight of calcium carbonate. For each S/S process formulated, the freeze/thaw cycles were much more effective in physically altering the monoliths. These alterations were mainly reflected by lower compressive strength, even more with lower cement contents. For their part, the drying/wetting cycles rather created a chemical change that lowered the pH of the monoliths. These chemical changes also affected the interpretation of leaching test results, especially for copper and zinc, since it was difficult to attribute effects to either physical or chemical alterations. The results showed that only chromium leached more clearly in response to physical alterations. All other elements studied were little affected, even though some samples were highly altered. This demonstrates that in some cases, damages may have little impact on long-term performance of the monoliths in terms of contaminant immobilization. However, integrating the study of long-term behaviors of monoliths in a process of formulation for contaminated soil treatment with S/S can become paramount, as seen for chromium in this present study.
Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
Bryan, R.P.; Esherick, P.; Jewell, J.L.; Lear, K.L.; Olbright, G.R.
1997-04-29
A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications. 9 figs.
Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
Bryan, Robert P.; Esherick, Peter; Jewell, Jack L.; Lear, Kevin L.; Olbright, Gregory R.
1997-01-01
A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.
2016-03-31
Corporation, Linthicum, Maryland *Corresponding author: Pavel.Borodulin@ngc.com Abstract: A chip -scale, highly-reconfigurable transmitter and...the technology has been used in a chip -scale, reconfigurable receiver demonstration and ongoing efforts to increase the level of performance and...circuit (RF-FPGA). It consists of a heterogeneous assembly of a SiGe BiCMOS chip with multiple 3D-integrated, low-loss, phase-change switch chiplets
Design and evaluation of a GaAs MMIC X-band active RC quadrature power divider
NASA Astrophysics Data System (ADS)
Henkus, J. C.
1991-03-01
The design and evaluation of a GaAs MMIC (Microwave Monolithic Integrated Circuit) X-band active RC Quadrature Power Divider (QPD) is addressed. This QPD can be used as part of a vector modulator. The chosen QPD topology consists of two active first order RC all pass networks and was converted into an MMIC design. The design is completely symmetrical except for two key resistors. On-wafer S parameter measurements were carried out; a special probe head configuration was composed in order to avoid measurement accuracy degradation associated with the reversal of the active output of the QPD. The measured nominal RF behavior of the chips complies with the simulated behavior to a very high degree. The optical, DC, and RF yield is very large (97, 83, and 74 percent respectively). A modification to Takashi's all pass network was proposed which offers gain/frequency slope control and compensation ability.
NASA Astrophysics Data System (ADS)
Wang, T.; Barbero, M.; Berdalovic, I.; Bespin, C.; Bhat, S.; Breugnon, P.; Caicedo, I.; Cardella, R.; Chen, Z.; Degerli, Y.; Egidos, N.; Godiot, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Krüger, H.; Kugathasan, T.; Hügging, F.; Marin Tobon, C. A.; Moustakas, K.; Pangaud, P.; Schwemling, P.; Pernegger, H.; Pohl, D.-L.; Rozanov, A.; Rymaszewski, P.; Snoeys, W.; Wermes, N.
2018-03-01
Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. DMAPS integrating fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-Monopix and TJ-Monopix, are presented. LF-Monopix was fabricated in the LFoundry 150 nm CMOS technology, and TJ-Monopix has been designed in the TowerJazz 180 nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The paper makes a joint description of the two prototypes, so that their technical differences and challenges can be addressed in direct comparison. First measurement results for LF-Monopix will also be shown, demonstrating for the first time a fully functional fast readout DMAPS prototype implemented in the LFoundry technology.
Ni, Zao; Yang, Chen; Xu, Dehui; Zhou, Hong; Zhou, Wei; Li, Tie; Xiong, Bin; Li, Xinxin
2013-01-16
We report a newly developed design/fabrication module with low-cost single-sided "low-stress-silicon-nitride (LS-SiN)/polysilicon (poly-Si)/Al" process for monolithic integration of composite sensors for sensing-network-node applications. A front-side surface-/bulk-micromachining process on a conventional Si-substrate is developed, featuring a multifunctional SiN/poly-Si/Al layer design for diverse sensing functions. The first "pressure + acceleration + temperature + infrared" (PATIR) composite sensor with the chip size of 2.5 mm × 2.5 mm is demonstrated. Systematic theoretical design and analysis methods are developed. The diverse sensing components include a piezoresistive absolute-pressure sensor (up to 700 kPa, with a sensitivity of 49 mV/MPa under 3.3 V supplied voltage), a piezoresistive accelerometer (±10 g, with a sensitivity of 66 μV/g under 3.3 V and a -3 dB bandwidth of 780 Hz), a thermoelectric infrared detector (with a responsivity of 45 V/W and detectivity of 3.6 × 107 cm·Hz1/2/W) and a thermistor (-25-120 °C). This design/fabrication module concept enables a low-cost monolithically-integrated "multifunctional-library" technique. It can be utilized as a customizable tool for versatile application-specific requirements, which is very useful for small-size, low-cost, large-scale sensing-network node developments.
Scalable InP integrated wavelength selector based on binary search.
Calabretta, Nicola; Stabile, Ripalta; Albores-Mejia, Aaron; Williams, Kevin A; Dorren, Harm J S
2011-10-01
We present an InP monolithically integrated wavelength selector that implements a binary search for selecting one from N modulated wavelengths. The InP chip requires only log(2)N optical filters and log(2)N optical switches. Experimental results show nanosecond reconfiguration and error-free wavelength selection of four modulated wavelengths with 2 dB of power penalty. © 2011 Optical Society of America
Santini, Guillaume; Caillaud, Christophe; Paret, Jean-François; Pommereau, Frederic; Mekhazni, Karim; Calo, Cosimo; Achouche, Mohand
2017-10-16
We demonstrate a single polarization monolithically integrated coherent receiver on an InP substrate with a SOA preamplifier, a 90° optical hybrid, and four 40 GHz UTC photodiodes. Record performances with responsivity above 4 A/W with low imbalance <1 dB and error free detection of 32 Gbaud QPSK signals were simultaneously demonstrated.
Lin, Fang-Zheng; Wu, Tsu-Hsiu; Chiu, Yi-Jen
2009-06-08
A new monolithic integration scheme, namely cascaded-integration (CI), for improving high-speed optical modulation is proposed and demonstrated. High-speed electroabsorption modulators (EAMs) and semiconductor optical amplifiers (SOAs) are taken as the integrated elements of CI. This structure is based on an optical waveguide defined by cascading segmented EAMs with segmented SOAs, while high-impedance transmission lines (HITLs) are used for periodically interconnecting EAMs, forming a distributive optical re-amplification and re-modulation. Therefore, not only the optical modulation can be beneficial from SOA gain, but also high electrical reflection due to EAM low characteristic impedance can be greatly reduced. Two integration schemes, CI and conventional single-section (SS), with same total EAM- and SOA- lengths are fabricated and compared to examine the concept. Same modulation-depth against with EAM bias (up to 5V) as well as SOA injection current (up to 60mA) is found in both structures. In comparison with SS, a < 1dB extra optical-propagation loss in CI is measured due to multi-sections of electrical-isolation regions between EAMs and SOAs, suggesting no significant deterioration in CI on DC optical modulation efficiency. Lower than -12dB of electrical reflection from D.C. to 30GHz is observed in CI, better than -5dB reflection in SS for frequency of above 5GHz. Superior high-speed electrical properties in CI structure can thus lead to higher speed of electrical-to-optical (EO) response, where -3dB bandwidths are >30GHz and 13GHz for CI and SS respectively. Simulation results on electrical and EO response are quite consistent with measurement, confirming that CI can lower the driving power at high-speed regime, while the optical loss is still kept the same level. Taking such distributive advantage (CI) with optical gain, not only higher-speed modulation with high output optical power can be attained, but also the trade-off issue due to impedance mismatch can be released to reduce the driving power of modulator. Such kind of monolithic integration scheme also has potential for the applications of other high-speed optoelectronics devices.
Activated carbon fiber composite material and method of making
Burchell, Timothy D.; Weaver, Charles E.; Chilcoat, Bill R.; Derbyshire, Frank; Jagtoyen, Marit
2000-01-01
An activated carbon fiber composite for separation and purification, or catalytic processing of fluids is described. The activated composite comprises carbon fibers rigidly bonded to form an open, permeable, rigid monolith capable of being formed to near-net-shape. Separation and purification of gases are effected by means of a controlled pore structure that is developed in the carbon fibers contained in the composite. The open, permeable structure allows the free flow of gases through the monolith accompanied by high rates of adsorption. By modification of the pore structure and bulk density the composite can be rendered suitable for applications such as gas storage, catalysis, and liquid phase processing.
Activated carbon fiber composite material and method of making
Burchell, Timothy D.; Weaver, Charles E.; Chilcoat, Bill R.; Derbyshire, Frank; Jagtoyen, Marit
2001-01-01
An activated carbon fiber composite for separation and purification, or catalytic processing of fluids is described. The activated composite comprises carbon fibers rigidly bonded to form an open, permeable, rigid monolith capable of being formed to near-net-shape. Separation and purification of gases are effected by means of a controlled pore structure that is developed in the carbon fibers contained in the composite. The open, permeable structure allows the free flow of gases through the monolith accompanied by high rates of adsorption. By modification of the pore structure and bulk density the composite can be rendered suitable for applications such as gas storage, catalysis, and liquid phase processing.
Ultra-Low Loss Waveguides with Application to Photonic Integrated Circuits
NASA Astrophysics Data System (ADS)
Bauters, Jared F.
The integration of photonic components using a planar platform promises advantages in cost, size, weight, and power consumption for optoelectronic systems. Yet, the typical propagation loss of 5-10 dB/m in a planar silica waveguide is nearly five orders-of-magnitude larger than that in low loss optical fibers. For some applications, the miniaturization of the photonic system and resulting smaller propagation lengths from integration are enough to overcome the increase in propagation loss. For other more demanding systems or applications, such as those requiring long optical time delays or high-quality-factor (Q factor) resonators, the high propagation loss can degrade system performance to a degree that trumps the potential advantages offered by integration. Thus, the reduction of planar waveguide propagation loss in a Si3-N4 based waveguide platform is a primary focus of this dissertation. The ultra-low loss stoichiometric Si3-N4 waveguide platform offers the additional advantages of fabrication process stability and repeatability. Yet, active devices such as lasers, amplifiers, and photodetectors have not been monolithically integrated with ultra-low loss waveguides due to the incompatibility of the active and ultra-low loss processing thermal budgets (ultra-low loss waveguides are annealed at temperatures exceeding 1000 °C in order to drive out impurities). So a platform that enables the integration of active devices with the ultra-low losses of the Si3- N4 waveguide platform is this dissertation's second focus. The work enables the future fabrication of sensor, gyroscope, true time delay, and low phase noise oscillator photonic integrated circuits.
Computer-aided design comparisons of monolithic and hybrid MEM-tunable VCSELs
NASA Astrophysics Data System (ADS)
Ochoa, Edward M.; Nelson, Thomas R., Jr.; Blum-Spahn, Olga; Lott, James A.
2003-07-01
We report and use our micro-electro-mechanically tunable vertical cavity surface emitting laser (MEM-TVCSEL) computer-aided design methodology to investigate the resonant frequency design space for monolithic and hybrid MEM-TVCSELs. For various initial optical air gap thickness, we examine the sensitivity of monolithic or hybrid MEM-TVCSEL resonant frequency by simulating zero, two, and four percent variations in III-V material growth thickness. As expected, as initial optical airgap increases, tuning range decreases due to less coupling between the active region and the tuning mirror. However, each design has different resonant frequency sensitivity to variations in III-V growth parameters. In particular, since the monolithic design is comprised of III-V material, the shift in all growth thicknesses significantly shifts the resonant frequency response. However, for hybrid MEMTVCSELs, less shift results, since the lower reflector is an Au mirror with reflectivity independent of III-V growth variations. Finally, since the hybrid design is comprised of a MUMPS polysilicon mechanical actuator, pull-in voltage remains independent of the initial optical airgap between the tuning reflector and the III-V material. Conversely, as the initial airgap increases in the monolithic design, the pull-in voltage significantly increases.
NASA Astrophysics Data System (ADS)
Casale, Marco; Kerdiles, Sebastien; Brianceau, Pierre; Hugues, Vincent; El Dirani, Houssein; Sciancalepore, Corrado
2017-02-01
In this communication, authors report for the first time on the fabrication and testing of Si3N4 non-linear photonic circuits for CMOS-compatible monolithic co-integration with silicon-based optoelectronics. In particular, a novel process has been developed to fabricate low-loss crack-free Si3N4 750-nm-thick films for Kerr-based nonlinear functions featuring full thermal budget compatibility with existing Silicon photonics and front-end Si optoelectronics. Briefly, differently from previous and state-of-the-art works, our nonlinear nitride-based platform has been realized without resorting to commonly-used high-temperature annealing ( 1200°C) of the film and its silica upper-cladding used to break N-H bonds otherwise causing absorption in the C-band and destroying its nonlinear functionality. Furthermore, no complex and fabrication-intolerant Damascene process - as recently reported earlier this year - aimed at controlling cracks generated in thick tensile-strained Si3N4 films has been used as well. Instead, a tailored Si3N4 multiple-step film deposition in 200-mm LPCVD-based reactor and subsequent low-temperature (400°C) PECVD oxide encapsulation have been used to fabricate the nonlinear micro-resonant circuits aiming at generating optical frequency combs via optical parametric oscillators (OPOs), thus allowing the monolithic co-integration of such nonlinear functions on existing CMOS-compatible optoelectronics, for both active and passive components such as, for instance, silicon modulators and wavelength (de-)multiplexers. Experimental evidence based on wafer-level statistics show nitride-based 112-μm-radius ring resonators using such low-temperature crack-free nitride film exhibiting quality factors exceeding Q >3 x 105, thus paving the way to low-threshold power-efficient Kerr-based comb sources and dissipative temporal solitons in the C-band featuring full thermal processing compatibility with Si photonic integrated circuits (Si-PICs).
A wide-band 760-GHz planar integrated Schottky receiver
NASA Technical Reports Server (NTRS)
Gearhart, Steven S.; Hesler, Jeffrey; Bishop, William L.; Crowe, Thomas W.; Rebeiz, Gabriel M.
1993-01-01
A wideband planar integrated heterodyne receiver has been developed for use at submillimeter-wave to FIR frequencies. The receiver consists of a log-periodic antenna integrated with a planar 0.8-micron GaAs Schottky diode. The monolithic receiver is placed on a silicon lens and has a measured room temperature double side-band conversion loss and noise temperature of 14.9 +/- 1.0 dB and 8900 +/- 500 K, respectively, at 761 GHz. These results represent the best performance to date for room temperature integrated receivers at this frequency.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bano, Mustri; Ahirwar, Devendra; Thomas, Molly
An elegant method is used to prepare silver monoliths with Pluronic F-127(F-127) as sacrificial template by modified sol-gel method. Si nanoparticles (SiNPs) and graphene oxide (GO) are added in situ to Ag/F-127 hydrogel for the reduction of ο-nitroaniline (ο-NA) to 1, 2-benzenediamine. Fourier Transform Infrared Spectroscopy (FT-IR), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Thermogravimetric analysis (TGA), Raman Spectroscopy, Powder X-Ray Diffraction (PXRD) analysis and Brunauer-Emmett-Teller (BET) Nitrogen adsorption techniques were used for characterization of monoliths. An epoch-making catalytic activity of Ag/F-127/GO monoliths is observed in the reduction of ο-NA to 1, 2-benzenediamine in presence of NaBH{sub 4} inmore » aqueous media. The catalyst Ag/F-127/GO took only 2 min which is the minimum time reported so far with significant rate constant claimed itself a leading catalyst for the reduction of ο-NA to 1,2-benzenediamine. Pseudo first order rate constant (k) and Turn over frequency (TOF) values are 0.231 min{sup −1} and 30.053×10{sup 19} molecules min{sup −1} respectively suggest that the catalyst has industrial importance. Recyclability and stability of Ag/F-127/GO catalyst are studied successfully up to 10 cycles. Energy of activation (E{sub a}), and thermodynamic parameters viz. activation enthalpy (ΔH{sup ≠}), activation Gibbs free energy (ΔG{sup ≠}), and entropy of activation (ΔS{sup ≠}) were also ascertained. Catalytic activities of Ag/F-127, Ag/F-127/Dextran, Ag/F-127/Trimethylbenzene (TMB), Ag/F-127/SiNPs, and Ag/F-127/Si/GO monoliths were also studied. - Graphical abstract: Significant catalytic activities of silver monoliths against the reduction of ο-NA to 1,2 benzenediamine. - Highlights: • A new catalyst synthesized Ag/F-127/GO for the reduction of ο- NA to 1, 2- benzenediamine took only 2 min. • Turn over frequency of as synthesized catalyst was 30.053×10{sup 19} molecules min{sup −1} claimed itself a leading catalyst. • Recyclability of the catalyst was up to 10 cycles. • The synthesis is non toxic, economically viable and environmentally benign.« less
Low-sensitivity, frequency-selective amplifier circuits for hybrid and bipolar fabrication.
NASA Technical Reports Server (NTRS)
Pi, C.; Dunn, W. R., Jr.
1972-01-01
A network is described which is suitable for realizing a low-sensitivity high-Q second-order frequency-selective amplifier for high-frequency operation. Circuits are obtained from this network which are well suited for realizing monolithic integrated circuits and which do not require any process steps more critical than those used for conventional monolithic operational and video amplifiers. A single chip version using compatible thin-film techniques for the frequency determination elements is then feasible. Center frequency and bandwidth can be set independently by trimming two resistors. The frequency selective circuits have a low sensitivity to the process variables, and the sensitivity of the center frequency and bandwidth to changes in temperature is very low.
Computer modeling of a two-junction, monolithic cascade solar cell
NASA Technical Reports Server (NTRS)
Lamorte, M. F.; Abbott, D.
1979-01-01
The theory and design criteria for monolithic, two-junction cascade solar cells are described. The departure from the conventional solar cell analytical method and the reasons for using the integral form of the continuity equations are briefly discussed. The results of design optimization are presented. The energy conversion efficiency that is predicted for the optimized structure is greater than 30% at 300 K, AMO and one sun. The analytical method predicts device performance characteristics as a function of temperature. The range is restricted to 300 to 600 K. While the analysis is capable of determining most of the physical processes occurring in each of the individual layers, only the more significant device performance characteristics are presented.
Multinozzle emitter arrays for ultrahigh-throughput nanoelectrospray mass spectrometry
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Daojing; Mao, Pan; Wang, Hung-Ta
The present invention provides for a structure comprising a plurality of emitters, wherein a first nozzle of a first emitter and a second nozzle of a second emitter emit in two directions that are not or essentially not in the same direction; wherein the walls of the nozzles and the emitters form a monolithic whole. The present invention also provides for a structure comprising an emitter with a sharpened end from which the emitter emits; wherein the emitters forms a monolithic whole. The present invention also provides for a fully integrated separation of proteins and small molecules on a siliconmore » chip before the electrospray mass spectrometry analysis.« less
Transferrable monolithic multicomponent system for near-ultraviolet optoelectronics
NASA Astrophysics Data System (ADS)
Qin, Chuan; Gao, Xumin; Yuan, Jialei; Shi, Zheng; Jiang, Yuan; Liu, Yuhuai; Wang, Yongjin; Amano, Hiroshi
2018-05-01
A monolithic near-ultraviolet multicomponent system is implemented on a 0.8-mm-diameter suspended membrane by integrating a transmitter, waveguide, and receiver into a single chip. Two identical InGaN/Al0.10Ga0.90N multiple-quantum well (MQW) diodes are fabricated using the same process flow, which separately function as a transmitter and receiver. There is a spectral overlap between the emission and detection spectra of the MQW diodes. Therefore, the receiver can respond to changes in the emission of the transmitter. The multicomponent system is mechanically transferred from silicon, and the wire-bonded transmitter on glass experimentally demonstrates spatial light transmission at 200 Mbps using non-return-to-zero on–off keying modulation.
Wang, Sibo; Wu, Yunchao; Miao, Ran; ...
2017-07-26
Scalable and cost-effective synthesis and assembly of technologically important nanostructures in three-dimensional (3D) substrates hold keys to bridge the demonstrated nanotechnologies in academia with industrially relevant scalable manufacturing. In this paper, using ZnO nanorod arrays as an example, a hydrothermal-based continuous flow synthesis (CFS) method is successfully used to integrate the nano-arrays in multi-channeled monolithic cordierite. Compared to the batch process, CFS enhances the average growth rate of nano-arrays by 125%, with the average length increasing from 2 μm to 4.5 μm within the same growth time of 4 hours. The precursor utilization efficiency of CFS is enhanced by 9more » times compared to that of batch process by preserving the majority of precursors in recyclable solution. Computational fluid dynamic simulation suggests a steady-state solution flow and mass transport inside the channels of honeycomb substrates, giving rise to steady and consecutive growth of ZnO nano-arrays with an average length of 10 μm in 12 h. The monolithic ZnO nano-array-integrated cordierite obtained through CFS shows enhanced low-temperature (200 °C) desulfurization capacity and recyclability in comparison to ZnO powder wash-coated cordierite. This can be attributed to exposed ZnO {101¯0} planes, better dispersion and stronger interactions between sorbent and reactant in the ZnO nanorod arrays, as well as the sintering-resistance of nano-array configurations during sulfidation–regeneration cycles. Finally, with the demonstrated scalable synthesis and desulfurization performance of ZnO nano-arrays, a promising, industrially relevant integration strategy is provided to fabricate metal oxide nano-array-based monolithic devices for various environmental and energy applications.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Sibo; Wu, Yunchao; Miao, Ran
Scalable and cost-effective synthesis and assembly of technologically important nanostructures in three-dimensional (3D) substrates hold keys to bridge the demonstrated nanotechnologies in academia with industrially relevant scalable manufacturing. In this paper, using ZnO nanorod arrays as an example, a hydrothermal-based continuous flow synthesis (CFS) method is successfully used to integrate the nano-arrays in multi-channeled monolithic cordierite. Compared to the batch process, CFS enhances the average growth rate of nano-arrays by 125%, with the average length increasing from 2 μm to 4.5 μm within the same growth time of 4 hours. The precursor utilization efficiency of CFS is enhanced by 9more » times compared to that of batch process by preserving the majority of precursors in recyclable solution. Computational fluid dynamic simulation suggests a steady-state solution flow and mass transport inside the channels of honeycomb substrates, giving rise to steady and consecutive growth of ZnO nano-arrays with an average length of 10 μm in 12 h. The monolithic ZnO nano-array-integrated cordierite obtained through CFS shows enhanced low-temperature (200 °C) desulfurization capacity and recyclability in comparison to ZnO powder wash-coated cordierite. This can be attributed to exposed ZnO {101¯0} planes, better dispersion and stronger interactions between sorbent and reactant in the ZnO nanorod arrays, as well as the sintering-resistance of nano-array configurations during sulfidation–regeneration cycles. Finally, with the demonstrated scalable synthesis and desulfurization performance of ZnO nano-arrays, a promising, industrially relevant integration strategy is provided to fabricate metal oxide nano-array-based monolithic devices for various environmental and energy applications.« less
Single-frequency, fully integrated, miniature DPSS laser based on monolithic resonator
NASA Astrophysics Data System (ADS)
Dudzik, G.; Sotor, J.; Krzempek, K.; Soboń, G.; Abramski, K. M.
2014-02-01
We present a single frequency, stable, narrow linewidth, miniature laser sources operating at 532 nm (or 1064 nm) based on a monolithic resonators. Such resonators utilize birefringent filters formed by YVO4 beam displacer and KTP or YVO4 crystals to force single frequency operation at 532 nm or 1064 nm, respectively. In both configurations Nd:YVO4 gain crystal is used. The resonators dimensions are 1x1x10.5 mm3 and 1x1x8.5 mm3 for green and infrared configurations, respectively. Presented laser devices, with total dimensions of 40x52x120 mm3, are fully equipped with driving electronics, pump diode, optical and mechanical components. The highly integrated (36x15x65 mm3) low noise driving electronics with implemented digital PID controller was designed. It provides pump current and resonator temperature stability of ±30 μA@650 mA and ±0,003ºC, respectively. The laser parameters can be set and monitored via the USB interface by external application. The developed laser construction is universal. Hence, the other wavelengths can be obtained only by replacing the monolithic resonator. The optical output powers in single frequency regime was at the level of 42 mW@532 nm and 0.5 W@1064 nm with the long-term fluctuations of ±0.85 %. The linewidth and the passive frequency stability under the free running conditions were Δν < 100 kHz and 3ṡ10-9@1 s integration time, respectively. The total electrical power supply consumption of laser module was only 4 W. Presented compact, single frequency laser operating at 532 nm and 1064 nm may be used as an excellent source for laser vibrometry, interferometry or seed laser for fiber amplifiers.
Josephson junction microwave modulators for qubit control
NASA Astrophysics Data System (ADS)
Naaman, O.; Strong, J. A.; Ferguson, D. G.; Egan, J.; Bailey, N.; Hinkey, R. T.
2017-02-01
We demonstrate Josephson junction based double-balanced mixer and phase shifter circuits operating at 6-10 GHz and integrate these components to implement both a monolithic amplitude/phase vector modulator and an I/Q quadrature mixer. The devices are actuated by flux signals, dissipate no power on chip, exhibit input saturation powers in excess of 1 nW, and provide cryogenic microwave modulation solutions for integrated control of superconducting qubits.
Park, Chul-Min; Ahn, Won-Ju; Jo, Woong-Kyu; Song, Jin-Hun; Oh, Chang-Yeop; Jeong, Young-Shin; Chung, Min-Chul; Park, Kwon-Pil; Kim, Ki-Joong; Jeong, Woon-Jo; Sohn, Bo-Kyun; Jung, Sang-Chul; Lee, Do-Jin; Ahn, Byeong-Kwon; Ahn, Ho-Geun
2015-01-01
The greenhouse effect of carbon dioxide (CO2) has been recognized as one of the most serious problems in the world. Conversion of CO2 to methyl alcohol (CH3OH) was studied using catalytic chemical methods. Honeycomb-typed monolith used as catalyst support was 400 cell/inch2. Pretreatment of the monolith surface was carried out by thermal treatment and acid treatment. Monolith-supported nanosized CuO-ZnO catalysts were prepared by wash-coat method. The prepared catalysts were characterized by using SEM, TEM, and XRD. The catalytic activity for CO2 hydrogenation to CH3OH was investigated using a flow-type reactor with varying reaction temperature, reaction pressure and contact time. Conversion of CO2 was increased with increasing reaction temperature, but selectivity to CH3OH was decreased. Optimum reaction temperature was about 250 degrees C under 20 atm. Because of the reverse water gas shift reaction.
A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem
Podhraški, Matija; Trontelj, Janez
2016-01-01
An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC) is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm. PMID:26999146
A Differential Monolithically Integrated Inductive Linear Displacement Measurement Microsystem.
Podhraški, Matija; Trontelj, Janez
2016-03-17
An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC) is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novelty of the presented system is its full integration, straightforward fabrication, and ease of application, requiring no external light or magnetic field source. Such systems therefore have the possibility of substituting certain conventional position encoder types. The microtransformers are excited by an AC signal in MHz range. The displacement information is modulated into the AC signal by a metal grating scale placed over the microsystem, employing a differential measurement principle. Homodyne mixing is used for the demodulation of the scale displacement information, returned by the ASIC as a DC signal in two quadrature channels allowing the determination of linear position of the target scale. The microsystem design, simulations, and characterization are presented. Various system operating conditions such as frequency, phase, target scale material and distance have been experimentally evaluated. The best results have been achieved at 4 MHz, demonstrating a linear resolution of 20 µm with steel and copper scale, having respective sensitivities of 0.71 V/mm and 0.99 V/mm.
Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback
NASA Astrophysics Data System (ADS)
Ristanic, Daniela; Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried
2015-01-01
A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm-1 at 1586 cm-1. The room temperature laser threshold current density is 3 kA/cm2 and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.
Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes.
Sadaf, S M; Ra, Y H; Szkopek, T; Mi, Z
2016-02-10
We have demonstrated for the first time an n(++)-GaN/Al/p(++)-GaN backward diode, wherein an epitaxial Al layer serves as the tunnel junction. The resulting p-contact free InGaN/GaN nanowire light-emitting diodes (LEDs) exhibited a low turn-on voltage (∼2.9 V), reduced resistance, and enhanced power, compared to nanowire LEDs without the use of Al tunnel junction or with the incorporation of an n(++)-GaN/p(++)-GaN tunnel junction. This unique Al tunnel junction overcomes some of the critical issues related to conventional GaN-based tunnel junction designs, including stress relaxation, wide depletion region, and light absorption, and holds tremendous promise for realizing low-resistivity, high-brightness III-nitride nanowire LEDs in the visible and deep ultraviolet spectral range. Moreover, the demonstration of monolithic integration of metal and semiconductor nanowire heterojunctions provides a seamless platform for realizing a broad range of multifunctional nanoscale electronic and photonic devices.
NASA Astrophysics Data System (ADS)
Tong, Xiaodong; Li, Qian; An, Ning; Wang, Wenjie; Deng, Xiaodong; Zhang, Liang; Liu, Haitao; Zeng, Jianping; Li, Zhiqiang; Tang, Hailing; Xiong, Yong-Zhong
2015-11-01
A planar Schottky barrier diode with the designed Schottky contact area of approximately 3 μm2 is developed on gallium arsenide (GaAs) material. The measurements of the developed planar Schottky barrier diode indicate that the zero-biased junction capacitance Cj0 is 11.0 fF, the parasitic series resistance RS is 3.0 Ω, and the cut off frequency fT is 4.8 THz. A monolithically integrated fourth subharmonic mixer with this diode operating at the radio frequency (RF) signal frequency of 0.34 THz with the chip area of 0.6 mm2 is implemented. The intermediate frequency (IF) bandwidth is from DC to 40 GHz. The local oscillator (LO) bandwidth is 37 GHz from 60 to 97 GHz. The RF bandwidth is determined by the bandwidth of the on chip antenna, which is 28 GHz from 322 to 350 GHz. The measurements of the mixer demonstrated a conversion loss of approximately 51 dB.
Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications
NASA Astrophysics Data System (ADS)
Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.
A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.
Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications
NASA Technical Reports Server (NTRS)
Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.
1986-01-01
A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.
Tests of monolithic active pixel sensors at national synchrotron light source
NASA Astrophysics Data System (ADS)
Deptuch, G.; Besson, A.; Carini, G. A.; Siddons, D. P.; Szelezniak, M.; Winter, M.
2007-01-01
The paper discusses basic characterization of Monolithic Active Pixel Sensors (MAPS) carried out at the X12A beam-line at National Synchrotron Light Source (NSLS), Upton, NY, USA. The tested device was a MIMOSA V (MV) chip, back-thinned down to the epitaxial layer. This 1M pixels device features a pixel size of 17×17 μm2 and was designed in a 0.6 μm CMOS process. The X-ray beam energies used range from 5 to 12 keV. Examples of direct X-ray imaging capabilities are presented.
Safety characteristics of the monolithic CFC divertor
NASA Astrophysics Data System (ADS)
Zucchetti, M.; Merola, M.; Matera, R.
1994-09-01
The main distinguishing feature of the monolithic CFC divertor is the use of a single material, a carbon fibre reinforced carbon, for the protective armour, the heat sink and the cooling channels. This removes joint interface problems which are one of the most important concerns related to the reference solutions of the ITER CDA divertor. An activation analysis of the different coolant options for this concept is presented. It turns out that neither short-term nor long-term activation are a concern for any coolants investigated. Therefore the proposed concept proves to be attractive from a safety stand-point also.
NASA Astrophysics Data System (ADS)
Hallibert, Pascal
2017-09-01
In recent years, a trend for higher resolution has increased the entrance apertures of future optical payloads for both Astronomy and Earth Observation most demanding applications, resulting in new opto-mechanical challenges for future systems based on either monolithic or segmented large primary mirrors. Whether easing feasibility and schedule impact of tight manufacturing and integration constraints or correcting mission-critical in-orbit and commissioning effects, Active Optics constitutes an enabling technology for future large optical space instruments at ESA and needs to reach the necessary maturity in time for future mission selection and implementation. We present here a complete updated overview of our current R and D activities in this field, ranging from deformable space-compatible components to full correction chains including wavefront sensing as well as control and correction algorithms. We share as well our perspectives on the way-forward to technological maturity and implementation within future missions.
Quad-channel beam switching WR3-band transmitter MMIC
NASA Astrophysics Data System (ADS)
Müller, Daniel; Eren, Gülesin; Wagner, Sandrine; Tessmann, Axel; Leuther, Arnulf; Zwick, Thomas; Kallfass, Ingmar
2017-05-01
Millimeter wave radar systems offer several advantages such as the combination of high resolution and the penetration of adverse atmosphere like smoke, dust or rain. This paper presents a monolithic millimeter wave integrated circuit (MMIC) transmitter which offers four channel beam steering capabilities and can be used as a radar or communication system transmitter. At the local oscillator input, in order to simplify packaging, a frequency tripler is used to multiply the 76.6 - 83.3 GHz input signal to the intended 230 - 250 GHz output frequency range. A resistive mixer is used for the conversion of the intermediate frequency signal into the RF domain. The actual beam steering network is realized using an active single pole quadruple throw (SP4T) switch, which is connected to a integrated Butler matrix. The MMIC was fabricated in a 35 nm InGaAs mHEMT process and has a size of 4.0 mm × 1.5 mm
Liu, Hanhui; Li, Mengping; Kaner, Richard B; Chen, Songyan; Pei, Qibing
2018-05-09
Owing to the need for portable and sustainable energy sources and the development trend for microminiaturization and multifunctionalization in the electronic components, the study of integrated self-charging power packs has attracted increasing attention. A new self-charging power pack consisting of a silicon nanowire array/poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hybrid solar cell and a laser-scribed graphene (LSG) supercapacitor has been fabricated. The Si nanowire array/PEDOT:PSS hybrid solar cell structure exhibited a high power conversion efficiency (PCE) of 12.37%. The LSG demonstrated excellent energy storage capability for the power pack, with high current density, energy density, and cyclic stability when compared to other supercapacitor electrodes such as active carbon and conducting polymers. The overall efficiency of the power unit is 2.92%.
NASA Technical Reports Server (NTRS)
Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)
2005-01-01
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Carretero-Genevrier, Adrian; Oro-Sole, Judith; Gazquez, Jaume
2013-12-13
We developed an original strategy to produce vertical epitaxial single crystalline manganese oxide octahedral molecular sieve (OMS) nanowires with tunable pore sizes and compositions on silicon substrates by using a chemical solution deposition approach. The nanowire growth mechanism involves the use of track-etched nanoporous polymer templates combined with the controlled growth of quartz thin films at the silicon surface, which allowed OMS nanowires to stabilize and crystallize. α-quartz thin films were obtained after thermal activated crystallization of the native amorphous silica surface layer assisted by Sr 2+- or Ba 2+-mediated heterogeneous catalysis in the air at 800 °C. These α-quartzmore » thin films work as a selective template for the epitaxial growth of randomly oriented vertical OMS nanowires. Furthermore, the combination of soft chemistry and epitaxial growth opens new opportunities for the effective integration of novel technological functional tunneled complex oxides nanomaterials on Si substrates.« less
Stellan Hjertén’s contribution to the development of monolithic stationary phases
Svec, Frantisek
2009-01-01
This overview is presented to celebrate birthday of one of the luminaries of the separation science and my friend – Stellan Hjertén. He made significant contributions to a variety of areas in the separation science such as electrophoresis, liquid chromatography, and capillary electrochromatography to name just a few. Since the scope of his work was enormous, this review will focus only on a single aspect of his scientific activities, design and applications of monolithic materials. During the years starting from 1989, Stellan Hjertén published many excellent papers concerning the preparation of acrylamide chemistry-based monoliths and their use in both micro-HPLC and capillary electrochromatography. The following text details his works in field. PMID:18383033
DOE Office of Scientific and Technical Information (OSTI.GOV)
Farma, R.; Awitdrus,; Taer, E.
Fibers of oil palm empty fruit bunches were used to produce self-adhesive carbon grains (SACG). The SACG green monoliths were carbonized in N{sub 2} environment at 800°C to produce carbon monoliths (CM) and the CM was CO{sub 2} activated at 800°C for 4 hour to produce activated carbon monolith electrodes (ACM). The physical properties of the CMs and ACMs were investigated using X-ray diffraction, field emission scanning electron microscopy and nitrogen adsorption-desorption. ACMs were used as electrode to fabricate symmetry supercapacitor cells and the cells which used H{sub 2}SO{sub 4} electrolyte at 0.5, 1.0 and 1.5 M were investigated usingmore » electrochemical impedance spectroscopy, cyclic voltammetry and galvanostatic charge-discharge standard techniques. In this paper we report the physical properties of the ACM electrodes and the effect of electrolyte concentration on the electrochemical properties the ACM electrodes.« less
A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit.
Chakrabarti, B; Lastras-Montaño, M A; Adam, G; Prezioso, M; Hoskins, B; Payvand, M; Madhavan, A; Ghofrani, A; Theogarajan, L; Cheng, K-T; Strukov, D B
2017-02-14
Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore's law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + "Molecular") architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.
A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit
Chakrabarti, B.; Lastras-Montaño, M. A.; Adam, G.; Prezioso, M.; Hoskins, B.; Cheng, K.-T.; Strukov, D. B.
2017-01-01
Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + “Molecular”) architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit. PMID:28195239
Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection
Hsu*, Shih-Hsiang
2010-01-01
To fully utilize GaAs high drift mobility, techniques to monolithically integrate In0.53Ga0.47As p-i-n photodetectors with GaAs based optical waveguides using total internal reflection coupling are reviewed. Metal coplanar waveguides, deposited on top of the polyimide layer for the photodetector’s planarization and passivation, were then uniquely connected as a bridge between the photonics and electronics to illustrate the high-speed monitoring function. The photodetectors were efficiently implemented and imposed on the echelle grating circle for wavelength division multiplexing monitoring. In optical filtering performance, the monolithically integrated photodetector channel spacing was 2 nm over the 1,520–1,550 nm wavelength range and the pass band was 1 nm at the −1 dB level. For high-speed applications the full-width half-maximum of the temporal response and 3-dB bandwidth for the reflectively coupled waveguide photodetectors were demonstrated to be 30 ps and 11 GHz, respectively. The bit error rate performance of this integrated photodetector at 10 Gbit/s with 27-1 long pseudo-random bit sequence non-return to zero input data also showed error-free operation. PMID:22163502
Emerging technologies in Si active photonics
NASA Astrophysics Data System (ADS)
Wang, Xiaoxin; Liu, Jifeng
2018-06-01
Silicon photonics for synergistic electronic–photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronicSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro–optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronic–photonic integration with performance inaccessible from conventional Si photonics technologies-photonic integration with performance inaccessible from conventional Si photonics technologies.
Ni, Zao; Yang, Chen; Xu, Dehui; Zhou, Hong; Zhou, Wei; Li, Tie; Xiong, Bin; Li, Xinxin
2013-01-01
We report a newly developed design/fabrication module with low-cost single-sided “low-stress-silicon-nitride (LS-SiN)/polysilicon (poly-Si)/Al” process for monolithic integration of composite sensors for sensing-network-node applications. A front-side surface-/bulk-micromachining process on a conventional Si-substrate is developed, featuring a multifunctional SiN/poly-Si/Al layer design for diverse sensing functions. The first “pressure + acceleration + temperature + infrared” (PATIR) composite sensor with the chip size of 2.5 mm × 2.5 mm is demonstrated. Systematic theoretical design and analysis methods are developed. The diverse sensing components include a piezoresistive absolute-pressure sensor (up to 700 kPa, with a sensitivity of 49 mV/MPa under 3.3 V supplied voltage), a piezoresistive accelerometer (±10 g, with a sensitivity of 66 μV/g under 3.3 V and a −3 dB bandwidth of 780 Hz), a thermoelectric infrared detector (with a responsivity of 45 V/W and detectivity of 3.6 × 107 cm·Hz1/2/W) and a thermistor (−25–120 °C). This design/fabrication module concept enables a low-cost monolithically-integrated “multifunctional-library” technique. It can be utilized as a customizable tool for versatile application-specific requirements, which is very useful for small-size, low-cost, large-scale sensing-network node developments. PMID:23325169
Integrated Multiple Device CMOS-MEMS IMU Systems and RF MEMS Applications
2002-12-17
microstructures [7]~[9]. The success of the surface-micromachined electrostatic micromotor in the late 80’s [10] stimulated the industry and government...processed electrostatic synchronous micromotors ,” Sensors Actuators, vol. 20, pp. 48-56, 1989. [11] “ADXL05-monolithic accelerometer with signal
SOI CMOS Imager with Suppression of Cross-Talk
NASA Technical Reports Server (NTRS)
Pain, Bedabrata; Zheng, Xingyu; Cunningham, Thomas J.; Seshadri, Suresh; Sun, Chao
2009-01-01
A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.
Rectenna Technology Program: Ultra light 2.45 GHz rectenna 20 GHz rectenna
NASA Technical Reports Server (NTRS)
Brown, William C.
1987-01-01
The program had two general objectives. The first objective was to develop the two plane rectenna format for space application at 2.45 GHz. The resultant foreplane was a thin-film, etched-circuit format fabricated from a laminate composed of 2 mil Kapton F sandwiched between sheets of 1 oz copper. The thin-film foreplane contains half wave dipoles, filter circuits, rectifying Schottky diode, and dc bussing lead. It weighs 160 grams per square meter. Efficiency and dc power output density were measured at 85% and 1 kw/sq m, respectively. Special testing techniques to measure temperature of circuit and diode without perturbing microwave operation using the fluoroptic thermometer were developed. A second objective was to investigate rectenna technology for use at 20 GHz and higher frequencies. Several fabrication formats including the thin-film scaled from 2.45 GHz, ceramic substrate and silk-screening, and monolithic were investigated, with the conclusion that the monolithic approach was the best. A preliminary design of the monolithic rectenna structure and the integrated Schottky diode were made.
Lin, Ling; Chen, Hui; Wei, Huibin; Wang, Feng; Lin, Jin-Ming
2011-10-21
A porous polymer monolithic column for solid-phase microextraction and chemiluminescence detection was integrated into a simple microfluidic chip for the extraction and determination of catechins in green tea. The porous polymer was prepared by poly(glycidyl methacrylate-co-ethylene dimethacrylate) and modified with ethylenediamine. Catechins can be concentrated in the porous polymer monolithic column and react with potassium permanganate to give chemiluminescence. The microfluidic chip is reusable with high sensitivity and very low reagent consumption. The on-line preconcentration and detection can be realized without an elution step. The enrichment factor was calculated to be about 20 for catechins. The relative chemiluminescence intensity increased linearly with concentration of catechin from 5.0 × 10(-9) to 1.0 × 10(-6) M and the limit of detection was 1.0 × 10(-9) M. The proposed method was applied to determine catechin in green tea. The recoveries are from 90% to 110% which benefits the actual application for green tea samples.
Photonic integrated transmitter and receiver for NG-PON2
NASA Astrophysics Data System (ADS)
Tavares, Ana; Lopes, Ana; Rodrigues, Cláudio; Mãocheia, Paulo; Mendes, Tiago; Brandão, Simão.; Rodrigues, Francisco; Ferreira, Ricardo; Teixeira, António
2014-08-01
In this paper the authors present a monolithic Photonic Integrated Circuit which includes a transmitter and a receiver for NG-PON2. With this layout it is possible to build an OLT and, by redesigning some filters, also an ONU. This technology allows reducing the losses in the transmitter and in the receiver, increasing power budget, and also reducing the OEO conversions, which has been a major problem that operators want to surpass.
NASA Technical Reports Server (NTRS)
1972-01-01
Guidelines for the design, development, and fabrication of electronic components and circuits for use in spacecraft construction are presented. The subjects discussed involve quality control procedures and test methodology for the following subjects: (1) monolithic integrated circuits, (2) hybrid integrated circuits, (3) transistors, (4) diodes, (5) tantalum capacitors, (6) electromechanical relays, (7) switches and circuit breakers, and (8) electronic packaging.
Kobayashi, Wataru; Arai, Masakazu; Fujisawa, Takeshi; Sato, Tomonari; Ito, Toshio; Hasebe, Koichi; Kanazawa, Shigeru; Ueda, Yuta; Yamanaka, Takayuki; Sanjoh, Hiroaki
2015-04-06
We propose a novel approach for simultaneously controlling the chirp and increasing the output power of an EADFB laser by monolithically integrating a short-cavity SOA. We achieved a 40-Gbit/s 5-km SMF transmission at a wavelength of 1.55 μm by using an EADFB SOA with a lower power consumption than a stand-alone EADFB laser.
Development of new dyes for use in integrated optical sensors.
Citterio, D; Rásonyi, S; Spichiger, U E
1996-03-01
New chromoionophores have been developed, focused on NIR applications so that optode membranes may be used in monolithically integrated optical sensors. The wavelength of maximum absorbance has been estimated for a new model compound by the Pariser-Parr-Pople (PPP) method. Several cyanine type dyes have been tested as membrane chromoionophores. Membrane composition has been altered to overcome solubility problems. In this way, simple pH-sensitive optode membranes have been produced.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Jing; Zhou, Meijuan; Tan, Guoqiang
2015-01-01
Silicon monoxide, a promising silicon-based anode candidate for lithium-ion batteries, has recently attracted much attention for its high theoretical capacity, good cycle stability, low cost, and environmental benignity. Currently, the most critical challenge is to improve its low initial coulombic efficiency and significant volume changes during the charge–discharge processes. Herein, we report a binder-free monolithic electrode structure based on directly encapsulating micro-nano Si/SiOx particles into conjugated nitrogen-doped carbon frameworks to form monolithic, multi-core, cross-linking composite matrices. We utilize micro-nano Si/SiOx reduced by high-energy ball-milling SiO as active materials, and conjugated nitrogen-doped carbon formed by the pyrolysis of polyacrylonitrile both asmore » binders and conductive agents. Owing to the high electrochemical activity of Si/SiOx and the good mechanical resiliency of conjugated nitrogen-doped carbon backbones, this specific composite structure enhances the utilization efficiency of SiO and accommodates its large volume expansion, as well as its good ionic and electronic conductivity. The annealed Si/SiOx/polyacrylonitrile composite electrode exhibits excellent electrochemical properties, including a high initial reversible capacity (2734 mA h g-1 with 75% coulombic efficiency), stable cycle performance (988 mA h g-1 after 100 cycles), and good rate capability (800 mA h g-1 at 1 A g-1 rate). Because the composite is naturally abundant and shows such excellent electrochemical performance, it is a promising anode candidate material for lithium-ion batteries. The binder-free monolithic architectural design also provides an effective way to prepare other monolithic electrode materials for advanced lithium-ion batteries.« less
Recent developments in electroabsorption modulators at Acreo Swedish ICT
NASA Astrophysics Data System (ADS)
Wang, Qin; Zhang, Andy Z.; Almqvist, Susanne; Junique, Stephane; Noharet, Bertrand; Platt, Duncan; Salter, Michael; Andersson, Jan Y.
2015-03-01
Three types of electroabsorption modulators (EAMs) based on III-V semiconductor multiple quantum wells (MQW) are presented in this work. One is a novel monolithic integration traveling-wave EAM for an analog optical transmitter/transceiver to achieve integrated photonic mm-wave functions for broadband connectivity. Another one is composed of an integrated EAM 1D array in a photonic beam-former as a Ku-band phased array antenna for seamless aeronautical networking through integration of data links, radios, and antennas. The third one addresses the use of MQW EAMs in free space optical links through biological tissue for transcutaneous communication.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu
2015-09-02
Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature andmore » current density compared to masks covering entire cells.« less
Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules
DOE Office of Scientific and Technical Information (OSTI.GOV)
Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu
2015-06-14
Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature andmore » current density compared to masks covering entire cells.« less
Advanced large scale GaAs monolithic IF switch matrix subsystem
NASA Technical Reports Server (NTRS)
Ch'en, D. R.; Petersen, W. C.; Kiba, W. M.
1992-01-01
Attention is given to a novel chip design and packaging technique to overcome the limitations due to the high signal isolation requirements of advanced communications systems. A hermetically sealed 6 x 6 monolithic GaAs switch matrix subsystem with integral control electronics based on this technique is presented. An 0-dB insertion loss and 60-dB crosspoint isolation over a 3.5-to-6-GHz band were achieved. The internal controller portion of the switching subsystem provides crosspoint control via a standard RS-232 computer interface and can be synchronized with an external systems control computer. The measured performance of this advanced switching subsystem is fully compatible with relatively static 'switchboard' as well as dynamic TDMA modes of operation.
Morphological analysis of GeTe in inline phase change switches
DOE Office of Scientific and Technical Information (OSTI.GOV)
King, Matthew R., E-mail: matthew.king2@ngc.com; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695; El-Hinnawy, Nabil
2015-09-07
Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined bymore » variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.« less
NASA Astrophysics Data System (ADS)
Bijlani, Bhavin J.
2011-07-01
This thesis explored the theory, design, fabrication and characterization of AlGaAs Bragg reflection waveguides (BRW) towards the goal of a platform for monolithic integration of active and optically nonlinear devices. Through integration of a diode laser and nonlinear phase-matched cavity, the possibility of on-chip nonlinear frequency generation was explored. Such integrated devices would be highly useful as a robust, alignment free, small footprint and electrically injected alternative to bulk optic systems. A theoretical framework for modal analysis of arbitrary 1-D photonic crystal defect waveguides is developed. This method relies on the transverse resonance condition. It is then demonstrated in the context of several types of Bragg reflection waveguides. The framework is then extended to phase-match second-order nonlinearities and incorporating quantum-wells for diode lasers. Experiments within a slab and ridge waveguide demonstrated phase-matched Type-I second harmonic generation at fundamental wavelength of 1587 and 1600 nm, respectively; a first for this type of waveguide. For the slab waveguide, conversion efficiency was 0.1 %/W. In the more strongly confined ridge waveguides, efficiency increased to 8.6 %/W owing to the increased intensity. The normalized conversion efficiency was estimated to be at 600 %/Wcm2. Diode lasers emitting at 980 nm in the BRW mode were also fabricated. Verification of the Bragg mode was performed through imaging the near- field of the mode. Propagation loss of this type of mode was measured directly for the first time at ≈ 14 cm-1. The lasers were found to be very insensitive with characteristic temperature at 215 K. Two designs incorporating both laser and phase-matched nonlinearity within the same cavity were fabricated, for degenerate and non-degenerate down-conversion. Though the lasers were sub-optimal, a parametric fluorescence signal was readily detected. Fluorescence power as high as 4 nW for the degenerate design and 5 nW for the non-degenerate design were detected. The conversion efficiency was 4176 %/Wcm2 and 874 %/Wcm2, respectively. Neither design was found to emit near the design wavelength. In general, the signal is between 1600-1800 nm and the idler is between 2200-2400 nm. Improvements in laser performance are expected to drastically increase the conversion efficiency.
Solid State Technology Branch of NASA Lewis Research Center: Fifth Annual Digest
NASA Technical Reports Server (NTRS)
1993-01-01
The digest is a collection of papers written by the members of the Solid State Technology Branch of NASA Lewis Research Center from June 1992-June 1993. The papers cover a range of topics relating to superconductivity, monolithic microwave integrated circuits (MMIC's), coplanar waveguide, and material characterization.
JPL HAMSR Takes Hurricane Matthew Temperature
2016-10-07
JPL's High-Altitude Monolithic Microwave Integrated Circuit Sounding Radiometer (HAMSR) instrument captured this look inside Hurricane Matthew's spiral clouds on Oct. 7, 2016, flying on a NASA Global Hawk unmanned aircraft. Red colors show cloud bands without precipitation; blues show rain bands. http://photojournal.jpl.nasa.gov/catalog/PIA21093
Towards Terahertz MMIC Amplifiers: Present Status and Trends
NASA Technical Reports Server (NTRS)
Samoska, Lorene
2006-01-01
This viewgraph presentation surveys the fastest Monolithic Millimeter-wave Integrated Circuit (MMIC) amplifiers to date; summarize previous solid state power amp results to date; reviews examples of MMICs, reviews Power vs. Gate periphery and frequency; Summarizes previous LNA results to date; reviews Noise figure results and trends toward higher frequency
Techniques of Final Preseal Visual Inspection
NASA Technical Reports Server (NTRS)
Anstead, R. J.
1975-01-01
A dissertation is given on the final preseal visual inspection of microcircuit devices to detect manufacturing defects and reduce failure rates in service. The processes employed in fabricating monolithic integrated circuits and hybrid microcircuits, various failure mechanisms resulting from deficiencies in those processes, and the rudiments of performing final inspection are outlined.
Reliability Prediction Models for Discrete Semiconductor Devices
1988-07-01
influence failure rate were device construction, semiconductor material, junction temperature, electrical stress, circuit application., a plication...found to influence failure rate were device construction, semiconductor material, junction temperature, electrical stress, circuit application...MFA Airbreathlng 14issile, Flight MFF Missile, Free Flight ML Missile, Launch MMIC Monolithic Microwave Integrated Circuits MOS Metal-Oxide
Lirio, Stephen; Fu, Chung-Wei; Lin, Jhih-Yun; Hsu, Meng-Ju; Huang, Hsi-Ya
2016-07-13
In this study, the application of different activated carbon-polymer (AC-polymer) monoliths as adsorbents for the solid-phase microextraction (SPME) of phthalate esters (PAEs) in water sample were investigated. The activated carbon (AC) was embedded in organic polymers, poly(butyl methacrylate-co-ethylene dimethacrylate) (poly(BMA-EDMA)) or poly(styrene-co-divinylbenzene) (poly(STY-DVB)), via a 5-min microwave-assisted or a 15-min water bath heating polymerization. Preliminary investigation on the performance of the native poly(BMA-EDMA) and poly(STY-DVB) demonstrated remarkable adsorption efficiencies for PAEs. However, due to the strong hydrophobic, π-π, and hydrogen bonding interactions between the analytes and polymers, low extraction recoveries were achieved. In contrast, the presence of AC in native polymers not only enhanced the adsorption efficiencies but also assisted the PAE desorption, especially for AC-poly(STY-DVB) with extraction recovery ranged of 76.2-99.3%. Under the optimized conditions, the extraction recoveries for intra-, inter-day and column-to-column were in the range of 76.5-100.8% (<3.7% RSDs), 77.2-97.6% (<5.6% RSDs) and 75.5-99.7% (<6.2% RSDs), respectively. The developed AC-poly(STY-DVB) monolithic column showed good mechanical stability, which can be reused for more than 30 extraction times without any significant loss in the extraction recoveries of PAEs. The AC-poly(STY-DVB) monolithic column was successfully applied in SPME of PAEs in water sample with extraction recovery ranged of 78.8%-104.6% (<5.5% RSDs). Copyright © 2016 Elsevier B.V. All rights reserved.
Integrated Photonic Comb Generation: Applications in Coherent Communication and Sensing
NASA Astrophysics Data System (ADS)
Parker, John S.
Integrated photonics combines many optical components including lasers, modulators, waveguides, and detectors in close proximity via homogeneous (monolithic) or heterogeneous (using multiple materials) integration. This improves stability for interferometers and lasers, reduces the occurrence of unwanted reflections, and it avoids coupling losses between different components as they are on the same chip. Thus, less power is needed to compensate for these added losses, and less heat needs to be removed due to these power savings. In addition, integration allows the many components that comprise a system to be fabricated together, thereby reducing the cost per system and allowing rapid scaling in production throughput. Integrated optical combs have many applications including: metrology, THz frequency generation, arbitrary waveform generation, optical clocks, photonic analog-to-digital converters, sensing (imaging), spectroscopy, and data communication. A comb is a set of optical sources evenly spaced in frequency. Several methods of comb generation including mode-locking and optical parametric oscillation produce phase-matched optical outputs with a fixed phase relationship between the frequency lines. When the absolute frequency of a single comb line is stabilized along with the frequency spacing between comb lines, absolute phase and frequency precision can be achieved over the entire comb bandwidth. This functionality provides tremendous benefits to many applications such as coherent communication and optical sensing. The goals for this work were achieving a broad comb bandwidth and noise reduction, i.e., frequency and phase stability. Integrated mode-locked lasers on the InGaAsP/InP material platform were chosen, as they could be monolithically integrated with the wide range of highly functional and versatile photonic integrated circuits (PICs) previously demonstrated on this platform at UCSB. Gain flattening filters were implemented to increase the comb bandwidths to 2.5 THz. Active mode-locking with an RF source was used to precisely set the frequency spacing between comb lines with better than 10 Hz accuracy. An integrated optical phase-locked loop (OPLL) for the comb was designed, built, and tested. The OPLL fixed a single comb line to a stable single linewidth laser, demonstrating a ˜430 Hz FWHM optical linewidth on the locked comb line and 20º RMS phase deviation between the comb and optical reference. The free-running linewidth is 50--100 MHz, demonstrating over 50 dB improvement in optical linewidth via locking. An integrated tunable laser (SG-DBR) with an OPLL was phase-locked to a comb source with a fixed offset frequency, thus showing the potential for using a comb with SG-DBRs as a compact frequency synthesizer.
Advancing the technology of monolithic CMOS detectors for use as x-ray imaging spectrometers
NASA Astrophysics Data System (ADS)
Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Amato, Stephen
2017-08-01
The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff has been engaged in a multi year effort to advance the technology of monolithic back-thinned CMOS detectors for use as X-ray imaging spectrometers. The long term goal of this campaign is to produce X-ray Active Pixel Sensor (APS) detectors with Fano limited performance over the 0.1-10keV band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Such devices would be ideal for candidate post 2020 decadal missions such as LYNX and for smaller more immediate applications such as CubeX. Devices from a recent fabrication have been back-thinned, packaged and tested for soft X-ray response. These devices have 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels with ˜135μV/electron sensitivity and a highly parallel signal chain. These new detectors are fabricated on 10μm epitaxial silicon and have a 1k by 1k format. We present details of our camera design and device performance with particular emphasis on those aspects of interest to single photon counting X-ray astronomy. These features include read noise, X-ray spectral response and quantum efficiency.
Carrasco-Correa, Enrique Javier; Ramis-Ramos, Guillermo; Herrero-Martínez, José Manuel
2013-07-12
Epinephrine-bonded polymeric monoliths for capillary electrochromatography (CEC) were developed by nucleophilic substitution reaction of epoxide groups of poly(glycidyl-methacrylate-co-ethylenedimethacrylate) (poly(GMA-co-EDMA)) monoliths using epinephrine as nucleophilic reagent. The ring opening reaction under dynamic conditions was optimized. Successful chemical modification of the monolith surface was ascertained by in situ Raman spectroscopy characterization. In addition, the amount of epinephrine groups that was bound to the monolith surface was evaluated by oxidation of the catechol groups with Ce(IV), followed by spectrophotometric measurement of unreacted Ce(IV). About 9% of all theoretical epoxide groups of the parent monolith were bonded to epinephrine. The chromatographic behavior of the epinephrine-bonded monolith in CEC conditions was assessed with test mixtures of alkyl benzenes, aniline derivatives and substituted phenols. In comparison to the poly(GMA-co-EDMA) monoliths, the epinephrine-bonded monoliths exhibited a much higher retention and slight differences in selectivity. The epinephrine-bonded monolith was further modified by oxidation with a Ce(IV) solution and compared with the epinephrine-bonded monoliths. The resulting monolithic stationary phases were evaluated in terms of reproducibility, giving RSD values below 9% in the parameters investigated. Copyright © 2013 Elsevier B.V. All rights reserved.
1991-09-01
nickel zinc ferrite films and (2) sputtering of barium hexaferrites with C-axis oriented normally to the film plane. The SSP tech- nique potential for...M-Wave, Components, Ferrites, Films , Yig, Nickel, Zinc , Hexagonal, R96E Measurements, Frequency, Magnetic, Barium Ferrite 17. SECURITY CLASSIFICATION...techniques to integrate millimeter-wave ferrite devices with GaAs VI&Cs. APPROACH Our approach was to deposit ferrite thin films on GaAs sub- strates in a
NASA Astrophysics Data System (ADS)
Passoni, Luca; Fumagalli, Francesco; Perego, Andrea; Bellani, Sebastiano; Mazzolini, Piero; Di Fonzo, Fabio
2017-06-01
Monolithic dye-sensitized solar cell (DSC) architectures hold great potential for building-integrated photovoltaics applications. They indeed benefit from lower weight and manufacturing costs as they avoid the use of a transparent conductive oxide (TCO)-coated glass counter electrode. In this work, a transparent monolithic DSC comprising a hierarchical 1D nanostructure stack is fabricated by physical vapor deposition techniques. The proof of concept device comprises hyperbranched TiO2 nanostructures, sensitized by the prototypical N719, as photoanode, a hierarchical nanoporous Al2O3 spacer, and a microporous indium tin oxide (ITO) top electrode. An overall 3.12% power conversion efficiency with 60% transmittance outside the dye absorption spectral window is demonstrated. The introduction of a porous TCO layer allows an efficient trade-off between transparency and power conversion. The porous ITO exhibits submicrometer voids and supports annealing temperatures above 400 °C without compromising its optoelectronical properties. After thermal annealing at 500 °C, the resistivity, mobility, and carrier concentration of the 800 nm-thick porous ITO layer are found to be respectively 2.3 × 10-3 Ω cm-1, 11 cm2 V-1 s-1, and 1.62 × 1020 cm-3, resulting in a series resistance in the complete device architecture of 45 Ω. Electrochemical impedance and intensity-modulated photocurrent/photovoltage spectroscopy give insight into the electronic charge dynamic within the hierarchical monolithic DSCs, paving the way for potential device architecture improvements.
A Digital Approach to Improved Overdentures for the Adolescent Oligodontia Patient.
Cooper, Lyndon F; Culp, Lee; Luedin, Nicole
2016-05-01
The use of overdentures for treatment of oligodontia in adolescent patients using conventional techniques has described limitations. The aim of the case report is to demonstrate the use of CAD (Computer Aided Design) CAM (Computer Aided Manufacture) technology to produce an esthetic monolithic polymethylmethacrylate prosthesis that is retentive and stable on insertion. Adolescent oligodontia patients are typically not suitable candidates for dental implant therapy. Overdentures provide interim or definitive restorative advantages. Given the important esthetic, psychological, and social functions of the prosthesis, an important therapeutic goal for the overdenture prosthesis is esthetics. A CAD-CAM approach to overdenture manufacture can provide a highly esthetic, strong, and retentive prosthesis. CAD-CAM manufacture of monolithic acrylic overdentures offer several advantages that include (1) improved planning and clinical communication, (2) high fidelity manufacture, (3) improved flexural strength, impact strength, and porosity, (4) improved prosthesis integrity and durability (due to the monolithic design), (5) CNC control of occlusal contacts, (6) high esthetic potential due to quality of bulk material and iterative design, and (7) archival nature of the digital prosthesis. CAD-CAM manufacture of monolithic overdentures is a viable approach to completing high value esthetic management of the adolescent oligodontia patient. This case report identifies a new way to utilize CAD CAM technology to produce an improved overdenture for the oligodontia patient. It will be of interest to many and underscores the fundamental principles of smile design transfer to the digital environment. (J Esthet Restor Dent, 2016). © 2016 Wiley Periodicals, Inc.
Passoni, Luca; Fumagalli, Francesco; Perego, Andrea; Bellani, Sebastiano; Mazzolini, Piero; Di Fonzo, Fabio
2017-06-16
Monolithic dye-sensitized solar cell (DSC) architectures hold great potential for building-integrated photovoltaics applications. They indeed benefit from lower weight and manufacturing costs as they avoid the use of a transparent conductive oxide (TCO)-coated glass counter electrode. In this work, a transparent monolithic DSC comprising a hierarchical 1D nanostructure stack is fabricated by physical vapor deposition techniques. The proof of concept device comprises hyperbranched TiO 2 nanostructures, sensitized by the prototypical N719, as photoanode, a hierarchical nanoporous Al 2 O 3 spacer, and a microporous indium tin oxide (ITO) top electrode. An overall 3.12% power conversion efficiency with 60% transmittance outside the dye absorption spectral window is demonstrated. The introduction of a porous TCO layer allows an efficient trade-off between transparency and power conversion. The porous ITO exhibits submicrometer voids and supports annealing temperatures above 400 °C without compromising its optoelectronical properties. After thermal annealing at 500 °C, the resistivity, mobility, and carrier concentration of the 800 nm-thick porous ITO layer are found to be respectively 2.3 × 10 -3 Ω cm -1 , 11 cm 2 V -1 s -1 , and 1.62 × 10 20 cm -3 , resulting in a series resistance in the complete device architecture of 45 Ω. Electrochemical impedance and intensity-modulated photocurrent/photovoltage spectroscopy give insight into the electronic charge dynamic within the hierarchical monolithic DSCs, paving the way for potential device architecture improvements.
DEVELOPMENT OF AN AFFINITY SILICA MONOLITH CONTAINING HUMAN SERUM ALBUMIN FOR CHIRAL SEPARATIONS
Mallik, Rangan; Hage, David S.
2008-01-01
An affinity monolith based on silica and containing immobilized human serum albumin (HSA) was developed and evaluated in terms of its binding, efficiency and selectivity in chiral separations. The results were compared with data obtained for the same protein when used as a chiral stationary phase with HPLC-grade silica particles or a monolith based on a copolymer of glycidyl methacrylate (GMA) and ethylene dimethacrylate (EDMA). The surface coverage of HSA in the silica monolith was similar to values obtained with silica particles and a GMA/EDMA monolith. However, the higher surface area of the silica monolith gave a material that contained 1.3- to 2.2-times more immobilized HSA per unit volume when compared to silica particles or a GMA/EDMA monolith. The retention, efficiency and resolving power of the HSA silica monolith were evaluated using two chiral analytes: D/L-tryptophan and R/S-warfarin. The separation of R- and S-ibuprofen was also considered. The HSA silica monolith gave higher retention and higher or comparable resolution and efficiency when compared with HSA columns that contained silica particles or a GMA/EDMA monolith. The silica monolith also gave lower back pressures and separation impedances than these other materials. It was concluded that silica monoliths can be valuable alternatives to silica particles or GMA/EDMA monoliths when used with immobilized HSA as a chiral stationary phase. PMID:17475436
A Microwave Photonic Interference Canceller: Architectures, Systems, and Integration
NASA Astrophysics Data System (ADS)
Chang, Matthew P.
This thesis is a comprehensive portfolio of work on a Microwave Photonic Self-Interference Canceller (MPC), a specialized optical system designed to eliminate interference from radio-frequency (RF) receivers. The novelty and value of the microwave photonic system lies in its ability to operate over bandwidths and frequencies that are orders of magnitude larger than what is possible using existing RF technology. The work begins, in 2012, with a discrete fiber-optic microwave photonic canceller, which prior work had demonstrated as a proof-of-concept, and culminates, in 2017, with the first ever monolithically integrated microwave photonic canceller. With an eye towards practical implementation, the thesis establishes novelty through three major project thrusts. (Fig. 1): (1) Extensive RF and system analysis to develop a full understanding of how, and through what mechanisms, MPCs affect an RF receiver. The first investigations of how a microwave photonic canceller performs in an actual wireless environment and a digital radio are also presented. (2) New architectures to improve the performance and functionality of MPCs, based on the analysis performed in Thrust 1. A novel balanced microwave photonic canceller architecture is developed and experimentally demonstrated. The balanced architecture shows significant improvements in link gain, noise figure, and dynamic range. Its main advantage is its ability to suppress common-mode noise and reduce noise figure by increasing the optical power. (3) Monolithic integration of the microwave photonic canceller into a photonic integrated circuit. This thrust presents the progression of integrating individual discrete devices into their semiconductor equivalent, as well as a full functional and RF analysis of the first ever integrated microwave photonic canceller.
Leinweber, Felix C; Tallarek, Ulrich
2003-07-18
Monolithic chromatographic support structures offer, as compared to the conventional particulate materials, a unique combination of high bed permeability, optimized solute transport to and from the active surface sites and a high loading capacity by the introduction of hierarchical order in the interconnected pore network and the possibility to independently manipulate the contributing sets of pores. While basic principles governing flow resistance, axial dispersion and adsorption capacity are remaining identical, and a similarity to particulate systems can be well recognized on that basis, a direct comparison of sphere geometry with monolithic structures is less obvious due, not least, to the complex shape of theskeleton domain. We present here a simple, widely applicable, phenomenological approach for treating single-phase incompressible flow through structures having a continuous, rigid solid phase. It relies on the determination of equivalent particle (sphere) dimensions which characterize the corresponding behaviour in a particulate, i.e. discontinuous bed. Equivalence is then obtained by dimensionless scaling of macroscopic fluid dynamical behaviour, hydraulic permeability and hydrodynamic dispersion in both types of materials, without needing a direct geometrical translation of their constituent units. Differences in adsorption capacity between particulate and monolithic stationary phases show that the silica-based monoliths with a bimodal pore size distribution provide, due to the high total porosity of the material of more than 90%, comparable maximum loading capacities with respect to random-close packings of completely porous spheres.
Wang, Yanqing; Fugetsu, Bunshi; Wang, Zhipeng; Gong, Wei; Sakata, Ichiro; Morimoto, Shingo; Hashimoto, Yoshio; Endo, Morinobu; Dresselhaus, Mildred; Terrones, Mauricio
2017-01-01
Nitrogen-doped porous activated carbon monoliths (NDP-ACMs) have long been the most desirable materials for supercapacitors. Unique to the conventional template based Lewis acid/base activation methods, herein, we report on a simple yet practicable novel approach to production of the three-dimensional NDP-ACMs (3D-NDP-ACMs). Polyacrylonitrile (PAN) contained carbon nanotubes (CNTs), being pre-dispersed into a tubular level of dispersions, were used as the starting material and the 3D-NDP-ACMs were obtained via a template-free process. First, a continuous mesoporous PAN/CNT based 3D monolith was established by using a template-free temperature-induced phase separation (TTPS). Second, a nitrogen-doped 3D-ACM with a surface area of 613.8 m2/g and a pore volume 0.366 cm3/g was obtained. A typical supercapacitor with our 3D-NDP-ACMs as the functioning electrodes gave a specific capacitance stabilized at 216 F/g even after 3000 cycles, demonstrating the advantageous performance of the PAN/CNT based 3D-NDP-ACMs. PMID:28074847
NASA Astrophysics Data System (ADS)
Wang, Yanqing; Fugetsu, Bunshi; Wang, Zhipeng; Gong, Wei; Sakata, Ichiro; Morimoto, Shingo; Hashimoto, Yoshio; Endo, Morinobu; Dresselhaus, Mildred; Terrones, Mauricio
2017-01-01
Nitrogen-doped porous activated carbon monoliths (NDP-ACMs) have long been the most desirable materials for supercapacitors. Unique to the conventional template based Lewis acid/base activation methods, herein, we report on a simple yet practicable novel approach to production of the three-dimensional NDP-ACMs (3D-NDP-ACMs). Polyacrylonitrile (PAN) contained carbon nanotubes (CNTs), being pre-dispersed into a tubular level of dispersions, were used as the starting material and the 3D-NDP-ACMs were obtained via a template-free process. First, a continuous mesoporous PAN/CNT based 3D monolith was established by using a template-free temperature-induced phase separation (TTPS). Second, a nitrogen-doped 3D-ACM with a surface area of 613.8 m2/g and a pore volume 0.366 cm3/g was obtained. A typical supercapacitor with our 3D-NDP-ACMs as the functioning electrodes gave a specific capacitance stabilized at 216 F/g even after 3000 cycles, demonstrating the advantageous performance of the PAN/CNT based 3D-NDP-ACMs.
Bimetallic Pt-Au Nanocatalysts on ZnO/Al2O3/Monolith for Air Pollution Control.
Kim, Ki-Joong; Ahn, Ho-Geun
2015-08-01
The catalytic activity of a monolithic catalyst with nanosized Pt and Au particles on ZnO/Al2O3 (Pt-Au/ZnO/Al2O3/M) prepared by a wash-coat method was examined, specifically for toluene oxidation. Scanning electron microscopy image showed clearly the formation of a ZnO/Al2O3 layer on the monolith. Nanosized Pt-Au particles on ZnO/Al2O3/M with different sizes could be found in the Pt-Au/ZnO/Al2O3/M catalyst. The conversion of toluene decreased with increasing toluene concentration and was also largely affected by the feed flow rate. The Pt-Au/ZnO/Al2O3/M catalysts prepared in this work have almost the same activity (molecules of toluene per second) compared with a powder Pt-Au/ZnO/Al2O3 catalyst with the same loadings of Pt and Au components; thus this catalyst could be used in controlling air pollution with very low concentrations and high flow rate.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ishak, M. M.; Deraman, M., E-mail: madra@ukm.my; Talib, I. A.
Self-adhesive carbon grains (SACG) was prepared from fibers of oil palm empty fruit bunches. The SACG green monoliths were carbonized in N{sub 2} environment at 400, 500, 600 and 700°C to produce carbon monoliths labeled as CM1, CM2, CM3 and CM4 respectively. The CMs were activated in CO{sub 2} surrounding at 800°C for 1 hour to produce activated carbon monolith electrodes (ACM1, ACM2, ACM3 and ACM4). The physical properties of the CMs and ACMs were investigated using X-ray diffraction, field emission scanning electron microscopy (FESEM) and N{sub 2} adsorption-desorption isotherm techniques. ACMs were used as electrode to fabricate symmetry supercapacitormore » cells and the cells’ performances were investigated using electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV) and galvanostatic charge-discharge (GCD) standard techniques. In this paper we report the physical and electrochemical properties of the ACM electrodes by analyzing the influence of the carbonization temperature on these properties.« less
Wang, Yanqing; Fugetsu, Bunshi; Wang, Zhipeng; Gong, Wei; Sakata, Ichiro; Morimoto, Shingo; Hashimoto, Yoshio; Endo, Morinobu; Dresselhaus, Mildred; Terrones, Mauricio
2017-01-11
Nitrogen-doped porous activated carbon monoliths (NDP-ACMs) have long been the most desirable materials for supercapacitors. Unique to the conventional template based Lewis acid/base activation methods, herein, we report on a simple yet practicable novel approach to production of the three-dimensional NDP-ACMs (3D-NDP-ACMs). Polyacrylonitrile (PAN) contained carbon nanotubes (CNTs), being pre-dispersed into a tubular level of dispersions, were used as the starting material and the 3D-NDP-ACMs were obtained via a template-free process. First, a continuous mesoporous PAN/CNT based 3D monolith was established by using a template-free temperature-induced phase separation (TTPS). Second, a nitrogen-doped 3D-ACM with a surface area of 613.8 m 2 /g and a pore volume 0.366 cm 3 /g was obtained. A typical supercapacitor with our 3D-NDP-ACMs as the functioning electrodes gave a specific capacitance stabilized at 216 F/g even after 3000 cycles, demonstrating the advantageous performance of the PAN/CNT based 3D-NDP-ACMs.
Compact, Single-Stage MMIC InP HEMT Amplifier
NASA Technical Reports Server (NTRS)
Pukala, David; Samoska, Lorene; Fung, King Man; Gaier, Todd; Deal, W. R.; Mei, Gerry; Radisic, Vesna; Lai, Richard
2008-01-01
A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.
2007-02-01
Dingle, Arthur C. Cassard, and Horst L. Stormer of Bell Telephone Laboratory. [50] In 1979, DiLorenzo and Wisseman reported that over 350 papers on...Arthur C.; and Stormer , Horst L., “High Mobility Multilayer Hetrojunction Devices Employing Modulated Doping,’’ U. S. Patent 4163237, issued 3 1 July
Negative feedback avalanche diode
NASA Technical Reports Server (NTRS)
Itzler, Mark Allen (Inventor)
2010-01-01
A single-photon avalanche detector is disclosed that is operable at wavelengths greater than 1000 nm and at operating speeds greater than 10 MHz. The single-photon avalanche detector comprises a thin-film resistor and avalanche photodiode that are monolithically integrated such that little or no additional capacitance is associated with the addition of the resistor.
Phased array-fed antenna configuration study: Technology assessment
NASA Technical Reports Server (NTRS)
Croswell, W. F.; Ball, D. E.; Taylor, R. C.
1983-01-01
Spacecraft array fed reflector antenna systems were assessed for particular application to a multiple fixed spot beam/multiple scanning spot beam system. Reflector optics systems are reviewed in addition to an investigation of the feasibility of the use of monolithic microwave integrated circuit power amplifiers and phase shifters in each element of the array feed.
MMIC Amplifier Produces Gain of 10 dB at 235 GHz
NASA Technical Reports Server (NTRS)
Dawson, Douglas; Fung, King Man; Lee, Karen; Samoska, Lorene; Wells, Mary; Gaier, Todd; Kangaslahti, Pekka; Grundbacher, Ronald; Lai, Richard; Raja, Rohit;
2007-01-01
The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier was fabricated as a monolithic microwave integrated-circuit (MMIC) chip containing InP high-electron-mobility transistors (HEMTs) of 0.07 micron gate length on a 50- m-thick InP substrate.
Monolithic optical link in silicon-on-insulator CMOS technology.
Dutta, Satadal; Agarwal, Vishal; Hueting, Raymond J E; Schmitz, Jurriaan; Annema, Anne-Johan
2017-03-06
This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n+p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.
Recent progress in design and hybridization of planar grating-based transceivers
NASA Astrophysics Data System (ADS)
Bidnyk, S.; Pearson, M.; Balakrishnan, A.; Gao, M.
2007-06-01
We report on recent progress in simulations, physical layout, fabrication and hybridization of planar grating-based transceivers for passive optical networks (PONs). Until recently, PON transceivers have been manufactured using bulk micro-optical components. Today, advancements in modeling and simulation techniques has made it possible to design complex elements in the same silica-on silicon PLC platform and create an alternative platform for manufacturing of bi-directional transceivers. In our chips we simulated an integrated chip that monolithically combined planar reflective gratings and cascaded Mach-Zehnder interferometers. We used a combination of the finite element method and beam propagation method to model cascaded interferometers with enhanced coupling coefficients. Our simulations show that low-diffraction order planar reflective gratings, designed for small incidence and reflection angles, possess the required dispersion strength to meet the PON specifications. Subsequently, we created structures for passive alignment and hybridized photodetectors and lasers. We believe that advancements in simulation of planar lightwave circuits with embedded planar reflective gratings will result in displacement of the thin-film filters (TFFs) technology in many applications that require a high degree of monolithic and hybrid integration.
NASA Astrophysics Data System (ADS)
Jiang, Shan; Liu, Shuihua
2004-04-01
Current optical communication systems are more and more relying on the advanced opto-electronic components. A series of revolutionary optical and optoelectronics components technology accounts for the fast progress and field deployment of high-capacity telecommunication and data-transmission systems. Since 1990s, the optical communication industry in China entered a high-speed development period and its wide deployment had already established the solid base for China information infrastructure. In this presentation, the main progress of optoelectronics components and technology in China are reviewed, which includes semiconductor laser diode/photo receiver, fiber optical amplifier, DWDM multiplexer/de-multiplexer, dispersion compensation components and all optical network node components, such as optical switch, OADM, tunable optical filters and variable optical attenuators, etc. Integration discrete components into monolithic/hybrid platform component is an inevitable choice for the consideration of performance, mass production and cost reduction. The current status and the future trends of OEIC and PIC components technology in China will also be discuss mainly on the monolithic integration DFB LD + EA modulator, and planar light-wave circuit (PLC) technology, etc.
Lan, Hsiao-Chin; Hsiao, Hsu-Liang; Chang, Chia-Chi; Hsu, Chih-Hung; Wang, Chih-Ming; Wu, Mount-Learn
2009-11-09
A monolithically integrated micro-optical element consisting of a diffractive optical element (DOE) and a silicon-based 45 degrees micro-reflector is experimentally demonstrated to facilitate the optical alignment of non-coplanar fiber-to-fiber coupling. The slanted 45 degrees reflector with a depth of 216 microm is fabricated on a (100) silicon wafer by anisotropic wet etching. The DOE with a diameter of 174.2 microm and a focal length of 150 microm is formed by means of dry etching. Such a compact device is suitable for the optical micro-system to deflect the incident light by 90 degrees and to focus it on the image plane simultaneously. The measured light pattern with a spot size of 15 microm has a good agreement with the simulated result of the elliptic-symmetry DOE with an off-axis design for eliminating the strongly astigmatic aberration. The coupling efficiency is enhanced over 10-folds of the case without a DOE on the 45 degrees micro-reflector. This device would facilitate the optical alignment of non-coplanar light coupling and further miniaturize the volume of microsystem.
Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ristanic, Daniela; Schwarz, Benedikt, E-mail: benedikt.schwarz@tuwien.ac.at; Reininger, Peter
A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm{sup −1} atmore » 1586 cm{sup −1}. The room temperature laser threshold current density is 3 kA∕cm{sup 2} and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.« less
Low-background performance of a monolithic InSb CCD array
NASA Technical Reports Server (NTRS)
Bregman, J. D.; Goebel, J. H.; Mccreight, C. R.; Matsumoto, T.
1982-01-01
A 20 element monolithic InSb charge coupled device (CCD) detector array was measured under low background conditions to assess its potential for orbital astronomical applications. At a temperature of 64 K, previous results for charge transfer efficiency (CTE) were reproduced, and a sensitivity of about 2 x 10 to the minus 15th power joules was measured. At 27 and 6 K, extended integration times were achieved, but CTE was substantially degraded. The noise was approximately 6000 charges, which was in excess of the level where statistical fluctuations from the illumination could be detected. A telescope demonstration was performed showing that the array sensitivity and difficulty of operation were not substantially different from laboratory levels. Ways in which the device could be improved for astronomical applications were discussed.
High frequency optical communications; Proceedings of the Meeting, Cambridge, MA, Sept. 23, 24, 1986
NASA Astrophysics Data System (ADS)
Ramer, O. Glenn; Sierak, Paul
Topics discussed in this volume include systems and applications, detectors, sources, and coherent communications. Papers are presented on RF fiber optic links for avionics applications, fiber optics and optoelectronics for radar and electronic warfare applications, symmetric coplanar electrodes for high-speed Ti:LiNbO3 devices, and surface wave electrooptic modulator. Attention is given to X-band RF fiber-optic links, fiber-optic links for microwave signal transmission, GaAs monolithic receiver and laser driver for GHz transmission rates, and monolithically integrable high-speed photodetectors. Additional papers are on irregular and chaotic behavior of semiconductor lasers under modulation, high-frequency laser package for microwave optical communications, receiver modeling for coherent light wave communications, and polarization sensors and controllers for coherent optical communication systems.
NASA Astrophysics Data System (ADS)
Jung, Heon; Yoon, Wang Lai; Lee, Hotae; Park, Jong Soo; Shin, Jang Sik; La, Howon; Lee, Jong Dae
A palladium-washcoated metallic monolith catalyst is applied to the partial oxidation of methane to syngas. This catalyst is highly active at a gas hourly space velocity (GHSV) of 100,000 h -1. The compact partial oxidation (POX) reactor equipped with both 96 cc of the metallic monolith catalyst and an electrically-heated catalyst (EHC) has a start-up time of less than 1.5 min and a syngas generation capacity of 9.5 Nm 3 h -1. The POX reaction is sustained without the need for an external heater. With the stand-alone POX reactor, the methane conversion can be increased either by preheating the reactant mixture heat-exchanged with the product gas, or by supplying a larger amount of oxygen than is necessary for the reaction stoichiometry.
3D-ICs created using oblique processing
NASA Astrophysics Data System (ADS)
Burckel, D. Bruce
2016-03-01
This paper demonstrates that another class of three-dimensional integrated circuits (3D-ICs) exists, distinct from through silicon via centric and monolithic 3D-ICs. Furthermore, it is possible to create devices that are 3D at the device level (i.e. with active channels oriented in each of the three coordinate axes), by performing standard CMOS fabrication operations at an angle with respect to the wafer surface into high aspect ratio silicon substrates using membrane projection lithography (MPL). MPL requires only minimal fixturing changes to standard CMOS equipment, and no change to current state-of-the-art lithography. Eliminating the constraint of 2D planar device architecture enables a wide range of new interconnect topologies which could help reduce interconnect resistance/capacitance, and potentially improve performance.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gauthier, J.-P.; Almosni, S.; Léger, Y.
We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.
Huys, Roeland; Braeken, Dries; Jans, Danny; Stassen, Andim; Collaert, Nadine; Wouters, Jan; Loo, Josine; Severi, Simone; Vleugels, Frank; Callewaert, Geert; Verstreken, Kris; Bartic, Carmen; Eberle, Wolfgang
2012-04-07
To cope with the growing needs in research towards the understanding of cellular function and network dynamics, advanced micro-electrode arrays (MEAs) based on integrated complementary metal oxide semiconductor (CMOS) circuits have been increasingly reported. Although such arrays contain a large number of sensors for recording and/or stimulation, the size of the electrodes on these chips are often larger than a typical mammalian cell. Therefore, true single-cell recording and stimulation remains challenging. Single-cell resolution can be obtained by decreasing the size of the electrodes, which inherently increases the characteristic impedance and noise. Here, we present an array of 16,384 active sensors monolithically integrated on chip, realized in 0.18 μm CMOS technology for recording and stimulation of individual cells. Successful recording of electrical activity of cardiac cells with the chip, validated with intracellular whole-cell patch clamp recordings are presented, illustrating single-cell readout capability. Further, by applying a single-electrode stimulation protocol, we could pace individual cardiac cells, demonstrating single-cell addressability. This novel electrode array could help pave the way towards solving complex interactions of mammalian cellular networks. This journal is © The Royal Society of Chemistry 2012
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hong, Young Joon; Lee, Chul -Ho; Yoo, Jinkyoung
Integration of nanostructure lighting source arrays with well-defined emission wavelengths is of great importance for optoelectronic integrated monolithic circuitry. We report on the fabrication and optical properties of GaN-based p–n junction multishell nanotube microarrays with composition-modulated nonpolar m-plane In xGa 1–xN/GaN multiple quantum wells (MQWs) integrated on c-sapphire or Si substrates. The emission wavelengths were controlled in the visible spectral range of green to violet by varying the indium mole fraction of the In xGa 1–xN MQWs in the range 0.13 ≤ x ≤ 0.36. Homogeneous emission from the entire area of the nanotube LED arrays was achieved via themore » formation of MQWs with uniform QW widths and composition by heteroepitaxy on the well-ordered nanotube arrays. Importantly, the wavelength-invariant electroluminescence emission was observed above a turn-on of 3.0 V because both the quantum-confinement Stark effect and band filling were suppressed due to the lack of spontaneous inherent electric field in the m-plane nanotube nonpolar MQWs. Lastly, the method of fabricating the multishell nanotube LED microarrays with controlled emission colors has potential applications in monolithic nonpolar photonic and optoelectronic devices on commonly used c-sapphire and Si substrates.« less
NASA Astrophysics Data System (ADS)
Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei
2017-12-01
InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. Gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing module size are important challenges for the design of such detector system. Here we present for the first time an InGaAs/InP SPD with 1.25 GHz sine wave gating using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15 mm * 15 mm and implements the miniaturization of avalanche extraction for high-frequency sine wave gating. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of MIRC, and the SPD exhibits excellent performance with 27.5 % photon detection efficiency, 1.2 kcps dark count rate, and 9.1 % afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.
Frontend Receiver Electronics for High Frequency Monolithic CMUT-on-CMOS Imaging Arrays
Gurun, Gokce; Hasler, Paul; Degertekin, F. Levent
2012-01-01
This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for high-frequency intravascular ultrasound imaging. A custom 8-inch wafer is fabricated in a 0.35 μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulse-echo measurement. Transducer noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 MHz to 20 MHz. PMID:21859585
Front-end receiver electronics for high-frequency monolithic CMUT-on-CMOS imaging arrays.
Gurun, Gokce; Hasler, Paul; Degertekin, F
2011-08-01
This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for highfrequency intravascular ultrasound imaging. A custom 8-inch (20-cm) wafer is fabricated in a 0.35-μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range, and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input-referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulseecho measurement. Transducer-noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 to 20 MHz.
NASA Astrophysics Data System (ADS)
Ren, Yundong; Zhang, Rui; Ti, Chaoyang; Liu, Yuxiang
2016-09-01
Tapered optical fibers can deliver guided light into and carry light out of micro/nanoscale systems with low loss and high spatial resolution, which makes them ideal tools in integrated photonics and microfluidics. Special geometries of tapered fibers are desired for probing monolithic devices in plane as well as optical manipulation of micro particles in fluids. However, for many specially shaped tapered fibers, it remains a challenge to fabricate them in a straightforward, controllable, and repeatable way. In this work, we fabricated and characterized two special geometries of tapered optical fibers, namely fiber loops and helices, that could be switched between one and the other. The fiber loops in this work are distinct from previous ones in terms of their superior mechanical stability and high optical quality factors in air, thanks to a post-annealing process. We experimentally measured an intrinsic optical quality factor of 32,500 and a finesse of 137 from a fiber loop. A fiber helix was used to characterize a monolithic cavity optomechanical device. Moreover, a microfluidic "roller coaster" was demonstrated, where microscale particles in water were optically trapped and transported by a fiber helix. Tapered fiber loops and helices can find various applications ranging from on-the-fly characterization of integrated photonic devices to particle manipulation and sorting in microfluidics.
NASA Astrophysics Data System (ADS)
Kim, D.; Aglieri Rinella, G.; Cavicchioli, C.; Chanlek, N.; Collu, A.; Degerli, Y.; Dorokhov, A.; Flouzat, C.; Gajanana, D.; Gao, C.; Guilloux, F.; Hillemanns, H.; Hristozkov, S.; Junique, A.; Keil, M.; Kofarago, M.; Kugathasan, T.; Kwon, Y.; Lattuca, A.; Mager, M.; Sielewicz, K. M.; Marin Tobon, C. A.; Marras, D.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Pham, T. H.; Puggioni, C.; Reidt, F.; Riedler, P.; Rousset, J.; Siddhanta, S.; Snoeys, W.; Song, M.; Usai, G.; Van Hoorne, J. W.; Yang, P.
2016-02-01
ALICE plans to replace its Inner Tracking System during the second long shut down of the LHC in 2019 with a new 10 m2 tracker constructed entirely with monolithic active pixel sensors. The TowerJazz 180 nm CMOS imaging Sensor process has been selected to produce the sensor as it offers a deep pwell allowing full CMOS in-pixel circuitry and different starting materials. First full-scale prototypes have been fabricated and tested. Radiation tolerance has also been verified. In this paper the development of the charge sensitive front end and in particular its optimization for uniformity of charge threshold and time response will be presented.
NASA Astrophysics Data System (ADS)
Carbonnier, Benjamin; Guerrouache, Mohamed
Development of miniaturized separation and detection media represents one of the major challenges in the field of modern analytical chemistry dedicated to space exploration. To date, gas chromatography-mass spectrometry has been selected as the method of choice for exobiology flight experiments for seeking for organic molecules and especially potential chemical indicators of life. [1] Liquid phase separation methods have also been developed with for instance, the so-called Mars Organic Analyzer (MOA) capillary electrophoresis (CE) microchip.[2] Although CE offers the advantages of easy miniaturization and high separation efficiency it suffers from a lack of selectivity towards a broad range of analytes with varied chemical nature. In this respect, we propose the use of capillary columns filled with monolithic stationary phases for the electrochromatographic separation of organic molecules of exobiology interest. Polymer monoliths have attracted a great deal of interest in analytical science over the last years as (electro)chromatographic stationary phases [3], immunosensors [4]. Beyond the intrinsic properties of monolithic polymers, i.e. fast mass transport between the monolithic support and the surrounding fluid and high permeability, other major advantages are their easy in situ preparation and tuning of surface functionality. Indeed, monoliths can be simply prepared through free radical copolymerization of a homogeneous mixture made of monomers, cross-linkers, porogenic solvents and initiator. UV-initiation process has been exploited to the synthesis of a discrete section of monolith as a flow-through active element within the confines of micro channels [5,6] while two-step strategies have been reported for the design of varied adsorbent starting with a generic monolith [7,8]. Although a nearly limitless range of monolithic supports can be prepared by this traditional method, the resulting monoliths exhibit unique function. In this contribution, we describe an elegant strategy for preparing multifunctional monoliths through spatially controlled surface functionalization.[9] Photochemical initiation affords spatial control over the reaction site, i.e. site-specific immobilization of ligands on the pore surface of the monolith. Hydrophobic and hydrophilic molecular entities were successfully grafted and the obtained monoliths were applied to electrochromatographic separation application under reversed-phase and hydrophilic interaction electrochromatography modes, respectively. The panel of successfully analyzed analytes ranges from hydrophobic polycyclic aromatic hydrocarbons to life markers such as amino acids and peptides. Our approach was extended to the local design of chelating interface for the site-specific immobilisation of gold nanoparticles. Taking advantage of the unique properties of supported nano-gold, it was possible to perform surface enhanced Raman spectroscopy (SERS) sensing of organic molecules at the sub-nanomolar level. This work is funded by the French Space Agency (CNES) References [1] M.C. Pietrogrande, M.G. Zampolli, F. Dondi, C. Szopa, R. Sternberg, A. Buch, J.F. Raulin, J. Chromatogr. A 1071 (2005) 255. [2] A. M. Stockton, T.M. Chiesl, J.M. Scherer, R. A. Mathies, Anal. Chem. 81 (2009) 790 [3] B. Carbonnier, M. Guerrouache, R. Denoyel, M. C. Millot, J. Sep. Sci. 30 (2007) 3000. [4] J.k. Liu, C.F. Chen, C.W. Chang, D.L. DeVoe, Biosensors Bioelectron. 26 (2010) 182. [5] J. Krenkova, F. Svec, J. Sep. Sci. 32 (2009) 706. [6] F. Svec, J. Chromatogr. B 841 (2004) 52 [7] M. Guerrouache, M. C. Millot, B. Carbonnier, Macromol. Rapid. Commun, 30 (2009) 109. [8] M. Guerrouache, B. Carbonnier, C. Vidal-Madjar, M.C. Millot, J. Chromatogr A, 1149 (2007) 368. [9] M. Guerrouache, S. Mahouche Chergui, M.M. Chehimi, B. Carbonnier. Chem. Commun. 48 (2012) 7486.
A poly(vinyl alcohol)/sodium alginate blend monolith with nanoscale porous structure
2013-01-01
A stimuli-responsive poly(vinyl alcohol) (PVA)/sodium alginate (SA) blend monolith with nanoscale porous (mesoporous) structure is successfully fabricated by thermally impacted non-solvent induced phase separation (TINIPS) method. The PVA/SA blend monolith with different SA contents is conveniently fabricated in an aqueous methanol without any templates. The solvent suitable for the fabrication of the present blend monolith by TINIPS is different with that of the PVA monolith. The nanostructural control of the blend monolith is readily achieved by optimizing the fabrication conditions. Brunauer Emmett Teller measurement shows that the obtained blend monolith has a large surface area. Pore size distribution plot for the blend monolith obtained by the non-local density functional theory method reveals the existence of the nanoscale porous structure. Fourier transform infrared analysis reveals the strong interactions between PVA and SA. The pH-responsive property of the blend monolith is investigated on the basis of swelling ratio in different pH solutions. The present blend monolith of biocompatible and biodegradable PVA and SA with nanoscale porous structure has large potential for applications in biomedical and environmental fields. PMID:24093494
A poly(vinyl alcohol)/sodium alginate blend monolith with nanoscale porous structure.
Sun, Xiaoxia; Uyama, Hiroshi
2013-10-04
A stimuli-responsive poly(vinyl alcohol) (PVA)/sodium alginate (SA) blend monolith with nanoscale porous (mesoporous) structure is successfully fabricated by thermally impacted non-solvent induced phase separation (TINIPS) method. The PVA/SA blend monolith with different SA contents is conveniently fabricated in an aqueous methanol without any templates. The solvent suitable for the fabrication of the present blend monolith by TINIPS is different with that of the PVA monolith. The nanostructural control of the blend monolith is readily achieved by optimizing the fabrication conditions. Brunauer Emmett Teller measurement shows that the obtained blend monolith has a large surface area. Pore size distribution plot for the blend monolith obtained by the non-local density functional theory method reveals the existence of the nanoscale porous structure. Fourier transform infrared analysis reveals the strong interactions between PVA and SA. The pH-responsive property of the blend monolith is investigated on the basis of swelling ratio in different pH solutions. The present blend monolith of biocompatible and biodegradable PVA and SA with nanoscale porous structure has large potential for applications in biomedical and environmental fields.
NASA Astrophysics Data System (ADS)
Jin, L.; Hamilton, S. K.; Walter, L. M.
2004-12-01
Hydrologic processes control the residence time of water in the soil column. This is of central importance in understanding mineral weathering rates in terms of reaction kinetics and solute transport. In order to better quantify the coupling between water and solute mass transport and to better define controls on carbonate and aluminosilicates weathering rates, we have conducted bromide-tracer introduction experiments at four replicate soil monoliths (4 m3 volume) instrumented and managed by the KBS-LTER. Monolith soils are developed on the pitted outwash plain of the morainic system left by the last retreat of the Wisconsin glaciation, around 12,000 years ago. Soil profiles from the monolith sections extend to 200 cm and they were sampled and characterized texturally and mineralogically. Quartz and feldspar are dominant throughout the soil profile, while carbonates and hornblende occur only in deeper soil horizons. The four replicate monoliths are instrumented with gas and soil water sampling devices (Prenart tension lysimeters) at various depths. The monoliths also have a large capacity tray at the bottom, which permits collection of water for weight and chemical determinations. A bromide tracer solution (as lithium bromide) was applied to coincide as closely as possible with a major snowmelt event (2/27/04). The saturated and unsaturated transport of bromide through the four monoliths was followed as a function of time and soil profile depth for the duration of the snowmelt as well as intermittent rain events. Because the soil was saturated at the time of bromide application, the bromide solution is expected to move rapidly through macropores, followed by slower movement into micropores. The unsaturated transport of bromide is largely controlled by the intensity and duration of the rains if it is dominated by piston flow as opposed to preferential channel flow. In general, the tracer moved through the shallow soils very quickly, which is shown by early sharp peaks in bromide concentrations. Transport of bromide into deeper soil horizons, however, differs markedly among the four monoliths. Even within a given monolith, waters sampled at the same depth by different tension lysimeters show a very different pattern of bromide transport over time with some lyimeters suggesting piston flow, while others in the same monolith suggest preferential channel flow. These differences are likely driven by heterogeneous soil textures. The water recovered from the monolith trays over the first three months of the study period is between 80 and 90 percent of the total precipitation recorded at the LTER site. This recovery is reasonable given the fact that temperature was low and crops were not yet actively growing. The recovery of bromide is different among the monoliths and in general is less than 50 percent, which means more than 50 percent of tracer is still in the soils even after three months. Residence time of water has been calculated after some assumptions on the breakthrough curve. The water mass transport constraints imposed by the bromide tracer study will be utilized in concert with additional data on soil water geochemistry.
Wideband bandpass filters employing broadside-coupled microstrip lines for MIC and MMIC applications
NASA Technical Reports Server (NTRS)
Tran, M.; Nguyen, C.
1994-01-01
Wideband bandpass filters employing half-wavelength broadside-coupled microstrip lines suitable for microwave and mm-wave integrated monolithic integrated circuits (MIC and MMIC) are presented. Several filters have been developed at X-band (8 to 12 GHz) with 1 dB insertion loss. Fair agreement between the measured and calculated results has been observed. The analysis of the broadside-coupled microstrip lines used in the filters, based on the quasi-static spectral domain technique, is also described.
Organic membrane photonic integrated circuits (OMPICs).
Amemiya, Tomohiro; Kanazawa, Toru; Hiratani, Takuo; Inoue, Daisuke; Gu, Zhichen; Yamasaki, Satoshi; Urakami, Tatsuhiro; Arai, Shigehisa
2017-08-07
We propose the concept of organic membrane photonic integrated circuits (OMPICs), which incorporate various functions needed for optical signal processing into a flexible organic membrane. We describe the structure of several devices used within the proposed OMPICs (e.g., transmission lines, I/O couplers, phase shifters, photodetectors, modulators), and theoretically investigate their characteristics. We then present a method of fabricating the photonic devices monolithically in an organic membrane and demonstrate the operation of transmission lines and I/O couplers, the most basic elements of OMPICs.
SiGe/Si Monolithically Integrated Amplifier Circuits
NASA Technical Reports Server (NTRS)
Katehi, Linda P. B.; Bhattacharya, Pallab
1998-01-01
With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.
An integrated circuit floating point accumulator
NASA Technical Reports Server (NTRS)
Goldsmith, T. C.
1977-01-01
Goddard Space Flight Center has developed a large scale integrated circuit (type 623) which can perform pulse counting, storage, floating point compression, and serial transmission, using a single monolithic device. Counts of 27 or 19 bits can be converted to transmitted values of 12 or 8 bits respectively. Use of the 623 has resulted in substantial savaings in weight, volume, and dollar resources on at least 11 scientific instruments to be flown on 4 NASA spacecraft. The design, construction, and application of the 623 are described.
NASA Astrophysics Data System (ADS)
Porcel, Marco A. G.; Artundo, Iñigo; Domenech, J. David; Geuzebroek, Douwe; Sunarto, Rino; Hoofman, Romano
2018-04-01
This tutorial aims to provide a general overview on the state-of-the-art of photonic integrated circuits (PICs) in the visible and short near-infrared (NIR) wavelength ranges, mostly focusing in silicon nitride (SiN) substrates, and a guide to the necessary steps in the design toward the fabrication of such PICs. The focus is put on bio- and life sciences, given the adequacy and, thus, a large number of applications in this field.
Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.
2013-01-15
An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
NASA Technical Reports Server (NTRS)
Howard, Joseph M.; Ha, Kong Q.
2004-01-01
This is part two of a series on the optical modeling activities for JWST. Starting with the linear optical model discussed in part one, we develop centroid and wavefront error sensitivities for the special case of a segmented optical system such as JWST, where the primary mirror consists of 18 individual segments. Our approach extends standard sensitivity matrix methods used for systems consisting of monolithic optics, where the image motion is approximated by averaging ray coordinates at the image and residual wavefront error is determined with global tip/tilt removed. We develop an exact formulation using the linear optical model, and extend it to cover multiple field points for performance prediction at each instrument aboard JWST. This optical model is then driven by thermal and dynamic structural perturbations in an integrated modeling environment. Results are presented.
Ka-band MMIC subarray technology program (Ka-Mist)
NASA Technical Reports Server (NTRS)
Pottenger, Warren
1995-01-01
The broad objective of this program was to demonstrate a proof of concept insertion of Monolithic Microwave Integrated Circuit (MMIC) device technology into an innovative (tile architecture) active phased array antenna application supporting advanced EHF communication systems. Ka-band MMIC arrays have long been considered as having high potential for increasing the capability of space, aircraft, and land mobile communication systems in terms of scan performance, data rate, link margin, and flexibility while offering a significant reduction in size, weight, and power consumption. Insertion of MMIC technology into antenna systems, particularly at millimeter wave frequencies using low power and low noise amplifiers in close proximity to the radiating elements, offers a significant improvement in the array transmit efficiency, receive system noise figure, and overall array reliability. Application of active array technology also leads to the use of advanced beamforming techniques that can improve beam agility, diversity, and adaptivity to complex signal environments.
Facile fabrication of mesoporous poly(ethylene-co-vinyl alcohol)/chitosan blend monoliths.
Wang, Guowei; Xin, Yuanrong; Uyama, Hiroshi
2015-11-05
Poly(ethylene-co-vinyl alcohol) (EVOH)/chitosan blend monoliths were fabricated by thermally-induced phase separation method. Chitosan was successfully incorporated into the polymeric monolith by selecting EVOH as the main component of the monolith. SEM images exhibit that the chitosan was located on the inner surface of the monolith. Fourier-transform infrared analysis and elemental analysis indicate the successful blend of EVOH and chitosan. BET results show that the blend monoliths had high specific surface area and uniform mesopore structure. Good adsorption ability toward various heavy metal ions was found in the blend monoliths due to the large chelation capacity of chitosan. The blend monoliths have potential application for waste water purification or bio-related applications. Copyright © 2015 Elsevier Ltd. All rights reserved.
Integrated infrared detector arrays for low-background applications
NASA Technical Reports Server (NTRS)
Mccreight, C. R.; Goebel, J. H.
1982-01-01
Advanced infrared detector and detector array technology is being developed and characterized for future NASA space astronomy applications. Si:Bi charge-injection-device arrays have been obtained, and low-background sensitivities comparable to that of good discrete detectors have been measured. Intrinsic arrays are being assessed, and laboratory and telescope data have been collected on a monolithic InSb CCD array. For wavelengths longer than 30 microns, improved Ge:Ga detectors have been produced, and steps have been taken to prove the feasibility of an integrated extrinsic germanium array. Other integrated arrays and cryogenic components are also under investigation.
Synchronous OEIC Integrating Receiver for Optically Reconfigurable Gate Arrays.
Sánchez-Azqueta, Carlos; Goll, Bernhard; Celma, Santiago; Zimmermann, Horst
2016-05-25
A monolithically integrated optoelectronic receiver with a low-capacitance on-chip pin photodiode is presented. The receiver is fabricated in a 0.35 μm opto-CMOS process fed at 3.3 V and due to the highly effective integrated pin photodiode it operates at μW. A regenerative latch acting as a sense amplifier leads in addition to a low electrical power consumption. At 400 Mbit/s, sensitivities of -26.0 dBm and -25.5 dBm are achieved, respectively, for λ = 635 nm and λ = 675 nm (BER = 10(-9) ) with an energy efficiency of 2 pJ/bit.
Surface modified aerogel monoliths
NASA Technical Reports Server (NTRS)
Leventis, Nicholas (Inventor); Johnston, James C. (Inventor); Kuczmarski, Maria A. (Inventor); Meador, Mary Ann B. (Inventor)
2013-01-01
This invention comprises reinforced aerogel monoliths such as silica aerogels having a polymer coating on its outer geometric surface boundary, and to the method of preparing said aerogel monoliths. The polymer coatings on the aerogel monoliths are derived from polymer precursors selected from the group consisting of isocyanates as a precursor, precursors of epoxies, and precursors of polyimides. The coated aerogel monoliths can be modified further by encapsulating the aerogel with the polymer precursor reinforced with fibers such as carbon or glass fibers to obtain mechanically reinforced composite encapsulated aerogel monoliths.
Hu, Peidong; Long, Mingce; Bai, Xue; Wang, Cheng; Cai, Caiyun; Fu, Jiajun; Zhou, Baoxue; Zhou, Yongfeng
2017-06-15
As an emerging carbonaceous material, carbon aerogels (CAs) display a great potential in environmental cleanup. In this study, a macroscopic three-dimensional monolithic cobalt-doped carbon aerogel was developed by co-condensation of graphene oxide sheets and resorcinol-formaldehyde resin in the presence of cobalt ions, followed by lyophilization, carbonization and thermal treatment in air. Cobalt ions were introduced as a polymerization catalyst to bridge the organogel framework, and finally cobalt species were retained as both metallic cobalt and Co 3 O 4 , wrapped by graphitized carbon layers. The material obtained after a thermal treatment in air (CoCA-A) possesses larger BET specific surface area and pore volume, better hydrophilicity and lower leaching of cobalt ions than that without the post-treatment (CoCA). Despite of a lower loading of cobalt content and a larger mass transfer resistance than traditional powder catalysts, CoCA-A can efficiently eliminate organic contaminants by activation of peroxymonosulfate with a low activation energy. CoCA-A can float beneath the surface of aqueous solution and can be taken out completely without any changes in morphology. The monolith is promising to be developed into an alternative water purification technology due to the easily separable feature. Copyright © 2017 Elsevier B.V. All rights reserved.
Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade
NASA Astrophysics Data System (ADS)
Cavicchioli, C.; Chalmet, P. L.; Giubilato, P.; Hillemanns, H.; Junique, A.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mattiazzo, S.; Mugnier, H.; Musa, L.; Pantano, D.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Van Hoorne, J. W.; Yang, P.
2014-11-01
Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget ( 0.3 %X0 in total for each inner layer) and higher granularity ( 20 μm × 20 μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ > 1 kΩ cm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a 55Fe X-ray source and 1-5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented.
Reversible Ammonia Sorption for the Primary Life Support System (PLSS)
NASA Technical Reports Server (NTRS)
Wojtowicz, Marek A.; Cosgrove, Joseph E.; Serio, Michael A.; Jennings, Mallory A.
2012-01-01
Results are presented on the development of regenerable trace-contaminant (TC) sorbent for use in Extravehicular Activities (EVAs), and more specifically in the Primary Life Support System (PLSS). Since ammonia is the most important TC to be captured, data presented in this paper are limited to ammonia sorption, with results relevant to other TCs to be reported at a later time. The currently available TC-control technology involves the use of a packed bed of acid-impregnated granular charcoal. The sorbent is non-regenerable, and its use is associated with appreciable pressure drop, i.e. power consumption. The objective of this work is to demonstrate the feasibility of using vacuum-regenerable sorbents for PLSS application. In this study, several carbon sorbent monoliths were fabricated and tested. Multiple adsorption/vacuum-regeneration cycles were demonstrated at room temperature, as well as carbon surface conditioning that enhances ammonia sorption without impairing sorbent regeneration. Depending on sorbent monolith geometry, the reduction in pressure drop with respect to granular sorbent was found to be between 50% and two orders of magnitude. Resistive heating of the carbon sorbent monolith was demonstrated by applying voltage to the opposite ends of the monolith.
NASA Astrophysics Data System (ADS)
Lee, El-Hang; Lee, Seung-Gol; O, Beom Hoan; Park, Se Geun
2004-08-01
Scientific and technological issues and considerations regarding the integration of miniaturized microphotonic devices, circuits and systems in micron, submicron, and quantum scale, are presented. First, we examine the issues regarding the miniaturization of photonic devices including the size effect, proximity effect, energy confinement effect, microcavity effect, optical and quantum interference effect, high field effect, nonlinear effect, noise effect, quantum optical effect, and chaotic effect. Secondly, we examine the issues regarding the interconnection including the optical alignment, minimizing the interconnection losses, and maintaining optical modes. Thirdly, we address the issues regarding the two-dimensional or three-dimensional integration either in a hybrid format or in a monolithic format between active devices and passive devices of varying functions. We find that the concept of optical printed circuit board (O-PCB) that we propose is highly attractive as a platform for micro/nano/quantum-scale photonic integration. We examine the technological issues to be addressed in the process of fabrication, characterization, and packaging for actual implementation of the miniaturization, interconnection and integration. Devices that we have used for our study include: mode conversion schemes, micro-ring and micro-racetrack resonator devices, multimode interference devices, lasers, vertical cavity surface emitting microlasers, and their arrays. Future prospects are also discussed.
Microfluidic devices and methods including porous polymer monoliths
Hatch, Anson V; Sommer, Gregory J; Singh, Anup K; Wang, Ying-Chih; Abhyankar, Vinay V
2014-04-22
Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.
Microfluidic devices and methods including porous polymer monoliths
Hatch, Anson V.; Sommer, Gregory j.; Singh, Anup K.; Wang, Ying-Chih; Abhyankar, Vinay
2015-12-01
Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.
Characteristics of Adolescent Sierra Leonean Refugees in Public Schools in New York City
ERIC Educational Resources Information Center
Davies, Amy Z.
2008-01-01
The tendency to view immigrant students as a monolithic group has masked the needs of specific groups of students. This study gives visibility to Sierra Leonean refugee students and indicates to policy makers, administrators, and teachers provisions that would facilitate the students' integration into the school system in the United States. The…
Wireless spread-spectrum telesensor chip with synchronous digital architecture
Smith, Stephen F.; Turner, Gary W.; Wintenberg, Alan L.; Emery, Michael Steven
2005-03-08
A fully integrated wireless spread-spectrum sensor incorporating all elements of an "intelligent" sensor on a single circuit chip is capable of telemetering data to a receiver. Synchronous control of all elements of the chip provides low-cost, low-noise, and highly robust data transmission, in turn enabling the use of low-cost monolithic receivers.
Solid State Technology Branch of NASA Lewis Research Center
NASA Technical Reports Server (NTRS)
1991-01-01
Reprints of one year's production of research publications (June 1990 to June 1991) are presented. These are organized into three major sections: microwave circuits, both hybrid and monolithic microwave integrated circuits (MMICs); materials and device work; and superconductivity. The included papers also cover more specific topics involving waveguides, phase array antennas, dielectrics, and high temperature superconductors.
NASA Technical Reports Server (NTRS)
Lansing, Faiza S.; Rascoe, Daniel L.
1993-01-01
This paper presents a modified Finite-Difference Time-Domain (FDTD) technique using a generalized conformed orthogonal grid. The use of the Conformed Orthogonal Grid, Finite Difference Time Domain (GFDTD) enables the designer to match all the circuit dimensions, hence eliminating a major source o error in the analysis.
Progress Toward a Monolithically Integrated Coherent Diode Laser Array.
1981-02-20
eoCteehinique is uised extensively in fabricat ing MBR I iseor, ind pi~ rovide,, adidi t iooat infornation on the quality of the crystal. \\BR CAI FBR AI) \\R...crystals are then cleaned in hot isopropyl alcohol held in a vertical position by a glass holder submerged in isopropyl alcohol. They soak for about 1 hr
A flexible CPW package for a 30 GHz MMIC amplifier. [coplanar waveguide
NASA Technical Reports Server (NTRS)
Simons, Rainee N.; Taub, Susan R.
1992-01-01
A novel package, which consists of a carrier housing, has been developed for monolithic-millimeter wave Integrated Circuit amplifiers which operate at 30 giga-Hz. The carrier has coplanar waveguide (CPW) interconnects and provides heat-sinking, tuning, and cascading capabilities. The housing provides electrical isolation, mechanical protection and a feed-thru for biasing.
Deconstructing risk: Separable encoding of variance and skewness in the brain
Symmonds, Mkael; Wright, Nicholas D.; Bach, Dominik R.; Dolan, Raymond J.
2011-01-01
Risky choice entails a need to appraise all possible outcomes and integrate this information with individual risk preference. Risk is frequently quantified solely by statistical variance of outcomes, but here we provide evidence that individuals’ choice behaviour is sensitive to both dispersion (variance) and asymmetry (skewness) of outcomes. Using a novel behavioural paradigm in humans, we independently manipulated these ‘summary statistics’ while scanning subjects with fMRI. We show that a behavioural sensitivity to variance and skewness is mirrored in neuroanatomically dissociable representations of these quantities, with parietal cortex showing sensitivity to the former and prefrontal cortex and ventral striatum to the latter. Furthermore, integration of these objective risk metrics with subjective risk preference is expressed in a subject-specific coupling between neural activity and choice behaviour in anterior insula. Our findings show that risk is neither monolithic from a behavioural nor neural perspective and its decomposition is evident both in distinct behavioural preferences and in segregated underlying brain representations. PMID:21763444
Fusion of Renewable Ring Resonator Lasers and Ultrafast Laser Inscribed Photonic Waveguides
Chandrahalim, Hengky; Rand, Stephen C.; Fan, Xudong
2016-01-01
We demonstrated the monolithic integration of reusable and wavelength reconfigurable ring resonator lasers and waveguides of arbitrary shapes to out-couple and guide laser emission on the same fused-silica chip. The ring resonator hosts were patterned by a single-mask standard lithography, whereas the waveguides were inscribed in the proximity of the ring resonator by using 3-dimensional femtosecond laser inscription technology. Reusability of the integrated ring resonator – waveguide system was examined by depositing, removing, and re-depositing dye-doped SU-8 solid polymer, SU-8 liquid polymer, and liquid solvent (toluene). The wavelength reconfigurability was validated by employing Rhodamine 6G (R6G) and 3,3′-Diethyloxacarbocyanine iodide (CY3) as exemplary gain media. In all above cases, the waveguide was able to couple out and guide the laser emission. This work opens a door to reconfigurable active and passive photonic devices for on-chip coherent light sources, optical signal processing, and the investigation of new optical phenomena. PMID:27600872
Fusion of Renewable Ring Resonator Lasers and Ultrafast Laser Inscribed Photonic Waveguides.
Chandrahalim, Hengky; Rand, Stephen C; Fan, Xudong
2016-09-07
We demonstrated the monolithic integration of reusable and wavelength reconfigurable ring resonator lasers and waveguides of arbitrary shapes to out-couple and guide laser emission on the same fused-silica chip. The ring resonator hosts were patterned by a single-mask standard lithography, whereas the waveguides were inscribed in the proximity of the ring resonator by using 3-dimensional femtosecond laser inscription technology. Reusability of the integrated ring resonator - waveguide system was examined by depositing, removing, and re-depositing dye-doped SU-8 solid polymer, SU-8 liquid polymer, and liquid solvent (toluene). The wavelength reconfigurability was validated by employing Rhodamine 6G (R6G) and 3,3'-Diethyloxacarbocyanine iodide (CY3) as exemplary gain media. In all above cases, the waveguide was able to couple out and guide the laser emission. This work opens a door to reconfigurable active and passive photonic devices for on-chip coherent light sources, optical signal processing, and the investigation of new optical phenomena.
Dynamic metasurface lens based on MEMS technology
NASA Astrophysics Data System (ADS)
Roy, Tapashree; Zhang, Shuyan; Jung, Il Woong; Troccoli, Mariano; Capasso, Federico; Lopez, Daniel
2018-02-01
In the recent years, metasurfaces, being flat and lightweight, have been designed to replace bulky optical components with various functions. We demonstrate a monolithic Micro-Electro-Mechanical System (MEMS) integrated with a metasurface-based flat lens that focuses light in the mid-infrared spectrum. A two-dimensional scanning MEMS platform controls the angle of the lens along two orthogonal axes by ±9°, thus enabling dynamic beam steering. The device could be used to compensate for off-axis incident light and thus correct for aberrations such as coma. We show that for low angular displacements, the integrated lens-on-MEMS system does not affect the mechanical performance of the MEMS actuators and preserves the focused beam profile as well as the measured full width at half maximum. We envision a new class of flat optical devices with active control provided by the combination of metasurfaces and MEMS for a wide range of applications, such as miniaturized MEMS-based microscope systems, LIDAR scanners, and projection systems.
Advances in integrated photonic circuits for packet-switched interconnection
NASA Astrophysics Data System (ADS)
Williams, Kevin A.; Stabile, Ripalta
2014-03-01
Sustained increases in capacity and connectivity are needed to overcome congestion in a range of broadband communication network nodes. Packet routing and switching in the electronic domain are leading to unsustainable energy- and bandwidth-densities, motivating research into hybrid solutions: optical switching engines are introduced for massive-bandwidth data transport while the electronic domain is clocked at more modest GHz rates to manage routing. Commercially-deployed optical switching engines using MEMS technologies are unwieldy and too slow to reconfigure for future packet-based networking. Optoelectronic packet-compliant switch technologies have been demonstrated as laboratory prototypes, but they have so far mostly used discretely pigtailed components, which are impractical for control plane development and product assembly. Integrated photonics has long held the promise of reduced hardware complexity and may be the critical step towards packet-compliant optical switching engines. Recently a number of laboratories world-wide have prototyped optical switching circuits using monolithic integration technology with up to several hundreds of integrated optical components per chip. Our own work has focused on multi-input to multi-output switching matrices. Recently we have demonstrated 8×8×8λ space and wavelength selective switches using gated cyclic routers and 16×16 broadband switching chips using monolithic multi-stage networks. We now operate these advanced circuits with custom control planes implemented with FPGAs to explore real time packet routing in multi-wavelength, multi-port test-beds. We review our contributions in the context of state of the art photonic integrated circuit technology and packet optical switching hardware demonstrations.
Lv, Yongqin; Mei, Danping; Pan, Xinxin; Tan, Tianwei
2010-09-15
A novel beta-cyclodextrin (beta-CD) functionalized organic polymer monolith was prepared by covalently bonding ethylenediamine-beta-CD (EDA-beta-CD) to poly(glycidyl methacrylate-co-ethylene glycol dimethacrylate) (poly(GMA-co-EGDMA)) monolith via ring opening reaction of epoxy groups. SEM characterization was performed to confirm the homogeneity of the monolithic polymer. The resulting monolith was then characterized by DSC and XPS elemental analysis to study the thermal stability of the monolith, and to prove the successful immobilization of beta-CD on the polymer substrate. The beta-CD ligand density of 0.68 mmol g(-1) was obtained for the modified monolith, indicating the high reactivity and efficiency of the EDA-beta-CD modifier. The ethylenediamine-beta-CD functionalized monoliths were used for the chiral separation of ibuprofen racemic mixture and showed promising results. Copyright (c) 2010 Elsevier B.V. All rights reserved.
Moitra, Nirmalya; Fukumoto, Shotaro; Reboul, Julien; Sumida, Kenji; Zhu, Yang; Nakanishi, Kazuki; Furukawa, Shuhei; Kitagawa, Susumu; Kanamori, Kazuyoshi
2015-02-28
The synthesis of highly crystalline macro-meso-microporous monolithic Cu3(btc)2 (HKUST-1; btc(3-) = benzene-1,3,5-tricarboxylate) is demonstrated by direct conversion of Cu(OH)2-based monoliths while preserving the characteristic macroporous structure. The high mechanical strength of the monoliths is promising for possible applications to continuous flow reactors.