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Sample records for multi-nanolayer structures grown

  1. Spin polarized state filter based on semiconductor–dielectric–iron–semiconductor multi-nanolayer device

    SciTech Connect

    Makarov, Vladimir I.; Khmelinskii, Igor

    2015-04-15

    Highlights: • Development of a new spintronics device. • Development of quantum spin polarized filters. • Development of theory of quantum spin polarized filter. - Abstract: Presently we report spin-polarized state transport in semiconductor–dielectric–iron–semiconductor (SDIS) four-nanolayer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-nanolayer devices. The theoretical model developed earlier is extended and used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment is also performed. The model predicts an exchange spectrum comprising a series of peaks, with the spectral structure determined by several factors, discussed in the paper.

  2. Next Generation Structural Composite Using Surface Grown Carbon Nanotubes

    DTIC Science & Technology

    2012-10-01

    various levels of energy ........................................................... 26 Next Generation Structural Composites Using Surface Grown Carbon...were maintained at a vacuum  level  of  2.3×10‐2 Torr  for 24 hours  to ensure  full curing of  the epoxy  in  the absence of air bubbles. A 1.0 mm...using the student t‐test assuming 95%  levels  of significance.    Failure behaviors of on‐ and off‐axis tests are shown schematically in Figure 5

  3. Structural properties of opals grown with vertical controlled drying.

    PubMed

    Hartsuiker, Alex; Vos, Willem L

    2008-05-06

    We have grown thin opals of self-assembled silica colloids by the well-known vertically controlled drying method. The volume fraction at the start of the growth and the temperature were systematically varied. We have quantitatively characterized the lateral domain sizes by scanning electron microscopy. The sample thickness as a function of position was obtained from Fabry-Pérot fringes measured in optical reflectivity. We observe that the sample thickness strongly increases from top to bottom, independent of temperature, in agreement with a model that we propose. The inhomogeneity in thickness contrasts with earlier reports. The lateral domain shapes of the single-crystal domains are found to vary from irregular near the top to rectangular near the bottom. A surprising observation is that, grosso modo, the lateral domain extents increase linearly with thickness (i.e., thin crystals are small, and thick crystals are large). This behavior agrees qualitatively with results on completely different colloids such as disordered slurries. The consequence of our results for optical applications, including photonic crystals, is that unwanted scattering due to grain boundaries is reduced for large domains that are thick. Conversely, thin crystals will scatter relatively strongly from grain boundaries.

  4. Fine structure of Cryptococcus neoformans grown in vivo as observed by freeze-etching.

    PubMed

    Takeo, K; Uesaka, I; Uehira, K; Nishiura, M

    1973-03-01

    Cryptococcus neoformans grown in the parasitic state was observed by the freeze-etching technique and was compared with that grown on culture media. Unlike other yeasts, this organism grown in vivo is very often devoid of the "ordinary" invaginations. The membrane of the cell grown in vivo was almost free from concavity and convexity except for many round depressions which represent the surface view of paramural bodies. Some of the paramural bodies were found to be multivesicular systems. Most were spherical invaginations containing a single vesicle or its ghost remaining after secretion of the vesicles. In clear contrast to the cell grown in vitro, the in vivo cell contained a great number of vesicles in the cytoplasm. These seemed to show high-secretion activity in C. neoformans grown in the parasitic state. On transfer from in vitro to in vivo, this organism enlarged the cell wall, capsule, and cell body. The appearance of a large vacuole, accumulation of storage organelles, and the existence of rodlike structures, seemingly lipid deposits, were also noted in the cytoplasm of the cell grown in vivo. the meaning of these results as well as the mode of capsular production are discussed.

  5. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

    NASA Astrophysics Data System (ADS)

    Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

    2017-02-01

    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

  6. Crystalline and electronic energy structure of OMVPE-grown AlGaInP/GaAs

    NASA Astrophysics Data System (ADS)

    Kondow, M.; Kakibayashi, H.; Minagawa, S.; Inoue, Y.; Nishino, T.; Hamakawa, Y.

    1988-12-01

    The crystalline and electronic energy structure of AlGaInP/GaAs grown by organometallic vapor phase epitaxy (OMVPE) is investigated using transmission electron microscopy (TEM) and electroreflectance (ER), as well as photoluminescence (PL) and Raman scattering measurements. In TEM observation, sharp superstructure spots at the h+ {1}/{2}, k- {1}/{2}, l± {1}/{2} position, corresponding to CuPt type structure, are present in the (110) diffraction pattern. Based on this observation, the relationship between the bond and the ordered structure configuration on 9001) growth surface is discussed. It is also found by photoluminescence and Raman scattering measurements that the GaInP grown on (111)B is in a disordered state. Photoluminescence measurement for AlGaInP grown under various conditions shows that an ordered structure exists not only in GaInP but throughout the entire compositional range of the AlGaInP/GaAs. The electroreflectance spectrum shows anomalous structures specific to OMVPE-grown GaInP. The structures around 2.2 and 2.4 eV suggest that there exist additional interband transition edges caused possibly by zone-folding from the L point to the Γ point.

  7. AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy.

    PubMed

    Tamura, Yosuke; Hane, Kazuhiro

    2015-12-01

    AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60-120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall structures grown along the c-plane consisted of AlN (0002) crystal with full-width at half maximum of the rocking curve about 5000 arcsec.

  8. Structure of carbon nanotubes grown by microwave-plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Okai, M.; Muneyoshi, T.; Yaguchi, T.; Sasaki, S.

    2000-11-01

    Carbon nanotubes grown on a Ni substrate and an Fe-Ni-Cr alloy substrate by plasma-enhanced chemical vapor deposition were investigated by transmission electron microscope (TEM) and energy dispersive x-ray (EDX) analysis. TEM showed that the nanotubes on both substrates have a piled-cone structure with metal particles on top which determine the diameter of the nanotubes. Their diameter ranges from 60 to 80 nm. Moreover, EDX showed that the metal particles are composed of Ni when the nanotubes are grown on Ni substrate and of Fe and Ni in the case of the Fe-Ni-Cr alloy substrate.

  9. Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Virt, I. S.; Rudyi, I. O.; Lopatynskyi, I. Ye.; Dubov, Yu.; Tur, Y.; Lusakowska, E.; Luka, G.

    2017-01-01

    Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al2O3) and on Si covered with a Si3N4 buffer layer. The Si3N4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si3N4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.

  10. Space-grown protein crystals are more useful for structure determination.

    PubMed

    Ng, Joseph D

    2002-10-01

    The usefulness of X-ray data derived from space-grown protein crystals for calculating a more accurate structure is reviewed here for three model proteins. These include the plant sweetening protein, thaumatin, from Thaumatococcus daniellii; the aspartyl-tRNA synthetase from Thermus thermophilus; and pea lectin from Pisum sativum. In all three cases, X-ray diffraction data collected from protein crystals obtained under reduced gravity lead to better defined initial electron density maps, facilitating model building and improved crystallographic statistics. With thaumatin, the phasing power of the anomalous scattering atom, sulfur, is used to determine protein crystal quality in terms of its usefulness for ab initio structure determination. Thaumatin crystals grown under microgravity provided improved phasing statistics compared to those of Earth-grown crystals. Consequently, generating a de novo protein model of higher quality was facilitated using X-ray diffraction data from space-grown crystals. This lends evidence to the possibility that a microgravity environment can favor protein crystal growth and, subsequently, be more useful for structure determination.

  11. Investigations about series resistance of MOVPE grown GaN laser structures

    NASA Astrophysics Data System (ADS)

    Scholz, F.; Moutchnik, G.; Dumitru, V.; Härle, R.; Schweizer, H.

    2003-02-01

    In order to reduce the total series resistance of an AlGaInN laser structure, we have exchanged the GaN:Mg contact layer normally covering a laser structure by GaInN:Mg and have investigated the influence of several growth conditions on its electrical properties. We found a significant decrease of the series resistance for a GaInN layer grown at 800°C with hydrogen as carrier gas which results, at lower current densities, in a voltage drop of at least 2 V compared to GaN contact layers. Our studies show that not only the changed growth conditions, but indeed the In content plays a major role for these improvements, although it is only about 2%. Laser structures grown on SiC wafers show minimum total differential resistivities below 1.5×10 -4 Ω cm 2.

  12. Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jiang, Xian-Zhe; Yang, Xue-Lin; Ji, Cheng; Xing, Hai-Ying; Yang, Zhi-Jian; Wang, Cun-Da; Yu, Tong-Jun; Zhang, Guo-Yi

    2014-06-01

    GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on VGa related defects are observed from photoluminescence measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different (n-type GaN and p-type GaN) templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.

  13. Local structure and magnetic properties of ultrathin Mn films grown on Si(001)

    NASA Astrophysics Data System (ADS)

    Kahwaji, Samer; Monchesky, Theodore; Crozier, Daryl; Gordon, Robert

    2012-02-01

    We report on the structural and magnetic properties of ultrathin Mn layers deposited onto Si(001) by molecular beam epitaxy (MBE) at low temperature. X-ray absorption fine structure (XAFS) studies reveal that the structure of the silicide layer that forms depends on the growth temperature of the capping layer. A capping layer grown at 200 ^oC on 0.35 monolayer (ML) Mn results in a metastable MnSi phase with a B2-like (CsCl) structure, whereas a cap grown at room temperature on 0.5 ML followed by annealing at 200 ^oC produces a lower coordinated MnSi phase with a B20-like structure. Increasing the Mn thickness from 0.5 to 4 monolayers does not trigger a structural transformation but drives the structure closer to MnSi-B20. Using SQUID magnetometry, we show that the sample with B2-like structure has the largest Mn magnetic moment of 0.33μB/Mn at T=2 K, and a Curie temperature TC above 250 K. MnSi-B20 layers showed lower moments and much lower TC's, in-line with those reported for MnSi-B20 thin films.

  14. Detailed Structural and Quantitative Analysis Reveals the Spatial Organization of the Cell Walls of in Vivo Grown Mycobacterium leprae and in Vitro Grown Mycobacterium tuberculosis*

    PubMed Central

    Bhamidi, Suresh; Scherman, Michael S.; Jones, Victoria; Crick, Dean C.; Belisle, John T.; Brennan, Patrick J.; McNeil, Michael R.

    2011-01-01

    The cell wall of mycobacteria consists of an outer membrane, analogous to that of Gram-negative bacteria, attached to the peptidoglycan (PG) via a connecting polysaccharide arabinogalactan (AG). Although the primary structure of these components is fairly well deciphered, issues such as the coverage of the PG layer by covalently attached mycolates in the outer membrane and the spatial details of the mycolic acid attachment to the arabinan have remained unknown. It is also not understood how these components work together to lead to the classical acid-fast staining of mycobacteria. Because the majority of Mycobacterium tuberculosis bacteria in established experimental animal infections are acid-fast negative, clearly cell wall changes are occurring. To address both the spatial properties of mycobacterial cell walls and to begin to study the differences between bacteria grown in animals and cultures, the cell walls of Mycobacterium leprae grown in armadillos was characterized and compared with that of M. tuberculosis grown in culture. Most fundamentally, it was determined that the cell wall of M. leprae contained significantly more mycolic acids attached to PG than that of in vitro grown M. tuberculosis (mycolate:PG ratios of 21:10 versus 16:10, respectively). In keeping with this difference, more arabinogalactan (AG) molecules, linking the mycolic acids to PG, were found. Differences in the structures of the AG were also found; the AG of M. leprae is smaller than that of M. tuberculosis, although the same basic structural motifs are retained. PMID:21555513

  15. Detailed structural and quantitative analysis reveals the spatial organization of the cell walls of in vivo grown Mycobacterium leprae and in vitro grown Mycobacterium tuberculosis.

    PubMed

    Bhamidi, Suresh; Scherman, Michael S; Jones, Victoria; Crick, Dean C; Belisle, John T; Brennan, Patrick J; McNeil, Michael R

    2011-07-01

    The cell wall of mycobacteria consists of an outer membrane, analogous to that of gram-negative bacteria, attached to the peptidoglycan (PG) via a connecting polysaccharide arabinogalactan (AG). Although the primary structure of these components is fairly well deciphered, issues such as the coverage of the PG layer by covalently attached mycolates in the outer membrane and the spatial details of the mycolic acid attachment to the arabinan have remained unknown. It is also not understood how these components work together to lead to the classical acid-fast staining of mycobacteria. Because the majority of Mycobacterium tuberculosis bacteria in established experimental animal infections are acid-fast negative, clearly cell wall changes are occurring. To address both the spatial properties of mycobacterial cell walls and to begin to study the differences between bacteria grown in animals and cultures, the cell walls of Mycobacterium leprae grown in armadillos was characterized and compared with that of M. tuberculosis grown in culture. Most fundamentally, it was determined that the cell wall of M. leprae contained significantly more mycolic acids attached to PG than that of in vitro grown M. tuberculosis (mycolate:PG ratios of 21:10 versus 16:10, respectively). In keeping with this difference, more arabinogalactan (AG) molecules, linking the mycolic acids to PG, were found. Differences in the structures of the AG were also found; the AG of M. leprae is smaller than that of M. tuberculosis, although the same basic structural motifs are retained.

  16. Columnar structured FePt films epitaxially grown on large lattice mismatched intermediate layer.

    PubMed

    Dong, K F; Deng, J Y; Peng, Y G; Ju, G; Chow, G M; Chen, J S

    2016-09-30

    The microstructure and magnetic properties of the FePt films grown on large mismatched ZrN (15.7%) intermediate layer were investigated. With using ZrN intermediate layer, FePt 10 nm films exhibited (001) texture except for some weaker FePt (110) texture. Good epitaxial relationships of FePt (001) <100>//ZrN (001) <100>//TiN (001) <100> among FePt and ZrN/TiN were revealed from the transmission electron microscopy (TEM) results. As compared with TiN intermediate layer, although FePt-SiO2-C films grown on ZrN/TiN intermediate layer showed isotropic magnetic properties, the large interfacial energy and lattice mismatch between FePt and ZrN would lead to form columnar structural FePt films with smaller grain size and improved isolation. By doping ZrN into the TiN layer, solid solution of ZrTiN was formed and the lattice constant is increased comparing with TiN and decreased comparing with ZrN. Moreover, FePt-SiO2-C films grown on TiN 2 nm-20 vol.% ZrN/TiN 3 nm intermediate layer showed an improved perpendicular magnetic anisotropy. Simultaneously, columnar structure with smaller grain size retained.

  17. Columnar structured FePt films epitaxially grown on large lattice mismatched intermediate layer

    PubMed Central

    Dong, K. F.; Deng, J. Y.; Peng, Y. G.; Ju, G.; Chow, G. M.; Chen, J. S.

    2016-01-01

    The microstructure and magnetic properties of the FePt films grown on large mismatched ZrN (15.7%) intermediate layer were investigated. With using ZrN intermediate layer, FePt 10 nm films exhibited (001) texture except for some weaker FePt (110) texture. Good epitaxial relationships of FePt (001) <100>//ZrN (001) <100>//TiN (001) <100> among FePt and ZrN/TiN were revealed from the transmission electron microscopy (TEM) results. As compared with TiN intermediate layer, although FePt-SiO2-C films grown on ZrN/TiN intermediate layer showed isotropic magnetic properties, the large interfacial energy and lattice mismatch between FePt and ZrN would lead to form columnar structural FePt films with smaller grain size and improved isolation. By doping ZrN into the TiN layer, solid solution of ZrTiN was formed and the lattice constant is increased comparing with TiN and decreased comparing with ZrN. Moreover, FePt-SiO2-C films grown on TiN 2 nm-20 vol.% ZrN/TiN 3 nm intermediate layer showed an improved perpendicular magnetic anisotropy. Simultaneously, columnar structure with smaller grain size retained. PMID:27686046

  18. Columnar structured FePt films epitaxially grown on large lattice mismatched intermediate layer

    NASA Astrophysics Data System (ADS)

    Dong, K. F.; Deng, J. Y.; Peng, Y. G.; Ju, G.; Chow, G. M.; Chen, J. S.

    2016-09-01

    The microstructure and magnetic properties of the FePt films grown on large mismatched ZrN (15.7%) intermediate layer were investigated. With using ZrN intermediate layer, FePt 10 nm films exhibited (001) texture except for some weaker FePt (110) texture. Good epitaxial relationships of FePt (001) <100>//ZrN (001) <100>//TiN (001) <100> among FePt and ZrN/TiN were revealed from the transmission electron microscopy (TEM) results. As compared with TiN intermediate layer, although FePt-SiO2-C films grown on ZrN/TiN intermediate layer showed isotropic magnetic properties, the large interfacial energy and lattice mismatch between FePt and ZrN would lead to form columnar structural FePt films with smaller grain size and improved isolation. By doping ZrN into the TiN layer, solid solution of ZrTiN was formed and the lattice constant is increased comparing with TiN and decreased comparing with ZrN. Moreover, FePt-SiO2-C films grown on TiN 2 nm-20 vol.% ZrN/TiN 3 nm intermediate layer showed an improved perpendicular magnetic anisotropy. Simultaneously, columnar structure with smaller grain size retained.

  19. Ga/1-x/Al/x/As LED structures grown on GaP substrates.

    NASA Technical Reports Server (NTRS)

    Woodall, J. M.; Potemski, R. M.; Blum, S. E.; Lynch, R.

    1972-01-01

    Ga(1-x)Al(x)As light-emitting diode structures have been grown on GaP substrates by the liquid-phase-epitaxial method. In spite of the large differences in lattice constants and thermal-expansion coefficients, room-temperature efficiencies up to 5.5% in air have been observed for a peak emission of 8500 A. Using undoped GaP substrates, which are transparent to the infrared and red portions of the spectrum, thin structures of Ga(1-x)Al(x)As with large external efficiencies can now be made.

  20. The magnetic and chemical structural property of the epitaxially-grown multilayered thin film

    NASA Astrophysics Data System (ADS)

    Lee, Hwachol

    L10 FePt- and Fe-related alloys such as FePtRh, FeRh and FeRhPd have been studied for the high magnetocrystalline anisotropy and magnetic phase transition property for the future application. In this work, the thin film structural and magnetic property is investigated for the selected FePtRh and FeRhPd alloys. The compositionally-modulated L10 FePtRh multilayered structure is grown epitaxially on a-plane Al2O3 with Cr and Pt buffer layer at 600degC growth temperature by DC sputtering technique and examined for the structural, interfacial and magnetic property. For the epitaxially grown L10 [Fe50Pt45Rh5 (FM) (10nm) / Fe50Pt25Rh25 (AFM) (20nm)]x8 superlattice, the magnetically and chemically sharp interface formation between layers was observed in X-ray diffraction, transmission electron microscopy and polarized neutron reflectivity measurements with the negligible exchange bias at room and a slight coupling effect at lower temperature regime. For FeRhPd, the magnetic phase transition of epitaxially-grown 111-oriented Fe46Rh48Pd6 thin film is studied. The applied Rhodium buffer layer on a-plane Al2O3 (11 20) at 600degC shows the extraordinarily high quality of epitaxial film in (111) orientation, where two broad and coherent peak in rocking curve, and Laue oscillations are observed. The epitaxially-grown Pd-doped FeRh on Pt (111) grown at 600degC, 700degC exhibits the co-existing stable L10 (111) and B2 (110) structures and magnetic phase transition around 300degC. On the other hand, the partially-ordered FeRhPd structure grown at 400degC, 500degC shows background high ferromagnetic state over 5K˜350K temperature. For the reduced thickness of Fe46Rh48Pd 6, the ferromagnetic state becomes dominant with a reduced portion of the film undergoing a magnetic phase transition. For some epitaxial FeRhPd film, the spin-glass-like disordered state is also observed in field dependent SQUID measurement. For the tri-layered FeRhPd with thin Pt spacer, the background

  1. Structural characterization of InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2015-06-24

    In the present work we have grown InSb thin films on brass substrates, using the electrodeposition technique. The electrochemical baths used in the growth were made up of aqueous solutions of InCl{sub 3} and SbCl{sub 3} mixed together in various proportions. The films grown were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive Analysis of X-rays (EDAX). Compositional studies show that stoichiometric InSb films can be prepared from a bath containing 0.05M InCl{sub 3} and 0.04M SbCl{sub 3}. XRD studies reveal that the films grown are polycrystalline having the zinc blende structure with (111) orientation. Crystallite size, dislocation density and strain were calculated using the XRD results. Optical transmission spectra were recorded using an FTIR spectrophotometer. The value of direct band gap was found to be around 0.20 eV for the thin films having the best stoichiometry.

  2. Structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kanzyuba, Vasily; Dong, Sining; Liu, Xinyu; Li, Xiang; Rouvimov, Sergei; Okuno, Hanako; Mariette, Henri; Zhang, Xueqiang; Ptasinska, Sylwia; Tracy, Brian D.; Smith, David J.; Dobrowolska, Margaret; Furdyna, Jacek K.

    2017-02-01

    We describe the structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy on GaAs (111) substrates, as revealed by transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. When the Mn concentration is increased, the lattice of the ternary (Sn,Mn)Se films evolves quasi-coherently from a SnSe2 two-dimensional (2D) crystal structure into a more complex quasi-2D lattice rearrangement, ultimately transforming into the magnetically concentrated antiferromagnetic MnSe 3D rock-salt structure as Mn approaches 50 at. % of this material. These structural transformations are expected to underlie the evolution of magnetic properties of this ternary system reported earlier in the literature.

  3. Growth and atomic structure of tellurium thin films grown on Bi2Te3

    NASA Astrophysics Data System (ADS)

    Okuyama, Yuma; Sugiyama, Yuya; Ideta, Shin-ichiro; Tanaka, Kiyohisa; Hirahara, Toru

    2017-03-01

    We have grown tellurium (Te) thin films on Bi2Te3 and investigated the atomic structure. From low-energy electron diffraction (LEED) measurements, we found that the Te films are [10 1 bar0]-oriented with six domains. A detailed analysis of the reflection high-energy electron diffraction (RHEED) pattern revealed that the films are strained with the in-plane lattice constant compressed by ∼1.5% compared to the bulk value due to the epitaxy between Te and Bi2Te3. These films will be interesting systems to investigate the predicted topological phases that occur in strained Te.

  4. Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy

    SciTech Connect

    Nataraj, L.; Sustersic, N.; Coppinger, M.; Gerlein, L. F.; Kolodzey, J.; Cloutier, S. G.

    2010-03-22

    We report on the structural and optoelectronic properties of self-assembled germanium-rich islands grown on silicon using molecular beam epitaxy. Raman, photocurrent, photoluminescence, and transient optical spectroscopy measurements suggest significant built-in strains and a well-defined interface with little intermixing between the islands and the silicon. The shape of these islands depends on the growth conditions and includes pyramid, dome, barn-shaped, and superdome islands. Most importantly, we demonstrate that these germanium-rich islands provide efficient light emission at telecommunication wavelengths on a complementary metal-oxide semiconductor-compatible platform.

  5. Rhizobacterial Community Structures Associated with Native Plants Grown in Chilean Extreme Environments.

    PubMed

    Jorquera, Milko A; Maruyama, Fumito; Ogram, Andrew V; Navarrete, Oscar U; Lagos, Lorena M; Inostroza, Nitza G; Acuña, Jacquelinne J; Rilling, Joaquín I; de La Luz Mora, María

    2016-10-01

    Chile is topographically and climatically diverse, with a wide array of diverse undisturbed ecosystems that include native plants that are highly adapted to local conditions. However, our understanding of the diversity, activity, and role of rhizobacteria associated with natural vegetation in undisturbed Chilean extreme ecosystems is very poor. In the present study, the combination of denaturing gradient gel electrophoresis and 454-pyrosequencing approaches was used to describe the rhizobacterial community structures of native plants grown in three representative Chilean extreme environments: Atacama Desert (ATA), Andes Mountains (AND), and Antarctic (ANT). Both molecular approaches revealed the presence of Proteobacteria, Bacteroidetes, and Actinobacteria as the dominant phyla in the rhizospheres of native plants. Lower numbers of operational taxonomic units (OTUs) were observed in rhizosphere soils from ATA compared with AND and ANT. Both approaches also showed differences in rhizobacterial community structures between extreme environments and between plant species. The differences among plant species grown in the same environment were attributed to the higher relative abundance of classes Gammaproteobacteria and Alphaproteobacteria. However, further studies are needed to determine which environmental factors regulate the structures of rhizobacterial communities, and how (or if) specific bacterial groups may contribute to the growth and survival of native plants in each Chilean extreme environments.

  6. Co3O4(100) films grown on Ag(100): Structure and chemical properties

    NASA Astrophysics Data System (ADS)

    Arman, Mohammad A.; Merte, Lindsay R.; Lundgren, Edvin; Knudsen, Jan

    2017-03-01

    Spinel type Co3O4(100) is successfully grown on Ag(100) at ultrahigh vacuum conditions and its structure, electronic and chemical properties are compared with those of Co3O4(111) grown on Ir(100). We find that the Co3O4(100) is unreconstructed. In contrast to the defect free Co3O4(111) surface the Co3O4(100) surface contains a high concentration of defects that we assign to subsurface cation vacancies analogous to those observed for Fe3O4(100). Our photoemission and absorption spectroscopy experiments reveal a very similar electronic structure of the Co3O4(111) and Co3O4(100) surfaces. The similar electronic structure of the two surfaces is reflected in the CO adsorption properties at low temperatures, as we observe adsorption of molecular CO as well as the formation of carbonate (CO3) species on both surfaces upon CO exposure at 85 K.

  7. Woody plant diversity and structure of shade-grown-coffee plantations in northern Chiapas, Mexico.

    PubMed

    Soto-Pinto, L; Romero-Alvarado, Y; Caballero-Nieto, J; Segura Warnholtz, G

    2001-01-01

    Shade-grown coffee is an agricultural system that contains some forest-like characteristics. However, structure and diversity are poorly known in shade coffee systems. In 61 coffee-growers' plots of Chiapas, Mexico, structural variables of shade vegetation and coffee yields were measured, recording species and their use. Coffee stands had five vegetation strata. Seventy seven woody species mostly used as wood were found (mean density 371.4 trees per hectare). Ninety percent were native species (40% of the local flora), the remaining were introduced species, mainly fruit trees/shrubs. Diametric distribution resembles that of a secondary forest. Principal Coordinates Analysis grouped plots in four classes by the presence of Inga, however the majority of plots are diverse. There was no difference in equitability among groups or coffee yields. Coffee yield was 835 g clean coffee per shrub, or ca. 1,668 kg ha-1. There is a significant role of shade-grown coffee as diversity refuge for woody plants and presumably associated fauna as well as an opportunity for shade-coffee growers to participate in the new biodiversity-friendly-coffee market.

  8. Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures.

    PubMed

    Schulze, A; Loo, R; Ryan, P; Wormington, M; Favia, P; Witters, L; Collaert, N; Bender, H; Vandervorst, W; Caymax, M

    2017-04-07

    The performance of heterogeneous 3D transistor structures critically depends on the composition and strain state of the buffer, channel and source/drain regions. In this paper we used an in-line high resolution x-ray diffraction (HRXRD) tool to study in detail the composition and strain in selectively grown SiGe/Ge fin structures with widths down to 20 nm. For this purpose we arranged fins of identical dimensions into larger arrays which were then analyzed using an x-ray beam several tens of micrometers in size. Asymmetric reciprocal space maps measured both parallel and perpendicular to the fins allowed us to extract the lattice parameters in all three spatial directions. Our results demonstrate an anisotropic in-plane strain state of the selectively grown SiGe buffer in case of narrower fins with significantly reduced relaxation in the direction along the fin. This observation was verified using nano-beam electron diffraction, and is explained based on the reduced probability for dislocation half-loops to evolve in trenches narrower than a few times the critical radius. Moreover, we introduce and discuss in detail a methodology for the determination of the composition in case of an anisotropic in-plane strain state which differs from the procedure commonly used for blanket layers. Our findings verify the importance of in-line HRXRD measurements for process development and monitoring as well as the fundamental study of relaxation and defect formation in confined volumes.

  9. Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures

    NASA Astrophysics Data System (ADS)

    Schulze, A.; Loo, R.; Ryan, P.; Wormington, M.; Favia, P.; Witters, L.; Collaert, N.; Bender, H.; Vandervorst, W.; Caymax, M.

    2017-04-01

    The performance of heterogeneous 3D transistor structures critically depends on the composition and strain state of the buffer, channel and source/drain regions. In this paper we used an in-line high resolution x-ray diffraction (HRXRD) tool to study in detail the composition and strain in selectively grown SiGe/Ge fin structures with widths down to 20 nm. For this purpose we arranged fins of identical dimensions into larger arrays which were then analyzed using an x-ray beam several tens of micrometers in size. Asymmetric reciprocal space maps measured both parallel and perpendicular to the fins allowed us to extract the lattice parameters in all three spatial directions. Our results demonstrate an anisotropic in-plane strain state of the selectively grown SiGe buffer in case of narrower fins with significantly reduced relaxation in the direction along the fin. This observation was verified using nano-beam electron diffraction, and is explained based on the reduced probability for dislocation half-loops to evolve in trenches narrower than a few times the critical radius. Moreover, we introduce and discuss in detail a methodology for the determination of the composition in case of an anisotropic in-plane strain state which differs from the procedure commonly used for blanket layers. Our findings verify the importance of in-line HRXRD measurements for process development and monitoring as well as the fundamental study of relaxation and defect formation in confined volumes.

  10. Structural and optical characterization and scintillator application of hydrothermal-grown ZnO microrods

    NASA Astrophysics Data System (ADS)

    Empizo, Melvin John F.; Santos-Putungan, Alexandra B.; Yamanoi, Kohei; Salazar, Hernanie T.; Anguluan, Eloise P.; Mori, Kazuyuki; Arita, Ren; Minami, Yuki; Luong, Mui Viet; Shimizu, Toshihiko; Estacio, Elmer S.; Somintac, Armando S.; Salvador, Arnel A.; Sarmago, Roland V.; Fukuda, Tsuguo; Sarukura, Nobuhiko

    2017-03-01

    ZnO microrods are fabricated by a simple hydrothermal growth route using zinc acetate dihydrate [Zn(CH3COO)2·2H2O] and hexamethylenetetramine [(CH2)6N4] aqueous solutions. The as-prepared microrods exhibit uniform dimensions, well-faceted surfaces, and hexagonal crystal structure. The microrods also have an intense ultraviolet (UV) emission at 392 nm with an average lifetime of 80 ps. No peaks are observed at the visible wavelengths that can be attributed to defect-related emissions. With excellent structural and optical properties and with loose adhesion to their substrates, the ZnO microrods can be isolated, harvested, and manipulated and can be integrated as building blocks of a microstructured scintillator screen. The proposed scintillator screen possibly offers efficient and precise detection with high resolution. Hydrothermal-grown ZnO microrods then hold a promise towards radiation detector innovation and integrated optoelectronic microsystems.

  11. Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy.

    PubMed

    Gu, Yi; Wang, Kai; Zhou, Haifei; Li, Yaoyao; Cao, Chunfang; Zhang, Liyao; Zhang, Yonggang; Gong, Qian; Wang, Shumin

    2014-01-13

    InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi < 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.

  12. Electronic and magnetic structure of ultra-thin Ni films grown on W(110)

    NASA Astrophysics Data System (ADS)

    Calloni, A.; Bussetti, G.; Berti, G.; Yivlialin, R.; Camera, A.; Finazzi, M.; Duò, L.; Ciccacci, F.

    2016-12-01

    We studied the electronic structure of thin Ni films grown on a W(110) single crystal, as a function of the Ni thickness, by means of angle-resolved photoemission and inverse photoemission spectroscopy, also with spin resolution. The results are discussed in the light of the different stages characterizing the transition from the pseudomorphic bcc to the fully relaxed fcc phase. A clear spin polarization is detected as soon as a bulk-like electronic structure is observed. In these conditions, we characterized the exchange splitting of the occupied bands at the Γbar and Mbar points of the surface Brillouin zone, providing further experimental support to previous interpretations of photoemission spectra from bulk Ni.

  13. Surface Structure of Kio (3) Grown By Heterogeneous Reaction of Ozone With Ki (001)

    SciTech Connect

    Brown, M.A.; Liu, Z.; Ashby, P.D.; Mehta, A.; Grimm, R.L.; Hemminger, J.C.

    2009-05-12

    The crystal structure of KIO{sub 3} grown by heterogeneous surface oxidation of KI (001) with ozone is reported. Under ambient reaction conditions (RH {approx}35%, room temperature) a thick layer of KIO{sub 3} grows at the gas-solid interface. Two doublets are present in the I(4d) X-ray photoelectron spectroscopy structure measurements, characteristic of unreacted KI (I{sup -}) from the substrate and the oxidized KIO{sub 3} (I{sup 5+}) reaction product. X-ray diffraction measurements confirm the presence at the interface of randomly oriented polycrystalline-triclinic KIO{sub 3} with an average particle diameter of 15 nm. KIO{sub 3} particle diameters determined from the X-ray diffraction peak widths are consistent with the results of atomic force microscopy. There is no X-ray powder diffraction evidence to suggest that the underlying KI substrate is altered in any manner during this heterogeneous interfacial reaction.

  14. Structural properties and gas sensing behavior of sol-gel grown nanostructured zinc oxide

    NASA Astrophysics Data System (ADS)

    Rajyaguru, Bhargav; Gadani, Keval; Rathod, K. N.; Solanki, Sapana; Kansara, S. B.; Pandya, D. D.; Shah, N. A.; Solanki, P. S.

    2016-05-01

    In this communication, we report the results of the studies on structural properties and gas sensing behavior of nanostructured ZnO grown using acetone precursor based modified sol-gel technique. Final product of ZnO was sintered at different temperatures to vary the crystallite size while their structural properties have been studied using X-ray diffraction (XRD) measurement performed at room temperature. XRD results suggest the single phasic nature of all the samples and crystallite size increases from 11.53 to 20.96nm with increase in sintering temperature. Gas sensing behavior has been studied for acetone gas which indicates that lower sintered samples are more capable to sense the acetone gas and related mechanism has been discussed in the light of crystallite size, crystal boundary density, defect mechanism and possible chemical reaction between gas traces and various oxygen species.

  15. Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils

    SciTech Connect

    Buchowicz, G.; Stone, P.R.; Robinson, J.T.; Cress, C.D.; Beeman, J.W.; Dubon, O.D.

    2010-11-04

    Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging from 1012 cm-2 to 1015 cm-2 indicate that the structure of graphene evolves from a highly-ordered layer, to a patchwork of disordered domains, to an essentially amorphous film. These structural changes result in a dramatic decrease in the Hall mobility by orders of magnitude while, remarkably, the Hall concentration remains almost unchanged, suggesting that the Fermi level is pinned at a hole concentration near 1x1013 cm-2. A model for scattering by resonant scatterers is in good agreement with mobility measurements up to an ion fluence of 1x1014 cm-2.

  16. Interface structure of epitaxial graphene grown on 4H-SiC(0001)

    SciTech Connect

    Hass, J.; Millán-Otoya, J.E.; First, P.N.; Conrad, E.H.

    2009-06-12

    We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer ({approx}1.7 {angstrom} compared to 0.63 {angstrom}). The distance from this interface layer to the first graphene sheet is much smaller than the graphite interlayer spacing but larger than the same distance measured for graphene grown on the (000{bar 1}) surface, as predicted previously by ab initio calculations.

  17. Solidification structures grown under induced flow and continuous casting of steel

    NASA Technical Reports Server (NTRS)

    Tsavaras, A. A.

    1984-01-01

    The use of induced flow as a means to control solidification structures in strand cast steel is investigated. The quality problems in strand cast steel stemming from columnar growth can be partially controlled, by Electro Magnetic Stirring (EMS). Induced flow changes the normal morphology of dendrites. Solids grown under intense stirring conditions show both negative and positive segregation which is considered unacceptable by some steel producers. The inclusion size and population is strongly affected by induced flow (EMS). Laboratory and industrial data show substantial reduction in inclusion size and content, but the overall effect of flow on inclusions is affected by the particular type of flow patterns utilized in each case. Productivity and quality are raised substantially in steel strand casting by utilizing EMS.

  18. Structural Defects in Laterally Overgrown GaN Layers Grown onNon-polar Substrates

    SciTech Connect

    Liliental-Weber, Z.; Ni, X.; Morkoc, H.

    2007-02-14

    Transmission electron microscopy was used to study defects in lateral epitaxial layers of GaN which were overgrown on a template of a-plane (11{und 2}0) GaN grown on (1{und 1}02) r-plane Al2O3. A high density of basal stacking faults is formed in these layers because the c-planes of wurtzite structure are arranged along the growth direction. Density of these faults is decreasing at least by two orders of magnitude lower in the wings compared to the seed areas. Prismatic stacking faults and threading dislocations are also observed, but their densities drastically decrease in the wings. The wings grow with opposite polarities and the Ga-wing width is at least 6 times larger than N-wing and coalescence is rather difficult. Some tilt and twist was detected using Large Angle Convergent Beam Electron Diffraction.

  19. Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

    SciTech Connect

    Tokarczyk, M.; Kowalski, G. Stępniewski, R.; Możdżonek, M.; Strupiński, W.; Ciepielewski, P.; Borysiuk, J.

    2013-12-09

    Structural investigations of hydrogenated epitaxial graphene grown on SiC(0001) are presented. It is shown that hydrogen plays a dual role. In addition to contributing to the well-known removal of the buffer layer, it goes between the graphene planes, resulting in an increase of the interlayer spacing to 3.6 Å–3.8 Å. It is explained by the intercalation of molecular hydrogen between carbon planes, which is followed by H{sub 2} dissociation, resulting in negatively charged hydrogen atoms trapped between the graphene layers, with some addition of covalent bonding to carbon atoms. Negatively charged hydrogen may be responsible for p-doping observed in hydrogenated multilayer graphene.

  20. Micromechanical and structural study of ambient grown Au nanostructures on P doped Si(100)

    NASA Astrophysics Data System (ADS)

    Senevirathne, Indrajith; Tatham, Joshua

    2012-02-01

    Au nanostructure have wide application potential due to their noble nature, plasmonic, catalytic and specific conductive properties. Such nanostructures grown on substrate support under ambient conditions are complex but provides unique opportunities in dirty systems. In this model system Au was self assembled on solvent cleaned P doped Si(100) surface giving rise to near spherical geometry. Self assembly was initiated by magnetron sputter deposited Au at RT (300K) under high vacuum, on Si(100) which subsequently exposed to atmosphere. The micromechanical properties of the structures were measured by contact mode force curves in Atomic Force Microscopy (AFM). Both the stiffness and young modulus was measured for the nanostructures assembled and annealed at different temperatures. Initial plasticity of the nano structures was observed to reduce at annealing. Au nano structures were likely Stranski - Krastanov growth mode. Observed structure and their variations when annealed at successively higher temperatures will also be discussed. All measurements were taken by the AFM in contact intermittent contact and non-contact modes.

  1. Graphene originated 3D structures grown on the assembled nickel particles

    NASA Astrophysics Data System (ADS)

    Paronyan, Tereza; Harutyunyan, Avetik; Honda Research Institute USA Inc. Team

    2013-03-01

    Recently, the fabrication of various morphologies of graphene originated structures became very important due to the perspective of wide range of new applications. Particularly, free standing 3D structured graphene foams could be imperative in energy related areas . Here, we present the new approach of the CVD growth of 3D graphene network by using primarily sintered Ni particle's (~40 μm size) assembles as a template-catalyst via decomposition of low rate of CH4 at 1100° C based on synthesis method described earlier. SEM and Raman spectra analysis revealed the formation of graphene structure containing a single up to few layers grown on the sintered metal particles served as a catalyst-template. After etching the metal frame without using any support polymer, 3D free-standing graphene microporous structure was formed demonstrating high BET surface area. Two probe measurements of frame resistance were ~2-8 Ω. Our approach allows controllable tune the pore size and thereby the surface area of 3D graphene network through the variation of the template-catalyst particles size.

  2. Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Surender, S.; Pradeep, S.; Balaji, M.; Asokan, K.; Baskar, K.

    2017-03-01

    The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au7+ ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0 0 0 2) and (1 0 -1 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 × 1011 and 5 × 1012 ions/cm2 compared to the pristine QW structures.

  3. Superheating Suppresses Structural Disorder in Layered BiI3 Semiconductors Grown by the Bridgman Method

    SciTech Connect

    Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung; Baciak, James E.; Bliss, Mary; Nino, Juan C.

    2016-01-01

    The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In the work presented here, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate this structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown to improve crystal quality in non-layered semiconductor crystals; thus the technique was here explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient to the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, x-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.

  4. Structural modulation of nanowire interfaces grown over selectively disrupted single crystal surfaces

    NASA Astrophysics Data System (ADS)

    Garratt, E.; Nikoobakht, B.

    2015-08-01

    Recent breakthroughs in deterministic approaches to the fabrication of nanowire arrays have demonstrated the possibility of fabricating such networks using low-cost scalable methods. In this regard, we have developed a scalable growth platform for lateral fabrication of nanocrystals with high precision utilizing lattice match and symmetry. Using this planar architecture, a number of homo- and heterostructures have been demonstrated including ZnO nanowires grown over GaN. The latter combination produces horizontal, epitaxially formed crystals aligned in the plane of the substrate containing a very low number of intrinsic defects. We use such ordered structures as model systems in the interests of gauging the interfacial structural dynamics in relation to external stimuli. Nanosecond pulses of focused ion beams are used to slightly modify the substrate surface and selectively form lattice disorders in the path of nanowire growth to examine the nanocrystal, namely: its directionality and lattice defects. High resolution electron microscopies are used to reveal some interesting structural effects; for instance, a minimum threshold of surface defects that can divert nanowires. We also discuss data indicating formation of surface strains and show their mitigation during the growth process.

  5. Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Stolz, A.; Cho, E.; Dogheche, E.; Androussi, Y.; Troadec, D.; Pavlidis, D.; Decoster, D.

    2011-04-01

    The waveguide properties are reported for wide bandgap gallium nitride (GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optical characterization of GaN structures has been performed using the prism coupling technique in order to evaluate its properties and, in particular, the refractive index dispersion and the propagation loss. In order to identify the structural defects in the samples, we performed transmission electron microscopy analysis. The results suggest that AlN/GaN SPS plays a role in acting as a barrier to the propagation of threading dislocations in the active GaN epilayer; above this defective region, the dislocations density is remarkably reduced. The waveguide losses were reduced to a value around 0.65dB/cm at 1.55 μm, corresponding to the best value reported so far for a GaN-based waveguide.

  6. Superheating suppresses structural disorder in layered BiI3 semiconductors grown by the Bridgman method

    NASA Astrophysics Data System (ADS)

    Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung; Baciak, J. E.; Bliss, Mary; Nino, Juan C.

    2016-01-01

    The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In this work, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown by others to improve crystal quality in non-layered semiconductor crystals (Rudolph et al., 1996) [26]; thus the technique was explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient to the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, X-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.

  7. Structural properties of highly conductive ultra-nanocrystalline diamond films grown by hot-filament CVD

    NASA Astrophysics Data System (ADS)

    Mertens, M.; Lin, I.-N.; Manoharan, D.; Moeinian, A.; Brühne, K.; Fecht, H. J.

    2017-01-01

    In this work we show the correlation of the electrical conductivity of ultra-nanocrystalline (UNCD) diamond films grown by hot filament chemical vapor deposition (HFCVD) with their structural properties. The substrate temperature, the methane to hydrogen ratio and the pressure are the main factor influencing the growth of conductive UNCD films, which extends from electrical resistive diamond films (<10-4 S/cm) to highly conductive diamond films with a specific conductivity of 300 S/cm. High-resolution-transmission-electron-microscopy (HRTEM) and electron-energy-loss-spectroscopy (EELS) have been done on the highly conductive diamond films, to show the origin of the high electrical conductivity. The HRTEM results show random oriented diamond grains and a large amount of nano-graphite between the diamond crystals. EELS investigations are confirming these results. Raman measurements are correlated with the specific conductivity, which shows structural changes of sp2 carbons bonds as function of conductivity. Hall experiments complete the results, which lead to a model of an electron mobility based conductivity, which is influenced by the structural properties of the grain boundary regions in the ultra-nanocrystalline diamond films.

  8. RF Magnetron Sputtering Grown Cu2O Film Structural, Morphological, and Electrical Property Dependencies on Substrate Type.

    PubMed

    Ahn, Heejin; Um, Youngho

    2015-03-01

    We investigated the structural, morphological, and electrical properties of cuprous oxide (Cu2O) film dependency on substrate type. Thin films grown using RF magnetron sputtering were characterized by scanning electron microscopy, X-ray diffraction (XRD), and Hall effect measurements. Cu2O thin films were deposited onto sapphire (0001), Si (100), and MgO (110) substrates, and showed Cu2O single phase only, which was confirmed by XRD measurement. Relatively larger compressive strain existed in Cu2O film grown on sapphire and Si, while a smaller tensile strain appeared in Cu2O film grown on MgO. Cu2O thin film crystallite sizes showed a linear dependence on strain. Moreover, film carrier concentration and mobility increased with increasing strain, while resistivity decreased with decreasing strain. Cu2O film strain due to induced strain opens the possibility of controlling structural and electrical properties in device applications.

  9. Thermodynamic and structural properties of tuber starches from transgenic potato plants grown in vitro and in vivo.

    PubMed

    Wasserman, Luybov A; Sergeev, Andrey I; Vasil'ev, Viktor G; Plashchina, Irina G; Aksenova, Nina P; Konstantinova, Tatyana N; Golyanovskaya, Svetlana A; Sergeeva, Lidiya I; Romanov, Georgy A

    2015-07-10

    Potato plants harboring Phytochrome B (PHYB) gene from Arabidopsis thaliana or rol genes from Agrobacterium rhizogenes were used to study the effect of transgene expression on structure and properties of starch in tubers. Thermodynamic characteristics of starch (melting temperature, enthalpy of melting, thickness of crystalline lamellae) were shown to be variable depending on the transgene expression and plant culturing mode: in vitro or in soil. The expression of rolB or rolC genes in in vitro cultured plants evoked opposite effects on starch melting temperature and crystalline lamellae thickness. AtPHYB or rolB expression in the soil-grown potato led to the formation of more defective or more ordered starch structures, respectively, in comparison with starches of the same lines grown in vitro. On the whole, our study revealed genotype-dependent differences between starches extracted from tubers of in vitro or in vivo grown plants.

  10. Structure of GaSb layers grown on (111) GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Babkevich, A. Yu.; Cowley, R. A.; Mason, N. J.; Shields, P. A.; Stadelman, T.; Brown, S.; Mannix, D.; Paul, D.

    2004-09-01

    The structure of GaSb layers with thicknesses of 70Å, 160Å, and 1260Å grown on GaAs (111) substrates by metal-organic vapor phase epitaxy has been studied by high-resolution x-ray diffraction. The lattice mismatch between the layer and the substrate is large and most of the misfit strain is taken up by a regular network of dislocations localized at the interface between the GaSb and the GaAs. The spacing between the dislocations is about 49Å along the [1¯1¯2] direction. We observe that the layers have both the ABC … and ACB … face-centered-cubic (fcc) domains with a domain size of about 1500Å. The presence of approximately the same volume of both the domains in the overall layer suggests that the particular domain is chosen largely randomly and independent of the orientation of the substrate. In contrast, the results show that the structure of the GaAs substrate was a single fcc domain. The widths of the off-axis Bragg reflections along the [111] direction for the thinnest sample was within error the same as those for the (hhh ) Bragg reflections showing that each fcc domain penetrated through the entire layer.

  11. Structural and morphological evolution of gallium nitride nanorods grown by chemical beam epitaxy

    SciTech Connect

    Kuo, Shou-Yi; Lai, Fang-I; Chen, Wei-Chun; Hsiao, Chien-Nan; Lin, Woei-Tyng

    2009-07-15

    The morphological and structural evolution is presented for GaN nanorods grown by chemical beam epitaxy on (0001) Al{sub 2}O{sub 3} substrates. Their structural and optical properties are investigated by x-ray diffraction, scanning and transmission electron microscopy, and temperature-dependent photoluminescence measurements. While increasing the growth temperature and the flow rate of radio-frequency nitrogen radical, the three-dimensional growth mode will be enhanced to form one-dimensional nanostructures. The high density of well-aligned nanorods with a diameter of 30-50 nm formed uniformly over the entire sapphire substrate. The x-ray diffraction patterns and transmission electron microscopic images indicate that the self-assembled GaN nanorods are a pure single crystal and preferentially oriented in the c-axis direction. Particularly, the ''S-shape'' behavior with localization of {approx}10 meV observed in the temperature-dependent photoluminescence might be ascribed to the fluctuation in crystallographic defects and composition.

  12. THz pulse emission from InAs-based epitaxial structures grown on InP substrates

    NASA Astrophysics Data System (ADS)

    Nevinskas, I.; Butkutė, R.; Stanionytė, S.; Bičiūnas, A.; Geižutis, A.; Krotkus, A.

    2016-11-01

    Undoped InAs and InAs p-n junction epitaxial layers were grown on (100)-cut InP substrates with molecular beam epitaxy. The lattice difference between the substrate and the InAs layers was matched with a graded AlInAs buffer layer. The alloy composition, structural characteristics and carrier mobility of the structures were determined from the high-resolution x-ray diffraction, atomic force microscopy and Hall-effect measurements, respectively. The optical parameters of the layers were characterized by the emission of terahertz (THz) pulses when the samples were illuminated with femtosecond laser pulses. It has been found that the built-in electric field in the p-n junction enhances the THz emission. Registering THz signals in the quasi-reflection direction, the p-n junction emits more intense radiation in comparison to an undoped bulk InAs. At excitation wavelengths >1.8 μm the InAs p-n junction provides stronger THz pulses than those from (111)-cut p-InAs, the best surface THz emitter known to date. The epitaxial layers were also exposed to a constant magnetic field from neodymium permanent magnets, which further enhances THz emission and allows registering THz radiation in the line-of-sight terahertz time-domain-spectroscopy geometry.

  13. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

    SciTech Connect

    Ye, Han Yu, Zhongyuan

    2014-11-15

    Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  14. Structural and electrical properties of large area epitaxial VO2 films grown by electron beam evaporation

    NASA Astrophysics Data System (ADS)

    Théry, V.; Boulle, A.; Crunteanu, A.; Orlianges, J. C.; Beaumont, A.; Mayet, R.; Mennai, A.; Cosset, F.; Bessaudou, A.; Fabert, M.

    2017-02-01

    Large area (up to 4 squared inches) epitaxial VO2 films, with a uniform thickness and exhibiting an abrupt metal-insulator transition with a resistivity ratio as high as 2.85 × 10 4 , have been grown on (001)-oriented sapphire substrates by electron beam evaporation. The lattice distortions (mosaicity) and the level of strain in the films have been assessed by X-ray diffraction. It is demonstrated that the films grow in a domain-matching mode where the distortions are confined close to the interface which allows growth of high-quality materials despite the high film-substrate lattice mismatch. It is further shown that a post-deposition high-temperature oxygen annealing step is crucial to ensure the correct film stoichiometry and provide the best structural and electrical properties. Alternatively, it is possible to obtain high quality films with a RF discharge during deposition, which hence do not require the additional annealing step. Such films exhibit similar electrical properties and only slightly degraded structural properties.

  15. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    NASA Astrophysics Data System (ADS)

    Karuppasamy, A.

    2015-12-01

    Titanium doped tungsten oxide (Ti:WO3) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O2 atmosphere. Ti:WO3 thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10-3-5.0 × 10-3 mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm2) and tungsten (3 W/cm2) were kept constant. Ti:WO3 films deposited at an oxygen pressure of 5 × 10-3 mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm2/C at λ = 550 nm), electron/ion storage and removal capacity (Qc: -22.01 mC/cm2, Qa: 17.72 mC/cm2), reversibility (80%) and methylene blue decomposition rate (-1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO3 films.

  16. Structural analysis of fructans from Agave americana grown in South Africa for spirit production.

    PubMed

    Ravenscroft, Neil; Cescutti, Paola; Hearshaw, Meredith A; Ramsout, Ronica; Rizzo, Roberto; Timme, Elizabeth M

    2009-05-27

    Fructans isolated from Agave americana grown in South Africa are currently used for spirit production. Structural studies on water-soluble fructans were performed to facilitate the development of other applications including its use as a prebiotic. Acid hydrolysis followed by HPAEC-PAD analysis confirmed that the fructan was composed of glucose and fructose, and size analysis by HPAEC-PAD and size exclusion chromatography indicated that the saccharides have a DP range from 6 to 50. An average DP of 14 was estimated by (1)H NMR analysis. Linkage analysis and ESI-MS studies suggest that A. americana has a neofructan structure consisting of a central sucrose to which (2 → 1)- and (2 → 6)-linked β-D-Fruf chains are attached. The (2 → 1)-linked units extend from C-1 of Fru and C-6 of glucose, whereas the (2 → 6)-linked β-D-Fruf units are attached to C-6 of the central Fru. This structure accounts for the presence of equimolar amounts of 1,6-linked Glu and 1,2,6-linked Fru found in linkage analysis and the multiplicity of the NMR signals observed. Detailed ESI-MS studies were performed on fructan fractions: native, periodate oxidized/reduced, and permethylated oligomers. These derivatizations introduced mass differences between Glc and Fru following oxidation and between 1,2-, 1,6-, 2,6-, and 1,2,6-linked units after methylation. Thus, ESI-MS showed the presence of a single Glc per fructan chain and that it is predominantly internal, rather than terminal as found in inulin. These structural features were confirmed by the use of 1D and 2D NMR experiments.

  17. Surface and edge electroluminescence study of as-grown VCSEL structures

    NASA Astrophysics Data System (ADS)

    Zhao, Yongming; Sun, Yurun; He, Yang; Yu, Shuzhen; Song, Yan; Dong, Jianrong

    2016-12-01

    We present a simple quick evaluation method on vertical-cavity-surface-emitting laser (VCSEL) structures, which is designed for atomic clock working at high temperature (>350 K), to determine the temperature at which the wavelength of the VCSEL cavity mode (CM) aligns with that of the quantum well (QW) gain peak. The surface and edge electroluminescence (EL) measurements were performed non-destructively on pieces of as-grown VCSEL structures by employing soldered indium (In) contacts. The surface EL spectra determine the CM position, while the edge EL spectra are used to identify the wavelength of ground-state emission from the QW in the active region (QW gain peak). The room temperature EL measurements from a cleaved edge of the VCSEL structures indicate that the QW gain peak is at ∼780.5 nm, while the CM measured in the VCSEL surface emission EL peak (sample B) is at ∼793 nm. When the sample is heated up, the amount of CM shift with temperature can be fitted with ΔλCM =T × 0.068 nm /K, also corroborated by temperature dependence surface reflectivity measurement, and the gain peak can be fitted withλQWpeak = 780.5nm + T × 0.26 nm /K. The CM and QW gain peak of sample B will be brought into alignment at ∼365 K by fitting curve and this was confirmed by measurement. In summary, the surface and edge EL measurements using soldered In as electrodes can be very useful for post growth non-destructive characterization of VCSELs at different temperature.

  18. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  19. Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

    SciTech Connect

    Zvonkov, B. N.; Vikhrova, O. V. Dorokhin, M. V.; Kalentyeva, I. L.; Morozov, S. V.; Kryzhkov, D. I.; Yunin, P. A.

    2015-01-15

    The possibility of using the laser deposition method to grow crystalline light-emitting structures with GaAsSb/GaAs quantum wells (QWs) is experimentally demonstrated for the first time. The growth temperature of the GaAs{sub 1−x}Sb{sub x} layers is varied within the range 450–550°C; according to X-ray diffraction analyses, the content of antimony reaches x{sub Sb} ≈ 0.37 at a growth temperature of 450°C. Low-temperature (4 K) photoluminescence spectroscopy demonstrates the presence of a peak associated with the GaAsSb/GaAs QW at around 1.3 μm at the minimum laser-light pumping level. The optimal growth temperature T{sub g} = 500°C and arsine flow rate P{sub A} = 2.2 × 10{sup −8} mol/s at which the best emission properties of QWs with x{sub Sb} ∼ 0.17–0.25 are observed at temperatures of 77 and 300 K are determined. It is shown that GaAsSb/GaAs QWs with similar parameters (width and composition) grown by laser deposition at 500°C and metal-organic vapor-phase epitaxy at 580°C have comparable optical quality.

  20. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keef e, M.A.

    2004-04-15

    The atomic structure of characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in GaN:Mg thin films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects. The inside walls of the cavities were covered by GaN which grew with reverse polarity compared to the matrix. It was proposed that lateral overgrowth of the cavities restores matrix polarity on the defect base. Exchange of Ga and N sublattices within the defect compared to the matrix lead to a 0.6 +- 0.2 Angstrom displacement between the Ga sublattices of these two areas. A [1100]/3 shift with change from AB stacking in the matrix to BC within the entire pyramid is observed. Changes in the shape of the NKa edge and oxygen presence on the defect walls were detected using electron energy loss spectroscopy. These observations explain the Mg compensation and decrease of acceptor concentration in heavily doped GaN:Mg.

  1. Isolated starches from yams (Dioscorea sp) grown at the Venezuelan Amazons: structure and functional properties.

    PubMed

    Pérez, Elevina; Rolland-Sabaté, Agnès; Dufour, Dominique; Guzmán, Romel; Tapia, María; Raymundez, Marìa; Ricci, Julien; Guilois, Sophie; Pontoire, Bruno; Reynes, Max; Gibert, Olivier

    2013-10-15

    This work aimed to characterize the molecular structure and functional properties of starches isolated from wild Dioscorea yams grown at the Amazons, using conventional and up-to-date methodologies. Among the high purity starches isolated (≥99%), the chain lengths were similar, whereas variations in gelatinization profile were observed. Starches have shown varied-shaped granules with monomodal distribution, and B-type crystallinity. Variations in amylose contents found by three analyses were hypothesized being related to intermediate material. Linear chain lengths were similar, and their amylopectins showed a dense, spherical conformation and similar molecular characteristics. The average molar mass and the radius of gyration of the chromatograms of the yam amylopectin, M¯W and R¯G were ranging between 174×10(6) g mol(-1) and 237×10(6) g mol(-1), and 201 nm and 233 nm, respectively. The white yams starches were more sensible to enzymes than the other two. All starches have shown a wide range of functional and nutritional properties.

  2. Epitaxially grown zinc-blende structured Mn doped ZnO nanoshell on ZnS nanoparticles

    SciTech Connect

    Limaye, Mukta V.; Singh, Shashi B.; Date, Sadgopal K.; Gholap, R.S.; Kulkarni, Sulabha K.

    2009-02-04

    Zinc oxide in the bulk as well as in the nanocrystalline form is thermodynamically stable in the wurtzite structure. However, zinc oxide in the zinc-blende structure is more useful than that in the wurtzite structure due to its superior electronic properties as well as possibility of efficient doping. Therefore, zinc oxide shell is grown epitaxially on zinc sulphide core nanoparticles having zinc-blende structure. It is shown that doping of manganese could be achieved in zinc oxide nanoshell with zinc-blende structure.

  3. Flame Temperature Effect on the Structure of SiC Nanoparticles Grown by Laser Pyrolysis

    NASA Astrophysics Data System (ADS)

    Herlin-Boime, N.; Vicens, J.; Dufour, C.; Ténégal, F.; Reynaud, C.; Rizk, R.

    2004-02-01

    Small SiC nanoparticles (10 nm diameter) have been grown in a flow reactor by CO2 laser pyrolysis from a C2H2 and SiH4 mixture. The laser radiation is strongly absorbed by SiH4 vibration. The energy is transferred to the reactive medium and leads to the dissociation of molecules and the subsequent growth of the nanoparticles. The reaction happens with a flame. The purpose of the experiments reported in this paper is to limit the size of the growing particles to the nanometric scale for which specific properties are expected to appear. Therefore the effects of experimental parameters on the structure and chemical composition of nanoparticles have been investigated. For a given reactive mixture and gas velocity, the flame temperature is governed by the laser power. In this study, the temperature was varied from 875°C to 1100°C. The chemical analysis of the products indicate that their composition is a function of the temperature. For the same C/Si atomic ratio in the gaseous phase, the C/Si ratio in the powder increases from 0.7 at 875°C up to 1.02 at 1100°C, indicating a growth mechanism limited by C2H2 dissociation. As expected, X-ray diffraction has shown an improved crystallisation with increasing temperature. Transmission electron microscopy observations have revealed the formation of 10 nm grains for all values of laser power (or flame temperature). These grains appear amorphous at low temperature, whereas they contain an increasing number of nanocrystals (2 nm diameter) when the temperature increases. These results pave the way to a better control of the structure and chemical composition of laser synthesised SiC nanoparticles in the 10 nm range.

  4. Optimization of the structural quality of sapphire rods grown by the Stepanov method in a reducing atmosphere

    SciTech Connect

    Kryvonosov, Ye. V.; Konevskiy, P. V. Lytvynov, L. A.; Tkachenko, V. F.

    2015-03-15

    Historically, the Stepanov method has been used for growing long shaped sapphire crystals (rods, tubes, and ribbons) for practical design. The recent intense development of this technique was stimulated by sapphire applications in optics and electronics; thus, the optical and structural quality of these crystals is of great importance. The results of studying the structural quality of sapphire rods up to 18 mm in diameter grown under optimized conditions are reported.

  5. Growth and structure of MBE grown TiO2 anatase films with rutile nano-crystallites

    SciTech Connect

    Shao, Rui; Wang, Chong M.; McCready, David E.; Droubay, Timothy C.; Chambers, Scott A.

    2007-03-15

    We have grown TiO2 anatase films with rutile nanocrystalline inclusions using molecular beam epitaxy under different growth conditions. This model system is important for investigating the role of rutile/anatase interfaces in heterogeneous photocatalysis. To control the film structure, we grew a pure anatase (001) layer at a slow rate and then increased the growth rate to drive the nucleation of rutile particles. Structure analysis indicates that the rutile phase has four preferred orientations in the anatase film.

  6. Optical polarization characteristics of m-plane GaN/AlGaN quantum well structures grown on m-plane SiC substrate

    NASA Astrophysics Data System (ADS)

    Park, Seoung-Hwan; Ahn, Doyeol

    2015-12-01

    Optical polarization characteristics of m-plane GaN/AlGaN QW structures grown on m-plane SiC substrate were theoretically investigated using the multiband effective-mass theory. The QW structure grown on SiC substrate shows much larger in-plane optical polarization than that grown on GaN substrate. This is attributed to the fact that the QW structure grown on SiC substrate has larger y‧-polarized optical emission and smaller x‧-polarized optical emission than the QW structure grown on GaN substrate. Also, the magnitude of the optical polarization is found to depend on the carrier density and decrease gradually with increasing carrier density. This can be explained by the fact that, with increasing k∥, the x‧-polarized matrix element increases while the y‧-polarized matrix element rapidly decreases.

  7. Local structure and magnetic properties of B2- and B20-like ultrathin Mn films grown on Si(001)

    NASA Astrophysics Data System (ADS)

    Kahwaji, S.; Gordon, R. A.; Crozier, E. D.; Monchesky, T. L.

    2012-01-01

    The structural and magnetic properties of ultrathin Mn layers deposited onto Si(001) by molecular beam epitaxy at low temperature are reported. X-ray absorption fine structure studies reveal that the structure of the silicide layer that forms depends on the growth temperature of the capping layer. A capping layer grown at 200 °C on 0.35-monolayer (ML) Mn results in a metastable MnSi phase with a B2-like (CsCl) structure, whereas a cap grown at room temperature on 0.5 ML followed by annealing at 200 °C produces a lower coordinated MnSi phase with a B20-like structure. Increasing the Mn thickness from 0.5 to 4 monolayers does not trigger a structural transformation but drives the structure closer to MnSi-B20. The sample with B2-like structure has the largest Mn magnetic moment of 0.33 μB/Mn at T = 2 K, and a Curie temperature TC above 250 K. MnSi-B20 layers showed lower moments and much lower TC's, in line with those reported for MnSi-B20 thin films.

  8. Hole Trapping in Thermal Oxides Grown under Various Oxidation Conditions Using Avalanche Injection in Poly-Silicon Gate Structures

    DTIC Science & Technology

    2014-05-01

    Hole Trapping in Thermal Oxides Grown under Vaious Oxidation Conditions Using Avalanche Injection in Poly-Silicon Gate Structures Contractor... Avalanche In ection in Poly-Silicon Gate Structureac 12. PERSONAL AUTHOR(S) K.V. Anand, B.R. Cairns, R.J. Strain 13a. TYPE OF REPORT 13b. TIME...Trapping, Oxidation Conditions, Avalanche Injection, Poly-Silicon Gates, Oxide Traps 19. ABSTRACT (Continue on reverse If necenry W Identify by block

  9. Robust optical properties of sandwiched lateral composition modulation GaInP structure grown by molecular beam epitaxy

    SciTech Connect

    Park, Kwangwook; Kang, Seokjin; Ravindran, Sooraj; Min, Jung-Wook; Hwang, Hyeong-Yong; Jho, Young-Dahl; Lee, Yong Tak

    2016-12-26

    Double-hetero structure lateral composition modulated (LCM) GaInP and sandwiched LCM GaInP having the same active layer thickness were grown and their optical properties were compared. Sandwiched LCM GaInP showed robust optical properties due to periodic potential nature of the LCM structure, and the periodicity was undistorted even for thickness far beyond the critical layer thickness. A thick LCM GaInP structure with undistorted potential that could preserve the properties of native LCM structure was possible by stacking thin LCM GaInP structures interspaced with strain compensating GaInP layers. The sandwiched structure could be beneficial in realizing the LCM structure embedded high efficiency solar cells.

  10. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  11. Structural, FTIR, thermal and dielectric studies of gel grown manganese-copper mixed levo tartrate crystals

    NASA Astrophysics Data System (ADS)

    Joshi, Sudhir J.; Tank, Kashmira P.; Vyas, Poorvesh M.; Joshi, Mihirkumar J.

    2014-09-01

    Pure manganese tartrate and copper tartrate compounds find various applications. In the present study, manganese-copper mixed levo tartrate crystals of different compositions have been grown by single diffusion gel growth technique in silica hydro gel. Purple blue colored mainly dendrite type crystals with orthorhombic system were grown. From EDAX analysis, the estimation of the presence of copper and manganese was made in the crystal. The coloration of the crystals as well their unit cell dimensions changed with the contents of copper and manganese. The presence of various functional groups was confirmed from FTIR spectra and the effect of composition of the crystals on the spectra was identified. The crystals were found to be hydrated and thermally unstable. Results are discussed.

  12. Multilayer epitaxial graphene grown on the SiC (000- 1) surface; structure and electronic properties

    SciTech Connect

    Sprinkle, M.; Hicks, J.; Tejeda, A.; Taleb-Ibrahimi, A.; Le Fevre, P.; Bertran, F.; Tinkey, H.; Clark, M.C.; Soukiassian, P.; Martinotti, D.; Hass, J.; Conrad, E.H.

    2010-10-22

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (000{bar 1}) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  13. Effects of post-deposition annealing on the structure and magnetization of PLD grown yttrium iron garnet films

    NASA Astrophysics Data System (ADS)

    Kumar, Ravinder; Hossain, Z.; Budhani, R. C.

    2017-03-01

    We report on the recrystallization of 200 nm thick as-grown Yttrium Iron Garnet ( Y 3.4 Fe 4.6 O 12 ) films on the (111) face of gadolinium gallium garnet single crystals by post-deposition annealing. Epitaxial conversion of the as-grown microcrystalline yttrium iron garnet films was seen after annealing at 800 °C for more than 30 min both in ambient oxygen and in air. The as-grown oxygen annealed samples at 800 °C for 60 min crystallize epitaxially and show excellent figure-of-merit for saturation magnetization (MS = 3.3 μB/f.u., comparable to the bulk value) and coercivity (HC ˜ 1.1 Oe). The ambient air annealing at 800 °C with a very slow rate of cooling (2 °C/min) results in a double layer structure with a thicker unstrained epitaxial top layer having the MS and HC of 2.9 μB/f.u. and 0.12 Oe, respectively. The symmetric and asymmetric reciprocal space maps of both the samples reveal a locking of the in-plane lattice of the film to the in-plane lattice of the substrate, indicating a pseudomorphic growth. The residual stress calculated by the sin 2 ψ technique is compressive in nature. The lower layer in the air annealed sample is highly strained, whereas the top layer has negligible compressive stress.

  14. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  15. Experimental phasing for structure determination using membrane-protein crystals grown by the lipid cubic phase method

    SciTech Connect

    Li, Dianfan; Pye, Valerie E.; Caffrey, Martin

    2015-01-01

    Very little information is available in the literature concerning the experimental heavy-atom phasing of membrane-protein structures where the crystals have been grown using the lipid cubic phase (in meso) method. In this paper, pre-labelling, co-crystallization, soaking, site-specific mercury binding to genetically engineered single-cysteine mutants and selenomethionine labelling as applied to an integral membrane kinase crystallized in meso are described. An assay to assess cysteine accessibility for mercury labelling of membrane proteins is introduced. Despite the marked increase in the number of membrane-protein structures solved using crystals grown by the lipid cubic phase or in meso method, only ten have been determined by SAD/MAD. This is likely to be a consequence of the technical difficulties associated with handling proteins and crystals in the sticky and viscous hosting mesophase that is usually incubated in glass sandwich plates for the purposes of crystallization. Here, a four-year campaign aimed at phasing the in meso structure of the integral membrane diacylglycerol kinase (DgkA) from Escherichia coli is reported. Heavy-atom labelling of this small hydrophobic enzyme was attempted by pre-labelling, co-crystallization, soaking, site-specific mercury binding to genetically engineered single-cysteine mutants and selenomethionine incorporation. Strategies and techniques for special handling are reported, as well as the typical results and the lessons learned for each of these approaches. In addition, an assay to assess the accessibility of cysteine residues in membrane proteins for mercury labelling is introduced. The various techniques and strategies described will provide a valuable reference for future experimental phasing of membrane proteins where crystals are grown by the lipid cubic phase method.

  16. Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates.

    PubMed

    Bussone, Genziana; Schäfer-Eberwein, Heiko; Dimakis, Emmanouil; Biermanns, Andreas; Carbone, Dina; Tahraoui, Abbes; Geelhaar, Lutz; Bolívar, Peter Haring; Schülli, Tobias U; Pietsch, Ullrich

    2015-02-11

    We present the results of the study of the correlation between the electrical and structural properties of individual GaAs nanowires measured in their as-grown geometry. The resistance and the effective charge carrier mobility were extracted for several nanowires, and subsequently, the same nano-objects were investigated using X-ray nanodiffraction. This revealed a number of perfectly stacked zincblende and twinned zincblende units separated by axial interfaces. Our results suggest a correlation between the electrical parameters and the number of intrinsic interfaces.

  17. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    SciTech Connect

    Roberts, Joel Glenn

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  18. The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates

    NASA Astrophysics Data System (ADS)

    Loshkarev, I. D.; Vasilenko, A. P.; Trukhanov, E. M.; Kolesnikov, A. V.; Putyato, M. A.; Esin, M. Yu.; Petrushkov, M. O.

    2017-02-01

    The structure of GaP films grown by molecular-beam epitaxy on vicinal Si(1113) substrates has been studied by X-ray diffraction. It is established that the crystalline lattice of a pseudomorphic film rotates about the <110> axis toward increasing deviation from the singular orientation, while the subsequent relaxation leads to rotation in the opposite direction. This is valid for the films of both (001) and (001¯) polarities. Differences between the surface morphologies of relaxed and pseudomorphic GaP films are revealed.

  19. Evidence of rhombohedral structure within BiFeO3 thin film grown on SrTiO3

    NASA Astrophysics Data System (ADS)

    Bae, In-Tae; Naganuma, Hiroshi

    2015-03-01

    Comprehensive crystal structure analysis was performed for a BiFeO3 thin layer (∼30 nm) grown on a SrTiO3 substrate using cross-sectional transmission electron microscopy along three different zone axes. Nano-beam electron diffraction patterns combined with structure factor calculations and high-resolution transmission electron microscopy images unambiguously revealed that the BiFeO3 thin layer grew with a rhombohedral structure identical to its bulk form. No evidence of monoclinic and/or tetragonal distortion was found. The rhombohedral BiFeO3 thin layer was found to grow onto SrTiO3 by maintaining an epitaxial relationship in a manner minimizing the lattice mismatch at the BiFeO3/SrTiO3 interface.

  20. Micro structural and dielectric property analysis on hydrothermally grown gadolinium doped SnO2 crystals

    NASA Astrophysics Data System (ADS)

    Pilakavil, Jaya T.; Pradyumnan, P. P.

    2016-09-01

    A series of SnO2-Gd2O3 mixed oxides were grown in aqueous medium by varying the thermodynamic parameters by hydrothermal method. X ray diffraction data identified tetragonal phases corresponding to tin oxide. The average crystallite size of the samples were between 21 and 31 nm. The morphological studies were conducted using scanning electron microscopy and compositional purity confirmed using energy dispersive spectroscopy. Detailed dielectric studies on the samples were performed in the frequency range 100 Hz-5 MHz, which showed that dielectric constant decreases with frequency in the low frequency range, whereas remains constant at higher frequencies. Impedance analysis is used to explain the effects of grain and grain boundary on transport mechanism of Gd:SnO2 particles synthesised at various pH.

  1. Structural and morphological properties of ITO thin films grown by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2015-10-01

    Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5 Ω cm.

  2. Optical Properties of ZnO Soccer-Ball Structures Grown by Vapor Phase Transport

    NASA Astrophysics Data System (ADS)

    Nam, Giwoong; Lee, Sang-heon; Kim, Soaram; Kim, Min Su; Kim, Do Yeob; Gug Yim, Kwang; Lee, Dong-Yul; Kim, Jin Soo; Kim, Jong Su; Son, Jeong-Sik; Kim, Sung-O.; Jung, Jae Hak; Leem, Jae-Young

    2012-02-01

    ZnO soccer balls were grown on an Au-catalyzed Si(100) substrate by vapor phase transport (VPT) with a mixture of zinc oxide and graphite powders. Temperature-dependent PL was carried out to investigate the mechanism governing the quenching behavior of the PL spectra. From the PL spectra of the ZnO soccer balls at 10 K, several PL peaks were observed at 3.365, 3.318, 3.249, and 3.183 eV corresponding to excitons bound to neutral donors (DoX), a donor-acceptor pair (DAP), first-order longitudinal optical phonon replica of donor-acceptor pair (DAP-1LO), and DAP-2LO, respectively. The mixed system composed of the free exciton (FX) and DoX and the DAP radiative lifetimes were estimated with a theoretical relation between the lifetime and the spectral width. The exciton radiative lifetimes were observed to increase linearly with temperature.

  3. Structural and magnetic properties of epitaxially grown MnAs films on GaAs(110)

    NASA Astrophysics Data System (ADS)

    Kolovos-Vellianitis, D.; Herrmann, C.; Däweritz, L.; Ploog, K. H.

    2005-08-01

    MnAs films were grown by molecular beam epitaxy (MBE) on GaAs(110) substrates, since this orientation was recently identified as promising for the increase of spin lifetimes in semiconductor heterojunctions, which is of interest in spin injection experiments. A single epitaxial orientation was revealed for the MnAs films which consist of both the ferromagnetic, hexagonal α-MnAs and the paramagnetic, orthorhombic β-MnAs phase at room temperature. This phase coexistence could be imaged as a well ordered stripe pattern, whose periodicity depends on the film thickness. The study of the ferromagnetic properties shows a strong influence of the film thickness on the measured coercive fields and saturation magnetizations.

  4. Structural and magnetic properties of epitaxially grown MnAs films on GaAs(110)

    SciTech Connect

    Kolovos-Vellianitis, D.; Herrmann, C.; Daeweritz, L.; Ploog, K.H.

    2005-08-29

    MnAs films were grown by molecular beam epitaxy (MBE) on GaAs(110) substrates, since this orientation was recently identified as promising for the increase of spin lifetimes in semiconductor heterojunctions, which is of interest in spin injection experiments. A single epitaxial orientation was revealed for the MnAs films which consist of both the ferromagnetic, hexagonal {alpha}-MnAs and the paramagnetic, orthorhombic {beta}-MnAs phase at room temperature. This phase coexistence could be imaged as a well ordered stripe pattern, whose periodicity depends on the film thickness. The study of the ferromagnetic properties shows a strong influence of the film thickness on the measured coercive fields and saturation magnetizations.

  5. Investigations on the interface abruptness in CBE-grown InGaAs/InP QW structures

    NASA Astrophysics Data System (ADS)

    Antolini, A.; Bradley, P. J.; Cacciatore, C.; Campi, D.; Gastaldi, L.; Genova, F.; Iori, M.; Lamberti, C.; Papuzza, C.; Rigo, C.

    1992-02-01

    In this work we present a detailed analysis of chemical beam epitaxy-grown (CBE) InGaAs/InP multi quantum well (MQW) interfaces to explain experimental data from high quality single and multi-QWs. Our results compare well with the best published data we have obtained some outstanding results. For example, the very intense absorption peak and the high number of satellite peaks in the diffraction rocking curve, were obtained even on samples grown in non-optimized conditions. A careful use of growth interruption at the interfaces allows us to obtain monolayer (ml) interfaces. Nevertheless, the switching of the group V element at each interface leads to strain formation. This effect could become dramatic in superlattice structures with periods smaller than about 5 nm and barriers of less than 3 4 nm. More generally, the conditions for the growth of high quality single and multiple QWs is discussed in this work and these will be correlated with fourier transform photoluminesence (FTPL), high resolution x-ray diffraction (HRXRD), absorption, photo-absorption and photo-current (in PIN structures) measurements.

  6. Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

    NASA Technical Reports Server (NTRS)

    Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

    1990-01-01

    Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

  7. Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

    NASA Astrophysics Data System (ADS)

    Hojabri, Alireza

    2016-09-01

    Zirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing times were investigated. The X-ray diffraction patterns revealed that structure of films changes from amorphous to crystalline by increase of annealing times in range 60-240 min. The composition of films was determined by Rutherford back scattering spectroscopy. Atomic force microscopy results exhibited that surface morphology and roughness of films depend on the annealing time. The refractive index of the films was calculated using Swanepoel's method. The optical band gap energy of annealed films decreased from 5.50 to 5.34 eV with increasing thermal annealing time.

  8. Structural and magnetic properties of {eta}-phase manganese nitride films grown by molecular-beam epitaxy

    SciTech Connect

    Yang, Haiqiang; Al-Brithen, Hamad; Smith, Arthur R.; Borchers, J. A.; Cappelletti, R. L.; Vaudin, M. D.

    2001-06-11

    Face-centered tetragonal (fct) {eta}-phase manganese nitride films have been grown on magnesium oxide (001) substrates by molecular-beam epitaxy. For growth conditions described here, reflection high energy electron diffraction and neutron scattering show primarily two types of domains rotated by 90{degree} to each other with their c axes in the surface plane. Scanning tunneling microscopy images reveal surface domains consisting of row structures which correspond directly to the bulk domains. Neutron diffraction data confirm that the Mn moments are aligned in a layered antiferromagnetic structure. The data are consistent with the fct model of G. Kreiner and H. Jacobs for bulk Mn{sub 3}N{sub 2} [J. Alloys Compd. 183, 345 (1992)]. {copyright} 2001 American Institute of Physics.

  9. Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi Epilayers grown on Ge(111).

    PubMed

    Hamaya, K; Itoh, H; Nakatsuka, O; Ueda, K; Yamamoto, K; Itakura, M; Taniyama, T; Ono, T; Miyao, M

    2009-04-03

    For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloy Fe3-xMnxSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2(1)-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x approximately 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe3-xMnxSi alloys become half-metallic for 0.75 < or = x < or = 1.5. We discuss the possibility of room-temperature ferromagnetic Fe(3-x)Mn(x)Si/Ge epilayers with high spin polarization.

  10. Study of optical and structural properties of CZTS thin films grown by co-evaporation and spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Moreno, R.; Ramirez, E. A.; Gordillo Guzmán, G.

    2016-02-01

    Results regarding optical and structural properties of Cu2ZnSnS4 (CZTS) thin films prepared by co-evaporation using a novel procedure are compared with those obtained with CZTS films grown using a solution based route. The lattice strain ε and crystallite size D of CZTS films prepared by co-evaporation and by spray pyrolysis were estimated through X-ray diffraction (XRD) measurements using Williamson-Hall-isotropic strain model. The results of estimated average crystallite size of CZTS films by Scherrer and Williamson-Hall plot methods were compared with AFM (atomic force microscopy) measurements. It was found that the average crystallite size measured by Williamson-Hall plot methods agree quite well with AFM results. Further, information regarding the influence of preparation method on both, crystalline phases and the formation of structural defects was achieved through Raman and Urbach energy measurements.

  11. Surface electronic structure of polar NiO thin film grown on Ag(111)

    SciTech Connect

    Das, Jayanta; Menon, Krishnakumar S. R.

    2015-06-24

    The growth and structure of NiO thin films on top of Ag(111) substrate were studied where the formation of faceted surface was confirmed by Low Energy Electron Diffraction. The electronic structure of polar NiO(111) surface has been probed using photoemission techniques. The core energy levels and the valence band electronic structure were excited by x-ray and ultraviolet photons respectively. The modifications in physical structure and valence band electronic structure of the film under vacuum annealing have also been enlightened.

  12. Structural, thermal and dielectric properties of cobaltous malonate single crystals grown in limited diffusion media

    NASA Astrophysics Data System (ADS)

    Lincy, A.; Mahalakshmi, V.; Tinto, A. J.; Thomas, J.; Saban, K. V.

    2010-11-01

    Well-faceted crystals of cobaltous malonate (C 6 H 12 Co 2 O 12) have been grown by the controlled diffusion of ionic species in hydrosilica gel. Single crystal X-ray diffraction studies show that the crystal belongs to the monoclinic system with space group C2/m. The unit cell dimensions are a=12.6301(9) Å, b=7.3857(9) Å, c=7.2945(7) Å, α= γ=90°, β=120.193(9)°. The functional groups, elucidated from the FT-IR spectrum, are in conformity with the information derived from the X-ray diffraction studies. The thermal behaviour of the material has been investigated using TG-DTA in the temperature range 30-1050 °C. The optical band gap of the sample is estimated using diffuse reflectance spectroscopy (DRS). The dielectric constant and dielectric loss of the crystal have been studied over wide temperature and frequency ranges. AC conductivity measurements reveal a thermally activated process and the mechanism behind the conduction process has been discussed.

  13. Human norovirus infection of caco-2 cells grown as a three-dimensional tissue structure.

    PubMed

    Straub, Timothy M; Bartholomew, Rachel A; Valdez, Catherine O; Valentine, Nancy B; Dohnalkova, Alice; Ozanich, Richard M; Bruckner-Lea, Cynthia J; Call, Douglas R

    2011-06-01

    Human norovirus (hNoV) infectivity was studied using a three-dimensional model of large intestinal epithelium. Large intestine Caco-2 cells were grown in rotating wall vessel bioreactors for 18-21 days at 37 degrees C and then transferred to 24-well tissue culture plates where they were infected with GI.1 and GII.4 human noroviruses collected from human challenge trials and various outbreak settings, respectively. Compared with uninfected cells, transmission micrographs of norovirus-infected cells displayed evidence of shortening or total loss of apical microvilli, and vacuolization. Quantitative reverse transcription real-time PCR (qRT-PCR) indicated an approximate 2-3 log10 increase in viral RNA copies for the infected cells. A passage experiment examined both the ability for continued viral RNA and viral antigen detection. In the passaged samples 1.01x10(6) copies ml(-1) were detected by qRT-PCR. Immune electron microscopy using primary antibody to hNoV GI.1 capsids in conjunction with 6 nm gold-labelled secondary antibodies was performed on crude cellular lysates. Localization of antibody was observed in infected but not for uninfected cells. Our present findings, coupled with earlier work with the three-dimensional small intestinal INT407 model, demonstrate the utility of 3-D cell culture methods to develop infectivity assays for enteric viruses that do not readily infect mammalian cell cultures.

  14. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    DOE PAGES

    Liu, Zheng; Amani, Matin; Najmaei, Sina; ...

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymermore » substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.« less

  15. Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS2/graphene hetero-structures by chemical vapor depositions

    NASA Astrophysics Data System (ADS)

    Lin, Meng-Yu; Chang, Chung-En; Wang, Cheng-Hung; Su, Chen-Fung; Chen, Chi; Lee, Si-Chen; Lin, Shih-Yen

    2014-08-01

    Uniform large-size MoS2/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS2/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS2/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS2/graphene are achieved by CVD fabrication of graphene layers on top of the MoS2, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications.

  16. Structural, morphological and optical characterizations of ZnO:Al thin films grown on silicon substrates by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Alyamani, A.; Sayari, A.; Albadri, A.; Albrithen, H.; El Mir, L.

    2016-09-01

    The pulsed laser deposition (PLD) technique is used to grow Al-doped ZnO (AZO) thin films at 500 ° C on silicon substrates under vacuum or oxygen gas background from ablating AZO nanoparticle targets synthesized via the sol-gel process. The structural, morphological and optical properties were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. XRD and TEM images show that AZO powder has a wurtzite-type structure and is composed of small prismatic-like shape nanoparticles with an average size of 30nm. The structural properties of the AZO films grown under oxygen show no significant changes compared to those of the film grown under vacuum. However, the optical properties show a dependence on the growth conditions of the AZO films. Highly c -axis-oriented AZO thin films were obtained with grain size ˜ 15 nm. The stress in the AZO films is tensile as measured from the c -parameter. The dielectric function, the refractive index and the extinction coefficient as a function of the photon energy for the AZO films were determined by using spectroscopic ellipsometry measurements in the photon energy region from 1 to 6eV. The band gap energy was observed to slightly decrease in the presence of the O2 gas background and this may be attributed to the stress. The surface and volume energy loss functions are calculated and exhibit different behaviors in the energy range 1-6eV. Refractive indices of 1.9-2.1 in the visible region were obtained for the AZO films. Also, the electronic carrier concentration appears to be related to the presence of O2 during the growth process.

  17. Synthesis and characterization of ZnO nano and micro structures grown by low temperature spray pyrolysis and vapor transport.

    PubMed

    Agouram, S; Bushiri, M J; Montenegro, D N; Reig, C; Martínez-Tomás, M C; Muñoz-Sanjosé, V

    2012-08-01

    In this work we present a systematic study of ZnO micro and nanostructures grown by spray pyrolysis (SP) and by physical vapour transport (PVT) on glass and c-sapphire substrates at low temperatures. Optimised growth conditions have allowed to obtain homogeneous ZnO nanolayers composed of quasi-spherical nanoparticles in the range 2 to 8 nm by spray pyrolysis, while by PVT the selected growth conditions allow to produce a wide variety of morphologies (tripods, grains, arrows and wires) of nano and microsize dimension. Grazing incidence X-ray diffraction, field emission scanning electron microscopy (FE-SEM), high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and energy dispersive X-ray spectroscopy (EDX) were used as characterization techniques in the investigation of structural, morphological and compositional nature of these nanostructures in relation with the growth method.

  18. Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Vaisman, M.; Tomasulo, S.; Masuda, T.; Lang, J. R.; Faucher, J.; Lee, M. L.

    2015-02-01

    Gallium phosphide (GaP) is an attractive candidate for wide-bandgap solar cell applications, possessing the largest bandgap of the III-arsenide/phosphides without aluminum. However, GaP cells to date have exhibited poor internal quantum efficiency (IQE), even for photons absorbed by direct transitions, motivating improvements in material quality and device structure. In this work, we investigated GaP solar cells grown by molecular beam epitaxy over a range of substrate temperatures, employing a much thinner emitter than in prior work. Higher growth temperatures yielded the best solar cell characteristics, indicative of increased diffusion lengths. Furthermore, the inclusion of an AlGaP window layer improved both open-circuit voltage and short wavelength IQE.

  19. InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.

    PubMed

    Natrella, Michele; Rouvalis, Efthymios; Liu, Chin-Pang; Liu, Huiyun; Renaud, Cyril C; Seeds, Alwyn J

    2012-08-13

    We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test devices have been fabricated and characterised; the devices exhibited 0.1 A/W responsivity at 1550 nm, 12.5 GHz -3 dB bandwidth and -5.8 dBm output power at 10 GHz for a photocurrent of 4.8 mA. The use of Solid Source Molecular Beam Epitaxy enables the major issue associated with the unintentional diffusion of zinc in Metal Organic Vapour Phase Epitaxy to be overcome and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of Gas Source Molecular Beam Epitaxy.

  20. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    SciTech Connect

    Barick, B. K. E-mail: subho-dh@yahoo.co.in; Dhar, S. E-mail: subho-dh@yahoo.co.in; Rodríguez-Fernández, Carlos; Cantarero, Andres

    2015-05-15

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  1. Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy

    SciTech Connect

    Vaisman, M.; Tomasulo, S.; Masuda, T.; Lang, J. R.; Faucher, J.; Lee, M. L.

    2015-02-09

    Gallium phosphide (GaP) is an attractive candidate for wide-bandgap solar cell applications, possessing the largest bandgap of the III-arsenide/phosphides without aluminum. However, GaP cells to date have exhibited poor internal quantum efficiency (IQE), even for photons absorbed by direct transitions, motivating improvements in material quality and device structure. In this work, we investigated GaP solar cells grown by molecular beam epitaxy over a range of substrate temperatures, employing a much thinner emitter than in prior work. Higher growth temperatures yielded the best solar cell characteristics, indicative of increased diffusion lengths. Furthermore, the inclusion of an AlGaP window layer improved both open-circuit voltage and short wavelength IQE.

  2. Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si

    SciTech Connect

    Fischer, R.; Kopp, W.; Morkoc, H.; Pion, M.; Specht, A.; Burkhart, G.; Appelman, H.; McGougan, D.; Rice, R.

    1986-05-19

    We report the room-temperature pulsed operation of GaAs/(Al,Ga)As double heterojunction laser structures grown directly on (100)Si. Current thresholds of as low as 170 mA in 10-..mu..m-wide stripe lasers have been achieved at 280 K. Power output as high as 44 mW per facet was also obtained. Assuming no current spreading, the corresponding current threshold density is 6.9 kA/cm/sup 2/. Slope efficiencies and T/sub 0/ values of 0.18 W/A and 165 K, respectively, have also been obtained. These results are directly attributable to the reduction of dislocations by choosing growth conditions and step density on the surface.

  3. Structural and magnetic properties of MnPd/Fe grown on MgO(100) substrate: Ab initio studies

    NASA Astrophysics Data System (ADS)

    Malonda-Boungou, B. R.; Magnoungou, J. H. J.; M'Passi-Mabiala, B.; Demangeat, C.

    2016-07-01

    Structural and magnetic properties of ultrathin films MnPd/Fe grown on MgO(001) are investigated using a self-consistent pseudopotential plane waves method based on density functional theory in the Perdew-Burke-Ernzerhof generalized gradient approximation. The results obtained reveal the presence of an antiferromagnetic coupling between successive Mn [100] rows, combined with a ripple where Mn outward atoms exhibit a positive magnetic moment, in the case of Mn overlayer on Fe/MgO(001). In the case of MnPd monolayer ordered alloy, the c(2 × 2) structure formation is more favorable than the p(1 × 2) one, exhibiting a ferromagnetic coupling between Mn neighbor atoms with a positive induced ferromagnetic moment on Pd atoms. Pd atoms are pushed outward. For 1-ML MnxPd1 - x on Fe/MgO, the Mn absolute mean magnetization per atom increases as x coverage increases, whereas the Pd mean induced magnetic moment decreases. For systems alternating Mn and Pd monolayers on Fe/MgO(001), a complex magnetic structure is shown on Mn monolayers: changing from Mn neighboring antiferromagnetic coupling to Mn [010] rows antiferromagnetic behavior. The correlation is made between the electronic structure and the magnetic properties, by comparing filled with partially filled components (Pd, Mn and Fe) d-bands. The magnetization easy-axis changes between the in-plane and the out-of-plane orientations from Fe/MgO to MnPd/Fe/MgO systems.

  4. Crystal structure and properties of tetragonal EuAg{sub 4}In{sub 8} grown by metal flux technique

    SciTech Connect

    Subbarao, Udumula; Sarkar, Sumanta; Peter, Sebastian C.

    2015-03-15

    The compound EuAg{sub 4}In{sub 8} has been obtained as single crystals in high yield from reactions run in liquid indium. X-ray diffraction on single crystals suggests that EuAg{sub 4}In{sub 8} crystallizes in the CeMn{sub 4}Al{sub 8} structure type, tetragonal space group I4/mmm with lattice constants a=b=9.7937(2) Å and c=5.7492(2) Å. Crystal structure of EuAg{sub 4}In{sub 8} is composed of pseudo Frank–Kasper cages occupied by one europium atom in each ring, which are shared through the corner along the ab plane resulting in a three dimensional network. The magnetic susceptibility of EuAg{sub 4}In{sub 8} was measured in the temperature range 2–300 K, which obeyed Curie–Weiss law above 50 K. Magnetic moment value calculated from the fitting indicates the presence of divalent europium, which was confirmed by X-ray absorption near edge spectroscopy. Electrical resistivity measurements suggest that EuAg{sub 4}In{sub 8} is metallic in nature with a probable Fermi liquid behavior at low temperature. - Graphical abstract: The tetragonal EuAg{sub 4}In{sub 8} has been grown as single crystals from reactions run in liquid indium. Magnetic and XANES measurements suggest divalent nature of Eu and resistivity measurements suggest metallic nature. - Highlights: • EuAg{sub 4}In{sub 8} phase having tetragonal phase is grown by metal flux technique. • Magnetic and XANES measurements exhibit divalent nature of Eu in EuAg{sub 4}In{sub 8}. • Resistivity measurement suggests metallic nature and probable Fermi liquid behavior.

  5. Broadband High-Performance Infrared Antireflection Nanowires Facilely Grown on Ultrafast Laser Structured Cu Surface.

    PubMed

    Fan, Peixun; Bai, Benfeng; Long, Jiangyou; Jiang, Dafa; Jin, Guofan; Zhang, Hongjun; Zhong, Minlin

    2015-09-09

    Infrared antireflection is an essential issue in many fields such as thermal imaging, sensors, thermoelectrics, and stealth. However, a limited antireflection capability, narrow effective band, and complexity as well as high cost in implementation represent the main unconquered problems, especially on metal surfaces. By introducing precursor micro/nano structures via ultrafast laser beforehand, we present a novel approach for facile and uniform growth of high-quality oxide semiconductor nanowires on a Cu surface via thermal oxidation. Through the enhanced optical phonon dissipation of the nanowires, assisted by light trapping in the micro structures, ultralow total reflectance of 0.6% is achieved at the infrared wavelength around 17 μm and keeps steadily below 3% over a broad band of 14-18 μm. The precursor structures and the nanowires can be flexibly tuned by controlling the laser processing procedure to achieve desired antireflection performance. The presented approach possesses the advantages of material simplicity, structure reconfigurability, and cost-effectiveness for mass production. It opens a new path to realize unique functions by integrating semiconductor nanowires onto metal surface structures.

  6. Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)

    NASA Astrophysics Data System (ADS)

    Nikiforov, A. I.; Timofeev, V. A.; Tuktamyshev, A. R.; Yakimov, A. I.; Mashanov, V. I.; Gutakovskii, A. K.

    2017-01-01

    Gradual relaxation of elastic deformations in a silicon layer at the growth of a covering layer on strained layers was established. The dependence of the thickness of a silicon film, where full elastic strain relaxation occurs, on the germanium layer thickness was determined. The dependence of the critical thickness of 2D-3D transition of temperature and composition of the GeSiSn film on Si(100) was studied. Regularities of the formation of multilayer structures on quantum wells comprising pseudomorphous GeSiSn layers without relaxed buffer layers but creating the structures directly on Si. A possibility of synthesizing multilayer structures by molecular beam epitaxy was shown, and the crystal lattice constants using the high-resolution transmission electron microscopy were determined. Based on multilayer GeSiSn/Si structures the p-i-n-diodes, which demonstrated the photoresponse increasing by several orders of magnitude compared to the Sn-free structures at an increase in the Sn content, were created.

  7. Electronic, chemical and structural characterization of CNTs grown by SiC surface decomposition

    NASA Astrophysics Data System (ADS)

    Policicchio, A.; Caruso, T.; Agostino, R. G.; Maccallini, E.; Chiarello, G.; Colavita, E.; Formoso, V.; Castriota, M.; Cazzanelli, E.

    2008-03-01

    The electronic, chemical and structural properties of Carbon NanoTubes (CNTs) synthesized by Silicon Carbide surface decomposition were analyzed by Scanning Electron Microscopy (SEM), Scanning Tunnelling Microscopy/Spectroscopy (STM/STS), Electron Energy Loss (EEL) and Raman spectroscopy. A clear relationship between the bonding features and the growth condition (temperature and growth time) is obtained. The morphology of the sample investigated by SEM reveals a well-packed and aligned structure of the CNTs. Different lengths of the CNTs are observed depending on the local temperature of the sample surface. The longest observed CNTs were 500/600 nm. The STS measurements show I-V diode-like characteristic curve which can be used, for instance, as an electron collector in solar cells applications. As a perspective metallic electrode, gold, will be deposited on top of the CNTs in the future, to collect the electron current and investigated by the same techniques.

  8. Structural and optical characteristics of the hexagonal ZnO films grown on cubic MgO (001) substrates.

    PubMed

    Shen, Xiangqian; Zhou, Hua; Li, Yaping; Kang, Junyong; Zheng, Jin-Cheng; Ke, Shanming; Wang, Qingkang; Wang, Hui-Qiong

    2016-11-01

    In this Letter, we report on the structural and optical characteristics of ZnO films with a wurtzite structure grown on MgO (001) substrates with cubic structures. The ZnO films were prepared through the molecular beam epitaxy method, and growth orientation transformation from [0001] to [10-10] direction was observed with the change of growth temperature and thickness. The x-ray diffraction pole figures and in situ RHEED patterns demonstrated that the rotational relationship among grains within the ZnO films appeared in a typical two-fold rotation of about 30° for the [0001] growth orientation and four-fold rotation of about 30° or 60° for the [10-10] growth orientation, respectively. Last, we investigated their optical properties through measuring the transmission and photoluminescence spectra of the ZnO films, which showed the bulk-like bandgap feature of the ZnO films in spite of the existing growth orientation transformation.

  9. The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.

    PubMed

    Thelander, C; Dick, K A; Borgström, M T; Fröberg, L E; Caroff, P; Nilsson, H A; Samuelson, L

    2010-05-21

    The electrical and structural properties of 111B-oriented InAs nanowires grown using metal-organic precursors have been studied. On the basis of electrical measurements it was found that the trends in carbon incorporation are similar to those observed in the layer growth, where an increased As/In precursor ratio and growth temperature result in a decrease in carbon-related impurities. Our results also show that the effect of non-intentional carbon doping is weaker in InAs nanowires compared to bulk, which may be explained by lower carbon incorporation in the nanowire core. We determine that differences in crystal quality, here quantified as the stacking fault density, are not the primary cause for variations in resistivity of the material studied. The effects of some n-dopant precursors (S, Se, Si, Sn) on InAs nanowire morphology, crystal structure and resistivity were also investigated. All precursors result in n-doped nanowires, but high precursor flows of Si and Sn also lead to enhanced radial overgrowth. Use of the Se precursor increases the stacking fault density in wurtzite nanowires, ultimately at high flows leading to a zinc blende crystal structure with strong overgrowth and very low resistivity.

  10. Surface termination structure of α-Ga2O3 film grown by mist chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tamba, Daiki; Kubo, Osamu; Oda, Masaya; Osaka, Shun; Takahashi, Kazuki; Tabata, Hiroshi; Kaneko, Kentaro; Fujita, Shizuo; Katayama, Mitsuhiro

    2016-06-01

    The surface structure of α-Ga2O3(0001) grown on an α-Al2O3(0001) substrate by mist chemical vapor deposition was studied by coaxial impact-collision ion scattering spectroscopy (CAICISS) and atomic force microscopy (AFM). The minimum step height observed in the AFM image was 0.21 ± 0.01 nm, coinciding with the height of three atomic layers of α-Ga2O3(0001). It was revealed by CAICISS analysis that the surface of α-Ga2O3(0001) is terminated by a Ga layer followed by an O layer, which is consistent with the surface termination of α-Al2O3(0001). A structural model taking surface relaxation into account was also constructed by fitting the simulated curve for the azimuth angle dependence of the Ga intensity to the experimental dependence. The resultant structural model is similar to the model of an α-Al2O3(0001) surface, which indicates analogous behavior in corundum crystals.

  11. Structure and magnetic properties of electrodeposited, ferromagnetic, group 3-d element films grown onto GaAs (011) substrate

    NASA Astrophysics Data System (ADS)

    Scheck, C.; Evans, P.; Schad, R.; Zangari, G.

    2003-05-01

    Ni, Co, and iron-rich FeNi films were grown onto n-GaAs (011) substrates using electrodeposition from metal sulfate solutions, at room temperature, with a current density of 3.5 mA/cm2 at a pH of 2.5. The structure of Ni film is found to be fcc with a (111) preferred orientation, whereas Co films show a mixed fcc and hcp structure that is confirmed by x-ray diffraction and transmission electron microscopy data. The structure of iron-rich (>90%) FeNi films remains unclear at the moment. The films show a well-defined, in-plane, uniaxial anisotropy with the easy axis along the [011] GaAs direction for Ni, and [011¯] GaAs direction for Co and FeNi films (i.e., anisotropy rotated by 90° compared to Ni). Co films maintain their anisotropy even for large thicknesses (>250 nm) and so does Ni (up to 90 nm). Surprisingly, thin Ni films exhibit a larger HK value (950 Oe) than what would be expected from a purely crystalline anisotropy. This effect is ascribed to internal stresses in the as-deposited films.

  12. An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures

    NASA Astrophysics Data System (ADS)

    Ahia, C. C.; Tile, N.; Urgessa, Z. N.; Botha, J. R.; Neethling, J. H.

    2017-01-01

    In this work, the near-infrared photoluminescence (PL) of InSb/GaSb QD structures grown on GaSb substrate (2° off (100)) using atmospheric pressure Metalorganic Vapor Phase Epitaxy is investigated. The structures are analyzed before capping and after capping using scanning probe microscopy and high resolution transmission electron microscopy (HRTEM), respectively. At 10 K, with an excitation power of 2 mW, a PL peak at ∼ 732 meV is observed. Upon an increase in laser power to 120 mW, a blue shift of ∼ 8 meV is noticed. This emission typically persists up to 60-70 K, after which it becomes weak. An SPM analysis of the size distribution of uncapped dots reveals a mono-modal distribution with an average density of ∼ 5×1010 cm-2. However, a HRTEM investigation of the capped dots reveals the formation of an InGaSb quantum well-like structure, ∼ 10 nm thick, which gives rise to the PL signal mentioned above.

  13. Stoichiometric structures of defects in high-purity GaAs grown by the liquid encapsulated Czochralski method

    SciTech Connect

    Morrow, R.A.

    1988-06-15

    We analyze some existing data obtained on a GaAs sample grown by the liquid encapsulated Czochralski (LEC) method from a near-stoichiometric melt after the sample was cycled through various thermal processes. By using the constraint of constant deviation from stoichiometry we are led to suggest that the defects observed or inferred to exist in the sample have the following properties: (1) the acceptor associated with the 1.45-eV photoluminescence signal has the stoichiometric structure of Ga/sub As/ if doubly charged or of V/sub Ga/Ga/sub As/ if singly charged; (2) the (presumed) donor at E/sub c/-0.134 eV has the stoichiometric structure of V/sub As/; (3) another (inferred) acceptor has the stoichiometric structure of V/sub Ga/; and (4) the very shallow donor at E/sub c/-0.003 eV is the precursor of EL2 and becomes EL2 upon reaction with V/sub Ga/ or its stoichiometric equivalent

  14. Structure of a heterogeneous, glycosylated, lipid-bound, in vivo-grown protein crystal at atomic resolution from the viviparous cockroach Diploptera punctata

    PubMed Central

    Banerjee, Sanchari; Coussens, Nathan P.; Gallat, François-Xavier; Sathyanarayanan, Nitish; Srikanth, Jandhyam; Yagi, Koichiro J.; Gray, James S. S.; Tobe, Stephen S.; Stay, Barbara; Chavas, Leonard M. G.; Ramaswamy, Subramanian

    2016-01-01

    Macromolecular crystals for X-ray diffraction studies are typically grown in vitro from pure and homogeneous samples; however, there are examples of protein crystals that have been identified in vivo. Recent developments in micro-crystallography techniques and the advent of X-ray free-electron lasers have allowed the determination of several protein structures from crystals grown in cellulo. Here, an atomic resolution (1.2 Å) crystal structure is reported of heterogeneous milk proteins grown inside a living organism in their functional niche. These in vivo-grown crystals were isolated from the midgut of an embryo within the only known viviparous cockroach, Diploptera punctata. The milk proteins crystallized in space group P1, and a structure was determined by anomalous dispersion from the native S atoms. The data revealed glycosylated proteins that adopt a lipocalin fold, bind lipids and organize to form a tightly packed crystalline lattice. A single crystal is estimated to contain more than three times the energy of an equivalent mass of dairy milk. This unique storage form of nourishment for developing embryos allows access to a constant supply of complete nutrients. Notably, the crystalline cockroach-milk proteins are highly heterogeneous with respect to amino-acid sequence, glycosylation and bound fatty-acid composition. These data present a unique example of protein heterogeneity within a single in vivo-grown crystal of a natural protein in its native environment at atomic resolution. PMID:27437115

  15. Structure of a heterogeneous, glycosylated, lipid-bound, in vivo-grown protein crystal at atomic resolution from the viviparous cockroach Diploptera punctata.

    PubMed

    Banerjee, Sanchari; Coussens, Nathan P; Gallat, François-Xavier; Sathyanarayanan, Nitish; Srikanth, Jandhyam; Yagi, Koichiro J; Gray, James S S; Tobe, Stephen S; Stay, Barbara; Chavas, Leonard M G; Ramaswamy, Subramanian

    2016-07-01

    Macromolecular crystals for X-ray diffraction studies are typically grown in vitro from pure and homogeneous samples; however, there are examples of protein crystals that have been identified in vivo. Recent developments in micro-crystallography techniques and the advent of X-ray free-electron lasers have allowed the determination of several protein structures from crystals grown in cellulo. Here, an atomic resolution (1.2 Å) crystal structure is reported of heterogeneous milk proteins grown inside a living organism in their functional niche. These in vivo-grown crystals were isolated from the midgut of an embryo within the only known viviparous cockroach, Diploptera punctata. The milk proteins crystallized in space group P1, and a structure was determined by anomalous dispersion from the native S atoms. The data revealed glycosylated proteins that adopt a lipocalin fold, bind lipids and organize to form a tightly packed crystalline lattice. A single crystal is estimated to contain more than three times the energy of an equivalent mass of dairy milk. This unique storage form of nourishment for developing embryos allows access to a constant supply of complete nutrients. Notably, the crystalline cockroach-milk proteins are highly heterogeneous with respect to amino-acid sequence, glycosylation and bound fatty-acid composition. These data present a unique example of protein heterogeneity within a single in vivo-grown crystal of a natural protein in its native environment at atomic resolution.

  16. Comparison between structural properties of bulk GaN grown under high N pressure and GaN grown by other methods

    SciTech Connect

    Liliental-Weber, Z.; Jasinski, J.; Washburn, J.

    2002-07-31

    In this paper defects formed in GaN grown by different methods are reviewed. Formation of particular defects are often related to the crystallographic direction in which the crystals grow. For bulk crystals the highest growth rates are observed for directions perpendicular to the c-axis. Threading dislocations and nanopipes along the c-axis are not formed in these crystals, but polarity of the growth direction plays a role concerning defects that are formed and surface roughness. For growth of homoepitaxial layers, where growth is forced to take place in the c-direction threading dislocations are formed and their density is related to the purity of constituents used for growth and to substrate surface inhomogeneities. In heteroepitaxial layers two other factors: lattice mismatch and thermal expansion mismatch are related to the formation of dislocations. Doping of crystals can also lead to formation of defects characteristic for a specific dopant. This type of defects tends to be growth method independent but can depend on growth polarity.

  17. Structural Modifications of Fructans in Aloe barbadensis Miller (Aloe Vera) Grown under Water Stress.

    PubMed

    Salinas, Carlos; Handford, Michael; Pauly, Markus; Dupree, Paul; Cardemil, Liliana

    2016-01-01

    Aloe barbadensis Miller (Aloe vera) has a Crassulaceae acid metabolism which grants the plant great tolerance to water restrictions. Carbohydrates such as acemannans and fructans are among the molecules responsible for tolerating water deficit in other plant species. Nevertheless, fructans, which are prebiotic compounds, have not been described nor studied in Aloe vera, whose leaf gel is known to possess beneficial pharmaceutical, nutritional and cosmetic properties. As Aloe vera is frequently cultivated in semi-arid conditions, like those found in northern Chile, we investigated the effect of water deficit on fructan composition and structure. For this, plants were subjected to different irrigation regimes of 100%, 75%, 50% and 25% field capacity (FC). There was a significant increase in the total sugars, soluble sugars and oligo and polyfructans in plants subjected to water deficit, compared to the control condition (100% FC) in both leaf tips and bases. The amounts of fructans were also greater in the bases compared to the leaf tips in all water treatments. Fructans also increase in degree of polymerization with increasing water deficit. Glycosidic linkage analyses by GC-MS, led to the conclusion that there are structural differences between the fructans present in the leaves of control plants with respect to plants irrigated with 50% and 25% FC. Therefore, in non-stressed plants, the inulin, neo-inulin and neo-levan type of fructans predominate, while in the most stressful conditions for the plant, Aloe vera also synthesizes fructans with a more branched structure, the neofructans. To our knowledge, the synthesis and the protective role of neo-fructans under extreme water deficit has not been previously reported.

  18. Structural Modifications of Fructans in Aloe barbadensis Miller (Aloe Vera) Grown under Water Stress

    PubMed Central

    Salinas, Carlos; Cardemil, Liliana

    2016-01-01

    Aloe barbadensis Miller (Aloe vera) has a Crassulaceae acid metabolism which grants the plant great tolerance to water restrictions. Carbohydrates such as acemannans and fructans are among the molecules responsible for tolerating water deficit in other plant species. Nevertheless, fructans, which are prebiotic compounds, have not been described nor studied in Aloe vera, whose leaf gel is known to possess beneficial pharmaceutical, nutritional and cosmetic properties. As Aloe vera is frequently cultivated in semi-arid conditions, like those found in northern Chile, we investigated the effect of water deficit on fructan composition and structure. For this, plants were subjected to different irrigation regimes of 100%, 75%, 50% and 25% field capacity (FC). There was a significant increase in the total sugars, soluble sugars and oligo and polyfructans in plants subjected to water deficit, compared to the control condition (100% FC) in both leaf tips and bases. The amounts of fructans were also greater in the bases compared to the leaf tips in all water treatments. Fructans also increase in degree of polymerization with increasing water deficit. Glycosidic linkage analyses by GC-MS, led to the conclusion that there are structural differences between the fructans present in the leaves of control plants with respect to plants irrigated with 50% and 25% FC. Therefore, in non-stressed plants, the inulin, neo-inulin and neo-levan type of fructans predominate, while in the most stressful conditions for the plant, Aloe vera also synthesizes fructans with a more branched structure, the neofructans. To our knowledge, the synthesis and the protective role of neo-fructans under extreme water deficit has not been previously reported. PMID:27454873

  19. Structural and optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition.

    PubMed

    Prakash, G V; Daldosso, N; Degoli, E; Iacona, F; Cazzanelli, M; Gaburro, Z; Pucker, G; Dalba, P; Rocca, F; Ceretta Moreira, E; Franzò, G; Pacifici, D; Priolo, F; Arcangeli, C; Filonov, A B; Ossicini, S; Pavesi, L

    2001-06-01

    Silicon nanocrystals (Si-nc) embedded in SiO2 matrix have been prepared by high temperature thermal annealing (1000-1250 degrees C) of substoichiometric SiOx films deposited by plasma-enhanced chemical vapor deposition (PECVD). Different techniques have been used to examine the optical and structural properties of Si-nc. Transmission electron microscopy analysis shows the formation of nanocrystals whose sizes are dependent on annealing conditions and deposition parameters. The spectral positions of room temperature photoluminescence are systematically blue shifted with reduction in the size of Si-nc obtained by decreasing the annealing temperature or the Si content during the PECVD deposition. A similar trend has been found in optical absorption measurements. X-ray absorption fine structure measurements indicate the presence of an intermediate region between the Si-nc and the SiO2 matrix that participates in the light emission process. Theoretical observations reported here support these findings. All these efforts allow us to study the link between dimensionality, optical properties, and the local environment of Si-nc and the surrounding SiO2 matrix.

  20. Structural changes induced spin-reorientation of ultrathin Mn films grown on Ag(001)

    NASA Astrophysics Data System (ADS)

    Ouarab, N.; Haroun, A.; Baadji, N.

    2016-12-01

    The strained body centered tetragonal (bct) Mn ultrathin film from lattice parameter a=2.89 Å to lattice value of 2.73 Å induces anti-ferromagnetic behavior between Mn layers. The magnetic easy axis of Mn film was demonstrated theoretically to switch from the in-plane to out-of-plane by magneto-optical Kerr effect investigation. By including spin-orbit coupling in full potential linearized augmented plane waves and linearized muffin-tin orbitals methods, manganese ultrathin film displays different magnetic behaviors and the spin-reorientation transition is shown to be correlated to these structural changes. The calculated magnetic moment of manganese planes are enhanced and reach a value of ~4.02 μB. The polar magneto-optical Kerr effect is calculated for a photon energy range extended to 15 eV. It shows a pronounced peak in visible light.

  1. Properties of Inconel 625 Mesh Structures Grown by Electron Beam Additive Manufacturing

    SciTech Connect

    List III, Frederick Alyious; Dehoff, Ryan R; Lowe, Larry E; Sames, William J

    2014-01-01

    Relationships between electron beam parameters (beam current, beam speed, and beam focus) and physical properties (mass, diameter, elastic modulus, and yield strength) have been investigated for Inconel 625 mesh cubes fabricated using an additive manufacturing technology based on electron beam melting. The elastic modulus and yield strength of the mesh cubes have been systematically varied by approximately a factor of ten by changing the electron beam parameters. Simple models have been used to understand better these relationships. Structural anisotropies of the mesh associated with the layered build architecture have been observed and may contribute, along with microstructural anisotropies, to the anisotropic mechanical properties of the mesh. Knowledge of this kind is likely applicable to other metal and alloy systems and is essential to rapidly realize the full potential of this burgeoning technology.

  2. Magnetostrictive iron gallium thin films grown onto antiferromagnetic manganese nitride: Structure and magnetism

    NASA Astrophysics Data System (ADS)

    Mandru, Andrada-Oana; Corbett, Joseph P.; Richard, Andrea L.; Gallagher, James; Meng, Keng-Yuan; Ingram, David C.; Yang, Fengyuan; Smith, Arthur R.

    2016-10-01

    We report structural and magnetic properties of magnetostrictive Fe100 -xGax (x ≈ 15) alloys when deposited onto antiferromagnetic manganese nitride and non-magnetic magnesium oxide substrates. From X-ray diffraction measurements, we find that the FeGa films are single crystalline. Scanning tunneling microscopy imaging reveals that the surface morphologies are dictated by the growth temperature, composition, and substrate. The magnetic properties can be tailored by the substrate, as found by magnetic force microscopy imaging and vibrating sample magnetometry measurements. In addition to pronounced tetragonal deformations, depositing FeGa onto manganese nitride leads to the formation of stripe-like magnetic domain patterns and to the appearance of perpendicular magnetic anisotropy.

  3. Structural and morphological properties of metallic thin films grown by pulsed laser deposition for photocathode application

    NASA Astrophysics Data System (ADS)

    Lorusso, A.; Gontad, F.; Caricato, A. P.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-03-01

    In this work yttrium and lead thin films have been deposited by pulsed laser deposition technique and characterized by ex situ different diagnostic methods. All the films were adherent to the substrates and revealed a polycrystalline structure. Y films were uniform with a very low roughness and droplet density, while Pb thin films were characterized by a grain morphology with a relatively high roughness and droplet density. Such metallic materials are studied because they are proposed as a good alternative to copper and niobium photocathodes which are generally used in radiofrequency and superconducting radiofrequency guns, respectively. The photoemission performances of the photocathodes based on Y and Pb thin films have been also studied and discussed.

  4. Characterization of as-grown and annealed GaAs: Structural defects and electrical properties

    SciTech Connect

    Lee, B.T.

    1988-07-01

    Structural defects in GaAs related to excess As were characterized and their behavior upon heat treatments studied. The observed defects included precipitates and dislocations. Results showed most of the precipitates in As-rich GaAs to the rhombohedral arsenic. Two exceptions were observed in an In-doped LEC (liguid encapsulated Czochralski) GaAs, which were As-rich but could not be further identified. Some of the observed As precipitates showed a simple orientation relationship with the matrix which yields structural coherence between As precipitates and GaAs matrix. Other As precipitates showed less coherent orientation. The dislocation loops in As-rich GaAs consisted a faulted loop with Shockley type Burgers vector and a perfect loop associated with an extra /l brace/111/r brace/ plane. It was proposed that these loops were formed as a result of dual condensation of both excess As interstitials and Ga vacancies, followed by generation and movement of Shockley partial dislocations. These precipitates and dislocation loops disappear after annealing, indicating a solvus temperature between 600--700/degree/C. The EL2 concentration increased as the defects dissolved, showing the defects to be the source of the excess As required to form EL2. The implication is that the As interstitial and Ga vacancies coexist in GaAs at high temperatures, which indicates that these point defects are responsible for the formation of arsenic antisites by direct combination. During the cooling period, they freeze into the matrix as point defects during a rapid cooling and condense as dislocation loops and precipitates during very slow cooling, in the dislocation-free region of the crystals. Around dislocations, the excess As precipitates heterogeneously even during rapid cooling. 217 refs.

  5. Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

    NASA Astrophysics Data System (ADS)

    Fedoseeva, Yu. V.; Pozdnyakov, G. A.; Okotrub, A. V.; Kanygin, M. A.; Nastaushev, Yu. V.; Vilkov, O. Y.; Bulusheva, L. G.

    2016-11-01

    Since amorphous oxygenated hydrocarbon (COxHy) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of COxHy films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the COxHy films, deposited at 300 and 500 °C, were mainly composed of the sp2-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

  6. Inhibition of a structural phase transition in one-dimensional organometal halide perovskite nanorods grown inside porous silicon nanotube templates

    NASA Astrophysics Data System (ADS)

    Arad-Vosk, N.; Rozenfeld, N.; Gonzalez-Rodriguez, R.; Coffer, J. L.; Sa'ar, A.

    2017-02-01

    One-dimensional organo-metal halide perovskite (C H3N H3Pb I3 ) nanorods whose diameter and length are dictated by the inner size of porous silicon nanotube templates have been grown, characterized, and compared to bulk perovskites in the form of microwires. We have observed a structural phase transition for bulk perovskites, where the crystal structure changes from tetragonal to orthorhombic at about 160 K, as opposed to small diameter one-dimensional perovskite nanorods, of the order of 30-70 nm in diameter, where the phase transition is inhibited and the dominant phase remains tetragonal. Two major experimental techniques, infrared absorption spectroscopy and photoluminescence, were utilized to probe the temperature dependence of the perovskite phases over the 4-300 K temperature range. Yet, different characteristics of the phase transition were measured by the two spectroscopic methods and explained by the presence of small, tetragonal inclusions embedded in the orthorhombic phase. The inhibition of the phase transition is attributed to the large surface area of these one-dimensional perovskite nanorods, which gives rise to a large stress that, in turn, prevents the formation of the orthorhombic phase. The absence of phase transition enables the measurement of the tetragonal bandgap energy down to low temperatures.

  7. Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography

    NASA Astrophysics Data System (ADS)

    Wei, Tongbo; Wu, Kui; Lan, Ding; Yan, Qingfeng; Chen, Yu; Du, Chengxiao; Wang, Junxi; Zeng, Yiping; Li, Jinmin

    2012-11-01

    We report a low-cost and high-throughput process for the fabrication of two-dimensional SiO2 photonic crystal (PhC) by nanospherical-lens photolithography method to improve the light extraction of GaN-based light-emitting diodes (LEDs). The PhC structures were realized by the selective area growth of p-GaN using SiO2 nanodisks, which were patterned utilizing a self-assembled nanosphere as an optical lens. Without prejudice to the electrical properties of LEDs, the light output power (at 350 mA) of LEDs with the SiO2 and corresponding air-hole PhC was enhanced by 71.3% and 49.3%, respectively, compared to that without PhC. The LEDs with selectively grown PhC structures were found to exhibit partial compression strain release and reduced emission divergence. The finite-difference time-domain simulation was also performed to further reveal the emission characteristics of PhC LEDs.

  8. Substrate dependent structural, optical and electrical properties of ZnS thin films grown by RF sputtering

    NASA Astrophysics Data System (ADS)

    Pathak, Trilok K.; Kumar, Vinod; Purohit, L. P.; Swart, H. C.; Kroon, R. E.

    2016-10-01

    Zinc sulphide (ZnS) films are of great importance for applications in various optoelectronic devices. ZnS thin films were grown on glass, indium tin oxide (ITO) and Corning glass substrates by radio-frequency magnetron sputtering at a temperature of 373 K and a comparative study of the structural, optical and electrical properties was performed using X-ray diffraction (XRD), scanning electron microscopy, optical and current-voltage (I-V) measurements. The XRD patterns showed that the sputtered thin films exhibited good crystallinity with the (111) peak around 2θ=28.3° indicating preferential orientation of the cubic structure. The maximum strain and most densely packed grains were obtained for the Corning glass substrate. The transmittance spectra of the films were measured in the wavelength range from 200 to 800 nm, showing that the films are about 77% transparent in the visible region. A slight change of 3.50 eV to 3.54 eV was found for the bandgap of the films deposited on different substrates. The ZnS thin films deposited on Corning glass show better crystallinity, morphology and I-V characteristics than that deposited on ordinary glass and ITO substrates.

  9. Opto-structural studies of well-dispersed silicon nano-crystals grown by atom beam sputtering

    PubMed Central

    2012-01-01

    Synthesis and characterization of nano-crystalline silicon grown by atom beam sputtering technique are reported. Rapid thermal annealing of the deposited films is carried out in Ar + 5% H2 atmosphere for 5 min at different temperatures for precipitation of silicon nano-crystals. The samples are characterized for their optical and structural properties using various techniques. Structural studies are carried out by micro-Raman spectroscopy, Fourier transform infrared spectroscopy, transmission electron microscopy (TEM), high resolution transmission electron microscopy, and selected area electron diffraction. The optical properties are studied by photoluminescence and UV-vis absorption spectroscopy, and bandgaps are evaluated. The bandgaps are found to decrease after rapid thermal treatment. The micro-Raman studies show the formation of nano-crystalline silicon in as-deposited as well as annealed films. The shifting and broadening in Raman peak suggest formation of nano-phase in the samples. Results of micro-Raman, photoluminescence, and TEM studies suggest the presence of a bimodal crystallite size distribution for the films annealed at higher temperatures. The results show that atom beam sputtering is a suitable technique to synthesize nearly mono-dispersed silicon nano-crystals. The size of the nano-crystals may be controlled by varying annealing parameters. PMID:23031449

  10. Structural, electrical, and optical characterization of coalescent p-n GaN nanowires grown by molecular beam epitaxy

    SciTech Connect

    Kolkovsky, Vl.; Zytkiewicz, Z. R.; Sobanska, M.; Klosek, K.; Korona, K. P.

    2015-12-14

    The electrical, structural, and optical properties of coalescent p-n GaN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrate are investigated. From photoluminescence measurements the full width at half maximum of bound exciton peaks AX and DA is found as 1.3 and 1.2 meV, respectively. These values are lower than those reported previously in the literature. The current-voltage characteristics show the rectification ratio of about 10{sup 2} and the leakage current of about 10{sup −4} A/cm{sup 2} at room temperature. We demonstrate that the thermionic mechanism is not dominant in these samples and spatial inhomogeneties and tunneling processes through a ∼2 nm thick SiN{sub x} layer between GaN and Si could be responsible for deviation from the ideal diode behavior. The free carrier concentration in GaN NWs determined by capacitance-voltage measurements is about 4 × 10{sup 15 }cm{sup −3}. Two deep levels (H190 and E250) are found in the structures. We attribute H190 to an extended defect located at the interface between the substrate and the SiN{sub x} interlayer or near the sidewalls at the bottom of the NWs, whereas E250 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.

  11. Structural, electrical, and optical characterization of coalescent p-n GaN nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kolkovsky, Vl.; Zytkiewicz, Z. R.; Korona, K. P.; Sobanska, M.; Klosek, K.

    2015-12-01

    The electrical, structural, and optical properties of coalescent p-n GaN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrate are investigated. From photoluminescence measurements the full width at half maximum of bound exciton peaks AX and DA is found as 1.3 and 1.2 meV, respectively. These values are lower than those reported previously in the literature. The current-voltage characteristics show the rectification ratio of about 102 and the leakage current of about 10-4 A/cm2 at room temperature. We demonstrate that the thermionic mechanism is not dominant in these samples and spatial inhomogeneties and tunneling processes through a ˜2 nm thick SiNx layer between GaN and Si could be responsible for deviation from the ideal diode behavior. The free carrier concentration in GaN NWs determined by capacitance-voltage measurements is about 4 × 1015 cm-3. Two deep levels (H190 and E250) are found in the structures. We attribute H190 to an extended defect located at the interface between the substrate and the SiNx interlayer or near the sidewalls at the bottom of the NWs, whereas E250 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.

  12. Structural and optical investigations on seed layer assisted hydrothermally grown ZnO nanorods on flat and textured substrates

    NASA Astrophysics Data System (ADS)

    Rayerfrancis, Arokiyadoss; Balaji Bhargav, P.; Ahmed, Nafis; Balaji, C.; Dhara, Sandip

    2016-12-01

    In this article we report the synthesis of vertically aligned ZnO nanorods on plain as well as textured fluorine doped tin oxide (FTO) coated glass substrate using hydrothermal method. Prior to hydrothermal method, AZO seed layer of thickness 5, 10 and 15 nm were deposited on the chosen substrates by DC magnetron sputtering. The as-grown nanorods were annealed at 450 °C for 3 h to improve the crystallinity. Morphology and structure of the nanorods was observed by field emission scanning electron microscopy. The formation of wurtzite structure was confirmed through x-ray diffraction studies. The optical mode of ZnO, E2 (high) at 434 cm-1 present in the samples was confirmed by Raman spectroscopy. The seed layer assisted growth of ZnO nanorods were defect free, which is confirmed from the photoluminescence spectra, and the intensity of band to band emission is much greater than the emission from the defects at the deep level.

  13. {CdTe(111) B}/{Si(100) } structure grown by metalorganic vapor phase epitaxy with Te adsorption and annealing

    NASA Astrophysics Data System (ADS)

    Nishino, Hironori; Nishijima, Yoshito

    1996-10-01

    We studied the crystal structure of CdTe(111)B layers directly grown on Si(100) by MOVPE using a new pre-growth process, which includes a metalorganic Te adsorption and an annealing process. In this paper, we discussed the CdTe structure from the three aspects of antiphase, twinning and tilt. We investigated the dependence of the antiphase content in CdTe(111)B on the anneal temperature and the Si misorientation angle. From the results, we assume that the origin of the antiphase formation is the difference in the arrangement of adsorbed Te atoms. Te arrangement leading to antiphase formation occurs on Si terraces away from steps at relatively low temperatures. We reduced most of the twinning in epilayers by optimizing the {VI}/{II} ratio. We think the remaining twinning was confined to near the interface and it nucleated from the Te arrangement on terraces. We found that the Si(100)-CdTe(111) tilt was much smaller than that expected from the well-known Nagai model. We propose that a negative tilt is induced to reduce the lateral mismatch. To adjust the lateral distance of unit cells, 30 CdTe lattices match to 31 Si lattices. CdTe(111)B planes are inclined to reduce the remaining mismatch between two lattices. This initial tilt also causes wider CdTe terraces. We modified Nagai's tilting model for this reconstructed CdTe surface. The total tilt angle is defined by these two tilting mechanisms.

  14. Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Linzen, S.; Ziegler, M.; Astafiev, O. V.; Schmelz, M.; Hübner, U.; Diegel, M.; Il’ichev, E.; Meyer, H.-G.

    2017-03-01

    We studied and optimised the properties of ultrathin superconducting niobium nitride films fabricated with a plasma-enhanced atomic layer deposition (PEALD) process. By adjusting process parameters, the chemical embedding of undesired oxygen into the films was minimised and a film structure consisting of mainly polycrystalline niobium nitride with a small fraction of amorphous niobium oxide and niobium oxo-nitrides were formed. For this composition a critical temperature of 13.8 K and critical current densities of 7 × 106 A cm–2 at 4.2 K were measured on 40 nm thick films. A fundamental correlation between these superconducting properties and the crystal lattice size of the cubic δ-niobium-nitride grains were found. Moreover, the film thickness variation between 40 and 2 nm exhibits a pronounced change of the electrical conductivity at room temperature and reveals a superconductor–insulator-transition in the vicinity of 3 nm film thickness at low temperatures. The thicker films with resistances up to 5 kΩ per square in the normal state turn to the superconducting one at low temperatures. The perfect thickness control and film homogeneity of the PEALD growth make such films extremely promising candidates for developing novel devices on the coherent quantum phase slip effect.

  15. Structural Characteristics of La2O3 Thin Film Grown on LaB6

    NASA Astrophysics Data System (ADS)

    Kafadaryan, Y. A.; Petrosyan, S. I.; Badalyan, G. R.; Lazaryan, V. G.; Shirinyan, G. H.; Aghamalyan, N. R.; Hovsepyan, R. K.; Semerjian, H. S.; Igityan, A. S.; Kuzanyan, A. M.

    Within the framework of hexagonal lanthanum oxide (h-La2O3) formation, lanthanum hexaboride film on sapphire substrate (LaB6/Al2O3) was oxidized at different temperatures (700-1000 °C) under reduced atmospheric pressure (1·10-2,1.5·10-1Torr) during 30 min. The composition evolution of La2O3/LaB6 structure versus annealing temperature has been studied using XRD, FIR reflectivity spectroscopy, SEM and electron probe X-ray microanalysis (EDS). The annealing of the LaB6 film at T=700 °C under air pressure of 1·10-2 Torr generates thin La2O3 layer which exhibits as inferred from XRD the hexagonal phase. The hydratation of La2O3/LaB6/Al2O3 in distilled water for 30 min and postannealing at 900 °C under air pressure of 1.5·10-1 Torr transform h-La2O3 into hexagonal La(OH)3 phase accompanied monoclinic LaO(OH) and lanthanum oxide carbonate hydrate species.

  16. Structural, compositional, and photoluminescence characterization of thermal chemical vapor deposition-grown Zn₃N₂ microtips

    SciTech Connect

    Wei, Pai-Chun E-mail: tsengcm@phys.sinica.edu.tw; Chang, Chung-Chieh; Hsu, Chia-Hao; Tong, Shih-Chang; Shen, Ji-Lin; Tseng, Chuan-Ming E-mail: tsengcm@phys.sinica.edu.tw

    2014-10-14

    The catalytic growth of Zn₃N₂ using guided-stream thermal chemical vapor deposition has been investigated within the parameter range of acicular growth to obtain uniform microtips with a high crystalline quality. The cubic anti-bixbyite crystal structure of Zn₃N₂ microtips and its related phonon mode are revealed by X-ray diffraction and Raman spectroscopy, respectively. The surface morphologies of pure and surface-oxidized Zn₃N₂ microtips are depicted by scanning electron microscopy and show the crack formation on the surface-oxidized Zn₃N₂ microtips. The spatial element distribution map confirms the VLS growth mechanism for Zn₃N₂ microtips and reveals the depth profile of zinc, nitrogen, oxygen, and nickel elements. Photoluminescence (PL) spectra of Zn₃N₂ microtips show a sharp infrared band-to-band emission peak at 1.34 eV with a full width at half maximum of ~100 meV and a very broad oxygen-related defect band emission peak centered at ~0.85 eV.

  17. Structural, electronic and photovoltaic characterization of multiwalled carbon nanotubes grown directly on stainless steel

    PubMed Central

    Scarselli, Manuela; Gobbo, Silvano Del; Castrucci, Paola; Gautron, Eric; De Crescenzi, Maurizio

    2012-01-01

    Summary We have taken advantage of the native surface roughness and the iron content of AISI-316 stainless steel to grow multiwalled carbon nanotubes (MWCNTs) by chemical vapour deposition without the addition of an external catalyst. The structural and electronic properties of the synthesized carbon nanostructures have been investigated by a range of electron microscopy and spectroscopy techniques. The results show the good quality and the high graphitization degree of the synthesized MWCNTs. Through energy-loss spectroscopy we found that the electronic properties of these nanostructures are markedly different from those of highly oriented pyrolytic graphite (HOPG). Notably, a broadening of the π-plasmon peak in the case of MWCNTs is evident. In addition, a photocurrent was measured when MWCNTs were airbrushed onto a silicon substrate. External quantum efficiency (EQE) and photocurrent values were reported both in planar and in top-down geometry of the device. Marked differences in the line shapes and intensities were found for the two configurations, suggesting that two different mechanisms of photocurrent generation and charge collection are in operation. From this comparison, we are able to conclude that the silicon substrate plays an important role in the production of electron–hole pairs. PMID:23016140

  18. Structure and ionic conductivity of well-aligned polycrystalline sodium titanogallate grown by reactive diffusion

    SciTech Connect

    Hasegawa, Ryo; Okabe, Momoko; Asaka, Toru; Ishizawa, Nobuo; Fukuda, Koichiro

    2015-09-15

    We prepared the b-axis-oriented polycrystalline Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} (NTGO) embedded in Ga{sub 2}O{sub 3}-doped Na{sub 2}Ti{sub 4}O{sub 9} matrix using the reactive diffusion technique. When the sandwich-type Ga{sub 2}TiO{sub 5}/NaGaO{sub 2}/Ga{sub 2}TiO{sub 5} diffusion couple was heated at 1323 K for 24 h, the NTGO polycrystal was readily formed in the presence of a liquid phase. The resulting polycrystalline material was characterized by X-ray diffractometry, electron microscopy and impedance spectroscopy. We mechanically processed the annealed diffusion couple and obtained the thin-plate electrolyte consisting mostly of the grain-aligned NTGO polycrystal. The ionic conductivity (σ) of the electrolyte along the common b-axis direction steadily increased from 1.3×10{sup −4} to 7.3×10{sup −3} S/cm as the temperature increased from 573 to 1073 K. There was a slope change at ca. 792 K for the Arrhenius plot of σ; the activation energies were 0.39 eV above this temperature and 0.57 eV below it. The NTGO showed the crystal structure (space group C2/m) with substantial positional disordering of one of the two Ga sites. The Na{sup +} ions occupied ca. 43% of the Wyckoff position 4i site, the deficiency of which would contribute to the relatively high ionic conductivity along the b-axis. The reactive diffusion could be widely applicable as the novel technique to the preparation of grain-aligned ceramics of multi-component systems. - Graphical abstract: We have prepared the b-axis-oriented Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} polycrystal embedded in Ga{sub 2}O{sub 3}-doped Na{sub 2}Ti{sub 4}O{sub 9} matrix by the heat treatment of sandwich-type diffusion couple of Ga{sub 2}TiO{sub 5}/NaGaO{sub 2}/Ga{sub 2}TiO{sub 5}. The resulting Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} electrolyte showed the ionic conductivity ranging from 1.3×10{sup −4} S/cm at 573 K to 7.3×10{sup −3} S/cm at 1073 K. - Highlights: • The b

  19. Measuring the electronic structure of atomically uniform silver films grown on silicon using angle-resolved photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Speer, Nathan James

    Electronic structures derived from Valence electrons in thin films and at surfaces are often much different from those of their bulk counter parts. When the film thickness is less than the electron-coherence length, the boundary conditions at the surface and interface can give rise to standing-wave-like quantum-well states. Electrons in these states are often described as particles in a box. Confinement in the perpendicular direction gives rise to a quantized band structure along the same direction, where the energy spacing is determined by the film thickness. Changing the film by a single atomic layer can cause properties derived from the band structure to vary like ˜ 1/N , where N is the number of monolayers. Recent advances in thin film techniques have made it possible to fabricate films with atomically uniform thickness. Because the electronic structure is a function of film thickness, such techniques are crucial to efforts for a comprehensive understanding of thin films. In this thesis, the electronic properties of atomically uniform Ag films grown on Si(111) substrates are studied using angle-resolved photoemission spectroscopy (ARPES). Using molecular beam epitaxy (MBE) deposition at low temperatures, we are able to fabricate atomically uniform, ultra-thin Ag films on Si substrates for the first time, and the electronic structures are measured using ARPES. The electrons in these uniform film systems have very long coherence lengths and occupy standing-wave-like quantum-well states that propagate through the film and, surprisingly, can reach deep into the substrate despite a lattice mismatched, incommensurate interface. This interaction with the substrate is so strong that it can produce an electronic interference pattern in the photoemission spectra. As the film thickness increases, the electronic structure evolves to form the bulk band continuum plus separates surfaces states. A careful analysis of this evolution allows us to separate surface from bulk

  20. Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE

    NASA Astrophysics Data System (ADS)

    Skibitzki, Oliver; Prieto, Ivan; Kozak, Roksolana; Capellini, Giovanni; Zaumseil, Peter; Arroyo Rojas Dasilva, Yadira; Rossell, Marta D.; Erni, Rolf; von Känel, Hans; Schroeder, Thomas

    2017-03-01

    We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO2-mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

  1. Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE.

    PubMed

    Skibitzki, Oliver; Prieto, Ivan; Kozak, Roksolana; Capellini, Giovanni; Zaumseil, Peter; Arroyo Rojas Dasilva, Yadira; Rossell, Marta D; Erni, Rolf; von Känel, Hans; Schroeder, Thomas

    2017-03-01

    We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO2-mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

  2. Structural and Magnetotransport Study of SrTiO3-δ/Si Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Currie, Alex; Cottier, Ryan; Villarreal, Oscar; Cantu, Jesus; Ponce, Arturo; Theodoropoulou, Nikoleta; Texas State University, San Marcos Collaboration; University of Texas, San Antonio Collaboration

    2014-03-01

    SrTiO3 (STO) films were grown on p-Si (001) substrates using molecular beam epitaxy (MBE). Oxygen vacancies were introduced by controlling the Oxygen resulting in SrTiO3-δ with δ ~ 0.02% for the lowest pressure. The single phase STO/Si films were of high crystalline quality as verified by x-ray diffraction, transmission electron microscopy, and had an rms roughness of less than 0.5nm measured by atomic force microscopy. Transport measurements were performed on the STO/Si structures in a Van der Pauw configuration. We measured resistance as a function of temperature, T = 3K-300K and as a function of an applied magnetic field , H =0 to +/- 9T. The resistivity decreased from 1 Ohm cm to 3x10-2 Ohm cm as the film thickness increased (3nm-60nm) for all temperatures. The magnetoresistance (MR) shows a reproducible trend for all films, the MR is positive at 300K, becomes negative between 200K and 100K and at low temperatures T =3-20K the MR is positive at low H =0 to +/- 2T but at high fields, it starts decreasing again. The MR behavior combined with the Hall effect data indicates the presence of localized electrons that delocalize with H and T. This research was supported by NSF Carrer Award DMR-1255629.

  3. Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

    SciTech Connect

    Dialynas, G. E.; Kalliakos, S.; Xenogianni, C.; Androulidaki, M.; Kehagias, T.; Komninou, P.; Savvidis, P. G.; Pelekanos, N. T.; Hatzopoulos, Z.

    2010-11-15

    The structural and optical properties of piezoelectric (211)B InAs nanostructures grown by molecular beam epitaxy are systematically investigated as a function of the various growth parameters. Depending on the specific growth conditions, we show that the InAs nanostructures take the form of a quantum dot (QD) or a quantum dash, their height ranges between 2 and 20 nm, and their density varies from a few times 10{sup 8} cm{sup -2} all the way up to a few times 10{sup 10} cm{sup -2}. The (211)B QDs are characterized by large aspect ratios, which are compatible with a truncated pyramid morphology. By analyzing the QD emission spectrum, we conclude that only small size QDs, with heights less than 3 nm, are optically active. This is consistent with high resolution transmission electron microscopy observations showing that large QDs contain misfit dislocations, whereas small QDs are dislocation-free. The formation of a two-dimensional wetting layer is observed optically, and its thickness is determined to be between 0.30 and 0.39 nm. Finally, the large blueshift in the QD emission observed with increasing excitation power represents a clear evidence of the strong built-in piezoelectric field present in these dots.

  4. Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Surender, S.; Pradeep, S.; Ramesh, R.; Baskar, K.

    2016-05-01

    In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3 nm for a scan area of 5×5 µm2 which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×1017cm-3 and resistivity of 1.7 Ωcm at room temperature.

  5. Structural, morphological, and optoelectrical characterization of Bi2S3 thin films grown by co-evaporation

    NASA Astrophysics Data System (ADS)

    Mesa, F.; Arredondo, C. A.; Vallejo, W.

    2016-03-01

    This work presents the results of synthesis and characterization of polycrystalline n-type Bi2S3 thin films. The films were grown through a chemical reaction from co-evaporation of their precursor elements in a soda-lime glass substrate. The effect of the experimental conditions on the optical, morphological structural properties, the growth rate, and the electrical conductivity (σ) was studied through spectral transmittance, X-ray diffraction (XRD), atomic force microscopy (AFM) and σ versus T measurements, respectively. The results showed that the films grow only in the orthorhombic Bi2S3 bismuthinite phase. It was also found that the Bi2S3 films present an energy band gap (Eg) of about 1.38 eV. In addition to these results, the electrical conductivity of the Bi2S3 films was affected by both the transport of free carriers in extended states of the conduction band and for variable range hopping transport mechanisms, each one predominating in a different temperature range.

  6. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    SciTech Connect

    Sokolov, N. S. Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V.; Maksimova, K. Yu.; Grunin, A. I.; Tabuchi, M.

    2016-01-14

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  7. Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

    SciTech Connect

    Maryński, A.; Sĕk, G.; Musiał, A.; Andrzejewski, J.; Misiewicz, J.; Gilfert, C.; Reithmaier, J. P.; Capua, A.; Karni, O.; Gready, D.; Eisenstein, G.; Atiya, G.; Kaplan, W. D.; Kölling, S.

    2013-09-07

    The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-like objects grown by molecular beam epitaxy have been investigated. These nanostructures were found to have significantly more symmetrical shapes compared to the commonly obtained dash-like geometries typical of this material system. The enhanced symmetry has been achieved due to the use of an As{sub 2} source and the consequent shorter migration length of the indium atoms. Structural studies based on a combination of scanning transmission electron microscopy (STEM) and atom probe tomography (APT) provided detailed information on both the structure and composition distribution within an individual nanostructure. However, it was not possible to determine the lateral aspect ratio from STEM or APT. To verify the in-plane geometry, electronic structure calculations, including the energy levels and transition oscillator strength for the QDs have been performed using an eight-band k·p model and realistic system parameters. The results of calculations were compared to measured polarization-resolved photoluminescence data. On the basis of measured degree of linear polarization of the surface emission, the in-plane shape of the QDs has been assessed proving a substantial increase in lateral symmetry. This results in quantum-dot rather than quantum-dash like properties, consistent with expectations based on the growth conditions and the structural data.

  8. Optical, electrical, and X-ray-structural studies on Verneuil-grown SrTiO 3 single crystal: Annealing study

    NASA Astrophysics Data System (ADS)

    Mochizuki, S.; Fujishiro, F.; Shibata, K.; Ogi, A.; Konya, T.; Inaba, K.

    2007-12-01

    In order to clarify crystal defect effects on the physical phenomena observed for a SrTiO 3 single crystal grown by Verneuil method, the optical density and photoluminescence spectra, complex impedance spectra, and crystal structure were fully studied for the as-grown crystal boule. The as-grown crystal boule consists of a shell (which is colorless transparent and electrically good insulator) and a core (which is dark blue and has a high electrical conductivity (>10 -3 Ω -1cm -1), and a colossal static dielectric constant (>10 6) at room temperature). The as-grown single crystal was then annealed at 973 K in an Ar-H 2 gas stream. With the progressing of annealing, the as-grown single crystal becomes colorless-transparent insulator and the static dielectric constant decreases down to approximately 300 at room temperature. The X-ray crystallographic studies indicate that the crystallinity is almost independent of the annealing, while the dielectric property is considerably affected by the annealing. A model on the basis of a (Ti 3+-oxygen vacancy) complex defect is proposed for explaining the observed properties of SrTiO 3.

  9. Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

    NASA Astrophysics Data System (ADS)

    Martínez, F. L.; Toledano-Luque, M.; Gandía, J. J.; Cárabe, J.; Bohne, W.; Röhrich, J.; Strub, E.; Mártil, I.

    2007-09-01

    Thin films of hafnium oxide (HfO2) have been grown by high pressure reactive sputtering on transparent quartz substrates (UV-grade silica) and silicon wafers. Deposition conditions were adjusted to obtain polycrystalline as well as amorphous films. Optical properties of the films deposited on the silica substrates were investigated by transmittance and reflectance spectroscopy in the ultraviolet, visible and near infrared range. A numerical analysis method that takes into account the different surface roughness of the polycrystalline and amorphous films was applied to calculate the optical constants (refractive index and absorption coefficient). Amorphous films were found to have a higher refractive index and a lower transparency than polycrystalline films. This is attributed to a higher density of the amorphous samples, which was confirmed by atomic density measurements performed by heavy-ion elastic recoil detection analysis. The absorption coefficient gave an excellent fit to the Tauc law (indirect gap), which allowed a band gap value of 5.54 eV to be obtained. The structure of the films (amorphous or polycrystalline) was found to have no significant influence on the nature of the band gap. The Tauc plots also give information about the structure of the films, because the slope of the plot (the Tauc parameter) is related to the degree of order in the bond network. The amorphous samples had a larger value of the Tauc parameter, i.e. more order than the polycrystalline samples. This is indicative of a uniform bond network with percolation of the bond chains, in contrast to the randomly oriented polycrystalline grains separated by grain boundaries.

  10. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

    PubMed Central

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-01-01

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

  11. The Application of Iii-V Semiconductor Heterojunction Structures Grown by Molecular Beam Epitaxy to Microwave Devices

    NASA Astrophysics Data System (ADS)

    Schaff, William Joseph

    Semiconductor devices capable of higher speeds and higher frequency operation have been a subject of great interest for many years. New fabrication techniques have provided the tools for pushing conventional device performance to new limits. These new techniques have also made possible entirely new clases of devices such as inverted High Electron Mobility Transistors and AlGaAs buffered GaAs MESFETs. The production of such state of the art devices invariably leads to a discovery of materials and process limitations that need to be eliminated. The requirement for achieving changes in composition in semiconductor materials within a single atomic layer is central to the above devices as well as many proposed devices. Molecular Beam Epitaxy has already produced materials with atomic monolayer abruptness in some structures. There are however, some desirable structures that have not been successfully produced by this technique. The fundamental problem is that good quality AlGaAs/GaAs interfaces for GaAs on AlGaAs have not been obtained when the thickness of the AlGaAs is comparable to that needed for inverted High Electron Mobility Transistors or AlGaAs buffered power Field Effect Transistors. It has been found that impurity contamination of GaAs grown on top of AlGaAs can be a severe problem. The purpose of this work is to understand the difficulties which occur and demonstrate the successful application of some techniques which minimize, or eliminate, some of the limitations on current and anticipated device performance. The concept of impurity gettering by an interface and a form of strained layer superlattice effected lattice matching are explored for GaAs and AlGaAs structures. A GaAs MESFET has been fabricated on a superlattice buffer for the first time. It has superior performance to devices with simpler structures. The improved material properties obtained by substitution of a superlattice buffer for the homogeneous GaAs buffer are measured, as a final test, by

  12. Shifts in microbial community structure and function in light- and dark-grown biofilms driven by warming.

    PubMed

    Romaní, Anna M; Borrego, Carles M; Díaz-Villanueva, Verónica; Freixa, Anna; Gich, Frederic; Ylla, Irene

    2014-08-01

    Biofilms are dynamic players in biogeochemical cycling in running waters and are subjected to environmental stressors like those provoked by climate change. We investigated whether a 2°C increase in flowing water would affect prokaryotic community composition and heterotrophic metabolic activities of biofilms grown under light or dark conditions. Neither light nor temperature treatments were relevant for selecting a specific bacterial community at initial phases (7-day-old biofilms), but both variables affected the composition and function of mature biofilms (28-day-old). In dark-grown biofilms, changes in the prokaryotic community composition due to warming were mainly related to rotifer grazing, but no significant changes were observed in functional fingerprints. In light-grown biofilms, warming also affected protozoan densities, but its effect on prokaryotic density and composition was less evident. In contrast, heterotrophic metabolic activities in light-grown biofilms under warming showed a decrease in the functional diversity towards a specialized use of several carbohydrates. Results suggest that prokaryotes are functionally redundant in dark biofilms but functionally plastic in light biofilms. The more complex and self-serving light-grown biofilm determines a more buffered response to temperature than dark-grown biofilms. Despite the moderate increase in temperature of only 2°C, warming conditions drive significant changes in freshwater biofilms, which responded by finely tuning a complex network of interactions among microbial populations within the biofilm matrix.

  13. Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001)

    NASA Astrophysics Data System (ADS)

    Sano, S.; Hasegawa, S.; Mitsuno, Y.; Higashi, K.; Ishimaru, M.; Sakurai, T.; Ohta, H.; Asahi, H.

    2013-09-01

    The growth parameter dependence of structural, electrical and magnetic properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitaxy has been investigated. The structural and magnetic properties of Gd-doped GaN films grown on GaN templates strongly depend on the MBE growth condition. While Gd-doped GaN grown under relatively high Ga fluxes consist of wurtzite GaGdN layers without Gd-related precipitates, Gd-incorporated GaN films grown under low Ga fluxes contain a lot of nanoparticles ranging from several nm to several tens nm in size. The samples with Gd-related nanoparticles exhibit hysteresis in the magnetization-magnetic field curves at 10 K. The separation between the field-cooled and zero-field-cooled magnetization-temperature curves is observed at around 30 K. This behavior is understood in terms of super-paramagnetism originating from the ferromagnetic nanoparticles observed in the cross-sectional transmission electron microscopy images.

  14. Fabrication of GaN Microporous Structure at a GaN/Sapphire Interface as the Template for Thick-Film GaN Separation Grown by HVPE

    NASA Astrophysics Data System (ADS)

    Chen, Jianli; Cheng, Hongjuan; Zhang, Song; Lan, Feifei; Qi, Chengjun; Xu, Yongkuan; Wang, Zaien; Li, Jing; Lai, Zhanping

    2016-10-01

    In this paper, a microporous structure at the GaN/sapphire interface has been obtained by an electrochemical etching method via a selective etching progress using an as-grown GaN/sapphire wafer grown by metal organic chemical vapor deposition. The as-prepared GaN interfacial microporous structure has been used as a template for the following growth of thick-film GaN crystal by hydride vapor phase epitaxy (HVPE), facilitating the fabrication of a free-standing GaN substrate detached from a sapphire substrate. The evolution of the interfacial microporous structure has been investigated by varying the etching voltages and time, and the formation mechanism of interfacial microporous structure has been discussed in detail as well. Appropriate interfacial microporous structure is beneficial for separating the thick GaN crystal grown by HVPE from sapphire during the cooling down process. The separation that occurred at the place of interfacial microporous can be attributed to the large thermal strain between GaN and sapphire. This work realized the fabrication of a free-standing GaN substrate with high crystal quality and nearly no residual strain.

  15. Structural and magnetic properties of epitaxial L2{sub 1}-structured Co{sub 2}(Cr,Fe)Al films grown on GaAs(001) substrates

    SciTech Connect

    Hirohata, A.; Kurebayashi, H.; Okamura, S.; Kikuchi, M.; Masaki, T.; Nozaki, T.; Tezuka, N.; Inomata, K.

    2005-05-15

    We have successfully grown both L2{sub 1} polycrystalline Co{sub 2}CrAl and epitaxial L2{sub 1}-structured Co{sub 2}FeAl films onto GaAs(001) substrates under an optimized condition. Both structural and magnetic analyses reveal the detailed growth mechanism of the alloys, and suggest that the Co{sub 2}CrAl film contains atomically disordered phases, which decreases the magnetic moment per f.u., while the Co{sub 2}FeAl film satisfies the generalized Slater-Pauling behavior. By using these films, magnetic tunnel junctions (MTJs) have been fabricated, showing 2% tunnel magnetoresistance (TMR) for the Co{sub 2}CrAl MTJ at 5 K and 9% for the Co{sub 2}FeAl MTJ at room temperature (RT). Even though the TMR ratio still needs to be improved for future device applications, these results explicitly include that the Co{sub 2}(Cr,Fe)Al full Heusler alloy is a promising compound to achieve half-metallicity at RT by controlling both disorder and surface structures in the atomic level by manipulating the Fe concentration.

  16. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE PAGES

    Limbach, F.; Gotschke, T.; Stoica, T.; ...

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  17. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  18. Characterization of structural defects in MLEK grown InP single crystals using synchrotron white beam X-ray topography

    NASA Astrophysics Data System (ADS)

    Chung, H.; Si, W.; Dudley, M.; Anselmo, A.; Bliss, D. F.; Maniatty, A.; Zhang, H.; Prasad, V.

    1997-04-01

    Structural defects in MLEK grown InP single crystals have been studied using synchrotron white beam X-ray topography. Results here are presented for both a S-doped boule which was wafered longitudinally (i.e., parallel to the growth axis) and an Fe-doped boule which was wafered laterally (i.e., perpendicular to the growth axis). For longitudinal wafers from the S-doped boule, slip bands were observed to have nucleated from high-stress concentration located at the peripheral regions of the boule and to have propagated into the interior of the samples. In the same crystals, the growth interface morphology at different stages of crystal growth was determined. The interface is revealed as contours of equal lattice parameter, visible via strain contrast, as the concentration of the dopant changed periodically during growth. The interface shape was observed to be slightly convex to the melt, once the growth conditions were stabilized. For the laterally sliced wafers from the Fe-doped boule, systematic studies revealed that the density of dislocations changed during growth. A high density of uniformly distributed dislocations were observed in wafers taken from the early and later stages of growth. On the other hand, dislocations in well-defined four-fold symmetric distributions were observed in wafers sliced from the intermediate growth stages. The origins of this four-fold distribution were investigated using a thermal stress model which consisted of imposing a compressive radial stress, uniformly distributed around the boule circumference. The calculated stress distributions also showed four-fold symmetry in agreement with the observed dislocation distributions.

  19. Structural and optical properties of InGaN-GaN nanowire heterostructures grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Höfling, S.; Worschech, L.; Grützmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  20. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  1. Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

    SciTech Connect

    Szymański, Tomasz Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina

    2015-07-15

    GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

  2. Structural characterization of niobium oxide thin films grown on SrTiO3 (111) and (La,Sr)(Al,Ta)O3 (111) substrates

    NASA Astrophysics Data System (ADS)

    Dhamdhere, Ajit R.; Hadamek, Tobias; Posadas, Agham B.; Demkov, Alexander A.; Smith, David J.

    2016-12-01

    Niobium oxide thin films have been grown by molecular beam epitaxy on SrTiO3 (STO) (111) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT) (111) substrates. Transmission electron microscopy (TEM) confirmed the formation of high quality films with coherent interfaces. Films grown with higher oxygen pressure on STO (111) resulted in a (110)-oriented NbO2 phase with a distorted rutile structure, which can be described as body-centered tetragonal. The a lattice parameter of NbO2 was determined to be ˜13.8 Å in good agreement with neutron diffraction results published in the literature. Films grown on LSAT (111) at lower oxygen pressure produced the NbO phase with a defective rock salt cubic structure. The NbO lattice parameter was determined to be a ≈ 4.26 Å. The film phase/structure identification from TEM was in good agreement with in situ x-ray photoelectron spectroscopy measurements that confirmed the dioxide and monoxide phases, respectively. The atomic structure of the NbO2/STO and NbO/LSAT interfaces was determined based on comparisons between high-resolution electron micrographs and image simulations.

  3. Structural Characterization and Antimicrobial Activity of a Biosurfactant Obtained From Bacillus pumilus DSVP18 Grown on Potato Peels

    PubMed Central

    Sharma, Deepak; Ansari, Mohammad Javed; Gupta, Sonam; Al Ghamdi, Ahmad; Pruthi, Parul; Pruthi, Vikas

    2015-01-01

    Background: Biosurfactants constitute a structurally diverse group of surface-active compounds derived from microorganisms. They are widely used industrially in various industrial applications such as pharmaceutical and environmental sectors. Major limiting factor in biosurfactant production is their production cost. Objectives: The aim of this study was to investigate biosurfactant production under laboratory conditions with potato peels as the sole source of carbon source. Materials and Methods: A biosurfactant-producing bacterial strain (Bacillus pumilus DSVP18, NCBI GenBank accession no. GQ865643) was isolated from motor oil contaminated soil samples. Biochemical characteristics of the purified biosurfactant were determined and its chemical structure was analyzed. Stability studies were performed and biological activity of the biosurfactant was also evaluated. Results: The strain, when grown on modified minimal salt media supplemented with 2% potato peels as the sole carbon source, showed the ability to reduce Surface Tension (ST) value of the medium from 72 to 28.7 mN/m. The isolated biosurfactant (3.2 ± 0.32 g/L) was stable over a wide range of temperatures (20 - 120 ºC), pH (2-12) and salt concentrations (2 - 12%). When characterized using high-performance liquid chromatography (HPLC) and Fourier transform infrared spectroscopy, it was found to be a lipopeptide in nature, which was further confirmed by Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (mass peak 1044.60) and nuclear magnetic resonance (NMR) studies. Data showed that the isolated biosurfactant at the concentration range of 30 - 35 µg/ml had strong antimicrobial activity when tested against standard strains of Bacillus cereus, Escherichia coli, Salmonella enteritidis, Staphylococcus aureus and Paenibacillus larvae. Conclusions: Potato peels were proved to be potentially useful substrates for biosurfactant production by B. pumilus DSVP18. The strain possessed a

  4. Cathodoluminescence study of radiative interface defects in thermally grown SiO{sub 2}/4H-SiC(0001) structures

    SciTech Connect

    Fukushima, Yuta; Chanthaphan, Atthawut; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2015-06-29

    Radiative defects in thermally grown SiO{sub 2}/4H-SiC(0001) structures and their location in depth were investigated by means of cathodoluminescence spectroscopy. It was found that while luminescence peaks ascribed to oxygen vacancy and nonbridging oxygen hole centers were observed both from thermal oxides grown on (0001) Si-face and C-face surfaces as with thermal oxides on Si, intense yellow luminescence at a wavelength of around 600 nm was identified only from the oxide interface on the Si-face substrate regardless of the oxide thickness and dopant type. Possible physical origins of the radiative centers localized near an oxide interface of a few nm thick are discussed on the basis of visible light emission from Si backbone structures.

  5. Structure and morphology characters of GaN grown by ECR-MBE using hydrogen-nitrogen mixed gas plasma[Electron Cyclotron Resonance-Molecular Beam Epitaxy

    SciTech Connect

    Araki, Tsutomu; Chiba, Yasuo; Nanishi, Yasushi

    2000-07-01

    GaN growth by electron-cyclotron-resonance plasma-excited molecular beam epitaxy using hydrogen-nitrogen mixed gas plasma were carried out on GaN templates with a different polar-surface. Structure and surface morphology of the GaN layers were characterized using transmission electron microscopy. The GaN layer grown with hydrogen on N-polar template showed a relatively flat morphology including hillocks. Columnar domain existed in the center of the hillock, which might be attributed to the existence of tiny inversion domain with Ga-polarity. On the other hand, columnar structure was formed in the GaN layer grown with hydrogen on Ga-polar template.

  6. TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

    NASA Astrophysics Data System (ADS)

    Mynbaeva, M. G.; Kremleva, A. V.; Kirilenko, D. A.; Sitnikova, A. A.; Pechnikov, A. I.; Mynbaev, K. D.; Nikolaev, V. I.; Bougrov, V. E.; Lipsanen, H.; Romanov, A. E.

    2016-07-01

    A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.

  7. ELECTROABSORPTION OF UNSTRAINED InGaAs/InAlGaAs MULTIPLE QUANTUM WELL STRUCTURE GROWN ON GaAs SUBSTRATES

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Nee, Tzer-En

    Large electroabsorption was observed in InGaAs/InAlGaAs multiple quantum well structures grown on GaAs substrates operating near 1.3 μm. The molecular beam epitaxy (MBE) growth of these structures was incorporation of a carefully designed InAlAs multistage strain-relaxed buffer. The optical absorption spectra as a function of the reverse bias at room temperature are shown. The good characteristics of the optical modulators fabricated on this structure have indicated its potential for practical applications of high-speed modulation.

  8. Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio

    SciTech Connect

    Park, K. W.; Park, C. Y.; Lee, Y. T.

    2012-07-30

    Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment.

  9. Structure and sublimation of water ice films grown in vacuo at 120-190 K studied by positron and positronium annihilation.

    PubMed

    Townrow, S; Coleman, P G

    2014-03-26

    The crystalline structure of ∼ 5-20 μm water ice films grown at 165 and 172 K has been probed by measuring the fraction of positrons forming ortho-positronium (ortho-Ps) and decaying into three gamma photons. It has been established that films grown at slower rates (water vapour pressure ≥ 1 mPa) have lower concentrations of lattice defects and closed pores, which act as Ps traps, than those grown at higher rates (vapour pressure ∼ 100 mPa), evidenced by ortho-Ps diffusion lengths being approximately four times greater in the former. By varying the growth temperature between 162 and 182 K it was found that films become less disordered at temperatures above ∼ 172 K, with the ortho-Ps diffusion length rising by ∼ 60%, in this range. The sublimation energy for water ice films grown on copper has been measured to be 0.462(5) eV using the time dependence of positron annihilation parameters from 165 to 195 K, in agreement with earlier studies and with no measurable dependence on growth rate and thermal history.

  10. Structural properties and metallic conductivity of Ti1-x Nb x O2 films grown by atomic layer deposition on crystalline substrates

    NASA Astrophysics Data System (ADS)

    Luka, Grzegorz; Wachnicki, Lukasz; Jakiela, Rafal; Lusakowska, Elzbieta

    2015-12-01

    Niobium-doped titanium dioxide (Ti1-x Nb x O2, x  ≈  0.04, TNO) films were grown by atomic layer deposition (ALD) at a low growth temperature (220 °C) on LaAlO3(1 0 0) (LAO) and Al2O3(0 0 0 1) (c-sapphire) substrates. The films were without any post-deposition annealing. The films grown on both kinds of substrates have anatase structure. However, the films grown on LAO substrates have (0 0 1) predominant orientation compared to a higher content of (1 1 2) orientation in the films grown on sapphire. TNO/LAO films showed low resistivities (~10-3 Ω cm at room temperature) and a metallic-type electrical conductivity as opposed to higher resistivities (~10-2 Ω cm) and a thermally activated conductivity of TNO/sapphire layers. ALD growth mechanisms of TNO films on crystalline substrates were described.

  11. Origins of Ripples in CVD-Grown Few-layered MoS2 Structures under Applied Strain at Atomic Scales

    PubMed Central

    Wang, Jin; Namburu, Raju R.; Dubey, Madan; Dongare, Avinash M.

    2017-01-01

    The potential of the applicability of two-dimensional molybdenum disulfide (MoS2) structures, in various electronics, optoelectronics, and flexible devices requires a fundamental understanding of the effects of strain on the electronic, magnetic and optical properties. Particularly important is the recent capability to grow large flakes of few-layered structures using chemical vapor deposition (CVD) wherein the top layers are relatively smaller in size than the bottom layers, resulting in the presence of edges/steps across adjacent layers. This paper investigates the strain response of such suspended few-layered structures at the atomic scales using classic molecular dynamics (MD) simulations. MD simulations suggest that the suspended CVD-grown structures are able to relax the applied in-plane strain through the nucleation of ripples under both tensile and compressive loading conditions. The presence of terraced edges in these structures is the cause for the nucleation of ripples at the edges that grow towards the center of the structure under applied in-plane strains. The peak amplitudes of ripples observed are in excellent agreement with the experimental observations. The study provides critical insights into the mechanisms of strain relaxation of suspended few-layered MoS2 structures that determine the interplay between the mechanical response and the electronic properties of CVD-grown structures. PMID:28102351

  12. Origins of Ripples in CVD-Grown Few-layered MoS2 Structures under Applied Strain at Atomic Scales

    NASA Astrophysics Data System (ADS)

    Wang, Jin; Namburu, Raju R.; Dubey, Madan; Dongare, Avinash M.

    2017-01-01

    The potential of the applicability of two-dimensional molybdenum disulfide (MoS2) structures, in various electronics, optoelectronics, and flexible devices requires a fundamental understanding of the effects of strain on the electronic, magnetic and optical properties. Particularly important is the recent capability to grow large flakes of few-layered structures using chemical vapor deposition (CVD) wherein the top layers are relatively smaller in size than the bottom layers, resulting in the presence of edges/steps across adjacent layers. This paper investigates the strain response of such suspended few-layered structures at the atomic scales using classic molecular dynamics (MD) simulations. MD simulations suggest that the suspended CVD-grown structures are able to relax the applied in-plane strain through the nucleation of ripples under both tensile and compressive loading conditions. The presence of terraced edges in these structures is the cause for the nucleation of ripples at the edges that grow towards the center of the structure under applied in-plane strains. The peak amplitudes of ripples observed are in excellent agreement with the experimental observations. The study provides critical insights into the mechanisms of strain relaxation of suspended few-layered MoS2 structures that determine the interplay between the mechanical response and the electronic properties of CVD-grown structures.

  13. Effects of annealing on the polymorphic structure of starches from sweet potatoes (Ayamurasaki and Sunnyred cultivars) grown at various soil temperatures.

    PubMed

    Genkina, Natalia K; Wasserman, Lyubov A; Noda, Takahiro; Tester, Richard F; Yuryev, Vladimir P

    2004-04-28

    Starches extracted from the sweet potato cultivars Sunnyred and Ayamurasaki grown at 15 or 33 degrees C (soil temperature) were annealed in excess water (3 mg starch/mL water) for different times (1, 4, 8 or 10h) at the temperatures 2-3 degrees K below the onset melting temperature. The structures of annealed starches, as well as their gelatinisation (melting) properties, were studied using high-sensitivity differential scanning calorimetry (HSDSC). In excess water, the single endothermic peak shifted to higher temperatures, while the melting (gelatinisation) enthalpy changed only very slightly, if any. The elevation of gelatinisation temperature was associated with increasing order/thickness of the crystalline lamellae. The only DSC endotherm identified in 0.6 M KCl for Sunnyred starch grown at 33 degrees C was attributed to A-type polymorphic structure. The multiple endothermic forms observed by DSC performed in 0.6M KCl for annealed starches from both cultivars grown at 15 degrees C provided evidence of a complex C-type (A- plus B-type) polymorphic structure of crystalline lamellae. The A:B-ratio of two polymorphic forms increased upon annealing due to partial transformation of B- to A-polymorph, which was time dependent. Long heating periods facilitated the maximal transformation of B- to A-polymorph associated with limited A:B ratio.

  14. Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

    NASA Astrophysics Data System (ADS)

    Yazdanfar, M.; Ivanov, I. G.; Pedersen, H.; Kordina, O.; Janzén, E.

    2013-06-01

    By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon carbide (SiC), 100 μm thick epitaxial layers with excellent morphology were grown on 4° off-axis SiC substrates at growth rates exceeding 100 μm/h. In order to reduce the formation of step bunching and structural defects, mainly triangular defects, the effect of varying parameters such as growth temperature, C/Si ratio, Cl/Si ratio, Si/H2 ratio, and in situ pre-growth surface etching time are studied. It was found that an in-situ pre growth etch at growth temperature and pressure using 0.6% HCl in hydrogen for 12 min reduced the structural defects by etching preferentially on surface damages of the substrate surface. By then applying a slightly lower growth temperature of 1575 °C, a C/Si ratio of 0.8, and a Cl/Si ratio of 5, 100 μm thick, step-bunch free epitaxial layer with a minimum triangular defect density and excellent morphology could be grown, thus enabling SiC power device structures to be grown on 4° off axis SiC substrates.

  15. Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

    NASA Astrophysics Data System (ADS)

    Domagala, J. Z.; Smalc-Koziorowska, J.; Iwinska, M.; Sochacki, T.; Amilusik, M.; Lucznik, B.; Fijalkowski, M.; Kamler, G.; Grzegory, I.; Kucharski, R.; Zajac, M.; Bockowski, M.

    2016-12-01

    Study on the sources of stress in HVPE-GaN layer crystallized on 1-in. ammonothermally grown GaN seed is presented in this paper. Characterization by means of X-ray diffraction and transmission electron microscopy is performed. HVPE-GaN samples of high quality and those with visible quality deterioration are investigated on c-plane and m-plane cross-sections. Special attention is paid to HVPE material growing in semi-polar and non-polar directions on the edges of the seed and the growing layer. It is shown that this material generates significant stress leading to a structural deterioration of HVPE-GaN growing in the c-direction.

  16. Stability and structure of nanowires grown from silver, copper and their alloys by laser ablation into superfluid helium.

    PubMed

    Gordon, Eugene; Karabulin, Alexander; Matyushenko, Vladimir; Sizov, Vyacheslav; Khodos, Igor

    2014-12-14

    Nanowires with 5 nm diameter made of silver, copper, and their alloys were grown in superfluid helium. The silver nanowires being heated to 300 K disintegrated into individual clusters. In contrast, copper nanowires were stable at room temperature, and nanowires made of alloys were also stable despite their low melting temperature.

  17. Characterization of dislocation structures and deformation mechanisms in as-grown and deformed directionally solidified NiAl–Mo composites

    DOE PAGES

    Kwon, J.; Bowers, M. L.; Brandes, M. C.; ...

    2015-02-26

    In this paper, directionally solidified (DS) NiAl–Mo eutectic composites were strained to plastic strain values ranging from 0% to 12% to investigate the origin of the previously observed stochastic versus deterministic mechanical behaviors of Mo-alloy micropillars in terms of the development of dislocation structures at different pre-strain levels. The DS composites consist of long, [1 0 0] single-crystal Mo-alloy fibers with approximately square cross-sections embedded in a [1 0 0] single-crystal NiAl matrix. Scanning transmission electron microscopy (STEM) and computational stress state analysis were conducted for the current study. STEM of the as-grown samples (without pre-straining) reveal no dislocations inmore » the investigated Mo-alloy fibers. In the NiAl matrix, on the other hand, a(1 0 0)-type dislocations exist in two orthogonal orientations: along the [1 0 0] Mo fiber axis, and wrapped around the fiber axis. They presumably form to accommodate the different thermal contractions of the two phases during cool down after eutectic solidification. At intermediate pre-strain levels (4–8%), a/2(1 1 1)-type dislocations are present in the Mo-alloy fibers and the pre-existing dislocations in the NiAl matrix seem to be swept toward the interphase boundary. Some of the dislocations in the Mo-alloy fibers appear to be transformed from a(1 0 0)-type dislocations present in the NiAl matrix. Subsequently, the transformed dislocations in the fibers propagate through the NiAl matrix as a(1 1 1) dislocations and aid in initiating additional slip bands in adjacent fibers. Thereafter, co-deformation presumably occurs by (1 1 1) slip in both phases. With a further increase in the pre-strain level (>10%), multiple a/2(1 1 1)-type dislocations are observed in many locations in the Mo-alloy fibers. Interactions between these systems upon subsequent deformation could lead to stable junctions and persistent dislocation sources. Finally, the transition from stochastic to

  18. Interface-structure of the Si/SiC heterojunction grown on 6H-SiC

    SciTech Connect

    Li, L. B.; Chen, Z. M.; Zang, Y.

    2015-01-07

    The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850 ∼ 1050 °C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode, which releases most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900 °C, and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1–11)[1-1-2]{sub Si}//(0001)[-2110]{sub 6H-SiC}. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000 °C, the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]{sub Si}//(0001)[2-1-10]{sub 6H-SiC}. Along Si[110] orientation, the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001], the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si film and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487 × 10{sup 14 }cm{sup −2} and 1.217 × 10{sup 14 }cm{sup −2}, respectively, which is much smaller than the theoretical calculation results.

  19. Characterization of dislocation structures and deformation mechanisms in as-grown and deformed directionally solidified NiAl–Mo composites

    SciTech Connect

    Kwon, J.; Bowers, M. L.; Brandes, M. C.; McCreary, V.; Robertson, Ian M.; Phani, P. Sudaharshan; Bei, H.; Gao, Y. F.; Pharr, George M.; George, Easo P.; Mills, M. J.

    2015-02-26

    In this paper, directionally solidified (DS) NiAl–Mo eutectic composites were strained to plastic strain values ranging from 0% to 12% to investigate the origin of the previously observed stochastic versus deterministic mechanical behaviors of Mo-alloy micropillars in terms of the development of dislocation structures at different pre-strain levels. The DS composites consist of long, [1 0 0] single-crystal Mo-alloy fibers with approximately square cross-sections embedded in a [1 0 0] single-crystal NiAl matrix. Scanning transmission electron microscopy (STEM) and computational stress state analysis were conducted for the current study. STEM of the as-grown samples (without pre-straining) reveal no dislocations in the investigated Mo-alloy fibers. In the NiAl matrix, on the other hand, a(1 0 0)-type dislocations exist in two orthogonal orientations: along the [1 0 0] Mo fiber axis, and wrapped around the fiber axis. They presumably form to accommodate the different thermal contractions of the two phases during cool down after eutectic solidification. At intermediate pre-strain levels (4–8%), a/2(1 1 1)-type dislocations are present in the Mo-alloy fibers and the pre-existing dislocations in the NiAl matrix seem to be swept toward the interphase boundary. Some of the dislocations in the Mo-alloy fibers appear to be transformed from a(1 0 0)-type dislocations present in the NiAl matrix. Subsequently, the transformed dislocations in the fibers propagate through the NiAl matrix as a(1 1 1) dislocations and aid in initiating additional slip bands in adjacent fibers. Thereafter, co-deformation presumably occurs by (1 1 1) slip in both phases. With a further increase in the pre-strain level (>10%), multiple a/2(1 1 1)-type dislocations are observed in many locations in the Mo-alloy fibers. Interactions between these systems upon subsequent deformation could lead to stable junctions and persistent dislocation sources. Finally, the transition from stochastic to

  20. Peculiarities of photoluminescence of vertical n +/ n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors

    NASA Astrophysics Data System (ADS)

    Čerškus, Aurimas; Kundrotas, Jurgis; Sužiedėlis, Algirdas; Gradauskas, Jonas; Ašmontas, Steponas; Johannessen, Eric; Johannessen, Agne

    2015-09-01

    Vertical MBE- and MOCVD-grown structures used for microwave electronics have been studied with continuous wave and time-correlated single photon counting dynamic photoluminescence technique. The photoluminescence spectra and light emission lifetimes are used to explain the recombination mechanisms of the excited carriers. This paper presents results showing the differences in recombination characteristics of layers grown using MBE process compared with MOCVD process. One of these differences is that the PL spectrum of the MOCVD-grown layer is shifted towards the forbidden energy gap region, as well as the characteristic recombination time is longer than for the MBE-grown sample. This peculiarity can be attributed to the formation of the localised band tails in the MOCVD-grown sample. The proposed analytical model explains the differences in microwave detection properties of the samples grown by MBE and MOCVD processes.

  1. Impact of low temperature annealing on structural, optical, electrical and morphological properties of ZnO thin films grown by RF sputtering for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Purohit, Anuradha; Chander, S.; Sharma, Anshu; Nehra, S. P.; Dhaka, M. S.

    2015-11-01

    This paper presents effect of low temperature annealing on the physical properties of ZnO thin films for photovoltaic applications. The thin films of thickness 50 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing radio frequency magnetron sputtering technique followed by thermal annealing within low temperature range 150-450 °C. These as-grown and annealed films were subjected to the X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) for structural, optical, electrical and surface morphological analysis respectively. The compositional analysis of the as-grown ZnO film was also carried out using energy dispersive spectroscopy (EDS). The XRD patterns reveal that the films have wurtzite structure of hexagonal phase with preferred orientation (1 0 0) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in detail. The optical band gap was found in the range 3.30-3.52 eV and observed to decrease with annealing temperature except 150 °C. The current-voltage characteristics show that the films exhibit approximately ohmic behavior. The SEM studies show that the films are uniform, homogeneous and free from crystal defects and voids. The experimental results reveal that ZnO thin films may be used as alternative materials for eco-friendly buffer layer to the thin film solar cell applications.

  2. Effects of Precursor Concentration on Structural and Optical Properties of ZnO Thin Films Grown on Muscovite Mica Substrates by Sol-Gel Spin-Coating.

    PubMed

    Kim, Younggyu; Leem, Jae-Young

    2016-05-01

    The structural and optical properties of the ZnO thin films grown on mica substrates for different precursor concentrations were investigated. The surface morphologies of all the samples indicated that they consisted of granular structures with spherical nano-sized crystallites. The thickness of the ZnO thin films increased significantly and the optical band gap exhibited a blue shift with an increase in the precursor concentration. It is remarkable that the highest I(NBE)/I(DLE) ratio was observed for the ZnO thin film with 0.8 M precursor concentration, even though cracks formed on the surface of this film.

  3. Structural, optical, thermal, mechanical and dielectrical characterizations of γ-glycine crystals grown in strontium chloride solution

    NASA Astrophysics Data System (ADS)

    Helina, B.; Selvarajan, P.; Rose, A. S. J. Lucia

    2012-05-01

    γ-glycine (GG) was synthesized from α-glycine in an aqueous solution of strontium chloride. A solubility study of the synthesized GG sample was conducted at various temperatures ranging from 30 to 55 °C. The saturated solution of GG was prepared using solubility data, and single crystals of GG were grown over a period of three weeks by the slow evaporation method at room temperature. The grown GG crystals were characterized by single-crystal x-ray diffraction analysis, UV-visible transmittance studies, thermogravimetric/differential thermal analysis studies, dielectric studies and Fourier transform infrared studies. The mechanical behavior of the crystals was assessed by Vickers microhardness measurements. The second-harmonic generation efficiency of the sample was measured using a Nd:YAG laser and the value was observed to be larger than that of potassium dihydrogen orthophosphate (KDP).

  4. Structural and electrical characterization of Bi₂Se₃ nanostructures grown by metal-organic chemical vapor deposition.

    PubMed

    Alegria, L D; Schroer, M D; Chatterjee, A; Poirier, G R; Pretko, M; Patel, S K; Petta, J R

    2012-09-12

    We characterize nanostructures of Bi(2)Se(3) that are grown via metal-organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 μm long or thin micrometer-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mΩ·cm. We observe weak antilocalization and extract a phase coherence length l(ϕ) = 178 nm and spin-orbit length l(so) = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.

  5. Improved structural quality of AlN grown on sapphire by 3D/2D alternation growth

    NASA Astrophysics Data System (ADS)

    Guo, Yanmin; Fang, Yulong; Yin, Jiayun; Zhang, Zhirong; Wang, Bo; Li, Jia; Lu, Weili; Feng, Zhihong

    2017-04-01

    Three dimensional (3D) and two dimensional (2D) alternation growth was used to grow AlN epitaxial layers on sapphire substrates. AlN samples grown using this technique have higher crystalline quality and lower dislocation density than samples grown using only 3D or 2D growth modes as witnessed by the high-resolution X-ray diffraction. Smooth atomic terraces with root mean square roughness of 0.107 nm were observed using atomic force microscopy (AFM) when the 3D and 2D AlN were 75 nm and 425 nm, respectively. This sample possesses single crystallographic orientation along the c-axis identified by Raman spectroscopy. Furthermore, the 3D/2D alternating growth mode modulates internal stress in AlN epitaxial layer by adjusting 2D AlN thickness, and the mechanism was studied in detail.

  6. Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

    NASA Astrophysics Data System (ADS)

    Suvar, E.; Haralson, E.; Radamson, H. H.; Wang, Y.-B.; Grahn, J. V.; Malm, B. G.; Östling, M.

    2004-03-01

    Sources of base-collector and base-emitter leakage current in a SiGeC-based heterojunction bipolar transistor (HBT) with a selectively grown and chemical-mechanical polished (CMP) collector are discussed. Transmission electron microscopy and electrical measurement have been applied to investigate the leakage current. It has been demonstrated that the edge-located defects generated by selective epitaxy process are the origin of the junction leakage.

  7. Study of structural defects and crystalline perfection of near stoichiometric LiNbO3 crystals grown from flux and prepared by VTE technique

    NASA Astrophysics Data System (ADS)

    Bhatt, R.; Bhaumik, Indranil; Ganesamoorthy, S.; Karnal, A. K.; Gupta, P. K.; Swami, M. K.; Patel, H. S.; Sinha, A. K.; Upadhyay, A.

    2014-10-01

    Near-stoichiometric LiNbO3 (SLN) single crystals were grown/prepared by top seeded solution growth/vapor transport equilibration (VTE) technique, and investigated for stoichiometry, disorder and structural defects. The optical absorption and Raman line-width studies revealed higher stoichiometry (i.e., higher Li/Nb) for SLN prepared by vapor transport equilibration (SLN_V) technique in comparison to SLN grown from K2O flux (SLN_K) and Li-rich melt (SLN_L). The nearly symmetric single diffraction curve (DC), though broad, as observed for SLN_L specimen in high resolution X-rays diffraction (HRXRD) analysis depicted lesser low angle grain boundaries. On the other hand, relatively sharp DC with lowest full-width at half-maximum (FWHM ∼45 arc-sec) in HRXRD and lesser Urbach energy (∼80 meV) in the absorption spectra for SLN_V crystal revealed less structural defects with respect to other SLN crystals. The higher FWHM of DCs in HRXRD for SLN_L and SLN_K is attributed to growth related imperfections usually observed in solution growth. Though, VTE process results in SLN crystals with better stoichiometry and lesser structural defects but the limitation being that samples up to ∼1 mm thickness can be prepared with this technique. For bulk SLN, growth from K2O flux resulted in better stoichiometry whereas Li-rich flux resulted in better structural quality. The absorption spectra of the grown SLN crystals depicted oxygen vacancy induced electronic defects (Nb4+, polarons), which was further authenticated by X-ray absorption near-edge structure (XANES) analysis at Nb K edge revealing lesser Nb4+ defects in SLN with respect to congruent lithium niobate (CLN) crystal.

  8. Bound-solvent structures for microgravity-, ground control-, gel- and microbatch-grown hen egg-white lysozyme crystals at 1.8 A resolution.

    PubMed

    Dong, J; Boggon, T J; Chayen, N E; Raftery, J; Bi, R C; Helliwell, J R

    1999-04-01

    A number of methods can be used to improve the stability of the protein crystal-growth environment, including growth in microgravity without an air-liquid phase boundary, growth in gels and growth under oil ('microbatch'). In this study, X-ray data has been collected from and structures refined for crystals of hen egg-white lysozyme (HEWL) grown using four different methods, liquid-liquid dialysis on Earth and in microgravity using the European Space Agency's (ESA) Advanced Protein Crystallization Facility (APCF) on board the NASA Space Shuttle Life and Microgravity Spacelab (LMS) mission (STS-78), crystallization in agarose gel using a tube liquid-gel diffusion method and crystallization in microbatch under oil. A comparison of the overall quality of the X-ray data, the protein structures and especially the bound-water structures has been carried out at 1.8 A. The lysozyme protein structures corresponding to these four different crystallization methods remain similar. A small improvement in the bound-solvent structure is seen in lysozyme crystals grown in microgravity by liquid-liquid dialysis, which has a more stable fluid physics state in microgravity, and is consistent with a better formed protein crystal in microgravity.

  9. Investigation of deep-level defects in InGaAsN/GaAs 3xQWs structures grown by AP-MOVPE

    NASA Astrophysics Data System (ADS)

    Gelczuk, Ł.; Dabrowska-Szata, M.; Kamyczek, P.; Płaczek-Popko, E.; Kopalko, K.; Ściana, B.; Pucicki, D.; Radziewicz, D.; Tłaczała, M.

    2013-07-01

    We have investigated deep-level defects in InGaAsN/GaAs 3xQW structures by means of conventional as well as high-resolution deep level transient spectroscopy (DLTS). The three samples were grown by atmospheric pressure metalorganic vapour phase epitaxy (AP-MOVPE) in different growth temperatures (566°C, 575°C and 585°C). The DLTS measurements revealed four electron traps E1 (0.17-0.24 eV), E2 (0.36-0.38 eV), E3 (0.46-0.49 eV) and E4 (0.81-0.84 eV) and one hole trap H1(0.8 eV) in our structures. The electron trap E1 was associated with N-related complexes while the other electron traps with native defects, usually observed in GaAs-based structures EL6, EL3 and EL2, respectively. Finally, the trap E2 and H1, observed in the structure grown at lowest temperature, were associated with the same trap, which can act as both an electron and hole trap. It was thus concluded that E2/H1 may be a generation-recombination center.

  10. Structure and defects of a linear chain polymer film; GeO phthalocyanine epitaxially grown on KC1

    NASA Astrophysics Data System (ADS)

    Kobayashi, Takashi; Uyeda, Natsu

    1987-10-01

    Epitaxial film of GeO phthalocyanine polymer grown on KC1 has been investigated by direct observation of molecular images and electron diffraction. The film is composed of many crystallites oriented in two directions. The mechanism of the epitaxial growth of an organic crystal has been related to the determination of a staggering angle of the molecules stacked in polymer chains. Prominent diffuse scatterings have been observed and their origin has been revealed to be the existence of stacking faults in the crystal. The molecular orientation at the fault is discussed.

  11. Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Tadjer, Marko J.; Mastro, Michael A.; Mahadik, Nadeemullah A.; Currie, Marc; Wheeler, Virginia D.; Freitas, Jaime A.; Greenlee, Jordan D.; Hite, Jennifer K.; Hobart, Karl D.; Eddy, Charles R.; Kub, Fritz J.

    2016-04-01

    Epitaxial growth of monoclinic β-Ga2O3 on a-plane and c-plane sapphire substrates by metalorganic vapor-phase epitaxy (MOVPE) is reported. Crystalline phase, growth rate (˜150 nm/h), and energy gap (˜4.7 eV) were determined by x-ray diffraction and optical reflectance measurements. Film density of ˜5.6 g/cm3 measured by x-ray reflectivity suggests the presence of vacancies, and the O-rich growth regime implies the presence of Ga vacancies in the films. O/Ga ratio of 1.13, as measured by XPS for Ga2O3 grown on c-plane Al2O3, suggests that, near the surface, the film is O-deficient. Atomic force microscopy revealed smoother, smaller grain size when films were grown on c-plane Al2O3. Raman spectroscopy suggested inclusions of α-Ga2O3, likely present at the sapphire interface due to growth on nonnative substrate. Samples of β-Ga2O3 were selectively implanted with Si in the source/drain regions and subsequently annealed at 1000°C for 10 min. Normally-off transistors (V T ≅ 4.7 V) with 20-nm-thick Al2O3 gate oxide were fabricated, and a maximum drain-source current of 4.8 nA was measured.

  12. A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

    NASA Technical Reports Server (NTRS)

    Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

    1980-01-01

    Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

  13. Optical, structural, and transport properties of indium nitride, indium gallium nitride alloys grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Khan, Neelam

    InGaN based, blue and green light emitting diodes (LEDs) have been successfully produced over the past decade. But the progress of these LEDs is often limited by the fundamental problems of InGaN such as differences in lattice constants, thermal expansion coefficients and physical properties between InN and GaN. This difficulty could be addressed by studying pure InN and InxGa 1-xN alloys. In this context Ga-rich InxGa1-xN (x ≤ 0.4) epilayers were grown by metal organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) measurements showed InxGa1-xN films with x= 0.37 had single phase. Phase separation occurred for x ˜ 0.4. To understand the issue of phase separation in Ga-rich InxGa 1-xN, studies on growth of pure InN and In-rich InxGa 1-xN alloys were carried out. InN and In-rich InxGa1-xN (x ˜ 0.97-0.40) epilayers were grown on AlN/Al2O3 templates. A Hall mobility of 1400 cm2/Vs with a carrier concentration of 7x1018cm -3 was observed for InN epilayers grown on AlN templates. Photoluminescence (PL) emission spectra revealed a band to band emission peak at ˜0.75 eV for InN. This peak shifted to 1.15 eV when In content was varied from 1.0 to 0.63 in In-rich InxGa1-xN epilayers. After growth parameter optimization of In-rich InxGa1-xN alloys with (x = 0.97-0.40) were successfully grown without phase separation. Effects of Mg doping on the PL properties of InN epilayers grown on GaN/Al 2O3 templates were investigated. An emission line at ˜ 0.76 eV, which was absent in undoped InN epilayers and was about 60 meV below the band edge emission peak at ˜ 0.82 eV, was observed to be the dominant emission in Mg-doped InN epilayers. PL peak position and the temperature dependent emission intensity corroborated each other and suggested that Mg acceptor level in InN is about 60 meV above the valance band maximum. Strain effects on the emission properties of InGaN/GaN multiple quantum wells (MQWs) were studied using a single blue LED wafer possessing a continuous

  14. InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organized nano-masks

    NASA Astrophysics Data System (ADS)

    Xing, K.; Gong, Y.; Bai, J.; Wang, T.

    2011-10-01

    Great improvement in crystal quality of a-plane (non-polar) GaN has been achieved using a simple but effective overgrowth technique based on self-organized nano-masks. This has been confirmed by a massive reduction in full width at half maximum of x-ray diffraction rocking curves measured along both symmetrical and asymmetrical directions. Taking the advantage of utilising the nano-masks, a quick coalescence with a thickness of less than 1 μm has been obtained, which is much less than that using any conventional overgrowth techniques. The dislocation density has been significantly reduced by more than one order magnitude compared with a standard a-plane GaN layer on sapphire. An InGaN/GaN multiple quantum well (MQW) structure grown on the high quality a-plane GaN has demonstrated an enhancement with a factor of 7 in optical efficiency, compared with a similar MQW structure grown on a standard c-plane GaN layer. The excitation-power dependent photoluminescence measurements have confirmed that the a-plane InGaN/GaN MQW structure does not suffer from quantum-confined Stark effect any more.

  15. Structural properties of Bi2Te3 topological insulator thin films grown by molecular beam epitaxy on (111) BaF2 substrates

    NASA Astrophysics Data System (ADS)

    Fornari, Celso I.; Rappl, Paulo H. O.; Morelhão, Sérgio L.; Abramof, Eduardo

    2016-04-01

    Structural properties of topological insulator bismuth telluride films grown epitaxially on (111) BaF2 with a fixed Bi2Te3 beam flux were systematically investigated as a function of substrate temperature and additional Te flux. A layer-by-layer growth mode is observed since the early stages of epitaxy and remains throughout the whole deposition. Composition of the epitaxial films produced here stays between Bi2Te3 and Bi4Te5, as determined from the comparison of the measured x-ray diffraction curves with calculations. The substrate temperature region, where the growth rate remains constant, is found to be the most appropriate to obtain ordered Bi2Te3 films. Line width of the L = 18 Bi2Te3 diffraction peaks as low as 140 arcsec was obtained, indicating high crystalline quality. Twinning domains density rises with increasing growth temperature and reducing Te extra flux. X-ray reflectivity curves of pure Bi2Te3 films with thickness from 165 to 8 nm exhibited well defined interference fringes, evidencing homogeneous layers with smooth surface. Our results demonstrate that Bi2Te3 films with very well controlled structural parameters can be obtained. High structural quality Bi2Te3 films as thin as only eight quintuple layers grown here are promising candidates for intrinsic topological insulator.

  16. InGaAsP/InAlAs type I/type II multiple quantum well structures grown by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kawamura, Yuichi; Iwamura, Hidetoshi

    1995-05-01

    In 1- xGa xAs 1- yP y/In 0.52Al 0.48As multiple quantum well (MQW) structures have been grown on InP substrates by gas source molecular beam epitaxy and the compositional dependence of the optical properties are studied by photoluminescence and optical absorption measurements. It is found that the type I/type II transition occurs at a P composition of 0.60. From the compositional dependence of the effective bandgap of the InGaAsP/InAlAs MQW structure, the valence band discontinuity ( ΔEv) of the InP/InAlAs hetero-interface is estimated to be 0.20 eV, which is consistent with the result for the conduction band discontinuity ( ΔEc) of In 1- w-zGa wAl zAs/InP MQW structures.

  17. Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns

    NASA Astrophysics Data System (ADS)

    Oto, Takao; Mizuno, Yutaro; Yanagihara, Ai; Miyagawa, Rin; Kano, Tatsuya; Yoshida, Jun; Sakakibara, Naoki; Kishino, Katsumi

    2016-11-01

    The influence of GaN column diameter DGaN on structural properties was systematically investigated for InGaN nanocolumns (NCs) grown on top of GaN NCs. We demonstrated a large critical layer thickness of above 400 nm for In0.3Ga0.7N/GaN NCs. The structural properties were changed at the boundary of DGaN=D0 (˜120 nm). Homogeneous InGaN NCs grew axially on the GaN NCs with DGaN≤D0, while InGaN-InGaN core-shell structures were spontaneously formed on the GaN NCs with DGaN>D0. These results can be explained by a growth system that minimizes the total strain energy of the NCs.

  18. Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPA-MOCVD

    NASA Astrophysics Data System (ADS)

    Indika, S. M. K.; Seidlitz, Daniel; Fali, Alireza; Cross, Brendan; Abate, Yohannes; Dietz, Nikolaus

    2016-09-01

    This contribution presents results on the structural and optoelectronic properties of InN layers grown on AlN/sapphire (0001) templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical Vapor Deposition (MEPAMOCVD). The AlN nucleation layer (NL) was varied to assess the physical properties of the InN layers. For ex-situ analysis of the deposited structures, Raman spectroscopy, Atomic Force Microscopy (AFM), and Fourier Transform Infrared (FTIR) reflectance spectroscopy have been utilized. The structural and optoelectronic properties are assessed by Raman-E2 high FWHM values, surface roughness, free carrier concentrations, mobility of the free carriers, and high frequency dielectric function. This study focus on optimizing the AlN nucleation layer (e.g. temporal precursor exposure, nitrogen plasma exposure, plasma power and AlN buffer growth temperature) and its effect on the InN layer properties.

  19. Effect of Arbuscular Mycorrhizal Fungi on Plant Biomass and the Rhizosphere Microbial Community Structure of Mesquite Grown in Acidic Lead/Zinc Mine Tailings

    PubMed Central

    Solís-Domínguez, Fernando A.; Valentín-Vargas, Alexis; Chorover, Jon; Maier, Raina M.

    2011-01-01

    Mine tailings in arid and semi-arid environments are barren of vegetation and subject to eolian dispersion and water erosion. Revegetation is a cost-effective strategy to reduce erosion processes and has wide public acceptance. A major cost of revegetation is the addition of amendments, such as compost, to allow plant establishment. In this paper we explore whether arbuscular mycorrhizal fungi (AMF) can help support plant growth in tailings at a reduced compost concentration. A greenhouse experiment was performed to determine the effects of three AMF inocula on biomass, shoot accumulation of heavy metals, and changes in the rhizosphere microbial community structure of the native plant Prosopis juliflora (mesquite). Plants were grown in an acidic lead/zinc mine tailings amended with 10% (w/w) compost amendment, which is slightly sub-optimal for plant growth in these tailings. After two months, AMF-inoculated plants showed increased dry biomass and root length (p < 0.05) and effective AMF colonization compared to controls grown in uninoculated compost-amended tailings. Mesquite shoot tissue lead and zinc concentrations did not exceed domestic animal toxicity limits regardless of whether AMF inoculation was used. The rhizosphere microbial community structure was assessed using denaturing gradient gel electrophoresis (DGGE) profiles of the small subunit RNA gene for bacteria and fungi. Canonical correspondence analysis (CCA) of DGGE profiles showed that the rhizosphere fungal community structure at the end of the experiment was significantly different from the community structure in the tailings, compost, and AMF inocula prior to planting. Further, CCA showed that AMF inoculation significantly influenced the development of both the fungal and bacterial rhizosphere community structures after two months. The changes observed in the rhizosphere microbial community structure may be either a direct effect of the AMF inocula, caused by changes in plant physiology induced by

  20. Effect of arbuscular mycorrhizal fungi on plant biomass and the rhizosphere microbial community structure of mesquite grown in acidic lead/zinc mine tailings.

    PubMed

    Solís-Domínguez, Fernando A; Valentín-Vargas, Alexis; Chorover, Jon; Maier, Raina M

    2011-02-15

    Mine tailings in arid and semi-arid environments are barren of vegetation and subject to eolian dispersion and water erosion. Revegetation is a cost-effective strategy to reduce erosion processes and has wide public acceptance. A major cost of revegetation is the addition of amendments, such as compost, to allow plant establishment. In this paper we explore whether arbuscular mycorrhizal fungi (AMF) can help support plant growth in tailings at a reduced compost concentration. A greenhouse experiment was performed to determine the effects of three AMF inocula on biomass, shoot accumulation of heavy metals, and changes in the rhizosphere microbial community structure of the native plant Prosopis juliflora (mesquite). Plants were grown in an acidic lead/zinc mine tailings amended with 10% (w/w) compost amendment, which is slightly sub-optimal for plant growth in these tailings. After two months, AMF-inoculated plants showed increased dry biomass and root length (p<0.05) and effective AMF colonization compared to controls grown in uninoculated compost-amended tailings. Mesquite shoot tissue lead and zinc concentrations did not exceed domestic animal toxicity limits regardless of whether AMF inoculation was used. The rhizosphere microbial community structure was assessed using denaturing gradient gel electrophoresis (DGGE) profiles of the small subunit RNA gene for bacteria and fungi. Canonical correspondence analysis (CCA) of DGGE profiles showed that the rhizosphere fungal community structure at the end of the experiment was significantly different from the community structure in the tailings, compost, and AMF inocula prior to planting. Further, CCA showed that AMF inoculation significantly influenced the development of both the fungal and bacterial rhizosphere community structures after two months. The changes observed in the rhizosphere microbial community structure may be either a direct effect of the AMF inocula, caused by changes in plant physiology induced by

  1. Relation between growth rate and structure of graphene grown in a 4″ showerhead chemical vapor deposition reactor.

    PubMed

    Bekdüz, B; Beckmann, Y; Meier, J; Rest, J; Mertin, W; Bacher, G

    2017-04-07

    The chemical vapor deposition (CVD) growth of graphene on copper is controlled by a complex interplay of substrate preparation, substrate temperature, pressure and flow of reactive gases. A large variety of recipes have been suggested in literature, often quite specific to the reactor, which is being used. Here, we report on a relation between growth rate and quality of graphene grown in a scalable 4″ CVD reactor. The growth rate is varied by substrate pre-treatment, chamber pressure, and methane to hydrogen (CH4:H2) ratio, respectively. We found that at lower growth rates graphene grains become hexagonal rather than randomly shaped, which leads to a reduced defect density and a sheet resistance down to 268 Ω/sq.

  2. Interfacial mixing and internal structure of Pt-containing nanocomposites grown by room temperature electron beam induced deposition

    SciTech Connect

    Li Juntao; Dunn, Kathleen A.; Thiel, Bradley L.; Toth, Milos

    2010-05-15

    Material grown by room temperature electron beam induced deposition (EBID) using (CH{sub 3}){sub 3}CH{sub 3}C{sub 5}H{sub 4}Pt precursor consists of platinum nanocrystals embedded in an amorphous matrix. The crystallites are shown to intermix with the amorphous oxide on a Si substrate. The extent of intermixing scales with the electron energy density delivered to the material during growth. Dependencies on electron flux, fluence, and exposure time indicate that the intermixing process is athermal, electron-activated, and rate limited by mass transport inside the solid. Furthermore, the degree of deposit crystallinity is shown to scale with the electron flux and fluence used for EBID. We discuss mechanisms behind the observed changes in nanostructure and implications for the growth of functional materials by EBID.

  3. Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study

    SciTech Connect

    Acharya, Ananta R. E-mail: anantaach@gmail.com; Thoms, Brian D.; Nepal, Neeraj; Eddy, Charles R.

    2015-03-15

    The surface bonding configuration and kinetics of hydrogen desorption from InN grown by plasma-assisted atomic layer epitaxy have been investigated. High resolution electron energy loss spectra exhibited loss peaks assigned to a Fuchs–Kliewer surface phonon, N-N and N-H surface species. The surface N-N vibrations are attributed to surface defects. The observation of N-H but no In-H surface species suggested N-terminated InN. Isothermal desorption data were best fit by the first-order desorption kinetics with an activation energy of (0.88 ± 0.06) eV and pre-exponential factor of (1.5 ± 0.5) × 10{sup 5 }s{sup −1}.

  4. Interfacial mixing and internal structure of Pt-containing nanocomposites grown by room temperature electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Li, Juntao; Toth, Milos; Dunn, Kathleen A.; Thiel, Bradley L.

    2010-05-01

    Material grown by room temperature electron beam induced deposition (EBID) using (CH3)3CH3C5H4Pt precursor consists of platinum nanocrystals embedded in an amorphous matrix. The crystallites are shown to intermix with the amorphous oxide on a Si substrate. The extent of intermixing scales with the electron energy density delivered to the material during growth. Dependencies on electron flux, fluence, and exposure time indicate that the intermixing process is athermal, electron-activated, and rate limited by mass transport inside the solid. Furthermore, the degree of deposit crystallinity is shown to scale with the electron flux and fluence used for EBID. We discuss mechanisms behind the observed changes in nanostructure and implications for the growth of functional materials by EBID.

  5. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

    PubMed Central

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11–22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1–100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  6. Structural and optical properties of the In(x)Ga(1-x)As nanowires grown on SiO2 via vapor-liquid-solid method.

    PubMed

    Shin, Hyun Wook; Shin, Jae Cheol; Kim, Do Yang; Choi, Won Jun; Choe, Jeong-Woo

    2014-08-01

    We report the crystal growth of the In(x)Ga(1-x)As nanowires (NWs) on SiO2 substrate using metal organic chemical vapor deposition. Au nanoparticles which are disintegrated from thin Au film have been used as a catalyst for the vapor-liquid-solid growth. Electron microscopy characterization is performed to investigate the structural properties of the In(x)Ga(1-x)As NW. The In(x)Ga(1-x)As NW grown under an optimal condition has a single-crystal wurtzite structure without any misfit dislocation or stacking fault. Strong room temperature photoluminescence peaks are observed from In(x)Ga(1-x)As NWs passivated by GaAs. Very low light reflectance is measured at the NW surface in the wavelength range from 250 to 1200 nm. The single crystal In(x)Ga(1-x)As NWs are applicable to the various electrical and optical devices.

  7. Structural properties of InN films grown on O-face ZnO(0001) by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Cho, Yong Jin; Brandt, Oliver; Kaganer, Vladimir M.; Ramsteiner, Manfred; Riechert, Henning; Korytov, Maxim; Albrecht, Martin

    2012-04-09

    We study the impact of substrate temperature and layer thickness on the morphological and structural properties of InN films directly grown on O-face ZnO(0001) substrates by plasma-assisted molecular beam epitaxy. With increasing substrate temperature, an interfacial reaction between InN and ZnO takes place that eventually results in the formation of cubic In{sub 2}O{sub 3} and voids. The properties of the InN films, however, are found to be unaffected by this reaction for substrate temperatures less than 550 deg. C. In fact, both the morphological and the structural quality of InN improve with increasing substrate temperature in the range from 350 to 500 deg. C. High quality films with low threading dislocation densities are demonstrated.

  8. Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques

    NASA Astrophysics Data System (ADS)

    David, S.; Roque, J.; Rochat, N.; Bernier, N.; Piot, L.; Alcotte, R.; Cerba, T.; Martin, M.; Moeyaert, J.; Bogumilowizc, Y.; Arnaud, S.; Bertin, F.; Bassani, F.; Baron, T.

    2016-05-01

    Structural and optical properties of InGaAs quantum well fins (QWFs) selectively grown on Si using the aspect ratio trapping (ART) method in 200 nm deep SiO2 trenches are studied. A new method combining cathodoluminescence, transmission electron microscopy, and precession electron diffraction techniques is developed to spatially correlate the presence of defects and/or strain with the light emission properties of a single InGaAs QWF. Luminescence losses and energy shifts observed at the nanoscale along InGaAs QWF are correlated with structural defects. We show that strain distortions measured around threading dislocations delimit both high and low luminescent areas. We also show that trapped dislocations on SiO2 sidewalls can also result in additional distortions. Both behaviors affect optical properties of QWF at the nanoscale. Our study highlights the need to improve the ART growth method to allow integration of new efficient III-V optoelectronic components on Si.

  9. Structural and molecular regulation of lung maturation by intratracheal vascular endothelial growth factor administration in the normally grown and placentally restricted fetus.

    PubMed

    McGillick, Erin V; Orgeig, Sandra; Morrison, Janna L

    2016-03-01

    Inhibition of hypoxia signalling leads to respiratory distress syndrome (RDS), whereas administration of vascular endothelial growth factor (VEGF), the most widely characterized hypoxia responsive factor, protects from RDS. In the lung of the chronically hypoxaemic placentally restricted (PR) fetus, there is altered regulation of hypoxia signalling. This leads to reduced surfactant maturation in late gestation and provides evidence for the increased risk of RDS in growth restricted neonates at birth. We evaluated the effect of recombinant human VEGF administration with respect to bypassing the endogenous regulation of hypoxia signalling in the lung of the normally grown and PR sheep fetus. There was no effect of VEGF administration on fetal blood pressure or fetal breathing movements. We examined the effect on the expression of genes regulating VEGF signalling (FLT1 and KDR), angiogenesis (ANGPT1, AQP1, ADM), alveolarization (MMP2, MMP9, TIMP1, COL1A1, ELN), proliferation (IGF1, IGF2, IGF1R, MKI67, PCNA), inflammation (CCL2, CCL4, IL1B, TNFA, TGFB1, IL10) and surfactant maturation (SFTP-A, SFTP-B, SFTP-C, SFTP-D, PCYT1A, LPCAT, LAMP3, ABCA3). Despite the effects of PR on the expression of genes regulating airway remodelling, inflammatory signalling and surfactant maturation, there were very few effects of VEGF administration on gene expression in the lung of both the normally grown and PR fetus. There were, however, positive effects of VEGF administration on percentage tissue, air space and numerical density of SFTP-B positive alveolar epithelial cells in fetal lung tissue. These results provide evidence for the stimulatory effects of VEGF administration on structural maturation in the lung of both the normally grown and PR fetus.

  10. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    SciTech Connect

    Liu, Zheng; Amani, Matin; Najmaei, Sina; Xu, Quan; Zou, Xiaolong; Zhou, Wu; Yu, Ting; Qiu, Caiyu; Birdwell, A. Glen; Crowne, Frank J.; Vajtai, Robert; Yakobson, Boris I.; Xia, Zhenhai; Dubey, Madan; Ajayan, Pulickel M.; Lou, Jun

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.

  11. Infrared study of the absorption edge of {beta}-InN films grown on GaN/MgO structures

    SciTech Connect

    Perez-Caro, M.; Rodriguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

    2010-07-15

    Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that {beta}-InN films have large free-carrier concentrations present (>10{sup 19} cm{sup -3}), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in {beta}-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

  12. Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy

    SciTech Connect

    Wassner, Thomas A.; Laumer, Bernhard; Maier, Stefan; Stutzmann, Martin; Laufer, Andreas; Meyer, Bruno K.; Eickhoff, Martin

    2009-01-15

    Wurtzite Zn{sub 1-x}Mg{sub x}O thin films with Mg contents between x=0 and x=0.37 were grown on c-plane sapphire substrates by plasma assisted molecular beam epitaxy using a MgO/ZnMgO buffer layer. The a-lattice parameter is independent from the Mg concentration, whereas the c-lattice parameter decreases from 5.20 A for x=0 to 5.17 A for x=0.37, indicating pseudomorphic growth. The near band edge photoluminescence shows a blueshift with increasing Mg concentration to an emission energy of 4.11 eV for x=0.37. Simultaneously, the energetic position of the deep defect luminescence shows a linear shift from 2.2 to 2.8 eV. Low temperature transmission measurements reveal strong excitonic features for the investigated composition range and alloy broadening effects for higher Mg contents. The Stokes shift as well as the Urbach energy is increased to values of up to 125 and 54 meV for x=0.37, respectively, indicating exciton localization due to alloy fluctuations.

  13. Effect of substrate temperature on structural and optical properties of ZnO nanostructures grown by thermal evaporation method

    NASA Astrophysics Data System (ADS)

    Tu, Nguyen; Trung, Do Quang; Kien, N. D. T.; Huy, P. T.; Nguyen, D. H.

    2017-01-01

    In this study, ZnO nanostructures were synthesized on SiO2/Si substrate by thermal evaporation method. The dependence of the crystalline phase, morphologies and chemical composition of the samples grown at different substrate temperatures were systematically studied. The XRD, Raman spectra, FTIR spectra and XPS results reveal the existence of Zn2SiO4 phase, beside the ZnO phase. The Zn2SiO4 phase dominates at high substrate temperature and vise versa. Under UV excitation at room temperature, the samples show three distinct emission bands namely UV ( 380 nm), green ( 525 nm), and NIR (730 nm). The increase of the PL intensity of the NIR emission with increasing substrate temperature, indicates the relation between this emission and the higher Zn2SiO4 phase content in the samples. Origin of the rarely observed NIR emission band is attributed to the energy transition from non-bridging oxygen hole centers of SiO2 to the Zni and Vo states of Zn2SiO4.

  14. Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Huang, Yong; Ryou, Jae-Hyun; Dupuis, Russell D.; Zuo, Daniel; Kesler, Benjamin; Chuang, Shun-Lien; Hu, Hefei; Kim, Kyou-Hyun; Ting Lu, Yen; Hsieh, K. C.; Zuo, Jian-Min

    2011-07-01

    We propose and demonstrate strain-balanced InAs/GaSb type-II superlattices (T2SLs) grown on InAs substrates employing GaAs-like interfacial (IF) layers by metalorganic chemical vapor deposition (MOCVD) for effective strain management, simplified growth scheme, improved materials crystalline quality, and reduced substrate absorption. The in-plane compressive strain from the GaSb layers in the T2SLs on the InAs was completely balanced by the GaAs-like IF layers formed by controlled precursor carry-over and anion exchange effects, avoiding the use of complicated IF layers and precursor switching schemes that were used for the MOCVD growth of T2SLs on GaSb. An infrared (IR) p-i-n photodiode structure with 320-period InAs/GaSb T2SLs on InAs was grown and the fabricated devices show improved performance characteristics with a peak responsivity of ˜1.9 A/W and a detectivity of ˜6.78 × 109 Jones at 8 μm at 78 K. In addition, the InAs buffer layer and substrate show a lower IR absorption coefficient than GaSb substrates in most of the mid- and long-IR spectral range.

  15. Structure, magnetic, and microwave properties of thick Ba-hexaferrite films epitaxially grown on GaN/Al2O3 substrates

    NASA Astrophysics Data System (ADS)

    Chen, Z.; Yang, A.; Mahalingam, K.; Averett, K. L.; Gao, J.; Brown, G. J.; Vittoria, C.; Harris, V. G.

    2010-06-01

    Thick barium hexaferrite [BaOṡ(Fe2O3)6] films, having the magnetoplumbite structure (i.e., Ba M), were epitaxially grown on c-axis oriented GaN/Al2O3 substrates by pulsed laser deposition followed by liquid phase epitaxy. X-ray diffraction showed (0,0,2n) crystallographic alignment with pole figure analyses confirming epitaxial growth. High resolution transmission electron microscopy images revealed magnetoplumbite unit cells stacked with limited interfacial mixing. Saturation magnetization, 4πMs, was measured for as-grown films to be 4.1±0.3 kG with a perpendicular magnetic anisotropy field of 16±0.3 kOe. Ferromagnetic resonance linewidth, the peak-to-peak power absorption derivative at 53 GHz, was 86 Oe. These properties will prove enabling for the integration of low loss Ba M ferrite microwave passive devices with active semiconductor circuit elements in systems-on-a-wafer architecture.

  16. Growth temperature effect on the structural and magnetic properties of Fe{sub 3}O{sub 4} films grown by the self-template method

    SciTech Connect

    Takahashi, R. Misumi, H.; Lippmaa, M.

    2014-07-21

    We have investigated the effect of growth temperature on the structure, surface morphology, and magnetic properties of Fe{sub 3}O{sub 4} thin films grown on SrTiO{sub 3}(001) substrates by a self-template method. To eliminate the intermixing of (001) and (111) orientations that usually occurs in spinel films grown on perovskite substrates, a thin self-template layer of (001)-oriented Fe{sub 3}O{sub 4} was deposited on a SrTiO{sub 3}(001) substrate at 400 °C prior to the main film growth at temperatures of up to 1100 °C. Increasing the growth temperature from 400 °C to 1100 °C resulted in greatly improved crystallinity of the Fe{sub 3}O{sub 4} thin films, with the rocking curve width dropping from 1.41° to 0.28°. Surface analysis by atomic force microscopy showed that raising the growth temperature increased the grain size and the surface roughness, ultimately leading to the formation of regular nanopyramid arrays at 1100 °C. The surface roughening and pyramid formation are caused by the dominance of the lowest surface energy spinel (111) crystal facet. The nanopyramids were fully relaxed but still perfectly (001)-oriented in the out-of-plane direction. The largest pyramids had the lowest coercivity due to a reduction of the demagnetization effect.

  17. Multienergy gold ion implantation for enhancing the field electron emission characteristics of heterogranular structured diamond films grown on Au-coated Si substrates

    NASA Astrophysics Data System (ADS)

    Sankaran, K. J.; Manoharan, D.; Sundaravel, B.; Lin, I. N.

    2016-09-01

    Multienergy Au-ion implantation enhanced the electrical conductivity of heterogranular structured diamond films grown on Au-coated Si substrates to a high level of 5076.0 (Ω cm)-1 and improved the field electron emission (FEE) characteristics of the films to low turn-on field of 1.6 V/μm, high current density of 5.4 mA/cm2 (@ 2.65 V/μm), and high lifetime stability of 1825 min. The catalytic induction of nanographitic phases in the films due to Au-ion implantation and the formation of diamond-to-Si eutectic interface layer due to Au-coating on Si together encouraged the efficient conducting channels for electron transport, thereby improved the FEE characteristics of the films.

  18. Structural properties of free-standing 50 mm diameter GaN waferswith (101_0) orientation grown on LiAlO2

    SciTech Connect

    Jasinski, Jacek; Liliental-Weber, Zuzanna; Maruska, Herbert-Paul; Chai, Bruce H.; Hill, David W.; Chou, Mitch M.C.; Gallagher, John J.; Brown, Stephen

    2005-09-27

    (10{und 1}0) GaN wafers grown on (100) face of {gamma}-LiAlO{sub 2} were studied using transmission electron microscopy. Despite good lattice matching in this heteroepitaxial system, high densities of planar structural defects in the form of stacking faults on the basal plane and networks of boundaries located on prism planes inclined to the layer/substrate interface were present in these GaN layers. In addition, significant numbers of threading dislocations were observed. High-resolution electron microscopy indicates that stacking faults present on the basal plane in these layers are of low-energy intrinsic I1type. This is consistent with diffraction contrast experiments.

  19. The influence of In composition on properties of InxGa1-xAs/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance

    NASA Astrophysics Data System (ADS)

    Bedoui, M.; Habchi, M. M.; Moussa, I.; Rebey, A.

    2017-01-01

    Series of InxGa1-xAs/GaAs structures with indium vapor composition ranging from 13 to 100%, denoted samples A, B, C and D, were grown by metalorganic vapor phase epitaxy (MOVPE) at 450 °C and in situ monitored by spectral reflectance (SR). In order to contribute to the enhancement of crystal quality and to understand growth kinetic of InxGa1-xAs/GaAs structures, the dependence of structural and morphological properties on indium composition x was studied. Basing on high resolution x-ray diffraction (HRXRD) measurements, solid indium compositions x of samples A, B, C and D were determined. Also, the evolution of structural quality (dislocations density, grain size, etc.) as a function of indium composition x was quantified. Besides, morphological properties (hatching and islands formations, densities, sizes and uniformities, RMS surface roughness, etc.) and growth process (growth anisotropy, etc.) versus indium composition x were examined using atomic force microscopy (AFM) analysis. Also, reflectance three-dimensional plot as function of time and wavelength was recorded to quantify the evolution of reflectivity in the wavelength range from 400 to 1000 nm and to determine some growth parameters such as growth rates and thicknesses of InxGa1-xAs samples. A good correlation between experimental results issued from different characterizations tools was obtained.

  20. Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111) A substrates

    NASA Astrophysics Data System (ADS)

    Galiev, G. B.; Klimov, E. A.; Vasiliev, A. L.; Imamov, R. M.; Pushkarev, S. S.; Trunkin, I. N.; Maltsev, P. P.

    2017-01-01

    The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111) A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in "low-temperature" GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100-150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111) A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150-200 nm.

  1. 1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Wu, T. H.; Su, Y. K.; Chuang, R. W.; Huang, C. Y.; Wu, H. J.; Lin, Y. C.

    2013-05-01

    In this article, we have demonstrated 1-eV energy band gap In0.22GaAsNy/GaAs multi-quantum well (MQW) solar cells grown by a metal organic vapor phase epitaxy (MOVPE) system. With nitrogen incorporation, the equivalent band gap energy of quantum well structure will decrease and reach near 1 eV. The structures of In0.22GaAsNy/GaAs MQWs were inserted into an intrinsic absorption layer for absorbing the incident light in the longer wavelength region. From the measurement results, the absorption band edge of In0.22GaAsNy/GaAs MQW solar cells is extended over 1300 nm. On the other hand, in order to improve the device performance pre-deteriorated by nitrogen incorporation, a hybrid structure which consists of In0.22GaAs/GaAs and In0.22GaAsN0.043/GaAs quantum wells is adopted; with this hybrid quantum well structure as the absorption layer, consequently the short circuit current is enhanced from 10.85 to 15.29 mA/cm2.

  2. Magnetic and structural properties of BiFeO3 thin films grown epitaxially on SrTiO3/Si substrates

    NASA Astrophysics Data System (ADS)

    Laughlin, Ryan P.; Currie, Daniel A.; Contreras-Guererro, Rocio; Dedigama, Aruna; Priyantha, Weerasinghe; Droopad, Ravindranath; Theodoropoulou, Nikoleta; Gao, Peng; Pan, Xiaoqing

    2013-05-01

    The integration of oxides with semiconductors is important for the technological advancement of the next generation electronics. Concomitant ferroelectric and antiferromagnetic (AF) behavior is demonstrated in single crystal BiFeO3 (BFO) films grown on 20 nm SrTiO3 (STO) virtual substrates on Si(100) using molecular beam epitaxy (MBE). STO thin films are grown in an oxide MBE chamber by co-deposition of Sr, Ti, and molecular O2. Careful control of the O2 during nucleation produced commensurate growth of STO on Si. The sequence of the steps allows for the suppression of an amorphous SiO2 layer. This STO(20 nm)/Si structure was used as a virtual substrate for MBE deposition of BFO on Si without breaking vacuum. BFO was deposited using Fe and O2 plasma with an overpressure of Bi flux, the growth rate was controlled by the incoming Fe flux. The reflection high energy electron diffraction image shows a 2-D growth front with a 6-fold surface reconstruction under optimized O2 pressure of 5 × 10-8 mbar. Cross-sectional transmission electron microscopy (TEM) confirms the high crystallinity of the films and shows sharp, atomically flat interfaces. The selected area diffraction pattern (SADP) reveals that BFO grows in a distorted rhombohedral crystal structure. X-ray diffraction does not show formation of second phases and is consistent with the TEM and SADP results. The BFO films show AF behavior with a Neel temperature that exceeds 350 K, as expected (TN = 673 K) and with a residual ferromagnetic behavior that decreases with film thickness and is consistent with the G-type AF due to the canted spins. The saturation magnetization per unit volume for a 40 nm thick film was 180 emu/cm3 at an in-plane magnetic field of 8 kOe. The ferroelectric behavior of the films was verified using piezoresponse force microscopy.

  3. Self-assembling iron oxyhydroxide/oxide tubular structures: laboratory-grown and field examples from Rio Tinto

    NASA Astrophysics Data System (ADS)

    Barge, Laura M.; Cardoso, Silvana S. S.; Cartwright, Julyan H. E.; Doloboff, Ivria J.; Flores, Erika; Macías-Sánchez, Elena; Sainz-Díaz, C. Ignacio; Sobrón, Pablo

    2016-11-01

    Rio Tinto in southern Spain has become of increasing astrobiological significance, in particular for its similarity to environments on early Mars. We present evidence of tubular structures from sampled terraces in the stream bed at the source of the river, as well as ancient, now dry, terraces. This is the first reported finding of tubular structures in this particular environment. We propose that some of these structures could be formed through self-assembly via an abiotic mechanism involving templated precipitation around a fluid jet, a similar mechanism to that commonly found in so-called chemical gardens. Laboratory experiments simulating the formation of self-assembling iron oxyhydroxide tubes via chemical garden/chemobrionic processes form similar structures. Fluid-mechanical scaling analysis demonstrates that the proposed mechanism is plausible. Although the formation of tube structures is not itself a biosignature, the iron mineral oxidation gradients across the tube walls in laboratory and field examples may yield information about energy gradients and potentially habitable environments.

  4. Self-assembling iron oxyhydroxide/oxide tubular structures: laboratory-grown and field examples from Rio Tinto.

    PubMed

    Barge, Laura M; Cardoso, Silvana S S; Cartwright, Julyan H E; Doloboff, Ivria J; Flores, Erika; Macías-Sánchez, Elena; Sainz-Díaz, C Ignacio; Sobrón, Pablo

    2016-11-01

    Rio Tinto in southern Spain has become of increasing astrobiological significance, in particular for its similarity to environments on early Mars. We present evidence of tubular structures from sampled terraces in the stream bed at the source of the river, as well as ancient, now dry, terraces. This is the first reported finding of tubular structures in this particular environment. We propose that some of these structures could be formed through self-assembly via an abiotic mechanism involving templated precipitation around a fluid jet, a similar mechanism to that commonly found in so-called chemical gardens. Laboratory experiments simulating the formation of self-assembling iron oxyhydroxide tubes via chemical garden/chemobrionic processes form similar structures. Fluid-mechanical scaling analysis demonstrates that the proposed mechanism is plausible. Although the formation of tube structures is not itself a biosignature, the iron mineral oxidation gradients across the tube walls in laboratory and field examples may yield information about energy gradients and potentially habitable environments.

  5. Design of Electrically Conductive Structural Composites by Modulating Aligned CVD-Grown Carbon Nanotube Length on Glass Fibers.

    PubMed

    He, Delong; Fan, Benhui; Zhao, Hang; Lu, Xiaoxin; Yang, Minhao; Liu, Yu; Bai, Jinbo

    2017-01-25

    Function-integration in glass fiber (GF) reinforced polymer composites is highly desired for developing lightweight structures and devices with improved performance and structural health monitoring. In this study, homogeneously aligned carbon nanotube (CNT) shell was in situ grafted on GF by chemical vapor deposition (CVD). It was demonstrated that the CNT shell thickness and weight fraction can be modulated by controlling the CVD conditions. The obtained hierarchical CNTs-GF/epoxy composites show highly improved electrical conductivity and thermo-mechanical and flexural properties. The composite through-plane and in-plane electrical conductivities increase from a quasi-isolator value to ∼3.5 and 100 S/m, respectively, when the weight fraction of CNTs grafted on GF fabric varies from 0% to 7%, respectively. Meanwhile, the composite storage modulus and flexural modulus and strength improve as high as 12%, 21%, and 26%, respectively, with 100% retention of the glass transition temperature. The reinforcing mechanisms are investigated by analyzing the composite microstructure and the interfacial adhesion and wetting properties of CNTs-GF hybrids. Moreover, the specific damage-related resistance variation characteristics could be employed to in situ monitor the structural health state of the composites. The outstanding electrical and structural properties of the CNTs-GF composites were due to the specific interfacial and interphase structures created by homogeneously grafting aligned CNTs on each GF of the fabric.

  6. Structural, electrical and magnetic measurements on oxide layers grown on 316L exposed to liquid lead-bismuth eutectic

    NASA Astrophysics Data System (ADS)

    Hosemann, Peter; Hofer, Christian; Hlawacek, Gregor; Li, Ning; Maloy, Stuart A.; Teichert, Christian

    2012-02-01

    Fast reactors and spallation neutron sources may use lead-bismuth eutectic (LBE) as a coolant. Its physical, chemical, and irradiation properties make it a safe coolant compared to Na cooled designs. However, LBE is a corrosive medium for most steels and container materials. The present study was performed to evaluate the corrosion behavior of the austenitic steel 316L (in two different delivery states). Detailed atomic force microscopy, magnetic force microscopy, conductive atomic force microscopy, and scanning transmission electron microscopy analyses have been performed on the oxide layers to get a better understanding of the corrosion and oxidation mechanisms of austenitic and ferritic/martensitic stainless steel exposed to LBE. The oxide scale formed on the annealed 316L material consisted of multiple layers with different compositions, structures, and properties. The innermost oxide layer maintained the grain structure of what used to be the bulk steel material and shows two phases, while the outermost oxide layer possessed a columnar grain structure.

  7. Structural differences between capped GaSb nanostructures grown by Stranski-Krastanov and droplet epitaxy growth modes

    NASA Astrophysics Data System (ADS)

    DeJarld, Matt; Yan, Lifan; Luengo-Kovac, Marta; Sih, Vanessa; Millunchick, Joanna

    2017-01-01

    Droplet epitaxy (DE) has emerged as an alternative to Stranski-Krastanov (SK) as a method for epitaxial nanostructure formation. We find significant structural differences of similar sized nanostructures embedded in GaAs between the two methods. Atomic force microscopy and atom probe tomography measurements reveal that uncapped and capped SK structures resemble each other. However, the DE nanostructures appear as rings topographically but are quantum dots compositionally. A GaSb wetting layer is present regardless of the growth method and shares a nearly identical Sb concentration profile. DE nanostructures are shown to have a lower Sb concentration, and transmission electron microscopy measurements reveal that they produce less strain on the capping layer. Despite significant structural differences, SK and DE nanostructures exhibit the same photoluminescence response, suggesting that the emission is from a shared feature such as the wetting layer, rather than the nanostructures.

  8. Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique

    NASA Astrophysics Data System (ADS)

    Yamada, Seiya; Yoshimura, Masafumi; Sakata, Shin-ichi; Taishi, Toshinori; Hoshikawa, Keigo

    2016-08-01

    We investigated the influence of growth rate and Ce concentration on colony structure variation in Al2O3/YAG:Ce eutectic systems. The distance between boundary zones in the colony structure decreased with increases in either growth rate or Ce concentration. The eutectic spacing in the coarse microstructure in the boundary zone decreased with increasing growth rate but increased with increasing Ce concentration. We conclude that the colony structure is formed by cellular growth driven by constitutional supercooling with an interface instability due to Ce atom accumulation, so that the distance between boundary zones depends on both the growth rate and Ce concentration, and the coarse microstructure in the boundary zone depends on the solidification rate perpendicular to the growth interface at the cell bottom of the microscopic growth interface shape in the cellular growth.

  9. Evolution of morphology and structure of Pb thin films grown by pulsed laser deposition at different substrate temperatures

    SciTech Connect

    Lorusso, Antonella Maiolo, Berlinda; Perrone, Alessio; Gontad, Francisco; Maruccio, Giuseppe; Tasco, Vittorianna

    2014-03-15

    Pb thin films were prepared by pulsed laser deposition on a Si (100) substrate at different growth temperatures to investigate their morphology and structure. The morphological analysis of the thin metal films showed the formation of spherical submicrometer grains whose average size decreased with temperature. X-ray diffraction measurements confirmed that growth temperature influences the Pb polycrystalline film structure. A preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C and became increasingly pronounced along the Pb (200) plane as the substrate temperature increased. These thin films could be used to synthesize innovative materials, such as metallic photocathodes, with improved photoemission performances.

  10. Structure of cadmium selen-telluride alloy films grown by the thermal-screen method under highly nonequilibrium conditions

    SciTech Connect

    Belyaev, A. P. Rubets, V. P.; Antipov, V. V.; Toshkhodzhaev, Kh. A.

    2009-06-15

    The results of technological experiments and structural investigations of films of CdSe{sub x}Te{sub 1-x} alloys synthesized by the thermal-screen method on heated and cooled substrates (under highly nonequilibrium conditions) are presented. It is shown that the synthesis of the entire range of compositions of alloy films with the structure from epitaxial to amorphous is possible from the mechanical mixture of CdSe and CdTe powders of the same composition under highly nonequilibrium conditions. The electron diffraction patterns and the microphotographs of film surfaces are reported.

  11. Cellular porous anodic alumina grown in neutral organic electrolyte. 1. Structure, composition, and properties of the films

    SciTech Connect

    Liu, Y.; Alwitt, R.S.; Shimizu, K.

    2000-04-01

    Anodic alumina films with cellular porous structure grow in neutral organic electrolytes with low water content and containing ethylene glycol and a large dicarboxylic acid. An Al carboxylate precipitates in the pore and is extruded from the coating. The porous structure develops even though the current efficiency for film formation is near 95%. The coating matrix contains substantial organic material, 15 wt % by thermal analysis. It is an oxide/organic composite with higher field strength and lower dielectric constant than pure anodic alumina.

  12. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    SciTech Connect

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  13. SEM and Raman spectroscopy analyses of laser-induced periodic surface structures grown by ethanol-assisted femtosecond laser ablation of chromium

    NASA Astrophysics Data System (ADS)

    Bashir, Shazia; Shahid Rafique, M.; Nathala, Chandra S. R.; Ajami, Ali; Husinsky, Wolfgang

    2015-05-01

    The effect of fluence and pulse duration on the growth of nanostructures on chromium (Cr) surfaces has been investigated upon irradiation of femtosecond (fs) laser pulses in a liquid confined environment of ethanol. In order to explore the effect of fluence, targets were exposed to 1000 pulses at various peak fluences ranging from 4.7 to 11.8 J cm-2 for pulse duration of ∼25 fs. In order to explore the effect of pulse duration, targets were exposed to fs laser pulses of various pulse durations ranging from 25 to 100 fs, for a constant fluence of 11.8 J cm-2. Surface morphology and structural transformations have been analyzed by scanning electron microscopy and Raman spectroscopy, respectively. After laser irradiation, disordered sputtered surface with intense melting and cracking is obtained at the central ablated areas, which are augmented with increasing laser fluence due to enhanced thermal effects. At the peripheral ablated areas, where local fluence is approximately in the range of 1.4-4 mJ cm-2, very well-defined laser-induced periodic surface structures (LIPSS) with periodicity ranging from 270 to 370 nm along with dot-like structures are formed. As far as the pulse duration is concerned, a significant effect on the surface modification of Cr has been revealed. In the central ablated areas, for the shortest pulse duration (25 fs), only melting has been observed. However, LIPSS with dot-like structures and droplets have been grown for longer pulse durations. The periodicity of LIPSS increases and density of dot-like structures decreases with increasing pulse duration. The chemical and structural modifications of irradiated Cr have been revealed by Raman spectroscopy. It confirms the formation of new bands of chromium oxides and enol complexes or Cr-carbonyl compounds. The peak intensities of identified bands are dependent upon laser fluence and pulse duration.

  14. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

    PubMed

    Roy, Anupam; Movva, Hema C P; Satpati, Biswarup; Kim, Kyounghwan; Dey, Rik; Rai, Amritesh; Pramanik, Tanmoy; Guchhait, Samaresh; Tutuc, Emanuel; Banerjee, Sanjay K

    2016-03-23

    We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature-dependent electrical measurements show an insulating behavior that agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states.

  15. Broad range tuning of structural and optical properties of Zn x Mg1-x O nanostructures grown by vapor transport method

    NASA Astrophysics Data System (ADS)

    Vanjaria, Jignesh V.; Azhar, Ebraheem Ali; Yu, Hongbin

    2016-11-01

    One-dimensional (1D) Zn x Mg1-x O nanomaterials have drawn global attention due to their remarkable chemical and physical properties, and their diverse current and future technological applications. In this work, 1D ZnMgO nanostructures with different magnesium concentrations and different morphologies were grown directly on zinc oxide-coated silicon substrates by thermal evaporation of zinc oxide, magnesium boride and graphite powders. Highly well-defined Mg-rich ZnMgO nanorods with a rock salt structure and Zn-rich ZnMgO nanostructures with a wurtzite structure have been deposited individually by careful optimization of the source mixture and process parameters. Structural and optical properties of the deposited products were studied by scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, and Raman spectroscopy. Cathodoluminescence measurements demonstrate strong dominant peaks at 3.3 eV in Mg poor ZnMgO nanostructures and 4.8 eV in Mg rich nanostructures implying that the ZnMgO nanostructures can be used for the fabrication of deep UV optoelectronic devices. A mechanism for the formation and achieved diverse morphology of the ZnMgO nanostructures was proposed based on the characterization results.

  16. Structural properties of Bi{sub 2−x}Mn{sub x}Se{sub 3} thin films grown via molecular beam epitaxy

    SciTech Connect

    Babakiray, Sercan; Johnson, Trent A.; Borisov, Pavel; Holcomb, Mikel B.; Lederman, David; Marcus, Matthew A.; Tarafder, Kartick

    2015-07-28

    The effects of Mn doping on the structural properties of the topological insulator Bi{sub 2}Se{sub 3} in thin film form were studied in samples grown via molecular beam epitaxy. Extended x-ray absorption fine structure measurements, supported by density functional theory calculations, indicate that preferential incorporation occurs substitutionally in Bi sites across the entire film volume. This finding is consistent with x-ray diffraction measurements which show that the out of plane lattice constant expands while the in plane lattice constant contracts as the Mn concentration is increased. X-ray photoelectron spectroscopy indicates that the Mn valency is 2+ and that the Mn bonding is similar to that in MnSe. The expansion along the out of plane direction is most likely due to weakening of the Van der Waals interactions between adjacent Se planes. Transport measurements are consistent with this Mn{sup 2+} substitution of Bi sites if additional structural defects induced by this substitution are taken into account.

  17. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

    SciTech Connect

    Hawley, Marilyn E; Biegalski, Michael D; Schlom, Darrell G

    2008-01-01

    Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700{sup o}C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO{sub 3} films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

  18. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    NASA Astrophysics Data System (ADS)

    Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A.; Martínez-Criado, G.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.

    2009-07-01

    By means of x-ray absorption near-edge structure (XANES) several Ga1-xMnxN (0.03grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding \\mathrm {t_{2}}\\uparrow band localized in the gap region, and the corresponding anti-bonding state \\mathrm {t_{2}}\\downarrow , which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  19. Control of Phase, Structural and Optical Properties of Tin Sulfide Nanostructured Thin Films Grown via Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Mahdi, Mohamed S.; Ibrahim, K.; Hmood, Arshad; Ahmed, Naser M.; Mustafa, Falah I.

    2017-02-01

    In this study, nanostructured tin sulfide (SnS) thin films were synthesized on glass substrates by means of low-cost chemical bath deposition using non-toxic trisodium citrate (TSC) as complexing agent. The influence of varying molar concentration of TSC (0.15-0.21 M) on the tin sulfide phases was investigated. The structural, morphological and optical properties of the films were studied using x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption spectroscopy. The XRD patterns confirmed an orthorhombic polycrystalline structure of the as-prepared SnS thin films. The values of average crystalline size and texture coefficient of the major XRD peak increased with increasing TSC concentration. The FESEM micrographs revealed that the synthesized thin films are characterized by a flake-stack structure. The Raman spectra of the films showed the presence of a Sn2S3 peak, which gradually declined in intensity until almost disappearing as the TSC concentration increased from 0.15 M to 0.21 M. The direct energy band gaps estimated from ultraviolet-visible-near-infrared absorption spectra also varied between 1.64 eV to 1.1 eV with increasing TSC concentration from 0.15 M to 0.21 M. The results indicate the crucial role of TSC in the synthesis of SnS nanostructured thin films.

  20. Atomic structure of an ultrathin Fe-silicate film grown on a metal: a monolayer of clay?

    PubMed

    Włodarczyk, Radosław; Sauer, Joachim; Yu, Xin; Boscoboinik, Jorge Anibal; Yang, Bing; Shaikhutdinov, Shamil; Freund, Hans-Joachim

    2013-12-26

    Ultrathin Fe-doped silicate films were prepared on a Ru(0001) surface and, as a function of the Fe/Si ratio, structurally characterized by low-energy electron diffraction, X-ray photoelectron spectroscopy, infrared reflection-absorption spectroscopy, and scanning tunneling microscopy. Density functional theory (DFT) was used to identify the atomic structure. The results show that uniform substitution of Si by Fe in the silicate bilayer frame is thermodynamically unfavorable: the film segregates into a pure silicate and an Fe-silicate phase. The DFT calculations reveal that the Fe-silicate film with an Fe/Si = 1:1 ratio consists of a monolayer of [SiO4] tetrahedra on top of an iron oxide monolayer. As such, it closely resembles the structure of the clay mineral nontronite, a representative of the Fe-rich smectites. Furthermore, the DFT calculations predict formation of bridging Fe-O-Ru bonds between the Fe-silicate film and the Ru substrate accompanied by charge transfer from the metal substrate to the film, so that iron is in the oxidation state +III as in nontronite.

  1. Atomic Structures of Silicene Layers Grown on Ag(111): Scanning Tunneling Microscopy and Noncontact Atomic Force Microscopy Observations

    PubMed Central

    Resta, Andrea; Leoni, Thomas; Barth, Clemens; Ranguis, Alain; Becker, Conrad; Bruhn, Thomas; Vogt, Patrick; Le Lay, Guy

    2013-01-01

    Silicene, the considered equivalent of graphene for silicon, has been recently synthesized on Ag(111) surfaces. Following the tremendous success of graphene, silicene might further widen the horizon of two-dimensional materials with new allotropes artificially created. Due to stronger spin-orbit coupling, lower group symmetry and different chemistry compared to graphene, silicene presents many new interesting features. Here, we focus on very important aspects of silicene layers on Ag(111): First, we present scanning tunneling microscopy (STM) and non-contact Atomic Force Microscopy (nc-AFM) observations of the major structures of single layer and bi-layer silicene in epitaxy with Ag(111). For the (3 × 3) reconstructed first silicene layer nc-AFM represents the same lateral arrangement of silicene atoms as STM and therefore provides a timely experimental confirmation of the current picture of the atomic silicene structure. Furthermore, both nc-AFM and STM give a unifying interpretation of the second layer (√3 × √3)R ± 30° structure. Finally, we give support to the conjectured possible existence of less stable, ~2% stressed, (√7 × √7)R ± 19.1° rotated silicene domains in the first layer. PMID:23928998

  2. Atomic structures of silicene layers grown on Ag(111): scanning tunneling microscopy and noncontact atomic force microscopy observations.

    PubMed

    Resta, Andrea; Leoni, Thomas; Barth, Clemens; Ranguis, Alain; Becker, Conrad; Bruhn, Thomas; Vogt, Patrick; Le Lay, Guy

    2013-01-01

    Silicene, the considered equivalent of graphene for silicon, has been recently synthesized on Ag(111) surfaces. Following the tremendous success of graphene, silicene might further widen the horizon of two-dimensional materials with new allotropes artificially created. Due to stronger spin-orbit coupling, lower group symmetry and different chemistry compared to graphene, silicene presents many new interesting features. Here, we focus on very important aspects of silicene layers on Ag(111): First, we present scanning tunneling microscopy (STM) and non-contact Atomic Force Microscopy (nc-AFM) observations of the major structures of single layer and bi-layer silicene in epitaxy with Ag(111). For the (3 × 3) reconstructed first silicene layer nc-AFM represents the same lateral arrangement of silicene atoms as STM and therefore provides a timely experimental confirmation of the current picture of the atomic silicene structure. Furthermore, both nc-AFM and STM give a unifying interpretation of the second layer (√3 × √3)R ± 30° structure. Finally, we give support to the conjectured possible existence of less stable, ~2% stressed, (√7 × √7)R ± 19.1° rotated silicene domains in the first layer.

  3. Structural differences between light and heavy rare earth element binding chlorophylls in naturally grown fern: Dicranopteris linearis.

    PubMed

    Wei, Zhenggui; Hong, Fashui; Yin, Ming; Li, Huixin; Hu, Feng; Zhao, Guiwen; Wong, Jonathan Woonchung

    2005-09-01

    Chloroplasts and chlorophylls were isolated from the leaves of Dicranopteris linearis, a natural perennial fern sampled at rare earth element (REE) mining areas in the South-Jiangxi region (southern China). The inductively coupled plasma-mass spectrometry (ICP-MS) results indicated that REEs were present in the chloroplasts and chlorophylls of D. linearis. The in vivo coordination environment of light REE (lanthanum) or heavy REE (yttrium) ions in D. linearis chlorophyll-a was determined by the extended X-ray absorption fine structure (EXAFS). Results revealed that there were eight nitrogen atoms in the first coordination shell of the lanthanum atom, whereas there were four nitrogen atoms in the first coordination shell of yttrium. It was postulated that the lanthanum-chlorophyll-a complex might have a double-layer sandwich-like structure, but yttrium-binding chlorophyll-a might be in a single-layer form. Because the content of REE-binding chlorophylls in D. linearis chlorophylls was very low, it is impossible to obtain structural characteristics of REE-binding chlorophylls by direct analysis of the Fourier transform infrared (FTIR) and ultraviolet (UV)-visible spectra of D. linearis chlorophylls. In order to acquire more structural information of REE-binding chlorophyll-a in D. linearis, lanthanum - and yttrium-chlorophyll-a complexes were in vitro synthesized in acetone solution. Element analyses and EXAFS results indicated that REE ions (lanthanum or yttrium) of REE-chlorophyll-a possessed the same coordination environment whether in vivo or in vitro. The FTIR spectra of the REE-chlorophyll-a complexes indicated that REEs were bound to the porphyrin rings of chlorophylls. UV-visible results showed that the intensity ratios of Soret to the Q-band of REE-chlorophyll-a complexes were higher than those of standard chlorophyll-a and pheophytin-a, indicating that REE-chlorophyll-a might have a much stronger ability to absorb the ultraviolet light. The MCD spectrum in

  4. Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects

    NASA Astrophysics Data System (ADS)

    Robins, Lawrence H.; Bertness, Kris A.; Barker, Joy M.; Sanford, Norman A.; Schlager, John B.

    2007-06-01

    GaN nanowires with diameters of 50-250 nm, grown by catalyst-free molecular beam epitaxy, were characterized by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy at temperatures from 3 to 297 K. Both as-grown samples and dispersions of the nanowires onto other substrates were examined. The properties of the near-band-edge PL and CL spectra were discussed in Part I of this study by [Robins et al. [L. H. Robins, K. A. Bertness, J. M. Barker, N. A. Sanford, and J. B. Schlager, J. Appl. Phys. 101,113505 (2007)]. Spectral features below the band gap, and the effect of extended electron irradiation on the CL, are discussed in Part II. The observed sub-band-gap PL and CL peaks are identified as phonon replicas of the free-exciton transitions, or excitons bound to structural defects or surface states. The defect-related peaks in the nanowires are correlated with luminescence lines previously reported in GaN films, denoted the Y lines [M. A. Reshchikov and H. Morkoc, J. Appl. Phys. 97, 061301 (2005)]. The CL was partially quenched by electron beam irradiation for an extended time; the quenching was stronger for the free and shallow-donor-bound exciton peaks than for the defect-related peaks. The quenching appeared to saturate at high irradiation dose (with final intensity ≈30% of initial intensity) and was reversible on thermal cycling to room temperature. The electron irradiation-induced quenching of the CL is ascribed to charge injection and trapping phenomena.

  5. Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects

    SciTech Connect

    Robins, Lawrence H.; Bertness, Kris A.; Barker, Joy M.; Sanford, Norman A.; Schlager, John B.

    2007-06-01

    GaN nanowires with diameters of 50-250 nm, grown by catalyst-free molecular beam epitaxy, were characterized by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy at temperatures from 3 to 297 K. Both as-grown samples and dispersions of the nanowires onto other substrates were examined. The properties of the near-band-edge PL and CL spectra were discussed in Part I of this study by [Robins et al. [L. H. Robins, K. A. Bertness, J. M. Barker, N. A. Sanford, and J. B. Schlager, J. Appl. Phys. 101,113505 (2007)]. Spectral features below the band gap, and the effect of extended electron irradiation on the CL, are discussed in Part II. The observed sub-band-gap PL and CL peaks are identified as phonon replicas of the free-exciton transitions, or excitons bound to structural defects or surface states. The defect-related peaks in the nanowires are correlated with luminescence lines previously reported in GaN films, denoted the Y lines [M. A. Reshchikov and H. Morkoc, J. Appl. Phys. 97, 061301 (2005)]. The CL was partially quenched by electron beam irradiation for an extended time; the quenching was stronger for the free and shallow-donor-bound exciton peaks than for the defect-related peaks. The quenching appeared to saturate at high irradiation dose (with final intensity {approx_equal}30% of initial intensity) and was reversible on thermal cycling to room temperature. The electron irradiation-induced quenching of the CL is ascribed to charge injection and trapping phenomena.

  6. Al2O3 passivation effect in HfO2·Al2O3 laminate structures grown on InP substrates.

    PubMed

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-04-07

    The passivation effect of an Al2O3 layer on electrical properties were investigated in HfO2--Al2O3 laminate structures grown on InP substrate by atomic layer deposition (ALD). The chemical state using HR-XPS showed that interfacial reactions were dependent on the presence of the Al2O3 passivation layer and its sequence in the HfO2--Al2O3 laminate structures. The Al2O3/HfO2/Al2O3 structure showed the best electrical characteristics, due to the interfacial reaction, compared with those of different stacking structures. The top Al2O3 layer suppressed the interdiffusion of oxidizing species into the HfO2 films, while the bottom Al2O3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was effectively suppressed in the Al2O3/HfO2/Al2O3/InP structure than that of HfO2-on-InP system. Moreover, conductance data revealed that the Al2O3/ layer on InP reduces the midgap traps to 2.6 × 10(12) eV(-1)cm(-2) (compared with that of HfO2/InP = 5.4 × 10(12) eV(-1)cm(-2)). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  7. Electronic structures and magnetic moments of Co{sub 3}FeN thin films grown by molecular beam epitaxy

    SciTech Connect

    Ito, Keita; Sanai, Tatsunori; Yasutomi, Yoko; Toko, Kaoru; Honda, Syuta; Suemasu, Takashi; Zhu, Siyuan; Kimura, Akio; Ueda, Shigenori; Takeda, Yukiharu; Saitoh, Yuji; Imai, Yoji

    2013-12-02

    We evaluated electronic structures and magnetic moments in Co{sub 3}FeN epitaxial films on SrTiO{sub 3}(001). The experimentally obtained hard x-ray photoemission spectra of the Co{sub 3}FeN film have a good agreement with those calculated. Site averaged spin magnetic moments deduced by x-ray magnetic circular dichroism were 1.52 μ{sub B} per Co atom and 2.08 μ{sub B} per Fe atom at 100 K. They are close to those of Co{sub 4}N and Fe{sub 4}N, respectively, implying that the Co and Fe atoms randomly occupy the corner and face-centered sites in the Co{sub 3}FeN unit cell.

  8. Genetic diversity and population structure of the major peanut (Arachis hypogaea L.) cultivars grown in China by SSR markers.

    PubMed

    Ren, Xiaoping; Jiang, Huifang; Yan, Zhongyuan; Chen, Yuning; Zhou, Xiaojing; Huang, Li; Lei, Yong; Huang, Jiaquan; Yan, Liying; Qi, Yue; Wei, Wenhui; Liao, Boshou

    2014-01-01

    One hundred and forty-six highly polymorphic simple sequence repeat (SSR) markers were used to assess the genetic diversity and population structure of 196 peanut (Arachis Hypogaea L.) cultivars which had been extensively planted in different regions in China. These SSR markers amplified 440 polymorphic bands with an average of 2.99, and the average gene diversity index was 0.11. Eighty-six rare alleles with a frequency of less than 1% were identified in these cultivars. The largest Fst or genetic distance was found between the cultivars that adapted to the south regions and those to the north regions in China. A neighbor-joining tree of cultivars adapted to different ecological regions was constructed based on pairwise Nei's genetic distances, which showed a significant difference between cultivars from the south and the north regions. A model-based population structure analysis divided these peanut cultivars into five subpopulations (P1a, P1b, P2, P3a and P3b). P1a and P1b included most the cultivars from the southern provinces including Guangdong, Guangxi and Fujian. P2 population consisted of the cultivars from Hubei province and parts from Shandong and Henan. P3a and P3b had cultivars from the northern provinces including Shandong, Anhui, Henan, Hebei, Jiangsu and the Yangtze River region including Sichuan province. The cluster analysis, PCoA and PCA based on the marker genotypes, revealed five distinct clusters for the entire population that were related to their germplasm regions. The results indicated that there were obvious genetic variations between cultivars from the south and the north, and there were distinct genetic differentiation among individual cultivars from the south and the north. Taken together, these results provided a molecular basis for understanding genetic diversity of Chinese peanut cultivars.

  9. Emissions of volatile organic compounds and leaf structural characteristics of European aspen (Populus tremula) grown under elevated ozone and temperature.

    PubMed

    Hartikainen, Kaisa; Nerg, Anne-Marja; Kivimäenpää, Minna; Kontunen-Soppela, Sari; Mäenpää, Maarit; Oksanen, Elina; Rousi, Matti; Holopainen, Toini

    2009-09-01

    Northern forest trees are challenged to adapt to changing climate, including global warming and increasing tropospheric ozone (O(3)) concentrations. Both elevated O(3) and temperature can cause significant changes in volatile organic compound (VOC) emissions as well as in leaf anatomy that can be related to adaptation or increased stress tolerance, or are signs of damage. Impacts of moderately elevated O(3) (1.3x ambient) and temperature (ambient + 1 degrees C), alone and in combination, on VOC emissions and leaf structure of two genotypes (2.2 and 5.2) of European aspen (Populus tremula L.) were studied in an open-field experiment in summer 2007. The impact of O(3) on measured variables was minor, but elevated temperature significantly increased emissions of total monoterpenes and green leaf volatiles. Genotypic differences in the responses to warming treatment were also observed. alpha-Pinene emission, which has been suggested to protect plants from elevated temperature, increased from genotype 5.2 only. Isoprene emission from genotype 2.2 decreased, whereas genotype 5.2 was able to retain high isoprene emission level also under elevated temperature. Elevated temperature also caused formation of thinner leaves, which was related to thinning of epidermis, palisade and spongy layers as well as reduced area of palisade cells. We consider aspen genotype 5.2 to have better potential for adaptation to increasing temperature because of thicker photosynthetic active palisade layer and higher isoprene and alpha-pinene emission levels compared to genotype 2.2. Our results show that even a moderate elevation in temperature is efficient enough to cause notable changes in VOC emissions and leaf structure of these aspen genotypes, possibly indicating the effort of the saplings to adapt to changing climate.

  10. Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate

    NASA Astrophysics Data System (ADS)

    Mitsuhara, M.; Watanabe, N.; Yokoyama, H.; Iga, R.; Shigekawa, N.

    2016-09-01

    We have investigated the structural features of a strain-compensated InGaP/InGaP multiple-quantum-well (MQW) structure on GaAs (100) substrate with a band-gap energy of around 1.7 eV for solar cell applications. In transmission electron microscopy images, noticeable thickness modulation was observed in the barrier layers for a sample grown at the substrate temperature of 530 °C. Meanwhile, the X-ray diffraction patterns indicated that strain relaxation predominantly occurred in the well layers. Decreasing the substrate temperature from 530 to 510 °C was effective in suppressing both the thickness modulation and strain relaxation. Additionally, increasing the growth rate of the well layer further suppressed the thickness modulation. In room-temperature photoluminescence (PL) emission spectra, the sample grown at 510 °C showed approximately 50 times higher PL peak intensity than the one grown at 530 °C.

  11. Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates

    NASA Astrophysics Data System (ADS)

    Tracy, Brian D.; Li, Xiang; Liu, Xinyu; Furdyna, Jacek; Dobrowolska, Margaret; Smith, David J.

    2016-11-01

    Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150 °C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn=3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn>10:1) gave higher quality, single-phase SnSe2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011]SnSe// [ 1 1 bar 0 ] GaAs, while the diselenide films were consistent with the Space Group P 3 bar m1 , and had the epitaxial growth relationship [ 2 1 bar 1 bar 0 ]SnSe2// [ 1 1 bar 0 ] GaAs.

  12. Structural and dynamical properties of Bridgman-grown CdSexTe1-x (0

    NASA Astrophysics Data System (ADS)

    Talwar, Devki N.; Feng, Zhe Chuan; Lee, Jyh-Fu; Becla, P.

    2013-04-01

    Measurements of the Raman scattering and extended x-ray-absorption fine-structure (EXAFS) spectroscopy are reported on a series of Bridgman-grown zinc-blende CdTe1-xSex (0.35 ≥ x > 0.05) ternary alloys to empathize their lattice dynamical and structural properties. Low-temperature Raman spectra have revealed the classic CdTe-like (TO1, LO1) and CdSe-like (TO2, LO2) pairs of optical phonons. The composition-dependent peak positions of the LO2 modes exhibited shifts towards the higher-energy side, while those of the LO1 phonon frequencies have unveiled the slight redshifts. Detailed analyses of EXAFS data by using the first-principles bond orbital model have enabled us to estimate both the lattice relaxations and nearest-neighbor radial force constants around the Se/Te atoms in the CdTe/CdSe matrix. These results are methodically integrated in the “average t-matrix” formalism within the Green's-function theory for defining the impurity perturbations to comprehend the composition-dependent optical phonons in CdTe1-xSex alloys. Based on our comprehensive calculations of impurity modes in the low-composition regime x→ 0, we have assigned the weak phonon feature observed near ˜175 cm-1 in the low-temperature infrared reflectivity spectroscopy study to a SeTe localized vibrational mode.

  13. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.

    2015-05-01

    Unipolar-light emitting diode like structures were grown by NH3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In0.14Ga0.86N and In0.19Ga0.81N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schrödinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

  14. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    SciTech Connect

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P.; Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A.; Christofilos, D.

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the “M”-shape dependence of the (112{sup ¯}0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  15. Extended x-ray absorption fine structure and micro-Raman spectra of Bridgman grown Cd1-xZnxTe ternary alloys

    NASA Astrophysics Data System (ADS)

    Talwar, Devki N.; Feng, Zhe Chuan; Lee, Jyh-Fu; Becla, P.

    2014-03-01

    We have performed low-temperature micro-Raman scattering and extended x-ray absorption fine-structure (EXAFS) measurements on the Bridgman-grown bulk zinc-blende Cd1-x Zn x Te (1.0 ≧̸ x ≧̸ 0.03) ternary alloys to comprehend their structural and lattice dynamical properties. The micro-Raman results are carefully appraised to authenticate the classical two-phonon mode behavior insinuated by far-infrared (FIR) reflectivity study. The composition-dependent EXAFS experiments have revealed a bimodal distribution of the nearest-neighbor bond lengths—its analysis by first-principles bond-orbital model enabled us to estimate the lattice relaxations around Zn/Cd atoms in CdTe/ZnTe to help evaluate the necessary force constant variations for constructing the impurity-perturbation matrices. The simulated results of impurity vibrational modes by average-t-matrix Green’s function (ATM-GF) theory has put our experimental findings of the gap mode ˜153 cm-1 near x ≈ 1 on a much firmer ground.

  16. Structure and magnetism in strained Ge1-x-ySnxMny films grown on Ge(001) by low temperature molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Prestat, E.; Barski, A.; Bellet-Amalric, E.; Jacquot, J.-F.; Morel, R.; Tainoff, D.; Jain, A.; Porret, C.; Bayle-Guillemaud, P.; Jamet, M.

    2013-07-01

    In this letter, we study the structural and magnetic properties of Ge1-x-ySnxMny films grown on Ge(001) by low temperature molecular beam epitaxy using X-ray diffraction, high resolution transmission electron microscopy, and superconducting quantum interference device. Like in Mn doped Ge films, Mn atoms diffuse during the growth and aggregate into vertically aligned Mn-rich nanocolumns of a few nanometers in diameter. Transmission electron microscopy observations in plane view clearly indicate that the Sn incorporation is not uniform with concentration in Mn rich vertical nanocolumns lower than the detection limit of electron energy loss spectroscopy. The matrix exhibits a GeSn solid solution while there is a Sn-rich GeSn shell around GeMn nanocolumns. The magnetization in Ge1-x-ySnxMny layers is higher than in Ge1-xMnx films. This magnetic moment enhancement in Ge1-x-ySnxMny is probably related to the modification of the electronic structure of Mn atoms in the nanocolumns by the Sn-rich shell, which is formed around the nanocolumns.

  17. Harvesting and cryo-cooling crystals of membrane proteins grown in lipidic mesophases for structure determination by macromolecular crystallography.

    PubMed

    Li, Dianfan; Boland, Coilín; Aragao, David; Walsh, Kilian; Caffrey, Martin

    2012-09-02

    An important route to understanding how proteins function at a mechanistic level is to have the structure of the target protein available, ideally at atomic resolution. Presently, there is only one way to capture such information as applied to integral membrane proteins (Figure 1), and the complexes they form, and that method is macromolecular X-ray crystallography (MX). To do MX diffraction quality crystals are needed which, in the case of membrane proteins, do not form readily. A method for crystallizing membrane proteins that involves the use of lipidic mesophases, specifically the cubic and sponge phases(1-5), has gained considerable attention of late due to the successes it has had in the G protein-coupled receptor field(6-21) (www.mpdb.tcd.ie). However, the method, henceforth referred to as the in meso or lipidic cubic phase method, comes with its own technical challenges. These arise, in part, due to the generally viscous and sticky nature of the lipidic mesophase in which the crystals, which are often micro-crystals, grow. Manipulating crystals becomes difficult as a result and particularly so during harvesting(22,23). Problems arise too at the step that precedes harvesting which requires that the glass sandwich plates in which the crystals grow (Figure 2)(24,25) are opened to expose the mesophase bolus, and the crystals therein, for harvesting, cryo-cooling and eventual X-ray diffraction data collection. The cubic and sponge mesophase variants (Figure 3) from which crystals must be harvested have profoundly different rheologies(4,26). The cubic phase is viscous and sticky akin to a thick toothpaste. By contrast, the sponge phase is more fluid with a distinct tendency to flow. Accordingly, different approaches for opening crystallization wells containing crystals growing in the cubic and the sponge phase are called for as indeed different methods are required for harvesting crystals from the two mesophase types. Protocols for doing just that have been

  18. The compositional, structural, and magnetic properties of a Fe3O4/Ga2O3/GaN spin injecting hetero-structure grown by metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Xu, Zhonghua; Huang, Shimin; Tang, Kun; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Mingxiang; Wang, Wei; Zheng, Youdou

    2016-12-01

    In this article, the authors have designed and fabricated a Fe3O4/Ga2O3/GaN spin injecting hetero-structure by metal-organic chemical vapor deposition. The compositional, structural, and magnetic properties of the hetero-structure have been characterized and discussed. From the characterizations, the hetero-structure has been successfully grown generally. However, due to the unintentional diffusion of Ga ions from Ga2O3/GaN layers, the most part of the nominal Fe3O4 layer is actually in the form of GaxFe3-xO4 with gradually decreased x values from the Fe3O4/Ga2O3 interface to the Fe3O4 surface. Post-annealing process can further aggravate the diffusion. Due to the similar ionic radius of Ga and Fe, the structural configuration of the GaxFe3-xO4 does not differ from that of pure Fe3O4. However, the ferromagnetism has been reduced with the incorporation of Ga into Fe3O4, which has been explained by the increased Yafet-Kittel angles in presence of considerable amount of Ga incorporation. A different behavior of the magnetoresistance has been found on the as-grown and annealed samples, which could be modelled and explained by the competition between the spin-dependent and spin-independent conduction channels. This work has provided detailed information on the interfacial properties of the Fe3O4/Ga2O3/GaN spin injecting hetero-structure, which is the solid basis for further improvement and application of the structure.

  19. Structural and optical properties of La-doped BaSnO3 thin films grown by PLD

    NASA Astrophysics Data System (ADS)

    James, K. K.; Krishnaprasad, P. S.; Hasna, K.; Jayaraj, M. K.

    2015-01-01

    In this study the structural and optical properties of lanthanum-doped BaSnO3 powder samples and thin films deposited on fused silica were investigaed using laser ablation. Under an oxygen pressure of 5×10-4 mbar, phase pure BaSnO3 films with a lattice constant of 0.417 nm and grain size of 21 nm were prepared at 630 °C. The band gap of BaSnO3 powder sample and thin films was calculated to be 3.36 eV and 3.67 eV, respectively. There was a progressive increase in conductivity for thin films of BaSnO3 doped with 0~7 at% of La. The highest conductivity, 9 Scm-1, was obtained for 7 at% La-doped BaSnO3. Carrier concentration, obtained from Burstein-Moss (B-M) shift, nearly matches the measured values except for 3 at% and 10 at% La-doped BaSnO3 thin films.

  20. Genetic Structure and Molecular Variability Analysis of Citrus sudden death-associated virus Isolates from Infected Plants Grown in Brazil

    PubMed Central

    Matsumura, Emilyn Emy; Coletta Filho, Helvécio Della; de Oliveira Dorta, Silvia; Nouri, Shahideh; Machado, Marcos Antonio

    2016-01-01

    Citrus sudden death-associated virus (CSDaV) is a monopartite positive-sense single-stranded RNA virus that was suggested to be associated with citrus sudden death (CSD) disease in Brazil. Here, we report the first study of the genetic structure and molecular variability among 31 CSDaV isolates collected from both symptomatic and asymptomatic trees in CSD-affected areas. Analyses of partial nucleotide sequences of five domains of the CSDaV genomic RNA, including those encoding for the methyltransferase, the multi-domain region (MDR), the helicase, the RNA-dependent RNA polymerase and the coat protein, showed that the MDR coding region was the most diverse region assessed here, and a possible association between this region and virus adaption to different host or plant tissues is considered. Overall, the nucleotide diversity (π) was low for CSDaV isolates, but the phylogenetic analyses revealed the predominance of two main groups, one of which showed a higher association with CSD-symptomatic plants. Isolates obtained from CSD-symptomatic plants, compared to those obtained from asymptomatic plants, showed higher nucleotide diversity, nonsynonymous and synonymous substitution rates and number of amino acid changes on the coding regions located closer to the 5’ end region of the genomic RNA. This work provides new insights into the genetic diversity of the CSDaV, giving support for further epidemiological studies. PMID:27999249

  1. Community structures and antagonistic activities of the bacteria associated with surface-sterilized pepper plants grown in different field soils.

    PubMed

    Kang, Sin Ae; Han, Jae Woo; Kim, Beom Seok

    2016-12-01

    Endophytic bacteria may act individually or in consortia in controlling certain plant diseases. In this study, pepper plants (Capsicum annuum L. cv. Nokkwang) were cultivated in glasshouse conditions using field soils collected from two different geographic locations, Deokso (DS) and Gwangyang (GY) in Korea. Community structure and antifungal activity of pepper endophytic bacteria were analyzed using culture-independent (PCR-DGGE) and culture-dependent (plating) methods, respectively. Dissimilarities were observed between DGGE profiles of DS and GY samples at all plant tissues. However, sequencing of the major DGGE bands revealed an enrichment of Firmicutes in the leaves of plants propagated in either soil. Similar results were observed with the culturable assays. Firmicutes dominated the isolates from both leaf samples, DS leaf (100 %) and GY leaf (83.3 %), although the genus compositions of DS leaf and GY leaf isolates were different. We assessed the antifungal activity of each isolate recovered to better understand the potential role that these endophytic bacteria may play. Of the 27 representative isolates from DS plant samples, 17 isolates (63.0 %) had antagonistic activity against at least one of the fungi tested. Seventeen isolates from GY plant samples (58.6 %) displayed antagonistic properties. The results show that the endophytic communities differ in the same plant species when propagated in different soils. Exploring the internal tissues of plants growing in diverse soil environments could be a way to find potential candidates for biocontrol agents.

  2. Effect of substrate temperature on structure and luminescence properties of YVO4:Eu3+ thin films grown by PLD

    NASA Astrophysics Data System (ADS)

    Foka, K. E.; Dejene, B. F.; Swart, H. C.

    2016-03-01

    YVO4:Eu3+ thin films were deposited by pulse laser deposition at substrate temperatures of 200, 300 and 400 °C. The oxygen deposition background pressure was also changed from 20 to 85 mTorr at a substrate temperature of 400 °C. The films deposited at the higher temperatures showed a tetragonal phase in consistent with the standard JCPDS card 17-0341. The X-ray diffraction patterns obtained from the 200 °C sample showed only a very small peak at the (200) orientation. The other phosphor thin film showed an improved crystalline structure when the temperature was increased. Scanning electron microscope images indicated larger particles on the surface at the higher temperatures. Atomic force microscopy results showed smooth surfaces with small particles at lower temperatures and an increase in surface roughness at higher temperatures due to the improvement in crystallinity. The photoluminescence showed the typical emission peaks of Eu3+ in the red region at 594 and 618 nm attributed to the 5D0-7F1 and 5D0-7F2 transitions. The peaks at 652 and 699 nm corresponding to the 5D0-7F3 and 5D0-7F4 transitions were also observed. The spectra showed an increase in PL intensity when the deposition temperature and oxygen pressure were increased.

  3. Si-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment

    PubMed Central

    2013-01-01

    Silicon-rich Al2O3 films (Six(Al2O3)1−x) were co-sputtered from two separate silicon and alumina targets onto a long silicon oxide substrate. The effects of different annealing treatments on the structure and light emission of the films versus x were investigated by means of spectroscopic ellipsometry, X-ray diffraction, micro-Raman scattering, and micro-photoluminescence (PL) methods. The formation of amorphous Si clusters upon the deposition process was found for the films with x ≥ 0.38. The annealing treatment of the films at 1,050°C to 1,150°C results in formation of Si nanocrystallites (Si-ncs). It was observed that their size depends on the type of this treatment. The conventional annealing at 1,150°C for 30 min of the samples with x = 0.5 to 0.68 leads to the formation of Si-ncs with the mean size of about 14 nm, whereas rapid thermal annealing of similar samples at 1,050°C for 1 min showed the presence of Si-ncs with sizes of about 5 nm. Two main broad PL bands were observed in the 500- to 900-nm spectral range with peak positions at 575 to 600 nm and 700 to 750 nm accompanied by near-infrared tail. The low-temperature measurement revealed that the intensity of the main PL band did not change with cooling contrary to the behavior expected for quantum confined Si-ncs. Based on the analysis of PL spectrum, it is supposed that the near-infrared PL component originates from the exciton recombination in the Si-ncs. However, the most intense emission in the visible spectral range is due to either defects in matrix or electron states at the Si-nc/matrix interface. PMID:23758885

  4. Scandium effect on the luminescence of Er-Sc silicates prepared from multi-nanolayer films

    PubMed Central

    2014-01-01

    Polycrystalline Er-Sc silicates (Er x Sc2-x Si2O7 and Er x Sc2-x SiO5) were fabricated using multilayer nanostructured films of Er2O3/SiO2/Sc2O3 deposited on SiO2/Si substrates by RF sputtering and thermal annealing at high temperature. The films were characterized by synchrotron radiation grazing incidence X-ray diffraction, cross-sectional transmission electron microscopy, energy-dispersive X-ray spectroscopy, and micro-photoluminescence measurements. The Er-Sc silicate phase Er x Sc2-x Si2O7 is the dominant film, and Er and Sc are homogeneously distributed after thermal treatment because of the excess of oxygen from SiO2 interlayers. The Er concentration of 6.7 × 1021 atoms/cm3 was achieved due to the presence of Sc that dilutes the Er concentration and generates concentration quenching. During silicate formation, the erbium diffusion coefficient in the silicate phase is estimated to be 1 × 10-15 cm2/s at 1,250°C. The dominant Er x Sc2 - x Si2O7 layer shows a room-temperature photoluminescence peak at 1,537 nm with the full width at half maximum (FWHM) of 1.6 nm. The peak emission shift compared to that of the Y-Er silicate (where Y and Er have almost the same ionic radii) and the narrow FWHM are due to the small ionic radii of Sc3+ which enhance the crystal field strength affecting the optical properties of Er3+ ions located at the well-defined lattice sites of the Sc silicate. The Er-Sc silicate with narrow FWHM opens a promising way to prepare photonic crystal light-emitting devices. PMID:25114648

  5. Effects of Concentration and Substrate Type on Structure and Conductivity of p-Type CuS Thin Films Grown by Spray Pyrolysis Deposition

    NASA Astrophysics Data System (ADS)

    Sabah, Fayroz A.; Ahmed, Naser M.; Hassan, Z.

    2017-01-01

    Copper sulphide (CuS) thin films were grown upon Ti, indium tin oxide (ITO), and glass substrates by using spray pyrolysis deposition at 200°C. The films exhibited good adhesion compared to chemical bath deposition. CuCl2·2H2O and Na2S2O3·5H2O precursors were used as Cu2+ and S2- sources, respectively. Two concentrations (i.e., 0.2 M and 0.4 M) were selected in this study. X-ray diffraction analysis reveals that the films with 0.2 M showed only the formation of a covellite CuS phase having a hexagonal crystal structure with diffraction peaks of low intensity. For 0.4 M concentration, in addition to the covellite CuS phase, chalcocite Cu2S phase having a hexagonal crystal structure also appeared with relatively higher intensity peaks for all thin films. Field-emission scanning electron microscopy observations showed the formation of small grains for 0.2 M, whereas a mixture of grains with square-like shape and nanoplates were formed for 0.4 M. Depending on the 0.2 M and 0.4 M thin films thicknesses (3.2 μm and 4 μm, respectively), the band gap energy was obtained from optical measurements to be approximately 2.64 eV for 0.2 M (pure CuS phase), which slightly decreased up to 2.56 eV for 0.4 M concentration. Hall effect measurements showed that all grown films are p-type. The 0.2 M film exhibited much lower sheet resistance ( R sh = 33.96 Ω/Sq-55.70 Ω/Sq) compared to 0.4 M film ( R sh = 104.33 Ω/Sq-466.6 Ω/Sq). Moreover, for both concentrations, the films deposited onto ITO substrate showed the lowest sheet resistance ( R sh = 33.96 Ω/Sq-104.33 Ω/Sq).

  6. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Lu, Zhong-Lin; Zou, Wen-Qin; Xu, Ming-Xiang; Zhang, Feng-Ming; Du, You-Wei

    2009-11-01

    High-quality Ga-doped ZnO (ZnO:Ga) single crystalline films with various Ga concentrations are grown on a-plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2 at.% and the lowest resistivity can reach 1.92 × 10-4 Ω·cm at room temperature, close to the best value reported. In contrast to ZnO:Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO:Ga thin film is discussed.

  7. (abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Pike, W. T.; George, T.; Khan, M. A.; Kuznia, J. N.

    1994-01-01

    The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

  8. Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H-SiC by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Tian, Li-Xin; Zhang, Feng; Shen, Zhan-Wei; Yan, Guo-Guo; Liu, Xing-Fang; Zhao, Wan-Shun; Wang, Lei; Sun, Guo-Sheng; Zeng, Yi-Ping

    2016-12-01

    Annealing effects on structural and compositional performances of Al2O3 thin films on 4H-SiC substrates are studied comprehensively. The Al2O3 films are grown by atomic layer deposition through using trimethylaluminum and H2O as precursors at 300 °C, and annealed at various temperatures in ambient N2 for 1 min. The Al2O3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750 °C to 768 °C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy (XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar. Project supported by the National Basic Research Program of China (Grant No. 2015CB759600), the National Natural Science Foundation of China (Grant Nos. 61474113, 61574140, and 61274007), and the Beijing Nova Program, China (Grant No. xx2016071), and the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201502).

  9. Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germanium

    NASA Astrophysics Data System (ADS)

    Jia, S. P.; Chen, G. F.; He, W.; Dai, P.; Chen, J. X.; Lu, S. L.; Yang, H.

    2014-10-01

    Structure and optical properties of GaInP epilayer with the ultrathin interfacial layers grown on germanium by metal-organic vapor-phase epitaxy (MOVPE) were characterized by high resolution transmission electron microscopy (HRTEM), photoluminescence (PL), Raman as well as surface morphology measurement. A five angstroms (5 Å) AlAs interfacial layer results in the decrease of PL intensity arising from the emission of [Ge(Ga,In) - V(Ga,In)] complex. With the incorporation of AlAs interfacial layer, an increased ordered degree of GaInP epilayer is observed. On the basis of the combination of step-terrace-reconstruction (STR) mode with the dimer-induced-stress model, a CuPt-B type ordering of GaInP which is related to AlAs reconstruction with 2× periodicity process is proposed to explain this effect. Long range order occurs as a consequence of the minimization of the strain energy with increased interfacial layer thickness from 5 Å to 5 nm.

  10. Structure and electronic properties of Zn-tetra-phenyl-porphyrin single- and multi-layers films grown on Fe(001)-p(1 × 1)O

    NASA Astrophysics Data System (ADS)

    Bussetti, Gianlorenzo; Calloni, Alberto; Celeri, Matteo; Yivlialin, Rossella; Finazzi, Marco; Bottegoni, Federico; Duò, Lamberto; Ciccacci, Franco

    2016-12-01

    The structure and the electronic properties of thin (1 molecular layer) and thick (20 molecular layers) Zn-tetra-phenyl-porphyrin (ZnTPP) films grown on a single metal oxide (MO) layer, namely Fe(001)-p(1 × 1)O, are shown and discussed. During the first stages of deposition, the ultra-thin MO layer reduces the molecule-substrate interaction enhancing the molecular diffusivity with the respect to other investigated substrates [namely, Si(111), Au(001) and oxygen-free Fe(001)]. On Fe(001)-p(1 × 1)O, ZnTPP molecules form an ordered and stable square-lattice array. The photoemission analysis of the valence bands reveals that all the characteristic features of the molecule are already visible in the 1 monolayer-thick sample spectrum. Similarly, the core level investigation suggests a weak molecule perturbation. The ZnTPP/Fe(001)-p(1 × 1)O interface represents a prototypical system to investigate the organic film adhesion on ultra-thin MO layers and the processes involved during the film growth.

  11. XPS analysis and structural and morphological characterization of Cu2ZnSnS4 thin films grown by sequential evaporation

    NASA Astrophysics Data System (ADS)

    Gordillo, G.; Calderón, C.; Bartolo-Pérez, P.

    2014-06-01

    This work describes a procedure to grow single phase Cu2ZnSnS4 (CZTS) thin films with tetragonal-kesterite type structure, through sequential evaporation of the elemental metallic precursors under sulphur vapor supplied from an effusion cell. X-ray diffraction analysis (XRD) is mostly used for phase identification but cannot clearly distinguish the formation of secondary phases such as Cu2SnS3 (CTS) because both compounds have the same diffraction pattern; therefore the use of a complementary technique is needed. Raman scattering analysis was used to distinguish these phases. The influence of the preparation conditions on the morphology and phases present in CZTS thin films were investigated through measurements of scanning electron microscopy (SEM) and XRD, respectively. From transmittance measurements, the energy band gap of the CZTS films was estimated to be around 1.45 eV. The limitation of XRD to identify some of the remaining phases after the growth process are investigated and the results of Raman analysis on the phases formed in samples grown by this method are presented. Further, the influence of the preparation conditions on the homogeneity of the chemical composition in the volume was studied by X-ray photoelectron spectroscopy (XPS) analysis.

  12. Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates

    NASA Astrophysics Data System (ADS)

    Mukai, Takashi; Nakamura, Shuji

    1999-10-01

    Ultraviolet (UV) InGaN and GaN single-quantum-well-structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire only under high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG even under low-and high-current operations, due to the lack of localized energy states formed by alloy composition fluctuations. When the emission wavelengths were in the blue and green regions, EQE was almost the same between LEDs on both ELOG and sapphire due to a large number of deep localized energy states formed by large alloy composition fluctuations. The localized energy states are responsible for the high efficiency of InGaN-based LEDs in spite of a large number of dislocations.

  13. Deletion of FtsH11 protease has impact on chloroplast structure and function in Arabidopsis thaliana when grown under continuous light.

    PubMed

    Wagner, Raik; von Sydow, Lotta; Aigner, Harald; Netotea, Sergiu; Brugière, Sabine; Sjögren, Lars; Ferro, Myriam; Clarke, Adrian; Funk, Christiane

    2016-11-01

    The membrane-integrated metalloprotease FtsH11 of Arabidopsis thaliana is proposed to be dual-targeted to mitochondria and chloroplasts. A bleached phenotype was observed in ftsh11 grown at long days or continuous light, pointing to disturbances in the chloroplast. Within the chloroplast, FtsH11 was found to be located exclusively in the envelope. Two chloroplast-located proteins of unknown function (Tic22-like protein and YGGT-A) showed significantly higher abundance in envelope membranes and intact chloroplasts of ftsh11 and therefore qualify as potential substrates for the FtsH11 protease. No proteomic changes were observed in the mitochondria of 6-week-old ftsh11 compared with wild type, and FtsH11 was not immunodetected in these organelles. The abundance of plastidic proteins, especially of photosynthetic proteins, was altered even during standard growth conditions in total leaves of ftsh11. At continuous light, the amount of photosystem I decreased relative to photosystem II, accompanied by a drastic change of the chloroplast morphology and a drop of non-photochemical quenching. FtsH11 is crucial for chloroplast structure and function during growth in prolonged photoperiod.

  14. Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)

    SciTech Connect

    Bouhafs, C. Darakchieva, V.; Persson, I. L.; Persson, P. O. Å.; Yakimova, R.; Tiberj, A.; Paillet, M.; Zahab, A.-A.; Landois, P.; Juillaguet, S.; Schöche, S.; Schubert, M.

    2015-02-28

    Understanding and controlling growth of graphene on the carbon face (C-face) of SiC presents a significant challenge. In this work, we study the structural, vibrational, and dielectric function properties of graphene grown on the C-face of 4H-SiC by high-temperature sublimation in an argon atmosphere. The effect of growth temperature on the graphene number of layers and crystallite size is investigated and discussed in relation to graphene coverage and thickness homogeneity. An amorphous carbon layer at the interface between SiC and the graphene is identified, and its evolution with growth temperature is established. Atomic force microscopy, micro-Raman scattering spectroscopy, spectroscopic ellipsometry, and high-resolution cross-sectional transmission electron microscopy are combined to determine and correlate thickness, stacking order, dielectric function, and interface properties of graphene. The role of surface defects and growth temperature on the graphene growth mechanism and stacking is discussed, and a conclusion about the critical factors to achieve decoupled graphene layers is drawn.

  15. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    DOE PAGES

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; ...

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match themore » polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.« less

  16. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    SciTech Connect

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.

  17. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH{sub 3} molecular beam epitaxy

    SciTech Connect

    Browne, David A.; Speck, James S.; Mazumder, Baishakhi; Wu, Yuh-Renn

    2015-05-14

    Unipolar-light emitting diode like structures were grown by NH{sub 3} molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In{sub 0.14}Ga{sub 0.86}N and In{sub 0.19}Ga{sub 0.81}N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schrödinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

  18. Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties

    NASA Astrophysics Data System (ADS)

    Zarubin, Sergei; Suvorova, Elena; Spiridonov, Maksim; Negrov, Dmitrii; Chernikova, Anna; Markeev, Andrey; Zenkevich, Andrei

    2016-11-01

    Since the discovery of ferroelectricity (FE) in HfO2-based thin films, they are gaining increasing attention as a viable alternative to conventional FE in the next generation of non-volatile memory devices. In order to further increase the density of elements in the integrated circuits, it is essential to adopt a three-dimensional design. Since atomic layer deposition (ALD) processes are extremely conformal, ALD is the favored approach in the production of 3D ferroelectric random access memory. Here, we report the fabrication of fully ALD-grown capacitors comprising a 10-nm-thick FE Hf0.5Zr0.5O2 layer sandwiched between TiN electrodes, which are subjected to a detailed investigation of the structural and functional properties. The robust FE properties of Hf0.5Zr0.5O2 films in capacitors are established by several alternative techniques. We demonstrate a good scalability of TiN/Hf0.5Zr0.5O2/TiN FE capacitors down to 100-nm size and the polarization retention in the test "one transistor-one capacitor" (1T-1C) cells after 1010 writing cycles. The presence of a non-centrosymmetric orthorhombic phase responsible for FE properties in the alloyed polycrystalline Hf0.5Zr0.5O2 films is established by transmission electron microscopy. Given the ability of the ALD technique to grow highly conformal films and multilayered structures, the obtained results indicate the route for the design of FE non-volatile memory devices in 3D integrated circuits.

  19. Study on growth, structural, optical, thermal and mechanical properties of organic single crystal ethyl p-amino benzoate (EPAB) grown using vertical Bridgman technique

    NASA Astrophysics Data System (ADS)

    Muthuraja, A.; Kalainathan, S.

    2017-02-01

    Ethyl p-aminobenzoate (EPAB) single crystal was grown using vertical Bridgman technique (VBT). The crystal system of grown crystal was identified, and lattice parameters have been measured from the powder X-ray diffraction (PXRD). The optical transparency of EPAB single crystal was 55%, and the cut-off wavelength was found to be 337 nm. The thermal stability of EPAB single crystal was analyzed by thermogravimetric analysis. Etching studie were carried out for the grown crystal using different solvents, and etch pit density (EPD) was calculated and compared. Vickers microhardness (Hv) measurements revealed that EPAB belongs to the category of soft material. The dielectric studies reveal that the dielectric constant and dielectric loss of grown crystal decreases with increasing frequency for various temperatures. The third-order nonlinear optical property of EPAB was investigated and compared with other organic crystals. The evaluation of third-order optical properties such as nonlinear refractive index (n2), nonlinear absorption (β) and third-order nonlinear susceptibility (χ3) have found to be in the range of 10-11 m2/W, 10-4 m/W and 10-5 esu respectively. The Laser damage threshold energy of EPAB was measured using Nd: YAG laser. The blue emission of the grown crystal was identified by photoluminescence (PL) spectra measurements. The second harmonic generation (SHG) for the grown EPAB crystal was confirmed by Kurtz powder technique.

  20. Molecule diagram from space-grown crystals

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Researchers' at Hauptman-Woodward Medical Research Institute, in Buffalo, N.Y. have analyzed the molecular structures of insulin crystals grown during Space Shuttle experiments and are unlocking the mystery of how insulin works.

  1. Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range

    NASA Astrophysics Data System (ADS)

    Gladysiewicz, M.; Kudrawiec, R.; Wartak, M. S.

    2016-02-01

    The 8-band kp Hamiltonian is applied to calculate electronic band structure and material gain in III-V-Bi quantum wells (QWs) grown on GaSb substrates. We analyzed three Bi-containing QWs (GaSbBi, GaInSbBi, and GaInAsSbBi) and different Bi-free barriers (GaSb and AlGaInAsSb), lattice matched to GaSb. Bi-related changes in the electronic band structure of III-V host incorporated into our formalism are based on recent ab-initio calculations for ternary alloys (III-Ga-Bi and III-In-Bi) [Polak et al., Semicond. Sci. Technol. 30, 094001 (2015)]. When compared to Bi-free QWs, the analyzed Bi-containing structures show much better quantum confinement in the valence band and also larger redshift of material gain peak per percent of compressive strain. For 8 nm thick GaInSb/GaSb QWs, material gain of the transverse electric (TE) mode is predicted at 2.1 μm for the compressive strain of ɛ = 2% (32% In). The gain peak of the TE mode in 8 nm thick GaSbBi/GaSb QW reaches this wavelength for compressive strain of 0.15% that corresponds to about 5% Bi. It has also been shown that replacing In atoms by Bi atoms in GaInSbBi/GaSb QWs while keeping the same compressive strain (ɛ = 2%) in QW region enhances and shifts gain peak significantly to the longer wavelengths. For 8 nm wide GaInSbBi/GaSb QW with 5% Bi, the gain peak is predicted at around 2.6 μm, i.e., is redshifted by about 400 nm compared to Bi-free QW. For 8 nm wide GaInAsSbSb QWs (80% In, 5% Bi, and ɛ = 2%) with proper AlGaInAsSb barriers, it is possible to achieve large material gain even at 4.0 μm.

  2. Composition dependences of crystal structure and electrical properties of epitaxial Pb(Zr,Ti)O3 films grown on Si and SrTiO3 substrates

    NASA Astrophysics Data System (ADS)

    Okamoto, Shoji; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

    2016-10-01

    {100}-oriented Pb(Zr x ,Ti1- x )O3 (PZT) thin films of approximately 2 µm thickness and Zr/(Zr + Ti) ratios of 0.39-0.65 were epitaxially grown on (100)cSrRuO3//(100)SrTiO3 (STO) and (100)cSrRuO3//(100)cLaNiO3//(100)CeO2//(100)YSZ//(100)Si (Si) substrates having different thermal expansion coefficients by pulsed metal-organic chemical vapor deposition (MOCVD). The effects of Zr/(Zr + Ti) ratio and type of substrate on the crystal structure and dielectric, ferroelectric and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that both films changed from having a tetragonal symmetry to rhombohedral symmetry through the coexisting region with increasing Zr/(Zr + Ti) ratio. This region showed the Zr/(Zr + Ti) ratios of 0.45-0.59 for the films on the STO substrates that were wider than the films on the Si substrates. Saturation polarization values were minimum at approximately Zr/(Zr + Ti) = 0.50 for the films on the STO substrates, and no obvious Zr/(Zr + Ti) ratio dependence was detected in the films on the Si substrates. On the other hand, the maximum field-induced strain values measured by scanning force microscopy at approximately Zr/(Zr + Ti) = 0.50 at 100 kV/cm were about 0.5 and 0.1% in the films on the Si and STO, respectively.

  3. Structural and optical properties of AgAlTe{sub 2} layers grown on sapphire substrates by closed space sublimation method

    SciTech Connect

    Uruno, A. Usui, A.; Kobayashi, M.

    2014-11-14

    AgAlTe{sub 2} layers were grown on a- and c-plane sapphire substrates using a closed space sublimation method. Grown layers were confirmed to be single phase layers of AgAlTe{sub 2} by X-ray diffraction. AgAlTe{sub 2} layers were grown to have a strong preference for the (112) orientation on both kinds of substrates. The variation in the orientation of grown layers was analyzed in detail using the X-ray diffraction pole figure measurement, which revealed that the AgAlTe{sub 2} had a preferential epitaxial relationship with the c-plane sapphire substrate. The atomic arrangement between the (112) AgAlTe{sub 2} layer and sapphire substrates was compared. It was considered that the high order of the lattice arrangement symmetry probably effectively accommodated the lattice mismatch. The optical properties of the grown layer were also evaluated by transmittance measurements. The bandgap energy was found to be around 2.3 eV, which was in agreement with the theoretical bandgap energy of AgAlTe{sub 2}.

  4. Studies on the growth aspects, structural, thermal, dielectric and third order nonlinear optical properties of solution grown 4-methylpyridinium p-nitrophenolate single crystal

    NASA Astrophysics Data System (ADS)

    Devi, S. Reena; Kalaiyarasi, S.; Zahid, I. MD.; Kumar, R. Mohan

    2016-11-01

    An ionic organic optical crystal of 4-methylpyridinium p-nitrophenolate was grown from methanol by slow evaporation method at ambient temperature. Powder and single crystal X-ray diffraction studies revealed the crystal system and its crystalline perfection. The rocking curve recorded from HRXRD study confirmed the crystal quality. FTIR spectral analysis confirmed the functional groups present in the title compound. UV-visible spectral study revealed the optical window and band gap of grown crystal. The thermal, electrical and surface laser damage threshold properties of harvested crystal were examined by using TGA/DTA, LCR/Impedance Analyzer and Nd:YAG laser system respectively. The third order nonlinear optical property of grown crystal was elucidated by Z-scan technique.

  5. Structural Study of SiC Nanoparticles Grown by Inductively Coupled Plasma and Laser Pyrolysis for Nano-structured Ceramics Elaboration

    SciTech Connect

    Leconte, Yann; Portier, Xavier; Herlin-Boime, Nathalie; Reynaud, Cecile

    2008-07-01

    Refractory carbide nano-structured ceramics as SiC constitute interesting materials for high temperature applications and particularly for fourth generation nuclear plants. To elaborate such nano-materials, weighable amounts of SiC nano-powders have to be synthesized first with an accurate control of the grain size and stoichiometry. The inductively coupled plasma and the laser pyrolysis techniques, respectively developed at EMPA Thun and CEA Saclay, allow meeting these requirements. Both techniques are able to produce dozens of grams per hour of silicon carbide nano-powders. The particle size can be adjusted down to around 20 nm for the plasma synthesis and even down to 5-10 nm for the laser pyrolysis. The stoichiometry Si/C can be tuned by the addition of methane into the plasma and acetylene for the laser process. (authors)

  6. Structural properties of phase-change InSbTe thin films grown at a low temperature by metalorganic chemical vapor deposition.

    PubMed

    Ahn, Jun-Ku; Park, Kyoung-Woo; Hur, Sung-Gi; Kim, Chung-Soo; Lee, Jeong-Yong; Yoon, Soon-Gil

    2011-01-01

    The feasibility of new InSbTe (IST) chalcogenide materials at the deposition temperatures of 225 and 250 degrees C using metalorganic chemical vapor deposition (MOCVD) for phase-change random access memory (PRAM) applications was investigated. Samples grown at 225 degrees C consisted of the main InTe phase, including a small amount of Sb. On the other hand, samples grown at 250 degrees C included the crystalline phases of InSb and InSbTe. MOCVD-IST materials are powerful candidates for highly-integrated PRAM applications.

  7. Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs

    NASA Astrophysics Data System (ADS)

    Azoulay, R.; Clei, A.; Dugrand, L.; Draïdia, auN.; Leroux, G.; Biblemont, S.

    1991-01-01

    The growth of GaAs on InP has attracted considerable interest recently because of the possibility of integration of GaAs electronic devices and 1.3 μm optical devices on the same wafer. In this work, we have investigated the growth of GaAs MESFETs and doped channel MIS-like FETs on InP by atmospheric pressure OMCVD. Because of the difference between the thermal expansion coefficient of GaAs and InP, the layers are under biaxial strain. The lowest FWHM of the (004) reflection curve of the double crystal X-ray diffraction spectra is 110 arc sec for a 12 μm thick layer. We have investigated the influence of the substrate temperature and of the arsine molar fraction on the residual carrier concentration of layers grown side by side on GaAs and on InP. The GaAs layers grown on InP are much more compensated than the layers grown on GaAs, indicating a higher incorporation of impurities. On MESFETs grown on InP, gm = 200mS/mm with Fmax higher than 30 GHz. On doped-channel MIS-like FETs on InP, we have measured gm = 145mS/mm.

  8. Temperature-induced changes in optical properties of thin film TiO2-Al2O3 bi-layer structures grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ali, Rizwan; Saleem, Muhammad Rizwan; Honkanen, Seppo

    2016-02-01

    We investigate the optical properties and corresponding temperature-induced changes in highly uniform thin amorphous films and their bi-layer stacks grown by Atomic Layer Deposition (ALD). The environmentally driven conditions such as temperature, humidity and pressure have a significant influence on optical properties of homogeneous and heterogeneous bi-layer stacked structures of TiO2-Al2O3 and subsequently affect the specific sensitive nature of optical signals from nano-optical devices. Owing to the super hydrophilic behavior and inhibited surface defects in the form of hydrogenated species, the thermo-optic coefficient (TOC) of ~ 100 nm thick ALD-TiO2 films vary significantly with temperature, which can be used for sensing applications. On the other hand, the TOC of ~ 100 nm thick ALD-Al2O3 amorphous films show a differing behavior with temperature. In this work, we report on reduction of surface defects in ALD-TiO2 films by depositing a number of ultra-thin ALD-Al2O3 films to act as impermeable barrier layers. The designed and fabricated heterostructures of ALD-TiO2/Al2O3 films with varying ALD-Al2O3 thicknesses are exploited to stabilize the central resonance peak of Resonant Waveguide Gratings (RWGs) in thermal environments. The temperature-dependent optical constants of ALD-TiO2/Al2O3 bi-layer films are measured by a variable angle spectroscopic ellipsometer (VASE), covering a wide spectral range 380 <= λ <= 1800 nm at a temperature range from 25 to 105 °C. The Cauchy model is used to design and retrieve refractive indices at these temperatures, measured with three angles of incidence (59°, 67°, and 75°). The optical constants of 100 nm thick ALD-TiO2 and various combinational thicknesses of ALD-Al2O3 films are used to predict TOCs using a polynomial fitting algorithm.

  9. In Situ Oxidation of GaN Layer and Its Effect on Structural Properties of Ga2O3 Films Grown by Plasma-Assisted Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Ngo, Trong Si; Le, Duc Duy; Tran, Duy Khanh; Song, Jung-Hoon; Hong, Soon-Ku

    2017-01-01

    Plasma-assisted molecular beam epitaxy (PAMBE) was used to grow Ga2O3 films on oxidized GaN layers on nitrided sapphire substrates. The GaN layer was grown by PAMBE, and the in situ oxidation of the GaN layer was achieved through exposure to oxygen plasma, which resulted in the formation of monoclinic β-Ga2O3. Crystalline monoclinic β-Ga2O3 films were grown on the GaN layers, with and without oxidation. The orientation relationships were [11overline{2} 0 ] Al2O3//[1overline{1} 00 ] AlN//[1overline{1} 00 ] GaN//[102] β-Ga2O3 and [1overline{1} 00 ] Al2O3//[11overline{2} 0 ] AlN//[11overline{2} 0 ] GaN//[010] β-Ga2O3. The grown β-Ga2O3 films were not single-crystalline but showed rotational domains along the growth direction with three variations, which resulted in six-fold rotational symmetry instead of two-fold rotational symmetry. The surface roughness of the grown β-Ga2O3 film was closely reflected to that of as-grown GaN and oxidized GaN. By analyzing the x-ray omega rocking curves for the on-axis (overline{2} 01 ) and off-axis (002) reflections, it was concluded that rotational domains dominantly affected the crystal quality of the β-Ga2O3 films.

  10. Optical properties and structural investigations of (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells grown by molecular beam epitaxy

    SciTech Connect

    Rosales, Daniel; Gil, Bernard; Bretagnon, Thierry; Brault, Julien; Vennéguès, Philippe; Nemoz, Maud; Mierry, Philippe de; Damilano, Benjamin; Massies, Jean; Bigenwald, Pierre

    2015-07-14

    We have grown (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells (QWs) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy on m-plane oriented sapphire substrates. The performance of epitaxial growth of GaN/Al{sub 0.5}Ga{sub 0.5}N heterostructures on the semi-polar orientation (11-22) in terms of surface roughness and structural properties, i.e., strain relaxation mechanisms is discussed. In addition, high resolution transmission electron microscopy reveals very smooth QW interfaces. The photoluminescence of such samples are strictly originating from radiative recombination of free excitons for temperatures above 100 K. At high temperature, the population of localized excitons, moderately trapped (5 meV) at low temperature, is negligible.

  11. Structural and optical properties of ZrB 2 and Hf xZr 1-xB 2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates

    NASA Astrophysics Data System (ADS)

    Roucka, R.; An, Y.-J.; Chizmeshya, A. V. G.; D'Costa, V. R.; Tolle, J.; Menéndez, J.; Kouvetakis, J.

    2008-11-01

    ZrB2 and HfxZr1-xB2 films were grown on 4° miscut Si(1 1 1) substrates by chemical vapor deposition of gaseous Hf(BH4)4 and Zr(BH4)4. The films display superior structural and optical properties when compared with ZrB2 films grown on on-axis Si(1 1 1). The observed improvements include an optically featureless surface with rms roughness of ∼2.5-3.5 nm, a ∼50% reduction in the amount of residual strain, and a ∼50% lower resistivity. These properties should promote the use of diboride films as buffer layers for nitride semiconductor epitaxy on large-area Si substrates.

  12. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Potin, V.; Hahn, E.; Rosenauer, A.; Gerthsen, D.; Kuhn, B.; Scholz, F.; Dussaigne, A.; Damilano, B.; Grandjean, N.

    2004-02-01

    We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local and average In concentrations and the In distribution in the quantum wells were determined using the digital analysis of lattice images (DALI) method based on the evaluation of HRTEM lattice-fringe images. Similar lateral fluctuations of the In concentration were observed in MBE- and MOVPE-grown samples. The In concentration varies on a small scale (In-rich clusters with lateral extensions below 4 nm) and on a larger scale of a few 10 nm, which is attributed to phase separation. In contrast, the In distribution in growth direction differs significantly in the MBE and MOVPE samples which is explained by different In-segregation efficiencies and In desorption before the GaN cap layer deposition during MBE.

  13. Structural and photoluminescence studies on europium-doped lithium tetraborate (Eu:Li2B4O7) single crystal grown by microtube Czochralski (μT-Cz) technique

    NASA Astrophysics Data System (ADS)

    A, Kumaresh; R, Arun Kumar; N, Ravikumar; U, Madhusoodanan; B, S. Panigrahi; K, Marimuthu; M, Anuradha

    2016-05-01

    Rare earth europium (Eu3+)-doped lithium tetraborate (Eu:Li2B4O7) crystal is grown from its stoichiometric melt by microtube Czochralski pulling technique (μT-Cz) for the first time. The grown crystals are subjected to powder x-ray diffraction (PXRD) analysis which reveals the tetragonal crystal structure of the crystals. UV-vis-NIR spectral analysis is carried out to study the optical characteristics of the grown crystals. The crystal is transparent in the entire visible region, and the lower cutoff is observed to be at 304 nm. The existence of BO3 and BO4 bonding structure and the molecular associations are analyzed by Fourier transform infrared (FTIR) spectroscopy. The results of excitation and emission-photoluminescence spectra of europium ion incorporated in lithium tetraborate (LTB) single crystal reveal that the observations of peaks at 258, 297, and 318 nm in the excitation spectra and peaks at 579, 591, 597, 613, and 651 nm are observed in the emission spectra. The chromaticity coordinates are calculated from the emission spectra, and the emission intensity of the grown crystal is characterized through a CIE 1931 (Commission International d’Eclairage) color chromaticity diagram. Project supported by the Department of Science and Technology-Science and Engineering Research Board (Grant No. SR/S2/LOP-0012/2011), the Government of India for Awarding Major Research Project, the University Grants Commission-Department of Atomic Research-Consortium for Scientific Research (Grant No. CSR-KN/CSR-63/2014-2015/503), and the Kalpakkam and Indore, India.

  14. Structural and electrical characterization of NbO2 vertical devices grown on TiN coated SiO2/Si substrate

    NASA Astrophysics Data System (ADS)

    Joshi, Toyanath; Borisov, Pavel; Lederman, David

    Due to its relatively high MIT temperature (1081 K) and current-controlled negative differential resistance, NbO2 is a robust candidate for memory devices and electrical switching applications. In this work, we present in-depth analysis of NbO2 thin film vertical devices grown on TiN coated SiO2/Si substrates using pulsed laser deposition (PLD). Two of the films grown in 1 mTorr and 10 mTorr O2/Ar (~7% O2) mixed growth pressures were studied. The formation of NbO2 phase was confirmed by Grazing Incidence X-ray Diffractometry (GIXRD), X-ray Photoelectron Spectroscopy (XPS) and current vs. voltage measurements. A probe station tip (tip size ~2 μm) or conductive AFM tip was used as a top and TiN bottom layer was used as a bottom contact. Device conductivity showed film thickness and contact size dependence. Current pulse measurements, performed in response to applied triangular voltage pulses, showed a non-linear threshold switching behavior for voltage pulse durations of ~100 ns and above. Self-sustained current oscillations were analyzed in terms of defect density presented in the film. Supported by FAME (sponsored by MARCO and DARPA, Contract 2013-MA-2382), WV Higher Education Policy Commission Grant (HEPC.dsr.12.29), and WVU SRF. We also thank S. Kramer from Micron for providing the TiN-coated Si substrates.

  15. Structural and optical properties of dense vertically aligned ZnO nanorods grown onto silver and gold thin films by galvanic effect with iron contamination

    SciTech Connect

    Scarpellini, D.; Paoloni, S.; Medaglia, P.G.; Pizzoferrato, R.; Orsini, A.; Falconi, C.

    2015-05-15

    Highlights: • ZnO nanorods were grown on Au and Ag films in aqueous solution by galvanic effect. • The method is prone to metal contamination which can influence the ZnO properties. • Iron doping improves the lattice matching between ZnO and the substrate. • Energy levels of point defects are lowered and the light emission is red-shifted. • Galvanic-induced nucleation starts and proceeds continuously during the growth. - Abstract: Dense arrays of vertically aligned ZnO nanorods have been grown onto either silver or gold seedless substrates trough a simple hydrothermal method by exploiting the galvanic effect between the substrate and metallic parts. The nanorods exhibit larger bases and more defined hexagonal shapes, in comparison with standard non-galvanic wet-chemistry synthesis. X-ray diffraction (XRD) shows that the iron contamination, associated with the galvanic contact, significantly improves the in-plane compatibility of ZnO with the Au and Ag cubic lattice. Photoluminescence (PL) measurements indicate that the contamination does not affect the number density of localized defects, but lowers their energy levels uniformly; differently, the band-edge emission is not altered appreciably. Finally, we have found that the ZnO hetero-nucleation by galvanic effect initiates at different times in different sites of the substrate area. Our results can be useful for the fabrication of high performance piezonanodevices comprising high-density metal-to-ZnO nanoscaled junctions without intermediate polycrystalline layers.

  16. Early silicification of leaves and roots of seedlings of a panicoid grass grown under different conditions: anatomical relations and structural role.

    PubMed

    Fernández Honaine, M; Benvenuto, M L; Borrelli, N L; Osterrieth, M

    2016-11-01

    Grasses accumulate high amounts of silica deposits in tissues of all their organs, especially at mature stage. However, when and under which conditions do grass seedlings begin to produce these silica deposits and their relation with anatomy and development is little known. Here we investigated the silicification process in the first leaves and roots of seedlings of Bothriochloa laguroides grown in different substrate and Si treatments. The distribution and content of silica deposits in the organs of the seedlings grown under different conditions were analyzed through staining techniques and SEM-EDAX analyses. Leaf silica deposits were accumulated 3-4 days after the first leaf emergence, also under low silica solution (0.17-0.2 mM). Their location was mainly restricted to short costal cells from basal sectors, and scarcely in trichomes and xylem at tips. Silica content in leaves increased with the age of the seedlings. Roots presented dome-shaped silica aggregates, between 4-12 μm of diameter, located in the inner tangential wall of endodermal cells and similar to those produced at maturity. Silicification begins early in the first photosynthetic leaf, and silica distribution is opposite to that found in mature plants, mainly restricted to basal sectors, probably acting as a reinforcing element. The fast incorporation of solid amorphous silica in leaves and roots, may be useful for farm applications in species that are Si-fertilized.

  17. Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone.

    PubMed

    Jin, Chunyan; Liu, Ben; Lei, Zhongxiang; Sun, Jiaming

    2015-01-01

    TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti(3+) ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.

  18. Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael; Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Spry, David J.

    2014-01-01

    The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions

  19. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

    NASA Astrophysics Data System (ADS)

    Ayari, Taha; Sundaram, Suresh; Li, Xin; El Gmili, Youssef; Voss, Paul L.; Salvestrini, Jean Paul; Ougazzaden, Abdallah

    2016-04-01

    Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.

  20. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

    PubMed

    Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

    2017-12-01

    La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La2O3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La2O3. Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La2O3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

  1. Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

    SciTech Connect

    Coulon, P. M.; Mexis, M.; Teisseire, M.; Vennéguès, P.; Leroux, M.; Zuniga-Perez, J.; Jublot, M.

    2014-04-21

    Self-assembled catalyst-free GaN micropillars grown on (0001) sapphire substrates by metal organic vapor phase epitaxy are investigated. Transmission electron microscopy, as well as KOH etching, shows the systematic presence of two domains of opposite polarity within each single micropillar. The analysis of the initial growth stages indicates that such double polarity originates at the micropillar/substrate interface, i.e., during the micropillar nucleation, and it propagates along the micropillar. Furthermore, dislocations are also generated at the wire/substrate interface, but bend after several hundreds of nanometers. This leads to micropillars several tens of micrometers in length that are dislocation-free. Spatially resolved cathodoluminescence and microphotoluminescence show large differences in the optical properties of each polarity domain, suggesting unequal impurity/dopant/vacancy incorporation depending on the polarity.

  2. Memory characteristics of metal-oxide-semiconductor structures based on Ge nanoclusters-embedded GeO(x) films grown at low temperature.

    PubMed

    Lin, Tzu-Shun; Lou, Li-Ren; Lee, Ching-Ting; Tsai, Tai-Cheng

    2012-03-01

    The memory devices constructed from the Ge-nanoclusters embedded GeO(x) layer deposited by the laser-assisted chemical vapor deposition (LACVD) system were fabricated. The Ge nanoclusters were observed by a high-resolution transmission electron microscopy. Using the capacitance versus voltage (C-V) and the conductance versus voltage (G-V) characteristics measured under various frequencies, the memory effect observed in the C-V curves was dominantly attributed to the charge storage in the Ge nanoclusters. Furthermore, the defects existed in the deposited film and the interface states were insignificant to the memory performances. Capacitance versus time (C-t) measurement was also executed to evaluate the charge retention characteristics. The charge storage and retention behaviors of the devices demonstrated that the Ge nanoclusters grown by the LACVD system at low temperature are promising for memory device applications.

  3. Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hashizume, Tamotsu; Alekseev, Egor; Pavlidis, Dimitris; Boutros, Karim S.; Redwing, Joan

    2000-08-01

    Electrical characterization of AlN/GaN interfaces was carried out by the capacitance-voltage (C-V) technique in materials grown by metalorganic chemical vapor deposition. The high-frequency C-V characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C2 plots under the deep depletion condition agreed well with the growth design parameters. A low value of interface state density Dit of 1×1011cm-2 eV-1 or less around the energy position of Ec-0.8 eV was demonstrated, in agreement with an average Dit value estimated from photoassisted C-V characteristics.

  4. Graphic Grown Up

    ERIC Educational Resources Information Center

    Kim, Ann

    2009-01-01

    It's no secret that children and YAs are clued in to graphic novels (GNs) and that comics-loving adults are positively giddy that this format is getting the recognition it deserves. Still, there is a whole swath of library card-carrying grown-up readers out there with no idea where to start. Splashy movies such as "300" and "Spider-Man" and their…

  5. Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial grown GaAs/AlGaAs modulation-doped quantum-well structures

    NASA Technical Reports Server (NTRS)

    Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A. R.; Eastman, L. F.

    1987-01-01

    The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.

  6. Structural, thermal, laser damage, photoconductivity, NLO and mechanical properties of modified vertical Bridgman method grown AgGa0.5In0.5Se2 single crystal

    NASA Astrophysics Data System (ADS)

    Vijayakumar, P.; Ramasamy, P.

    2016-08-01

    AgGa0.5In0.5Se2 single crystal was grown using modified vertical Bridgman method. The structural perfection of the AgGa0.5In0.5Se2 single crystal has been analyzed by high-resolution X-ray diffraction rocking curve measurements. The structural and compositional uniformities of AgGa0.5In0.5Se2 were studied using Raman scattering spectroscopy at room temperature. The FWHM of the Γ1 (W1) and Γ5L (Γ15) measured at different regions of the crystal confirms that the composition throughout its length is fairly uniform. Thermal properties of the as-grown crystal, including specific heat, thermal diffusivity and thermal conductivity have been investigated. The multiple shot surface laser damage threshold value was measured using Nd:YAG laser. Photoconductivity measurements with different temperatures have confirmed the positive photoconducting behavior. Second harmonic generation (SHG) on powder samples has been measured using the Kurtz and Perry technique and the results display that AgGa0.5In0.5Se2 is a phase-matchable NLO material. The hardness behavior has been measured using Vickers micro hardness measurement and the indentation size effect has been observed. The classical Meyer's law, propositional resistance model and modified propositional resistance model have been used to analyse the micro hardness behavior.

  7. Mechanisms of the micro-crack generation in an ultra-thin AlN/GaN superlattice structure grown on Si(110) substrates by metalorganic chemical vapor deposition

    SciTech Connect

    Shen, X. Q. Takahashi, T.; Ide, T.; Shimizu, M.

    2015-09-28

    We investigate the generation mechanisms of micro-cracks (MCs) in an ultra-thin AlN/GaN superlattice (SL) structure grown on Si(110) substrates by metalorganic chemical vapor deposition. The SL is intended to be used as an interlayer (IL) for relaxing tensile stress and obtaining high-quality crack-free GaN grown on Si substrates. It is found that the MCs can be generated by two different mechanisms, where large mismatches of the lattice constant (LC) and the coefficient of thermal expansion (CTE) play key roles in the issue. Different MC configurations (low-density and high-density MCs) are observed, which are considered to be formed during the different growth stages (SL growth and cooling down processes) due to the LC and the CTE effects. In-situ and ex-situ experimental results support the mechanism interpretations of the MCs generation. The mechanism understanding makes it possible to optimize the SL IL structure for growing high-quality crack-free GaN films on Si substrates for optical and electronic device applications.

  8. Structure and properties of Bi(Zn0.5Ti0.5)O3- Pb(Zr(1-x)Ti(x))O3 ferroelectric single crystals grown by a top-seeded solution growth technique.

    PubMed

    Wang, Bixia; Wu, Xiaoqing; Ren, Wei; Ye, Zuo-Guang

    2015-06-01

    Bi(Zn0.5Ti0.5)O3 (BZT)-modified Pb(Zr(1-x)Ti(x))O3 (PZT) single crystals have been grown using a top-seeded solution growth technique and characterized by various methods. The crystal structure is found to be rhombohedral by means of X-ray powder diffraction. The composition and homogeneity of the as-grown single crystals are studied by laser ablation inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The domain structure of a (001)(cub) platelet is investigated by polarized light microscopy (PLM), which confirms the rhombohedral symmetry. The paraelectric-to-ferroelectric phase transition temperature T(C) is found to be 313°C with the absence of rhombohedral-tetragonal phase transition. The ferroelectric properties of the ternary crystals are enhanced by the BZT substitution with a remanent polarization of 28 μC/cm(2) and a coercive field E(C) of 22.1 kV/cm.

  9. Characterization of graded interface In(x)Ga(1-x)As/In(0.52)Al(0.48)As (x between 0.53 and 0.70) structures grown by molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Peng, C. K.; Sinha, S.; Morkoc, H.

    1987-01-01

    Modulation-doped In(x)Ga(1-x)As/In(0.52)Al(0.48)As/InP structures were grown by molecular-beam epitaxy with x values between 53 and 70 percent. For pseudomorphic cases, graded instead of abrupt interfaces were used. Hall mobility and persistent photoconductivity measurements as a function of temperature were used to characterize samples with different structural parameters. Consistent trends in the variation of mobilities and two-dimensional carrier concentration, n(2D), under light and dark conditions have been observed and discussed in terms of applicable scattering mechanisms. The Hall mobilities are comparable to the best results obtained to date but with significantly higher n(2D) concentration.

  10. Molecule diagram from earth-grown crystals

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Like many chemicals in the body, the three-dimensional structure of insulin is extremely complex. When grown on the ground, insulin crystals do not grow as large or as ordered as researchers desire--obscuring the blueprint of the insulin molecules.

  11. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates.

    PubMed

    Gas, Katarzyna; Sadowski, Janusz; Kasama, Takeshi; Siusys, Aloyzas; Zaleszczyk, Wojciech; Wojciechowski, Tomasz; Morhange, Jean-François; Altintaş, Abdulmenaf; Xu, H Q; Szuszkiewicz, Wojciech

    2013-08-21

    Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn(2+) acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.

  12. Structural and waveguiding characteristics of Er3+:Yb3Al5-yGayO12 films grown by the liquid phase epitaxy

    NASA Astrophysics Data System (ADS)

    Hlásek, T.; Rubešová, K.; Jakeš, V.; Nekvindová, P.; Kučera, M.; Daniš, S.; Veis, M.; Havránek, V.

    2015-11-01

    Erbium (Er3+) doped ytterbium garnet (Er:Yb3Al5-yGayO12; y = 0, 0.55 and 1.1) single crystalline thick films have been grown by the low-temperature liquid phase epitaxy method (LPE). The composition of the films was determined using the high resolution XRD, the particle-induced X-ray emission spectroscopy (PIXE) and the particle-induced gamma-ray emission spectroscopy (PIGE). The lattice mismatch between films and substrates was investigated by the high-resolution X-ray diffraction. The surface analysis was carried out by the atomic force microscopy (AFM). Pure infrared emission of Er3+ ions was observed in all films containing gallium. The characteristics such as refractive index, thickness and light propagation were studied by the m-line spectroscopy (MLS) using several wavelengths (633, 964, 1311 and 1552 nm). All samples, where y = 1.1, were multimode waveguides. For these reasons, the Er:Yb3Al3.9Ga1.1O12 seems to be a promising material for light amplifiers in the IR region.

  13. Ion implanted epitaxially grown ZnSe

    NASA Technical Reports Server (NTRS)

    1974-01-01

    The epitaxial growth of ZnSe on (100) Ge using the close-spaced transport process is described. Substrate temperature of 575 C and source temperatures of 675 C yield 10 micron, single crystal layers in 10 hours. The Ge substrates provides a nonreplenishable chemical transport agent and the epitaxial layer thickness is limited to approximately 10 microns. Grown epitaxial layers show excellent photoluminescence structure at 77 K. Grown layers exhibit high resistivity, and annealing in Zn vapor at 575 C reduces the resistivity to 10-100 ohms-cm. Zinc vapor annealing quenches the visible photoluminescence.

  14. The single crystal X-ray structure of β-hematin DMSO solvate grown in the presence of chloroquine, a β-hematin growth-rate inhibitor

    PubMed Central

    Gildenhuys, Johandie; le Roex, Tanya; Egan, Timothy J.; de Villiers, Katherine A.

    2012-01-01

    Single crystals of solvated β-hematin were grown from a DMSO solution containing the antimalarial drug chloroquine, a known inhibitor of β-hematin formation. In addition, a kinetics study employing biomimetic lipid-water emulsion conditions was undertaken to further investigate the effect of chloroquine and quinidine on the formation of β-hematin. Scanning electron microscopy shows that the external morphology of the β-hematin DMSO solvate crystals is almost indistinguishable from that of malaria pigment (hemozoin) and single crystal X-ray diffraction confirms the presence of μ-propionato coordination dimers of iron(III) protoporphyrin IX. The free propionic acid functional groups of adjacent dimers hydrogen bond to included DMSO molecules, rather than forming carboxylic acid dimers. The observed exponential kinetics were modeled using the Avrami equation, with an Avrami constant equal to 1. The decreased rate of β-hematin formation observed at low concentrations of both drugs could be accounted for by assuming a mechanism of drug adsorption to sites on the fastest growing face of β-hematin. This behavior was modeled using the Langmuir isotherm. Higher concentrations of drug resulted in decreased final yields of β-hematin, and an irreversible drug-induced precipitation of iron(III) protoporphyrin IX was postulated to account for this. The model permits determination of the equilibrium adsorption constant (Kads). The values for chloroquine (log Kads = 5.55 ± 0.03) and quinidine (log Kads = 4.92 ± 0.01) suggest that the approach may be useful as a relative probe of the mechanism of action of novel antimalarial compounds. PMID:23253048

  15. Anomalous Hall effect in epitaxially grown ferromagnetic FeGa/Fe3Ga hybrid structure: Evidence of spin carrier polarized by clusters

    NASA Astrophysics Data System (ADS)

    Duc Dung, Dang; Cho, Sunglae

    2013-05-01

    The anomalous Hall resistance relative with magnetic anisotropy of clusters Fe3Ga in Fe3Ga/Fe-Ga hybrid structural epitaxial was reported. The out-of-plane magnetic anisotropy was obtained for Fe3Ga/Fe-Ga hybrid structure, while in-plane magnetic anisotropy is shown in the single Fe-Ga phase epitaxial on GaAs(001). The observation of trend of saturation Hall resistance in Fe3Ga/Fe-Ga hybrid structural is compared with the Fe-Ga single crystal, which is solid evidence for spin polarization by local magnetic clusters.

  16. The structure of the glucuronoxylomannan produced by culinary-medicinal yellow brain mushroom (Tremella mesenterica Ritz.:Fr., Heterobasidiomycetes) grown as one cell biomass in submerged culture.

    PubMed

    Vinogradov, Evgeny; Petersen, Bent O; Duus, Jens Ø; Wasser, Solomon

    2004-06-01

    The yellow brain mushroom Tremella mesenterica possesses a wide spectrum of medicinal properties, including immunostimulating, protecting against radiation, antidiabetic, anti-inflammatory, hypocholesterolemic, hepatoprotective, and antiallergic effects. A unique feature of T. mesenterica is that most of the above mentioned medicinal properties depend on glucuronoxylomannan (GXM) contained in fruiting bodies or produced in pure culture conditions. We developed a new strain of T. mesenterica CBS 101939, which grows in submerged culture and offers superior yields of one-cell biomass rich in exocellular heteropolysaccharide GXM. The structure of the GXM was analyzed by NMR spectroscopy and chemical methods. The polysaccharide has a defined repeating unit structure, which is O-acetylated at several points: [structure: see text]. These results differ from previously published structure of Tremella extracellular polysaccharides, where mannan backbone was believed to be randomly glycosylated with xylan chains of different length.

  17. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo

    2016-07-01

    This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 108 cm-2 for GaN on bare sapphire to 4.9 × 108 cm-2 for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm2/Vs for GaN on bare sapphire to 199 cm2/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with a high crystalline quality.

  18. Growth conditions, structure, Raman characterization and optical properties of Sm-doped (LuxGd1-x)2SiO5 single crystals grown by the Czochralski method

    NASA Astrophysics Data System (ADS)

    GŁowacki, MichaŁ; Dominiak-Dzik, Grażyna; Ryba-Romanowski, Witold; Lisiecki, RadosŁaw; Strzęp, Adam; Runka, Tomasz; Drozdowski, MirosŁaw; Domukhovski, Viktor; Diduszko, Ryszard; Berkowski, Marek

    2012-02-01

    The (LuxGd0.995-xSm0.005)2SiO5 single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the Rietveld refinement of the collected X-ray powder spectra. The segregation features between Gd and Lu were estimated and analyzed. Vibrational properties of the solid solutions were analyzed on the basis of polarized Raman spectra acquired at 300-875 K temperature range. Absorption and emission spectra of Sm3+ ion in the crystals with different composition were analyzed in the terms of dopant energy levels, oscillator strengths of transitions and spectral features of luminescence bands in the visible range. Both structural and optical investigations revealed that change of Lu3+ content in (LuxGd0.995-xSm0.005)2SiO5 solid solution crystals induces the phase transition from C2/c (Lu2SiO5) to P21/c (Gd2SiO5) structure. It was found that the break of LSO to GSO-type structure occurs at 0.15

  19. Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate

    NASA Astrophysics Data System (ADS)

    Nakasu, Taizo; Kizu, Takeru; Yamashita, Sotaro; Aiba, Takayuki; Hattori, Shota; Sun, Wei-Che; Taguri, Kosuke; Kazami, Fukino; Hashimoto, Yuki; Ozaki, Shun; Kobayashi, Masakazu; Asahi, Toshiaki

    2016-04-01

    ZnTe/sapphire heterostructures were focused, and ZnTe thin films were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. A sapphire substrate possessing an atomically-smooth step-terrace structure was used to improve the crystallinity and morphology of the produced ZnTe film. The growth mode of the ZnTe thin film on a sapphire substrate with an atomically-smooth step-terrace structure was found to shift to a two-dimensional growth mode, and a ZnTe thin film possessing a flat surface was obtained. The crystallographic properties of the ZnTe film suggested that the resulting layer consisted of a single (111)-oriented domain. The photoluminescence property was also improved, and the interface lattice alignment between the ZnTe and sapphire was also affected by the atomically-smooth step-terrace structure.

  20. Structural optical and electronic properties of Fe and Ga doped ZnO thin films grown using pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Singh, Karmvir; Shukla, D. K.; Majid, S.; Dhar, R.; Choudhary, R. J.; Phase, D. M.

    2016-10-01

    Band gap engineering in ZnO thin films have been subject of intensive studies. The thin films of 2 wt % Fe and 2 wt % Ga doped ZnO and undoped ZnO were deposited on glass substrate by pulse laser deposition technique. Structural, optical and electronic structure properties of these thin films were investigated by X- Ray diffraction (XRD), UV-Vis spectroscopy and X-ray absorption spectroscopy (XAS), respectively. XRD studies show that all the thin films are highly oriented along the c-axis and maintain the wurtzite structure. Out of plane lattice parameter in Ga doped is smaller while in Fe doped is larger, compared to undoped ZnO. The band gaps of doped films have been found to increase due to doping of the Ga and Fe ions. XAS studies across O K edges of doped thin films show that the conduction band edge structure probed via oxygen 1s to 2p transitions have modified significantly in Ga doped sample.

  1. Strain-dependence Of The Structure And Ferroic Properties Of Epitaxial NiTiO3 Thin Films Grown On Different Substrates

    SciTech Connect

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Kovarik, Libor; Hu, Dehong; Chambers, Scott A.

    2015-08-14

    Polarization-induced weak ferromagnetism has been predicted a few years back in perovskite MTiO3 (M = Fe, Mn, Ni) [Fennie, Phys. Rev. Lett. 100, 167203 (2008)]. We set out to stabilize this metastable perovskite structure by growing NiTiO3 epitaxially on different substrates, and to investigate the dependence of polar and magnetic properties on strain. Epitaxial NiTiO3 films were deposited on Al2O3, Fe2O3, and LiNbO3 substrates by pulsed laser deposition, and characterized using several techniques. The effect of substrate choice on lattice strain, film structure, and physical properties was investigated. Our structural data from x-ray diffraction and electron microscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the weak ferromagnetism and lattice polarization on strain, and highlight our ability to control the ferroic properties in NiTiO3 thin films by the choice of substrate. Our results are also consistent with the theoretical prediction that the ferromagnetism in acentric NiTiO3 is polarization-induced. From the substrates studied here, the perovskite substrate LiNbO3 proved to be the most promising one for strong multiferroism.

  2. Strain-Dependence of the Structure and Ferroic Properties of Epitaxial NiTiO 3 Thin Films Grown on Different Substrates

    DOE PAGES

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; ...

    2015-01-01

    Polarization-induced weak ferromagnetism has been predicted a few years back in perovskite MTiO 3 (M = Fe, Mn, and Ni). We set out to stabilize this metastable perovskite structure by growing NiTiO 3 epitaxially on different substrates and to investigate the dependence of polar and magnetic properties on strain. Epitaxial NiTiO 3 films were deposited on Al 2 O 3 , Fe 2 O 3 , and LiNbO 3 substrates by pulsed laser deposition and characterized using several techniques. The effect of substrate choice on lattice strain, film structure, and physical properties was investigated. Our structural data from X-raymore » diffraction and electron microscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the weak ferromagnetism and lattice polarization on strain and highlight our ability to control the ferroic properties in NiTiO 3 thin films by the choice of substrate. Our results are also consistent with the theoretical prediction that the ferromagnetism in acentric NiTiO 3 is polarization induced. From the substrates studied here, the perovskite substrate LiNbO 3 proved to be the most promising one for strong multiferroism.« less

  3. Strain-dependence Of The Structure And Ferroic Properties Of Epitaxial Ni-1 (-) Ti-x(1) (-) O-y(3) Thin Films Grown On Sapphire Substrates

    SciTech Connect

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Stephens, Sean A.; Manandhar, Sandeep; Shutthanandan, V.; Colby, Robert J.; Hu, Dehong; Shelton, William A.; Chambers, Scott A.

    2015-03-01

    Polarization-induced weak ferromagnetism has been predicted a few years back in perovskite MTiO3 (M = Fe, Mn, Ni) [Fennie, Phys. Rev. Lett. 100, 167203 (2008)]. We set out to stabilize this metastable perovskite structure by growing NiTiO3 epitaxially on sapphire Al2O3 (001) substrate, and to control the polar and magnetic properties via strain. Epitaxial Ni1-xTi1-yO3 films of different Ni/Ti ratios and thicknesses were deposited on Al2O3 substrates by pulsed laser deposition at different temperatures, and characterized using several techniques. The effect of film thickness, deposition temperature, and film stoichiometry on lattice strain, film structure, and physical properties was investigated. Our structural data from x-ray diffraction, electron microscopy, and x-ray absorption spectroscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the Néel transition and lattice polarization on strain, and highlight our ability to control the ferroic properties in NiTiO3 thin films by film stoichiometry and thickness.

  4. Thickness dependences of the structural optical, and electrical properties of Cu2 Se thin films grown by using DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ahn, Heejin; Um, Youngho

    2014-05-01

    The thickness dependences of the structural, optical, and electrical properties of p-type Cu2Se films have been investigated in the thickness range of 200-600 nm. X-ray diffraction analysis confirmed that a stoichiometric Cu2Se phase with a cubic structure was formed. From the Hall effect measurements, the electrical resistivity of the Cu2Se film showed a low resistivity of 4.21 × 10-5 Ω·cm. The optical band gap energy estimated from the optical transmittance measurements varied in the range from 2.01 to 2.41 eV at room temperature Moreover, the surface roughness of the film increased with increasing film thickness.

  5. Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy

    SciTech Connect

    Andreev, B. A.; Sobolev, N. A. Denisov, D. V.; Shek, E. I.

    2013-10-15

    The photoluminescence spectra of light-emitting structures based on silicon doped with erbium during the course of molecular-beam epitaxy at a temperature of 500 Degree-Sign C are studied at 4.2 K on being annealed at 800-900 Degree-Sign C. Three sets of lines belonging to the emitting centers of erbium in silicon with a low oxygen-impurity concentration are revealed.

  6. Different continuous cropping spans significantly affect microbial community membership and structure in a vanilla-grown soil as revealed by deep pyrosequencing.

    PubMed

    Xiong, Wu; Zhao, Qingyun; Zhao, Jun; Xun, Weibing; Li, Rong; Zhang, Ruifu; Wu, Huasong; Shen, Qirong

    2015-07-01

    In the present study, soil bacterial and fungal communities across vanilla continuous cropping time-series fields were assessed through deep pyrosequencing of 16S ribosomal RNA (rRNA) genes and internal transcribed spacer (ITS) regions. The results demonstrated that the long-term monoculture of vanilla significantly altered soil microbial communities. Soil fungal diversity index increased with consecutive cropping years, whereas soil bacterial diversity was relatively stable. Bray-Curtis dissimilarity cluster and UniFrac-weighted principal coordinate analysis (PCoA) revealed that monoculture time was the major determinant for fungal community structure, but not for bacterial community structure. The relative abundances (RAs) of the Firmicutes, Actinobacteria, Bacteroidetes, and Basidiomycota phyla were depleted along the years of vanilla monoculture. Pearson correlations at the phyla level demonstrated that Actinobacteria, Armatimonadetes, Bacteroidetes, Verrucomicrobia, and Firmicutes had significant negative correlations with vanilla disease index (DI), while no significant correlation for fungal phyla was observed. In addition, the amount of the pathogen Fusarium oxysporum accumulated with increasing years and was significantly positively correlated with vanilla DI. By contrast, the abundance of beneficial bacteria, including Bradyrhizobium and Bacillus, significantly decreased over time. In sum, soil weakness and vanilla stem wilt disease after long-term continuous cropping can be attributed to the alteration of the soil microbial community membership and structure, i.e., the reduction of the beneficial microbes and the accumulation of the fungal pathogen.

  7. Atomically-Resolved In-Situ Studies of Surface Structure Evolution of PLD-Grown La5/8Ca3/8MnO3 Thin Films

    NASA Astrophysics Data System (ADS)

    Tselev, Alexander; Vasudevan, Rama; Qiao, Liang; Biegalski, Michael; Baddorf, Arthur; Kalinin, Sergei

    2014-03-01

    Here, we report atomically resolved in-situ Scanning Tunneling Microscopy (STM) studies of La5/8Ca3/8MnO3 (LCMO) thin films grown by RHEED-assisted PLD. Films were grown on TiO2-terminated (001) SrTiO3 substrates at a substrate temperature of 750 °C and O2 pressure of 50 mTorr. In-situ UHV STM was performed at room temperature. LCMO is known to grow in layer-by layer (LBL) mode. We find that the initial growth does not follow the best physically possible LBL growth (with only three u.c. layers exposed). RHEED oscillations decay during deposition of the first 10-15th unit cells. Subsequently, the RHEED intensity oscillations grow and remain persistent. STM images of 16 u.c.-thick films revealed surfaces with up to five u.c. layers being exposed in a stepped island-like morphology with 1/2 u.c. step heights. Such morphology allowed studies of atomic surface structure of both terminations. 25 u.c.-thick samples were found to be almost single-terminated. The minor termination is ordered and exhibits (1x1) reconstructions; RHEED suggests that this termination is the La/Ca-O termination. A 250 u.c.-thick film was found to be single-terminated with only three u.c. layers exposed. This research was sponsored by DMSE (AT, RV, SVK) and by SUFD (LQ, MDB, APB) of BES, DOE. Research was conducted at the CNMS, which is sponsored at ORNL by SUFD, BES, DOE.

  8. Process modeling and analysis of structure and stoichiometry of magnesium oxide nano thin films grown by molecular beam epitaxy on 6 hydrogen-silicon carbide substrates

    NASA Astrophysics Data System (ADS)

    Uddin, Ghulam Moeen

    In recent years there has been an increasing interest in effective integration of nano scale functional oxides with semiconductors for third and fourth generation nano devices including high-K dielectrics based electronic devices and paradigm-shifting spintronics-based circuits. In this research we investigate the growth of MgO nano thin films on 6H-SiC substrate in a molecular beam epitaxy process. Here MgO serves as a template layer to minimize the mismatch with both substrate and a functional oxide films such as BTO and BaM. In this research we constructed neural network based process models using historical experimental data. Based on these process models we performed structural and stoichiometric analyses through both design of experiments and Monte Carlo simulation. We found that the percentage starting oxygen on the substrate is the most critical variable that promotes the undesired bonding states, i.e., Mg-OH and excessive strain in film crystalline structure. In addition the impact of percentage of starting oxygen on structure and stoichiometry is affected by the film thickness. The interaction between substrate temperature and oxygen on the starting substrate surface is the critical pair that affects the dynamics of Mg-OH bonding state. This study helped us analyze the process behavior and gain process knowledge to conduct systematic experimentation. After conducting the systematic experiments we quantitatively studied the causal relationship the undesired bonding states and the percentage starting oxygen at 3 levels of film thickness. Moreover, the cleaning of silicon carbide (6H-SiC) substrate surface is an essential and important step to grow MgO films with minimum undesired bonding states. We investigated high temperature hydrogen etching process to clean the substrate surface. In this research we studied the impact of cleaning time and cleaning temperature by analyzing the reflection high energy electron diffraction (RHEED) structural performance

  9. Isolation and structure determination of a benzofuran and a bis-nor-isoprenoid from Aspergillus niger grown on the water soluble fraction of Morinda citrifolia Linn. leaves.

    PubMed

    Siddiqui, Bina S; Ismail, Fouzia A Sattar; Gulzar, Tahsin; Begum, Sabira

    2003-10-01

    The leaves of Morinda citrifolia, Linn. afforded a new benzofuran and a bis-nor-isoprenoid, blumenol C, hitherto unreported from this source. The structures of these have been elucidated as 5-benzofuran carboxylic acid-6-formyl methyl ester (1) and 4-(3'(R)-hydroxybutyl)-3,5,5, trimethyl-cyclohex-2-en-1-one (2) respectively through spectroscopic studies. The NMR data (including 1D, 2D techniques) and stereochemistry at C-3' of Compound 2 is also being reported for the first time.

  10. Diversity and structure of landraces of Agave grown for spirits under traditional agriculture: A comparison with wild populations of A. angustifolia (Agavaceae) and commercial plantations of A. tequilana.

    PubMed

    Vargas-Ponce, Ofelia; Zizumbo-Villarreal, Daniel; Martínez-Castillo, Jaime; Coello-Coello, Julián; Colunga-Garcíamarín, Patricia

    2009-02-01

    Traditional farming communities frequently maintain high levels of agrobiodiversity, so understanding their agricultural practices is a priority for biodiversity conservation. The cultural origin of agave spirits (mezcals) from west-central Mexico is in the southern part of the state of Jalisco where traditional farmers cultivate more than 20 landraces of Agave angustifolia Haw. in agroecosystems that include in situ management of wild populations. These systems, rooted in a 9000-year-old tradition of using agaves as food in Mesoamerica, are endangered by the expansion of commercial monoculture plantations of the blue agave variety (A. tequilana Weber var. Azul), the only agave certified for sale as tequila, the best-known mezcal. Using intersimple sequence repeats and Bayesian estimators of diversity and structure, we found that A. angustifolia traditional landraces had a genetic diversity (H(BT) = 0.442) similar to its wild populations (H(BT) = 0.428) and a higher genetic structure ((B) = 0.405; (B) =0. 212). In contrast, the genetic diversity in the blue agave commercial system (H(B) = 0.118) was 73% lower. Changes to agave spirits certification laws to allow the conservation of current genetic, ecological and cultural diversity can play a key role in the preservation of the traditional agroecosystems.

  11. Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

    SciTech Connect

    Treu, J. E-mail: Gregor.Koblmueller@wsi.tum.de; Speckbacher, M.; Saller, K.; Morkötter, S.; Xu, X.; Riedl, H.; Abstreiter, G.; Finley, J. J.; Koblmüller, G. E-mail: Gregor.Koblmueller@wsi.tum.de; Döblinger, M.

    2016-02-01

    We delineate the optimized growth parameter space for high-uniformity catalyst-free InGaAs nanowire (NW) arrays on Si over nearly the entire alloy compositional range using selective area molecular beam epitaxy. Under the required high group-V fluxes and V/III ratios, the respective growth windows shift to higher growth temperatures as the Ga-content x(Ga) is tuned from In-rich to Ga-rich InGaAs NWs. Using correlated x-ray diffraction, transmission electron microscopy, and micro-photoluminescence spectroscopy, we identify structural defects to govern luminescence linewidths in In-rich (x(Ga) < 0.4) and Ga-rich (x(Ga) > 0.6) NWs, whereas limitations at intermediate Ga-content (0.4 < x(Ga) < 0.6) are mainly due to compositional inhomogeneities. Most remarkably, the catalyst-free InGaAs NWs exhibit a characteristic transition in crystal structure from wurtzite to zincblende (ZB) dominated phase near x(Ga) ∼ 0.4 that is further reflected in a cross-over from blue-shifted to red-shifted photoluminescence emission relative to the band edge emission of the bulk ZB InGaAs phase.

  12. Structural and dielectric properties of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown by PLD

    SciTech Connect

    James, K. K.; Satish, B.; Jayaraj, M. K.

    2014-01-28

    Ferroelectric thin films of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) were deposited on Si/SiO{sub 2}/TiO{sub 2}/Pt (PtSi) substrate by pulsed laser deposition (PLD). Crystalline films with perovskite structure were obtained without post-deposition annealing. Phase purity of the deposited films was confirmed by x-ray diffraction. The lowest value of FWHM obtained for the film deposited at oxygen pressure 5.4×10{sup −4} mbar and substrate temperature 600°C, indicates the high crystallinity of the film. The room temperature dielectric constant at 100 kHz was 85. Butterfly loop, which is the characteristic of ferroelectric materials, was obtained in the regime of −4 to +4V. The leakage current density was nearly 9×10{sup −13} Acm{sup −2}.

  13. Electronic and crystalline structures of zero band-gap LuPdBi thin films grown epitaxially on MgO(100)

    SciTech Connect

    Shan, Rong; Ouardi, Siham; Fecher, Gerhard H.; ViolBarbosa, Carlos E.; Felser, Claudia; Gao, Li; Kellock, Andrew; Roche, Kevin P.; Samant, Mahesh G.; Parkin, Stuart S. P.; Ikenaga, Eiji

    2013-04-29

    Thin films of the proposed topological insulator LuPdBi-a Heusler compound with the C1{sub b} structure-were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi{sub 2} and Lu targets. Epitaxial growth of LuPdBi films was confirmed by X-ray diffraction and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, even though the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the LuPdBi films, observed by hard X-ray photoelectron spectroscopy, correspond very well with the ab initio-calculated density of states.

  14. Structural, magnetic and magnetodielectric properties of the Mn3O4 thin films epitaxially grown on SrTiO3 (001) substrates

    NASA Astrophysics Data System (ADS)

    Huang, Siyu; Wang, Yuhang; Wang, Zongchi; Zhao, Kehan; Shi, Xiaolan; Lai, Xubo; Zhang, Liuwan

    2015-06-01

    The (001)-orientated Mn3O4 thin films were fabricated on Nb-doped SrTiO3 (001) substrates by a pulsed laser deposition method, and the structural, magnetic, and magnetodielectric properties were investigated. We found that the as-prepared thin film is tetragonal with biaxial compressive strain in the film plane. The orientation relationship in the film plane is Mn3O4 [100] || SrTiO3 [110]. Compared with the single crystals, the paramagnetic-ferrimagnetic transition temperature TN is greatly increased due to the in-plane compressive strain. At TN, a sharp drop in the dielectric constant was observed. Under a magnetic field, the dielectric constant shows a negative field-direction dependent response around TN. Our experiments indicated the strong coupling between the strain, lattice, spin, and orbital degrees of freedom in the epitaxial Mn3O4 thin films.

  15. Preparation of regularly structured nanotubular TiO2 thin films on ITO and their modification with thin ALD-grown layers.

    PubMed

    Tupala, Jere; Kemell, Marianna; Härkönen, Emma; Ritala, Mikko; Leskelä, Markku

    2012-03-30

    Nanotubular titanium dioxide thin films were prepared by anodization of titanium metal films evaporated on indium tin oxide (ITO) coated glass. A facile method to enhance the adhesion of the titanium film to the ITO glass was developed. An optimum thickness of 550 nm for the evaporated titanium was found to keep the film adhered to ITO during the anodization. The films were further modified by growing amorphous titania, alumina and tantala thin films conformally in the nanotubes by atomic layer deposition (ALD). The optical, electrical and physical properties of the different structures were compared. It was shown that even 5 nm thin layers can modify the properties of the nanotubular titanium dioxide films.

  16. Preparation of regularly structured nanotubular TiO2 thin films on ITO and their modification with thin ALD-grown layers

    NASA Astrophysics Data System (ADS)

    Tupala, Jere; Kemell, Marianna; Härkönen, Emma; Ritala, Mikko; Leskelä, Markku

    2012-03-01

    Nanotubular titanium dioxide thin films were prepared by anodization of titanium metal films evaporated on indium tin oxide (ITO) coated glass. A facile method to enhance the adhesion of the titanium film to the ITO glass was developed. An optimum thickness of 550 nm for the evaporated titanium was found to keep the film adhered to ITO during the anodization. The films were further modified by growing amorphous titania, alumina and tantala thin films conformally in the nanotubes by atomic layer deposition (ALD). The optical, electrical and physical properties of the different structures were compared. It was shown that even 5 nm thin layers can modify the properties of the nanotubular titanium dioxide films.

  17. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Structural Feature and Solute Trapping of Rapidly Grown Ni3Sn Intermetallic Compound

    NASA Astrophysics Data System (ADS)

    Qin, Hai-Yan; Wang, Wei-Li; Wei, Bing-Bo

    2009-11-01

    The rapid dendritic growth of primary Ni3Sn phase in undercooled Ni-30.9%Sn-5%Ge alloy is investigated by using the glass fluxing technique. The dendritic growth velocity of Ni3Sn compound is measured as a function of undercooling, and a velocity of 2.47 m/s is achieved at the maximum undercooling of 251 K (0.17TL). The addition of the Ge element reduces its growth velocity as compared with the binary Ni75Sn25 alloy. During rapid solidification, the Ni3Sn compound behaves like a normal solid solution and it displays a morphological transition of “coarse dendrite-equiaxed grain-vermicular structure" with the increase of undercooling. Significant solute trapping of Ge atoms occurs in the whole undercooling range.

  18. Super-V-shaped structure on 3C-SiC grown on the C-face of 4H-SiC

    NASA Astrophysics Data System (ADS)

    Xin, Bin; Jia, Ren-Xu; Hu, Ji-Chao; Zhang, Yu-Ming

    2016-08-01

    We investigate a unique super-V-shaped structure (SVSS) on the C-face of 3C/4H-SiC heteroepitaxial films. Atomic force microscopy (AFM) and optical images reveal that two low protruding straight lines of an SVSS join at a common higher protruding point. Transmission electron microscopy images determine that the protruding point is induced by polycrystalline nucleation, and straight lines are found to be 3C crystals without any specific defects. High-resolution AFM reveals that the directions of the SVSSs are strongly related to step-flow. It is believed that the straight lines are caused by redundant adatoms gathering and crystallizing when they meet and deviate around the protruding point defect on their original migration path. The effects of step-flow and anti-step-flow in the formation of SVSSs are discussed.

  19. Structural and electronic properties of ZnO nanoparticles grown on p-Si and Al2O3 substrates by using spin coating and thermal treatment.

    PubMed

    No, Young Soo; Son, Dong Ick; Leem, Jae Hyeon; Kim, Su Youn; Oh, Do Hyun; Kim, Tae Whan

    2008-10-01

    ZnO nanoparticles were formed on p-Si and Al2O3 substrates by using spin coating and thermal treatment method. Scanning electron microscopy images and X-ray energy dispersive spectrometry profiles showed that ZnO nanoparticles were formed on p-Si and Al2O3 substrates. X-ray diffraction patterns showed that ZnO nanoparticles formed on the p-Si substrates had polycrystalline hexagonal wurtzite structures and that those formed on the Al2O3 substrates had a c-axis preferential orientation. X-ray photoelectron spectroscopy profiles showed that the O 1s and the Zn 2p peaks corresponding to the ZnO nanoparticles were observed.

  20. Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

    NASA Astrophysics Data System (ADS)

    Wong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi

    2012-08-01

    AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0 min to 30 min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current-voltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation.

  1. Structure and magnetism in strained Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy

    SciTech Connect

    Prestat, E.; Barski, A.; Bellet-Amalric, E.; Morel, R.; Tainoff, D.; Jain, A.; Porret, C.; Bayle-Guillemaud, P.; Jamet, M.; Jacquot, J.-F.

    2013-07-01

    In this letter, we study the structural and magnetic properties of Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy using X-ray diffraction, high resolution transmission electron microscopy, and superconducting quantum interference device. Like in Mn doped Ge films, Mn atoms diffuse during the growth and aggregate into vertically aligned Mn-rich nanocolumns of a few nanometers in diameter. Transmission electron microscopy observations in plane view clearly indicate that the Sn incorporation is not uniform with concentration in Mn rich vertical nanocolumns lower than the detection limit of electron energy loss spectroscopy. The matrix exhibits a GeSn solid solution while there is a Sn-rich GeSn shell around GeMn nanocolumns. The magnetization in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} layers is higher than in Ge{sub 1-x}Mn{sub x} films. This magnetic moment enhancement in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} is probably related to the modification of the electronic structure of Mn atoms in the nanocolumns by the Sn-rich shell, which is formed around the nanocolumns.

  2. Crystallographic tilt and in-plane anisotropies of an a-plane InGaN/GaN layered structure grown by MOCVD on r-plane sapphire using a ZnO buffer

    NASA Astrophysics Data System (ADS)

    Liu, H. F.; Liu, W.; Guo, S.; Chi, D. Z.

    2016-03-01

    High-resolution x-ray diffraction (HRXRD) was used to investigate the crystallographic tilts and structural anisotropies in epitaxial nonpolar a-plane InGaN/GaN grown by metal-organic chemical vapor deposition on r-plane sapphire using a ZnO buffer. The substrate had an unintentional miscut of 0.14° towards its [-4 2 2 3] axis. However, HRXRD revealed a tilt of 0.26° (0.20°) between the ZnO (GaN) (11-20) and the Al2O3 (1-102) atomic planes, with the (11-20) axis of ZnO (GaN) tilted towards its c-axis, which has a difference of 163° in azimuth from that of the substrate’s miscut. Excess broadenings in the GaN/ZnO (11-20) rocking curves (RCs) were observed along its c-axis. Specific analyses revealed that partial dislocations and anisotropic in-plane strains, rather than surface-related effects, wafer curvature or stacking faults, are the dominant factors for the structural anisotropy. The orientation of the partial dislocations is most likely affected by the miscut of the substrate, e.g. via tilting of the misfit dislocation gliding planes created during island coalescences. Their Burgers vector components in the growth direction, in turn, gave rise to crystallographic tilts in the same direction as that of the excess RC-broadenings.

  3. Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Schumann, T.; Dubslaff, M.; Oliveira, M. H., Jr.; Hanke, M.; Fromm, F.; Seyller, T.; Nemec, L.; Blum, V.; Scheffler, M.; Lopes, J. M. J.; Riechert, H.

    2013-12-01

    Growth of nanocrystalline graphene films on (6√3 × 6√3)R30°-reconstructed SiC surfaces was achieved by molecular beam epitaxy, enabling the investigation of quasi-homoepitaxial growth. The structural quality of the graphene films, which is investigated by Raman spectroscopy, increases with growth time. X-ray photoelectron spectroscopy proves that the SiC surface reconstruction persists throughout the growth process and that the synthesized films consist of sp2-bonded carbon. Interestingly, grazing incidence x-ray diffraction measurements show that the graphene domains possess one single in-plane orientation, are aligned to the substrate, and offer a noticeably contracted lattice parameter of 2.450 Å. We correlate this contraction with theoretically calculated reference values (all-electron density functional calculations based on the van der Waals corrected Perdew-Burke-Ernzerhof functional) for the lattice parameter contraction induced in ideal, free-standing graphene sheets by: substrate-induced buckling, the edges of limited-size flakes and typical point defects (monovacancies, divacancies, Stone-Wales defects).

  4. Structural, optical and transport studies of nanocomposite SnOx thin films grown by DC sputter deposition and post-annealing

    NASA Astrophysics Data System (ADS)

    Siva Kumar, V. V.; Kanjilal, D.

    2017-02-01

    In this paper, we report on the systematic variation in structural, optical and transport properties of SnOx films prepared by DC sputter deposition followed by post-deposition annealing in air for 15 min each, firstly at 200 °C, and subsequently at 250, 275 and 300 °C. The formation of Sn rich SnO crystalline phase with annealing at 200 °C, its increase with annealing at 250 °C due to oxidation of Sn, and its partial decomposition to amorphous SnO2 phase upon annealing at and above 275 °C, were identified by x-ray diffraction and Raman spectroscopy studies. The bandgap value was 2.63 eV for the film with highest SnO crystalline phase obtained with annealing at 250 °C, and it was higher at 2.67 eV and 2.71 eV for films subsequent annealed at 275 °C and 300 °C, respectively. The transmittance of the films in the 400–650 nm wavelength range increased from a minimum of 0.15 to a maximum of 0.82 upon increment in annealing temperature. Rutherford backscattering spectroscopy study revealed an increase of oxygen in the films with annealing. Transport measurements performed on the annealed films show that they exhibit n-type conductivity with resistivity in the 1.05  ‑  0.01  ×  10+1 Ω cm range and a very weak photo-response to visible light. Our results indicate the potential use of the n-type SnOx films as high-resistivity transparent (HRT) buffer layer in flexible solar cells.

  5. Li induced effects in the core level and π-band electronic structure of graphene grown on C-face SiC

    SciTech Connect

    Johansson, Leif I. Xia, Chao; Virojanadara, Chariya

    2015-11-15

    Studies of the effects induced in the electronic structure after Li deposition, and subsequent heating, on graphene samples prepared on C-face SiC are reported. The as prepared graphene samples are essentially undoped, but after Li deposition, the Dirac point shifts down to 1.2 eV below the Fermi level due to electron doping. The shape of the C 1s level also indicates a doping concentration of around 10{sup 14 }cm{sup −2} after Li deposition, when compared with recent calculated results of core level spectra of graphene. The C 1s, Si 2p, and Li 1s core level results show little intercalation directly after deposition but that most of the Li has intercalated after heating at 280 °C. Heating at higher temperatures leads to desorption of Li from the sample, and at 1030 °C, Li can no longer be detected on the sample. The single π-band observable from multilayer C-face graphene samples in conventional angle resolved photoelectron spectroscopy is reasonably sharp both on the initially prepared sample and after Li deposition. After heating at 280 °C, the π-band appears more diffuse and possibly split. The Dirac point becomes located at 0.4 eV below the Fermi level, which indicates occurrence of a significant reduction in the electron doping concentration. Constant energy photoelectron distribution patterns extracted from the as prepared graphene C-face sample and also after Li deposition and heating at 280 °C look very similar to earlier calculated distribution patterns for monolayer graphene.

  6. Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodes.

    PubMed

    Yoo, Yeon Woo; Jeon, Woojin; Lee, Woongkyu; An, Cheol Hyun; Kim, Seong Keun; Hwang, Cheol Seong

    2014-12-24

    The effects of Al doping in atomic-layer-deposited HfO2 (AHO) and ZrO2 (AZO) films on the evolutions of their crystallographic phases, grain sizes, and electric properties, such as their dielectric constants and leakage current densities, were examined for their applications in high-voltage devices. The film thickness and Al-doping concentration were varied in the ranges of 60-75 nm and 0.5-9.7%, respectively, for AHO and 55-90 nm and 1.0-10.3%, respectively, for AZO. The top and bottom electrodes were sputtered Mo films. The detailed structural and electrical property variations were examined as functions of the Al concentration and film thickness. The AHO films showed a transition from the monoclinic phase (Al concentration up to 1.4%) to the tetragonal/cubic phase (Al concentration 2.0-3.5%), and finally, to the amorphous phase (Al concentration >4.7%), whereas the AZO films remained in the tetragonal/cubic phase up to the Al concentration of 6.4%. For both the AHO and AZO films, the monoclinic and amorphous phases had dielectric constants of 20-25, and the tetragonal/cubic phases had dielectric constants of 30-35. The highest electrical performance levels for the application to the high-voltage charge storage capacitors in flat panel displays were achieved with the 4.7-9.7% Al-doped AHO films and the 2.6% Al-doped AZO films.

  7. Effects of Elevated Atmospheric CO2 on Microbial Community Structure at the Plant-Soil Interface of Young Beech Trees (Fagus sylvatica L.) Grown at Two Sites with Contrasting Climatic Conditions.

    PubMed

    Gschwendtner, Silvia; Leberecht, Martin; Engel, Marion; Kublik, Susanne; Dannenmann, Michael; Polle, Andrea; Schloter, Michael

    2015-05-01

    Soil microbial community responses to elevated atmospheric CO2 concentrations (eCO2) occur mainly indirectly via CO2-induced plant growth stimulation leading to quantitative as well as qualitative changes in rhizodeposition and plant litter. In order to gain insight into short-term, site-specific effects of eCO2 on the microbial community structure at the plant-soil interface, young beech trees (Fagus sylvatica L.) from two opposing mountainous slopes with contrasting climatic conditions were incubated under ambient (360 ppm) CO2 concentrations in a greenhouse. One week before harvest, half of the trees were incubated for 2 days under eCO2 (1,100 ppm) conditions. Shifts in the microbial community structure in the adhering soil as well as in the root rhizosphere complex (RRC) were investigated via TRFLP and 454 pyrosequencing based on 16S ribosomal RNA (rRNA) genes. Multivariate analysis of the community profiles showed clear changes of microbial community structure between plants grown under ambient and elevated CO2 mainly in RRC. Both TRFLP and 454 pyrosequencing showed a significant decrease in the microbial diversity and evenness as a response of CO2 enrichment. While Alphaproteobacteria dominated by Rhizobiales decreased at eCO2, Betaproteobacteria, mainly Burkholderiales, remained unaffected. In contrast, Gammaproteobacteria and Deltaproteobacteria, predominated by Pseudomonadales and Myxococcales, respectively, increased at eCO2. Members of the order Actinomycetales increased, whereas within the phylum Acidobacteria subgroup Gp1 decreased, and the subgroups Gp4 and Gp6 increased under atmospheric CO2 enrichment. Moreover, Planctomycetes and Firmicutes, mainly members of Bacilli, increased under eCO2. Overall, the effect intensity of eCO2 on soil microbial communities was dependent on the distance to the roots. This effect was consistent for all trees under investigation; a site-specific effect of eCO2 in response to the origin of the trees was not observed.

  8. Structure-property relationships in self-assembled metalorganic chemical vapor deposition-grown CoFe{sub 2}O{sub 4-}-PbTiO{sub 3} multiferroic nanocomposites using three-dimensional characterization.

    SciTech Connect

    Pan, M.; Liu, Y.; Bai, G.; Hong, S.; Dravid, V. P.; Petford-Long, A. K.

    2011-01-01

    Multiferroic nanocomposites, consisting of branched, ferrimagnetic CoFe{sub 2}O{sub 4} filaments and large protruding PbTiO{sub 3} particles embedded in a piezoelectric PbTiO{sub 3} matrix, have been fabricated by co-deposition using metalorganic chemical vapor deposition. Branched CoFe{sub 2}O{sub 4} filaments reduce the CoFe{sub 2}O{sub 4}/PbTiO{sub 3} interfacial strain and induce a perpendicular magnetic anisotropy. Three-dimensional characterizations reveal that in addition to the c-domain, grains with a second orientation in PbTiO{sub 3} particles contribute to an additional four apparent variants of polarization. In contrast, the PbTiO{sub 3} matrix exhibits only c-domain polarization with a smaller magnitude. The smaller piezoresponse results from the constraints imposed by the branched CoFe{sub 2}O{sub 4} filaments. Three-dimensional microstructure and property analysis provide a comprehensive insight on the structure-property relationship of multiferroic nanocomposites grown by metalorganic chemical vapor deposition.

  9. Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Ghazai, Alaa Jabbar; Hassan, Haslan Abu; Hassan, Zanuri Bint

    2016-07-01

    The objective of the current study is to characterize the optoelectronic properties of quaternary n-Al0.08In0.08Ga0.84N thin films grown via molecular beam epitaxy (MBE) on sapphire (Al2O3) and silicon (Si) substrates for different optoelectronic applications. Due to mismatch problems between the epilayer and substrates, the AlN buffer layer was inserted at low temperature to reduce the lattice mismatch to approximately 4% for the samples, to produce high-quality epitaxy films. Defect-free films with high structural, optical and electrical qualities were obtained. Their small full width at half maximum, low compressive strain, relatively large grain size and low dislocation density which produced smooth surfaces without any separation phases or cracks were characterized using X-ray diffraction analysis. Scanning electron microscopy, energy-dispersive X-ray microscopy and atomic force microscopy images confirmed these characterizations. Furthermore, high optical quality, as well as high absorption and absorption coefficients were observed using photoluminescence and UV-VIS spectroscopy; however, a red shift was observed in the PL peak of the near band edge of 3.158 eV of the sample on Si substrate compared with 3.37 eV for the sample on sapphire substrate which is attributed to the compressive strain and occurrence of the quantum confined Stark effect.

  10. Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich InxAl1-xN thin films grown by plasma-assisted dual source reactive evaporation

    NASA Astrophysics Data System (ADS)

    Alizadeh, M.; Ganesh, V.; Goh, B. T.; Dee, C. F.; Mohmad, A. R.; Rahman, S. A.

    2016-08-01

    In-rich InxAl1-xN thin films were deposited on quartz substrate at various nitrogen flow rates by plasma-assisted dual source reactive evaporation technique. The elemental composition, surface morphology, structural and optical properties of the films were investigated by X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray diffraction (XRD), UV-vis spectrophotometer and photoluminescence (PL) measurements. XPS results revealed that the indium composition (x) of the InxAl1-xN films increases from 0.90 to 0.97 as the nitrogen flow rate is increased from 40 to 100 sccm, respectively. FESEM images of the surface and cross-sectional microstructure of the InxAl1-xN films showed that by increasing the N2 flow rate, the grown particles are highly agglomerated. Raman and XRD results indicated that by increasing nitrogen flow rate the In-rich InxAl1-xN films tend to turn into amorphous state. It was found that band gap energy of the films are in the range of 0.90-1.17 eV which is desirable for the application of full spectra solar cells.

  11. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy

    SciTech Connect

    Wang, Juan; Xing, Jun-Liang; Xiang, Wei; Wang, Guo-Wei; Xu, Ying-Qiang; Ren, Zheng-Wei; Niu, Zhi-Chuan

    2014-02-03

    Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877 × 10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112 × 10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300 K to 77 K. This study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.

  12. Electronic structure of Co-induced magic clusters grown on Si(111)-(7×7) : Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

    NASA Astrophysics Data System (ADS)

    Zilani, M. A. K.; Xu, H.; Liu, T.; Sun, Y. Y.; Feng, Y. P.; Wang, X.-S.; Wee, A. T. S.

    2006-05-01

    The electronic structure of cobalt-induced magic clusters grown on Si(111)-(7×7) is investigated by scanning tunneling microscopy, scanning tunneling spectroscopy, and real-space multiple-scattering calculations. Topographical images of a half unit cell of Si(111)-(7×7) with the cluster acquired at low bias voltages of ±0.4V show greatly reduced cluster heights; however, the heights of the corner adatoms are unchanged, indicative of the highly localized nature of the charge distribution. Spectroscopic studies of the clusters indicate a band gap of ˜0.8eV , suggesting localized nonmetallic behavior. The opening of such a band gap is suggested to be a stabilizing factor for the observed magic clusters. A 65-atom Co-Si cluster is constructed to calculate the momentum- and element-projected density of states. The calculated result identifies that the intense state below the Fermi level at -1.75V in the experimental spectroscopic curve is primarily due to localized 3d orbitals of Co atoms in the magic clusters.

  13. Structural and band alignment properties of Al{sub 2}O{sub 3} on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

    SciTech Connect

    Hudait, M. K.; Zhu, Y.; Maurya, D.; Priya, S.; Patra, P. K.; Ma, A. W. K.; Aphale, A.; Macwan, I.

    2013-04-07

    Structural and band alignment properties of atomic layer Al{sub 2}O{sub 3} oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al{sub 2}O{sub 3} film and the Ge epilayer. The extracted valence band offset, {Delta}E{sub v}, values of Al{sub 2}O{sub 3} relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in {Delta}E{sub v} related to the crystallographic orientation were {Delta}E{sub V}(110)Ge>{Delta}E{sub V}(100)Ge{>=}{Delta}E{sub V}(111)Ge and the conduction band offset, {Delta}E{sub c}, related to the crystallographic orientation was {Delta}E{sub c}(111)Ge>{Delta}E{sub c}(110)Ge>{Delta}E{sub c}(100)Ge using the measured {Delta}E{sub v}, bandgap of Al{sub 2}O{sub 3} in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

  14. Protein Crystals Grown in Space

    NASA Technical Reports Server (NTRS)

    2000-01-01

    A collage of protein and virus crystals, many of which were grown on the U.S. Space Shuttle or Russian Space Station, Mir. The crystals include the proteins canavalin; mouse monoclonal antibody; a sweet protein, thaumatin; and a fungal protease. Viruses are represented here by crystals of turnip yellow mosaic virus and satellite tobacco mosaic virus. The crystals are photographed under polarized light (thus causing the colors) and range in size from a few hundred microns in edge length up to more than a millimeter. All the crystals are grown from aqueous solutions and are useful for X-ray diffraction analysis. Credit: Dr. Alex McPherson, University of California, Irvine.

  15. Structure and superconductivity of (Li1-x Fe x )OHFeSe single crystals grown using A x Fe2-y Se2 (A  =  K, Rb, and Cs) as precursors.

    PubMed

    Yu, G; Zhang, G Y; Ryu, G H; Lin, C T

    2016-01-13

    We present results on the hydrothermal growth of ([Formula: see text])OHFeSe single crystals using floating-zone-grown [Formula: see text] (A  =  K, Rb, and Cs) as precursors. The growth proceeds by the hydrothermal ion exchange of Li/Fe-O-H for K, Rb, and Cs, resulting in a stacking layer of ([Formula: see text])OH sandwiched between the FeSe layers. Optimal growth parameters are achieved using high quality A 0.80Fe1.81Se2 single crystals added to the mixtures of LiOH, H2O, Fe and C(NH2)2Se in an autoclave and subsequently heated to 120 °C for 2 d, to obtain highest quality single crystals. The obtained crystals have lateral dimensions up to centimeters, with the final size related to that of the precursor crystal used. All ([Formula: see text])OHFeSe single crystals show a superconducting transition temperature T c  >  42 K, regardless of the phase of the precursor such as superconducting K0.80Fe1.81Se2 (T c  =  29.31 K) or non-superconducting Rb0.80Fe1.81Se2 or poor-superconducting Cs0.80Fe1.81Se2 (T c  =  28.67 K). The T c and transition width ΔT vary in the obtained single crystals, due to the inhomogeneity of the ionic exchange. X-ray diffraction analysis demonstrates that the 245 insulating phase is absent in the ion-exchanged single crystals, while it is observed in the [Formula: see text] precursors. Comparative studies of the structure, magnetization, and superconductivity on the parent A 0.80Fe1.81Se2 and the ion-exchanged ([Formula: see text])OHFeSe crystals are discussed. A phase diagram including antiferromagnetic spin density wave and superconducting phases is also proposed.

  16. A comprehensive study of ferromagnetic resonance and structural properties of iron-rich nickel ferrite (NixFe3-xO4, x≤1) films grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Pachauri, Neha; Khodadadi, Behrouz; Singh, Amit V.; Mohammadi, Jamileh Beik; Martens, Richard L.; LeClair, Patrick R.; Mewes, Claudia; Mewes, Tim; Gupta, Arunava

    2016-11-01

    We report a detailed study of the structural and ferromagnetic resonance properties of spinel nickel ferrite (NFO) films, grown on (100)-oriented cubic MgAl2O4 substrates by direct liquid injection chemical vapor deposition (DLI-CVD) technique. Three different compositions of NFO films (NixFe3-xO4 where x=1, 0.8, 0.6) deposited at optimized growth temperature of 600 °C are characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Vibrating Sample Magnetometry (VSM), and broadband ferromagnetic resonance (FMR) techniques. XRD confirms the growth of epitaxial, single crystalline NixFe3-xO4 films. The out-of-plane lattice constant (c) obtained for Ni0.8Fe2.2O4 film is slightly higher than the bulk value (0.833 nm), indicating only partial strain relaxation whereas for the other two compositions (x=1 and x=0.6) films exhibit complete relaxation. The in-plane and out-of-plane FMR linewidths measurements at 10 GHz give the lowest values of 458 Oe and 98 Oe, respectively, for Ni0.8Fe2.2O4 film as compared to the other two compositions. A comprehensive frequency (5-40 GHz) and temperature (10-300 K) dependent FMR study of the Ni0.8Fe2.2O4 sample for both in-lane and out-of-plane configurations reveals two magnon scattering (TMS) as the dominant in-plane relaxation mechanism. It is observed that the TMS contribution to the FMR linewidth scales with the saturation magnetization Ms. In-plane angle-dependent FMR measurements performed on the same sample show that the ferromagnetic resonance field (Hres) and the FMR linewidth (ΔH) have a four-fold symmetry that is consistent with the crystal symmetry of the spinel. SEM measurements show formation of pyramid-like microstructures at the surface of the Ni0.8Fe2.2O4 sample, which can explain the observed four-fold symmetry of the FMR linewidth.

  17. Tissue grown in space in NASA Bioreactor

    NASA Technical Reports Server (NTRS)

    1998-01-01

    Dr. Lisa E. Freed of the Massachusetts Institute of Technology and her colleagues have reported that initially disc-like specimens of cartilage tend to become spherical in space, demonstrating that tissues can grow and differentiate into distinct structures in microgravity. The Mir Increment 3 (Sept. 16, 1996 - Jan. 22, 1997) samples were smaller, more spherical, and mechanically weaker than Earth-grown control samples. These results demonstrate the feasibility of microgravity tissue engineering and may have implications for long human space voyages and for treating musculoskeletal disorders on earth. Constructs grown on Mir (A) tended to become more spherical, whereas those grown on Earth (B) maintained their initial disc shape. These findings might be related to differences in cultivation conditions, i.e., videotapes showed that constructs floated freely in microgravity but settled and collided with the rotating vessel wall at 1g (Earth's gravity). In particular, on Mir the constructs were exposed to uniform shear and mass transfer at all surfaces such that the tissue grew equally in all directions, whereas on Earth the settling of discoid constructs tended to align their flat circular areas perpendicular to the direction of motion, increasing shear and mass transfer circumferentially such that the tissue grew preferentially in the radial direction. A and B are full cross sections of constructs from Mir and Earth groups shown at 10-power. C and D are representative areas at the construct surfaces enlarged to 200-power. They are stained red with safranin-O. NASA-sponsored bioreactor research has been instrumental in helping scientists to better understand normal and cancerous tissue development. The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC). Photo credit: Proceedings of the National Academy of Sciences.

  18. Tissue grown in space in NASA Bioreactor

    NASA Technical Reports Server (NTRS)

    2001-01-01

    Dr. Lisa E. Freed of the Massachusetts Institute of Technology and her colleagues have reported that initially disc-like specimens tend to become spherical in space, demonstrating that tissues can grow and differentiate into distinct structures in microgravity. The Mir Increment 3 (Sept. 16, 1996 - Jan. 22, 1997) samples were smaller, more spherical, and mechanically weaker than Earth-grown control samples. These results demonstrate the feasibility of microgravity tissue engineering and may have implications for long human space voyages and for treating musculoskeletal disorders on earth. Final samples from Mir and Earth appeared histologically cartilaginous throughout their entire cross sections (5-8 mm thick), with the exception of fibrous outer capsules. Constructs grown on Earth (A) appeared to have a more organized extracellular matrix with more uniform collagen orientation as compared with constructs grown on Mir (B), but the average collagen fiber diameter was similar in the two groups (22 +- 2 nm) and comparable to that previously reported for developing articular cartilage. Randomly oriented collagen in Mir samples would be consistent with previous reports that microgravity disrupts fibrillogenesis. These are transmission electron micrographs of constructs from Mir (A) and Earth (B) groups at magnifications of x3,500 and x120,000 (Inset). The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC). NASA-sponsored bioreactor research has been instrumental in helping scientists to better understand normal and cancerous tissue development. In cooperation with the medical community, the bioreactor design is being used to prepare better models of human colon, prostate, breast and ovarian tumors. Credit: Proceedings of the National Academy of Sciences.

  19. Aeromonas salmonicida grown in vivo.

    PubMed Central

    Garduño, R A; Thornton, J C; Kay, W W

    1993-01-01

    The virulent fish pathogen Aeromonas salmonicida was rapidly killed in vivo when restricted inside a diffusion chamber implanted intraperitoneally in rainbow trout. After a period of regrowth, the survivors had acquired resistance to host-mediated bacteriolysis, phagocytosis, and oxidative killing, properties which were subsequently lost by growth in vitro. Resistance to bacteriolysis and phagocytosis was associated with a newly acquired capsular layer revealed by acidic polysaccharide staining and electron microscopy. This capsular layer shielded the underlying, regular surface array (S-layer) from immunogold labeling with a primary antibody to the S-layer protein. Resistance to oxidative killing was mediated by a mechanism not associated with the presence of the capsular layer. An attenuated vaccine strain of A. salmonicida grown in vivo failed to express the capsular layer. Consequently, the in vivo-grown cells of this attenuated strain remained as sensitive to bacteriolysis, and as avidly adherent to macrophages, as the in vitro-grown cells. The importance of these new virulence determinants and their relation to the known virulence factors of A. salmonicida are discussed. Images PMID:8359906

  20. Confocal Raman studies in determining crystalline nature of PECVD grown Si nanowires

    SciTech Connect

    Ahmed, Nafis; Bhargav, P. Balaji; Ramasamy, P.; Sivadasan, A. K.; Tyagi, A. K.; Dhara, S.; Amirthapandian, S.; Panigrahi, B. K.; Bhattacharya, S.

    2015-06-24

    Silicon nanowires of diameter ∼200 nm and length of 2-4 µm are grown in the plasma enhanced chemical vapour deposition technique using nanoclustered Au catalyst assisted vapour-liquid-solid process. The crystallinity in the as-grown and annealed samples is studied using confocal Raman spectroscopic studies. Amorphous phase is formed in the as-grown samples. Structural studies using high resolution transmission electron microscopy confirm the polycrystalline nature in the annealed sample.

  1. Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In{sub x}Al{sub 1−x}Sb continuously graded buffer

    SciTech Connect

    Shin, Sang Hoon; Song, Jin Dong; Lim, Ju Young; Koo, Hyun Cheol; Kim, Tae Geun

    2012-10-15

    High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm{sup 2}/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

  2. Magnetization dynamics of cobalt grown on graphene

    SciTech Connect

    Berger, A. J.; White, S. P.; Adur, R.; Pu, Y.; Hammel, P. C.; Amamou, W.; Kawakami, R. K.

    2014-05-07

    Ferromagnetic resonance (FMR) spin pumping is a rapidly growing field which has demonstrated promising results in a variety of material systems. This technique utilizes the resonant precession of magnetization in a ferromagnet to inject spin into an adjacent non-magnetic material. Spin pumping into graphene is attractive on account of its exceptional spin transport properties. This article reports on FMR characterization of cobalt grown on chemical vapor deposition graphene and examines the validity of linewidth broadening as an indicator of spin pumping. In comparison to cobalt samples without graphene, direct contact cobalt-on-graphene exhibits increased FMR linewidth—an often used signature of spin pumping. Similar results are obtained in Co/MgO/graphene structures, where a 1 nm MgO layer acts as a tunnel barrier. However, magnetometry, magnetic force microscopy, and Kerr microscopy measurements demonstrate increased magnetic disorder in cobalt grown on graphene, perhaps due to changes in the growth process and an increase in defects. This magnetic disorder may account for the observed linewidth enhancement due to effects such as two-magnon scattering or mosaicity. As such, it is not possible to conclude successful spin injection into graphene from FMR linewidth measurements alone.

  3. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

    NASA Astrophysics Data System (ADS)

    Wu, Yu-Xin; Zhu, Jian-Jun; Zhao, De-Gang; Liu, Zong-Shun; Jiang, De-Sheng; Zhang, Shu-Ming; Wang, Yu-Tian; Wang, Hui; Chen, Gui-Feng; Yang, Hui

    2009-10-01

    High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural properties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

  4. Perfect crystals grown from imperfect interfaces.

    PubMed

    Falub, Claudiu V; Meduňa, Mojmír; Chrastina, Daniel; Isa, Fabio; Marzegalli, Anna; Kreiliger, Thomas; Taboada, Alfonso G; Isella, Giovanni; Miglio, Leo; Dommann, Alex; von Känel, Hans

    2013-01-01

    The fabrication of advanced devices increasingly requires materials with different properties to be combined in the form of monolithic heterostructures. In practice this means growing epitaxial semiconductor layers on substrates often greatly differing in lattice parameters and thermal expansion coefficients. With increasing layer thickness the relaxation of misfit and thermal strains may cause dislocations, substrate bowing and even layer cracking. Minimizing these drawbacks is therefore essential for heterostructures based on thick layers to be of any use for device fabrication. Here we prove by scanning X-ray nanodiffraction that mismatched Ge crystals epitaxially grown on deeply patterned Si substrates evolve into perfect structures away from the heavily dislocated interface. We show that relaxing thermal and misfit strains result just in lattice bending and tiny crystal tilts. We may thus expect a new concept in which continuous layers are replaced by quasi-continuous crystal arrays to lead to dramatically improved physical properties.

  5. Perfect crystals grown from imperfect interfaces

    PubMed Central

    Falub, Claudiu V.; Meduňa, Mojmír; Chrastina, Daniel; Isa, Fabio; Marzegalli, Anna; Kreiliger, Thomas; Taboada, Alfonso G.; Isella, Giovanni; Miglio, Leo; Dommann, Alex; von Känel, Hans

    2013-01-01

    The fabrication of advanced devices increasingly requires materials with different properties to be combined in the form of monolithic heterostructures. In practice this means growing epitaxial semiconductor layers on substrates often greatly differing in lattice parameters and thermal expansion coefficients. With increasing layer thickness the relaxation of misfit and thermal strains may cause dislocations, substrate bowing and even layer cracking. Minimizing these drawbacks is therefore essential for heterostructures based on thick layers to be of any use for device fabrication. Here we prove by scanning X-ray nanodiffraction that mismatched Ge crystals epitaxially grown on deeply patterned Si substrates evolve into perfect structures away from the heavily dislocated interface. We show that relaxing thermal and misfit strains result just in lattice bending and tiny crystal tilts. We may thus expect a new concept in which continuous layers are replaced by quasi-continuous crystal arrays to lead to dramatically improved physical properties. PMID:23880632

  6. Electrochromic nanostructures grown on a silicon nanowire template.

    PubMed

    Kim, Yuna; Baek, Jehoon; Kim, Myoung-Ha; Choi, Heon-Jin; Kim, Eunkyoung

    2008-09-01

    Vertically grown Si nanowires were prepared as a nanotemplate for conducting polymers. Electrochromic (EC) PEDOT (poly(3,4-ethylenedioxythiophene)) layer was successfully grown on Si nanowires by electrochemical polymerization method to form PEDOT nanowires having average wall thickness of approximately 60 nm. As-prepared conductive nanowire electrode was applied to a low voltage working EC device by fabricating an all solid state EC device. The EC properties of the device were enhanced in the nanowire structure, showing reversible fast optical transition by applying +/-2 V. The response time (t(R)) of the EC device from the PEDOT grown on Si nanowires was approximately 0.7 s, which was much faster than that from PEDOT film coated on ITO glass electrochemically (t(R)=1.9 s).

  7. Degradation by Streptomyces viridosporus T7A of plant material grown under elevated CO2 conditions.

    PubMed

    Ball, A S

    1991-11-15

    The biodegradability of plant material derived from wheat grown under different concentrations of atmospheric CO2 was investigated using the lignocarbohydrate solubilising actinomycete, Streptomyces viridosporus. Growth of S. viridosporus and solubilisation of lignocarbohydrate were highest when wheat grown at ambient CO2 concentrations (350 ppm) was used as C-source. Growth of S. viridosporus and solubilisation were reduced when the plant material was derived from wheat grown at 645 ppm CO2. The results suggest that modifications in plant structure occur when wheat is grown under conditions of elevated atmospheric CO2 which make it more resistant to microbial digestion.

  8. Seedborne fungal contamination: consequences in space-grown wheat.

    PubMed

    Bishop, D L; Levine, H G; Kropp, B R; Anderson, A J

    1997-11-01

    Plants grown in microgravity are subject to many environmental stresses that may promote microbial growth and result in disease symptoms. Wheat (cv. Super Dwarf) recovered from an 8-day mission aboard a NASA (National Aeronautics and Space Administration) space shuttle showed disease symptoms, including girdling of leaf sheaths and chlorosis and necrosis of leaf and root tissues. A Neotyphodium species was isolated from the seed and leaf sheaths of symptomatic wheat used in the spaceflight mission. Certain isozymes of a peroxidase unique to extracts from the microgravity-grown plants were observed in extracts from earth-grown Neotyphodium-infected plants but were not present in noninfected wheat. The endophytic fungus was eliminated from the wheat seed by prolonged heat treatment at 50 degrees C followed by washes with water at 50 degrees C. Plants from wheat seed infected with the Neotyphodium endophyte were symptomless when grown under greenhouse conditions, whereas symptoms appeared after only 4 days of growth in closed containers. Disease spread from an infected plant to noninfected plants in closed containers. Dispersion via spores was found on asymptomatic plants at distances of 7 to 18 cm from infected plants. The size and shape of the conidia, mycelia, and phialide-bearing structures and the ability to grow rapidly on carbohydrates, especially xylose, resembled the characteristics of N. chilense, which is pathogenic on orchard grass, Doctylis glomerati. The Neotyphodium wheat isolate caused disease symptoms on other cereals (wheat cv. Malcolm, orchard grass, barley, and maize) grown in closed containers.

  9. Seedborne fungal contamination: consequences in space-grown wheat

    NASA Technical Reports Server (NTRS)

    Bishop, D. L.; Levine, H. G.; Kropp, B. R.; Anderson, A. J.; Hood, E. E. (Principal Investigator)

    1997-01-01

    Plants grown in microgravity are subject to many environmental stresses that may promote microbial growth and result in disease symptoms. Wheat (cv. Super Dwarf) recovered from an 8-day mission aboard a NASA (National Aeronautics and Space Administration) space shuttle showed disease symptoms, including girdling of leaf sheaths and chlorosis and necrosis of leaf and root tissues. A Neotyphodium species was isolated from the seed and leaf sheaths of symptomatic wheat used in the spaceflight mission. Certain isozymes of a peroxidase unique to extracts from the microgravity-grown plants were observed in extracts from earth-grown Neotyphodium-infected plants but were not present in noninfected wheat. The endophytic fungus was eliminated from the wheat seed by prolonged heat treatment at 50 degrees C followed by washes with water at 50 degrees C. Plants from wheat seed infected with the Neotyphodium endophyte were symptomless when grown under greenhouse conditions, whereas symptoms appeared after only 4 days of growth in closed containers. Disease spread from an infected plant to noninfected plants in closed containers. Dispersion via spores was found on asymptomatic plants at distances of 7 to 18 cm from infected plants. The size and shape of the conidia, mycelia, and phialide-bearing structures and the ability to grow rapidly on carbohydrates, especially xylose, resembled the characteristics of N. chilense, which is pathogenic on orchard grass, Doctylis glomerati. The Neotyphodium wheat isolate caused disease symptoms on other cereals (wheat cv. Malcolm, orchard grass, barley, and maize) grown in closed containers.

  10. High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

    NASA Astrophysics Data System (ADS)

    Shekari, L.; Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z.

    2012-12-01

    Nanowires (NWs) of GaN thin films were prepared on as-grown Si (1 1 1) and porous silicon (PS) substrates using thermal evaporation method. The film growth produced high-quality wurtzite GaN NWs. The size, morphology, and nanostructures of the crystals were investigated through scanning electron microscopy, high-resolution X-ray diffraction and photoluminescence spectroscopy. The NWs grown on porous silicon were thinner, longer and denser compared with those on as-grown Si. The energy band gap of the NWs grown on PS was larger than that of NWs on as-grown Si. This is due to the greater quantum confinement effects of the crystalline structure of the NWs grown on PS.

  11. Electronic and magnetic structure of epitaxial Fe3O4(001 ) /NiO heterostructures grown on MgO(001) and Nb-doped SrTiO3(001 )

    NASA Astrophysics Data System (ADS)

    Kuepper, K.; Kuschel, O.; Pathé, N.; Schemme, T.; Schmalhorst, J.; Thomas, A.; Arenholz, E.; Gorgoi, M.; Ovsyannikov, R.; Bartkowski, S.; Reiss, G.; Wollschläger, J.

    2016-07-01

    We study the underlying chemical, electronic, and magnetic properties of a number of magnetite-based thin films. The main focus is placed onto Fe3O4 (001)/NiO bilayers grown on MgO(001) and Nb-SrTiO3(001) substrates. We compare the results with those obtained on pure Fe3O4 (001) thin films. It is found that the magnetite layers are oxidized and Fe3 + dominates at the surfaces due to maghemite (γ -Fe2O3 ) formation, which decreases with increasing magnetite layer thickness. For layer thicknesses of around 20 nm and above, the cationic distribution is close to that of stoichiometric Fe3O4 . At the interface between NiO and Fe3O4 we find the Ni to be in a divalent valence state, with unambiguous spectral features in the Ni 2 p core level x-ray photoelectron spectra typical for NiO. The formation of a significant NiFe2O4 interlayer can be excluded by means of x-ray magnetic circular dichroism. Magneto-optical Kerr effect measurements reveal significant higher coercive fields compared to magnetite thin films grown on MgO(001), and an altered in-plane easy axis pointing in the <100 > direction. We discuss the spin magnetic moments of the magnetite layers and find that a thickness of 20 nm or above leads to spin magnetic moments close to that of bulk magnetite.

  12. Harvesting microalgae grown on wastewater.

    PubMed

    Udom, Innocent; Zaribaf, Behnaz H; Halfhide, Trina; Gillie, Benjamin; Dalrymple, Omatoyo; Zhang, Qiong; Ergas, Sarina J

    2013-07-01

    The costs and life cycle impacts of microalgae harvesting for biofuel production were investigated. Algae were grown in semi-continuous culture in pilot-scale photobioreactors under natural light with anaerobic digester centrate as the feed source. Algae suspensions were collected and the optimal coagulant dosages for metal salts (alum, ferric chloride), cationic polymer (Zetag 8819), anionic polymer (E-38) and natural coagulants (Moringa Oleifera and Opuntia ficus-indica cactus) were determined using jar tests. The relative dewaterability of the algae cake was estimated by centrifugation. Alum, ferric chloride and cationic polymer could all achieve >91% algae recovery at optimal dosages. Life cycle assessment (LCA) and cost analysis results revealed that cationic polymer had the lowest cost but the highest environmental impacts, while ferric chloride had the highest cost and lowest environmental impacts. Based on the LCA results, belt presses are the recommended algae dewatering technology prior to oil extraction.

  13. GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ihn, Soo-Ghang; Song, Jong-In; Kim, Young-Hun; Lee, Jeong Yong

    2006-07-01

    High-quality Au-catalyzed GaAs nanowires were grown on Si substrates by vapor-liquid-solid growth in a solid source molecular beam epitaxy system. X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy reveal that the GaAs nanowires were epitaxially grown on Si substrates with uniform diameters along the nanowires. While GaAs nanowires on Si(111) and (001) substrates were mainly grown along the ⟨111⟩ direction with zinc-blende and wurtzite structures, unusual GaAs nanowires grown along ⟨001⟩ with a pure zinc-blende structure were also observed. Strong photoluminescence was observed from GaAs nanowires grown on a Si(001) substrate at room temperature.

  14. van der Waals Heterostructures Grown by MBE

    NASA Astrophysics Data System (ADS)

    Hinkle, Christopher

    In this work, we demonstrate the high-quality MBE heterostructure growth of various layered 2D materials by van der Waals epitaxy (VDWE). The coupling of different types of van der Waals materials including transition metal dichalcogenide thin films (e.g., WSe2, WTe2, HfSe2) , insulating hexagonal boron nitride (h-BN), and topological insulators (e.g., Bi2Se3) allows for the fabrication of novel electronic devices that take advantage of unique quantum confinement and spin-based characteristics. The relaxed lattice-matching criteria of van der Waals epitaxy has allowed for high-quality heterostructure growth with atomically abrupt interfaces, allowing us to couple these materials based primarily on their band alignment and electronic properties. We will discuss the impact of sample preparation, surface reactivity, and lattice mismatch of various substrates (sapphire, graphene, TMDs, Bi2Se3) on the growth mode and quality of the films and will discuss our studies of substrate temperature and flux rates on the resultant growth and grain size. Structural and chemical characterization was conducted via reflection high energy electron diffraction (RHEED, X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning tunneling microscopy/spectroscopy (STM/S), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Experimentally determined band alignments have been determined and compared with first-principles calculations allowing the design of novel low-power logic and magnetic memory devices. Initial results from the electrical characterization of these grown thin films and some simple devices will also be presented. These VDWE grown layered 2D materials show significant potential for fabricating novel heterostructures with tunable band alignments and magnetic properties for a variety of nanoelectronic and optoelectronic applications.

  15. CdS and Cd-Free Buffer Layers on Solution Phase Grown Cu2ZnSn(SxSe1- x)4 :Band Alignments and Electronic Structure Determined with Femtosecond Ultraviolet Photoemission Spectroscopy

    SciTech Connect

    Haight, Richard; Barkhouse, Aaron; Wang, Wei; Yu, Luo; Shao, Xiaoyan; Mitzi, David; Hiroi, Homare; Sugimoto, Hiroki

    2013-12-02

    The heterojunctions formed between solution phase grown Cu2ZnSn(SxSe1- x)4(CZTS,Se) and a number of important buffer materials including CdS, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission spectroscopy (fs-UPS) and photovoltage spectroscopy. With this approach we extract the magnitude and direction of the CZTS,Se band bending, locate the Fermi level within the band gaps of absorber and buffer and measure the absorber/buffer band offsets under flatband conditions. We will also discuss two-color pump/probe experiments in which the band bending in the buffer layer can be independently determined. Finally, studies of the bare CZTS,Se surface will be discussed including our observation of mid-gap Fermi level pinning and its relation to Voc limitations and bulk defects.

  16. The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate

    NASA Astrophysics Data System (ADS)

    Shang, Lin; Zhai, Guangmei; Mei, Fuhong; Jia, Wei; Yu, Chunyan; Liu, Xuguang; Xu, Bingshe

    2016-05-01

    The role of nucleation layer thickness on the GaN crystal quality grown on cone-patterned sapphire substrate (PSS) was explored. The morphologies of epitaxial GaN at different growth stages were investigated by a series of growth interruption in detail. After 10- and 15-min three-dimensional growth, the nucleation sites are very important for the bulk GaN crystal quality. They have a close relationship with the nucleation layer thickness, as confirmed through the scanning electron microscope (SEM) analysis. Nucleation sites formed mainly on patterns are bad for bulk GaN crystal quality and nucleation sites formed mainly in the trenches of PSS mounds are good for bulk GaN crystal quality, as proved by X-ray diffraction analysis. Nucleation layer thickness can effectively control the nucleation sites and thus determine the crystal quality of bulk GaN.

  17. Characterization of sodium chloride crystals grown in microgravity

    NASA Astrophysics Data System (ADS)

    Fontana, Pietro; Schefer, Jürg; Pettit, Donald

    2011-06-01

    NaCl crystals grown by the evaporation of an aqueous salt solution in microgravity on the International Space Station (ISS) were characterized and compared to salt crystals grown on earth. NaCl crystallized as thin wafers in a supersaturated film of 200-700 μm thickness and 50 mm diameter, or as hopper cubes in 10 mm diameter supersaturated spheres. Neutron diffraction shows no change in crystal structure and in cell parameters compared to earth-grown crystals. However, the morphology can be different, frequently showing circular, disk-like shapes of single crystals with <1 1 1> perpendicular to the disks, an unusual morphology for salt crystals. In contrast to the growth on earth the lateral faces of the microgravity tabular hopper crystals are symmetrical because they are free floating during the crystallization process. Hopper cubes were produced without the need to suspend the growing crystals by an ongoing stirring. "Fleur de Sel" is shown as an example of two-dimensional growth of salt on earth and compared to the space grown crystals. It is shown that in microgravity conditions brine fluid inclusions form within the salt crystals.

  18. Structural and morphological characterization of flux grown YTa{sub 7}O{sub 19}, Nd:YTa{sub 7}O{sub 19}, Nd:LaTa{sub 7}O{sub 19} and NdTa{sub 7}O{sub 19} crystals

    SciTech Connect

    Cavalli, E.

    2009-05-06

    YTa{sub 7}O{sub 19} (YHT), Nd:YTa{sub 7}O{sub 19} (Nd:YHT), Nd:LaTa{sub 7}O{sub 19} (Nd:LHT) and NdTa{sub 7}O{sub 19} (NHT) single crystals have been grown by spontaneous nucleation from high-temperature solutions using K{sub 2}Mo{sub 3}O{sub 10}-B{sub 2}O{sub 3} as a flux and structurally characterized by X-ray diffraction techniques. The effect of the flux composition on the crystal morphology is discussed. The distribution of the Nd{sup 3+} ions in doped crystals has been investigated by electron microprobe analysis, evidencing non-uniform segregation coefficients. The Raman spectra of the investigated compounds are presented, and a reinterpretation of the fine structure present in the optical spectra is proposed in the light of the crystallographic information.

  19. Characterization of potassium bromide crystals grown in the aqueous solution of picric acid

    NASA Astrophysics Data System (ADS)

    Maheswari, J. Uma; Krishnan, C.; Kalyanaraman, S.; Selvarajan, P.

    2016-12-01

    Potassium bromide crystals were grown in the aqueous solution of picric acid by slow evaporation technique at room temperature. X-ray Diffraction (XRD) analysis ensures that the grown sample is in Fm3m space group and FCC structure. Energy Dispersive X-ray Spectroscopy (EDX) reveals the presence of elements in the title compound. UV-Vis-NIR spectrum reveals that the grown sample is a promising nonlinear optical (NLO) material. FTIR analysis confirms the functional groups present in the sample. The thermogravimetric (TG) and differential thermogravimetric (DTA) analyses ensure that the sample material is thermally stable up to 160 °C. The second harmonic efficiency of the sample is 1.3 times greater than that of standard KDP. The mechanical strength of the grown sample is estimated by Vickers microhardness tester. The electrical properties were investigated by impedance analysis and the results of various studies of the grown crystals are discussed.

  20. Structural and electronic properties of ultrathin FeSe films grown on Bi2Se3(0 0 0 1) studied by STM/STS

    NASA Astrophysics Data System (ADS)

    Singh, Udai Raj; Warmuth, Jonas; Markmann, Verena; Wiebe, Jens; Wiesendanger, Roland

    2017-01-01

    We report scanning tunnelling microscopy and spectroscopy (STM/STS) studies on one and two unit cell (UC) high FeSe thin films grown on Bi2Se3(0 0 0 1). In our thin films, we find the tetragonal phase of FeSe and dumb-bell shaped defects oriented along Se-Se bond directions. In addition, we observe striped moiré patterns with a periodicity of (7.3  ±  0.1) nm generated by the mismatch between the FeSe lattice and the Bi2Se3 lattice. We could not find any signature of a superconducting gap in the tunneling spectra measured on the surface of one and two UC thick islands of FeSe down to 6.5 K. The spectra rather show an asymmetric behavior across and a finite density of states at the Fermi level (E F) resembling those taken in the normal state of bulk FeSe.

  1. Influences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition

    SciTech Connect

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2015-03-28

    We report the influences of group-III source preflow, which were introduced prior to the growth of the low temperature GaN on the polarity, photoluminescence (PL), and crystallographic properties of GaN epilayers grown on nitridated c-plane sapphire substrates by metal-organic chemical vapor deposition. By studying the surface morphology evolutions under chemical etching in KOH, we found that with increasing the trimethyl-gallium (TMGa) preflow duration (t), the polarity of the GaN film can be changed from a complete N-polarity to a mixture of N- and Ga-polarity and further to a complete Ga-polarity. PL and high-resolution X-ray diffraction studies revealed that the impurity incorporation and the edge- and screw-type threading dislocations are strongly polarity dependent. A further study at the optimized t (i.e., 30 s for TMGa) shows that the polarity inversion of GaN can be realized not only by TMGa preflow but also by trimethyl-aluminium preflow and by trimethyl-indium preflow. A two-monolayer model was employed to explain the polarity inversion mechanism.

  2. Tissue grown in space in NASA Bioreactor

    NASA Technical Reports Server (NTRS)

    1998-01-01

    For 5 days on the STS-70 mission, a bioreactor cultivated human colon cancer cells, such as the culture section shown here, which grew to 30 times the volume of control specimens grown on Earth. This significant result was reproduced on STS-85 which grew mature structures that more closely match what are found in tumors in humans. The two white circles within the tumor are part of a plastic lattice that helped the cells associate. The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC). The NASA Bioreactor provides a low turbulence culture environment which promotes the formation of large, three-dimensional cell clusters. Due to their high level of cellular organization and specialization, samples constructed in the bioreactor more closely resemble the original tumor or tissue found in the body. NASA-sponsored bioreactor research has been instrumental in helping scientists to better understand normal and cancerous tissue development. In cooperation with the medical community, the bioreactor design is being used to prepare better models of human colon, prostate, breast and ovarian tumors. Cartilage, bone marrow, heart muscle, skeletal muscle, pancreatic islet cells, liver and kidney are just a few of the normal tissues being cultured in rotating bioreactors by investigators.

  3. Hierarchical Domain Structures in Relaxor 24Pb(In1/2Nb1/2)O3-46Pb(Mg1/3Nb2/3)O3-30PbTiO3 near a Morphotropic Phase Boundary Composition Grown by Bridgman Method

    NASA Astrophysics Data System (ADS)

    Yasuda, Naohiko; Fuwa, Tomohiro; Ohwa, Hidehiro; Tachi, Yoshihito; Yamashita, Yohachi; Fujita, Kazuhiko; Iwata, Makoto; Terauchi, Hikaru; Ishibashi, Yoshihiro

    2011-09-01

    The domain structures of the lead-based relaxor ferroelectric solid solution single crystal, 24Pb(In1/2Nb1/2)O3 (PIN)-46Pb(Mg1/3Nb2/3)O3 (PMN)-30PbTiO3 (PT), near a morphotropic phase boundary (MPB) composition grown by the Bridgeman method were studied by polarized light microscopy (PLM), piezoresponse force microscopy (PFM) and scanning electron microscopy (SEM). The change in domain structures with poling from rhombohedral spindlelike domains of 3-5 µm width to orthorhombic domains of ˜20 µm width with rectangular cells with a size of 3-5 µm, characterized with an antiferroelectic double hysteresis loop in the electric field-induced strain behavior, was found. Such domain structures were microscopically identified from SEM images as small circular tetragonal defects, planar monoclinic defects such as edge and screw dislocations with Burgers vector b along <110>cub and/or <100>cub directions and their agglomerate rectangular orthorhombic defects, also characterized by PFM. Hierarchical domain structures are discussed from the viewpoints of domain structures due to defects such as edge and screw dislocations originating in the chemical order region (COR) and the piezoelectric responses and dielectric properties.

  4. Structural and optical properties of AlxGa1-xN (0.33 ≤ x ≤ 0.79) layers on high-temperature AlN interlayer grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Xu, Qingjun; Liu, Bin; Zhang, Shiying; Tao, Tao; Dai, Jiangping; He, Guotang; Xie, Zili; Xiu, Xiangqian; Chen, Dunjun; Chen, Peng; Han, Ping; Zhang, Rong

    2017-01-01

    High-Al-content AlxGa1-xN films with x varying from 0.33 to 0.79 were grown on GaN templates with the high temperature AlN (HT-AlN) interlayer by metal organic chemical vapor deposition (MOCVD). The best crystalline quality, among these AlxGa1-xN alloys, can be obtained for an AlN mole fraction x = 0.55, where the full-width at half-maximum of the Al0.55Ga0.45N (0002) diffraction peak was measured to be 259 arcsec by high resolution X-ray diffraction (HRXRD). The screw threading dislocation (TDs) density was 2 × 108 cm-2 evaluated by transmission electron microscope (TEM), which agreed with the calculations from Williamson-Hall plots. Moreover, cross-sectional TEM indicated that the HT-AlN interlayer could sufficiently reduce the threading dislocations (TDs) through generation of V trenches in the HT-AlN interlayer, since the TDs propagated along the V trenches, then bent into basal planes and annihilated with other dislocations. The study of optical properties indicated that obvious S-shape of temperature dependence on emission energy was observed for Al0.55Ga0.45N layers, which was attributed to exciton localization with energy (Eloc) ∼14.95 meV at 10 K resulting from potential fluctuation and band tail states. The time-resolved photoluminescence (TRPL) curves showed a bi-exponential decay at low temperature. The fast decay time implied the presence of the localized excitons enhancing radiative recombination, while the quite slow one was due to the dominance of trapping mechanisms originating from cation vacancy complexes and the VIII-related complexes.

  5. Diffraction study of protein crystals grown in cryoloops and micromounts.

    PubMed

    Berger, Michael A; Decker, Johannes H; Mathews, Irimpan I

    2010-12-01

    Protein crystals are usually grown in hanging or sitting drops and generally get transferred to a loop or micromount for cryocooling and data collection. This paper describes a method for growing crystals on cryoloops for easier manipulation of the crystals for data collection. This study also investigates the steps for the automation of this process and describes the design of a new tray for the method. The diffraction patterns and the structures of three proteins grown by both the new method and the conventional hanging-drop method are compared. The new setup is optimized for the automation of the crystal mounting process. Researchers could prepare nanolitre drops under ordinary laboratory conditions by growing the crystals directly in loops or micromounts. As has been pointed out before, higher levels of supersaturation can be obtained in very small volumes, and the new method may help in the exploration of additional crystallization conditions.

  6. Columnar grown copper films on polyimides strained beyond 100%

    PubMed Central

    Sun, Jeong-Yun; Lee, Hae-Ryung; Hwan Oh, Kyu

    2015-01-01

    Many flexible electronic devices contain metal films on polymer substrates to satisfy requirements for both electrical conductivity and mechanical durability. Despite numerous trials to date, the stretchability of metal interconnects remains an issue. In this paper, we have demonstrated a stretchable metal interconnect through control of the texture of a copper film with columnar grown grains on a polyimide (PI) substrate. The columnar grown copper films (CGC films) were deposited by regulating radio frequency (RF) sputtering powers. CGC films were able to sustain their electrical conductivity at strains above 100%. Instead of ultimate electrical discontinuity by channel crack propagation, CGC films maintained their conductivity by forming ligament structures, or a ‘conductive net,’ through trapped micro-cracks. XRD, AFM and in situ SEM analysis were used to investigate these stretchable conductors. PMID:26337668

  7. Neural signal registration and analysis of axons grown in microchannels

    NASA Astrophysics Data System (ADS)

    Pigareva, Y.; Malishev, E.; Gladkov, A.; Kolpakov, V.; Bukatin, A.; Mukhina, I.; Kazantsev, V.; Pimashkin, A.

    2016-08-01

    Registration of neuronal bioelectrical signals remains one of the main physical tools to study fundamental mechanisms of signal processing in the brain. Neurons generate spiking patterns which propagate through complex map of neural network connectivity. Extracellular recording of isolated axons grown in microchannels provides amplification of the signal for detailed study of spike propagation. In this study we used neuronal hippocampal cultures grown in microfluidic devices combined with microelectrode arrays to investigate a changes of electrical activity during neural network development. We found that after 5 days in vitro after culture plating the spiking activity appears first in microchannels and on the next 2-3 days appears on the electrodes of overall neural network. We conclude that such approach provides a convenient method to study neural signal processing and functional structure development on a single cell and network level of the neuronal culture.

  8. Laser alexandrite crystals grown by horizontal oriented crystallization technique

    NASA Astrophysics Data System (ADS)

    Gurov, V. V.; Tsvetkov, E. G.; Yurkin, A. M.

    2008-05-01

    Comparative studies were performed for alexandrite crystals, Al 2BeO 4:Cr 3+, employed in solid state lasers and grown by the horizontal oriented crystallization (HOC) technique and alexandrite crystals grown by the Czochralski (Cz) method. It was shown that the structural quality and possibilities of generation of stimulated emission HOC-crystals are similar to Cz-crystals, whereas their damage threshold is about three times higher. The obtained results and considerably lower cost price of HOC-alexandrite crystals prove their advantageous application in powerful laser systems, which require large laser rods with a higher resistance to laser beam. It is emphasized that application of HOC technique is promising for growth of laser crystals of other high-temperature oxide compounds.

  9. Growth and characterization of hexamethylenetetramine crystals grown from solution

    NASA Astrophysics Data System (ADS)

    Babu, B.; Chandrasekaran, J.; Balaprabhakaran, S.

    2014-06-01

    Organic nonlinear optical single crystals of hexamethylenetetramine (HMT; 10 × 10 × 5 mm3) were prepared by crystallization from methanol solution. The grown crystals were subjected to various characterization techniques such as single crystal XRD, powder XRD, UV-Vis and electrical studies. Single crystal XRD analysis confirmed the crystalline structure of the grown crystals. Their crystalline nature was also confirmed by powder XRD technique. The optical transmittance property was identified from UV-Vis spectrum. Dielectric measurements were performed as a function of frequency at different temperatures. DC conductivity and photoconductivity studies were also carried out for the crystal. The powder second harmonic generation efficiency (SHG) of the crystal was measured using Nd:YAG laser and the efficiency was found to be two times greater than that of potassium dihydrogen phosphate (KDP).

  10. Phase composition, structure and properties of (ZrO2)1-x-y(Sc2O3)x(Y2O3)y solid solution crystals (x=0.08-0.11; y=0.01-0.02) grown by directional crystallization of the melt

    NASA Astrophysics Data System (ADS)

    Borik, M. A.; Bredikhin, S. I.; Bublik, V. T.; Kulebyakin, A. V.; Kuritsyna, I. E.; Lomonova, E. E.; Milovich, F. O.; Myzina, V. A.; Osiko, V. V.; Ryabochkina, P. A.; Seryakov, S. V.; Tabachkova, N. Yu.

    2017-01-01

    For the first time crystals of the (ZrO2)1-x-y(Sc2O3)x(Y2O3)y solid solutions (x=0.08-0.11; y=0.01-0.02) have been grown by directional melt crystallization. We have determined the range of melt compositions for which growth from the melt produces of the (ZrO2)1-x-y(Sc2O3)x(Y2O3)y solid solution single crystals. The single-phase optically transparent single crystals following composition were grown: (ZrO2)0.9(Sc2O3)0.08(Y2O3)0.02; (ZrO2)0.89(Sc2O3)0.09(Y2O3)0.02; (ZrO2)0.89(Sc2O3)0.10(Y2O3)0.01; (ZrO2)0.88(Sc2O3)0.10(Y2O3)0.02. Comprehensive study of the crystal structure by using XRD, transmission electron microscopy, and Raman spectroscopy revealed that the all single crystals, which is identified by XRD data as cubic one, in fact have t″ tetragonal structure, which forms by small displacement of oxygen ions along the c-axis. Data on the phase stability of the crystals during mechanical crushing were obtained. The electrical conductivity was measured as a function of temperature by electrochemical impedance spectroscopy. It is established that (ZrO2)0.89(Sc2O3)0.10(Y2O3)0.01 crystals have the highest conductivity (0.168 S/cm at 1173 K).

  11. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    SciTech Connect

    Ravikiran, L.; Radhakrishnan, K. Ng, G. I.; Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S.

    2015-06-28

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  12. Effect of Pulse Nanosecond Volume Discharge in Air at Atmospheric Pressure on Electrical Properties of Mis Structures Based on p-HgCdTe Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Grigor'ev, D. V.; Tarasenko, V. F.; Shulepov, M. A.

    2015-11-01

    The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density of positive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.

  13. Diamond films grown from fullerene precursors

    SciTech Connect

    Gruen, D.M.; Zuiker, C.D.; Krauss, A.R.

    1995-07-01

    Fullerene precursors have been shown to result in the growth of diamond films from argon microwave plasmas. In contradistinction to most diamond films grown using conventional methane-hydrogen mixtures, the fullerene-generated films are nanocrystalline and smooth on the nanometer scale. They have recently been shown to have friction coefficients approaching the values of natural diamond. It is clearly important to understand the development of surface morphology during film growth from fullerene precursors and to elucidate the factors leading to surface roughness when hydrogen is present in the chemical vapor deposition (CVD) gas mixtures. To achieve these goals, we are measuring surface reflectivity of diamond films growing on silicon substrates over a wide range of plasma processing conditions. A model for the interpretation of the laser interferometric data has been developed, which allows one to determine film growth rate, rms surface roughness, and bulk losses due to scattering and absorption. The rms roughness values determined by reflectivity are in good agreement with atomic force microscope (AFM) measurements. A number of techniques, including high-resolution transmission electron microscopy (HRTEM) and near-edge x-ray absorption find structure (NEXAFS) measurements, have been used to characterize the films. A mechanism for diamond-film growth involving the C{sub 2} molecule as a growth species will be presented. The mechanism is based on (1) the observation that the optical emission spectra of the fullerene- containing plasmas are dominated by the Swan bands of C{sub 2} and (2) the ability of C{sub 2} to insert directly into C-H and C-C bonds with low activation barriers, as shown by recent theoretical calculations of reactions of C{sub 2} with carbon clusters.

  14. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

    SciTech Connect

    Davies, M. J. Hammersley, S.; Dawson, P.; Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.

    2016-02-07

    In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.

  15. Tissue grown in NASA Bioreactor

    NASA Technical Reports Server (NTRS)

    1998-01-01

    Cells from kidneys lose some of their special features in conventional culture but form spheres replete with specialized cell microvilli (hair) and synthesize hormones that may be clinically useful. Ground-based research studies have demonstrated that both normal and neoplastic cells and tissues recreate many of the characteristics in the NASA bioreactor that they display in vivo. Proximal kidney tubule cells that normally have rich apically oriented microvilli with intercellular clefts in the kidney do not form any of these structures in conventional two-dimensional monolayer culture. However, when normal proximal renal tubule cells are cultured in three-dimensions in the bioreactor, both the microvilli and the intercellular clefts form. This is important because, when the morphology is recreated, the function is more likely also to be rejuvenated. The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC).

  16. R3Au(6+x)Al26T (R = Ca, Sr, Eu, Yb; T = early transition metal): a large family of compounds with a stuffed BaHg11 structure type grown from aluminum flux.

    PubMed

    Latturner, Susan E; Bilc, Daniel; Mahanti, S D; Kanatzidis, Mercouri G

    2009-02-16

    A collection of new quaternary intermetallic compounds with a cubic, stuffed BaHg(11) structure type has been synthesized by the combination of a divalent rare earth or alkaline earth metal R, an early transition metal T, and gold in an excess of molten aluminum. Structural characterization of these R(3)Au(6+x)Al(26)T compounds by powder and single crystal X-ray diffraction indicates that the unit cell varies with the radii of the early transition metal T and the rare earth/alkaline earth R as expected. The element T (where T = group 4, 5, 6, and 7 element) appears to be responsible for the stabilization of up to 43 different members of the R(3)Au(6+x)Al(26)T family of compounds. Varying amounts of disorder and trends in partial occupancies of the Au stuffed site--the site that is vacant in the parent compound BaHg(11)--are also indicated by the diffraction studies of this family of compounds. Magnetic susceptibility data reveals that the transition metal atoms in these materials do not possess local magnetic moments. For the magnetic rare earth containing materials, the europium compounds undergo a ferromagnetic transition at 10 K, and the ytterbium analogues show mixed valent behavior. Band structure calculations also support a mixed valent state for Yb in these compounds.

  17. Symbiotic functioning, structural adaptation, and subcellular organization of root nodules from Psoralea pinnata (L.) plants grown naturally under wetland and upland conditions in the Cape Fynbos of South Africa.

    PubMed

    Kanu, Sheku A; Dakora, Felix D

    2017-01-01

    In the Cape Fynbos of South Africa, Psoralea pinnata (L.) plants occur naturally in both wetland and well-drained soils and yet effectively fix N2 under the two contrasting conditions. In this study, nodule structure and functioning in P. pinnata plants from the two habitats were evaluated using light and transmission electron microscopy (TEM), as well as the (15)N natural abundance technique. The results showed that, structurally, fully developed P. pinnata nodules were spherical in shape with six components (namely, lenticels, periderm, outer cortex, middle cortex, inner cortex, and a central bacteria-infected medulla region). Morphometric analysis revealed 44 and 84 % increase in cell area and volume of wetland nodules compared to those from upland. The percentage area of nodules occupied by the middle cortex in wetland nodules was twice that of upland nodules. As a result, the size of the medulla region in wetland nodules was significantly reduced compared to upland nodules. Additionally, the average area of medulla occupied by intercellular air spaces in wetland nodules was about five times that of upland nodules (about 431 % increase in wetland over upland nodules). TEM data also showed more bacteroids in symbiosomes of upland nodules when compared to wetland nodules. However, isotopic analysis of above-ground plant parts revealed no differences in symbiotic parameters such as N concentration, ∂(15)N and %Ndfa between wetland and upland P. pinnata plants. These results suggest that, under limiting O2 conditions especially in wetlands, nodules make structural and functional adjustments to meet the O2 demands of N2-fixing bacteroids.

  18. Plasmonic and Superconducting Self-Assembled MBE Grown Indium Islands

    NASA Astrophysics Data System (ADS)

    Gibson, Ricky Dean, Jr.

    Molecular beam epitaxy (MBE) grown metal has been a renewed area of interest recently in order to achieve high quality metal films or nanostructures for plasmonics. Recently MBE grown silver films have been shown to possess optical constants closer to that of intrinsic silver leading to lower losses and thus allowing for higher quality plasmonics. MBE has also been used to grow silver nanocrystals and indium droplets, or islands, for plasmonics. These self-assembled nanostructures can be grown in close proximity to quantum confined structures such as InAs/GaAs quantum dots or InGaAs/GaAs quantum wells in a single process, without post-processing and fabrication, allowing for increased plasmonic enhancement due to the improved interface between the semiconductor and plasmonic structures. In this dissertation, widely tunable plasmonic resonances of indium islands will be discussed and plasmonic enhancement results will be presented and compared to those of nanoantennas constructed from standard fabrication processes. The coupling between near-surface quantum confined structures, both fabricated and self-assembled, will be compared to the coupling in typical dielectric cavities, such as photonic crystal nanobeams. Beyond the plasmonic possibilities of indium islands, indium becomes superconducting at 3.4 K. With the proximity effect allowing for electrons in materials in contact with a superconductor to occupy a superconducting like state, allowing for the possibility for a hybrid superconductor/semiconductor optical source. The observation of superconductivity in indium islands will be presented and considerations for a superconductor/semiconductor source will be discussed.

  19. Stability of Detached Grown Germanium Single Crystals

    NASA Technical Reports Server (NTRS)

    Schweizer, M.; Volz, M. P.; Cobb, S. D.; Vujisic, L.; Szofran, F. R.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Detachment of the melt meniscus from the crucible during semiconductor Bridgman growth experiments has been observed in recent years, especially under microgravity experiments. Under earth conditions, the hydrostatic pressure counteracts the mechanism, whereby it is more difficult to achieve detached Bridgman growth. Attempts to get stable detached growth under terrestrial conditions have been discussed in the literature and have been the subject of recent experiments in our own group. The advantage of crystals grown without wall contact is obvious: In general, they possess a higher crystal quality than conventional Bridgman grown crystals with wall contact. However, due to the interaction of different parameters such as the wetting behavior of the melt with the crucible, and the dependence of the growth angle with the shape of the melt meniscus, the mechanism leading to detachment is very complicated and not completely understood. We have grown several doped and undoped Germanium crystals with the detached Bridgman and the normal Bridgman growth technique. Pyrolytic boron nitride containers were used for all growth experiments. In the detached grown crystals the typical gap thickness between the pBN crucible and the crystal is in the range of 10 to 100 micrometers, which was determined by performing profilometer measurements. Etch pit density measurements were also performed and a comparison between detached and attached grown crystals will be given. An interesting feature was detected on the surface of a detached grown crystal. Strong surface striations with an average axial distance of 0.5 mm were observed around the whole circumference. The maximum fluctuation of the gap thickness is in the range of 5-10 micrometers. These variations of the detached gap along the crystal axis can be explained by a kind of stiction of the melt/crucible interface and thus by a variation of the meniscus shape. This phenomenon leading to the fluctuation of the gap thickness will be

  20. Stability of Detached Grown Germanium Single Crystals

    NASA Technical Reports Server (NTRS)

    Schweizer, M.; Volz, M. P.; Cobb, S. D.; Motakef, S.; Szofran, F. R.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Detachment of the melt meniscus from the crucible during semiconductor Bridgman growth experiments has been observed in recent years especially, under microgravity experiments. Under earth conditions, the hydrostatic pressure counteracts the mechanism, whereby it is more difficult to achieve detached Bridgman growth. Attempts to get stable detached growth under terrestrial conditions have been discussed in the literature and have been the subject of recent experiments in our own group. The advantage of crystals grown without wall contact is obvious: In general, they possess a higher crystal quality than conventional Bridgman grown crystals with wall contact. However, due to the interaction of different parameters such as the wetting behavior of the melt with the crucible, and the dependence of the growth angle with the shape of the melt meniscus, the mechanism leading to detachment is very complicated and not completely understood. We have grown several doped and undoped Germanium crystals with the detached Bridgman and the normal Bridgman growth technique. Pyrolytic boron nitride containers were used for all growth experiments. In the detached grown crystals the typical gap thickness between the pBN crucible and the crystal is in the range of 10 to 100 microns, which was determined by performing profilometer measurements. Etch pit density measurements were also performed and a comparison between detached and attached grown crystals will be given. An interesting feature was detected on the surface of a detached grown crystal. Strong surface striations with an average axial distance of 0.5mm were observed around the whole circumference. The maximum fluctuation of the gap thickness is in the range of 5-10 microns. These variations of the detached gap along the crystal axis can be explained by a kind of stiction of the melt/crucible interface and thus by a variation of the meniscus shape. This phenomenon leading to the fluctuation of the gap thickness will be

  1. Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

    SciTech Connect

    Shukrullah, S. E-mail: noranimuti-mohamed@petronas.com.my Mohamed, N. M. E-mail: noranimuti-mohamed@petronas.com.my Shaharun, M. S. E-mail: noranimuti-mohamed@petronas.com.my; Yasar, M.

    2014-10-24

    In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure.

  2. Solution grown PbS nanoparticle films [rapid communication

    NASA Astrophysics Data System (ADS)

    Joshi, Rakesh K.; Kanjilal, Aloke; Sehgal, H. K.

    2004-01-01

    Lead sulfide (PbS) nanoparticle films were chemically grown on glass, quartz and silicon substrates. Structure and size of PbS nanoparticles were characterized by X-ray diffraction and transmission electron microscopy (TEM), respectively. Large optical band gap has been observed in these films. The decreases in dc-conductivity, Hall mobility and carrier concentration with reducing grain size were also examined. Heterojunctions of p-PbS/n-Si were fabricated and photovoltaic effect was observed in these self-assembled heterojunctions.

  3. GaAs vapor-grown bipolar transistors.

    NASA Technical Reports Server (NTRS)

    Nuese, C. J.; Gannon, J. J.; Dean, R. H.; Gossenberger, H. F.; Enstrom, R. E.

    1972-01-01

    Discussion of an approach for the fabrication of high-temperature GaAs transistors which is centered on the preparation of n-p-n three-layered structures entirely by a vapor-phase growth technique, as described by Tietjen and Amick (1966). The low growth temperature of approximately 750 C is thought to reduce contamination during crystal growth and to contribute to the reasonably high minority-carrier lifetimes obtained for the vapor-grown p-n junctions. The fact that impurity concentrations and layer thicknesses can be precisely controlled for epitaxial layers as thin as 1 micrometer is an important feature of this growth technique.

  4. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    NASA Astrophysics Data System (ADS)

    Gladysiewicz, M.; Kudrawiec, R.; Wartak, M. S.

    2015-08-01

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 1018 cm-3, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ɛ = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga0.47In0.53As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

  5. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    SciTech Connect

    Gladysiewicz, M.; Wartak, M. S.; Kudrawiec, R.

    2015-08-07

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

  6. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

    2008-05-01

    The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH{sub 3}:Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH{sub 3}:Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of {approx}1.0 nm over 2x2 {mu}m{sup 2} atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 {mu}m/h were achieved. TD densities in the buffers as low as 3x10{sup 9} cm{sup -2} were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz.

  7. Grown-ups Ought To Know Better.

    ERIC Educational Resources Information Center

    Brightman, Samuel C.

    Among the articles by Sam Brightman collected in this volume from the newsletter, "Adult & Continuing Education Today (ACET)" are the following: "Grown-Ups Ought to Know Better"; "Adult Education: The Only Sure Factor Is Growth"; "Adult Education Important in This Election Year"; "Will Nursery School External Degree Programs Come Next?";…

  8. Efflux Of Nitrate From Hydroponically Grown Wheat

    NASA Technical Reports Server (NTRS)

    Huffaker, R. C.; Aslam, M.; Ward, M. R.

    1992-01-01

    Report describes experiments to measure influx, and efflux of nitrate from hydroponically grown wheat seedlings. Ratio between efflux and influx greater in darkness than in light; increased with concentration of nitrate in nutrient solution. On basis of experiments, authors suggest nutrient solution optimized at lowest possible concentration of nitrate.

  9. Luminescence from Erbium Oxide Grown on Silicon

    DTIC Science & Technology

    2002-01-01

    H9.14 Luminescence from erbium oxide grown on silicon E. Nogales’, B. Mrndez , J.Piqueras’, R.Plugaru2 , J. A. Garcfa3 and T. J. Tate4 ’ Universidad ... Complutense de Madrid, Dpto. Ffsica de Materiales, 28040 Madrid, Spain.2Inst. of Microtechnology, Bucharest, Romania.3Universidad del Pais Vasco, Dpto

  10. Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method.

    PubMed

    Malashchonak, Mikalai V; Mazanik, Alexander V; Korolik, Olga V; Streltsov, Еugene А; Kulak, Anatoly I

    2015-01-01

    The photoelectrochemical properties of nanoheterostructures based on the wide band gap oxide substrates (ZnO, TiO2, In2O3) and CdS nanoparticles deposited by the successive ionic layer adsorption and reaction (SILAR) method have been studied as a function of the CdS deposition cycle number (N). The incident photon-to-current conversion efficiency (IPCE) passes through a maximum with the increase of N, which is ascribed to the competition between the increase in optical absorption and photocarrier recombination. The maximal IPCE values for the In2O3/CdS and ZnO/CdS heterostructures are attained at N ≈ 20, whereas for TiO2/CdS, the appropriate N value is an order of magnitude higher. The photocurrent and Raman spectroscopy studies of CdS nanoparticles revealed the occurrence of the quantum confinement effect, demonstrating the most rapid weakening with the increase of N in ZnO/CdS heterostructures. The structural disorder of CdS nanoparticles was characterized by the Urbach energy (E U), spectral width of the CdS longitudinal optical (LO) phonon band and the relative intensity of the surface optical (SO) phonon band in the Raman spectra. Maximal values of E U (100-120 meV) correspond to СdS nanoparticles on a In2O3 surface, correlating with the fact that the CdS LO band spectral width and intensity ratio for the CdS SO and LO bands are maximal for In2O3/CdS films. A notable variation in the degree of disorder of CdS nanoparticles is observed only in the initial stages of CdS growth (several tens of deposition cycles), indicating the preservation of the nanocrystalline state of CdS over a wide range of SILAR cycles.

  11. Defect studies in 4H- Silicon Carbide PVT grown bulk crystals, CVD grown epilayers and devices

    NASA Astrophysics Data System (ADS)

    Byrappa, Shayan M.

    Silicon Carbide [SiC] which exists as more than 200 different polytypes is known for superior high temperature and high power applications in comparison to conventional semiconductor materials like Silicon and Germanium. The material finds plethora of applications in a diverse fields due to its unique properties like large energy bandgap, high thermal conductivity and high electric breakdown field. Though inundated with superior properties the potential of this material has not been utilized fully due to impeding factors such as defects especially the crystalline ones which limit their performance greatly. Lots of research has been going on for decades to reduce these defects and there has been subsequent improvement in the quality as the diameter of SiC commercial wafers has reached 150mm from 25mm since its inception. The main focus of this thesis has been to study yield limiting defect structures in conjunction with several leading companies and national labs using advanced characterization tools especially the Synchrotron source. The in depth analysis of SiC has led to development of strategies to reduce or eliminate the density of defects by studying how the defects nucleate, replicate and interact in the material. The strategies discussed to reduce defects were proposed after careful deliberation and analysis of PVT grown bulk crystals and CVD grown epilayers. Following are some of the results of the study: [1] Macrostep overgrowth mechanism in SiC was used to study the deflection of threading defects onto the basal plane resulting in stacking faults. Four types of stacking faults associated with deflection of c/c+a threading defects have been observed to be present in 76mm, 100mm and 150mm diameter wafers. The PVT grown bulk crystals and CVD grown epilayers in study were subjected to contrast studies using synchrotron white beam X-ray topography [SWBXT]. The SWBXT image contrast studies of these stacking faults with comparison of calculated phase shifts for

  12. GaAsP Nanowires Grown by Aerotaxy.

    PubMed

    Metaferia, Wondwosen; Persson, Axel R; Mergenthaler, Kilian; Yang, Fangfang; Zhang, Wei; Yartsev, Arkady; Wallenberg, Reine; Pistol, Mats-Erik; Deppert, Knut; Samuelson, Lars; Magnusson, Martin H

    2016-09-14

    We have grown GaAsP nanowires with high optical and structural quality by Aerotaxy, a new continuous gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH3/AsH3 ratio and growth temperature, size selected GaAs1-xPx nanowires (80 nm diameter) with pure zinc-blende structure and with direct band gap energies ranging from 1.42 to 1.90 eV (at 300 K), (i.e., 0 ≤ x ≤ 0.43) were grown, which is the energy range needed for creating tandem III-V solar cells on silicon. The phosphorus content in the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and among the wires. This proves the feasibility of growing GaAsP nanowires by Aerotaxy and results indicate that it is a generic process that can be applied to the growth of other III-V semiconductor based ternary nanowires.

  13. Magnesium diffusion profile in GaN grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Benzarti, Z.; Halidou, I.; Bougrioua, Z.; Boufaden, T.; El Jani, B.

    2008-07-01

    The diffusion of magnesium has been studied in GaN layers grown on sapphire substrate by atmospheric pressure metalorganic vapor-phase-epitaxy (MOVPE) in a "home-made" reactor. Secondary Ion Mass Spectroscopy (SIMS) was used to visualise the Mg profiles in two kinds of multi-sublayer GaN structures. One structure was grown with a variable flow of Ga precursor (TMG) and the second one with a variable growth temperature. In both cases, the Mg dopant precursor (Cp 2Mg) flow was kept constant. Using the second Fick's law to fit the experimental SIMS data, we have deduced an increasing then a saturating Mg diffusion coefficient versus the Mg concentration. Mg incorporation was found to get higher for lower growth rate, i.e. when TMG flow is reduced. Furthermore, based on the temperature-related behaviour we have found that the activation energy for Mg diffusion coefficient in GaN was 1.9 eV. It is suggested that Mg diffuses via substitutional sites.

  14. Structural, magnetic, and superconducting properties of pulsed-laser-deposition-grown La1.85 Sr0.15 CuO4 / La2/3 Ca1/3 MnO3 superlattices on (001)-oriented LaSrAlO4 substrates

    DOE PAGES

    Das, S.; Sen, K.; Marozau, I.; ...

    2014-03-12

    Epimore » taxial La1.85 Sr0.15 CuO4 / La2/3 Ca1/3 MnO3 (LSCO/LCMO) superlattices (SL) on (001)- oriented LaSrAlO4 substrates have been grown with pulsed laser deposition (PLD) technique. Their structural, magnetic and superconducting properties have been determined with in-situ reflection high energy electron diffraction (RHEED), x-ray diffraction, specular neutron reflectometry, scanning transmission electron microscopy (STEM), electric transport, and magnetization measurements. We find that despite the large mismatch between the in-plane lattice parameters of LSCO (a = 0.3779 nm) and LCMO (a = 0.387 nm) these superlattices can be grown epitaxially and with a high crystalline quality. While the first LSCO layer remains clamped to the LSAO substrate, a sizeable strain relaxation occurs already in the first LCMO layer. The following LSCO and LCMO layers adopt a nearly balanced state in which the tensile and compressive strain effects yield alternating in-plane lattice parameters with an almost constant average value. No major defects are observed in the LSCO layers, while a significant number of vertical antiphase boundaries are found in the LCMO layers. The LSCO layers remain superconducting with a relatively high superconducting onset temperature of Tconset ≈ 36 K. The macroscopic superconducting response is also evident in the magnetization data due to a weak diamagnetic signal below 10 K for H ∥ ab and a sizeable paramagnetic shift for H ∥ c that can be explained in terms of a vortex-pinning-induced flux compression. The LCMO layers maintain a strongly ferromagnetic state with a Curie temperature of TCurie ≈ 190 K and a large low-temperature saturation moment of about 3.5 (1) μB. These results suggest that the LSCO/LCMO superlattices can be used to study the interaction between the antagonistic ferromagnetic and superconducting orders and, in combination with previous studies on YBCO/LCMO superlattices, may allow one to identify the relevant

  15. Structural, magnetic, and superconducting properties of pulsed-laser-deposition-grown La1.85Sr0.15CuO4/La2/3Ca1/3MnO3 superlattices on (001)-oriented LaSrAlO4 substrates

    NASA Astrophysics Data System (ADS)

    Das, S.; Sen, K.; Marozau, I.; Uribe-Laverde, M. A.; Biskup, N.; Varela, M.; Khaydukov, Y.; Soltwedel, O.; Keller, T.; Döbeli, M.; Schneider, C. W.; Bernhard, C.

    2014-03-01

    Epitaxial La1.85Sr0.15CuO4/La2/3Ca1/3MnO3 (LSCO/LCMO) superlattices on (001)-oriented LaSrAlO4 substrates have been grown with pulsed laser deposition technique. Their structural, magnetic, and superconducting properties have been determined with in situ reflection high-energy electron diffraction, x-ray diffraction, specular neutron reflectometry, scanning transmission electron microscopy, electric transport, and magnetization measurements. We find that despite the large mismatch between the in-plane lattice parameters of LSCO (a =0.3779 nm) and LCMO (a =0.387 nm) these superlattices can be grown epitaxially and with a high crystalline quality. While the first LSCO layer remains clamped to the LaSrAlO4 substrate, a sizable strain relaxation occurs already in the first LCMO layer. The following LSCO and LCMO layers adopt a nearly balanced state in which the tensile and compressive strain effects yield alternating in-plane lattice parameters with an almost constant average value. No major defects are observed in the LSCO layers, while a significant number of vertical antiphase boundaries are found in the LCMO layers. The LSCO layers remain superconducting with a relatively high superconducting onset temperature of Tconset≈36 K. The macroscopic superconducting response is also evident in the magnetization data due to a weak diamagnetic signal below 10 K for H ∥ ab and a sizable paramagnetic shift for H ∥ c that can be explained in terms of a vortex-pinning-induced flux compression. The LCMO layers maintain a strongly ferromagnetic state with a Curie temperature of TCurie≈190 K and a large low-temperature saturation moment of about 3.5(1) μB per Mn ion. These results suggest that the LSCO/LCMO superlattices can be used to study the interaction between the antagonistic ferromagnetic and superconducting orders and, in combination with previous studies on YBa2Cu3O7-x/La2/3Ca1/3MnO3 superlattices, may allow one to identify the relevant mechanisms.

  16. Nucleolus in clinostat-grown plants

    SciTech Connect

    Shen-Miller, J.; Dannenhoffer, J. ); Hinchman, R. )

    1991-05-01

    The clinostat is an apparatus that is used to mimic zero gravity in studies of plant growth in the absence of gravitropic response. Clinostat-grown tissue cultures of carrot exhibit significant increases both in the number of nuclei containing more than one nucleolus and in nucleolar volume. Oat seedlings germinated and grown on clinostats exhibit a decreased rate of shoot elongation, increased tissue sensitivity to applied auxin, and an increased response to gravitropic stimulation. Clinostat treatment clearly affects plant metabolism. The nucleolus is the region in the nucleus where ribosome synthesis and assembly take place. The 18S, 5.8S, and 25S ribosomal genes, in tandem units, are located in the nucleolus. Ribosomes orchestrate the production of all proteins that are necessary for the maintenance of cell growth, development, and survival. A full study of the effects of nullification of gravitropism, by clinostat rotation, on nucleolar development in barley has been initiated. The authors study developmental changes of nucleolar number and diameter in clinostat-grown root tissues. Preliminary results show that barley roots exhibit changes in nucleolar number and diameter. Growth rates of barley root and shoot also appear to be reduced, in measurements of both length and weight.

  17. Mineral composition of organically grown tomato

    NASA Astrophysics Data System (ADS)

    Ghambashidze, Giorgi

    2014-05-01

    In recent years, consumer concerns on environmental and health issues related to food products have increased and, as a result, the demand for organically grown production has grown. Results indicate that consumers concerned about healthy diet and environmental degradation are the most likely to buy organic food, and are willing to pay a high premium. Therefore, it is important to ensure the quality of the produce, especially for highly consumed products. The tomato (Lycopersicon esculentum) is one of the most widely consumed fresh vegetables in the world. It is also widely used by the food industries as a raw material for the production of derived products such as purees or ketchup. Consequently, many investigations have addressed the impact of plant nutrition on the quality of tomato fruit. The concentrations of minerals (P, Na, K, Ca and Mg) and trace elements (Cu, Zn and Mn) were determined in tomatoes grown organically in East Georgia, Marneuli District. The contents of minerals and Mn seem to be in the range as shown in literature. Cu and Zn were found in considerably high amounts in comparison to maximum permissible values established in Georgia. Some correlations were observed between the minerals and trace elements studied. K and Mg were strongly correlated with Cu and Zn. Statistically significant difference have shown also P, K and Mg based between period of sampling.

  18. 7 CFR 51.1356 - Pears grown from late blooms.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 2 2013-01-01 2013-01-01 false Pears grown from late blooms. 51.1356 Section 51.1356 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards... Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long...

  19. 7 CFR 51.1356 - Pears grown from late blooms.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 2 2012-01-01 2012-01-01 false Pears grown from late blooms. 51.1356 Section 51.1356... STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long stems (commonly termed “rat...

  20. 7 CFR 51.1356 - Pears grown from late blooms.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Pears grown from late blooms. 51.1356 Section 51.1356... STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long stems (commonly termed “rat...

  1. 7 CFR 51.1356 - Pears grown from late blooms.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 2 2014-01-01 2014-01-01 false Pears grown from late blooms. 51.1356 Section 51.1356 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards... Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long...

  2. 7 CFR 51.1356 - Pears grown from late blooms.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 2 2011-01-01 2011-01-01 false Pears grown from late blooms. 51.1356 Section 51.1356... STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long stems (commonly termed “rat...

  3. Chemical and microstructural characterization of thermally grown alumina scales

    SciTech Connect

    Natesan, K.; Richier, C.; Veal, B.W.

    1995-09-01

    An experimental program has been initiated to evaluate the chemical, microstructural, and mechanical integrity of thermally grown oxide scales to establish requirements for improved corrosion performance in terms of composition, structure, and properties. Iron aluminides of several compositions were selected for the study. Oxidation studies were conducted in air and oxygen environments at 1000{degrees}C. The results showed that the scaling kinetics followed a parabolic rate law but that the rates in early stages of oxidation were significantly greater than in later stages; the difference could be attributed to the presence of fast-growing transient iron oxides in the layer during the early stages. Further, scale failure occurred via gross spallation, scale cracking, and nodule formation and was influenced by alloy composition. Auger electron spectroscopy of Ar-exposed specimens of ternary Fe-Cr-Al alloy showed sulfur on the gas/scale side of the interface; the sulfur decreased as the exposure time increased. Raman spectroscopy and ruby fluorescence were used to examine the scale development as a function of oxidation temperature. Ruby-line shift is used to examine phase transformations in alumina and to calculate compressive strains in thermally grown scales.

  4. InAsP quantum dot lasers grown by MOVPE.

    PubMed

    Karomi, Ivan; Smowton, Peter M; Shutts, Samuel; Krysa, Andrey B; Beanland, Richard

    2015-10-19

    We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers emit between 760 and 775 nm and 2 mm long lasers with uncoated facets have threshold current density of 260 Acm(-2), compared with 150 Acm(-2) for InP quantum dot samples, which emit at shorter wavelengths, 715-725 nm. Pulsed lasing is demonstrated for InAsP dots up to 380 K with up to 200 mW output power. Measured absorption spectra indicate the addition of Arsenic to the dots has shifted the available transitions to longer wavelengths but also results in a much larger degree of spectral broadening. These spectra and transmission electron microscopy images indicate that the InAsP dots have a much larger degree of inhomogeneous broadening due to dot size variation, both from layer to layer and within a layer.

  5. Analysis of Phase Separation in Czochralski Grown Single Crystal Ilmenite

    NASA Technical Reports Server (NTRS)

    Wilkins, R.; Powell, Kirk St. A.; Loregnard, Kieron R.; Lin, Sy-Chyi; Muthusami, Jayakumar; Zhou, Feng; Pandey, R. K.; Brown, Geoff; Hawley, M. E.

    1998-01-01

    Ilmenite (FeTiOs) is a wide bandgap semiconductor with an energy gap of 2.58 eV. Ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Single crystal ilmenite has been grown from the melt using the Czochralski method. Growth conditions have a profound effect on the microstructure of the samples. Here we present data from a variety of analytical techniques which indicate that some grown crystals exhibit distinct phase separation during growth. This phase separation is apparent for both post-growth annealed and unannealed samples. Under optical microscopy, there appear two distinct areas forming a matrix with an array of dots on order of 5 pm diameter. While appearing bright in the optical micrograph, atomic force microscope (AFM) shows the dots to be shallow pits on the surface. Magnetic force microscope (MFM) shows the dots to be magnetic. Phase identification via electron microprobe analysis (EMPA) indicates two major phases in the unannealed samples and four in the annealed samples, where the dots appear to be almost pure iron. This is consistent with micrographs taken with a scanning probe microscope used in the magnetic force mode. Samples that do not exhibit the phase separation have little or no discernible magnetic structure detectable by the MFM.

  6. High resolution synchrotron X-radiation diffraction imaging of crystals grown in microgravity and closely related terrestrial crystals

    NASA Technical Reports Server (NTRS)

    Steiner, Bruce; Dobbyn, Ronald C.; Black, David; Burdette, Harold; Kuriyama, Masao; Fripp, Archibald; Simchik, Richard

    1991-01-01

    Irregularities in three crystals grown in space and in four terrestrial crystals grown under otherwise comparable conditions have been observed in high resolution diffraction imaging. The images provide important new clues to the nature and origins of irregularities in each crystal. For two of the materials, mercuric iodide and lead tin telluride, more than one phase (an array of non-diffracting inclusions) was observed in terrestrial samples; but the formation of these multiple phases appears to have been suppressed in directly comparable crystals grown in microgravity. The terrestrial seed crystal of triglycine sulfate displayed an unexpected layered structure, which propagated during directly comparable space growth. Terrestrial Bridgman regrowth of gallium arsenide revealed a mesoscopic structure substantially different from that of the original Czochralski material. A directly comparable crystal is to be grown shortly in space.

  7. LCVD-grown micro carbon rod for MEMS applications: a study on the Raman spectroscopic characterization

    NASA Astrophysics Data System (ADS)

    Selvan, Jayaraman S.; Jeong, Sungho

    2002-11-01

    We have fabricated micro carbon rod/needle structures of size 30 to 400 μm on graphite substrate by the pyrolytic decomposition of ethylene precursor gas using argon ion laser (514.5 nm) at different laser power and chamber pressure. The micro carbon rods were characterized using Raman spectroscopy and two broad peaks centered at 1320-1345 cm-1 and 1589-1602 cm-1 were observed, which corresponds to D (disorder) and G (graphitic) bands, respectively. LCVD grown micro carbon rods consists of highly polycrystalline graphite as well as amorphous carbon phase. The microstructural features of the LCVD grown micro carbon rods are discussed in detail.

  8. Evaluation of GaN substrates grown in supercritical basic ammonia

    SciTech Connect

    Saito, Makoto; Yamada, Hisashi; Iso, Kenji; Sato, Hitoshi; Hirasawa, Hirohiko; Kamber, Derrick S.; Hashimoto, Tadao; Baars, Steven P. den; Speck, James S.; Nakamura, Shuji

    2009-02-02

    GaN crystals grown by the basic ammonothermal method were investigated for their use as substrates for device regrowth. X-ray diffraction analysis indicated that the substrates contained multiple grains while secondary ion mass spectroscopy (SIMS) revealed a high concentration of hydrogen, oxygen, and sodium. Despite these drawbacks, the emission from the light emitting diode structures grown by metal organic chemical vapor deposition on both the c-plane and m-plane epitaxial wafers was demonstrated. The SIMS depth profiles showed that the diffusion of the alkali metal from the substrate into the epitaxial film was small, especially in the m-direction.

  9. Colon tumor cells grown in NASA Bioreactor

    NASA Technical Reports Server (NTRS)

    2001-01-01

    These photos compare the results of colon carcinoma cells grown in a NASA Bioreactor flown on the STS-70 Space Shuttle in 1995 flight and ground control experiments. The cells grown in microgravity (left) have aggregated to form masses that are larger and more similar to tissue found in the body than the cells cultured on the ground (right). The principal investigator is Milburn Jessup of the University of Texas M. D. Anderson Cancer Center. The NASA Bioreactor provides a low turbulence culture environment which promotes the formation of large, three-dimensional cell clusters. Due to their high level of cellular organization and specialization, samples constructed in the bioreactor more closely resemble the original tumor or tissue found in the body. NASA-sponsored bioreactor research has been instrumental in helping scientists to better understand normal and cancerous tissue development. In cooperation with the medical community, the bioreactor design is being used to prepare better models of human colon, prostate, breast and ovarian tumors. Cartilage, bone marrow, heart muscle, skeletal muscle, pancreatic islet cells, liver and kidney are just a few of the normal tissues being cultured in rotating bioreactors by investigators. Cell constructs grown in a rotating bioreactor on Earth (left) eventually become too large to stay suspended in the nutrient media. In the microgravity of orbit, the cells stay suspended. Rotation then is needed for gentle stirring to replenish the media around the cells. The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC). Credit: NASA and University of Texas M. D. Anderson Cancer Center.

  10. Hyperfine-field spectrum of epitaxially grown bcc cobalt

    NASA Astrophysics Data System (ADS)

    Riedi, P. C.; Dumelow, T.; Rubinstein, M.; Prinz, G. A.; Qadri, S. B.

    1987-09-01

    The hyperfine-field spectrum of the bcc phase of a 357-romanÅ-thick metallic cobalt film, epitaxially grown on a GaAs substrate, has been determined by spin-echo nuclear magnetic resonance. The peak of the distribution of hyperfine fields in bcc Co occurs at 167 MHz, much lower than the value found for fcc Co (217 MHz), suggesting that the moment in the bcc phase is lower than that of the fcc phase, in agreement with the measurements of Prinz, but in disagreement with recent theoretical calculations (assuming that no significant structural differences exist between theory and experiment). The full width of the distribution is 75 MHz, seven times greater than that found in thin fcc Co films. X-ray rocking-curve measurements yield a linewidth of 118 arc seconds, implying too low a dislocation density to explain the observed NMR line broadening.

  11. Carbon nanotubes grown on bulk materials and methods for fabrication

    DOEpatents

    Menchhofer, Paul A [Clinton, TN; Montgomery, Frederick C [Oak Ridge, TN; Baker, Frederick S [Oak Ridge, TN

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  12. Porous ZnO nanonetworks grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, W. C. T.; Kendrick, C. E.; Millane, R. P.; Liu, Z.; Ringer, S. P.; Washburn, K.; Callaghan, P. T.; Durbin, S. M.

    2012-04-01

    Plasma-assisted molecular beam epitaxy was employed to create porous nanonetworks of ZnO directly on GaN epilayers without the use of catalysts or templates. Detailed analysis of scanning electron microscopy (SEM) images of both as-grown and etched samples reveals that the typical porous nanonetwork structure is multilayered, and suggests that dislocations originating at the GaN/sapphire heterointerface and/or defects characterizing an unusually rough GaN surface are responsible. The pore size distribution of the nanonetwork was measured using nuclear magnetic resonance (NMR) cryoporometry. A bimodal pore size distribution centred at 4 nm and 70 nm, respectively, was observed, consistent with the existence of small nanoscale pores in the bulk of the sample, and large open pores on the surface of the porous nanonetwork as observed by SEM.

  13. Active protein and calcium hydroxyapatite bilayers grown by laser techniques for therapeutic applications.

    PubMed

    Motoc, M M; Axente, E; Popescu, C; Sima, L E; Petrescu, S M; Mihailescu, I N; Gyorgy, E

    2013-09-01

    Active protein and bioceramic calcium hydroxyapatite (HA) bilayers were grown by combining conventional pulsed laser deposition (PLD) and matrix-assisted pulsed laser evaporation (MAPLE) techniques. A pulsed UV KrF* excimer laser was used for the irradiations. The HA layers were grown by PLD. Proteins with antimicrobial action were attached to the bioceramic layers using MAPLE. The composite MAPLE targets were obtained by dissolving the proteins powder in distilled water. The crystalline status and chemical composition of the obtained structures were studied by X-ray diffractometry and Fourier transform infrared spectroscopy. The layers were grown for the design of advanced future metal implants coatings, ensuring both enhanced bone formation and localized antimicrobial therapy. Our results demonstrated that protein coatings improve bone cell proliferation in vitro. Immunofluorescence experiments show that actin filaments stretch throughout bone cells and sustain their optimal spreading.

  14. Enhanced performance of room-temperature-grown epitaxial thin films of vanadium dioxide

    SciTech Connect

    Nag, Joyeeta; Payzant, E Andrew; More, Karren Leslie; HaglundJr., Richard F

    2011-01-01

    Stoichiometric vanadium dioxide in bulk, thin film and nanostructured forms exhibits an insulator-to-metal transition (IMT) accompanied by a structural phase transformation, induced by temperature, light, electric fields, doping or strain. We have grown epitaxial films of vanadium dioxide on c-plane (0001) of sapphire using two different procedures involving (1) room temperature growth followed by annealing and (2) direct high temperature growth. Strain at the film-substrate interface due to growth at different temperatures leads to interesting differences in morphologies and phase transition characteristics. Comparison of the morphologies and switching characteristics of the two films shows that contrary to conventional wisdom, the room-temperature grown films have smoother, more continuous morphologies and better switching performance, consistent with the behavior of epitaxially grown semiconductors.

  15. Fabrication of in-situ grown graphene reinforced Cu matrix composites

    PubMed Central

    Chen, Yakun; Zhang, Xiang; Liu, Enzuo; He, Chunnian; Shi, Chunsheng; Li, Jiajun; Nash, Philip; Zhao, Naiqin

    2016-01-01

    Graphene/Cu composites were fabricated through a graphene in-situ grown approach, which involved ball-milling of Cu powders with PMMA as solid carbon source, in-situ growth of graphene on flaky Cu powders and vacuum hot-press sintering. SEM and TEM characterization results indicated that graphene in-situ grown on Cu powders guaranteed a homogeneous dispersion and a good combination between graphene and Cu matrix, as well as the intact structure of graphene, which was beneficial to its strengthening effect. The yield strength of 244 MPa and tensile strength of 274 MPa were achieved in the composite with 0.95 wt.% graphene, which were separately 177% and 27.4% enhancement over pure Cu. Strengthening effect of in-situ grown graphene in the matrix was contributed to load transfer and dislocation strengthening. PMID:26763313

  16. Magnetic anisotropy and order structure of L1{sub 0}-FePt(001) single-crystal films grown epitaxially on (001) planes of MgO, SrTiO{sub 3}, and MgAl{sub 2}O{sub 4} substrates

    SciTech Connect

    Hotta, A. Hatayama, M.; Tsumura, K.; Ono, T.; Kikuchi, N.; Okamoto, S.; Kitakami, O.; Shimatsu, T.

    2014-05-07

    L1{sub 0}–FePt(001) single-crystal films were grown epitaxially on SrTiO{sub 3}(001), MgAl{sub 2}O{sub 4}(001), and MgO(001) substrates. Their uniaxial magnetic anisotropy K{sub u} and the order structure were examined for the film thickness t range of 2–14 nm. All series of films show large K{sub u} of 4 × 10{sup 7} erg/cm{sup 3} in the thickness range higher than 10 nm, with order parameter S of 0.8 and saturation magnetization M{sub s} of 1120 emu/cm{sup 3}. K{sub u} decreased gradually as t decreased. The K{sub u} reduction was considerable when t decreased from 4 nm to 2 nm. No marked difference in the thickness dependence of K{sub u} was found in any series of films, although the lattice mismatch between FePt and the substrates was markedly different. K{sub u} reduction showed good agreement with the reduction of S for the films on MgAl{sub 2}O{sub 4} and MgO. The K{sub u} ∼ S{sup 2} plot showed an almost linear relation, which is in good agreement with theoretical predictions. Transmission electron microscopy images for a FePt film on MgO substrate revealed that the lattice mismatch between FePt(001) and MgO(001) was relaxed in the initial 1 or 2 layers of FePt(001) lattices, which is likely to be true also for two other series of films.

  17. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    SciTech Connect

    McHugo, S.A.; Krueger, J.; Kisielowski, C.

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  18. Prostate tumor grown in NASA Bioreactor

    NASA Technical Reports Server (NTRS)

    2001-01-01

    This prostate cancer construct was grown during NASA-sponsored bioreactor studies on Earth. Cells are attached to a biodegradable plastic lattice that gives them a head start in growth. Prostate tumor cells are to be grown in a NASA-sponsored Bioreactor experiment aboard the STS-107 Research-1 mission in 2002. Dr. Leland Chung of the University of Virginia is the principal investigator. The NASA Bioreactor provides a low turbulence culture environment which promotes the formation of large, three-dimensional cell clusters. Due to their high level of cellular organization and specialization, samples constructed in the bioreactor more closely resemble the original tumor or tissue found in the body. The Bioreactor is rotated to provide gentle mixing of fresh and spent nutrient without inducing shear forces that would damage the cells. The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC). NASA-sponsored bioreactor research has been instrumental in helping scientists to better understand normal and cancerous tissue development. In cooperation with the medical community, the bioreactor design is being used to prepare better models of human colon, prostate, breast and ovarian tumors. Cartilage, bone marrow, heart muscle, skeletal muscle, pancreatic islet cells, liver and kidney are just a few of the normal tissues being cultured in rotating bioreactors by investigators. Credit: NASA and the University of Virginia.

  19. Exceptional gettering response of epitaxially grown kerfless silicon

    DOE PAGES

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; ...

    2016-02-08

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomeratesmore » at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.« less

  20. Exceptional gettering response of epitaxially grown kerfless silicon

    SciTech Connect

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; Jensen, M. A.; Morishige, A. E.; Castellanos, S.; Lai, B.; Peaker, A. R.; Buonassisi, T.

    2016-02-08

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomerates at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.

  1. Exceptional gettering response of epitaxially grown kerfless silicon

    NASA Astrophysics Data System (ADS)

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; Jensen, M. A.; Morishige, A. E.; Castellanos, S.; Lai, B.; Peaker, A. R.; Buonassisi, T.

    2016-02-01

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500× during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentration of point defects (likely Pt) is "locked in" during fast (60 °C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomerates at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. Device simulations suggest a solar-cell efficiency potential of this material >23%.

  2. TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates

    SciTech Connect

    Liliental-Weber, Z.; Ni, X.; Morkoc, H.

    2006-01-05

    Transmission electron microscopy (TEM) was used to study pendeo-epitaxial GaN layers grown on polar and non-polar 4H SiC substrates. The structural quality of the overgrown layers was evaluated using a number of TEM methods. Growth of pendeo-epitaxial layers on polar substrates leads to better structural quality of the overgrown areas, however edge-on dislocations are found at the meeting fronts of two wings. Some misorientation between the 'seed' area and wing area was detected by Convergent Beam Electron Diffraction. Growth of pendeo-epitaxial layers on non-polar substrates is more difficult. Two wings on the opposite site of the seed area grow in two different polar directions with different growth rates. Most dislocations in a wing grown with Ga polarity are 10 times wider than wings grown with N-polarity making coalescence of these layers difficult. Most dislocations in a wing grown with Ga polarity bend in a direction parallel to the substrate, but some of them also propagate to the sample surface. Stacking faults formed on the c-plane and prismatic plane occasionally were found. Some misorientation between the wings and seed was detected using Large Angle Convergent Beam Diffraction.

  3. Effects of mutual shading on the regulation of photosynthesis in field-grown sorghum.

    PubMed

    Li, Tao; Liu, Li-Na; Jiang, Chuang-Dao; Liu, Yu-Jun; Shi, Lei

    2014-08-01

    In the field, close planting inevitably causes mutual shading and depression of leaf photosynthesis. To clarify the regulative mechanisms of photosynthesis under these conditions, the effects of planting density on leaf structure, gas exchange and proteomics were carefully studied in field-grown sorghum. In the absence of mineral deficiency, (1) close planting induced a significant decrease in light intensity within populations, which further resulted in much lower stomatal density and other anatomical characteristics associated with shaded leaves; (2) sorghum grown at high planting density had a lower net photosynthetic rate and stomatal conductance than those grown at low planting density; (3) approximately 62 protein spots changed their expression levels under the high planting density conditions, and 22 proteins associated with photosynthesis were identified by mass spectrometry. Further analysis revealed the depression of photosynthesis caused by mutual shading involves the regulation of leaf structure, absorption and transportation of CO2, photosynthetic electron transport, production of assimilatory power, and levels of enzymes related to the Calvin cycle. Additionally, heat shock protein and oxygen-evolving enhancer protein play important roles in photoprotection in field-grown sorghum. A model for the regulation of photosynthesis under mutual shading was suggested based on our results.

  4. Optical investigations on Tb3+ doped L-Histidine hydrochloride mono hydrate single crystals grown by low temperature solution techniques

    NASA Astrophysics Data System (ADS)

    Rajyalakshmi, S.; Ramachandra Rao, K.; Brahmaji, B.; Samatha, K.; Visweswara Rao, T. K.; Bhagavannarayana, G.

    2016-04-01

    The potential nonlinear optical material of Terbium (Tb3+) ion doped L-Histidine hydrochloride monohydrate (LHHC) single crystals were successfully grown. Tb3+:LHHC crystals of 7 mm × 5 mm × 3 mm and 59 mm length and 15 mm diameter have been grown by the slow solvent evaporation and Sankaranarayanan-Ramasamy (SR) techniques respectively. The grown crystals were characterized by single crystal X-ray diffraction analysis to confirm the crystalline structure and morphology. High resolution X-ray diffraction (HRXRD) studies revealed that the SR grown sample shows relatively good crystalline nature with 9″ full-width at half-maximum (FWHM) for the diffraction curve. Functional groups were identified by Fourier transform infra-red spectroscopy (FTIR). The optical transparency and band gaps of grown crystals were measured by UV-Vis spectroscopy. Thermogravimetric and differential thermal analysis (TG/DTA) studies reveal that the crystal was thermally stable up to 155 °C in SR grown crystal. Surface morphology of the growth plane was observed using scanning electron microscopy (SEM). The incorporation of Tb ion was estimated by EDAX. The frequency-dependent dielectric properties of the crystals were carried out for different temperatures. Vickers hardness study carried out on (1 0 0) face at room temperature shows increased hardness of the SR method grown crystal. Second harmonic generation efficiency of SEST and SR grown crystals are 3.2 and 3.5 times greater than that of pure KDP. The Photoluminescence (PL) studies of Tb3+ ions result from the radiative intra-configurational f-f transitions that occur from the 5D4 excited state to the 7Fj (j = 6, 5, 4, 3) ground states. The decay curve of the 5D4 level of emission was observed with a long life time of 319.2041 μs for the SR grown Tb3+:LHHC crystal.

  5. Highly efficient excitonic emission of CBD grown ZnO micropods (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Aad, Roy; Gokarna, Anisha; Nomenyo, Komla; Miska, Patrice; Geng, Wei; Couteau, Christophe; Lérondel, Gilles

    2015-10-01

    Due to its wide direct band gap and large exciton binding energy allowing for efficient excitonic emission at room temperature, ZnO has attracted attention as a luminescent material in various applications such as UV-light emitting diodes, chemical sensors and solar cells. While low-cost growth techniques, such as chemical bath deposition (CBD), of ZnO thin films and nanostructures have been already reported; nevertheless, ZnO thin films and nanostructures grown by costly techniques, such as metalorganic vapour phase epitaxy, still present the most interesting properties in terms of crystallinity and internal quantum efficiency. In this work, we report on highly efficient and highly crystalline ZnO micropods grown by CBD at a low temperature (< 90°C). XRD and low-temperature photoluminescence (PL) investigations on as-grown ZnO micropods revealed a highly crystalline ZnO structure and a strong UV excitonic emission with internal quantum efficiency (IQE) of 10% at room temperature. Thermal annealing at 900°C of the as-grown ZnO micropods leads to further enhancement in their structural and optical properties. Low-temperature PL measurements on annealed ZnO micropods showed the presence of phonon replicas, which was not the case for as-grown samples. The appearance of phonon replicas provides a strong proof of the improved crystal quality of annealed ZnO micropods. Most importantly, low-temperature PL reveals an improved IQE of 15% in the excitonic emission of ZnO micropods. The ZnO micropods IQE reported here are comparable to IQEs reported on ZnO structures obtained by costly and more complex growth techniques. These results are of great interest demonstrating that high quality ZnO microstructures can be obtained at low temperatures using a low-cost CBD growth technique.

  6. Video of Tissue Grown in Space in NASA Bioreactor

    NASA Technical Reports Server (NTRS)

    2003-01-01

    Principal investigator Leland Chung grew prostate cancer and bone stromal cells aboard the Space Shuttle Columbia during the STS-107 mission. Although the experiment samples were lost along with the ill-fated spacecraft and crew, he did obtain downlinked video of the experiment that indicates the enormous potential of growing tissues in microgravity. Cells grown aboard Columbia had grown far larger tissue aggregates at day 5 than did the cells grown in a NASA bioreactor on the ground.

  7. Structuralism.

    ERIC Educational Resources Information Center

    Piaget, Jean

    Provided is an overview of the analytical method known as structuralism. The first chapter discusses the three key components of the concept of a structure: the view of a system as a whole instead of so many parts; the study of the transformations in the system; and the fact that these transformations never lead beyond the system but always…

  8. Prospects of III-nitride optoelectronics grown on Si

    NASA Astrophysics Data System (ADS)

    Zhu, D.; Wallis, D. J.; Humphreys, C. J.

    2013-10-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

  9. Prospects of III-nitride optoelectronics grown on Si.

    PubMed

    Zhu, D; Wallis, D J; Humphreys, C J

    2013-10-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

  10. Tuning the crystallinity of thermoelectric Bi2Te3 nanowire arrays grown by pulsed electrodeposition

    NASA Astrophysics Data System (ADS)

    Lee, Jongmin; Farhangfar, Shadyar; Lee, Jaeyoung; Cagnon, Laurent; Scholz, Roland; Gösele, Ulrich; Nielsch, Kornelius

    2008-09-01

    Arrays of thermoelectric bismuth telluride (Bi2Te3) nanowires were grown into porous anodic alumina (PAA) membranes prepared by a two-step anodization. Bi2Te3 nanowire arrays were deposited by galvanostatic, potentiostatic and pulsed electrodeposition from aqueous solution at room temperature. Depending on the electrodeposition method and as a consequence of different growth mechanisms, Bi2Te3 nanowires exhibit different types of crystalline microstructure. Bi2Te3 nanowire arrays, especially those grown by pulsed electrodeposition, have a highly oriented crystalline structure and were grown uniformly as compared to those grown by other electrodeposition techniques used. X-ray diffraction (XRD) analyses are indicative of the existence of a preferred growth orientation. High resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirm the formation of a preferred orientation and highly crystalline structure of the grown nanowires. The nanowires were further analyzed by scanning electron microscopy (SEM). Energy dispersive x-ray spectrometry (EDX) indicates that the composition of Bi-Te nanowires can be controlled by the electrodeposition method and the relaxation time in the pulsed electrodeposition approach. The samples fabricated by pulsed electrodeposition were electrically characterized within the temperature range 240 K<=T<=470 K. Below T≈440 K, the nanowire arrays exhibited a semiconducting behavior. Depending on the relaxation time in the pulsed electrodeposition, the semiconductor energy gaps were estimated to be 210-290 meV. At higher temperatures, as a consequence of the enhanced carrier-phonon scattering, the measured electrical resistances increased slightly. The Seebeck coefficient was measured for every Bi2Te3 sample at room temperature by a very simple method. All samples showed a positive value (12-33 µV K-1), indicating a p-type semiconductor behavior.

  11. Pathogenicity of Listeria monocytogenes grown on crabmeat.

    PubMed Central

    Brackett, R E; Beuchat, L R

    1990-01-01

    The pathogenicity of Listeria monocytogenes as influenced by growth on crabmeat at 5 and 10 degrees C was studied. Crabmeat was inoculated with L. monocytogenes V7 (ca. 10(4) CFU/g) and incubated for up to 14 days at 5 and 10 degrees C. At selected incubation times, L. monocytogenes was removed from crabmeat by washing with 0.1 M potassium phosphate buffer (pH 7.0), and populations were determined by surface plating on LiCl-phenylethanol-moxalactam agar. Buffered suspensions were then centrifuged, and the resulting pellets were suspended in phosphate buffer containing 10% glycerol and stored at -18 degrees C. Thawed, diluted suspensions of cells were tested for pathogenicity by intraperitoneal injection into immunocompromised and nonimmunocompromised mice. L. monocytogenes cells recovered from crabmeat and then recultured in tryptose phosphate broth (TPB), as well as cells which had not been passed through crabmeat but had been cultured in TPB, were likewise harvested, suspended in buffered 10% glycerol, frozen, thawed, diluted, and tested for pathogenicity by intraperitoneal injection. Growth on crabmeat at 5 and 10 degrees C did not have a significant effect on pathogenicity. The population of L. monocytogenes necessary to kill about 50% of the immunocompromised mice in each test set within 7 days was about 10(4) CFU, and this result was not significantly affected by storage temperature of the crabmeat or type of substrate, i.e., crabmeat or TPB, on which it had grown. PMID:2111120

  12. Radiative efficiency of MOCVD grown QD lasers

    NASA Astrophysics Data System (ADS)

    Mawst, Luke; Tsvid, Gene; Dudley, Peter; Kirch, Jeremy; Park, J. H.; Kim, N.

    2010-02-01

    The optical spectral gain characteristics and overall radiative efficiency of MOCVD grown InGaAs quantum dot lasers have been evaluated. Single-pass, multi-segmented amplified spontaneous emission measurements are used to obtain the gain, absorption, and spontaneous emission spectra in real units. Integration of the calibrated spontaneous emission spectra then allows for determining the overall radiative efficiency, which gives important insights into the role which nonradiative recombination plays in the active region under study. We use single pass, multi-segmented edge-emitting in which electrically isolated segments allow to vary the length of a pumped region. In this study we used 8 section devices (the size of a segment is 50x300 μm) with only the first 5 segments used for varying the pump length. The remaining unpumped segments and scribed back facet minimize round trip feedback. Measured gain spectra for different pump currents allow for extraction of the peak gain vs. current density, which is fitted to a logarithmic dependence and directly compared to conventional cavity length analysis, (CLA). The extracted spontaneous emission spectrum is calibrated and integrated over all frequencies and modes to obtain total spontaneous radiation current density and radiative efficiency, ηr. We find ηr values of approximately 17% at RT for 5 stack QD active regions. By contrast, high performance InGaAs QW lasers exhibit ηr ~50% at RT.

  13. Systemic regulation of photosynthetic function in field-grown sorghum.

    PubMed

    Li, Tao; Liu, Yujun; Shi, Lei; Jiang, Chuangdao

    2015-09-01

    The photosynthetic characteristics of developing leaves of plants grown under artificial conditions are, to some extent, regulated systemically by mature leaves; however, whether systemic regulation of photosynthesis occurs in field-grown crops is unclear. To explore this question, we investigated the effects of planting density on growth characteristics, gas exchange, leaf nitrogen concentration and chlorophyll a fluorescence in field-grown sorghum (Sorghum bicolor L.). Our results showed that close planting resulted in a marked decline in light intensity in lower canopy. Sorghum plants grown at a high planting density had lower net photosynthetic rate (Pn), stomatal conductance (Gs), and transpiration rate (E) than plants grown at a low planting density. Moreover, in the absence of mineral deficiency, close planting induced a slight increase in leaf nitrogen concentration. The decreased photosynthesis in leaves of the lower canopy at high planting density was caused mainly by the low light. However, newly developed leaves exposed to high light in the upper canopy of plants grown at high planting density also exhibited a distinct decline in photosynthesis relative to plants grown at low planting density. Based on these results, the photosynthetic function of the newly developed leaves in the upper canopy was not determined fully by their own high light environment. Accordingly, we suggest that the photosynthetic function of newly developed leaves in the upper canopy of field-grown sorghum plants is regulated systemically by the lower canopy leaves. The differences in systemic regulation of photosynthesis were also discussed between field conditions and artificial conditions.

  14. Influence of shading on container-grown flowering dogwoods

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Bare root dogwoods can be successfully grown when transplanted into a container production system. Shade treatments regardless of color or density did have an effect on the plant growth of Cherokee Brave™ and Cherokee Princess dogwood. Plants grown under 50% black and 50% white shade had more heigh...

  15. 78 FR 28120 - Tomatoes Grown in Florida; Decreased Assessment Rate

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-14

    ... Agricultural Marketing Service 7 CFR Part 966 Tomatoes Grown in Florida; Decreased Assessment Rate AGENCY: Agricultural Marketing Service, USDA. ACTION: Affirmation of interim rule as final rule. SUMMARY: The... locally administers the marketing order which regulates the handling of tomatoes grown in Florida....

  16. Defect characterization of β-Ga2O3 single crystals grown by vertical Bridgman method

    NASA Astrophysics Data System (ADS)

    Ohba, Etsuko; Kobayashi, Takumi; Kado, Motohisa; Hoshikawa, Keigo

    2016-12-01

    The characteristics of structural defects observed on (100) wafers in β-Ga2O3 single crystals grown by directional solidification in a vertical Bridgman furnace were studied in terms of crystal growth conditions. No high-dislocation-density regions near the wafer periphery were observed owing to the lack of adhesion between the as-grown crystal ingot surface and the crucible inner wall, and directional solidification growth in a crucible with a very low temperature gradient resulted in β-Ga2O3 single crystals with a low mean dislocation density of 2.3 × 103 cm-2. Line-shaped defects up to 150 µm long in the [010] direction were detected at a mean density of 0.5 × 102 cm-2, which decreased with decreasing growth rate. The line-shaped defect structure and formation mechanism were discussed.

  17. MBE and ALD grown High k Dielectrics Gate Stacks on GaN

    NASA Astrophysics Data System (ADS)

    Chang, Y. C.; Lee, K. Y.; Lee, W. C.; Lin, T. D.; Lee, Y. J.; Huang, M. L.; Hong, M.; Kwo, J.; Wang, Y. H.

    2007-03-01

    III-nitride compound semiconductors are attractive for high-temperature and high-power MOSFET applications due to their intrinsic properties of wide band gap, high breakdown field, and high saturation velocity under high fields. In this work GaN-based high k MOS diodes were fabricated using MBE-grown Ga2O3(Gd2O3), MBE-grown HfO2 and ALD-grown HfO2 as the gate dielectrics with dielectric constants of 14.7, 17.4 and 16.5, respectively. All MOS diodes exhibited low leakage (<10-6 A/cm^2 at Vfb+1) and well behaved capacitance-voltage curves with a low interfacial density of states of ˜10^11 cm-2eV-1. Energy-band diagrams of the MOS structures have been determined by extracting valance-band offset (δEV) from HR-XPS and with the bandgaps of the oxides. For example, the ALD-grown HfO2-GaN at the interfaces gave approximately δEC and δEV of 1.2 eV and 1.1 eV, respectively.

  18. GaIn As Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE)

    NASA Astrophysics Data System (ADS)

    Ortiz Vázquez, F. E.; Mishurnyi, V. A.; Gorbatchev, A. Yu.; DeAnda, F.; Elyukhin, V. A.

    2009-05-01

    The majority of the semiconductor structures with QD today are grown by MBE and MOCVD. It is known that the best material quality can be achieved by LPE because, in contrast to MBE and MOCVD, this method is realized at near-equilibrium conditions. To develop QD LPE technology first of all it is necessary to find out a growth technique allowing the crystallization of epitaxial materials with very small volume. This can be done by means of different techniques. In this work we apply a low temperature short-time growth method, which allows the production not only of single, but also of multilayer heterostructures. We have grown GaxIn1-zAs QD on GaAs (100) substrates at 450 C. The details of the QD formation, depending on composition of the GaxIn-x As solid solutions, have been studied by atom-force microscopy. The photoluminescence spectra of investigated samples show, in addition to a short-wave GaAs related peak, a longer wavelength line, which disappears after removal of the grown GaInAs material using an etching solution. This fact, together with atom-force microscopy results can be interpreted as a proof that QD heterostructures were grown successfully by LPE.

  19. Micromagnetics and microstructure of epitaxially grown Co and Co-Cr films for perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Krishnan, K. M.; Takeuchi, T.; Hirayama, Y.; Donnet, D. M.; Honda, Y.; Futamoto, M.

    1994-07-01

    Highly c-axis oriented, single crystal films of Co(1-x)Cr(x) (0 less than or equal to x less than 0.3) have been grown epitaxially on mica substrates by e-beam evaporation. Films grown on Ru underlayers have an average grain size of 50-80 nm, negligibe fcc content, and very narrow c-axis dispersions. For Co films (x = 0), the as-grown magnetization structure are mainly 180 degree domain walls with a uniform distribution of cross-ties for thinner samples (less than or equal to 300 Angstrom), while thicker (greater than 400 Angstrom) ones show stripe domains. These images were analyzed in detail to measure the wall widths and associated energy densities for as-grown, remanent, and ac-magnetized samples. As expected, the magnetic properties of these films are composition dependent. However, for any Cr concentration, these films exhibit the largest saturation magnetization when compared with either sputtered or evaporated samples. This enhancement can be attributed to a nanometer-scale segregation of Cr, which in these samples could be particularly aided by the diffusion on the close-packed planes of the films with very narrow c-axis dispersions. Preliminary x-ray microanalysis and NMR data support this interpretation.

  20. An integrated method for quantifying root architecture of field-grown maize

    PubMed Central

    Wu, Jie; Guo, Yan

    2014-01-01

    Background and Aims A number of techniques have recently been developed for studying the root system architecture (RSA) of seedlings grown in various media. In contrast, methods for sampling and analysis of the RSA of field-grown plants, particularly for details of the lateral root components, are generally inadequate. Methods An integrated methodology was developed that includes a custom-made root-core sampling system for extracting intact root systems of individual maize plants, a combination of proprietary software and a novel program used for collecting individual RSA information, and software for visualizing the measured individual nodal root architecture. Key Results Example experiments show that large root cores can be sampled, and topological and geometrical structure of field-grown maize root systems can be quantified and reconstructed using this method. Second- and higher order laterals are found to contribute substantially to total root number and length. The length of laterals of distinct orders varies significantly. Abundant higher order laterals can arise from a single first-order lateral, and they concentrate in the proximal axile branching zone. Conclusions The new method allows more meaningful sampling than conventional methods because of its easily opened, wide corer and sampling machinery, and effective analysis of RSA using the software. This provides a novel technique for quantifying RSA of field-grown maize and also provides a unique evaluation of the contribution of lateral roots. The method also offers valuable potential for parameterization of root architectural models. PMID:24532646

  1. Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers

    SciTech Connect

    Umlor, M.T.; Keeble, D.J.; Asoka-Kumar, P.; Lynn, K.G.; Cooke, P.W.

    1994-08-01

    A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al{sub 0.32}Ga{sub 0.68}As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al{sub 0.32}Ga{sub 0.68}:Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700{degrees}C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450{degrees}C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500{degrees}C. The nature of the defect was shown to be different for material grown at 350 and 230{degrees}C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230{degrees}C, respectively.

  2. Carboxylate metabolism in sugar beet plants grown with excess Zn.

    PubMed

    Sagardoy, R; Morales, F; Rellán-Álvarez, R; Abadía, A; Abadía, J; López-Millán, A F

    2011-05-01

    The effects of Zn excess on carboxylate metabolism were investigated in sugar beet (Beta vulgaris L.) plants grown hydroponically in a growth chamber. Root extracts of plants grown with 50 or 100μM Zn in the nutrient solution showed increases in several enzymatic activities related to organic acid metabolism, including citrate synthase and phosphoenolpyruvate carboxylase, when compared to activities in control root extracts. Root citric and malic acid concentrations increased in plants grown with 100μM Zn, but not in plants grown with 50μM Zn. In the xylem sap, plants grown with 50 and 100μM Zn showed increases in the concentrations of citrate and malate compared to the controls. Leaves of plants grown with 50 or 100μM Zn showed increases in the concentrations of citric and malic acid and in the activities of citrate synthase and fumarase. Leaf isocitrate dehydrogenase increased only in plants grown with 50μM Zn when compared to the controls. In plants grown with 300μM Zn, the only enzyme showing activity increases in root extracts was citrate synthase, whereas the activities of other enzymes decreased compared to the controls, and root citrate concentrations increased. In the 300μM Zn-grown plants, the xylem concentrations of citric and malic acids were higher than those of controls, whereas in leaf extracts the activity of fumarase increased markedly, and the leaf citric acid concentration was higher than in the controls. Based on our data, a metabolic model of the carboxylate metabolism in sugar beet plants grown under Zn excess is proposed.

  3. Irrigation frequency alters nutrient uptake in container-grown Rhododendron plants grown with different rates of nitrogen

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The influence of irrigation frequency (same amount of water per day given at different times) on nutrient uptake of container-grown evergreen Rhododendron ‘P.J.M. Compact’ (PJM) and ‘English Roseum’ (ER) and deciduous Rhododendron ‘Gibraltar’ (AZ) grown with different rates of nitrogen (N) fertilize...

  4. Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites

    SciTech Connect

    Kadashchuk, A.; Schols, S.; Heremans, P.; Skryshevski, Yu.; Piryatinski, Yu.; Beinik, I.; Teichert, C.; Hernandez-Sosa, G.; Sitter, H.; Andreev, A.; Frank, P.; Winkler, A.

    2009-02-28

    A comparative study of steady-state and time-resolved photoluminescence of para-sexiphenyl (PSP) films grown by organic molecular beam epitaxy (OMBE) and hot wall epitaxy (HWE) under comparable conditions is presented. Using different template substrates [mica(001) and KCl(001) surfaces] as well as different OMBE growth conditions has enabled us to vary greatly the morphology of the PSP crystallites while keeping their chemical structure virtually untouched. We prove that the broad redshifted emission band has a structure-related origin rather than being due to monomolecular oxidative defects. We conclude that the growth conditions and type of template substrate impacts substantially on the film morphology (measured by atomic force microscopy) and emission properties of the PSP films. The relative intensity of the defect emission band observed in the delayed spectra was found to correlate with the structural quality of PSP crystallites. In particular, the defect emission has been found to be drastically suppressed when (i) a KCl template substrate was used instead of mica in HWE-grown films, and (ii) in the OMBE-grown films dominated by growth mounds composed of upright standing molecules as opposed to the films consisting of crystallites formed by molecules lying parallel to the substrate.

  5. Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites

    NASA Astrophysics Data System (ADS)

    Kadashchuk, A.; Schols, S.; Heremans, P.; Skryshevski, Yu.; Piryatinski, Yu.; Beinik, I.; Teichert, C.; Hernandez-Sosa, G.; Sitter, H.; Andreev, A.; Frank, P.; Winkler, A.

    2009-02-01

    A comparative study of steady-state and time-resolved photoluminescence of para-sexiphenyl (PSP) films grown by organic molecular beam epitaxy (OMBE) and hot wall epitaxy (HWE) under comparable conditions is presented. Using different template substrates [mica(001) and KCl(001) surfaces] as well as different OMBE growth conditions has enabled us to vary greatly the morphology of the PSP crystallites while keeping their chemical structure virtually untouched. We prove that the broad redshifted emission band has a structure-related origin rather than being due to monomolecular oxidative defects. We conclude that the growth conditions and type of template substrate impacts substantially on the film morphology (measured by atomic force microscopy) and emission properties of the PSP films. The relative intensity of the defect emission band observed in the delayed spectra was found to correlate with the structural quality of PSP crystallites. In particular, the defect emission has been found to be drastically suppressed when (i) a KCl template substrate was used instead of mica in HWE-grown films, and (ii) in the OMBE-grown films dominated by growth mounds composed of upright standing molecules as opposed to the films consisting of crystallites formed by molecules lying parallel to the substrate.

  6. Carbon Nanotube Microarrays Grown on Nanoflake Substrates

    NASA Technical Reports Server (NTRS)

    Schmidt, Howard K.; Hauge, Robert H.; Pint, Cary; Pheasant, Sean

    2013-01-01

    This innovation consists of a new composition of matter where single-walled carbon nanotubes (SWNTs) are grown in aligned arrays from nanostructured flakes that are coated in Fe catalyst. This method of growth of aligned SWNTs, which can yield well over 400 percent SWNT mass per unit substrate mass, exceeds current yields for entangled SWNT growth. In addition, processing can be performed with minimal wet etching treatments, leaving aligned SWNTs with superior properties over those that exist in entangled mats. The alignment of the nanotubes is similar to that achieved in vertically aligned nanotubes, which are called "carpets. " Because these flakes are grown in a state where they are airborne in a reactor, these flakes, after growing SWNTs, are termed "flying carpets. " These flakes are created in a roll-to-roll evaporator system, where three subsequent evaporations are performed on a 100-ft (approx. =30-m) roll of Mylar. The first layer is composed of a water-soluble "release layer, " which can be a material such as NaCl. After depositing NaCl, the second layer involves 40 nm of supporting layer material . either Al2O3 or MgO. The thickness of the layer can be tuned to synthesize flakes that are larger or smaller than those obtained with a 40-nm deposition. Finally, the third layer consists of a thin Fe catalyst layer with a thickness of 0.5 nm. The thickness of this layer ultimately determines the diameter of SWNT growth, and a layer that is too thick will result in the growth of multiwalled carbon nanotubes instead of single-wall nanotubes. However, between a thickness of 0.5 nm to 1 nm, single-walled carbon nanotubes are known to be the primary constituent. After this three-layer deposition process, the Mylar is rolled through a bath of water, which allows catalyst-coated flakes to detach from the Mylar. The flakes are then collected and dried. The method described here for making such flakes is analogous to that which is used to make birefringent ink that is

  7. Annealing And Device Characterization Of Hgcdte Grown On Cdte/Si Substrates

    NASA Astrophysics Data System (ADS)

    Simingalam, Sina

    Infrared sensors have long been utilized for personal, commercial, and government applications. Mercury cadmium telluride (MCT) is the highest quality material for infrared detection. Its limitation comes in the substrate that it is grown on. Cadmium zinc telluride (CZT) is the substrate of choice for its ability to be lattice matched to the MCT epilayer grown on it, but its limited size of less than 7x7 cm2 and high cost of 200 cm -2 has led to a push for alternative substrates. Silicon has been utilized as a potential alternative substrate due to its cost of less than 1 cm-2 and size of greater than 8" in diameter. However, it has a lattice mismatch of 19% with MCT, leading to an as-grown dislocation density of 1x107 cm-2 in the MCT epilayer. This is more than two orders of magnitude greater than the dislocation density of 1x105 cm-2 for MCT grown on CZT. The work presented in this dissertation looks at various ways of reducing the dislocation density and its impact on devices. Thermal cycle annealing (TCA) is the heating and cooling of a sample over a specified period of time. TCA has been applied to MCT in the past, but has had limited application due to interdiffusion of the as-grown layer structures. This was due to the high annealing temperature of 500°C and four cycles of 5 minutes at the high temperature. A new annealing setup has been made that allows dislocation reduction at high annealing temperatures as low as 350°C and 128 cycles of less than 5 seconds each at the high temperature. This results in a dislocation density reduction to 1x10 6 cm-2 with minimal diffusion for MCT grown on silicon-based substrates. Conducting 512 cycles at a high annealing temperature of 400°C did not result in further dislocation density reduction. This pushed the focus of the work onto other methods of dislocation reduction. To reduce the dislocation density further, etched mesa bar structures have been utilized to enhance dislocation reduction during thermal annealing

  8. Sun Oven Grown Cuprates Superconductivity and Periodic Lattice Distortions PLD

    NASA Astrophysics Data System (ADS)

    Acrivos, Juana V.; Chidvinadze, J. G.; Gulanova, D. D.; Loy, D.

    2011-03-01

    Bi 1.7 Pb 0.3 Sr 2 Ca n-1 Cu n O4 + 2 n + δ identified by the layer heavy element composition with substitution, s (2 s :2:n-1:n > 2) cuprates grown by green chemistry, transition temperatures to superconductivity Tc = 87 to 150K are related to their structure. Enhanced XRD at energies near but below the Cu K, and Pb and Bi L3-edges for pure n=2, 3 phases show Darwin shaped preferred [HKL] reflections that identify the magnitude of the allowed transition moment from the core state to extended unoccupied states determined by the electron density symmetry in that plane, confirmed by XAS of 3 μ m thick films. Weak PLD are still detected, but the stability gained by substitution of Bi by Pb is the formation of nearly symmetric Pb8 cubes in (2s : 2 : 1 : 2)13 and (2s < formula > < ? TeX super-lattices. The preferred 2D [HKL] reflection planes play the same role in the chemical activity of 3D solids as the linear bonds do in molecular reactions, governed by scattering dependent on the electron density symmetry in their highest and lowest unoccupied states. Supported by US NSF, Dreyfus, DOE Laboratories SSRL-SLAC, STUC-Ukraine and Georgia NSF.

  9. Tensile stress and creep in thermally grown oxide.

    PubMed

    Veal, Boyd W; Paulikas, Arvydas P; Hou, Peggy Y

    2006-05-01

    Structural components that operate at high temperatures (for example, turbine blades) rely on thermally grown oxide (TGO), commonly alumina, for corrosion protection. Strains that develop in TGOs during operation can reduce the protectiveness of the TGO. However, the occurrence of growth strains in TGOs, and mechanisms that cause them, are poorly understood. It is accepted that compressive strains can develop as oxygen and metal atoms meet to form new growth within constrained oxide. More controversial is the experimental finding that large tensile stresses, close to 1 GPa, develop during isothermal growth conditions in alumina TGO formed on a FeCrAlY alloy. Using a novel technique based on synchrotron radiation, we have confirmed these previous results, and show that the tensile strain develops as the early oxide, (Fe,Cr,Al)(2)O(3), converts to alpha-Al2O3 during the growth process. This allows us to model the strain behaviour by including creep and this diffusion-controlled phase change.

  10. Epitaxially-Grown GaN Junction Field Effect Transistors

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-05-19

    Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

  11. Nutritional Characteristics of Forage Grown in South of Benin

    PubMed Central

    Musco, Nadia; Koura, Ivan B.; Tudisco, Raffaella; Awadjihè, Ghislain; Adjolohoun, Sebastien; Cutrignelli, Monica I.; Mollica, Maria Pina; Houinato, Marcel; Infascelli, Federico; Calabrò, Serena

    2016-01-01

    In order to provide recommendations on the most useful forage species to smallholder farmers, eleven grass and eleven legume forages grown in Abomey-Calavi in Republic of Benin were investigated for nutritive value (i.e. chemical composition and energy content) and fermentation characteristics (i.e. gas and volatile fatty acid production, organic matter degradability). The in vitro gas production technique was used, incubating the forages for 120 h under anaerobic condition with buffalo rumen fluid. Compared to legume, tropical grass forages showed lower energy (8.07 vs 10.57 MJ/kg dry matter [DM]) and crude protein level (16.10% vs 19.91% DM) and higher cell wall content (neutral detergent fiber: 63.8% vs 40.45% DM), respectively. In grass forages, the chemical composition showed a quite high crude protein content; the in vitro degradability was slightly lower than the range of tropical pasture. The woody legumes were richer in protein and energy and lower in structural carbohydrates than herbaceous plants, however, their in vitro results are influenced by the presence of complex compounds (i.e. tannins). Significant correlations were found between chemical composition and in vitro fermentation characteristics. The in vitro gas production method appears to be a suitable technique for the evaluation of the nutritive value of forages in developing countries. PMID:26732328

  12. A comparative study on pure, L-arginine and glycine doped ammonium dihydrogen orthophosphate single crystals grown by slow solvent evaporation and temperature-gradient method

    NASA Astrophysics Data System (ADS)

    Pattanaboonmee, N.; Ramasamy, P.; Yimnirun, R.; Manyum, P.

    2011-01-01

    Single crystals of pure, L-arginine and glycine doped ammonium dihydrogen orthophosphate (ADP) were grown by both the slow solvent evaporation method and the temperature-gradient method of Sankaranarayanan-Ramasamy (SR). The metastable zone width for different saturation temperatures of pure glycine and L-arginine added solutions were carried out. The grown crystals were characterized by differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), powder X-ray diffraction (XRD), optical transmission, dielectric constant, dielectric loss, and Vickers microhardness. The DSC and TG curves of the grown crystals indicated that they were stable up to 200 °C. The XRD study confirmed the structure of the grown crystal. The optical transmission analysis revealed that the pure and doped ADP crystals had very high percentage of transmission in the entire visible region. The important optical parameters such as reflectance and extinction coefficients of the grown crystals were calculated. L-arginine and glycine were used as dopants to reduce dielectric constant of ADP. The a.c. resistivity and a.c. conductivity were calculated. Dielectric loss of the doped ADP crystals grown by the SR method is lower than the doped ADP crystals grown by the conventional method. Larger hardness value for the SR method grown crystals confirmed greater crystalline perfection.

  13. Auxin transport is required for hypocotyl elongation in light-grown but not dark-grown Arabidopsis.

    PubMed

    Jensen, P J; Hangarter, R P; Estelle, M

    1998-02-01

    Many auxin responses are dependent on redistribution and/or polar transport of indoleacetic acid. Polar transport of auxin can be inhibited through the application of phytotropins such as 1-naphthylphthalamic acid (NPA). When Arabidopsis thaliana seedlings were grown in the light on medium containing 1.0 microM NPA, hypocotyl and root elongation and gravitropism were strongly inhibited. When grown in darkness, however, NPA disrupted the gravity response but did not affect elongation. The extent of inhibition of hypocotyl elongation by NPA increased in a fluence-rate-dependent manner to a maximum of about 75% inhibition at 50 mumol m-2 s-1 of white light. Plants grown under continuous blue or far-red light showed NPA-induced hypocotyl inhibition similar to that of white-light-grown plants. Plants grown under continuous red light showed less NPA-induced inhibition. Analysis of photoreceptor mutants indicates the involvement of phytochrome and cryptochrome in mediating this NPA response. Hypocotyls of some auxin-resistant mutants had decreased sensitivity to NPA in the light, but etiolated seedlings of these mutants were similar in length to the wild type. These results indicate that light has a significant effect on NPA-induced inhibition in Arabidopsis, and suggest that auxin has a more important role in elongation responses in light-grown than in dark-grown seedlings.

  14. Measuring mechanodynamics in an unsupported epithelial monolayer grown at an air–water interface

    PubMed Central

    Gullekson, Corinne; Walker, Matthew; Harden, James L.; Pelling, Andrew E.

    2017-01-01

    Actomyosin contraction and relaxation in a monolayer is a fundamental biophysical process in development and homeostasis. Current methods used to characterize the mechanodynamics of monolayers often involve cells grown on solid supports such as glass or gels. The results of these studies are fundamentally influenced by these supporting structures. Here we describe a new method for measuring the mechanodynamics of epithelial monolayers by culturing cells at an air–liquid interface. These model monolayers are grown in the absence of any supporting structures, removing cell–substrate effects. This method’s potential was evaluated by observing and quantifying the generation and release of internal stresses upon actomyosin contraction (800 ± 100 Pa) and relaxation (600 ± 100 Pa) in response to chemical treatments. Although unsupported monolayers exhibited clear major and minor strain axes, they were not correlated with nuclear alignment as observed when the monolayers were grown on soft deformable gels. It was also observed that both gels and glass substrates led to the promotion of long-range cell nuclei alignment not seen in the hanging-drop model. This new approach provides us with a picture of basal actomyosin mechanodynamics in a simplified system, allowing us to infer how the presence of a substrate affects contractility and long-range multicellular organization and dynamics. PMID:28035043

  15. ZnO nanostructures directly grown on paper and bacterial cellulose substrates without any surface modification layer.

    PubMed

    Costa, Saionara V; Gonçalves, Agnaldo S; Zaguete, Maria A; Mazon, Talita; Nogueira, Ana F

    2013-09-21

    In this report, hierarchical ZnO nano- and microstructures were directly grown for the first time on a bacterial cellulose substrate and on two additional different papers by hydrothermal synthesis without any surface modification layer. Compactness and smoothness of the substrates are two important parameters that allow the growth of oriented structures.

  16. Effects of strain and light intensity on growth performance and carcass characteristics of broilers grown to heavy weights

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The effects of genetic strain and light intensity on growth performance and carcass characteristics of broilers grown to heavy weights were investigated. The experimental design was a randomized complete block design. Treatment structure was a 2 × 5 factorial arrangement with the main factors being ...

  17. Zinc oxide films chemically grown onto rigid and flexible substrates for TFT applications

    NASA Astrophysics Data System (ADS)

    Suchea, M.; Kornilios, N.; Koudoumas, E.

    2010-10-01

    This contribution presents some preliminary results regarding the use of a chemical route for the growth of good quality ZnO thin films that can be used for the fabrication of thin film transistors (TFTs). The films were grown at rather low temperature (60 °C) on glass and PET substrates using non-aqueous (zinc acetate dihydrate in methanol) precursor solution and their surface morphology, crystalline structure, optical transmittance and electrical characteristics were studied. The study indicated that good quality films with desirable ZnO structure onto rigid and flexible substrates can be obtained, using a simple, cheap, low temperature chemical growth method.

  18. Investigation of Annealing Atmospheres on Physical Properties of Cigs Films Grown by Electrodeposition Technique

    NASA Astrophysics Data System (ADS)

    Adel, Chihi; Fethi, Boujmil Mohamed; Brahim, Bessais

    2016-02-01

    This study investigated the effect of different annealing conditions (influence of the annealing temperature and atmosphere) on structural, microstructure, optical and electrical properties of electrodeposited CuIn1-xGaxSe2 (CIGS) thin films. X-ray diffraction analysis exhibited all the samples have grown preferentially in the [112] crystal orientation with the chalcopyrite structure and without unwanted secondary CIGS phases. With the increase of annealing temperature, energy band gap of the CIGS film decrease from 1.32 to 1.12eV. The electrical properties of the films distinctly upgraded after annealing in nitrogen+ Se vapor, and worsened when annealed in vacuum.

  19. Unforeseen properties of MnAs epilayers grown on GaAs semiconductor

    NASA Astrophysics Data System (ADS)

    Rache Salles, B.; Vidal, F.; Etgens, V. H.; Breitwieser, R.; Marangolo, M.; Eddrief, M.

    2009-10-01

    This paper reviews some recent works performed on MnAs/GaAs thin films and other related structures grown by molecular beam epitaxy. The impact of epitaxy on the magneto-structural properties of MnAs and possible applications of MnAs epilayers are discussed. A brief account of recent results obtained on the magneto-transport in MnAs/GaAs/MnAs magnetic tunnel junctions is also given, highlighting several appealing and promising properties of this system for spintronics applications.

  20. Silicon dioxide embedded germanium nanocrystals grown using molecular beam epitaxy for floating gate memory devices.

    PubMed

    Das, S; Singha, R K; Das, K; Dhar, A; Ray, S K

    2009-09-01

    SiO2/Ge nanocrystals/SiO2 trilayer memory structure has been fabricated by oxidizing and subsequent annealing of self assembled SiGe nanoislands grown by molecular beam epitaxy. The optical and charge storage characteristics of trilayer structures have been studied through Raman spectroscopy and capacitance-voltage measurements, respectively. An anti-clockwise hysteresis in the C-V characteristics indicated the net electron trapping in the floating gate containing Ge nanocrystals. Frequency dependent measurements of device characteristics indicate that neither interface defects nor deep traps are dominant for the charging or discharging processes of nanocrystal floating gates.

  1. 78 FR 77367 - Almonds Grown in California; Continuance Referendum

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-23

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF AGRICULTURE Agricultural Marketing Service 7 CFR Part 981 Almonds Grown in California; Continuance Referendum AGENCY: Agricultural Marketing Service, USDA. ACTION: Referendum order. SUMMARY: This document directs that...

  2. At last, a medical website designed for grown-ups

    MedlinePlus

    ... Current Issue Past Issues At last, a medical website designed for grown-ups Past Issues / Winter 2007 ... Javascript on. NIHSeniorHealth is the premier government health website for older Americans. It's packed with easy-to- ...

  3. Comparative lipid composition of heterotrophically and autotrophically grown Sulfolobus acidocaldarius.

    PubMed

    Langworthy, T A

    1977-06-01

    Complex lipids from the thermoacidophilic facultative autotroph Sulfolobus acidocaldarius, as well as a strictly autotrophic isolate, were compared between cells grown on yeast extract and elemental sulfur. Lipids from both organisms grown autotrophically were nearly identical. Each contained about 15% neutral lipids, 35% glycolipids, and 50% acidic lipids. Glycolipids and acidic lipids contained C40H82-76-derived glycerol ether residues. Major glycolipids included the glycerol ether analogues of glucosyl galactosyl diglyceride (5%) and glucosyl polyol diglyceride (75%). Acidic lipids were comprised mainly of the glycerol ether analogues of phosphatidyl inositol (7%), inositolphosphoryl glucosyl polyol diglyceride (72%), and a partially characterized sulfate- and phosphate-containing derivative of glucosyl polyol diglyceride (13%). The lipids from cells grown heterotrophically were similar to those from autotrophically grown cells, except that the partially characterized acidic lipid was absent. In addition, the two glycolipids as well as the respective inositolphosphoryl derivatives were each present in nearly equal proportions.

  4. Comparative lipid composition of heterotrophically and autotrophically grown Sulfolobus acidocaldarius.

    PubMed Central

    Langworthy, T A

    1977-01-01

    Complex lipids from the thermoacidophilic facultative autotroph Sulfolobus acidocaldarius, as well as a strictly autotrophic isolate, were compared between cells grown on yeast extract and elemental sulfur. Lipids from both organisms grown autotrophically were nearly identical. Each contained about 15% neutral lipids, 35% glycolipids, and 50% acidic lipids. Glycolipids and acidic lipids contained C40H82-76-derived glycerol ether residues. Major glycolipids included the glycerol ether analogues of glucosyl galactosyl diglyceride (5%) and glucosyl polyol diglyceride (75%). Acidic lipids were comprised mainly of the glycerol ether analogues of phosphatidyl inositol (7%), inositolphosphoryl glucosyl polyol diglyceride (72%), and a partially characterized sulfate- and phosphate-containing derivative of glucosyl polyol diglyceride (13%). The lipids from cells grown heterotrophically were similar to those from autotrophically grown cells, except that the partially characterized acidic lipid was absent. In addition, the two glycolipids as well as the respective inositolphosphoryl derivatives were each present in nearly equal proportions. Images PMID:863856

  5. Immunolabeling of cells grown attached to a substratum or in suspension with actin antibodies.

    PubMed

    Spudich, Anna

    2011-09-01

    Actin is a major component of all eukaryotic cells and is highly conserved across species. The different isoforms of actin show a very high degree of homology, and almost all actins bind cytochalasins, phallotoxins, and DNase I. Actin is important for maintaining cell shape and for myosin-based movements in cells. In addition, the actin cytoskeleton is involved in localization of other molecules in the cytoplasm and in cellular compartmentalization. Polyclonal and monoclonal antibodies with different specificities are commercially available for labeling actin-containing structures in cells. This article describes a protocol for immunolabeling actin that works well for cells grown in tissue culture as monolayers and for cells grown in suspension cultures that can be attached to polylysine-coated coverslips.

  6. Piezoelectric nanogenerator based on zinc oxide nanorods grown on textile cotton fabric

    NASA Astrophysics Data System (ADS)

    Khan, Azam; Ali Abbasi, Mazhar; Hussain, Mushtaque; Hussain Ibupoto, Zafar; Wissting, Jonas; Nur, Omer; Willander, Magnus

    2012-11-01

    This investigation explores piezoelectricity generation from ZnO nanorods, which were grown on silver coated textile cotton fabrics using the low temperature aqueous chemical growth method. The morphology and crystal structure studies were carried out by x-ray diffraction, scanning electron microscopic and high resolution transmission electron microscopic techniques, respectively. ZnO nanorods were highly dense, well aligned, uniform in spatial distribution and exhibited good crystal quality. The generation of piezoelectricity from fabricated ZnO nanorods grown on textile cotton fabrics was measured using contact mode atomic force microscopy. The average output voltage generated from ZnO nanorods was measured to be around 9.5 mV. This investigation is an important achievement regarding the piezoelectricity generation on textile cotton fabric substrate. The fabrication of this device provides an alternative approach for a flexible substrate to develop devices for energy harvesting and optoelectronic technology on textiles.

  7. Photoconductivities in monocrystalline layered V2O5 nanowires grown by physical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, Ruei-San; Wang, Wen-Chun; Chan, Ching-Hsiang; Hsu, Hung-Pin; Tien, Li-Chia; Chen, Yu-Jyun

    2013-10-01

    Photoconductivities of monocrystalline vanadium pentoxide (V2O5) nanowires (NWs) with layered orthorhombic structure grown by physical vapor deposition (PVD) have been investigated from the points of view of device and material. Optimal responsivity and gain for single-NW photodetector are at 7,900 A W-1 and 30,000, respectively. Intrinsic photoconduction (PC) efficiency (i.e., normalized gain) of the PVD-grown V2O5 NWs is two orders of magnitude higher than that of the V2O5 counterpart prepared by hydrothermal approach. In addition, bulk and surface-controlled PC mechanisms have been observed respectively by above- and below-bandgap excitations. The coexistence of hole trapping and oxygen sensitization effects in this layered V2O5 nanostructure is proposed, which is different from conventional metal oxide systems, such as ZnO, SnO2, TiO2, and WO3.

  8. Functionalizing single crystals: incorporation of nanoparticles inside gel-grown calcite crystals.

    PubMed

    Liu, Yujing; Yuan, Wentao; Shi, Ye; Chen, Xiaoqiang; Wang, Yong; Chen, Hongzheng; Li, Hanying

    2014-04-14

    Synthetic single crystals are usually homogeneous solids. Biogenic single crystals, however, can incorporate biomacromolecules and become inhomogeneous solids so that their properties are also extrinsically regulated by the incorporated materials. The discrepancy between the properties of synthetic and biogenic single crystals leads to the idea to modify the internal structure of synthetic crystals to achieve nonintrinsic properties by incorporation of foreign material. Intrinsically colorless and diamagnetic calcite single crystals are turned into colored and paramagnetic solids, through incorporation of Au and Fe3O4 nanoparticles without significantly disrupting the crystalline lattice of calcite. The crystals incorporate the nanoparticles and gel fibers when grown in agarose gel media containing the nanoparticles, whereas the solution-grown crystals do not. As such, our work extends the long-history gel method for crystallization into a platform to functionalize single-crystalline materials.

  9. Electron microscopy of an aluminum layer grown on the vicinal surface of a gallium arsenide substrate

    SciTech Connect

    Lovygin, M. V. Borgardt, N. I.; Kazakov, I. P.; Seibt, M.

    2015-03-15

    A thin Al layer grown by molecular-beam epitaxy on a misoriented GaAs (100) substrate is studied by transmission electron microscopy. Electron diffraction data and bright-field, dark-field, and high-resolution images show that, in the layer, there are Al grains of three types of crystallographic orientation: Al (100), Al (110), and Al (110)R. The specific structural features of the interfaces between the differently oriented grains and substrate are studied by digital processing of the high-resolution images. From quantitative analysis of the dark-field images, the relative content and sizes of the differently oriented grains are determined. It is found that atomic steps at the substrate surface cause an increase in the fraction and sizes of Al (110)R grains and a decrease in the fraction of Al (100) grains, compared to the corresponding fractions and sizes in the layer grown on a singular substrate surface.

  10. Inverted fractal analysis of TiOx thin layers grown by inverse pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Égerházi, L.; Smausz, T.; Bari, F.

    2013-08-01

    Inverted fractal analysis (IFA), a method developed for fractal analysis of scanning electron microscopy images of cauliflower-like thin films is presented through the example of layers grown by inverse pulsed laser deposition (IPLD). IFA uses the integrated fractal analysis module (FracLac) of the image processing software ImageJ, and an objective thresholding routine that preserves the characteristic features of the images, independently of their brightness and contrast. IFA revealed fD = 1.83 ± 0.01 for TiOx layers grown at 5-50 Pa background pressures. For a series of images, this result was verified by evaluating the scaling of the number of still resolved features on the film, counted manually. The value of fD not only confirms the fractal structure of TiOx IPLD thin films, but also suggests that the aggregation of plasma species in the gas atmosphere may have only limited contribution to the deposition.

  11. Photoconductivities in monocrystalline layered V2O5 nanowires grown by physical vapor deposition

    PubMed Central

    2013-01-01

    Photoconductivities of monocrystalline vanadium pentoxide (V2O5) nanowires (NWs) with layered orthorhombic structure grown by physical vapor deposition (PVD) have been investigated from the points of view of device and material. Optimal responsivity and gain for single-NW photodetector are at 7,900 A W-1 and 30,000, respectively. Intrinsic photoconduction (PC) efficiency (i.e., normalized gain) of the PVD-grown V2O5 NWs is two orders of magnitude higher than that of the V2O5 counterpart prepared by hydrothermal approach. In addition, bulk and surface-controlled PC mechanisms have been observed respectively by above- and below-bandgap excitations. The coexistence of hole trapping and oxygen sensitization effects in this layered V2O5 nanostructure is proposed, which is different from conventional metal oxide systems, such as ZnO, SnO2, TiO2, and WO3. PMID:24160337

  12. Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals

    NASA Astrophysics Data System (ADS)

    Taishi, T.; Kobayashi, T.; Shinozuka, M.; Ohba, E.; Miyagawa, C.; Hoshikawa, K.

    2014-09-01

    Morphologies of metallic inclusions observed in sapphire crystals grown by the vertical Bridgman (VB) technique using a tungsten (W) crucible were investigated. Square- or hexagonal-shaped inclusions 2-5 μm in size were observed in sapphire crystals around the interface between the seed and the grown crystal. It was found that such inclusions consisted of W metal used for the crucible. The morphology of some of the inclusions reflects a rhombic dodecahedron which is based on the cubic structure of W and is surrounded by {110} faces. It is probable that inclusions form in the sapphire melt during the crystal growth process, and then sink in the melt to the growth interface due to the high density of W.

  13. N 2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD

    NASA Astrophysics Data System (ADS)

    Tan, C. S.; Choi, W. K.; Bera, L. K.; Pey, K. L.; Antoniadis, D. A.; Fitzgerald, E. A.; Currie, M. T.; Maiti, C. K.

    2001-11-01

    Oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD method using a rapid thermal processing technique in N 2O ambient is investigated. The electrical properties of the grown oxide have been characterized using a MOS structure. Hole confinement in the SiGe layer at low field is observed from the capacitance-voltage curve and this suggests that the strain in the initially strained Si epilayer is retained after oxidation. The experimental results are compared with simulation results obtained from a 1D Poisson solver. Dit and Qf/ q values are estimated to be 3×10 11 cm -2 eV -1 and -1.2×10 11 cm -2, respectively. These high values of Dit and negative Qf/ q could possibly be due to Ge out diffusion and pile up at the SiO 2/strained-Si interface. The oxide exhibits an excellent breakdown field of 15 MV cm -1.

  14. Re-grown aligned carbon nanotubes with improved field emission.

    PubMed

    Lim, Xiaodai; Zhu, Yanwu; Varghese, Binni; Gao, Xingyu; Wee, Andrew Thye Shen; Sow, Chorng-Haur

    2012-01-01

    In this work, a simple technique to improve the field emission property of multi-walled carbon nanotubes is presented. Re-grown multi-walled carbon nanotubes are grown on the same substrates after the as-grown multi-walled carbon nanotubes are transferred to other substrates using polydimethylsiloxane as intermediation. For the duration of the synthesis of the re-grown multi-walled carbon nanotubes, similar synthesis parameters used in growing the as-grown multi-walled carbon nanotubes are utilized. As a form of possible application, field emission studies show -2.6 times improvement in field enhancement factor and more uniform emission for the re-grown multi-walled carbon nanotubes. In addition, the turn-on field is reduced from 2.85 V/microm to 1.40 V/microm. Such significant improvements are attributed to new emission sites comprising of sharp carbonaceous impurities encompassing both tip and upper portion of the multi-walled carbon nanotubes. As such, this technique presents a viable route for the production of multi-walled carbon nanotubes with better field emission quality.

  15. Defect Density Characterization of Detached-Grown Germanium Crystals

    NASA Technical Reports Server (NTRS)

    Schweizer, M.; Cobb, S. D.; Volz, M. P.; Szoke, J.; Szofran, F. R.; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    Several (111)-oriented, Ga-doped germanium crystals were grown in pyrolytic boron nitride (pBN) containers by the Bridgman and the detached Bridgman growth techniques. Growth experiments in closed-bottom pBN containers resulted in nearly completely detached-grown crystals, because the gas pressure below the melt can build up to a higher pressure than above the melt. With open-bottom tubes the gas pressure above and below the melt is balanced during the experiment, and thus no additional force supports the detachment. In this case the crystals grew attached to the wall. Etch pit density (EPD) measurements along the axial growth direction indicated a strong improvement of the crystal quality of the detached-grown samples compared to the attached samples. Starting in the seed with an EPD of 6-8 x 10(exp 3)/square cm it decreased in the detached-grown crystals continuously to about 200-500/square cm . No significant radial difference between the EPD on the edge and the middle of the crystal exists. In the attached grown samples the EPD increases up to a value of about 2-4 x 10(exp 4)/square cm (near the edge) and up to 1 x 10(exp 4)/square cm in the middle of the sample. Thus the difference between the detached- and the attached-grown crystals with respect to the EPD is approximately two orders of magnitude.

  16. Quantification of confocal images of biofilms grown on irregular surfaces

    PubMed Central

    Ross, Stacy Sommerfeld; Tu, Mai Han; Falsetta, Megan L.; Ketterer, Margaret R.; Kiedrowski, Megan R.; Horswill, Alexander R.; Apicella, Michael A.; Reinhardt, Joseph M.; Fiegel, Jennifer

    2014-01-01

    Bacterial biofilms grow on many types of surfaces, including flat surfaces such as glass and metal and irregular surfaces such as rocks, biological tissues and polymers. While laser scanning confocal microscopy can provide high-resolution images of biofilms grown on any surface, quantification of biofilm-associated bacteria is currently limited to bacteria grown on flat surfaces. This can limit researchers studying irregular surfaces to qualitative analysis or quantification of only the total bacteria in an image. In this work, we introduce a new algorithm called modified connected volume filtration (MCVF) to quantify bacteria grown on top of an irregular surface that is fluorescently labeled or reflective. Using the MCVF algorithm, two new quantification parameters are introduced. The modified substratum coverage parameter enables quantification of the connected-biofilm bacteria on top of the surface and on the imaging substratum. The utility of MCVF and the modified substratum coverage parameter were shown with Pseudomonas aeruginosa and Staphylococcus aureus biofilms grown on human airway epithelial cells. A second parameter, the percent association, provides quantified data on the colocalization of the bacteria with a labeled component, including bacteria within a labeled tissue. The utility of quantifying the bacteria associated with the cell cytoplasm was demonstrated with Neisseria gonorrhoeae biofilms grown on cervical epithelial cells. This algorithm provides more flexibility and quantitative ability to researchers studying biofilms grown on a variety of irregular substrata. PMID:24632515

  17. Plasma-Mediated Inactivation of Pseudomonas aeruginosa Biofilms Grown on Borosilicate Surfaces under Continuous Culture System

    PubMed Central

    Vandervoort, Kurt G.; Brelles-Mariño, Graciela

    2014-01-01

    Biofilms are microbial communities attached to a surface and embedded in a matrix composed of exopolysaccharides and excreted nucleic acids. Bacterial biofilms are responsible for undesirable effects such as disease, prostheses colonization, biofouling, equipment damage, and pipe plugging. Biofilms are also more resilient than free-living cells to regular sterilization methods and therefore it is indispensable to develop better ways to control and remove them. The use of gas discharge plasmas is a good alternative since plasmas contain a mixture of reactive agents well-known for their decontamination potential against free microorganisms. We have previously reported that Pseudomonas aeruginosa biofilms were inactivated after a 1-min plasma exposure. We determined that the adhesiveness and the thickness of Pseudomonas biofilms grown on borosilicate were reduced. We also reported sequential morphological changes and loss of viability upon plasma treatment. However, the studies were carried out in batch cultures. The use of a continuous culture results in a more homogenous environment ensuring reproducible biofilm growth. The aim of this work was to study plasma-mediated inactivation of P. aeruginosa biofilms grown on borosilicate in a continuous culture system. In this paper we show that biofilms grown on glass under continuous culture can be inactivated by using gas discharge plasma. Both biofilm architecture and cell culturabilty are impacted by the plasma treatment. The inactivation kinetics is similar to previously described ones and cells go through sequential changes ranging from minimal modification without loss of viability at short plasma exposure times, to major structure and viability loss at longer exposure times. We report that changes in biofilm structure leading to the loss of culturability and viability are related to a decrease of the biofilm matrix adhesiveness. To our knowledge, there has been no attempt to evaluate the inactivation

  18. Sublimation process and physical properties of vapor grown γ-In2Se3 platelet crystals

    NASA Astrophysics Data System (ADS)

    Ajayakumar, C. J.; Kunjomana, A. G.

    2016-11-01

    Indium selenide (γ-In2Se3) crystals have been grown by the closed tube sublimation process in the absence of seed crystals and chemical transporting agents. The composition, structure and morphology of the samples grown under different vacuum conditions were examined by energy dispersive analysis, X-ray diffraction, and scanning electron microscope. Structural features of the crystals obtained in a vacuum of 10-3 mbar exhibited a few reflections not belonging to γ phase, whereas X-ray diffraction spectra of the crystals deposited under a vacuum of 10-6 mbar revealed evidence of sharp peaks with high intensities of γ-In2Se3 crystalline phase. When growth runs were performed for 72 h, voids were observed on the surface whereas for a duration of 120 h, platelet crystals were obtained. Optical properties of these samples were investigated using the FT-IR and photoluminescence spectroscopy. The average transmittance of the platelets in the visible and near infrared region of solar spectrum was found to be ∼81% and an optical band gap of ∼2.05 eV was computed from the transmission spectrum. Photoluminescence spectra of the grown In2Se3 crystals recorded at room temperature using an excitation laser of wavelength 355 nm showed a peak in the near band edge emission (NBE) corresponding to an energy of 2.01 eV. Under an illumination power of 12 mW/cm2, the photocurrent increased linearly with applied voltage and the dark current was found to be 2.5×10-9 A for 10 V. These results suggest that the as-grown γ-In2Se3 platelets crystallized from vapor deposition, possess superior optoelectronic properties than the other phases for solar cell applications.

  19. Plasma-mediated inactivation of Pseudomonas aeruginosa biofilms grown on borosilicate surfaces under continuous culture system.

    PubMed

    Vandervoort, Kurt G; Brelles-Mariño, Graciela

    2014-01-01

    Biofilms are microbial communities attached to a surface and embedded in a matrix composed of exopolysaccharides and excreted nucleic acids. Bacterial biofilms are responsible for undesirable effects such as disease, prostheses colonization, biofouling, equipment damage, and pipe plugging. Biofilms are also more resilient than free-living cells to regular sterilization methods and therefore it is indispensable to develop better ways to control and remove them. The use of gas discharge plasmas is a good alternative since plasmas contain a mixture of reactive agents well-known for their decontamination potential against free microorganisms. We have previously reported that Pseudomonas aeruginosa biofilms were inactivated after a 1-min plasma exposure. We determined that the adhesiveness and the thickness of Pseudomonas biofilms grown on borosilicate were reduced. We also reported sequential morphological changes and loss of viability upon plasma treatment. However, the studies were carried out in batch cultures. The use of a continuous culture results in a more homogenous environment ensuring reproducible biofilm growth. The aim of this work was to study plasma-mediated inactivation of P. aeruginosa biofilms grown on borosilicate in a continuous culture system. In this paper we show that biofilms grown on glass under continuous culture can be inactivated by using gas discharge plasma. Both biofilm architecture and cell culturability are impacted by the plasma treatment. The inactivation kinetics is similar to previously described ones and cells go through sequential changes ranging from minimal modification without loss of viability at short plasma exposure times, to major structure and viability loss at longer exposure times. We report that changes in biofilm structure leading to the loss of culturability and viability are related to a decrease of the biofilm matrix adhesiveness. To our knowledge, there has been no attempt to evaluate the inactivation

  20. High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC

    NASA Technical Reports Server (NTRS)

    Tang, S. M.; Berry, W. B.; Kwor, R.; Zeller, M. V.; Matus, L. G.

    1990-01-01

    Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.