Vertical Ge photodetector base on InP taper waveguide

NASA Astrophysics Data System (ADS)

Amiri, Iraj Sadegh; Ariannejad, M. M.; Azzuhri, S. R. B.; Anwar, T.; Kouhdaragh, V.; Yupapin, P.

2018-06-01

In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.

Optical devices integrated with semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Oh, Kwang R.; Park, Moon S.; Jeong, Jong S.; Baek, Yongsoon; Oh, Dae-Kon

2000-07-01

Semiconductor optical amplifiers (SOA's) have been used as a key optical component for the high capacity communication systems. The monolithic integration is necessary for the stable operation of these devices and the wider applications. In this paper, the coupling technique between different waveguides and the integration of SSC's are discussed and the research results of optical devices integrated with SOA's are presented.

Monolithic integration of a plasmonic sensor with CMOS technology

NASA Astrophysics Data System (ADS)

Shakoor, Abdul; Cheah, Boon C.; Hao, Danni; Al-Rawhani, Mohammed; Nagy, Bence; Grant, James; Dale, Carl; Keegan, Neil; McNeil, Calum; Cumming, David R. S.

2017-02-01

Monolithic integration of nanophotonic sensors with CMOS detectors can transform the laboratory based nanophotonic sensors into practical devices with a range of applications in everyday life. In this work, by monolithically integrating an array of gold nanodiscs with the CMOS photodiode we have developed a compact and miniaturized nanophotonic sensor system having direct electrical read out. Doing so eliminates the need of expensive and bulky laboratory based optical spectrum analyzers used currently for measurements of nanophotonic sensor chips. The experimental optical sensitivity of the gold nanodiscs is measured to be 275 nm/RIU which translates to an electrical sensitivity of 5.4 V/RIU. This integration of nanophotonic sensors with the CMOS electronics has the potential to revolutionize personalized medical diagnostics similar to the way in which the CMOS technology has revolutionized the electronics industry.

First demonstration and field trial on multi-user UDWDM-PON full duplex PSK-PSK with single monolithic integrated dual-output-DFB-SOA based ONUs.

PubMed

Chu, GuangYong; Maho, Anaëlle; Cano, Iván; Polo, Victor; Brenot, Romain; Debrégeas, Hélène; Prat, Josep

2016-10-15

We demonstrate a monolithically integrated dual-output DFB-SOA, and conduct the field trial on a multi-user bidirectional coherent ultradense wavelength division multiplexing-passive optical network (UDWDM-PON). To the best of our knowledge, this is the first achievement of simplified single integrated laser-based neighboring coherent optical network units (ONUs) with a 12.5 GHz channel spaced ultra-dense access network, including both downstream and upstream, taking the benefits of low footprint and low-temperature dependence.

Coherent optical monolithic phased-array antenna steering system

DOEpatents

Hietala, Vincent M.; Kravitz, Stanley H.; Vawter, Gregory A.

1994-01-01

An optical-based RF beam steering system for phased-array antennas comprising a photonic integrated circuit (PIC). The system is based on optical heterodyning employed to produce microwave phase shifting by a monolithic PIC constructed entirely of passive components. Microwave power and control signal distribution to the antenna is accomplished by optical fiber, permitting physical separation of the PIC and its control functions from the antenna. The system reduces size, weight, complexity, and cost of phased-array antenna systems.

Monolithic integration of microfluidic channels and semiconductor lasers.

PubMed

Cran-McGreehin, Simon J; Dholakia, Kishan; Krauss, Thomas F

2006-08-21

We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

Monolithic integration of microfluidic channels and semiconductor lasers

NASA Astrophysics Data System (ADS)

Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.

2006-08-01

We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

PubMed

Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

2011-07-04

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

10Gbps monolithic silicon FTTH transceiver without laser diode for a new PON configuration.

PubMed

Zhang, Jing; Liow, Tsung-Yang; Lo, Guo-Qiang; Kwong, Dim-Lee

2010-03-01

A new passive optical network (PON) configuration and a novel silicon photonic transceiver architecture for optical network unit (ONU) are proposed, eliminating the need for an internal laser source in ONU. The Si transceiver is fully monolithic, includes integrated wavelength division multiplexing (WDM) filters, modulators (MOD) and photo-detectors (PD), and demonstrates low-cost high volume manufacturability.

Monolithic integrated optic fiber Bragg grating sensor interrogator

NASA Astrophysics Data System (ADS)

Mendoza, Edgar A.; Esterkin, Yan; Kempen, Cornelia; Sun, Songjian

2010-04-01

Fiber Bragg gratings (FBGs) are a mature sensing technology that has gained rapid acceptance in civil, aerospace, chemical and petrochemical, medicine, aviation and automotive industries. Fiber Bragg grating sensors can be use for a variety of measurements including strain, stress, vibration, acoustics, acceleration, pressure, temperature, moisture, and corrosion distributed at multiple locations within the structure using a single fiber element. The most prominent advantages of FBGs are: small size and light weight, multiple FBG transducers on a single fiber, and immunity to radio frequency interference. A major disadvantage of FBG technology is that conventional state-of-the-art fiber Bragg grating interrogation systems are typically bulky, heavy, and costly bench top instruments that are assembled from off-the-shelf fiber optic and optical components integrated with a signal electronics board into an instrument console. Based on the need for a compact FBG interrogation system, this paper describes recent progress towards the development of a miniature fiber Bragg grating sensor interrogator (FBG-TransceiverTM) system based on multi-channel monolithic integrated optic sensor microchip technology. The integrated optic microchip technology enables the monolithic integration of all of the functionalities, both passive and active, of conventional bench top FBG sensor interrogators systems, packaged in a miniaturized, low power operation, 2-cm x 5-cm small form factor (SFF) package suitable for the long-term structural health monitoring in applications where size, weight, and power are critical for operation.

Validation and perspectives of a femtosecond laser fabricated monolithic optical stretcher

PubMed Central

Bellini, Nicola; Bragheri, Francesca; Cristiani, Ilaria; Guck, Jochen; Osellame, Roberto; Whyte, Graeme

2012-01-01

The combination of high power laser beams with microfluidic delivery of cells is at the heart of high-throughput, single-cell analysis and disease diagnosis with an optical stretcher. So far, the challenges arising from this combination have been addressed by externally aligning optical fibres with microfluidic glass capillaries, which has a limited potential for integration into lab-on-a-chip environments. Here we demonstrate the successful production and use of a monolithic glass chip for optical stretching of white blood cells, featuring microfluidic channels and optical waveguides directly written into bulk glass by femtosecond laser pulses. The performance of this novel chip is compared to the standard capillary configuration. The robustness, durability and potential for intricate flow patterns provided by this monolithic optical stretcher chip suggest its use for future diagnostic and biotechnological applications. PMID:23082304

Femtosecond Laser Microfabrication of an Integrated Device for Optical Release and Sensing of Bioactive Compounds.

PubMed

Ghezzi, Diego; Vazquez, Rebeca Martinez; Osellame, Roberto; Valtorta, Flavia; Pedrocchi, Alessandra; Valle, Giuseppe Della; Ramponi, Roberta; Ferrigno, Giancarlo; Cerullo, Giulio

2008-10-23

Flash photolysis of caged compounds is one of the most powerful approaches to investigate the dynamic response of living cells. Monolithically integrated devices suitable for optical uncaging are in great demand since they greatly simplify the experiments and allow their automation. Here we demonstrate the fabrication of an integrated bio-photonic device for the optical release of caged compounds. Such a device is fabricated using femtosecond laser micromachining of a glass substrate. More in detail, femtosecond lasers are used both to cut the substrate in order to create a pit for cell growth and to inscribe optical waveguides for spatially selective uncaging of the compounds present in the culture medium. The operation of this monolithic bio-photonic device is tested using both free and caged fluorescent compounds to probe its capability of multipoint release and optical sensing. Application of this device to the study of neuronal network activity can be envisaged.

Freeform diamond machining of complex monolithic metal optics for integral field systems

NASA Astrophysics Data System (ADS)

Dubbeldam, Cornelis M.; Robertson, David J.; Preuss, Werner

2004-09-01

Implementation of the optical designs of image slicing Integral Field Systems requires accurate alignment of a large number of small (and therefore difficult to manipulate) optical components. In order to facilitate the integration of these complex systems, the Astronomical Instrumentation Group (AIG) of the University of Durham, in collaboration with the Labor für Mikrozerspanung (Laboratory for Precision Machining - LFM) of the University of Bremen, have developed a technique for fabricating monolithic multi-faceted mirror arrays using freeform diamond machining. Using this technique, the inherent accuracy of the diamond machining equipment is exploited to achieve the required relative alignment accuracy of the facets, as well as an excellent optical surface quality for each individual facet. Monolithic arrays manufactured using this freeform diamond machining technique were successfully applied in the Integral Field Unit for the GEMINI Near-InfraRed Spectrograph (GNIRS IFU), which was recently installed at GEMINI South. Details of their fabrication process and optical performance are presented in this paper. In addition, the direction of current development work, conducted under the auspices of the Durham Instrumentation R&D Program supported by the UK Particle Physics and Astronomy Research Council (PPARC), will be discussed. The main emphasis of this research is to improve further the optical performance of diamond machined components, as well as to streamline the production and quality control processes with a view to making this technique suitable for multi-IFU instruments such as KMOS etc., which require series production of large quantities of optical components.

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

PubMed

Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

2014-10-20

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siwak, N. P.; Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740; Fan, X. Z.

2014-10-06

An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We havemore » fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.« less

Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells.

PubMed

Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo; Ishikawa, Hiroshi

2011-07-04

We have developed a compact all-optical gate switch with a footprint less than 1 mm2, in which an optical nonlinear waveguide using cross-phase-modulation associated with intersubband transition in InGaAs/AlGaAs/AlAsSb coupled double quantum wells and a Michelson interferometer (MI) are monolithically integrated on an InP chip. The MI configuration allows a transverse magnetic pump light direct access to an MI arm for phase modulation while passive photonic integrated circuits serve a transverse electric signal light. Full switching of the π-rad nonlinear phase shift is achieved with a pump pulse energy of 8.6 pJ at a 10-GHz repetition rate. We also demonstrate all-optical demultiplexing of a 160-Gb/s signal to a 40-Gb/s signal.

All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

NASA Astrophysics Data System (ADS)

Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

2016-03-01

At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

Femtosecond Laser Microfabrication of an Integrated Device for Optical Release and Sensing of Bioactive Compounds

PubMed Central

Ghezzi, Diego; Vazquez, Rebeca Martinez; Osellame, Roberto; Valtorta, Flavia; Pedrocchi, Alessandra; Valle, Giuseppe Della; Ramponi, Roberta; Ferrigno, Giancarlo; Cerullo, Giulio

2008-01-01

Flash photolysis of caged compounds is one of the most powerful approaches to investigate the dynamic response of living cells. Monolithically integrated devices suitable for optical uncaging are in great demand since they greatly simplify the experiments and allow their automation. Here we demonstrate the fabrication of an integrated bio-photonic device for the optical release of caged compounds. Such a device is fabricated using femtosecond laser micromachining of a glass substrate. More in detail, femtosecond lasers are used both to cut the substrate in order to create a pit for cell growth and to inscribe optical waveguides for spatially selective uncaging of the compounds present in the culture medium. The operation of this monolithic bio-photonic device is tested using both free and caged fluorescent compounds to probe its capability of multipoint release and optical sensing. Application of this device to the study of neuronal network activity can be envisaged. PMID:27873888

Photonic generation of ultra-wide-band doublet pulse through monolithic integration of tapered directional coupler and quantum well waveguide.

PubMed

Kuo, Yu-Zheng; Wu, Jui-Pin; Wu, Tsu-Hsiu; Chiu, Yi-Jen

2012-10-22

We proposed and demonstrated a novel scheme of photonic ultra-wide-band (UWB) doublet pulse based on monolithic integration of tapered optical-direction coupler (TODC) and multiple-quantum-well (MQW) waveguide. TODC is formed by a top tapered MQW waveguide vertically integrating with an underneath passive waveguide. Through simultaneous field-driven optical index- and absorption- change in MQW, the partial optical coupling in TODC can be used to get a valley-shaped of optical transmission against voltage. Therefore, doublet-enveloped optical pulse can be realized by high-speed and high-efficient conversion of input electrical pulse. By just adjusting bias through MQW, 1530 nm photonic UWB doublet optical pulse with 75-ps pulse width, below -41.3 dBm power, 125% fractional bandwidth, and 7.5 GHz of -10 dB bandwidth has been demonstrated, fitted into FCC requirement (3.1 GHz~10.6 GHz). Doublet-pulse data transmission generated in optical fiber is also performed for further characterization, exhibiting a successful 1.25 Gb/s error-free transmission. It suggests such optoelectronic integration template can be applied for photonic UWB generation in fiber-based communications.

Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

PubMed

Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

2016-03-09

Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links.

Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch.

PubMed

Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo; Hasama, Toshifumi; Ishikawa, Hiroshi

2013-07-01

We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation with a dose of 5 × 10(14) cm(-2) and subsequent annealing at 720 °C for 60 s, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the cross-phase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ at a 10-GHz repetition rate.

Novel monolithic integration scheme for high-speed electroabsorption modulators and semiconductor optical amplifiers using cascaded structure.

PubMed

Lin, Fang-Zheng; Wu, Tsu-Hsiu; Chiu, Yi-Jen

2009-06-08

A new monolithic integration scheme, namely cascaded-integration (CI), for improving high-speed optical modulation is proposed and demonstrated. High-speed electroabsorption modulators (EAMs) and semiconductor optical amplifiers (SOAs) are taken as the integrated elements of CI. This structure is based on an optical waveguide defined by cascading segmented EAMs with segmented SOAs, while high-impedance transmission lines (HITLs) are used for periodically interconnecting EAMs, forming a distributive optical re-amplification and re-modulation. Therefore, not only the optical modulation can be beneficial from SOA gain, but also high electrical reflection due to EAM low characteristic impedance can be greatly reduced. Two integration schemes, CI and conventional single-section (SS), with same total EAM- and SOA- lengths are fabricated and compared to examine the concept. Same modulation-depth against with EAM bias (up to 5V) as well as SOA injection current (up to 60mA) is found in both structures. In comparison with SS, a < 1dB extra optical-propagation loss in CI is measured due to multi-sections of electrical-isolation regions between EAMs and SOAs, suggesting no significant deterioration in CI on DC optical modulation efficiency. Lower than -12dB of electrical reflection from D.C. to 30GHz is observed in CI, better than -5dB reflection in SS for frequency of above 5GHz. Superior high-speed electrical properties in CI structure can thus lead to higher speed of electrical-to-optical (EO) response, where -3dB bandwidths are >30GHz and 13GHz for CI and SS respectively. Simulation results on electrical and EO response are quite consistent with measurement, confirming that CI can lower the driving power at high-speed regime, while the optical loss is still kept the same level. Taking such distributive advantage (CI) with optical gain, not only higher-speed modulation with high output optical power can be attained, but also the trade-off issue due to impedance mismatch can be released to reduce the driving power of modulator. Such kind of monolithic integration scheme also has potential for the applications of other high-speed optoelectronics devices.

Monolithically integrated distributed feedback laser array wavelength-selectable light sources for WDM-PON application

NASA Astrophysics Data System (ADS)

Chen, Xin; Zhao, Jianyi; Zhou, Ning; Huang, Xiaodong; Cao, Mingde; Wang, Lei; Liu, Wen

2015-01-01

The monolithic integration of 1.5-μm four channels phase shift distributed feedback lasers array (DFB-LD array) with 4×1 multi-mode interference (MMI) optical combiner is demonstrated. A home developed process mainly consists of butt-joint regrowth (BJR) and simultaneous thermal and ultraviolet nanoimprint lithography (STU-NIL) is implemented to fabricate gratings and integrated devices. The threshold currents of the lasers are less than 10 mA and the side mode suppression ratios (SMSR) are better than 40 dB for all channels. Quasi-continuous tuning is realized over 7.5 nm wavelength region with the 30 °C temperature variation. The results indicate that the integration device we proposed can be used in wavelength division multiplexing passive optical networks (WDM-PON).

Eigenpolarization theory of monolithic nonplanar ring oscillators

NASA Technical Reports Server (NTRS)

Nilsson, Alan C.; Gustafson, Eric K.; Byer, Robert L.

1989-01-01

Diode-laser-pumped monolithic nonplanar ring oscillators (NPROs) in an applied magnetic field can operate as unidirectional traveling-wave lasers. The diode laser pumping, monolithic construction, and unidirectional oscillation lead to narrow linewidth radiation. Here, a comprehensive theory of the eigenpolarizations of a monolithic NPRO is presented. It is shown how the properties of the integral optical diode that forces unidirectional operation depend on the choice of the gain medium, the applied magnetic field, the output coupler, and the geometry of the nonplanar ring light path. Using optical equivalence theorems to gain insight into the polarization characteristics of the NPRO, a strategy for designing NPROs with low thresholds and large loss nonreciprocities is given. An analysis of the eigenpolarizations for one such NPRO is presented, alternative optimization approaches are considered, and the prospects for further reducing the linewidths of these lasers are briefly discussed.

Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

NASA Astrophysics Data System (ADS)

Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

1986-01-01

A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

Integrated ultra-low-loss resonator on a chip

NASA Astrophysics Data System (ADS)

Poon, Joyce K. S.

2018-05-01

Exquisitely low-loss optical resonators have thus far remained discrete. Monolithic integration of waveguides with silica resonators that have Q factors >100 million charts a path toward incorporating these devices in photonic circuits.

Foundry fabricated photonic integrated circuit optical phase lock loop.

PubMed

Bałakier, Katarzyna; Fice, Martyn J; Ponnampalam, Lalitha; Graham, Chris S; Wonfor, Adrian; Seeds, Alwyn J; Renaud, Cyril C

2017-07-24

This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work within a heterodyne optical phase locked loop (OPLL). The PIC and an external electronic circuit were used to phase-lock a single-line semiconductor laser diode to an incoming reference laser, with tuneable frequency offset from 4 GHz to 12 GHz. The PIC contains 33 active and passive components monolithically integrated on a single chip, fully demonstrating the capability of a generic foundry PIC fabrication model. The electronic part of the OPLL consists of commercially available RF components. This semi-packaged system stabilizes the phase and frequency of the integrated laser so that an absolute frequency, high-purity heterodyne signal can be generated when the OPLL is in operation, with phase noise lower than -100 dBc/Hz at 10 kHz offset from the carrier. This is the lowest phase noise level ever demonstrated by monolithically integrated OPLLs.

Optoelectronics components and technology for optical networking in China: recent progress and future trends

NASA Astrophysics Data System (ADS)

Jiang, Shan; Liu, Shuihua

2004-04-01

Current optical communication systems are more and more relying on the advanced opto-electronic components. A series of revolutionary optical and optoelectronics components technology accounts for the fast progress and field deployment of high-capacity telecommunication and data-transmission systems. Since 1990s, the optical communication industry in China entered a high-speed development period and its wide deployment had already established the solid base for China information infrastructure. In this presentation, the main progress of optoelectronics components and technology in China are reviewed, which includes semiconductor laser diode/photo receiver, fiber optical amplifier, DWDM multiplexer/de-multiplexer, dispersion compensation components and all optical network node components, such as optical switch, OADM, tunable optical filters and variable optical attenuators, etc. Integration discrete components into monolithic/hybrid platform component is an inevitable choice for the consideration of performance, mass production and cost reduction. The current status and the future trends of OEIC and PIC components technology in China will also be discuss mainly on the monolithic integration DFB LD + EA modulator, and planar light-wave circuit (PLC) technology, etc.

Scalable InP integrated wavelength selector based on binary search.

PubMed

Calabretta, Nicola; Stabile, Ripalta; Albores-Mejia, Aaron; Williams, Kevin A; Dorren, Harm J S

2011-10-01

We present an InP monolithically integrated wavelength selector that implements a binary search for selecting one from N modulated wavelengths. The InP chip requires only log(2)N optical filters and log(2)N optical switches. Experimental results show nanosecond reconfiguration and error-free wavelength selection of four modulated wavelengths with 2 dB of power penalty. © 2011 Optical Society of America

High frequency optical communications; Proceedings of the Meeting, Cambridge, MA, Sept. 23, 24, 1986

NASA Astrophysics Data System (ADS)

Ramer, O. Glenn; Sierak, Paul

Topics discussed in this volume include systems and applications, detectors, sources, and coherent communications. Papers are presented on RF fiber optic links for avionics applications, fiber optics and optoelectronics for radar and electronic warfare applications, symmetric coplanar electrodes for high-speed Ti:LiNbO3 devices, and surface wave electrooptic modulator. Attention is given to X-band RF fiber-optic links, fiber-optic links for microwave signal transmission, GaAs monolithic receiver and laser driver for GHz transmission rates, and monolithically integrable high-speed photodetectors. Additional papers are on irregular and chaotic behavior of semiconductor lasers under modulation, high-frequency laser package for microwave optical communications, receiver modeling for coherent light wave communications, and polarization sensors and controllers for coherent optical communication systems.

Monolithically mode division multiplexing photonic integrated circuit for large-capacity optical interconnection.

PubMed

Chen, Guanyu; Yu, Yu; Zhang, Xinliang

2016-08-01

We propose and fabricate an on-chip mode division multiplexed (MDM) photonic interconnection system. Such a monolithically photonic integrated circuit (PIC) is composed of a grating coupler, two micro-ring modulators, mode multiplexer/demultiplexer, and two germanium photodetectors. The signals' generation, multiplexing, transmission, demultiplexing, and detection are successfully demonstrated on the same chip. Twenty Gb/s MDM signals are successfully processed with clear and open eye diagrams, validating the feasibility of the proposed circuit. The measured power penalties show a good performance of the MDM link. The proposed on-chip MDM system can be potentially used for large-capacity optical interconnection in future high-performance computers and big data centers.

Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

NASA Astrophysics Data System (ADS)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-03-01

Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

Monolithically Integrated High-β Nanowire Lasers on Silicon.

PubMed

Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

2016-01-13

Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.

A 16-Channel Distributed-Feedback Laser Array with a Monolithic Integrated Arrayed Waveguide Grating Multiplexer for a Wavelength Division Multiplex-Passive Optical Network System Network

NASA Astrophysics Data System (ADS)

Zhao, Jian-Yi; Chen, Xin; Zhou, Ning; Huang, Xiao-Dong; Cao, Ming-De; Liu, Wen

2014-07-01

A 16-channel distributed-feedback (DFB) laser array with a monolithic integrated arrayed waveguide grating multiplexer for a wavelength division multiplex-passive optical network system is fabricated by using the butt-joint metal organic chemical vapor deposition technology and nanoimpirnt technology. The results show that the threshold current is about 20-30 mA at 25°C. The DFB laser side output power is about 16 mW with a 150 mA injection current. The lasing wavelength is from 1550 nm to 1575 nm covering a more than 25 nm range with 200 GHz channel space. A more than 55 dB sidemode suppression ratio is obtained.

155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators

NASA Technical Reports Server (NTRS)

Rosenbaum, Steven E.; Kormanyos, Brian K.; Jelloian, Linda M.; Matloubian, Mehran; Brown, April S.; Larson, Lawrence E.; Nguyen, Loi D.; Thompson, Mark A.; Katehi, Linda P. B.; Rebeiz, Gabriel M.

1995-01-01

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMTs (high-electron mobility transistors). These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 micron. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.

3D micro-lenses for free space intra-chip coupling in photonic-integrated circuits (Conference Presentation)

NASA Astrophysics Data System (ADS)

Thomas, Robert; Williams, Gwilym I.; Ladak, Sam; Smowton, Peter M.

2017-02-01

The integration of multiple optical elements on a common substrate to create photonic integrated circuits (PIC) has been successfully applied in: fibre-optic communications, photonic computing and optical sensing. The push towards III-Vs on silicon promises a new generation of integrated devices that combine the advantages of both integrated electronics and optics in a single substrate. III-V edge emitting laser diodes offer high efficiency and low threshold currents making them ideal candidates for the optically active elements of the next generation of PICs. Nevertheless, the highly divergent and asymmetric beam shapes intrinsic to these devices limits the efficiency with which optical elements can be free space coupled intra-chip; a capability particularly desirable for optical sensing applications e.g. [1]. Furthermore, the monolithic nature of the integrated approach prohibits the use of macroscopic lenses to improve coupling. However, with the advent of 3D direct laser writing, three dimensional lenses can now be manufactured on a microscopic-scale [2], making the use of micro-lens technology for enhanced free space coupling of integrated optical elements feasible. Here we demonstrate the first use of 3D micro-lenses to improve the coupling efficiency of monolithically integrated lasers. Fabricated from IP-dip photoresist using a Nanoscribe GmbH 3D lithography tool, the lenses are embedded directly onto a structured GaInP/AlGaInP substrate containing arrays of ridge lasers free space coupled to one another via a 200 μm air gap. We compare the coupling efficiency of these lasers with and without micro-lenses through photo-voltage and beam profile measurements and discuss optimisation of lens design.

Optical fiber loops and helices: tools for integrated photonic device characterization and microfluidic trapping

NASA Astrophysics Data System (ADS)

Ren, Yundong; Zhang, Rui; Ti, Chaoyang; Liu, Yuxiang

2016-09-01

Tapered optical fibers can deliver guided light into and carry light out of micro/nanoscale systems with low loss and high spatial resolution, which makes them ideal tools in integrated photonics and microfluidics. Special geometries of tapered fibers are desired for probing monolithic devices in plane as well as optical manipulation of micro particles in fluids. However, for many specially shaped tapered fibers, it remains a challenge to fabricate them in a straightforward, controllable, and repeatable way. In this work, we fabricated and characterized two special geometries of tapered optical fibers, namely fiber loops and helices, that could be switched between one and the other. The fiber loops in this work are distinct from previous ones in terms of their superior mechanical stability and high optical quality factors in air, thanks to a post-annealing process. We experimentally measured an intrinsic optical quality factor of 32,500 and a finesse of 137 from a fiber loop. A fiber helix was used to characterize a monolithic cavity optomechanical device. Moreover, a microfluidic "roller coaster" was demonstrated, where microscale particles in water were optically trapped and transported by a fiber helix. Tapered fiber loops and helices can find various applications ranging from on-the-fly characterization of integrated photonic devices to particle manipulation and sorting in microfluidics.

Monolithic integration of elliptic-symmetry diffractive optical element on silicon-based 45 degrees micro-reflector.

PubMed

Lan, Hsiao-Chin; Hsiao, Hsu-Liang; Chang, Chia-Chi; Hsu, Chih-Hung; Wang, Chih-Ming; Wu, Mount-Learn

2009-11-09

A monolithically integrated micro-optical element consisting of a diffractive optical element (DOE) and a silicon-based 45 degrees micro-reflector is experimentally demonstrated to facilitate the optical alignment of non-coplanar fiber-to-fiber coupling. The slanted 45 degrees reflector with a depth of 216 microm is fabricated on a (100) silicon wafer by anisotropic wet etching. The DOE with a diameter of 174.2 microm and a focal length of 150 microm is formed by means of dry etching. Such a compact device is suitable for the optical micro-system to deflect the incident light by 90 degrees and to focus it on the image plane simultaneously. The measured light pattern with a spot size of 15 microm has a good agreement with the simulated result of the elliptic-symmetry DOE with an off-axis design for eliminating the strongly astigmatic aberration. The coupling efficiency is enhanced over 10-folds of the case without a DOE on the 45 degrees micro-reflector. This device would facilitate the optical alignment of non-coplanar light coupling and further miniaturize the volume of microsystem.

Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

NASA Astrophysics Data System (ADS)

Liu, Yang; Wang, Sheng; Liu, Huaping; Peng, Lian-Mao

2017-06-01

Single material-based monolithic optoelectronic integration with complementary metal oxide semiconductor-compatible signal processing circuits is one of the most pursued approaches in the post-Moore era to realize rapid data communication and functional diversification in a limited three-dimensional space. Here, we report an electrically driven carbon nanotube-based on-chip three-dimensional optoelectronic integrated circuit. We demonstrate that photovoltaic receivers, electrically driven transmitters and on-chip electronic circuits can all be fabricated using carbon nanotubes via a complementary metal oxide semiconductor-compatible low-temperature process, providing a seamless integration platform for realizing monolithic three-dimensional optoelectronic integrated circuits with diversified functionality such as the heterogeneous AND gates. These circuits can be vertically scaled down to sub-30 nm and operates in photovoltaic mode at room temperature. Parallel optical communication between functional layers, for example, bottom-layer digital circuits and top-layer memory, has been demonstrated by mapping data using a 2 × 2 transmitter/receiver array, which could be extended as the next generation energy-efficient signal processing paradigm.

1.3-microm optically-pumped semiconductor disk laser by wafer fusion.

PubMed

Lyytikäinen, Jari; Rautiainen, Jussi; Toikkanen, Lauri; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G

2009-05-25

We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 microm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 degrees C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.

Monolithic optical link in silicon-on-insulator CMOS technology.

PubMed

Dutta, Satadal; Agarwal, Vishal; Hueting, Raymond J E; Schmitz, Jurriaan; Annema, Anne-Johan

2017-03-06

This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n⁺p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.

Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

NASA Technical Reports Server (NTRS)

Leonard, Regis F. (Editor); Bhasin, Kul B. (Editor)

1991-01-01

Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure.

Integration of photoactive and electroactive components with vertical cavity surface emitting lasers

DOEpatents

Bryan, R.P.; Esherick, P.; Jewell, J.L.; Lear, K.L.; Olbright, G.R.

1997-04-29

A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications. 9 figs.

Integration of photoactive and electroactive components with vertical cavity surface emitting lasers

DOEpatents

Bryan, Robert P.; Esherick, Peter; Jewell, Jack L.; Lear, Kevin L.; Olbright, Gregory R.

1997-01-01

A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.

III-V Semiconductor Optical Micro-Ring Resonators

NASA Astrophysics Data System (ADS)

Grover, Rohit; Absil, Philippe P.; Ibrahim, Tarek A.; Ho, Ping-Tong

2004-05-01

We describe the theory of optical ring resonators, and our work on GaAs-AlGaAs and GaInAsP-InP optical micro-ring resonators. These devices are promising building blocks for future all-optical signal processing and photonic logic circuits. Their versatility allows the fabrication of ultra-compact multiplexers/demultiplexers, optical channel dropping filters, lasers, amplifiers, and logic gates (to name a few), which will enable large-scale monolithic integration for optics.

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

NASA Technical Reports Server (NTRS)

Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

2000-01-01

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Experimental demonstration of monolithically integrated 16 channel DFB laser array fabricated by nanoimprint lithography with AWG multiplexer and SOA for WDM-PON application

NASA Astrophysics Data System (ADS)

Zhao, Jianyi; Chen, Xin; Zhou, Ning; Huang, Xiaodong; Cao, Mingde; Wang, Lei; Liu, Wen

2015-03-01

A 16-channel monolithically integrated distributed feedback (DFB) laser array with arrayed waveguide gratings (AWGs) multiplexer and semiconductor optical amplifier (SOA) has been fabricated using nanoimprint technology. Selective lasing wavelength with 200 GHz frequency space has been obtained. The typical threshold current is between 20 mA and 30 mA. The output power is higher than 1 mW with 350 mA current in SOA. The side mode suppression ratio (SMSR) of the spectrum is better than 40 dB.

Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

PubMed

Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

2012-04-09

On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

Bioluminescent bioreporter integrated circuit devices and methods for detecting ammonia

DOEpatents

Simpson, Michael L [Knoxville, TN; Paulus, Michael J [Knoxville, TN; Sayler, Gary S [Blaine, TN; Applegate, Bruce M [West Lafayette, IN; Ripp, Steven A [Knoxville, TN

2007-04-24

Monolithic bioelectronic devices for the detection of ammonia includes a microorganism that metabolizes ammonia and which harbors a lux gene fused with a heterologous promoter gene stably incorporated into the chromosome of the microorganism and an Optical Application Specific Integrated Circuit (OASIC). The microorganism is generally a bacterium.

Advances in integrated photonic circuits for packet-switched interconnection

NASA Astrophysics Data System (ADS)

Williams, Kevin A.; Stabile, Ripalta

2014-03-01

Sustained increases in capacity and connectivity are needed to overcome congestion in a range of broadband communication network nodes. Packet routing and switching in the electronic domain are leading to unsustainable energy- and bandwidth-densities, motivating research into hybrid solutions: optical switching engines are introduced for massive-bandwidth data transport while the electronic domain is clocked at more modest GHz rates to manage routing. Commercially-deployed optical switching engines using MEMS technologies are unwieldy and too slow to reconfigure for future packet-based networking. Optoelectronic packet-compliant switch technologies have been demonstrated as laboratory prototypes, but they have so far mostly used discretely pigtailed components, which are impractical for control plane development and product assembly. Integrated photonics has long held the promise of reduced hardware complexity and may be the critical step towards packet-compliant optical switching engines. Recently a number of laboratories world-wide have prototyped optical switching circuits using monolithic integration technology with up to several hundreds of integrated optical components per chip. Our own work has focused on multi-input to multi-output switching matrices. Recently we have demonstrated 8×8×8λ space and wavelength selective switches using gated cyclic routers and 16×16 broadband switching chips using monolithic multi-stage networks. We now operate these advanced circuits with custom control planes implemented with FPGAs to explore real time packet routing in multi-wavelength, multi-port test-beds. We review our contributions in the context of state of the art photonic integrated circuit technology and packet optical switching hardware demonstrations.

Development of new dyes for use in integrated optical sensors.

PubMed

Citterio, D; Rásonyi, S; Spichiger, U E

1996-03-01

New chromoionophores have been developed, focused on NIR applications so that optode membranes may be used in monolithically integrated optical sensors. The wavelength of maximum absorbance has been estimated for a new model compound by the Pariser-Parr-Pople (PPP) method. Several cyanine type dyes have been tested as membrane chromoionophores. Membrane composition has been altered to overcome solubility problems. In this way, simple pH-sensitive optode membranes have been produced.

Rotated waveplates in integrated waveguide optics.

PubMed

Corrielli, Giacomo; Crespi, Andrea; Geremia, Riccardo; Ramponi, Roberta; Sansoni, Linda; Santinelli, Andrea; Mataloni, Paolo; Sciarrino, Fabio; Osellame, Roberto

2014-06-25

Controlling and manipulating the polarization state of a light beam is crucial in applications ranging from optical sensing to optical communications, both in the classical and quantum regime, and ultimately whenever interference phenomena are to be exploited. In addition, many of these applications present severe requirements of phase stability and greatly benefit from a monolithic integrated-optics approach. However, integrated devices that allow arbitrary transformations of the polarization state are very difficult to produce with conventional lithographic technologies. Here we demonstrate waveguide-based optical waveplates, with arbitrarily rotated birefringence axis, fabricated by femtosecond laser pulses. To validate our approach, we exploit this component to realize a compact device for the quantum state tomography of two polarization-entangled photons. This work opens perspectives for integrated manipulation of polarization-encoded information with relevant applications ranging from integrated polarimetric sensing to quantum key distribution.

GaAs MOEMS Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.

2003-03-01

Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vitalmore » step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.« less

A bioanalytical microsystem for protein and DNA sensing based on a monolithic silicon optoelectronic transducer

NASA Astrophysics Data System (ADS)

Misiakos, K.; Petrou, P. S.; Kakabakos, S. E.; Ruf, H. H.; Ehrentreich-Förster, E.; Bier, F. F.

2005-01-01

A bioanalytical microsystem that is based on a monolithic silicon optical transducer and a microfluidic module and it is appropriate for real-time sensing of either DNA or protein analytes is presented. The optical transducer monolithically integrates silicon avalanche diodes as light sources, silicon nitride optical fibers and detectors and efficiently intercouples these optical elements through a self-alignment technique. After hydrophilization and silanization of the transducer surface, the biomolecular probes are immobilized through physical adsorption. Detection is performed through reaction of the immobilized biomolecules with gold nanoparticle labeled counterpart molecules. The binding of these molecules within the evanescent field at the surface of the optical fiber cause attenuated total reflection of the waveguided modes and reduction of the detector photocurrent. Using the developed microsystem, determination of single nucleotide polymorphism (SNP) in the gene of the human phenol sulfotransferase SULT1A1 was achieved. Full-matching hybrid resulted in 4-5 times higher signals compared to the mismatched hybrid after hybridization and dissociation processes. The protein sensing abilities of the developed microsystem were also investigated through a non-competitive assay for the determination of the MB isoform of creatine kinase enzyme (CK-MB) that is a widely used cardiac marker.

Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

NASA Astrophysics Data System (ADS)

Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

2017-12-01

A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

NASA Astrophysics Data System (ADS)

Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

2012-09-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously considered inaccessible.

Recent developments in electroabsorption modulators at Acreo Swedish ICT

NASA Astrophysics Data System (ADS)

Wang, Qin; Zhang, Andy Z.; Almqvist, Susanne; Junique, Stephane; Noharet, Bertrand; Platt, Duncan; Salter, Michael; Andersson, Jan Y.

2015-03-01

Three types of electroabsorption modulators (EAMs) based on III-V semiconductor multiple quantum wells (MQW) are presented in this work. One is a novel monolithic integration traveling-wave EAM for an analog optical transmitter/transceiver to achieve integrated photonic mm-wave functions for broadband connectivity. Another one is composed of an integrated EAM 1D array in a photonic beam-former as a Ku-band phased array antenna for seamless aeronautical networking through integration of data links, radios, and antennas. The third one addresses the use of MQW EAMs in free space optical links through biological tissue for transcutaneous communication.

Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection

PubMed Central

Hsu*, Shih-Hsiang

2010-01-01

To fully utilize GaAs high drift mobility, techniques to monolithically integrate In0.53Ga0.47As p-i-n photodetectors with GaAs based optical waveguides using total internal reflection coupling are reviewed. Metal coplanar waveguides, deposited on top of the polyimide layer for the photodetector’s planarization and passivation, were then uniquely connected as a bridge between the photonics and electronics to illustrate the high-speed monitoring function. The photodetectors were efficiently implemented and imposed on the echelle grating circle for wavelength division multiplexing monitoring. In optical filtering performance, the monolithically integrated photodetector channel spacing was 2 nm over the 1,520–1,550 nm wavelength range and the pass band was 1 nm at the −1 dB level. For high-speed applications the full-width half-maximum of the temporal response and 3-dB bandwidth for the reflectively coupled waveguide photodetectors were demonstrated to be 30 ps and 11 GHz, respectively. The bit error rate performance of this integrated photodetector at 10 Gbit/s with 27-1 long pseudo-random bit sequence non-return to zero input data also showed error-free operation. PMID:22163502

Heterogeneous Integration for Reduced Phase Noise and Improved Reliability of Semiconductor Lasers

NASA Astrophysics Data System (ADS)

Srinivasan, Sudharsanan

Significant savings in cost, power and space are possible in existing optical data transmission networks, sensors and metrology equipment through photonic integration. Photonic integration can be broadly classified into two categories, hybrid and monolithic integration. The former involves assembling multiple single functionality optical devices together into a single package including any optical coupling and/or electronic connections. On the other hand monolithic integration assembles many devices or optical functionalities on a single chip so that all the optical connections are on chip and require no external alignment. This provides a substantial improvement in reliability and simplifies testing. Monolithic integration has been demonstrated on both indium phosphide (InP) and silicon (Si) substrates. Integration on larger 300mm Si substrates can further bring down the cost and has been a major area of research in recent years. Furthermore, with increasing interest from industry, the hybrid silicon platform is emerging as a new technology for integrating various active and passive optical elements on a single chip. This is both in the interest of bringing down manufacturing cost through scaling along with continued improvement in performance and to produce multi-functional photonic integrated circuits (PIC). The goal of this work is twofold. First, we show four laser demonstrations that use the hybrid silicon platform to lower phase noise due to spontaneous emission, based on the following two techniques, viz. confinement factor reduction and negative optical feedback. The first two demonstrations are of mode-locked lasers and the next two are of tunable lasers. Some of the key results include; (a) 14dB white frequency noise reduction of a 20GHz radio-frequency (RF) signal from a harmonically mode-locked long cavity laser with greater than 55dB supermode noise suppression, (b) 8dB white frequency noise reduction from a colliding pulse mode-locked laser by reducing the number of quantum wells and a further 6dB noise reduction using coherent photon seeding from long on-chip coupled cavity, (c) linewidth reduction of a tunable laser down to 160kHz using negative optical feedback from coupled ring resonator mirrors, and (d) linewidth reduction of a widely tunable laser down to 50kHz using on-chip coupled cavity feedback effect. Second, we present the results of a reliability study conducted to investigate the influence of molecular wafer bonding between Si and InP on the lifetime of distributed feedback lasers, a common laser source used in optical communication. No degradation in lasing threshold or slope efficiency was observed after aging the lasers for 5000hrs at 70°C and 2500hrs at 85°C. However, among the three chosen bonding interface layer options, the devices with an interface superlattice layer showed a higher yield for lasers and lower dark current values in the on-chip monitor photodiodes after aging.

Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Jingwen; Sun, Xiankai, E-mail: xksun@cuhk.edu.hk; Shun Hing Institute of Advanced Engineering, The Chinese University of Hong Kong, Shatin, New Territories

2016-04-11

Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with themore » extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.« less

Quasi-monolithic tunable optical resonator

NASA Technical Reports Server (NTRS)

Arbore, Mark (Inventor); Tapos, Francisc (Inventor)

2003-01-01

An optical resonator has a piezoelectric element attached to a quasi-monolithic structure. The quasi-monolithic structure defines an optical path. Mirrors attached to the structure deflect light along the optical path. The piezoelectric element controllably strains the quasi-monolithic structure to change a length of the optical path by about 1 micron. A first feedback loop coupled to the piezoelectric element provides fine control over the cavity length. The resonator may include a thermally actuated spacer attached to the cavity and a mirror attached to the spacer. The thermally actuated spacer adjusts the cavity length by up to about 20 microns. A second feedback loop coupled to the sensor and heater provides a coarse control over the cavity length. An alternative embodiment provides a quasi-monolithic optical parametric oscillator (OPO). This embodiment includes a non-linear optical element within the resonator cavity along the optical path. Such an OPO configuration is broadly tunable and capable of mode-hop free operation for periods of 24 hours or more.

Dual-beam optical trapping of cells in an optofluidic device fabricated by femtosecond lasers

NASA Astrophysics Data System (ADS)

Bellini, N.; Bragheri, F.; Vishnubhatla, K. C.; Ferrara, L.; Minzioni, P.; Cerullo, G.; Ramponi, R.; Cristiani, I.; Osellame, R.

2010-02-01

We present design and optimization of an optofluidic monolithic chip, able to provide optical trapping and controlled stretching of single cells. The chip is fabricated in a fused silica glass substrate by femtosecond laser micromachining, which can produce both optical waveguides and microfluidic channels with great accuracy. Versatility and three-dimensional capabilities of this fabrication technology provide the possibility to fabricate circular cross-section channels with enlarged access holes for an easy connection with an external fluidic circuit. Moreover, a new fabrication procedure adopted allows the demonstration of microchannels with a square cross-section, thus guaranteeing an improved quality of the trapped cell images. Optical trapping and stretching of single red blood cells are demonstrated, thus proving the effectiveness of the proposed device as a monolithic optical stretcher. We believe that femtosecond laser micromachining represents a promising technique for the development of multifunctional integrated biophotonic devices that can be easily coupled to a microscope platform, thus enabling a complete characterization of the cells under test.

Fabrication of a wide-field NIR integral field unit for SWIMS using ultra-precision cutting

NASA Astrophysics Data System (ADS)

Kitagawa, Yutaro; Yamagata, Yutaka; Morita, Shin-ya; Motohara, Kentaro; Ozaki, Shinobu; Takahashi, Hidenori; Konishi, Masahiro; Kato, Natsuko M.; Kobayakawa, Yutaka; Terao, Yasunori; Ohashi, Hirofumi

2016-07-01

We describe overview of fabrication methods and measurement results of test fabrications of optical surfaces for an integral field unit (IFU) for Simultaneous color Wide-field Infrared Multi-object Spectrograph, SWIMS, which is a first-generation instrument for the University of Tokyo Atacama Observatory 6.5-m telescope. SWIMS-IFU provides entire near-infrared spectrum from 0.9 to 2.5 μm simultaneously covering wider field of view of 17" × 13" compared with current near-infrared IFUs. We investigate an ultra-precision cutting technique to monolithically fabricate optical surfaces of IFU optics such as an image slicer. Using 4- or 5-axis ultra precision machine we compare the milling process and shaper cutting process to find the best way of fabrication of image slicers. The measurement results show that the surface roughness almost satisfies our requirement in both of two methods. Moreover, we also obtain ideal surface form in the shaper cutting process. This method will be adopted to other mirror arrays (i.e. pupil mirror and slit mirror, and such monolithic fabrications will also help us to considerably reduce alignment procedure of each optical elements.

Millimeter-wave monolithic integrated circuit characterization by a picosecond optoelectronic technique

NASA Astrophysics Data System (ADS)

Hung, Hing-Loi A.; Smith, Thane; Huang, Ho C.; Polak-Dingels, Penny; Webb, Kevin J.

1989-08-01

The characterization of microwave and millimeter-wave monolithic integrated circits (MIMICs) using picosecond pulse-sampling techniques is developed with emphasis on improving broadband coverage and measurement accuracy. GaAs photoconductive swithces are used for signal generation and sampling operations. The measured time-domain response allows the spectral transfer function of the MIMIC to be obtained. This measurement technique is verified by characterization of the frequency response (magnitude and phase) of a reference 50-ohm microstrip line and a two-stage Ka-band MIMIC amplifier. The measured broadband results agree with those obtained from conventional frequency-domain measurements using a network analyzer. The application of this optical technique to on-wafer MIMIC characterization is described.

Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

NASA Technical Reports Server (NTRS)

Kim, J. H.; Katz, J.; Lin, S. H.; Psaltis, D.

1989-01-01

A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.

PubMed

Jeong, Seonghoon; Oh, Seung Kyu; Ryou, Jae-Hyun; Ahn, Kwang-Soon; Song, Keun Man; Kim, Hyunsoo

2018-01-31

Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level without the wavelength conversion through packaged phosphors or chip integration for photon recycling are of particular importance to produce compact, cost-competitive, and smart lighting sources. In this study, monolithic white LEDs were developed based on ZnO/GaN semiconductor heterojunctions. The electroluminescence (EL) wavelength of the ZnO/GaN heterojunction could be tuned by a post-thermal annealing process, causing the generation of an interfacial Ga 2 O 3 layer. Ultraviolet, violet-bluish, and greenish-yellow broad bands were observed from n-ZnO/p-GaN without an interfacial layer, whereas a strong greenish-yellow band emission was the only one observed from that with an interfacial layer. By controlled integration of ZnO/GaN heterojunctions with different postannealing conditions, monolithic white LED was demonstrated with color coordinates in the range (0.3534, 0.3710)-(0.4197, 0.4080) and color temperatures of 4778-3349 K in the Commission Internationale de l'Eclairage 1931 chromaticity diagram. Furthermore, the monolithic white LED produced approximately 2.1 times higher optical output power than a conventional ZnO/GaN heterojunction due to the carrier confinement effect at the Ga 2 O 3 /n-ZnO interface.

Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver.

PubMed

Shin, Jonghyun; Bhattacharya, Pallab; Xu, Jian; Váró, György

2004-10-01

A monolithically integrated bacteriorhodopsin-semiconductor phototransceiver is demonstrated for the first time to the authors' knowledge. In this novel biophotonic optical interconnect, the input photoexcitation is detected by bacteriorhodopsin (bR) that has been selectively deposited onto the gate of a GaAs-based field-effect transistor. The photovoltage developed across the bR is converted by the transistor into an amplified photocurrent, which drives an integrated light-emitting diode with a Ga0.37Al0.63As active region. Advantage is taken of the high-input impedance of the field-effect transistor, which matches the high internal resistance of bR. The input and output wavelengths are 594 and 655 nm, respectively. The transient response of the optoelectronic circuit to modulated input light has also been studied.

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Microwave generation in an electro-absorption modulator integrated with a DFB laser subject to optical injection.

PubMed

Zhu, Ning Hua; Zhang, Hong Guang; Man, Jiang Wei; Zhu, Hong Liang; Ke, Jian Hong; Liu, Yu; Wang, Xin; Yuan, Hai Qing; Xie, Liang; Wang, Wei

2009-11-23

This paper presents a new technique to generate microwave signal using an electro-absorption modulator (EAM) integrated with a distributed feedback (DFB) laser subject to optical injection. Experiments show that the frequency of the generated microwave can be tuned by changing the wavelength of the external laser or adjusting the bias voltage of the EAM. The frequency response of the EAM is studied and found to be unsmooth due to packaging parasitic effects and four-wave mixing effect occurring in the active layer of the DFB laser. It is also demonstrated that an EA modulator integrated in between two DFB lasers can be used instead of the EML under optical injection. This integrated chip can be used to realize a monolithically integrated tunable microwave source.

Monolithic device for modelocking and stabilization of frequency combs.

PubMed

Lee, C-C; Hayashi, Y; Silverman, K L; Feldman, A; Harvey, T; Mirin, R P; Schibli, T R

2015-12-28

We demonstrate a device that integrates a III-V semiconductor saturable absorber mirror with a graphene electro-optic modulator, which provides a monolithic solution to modelocking and noise suppression in a frequency comb. The device offers a pure loss modulation bandwidth exceeding 5 MHz and only requires a low voltage driver. This hybrid device provides not only compactness and simplicity in laser cavity design, but also small insertion loss, compared to the previous metallic-mirror-based modulators. We believe this work paves the way to portable and fieldable phase-coherent frequency combs.

Integrated optical tamper sensor with planar waveguide

DOEpatents

Carson, Richard F.; Casalnuovo, Stephen A.

1993-01-01

A monolithic optical tamper sensor, comprising an optical emitter and detector, connected by an optical waveguide and placed into the critical entry plane of an enclosed sensitive region, the tamper sensor having a myriad of scraps of a material optically absorbent at the wavelength of interest, such that when the absorbent material is in place on the waveguide, an unique optical signature can be recorded, but when entry is attempted into the enclosed sensitive region, the scraps of absorbent material will be displaced and the optical/electrical signature of the tamper sensor will change and that change can be recorded.

Integrated optical tamper sensor with planar waveguide

DOEpatents

Carson, R.F.; Casalnuovo, S.A.

1993-01-05

A monolithic optical tamper sensor, comprising an optical emitter and detector, connected by an optical waveguide and placed into the critical entry plane of an enclosed sensitive region, the tamper sensor having a myriad of scraps of a material optically absorbent at the wavelength of interest, such that when the absorbent material is in place on the waveguide, an unique optical signature can be recorded, but when entry is attempted into the enclosed sensitive region, the scraps of absorbent material will be displaced and the optical/electrical signature of the tamper sensor will change and that change can be recorded.

Hybrid integrated single-wavelength laser with silicon micro-ring reflector

NASA Astrophysics Data System (ADS)

Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian

2018-02-01

A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.

Compact and high-sensitivity 100-Gb/s (4 × 25 Gb/s) APD-ROSA with a LAN-WDM PLC demultiplexer.

PubMed

Yoshimatsu, Toshihide; Nada, Masahiro; Oguma, Manabu; Yokoyama, Haruki; Ohno, Tetsuichiro; Doi, Yoshiyuki; Ogawa, Ikuo; Takahashi, Hiroshi; Yoshida, Eiji

2012-12-10

We demonstrate an integrated 100 GbE receiver optical sub-assembly (ROSA) that incorporates a monolithic four-channel avalanche photodiode (APD) array and a planer lightwave circuit (PLC) based LAN-WDM demultiplexer. A record minimum receiver sensitivity of -20 dBm and 50-km error-free SMF transmission without an optical amplifier have been achieved.

Integration of a UV curable polymer lens and MUMPs structures on a SOI optical bench

NASA Astrophysics Data System (ADS)

Hsieh, Jerwei; Hsiao, Sheng-Yi; Lai, Chun-Feng; Fang, Weileun

2007-08-01

This work presents the design concept of integrating a polymer lens, poly-Si MUMPs and single-crystal-silicon HARM structures on a SOI wafer to form a silicon optical bench. This approach enables the monolithic integration of various optical components on the wafer so as to improve the design flexibility of the silicon optical bench. Fabrication processes, including surface and bulk micromachining on the SOI wafer, have been established to realize bi-convex spherical polymer lenses with in-plane as well as out-of-plane optical axes. In addition, a micro device consisting of an in-plane polymer lens, a thick fiber holder and a mechanical shutter driven by an electrothermal actuator is also demonstrated using the present approach. In summary, this study significantly improves the design flexibility as well as the functions of SiOBs.

Optical beam forming techniques for phased array antennas

NASA Technical Reports Server (NTRS)

Wu, Te-Kao; Chandler, C.

1993-01-01

Conventional phased array antennas using waveguide or coax for signal distribution are impractical for large scale implementation on satellites or spacecraft because they exhibit prohibitively large system size, heavy weight, high attenuation loss, limited bandwidth, sensitivity to electromagnetic interference (EMI) temperature drifts and phase instability. However, optical beam forming systems are smaller, lighter, and more flexible. Three optical beam forming techniques are identified as applicable to large spaceborne phased array antennas. They are (1) the optical fiber replacement of conventional RF phased array distribution and control components, (2) spatial beam forming, and (3) optical beam splitting with integrated quasi-optical components. The optical fiber replacement and the spatial beam forming approaches were pursued by many organizations. Two new optical beam forming architectures are presented. Both architectures involve monolithic integration of the antenna radiating elements with quasi-optical grid detector arrays. The advantages of the grid detector array in the optical process are the higher power handling capability and the dynamic range. One architecture involves a modified version of the original spatial beam forming approach. The basic difference is the spatial light modulator (SLM) device for controlling the aperture field distribution. The original liquid crystal light valve SLM is replaced by an optical shuffling SLM, which was demonstrated for the 'smart pixel' technology. The advantages are the capability of generating the agile beams of a phased array antenna and to provide simultaneous transmit and receive functions. The second architecture considered is the optical beam splitting approach. This architecture involves an alternative amplitude control for each antenna element with an optical beam power divider comprised of mirrors and beam splitters. It also implements the quasi-optical grid phase shifter for phase control and grid amplifier for RF power. The advantages are no SLM is required for this approach, and the complete antenna system is capable of full monolithic integration.

Near-to-eye electroholography via guided-wave acousto-optics for augmented reality

NASA Astrophysics Data System (ADS)

Jolly, Sundeep; Savidis, Nickolaos; Datta, Bianca; Smalley, Daniel; Bove, V. Michael

2017-03-01

Near-to-eye holographic displays act to directly project wavefronts into a viewer's eye in order to recreate 3-D scenes for augmented or virtual reality applications. Recently, several solutions for near-to-eye electroholography have been proposed based on digital spatial light modulators in conjunction with supporting optics, such as holographic waveguides for light delivery; however, such schemes are limited by the inherent low space-bandwidth product available with current digital SLMs. In this paper, we depict a fully monolithic, integrated optical platform for transparent near-to-eye holographic display requiring no supporting optics. Our solution employs a guided-wave acousto-optic spatial light modulator implemented in lithium niobate in conjunction with an integrated Bragg-regime reflection volume hologram.

Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

NASA Technical Reports Server (NTRS)

Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. B.

1990-01-01

Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

High operating temperature nBn detector with monolithically integrated microlens

NASA Astrophysics Data System (ADS)

Soibel, Alexander; Keo, Sam A.; Fisher, Anita; Hill, Cory J.; Luong, Edward; Ting, David Z.; Gunapala, Sarath D.; Lubyshev, Dmitri; Qiu, Yueming; Fastenau, Joel M.; Liu, Amy W. K.

2018-01-01

We demonstrate an InAsSb nBn detector monolithically integrated with a microlens fabricated on the back side of the detector. The increase in the optical collection area of the detector resulted in a five-fold enhancement of the responsivity to Rp = 5.5 A/W. The responsivity increases further to Rp = 8.5 A/W with an antireflection coating. These 4.5 μm cut-off wavelength antireflection coated detectors with microlenses exhibited a detectivity of D* (λ) = 2.7 × 1010 cmHz0.5/W at T = 250 K, which can be reached easily with a single-stage thermoelectric cooler or with a passive radiator in the space environment. This represents a 25 K increase in the operating temperature of these devices compared to the uncoated detectors without an integrated microlens.

Integrated Photonic Comb Generation: Applications in Coherent Communication and Sensing

NASA Astrophysics Data System (ADS)

Parker, John S.

Integrated photonics combines many optical components including lasers, modulators, waveguides, and detectors in close proximity via homogeneous (monolithic) or heterogeneous (using multiple materials) integration. This improves stability for interferometers and lasers, reduces the occurrence of unwanted reflections, and it avoids coupling losses between different components as they are on the same chip. Thus, less power is needed to compensate for these added losses, and less heat needs to be removed due to these power savings. In addition, integration allows the many components that comprise a system to be fabricated together, thereby reducing the cost per system and allowing rapid scaling in production throughput. Integrated optical combs have many applications including: metrology, THz frequency generation, arbitrary waveform generation, optical clocks, photonic analog-to-digital converters, sensing (imaging), spectroscopy, and data communication. A comb is a set of optical sources evenly spaced in frequency. Several methods of comb generation including mode-locking and optical parametric oscillation produce phase-matched optical outputs with a fixed phase relationship between the frequency lines. When the absolute frequency of a single comb line is stabilized along with the frequency spacing between comb lines, absolute phase and frequency precision can be achieved over the entire comb bandwidth. This functionality provides tremendous benefits to many applications such as coherent communication and optical sensing. The goals for this work were achieving a broad comb bandwidth and noise reduction, i.e., frequency and phase stability. Integrated mode-locked lasers on the InGaAsP/InP material platform were chosen, as they could be monolithically integrated with the wide range of highly functional and versatile photonic integrated circuits (PICs) previously demonstrated on this platform at UCSB. Gain flattening filters were implemented to increase the comb bandwidths to 2.5 THz. Active mode-locking with an RF source was used to precisely set the frequency spacing between comb lines with better than 10 Hz accuracy. An integrated optical phase-locked loop (OPLL) for the comb was designed, built, and tested. The OPLL fixed a single comb line to a stable single linewidth laser, demonstrating a ˜430 Hz FWHM optical linewidth on the locked comb line and 20º RMS phase deviation between the comb and optical reference. The free-running linewidth is 50--100 MHz, demonstrating over 50 dB improvement in optical linewidth via locking. An integrated tunable laser (SG-DBR) with an OPLL was phase-locked to a comb source with a fixed offset frequency, thus showing the potential for using a comb with SG-DBRs as a compact frequency synthesizer.

Development of optically pumped DBR-free semiconductor disk lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Sheik-Bahae, Mansoor

2017-03-01

Semiconductor disk lasers (SDLs) are attractive for applications requiring good beam quality, wavelength versatility, and high output powers. Typical SDLs utilize the active mirror geometry, where a semiconductor DBR is integrated with the active region by growth or post-growth bonding. This imposes restrictions for the SDL design, like material system choice, thermal management, and effective gain bandwidth. In DBR-free geometry, these restrictions can be alleviated. An integrated gain model predicts DBR-free geometry with twice the gain bandwidth of typical SDLs, which has been experimentally verified with active regions near 1 μm and 1.15 μm. The lift-off and bonding technique enables the integration of semiconductor active regions with arbitrary high quality substrates, allowing novel monolithic geometries. Bonding an active region onto a straight side of a commercial fused silica right angle prism, and attaching a high reflectivity mirror onto the hypotenuse side, with quasi CW pumping at 780 nm, lasing operation was achieved at 1037 nm with 0.2 mW average power at 1.6 mW average pump power. Laser dynamics show that thermal lens generation in the active region bottlenecks the laser efficiency. Investigations on total internal reflection based monolithic ring cavities are ongoing. These geometries would allow the intracavity integration of 2D materials or other passive absorbers, which could be relevant for stable mode locking. Unlike typical monolithic microchip SDLs, with the evanescent wave coupling technique, these monolithic geometries allow variable coupling efficiency.

Waveguide device and method for making same

DOEpatents

Forman, Michael A [San Francisco, CA

2007-08-14

A monolithic micromachined waveguide device or devices with low-loss, high-power handling, and near-optical frequency ranges is set forth. The waveguide and integrated devices are capable of transmitting near-optical frequencies due to optical-quality sidewall roughness. The device or devices are fabricated in parallel, may be mass produced using a LIGA manufacturing process, and may include a passive component such as a diplexer and/or an active capping layer capable of particularized signal processing of the waveforms propagated by the waveguide.

Detection of radio-frequency modulated optical signals by two and three terminal microwave devices

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Simons, R. N.; Wojtczuk, S.

1987-01-01

An interdigitated photoconductor (two terminal device) on GaAlAs/GaAs heterostructure was fabricated and tested by an electro-optical sampling technique. Further, the photoresponse of GaAlAs/GaAs HEMT (three terminal device) was obtained by illuminating the device with an optical signal modulated up to 8 GHz. Gain-bandwidth product, response time, and noise properties of photoconductor and HEMT devices were obtained. Monolithic integration of these photodetectors with GaAs microwave devices for optically controlled phased array antenna applications is discussed.

Fabrication and Characterization of a Long Wavelength InP HBT-Based Optical Receiver

NASA Technical Reports Server (NTRS)

Roenker, Kenneth P.

1997-01-01

Development of a high speed photodetector - the InP-based phototransistor (HPT) for use in optical receivers for microwave signal distribution for satellite phased array antennas is addressed. Currently, p-i-n photodetectors are used because of their compatibility with the heterojunction bipolar transistor (HBT), but their performance limits the bandwidth of these optical receivers. The HPT photodetector was investigated here as an alternative photodetector for monolithic integration with heterojunction bipolar transistor amplifiers in long wavelength (1.3 micron), gigahertz (GHz) frequency optical receivers.

High responsivity coherent photonic receiver integrating an SOA, a 90° hybrid, and high speed UTC photodiodes.

PubMed

Santini, Guillaume; Caillaud, Christophe; Paret, Jean-François; Pommereau, Frederic; Mekhazni, Karim; Calo, Cosimo; Achouche, Mohand

2017-10-16

We demonstrate a single polarization monolithically integrated coherent receiver on an InP substrate with a SOA preamplifier, a 90° optical hybrid, and four 40 GHz UTC photodiodes. Record performances with responsivity above 4 A/W with low imbalance <1 dB and error free detection of 32 Gbaud QPSK signals were simultaneously demonstrated.

Chiral monolithic absorbent constructed by optically active helical-substituted polyacetylene and graphene oxide: preparation and chiral absorption capacity.

PubMed

Li, Weifei; Wang, Bo; Yang, Wantai; Deng, Jianping

2015-02-01

Chiral monolithic absorbent is successfully constructed for the first time by using optically active helical-substituted polyacetylene and graphene oxide (GO). The preparative strategy is facile and straightforward, in which chiral-substituted acetylene monomer (Ma), cross-linker (Mb), and alkynylated GO (Mc) undergo copolymerization to form the desired monolithic absorbent in quantitative yield. The resulting monoliths are characterized by circular dichroism, UV-vis absorption, scanning electron microscopy (SEM), FT-IR, Raman, energy-dispersive spectrometer (EDS), X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET), XPS, and thermogravimetric analysis (TGA) techniques. The polymer chains derived from Ma form chiral helical structures and thus provide optical activity to the monoliths, while GO sheets contribute to the formation of porous structures. The porous structure enables the monolithic absorbents to demonstrate a large swelling ratio in organic solvents, and more remarkably, the helical polymer chains provide optical activity and further enantio-differentiating absorption ability. The present study establishes an efficient and versatile methodology for preparing novel functional materials, in particular monolithic chiral materials based on substituted polyacetylene and GO. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Miniature optical planar camera based on a wide-angle metasurface doublet corrected for monochromatic aberrations

PubMed Central

Arbabi, Amir; Arbabi, Ehsan; Kamali, Seyedeh Mahsa; Horie, Yu; Han, Seunghoon; Faraon, Andrei

2016-01-01

Optical metasurfaces are two-dimensional arrays of nano-scatterers that modify optical wavefronts at subwavelength spatial resolution. They are poised to revolutionize optics by enabling complex low-cost systems where multiple metasurfaces are lithographically stacked and integrated with electronics. For imaging applications, metasurface stacks can perform sophisticated image corrections and can be directly integrated with image sensors. Here we demonstrate this concept with a miniature flat camera integrating a monolithic metasurface lens doublet corrected for monochromatic aberrations, and an image sensor. The doublet lens, which acts as a fisheye photographic objective, has a small f-number of 0.9, an angle-of-view larger than 60° × 60°, and operates at 850 nm wavelength with 70% focusing efficiency. The camera exhibits nearly diffraction-limited image quality, which indicates the potential of this technology in the development of optical systems for microscopy, photography, and computer vision. PMID:27892454

Miniature optical planar camera based on a wide-angle metasurface doublet corrected for monochromatic aberrations

NASA Astrophysics Data System (ADS)

Arbabi, Amir; Arbabi, Ehsan; Kamali, Seyedeh Mahsa; Horie, Yu; Han, Seunghoon; Faraon, Andrei

2016-11-01

Optical metasurfaces are two-dimensional arrays of nano-scatterers that modify optical wavefronts at subwavelength spatial resolution. They are poised to revolutionize optics by enabling complex low-cost systems where multiple metasurfaces are lithographically stacked and integrated with electronics. For imaging applications, metasurface stacks can perform sophisticated image corrections and can be directly integrated with image sensors. Here we demonstrate this concept with a miniature flat camera integrating a monolithic metasurface lens doublet corrected for monochromatic aberrations, and an image sensor. The doublet lens, which acts as a fisheye photographic objective, has a small f-number of 0.9, an angle-of-view larger than 60° × 60°, and operates at 850 nm wavelength with 70% focusing efficiency. The camera exhibits nearly diffraction-limited image quality, which indicates the potential of this technology in the development of optical systems for microscopy, photography, and computer vision.

A Microwave Photonic Interference Canceller: Architectures, Systems, and Integration

NASA Astrophysics Data System (ADS)

Chang, Matthew P.

This thesis is a comprehensive portfolio of work on a Microwave Photonic Self-Interference Canceller (MPC), a specialized optical system designed to eliminate interference from radio-frequency (RF) receivers. The novelty and value of the microwave photonic system lies in its ability to operate over bandwidths and frequencies that are orders of magnitude larger than what is possible using existing RF technology. The work begins, in 2012, with a discrete fiber-optic microwave photonic canceller, which prior work had demonstrated as a proof-of-concept, and culminates, in 2017, with the first ever monolithically integrated microwave photonic canceller. With an eye towards practical implementation, the thesis establishes novelty through three major project thrusts. (Fig. 1): (1) Extensive RF and system analysis to develop a full understanding of how, and through what mechanisms, MPCs affect an RF receiver. The first investigations of how a microwave photonic canceller performs in an actual wireless environment and a digital radio are also presented. (2) New architectures to improve the performance and functionality of MPCs, based on the analysis performed in Thrust 1. A novel balanced microwave photonic canceller architecture is developed and experimentally demonstrated. The balanced architecture shows significant improvements in link gain, noise figure, and dynamic range. Its main advantage is its ability to suppress common-mode noise and reduce noise figure by increasing the optical power. (3) Monolithic integration of the microwave photonic canceller into a photonic integrated circuit. This thrust presents the progression of integrating individual discrete devices into their semiconductor equivalent, as well as a full functional and RF analysis of the first ever integrated microwave photonic canceller.

10Gbps monolithic silicon FTTH transceiver for PON

NASA Astrophysics Data System (ADS)

Zhang, J.; Liow, T. Y.; Lo, G. Q.; Kwong, D. L.

2010-05-01

We propose a new passive optical network (PON) configuration and a novel silicon photonic transceiver architecture for optical network unit (ONU), eliminating the need for an internal laser source in ONU. We adopt dual fiber network configuration. The internal light source in each of the ONUs is eliminated. Instead, an extra seed laser source in the optical line termination (OLT) operates in continuous wave mode to serve the ONUs in the PON as a shared and centralized laser source. λ1 from OLT Tx and λ2 from the seed laser are combined by using a WDM combiner and connected to serve the multiple ONUs through the downstream fibers. The ONUs receive the data in λ1. Meanwhile, the ONUs encode and transmit data in λ2, which are sent back to OLT. The monolithic ONU transceiver contains a wavelength-division-multiplexing (WDM) filter component, a silicon modulator and a Ge photo-detector. The WDM in ONU selectively guides λ1 to the Ge-PD where the data in λ1 are detected and converted to electrical signals, and λ2 to the transmitter where the light is modulated by upstream data. The modulated optical signals in λ2 from ONUs are connected back to OLT through upstream fibers. The monolithic ONU transceiver chip size is only 2mm by 4mm. The crosstalk between the Tx and Rx is measured to be less than -20dB. The transceiver chip is integrated on a SFP+ transceiver board. Both Tx and Rx demonstrated data rate capabilities of up to 10Gbps. By implementing this scheme, the ONU transceiver size can be significantly reduced and the assembly processes will be greatly simplified. The results demonstrate the feasibility of mass manufacturing monolithic silicon ONU transceivers via low cost

8-Meter UV/Optical Space Telescope

NASA Technical Reports Server (NTRS)

Stahl, H. Philip

2008-01-01

This slide presentation proposes using the unprecedented capability of the planned Ares V launch vehicle, to place a 8 meter monolithic space telescope at the Earth-Sun L2 point. This new capability enables a new design pardigm -- simplicity. The six to eight meter class telescope with a massive high Technical Readiness Level ground observatory class monolithic primary mirror has been determined feasible. The proposed design, structural analysis, spacecraft design and shroud integration, thermal analysis, propulsion system, guidance navigation and pointing control assumptions about the avionics, and power systems, operational lifetime, and the idea of in-space servicing are reviewed.

Vertical and lateral heterogeneous integration

NASA Astrophysics Data System (ADS)

Geske, Jon; Okuno, Yae L.; Bowers, John E.; Jayaraman, Vijay

2001-09-01

A technique for achieving large-scale monolithic integration of lattice-mismatched materials in the vertical direction and the lateral integration of dissimilar lattice-matched structures has been developed. The technique uses a single nonplanar direct-wafer-bond step to transform vertically integrated epitaxial structures into lateral epitaxial variation across the surface of a wafer. Nonplanar wafer bonding is demonstrated by integrating four different unstrained multi-quantum-well active regions lattice matched to InP on a GaAs wafer surface. Microscopy is used to verify the quality of the bonded interface, and photoluminescence is used to verify that the bonding process does not degrade the optical quality of the laterally integrated wells. The authors propose this technique as a means to achieve greater levels of wafer-scale integration in optical, electrical, and micromechanical devices.

Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

NASA Astrophysics Data System (ADS)

Yang, Y. J.; Dziura, T. G.; Bardin, T.; Wang, S. C.; Fernandez, R.; Liao, Andrew S. H.

1993-02-01

Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy at the same time. The VCSELs with a 10-micron diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (CW) maximum power of 1.1 mW. The MESFETs with a 3-micron gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.

Prototyping of MWIR MEMS-based optical filter combined with HgCdTe detector

NASA Astrophysics Data System (ADS)

Kozak, Dmitry A.; Fernandez, Bautista; Velicu, Silviu; Kubby, Joel

2010-02-01

In the past decades, there have been several attempts to create a tunable optical detector with operation in the infrared. The drive for creating such a filter is its wide range of applications, from passive night vision to biological and chemical sensors. Such a device would combine a tunable optical filter with a wide-range detector. In this work, we propose using a Fabry-Perot interferometer centered in the mid-wave infrared (MWIR) spectrum with an HgCdTe detector. Using a MEMS-based interferometer with an integrated Bragg stack will allow in-plane operation over a wide range. Because such devices have a tendency to warp, creating less-than-perfect optical surfaces, the Fabry-Perot interferometer is prototyped using the SOI-MUMPS process to ensure desirable operation. The mechanical design is aimed at optimal optical flatness of the moving membranes and a low operating voltage. The prototype is tested for these requirements. An HgCdTe detector provides greater performance than a pyroelectic detector used in some previous work, allowing for lower noise, greater detection speed and higher sensitivity. Both a custom HgCdTe detector and commercially available pyroelectric detector are tested with commercial optical filter. In previous work, monolithic integration of HgCdTe detectors with optical filters proved to be problematic. Part of this work investigates the best approach to combining these two components, either monolithically in HgCdTe or using a hybrid packaging approach where a silicon MEMS Fabry-Perot filter is bonded at low temperature to a HgCdTe detector.

On Frequency Combs in Monolithic Resonators

NASA Astrophysics Data System (ADS)

Savchenkov, A. A.; Matsko, A. B.; Maleki, L.

2016-06-01

Optical frequency combs have become indispensable in astronomical measurements, biological fingerprinting, optical metrology, and radio frequency photonic signal generation. Recently demonstrated microring resonator-based Kerr frequency combs point the way towards chip scale optical frequency comb generator retaining major properties of the lab scale devices. This technique is promising for integrated miniature radiofrequency and microwave sources, atomic clocks, optical references and femtosecond pulse generators. Here we present Kerr frequency comb development in a historical perspective emphasizing its similarities and differences with other physical phenomena. We elucidate fundamental principles and describe practical implementations of Kerr comb oscillators, highlighting associated solved and unsolved problems.

Modulation response characteristics of optical injection-locked cascaded microring laser

NASA Astrophysics Data System (ADS)

Yu, Shaowei; Pei, Li; Liu, Chao; Wang, Yiqun; Weng, Sijun

2014-09-01

Modulation bandwidth and frequency chirping of the optical injection-locked (OIL) microring laser (MRL) in the cascaded configuration are investigated. The unidirectional operation of the MRL under strong injection allows simple and cost-saving monolithic integration of the OIL system on one chip as it does not need the use of isolators between the master and slave lasers. Two cascading schemes are discussed in detail by focusing on the tailorable modulation response. The chip-to-power ratio of the cascaded optical injection-locked configuration has decreased by up to two orders of magnitude, compared with the single optical injection-locked configuration.

Design Considerations for Monolithic Beam Formers Based on Electro-Optic Polymer Phase Modulators and Strain-Induced Optical Waveguides - Postprint

DTIC Science & Technology

2015-01-01

integrated circuit,” AFRL/SNDP Rome, NY (MIPR#F1ATA06317G002) (2007). [2] S-K. Kim, W. Yun, K. Geary, Y.-C. Hung, and H. R. Fetterman , “Electro-optic...Garner, H. Zhang, V. Chuyanov, L. R. Dalton, F. Wang, A. S. Ren, A. Zhang, G. Todorova, A. Harper, H. R. Fetterman , D. Chen, A. Upupa, D. Bhattacharya... Fetterman , “Push-pull electro-optic polymer modulators with half-wave voltage and low loss at both 1310 and 1550 nm,” Appl. Phys. Lett., 78, 3136-3138

Bi-wavelength two dimensional chirped grating couplers for low cost WDM PON transceivers

NASA Astrophysics Data System (ADS)

Xu, Lin; Chen, Xia; Li, Chao; Tsang, Hon Ki

2011-04-01

We propose and demonstrate a bi-wavelength two dimensional (2D) waveguide grating coupler on silicon-on-insulator which has efficient coupling of optical light with two-wavelength bands independently between standard optical single mode fibers and nanophotonic waveguides. The details of design are described and the measurement results as well as system performance are experimentally characterized. The bi-wavelength grating coupler can be used as wavelength-division-multiplexing (WDM) splitter/combiner for monolithically silicon integrated transceivers, potentially meeting the low cost requirements for future WDM passive optical network (PON).

Low-power chip-level optical interconnects based on bulk-silicon single-chip photonic transceivers

NASA Astrophysics Data System (ADS)

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Kim, In Gyoo; Kim, Sun Ae; Oh, Jin Hyuk; Park, Jaegyu; Kim, Sanggi

2016-03-01

We present new scheme for chip-level photonic I/Os, based on monolithically integrated vertical photonic devices on bulk silicon, which increases the integration level of PICs to a complete photonic transceiver (TRx) including chip-level light source. A prototype of the single-chip photonic TRx based on a bulk silicon substrate demonstrated 20 Gb/s low power chip-level optical interconnects between fabricated chips, proving that this scheme can offer compact low-cost chip-level I/O solutions and have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, 3D-IC, and LAN/SAN/data-center and network applications.

Phased array-fed antenna configuration study: Technology assessment

NASA Technical Reports Server (NTRS)

Croswell, W. F.; Ball, D. E.; Taylor, R. C.

1983-01-01

Spacecraft array fed reflector antenna systems were assessed for particular application to a multiple fixed spot beam/multiple scanning spot beam system. Reflector optics systems are reviewed in addition to an investigation of the feasibility of the use of monolithic microwave integrated circuit power amplifiers and phase shifters in each element of the array feed.

Recent progress in design and hybridization of planar grating-based transceivers

NASA Astrophysics Data System (ADS)

Bidnyk, S.; Pearson, M.; Balakrishnan, A.; Gao, M.

2007-06-01

We report on recent progress in simulations, physical layout, fabrication and hybridization of planar grating-based transceivers for passive optical networks (PONs). Until recently, PON transceivers have been manufactured using bulk micro-optical components. Today, advancements in modeling and simulation techniques has made it possible to design complex elements in the same silica-on silicon PLC platform and create an alternative platform for manufacturing of bi-directional transceivers. In our chips we simulated an integrated chip that monolithically combined planar reflective gratings and cascaded Mach-Zehnder interferometers. We used a combination of the finite element method and beam propagation method to model cascaded interferometers with enhanced coupling coefficients. Our simulations show that low-diffraction order planar reflective gratings, designed for small incidence and reflection angles, possess the required dispersion strength to meet the PON specifications. Subsequently, we created structures for passive alignment and hybridized photodetectors and lasers. We believe that advancements in simulation of planar lightwave circuits with embedded planar reflective gratings will result in displacement of the thin-film filters (TFFs) technology in many applications that require a high degree of monolithic and hybrid integration.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arbabi, Amir; Arbabi, Ehsan; Kamali, Seyedeh Mahsa

Optical metasurfaces are two-dimensional arrays of nano-scatterers that modify optical wavefronts at subwavelength spatial resolution. They are poised to revolutionize optics by enabling complex low-cost systems where multiple metasurfaces are lithographically stacked and integrated with electronics. For imaging applications, metasurface stacks can perform sophisticated image corrections and can be directly integrated with image sensors. Here we demonstrate this concept with a miniature flat camera integrating a monolithic metasurface lens doublet corrected for monochromatic aberrations, and an image sensor. The doublet lens, which acts as a fisheye photographic objective, has a small f-number of 0.9, an angle-of-view larger than 60° ×more » 60°, and operates at 850 nm wavelength with 70% focusing efficiency. The camera exhibits nearly diffraction-limited image quality, which indicates the potential of this technology in the development of optical systems for microscopy, photography, and computer vision.« less

Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.

PubMed

Kim, Gyungock; Park, Jeong Woo; Kim, In Gyoo; Kim, Sanghoon; Kim, Sanggi; Lee, Jong Moo; Park, Gun Sik; Joo, Jiho; Jang, Ki-Seok; Oh, Jin Hyuk; Kim, Sun Ae; Kim, Jong Hoon; Lee, Jun Young; Park, Jong Moon; Kim, Do-Won; Jeong, Deog-Kyoon; Hwang, Moon-Sang; Kim, Jeong-Kyoum; Park, Kyu-Sang; Chi, Han-Kyu; Kim, Hyun-Chang; Kim, Dong-Wook; Cho, Mu Hee

2011-12-19

We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13μm CMOS interface IC chips were hybrid-integrated.

146-GHz millimeter-wave radio-over-fiber photonic wireless transmission system.

PubMed

Fice, M J; Rouvalis, E; van Dijk, F; Accard, A; Lelarge, F; Renaud, C C; Carpintero, G; Seeds, A J

2012-01-16

We report the experimental implementation of a wireless transmission system with a 146-GHz carrier frequency which is generated by optical heterodyning the two modes from a monolithically integrated quantum dash dual-DFB source. The monolithic structure of the device and the inherent low noise characteristics of quantum dash gain material allow us to demonstrate the transmission of a 1 Gbps ON-OFF keyed data signal with the two wavelengths in a free-running state at 146-GHz carrier wave frequency. The tuning range of the device fully covers the W-band (75 - 110 GHz) and the F-band (90 - 140 GHz).

High quality optically polished aluminum mirror and process for producing

NASA Technical Reports Server (NTRS)

Lyons, III, James J. (Inventor); Zaniewski, John J. (Inventor)

2005-01-01

A new technical advancement in the field of precision aluminum optics permits high quality optical polishing of aluminum monolith, which, in the field of optics, offers numerous benefits because of its machinability, lightweight, and low cost. This invention combines diamond turning and conventional polishing along with india ink, a newly adopted material, for the polishing to accomplish a significant improvement in surface precision of aluminum monolith for optical purposes. This invention guarantees the precise optical polishing of typical bare aluminum monolith to surface roughness of less than about 30 angstroms rms and preferably about 5 angstroms rms while maintaining a surface figure accuracy in terms of surface figure error of not more than one-fifteenth of wave peak-to-valley.

High quality optically polished aluminum mirror and process for producing

NASA Technical Reports Server (NTRS)

Lyons, III, James J. (Inventor); Zaniewski, John J. (Inventor)

2002-01-01

A new technical advancement in the field of precision aluminum optics permits high quality optical polishing of aluminum monolith, which, in the field of optics, offers numerous benefits because of its machinability, lightweight, and low cost. This invention combines diamond turning and conventional polishing along with india ink, a newly adopted material, for the polishing to accomplish a significant improvement in surface precision of aluminum monolith for optical purposes. This invention guarantees the precise optical polishing of typical bare aluminum monolith to surface roughness of less than about 30 angstroms rms and preferably about 5 angstroms rms while maintaining a surface figure accuracy in terms of surface figure error of not more than one-fifteenth of wave peak-to-valley.

Hybridization of active and passive elements for planar photonic components and interconnects

NASA Astrophysics Data System (ADS)

Pearson, M.; Bidnyk, S.; Balakrishnan, A.

2007-02-01

The deployment of Passive Optical Networks (PON) for Fiber-to-the-Home (FTTH) applications currently represents the fastest growing sector of the telecommunication industry. Traditionally, FTTH transceivers have been manufactured using commodity bulk optics subcomponents, such as thin film filters (TFFs), micro-optic collimating lenses, TO-packaged lasers, and photodetectors. Assembling these subcomponents into a single housing requires active alignment and labor-intensive techniques. Today, the majority of cost reducing strategies using bulk subcomponents has been implemented making future reductions in the price of manufacturing FTTH transceivers unlikely. Future success of large scale deployments of FTTH depends on further cost reductions of transceivers. Realizing the necessity of a radically new packaging approach for assembly of photonic components and interconnects, we designed a novel way of hybridizing active and passive elements into a planar lightwave circuit (PLC) platform. In our approach, all the filtering components were monolithically integrated into the chip using advancements in planar reflective gratings. Subsequently, active components were passively hybridized with the chip using fully-automated high-capacity flip-chip bonders. In this approach, the assembly of the transceiver package required no active alignment and was readily suitable for large-scale production. This paper describes the monolithic integration of filters and hybridization of active components in both silica-on-silicon and silicon-on-insulator PLCs.

Monolithic MZI-SOA hybrid switch for low-power and low-penalty operation.

PubMed

Cheng, Q; Wonfor, A; Wei, J L; Penty, R V; White, I H

2014-03-15

We report the first experimental demonstration of a monolithically integrated hybrid dilated 2×2 modular optical switch using Mach-Zehnder modulators as low-loss 1×2 switching elements and short semiconductor optical amplifiers to provide additional extinction and gain. An excellent 40 dB cross-talk/extinction ratio is recorded with data-modulated signal-to-noise ratios of up to 44 dB in a 0.1 nm bandwidth. A switching time of 3 ns is demonstrated. Bit error rate studies show extremely low subsystem penalties of less than 0.1 dB, and studies indicate that, by using this hybrid switch building block, an 8×8 port switch could be achieved with 14 dB input power dynamic range for subsystem penalties of less than 0.5 dB.

Site-Controlled Growth of Monolithic InGaAs/InP Quantum Well Nanopillar Lasers on Silicon.

PubMed

Schuster, Fabian; Kapraun, Jonas; Malheiros-Silveira, Gilliard N; Deshpande, Saniya; Chang-Hasnain, Connie J

2017-04-12

In this Letter, we report the site-controlled growth of InP nanolasers on a silicon substrate with patterned SiO 2 nanomasks by low-temperature metal-organic chemical vapor deposition, compatible with silicon complementary metal-oxide-semiconductor (CMOS) post-processing. A two-step growth procedure is presented to achieve smooth wurtzite faceting of vertical nanopillars. By incorporating InGaAs multiquantum wells, the nanopillar emission can be tuned over a wide spectral range. Enhanced quality factors of the intrinsic InP nanopillar cavities promote lasing at 0.87 and 1.21 μm, located within two important optical telecommunication bands. This is the first demonstration of a site-controlled III-V nanolaser monolithically integrated on silicon with a silicon-transparent emission wavelength, paving the way for energy-efficient on-chip optical links at typical telecommunication wavelengths.

On-chip optical phase locking of single growth monolithically integrated Slotted Fabry Perot lasers.

PubMed

Morrissey, P E; Cotter, W; Goulding, D; Kelleher, B; Osborne, S; Yang, H; O'Callaghan, J; Roycroft, B; Corbett, B; Peters, F H

2013-07-15

This work investigates the optical phase locking performance of Slotted Fabry Perot (SFP) lasers and develops an integrated variable phase locked system on chip for the first time to our knowledge using these lasers. Stable phase locking is demonstrated between two SFP lasers coupled on chip via a variable gain waveguide section. The two lasers are biased differently, one just above the threshold current of the device with the other at three times this value. The coupling between the lasers can be controlled using the variable gain section which can act as a variable optical attenuator or amplifier depending on bias. Using this, the width of the stable phase locking region on chip is shown to be variable.

18-THz-wide optical frequency comb emitted from monolithic passively mode-locked semiconductor quantum-well laser

NASA Astrophysics Data System (ADS)

Lo, Mu-Chieh; Guzmán, Robinson; Ali, Muhsin; Santos, Rui; Augustin, Luc; Carpintero, Guillermo

2017-10-01

We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase modulators followed by an extra-cavity SOA as booster amplifier. A 1.8-THz-wide optical comb spectrum is presented with ultrafast pulse that is 0.35-ps-wide. The radio frequency beat note has a 3-dB linewidth of 450 kHz and 35-dB SNR.

Photonics-based microwave frequency measurement using a double-sideband suppressed-carrier modulation and an InP integrated ring-assisted Mach-Zehnder interferometer filter.

PubMed

Fandiño, Javier S; Muñoz, Pascual

2013-11-01

A photonic system capable of estimating the unknown frequency of a CW microwave tone is presented. The core of the system is a complementary optical filter monolithically integrated in InP, consisting of a ring-assisted Mach-Zehnder interferometer with a second-order elliptic response. By simultaneously measuring the different optical powers produced by a double-sideband suppressed-carrier modulation at the outputs of the photonic integrated circuit, an amplitude comparison function that depends on the input tone frequency is obtained. Using this technique, a frequency measurement range of 10 GHz (5-15 GHz) with a root mean square value of frequency error lower than 200 MHz is experimentally demonstrated. Moreover, simulations showing the impact of a residual optical carrier on system performance are also provided.

Miniature optical planar camera based on a wide-angle metasurface doublet corrected for monochromatic aberrations

DOE PAGES

Arbabi, Amir; Arbabi, Ehsan; Kamali, Seyedeh Mahsa; ...

2016-11-28

Optical metasurfaces are two-dimensional arrays of nano-scatterers that modify optical wavefronts at subwavelength spatial resolution. They are poised to revolutionize optics by enabling complex low-cost systems where multiple metasurfaces are lithographically stacked and integrated with electronics. For imaging applications, metasurface stacks can perform sophisticated image corrections and can be directly integrated with image sensors. Here we demonstrate this concept with a miniature flat camera integrating a monolithic metasurface lens doublet corrected for monochromatic aberrations, and an image sensor. The doublet lens, which acts as a fisheye photographic objective, has a small f-number of 0.9, an angle-of-view larger than 60° ×more » 60°, and operates at 850 nm wavelength with 70% focusing efficiency. The camera exhibits nearly diffraction-limited image quality, which indicates the potential of this technology in the development of optical systems for microscopy, photography, and computer vision.« less

Integrated Fiber-Optic Coupler.

DTIC Science & Technology

1987-04-01

p. 563, 1984. 1 .T.H. W. n h= n , G.M. Metze, B.- Y . Tuu ,J.C.C. Far., "A a s double-heterostructure diode lasers fabricated on a monolithic GaAs/Si...INII RAitI) R HR ( OLIlIR HR t( N ,% NOS( I D108 I R IOst\\1 tN( LASS~l1 D R 87 mm mhhh z V. 0 0- z C ,, Technical Document 1086 April 1987 Integrated...Cmeed".~) n Interated Fiber-Optic Coupler 12 PERSONAL AU1HOS) P.L Pruaal, E.R. Foesuim 139 TYPE OF RE[POR 3b, IME COVERED4 DATE OF REPORT (’r. 4#e ow S

Sensing systems using chip-based spectrometers

NASA Astrophysics Data System (ADS)

Nitkowski, Arthur; Preston, Kyle J.; Sherwood-Droz, Nicolás.; Behr, Bradford B.; Bismilla, Yusuf; Cenko, Andrew T.; DesRoches, Brandon; Meade, Jeffrey T.; Munro, Elizabeth A.; Slaa, Jared; Schmidt, Bradley S.; Hajian, Arsen R.

2014-06-01

Tornado Spectral Systems has developed a new chip-based spectrometer called OCTANE, the Optical Coherence Tomography Advanced Nanophotonic Engine, built using a planar lightwave circuit with integrated waveguides fabricated on a silicon wafer. While designed for spectral domain optical coherence tomography (SD-OCT) systems, the same miniaturized technology can be applied to many other spectroscopic applications. The field of integrated optics enables the design of complex optical systems which are monolithically integrated on silicon chips. The form factors of these systems can be significantly smaller, more robust and less expensive than their equivalent free-space counterparts. Fabrication techniques and material systems developed for microelectronics have previously been adapted for integrated optics in the telecom industry, where millions of chip-based components are used to power the optical backbone of the internet. We have further adapted the photonic technology platform for spectroscopy applications, allowing unheard-of economies of scale for these types of optical devices. Instead of changing lenses and aligning systems, these devices are accurately designed programmatically and are easily customized for specific applications. Spectrometers using integrated optics have large advantages in systems where size, robustness and cost matter: field-deployable devices, UAVs, UUVs, satellites, handheld scanning and more. We will discuss the performance characteristics of our chip-based spectrometers and the type of spectral sensing applications enabled by this technology.

Ultralow crosstalk nanosecond-scale nested 2 × 2 Mach-Zehnder silicon photonic switch.

PubMed

Dupuis, Nicolas; Rylyakov, Alexander V; Schow, Clint L; Kuchta, Daniel M; Baks, Christian W; Orcutt, Jason S; Gill, Douglas M; Green, William M J; Lee, Benjamin G

2016-07-01

We present the design and characterization of a novel electro-optic silicon photonic 2×2 nested Mach-Zehnder switch monolithically integrated with a CMOS driver and interface logic. The photonic device uses a variable optical attenuator in order to balance the power inside the Mach-Zehnder interferometer leading to ultralow crosstalk performance. We measured a crosstalk as low as -34.5  dB, while achieving ∼2  dB insertion loss and 4 ns transient response.

Single-frequency, fully integrated, miniature DPSS laser based on monolithic resonator

NASA Astrophysics Data System (ADS)

Dudzik, G.; Sotor, J.; Krzempek, K.; Soboń, G.; Abramski, K. M.

2014-02-01

We present a single frequency, stable, narrow linewidth, miniature laser sources operating at 532 nm (or 1064 nm) based on a monolithic resonators. Such resonators utilize birefringent filters formed by YVO4 beam displacer and KTP or YVO4 crystals to force single frequency operation at 532 nm or 1064 nm, respectively. In both configurations Nd:YVO4 gain crystal is used. The resonators dimensions are 1x1x10.5 mm3 and 1x1x8.5 mm3 for green and infrared configurations, respectively. Presented laser devices, with total dimensions of 40x52x120 mm3, are fully equipped with driving electronics, pump diode, optical and mechanical components. The highly integrated (36x15x65 mm3) low noise driving electronics with implemented digital PID controller was designed. It provides pump current and resonator temperature stability of ±30 μA@650 mA and ±0,003ºC, respectively. The laser parameters can be set and monitored via the USB interface by external application. The developed laser construction is universal. Hence, the other wavelengths can be obtained only by replacing the monolithic resonator. The optical output powers in single frequency regime was at the level of 42 mW@532 nm and 0.5 W@1064 nm with the long-term fluctuations of ±0.85 %. The linewidth and the passive frequency stability under the free running conditions were Δν < 100 kHz and 3ṡ10-9@1 s integration time, respectively. The total electrical power supply consumption of laser module was only 4 W. Presented compact, single frequency laser operating at 532 nm and 1064 nm may be used as an excellent source for laser vibrometry, interferometry or seed laser for fiber amplifiers.

Silicon-based silicon–germanium–tin heterostructure photonics

PubMed Central

Soref, Richard

2014-01-01

The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479

Spatial mode filters realized with multimode interference couplers

NASA Astrophysics Data System (ADS)

Leuthold, J.; Hess, R.; Eckner, J.; Besse, P. A.; Melchior, H.

1996-06-01

Spatial mode filters based on multimode interference couplers (MMI's) that offer the possibility of splitting off antisymmetric from symmetric modes are presented, and realizations of these filters in InGaAsP / InP are demonstrated. Measured suppression of the antisymmetric first-order modes at the output for the symmetric mode is better than 18 dB. Such MMI's are useful for monolithically integrating mode filters with all-optical devices, which are controlled through an antisymmetric first-order mode. The filtering out of optical control signals is necessary for cascading all-optical devices. Another application is the improvement of on-off ratios in optical switches.

Monolithic fiber optic sensor assembly

DOEpatents

Sanders, Scott

2015-02-10

A remote sensor element for spectrographic measurements employs a monolithic assembly of one or two fiber optics to two optical elements separated by a supporting structure to allow the flow of gases or particulates therebetween. In a preferred embodiment, the sensor element components are fused ceramic to resist high temperatures and failure from large temperature changes.

Ultrastable assembly and integration technology for ground- and space-based optical systems.

PubMed

Ressel, Simon; Gohlke, Martin; Rauen, Dominik; Schuldt, Thilo; Kronast, Wolfgang; Mescheder, Ulrich; Johann, Ulrich; Weise, Dennis; Braxmaier, Claus

2010-08-01

Optical metrology systems crucially rely on the dimensional stability of the optical path between their individual optical components. We present in this paper a novel adhesive bonding technology for setup of quasi-monolithic systems and compare selected characteristics to the well-established state-of-the-art technique of hydroxide-catalysis bonding. It is demonstrated that within the measurement resolution of our ultraprecise custom heterodyne interferometer, both techniques achieve an equivalent passive path length and tilt stability for time scales between 0.1 mHz and 1 Hz. Furthermore, the robustness of the adhesive bonds against mechanical and thermal inputs has been tested, making this new bonding technique in particular a potential option for interferometric applications in future space missions. The integration process itself is eased by long time scales for alignment, as well as short curing times.

MUSE field splitter unit: fan-shaped separator for 24 integral field units

NASA Astrophysics Data System (ADS)

Laurent, Florence; Renault, Edgard; Anwand, Heiko; Boudon, Didier; Caillier, Patrick; Kosmalski, Johan; Loupias, Magali; Nicklas, Harald; Seifert, Walter; Salaun, Yves; Xu, Wenli

2014-07-01

MUSE (Multi Unit Spectroscopic Explorer) is a second generation Very Large Telescope (VLT) integral field spectrograph developed for the European Southern Observatory (ESO). It combines a 1' x 1' field of view sampled at 0.2 arcsec for its Wide Field Mode (WFM) and a 7.5"x7.5" field of view for its Narrow Field Mode (NFM). Both modes will operate with the improved spatial resolution provided by GALACSI (Ground Atmospheric Layer Adaptive Optics for Spectroscopic Imaging), that will use the VLT deformable secondary mirror and 4 Laser Guide Stars (LGS) foreseen in 2015. MUSE operates in the visible wavelength range (0.465-0.93 μm). A consortium of seven institutes is currently commissioning MUSE in the Very Large Telescope for the Preliminary Acceptance in Chile, scheduled for September, 2014. MUSE is composed of several subsystems which are under the responsibility of each institute. The Fore Optics derotates and anamorphoses the image at the focal plane. A Splitting and Relay Optics feed the 24 identical Integral Field Units (IFU), that are mounted within a large monolithic instrument mechanical structure. Each IFU incorporates an image slicer, a fully refractive spectrograph with VPH-grating and a detector system connected to a global vacuum and cryogenic system. During 2012 and 2013, all MUSE subsystems were integrated, aligned and tested to the P.I. institute at Lyon. After successful PAE in September 2013, MUSE instrument was shipped to the Very Large Telescope in Chile where it was aligned and tested in ESO integration hall at Paranal. After, MUSE was directly transferred in monolithic way onto VLT telescope where the first light was achieved. This paper describes the MUSE main optical component: the Field Splitter Unit. It splits the VLT image into 24 subfields and provides the first separation of the beam for the 24 Integral Field Units. This talk depicts its manufacturing at Winlight Optics and its alignment into MUSE instrument. The success of the MUSE alignment is demonstrated by the excellent results obtained onto MUSE positioning, image quality and throughput onto the sky. MUSE commissioning at the VLT is planned for September, 2014.

Monolithically integrated mid-infrared lab-on-a-chip using plasmonics and quantum cascade structures

PubMed Central

Schwarz, Benedikt; Reininger, Peter; Ristanić, Daniela; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

2014-01-01

The increasing demand of rapid sensing and diagnosis in remote areas requires the development of compact and cost-effective mid-infrared sensing devices. So far, all miniaturization concepts have been demonstrated with discrete optical components. Here we present a monolithically integrated sensor based on mid-infrared absorption spectroscopy. A bi-functional quantum cascade laser/detector is used, where, by changing the applied bias, the device switches between laser and detector operation. The interaction with chemicals in a liquid is resolved via a dielectric-loaded surface plasmon polariton waveguide. The thin dielectric layer enhances the confinement and enables efficient end-fire coupling from and to the laser and detector. The unamplified detector signal shows a slope of 1.8–7 μV per p.p.m., which demonstrates the capability to reach p.p.m. accuracy over a wide range of concentrations (0–60%). Without any hybrid integration or subwavelength patterning, our approach allows a straightforward and cost-saving fabrication. PMID:24905443

170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.

PubMed

Rouvalis, E; Chtioui, M; van Dijk, F; Lelarge, F; Fice, M J; Renaud, C C; Carpintero, G; Seeds, A J

2012-08-27

We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.

Polymer enabled 100 Gbaud connectivity for datacom applications

NASA Astrophysics Data System (ADS)

Katopodis, V.; Groumas, P.; Zhang, Z.; Dinu, R.; Miller, E.; Konczykowska, A.; Dupuy, J.-Y.; Beretta, A.; Dede, A.; Choi, J. H.; Harati, P.; Jorge, F.; Nodjiadjim, V.; Riet, Muriel; Cangini, G.; Vannucci, A.; Keil, N.; Bach, H.-G.; Grote, N.; Avramopoulos, H.; Kouloumentas, Ch.

2016-03-01

Polymers hold the promise for ultra-fast modulation of optical signals due to their potential for ultra-fast electro-optic (EO) response and high EO coefficient. In this work, we present the basic structure and properties of an efficient EO material system, and we summarize the efforts made within the project ICT-POLYSYS for the development of high-speed transmitters based on this system. More specifically, we describe successful efforts for the monolithic integration of multi-mode interference (MMI) couplers and Bragg-gratings (BGs) along with Mach-Zehnder modulators (MZMs) on this platform, and for the hybrid integration of InP active elements in the form of laser diodes (LDs) and gain chips (GCs). Using these integration techniques and the combination of the hybrid optical chips with ultra-fast indium phosphide double heterojunction bipolar transistor (InP-DHBT) electronics, we develop and fully package a single 100 Gb/s transmitter and a 2×100 Gb/s transmitter that can support serial operation at this rate with conventional non-return-to-zero on-off-keying (NRZ-OOK) modulation format. We also present the experimental evaluation of the devices, validating the efficiency of the monolithic and hybrid integration concepts and confirming the potential of this technology for single-lane 100 Gb/s optical connectivity in data-center network environments. Results from transmission experiments to this end include the achievement of BER close to 6·10-9 in B2B configuration, the achievement of BER lower than 10-7 for propagation over standard single-mode fiber (SSMF) with total length up to 1000 m, and the achievement of BER at the level of 10-5 after 1625 m of SSMF. Finally, plans for the use of the EO polymer system in a more complex hybrid integration platform for high-flexibility/high-capacity transmitters are also outlined.

Thermally-Resilient, Broadband Optical Absorber from UV-to-IR Derived from Carbon Nanostructures and Method of Making the Same

NASA Technical Reports Server (NTRS)

Kaul, Anupama B. (Inventor); Coles, James B. (Inventor)

2015-01-01

A monolithic optical absorber and methods of making same. The monolithic optical absorber uses an array of mutually aligned carbon nanotubes that are grown using a PECVD growth process and a structure that includes a conductive substrate, a refractory template layer and a nucleation layer. Monolithic optical absorbers made according to the described structure and method exhibit high absorptivity, high site densities (greater than 10.sup.9 nanotubes/cm.sup.2), very low reflectivity (below 1%), and high thermal stability in air (up to at least 400.degree. C.). The PECVD process allows the application of such absorbers in a wide variety of end uses.

Cost-effective monolithic and hybrid integration for metro and long-haul applications

NASA Astrophysics Data System (ADS)

Clayton, Rick; Carter, Andy; Betty, Ian; Simmons, Timothy

2003-12-01

Today's telecommunication market is characterized by conservative business practices: tight management of costs, low risk investing and incremental upgrades, rather than the more freewheeling approach taken a few years ago. Optimizing optical components for the current and near term market involves substantial integration, but within particular bounds. The emphasis on evolution, in particular, has led to increased standardization of functions and so created extensive opportunities for integrated product offerings. The same standardization that enables commercially successful integrated functions also changes the competitive environment, and changes the emphasis for component development; shifting the innovation priority from raw performance to delivering the most effective integrated products. This paper will discuss, with specific examples from our transmitter, receiver and passives product families, our understanding of the issues based on extensive experience in delivering high end integrated products to the market, and the direction it drives optical components.

Monolithically integrated broad-band Mach-Zehnder interferometers for highly sensitive label-free detection of biomolecules through dual polarization optics.

PubMed

Psarouli, A; Salapatas, A; Botsialas, A; Petrou, P S; Raptis, I; Makarona, E; Jobst, G; Tukkiniemi, K; Sopanen, M; Stoffer, R; Kakabakos, S E; Misiakos, K

2015-12-02

Protein detection and characterization based on Broad-band Mach-Zehnder Interferometry is analytically outlined and demonstrated through a monolithic silicon microphotonic transducer. Arrays of silicon light emitting diodes and monomodal silicon nitride waveguides forming Mach-Zehnder interferometers were integrated on a silicon chip. Broad-band light enters the interferometers and exits sinusoidally modulated with two distinct spectral frequencies characteristic of the two polarizations. Deconvolution in the Fourier transform domain makes possible the separation of the two polarizations and the simultaneous monitoring of the TE and the TM signals. The dual polarization analysis over a broad spectral band makes possible the refractive index calculation of the binding adlayers as well as the distinction of effective medium changes into cover medium or adlayer ones. At the same time, multi-analyte detection at concentrations in the pM range is demonstrated.

Monolithically Integrated Dual-Wavelength Self-Sustained Pulsating Laser Diodes with Real Refractive Index Guided Self-Aligned Structure

NASA Astrophysics Data System (ADS)

Onishi, Toshikazu; Imafuji, Osamu; Fukuhisa, Toshiya; Mochida, Atsunori; Kobayashi, Yasuhiro; Yuri, Masaaki; Itoh, Kunio; Shimizu, Hirokazu

2001-11-01

Monolithically integrated 780-nm-band and 650-nm-band self-sustained pulsating (SSP) lasers, which are desirable for simplified optical pickups in digital versatile disk (DVD) systems, have been developed for the first time. The real refractive index guided self-aligned (RISA) waveguide structure is adapted to reduce absorption loss in the current blocking layers. In order to obtain stable SSP, a saturable absorber formed in the active layer outside the current stripe, and a saturable absorbing layer above the active layer are utilized for the 780-nm-band and 650-nm-band laser diodes (LDs), respectively. Relative intensity noise less than -130 dB/Hz is maintained at temperatures of up to 80°C at an output power of 7 mW for the 650 nm band and 10 mW for the 780 nm band, which suggests that stable SSP operations have been realized.

Reconfigurable optical-to-optical frequency conversion method and apparatus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zortman, William A.; Lentine, Anthony L.

A photonic device is provided for impressing a modulation pattern on an optical carrier. The device includes a unit in which a photodetector and an optical microresonator are monolithically integrated. The device further includes an optical waveguide evanescently coupled to the optical microresonator and having at least an upstream portion configured to carry at least one optical carrier toward the microresonator. The optical microresonator is tunable so as to resonate with the optical carrier frequency. The optical microresonator and the photodetector are mutually coupled such that in operation, charge carriers photogenerated in the photodetector are injected into the microresonator, wheremore » the photocurrent changes the resonant conditions. In some embodiments the device is operable as an optical-to-optical frequency converter. In other embodiments the device is operable as an oscillator.« less

Monolithically Integrated Fiber Optic Coupler

DTIC Science & Technology

2013-01-14

tilted Bragg gratings 24 are thermoelectric coolers (TECs) 30 that can modify the pitch of the tilted Bragg gratings 24, thereby changing their...reflective properties at specific wavelengths to provide tunability. Heating or cooling by thermoelectric coolers 30 causes expansion or contraction of...of a different wavelength of light. While thermoelectric coolers are preferred, devices 30 can be any reversible cooling/heating device that is

Organic membrane photonic integrated circuits (OMPICs).

PubMed

Amemiya, Tomohiro; Kanazawa, Toru; Hiratani, Takuo; Inoue, Daisuke; Gu, Zhichen; Yamasaki, Satoshi; Urakami, Tatsuhiro; Arai, Shigehisa

2017-08-07

We propose the concept of organic membrane photonic integrated circuits (OMPICs), which incorporate various functions needed for optical signal processing into a flexible organic membrane. We describe the structure of several devices used within the proposed OMPICs (e.g., transmission lines, I/O couplers, phase shifters, photodetectors, modulators), and theoretically investigate their characteristics. We then present a method of fabricating the photonic devices monolithically in an organic membrane and demonstrate the operation of transmission lines and I/O couplers, the most basic elements of OMPICs.

Tapered rib fiber coupler for semiconductor optical devices

DOEpatents

Vawter, Gregory A.; Smith, Robert Edward

2001-01-01

A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.

Optoelectronic devices toward monolithic integration

NASA Astrophysics Data System (ADS)

Ghergia, V.

1992-12-01

Starting from the present state of tl art of discrete devices up to the on going realization of monolithic semicorxtuctor integrated prototypes an overview ofoptoelectronic devices for telecom applications is given inchiding a short classification of the different kind of integrated devices. On the future perspective of IBCN distribution network some economica of hybrid and monolithic forms of integration are attempted. lnaflyashoitpresentationoftheactivitiesperformedintbefieldofmonolithic integration by EEC ESPR1T and RACE projects is reported. 1.

THz transceiver characterization : LDRD project 139363 final report.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nordquist, Christopher Daniel; Wanke, Michael Clement; Cich, Michael Joseph

2009-09-01

LDRD Project 139363 supported experiments to quantify the performance characteristics of monolithically integrated Schottky diode + quantum cascade laser (QCL) heterodyne mixers at terahertz (THz) frequencies. These integrated mixers are the first all-semiconductor THz devices to successfully incorporate a rectifying diode directly into the optical waveguide of a QCL, obviating the conventional optical coupling between a THz local oscillator and rectifier in a heterodyne mixer system. This integrated mixer was shown to function as a true heterodyne receiver of an externally received THz signal, a breakthrough which may lead to more widespread acceptance of this new THz technology paradigm. Inmore » addition, questions about QCL mode shifting in response to temperature, bias, and external feedback, and to what extent internal frequency locking can improve stability have been answered under this project.« less

Electro-optical resonance modulation of vertical-cavity surface-emitting lasers.

PubMed

Germann, Tim David; Hofmann, Werner; Nadtochiy, Alexey M; Schulze, Jan-Hindrik; Mutig, Alex; Strittmatter, André; Bimberg, Dieter

2012-02-27

Optical and electrical investigations of vertical-cavity surface-emitting lasers (VCSEL) with a monolithically integrated electro-optical modulator (EOM) allow for a detailed physical understanding of this complex compound cavity laser system. The EOM VCSEL light output is investigated to identify optimal working points. An electro-optic resonance feature triggered by the quantum confined Stark effect is used to modulate individual VCSEL modes by more than 20 dB with an extremely small EOM voltage change of less than 100 mV. Spectral mode analysis reveals modulation of higher order modes and very low wavelength chirp of < 0.5 nm. Dynamic experiments and simulation predict an intrinsic bandwidth of the EOM VCSEL exceeding 50 GHz.

Optically interconnected phased arrays

NASA Technical Reports Server (NTRS)

Bhasin, Kul B.; Kunath, Richard R.

1988-01-01

Phased-array antennas are required for many future NASA missions. They will provide agile electronic beam forming for communications and tracking in the range of 1 to 100 GHz. Such phased arrays are expected to use several hundred GaAs monolithic integrated circuits (MMICs) as transmitting and receiving elements. However, the interconnections of these elements by conventional coaxial cables and waveguides add weight, reduce flexibility, and increase electrical interference. Alternative interconnections based on optical fibers, optical processing, and holography are under evaluation as possible solutions. In this paper, the current status of these techniques is described. Since high-frequency optical components such as photodetectors, lasers, and modulators are key elements in these interconnections, their performance and limitations are discussed.

Silicon photonic dynamic optical channel leveler with external feedback loop.

PubMed

Doylend, J K; Jessop, P E; Knights, A P

2010-06-21

We demonstrate a dynamic optical channel leveler composed of a variable optical attenuator (VOA) integrated monolithically with a defect-mediated photodiode in a silicon photonic waveguide device. An external feedback loop mimics an analog circuit such that the photodiode directly controls the VOA to provide blind channel leveling within +/-1 dB across a 7-10 dB dynamic range for wavelengths from 1530 nm to 1570 nm. The device consumes approximately 50 mW electrical power and occupies a 6 mm x 0.1 mm footprint per channel. Dynamic leveling is accomplished without tapping optical power from the output path to the photodiode and thus the loss penalty is minimized.

Mitigation of Rayleigh crosstalk using noise suppression technique in 10-Gb/s REAM-SOA.

PubMed

Jeong, Jong Sool; Kim, Hyun-Soo; Choi, Byung-Seok; Kim, Dong Churl; Kim, Ki-Soo; Park, Mi-Ran; Kwon, O-Kyun

2012-11-19

We demonstrate a mitigation of Rayleigh back-scattering (RBS) impact in 10-Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA). The technique is based on the intensity-noise suppression of the centralized incoherent seed-light, which enables smooth evolution of deployed DWDM applications. We exhibit the power penalty of less than 1 dB at the large RBS crosstalk value of about 8 dB when the optical power of seed-light is lowered about -10 dBm.

All-optical 10Gb/s ternary-CAM cell for routing look-up table applications.

PubMed

Mourgias-Alexandris, George; Vagionas, Christos; Tsakyridis, Apostolos; Maniotis, Pavlos; Pleros, Nikos

2018-03-19

We experimentally demonstrate the first all-optical Ternary-Content Addressable Memory (T-CAM) cell that operates at 10Gb/s and comprises two monolithically integrated InP Flip-Flops (FF) and a SOA-MZI optical XOR gate. The two FFs are responsible for storing the data bit and the ternary state 'X', respectively, with the XOR gate used for comparing the stored FF-data and the search bit. The experimental results reveal error-free operation at 10Gb/s for both Write and Ternary Content Addressing of the T-CAM cell, indicating that the proposed optical T-CAM cell could in principle lead to all-optical T-CAM-based Address Look-up memory architectures for high-end routing applications.

Fabricating binary optics: An overview of binary optics process technology

NASA Technical Reports Server (NTRS)

Stern, Margaret B.

1993-01-01

A review of binary optics processing technology is presented. Pattern replication techniques have been optimized to generate high-quality efficient microoptics in visible and infrared materials. High resolution optical photolithography and precision alignment is used to fabricate maximally efficient fused silica diffractive microlenses at lambda = 633 nm. The degradation in optical efficiency of four-phase-level fused silica microlenses resulting from an intentional 0.35 micron translational error has been systematically measured as a function of lens speed (F/2 - F/60). Novel processes necessary for high sag refractive IR microoptics arrays, including deep anisotropic Si-etching, planarization of deep topography and multilayer resist techniques, are described. Initial results are presented for monolithic integration of photonic and microoptic systems.

Magneto-optical properties of cerium substituted yttrium iron garnet films with reduced thermal budget for monolithic photonic integrated circuits.

PubMed

Goto, Taichi; Onbaşlı, Mehmet C; Ross, C A

2012-12-17

Thin films of polycrystalline cerium substituted yttrium iron garnet (CeYIG) were grown on an yttrium iron garnet (YIG) seed layer on Si and Si-on-insulator substrates by pulsed laser deposition, and their optical and magneto-optical properties in the near-IR region were measured. A YIG seed layer of ~30 nm thick processed by rapid thermal anneal at 800°C provided a virtual substrate to promote crystallization of the CeYIG. The effect of the thermal budget of the YIG/CeYIG growth process on the film structure, magnetic and magnetooptical properties was determined.

A dual frequency microstrip antenna for Ka band

NASA Technical Reports Server (NTRS)

Lee, R. Q.; Baddour, M. F.

1985-01-01

For fixed satellite communication systems at Ka band with downlink at 17.7 to 20.2 GHz and uplink at 27.5 to 30.0 GHz, the focused optics and the unfocused optics configurations with monolithic phased array feeds have often been used to provide multiple fixed and multiple scanning spot beam coverages. It appears that a dual frequency microstrip antenna capable of transmitting and receiving simultaneously is highly desirable as an array feed element. This paper describes some early efforts on the development and experimental testing of a dual frequency annular microstrip antenna. The antenna has potential application for use in conjunction with a monolithic microwave integrated circuit device as an active radiating element in a phased array of phased array feeds. The antenna is designed to resonate at TM sub 12 and TM sub 13 modes and tuned with a circumferential microstrip ring to vary the frequency ratio. Radiation characteristics at both the high and low frequencies are examined. Experimental results including radiating patterns and swept frequency measurements are presented.

Time-resolved optical spectrometer based on a monolithic array of high-precision TDCs and SPADs

NASA Astrophysics Data System (ADS)

Tamborini, Davide; Markovic, Bojan; Di Sieno, Laura; Contini, Davide; Bassi, Andrea; Tisa, Simone; Tosi, Alberto; Zappa, Franco

2013-12-01

We present a compact time-resolved spectrometer suitable for optical spectroscopy from 400 nm to 1 μm wavelengths. The detector consists of a monolithic array of 16 high-precision Time-to-Digital Converters (TDC) and Single-Photon Avalanche Diodes (SPAD). The instrument has 10 ps resolution and reaches 70 ps (FWHM) timing precision over a 160 ns full-scale range with a Differential Non-Linearity (DNL) better than 1.5 % LSB. The core of the spectrometer is the application-specific integrated chip composed of 16 pixels with 250 μm pitch, containing a 20 μm diameter SPAD and an independent TDC each, fabricated in a 0.35 μm CMOS technology. In front of this array a monochromator is used to focus different wavelengths into different pixels. The spectrometer has been used for fluorescence lifetime spectroscopy: 5 nm spectral resolution over an 80 nm bandwidth is achieved. Lifetime spectroscopy of Nile blue is demonstrated.

Phased-Array Antenna With Optoelectronic Control Circuits

NASA Technical Reports Server (NTRS)

Kunath, Richard R.; Shalkhauser, Kurt A.; Martzaklis, Konstantinos; Lee, Richard Q.; Downey, Alan N.; Simons, Rainee N.

1995-01-01

Prototype phased-array antenna features control of amplitude and phase at each radiating element. Amplitude- and phase-control signals transmitted on optical fiber to optoelectronic interface circuit (OEIC), then to monolithic microwave integrated circuit (MMIC) at each element. Offers advantages of flexible, rapid electronic steering and shaping of beams. Furthermore, greater number of elements, less overall performance of antenna degraded by malfunction in single element.

Synchronous OEIC Integrating Receiver for Optically Reconfigurable Gate Arrays.

PubMed

Sánchez-Azqueta, Carlos; Goll, Bernhard; Celma, Santiago; Zimmermann, Horst

2016-05-25

A monolithically integrated optoelectronic receiver with a low-capacitance on-chip pin photodiode is presented. The receiver is fabricated in a 0.35 μm opto-CMOS process fed at 3.3 V and due to the highly effective integrated pin photodiode it operates at μW. A regenerative latch acting as a sense amplifier leads in addition to a low electrical power consumption. At 400 Mbit/s, sensitivities of -26.0 dBm and -25.5 dBm are achieved, respectively, for λ = 635 nm and λ = 675 nm (BER = 10(-9) ) with an energy efficiency of 2 pJ/bit.

3D hybrid integrated lasers for silicon photonics

NASA Astrophysics Data System (ADS)

Song, B.; Pinna, S.; Liu, Y.; Megalini, L.; Klamkin, J.

2018-02-01

A novel 3D hybrid integration platform combines group III-V materials and silicon photonics to yield high-performance lasers is presented. This platform is based on flip-chip bonding and vertical optical coupling integration. In this work, indium phosphide (InP) devices with monolithic vertical total internal reflection turning mirrors were bonded to active silicon photonic circuits containing vertical grating couplers. Greater than 2 mW of optical power was coupled into a silicon waveguide from an InP laser. The InP devices can also be bonded directly to the silicon substrate, providing an efficient path for heat dissipation owing to the higher thermal conductance of silicon compared to InP. Lasers realized with this technique demonstrated a thermal impedance as low as 6.2°C/W, allowing for high efficiency and operation at high temperature. InP reflective semiconductor optical amplifiers were also integrated with 3D hybrid integration to form integrated external cavity lasers. These lasers demonstrated a wavelength tuning range of 30 nm, relative intensity noise lower than -135 dB/Hz and laser linewidth of 1.5 MHz. This platform is promising for integration of InP lasers and photonic integrated circuits on silicon photonics.

Integration of micro-/nano-/quantum-scale photonic devices: scientific and technological considerations

NASA Astrophysics Data System (ADS)

Lee, El-Hang; Lee, Seung-Gol; O, Beom Hoan; Park, Se Geun

2004-08-01

Scientific and technological issues and considerations regarding the integration of miniaturized microphotonic devices, circuits and systems in micron, submicron, and quantum scale, are presented. First, we examine the issues regarding the miniaturization of photonic devices including the size effect, proximity effect, energy confinement effect, microcavity effect, optical and quantum interference effect, high field effect, nonlinear effect, noise effect, quantum optical effect, and chaotic effect. Secondly, we examine the issues regarding the interconnection including the optical alignment, minimizing the interconnection losses, and maintaining optical modes. Thirdly, we address the issues regarding the two-dimensional or three-dimensional integration either in a hybrid format or in a monolithic format between active devices and passive devices of varying functions. We find that the concept of optical printed circuit board (O-PCB) that we propose is highly attractive as a platform for micro/nano/quantum-scale photonic integration. We examine the technological issues to be addressed in the process of fabrication, characterization, and packaging for actual implementation of the miniaturization, interconnection and integration. Devices that we have used for our study include: mode conversion schemes, micro-ring and micro-racetrack resonator devices, multimode interference devices, lasers, vertical cavity surface emitting microlasers, and their arrays. Future prospects are also discussed.

GaAs circuits for monolithic optical controller

NASA Technical Reports Server (NTRS)

Gustafson, G.; Bendett, M.; Carney, J.; Mactaggart, R.; Palmquist, S.

1988-01-01

GaAs circuits for use in a fully monolithic 1 Gb/s optical controller have been developed and tested. The circuits include photodetectors, transimpedance amplifiers and 1:16 demultiplexers that can directly control the phase of MMIC phase shifters. The entire chip contains approximately 300 self-aligned gate E/D-mode MESFETs. The MESFETs have one micron-wide gate and the E-mode FETs typically have transconductance of 200 ms/mm. Results of simulations and tests are reported. Also, the design and layout of the fully monolithic chip is discussed.

Monolithic exploding foil initiator

DOEpatents

Welle, Eric J; Vianco, Paul T; Headley, Paul S; Jarrell, Jason A; Garrity, J. Emmett; Shelton, Keegan P; Marley, Stephen K

2012-10-23

A monolithic exploding foil initiator (EFI) or slapper detonator and the method for making the monolithic EFI wherein the exploding bridge and the dielectric from which the flyer will be generated are integrated directly onto the header. In some embodiments, the barrel is directly integrated directly onto the header.

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

NASA Astrophysics Data System (ADS)

Shi, Bei; Li, Qiang; Lau, Kei May

2018-05-01

Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon photonic applications. In addition to the well-developed hybrid bonding techniques, the direct epitaxy method is spawning as a more strategic and potentially cost-effective approach to monolithically integrate InP-based telecom lasers. To minimize the unwanted defects within the InP crystal, we explore multiple InAs/InP quantum dots as dislocation filters. The high quality InP buffer is thus obtained, and the dislocation filtering effects of the quantum dots are directly examined via both plan-view and cross-sectional transmission electron microscopy, along with room-temperature photoluminescence. The defect density on the InP surface was reduced to 3 × 108/cm2, providing an improved optical property of active photonic devices on Si substrates. This work offers a novel solution to advance large-scale integration of InP on Si, which is beneficial to silicon-based long-wavelength lasers in telecommunications.

Silicon photonic filters with high rejection of both TE and TM modes for on-chip four wave mixing applications.

PubMed

Cantarella, Giuseppe; Klitis, Charalambos; Sorel, Marc; Strain, Michael J

2017-08-21

Wavelength selective filters represent one of the key elements for photonic integrated circuits (PIC) and many of their applications in linear and non-linear optics. In devices optimised for single polarisation operation, cross-polarisation scattering can significantly limit the achievable filter rejection. An on-chip filter consisting of elements to filter both TE and TM polarisations is demonstrated, based on a cascaded ring resonator geometry, which exhibits a high total optical rejection of over 60 dB. Monolithic integration of a cascaded ring filter with a four-wave mixing micro-ring device is also experimentally demonstrated with a FWM efficiency of -22dB and pump filter extinction of 62dB.

Silicon-based optoelectronics: Monolithic integration for WDM

NASA Astrophysics Data System (ADS)

Pearson, Matthew Richard T.

2000-10-01

This thesis details the development of enabling technologies required for inexpensive, monolithic integration of Si-based wavelength division multiplexing (WDM) components and photodetectors. The work involves the design and fabrication of arrayed waveguide grating demultiplexers in silicon-on-insulator (SOI), the development of advanced SiGe photodetectors capable of photodetection at 1.55 mum wavelengths, and the development of a low cost fabrication technique that enables the high volume production of Si-based photonic components. Arrayed waveguide grating (AWG) demultiplexers were designed and fabricated in SOI. The fabrication of AWGs in SOI has been reported in the literature, however there are a number of design issues specific to the SOI material system that can have a large effect on device performance and design, and have not been theoretically examined in earlier work. The SOI AWGs presented in this thesis are the smallest devices of this type reported, and they exhibit performance acceptable for commercial applications. The SiGe photodetectors reported in the literature exhibit extremely low responsivities at wavelengths near 1.55 mum. We present the first use of three dimensional growth modes to enhance the photoresponse of SiGe at 1.55 mum wavelengths. Metal semiconductor-metal (MSM) photodetectors were fabricated using this undulating quantum well structure, and demonstrate the highest responsivities yet reported for a SiGe-based photodetector at 1.55 mum. These detectors were monolithically integrated with low-loss SOI waveguides, enabling integration with nearly any Si-based passive WDM component. The pursuit of inexpensive Si-based photonic components also requires the development of new manufacturing techniques that are more suitable for high volume production. This thesis presents the development of a low cost fabrication technique based on the local oxidation of silicon (LOCOS), a standard processing technique used for Si integrated circuits. This process is developed for both SiGe and SOI waveguides, but is shown to be commercially suitable only for SOI waveguide devices. The technique allows nearly any Si microelectronics fabrication facility to begin manufacturing optical components with minimal change in processing equipment or techniques. These enabling technologies provide the critical elements for inexpensive, monolithic integration in a Si-based system.

Solid State Research

DTIC Science & Technology

1989-03-07

different regions of a single wafer, making possible multiwavelength optical intercon- nect technology. 6. ANALOG DEVICE TECHNOLOGY Superconducting...Sedlacek DJ. Ehrlich Monolithic Integration of H.K.. Choi GaAs/AlGaAs LED and Si Driver J.P. Mattia Circuit G.W. Turner B-Y. Tsaur An In-Situ...Study of the UV Photo- chemistry of Adsorbed TiCl4 by FTIR Spectroscopy R.P. Purohit M. Rothschild DJ. Ehrlich 6176 Transport and Kinetics

Holographic Structuring of Elastomer Actuator: First True Monolithic Tunable Elastomer Optics.

PubMed

Ryabchun, Alexander; Kollosche, Matthias; Wegener, Michael; Sakhno, Oksana

2016-12-01

Volume diffraction gratings (VDGs) are inscribed selectively by diffusive introduction of benzophenone and subsequent UV-holographic structuring into an electroactive dielectric elastomer actuator (DEA), to afford a continuous voltage-controlled grating shift of 17%. The internal stress coupling of DEA and optical domain allows for a new generation of true monolithic tunable elastomer optics with voltage controlled properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

NASA Astrophysics Data System (ADS)

Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

2018-02-01

A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

Computer-aided design comparisons of monolithic and hybrid MEM-tunable VCSELs

NASA Astrophysics Data System (ADS)

Ochoa, Edward M.; Nelson, Thomas R., Jr.; Blum-Spahn, Olga; Lott, James A.

2003-07-01

We report and use our micro-electro-mechanically tunable vertical cavity surface emitting laser (MEM-TVCSEL) computer-aided design methodology to investigate the resonant frequency design space for monolithic and hybrid MEM-TVCSELs. For various initial optical air gap thickness, we examine the sensitivity of monolithic or hybrid MEM-TVCSEL resonant frequency by simulating zero, two, and four percent variations in III-V material growth thickness. As expected, as initial optical airgap increases, tuning range decreases due to less coupling between the active region and the tuning mirror. However, each design has different resonant frequency sensitivity to variations in III-V growth parameters. In particular, since the monolithic design is comprised of III-V material, the shift in all growth thicknesses significantly shifts the resonant frequency response. However, for hybrid MEMTVCSELs, less shift results, since the lower reflector is an Au mirror with reflectivity independent of III-V growth variations. Finally, since the hybrid design is comprised of a MUMPS polysilicon mechanical actuator, pull-in voltage remains independent of the initial optical airgap between the tuning reflector and the III-V material. Conversely, as the initial airgap increases in the monolithic design, the pull-in voltage significantly increases.

Optical Modeling Activities for the James Webb Space Telescope (JWST) Project. II; Determining Image Motion and Wavefront Error Over an Extended Field of View with a Segmented Optical System

NASA Technical Reports Server (NTRS)

Howard, Joseph M.; Ha, Kong Q.

2004-01-01

This is part two of a series on the optical modeling activities for JWST. Starting with the linear optical model discussed in part one, we develop centroid and wavefront error sensitivities for the special case of a segmented optical system such as JWST, where the primary mirror consists of 18 individual segments. Our approach extends standard sensitivity matrix methods used for systems consisting of monolithic optics, where the image motion is approximated by averaging ray coordinates at the image and residual wavefront error is determined with global tip/tilt removed. We develop an exact formulation using the linear optical model, and extend it to cover multiple field points for performance prediction at each instrument aboard JWST. This optical model is then driven by thermal and dynamic structural perturbations in an integrated modeling environment. Results are presented.

Large-aperture MOEMS Fabry-Perot interferometer for miniaturized spectral imagers

NASA Astrophysics Data System (ADS)

Rissanen, Anna; Langner, Andreas; Viherkanto, Kai; Mannila, Rami

2015-02-01

VTT's optical MEMS Fabry-Perot interferometers (FPIs) are tunable optical filters, which enable miniaturization of spectral imagers into small, mass producible hand-held sensors with versatile optical measurement capabilities. FPI technology has also created a basis for various hyperspectral imaging instruments, ranging from nanosatellites, environmental sensing and precision agriculture with UAVs to instruments for skin cancer detection. Until now, these application demonstrations have been mostly realized with piezo-actuated FPIs fabricated by non-monolithical assembly method, suitable for achieving very large optical apertures and with capacity to small-to-medium volumes; however large-volume production of MEMS manufacturing supports the potential for emerging spectral imaging applications also in large-volume applications, such as in consumer/mobile products. Previously reported optical apertures of MEMS FPIs in the visible range have been up to 2 mm in size; this paper presents the design, successful fabrication and characterization of MEMS FPIs for central wavelengths of λ = 500 nm and λ = 650 nm with optical apertures up to 4 mm in diameter. The mirror membranes of the FPI structures consist of ALD (atomic layer deposited) TiO2-Al2O3 λ/4- thin film Bragg reflectors, with the air gap formed by sacrificial polymer etching in O2 plasma. The entire fabrication process is conducted below 150 °C, which makes it possible to monolithically integrate the filter structures on other ICdevices such as detectors. The realized MEMS devices are aimed for nanosatellite space application as breadboard hyperspectral imager demonstrators.

Ultra-low noise combs in the palm of your hand

NASA Astrophysics Data System (ADS)

Schibli, Thomas R.

Mode-locked lasers are attractive tools for precision measurements and for photonic microwave generation. The technology around these lasers has rapidly evolved, and with the invention of optical frequency combs, fs-technology has become a ubiquitous tool science and engineering. At first, most of these combs were generated by bulky and delicate Kerr-Lens mode-locked Ti:sapphire systems, but have now been mostly replaced by the much more robust and compact fiber lasers. However, the move from table-top solid-state lasers to the fully self-contained fiber systems came with a price: the optical phase noise performance degraded due to design constraints. While this is of no concern for most spectroscopic applications, it poses a challenge for applications that require excellent short-term phase noise performance, such as, for example, required for photonic microwave generation. While much of this has been improved by ingenious laser designs, it remains a challenge to obtain ultra-low phase-noise combs from high-repetition-rate fiber lasers. Here we present a new approach consisting of a monolithic cavity design, in which the laser light is fully confined inside an optical material. Thanks to this monolithic design, these solid-state lasers are inherently robust against environmental perturbations, such as acoustics, vibrations, air pressure and humidity. Opposed to the omnipresent mode-locked fiber lasers, these monolithic lasers exhibit very low round-trip loss, dispersion and nonlinearities. As a result, they produce highly stable pulse trains, with free-running relative line-widths of the order of a few Hz in the optical domain, despite their moderately high fundamental repetition rates of 1 GHz. The compact design further simplifies integration into complex systems, and eliminates the need for an optics bench or a vibration isolated platform. These lasers produce less than 0.2 W of heat, and are fully turn-key. This work was supported by the DARPA PULSE program with a Grant from AMRDEC and by the NSF Early Career Award.

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

NASA Technical Reports Server (NTRS)

Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

1989-01-01

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Spoked-ring microcavities: enabling seamless integration of nanophotonics in unmodified advanced CMOS microelectronics chips

NASA Astrophysics Data System (ADS)

Wade, Mark T.; Shainline, Jeffrey M.; Orcutt, Jason S.; Ram, Rajeev J.; Stojanovic, Vladimir; Popovic, Milos A.

2014-03-01

We present the spoked-ring microcavity, a nanophotonic building block enabling energy-efficient, active photonics in unmodified, advanced CMOS microelectronics processes. The cavity is realized in the IBM 45nm SOI CMOS process - the same process used to make many commercially available microprocessors including the IBM Power7 and Sony Playstation 3 processors. In advanced SOI CMOS processes, no partial etch steps and no vertical junctions are available, which limits the types of optical cavities that can be used for active nanophotonics. To enable efficient active devices with no process modifications, we designed a novel spoked-ring microcavity which is fully compatible with the constraints of the process. As a modulator, the device leverages the sub-100nm lithography resolution of the process to create radially extending p-n junctions, providing high optical fill factor depletion-mode modulation and thereby eliminating the need for a vertical junction. The device is made entirely in the transistor active layer, low-loss crystalline silicon, which eliminates the need for a partial etch commonly used to create ridge cavities. In this work, we present the full optical and electrical design of the cavity including rigorous mode solver and FDTD simulations to design the Qlimiting electrical contacts and the coupling/excitation. We address the layout of active photonics within the mask set of a standard advanced CMOS process and show that high-performance photonic devices can be seamlessly monolithically integrated alongside electronics on the same chip. The present designs enable monolithically integrated optoelectronic transceivers on a single advanced CMOS chip, without requiring any process changes, enabling the penetration of photonics into the microprocessor.

SiNOI and AlGaAs-on-SOI nonlinear circuits for continuum generation in Si photonics

NASA Astrophysics Data System (ADS)

El Dirani, Houssein; Monat, Christelle; Brision, Stéphane; Olivier, Nicolas; Jany, Christophe; Letartre, Xavier; Pu, Minhao; Girouard, Peter D.; Hagedorn Frandsen, Lars; Semenova, Elizaveta; Katsuo Oxenløwe, Leif; Yvind, Kresten; Sciancalepore, Corrado

2018-02-01

In this communication, we report on the design, fabrication, and testing of Silicon Nitride on Insulator (SiNOI) and Aluminum-Gallium-Arsenide (AlGaAs) on silicon-on-insulator (SOI) nonlinear photonic circuits for continuum generation in Silicon (Si) photonics. As recently demonstrated, the generation of frequency continua and supercontinua can be used to overcome the intrinsic limitations of nowadays silicon photonics notably concerning the heterogeneous integration of III-V on SOI lasers for datacom and telecom applications. By using the Kerr nonlinearity of monolithic silicon nitride and heterointegrated GaAs-based alloys on SOI, the generation of tens or even hundreds of new optical frequencies can be obtained in dispersion tailored waveguides, thus providing an all-optical alternative to the heterointegration of hundreds of standalone III-V on Si lasers. In our work, we present paths to energy-efficient continua generation on silicon photonics circuits. Notably, we demonstrate spectral broadening covering the full C-band via Kerrbased self-phase modulation in SiNOI nanowires featuring full process compatibility with Si photonic devices. Moreover, AlGaAs waveguides are heterointegrated on SOI in order to dramatically reduce (x1/10) thresholds in optical parametric oscillation and in the power required for supercontinuum generation under pulsed pumping. The manufacturing techniques allowing the monolithic co-integration of nonlinear functionalities on existing CMOS-compatible Si photonics for both active and passive components will be shown. Experimental evidence based on self-phase modulation show SiNOI and AlGaAs nanowires capable of generating wide-spanning frequency continua in the C-Band. This will pave the way for low-threshold power-efficient Kerr-based comb- and continuum- sources featuring compatibility with Si photonic integrated circuits (Si-PICs).

Multilevel photonic modules for millimeter-wave phased-array antennas

NASA Astrophysics Data System (ADS)

Paolella, Arthur C.; Joshi, Abhay M.; Wright, James G.; Coryell, Louis A.

1998-11-01

Optical signal distribution for phased array antennas in communication system is advantageous to designers. By distributing the microwave and millimeter wave signal through optical fiber there is the potential for improved performance and lower weight. In addition when applied to communication satellites this weight saving translates into substantially reduced launch costs. The goal of the Phase I Small Business Innovation Research (SBIR) Program is the development of multi-level photonic modules for phased array antennas. The proposed module with ultimately comprise of a monolithic, InGaAs/InP p-i-n photodetector-p-HEMT power amplifier, opto-electronic integrated circuit, that has 44 GHz bandwidth and output power of 50 mW integrated with a planar antenna. The photodetector will have a high quantum efficiency and will be front-illuminated, thereby improved optical performance. Under Phase I a module was developed using standard MIC technology with a high frequency coaxial feed interconnect.

Monolithic integration of multiple wavelength vertical-cavity surface-emitting lasers by mask molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Ogura, Ichiro; Sugimoto, Yoshimasa; Kasahara, Kenichi

1995-05-01

The monolithic incorporation and performance of vertical-cavity surface-emitting lasers (VCSELs) emitting at two distinct wavelengths, which were suited for application to wavelength division multiplexing (WDM) systems were reported. The monolithic integration of two-wavelength VCSEL arrays was achieved by using mask molecular beam epitaxy. This method can generate arrays that have the desired integration area size and wavelength separation.

Deep Proton Writing for the rapid prototyping of polymer micro-components for optical interconnects and optofluidics

NASA Astrophysics Data System (ADS)

Van Erps, Jürgen; Vervaeke, Michael; Ottevaere, Heidi; Hermanne, Alex; Thienpont, Hugo

2013-07-01

The use of photonics in data communication and numerous other industrial applications brought plenty of prospects for innovation and opened up different unexplored market opportunities. This is a major driving force for the fabrication of micro-optical and micro-mechanical structures and their accurate alignment and integration into opto-mechanical modules and systems. To this end, we present Deep Proton Writing (DPW) as a powerful rapid prototyping technology for such micro-components. The DPW process consists of bombarding polymer samples (PMMA or SU-8) with swift protons, which results after chemical processing steps in high-quality micro-optical components. One of the strengths of the DPW micro-fabrication technology is the ability to fabricate monolithic building blocks that include micro-optical and mechanical functionalities which can be precisely integrated into more complex photonic systems. In this paper we comment on how we shifted from using 8.3 to 16.5 MeV protons for DPW and give some examples of micro-optical and micro-mechanical components recently fabricated through DPW, targeting applications in optical interconnections and in optofluidics.

Synchronous OEIC Integrating Receiver for Optically Reconfigurable Gate Arrays

PubMed Central

Sánchez-Azqueta, Carlos; Goll, Bernhard; Celma, Santiago; Zimmermann, Horst

2016-01-01

A monolithically integrated optoelectronic receiver with a low-capacitance on-chip pin photodiode is presented. The receiver is fabricated in a 0.35 μm opto-CMOS process fed at 3.3 V and due to the highly effective integrated pin photodiode it operates at μW. A regenerative latch acting as a sense amplifier leads in addition to a low electrical power consumption. At 400 Mbit/s, sensitivities of −26.0 dBm and −25.5 dBm are achieved, respectively, for λ = 635 nm and λ = 675 nm (BER = 10−9 ) with an energy efficiency of 2 pJ/bit. PMID:27231915

Monolithic photonic integration technology platform and devices at wavelengths beyond 2μm for gas spectroscopy applications

NASA Astrophysics Data System (ADS)

Latkowski, S.; van Veldhoven, P. J.; Hänsel, A.; D'Agostino, D.; Rabbani-Haghighi, H.; Docter, B.; Bhattacharya, N.; Thijs, P. J. A.; Ambrosius, H. P. M. M.; Smit, M. K.; Williams, K. A.; Bente, E. A. J. M.

2017-02-01

In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar, but-joint, active-passive integration on indium phosphide substrate with active components based on strained InGaAs quantum wells. Using this limited set of basic building blocks a novel geometry, widely tunable laser source was designed and fabricated within the first long wavelength multiproject wafer run. The fabricated laser operates around 2027 nm, covers a record tuning range of 31 nm and is successfully employed in absorption measurements of carbon dioxide. These results demonstrate a fully functional long wavelength photonic integrated circuit that operates at these wavelengths. Moreover, the process steps and material system used for the long wavelength technology are almost identical to the ones which are used in the technology process at 1.5μm which makes it straightforward and hassle-free to transfer to the photonic foundries with existing fabrication lines. The changes from the 1550 nm technology and the trade-offs made in the building block design and layer stack will be discussed.

Optically controlled low-power on-off mode resonant tunneling oscillator with a heterojunction phototransistor switch.

PubMed

Lee, Kiwon; Park, Jaehong; Lee, Jooseok; Yang, Kyounghoon

2015-03-15

We report an optically controlled low-power on-off mode oscillator based on a resonant tunneling diode (RTD) that is monolithically integrated with a heterojunction phototransistor (HPT) optical switch. In order to achieve a low-power operation at a wavelength of 1.55 μm an InP-based quantum-effect tunneling diode is used for microwave signal generation based on a unique negative differential conductance (NDC) characteristic of the RTD at a low applied voltage. In addition, the high-gain HPT is used for converting incident optical data to an electrical data signal. The fabricated on-off mode oscillator shows a low-power consumption of 5 mW and a high-data-rate of 1  Gb/s at an oscillation frequency of 4.7 GHz. A good energy efficiency of 5  pJ/bit has been obtained due to the low DC power consumption along with high-data-rate performance of the RTD-based optoelectronic integration scheme.

A monolithic integrated micro direct methanol fuel cell based on sulfo functionalized porous silicon

NASA Astrophysics Data System (ADS)

Wang, M.; Lu, Y. X.; Liu, L. T.; Wang, X. H.

2016-11-01

In this paper, we demonstrate a monolithic integrated micro direct methanol fuel cell (μDMFC) for the first time. The monolithic integrated μDMFC combines proton exchange membrane (PEM) and Pt nanocatalysts, in which PEM is achieved by the functionalized porous silicon membrane and 3D Pt nanoflowers being synthesized in situ on it as catalysts. Sulfo groups functionalized porous silicon membrane serves as a PEM and a catalyst support simultaneously. The μDMFC prototype achieves an open circuit voltage of 0.3 V, a maximum power density of 5.5 mW/cm2. The monolithic integrated μDMFC offers several desirable features such as compatibility with micro fabrication techniques, an undeformable solid PEM and the convenience of assembly.

Microwave characteristics of GaAs MMIC integratable optical detectors

NASA Technical Reports Server (NTRS)

Claspy, Paul C.; Hill, Scott M.; Bhasin, Kul B.

1989-01-01

Interdigitated photoconductive detectors were fabricated on microwave device structures, making them easily integratable with Monolithic Microwave Integrated Circuits (MMIC). Detector responsivity as high as 2.5 A/W and an external quantum efficiency of 3.81 were measured. Response speed was nearly independent of electrode geometry, and all detectors had usable response at frequencies to 6 GHz. A small signal model of the detectors based on microwave measurements was also developed.

Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems

NASA Astrophysics Data System (ADS)

Ku, Walter H.; Gang, Guan-Wan; He, J. Q.; Ichitsubo, I.

1988-05-01

This final technical report presents results on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. New results include analytical and computer aided device models of GaAs MESFETs and HEMTs or MODFETs, new synthesis techniques for monolithic feedback and distributed amplifiers and a new nonlinear CAD program for MIMIC called CADNON. This program incorporates the new MESFET and HEMT model and has been successfully applied to the design of monolithic millimeter-wave mixers.

InP-based monolithically integrated 1310/1550nm diplexer/triplexer

NASA Astrophysics Data System (ADS)

Silfvenius, C.; Swillo, M.; Claesson, J.; Forsberg, E.; Akram, N.; Chacinski, M.; Thylén, L.

2008-11-01

Multiple streams of high definition television (HDTV) and improved home-working infrastructure are currently driving forces for potential fiber to the home (FTTH) customers [1]. There is an interest to reduce the cost and physical size of the FTTH equipment. The current fabrication methods have reached a cost minimum. We have addressed the costchallenge by developing 1310/(1490)/1550nm bidirectional diplexers, by monolithic seamless integration of lasers, photodiodes and wavelength division multiplexing (WDM) couplers into one single InP-based device. A 250nm wide optical gain profile covers the spectrum from 1310 to 1550nm and is the principal building block. The device fabrication is basically based on the established configuration of using split-contacts on continuos waveguides. Optical and electrical cross-talks are further addressed by using a Y-configuration to physically separate the components from each other and avoid inline configurations such as when the incoming signal travels through the laser component or vice versa. By the eliminated butt-joint interfaces which can reflect light between components or be a current leakage path and by leaving optically absorbing (unpumped active) material to surround the components to absorb spontaneous emission and nonintentional reflections the devices are optically and electrically isolated from each other. Ridge waveguides (RWG) form the waveguides and which also maintain the absorbing material between them. The WDM functionality is designed for a large optical bandwidth complying with the wide spectral range in FTTH applications and also reducing the polarization dependence of the WDM-coupler. Lasing is achieved by forming facet-free, λ/4-shifted, DFB (distributed feedback laser) lasers emitting directly into the waveguide. The photodiodes are waveguide photo-diodes (WGPD). Our seamless technology is also able to array the single channel diplexers to 4 to 12 channel diplexer arrays with 250μm fiber port waveguide spacing to comply with fiber optic ribbons. This is an important feature in central office applications were small physical space is important.

High-speed detection at two micrometres with monolithic silicon photodiodes

NASA Astrophysics Data System (ADS)

Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

2015-06-01

With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Zhuan; Yuan, Jiangtan; Zhou, Haiqing

The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. A major challenge to this integration is the identification of suitable materials that can emit and absorb light at the same wavelength. In this paper we utilize unique excitonic transitions in WS 2 monolayers and show that WS 2 exhibits a perfect overlap between its absorption and photoluminescence spectra. By coupling WS 2 to Ag nanowires, we then show that WS 2 monolayers are able to excite and absorb surface plasmons of Ag nanowires at the same wavelength of exciton photoluminescence. This resonant absorptionmore » by WS 2 is distinguished from that of the ohmic propagation loss of silver nanowires, resulting in a short propagation length of surface plasmons. Our demonstration of resonant optical generation and detection of surface plasmons enables nanoscale optical communication and paves the way for on-chip electronic–photonic integrated circuits.« less

Advanced indium phosphide based monolithic integration using quantum well intermixing and MOCVD regrowth

NASA Astrophysics Data System (ADS)

Raring, James W.

The proliferation of the internet has fueled the explosive growth of telecommunications over the past three decades. As a result, the demand for communication systems providing increased bandwidth and flexibility at lower cost continues to rise. Lightwave communication systems meet these demands. The integration of multiple optoelectronic components onto a single chip could revolutionize the photonics industry. Photonic integrated circuits (PIC) provide the potential for cost reduction, decreased loss, decreased power consumption, and drastic space savings over conventional fiber optic communication systems comprised of discrete components. For optimal performance, each component within the PIC may require a unique epitaxial layer structure, band-gap energy, and/or waveguide architecture. Conventional integration methods facilitating such flexibility are increasingly complex and often result in decreased device yield, driving fabrication costs upward. It is this trade-off between performance and device yield that has hindered the scaling of photonic circuits. This dissertation presents high-functionality PICs operating at 10 and 40 Gb/s fabricated using novel integration technologies based on a robust quantum-well-intermixing (QWI) method and metal organic chemical vapor deposition (MOCVD) regrowth. We optimize the QWI process for the integration of high-performance quantum well electroabsorption modulators (QW-EAM) with sampled-grating (SG) DBR lasers to demonstrate the first widely-tunable negative chirp 10 and 40 Gb/s EAM based transmitters. Alone, QWI does not afford the integration of high-performance semiconductor optical amplifiers (SOA) and photodetectors with the transmitters. To overcome this limitation, we have developed a novel high-flexibility integration scheme combining MOCVD regrowth with QWI to merge low optical confinement factor SOAs and 40 Gb/s uni-traveling carrier (UTC) photodiodes on the same chip as the QW-EAM based transmitters. These high-saturation power receiver structures represent the state-of-the-art technologies for even discrete components. Using the novel integration technology, we present the first widely-tunable single-chip device capable of transmit and receive functionality at 40 Gb/s. This device monolithically integrates tunable lasers, EAMs, SOAs, and photodetectors with performance that rivals optimized discrete components. The high-flexibility integration scheme requires only simple blanket regrowth steps and thus breaks the performance versus yield trade-off plaguing conventional fabrication techniques employed for high-functionality PICs.

Monolithic Perovskite Silicon Tandem Solar Cells with Advanced Optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldschmidt, Jan C.; Bett, Alexander J.; Bivour, Martin

2016-11-14

For high efficiency monolithic perovskite silicon tandem solar cells, we develop low-temperature processes for the perovskite top cell, rear-side light trapping, optimized perovskite growth, transparent contacts and adapted characterization methods.

Micromechanical Switches on GaAs for Microwave Applications

NASA Technical Reports Server (NTRS)

Randall, John N.; Goldsmith, Chuck; Denniston, David; Lin, Tsen-Hwang

1995-01-01

In this presentation, we describe the fabrication of micro-electro-mechanical system (MEMS) devices, in particular, of low-frequency multi-element electrical switches using SiO2 cantilevers. The switches discussed are related to micromechanical membrane structures used to perform switching of optical signals on silicon substrates. These switches use a thin metal membrane which is actuated by an electrostatic potential, causing the switch to make or break contact. The advantages include: superior isolation, high power handling capabilities, high radiation hardening, very low power operations, and the ability to integrate onto GaAs monolithic microwave integrated circuit (MMIC) chips.

Direct generation of vector vortex beams with switchable radial and azimuthal polarizations in a monolithic Nd:YAG microchip laser

NASA Astrophysics Data System (ADS)

He, Hong-Sen; Chen, Zhen; Dong, Jun

2017-05-01

A hollow focus lens (HFL) has been designed to effectively produce a focused annular beam for high-intensity pumping. By applying the central-dark pump beam, a monolithic Nd:YAG microchip laser without any extra optical elements is demonstrated to generate vector vortex beams with switchable radially polarized (RP) and azimuthally polarized (AP) states by easily controlling the pump power. The order and handedness of the output vortex beam remain stable during the switching of the RP and AP states. The monolithic Nd:YAG microchip laser provides a new laser source for applications such as material processing and optical manipulation.

IFU simulator: a powerful alignment and performance tool for MUSE instrument

NASA Astrophysics Data System (ADS)

Laurent, Florence; Boudon, Didier; Daguisé, Eric; Dubois, Jean-Pierre; Jarno, Aurélien; Kosmalski, Johan; Piqueras, Laure; Remillieux, Alban; Renault, Edgard

2014-07-01

MUSE (Multi Unit Spectroscopic Explorer) is a second generation Very Large Telescope (VLT) integral field spectrograph (1x1arcmin² Field of View) developed for the European Southern Observatory (ESO), operating in the visible wavelength range (0.465-0.93 μm). A consortium of seven institutes is currently commissioning MUSE in the Very Large Telescope for the Preliminary Acceptance in Chile, scheduled for September, 2014. MUSE is composed of several subsystems which are under the responsibility of each institute. The Fore Optics derotates and anamorphoses the image at the focal plane. A Splitting and Relay Optics feed the 24 identical Integral Field Units (IFU), that are mounted within a large monolithic instrument mechanical structure. Each IFU incorporates an image slicer, a fully refractive spectrograph with VPH-grating and a detector system connected to a global vacuum and cryogenic system. During 2012 and 2013, all MUSE subsystems were integrated, aligned and tested to the P.I. institute at Lyon. After successful PAE in September 2013, MUSE instrument was shipped to the Very Large Telescope in Chile where that was aligned and tested in ESO integration hall at Paranal. After, MUSE was directly transferred in monolithic way without dismounting onto VLT telescope where the first light was overcame. This talk describes the IFU Simulator which is the main alignment and performance tool for MUSE instrument. The IFU Simulator mimics the optomechanical interface between the MUSE pre-optic and the 24 IFUs. The optomechanical design is presented. After, the alignment method of this innovative tool for identifying the pupil and image planes is depicted. At the end, the internal test report is described. The success of the MUSE alignment using the IFU Simulator is demonstrated by the excellent results obtained onto MUSE positioning, image quality and throughput. MUSE commissioning at the VLT is planned for September, 2014.

Semiconductor optoelectronic devices for free-space optical communications

NASA Technical Reports Server (NTRS)

Katz, J.

1983-01-01

The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

A silicon Brillouin laser

NASA Astrophysics Data System (ADS)

Otterstrom, Nils T.; Behunin, Ryan O.; Kittlaus, Eric A.; Wang, Zheng; Rakich, Peter T.

2018-06-01

Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are markedly weak in conventional silicon photonic waveguides, stifling progress toward silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. In this study, we have harnessed these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters a regime of dynamics in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.

Ceramic microsystem incorporating a microreactor with immobilized biocatalyst for enzymatic spectrophotometric assays.

PubMed

Baeza, Mireia; López, Carmen; Alonso, Julián; López-Santín, Josep; Alvaro, Gregorio

2010-02-01

Low-temperature cofired ceramics (LTCC) technology is a versatile fabrication technique used to construct microflow systems. It permits the integration of several unitary operations (pretreatment, separation, (bio)chemical reaction, and detection stage) of an analytical process in a modular or monolithic way. Moreover, because of its compatibility with biological material, LTCC is adequate for analytical applications based on enzymatic reactions. Here we present the design, construction, and evaluation of a LTCC microfluidic system that integrates a microreactor (internal volume, 24.28 microL) with an immobilized beta-galactosidase from Escherichia coli (0.479 activity units) and an optical flow cell to measure the product of the enzymatic reaction. The enzyme was immobilized on a glyoxal-agarose support, maintaining its activity along the time of the study. As a proof of concept, the LTCC-beta-galactosidase system was tested by measuring the conversion of ortho-nitrophenyl beta-D-galactopyranoside, the substrate usually employed for activity determinations. Once packed in a monolithically integrated microcolumn, the miniaturized flow system was characterized, the operational conditions optimized (flow rate and injection volume), and its performance successfully evaluated by determining the beta-galactosidase substrate concentration at the millimolar level.

Excitonic Resonant Emission–Absorption of Surface Plasmons in Transition Metal Dichalcogenides for Chip-Level Electronic–Photonic Integrated Circuits

DOE PAGES

Zhu, Zhuan; Yuan, Jiangtan; Zhou, Haiqing; ...

2016-04-19

The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. A major challenge to this integration is the identification of suitable materials that can emit and absorb light at the same wavelength. In this paper we utilize unique excitonic transitions in WS 2 monolayers and show that WS 2 exhibits a perfect overlap between its absorption and photoluminescence spectra. By coupling WS 2 to Ag nanowires, we then show that WS 2 monolayers are able to excite and absorb surface plasmons of Ag nanowires at the same wavelength of exciton photoluminescence. This resonant absorptionmore » by WS 2 is distinguished from that of the ohmic propagation loss of silver nanowires, resulting in a short propagation length of surface plasmons. Our demonstration of resonant optical generation and detection of surface plasmons enables nanoscale optical communication and paves the way for on-chip electronic–photonic integrated circuits.« less

Design optimization of integrated BiDi triplexer optical filter based on planar lightwave circuit.

PubMed

Xu, Chenglin; Hong, Xiaobin; Huang, Wei-Ping

2006-05-29

Design optimization of a novel integrated bi-directional (BiDi) triplexer filter based on planar lightwave circuit (PLC) for fiber-to-the premise (FTTP) applications is described. A multi-mode interference (MMI) device is used to filter the up-stream 1310nm signal from the down-stream 1490nm and 1555nm signals. An array waveguide grating (AWG) device performs the dense WDM function by further separating the two down-stream signals. The MMI and AWG are built on the same substrate with monolithic integration. The design is validated by simulation, which shows excellent performance in terms of filter spectral characteristics (e.g., bandwidth, cross-talk, etc.) as well as insertion loss.

Design optimization of integrated BiDi triplexer optical filter based on planar lightwave circuit

NASA Astrophysics Data System (ADS)

Xu, Chenglin; Hong, Xiaobin; Huang, Wei-Ping

2006-05-01

Design optimization of a novel integrated bi-directional (BiDi) triplexer filter based on planar lightwave circuit (PLC) for fiber-to-the premise (FTTP) applications is described. A multi-mode interference (MMI) device is used to filter the up-stream 1310nm signal from the down-stream 1490nm and 1555nm signals. An array waveguide grating (AWG) device performs the dense WDM function by further separating the two down-stream signals. The MMI and AWG are built on the same substrate with monolithic integration. The design is validated by simulation, which shows excellent performance in terms of filter spectral characteristics (e.g., bandwidth, cross-talk, etc.) as well as insertion loss.

Fiber IFU unit for the second generation VLT spectrograph KMOS

NASA Astrophysics Data System (ADS)

Tomono, Daigo; Weisz, Harald; Hofmann, Reiner

2003-03-01

KMOS is a cryogenic multi-object near-infrared spectrograph for the VLT. It will be equipped with about 20 deployable integral field units (IFUs) which can be positioned anywhere in the 7.2 arcmin diameter field o the VLT Nasmyth focus by a cryogenic robot. We describe IFUs using micro lens arrays and optical fibers to arrange the two-dimensional fields from the IFUs on the spectrograph entrance slit. Each micro-lens array is mounted in a spider arm which also houses the pre-optics with a cold stop. The spider arms are positioned by a cryogenic robot which is built around the image plane. For the IFUs, two solutions are considered: monolithic mirco-lens arrays with fibers attached to the back where the entrance pupil is imaged, and tapered fibers with integrated lenses which are bundled together to form a lens array. The flexibility of optical fibers relaxes boundary conditions for integration of the instrument components. On the other hand, FRD and geometric characteristics of optical fibers leads to higher AΩ accepted by the spectrograph. Conceptual design of the instrument is presented as well as advantages and disadvantages of the fiber IFUs.

ATLAST-8 Mission Concept Study for 8-Meter Monolithic UV/Optical Space Telescope

NASA Technical Reports Server (NTRS)

Stahl, H. Philip; Postman, Marc; Arnold, William R., Sr.; Hopkins, Randall C.; Hornsby, Linda; Mosier, Gary E.; Pasquale, Bert A.

2010-01-01

ATLAST-8m is an 8-meter monolithic UV/optical/NIR space observatory which could be placed in orbit at Sun-Earth L2 by a heavily lift launch vehicle. Two development study cycles have resulted in a detailed concept including a dual foci optical design; several primary mirror launch support and secondary mirror support structural designs; spacecraft propulsion, power and pointing control design; and thermal design. ATLAST-8m is designed to yield never before achieved performance to obtain fundamental astronomical breakthroughs

Electrically-driven GHz range ultrafast graphene light emitter (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kim, Youngduck; Gao, Yuanda; Shiue, Ren-Jye; Wang, Lei; Aslan, Ozgur Burak; Kim, Hyungsik; Nemilentsau, Andrei M.; Low, Tony; Taniguchi, Takashi; Watanabe, Kenji; Bae, Myung-Ho; Heinz, Tony F.; Englund, Dirk R.; Hone, James

2017-02-01

Ultrafast electrically driven light emitter is a critical component in the development of the high bandwidth free-space and on-chip optical communications. Traditional semiconductor based light sources for integration to photonic platform have therefore been heavily studied over the past decades. However, there are still challenges such as absence of monolithic on-chip light sources with high bandwidth density, large-scale integration, low-cost, small foot print, and complementary metal-oxide-semiconductor (CMOS) technology compatibility. Here, we demonstrate the first electrically driven ultrafast graphene light emitter that operate up to 10 GHz bandwidth and broadband range (400 1600 nm), which are possible due to the strong coupling of charge carriers in graphene and surface optical phonons in hBN allow the ultrafast energy and heat transfer. In addition, incorporation of atomically thin hexagonal boron nitride (hBN) encapsulation layers enable the stable and practical high performance even under the ambient condition. Therefore, electrically driven ultrafast graphene light emitters paves the way towards the realization of ultrahigh bandwidth density photonic integrated circuits and efficient optical communications networks.

Monolithic graphene transistor biointerface.

PubMed

Nam, SungWoo; Lee, Mi-Sun; Park, Jang-Ung

2012-01-01

We report monolithic integration of graphene and graphite for all-carbon integrated bioelectronics. First, we demonstrate that the electrical properties of graphene and graphite can be modulated by controlling the number of graphene layers, and such capabilities allow graphene to be used as active channels and graphite as metallic interconnects for all-carbon bioelectronics. Furthermore, we show that monolithic graphene-graphite devices exhibit mechanical flexibility and robustness while their electrical responses are not perturbed by mechanical deformation, demonstrating their unique electromechanical properties. Chemical sensing capability of all-carbon integrated bioelectronics is manifested in real-time, complementary pH detection. These unique capabilities of our monolithic graphene-graphite bioelectronics could be exploited in chemical and biological detection and conformal interface with biological systems in the future.

Optical micro-cavities on silicon

NASA Astrophysics Data System (ADS)

Dai, Daoxin; Liu, Erhu; Tan, Ying

2018-01-01

Silicon-based optical microcavities are very popular for many applications because of the ultra-compact footprint, easy scalability, and functional versatility. In this paper we give a discussion about the challenges of the optical microcavities on silicon and also give a review of our recent work, including the following parts. First, a near-"perfect" high-order MRR optical filter with a box-like filtering response is realized by introducing bent directional couplers to have sufficient coupling between the access waveguide and the microrings. Second, an efficient thermally-tunable MRR-based optical filter with graphene transparent nano-heater is realized by introducing transparent graphene nanoheaters. Thirdly, a polarization-selective microring-based optical filter is realized to work with resonances for only one of TE and TM polarizations for the first time. Finally, a on-chip reconfigurable optical add-drop multiplexer for hybrid mode- /wavelength-division-multiplexing systems is realized for the first time by monolithically integrating a mode demultiplexer, four MRR optical switches, and a mode multiplexer.

Monolithically Integrated Mid-Infrared Quantum Cascade Laser and Detector

PubMed Central

Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

2013-01-01

We demonstrate the monolithic integration of a mid-infrared laser and detector utilizing a bi-functional quantum cascade active region. When biased, this active region provides optical gain, while it can be used as a detector at zero bias. With our novel approach we can measure the light intensity of the laser on the same chip without the need of external lenses or detectors. Based on a bound-to-continuum design, the bi-functional active region has an inherent broad electro-luminescence spectrum of 200 cm−1, which indicate sits use for single mode laser arrays. We have measured a peak signal of 191.5 mV at theon-chip detector, without any amplification. The room-temperature pulsed emission with an averaged power consumption of 4 mW and the high-speed detection makes these devices ideal for low-power sensors. The combination of the on-chip detection functionality, the broad emission spectrum and the low average power consumption indicates the potential of our bi-functional quantum cascade structures to build a mid-infrared lab-on-a-chip based on quantum cascade laser technology. PMID:23389348

CMOS-compatible InP/InGaAs digital photoreceiver

DOEpatents

Lovejoy, Michael L.; Rose, Benny H.; Craft, David C.; Enquist, Paul M.; Slater, Jr., David B.

1997-01-01

A digital photoreceiver is formed monolithically on an InP semiconductor substrate and comprises a p-i-n photodetector formed from a plurality of InP/InGaAs layers deposited by an epitaxial growth process and an adjacent heterojunction bipolar transistor (HBT) amplifier formed from the same InP/InGaAs layers. The photoreceiver amplifier operates in a large-signal mode to convert a detected photocurrent signal into an amplified output capable of directly driving integrated circuits such as CMOS. In combination with an optical transmitter, the photoreceiver may be used to establish a short-range channel of digital optical communications between integrated circuits with applications to multi-chip modules (MCMs). The photoreceiver may also be used with fiber optic coupling for establishing longer-range digital communications (i.e. optical interconnects) between distributed computers or the like. Arrays of digital photoreceivers may be formed on a common substrate for establishing a plurality of channels of digital optical communication, with each photoreceiver being spaced by less than about 1 mm and consuming less than about 20 mW of power, and preferably less than about 10 mW. Such photoreceiver arrays are useful for transferring huge amounts of digital data between integrated circuits at bit rates of up to about 1000 Mb/s or more.

CMOS-compatible InP/InGaAs digital photoreceiver

DOEpatents

Lovejoy, M.L.; Rose, B.H.; Craft, D.C.; Enquist, P.M.; Slater, D.B. Jr.

1997-11-04

A digital photoreceiver is formed monolithically on an InP semiconductor substrate and comprises a p-i-n photodetector formed from a plurality of InP/InGaAs layers deposited by an epitaxial growth process and an adjacent heterojunction bipolar transistor (HBT) amplifier formed from the same InP/InGaAs layers. The photoreceiver amplifier operates in a large-signal mode to convert a detected photocurrent signal into an amplified output capable of directly driving integrated circuits such as CMOS. In combination with an optical transmitter, the photoreceiver may be used to establish a short-range channel of digital optical communications between integrated circuits with applications to multi-chip modules (MCMs). The photoreceiver may also be used with fiber optic coupling for establishing longer-range digital communications (i.e. optical interconnects) between distributed computers or the like. Arrays of digital photoreceivers may be formed on a common substrate for establishing a plurality of channels of digital optical communication, with each photoreceiver being spaced by less than about 1 mm and consuming less than about 20 mW of power, and preferably less than about 10 mW. Such photoreceiver arrays are useful for transferring huge amounts of digital data between integrated circuits at bit rates of up to about 1,000 Mb/s or more. 4 figs.

Mechanical monolithic horizontal sensor for low frequency seismic noise measurement

NASA Astrophysics Data System (ADS)

Acernese, Fausto; Giordano, Gerardo; Romano, Rocco; De Rosa, Rosario; Barone, Fabrizio

2008-07-01

This paper describes a mechanical monolithic horizontal sensor for geophysical applications developed at the University of Salerno. The instrument is basically a monolithic tunable folded pendulum, shaped with precision machining and electric discharge machining, that can be used both as seismometer and, in a force-feedback configuration, as accelerometer. The monolithic mechanical design and the introduction of laser interferometric techniques for the readout implementation makes it a very compact instrument, very sensitive in the low frequency seismic noise band, with a very good immunity to environmental noises. Many changes have been produced since last version (2007), mainly aimed to the improvement of the mechanics and of the optical readout of the instrument. In fact, we have developed and tested a prototype with elliptical hinges and mechanical tuning of the resonance frequency together with a laser optical lever and a new laser interferometer readout system. The theoretical sensitivity curve for both laser optical lever and laser interferometric readouts, evaluated on the basis of suitable theoretical models, shows a very good agreement with the experimental measurements. Very interesting scientific result is the measured natural resonance frequency of the instrument of 70mHz with a Q =140 in air without thermal stabilization. This result demonstrates the feasibility of a monolithic folded pendulum sensor with a natural resonance frequency of the order of millihertz with a more refined mechanical tuning.

Mechanical monolithic sensor for low frequency seismic noise measurement

NASA Astrophysics Data System (ADS)

Acernese, Fausto; De Rosa, Rosario; Giordano, Gerardo; Romano, Rocco; Barone, Fabrizio

2007-10-01

This paper describes a mechanical monolithic sensor for geophysical applications developed at the University of Salerno. The instrument is basically a monolithic tunable folded pendulum, shaped with precision machining and electric-discharge-machining, that can be used both as seismometer and, in a force-feedback configuration, as accelerometer. The monolithic mechanical design and the introduction of laser interferometric techniques for the readout implementation make it a very compact instrument, very sensitive in the low-frequency seismic noise band, with a very good immunity to environmental noises. Many changes have been produced since last version (2006), mainly aimed to the improvement of the mechanics and of the optical readout of the instrument. In fact, we have developed and tested a prototype with elliptical hinges and mechanical tuning of the resonance frequency together with a new laser optical lever and laser interferometer readout system. The theoretical sensitivity curve for both laser optical lever and laser interferometric readouts, calculated on the basis of suitable theoretical models, shows a very good agreement with the experimental measurements. Very interesting scientific result is that the measured natural resonance frequency of the instrument is ~ 70mHz with a Q ~ 140 in air without thermal stabilization, demonstrating the feasibility of a monolithic FP sensor with a natural resonance frequency of the order of 5 mHz with a more refined mechanical tuning.

Mechanical monolithic horizontal sensor for low frequency seismic noise measurement.

PubMed

Acernese, Fausto; Giordano, Gerardo; Romano, Rocco; De Rosa, Rosario; Barone, Fabrizio

2008-07-01

This paper describes a mechanical monolithic horizontal sensor for geophysical applications developed at the University of Salerno. The instrument is basically a monolithic tunable folded pendulum, shaped with precision machining and electric discharge machining, that can be used both as seismometer and, in a force-feedback configuration, as accelerometer. The monolithic mechanical design and the introduction of laser interferometric techniques for the readout implementation makes it a very compact instrument, very sensitive in the low frequency seismic noise band, with a very good immunity to environmental noises. Many changes have been produced since last version (2007), mainly aimed to the improvement of the mechanics and of the optical readout of the instrument. In fact, we have developed and tested a prototype with elliptical hinges and mechanical tuning of the resonance frequency together with a laser optical lever and a new laser interferometer readout system. The theoretical sensitivity curve for both laser optical lever and laser interferometric readouts, evaluated on the basis of suitable theoretical models, shows a very good agreement with the experimental measurements. Very interesting scientific result is the measured natural resonance frequency of the instrument of 70 mHz with a Q=140 in air without thermal stabilization. This result demonstrates the feasibility of a monolithic folded pendulum sensor with a natural resonance frequency of the order of millihertz with a more refined mechanical tuning.

On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

NASA Astrophysics Data System (ADS)

Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

2018-04-01

The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

Integrated device architectures for electrochromic devices

DOEpatents

Frey, Jonathan Mack; Berland, Brian Spencer

2015-04-21

This disclosure describes systems and methods for creating monolithically integrated electrochromic devices which may be a flexible electrochromic device. Monolithic integration of thin film electrochromic devices may involve the electrical interconnection of multiple individual electrochromic devices through the creation of specific structures such as conductive pathway or insulating isolation trenches.

UTSA-16 Growth within 3D-Printed Co-Kaolin Monoliths with High Selectivity for CO2/CH4, CO2/N2, and CO2/H2 Separation.

PubMed

Lawson, Shane; Al-Naddaf, Qasim; Krishnamurthy, Anirduh; Amour, Marc St; Griffin, Connor; Rownaghi, Ali A; Knox, James C; Rezaei, Fateme

2018-06-06

Honeycomb monoliths loaded with metal-organic frameworks (MOFs) are highly desirable adsorption contactors because of their low-pressure drop, rapid mass-transfer kinetics, and high-adsorption capacity. Moreover, three-dimensional (3D)-printing technology renders direct material modification a realistic and economic prospect. In this study, 3D printing was utilized to impregnate kaolin-based monolith with UTSA-16 metal formation precursor (Co), whereupon an internal growth was facilitated via a solvothermal synthesis approach. The cobalt weight loading in the kaolin support was varied systematically to optimize the MOF growth while retaining monolith mechanical integrity. The obtained UTSA-16 monolith with 90 wt % loading exhibited similar textural features and adsorption characteristics to its powder analogue while improving upon structural integrity. In comparison to previously developed 3D-printed UTSA-16 monoliths, the UTSA-16-kaolin monolith not only showed higher MOF loading but also higher compression stress, indicative of its robust structure. Furthermore, the 3D-printed UTSA-16-kaolin monolith displayed a comparable CO 2 adsorption capacity to the UTSA-16 powder (3.1 vs 3.5 mmol/g at 25 °C and 1 bar), which was proportional to its loading. Selectivity values of 49, 238, and 3725 were obtained for CO 2 /CH 4 , CO 2 /N 2 , and CO 2 /H 2 , respectively, demonstrating good separation potential of the 3D-printed MOF monolith for various gas mixtures, as determined by both equilibrium and dynamic adsorption measurements. Overall, this study provides a novel route for the fabrication of UTSA-16-loaded monoliths, which demonstrate both high MOF loading and mechanical integrity that could be readily applied to various CO 2 capture applications.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

NASA Astrophysics Data System (ADS)

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-09-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

PubMed Central

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-01-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage. PMID:27659796

The development and characterization of sol-gel substrates for chemical and optical applications

NASA Astrophysics Data System (ADS)

Powers, Kevin William

1998-12-01

The sol gel process can be used to make monolithic porous glass for various scientific and engineering uses. The porosity of the material imparts a large surface area which is advantageous in applications such as catalyst supports or in the study of surface mediated chemical reactions. The chemical stability and transparency of the porous glass also make it suitable for use in the emerging field of optical sensors. In this study fluoride catalysis is used to produce sol gel monoliths with pore radii of up to 400 Angstroms, four times larger than any previously reported using conventional drying techniques. Gel monoliths with pore radii of 200 Angstroms were found to have the best combination of surface area, pore volume and optical transparency. Typical monoliths have surface areas of 150 m2/g and pore volumes of 1.60 cm3/g with good transparency. The monoliths are chemically stable, have good mechanical strength and can be easily rehydrated without cracking. The substrates are also suitable for sintering into dense high purity silica glass with little tendency towards foaming. An in-depth study of the catalytic effect of fluoride on the sol gel process is also included. It has been theorized that fluoride serves to expand the coordination sphere of the silicon center making it more subject to nucleophilic attack. In this work an ion-specific fluoride electrode is used to monitor free fluoride concentrations in HF catalyzed sols while silicic acid is added in the form of tetramethoxysilane (TMOS). It is found that fluoride is rapidly bound by the silicic acid in a ratio of four to one, indicating the formation of silicon tetrafluoride. A concurrent decrease in pH suggests that a pentacoordinate species is formed that is more stable than previously thought. A polymerization mechanism is proposed that explains the hydrophobicity of fluoride catalyzed gels and the difficulty in retaining structural fluoride in fluoride catalyzed sol gel glasses. Finally, several porous monoliths are doped with colloidal gold and the optical properties evaluated as a function of heat treatment. This demonstrates the feasibility of using porous glass nanocomposites in sensors and other optical components.

Micro-Laser Range Finder Development: Using the Monolithic Approach

DTIC Science & Technology

1999-02-01

components can be joined together, optically aligned to form the laser cavity and then sliced to produce MLC modules . This batch process can greatly reduce...the overall fabrication costs of the µLRF system. The MLC module is ultra-compact. Its overall size is approximately 56 mm (L) x 3 mm (W) x 3 mm (H) as...MLC module is placed on a laser pallet for stiffness, mechanical stability. The laser pallet size is selected as part of the integration design

All-fiber Devices Based on Photonic Crystal Fibers with Integrated Electrodes

NASA Astrophysics Data System (ADS)

Chesini, Giancarlo; Cordeiro, Cristiano M. B.; de Matos, Christiano J. S.; Fokine, Michael; Carvalho, Isabel C. S.; Knighf, Jonathan C.

2008-10-01

A special kind of microstructured optical fiber was proposed and manufactured where, as well as the holey region (solid core and silica-air cladding), the fiber has also two large holes for electrode insertion. Bi-Sn and Au-Sn alloys were selectively inserted in those holes forming two parallel, continuous and homogeneous internal electrodes. We demonstrated the production of a monolithic device and its use to externally control some of the guidance properties (e.g. polarization) of the fiber.

AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster

NASA Astrophysics Data System (ADS)

Han, Sang-Woo; Jo, Min-Gi; Kim, Hyungtak; Cho, Chun-Hyung; Cha, Ho-Young

2017-08-01

This study investigates the effects of a monolithic gate current booster integrated with an AlGaN/GaN-on-Si power-switching device. The integrated gate current booster was implemented by a single-stage inverter topology consisting of a recessed normally-off AlGaN/GaN MOS-HFET and a mesa resistor. The monolithically integrated gate current booster in a switching FET eliminated the parasitic elements caused by external interconnection and enabled fast switching operation. The gate charging and discharging currents were boosted by the integrated inverter, which significantly reduced both rise and fall times: the rise time was reduced from 626 to 41.26 ns, while the fall time was reduced from 554 to 42.19 ns by the single-stage inverter. When the packaged monolithic power chip was tested under 1 MHz hard-switching operation with VDD = 200 V, the switching loss was found to have been drastically reduced, from 5.27 to 0.55 W.

Recent Updates to the Arnold Mirror Modeler and Integration into the Evolving NASA Overall Design System for Large Space-Based Optical Systems

NASA Technical Reports Server (NTRS)

Arnold, William R.

2015-01-01

Since last year, a number of expanded capabilities have been added to the modeler. The support the integration with thermal modeling, the program can now produce simplified thermal models with the same geometric parameters as the more detailed dynamic and even more refined stress models. The local mesh refinement and mesh improvement tools have been expanded and more user friendly. The goal is to provide a means of evaluating both monolithic and segmented mirrors to the same level of fidelity and loading conditions at reasonable man-power efforts. The paper will demonstrate most of these new capabilities.

Recent Updates to the Arnold Mirror Modeler and Integration into the Evolving NASA Overall Design System for Large Space Based Optical Systems

NASA Technical Reports Server (NTRS)

Arnold, William R., Sr.

2015-01-01

Since last year, a number of expanded capabilities have been added to the modeler. The support the integration with thermal modeling, the program can now produce simplified thermal models with the same geometric parameters as the more detailed dynamic and even more refined stress models. The local mesh refinement and mesh improvement tools have been expanded and more user friendly. The goal is to provide a means of evaluating both monolithic and segmented mirrors to the same level of fidelity and loading conditions at reasonable man-power efforts. The paper will demonstrate most of these new capabilities.

Monolithic optofluidic ring resonator lasers created by femtosecond laser nanofabrication.

PubMed

Chandrahalim, Hengky; Chen, Qiushu; Said, Ali A; Dugan, Mark; Fan, Xudong

2015-05-21

We designed, fabricated, and characterized a monolithically integrated optofluidic ring resonator laser that is mechanically, thermally, and chemically robust. The entire device, including the ring resonator channel and sample delivery microfluidics, was created in a block of fused-silica glass using a 3-dimensional femtosecond laser writing process. The gain medium, composed of Rhodamine 6G (R6G) dissolved in quinoline, was flowed through the ring resonator. Lasing was achieved at a pump threshold of approximately 15 μJ mm(-2). Detailed analysis shows that the Q-factor of the optofluidic ring resonator is 3.3 × 10(4), which is limited by both solvent absorption and scattering loss. In particular, a Q-factor resulting from the scattering loss can be as high as 4.2 × 10(4), suggesting the feasibility of using a femtosecond laser to create high quality optical cavities.

Photonic integrated circuits based on novel glass waveguides and devices

NASA Astrophysics Data System (ADS)

Zhang, Yaping; Zhang, Deng; Pan, Weijian; Rowe, Helen; Benson, Trevor; Loni, Armando; Sewell, Phillip; Furniss, David; Seddon, Angela B.

2006-04-01

Novel materials, micro-, nano-scale photonic devices, and 'photonic systems on a chip' have become important focuses for global photonics research and development. This interest is driven by the rapidly growing demand for broader bandwidth in optical communication networks, and higher connection density in the interconnection area, as well as a wider range of application areas in, for example, health care, environment monitoring and security. Taken together, chalcogenide, heavy metal fluoride and fluorotellurite glasses offer transmission from ultraviolet to mid-infrared, high optical non-linearity and the ability to include active dopants, offering the potential for developing optical components with a wide range of functionality. Moreover, using single-mode large cross-section glass-based waveguides as an optical integration platform is an elegant solution for the monolithic integration of optical components, in which the glass-based structures act both as waveguides and as an optical bench for integration. We have previously developed a array of techniques for making photonic integrated circuits and devices based on novel glasses. One is fibre-on-glass (FOG), in which the fibres can be doped with different active dopants and pressed onto a glass substrate with a different composition using low-temperature thermal bonding under mechanical compression. Another is hot-embossing, in which a silicon mould is placed on top of a glass sample, and hot-embossing is carried out by applying heat and pressure. In this paper the development of a fabrication technique that combines the FOG and hot-embossing procedures to good advantage is described. Simulation and experimental results are presented.

MUSE optical alignment procedure

NASA Astrophysics Data System (ADS)

Laurent, Florence; Renault, Edgard; Loupias, Magali; Kosmalski, Johan; Anwand, Heiko; Bacon, Roland; Boudon, Didier; Caillier, Patrick; Daguisé, Eric; Dubois, Jean-Pierre; Dupuy, Christophe; Kelz, Andreas; Lizon, Jean-Louis; Nicklas, Harald; Parès, Laurent; Remillieux, Alban; Seifert, Walter; Valentin, Hervé; Xu, Wenli

2012-09-01

MUSE (Multi Unit Spectroscopic Explorer) is a second generation VLT integral field spectrograph (1x1arcmin² Field of View) developed for the European Southern Observatory (ESO), operating in the visible wavelength range (0.465-0.93 μm). A consortium of seven institutes is currently assembling and testing MUSE in the Integration Hall of the Observatoire de Lyon for the Preliminary Acceptance in Europe, scheduled for 2013. MUSE is composed of several subsystems which are under the responsibility of each institute. The Fore Optics derotates and anamorphoses the image at the focal plane. A Splitting and Relay Optics feed the 24 identical Integral Field Units (IFU), that are mounted within a large monolithic instrument mechanical structure. Each IFU incorporates an image slicer, a fully refractive spectrograph with VPH-grating and a detector system connected to a global vacuum and cryogenic system. During 2011, all MUSE subsystems were integrated, aligned and tested independently in each institute. After validations, the systems were shipped to the P.I. institute at Lyon and were assembled in the Integration Hall This paper describes the end-to-end optical alignment procedure of the MUSE instrument. The design strategy, mixing an optical alignment by manufacturing (plug and play approach) and few adjustments on key components, is presented. We depict the alignment method for identifying the optical axis using several references located in pupil and image planes. All tools required to perform the global alignment between each subsystem are described. The success of this alignment approach is demonstrated by the good results for the MUSE image quality. MUSE commissioning at the VLT (Very Large Telescope) is planned for 2013.

A Self-Synchronized Optoelectronic Oscillator based on an RTD Photo-Detector and a Laser Diode

PubMed Central

Romeira, Bruno; Seunarine, Kris; Ironside, Charles N.; Kelly, Anthony E.; Figueiredo, José M. L.

2013-01-01

We propose and demonstrate a simple and stable low-phase noise optoelectronic oscillator (OEO) that uses a laser diode, an optical fiber delay line and a resonant tunneling diode (RTD) free-running oscillator that is monolithic integrated with a waveguide photo-detector. The RTD-OEO exhibits single-side band phase noise power below −100 dBc/Hz with more than 30 dB noise suppression at 10 kHz from the center free-running frequency for fiber loop lengths around 1.2 km. The oscillator power consumption is below 0.55 W, and can be controlled either by the injected optical power or the fiber delay line. The RTD-OEO stability is achieved without using other high-speed optical/optoelectronic components and amplification. PMID:23814452

Package Holds Five Monolithic Microwave Integrated Circuits

NASA Technical Reports Server (NTRS)

Mysoor, Narayan R.; Decker, D. Richard; Olson, Hilding M.

1996-01-01

Packages protect and hold monolithic microwave integrated circuit (MMIC) chips while providing dc and radio-frequency (RF) electrical connections for chips undergoing development. Required to be compact, lightweight, and rugged. Designed to minimize undesired resonances, reflections, losses, and impedance mismatches.

Aperture scaling effects with monolithic periodically poled lithium niobate optical parametric oscillators and generators.

PubMed

Missey, M; Dominic, V; Powers, P; Schepler, K L

2000-02-15

We used elliptical beams to demonstrate aperture scaling effects in nanosecond single-grating and multigrating periodically poled lithium niobate (PPLN) monolithic optical parametric oscillators and generators. Increasing the cavity Fresnel number in single-grating crystals broadened both the beam divergence and the spectral bandwidth. Both effects are explained in terms of the phase-matching geometry. These effects are suppressed when a multigrating PPLN crystal is used because the individual gratings provide small effective subapertures. A flood-pumped multigrating optical parametric generator displayed a low output beam divergence and contained 19 pairs of signal and idler frequencies.

All-semiconductor high-speed akinetic swept-source for OCT

NASA Astrophysics Data System (ADS)

Minneman, Michael P.; Ensher, Jason; Crawford, Michael; Derickson, Dennis

2011-12-01

A novel swept-wavelength laser for optical coherence tomography (OCT) using a monolithic semiconductor device with no moving parts is presented. The laser is a Vernier-Tuned Distributed Bragg Reflector (VT-DBR) structure exhibiting a single longitudinal mode. All-electronic wavelength tuning is achieved at a 200 kHz sweep repetition rate, 20 mW output power, over 100 nm sweep width and coherence length longer than 40 mm. OCT point-spread functions with 45- 55 dB dynamic range are demonstrated; lasers at 1550 nm, and now 1310 nm, have been developed. Because the laser's long-term tuning stability allows for electronic sample trigger generation at equal k-space intervals (electronic k-clock), the laser does not need an external optical k-clock for measurement interferometer sampling. The non-resonant, allelectronic tuning allows for continuously adjustable sweep repetition rates from mHz to 100s of kHz. Repetition rate duty cycles are continuously adjustable from single-trigger sweeps to over 99% duty cycle. The source includes a monolithically integrated power leveling feature allowing flat or Gaussian power vs. wavelength profiles. Laser fabrication is based on reliable semiconductor wafer-scale processes, leading to low and rapidly decreasing cost of manufacture.

Ultrafast dynamics and stabilization in chip-scale optical frequency combs (Conference Presentation)

NASA Astrophysics Data System (ADS)

Huang, Shu Wei

2017-02-01

Optical frequency comb technology has been the cornerstone for scientific breakthroughs such as precision frequency metrology, re-definition of time, extreme light-matter interaction, and attosecond sciences. Recently emerged Kerr-active microresonators are promising alternatives to the current benchmark femtosecond laser platform. These chip-scale frequency combs, or Kerr combs, are unique in their compact footprints and offer the potential for monolithic electronic and feedback integration, thereby expanding the already remarkable applications of optical frequency combs. In this talk, I will first report the generation and characterization of low-phase-noise Kerr frequency combs. Measurements of the Kerr comb ultrafast dynamics and phase noise will be presented and discussed. Then I will describe novel strategies to fully stabilize Kerr comb line frequencies towards chip-scale optical frequency synthesizers with a relative uncertainty better than 2.7×10-16. I will show that the unique generation physics of Kerr frequency comb can provide an intrinsic self-referenced access to the Kerr comb line frequencies. The strategy improves the optical frequency stability by more than two orders of magnitude, while preserving the Kerr comb's key advantage of low SWaP and potential for chip-scale electronic and photonic integration.

Integration of quantum cascade lasers and passive waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Montoya, Juan, E-mail: juan.montoya@ll.mit.edu; Wang, Christine; Goyal, Anish

2015-07-20

We report on monolithic integration of active quantum cascade laser (QCL) materials with passive waveguides formed by using proton implantation. Proton implantation reduces the electron concentration in the QCL layers by creating deep levels that trap carriers. This strongly reduces the intersubband absorption and the free-carrier absorption in the gain region and surrounding layers, thus significantly reducing optical loss. We have measured loss as low as α = 0.33 cm{sup −1} in λ = 9.6 μm wavelength proton-implanted QCL material. We have also demonstrated lasing in active-passive integrated waveguides. This simple integration technique is anticipated to enable low-cost fabrication in infrared photonic integrated circuits in themore » mid-infrared (λ ∼ 3–16 μm)« less

Tunable mechanical monolithic sensor with interferometric readout for low frequency seismic noise measurement

NASA Astrophysics Data System (ADS)

Acernese, F.; De Rosa, R.; Giordano, G.; Romano, R.; Barone, F.

2008-03-01

This paper describes a mechanical monolithic sensor for geophysical applications developed at the University of Salerno. The instrument is basically a monolithic tunable folded pendulum, shaped with precision machining and electric-discharge-machining, that can be used both as seismometer and, in a force-feedback configuration, as accelerometer. The monolithic mechanical design and the introduction of laser interferometric techniques for the readout implementation make it a very compact instrument, very sensitive in the low-frequency seismic noise band, with a very good immunity to environmental noises. Many changes have been produced since last version (2007), mainly aimed to the improvement of the mechanics and of the optical readout of the instrument. In fact, we have developed and tested a prototype with elliptical hinges and mechanical tuning of the resonance frequency together with a laser optical lever and a new laser interferometer readout system. The theoretical sensitivity curve both for both laser optical lever and laser interferometric readouts, evaluated on the basis of suitable theoretical models, shows a very good agreement with the experimental measurements. Very interesting scientific result, for example, is that the measured natural resonance frequency of the instrument is 70 mHz with a Q = 140 in air without thermal stabilization, demonstrating the feasibility of a monolithic FP sensor with a natural resonance frequency of the order of mHz with a more refined mechanical tuning. Results on the readout system based on polarimetric homodyne Michelson interferometer is discussed.

Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit.

PubMed

Slivken, Steven; Wu, Donghai; Razeghi, Manijeh

2017-08-16

The mid-infrared (2.5 < λ < 25 μm) spectral region is utilized for many purposes, such as chemical/biological sensing, free space communications, and illuminators/countermeasures. Compared to near-infrared optical systems, however, mid-infrared component technology is still rather crude, with isolated components exhibiting limited functionality. In this manuscript, we make a significant leap forward in mid-infrared technology by developing a platform which can combine functions of multiple mid-infrared optical elements, including an integrated light source. In a single device, we demonstrate wide wavelength tuning (240 nm) and beam steering (17.9 degrees) in the mid-infrared with a significantly reduced beam divergence (down to 0.5 degrees). The architecture is also set up to be manufacturable and testable on a wafer scale, requiring no cleaved facets or special mirror coating to function.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, Young Joon; Lee, Chul -Ho; Yoo, Jinkyoung

Integration of nanostructure lighting source arrays with well-defined emission wavelengths is of great importance for optoelectronic integrated monolithic circuitry. We report on the fabrication and optical properties of GaN-based p–n junction multishell nanotube microarrays with composition-modulated nonpolar m-plane In xGa 1–xN/GaN multiple quantum wells (MQWs) integrated on c-sapphire or Si substrates. The emission wavelengths were controlled in the visible spectral range of green to violet by varying the indium mole fraction of the In xGa 1–xN MQWs in the range 0.13 ≤ x ≤ 0.36. Homogeneous emission from the entire area of the nanotube LED arrays was achieved via themore » formation of MQWs with uniform QW widths and composition by heteroepitaxy on the well-ordered nanotube arrays. Importantly, the wavelength-invariant electroluminescence emission was observed above a turn-on of 3.0 V because both the quantum-confinement Stark effect and band filling were suppressed due to the lack of spontaneous inherent electric field in the m-plane nanotube nonpolar MQWs. Lastly, the method of fabricating the multishell nanotube LED microarrays with controlled emission colors has potential applications in monolithic nonpolar photonic and optoelectronic devices on commonly used c-sapphire and Si substrates.« less

Active optics as enabling technology for future large missions: current developments for astronomy and Earth observation at ESA

NASA Astrophysics Data System (ADS)

Hallibert, Pascal

2017-09-01

In recent years, a trend for higher resolution has increased the entrance apertures of future optical payloads for both Astronomy and Earth Observation most demanding applications, resulting in new opto-mechanical challenges for future systems based on either monolithic or segmented large primary mirrors. Whether easing feasibility and schedule impact of tight manufacturing and integration constraints or correcting mission-critical in-orbit and commissioning effects, Active Optics constitutes an enabling technology for future large optical space instruments at ESA and needs to reach the necessary maturity in time for future mission selection and implementation. We present here a complete updated overview of our current R and D activities in this field, ranging from deformable space-compatible components to full correction chains including wavefront sensing as well as control and correction algorithms. We share as well our perspectives on the way-forward to technological maturity and implementation within future missions.

Brownian thermal noise in functional optical surfaces

NASA Astrophysics Data System (ADS)

Kroker, S.; Dickmann, J.; Rojas Hurtado, C. B.; Heinert, D.; Nawrodt, R.; Levin, Y.; Vyatchanin, S. P.

2017-07-01

We present a formalism to compute Brownian thermal noise in functional optical surfaces such as grating reflectors, photonic crystal slabs, or complex metamaterials. Such computations are based on a specific readout variable, typically a surface integral of a dielectric interface displacement weighed by a form factor. This paper shows how to relate this form factor to Maxwell's stress tensor computed on all interfaces of the moving surface. As an example, we examine Brownian thermal noise in monolithic T-shaped grating reflectors. The previous computations by Heinert et al. [Phys. Rev. D 88, 042001 (2013), 10.1103/PhysRevD.88.042001] utilizing a simplified readout form factor produced estimates of thermal noise that are tens of percent higher than those of the exact analysis in the present paper. The relation between the form factor and Maxwell's stress tensor implies a close correlation between the optical properties of functional optical surfaces and thermal noise.

Demonstration of the feasibility of large-port-count optical switching using a hybrid Mach-Zehnder interferometer-semiconductor optical amplifier switch module in a recirculating loop.

PubMed

Cheng, Q; Wonfor, A; Wei, J L; Penty, R V; White, I H

2014-09-15

For what we believe is the first time, the feasibility of large-port-count nanosecond-reconfiguration-time optical switches is demonstrated using a hybrid approach, where Mach-Zehnder interferometric (MZI) switches provide low-loss, high-speed routing with short semiconductor optical amplifiers (SOAs) being integrated to enhance extinction. By repeatedly passing signals through a monolithic hybrid dilated 2×2 switch module in a recirculating loop, the potential performance of high-port-count switches using the hybrid approach is demonstrated. Experimentally, a single pass switch penalty of only 0.1 dB is demonstrated for the 2×2 module, while even after seven passes through the switch, equivalent to a 128×128 router, a penalty of only 2.4 dB is recorded at a data rate of 10 Gb/s.

Recent progress in low-temperature-process monolithic three dimension technology

NASA Astrophysics Data System (ADS)

Yang, Chih-Chao; Hsieh, Tung-Ying; Huang, Wen-Hsien; Shen, Chang-Hong; Shieh, Jia-Min; Yeh, Wen-Kuan; Wu, Meng-Chyi

2018-04-01

Monolithic three-dimension (3D) integration is an ultimate alternative method of fabricating high density, high performance, and multi-functional integrated circuits. It offers the promise of being a new approach to increase system performance. How to manage the thermal impact of multi-tiered processes, such as dopant activation, source/drain silicidation, and channel formation, and to prevent the degradation of pre-existing devices/circuits become key challenges. In this paper, we provide updates on several important monolithic 3D works, particularly in sequentially stackable channels, and our recent achievements in monolithic 3D integrated circuit (3D-IC). These results indicate that the advanced 3D architecture with novel design tools enables ultrahigh-density stackable circuits to have superior performance and low power consumption for future artificial intelligence (AI) and internet of things (IoTs) application.

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

NASA Astrophysics Data System (ADS)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid-infrared laser sources for integrated photonics.

Carbon-Based Honeycomb Monoliths for Environmental Gas-Phase Applications

PubMed Central

Moreno-Castilla, Carlos; Pérez-Cadenas, Agustín F.

2010-01-01

Honeycomb monoliths consist of a large number of parallel channels that provide high contact efficiencies between the monolith and gas flow streams. These structures are used as adsorbents or supports for catalysts when large gas volumes are treated, because they offer very low pressure drop, short diffusion lengths and no obstruction by particulate matter. Carbon-based honeycomb monoliths can be integral or carbon-coated ceramic monoliths, and they take advantage of the versatility of the surface area, pore texture and surface chemistry of carbon materials. Here, we review the preparation methods of these monoliths, their characteristics and environmental applications.

Nano-array integrated monolithic devices: toward rational materials design and multi-functional performance by scalable nanostructures assembly

DOE PAGES

Wang, Sibo; Ren, Zheng; Guo, Yanbing; ...

2016-03-21

We report the scalable three-dimensional (3-D) integration of functional nanostructures into applicable platforms represents a promising technology to meet the ever-increasing demands of fabricating high performance devices featuring cost-effectiveness, structural sophistication and multi-functional enabling. Such an integration process generally involves a diverse array of nanostructural entities (nano-entities) consisting of dissimilar nanoscale building blocks such as nanoparticles, nanowires, and nanofilms made of metals, ceramics, or polymers. Various synthetic strategies and integration methods have enabled the successful assembly of both structurally and functionally tailored nano-arrays into a unique class of monolithic devices. The performance of nano-array based monolithic devices is dictated bymore » a few important factors such as materials substrate selection, nanostructure composition and nano-architecture geometry. Therefore, the rational material selection and nano-entity manipulation during the nano-array integration process, aiming to exploit the advantageous characteristics of nanostructures and their ensembles, are critical steps towards bridging the design of nanostructure integrated monolithic devices with various practical applications. In this article, we highlight the latest research progress of the two-dimensional (2-D) and 3-D metal and metal oxide based nanostructural integrations into prototype devices applicable with ultrahigh efficiency, good robustness and improved functionality. Lastly, selective examples of nano-array integration, scalable nanomanufacturing and representative monolithic devices such as catalytic converters, sensors and batteries will be utilized as the connecting dots to display a roadmap from hierarchical nanostructural assembly to practical nanotechnology implications ranging from energy, environmental, to chemical and biotechnology areas.« less

Nano-array integrated monolithic devices: toward rational materials design and multi-functional performance by scalable nanostructures assembly

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Sibo; Ren, Zheng; Guo, Yanbing

We report the scalable three-dimensional (3-D) integration of functional nanostructures into applicable platforms represents a promising technology to meet the ever-increasing demands of fabricating high performance devices featuring cost-effectiveness, structural sophistication and multi-functional enabling. Such an integration process generally involves a diverse array of nanostructural entities (nano-entities) consisting of dissimilar nanoscale building blocks such as nanoparticles, nanowires, and nanofilms made of metals, ceramics, or polymers. Various synthetic strategies and integration methods have enabled the successful assembly of both structurally and functionally tailored nano-arrays into a unique class of monolithic devices. The performance of nano-array based monolithic devices is dictated bymore » a few important factors such as materials substrate selection, nanostructure composition and nano-architecture geometry. Therefore, the rational material selection and nano-entity manipulation during the nano-array integration process, aiming to exploit the advantageous characteristics of nanostructures and their ensembles, are critical steps towards bridging the design of nanostructure integrated monolithic devices with various practical applications. In this article, we highlight the latest research progress of the two-dimensional (2-D) and 3-D metal and metal oxide based nanostructural integrations into prototype devices applicable with ultrahigh efficiency, good robustness and improved functionality. Lastly, selective examples of nano-array integration, scalable nanomanufacturing and representative monolithic devices such as catalytic converters, sensors and batteries will be utilized as the connecting dots to display a roadmap from hierarchical nanostructural assembly to practical nanotechnology implications ranging from energy, environmental, to chemical and biotechnology areas.« less

In vivo optical modulation of neural signals using monolithically integrated two-dimensional neural probe arrays

PubMed Central

Son, Yoojin; Jenny Lee, Hyunjoo; Kim, Jeongyeon; Shin, Hyogeun; Choi, Nakwon; Justin Lee, C.; Yoon, Eui-Sung; Yoon, Euisik; Wise, Kensall D.; Geun Kim, Tae; Cho, Il-Joo

2015-01-01

Integration of stimulation modalities (e.g. electrical, optical, and chemical) on a large array of neural probes can enable an investigation of important underlying mechanisms of brain disorders that is not possible through neural recordings alone. Furthermore, it is important to achieve this integration of multiple functionalities in a compact structure to utilize a large number of the mouse models. Here we present a successful optical modulation of in vivo neural signals of a transgenic mouse through our compact 2D MEMS neural array (optrodes). Using a novel fabrication method that embeds a lower cladding layer in a silicon substrate, we achieved a thin silicon 2D optrode array that is capable of delivering light to multiple sites using SU-8 as a waveguide core. Without additional modification to the microelectrodes, the measured impedance of the multiple microelectrodes was below 1 MΩ at 1 kHz. In addition, with a low background noise level (±25 μV), neural spikes from different individual neurons were recorded on each microelectrode. Lastly, we successfully used our optrodes to modulate the neural activity of a transgenic mouse through optical stimulation. These results demonstrate the functionality of the 2D optrode array and its potential as a next-generation tool for optogenetic applications. PMID:26494437

Thin-film optical pass band filters based on new photo-lithographic process for CaSSIS FPA detector on Exomars TGO mission: development, integration, and test

NASA Astrophysics Data System (ADS)

Gambicorti, L.; Piazza, D.; Gerber, M.; Pommerol, A.; Roloff, V.; Ziethe, R.; Zimmermann, C.; Da Deppo, V.; Cremonese, G.; Ficai Veltroni, I.; Marinai, M.; Di Carmine, E.; Bauer, T.; Moebius, P.; Thomas, N.

2016-08-01

A new technique based on photolithographic processes of thin-film optical pass band coatings on a monolithic substrate has been applied to the filters of the Focal Plane Assembly (FPA) of the Colour and Stereo Surface Imaging System (CaSSIS) that will fly onboard of the ExoMars Trace Gas Orbiter to be launched in March 2016 by ESA. The FPA including is one of the spare components of the Simbio-Sys instrument of the Italian Space Agency (ASI) that will fly on ESA's Bepi Colombo mission to Mercury. The detector, developed by Raytheon Vision Systems, is a 2kx2k hybrid Si-PIN array with a 10 μm pixel. The detector is housed within a block and has filters deposited directly on the entrance window. The window is a 1 mm thick monolithic plate of fused silica. The Filter Strip Assembly (FSA) is produced by Optics Balzers Jena GmbH and integrated on the focal plane by Leonardo-Finmeccanica SpA (under TAS-I responsibility). It is based on dielectric multilayer interference coatings, 4 colour bands selected with average in-band transmission greater than 95 percent within wavelength range (400-1100 nm), giving multispectral images on the same detector and thus allows CaSSIS to operate in push-frame mode. The Field of View (FOV) of each colour band on the detector is surrounded by a mask of low reflective chromium (LRC), which also provides with the straylight suppression required (an out-of-band transmission of less than 10-5/nm). The mask has been shown to deal effectively with cross-talk from multiple reflections between the detector surface and the filter. This paper shows the manufacturing and optical properties of the FSA filters and the FPA preliminary on-ground calibration results.

Quantum dash based single section mode locked lasers for photonic integrated circuits.

PubMed

Joshi, Siddharth; Calò, Cosimo; Chimot, Nicolas; Radziunas, Mindaugas; Arkhipov, Rostislav; Barbet, Sophie; Accard, Alain; Ramdane, Abderrahim; Lelarge, Francois

2014-05-05

We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators. We also investigate the relations between cavity modes in such a device and demonstrate how the dispersion of the complex mode frequencies induced by the Bragg grating implies a violation of the equi-distance between the adjacent mode frequencies and, therefore, forbids the locking of the modes in a classical Bragg Device. Finally we integrate such a Bragg Mirror based laser with Semiconductor Optical Amplifier (SOA) to demonstrate the monolithic integration of QDash based low phase noise sources in PICs.

An integration machine for the assembly of the x-ray optic units based on thin slumped glass foils for the IXO mission

NASA Astrophysics Data System (ADS)

Civitani, M. M.; Basso, S.; Bavdaz, M.; Citterio, O.; Conconi, P.; Gallieni, D.; Ghigo, M.; Martelli, F.; Pareschi, G.; Parodi, G.; Proserpio, L.; Sironi, G.; Spiga, D.; Tagliaferri, G.; Tintori, M.; Wille, E.; Zambra, A.

2011-09-01

The International X-ray Observatory (IXO) is a joint mission concept studied by the ESA, NASA, and JAXA space agencies. The main goal of the mission design is to achieve a large effective area (>2.5m2 at 1 keV) and a good angular resolution (5 arcsec HEW at 1 keV) at the same time. The Brera Astronomical Observatory - INAF, Italy), under the support of ESA, is developing a method for the realization of the X-Ray Optical Units, based on the use of slumped thin glass segments to form densely packed modules in a Wolter type I optical configuration. In order to reach the very challenging integration requirements, it has been developed an innovative assembly approach for aligning and mounting the IXO mirror segments. The method is based on the use of an integration mould for each foil. In particular the glass segment is forced to adhere to the integration mould in order to maintain the optimal figure without deformations until the integration of the foil in the stack is completed. In this way an active correction for major existing figure errors after slumping is also achieved. Moreover reinforcing ribs are used in order to connect the facets to each-other and to realize a robust monolithic stack of plates. In this paper we present the design, the development and the validation status of a special Integration Machine (IMA) that has been specifically developed to allow the integration of the Plate Pairs into prototypal X-Ray Optical Unit stacks.

Long-lived monolithic micro-optics for multispectral GRIN applications.

PubMed

Lepicard, Antoine; Bondu, Flavie; Kang, Myungkoo; Sisken, Laura; Yadav, Anupama; Adamietz, Frederic; Rodriguez, Vincent; Richardson, Kathleen; Dussauze, Marc

2018-05-09

The potential for realizing robust, monolithic, near-surface refractive micro-optic elements with long-lived stability is demonstrated in visible and infrared transmitting glasses capable of use in dual band applications. Employing an enhanced understanding of glass chemistry and geometric control of mobile ion migration made possible with electrode patterning, flat, permanent, thermally-poled micro-optic structures have been produced and characterized. Sub-surface (t~5-10 µm) compositional and structural modification during the poling process results in formation of spatially-varying refractive index profiles, exhibiting induced Δn changes up to 5 × 10 -2 which remain stable for >15 months. The universality of this approach applied to monolithic vis-near infrared [NIR] oxide and NIR-midwave infrared [MIR] chalcogenide glass materials is demonstrated for the first time. Element size, shape and gradient profile variation possible through pattern design and fabrication is shown to enable a variety of design options not possible using other GRIN process methodologies.

Direct mapping of local redox current density on a monolith electrode by laser scanning.

PubMed

Lee, Seung-Woo; Lopez, Jeffrey; Saraf, Ravi F

2013-09-15

An optical method of mapping local redox reaction over a monolith electrode using simple laser scanning is described. As the optical signal is linearly proportional to the maximum redox current that is measured concomitantly by voltammetry, the optical signal quantitatively maps the local redox current density distribution. The method is demonstrated on two types of reactions: (1) a reversible reaction where the redox moieties are ionic, and (2) an irreversible reaction on two different types of enzymes immobilized on the electrode where the reaction moieties are nonionic. To demonstrate the scanning capability, the local redox behavior on a "V-shaped" electrode is studied where the local length scale and, hence, the local current density, is nonuniform. The ability to measure the current density distribution by this method will pave the way for multianalyte analysis on a monolith electrode using a standard three-electrode configuration. The method is called Scanning Electrometer for Electrical Double-layer (SEED). Copyright © 2013 Elsevier B.V. All rights reserved.

Synthesis and applications of crack-free SiO2 monolith containing CdSe/ZnS quantum dots as passive lighting sources.

PubMed

Yi, Dong Kee

2008-09-01

A reverse microemulsion technique has been used to synthesize quantum dot nanocomposites within a SiO2 surface coating. With this approach, the unique optical properties of the CdSe/ZnS quantum dots were preserved. CdSe/ZnS/SiO2 nanoparticles were homogeneously distributed in a tetramethyl orthosilicate ethanol solution and gelation process was initiated within a 10 min, and was left over night at room temperature and dried fully to achieve a solid SiO, monolith. The resulting monolith was transparent and fluorescent under ultraviolet (UV) lamp. Moreover the monolith produced was crack-free. Further studies on the photo stability of the monolith were performed using a high power UV LED device. Remarkably, quantum dots in the SiO, monolith showed better photo stability compared with those dispersed in a polymer matrix.

All-optical XOR logic gate using intersubband transition in III-V quantum well materials.

PubMed

Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo

2014-06-02

A monolithically integrated all-optical exclusive-OR (XOR) logic gate is experimentally demonstrated based on a Michelson interferometer (MI) gating device in InGaAs/AlAsSb coupled double quantum wells (CDQWs). The MI arms can convert the pump data with return-to-zero ON-OFF keying (RZ OOK) to binary phase-shift keying (BPSK) format, then two BPSK signals can interfere with each other for realizing a desired logical operation. All-optical format conversion from the RZ OOK to BPSK is based on the cross-phase modulation to the transverse electric (TE) probe wave, which is caused by the intersubband transition excited by the transverse magnetic (TM) pump light. Bit error rate measurements show that error free operation for both BPSK format conversion and XOR logical operation can be achieved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vaisman, Michelle; Fan, Shizhao; Nay Yaung, Kevin

As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. Furthermore, we present a separate Si bottom cell with a 1.7more » eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we also compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.« less

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors.

PubMed

Malinowski, Pawel E; Georgitzikis, Epimitheas; Maes, Jorick; Vamvaka, Ioanna; Frazzica, Fortunato; Van Olmen, Jan; De Moor, Piet; Heremans, Paul; Hens, Zeger; Cheyns, David

2017-12-10

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III-V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10 -6 A/cm² at -2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors.

High strength fused silica flexures manufactured by femtosecond laser

NASA Astrophysics Data System (ADS)

Bellouard, Yves; Said, Ali A.; Dugan, Mark; Bado, Philippe

2009-02-01

Flexures are mechanical elements used in micro- and precision-engineering to precisely guide the motion of micro-parts. They consist of slender bodies that deform elastically upon the application of a force. Although counter-intuitive at first, fused silica is an attractive material for flexure. Pending that the machining process does not introduce surface flaws that would lead to catastrophic failure, the material has a theoretically high ultimate tensile strength of several GPa. We report on high-aspect ratio fused silica flexures manufactured by femtosecond laser combined with chemical etching. Notch-hinges with thickness as small as twenty microns and aspect ratios comparable to aspect ratios obtained by Deep- Reactive-Ion-Etching (DRIE) were fabricated and tested under different loading conditions. Multiple fracture tests were performed for various loading conditions and the cracks morphologies were analyzed using Scanning Electron Microscopy. The manufactured elements show outstanding mechanical properties with flexural strengths largely exceeding those obtained with other technologies and materials. Fused silica flexures offer a mean to combine integrated optics with micro-mechanics in a single monolithic substrate. Waveguides and mechanical elements can be combined in a monolithic devices opening new opportunities for integrated opto-mechatronics devices.

InP femtosecond mode-locked laser in a compound feedback cavity with a switchable repetition rate

NASA Astrophysics Data System (ADS)

Lo, Mu-Chieh; Guzmán, Robinson; Carpintero, Guillermo

2018-02-01

A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities are coupled by using on-chip reflectors at both ends, enabling harmonic mode locking. By changing DC-bias conditions, optical mode spacing from 50 to 450 GHz is experimentally demonstrated. Ultrafast pulses shorter than 0.3 ps emitted from this laser diode are shown in autocorrelation traces.

Coherent infrared imaging camera (CIRIC)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hutchinson, D.P.; Simpson, M.L.; Bennett, C.A.

1995-07-01

New developments in 2-D, wide-bandwidth HgCdTe (MCT) and GaAs quantum-well infrared photodetectors (QWIP) coupled with Monolithic Microwave Integrated Circuit (MMIC) technology are now making focal plane array coherent infrared (IR) cameras viable. Unlike conventional IR cameras which provide only thermal data about a scene or target, a coherent camera based on optical heterodyne interferometry will also provide spectral and range information. Each pixel of the camera, consisting of a single photo-sensitive heterodyne mixer followed by an intermediate frequency amplifier and illuminated by a separate local oscillator beam, constitutes a complete optical heterodyne receiver. Applications of coherent IR cameras are numerousmore » and include target surveillance, range detection, chemical plume evolution, monitoring stack plume emissions, and wind shear detection.« less

Metasurface polarization splitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slovick, Brian A.; Zhou, You; Yu, Zhi Gang

Polarization beam splitters, devices that separate the two orthogonal polarizations of light into different propagation directions, are among the most ubiquitous optical elements. However, traditionally polarization splitters rely on bulky optical materials, while emerging optoelectronic and photonic circuits require compact, chip-scale polarization splitters. Here, we show that a rectangular lattice of cylindrical silicon Mie resonators functions as a polarization splitter, efficiently reflecting one polarization while transmitting the other. We show that the polarization splitting arises from the anisotropic permittivity and permeability of the metasurface due to the twofold rotational symmetry of the rectangular unit cell. Lastly, the high polarization efficiency,more » low loss and low profile make these metasurface polarization splitters ideally suited for monolithic integration with optoelectronic and photonic circuits.« less

Metasurface polarization splitter

DOE PAGES

Slovick, Brian A.; Zhou, You; Yu, Zhi Gang; ...

2017-02-20

Polarization beam splitters, devices that separate the two orthogonal polarizations of light into different propagation directions, are among the most ubiquitous optical elements. However, traditionally polarization splitters rely on bulky optical materials, while emerging optoelectronic and photonic circuits require compact, chip-scale polarization splitters. Here, we show that a rectangular lattice of cylindrical silicon Mie resonators functions as a polarization splitter, efficiently reflecting one polarization while transmitting the other. We show that the polarization splitting arises from the anisotropic permittivity and permeability of the metasurface due to the twofold rotational symmetry of the rectangular unit cell. Lastly, the high polarization efficiency,more » low loss and low profile make these metasurface polarization splitters ideally suited for monolithic integration with optoelectronic and photonic circuits.« less

Development and characterization of monolithic multilayer Laue lens nanofocusing optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nazaretski, E.; Xu, W.; Bouet, N.

2016-06-27

We have developed an experimental approach to bond two independent linear Multilayer Laue Lenses (MLLs) together. A monolithic MLL structure was characterized using ptychography at 12 keV photon energy, and we demonstrated 12 nm and 24 nm focusing in horizontal and vertical directions, respectively. Fabrication of 2D MLL optics allows installation of these focusing elements in more conventional microscopes suitable for x-ray imaging using zone plates, and opens easier access to 2D imaging with high spatial resolution in the hard x-ray regime.

Development and characterization of monolithic multilayer Laue lens nanofocusing optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nazaretski, E.; Xu, W., E-mail: weihexu@bnl.gov; Bouet, N.

2016-06-27

We have developed an experimental approach to bond two independent linear Multilayer Laue Lenses (MLLs) together. A monolithic MLL structure was characterized using ptychography at 12 keV photon energy, and we demonstrated 12 nm and 24 nm focusing in horizontal and vertical directions, respectively. Fabrication of 2D MLL optics allows installation of these focusing elements in more conventional microscopes suitable for x-ray imaging using zone plates, and opens easier access to 2D imaging with high spatial resolution in the hard x-ray regime.

Development and characterization of monolithic multilayer Laue lens nanofocusing optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nazaretski, E.; Xu, W.; Bouet, N.

In this study, we have developed an experimental approach to bond two independent linear Multilayer Laue Lenses (MLLs) together. A monolithic MLL structure was characterized using ptychography at 12 keV photon energy, and we demonstrated 12 nm and 24 nm focusing in horizontal and vertical directions, respectively. Fabrication of 2D MLL optics allows installation of these focusing elements in more conventional microscopes suitable for x-ray imaging using zone plates, and opens easier access to 2D imaging with high spatial resolution in the hard x-ray regime.

Development and characterization of monolithic multilayer Laue lens nanofocusing optics

DOE PAGES

Nazaretski, E.; Xu, W.; Bouet, N.; ...

2016-06-27

In this study, we have developed an experimental approach to bond two independent linear Multilayer Laue Lenses (MLLs) together. A monolithic MLL structure was characterized using ptychography at 12 keV photon energy, and we demonstrated 12 nm and 24 nm focusing in horizontal and vertical directions, respectively. Fabrication of 2D MLL optics allows installation of these focusing elements in more conventional microscopes suitable for x-ray imaging using zone plates, and opens easier access to 2D imaging with high spatial resolution in the hard x-ray regime.

Fiberless multicolor neural optoelectrode for in vivo circuit analysis.

PubMed

Kampasi, Komal; Stark, Eran; Seymour, John; Na, Kyounghwan; Winful, Herbert G; Buzsáki, György; Wise, Kensall D; Yoon, Euisik

2016-08-03

Maximizing the potential of optogenetic approaches in deep brain structures of intact animals requires optical manipulation of neurons at high spatial and temporal resolutions, while simultaneously recording electrical data from those neurons. Here, we present the first fiber-less optoelectrode with a monolithically integrated optical waveguide mixer that can deliver multicolor light at a common waveguide port to achieve multicolor modulation of the same neuronal population in vivo. We demonstrate successful device implementation by achieving efficient coupling between a side-emitting injection laser diode (ILD) and a dielectric optical waveguide mixer via a gradient-index (GRIN) lens. The use of GRIN lenses attains several design features, including high optical coupling and thermal isolation between ILDs and waveguides. We validated the packaged devices in the intact brain of anesthetized mice co-expressing Channelrhodopsin-2 and Archaerhodopsin in pyramidal cells in the hippocampal CA1 region, achieving high quality recording, activation and silencing of the exact same neurons in a given local region. This fully-integrated approach demonstrates the spatial precision and scalability needed to enable independent activation and silencing of the same or different groups of neurons in dense brain regions while simultaneously recording from them, thus considerably advancing the capabilities of currently available optogenetic toolsets.

Monolithic Microwave Integrated Circuits Based on GaAs Mesfet Technology

NASA Astrophysics Data System (ADS)

Bahl, Inder J.

Advanced military microwave systems are demanding increased integration, reliability, radiation hardness, compact size and lower cost when produced in large volume, whereas the microwave commercial market, including wireless communications, mandates low cost circuits. Monolithic Microwave Integrated Circuit (MMIC) technology provides an economically viable approach to meeting these needs. In this paper the design considerations for several types of MMICs and their performance status are presented. Multifunction integrated circuits that advance the MMIC technology are described, including integrated microwave/digital functions and a highly integrated transceiver at C-band.

Flow sensor based on monolithic integration of organic light-emitting diodes (OLEDs) and CMOS circuits

NASA Astrophysics Data System (ADS)

Reckziegel, S.; Kreye, D.; Puegner, T.; Vogel, U.; Scholles, M.; Grillberger, C.; Fehse, K.

2009-02-01

In this paper we present an optoelectronic integrated circuit (OEIC) based on monolithic integration of organic lightemitting diodes (OLEDs) and CMOS technology. By the use of integrated circuits, photodetectors and highly efficient OLEDs on the same silicon chip, novel OEICs with combined sensors and actuating elements can be realized. The OLEDs are directly deposited on the CMOS top metal. The metal layer serves as OLED bottom electrode and determines the bright area. Furthermore, the area below the OLED electrodes can be used for integrated circuits. The monolithic integration of actuators, sensors and electronics on a common silicon substrate brings significant advantages in most sensory applications. The developed OEIC combines three different types of sensors: a reflective sensor, a color sensor and a particle flow sensor and is configured with an orange (597nm) emitting p-i-n OLED. We describe the architecture of such a monolithic OEIC and demonstrate a method to determine the velocity of a fluid being conveyed pneumatically in a transparent capillary. The integrated OLEDs illuminate the capillary with the flowing fluid. The fluid has a random reflection profile. Depending on the velocity and a random contrast difference, more or less light is reflected back to the substrate. The integrated photodiodes located at different fixed points detect the reflected light and using crosscorrelation, the velocity is calculated from the time in which contrast differences move over a fixed distance.

Low-temperature crack-free Si3N4 nonlinear photonic circuits for CMOS-compatible optoelectronic co-integration

NASA Astrophysics Data System (ADS)

Casale, Marco; Kerdiles, Sebastien; Brianceau, Pierre; Hugues, Vincent; El Dirani, Houssein; Sciancalepore, Corrado

2017-02-01

In this communication, authors report for the first time on the fabrication and testing of Si3N4 non-linear photonic circuits for CMOS-compatible monolithic co-integration with silicon-based optoelectronics. In particular, a novel process has been developed to fabricate low-loss crack-free Si3N4 750-nm-thick films for Kerr-based nonlinear functions featuring full thermal budget compatibility with existing Silicon photonics and front-end Si optoelectronics. Briefly, differently from previous and state-of-the-art works, our nonlinear nitride-based platform has been realized without resorting to commonly-used high-temperature annealing ( 1200°C) of the film and its silica upper-cladding used to break N-H bonds otherwise causing absorption in the C-band and destroying its nonlinear functionality. Furthermore, no complex and fabrication-intolerant Damascene process - as recently reported earlier this year - aimed at controlling cracks generated in thick tensile-strained Si3N4 films has been used as well. Instead, a tailored Si3N4 multiple-step film deposition in 200-mm LPCVD-based reactor and subsequent low-temperature (400°C) PECVD oxide encapsulation have been used to fabricate the nonlinear micro-resonant circuits aiming at generating optical frequency combs via optical parametric oscillators (OPOs), thus allowing the monolithic co-integration of such nonlinear functions on existing CMOS-compatible optoelectronics, for both active and passive components such as, for instance, silicon modulators and wavelength (de-)multiplexers. Experimental evidence based on wafer-level statistics show nitride-based 112-μm-radius ring resonators using such low-temperature crack-free nitride film exhibiting quality factors exceeding Q >3 x 105, thus paving the way to low-threshold power-efficient Kerr-based comb sources and dissipative temporal solitons in the C-band featuring full thermal processing compatibility with Si photonic integrated circuits (Si-PICs).

Monolithic liquid crystal waveguide Fourier transform spectrometer for gas species sensing

NASA Astrophysics Data System (ADS)

Chao, Tien-Hsin; Lu, Thomas T.; Davis, Scott R.; Rommel, Scott D.; Farca, George; Luey, Ben; Martin, Alan; Anderson, Michael H.

2011-04-01

Jet Propulsion Lab and Vescent Photonics Inc. and are jointly developing an innovative ultracompact (volume < 10 cm3), ultra-low power (<10-3 Watt-hours per measurement and zero power consumption when not measuring), completely non-mechanical Liquid Crystal Waveguide Fourier Transform Spectrometer (LCWFTS) that will be suitable for a variety of remote-platform, in-situ measurements. These devices are made possible by novel electro-evanescent waveguide architecture, enabling "monolithic chip-scale" Electro Optic-FTS (EO-FTS) sensors. The potential performance of these EO-FTS sensors include: i) a spectral range throughout 0.4-5 μm (25000 - 2000 cm-1), ii) high-resolution (Δλ <= 0.1 nm), iii) high-speed (< 1 ms) measurements, and iv) rugged integrated optical construction. This performance potential enables the detection and quantification of a large number of different atmospheric gases simultaneously in the same air mass and the rugged construction will enable deployment on previously inaccessible platforms. The sensor construction is also amenable for analyzing aqueous samples on remote floating or submerged platforms. We will report a proof-of-principle prototype LCWFTS sensor that has been demonstrated in the near-IR (range of 1450-1700 nm) with a 5 nm resolution. This performance is in good agreement with theoretical models, which are being used to design and build the next generation LCWFTS devices.

Monolithic solid-state lasers for spaceflight

NASA Astrophysics Data System (ADS)

Krainak, Michael A.; Yu, Anthony W.; Stephen, Mark A.; Merritt, Scott; Glebov, Leonid; Glebova, Larissa; Ryasnyanskiy, Aleksandr; Smirnov, Vadim; Mu, Xiaodong; Meissner, Stephanie; Meissner, Helmuth

2015-02-01

A new solution for building high power, solid state lasers for space flight is to fabricate the whole laser resonator in a single (monolithic) structure or alternatively to build a contiguous diffusion bonded or welded structure. Monolithic lasers provide numerous advantages for space flight solid-state lasers by minimizing misalignment concerns. The closed cavity is immune to contamination. The number of components is minimized thus increasing reliability. Bragg mirrors serve as the high reflector and output coupler thus minimizing optical coatings and coating damage. The Bragg mirrors also provide spectral and spatial mode selection for high fidelity. The monolithic structure allows short cavities resulting in short pulses. Passive saturable absorber Q-switches provide a soft aperture for spatial mode filtering and improved pointing stability. We will review our recent commercial and in-house developments toward fully monolithic solid-state lasers.

HabEx Optical Telescope Assembly

NASA Technical Reports Server (NTRS)

Stahl, H. Philip

2017-01-01

Purpose: a) Introduce candidate optical telescope assembly (OTA) architectures. b) Illustrate design/analysis process. Agenda: a) Definitions, Specification & Assumptions. b.) 4-meter Monolithic Mirror Concept. c) 6.5-meter Segmented Mirror Concept.

A monolithic and flexible fluoropolymer film microreactor for organic synthesis applications.

PubMed

Kim, Jin-Oh; Kim, Heejin; Ko, Dong-Hyeon; Min, Kyoung-Ik; Im, Do Jin; Park, Soo-Young; Kim, Dong-Pyo

2014-11-07

A photocurable and viscous fluoropolymer with chemical stability is a highly desirable material for fabrication of microchemical devices. Lack of a reliable fabrication method, however, limits actual applications for organic reactions. Herein, we report fabrication of a monolithic and flexible fluoropolymer film microreactor and its use as a new microfluidic platform. The fabrication involves facile soft lithography techniques that enable partial curing of thin laminates, which can be readily bonded by conformal contact without any external forces. We demonstrate fabrication of various functional channels (~300 μm thick) such as those embedded with either a herringbone micromixer pattern or a droplet generator. Organic reactions under strongly acidic and basic conditions can be carried out in this film microreactor even at elevated temperature with excellent reproducibility. In particular, the transparent film microreactor with good deformability could be wrapped around a light-emitting lamp for close contact with the light source for efficient photochemical reactions with visible light, which demonstrates easy integration with optical components for functional miniaturized systems.

Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

NASA Astrophysics Data System (ADS)

Al-Attili, Abdelrahman Z.; Kako, Satoshi; Husain, Muhammad K.; Gardes, Frederic Y.; Arimoto, Hideo; Higashitarumizu, Naoki; Iwamoto, Satoshi; Arakawa, Yasuhiko; Ishikawa, Yasuhiko; Saito, Shinichi

2015-05-01

High electron doping of germanium (Ge) is considered to be an important process to convert Ge into an optical gain material and realize a monolithic light source integrated on a silicon chip. Spin-on doping is a method that offers the potential to achieve high doping concentrations without affecting crystalline qualities over other methods such as ion implantation and in-situ doping during material growth. However, a standard spin-on doping recipe satisfying these requirements is not yet available. In this paper we examine spin-on doping of Ge-on-insulator (GOI) wafers. Several issues were identified during the spin-on doping process and specifically the adhesion between Ge and the oxide, surface oxidation during activation, and the stress created in the layers due to annealing. In order to mitigate these problems, Ge disks were first patterned by dry etching followed by spin-on doping. Even by using this method to reduce the stress, local peeling of Ge could still be identified by optical microscope imaging. Nevertheless, most of the Ge disks remained after the removal of the glass. According to the Raman data, we could not identify broadening of the lineshape which shows a good crystalline quality, while the stress is slightly relaxed. We also determined the linear increase of the photoluminescence intensity by increasing the optical pumping power for the doped sample, which implies a direct population and recombination at the gamma valley.

A monolithic integrated photonic microwave filter

NASA Astrophysics Data System (ADS)

Fandiño, Javier S.; Muñoz, Pascual; Doménech, David; Capmany, José

2017-02-01

Meeting the increasing demand for capacity in wireless networks requires the harnessing of higher regions in the radiofrequency spectrum, reducing cell size, as well as more compact, agile and power-efficient base stations that are capable of smoothly interfacing the radio and fibre segments. Fully functional microwave photonic chips are promising candidates in attempts to meet these goals. In recent years, many integrated microwave photonic chips have been reported in different technologies. To the best of our knowledge, none has monolithically integrated all the main active and passive optoelectronic components. Here, we report the first demonstration of a tunable microwave photonics filter that is monolithically integrated into an indium phosphide chip. The reconfigurable radiofrequency photonic filter includes all the necessary elements (for example, lasers, modulators and photodetectors), and its response can be tuned by means of control electric currents. This is an important step in demonstrating the feasibility of integrated and programmable microwave photonic processors.

Holistic design in high-speed optical interconnects

NASA Astrophysics Data System (ADS)

Saeedi, Saman

Integrated circuit scaling has enabled a huge growth in processing capability, which necessitates a corresponding increase in inter-chip communication bandwidth. As bandwidth requirements for chip-to-chip interconnection scale, deficiencies of electrical channels become more apparent. Optical links present a viable alternative due to their low frequency-dependent loss and higher bandwidth density in the form of wavelength division multiplexing. As integrated photonics and bonding technologies are maturing, commercialization of hybrid-integrated optical links are becoming a reality. Increasing silicon integration leads to better performance in optical links but necessitates a corresponding co-design strategy in both electronics and photonics. In this light, holistic design of high-speed optical links with an in-depth understanding of photonics and state-of-the-art electronics brings their performance to unprecedented levels. This thesis presents developments in high-speed optical links by co-designing and co-integrating the primary elements of an optical link: receiver, transmitter, and clocking. In the first part of this thesis a 3D-integrated CMOS/Silicon-photonic receiver will be presented. The electronic chip features a novel design that employs a low-bandwidth TIA front-end, double-sampling and equalization through dynamic offset modulation. Measured results show -14.9dBm of sensitivity and energy eciency of 170fJ/b at 25Gb/s. The same receiver front-end is also used to implement source-synchronous 4-channel WDM-based parallel optical receiver. Quadrature ILO-based clocking is employed for synchronization and a novel frequency-tracking method that exploits the dynamics of IL in a quadrature ring oscillator to increase the effective locking range. An adaptive body-biasing circuit is designed to maintain the per-bit-energy consumption constant across wide data-rates. The prototype measurements indicate a record-low power consumption of 153fJ/b at 32Gb/s. The receiver sensitivity is measured to be -8.8dBm at 32Gb/s. Next, on the optical transmitter side, three new techniques will be presented. First one is a differential ring modulator that breaks the optical bandwidth/quality factor trade-off known to limit the speed of high-Q ring modulators. This structure maintains a constant energy in the ring to avoid pattern-dependent power droop. As a first proof of concept, a prototype has been fabricated and measured up to 10Gb/s. The second technique is thermal stabilization of micro-ring resonator modulators through direct measurement of temperature using a monolithic PTAT temperature sensor. The measured temperature is used in a feedback loop to adjust the thermal tuner of the ring. A prototype is fabricated and a closed-loop feedback system is demonstrated to operate at 20Gb/s in the presence of temperature fluctuations. The third technique is a switched-capacitor based pre-emphasis technique designed to extend the inherently low bandwidth of carrier injection micro-ring modulators. A measured prototype of the optical transmitter achieves energy efficiency of 342fJ/bit at 10Gb/s and the wavelength stabilization circuit based on the monolithic PTAT sensor consumes 0.29mW. Lastly, a first-order frequency synthesizer that is suitable for high-speed on-chip clock generation will be discussed. The proposed design features an architecture combining an LC quadrature VCO, two sample-and-holds, a PI, digital coarse-tuning, and rotational frequency detection for fine-tuning. In addition to an electrical reference clock, as an extra feature, the prototype chip is capable of receiving a low jitter optical reference clock generated by a high-repetition-rate mode-locked laser. The output clock at 8GHz has an integrated RMS jitter of 490fs, peak-to-peak periodic jitter of 2.06ps, and total RMS jitter of 680fs. The reference spurs are measured to be 64.3dB below the carrier frequency. At 8GHz the system consumes 2.49mW from a 1V supply.

Emission color-tuned light-emitting diode microarrays of nonpolar In xGa 1–xN/GaN multishell nanotube heterostructures

DOE PAGES

Hong, Young Joon; Lee, Chul -Ho; Yoo, Jinkyoung; ...

2015-12-09

Integration of nanostructure lighting source arrays with well-defined emission wavelengths is of great importance for optoelectronic integrated monolithic circuitry. We report on the fabrication and optical properties of GaN-based p–n junction multishell nanotube microarrays with composition-modulated nonpolar m-plane In xGa 1–xN/GaN multiple quantum wells (MQWs) integrated on c-sapphire or Si substrates. The emission wavelengths were controlled in the visible spectral range of green to violet by varying the indium mole fraction of the In xGa 1–xN MQWs in the range 0.13 ≤ x ≤ 0.36. Homogeneous emission from the entire area of the nanotube LED arrays was achieved via themore » formation of MQWs with uniform QW widths and composition by heteroepitaxy on the well-ordered nanotube arrays. Importantly, the wavelength-invariant electroluminescence emission was observed above a turn-on of 3.0 V because both the quantum-confinement Stark effect and band filling were suppressed due to the lack of spontaneous inherent electric field in the m-plane nanotube nonpolar MQWs. Lastly, the method of fabricating the multishell nanotube LED microarrays with controlled emission colors has potential applications in monolithic nonpolar photonic and optoelectronic devices on commonly used c-sapphire and Si substrates.« less

Monolithic optofluidic mode coupler for broadband thermo- and piezo-optical characterization of liquids.

PubMed

Pumpe, Sebastian; Chemnitz, Mario; Kobelke, Jens; Schmidt, Markus A

2017-09-18

We present a monolithic fiber device that enables investigation of the thermo- and piezo-optical properties of liquids using straightforward broadband transmission measurements. The device is a directional mode coupler consisting of a multi-mode liquid core and a single-mode glass core with pronounced coupling resonances whose wavelength strongly depend on the operation temperature. We demonstrated the functionality and flexibility of our device for carbon disulfide, extending the current knowledge of the thermo-optic coefficient by 200 nm at 20 °C and uniquely for high temperatures. Moreover, our device allows measuring the piezo-optic coefficient of carbon disulfide, confirming results first obtained by Röntgen in 1891. Finally, we applied our approach to obtain the dispersion of the thermo-optic coefficients of benzene and tetrachloroethylene between 450 and 800 nm, whereas no data was available for the latter so far.

Low noise InP-based MMIC receivers for W-band

NASA Technical Reports Server (NTRS)

Leonard, Regis F.

1991-01-01

A program to develop a monolithic W-band low noise amplifier (a critical element in any W-band communications, sensors, or radar application) is described. Goals of the program include a completely monolithic low noise amplifier, less than a 3.5 dB noise figure, and a monolithic mixer suitable for integration with the LNA.

An NFC-Enabled CMOS IC for a Wireless Fully Implantable Glucose Sensor.

PubMed

DeHennis, Andrew; Getzlaff, Stefan; Grice, David; Mailand, Marko

2016-01-01

This paper presents an integrated circuit (IC) that merges integrated optical and temperature transducers, optical interface circuitry, and a near-field communication (NFC)-enabled digital, wireless readout for a fully passive implantable sensor platform to measure glucose in people with diabetes. A flip-chip mounted LED and monolithically integrated photodiodes serve as the transduction front-end to enable fluorescence readout. A wide-range programmable transimpedance amplifier adapts the sensor signals to the input of an 11-bit analog-to-digital converter digitizing the measurements. Measurement readout is enabled by means of wireless backscatter modulation to a remote NFC reader. The system is able to resolve current levels of less than 10 pA with a single fluorescent measurement energy consumption of less than 1 μJ. The wireless IC is fabricated in a 0.6-μm-CMOS process and utilizes a 13.56-MHz-based ISO15693 for passive wireless readout through a NFC interface. The IC is utilized as the core interface to a fluorescent, glucose transducer to enable a fully implantable sensor-based continuous glucose monitoring system.

The Impact of Software Structure and Policy on CPU and Memory System Performance

DTIC Science & Technology

1994-05-01

Mach 3.0 is that Ultrix is a monolithic or integrated system, and Mach 3.0 is a microkernel or kernelized system. In a monolithic system, all system...services are implemented in a single system context, the monolithic kernel . In a microkernel system such as Mach 3.0, primitive abstractions such as...separate protection domain as a server. Many current operating system text books discuss microkernel and monolithic kernel design. (See [17, 73, 77].) The

Monolithic FET structures for high-power control component applications

NASA Astrophysics Data System (ADS)

Shifrin, Mitchell B.; Katzin, Peter J.; Ayasli, Yalcin

1989-12-01

A monolithic FET switch is described that can be integrated with other monolithic functions or used as a discrete component in a microwave integrated circuit structure. This device increases the power-handling capability of the conventional single FET switch by an order of magnitude. It does this by overcoming the breakdown voltage limitation of the FET device. The design, fabrication, and performance of two high-power control components using these circuits are described as examples of the implementation of this technology. They are an L-band terminated single-pole, single-throw (SPST) switch and an L-band limiter).

Affinity monolith-integrated poly(methyl methacrylate) microchips for on-line protein extraction and capillary electrophoresis.

PubMed

Sun, Xiuhua; Yang, Weichun; Pan, Tao; Woolley, Adam T

2008-07-01

Immunoaffinity monolith pretreatment columns have been coupled with capillary electrophoresis separation in poly(methyl methacrylate) (PMMA) microchips. Microdevices were designed with eight reservoirs to enable the electrically controlled transport of selected analytes and solutions to carry out integrated immunoaffinity extraction and electrophoretic separation. The PMMA microdevices were fabricated reproducibly and with high fidelity by solvent imprinting and thermal bonding methods. Monoliths with epoxy groups for antibody immobilization were prepared by direct in situ photopolymerization of glycidyl methacrylate and ethylene glycol dimethacrylate in a porogenic solvent consisting of 70% 1-dodecanol and 30% cyclohexanol. Antifluorescein isothiocyanate was utilized as a model affinity group in the monoliths, and the immobilization process was optimized. A mean elution efficiency of 92% was achieved for the monolith-based extraction of fluorescein isothiocyanate (FITC)-tagged human serum albumin. FITC-tagged proteins were purified from a contaminant protein and then separated electrophoretically using these devices. The developed immunoaffinity column/capillary electrophoresis microdevices show great promise for combining sample pretreatment and separation in biomolecular analysis.

Affinity Monolith-Integrated Poly(methyl Methacrylate) Microchips for On-Line Protein Extraction and Capillary Electrophoresis

PubMed Central

Sun, Xiuhua; Yang, Weichun; Pan, Tao; Woolley, Adam T.

2008-01-01

Immunoaffinity monolith pretreatment columns have been coupled with capillary electrophoresis separation in poly(methyl methacrylate) (PMMA) microchips. Microdevices were designed with 8 reservoirs to enable the electrically controlled transport of selected analytes and solutions to carry out integrated immunoaffinity extraction and electrophoretic separation. The PMMA microdevices were fabricated reproducibly and with high fidelity by solvent imprinting and thermal bonding methods. Monoliths with epoxy groups for antibody immobilization were prepared by direct in-situ photopolymerization of glycidyl methacrylate and ethylene dimethacrylate in a porogenic solvent consisting of 70% dodecanol and 30% hexanol. Anti-fluorescein isothiocyanate (FITC) was utilized as a model affinity group in the monoliths, and the immobilization process was optimized. A mean elution efficiency of 92% was achieved for the monolith-based extraction of FITC-tagged human serum albumin. FITC-tagged proteins were purified from a contaminant protein and then separated electrophoretically using these devices. The developed immunoaffinity column/capillary electrophoresis microdevices show great promise for combining sample pretreatment and separation in biomolecular analysis. PMID:18479142

Monolithically integrated self-rolled-up microtube-based vertical coupler for three-dimensional photonic integration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Xin; Arbabi, Ehsan; Goddard, Lynford L.

2015-07-20

We demonstrate a self-rolled-up microtube-based vertical photonic coupler monolithically integrated on top of a ridge waveguide to achieve three-dimensional (3D) photonic integration. The fabrication process is fully compatible with standard planar silicon processing technology. Strong light coupling between the vertical coupler and the ridge waveguide was observed experimentally, which may provide an alternative route for 3D heterogeneous photonic integration. The highest extinction ratio observed in the transmission spectrum passing through the ridge waveguide was 23 dB.

Photonic crystal fiber technology for high-performance all-fiber monolithic ultrafast fiber amplifiers

NASA Astrophysics Data System (ADS)

Papior, Sidsel R.; Weirich, Johannes; Johansen, Mette M.; Jakobsen, Christian; Michieletto, Mattia; Triches, Marco; Kristensen, Torben; Olesen, Anders S.; Petersen, Christian; Andersen, Thomas V.; Maack, Martin D.; Alkeskjold, Thomas T.

2018-02-01

Photonic crystal fiber (PCF) technology for ultrafast fiber amplifiers traditionally uses air holes as key elements for large mode area (LMA) fiber designs. These air holes are crucial for the performance of high-end LMA PCFs, but makes splicing and interfacing more complex. To reduce this complexity in mid-range amplifiers, we present single-mode polarization-maintaining Yb-doped LMA PCFs without air holes for easier splicing into monolithic all-fiber amplifier designs. A 30 μm core all-solid spliceable PCF is presented, and amplification of 1064 nm light above 50 W with an optical to optical efficiency of 80 % is demonstrated. Furthermore, to demonstrate the excellent reliability of PCF based monolithic amplifiers, we demonstrate ultra-longterm performance data of > 35 khrs on a 14 μm core step-index type PCF amplifier with low long-term power degradation slope of < 1.5 % / 10,000 h.

Design and fabrication of MEMS devices using the integration of MUMPs, trench-refilled molding, DRIE and bulk silicon etching processes

NASA Astrophysics Data System (ADS)

Wu, Mingching; Fang, Weileun

2005-03-01

This work integrates multi-depth DRIE etching, trench-refilled molding, two poly-Si layers MUMPs and bulk releasing to improve the variety and performance of MEMS devices. In summary, the present fabrication process, named MOSBE II, has three merits. First, this process can monolithically fabricate and integrate poly-Si thin-film structures with different thicknesses and stiffnesses, such as the flexible spring and the stiff mirror plate. Second, multi-depth structures, such as vertical comb electrodes, are available from the DRIE processes. Third, a cavity under the micromachined device is provided by the bulk silicon etching process, so that a large out-of-plane motion is allowed. In application, an optical scanner driven by the self-aligned vertical comb actuator was demonstrated. The poly-Si micromachined components fabricated by MOSBE II can further integrate with the MUMPs devices to establish a more powerful MOEMS platform.

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

NASA Technical Reports Server (NTRS)

Larsson, A.; Cody, J.; Forouhar, S.; Lang, R. J.

1990-01-01

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2006-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

An optical relay approach to very low cost hybrid polymer-complementary metal-oxide semiconductor electrophoresis instrumentation.

PubMed

Hall, Gordon H; Sloan, David L; Ma, Tianchi; Couse, Madeline H; Martel, Stephane; Elliott, Duncan G; Glerum, D Moira; Backhouse, Christopher J

2014-07-04

Electrophoresis is an integral part of many molecular diagnostics protocols and an inexpensive implementation would greatly facilitate point-of-care (POC) applications. However, the high instrumentation cost presents a substantial barrier, much of it associated with fluorescence detection. The cost of such systems could be substantially reduced by placing the fluidic channel and photodiode directly above the detector in order to collect a larger portion of the fluorescent light. In future, this could be achieved through the integration and monolithic fabrication of photoresist microchannels on complementary metal-oxide semiconductor microelectronics (CMOS). However, the development of such a device is expensive due to high non-recurring engineering costs. To facilitate that development, we present a system that utilises an optical relay to integrate low-cost polymeric microfluidics with a CMOS chip that provides a photodiode, analog-digital conversion and a standard serial communication interface. This system embodies an intermediate level of microelectronic integration, and significantly decreases development costs. With a limit of detection of 1.3±0.4nM of fluorescently end-labeled deoxyribonucleic acid (DNA), it is suitable for diagnostic applications. Copyright © 2014 Elsevier B.V. All rights reserved.

Synthesis of Porous Carbon Monoliths Using Hard Templates.

PubMed

Klepel, Olaf; Danneberg, Nina; Dräger, Matti; Erlitz, Marcel; Taubert, Michael

2016-03-21

The preparation of porous carbon monoliths with a defined shape via template-assisted routes is reported. Monoliths made from porous concrete and zeolite were each used as the template. The porous concrete-derived carbon monoliths exhibited high gravimetric specific surface areas up to 2000 m²·g -1 . The pore system comprised macro-, meso-, and micropores. These pores were hierarchically arranged. The pore system was created by the complex interplay of the actions of both the template and the activating agent as well. On the other hand, zeolite-made template shapes allowed for the preparation of microporous carbon monoliths with a high volumetric specific surface area. This feature could be beneficial if carbon monoliths must be integrated into technical systems under space-limited conditions.

Synthesis of Porous Carbon Monoliths Using Hard Templates

PubMed Central

Klepel, Olaf; Danneberg, Nina; Dräger, Matti; Erlitz, Marcel; Taubert, Michael

2016-01-01

The preparation of porous carbon monoliths with a defined shape via template-assisted routes is reported. Monoliths made from porous concrete and zeolite were each used as the template. The porous concrete-derived carbon monoliths exhibited high gravimetric specific surface areas up to 2000 m2·g−1. The pore system comprised macro-, meso-, and micropores. These pores were hierarchically arranged. The pore system was created by the complex interplay of the actions of both the template and the activating agent as well. On the other hand, zeolite-made template shapes allowed for the preparation of microporous carbon monoliths with a high volumetric specific surface area. This feature could be beneficial if carbon monoliths must be integrated into technical systems under space-limited conditions. PMID:28773338

OPO performance with a long pulse length, single frequency Nd:YAG laser pump. [Optical Parametric Oscillators

NASA Technical Reports Server (NTRS)

Kozlovsky, W. J.; Gustafson, E. K.; Eckardt, R. C.; Byer, R. L.

1988-01-01

With the advent of new nonlinear materials and single-frequency pump sources, there is renewed interest in optical parametric oscillators (OPOs). A single-mode diode-laser-pumped monolithic Nd:YAG nonplanar ring laser that is both amplified and frequency doubled is used to pump a monolithic MgO:LiNbO3 pulsed singly resonant OPO. The OPO signal output was temperature tuned from 834 to 958 nm, producing an idler tuning from 1.47 to 1.2 microns. Efforts toward a CW all-solid-state doubly resonant OPO are also described.

End-pumped 300 W continuous-wave ytterbium-doped all-fiber laser with master oscillator multi-stage power amplifiers configuration.

PubMed

Yin, Shupeng; Yan, Ping; Gong, Mali

2008-10-27

An end-pumped ytterbium-doped all-fiber laser with 300 W output in continuous regime was reported, which was based on master oscillator multi-stage power amplifiers configuration. Monolithic fiber laser system consisted of an oscillator stage and two amplifier stages. Total optical-optical efficiency of monolithic fiber laser was approximately 65%, corresponding to 462 W of pump power coupled into laser system. We proposed a new method to connect power amplifier stage, which was crucial for the application of end-pumped combiner in high power MOPAs all-fiber laser.

Chaos-on-a-chip secures data transmission in optical fiber links.

PubMed

Argyris, Apostolos; Grivas, Evangellos; Hamacher, Michael; Bogris, Adonis; Syvridis, Dimitris

2010-03-01

Security in information exchange plays a central role in the deployment of modern communication systems. Besides algorithms, chaos is exploited as a real-time high-speed data encryption technique which enhances the security at the hardware level of optical networks. In this work, compact, fully controllable and stably operating monolithic photonic integrated circuits (PICs) that generate broadband chaotic optical signals are incorporated in chaos-encoded optical transmission systems. Data sequences with rates up to 2.5 Gb/s with small amplitudes are completely encrypted within these chaotic carriers. Only authorized counterparts, supplied with identical chaos generating PICs that are able to synchronize and reproduce the same carriers, can benefit from data exchange with bit-rates up to 2.5Gb/s with error rates below 10(-12). Eavesdroppers with access to the communication link experience a 0.5 probability to detect correctly each bit by direct signal detection, while eavesdroppers supplied with even slightly unmatched hardware receivers are restricted to data extraction error rates well above 10(-3).

Toolbox for the design of LiNbO3-based passive and active integrated quantum circuits

NASA Astrophysics Data System (ADS)

Sharapova, P. R.; Luo, K. H.; Herrmann, H.; Reichelt, M.; Meier, T.; Silberhorn, C.

2017-12-01

We present and discuss perspectives of current developments on advanced quantum optical circuits monolithically integrated in the lithium niobate platform. A set of basic components comprising photon pair sources based on parametric down conversion (PDC), passive routing elements and active electro-optically controllable switches and polarisation converters are building blocks of a toolbox which is the basis for a broad range of diverse quantum circuits. We review the state-of-the-art of these components and provide models that properly describe their performance in quantum circuits. As an example for applications of these models we discuss design issues for a circuit providing on-chip two-photon interference. The circuit comprises a PDC section for photon pair generation followed by an actively controllable modified mach-Zehnder structure for observing Hong-Ou-Mandel interference. The performance of such a chip is simulated theoretically by taking even imperfections of the properties of the individual components into account.

Fusion of Renewable Ring Resonator Lasers and Ultrafast Laser Inscribed Photonic Waveguides

PubMed Central

Chandrahalim, Hengky; Rand, Stephen C.; Fan, Xudong

2016-01-01

We demonstrated the monolithic integration of reusable and wavelength reconfigurable ring resonator lasers and waveguides of arbitrary shapes to out-couple and guide laser emission on the same fused-silica chip. The ring resonator hosts were patterned by a single-mask standard lithography, whereas the waveguides were inscribed in the proximity of the ring resonator by using 3-dimensional femtosecond laser inscription technology. Reusability of the integrated ring resonator – waveguide system was examined by depositing, removing, and re-depositing dye-doped SU-8 solid polymer, SU-8 liquid polymer, and liquid solvent (toluene). The wavelength reconfigurability was validated by employing Rhodamine 6G (R6G) and 3,3′-Diethyloxacarbocyanine iodide (CY3) as exemplary gain media. In all above cases, the waveguide was able to couple out and guide the laser emission. This work opens a door to reconfigurable active and passive photonic devices for on-chip coherent light sources, optical signal processing, and the investigation of new optical phenomena. PMID:27600872

Fusion of Renewable Ring Resonator Lasers and Ultrafast Laser Inscribed Photonic Waveguides.

PubMed

Chandrahalim, Hengky; Rand, Stephen C; Fan, Xudong

2016-09-07

We demonstrated the monolithic integration of reusable and wavelength reconfigurable ring resonator lasers and waveguides of arbitrary shapes to out-couple and guide laser emission on the same fused-silica chip. The ring resonator hosts were patterned by a single-mask standard lithography, whereas the waveguides were inscribed in the proximity of the ring resonator by using 3-dimensional femtosecond laser inscription technology. Reusability of the integrated ring resonator - waveguide system was examined by depositing, removing, and re-depositing dye-doped SU-8 solid polymer, SU-8 liquid polymer, and liquid solvent (toluene). The wavelength reconfigurability was validated by employing Rhodamine 6G (R6G) and 3,3'-Diethyloxacarbocyanine iodide (CY3) as exemplary gain media. In all above cases, the waveguide was able to couple out and guide the laser emission. This work opens a door to reconfigurable active and passive photonic devices for on-chip coherent light sources, optical signal processing, and the investigation of new optical phenomena.

Dynamic metasurface lens based on MEMS technology

NASA Astrophysics Data System (ADS)

Roy, Tapashree; Zhang, Shuyan; Jung, Il Woong; Troccoli, Mariano; Capasso, Federico; Lopez, Daniel

2018-02-01

In the recent years, metasurfaces, being flat and lightweight, have been designed to replace bulky optical components with various functions. We demonstrate a monolithic Micro-Electro-Mechanical System (MEMS) integrated with a metasurface-based flat lens that focuses light in the mid-infrared spectrum. A two-dimensional scanning MEMS platform controls the angle of the lens along two orthogonal axes by ±9°, thus enabling dynamic beam steering. The device could be used to compensate for off-axis incident light and thus correct for aberrations such as coma. We show that for low angular displacements, the integrated lens-on-MEMS system does not affect the mechanical performance of the MEMS actuators and preserves the focused beam profile as well as the measured full width at half maximum. We envision a new class of flat optical devices with active control provided by the combination of metasurfaces and MEMS for a wide range of applications, such as miniaturized MEMS-based microscope systems, LIDAR scanners, and projection systems.

Mid-infrared materials and devices on a Si platform for optical sensing

PubMed Central

Singh, Vivek; Lin, Pao Tai; Patel, Neil; Lin, Hongtao; Li, Lan; Zou, Yi; Deng, Fei; Ni, Chaoying; Hu, Juejun; Giammarco, James; Soliani, Anna Paola; Zdyrko, Bogdan; Luzinov, Igor; Novak, Spencer; Novak, Jackie; Wachtel, Peter; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kimerling, Lionel C; Agarwal, Anuradha M

2014-01-01

In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors. PMID:27877641

Concrete Embedded Dye-Synthesized Photovoltaic Solar Cell

PubMed Central

Hosseini, T.; Flores-Vivian, I.; Sobolev, K.; Kouklin, N.

2013-01-01

This work presents the concept of a monolithic concrete-integrated dye-synthesized photovoltaic solar cell for optical-to-electrical energy conversion and on-site power generation. The transport measurements carried out in the dark revealed the presence of VOC of ~190 mV and ISC of ~9 μA, induced by the electrochemical conversion of concrete-supplied ionic impurities at the electrodes. The current-voltage measurements performed under illumination at incident optical powers of ~46 mW confirmed the generation of electrical power of ~0.64 μW with almost half generated via battery effect. This work presents a first step towards realizing the additional pathways to low-cost electrical power production in urban environments based on a combined use of organic dyes, nanotitania and concrete technology. PMID:24067664

Metasurface polarization splitter

PubMed Central

Slovick, Brian A.; Zhou, You; Yu, Zhi Gang; Kravchenko, Ivan I.; Briggs, Dayrl P.; Moitra, Parikshit; Krishnamurthy, Srini

2017-01-01

Polarization beam splitters, devices that separate the two orthogonal polarizations of light into different propagation directions, are among the most ubiquitous optical elements. However, traditionally polarization splitters rely on bulky optical materials, while emerging optoelectronic and photonic circuits require compact, chip-scale polarization splitters. Here, we show that a rectangular lattice of cylindrical silicon Mie resonators functions as a polarization splitter, efficiently reflecting one polarization while transmitting the other. We show that the polarization splitting arises from the anisotropic permittivity and permeability of the metasurface due to the twofold rotational symmetry of the rectangular unit cell. The high polarization efficiency, low loss and low profile make these metasurface polarization splitters ideally suited for monolithic integration with optoelectronic and photonic circuits. This article is part of the themed issue ‘New horizons for nanophotonics’. PMID:28220002

RF Testing Of Microwave Integrated Circuits

NASA Technical Reports Server (NTRS)

Romanofsky, R. R.; Ponchak, G. E.; Shalkhauser, K. A.; Bhasin, K. B.

1988-01-01

Fixtures and techniques are undergoing development. Four test fixtures and two advanced techniques developed in continuing efforts to improve RF characterization of MMIC's. Finline/waveguide test fixture developed to test submodules of 30-GHz monolithic receiver. Universal commercially-manufactured coaxial test fixture modified to enable characterization of various microwave solid-state devices in frequency range of 26.5 to 40 GHz. Probe/waveguide fixture is compact, simple, and designed for non destructive testing of large number of MMIC's. Nondestructive-testing fixture includes cosine-tapered ridge, to match impedance wavequide to microstrip. Advanced technique is microwave-wafer probing. Second advanced technique is electro-optical sampling.

Silicon millimetre-wave integrated-circuit (SIMMWIC) SPST switch

NASA Astrophysics Data System (ADS)

Stabile, P. J.; Rosen, A.

1984-10-01

The first silicon millimetre-wave integrated circuit (SIMMWIC) has been successfully fabricated. This circuit is a monolithic SPST switch with a 3 dB bandwidth of 20 percent and a minimum isolation of 21.6 dB across the band (centre frequency is 36.75 GHz). This monolithic circuit is a low-cost reproducible building block for all millimetre-wave control applications.

A hybrid fluorous monolithic capillary column with integrated nanoelectrospray ionization emitter for determination of perfluoroalkyl acids by nano-liquid chromatography-nanoelectrospray ionization-mass spectrometry/mass spectrometry.

PubMed

Zhang, Haiyang; Ou, Junjie; Wei, Yinmao; Wang, Hongwei; Liu, Zhongshan; Zou, Hanfa

2016-04-01

A hybrid fluorous monolithic column was simply prepared via photo-initiated free radical polymerization of an acrylopropyl polyhedral oligomeric silsesquioxane (acryl-POSS) and a perfluorous monomer (2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoroheptyl acrylate) in UV-transparent fused-silica capillaries within 5min. The physical characterization of hybrid fluorous monolith, including scanning electron microscopy (SEM), Fourier transform infrared (FT-IR) spectroscopy, mercury intrusion porosimetry (MIP) and nitrogen adsorption/desorption measurement was performed. Chromatographic performance was also evaluated by capillary liquid chromatography (cLC). Due to the fluorous-fluorous interaction between fluorous monolith and analytes, fluorobenzenes could well be separated, and the column efficiencies reached 86,600-92,500plates/m at the velocity of 0.87mm/s for alkylbenzenes and 51,900-76,000plates/m at the velocity of 1.10mm/s for fluorobenzenes. Meanwhile, an approach to integrate nanoelectrospray ionization (ESI) emitter with hybrid fluorous monolithic column was developed for quantitative determination of perfluoroalkyl acids by nanoHPLC-ESI-MS/MS. The integration design could minimize extracolumn volume, thus excluding undesirable peak broadening and improving separation performance. Copyright © 2016 Elsevier B.V. All rights reserved.

Monolithic Laser.

DTIC Science & Technology

1977-09-01

procedures that could be effectively used . Neither chemical nor in situ vapor etch techniques alleviated these problems. The presence of M in the top...mask consisting of rectangles 300 um x 200 urn. The crystal is then chemically etched in two steps. First, a calibrated Na0H:H.0. 39 etch ^ is used ... fabricated (including optical cavity formation) monolithically using conventional photolithographic fabrication technology. This development is a

15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates

DOE PAGES

Vaisman, Michelle; Fan, Shizhao; Nay Yaung, Kevin; ...

2017-07-26

As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. Furthermore, we present a separate Si bottom cell with a 1.7more » eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we also compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.« less

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors †

PubMed Central

Georgitzikis, Epimitheas; Vamvaka, Ioanna; Frazzica, Fortunato; Van Olmen, Jan; De Moor, Piet; Heremans, Paul; Hens, Zeger; Cheyns, David

2017-01-01

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III–V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10−6 A/cm2 at −2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors. PMID:29232871

Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems

NASA Astrophysics Data System (ADS)

Ku, Walter H.

1989-05-01

The objectives of this research are to develop analytical and computer aided design techniques for monolithic microwave and millimeter wave integrated circuits (MMIC and MIMIC) and subsystems and to design and fabricate those ICs. Emphasis was placed on heterojunction-based devices, especially the High Electron Mobility Transition (HEMT), for both low noise and medium power microwave and millimeter wave applications. Circuits to be considered include monolithic low noise amplifiers, power amplifiers, and distributed and feedback amplifiers. Interactive computer aided design programs were developed, which include large signal models of InP MISFETs and InGaAs HEMTs. Further, a new unconstrained optimization algorithm POSM was developed and implemented in the general Analysis and Design program for Integrated Circuit (ADIC) for assistance in the design of largesignal nonlinear circuits.

Mode-locked laser with pulse interleavers in a monolithic photonic integrated circuit for millimeter wave and terahertz carrier generation.

PubMed

Lo, Mu-Chieh; Guzmán, Robinson; Gordón, Carlos; Carpintero, Guillermo

2017-04-15

This Letter presents a photonics-based millimeter wave and terahertz frequency synthesizer using a monolithic InP photonic integrated circuit composed of a mode-locked laser (MLL) and two pulse interleaver stages to multiply the repetition rate frequency. The MLL is a multiple colliding pulse MLL producing an 80 GHz repetition rate pulse train. Through two consecutive monolithic pulse interleaver structures, each doubling the repetition rate, we demonstrate the achievement of 160 and 320 GHz. The fabrication was done on a multi-project wafer run of a generic InP photonic technology platform.

Fiberless multicolor neural optoelectrode for in vivo circuit analysis

PubMed Central

Kampasi, Komal; Stark, Eran; Seymour, John; Na, Kyounghwan; Winful, Herbert G.; Buzsáki, György; Wise, Kensall D.; Yoon, Euisik

2016-01-01

Maximizing the potential of optogenetic approaches in deep brain structures of intact animals requires optical manipulation of neurons at high spatial and temporal resolutions, while simultaneously recording electrical data from those neurons. Here, we present the first fiber-less optoelectrode with a monolithically integrated optical waveguide mixer that can deliver multicolor light at a common waveguide port to achieve multicolor modulation of the same neuronal population in vivo. We demonstrate successful device implementation by achieving efficient coupling between a side-emitting injection laser diode (ILD) and a dielectric optical waveguide mixer via a gradient-index (GRIN) lens. The use of GRIN lenses attains several design features, including high optical coupling and thermal isolation between ILDs and waveguides. We validated the packaged devices in the intact brain of anesthetized mice co-expressing Channelrhodopsin-2 and Archaerhodopsin in pyramidal cells in the hippocampal CA1 region, achieving high quality recording, activation and silencing of the exact same neurons in a given local region. This fully-integrated approach demonstrates the spatial precision and scalability needed to enable independent activation and silencing of the same or different groups of neurons in dense brain regions while simultaneously recording from them, thus considerably advancing the capabilities of currently available optogenetic toolsets. PMID:27485264

Fully integrated multi-optoelectronic synthesizer for THz pumping source in wireless communications with rich backup redundancy and wide tuning range.

PubMed

Xu, Junjie; Hou, Lianping; Deng, Qiufang; Han, Liangshun; Liang, Song; Marsh, John H; Zhu, Hongliang

2016-07-06

We report a monolithic photonic integrated circuit (PIC) for THz communication applications. The PIC generates up to 4 optical frequency lines which can be mixed in a separate device to generate THz radiation, and each of the optical lines can be modulated individually to encode data. Physically, the PIC comprises an array of wavelength tunable distributed feedback lasers each with its own electro-absorption modulator. The lasers are designed with a long cavity to operate with a narrow linewidth, typically <4 MHz. The light from the lasers is coupled via an multimode interference (MMI) coupler into a semiconductor optical amplifier (SOA). By appropriate selection and biasing of pairs of lasers, the optical beat signal can be tuned continuously over the range from 0.254 THz to 2.723 THz. The EAM of each channel enables signal leveling balanced between the lasers and realizing data encoding, currently at data rates up to 6.5 Gb/s. The PIC is fabricated using regrowth-free techniques, making it economic for volume applications, such for use in data centers. The PIC also has a degree of redundancy, making it suitable for applications, such as inter-satellite communications, where high reliability is mandatory.

Optimization of monolithic columns for microfluidic devices

NASA Astrophysics Data System (ADS)

Pagaduan, Jayson V.; Yang, Weichun; Woolley, Adam T.

2011-06-01

Monolithic columns offer advantages as solid-phase extractors because they offer high surface area that can be tailored to a specific function, fast mass transport, and ease of fabrication. Porous glycidyl methacrylate-ethylene glycol dimethacrylate monoliths were polymerized in-situ in microfluidic devices, without pre-treatment of the poly(methyl methacrylate) channel surface. Cyclohexanol, 1-dodecanol and Tween 20 were used to control the pore size of the monoliths. The epoxy groups on the monolith surface can be utilized to immobilize target-specific probes such as antibodies, aptamers, or DNA for biomarker detection. Microfluidic devices integrated with solid-phase extractors should be useful for point-of-care diagnostics in detecting specific biomarkers from complex biological fluids.

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

PubMed

Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

2015-03-25

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrochemical properties of monolithic nickel sulfide electrodes for use in sodium batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Go, Dae-Yeon; Park, Jinsoo, E-mail: jsp@ikw.ac.kr; Noh, Pan-Jin

2014-10-15

Highlights: • We succeeded in preparing monolithic Ni{sub 3}S{sub 2} integrated electrode through the sulfuration. • The sulfuration is a facile and useful method to synthesize metal sulfides with nanostructure. • As-prepared monolithic Ni{sub 3}S{sub 2} electrodes showed very stable and cycle performance over charge/discharge cycling. - Abstract: Monolithic nickel sulfide electrodes were prepared using a facile synthesis method, sulfuration and annealing. As-prepared Ni{sub 3}S{sub 2} electrodes were characterized by X-ray diffractometry and field emission scanning electron microscopy. Thermal stability was determined by thermal gravimetric analysis and differential scanning calorimetry. Electrochemical properties were measured by galvanostatic charge and discharge cyclingmore » for Na-ion batteries. Three kinds of Ni{sub 3}S{sub 2} electrodes were prepared by varying the sulfuration time (5, 15 and 25 min). The electrochemical results indicated that the capacities increased with an increase in sulfuration time and the cycle performance was stable as a result of monolithic integration of nanostructured Ni{sub 3}S{sub 2} on Ni plates, leading to low interfacial resistance.« less

Single-frequency diode-pumped lasers for free-space optical communication

NASA Technical Reports Server (NTRS)

Kane, Thomas J.; Cheng, Emily A. P.; Gerstenberger, David C.; Wallace, Richard W.

1990-01-01

Recent advances in laser technology for intersatellite optical communication systems are reviewed and illustrated with graphs and diagrams. Topics addressed include (1) single-frequency diode-pumped Nd:YAG lasers of monolithic ring configuration (yielding 368-384 mW output power with 1-W pumping), (2) injection chaining of up to 10 monolithic resonators to achieve redundancy and/or higher output power, (3) 2-kHz-linewidth 5-mW versions of (1) which are tunable over a 30-MHz range for use as local oscillators in coherent communication, (4) resonant external modulation and doubling or resonant phase modulation of diode-pumped lasers, and (5) wavelength multiplexing.

Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

DOEpatents

Murray, Christopher S.; Wilt, David M.

2000-01-01

An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

Monolithic multi-color light emission/detection device

DOEpatents

Wanlass, Mark W.

1995-01-01

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber.

Optical properties of pre-colored dental monolithic zirconia ceramics.

PubMed

Kim, Hee-Kyung; Kim, Sung-Hun

2016-12-01

The purposes of this study were to evaluate the optical properties of recently marketed pre-colored monolithic zirconia ceramics and to compare with those of veneered zirconia and lithium disilicate glass ceramics. Various shades of pre-colored monolithic zirconia, veneered zirconia, and lithium disilicate glass ceramic specimens were tested (17.0×17.0×1.5mm, n=5). CIELab color coordinates were obtained against white, black, and grey backgrounds with a spectrophotometer. Color differences of the specimen pairs were calculated by using the CIEDE2000 (ΔE 00 ) formula. The translucency parameter (TP) was derived from ΔE 00 of the specimen against a white and a black background. X-ray diffraction was used to determine the crystalline phases of monolithic zirconia specimens. Data were analyzed with 1-way ANOVA, Scheffé post hoc, and Pearson correlation testing (α=0.05). For different shades of the same ceramic brand, there were significant differences in L * , a * , b * , and TP values in most ceramic brands. With the same nominal shade (A2), statistically significant differences were observed in L * , a * , b * , and TP values among different ceramic brands and systems (P<0.001). The color differences between pre-colored monolithic zirconia and veneered zirconia or lithium disilicate glass ceramics of the corresponding nominal shades ranged beyond the acceptability threshold. Due to the high L * values and low a * and b * values, pre-colored monolithic zirconia ceramics can be used with additional staining to match neighboring restorations or natural teeth. Due to their high value and low chroma, unacceptable color mismatch with adjacent ceramic restorations might be expected. Copyright © 2016 Elsevier Ltd. All rights reserved.

High-Q/V Monolithic Diamond Microdisks Fabricated with Quasi-isotropic Etching.

PubMed

Khanaliloo, Behzad; Mitchell, Matthew; Hryciw, Aaron C; Barclay, Paul E

2015-08-12

Optical microcavities enhance light-matter interactions and are essential for many experiments in solid state quantum optics, optomechanics, and nonlinear optics. Single crystal diamond microcavities are particularly sought after for applications involving diamond quantum emitters, such as nitrogen vacancy centers, and for experiments that benefit from diamond's excellent optical and mechanical properties. Light-matter coupling rates in experiments involving microcavities typically scale with Q/V, where Q and V are the microcavity quality-factor and mode-volume, respectively. Here we demonstrate that microdisk whispering gallery mode cavities with high Q/V can be fabricated directly from bulk single crystal diamond. By using a quasi-isotropic oxygen plasma to etch along diamond crystal planes and undercut passivated diamond structures, we create monolithic diamond microdisks. Fiber taper based measurements show that these devices support TE- and TM-like optical modes with Q > 1.1 × 10(5) and V < 11(λ/n) (3) at a wavelength of 1.5 μm.

Two stage dual gate MESFET monolithic gain control amplifier for Ka-band

NASA Technical Reports Server (NTRS)

Sokolov, V.; Geddes, J.; Contolatis, A.

1987-01-01

A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.

Polymer waveguide based hybrid opto-electric integration technology

NASA Astrophysics Data System (ADS)

Mao, Jinbin; Deng, Lingling; Jiang, Xiyan; Ren, Rong; Zhai, Yumeng; Wang, Jin

2014-10-01

While monolithic integration especially based on InP appears to be quite an expensive solution for optical devices, hybrid integration solutions using cheaper material platforms are considered powerful competitors because of the high freedom of design, yield optimization and relative cost-efficiency. Among them, the polymer planar-lightwave circuit (PLC) technology is regarded attractive as polymer offers the potential of fairly simple and low-cost fabrication, and of low-cost packaging. In our work, polymer PLC was fabricated by using the standard reactive ion etching (RIE) technique, while other active and passive devices can be integrated on the polymer PLC platform. Exemplary polymer waveguide devices was a 13-channel arrayed waveguide grating (AWG) chip, where the central channel cross-talk was below -30dB and the polarization dependent frequency shift was mitigated by inserting a half wave plate. An optical 900 hybrid was also realized with one 2×4 multi-mode interferometer (MMI). The excess insertion losses are below 4dB for the C-band, while the transmission imbalance is below 1.2dB. When such an optical hybrid was integrated vertically with mesa-type photodiodes, the responsivity of the individual PD was around 0.06 A/W, while the 3 dB bandwidth reaches 24 ~ 27 GHz, which is sufficient for 100Gbit/s receivers. Another example of the hybrid integration was to couple the polymer waveguides to fiber by applying fiber grooves, whose typical loss value was 0.2 dB per-facet over a broad spectral range from 1200-1600 nm.

Nanoparticle-Functionalized Porous Polymer Monolith Detection Elements for Surface-Enhanced Raman Scattering

PubMed Central

Liu, Jikun; White, Ian; DeVoe, Don L.

2011-01-01

The use of porous polymer monoliths functionalized with silver nanoparticles is introduced in this work for high-sensitivity surface-enhanced Raman scattering (SERS) detection. Preparation of the SERS detection elements is a simple process comprising the synthesis of a discrete polymer monolith section within a silica capillary, followed by physically trapping silver nanoparticle aggregates within the monolith matrix. A SERS detection limit of 220 fmol for Rhodamine 6G (R6G) is demonstrated, with excellent signal stability over a 24 h period. The capability of the SERS-active monolith for label-free detection of biomolecules was demonstrated by measurements of bradykinin and cyctochrome c. The SERS-active monoliths can be readily integrated into miniaturized micro-total-analysis systems for on-line and label-free detection for a variety of biosensing, bioanalytical, and biomedical applications. PMID:21322579

MicroSPE-nanoLC-ESI-MS/MS Using 10-μm-i.d. Silica-Based Monolithic Columns for Proteomics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Quanzhou; Page, Jason S.; Tang, Keqi

2007-01-01

Silica-based monolithic narrow bore capillary columns (25 cm x 10 µm i.d.) with an integrated nanoESI emitter has been developed to provide high quality and robust microSPE-nanoLC-ESI-MS analyses. The integrated nanoESI emitter adds no dead volume to the LC separation, allowing stable electrospray performance to be obtained at flow rates of ~10 nL/min. In an initial application we identified 5510 unique peptides covering 1443 distinct Shewanella oneidensis proteins from a 300 ng tryptic digest sample in a single 4-h LC-MS/MS analysis using a linear ion trap MS (LTQ). We found the use of an integrated monolithic ESI emitter provided enhancedmore » resistance to clogging and good run-to-run reproducibility.« less

Integrated spatial multiplexing of heralded single-photon sources

PubMed Central

Collins, M.J.; Xiong, C.; Rey, I.H.; Vo, T.D.; He, J.; Shahnia, S.; Reardon, C.; Krauss, T.F.; Steel, M.J.; Clark, A.S.; Eggleton, B.J.

2013-01-01

The non-deterministic nature of photon sources is a key limitation for single-photon quantum processors. Spatial multiplexing overcomes this by enhancing the heralded single-photon yield without enhancing the output noise. Here the intrinsic statistical limit of an individual source is surpassed by spatially multiplexing two monolithic silicon-based correlated photon pair sources in the telecommunications band, demonstrating a 62.4% increase in the heralded single-photon output without an increase in unwanted multipair generation. We further demonstrate the scalability of this scheme by multiplexing photons generated in two waveguides pumped via an integrated coupler with a 63.1% increase in the heralded photon rate. This demonstration paves the way for a scalable architecture for multiplexing many photon sources in a compact integrated platform and achieving efficient two-photon interference, required at the core of optical quantum computing and quantum communication protocols. PMID:24107840

Multi-format all-optical processing based on a large-scale, hybridly integrated photonic circuit.

PubMed

Bougioukos, M; Kouloumentas, Ch; Spyropoulou, M; Giannoulis, G; Kalavrouziotis, D; Maziotis, A; Bakopoulos, P; Harmon, R; Rogers, D; Harrison, J; Poustie, A; Maxwell, G; Avramopoulos, H

2011-06-06

We investigate through numerical studies and experiments the performance of a large scale, silica-on-silicon photonic integrated circuit for multi-format regeneration and wavelength-conversion. The circuit encompasses a monolithically integrated array of four SOAs inside two parallel Mach-Zehnder structures, four delay interferometers and a large number of silica waveguides and couplers. Exploiting phase-incoherent techniques, the circuit is capable of processing OOK signals at variable bit rates, DPSK signals at 22 or 44 Gb/s and DQPSK signals at 44 Gbaud. Simulation studies reveal the wavelength-conversion potential of the circuit with enhanced regenerative capabilities for OOK and DPSK modulation formats and acceptable quality degradation for DQPSK format. Regeneration of 22 Gb/s OOK signals with amplified spontaneous emission (ASE) noise and DPSK data signals degraded with amplitude, phase and ASE noise is experimentally validated demonstrating a power penalty improvement up to 1.5 dB.

Monolithic photonic integrated circuit with a GaN-based bent waveguide

NASA Astrophysics Data System (ADS)

Cai, Wei; Qin, Chuan; Zhang, Shuai; Yuan, Jialei; Zhang, Fenghua; Wang, Yongjin

2018-06-01

Integration of a transmitter, waveguide and receiver into a single chip can generate a multicomponent system with multiple functionalities. Here, we fabricate and characterize a GaN-based photonic integrated circuit (PIC) on a GaN-on-silicon platform. With removal of the silicon and back wafer thinning of the epitaxial film, ultrathin membrane-type devices and highly confined suspended GaN waveguides were formed. Two suspended-membrane InGaN/GaN multiple-quantum-well diodes (MQW-diodes) served as an MQW light-emitting diode (MQW-LED) to emit light and an MQW photodiode (MQW-PD) to sense light. The optical interconnects between the MQW-LED and MQW-PD were achieved using the GaN bent waveguide. The GaN-based PIC consisting of an MQW-LED, waveguides and an MQW-PD forms an in-plane light communication system with a data transmission rate of 70 Mbps.

Probing the Effects of Templating on the UV and Visible Light Photocatalytic Activity of Porous Nitrogen-Modified Titania Monoliths for Dye Removal.

PubMed

Nursam, Natalita M; Wang, Xingdong; Tan, Jeannie Z Y; Caruso, Rachel A

2016-07-13

Porous nitrogen-modified titania (N-titania) monoliths with tailored morphologies were prepared using phase separation and agarose gel templating techniques. The doping and templating process were simultaneously carried out in a one-pot step using alcohol amine-assisted sol-gel chemistry. The amount of polymer used in the monoliths that were prepared using phase separation was shown to affect both the physical and optical properties: higher poly(ethylene glycol) content increased the specific surface area, porosity, and visible light absorption of the final materials. For the agarose-templated monoliths, the infiltration conditions affected the monolith morphology. A porous monolith with high surface area and the least shrinkage was obtained when the N containing alkoxide precursor was infiltrated into the agarose scaffolds at 60 °C. The effect of the diverse porous morphologies on the photocatalytic activity of N-titania was studied for the decomposition of methylene blue (MB) under visible and UV light irradiation. The highest visible light activity was achieved by the agarose-templated N-titania monolith, in part due to higher N incorporation. This sample also showed better UV activity, partly because of the higher specific surface area (up to 112 m(2) g(-1)) compared to the phase separation-induced monoliths (up to 103 m(2) g(-1)). Overall, agarose-templated, porous N-titania monoliths provided better features for effectively removing the MB contaminant.

An absorptive single-pole four-throw switch using multiple-contact MEMS switches and its application to a monolithic millimeter-wave beam-forming network

NASA Astrophysics Data System (ADS)

Lee, Sanghyo; Kim, Jong-Man; Kim, Yong-Kweon; Kwon, Youngwoo

2009-01-01

In this paper, a new absorptive single-pole four-throw (SP4T) switch based on multiple-contact switching is proposed and integrated with a Butler matrix to demonstrate a monolithic beam-forming network at millimeter waves (mm waves). In order to simplify the switching driving circuit and reduce the number of unit switches in an absorptive SP4T switch, the individual switches were replaced with long-span multiple-contact switches using stress-free single-crystalline-silicon MEMS technology. This approach improves the mechanical stability as well as the manufacturing yield, thereby allowing successful integration into a monolithic beam former. The fabricated absorptive SP4T MEMS switch shows insertion loss less than 1.3 dB, return losses better than 11 dB at 30 GHz and wideband isolation performance higher than 39 dB from 20 to 40 GHz. The absorptive SP4T MEMS switch is integrated with a 4 × 4 Butler matrix on a single chip to implement a monolithic beam-forming network, directing beam into four distinct angles. Array factors from the measured data show that the proposed absorptive SPnT MEMS switch can be effectively used for high-performance mm-wave beam-switching systems. This work corresponds to the first demonstration of a monolithic beam-forming network using switched beams.

Microwave monolithic integrated circuit-related metrology at the National Institute of Standards and Technology

NASA Astrophysics Data System (ADS)

Reeve, Gerome; Marks, Roger; Blackburn, David

1990-12-01

How the National Institute of Standards and Technology (NIST) interacts with the GaAs community and the Defense Advanced Research Projects Agency microwave monolithic integrated circuit (MMIC) initiative is described. The organization of a joint industry and government laboratory consortium for MMIC-related metrology research is described along with some of the initial technical developments at NIST done in support of the consortium.

Monolithic 3D CMOS Using Layered Semiconductors.

PubMed

Sachid, Angada B; Tosun, Mahmut; Desai, Sujay B; Hsu, Ching-Yi; Lien, Der-Hsien; Madhvapathy, Surabhi R; Chen, Yu-Ze; Hettick, Mark; Kang, Jeong Seuk; Zeng, Yuping; He, Jr-Hau; Chang, Edward Yi; Chueh, Yu-Lun; Javey, Ali; Hu, Chenming

2016-04-06

Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Room-Temperature Low-Threshold Lasing from Monolithically Integrated Nanostructured Porous Silicon Hybrid Microcavities.

PubMed

Robbiano, Valentina; Paternò, Giuseppe M; La Mattina, Antonino A; Motti, Silvia G; Lanzani, Guglielmo; Scotognella, Francesco; Barillaro, Giuseppe

2018-05-22

Silicon photonics would strongly benefit from monolithically integrated low-threshold silicon-based laser operating at room temperature, representing today the main challenge toward low-cost and power-efficient electronic-photonic integrated circuits. Here we demonstrate low-threshold lasing from fully transparent nanostructured porous silicon (PSi) monolithic microcavities (MCs) infiltrated with a polyfluorene derivative, namely, poly(9,9-di- n-octylfluorenyl-2,7-diyl) (PFO). The PFO-infiltrated PSiMCs support single-mode blue lasing at the resonance wavelength of 466 nm, with a line width of ∼1.3 nm and lasing threshold of 5 nJ (15 μJ/cm 2 ), a value that is at the state of the art of PFO lasers. Furthermore, time-resolved photoluminescence shows a significant shortening (∼57%) of PFO emission lifetime in the PSiMCs, with respect to nonresonant PSi reference structures, confirming a dramatic variation of the radiative decay rate due to a Purcell effect. Our results, given also that blue lasing is a worst case for silicon photonics, are highly appealing for the development of low-cost, low-threshold silicon-based lasers with wavelengths tunable from visible to the near-infrared region by simple infiltration of suitable emitting polymers in monolithically integrated nanostructured PSiMCs.

Compact tunable silicon photonic differential-equation solver for general linear time-invariant systems.

PubMed

Wu, Jiayang; Cao, Pan; Hu, Xiaofeng; Jiang, Xinhong; Pan, Ting; Yang, Yuxing; Qiu, Ciyuan; Tremblay, Christine; Su, Yikai

2014-10-20

We propose and experimentally demonstrate an all-optical temporal differential-equation solver that can be used to solve ordinary differential equations (ODEs) characterizing general linear time-invariant (LTI) systems. The photonic device implemented by an add-drop microring resonator (MRR) with two tunable interferometric couplers is monolithically integrated on a silicon-on-insulator (SOI) wafer with a compact footprint of ~60 μm × 120 μm. By thermally tuning the phase shifts along the bus arms of the two interferometric couplers, the proposed device is capable of solving first-order ODEs with two variable coefficients. The operation principle is theoretically analyzed, and system testing of solving ODE with tunable coefficients is carried out for 10-Gb/s optical Gaussian-like pulses. The experimental results verify the effectiveness of the fabricated device as a tunable photonic ODE solver.

Hybrid optofluidic biosensors

NASA Astrophysics Data System (ADS)

Parks, Joshua W.

Optofluidics, born of the desire to create a system containing microfluidic environments with integrated optical elements, has seen dramatic increases in popularity over the last 10 years. In particular, the application of this technology towards chip based molecular sensors has undergone significant development. The most sensitive of these biosensors interface liquid- and solid-core antiresonant reflecting optical waveguides (ARROWs). These sensor chips are created using conventional silicon microfabrication. As such, ARROW technology has previously been unable to utilize state-of-the-art microfluidic developments because the technology used--soft polydimethyl siloxane (PDMS) micromolded chips--is unamenable to the silicon microfabrication workflows implemented in the creation of ARROW detection chips. The original goal of this thesis was to employ hybrid integration, or the connection of independently designed and fabricated optofluidic and microfluidic chips, to create enhanced biosensors with the capability of processing and detecting biological samples on a single hybrid system. After successful demonstration of this paradigm, this work expanded into a new direction--direct integration of sensing and detection technologies on a new platform with dynamic, multi-dimensional photonic re-configurability. This thesis reports a number of firsts, including: • 1,000 fold optical transmission enhancement of ARROW optofluidic detection chips through thermal annealing, • Detection of single nucleic acids on a silicon-based ARROW chip, • Hybrid optofluidic integration of ARROW detection chips and passive PDMS microfluidic chips, • Hybrid optofluidic integration of ARROW detection chips and actively controllable PDMS microfluidic chips with integrated microvalves, • On-chip concentration and detection of clinical Ebola nucleic acids, • Multimode interference (MMI) waveguide based wavelength division multiplexing for detection of single influenza virions, • All PDMS platform created from monolithically integrated solid- and liquid-core waveguides with single particle detection efficiency and directly integrated microvalves, featuring: ∘ Tunable/tailorable PDMS MMI waveguides, ∘ Lightvalves (optical switch/fluidic microvalve) with the ability to dynamically control light and fluid flow simultaneously, ∘ Lightvalve trap architecture with the ability to physically trap, detect, and analyze single biomolecules.

Lateral photovoltaic effect in flexible free-standing reduced graphene oxide film for self-powered position-sensitive detection

PubMed Central

Moon, In Kyu; Ki, Bugeun; Yoon, Seonno; Oh, Jungwoo

2016-01-01

Lightweight, simple and flexible self-powered photodetectors are urgently required for the development and application of advanced optical systems for the future of wearable electronic technology. Here, using a low-temperature reduction process, we report a chemical approach for producing freestanding monolithic reduced graphene oxide papers with different gradients of the carbon/oxygen concentration ratio. We also demonstrate a novel type of freestanding monolithic reduced graphene oxide self-powered photodetector based on a symmetrical metal–semiconductor–metal structure. Upon illumination by a 633-nm continuous wave laser, the lateral photovoltage is observed to vary linfearly with the laser position between two electrodes on the reduced graphene oxide surface. This result may suggest that the lateral photovoltaic effect in the reduced graphene oxide film originates from the built-in electric field by the combination of both the photothermal electric effect and the gradient of the oxygen-to-carbon composition. These results represent substantial progress toward novel, chemically synthesized graphene-based photosensors and suggest one-step integration of graphene-based optoelectronics in the future. PMID:27634110

VCSEL technologies and applications

NASA Astrophysics Data System (ADS)

Steinle, Gunther; Ramakrishnan, A.; Supper, D.; Kristen, Guenter; Pfeiffer, J.; Degen, Ch.; Riechert, Henning; Ebbinghaus, G.; Wolf, H. D.

2002-07-01

VCSEL devices for 850nm and 1300nm emission wavelength are presented, suitable for operation in single-channel interconnects as well as parallel optical links. Necessary properties for applications such as 10 Gigabit Ethernet and actual limits for the use of VCSELs are discussed in some detail. Recent progress is demonstrated in developing devices with production-friendly diameters larger than 5´m for 10Gbit/s operation. Also devices with a temperature insensitive monolithically integrated monitordiode are presented and discussed. In order to reach the emission wavelength of 1300nm with a GaAs-based monolithic VCSEL-structure, we use GaInNxAs1-x quantum-wells with a small nitrogen concentration x between one and two percent. We have two different growth approaches, such as solid source MBE with a rf-plasma source to produce reactive nitrogen from nitrogen gas N2 and MOCVD with unsymmetrical di-methylhydrazine as a precursor for nitrogen. The long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. Bitrates up to 10Gbit/s per channel can be achieved within both wavelength regimes.

Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

DOEpatents

Wang, Daojing [Daly City, CA; Yang, Peidong [Kensington, CA; Kim, Woong [Seoul, KR; Fan, Rong [Pasadena, CA

2011-09-20

Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

Integrated optical maze

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roos, E.V.; Hendrix, J.L.

1994-06-01

Improvements to Nuclear Weapons Surety through the development of new detonation control techniques incorporating electro-optic technology are reviewed and proposed in this report. The results of the Kansas City Division`s (KCD`s) literature and vendor search, potential system architecture synthesis, and device test results are the basis of this report. This study has revealed several potential reconfigureable optical interconnect architectures that meet Los Alamos National Laboratory`s preliminary performance specifications. Several planer and global architectures have the potential for meeting the Department of Energy`s applications. Preliminary conclusions on the proposed architectures are discussed. The planer approach of monolithic GaAs amplifier switch arraysmore » is the leading candidate because it meets most of the specifications now. LiNbO{sub 3} and LiTaO{sub 3} planer tree switch arrays are the second choice because they meet all the specifications except for laser power transmission. Although not atop choice, acousto-optical free space switch arrays have been considered and meet most of the specifications. Symmetric-Self Electro-Optic Effect Devices (S-SEED) free space switch arrays are being considered and have excellent potential for smart reconfigureable optical interconnects in the future.« less

Simple, monolithic optical element for forward-viewing spectrally encoded endoscopy (Conference Presentation)

NASA Astrophysics Data System (ADS)

Do, Dukho; Kang, Dongkyun; Ikuta, Mitsuhiro; Tearney, Guillermo J.

2016-03-01

Spectrally encoded endoscopy (SEE) is a miniature endoscopic technology that can acquire images of internal organs through a hair-thin probe. While most previously described SEE probes have been side viewing, forward-view (FV)-SEE is advantageous in certain clinical applications as it provides more natural navigation of the probe and has the potential to provide a wider field of view. Prior implementations of FV-SEE used multiple optical elements that increase fabrication complexity and may diminish the robustness of the device. In this paper, we present a new design that uses a monolithic optical element to realize FV-SEE imaging. The optical element is specially designed spacer, fabricated from a 500-μm-glass rod that has a mirror surface on one side and a grating stamped on its distal end. The mirror surface is used to change the incident angle on the grating to diffract the shortest wavelength of the spectrum so that it is parallel to the optical axis. Rotating the SEE optics creates a circular FV-SEE image. Custom-designed software processes FV-SEE images into circular images, which are displayed in real-time. In order to demonstrate this new design, we have constructed the FV-SEE optical element using a 1379 lines/mm diffraction grating. When illuminated with a source with a spectral bandwidth of 420-820 nm, the FV-SEE optical element provides 678 resolvable points per line. The imaging performance of the FV-SEE device was tested by imaging a USAF resolution target. SEE images showed that this new approach generates high quality images in the forward field with a field of view of 58°. Results from this preliminary study demonstrate that we can realize FV-SEE imaging with simple, monolithic, miniature optical element. The characteristics of this FV-SEE configuration will facilitate the development of robust miniature endoscopes for a variety of medical imaging applications.

An 8 Meter Monolithic UV/Optical Space Telescope

NASA Technical Reports Server (NTRS)

Stahl, H. Philip; Postman, Marc

2008-01-01

The planned Ares V launch vehicle with its 10 meter fairing and at least 55,600 kg capacity to Earth Sun L2 enables entirely new classes of space telescopes. A consortium from NASA, Space Telescope Science Institute, and aerospace industry are studying an 8-meter monolithic primary mirror UV/optical/NIR space telescope to enable new astrophysical research that is not feasible with existing or near-term missions, either space or ground. This paper briefly reviews the science case for such a mission and presents the results of an on-going technical feasibility study, including: optical design; structural design/analysis including primary mirror support structure, sun shade and secondary mirror support structure; thermal analysis; launch vehicle performance and trajectory; spacecraft including structure, propulsion, GN&C, avionics, power systems and reaction wheels; operations & servicing; mass budget and cost.

Foldable and Cytocompatible Sol-gel TiO2 Photonics

NASA Astrophysics Data System (ADS)

Li, Lan; Zhang, Ping; Wang, Wei-Ming; Lin, Hongtao; Zerdoum, Aidan B.; Geiger, Sarah J.; Liu, Yangchen; Xiao, Nicholas; Zou, Yi; Ogbuu, Okechukwu; Du, Qingyang; Jia, Xinqiao; Li, Jingjing; Hu, Juejun

2015-09-01

Integrated photonics provides a miniaturized and potentially implantable platform to manipulate and enhance the interactions between light and biological molecules or tissues in in-vitro and in-vivo settings, and is thus being increasingly adopted in a wide cross-section of biomedical applications ranging from disease diagnosis to optogenetic neuromodulation. However, the mechanical rigidity of substrates traditionally used for photonic integration is fundamentally incompatible with soft biological tissues. Cytotoxicity of materials and chemicals used in photonic device processing imposes another constraint towards these biophotonic applications. Here we present thin film TiO2 as a viable material for biocompatible and flexible integrated photonics. Amorphous TiO2 films were deposited using a low temperature (<250 °C) sol-gel process fully compatible with monolithic integration on plastic substrates. High-index-contrast flexible optical waveguides and resonators were fabricated using the sol-gel TiO2 material, and resonator quality factors up to 20,000 were measured. Following a multi-neutral-axis mechanical design, these devices exhibit remarkable mechanical flexibility, and can sustain repeated folding without compromising their optical performance. Finally, we validated the low cytotoxicity of the sol-gel TiO2 devices through in-vitro cell culture tests. These results demonstrate the potential of sol-gel TiO2 as a promising material platform for novel biophotonic devices.

Foldable and Cytocompatible Sol-gel TiO2 Photonics

PubMed Central

Li, Lan; Zhang, Ping; Wang, Wei-Ming; Lin, Hongtao; Zerdoum, Aidan B.; Geiger, Sarah J.; Liu, Yangchen; Xiao, Nicholas; Zou, Yi; Ogbuu, Okechukwu; Du, Qingyang; Jia, Xinqiao; Li, Jingjing; Hu, Juejun

2015-01-01

Integrated photonics provides a miniaturized and potentially implantable platform to manipulate and enhance the interactions between light and biological molecules or tissues in in-vitro and in-vivo settings, and is thus being increasingly adopted in a wide cross-section of biomedical applications ranging from disease diagnosis to optogenetic neuromodulation. However, the mechanical rigidity of substrates traditionally used for photonic integration is fundamentally incompatible with soft biological tissues. Cytotoxicity of materials and chemicals used in photonic device processing imposes another constraint towards these biophotonic applications. Here we present thin film TiO2 as a viable material for biocompatible and flexible integrated photonics. Amorphous TiO2 films were deposited using a low temperature (<250 °C) sol-gel process fully compatible with monolithic integration on plastic substrates. High-index-contrast flexible optical waveguides and resonators were fabricated using the sol-gel TiO2 material, and resonator quality factors up to 20,000 were measured. Following a multi-neutral-axis mechanical design, these devices exhibit remarkable mechanical flexibility, and can sustain repeated folding without compromising their optical performance. Finally, we validated the low cytotoxicity of the sol-gel TiO2 devices through in-vitro cell culture tests. These results demonstrate the potential of sol-gel TiO2 as a promising material platform for novel biophotonic devices. PMID:26344823

Foldable and Cytocompatible Sol-gel TiO2 Photonics.

PubMed

Li, Lan; Zhang, Ping; Wang, Wei-Ming; Lin, Hongtao; Zerdoum, Aidan B; Geiger, Sarah J; Liu, Yangchen; Xiao, Nicholas; Zou, Yi; Ogbuu, Okechukwu; Du, Qingyang; Jia, Xinqiao; Li, Jingjing; Hu, Juejun

2015-09-07

Integrated photonics provides a miniaturized and potentially implantable platform to manipulate and enhance the interactions between light and biological molecules or tissues in in-vitro and in-vivo settings, and is thus being increasingly adopted in a wide cross-section of biomedical applications ranging from disease diagnosis to optogenetic neuromodulation. However, the mechanical rigidity of substrates traditionally used for photonic integration is fundamentally incompatible with soft biological tissues. Cytotoxicity of materials and chemicals used in photonic device processing imposes another constraint towards these biophotonic applications. Here we present thin film TiO2 as a viable material for biocompatible and flexible integrated photonics. Amorphous TiO2 films were deposited using a low temperature (<250 °C) sol-gel process fully compatible with monolithic integration on plastic substrates. High-index-contrast flexible optical waveguides and resonators were fabricated using the sol-gel TiO2 material, and resonator quality factors up to 20,000 were measured. Following a multi-neutral-axis mechanical design, these devices exhibit remarkable mechanical flexibility, and can sustain repeated folding without compromising their optical performance. Finally, we validated the low cytotoxicity of the sol-gel TiO2 devices through in-vitro cell culture tests. These results demonstrate the potential of sol-gel TiO2 as a promising material platform for novel biophotonic devices.

On chip preconcentration and fluorescence labeling of model proteins by use of monolithic columns: device fabrication, optimization, and automation.

PubMed

Yang, Rui; Pagaduan, Jayson V; Yu, Ming; Woolley, Adam T

2015-01-01

Microfluidic systems with monolithic columns have been developed for preconcentration and on-chip labeling of model proteins. Monoliths were prepared in microchannels by photopolymerization, and their properties were optimized by varying the composition and concentration of the monomers to improve flow and extraction. On-chip labeling of proteins was achieved by driving solutions through the monolith by use of voltage then incubating fluorescent dye with protein retained on the monolith. Subsequently, the labeled proteins were eluted, by applying voltages to reservoirs on the microdevice, and then detected, by monitoring laser-induced fluorescence. Monoliths prepared from octyl methacrylate combine the best protein retention with the possibility of separate elution of unattached fluorescent label with 50% acetonitrile. Finally, automated on-chip extraction and fluorescence labeling of a model protein were successfully demonstrated. This method involves facile sample pretreatment, and therefore has potential for production of integrated bioanalysis microchips.

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

1994-01-01

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

High-performance silicon photonics technology for telecommunications applications.

PubMed

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

High-performance silicon photonics technology for telecommunications applications

PubMed Central

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-01-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. PMID:27877659

Monolithic integration of an InP-based 4 × 25 GHz photodiode array to an O-band arrayed waveguide grating demultiplexer

NASA Astrophysics Data System (ADS)

Ye, Han; Han, Qin; Lv, Qianqian; Pan, Pan; An, Junming; Yang, Xiaohong

2017-12-01

We demonstrate the monolithic integration of a uni-traveling carrier photodiode array with a 4 channel, O-band arrayed waveguide grating demultiplexer on the InP platform by the selective area growth technique. An extended coupling layer at the butt-joint is adopted to ensure both good fabrication compatibility and high photodiode quantum efficiency of 77%. The fabricated integrated chip exhibits a uniform bandwidth over 25 GHz for each channel and a crosstalk below -22 dB.

Space Power Amplification with Active Linearly Tapered Slot Antenna Array

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Lee, Richard Q.

1993-01-01

A space power amplifier composed of active linearly tapered slot antennas (LTSA's) has been demonstrated and shown to have a gain of 30 dB at 20 GHz. In each of the antenna elements, a GaAs monolithic microwave integrated circuit (MMIC) three-stage power amplifier is integrated with two LTSA's. The LTSA and the MMIC power amplifier has a gain of 11 dB and power added efficiency of 14 percent respectively. The design is suitable for constructing a large array using monolithic integration techniques.

High-performance silicon photonics technology for telecommunications applications

NASA Astrophysics Data System (ADS)

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

Optical design of the PEPSI high-resolution spectrograph at LBT

NASA Astrophysics Data System (ADS)

Andersen, Michael I.; Spano, Paolo; Woche, Manfred; Strassmeier, Klaus G.; Beckert, Erik

2004-09-01

PEPSI is a high-resolution, fiber fed echelle spectrograph with polarimetric capabilities for the LBT. In order to reach a maximum resolution R=120.000 in polarimetric mode and 300.000 in integral light mode with high efficiency in the spectral range 390-1050~nm, we designed a white-pupil configuration with Maksutov collimators. Light is dispersed by an R4 31.6 lines/mm monolithic echelle grating mosaic and split into two arms through dichroics. The two arms, optimized for the spectral range 390-550~nm and 550-1050~nm, respectively, consist of Maksutov transfer collimators, VPH-grism cross dispersers, optimized dioptric cameras and 7.5K x 7.5K 8~μ CCDs. Fibers of different core sizes coupled to different image-slicers allow a high throughput, comparable to that of direct feed instruments. The optical configuration with only spherical and cylindrical surfaces, except for one aspherical surface in each camera, reduces costs and guarantees high optical quality. PEPSI is under construction at AIP with first light expected in 2006.

Quantum communications system with integrated photonic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nordholt, Jane E.; Peterson, Charles Glen; Newell, Raymond Thorson

Security is increased in quantum communication (QC) systems lacking a true single-photon laser source by encoding a transmitted optical signal with two or more decoy-states. A variable attenuator or amplitude modulator randomly imposes average photon values onto the optical signal based on data input and the predetermined decoy-states. By measuring and comparing photon distributions for a received QC signal, a single-photon transmittance is estimated. Fiber birefringence is compensated by applying polarization modulation. A transmitter can be configured to transmit in conjugate polarization bases whose states of polarization (SOPs) can be represented as equidistant points on a great circle on themore » Poincare sphere so that the received SOPs are mapped to equidistant points on a great circle and routed to corresponding detectors. Transmitters are implemented in quantum communication cards and can be assembled from micro-optical components, or transmitter components can be fabricated as part of a monolithic or hybrid chip-scale circuit.« less

Monolithic microwave integrated circuit technology for advanced space communication

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Romanofsky, Robert R.

1988-01-01

Future Space Communications subsystems will utilize GaAs Monolithic Microwave Integrated Circuits (MMIC's) to reduce volume, weight, and cost and to enhance system reliability. Recent advances in GaAs MMIC technology have led to high-performance devices which show promise for insertion into these next generation systems. The status and development of a number of these devices operating from Ku through Ka band will be discussed along with anticipated potential applications.

SU8 diaphragm micropump with monolithically integrated cantilever check valves.

PubMed

Ezkerra, Aitor; Fernández, Luis José; Mayora, Kepa; Ruano-López, Jesús Miguel

2011-10-07

This paper presents a SU8 unidirectional diaphragm micropump with embedded out-of-plane cantilever check valves. The device represents a reliable and low-cost solution for integration of microfluidic control in lab-on-a-chip devices. Its planar architecture allows monolithic definition of its components in a single step and potential integration with previously reported PCR, electrophoresis and flow-sensing SU8 microdevices. Pneumatic actuation is applied on a PDMS diaphragm, which is bonded to the SU8 body at wafer level, further enhancing its integration and mass production capabilities. The cantilever check valves move synchronously with the diaphragm, feature fast response (10ms), low dead volume (86nl) and a 94% flow blockage up to 300kPa. The micropump achieves a maximum flow rate of 177 μl min(-1) at 6 Hz and 200 kPa with an effective area of 10 mm(2). The device is reliable, self-priming and tolerant to particles and big bubbles. To the knowledge of the authors, this is the first micropump in SU8 with monolithically integrated cantilever check valves.

Design Study of 8 Meter Monolithic Mirror UV/Optical Space Telescope

NASA Technical Reports Server (NTRS)

Stahl, H. Philip

2008-01-01

The planned Ares V launch vehicle with its 10 meter fairing shroud and 55,000 kg capacity to the Sun Earth L2 point enables entirely new classes of space telescopes. NASA MSFC has conducted a preliminary study that demonstrates the feasibility of launching a 6 to 8 meter class monolithic primary mirror telescope to Sun-Earth L2 using an Ares V. Specific technical areas studied included optical design; structural design/analysis including primary mirror support structure, sun shade and secondary mirror support structure; thermal analysis; launch vehicle performance and trajectory; spacecraft including structure, propulsion, GN&C, avionics, power systems and reaction wheels; operations and servicing; mass and power budgets; and system cost.

Monolithic multi-color light emission/detection device

DOEpatents

Wanlass, M.W.

1995-02-21

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber. 5 figs.

Monolithically Integrated SiGe/Si PIN-HBT Front-End Transimpedance Photoreceivers

NASA Technical Reports Server (NTRS)

Rieh, J.-S.; Qasaimeh, O.; Klotzkin, D.; Lu, L.-H.; Katehi, L. P. B.; Yang, K.; Bhattacharya, P.; Croke, E. T.

1997-01-01

The demand for monolithically integrated photoreceivers based on Si-based technology keeps increasing as low cost and high reliability products are required for the expanding commercial market. Higher speed and wider operating frequency range are expected when SiGe/Si heterojunction is introduced to the circuit design. In this paper, a monolithic SiGe/Si PIN-HBT front-end transimpedance photoreceiver is demonstrated for the first time. For this purpose, mesa-type SiGe/Si PIN-HBT technology was developed. Fabricated HBTs exhibit f(sub max) of 34 GHz with DC gain of 25. SiGe/Si PIN photodiodes, which share base and collector layers of HBTs, demonstrate responsivity of 0.3 A/W at lambda=850 nm and bandwidth of 450 MHz. Based on these devices, single- and dual-feedback transimpedance amplifiers were fabricated and they exhibited the bandwidth of 3.2 GHz and 3.3 GHz with the transimpedance gain of 45.2 dB(Omega) and 47.4 dB(Omega) respectively. Monolithically integrated single-feedback PIN-HBT photoreceivers were implemented and the bandwidth was measured to be approx. 0.5 GHz, which is limited by the bandwidth of PIN photodiodes.

Low-loss interference filter arrays made by plasma-assisted reactive magnetron sputtering (PARMS) for high-performance multispectral imaging

NASA Astrophysics Data System (ADS)

Broßmann, Jan; Best, Thorsten; Bauer, Thomas; Jakobs, Stefan; Eisenhammer, Thomas

2016-10-01

Optical remote sensing of the earth from air and space typically utilizes several channels in the visible and near infrared spectrum. Thin-film optical interference filters, mostly of narrow bandpass type, are applied to select these channels. The filters are arranged in filter wheels, arrays of discrete stripe filters mounted in frames, or patterned arrays on a monolithic substrate. Such multi-channel filter assemblies can be mounted close to the detector, which allows a compact and lightweight camera design. Recent progress in image resolution and sensor sensitivity requires improvements of the optical filter performance. Higher demands placed on blocking in the UV and NIR and in between the spectral channels, in-band transmission and filter edge steepness as well as scattering lead to more complex filter coatings with thicknesses in the range of 10 - 25μm. Technological limits of the conventionally used ion-assisted evaporation process (IAD) can be overcome only by more precise and higher-energetic coating technologies like plasma-assisted reactive magnetron sputtering (PARMS) in combination with optical broadband monitoring. Optics Balzers has developed a photolithographic patterning process for coating thicknesses up to 15μm that is fully compatible with the advanced PARMS coating technology. This provides the possibility of depositing multiple complex high-performance filters on a monolithic substrate. We present an overview of the performance of recently developed filters with improved spectral performance designed for both monolithic filter-arrays and stripe filters mounted in frames. The pros and cons as well as the resulting limits of the filter designs for both configurations are discussed.

CMOS integrated avalanche photodiodes and frequency-mixing optical sensor front end for portable NIR spectroscopy instruments.

PubMed

Yun, Ruida; Sthalekar, Chirag; Joyner, Valencia M

2011-01-01

This paper presents the design and measurement results of two avalanche photodiode structures (APDs) and a novel frequency-mixing transimpedance amplifier (TIA), which are key building blocks towards a monolithically integrated optical sensor front end for near-infrared (NIR) spectroscopy applications. Two different APD structures are fabricated in an unmodified 0.18 \\im CMOS process, one with a shallow trench isolation (STI) guard ring and the other with a P-well guard ring. The APDs are characterized in linear mode. The STI bounded APD demonstrates better performance and exhibits 3.78 A/W responsivity at a wavelength of 690 nm and bias voltage of 10.55 V. The frequency-mixing TIA (FM-TIA) employs a T-feedback network incorporating gate-controlled transistors for resistance modulation, enabling the simultaneous down-conversion and amplification of the high frequency modulated photodiode (PD) current. The TIA achieves 92 dS Ω conversion gain with 0.5 V modulating voltage. The measured IIP(3) is 10.6/M. The amplifier together with the 50 Ω output buffer draws 23 mA from a1.8 V power supply.

1.31-1.55-µm Hybrid integrated optoelectronic receiver using low-loss quasi-monolithic integration technology

NASA Astrophysics Data System (ADS)

Luo, Yang; Huang, Yongqing; Ren, Xiaomin; Duan, Xiaofeng; Wang, Qi

2014-01-01

In order to integrate photonic devices with electronic devices to realize the low-loss hybrid integrated devices. A wide spectral hybrid integrated optoelectronic receiver was fabricated by using quasi-monolithic integration technology (QMIT) in this paper. It consisted of a 8.5 GHz InGaAs photodetector and a 1.25 Gbps mature transimpedance pre-amplifier (TIA) complementrary metal oxide semiconductor (CMOS) chip. The Au layer was deposited on a designed Si platform to form planar waveguide electrode which replaced a part of bonding wire, so it reduced the parasitic parameters of the optoelectronic receiver, and then enhanced high-speed response characteristics and the stability of the hybrid integrated receiver. Finally, a 3 Gbps clear open eye diagram of the hybrid integrated optoelectronic receiver was obtained.

Monolithically integrated bacteriorhodopsin/semiconductor opto-electronic integrated circuit for a bio-photoreceiver.

PubMed

Xu, J; Bhattacharya, P; Váró, G

2004-03-15

The light-sensitive protein, bacteriorhodopsin (BR), is monolithically integrated with an InP-based amplifier circuit to realize a novel opto-electronic integrated circuit (OEIC) which performs as a high-speed photoreceiver. The circuit is realized by epitaxial growth of the field-effect transistors, currently used semiconductor device and circuit fabrication techniques, and selective area BR electro-deposition. The integrated photoreceiver has a responsivity of 175 V/W and linear photoresponse, with a dynamic range of 16 dB, with 594 nm photoexcitation. The dynamics of the photochemical cycle of BR has also been modeled and a proposed equivalent circuit simulates the measured BR photoresponse with good agreement.

Demonstration of a Monolithic Micro-Spectrometer System

NASA Technical Reports Server (NTRS)

Rajic, S.; Egert, C. M.

1995-01-01

The starting design of a spectrometer based on a modified Czerny-Turner configuration containing five precision surfaces encapsulated in a monolithic structure is described. Since the purpose at the early stages of the development was to demonstrate the feasibility of the technology and not an attempt to address a specific sensing problem, the first substrate material chosen was optical quality polymethyl methacrylate (PMMA). The final system design decision was narrowed down to two possible configurations containing five and six precision surfaces. The five surface design was chosen since it contained one less precision optical surface, yet included multiple off-axis spheres. In this particular design and material system, the mass was kept below 7 g. The wavelength range (bandpass) design goal was 1 micrometer (0.6 - 1.6 micrometers). The PMMA is particularly transparent in this wavelength region and there are interesting effects to monitor within this band. The optical system was designed and optimized using the ZEMAX optical design software program to be entirely alignment free (self aligning).

Integrated bio-fluorescence sensor.

PubMed

Thrush, Evan; Levi, Ofer; Ha, Wonill; Wang, Ke; Smith, Stephen J; Harris, James S

2003-09-26

Due to the recent explosion in optoelectronics for telecommunication applications, novel optoelectronic sensing structures can now be realized. In this work, we explore the integration of optoelectronic components towards miniature and portable fluorescence sensors. The integration of these micro-fabricated sensors with microfluidics and capillary networks may reduce the cost and complexity of current research instruments and open up a world of new applications in portable biological analysis systems. A novel optoelectronic design that capitalizes on current vertical-cavity surface-emitting laser (VCSEL) technology is explored. Specifically, VCSELs, optical emission filters and PIN photodetectors are fabricated as part of a monolithically integrated near-infrared fluorescence detection system. High-performance lasers and photodetectors have been characterized and integrated to form a complete sensor. Experimental results show that sensor sensitivity is limited by laser background. The laser background is caused by spontaneous emission emitted from the side of the VCSEL excitation source. Laser background will limit sensitivity in most integrated sensing designs due to locating excitation sources and photodetectors in such close proximity, and methods are proposed to reduce the laser background in such designs so that practical fluorescent detection limits can be achieved.

Design for an 8 Meter Monolithic UV/OIR Space Telescope

NASA Technical Reports Server (NTRS)

Stahl, H. Philip; Postman, Marc; Hornsby, Linda; Hopkins, Randall; Mosier, Gary E.; Pasquale, Bert A.; Arnold, William R.

2009-01-01

ATLAST-8 is an 8-meter monolithic UV/optical/NIR space observatory to be placed in orbit at Sun-Earth L2 by NASA's planned Ares V cargo launch vehicle. The ATLAST-8 will yield fundamental astronomical breakthroughs. The mission concept utilizes two enabling technologies: planned Ares-V launch vehicle (scheduled for 2019) and autonomous rendezvous and docking (AR&D). The unprecedented Ares-V payload and mass capacity enables the use of a massive, monolithic, thin-meniscus primary mirror - similar to a VLT or Subaru. Furthermore, it enables simple robust design rules to mitigate cost, schedule and performance risk. AR&D enables on-orbit servicing, extending mission life and enhancing science return.

Miniature high-performance infrared spectrometer for space applications

NASA Astrophysics Data System (ADS)

Kruzelecky, Roman V.; Haddad, Emile; Wong, Brian; Lafrance, Denis; Jamroz, Wes; Ghosh, Asoke K.; Zheng, Wanping; Phong, Linh

2004-06-01

Infrared spectroscopy probes the characteristic vibrational and rotational modes of chemical bonds in molecules to provide information about both the chemical composition and the bonding configuration of a sample. The significant advantage of the Infrared spectral technique is that it can be used with minimal consumables to simultaneously detect a large variety of chemical and biochemical species with high chemical specificity. To date, relatively large Fourier Transform (FT-IR) spectrometers employing variations of the Michelson interferometer have been successfully employed in space for various IR spectroscopy applications. However, FT-IR systems are mechanically complex, bulky (> 15 kg), and require considerable processing. This paper discusses the use of advanced integrated optics and smart optical coding techniques to significantly extend the performance of miniature IR spectrometers by several orders of magnitude in sensitivity. This can provide the next-generation of compact, high-performance IR spectrometers with monolithically integrated optical systems for robust optical alignment. The entire module can weigh under 3 kg to minimize the mass penalty for space applications. Miniaturized IR spectrometers are versatile and very convenient for small and micro satellite based missions. They can be dedicated to the monitoring of the CO2 in an Earth Observation mission, to Mars exobiology exploration, as well as to vital life support in manned space system; such as the cabin air quality and the quality of the recycled water supply.

Miniature high-performance infrared spectrometer for space applications

NASA Astrophysics Data System (ADS)

Kruzelecky, Roman V.; Haddad, Emile; Wong, Brian; Lafrance, Denis; Jamroz, Wes; Ghosh, Asoke K.; Zheng, Wanping; Phong, Linh

2017-11-01

Infrared spectroscopy probes the characteristic vibrational and rotational modes of chemical bonds in molecules to provide information about both the chemical composition and the bonding configuration of a sample. The significant advantage of the Infrared spectral technique is that it can be used with minimal consumables to simultaneously detect a large variety of chemical and biochemical species with high chemical specificity. To date, relatively large Fourier Transform (FT-IR) spectrometers employing variations of the Michelson interferometer have been successfully employed in space for various IR spectroscopy applications. However, FT-IR systems are mechanically complex, bulky (> 15 kg), and require considerable processing. This paper discusses the use of advanced integrated optics and smart optical coding techniques to significantly extend the performance of miniature IR spectrometers by several orders of magnitude in sensitivity. This can provide the next generation of compact, high-performance IR spectrometers with monolithically integrated optical systems for robust optical alignment. The entire module can weigh under 3 kg to minimize the mass penalty for space applications. Miniaturized IR spectrometers are versatile and very convenient for small and micro satellite based missions. They can be dedicated to the monitoring of the CO2 in an Earth Observation mission, to Mars exobiology exploration, as well as to vital life support in manned space system; such as the cabin air quality and the quality of the recycled water supply.

Optical and optomechanical ultralightweight C/SiC components

NASA Astrophysics Data System (ADS)

Papenburg, Ulrich; Pfrang, Wilhelm; Kutter, G. S.; Mueller, Claus E.; Kunkel, Bernd P.; Deyerler, Michael; Bauereisen, Stefan

1999-11-01

Optical and optomechanical structures based on silicon carbide (SiC) ceramics are becoming increasingly important for ultra- lightweight optical systems that must work in adverse environments. At IABG and Dornier Satellite Systems (DSS) in Munich, a special form of SiC ceramics carbon fiber reinforced silicon carbide (C/SiCR) has been developed partly under ESA and NASA contracts. C/SiCR is a light-weight, high- strength engineering material that features tunable mechanical and thermal properties. It offers exceptional design freedom due to its reduced brittleness and negligible volume shrinkage during processing in comparison to traditional, powder-based ceramics. Furthermore, its rapid fabrication process produces near-net-shape components using conventional NC machining/milling equipment and, thus, provides substantial schedule, cost, and risk savings. These characteristics allow C/SiCR to overcome many of the problems associated with more traditional optical materials. To date, C/SiCR has been used to produce ultra-lightweight mirrors and reflectors, antennas, optical benches, and monolithic and integrated reference structures for a variety of space and terrestrial applications. This paper describes the material properties, optical system and structural design aspects, the forming and manufacturing process including high-temperature joining technology, precision grinding and cladding techniques, and the performance results of a number of C/SiCR optical components we have built.

Interferometric fiber optic displacement sensor

DOEpatents

Farah, J.

1999-04-06

A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically. 23 figs.

Interferometric fiber optic displacement sensor

DOEpatents

Farah, J.

1995-05-30

A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically. 29 figs.

Interferometric fiber optic displacement sensor

DOEpatents

Farah, John

1995-01-01

A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically.

Interferometric fiber optic displacement sensor

DOEpatents

Farah, John

1999-01-01

A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically.

Efficient nonlinear optical conversion of 1.319-micron laser radiation

NASA Astrophysics Data System (ADS)

Byer, Robert L.; Eckardt, Robert C.

1993-01-01

The accomplishments of this program are in the development and application of periodically poled nonlinear optical materials for nonlinear frequency-conversion. We have demonstrated the use of periodically poled lithium niobate (PPLN) as a bulk material for external resonant cavity second-harmonic generation with continuous-wave (cw) output power of 1.7 W. Work that is following this investigation is showing that planar waveguides of PPLN may well be the most satisfactory method of generation of 10's of mW of the 659-nm harmonic of the 1.32-micrometer Nd:YAG laser. We encountered major obstacles obtaining multilayer dielectric coatings necessary to pursue our proposed design of monolithic bulk optical harmonic generators. Additional alternative approaches such as discrete component resonant second harmonic generation employing single domain and periodically poled bulk crystals and monolithic single domain resonators formed by total internal reflection remain under investigation.

Inherent polarization entanglement generated from a monolithic semiconductor chip

PubMed Central

Horn, Rolf T.; Kolenderski, Piotr; Kang, Dongpeng; Abolghasem, Payam; Scarcella, Carmelo; Frera, Adriano Della; Tosi, Alberto; Helt, Lukas G.; Zhukovsky, Sergei V.; Sipe, J. E.; Weihs, Gregor; Helmy, Amr S.; Jennewein, Thomas

2013-01-01

Creating miniature chip scale implementations of optical quantum information protocols is a dream for many in the quantum optics community. This is largely because of the promise of stability and scalability. Here we present a monolithically integratable chip architecture upon which is built a photonic device primitive called a Bragg reflection waveguide (BRW). Implemented in gallium arsenide, we show that, via the process of spontaneous parametric down conversion, the BRW is capable of directly producing polarization entangled photons without additional path difference compensation, spectral filtering or post-selection. After splitting the twin-photons immediately after they emerge from the chip, we perform a variety of correlation tests on the photon pairs and show non-classical behaviour in their polarization. Combined with the BRW's versatile architecture our results signify the BRW design as a serious contender on which to build large scale implementations of optical quantum processing devices. PMID:23896982

A monolithic glass chip for active single-cell sorting based on mechanical phenotyping.

PubMed

Faigle, Christoph; Lautenschläger, Franziska; Whyte, Graeme; Homewood, Philip; Martín-Badosa, Estela; Guck, Jochen

2015-03-07

The mechanical properties of biological cells have long been considered as inherent markers of biological function and disease. However, the screening and active sorting of heterogeneous populations based on serial single-cell mechanical measurements has not been demonstrated. Here we present a novel monolithic glass chip for combined fluorescence detection and mechanical phenotyping using an optical stretcher. A new design and manufacturing process, involving the bonding of two asymmetrically etched glass plates, combines exact optical fiber alignment, low laser damage threshold and high imaging quality with the possibility of several microfluidic inlet and outlet channels. We show the utility of such a custom-built optical stretcher glass chip by measuring and sorting single cells in a heterogeneous population based on their different mechanical properties and verify sorting accuracy by simultaneous fluorescence detection. This offers new possibilities of exact characterization and sorting of small populations based on rheological properties for biological and biomedical applications.

Anapole nanolasers for mode-locking and ultrafast pulse generation

PubMed Central

Totero Gongora, Juan S.; Miroshnichenko, Andrey E.; Kivshar, Yuri S.; Fratalocchi, Andrea

2017-01-01

Nanophotonics is a rapidly developing field of research with many suggestions for a design of nanoantennas, sensors and miniature metadevices. Despite many proposals for passive nanophotonic devices, the efficient coupling of light to nanoscale optical structures remains a major challenge. In this article, we propose a nanoscale laser based on a tightly confined anapole mode. By harnessing the non-radiating nature of the anapole state, we show how to engineer nanolasers based on InGaAs nanodisks as on-chip sources with unique optical properties. Leveraging on the near-field character of anapole modes, we demonstrate a spontaneously polarized nanolaser able to couple light into waveguide channels with four orders of magnitude intensity than classical nanolasers, as well as the generation of ultrafast (of 100 fs) pulses via spontaneous mode locking of several anapoles. Anapole nanolasers offer an attractive platform for monolithically integrated, silicon photonics sources for advanced and efficient nanoscale circuitry. PMID:28561017

High-speed photodiodes for InP-based photonic integrated circuits.

PubMed

Rouvalis, E; Chtioui, M; Tran, M; Lelarge, F; van Dijk, F; Fice, M J; Renaud, C C; Carpintero, G; Seeds, A J

2012-04-09

We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).

Optical Correlation Seeker.

DTIC Science & Technology

1980-05-05

not include noncoherent imaging optics 15 .-1 - Figure 13 shows a correlator design contained within a transparent solid. This monolithic...HARTMAN UNCLASSIFIED DRSMI/RR-SO-A-TR SBIE-AD-E950 083 N MMI LEYEL~ TECHNICAL REPORT RR-80-4 1l OPTICAL CORRELATION SEEKER Charles R. Christensen Richard L...Report RR-80-4 ! 4. TITLE (end Subtitle) S. TYPE OF REPORT & PERIOD COVERED OPTICAL CORRELATION SEEKER 6. PERFORMING ORG. REPORT NUMBER 7. AUTHOR(.) 8

Advanced Mirror & Modelling Technology Development

NASA Technical Reports Server (NTRS)

Effinger, Michael; Stahl, H. Philip; Abplanalp, Laura; Maffett, Steven; Egerman, Robert; Eng, Ron; Arnold, William; Mosier, Gary; Blaurock, Carl

2014-01-01

The 2020 Decadal technology survey is starting in 2018. Technology on the shelf at that time will help guide selection to future low risk and low cost missions. The Advanced Mirror Technology Development (AMTD) team has identified development priorities based on science goals and engineering requirements for Ultraviolet Optical near-Infrared (UVOIR) missions in order to contribute to the selection process. One key development identified was lightweight mirror fabrication and testing. A monolithic, stacked, deep core mirror was fused and replicated twice to achieve the desired radius of curvature. It was subsequently successfully polished and tested. A recently awarded second phase to the AMTD project will develop larger mirrors to demonstrate the lateral scaling of the deep core mirror technology. Another key development was rapid modeling for the mirror. One model focused on generating optical and structural model results in minutes instead of months. Many variables could be accounted for regarding the core, face plate and back structure details. A portion of a spacecraft model was also developed. The spacecraft model incorporated direct integration to transform optical path difference to Point Spread Function (PSF) and between PSF to modulation transfer function. The second phase to the project will take the results of the rapid mirror modeler and integrate them into the rapid spacecraft modeler.

Monolithic tandem solar cell

DOEpatents

Wanlass, M.W.

1994-06-21

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. 9 figs.

Monolithic tandem solar cell

DOEpatents

Wanlass, Mark W.

1994-01-01

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched.

Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-throughput rate transceiver. M.S. Thesis

NASA Technical Reports Server (NTRS)

Kot, R. A.; Oliver, J. D.; Wilson, S. G.

1984-01-01

A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver.

Monolithic microwave integrated circuits: Interconnections and packaging considerations

NASA Astrophysics Data System (ADS)

Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.

Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

Monolithic microwave integrated circuits: Interconnections and packaging considerations

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.

1984-01-01

Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor

NASA Technical Reports Server (NTRS)

Bar-Chaim, N.; Harder, CH.; Margalit, S.; Yariv, A.; Katz, J.; Ury, I.

1982-01-01

A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100-400 and light responsitivity of 75 A/W (for wavelengths of 0.82 micron) at collector current levels of 15 mA were obtained.

Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

DOEpatents

Skogen, Erik J.

2016-10-25

The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.

Fiber-Coupled Planar Light-Wave Circuit for Seed Laser Control in High Spectral Resolution Lidar Systems

NASA Technical Reports Server (NTRS)

Cook, Anthony; McNeil, Shirley; Switzer, Gregg; Battle, Philip

2010-01-01

Precise laser remote sensing of aerosol extinction and backscatter in the atmosphere requires a high-power, pulsed, frequency doubled Nd:YAG laser that is wavelength- stabilized to a narrow absorption line such as found in iodine vapor. One method for precise wavelength control is to injection seed the Nd:YAG laser with a low-power CW laser that is stabilized by frequency converting a fraction of the beam to 532 nm, and to actively frequency-lock it to an iodine vapor absorption line. While the feasibility of this approach has been demonstrated using bulk optics in NASA Langley s Airborne High Spectral Resolution Lidar (HSRL) program, an ideal, lower cost solution is to develop an all-waveguide, frequency-locked seed laser in a compact, robust package that will withstand the temperature, shock, and vibration levels associated with airborne and space-based remote sensing platforms. A key technology leading to this miniaturization is the integration of an efficient waveguide frequency doubling element, and a low-voltage phase modulation element into a single, monolithic, planar light-wave circuit (PLC). The PLC concept advances NASA's future lidar systems due to its compact, efficient and reliable design, thus enabling use on small aircraft and satellites. The immediate application for this technology is targeted for NASA Langley's HSRL system for aerosol and cloud characterization. This Phase I effort proposes the development of a potassium titanyl phosphate (KTP) waveguide phase modulator for future integration into a PLC. For this innovation, the proposed device is the integration of a waveguide-based frequency doubler and phase modulator in a single, fiber pigtail device that will be capable of efficient second harmonic generation of 1,064-nm light and subsequent phase modulation of the 532 nm light at 250 MHz, providing a properly spectrally formatted beam for HSRL s seed laser locking system. Fabrication of the integrated PLC chip for NASA Langley, planned for the Phase II effort, will require full integration and optimization of the waveguide components (SHG waveguide, splitters, and phase modulator) onto a single, monolithic device. The PLC will greatly reduce the size and weight, improve electrical- to-optical efficiency, and significantly reduce the cost of NASA Langley s current stabilized HSRL seed laser system built around a commercial off-the-shelf seed laser that is free-space coupled to a bulk doubler and bulk phase modulator.

The preparation method of terahertz monolithic integrated device

NASA Astrophysics Data System (ADS)

Zhang, Cong; Su, Bo; He, Jingsuo; Zhang, Hongfei; Wu, Yaxiong; Zhang, Shengbo; Zhang, Cunlin

2018-01-01

The terahertz monolithic integrated device is to integrate the pumping area of the terahertz generation, the detection area of the terahertz receiving and the metal waveguide of terahertz transmission on the same substrate. The terahertz generation and detection device use a photoconductive antenna structure the metal waveguide use a microstrip line structure. The evanescent terahertz-bandwidth electric field extending above the terahertz transmission line interacts with, and is modified by, overlaid dielectric samples, thus enabling the characteristic vibrational absorption resonances in the sample to be probed. In this device structure, since the semiconductor substrate of the photoconductive antenna is located between the strip conductor and the dielectric layer of the microstrip line, and the semiconductor substrate cannot grow on the dielectric layer directly. So how to prepare the semiconductor substrate of the photoconductive antenna and how to bond the semiconductor substrate to the dielectric layer of the microstrip line is a key step in the terahertz monolithic integrated device. In order to solve this critical problem, the epitaxial wafer structure of the two semiconductor substrates is given and transferred to the desired substrate by two methods, respectively.

Measuring THz QCL feedback using an integrated monolithic transceiver.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wanke, Michael Clement

2010-08-01

THz quantum cascade lasers are of interest for use as solid-state local-oscillators in THz heterodyne receiver systems, especially for frequencies exceeding 2 THz and for use with non-cryogenic mixers which require mW power levels. Among other criteria, to be a good local oscillator, the laser must have a narrow linewidth and excellent frequency stability. Recent phase locking measurements of THz QCLs to high harmonics of microwave frequency reference sources as high as 2.7 THz demonstrate that the linewidth and frequency stability of QCLs can be more than adequate. Most reported THz receivers employing QCLs have used discrete source and detectormore » components coupled via mechanically aligned free-space quasioptics. Unfortunately, retroreflections of the laser off of the detecting element can lead to deleterious feedback effects. Using a monolithically integrated transceiver with a Schottky diode monolithically integrated into a THz QCL, we have begun to explore the sensitivity of the laser performance to feedback due to retroreflections of the THz laser radiation. The transceiver allows us to monitor the beat frequency between internal Fabry-Perot modes of the QCL or between a QCL mode and external radiation incident on the transceiver. When some of the power from a free running Fabry-Perot type QCL is retroreflected with quasi-static optics we observe frequency pulling, mode splitting and chaos. Given the lack of calibrated frequency sources with sufficient stability and power to phase lock a QCL above a couple THz, attempts have been made to lock the absolute laser frequency by locking the beat frequency of a multimoded laser. We have phase locked the beat frequency between Fabry-Perot modes to an {approx}13 GHz microwave reference source with a linewidth less than 1 Hz, but did not see any improvment in stability of the absolute frequency of the laser. In this case, when some laser power is retroreflected back into the laser, the absolute frequency can be pulled significantly as a function of the external path length.« less

Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

NASA Astrophysics Data System (ADS)

Fu, Enjin

Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier injection modulators and light-emitting diodes (LED) with drive voltage requirements below 1.5V. Measurement results show an optical link based on a 70MHz red LED work well at 300Mbps by using the pre-emphasis driver module. A traveling wave electrode (TWE) modulator structure is presented, including a novel design methodology to address process limitations imposed by a commercial silicon fabrication technology. Results from 3D full wave EM simulation demonstrate the application of the design methodology to achieve specifications, including phase velocity matching, insertion loss, and impedance matching. Results show the HBT-based TWE-EAM system has the bandwidth higher than 60GHz.

Monolithic circuits for barium fluoride detectors used in nuclear physics experiments. CRADA final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varner, R.L.; Blankenship, J.L.; Beene, J.R.

1998-02-01

Custom monolithic electronic circuits have been developed recently for large detector applications in high energy physics where subsystems require tens of thousands of channels of signal processing and data acquisition. In the design and construction of these enormous detectors, it has been found that monolithic circuits offer significant advantages over discrete implementations through increased performance, flexible packaging, lower power and reduced cost per channel. Much of the integrated circuit design for the high energy physics community is directly applicable to intermediate energy heavy-ion and electron physics. This STTR project conducted in collaboration with researchers at the Holifield Radioactive Ion Beammore » Facility (HRIBF) at Oak Ridge National Laboratory, sought to develop a new integrated circuit chip set for barium fluoride (BaF{sub 2}) detector arrays based upon existing CMOS monolithic circuit designs created for the high energy physics experiments. The work under the STTR Phase 1 demonstrated through the design, simulation, and testing of several prototype chips the feasibility of using custom CMOS integrated circuits for processing signals from BaF{sub 2} detectors. Function blocks including charge-sensitive amplifiers, comparators, one shots, time-to-amplitude converters, analog memory circuits and buffer amplifiers were implemented during Phase 1 effort. Experimental results from bench testing and laboratory testing with sources were documented.« less

Scalable Fabrication of Photochemically Reduced Graphene-Based Monolithic Micro-Supercapacitors with Superior Energy and Power Densities.

PubMed

Wang, Sen; Wu, Zhong-Shuai; Zheng, Shuanghao; Zhou, Feng; Sun, Chenglin; Cheng, Hui-Ming; Bao, Xinhe

2017-04-25

Micro-supercapacitors (MSCs) hold great promise as highly competitive miniaturized power sources satisfying the increased demand of smart integrated electronics. However, single-step scalable fabrication of MSCs with both high energy and power densities is still challenging. Here we demonstrate the scalable fabrication of graphene-based monolithic MSCs with diverse planar geometries and capable of superior integration by photochemical reduction of graphene oxide/TiO 2 nanoparticle hybrid films. The resulting MSCs exhibit high volumetric capacitance of 233.0 F cm -3 , exceptional flexibility, and remarkable capacity of modular serial and parallel integration in aqueous gel electrolyte. Furthermore, by precisely engineering the interface of electrode with electrolyte, these monolithic MSCs can operate well in a hydrophobic electrolyte of ionic liquid (3.0 V) at a high scan rate of 200 V s -1 , two orders of magnitude higher than those of conventional supercapacitors. More notably, the MSCs show landmark volumetric power density of 312 W cm -3 and energy density of 7.7 mWh cm -3 , both of which are among the highest values attained for carbon-based MSCs. Therefore, such monolithic MSC devices based on photochemically reduced, compact graphene films possess enormous potential for numerous miniaturized, flexible electronic applications.

Monolithically integrated tri-axis shock accelerometers with MHz-level high resonant-frequency

NASA Astrophysics Data System (ADS)

Zou, Hongshuo; Wang, Jiachou; Chen, Fang; Bao, Haifei; Jiao, Ding; Zhang, Kun; Song, Zhaohui; Li, Xinxin

2017-07-01

This paper reports a novel monolithically integrated tri-axis high-shock accelerometer with high resonant-frequency for the detection of a broad frequency-band shock signal. For the first time, a resonant-frequency as high as about 1.4 MHz is designed for all the x-, y- and z-axis accelerometers of the integrated tri-axis sensor. In order to achieve a wide frequency-band detection performance, all the three sensing structures are designed into an axially compressed/stretched tiny-beam sensing scheme, where the p  +  -doped tiny-beams are connected into a Wheatstone bridge for piezoresistive output. By using ordinary (1 1 1) silicon wafer (i.e. non-SOI wafer), a single-wafer based fabrication technique is developed to monolithically integrate the three sensing structures for the tri-axis sensor. Testing results under high-shock acceleration show that each of the integrated three-axis accelerometers exhibit about 1.4 MHz resonant-frequency and 0.2-0.4 µV/V/g sensitivity. The achieved high frequencies for all the three sensing units make the tri-axis sensor promising in high fidelity 3D high-shock detection applications.

GPU-based optical propagation simulator of a laser-processed crystal block for the X'tal cube PET detector.

PubMed

Ogata, Yuma; Ohnishi, Takashi; Moriya, Takahiro; Inadama, Naoko; Nishikido, Fumihiko; Yoshida, Eiji; Murayama, Hideo; Yamaya, Taiga; Haneishi, Hideaki

2014-01-01

The X'tal cube is a next-generation DOI detector for PET that we are developing to offer higher resolution and higher sensitivity than is available with present detectors. It is constructed from a cubic monolithic scintillation crystal and silicon photomultipliers which are coupled on various positions of the six surfaces of the cube. A laser-processing technique is applied to produce 3D optical boundaries composed of micro-cracks inside the monolithic scintillator crystal. The current configuration is based on an empirical trial of a laser-processed boundary. There is room to improve the spatial resolution by optimizing the setting of the laser-processed boundary. In fact, the laser-processing technique has high freedom in setting the parameters of the boundary such as size, pitch, and angle. Computer simulation can effectively optimize such parameters. In this study, to design optical characteristics properly for the laser-processed crystal, we developed a Monte Carlo simulator which can model arbitrary arrangements of laser-processed optical boundaries (LPBs). The optical characteristics of the LPBs were measured by use of a setup with a laser and a photo-diode, and then modeled in the simulator. The accuracy of the simulator was confirmed by comparison of position histograms obtained from the simulation and from experiments with a prototype detector composed of a cubic LYSO monolithic crystal with 6 × 6 × 6 segments and multi-pixel photon counters. Furthermore, the simulator was accelerated by parallel computing with general-purpose computing on a graphics processing unit. The calculation speed was about 400 times faster than that with a CPU.

Monolithically Integrated μLEDs on Silicon Neural Probes for High-Resolution Optogenetic Studies in Behaving Animals

PubMed Central

Wu, Fan; Stark, Eran; Ku, Pei-Cheng; Wise, Kensall D.; Buzsáki, György; Yoon, Euisik

2015-01-01

SUMMARY We report a scalable method to monolithically integrate microscopic light emitting diodes (μLEDs) and recording sites onto silicon neural probes for optogenetic applications in neuroscience. Each μLED and recording site has dimensions similar to a pyramidal neuron soma, providing confined emission and electrophysiological recording of action potentials and local field activity. We fabricated and implanted the four-shank probes, each integrated with 12 μLEDs and 32 recording sites, into the CA1 pyramidal layer of anesthetized and freely moving mice. Spikes were robustly induced by 60 nW light power, and fast population oscillations were induced at the microwatt range. To demonstrate the spatiotemporal precision of parallel stimulation and recording, we achieved independent control of distinct cells ~50 μm apart and of differential somatodendritic compartments of single neurons. The scalability and spatiotemporal resolution of this monolithic optogenetic tool provides versatility and precision for cellular-level circuit analysis in deep structures of intact, freely moving animals. PMID:26627311

Smart Sensing Strip Using Monolithically Integrated Flexible Flow Sensor for Noninvasively Monitoring Respiratory Flow

PubMed Central

Jiang, Peng; Zhao, Shuai; Zhu, Rong

2015-01-01

This paper presents a smart sensing strip for noninvasively monitoring respiratory flow in real time. The monitoring system comprises a monolithically-integrated flexible hot-film flow sensor adhered on a molded flexible silicone case, where a miniaturized conditioning circuit with a Bluetooth4.0 LE module are packaged, and a personal mobile device that wirelessly acquires respiratory data transmitted from the flow sensor, executes extraction of vital signs, and performs medical diagnosis. The system serves as a wearable device to monitor comprehensive respiratory flow while avoiding use of uncomfortable nasal cannula. The respiratory sensor is a flexible flow sensor monolithically integrating four elements of a Wheatstone bridge on single chip, including a hot-film resistor, a temperature-compensating resistor, and two balancing resistors. The monitor takes merits of small size, light weight, easy operation, and low power consumption. Experiments were conducted to verify the feasibility and effectiveness of monitoring and diagnosing respiratory diseases using the proposed system. PMID:26694401

Monolithic crystalline cladding microstructures for efficient light guiding and beam manipulation in passive and active regimes.

PubMed

Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R; Castillo, Gabriel R; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng

2014-08-07

Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips.

Process-Based Cost Modeling of Photonics Manufacture: The Cost Competitiveness of Monolithic Integration of a 1550-nm DFB Laser and an Electroabsorptive Modulator on an InP Platform

NASA Astrophysics Data System (ADS)

Fuchs, Erica R. H.; Bruce, E. J.; Ram, R. J.; Kirchain, Randolph E.

2006-08-01

The monolithic integration of components holds promise to increase network functionality and reduce packaging expense. Integration also drives down yield due to manufacturing complexity and the compounding of failures across devices. Consensus is lacking on the economically preferred extent of integration. Previous studies on the cost feasibility of integration have used high-level estimation methods. This study instead focuses on accurate-to-industry detail, basing a process-based cost model of device manufacture on data collected from 20 firms across the optoelectronics supply chain. The model presented allows for the definition of process organization, including testing, as well as processing conditions, operational characteristics, and level of automation at each step. This study focuses on the cost implications of integration of a 1550-nm DFB laser with an electroabsorptive modulator on an InP platform. Results show the monolithically integrated design to be more cost competitive over discrete component options regardless of production scale. Dominant cost drivers are packaging, testing, and assembly. Leveraging the technical detail underlying model projections, component alignment, bonding, and metal-organic chemical vapor deposition (MOCVD) are identified as processes where technical improvements are most critical to lowering costs. Such results should encourage exploration of the cost advantages of further integration and focus cost-driven technology development.

Silicon photonics and challenges for fabrication

NASA Astrophysics Data System (ADS)

Feilchenfeld, N. B.; Nummy, K.; Barwicz, T.; Gill, D.; Kiewra, E.; Leidy, R.; Orcutt, J. S.; Rosenberg, J.; Stricker, A. D.; Whiting, C.; Ayala, J.; Cucci, B.; Dang, D.; Doan, T.; Ghosal, M.; Khater, M.; McLean, K.; Porth, B.; Sowinski, Z.; Willets, C.; Xiong, C.; Yu, C.; Yum, S.; Giewont, K.; Green, W. M. J.

2017-03-01

Silicon photonics is rapidly becoming the key enabler for meeting the future data speed and volume required by the Internet of Things. A stable manufacturing process is needed to deliver cost and yield expectations to the technology marketplace. We present the key challenges and technical results from both 200mm and 300mm facilities for a silicon photonics fabrication process which includes monolithic integration with CMOS. This includes waveguide patterning, optical proximity correction for photonic devices, silicon thickness uniformity and thick material patterning for passive fiber to waveguide alignment. The device and process metrics show that the transfer of the silicon photonics process from 200mm to 300mm will provide a stable high volume manufacturing platform for silicon photonics designs.

Fast and compact internal scanning CMOS-based hyperspectral camera: the Snapscan

NASA Astrophysics Data System (ADS)

Pichette, Julien; Charle, Wouter; Lambrechts, Andy

2017-02-01

Imec has developed a process for the monolithic integration of optical filters on top of CMOS image sensors, leading to compact, cost-efficient and faster hyperspectral cameras. Linescan cameras are typically used in remote sensing or for conveyor belt applications. Translation of the target is not always possible for large objects or in many medical applications. Therefore, we introduce a novel camera, the Snapscan (patent pending), exploiting internal movement of a linescan sensor enabling fast and convenient acquisition of high-resolution hyperspectral cubes (up to 2048x3652x150 in spectral range 475-925 nm). The Snapscan combines the spectral and spatial resolutions of a linescan system with the convenience of a snapshot camera.

Ultralow-threshold microcavity Raman laser on a microelectronic chip

NASA Astrophysics Data System (ADS)

Kippenberg, T. J.; Spillane, S. M.; Armani, D. K.; Vahala, K. J.

2004-06-01

Using ultrahigh-Q toroid microcavities on a chip, we demonstrate a monolithic microcavity Raman laser. Cavity photon lifetimes in excess of 100 ns combined with mode volumes typically of less than 1000 µm^3 significantly reduce the threshold for stimulated Raman scattering. In conjunction with the high ideality of a tapered optical fiber coupling junction, stimulated Raman lasing is observed at an ultralow threshold (as low as 74 µW of fiber-launched power at 1550 nm) with high efficiency (up to 45% at the critical coupling point) in good agreement with theoretical modeling. Equally important, the wafer-scale nature of these devices should permit integration with other photonic, mechanical, or electrical functionality on a chip.

Ultralow-threshold microcavity Raman laser on a microelectronic chip.

PubMed

Kippenberg, T J; Spillane, S M; Armani, D K; Vahala, K J

2004-06-01

Using ultrahigh-Q toroid microcavities on a chip, we demonstrate a monolithic microcavity Raman laser. Cavity photon lifetimes in excess of 100 ns combined with mode volumes typically of less than 1000 (microm)3 significantly reduce the threshold for stimulated Raman scattering. In conjunction with the high ideality of a tapered optical fiber coupling junction, stimulated Raman lasing is observed at an ultralow threshold (as low as 74 microW of fiber-launched power at 1550 nm) with high efficiency (up to 45% at the critical coupling point) in good agreement with theoretical modeling. Equally important, the wafer-scale nature of these devices should permit integration with other photonic, mechanical, or electrical functionality on a chip.

High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array

DOEpatents

Freitas, Barry L.

1998-01-01

An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver>4kW/cm2 of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources.

Design and fabrication of a foldable 3D silicon based package for solid state lighting applications

NASA Astrophysics Data System (ADS)

Sokolovskij, R.; Liu, P.; van Zeijl, H. W.; Mimoun, B.; Zhang, G. Q.

2015-05-01

Miniaturization of solid state lighting (SSL) luminaires as well as reduction of packaging and assembly costs are of prime interest for the SSL lighting industry. A novel silicon based LED package for lighting applications is presented in this paper. The proposed design consists of 5 rigid Si tiles connected by flexible polyimide hinges with embedded interconnects (ICs). Electrical, optical and thermal characteristics were taken into consideration during design. The fabrication process involved polyimide (PI) application and patterning, aluminium interconnect integration in the flexible hinge, LED reflector cavity formation and metalization followed by through wafer DRIE etching for chip formation and release. A method to connect chip front to backside without TSVs was also integrated into the process. Post-fabrication wafer level assembly included LED mounting and wirebond, phosphor-based colour conversion and silicone encapsulation. The package formation was finalized by vacuum assisted wrapping around an assembly structure to form a 3D geometry, which is beneficial for omnidirectional lighting. Bending tests were performed on the flexible ICs and optical performance at different temperatures was evaluated. It is suggested that 3D packages can be expanded to platforms for miniaturized luminaire applications by combining monolithic silicon integration and system-in-package (SiP) technologies.

Light weight, high-speed, and self-powered wireless fiber optic sensor (WiFOS) structural health monitor system for avionics and aerospace environments

NASA Astrophysics Data System (ADS)

Mendoza, Edgar A.; Kempen, Cornelia; Sun, Sunjian; Esterkin, Yan

2014-09-01

This paper describes recent progress towards the development of an innovative light weight, high-speed, and selfpowered wireless fiber optic sensor (WiFOS™) structural health monitor system suitable for the onboard and in-flight unattended detection, localization, and classification of load, fatigue, and structural damage in advanced composite materials commonly used in avionics and aerospace systems. The WiFOS™ system is based on ROI's advancements on monolithic photonic integrated circuit microchip technology, integrated with smart power management, on-board data processing, wireless data transmission optoelectronics, and self-power using energy harvesting tools such as solar, vibration, thermoelectric, and magneto-electric. The self-powered, wireless WiFOS™ system offers a versatile and powerful SHM tool to enhance the reliability and safety of avionics platforms, jet fighters, helicopters, commercial aircraft that use lightweight composite material structures, by providing comprehensive information about the structural integrity of the structure from a large number of locations. Immediate SHM applications are found in rotorcraft and aircraft, ships, submarines, and in next generation weapon systems, and in commercial oil and petrochemical, aerospace industries, civil structures, power utilities, portable medical devices, and biotechnology, homeland security and a wide spectrum of other applications.

Monolithically Integrated Reconfigurable Filters for Microwave Photonic Links

NASA Astrophysics Data System (ADS)

Norberg, Erik J.

For the purposes of commercial communication and military electronic warfare and radar alike, there is an increasing interest in RF systems that can handle very wide instantaneous bandwidths at high center frequencies. Optical signal processing has the capability to reduce latency, improve size, weight and power (SwAP) performance, and overcome the inherent bandwidth limitations of electronic counterparts. By rapidly pre-filtering wide bandwidth microwave signals in the optical domain, the analog-to-digital conversion (ADC) and subsequent digital signal processing (DSP) can be significantly relieved. Compared to channelizing and add/drop filters for wavelength division multiplexing (WDM) applications, the microwave filter application is much more challenging as it requires a more versatile filter, ideally with tunability in both frequency and bandwidth. In this work such a filter was developed using integrated photonics. By integrating the filter on a single InP chip, the stability required for coherent filtering is met, while the active integration platform offers a flexible filter design and higher tolerance in the coupler and fabrication specifications. Using an entirely deep etched fabrication with a single blanket regrowth, a simple fabrication with high yield is achieved. The reconfigurable filter is designed as an array of uncoupled filter stages with each filter stage reconfigurable as a filter pole or zero with arbitrary magnitude and phase. This gives rise to a flexible ffilter synthesis, much like an optical version of DSP filters. Flat-topped bandpass filters are demonstrated with frequency tunability over 30 GHz, bandwidth adjustable between 1.9 and 5.4 GHz, and stopband rejection >32 dB. In order to meet the stringent spurious-free dynamic range (SFDR) requirements of the microwave application, a novel epitaxial layer integration platform is developed. Optimized for high optical saturation power and low propagation loss, it produces semiconductor optical amplifiers (SOAs) with low distortion and noise. Utilizing a novel characterization method of RF signal distortion for photonic devices, SOAs with state-of-the art SFDR in the range of 115 dB--Hz2/3 and a noise figure of 3.8 dB for 6 dB gain, is demonstrated. It is projected that this platform could ultimately provide integration for photonic microwave filter applications.

Large-scale quantum photonic circuits in silicon

NASA Astrophysics Data System (ADS)

Harris, Nicholas C.; Bunandar, Darius; Pant, Mihir; Steinbrecher, Greg R.; Mower, Jacob; Prabhu, Mihika; Baehr-Jones, Tom; Hochberg, Michael; Englund, Dirk

2016-08-01

Quantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today's classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes. Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.

Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs.

PubMed

Xu, Kaikai

2013-09-20

In this paper, the emission of visible light by a monolithically integrated silicon p-n junction under reverse-bias is discussed. The modulation of light intensity is achieved using an insulated-gate terminal on the surface of the p-n junction. By varying the gate voltage, the breakdown voltage of the p-n junction will be adjustable so that the reverse current I(sub) flowing through the p-n junction at a fixed reverse-bias voltage is changed. It is observed that the light, which is emitted from the defects located at the p-n junction, depends closely on the reverse current I(sub). In regard to the phenomenon of electroluminescence, the relationship between the optical emission power and the reverse current I(sub) is linear. On the other hand, it is observed that both the quantum efficiency and the power conversion efficiency are able to have obvious enhancement, although the reverse-bias of the p-n junction is reduced and the corresponding reverse-current is much lower. Moreover, the successful fabrication on monolithic silicon light source on the bulk silicon by means of standard silicon complementary metal-oxide-semiconductor process technology is presented.

An X-Band SOS Resistive Gate-Insulator-Semiconductor /RIS/ switch

NASA Astrophysics Data System (ADS)

Kwok, S. P.

1980-02-01

The new X-Band Resistive Gate-Insulator-Semiconductor (RIS) switch has been fabricated on silicon-on-sapphire, and its equivalent circuit model characterized. An RIS SPST switch with 20-dB on/off isolation, 1.2-dB insertion loss, and power handling capacity in excess of 20-W peak has been achieved at X band. The device switching time is on the order of 600 ns, and it requires negligible control holding current in both on and off states. The device is compatible with monolithic integrated-circuit technology and thus is suitable for integration into low-cost monolithic phase shifters or other microwave integrated circuits.

Integrated Radial Probe Transition From MMIC to Waveguide

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Chattopadhyay, Goutam

2007-01-01

A radial probe transition between a monolithic microwave integrated circuit (MMIC) and a waveguide has been designed for operation at frequency of 340 GHz and to be fabricated as part of a monolithic unit that includes the MMIC. Integrated radial probe transitions like this one are expected to be essential components of future MMIC amplifiers operating at frequencies above 200 GHz. While MMIC amplifiers for this frequency range have not yet been widely used because they have only recently been developed, there are numerous potential applications for them-- especially in scientific instruments, test equipment, radar, and millimeter-wave imaging systems for detecting hidden weapons.

A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (1 1 1) Si for MOEMS

NASA Astrophysics Data System (ADS)

Wu, Mingching; Fang, Weileun

2006-02-01

This work attempts to integrate poly-Si thin film and single-crystal-silicon (SCS) structures in a monolithic process. The process integrated multi-depth DRIE (deep reactive ion etching), trench-refilled molding, a two poly-Si MUMPs process and (1 1 1) Si bulk micromachining to accomplish multi-thickness and multi-depth structures for superior micro-optical devices. In application, a SCS scanning mirror driven by self-aligned vertical comb-drive actuators was demonstrated. The stiffness of the mirror was significantly increased by thick SCS structures. The thin poly-Si film served as flexible torsional springs and electrical routings. The depth difference of the vertical comb electrodes was tuned by DRIE to increase the devices' stroke. Finally, a large moving space was available after the bulk Si etching. In summary, the present fabrication process, named (1 1 1) MOSBE (molded surface-micromachining and bulk etching release on (1 1 1) Si substrate), can further integrate with the MUMPs devices to establish a more powerful platform.

Near-Field Integration of a SiN Nanobeam and a SiO2 Microcavity for Heisenberg-Limited Displacement Sensing

NASA Astrophysics Data System (ADS)

Schilling, R.; Schütz, H.; Ghadimi, A. H.; Sudhir, V.; Wilson, D. J.; Kippenberg, T. J.

2016-05-01

Placing a nanomechanical object in the evanescent near field of a high-Q optical microcavity gives access to strong gradient forces and quantum-limited displacement readout, offering an attractive platform for both precision sensing technology and basic quantum optics research. Robustly implementing this platform is challenging, however, as it requires integrating optically smooth surfaces separated by ≲λ /10 . Here we describe an exceptionally high-cooperativity, single-chip optonanomechanical transducer based on a high-stress Si3N4 nanobeam monolithically integrated into the evanescent near field of SiO2 microdisk cavity. Employing a vertical integration technique based on planarized sacrificial layers, we realize beam-disk gaps as little as 25 nm while maintaining mechanical Q f >1012 Hz and intrinsic optical Q ˜107. The combination of low loss, small gap, and parallel-plane geometry results in radio-frequency flexural modes with vacuum optomechanical coupling rates of 100 kHz, single-photon cooperativities in excess of unity, and large zero-point frequency (displacement) noise amplitudes of 10 kHz (fm )/√ Hz . In conjunction with the high power-handling capacity of SiO2 and low extraneous substrate noise, the transducer performs particularly well as a sensor, with recent deployment in a 4-K cryostat realizing a displacement imprecision 40 dB below that at the standard quantum limit (SQL) and an imprecision-backaction product <5 ℏ [Wilson et al., Nature (London) 524, 325 (2015)]. In this report, we provide a comprehensive description of device design, fabrication, and characterization, with an emphasis on extending Heisenberg-limited readout to room temperature. Towards this end, we describe a room-temperature experiment in which a displacement imprecision 32 dB below that at the SQL and an imprecision-backaction product <60 ℏ is achieved. Our results extend the outlook for measurement-based quantum control of nanomechanical oscillators and suggest an alternative platform for functionally integrated "hybrid" quantum optomechanics.

Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip.

PubMed

Schuck, C; Guo, X; Fan, L; Ma, X; Poot, M; Tang, H X

2016-01-21

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips.

Spatio-temporal modeling and optimization of a deformable-grating compressor for short high-energy laser pulses

DOE PAGES

Qiao, Jie; Papa, J.; Liu, X.

2015-09-24

Monolithic large-scale diffraction gratings are desired to improve the performance of high-energy laser systems and scale them to higher energy, but the surface deformation of these diffraction gratings induce spatio-temporal coupling that is detrimental to the focusability and compressibility of the output pulse. A new deformable-grating-based pulse compressor architecture with optimized actuator positions has been designed to correct the spatial and temporal aberrations induced by grating wavefront errors. An integrated optical model has been built to analyze the effect of grating wavefront errors on the spatio-temporal performance of a compressor based on four deformable gratings. Moreover, a 1.5-meter deformable gratingmore » has been optimized using an integrated finite-element-analysis and genetic-optimization model, leading to spatio-temporal performance similar to the baseline design with ideal gratings.« less

Contact-lens type of micromachined hydrogenated amorphous Si fluorescence detector coupled with microfluidic electrophoresis devices

NASA Astrophysics Data System (ADS)

Kamei, Toshihiro; Wada, Takehito

2006-09-01

A 5.8-μm-thick SiO2/Ta2O5 multilayer optical interference filter was monolithically integrated and micromachined on a hydrogenated amorphous Si (a-Si :H) pin photodiode to form a fluorescence detector. A microfluidic electrophoresis device was mounted on a detection platform comprising a fluorescence-collecting half-ball lens and the micromachined fluorescence detector. The central aperture of the fluorescence detector allows semiconductor laser light to pass up through the detector and to irradiate an electrophoretic separation channel. The limit of detection is as low as 7nM of the fluorescein solution, and high-speed DNA fragment sizing can be achieved with high separation efficiency. The micromachined a-Si :H fluorescence detector exhibits high sensitivity for practical fluorescent labeling dyes as well as integration flexibility on various substances, making it ideal for application to portable microfluidic bioanalysis devices.

1990 MTT-S International Microwave Symposium and Exhibition and Microwave and Millimeter-Wave Monolithic IC Symposium, Dallas, TX, May 7-10, 1990, Proceedings

NASA Astrophysics Data System (ADS)

McQuiddy, David N., Jr.; Sokolov, Vladimir

1990-12-01

The present conference discusses microwave filters, lightwave technology for microwave antennas, planar and quasi-planar guides, mixers and VCOs, cavity filters, discontinuity and coupling effects, control circuits, power dividers and phase shifters, microwave ICs, biological effects and medical applications, CAD and modeling for MMICs, directional couplers, MMIC design trends, microwave packaging and manufacturing, monolithic ICs, and solid-state devices and circuits. Also discussed are microwave and mm-wave superconducting technology, MICs for communication systems, the merging of optical and microwave technologies, microwave power transistors, ferrite devices, network measurements, advanced transmission-line structures, FET devices and circuits, field theory of IC discontinuities, active quasi-optical techniques, phased-array techniques and circuits, nonlinear CAD, sub-mm wave devices, and high power devices.

Ultra-Low Loss Waveguides with Application to Photonic Integrated Circuits

NASA Astrophysics Data System (ADS)

Bauters, Jared F.

The integration of photonic components using a planar platform promises advantages in cost, size, weight, and power consumption for optoelectronic systems. Yet, the typical propagation loss of 5-10 dB/m in a planar silica waveguide is nearly five orders-of-magnitude larger than that in low loss optical fibers. For some applications, the miniaturization of the photonic system and resulting smaller propagation lengths from integration are enough to overcome the increase in propagation loss. For other more demanding systems or applications, such as those requiring long optical time delays or high-quality-factor (Q factor) resonators, the high propagation loss can degrade system performance to a degree that trumps the potential advantages offered by integration. Thus, the reduction of planar waveguide propagation loss in a Si3-N4 based waveguide platform is a primary focus of this dissertation. The ultra-low loss stoichiometric Si3-N4 waveguide platform offers the additional advantages of fabrication process stability and repeatability. Yet, active devices such as lasers, amplifiers, and photodetectors have not been monolithically integrated with ultra-low loss waveguides due to the incompatibility of the active and ultra-low loss processing thermal budgets (ultra-low loss waveguides are annealed at temperatures exceeding 1000 °C in order to drive out impurities). So a platform that enables the integration of active devices with the ultra-low losses of the Si3- N4 waveguide platform is this dissertation's second focus. The work enables the future fabrication of sensor, gyroscope, true time delay, and low phase noise oscillator photonic integrated circuits.

High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array

DOEpatents

Freitas, B.L.

1998-10-27

An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver > 4kW/cm{sup 2} of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources. 13 figs.

In-line optical fiber metallic mirror reflector for monolithic common path optical coherence tomography probes.

PubMed

Singh, Kanwarpal; Reddy, Rohith; Sharma, Gargi; Verma, Yogesh; Gardecki, Joseph A; Tearney, Guillermo

2018-03-01

Endoscopic optical coherence tomography probes suffer from various artifacts due to dispersion imbalance and polarization mismatch between reference and sample arm light. Such artifacts can be minimized using a common path approach. In this work, we demonstrate a miniaturized common path probe for optical coherence tomography using an inline fiber mirror. A common path optical fiber probe suitable for performing high-resolution endoscopic optical coherence tomography imaging was developed. To achieve common path functionality, an inline fiber mirror was fabricated using a thin gold layer. A commercially available swept source engine was used to test the designed probe in a cadaver human coronary artery ex vivo. We achieved a sensitivity of 104 dB for this probe using a swept source optical coherence tomography system. To test the probe, images of a cadaver human coronary artery were obtained, demonstrating the quality that is comparable to those obtained by OCT systems with separate reference arms. Additionally, we demonstrate recovery of ranging depth by use of a Michelson interferometer in the detection path. We developed a miniaturized monolithic inline fiber mirror-based common path probe for optical coherence tomography. Owing to its simplicity, our design will be helpful in endoscopic applications that require high-resolution probes in a compact form factor while reducing system complexity. Lasers Surg. Med. 50:230-235, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhaojun; Ma, Jun; Huang, Tongde

2014-03-03

In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

Coplanar monolithic integrated circuits for low-noise communication and radar systems

NASA Astrophysics Data System (ADS)

Bessemoulin, Alexandre; Verweyen, Ludger; Marsetz, Waldemar; Massler, Hermann; Neumann, Markus; Hulsmann, Axel; Schlechtweg, Michael

1999-12-01

This paper presents coplanar millimeter-wave monolithic integrated circuits with high performance and small size for use in low noise communication and radar system applications. Technology and modeling issues with respect to active and passive elements are discussed first. In a second step, the potential of coplanar waveguides to realize compact ICs is illustrated through various design examples, such as low noise amplifiers, mixers and power amplifiers. The performance of multifunctional ICs is also presented by comparing simulated and measured results for a complete 77 GHz Transceive MMIC.

InP-based compact transversal filter for monolithically integrated light source array.

PubMed

Ueda, Yuta; Fujisawa, Takeshi; Takahata, Kiyoto; Kohtoku, Masaki; Ishii, Hiroyuki

2014-04-07

We developed an InP-based 4x1 transversal filter (TF) with multi-mode interference couplers (MMIs) as a compact wavelength multiplexer (MUX) 1700 μm x 400 μm in size. Furthermore, we converted the MMI-based TF to a reflection type to obtain an ultra-compact MUX of only 900 μm x 50 μm. These MUXs are made with a simple fabrication process and show a satisfactory wavelength filtering operation as MUXs of monolithically integrated light source arrays, for example, for 100G bit Ethernet.

A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

NASA Technical Reports Server (NTRS)

Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto

1987-01-01

A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

High-performance packaging for monolithic microwave and millimeter-wave integrated circuits

NASA Technical Reports Server (NTRS)

Shalkhauser, K. A.; Li, K.; Shih, Y. C.

1992-01-01

Packaging schemes are developed that provide low-loss, hermetic enclosure for enhanced monolithic microwave and millimeter-wave integrated circuits. These package schemes are based on a fused quartz substrate material offering improved RF performance through 44 GHz. The small size and weight of the packages make them useful for a number of applications, including phased array antenna systems. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices.

Monolithically Integrated, Mechanically Resilient Carbon-Based Probes for Scanning Probe Microscopy

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Megerian, Krikor G.; Jennings, Andrew T.; Greer, Julia R.

2010-01-01

Scanning probe microscopy (SPM) is an important tool for performing measurements at the nanoscale in imaging bacteria or proteins in biology, as well as in the electronics industry. An essential element of SPM is a sharp, stable tip that possesses a small radius of curvature to enhance spatial resolution. Existing techniques for forming such tips are not ideal. High-aspect-ratio, monolithically integrated, as-grown carbon nanofibers (CNFs) have been formed that show promise for SPM applications by overcoming the limitations present in wet chemical and separate substrate etching processes.

Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond

DOE PAGES

Zhang, Jingyuan Linda; Sun, Shuo; Burek, Michael J.; ...

2018-01-29

Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into themore » cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. Here, we also demonstrate the largest coupling strength ( g/2π = 4.9 ± 0.3 GHz) and cooperativity ( C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.« less

Development of an optical character recognition pipeline for handwritten form fields from an electronic health record.

PubMed

Rasmussen, Luke V; Peissig, Peggy L; McCarty, Catherine A; Starren, Justin

2012-06-01

Although the penetration of electronic health records is increasing rapidly, much of the historical medical record is only available in handwritten notes and forms, which require labor-intensive, human chart abstraction for some clinical research. The few previous studies on automated extraction of data from these handwritten notes have focused on monolithic, custom-developed recognition systems or third-party systems that require proprietary forms. We present an optical character recognition processing pipeline, which leverages the capabilities of existing third-party optical character recognition engines, and provides the flexibility offered by a modular custom-developed system. The system was configured and run on a selected set of form fields extracted from a corpus of handwritten ophthalmology forms. The processing pipeline allowed multiple configurations to be run, with the optimal configuration consisting of the Nuance and LEADTOOLS engines running in parallel with a positive predictive value of 94.6% and a sensitivity of 13.5%. While limitations exist, preliminary experience from this project yielded insights on the generalizability and applicability of integrating multiple, inexpensive general-purpose third-party optical character recognition engines in a modular pipeline.

Development of an optical character recognition pipeline for handwritten form fields from an electronic health record

PubMed Central

Peissig, Peggy L; McCarty, Catherine A; Starren, Justin

2011-01-01

Background Although the penetration of electronic health records is increasing rapidly, much of the historical medical record is only available in handwritten notes and forms, which require labor-intensive, human chart abstraction for some clinical research. The few previous studies on automated extraction of data from these handwritten notes have focused on monolithic, custom-developed recognition systems or third-party systems that require proprietary forms. Methods We present an optical character recognition processing pipeline, which leverages the capabilities of existing third-party optical character recognition engines, and provides the flexibility offered by a modular custom-developed system. The system was configured and run on a selected set of form fields extracted from a corpus of handwritten ophthalmology forms. Observations The processing pipeline allowed multiple configurations to be run, with the optimal configuration consisting of the Nuance and LEADTOOLS engines running in parallel with a positive predictive value of 94.6% and a sensitivity of 13.5%. Discussion While limitations exist, preliminary experience from this project yielded insights on the generalizability and applicability of integrating multiple, inexpensive general-purpose third-party optical character recognition engines in a modular pipeline. PMID:21890871

Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

PubMed

Li, Changyi; Wright, Jeremy B; Liu, Sheng; Lu, Ping; Figiel, Jeffrey J; Leung, Benjamin; Chow, Weng W; Brener, Igal; Koleske, Daniel D; Luk, Ting-Shan; Feezell, Daniel F; Brueck, S R J; Wang, George T

2017-02-08

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

Nonpolar InGaN/GaN core–shell single nanowire lasers

DOE PAGES

Li, Changyi; Wright, Jeremy Benjamin; Liu, Sheng; ...

2017-01-24

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core–shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core–shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core–shell nanowires, despite significantly shorter cavity lengths and reducedmore » active region volume. Mode simulations show that due to the core–shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. Furthermore, the results show the viability of this p-i-n nonpolar core–shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV–visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.« less

Photoconductive terahertz near-field detector with a hybrid nanoantenna array cavity

DOE PAGES

Mitrofanov, Oleg; Brener, Igal; Luk, Ting S.; ...

2015-11-19

Nanoscale structuring of optical materials leads to modification of their properties and can be used for improving efficiencies of photonic devices and for enabling new functionalities. In ultrafast optoelectronic switches for generation and detection of terahertz (THz) radiation, incorporation of nanostructures allows us to overcome inherent limitations of photoconductive materials. We propose and demonstrate a nanostructured photoconductive THz detector for sampling highly localized THz fields, down to the level of λ/150. The nanostructure that consists of an array of optical nanoantennas and a distributed Bragg reflector forms a hybrid cavity, which traps optical gate pulses within the photoconductive layer. Themore » effect of photon trapping is observed as enhanced absorption at a designed wavelength. This optically thin photoconductive THz detector allows us to detect highly confined evanescent THz fields coupled through a deeply subwavelength aperture as small as 2 μm (λ/150 at 1 THz). As a result, by monolithically integrating the THz detector with apertures ranging from 2 to 5 μm we realize higher spatial resolution and higher sensitivity in aperture-type THz near-field microscopy and THz time-domain spectroscopy.« less

Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jingyuan Linda; Sun, Shuo; Burek, Michael J.

Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into themore » cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. Here, we also demonstrate the largest coupling strength ( g/2π = 4.9 ± 0.3 GHz) and cooperativity ( C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.« less

Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes

NASA Astrophysics Data System (ADS)

Gao, Yang; Cansizoglu, Hilal; Polat, Kazim G.; Ghandiparsi, Soroush; Kaya, Ahmet; Mamtaz, Hasina H.; Mayet, Ahmed S.; Wang, Yinan; Zhang, Xinzhi; Yamada, Toshishige; Devine, Ekaterina Ponizovskaya; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif

2017-04-01

High-speed, high-efficiency photodetectors play an important role in optical communication links that are increasingly being used in data centres to handle higher volumes of data traffic and higher bandwidths, as big data and cloud computing continue to grow exponentially. Monolithic integration of optical components with signal-processing electronics on a single silicon chip is of paramount importance in the drive to reduce cost and improve performance. We report the first demonstration of micro- and nanoscale holes enabling light trapping in a silicon photodiode, which exhibits an ultrafast impulse response (full-width at half-maximum) of 30 ps and a high efficiency of more than 50%, for use in data-centre optical communications. The photodiode uses micro- and nanostructured holes to enhance, by an order of magnitude, the absorption efficiency of a thin intrinsic layer of less than 2 µm thickness and is designed for a data rate of 20 gigabits per second or higher at a wavelength of 850 nm. Further optimization can improve the efficiency to more than 70%.

Scalable Fabrication of Integrated Nanophotonic Circuits on Arrays of Thin Single Crystal Diamond Membrane Windows.

PubMed

Piracha, Afaq H; Rath, Patrik; Ganesan, Kumaravelu; Kühn, Stefan; Pernice, Wolfram H P; Prawer, Steven

2016-05-11

Diamond has emerged as a promising platform for nanophotonic, optical, and quantum technologies. High-quality, single crystalline substrates of acceptable size are a prerequisite to meet the demanding requirements on low-level impurities and low absorption loss when targeting large photonic circuits. Here, we describe a scalable fabrication method for single crystal diamond membrane windows that achieves three major goals with one fabrication method: providing high quality diamond, as confirmed by Raman spectroscopy; achieving homogeneously thin membranes, enabled by ion implantation; and providing compatibility with established planar fabrication via lithography and vertical etching. On such suspended diamond membranes we demonstrate a suite of photonic components as building blocks for nanophotonic circuits. Monolithic grating couplers are used to efficiently couple light between photonic circuits and optical fibers. In waveguide coupled optical ring resonators, we find loaded quality factors up to 66 000 at a wavelength of 1560 nm, corresponding to propagation loss below 7.2 dB/cm. Our approach holds promise for the scalable implementation of future diamond quantum photonic technologies and all-diamond photonic metrology tools.

Passively mode-locked interband cascade optical frequency combs.

PubMed

Bagheri, Mahmood; Frez, Clifford; Sterczewski, Lukasz A; Gruidin, Ivan; Fradet, Mathieu; Vurgaftman, Igor; Canedy, Chadwick L; Bewley, William W; Merritt, Charles D; Kim, Chul Soo; Kim, Mijin; Meyer, Jerry R

2018-02-20

Since their inception, optical frequency combs have transformed a broad range of technical and scientific disciplines, spanning time keeping to navigation. Recently, dual comb spectroscopy has emerged as an attractive alternative to traditional Fourier transform spectroscopy, since it offers higher measurement sensitivity in a fraction of the time. Midwave infrared (mid-IR) frequency combs are especially promising as an effective means for probing the strong fundamental absorption lines of numerous chemical and biological agents. Mid-IR combs have been realized via frequency down-conversion of a near-IR comb, by optical pumping of a micro-resonator, and beyond 7 μm by four-wave mixing in a quantum cascade laser. In this work, we demonstrate an electrically-driven frequency comb source that spans more than 1 THz of bandwidth centered near 3.6 μm. This is achieved by passively mode-locking an interband cascade laser (ICL) with gain and saturable absorber sections monolithically integrated on the same chip. The new source will significantly enhance the capabilities of mid-IR multi-heterodyne frequency comb spectroscopy systems.

Configuration study for a 30 GHz monolithic receive array: Technical assessment

NASA Technical Reports Server (NTRS)

Nester, W. H.; Cleaveland, B.; Edward, B.; Gotkis, S.; Hesserbacker, G.; Loh, J.; Mitchell, B.

1984-01-01

The current status of monolithic microwave integrated circuits (MMICs) in phased array feeds is discussed from the point of view of cost performance, reliability, and design considerations. Transitions to MMICs, compatible antenna radiating elements and reliability considerations are addressed. Hybrid antennas, feed array antenna technology, and offset reflectors versus phased arrays are examined.

Monolithic Integrated Radiation Sensor Using Stimulated Luminescence From Alumina

NASA Technical Reports Server (NTRS)

McKeever, S. W. S.; Yukihara, E. G.; Stoebe, T. G.; Chen, T.-C.

2005-01-01

The project goal was to design and test a monolithic integrated device for radiation sensing, using optically stimulated luminescence (OSL) from Al2O3:C. The device would consist of GaN/InGaN-based components epitaxially grown on each side of a A12O3:C substrate. Radiation energy stored in the substrate would be stimulated by visible emission from a GaN light-emitting diode (LED) grown on one side of the device, and the OSL emission from the substrate (in the blue region of the spectrum) would be detected by the InGaN pi-n diode grown on the other side of the substrate. The primary application of the device would be in space radiation environments. Thus, two major research thrusts were launched during this project. Firstly, research at Oklahoma State University (Dr. Stephen W.S. McKeever and Dr. E.G. Yukihara) concentrated on characterization of the OSL properties of Al2O3:C in radiation fields typical of those experienced in low-Earth orbit. Secondly, research at the University of Washington (Co-Is, Dr. T.G. Stoebe and Dr. T. Chen) focused of device development and GaN/InGaN epitaxial growth. While progress in each line of research has been substantial, the ultimate goal (that of producing a working prototype device) has not yet been reached. We detail the research progress and identify outstanding issues in this paper.

Mechanical design of a single-axis monolithic accelerometer for advanced seismic attenuation systems

NASA Astrophysics Data System (ADS)

Bertolini, Alessandro; DeSalvo, Riccardo; Fidecaro, Francesco; Francesconi, Mario; Marka, Szabolcs; Sannibale, Virginio; Simonetti, Duccio; Takamori, Akiteru; Tariq, Hareem

2006-01-01

The design and mechanics for a new very-low noise low frequency horizontal accelerometer is presented. The sensor has been designed to be integrated in an advanced seismic isolation system for interferometric gravitational wave detectors. The motion of a small monolithic folded-pendulum (FP) is monitored by a high resolution capacitance displacement sensor; a feedback force actuator keeps the mass at the equilibrium position. The feedback signal is proportional to the ground acceleration in the frequency range 0-150 Hz. The very high mechanical quality factor, Q≃3000 at a resonant frequency of 0.5 Hz, reduces the Brownian motion of the proof mass of the accelerometer below the resolution of the displacement sensor. This scheme enables the accelerometer to detect the inertial displacement of a platform with a root-mean-square noise less than 1 nm, integrated over the frequency band from 0.01 to 150 Hz. The FP geometry, combined with the monolithic design, allows the accelerometer to be extremely directional. A vertical-horizontal coupling ranging better than 10-3 has been achieved. A detailed account of the design and construction of the accelerometer is reported here. The instrument is fully ultra-high vacuum compatible and has been tested and approved for integration in seismic attenuation system of japanese TAMA 300 gravitational wave detector. The monolithic design also makes the accelerometer suitable for cryogenic operation.

CVD SiC deformable mirror with monolithic cooling channels.

PubMed

Ahn, Kyohoon; Rhee, Hyug-Gyo; Yang, Ho-Soon; Kihm, Hagyong

2018-04-16

We propose a novel deformable mirror (DM) for adaptive optics in high power laser applications. The mirror is made of a Silicon carbide (SiC) faceplate, and cooling channels are embedded monolithically inside the faceplate with the chemical vapor desposition (CVD) method. The faceplate is 200 mm in diameter and 3 mm in thickness, and is actuated by 137 stack-type piezoelectric transducers arranged in a square grid. We also propose a new actuator influence function optimized for modelling our DM, which has a relatively stiffer faceplate and a higher coupling ratio compared with other DMs having thin faceplates. The cooling capability and optical performance of the DM are verified by simulations and actual experiments with a heat source. The DM is proved to operate at 1 kHz without the coolant flow and 100 Hz with the coolant flow, and the residual errors after compensation are less than 30 nm rms (root-mean-square). This paper presents the design, fabrication, and optical performance of the CVD SiC DM.

Structure for monolithic optical circuits

NASA Technical Reports Server (NTRS)

Evanchuk, Vincent L. (Inventor)

1984-01-01

A method for making monolithic optical circuits, with related optical devices as required or desired, on a supporting surface (10) consists of coating the supporting surface with reflecting metal or cladding resin, spreading a layer of liquid radiation sensitive plastic (12) on the surface, exposing the liquid plastic with a mask (14) to cure it in a desired pattern of light conductors (16, 18, 20), washing away the unexposed liquid plastic, and coating the conductors thus formed with reflective metal or cladding resin. The index of refraction for the cladding (22) is selected to be lower than for the conductors so that light in the conductors will be reflected by the interface with the cladding. For multiple level conductors, as where one conductor must cross over another, the process may be repeated to fabricate a bridge with columns (24, 26) of conductors to the next level, and conductor (28) between the columns. For more efficient transfer of energy over the bridge, faces at 45.degree. may be formed to reflect light up and across the bridge.

Smart image sensors: an emerging key technology for advanced optical measurement and microsystems

NASA Astrophysics Data System (ADS)

Seitz, Peter

1996-08-01

Optical microsystems typically include photosensitive devices, analog preprocessing circuitry and digital signal processing electronics. The advances in semiconductor technology have made it possible today to integrate all photosensitive and electronical devices on one 'smart image sensor' or photo-ASIC (application-specific integrated circuits containing photosensitive elements). It is even possible to provide each 'smart pixel' with additional photoelectronic functionality, without compromising the fill factor substantially. This technological capability is the basis for advanced cameras and optical microsystems showing novel on-chip functionality: Single-chip cameras with on- chip analog-to-digital converters for less than $10 are advertised; image sensors have been developed including novel functionality such as real-time selectable pixel size and shape, the capability of performing arbitrary convolutions simultaneously with the exposure, as well as variable, programmable offset and sensitivity of the pixels leading to image sensors with a dynamic range exceeding 150 dB. Smart image sensors have been demonstrated offering synchronous detection and demodulation capabilities in each pixel (lock-in CCD), and conventional image sensors are combined with an on-chip digital processor for complete, single-chip image acquisition and processing systems. Technological problems of the monolithic integration of smart image sensors include offset non-uniformities, temperature variations of electronic properties, imperfect matching of circuit parameters, etc. These problems can often be overcome either by designing additional compensation circuitry or by providing digital correction routines. Where necessary for technological or economic reasons, smart image sensors can also be combined with or realized as hybrids, making use of commercially available electronic components. It is concluded that the possibilities offered by custom smart image sensors will influence the design and the performance of future electronic imaging systems in many disciplines, reaching from optical metrology to machine vision on the factory floor and in robotics applications.

A 30 GHz monolithic receive module technology assessment

NASA Technical Reports Server (NTRS)

Geddes, J.; Sokolov, V.; Bauhahn, P.; Contolatis, T.

1988-01-01

This report is a technology assessment relevant to the 30 GHz Monolithic Receive Module development. It is based on results obtained on the present NASA Contract (NAS3-23356) as well as on information gathered from literature and other industry sources. To date the on-going Honeywell program has concentrated on demonstrating the so-called interconnected receive module which consists of four monolithic chips - the low noise front-end amplifier (LNA), the five bit phase shifter (PS), the gain control amplifier (GC), and the RF to IF downconverter (RF/IF). Results on all four individual chips have been obtained and interconnection of the first three functions has been accomplished. Future work on this contract is aimed at a higher level of integration, i.e., integration of the first three functions (LNA + PS + GC) on a single GaAs chip. The report presents the status of this technology and projections of its future directions.

Design, fabrication, and characterization of high density silicon photonic components

NASA Astrophysics Data System (ADS)

Jones, Adam Michael

Our burgeoning appetite for data relentlessly demands exponential scaling of computing and communications resources leading to an overbearing and ever-present drive to improve eciency while reducing on-chip area even as photonic components expand to ll application spaces no longer satised by their electronic counterparts. With a high index contrast, low optical loss, and compatibility with the CMOS fabrication infrastructure, silicon-on-insulator technology delivers a mechanism by which ecient, sub-micron waveguides can be fabricated while enabling monolithic integration of photonic components and their associated electronic infrastructure. The result is a solution leveraging the superior bandwidth of optical signaling on a platform capable of delivering the optical analogue to Moore's Law scaling of transistor density. Device size is expected to end Moore's Law scaling in photonics as Maxwell's equations limit the extent to which this parameter may be reduced. The focus of the work presented here surrounds photonic device miniaturization and the development of 3D optical interconnects as approaches to optimize performance in densely integrated optical interconnects. In this dissertation, several technological barriers inhibiting widespread adoption of photonics in data communications and telecommunications are explored. First, examination of loss and crosstalk performance in silicon nitride over SOI waveguide crossings yields insight into the feasibility of 3D optical interconnects with the rst experimental analysis of such a structure presented herein. A novel measurement platform utilizing a modied racetrack resonator is then presented enabling extraction of insertion loss data for highly ecient structures while requiring minimal on-chip area. Finally, pioneering work in understanding the statistical nature of doublet formation in microphotonic resonators is delivered with the resulting impact on resonant device design detailed.

OpTIIX: An ISS-Based Testbed Paving the Roadmap Toward a Next Generation Large Aperture UV/Optical Space Telescope

NASA Technical Reports Server (NTRS)

Carpenter, Kenneth G.; Etemad, Shar; Seery, Bernard D.; Thronson, Harley; Burdick, Gary M.; Coulter, Dan; Goullioud, Renaud; Green, Joseph J.; Liu, Fengchuan; Ess, Kim;

Design Fabrication and Characterization of High Density Silicon Photonic Components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jones, Adam

2015-02-01

Our burgeoning appetite for data relentlessly demands exponential scaling of computing and communications resources leading to an overbearing and ever-present drive to improve e ciency while reducing on-chip area even as photonic components expand to ll application spaces no longer satis ed by their electronic counterparts. With a high index contrast, low optical loss, and compatibility with the CMOS fabrication infrastructure, silicon-on-insulator technology delivers a mechanism by which e cient, sub-micron waveguides can be fabricated while enabling monolithic integration of photonic components and their associated electronic infrastructure. The result is a solution leveraging the superior bandwidth of optical signaling onmore » a platform capable of delivering the optical analogue to Moore's Law scaling of transistor density. Device size is expected to end Moore's Law scaling in photonics as Maxwell's equations limit the extent to which this parameter may be reduced. The focus of the work presented here surrounds photonic device miniaturization and the development of 3D optical interconnects as approaches to optimize performance in densely integrated optical interconnects. In this dissertation, several technological barriers inhibiting widespread adoption of photonics in data communications and telecommunications are explored. First, examination of loss and crosstalk performance in silicon nitride over SOI waveguide crossings yields insight into the feasibility of 3D optical interconnects with the rst experimental analysis of such a structure presented herein. A novel measurement platform utilizing a modi ed racetrack resonator is then presented enabling extraction of insertion loss data for highly e cient structures while requiring minimal on-chip area. Finally, pioneering work in understanding the statistical nature of doublet formation in microphotonic resonators is delivered with the resulting impact on resonant device design detailed.« less

Monolithic integration of active and second-order nonlinear functionality in Bragg reflection waveguides

NASA Astrophysics Data System (ADS)

Bijlani, Bhavin J.

2011-07-01

This thesis explored the theory, design, fabrication and characterization of AlGaAs Bragg reflection waveguides (BRW) towards the goal of a platform for monolithic integration of active and optically nonlinear devices. Through integration of a diode laser and nonlinear phase-matched cavity, the possibility of on-chip nonlinear frequency generation was explored. Such integrated devices would be highly useful as a robust, alignment free, small footprint and electrically injected alternative to bulk optic systems. A theoretical framework for modal analysis of arbitrary 1-D photonic crystal defect waveguides is developed. This method relies on the transverse resonance condition. It is then demonstrated in the context of several types of Bragg reflection waveguides. The framework is then extended to phase-match second-order nonlinearities and incorporating quantum-wells for diode lasers. Experiments within a slab and ridge waveguide demonstrated phase-matched Type-I second harmonic generation at fundamental wavelength of 1587 and 1600 nm, respectively; a first for this type of waveguide. For the slab waveguide, conversion efficiency was 0.1 %/W. In the more strongly confined ridge waveguides, efficiency increased to 8.6 %/W owing to the increased intensity. The normalized conversion efficiency was estimated to be at 600 %/Wcm2. Diode lasers emitting at 980 nm in the BRW mode were also fabricated. Verification of the Bragg mode was performed through imaging the near- field of the mode. Propagation loss of this type of mode was measured directly for the first time at ≈ 14 cm-1. The lasers were found to be very insensitive with characteristic temperature at 215 K. Two designs incorporating both laser and phase-matched nonlinearity within the same cavity were fabricated, for degenerate and non-degenerate down-conversion. Though the lasers were sub-optimal, a parametric fluorescence signal was readily detected. Fluorescence power as high as 4 nW for the degenerate design and 5 nW for the non-degenerate design were detected. The conversion efficiency was 4176 %/Wcm2 and 874 %/Wcm2, respectively. Neither design was found to emit near the design wavelength. In general, the signal is between 1600-1800 nm and the idler is between 2200-2400 nm. Improvements in laser performance are expected to drastically increase the conversion efficiency.

Integrated electrokinetically driven microfluidic devices with pH-mediated solid-phase extraction coupled to microchip electrophoresis for preterm birth biomarkers.

PubMed

Sonker, Mukul; Knob, Radim; Sahore, Vishal; Woolley, Adam T

2017-07-01

Integration in microfluidics is important for achieving automation. Sample preconcentration integrated with separation in a microfluidic setup can have a substantial impact on rapid analysis of low-abundance disease biomarkers. Here, we have developed a microfluidic device that uses pH-mediated solid-phase extraction (SPE) for the enrichment and elution of preterm birth (PTB) biomarkers. Furthermore, this SPE module was integrated with microchip electrophoresis for combined enrichment and separation of multiple analytes, including a PTB peptide biomarker (P1). A reversed-phase octyl methacrylate monolith was polymerized as the SPE medium in polyethylene glycol diacrylate modified cyclic olefin copolymer microfluidic channels. Eluent for pH-mediated SPE of PTB biomarkers on the monolith was optimized using different pH values and ionic concentrations. Nearly 50-fold enrichment was observed in single channel SPE devices for a low nanomolar solution of P1, with great elution time reproducibility (<7% RSD). The monolith binding capacity was determined to be 400 pg (0.2 pmol). A mixture of a model peptide (FA) and a PTB biomarker (P1) was extracted, eluted, injected, and then separated by microchip electrophoresis in our integrated device with ∼15-fold enrichment. This device shows important progress towards an integrated electrokinetically operated platform for preconcentration and separation of biomarkers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monolithic integration of fine cylindrical glass microcapillaries on silicon for electrophoretic separation of biomolecules

PubMed Central

Cao, Zhen; Ren, Kangning; Wu, Hongkai; Yobas, Levent

2012-01-01

We demonstrate monolithic integration of fine cylindrical glass microcapillaries (diameter ∼1 μm) on silicon and evaluate their performance for electrophoretic separation of biomolecules. Such microcapillaries are achieved through thermal reflow of a glass layer on microstructured silicon whereby slender voids are moulded into cylindrical tubes. The process allows self-enclosed microcapillaries with a uniform profile. A simplified method is also described to integrate the microcapillaries with a sample-injection cross without the requirement of glass etching. The 10-mm-long microcapillaries sustain field intensities up to 90 kV/m and limit the temperature excursions due to Joule heating to a few degrees Celsius only. PMID:23874369

Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

NASA Astrophysics Data System (ADS)

Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei

2015-03-01

We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.

Effects of ambient temperature changes on integral bridges.

DOT National Transportation Integrated Search

2008-09-01

Integral bridges (IBs) are jointless bridges whereby the deck is continuous and monolithic with abutment walls. IBs are outperforming their non-integral counterparts in economy and safety. Their principal advantages are derived from the absence of ex...

Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

PubMed

Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

2017-02-01

Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monolithic crystalline cladding microstructures for efficient light guiding and beam manipulation in passive and active regimes

PubMed Central

Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R.; Castillo, Gabriel R.; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng

2014-01-01

Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips. PMID:25100561

Fabrication of Zirconia-Reinforced Lithium Silicate Ceramic Restorations Using a Complete Digital Workflow

PubMed Central

Rödiger, Matthias; Ziebolz, Dirk; Schmidt, Anne-Kathrin

2015-01-01

This case report describes the fabrication of monolithic all-ceramic restorations using zirconia-reinforced lithium silicate (ZLS) ceramics. The use of powder-free intraoral scanner, generative fabrication technology of the working model, and CAD/CAM of the restorations in the dental laboratory allows a completely digitized workflow. The newly introduced ZLS ceramics offer a unique combination of fracture strength (>420 MPa), excellent optical properties, and optimum polishing characteristics, thus making them an interesting material option for monolithic restorations in the digital workflow. PMID:26509088

Phased Arrays 1985 Symposium - Proceedings

DTIC Science & Technology

1985-08-01

have served the logic industry well, and appropriate versions can do the same for micruwdve drid millimeter * wave technology, An aspect of phased...continuing revolutions of the logic industry and the microwave monolithic integrated circuit community are bringing relevant technology closer to the array...monolithic phased array antennas, and discuss their relative advantages and disadvantages . Considerations such as bandwidth, maxianiru scan range, feed

Electrically driven monolithic subwavelength plasmonic interconnect circuits

PubMed Central

Liu, Yang; Zhang, Jiasen; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2017-01-01

In the post-Moore era, an electrically driven monolithic optoelectronic integrated circuit (OEIC) fabricated from a single material is pursued globally to enable the construction of wafer-scale compact computing systems with powerful processing capabilities and low-power consumption. We report a monolithic plasmonic interconnect circuit (PIC) consisting of a photovoltaic (PV) cascading detector, Au-strip waveguides, and electrically driven surface plasmon polariton (SPP) sources. These components are fabricated from carbon nanotubes (CNTs) via a CMOS (complementary metal-oxide semiconductor)–compatible doping-free technique in the same feature size, which can be reduced to deep-subwavelength scale (~λ/7 to λ/95, λ = 1340 nm) compared with the 14-nm technique node. An OEIC could potentially be configured as a repeater for data transport because of its “photovoltaic” operation mode to transform SPP energy directly into electricity to drive subsequent electronic circuits. Moreover, chip-scale throughput capability has also been demonstrated by fabricating a 20 × 20 PIC array on a 10 mm × 10 mm wafer. Tailoring photonics for monolithic integration with electronics beyond the diffraction limit opens a new era of chip-level nanoscale electronic-photonic systems, introducing a new path to innovate toward much faster, smaller, and cheaper computing frameworks. PMID:29062890

Effectively Single-Mode Self-Recovering Ultrafast Nonlinear Nanowire Surface Plasmons

NASA Astrophysics Data System (ADS)

Tuniz, Alessandro; Weidlich, Stefan; Schmidt, Markus A.

2018-04-01

We report on a regime for surface-plasmon propagation, which is robust to defects and effectively single mode, and we exploit it for accessing the ultrafast nonlinear response of gold on centimeter-long subwavelength-diameter cylindrical nanowires. The hybrid plasmonic-photonic platform is formed by a gold nanowire, monolithically integrated into the core of an optical fiber. We show that, despite the dual-waveguide nature of this structure, the long-range surface plasmon is the only effectively propagating mode in the near infrared, which self-recovers in the presence of gaps via a light-recapturing effect. This self-recovery overcomes detrimental effects of wire discontinuities and enables measurements of the ultrafast nonlinearity of gold, which we perform for a 28-fs pulse duration.

Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gauthier, J.-P.; Almosni, S.; Léger, Y.

We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.

Tunable microwave generation of a monolithic dual-wavelength distributed feedback laser.

PubMed

Lo, Yen-Hua; Wu, Yu-Chang; Hsu, Shun-Chieh; Hwang, Yi-Chia; Chen, Bai-Ci; Lin, Chien-Chung

2014-06-02

The dynamic behavior of a monolithic dual-wavelength distributed feedback laser was fully investigated and mapped. The combination of different driving currents for master and slave lasers can generate a wide range of different operational modes, from single mode, period 1 to chaos. Both the optical and microwave spectrum were recorded and analyzed. The detected single mode signal can continuously cover from 15GHz to 50GHz, limited by photodetector bandwidth. The measured optical four-wave-mixing pattern indicates that a 70GHz signal can be generated by this device. By applying rate equation analysis, the important laser parameters can be extracted from the spectrum. The extracted relaxation resonant frequency is found to be 8.96GHz. With the full operational map at hand, the suitable current combination can be applied to the device for proper applications.

Shape-anchored porous polymer monoliths for integrated online solid-phase extraction-microchip electrophoresis-electrospray ionization mass spectrometry.

PubMed

Nordman, Nina; Barrios-Lopez, Brianda; Laurén, Susanna; Suvanto, Pia; Kotiaho, Tapio; Franssila, Sami; Kostiainen, Risto; Sikanen, Tiina

2015-02-01

We report a simple protocol for fabrication of shape-anchored porous polymer monoliths (PPMs) for on-chip SPE prior to online microchip electrophoresis (ME) separation and on-chip (ESI/MS). The chip design comprises a standard ME separation channel with simple cross injector and a fully integrated ESI emitter featuring coaxial sheath liquid channel. The monolith zone was prepared in situ at the injection cross by laser-initiated photopolymerization through the microchip cover layer. The use of high-power laser allowed not only maskless patterning of a precisely defined monolith zone, but also faster exposure time (here, 7 min) compared with flood exposure UV lamps. The size of the monolith pattern was defined by the diameter of the laser output (∅500 μm) and the porosity was geared toward high through-flow to allow electrokinetic actuation and thus avoid coupling to external pumps. Placing the monolith at the injection cross enabled firm anchoring based on its cross-shape so that no surface premodification with anchoring linkers was needed. In addition, sample loading and subsequent injection (elution) to the separation channel could be performed similar to standard ME setup. As a result, 15- to 23-fold enrichment factors were obtained already at loading (preconcentration) times as short as 25 s without sacrificing the throughput of ME analysis. The performance of the SPE-ME-ESI/MS chip was repeatable within 3.1% and 11.5% RSD (n = 3) in terms of migration time and peak height, respectively, and linear correlation was observed between the loading time and peak area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.

This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

Slow-wave propagation on monolithic microwave integrated circuits with layered and non-layered structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tzuang, C.K.C.

1986-01-01

Various MMIC (monolithic microwave integrated circuit) planar waveguides have shown possible existence of a slow-wave propagation. In many practical applications of these slow-wave circuits, the semiconductor devices have nonuniform material properties that may affect the slow-wave propagation. In the first part of the dissertation, the effects of the nonuniform material properties are studied by a finite-element method. In addition, the transient pulse excitations of these slow-wave circuits also have great theoretical and practical interests. In the second part, the time-domain analysis of a slow-wave coplanar waveguide is presented.

High-accuracy fiber-optic shape sensing

NASA Astrophysics Data System (ADS)

Duncan, Roger G.; Froggatt, Mark E.; Kreger, Stephen T.; Seeley, Ryan J.; Gifford, Dawn K.; Sang, Alexander K.; Wolfe, Matthew S.

2007-04-01

We describe the results of a study of the performance characteristics of a monolithic fiber-optic shape sensor array. Distributed strain measurements in a multi-core optical fiber interrogated with the optical frequency domain reflectometry technique are used to deduce the shape of the optical fiber; referencing to a coordinate system yields position information. Two sensing techniques are discussed herein: the first employing fiber Bragg gratings and the second employing the intrinsic Rayleigh backscatter of the optical fiber. We have measured shape and position under a variety of circumstances and report the accuracy and precision of these measurements. A discussion of error sources is included.

External control of semiconductor nanostructure lasers

NASA Astrophysics Data System (ADS)

Naderi, Nader A.

2011-12-01

Novel semiconductor nanostructure laser diodes such as quantum-dot and quantum-dash are key optoelectronic candidates for many applications such as data transmitters in ultra fast optical communications. This is mainly due to their unique carrier dynamics compared to conventional quantum-well lasers that enables their potential for high differential gain and modified linewidth enhancement factor. However, there are known intrinsic limitations associated with semiconductor laser dynamics that can hinder the performance including the mode stability, spectral linewidth, and direct modulation capabilities. One possible method to overcome these limitations is through the use of external control techniques. The electrical and/or optical external perturbations can be implemented to improve the parameters associated with the intrinsic laser's dynamics, such as threshold gain, damping rate, spectral linewidth, and mode selectivity. In this dissertation, studies on the impact of external control techniques through optical injection-locking, optical feedback and asymmetric current bias control on the overall performance of the nanostructure lasers were conducted in order to understand the associated intrinsic device limitations and to develop strategies for controlling the underlying dynamics to improve laser performance. In turn, the findings of this work can act as a guideline for making high performance nanostructure lasers for future ultra fast data transmitters in long-haul optical communication systems, and some can provide an insight into making a compact and low-cost terahertz optical source for future implementation in monolithic millimeter-wave integrated circuits.

Resonant light emission from uniaxially tensile-strained Ge microbridges

NASA Astrophysics Data System (ADS)

Zhou, Peiji; Xu, Xuejun; Matsushita, Sho; Sawano, Kentarou; Maruizumi, Takuya

2018-04-01

A highly strained germanium microbridge is a promising platform for realizing monolithically integrated lasers on a silicon substrate. However, it remains challenging to combine it with optical resonators. Here, we have observed resonant light emission peaks with Q-factors of about 180 in room-temperature photoluminescence spectra from uniaxially tensile-strained germanium microbridges. These peaks are found to correspond to the resonance in Fabry–Perot (FP) cavities formed transversely to the uniaxial stress axis. On the basis of this phenomenon, we design a Fabry–Perot cavity by adding distributed Bragg reflectors (DBRs) laterally to the microbridge. With this design, the optical performance can be optimized without disturbing to the mechanical structure. A Q-factor as high as 1400 is obtained from numerical simulation. Moreover, we prove by theoretical analysis deduction and calculation that the lateral structure will not decrease the strain, unlike the on-pad DBR structure. The structure thus provides a promising solution for the realization of highly strained germanium lasers in the future.

NASA Tech Briefs, February 2010

NASA Technical Reports Server (NTRS)

2010-01-01

Topics covered include: Insulation-Testing Cryostat With Lifting Mechanism; Optical Testing of Retroreflectors for Cryogenic Applications; Measuring Cyclic Error in Laser Heterodyne Interferometers; Self-Referencing Hartmann Test for Large-Aperture Telescopes; Measuring a Fiber-Optic Delay Line Using a Mode-Locked Laser; Reconfigurable Hardware for Compressing Hyperspectral Image Data; Spatio-Temporal Equalizer for a Receiving-Antenna Feed Array; High-Speed Ring Bus; Nanoionics-Based Switches for Radio-Frequency Applications; Lunar Dust-Tolerant Electrical Connector; Compact, Reliable EEPROM Controller; Quad-Chip Double-Balanced Frequency Tripler; Ka-Band Waveguide Two-Way Hybrid Combiner for MMIC Amplifiers; Radiation-Hardened Solid-State Drive; Use of Nanofibers to Strengthen Hydrogels of Silica, Other Oxides, and Aerogels; Two Concepts for Deployable Trusses; Concentric Nested Toroidal Inflatable Structures; Investigating Dynamics of Eccentricity in Turbomachines; Improved Low-Temperature Performance of Li-Ion Cells Using New Electrolytes; Integrity Monitoring of Mercury Discharge Lamps; White-Light Phase-Conjugate Mirrors as Distortion Correctors; Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer; ICER-3D Hyperspectral Image Compression Software; and Context Modeler for Wavelet Compression of Spectral Hyperspectral Images.

A Multi-Wavelength IR Laser for Space Applications

NASA Technical Reports Server (NTRS)

Li, Steven X.; Yu, Anthony W.; Sun, Xiaoli; Fahey, Molly E.; Numata, Kenji; Krainak, Michael A.

2017-01-01

We present a laser technology development with space flight heritage to generate laser wavelengths in the near- to mid-infrared (NIR to MIR) for space lidar applications. Integrating an optical parametric crystal to the LOLA (Lunar Orbiter Laser Altimeter) laser transmitter design affords selective laser wavelengths from NIR to MIR that are not easily obtainable from traditional diode pumped solid-state lasers. By replacing the output coupler of the LOLA laser with a properly designed parametric crystal, we successfully demonstrated a monolithic intra-cavity optical parametric oscillator (iOPO) laser based on all high technology readiness level (TRL) subsystems and components. Several desired wavelengths have been generated including 2.1 microns, 2.7 microns and 3.4 microns. This laser can also be used in trace-gas remote sensing, as many molecules possess their unique vibrational transitions in NIR to MIR wavelength region, as well as in time-of-flight mass spectrometer where desorption of samples using MIR laser wavelengths have been successfully demonstrated.

A multi-wavelength IR laser for space applications

NASA Astrophysics Data System (ADS)

Li, Steven X.; Yu, Anthony W.; Sun, Xiaoli; Fahey, Molly E.; Numata, Kenji; Krainak, Michael A.

2017-05-01

We present a laser technology development with space flight heritage to generate laser wavelengths in the near- to midinfrared (NIR to MIR) for space lidar applications. Integrating an optical parametric crystal to the LOLA (Lunar Orbiter Laser Altimeter) laser transmitter design affords selective laser wavelengths from NIR to MIR that are not easily obtainable from traditional diode pumped solid-state lasers. By replacing the output coupler of the LOLA laser with a properly designed parametric crystal, we successfully demonstrated a monolithic intra-cavity optical parametric oscillator (iOPO) laser based on all high technology readiness level (TRL) subsystems and components. Several desired wavelengths have been generated including 2.1 µm, 2.7 μm and 3.4 μm. This laser can also be used in trace-gas remote sensing, as many molecules possess their unique vibrational transitions in NIR to MIR wavelength region, as well as in time-of-flight mass spectrometer where desorption of samples using MIR laser wavelengths have been successfully demonstrated

Development of FIR arrays with integrating amplifiers

NASA Technical Reports Server (NTRS)

Young, Erick T.

1988-01-01

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Development of FIR arrays with integrating amplifiers

NASA Astrophysics Data System (ADS)

Young, Erick T.

1988-08-01

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Gel-based morphological design of zirconium metal–organic frameworks† †Electronic supplementary information (ESI) available: Optical microscopy, PDF TGA, Hg intrusion, nanoindentation, gels of various Zr-MOFs, oil-drop process. See DOI: 10.1039/c6sc05602d Click here for additional data file.

PubMed Central

Bueken, Bart; Van Velthoven, Niels; Willhammar, Tom; Stassin, Timothée; Stassen, Ivo; Keen, David A.; Baron, Gino V.; Denayer, Joeri F. M.; Ameloot, Rob; Bals, Sara

2017-01-01

The ability of metal–organic frameworks (MOFs) to gelate under specific synthetic conditions opens up new opportunities in the preparation and shaping of hierarchically porous MOF monoliths, which could be directly implemented for catalytic and adsorptive applications. In this work, we present the first examples of xero- or aerogel monoliths consisting solely of nanoparticles of several prototypical Zr4+-based MOFs: UiO-66-X (X = H, NH2, NO2, (OH)2), UiO-67, MOF-801, MOF-808 and NU-1000. High reactant and water concentrations during synthesis were observed to induce the formation of gels, which were converted to monolithic materials by drying in air or supercritical CO2. Electron microscopy, combined with N2 physisorption experiments, was used to show that irregular nanoparticle packing leads to pure MOF monoliths with hierarchical pore systems, featuring both intraparticle micropores and interparticle mesopores. Finally, UiO-66 gels were shaped into monolithic spheres of 600 μm diameter using an oil-drop method, creating promising candidates for packed-bed catalytic or adsorptive applications, where hierarchical pore systems can greatly mitigate mass transfer limitations. PMID:28553536

New porous monolithic membranes based on supported ionic liquid-like phases for oil/water separation and homogenous catalyst immobilisation.

PubMed

Porcar, Raúl; Nuevo, Daniel; García-Verdugo, Eduardo; Lozano, Pedro; Sanchez-Marcano, José; Burguete, M Isabel; Luis, Santiago V

2018-03-07

Porous monolithic advanced functional materials based on supported ionic liquid-like phase (SILLP) systems were used for the preparation of oleophilic and hydrophobic cylindrical membranes and successfully tested as eco-friendly and safe systems for oil/water separation and for the continuous integration of catalytic and separation processes in an aqueous-organic biphasic reaction system.

Optical properties and light irradiance of monolithic zirconia at variable thicknesses.

PubMed

Sulaiman, Taiseer A; Abdulmajeed, Aous A; Donovan, Terrence E; Ritter, André V; Vallittu, Pekka K; Närhi, Timo O; Lassila, Lippo V

2015-10-01

The aims of this study were to: (1) estimate the effect of polishing on the surface gloss of monolithic zirconia, (2) measure and compare the translucency of monolithic zirconia at variable thicknesses, and (3) determine the effect of zirconia thickness on irradiance and total irradiant energy. Four monolithic partially stabilized zirconia (PSZ) brands; Prettau® (PRT, Zirkonzahn), Bruxzir® (BRX, Glidewell), Zenostar® (ZEN, Wieland), Katana® (KAT, Noritake), and one fully stabilized zirconia (FSZ); Prettau Anterior® (PRTA, Zirkonzahn) were used to fabricate specimens (n=5/subgroup) with different thicknesses (0.5, 0.7, 1.0, 1.2, 1.5, and 2.0mm). Zirconia core material ICE® Zircon (ICE, Zirkonzahn) was used as a control. Surface gloss and translucency were evaluated using a reflection spectrophotometer. Irradiance and total irradiant energy transmitted through each specimen was quantified using MARC® Resin Calibrator. All specimens were then subjected to a standardized polishing method and the surface gloss, translucency, irradiance, and total irradiant energy measurements were repeated. Statistical analysis was performed using two-way ANOVA and post-hoc Tukey's tests (p<0.05). Surface gloss was significantly affected by polishing (p<0.05), regardless of brand and thickness. Translucency values ranged from 5.65 to 20.40 before polishing and 5.10 to 19.95 after polishing. The ranking from least to highest translucent (after polish) was: BRX=ICE=PRT

Exploratory High-Fidelity Aerostructural Optimization Using an Efficient Monolithic Solution Method

NASA Astrophysics Data System (ADS)

Zhang, Jenmy Zimi

This thesis is motivated by the desire to discover fuel efficient aircraft concepts through exploratory design. An optimization methodology based on tightly integrated high-fidelity aerostructural analysis is proposed, which has the flexibility, robustness, and efficiency to contribute to this goal. The present aerostructural optimization methodology uses an integrated geometry parameterization and mesh movement strategy, which was initially proposed for aerodynamic shape optimization. This integrated approach provides the optimizer with a large amount of geometric freedom for conducting exploratory design, while allowing for efficient and robust mesh movement in the presence of substantial shape changes. In extending this approach to aerostructural optimization, this thesis has addressed a number of important challenges. A structural mesh deformation strategy has been introduced to translate consistently the shape changes described by the geometry parameterization to the structural model. A three-field formulation of the discrete steady aerostructural residual couples the mesh movement equations with the three-dimensional Euler equations and a linear structural analysis. Gradients needed for optimization are computed with a three-field coupled adjoint approach. A number of investigations have been conducted to demonstrate the suitability and accuracy of the present methodology for use in aerostructural optimization involving substantial shape changes. Robustness and efficiency in the coupled solution algorithms is crucial to the success of an exploratory optimization. This thesis therefore also focuses on the design of an effective monolithic solution algorithm for the proposed methodology. This involves using a Newton-Krylov method for the aerostructural analysis and a preconditioned Krylov subspace method for the coupled adjoint solution. Several aspects of the monolithic solution method have been investigated. These include appropriate strategies for scaling and matrix-vector product evaluation, as well as block preconditioning techniques that preserve the modularity between subproblems. The monolithic solution method is applied to problems with varying degrees of fluid-structural coupling, as well as a wing span optimization study. The monolithic solution algorithm typically requires 20%-70% less computing time than its partitioned counterpart. This advantage increases with increasing wing flexibility. The performance of the monolithic solution method is also much less sensitive to the choice of the solution parameter.

Flexural strength and reliability of monolithic and trilayer ceramic structures obtained by the CAD-on technique.

PubMed

Basso, G R; Moraes, R R; Borba, M; Griggs, J A; Della Bona, A

2015-12-01

To evaluate the flexural strength, Weibull modulus, fracture toughness, and failure behavior of ceramic structures obtained by the CAD-on technique, testing the null hypothesis that trilayer structures show similar properties to monolithic structures. Bar-shaped (1.8mm×4mm×16mm) monolithic specimens of zirconia (IPS e.max ZirCAD - Ivoclar Vivadent) and trilayer specimens of zirconia/fusion ceramic/lithium dissilicate (IPS e.max ZirCAD/IPS e.max CAD Crystall./Connect/IPS e.max CAD, Ivoclar Vivadent) were fabricated (n=30). Specimens were tested in flexure in 37°C deionized water using a universal testing machine at a crosshead speed of 0.5mm/min. Failure loads were recorded, and the flexural strength values were calculated. Fractography principles were used to examine the fracture surfaces under optical and scanning electron microscopy. Data were statistically analyzed using Student's t-test and Weibull statistics (α=0.05). Monolithic and trilayer specimens showed similar mean flexural strengths, characteristic strengths, and Weibull moduli. Trilayer structures showed greater mean critical flaw and fracture toughness values than monolithic specimens (p<0.001). Most critical flaws in the trilayer groups were located on the Y-TZP surface subjected to tension and propagated catastrophically. Trilayer structures showed no flaw deflection at the interface. Considering the CAD-on technique, the trilayer structures showed greater fracture toughness than the monolithic zirconia specimens. Copyright © 2015 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Heterogeneous integration of low-temperature metal-oxide TFTs

NASA Astrophysics Data System (ADS)

Schuette, Michael L.; Green, Andrew J.; Leedy, Kevin D.; McCandless, Jonathan P.; Jessen, Gregg H.

2017-02-01

The breadth of circuit fabrication opportunities enabled by metal-oxide thin-film transistors (MO-TFTs) is unprecedented. Large-area deposition techniques and high electron mobility are behind their adoption in the display industry, and substrate agnosticism and low process temperatures enabled the present wave of flexible electronics research. Reports of circuits involving complementaryMO-TFTs, oxide-organic hybrid combinations, and even MO-TFTs integrated onto Si LSI back end of line interconnects demonstrate this technology's utility in 2D and 3D monolithic heterogeneous integration (HI). In addition to a brief literature review focused on functional HI between MO-TFTs and a variety of dissimilar active devices, we share progress toward integrating MO-TFTs with compound semiconductor devices, namely GaN HEMTs. A monolithically integrated cascode topology was used to couple a HEMT's >200 V breakdown characteristic with the gate driving characteristic of an IGZO TFT, effectively shifting the HEMT threshold voltage from -3 V to +1 V.

Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Connolly, D. J.

1986-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

NASA Astrophysics Data System (ADS)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

Overview and Summary of Advanced UVOIR Mirror Technology Development (AMTD) Project

NASA Technical Reports Server (NTRS)

Stahl, H. Philip

2014-01-01

ASTRO2010 Decadal Survey stated that an advanced large-aperture ultraviolet, optical, near-infrared (UVOIR) telescope is required to enable the next generation of compelling astrophysics and exoplanet science; and, that present technology is not mature enough to affordably build and launch any potential UVOIR mission concept. AMTD is a multiyear effort to develop, demonstrate and mature critical technologies to TRL-6 by 2018 so that a viable flight mission can be proposed to the 2020 Decadal Review. AMTD builds on the state of art (SOA) defined by over 30 years of monolithic & segmented ground & space-telescope mirror technology to mature six key technologies: center dotLarge-Aperture, Low Areal Density, High Stiffness Mirror Substrates: Both (4 to 8 m) monolithic and (8 to 16 m) segmented telescopes require larger and stiffer mirrors. center dotSupport System: Large-aperture mirrors require large support systems to ensure that they survive launch, deploy on orbit, and maintain a stable, undistorted shape. center dotMid/High Spatial Frequency Figure Error: Very smooth mirror is critical for producing high-quality point spread function (PSF) for high contrast imaging. center dotSegment Edges: The quality of segment edges impacts PSF for high-contrast imaging applications, contributes to stray light noise, and affects total collecting aperture. center dotSegment to Segment Gap Phasing: Segment phasing is critical for producing high-quality temporally-stable PSF. center dotIntegrated Model Validation: On-orbit performance is driven by mechanical & thermal stability. Compliance cannot be 100% tested, but relies on modeling. Because we cannot predict the future, AMTD is pursuing multiple design paths to provide the science community with options to enable either large aperture monolithic or segmented mirrors with clear engineering metrics traceable to science requirements

Advanced UVOIR Mirror Technology Development (AMTD) for Very Large Space Telescopes

NASA Technical Reports Server (NTRS)

Postman, Marc; Soummer, Remi; Sivramakrishnan, Annand; Macintosh, Bruce; Guyon, Olivier; Krist, John; Stahl, H. Philip; Smith, W. Scott; Mosier, Gary; Kirk, Charles;

Characteristics of Various Photodiode Structures in CMOS Technology with Monolithic Signal Processing Electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukhopadhyay, Sourav; Chandratre, V. B.; Sukhwani, Menka

2011-10-20

Monolithic optical sensor with readout electronics are needed in optical communication, medical imaging and scintillator based gamma spectroscopy system. This paper presents the design of three different CMOS photodiode test structures and two readout channels in a commercial CMOS technology catering to the need of nuclear instrumentation. The three photodiode structures each of 1 mm{sup 2} with readout electronics are fabricated in 0.35 um, 4 metal, double poly, N-well CMOS process. These photodiode structures are based on available P-N junction of standard CMOS process i.e. N-well/P-substrate, P+/N-well/P-substrate and inter-digitized P+/N-well/P-substrate. The comparisons of typical characteristics among three fabricated photo sensorsmore » are reported in terms of spectral sensitivity, dark current and junction capacitance. Among the three photodiode structures N-well/P-substrate photodiode shows higher spectral sensitivity compared to the other two photodiode structures. The inter-digitized P+/N-well/P-substrate structure has enhanced blue response compared to N-well/P-substrate and P+/N-well/P-substrate photodiode. Design and test results of monolithic readout electronics, for three different CMOS photodiode structures for application related to nuclear instrumentation, are also reported.« less

Monolithic thulium-doped fiber laser

NASA Astrophysics Data System (ADS)

Aubrecht, J.; Peterka, P.; Honzátko, P.; Todorov, F.; Podrazký, O.; Kamrádek, M.; Proboštová, J.; Kašík, I.

2017-12-01

In this contribution we report and discuss the results of laser characterizations of experimental thulium-doped optical fibers. These active fibers were fabricated in house and were tested in two laser systems to verify their characteristics. The first one, a monolithic fiber laser, was of great interest to us due to its potentially lower overall resonator losses, improved laser lifetime and better robustness. The compact laser cavities with a Bragg gratings inscribed directly into the active optical fiber differs to the second laser system where the Bragg gratings were inscribed into a passive fiber which had to be spliced to the active fiber. The tested fibers were manufactured by the modified chemical vapor deposition method and a solution-doping of thulium ions with Al2O3 or alumina nanoparticles, respectively. We focused on comparison of laser output powers, slope efficiencies, and laser thresholds for particular thulium-doped fiber in different laser configurations.

Infrared photocurrent management in monolithic perovskite/silicon heterojunction tandem solar cells by using a nanocrystalline silicon oxide interlayer.

PubMed

Mazzarella, Luana; Werth, Matteo; Jäger, Klaus; Jošt, Marko; Korte, Lars; Albrecht, Steve; Schlatmann, Rutger; Stannowski, Bernd

2018-05-14

We performed optical simulations using hydrogenated nanocrystalline silicon oxide (nc-SiO x :H) as n-doped interlayer in monolithic perovskite/c-Si heterojunction tandem solar cells. Depending on the adjustable value of its refractive index (2.0 - 2.7) and thickness, nc-SiO x :H allows to optically manage the infrared light absorption in the c-Si bottom cell minimizing reflection losses. We give guidelines for nc-SiO x :H optimization in tandem devices in combination with a systematic investigation of the effect of the surface morphology (flat or textured) on the photocurrent density. For full-flat and rear textured devices, we found matched photocurrents higher than 19 and 20 mA/cm 2 , respectively, using a 90 nm nc-SiO x :H interlayer with a refractive index of 2.7.

Diode-pumped microchip Tm:KLu(WO₄)₂ laser with more than 3 W of output power.

PubMed

Serres, Josep Maria; Mateos, Xavier; Loiko, Pavel; Yumashev, Konstantin; Kuleshov, Nikolai; Petrov, Valentin; Griebner, Uwe; Aguiló, Magdalena; Díaz, Francesc

2014-07-15

A diode-pumped microchip laser containing a quasi-monolithic plano-plano cavity is realized on the basis of a Tm:KLu(WO₄)₂ crystal. The maximum CW output power is 3.2 W (at an absorbed pump power of 6.8 W) and the slope efficiency as high as 50.4%. The laser is operating at 1946 nm in the TEM₀₀ mode with a M²<1.05. Microchip operation with Tm:KLu(WO₄)₂ is, in principle, due to a special crystal cut along the N(g) optical indicatrix axis. This crystal cut possesses positive near-spherical thermal lens that provides the required mode stabilization in the plano-plano cavity. Sensitivity factors of the thermal lens, "generalized" thermo-optic coefficients and constants describing the photoelastic effect are determined for the monolithic Tm:KLu(WO₄)₂ crystal.

MMI-based MOEMS FT spectrometer for visible and IR spectral ranges

NASA Astrophysics Data System (ADS)

Al-Demerdash, Bassem M.; Medhat, Mostafa; Sabry, Yasser M.; Saadany, Bassam; Khalil, Diaa

2014-03-01

MEMS spectrometers have very strong potential in future healthcare and environmental monitoring applications, where Michelson interferometers are the core optical engine. Recently, MEMS Michelson interferometers based on using silicon interface as a beam splitter (BS) has been proposed [7, 8]. This allows having a monolithically-integrated on-chip FTIR spectrometer. However silicon BS exhibits high absorption loss in the visible range and high material dispersion in the near infrared (NIR) range. For this reason, we propose in this work a novel MOEMS interferometer allowing operation over wider spectral range covering both the infrared (IR) and the visible ranges. The proposed architecture is based on spatial splitting and combining of optical beams using the imaging properties of Multi-Mode Interference MMI waveguide. The proposed structure includes an optical splitter for spatial splitting an input beam into two beams and a combiner for spatial combining the two interferometer beams. A MEMS moveable mirror is provided to produce an optical path difference between the two beams. The new interferometer is fabricated using DRIE technology on an SOI wafer. The movable mirror is metalized and attached to a comb-drive actuator fabricated in the same lithography step in a self-aligned manner on chip. The novel interferometer is tested as a Fourier transform spectrometer. Red laser, IR laser and absorption spectra of different materials are measured with a resolution of 2.5 nm at 635-nm wavelength. The structure is a very compact one that allows its integration and fabrication on a large scale with very low cost.

The HSOB GAIA: a cryogenic high stability cesic optical bench for missions requiring sub-nanometric optical stability

NASA Astrophysics Data System (ADS)

Courteau, Pascal; Poupinet, Anne; Kroedel, Mathias; Sarri, Giuseppe

2017-11-01

Global astrometry, very demanding in term of stability, requires extremely stable material for optical bench. CeSiC developed by ECM and Alcatel Alenia Space for mirrors and high stability structures, offers the best compromise in term of structural strength, stability and very high lightweight capability, with characteristics leading to be insensitive to thermo-elastic at cryogenic T°. The HSOB GAIA study realised by Alcatel Alenia Space under ESA contract aimed to design, develop and test a full scale representative High Stability Optical Bench in CeSiC. The bench has been equipped with SAGEIS-CSO laser metrology system MOUSE1, Michelson interferometer composed of integrated optics with a nm resolution. The HSOB bench has been submitted to an homogeneous T° step under vacuum to characterise the homothetic behaviour of its two arms. The quite negligible inter-arms differential measured with a nm range reproducibility, demonstrates that a complete 3D structure in CeSiC has the same CTE homogeneity as characterisation samples, fully in line with the GAIA need (1pm at 120K). This participates to the demonstration that CeSiC properties at cryogenic T° is fully appropriate to the manufacturing of complex highly stable optical structures. This successful study confirms ECM and Alcatel Alenia Space ability to define and manufacture monolithic lightweight highly stable optical structures, based on inner cells triangular design made only possible by the unique CeSiC manufacturing process.

Chairside Fabrication of an All-Ceramic Partial Crown Using a Zirconia-Reinforced Lithium Silicate Ceramic

PubMed Central

Pabel, Anne-Kathrin; Rödiger, Matthias

2016-01-01

The chairside fabrication of a monolithic partial crown using a zirconia-reinforced lithium silicate (ZLS) ceramic is described. The fully digitized model-free workflow in a dental practice is possible due to the use of a powder-free intraoral scanner and the computer-aided design/computer-assisted manufacturing (CAD/CAM) of the restorations. The innovative ZLS material offers a singular combination of fracture strength (>370 Mpa), optimum polishing characteristics, and excellent optical properties. Therefore, this ceramic is an interesting alternative material for monolithic restorations produced in a digital workflow. PMID:27042362

Effect of pump polarization direction on power characteristics in monolithic microchip Nd:YAG dual-frequency laser.

PubMed

Chen, Hao; Zhang, Shulian; Tan, Yidong

2016-04-10

The pump polarization direction can greatly influence the characteristics of the laser diode end-pumped monolithic microchip Nd:YAG dual-frequency laser. We experimentally observe the lasing thresholds and the optical powers of two splitting modes versus the pump polarization direction. The effect of the pump-induced gain anisotropy on the mode oscillation sequence is analyzed. And the effect on the intensities of these modes is also proved with a rate equation model. This study contributes to the improvement of the stability and the reliability of the Nd:YAG dual-frequency laser.

Monolithic subwavelength high refractive-index-contrast grating VCSELs

NASA Astrophysics Data System (ADS)

Gebski, Marcin; Dems, Maciej; Lott, James A.; Czyszanowski, Tomasz

2016-03-01

In this paper we present optical design and simulation results of vertical-cavity surface-emitting lasers (VCSELs) that incorporate monolithic subwavelength high refractive-index-contrast grating (MHCG) mirrors - a new variety of HCG mirror that is composed of high index material surrounded only on one side by low index material. We show the impact of an MHCG mirror on the performance of 980 nm VCSELs designed for high bit rate and energy-efficient optical data communications. In our design, all or part of the all-semiconductor top coupling distributed Bragg reflector mirror is replaced by an undoped gallium-arsenide MHCG. We show how the optical field intensity distribution of the VCSEL's fundamental mode is controlled by the combination of the number of residual distributed Bragg reflector (DBR) mirror periods and the physical design of the topmost gallium-arsenide MHCG. Additionally, we numerically investigate the confinement factors of our VCSELs and show that this parameter for the MHCG DBR VCSELs may only be properly determined in two or three dimensions due to the periodic nature of the grating mirror.

Method of making and structure for monolithic optical circuits

NASA Technical Reports Server (NTRS)

Evanchuk, Vincent L. (Inventor)

1983-01-01

A method for making monolithic optical circuits, with related optical devices as required or desired, on a supporting surface (10) consists of coating the supporting surface with reflecting metal or cladding resin, spreading a layer of liquid radiation senstivie plastic (12) on the surface, exposing the liquid plastic with a mask (14) to cure it in a desired pattern of light conductors (16, 18, 20), washing away the unexposed liquid plastic, and coating the conductors thus formed with reflective metal or cladding resin. The index of refraction for the cladding (22) is selected to be lower than for the conductors so that light in the conductors will be reflected by the interface with the cladding. For multiple level conductors, as where one conductor must cross over another, the process may be repeated to fabricate a bridge with columns (24, 26) of conductors to the next level, and conductor (28) between the columns. For more efficient transfer of energy over the bridge, faces at 45.degree. may be formed to reflect light up and across the bridge.

Multiplexing 32,000 spectra onto 8 detectors: the HARMONI field splitting, image slicing, and wavelength selecting optics

NASA Astrophysics Data System (ADS)

Tecza, Matthias; Thatte, Niranjan; Clarke, Fraser; Freeman, David; Kosmalski, Johan

2012-09-01

HARMONI, the High Angular Resolution Monolithic Optical & Near-infrared Integral field spectrograph is one of two first-light instruments for the European Extremely Large Telescope. Over a 256x128 pixel field-of-view HARMONI will simultaneously measure approximately 32,000 spectra. Each spectrum is about 4000 spectral pixels long, and covers a selectable part of the 0.47-2.45 μm wavelength range at resolving powers of either R≍4000, 10000, or 20000. All 32,000 spectra are imaged onto eight HAWAII4RG detectors using a multiplexing scheme that divides the input field into four sub-fields, each imaged onto one image slicer that in turn re-arranges a single sub-field into two long exit slits feeding one spectrograph each. In total we require eight spectrographs, each with one HAWAII4RG detector. A system of articulated and exchangeable fold-mirrors and VPH gratings allows one to select different spectral resolving powers and wavelength ranges of interest while keeping a fixed geometry between the spectrograph collimator and camera avoiding the need for an articulated grating and camera. In this paper we describe both the field splitting and image slicing optics as well as the optics that will be used to select both spectral resolving power and wavelength range.

Double high refractive-index contrast grating VCSEL

NASA Astrophysics Data System (ADS)

Gebski, Marcin; Dems, Maciej; Wasiak, Michał; Sarzała, Robert P.; Lott, J. A.; Czyszanowski, Tomasz

2015-03-01

Distributed Bragg reflectors (DBRs) are typically used as the highly reflecting mirrors of vertical-cavity surface-emitting lasers (VCSELs). In order to provide optical field confinement, oxide apertures are often incorporated in the process of the selective wet oxidation of high aluminum-content DBR layers. This technology has some potential drawbacks such as difficulty in controlling the uniformity of the oxide aperture diameters across a large-diameter (≥ 6 inch) production wafers, high DBR series resistance especially for small diameters below about 5 μm despite elaborate grading and doping schemes, free carrier absorption at longer emission wavelengths in the p-doped DBRs, reduced reliability for oxide apertures placed close to the quantum wells, and low thermal conductivity for transporting heat away from the active region. A prospective alternative mirror is a high refractive index contrast grating (HCG) monolithically integrated with the VCSEL cavity. Two HCG mirrors potentially offer a very compact and simplified VCSEL design although the problems of resistance, heat dissipation, and reliability are not completely solved. We present an analysis of a double HCG 980 nm GaAs-based ultra-thin VCSEL. We analyze the optical confinement of such a structure with a total optical thickness is ~1.0λ including the optical cavity and the two opposing and parallel HCG mirrors.

Efficient Monolithic Perovskite/Silicon Tandem Solar Cell with Cell Area >1 cm(2).

PubMed

Werner, Jérémie; Weng, Ching-Hsun; Walter, Arnaud; Fesquet, Luc; Seif, Johannes Peter; De Wolf, Stefaan; Niesen, Bjoern; Ballif, Christophe

2016-01-07

Monolithic perovskite/crystalline silicon tandem solar cells hold great promise for further performance improvement of well-established silicon photovoltaics; however, monolithic tandem integration is challenging, evidenced by the modest performances and small-area devices reported so far. Here we present first a low-temperature process for semitransparent perovskite solar cells, yielding efficiencies of up to 14.5%. Then, we implement this process to fabricate monolithic perovskite/silicon heterojunction tandem solar cells yielding efficiencies of up to 21.2 and 19.2% for cell areas of 0.17 and 1.22 cm(2), respectively. Both efficiencies are well above those of the involved subcells. These single-junction perovskite and tandem solar cells are hysteresis-free and demonstrate steady performance under maximum power point tracking for several minutes. Finally, we present the effects of varying the intermediate recombination layer and hole transport layer thicknesses on tandem cell photocurrent generation, experimentally and by transfer matrix simulations.

A 30 Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit

NASA Astrophysics Data System (ADS)

Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Yuan, Wei; Zhu, Guixia; Zhu, Hongbo; Feng, Meixin; Sun, Qian; Liu, Yuhuai; Wang, Yongjin

2017-07-01

We propose, fabricate and characterize photonic integration of a InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide, ring resonator and InGaN/GaN MQW-photodiode on a single chip, in which the photonic circuit is suspended by the support beams. Both experimental observations and simulation results illustrate the manipulation of in-plane light coupling and propagation by the waveguide and the ring resonator. The monolithic photonic circuit forms an in-plane data communication system using visible light. When the two suspended InGaN/GaN MQW-diodes simultaneously serve as the transmitter and the receiver, an in-plane full-duplex light communication is experimentally demonstrated with a transmission rate of 30 Mbps, and the superimposed signals are extracted using the self-interference cancellation method. The suspended photonic circuit creates new possibilities for exploring the in-plane full-duplex light communication and manufacturing complex GaN-based monolithic photonic integrations.

Monolithic integrated high-T.sub.c superconductor-semiconductor structure

NASA Technical Reports Server (NTRS)

Barfknecht, Andrew T. (Inventor); Garcia, Graham A. (Inventor); Russell, Stephen D. (Inventor); Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Clayton, Stanley R. (Inventor)

2000-01-01

A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems

NASA Astrophysics Data System (ADS)

Ku, Walter H.

1987-08-01

This interim technical report presents results of research on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. A specific objective is to extend the state-of-the-art of the Computer Aided Design (CAD) of the monolithic microwave and millimeter wave integrated circuits (MIMIC). In this reporting period, we have derived a new model for the high electron mobility transistor (HEMT) based on a nonlinear charge control formulation which takes into consideration the variation of the 2DEG distance offset from the heterointerface as a function of bias. Pseudomorphic InGaAs/GaAs HEMT devices have been successfully fabricated at UCSD. For a 1 micron gate length, a maximum transconductance of 320 mS/mm was obtained. In cooperation with TRW, devices with 0.15 micron and 0.25 micron gate lengths have been successfully fabricated and tested. New results on the design of ultra-wideband distributed amplifiers using 0.15 micron pseudomorphic InGaAs/GaAs HEMT's have also been obtained. In addition, two-dimensional models of the submicron MESFET's, HEMT's and HBT's are currently being developed for the CRAY X-MP/48 supercomputer. Preliminary results obtained are also presented in this report.

Monlithic nonplanar ring oscillator and method

NASA Technical Reports Server (NTRS)

Nilsson, Alan C. (Inventor); Byer, Robert L. (Inventor)

1991-01-01

A monolithic nonplanar ring oscillator having an optically isotropic solid-state laser body for propagating laser radiation about a nonplanar ring path internal to the laser body is disclosed. The monolithic laser body is configured to produce a 2N reflection nonplanar ring light path, where N is an integer greater than or equal to 2, comprising 2N-1 total internal reflections and one reflection at a coupler in a single round trip. Undirectional traveling wave oscillation of the laser is induced by the geometry of the nonplanar ring path together with the effect of an applied magnetic field and partial polarizer characteristics of the oblique reflection from the coupler. The 6-reflection nonplanar ring oscillator makes possible otpimal unidirectional oscillation (low loss for the oscillating direction of propagation and, simultaneously high loss for the nonoscillating direction of propagation) in monolithic NPROs using materials with index of refraction smaller than the square root of 3, for example, laser glass.

X-ray pore optic developments

NASA Astrophysics Data System (ADS)

Wallace, Kotska; Bavdaz, Marcos; Collon, Maximilien; Beijersbergen, Marco; Kraft, Stefan; Fairbend, Ray; Séguy, Julien; Blanquer, Pascal; Graue, Roland; Kampf, Dirk

2017-11-01

In support of future x-ray telescopes ESA is developing new optics for the x-ray regime. To date, mass and volume have made x-ray imaging technology prohibitive to planetary remote sensing imaging missions. And although highly successful, the mirror technology used on ESA's XMM-Newton is not sufficient for future, large, x-ray observatories, since physical limits on the mirror packing density mean that aperture size becomes prohibitive. To reduce telescope mass and volume the packing density of mirror shells must be reduced, whilst maintaining alignment and rigidity. Structures can also benefit from a modular optic arrangement. Pore optics are shown to meet these requirements. This paper will discuss two pore optic technologies under development, with examples of results from measurement campaigns on samples. One activity has centred on the use of coated, silicon wafers, patterned with ribs, that are integrated onto a mandrel whose form has been polished to the required shape. The wafers follow the shape precisely, forming pore sizes in the sub-mm region. Individual stacks of mirrors can be manufactured without risk to, or dependency on, each other and aligned in a structure from which they can also be removed without hazard. A breadboard is currently being built to demonstrate this technology. A second activity centres on glass pore optics. However an adaptation of micro channel plate technology to form square pores has resulted in a monolithic material that can be slumped into an optic form. Alignment and coating of two such plates produces an x-ray focusing optic. A breadboard 20cm aperture optic is currently being built.

Unconventional imaging with contained granular media

NASA Astrophysics Data System (ADS)

Quadrelli, Marco B.; Basinger, Scott; Sidick, Erkin

2017-09-01

Typically, the cost of a space-borne imaging system is driven by the size and mass of the primary aperture. The solution that we propose uses a method to construct an imaging system in space in which the nonlinear optical properties of a cloud of micron-sized particles, shaped into a specific surface by electromagnetic means, and allows one to form a very large and lightweight aperture of an optical system, hence reducing overall mass and cost. Recent work at JPL has investigated the feasibility of a granular imaging system, concluding that such a system could be built and controlled in orbit. We conducted experiments and simulation of the optical response of a granular lens. In all cases, the optical response, measured by the Modulation Transfer Function, of hexagonal reflectors was closely comparable to that of a conventional spherical mirror. We conducted some further analyses by evaluating the sensitivity to fill factor and grain shape, and found a marked sensitivity to fill factor but no sensitivity to grain shape. We have also found that at fill factors as low as 30%, the reflection from a granular lens is still excellent. Furthermore, we replaced the monolithic primary mirror in an existing integrated model of an optical system (WFIRST Coronagraph) with a granular lens, and found that the granular lens that can be useful for exoplanet detection provides excellent contrast levels. We will present our testbed and simulation results in this paper.