High voltage semiconductor devices and methods of making the devices

DOEpatents

Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

2017-02-28

A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

Low-jitter high-power thyristor array pulse driver and generator

DOEpatents

Hanks, Roy L.

2002-01-01

A method and apparatus for generating low-jitter, high-voltage and high-current pulses for driving low impedance loads such as detonator fuses uses a MOSFET driver which, when triggered, discharges a high-voltage pre-charged capacitor into the primary of a toroidal current-multiplying transformer with multiple isolated secondary windings. The secondary outputs are suitable for driving an array of thyristors that discharge a precharged high-voltage capacitor and thus generating the required high-voltage and high-current pulse.

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.

PubMed

Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

2016-08-22

We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm(2)/Vs, respectively, at room temperature.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, James D.

1997-01-01

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, J.D.

1997-09-02

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

Compact sub-nanosecond pulse seed source with diode laser driven by a high-speed circuit

NASA Astrophysics Data System (ADS)

Wang, Xiaoqian; Wang, Bo; Wang, Junhua; Cheng, Wenyong

2018-06-01

A compact sub-nanosecond pulse seed source with 1550 nm diode laser (DL) was obtained by employing a high-speed circuit. The circuit mainly consisted of a short pulse generator and a short pulse driver. The short pulse generator, making up of a complex programmable logic device (CPLD), a level translator, two programmable delay chips and an AND gate chip, output a triggering signal to control metal-oxide-semiconductor field-effect transistor (MOSFET) switch of the short pulse driver. The MOSFET switch with fast rising time and falling time both shorter than 1 ns drove the DL to emit short optical pulses. Performances of the pulse seed source were tested. The results showed that continuously adjustable repetition frequency ranging from 500 kHz to 100 MHz and pulse duration in the range of 538 ps to 10 ns were obtained, respectively. 537 μW output was obtained at the highest repetition frequency of 100 MHz with the shortest pulse duration of 538 ps. These seed pulses were injected into an fiber amplifier, and no optical pulse distortions were found.

MOSFET-based high voltage short pulse generator for ultrasonic transducer excitation

NASA Astrophysics Data System (ADS)

Hidayat, Darmawan; Setianto, Syafei, Nendi Suhendi; Wibawa, Bambang Mukti

2018-02-01

This paper presents the generation of a high-voltage short pulse for the excitation of high frequency ultrasonic transducers. This is highly required in the purpose of various ultrasonic-based evaluations, particularly when high resolution measurement is necessary. A high voltage (+760 V) DC voltage source was pulsated by an ultrafast switching MOSFET which was driven by a pulse generator circuit consisting of an astable multivibrator, a one-shot multivibrator with Schmitt trigger input and a high current MOSFET driver. The generated pulses excited a 200-kHz and a 1-MHz ultrasonic transducers and tested in the transmission mode propagation to evaluate the performances of the generated pulse. The test results showed the generator were able to produce negative spike pulses up to -760 V voltage with the shortest time-width of 107.1 nanosecond. The transmission-received ultrasonic waves show frequency oscillation at 200 and 961 kHz and their amplitudes varied with the voltage of excitation pulse. These results conclude that the developed pulse generator is applicable to excite transducer for the generation of high frequency ultrasonic waves.

Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Muta, Tsubasa; Kobayashi, Mikinori

2016-07-18

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulationmore » by the gate and pinch off.« less

Radiation dose response of N channel MOSFET submitted to filtered X-ray photon beam

NASA Astrophysics Data System (ADS)

Gonçalves Filho, Luiz C.; Monte, David S.; Barros, Fabio R.; Santos, Luiz A. P.

2018-01-01

MOSFET can operate as a radiation detector mainly in high-energy photon beams, which are normally used in cancer treatments. In general, such an electronic device can work as a dosimeter from threshold voltage shift measurements. The purpose of this article is to show a new way for measuring the dose-response of MOSFETs when they are under X-ray beams generated from 100kV potential range, which is normally used in diagnostic radiology. Basically, the method consists of measuring the MOSFET drain current as a function of the radiation dose. For this the type of device, it has to be biased with a high value resistor aiming to see a substantial change in the drain current after it has been irradiated with an amount of radiation dose. Two types of N channel device were used in the experiment: a signal transistor and a power transistor. The delivered dose to the device was varied and the electrical curves were plotted. Also, a sensitivity analysis of the power MOSFET response was made, by varying the tube potential of about 20%. The results show that both types of devices have responses very similar, the shift in the electrical curve is proportional to the radiation dose. Unlike the power MOSFET, the signal transistor does not provide a linear function between the dose rate and its drain current. We also have observed that the variation in the tube potential of the X-ray equipment produces a very similar dose-response.

Recent Radiation Test Results for Trench Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan C.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak S.; Topper, Alyson D.; Ladbury, Raymond L.; Label, Kenneth A.

2017-01-01

Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions.

The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

NASA Astrophysics Data System (ADS)

Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

2018-02-01

A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs

NASA Technical Reports Server (NTRS)

Selva, L.; Swift, G.; Taylor, W.; Edmonds, L.

1999-01-01

In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer.

Molecular sensing using monolayer floating gate, fully depleted SOI MOSFET acting as an exponential transducer.

PubMed

Takulapalli, Bharath R

2010-02-23

Field-effect transistor-based chemical sensors fall into two broad categories based on the principle of signal transduction-chemiresistor or Schottky-type devices and MOSFET or inversion-type devices. In this paper, we report a new inversion-type device concept-fully depleted exponentially coupled (FDEC) sensor, using molecular monolayer floating gate fully depleted silicon on insulator (SOI) MOSFET. Molecular binding at the chemical-sensitive surface lowers the threshold voltage of the device inversion channel due to a unique capacitive charge-coupling mechanism involving interface defect states, causing an exponential increase in the inversion channel current. This response of the device is in opposite direction when compared to typical MOSFET-type sensors, wherein inversion current decreases in a conventional n-channel sensor device upon addition of negative charge to the chemical-sensitive device surface. The new sensor architecture enables ultrahigh sensitivity along with extraordinary selectivity. We propose the new sensor concept with the aid of analytical equations and present results from our experiments in liquid phase and gas phase to demonstrate the new principle of signal transduction. We present data from numerical simulations to further support our theory.

Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

NASA Astrophysics Data System (ADS)

Sasaki, Taro; Endoh, Tetsuo

2018-04-01

In this paper, from the viewpoint of cell size and sensing margin, the impact of a novel cross-point-type one transistor and one magnetic tunnel junction (1T–1MTJ) spin-transfer-torque magnetoresistive random access memory (STT-MRAM) cell with a multi-pillar vertical body channel (BC) MOSFET is shown for high density and wide sensing margin STT-MRAM, with a 10 ns writing period and 1.2 V V DD. For that purpose, all combinations of n/p-type MOSFETs and bottom/top-pin MTJs are compared, where the diameter of MTJ (D MTJ) is scaled down from 55 to 15 nm and the tunnel magnetoresistance (TMR) ratio is increased from 100 to 200%. The results show that, benefiting from the proposed STT-MRAM cell with no back bias effect, the MTJ with a high TMR ratio (200%) can be used in the design of smaller STT-MRAM cells (over 72.6% cell size reduction), which is a difficult task for conventional planar MOSFET based design.

Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

Silicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

NASA Astrophysics Data System (ADS)

Titus, Jeffrey L.

2013-06-01

Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e.g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE Transaction on Nuclear Science [Johnson, Palau, Dachs, Galloway and Schrimpf, “A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, “Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.

Regenerative switching CMOS system

DOEpatents

Welch, James D.

1998-01-01

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

Regenerative switching CMOS system

DOEpatents

Welch, J.D.

1998-06-02

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

Charge generation by heavy ions in power MOSFETs, burnout space predictions, and dynamic SEB sensitivity

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Brucker, G. J.; Calvel, P.; Baiget, A.; Peyrotte, C.; Gaillard, R.

1992-01-01

The transport, energy loss, and charge production of heavy ions in the sensitive regions of IRF 150 power MOSFETs are described. The dependence and variation of transport parameters with ion type and energy relative to the requirements for single event burnout in this part type are discussed. Test data taken with this power MOSFET are used together with analyses by means of a computer code of the ion energy loss and charge production in the device to establish criteria for burnout and parameters for space predictions. These parameters are then used in an application to predict burnout rates in a geostationary orbit for power converters operating in a dynamic mode. Comparisons of rates for different geometries in simulating SEU (single event upset) sensitive volumes are presented.

Four Terminal Gallium Nitride MOSFETs

NASA Astrophysics Data System (ADS)

Veety, Matthew Thomas

All reported gallium nitride (GaN) transistors to date have been three-terminal devices with source, drain, and gate electrodes. In the case of GaN MOSFETs, this leaves the bulk of the device at a floating potential which can impact device threshold voltage. In more traditional silicon-based MOSFET fabrication a bulk contact can be made on the back side of the silicon wafer. For GaN grown on sapphire substrates, however, this is not possible and an alternate, front-side bulk contact must be investigated. GaN is a III-V, wide band gap semiconductor that as promising material parameters for use in high frequency and high power applications. Possible applications are in the 1 to 10 GHz frequency band and power inverters for next generation grid solid state transformers and inverters. GaN has seen significant academic and commercial research for use in Heterojunction Field Effect Transistors (HFETs). These devices however are depletion-mode, meaning the device is considered "on" at zero gate bias. A MOSFET structure allows for enhancement mode operation, which is normally off. This mode is preferrable in high power applications as the device has lower off-state power consumption and is easier to implement in circuits. Proper surface passivation of seminconductor surface interface states is an important processing step for any device. Preliminary research on surface treatments using GaN wet etches and depletion-mode GaN devices utilizing this process are discussed. Devices pretreated with potassium pursulfate prior to gate dielectric deposition show significant device improvements. This process can be applied to any current GaN FET. Enhancement-mode GaN MOSFETs were fabricated on magnesium doped p-type Wurtzite gallium nitride grown by Metal Organic Chemical Vapor Deposition (MOCVD) on c-plane sapphire substrates. Devices utilized ion implant source and drain which was activated under NH3 overpressure in MOCVD. Also, devices were fabricated with a SiO2 gate dielectric and metal gate. Preliminary devices exhibited high GaN-oxide interface state density, Dit, on the order of 1013 cm-2· eV-1. Additional experiments and device fabrication was focused on improving device performance through optimization of the ion implantation activation anneal as well as incorporation of a bulk p-type ohmic contact and migration to a thicker, lower defect density, HVPE-grown template substrate. The first reported MOSFET on HVPE grown GaN substrates (templates) is reported with peak measured drain current of 1.05 mA/mm and a normalized transconductance of 57 muS/mm. Fabricated devices exhibited large (greater than 1 muA) source-to-drain junction leakage which is attributed to low activated doping density in the MOCVD-grown p-type bulk. MOSFETs fabricated on template substrates show more than twice the measured drain current as similar devices fabricated on traditional MOCVD GaN on sapphire substrates for the same bias conditions. Also, template MOSFETs have decreased gate leakage which allowed for a much greater range of operation. This performance increase is attributed to a more than doubled effective channel mobility on template GaN MOSFETs due to decreased crystal defect scattering when compared to a MOCVD-grown GaN-on-sapphire MOSFET. Fabricated MOSFETs also exhibit decreased interface state density with lower bound of 2.2x1011 cm-2·eV-1 when compared to prelimary MOSFETs. This decrease is associated with the use of a sacrificial oxide cap during source/drain activation. Suggested work for continued research is also presented which includes experiments to improve source/drain ion implantation profile, utilization of selective area growth for the active area, improved n- and p-type ohmic contact resistance and investigation of alternate oxides.

Novel power MOSFET-based expander for high frequency ultrasound systems.

PubMed

Choi, Hojong; Shung, K Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4% and 240% compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. Copyright © 2013 Elsevier B.V. All rights reserved.

Novel Power MOSFET-Based Expander for High Frequency Ultrasound Systems

PubMed Central

Choi, Hojong; Shung, K. Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4 % and 240 % compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. PMID:23835308

Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Dopant distributions in n-MOSFET structure observed by atom probe tomography.

PubMed

Inoue, K; Yano, F; Nishida, A; Takamizawa, H; Tsunomura, T; Nagai, Y; Hasegawa, M

2009-11-01

The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.

First principles investigation of SiC/AlGaN(0001) band offset

NASA Astrophysics Data System (ADS)

Kojima, E.; Endo, K.; Shirakawa, H.; Chokawa, K.; Araidai, M.; Ebihara, Y.; Kanemura, T.; Onda, S.; Shiraishi, K.

2017-06-01

We are attempting to develop a new type of vertical MOSFET with SiC/AlGaN heterojunction. Toward the realization of the vertical MOSFET, the control of conduction-band offset is one of the crucial subjects. We investigated the conduction-band offset of 4H-SiC/AlxGa1-xN interface by the first-principles electronic structure calculations. We found that the offset of the interface with 40% Al content becomes almost zero. Therefore, 4H-SiC/Al0.4Ga0.6N interface is one of the most promising candidates for the vertical MOSFET in future power conversion devices.

Volumetric measurement of human red blood cells by MOSFET-based microfluidic gate.

PubMed

Guo, Jinhong; Ai, Ye; Cheng, Yuanbing; Li, Chang Ming; Kang, Yuejun; Wang, Zhiming

2015-08-01

In this paper, we present a MOSFET-based (metal oxide semiconductor field-effect transistor) microfluidic gate to characterize the translocation of red blood cells (RBCs) through a gate. In the microfluidic system, the bias voltage modulated by the particles or biological cells is connected to the gate of MOSFET. The particles or cells can be detected by monitoring the MOSFET drain current instead of DC/AC-gating method across the electronic gate. Polystyrene particles with various standard sizes are utilized to calibrate the proposed device. Furthermore, RBCs from both adults and newborn blood sample are used to characterize the performance of the device in distinguishing the two types of RBCs. As compared to conventional DC/AC current modulation method, the proposed device demonstrates a higher sensitivity and is capable of being a promising platform for bioassay analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

PubMed

Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

2014-10-20

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

A Self-Aligned InGaAs Quantum-Well Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

NASA Astrophysics Data System (ADS)

Lin, Jianqiang; Kim, Tae-Woo; Antoniadis, Dimitri A.; del Alamo, Jesús A.

2012-06-01

We present a novel n-type InGaAs quantum-well metal-oxide-semiconductor field-effect transistor (QW-MOSFET) fabricated by a self-aligned gate-last process and investigate relevant Si-like manufacturing issues in future III-V MOSFETs. The device structure features a composite InP/Al2O3 gate barrier with a capacitance equivalent thickness (CET) of 3 nm and non alloyed Mo ohmic contacts. We have found that RIE introduces significant damage to the intrinsic device resulting in poor current drive and subthreshold swing. The effect is largely removed through a thermal annealing step. Thermally annealed QW-MOSFETs exhibit a subthreshold swing of 95 mV/dec, indicative of excellent interfacial characteristics. The peak mobility of the MOSFET is 2780 cm2 V-1 s-1.

Application of commercial MOSFET detectors for in vivo dosimetry in the therapeutic x-ray range from 80 kV to 250 kV

NASA Astrophysics Data System (ADS)

Ehringfeld, Christian; Schmid, Susanne; Poljanc, Karin; Kirisits, Christian; Aiginger, Hannes; Georg, Dietmar

2005-01-01

The purpose of this study was to investigate the dosimetric characteristics (energy dependence, linearity, fading, reproducibility, etc) of MOSFET detectors for in vivo dosimetry in the kV x-ray range. The experience of MOSFET in vivo dosimetry in a pre-clinical study using the Alderson phantom and in clinical practice is also reported. All measurements were performed with a Gulmay D3300 kV unit and TN-502RDI MOSFET detectors. For the determination of correction factors different solid phantoms and a calibrated Farmer-type chamber were used. The MOSFET signal was linear with applied dose in the range from 0.2 to 2 Gy for all energies. Due to fading it is recommended to read the MOSFET signal during the first 15 min after irradiation. For long time intervals between irradiation and readout the fading can vary largely with the detector. The temperature dependence of the detector signal was small (0.3% °C-1) in the temperature range between 22 and 40 °C. The variation of the measuring signal with beam incidence amounts to ±5% and should be considered in clinical applications. Finally, for entrance dose measurements energy-dependent calibration factors, correction factors for field size and irradiated cable length were applied. The overall accuracy, for all measurements, was dominated by reproducibility as a function of applied dose. During the pre-clinical in vivo study, the agreement between MOSFET and TLD measurements was well within 3%. The results of MOSFET measurements, to determine the dosimetric characteristics as well as clinical applications, showed that MOSFET detectors are suitable for in vivo dosimetry in the kV range. However, some energy-dependent dosimetry effects need to be considered and corrected for. Due to reproducibility effects at low dose levels accurate in vivo measurements are only possible if the applied dose is equal to or larger than 2 Gy.

Application of commercial MOSFET detectors for in vivo dosimetry in the therapeutic x-ray range from 80 kV to 250 kV.

PubMed

Ehringfeld, Christian; Schmid, Susanne; Poljanc, Karin; Kirisits, Christian; Aiginger, Hannes; Georg, Dietmar

2005-01-21

The purpose of this study was to investigate the dosimetric characteristics (energy dependence, linearity, fading, reproducibility, etc) of MOSFET detectors for in vivo dosimetry in the kV x-ray range. The experience of MOSFET in vivo dosimetry in a pre-clinical study using the Alderson phantom and in clinical practice is also reported. All measurements were performed with a Gulmay D3300 kV unit and TN-502RDI MOSFET detectors. For the determination of correction factors different solid phantoms and a calibrated Farmer-type chamber were used. The MOSFET signal was linear with applied dose in the range from 0.2 to 2 Gy for all energies. Due to fading it is recommended to read the MOSFET signal during the first 15 min after irradiation. For long time intervals between irradiation and readout the fading can vary largely with the detector. The temperature dependence of the detector signal was small (0.3% degrees C(-1)) in the temperature range between 22 and 40 degrees C. The variation of the measuring signal with beam incidence amounts to +/-5% and should be considered in clinical applications. Finally, for entrance dose measurements energy-dependent calibration factors, correction factors for field size and irradiated cable length were applied. The overall accuracy, for all measurements, was dominated by reproducibility as a function of applied dose. During the pre-clinical in vivo study, the agreement between MOSFET and TLD measurements was well within 3%. The results of MOSFET measurements, to determine the dosimetric characteristics as well as clinical applications, showed that MOSFET detectors are suitable for in vivo dosimetry in the kV range. However, some energy-dependent dosimetry effects need to be considered and corrected for. Due to reproducibility effects at low dose levels accurate in vivo measurements are only possible if the applied dose is equal to or larger than 2 Gy.

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

Ultra-short pulse generator

DOEpatents

McEwan, T.E.

1993-12-28

An inexpensive pulse generating circuit is disclosed that generates ultra-short, 200 picosecond, and high voltage 100 kW, pulses suitable for wideband radar and other wideband applications. The circuit implements a nonlinear transmission line with series inductors and variable capacitors coupled to ground made from reverse biased diodes to sharpen and increase the amplitude of a high-voltage power MOSFET driver input pulse until it causes non-destructive transit time breakdown in a final avalanche shock wave diode, which increases and sharpens the pulse even more. 5 figures.

Ultra-short pulse generator

DOEpatents

McEwan, Thomas E.

1993-01-01

An inexpensive pulse generating circuit is disclosed that generates ultra-short, 200 picosecond, and high voltage 100 kW, pulses suitable for wideband radar and other wideband applications. The circuit implements a nonlinear transmission line with series inductors and variable capacitors coupled to ground made from reverse biased diodes to sharpen and increase the amplitude of a high-voltage power MOSFET driver input pulse until it causes non-destructive transit time breakdown in a final avalanche shockwave diode, which increases and sharpens the pulse even more.

Design and fabrication of high-performance diamond triple-gate field-effect transistors

PubMed Central

Liu, Jiangwei; Ohsato, Hirotaka; Wang, Xi; Liao, Meiyong; Koide, Yasuo

2016-01-01

The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device’s electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET’s output current (174.2 mA mm−1) is much higher than that of the planar-type device (45.2 mA mm−1), and the on/off ratio and subthreshold swing are more than 108 and as low as 110 mV dec−1, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications. PMID:27708372

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamichhane, Ranjan; Ericson, Milton Nance; Frank, Steven Shane

2014-01-01

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz tomore » 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.« less

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2016-02-01

Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermalmore » model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.« less

Determination of the p-spray profile for n+ p silicon sensors using a MOSFET

NASA Astrophysics Data System (ADS)

Fretwurst, E.; Garutti, E.; Klanner, R.; Kopsalis, I.; Schwandt, J.; Weberpals, M.

2017-09-01

The standard technique to electrically isolate the n+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p+-implants. Although the knowledge of the p+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with ≈ 3 . 5 × 1012cm-2 of boron and 〈 100 〉 crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3 . 5 × 1012cm-3 and 2 × 1015cm-3 for the MOSFET with p+-implant, is determined down to a distance of a fraction of a μm from the Si-SiO2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed.

Analysis of high-k spacer on symmetric underlap DG-MOSFET with Gate Stack architecture

NASA Astrophysics Data System (ADS)

Das, Rahul; Chakraborty, Shramana; Dasgupta, Arpan; Dutta, Arka; Kundu, Atanu; Sarkar, Chandan K.

2016-09-01

This paper shows the systematic study of underlap double gate (U-DG) NMOSFETs with Gate Stack (GS) under the influence of high-k spacers. In highly scaled devices, underlap is used at the Source and Drain side so as to reduce the short channel effects (SCE's), however, it significantly reduces the on current due to the increased channel resistance. To overcome these drawbacks, the use of high-k spacers is projected as one of the remedies. In this paper, the analog performance of the devices is studied on the basis of parameters like transconductance (gm), transconductance generation factor (gm/Id) and intrinsic gain (gmro). The RF performance is analyzed on the merits of intrinsic capacitance (Cgd, Cgs), resistance (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency (fT), and the maximum frequency of oscillation (fmax). The circuit performance of the devices are studied by implementing the device as the driver MOSFET in a Single Stage Common Source Amplifier. The Gain Bandwidth Product (GBW) has been analyzed from the frequency response of the circuit.

A CMOS matrix for extracting MOSFET parameters before and after irradiation

NASA Technical Reports Server (NTRS)

Blaes, B. R.; Buehler, M. G.; Lin, Y.-S.; Hicks, K. A.

1988-01-01

An addressable matrix of 16 n- and 16 p-MOSFETs was designed to extract the dc MOSFET parameters for all dc gate bias conditions before and after irradiation. The matrix contains four sets of MOSFETs, each with four different geometries that can be biased independently. Thus the worst-case bias scenarios can be determined. The MOSFET matrix was fabricated at a silicon foundry using a radiation-soft CMOS p-well LOCOS process. Co-60 irradiation results for the n-MOSFETs showed a threshold-voltage shift of -3 mV/krad(Si), whereas the p-MOSFETs showed a shift of 21 mV/krad(Si). The worst-case threshold-voltage shift occurred for the n-MOSFETs, with a gate bias of 5 V during the anneal. For the p-MOSFETs, biasing did not affect the shift in the threshold voltage. A parasitic MOSFET dominated the leakage of the n-MOSFET biased with 5 V on the gate during irradiation. Co-60 test results for other parameters are also presented.

In vivo proton dosimetry using a MOSFET detector in an anthropomorphic phantom with tissue inhomogeneity.

PubMed

Kohno, Ryosuke; Hotta, Kenji; Matsubara, Kana; Nishioka, Shie; Matsuura, Taeko; Kawashima, Mitsuhiko

2012-03-08

When in vivo proton dosimetry is performed with a metal-oxide semiconductor field-effect transistor (MOSFET) detector, the response of the detector depends strongly on the linear energy transfer. The present study reports a practical method to correct the MOSFET response for linear energy transfer dependence by using a simplified Monte Carlo dose calculation method (SMC). A depth-output curve for a mono-energetic proton beam in polyethylene was measured with the MOSFET detector. This curve was used to calculate MOSFET output distributions with the SMC (SMC(MOSFET)). The SMC(MOSFET) output value at an arbitrary point was compared with the value obtained by the conventional SMC(PPIC), which calculates proton dose distributions by using the depth-dose curve determined by a parallel-plate ionization chamber (PPIC). The ratio of the two values was used to calculate the correction factor of the MOSFET response at an arbitrary point. The dose obtained by the MOSFET detector was determined from the product of the correction factor and the MOSFET raw dose. When in vivo proton dosimetry was performed with the MOSFET detector in an anthropomorphic phantom, the corrected MOSFET doses agreed with the SMC(PPIC) results within the measurement error. To our knowledge, this is the first report of successful in vivo proton dosimetry with a MOSFET detector.

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

NASA Astrophysics Data System (ADS)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

Automated System Tests High-Power MOSFET's

NASA Technical Reports Server (NTRS)

Huston, Steven W.; Wendt, Isabel O.

1994-01-01

Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.

Annealing effects on hydrogenated diamond NOR logic circuits

NASA Astrophysics Data System (ADS)

Liu, J. W.; Oosato, H.; Liao, M. Y.; Imura, M.; Watanabe, E.; Koide, Y.

2018-04-01

Here, hydrogenated diamond (H-diamond) NOR logic circuits composed of two p-type enhancement-mode (E-mode) metal-oxide-semiconductor field-effect-transistors (MOSFETs) and a load resistor are fabricated and characterized. The fabrication process and the annealing effect on the electrical properties of the NOR logic circuit are demonstrated. There are distinct logical characteristics for the as-received and 300 °C annealed NOR logic circuits. When one or both input voltages for the E-mode MOSFETs are -10.0 V and "high" signals, output voltages respond 0 V and "low" signals. Instead, when both input voltages are 0 V and "low" signals, output voltage responds -10.0 V and a "high" signal. After annealing at 400 °C, the NOR logical characteristics are damaged, which is possibly attributed to the degradation of the H-diamond MOSFETs.

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1991-01-01

Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Dosimetric characteristics of a MOSFET dosimeter for clinical electron beams.

PubMed

Manigandan, D; Bharanidharan, G; Aruna, P; Devan, K; Elangovan, D; Patil, Vikram; Tamilarasan, R; Vasanthan, S; Ganesan, S

2009-09-01

The fundamental dosimetric characteristics of commercially available metal oxide semiconductor field effect transistor (MOSFET) detectors were studied for clinical electron beam irradiations. MOSFET showed excellent linearity against doses measured using an ion chamber in the dose range of 20-630cGy. MOSFET reproducibility is better at high doses compared to low doses. The output factors measured with the MOSFET were within +/-3% when compared with those measured with a parallel plate chamber. From 4 to 12MeV, MOSFETs showed a large angular dependence in the tilt directions and less in the axial directions. MOSFETs do not show any dose-rate dependence between 100 and 600MU/min. However, MOSFETs have shown under-response when the dose per pulse of the beam is decreased. No measurable effect in MOSFET response was observed in the temperature range of 23-40 degrees C. The energy dependence of a MOSFET dosimeter was within +/-3.0% for 6-18MeV electron beams and 5.5% for 4MeV ones. This study shows that MOSFET detectors are suitable for dosimetry of electron beams in the energy range of 4-18MeV.

MOSFET detectors in quality assurance of tomotherapy treatments.

PubMed

Cherpak, Amanda; Studinski, Ryan C N; Cygler, Joanna E

2008-02-01

The purpose of this work was to characterize metal oxide semiconductor field-effect transistors (MOSFETs) in a 6 MV conventional linac and investigate their use for quality assurance of radiotherapy treatments with a tomotherapy Hi-Art unit. High sensitivity and standard sensitivity MOSFETs were first calibrated and then tested for reproducibility, field size dependence, and accuracy of measuring surface dose in a 6 MV beam as well as in a tomotherapy Hi-Art unit. In vivo measurements were performed on both a RANDO phantom and several head and neck cancer patients treated with tomotherapy and compared to TLD measurements and treatment plan doses to evaluate the performance of MOSFETs in a high gradient radiation field. The average calibration factor found was 0.345+/-2.5%cGy/mV for the high sensitivity MOSFETs tested and 0.901+/-2.4%cGy/mV for the standard sensitivity MOSFETs. MOSFET measured surface doses had an average agreement with ion chamber measurements of 1.55% for the high sensitivity MOSFET and 5.23% for the standard sensitivity MOSFET when averaged over all trials and field sizes tested. No significant dependence on field size was found for the standard sensitivity MOSFETs, however a maximum difference of 5.34% was found for the high sensitivity MOSFET calibration factors in the field sizes tested. Measurements made with MOSFETS on head and neck patients treated on a tomotherapy Hi-Art unit had an average agreement of (3.26+/-0.03)% with TLD measurements, however the average of the absolute difference between the MOSFET measurements and the treatment plan skin doses was (12.2+/-7.5)%. The MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1.4% to 6.6%. Similar results were found from trials using a RANDO phantom. The MOSFETs performed well when used in the tomotherapy Hi-Art unit and did not increase the overall treatment set-up time when used for patient measurements. It was found that MOSFETs are suitable detectors for surface dose measurements in both conventional beam and tomotherapy treatments and they can provide valuable skin dose information in areas where the treatment planning system may not be accurate.

Robust mode space approach for atomistic modeling of realistically large nanowire transistors

NASA Astrophysics Data System (ADS)

Huang, Jun Z.; Ilatikhameneh, Hesameddin; Povolotskyi, Michael; Klimeck, Gerhard

2018-01-01

Nanoelectronic transistors have reached 3D length scales in which the number of atoms is countable. Truly atomistic device representations are needed to capture the essential functionalities of the devices. Atomistic quantum transport simulations of realistically extended devices are, however, computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numerical cost, but a good MS basis is usually very hard to obtain for atomistic full-band models. In this work, a robust and parallel algorithm is developed to optimize the MS basis for atomistic nanowires. This enables engineering-level, reliable tight binding non-equilibrium Green's function simulation of nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) with a realistic cross section of 10 nm × 10 nm using a small computer cluster. This approach is applied to compare the performance of InGaAs and Si nanowire n-type MOSFETs (nMOSFETs) with various channel lengths and cross sections. Simulation results with full-band accuracy indicate that InGaAs nanowire nMOSFETs have no drive current advantage over their Si counterparts for cross sections up to about 10 nm × 10 nm.

Calibration of a mosfet detection system for 6-MV in vivo dosimetry.

PubMed

Scalchi, P; Francescon, P

1998-03-01

Metal oxide semiconductor field-effect transistor (MOSFET) detectors were calibrated to perform in vivo dosimetry during 6-MV treatments, both in normal setup and total body irradiation (TBI) conditions. MOSFET water-equivalent depth, dependence of the calibration factors (CFs) on the field sizes, MOSFET orientation, bias supply, accumulated dose, incidence angle, temperature, and spoiler-skin distance in TBI setup were investigated. MOSFET reproducibility was verified. The correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was studied. MOSFET midplane dosimetry in TBI setup was compared with thermoluminescent dosimetry in an anthropomorphic phantom. By using ionization chamber measurements, the TBI midplane dosimetry was also verified in the presence of cork as a lung substitute. The water-equivalent depth of the MOSFET is about 0.8 mm or 1.8 mm, depending on which sensor side faces the beam. The field size also affects this quantity; Monte Carlo simulations allow driving this behavior by changes in the contaminating electron mean energy. The CFs vary linearly as a function of the square field side, for fields ranging from 5 x 5 to 30 x 30 cm2. In TBI setup, varying the spoiler-skin distance between 5 mm and 10 cm affects the CFs within 5%. The MOSFET reproducibility is about 3% (2 SD) for the doses normally delivered to the patients. The effect of the accumulated dose on the sensor response is negligible. For beam incidence ranging from 0 degrees to 90 degrees, the MOSFET response varies within 7%. No monotonic correlation between the sensor response and the temperature is apparent. Good correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was found (the correlation coefficient is about 1). The MOSFET midplane dosimetry relevant to the anthropomorphic phantom irradiation is in agreement with TLD dosimetry within 5%. Ionization chamber and MOSFET midplane dosimetry in inhomogeneous phantoms are in agreement within 2%. MOSFET characteristics are suitable for the in vivo dosimetry relevant to 6-MV treatments, both in normal and TBI setup. The TBI midplane dosimetry using MOSFETs is valid also in the presence of the lung, which is the most critical organ, and allows verifying that calculation of the lung attenuator thicknesses based only on the density is not correct. Our MOSFET dosimetry system can be used also to determine the surface dose by using the water-equivalent depth and extrapolation methods. This procedure depends on the field size used.

Measurement and comparison of skin dose using OneDose MOSFET and Mobile MOSFET for patients with acute lymphoblastic leukemia

PubMed Central

Mattar, Essam H.; Hammad, Lina F.; Al-Mohammed, Huda I.

2011-01-01

Summary Background Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to bone marrow transplant. It is involved in the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore measuring and monitoring the skin dose during the treatment is important. Two kinds of metal oxide semiconductor field effect transistor (OneDose MOSFET and mobile MOSEFT) dosimeter are used during the treatment delivery to measure the skin dose to specific points and compare it with the target prescribed dose. The objective of this study was to compare the variation of skin dose in patients with acute lymphatic leukemia (ALL) treated with total body irradiation (TBI) using OneDose MOSFET detectors and Mobile MOSFET, and then compare both results with the target prescribed dose. Material/Methods The measurements involved 32 patient’s (16 males, 16 females), aged between 14–30 years, with an average age of 22.41 years. One-Dose MOSFET and Mobile MOSFET dosimetry were performed at 10 different anatomical sites on every patient. Results The results showed there was no variation between skin dose measured with OneDose MOSFET and Mobile MOSFET in all patients. Furthermore, the results showed for every anatomical site selected there was no significant difference in the dose delivered using either OneDose MOSFET detector or Mobile MOSFET as compared to the prescribed dose. Conclusions The study concludes that One-Dose MOSFET detectors and Mobile MOSFET both give a direct read-out immediately after the treatment; therefore both detectors are suitable options when measuring skin dose for total body irradiation treatment. PMID:21709641

Measurement and comparison of skin dose using OneDose MOSFET and Mobile MOSFET for patients with acute lymphoblastic leukemia.

PubMed

Mattar, Essam H; Hammad, Lina F; Al-Mohammed, Huda I

2011-07-01

Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to bone marrow transplant. It is involved in the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore measuring and monitoring the skin dose during the treatment is important. Two kinds of metal oxide semiconductor field effect transistor (OneDose MOSFET and mobile MOSEFT) dosimeter are used during the treatment delivery to measure the skin dose to specific points and compare it with the target prescribed dose. The objective of this study was to compare the variation of skin dose in patients with acute lymphatic leukemia (ALL) treated with total body irradiation (TBI) using OneDose MOSFET detectors and Mobile MOSFET, and then compare both results with the target prescribed dose. The measurements involved 32 patient's (16 males, 16 females), aged between 14-30 years, with an average age of 22.41 years. One-Dose MOSFET and Mobile MOSFET dosimetry were performed at 10 different anatomical sites on every patient. The results showed there was no variation between skin dose measured with OneDose MOSFET and Mobile MOSFET in all patients. Furthermore, the results showed for every anatomical site selected there was no significant difference in the dose delivered using either OneDose MOSFET detector or Mobile MOSFET as compared to the prescribed dose. The study concludes that One-Dose MOSFET detectors and Mobile MOSFET both give a direct read-out immediately after the treatment; therefore both detectors are suitable options when measuring skin dose for total body irradiation treatment.

Characteristics and performance of a micro-MOSFET: an "imageable" dosimeter for image-guided radiotherapy.

PubMed

Rowbottoma, Carl G; Jaffray, David A

2004-03-01

The performance and characteristics of a miniature metal oxide semiconductor field effect transistor (micro-MOSFET) detector was investigated for its potential application to integral system tests for image-guided radiotherapy. In particular, the position of peak response to a slit of radiation was determined for the three principal axes to define the co-ordinates for the center of the active volume of the detector. This was compared to the radiographically determined center of the micro-MOSFET visible using cone-beam CT. Additionally, the angular sensitivity of the micro-MOSFET was measured. The micro-MOSFETs are clearly visible on the cone-beam CT images, and produce no artifacts. The center of the active volume of the micro-MOSFET aligned with the center of the visible micro-MOSFET on the cone-beam CT images for the x and y axes to within 0.20 mm and 0.15 mm, respectively. In z, the long axis of the detector, the peak response was found to be 0.79 mm from the tip of the visible micro-MOSFET. Repeat experiments verified that the position of the peak response of the micro-MOSFET was reproducible. The micro-MOSFET response for 360 degrees of rotation in the axial plane to the micro-MOSFET was +/-2%, consistent with values quoted by the manufacturer. The location of the active volume of the micro-MOSFETs under investigation can be determined from the centroid of the visible micro-MOSFET on cone-beam CT images. The CT centroid position corresponds closely to the center of the detector response to radiation. The ability to use the cone-beam CT to locate the active volume to within 0.20 mm allows their use in an integral system test for the imaging of and dose delivery to a phantom containing an array of micro-MOSFETs. The small angular sensitivity allows the investigation of noncoplanar beams.

In vivo proton dosimetry using a MOSFET detector in an anthropomorphic phantom with tissue inhomogeneity

PubMed Central

Hotta, Kenji; Matsubara, Kana; Nishioka, Shie; Matsuura, Taeko; Kawashima, Mitsuhiko

2012-01-01

When in vivo proton dosimetry is performed with a metal‐oxide semiconductor field‐effect transistor (MOSFET) detector, the response of the detector depends strongly on the linear energy transfer. The present study reports a practical method to correct the MOSFET response for linear energy transfer dependence by using a simplified Monte Carlo dose calculation method (SMC). A depth‐output curve for a mono‐energetic proton beam in polyethylene was measured with the MOSFET detector. This curve was used to calculate MOSFET output distributions with the SMC (SMCMOSFET). The SMCMOSFET output value at an arbitrary point was compared with the value obtained by the conventional SMCPPIC, which calculates proton dose distributions by using the depth‐dose curve determined by a parallel‐plate ionization chamber (PPIC). The ratio of the two values was used to calculate the correction factor of the MOSFET response at an arbitrary point. The dose obtained by the MOSFET detector was determined from the product of the correction factor and the MOSFET raw dose. When in vivo proton dosimetry was performed with the MOSFET detector in an anthropomorphic phantom, the corrected MOSFET doses agreed with the SMCPPIC results within the measurement error. To our knowledge, this is the first report of successful in vivo proton dosimetry with a MOSFET detector. PACS number: 87.56.‐v PMID:22402385

Experimental evaluation of a MOSFET dosimeter for proton dose measurements.

PubMed

Kohno, Ryosuke; Nishio, Teiji; Miyagishi, Tomoko; Hirano, Eriko; Hotta, Kenji; Kawashima, Mitsuhiko; Ogino, Takashi

2006-12-07

The metal oxide semiconductor field-effect transistor (MOSFET) dosimeter has been widely studied for use as a dosimeter for patient dose verification. The major advantage of this detector is its size, which acts as a point dosimeter, and also its ease of use. The commercially available TN502RD MOSFET dosimeter manufactured by Thomson and Nielsen has never been used for proton dosimetry. Therefore we used the MOSFET dosimeter for the first time in proton dose measurements. In this study, the MOSFET dosimeter was irradiated with 190 MeV therapeutic proton beams. We experimentally evaluated dose reproducibility, linearity, fading effect, beam intensity dependence and angular dependence for the proton beam. Furthermore, the Bragg curve and spread-out Bragg peak were also measured and the linear-energy transfer (LET) dependence of the MOSFET response was investigated. Many characteristics of the MOSFET response for proton beams were the same as those for photon beams reported in previous papers. However, the angular MOSFET responses at 45, 90, 135, 225, 270 and 315 degrees for proton beams were over-responses of about 15%, and moreover the MOSFET response depended strongly on the LET of the proton beam. This study showed that the angular dependence and LET dependence of the MOSFET response must be considered very carefully for quantitative proton dose evaluations.

Calibration and error analysis of metal-oxide-semiconductor field-effect transistor dosimeters for computed tomography radiation dosimetry.

PubMed

Trattner, Sigal; Prinsen, Peter; Wiegert, Jens; Gerland, Elazar-Lars; Shefer, Efrat; Morton, Tom; Thompson, Carla M; Yagil, Yoad; Cheng, Bin; Jambawalikar, Sachin; Al-Senan, Rani; Amurao, Maxwell; Halliburton, Sandra S; Einstein, Andrew J

2017-12-01

Metal-oxide-semiconductor field-effect transistors (MOSFETs) serve as a helpful tool for organ radiation dosimetry and their use has grown in computed tomography (CT). While different approaches have been used for MOSFET calibration, those using the commonly available 100 mm pencil ionization chamber have not incorporated measurements performed throughout its length, and moreover, no previous work has rigorously evaluated the multiple sources of error involved in MOSFET calibration. In this paper, we propose a new MOSFET calibration approach to translate MOSFET voltage measurements into absorbed dose from CT, based on serial measurements performed throughout the length of a 100-mm ionization chamber, and perform an analysis of the errors of MOSFET voltage measurements and four sources of error in calibration. MOSFET calibration was performed at two sites, to determine single calibration factors for tube potentials of 80, 100, and 120 kVp, using a 100-mm-long pencil ion chamber and a cylindrical computed tomography dose index (CTDI) phantom of 32 cm diameter. The dose profile along the 100-mm ion chamber axis was sampled in 5 mm intervals by nine MOSFETs in the nine holes of the CTDI phantom. Variance of the absorbed dose was modeled as a sum of the MOSFET voltage measurement variance and the calibration factor variance, the latter being comprised of three main subcomponents: ionization chamber reading variance, MOSFET-to-MOSFET variation and a contribution related to the fact that the average calibration factor of a few MOSFETs was used as an estimate for the average value of all MOSFETs. MOSFET voltage measurement error was estimated based on sets of repeated measurements. The calibration factor overall voltage measurement error was calculated from the above analysis. Calibration factors determined were close to those reported in the literature and by the manufacturer (~3 mV/mGy), ranging from 2.87 to 3.13 mV/mGy. The error σ V of a MOSFET voltage measurement was shown to be proportional to the square root of the voltage V: σV=cV where c = 0.11 mV. A main contributor to the error in the calibration factor was the ionization chamber reading error with 5% error. The usage of a single calibration factor for all MOSFETs introduced an additional error of about 5-7%, depending on the number of MOSFETs that were used to determine the single calibration factor. The expected overall error in a high-dose region (~30 mGy) was estimated to be about 8%, compared to 6% when an individual MOSFET calibration was performed. For a low-dose region (~3 mGy), these values were 13% and 12%. A MOSFET calibration method was developed using a 100-mm pencil ion chamber and a CTDI phantom, accompanied by an absorbed dose error analysis reflecting multiple sources of measurement error. When using a single calibration factor, per tube potential, for different MOSFETs, only a small error was introduced into absorbed dose determinations, thus supporting the use of a single calibration factor for experiments involving many MOSFETs, such as those required to accurately estimate radiation effective dose. © 2017 American Association of Physicists in Medicine.

Characterization of MOSFET dosimeters for low-dose measurements in maxillofacial anthropomorphic phantoms.

PubMed

Koivisto, Juha H; Wolff, Jan E; Kiljunen, Timo; Schulze, Dirk; Kortesniemi, Mika

2015-07-08

The aims of this study were to characterize reinforced metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low-dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivities for two dental photon energy ranges, dose dependency, dose rate dependency, and accumulated dose dependency. A further aim was to compare the performance of MOSFETs with those of TLDs in an anthropomorphic phantom head using a dentomaxillofacial CBCT device. The uncertainty was assessed by exposing 20 MOSFETs and a Barracuda MPD reference dosimeter. The MOSFET dosimeter sensitivities were evaluated for two photon energy ranges (50-90 kVp) using a constant dose and polymethylmethacrylate backscatter material. MOSFET and TLD comparative point-dose measurements were performed on an anthropomorphic phantom that was exposed with a clinical CBCT protocol. The MOSFET single exposure low dose limit (25% uncertainty, k = 2) was 1.69 mGy. An averaging of eight MOSFET exposures was required to attain the corresponding TLD (0.3 mGy) low-dose limit. The sensitivity was 3.09 ± 0.13 mV/mGy independently of the photon energy used. The MOSFET dosimeters did not present dose or dose rate sensitivity but, however, presented a 1% decrease of sensitivity per 1000 mV for accumulated threshold voltages between 8300 mV and 17500 mV. The point doses in an anthropomorphic phantom ranged for MOSFETs between 0.24 mGy and 2.29 mGy and for TLDs between 0.25 and 2.09 mGy, respectively. The mean difference was -8%. The MOSFET dosimeters presented statistically insignificant energy dependency. By averaging multiple exposures, the MOSFET dosimeters can achieve a TLD-comparable low-dose limit and constitute a feasible method for diagnostic dosimetry using anthropomorphic phantoms. However, for single in vivo measurements (<1.7 mGy) the sensitivity is too low.

SU-F-T-474: Evaluation of Dose Perturbation, Temperature and Sensitivity Variation With Accumulated Dose of MOSFET Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ganesan, B; Prakasarao, A; Singaravelu, G

Purpose: The use of mega voltage gamma and x-ray sources with their skin sparring qualities in radiation therapy has been a boon in relieving patient discomfort and allowing high tumor doses to be given with fewer restrictions due to radiation effects in the skin. However, high doses given to deep tumors may require careful consideration of dose distribution in the buildup region in order to avoid irreparable damage to the skin. Methods: To measure the perturbation of MOSFET detector in Co60,6MV and 15MV the detector was placed on the surface of the phantom covered with the brass build up cap.more » To measure the effect of temperature the MOSFET detector was kept on the surface of hot water polythene container and the radiation was delivere. In order to measure the sensitivity variation with accumulated dose Measurements were taken by delivering the dose of 200 cGy to MOSFET until the MOSFET absorbed dose comes to 20,000 cGy Results: the Measurement was performed by positioning the bare MOSFET and MOSFET with brass build up cap on the top surface of the solid water phantom for various field sizes in order to find whether there is any attenuation caused in the dose distribution. The response of MOSFET was monitored for temperature ranging from 42 degree C to 22 degree C. The integrated dose dependence of MOSFET dosimeter sensitivity over different energy is not well characterized. This work investigates the dual-bias MOSFET dosimeter sensitivity response to 6 MV and 15 MV beams. Conclusion: From this study it is observed that unlike diode, bare MOSFET does not perturb the radiation field.. It is observed that the build-up influences the temperature dependency of MOSFET and causes some uncertainty in the readings. In the case of sensitivity variation with accumulated dose MOSFET showed higher sensitivity with dose accumulation for both the energies.« less

Skin dose measurements using MOSFET and TLD for head and neck patients treated with tomotherapy.

PubMed

Kinhikar, Rajesh A; Murthy, Vedang; Goel, Vineeta; Tambe, Chandrashekar M; Dhote, Dipak S; Deshpande, Deepak D

2009-09-01

The purpose of this work was to estimate skin dose for the patients treated with tomotherapy using metal oxide semiconductor field-effect transistors (MOSFETs) and thermoluminescent dosimeters (TLDs). In vivo measurements were performed for two head and neck patients treated with tomotherapy and compared to TLD measurements. The measurements were subsequently carried out for five days to estimate the inter-fraction deviations in MOSFET measurements. The variation between skin dose measured with MOSFET and TLD for first patient was 2.2%. Similarly, the variation of 2.3% was observed between skin dose measured with MOSFET and TLD for second patient. The tomotherapy treatment planning system overestimated the skin dose as much as by 10-12% when compared to both MOSFET and TLD. However, the MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1% to 1.4%. MOSFETs may be used as a viable dosimeter for measuring skin dose in areas where the treatment planning system may not be accurate.

Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Chakraborty, Avik; Sarkar, Angsuman

2015-04-01

In this paper, the analog/RF performance of an III-V semiconductor based staggered hetero-tunnel-junction (HETJ) n-type nanowire (NW) tunneling FET (n-TFET) is investigated, for the first time. The device performance figure-of-merits governing the analog/RF performance such as transconductance (gm), transconductance-to-drive current ratio (gm/IDS), output resistance (Rout), intrinsic gain and unity-gain cutoff frequency (fT) have been studied. The analog/RF performance parameters is compared between HETJ NW TFET and a homojunction (HJ) NW n-type TFET of similar dimensions. In addition to enhanced ION and subthreshold swing, a significant improvement in the analog/RF performance parameters obtained by the HETJ n-TFET over HJ counterpart for use in analog/mixed signal System-on-Chip (SoC) applications is reported. Moreover, the analog/RF performance parameters of a III-V based staggered HETJ NW TFET is also compared with a heterojunction (HETJ) NW n-type MOSFET having same material as HETJ n-TFET and equal dimension in order to provide a systematic comparison between HETJ-TFET and HETJ-MOSFET for use in analog/mixed-signal applications. The results reveal that HETJ n-TFET provides higher Rout and hence, a higher intrinsic gain, an improved gm/IDS ratio, and reasonable fT at lower values of gate-overdrive voltage as compared to the HETJ NW n-MOSFET.

Dosimetric evaluation of a MOSFET detector for clinical application in photon therapy.

PubMed

Kohno, Ryosuke; Hirano, Eriko; Nishio, Teiji; Miyagishi, Tomoko; Goka, Tomonori; Kawashima, Mitsuhiko; Ogino, Takashi

2008-01-01

Dosimetric characteristics of a metal oxide-silicon semiconductor field effect transistor (MOSFET) detector are studied with megavoltage photon beams for patient dose verification. The major advantages of this detector are its size, which makes it a point dosimeter, and its ease of use. In order to use the MOSFET detector for dose verification of intensity-modulated radiation therapy (IMRT) and in-vivo dosimetry for radiation therapy, we need to evaluate the dosimetric properties of the MOSFET detector. Therefore, we investigated the reproducibility, dose-rate effect, accumulated-dose effect, angular dependence, and accuracy in tissue-maximum ratio measurements. Then, as it takes about 20 min in actual IMRT for the patient, we evaluated fading effect of MOSFET response. When the MOSFETs were read-out 20 min after irradiation, we observed a fading effect of 0.9% with 0.9% standard error of the mean. Further, we applied the MOSFET to the measurement of small field total scatter factor. The MOSFET for dose measurements of small field sizes was better than the reference pinpoint chamber with vertical direction. In conclusion, we assessed the accuracy, reliability, and usefulness of the MOSFET detector in clinical applications such as pinpoint absolute dosimetry for small fields.

Characterization of responses and comparison of calibration factor for commercial MOSFET detectors.

PubMed

Bharanidharan, Ganesan; Manigandan, Durai; Devan, Krishnamurthy; Subramani, Vellaiyan; Gopishankar, Natanasabapathi; Ganesh, Tharmar; Joshi, Rakeshchander; Rath, Gourakishore; Velmurugan, Jagadeesan; Aruna, Prakasarao; Ganesan, Singaravelu

2005-01-01

A commercial metal oxide silicon field effect transistor (MOSFET) dosimeter of model TN502-RD has been characterized for its linearity, reproducibility, field size dependency, dose rate dependency, and angular dependency for Cobalt-60 (60Co), 6-MV, and 15-MV beam energies. The performance of the MOSFET clearly shows that it is highly reproducible, independent of field size and dose rate. Furthermore, MOSFET has a very high degree of linearity, with r-value>0.9 for all 3 energies. The calibration factor for 2 similar MOSFET detectors of model TN502-RD were also estimated and compared for all 3 energies. The calibration factor between the 2 similar MOSFET detectors shows a variation of about 1.8% for 60Co and 15 MV, and for 6 MV it shows variation of about 2.5%, indicating that calibration should be done whenever a new MOSFET is used. However, the detector shows considerable angular dependency of about 8.8% variation. This may be due to the variation in radiation sensitivity between flat and bubble sides of the MOSFET, and indicates that positional care must be taken while using MOSFET for stereotactic radiosurgery and stereotactic radiotherapy dosimetric applications.

Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing

DTIC Science & Technology

2015-02-15

currently valid OMB control number . PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD-MM-YYYY) 20-04-2015 2. REPORT TYPE...of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing 5a. CONTRACT NUMBER FA2386-11-1-4077 5b. GRANT NUMBER Grant AOARD...114077 5c. PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S) Prof. Robert Wallace 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7

Development of an efficient DC-DC SEPIC converter using wide bandgap power devices for high step-up applications

NASA Astrophysics Data System (ADS)

Al-bayati, Ali M. S.; Alharbi, Salah S.; Alharbi, Saleh S.; Matin, Mohammad

2017-08-01

A highly efficient high step-up dc-dc converter is the major requirement in the integration of low voltage renewable energy sources, such as photovoltaic panel module and fuel cell stacks, with a load or utility. This paper presents the development of an efficient dc-dc single-ended primary-inductor converter (SEPIC) for high step-up applications. Three SEPIC converters are designed and studied using different combinations of power devices: a combination based on all Si power devices using a Si-MOSFET and a Si-diode and termed as Si/Si, a combination based on a hybrid of Si and SiC power devices using the Si-MOSFET and a SiC-Schottky diode and termed as Si/SiC, and a combination based on all SiC power devices using a SiC-MOSFET and the SiC-Schottky diode and termed as SiC/SiC. The switching behavior of the Si-MOSFET and SiC-MOSFET is characterized and analyzed within the different combinations at the converter level. The effect of the diode type on the converter's overall performance is also discussed. The switching energy losses, total power losses, and the overall performance effciency of the converters are measured and reported under different switching frequencies. Furthermore, the potential of the designed converters to operate efficiently at a wide range of input voltages and output powers is studied. The analysis and results show an outstanding performance efficiency of the designed SiC/SiC based converter under a wide range of operating conditions.

Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

PubMed

Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

2018-05-08

A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

Response Variability in Commercial MOSFET SEE Qualification

DOE PAGES

George, J. S.; Clymer, D. A.; Turflinger, T. L.; ...

2016-12-01

Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (V DS) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample sizes may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Finally, burn-in is shown to be a criticalmore » factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored.« less

Response Variability in Commercial MOSFET SEE Qualification

DOE Office of Scientific and Technical Information (OSTI.GOV)

George, J. S.; Clymer, D. A.; Turflinger, T. L.

Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (V DS) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample sizes may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Finally, burn-in is shown to be a criticalmore » factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored.« less

Monolithic integration of a MOSFET with a MEMS device

DOEpatents

Bennett, Reid; Draper, Bruce

2003-01-01

An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.

Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer

NASA Astrophysics Data System (ADS)

Matsumoto, Tsubasa; Kato, Hiromitsu; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Yamasaki, Satoshi; Imura, Masataka; Ueda, Akihiro; Inokuma, Takao; Tokuda, Norio

2018-04-01

The electrical properties of Al2O3/p-type diamond (111) MOS capacitors were studied with the goal of furthering diamond-based semiconductor research. To confirm the formation of an inversion layer in the p-type diamond body, an n-type layer for use as a minority carrier injection layer was selectively deposited onto p-type diamond. To form the diamond MOS capacitors, Al2O3 was deposited onto OH-terminated diamond using atomic layer deposition. The MOS capacitor showed clear inversion capacitance at 10 Hz. The minority carrier injection from the n-type layer reached the inversion n-channel diamond MOS field-effect transistor (MOSFET). Using the high-low frequency capacitance method, the interface state density, D it, within an energy range of 0.1-0.5 eV from the valence band edge energy, E v, was estimated at (4-9) × 1012 cm-2 eV-1. However, the high D it near E v remains an obstacle to improving the field effect mobility for the inversion p-channel diamond MOSFET.

Silicon Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan; Campola, Michael; Ladbury, Raymond; Label, Kenneth; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

2017-01-01

Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.

Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukhopadhyay, A., E-mail: arnabm.electinstru@gmail.com; Banerjee, L.; Sengupta, A.

We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction,more » by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects.« less

A physical anthropomorphic phantom of a one year old child with real-time dosimetry

NASA Astrophysics Data System (ADS)

Bower, Mark William

A physical heterogeneous phantom has been created with epoxy resin based tissue substitutes. The phantom is based on the Cristy and Eckerman mathematical phantom which in turn is a modification of the Medical Internal Radiation Dose (MIRD) model of a one-year-old child as presented by the Society of Nuclear Medicine. The Cristy and Eckerman mathematical phantom, and the physical phantom, are comprised of three different tissue types: bone, lung tissue and soft tissue. The bone tissue substitute is a homogenous mixture of bone tissues: active marrow, inactive marrow, trabecular bone, and cortical bone. Soft tissue organs are represented by a homogeneous soft tissue substitute at a particular location. Point doses were measured within the phantom with a Metal Oxide Semiconductor Field Effect Transistor (MOSFET)- based Patient Dose Verification System modified from the original radiotherapy application. The system features multiple dosimeters that are used to monitor entrance or exit skin doses and intracavity doses in the phantom in real-time. Two different MOSFET devices were evaluated: the typical therapy MOSFET and a developmental MOSFET device that has an oxide layer twice as thick as the therapy MOSFET thus making it of higher sensitivity. The average sensitivity (free-in-air, including backscatter) of the 'high-sensitivity' MOSFET dosimeters ranged from 1.15×105 mV per C kg-1 (29.7 mV/R) to 1.38×105 mV per C kg-1 (35.7 mV/R) depending on the energy of the x-ray field. The integrated physical phantom was utilized to obtain point measurements of the absorbed dose from diagnostic x-ray examinations. Organ doses were calculated based on these point dose measurements. The phantom dosimetry system functioned well providing real-time measurement of the dose to particular organs. The system was less reliable at low doses where the main contribution to the dose was from scattered radiation. The system also was of limited utility for determining the absorbed dose in larger systems such as the skeleton. The point dose method of estimating the organ dose to large disperse organs such as this are of questionable accuracy since only a limited number of points are measured in a field with potentially large exposure variations. The MOSFET system was simple to use and considerably faster than traditional thermoluminescent dosimetry. The one-year-old simulated phantom with the real-time MOSFET dosimeters provides a method to easily evaluate the risk to a previously understudied population from diagnostic radiographic procedures.

Characterization of MOSFET dosimeters for low‐dose measurements in maxillofacial anthropomorphic phantoms

PubMed Central

Wolff, Jan E.; Kiljunen, Timo; Schulze, Dirk; Kortesniemi, Mika

2015-01-01

The aims of this study were to characterize reinforced metal‐oxide‐semiconductor field‐effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low‐dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivities for two dental photon energy ranges, dose dependency, dose rate dependency, and accumulated dose dependency. A further aim was to compare the performance of MOSFETs with those of TLDs in an anthropomorphic phantom head using a dentomaxillofacial CBCT device. The uncertainty was assessed by exposing 20 MOSFETs and a Barracuda MPD reference dosimeter. The MOSFET dosimeter sensitivities were evaluated for two photon energy ranges (50–90 kVp) using a constant dose and polymethylmethacrylate backscatter material. MOSFET and TLD comparative point‐dose measurements were performed on an anthropomorphic phantom that was exposed with a clinical CBCT protocol. The MOSFET single exposure low dose limit (25% uncertainty, k=2) was 1.69 mGy. An averaging of eight MOSFET exposures was required to attain the corresponding TLD (0.3 mGy) low‐dose limit. The sensitivity was 3.09±0.13 mV/mGy independently of the photon energy used. The MOSFET dosimeters did not present dose or dose rate sensitivity but, however, presented a 1% decrease of sensitivity per 1000 mV for accumulated threshold voltages between 8300 mV and 17500 mV. The point doses in an anthropomorphic phantom ranged for MOSFETs between 0.24 mGy and 2.29 mGy and for TLDs between 0.25 and 2.09 mGy, respectively. The mean difference was −8%. The MOSFET dosimeters presented statistically insignificant energy dependency. By averaging multiple exposures, the MOSFET dosimeters can achieve a TLD‐comparable low‐dose limit and constitute a feasible method for diagnostic dosimetry using anthropomorphic phantoms. However, for single in vivo measurements (<1.7 mGy) the sensitivity is too low. PACS number: 87.50.wj PMID:26219008

Dosimetry investigation of MOSFET for clinical IMRT dose verification.

PubMed

Deshpande, Sudesh; Kumar, Rajesh; Ghadi, Yogesh; Neharu, R M; Kannan, V

2013-06-01

In IMRT, patient-specific dose verification is followed regularly at each centre. Simple and efficient dosimetry techniques play a very important role in routine clinical dosimetry QA. The MOSFET dosimeter offers several advantages over the conventional dosimeters such as its small detector size, immediate readout, immediate reuse, multiple point dose measurements. To use the MOSFET as routine clinical dosimetry system for pre-treatment dose verification in IMRT, a comprehensive set of experiments has been conducted, to investigate its linearity, reproducibility, dose rate effect and angular dependence for 6 MV x-ray beam. The MOSFETs shows a linear response with linearity coefficient of 0.992 for a dose range of 35 cGy to 427 cGy. The reproducibility of the MOSFET was measured by irradiating the MOSFET for ten consecutive irradiations in the dose range of 35 cGy to 427 cGy. The measured reproducibility of MOSFET was found to be within 4% up to 70 cGy and within 1.4% above 70 cGy. The dose rate effect on the MOSFET was investigated in the dose rate range 100 MU/min to 600 MU/min. The response of the MOSFET varies from -1.7% to 2.1%. The angular responses of the MOSFETs were measured at 10 degrees intervals from 90 to 270 degrees in an anticlockwise direction and normalized at gantry angle zero and it was found to be in the range of 0.98 ± 0.014 to 1.01 ± 0.014. The MOSFETs were calibrated in a phantom which was later used for IMRT verification. The measured calibration coefficients were found to be 1 mV/cGy and 2.995 mV/cGy in standard and high sensitivity mode respectively. The MOSFETs were used for pre-treatment dose verification in IMRT. Nine dosimeters were used for each patient to measure the dose in different plane. The average variation between calculated and measured dose at any location was within 3%. Dose verification using MOSFET and IMRT phantom was found to quick and efficient and well suited for a busy radiotherapy department.

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

NASA Astrophysics Data System (ADS)

Li, Yun; Jiang, Hai; Lun, Zhiyuan; Wang, Yijiao; Huang, Peng; Hao, Hao; Du, Gang; Zhang, Xing; Liu, Xiaoyan

2016-04-01

Degradation behaviors in the high-k/metal gate stacks of nMOSFETs are investigated by three-dimensional (3D) kinetic Monte-Carlo (KMC) simulation with multiple trap coupling. Novel microscopic mechanisms are simultaneously considered in a compound system: (1) trapping/detrapping from/to substrate/gate; (2) trapping/detrapping to other traps; (3) trap generation and recombination. Interacting traps can contribute to random telegraph noise (RTN), bias temperature instability (BTI), and trap-assisted tunneling (TAT). Simulation results show that trap interaction induces higher probability and greater complexity in trapping/detrapping processes and greatly affects the characteristics of RTN and BTI. Different types of trap distribution cause largely different behaviors of RTN, BTI, and TAT. TAT currents caused by multiple trap coupling are sensitive to the gate voltage. Moreover, trap generation and recombination have great effects on the degradation of HfO2-based nMOSFETs under a large stress.

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation.

PubMed

Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

2017-04-04

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (-1.8 and -0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (-2.95 and -3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dB m input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dB m at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dB m at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dB m input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (-48.34, -44.21, -48.34, and -46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (-45.61, -41.57, -45.01, and -45.51 dB, respectively). When five-cycle 20 dB m input power was applied, the second, third, fourth, and fifth harmonic distortions of the HVPA with the power MOSFET linearizer (-41.54, -41.80, -48.86, and -46.27 dB, respectively) were also lower than that of the HVPA without the power MOSFET linearizer (-25.85, -43.56, -49.04, and -49.24 dB, respectively). Therefore, we conclude that the power MOSFET linearizer could reduce gain deviation of the HVPA, thus reducing the echo signal harmonic distortions generated by the high-frequency ultrasonic transducers in pulse-echo instrumentation.

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation

PubMed Central

Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

2017-01-01

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (−1.8 and −0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (−2.95 and −3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dBm input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dBm at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dBm at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dBm input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (−48.34, −44.21, −48.34, and −46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (−45.61, −41.57, −45.01, and −45.51 dB, respectively). When five-cycle 20 dBm input power was applied, the second, third, fourth, and fifth harmonic distortions of the HVPA with the power MOSFET linearizer (−41.54, −41.80, −48.86, and −46.27 dB, respectively) were also lower than that of the HVPA without the power MOSFET linearizer (−25.85, −43.56, −49.04, and −49.24 dB, respectively). Therefore, we conclude that the power MOSFET linearizer could reduce gain deviation of the HVPA, thus reducing the echo signal harmonic distortions generated by the high-frequency ultrasonic transducers in pulse-echo instrumentation. PMID:28375165

NOTE: Clinical application of a OneDose™ MOSFET for skin dose measurements during internal mammary chain irradiation with high dose rate brachytherapy in carcinoma of the breast

NASA Astrophysics Data System (ADS)

Kinhikar, Rajesh A.; Sharma, Pramod K.; Tambe, Chandrashekhar M.; Mahantshetty, Umesh M.; Sarin, Rajiv; Deshpande, Deepak D.; Shrivastava, Shyam K.

2006-07-01

In our earlier study, we experimentally evaluated the characteristics of a newly designed metal oxide semiconductor field effect transistor (MOSFET) OneDose™ in-vivo dosimetry system for Ir-192 (380 keV) energy and the results were compared with thermoluminescent dosimeters (TLDs). We have now extended the same study to the clinical application of this MOSFET as an in-vivo dosimetry system. The MOSFET was used during high dose rate brachytherapy (HDRBT) of internal mammary chain (IMC) irradiation for a carcinoma of the breast. The aim of this study was to measure the skin dose during IMC irradiation with a MOSFET and a TLD and compare it with the calculated dose with a treatment planning system (TPS). The skin dose was measured for ten patients. All the patients' treatment was planned on a PLATO treatment planning system. TLD measurements were performed to compare the accuracy of the measured results from the MOSFET. The mean doses measured with the MOSFET and the TLD were identical (0.5392 Gy, 15.85% of the prescribed dose). The mean dose was overestimated by the TPS and was 0.5923 Gy (17.42% of the prescribed dose). The TPS overestimated the skin dose by 9% as verified by the MOSFET and TLD. The MOSFET provides adequate in-vivo dosimetry for HDRBT. Immediate readout after irradiation, small size, permanent storage of dose and ease of use make the MOSFET a viable alternative for TLDs.

Clinical application of a OneDose MOSFET for skin dose measurements during internal mammary chain irradiation with high dose rate brachytherapy in carcinoma of the breast.

PubMed

Kinhikar, Rajesh A; Sharma, Pramod K; Tambe, Chandrashekhar M; Mahantshetty, Umesh M; Sarin, Rajiv; Deshpande, Deepak D; Shrivastava, Shyam K

2006-07-21

In our earlier study, we experimentally evaluated the characteristics of a newly designed metal oxide semiconductor field effect transistor (MOSFET) OneDose in-vivo dosimetry system for Ir-192 (380 keV) energy and the results were compared with thermoluminescent dosimeters (TLDs). We have now extended the same study to the clinical application of this MOSFET as an in-vivo dosimetry system. The MOSFET was used during high dose rate brachytherapy (HDRBT) of internal mammary chain (IMC) irradiation for a carcinoma of the breast. The aim of this study was to measure the skin dose during IMC irradiation with a MOSFET and a TLD and compare it with the calculated dose with a treatment planning system (TPS). The skin dose was measured for ten patients. All the patients' treatment was planned on a PLATO treatment planning system. TLD measurements were performed to compare the accuracy of the measured results from the MOSFET. The mean doses measured with the MOSFET and the TLD were identical (0.5392 Gy, 15.85% of the prescribed dose). The mean dose was overestimated by the TPS and was 0.5923 Gy (17.42% of the prescribed dose). The TPS overestimated the skin dose by 9% as verified by the MOSFET and TLD. The MOSFET provides adequate in-vivo dosimetry for HDRBT. Immediate readout after irradiation, small size, permanent storage of dose and ease of use make the MOSFET a viable alternative for TLDs.

Comparative study on skin dose measurement using MOSFET and TLD for pediatric patients with acute lymphatic leukemia.

PubMed

Al-Mohammed, Huda I; Mahyoub, Fareed H; Moftah, Belal A

2010-07-01

The object of this study was to compare the difference of skin dose measured in patients with acute lymphatic leukemia (ALL) treated with total body irradiation (TBI) using metal oxide semiconductor field-effect transistors (mobile MOSFET dose verification system (TN-RD-70-W) and thermoluminescent dosimeters (TLD-100 chips, Harshaw/ Bicron, OH, USA). Because TLD has been the most-commonly used technique in the skin dose measurement of TBI, the aim of the present study is to prove the benefit of using the mobile MOSFET (metal oxide semiconductor field effect transistor) dosimeter, for entrance dose measurements during the total body irradiation (TBI) over thermoluminescent dosimeters (TLD). The measurements involved 10 pediatric patients ages between 3 and 14 years. Thermoluminescent dosimeters and MOSFET dosimetry were performed at 9 different anatomic sites on each patient. The present results show there is a variation between skin dose measured with MOSFET and TLD in all patients, and for every anatomic site selected, there is no significant difference in the dose delivered using MOSFET as compared to the prescribed dose. However, there is a significant difference for every anatomic site using TLD compared with either the prescribed dose or MOSFET. The results indicate that the dosimeter measurements using the MOSFET gave precise measurements of prescribed dose. However, TLD measurement showed significant increased skin dose of cGy as compared to either prescribed dose or MOSFET group. MOSFET dosimeters provide superior dose accuracy for skin dose measurement in TBI as compared with TLD.

An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors.

PubMed

Liu, Jiangwei; Koide, Yasuo

2018-06-04

Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high- k oxides on hydrogenated-diamond (H-diamond) for metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. High- k oxide insulators are deposited using atomic layer deposition (ALD) and sputtering deposition (SD) techniques. Electrical properties of the H-diamond MOS capacitors with high- k oxides of ALD-Al₂O₃, ALD-HfO₂, ALD-HfO₂/ALD-Al₂O₃ multilayer, SD-HfO₂/ALD-HfO₂ bilayer, SD-TiO₂/ALD-Al₂O₃ bilayer, and ALD-TiO₂/ALD-Al₂O₃ bilayer are discussed. Analyses for capacitance-voltage characteristics of them show that there are low fixed and trapped charge densities for the ALD-Al₂O₃/H-diamond and SD-HfO₂/ALD-HfO₂/H-diamond MOS capacitors. The k value of 27.2 for the ALD-TiO₂/ALD-Al₂O₃ bilayer is larger than those of the other oxide insulators. Drain-source current versus voltage curves show distinct pitch-off and p -type channel characteristics for the ALD-Al₂O₃/H-diamond, SD-HfO₂/ALD-HfO₂/H-diamond, and ALD-TiO₂/ALD-Al₂O₃/H-diamond MOSFETs. Understanding of fabrication routines and electrical properties for the high- k oxide/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOSFET gas sensors.

Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

NASA Astrophysics Data System (ADS)

Maekawa, Keiichi; Makiyama, Hideki; Yamamoto, Yoshiki; Hasegawa, Takumi; Okanishi, Shinobu; Sonoda, Kenichiro; Shinkawata, Hiroki; Yamashita, Tomohiro; Kamohara, Shiro; Yamaguchi, Yasuo

2018-04-01

The low-frequency noise (LFN) variability in bulk and fully depleted silicon-on-insulator (FDSOI) metal–oxide–semiconductor field-effect transistor (MOSFET) with silicon on thin box (SOTB) technology was investigated. LFN typically shows a flicker noise component and a signal Lorentzian component by random telegraph noise (RTN). At a weak inversion state, the random dopant fluctuation (RDF) in a channel is strongly affected to not only RTN variability but also flicker noise variability in the bulk MOSFET compared with SOTB MOSFET because of local carrier number fluctuation in the channel. On the other hand, the typical level of LFN in SOTB MOSFET is slightly larger than that in the bulk MOSFET because of an additional interface on the buried oxide layer. However, considering the tailing characteristics of LFN variability, LFN in SOTB MOSFET can be assumed to be smaller than that in the bulk MOSFET, which enables the low-voltage operation of analog circuits.

Single-Event Effect Testing of the Vishay Si7414DN n-Type TrenchFET(Registered Trademark) Power MOSFET

NASA Technical Reports Server (NTRS)

Lauenstein, J.-M.; Casey, M. C.; Campola, M. A.; Phan, A. M.; Wilcox, E. P.; Topper, A. D.; Ladbury, R. L.

2017-01-01

This study was being undertaken to determine the single event effect susceptibility of the commercial Vishay 60-V TrenchFET power MOSFET. Heavy-ion testing was conducted at the Texas AM University Cyclotron Single Event Effects Test Facility (TAMU) and the Lawrence Berkeley National Laboratory BASE Cyclotron Facility (LBNL). In addition, initial 200-MeV proton testing was conducted at Massachusetts General Hospital (MGH) Francis H. Burr Proton Beam Therapy Center. Testing was performed to evaluate this device for single-event effects from lower-LET, lighter ions relevant to higher risk tolerant space missions.

Build-up and surface dose measurements on phantoms using micro-MOSFET in 6 and 10 MV x-ray beams and comparisons with Monte Carlo calculations.

PubMed

Xiang, Hong F; Song, Jun S; Chin, David W H; Cormack, Robert A; Tishler, Roy B; Makrigiorgos, G Mike; Court, Laurence E; Chin, Lee M

2007-04-01

This work is intended to investigate the application and accuracy of micro-MOSFET for superficial dose measurement under clinically used MV x-ray beams. Dose response of micro-MOSFET in the build-up region and on surface under MV x-ray beams were measured and compared to Monte Carlo calculations. First, percentage-depth-doses were measured with micro-MOSFET under 6 and 10 MV beams of normal incidence onto a flat solid water phantom. Micro-MOSFET data were compared with the measurements from a parallel plate ionization chamber and Monte Carlo dose calculation in the build-up region. Then, percentage-depth-doses were measured for oblique beams at 0 degrees-80 degrees onto the flat solid water phantom with micro-MOSFET placed at depths of 2 cm, 1 cm, and 2 mm below the surface. Measurements were compared to Monte Carlo calculations under these settings. Finally, measurements were performed with micro-MOSFET embedded in the first 1 mm layer of bolus placed on a flat phantom and a curved phantom of semi-cylindrical shape. Results were compared to superficial dose calculated from Monte Carlo for a 2 mm thin layer that extends from the surface to a depth of 2 mm. Results were (1) Comparison of measurements with MC calculation in the build-up region showed that micro-MOSFET has a water-equivalence thickness (WET) of 0.87 mm for 6 MV beam and 0.99 mm for 10 MV beam from the flat side, and a WET of 0.72 mm for 6 MV beam and 0.76 mm for 10 MV beam from the epoxy side. (2) For normal beam incidences, percentage depth dose agree within 3%-5% among micro-MOSFET measurements, parallel-plate ionization chamber measurements, and MC calculations. (3) For oblique incidence on the flat phantom with micro-MOSFET placed at depths of 2 cm, 1 cm, and 2 mm, measurements were consistent with MC calculations within a typical uncertainty of 3%-5%. (4) For oblique incidence on the flat phantom and a curved-surface phantom, measurements with micro-MOSFET placed at 1.0 mm agrees with the MC calculation within 6%, including uncertainties of micro-MOSFET measurements of 2%-3% (1 standard deviation), MOSFET angular dependence of 3.0%-3.5%, and 1%-2% systematical error due to phantom setup geometry asymmetry. Micro-MOSFET can be used for skin dose measurements in 6 and 10 MV beams with an estimated accuracy of +/- 6%.

Effective dose assessment in the maxillofacial region using thermoluminescent (TLD) and metal oxide semiconductor field-effect transistor (MOSFET) dosemeters: a comparative study.

PubMed

Koivisto, J; Schulze, D; Wolff, J; Rottke, D

2014-01-01

The objective of this study was to compare the performance of metal oxide semiconductor field-effect transistor (MOSFET) technology dosemeters with thermoluminescent dosemeters (TLDs) (TLD 100; Thermo Fisher Scientific, Waltham, MA) in the maxillofacial area. Organ and effective dose measurements were performed using 40 TLD and 20 MOSFET dosemeters that were alternately placed in 20 different locations in 1 anthropomorphic RANDO(®) head phantom (the Phantom Laboratory, Salem, NY). The phantom was exposed to four different CBCT default maxillofacial protocols using small (4 × 5 cm) to full face (20 × 17 cm) fields of view (FOVs). The TLD effective doses ranged between 7.0 and 158.0 µSv and the MOSFET doses between 6.1 and 175.0 µSv. The MOSFET and TLD effective doses acquired using four different (FOV) protocols were as follows: face maxillofacial (FOV 20 × 17 cm) (MOSFET, 83.4 µSv; TLD, 87.6 µSv; -5%); teeth, upper jaw (FOV, 8.5 × 5.0 cm) (MOSFET, 6.1 µSv; TLD, 7.0 µSv; -14%); tooth, mandible and left molar (FOV, 4 × 5 cm) (MOSFET, 10.3 µSv; TLD, 12.3 µSv; -16%) and teeth, both jaws (FOV, 10 × 10 cm) (MOSFET, 175 µSv; TLD, 158 µSv; +11%). The largest variation in organ and effective dose was recorded in the small FOV protocols. Taking into account the uncertainties of both measurement methods and the results of the statistical analysis, the effective doses acquired using MOSFET dosemeters were found to be in good agreement with those obtained using TLD dosemeters. The MOSFET dosemeters constitute a feasible alternative for TLDs for the effective dose assessment of CBCT devices in the maxillofacial region.

CMOS-compatible batch processing of monolayer MoS2 MOSFETs

NASA Astrophysics Data System (ADS)

Xiong, Kuanchen; Kim, Hyun; Marstell, Roderick J.; Göritz, Alexander; Wipf, Christian; Li, Lei; Park, Ji-Hoon; Luo, Xi; Wietstruck, Matthias; Madjar, Asher; Strandwitz, Nicholas C.; Kaynak, Mehmet; Lee, Young Hee; Hwang, James C. M.

2018-04-01

Thousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS2 with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS2 and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS2 MOSFETs, whether the MoS2 was grown by a thin-film process or exfoliated from a bulk crystal.

Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry.

PubMed

Luo, Guang-Wen; Qi, Zhen-Yu; Deng, Xiao-Wu; Rosenfeld, Anatoly

2014-05-01

To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters for in vivo intensity modulated radiation therapy (IMRT) dosimetry. Several MOSFETs were irradiated at d(max) using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

Monte carlo study of MOSFET packaging, optimised for improved energy response: single MOSFET filtration.

PubMed

Othman, M A R; Cutajar, D L; Hardcastle, N; Guatelli, S; Rosenfeld, A B

2010-09-01

Monte Carlo simulations of the energy response of a conventionally packaged single metal-oxide field effect transistors (MOSFET) detector were performed with the goal of improving MOSFET energy dependence for personal accident or military dosimetry. The MOSFET detector packaging was optimised. Two different 'drop-in' design packages for a single MOSFET detector were modelled and optimised using the GEANT4 Monte Carlo toolkit. Absorbed photon dose simulations of the MOSFET dosemeter placed in free-air response, corresponding to the absorbed doses at depths of 0.07 mm (D(w)(0.07)) and 10 mm (D(w)(10)) in a water equivalent phantom of size 30 x 30 x 30 cm(3) for photon energies of 0.015-2 MeV were performed. Energy dependence was reduced to within + or - 60 % for photon energies 0.06-2 MeV for both D(w)(0.07) and D(w)(10). Variations in the response for photon energies of 15-60 keV were 200 and 330 % for D(w)(0.07) and D(w)(10), respectively. The obtained energy dependence was reduced compared with that for conventionally packaged MOSFET detectors, which usually exhibit a 500-700 % over-response when used in free-air geometry.

Assessment of radiation exposure in dental cone-beam computerized tomography with the use of metal-oxide semiconductor field-effect transistor (MOSFET) dosimeters and Monte Carlo simulations.

PubMed

Koivisto, J; Kiljunen, T; Tapiovaara, M; Wolff, J; Kortesniemi, M

2012-09-01

The aims of this study were to assess the organ and effective dose (International Commission on Radiological Protection (ICRP) 103) resulting from dental cone-beam computerized tomography (CBCT) imaging using a novel metal-oxide semiconductor field-effect transistor (MOSFET) dosimeter device, and to assess the reliability of the MOSFET measurements by comparing the results with Monte Carlo PCXMC simulations. Organ dose measurements were performed using 20 MOSFET dosimeters that were embedded in the 8 most radiosensitive organs in the maxillofacial and neck area. The dose-area product (DAP) values attained from CBCT scans were used for PCXMC simulations. The acquired MOSFET doses were then compared with the Monte Carlo simulations. The effective dose measurements using MOSFET dosimeters yielded, using 0.5-cm steps, a value of 153 μSv and the PCXMC simulations resulted in a value of 136 μSv. The MOSFET dosimeters placed in a head phantom gave results similar to Monte Carlo simulations. Minor vertical changes in the positioning of the phantom had a substantial affect on the overall effective dose. Therefore, the MOSFET dosimeters constitute a feasible method for dose assessment of CBCT units in the maxillofacial region. Copyright © 2012 Elsevier Inc. All rights reserved.

Characterization of MOSFET detectors for in vivo dosimetry in interventional radiology and for dose reconstruction in case of overexposure.

PubMed

Bassinet, Céline; Huet, Christelle; Baumann, Marion; Etard, Cécile; Réhel, Jean-Luc; Boisserie, Gilbert; Debroas, Jacques; Aubert, Bernard; Clairand, Isabelle

2013-04-01

As MOSFET (Metal Oxide Semiconductor Field Effect Transistor) detectors allow dose measurements in real time, the interest in these dosimeters is growing. The aim of this study was to investigate the dosimetric properties of commercially available TN-502RD-H MOSFET silicon detectors (Best Medical Canada, Ottawa, Canada) in order to use them for in vivo dosimetry in interventional radiology and for dose reconstruction in case of overexposure. Reproducibility of the measurements, dose rate dependence, and dose response of the MOSFET detectors have been studied with a Co source. Influence of the dose rate, frequency, and pulse duration on MOSFET responses has also been studied in pulsed x-ray fields. Finally, in order to validate the integrated dose given by MOSFET detectors, MOSFETs and TLDs (LiF:Mg,Cu,P) were fixed on an Alderson-Rando phantom in the conditions of an interventional neuroradiology procedure, and their responses have been compared. The results of this study show the suitability of MOSFET detectors for in vivo dosimetry in interventional radiology and for dose reconstruction in case of accident, provided a well-corrected energy dependence, a pulse duration equal to or higher than 10 ms, and an optimized contact between the detector and the skin of the patient are achieved.

MOSFET's for Cryogenic Amplifiers

NASA Technical Reports Server (NTRS)

Dehaye, R.; Ventrice, C. A.

1987-01-01

Study seeks ways to build transistors that function effectively at liquid-helium temperatures. Report discusses physics of metaloxide/semiconductor field-effect transistors (MOSFET's) and performances of these devices at cryogenic temperatures. MOSFET's useful in highly sensitive cryogenic preamplifiers for infrared astronomy.

Study on effective MOSFET channel length extracted from gate capacitance

NASA Astrophysics Data System (ADS)

Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

2018-01-01

The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

NASA Astrophysics Data System (ADS)

Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

2009-03-01

In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, gm/ID, etc) for the sub-100 nm technologies.

Image guided IMRT dosimetry using anatomy specific MOSFET configurations.

PubMed

Amin, Md Nurul; Norrlinger, Bern; Heaton, Robert; Islam, Mohammad

2008-06-23

We have investigated the feasibility of using a set of multiple MOSFETs in conjunction with the mobile MOSFET wireless dosimetry system, to perform a comprehensive and efficient quality assurance (QA) of IMRT plans. Anatomy specific MOSFET configurations incorporating 5 MOSFETs have been developed for a specially designed IMRT dosimetry phantom. Kilovoltage cone beam computed tomography (kV CBCT) imaging was used to increase the positional precision and accuracy of the detectors and phantom, and so minimize dosimetric uncertainties in high dose gradient regions. The effectiveness of the MOSFET based dose measurements was evaluated by comparing the corresponding doses measured by an ion chamber. For 20 head and neck IMRT plans the agreement between the MOSFET and ionization chamber dose measurements was found to be within -0.26 +/- 0.88% and 0.06 +/- 1.94% (1 sigma) for measurement points in the high dose and low dose respectively. A precision of 1 mm in detector positioning was achieved by using the X-Ray Volume Imaging (XVI) kV CBCT system available with the Elekta Synergy Linear Accelerator. Using the anatomy specific MOSFET configurations, simultaneous measurements were made at five strategically located points covering high dose and low dose regions. The agreement between measurements and calculated doses by the treatment planning system for head and neck and prostate IMRT plans was found to be within 0.47 +/- 2.45%. The results indicate that a cylindrical phantom incorporating multiple MOSFET detectors arranged in an anatomy specific configuration, in conjunction with image guidance, can be utilized to perform a comprehensive and efficient quality assurance of IMRT plans.

Direct and pulsed current annealing of p-MOSFET based dosimeter: the "MOSkin".

PubMed

Alshaikh, Sami; Carolan, Martin; Petasecca, Marco; Lerch, Michael; Metcalfe, Peter; Rosenfeld, Anatoly

2014-06-01

Contemporary radiation therapy (RT) is complicated and requires sophisticated real-time quality assurance (QA). While 3D real-time dosimetry is most preferable in RT, it is currently not fully realised. A small, easy to use and inexpensive point dosimeter with real-time and in vivo capabilities is an option for routine QA. Such a dosimeter is essential for skin, in vivo or interface dosimetry in phantoms for treatment plan verification. The metal-oxide-semiconductor-field-effect-transistor (MOSFET) detector is one of the best choices for these purposes, however, the MOSFETs sensitivity and its signal stability degrade after essential irradiation which limits its lifespan. The accumulation of positive charge on the gate oxide and the creation of interface traps near the silicon-silicon dioxide layer is the primary physical phenomena responsible for this degradation. The aim of this study is to investigate MOSFET dosimeter recovery using two proposed annealing techniques: direct current (DC) and pulsed current (PC), both based on hot charged carrier injection into the gate oxide of the p-MOSFET dosimeter. The investigated MOSFETs were reused multiple times using an irradiation-annealing cycle. The effect of the current-annealing parameters was investigated for the dosimetric characteristics of the recovered MOSFET dosimeters such as linearity, sensitivity and initial threshold voltage. Both annealing techniques demonstrated excellent results in terms of maintaining a stable response, linearity and sensitivity of the MOSFET dosimeter. However, PC annealing is more preferable than DC annealing as it offers better dose response linearity of the reused MOSFET and has a very short annealing time.

Small field electron beam dosimetry using MOSFET detector.

PubMed

Amin, Md Nurul; Heaton, Robert; Norrlinger, Bern; Islam, Mohammad K

2010-10-04

The dosimetry of very small electron fields can be challenging due to relative shifts in percent depth-dose curves, including the location of dmax, and lack of lateral electronic equilibrium in an ion chamber when placed in the beam. Conventionally a small parallel plate chamber or film is utilized to perform small field electron beam dosimetry. Since modern radiotherapy departments are becoming filmless in favor of electronic imaging, an alternate and readily available clinical dosimeter needs to be explored. We have studied the performance of MOSFET as a relative dosimeter in small field electron beams. The reproducibility, linearity and sensitivity of a high-sensitivity microMOSFET were investigated for clinical electron beams. In addition, the percent depth doses, output factors and profiles have been measured in a water tank with MOSFET and compared with those measured by an ion chamber for a range of field sizes from 1 cm diameter to 10 cm × 10 cm for 6, 12, 16 and 20 MeV beams. Similar comparative measurements were also per-formed with MOSFET and films in solid water phantom. The MOSFET sensitivity was found to be practically constant over the range of field sizes investigated. The dose response was found to be linear and reproducible (within ± 1% for 100 cGy). An excellent agreement was observed among the central axis depth dose curves measured using MOSFET, film and ion chamber. The output factors measured with MOSFET for small fields agreed to within 3% with those measured by film dosimetry. Overall results indicate that MOSFET can be utilized to perform dosimetry for small field electron beam.

Fabrication and characteristics of MOSFET protein chip for detection of ribosomal protein.

PubMed

Park, Keun-Yong; Kim, Min-Suk; Choi, Sie-Young

2005-04-15

A metal oxide silicon field effect transistor (MOSFET) protein chip for the easy detection of protein was fabricated and its characteristics were investigated. Generally, the drain current of the MOSFET is varied by the gate potential. It is expected that the formation of an antibody-antigen complex on the gate of MOSFET would lead to a detectable change in the charge distribution and thus, directly modulate the drain current of MOSFET. As such, the drain current of the MOSFET protein chip can be varied by ribosomal proteins absorbed by the self-assembled monolayer (SAM) immobilized on the gate (Au) surface, as ribosomal protein has positive charge, and these current variations then used as the response of the protein chip. The gate of MOSFET protein chip is not directly biased by an external voltage source, so called open gate or floating gate MOSFET, but rather chemically modified by immobilized molecular receptors called self-assembled monolayer (SAM). In our experiments, the current variation in the proposed protein chip was about 8% with a protein concentration of 0.7 mM. As the protein concentration increased, the drain current also gradually increased. In addition, there were some drift of the drain current in the device. It is considered that these drift might be caused by the drift from the MOSFET itself or protein absorption procedures that are relied on the facile attachment of thiol (-S) ligands to the gate (Au) surface. We verified the formation of SAM on the gold surface and the absorption of protein through the surface plasmon resonance (SPR) measurement.

Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

NASA Technical Reports Server (NTRS)

Lee, F. C.; Chen, D. Y.; Jovanovic, M.; Hopkins, D. C.

1985-01-01

The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature

NASA Astrophysics Data System (ADS)

Sasaki, Tomoyuki; Ando, Yuichiro; Kameno, Makoto; Tahara, Takayuki; Koike, Hayato; Oikawa, Tohru; Suzuki, Toshio; Shiraishi, Masashi

2014-09-01

Spin transport in nondegenerate semiconductors is expected to pave the way to the creation of spin transistors, spin logic devices, and reconfigurable logic circuits, because room-temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in nondegenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observe the modulation of the Hanle-type spin-precession signals, which is a characteristic spin dynamics in nondegenerate semiconductors. We obtain long spin transport of more than 20 μm and spin rotation greater than 4π at RT. We also observe gate-induced modulation of spin-transport signals at RT. The modulation of the spin diffusion length as a function of a gate voltage is successfully observed, which we attribute to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to lead to the creation of practical Si-based spin MOSFETs.

Effective dose assessment in the maxillofacial region using thermoluminescent (TLD) and metal oxide semiconductor field-effect transistor (MOSFET) dosemeters: a comparative study

PubMed Central

Schulze, D; Wolff, J; Rottke, D

2014-01-01

Objectives: The objective of this study was to compare the performance of metal oxide semiconductor field-effect transistor (MOSFET) technology dosemeters with thermoluminescent dosemeters (TLDs) (TLD 100; Thermo Fisher Scientific, Waltham, MA) in the maxillofacial area. Methods: Organ and effective dose measurements were performed using 40 TLD and 20 MOSFET dosemeters that were alternately placed in 20 different locations in 1 anthropomorphic RANDO® head phantom (the Phantom Laboratory, Salem, NY). The phantom was exposed to four different CBCT default maxillofacial protocols using small (4 × 5 cm) to full face (20 × 17 cm) fields of view (FOVs). Results: The TLD effective doses ranged between 7.0 and 158.0 µSv and the MOSFET doses between 6.1 and 175.0 µSv. The MOSFET and TLD effective doses acquired using four different (FOV) protocols were as follows: face maxillofacial (FOV 20 × 17 cm) (MOSFET, 83.4 µSv; TLD, 87.6 µSv; −5%); teeth, upper jaw (FOV, 8.5 × 5.0 cm) (MOSFET, 6.1 µSv; TLD, 7.0 µSv; −14%); tooth, mandible and left molar (FOV, 4 × 5 cm) (MOSFET, 10.3 µSv; TLD, 12.3 µSv; −16%) and teeth, both jaws (FOV, 10 × 10 cm) (MOSFET, 175 µSv; TLD, 158 µSv; +11%). The largest variation in organ and effective dose was recorded in the small FOV protocols. Conclusions: Taking into account the uncertainties of both measurement methods and the results of the statistical analysis, the effective doses acquired using MOSFET dosemeters were found to be in good agreement with those obtained using TLD dosemeters. The MOSFET dosemeters constitute a feasible alternative for TLDs for the effective dose assessment of CBCT devices in the maxillofacial region. PMID:25143020

In vivo real-time rectal wall dosimetry for prostate radiotherapy

PubMed Central

Hardcastle, Nicholas; Cutajar, Dean L.; Metcalfe, Peter E.; Lerch, Michael L. F.; Perevertaylo, Vladimir L.; Tomé, Wolfgang A.; Rosenfeld, Anatoly B.

2010-01-01

Rectal balloons are used in external beam prostate radiotherapy to provide reproducible anatomy and rectal dose reductions. This is an investigation into the combination of a MOSFET radiation detector with a rectal balloon for real time in vivo rectal wall dosimetry. The MOSFET used in the study is a radiation detector that provides a water equivalent depth of measurement of 70μm. Two MOSFETs were combined in a face-to-face orientation. The reproducibility, sensitivity and angular dependence were measured for the dual MOSFET in a 6MV photon beam. The dual MOSFET was combined with a rectal balloon and irradiated with hypothetical prostate treatments in a phantom. The anterior rectal wall dose was measured in real time and compared with the planning system calculated dose. The dual MOSFET showed angular dependence within ± 2.5% in the azimuth and +2.5%/-4% in the polar axes. When compared with an ion chamber measurement in a phantom, the dual MOSFET agreed within 2.5% for a range of radiation path lengths and incident angles. The dual MOSFET had reproducible sensitivity for fraction sizes of 2-10Gy. For the hypothetical prostate treatments the measured anterior rectal wall dose was 2.6% and 3.2% lower than the calculated dose for 3DCRT and IMRT plans. This was expected due to limitations of the dose calculation method used at the balloon cavity interface. A dual MOSFET combined with a commercial rectal balloon was shown to provide reproducible measurements of the anterior rectal wall dose in real time. The measured anterior rectal wall dose agreed with the expected dose from the treatment plan for 3DCRT and IMRT plans. The dual MOSFET could be read out in real time during the irradiation, providing capability for real time dose monitoring of the rectal wall dose during treatment. PMID:20571209

Dosimetric evaluation of a new OneDose MOSFET for Ir-192 energy.

PubMed

Kinhikar, Rajesh A; Sharma, Pramod K; Tambe, Chandrashekhar M; Deshpande, Deepak D

2006-03-07

The purpose of this study was to investigate dosimetry (reproducibility, energy correction, relative response with distance from source, linearity with threshold dose, rate of fading, temperature and angular dependence) of a newly designed OneDosetrade mark MOSFET patient dosimetry system for use in HDR brachytherapy with Ir-192 energy. All measurements were performed with a MicroSelectron HDR unit and OneDose MOSFET detectors. All dosimeters were normalized to 3 min post-irradiation to minimize fading effects. All dosimeters gave reproducible readings with mean deviation of 1.8% (SD 0.4) and 2.4% (SD 0.6) for 0 degrees and 180 degrees incidences, respectively. The mean energy correction factor was found to be 1.1 (range 1.06-1.12). Overall, there was 60% and 40% mean response of the MOSFET at 2 and 3 cm, respectively, from the source. MOSFET results showed good agreement with TLD and parallel plate ion chamber. Linear dose response with threshold voltage shift was observed with applied doses of 0.3 Gy-5 Gy with Ir-192 energy. Linearity (R2 = 1) was observed in the MOSFET signal with the applied dose range of 0.3 Gy-5 Gy with Ir-192 energy. Fading effects were less than 1% after 10 min and the MOSFET detectors stayed stable (within 5%) over a period of 1 month. The MOSFET response was found to be decreased by approximately 1.5% at 37 degrees C compared to 20 degrees C. The isotropic response of the MOSFET was found to be within +/-6%. A maximum deviation of 5.5% was obtained between 0 degrees and 180 degrees for both the axes and this should be considered in clinical applications. The small size, cable-less, instant readout, permanent storage of dose and ease of use make the MOSFET a novel dosimeter and beneficial to patients for skin dose measurements with HDRBT using an Ir-192 source compared to the labour demanding and time-consuming TLDs.

The Development of SiC MOSFET-based Switching Power Amplifiers for Fusion Science

NASA Astrophysics Data System (ADS)

Prager, James; Ziemba, Timothy; Miller, Kenneth; Picard, Julian

2015-11-01

Eagle Harbor Technologies (EHT), Inc. is developing a switching power amplifier (SPA) based on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. EHT has conducted single device testing that directly compares the capabilities of SiC MOSFETs and IGBTs to demonstrate the utility of SiC MOSFETs for fusion science applications. These devices have been built into a SPA that can drive resistive loads and resonant tank loads at 800 V, 4.25 kA at pulse repetition frequencies up to 1 MHz. During the Phase II program, EHT will finalize the design of the SPA. In Year 2, EHT will replace the SPAs used in the HIT-SI lab at the University of Washington to allow for operation over 100 kHz. SPA prototype results will be presented. This work is supported under DOE Grant # DE-SC0011907.

Lightning Pin Injection Testing on MOSFETS

NASA Technical Reports Server (NTRS)

Ely, Jay J.; Nguyen, Truong X.; Szatkowski, George N.; Koppen, Sandra V.; Mielnik, John J.; Vaughan, Roger K.; Wysocki, Philip F.; Celaya, Jose R.; Saha, Sankalita

2009-01-01

Lightning transients were pin-injected into metal-oxide-semiconductor field-effect transistors (MOSFETs) to induce fault modes. This report documents the test process and results, and provides a basis for subsequent lightning tests. MOSFETs may be present in DC-DC power supplies and electromechanical actuator circuits that may be used on board aircraft. Results show that unprotected MOSFET Gates are susceptible to failure, even when installed in systems in well-shielded and partial-shielded locations. MOSFET Drains and Sources are significantly less susceptible. Device impedance decreased (current increased) after every failure. Such a failure mode may lead to cascading failures, as the damaged MOSFET may allow excessive current to flow through other circuitry. Preliminary assessments on a MOSFET subjected to 20-stroke pin-injection testing demonstrate that Breakdown Voltage, Leakage Current and Threshold Voltage characteristics show damage, while the device continues to meet manufacturer performance specifications. The purpose of this research is to develop validated tools, technologies, and techniques for automated detection, diagnosis and prognosis that enable mitigation of adverse events during flight, such as from lightning transients; and to understand the interplay between lightning-induced surges and aging (i.e. humidity, vibration thermal stress, etc.) on component degradation.

Image guided IMRT dosimetry using anatomy specific MOSFET configurations

PubMed Central

Norrlinger, Bern; Heaton, Robert; Islam, Mohammad

2008-01-01

We have investigated the feasibility of using a set of multiple MOSFETs in conjunction with the mobileMOSFET wireless dosimetry system, to perform a comprehensive and efficient quality assurance (QA) of IMRT plans. Anatomy specific MOSFET configurations incorporating 5 MOSFETs have been developed for a specially designed IMRT dosimetry phantom. Kilovoltage cone beam computed tomography (kV CBCT) imaging was used to increase the positional precision and accuracy of the detectors and phantom, and so minimize dosimetric uncertainties in high dose gradient regions. The effectiveness of the MOSFET based dose measurements was evaluated by comparing the corresponding doses measured by an ion chamber. For 20 head and neck IMRT plans the agreement between the MOSFET and ionization chamber dose measurements was found to be within −0.26±0.88% and 0.06±1.94% (1σ) for measurement points in the high dose and low dose respectively. A precision of 1 mm in detector positioning was achieved by using the X‐Ray Volume Imaging (XVI) kV CBCT system available with the Elekta Synergy Linear Accelerator. Using the anatomy specific MOSFET configurations, simultaneous measurements were made at five strategically located points covering high dose and low dose regions. The agreement between measurements and calculated doses by the treatment planning system for head and neck and prostate IMRT plans was found to be within 0.47±2.45%. The results indicate that a cylindrical phantom incorporating multiple MOSFET detectors arranged in an anatomy specific configuration, in conjunction with image guidance, can be utilized to perform a comprehensive and efficient quality assurance of IMRT plans. PACS number: 87.55.Qr

Small field electron beam dosimetry using MOSFET detector

PubMed Central

Heaton, Robert; Norrlinger, Bern; Islam, Mohammad K.

2010-01-01

The dosimetry of very small electron fields can be challenging due to relative shifts in percent depth‐dose curves, including the location of dmax, and lack of lateral electronic equilibrium in an ion chamber when placed in the beam. Conventionally a small parallel plate chamber or film is utilized to perform small field electron beam dosimetry. Since modern radiotherapy departments are becoming filmless in favor of electronic imaging, an alternate and readily available clinical dosimeter needs to be explored. We have studied the performance of MOSFET as a relative dosimeter in small field electron beams. The reproducibility, linearity and sensitivity of a high‐sensitivity microMOSFET were investigated for clinical electron beams. In addition, the percent depth doses, output factors and profiles have been measured in a water tank with MOSFET and compared with those measured by an ion chamber for a range of field sizes from 1 cm diameter to 10 cm× 10 cm for 6, 12, 16 and 20 MeV beams. Similar comparative measurements were also performed with MOSFET and films in solid water phantom. The MOSFET sensitivity was found to be practically constant over the range of field sizes investigated. The dose response was found to be linear and reproducible (within ±1% for 100 cGy). An excellent agreement was observed among the central axis depth dose curves measured using MOSFET, film and ion chamber. The output factors measured with MOSFET for small fields agreed to within 3% with those measured by film dosimetry. Overall results indicate that MOSFET can be utilized to perform dosimetry for small field electron beam. PACS number: 87.55.Qr

Physics Based Modeling and Prognostics of Electrolytic Capacitors

NASA Technical Reports Server (NTRS)

Kulkarni, Chetan; Ceyla, Jose R.; Biswas, Gautam; Goebel, Kai

2012-01-01

This paper proposes first principles based modeling and prognostics approach for electrolytic capacitors. Electrolytic capacitors have become critical components in electronics systems in aeronautics and other domains. Degradations and faults in DC-DC converter unit propagates to the GPS and navigation subsystems and affects the overall solution. Capacitors and MOSFETs are the two major components, which cause degradations and failures in DC-DC converters. This type of capacitors are known for its low reliability and frequent breakdown on critical systems like power supplies of avionics equipment and electrical drivers of electromechanical actuators of control surfaces. Some of the more prevalent fault effects, such as a ripple voltage surge at the power supply output can cause glitches in the GPS position and velocity output, and this, in turn, if not corrected will propagate and distort the navigation solution. In this work, we study the effects of accelerated aging due to thermal stress on different sets of capacitors under different conditions. Our focus is on deriving first principles degradation models for thermal stress conditions. Data collected from simultaneous experiments are used to validate the desired models. Our overall goal is to derive accurate models of capacitor degradation, and use them to predict performance changes in DC-DC converters.

High performance multi-finger MOSFET on SOI for RF amplifiers

NASA Astrophysics Data System (ADS)

Adhikari, M. Singh; Singh, Y.

2017-10-01

In this paper, we propose structural modifications in the conventional planar metal-oxide-semiconductor field-effect transistor (MOSFET) on silicon-on-insulator by utilizing trenches in the epitaxial layer. The proposed multi-finger MOSFET (MF-MOSFET) has dual vertical-gates placed in separate trenches to form multiple channels in the p-base which carry the drain current in parallel. The proposed device uses TaN as gate electrode and SiO2 as gate dielectric. Simultaneous conduction of multiple channels enhances the drain current (ID) and provides higher transconductance (gm) leading to significant improvement in cut-off frequency (ft). Two-dimensional simulations are performed to evaluate and compare the performance of the MF-MOSFET with the conventional MOSFET. At a gate length of 60 nm, the proposed device provides 4 times higher ID, 3 times improvement in gm and 1.25 times increase in ft with better control over the short channel effects as compared with the conventional device.

First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

NASA Astrophysics Data System (ADS)

Nagura, Takuya; Kawachi, Shingo; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Kageshima, Hiroyuki; Endoh, Tetsuo; Shiraishi, Kenji

2018-04-01

It is expected that the off-state leakage current of MOSFETs can be reduced by employing vertical body channel MOSFETs (V-MOSFETs). However, in fabricating these devices, the structure of the Si pillars sometimes cannot be maintained during oxidation, since Si atoms sometimes disappear from the Si/oxide interface (Si missing). Thus, in this study, we used first-principles calculations based on the density functional theory, and investigated the Si emission behavior at the various interfaces on the basis of the Si emission model including its atomistic structure and dependence on Si crystal orientation. The results show that the order in which Si atoms are more likely to be emitted during thermal oxidation is (111) > (110) > (310) > (100). Moreover, the emission of Si atoms is enhanced as the compressive strain increases. Therefore, the emission of Si atoms occurs more easily in V-MOSFETs than in planar MOSFETs. To reduce Si missing in V-MOSFETs, oxidation processes that induce less strain, such as wet or pyrogenic oxidation, are necessary.

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

NASA Astrophysics Data System (ADS)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing BTBT leakage. With further replacement of raised InGaAs spacers by recessed, doping-graded InP spacers at high field regions, BTBT leakage can be reduced ~100:1. Using the above-mentioned techniques, record high performance InAs MOSFETs with a 2.7 nm InAs channel and a ZrO2 gate dielectric were demonstrated with Ion = 500 microA/microm at Ioff = 100 nA/microm and VDS =0.5 V, showing the highest on-state performance among all the III-V MOSFETs and comparable performance to 22 nm Si FinFETs. Record low leakage InGaAs MOSFETs with recessed InP source/drain spacers were also demonstrated with minimum I off = 60 pA/microm at 30 nm-Lg , and Ion = 150 microA/microm at I off = 1 nA/microm and VDS =0.5 V. This recessed InP source/drain spacer technique improves device scalability and enables III-V MOSFETs for low standby power logic applications. Furthermore, ultra-thin InAs channel MOSFETs were fabricated on Si substrates, exhibiting high yield and high transconductance gm ~2.0 mS/microm at 20 nm- Lg and VDS =0.5 V. With further scaling of gate lengths, a 12 nm-Lg III-V MOSFET has shown maximum Ion/Ioff ratio ~8.3x105 , confirming that III-V MOSFETs are scalable to sub-10-nm technology nodes.

In vivo dosimetry in intraoperative electron radiotherapy: microMOSFETs, radiochromic films and a general-purpose linac.

PubMed

López-Tarjuelo, Juan; Bouché-Babiloni, Ana; Morillo-Macías, Virginia; de Marco-Blancas, Noelia; Santos-Serra, Agustín; Quirós-Higueras, Juan David; Ferrer-Albiach, Carlos

2014-10-01

In vivo dosimetry is desirable for the verification, recording, and eventual correction of treatment in intraoperative electron radiotherapy (IOERT). Our aim is to share our experience of metal oxide semiconductor field-effect transistors (MOSFETs) and radiochromic films with patients undergoing IOERT using a general-purpose linac. We used MOSFETs inserted into sterile bronchus catheters and radiochromic films that were cut, digitized, and sterilized by means of gas plasma. In all, 59 measurements were taken from 27 patients involving 15 primary tumors (seven breast and eight non-breast tumors) and 12 relapses. Data were subjected to an outliers' analysis and classified according to their compatibility with the relevant doses. Associations were sought regarding the type of detector, breast and non-breast irradiation, and the radiation oncologist's assessment of the difficulty of detector placement. At the same time, 19 measurements were carried out at the tumor bed with both detectors. MOSFET measurements ([Formula: see text]  = 93.5 %, sD  =  6.5 %) were not significantly shifted from film measurements ([Formula: see text]  =  96.0 %, sD  =  5.5 %; p  =  0.109), and no associations were found (p = 0.526, p = 0.295,  and p = 0.501, respectively). As regards measurements performed at the tumor bed with both detectors, MOSFET measurements ([Formula: see text]  =  95.0 %, sD  =  5.4 % were not significantly shifted from film measurements ([Formula: see text]  =  96.4 %, sD  =  5.0 %; p  =  0.363). In vivo dosimetry can produce satisfactory results at every studied location with a general-purpose linac. Detector choice should depend on user factors, not on the detector performance itself. Surgical team collaboration is crucial to success.

Reliability Concerns for Flying SiC Power MOSFETs in Space

NASA Technical Reports Server (NTRS)

Galloway, K. F.; Witulski, A. F.; Schrimpf, R. D.; Sternberg, A. L.; Ball, D. R.; Javanainen, A.; Reed, R. A.; Sierawski, B. D.; Lauenstein, J.-M.

2018-01-01

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

Wide-Bandgap MOSFET Research with Virginia Tech Graduate Students |

Science.gov Websites

Advanced Manufacturing Research | NREL Wide Bandgap MOSFET Research with Virginia Tech Wide -Bandgap MOSFET Research with Virginia Tech Graduate Students Along with graduate student fellows from Virginia Tech, NREL is researching aspects related to the reliability and prognostics of power electronic

High voltage MOSFET switching circuit

DOEpatents

McEwan, Thomas E.

1994-01-01

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

PubMed

Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

2013-03-25

n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

CRRES microelectronic test chip orbital data. II

NASA Technical Reports Server (NTRS)

Soli, G. A.; Blaes, B. R.; Buehler, M. G.; Ray, K.; Lin, Y.-S.

1992-01-01

Data from a MOSFET matrix on two JPL (CIT Jet Propulsion Laboratory) CRRES (Combined Release and Radiation Effects Satellite) chips, each behind different amounts of shielding, are presented. Space damage factors are nearly identical to ground test values for pMOSFETs. The results from neighboring rows of MOSFETs show similar radiation degradation. The SRD (Space Radiation Dosimeter) is used to measure the total dose accumulated by the JPL chips. A parameter extraction algorithm that does not underestimate threshold voltage shifts is used. Temperature effects are removed from the MOSFET data.

Sub-1-V-60 nm vertical body channel MOSFET-based six-transistor static random access memory array with wide noise margin and excellent power delay product and its optimization with the cell ratio on static random access memory cell

NASA Astrophysics Data System (ADS)

Ogasawara, Ryosuke; Endoh, Tetsuo

2018-04-01

In this study, with the aim to achieve a wide noise margin and an excellent power delay product (PDP), a vertical body channel (BC)-MOSFET-based six-transistor (6T) static random access memory (SRAM) array is evaluated by changing the number of pillars in each part of a SRAM cell, that is, by changing the cell ratio in the SRAM cell. This 60 nm vertical BC-MOSFET-based 6T SRAM array realizes 0.84 V operation under the best PDP and up to 31% improvement of PDP compared with the 6T SRAM array based on a 90 nm planar MOSFET whose gate length and channel width are the same as those of the 60 nm vertical BC-MOSFET. Additionally, the vertical BC-MOSFET-based 6T SRAM array achieves an 8.8% wider read static noise margin (RSNM), a 16% wider write margin (WM), and an 89% smaller leakage. Moreover, it is shown that changing the cell ratio brings larger improvements of RSNM, WM, and write time in the vertical BC-MOSFET-based 6T SRAM array.

Al-implanted on-axis 4H-SiC MOSFETs

NASA Astrophysics Data System (ADS)

Florentin, M.; Cabello, M.; Rebollo, J.; Montserrat, J.; Brosselard, P.; Henry, A.; Godignon, P.

2017-03-01

In this paper, the impact of temperature and time stress on gate oxide stability of several multi-implanted and epitaxied 4H-SiC nMOSFET is presented. The oxide layer was processed under a rapid thermal process (RTP) furnace. The variation of the main electrical parameters is shown. We report the high quality and stability of such implanted MOSFETs, and point out the very low roughness effect of the on-axis-cut sample. Particularly, in the best case, effective channel mobility (μ fe) overcomes 20 cm2.V-1.s-1 at 300 °C for a channel length of 12 μm, which is very encouraging for implantation technology. Starting from 200 °C, the apparent increase of the μ fe peak of the MOSFET ceases and tends to saturate with further temperature increase. This is an indication of the potential of MOSFETs built on on-axis substrates. Thus, starting from the real case of an implanted MOSFET, the global purpose is to show that the electrical performance of such an on-axis-built device can tend to reach that of the ideal case, i.e. epitaxied MOSFET, and even overcome its electrical limitation, e.g. in terms of threshold voltage stability at high temperature.

Real-time in vivo dosimetry with MOSFET detectors in serial tomotherapy for head and neck cancer patients.

PubMed

Qi, Zhen-Yu; Deng, Xiao-Wu; Huang, Shao-Min; Shiu, Almon; Lerch, Michael; Metcalfe, Peter; Rosenfeld, Anatoly; Kron, Tomas

2011-08-01

A real-time dose verification method using a recently designed metal oxide semiconductor field effect transistor (MOSFET) dosimetry system was evaluated for quality assurance (QA) of intensity-modulated radiation therapy (IMRT). Following the investigation of key parameters that might affect the accuracy of MOSFET measurements (i.e., source surface distance [SSD], field size, beam incident angles and radiation energy spectrum), the feasibility of this detector in IMRT dose verification was demonstrated by comparison with ion chamber measurements taken in an IMRT QA phantom. Real-time in vivo measurements were also performed with the MOSFET system during serial tomotherapy treatments administered to 8 head and neck cancer patients. MOSFET sensitivity did not change with SSD. For field sizes smaller than 20 × 20 cm(2), MOFET sensitivity varied within 1.0%. The detector angular response was isotropic within 2% over 360°, and the observed sensitivity variation due to changes in the energy spectrum was negligible in 6-MV photons. MOSFET system measurements and ion chamber measurements agreed at all points in IMRT phantom plan verification, within 5%. The mean difference between 48 IMRT MOSFET-measured doses and calculated values in 8 patients was 3.33% and ranged from -2.20% to 7.89%. More than 90% of the total measurements had deviations of less than 5% from the planned doses. The MOSFET dosimetry system has been proven to be an effective tool in evaluating the actual dose within individual patients during IMRT treatment. Copyright © 2011 Elsevier Inc. All rights reserved.

High voltage MOSFET switching circuit

DOEpatents

McEwan, T.E.

1994-07-26

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

Power Conditioning for MEMS-Based Waste Vibrational Energy Harvester

DTIC Science & Technology

2015-06-01

circuits ...........................................................................................18 Figure 18. Full-wave passive MOSFET rectifier...ABBREVIATIONS AC Alternative Current AlN Aluminum Nitride DC Direct Current LIA Lock-In Amplifier MEMS Microelectromechanical Systems MOSFET ...efficiency is achieved when input voltage is over 2–3 V [14]. Using metal-oxide-semiconductor field-effect transistors ( MOSFETs ) in a rectifier instead of

Submicron Silicon MOSFET

NASA Technical Reports Server (NTRS)

Daud, T.

1986-01-01

Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.

Silicon Carbide (SiC) MOSFET-based Full-Bridge for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Picard, Julian; Hashim, Akel

2014-10-01

Switching power amplifiers (SPAs) have a wide variety of applications within the fusion science community, including feedback and control systems for dynamic plasma stabilization in tokamaks, inductive and arc plasma sources, Radio Frequency (RF) helicity and flux injection, RF plasma heating and current drive schemes, ion beam generation, and RF pre-ionizer systems. SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. Eagle Harbor Technologies (EHT) is designing, constructing, and testing a SiC MOSFET-based full-bridge SPA. EHT will leverage the proprietary gate drive technology previously developed with the support of a DOE SBIR, which will enable fast, efficient switching in a small form factor. The primary goal is to develop a SiC MOSFET-based SPA for fusion science applications. Work supported in part by the DOE under Contract Number DE-SC0011907.

Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip

NASA Astrophysics Data System (ADS)

Nakane, R.; Shuto, Y.; Sukegawa, H.; Wen, Z. C.; Yamamoto, S.; Mitani, S.; Tanaka, M.; Inomata, K.; Sugahara, S.

2014-12-01

We demonstrate monolithic integration of pseudo-spin-MOSFETs (PS-MOSFETs) using vendor-made MOSFETs fabricated in a low-cost multi-project wafer (MPW) product and lab-made magnetic tunnel junctions (MTJs) formed on the topmost passivation film of the MPW chip. The tunneling magnetoresistance (TMR) ratio of the fabricated MTJs strongly depends on the surface roughness of the passivation film. Nevertheless, after the chip surface was atomically flattened by SiO2 deposition on it and successive chemical-mechanical polish (CMP) process for the surface, the fabricated MTJs on the chip exhibits a sufficiently large TMR ratio (>140%) adaptable to the PS-MOSFET application. The implemented PS-MOSFETs show clear modulation of the output current controlled by the magnetization configuration of the MTJs, and a maximum magnetocurrent ratio of 90% is achieved. These magnetocurrent behaviour is quantitatively consistent with those predicted by HSPICE simulations. The developed integration technique using a MPW CMOS chip would also be applied to monolithic integration of CMOS devices/circuits and other various functional devices/materials, which would open the door for exploring CMOS-based new functional hybrid circuits.

Development of a pMOSFET sensor with a Gd converter for low energy neutron dosimetry.

PubMed

Lee, N H; Kim, S H; Youk, G U; Park, I J; Kim, Y M

2004-01-01

A pMOSFET having a 10 microm thick Gadolinium (Gd) layer has been invented as a slow neutron sensor. When slow neutrons are incident to the Gd layer, conversion electrons, which generate electron-hole pairs in the SiO2 layer of the pMOSFET, are generated by a neutron capture process. The holes are easily trapped in the oxide and act as positive-charge centres in the oxide. Due to the induced charges, the threshold turn-on voltage of the pMOSFET is changed. The developed sensors were tested at a neutron beam port of the HANARO research reactor and a 60Co irradiation facility to investigate slow neutron response and gamma ray contamination, respectively. The resultant voltage change was proportional to the accumulated neutron dose and it was very sensitive to slow neutrons. Moreover, ionising radiation contamination was negligible. It can also be used in a mixed radiation field by subtracting the voltage change of a pMOSFET without Gd from that of the Gd-pMOSFET.

JMOSFET: A MOSFET parameter extractor with geometry-dependent terms

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Moore, B. T.

1985-01-01

The parameters from metal-oxide-silicon field-effect transistors (MOSFETs) that are included on the Combined Release and Radiation Effects Satellite (CRRES) test chips need to be extracted to have a simple but comprehensive method that can be used in wafer acceptance, and to have a method that is sufficiently accurate that it can be used in integrated circuits. A set of MOSFET parameter extraction procedures that are directly linked to the MOSFET model equations and that facilitate the use of simple, direct curve-fitting techniques are developed. In addition, the major physical effects that affect MOSFET operation in the linear and saturation regions of operation for devices fabricated in 1.2 to 3.0 mm CMOS technology are included. The fitting procedures were designed to establish single values for such parameters as threshold voltage and transconductance and to provide for slope matching between the linear and saturation regions of the MOSFET output current-voltage curves. Four different sizes of transistors that cover a rectangular-shaped region of the channel length-width plane are analyzed.

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

NASA Astrophysics Data System (ADS)

Kobayashi, Kenya; Sudo, Masaki; Omura, Ichiro

2018-04-01

Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate–drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C oss), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C oss curves as three divided components. Output charge (Q oss) and stored energy (E oss) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q oss loss increased depending on switching frequency. This analysis reveals that Q oss may become a significant issue in next-generation high-efficiency FP-MOSFETs.

Performance analysis of SiGe double-gate N-MOSFET

NASA Astrophysics Data System (ADS)

Singh, A.; Kapoor, D.; Sharma, R.

2017-04-01

The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate (SG) MOSFETs but also provides the better replacement for future technology. In this paper, the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET. Furthermore, in this paper the electrical characteristics of Si double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET. The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool. Moreover, we have designed its structure and studied both {I}{{d}}{-}{V}{{g}} characteristics for different voltages namely 0.05, 0.1, 0.5, 0.8, 1 and 1.5 V and {I}{{d}}{-}{V}{{d}} characteristics for different voltages namely 0.1, 0.5, 1 and 1.5 V at work functions 4.5, 4.6 and 4.8 eV for this structure. The performance parameters investigated in this paper are threshold voltage, DIBL, subthreshold slope, GIDL, volume inversion and MMCR.

Power MOSFET Thermal Instability Operation Characterization Support

NASA Technical Reports Server (NTRS)

Shue, John L.; Leidecker, Henning

2010-01-01

Metal-oxide semiconductor field-effect transistors (MOSFETs) are used extensively in flight hardware and ground support equipment. In the quest for faster switching times and lower "on resistance," the MOSFETs designed from 1998 to the present have achieved most of their intended goals. In the quest for lower on resistance and higher switching speeds, the designs now being produced allow the charge-carrier dominated region (once small and outside of the area of concern) to become important and inside the safe operating area (SOA). The charge-carrier dominated region allows more current to flow as the temperature increases. The higher temperatures produce more current resulting in the beginning of thermal runaway. Thermal runaway is a problem affecting a wide range of modern MOSFETs from more than one manufacturer. This report contains information on MOSFET failures, their causes and test results and information dissemination.

MOSFET dosimetry in-vivo at superficial and orthovoltage x-ray energies.

PubMed

Cheung, T; Butson, M J; Yu, P K N

2003-06-01

This note investigates in-vivo dosimetry using a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for radiotherapy treatment at superficial and orthovoltage x-ray energies. This was performed within one fraction of the patients treatment. Standard measurements along with energy response of the detector are given. Results showed that the MOSFET measurements in-vivo agreed with calculated results on average within +/- 5.6% over all superficial and orthovoltage energies. These variations were slightly larger than TLD results with variations between measured and calculated results being +/- 5.0% for the same patient measurements. The MOSFET device provides adequate in-vivo dosimetry for superficial and orthovoltage energy treatments with the accuracy of the measurements seeming to be relatively on par with TLD in our case. The MOSFET does have the advantage of returning a relatively immediate dosimetric result after irradiation.

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Nakatani, Katsutoshi; Kawai, Hiroji; Ao, Jin-Ping; Ohno, Yasuo

To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2 × 1017cm-3, p-type, which is well consistent with the Mg concentration obtained from secondary ion mass spectroscopy (SIMS) measurement.

SU-E-T-145: Effects of Temporary Tachytherapy Inhibition Magnet On MOSFET Dose Measurements of Cardiovascular Implantable Electronic Devices (CIED) in Radiation Therapy Patients

DOE Office of Scientific and Technical Information (OSTI.GOV)

P, Joshi; Salomons, G; Kerr, A

2014-06-01

Purpose: To determine the effects of temporary tachytherapy inhibition magnet on MOSFET dose measurements of cardiovascular implantable electronic devices (CIED) in radiation therapy patients. Methods: Infield and peripheral MOSFET dose measurements with 6MV photon beams were performed to evaluate dose to a CIED in the presence of a doughnut shaped temporary tachytherapy inhibition magnet. Infield measurements were done to quantify the effects of the magnetic field alone and shielding by the magnet. MOSFETs were placed inside a 20×20cm{sup 2} field at a depth of 3cm in the isocentre plane in the presence and absence of the magnet. Peripheral dose measurementsmore » were done to determine the impact of the magnet on dose to the CIED in a clinical setting. These measurements were performed at the centre, under the rim and half way between a 10×10cm{sup 2} field edge and the magnet with MOSFETS placed at the surface, 0.5cm and 1cm depths in the presence and absence of the magnet. Results: Infield measurements showed that effects of magnetic field on the MOSFET readings were within the 2% MOSFET dose measurement uncertainty; a 20% attenuation of dose under the magnet rim was observed. Peripheral dose measurements at the centre of the magnet show an 8% increase in surface dose and a 6% decrease in dose at 1cm depth. Dose under the magnet rim was reduced by approximately 68%, 45% and 25% for MOSFET placed at 0.0, 0.5 and 1.0cm bolus depths, respectively. Conclusions: The magnetic field has an insignificant effect on MOSFET dose measurements. Dose to the central region of CIED represented by centre of the magnet doughnut increases at the surface, and decreases at depths due to low energy scattering contributions from the magnet. Dose under the magnet rim, representing CIED edges, decreased significantly due to shielding.« less

Study of proton radiation effects among diamond and rectangular gate MOSFET layouts

NASA Astrophysics Data System (ADS)

Seixas, L. E., Jr.; Finco, S.; Silveira, M. A. G.; Medina, N. H.; Gimenez, S. P.

2017-01-01

This paper describes an experimental comparative study of proton ionizing radiation effects between the metal-oxide-semiconductor (MOS) Field Effect Transistors (MOSFETs) implemented with hexagonal gate shapes (diamond) and their respective counterparts designed with the classical rectangular ones, regarding the same gate areas, channel widths and geometrical ratios (W/L). The devices were manufactured by using the 350 nm bulk complementary MOS (CMOS) integrated circuits technology. The diamond MOSFET with α angles higher or equal to 90° tends to present a smaller vulnerability to the high doses ionizing radiation than those observed in the typical rectangular MOSFET counterparts.

Study on Frequency Dependency of ON-Resistance and Pulse-Loss Calculation of MOSFETs for Switch Mode Power Supply

NASA Astrophysics Data System (ADS)

Yamamura, Hideho; Sato, Ryohei; Iwata, Yoshiharu

Global efforts toward energy conservation, increasing data centers, and the increasing use of IT equipments are leading to a demand in reduced power consumption of equipments, and power efficiency improvement of power supply units is becoming a necessity. MOSFETs are widely used for their low ON-resistances. Power efficiency is designed using time-domain circuit simulators, except for transformer copper-loss, which has frequency dependency which is calculated separately using methods based on skin and proximity effects. As semiconductor technology reduces the ON-resistance of MOSFETs, frequency dependency due to the skin effect or proximity effect is anticipated. In this study, ON-resistance of MOSFETs are measured and frequency dependency is confirmed. Power loss against rectangular current pulse is calculated. The calculation method for transformer copper-loss is expanded to MOSFETs. A frequency function for the resistance model is newly developed and parametric calculation is enabled. Acceleration of calculation is enabled by eliminating summation terms. Using this method, it is shown that the frequency dependent component of the measured MOSFETs increases the dissipation from 11% to 32% at a switching frequency of 100kHz. From above, this paper points out the importance of the frequency dependency of MOSFETs' ON-resistance, provides means of calculating its pulse losses, and improves loss calculation accuracy of SMPSs.

Proton dose distribution measurements using a MOSFET detector with a simple dose-weighted correction method for LET effects.

PubMed

Kohno, Ryosuke; Hotta, Kenji; Matsuura, Taeko; Matsubara, Kana; Nishioka, Shie; Nishio, Teiji; Kawashima, Mitsuhiko; Ogino, Takashi

2011-04-04

We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth-dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high-bias voltages. In order to accurately measure dose distributions, we developed a practical method for correcting the MOSFET response to proton beams. The detector was tested by examining lateral dose profiles formed by protons passing through an L-shaped bolus. The dose reproducibility, angular dependence and depth-dose response were evaluated using a 190 MeV proton beam. Depth-output curves produced using the MOSFET detectors were compared with results obtained using an ionization chamber (IC). Since accurate measurements of proton dose distribution require correction for LET effects, we developed a simple dose-weighted correction method. The correction factors were determined as a function of proton penetration depth, or residual range. The residual proton range at each measurement point was calculated using the pencil beam algorithm. Lateral measurements in a phantom were obtained for pristine and SOBP beams. The reproducibility of the MOSFET detector was within 2%, and the angular dependence was less than 9%. The detector exhibited a good response at the Bragg peak (0.74 relative to the IC detector). For dose distributions resulting from protons passing through an L-shaped bolus, the corrected MOSFET dose agreed well with the IC results. Absolute proton dosimetry can be performed using MOSFET detectors to a precision of about 3% (1 sigma). A thinner oxide layer thickness improved the LET in proton dosimetry. By employing correction methods for LET dependence, it is possible to measure absolute proton dose using MOSFET detectors.

Proton dose distribution measurements using a MOSFET detector with a simple dose‐weighted correction method for LET effects

PubMed Central

Hotta, Kenji; Matsuura, Taeko; Matsubara, Kana; Nishioka, Shie; Nishio, Teiji; Kawashima, Mitsuhiko; Ogino, Takashi

2011-01-01

We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth‐dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high‐bias voltages. In order to accurately measure dose distributions, we developed a practical method for correcting the MOSFET response to proton beams. The detector was tested by examining lateral dose profiles formed by protons passing through an L‐shaped bolus. The dose reproducibility, angular dependence and depth‐dose response were evaluated using a 190 MeV proton beam. Depth‐output curves produced using the MOSFET detectors were compared with results obtained using an ionization chamber (IC). Since accurate measurements of proton dose distribution require correction for LET effects, we developed a simple dose‐weighted correction method. The correction factors were determined as a function of proton penetration depth, or residual range. The residual proton range at each measurement point was calculated using the pencil beam algorithm. Lateral measurements in a phantom were obtained for pristine and SOBP beams. The reproducibility of the MOSFET detector was within 2%, and the angular dependence was less than 9%. The detector exhibited a good response at the Bragg peak (0.74 relative to the IC detector). For dose distributions resulting from protons passing through an L‐shaped bolus, the corrected MOSFET dose agreed well with the IC results. Absolute proton dosimetry can be performed using MOSFET detectors to a precision of about 3% (1 sigma). A thinner oxide layer thickness improved the LET in proton dosimetry. By employing correction methods for LET dependence, it is possible to measure absolute proton dose using MOSFET detectors. PACS number: 87.56.‐v

Experience of using MOSFET detectors for dose verification measurements in an end-to-end 192Ir brachytherapy quality assurance system.

PubMed

Persson, Maria; Nilsson, Josef; Carlsson Tedgren, Åsa

Establishment of an end-to-end system for the brachytherapy (BT) dosimetric chain could be valuable in clinical quality assurance. Here, the development of such a system using MOSFET (metal oxide semiconductor field effect transistor) detectors and experience gained during 2 years of use are reported with focus on the performance of the MOSFET detectors. A bolus phantom was constructed with two implants, mimicking prostate and head & neck treatments, using steel needles and plastic catheters to guide the 192 Ir source and house the MOSFET detectors. The phantom was taken through the BT treatment chain from image acquisition to dose evaluation. During the 2-year evaluation-period, delivered doses were verified a total of 56 times using MOSFET detectors which had been calibrated in an external 60 Co beam. An initial experimental investigation on beam quality differences between 192 Ir and 60 Co is reported. The standard deviation in repeated MOSFET measurements was below 3% in the six measurement points with dose levels above 2 Gy. MOSFET measurements overestimated treatment planning system doses by 2-7%. Distance-dependent experimental beam quality correction factors derived in a phantom of similar size as that used for end-to-end tests applied on a time-resolved measurement improved the agreement. MOSFET detectors provide values stable over time and function well for use as detectors for end-to-end quality assurance purposes in 192 Ir BT. Beam quality correction factors should address not only distance from source but also phantom dimensions. Copyright © 2017 American Brachytherapy Society. Published by Elsevier Inc. All rights reserved.

Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage

NASA Astrophysics Data System (ADS)

Namai, Masaki; An, Junjie; Yano, Hiroshi; Iwamuro, Noriyuki

2018-07-01

In this study, the experimental evaluation and numerical analysis of short-circuit mechanisms of 1200 V SiC planar and trench MOSFETs were conducted at various DC bus voltages from 400 to 800 V. Investigation of the impact of DC bus voltage on short-circuit capability yielded results that are extremely useful for many existing power electronics applications. Three failure mechanisms were identified in this study: thermal runaway, MOS channel current following device turn-off, and rupture of the gate oxide layer (gate oxide layer damage). The SiC MOSFETs experienced lattice temperatures exceeding 1000 K during the short-circuit transient; as Si insulated gate bipolar transistors (IGBTs) are not typically subject to such temperatures, the MOSFETs experienced distinct failure modes, and the mode experienced was significantly influenced by the DC bus voltage. In conclusion, suggestions regarding the SiC MOSFET design and operation methods that would enhance device robustness are proposed.

Design, production, and testing of field effect transistors. [cryogenic MOSFETS

NASA Technical Reports Server (NTRS)

Sclar, N.

1982-01-01

Cryogenic MOSFETS (CRYOFETS), specifically designed for low temperature preamplifier application with infrared extrinsic detectors were produced and comparatively tested with p-channel MOSFETs under matched conditions. The CRYOFETs exhibit lower voltage thresholds, high source-follower gains at lower bias voltage, and lower dc offset source voltage. The noise of the CRYOFET is found to be 2 to 4 times greater than the MOSFET with a correspondingly lower figure of merit (which is established for source-follower amplifiers). The device power dissipation at a gain of 0.98 is some two orders of magnitude lower than for the MOSFET. Further, CRYOFETs are free of low temperature I vs V character hysteresis and balky conduction turn-on effects and operate effectively in the 2.4 to 20 K range. These devices have promise for use on long term duration sensor missions and for on-focal-plane signal processing at low temperatures.

Evaluation of the usefulness of a MOSFET detector in an anthropomorphic phantom for 6-MV photon beam.

PubMed

Kohno, Ryosuke; Hirano, Eriko; Kitou, Satoshi; Goka, Tomonori; Matsubara, Kana; Kameoka, Satoru; Matsuura, Taeko; Ariji, Takaki; Nishio, Teiji; Kawashima, Mitsuhiko; Ogino, Takashi

2010-07-01

In order to evaluate the usefulness of a metal oxide-silicon field-effect transistor (MOSFET) detector as a in vivo dosimeter, we performed in vivo dosimetry using the MOSFET detector with an anthropomorphic phantom. We used the RANDO phantom as an anthropomorphic phantom, and dose measurements were carried out in the abdominal, thoracic, and head and neck regions for simple square field sizes of 10 x 10, 5 x 5, and 3 x 3 cm(2) with a 6-MV photon beam. The dose measured by the MOSFET detector was verified by the dose calculations of the superposition (SP) algorithm in the XiO radiotherapy treatment-planning system. In most cases, the measured doses agreed with the results of the SP algorithm within +/-3%. Our results demonstrated the utility of the MOSFET detector for in vivo dosimetry even in the presence of clinical tissue inhomogeneities.

p-MOSFET total dose dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G. (Inventor); Blaes, Brent R. (Inventor)

1994-01-01

A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.

Performance analysis of SOI MOSFET with rectangular recessed channel

NASA Astrophysics Data System (ADS)

Singh, M.; Mishra, S.; Mohanty, S. S.; Mishra, G. P.

2016-03-01

In this paper a two dimensional (2D) rectangular recessed channel-silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed.

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Design of high-voltage, high-power, solid state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.

Design of high-voltage, high-power, solid state remote power controllers for aerospace applications

NASA Astrophysics Data System (ADS)

Sturman, J. C.

1985-05-01

Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.

Effect of the mobility on (I-V) characteristics of the MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benzaoui, Ouassila, E-mail: o-benzaoui@yahoo.fr; Azizi, Cherifa, E-mail: aziziche@yahoo.fr

2013-12-16

MOSFET Transistor was the subject of many studies and research works (electronics, data-processing, telecommunications...) in order to exploit its interesting and promising characteristics. The aim of this contribution is devoted to the effect of the mobility on the static characteristics I-V of the MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program. The influence of mobility was studied. Obtained results allow us to determine the mobility law in the MOSFET which gives optimal (I-V) characteristics of the component.

Calculating Second-Order Effects in MOSFET's

NASA Technical Reports Server (NTRS)

Benumof, Reuben; Zoutendyk, John A.; Coss, James R.

1990-01-01

Collection of mathematical models includes second-order effects in n-channel, enhancement-mode, metal-oxide-semiconductor field-effect transistors (MOSFET's). When dimensions of circuit elements relatively large, effects neglected safely. However, as very-large-scale integration of microelectronic circuits leads to MOSFET's shorter or narrower than 2 micrometer, effects become significant in design and operation. Such computer programs as widely-used "Simulation Program With Integrated Circuit Emphasis, Version 2" (SPICE 2) include many of these effects. In second-order models of n-channel, enhancement-mode MOSFET, first-order gate-depletion region diminished by triangular-cross-section deletions on end and augmented by circular-wedge-cross-section bulges on sides.

Measurement of the spin structure function GD1 of the deuteron and its moments at low Q2

NASA Astrophysics Data System (ADS)

Athmakur, Abhiram Goud

This thesis focuses on energy considerations in the MOSFET when we supply a bias to it. We also notice that the length of the MOSFET gets smaller and smaller then for a small release or exchange of energy that may take place in a MOS transistor which can cause a change in the temperature. We have investigated that there is a change in the temperature of the MOSFET when we supply bias to it as we keep reducing the length of the channel. The change in the temperature of the MOSFET is calculated theoretically.

SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs

NASA Astrophysics Data System (ADS)

Tang, Zhaohuan; Fu, Xinghua; Yang, Fashun; Tan, Kaizhou; Ma, Kui; Wu, Xue; Lin, Jiexing

2017-12-01

Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture (SEGR) and single event burnout (SEB), which will degrade the running safety and reliability of spacecraft, are the two typical failure modes in power MOSFETs. In this paper, based on recombination mechanism of interface between oxide and silicon, a novel hardened power MOSFETs structure for SEGR and SEB is proposed. The structure comprises double stagger partial silicon-on-insulator (DSPSOI) layers. Results show that the safety operation area (SOA) of a 130 V N-channel power MOSFET in single event irradiation environment is enhanced by up to 50% when the linear-energy-transfer value of heavy ion is a constant of 98 MeV·cm2/mg in the whole incident track, and the other parameters are almost maintained at the same value. Thus this novel structure can be widely used in designing single event irradiation-hardened power MOSFETs. Project supported by the National Natural Science Foundation of China (No. 61464002), the Grand Science and Technology Special Project in Guizhou Province of China (No. [2015]6006), and the Ministry of Education Open Foundation for Semiconductor Power Device Reliability (No. 010201).

Estimation of computed tomography dose index in cone beam computed tomography: MOSFET measurements and Monte Carlo simulations.

PubMed

Kim, Sangroh; Yoshizumi, Terry; Toncheva, Greta; Yoo, Sua; Yin, Fang-Fang; Frush, Donald

2010-05-01

To address the lack of accurate dose estimation method in cone beam computed tomography (CBCT), we performed point dose metal oxide semiconductor field-effect transistor (MOSFET) measurements and Monte Carlo (MC) simulations. A Varian On-Board Imager (OBI) was employed to measure point doses in the polymethyl methacrylate (PMMA) CT phantoms with MOSFETs for standard and low dose modes. A MC model of the OBI x-ray tube was developed using BEAMnrc/EGSnrc MC system and validated by the half value layer, x-ray spectrum and lateral and depth dose profiles. We compared the weighted computed tomography dose index (CTDIw) between MOSFET measurements and MC simulations. The CTDIw was found to be 8.39 cGy for the head scan and 4.58 cGy for the body scan from the MOSFET measurements in standard dose mode, and 1.89 cGy for the head and 1.11 cGy for the body in low dose mode, respectively. The CTDIw from MC compared well to the MOSFET measurements within 5% differences. In conclusion, a MC model for Varian CBCT has been established and this approach may be easily extended from the CBCT geometry to multi-detector CT geometry.

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

NASA Technical Reports Server (NTRS)

Scheick, Leif

2014-01-01

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Application of MOSFET detectors for dosimetry in small animal radiography using short exposure times.

PubMed

De Lin, Ming; Toncheva, Greta; Nguyen, Giao; Kim, Sangroh; Anderson-Evans, Colin; Johnson, G Allan; Yoshizumi, Terry T

2008-08-01

Digital subtraction angiography (DSA) X-ray imaging for small animals can be used for functional phenotyping given its ability to capture rapid physiological changes at high spatial and temporal resolution. The higher temporal and spatial requirements for small-animal imaging drive the need for short, high-flux X-ray pulses. However, high doses of ionizing radiation can affect the physiology. The purpose of this study was to verify and apply metal oxide semiconductor field effect transistor (MOSFET) technology to dosimetry for small-animal diagnostic imaging. A tungsten anode X-ray source was used to expose a tissue-equivalent mouse phantom. Dose measurements were made on the phantom surface and interior. The MOSFETs were verified with thermoluminescence dosimeters (TLDs). Bland-Altman analysis showed that the MOSFET results agreed with the TLD results (bias, 0.0625). Using typical small animal DSA scan parameters, the dose ranged from 0.7 to 2.2 cGy. Application of the MOSFETs in the small animal environment provided two main benefits: (1) the availability of results in near real-time instead of the hours needed for TLD processes and (2) the ability to support multiple exposures with different X-ray techniques (various of kVp, mA and ms) using the same MOSFET. This MOSFET technology has proven to be a fast, reliable small animal dosimetry method for DSA imaging and is a good system for dose monitoring for serial and gene expression studies.

Application of MOSFET Detectors for Dosimetry in Small Animal Radiography Using Short Exposure Times

PubMed Central

De Lin, Ming; Toncheva, Greta; Nguyen, Giao; Kim, Sangroh; Anderson-Evans, Colin; Johnson, G. Allan; Yoshizumi, Terry T.

2008-01-01

Digital subtraction angiography (DSA) X-ray imaging for small animals can be used for functional phenotyping given its ability to capture rapid physiological changes at high spatial and temporal resolution. The higher temporal and spatial requirements for small-animal imaging drive the need for short, high-flux X-ray pulses. However, high doses of ionizing radiation can affect the physiology. The purpose of this study was to verify and apply metal oxide semiconductor field effect transistor (MOSFET) technology to dosimetry for small-animal diagnostic imaging. A tungsten anode X-ray source was used to expose a tissue-equivalent mouse phantom. Dose measurements were made on the phantom surface and interior. The MOSFETs were verified with thermoluminescence dosimeters (TLDs). Bland-Altman analysis showed that the MOSFET results agreed with the TLD results (bias, 0.0625). Using typical small animal DSA scan parameters, the dose ranged from 0.7 to 2.2 cGy. Application of the MOSFETs in the small animal environment provided two main benefits: (1) the availability of results in near real-time instead of the hours needed for TLD processes and (2) the ability to support multiple exposures with different X-ray techniques (various of kVp, mA and ms) using the same MOSFET. This MOSFET technology has proven to be a fast, reliable small animal dosimetry method for DSA imaging and is a good system for dose monitoring for serial and gene expression studies. PMID:18666818

Dose verification to cochlea during gamma knife radiosurgery of acoustic schwannoma using MOSFET dosimeter.

PubMed

Sharma, Sunil D; Kumar, Rajesh; Akhilesh, Philomina; Pendse, Anil M; Deshpande, Sudesh; Misra, Basant K

2012-01-01

Dose verification to cochlea using metal oxide semiconductor field effect transistor (MOSFET) dosimeter using a specially designed multi slice head and neck phantom during the treatment of acoustic schwannoma by Gamma Knife radiosurgery unit. A multi slice polystyrene head phantom was designed and fabricated for measurement of dose to cochlea during the treatment of the acoustic schwannoma. The phantom has provision to position the MOSFET dosimeters at the desired location precisely. MOSFET dosimeters of 0.2 mm x 0.2 mm x 0.5 μm were used to measure the dose to the cochlea. CT scans of the phantom with MOSFETs in situ were taken along with Leksell frame. The treatment plans of five patients treated earlier for acoustic schwannoma were transferred to the phantom. Dose and coordinates of maximum dose point inside the cochlea were derived. The phantom along with the MOSFET dosimeters was irradiated to deliver the planned treatment and dose received by cochlea were measured. The treatment planning system (TPS) estimated and measured dose to the cochlea were in the range of 7.4 - 8.4 Gy and 7.1 - 8 Gy, respectively. The maximum variation between TPS calculated and measured dose to cochlea was 5%. The measured dose values were found in good agreement with the dose values calculated using the TPS. The MOSFET dosimeter can be a suitable choice for routine dose verification in the Gamma Knife radiosurgery.

Engineering Nanowire n-MOSFETs at L_{g}<8 nm

NASA Astrophysics Data System (ADS)

Mehrotra, Saumitra R.; Kim, SungGeun; Kubis, Tillmann; Povolotskyi, Michael; Lundstrom, Mark S.; Klimeck, Gerhard

2013-07-01

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs.

88 kilowatt automotive inverter with new 900 Volt silicon carbide MOSFET technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Casady, Jeffrey; Olejniczak, Kraig; McNutt, Ty

This final report is on the design and experimental verification of a 200 kVA traction inverter using three 900 V, 2.5 mΩ, SiC MOSFET-based half-bridge power modules comprising the power stage. Each dual power module contains four 900 V, 10 mΩ SiC MOSFETs per switch position and uses synchronous conduction to achieve high average and peak efficiencies over its entire operating region to meet the demands of hybrid, plug-in hybrid, and extended-range electrified vehicle architectures. Significant performance improvement, via conduction, switching, and reverse-recovery loss metrics, from this SiC MOSFET-based inverter—especially at light load conditions—will be discussed.

Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds

NASA Astrophysics Data System (ADS)

Graziosi, Patrizio; Neophytou, Neophytos

2018-02-01

Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical top-of-the-barrier FET model, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts. Such a device could retain the spin polarization of injected electrons in the channel, the loss of which limits the operation of traditional spin transistors with non-ferromagnetic channels. We examine the operation of four material systems that are currently considered some of the most prominent known ferromagnetic semiconductors: three Heusler-type alloys (Mn2CoAl, CrVZrAl, and CoVZrAl) and one from the oxide family (NiFe2O4). We describe their band structures by using data from DFT (Density Functional Theory) calculations. We investigate under which conditions high spin polarization and significant ION/IOFF ratio, two essential requirements for the spin-MOSFET operation, are both achieved. We show that these particular Heusler channels, in their bulk form, do not have adequate bandgap to provide high ION/IOFF ratios and have small magnetoconductance compared to state-of-the-art devices. However, with confinement into ultra-narrow sizes down to a few nanometers, and by engineering their spin dependent contact resistances, they could prove promising channel materials for the realization of spin-MOSFET transistor devices that offer combined logic and memory functionalities. Although the main compounds of interest in this paper are Mn2CoAl, CrVZrAl, CoVZrAl, and NiFe2O4 alone, we expect that the insight we provide is relevant to other classes of such materials as well.

Adaptive Circuits for the 0.5-V Nanoscale CMOS Era

NASA Astrophysics Data System (ADS)

Itoh, Kiyoo; Yamaoka, Masanao; Oshima, Takashi

The minimum operating voltage, Vmin, of nanoscale CMOS LSIs is investigated to breach the 1-V wall that we are facing in the 65-nm device generation, and open the door to the below 0.5-V era. A new method using speed variation is proposed to evaluate Vmin. It shows that Vmin is very sensitive to the lowest necessary threshold voltage, Vt0, of MOSFETs and to threshold-voltage variations, ΔVt, which become more significant with device scaling. There is thus a need for low-Vt0 circuits and ΔVt-immune MOSFETs to reduce Vmin. For memory-rich LSIs, the SRAM block is particularly problematic because it has the highest Vmin. Various techniques are thus proposed to reduce the Vmin: using RAM repair, shortening the data line, up-sizing, and using more relaxed MOSFET scaling. To effectively reduce Vmin of other circuit blocks, dual-Vt0 and dual-VDD circuits using gate-source reverse biasing, temporary activation, and series connection of another small low-Vt0 MOSFET are proposed. They are dynamic logic circuits enabling the power-delay product of the conventional static CMOS inverter to be reduced to 0.09 at a 0.2-V supply, and a DRAM dynamic sense amplifier and power switches operable at below 0.5V. In addition, a fully-depleted structure (FD-SOI) and fin-type structure (FinFET) for Vt-immune MOSFETs are discussed in terms of their low-voltage potential and challenges. As a result, the height up-scalable FinFETs turns out to be quite effective to reduce Vmin to less than 0.5V, if combined with the low-Vt0 circuits. For mixed-signal LSIs, investigation of low-voltage potential of analog circuits, especially for comparators and operational amplifiers, reveals that simple inverter op-amps, in which the low gain and nonlinearity are compensated for by digitally assisted analog designs, are crucial to 0.5-V operations. Finally, it is emphasized that the development of relevant devices and fabrication processes is the key to the achievement of 0.5-V nanoscale LSIs.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

PubMed

Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

2012-08-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure

PubMed Central

2012-01-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal–semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials. PMID:22853458

Quantum Mechanical Modeling of Ballistic MOSFETs

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan (Technical Monitor)

2001-01-01

The objective of this project was to develop theory, approximations, and computer code to model quasi 1D structures such as nanotubes, DNA, and MOSFETs: (1) Nanotubes: Influence of defects on ballistic transport, electro-mechanical properties, and metal-nanotube coupling; (2) DNA: Model electron transfer (biochemistry) and transport experiments, and sequence dependence of conductance; and (3) MOSFETs: 2D doping profiles, polysilicon depletion, source to drain and gate tunneling, understand ballistic limit.

Temperature dependence of single-event burnout in n-channel power MOSFET's

NASA Astrophysics Data System (ADS)

Johnson, G. H.; Schrimpf, R. D.; Galloway, K. F.; Koga, R.

1994-03-01

The temperature dependence of single-event burnout (SEB) in n-channel power metal-oxide-semiconductor field effect transistors (MOSFET's) is investigated experimentally and analytically. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. This model is shown to agree with the experimental trends.

MOSFET Electric-Charge Sensor

NASA Technical Reports Server (NTRS)

Robinson, Paul A., Jr.

1988-01-01

Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

Switching transients in high-frequency high-power converters using power MOSFET's

NASA Technical Reports Server (NTRS)

Sloane, T. H.; Owen, H. A., Jr.; Wilson, T. G.

1979-01-01

The use of MOSFETs in a high-frequency high-power dc-to-dc converter is investigated. Consideration is given to the phenomena associated with the paralleling of MOSFETs and to the effect of stray circuit inductances on the converter circuit performance. Analytical relationships between various time constants during the turning-on and turning-off intervals are derived which provide estimates of plateau and peak levels during these intervals.

95 MeV oxygen ion irradiation effects on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ke, S. C.; Siddappa, K.

2003-09-01

The N-channel metal oxide semiconductor field effect transistors (MOSFETs) were exposed to 95 MeV oxygen ions, in the fluence range of 5 x 10(10) to 5 x 10(13) ions/cm(2). The influence of ion irradiation on threshold voltage (V-TH), linear drain current (I-DLin), leakage current (I-L), drain conductance (g(D)), transconductance (g(m)), mobility (mu) and drain saturation current (I-DSat) of MOSFETs was studied systematically for various fluence. The V-TH of the irradiated MOSFET was found to decrease significantly after irradiation. The interface (N-it) and oxide trapped charge (N-ot) were estimated from the subthreshold measurements and were found to increase after irradiation. The densities of oxide-trapped (DeltaN(it)) charge in irradiated MOSFETs were found to he higher than those of the interface trapped charge (DeltaN(ot)). The I-DLin and I-Dsat of MOSFETs were also found to decrease significantly after irradiation. Studies on effects of 95 MeV oxygen ion irradiation on g(m), g(D) and mu show a degradation varying front 70 to 75% after irradiation. The mobility degradation coefficients for N-it(alpha(it)) and N-ot(alpha(it)) were estimated. The results of these studies are presented and discussed.

Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor

PubMed Central

Zhao, Xiaofeng; Wen, Dianzhong; Li, Gang

2012-01-01

A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process and MEMS technology where channel resistances of the four nc-Si/c-Si heterojunction MOSFETs form a Wheatstone bridge. When the additional pressure is P, the nc-Si/c-Si heterojunction MOSFETs pressure sensor can measure this additional pressure P. The experimental results show that when the supply voltage is 3 V, length-width (L:W) ratio is 2:1, and the silicon membrane thickness is 75 μm, the full scale output voltage of the pressure sensor is 15.50 mV at room temperature, and pressure sensitivity is 0.097 mV/kPa. When the supply voltage and L:W ratio are the same as the above, and the silicon membrane thickness is 45 μm, the full scale output voltage is 43.05 mV, and pressure sensitivity is 2.153 mV/kPa. Therefore, the sensor has higher sensitivity and good temperature characteristics compared to the traditional piezoresistive pressure sensor. PMID:22778646

An extensive investigation of work function modulated trapezoidal recessed channel MOSFET

NASA Astrophysics Data System (ADS)

Lenka, Annada Shankar; Mishra, Sikha; Mishra, Satyaranjan; Bhanja, Urmila; Mishra, Guru Prasad

2017-11-01

The concept of silicon on insulator (SOI) and grooved gate help to lessen the short channel effects (SCEs). Again the work function modulation along the metal gate gives a better drain current due to the uniform electric field along the channel. So all these concepts are combined and used in the proposed MOSFET structure for more improved performance. In this work, trapezoidal recessed channel silicon on insulator (TRC-SOI) MOSFET and work function modulated trapezoidal recessed channel silicon on insulator (WFM-TRC-SOI) MOSFET are compared with DC and RF parameters and later linearity of both the devices is tested. An analytical model is formulated by using a 2-D Poisson's equation and develops a compact equation for threshold voltage using minimum surface potential. In this work we analyze the effect of negative junction depth and the corner angle on various device parameters such as minimum surface potential, sub-threshold slope (SS), drain induced barrier lowering (DIBL) and threshold voltage. The analysis interprets that the switching performance of WFM-TRC-SOI MOSFET surpasses TRC-SOI MOSFET in terms of high Ion/Ioff ratio and also the proposed structure can minimize the short channel effects (SCEs) in RF application. The validity of proposed model has been verified with simulation result performed on Sentaurus TCAD device simulator.

Reliability assessment and improvement for a fast corrector power supply in TPS

NASA Astrophysics Data System (ADS)

Liu, Kuo-Bin; Liu, Chen-Yao; Wang, Bao-Sheng; Wong, Yong Seng

2018-07-01

Fast Orbit Feedback System (FOFB) can be installed in a synchrotron light source to eliminate undesired disturbances and to improve the stability of beam orbit. The design and implementation of an accurate and reliable Fast Corrector Power Supply (FCPS) is essential to realize the effectiveness and availability of the FOFB. A reliability assessment for the FCPSs in the FOFB of Taiwan Photon Source (TPS) considering MOSFETs' temperatures is represented in this paper. The FCPS is composed of a full-bridge topology and a low-pass filter. A Hybrid Pulse Width Modulation (HPWM) requiring two MOSFETs in the full-bridge circuit to be operated at high frequency and the other two be operated at the output frequency is adopted to control the implemented FCPS. Due the characteristic of HPWM, the conduction loss and switching loss of each MOSFET in the FCPS is not same. Two of the MOSFETs in the full-bridge circuit will suffer higher temperatures and therefore the circuit reliability of FCPS is reduced. A Modified PWM Scheme (MPWMS) designed to average MOSFETs' temperatures and to improve circuit reliability is proposed in this paper. Experimental results measure the MOSFETs' temperatures of FCPS controlled by the HPWM and the proposed MPWMS. The reliability indices under different PWM controls are then assessed. From the experimental results, it can be observed that the reliability of FCPS using the proposed MPWMS can be improved because the MOSFETs' temperatures are closer. Since the reliability of FCPS can be enhanced, the availability of FOFB can also be improved.

Design and optimization analysis of dual material gate on DG-IMOS

NASA Astrophysics Data System (ADS)

Singh, Sarabdeep; Raman, Ashish; Kumar, Naveen

2017-12-01

An impact ionization MOSFET (IMOS) is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope (SS) of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate impact ionization MOSFET (DG-IMOS) is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. Secondly, the DMG (dual material gate) DG-IMOS is proposed and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better I ON, I ON/I OFF ratio, and RF parameters. Results show that by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized performance is achieved including I ON/I OFF ratio of 2.87 × 109 A/μm with I ON as 11.87 × 10-4 A/μm and transconductance of 1.06 × 10-3 S/μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS.

SU-E-T-749: Thorough Calibration of MOSFET Dosimeters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Plenkovich, D; Thomas, J

Purpose: To improve the accuracy of the MOSFET calibration procedure by performing the measurement several times and calculating the average value of the calibration factor for various photon and electron energies. Methods: The output of three photon and six electron beams of Varian Trilogy linear accelerator SN 5878 was calibrated. Five reinforced standard sensitivity MOSFET dosimeters were placed in the calibration jig and connected to the Reader Module. As the backscatter material was used 7 cm of Virtual Water. The MOSFET dosimeters were covered with 1.5 cm thick bolus for the regular and SRS 6 MV beams, 3 cm bolusmore » for 15 MV beam, 1.5 cm bolus for 6 MeV electron beam, and 2 cm bolus for the electron energies of 9, 12, 15, 18, and 22 MeV. The dosimeters were exposed to 100 MU, and the calibration factor was determined using the mobileMOSFET software. To improve the accuracy of calibration, this procedure was repeated ten times and the calibration factors were averaged. Results: As the number of calibrations was increasing the variability of calibration factors of different dosimeters was decreasing. After ten calibrations, the calibration factors for all five dosimeters were within 1% of one another for all energies, except 6 MV SRS photons and 6 MeV electrons, for which the variability was 2%. Conclusions: The described process results in calibration factors which are almost independent of modality or energy. Once calibrated, the dosimeters may be used for in-vivo dosimetry or for daily verification of the beam output. Measurement of the radiation dose under bolus and scatter to the eye are examples of frequent use of calibrated MOSFET dosimeters. The calibration factor determined for full build-up is used under these circumstances. To the best of our knowledge, such thorough procedure for calibrating MOSFET dosimeters has not been reported previously. Best Medical Canada provided MOSFET dosimeters for this project.« less

SU-E-T-275: Dose Verification in a Small Animal Image-Guided Radiation Therapy X-Ray Machine: A Dose Comparison between TG-61 Based Look-Up Table and MOSFET Method for Various Collimator Sizes.

PubMed

Rodrigues, A; Nguyen, G; Li, Y; Roy Choudhury, K; Kirsch, D; Das, S; Yoshizumi, T

2012-06-01

To verify the accuracy of TG-61 based dosimetry with MOSFET technology using a tissue-equivalent mouse phantom. Accuracy of mouse dose between a TG-61 based look-up table was verified with MOSFET technology. The look-up table followed a TG-61 based commissioning and used a solid water block and radiochromic film. A tissue-equivalent mouse phantom (2 cm diameter, 8 cm length) was used for the MOSFET method. Detectors were placed in the phantom at the head and center of the body. MOSFETs were calibrated in air with an ion chamber and f-factor was applied to derive the dose to tissue. In CBCT mode, the phantom was positioned such that the system isocenter coincided with the center of the MOSFET with the active volume perpendicular to the beam. The absorbed dose was measured three times for seven different collimators, respectively. The exposure parameters were 225 kVp, 13 mA, and an exposure time of 20 s. For a 10 mm, 15 mm, and 20 mm circular collimator, the dose measured by the phantom was 4.3%, 2.7%, and 6% lower than TG-61 based measurements, respectively. For a 10 × 10 mm, 20 × 20 mm, and 40 × 40 mm collimator, the dose difference was 4.7%, 7.7%, and 2.9%, respectively. The MOSFET data was systematically lower than the commissioning data. The dose difference is due to the increased scatter radiation in the solid water block versus the dimension of the mouse phantom leading to an overestimation of the actual dose in the solid water block. The MOSFET method with the use of a tissue- equivalent mouse phantom provides less labor intensive geometry-specific dosimetry and accuracy with better dose tolerances of up to ± 2.7%. © 2012 American Association of Physicists in Medicine.

Probing the SEB Sensitive Depth of a Power MOSFET Using a Two-Photon Absorption Laser Method

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Liu, Sandra; Titus, Jeffrey L.; McMorrow, Dale; Casey, Megan C.; Buchner, Stephen P.; Warner, Jeffrey; Phan, Anthony M.; Topper, Alyson D.; Kim, Hak S.;

Forecasting of the performance of MOS device for space applications

NASA Technical Reports Server (NTRS)

Fang, P. H.

1971-01-01

Analysis of radiation damage of MOSFET data from Explorer 34 (IMP-F), and radiation damage characteristics of MOSFET with boron diffused between a silicon semiconductor and silicon oxide are considered. The first subject is an interpretation of the discrepancy between the space data and the laboratory data. The second subject is an attempt to analyze the radiation damage characteristic of MOSFET when there is modification of electrical properties in the gate oxide region.

Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cipro, R.; Gorbenko, V.; Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble

2014-06-30

Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface in a SiO{sub 2} cavity with an aspect ratio as low as 1.3 is efficient to completely annihilate the anti-phase boundary domains. InGaAs quantum wells were grown on a GaAs buffer and exhibit room temperature micro-photoluminescence. Cathodoluminescence reveals the presence of dark spots which could be associated with the presence of emerging dislocation in a direction parallel to the cavity. Themore » InGaAs layers obtained with no antiphase boundaries are perfect candidates for being integrated as channels in n-type metal oxide semiconductor field effect transistor (MOSFET), while the low temperatures used allow the co-integration of p-type MOSFET.« less

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1991-01-01

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Characterization of metal oxide field-effect transistors for first helical tomotherapy Hi-Art II unit in India.

PubMed

Kinhikar, Rajesh A; Pai, Rajeshree; Master, Zubin; Deshpande, Deepak D

2009-01-01

To characterize metal oxide semiconductor field-effect transistors (MOSFETs) for a 6-MV photon beam with a first helical tomotherapy Hi-Art II unit in India. Standard sensitivity MOSFETs were first calibrated and then characterized for reproducibility, field size dependence, angular dependence, fade effects, and temperature dependence. The detector sensitivity was estimated for static as well as rotational modes for three jaw settings (1.0 cm x 40 cm, 2.5 cm x 40 cm, and 5 cm x 40 cm) at 1.5-cm depth with a source-to-axis distance (SAD) of 85 cm in virtual water slabs. The A1SL ion chamber and thermoluminescence dosimeters (TLDs) were used to compare the results. No significant difference was found in the detector sensitivity for static and rotational procedures. The average detector sensitivity for static procedures was 1.10 mV/cGy (SD 0.02) while it was 1.12 mV/cGy (SD 0.02) for rotational procedures. The average detector sensitivity found was the same within the experimental uncertainty for static and rotational dose deliveries. The MOSFET reading was consistent and its reproducibility was excellent (+0.5%) while there was no significant dependence of field size. The angular dependence of less than 1.0% was observed. There was negligible fading effect of the MOSFET. The MOSFET response was found independent of temperature in the range 18 degrees-30 degrees. The ion chamber readings were assumed to be a reference for the estimation of the MOSFET calibration factor. The ion chamber and the TLD were in good agreement (+2%) with each other. This study deals only with the measurements and calibration performed on the surface of the phantom. MOSFET was calibrated and validated for phantom surface measurements for a 6-MV photon beam generated by a tomotherapy machine. The sensitivity of the detector was the same for both modes of treatment delivery with tomotherapy. The performance of the MOSFET was validated for and satisfactory for the helical tomotherapy Hi-Art II unit. However, MOSFET may be used for in vivo surface dosimetry only after it is calibrated under the conditions replicating as much as possible the manner in which the dosimeter will be used clinically.

Monte Carlo simulation of MOSFET dosimeter for electron backscatter using the GEANT4 code.

PubMed

Chow, James C L; Leung, Michael K K

2008-06-01

The aim of this study is to investigate the influence of the body of the metal-oxide-semiconductor field effect transistor (MOSFET) dosimeter in measuring the electron backscatter from lead. The electron backscatter factor (EBF), which is defined as the ratio of dose at the tissue-lead interface to the dose at the same point without the presence of backscatter, was calculated by the Monte Carlo simulation using the GEANT4 code. Electron beams with energies of 4, 6, 9, and 12 MeV were used in the simulation. It was found that in the presence of the MOSFET body, the EBFs were underestimated by about 2%-0.9% for electron beam energies of 4-12 MeV, respectively. The trend of the decrease of EBF with an increase of electron energy can be explained by the small MOSFET dosimeter, mainly made of epoxy and silicon, not only attenuated the electron fluence of the electron beam from upstream, but also the electron backscatter generated by the lead underneath the dosimeter. However, this variation of the EBF underestimation is within the same order of the statistical uncertainties as the Monte Carlo simulations, which ranged from 1.3% to 0.8% for the electron energies of 4-12 MeV, due to the small dosimetric volume. Such small EBF deviation is therefore insignificant when the uncertainty of the Monte Carlo simulation is taken into account. Corresponding measurements were carried out and uncertainties compared to Monte Carlo results were within +/- 2%. Spectra of energy deposited by the backscattered electrons in dosimetric volumes with and without the lead and MOSFET were determined by Monte Carlo simulations. It was found that in both cases, when the MOSFET body is either present or absent in the simulation, deviations of electron energy spectra with and without the lead decrease with an increase of the electron beam energy. Moreover, the softer spectrum of the backscattered electron when lead is present can result in a reduction of the MOSFET response due to stronger recombination in the SiO2 gate. It is concluded that the MOSFET dosimeter performed well for measuring the electron backscatter from lead using electron beams. The uncertainty of EBF determined by comparing the results of Monte Carlo simulations and measurements is well within the accuracy of the MOSFET dosimeter (< +/- 4.2%) provided by the manufacturer.

Development of an applicator for eye lens dosimetry during radiotherapy.

PubMed

Park, J M; Lee, J; Kim, H S; Ye, S-J; Kim, J-I

2014-10-01

To develop an applicator for in vivo measurements of lens dose during radiotherapy. A contact lens-shaped applicator made of acrylic was developed for in vivo measurements of lens dose. This lens applicator allows the insertion of commercially available metal oxide semiconductor field effect transistors (MOSFETs) dosemeters. CT images of an anthropomorphic phantom with and without the applicator were acquired. Ten volumetric modulated arc therapy plans each for the brain and the head and neck cancer were generated and delivered to an anthropomorphic phantom. The differences between the measured and the calculated doses at the lens applicator, as well as the differences between the measured and the calculated doses at the surface of the eyelid were acquired. The average difference between the measured and the calculated doses with the applicator was 3.1 ± 1.8 cGy with a micro MOSFET and 2.8 ± 1.3 cGy with a standard MOSFET. The average difference without the lens applicator was 4.8 ± 5.2 cGy with the micro MOSFET and 5.7 ± 6.5 cGy with the standard MOSFET. The maximum difference with the micro MOSFET was 10.5 cGy with the applicator and 21.1 cGy without the applicator. For the standard MOSFET, it was 6.8 cGy with the applicator and 27.6 cGy without the applicator. The lens applicator allowed reduction of the differences between the calculated and the measured doses during in vivo measurement for the lens compared with in vivo measurement at the surface of the eyelid. By using an applicator for in vivo dosimetry of the eye lens, it was possible to reduce the measurement uncertainty.

ZnO-based multiple channel and multiple gate FinMOSFETs

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Huang, Hung-Lin; Tseng, Chun-Yen; Lee, Hsin-Ying

2016-02-01

In recent years, zinc oxide (ZnO)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) have attracted much attention, because ZnO-based semiconductors possess several advantages, including large exciton binding energy, nontoxicity, biocompatibility, low material cost, and wide direct bandgap. Moreover, the ZnO-based MOSFET is one of most potential devices, due to the applications in microwave power amplifiers, logic circuits, large scale integrated circuits, and logic swing. In this study, to enhance the performances of the ZnO-based MOSFETs, the ZnObased multiple channel and multiple gate structured FinMOSFETs were fabricated using the simple laser interference photolithography method and the self-aligned photolithography method. The multiple channel structure possessed the additional sidewall depletion width control ability to improve the channel controllability, because the multiple channel sidewall portions were surrounded by the gate electrode. Furthermore, the multiple gate structure had a shorter distance between source and gate and a shorter gate length between two gates to enhance the gate operating performances. Besides, the shorter distance between source and gate could enhance the electron velocity in the channel fin structure of the multiple gate structure. In this work, ninety one channels and four gates were used in the FinMOSFETs. Consequently, the drain-source saturation current (IDSS) and maximum transconductance (gm) of the ZnO-based multiple channel and multiple gate structured FinFETs operated at a drain-source voltage (VDS) of 10 V and a gate-source voltage (VGS) of 0 V were respectively improved from 11.5 mA/mm to 13.7 mA/mm and from 4.1 mS/mm to 6.9 mS/mm in comparison with that of the conventional ZnO-based single channel and single gate MOSFETs.

Characteristics of mobile MOSFET dosimetry system for megavoltage photon beams

PubMed Central

Kumar, A. Sathish; Sharma, S. D.; Ravindran, B. Paul

2014-01-01

The characteristics of a mobile metal oxide semiconductor field effect transistor (mobile MOSFET) detector for standard bias were investigated for megavoltage photon beams. This study was performed with a brass alloy build-up cap for three energies namely Co-60, 6 and 15 MV photon beams. The MOSFETs were calibrated and the performance characteristics were analyzed with respect to dose rate dependence, energy dependence, field size dependence, linearity, build-up factor, and angular dependence for all the three energies. A linear dose-response curve was noted for Co-60, 6 MV, and 15 MV photons. The calibration factors were found to be 1.03, 1, and 0.79 cGy/mV for Co-60, 6 MV, and 15 MV photon energies, respectively. The calibration graph has been obtained to the dose up to 600 cGy, and the dose-response curve was found to be linear. The MOSFETs were found to be energy independent both for measurements performed at depth as well as on the surface with build-up. However, field size dependence was also analyzed for variable field sizes and found to be field size independent. Angular dependence was analyzed by keeping the MOSFET dosimeter in parallel and perpendicular orientation to the angle of incidence of the radiation with and without build-up on the surface of the phantom. The maximum variation for the three energies was found to be within ± 2% for the gantry angles 90° and 270°, the deviations without the build-up for the same gantry angles were found to be 6%, 25%, and 60%, respectively. The MOSFET response was found to be independent of dose rate for all three energies. The dosimetric characteristics of the MOSFET detector make it a suitable in vivo dosimeter for megavoltage photon beams. PMID:25190992

Evaluation of clinical use of OneDose™ metal oxide semiconductor field-effect transistor detectors compared to thermoluminescent dosimeters to measure skin dose for adult patients with acute lymphoblastic leukemia

PubMed Central

Al-Mohammed, Huda Ibrahim

2011-01-01

Background: Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to their bone marrow transplant. It involves the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore, it is important to measure and monitor the skin dose during the treatment. Thermoluminescent dosimeters (TLDs) and the OneDose™ metal oxide semiconductor field effect transistor (MOSFET) detectors are used during treatment delivery to measure the radiation dose and compare it with the target prescribed dose. Aims: The primary goal of this study was to measure the variation of skin dose using OneDose MOSFET detectors and TLD detectors, and compare the results with the target prescribed dose. The secondary aim was to evaluate the simplicity of use and determine if one system was superior to the other in clinical use. Material and Methods: The measurements involved twelve adult patients diagnosed with acute lymphoblastic leukemia. TLD and OneDose MOSFET dosimetry were performed at ten different anatomical sites of each patient. Results: The results showed that there was a variation between skin dose measured with OneDose MOSFET detectors and TLD in all patients. However, the variation was not significant. Furthermore, the results showed for every anatomical site there was no significant different between the prescribed dose and the dose measured by either TLD or OneDose MOSFET detectors. Conclusion: There were no significant differences between the OneDose MOSFET and TLDs in comparison to the target prescribed dose. However, OneDose MOSFET detectors give a direct read-out immediately after the treatment, and their simplicity of use to compare with TLD detectors may make them preferred for clinical use. PMID:22171243

Characteristics of mobile MOSFET dosimetry system for megavoltage photon beams.

PubMed

Kumar, A Sathish; Sharma, S D; Ravindran, B Paul

2014-07-01

The characteristics of a mobile metal oxide semiconductor field effect transistor (mobile MOSFET) detector for standard bias were investigated for megavoltage photon beams. This study was performed with a brass alloy build-up cap for three energies namely Co-60, 6 and 15 MV photon beams. The MOSFETs were calibrated and the performance characteristics were analyzed with respect to dose rate dependence, energy dependence, field size dependence, linearity, build-up factor, and angular dependence for all the three energies. A linear dose-response curve was noted for Co-60, 6 MV, and 15 MV photons. The calibration factors were found to be 1.03, 1, and 0.79 cGy/mV for Co-60, 6 MV, and 15 MV photon energies, respectively. The calibration graph has been obtained to the dose up to 600 cGy, and the dose-response curve was found to be linear. The MOSFETs were found to be energy independent both for measurements performed at depth as well as on the surface with build-up. However, field size dependence was also analyzed for variable field sizes and found to be field size independent. Angular dependence was analyzed by keeping the MOSFET dosimeter in parallel and perpendicular orientation to the angle of incidence of the radiation with and without build-up on the surface of the phantom. The maximum variation for the three energies was found to be within ± 2% for the gantry angles 90° and 270°, the deviations without the build-up for the same gantry angles were found to be 6%, 25%, and 60%, respectively. The MOSFET response was found to be independent of dose rate for all three energies. The dosimetric characteristics of the MOSFET detector make it a suitable in vivo dosimeter for megavoltage photon beams.

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

PubMed

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

Clinical implementation of MOSFET detectors for dosimetry in electron beams.

PubMed

Bloemen-van Gurp, Esther J; Minken, Andre W H; Mijnheer, Ben J; Dehing-Oberye, Cary J G; Lambin, Philippe

2006-09-01

To determine the factors converting the reading of a MOSFET detector placed on the patient's skin without additional build-up to the dose at the depth of dose maximum (D(max)) and investigate their feasibility for in vivo dose measurements in electron beams. Factors were determined to relate the reading of a MOSFET detector to D(max) for 4 - 15 MeV electron beams in reference conditions. The influence of variation in field size, SSD, angle and field shape on the MOSFET reading, obtained without additional build-up, was evaluated using 4, 8 and 15 MeV beams and compared to ionisation chamber data at the depth of dose maximum (z(max)). Patient entrance in vivo measurements included 40 patients, mostly treated for breast tumours. The MOSFET reading, converted to D(max), was compared to the dose prescribed at this depth. The factors to convert MOSFET reading to D(max) vary between 1.33 and 1.20 for the 4 and 15 MeV beams, respectively. The SSD correction factor is approximately 8% for a change in SSD from 95 to 100 cm, and 2% for each 5-cm increment above 100 cm SSD. A correction for fields having sides smaller than 6 cm and for irregular field shape is also recommended. For fields up to 20 x 20 cm(2) and for oblique incidence up to 45 degrees, a correction is not necessary. Patient measurements demonstrated deviations from the prescribed dose with a mean difference of -0.7% and a standard deviation of 2.9%. Performing dose measurements with MOSFET detectors placed on the patient's skin without additional build-up is a well suited technique for routine dose verification in electron beams, when applying the appropriate conversion and correction factors.

Evaluation of linear array MOSFET detectors for in vivo dosimetry to measure rectal dose in HDR brachytherapy.

PubMed

Haughey, Aisling; Coalter, George; Mugabe, Koki

2011-09-01

The study aimed to assess the suitability of linear array metal oxide semiconductor field effect transistor detectors (MOSFETs) as in vivo dosimeters to measure rectal dose in high dose rate brachytherapy treatments. The MOSFET arrays were calibrated with an Ir192 source and phantom measurements were performed to check agreement with the treatment planning system. The angular dependence, linearity and constancy of the detectors were evaluated. For in vivo measurements two sites were investigated, transperineal needle implants for prostate cancer and Fletcher suites for cervical cancer. The MOSFETs were inserted into the patients' rectum in theatre inside a modified flatus tube. The patients were then CT scanned for treatment planning. Measured rectal doses during treatment were compared with point dose measurements predicted by the TPS. The MOSFETs were found to require individual calibration factors. The calibration was found to drift by approximately 1% ±0.8 per 500 mV accumulated and varies with distance from source due to energy dependence. In vivo results for prostate patients found only 33% of measured doses agreed with the TPS within ±10%. For cervix cases 42% of measured doses agreed with the TPS within ±10%, however of those not agreeing variations of up to 70% were observed. One of the most limiting factors in this study was found to be the inability to prevent the MOSFET moving internally between the time of CT and treatment. Due to the many uncertainties associated with MOSFETs including calibration drift, angular dependence and the inability to know their exact position at the time of treatment, we consider them to be unsuitable for in vivo dosimetry in rectum for HDR brachytherapy.

A two-dimensional (2D) analytical subthreshold swing and transconductance model of underlap dual-material double-gate (DMDG) MOSFET for analog/RF applications

NASA Astrophysics Data System (ADS)

Narendar, Vadthiya; Rai, Saurabh; Tiwari, Siddharth; Mishra, R. A.

2016-12-01

The double-gate (DG) metal-oxide-semiconductor field effect transistors (MOSFETs) are the choice of technology in sub -100 nm regime of leading microelectronics industry. To enhance the analog and RF performance of DG MOSFET, an underlap dual-material (DM) DG MOSFET device structure has been considered because, it has the advantages of both underlap as well as that of dual-material gate (DMG). A 2D analytical surface potential, subthreshold current, subthreshold swing as well as transconductance modelling of underlap DMDG MOSFET has been done by solving the Poisson's equation. It has also been found that, numerically simulated data approves the analytically modelled data with commendable accuracy. As underlap length (Lun) increases, a substantial reduction of subthreshold current due to enhanced gate control over channel regime is observed. DMG structure facilitates to improve the average velocity of carriers which leads to superior drive current of the device. The underlap DMDG MOSFET device structure demonstrates an ameliorated subthreshold characteristic. The analog figure of merits (FOMs) such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd), early voltage (VEA), intrinsic gain (AV) and RF FOMs namely cut-off frequency (fT), gain frequency product (GFP), transconductance frequency product (TFP) and gain transconductance frequency product (GTFP) have been evaluated. The aforesaid analysis revels that, the device is best suited for communication related Analog/RF applications.

Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime

NASA Astrophysics Data System (ADS)

Swami, Yashu; Rai, Sanjeev

2017-02-01

The high leakage current in nano-meter regimes is becoming a significant portion of power dissipation in nano-MOSFET circuits as threshold voltage, channel length, and gate oxide thickness are scaled down to nano-meter range. Precise leakage current valuation and meticulous modeling of the same at nano-meter technology scale is an increasingly a critical work in designing the low power nano-MOSFET circuits. We present a specific compact model for sub-threshold regime leakage current in bulk driven nano-MOSFETs. The proposed logical model is instigated and executed into the latest updated PTM bulk nano-MOSFET model and is found to be in decent accord with technology-CAD simulation data. This paper also reviews various transistor intrinsic leakage mechanisms for nano-MOSFET exclusively in weak inversion, like drain-induced barricade lowering (DIBL), gate-induced drain leakage (GIDL), gate oxide tunneling (GOT) leakage etc. The root cause of the sub-surface leakage current is mainly due to the nano-scale short channel length causing source-drain coupling even in sub-threshold domain. Consequences leading to carriers triumphing the barricade between the source and drain. The enhanced model effectively considers the following parameter dependence in the account for better-quality value-added results like drain-to-source bias (VDS), gate-to-source bias (VGS), channel length (LG), source/drain junction depth (Xj), bulk doping concentration (NBULK), and operating temperature (Top).

An experimental MOSFET approach to characterize (192)Ir HDR source anisotropy.

PubMed

Toye, W C; Das, K R; Todd, S P; Kenny, M B; Franich, R D; Johnston, P N

2007-09-07

The dose anisotropy around a (192)Ir HDR source in a water phantom has been measured using MOSFETs as relative dosimeters. In addition, modeling using the EGSnrc code has been performed to provide a complete dose distribution consistent with the MOSFET measurements. Doses around the Nucletron 'classic' (192)Ir HDR source were measured for a range of radial distances from 5 to 30 mm within a 40 x 30 x 30 cm(3) water phantom, using a TN-RD-50 MOSFET dosimetry system with an active area of 0.2 mm by 0.2 mm. For each successive measurement a linear stepper capable of movement in intervals of 0.0125 mm re-positioned the MOSFET at the required radial distance, while a rotational stepper enabled angular displacement of the source at intervals of 0.9 degrees . The source-dosimeter arrangement within the water phantom was modeled using the standardized cylindrical geometry of the DOSRZnrc user code. In general, the measured relative anisotropy at each radial distance from 5 mm to 30 mm is in good agreement with the EGSnrc simulations, benchmark Monte Carlo simulation and TLD measurements where they exist. The experimental approach employing a MOSFET detection system of small size, high spatial resolution and fast read out capability allowed a practical approach to the determination of dose anisotropy around a HDR source.

Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

NASA Technical Reports Server (NTRS)

Scheick, Leif

2010-01-01

The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

NASA Astrophysics Data System (ADS)

Talbo, V.; Mateos, J.; González, T.; Lechaux, Y.; Wichmann, N.; Bollaert, S.; Vasallo, B. G.

2015-10-01

Impact-ionization metal-oxide-semiconductor FETs (I-MOSFETs) are in competition with tunnel FETs (TFETs) in order to achieve the best behaviour for low power logic circuits. Concretely, III-V I-MOSFETs are being explored as promising devices due to the proper reliability, since the impact ionization events happen away from the gate oxide, and the high cutoff frequency, due to high electron mobility. To facilitate the design process from the physical point of view, a Monte Carlo (MC) model which includes both impact ionization and band-to-band tunnel is presented. Two ungated InGaAs and InAlAs/InGaAs 100 nm PIN diodes have been simulated. In both devices, the tunnel processes are more frequent than impact ionizations, so that they are found to be appropriate for TFET structures and not for I- MOSFETs. According to our simulations, other narrow bandgap candidates for the III-V heterostructure, such as InAs or GaSb, and/or PININ structures must be considered for a correct I-MOSFET design.

Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

DOE PAGES

Ji, Shiqi; Zheng, Sheng; Wang, Fei; ...

2017-07-06

The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simplemore » behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.« less

Silicon Carbide MOSFET-Based Switching Power Amplifier for Precision Magnet Control

NASA Astrophysics Data System (ADS)

Miller, Kenneth; Ziemba, Timothy; Prager, James; Picard, Julian

2016-10-01

Eagle Harbor Technologies, Inc. (EHT) is using the latest in solid-state switching technologies to advance the state-of-the-art in magnet control for fusion science. Silicon carbide (SiC) MOSFETs offer advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. To validate the design, EHT has developed a low-power switching power amplifier (SPA), which has been used for precision control of magnetic fields, including rapidly changing the fields in coils. This design has been incorporated in to a high power SPA, which has been bench tested. This high power SPA will be tested at the Helicity Injected Torus (HIT) at the University of Washington. Following successful testing, EHT will produce enough SiC MOSFET-based SPAs to replace all of the units at HIT, which allows for higher frequency operation and an overall increase in pulsed current levels.

Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Shiqi; Zheng, Sheng; Wang, Fei

The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simplemore » behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.« less

Implementation and comparative analysis of the optimisations produced by evolutionary algorithms for the parameter extraction of PSP MOSFET model

NASA Astrophysics Data System (ADS)

Hadia, Sarman K.; Thakker, R. A.; Bhatt, Kirit R.

2016-05-01

The study proposes an application of evolutionary algorithms, specifically an artificial bee colony (ABC), variant ABC and particle swarm optimisation (PSO), to extract the parameters of metal oxide semiconductor field effect transistor (MOSFET) model. These algorithms are applied for the MOSFET parameter extraction problem using a Pennsylvania surface potential model. MOSFET parameter extraction procedures involve reducing the error between measured and modelled data. This study shows that ABC algorithm optimises the parameter values based on intelligent activities of honey bee swarms. Some modifications have also been applied to the basic ABC algorithm. Particle swarm optimisation is a population-based stochastic optimisation method that is based on bird flocking activities. The performances of these algorithms are compared with respect to the quality of the solutions. The simulation results of this study show that the PSO algorithm performs better than the variant ABC and basic ABC algorithm for the parameter extraction of the MOSFET model; also the implementation of the ABC algorithm is shown to be simpler than that of the PSO algorithm.

In vivo prostate IMRT dosimetry with MOSFET detectors using brass buildup caps

PubMed Central

Varadhan, Raj; Miller, John; Garrity, Brenden; Weber, Michael

2006-01-01

The feasibility of using dual bias metal oxide semiconductor field effect transistor (MOSFET) detectors with the new hemispherical brass buildup cap for in vivo dose measurements in prostate intensity‐modulated radiotherapy (IMRT) treatments was investigated and achieved. In this work, MOSFET detectors with brass buildup caps placed on the patient's skin surface on the central axis of the individual IMRT beams are used to determine the maximum entrance dose (Dmax) from the prostate IMRT fields. A general formalism with various correction factors taken into account to predict Dmax entrance dose for the IMRT fields with MOSFETs was developed and compared against predicted dose from the treatment‐planning system (TPS). We achieved an overall accuracy of better than ±5% on all measured fields for both 6‐MV and 10‐MV beams when compared to predicted doses from the Philips Pinnacle 3 and CMS XiO TPSs, respectively. We also estimate the total uncertainty in estimation of MOSFET dose in the high‐sensitivity mode for IMRT therapy to be 4.6%. PACS numbers: 87.53Xd, 87.56Fc PMID:17533354

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pratap, Surender; Sarkar, Niladri, E-mail: niladri@pilani.bits-pilani.ac.in

Self-Consistent Quantum Method using Schrodinger-Poisson equations have been used for determining the Channel electron density of Nano-Scale MOSFETs for 6nm and 9nm thick channels. The 6nm thick MOSFET show the peak of the electron density at the middle where as the 9nm thick MOSFET shows the accumulation of the electrons at the oxide/semiconductor interface. The electron density in the channel is obtained from the diagonal elements of the density matrix; [ρ]=[1/(1+exp(β(H − μ)))] A Tridiagonal Hamiltonian Matrix [H] is constructed for the oxide/channel/oxide 1D structure for the dual gate MOSFET. This structure is discretized and Finite-Difference method is used formore » constructing the matrix equation. The comparison of these results which are obtained by Quantum methods are done with Semi-Classical methods.« less

Effects of Lightning Injection on Power-MOSFETs

NASA Technical Reports Server (NTRS)

Celaya, Jose; Saha, Sankalita; Wysocki, Phil; Ely, Jay; Nguyen, Truong; Szatkowski, George; Koppen, Sandra; Mielnik, John; Vaughan, Roger; Goebel, Kai

2009-01-01

Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pin-injecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable. Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection, leading to significant deviation in its behavior and performance, and to possibly early device failures.

Improving Current Balance In Parallel MOSFET's

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

1992-01-01

Simple circuit makes currents more nearly equal. Addition of diodes and adjustable-tap resistor increases operating range over which drain currents in two unmatched power MOSFET's brought more nearly into balance.

Comparison between the effects of positive noncatastrophic HMB ESD stress in n-channel and p-channel power MOSFET's

NASA Astrophysics Data System (ADS)

Zupac, Dragan; Kosier, Steven L.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Baum, Keith W.

1991-10-01

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.

Methods of in vivo radiation measurement

DOEpatents

Huffman, Dennis D.; Hughes, Robert C.; Kelsey, Charles A.; Lane, Richard; Ricco, Antonio J.; Snelling, Jay B.; Zipperian, Thomas E.

1990-01-01

Methods of and apparatus for in vivo radiation measurements relay on a MOSFET dosimeter of high radiation sensitivity with operates in both the passive mode to provide an integrated dose detector and active mode to provide an irradiation rate detector. A compensating circuit with a matched unirradiated MOSFET is provided to operate at a current designed to eliminate temperature dependence of the device. Preferably, the MOSFET is rigidly mounted in the end of a miniature catheter and the catheter is implanted in the patient proximate the radiation source.

Power-MOSFET Voltage Regulator

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1982-01-01

Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices

DTIC Science & Technology

2007-08-01

investigated are insulated-gate bipolar transistors ( IGBTs ) in 4H-SiC. The IGBT combines the best aspects of MOS and bipolar power transistors... IGBTs can be thought of as a fusion of a MOSFET and a BJT. The MOSFET provides a high input impedance while the BJT provides conductivity modulation of...region due to conductivity modulation from the forward-biased BJT. The IGBT is structurally identical to a MOSFET, except that the substrate doping

MOSFET Replacement Devices for Energy-Efficient Digital Integrated Circuits

DTIC Science & Technology

2009-12-17

MOSFET is limited by the thermal voltage kBT/q; it is greater than or equal to 60mV/dec at room temperature. Fig. 1.4 The potential barrier for...60mV/dec can be explained by the electron energy band profile of a MOSFET, which is shown in Fig. 1.4. As Vgs increases, the channel potential is...channel potential (φs) reduces the potential barrier for electron injection, and hence the electron energy (E) increases. According to the Boltzmann

Monte Carlo simulation of MOSFET detectors for high-energy photon beams using the PENELOPE code

NASA Astrophysics Data System (ADS)

Panettieri, Vanessa; Amor Duch, Maria; Jornet, Núria; Ginjaume, Mercè; Carrasco, Pablo; Badal, Andreu; Ortega, Xavier; Ribas, Montserrat

2007-01-01

The aim of this work was the Monte Carlo (MC) simulation of the response of commercially available dosimeters based on metal oxide semiconductor field effect transistors (MOSFETs) for radiotherapeutic photon beams using the PENELOPE code. The studied Thomson&Nielsen TN-502-RD MOSFETs have a very small sensitive area of 0.04 mm2 and a thickness of 0.5 µm which is placed on a flat kapton base and covered by a rounded layer of black epoxy resin. The influence of different metallic and Plastic water™ build-up caps, together with the orientation of the detector have been investigated for the specific application of MOSFET detectors for entrance in vivo dosimetry. Additionally, the energy dependence of MOSFET detectors for different high-energy photon beams (with energy >1.25 MeV) has been calculated. Calculations were carried out for simulated 6 MV and 18 MV x-ray beams generated by a Varian Clinac 1800 linear accelerator, a Co-60 photon beam from a Theratron 780 unit, and monoenergetic photon beams ranging from 2 MeV to 10 MeV. The results of the validation of the simulated photon beams show that the average difference between MC results and reference data is negligible, within 0.3%. MC simulated results of the effect of the build-up caps on the MOSFET response are in good agreement with experimental measurements, within the uncertainties. In particular, for the 18 MV photon beam the response of the detectors under a tungsten cap is 48% higher than for a 2 cm Plastic water™ cap and approximately 26% higher when a brass cap is used. This effect is demonstrated to be caused by positron production in the build-up caps of higher atomic number. This work also shows that the MOSFET detectors produce a higher signal when their rounded side is facing the beam (up to 6%) and that there is a significant variation (up to 50%) in the response of the MOSFET for photon energies in the studied energy range. All the results have shown that the PENELOPE code system can successfully reproduce the response of a detector with such a small active area.

Monte Carlo simulation of MOSFET detectors for high-energy photon beams using the PENELOPE code.

PubMed

Panettieri, Vanessa; Duch, Maria Amor; Jornet, Núria; Ginjaume, Mercè; Carrasco, Pablo; Badal, Andreu; Ortega, Xavier; Ribas, Montserrat

2007-01-07

The aim of this work was the Monte Carlo (MC) simulation of the response of commercially available dosimeters based on metal oxide semiconductor field effect transistors (MOSFETs) for radiotherapeutic photon beams using the PENELOPE code. The studied Thomson&Nielsen TN-502-RD MOSFETs have a very small sensitive area of 0.04 mm(2) and a thickness of 0.5 microm which is placed on a flat kapton base and covered by a rounded layer of black epoxy resin. The influence of different metallic and Plastic water build-up caps, together with the orientation of the detector have been investigated for the specific application of MOSFET detectors for entrance in vivo dosimetry. Additionally, the energy dependence of MOSFET detectors for different high-energy photon beams (with energy >1.25 MeV) has been calculated. Calculations were carried out for simulated 6 MV and 18 MV x-ray beams generated by a Varian Clinac 1800 linear accelerator, a Co-60 photon beam from a Theratron 780 unit, and monoenergetic photon beams ranging from 2 MeV to 10 MeV. The results of the validation of the simulated photon beams show that the average difference between MC results and reference data is negligible, within 0.3%. MC simulated results of the effect of the build-up caps on the MOSFET response are in good agreement with experimental measurements, within the uncertainties. In particular, for the 18 MV photon beam the response of the detectors under a tungsten cap is 48% higher than for a 2 cm Plastic water cap and approximately 26% higher when a brass cap is used. This effect is demonstrated to be caused by positron production in the build-up caps of higher atomic number. This work also shows that the MOSFET detectors produce a higher signal when their rounded side is facing the beam (up to 6%) and that there is a significant variation (up to 50%) in the response of the MOSFET for photon energies in the studied energy range. All the results have shown that the PENELOPE code system can successfully reproduce the response of a detector with such a small active area.

Detection of the spin injection into silicon by broadband ferromagnetic resonance spectroscopy

NASA Astrophysics Data System (ADS)

Ohshima, Ryo; Dushenko, Sergey; Ando, Yuichiro; Weiler, Mathias; Klingler, Stefan; Huebl, Hans; Shinjo, Teruya; Goennenwein, Sebastian; Shiraishi, Masashi

Silicon (Si) based spintronics was eagerly studied to realize spin metal-oxide-semiconductor field-effect-transistors (MOSFETs) since it has long spin lifetime and gate tunability. The operation of n-type Si spin MOSFET was successfully demonstrated, however, their resistivity is still too low for practical applications and a systematic study of spin injection properties (such as spin lifetime, spin injection efficiency and so on) from the ferromagnet into the Si with different resistivity is awaited for further progress in Si spintronics. In this study, we show the spin injection by spin pumping technique in the NiFe(Py)/Si system. Broadband FMR measurement was carried out to see the enhancement of the Gilbert damping parameter with different resistivity of the Si channel. Additional damping indicated the successful spin injection by spin pumping and observed even for the Si channel with high resistivity, which is necessary for the gate operation of the device.

EDMOS in ultrathin FDSOI: Impact of the drift region properties

NASA Astrophysics Data System (ADS)

Litty, Antoine; Ortolland, Sylvie; Golanski, Dominique; Dutto, Christian; Cristoloveanu, Sorin

2016-11-01

The development of high-voltage MOSFET (HVMOS) is necessary for including power management or radiofrequency functionalities in CMOS technology. In this paper, we investigate the fabrication and optimization of an Extended Drain MOSFET (EDMOS) directly integrated in the ultra-thin SOI film (7 nm) of the 28 nm FDSOI CMOS technology node. Thanks to TCAD simulations, we analyse in detail the device behaviour as a function of the doping level and length of the drift region. The influence of the back-plane doping type and of the back-biasing schemes is discussed. DC measurements of fabricated EDMOS samples reveal promising performances in particular in terms of specific on-resistance versus breakdown voltage trade-off. The experimental results indicate that, even in an ultrathin film, the engineering of the drift region could be a lever to obtain integrated HVMOS (3.3-5 V).

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

High-voltage, high-power, solid-state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

NASA Astrophysics Data System (ADS)

Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

2018-02-01

Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

Extraction method of interfacial injected charges for SiC power MOSFETs

NASA Astrophysics Data System (ADS)

Wei, Jiaxing; Liu, Siyang; Li, Sheng; Song, Haiyang; Chen, Xin; Li, Ting; Fang, Jiong; Sun, Weifeng

2018-01-01

An improved novel extraction method which can characterize the injected charges along the gate oxide interface for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. According to the different interface situations of the channel region and the junction FET (JFET) region, the gate capacitance versus gate voltage (Cg-Vg) curve of the device can be divided into three relatively independent parts, through which the locations and the types of the charges injected in to the oxide above the interface can be distinguished. Moreover, the densities of these charges can also be calculated by the amplitudes of the shifts in the Cg-Vg curve. The correctness of this method is proved by TCAD simulations. Moreover, experiments on devices stressed by unclamped-inductive-switching (UIS) stress and negative bias temperature stress (NBTS) are performed to verify the validity of this method.

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawarada, H., E-mail: kawarada@waseda.jp; Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555; Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051

2014-07-07

By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-Hmore » surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.« less

Multi-objective optimization of MOSFETs channel widths and supply voltage in the proposed dual edge-triggered static D flip-flop with minimum average power and delay by using fuzzy non-dominated sorting genetic algorithm-II.

PubMed

Keivanian, Farshid; Mehrshad, Nasser; Bijari, Abolfazl

2016-01-01

D Flip-Flop as a digital circuit can be used as a timing element in many sophisticated circuits. Therefore the optimum performance with the lowest power consumption and acceptable delay time will be critical issue in electronics circuits. The newly proposed Dual-Edge Triggered Static D Flip-Flop circuit layout is defined as a multi-objective optimization problem. For this, an optimum fuzzy inference system with fuzzy rules is proposed to enhance the performance and convergence of non-dominated sorting Genetic Algorithm-II by adaptive control of the exploration and exploitation parameters. By using proposed Fuzzy NSGA-II algorithm, the more optimum values for MOSFET channel widths and power supply are discovered in search space than ordinary NSGA types. What is more, the design parameters involving NMOS and PMOS channel widths and power supply voltage and the performance parameters including average power consumption and propagation delay time are linked. To do this, the required mathematical backgrounds are presented in this study. The optimum values for the design parameters of MOSFETs channel widths and power supply are discovered. Based on them the power delay product quantity (PDP) is 6.32 PJ at 125 MHz Clock Frequency, L = 0.18 µm, and T = 27 °C.

Estimating effective dose to pediatric patients undergoing interventional radiology procedures using anthropomorphic phantoms and MOSFET dosimeters.

PubMed

Miksys, Nelson; Gordon, Christopher L; Thomas, Karen; Connolly, Bairbre L

2010-05-01

The purpose of this study was to estimate the effective doses received by pediatric patients during interventional radiology procedures and to present those doses in "look-up tables" standardized according to minute of fluoroscopy and frame of digital subtraction angiography (DSA). Organ doses were measured with metal oxide semiconductor field effect transistor (MOSFET) dosimeters inserted within three anthropomorphic phantoms, representing children at ages 1, 5, and 10 years, at locations corresponding to radiosensitive organs. The phantoms were exposed to mock interventional radiology procedures of the head, chest, and abdomen using posteroanterior and lateral geometries, varying magnification, and fluoroscopy or DSA exposures. Effective doses were calculated from organ doses recorded by the MOSFET dosimeters and are presented in look-up tables according to the different age groups. The largest effective dose burden for fluoroscopy was recorded for posteroanterior and lateral abdominal procedures (0.2-1.1 mSv/min of fluoroscopy), whereas procedures of the head resulted in the lowest effective doses (0.02-0.08 mSv/min of fluoroscopy). DSA exposures of the abdomen imparted higher doses (0.02-0.07 mSv/DSA frame) than did those involving the head and chest. Patient doses during interventional procedures vary significantly depending on the type of procedure. User-friendly look-up tables may provide a helpful tool for health care providers in estimating effective doses for an individual procedure.

Intermodulation distortion and linearity performance assessment of 50-nm gate length L-DUMGAC MOSFET for RFIC design

NASA Astrophysics Data System (ADS)

Chaujar, Rishu; Kaur, Ravneet; Saxena, Manoj; Gupta, Mridula; Gupta, R. S.

2008-08-01

The distortion and linearity behaviour of MOSFETs is imperative for low-noise applications and RFICs design. In this paper, an extensive study on the RF-distortion and linearity behaviour of Laterally Amalgamated DUal Material GAte Concave (L-DUMGAC) MOSFET is performed and the influence of technology variations such as gate length, negative junction depth (NJD), substrate bias, drain bias and gate material workfunction is explored using ATLAS device simulator. Simulation results reveal that L-DUMGAC MOSFET significantly enhances the linearity and intermodulation distortion performance in terms of figure of merit (FOM) metrics: V, V, IIP3, IMD3 and higher order transconductance coefficients: gm1, gm2, gm3, proving its efficacy for RFIC design. The work, thus, optimize the device's bias point for RFICs with higher efficiency and better linearity performance.

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

2018-01-01

We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

A novel double gate MOSFET by symmetrical insulator packets with improved short channel effects

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-03-01

In this article, we study a novel double-gate SOI MOSFET structure incorporating insulator packets (IPs) at the junction between channel and source/drain (S/D) ends. The proposed MOSFET has great strength in inhibiting short channel effects and OFF-state current that are the main problems compared with conventional one due to the significant suppressed penetrations of both the lateral electric field and the carrier diffusion from the S/D into the channel. Improvement of the hot electron reliability, the ON to OFF drain current ratio, drain-induced barrier lowering, gate-induced drain leakage and threshold voltage over conventional double-gate SOI MOSFETs, i.e. without IPs, is displayed with the simulation results. This study is believed to improve the CMOS device reliability and is suitable for the low-power very-large-scale integration circuits.

Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

NASA Astrophysics Data System (ADS)

Xin, Wan; Weisong, Zhou; Daoguang, Liu; Hanliang, Bo; Jun, Xu

2015-05-01

It was demonstrated that heavy ions can induce large current—voltage (I-V) characteristics shift in commercial trench power MOSFETs, named single event microdose effect (SE-microdose effect). A model is presented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO2/Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET's I-V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment's data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.

CMOS Image Sensor Using SOI-MOS/Photodiode Composite Photodetector Device

NASA Astrophysics Data System (ADS)

Uryu, Yuko; Asano, Tanemasa

2002-04-01

A new photodetector device composed of a lateral junction photodiode and a metal-oxide-semiconductor field-effect-transistor (MOSFET), in which the output of the diode is fed through the body of the MOSFET, has been investigated. It is shown that the silicon-on-insulator (SOI)-MOSFET amplifies the junction photodiode current due to the lateral bipolar action. It is also shown that the presence of the electrically floating gate enhances the current amplification factor of the SOI-MOSFET. The output current of this composite device linearly responds by four orders of illumination intensity. As an application of the composite device, a complementary-metal-oxide-semiconductor (CMOS) line sensor incorporating the composite device is fabricated and its operation is demonstrated. The output signal of the line sensor using the composite device was two times larger than that using the lateral photodiode.

A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

NASA Astrophysics Data System (ADS)

Priya, Anjali; Mishra, Ram Awadh

2016-04-01

In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.

An EKV-based high voltage MOSFET model with improved mobility and drift model

NASA Astrophysics Data System (ADS)

Chauhan, Yogesh Singh; Gillon, Renaud; Bakeroot, Benoit; Krummenacher, Francois; Declercq, Michel; Ionescu, Adrian Mihai

2007-11-01

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270-3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11-12):1801-13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11-12):1801-13] especially in the quasi-saturation region of output characteristics.

Performance characteristics of mobile MOSFET dosimeter for kilovoltage X-rays used in image guided radiotherapy.

PubMed

Kumar, A Sathish; Singh, I Rabi Raja; Sharma, S D; Ravindran, B Paul

2015-01-01

The main objective of this study was to investigate the characteristics of metal oxide semiconductor field effect transistor (MOSFET) dosimeter for kilovoltage (kV) X-ray beams in order to perform the in vivo dosimetry during image guidance in radiotherapy. The performance characteristics of high sensitivity MOSFET dosimeters were investigated for 80, 90, 100, 110, 120, and 125 kV X-ray beams used for imaging in radiotherapy. This study was performed using Clinac 2100 C/D medical electron linear accelerator with on-board imaging and kV cone beam computed tomography system. The characteristics studied in this work include energy dependence, angular dependence, and linearity. The X-ray beam outputs were measured as per American Association of Physicists in Medicine (AAPM) TG 61 recommendations using PTW parallel plate (PP) ionization chamber, which was calibrated in terms of air kerma (Nk) by the National Standard Laboratory. The MOSFET dosimeters were calibrated against the PP ionization chamber for all the kV X-ray beams and the calibration coefficient was found to be 0.11 cGy/mV with a standard deviation of about ±1%. The response of MOSFET was found to be energy independent for the kV X-ray energies used in this study. The response of the MOSFET dosimeter was also found independent of angle of incidence for the gantry angles in the range of 0° to 360° in-air as well as at 3 cm depth in tissue equivalent phantom.

In vivo dosimetry using a linear Mosfet-array dosimeter to determine the urethra dose in 125I permanent prostate implants.

PubMed

Bloemen-van Gurp, Esther J; Murrer, Lars H P; Haanstra, Björk K C; van Gils, Francis C J M; Dekker, Andre L A J; Mijnheer, Ben J; Lambin, Philippe

2009-01-01

In vivo dosimetry during brachytherapy of the prostate with (125)I seeds is challenging because of the high dose gradients and low photon energies involved. We present the results of a study using metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to evaluate the dose in the urethra after a permanent prostate implantation procedure. Phantom measurements were made to validate the measurement technique, determine the measurement accuracy, and define action levels for clinical measurements. Patient measurements were performed with a MOSFET array in the urinary catheter immediately after the implantation procedure. A CT scan was performed, and dose values, calculated by the treatment planning system, were compared to in vivo dose values measured with MOSFET dosimeters. Corrections for temperature dependence of the MOSFET array response and photon attenuation in the catheter on the in vivo dose values are necessary. The overall uncertainty in the measurement procedure, determined in a simulation experiment, is 8.0% (1 SD). In vivo dose values were obtained for 17 patients. In the high-dose region (> 100 Gy), calculated and measured dose values agreed within 1.7% +/- 10.7% (1 SD). In the low-dose region outside the prostate (< 100 Gy), larger deviations occurred. MOSFET detectors are suitable for in vivo dosimetry during (125)I brachytherapy of prostate cancer. An action level of +/- 16% (2 SD) for detection of errors in the implantation procedure is achievable after validation of the detector system and measurement conditions.

Transient pulse analysis of ionized electronics exposed to γ-radiation generated from a relativistic electron beam

NASA Astrophysics Data System (ADS)

Min, Sun-Hong; Kwon, Ohjoon; Sattorov, Matlabjon; Baek, In-Keun; Kim, Seontae; Hong, Dongpyo; Jeong, Jin-Young; Jang, Jungmin; Bera, Anirban; Barik, Ranjan Kumar; Bhattacharya, Ranajoy; Cho, Ilsung; Kim, Byungsu; Park, Chawon; Jung, Wongyun; Park, Seunghyuk; Park, Gun-Sik

2018-02-01

When a semiconductor element is irradiated with radiation in the form of a transient pulse emitted from a nuclear explosion, a large amount of charge is generated in a short time in the device. A photocurrent amplified in a certain direction by these types of charges cause the device to break down and malfunction or in extreme cases causes them to burn out. In this study, a pulse-type γ-ray generator based on a relativistic electron beam accelerator (γ=2.2, β=0.89) which functions by means of tungsten impingement was constructed and tested in an effort to investigate the process and effects of the photocurrent formed by electron hole pairs (EHP) generated in a pMOSFET device when a transient radiation pulse is incident in the device. The pulse-type γ-ray irradiating device used here to generate the electron beam current in a short time was devised to allow an increase in the irradiation dose. A precise signal processing circuit was constructed to measure the photocurrent of the small signal generated by the pMOSFET due to the electron beam accelerator pulse signal from the large noise stemming from the electromagnetic field around the relativistic electron beam accelerator. The pulse-type γ-ray generator was installed to meet the requirements of relativistic electron beam accelerators, and beam irradiation was conducted after a beam commissioning step.

Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices

NASA Astrophysics Data System (ADS)

Baykan, Mehmet Onur

Strained silicon technology is a well established method to enhance sub-100nm MOSFET performance. With the scalability of process-induced strain, strained silicon channels have been used in every advanced CMOS technology since the 90nm node. At the 22nm node, due to the detrimental short channel effects, non-planar silicon CMOS has emerged as a viable solution to sustain transistor scaling without compromising the device performance. Therefore, it is necessary to conduct a physics based investigation of the effects of mechanical strain in silicon MOS device performance enhancement, as the transverse and longitudinal device dimensions scale down for future technology nodes. While silicon is widely used as the material basis for logic transistors, AlGaN/GaN HEMTs promise a superior device platform over silicon based power MOSFETs for high-frequency and high-power applications. In contrast to the mature Si crystal growth technology, the abundance of defects in the GaN material system creates obstacles for the realization of a reliable AlGaN/GaN HEMT device technology. Due to the high levels of internal mechanical strain present in AlGaN/GaN HEMTs, it is of utmost importance to understand the impact of mechanical stress on AlGaN/GaN trap generation. First, we have investigated the underlying physics of the comparable electron mobility observed in (100) and (110) sidewall silicon double-gate FinFETs, which is different from the observed planar (100) and (110) electron mobility. By conducting a systematic experimental study, it is shown that the undoped body, metal gate induced stress, and volume-inversion effects do not explain the comparable electron mobility. Using a self-consistent double-gate FinFET simulator, we have showed that for (110) FinFETs, an increased population of electrons is obtained for the Delta2 valley due to the heavy nonparabolic confinement mass, leading to a comparable average electron transport effective mass for both orientations. The width dependent strain response of tri-gate p-type FinFETs are experimentally extracted using a 4-point bending jig. It is found that the low-field piezoresistance coefficient of p-type FinFETs can be modeled by using a weighted conductance average of the top and sidewall bulk piezoresistance coefficients. Next, the strain enhancement of p-type ballistic silicon nanowire MOSFETs is studied using sp3d 5s* basis nearest-neighbor tight-binding simulations coupled with a semiclassical top-of-the-barrier transport model. Size and orientation dependent strain enhancement of ballistic hole transport is explained by the strain-induced modification of the 1D nanowire valence band density-of-states. Further insights are provided for future p-type high-performance silicon nanowire logic devices. A physics based investigation is conducted to understand the strain effects on surface roughness limited electron mobility in silicon inversion layers. Based on the evidence from electrical and material characterization, a strain-induced surface morphology change is hypothesized. To model the observed electrical characteristics, we have employed a self-consistent MOSFET mobility simulator coupled with an ad hoc strain-induced roughness modification. The strain induced surface morphology change is found to be consistent among electrical and materials characterization, as well as transport simulations. In order to bridge the gap between the drift-diffusion based models for long-channel devices and the quasi-ballistic models for nanoscale channels, a unified carrier transport model is developed using an updated one-flux theory. Including the high-field and carrier confinement effects, a surface-potential based analytical transmission expression is obtained for the entire MOSFET operation range. With the new channel transmission equation and average carrier drift velocity, a new expression for channel ballisticity is defined. Impact of mechanical strain on carrier transport for both nMOSFETs and pMOSFETs in both linear and saturation regimes is explained using the new channel transmission definitions. To understand the impact of mechanical strain on AlGaN/GaN HEMT trap generation, we have devised an experimental method to obtain the photon flux-normalized relative areal trap density distribution using photoionization spectroscopy technique. The details of the trap extraction method and the experimental setup are given. Using this setup, the trap characteristics are extracted for both ungated transmission line module (TLM) and gated HEMT devices from both Si and SiC substrates. The changes in the device trap characteristics are emphasized before and after electrical stressing. It is found through the step-voltage stressing of the AlGaN/GaN HEMT gate stack that the device degradation is due to the near bandgap trap generation, which are shown to be related to the structural defects in GaN.

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

NASA Astrophysics Data System (ADS)

Kumar, Manoj; Pratap, Yogesh; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2017-12-01

In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported, to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions. This novel structure offers low barrier height at the source and offers high ON-state current. The I ON/I OFF of ISE-CGAA-SB-MOSFET increases by 1177 times and offers steeper subthreshold slope (~60 mV/decade). However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate, dual metal gate, single metal gate with ISE, and dual metal gate with ISE has been presented. The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design. The numerical simulation is performed using the ATLAS-3D device simulator.

A new radiotherapy surface dose detector:the MOSFET.

PubMed

Butson, M J; Rozenfeld, A; Mathur, J N; Carolan, M; Wong, T P; Metcalfe, P E

1996-05-01

Radiotherapy x-ray and electron beam surface doses are accurately measurable by use of a MOS-FET detector system. The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is approximately 200-microns in diameter and consists of a 0.5-microns Al electrode on top of a 1-microns SiO2 and 300-microns Si substrate. Results for % surface dose were within +/- 2% compared to the Attix chamber and within +/- 3% of TLD extrapolation results for normally incident beams. Detectors were compared using different energies, field size, and beam modifying devices such as block trays and wedges. Percentage surface dose for 10 x 10-cm and 40 x 40-cm field size for 6-MV x rays at 100-cm SSD using the MOSFET were 16% and 42% of maximum, respectively. Factors such as its small size, immediate retrieval of results, high accuracy attainable from low applied doses, and as the MOSFET records its dose history make it a suitable in vivo dosimeter where surface and skin doses need to be determined. This can be achieved within part of the first fraction of dose (i.e., only 10 cGy is required.)

Energy dependence corrections to MOSFET dosimetric sensitivity.

PubMed

Cheung, T; Butson, M J; Yu, P K N

2009-03-01

Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) are dosimeters which are now frequently utilized in radiotherapy treatment applications. An improved MOSFET, clinical semiconductor dosimetry system (CSDS) which utilizes improved packaging for the MOSFET device has been studied for energy dependence of sensitivity to x-ray radiation measurement. Energy dependence from 50 kVp to 10 MV x-rays has been studied and found to vary by up to a factor of 3.2 with 75 kVp producing the highest sensitivity response. The detectors average life span in high sensitivity mode is energy related and ranges from approximately 100 Gy for 75 kVp x-rays to approximately 300 Gy at 6 MV x-ray energy. The MOSFET detector has also been studied for sensitivity variations with integrated dose history. It was found to become less sensitive to radiation with age and the magnitude of this effect is dependant on radiation energy with lower energies producing a larger sensitivity reduction with integrated dose. The reduction in sensitivity is however approximated reproducibly by a slightly non linear, second order polynomial function allowing corrections to be made to readings to account for this effect to provide more accurate dose assessments both in phantom and in-vivo.

MOSFET-BJT hybrid mode of the gated lateral bipolar junction transistor for C-reactive protein detection.

PubMed

Yuan, Heng; Kwon, Hyurk-Choon; Yeom, Se-Hyuk; Kwon, Dae-Hyuk; Kang, Shin-Won

2011-10-15

In this study, we propose a novel biosensor based on a gated lateral bipolar junction transistor (BJT) for biomaterial detection. The gated lateral BJT can function as both a BJT and a metal-oxide-semiconductor field-effect transistor (MOSFET) with both the emitter and source, and the collector and drain, coupled. C-reactive protein (CRP), which is an important disease marker in clinical examinations, can be detected using the proposed device. In the MOSFET-BJT hybrid mode, the sensitivity, selectivity, and reproducibility of the gated lateral BJT for biosensors were evaluated in this study. According to the results, in the MOSFET-BJT hybrid mode, the gated lateral BJT shows good selectivity and reproducibility. Changes in the emitter (source) current of the device for CRP antigen detection were approximately 0.65, 0.72, and 0.80 μA/decade at base currents of -50, -30, and -10 μA, respectively. The proposed device has significant application in the detection of certain biomaterials that require a dilution process using a common biosensor, such as a MOSFET-based biosensor. Copyright © 2011 Elsevier B.V. All rights reserved.

New design of a passive type RADFET reader for enhanced sensitivity

NASA Astrophysics Data System (ADS)

Lee, Dae-Hee

2016-07-01

We present a new design of a passive type RADFET reader with enhanced radiation sensitivity. Using a electostatic plate, we have applied a static electric field to the gate voltage, which impacts a positive biasing on the p-type MOSFET. The resultant effect shows that 1.8 times of radiation sensitivity increased when we measured the threshold voltage shift of the RADFET exposed to 30 krad irradiation. We discuss further about the characteristic changes of a RADFET according to the positive biasing on the gate voltage.

Lateral power MOSFETs in silicon carbide

NASA Astrophysics Data System (ADS)

Spitz, Jan

2001-07-01

Because of its large bandgap, its high critical electric field, and its high quality native SiO2, silicon carbide is considered to be the material of choice for power switching electronics in the future. Until 1997 the maximum thickness of commercially available epilayers serving as the drift region for power devices has been limited to 10--15 mum, limiting the maximum blocking voltage to 1500 V for vertical power devices in silicon carbide. In this study, we present the first lateral power devices on a semi-insulating vanadium doped substrate of silicon carbide. The first generation of lateral DMOSFETs in 4H-SiC yielded a blocking voltage of 2.6 kV---more than twice what was previously reported for any SiC MOSFETs---but suffered from low MOS channel mobility caused by the high anneal temperatures (≥1600°C) required to activate the p-type ion-implant. Combining the high blocking-voltage of the vanadium-doped substrate with the higher MOS mobility previously achieved by an epitaxially-grown accumulation channel leads us to the LACCUFET device: No p-type implant is necessary. This device shows a blocking voltage of 2.7 kV unmatched by any SiC transistor until February 2000 combined with a much lower specific on-resistance of 3.6 O•cm2. The ability to combine long-channel test MOSFETs with high channel mobility of 27 cm2/(volt·sec) in 4H-SiC with power devices of 13 cm2/(volt·sec) on the same chip has been demonstrated. The Figure of Merit Vblock 2/Ron,sp for this new NON-RESURF LDMOSFET in 4H-SiC is close to the theoretical limit for vertical power devices made of silicon. The specific on-resistance can be reduced by factor 2.5 by forward-biasing the p-base to source junction by 2 to 3 volts. Basic operation in Static Induction Injection Accumulation FET (SIAFET) mode has been demonstrated. Lateral (Non-Punch-Through) Insulated Gate Bipolar Transistors (LIGBT) have been presented for the first time showing similar on-resistance and blocking voltages but significantly higher on-currents for both 4H and 6H-SiC devices compared to their MOSFET counterparts. Test p-i-n diodes show lower on-resistance by carrier injection into the drift region.

Observations of Single Event Failure in Power MOSFETS

NASA Technical Reports Server (NTRS)

Nichols, D.; McCarty, K.; Coss, J.

1994-01-01

The first compendium of single event test data for power MOSFETs provides failure thresholds from burnout or gate rupture for over 100 devices of eight manufacturers. Ordering the data has also provided some useful insights.

Recent Radiation Test Results for Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Topper, Alyson D.; Casey, Megan C.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak S.; LaBel, Kenneth A.

2013-01-01

Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various hardened and commercial power metal-oxide-semiconductor field effect transistors (MOSFETs), including vertical planar, trench, superjunction, and lateral process designs.

Methods of and apparatus for radiation measurement, and specifically for in vivo radiation measurement

DOEpatents

Huffman, D.D.; Hughes, R.C.; Kelsey, C.A.; Lane, R.; Ricco, A.J.; Snelling, J.B.; Zipperian, T.E.

1986-08-29

Methods of and apparatus for in vivo radiation measurements rely on a MOSFET dosimeter of high radiation sensitivity which operates in both the passive mode to provide an integrated dose detector and active mode to provide an irradiation rate detector. A compensating circuit with a matched unirradiated MOSFET is provided to operate at a current designed to eliminate temperature dependence of the device. Preferably, the MOSFET is rigidly mounted in the end of a miniature catheter and the catheter is implanted in the patient proximate the radiation source.

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ericson, N; Frank, S; Britton, C

2014-02-01

A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into anmore » isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.« less

Cryogenic measurements of aerojet GaAs n-JFETs

NASA Technical Reports Server (NTRS)

Goebel, John H.; Weber, Theodore T.

1993-01-01

The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

SU-G-IeP3-04: Effective Dose Measurements in Fast Kvp Switch Dual Energy Computed Tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raudabaugh, J; Moore, B; Nguyen, G

2016-06-15

Purpose: The objective of this study was two-fold: (a) to test a new approach to approximating organ dose by using the effective energy of the combined 80kV/140kV beam in dual-energy (DE) computed tomography (CT), and (b) to derive the effective dose (ED) in the abdomen-pelvis protocol in DECT. Methods: A commercial dual energy CT scanner was employed using a fast-kV switch abdomen/pelvis protocol alternating between 80 kV and 140 kV. MOSFET detectors were used for organ dose measurements. First, an experimental validation of the dose equivalency between MOSFET and ion chamber (as a gold standard) was performed using a CTDImore » phantom. Second, the ED of DECT scans was measured using MOSFET detectors and an anthropomorphic phantom. For ED calculations, an abdomen/pelvis scan was used using ICRP 103 tissue weighting factors; ED was also computed using the AAPM Dose Length Product (DLP) method and compared to the MOSFET value. Results: The effective energy was determined as 42.9 kV under the combined beam from half-value layer (HVL) measurement. ED for the dual-energy scan was calculated as 16.49 ± 0.04 mSv by the MOSFET method and 14.62 mSv by the DLP method. Conclusion: Tissue dose in the center of the CTDI body phantom was 1.71 ± 0.01 cGy (ion chamber) and 1.71 ± 0.06 (MOSFET) respectively; this validated the use of effective energy method for organ dose estimation. ED from the abdomen-pelvis scan was calculated as 16.49 ± 0.04 mSv by MOSFET and 14.62 mSv by the DLP method; this suggests that the DLP method provides a reasonable approximation to the ED.« less

SU-F-T-328: Real-Time in Vivo Dosimetry of Prostate SBRT Boost Treatments Using MOSkin Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Legge, K; O’Connor, D J; Cutajar, D

Purpose: To provide in vivo measurements of dose to the anterior rectal wall during prostate SBRT boost treatments using MOSFET detectors. Methods: Dual MOSkin detectors were attached to a Rectafix rectal sparing device and inserted into patients during SBRT boost treatments. Patients received two boost fractions, each of 9.5–10 Gy and delivered using 2 VMAT arcs. Measurements were acquired for 12 patients. MOSFET voltages were read out at 1 Hz during delivery and converted to dose. MV images were acquired at known frequency during treatment so that the position of the gantry at each point in time was known. Themore » cumulative dose at the MOSFET location was extracted from the treatment planning system at in 5.2° increments (FF beams) or at 5 points during each delivered arc (FFF beams). The MOSFET dose and planning system dose throughout the entirety of each arc were then compared using root mean square error normalised to the final planned dose for each arc. Results: The average difference between MOSFET measured and planning system doses determined over the entire course of treatment was 9.7% with a standard deviation of 3.6%. MOSFETs measured below the planned dose in 66% of arcs measured. Uncertainty in the position of the MOSFET detector and verification point are major sources of discrepancy, as the detector is placed in a high dose gradient region during treatment. Conclusion: MOSkin detectors were able to provide real time in vivo measurements of anterior rectal wall dose during prostate SBRT boost treatments. This method could be used to verify Rectafix positioning and treatment delivery. Further developments could enable this method to be used during high dose treatments to monitor dose to the rectal wall to ensure it remains at safe levels. Funding has been provided by the University of Newcastle. Kimberley Legge is the recipient of an Australian Postgraduate Award.« less

Development of an applicator for eye lens dosimetry during radiotherapy

PubMed Central

Park, J M; Lee, J; Ye, S-J

2014-01-01

Objective: To develop an applicator for in vivo measurements of lens dose during radiotherapy. Methods: A contact lens-shaped applicator made of acrylic was developed for in vivo measurements of lens dose. This lens applicator allows the insertion of commercially available metal oxide semiconductor field effect transistors (MOSFETs) dosemeters. CT images of an anthropomorphic phantom with and without the applicator were acquired. Ten volumetric modulated arc therapy plans each for the brain and the head and neck cancer were generated and delivered to an anthropomorphic phantom. The differences between the measured and the calculated doses at the lens applicator, as well as the differences between the measured and the calculated doses at the surface of the eyelid were acquired. Results: The average difference between the measured and the calculated doses with the applicator was 3.1 ± 1.8 cGy with a micro MOSFET and 2.8 ± 1.3 cGy with a standard MOSFET. The average difference without the lens applicator was 4.8 ± 5.2 cGy with the micro MOSFET and 5.7 ± 6.5 cGy with the standard MOSFET. The maximum difference with the micro MOSFET was 10.5 cGy with the applicator and 21.1 cGy without the applicator. For the standard MOSFET, it was 6.8 cGy with the applicator and 27.6 cGy without the applicator. Conclusion: The lens applicator allowed reduction of the differences between the calculated and the measured doses during in vivo measurement for the lens compared with in vivo measurement at the surface of the eyelid. Advances in knowledge: By using an applicator for in vivo dosimetry of the eye lens, it was possible to reduce the measurement uncertainty. PMID:25111733

Materials Science and Device Physics of 2-Dimensional Semiconductors

NASA Astrophysics Data System (ADS)

Fang, Hui

Materials and device innovations are the keys to future technology revolution. For MOSFET scaling in particular, semiconductors with ultra-thin thickness on insulator platform is currently of great interest, due to the potential of integrating excellent channel materials with the industrially mature Si processing. Meanwhile, ultra-thin thickness also induces strong quantum confinement which in turn affect most of the material properties of these 2-dimensional (2-D) semiconductors, providing unprecedented opportunities for emerging technologies. In this thesis, multiple novel 2-D material systems are explored. Chapter one introduces the present challenges faced by MOSFET scaling. Chapter two covers the integration of ultrathin III V membranes with Si. Free standing ultrathin III-V is studied to enable high performance III-V on Si MOSFETs with strain engineering and alloying. Chapter three studies the light absorption in 2-D membranes. Experimental results and theoretical analysis reveal that light absorption in the 2-D quantum membranes is quantized into a fundamental physical constant, where we call it the quantum unit of light absorption, irrelevant of most of the material dependent parameters. Chapter four starts to focus on another 2-D system, atomic thin layered chalcogenides. Single and few layered chalcogenides are first explored as channel materials, with focuses in engineering the contacts for high performance MOSFETs. Contact treatment by molecular doping methods reveals that many layered chalcogenides other than MoS2 exhibit good transport properties at single layer limit. Finally, Chapter five investigated 2-D van der Waals heterostructures built from different single layer chalcogenides. The investigation in a WSe2/MoS2 hetero-bilayer shows a large Stokes like shift between photoluminescence peak and lowest absorption peak, as well as strong photoluminescence intensity, consistent with spatially indirect transition in a type II band alignment in this van der Waals heterostructure. This result enables new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers and highlights the ability to build van der Waals semiconductor heterostructure lasers/LEDs.

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

NASA Astrophysics Data System (ADS)

Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

2018-05-01

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

An analytical drain current model for symmetric double-gate MOSFETs

NASA Astrophysics Data System (ADS)

Yu, Fei; Huang, Gongyi; Lin, Wei; Xu, Chuanzhong

2018-04-01

An analytical surface-potential-based drain current model of symmetric double-gate (sDG) MOSFETs is described as a SPICE compatible model in this paper. The continuous surface and central potentials from the accumulation to the strong inversion regions are solved from the 1-D Poisson's equation in sDG MOSFETs. Furthermore, the drain current is derived from the charge sheet model as a function of the surface potential. Over a wide range of terminal voltages, doping concentrations, and device geometries, the surface potential calculation scheme and drain current model are verified by solving the 1-D Poisson's equation based on the least square method and using the Silvaco Atlas simulation results and experimental data, respectively. Such a model can be adopted as a useful platform to develop the circuit simulator and provide the clear understanding of sDG MOSFET device physics.

Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishi, K., E-mail: nishi@mosfet.t.u-tokyo.ac.jp; Takenaka, M.; Takagi, S.

2014-12-08

We demonstrate the operation of GaSb p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on (111)A surfaces with Al{sub 2}O{sub 3} gate dielectrics formed by atomic-layer deposition at 150 °C. The p-MOSFETs on (111)A surfaces exhibit higher drain current and lower subthreshold swing than those on (100) surfaces. We find that the interface-state density (D{sub it}) values at the Al{sub 2}O{sub 3}/GaSb MOS interfaces on the (111)A surfaces are lower than those on the (100) surfaces, which can lead to performance enhancement of the GaSb p-MOSFETs on (111)A surfaces. The mobility of the GaSb p-MOSFETs on (111)A surfaces is 80% higher than that onmore » (100) surfaces.« less

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.

PubMed

Tan, Michael Loong Peng; Lentaris, Georgios; Amaratunga Aj, Gehan

2012-08-19

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

PubMed

Egard, M; Johansson, S; Johansson, A-C; Persson, K-M; Dey, A W; Borg, B M; Thelander, C; Wernersson, L-E; Lind, E

2010-03-10

In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.

Total body irradiation, toward optimal individual delivery: dose evaluation with metal oxide field effect transistors, thermoluminescence detectors, and a treatment planning system.

PubMed

Bloemen-van Gurp, Esther J; Mijnheer, Ben J; Verschueren, Tom A M; Lambin, Philippe

2007-11-15

To predict the three-dimensional dose distribution of our total body irradiation technique, using a commercial treatment planning system (TPS). In vivo dosimetry, using metal oxide field effect transistors (MOSFETs) and thermoluminescence detectors (TLDs), was used to verify the calculated dose distributions. A total body computed tomography scan was performed and loaded into our TPS, and a three-dimensional-dose distribution was generated. In vivo dosimetry was performed at five locations on the patient. Entrance and exit dose values were converted to midline doses using conversion factors, previously determined with phantom measurements. The TPS-predicted dose values were compared with the MOSFET and TLD in vivo dose values. The MOSFET and TLD dose values agreed within 3.0% and the MOSFET and TPS data within 0.5%. The convolution algorithm of the TPS, which is routinely applied in the clinic, overestimated the dose in the lung region. Using a superposition algorithm reduced the calculated lung dose by approximately 3%. The dose inhomogeneity, as predicted by the TPS, can be reduced using a simple intensity-modulated radiotherapy technique. The use of a TPS to calculate the dose distributions in individual patients during total body irradiation is strongly recommended. Using a TPS gives good insight of the over- and underdosage in a patient and the influence of patient positioning on dose homogeneity. MOSFETs are suitable for in vivo dosimetry purposes during total body irradiation, when using appropriate conversion factors. The MOSFET, TLD, and TPS results agreed within acceptable margins.

Integrated Silicon Carbide Power Electronic Block

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radhakrishnan, Rahul

2017-11-07

Research involved in this project is aimed at monolithically integrating an anti-parallel diode to the SiC MOSFET switch, so as to avoid having to use an external anti-parallel diode in power circuit applications. SiC MOSFETs are replacing Si MOSFETs and IGBTs in many applications, yet the high bandgap of the body diode in SiC MOSFET and consequent need for an external anti-parallel diode increases costs and discourages circuit designers from adopting this technology. Successful demonstration and subsequent commercialization of this technology would reduce SiC MOSFET cost and additionally reduce component count as well as other costs at the power circuitmore » level. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas, demonstrated unit-processes for device fabrication in short loops and started full flow device fabrication. Key findings of the development activity were: The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome; and The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. Given sufficient time for additional development it is likely that processes could be tuned to realize the monolithically integrated SiC JBS diode and MOSFET. Sufficient funds were not available in this program to resolve processing difficulties and fabricate the devices.« less

Performance characteristics of mobile MOSFET dosimeter for kilovoltage X-rays used in image guided radiotherapy

PubMed Central

Kumar, A. Sathish; Singh, I. Rabi Raja; Sharma, S. D.; Ravindran, B. Paul

2015-01-01

The main objective of this study was to investigate the characteristics of metal oxide semiconductor field effect transistor (MOSFET) dosimeter for kilovoltage (kV) X-ray beams in order to perform the in vivo dosimetry during image guidance in radiotherapy. The performance characteristics of high sensitivity MOSFET dosimeters were investigated for 80, 90, 100, 110, 120, and 125 kV X-ray beams used for imaging in radiotherapy. This study was performed using Clinac 2100 C/D medical electron linear accelerator with on-board imaging and kV cone beam computed tomography system. The characteristics studied in this work include energy dependence, angular dependence, and linearity. The X-ray beam outputs were measured as per American Association of Physicists in Medicine (AAPM) TG 61 recommendations using PTW parallel plate (PP) ionization chamber, which was calibrated in terms of air kerma (Nk) by the National Standard Laboratory. The MOSFET dosimeters were calibrated against the PP ionization chamber for all the kV X-ray beams and the calibration coefficient was found to be 0.11 cGy/mV with a standard deviation of about ±1%. The response of MOSFET was found to be energy independent for the kV X-ray energies used in this study. The response of the MOSFET dosimeter was also found independent of angle of incidence for the gantry angles in the range of 0° to 360° in-air as well as at 3 cm depth in tissue equivalent phantom. PMID:26500397

Effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ganesh, K. C. P.; Nagesha, Y. N.; Umakanth, D.; Arora, S. K.; Siddappa, K.

The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (V-TH), the voltage shift due to interface trapped charge (DeltaV(Nit)), the voltage shift due to oxide trapped charge (DeltaV(Not)), the density of interface trapped charge (DeltaN(it)), the density of oxide trapped charge (DeltaN(ot) ) and the drain saturation current (I-D Sat) were studied as a function of fluence. Considerable increase in DeltaN(it) and DeltaN(ot) , and decrease in V-TH and I-D Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 degreesC.

Advanced p-MOSFET Ionizing-Radiation Dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Blaes, Brent R.

1994-01-01

Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.

Establishing a standard calibration methodology for MOSFET detectors in computed tomography dosimetry.

PubMed

Brady, S L; Kaufman, R A

2012-06-01

The use of metal-oxide-semiconductor field-effect transistor (MOSFET) detectors for patient dosimetry has increased by ~25% since 2005. Despite this increase, no standard calibration methodology has been identified nor calibration uncertainty quantified for the use of MOSFET dosimetry in CT. This work compares three MOSFET calibration methodologies proposed in the literature, and additionally investigates questions relating to optimal time for signal equilibration and exposure levels for maximum calibration precision. The calibration methodologies tested were (1) free in-air (FIA) with radiographic x-ray tube, (2) FIA with stationary CT x-ray tube, and (3) within scatter phantom with rotational CT x-ray tube. Each calibration was performed at absorbed dose levels of 10, 23, and 35 mGy. Times of 0 min or 5 min were investigated for signal equilibration before or after signal read out. Calibration precision was measured to be better than 5%-7%, 3%-5%, and 2%-4% for the 10, 23, and 35 mGy respective dose levels, and independent of calibration methodology. No correlation was demonstrated for precision and signal equilibration time when allowing 5 min before or after signal read out. Differences in average calibration coefficients were demonstrated between the FIA with CT calibration methodology 26.7 ± 1.1 mV cGy(-1) versus the CT scatter phantom 29.2 ± 1.0 mV cGy(-1) and FIA with x-ray 29.9 ± 1.1 mV cGy(-1) methodologies. A decrease in MOSFET sensitivity was seen at an average change in read out voltage of ~3000 mV. The best measured calibration precision was obtained by exposing the MOSFET detectors to 23 mGy. No signal equilibration time is necessary to improve calibration precision. A significant difference between calibration outcomes was demonstrated for FIA with CT compared to the other two methodologies. If the FIA with a CT calibration methodology was used to create calibration coefficients for the eventual use for phantom dosimetry, a measurement error ~12% will be reflected in the dosimetry results. The calibration process must emulate the eventual CT dosimetry process by matching or excluding scatter when calibrating the MOSFETs. Finally, the authors recommend that the MOSFETs are energy calibrated approximately every 2500-3000 mV. © 2012 American Association of Physicists in Medicine.

Burnout sensitivity of power MOSFETs operating in a switching converter

NASA Astrophysics Data System (ADS)

Tastet, P.; Garnier, J.; Constans, H.; Tizon, A. H.

1994-06-01

Heavy ion tests of a switching converter using power MOSFETs have allowed us to identify the main parameters which affect the burnout sensitivity of these components. The differences between static and dynamic conditions are clarified in this paper.

Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.

PubMed

Ma, R M; Peng, R M; Wen, X N; Dai, L; Liu, C; Sun, T; Xu, W J; Qin, G G

2010-10-01

We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Guo Xing; Hatchtel, Jordan; Shen, Xiao

Here, we investigate negative-bias temperature instabilities in SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics. The activation energies we measured for interface-trap charge buildup during negative-bias temperature stress were lower for SiGe channel pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si capping layers than for conventional Si channel pMOSFETs with SiO 2 gate dielectrics. Electron energy loss spectroscopy and scanning transmission electron microscopy images demonstrate that Ge atoms can diffuse from the SiGe layer into the Si capping layer, which is adjacent to the SiO 2/HfO 2 gate dielectric. Density functional calculations show that these Ge atoms reduce themore » strength of nearby Si-H bonds and that Ge-H bond energies are still lower, thereby reducing the activation energy for interface-trap generation for the SiGe devices. Moreover, activation energies for oxide-trap charge buildup during negative-bias temperature stress are similarly small for SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si pMOSFETs with SiO 2 gate dielectrics, suggesting that, in both cases, the oxide-trap charge buildup likely is rate-limited by hole tunneling into the near-interfacial SiO 2.« less

Practical issues regarding angular and energy response in in vivo intraoperative electron radiotherapy dosimetry.

PubMed

López-Tarjuelo, Juan; Bouché-Babiloni, Ana; Morillo-Macías, Virginia; Santos-Serra, Agustín; Ferrer-Albiach, Carlos

2017-01-01

To estimate angular response deviation of MOSFETs in the realm of intraoperative electron radiotherapy (IOERT), review their energy dependence, and propose unambiguous names for detector rotations. MOSFETs have been used in IOERT. Movement of the detector, namely rotations, can spoil results. We propose yaw, pitch, and roll to name the three possible rotations in space, as these unequivocally name aircraft rotations. Reinforced mobile MOSFETs (model TN-502RDM-H) and an Elekta Precise linear accelerator were used. Two detectors were placed in air for the angular response study and the whole set of five detectors was calibrated as usual to evaluate energy dependence. The maximum readout was obtained with a roll of 90° and 4 MeV. With regard to pitch movement, a substantial drop in readout was achieved at 90°. Significant overresponse was measured at 315° with 4 MeV and at 45° with 15 MeV. Energy response is not different for the following groups of energies: 4, 6, and 9 MeV; and 12 MeV, 15 MeV, and 18 MeV. Our proposal to name MOSFET rotations solves the problem of defining sensor orientations. Angular response could explain lower than expected results when the tip of the detector is lifted due to inadvertent movements. MOSFETs energy response is independent of several energies and differs by a maximum of 3.4% when dependent. This can limit dosimetry errors and makes it possible to calibrate the detectors only once for each group of energies, which saves time and optimizes lifespan of MOSFETs.

Development FD-SOI MOSFET Amplifiers for Integrated Read-Out Circuit of Superconducting-Tunnel-Junction Single-Photon-Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiuchi, Kenji; et al.

We proposed a new high-resolution single-photon infrared spectrometer for search for radiative decay of cosmic neutrino background (CνB). The superconducting-tunnel-junctions(STJs) are used as a single-photon counting device. Each STJ consists of Nb/Al/Al xO y/Al/Nb layers, and their thicknesses are optimized for the operation temperature at 370 mK cooled by a 3He sorption refrigerator. Our STJs achieved the leak current 250 pA, and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio (S/N). FD-SOI MOSFETs can be operated at cryogenic temperature ofmore » 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a nonlinear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors is 0.4 mV, and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET-based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp is required to have a fast response (GBW ≥ 100 MHz), and it must have low power dissipation as compared to the cooling power of refrigerator.« less

MOSFET analog memory circuit achieves long duration signal storage

NASA Technical Reports Server (NTRS)

1966-01-01

Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

LDMOS Channel Thermometer Based on a Thermal Resistance Sensor for Balancing Temperature in Monolithic Power ICs.

PubMed

Lin, Tingyou; Ho, Yingchieh; Su, Chauchin

2017-06-15

This paper presents a method of thermal balancing for monolithic power integrated circuits (ICs). An on-chip temperature monitoring sensor that consists of a poly resistor strip in each of multiple parallel MOSFET banks is developed. A temperature-to-frequency converter (TFC) is proposed to quantize on-chip temperature. A pulse-width-modulation (PWM) methodology is developed to balance the channel temperature based on the quantization. The modulated PWM pulses control the hottest of metal-oxide-semiconductor field-effect transistor (MOSFET) bank to reduce its power dissipation and heat generation. A test chip with eight parallel MOSFET banks is fabricated in TSMC 0.25 μm HV BCD processes, and total area is 900 × 914 μm². The maximal temperature variation among the eight banks can reduce to 2.8 °C by the proposed thermal balancing system from 9.5 °C with 1.5 W dissipation. As a result, our proposed system improves the lifetime of a power MOSFET by 20%.

LDMOS Channel Thermometer Based on a Thermal Resistance Sensor for Balancing Temperature in Monolithic Power ICs

PubMed Central

Lin, Tingyou; Ho, Yingchieh; Su, Chauchin

2017-01-01

This paper presents a method of thermal balancing for monolithic power integrated circuits (ICs). An on-chip temperature monitoring sensor that consists of a poly resistor strip in each of multiple parallel MOSFET banks is developed. A temperature-to-frequency converter (TFC) is proposed to quantize on-chip temperature. A pulse-width-modulation (PWM) methodology is developed to balance the channel temperature based on the quantization. The modulated PWM pulses control the hottest of metal-oxide-semiconductor field-effect transistor (MOSFET) bank to reduce its power dissipation and heat generation. A test chip with eight parallel MOSFET banks is fabricated in TSMC 0.25 μm HV BCD processes, and total area is 900 × 914 μm2. The maximal temperature variation among the eight banks can reduce to 2.8 °C by the proposed thermal balancing system from 9.5 °C with 1.5 W dissipation. As a result, our proposed system improves the lifetime of a power MOSFET by 20%. PMID:28617346

Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications

NASA Astrophysics Data System (ADS)

Kumar, Ajay; Tripathi, M. M.; Chaujar, Rishu

2018-04-01

In this work, a comprehensive analog and RF performance of a novel Black Phosphorus-Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm technology node (Gate length = 20 nm). The integration of black phosphorus with junctionless recessed channel MOSFET, leads to higher drain current of about 0.3 mA and excellent switching ratio (of the order of 1011) due to reduced off-current which leads to improvement in sub-threshold slope (SS) (67mV/dec). Further, RF performance metrics have also been studied with an aim to analyze high-frequency performance. The following FOMs have been evaluated: cut-off frequency (fT), maximum oscillator frequency (fMAX), stern stability factor, various power gains and parasitic capacitances at THz frequency range. Thus, in addition to the high packing density offered by RC MOSFET, the proposed design finds numerous application at THz frequency making it a promising candidate at wafer scale integration level.

Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi

2015-02-16

We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al{sub 2}O{sub 3} and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm{sup 2}/V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al{sub 2}O{sub 3} ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm{sup 2}/V s for GaSb-OI p-MOSFETs with themore » 20-nm-thick GaSb layer.« less

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

PubMed

Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

2015-11-13

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

PubMed Central

2012-01-01

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency. PMID:22901374

Characterization of commercial MOSFET detectors and their feasibility for in-vivo HDR brachytherapy.

PubMed

Phurailatpam, Reena; Upreti, Rituraj; Nojin Paul, Siji; Jamema, Swamidas V; Deshpande, Deepak D

2016-01-01

The present study was to investigate the use of MOSFET as an vivo dosimeter for the application of Ir-192 HDR brachytherapy treatments. MOSFET was characterized for dose linearity in the range of 50-1000 cGy, depth dose dependence from 2 to 7 cm, angular dependence. Signal fading was checked for two weeks. Dose linearity was found to be within 2% in the dose range (50-1000 cGy). The response varied within 8.07% for detector-source distance of 2-7 cm. The response of MOSFET with the epoxy side facing the source (0 degree) is the highest and the lowest response was observed at 90 and 270 degrees. Signal was stable during the study period. The detector showed high dose linearity and insignificant fading. But due to angular and depth dependence, care should be taken and corrections must be applied for clinical dosimetry. Copyright © 2015 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

PubMed Central

Penumatcha, Ashish V.; Salazar, Ramon B.; Appenzeller, Joerg

2015-01-01

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses. PMID:26563458

Charge plasma technique based dopingless accumulation mode junctionless cylindrical surrounding gate MOSFET: analog performance improvement

NASA Astrophysics Data System (ADS)

Trivedi, Nitin; Kumar, Manoj; Haldar, Subhasis; Deswal, S. S.; Gupta, Mridula; Gupta, R. S.

2017-09-01

A charge plasma technique based dopingless (DL) accumulation mode (AM) junctionless (JL) cylindrical surrounding gate (CSG) MOSFET has been proposed and extensively investigated. Proposed device has no physical junction at source to channel and channel to drain interface. The complete silicon pillar has been considered as undoped. The high free electron density or induced N+ region is designed by keeping the work function of source/drain metal contacts lower than the work function of undoped silicon. Thus, its fabrication complexity is drastically reduced by curbing the requirement of high temperature doping techniques. The electrical/analog characteristics for the proposed device has been extensively investigated using the numerical simulation and are compared with conventional junctionless cylindrical surrounding gate (JL-CSG) MOSFET with identical dimensions. For the numerical simulation purpose ATLAS-3D device simulator is used. The results show that the proposed device is more short channel immune to conventional JL-CSG MOSFET and suitable for faster switching applications due to higher I ON/ I OFF ratio.

Introduction of performance boosters like Ge as channel material for the future of CMOS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samia, Slimani, E-mail: slimani.samia@gmail.com; Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida; Bouaza, Djellouli, E-mail: djelbou@hotmail.fr

High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge is one of new attractive channel materials that require CMOS scaling For future technology nodes and future high performance P-MOSFETS, we have studied a nanoscale SOI DG MOSFETs using quantum simulation approach on DG MOSFETs within the variation of Ge channel concentration and in the presence of source and drain doping by replacing Silicon in the channel by Ge using various dielectric constant. The use of high mobility channel (like Ge) to maximize the MOSFET IDsat and simultaneously circumventmore » the poor electrostatic control to suppress short-channel effects and enhance source injection velocity. The leakage current (I{sub off}) can be controlled by different gates oxide thickness more ever the required threshold voltage (V{sub TH}) can be achieved by keeping gate work function and altering the doping channel.« less

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

NASA Technical Reports Server (NTRS)

Jones, C. W. (Editor)

1985-01-01

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

NASA Astrophysics Data System (ADS)

Jones, C. W.

1985-12-01

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Characterization of MOSFET dosimeter angular dependence in three rotational axes measured free-in-air and in soft-tissue equivalent material.

PubMed

Koivisto, Juha; Kiljunen, Timo; Wolff, Jan; Kortesniemi, Mika

2013-09-01

When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity dependence of MOSFET dosimeters in three rotational axes measured free-in-air and in soft-tissue equivalent material using dental photon energy. Free-in-air dose measurements were performed with three MOSFET dosimeters attached to a carbon fibre holder. Soft tissue measurements were performed with three MOSFET dosimeters placed in a polymethylmethacrylate (PMMA) phantom. All measurements were made in the isocenter of a dental cone-beam computed tomography (CBCT) scanner using 5º angular increments in the three rotational axes: axial, normal-to-axial and tangent-to-axial. The measurements were referenced to a RADCAL 1015 dosimeter. The angular sensitivity free-in-air (1 SD) was 3.7 ± 0.5 mV/mGy for axial, 3.8 ± 0.6 mV/mGy for normal-to-axial and 3.6 ± 0.6 mV/mGy for tangent-to-axial rotation. The angular sensitivity in the PMMA phantom was 3.1 ± 0.1 mV/mGy for axial, 3.3 ± 0.2 mV/mGy for normal-to-axial and 3.4 ± 0.2 mV/mGy for tangent-to-axial rotation. The angular sensitivity variations are considerably smaller in PMMA due to the smoothing effect of the scattered radiation. The largest decreases from the isotropic response were observed free-in-air at 90° (distal tip) and 270° (wire base) in the normal-to-axial and tangent-to-axial rotations, respectively. MOSFET dosimeters provide us with a versatile dosimetric method for dental radiology. However, due to the observed variation in angular sensitivity, MOSFET dosimeters should always be calibrated in the actual clinical settings for the beam geometry and angular range of the CBCT exposure.

Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers

PubMed Central

2014-01-01

Background The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer’s sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems. The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. Methods The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. Results We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers. Therefore, we performed a pulse-echo test using a single element transducer in order to utilize the crossed SMPS MOSFET-based protection circuit in an ultrasound system. Conclusions The SMPS-based protection circuit could be a viable alternative that provides better sensitivity, especially for high frequency ultrasound applications. PMID:24924595

Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers.

PubMed

Choi, Hojong; Shung, K Kirk

2014-06-12

The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer's sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems.The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers. Therefore, we performed a pulse-echo test using a single element transducer in order to utilize the crossed SMPS MOSFET-based protection circuit in an ultrasound system. The SMPS-based protection circuit could be a viable alternative that provides better sensitivity, especially for high frequency ultrasound applications.

Characterization of MOSFET dosimeter angular dependence in three rotational axes measured free-in-air and in soft-tissue equivalent material

PubMed Central

Koivisto, Juha; Kiljunen, Timo; Wolff, Jan; Kortesniemi, Mika

2013-01-01

When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity dependence of MOSFET dosimeters in three rotational axes measured free-in-air and in soft-tissue equivalent material using dental photon energy. Free-in-air dose measurements were performed with three MOSFET dosimeters attached to a carbon fibre holder. Soft tissue measurements were performed with three MOSFET dosimeters placed in a polymethylmethacrylate (PMMA) phantom. All measurements were made in the isocenter of a dental cone-beam computed tomography (CBCT) scanner using 5º angular increments in the three rotational axes: axial, normal-to-axial and tangent-to-axial. The measurements were referenced to a RADCAL 1015 dosimeter. The angular sensitivity free-in-air (1 SD) was 3.7 ± 0.5 mV/mGy for axial, 3.8 ± 0.6 mV/mGy for normal-to-axial and 3.6 ± 0.6 mV/mGy for tangent-to-axial rotation. The angular sensitivity in the PMMA phantom was 3.1 ± 0.1 mV/mGy for axial, 3.3 ± 0.2 mV/mGy for normal-to-axial and 3.4 ± 0.2 mV/mGy for tangent-to-axial rotation. The angular sensitivity variations are considerably smaller in PMMA due to the smoothing effect of the scattered radiation. The largest decreases from the isotropic response were observed free-in-air at 90° (distal tip) and 270° (wire base) in the normal-to-axial and tangent-to-axial rotations, respectively. MOSFET dosimeters provide us with a versatile dosimetric method for dental radiology. However, due to the observed variation in angular sensitivity, MOSFET dosimeters should always be calibrated in the actual clinical settings for the beam geometry and angular range of the CBCT exposure. PMID:23520268

Prognostics of Power MOSFET

NASA Technical Reports Server (NTRS)

Celaya, Jose Ramon; Saxena, Abhinav; Vashchenko, Vladislay; Saha, Sankalita; Goebel, Kai Frank

2011-01-01

This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs. The failure mechanism for the stress conditions is determined to be die-attachment degradation. Change in ON-state resistance is used as a precursor of failure due to its dependence on junction temperature. The experimental data is augmented with a finite element analysis simulation that is based on a two-transistor model. The simulation assists in the interpretation of the degradation phenomena and SOA (safe operation area) change.

Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect

DTIC Science & Technology

2011-05-01

SdH) magnetotrans- port measurements at a low temperature (2–15 K ) and a high magnetic field (0–9 T). We also present an EOT scalability study that...Fig. 2. Measured and modeled (a) split Cg–Vg and (b) G−Vg characteristics of an InAs0.8Sb0.2 QW-MOSFET at 77 K . dielectric (0.7 nm EOT) and barrier...measured and modeled split Cg–Vg and G−Vg characteristics of InAs0.8Sb0.2 QW-MOSFET at 77 K and the frequency dispersion characteristics due to the in

GaN MOSFET with Boron Trichloride-Based Dry Recess Process

NASA Astrophysics Data System (ADS)

Jiang, Y.; Wang, Q. P.; Tamai, K.; Miyashita, T.; Motoyama, S.; Wang, D. J.; Ao, J. P.; Ohno, Y.

2013-06-01

The dry recessed-gate GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure using boron trichloride (BCl3) as etching gas were fabricated and characterized. Etching with different etching power was conducted. Devices with silicon tetrachloride (SiCl4) etching gas were also prepared for comparison. Field-effect mobility and interface state density were extracted from current-voltage (I-V) characteristics. GaN MOSFETs on AlGaN/GaN heterostructure with BCl3 based dry recess achieved a high maximum electron mobility of 141.5 cm2V-1s-1 and a low interface state density.

Excimer laser annealing for low-voltage power MOSFET

NASA Astrophysics Data System (ADS)

Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Mazzamuto, Fulvio; Huet, Karim

2016-08-01

Excimer laser annealing of lumped beam was performed to form the P-base junction for high-performance low-voltage-power MOSFET. An equivalent shallow-junction structure for the P-base junction with a uniform impurity distribution is realized by adopting excimer laser annealing (ELA). The impurity distribution in the P-base junction can be controlled precisely by the irradiated pulse energy density and the number of shots of excimer laser. High impurity activation for the shallow junction has been confirmed in the melted phase. The application of the laser annealing technology in the fabrication process of a practical low-voltage trench gate MOSFET was also examined.

Random Telegraph Signal Amplitudes in Sub 100 nm (Decanano) MOSFETs: A 3D 'Atomistic' Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.; Saini, Subhash

2000-01-01

In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on the position of the trapped charge in the channel and on the device design parameters. We have observed a significant increase in the maximum RTS amplitude when discrete random dopants are employed in the simulations.

Mathematical Models of the Common-Source and Common-Gate Amplifiers using a Metal-Ferroelectric-Semiconductor Field effect Transistor

NASA Technical Reports Server (NTRS)

Hunt, Mitchell; Sayyah, Rana; Mitchell, Cody; Laws, Crystal; MacLeod, Todd C.; Ho, Fat D.

2013-01-01

Mathematical models of the common-source and common-gate amplifiers using metal-ferroelectric- semiconductor field effect transistors (MOSFETs) are developed in this paper. The models are compared against data collected with MOSFETs of varying channel lengths and widths, and circuit parameters such as biasing conditions are varied as well. Considerations are made for the capacitance formed by the ferroelectric layer present between the gate and substrate of the transistors. Comparisons between the modeled and measured data are presented in depth as well as differences and advantages as compared to the performance of each circuit using a MOSFET.

The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effects

NASA Technical Reports Server (NTRS)

Lowry, Lynn E.; Macwilliams, Kenneth P.; Isaac, Mary

1991-01-01

The use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.

Cryogenic switched MOSFET characterization

NASA Technical Reports Server (NTRS)

1981-01-01

Both p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.

Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method.

PubMed

Yoshikawa, Masanobu; Kosaka, Kenichi; Seki, Hirohumi; Kimoto, Tsunenobu

2016-07-01

We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and found that compressive stress of approximately 20 MPa occurs under the source and gate electrodes and tensile stress of approximately 10 MPa occurs between the source and gate electrodes. The experimental result was in close agreement with the result obtained by calculation using the finite element method (FEM). A combination of Raman spectroscopy and FEM provides much data on the stresses in 4H-SiC MOSFET. © The Author(s) 2016.

Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

NASA Astrophysics Data System (ADS)

Zebrev, Gennady I.; Vatuev, Alexander S.; Useinov, Rustem G.; Emeliyanov, Vladimir V.; Anashin, Vasily S.; Gorbunov, Maxim S.; Turin, Valentin O.; Yesenkov, Kirill A.

2014-08-01

We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.

Analyzing Single-Event Gate Ruptures In Power MOSFET's

NASA Technical Reports Server (NTRS)

Zoutendyk, John A.

1993-01-01

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

Type A behavior and occupational stress: a cross-cultural study of blue-collar workers.

PubMed

Evans, G W; Palsane, M N; Carrere, S

1987-05-01

Psychophysiological, archival, unobtrusive observation, and self-report data were compared for Type A and Type B male bus drivers in the United States and India. Type A bus drivers in comparison with their Type B counterparts have more accidents, absenteeism, official reprimands, and self-reports of occupational stress. In India, but not in the United States, Type A drivers brake, pass, and blow their horns more often than Type B drivers. Although drivers exhibited expected elevations in blood pressure and catecholamines on the job, the magnitude of these increases did not differ as a function of the Type A/B classification.

The prospects of transition metal dichalcogenides for ultimately scaled CMOS

NASA Astrophysics Data System (ADS)

Thiele, S.; Kinberger, W.; Granzner, R.; Fiori, G.; Schwierz, F.

2018-05-01

MOSFET gate length scaling has been a main source of progress in digital electronics for decades. Today, researchers still spend considerable efforts on reducing the gate length and on developing ultimately scaled MOSFETs, thereby exploring both new device architectures and alternative channel materials beyond Silicon such as two-dimensional TMDs (transition metal dichalcogenide). On the other hand, the envisaged scaling scenario for the next 15 years has undergone a significant change recently. While the 2013 ITRS edition required a continuation of aggressive gate length scaling for at least another 15 years, the 2015 edition of the ITRS suggests a deceleration and eventually a levelling off of gate length scaling and puts more emphasis on alternative options such as pitch scaling to keep Moore's Law alive. In the present paper, future CMOS scaling is discussed in the light of emerging two-dimensional MOSFET channel, in particular two-dimensional TMDs. To this end, the scaling scenarios of the 2013 and 2015 ITRS editions are considered and the scaling potential of TMD MOSFETs is investigated by means of quantum-mechanical device simulations. It is shown that for ultimately scaled MOSFETs as required in the 2013 ITRS, the heavy carrier effective masses of the Mo- and W-based TMDs are beneficial for the suppression of direct source-drain tunneling, while to meet the significantly relaxed scaling targets of the 2016 ITRS heavy-effective-mass channels are not needed.

Calculation of midplane dose for total body irradiation from entrance and exit dose MOSFET measurements.

PubMed

Satory, P R

2012-03-01

This work is the development of a MOSFET based surface in vivo dosimetry system for total body irradiation patients treated with bilateral extended SSD beams using PMMA missing tissue compensators adjacent to the patient. An empirical formula to calculate midplane dose from MOSFET measured entrance and exit doses has been derived. The dependency of surface dose on the air-gap between the spoiler and the surface was investigated by suspending a spoiler above a water phantom, and taking percentage depth dose measurements (PDD). Exit and entrances doses were measured with MOSFETs in conjunction with midplane doses measured with an ion chamber. The entrance and exit doses were combined using an exponential attenuation formula to give an estimate of midplane dose and were compared to the midplane ion chamber measurement for a range of phantom thicknesses. Having a maximum PDD at the surface simplifies the prediction of midplane dose, which is achieved by ensuring that the air gap between the compensator and the surface is less than 10 cm. The comparison of estimated midplane dose and measured midplane dose showed no dependence on phantom thickness and an average correction factor of 0.88 was found. If the missing tissue compensators are kept within 10 cm of the patient then MOSFET measurements of entrance and exit dose can predict the midplane dose for the patient.

Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub-0.1 (micron)meter MOSFET's: A 3-D 'Atomistic' Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen

1998-01-01

A three-dimensional (3-D) "atomistic" simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 microns MOSFET's is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. The effects of various MOSFET design parameters, including the channel length and width, oxide thickness and channel doping, on the threshold voltage lowering and fluctuations are studied using typical samples of 200 atomistically different MOSFET's. The atomistic results for the threshold voltage fluctuations were compared with two analytical models based on dopant number fluctuations. Although the analytical models predict the general trends in the threshold voltage fluctuations, they fail to describe quantitatively the magnitude of the fluctuations. The distribution of the atomistically calculated threshold voltage and its correlation with the number of dopants in the channel of the MOSFET's was analyzed based on a sample of 2500 microscopically different devices. The detailed analysis shows that the threshold voltage fluctuations are determined not only by the fluctuation in the dopant number, but also in the dopant position.

Real-time photoelectron spectroscopy study of the oxidation reaction kinetics on p-type and n-type Si (001) surfaces

NASA Astrophysics Data System (ADS)

Yu, Zhou

Silicon oxides thermally grown on Si surface are the core gate materials of metal-oxide-semiconductor field effect transistor (MOSFET). This thin oxide layer insulates the gate terminals and the transistors substrate which make MOSFET has certain advantages over those conventional junctions, such as field-effect transistor (FET) and junction field effect transistor (JFET). With an oxide insulating layer, MOSFET is able to sustain higher input impedance and the corresponding gate leakage current can be minimized. Today, though the oxidation process on Si substrate is popular in industry, there are still some uncertainties about its oxidation kinetics. On a path to clarify and modeling the oxidation kinetics, a study of initial oxidation kinetics on Si (001) surface has attracted attentions due to having a relatively low surface electron density and few adsorption channels compared with other Si surface direction. Based on previous studies, there are two oxidation models of Si (001) that extensively accepted, which are dual oxide species mode and autocatalytic reaction model. These models suggest the oxidation kinetics on Si (001) mainly relies on the metastable oxygen atom on the surface and the kinetic is temperature dependent. Professor Yuji Takakuwa's group, Surface Physics laboratory, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, observed surface strain existed during the oxidation kinetics on Si (001) and this is the first time that strain was discovered during Si oxidation. Therefore, it is necessary to explain where the strain comes from since none of previous model research included the surface strain (defects generation) into considerations. Moreover, recent developing of complementary metal-oxide-semiconductor (CMOS) requires a simultaneous oxidation process on p- and n-type Si substrate. However, none of those previous models included the dopant factor into the oxidation kinetic modeling. All of these points that further work is necessary to update and modify the traditional Si (001) oxidation models that had been accepted for several decades. To update and complement the Si (001) oxidation kinetics, an understanding of the temperature and dopant factor during initial oxidation kinetics on Si (001) is our first step. In this study, real-time photoelectron spectroscopy is applied to characterize the oxidized (001) surface and surface information was collected by ultraviolet photoelectron spectroscopy technique. By analyzing parameters such as O 2p spectra uptake, change of work function and the surface state in respect of p- and n- type Si (001) substrate under different temperature, the oxygen adsorption structure and the dopant factor can be determined. In this study, experiments with temperature gradients on p-type Si (001) were conducted and this aims to clarify the temperature dependent characteristic of Si (001) surface oxidation. A comparison of the O 2p uptake, change of work function and surface state between p-and n-type Si (001) is made under a normal temperature and these provides with the data to explain how the dopant factor impacts the oxygen adsorption structure on the surface. In the future, the study of the oxygen adsorption structure will lead to an explanation of the surface strain that discovered; therefore, fundamental of the initial oxidation on Si (001) would be updated and complemented, which would contribute to the future gate technology in MOSFET and CMOS.

Dc-To-Dc Converter Uses Reverse Conduction Of MOSFET's

NASA Technical Reports Server (NTRS)

Gruber, Robert P.; Gott, Robert W.

1991-01-01

In modified high-power, phase-controlled, full-bridge, pulse-width-modulated dc-to-dc converters, switching devices power metal oxide/semiconductor field-effect transistors (MOSFET's). Decreases dissipation of power during switching by eliminating approximately 0.7-V forward voltage drop in anti-parallel diodes. Energy-conversion efficiency increased.

Progress in MOSFET double-layer metalization

NASA Technical Reports Server (NTRS)

Gassaway, J. D.; Trotter, J. D.; Wade, T. E.

1980-01-01

Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).

Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

NASA Astrophysics Data System (ADS)

Agarwal, Harshit; Kushwaha, Pragya; Gupta, Chetan; Khandelwal, Sourabh; Hu, Chenming; Chauhan, Yogesh Singh

2016-01-01

In this paper, flicker noise behavior of lateral non-uniformly doped MOSFET is studied using impedance field method. Our study shows that Klaassen Prins (KP) method, which forms the basis of noise model in MOSFETs, underestimates flicker noise in such devices. The same KP method overestimates thermal noise by 2-3 orders of magnitude in similar devices as demonstrated in Roy et al. (2007). This apparent discrepancy between thermal and flicker noise behavior lies in origin of these noises, which leads to opposite trend of local noise power spectral density vs doping. We have modeled the physics behind such behavior, which also explain the trends observed in the measurements (Agarwal et al., 2015).

Impact of optical phonon scattering on inversion channel mobility in 4H-SiC trenched MOSFETs

NASA Astrophysics Data System (ADS)

Kutsuki, Katsuhiro; Kawaji, Sachiko; Watanabe, Yukihiko; Onishi, Toru; Fujiwara, Hirokazu; Yamamoto, Kensaku; Yamamoto, Toshimasa

2017-04-01

Temperature characteristics of the channel mobility were investigated for 4H-SiC trenched MOSFETs in the range from 30 to 200 °C. The conventional model of channel mobility limited by carrier scattering is based on Si-MOSFETs and shows a greatly different channel mobility from the experimental value, especially at high temperatures. On the other hand, our improved mobility model taking into account optical phonon scattering yielded results in excellent agreement with experimental results. Moreover, the major factors limiting the channel mobility were found to be Coulomb scattering in a low effective field (<0.7 MV/cm) and optical phonon scattering in a high effective field.

Digital MOS integrated circuits

NASA Astrophysics Data System (ADS)

Elmasry, M. I.

MOS in digital circuit design is considered along with aspects of digital VLSI, taking into account a comparison of MOSFET logic circuits, 1-micrometer MOSFET VLSI technology, a generalized guide for MOSFET miniaturization, processing technologies, novel circuit structures for VLSI, and questions of circuit and system design for VLSI. MOS memory cells and circuits are discussed, giving attention to a survey of high-density dynamic RAM cell concepts, one-device cells for dynamic random-access memories, variable resistance polysilicon for high density CMOS Ram, high performance MOS EPROMs using a stacked-gate cell, and the optimization of the latching pulse for dynamic flip-flop sensors. Programmable logic arrays are considered along with digital signal processors, microprocessors, static RAMs, and dynamic RAMs.

Quantum Corrections to the 'Atomistic' MOSFET Simulations

NASA Technical Reports Server (NTRS)

Asenov, Asen; Slavcheva, G.; Kaya, S.; Balasubramaniam, R.

2000-01-01

We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D 'atomistic' MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.

Integrated MOSFET-Embedded-Cantilever-Based Biosensor Characteristic for Detection of Anthrax Simulant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mostafa, Salwa; Lee, Ida; Islam, Syed K

2011-01-01

In this work, MOSFET-embedded cantilevers are configured as microbial sensors for detection of anthrax simulants, Bacillus thuringiensis. Anthrax simulants attached to the chemically treated gold-coated cantilever cause changes in the MOSFET drain current due to the bending of the cantilever which indicates the detection of anthrax simulant. Electrical properties of the anthrax simulant are also responsible for the change in the drain current. The test results suggest a detection range of 10 L of stimulant test solution (a suspension population of 1.3 107 colony-forming units/mL diluted in 40% ethanol and 60% deionized water) with a linear response of 31 A/more » L.« less

Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie

2011-01-01

Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

Single-event burnout hardening of planar power MOSFET with partially widened trench source

NASA Astrophysics Data System (ADS)

Lu, Jiang; Liu, Hainan; Cai, Xiaowu; Luo, Jiajun; Li, Bo; Li, Binhong; Wang, Lixin; Han, Zhengsheng

2018-03-01

We present a single-event burnout (SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional (3D) numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region (P-well region below the N+ source). The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer (LET), which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to 0.7 pC/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications. Project supported by the National Natural Science Foundation of China (Nos. 61404161, 61404068, 61404169).

Silicon junctionless field effect transistors as room temperature terahertz detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marczewski, J., E-mail: jmarcz@ite.waw.pl; Tomaszewski, D.; Zaborowski, M.

2015-09-14

Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a significant responsivity also in the open channel (low resistance) state. The responsivity for a photolithographically defined JL FET was 70 V/W and the noise equivalent power 460 pW/√Hz. Working in the open channel state may be advantageous for THz wireless and imaging applications because of its low thermal noise and possible high operating speed or large bandwidth. It has been proven that themore » junctionless MOSFETs can also operate in a zero gate bias mode, which enables simplification of the THz array circuitry. Existing models of THz detection by MOSFETs were considered and it has been demonstrated that the process of detection by these junctionless devices cannot be explained within the framework of the commonly accepted models and therefore requires a new theoretical approach.« less

A novel high performance ESD power clamp circuit with a small area

NASA Astrophysics Data System (ADS)

Zhaonian, Yang; Hongxia, Liu; Li, Li; Qingqing, Zhuo

2012-09-01

A MOSFET-based electrostatic discharge (ESD) power clamp circuit with only a 10 ns RC time constant for a 0.18-μm process is proposed. A diode-connected NMOSFET is used to maintain a long delay time and save area. The special structure overcomes other shortcomings in this clamp circuit. Under fast power-up events, the gate voltage of the clamp MOSFET does not rise as quickly as under ESD events, the special structure can keep the clamp MOSFET thoroughly off. Under a falsely triggered event, the special structure can turn off the clamp MOSFET in a short time. The clamp circuit can also reject the power supply noise effectively. Simulation results show that the clamp circuit avoids fast false triggering events such as a 30 ns/1.8 V power-up, maintains a 1.2 μs delay time and a 2.14 μs turn-off time, and reduces to about 70% of the RC time constant. It is believed that the proposed clamp circuit can be widely used in high-speed integrated circuits.

A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond

NASA Astrophysics Data System (ADS)

Yasutake, Nobuaki; Azuma, Atsushi; Ishida, Tatsuya; Ohuchi, Kazuya; Aoki, Nobutoshi; Kusunoki, Naoki; Mori, Shinji; Mizushima, Ichiro; Morooka, Tetsu; Kawanaka, Shigeru; Toyoshima, Yoshiaki

2007-11-01

A novel SiGe-S/D structure for high performance pMOSFET called two-step recessed SiGe-source/drain (S/D) is developed with careful optimization of recessed SiGe-S/D structure. With this method, hole mobility, short channel effect and S/D resistance in pMOSFET are improved compared with conventional recessed SiGe-S/D structure. To enhance device performance such as drain current drivability, SiGe region has to be closer to channel region. Then, conventional deep SiGe-S/D region with carefully optimized shallow SiGe SDE region showed additional device performance improvement without SCE degradation. As a result, high performance 24 nm gate length pMOSFET was demonstrated with drive current of 451 μA/μm at ∣ Vdd∣ of 0.9 V and Ioff of 100 nA/μm (552 μA/μm at ∣ Vdd∣ of 1.0 V). Furthermore, by combining with Vdd scaling, we indicate the extendability of two-step recessed SiGe-S/D structure down to 15 nm node generation.

Direct protein detection with a nano-interdigitated array gate MOSFET.

PubMed

Tang, Xiaohui; Jonas, Alain M; Nysten, Bernard; Demoustier-Champagne, Sophie; Blondeau, Franoise; Prévot, Pierre-Paul; Pampin, Rémi; Godfroid, Edmond; Iñiguez, Benjamin; Colinge, Jean-Pierre; Raskin, Jean-Pierre; Flandre, Denis; Bayot, Vincent

2009-08-15

A new protein sensor is demonstrated by replacing the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a nano-interdigitated array (nIDA). The sensor is able to detect the binding reaction of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein at a concentration lower than 1 ng/ml. The sensor exhibits a high selectivity and reproducible specific detection. We provide a simple model that describes the behavior of the sensor and explains the origin of its high sensitivity. The simulated and experimental results indicate that the drain current of nIDA-gate MOSFET sensor is significantly increased with the successive binding of the thiol layer, Iris and anti-Iris protein layers. It is found that the sensor detection limit can be improved by well optimizing the geometrical parameters of nIDA-gate MOSFET. This nanobiosensor, with real-time and label-free capabilities, can easily be used for the detection of other proteins, DNA, virus and cancer markers. Moreover, an on-chip associated electronics nearby the sensor can be integrated since its fabrication is compatible with complementary metal oxide semiconductor (CMOS) technology.

Current-voltage characteristics of molecular conductors: two versus three terminal

NASA Astrophysics Data System (ADS)

Damle, P.; Rakshit, T.; Paulsson, M.; Datta, S.

2002-09-01

This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative to a standard silicon MOSFET. A self-consistent solution of coupled quantum transport and Poisson's equations shows that even for extremely small channel lengths (about 1 nm), a ``well-tempered'' molecular FET demands much the same electrostatic considerations as a ``well-tempered'' conventional MOSFET. In other words, we show that just as in a conventional MOSFET, the gate oxide thickness needs to be much smaller than the channel length (length of the molecule) for the gate control to be effective. Furthermore, we show that a rigid molecule with metallic source and drain contacts has a temperature independent subthreshold slope much larger than 60 mV/decade, because the metal-induced gap states in the channel prevent it from turning off abruptly. However, this disadvantage can be overcome by using semiconductor contacts because of their band-limited nature.

Silicon device performance measurements to support temperature range enhancement

NASA Technical Reports Server (NTRS)

Bromstead, James; Weir, Bennett; Johnson, R. Wayne; Askew, Ray

1992-01-01

Testing of the metal oxide semiconductor (MOS)-controlled thyristor (MCT) has uncovered a failure mechanism at elevated temperature. The failure appears to be due to breakdown of the gate oxide. Further testing is underway to verify the failure mode. Higher current level inverters were built to demonstrate 200 C operation of the N-MOSFET's and insulated-gate-bipolar transistors (IGBT's) and for life testing. One MOSFET failed early in testing. The origin of this failure is being studied. No IGBT's have failed. A prototype 28-to-42 V converter was built and is being tested at room temperature. The control loop is being finalized. Temperature stable, high value (10 micro-F) capacitors appear to be the limiting factor in the design at this time. In this application, the efficiency will be lower for the IGBT version due to the large V sub(cesat) (3.5-4 V) compared to the input voltage of 28 V. The MOSFET version should have higher efficiency; however, the MOSFET does not appear to be as robust at 200 C. Both versions are built for comparison.

Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability

NASA Astrophysics Data System (ADS)

Samnakay, Rameez; Balandin, Alexander A.; Srinivasan, Purushothaman

2017-09-01

Bias temperature instability (BTI) is one of the critical device degradation mechanisms in poly-Si/SiON and metal gate/high-k complementary metal-oxide-semiconductor (CMOS) technologies. Using the pre- and post-BTI flicker noise measurements, we investigated the bulk trap density, Nt, in both of these technologies. The low-frequency noise spectra were predominantly of 1/fγ type with γ < 1 for NMOS and ∼1 for PMOS. For SiON based technologies, the lower VTH degradation due to PBTI was noticed while considerable VTH degradation was observed for NBTI in both SiON and MGHK technologies. Both MGHK and SiON pFETs show a clear increase in the effective volume trap density, Nt, after NBTI. The increase in Nt in MGHK n-MOSFETs during PBTI is markedly higher than that in MGHK p-MOSFETs during NBTI. From 2012-2016 he was a Research Assistant with the Nano-Device Laboratory at the University of California - Riverside, as well as a member of the Quality and Reliability engineering team at Globalfoundries, Inc. during the summer of 2014. He has currently authored or co-authored 10 journal publications and numerous conference presentations. His current research interests include 1/f noise in high-k dielectrics and fabricated 2D van der Waal thin-film devices Mr. Samnakay's awards and honors include the Dean's Distinguished Fellowship Award (University of California-Riverside) and induction into the IEEE-HKN honors society. He also serves as a reviewer for 6 journals including Applied Physics Letters, Journal of Physics: Condensed Matter and Nanotechnology journals.

Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

DOE PAGES

King, M. P.; Wu, X.; Eller, Manfred; ...

2016-12-07

Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibitmore » a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.« less

SOI CMOS Imager with Suppression of Cross-Talk

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Zheng, Xingyu; Cunningham, Thomas J.; Seshadri, Suresh; Sun, Chao

2009-01-01

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, M. P.; Wu, X.; Eller, Manfred

Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibitmore » a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.« less

RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs

NASA Astrophysics Data System (ADS)

Martin, Maria J.; Pascual, Elena; Rengel, Raúl

2012-07-01

This paper presents a detailed study of the RF and noise performance of n-type Schottky barrier (SB) MOSFETs with a particular focus on the influence of the Schottky barrier height (SBH) on the main dynamic and noise figures of merit. With this aim, a 2D Monte Carlo simulator including tunnelling transport across Schottky interfaces has been developed, with special care to consider quantum transmission coefficients and the influence of image charge effects at the Schottky junctions. Particular attention is paid to the microscopic transport features, including carrier mean free paths or number of scattering events along the channel for investigating the optimization of the device topology and the strategic concepts related to the noise performance of this new architecture. A more effective control of the gate electrode over drain current for low SBH (discussed in terms of internal physical quantities) is translated into an enhanced transconductance gm, cut-off frequency fT, and non-quasistatic dynamic parameters. The drain and gate intrinsic noise sources show a noteworthy degradation with the SBH reduction due to the increased current, influence of hot carriers and reduced number of phonon scatterings. However, the results evidence that this effect is counterbalanced by the extremely improved dynamic performance in terms of gm and fT. Therefore, the deterioration of the intrinsic noise performance of the SB-MOSFET has no significant impact on high-frequency noise FoMs as NFmin, Rn and Gass for low SBH and large gate overdrive conditions. The role of the SBH on Γopt, optimum noise reactance and susceptance has been also analyzed.

Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout

NASA Astrophysics Data System (ADS)

Hsu, Hung-Wen; Lee, Chang-Chun

2017-12-01

This research proposes a germanium (Ge)-based n-channel MOSFET with Ge0.93Si0.07 S/D stressor. A simulation technique is utilized to understand the layout effect of shallow trench isolation (STI) length, gate width, dummy active of diffusion (OD) length, and extended poly width on stress distribution in a channel region. Stress distribution in a channel region was simulated by ANSYS software based on finite element analysis. Furthermore, carrier mobility gain was evaluated by a second-order piezoresistance model. The piezoresistance coefficient of Ge nMOSFET varies from that of Si nMOSFET. The piezoresistance coefficient shows that longitudinal and transverse stresses are the dominant factors affecting the change in electron mobility in the channel region. For Ge-based nMOSFET, longitudinal stress tends to be tensile, whereas transverse stress tends to be compressive. Stress along channel length becomes more tensile when STI length decreases. By contrast, stress along the channel width becomes more compressive when gate width or extended poly width decreases. Electron mobility in Ge-based nMOSFET could be enhanced under the aforementioned conditions. The enhanced electron mobility becomes more significant as the device combines with a contact etching stop layer stressor. Moreover, the mobility can be improved by changing the STI length, gate width, dummy OD length, or extended poly width. This investigation systematically analyzed the relationship between layout factor and stress distribution.

Verification of eye lens dose in IMRT by MOSFET measurement.

PubMed

Wang, Xuetao; Li, Guangjun; Zhao, Jianling; Song, Ying; Xiao, Jianghong; Bai, Sen

2018-04-17

The eye lens is recognized as one of the most radiosensitive structures in the human body. The widespread use of intensity-modulated radiotherapy (IMRT) complicates dose verification and necessitates high standards of dose computation. The purpose of this work was to assess the computed dose accuracy of eye lens through measurements using a metal-oxide-semiconductor field-effect transistor (MOSFET) dosimetry system. Sixteen clinical IMRT plans of head and neck patients were copied to an anthropomorphic head phantom. Measurements were performed using the MOSFET dosimetry system based on the head phantom. Two MOSFET detectors were imbedded in the eyes of the head phantom as the left and the right lens, covered by approximately 5-mm-thick paraffin wax. The measurement results were compared with the calculated values with a dose grid size of 1 mm. Sixteen IMRT plans were delivered, and 32 measured lens doses were obtained for analysis. The MOSFET dosimetry system can be used to verify the lens dose, and our measurements showed that the treatment planning system used in our clinic can provide adequate dose assessment in eye lenses. The average discrepancy between measurement and calculation was 6.7 ± 3.4%, and the largest discrepancy was 14.3%, which met the acceptability criterion set by the American Association of Physicists in Medicine Task Group 53 for external beam calculation for multileaf collimator-shaped fields in buildup regions. Copyright © 2018 American Association of Medical Dosimetrists. Published by Elsevier Inc. All rights reserved.

Surface dose measurements from air gaps under a bolus by using a MOSFET dosimeter in clinical oblique photon beams

NASA Astrophysics Data System (ADS)

Chung, Jin-Beom; Kim, Jae-Sung; Kim, In-Ah; Lee, Jeong-Woo

2012-10-01

This study is intended to investigate the effects of surface dose from air gaps under the bolus in clinically used oblique photon beams by using a Markus parallel-plate chamber and a metal-oxide semiconductor field-effect transistor (MOSFET) dosimeter. To evaluate the performances of the two detectors, the percentage surface doses of the MOSFET dosimeters in without an air gap under the bolus material were measured and compared with those of the Markus parallel-plate chamber. MOSFET dosimeters at the surface provided results mostly in good agreement with the parallelplate chamber. The MOSFET dosimeters seemed suitable for surface dose measurements having excellent accuracy for clinical used photon beams. The relative surface doses were measured with air gaps (2, 5, 10 mm) and without an air gap under 3 different bolus setups: (1) unbolused (no bolus), (2) 5-mm bolus, and (3) 10-mm bolus. The reductions in the surface dose substantially increased with small field size, thick bolus, and large air gap. The absolute difference in the reductions of the surface dose between the MOSFET dosimeter and the Markus parallel-plate chamber was less than 1.1%. Results at oblique angles of incidence showed larger reductions in surface dose with increasing angle of incidence. The largest reduction in surface dose was recorded for a 6 × 6 cm2 field at a 60° angle of incidence with an 10-mm air gap under a 10-mm bolus. When a 10-mm bolus was used, a reduction in the surface dose with an air gap of up to 10.5% could be achieved by varying the field size and the incident angle. Therefore, air gaps under the bolus should be avoided in radiotherapy treatment, especially for photon beam with highly oblique angles of incidence.

SU-E-T-482: In Vivo Dosimetry of An Anthropomorphic Phantom by Using the RADPOS System for Proton Beam Therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohno, R; Motegi, K; Hotta, K

Purpose: Delivered doses in an anthropomorphic phantom were evaluated by using the RADPOS system for proton beam therapy. Methods: The RADPOS in vivo dosimetry system combines an electromagnetic positioning sensor with MOSFET dosimetry, allowing simultaneous online measurements of dose and spatial position. Through the RADPOS system, dose evaluation points can be determined. In vivo proton dosimetry was evaluated by using the RADPOS system and anthropomorphic head and neck phantom. MOSFET doses measured at 3D positions obtained with the RADPOS were compared to the treatment plan values that were calculated by a simplified Monte Carlo (SMC) method. Although the MOSFET responsemore » depends strongly on the linear energy transfer (LET) of proton beam, the MOSFET responses to proton beams were corrected with the SMC. Here, the SMC calculated only dose deposition determined by the experimental depth–dose distribution and lateral displacement of protons due to both multiple scattering effect in materials and incident angle. As a Result, the SMC could quickly calculate accurate doses in even heterogeneities. Results: In vivo dosimetry by using the RADPOS, as well as the MOSFET doses agreed in comparison with calculations by the SMC in the range of −3.0% to 8.3%. Most measurement errors occurred because of the uncertainties of dose calculations due to the position error of 1 mm. Conclusion: We evaluated the delivered doses in the anthropomorphic phantom by using the RADPOS system for proton beam therapy. The MOSFET doses agreed in comparison with calculations by the SMC within the measurement error. Therefore, we could successfully control the uncertainties of the measurement positions by using the RADPOS system within 1 mm in in vivo proton dosimetry. We aim for the clinical application of in vivo proton dosimetry with this RADPOS system.« less

Identifying driver characteristics influencing overtaking crashes.

PubMed

Mohaymany, Afshin Shariat; Kashani, Ali Tavakoli; Ranjbari, Andishe

2010-08-01

To identify the most important driver characteristics influencing crash-causing overtaking maneuvers on 2-lane, 2-way rural roads of Iran. Based on the crash data for rural roads of Iran over 3 years from 2006 to 2008, the classification and regression tree (CART) method combined with the quasi-induced exposure concept was applied for 4 independent variables and one target variable of "driver status" with 2 classes of at fault and not at fault. The independent variables were vehicle type, driver's age, driving license, and driving experience of the driver-the latter 2 driver characteristics are relatively new in traffic safety studies. According to the data set, 16,809 drivers were involved in 2-lane, 2-way rural roads overtaking crashes. The analysis revealed that drivers who are younger than 28 years old, whose driving license is type 2--a common driving license that is for driving with passenger car and light vehicles--and whose driving experience is less than 2 years are most probably responsible for overtaking crashes. It was indicated that vehicle type is the most important factor associated with drivers being responsible for the crashes. The results also revealed that younger drivers (18-28 years) are most likely to be at fault in overtaking crashes. Therefore, enforcement and education should be more concentrated on this age group. Due to the incompliant nature of this group, changing the type and amount of traffic fines is essential for more preventing objectives. The research also found 2 relatively new factors of driving license and driving experience to have considerable effects on drivers being at fault, such that type 2 licensed drivers are more responsible compared to type 1 (a driving license for driving with all motor vehicles, which has some age and experience requirements) licensed drivers or drivers with a special license (a driving license with special vehicle types). Moreover, drivers with less than 2 years' driving experience are more responsible for these kind of crashes; thus prohibiting new drivers from driving on rural roads for new drivers seems substantial.

Surface roughness scattering of electrons in bulk mosfets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zuverink, Amanda Renee

2015-11-01

Surface-roughness scattering of electrons at the Si-SiO 2 interface is a very important consideration when analyzing Si metal-oxide-semiconductor field-effect transistors (MOSFETs). Scattering reduces the mobility of the electrons and degrades the device performance. 250-nm and 50-nm bulk MOSFETs were simulated with varying device parameters and mesh sizes in order to compare the effects of surface-roughness scattering in multiple devices. The simulation framework includes the ensemble Monte Carlo method used to solve the Boltzmann transport equation coupled with a successive over-relaxation method used to solve the two-dimensional Poisson's equation. Four methods for simulating the surface-roughness scattering of electrons were implemented onmore » both devices and compared: the constant specularity parameter, the momentum-dependent specularity parameter, and the real-space-roughness method with both uniform and varying electric fields. The specularity parameter is the probability of an electron scattering speculariy from a rough surface. It can be chosen as a constant, characterizing partially diffuse scattering of all electrons from the surface the same way, or it can be momentum dependent, where the size of rms roughness and the normal component of the electron wave number determine the probability of electron-momentum randomization. The real-space rough surface method uses the rms roughness height and correlation length of an actual MOSFET to simulate a rough interface. Due to their charge, electrons scatter from the electric field and not directly from the surface. If the electric field is kept uniform, the electrons do not perceive the roughness and scatter as if from a at surface. However, if the field is allowed to vary, the electrons scatter from the varying electric field as they would in a MOSFET. These methods were implemented for both the 50-nm and 250-nm MOSFETs, and using the rms roughness heights and correlation lengths for real devices. The current-voltage and mobility-electric field curves were plotted for each method on the two devices and compared. The conclusion is that the specularity-parameter methods are valuable as simple models for relatively smooth interfaces. However, they have limitations, as they cannot accurately describe the drastic reduction in the current and the electron mobility that occur in MOSFETs with very rough Si-SiO 2 interfaces.« less

TH-AB-BRA-06: MOSFET-Based Dosimetry in An MR Image-Guided Radiation Therapy System: Comparison with and Without a Static 0.3T Magnetic Field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cammin, J; Curcuru, A; Li, H

Purpose: To compare depth-dose and surface-dose measurements without and with the magnetic field in a 0.3T MR image-guided Co-60 treatment unit using MOSFET dosimeters. Methods: MOSFET dosimeters (Best Medical Canada, model TN-502RDH-10) were placed in a solid water phantom at 5cm depth with 8cm backscatter (with the MOSFET wires in different orientations to the couch long axis) and also on the surface of an 8cm solid water phantom. The phantoms were placed in an MR image-guided Co-60 treatment machine at an SAD of 105cm to the MOSFETs. Dose measurements were performed between 50 and 200cGy at 5cm depth in amore » 10.5cm × 10.5cm radiation field without the magnetic field (during a machine maintenance period) and with the nominal magnetic field of 0.3T. The dose linearity was measured at 5cm depth with an orthogonal field and the angular dose dependence was measured on the surface with an orthogonal field and oblique fields at +60 degrees and −60 degrees. Results: The measured MOSFET readings at 5cm depth were linear with dose with slopes of (2.97 +/− 0.01) mV/cGy and (3.01 +/− 0.02) mV/cGy without and with the magnetic field, respectively. No statistically significant difference was found. The surface dose measurements, however, were lower by 6.4% for the AP field (2.3 σ) with magnetic field, 4.9% for the −60 degree field (1.4 σ), and 0.4% different for the +60 degree field (0.2 σ). Conclusion: There is no statistically significant difference in the dose at depth without and with the magnetic field and different orientations of the MOSFET wires. There is a statistically significant difference for the surface dose due to the influence of the magnetic field on secondary electrons from head-scatter and the build-up region in certain field orientations. Clinical surface-dose dosimetry in a magnetic field should apply asymmetric angle-dependent corrections.« less

High Voltage, Solid-State Switch for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Prager, James; Miller, Kenneth E.; Slobodov, Ilia

2017-10-01

Eagle Harbor Technologies, Inc. is developing a series stack of solid-state switches to produce a single high voltage switch that can be operated at over 35 kV. During the Phase I program, EHT developed two high voltage switch modules: one with isolated power gate drive and a second with inductively coupled gate drive. These switches were tested at 15 kV and up to 300 A at switching frequencies up to 500 kHz for 10 ms bursts. Robust switching was demonstrated for both IGBTs and SiC MOSFETs. During the Phase II program, EHT will develop a higher voltage switch (>35 kV) that will be suitable for high pulsed and average power applications. EHT will work with LTX to utilize these switches to design, build, and test a pulsed magnetron driver that will be delivered to LTX before the completion of the program. EHT will present data from the Phase I program as well as preliminary results from the start of the Phase II program. With support of DOE SBIR.

Response Of A MOSFET To A Cosmic Ray

NASA Technical Reports Server (NTRS)

Benumof, Reuben; Zoutendyk, John A.

1988-01-01

Theoretical paper discusses response of enhancement-mode metal oxide/semiconductor field-effect transistor to cosmic-ray ion that passes perpendicularly through gate-oxide layers. Even if ion causes no permanent damage, temporary increase of electrical conductivity along track of ion large enough and long enough to cause change in logic state in logic circuit containing MOSFET.

MCT/MOSFET Switch

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1990-01-01

Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

Investigations into the Power MOSFET SEGR Phenomenon and its Physical Mechanism

NASA Technical Reports Server (NTRS)

Swift, G. M.; Edmonds, L. E.; Miyahira, T.; Nichols, D. K.; Johnston, A. H.

1997-01-01

The state of understanding of the destructive SEGR event in power MOSFETs is relatively mature with large published efforts, both experimental and theoretical. However, gasps remain in the uderstanding of the phenomenon, including unexplained anomalies, emperical-only dependencies on some important device and incident ion physical parameters, and limited insight into latent effets.

First observation of proton induced power MOSFET burnout in space: the CRUX experiment on APEX

NASA Astrophysics Data System (ADS)

Adolphsen, J. W.; Barth, J. L.; Gee, G. B.

1996-12-01

Ground testing has shown that power MOSFETs are susceptible to burnout when irradiated with heavy ions and protons. Satellite data from the Cosmic Ray Upset Experiment (CRUX) demonstrate that single event burnouts (SEBs) on 100-volt and 200-volt power MOSFETs can and do occur in space. Few SEBs occurred on the 100-volt devices, all at L/sup 1/>3. The 200-volt devices experienced many SEBs at L<3 when drain-to-source voltage (V/sub D-S/) was greater than 85% of maximum rated voltage. CRUX flight lot devices were ground tested with protons. The SEB rates calculated with the cross-sections from the ground tests show close agreement with the measured rates.

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

2018-01-01

The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.

Study of the dose rate effect of 180 nm nMOSFETs

NASA Astrophysics Data System (ADS)

He, Bao-Ping; Yao, Zhi-Bin; Sheng, Jiang-Kun; Wang, Zu-Jun; Huang, Shao-Yan; Liu, Min-Bo; Xiao, Zhi-Gang

2015-01-01

Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A “true” dose rate effect (TDRE) is observed. Increased damage is observed at low dose rate (LDR) than at high dose rate (HDR) when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation (STI) is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.

Accelerated Aging with Electrical Overstress and Prognostics for Power MOSFETs

NASA Technical Reports Server (NTRS)

Saha, Sankalita; Celaya, Jose Ramon; Vashchenko, Vladislav; Mahiuddin, Shompa; Goebel, Kai F.

2011-01-01

Power electronics play an increasingly important role in energy applications as part of their power converter circuits. Understanding the behavior of these devices, especially their failure modes as they age with nominal usage or sudden fault development is critical in ensuring efficiency. In this paper, a prognostics based health management of power MOSFETs undergoing accelerated aging through electrical overstress at the gate area is presented. Details of the accelerated aging methodology, modeling of the degradation process of the device and prognostics algorithm for prediction of the future state of health of the device are presented. Experiments with multiple devices demonstrate the performance of the model and the prognostics algorithm as well as the scope of application. Index Terms Power MOSFET, accelerated aging, prognostics

Effects of drain bias on the statistical variation of double-gate tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Choi, Woo Young

2017-04-01

The effects of drain bias on the statistical variation of double-gate (DG) tunnel field-effect transistors (TFETs) are discussed in comparison with DG metal-oxide-semiconductor FETs (MOSFETs). Statistical variation corresponds to the variation of threshold voltage (V th), subthreshold swing (SS), and drain-induced barrier thinning (DIBT). The unique statistical variation characteristics of DG TFETs and DG MOSFETs with the variation of drain bias are analyzed by using full three-dimensional technology computer-aided design (TCAD) simulation in terms of the three dominant variation sources: line-edge roughness (LER), random dopant fluctuation (RDF) and workfunction variation (WFV). It is observed than DG TFETs suffer from less severe statistical variation as drain voltage increases unlike DG MOSFETs.

Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

NASA Astrophysics Data System (ADS)

Shin, Sunhae; Rok Kim, Kyung

2015-06-01

In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors.

Discovery of cancer common and specific driver gene sets

PubMed Central

2017-01-01

Abstract Cancer is known as a disease mainly caused by gene alterations. Discovery of mutated driver pathways or gene sets is becoming an important step to understand molecular mechanisms of carcinogenesis. However, systematically investigating commonalities and specificities of driver gene sets among multiple cancer types is still a great challenge, but this investigation will undoubtedly benefit deciphering cancers and will be helpful for personalized therapy and precision medicine in cancer treatment. In this study, we propose two optimization models to de novo discover common driver gene sets among multiple cancer types (ComMDP) and specific driver gene sets of one certain or multiple cancer types to other cancers (SpeMDP), respectively. We first apply ComMDP and SpeMDP to simulated data to validate their efficiency. Then, we further apply these methods to 12 cancer types from The Cancer Genome Atlas (TCGA) and obtain several biologically meaningful driver pathways. As examples, we construct a common cancer pathway model for BRCA and OV, infer a complex driver pathway model for BRCA carcinogenesis based on common driver gene sets of BRCA with eight cancer types, and investigate specific driver pathways of the liquid cancer lymphoblastic acute myeloid leukemia (LAML) versus other solid cancer types. In these processes more candidate cancer genes are also found. PMID:28168295

III-V/Ge MOS device technologies for low power integrated systems

NASA Astrophysics Data System (ADS)

Takagi, S.; Noguchi, M.; Kim, M.; Kim, S.-H.; Chang, C.-Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.

2016-11-01

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.

Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N-channel depletion MOSFETs

NASA Astrophysics Data System (ADS)

Gnana Prakash, A. P.; Pradeep, T. M.; Hegde, Vinayakprasanna N.; Pushpa, N.; Bajpai, P. K.; Patel, S. P.; Trivedi, Tarkeshwar; Bhushan, K. G.

2017-12-01

NPN transistors and N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 5 MeV protons and 60Co gamma radiation in the dose ranging from 1 Mrad(Si) to 100 Mrad(Si). The different electrical characteristics of the NPN transistor such as Gummel characteristics, excess base current (ΔIB), dc current gain (hFE), transconductance (gm), displacement damage factor (K) and output characteristics were studied as a function of total dose. The different electrical characteristics of N-channel MOSFETs such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot), transconductance (gm), mobility (µ) and drain saturation current (IDSat) were studied systematically before and after irradiation in the same dose ranges. A considerable increase in the base current (IB) and decrease in the hFE, gm and collector saturation current (ICSat) were observed after irradiation in the case of the NPN transistor. In the N-channel MOSFETs, the ΔNit and ΔNot were found to increase and Vth, gm, µ and IDSat were found to decrease with increase in the radiation dose. The 5 MeV proton irradiation results of both the NPN transistor and N-channel MOSFETs were compared with 60Co gamma-irradiated devices in the same dose ranges. It was observed that the degradation in 5 MeV proton-irradiated devices is more when compared with the 60Co gamma-irradiated devices at higher total doses.

Circuits of cancer drivers revealed by convergent misregulation of transcription factor targets across tumor types.

PubMed

Gonzalez-Perez, Abel

2016-01-20

Large tumor genome sequencing projects have now uncovered a few hundred genes involved in the onset of tumorigenesis, or drivers, in some two dozen malignancies. One of the main challenges emerging from this catalog of drivers is how to make sense of their heterogeneity in most cancer types. This is key not only to understand how carcinogenesis appears and develops in these malignancies to be able to early diagnose them, but also to open up the possibility to employ therapeutic strategies targeting a driver protein to counteract the alteration of another connected driver. Here, I focus on driver transcription factors and their connection to tumorigensis in several tumor types through the alteration of the expression of their targets. First, I explore their involvement in tumorigenesis as mutational drivers in 28 different tumor types. Then, I collect a list of downstream targets of the all driver transcription factors (TFs), and identify which of them exhibit a differential expression upon alterations of driver transcription factors. I identify the subset of targets of each TF most likely mediating the tumorigenic effect of their driver alterations in each tumor type, and explore their overlap. Furthermore, I am able to identify other driver genes that cause tumorigenesis through the alteration of very similar sets of targets. I thus uncover these circuits of connected drivers which cause tumorigenesis through the perturbation of overlapping cellular pathways in a pan-cancer manner across 15 malignancies. The systematic detection of these circuits may be key to propose novel therapeutic strategies indirectly targeting driver alterations in tumors.

Liquid helium-cooled MOSFET preamplifier for use with astronomical bolometer

NASA Technical Reports Server (NTRS)

Goebel, J. H.

1977-01-01

A liquid helium-cooled p-channel enhancement mode MOSFET, the 3N167, is found to have sufficiently low noise for use as a preamplifier with helium-cooled bolometers that are used in infrared astronomy. Its characteristics at 300, 77, and 4.2 K are presented. It is also shown to have useful application with certain photoconductive and photovoltaic infrared detectors.

Prognostics of Power Mosfets Under Thermal Stress Accelerated Aging Using Data-Driven and Model-Based Methodologies

NASA Technical Reports Server (NTRS)

Celaya, Jose; Saxena, Abhinav; Saha, Sankalita; Goebel, Kai F.

2011-01-01

An approach for predicting remaining useful life of power MOSFETs (metal oxide field effect transistor) devices has been developed. Power MOSFETs are semiconductor switching devices that are instrumental in electronics equipment such as those used in operation and control of modern aircraft and spacecraft. The MOSFETs examined here were aged under thermal overstress in a controlled experiment and continuous performance degradation data were collected from the accelerated aging experiment. Dieattach degradation was determined to be the primary failure mode. The collected run-to-failure data were analyzed and it was revealed that ON-state resistance increased as die-attach degraded under high thermal stresses. Results from finite element simulation analysis support the observations from the experimental data. Data-driven and model based prognostics algorithms were investigated where ON-state resistance was used as the primary precursor of failure feature. A Gaussian process regression algorithm was explored as an example for a data-driven technique and an extended Kalman filter and a particle filter were used as examples for model-based techniques. Both methods were able to provide valid results. Prognostic performance metrics were employed to evaluate and compare the algorithms.

Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au; Jolley, G.; Umana-Membreno, G. A.

2014-08-28

Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs basedmore » on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10 nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10 nm regime.« less

Monte Carlo Simulation of THz Radiation Detection in GaN MOSFET n+nn+ Channel with Uncentered Gate in n-region

NASA Astrophysics Data System (ADS)

Palermo, C.; Torres, J.; Varani, L.; Gružinskis, V.; Starikov, E.; Shiktorov, P.; Ašmontas, S.; Sužiedelis, A.

2017-10-01

Electron transport and drain current noise in the wurtzite GaN MOSFET have been studied by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. A proper design of GaN MOSFET n+nn+ channel with uncentered gate in n-region to reach the maximum detection sensitivity is proposed. It is shown that the main role in formation of longitudinal transport asymmetry and THz radiation detection is played by optical phonon emission process. It is found that the detection current at 300 K is maximal in frequency range from 0.5 to 7 THz. At higher frequenciea the detection current rapidly decreases due to the inertia of electron motion.

Charge-based MOSFET model based on the Hermite interpolation polynomial

NASA Astrophysics Data System (ADS)

Colalongo, Luigi; Richelli, Anna; Kovacs, Zsolt

2017-04-01

An accurate charge-based compact MOSFET model is developed using the third order Hermite interpolation polynomial to approximate the relation between surface potential and inversion charge in the channel. This new formulation of the drain current retains the same simplicity of the most advanced charge-based compact MOSFET models such as BSIM, ACM and EKV, but it is developed without requiring the crude linearization of the inversion charge. Hence, the asymmetry and the non-linearity in the channel are accurately accounted for. Nevertheless, the expression of the drain current can be worked out to be analytically equivalent to BSIM, ACM and EKV. Furthermore, thanks to this new mathematical approach the slope factor is rigorously defined in all regions of operation and no empirical assumption is required.

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

NASA Astrophysics Data System (ADS)

Takashima, Shinya; Ueno, Katsunori; Matsuyama, Hideaki; Inamoto, Takuro; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Nakagawa, Kiyokazu

2017-12-01

Lateral GaN MOSFETs on homoepitaxial p-GaN layers with different Mg doping concentrations ([Mg]) have been evaluated to investigate the impact of [Mg] on MOS channel properties. It is demonstrated that the threshold voltage (V th) can be controlled by [Mg] along with the theoretical curve. The field effect mobility also shows [Mg] dependence and a maximum field effect mobility of 123 cm2 V-1 s-1 is achieved on [Mg] = 6.5 × 1016 cm-3 layer with V th = 3.0 V. The obtained results indicate that GaN MOSFETs can be designed on the basis of the doping concentration of the p-GaN layer with promising characteristics for the realization of power MOSFETs.

GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.

PubMed

Li, Wenjun; Brubaker, Matt D; Spann, Bryan T; Bertness, Kris A; Fay, Patrick

2018-02-01

Wrap-around gate GaN nanowire MOSFETs using Al 2 O 3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 42 μA/μm (normalized by nanowire circumference), on/off ratio over 10 8 , an intrinsic transconductance of 27.8 μS/μm, for a switching efficiency figure of merit, Q=g m /SS of 0.41 μS/μm-dec/mV. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications such as sensors and RF for the internet of things.

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Campabadal, F.

2001-08-01

The hot-carrier degradation of lightly doped drain (LDD) and large angle tilt implanted drain (LATID) nMOSFETs of a 0.35 μm CMOS technology is analysed and compared by means of I-V characterisation and charge pumping current measurements. LATID nMOSFETs are found to exhibit a significant improvement in terms of both, current drivability and hot-carrier immunity at maximum substrate current condition. The different factors which can be responsible for this improved hot-carrier resistance are investigated. It is shown that this must be attributed to a reduction of the maximum lateral electric field along the channel, but not to a minor generation of physical damage for a given electric field or to a reduced I-V susceptibility to a given amount of generated damage. Further to this analysis, the hot-carrier degradation comparison between LDD and LATID devices is extended to the whole range of gate-stress regimes and the effects of short electron injection (SEI) and short hole injection (SHI) phases on hot-carrier-stressed devices are analysed. Apart from a significant improved resistance to hot-carrier effects registered for LATID devices, a similar behaviour is observed for the two types of architectures. In this way, SEI phases are found to be an efficient tool for revealing part of the damage generated in stresses at low gate voltages, whereas the performance of a first SHI phase after stress at high gate bias is found to result in a significant additional degradation of the devices. This enhanced degradation is attributed to a sudden interface states build-up occurring in both, LDD and LATID devices, near the Si/spacer interface only under the first hot-hole injection condition.

Effective doses in children: association with common complex imaging techniques used during interventional radiology procedures.

PubMed

Lai, Priscilla; McNeil, Sarah M; Gordon, Christopher L; Connolly, Bairbre L

2014-12-01

The purpose of this study was to determine the range of effective doses associated with imaging techniques used during interventional radiology procedures on children. A pediatric phantom set (1, 5, and 10 years) coupled with high-sensitivity metal oxide semiconductor field effect transistor (MOSFET) dosimeters was used to calculate effective doses. Twenty MOSFETs were inserted into each phantom at radiosensitive organ locations. The phantoms were exposed to mock head, chest, and abdominal interventional radiology procedures performed with different geometries and magnifications. Fluoroscopy, digital subtraction angiography (DSA), and spin angiography were simulated on each phantom. Road mapping was conducted only on the 5-year-old phantom. International Commission on Radiological Protection publication 103 tissue weights were applied to the organ doses recorded with the MOSFETs to determine effective dose. For easy application to clinical cases, doses were normalized per minute of fluoroscopy and per 10 frames of DSA or spin angiography. Effective doses from DSA, angiography, and fluoroscopy were higher for younger ages because of magnification use and were largest for abdominal procedures. DSA of the head, chest, and abdomen (normalized per 10 frames) imparted doses 2-3 times as high as corresponding doses per minute of fluoroscopy while all other factors remained unchanged (age, projection, collimation, magnification). Three to five frames of DSA imparted an effective dose equal to doses from 1 minute of fluoroscopy. Doses from spin angiography were almost one-half the doses received from an equivalent number of frames of DSA. Patient effective doses during interventional procedures vary substantially depending on procedure type but tend to be higher because of magnification use in younger children and higher in the abdomen.

A novel double gate metal source/drain Schottky MOSFET as an inverter

NASA Astrophysics Data System (ADS)

Loan, Sajad A.; Kumar, Sunil; Alamoud, Abdulrahman M.

2016-03-01

In this work, we propose and simulate a novel structure of a double gate metal source/drain (MSD) Schottky MOSFET. The novelty of the proposed device is that it realizes a complete CMOS inverter action, which is actually being realized by the combination of two n and p type MOS transistors in the conventional CMOS technology. Therefore, the use of this device will significantly reduce the transistor count in implementing combinational and sequential circuits. Further, there is a significant reduction in the number of junctions and regions in the proposed device in comparison to the conventional CMOS inverter. Therefore, the proposed device is compact and can consume less power. The proposed device has been named as Sajad-Sunil-Schottky (SSS) device. The mixed mode circuit analysis of the proposed SSS device has shown that a CMOS inverter action with high logic level (VOH) and low logic level (VOL) as ∼VDD and ∼ground respectively. A two dimensional calibrated simulation study using the experimental data has revealed that the proposed SSS device in n and p type modes have subthreshold slopes (S) of 130 mV/decade and 85 mV/decade respectively and have reasonable high ION and ION/IOFF ratio's. Furthermore, it has been proved that such a device action cannot be realised by folding the conventional doped n and p MOS transistors.

2D Quantum Simulation of MOSFET Using the Non Equilibrium Green's Function Method

NASA Technical Reports Server (NTRS)

Svizhenko, Alexel; Anantram, M. P.; Govindan, T. R.; Yan, Jerry (Technical Monitor)

2000-01-01

The objectives this viewgraph presentation summarizes include: (1) the development of a quantum mechanical simulator for ultra short channel MOSFET simulation, including theory, physical approximations, and computer code; (2) explore physics that is not accessible by semiclassical methods; (3) benchmarking of semiclassical and classical methods; and (4) study other two-dimensional devices and molecular structure, from discretized Hamiltonian to tight-binding Hamiltonian.

Radiation Effects on DC-DC Converters

NASA Technical Reports Server (NTRS)

Zhang, De-Xin; AbdulMazid, M. D.; Attia, John O.; Kankam, Mark D. (Technical Monitor)

2001-01-01

In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.

An in-house developed resettable MOSFET dosimeter for radiotherapy.

PubMed

Verellen, Dirk; Van Vaerenbergh, Sven; Tournel, Koen; Heuninckx, Karina; Joris, Laurent; Duchateau, Michael; Linthout, Nadine; Gevaert, Thierry; Reynders, Truus; Van de Vondel, Iwein; Coppens, Luc; Depuydt, Tom; De Ridder, Mark; Storme, Guy

2010-02-21

The purpose of this note is to report the feasibility and clinical validation of an in-house developed MOSFET dosimetry system and describe an integrated non-destructive reset procedure. Off-the-shelf MOSFETs are connected to a common PC using an 18 bit/analogue-input and 16 bit/output data acquisition card. A reading algorithm was developed defining the zero-temperature-coefficient point (ZTC) to determine the threshold voltage. A wireless interface was established for ease of use. The reset procedure consists of an internal circuit generating a local heating induced by an electrical current. Sensitivity has been investigated as a function of bias voltage (0-9 V) to the gate. Dosimetric properties have been evaluated for 6 MV and 15 MV clinical photon beams and in vivo benchmarking was performed against thermoluminescence dosimeters (TLD) for conventional treatments (two groups of ten patients for each energy) and total body irradiation (TBI). MOSFETS were pre-irradiated with 20 Gy. Sensitivity of 0.08 mV cGy(-1) can be obtained for 200 cGy irradiations at 5 V bias voltage. Ten consecutive measurements at 200 cGy yield a SD of 2.08 cGy (1.05%). Increasing the dose in steps from 5 cGy to 1000 cGy yields a 1.00 Pearson correlation coefficient and agreement within 2.0%. Dose rate dependence (160-800 cGy min(-1)) was within 2.5%, temperature dependence within 2.0% (25-37 degrees C). A strong angular dependence has been observed for gantry incidences exceeding +/-30 degrees C. Dose response is stable up to 50 Gy (saturation occurs at approximately 90 Gy), which is used as threshold dose before resetting the MOSFET. An average measured-over-calculated dose ratio within 1.05 (SD: 0.04) has been obtained in vivo. TBI midplane-dose assessed by entrance and exit dose measurements agreed within 1.9% with ionization chamber in phantom, and within 1.0% with TLD in vivo. An in-house developed resettable MOSFET-based dosimetry system is proposed. The system has been validated and is currently used for in vivo entrance dose measurement in clinical routine for simple (open field) treatment configurations.

NOTE: An in-house developed resettable MOSFET dosimeter for radiotherapy

NASA Astrophysics Data System (ADS)

Verellen, Dirk; Van Vaerenbergh, Sven; Tournel, Koen; Heuninckx, Karina; Joris, Laurent; Duchateau, Michael; Linthout, Nadine; Gevaert, Thierry; Reynders, Truus; Van de Vondel, Iwein; Coppens, Luc; Depuydt, Tom; De Ridder, Mark; Storme, Guy

2010-02-01

The purpose of this note is to report the feasibility and clinical validation of an in-house developed MOSFET dosimetry system and describe an integrated non-destructive reset procedure. Off-the-shelf MOSFETs are connected to a common PC using an 18 bit/analogue-input and 16 bit/output data acquisition card. A reading algorithm was developed defining the zero-temperature-coefficient point (ZTC) to determine the threshold voltage. A wireless interface was established for ease of use. The reset procedure consists of an internal circuit generating a local heating induced by an electrical current. Sensitivity has been investigated as a function of bias voltage (0-9 V) to the gate. Dosimetric properties have been evaluated for 6 MV and 15 MV clinical photon beams and in vivo benchmarking was performed against thermoluminescence dosimeters (TLD) for conventional treatments (two groups of ten patients for each energy) and total body irradiation (TBI). MOSFETS were pre-irradiated with 20 Gy. Sensitivity of 0.08 mV cGy-1 can be obtained for 200 cGy irradiations at 5 V bias voltage. Ten consecutive measurements at 200 cGy yield a SD of 2.08 cGy (1.05%). Increasing the dose in steps from 5 cGy to 1000 cGy yields a 1.00 Pearson correlation coefficient and agreement within 2.0%. Dose rate dependence (160-800 cGy min-1) was within 2.5%, temperature dependence within 2.0% (25-37° C). A strong angular dependence has been observed for gantry incidences exceeding ±30° C. Dose response is stable up to 50 Gy (saturation occurs at approximately 90 Gy), which is used as threshold dose before resetting the MOSFET. An average measured-over-calculated dose ratio within 1.05 (SD: 0.04) has been obtained in vivo. TBI midplane-dose assessed by entrance and exit dose measurements agreed within 1.9% with ionization chamber in phantom, and within 1.0% with TLD in vivo. An in-house developed resettable MOSFET-based dosimetry system is proposed. The system has been validated and is currently used for in vivo entrance dose measurement in clinical routine for simple (open field) treatment configurations.

Risk factors affecting fatal bus accident severity: Their impact on different types of bus drivers.

PubMed

Feng, Shumin; Li, Zhenning; Ci, Yusheng; Zhang, Guohui

2016-01-01

While the bus is generally considered to be a relatively safe means of transportation, the property losses and casualties caused by bus accidents, especially fatal ones, are far from negligible. The reasons for a driver to incur fatalities are different in each case, and it is essential to discover the underlying risk factors of bus fatality severity for different types of drivers in order to improve bus safety. The current study investigates the underlying risk factors of fatal bus accident severity to different types of drivers in the U.S. by estimating an ordered logistic model. Data for the analysis are retrieved from the Buses Involved in Fatal Accidents (BIFA) database from the USA for the years 2006-2010. Accidents are divided into three levels by counting their equivalent fatalities, and the drivers are classified into three clusters by the K-means cluster analysis. The analysis shows that some risk factors have the same impact on different types of drivers, they are: (a) season; (b) day of week; (c) time period; (d) number of vehicles involved; (e) land use; (f) manner of collision; (g) speed limit; (h) snow or ice surface condition; (i) school bus; (j) bus type and seating capacity; (k) driver's age; (l) driver's gender; (m) risky behaviors; and (n) restraint system. Results also show that some risk factors only have impact on the "young and elder drivers with history of traffic violations", they are: (a) section type; (b) number of lanes per direction; (c) roadway profile; (d) wet road surface; and (e) cyclist-bus accident. Notably, history of traffic violations has different impact on different types of bus drivers. Copyright © 2015 Elsevier Ltd. All rights reserved.

Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics

NASA Astrophysics Data System (ADS)

Kyoung, Sinsu; Hong, Young-sung; Lee, Myung-hwan; Nam, Tae-jin

2018-02-01

In order to enhance specific on-resistance (Ron,sp), the trench gate structure was also introduced into 4H-SiC MOSFET as Si MOSFET. But the 4H-SiC trench gate has worse off-state characteristics than the Si trench gate due to the incomplete gate oxidation process (Šimonka et al., 2017). In order to overcome this problem, P-shielding trench gate MOSFET (TMOS) was proposed and researched in previous studies. But P-shielding has to be designed with minimum design rule in order to protect gate oxide effectively. P-shielding TMOS also has the drawback of on-state characteristics degradation corresponding to off state improvement for minimum design rule. Therefore optimized design is needed to satisfy both on and off characteristics. In this paper, the design parameters were analyzed and optimized so that the 4H-SiC P-shielding TMOS satisfies both on and off characteristics. Design limitations were proposed such that P-shielding is able to defend the gate oxide. The P-shielding layer should have the proper junction depth and concentration to defend the electric field to gate oxide during the off-state. However, overmuch P-shielding junction depth disturbs the on-state current flow, a problem which can be solved by increasing the trench depth. As trench depth increases, however, the breakdown voltage decreases. Therefore, trench depth should be designed with due consideration for on-off characteristics. For this, design conditions and modeling were proposed which allow P-shielding to operate without degradation of on-state characteristics. Based on this proposed model, the 1200 V 4H-SiC P-shielding trench gate MOSFET was designed and optimized.

Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1-(micron)meter MOSFET's with Epitaxial and (delta)-Doped Channels

NASA Technical Reports Server (NTRS)

Asenov, Asen; Saini, Subhash

1999-01-01

A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub-0.1-(micron)meter MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1-(micron)meter generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with uniformly doped channel. According to our atomistic results, the doping concentration dependence of the random dopant-induced threshold voltage fluctuations in conventional devices is stronger than the analytically predicted fourth-root dependence. As a result of this, the scaling of such devices will be restricted by the "intrinsic" random dopant-induced fluctuations earlier than anticipated. Our atomistic simulations confirm that the introduction of a thin epitaxial layer in the MOSFET's channel can efficiently suppress the random dopant-induced threshold voltage fluctuations in sub-0.1-(micron)meter devices. For the first time, we observe an "anomalous" reduction in the threshold voltage fluctuations with an increase in the doping concentration behind the epitaxial channel, which we attribute to screening effects. Also, for the first time we study the effect of a delta-doping, positioned behind the epitaxial layer, on the intrinsic threshold voltage fluctuations. Above a certain thickness of epitaxial layer, we observe a pronounced anomalous decrease in the threshold voltage fluctuation with the increase of the delta doping. This phenomenon, which is also associated with screening, enhances the importance of the delta doping in the design of properly scaled fluctuation-resistant sub-0.1-(micron)meter MOSFET's. Index Terms-Doping, fluctuations, MOSFET, semiconductor device simulation, silicon devices, threshold.

Impact of underlap and mole-fraction on RF performance of strained-Si/Si1-xGex/strained-Si DG MOSFETs

NASA Astrophysics Data System (ADS)

Dutta, Arka; Koley, Kalyan; Sarkar, Chandan K.

2014-11-01

In this paper, a systematic RF performance analysis of double-gate strained silicon (DGSS) nMOSFETs is presented. The analysis is focused upon impact of Germanium mole-fraction variation on RF performance of underlap engineered DGSS nMOSFET. The RF performance of the device is analysed as a function of intrinsic RF figure of merits (FOMs) including non-quasi static effects (NQS). The RF FOMs are represented by the intrinsic gate to source/drain capacitance (Cgs and Cgd) and resistance (Rgs and Rgd), the transport delay (τm), the intrinsic inductance (Lsd), the cut-off frequency (fT), and the maximum oscillation frequency (fMAX). The results of the study suggested a significant improvement in the device performance, up to 40% increase in Germanium mole fraction (χ).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mudholkar, Mihir; Ahmed, Shamin; Ericson, Milton Nance

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25 degrees C to 225 degrees C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented whichmore » requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.« less

INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Hu, Guang-Xi; Wang, Ling-Li; Liu, Ran; Tang, Ting-Ao; Qiu, Zhi-Jun

2010-10-01

As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate (SG) nMOSFET is developed. The Schrödinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The centroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Goldsman, Neil; Liu, Sandra; Titus, Jeffrey L.; Ladbury, Raymond L.; Kim, Hak S.; Phan, Anthony M.; LaBel, Kenneth A.; Zafrani, Max; Sherman, Phillip

2012-01-01

The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.

[A novel serial port auto trigger system for MOSFET dose acquisition].

PubMed

Luo, Guangwen; Qi, Zhenyu

2013-01-01

To synchronize the radiation of microSelectron-HDR (Nucletron afterloading machine) and measurement of MOSFET dose system, a trigger system based on interface circuit was designed and corresponding monitor and trigger program were developed on Qt platform. This interface and control system was tested and showed stable operate and reliable work. This adopted serial port detect technique may expand to trigger application of other medical devices.

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.;

A Distance Detector with a Strip Magnetic MOSFET and Readout Circuit.

PubMed

Sung, Guo-Ming; Lin, Wen-Sheng; Wang, Hsing-Kuang

2017-01-10

This paper presents a distance detector composed of two separated metal-oxide semiconductor field-effect transistors (MOSFETs), a differential polysilicon cross-shaped Hall plate (CSHP), and a readout circuit. The distance detector was fabricated using 0.18 μm 1P6M Complementary Metal-Oxide Semiconductor (CMOS) technology to sense the magnetic induction perpendicular to the chip surface. The differential polysilicon CSHP enabled the magnetic device to not only increase the magnetosensitivity but also eliminate the offset voltage generated because of device mismatch and Lorentz force. Two MOSFETs generated two drain currents with a quadratic function of the differential Hall voltages at CSHP. A readout circuit-composed of a current-to-voltage converter, a low-pass filter, and a difference amplifier-was designed to amplify the current difference between two drains of MOSFETs. Measurements revealed that the electrostatic discharge (ESD) could be eliminated from the distance sensor by grounding it to earth; however, the sensor could be desensitized by ESD in the absence of grounding. The magnetic influence can be ignored if the magnetic body (human) stays far from the magnetic sensor, and the measuring system is grounded to earth by using the ESD wrist strap (Strap E-GND). Both 'no grounding' and 'grounding to power supply' conditions were unsuitable for measuring the induced Hall voltage.

Analytical model of threshold voltage degradation due to localized charges in gate material engineered Schottky barrier cylindrical GAA MOSFETs

NASA Astrophysics Data System (ADS)

Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2016-10-01

The threshold voltage degradation due to the hot carrier induced localized charges (LC) is a major reliability concern for nanoscale Schottky barrier (SB) cylindrical gate all around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs). The degradation physics of gate material engineered (GME)-SB-GAA MOSFETs due to LC is still unexplored. An explicit threshold voltage degradation model for GME-SB-GAA-MOSFETs with the incorporation of localized charges (N it) is developed. To accurately model the threshold voltage the minimum channel carrier density has been taken into account. The model renders how +/- LC affects the device subthreshold performance. One-dimensional (1D) Poisson’s and 2D Laplace equations have been solved for two different regions (fresh and damaged) with two different gate metal work-functions. LCs are considered at the drain side with low gate metal work-function as N it is more vulnerable towards the drain. For the reduction of carrier mobility degradation, a lightly doped channel has been considered. The proposed model also includes the effect of barrier height lowering at the metal-semiconductor interface. The developed model results have been verified using numerical simulation data obtained by the ATLAS-3D device simulator and excellent agreement is observed between analytical and simulation results.

Driver Support Functions under Resource-Limited Situations

NASA Astrophysics Data System (ADS)

Inagaki, Toshiyuki; Itoh, Makoto; Nagai, Yoshitomo

This paper reports results of an experiment with a driving simulator in order to answer the following question: What type of support should be given to an automobile driver when it is determined, via some monitoring method, that the driver's situation awareness may not be appropriate to a given traffic condition? This paper compares (a) warning type support in which an auditory warning is given to the driver to enhance situation awareness and (b) action type support in which an autonomous safety control is executed as a soft protection for avoiding an accident. Although the both types of driver support are effective, the former sometimes fail to assure safety, which suggests a limitation of the human locus of control assumption, while efficacy of the latter may be degraded by an incorrect human reasoning that can happen under uncertainty. This paper discusses viewpoints needed in the design of systems for supporting drivers in resource-limited situations in which information or time available for a driver is limited in a given traffic condition.

Driving anger and its relationships with type A behavior patterns and trait anger: Differences between professional and non-professional drivers

PubMed Central

Feng, Zhongxiang; Yang, Miaomiao; Ma, Changxi; Jiang, Kang; Lei, Yewei; Huang, Wenjuan; Huang, Zhipeng; Zhan, Jingjing; Zhou, Muxiong

2017-01-01

The present study examined the types of situations that caused Chinese professional and non-professional drivers to become angry and investigated the differences in driving-elicited anger, considering the influences of type A behavior pattern and trait anger between the two groups. The 20-item revised Driving Anger Scale (DAS) was used to assess a sample of 232 drivers (57% professional, 43% non-professional). The non-professional drivers reported significantly higher levels of anger than the professional drivers on the overall Driving Anger Scale (DAS) and the traffic obstructions and discourtesy subscales. In both groups, the preferred driving speeds were positively related to driving anger. Furthermore, drivers with a type A personality exhibited higher overall driving anger scores and higher anger scores in response to traffic obstructions and slow driving than drivers with a type B personality. Trait anger was significantly related to driving anger in both groups. In the non-professional group, type A behavior patterns (TABPs) and time hurry (TH) were positively correlated with anger evoked by slow driving. In the professional group, TABPs, TH and competitive hostility (CH) were positively related to driving anger, and the TABPs exerted an indirect effect on driving anger by mediating the influence of trait anger. Overall, these findings provide a theoretical basis for implementing targeted interventions for driving anger in both professional and non-professional drivers. PMID:29253004

Driver Behavioral Changes through Interactions with an Automatic Brake System for Collision Avoidance

NASA Astrophysics Data System (ADS)

Itoh, Makoto; Fujiwara, Yusuke; Inagaki, Toshiyuki

This paper discusses driver's behavioral changes as a result of driver's use of an automatic brake system for preventing a rear-end collision from occurring. Three types of automatic brake systems are investigated in this study. Type 1 brake system applies a strong automatic brake when a collision is very imminent. Type 2 brake system initiates brake operation softly when a rear-end crash may be anticipated. Types 1 and 2 are for avoidance of a collision. Type 3 brake system, on the other hand, applies a strong automatic brake to reduce the damage when a collision can not be avoided. An experiment was conducted with a driving simulator in order to analyze the driver's possible behavioral changes. The results showed that the time headway (THW) during car following phase was reduced by use of an automatic brake system of any type. The inverse of time to collision (TTC), which is an index of the driver's brake timing, increased by use of Type 1 brake system when the deceleration rate of the lead vehicle was relatively low. However, the brake timing did not change when the drivers used Type 2 or 3 brake system. As a whole, dangerous behavioral changes, such as overreliance on a brake system, were not observed for either type of brake system.

The effects of mutational processes and selection on driver mutations across cancer types.

PubMed

Temko, Daniel; Tomlinson, Ian P M; Severini, Simone; Schuster-Böckler, Benjamin; Graham, Trevor A

2018-05-10

Epidemiological evidence has long associated environmental mutagens with increased cancer risk. However, links between specific mutation-causing processes and the acquisition of individual driver mutations have remained obscure. Here we have used public cancer sequencing data from 11,336 cancers of various types to infer the independent effects of mutation and selection on the set of driver mutations in a cancer type. First, we detect associations between a range of mutational processes, including those linked to smoking, ageing, APOBEC and DNA mismatch repair (MMR) and the presence of key driver mutations across cancer types. Second, we quantify differential selection between well-known alternative driver mutations, including differences in selection between distinct mutant residues in the same gene. These results show that while mutational processes have a large role in determining which driver mutations are present in a cancer, the role of selection frequently dominates.

Differences in state drug testing and reporting by driver type in U.S. fatal traffic crashes.

PubMed

Slater, Megan E; Castle, I-Jen P; Logan, Barry K; Hingson, Ralph W

2016-07-01

Driving under the influence of drugs, including marijuana, has become more prevalent in recent years despite local, state, and federal efforts to prevent such increases. The Fatality Analysis Reporting System (FARS) is the primary source of drugged driving data for fatal crashes in the United States but lacks the completeness required to calculate unbiased estimates of drug use among drivers involved in fatal crashes. This article uses the 2013 FARS dataset to present differences in state drug testing rates by driver type, driver fault type, and state-level factors; discusses limitations related to analysis and interpretation of drugged driving data; and offers suggestions for improvements that may enable appropriate use of FARS drug testing data in the future. Results showed that state drug testing rates were highest among drivers who died at the scene of the crash (median=70.8%) and drivers who died and were at fault in the crash (median=64.4%). The lowest testing rates were seen among surviving drivers who were not transported to a hospital (median=14.0%) and surviving drivers who were not at fault in the crash (median=10.0%). Drug testing rates differed by state blood alcohol content (BAC) testing rate across all driver types and driver fault types, and in general, states that tested a higher percentage of drivers for BAC had higher drug testing rates. Testing rates might be increased through standardization and mandatory testing policies. FARS data users should continue to be cautious about the limitations of using currently available data to quantify drugged driving. More efforts are needed to improve drug testing and reporting practices, and more research is warranted to establish drug concentration levels at which driving skills become impaired. Copyright © 2016 Elsevier Ltd. All rights reserved.

I-V Characteristics of a Static Random Access Memory Cell Utilizing Ferroelectric Transistors

NASA Technical Reports Server (NTRS)

Laws, Crystal; Mitchell, Cody; Hunt, Mitchell; Ho, Fat D.; MacLeod, Todd C.

2012-01-01

I-V characteristics for FeFET different than that of MOSFET Ferroelectric layer features hysteresis trend whereas MOSFET behaves same for both increasing and decreasing VGS FeFET I-V characteristics doesn't show dependence on VDS A Transistor with different channel length and width as well as various resistance and input voltages give different results As resistance values increased, the magnitude of the drain current decreased.

MOSFET and MOS capacitor responses to ionizing radiation

NASA Technical Reports Server (NTRS)

Benedetto, J. M.; Boesch, H. E., Jr.

1984-01-01

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

Dose measurement based on threshold shift in MOSFET arrays in commercial SRAMS

NASA Technical Reports Server (NTRS)

Scheick, L. Z.; Swift, G.

2002-01-01

A new method using an array of MOS transistors isdescribed for measuring dose absorbed from ionizingradiation. Using the array of MOSFETs in a SRAM, a direct measurement of the number of MOS cells which change as a function of applied bias on the SRAM. Since the input and output of a SRAM used as a dosimeter is completely digital, the measurement of dose is easily accessible by a remote processing system.

High voltage MOSFET devices and methods of making the devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+more » region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.« less

DETECTORS AND EXPERIMENTAL METHODS: Equivalent properties of single event burnout induced by different sources

NASA Astrophysics Data System (ADS)

Yang, Shi-Yu; Cao, Zhou; Da, Dao-An; Xue, Yu-Xiong

2009-05-01

The experimental results of single event burnout induced by heavy ions and 252Cf fission fragments in power MOSFET devices have been investigated. It is concluded that the characteristics of single event burnout induced by 252Cf fission fragments is consistent to that in heavy ions. The power MOSFET in the “turn-off" state is more susceptible to single event burnout than it is in the “turn-on" state. The thresholds of the drain-source voltage for single event burnout induced by 173 MeV bromine ions and 252Cf fission fragments are close to each other, and the burnout cross section is sensitive to variation of the drain-source voltage above the threshold of single event burnout. In addition, the current waveforms of single event burnouts induced by different sources are similar. Different power MOSFET devices may have different probabilities for the occurrence of single event burnout.

High voltage MOSFET devices and methods of making the devices

DOEpatents

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

2015-12-15

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

Total ionizing dose effect and damage mechanism on saturation output voltage of charge coupled device

NASA Astrophysics Data System (ADS)

Wen, Lin; Li, Yu-dong; Guo, Qi; Wang, Chao-min

2018-02-01

Total ionizing dose effect is a major threat to space applications of CCD, which leads to the decrease of CCD saturation output voltage and the increase of dark signal. This paper investigated CCD and its readout circuit for experimental samples of different channel width to length ratio of MOSFET, and readout circuit amplifier, and CCD. The irradiation source was 60Co- gamma ray. through testing the parameters degradation of MOSFET and amplifier degradation, the generation and annealing law of irradiation induced defects in MOS single tube are analyzed. Combined with the radiation effect of amplifier and CCD, The correlation of radiation damage of the MOSFET and the readout circuit amplifier and CCD parameter degradation is established. Finally, this paper reveals the physical mechanism of ionizing radiation damage of the readout circuit. The research results provide a scientific basis for the selection of anti-radiation technology and structure optimization of domestic CCD.

Kink effect in ultrathin FDSOI MOSFETs

NASA Astrophysics Data System (ADS)

Park, H. J.; Bawedin, M.; Choi, H. G.; Cristoloveanu, S.

2018-05-01

Systematic experiments demonstrate the presence of the kink effect even in FDSOI MOSFETs. The back-gate bias controls the kink effect via the formation of a back accumulation channel. The kink is more or less pronounced according to the film thickness and channel length. However, in ultrathin (<10 nm) and/or very short transistors (L < 50 nm), the kink is totally absent as a consequence of super-coupling effect. For the first time, thanks to the availability of body contacts, the body potential is probed to evidence the impact of majority carrier accumulation and drain pulse duration on the kink effect onset. He is currently working toward the Ph.D. degree in FDSOI device characterization and simulation at a laboratory of IMEP-lahc, Université Grenoble Alpes, Minatec, Grenoble, France. His research interests include residual floating body effects, electrical characterization, and device simulation for ultra FDSOI MOSFETs.

Exploring the Short-Channel Characteristics of Asymmetric Junctionless Double-Gate Silicon-on-Nothing MOSFET

NASA Astrophysics Data System (ADS)

Saha, Priyanka; Banerjee, Pritha; Dash, Dinesh Kumar; Sarkar, Subir Kumar

2018-03-01

This paper presents an analytical model of an asymmetric junctionless double-gate (asymmetric DGJL) silicon-on-nothing metal-oxide-semiconductor field-effect transistor (MOSFET). Solving the 2-D Poisson's equation, the expressions for center potential and threshold voltage are calculated. In addition, the response of the device toward the various short-channel effects like hot carrier effect, drain-induced barrier lowering and threshold voltage roll-off has also been examined along with subthreshold swing and drain current characteristics. Performance analysis of the present model is also demonstrated by comparing its short-channel behavior with conventional DGJL MOSFET. The effect of variation of the device features due to the variation of device parameters is also studied. The simulated results obtained using 2D device simulator, namely ATLAS, are in good agreement with the analytical results, hence validating our derived model.

Estimation of absorbed doses from paediatric cone-beam CT scans: MOSFET measurements and Monte Carlo simulations.

PubMed

Kim, Sangroh; Yoshizumi, Terry T; Toncheva, Greta; Frush, Donald P; Yin, Fang-Fang

2010-03-01

The purpose of this study was to establish a dose estimation tool with Monte Carlo (MC) simulations. A 5-y-old paediatric anthropomorphic phantom was computed tomography (CT) scanned to create a voxelised phantom and used as an input for the abdominal cone-beam CT in a BEAMnrc/EGSnrc MC system. An X-ray tube model of the Varian On-Board Imager((R)) was built in the MC system. To validate the model, the absorbed doses at each organ location for standard-dose and low-dose modes were measured in the physical phantom with MOSFET detectors; effective doses were also calculated. In the results, the MC simulations were comparable to the MOSFET measurements. This voxelised phantom approach could produce a more accurate dose estimation than the stylised phantom method. This model can be easily applied to multi-detector CT dosimetry.

High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts.

PubMed

Burchhart, T; Zeiner, C; Hyun, Y J; Lugstein, A; Hochleitner, G; Bertagnolli, E

2010-10-29

Ge nanowires (NWs) about 2 µm long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH(4) as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu(3)Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga(+) implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.

Noise and linearity optimization methods for a 1.9GHz low noise amplifier.

PubMed

Guo, Wei; Huang, Da-Quan

2003-01-01

Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Theoretical analysis and simulation results showed that, for cascode structure LNAs, the first metallic oxide semiconductor field effect transistor (MOSFET) dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade-offs. The 1.9GHz Complementary Metal-Oxide-Semiconductor (CMOS) LNA simulation results are also given as an application of the developed theory.

Signal Processing for Wireless Communication MIMO System with Nano- Scaled CSDG MOSFET based DP4T RF Switch.

PubMed

Srivastava, Viranjay M

2015-01-01

In the present technological expansion, the radio frequency integrated circuits in the wireless communication technologies became useful because of the replacement of increasing number of functions, traditional hardware components by modern digital signal processing. The carrier frequencies used for communication systems, now a day, shifted toward the microwave regime. The signal processing for the multiple inputs multiple output wireless communication system using the Metal- Oxide-Semiconductor Field-Effect-Transistor (MOSFET) has been done a lot. In this research the signal processing with help of nano-scaled Cylindrical Surrounding Double Gate (CSDG) MOSFET by means of Double- Pole Four-Throw Radio-Frequency (DP4T RF) switch, in terms of Insertion loss, Isolation, Reverse isolation and Inter modulation have been analyzed. In addition to this a channel model has been presented. Here, we also discussed some patents relevant to the topic.

A Wide-Range Tunable Level-Keeper Using Vertical Metal-Oxide-Semiconductor Field-Effect Transistors for Current-Reuse Systems

NASA Astrophysics Data System (ADS)

Tanoi, Satoru; Endoh, Tetsuo

2012-04-01

A wide-range tunable level-keeper using vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed for current-reuse analog systems. The design keys for widening tunable range of the operation are a two-path feed-back and a vertical MOSFET with back-bias-effect free. The proposed circuit with the vertical MOSFETs shows the 1.23-V tunable-range of the input level with the 2.4-V internal-supply voltage (VDD) in the simulation. This tunable-range of the proposed circuit is 4.7 times wider than that of the conventional. The achieved current efficiency of the proposed level-keeper is 66% at the 1.2-V output with the 2.4-V VDD. This efficiency of the proposed circuit is twice higher than that of the traditional voltage down converter.

Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakaike, Kohei; Akazawa, Muneki; Nakamura, Shogo

2013-12-02

A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a meniscus force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a meniscus force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 10{sup 8} and a high field-effect mobilitymore » of 609 cm{sup 2} V{sup −1} s{sup −1}.« less

Area efficient layout design of CMOS circuit for high-density ICs

NASA Astrophysics Data System (ADS)

Mishra, Vimal Kumar; Chauhan, R. K.

2018-01-01

Efficient layouts have been an active area of research to accommodate the greater number of devices fabricated on a given chip area. In this work a new layout of CMOS circuit is proposed, with an aim to improve its electrical performance and reduce the chip area consumed. The study shows that the design of CMOS circuit and SRAM cells comprising tapered body reduced source fully depleted silicon on insulator (TBRS FD-SOI)-based n- and p-type MOS devices. The proposed TBRS FD-SOI n- and p-MOSFET exhibits lower sub-threshold slope and higher Ion to Ioff ratio when compared with FD-SOI MOSFET and FinFET technology. Other parameters like power dissipation, delay time and signal-to-noise margin of CMOS inverter circuits show improvement when compared with available inverter designs. The above device design is used in 6-T SRAM cell so as to see the effect of proposed layout on high density integrated circuits (ICs). The SNM obtained from the proposed SRAM cell is 565 mV which is much better than any other SRAM cell designed at 50 nm gate length MOS device. The Sentaurus TCAD device simulator is used to design the proposed MOS structure.

Versatile tunable current-mode universal biquadratic filter using MO-DVCCs and MOSFET-based electronic resistors.

PubMed

Chen, Hua-Pin

2014-01-01

This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.

PubMed

Mohd Razip Wee, Mohd F; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y

2013-01-01

A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm(2)/Vs are achieved for the gate length and width of 0.2 µm and 30 µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10(-8) A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

PubMed Central

Mohd Razip Wee, Mohd F.; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y.

2013-01-01

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. PMID:24367548

Versatile Tunable Current-Mode Universal Biquadratic Filter Using MO-DVCCs and MOSFET-Based Electronic Resistors

PubMed Central

2014-01-01

This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design. PMID:24982963

The effects of nuclear radiation on Schottky power diodes and power MOSFETs

NASA Astrophysics Data System (ADS)

Kulisek, Jonathan Andrew

NASA is exploring the potential use of nuclear reactors as power sources for future space missions. These missions will require electrical components, consisting of power circuits and semiconductor devices, to be placed in close vicinity to the reactor, in the midst of a high neutron and gamma-ray radiation field. Therefore, the primary goal of this research is to examine the effects of a mixed neutron and gamma-ray radiation field on the static and dynamic electrical performance of power Schottky diodes and power MOSFETs in order to support future design efforts of radiation-hard power semiconductors and circuits. In order to accomplish this, non-radiation hardened commercial power Si and SiC Schottky power diodes, manufactured by International Rectifier and Cree, respectively, were irradiated in the Ohio State University Research Reactor (OSURR), and their degradation in electrical performance was observed using I-V characterization. Key electrical performance parameters were extracted using least squares curve-fits of the corresponding semiconductor physics model equations to the experimental data, and these electrical performance parameters were used to model the diodes in PSpice. A half-wave rectifier circuit containing Cree SiC Schottky diodes, rated for 5 A DC forward current and 1200 V DC blocking voltage, was also tested and modeled in order to determine and analyze changes in overall circuit performance and diode power dissipation as a function of radiation dose. Also, electrical components will be exposed to charged particle radiation from space, such as high energy protons in the Van Allen Radiation Belts surrounding earth. Therefore, the results from this study, with respect to the Si and SiC Schottky power diodes, were compared to results published by NASA, which had tested the same diode models at the Indiana University Cyclotron Facility (IUCF) with a 203 MeV proton beam. The comparison was made on the basis of displacement damage dose, calculated with the aid of MCNPX 2.6.0, a charged particle transport code. From the results of the calculation, it was determined that the response of both the Si and SiC diodes to the OSURR neutron and gamma-ray radiation field could be used to predict the response of the same diodes to the 203 MeV proton beam to a reasonable extent, relative to other published studies employing the same model. In addition, 100 V and 500 V power MOSFETs were irradiated in the OSURR, and their degradation in electrical performance was observed using I-V characterization. Changes in threshold voltage, transconductance parameter, and on-state resistance were observed for both 100 V and 500 V MOSFETs and were attributed to radiation-induced degradation of the SiO2 gate, Si-SiO2 interface, and n- drift layer. Furthermore, diodes and MOSFETs were irradiated and tested in basic power electronic circuits in order to determine the overall circuit response, as well as the dynamic electrical performance characteristics of the diodes and MOSFETs as they are switched from conducting (on) to non-conducting (off) states. All of the Schottky diodes maintained their voltage-blocking capability in the tested circuits, despite substantial radiation-induced increases in series resistance. Also, as radiation dose increased, an increase was observed in the turn-off delay times and turn-off times of the MOSFETs coupled with a decrease in turn-on delay time, which caused an increase in the output voltage in the buck and boost converters of which the MOSFETs were a part. Furthermore, the power dissipation in the MOSFETs during conduction and the over-voltage turn-off transient increased as a function of radiation dose, while the power dissipation during turn-on was essentially unaffected by the radiation.

An Investigation of DC-DC Converter Power Density Using Si and SiC MOSFETS

DTIC Science & Technology

2010-05-07

submarine or small surface combatant, volumetric constraints quickly become extremely prohibitive. Dedicating generators for high power loads takes...thermal compounds were applied to the MOSFET-heat sink interface. For the Si APT26F120B2, MG Chemicals TC-450ML thermal epoxy was used to connect the... submarines , bus converter modules must be made optimally power dense in order to decrease volumetric requirements of the modules for a rated throughput

Nonvolatile flip-flop based on pseudo-spin-transistor architecture and its nonvolatile power-gating applications for low-power CMOS logic

NASA Astrophysics Data System (ADS)

Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi

2013-07-01

We computationally analyzed performance and power-gating (PG) ability of a new nonvolatile delay flip-flop (NV-DFF) based on pseudo-spin-MOSFET (PS-MOSFET) architecture using spin-transfer-torque magnetic tunnel junctions (STT-MTJs). The high-performance energy-efficient PG operations of the NV-DFF can be achieved owing to its cell structure employing PS-MOSFETs that can electrically separate the STT-MTJs from the ordinary DFF part of the NV-DFF. This separation also makes it possible that the break-even time (BET) of the NV-DFF is designed by the size of the PS-MOSFETs without performance degradation of the normal DFF operations. The effect of the area occupation ratio of the NV-DFFs to a CMOS logic system on the BET was also analyzed. Although the optimized BET was varied depending on the area occupation ratio, energy-efficient fine-grained PG with a BET of several sub-microseconds was revealed to be achieved. We also proposed microprocessors and system-on-chip (SoC) devices using nonvolatile hierarchical-memory systems wherein NV-DFF and nonvolatile static random access memory (NV-SRAM) circuits are used as fundamental building blocks. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations

NASA Astrophysics Data System (ADS)

Hosenfeld, Fabian; Horst, Fabian; Iñíguez, Benjamín; Lime, François; Kloes, Alexander

2017-11-01

Source-to-drain (SD) tunneling decreases the device performance in MOSFETs falling below the 10 nm channel length. Modeling quantum mechanical effects including SD tunneling has gained more importance specially for compact model developers. The non-equilibrium Green's function (NEGF) has become a state-of-the-art method for nano-scaled device simulation in the past years. In the sense of a multi-scale simulation approach it is necessary to bridge the gap between compact models with their fast and efficient calculation of the device current, and numerical device models which consider quantum effects of nano-scaled devices. In this work, an NEGF based analytical model for nano-scaled double-gate (DG) MOSFETs is introduced. The model consists of a closed-form potential solution of a classical compact model and a 1D NEGF formalism for calculating the device current, taking into account quantum mechanical effects. The potential calculation omits the iterative coupling and allows the straightforward current calculation. The model is based on a ballistic NEGF approach whereby backscattering effects are considered as second order effect in a closed-form. The accuracy and scalability of the non-iterative DG MOSFET model is inspected in comparison with numerical NanoMOS TCAD data for various channel lengths. With the help of this model investigations on short-channel and temperature effects are performed.

Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2016-10-01

For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

SU-E-T-600: In Vivo Dosimetry for Total Body and Total Marrow Irradiations with Optically Stimulated Luminescence Dosimeters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niedbala, M; Save, C; Cygler, J

Purpose: To evaluate the feasibility of using optically stimulated luminescence dosimeters (OSLDs) for in-vivo dosimetry of patients undergoing Total Body and Total Marrow Irradiations (TBI and TMI). Methods: TBI treatments of 12 Gy were delivered in 6 BID fractions with the patient on a moving couch under a static 10 MV beam (Synergy, Elekta). TMI treatments of 18 Gy in 9 BID fractions were planned and delivered using a 6 MV TomoTherapy unit (Accuray). To provide a uniform dose to the entire patient length, the treatment was split into 2 adjacent fields junctioned in the thigh region. Our standard clinicalmore » practice involves in vivo dosimetry with MOSFETs for each TBI fraction and TLDs for at least one fraction of the TMI treatment for dose verification. In this study we also used OSLDs. Individual calibration coefficients were obtained for the OSLDs based on irradiations in a solid water phantom to the dose of 50 cGy from Elekta Synergy 10 MV (TBI) and 6 MV (TMI) beams. Calibration coefficients were calculated based on the OSLDs readings taken 2 hrs post-irradiation. For in vivo dosimetry OSLDs were placed alongside MOSFETs for TBI patients and in approximately the same locations as the TLDs for TMI patients. OSLDs were read 2 hours post treatment and compared to the MOSFET and TLD results. Results: OSLD measured doses agreed within 5% with MOSFET and TLD results, with the exception of the junction region in the TMI patient due to very high dose gradient and difficulty of precise and reproducible detector placement. Conclusion: OSLDs are useful for in vivo dosimetry of TBI and TMI patients. The quick post-treatment readout is an advantage over TLDs, allowing the results to be obtained between BID fractions, while wireless detectors are advantageous over MOSFETs for treatments involving a moving couch.« less

Comparison of teen driver fatality rates by vehicle type in the United States.

PubMed

Trowbridge, Matthew J; McKay, Mary Pat; Maio, Ronald F

2007-10-01

To compare national fatality rates for teen drivers by vehicle type. Fatality rates were calculated for 16- to 19-year-old drivers by vehicle type using data from the Fatal Analysis Reporting System (1999-2003) and estimates of miles driven from the National Household Transportation Survey (2001). Relative fatality risks for teen drivers of sports utility vehicles (SUVs) and pickups were calculated using passenger cars as a reference. Per vehicle mile driven, the fatality risk for both male and female teens driving SUVs was decreased relative to passenger car drivers (male teens: relative risk [RR], 0.33 [95% confidence interval [CI] = 0.29 to 0.37]; female teens: RR, 0.45 [95% CI = 0.34 to 0.59]). Fatality rates for male teens driving pickups were also lower per mile driven compared with male passenger car drivers (RR, 0.55 [95% CI = 0.51 to 0.60]). Fatality rates for female teens driving pickups and passenger cars were not statistically different but appear potentially higher for pickups (RR, 1.19 [95% CI = 0.98 to 1.44]). Both SUVs and pickups demonstrated significantly higher rates of fatal rollovers than passenger cars. Female adolescent drivers of SUVs and pickups were at particularly high risk for fatal rollovers per vehicle mile driven compared with passenger cars (SUV: RR, 1.88 [95% CI = 1.19 to 2.96]; pickup: RR, 3.42 [95% CI = 2.29 to 5.10]). Fatality rates for teen drivers vary significantly by vehicle type. From 1999 to 2003 in the United States, fatal rollovers were significantly more likely per mile driven for teen drivers of both SUVs and pickups compared with passenger cars. However, overall fatality rates (i.e., all crash types) for teen drivers of SUVs and male drivers of pickups were lower per mile driven than for teen drivers of passenger cars. The results of this ecological analysis cannot predict the individual-level fatality risk for teens driving different vehicle types. However, the significant variability in fatality rates among SUVs, pickups, and passenger cars seen at a population level suggests that vehicle choice should be further explored as a potentially modifiable risk factor in interventions to address teen driver safety.

First observations of power MOSFET burnout with high energy neutrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oberg, D.L.; Wert, J.L.; Normand, E.

Single event burnout was seen in power MOSFETs exposed to high energy neutrons. Devices with rated voltage {ge}400 volts exhibited burnout at substantially less than the rated voltage. Tests with high energy protons gave similar results. Burnout was also seen in limited tests with lower energy protons and neutrons. Correlations with heavy-ion data are discussed. Accelerator proton data gave favorable comparisons with burnout rates measured on the APEX spacecraft. Implications for burnout at lower altitudes are also discussed.

First observations of power MOSFET burnout with high energy neutrons

NASA Astrophysics Data System (ADS)

Oberg, D. L.; Wert, J. L.; Normand, E.; Majewski, P. P.; Wender, S. A.

1996-12-01

Single event burnout was seen in power MOSFETs exposed to high energy neutrons. Devices with rated voltage /spl ges/400 volts exhibited burnout at substantially less than the rated voltage. Tests with high energy protons gave similar results. Burnout was also seen in limited tests with lower energy protons and neutrons. Correlations with heavy-ion data are discussed. Accelerator proton data gave favorable comparisons with burnout rates measured on the APEX spacecraft. Implications for burnout at lower altitudes are also discussed.

Effect of Oxide Interface Roughness on the Threshold Voltage Fluctuations in Decanano MOSFETs with Ultrathin Gate Oxides

NASA Technical Reports Server (NTRS)

Asenov, Asen; Kaya, S.

2000-01-01

In this paper we use the Density Gradient (DG) simulation approach to study, in 3-D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2-D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the Quantum Mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples.

Analog synthesized fast-variable linear load

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

1991-01-01

A several kilowatt power level, fast-variable linear resistor was synthesized by using analog components to control the conductance of power MOSFETs. Risetimes observed have been as short as 500 ns with respect to the control signal and 1 to 2 microseconds with respect to the power source voltage. A variant configuration of this load that dissipates a constant power set by a control signal is indicated. Replacement of the MOSFETs by static induction transistors (SITs) to increase power handling, speed and radiation hardness is discussed.

MOSFET Power Controller

NASA Technical Reports Server (NTRS)

Mitchell, J.; Jones, K.

1986-01-01

High current and voltage controlled remotely. Remote Power Conroller includes two series-connected banks of parallel-connected MOSFET's to withstand high current and voltage. Voltage sharing between switch banks, low-impedance, gate-drive circuits used. Provided controlled range for turn on. Individually trimmable to insure simultaneous switching within few nanoseconds during both turn on and turn off. Control circuit for each switch bank and over-current trip circuit float independently and supplied power via transformer T1 from inverter. Control of floating stages by optocouplers.

49 CFR 380.109 - Driver testing.

Code of Federal Regulations, 2010 CFR

2010-10-01

....109 Driver testing. (a) Testing methods. The driver-student must pass knowledge and skills tests in... this part for the specific type of LCV training program being taught. (2) Instructors shall develop their own tests for the specific type of LCV-training program being taught, but those tests must be at...

49 CFR 380.109 - Driver testing.

Code of Federal Regulations, 2011 CFR

2011-10-01

....109 Driver testing. (a) Testing methods. The driver-student must pass knowledge and skills tests in... this part for the specific type of LCV training program being taught. (2) Instructors shall develop their own tests for the specific type of LCV-training program being taught, but those tests must be at...

49 CFR 380.109 - Driver testing.

Code of Federal Regulations, 2012 CFR

2012-10-01

....109 Driver testing. (a) Testing methods. The driver-student must pass knowledge and skills tests in... this part for the specific type of LCV training program being taught. (2) Instructors shall develop their own tests for the specific type of LCV-training program being taught, but those tests must be at...

49 CFR 380.109 - Driver testing.

Code of Federal Regulations, 2014 CFR

2014-10-01

....109 Driver testing. (a) Testing methods. The driver-student must pass knowledge and skills tests in... this part for the specific type of LCV training program being taught. (2) Instructors shall develop their own tests for the specific type of LCV-training program being taught, but those tests must be at...

49 CFR 380.109 - Driver testing.

Code of Federal Regulations, 2013 CFR

2013-10-01

....109 Driver testing. (a) Testing methods. The driver-student must pass knowledge and skills tests in... this part for the specific type of LCV training program being taught. (2) Instructors shall develop their own tests for the specific type of LCV-training program being taught, but those tests must be at...

Peripheral dose measurement in high-energy photon radiotherapy with the implementation of MOSFET.

PubMed

Vlachopoulou, Vassiliki; Malatara, Georgia; Delis, Harry; Theodorou, Kiki; Kardamakis, Dimitrios; Panayiotakis, George

2010-11-28

To study the peripheral dose (PD) from high-energy photon beams in radiotherapy using the metal oxide semiconductor field effect transistor (MOSFET) dose verification system. The radiation dose absorbed by the MOSFET detector was calculated taking into account the manufacturer's Correction Factor, the Calibration Factor and the threshold voltage shift. PD measurements were carried out for three different field sizes (5 cm × 5 cm, 10 cm × 10 cm and 15 cm × 15 cm) and for various depths with the source to surface distance set at 100 cm. Dose measurements were realized on the central axis and then at distances (1 to 18 cm) parallel to the edge of the field, and were expressed as the percentage PD (% PD) with respect to the maximum dose (d(max)). The accuracy of the results was evaluated with respect to a calibrated 0.3 cm(3) ionization chamber. The reproducibility was expressed in terms of standard deviation (s) and coefficient of variation. % PD is higher near the phantom surface and drops to a minimum at the depth of d(max), and then tends to become constant with depth. Internal scatter radiation is the predominant source of PD and the depth dependence is determined by the attenuation of the primary photons. Closer to the field edge, where internal scatter from the phantom dominates, the % PD increases with depth because the ratio of the scatter to primary increases with depth. A few centimeters away from the field, where collimator scatter and leakage dominate, the % PD decreases with depth, due to attenuation by the water. The % PD decreases almost exponentially with the increase of distance from the field edge. The decrease of the % PD is more than 60% and can reach up to 90% as the measurement point departs from the edge of the field. For a given distance, the % PD is significantly higher for larger field sizes, due to the increase of the scattering volume. Finally, the measured PD obtained with MOSFET is higher than that obtained with an ionization chamber with percentage differences being from 0.6% to 34.0%. However, when normalized to the central d(max) this difference is less than 1%. The MOSFET system, in the early stage of its life, has a dose measurement reproducibility of within 1.8%, 2.7%, 8.9% and 13.6% for 22.8, 11.3, 3.5 and 1.3 cGy dose assessments, respectively. In the late stage of MOSFET life the corresponding values change to 1.5%, 4.8%, 11.1% and 29.9% for 21.8, 2.9, 1.6 and 1.0 cGy, respectively. Comparative results acquired with the MOSFET and with an ionization chamber show fair agreement, supporting the suitability of this measurement for clinical in vivo dosimetry.

Peripheral dose measurement in high-energy photon radiotherapy with the implementation of MOSFET

PubMed Central

Vlachopoulou, Vassiliki; Malatara, Georgia; Delis, Harry; Theodorou, Kiki; Kardamakis, Dimitrios; Panayiotakis, George

2010-01-01

AIM: To study the peripheral dose (PD) from high-energy photon beams in radiotherapy using the metal oxide semiconductor field effect transistor (MOSFET) dose verification system. METHODS: The radiation dose absorbed by the MOSFET detector was calculated taking into account the manufacturer’s Correction Factor, the Calibration Factor and the threshold voltage shift. PD measurements were carried out for three different field sizes (5 cm × 5 cm, 10 cm × 10 cm and 15 cm × 15 cm) and for various depths with the source to surface distance set at 100 cm. Dose measurements were realized on the central axis and then at distances (1 to 18 cm) parallel to the edge of the field, and were expressed as the percentage PD (% PD) with respect to the maximum dose (dmax). The accuracy of the results was evaluated with respect to a calibrated 0.3 cm3 ionization chamber. The reproducibility was expressed in terms of standard deviation (s) and coefficient of variation. RESULTS: % PD is higher near the phantom surface and drops to a minimum at the depth of dmax, and then tends to become constant with depth. Internal scatter radiation is the predominant source of PD and the depth dependence is determined by the attenuation of the primary photons. Closer to the field edge, where internal scatter from the phantom dominates, the % PD increases with depth because the ratio of the scatter to primary increases with depth. A few centimeters away from the field, where collimator scatter and leakage dominate, the % PD decreases with depth, due to attenuation by the water. The % PD decreases almost exponentially with the increase of distance from the field edge. The decrease of the % PD is more than 60% and can reach up to 90% as the measurement point departs from the edge of the field. For a given distance, the % PD is significantly higher for larger field sizes, due to the increase of the scattering volume. Finally, the measured PD obtained with MOSFET is higher than that obtained with an ionization chamber with percentage differences being from 0.6% to 34.0%. However, when normalized to the central dmax this difference is less than 1%. The MOSFET system, in the early stage of its life, has a dose measurement reproducibility of within 1.8%, 2.7%, 8.9% and 13.6% for 22.8, 11.3, 3.5 and 1.3 cGy dose assessments, respectively. In the late stage of MOSFET life the corresponding values change to 1.5%, 4.8%, 11.1% and 29.9% for 21.8, 2.9, 1.6 and 1.0 cGy, respectively. CONCLUSION: Comparative results acquired with the MOSFET and with an ionization chamber show fair agreement, supporting the suitability of this measurement for clinical in vivo dosimetry. PMID:21179311

A 12 mV start-up converter using piezoelectric transformer for energy harvesting applications

NASA Astrophysics Data System (ADS)

Martinez, T.; Pillonnet, G.; Costa, F.

2016-11-01

This paper presents a novel topology of start-up converter for sub 100 mV thermal energy harvesting based on an Armstrong oscillator topology using a piezoelectric transformer (PT) and a normally-on MOSFET. Based on a Rosen-type PT and off-the-shelf components, the proposed startup topology begins to oscillate at 12 mV input voltage corresponding to a temperature gradient of 2°C and achieves 1 V output voltage with only 18 mV input voltage applied to the harvester.

Semiconductor technology program. Progress briefs

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1979-01-01

The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

Simulating the bio nanoelectronic interface

NASA Astrophysics Data System (ADS)

Millar, Campbell; Roy, Scott; Brown, Andrew R.; Asenov, Asen

2007-05-01

As the size of conventional nano-CMOS devices continues to shrink, they are beginning to approach the size of biologically relevant macromolecules such as ion channels. This, in concert with the increasing understanding of the behaviour of proteins in vivo, creates the potential for a revolution in the sensing, measurement and interaction with biological systems. In this paper we will demonstrate the theoretical possibility of directly coupling a nanoscale MOSFET with a model ion channel protein. This will potentially allow a much better understanding of the behaviour of biologically relevant molecules, since the measurement of the motion of charged particles can reveal a substantial amount of information about protein structure-function relationships. We can use the MOSFET's innate sensitivity to stray charge to detect the positions of single ions and, thus, better explore the dynamics of ion conduction in channel proteins. In addition, we also demonstrate that the MOSFET can be 'tuned' to sense current flow through channel proteins, thus providing, for the first time, a direct solid state/biological interface at the atomic level.

Increase in the Random Dopant Induced Threshold Fluctuations and Lowering in Sub 100 nm MOSFETs Due to Quantum Effects: A 3-D Density-Gradient Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Slavcheva, G.; Brown, A. R.; Davies, J. H.; Saini, S.

2000-01-01

In this paper we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub 100 nm MOSFETs. The simulations have been performed using a 3-D implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation approach. This results in a self-consistent 3-D quantum mechanical picture, which implies not only the vertical inversion layer quantisation but also the lateral confinement effects related to current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical dopant fluctuations, is an increase in both threshold voltage fluctuations and lowering. At the same time, the random dopant induced threshold voltage lowering partially compensates for the quantum mechanical threshold voltage shift in aggressively scaled MOSFETs with ultrathin gate oxides.

Technologies for suppressing charge-traps in novel p-channel Field-MOSFET with thick gate oxide

NASA Astrophysics Data System (ADS)

Miyoshi, Tomoyuki; Oshima, Takayuki; Noguchi, Junji

2015-05-01

High voltage laterally diffused MOS (LDMOS) FETs are widely used in analog applications. A Field-MOSFET with a thick gate oxide is one of the best ways of achieving a simpler design and smaller circuit footprint for high-voltage analog circuits. This paper focuses on an approach to improving the reliability of p-channel Field-MOSFETs. By introducing a fluorine implantation process and terminating fluorine at the LOCOS bird’s beak, the gate oxide breakdown voltage could be raised to 350 V at a high-slew rate and the negative bias temperature instability (NBTI) shift could be kept to within 15% over a product’s lifetime. By controlling the amount of charge in the insulating layer through improving the interlayer dielectric (ILD) deposition processes, a higher BVDSS of 370 V and 10-year tolerability of 300 V were obtained with an assisted reduced surface electric field (RESURF) effect. These techniques can supply an efficient solution for ensuring reliable high-performance applications.

Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

NASA Astrophysics Data System (ADS)

Lv, Yuanjie; Mo, Jianghui; Song, Xubo; He, Zezhao; Wang, Yuangang; Tan, Xin; Zhou, Xingye; Gu, Guodong; Guo, Hongyu; Feng, Zhihong

2018-05-01

Gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 110 nm and 220 nm, respectively. The gate recess was formed by dry plasma etching with Cr metal as the mask. The fabricated devices with a 25-nm HfO2 gate dielectric both showed a low off-state drain current of about 1.8 × 10-10 A/mm. The effects of recess depth on the electronic characteristics of Ga2O3 MOSFETs were investigated. Upon increasing the recess depth from 110 nm to 220 nm, the saturated drain current decreased from 20.7 mA/mm to 2.6 mA/mm, while the threshold voltage moved increased to +3 V. Moreover, the breakdown voltage increased from 122 V to 190 V. This is mainly because the inverted-trapezoidal gate played the role of a gate-field plate, which suppressed the peak electric field close to the gate.

Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-01-01

A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed Tunneling FET is extracted from a MOSFET structure by employing an additional electrode in the source region with an appropriate work function to induce holes in the N+ source region and hence makes it as a P+ source region. The electric field is derived which is utilized to extract the expression of the drain current by analytically integrating the band to band tunneling generation rate in the tunneling region based on the potential profile by solving the Poisson's equation. Through this model, the effects of the thin film thickness and gate voltage on the potential, the electric field, and the effects of the thin film thickness on the tunneling current can be studied. To validate our present model we use SILVACO ATLAS device simulator and the analytical results have been compared with it and found a good agreement.

Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFET.

PubMed

Dutta, Sangya; Kumar, Vinay; Shukla, Aditya; Mohapatra, Nihar R; Ganguly, Udayan

2017-08-15

Neuro-biology inspired Spiking Neural Network (SNN) enables efficient learning and recognition tasks. To achieve a large scale network akin to biology, a power and area efficient electronic neuron is essential. Earlier, we had demonstrated an LIF neuron by a novel 4-terminal impact ionization based n+/p/n+ with an extended gate (gated-INPN) device by physics simulation. Excellent improvement in area and power compared to conventional analog circuit implementations was observed. In this paper, we propose and experimentally demonstrate a compact conventional 3-terminal partially depleted (PD) SOI- MOSFET (100 nm gate length) to replace the 4-terminal gated-INPN device. Impact ionization (II) induced floating body effect in SOI-MOSFET is used to capture LIF neuron behavior to demonstrate spiking frequency dependence on input. MHz operation enables attractive hardware acceleration compared to biology. Overall, conventional PD-SOI-CMOS technology enables very-large-scale-integration (VLSI) which is essential for biology scale (~10 11 neuron based) large neural networks.

An Analysis of Young Driver Crash Types and the Associated Lifetime Care Cost in Victoria, Australia.

PubMed

Buckis, Samantha; Lenné, Mike G; Fitzharris, Michael

2015-01-01

The elevated crash involvement rate of young drivers is well documented. Given the higher crash risk of young drivers and the need for innovative policy and programs, it remains important to fully understand the type of crashes young drivers are involved in, and knowledge of the lifetime care cost of crashes can support effective policy development. The aim of this article is to document the number and type of young driver crashes, as well as the associated lifetime care cost over a 9-year period (2005-2013) in Victoria, Australia. In Victoria, Australia, the Transport Accident Commission (TAC) has legislated responsibility for road safety and the care of persons injured in road crashes, irrespective of fault. TAC claims data for the period 2005-2013 were used to document the number and type of young driver crashes. Lifetime care costs (past and future payment liabilities) were calculated by Taylor Fry actuarial consultancy. License and population data were used to define the crash involvement rate of young drivers. Over the 9-year period, 16,817 claims were lodged to the TAC by drivers 18-25 years of age following a crash. There were 646 fewer drivers aged 18-25 killed and injured in 2013, compared to 2005, representing an unadjusted change of -28.7% (-29.8% males; -28.4% females). The total lifetime care cost of young drivers killed and injured in Victoria for the period 2005-2013 was estimated to be AU$634 million (US$493 million). Differences between males and females, single- and multivehicle crashes, and fatalities and injuries were found to be statistically significant. Run-off-road crashes and crashes from opposing direction were overrepresented in the lifetime care costs for young driver claimants. Twenty-eight injured drivers were classified as high-severity claims. These 28 claimants require additional long-term care, which was estimated to be AU$219 million; of these 28, 24 were male (85.7%). The long-term care costs for these 28 drivers (0.16%) accounts for 34.5% of the total lifetime care cost of all 18- to 25-year-old injured drivers. By using no-fault lifetime care costs that account for medical and like expenses, rehabilitation, and social reintegration costs, a more accurate understanding of the cost of young driver crashes can be determined. Application of these costs to specific crash types highlights new priorities and opportunities for developing programs to reduce young driver crashes.

Measuring pacemaker dose: a clinical perspective.

PubMed

Studenski, Matthew T; Xiao, Ying; Harrison, Amy S

2012-01-01

Recently in our clinic, we have seen an increased number of patients presenting with pacemakers and defibrillators. Precautions are taken to develop a treatment plan that minimizes the dose to the pacemaker because of the adverse effects of radiation on the electronics. Here we analyze different dosimeters to determine which is the most accurate in measuring pacemaker or defibrillator dose while at the same time not requiring a significant investment in time to maintain an efficient workflow in the clinic. The dosimeters analyzed here were ion chambers, diodes, metal-oxide-semiconductor field effect transistor (MOSFETs), and optically stimulated luminescence (OSL) dosimeters. A simple phantom was used to quantify the angular and energy dependence of each dosimeter. Next, 8 patients plans were delivered to a Rando phantom with all the dosimeters located where the pacemaker would be, and the measurements were compared with the predicted dose. A cone beam computed tomography (CBCT) image was obtained to determine the dosimeter response in the kilovoltage energy range. In terms of the angular and energy dependence of the dosimeters, the ion chamber and diode were the most stable. For the clinical cases, all the dosimeters match relatively well with the predicted dose, although the ideal dosimeter to use is case dependent. The dosimeters, especially the MOSFETS, tend to be less accurate for the plans, with many lateral beams. Because of their efficiency, we recommend using a MOSFET or a diode to measure the dose. If a discrepancy is observed between the measured and expected dose (especially when the pacemaker to field edge is <10 cm), we recommend analyzing the treatment plan to see whether there are many lateral beams. Follow-up with another dosimeter rather than repeating multiple times with the same type of dosimeter. All dosimeters should be placed after the CBCT has been acquired. Copyright © 2012 American Association of Medical Dosimetrists. Published by Elsevier Inc. All rights reserved.

Measuring pacemaker dose: A clinical perspective

DOE Office of Scientific and Technical Information (OSTI.GOV)

Studenski, Matthew T., E-mail: matthew.studenski@jeffersonhospital.org; Xiao Ying; Harrison, Amy S.

2012-07-01

Recently in our clinic, we have seen an increased number of patients presenting with pacemakers and defibrillators. Precautions are taken to develop a treatment plan that minimizes the dose to the pacemaker because of the adverse effects of radiation on the electronics. Here we analyze different dosimeters to determine which is the most accurate in measuring pacemaker or defibrillator dose while at the same time not requiring a significant investment in time to maintain an efficient workflow in the clinic. The dosimeters analyzed here were ion chambers, diodes, metal-oxide-semiconductor field effect transistor (MOSFETs), and optically stimulated luminescence (OSL) dosimeters. Amore » simple phantom was used to quantify the angular and energy dependence of each dosimeter. Next, 8 patients plans were delivered to a Rando phantom with all the dosimeters located where the pacemaker would be, and the measurements were compared with the predicted dose. A cone beam computed tomography (CBCT) image was obtained to determine the dosimeter response in the kilovoltage energy range. In terms of the angular and energy dependence of the dosimeters, the ion chamber and diode were the most stable. For the clinical cases, all the dosimeters match relatively well with the predicted dose, although the ideal dosimeter to use is case dependent. The dosimeters, especially the MOSFETS, tend to be less accurate for the plans, with many lateral beams. Because of their efficiency, we recommend using a MOSFET or a diode to measure the dose. If a discrepancy is observed between the measured and expected dose (especially when the pacemaker to field edge is <10 cm), we recommend analyzing the treatment plan to see whether there are many lateral beams. Follow-up with another dosimeter rather than repeating multiple times with the same type of dosimeter. All dosimeters should be placed after the CBCT has been acquired.« less

Ultra high voltage MOS controlled 4H-SiC power switching devices

NASA Astrophysics Data System (ADS)

Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

2015-08-01

Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

An epidemiologic survey of road traffic accidents in Iran: analysis of driver-related factors.

PubMed

Moafian, Ghasem; Aghabeigi, Mohammad-Reza; Heydari, Seyed Taghi; Hoseinzadeh, Amin; Lankarani, Kamran Bagheri; Sarikhani, Yaser

2013-01-01

Road traffic accident (RTA) and its related injuries contribute to a significant portion of the burden of diseases in Iran. This paper explores the association between driver-related factors and RTA in the country. This cross-sectional study was conducted in Iran and all data regarding RTAs from March 20, 2010 to June 10, 2010 were obtained from the Traffic Police Department. We included 538 588 RTA records, which were classified to control for the main confounders: accident type, final cause of accident, time of accident and driver-related factors. Driver-related factors included sex, educational level, license type, type of injury, duration between accident and getting the driving license and driver's error type. A total of 538 588 drivers (91.83% male, sex ratio of almost 13:1) were involved in the RTAs. Among them 423 932 (78.71%) were uninjured; 224 818 (41.74%) had a diploma degree. Grade 2 driving license represented the highest proportion of all driving licenses (290 811, 54.00%). The greatest number of accidents took place at 12:00-13:59 (75 024, 13.93%). The proportion of drivers involved in RTAs decreased from 15.90% in the first year of getting a driving license to 3.13% after 10 years'of driving experience. Neglect of regulations was the commonest cause of traffic crashes (345 589, 64.17%). Non-observance of priority and inattention to the front were the most frequent final causes of death (138 175, 25.66% and 129 352, 24.02%, respectively). We found significant association between type of accident and sex, education, license type, time of accident, final cause of accident, driver's error as well as duration between accident and getting the driving license (all P less than 0.001). Our results will improve the traffic law enforcement measures, which will change inappropriate behavior of drivers and protect the least experienced road users.

Multiple logistic regression model of signalling practices of drivers on urban highways

NASA Astrophysics Data System (ADS)

Puan, Othman Che; Ibrahim, Muttaka Na'iya; Zakaria, Rozana

2015-05-01

Giving signal is a way of informing other road users, especially to the conflicting drivers, the intention of a driver to change his/her movement course. Other users are exposed to hazard situation and risks of accident if the driver who changes his/her course failed to give signal as required. This paper describes the application of logistic regression model for the analysis of driver's signalling practices on multilane highways based on possible factors affecting driver's decision such as driver's gender, vehicle's type, vehicle's speed and traffic flow intensity. Data pertaining to the analysis of such factors were collected manually. More than 2000 drivers who have performed a lane changing manoeuvre while driving on two sections of multilane highways were observed. Finding from the study shows that relatively a large proportion of drivers failed to give any signals when changing lane. The result of the analysis indicates that although the proportion of the drivers who failed to provide signal prior to lane changing manoeuvre is high, the degree of compliances of the female drivers is better than the male drivers. A binary logistic model was developed to represent the probability of a driver to provide signal indication prior to lane changing manoeuvre. The model indicates that driver's gender, type of vehicle's driven, speed of vehicle and traffic volume influence the driver's decision to provide a signal indication prior to a lane changing manoeuvre on a multilane urban highway. In terms of types of vehicles driven, about 97% of motorcyclists failed to comply with the signal indication requirement. The proportion of non-compliance drivers under stable traffic flow conditions is much higher than when the flow is relatively heavy. This is consistent with the data which indicates a high degree of non-compliances when the average speed of the traffic stream is relatively high.

Older driver crash rates in relation to type and quantity of travel.

PubMed

Keall, Michael D; Frith, William J

2004-03-01

It is a well-established phenomenon that, notwithstanding their overall good crash record, older drivers have a higher than average rate of involvement in injury crashes when the rate is calculated by dividing crash numbers by distance driven. It has been hypothesised that at least some of this higher crash rate is an artefact of the different nature of driving undertaken by many older drivers. For example, driving in congested urban environments provides more opportunities for collisions than driving the same distance on a motorway. However, there have been few opportunities to investigate this theory, as relevant data are difficult to acquire. High-quality data from the New Zealand Travel Survey (1997/1998) were combined with crash data to enable a statistical model to estimate the risk of driver groups under various driving conditions characterised by the type of road used, time of day, day of week, and season of year. Despite elevated crash risks per distance driven compared with middle-aged drivers for most road types, older drivers were as safe as any other age group when driving on motorways. Accounting for the fragility of older drivers and their passengers in the risk estimates for other road types, older drivers appeared to have daytime risks comparable to 25-year-olds and night-time risks as low as any other age group. The driving patterns of older drivers (in terms of when and where they drive) were estimated to minimize their risks in comparison with the driving patterns of other age groups. These results are of interest to both policy makers and transportation planners working against the background of inevitable increases in the number of older drivers as the population ages.

Out-of-equilibrium body potential measurements in pseudo-MOSFET for sensing applications

NASA Astrophysics Data System (ADS)

Benea, Licinius; Bawedin, Maryline; Delacour, Cécile; Ionica, Irina

2018-05-01

The aim of this paper is to present the out-of-equilibrium body potential behaviour in the Ψ-MOSFET configuration. Consistent measurements in this experimental setup succeeded in providing a substantial understanding of its characteristics in the depletion region. The final objective of this work is to envision this new measurement technique for biochemical sensor applications. Among its advantages, the most important are its simplicity, the good sensitivity, the measurement of a potential instead of a current and the low bias needed for detection compared to the conventional drain current measurements.

Parameter extraction and transistor models

NASA Technical Reports Server (NTRS)

Rykken, Charles; Meiser, Verena; Turner, Greg; Wang, QI

1985-01-01

Using specified mathematical models of the MOSFET device, the optimal values of the model-dependent parameters were extracted from data provided by the Jet Propulsion Laboratory (JPL). Three MOSFET models, all one-dimensional were used. One of the models took into account diffusion (as well as convection) currents. The sensitivity of the models was assessed for variations of the parameters from their optimal values. Lines of future inquiry are suggested on the basis of the behavior of the devices, of the limitations of the proposed models, and of the complexity of the required numerical investigations.

Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

NASA Astrophysics Data System (ADS)

Boudier, D.; Cretu, B.; Simoen, E.; Veloso, A.; Collaert, N.

2018-05-01

In this work, Gate-All-Around Nanowire MOSFETs have been studied at very low temperatures. DC behaviors have been investigated in the linear operation and saturation regions, giving access to several analog parameters. Static characteristics at 4.2 K and low polarization exhibit step- like variations of the drain current, which can be linked to energy subband scattering. First results on the impact of quantum transport mechanism on the low frequency noise are shown. Finally the low frequency noise spectroscopy has led to the identification of silicon film traps.

A study of trends and techniques for space base electronics

NASA Technical Reports Server (NTRS)

Trotter, J. D.; Wade, T. E.; Gassaway, J. D.

1979-01-01

The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensional modeling program was written for the simulation of short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide-silicon interface. In solving current continuity equation, the program does not converge. However, solving the two dimensional Poisson equation for the potential distribution was achieved. The status of other 2D MOSFET simulation programs are summarized.

49 CFR 391.23 - Investigation and inquiries.

Code of Federal Regulations, 2014 CFR

2014-10-01

... paragraph from all previous employers of the applicant that employed the driver to operate a CMV within the... CMV. (2) Exception. For drivers required to have a commercial driver's license under part 383 of this... information before allowing the driver to operate a CMV: (A) The type of operation the driver self-certified...

49 CFR 391.23 - Investigation and inquiries.

Code of Federal Regulations, 2013 CFR

2013-10-01

... paragraph from all previous employers of the applicant that employed the driver to operate a CMV within the... CMV. (2) Exception. For drivers required to have a commercial driver's license under part 383 of this... information before allowing the driver to operate a CMV: (A) The type of operation the driver self-certified...

49 CFR 391.23 - Investigation and inquiries.

Code of Federal Regulations, 2012 CFR

2012-10-01

... paragraph from all previous employers of the applicant that employed the driver to operate a CMV within the... CMV. (2) Exception. For drivers required to have a commercial driver's license under part 383 of this... information before allowing the driver to operate a CMV: (A) The type of operation the driver self-certified...

Profound Tissue Specificity in Proliferation Control Underlies Cancer Drivers and Aneuploidy Patterns.

PubMed

Sack, Laura Magill; Davoli, Teresa; Li, Mamie Z; Li, Yuyang; Xu, Qikai; Naxerova, Kamila; Wooten, Eric C; Bernardi, Ronald J; Martin, Timothy D; Chen, Ting; Leng, Yumei; Liang, Anthony C; Scorsone, Kathleen A; Westbrook, Thomas F; Wong, Kwok-Kin; Elledge, Stephen J

2018-04-05

Genomics has provided a detailed structural description of the cancer genome. Identifying oncogenic drivers that work primarily through dosage changes is a current challenge. Unrestrained proliferation is a critical hallmark of cancer. We constructed modular, barcoded libraries of human open reading frames (ORFs) and performed screens for proliferation regulators in multiple cell types. Approximately 10% of genes regulate proliferation, with most performing in an unexpectedly highly tissue-specific manner. Proliferation drivers in a given cell type showed specific enrichment in somatic copy number changes (SCNAs) from cognate tumors and helped predict aneuploidy patterns in those tumors, implying that tissue-type-specific genetic network architectures underlie SCNA and driver selection in different cancers. In vivo screening confirmed these results. We report a substantial contribution to the catalog of SCNA-associated cancer drivers, identifying 147 amplified and 107 deleted genes as potential drivers, and derive insights about the genetic network architecture of aneuploidy in tumors. Copyright © 2018 Elsevier Inc. All rights reserved.

SU-G-IeP3-02: Characteristics of In-Vivo MOSFET Dosimeters for Diagnostic X-Ray Low-Dose Measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, S; Ali, S; Harper, K

Purpose: To correct in-vivo metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters dependence on X-ray energy, dose and dose rate, and temperature in order to measure doses or exposures on several anatomic points of interest undergoing some routine radiographs. Methods: A mobile MOSFET system (BEST Medical) was carefully calibrated with X-ray at kVp of 70, 80, 100, 120, and 138 kVp, phantom temperatures at 0, 21, and 43 oC, and exposure range from 0.01 to 10 R confirmed with Raysafe and RadCal dosimeters. The MOSFETS were placed on the midline bladder or uterus, left pelvic iliac artery, left abdominal above iliac crest, abdominalmore » midline anterior at inferior margin of stomach, and left pectoral of a large and a small body-size cadavers undergoing AP/PA chest and lumber spine radiographs using manual and automatic exposure control (AEC) with and without lead shielding. MOSTFETs and TLD chips were also placed on the stomach, sigmoid, pubic symphysis, left and right pelvic walls of another cadaver for AP pelvic manual or AEC radiography prior to and after a left hip metal implant. Results: Individual MOSFET detectors had various low-dose limits in ranged from 0.03 to 0.08 R, nonlinear response to X-ray energy, and significant temperature effect of 15%. By accumulating 10 manual exposures and 20 AEC exposures, we achieved dose measured accuracy of 6%. There were up to 8 fold increases for AEC exposure of spine and chest X-ray procedure from no shielding to with shielding. For pelvic radiography, exposure to public symphysis was the highest even higher than that of the skin. After hip implant, AEC pelvic radiograph increase exposure by 30 to 200% consistent with results of TLDs. Conclusion: Dependence of energy, temperature and dose limit were accurately corrected. We have found significant exposure for those clinical pr°ocedures and the study provided evidences for developing new clinical procedures.« less

Surface dosimetry for breast radiotherapy in the presence of immobilization cast material

NASA Astrophysics Data System (ADS)

Kelly, Andrew; Hardcastle, Nicholas; Metcalfe, Peter; Cutajar, Dean; Quinn, Alexandra; Foo, Kerwyn; Cardoso, Michael; Barlin, Sheree; Rosenfeld, Anatoly

2011-02-01

Curative breast radiotherapy typically leaves patients with varying degrees of cosmetic damage. One problem interfering with cosmetically acceptable breast radiotherapy is the external contour for large pendulous breasts which often results in high doses to skin folds. Thermoplastic casts are often employed to secure the breasts to maintain setup reproducibility and limit the presence of skin folds. This paper aims to determine changes in surface dose that can be attributed to the use of thermoplastic immobilization casts. Skin dose for a clinical hybrid conformal/IMRT breast plan was measured using radiochromic film and MOSFET detectors at a range of water equivalent depths representative of the different skin layers. The radiochromic film was used as an integrating dosimeter, while the MOSFETs were used for real-time dosimetry to isolate the contribution of skin dose from individual IMRT segments. Strips of film were placed at various locations on the breast and the MOSFETs were used to measure skin dose at 16 positions spaced along the film strips for comparison of data. The results showed an increase in skin dose in the presence of the immobilization cast of up to 45.7% and 62.3% of the skin dose without the immobilization cast present as measured with Gafchromic EBT film and MOSFETs, respectively. The increase in skin dose due to the immobilization cast varied with the angle of beam incidence and was greatest when the beam was normally incident on the phantom. The increase in surface dose with the immobilization cast was greater under entrance dose conditions compared to exit dose conditions.

N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.

PubMed

Fang, Yung-Chin; Chen, Kuen-Yi; Hsieh, Ching-Heng; Su, Chang-Chia; Wu, Yung-Hsien

2015-12-09

Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. The capability of the surface passivation was evidenced by the low interface trap density (D(it)) of 1.62 × 10(11) cm(-2) eV(-1), which is primarily due to the formation of Ge-O and Sn-O bonds at the surface by high density/reactivity oxygen radicals that effectively suppress dangling bonds and decrease gap states. The good D(it) not only makes tiny frequency dispersion in the characterization of GeSn MOS capacitors, but results in GeSn N-MOSFETs with outstanding peak electron mobility as high as 518 cm(2)/(V s) which outperforms other devices reported in the literature due to reduced undesirable carrier scattering. In addition, the GeSn N-MOSFETs also exhibit promising characteristics in terms of acceptable subthreshold swing of 156 mV/dec and relatively large I(ON)/I(OFF) ratio more than 4 orders. Moreover, the robust reliability in terms small V(t) variation against high field stress attests the feasibility of using the O2 plasma-treated passivation to advanced GeSn technology.

Fundamental Studies of the Silicon Carbide MOS Interface

NASA Astrophysics Data System (ADS)

Swandono, Steven

Climate change has placed a spotlight on renewable energy. Power electronics are essential to minimize energy loss when electricity is converted to a form used on the power grid. With silicon devices now approaching performance limits, SiC MOSFET can deliver power electronics to greater heights. However, the power capability of SiC MOSFETs is constrained by having low interface carrier mobility. It was coincidentally discovered that MOSFETs with oxide grown in alumina tubes have significantly higher mobility. We believe that the large surface potential fluctuations in SiC MOS interface results in percolation transport, and sodium ions from the alumina tubes reduces these percolative effects. Fabrication of SiC MOSFETs with different oxide thickness can vary the surface potential fluctuations and is used to verify the impact of percolation transport on SiC interface mobility. Characterization techniques on SiC devices are adopted from their silicon counterparts. Many characterization techniques are not tailored to the specification of SiC materials and hence, result in conflicting results during comparison of data among different research groups. The later chapters discussed the inaccuracies in the MOS AC conductance technique caused by the non-linear surface potential - gate voltage relationship and an energy-dependent interface state density. Using an exact model, we quantify errors in the extraction of interface state density, capture cross section, and position of the surface Fermi level when analyzed using the standard Nicollian-Goetzberger equations. We show that the exponential dependence of capture cross section on energy near the band edges is an artifact of the data analysis.

Committing driving violations: an observational study comparing city, town and village.

PubMed

Rosenbloom, Tova; Ben-Eliyahu, Adar; Nemrodov, Dan; Biegel, Ariela; Perlman, Amotz

2009-01-01

This article compares observed driving behavior in a city, a town, and a village. Unobtrusive observations were made at intersections in each residential type. Five violation types were observed: (a) not wearing a seat belt (seat belt violation); (b) not using a safety seat for a child (safety seat violation for children); (c) not using a speaker while speaking on the phone (on-phone violation); (d) failing to comply with a 'give way' sign ('give way' sign violation); and (e) stopping in an undesignated area (undesignated stop violation). It was expected that in accordance with the anonymity hypothesis that the bigger residential areas' rate of traffic violations would be higher. The effects of the residential type, drivers' gender, and age were assessed using the multiple regression model. The stepwise method of evaluation was employed. The model converged on step 3 (Adjusted R square=0.039). Residential type and gender contributed significantly to the model. Consistent with prior research, male drivers committed more violations than female drivers. Chi-square analyses were used to test the distribution of violations by the settlement types. Overall, more drivers committed violations in the two small residential areas than in the city, with 30% of city drivers, 43% of town drivers, and 51% of village drivers committing at least one violation (chi2 (2)=37.65, p<0.001). Moreover, in the town and the village, a combination of one or more violations was committed more often than in the city(chi2 (1)=34.645, p<0.001). Accordingly, more drivers committed violations in the two small settlements (48.4%) than in the city (30.6%). Possible explanations for the observed results were provided in the Discussion section. The conclusions of this paper are that drivers in small villages tend to disobey traffic laws. Therefore, efforts have to be made in companies to take this issue in consideration while running fleets in companies located in small places far from the center.

Chromosomal aberrations in peripheral lymphocytes of train engine drivers.

PubMed

Nordenson, I; Mild, K H; Järventaus, H; Hirvonen, A; Sandström, M; Wilén, J; Blix, N; Norppa, H

2001-07-01

Studies of Swedish railway employees have indicated that railroad engine drivers have an increased cancer morbidity and incidence of chronic lymphatic leukemia. The drivers are exposed to relatively high magnetic fields (MF), ranging from a few to over a hundred microT. Although the possible genotoxic potential of MF is unclear, some earlier studies have indicated that occupational exposure to MF may increase chromosome aberrations in blood lymphocytes. Since an increased level of chromosomal aberrations has been suggested to predict elevated cancer risk, we performed a cytogenetic analysis on cultured (48 h) peripheral lymphocytes of Swedish train engine drivers. A pilot study of 18 engine drivers indicated a significant difference in the frequency of cells with chromosomal aberrations (gaps included or excluded) in comparison with seven concurrent referents (train dispatchers) and a control group of 16 office workers. The engine drivers had about four times higher frequency of cells with chromosome-type aberrations (excluding gaps) than the office workers (P < 0.01) and the dispatchers (P < 0.05). Seventy-eight percent of the engine drivers showed at least one cell per 100 with chromosome-type aberrations compared with 29% among the dispatchers and 31% among the office workers. In a follow-up study, another 30 engine drivers showed an increase (P < 0.05) in the frequency of cells with chromosome-type aberrations (gaps excluded) as compared with 30 referent policemen. Sixty percent of the engine drivers had one or more cells (per 100 cells) with chromosome-type aberrations compared with 30% among the policemen. In conclusion, the results of the two studies support the hypothesis that exposure to MF at mean intensities of 2-15 microT can induce chromosomal damage. Copyright 2001 Wiley-Liss, Inc.

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

NASA Astrophysics Data System (ADS)

Gruber, G.; Cottom, J.; Meszaros, R.; Koch, M.; Pobegen, G.; Aichinger, T.; Peters, D.; Hadley, P.

2018-04-01

SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO2 interface degrade the ideal behavior of the devices. The relevant microscopic defects can be identified by electron paramagnetic resonance (EPR) or electrically detected magnetic resonance (EDMR). This helps to decide which changes to the fabrication process will likely lead to further increases of device performance and reliability. EDMR measurements have shown very similar dominant hyperfine (HF) spectra in differently processed MOSFETs although some discrepancies were observed in the measured g-factors. Here, the HF spectra measured of different SiC MOSFETs are compared, and it is argued that the same dominant defect is present in all devices. A comparison of the data with simulated spectra of the C dangling bond (PbC) center and the silicon vacancy (VSi) demonstrates that the PbC center is a more suitable candidate to explain the observed HF spectra.

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

NASA Astrophysics Data System (ADS)

Maitra, Kingsuk; Frank, Martin M.; Narayanan, Vijay; Misra, Veena; Cartier, Eduard A.

2007-12-01

We report low temperature (40-300 K) electron mobility measurements on aggressively scaled [equivalent oxide thickness (EOT)=1 nm] n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with HfO2 gate dielectrics and metal gate electrodes (TiN). A comparison is made with conventional nMOSFETs containing HfO2 with polycrystalline Si (poly-Si) gate electrodes. No substantial change in the temperature acceleration factor is observed when poly-Si is replaced with a metal gate, showing that soft optical phonons are not significantly screened by metal gates. A qualitative argument based on an analogy between remote phonon scattering and high-resolution electron energy-loss spectroscopy (HREELS) is provided to explain the underlying physics of the observed phenomenon. It is also shown that soft optical phonon scattering is strongly damped by thin SiO2 interface layers, such that room temperature electron mobility values at EOT=1 nm become competitive with values measured in nMOSFETs with SiON gate dielectrics used in current high performance processors.

Accurate analytical modeling of junctionless DG-MOSFET by green's function approach

NASA Astrophysics Data System (ADS)

Nandi, Ashutosh; Pandey, Nilesh

2017-11-01

An accurate analytical model of Junctionless double gate MOSFET (JL-DG-MOSFET) in the subthreshold regime of operation is developed in this work using green's function approach. The approach considers 2-D mixed boundary conditions and multi-zone techniques to provide an exact analytical solution to 2-D Poisson's equation. The Fourier coefficients are calculated correctly to derive the potential equations that are further used to model the channel current and subthreshold slope of the device. The threshold voltage roll-off is computed from parallel shifts of Ids-Vgs curves between the long channel and short-channel devices. It is observed that the green's function approach of solving 2-D Poisson's equation in both oxide and silicon region can accurately predict channel potential, subthreshold current (Isub), threshold voltage (Vt) roll-off and subthreshold slope (SS) of both long & short channel devices designed with different doping concentrations and higher as well as lower tsi/tox ratio. All the analytical model results are verified through comparisons with TCAD Sentaurus simulation results. It is observed that the model matches quite well with TCAD device simulations.

Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

NASA Astrophysics Data System (ADS)

Pavanello, Marcelo Antonio; de Souza, Michelly; Ribeiro, Thales Augusto; Martino, João Antonio; Flandre, Denis

2016-11-01

This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped transistors. Devices from two different technologies have been measured and show that the mobility increase rate with temperature for GC SOI transistors is similar to uniformly doped devices for temperatures down to 90 K. However, at liquid helium temperature the rate of mobility increase is larger in GC SOI than in standard devices because of the different mobility scattering mechanisms. The analog properties of GC SOI devices have been investigated down to 4.16 K and show that because of its better transconductance and output conductance, an intrinsic voltage gain improvement with temperature is also obtained for devices in the whole studied temperature range. GC devices are also capable of reducing the impact ionization due to the high electric field in the drain region, increasing the drain breakdown voltage of fully-depleted SOI MOSFETs at any studied temperature and the kink voltage at 4.16 K.

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

NASA Technical Reports Server (NTRS)

Biegel, Bryan A.; Rafferty, Conor S.; Yu, Zhiping; Dutton, Robert W.; Ancona, Mario G.; Saini, Subhash (Technical Monitor)

1998-01-01

We describe an electronic transport model and an implementation approach that respond to the challenges of device modeling for gigascale integration. We use the density-gradient (DG) transport model, which adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We present the current implementation of the DG model in PROPHET, a partial differential equation solver developed by Lucent Technologies. This implementation approach permits rapid development and enhancement of models, as well as run-time modifications and model switching. We show that even in typical bulk transport devices such as P-N diodes and BJTs, DG quantum effects can significantly modify the I-V characteristics. Quantum effects are shown to be even more significant in small, surface transport devices, such as sub-0.1 micron MOSFETs. In thin-oxide MOS capacitors, we find that quantum effects may reduce gate capacitance by 25% or more. The inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements. Significant quantum corrections also occur in the I-V characteristics of short-channel MOSFETs due to the gate capacitance correction.

A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2017-08-01

This paper suggests and investigates a double-gate (DG) MOSFET, which emulates tunnel field effect transistors (M-TFET). We have combined this novel concept into a double-gate MOSFET, which behaves as a tunneling field effect transistor by work function engineering. In the proposed structure, in addition to the main gate, we utilize another gate over the source region with zero applied voltage and a proper work function to convert the source region from N+ to P+. We check the impact obtained by varying the source gate work function and source doping on the device parameters. The simulation results of the M-TFET indicate that it is a suitable case for a switching performance. Also, we present a two-dimensional analytic potential model of the proposed structure by solving the Poisson's equation in x and y directions and by derivatives from the potential profile; thus, the electric field is achieved. To validate our present model, we use the SILVACO ATLAS device simulator. The analytical results have been compared with it.

Validation of a MOSFET dosemeter system for determining the absorbed and effective radiation doses in diagnostic radiology.

PubMed

Manninen, A-L; Kotiaho, A; Nikkinen, J; Nieminen, M T

2015-04-01

This study aimed to validate a MOSFET dosemeter system for determining absorbed and effective doses (EDs) in the dose and energy range used in diagnostic radiology. Energy dependence, dose linearity and repeatability of the dosemeter were examined. The absorbed doses (ADs) were compared at anterior-posterior projection and the EDs were determined at posterior-anterior, anterior-posterior and lateral projections of thoracic imaging using an anthropomorphic phantom. The radiation exposures were made using digital radiography systems. This study revealed that the MOSFET system with high sensitivity bias supply set-up is sufficiently accurate for AD and ED determination. The dosemeter is recommended to be calibrated for energies <60 and >80 kVp. The entrance skin dose level should be at least 5 mGy to minimise the deviation of the individual dosemeter dose. For ED determination, dosemeters should be implanted perpendicular to the surface of the phantom to prevent the angular dependence error. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Measurement of the volume growth rate of single budding yeast with the MOSFET-based microfluidic Coulter counter

PubMed Central

Sun, Jiashu; Stowers, Chris C.; Boczko, Erik M.

2012-01-01

We report on measurements of the volume growth rate of ten individual budding yeast cells using a recently developed MOSFET-based microfluidic Coulter counter. The MOSFET-based microfluidic Coulter counter is very sensitive, provides signals that are immune from the baseline drift, and can work with cell culture media of complex composition. These desirable features allow us to directly measure the volume growth rate of single cells of Saccharomyces cerevisiae LYH3865 strain budding yeast in YNB culture media over a whole cell cycle. Results indicate that all budding yeast follow a sigmoid volume growth profile with reduced growth rates at the initial stage before the bud emerges and the final stage after the daughter gets mature. Analysis of the data indicates that even though all piecewise linear, Gomperitz, and Hill’s function models can fit the global growth profile equally well, the data strongly support local exponential growth phenomenon. Accurate volume growth measurements are important for applications in systems biology where quantitative parameters are required for modeling and simulation. PMID:20717618

Measurement of the volume growth rate of single budding yeast with the MOSFET-based microfluidic Coulter counter.

PubMed

Sun, Jiashu; Stowers, Chris C; Boczko, Erik M; Li, Deyu

2010-11-07

We report on measurements of the volume growth rate of ten individual budding yeast cells using a recently developed MOSFET-based microfluidic Coulter counter. The MOSFET-based microfluidic Coulter counter is very sensitive, provides signals that are immune from the baseline drift, and can work with cell culture media of complex composition. These desirable features allow us to directly measure the volume growth rate of single cells of Saccharomyces cerevisiae LYH3865 strain budding yeast in YNB culture media over a whole cell cycle. Results indicate that all budding yeast follow a sigmoid volume growth profile with reduced growth rates at the initial stage before the bud emerges and the final stage after the daughter gets mature. Analysis of the data indicates that even though all piecewise linear, Gomperitz, and Hill's function models can fit the global growth profile equally well, the data strongly support local exponential growth phenomenon. Accurate volume growth measurements are important for applications in systems biology where quantitative parameters are required for modeling and simulation.

Evaluation of Schottky barrier height on 4H-SiC m-face \\{ 1\\bar{1}00\\} for Schottky barrier diode wall integrated trench MOSFET

NASA Astrophysics Data System (ADS)

Kobayashi, Yusuke; Ishimori, Hiroshi; Kinoshita, Akimasa; Kojima, Takahito; Takei, Manabu; Kimura, Hiroshi; Harada, Shinsuke

2017-04-01

We proposed an Schottky barrier diode wall integrated trench MOSFET (SWITCH-MOS) for the purposes of shrinking the cell pitch and suppressing the forward degradation of the body diode. A trench Schottky barrier diode (SBD) was integrated into a trench gate MOSFET with a wide shielding p+ region that protected the trench bottoms of both the SBD and the MOS gate from high electrical fields in the off state. The SBD was placed on the trench sidewall of the \\{ 1\\bar{1}00\\} plane (m-face). Static and transient simulations revealed that SWITCH-MOS sufficiently suppressed the bipolar current that induced forward degradation, and we determined that the optimum Schottky barrier height (SBH) was from 0.8 to 2.0 eV. The SBH depends on the crystal planes in 4H-SiC, but the SBH of the m-face was unclear. We fabricated a planar m-face SBD for the first time, and we obtained SBHs from 1.4 to 1.8 eV experimentally with titanium or nickel as a Schottky metal.

Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks

NASA Astrophysics Data System (ADS)

Bendayan, Michael; Sabo, Roi; Zolberg, Roee; Mandelbaum, Yaakov; Chelly, Avraham; Karsenty, Avi

2017-02-01

We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.

Circuit Methods for VLF Antenna Couplers. [for use in Loran or Omega receiver systems

NASA Technical Reports Server (NTRS)

Burhans, R. W.

1977-01-01

The limitations of different E-field antenna coupler or preamplifier circuits are presented. All circuits were evaluated using actual Loran or Omega signals. Electric field whip or wire antennas are the simplest types which can be used for reception of VLF signals in the 10 to 100 kHz range. JFET or MOSFET transistors provide impedance transformation and some voltage gain in simple circuits where the power for operating the preamplifier uses the same coaxial cable that feeds the signal back to the receiver. The circuit techniques provide useful alternative methods for Loran-Omega receiver system designers.

Investigation of a New Concept in Semiconductor Microwave Oscillators: The Contiguous Domain Oscillator

DTIC Science & Technology

1993-02-28

on a potential microwave source with many novel properties. It combines the transferred electron effect in n-type GaAs material together with 2 the...the channel direction. This barrier could be a physical barrier provided by a high band-gap material in a MOSFET structure or a potential barrier...rralivtic vcloocltv flc’ld curve of GmAs\\. chargc- oscillation ii po, ~ible once the dectnic fiC Xi di ’!I;ihU1]0n ClC(I OceCd OheMO) Osld fticl, ’Idh in 3

Graduated driver licensing and differential deterrence: The effect of license type on intentions to violate road rules.

PubMed

Poirier, Brigitte; Blais, Etienne; Faubert, Camille

2018-01-01

In keeping with the differential deterrence theory, this article assesses the moderating effect of license type on the relationship between social control and intention to violate road rules. More precisely, the article has two objectives: (1) to assess the effect of license type on intentions to infringe road rules; and (2) to pinpoint mechanisms of social control affecting intentions to violate road rules based on one's type of driver license (a restricted license or a full license). This effect is examined among a sample of 392 young drivers in the province of Quebec, Canada. Drivers taking part in the Graduated Driver Licensing (GDL) program have limited demerit points and there is zero tolerance for drinking-and-driving. Propensity score matching techniques were used to assess the effect of the license type on intentions to violate road rules and on various mechanisms of social control. Regression analyses were then conducted to estimate the moderating effect of license type. Average treatment effects from propensity score matching analyses indicate that respondents with a restricted license have lower levels of intention to infringe road rules. While moral commitment and, to a lesser extent, the perceived risk of arrest are both negatively associated with intentions to violate road rules, the license type moderates the relationship between delinquent peers and intentions to violate road rules. The effect of delinquent peers is reduced among respondents with a restricted driver license. Finally, a diminished capability to resist peer pressure could explain the increased crash risk in months following full licensing. Copyright © 2017 Elsevier Ltd. All rights reserved.

Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour

NASA Astrophysics Data System (ADS)

Donoval, Daniel; Vrbicky, Andrej; Marek, Juraj; Chvala, Ales; Beno, Peter

2008-06-01

High-voltage power MOSFETs have been widely used in switching mode power supply circuits as output drivers for industrial and automotive electronic control systems. However, as the device size is reduced, the energy handling capability is becoming a very important issue to be addressed together with the trade-off between the series on-resistance RON and breakdown voltage VBR. Unclamped inductive switching (UIS) condition represents the circuit switching operation for evaluating the "ruggedness", which characterizes the device capability to handle high avalanche currents during the applied stress. In this paper we present an experimental method which modifies the standard UIS test and allows extraction of the maximum device temperature after the applied standard stress pulse vanishes. Corresponding analysis and non-destructive prediction of the ruggedness of power DMOSFETs devices supported by advanced 2-D mixed mode electro-thermal device and circuit simulation under UIS conditions using calibrated physical models is provided also. The results of numerical simulation are in a very good correlation with experimental characteristics and contribute to their physical interpretation by identification of the mechanism of heat generation and heat source location and continuous temperature extraction.

78 FR 54723 - Information Collection Activities: Submission for the Office of Management and Budget (OMB...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-05

... (NHTSA) proposes to collect information from older adult licensed drivers about their driver license... . SUPPLEMENTARY INFORMATION: OMB Control Number: 2127-New. Title: Older Driver Compliance with Licensing Restrictions. Form No.: NHTSA Form 1186. Type of Review: Regular. Respondents: Drivers age 70 and older who...

Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, J. M.; Ladbury, R. L.; Batchelor, D. A.; Goldsman, N.; Kim, H. S.; Phan, A. M.

2010-01-01

A Technology Computer Aided Design (TCAD) simulation-based method is developed to evaluate whether derating of high-energy heavy-ion accelerator test data bounds the risk for single-event gate rupture (SEGR) from much higher energy on-orbit ions for a mission linear energy transfer (LET) requirement. It is shown that a typical derating factor of 0.75 applied to a single-event effect (SEE) response curve defined by high-energy accelerator SEGR test data provides reasonable on-orbit hardness assurance, although in a high-voltage power MOSFET, it did not bound the risk of failure.

Methods of high current magnetic field generator for transcranial magnetic stimulation application

NASA Astrophysics Data System (ADS)

Bouda, N. R.; Pritchard, J.; Weber, R. J.; Mina, M.

2015-05-01

This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications. This is achieved by utilizing two different switching devices, the MOSFET and insulated gate bipolar transistor (IGBT). Results indicate that currents as high as ±1200 A can be generated with inputs of +/-20 V. Special attention to tradeoffs between field generators utilizing IGBT circuits (HCMFG1) and MOSFET circuits (HCMFG2) was considered. The theory of operation, design, experimental results, and electronic setup are presented and analyzed.

Wide-temperature integrated operational amplifier

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad (Inventor); Levanas, Greg (Inventor); Chen, Yuan (Inventor); Cozy, Raymond S. (Inventor); Greenwell, Robert (Inventor); Terry, Stephen (Inventor); Blalock, Benjamin J. (Inventor)

2009-01-01

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

Vertical Isolation for Photodiodes in CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2008-01-01

In a proposed improvement in complementary metal oxide/semi conduct - or (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is expected to enable separate optimization of the designs of the photodiode and the MOSFETs so as to optimize their performances independently of each other. The purpose to be served by enabling this separate optimization is to eliminate or vastly reduce diffusion cross-talk, thereby increasing sensitivity, effective spatial resolution, and color fidelity while reducing noise.

Discussions On Worst-Case Test Condition For Single Event Burnout

NASA Astrophysics Data System (ADS)

Liu, Sandra; Zafrani, Max; Sherman, Phillip

2011-10-01

This paper discusses the failure characteristics of single- event burnout (SEB) on power MOSFETs based on analyzing the quasi-stationary avalanche simulation curves. The analyses show the worst-case test condition for SEB would be using the ion that has the highest mass that would result in the highest transient current due to charge deposition and displacement damage. The analyses also show it is possible to build power MOSFETs that will not exhibit SEB even when tested with the heaviest ion, which have been verified by heavy ion test data on SEB sensitive and SEB immune devices.

Methods of high current magnetic field generator for transcranial magnetic stimulation application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bouda, N. R., E-mail: nybouda@iastate.edu; Pritchard, J.; Weber, R. J.

This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications. This is achieved by utilizing two different switching devices, the MOSFET and insulated gate bipolar transistor (IGBT). Results indicate that currents as high as ±1200 A can be generated with inputs of +/−20 V. Special attention to tradeoffs between field generators utilizing IGBT circuits (HCMFG{sub 1}) and MOSFET circuits (HCMFG{sub 2}) was considered. The theory of operation, design, experimental results, and electronic setup are presented and analyzed.

Monte Carlo investigation of I-125 interseed attenuation for standard and thinner seeds in prostate brachytherapy with phantom validation using a MOSFET.

PubMed

Mason, J; Al-Qaisieh, B; Bownes, P; Henry, A; Thwaites, D

2013-03-01

In permanent seed implant prostate brachytherapy the actual dose delivered to the patient may be less than that calculated by TG-43U1 due to interseed attenuation (ISA) and differences between prostate tissue composition and water. In this study the magnitude of the ISA effect is assessed in a phantom and in clinical prostate postimplant cases. Results are compared for seed models 6711 and 9011 with 0.8 and 0.5 mm diameters, respectively. A polymethyl methacrylate (PMMA) phantom was designed to perform ISA measurements in a simple eight-seed arrangement and at the center of an implant of 36 seeds. Monte Carlo (MC) simulation and experimental measurements using a MOSFET dosimeter were used to measure dose rate and the ISA effect. MC simulations of 15 CT-based postimplant prostate treatment plans were performed to compare the clinical impact of ISA on dose to prostate, urethra, rectum, and the volume enclosed by the 100% isodose, for 6711 and 9011 seed models. In the phantom, ISA reduced the dose rate at the MOSFET position by 8.6%-18.3% (6711) and 7.8%-16.7% (9011) depending on the measurement configuration. MOSFET measured dose rates agreed with MC simulation predictions within the MOSFET measurement uncertainty, which ranged from 5.5% to 7.2% depending on the measurement configuration (k = 1, for the mean of four measurements). For 15 clinical implants, the mean ISA effect for 6711 was to reduce prostate D90 by 4.2 Gy (3%), prostate V100 by 0.5 cc (1.4%), urethra D10 by 11.3 Gy (4.4%), rectal D2cc by 5.5 Gy (4.6%), and the 100% isodose volume by 2.3 cc. For the 9011 seed the mean ISA effect reduced prostate D90 by 2.2 Gy (1.6%), prostate V100 by 0.3 cc (0.7%), urethra D10 by 8.0 Gy (3.2%), rectal D2cc by 3.1 Gy (2.7%), and the 100% isodose volume by 1.2 cc. Differences between the MC simulation and TG-43U1 consensus data for the 6711 seed model had a similar impact, reducing mean prostate D90 by 6 Gy (4.2%) and V100 by 0.6 cc (1.8%). ISA causes the delivered dose in prostate seed implant brachytherapy to be lower than the dose calculated by TG-43U1. MC simulation of phantom seed arrangements show that dose at a point can be reduced by up to 18% and this has been validated using a MOSFET dosimeter. Clinical simulations show that ISA reduces DVH parameter values, but the reduction is less for thinner seeds.

Using naturalistic driving study data to investigate the impact of driver distraction on driver's brake reaction time in freeway rear-end events in car-following situation.

PubMed

Gao, Jingru; Davis, Gary A

2017-12-01

The rear-end crash is one of the most common freeway crash types, and driver distraction is often cited as a leading cause of rear-end crashes. Previous research indicates that driver distraction could have negative effects on driving performance, but the specific association between driver distraction and crash risk is still not fully revealed. This study sought to understand the mechanism by which driver distraction, defined as secondary task distraction, could influence crash risk, as indicated by a driver's reaction time, in freeway car-following situations. A statistical analysis, exploring the causal model structure regarding drivers' distraction impacts on reaction times, was conducted. Distraction duration, distraction scenario, and secondary task type were chosen as distraction-related factors. Besides, exogenous factors including weather, visual obstruction, lighting condition, traffic density, and intersection presence and endogenous factors including driver age and gender were considered. There was an association between driver distraction and reaction time in the sample freeway rear-end events from SHRP 2 NDS database. Distraction duration, the distracted status when a leader braked, and secondary task type were related to reaction time, while all other factors showed no significant effect on reaction time. The analysis showed that driver distraction duration is the primary direct cause of the increase in reaction time, with other factors having indirect effects mediated by distraction duration. Longer distraction duration, the distracted status when a leader braked, and engaging in auditory-visual-manual secondary task tended to result in longer reaction times. Given drivers will be distracted occasionally, countermeasures which shorten distraction duration or avoid distraction presence while a leader vehicle brakes are worth considering. This study helps better understand the mechanism of freeway rear-end events in car-following situations, and provides a methodology that can be adopted to study the association between driver behavior and driving features. Copyright © 2017 National Safety Council and Elsevier Ltd. All rights reserved.

An observational study of driving distractions on urban roads in Spain.

PubMed

Prat, F; Planes, M; Gras, M E; Sullman, M J M

2015-01-01

The present research investigated the prevalence of driver engagement in secondary tasks and whether there were any differences by age and gender, as well as day of the week and time of the day. Two independent researchers observed 6578 drivers at nine randomly selected urban locations in Girona, Spain. Nearly 20% of the drivers observed were engaged in some type of secondary task, with the most common being: conversing with a passenger (11.1%), smoking (3.7%) and talking on a handheld mobile phone (1.3%). Surprisingly there were no differences by gender, but there were age-related differences with younger drivers being more frequently observed engaged in a number of different types of secondary tasks while driving (i.e. drinking, talking on a handheld mobile phone, and texting or keying numbers). Logistic regression showed that younger drivers, and to a lesser extent middle-age drivers, were significantly more likely to be observed engaged in a technological distraction than older drivers. Conversely, non-technological distractions were significantly predicted by day of the week, time of the day and location. A substantial number of the drivers observed in this study were putting themselves at an increased risk of becoming involved in a crash by engaging in non-driving related tasks at the same time as driving. Furthermore, the higher crash rate among young drivers may be partially accounted for by their more frequent engagement in some types of secondary tasks while driving. Copyright © 2014. Published by Elsevier Ltd.

Four-Quadrant Analog Multipliers Using G4-FETs

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Blalock, Benjamin; Christoloveanu, Sorin; Chen, Suheng; Akarvardar, Kerem

2006-01-01

Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output voltages are differential, The multiplier core consists of four G4- FETs (M1 through M4) biased by a constant current sink (Ibias), and The G4-FETs in two pairs are loaded by two identical resistors (RL), which convert a differential output current to a differential output voltage. The difference between the two circuits stems from their input and bias configurations. In each case, provided that the input voltages remain within their design ranges as determined by considerations of bias, saturation, and cutoff, then the output voltage is nominally given by Vout = kVin1Vin2, where k is a constant gain factor that depends on the design parameters and is different for the two circuits. In experimental versions of these circuits constructed using discrete G4- FETs and resistors, multiplication of voltages in all four quadrants (that is, in all four combinations of input polarities) was demonstrated, and deviations of the output voltages from linear dependence on the input voltages were found to amount to no more than a few percent. It is anticipated that in fully integrated versions of these circuits, the deviations from linearity will be made considerably smaller through better matching of devices.

[Occupational stress situation analysis of different types of train drivers].

PubMed

Zhou, Wenhui; Gu, Guizhen; Wu, Hui; Yu, Shanfa

2014-11-01

To analyze the status of occupational stress in different types of train drivers. By using cluster sampling method, a cross-sectional study was conducted in 1 339 train drivers (including 289 passenger train drivers, 637 freight trains drivers, 339 passenger shunting train drivers, and 74 high speed rail drivers) from a Railway Bureau depot. The survey included individual factors, occupational stress factors, stress response factors and stress mitigating factors. The occupational stress factors, stress response factors and mitigating factors were measured by the revised effort-reward imbalance (ERI) model questionnaires and occupational stress measurement scale. By using the method of covariance analysized the difference of occupational stress factors of all types train drivers, the method of Stepwise regression was used to analyze the effection (R(2)) of occupational stress factors and stress mitigating factors on stress response factors. Covariance analysis as covariates in age, education level, length of service and marital status showed that the scores of ERI (1.58 ± 0.05), extrinsic effort (19.88 ± 0.44), rewards (23.43 ± 0.43), intrinsic effort (17.86 ± 0.36), physical environment (5.70 ± 0.22), social support (30.51 ± 0.88) and daily tension (10.27 ± 0.38 ) of high speed rail drivers were higher than other drivers (F values were 6.06, 11.32, 7.05, 13.25, 5.20, 9.48 and 6.14 respectively, P < 0.01), but the scores of emotional balance (4.15 ± 0.31) and positive emotion (2.06 ± 0.20) were lower than other drives (P < 0.01);the scores of psychological needs (10.48 ± 0.18), emotional balance (4.88 ± 0.16) and positive emotion (2.63 ± 0.10) of passenger train drivers were higher than other drivers (F values were 4.33 and 5.50 respectively, P < 0.01). The descending rank of the effect value on occupational stress factors and mitigating factors to depressive symptoms of train drivers was high speed rail drivers (R(2) = 0.64), passenger train drivers (R(2) = 0.44), passenger shunting train drivers (R(2) = 0.39), freight trains drivers (R(2) = 0.38); job satisfaction of train drivers was high speed rail drivers (R(2) = 0.68), passenger train drivers (R(2) = 0.62), freight trains drivers (R(2) = 0.43), passenger shunting train drivers(R(2) = 0.38); to daily tension of train drivers was high speed rail drivers (R(2) = 0.54), passenger train drivers (R(2) = 0.37), passenger shunting train drivers (R(2) = 0.33), freight trains drivers (R(2) = 0.30); emotional balance of train drivers was high speed rail drivers (R(2) = 0.47), passenger train drivers (R(2) = 0.43), passenger shunting train drivers (R(2) = 0.33), freight trains drivers(R(2) = 0.31). ERI, psychological needs, work responsibilities, job roles, work conflict, and physical environment were important occupational stress factors of train drivers; social support was pivotal mitigating factors; different train drivers had different occupational stress status, high speed rail drivers were the highest, and freight trains drivers passenger train drivers or passenger shunting train drivers were the lowest.

Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology

NASA Astrophysics Data System (ADS)

Jiahui, Zhou; Hudong, Chang; Xufang, Zhang; Jingzhi, Yang; Guiming, Liu; Haiou, Li; Honggang, Liu

2016-02-01

A novel radio frequency (RF) switch device has been successfully fabricated using InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) technology. The device showed drain saturation currents of 250 mA/mm, a maximum transconductance of 370 mS/mm, a turn-on resistance of 0.72 mω·mm2 and a drain current on-off (Ion/Ioff) ratio of 1 × 106. The maximum handling power of on-state of 533 mW/mm and off-state of 3667 mW/mm is obtained. The proposed In0.4Ga0.6 As MOSFET RF switch showed an insertion loss of less than 1.8 dB and an isolation of better than 20 dB in the frequency range from 0.1 to 7.5 GHz. The lowest insertion loss and the highest isolation can reach 0.27 dB and more than 68 dB respectively. This study demonstrates that the InGaAs MOSFET technology has a great potential for RF switch application. Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).

Effect of boundary treatments on quantum transport current in the Green's function and Wigner distribution methods for a nano-scale DG-MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang Haiyan; Department of Mathematics and Statistics, University of North Carolina at Charlotte, Charlotte, NC 28223-0001; Cai Wei

2010-06-20

In this paper, we conduct a study of quantum transport models for a two-dimensional nano-size double gate (DG) MOSFET using two approaches: non-equilibrium Green's function (NEGF) and Wigner distribution. Both methods are implemented in the framework of the mode space methodology where the electron confinements below the gates are pre-calculated to produce subbands along the vertical direction of the device while the transport along the horizontal channel direction is described by either approach. Each approach handles the open quantum system along the transport direction in a different manner. The NEGF treats the open boundaries with boundary self-energy defined by amore » Dirichlet to Neumann mapping, which ensures non-reflection at the device boundaries for electron waves leaving the quantum device active region. On the other hand, the Wigner equation method imposes an inflow boundary treatment for the Wigner distribution, which in contrast ensures non-reflection at the boundaries for free electron waves entering the device active region. In both cases the space-charge effect is accounted for by a self-consistent coupling with a Poisson equation. Our goals are to study how the device boundaries are treated in both transport models affects the current calculations, and to investigate the performance of both approaches in modeling the DG-MOSFET. Numerical results show mostly consistent quantum transport characteristics of the DG-MOSFET using both methods, though with higher transport current for the Wigner equation method, and also provide the current-voltage (I-V) curve dependence on various physical parameters such as the gate voltage and the oxide thickness.« less

2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

Participatory video-assisted evaluation of truck drivers' work outside cab: deliveries in two types of transport.

PubMed

Reiman, Arto; Pekkala, Janne; Väyrynen, Seppo; Putkonen, Ari; Forsman, Mikael

2014-01-01

The aim of this study was to identify risks and ergonomics discomfort during work of local and short haul delivery truck drivers outside a cab. The study used a video- and computer-based method (VIDAR). VIDAR is a participatory method identifying demanding work situations and their potential risks. The drivers' work was videoed and analysed by subjects and ergonomists. Delivery truck drivers should not be perceived as one group with equal risks because there were significant differences between the 2 types of transportation and specific types of risks. VIDAR produces visual material for risk management processes. VIDAR as a participatory approach stimulates active discussion about work-related risks and discomfort, and about possibilities for improvement. VIDAR may be also applied to work which comprises different working environments.

Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface

NASA Astrophysics Data System (ADS)

Chokawa, Kenta; Narita, Tetsuo; Kikuta, Daigo; Kachi, Tetsu; Shiozaki, Koji; Shiraishi, Kenji

2018-03-01

We examine the energy band diagram at the n-type GaN (n-GaN)/SiO2 interface and show that electron transfer from n-GaN to SiO2 leads to the formation of negatively charged oxygen vacancies in the SiO2, resulting in the self-formation of an n-GaN/Ga2O3/SiO2 structure. On the other hand, it is difficult to automatically form Ga2O3 at a p-type GaN (p-GaN)/SiO2 interface. This electron-transfer-induced self-formation of Ga2O3 causes an interface dipole, which leads to band bending, resulting in an increase in the conduction band offset between GaN and SiO2. Accordingly, by using this self-forming phenomenon, GaN MOSFETs with lower leakage current can be realized.

Associations of distraction involvement and age with driver injury severities.

PubMed

Donmez, Birsen; Liu, Zishu

2015-02-01

This paper investigates the associations between the severity of injuries sustained by a driver who is involved in a two-vehicle crash, the existence and type of driver distraction as well as driver's age. Few studies investigated distraction as it relates to injury severity. Moreover, these studies did not consider driver age which is a significant factor related to driving behavior and the ability to respond in a crash situation. An ordered logit model was built to predict injury severity sustained by drivers using data from the U.S. National Automotive Sampling System's General Estimates System (2003 to 2008). Various factors (e.g., weather, gender, and speeding) were statistically controlled for, but the main focus was on the interaction of driver age and distraction type. The trends observed for young and mid-age drivers were similar. For these age groups, dialing or texting on the cell phone, passengers, and in-vehicle sources resulted in an increase in a likelihood of more severe injuries. Talking on the cell phone had a similar effect for younger drivers but was not significant for mid-age drivers. Inattention and distractions outside the vehicle decreased the odds of severe injuries. For older drivers, the highest odds of severe injuries were observed with dialing or texting on a cell phone, followed by in-vehicle sources and talking on the cell phone. All these sources were associated with an increased likelihood of injury severity. Similar to young and mid-age drivers, distractions outside the vehicle decreased the odds of severe injuries. Other distraction types did not have a significant effect for the older age group. The results support previous literature and extend our understanding of crash injury severity. The findings have implications for policy making and the design of distraction mitigation systems. Copyright © 2014 National Safety Council and Elsevier Ltd. All rights reserved.

National evaluation of graduated driver licensing programs.

DOT National Transportation Integrated Search

2006-06-01

Context. Implementation of Graduated Driver Licensing (GDL) programs is associated with lower fatal crash : rates of young drivers, but the contribution of specific components of GDL programs is not known. : Objective. To determine which types of GDL...

Prevalence of refraction errors and color blindness in heavy vehicle drivers.

PubMed

Erdoğan, Haydar; Ozdemir, Levent; Arslan, Seher; Cetin, Ilhan; Ozeç, Ayşe Vural; Cetinkaya, Selma; Sümer, Haldun

2011-01-01

To investigate the frequency of eye disorders in heavy vehicle drivers. A cross-sectional type study was conducted between November 2004 and September 2006 in 200 driver and 200 non-driver persons. A complete ophthalmologic examination was performed, including visual acuity, and dilated examination of the posterior segment. We used the auto refractometer for determining refractive errors. According to eye examination results, the prevalence of the refractive error was 21.5% and 31.3% in study and control groups respectively (P<0.05). The most common type of refraction error in the study group was myopic astigmatism (8.3%) while in the control group simple myopia (12.8%). Prevalence of dyschromatopsia in the rivers, control group and total group was 2.2%, 2.8% and 2.6% respectively. A considerably high number of drivers are in lack of optimal visual acuity. Refraction errors in drivers may impair the traffic security.

Prevalence of refraction errors and color blindness in heavy vehicle drivers

PubMed Central

Erdoğan, Haydar; Özdemir, Levent; Arslan, Seher; Çetin, Ilhan; Özeç, Ayşe Vural; Çetinkaya, Selma; Sümer, Haldun

2011-01-01

AIM To investigate the frequency of eye disorders in heavy vehicle drivers. METHODS A cross-sectional type study was conducted between November 2004 and September 2006 in 200 driver and 200 non-driver persons. A complete ophthalmologic examination was performed, including visual acuity, and dilated examination of the posterior segment. We used the auto refractometer for determining refractive errors. RESULTS According to eye examination results, the prevalence of the refractive error was 21.5% and 31.3% in study and control groups respectively (P<0.05). The most common type of refraction error in the study group was myopic astigmatism (8.3%) while in the control group simple myopia (12.8%). Prevalence of dyschromatopsia in the rivers, control group and total group was 2.2%, 2.8% and 2.6% respectively. CONCLUSION A considerably high number of drivers are in lack of optimal visual acuity. Refraction errors in drivers may impair the traffic security. PMID:22553671

Sleepiness/fatigue and distraction/inattention as factors for fatal versus nonfatal commercial motor vehicle driver injuries.

PubMed

Bunn, T L; Slavova, S; Struttmann, T W; Browning, S R

2005-09-01

A retrospective population-based case-control study was conducted to determine whether driver sleepiness/fatigue and inattention/distraction increase the likelihood that a commercial motor vehicle collision (CVC) will be fatal. Cases were identified as CVC drivers who died (fatal) and controls were drivers who survived (nonfatal) an injury collision using the Kentucky Collision Report Analysis for Safer Highways (CRASH) electronic database from 1998-2002. Cases and controls were matched on unit type and roadway type. Conditional logistic regression was performed. Driver sleepiness/fatigue, distraction/inattention, age of 51 years of age and older, and nonuse of safety belts increase the odds that a CVC will be fatal. Primary safety belt law enactment and enforcement for all states, commercial vehicle driver education addressing fatigue and distraction and other approaches including decreased hours-of-service, rest breaks and policy changes, etc. may decrease the probability that a CVC will be fatal.

Motor vehicle driver death and high state maximum speed limits: 1991-1993.

PubMed

Yamane, Grover K; Bradshaw, Benjamin S

2008-09-01

To measure the association between motor vehicle crash (MVC) driver death and high state maximum speed limits. This study used a case-control design and assessed driver deaths from three major types of MVCs: non-collision; collision with motor vehicles in transit; and collision with stationary objects. The study period was 1991-1993. For each type of crash, case subject populations of fatally injured drivers were obtained from the U.S. Department of Transportation Fatality Analysis Reporting System. Four control subject populations, each associated with a different cause of death, were obtained from a U.S. national death certificate database (the causes of death were unintentional poisoning, non-Hodgkin lymphoma, drowning, and diabetes mellitus). Subjects were considered exposed if the state in which they crashed (for cases) or died (for controls) had a maximum speed limit greater than 55 mph. Each of the three case subject populations was compared against each of the four control subject populations. Odds ratios (ORs) were adjusted for age and gender. For non-collision driver death, ORs ranged from 3.06 to 6.56, depending on the year and control group; all the ORs were significant. For collision with motor vehicles in transit driver death, ORs ranged from 1.12 to 2.22; all the ORs were significant. For collision with stationary objects driver death, ORs ranged from 0.87 to 1.83. There was a moderately strong and significant association between non-collision driver death and high state maximum speed limits. For collision with motor vehicles in transit driver death, the association was somewhat milder but still consistent. For collision with stationary objects driver death, the presence of an association was unclear. During 1991-1993, the effects of high state maximum speed limits may have been different for different types of MVCs.

Effects of congestion on drivers' speed choice: Assessing the mediating role of state aggressiveness based on taxi floating car data.

PubMed

Huang, Yizhe; Sun, Daniel Jian; Zhang, Li-Hui

2018-08-01

Inappropriate cruising speed, such as speeding, is one of the major contributors to the road safety, which increases both the quantitative number and severity of traffic accidents. Previous studies have indicated that traffic congestion is one of the primary causes of drivers' frustration and aggression, which may lead to inappropriate speed choice. In this study, the large taxi floating car data (FCD) was used to empirically evaluate how traffic congestion-related negative moods, defined as state aggressiveness, affected drivers' speed choice. The indirect effect of traffic delay on the cruising speed adjustment through the state aggressiveness was assessed through the mediation analysis. Furthermore, the moderated mediation analysis was performed to explore the effect of driver type, value of time, and working duration on the mediation role of state aggressiveness. The results proved that the state aggressiveness was the mediator of the relationship between travel delays and driving speed adjustment, and the mediation role was different across various driver types. As compared to the aggressive drivers, the normal drivers and the steady drivers tended to behave more aggressively after experiencing non-recurrent congestion during the early stage of the trips. When the value of time was high, steady drivers were more likely to adjust their speed choice although the effect was not statistically significant for other driver types. The validation results indicated that the speed model incorporating state aggressiveness could better predict the travel time than the traditional speed model that only considering the specific expected speed distribution. The prediction results for the manifest indicators of state aggressiveness, such as the maximum speed and the speed deviation, also demonstrated a reasonable reflection of the field data. Copyright © 2018 Elsevier Ltd. All rights reserved.

A spring-mass-damper system dynamics-based driver-vehicle integrated model for representing heterogeneous traffic

NASA Astrophysics Data System (ADS)

Munigety, Caleb Ronald

2018-04-01

The traditional traffic microscopic simulation models consider driver and vehicle as a single unit to represent the movements of drivers in a traffic stream. Due to this very fact, the traditional car-following models have the driver behavior related parameters, but ignore the vehicle related aspects. This approach is appropriate for homogeneous traffic conditions where car is the major vehicle type. However, in heterogeneous traffic conditions where multiple vehicle types are present, it becomes important to incorporate the vehicle related parameters exclusively to account for the varying dynamic and static characteristics. Thus, this paper presents a driver-vehicle integrated model hinged on the principles involved in physics-based spring-mass-damper mechanical system. While the spring constant represents the driver’s aggressiveness, the damping constant and the mass component take care of the stability and size/weight related aspects, respectively. The proposed model when tested, behaved pragmatically in representing the vehicle-type dependent longitudinal movements of vehicles.

Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mooney, P. M.; Jiang, Zenan; Basile, A. F.

To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. Thesemore » are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.« less

Characterization of a new MOSFET detector configuration for in vivo skin dosimetry.

PubMed

Scalchi, Paolo; Francescon, Paolo; Rajaguru, Priyadarshini

2005-06-01

The dose released to the patient skin during a radiotherapy treatment is important when the skin is an organ at risk, or on the contrary, is included in the target volume. Since most treatment planning programs do not predict dose within several millimeters of the body surface, it is important to have a method to verify the skin dose for the patient who is undergoing radiotherapy. A special type of metal oxide semiconductors field-effect transistors (MOSFET) was developed to perform in vivo skin dosimetry for radiotherapy treatments. Water-equivalent depth (WED), both manufacturing and sensor reproducibility, dependence on both field size and angulation of the sensor were investigated using 6 MV photon beams. Patient skin dosimetries were performed during 6 MV total body irradiations (TBI). The resulting WEDs ranged from 0.04 and 0.15 mm (0.09 mm on average). The reproducibility of the sensor response, for doses of 50 cGy, was within +/-2% (maximum deviation) and improves with increasing sensitivity or dose level. As to the manufacturing reproducibility, it was found to be +/-0.055 mm. No WED dependence on the field size was verified, but possible variations of this quantity with the field size could be hidden by the assessment uncertainty. The angular dependence, for both phantom-surface and in-air setups, when referred to the mean response, is within +/-27% until 80 degree rotations. The results of the performed patient skin dosimetries showed that, normally, our TBI setup was suitable to give skin the prescribed dose, but, for some cases, interventions were necessary: as a consequence the TBI setup was corrected. The water-equivalent depth is, on average, less than the thinnest thermoluminescent dosimeters (TLD). In addition, when compared with TLDs, the skin MOSFETs have significant advantages, like immediate both readout and reuse, as well as the permanent storage of dose. These sensors are also waterproof. The in vivo dosimetries performed prove the importance of verifying the dose to the skin of the patient undergoing radiotherapy.

Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sulaeman, M. Y.; Widita, R.

2014-09-30

Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulsemore » than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of −1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.« less

School Bus Accidents and Driver Age.

ERIC Educational Resources Information Center

McMichael, Judith

The study examines the rates and types of school bus accidents according to the age of the school bus driver. Accident rates in North Carolina for the school year 1971-72 were analyzed using three sources of data: accident reports, driver and mileage data, and questionnaires administered to a sample of school bus drivers. Data were obtained on…

1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors.

PubMed

Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît

2009-01-01

We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

NASA Astrophysics Data System (ADS)

Xu, Cheng; Liu, Bo; Chen, Yi-Feng; Liang, Shuang; Song, Zhi-Tang; Feng, Song-Lin; Wan, Xu-Dong; Yang, Zuo-Ya; Xie, Joseph; Chen, Bomy

2008-05-01

A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0. 18 μm complementary metal-oxide semiconductor process technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50 ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.

Models of second-order effects in metal-oxide-semiconductor field-effect transistors for computer applications

NASA Technical Reports Server (NTRS)

Benumof, Reuben; Zoutendyk, John; Coss, James

1988-01-01

Second-order effects in metal-oxide-semiconductor field-effect transistors (MOSFETs) are important for devices with dimensions of 2 microns or less. The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also take these effects into account. In addition, the drain current is sensitive to channel length modulation due to pinch-off or velocity saturation and is diminished by electron mobility degradation due to normal and lateral electric fields in the channel. A model of a MOSFET including these considerations and emphasizing charge conservation is discussed.

High fluence swift heavy ion structure modification of the SiO2/Si interface and gate insulator in 65 nm MOSFETs

NASA Astrophysics Data System (ADS)

Ma, Yao; Gao, Bo; Gong, Min; Willis, Maureen; Yang, Zhimei; Guan, Mingyue; Li, Yun

2017-04-01

In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO2/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO2 and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

Implementation of an intraoperative electron radiotherapy in vivo dosimetry program.

PubMed

López-Tarjuelo, Juan; Morillo-Macías, Virginia; Bouché-Babiloni, Ana; Boldó-Roda, Enrique; Lozoya-Albacar, Rafael; Ferrer-Albiach, Carlos

2016-03-15

Intraoperative electron radiotherapy (IOERT) is a highly selective radiotherapy technique which aims to treat restricted anatomic volumes during oncological surgery and is now the subject of intense re-evaluation. In vivo dosimetry has been recommended for IOERT and has been identified as a risk-reduction intervention in the context of an IOERT risk analysis. Despite reports of fruitful experiences, information about in vivo dosimetry in intraoperative radiotherapy is somewhat scarce. Therefore, the aim of this paper is to report our experience in developing a program of in vivo dosimetry for IOERT, from both multidisciplinary and practical approaches, in a consistent patient series. We also report several current weaknesses. Reinforced TN-502RDM-H mobile metal oxide semiconductor field effect transistors (MOSFETs) and Gafchromic MD-55-2 films were used as a redundant in vivo treatment verification system with an Elekta Precise fixed linear accelerator for calibrations and treatments. In vivo dosimetry was performed in 45 patients in cases involving primary tumors or relapses. The most frequent primary tumors were breast (37 %) and colorectal (29 %), and local recurrences among relapses was 83 %. We made 50 attempts to measure with MOSFETs and 48 attempts to measure with films in the treatment zones. The surgical team placed both detectors with supervision from the radiation oncologist and following their instructions. The program was considered an overall success by the different professionals involved. The absorbed doses measured with MOSFETs and films were 93.8 ± 6.7 % and 97.9 ± 9.0 % (mean ± SD) respectively using a scale in which 90 % is the prescribed dose and 100 % is the maximum absorbed dose delivered by the beam. However, in 10 % of cases we experienced dosimetric problems due to detector misalignment, a situation which might be avoided with additional checks. The useful MOSFET lifetime length and the film sterilization procedure should also be controlled. It is feasible to establish an in vivo dosimetry program for a wide set of locations treated with IOERT using a multidisciplinary approach according to the skills of the professionals present and the detectors used; oncological surgeons' commitment is key to success in this context. Films are more unstable and show higher uncertainty than MOSFETs but are cheaper and are useful and convenient if real-time treatment monitoring is not necessary.

Photo-electronic current transport in back-gated graphene transistor

NASA Astrophysics Data System (ADS)

Srivastava, Ashok; Chen, Xinlu; Pradhan, Aswini K.

2017-04-01

In this work, we have studied photo-electronic current transport in a back-gated graphene field-effect transistor. Under the light illumination, band bending at the metal/graphene interface develops a built-in potential which generates photonic current at varying back-gate biases. A typical MOSFET type back-gated transistor structure uses a monolayer graphene as the channel layer formed over the silicon dioxide/silicon substrate. It is shown that the photo-electronic current consists of current contributions from photovoltaic, photo-thermoelectric and photo-bolometric effects. A maximum external responsivity close to 0.0009A/W is achieved at 30μW laser power source and 633nm wavelength.

Predicting and Reducing Driving Mishaps Among Drivers With Type 1 Diabetes

PubMed Central

Gonder-Frederick, Linda A.; Singh, Harsimran; Ingersoll, Karen S.; Banton, Tom; Grabman, Jesse H.; Schmidt, Karen; Clarke, William

2017-01-01

OBJECTIVE Two aims of this study were to develop and validate A) a metric to identify drivers with type 1 diabetes at high risk of future driving mishaps and B) an online intervention to reduce mishaps among high-risk drivers. RESEARCH DESIGN AND METHODS To achieve aim A, in study 1, 371 drivers with type 1 diabetes from three U.S. regions completed a series of established questionnaires about diabetes and driving. They recorded their driving mishaps over the next 12 months. Questionnaire items that uniquely discriminated drivers who did and did not have subsequent driving mishaps were assembled into the Risk Assessment of Diabetic Drivers (RADD) scale. In study 2, 1,737 drivers with type 1 diabetes from all 50 states completed the RADD online. Among these, 118 low-risk (LR) and 372 high-risk (HR) drivers qualified for and consented to participate in a 2-month treatment period followed by 12 monthly recordings of driving mishaps. To address aim B, HR participants were randomized to receive either routine care (RC) or the online intervention “DiabetesDriving.com” (DD.com). Half of the DD.com participants received a motivational interview (MI) at the beginning and end of the treatment period to boost participation and efficacy. All of the LR participants were assigned to RC. In both studies, the primary outcome variable was driving mishaps. RESULTS Related to aim A, in study 1, the RADD demonstrated 61% sensitivity and 75% specificity. Participants in the upper third of the RADD distribution (HR), compared with those in the lower third (LR), reported 3.03 vs. 0.87 mishaps/driver/year, respectively (P < 0.001). In study 2, HR and LR participants receiving RC reported 4.3 and 1.6 mishaps/driver/year, respectively (P < 0.001). Related to aim B, in study 2, MIs did not enhance participation or efficacy, so the DD.com and DD.com + MI groups were combined. DD.com participants reported fewer hypoglycemia-related driving mishaps than HR participants receiving RC (P = 0.01), but more than LR participants receiving RC, reducing the difference between the HR and LR participants receiving RC by 63%. HR drivers differed from LR drivers at baseline across a variety of hypoglycemia and driving parameters. CONCLUSIONS The RADD identified higher-risk drivers, and identification seemed relatively stable across time, samples, and procedures. This 11-item questionnaire could inform patients at higher risk, and their clinicians, that they should take preventive steps to reduce driving mishaps, which was accomplished in aim B using DD.com. PMID:28404657

Young drivers' perception of adult and child pedestrians in potential street-crossing situations.

PubMed

Ābele, Līva; Haustein, Sonja; Møller, Mette

2018-04-03

Despite overall improvements in road traffic safety, pedestrian accidents continue to be a serious public health problem. Due to lack of experience, limited cognitive and motoric skills, and smaller size, children have a higher injury risk as pedestrians than adults. To what extent drivers adjust their driving behaviour to children's higher vulnerability is largely unknown. To determine whether young male drivers' behaviour and scanning pattern differs when approaching a child and an adult pedestrian in a potential street-crossing situation, sixty-five young (18-24) male drivers' speed, lateral position and eye movements were recorded in a driving simulator. Results showed that fewer drivers responded by slowing down and that drivers had a higher driving speed when approaching a child pedestrian, although the time of the first fixation on both types of pedestrians was the same. However, drivers drove farther away from a child than an adult pedestrian. Additionally, fewer drivers who did not slow down fixated on the speedometer while approaching the child pedestrian. The results show that young drivers behave differently when approaching a child and an adult pedestrian, though not in a way that appropriately accounts for the limitations of a child pedestrian. A better understanding of how drivers respond to different types of pedestrians and why could contribute to the development of pedestrian detection and emergency braking systems. Copyright © 2018 Elsevier Ltd. All rights reserved.