Laser printing of 3D metallic interconnects

NASA Astrophysics Data System (ADS)

Beniam, Iyoel; Mathews, Scott A.; Charipar, Nicholas A.; Auyeung, Raymond C. Y.; Piqué, Alberto

2016-04-01

The use of laser-induced forward transfer (LIFT) techniques for the printing of functional materials has been demonstrated for numerous applications. The printing gives rise to patterns, which can be used to fabricate planar interconnects. More recently, various groups have demonstrated electrical interconnects from laser-printed 3D structures. The laser printing of these interconnects takes place through aggregation of voxels of either molten metal or of pastes containing dispersed metallic particles. However, the generated 3D structures do not posses the same metallic conductivity as a bulk metal interconnect of the same cross-section and length as those formed by wire bonding or tab welding. An alternative is to laser transfer entire 3D structures using a technique known as lase-and-place. Lase-and-place is a LIFT process whereby whole components and parts can be transferred from a donor substrate onto a desired location with one single laser pulse. This paper will describe the use of LIFT to laser print freestanding, solid metal foils or beams precisely over the contact pads of discrete devices to interconnect them into fully functional circuits. Furthermore, this paper will also show how the same laser can be used to bend or fold the bulk metal foils prior to transfer, thus forming compliant 3D structures able to provide strain relief for the circuits under flexing or during motion from thermal mismatch. These interconnect "ridges" can span wide gaps (on the order of a millimeter) and accommodate height differences of tens of microns between adjacent devices. Examples of these laser printed 3D metallic bridges and their role in the development of next generation electronics by additive manufacturing will be presented.

Determination of interfacial adhesion strength between oxide scale and substrate for metallic SOFC interconnects

NASA Astrophysics Data System (ADS)

Sun, X.; Liu, W. N.; Stephens, E.; Khaleel, M. A.

The interfacial adhesion strength between the oxide scale and the substrate is crucial to the reliability and durability of metallic interconnects in solid oxide fuel cell (SOFC) operating environments. It is necessary, therefore, to establish a methodology to quantify the interfacial adhesion strength between the oxide scale and the metallic interconnect substrate, and furthermore to design and optimize the interconnect material as well as the coating materials to meet the design life of an SOFC system. In this paper, we present an integrated experimental/analytical methodology for quantifying the interfacial adhesion strength between the oxide scale and a ferritic stainless steel interconnect. Stair-stepping indentation tests are used in conjunction with subsequent finite element analyses to predict the interfacial strength between the oxide scale and Crofer 22 APU substrate.

Interconnect Between a Waveguide and a Dielectric Waveguide Comprising an Impedance Matched Dielectric Lens

NASA Technical Reports Server (NTRS)

Decrossas, Emmanuel (Inventor); Chattopadhyay, Goutam (Inventor); Chahat, Nacer (Inventor); Tang, Adrian J. (Inventor)

2016-01-01

A lens for interconnecting a metallic waveguide with a dielectric waveguide is provided. The lens may be coupled a metallic waveguide and a dielectric waveguide, and minimize a signal loss between the metallic waveguide and the dielectric waveguide.

Effect of Interfacial characteristics of metal clad polymeric substrates on electrical high frequency interconnection performance

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Romanofsky, R. R.; Ponchak, G. E.; Liu, D. C.

1984-01-01

Etched metallic conductor lines on metal clad polymeric substrates are used for electronic component interconnections. Significant signal losses are observed for microstrip conductor lines used for interconnecting high frequency devices. At these frequencies, the electronic signal travels closer to the metal-polymer interface due to the skin effect. Copper-teflon interfaces were characterized by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to determine the interfacial properties. Data relating roughness of the copper film to signal losses was compared to theory. Films used to enhance adhesion are found, to contribute to these losses.

An Interconnected Network of Core-Forming Melts Produced by Shear Deformation

NASA Technical Reports Server (NTRS)

Bruhn, D.; Groebner, N.; Kohlstedt, D. L.

2000-01-01

The formation mechanism of terrestrial planetary is still poorly understood, and has been the subject of numerous experimental studies. Several mechanisms have been proposed by which metal-mainly iron with some nickel-could have been extracted from a silicate mantle to form the core. Most recent models involve gravitational sinking of molten metal or metal sulphide through a partially or fully molten mantle that is often referred to as a'magma ocean. Alternative models invoke percolation of molten metal along an interconnected network (that is, porous flow) through a solid silicate matrix. But experimental studies performed at high pressures have shown that, under hydrostatic conditions, these melts do not form an interconnected network, leading to the widespread assumption that formation of metallic cores requires a magma ocean. In contrast, here we present experiments which demonstrate that shear deformation to large strains can interconnect a significant fraction of initially isolated pockets of metal and metal sulphide melts in a solid matrix of polycrystalline olivine. Therefore, in a dynamic (nonhydrostatic) environment, percolation remains a viable mechanism for the segregation and migration of core-forming melts in a solid silicate mantle.

Super-stretchable metallic interconnects on polymer with a linear strain of up to 100%

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arafat, Yeasir; Dutta, Indranath; Panat, Rahul, E-mail: Rahul.panat@wsu.edu

Metal interconnects in flexible and wearable devices are heterogeneous metal-polymer systems that are expected to sustain large deformation without failure. The principal strategy to make strain tolerant interconnect lines on flexible substrates has comprised of creating serpentine structures of metal films with either in-plane or out-of-plane waves, using porous substrates, or using highly ductile materials such as gold. The wavy and helical serpentine patterns preclude high-density packing of interconnect lines on devices, while ductile materials such as Au are cost prohibitive for real world applications. Ductile copper films can be stretched if bonded to the substrate, but show high levelmore » of cracking beyond few tens of % strain. In this paper, we demonstrate a material system consisting of Indium metal film over an elastomer (PDMS) with a discontinuous Cr layer such that the metal interconnect can be stretched to extremely high linear strain (up to 100%) without any visible cracks. Such linear strain in metal interconnects exceeds that reported in literature and is obtained without the use of any geometrical manipulations or porous substrates. Systematic experimentation is carried out to explain the mechanisms that allow the Indium film to sustain the high strain level without failure. The islands forming the discontinuous Cr layer are shown to move apart from each other during stretching without delamination, providing strong adhesion to the Indium film while accommodating the large strain in the system. The Indium film is shown to form surface wrinkles upon release from the large strain, confirming its strong adhesion to PDMS. A model is proposed based upon the observations that can explain the high level of stretch-ability of the Indium metal film over the PDMS substrate.« less

Laser printed interconnects for flexible electronics

NASA Astrophysics Data System (ADS)

Pique, Alberto; Beniam, Iyoel; Mathews, Scott; Charipar, Nicholas

Laser-induced forward transfer (LIFT) can be used to generate microscale 3D structures for interconnect applications non-lithographically. The laser printing of these interconnects takes place through aggregation of voxels of either molten metal or dispersed metallic nanoparticles. However, the resulting 3D structures do not achieve the bulk conductivity of metal interconnects of the same cross-section and length as those formed by wire bonding or tab welding. It is possible, however, to laser transfer entire structures using a LIFT technique known as lase-and-place. Lase-and-place allows whole components and parts to be transferred from a donor substrate onto a desired location with one single laser pulse. This talk will present the use of LIFT to laser print freestanding solid metal interconnects to connect individual devices into functional circuits. Furthermore, the same laser can bend or fold the thin metal foils prior to transfer, thus forming compliant 3D structures able to provide strain relief due to flexing or thermal mismatch. Examples of these laser printed 3D metallic bridges and their role in the development of next generation flexible electronics by additive manufacturing will be presented. This work was funded by the Office of Naval Research (ONR) through the Naval Research Laboratory Basic Research Program.

All ceramic structure for molten carbonate fuel cell

DOEpatents

Smith, James L.; Kucera, Eugenia H.

1992-01-01

An all-ceramic molten carbonate fuel cell having a composition formed of a multivalent metal oxide or oxygenate such as an alkali metal, transition metal oxygenate. The structure includes an anode and cathode separated by an electronically conductive interconnect. The electrodes and interconnect are compositions ceramic materials. Various combinations of ceramic compositions for the anode, cathode and interconnect are disclosed. The fuel cell exhibits stability in the fuel gas and oxidizing environments. It presents reduced sealing and expansion problems in fabrication and has improved long-term corrosion resistance.

Automated brush plating process for solid oxide fuel cells

DOEpatents

Long, Jeffrey William

2003-01-01

A method of depositing a metal coating (28) on the interconnect (26) of a tubular, hollow fuel cell (10) contains the steps of providing the fuel cell (10) having an exposed interconnect surface (26); contacting the inside of the fuel cell (10) with a cathode (45) without use of any liquid materials; passing electrical current through a contacting applicator (46) which contains a metal electrolyte solution; passing the current from the applicator (46) to the cathode (45) and contacting the interconnect (26) with the applicator (46) and coating all of the exposed interconnect surface.

Thin-film chip-to-substrate interconnect and methods for making same

DOEpatents

Tuckerman, David B.

1991-01-01

Integrated circuit chips are electrically connected to a silica wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin metal lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability.

An interconnected network of core-forming melts produced by shear deformation

PubMed

Bruhn; Groebner; Kohlstedt

2000-02-24

The formation mechanism of terrestrial planetary cores is still poorly understood, and has been the subject of numerous experimental studies. Several mechanisms have been proposed by which metal--mainly iron with some nickel--could have been extracted from a silicate mantle to form the core. Most recent models involve gravitational sinking of molten metal or metal sulphide through a partially or fully molten mantle that is often referred to as a 'magma ocean'. Alternative models invoke percolation of molten metal along an interconnected network (that is, porous flow) through a solid silicate matrix. But experimental studies performed at high pressures have shown that, under hydrostatic conditions, these melts do not form an interconnected network, leading to the widespread assumption that formation of metallic cores requires a magma ocean. In contrast, here we present experiments which demonstrate that shear deformation to large strains can interconnect a significant fraction of initially isolated pockets of metal and metal sulphide melts in a solid matrix of polycrystalline olivine. Therefore, in a dynamic (non-hydrostatic) environment, percolation remains a viable mechanism for the segregation and migration of core-forming melts in a solid silicate mantle.

Performance of Topological Insulator Interconnects

NASA Astrophysics Data System (ADS)

Philip, Timothy M.; Hirsbrunner, Mark R.; Park, Moon Jip; Gilbert, Matthew J.

2017-01-01

The poor performance of copper interconnects at the nanometer scale calls for new material solutions for continued scaling of integrated circuits. We propose the use of three dimensional time-reversal-invariant topological insulators (TIs), which host backscattering-protected surface states, for this purpose. Using semiclassical methods, we demonstrate that nanoscale TI interconnects have a resistance 1-3 orders of magnitude lower than copper interconnects and graphene nanoribbons at the nanometer scale. We use the nonequilibrium Green function (NEGF) formalism to measure the change in conductance of nanoscale TI and metal interconnects caused by the presence of impurity disorder. We show that metal interconnects suffer a resistance increase, relative to the clean limit, in excess of 500% due to disorder while the TI's surface states increase less than 35% in the same regime.

Stretchable multilayer self-aligned interconnects fabricated using excimer laser photoablation and in situ masking

NASA Astrophysics Data System (ADS)

Lin, Kevin L.; Jain, Kanti

2009-02-01

Stretchable interconnects are essential to large-area flexible circuits and large-area sensor array systems, and they play an important role towards the realization of the realm of systems which include wearable electronics, sensor arrays for structural health monitoring, and sensor skins for tactile feedback. These interconnects must be reliable and robust for viability, and must be flexible, stretchable, and conformable to non-planar surfaces. This research describes the design, modeling, fabrication, and testing of stretchable interconnects on polymer substrates using metal patterns both as functional interconnect layers and as in-situ masks for excimer laser photoablation. Excimer laser photoablation is often used for patterning of polymers and thin-film metals. The fluences for photoablation of polymers are generally much lower than the threshold fluence for removal or damage of high-thermallyconductive metals; thus, metal thin films can be used as in-situ masks for polymers if the proper fluence is used. Selfaligned single-layer and multi-layer interconnects of various designs (rectilinear and 'meandering') have been fabricated, and certain 'meandering' interconnect designs can be stretched up to 50% uniaxially while maintaining good electrical conductivity and structural integrity. These results are compared with Finite Element Analysis (FEA) models and are observed to be in good accordance with them. This fabrication approach eliminates masks and microfabrication processing steps as compared to traditional fabrication approaches; furthermore, this technology is scalable for large-area sensor arrays and electronic circuits, adaptable for a variety of materials and interconnects designs, and compatible with MEMS-based capacitive sensor technology.

Fast process flow, on-wafer interconnection and singulation for MEPV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Nielson, Gregory N.; Cruz-Campa, Jose Luis

2017-01-31

A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality ofmore » metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.« less

Fast process flow, on-wafer interconnection and singulation for MEPV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Nielson, Gregory N.; Cruz-Campa, Jose Luis

2017-08-29

A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality ofmore » metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.« less

TCAD Analysis of Heating and Maximum Current Density in Carbon Nanofiber Interconnects

DTIC Science & Technology

2011-09-01

a metallic MWCNT interconnect. From [20]. ....20  Figure 11.  Simple equivalent circuit model of a metallic MWCNT interconnect. From [20...Carbon Nanotube MWCNT Multi-Walled Carbon Nanotube SCU Santa Clara University Si Silicon SiO2 Silicon Dioxide SiC Silicon Carbide Au Gold...proven, multi-walled carbon nanotube ( MWCNT ) [2]. He later discovered single-walled carbon nanotubes (SWCNT) in 1993 [13]. Since Iijima’s discovery

Silicon Carbide Integrated Circuit Chip

NASA Image and Video Library

2015-02-17

A multilevel interconnect silicon carbide integrated circuit chip with co-fired ceramic package and circuit board recently developed at the NASA GRC Smart Sensors and Electronics Systems Branch for high temperature applications. High temperature silicon carbide electronics and compatible packaging technologies are elements of instrumentation for aerospace engine control and long term inner-solar planet explorations.

Time skewing and amplitude nonlinearity mitigation by feedback equalization for 56 Gbps VCSEL-based PAM-4 links

NASA Astrophysics Data System (ADS)

You, Yue; Zhang, Wenjia; Sun, Lin; Du, Jiangbing; Liang, Chenyu; Yang, Fan; He, Zuyuan

2018-03-01

The vertical cavity surface emitting laser (VCSEL)-based multimode optical transceivers enabled by pulse amplitude modulation (PAM)-4 will be commercialized in near future to meet the 400-Gbps standard short reach optical interconnects. It is still challenging to achieve over 56/112-Gbps with the multilevel signaling as the multimode property of the device and link would introduce the nonlinear temporal response for the different levels. In this work, we scrutinize the distortions that relates to the multilevel feature of PAM-4 modulation, and propose an effective feedback equalization scheme for 56-Gbps VCSEL-based PAM-4 optical interconnects system to mitigate the distortions caused by eye timing-skew and nonlinear power-dependent noise. Level redistribution at Tx side is theoretically modeled and constructed to achieve equivalent symbol error ratios (SERs) of four levels and improved BER performance. The cause of the eye skewing and the mitigation approach are also simulated at 100-Gbps and experimentally investigated at 56-Gbps. The results indicate more than 2-dB power penalty improvement has been achieved by using such a distortion aware equalizer.

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun

2015-05-04

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrownmore » n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.« less

Chemical-mechanical polishing of metal and dielectric films for microelectronic applications

NASA Astrophysics Data System (ADS)

Hegde, Sharath

The demand for smaller, faster devices has led the integrated circuit (IC) industry to continually increase the device density on a chip while simultaneously reducing feature dimensions. Copper interconnects and multilevel metallization (MLM) schemes were introduced to meet some of these challenges. With the employment of MLM in the ultra-large-scale-integrated (ULSI) circuit fabrication technology, repeated planarization of different surface layers with tolerance of a few nanometers is required. Presently, chemical-mechanical planarization (CMP) is the only technique that can meet this requirement. Damascene and shallow trench isolation processes are currently used in conjunction with CMP in the fabrication of multilevel copper interconnects and isolation of devices, respectively, for advanced logic and memory devices. These processes, at some stage, require simultaneous polishing of two different materials using a single slurry that offers high polish rates, high polish selectivity to one material over the other and good post-polish surface finish. Slurries containing one kind of abrasive particles do not meet most of these demands due mainly to the unique physical and chemical properties of each abrasive. However, if a composite particle is formed that takes the advantages of different abrasives while mitigating their disadvantages, the CMP performance of resulting abrasives would be compelling. It is demonstrated that electrostatic interactions between ceria and silica particles at pH 4 can be used to produce composite particles with enhanced functionality. Zeta potential measurement and TEM images used for particle characterization show the presence of such composite particles with smaller shell particles attached onto larger core particles. Slurries containing ceria (core)/silica (shell) and silica (core)/ceria (shell) composite particles when used to polish metal and dielectric films, respectively, yield both enhanced metal and dielectric film removal rates and better post-polish surface roughness values compared to those containing single kind of particles. Several arguments are proposed to explain the enhanced CMP performance with the composite abrasives. The effect of surface charge of the composite abrasive and the hardness of the core particles in the composite abrasives contained in the polishing slurry on polish rates of different films is discussed. Also, as a part of this thesis, several issues related to CMP were addressed. The planarization ability of Cu CMP slurry containing alumina coated silica particles was studied to elucidate the role of pattern geometry in affecting polish rate and also generating pattern dependent defects like dishing and erosion. Additionally, a polishing process was devised which, when viewed with the optical profilometer, eliminated surface defects including shallow and deep scratches and pits already present in a copper film. Also, molybdenum dioxide (MoO2) was evaluated as a potential abrasive for a highly reactive copper CMP slurry with potassium iodate as the oxidizing agent. Finally, the interaction of amino acid additives in ceria slurries with the silicon nitride film during STI CMP is discussed. Directions for future work have been presented at the end of the thesis.

Design guidelines for advanced LSI microcircuit packaging using thick film multilayer technology

NASA Technical Reports Server (NTRS)

Peckinpaugh, C. J.

1974-01-01

Ceramic multilayer circuitry results from the sequential build-up of two or more layers of pre-determined conductive interconnections separated by dielectric layers and fired at an elevated temperature to form a solidly fused structure. The resultant ceramic interconnect matrix is used as a base to mount active and passive devices and provide the necessary electrical interconnection to accomplish the desired electrical circuit. Many methods are known for developing multilevel conductor mechanisms such as multilayer printed circuits, welded wire matrices, flexible copper tape conductors, and thin and thick-film ceramic multilayers. Each method can be considered as a specialized field with each possessing its own particular set of benefits and problems. This design guide restricts itself to the art of design, fabrication and assembly of ceramic multilayer circuitry and the reliability of the end product.

A 1 GHz integrated circuit with carbon nanotube interconnects and silicon transistors.

PubMed

Close, Gael F; Yasuda, Shinichi; Paul, Bipul; Fujita, Shinobu; Wong, H-S Philip

2008-02-01

Due to their excellent electrical properties, metallic carbon nanotubes are promising materials for interconnect wires in future integrated circuits. Simulations have shown that the use of metallic carbon nanotube interconnects could yield more energy efficient and faster integrated circuits. The next step is to build an experimental prototype integrated circuit using carbon nanotube interconnects operating at high speed. Here, we report the fabrication of the first stand-alone integrated circuit combining silicon transistors and individual carbon nanotube interconnect wires on the same chip operating above 1 GHz. In addition to setting a milestone by operating above 1 GHz, this prototype is also a tool to investigate carbon nanotubes on a silicon-based platform at high frequencies, paving the way for future multi-GHz nanoelectronics.

Bipolar plating of metal contacts onto oxide interconnection for solid oxide electrochemical cell

DOEpatents

Isenberg, A.O.

1987-03-10

Disclosed is a method of forming an adherent metal deposit on a conducting layer of a tube sealed at one end. The tube is immersed with the sealed end down into an aqueous solution containing ions of the metal to be deposited. An ionically conducting aqueous fluid is placed inside the tube and a direct current is passed from a cathode inside the tube to an anode outside the tube. Also disclosed is a multi-layered solid oxide fuel cell tube which consists of an inner porous ceramic support tube, a porous air electrode covering the support tube, a non-porous electrolyte covering a portion of the air electrode, a non-porous conducting interconnection covering the remaining portion of the electrode, and a metal deposit on the interconnection. 1 fig.

Bipolar plating of metal contacts onto oxide interconnection for solid oxide electrochemical cell

DOEpatents

Isenberg, Arnold O.

1987-01-01

Disclosed is a method of forming an adherent metal deposit on a conducting layer of a tube sealed at one end. The tube is immersed with the sealed end down into an aqueous solution containing ions of the metal to be deposited. An ionically conducting aqueous fluid is placed inside the tube and a direct current is passed from a cathode inside the tube to an anode outside the tube. Also disclosed is a multi-layered solid oxide fuel cell tube which consists of an inner porous ceramic support tube, a porous air electrode covering the support tube, a non-porous electrolyte covering a portion of the air electrode, a non-porous conducting interconnection covering the remaining portion of the electrode, and a metal deposit on the interconnection.

Thin-film chip-to-substrate interconnect and methods for making same

DOEpatents

Tuckerman, D.B.

1988-06-06

Integrated circuit chips are electrically connected to a silicon wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability. 6 figs.

Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

2015-01-01

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype ICs with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3-and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient.

Electro-optic techniques for VLSI interconnect

NASA Astrophysics Data System (ADS)

Neff, J. A.

1985-03-01

A major limitation to achieving significant speed increases in very large scale integration (VLSI) lies in the metallic interconnects. They are costly not only from the charge transport standpoint but also from capacitive loading effects. The Defense Advanced Research Projects Agency, in pursuit of the fifth generation supercomputer, is investigating alternatives to the VLSI metallic interconnects, especially the use of optical techniques to transport the information either inter or intrachip. As the on chip performance of VLSI continues to improve via the scale down of the logic elements, the problems associated with transferring data off and onto the chip become more severe. The use of optical carriers to transfer the information within the computer is very appealing from several viewpoints. Besides the potential for gigabit propagation rates, the conversion from electronics to optics conveniently provides a decoupling of the various circuits from one another. Significant gains will also be realized in reducing cross talk between the metallic routings, and the interconnects need no longer be constrained to the plane of a thin film on the VLSI chip. In addition, optics can offer an increased programming flexibility for restructuring the interconnect network.

Recent Development of SOFC Metallic Interconnect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu JW, Liu XB

2010-04-01

Interest in solid oxide fuel cells (SOFC) stems from their higher e±ciencies and lower levels of emitted pollu- tants, compared to traditional power production methods. Interconnects are a critical part in SOFC stacks, which connect cells in series electrically, and also separate air or oxygen at the cathode side from fuel at the anode side. Therefore, the requirements of interconnects are the most demanding, i:e:, to maintain high elec- trical conductivity, good stability in both reducing and oxidizing atmospheres, and close coe±cient of thermal expansion (CTE) match and good compatibility with other SOFC ceramic components. The paper reviewed the interconnectmore » materials, and coatings for metallic interconnect materials.« less

Scaling induced performance challenges/limitations of on-chip metal interconnects and comparisons with optical interconnects

NASA Astrophysics Data System (ADS)

Kapur, Pawan

The miniaturization paradigm for silicon integrated circuits has resulted in a tremendous cost and performance advantage. Aggressive shrinking of devices provides faster transistors and a greater functionality for circuit design. However, scaling induced smaller wire cross-sections coupled with longer lengths owing to larger chip areas, result in a steady deterioration of interconnects. This degradation in interconnect trends threatens to slow down the rapid growth along Moore's law. This work predicts that the situation is worse than anticipated. It shows that in the light of technology and reliability constraints, scaling induced increase in electron surface scattering, fractional cross section area occupied by the highly resistive barrier, and realistic interconnect operation temperature will lead to a significant rise in effective resistivity of modern copper based interconnects. We start by discussing various technology factors affecting copper resistivity. We, next, develop simulation tools to model these effects. Using these tools, we quantify the increase in realistic copper resistivity as a function of future technology nodes, under various technology assumptions. Subsequently, we evaluate the impact of these technology effects on delay and power dissipation of global signaling interconnects. Modern long on-chip wires use repeaters, which dramatically improves their delay and bandwidth. We quantify the repeated wire delays and power dissipation using realistic resistance trends at future nodes. With the motivation of reducing power, we formalize a methodology, which trades power with delay very efficiently for repeated wires. Using this method, we find that although the repeater power comes down, the total power dissipation due to wires is still found to be very large at future nodes. Finally, we explore optical interconnects as a possible substitute, for specific interconnect applications. We model an optical receiver and waveguides. Using this we assess future optical system performance. Finally, we compare the delay and power of future metal interconnects with that of optical interconnects for global signaling application. We also compare the power dissipation of the two approaches for an upper level clock distribution application. We find that for long on-chip communication links, optical interconnects have lower latencies than future metal interconnects at comparable levels of power dissipation.

Stress redistribution and damage in interconnects caused by electromigration

NASA Astrophysics Data System (ADS)

Chiras, Stefanie Ruth

Electromigration has long been recognized as a phenomenon that induces mass redistribution in metals which, when constrained, can lead to the creation of stress. Since the development of the integrated circuit, electromigration. in interconnects, (the metal lines which carry current between devices in integrated circuits), has become a reliability concern. The primary failure mechanism in the interconnects is usually voiding, which causes electrical resistance increases in the circuit. In some cases, however, another failure mode occurs, fracture of the surrounding dielectric driven by electromigration induced compressive stresses within the interconnect. It is this failure mechanism that is the focus of this thesis. To study dielectric fracture, both residual processing stresses and the development of electromigration induced stress in isolated, constrained interconnects was measured. The high-resolution measurements were made using two types of piezospectroscopy, complemented by finite element analysis (FEA). Both procedures directly measured stress in the underlying or neighboring substrate and used FEA to determine interconnect stresses. These interconnect stresses were related to the effected circuit failure mode through post-test scanning electron microscopy and resistance measurements taken during electromigration testing. The results provide qualitative evidence of electromigration driven passivation fracture, and quantitative analysis of the theoretical model of the failure, the "immortal" interconnect concept.

Electrochemical planarization

DOEpatents

Bernhardt, A.F.; Contolini, R.J.

1993-10-26

In a process for fabricating planarized thin film metal interconnects for integrated circuit structures, a planarized metal layer is etched back to the underlying dielectric layer by electropolishing, ion milling or other procedure. Electropolishing reduces processing time from hours to minutes and allows batch processing of multiple wafers. The etched back planarized thin film interconnect is flush with the dielectric layer. 12 figures.

Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

2015-01-01

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype IC's with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3- and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient. Improved reproducibility remains to be accomplished.

Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application

NASA Astrophysics Data System (ADS)

Wu, Facai; Si, Shuyao; Shi, Tuo; Zhao, Xiaolong; Liu, Qi; Liao, Lei; Lv, Hangbing; Long, Shibing; Liu, Ming

2018-02-01

Pt/SiO2:metal nanoparticles/Pt sandwich structure is fabricated with the method of metal ion (Ag) implantation. The device exhibits multilevel storage with appropriate R off/R on ratio, good endurance and retention properties. Based on transmission electron microscopy and energy dispersive spectrometer analysis, we confirm that Pt nanoparticles are spurted into SiO2 film from Pt bottom electrode by Ag implantation; during electroforming, the local electric field can be enhanced by these Pt nanoparticles, meanwhile the Ag nanoparticles constantly migrate toward the Pt nanoparticles. The implantation induced nanoparticles act as trap sites in the resistive switching layer and play critical roles in the multilevel storage, which is evidenced by the negative differential resistance effect in the current-voltage (I-V) measurements.

College of DuPage Planning Process: College of DuPage Planning, the Foundation for Decision Making.

ERIC Educational Resources Information Center

College of DuPage, Glen Ellyn, IL. Office of Research and Planning.

At College of DuPage (CD), in Glen Ellyn, Illinois, institutional planning is a multi-level, on-going process involving continuous college-wide input. The nine schematic levels in the CD planning process are interconnected and progress from global and broad-based issues, answering such questions as why the college exists, to concrete levels…

Mapping the global journey of anthropogenic aluminum: a trade-linked multilevel material flow analysis.

PubMed

Liu, Gang; Müller, Daniel B

2013-10-15

Material cycles have become increasingly coupled and interconnected in a globalizing era. While material flow analysis (MFA) has been widely used to characterize stocks and flows along technological life cycle within a specific geographical area, trade networks among individual cycles have remained largely unexplored. Here we developed a trade-linked multilevel MFA model to map the contemporary global journey of anthropogenic aluminum. We demonstrate that the anthropogenic aluminum cycle depends substantially on international trade of aluminum in all forms and becomes highly interconnected in nature. While the Southern hemisphere is the main primary resource supplier, aluminum production and consumption concentrate in the Northern hemisphere, where we also find the largest potential for recycling. The more developed countries tend to have a substantial and increasing presence throughout the stages after bauxite refining and possess highly consumption-based cycles, thus maintaining advantages both economically and environmentally. A small group of countries plays a key role in the global redistribution of aluminum and in the connectivity of the network, which may render some countries vulnerable to supply disruption. The model provides potential insights to inform government and industry policies in resource criticality, supply chain security, value chain management, and cross-boundary environmental impacts mitigation.

Photolithography-Based Patterning of Liquid Metal Interconnects for Monolithically Integrated Stretchable Circuits.

PubMed

Park, Chan Woo; Moon, Yu Gyeong; Seong, Hyejeong; Jung, Soon Won; Oh, Ji-Young; Na, Bock Soon; Park, Nae-Man; Lee, Sang Seok; Im, Sung Gap; Koo, Jae Bon

2016-06-22

We demonstrate a new patterning technique for gallium-based liquid metals on flat substrates, which can provide both high pattern resolution (∼20 μm) and alignment precision as required for highly integrated circuits. In a very similar manner as in the patterning of solid metal films by photolithography and lift-off processes, the liquid metal layer painted over the whole substrate area can be selectively removed by dissolving the underlying photoresist layer, leaving behind robust liquid patterns as defined by the photolithography. This quick and simple method makes it possible to integrate fine-scale interconnects with preformed devices precisely, which is indispensable for realizing monolithically integrated stretchable circuits. As a way for constructing stretchable integrated circuits, we propose a hybrid configuration composed of rigid device regions and liquid interconnects, which is constructed on a rigid substrate first but highly stretchable after being transferred onto an elastomeric substrate. This new method can be useful in various applications requiring both high-resolution and precisely aligned patterning of gallium-based liquid metals.

Viewing Integrated-Circuit Interconnections By SEM

NASA Technical Reports Server (NTRS)

Lawton, Russel A.; Gauldin, Robert E.; Ruiz, Ronald P.

1990-01-01

Back-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.

Oxidation Resistant, Cr Retaining, Electrically Conductive Coatings on Metallic Alloys for SOFC Interconnects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vladimir Gorokhovsky

2008-03-31

This report describes significant results from an on-going, collaborative effort to enable the use of inexpensive metallic alloys as interconnects in planar solid oxide fuel cells (SOFCs) through the use of advanced coating technologies. Arcomac Surface Engineering, LLC, under the leadership of Dr. Vladimir Gorokhovsky, is investigating filtered-arc and filtered-arc plasma-assisted hybrid coating deposition technologies to promote oxidation resistance, eliminate Cr volatility, and stabilize the electrical conductivity of both standard and specialty steel alloys of interest for SOFC metallic interconnect (IC) applications. Arcomac has successfully developed technologies and processes to deposit coatings with excellent adhesion, which have demonstrated a substantialmore » increase in high temperature oxidation resistance, stabilization of low Area Specific Resistance values and significantly decrease Cr volatility. An extensive matrix of deposition processes, coating compositions and architectures was evaluated. Technical performance of coated and uncoated sample coupons during exposures to SOFC interconnect-relevant conditions is discussed, and promising future directions are considered. Cost analyses have been prepared based on assessment of plasma processing parameters, which demonstrate the feasibility of the proposed surface engineering process for SOFC metallic IC applications.« less

SEM evaluation of metallization on semiconductors. [Scanning Electron Microscope

NASA Technical Reports Server (NTRS)

Fresh, D. L.; Adolphsen, J. W.

1974-01-01

A test method for the evaluation of metallization on semiconductors is presented and discussed. The method has been prepared in MIL-STD format for submittal as a proposed addition to MIL-STD-883. It is applicable to discrete devices and to integrated circuits and specifically addresses batch-process oriented defects. Quantitative accept/reject criteria are given for contact windows, other oxide steps, and general interconnecting metallization. Figures are provided that illustrate typical types of defects. Apparatus specifications, sampling plans, and specimen preparation and examination requirements are described. Procedures for glassivated devices and for multi-metal interconnection systems are included.

Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, Kota, E-mail: kotaito@mosk.tytlabs.co.jp; Nishikawa, Kazutaka; Iizuka, Hideo

Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

Highly conductive metal interconnects on three-dimensional objects fabricated with omnidirectional ink jet printing technology

NASA Astrophysics Data System (ADS)

Yoshida, Yasunori; Wada, Hikaru; Izumi, Konami; Tokito, Shizuo

2017-05-01

In this work, we demonstrate that highly conductive metal interconnects can be fabricated on the surface of three-dimensional objects using “omnidirectional ink jet” (OIJ) printing technology. OIJ printing technology makes it possible to perform ink jet printing in all directions by combining the motion of a 6-axis vertically articulated robot with precise positioning and a thermal drying process, which allows for the printing of stacked layers. By using OIJ technology, we were the first to successfully fabricate printed interconnect layers having a very low electrical resistance of 12 mΩ over a 10 mm length. Moreover, the results of the high-current test demonstrated that the printed interconnects can withstand high-current-flow of 5 A for 30 min or more.

Effects of PCB Pad Metal Finishes on the Cu-Pillar/Sn-Ag Micro Bump Joint Reliability of Chip-on-Board (COB) Assembly

NASA Astrophysics Data System (ADS)

Kim, Youngsoon; Lee, Seyong; Shin, Ji-won; Paik, Kyung-Wook

2016-06-01

While solder bumps have been used as the bump structure to form the interconnection during the last few decades, the continuing scaling down of devices has led to a change in the bump structure to Cu-pillar/Sn-Ag micro-bumps. Cu-pillar/Sn-Ag micro-bump interconnections differ from conventional solder bump interconnections in terms of their assembly processing and reliability. A thermo-compression bonding method with pre-applied b-stage non-conductive films has been adopted to form solder joints between Cu pillar/Sn-Ag micro bumps and printed circuit board vehicles, using various pad metal finishes. As a result, various interfacial inter-metallic compounds (IMCs) reactions and stress concentrations occur at the Cu pillar/Sn-Ag micro bumps joints. Therefore, it is necessary to investigate the influence of pad metal finishes on the structural reliability of fine pitch Cu pillar/Sn-Ag micro bumps flip chip packaging. In this study, four different pad surface finishes (Thin Ni ENEPIG, OSP, ENEPIG, ENIG) were evaluated in terms of their interconnection reliability by thermal cycle (T/C) test up to 2000 cycles at temperatures ranging from -55°C to 125°C and high-temperature storage test up to 1000 h at 150°C. The contact resistances of the Cu pillar/Sn-Ag micro bump showed significant differences after the T/C reliability test in the following order: thin Ni ENEPIG > OSP > ENEPIG where the thin Ni ENEPIG pad metal finish provided the best Cu pillar/Sn-Ag micro bump interconnection in terms of bump joint reliability. Various IMCs formed between the bump joint areas can account for the main failure mechanism.

Metallic Nanowire Interconnections for Integrated Circuit Fabrication

NASA Technical Reports Server (NTRS)

Ng, Hou Tee (Inventor); Li, Jun (Inventor); Meyyappan, Meyya (Inventor)

2007-01-01

A method for fabricating an electrical interconnect between two or more electrical components. A conductive layer is provided on a substarte and a thin, patterned catalyst array is deposited on an exposed surface of the conductive layer. A gas or vapor of a metallic precursor of a metal nanowire (MeNW) is provided around the catalyst array, and MeNWs grow between the conductive layer and the catalyst array. The catalyst array and a portion of each of the MeNWs are removed to provide exposed ends of the MeNWs.

Advanced optical network architecture for integrated digital avionics

NASA Astrophysics Data System (ADS)

Morgan, D. Reed

1996-12-01

For the first time in the history of avionics, the network designer now has a choice in selecting the media that interconnects the sources and sinks of digital data on aircraft. Electrical designs are already giving way to photonics in application areas where the data rate times distance product is large or where special design requirements such as low weight or EMI considerations are critical. Future digital avionic architectures will increasingly favor the use of photonic interconnects as network data rates of one gigabit/second and higher are needed to support real-time operation of high-speed integrated digital processing. As the cost of optical network building blocks is reduced and as temperature-rugged laser sources are matured, metal interconnects will be forced to retreat to applications spanning shorter and shorter distances. Although the trend is already underway, the widespread use of digital optics will first occur at the system level, where gigabit/second, real-time interconnects between sensors, processors, mass memories and displays separated by a least of few meters will be required. The application of photonic interconnects for inter-printed wiring board signalling across the backplane will eventually find application for gigabit/second applications since signal degradation over copper traces occurs before one gigabit/second and 0.5 meters are reached. For the foreseeable future however, metal interconnects will continue to be used to interconnect devices on printed wiring boards since 5 gigabit/second signals can be sent over metal up to around 15 centimeters. Current-day applications of optical interconnects at the system level are described and a projection of how advanced optical interconnect technology will be driven by the use of high speed integrated digital processing on future aircraft is presented. The recommended advanced network for application in the 2010 time frame is a fiber-based system with a signalling speed of around 2-3 gigabits per second. This switch-based unified network will interconnect sensors, displays, mass memory and controls and displays to computer modules within the processing complex. The characteristics of required building blocks needed for the future are described. These building blocks include the fiber, an optical switch, a laser-based transceiver, blind-mate connectors and an optical backplane.

LLMapReduce: Multi-Level Map-Reduce for High Performance Data Analysis

DTIC Science & Technology

2016-05-23

LLMapReduce works with several schedulers such as SLURM, Grid Engine and LSF. Keywords—LLMapReduce; map-reduce; performance; scheduler; Grid Engine ...SLURM; LSF I. INTRODUCTION Large scale computing is currently dominated by four ecosystems: supercomputing, database, enterprise , and big data [1...interconnects [6]), High performance math libraries (e.g., BLAS [7, 8], LAPACK [9], ScaLAPACK [10]) designed to exploit special processing hardware, High

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

NASA Astrophysics Data System (ADS)

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

2017-11-01

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.

Compatibility between strontium-doped ferrite cathode and metallic interconnects in solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Miguel-Pérez, Verónica; Martínez-Amesti, Ana; Arriortua, María Isabel

2015-04-01

One of the most important issues related to the performance of solid oxide fuel cells (SOFCs) is the chromium poisoning of the perovskite-type materials used as cathodes by the gaseous chromium species from metallic interconnects. In this study, powder mixtures of LSF40-Cr2O3 were heated at 800 °C and 1000 °C in air and were subsequently analysed by X-ray powder diffraction. For all the mixtures, the crystallisation of SrCrO4 was observed. In addition, the degradation occurring between three alloys with different compositions, Crofer 22 APU, SS430 and Conicro 4023 W 188, as metallic interconnects and La0.6Sr0.4FeO3 (LSF40) ceramic material as a cathode was studied. The results show significant chromium deposition and the formation of SrCrO4, LaCrO3 and La2O3 that block the active LSF40 electrode surface and degrade the stack (YSZ/SDC/LSF40/Interconnect) performance. LSF40 assembled with SS430 exhibited substantial Cr deposition. The deposition of the Cr species and the reaction with the LSF40 cathode is related to the composition of the oxide scales formed at each metallic interconnect and at the same time is related to the composition of the alloys. The best results obtained were for the half-cell (YSZ/SDC/LSF40) in contact with Conicro 4023 W 188 and Crofer 22 APU after heat treatment in air at 800 °C for 100 h.

Development of large-area monolithically integrated silicon-film photovoltaic modules

NASA Astrophysics Data System (ADS)

Rand, J. A.; Cotter, J. E.; Ingram, A. E.; Ruffins, T. R.; Shreve, K. P.; Hall, R. B.; Barnett, A. M.

1993-06-01

This report describes work to develop Silicon-Film (trademark) Product 3 into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product 3 structure is a thin (less than 100 micron) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200 sq cm, 18%-efficient, monolithic array. The short-term objectives are to improve material quality and to fabricate 100 sq cm monolithically interconnected solar cell arrays. Low minority-carrier diffusion length in the silicon film and series resistance in the interconnected device structure are presently limiting device performance. Material quality is continually improving through reduced impurity contamination. Metallization schemes, such as a solder-dipped interconnection process, have been developed that will allow low-cost production processing and minimize R(sub s) effects. Test data for a nine-cell device (16 sq cm) indicated a V(sub oc) of 3.72 V. These first-reported monolithically interconnected multicrystalline silicon-on-ceramic devices show low shunt conductance (less than 0.1 mA/sq cm) due to limited conduction through the ceramic and no process-related metallization shunts.

Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics

NASA Astrophysics Data System (ADS)

Durel, Jocelyn; Ferrotti, Thomas; Chantre, Alain; Cremer, Sébastien; Harduin, Julie; Bernabé, Stéphane; Kopp, Christophe; Boeuf, Frédéric; Ben Bakir, Badhise; Broquin, Jean-Emmanuel

2016-02-01

In this paper, the simulation, design and fabrication of a back-side coupling (BSC) concept for silicon photonics, which targets heterogeneous hybrid III-V/Si laser integration is presented. Though various demonstrations of a complete SOI integration of passive and active photonic devices have been made, they all feature multi-level planar metal interconnects, and a lack of integrated light sources. This is mainly due to the conflict between the need of planar surfaces for III-V/Si bonding and multiple levels of metallization. The proposed BSC solution to this topographical problem consists in fabricating lasers on the back-side of the Si waveguides using a new process sequence. The devices are based on a hybrid structure composed of an InGaAsP MQW active area and a Si-based DBR cavity. The emitted light wavelength is accordable within a range of 20 nm around 1.31μm thanks to thermal heaters and the laser output is fiber coupled through a Grating Coupler (GC). From a manufacturing point of view, the BSC approach provides not only the advantages of allowing the use of a thin-BOX SOI instead of a thick one; but it also shifts the laser processing steps and their materials unfriendly to CMOS process to the far back-end areas of fabrication lines. Moreover, aside from solving technological integration issues, the BSC concept offers several new design opportunities for active and passive devices (heat sink, Bragg gratings, grating couplers enhanced with integrated metallic mirrors, tapers…). These building boxes are explored here theoretically and experimentally.

Mechanical reliability and life prediction of coated metallic interconnects within solid oxide fuel cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Zhijie; Xu, Wei; Stephens, Elizabeth

Metallic cell interconnects (IC) made of ferritic stainless steels, i.e., iron-based alloys, have been increasingly favored in the recent development of planar solid oxide fuel cells (SOFCs) because of their advantages in excellent imperviousness, low electrical resistance, ease in fabrication, and cost effectiveness. Typical SOFC operating conditions inevitably lead to the formation of oxide scales on the surface of ferritic stainless steel, which could cause delamination, buckling, and spallation resulting from the mismatch of the coefficient of thermal expansion and eventually reduce the lifetime of the interconnect components. Various protective coating techniques have been applied to alleviate these drawbacks. Inmore » the present work, a fracture-mechanics-based quantitative modeling framework has been established to predict the mechanical reliability and lifetime of the spinel-coated, surface-modified specimens under an isothermal cooling cycle. Analytical solutions have been formulated to evaluate the scale/substrate interfacial strength and determine the critical oxide thickness in terms of a variety of design factors, such as coating thickness, material properties, and uncertainties. In conclusion, the findings then are correlated with the experimentally measured oxide scale growth kinetics to quantify the predicted lifetime of the metallic interconnects.« less

Mechanical reliability and life prediction of coated metallic interconnects within solid oxide fuel cells

DOE PAGES

Xu, Zhijie; Xu, Wei; Stephens, Elizabeth; ...

2017-07-03

Metallic cell interconnects (IC) made of ferritic stainless steels, i.e., iron-based alloys, have been increasingly favored in the recent development of planar solid oxide fuel cells (SOFCs) because of their advantages in excellent imperviousness, low electrical resistance, ease in fabrication, and cost effectiveness. Typical SOFC operating conditions inevitably lead to the formation of oxide scales on the surface of ferritic stainless steel, which could cause delamination, buckling, and spallation resulting from the mismatch of the coefficient of thermal expansion and eventually reduce the lifetime of the interconnect components. Various protective coating techniques have been applied to alleviate these drawbacks. Inmore » the present work, a fracture-mechanics-based quantitative modeling framework has been established to predict the mechanical reliability and lifetime of the spinel-coated, surface-modified specimens under an isothermal cooling cycle. Analytical solutions have been formulated to evaluate the scale/substrate interfacial strength and determine the critical oxide thickness in terms of a variety of design factors, such as coating thickness, material properties, and uncertainties. In conclusion, the findings then are correlated with the experimentally measured oxide scale growth kinetics to quantify the predicted lifetime of the metallic interconnects.« less

Polymer-assisted metal deposition (PAMD): a full-solution strategy for flexible, stretchable, compressible, and wearable metal conductors.

PubMed

Yu, You; Yan, Casey; Zheng, Zijian

2014-08-20

Metal interconnects, contacts, and electrodes are indispensable elements for most applications of flexible, stretchable, and wearable electronics. Current fabrication methods for these metal conductors are mainly based on conventional microfabrication procedures that have been migrated from Si semiconductor industries, which face significant challenges for organic-based compliant substrates. This Research News highlights a recently developed full-solution processing strategy, polymer-assisted metal deposition (PAMD), which is particularly suitable for the roll-to-roll, low-cost fabrication of high-performance compliant metal conductors (Cu, Ni, Ag, and Au) on a wide variety of organic substrates including plastics, elastomers, papers, and textiles. This paper presents i) the principles of PAMD, and how to use it for making ii) flexible, stretchable, and wearable conductive metal electrodes, iii) patterned metal interconnects, and d) 3D stretchable and compressible metal sponges. A critical perspective on this emerging strategy is also provided. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cascaded Quadruple Active Bridge Structures for Multilevel DC to Three-Phase AC Conversion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Brian B; Achanta, Prasanta K; Maksimovic, Dragan

This paper introduces a multilevel architecture comprised of interconnected dc to three-phase ac converter units. To enable series connected operation, each converter unit contains a quadruple active bridge (QAB) converter that provides isolation between the dc side and each of the three ac sides. Since each converter unit transfers dc-side power as constant balanced three-phase power on the ac side, this implies instantaneous input-output power balance and allows elimination of bulk capacitive energy storage. In addition to minimizing required capacitance, the proposed approach simultaneously enables simplified dc-link controllers amenable to decentralized implementation, supports bidirectional power transfer, and exhibits a modularmore » structure to enhance scalability. Isolation provided by the QAB allows a wide range of electrical configurations among multiple units in various dc-ac, ac-dc or ac-ac applications. In this paper, the focus is on series connections on the ac side to emphasize multilevel operation, and the approach is experimentally validated in a dc-ac system containing two cascaded converter units.« less

Development and Application of HVOF Sprayed Spinel Protective Coating for SOFC Interconnects

NASA Astrophysics Data System (ADS)

Thomann, O.; Pihlatie, M.; Rautanen, M.; Himanen, O.; Lagerbom, J.; Mäkinen, M.; Varis, T.; Suhonen, T.; Kiviaho, J.

2013-06-01

Protective coatings are needed for metallic interconnects used in solid oxide fuel cell (SOFC) stacks to prevent excessive high-temperature oxidation and evaporation of chromium species. These phenomena affect the lifetime of the stacks by increasing the area-specific resistance (ASR) and poisoning of the cathode. Protective MnCo2O4 and MnCo1.8Fe0.2O4 coatings were applied on ferritic steel interconnect material (Crofer 22 APU) by high velocity oxy fuel spraying. The substrate-coating systems were tested in long-term exposure tests to investigate their high-temperature oxidation behavior. Additionally, the ASRs were measured at 700 °C for 1000 h. Finally, a real coated interconnect was used in a SOFC single-cell stack for 6000 h. Post-mortem analysis was carried out with scanning electron microscopy. The deposited coatings reduced significantly the oxidation of the metal, exhibited low and stable ASR and reduced effectively the migration of chromium.

Investigation of welded interconnection of large area wraparound contacted silicon solar cells

NASA Technical Reports Server (NTRS)

Lott, D. R.

1984-01-01

An investigation was conducted to evaluate the welding and temperature cycle testing of large area 5.9 x 5.9 wraparound silicon solar cells utilizing printed circuit substrates with SSC-155 interconnect copper metals and the LMSC Infrared Controlled weld station. An initial group of 5 welded modules containing Phase 2 developmental 5.9 x 5.9 cm cells were subjected to cyclical temperatures of + or 80 C at a rate of 120 cycles per day. Anomalies were noted in the adhesion of the cell contact metallization; therefore, 5 additional modules were fabricated and tested using available Phase I cells with demonstrated contact integrity. Cycling of the later module type through 12,000 cycles indicated the viability of this type of lightweight flexible array concept. This project demonstrated acceptable use of an alternate interconnect copper in combination with large area wraparound cells and emphasized the necessity to implement weld pull as opposed to solder pull procedures at the cell vendors for cells that will be interconnected by welding.

Maskless laser writing of microscopic metallic interconnects

DOEpatents

Maya, Leon

1995-01-01

A method of forming a metal pattern on a substrate. The method includes depositing an insulative nitride film on a substrate and irradiating a laser beam onto the nitride film, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent remaining in the nitride film as a conductive pattern.

Chromium Vaporization Reduction by Nickel Coatings For SOEC Interconnect Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michael V. Glazoff; Sergey N. Rashkeev; J. Stephen Herring

2014-09-01

The vaporization of Cr-rich volatile species from interconnect materials is a major source of degradation that limits the lifetime of planar solid oxide devices systems with metallic interconnects, including Solid Oxide Electrolysis Cells, or SOECs. Some metallic coatings (Ni, Co, and Cu) significantly reduce the Cr release from interconnects and slow down the oxide scale growth on the steel substrate. To shed additional light upon the mechanisms of such protection and find a suitable coating material for ferritic stainless steel materials, we used a combination of first-principles calculations, thermodynamics, and diffusion modeling to investigate which factors determine the quality ofmore » the Ni metallic coating at stainless steel interconnector. We found that the Cr migration in Ni coating is determined by a delicate combination of the nickel oxidation, Cr diffusion, and phase transformation processes. Although the formation of Cr2O3 oxide is more exothermic than that of NiO, the kinetic rate of the chromia formation in the coating layer and its surface is significantly reduced by the low mobility of Cr in nickel oxide and in NiCr2O4 spinel. These results are in a good agreement with diffusion modeling for Cr diffusion through Ni coating layer on the ferritic 441 steel substrate.« less

Integrated Flexible Electronic Devices Based on Passive Alignment for Physiological Measurement

PubMed Central

Ryu, Jin Hwa; Byun, Sangwon; Baek, In-Bok; Lee, Bong Kuk; Jang, Won Ick; Jang, Eun-Hye; Kim, Ah-Yung; Yu, Han Yung

2017-01-01

This study proposes a simple method of fabricating flexible electronic devices using a metal template for passive alignment between chip components and an interconnect layer, which enabled efficient alignment with high accuracy. An electrocardiogram (ECG) sensor was fabricated using 20 µm thick polyimide (PI) film as a flexible substrate to demonstrate the feasibility of the proposed method. The interconnect layer was fabricated by a two-step photolithography process and evaporation. After applying solder paste, the metal template was placed on top of the interconnect layer. The metal template had rectangular holes at the same position as the chip components on the interconnect layer. Rectangular hole sizes were designed to account for alignment tolerance of the chips. Passive alignment was performed by simply inserting the components in the holes of the template, which resulted in accurate alignment with positional tolerance of less than 10 µm based on the structural design, suggesting that our method can efficiently perform chip mounting with precision. Furthermore, a fabricated flexible ECG sensor was easily attachable to the curved skin surface and able to measure ECG signals from a human subject. These results suggest that the proposed method can be used to fabricate epidermal sensors, which are mounted on the skin to measure various physiological signals. PMID:28420219

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Technical Reports Server (NTRS)

Sewell, James S.; Bozada, Christopher A.

1994-01-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Astrophysics Data System (ADS)

Sewell, James S.; Bozada, Christopher A.

1994-02-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

Tubular solid oxide fuel cells with porous metal supports and ceramic interconnections

DOEpatents

Huang, Kevin [Export, PA; Ruka, Roswell J [Pittsburgh, PA

2012-05-08

An intermediate temperature solid oxide fuel cell structure capable of operating at from 600.degree. C. to 800.degree. C. having a very thin porous hollow elongated metallic support tube having a thickness from 0.10 mm to 1.0 mm, preferably 0.10 mm to 0.35 mm, a porosity of from 25 vol. % to 50 vol. % and a tensile strength from 700 GPa to 900 GPa, which metallic tube supports a reduced thickness air electrode having a thickness from 0.010 mm to 0.2 mm, a solid oxide electrolyte, a cermet fuel electrode, a ceramic interconnection and an electrically conductive cell to cell contact layer.

Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.; Hruby, Jill M.

2002-01-01

An apparatus and procedure for performing microfabrication of detailed metal structures by electroforming metal deposits within small cavities. Two primary areas of application are: the LIGA process which manufactures complex three-dimensional metal parts and the damascene process used for electroplating line and via interconnections of microelectronic devices. A porous electrode held in contact or in close proximity with a plating substrate or mold top to ensure one-dimensional and uniform current flow into all mold cavities is used. Electrolyte is pumped over the exposed surface of the porous electrode to ensure uniform ion concentrations at this external surface. The porous electrode prevents electrolyte circulation within individual mold cavities, avoiding preferential enhancement of ion transport in cavities having favorable geometries. Both current flow and ion transport are one-dimensional and identical in all mold cavities, so all metal deposits grow at the same rate eliminating nonuniformities of the prior art.

Maskless laser writing of microscopic metallic interconnects

DOEpatents

Maya, L.

1995-10-17

A method of forming a metal pattern on a substrate is disclosed. The method includes depositing an insulative nitride film on a substrate and irradiating a laser beam onto the nitride film, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent remaining in the nitride film as a conductive pattern. 4 figs.

Subsurface microscopy of interconnect layers of an integrated circuit.

PubMed

Köklü, F Hakan; Unlü, M Selim

2010-01-15

We apply the NA-increasing lens technique to confocal and wide-field backside microscopy of integrated circuits. We demonstrate 325 nm (lambda(0)/4) lateral spatial resolution while imaging metal structures located inside the interconnect layer of an integrated circuit. Vectorial field calculations are presented justifying our findings.

CuMn1.8O4 protective coatings on metallic interconnects for prevention of Cr-poisoning in solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Sun, Zhihao; Wang, Ruofan; Nikiforov, Alexey Y.; Gopalan, Srikanth; Pal, Uday B.; Basu, Soumendra N.

2018-02-01

Cr-poisoning of the cathodes due to the presence of metallic interconnects is detrimental to the performance of intermediate temperature solid oxide fuel cell stacks. Applying a protective coating on the interconnect is an effective solution to preventing Cr-poisoning. In this study, the application of a protective CuMn1.8O4 spinel coating is explored. Dense coatings are deposited on both metallic flat plates and meshes by electrophoretic deposition followed by thermal densification steps. The coating is found to be a mixture of Mn3O4 and cubic spinel phases at room temperature but is a pure cubic spinel phase between 750 °C and 850 °C. A reaction layer between the Cr2O3 scale at the coating/interconnect interface and CuMn1.8O4 coating is found to be a mixture of (Cu,Mn,Cr)3-xO4 cubic spinel phases with Cr-rich precipitates believed to be Cr2O3, indicating that the coating layer acts as a Cr getter. Solubility experiments show that 1 mol of the CuMn1.8O4 phase can getter at least 1.83 mol of Cr2O3 at 800 °C. Electrochemical testing of cells in the presence of coated interconnects show that the CuMn1.8O4 coating getters Cr effectively for 12 days at 800 °C, leading to no performance loss of the cell due to Cr-poisoning.

Cell and current collector felt arrangement for solid oxide electrochemical cell combinations

DOEpatents

Reichner, Philip

1988-01-01

A solid electrolyte electrochemical cell combination 1 is made, comprising an annular, axially elongated, inner electrode 2 containing at least one interior gas feed conduit 3; annular solid electrolyte segments 4 around and covering portions of the inner electrode; annular outer electrode segments 6 around and covering portions of the electrolyte segments; electronically conducting, non-porous, interconnection material 5 disposed between electrolyte segments and in contact with the inner electrode, and electronically conducting, porous, metal fiber current collector felts 7 disposed on top of the non-porous interconnect material and outer electrode segments, where both the non-porous interconnect material and the porous metal felts are disposed circumferentially about the cell, transversely to the axial length of the cell and the inner electrode is continuous for the entire axial length of the cell combination.

Synthesis of tin, silver and their alloy nanoparticles for lead-free interconnect applications

NASA Astrophysics Data System (ADS)

Jiang, Hongjin

SnPb solders have long been used as interconnect materials in microelectronic packaging. Due to the health threat of lead to human beings, the use of lead-free interconnect materials is imperative. Three kinds of lead-free interconnect materials are being investigated, namely lead-free metal solders (SnAg, SnAgCu, etc.), electrically conductive adhesives (ECAs) and carbon nanotubes (CNTs). However, there are still limitations for the full utilization of these lead-free interconnect materials in the microelectronic packaging, such as higher melting point of lead-free metal solders, lower electrical conductivity of the ECAs and poor adhesion of CNTs to substrates. This thesis is devoted to the research and development of low processing temperature lead-free interconnect materials for microelectronic packaging applications with an emphasis on fundamental studies of nanoparticles synthesis, dispersion and oxidation prevention, and nanocomposites fabrication. Oxide-free tin (Sn), tin/silver (96.5Sn3.5Ag) and tin/silver/copper (96.5Sn3.0Ag0.5Cu) alloy nanoparticles with different sizes were synthesized by a low temperature chemical reduction method. Both size dependent melting point and latent heat of fusion of the synthesized nanoparticles were obtained. The nano lead-free solder pastes/composites created by dispersing the SnAg or SnAgCu alloy nanoparticles into an acidic type flux spread and wet on the cleaned copper surface at 220 to 230°C. This study demonstrated the feasibility of nano sized SnAg or SnAgCu alloy particle pastes for low processing temperature lead-free interconnect applications in microelectronic packaging.

Multilevel photonic modules for millimeter-wave phased-array antennas

NASA Astrophysics Data System (ADS)

Paolella, Arthur C.; Joshi, Abhay M.; Wright, James G.; Coryell, Louis A.

1998-11-01

Optical signal distribution for phased array antennas in communication system is advantageous to designers. By distributing the microwave and millimeter wave signal through optical fiber there is the potential for improved performance and lower weight. In addition when applied to communication satellites this weight saving translates into substantially reduced launch costs. The goal of the Phase I Small Business Innovation Research (SBIR) Program is the development of multi-level photonic modules for phased array antennas. The proposed module with ultimately comprise of a monolithic, InGaAs/InP p-i-n photodetector-p-HEMT power amplifier, opto-electronic integrated circuit, that has 44 GHz bandwidth and output power of 50 mW integrated with a planar antenna. The photodetector will have a high quantum efficiency and will be front-illuminated, thereby improved optical performance. Under Phase I a module was developed using standard MIC technology with a high frequency coaxial feed interconnect.

Method of producing microporous joints in metal bodies

DOEpatents

Danko, Joseph C.

1982-01-01

Tungsten is placed in contact with either molybdenum, tantalum, niobium, vanadium, rhenium, or other metal of atoms having a different diffusion coefficient than tungsten. The metals are heated so that the atoms having the higher diffusion coefficient migrate to the metal having the lower diffusion rate, leaving voids in the higher diffusion coefficient metal. Heating is continued until the voids are interconnected.

The reactions of cobalt, iron and nickel in SO2 atmospheres Similarities and differences

NASA Technical Reports Server (NTRS)

Jacobson, N. S.; Worrell, W. L.

1985-01-01

The reactions of cobalt, iron and nickel in SO2 atmospheres are reviewed and compared. A mixed oxide-sulfide product layer is observed in all cases. Cobalt and nickel exhibit similar behavior. The observed rates are near the sulfidation rates, and the reaction rate is strongly influenced by the outward diffusion of metal through an interconnected sulfide network. A continuous interconnected sulfide is not observed in the oxide-sulfide scales formed on iron, and the reaction rates are more difficult to summarize. The differences and similarities among the three metals are explained in terms of the absence of scale-gas equilibrium and the ratio of the metal diffusivity in the corresponding oxide and sulfide.

The reactions of cobalt, iron and nickel in SO-2 atmospheres: Similarities and differences

NASA Technical Reports Server (NTRS)

Jacobson, N. S.; Worrell, W. L.

1984-01-01

The reactions of cobalt, iron and nickel in SO2 atmospheres are reviewed and compared. A mixed oxide-sulfide product layer is observed in all cases. Cobalt and nickel exhibits similar behavior. The observed rates are near the sulfidation rates, and the reaction rate is strongly influenced by the outward diffusion of metal through an interconnected sulfide network. A continuous interconnected sulfide is not observed in the oxide-sulfide scales formed on iron, and the reaction rates are more difficult to summarize. The differences and similarities among the three metals are explained in terms of the absence of scale-gas equilibrium and the ratio of the metal diffusivity in the corresponding oxide and sulfide.

Modeling and experimental characterization of electromigration in interconnect trees

NASA Astrophysics Data System (ADS)

Thompson, C. V.; Hau-Riege, S. P.; Andleigh, V. K.

1999-11-01

Most modeling and experimental characterization of interconnect reliability is focussed on simple straight lines terminating at pads or vias. However, laid-out integrated circuits often have interconnects with junctions and wide-to-narrow transitions. In carrying out circuit-level reliability assessments it is important to be able to assess the reliability of these more complex shapes, generally referred to as `trees.' An interconnect tree consists of continuously connected high-conductivity metal within one layer of metallization. Trees terminate at diffusion barriers at vias and contacts, and, in the general case, can have more than one terminating branch when they include junctions. We have extended the understanding of `immortality' demonstrated and analyzed for straight stud-to-stud lines, to trees of arbitrary complexity. This leads to a hierarchical approach for identifying immortal trees for specific circuit layouts and models for operation. To complete a circuit-level-reliability analysis, it is also necessary to estimate the lifetimes of the mortal trees. We have developed simulation tools that allow modeling of stress evolution and failure in arbitrarily complex trees. We are testing our models and simulations through comparisons with experiments on simple trees, such as lines broken into two segments with different currents in each segment. Models, simulations and early experimental results on the reliability of interconnect trees are shown to be consistent.

Multilevel integration of patternable low-κ material into advanced Cu BEOL

NASA Astrophysics Data System (ADS)

Lin, Qinghuang; Chen, S. T.; Nelson, A.; Brock, P.; Cohen, S.; Davis, B.; Fuller, N.; Kaplan, R.; Kwong, R.; Liniger, E.; Neumayer, D.; Patel, J.; Shobha, H.; Sooriyakumaran, R.; Purushothaman, S.; Spooner, T.; Miller, R.; Allen, R.; Wisnieff, R.

2010-04-01

In this paper, we wish to report, for the first time, on a simple, low-cost, novel way to form dual-damascene copper (Cu) on-chip interconnect or Back-End-Of-the-Line (BEOL) structures using a patternable low dielectric constant (low-κ) dielectric material concept. A patternable low-κ dielectric material combines the functions of a traditional resist and a dielectric material into one single material. It acts as a traditional resist during patterning and is subsequently converted to a low-κ dielectric material during a post-patterning curing process. No sacrificial materials (separate resists or hardmasks) and their related deposition, pattern transfer (etch) and removal (strip) are required to form dual-damascene BEOL patterns. We have successfully demonstrated multi-level dual-damascene integration of a novel patternable low-κ dielectric material into advanced Cu BEOL. This κ=2.7 patternable low-κ material is based on the industry standard SiCOH-based (silsesquioxane polymer) material platform and is compatible with 248 nm optical lithography. Multilevel integration of this patternable low-κ material at 45 nm node Cu BEOL fatwire levels has been demonstrated with very high electrical yields using the current manufacturing infrastructure.

Computation for Electromigration in Interconnects of Microelectronic Devices

NASA Astrophysics Data System (ADS)

Averbuch, Amir; Israeli, Moshe; Ravve, Igor; Yavneh, Irad

2001-03-01

Reliability and performance of microelectronic devices depend to a large extent on the resistance of interconnect lines. Voids and cracks may occur in the interconnects, causing a severe increase in the total resistance and even open circuits. In this work we analyze void motion and evolution due to surface diffusion effects and applied external voltage. The interconnects under consideration are three-dimensional (sandwich) constructs made of a very thin metal film of possibly variable thickness attached to a substrate of nonvanishing conductance. A two-dimensional level set approach was applied to study the dynamics of the moving (assumed one-dimensional) boundary of a void in the metal film. The level set formulation of an electromigration and diffusion model results in a fourth-order nonlinear (two-dimensional) time-dependent PDE. This equation was discretized by finite differences on a regular grid in space and a Runge-Kutta integration scheme in time, and solved simultaneously with a second-order static elliptic PDE describing the electric potential distribution throughout the interconnect line. The well-posed three-dimensional problem for the potential was approximated via singular perturbations, in the limit of small aspect ratio, by a two-dimensional elliptic equation with variable coefficients describing the combined local conductivity of metal and substrate (which is allowed to vary in time and space). The difference scheme for the elliptic PDE was solved by a multigrid technique at each time step. Motion of voids in both weak and strong electric fields was examined, and different initial void configurations were considered, including circles, ellipses, polygons with rounded corners, a butterfly, and long grooves. Analysis of the void behavior and its influence on the resistance gives the circuit designer a tool for choosing the proper parameters of an interconnect (width-to-length ratio, properties of the line material, conductivity of the underlayer, etc.).

The effect of doping (Mn,B)3O4 materials as protective layers in different metallic interconnects for Solid Oxide Fuel Cells

NASA Astrophysics Data System (ADS)

Miguel-Pérez, Verónica; Martínez-Amesti, Ana; Nó, María Luisa; Larrañaga, Aitor; Arriortua, María Isabel

2013-12-01

Spinel oxides with the general formula of (Mn,B)3O4 (B = Co, Fe) were used as barrier materials between the cathode and the metallic interconnect to reduce the rate of cathode degradation by Cr poisoning. The effect of doping at the B position was investigated terms of microstructure and electrical conductivity to determine its behaviour and effectiveness as a protective layer in contact with three metallic materials (Crofer 22 APU, SS430 and Conicro 4023 W 188). The analysis showed that the use of these materials considerably decreased the reactivity and diffusion of Cr between the cathode and the metallic interconnects. The protective layer doped with Fe at the B position exhibited the least amount of reactivity with the interconnector and cathode materials. The worst results were observed for SS430 cells coated with a protective layer perhaps due to their low Cr content. The Crofer 22 APU and Conicro 4023 W 188 samples exhibited very similar conductivity results in the presence of the MnCo1.9Fe0.1O4 protective coating. As a result, these two material combinations are a promising option for use as bipolar plates in SOFC.

Public release of optimization of metallization scheme for thin emitter wrap-through solar cells for higher efficiency, reduced precious metal costs, and reduced stress.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruby, Douglas Scott; Murphy, Brian; Meakin, David

2008-08-01

Back-contact crystalline-silicon photovoltaic solar cells and modules offer a number of advantages, including the elimination of grid shadowing losses, reduced cost through use of thinner silicon substrates, simpler module assembly, and improved aesthetics. While the existing edge tab method for interconnecting and stringing edge-connected back contact cells is acceptably straightforward and reliable, there are further gains to be exploited when you have both contact polarities on one side of the cell. In this work, we produce 'busbarless' emitter wrap-through solar cells that use 41% of the gridline silver (Ag) metallization mass compared to the edge tab design. Further, series resistancemore » power losses are reduced by extraction of current from more places on the cell rear, leading to a fill factor improvement of about 6% (relative) on the module level. Series resistance and current-generation losses associated with large rear bondpads and busbars are eliminated. Use of thin silicon (Si) wafers is enabled because of the reduced Ag metallization mass and by interconnection with conductive adhesives leading to reduced bow. The busbarless cell design interconnected with conductive adhesives passes typical International Electrotechnical Commission damp heat and thermal cycling test.« less

Metallic nanowire networks

DOEpatents

Song, Yujiang; Shelnutt, John A.

2012-11-06

A metallic nanowire network synthesized using chemical reduction of a metal ion source by a reducing agent in the presence of a soft template comprising a tubular inverse micellar network. The network of interconnected polycrystalline nanowires has a very high surface-area/volume ratio, which makes it highly suitable for use in catalytic applications.

Effect Of Impurity On Cu Electromigration

NASA Astrophysics Data System (ADS)

Hu, C.-K.; Angyal, M.; Baker, B. C.; Bonilla, G.; Cabral, C.; Canaperi, D. F.; Choi, S.; Clevenger, L.; Edelstein, D.; Gignac, L.; Huang, E.; Kelly, J.; Kim, B. Y.; Kyei-Fordjour, V.; Manikonda, S. L.; Maniscalco, J.; Mittal, S.; Nogami, T.; Parks, C.; Rosenberg, R.; Simon, A.; Xu, Y.; Vo, T. A.; Witt, C.

2010-11-01

The impact of the existence of Cu grain boundaries on the degradation of Cu interconnect lifetime at the 45 nm technology node and beyond has suggested that improved electromigra-tion in Cu grain boundaries has become increasingly important. In this paper, solute effects of non-metallic (C, Cl, O and S) and metallic (Al, Co, In, Mg, Sn, and Ti) impurities on Cu elec-tromigration were investigated. The Cu alloy interconnects were fabricated by adjusting Cu electroplating solutions or by depositing a Cu alloy seed, a thin film layer of impurity, an alloy liner, or a metal cap. A large variation of Cu grain structure in the samples was achieved by adjusting the wafer fabrication process steps. The non-metallic impurities were found to be less than 0.1% in the electroplated Cu with no effect on Cu electromigration lifetimes. Most of the metallic impurities reduced Cu interface and grain boundary mass flows and enhanced Cu lifetime, but Al, Co, and Mg impurities did not mitigate Cu grain boundary diffusion.

An Agent-Based Model for Studying Child Maltreatment and Child Maltreatment Prevention

NASA Astrophysics Data System (ADS)

Hu, Xiaolin; Puddy, Richard W.

This paper presents an agent-based model that simulates the dynamics of child maltreatment and child maltreatment prevention. The developed model follows the principles of complex systems science and explicitly models a community and its families with multi-level factors and interconnections across the social ecology. This makes it possible to experiment how different factors and prevention strategies can affect the rate of child maltreatment. We present the background of this work and give an overview of the agent-based model and show some simulation results.

Chip-scale integrated optical interconnects: a key enabler for future high-performance computing

NASA Astrophysics Data System (ADS)

Haney, Michael; Nair, Rohit; Gu, Tian

2012-01-01

High Performance Computing (HPC) systems are putting ever-increasing demands on the throughput efficiency of their interconnection fabrics. In this paper, the limits of conventional metal trace-based inter-chip interconnect fabrics are examined in the context of state-of-the-art HPC systems, which currently operate near the 1 GFLOPS/W level. The analysis suggests that conventional metal trace interconnects will limit performance to approximately 6 GFLOPS/W in larger HPC systems that require many computer chips to be interconnected in parallel processing architectures. As the HPC communications bottlenecks push closer to the processing chips, integrated Optical Interconnect (OI) technology may provide the ultra-high bandwidths needed at the inter- and intra-chip levels. With inter-chip photonic link energies projected to be less than 1 pJ/bit, integrated OI is projected to enable HPC architecture scaling to the 50 GFLOPS/W level and beyond - providing a path to Peta-FLOPS-level HPC within a single rack, and potentially even Exa-FLOPSlevel HPC for large systems. A new hybrid integrated chip-scale OI approach is described and evaluated. The concept integrates a high-density polymer waveguide fabric directly on top of a multiple quantum well (MQW) modulator array that is area-bonded to the Silicon computing chip. Grayscale lithography is used to fabricate 5 μm x 5 μm polymer waveguides and associated novel small-footprint total internal reflection-based vertical input/output couplers directly onto a layer containing an array of GaAs MQW devices configured to be either absorption modulators or photodetectors. An external continuous wave optical "power supply" is coupled into the waveguide links. Contrast ratios were measured using a test rider chip in place of a Silicon processing chip. The results suggest that sub-pJ/b chip-scale communication is achievable with this concept. When integrated into high-density integrated optical interconnect fabrics, it could provide a seamless interconnect fabric spanning the intra-

Line length dependencies in interconnect optimization

NASA Astrophysics Data System (ADS)

Kadoch, Daniel; Duane, Michael; Lee, Yohan

1997-09-01

Metal line delay has become increasingly important for ULSI devices. Numerous expressions and software tools have been developed to describe interconnect delay as a function of the geometry and layout. Although many of these formulas have line length effects, this has not been explored in depth. Most software tools are either geared towards circuit designers, or involve more complex and CPU-intensive 3D modeling. In this work, PISCES (a 2D device simulator) was used to extract metal capacitance per unit length. We extend this approach for various lengths by creating a ladder network of the RC components and simulating in SPICE, or using simple closed-form Elmore delay equations. A new key result is that there are optimum metal line width/space for a fixed pitch and height/space ratios that are metal length dependent. For metal lines shorter than about 1500 micrometers , it is better to have narrower metal lines, and for lengths less than 500 micrometers , shrinking metal height is desirable because the penalty in resistance is more than compensated by the decrease in capacitance. For longer lines, the time delay is dominated by resistance, and wider, taller lines are better. Increasing metal spacing or reducing dielectric constant were beneficial for both long and short metal lines.

Cantilever testing of sintered-silver interconnects

DOE PAGES

Wereszczak, Andrew A.; Chen, Branndon R.; Jadaan, Osama M.; ...

2017-10-19

Cantilever testing is an underutilized test method from which results and interpretations promote greater understanding of the tensile and shear failure responses of interconnects, metallizations, or bonded joints. The use and analysis of this method were pursued through the mechanical testing of sintered-silver interconnects that joined Ni/Au-plated copper pillars or Ti/Ni/Ag-plated silicon pillars to Ag-plated direct bonded copper substrates. Sintered-silver was chosen as the interconnect test medium because of its high electrical and thermal conductivities and high-temperature capability—attractive characteristics for a candidate interconnect in power electronic components and other devices. Deep beam theory was used to improve upon the estimationsmore » of the tensile and shear stresses calculated from classical beam theory. The failure stresses of the sintered-silver interconnects were observed to be dependent on test-condition and test-material-system. In conclusion, the experimental simplicity of cantilever testing, and the ability to analytically calculate tensile and shear stresses at failure, result in it being an attractive mechanical test method to evaluate the failure response of interconnects.« less

Cantilever testing of sintered-silver interconnects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wereszczak, Andrew A.; Chen, Branndon R.; Jadaan, Osama M.

Cantilever testing is an underutilized test method from which results and interpretations promote greater understanding of the tensile and shear failure responses of interconnects, metallizations, or bonded joints. The use and analysis of this method were pursued through the mechanical testing of sintered-silver interconnects that joined Ni/Au-plated copper pillars or Ti/Ni/Ag-plated silicon pillars to Ag-plated direct bonded copper substrates. Sintered-silver was chosen as the interconnect test medium because of its high electrical and thermal conductivities and high-temperature capability—attractive characteristics for a candidate interconnect in power electronic components and other devices. Deep beam theory was used to improve upon the estimationsmore » of the tensile and shear stresses calculated from classical beam theory. The failure stresses of the sintered-silver interconnects were observed to be dependent on test-condition and test-material-system. In conclusion, the experimental simplicity of cantilever testing, and the ability to analytically calculate tensile and shear stresses at failure, result in it being an attractive mechanical test method to evaluate the failure response of interconnects.« less

A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

NASA Technical Reports Server (NTRS)

Savich, Gregory R.; Simons, Rainee N.

2006-01-01

Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2003-01-01

A series of ceramic substrates and thick-film metalization-based prototype microsystem packages designed for silicon carbide (SiC) high-temperature microsystems have been developed for operation in 500 C harsh environments. These prototype packages were designed, fabricated, and assembled at the NASA Glenn Research Center. Both the electrical interconnection system and the die-attach scheme for this packaging system have been tested extensively at high temperatures. Printed circuit boards used to interconnect these chip-level packages and passive components also are being fabricated and tested. NASA space and aeronautical missions need harsh-environment, especially high-temperature, operable microsystems for probing the inner solar planets and for in situ monitoring and control of next-generation aeronautical engines. Various SiC high-temperature-operable microelectromechanical system (MEMS) sensors, actuators, and electronics have been demonstrated at temperatures as high as 600 C, but most of these devices were demonstrated only in the laboratory environment partially because systematic packaging technology for supporting these devices at temperatures of 500 C and beyond was not available. Thus, the development of a systematic high-temperature packaging technology is essential for both in situ testing and the commercialization of high-temperature SiC MEMS. Researchers at Glenn developed new prototype packages for high-temperature microsystems using ceramic substrates (aluminum nitride and 96- and 90-wt% aluminum oxides) and gold (Au) thick-film metalization. Packaging components, which include a thick-film metalization-based wirebond interconnection system and a low-electrical-resistance SiC die-attachment scheme, have been tested at temperatures up to 500 C. The interconnection system composed of Au thick-film printed wire and 1-mil Au wire bond was tested in 500 C oxidizing air with and without 50-mA direct current for over 5000 hr. The Au thick-film metalization-based wirebond electrical interconnection system was also tested in an extremely dynamic thermal environment to assess thermal reliability. The I-V curve1 of a SiC high-temperature diode was measured in oxidizing air at 500 C for 1000 hr to electrically test the Au thick-film material-based die-attach assembly.

Electrocatalytic N-Doped Graphitic Nanofiber - Metal/Metal Oxide Nanoparticle Composites.

PubMed

Tang, Hongjie; Chen, Wei; Wang, Jiangyan; Dugger, Thomas; Cruz, Luz; Kisailus, David

2018-03-01

Carbon-based nanocomposites have shown promising results in replacing commercial Pt/C as high-performance, low cost, nonprecious metal-based oxygen reduction reaction (ORR) catalysts. Developing unique nanostructures of active components (e.g., metal oxides) and carbon materials is essential for their application in next generation electrode materials for fuel cells and metal-air batteries. Herein, a general approach for the production of 1D porous nitrogen-doped graphitic carbon fibers embedded with active ORR components, (M/MO x , i.e., metal or metal oxide nanoparticles) using a facile two-step electrospinning and annealing process is reported. Metal nanoparticles/nanoclusters nucleate within the polymer nanofibers and subsequently catalyze graphitization of the surrounding polymer matrix and following oxidation, create an interconnected graphite-metal oxide framework with large pore channels, considerable active sites, and high specific surface area. The metal/metal oxide@N-doped graphitic carbon fibers, especially Co 3 O 4 , exhibit comparable ORR catalytic activity but superior stability and methanol tolerance versus Pt in alkaline solutions, which can be ascribed to the synergistic chemical coupling effects between Co 3 O 4 and robust 1D porous structures composed of interconnected N-doped graphitic nanocarbon rings. This finding provides a novel insight into the design of functional electrocatalysts using electrospun carbon nanomaterials for their application in energy storage and conversion fields. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

VCSELs for exascale computing, computer farms, and green photonics

NASA Astrophysics Data System (ADS)

Hofmann, Werner; Moser, Philip; Wolf, Philip; Larisch, Gunter; Li, Hui; Li, Wei; Lott, James; Bimberg, Dieter

2012-11-01

The bandwidth-induced communication bottleneck due to the intrinsic limitations of metal interconnects is inhibiting the performance and environmental friendliness of todaýs supercomputers, data centers, and in fact all other modern electrically interconnected and interoperable networks such as data farms and "cloud" fabrics. The same is true for systems of optical interconnects (OIs), where even when the metal interconnects are replaced with OIs the systems remain limited by bandwidth, physical size, and most critically the power consumption and lifecycle operating costs. Vertical-cavity surface-emitting lasers (VCSELs) are ideally suited to solve this dilemma. Global communication providers like Google Inc., Intel Inc., HP Inc., and IBM Inc. are now producing optical interconnects based on VCSELs. The optimal bandwidth per link may be analyzed by by using Amdahĺs Law and depends on the architecture of the data center and the performance of the servers within the data center. According to Google Inc., a bandwidth of 40 Gb/s has to be accommodated in the future. IBM Inc. demands 80 Tbps interconnects between solitary server chips in 2020. We recently realized ultrahigh bit rate VCSELs up to 49 Gb/s suited for such optical interconnects emitting at 980 nm. These devices show error-free transmission at temperatures up to 155°C and operate beyond 200°C. Single channel data-rates of 40 Gb/s were achieved up to 75°C. Record high energy efficiencies close to 50 fJ/bit were demonstrated for VCSELs emitting at 850 nm. Our devices are fabricated using a full three-inch wafer process, and the apertures were formed by in-situ controlled selective wet oxidation using stainless steel-based vacuum equipment of our own design. assembly, and operation. All device data are measured, recorded, and evaluated by our proprietary fully automated wafer mapping probe station. The bandwidth density of our present devices is expected to be scalable from about 100 Gbps/mm² to a physical limit of roughly 15 Tbps/mm² based on the current 12.5 Gb/s VCSEL technology. Still more energy-efficient and smaller volume laser diode devices dissipating less heat are mandatory for further up scaling of the bandwidth. Novel metal-clad VCSELs enable a reduction of the device's footprint for potentially ultrashort range interconnects by 1 to 2 orders of magnitude compared to conventional VCSELs thus enabling a similar increase of device density and bandwidth.

The Use of Metal Filled Via Holes for Improving Isolation in LTCC RF and Wireless Multichip Packages

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Chun, Donghoon; Yook, Jong-Gwan; Katehi, Linda P. B.

1999-01-01

LTCC MCMs (Low Temperature Cofired Ceramic MultiChip Module) for RF and wireless systems often use metal filled via holes to improve isolation between the stripline and microstrip interconnects. In this paper, results from a 3D-FEM electromagnetic characterization of microstrip and stripline interconnects with metal filled via fences for isolation are presented. It is shown that placement of a via hole fence closer than three times the substrate height to the transmission lines increases radiation and coupling. Radiation loss and reflections are increased when a short via fence is used in areas suspected of having high radiation. Also, via posts should not be separated by more than three times the substrate height for low radiation loss, coupling, and suppression of higher order modes in a package.

Multilevel Green's function interpolation method for scattering from composite metallic and dielectric objects.

PubMed

Shi, Yan; Wang, Hao Gang; Li, Long; Chan, Chi Hou

2008-10-01

A multilevel Green's function interpolation method based on two kinds of multilevel partitioning schemes--the quasi-2D and the hybrid partitioning scheme--is proposed for analyzing electromagnetic scattering from objects comprising both conducting and dielectric parts. The problem is formulated using the surface integral equation for homogeneous dielectric and conducting bodies. A quasi-2D multilevel partitioning scheme is devised to improve the efficiency of the Green's function interpolation. In contrast to previous multilevel partitioning schemes, noncubic groups are introduced to discretize the whole EM structure in this quasi-2D multilevel partitioning scheme. Based on the detailed analysis of the dimension of the group in this partitioning scheme, a hybrid quasi-2D/3D multilevel partitioning scheme is proposed to effectively handle objects with fine local structures. Selection criteria for some key parameters relating to the interpolation technique are given. The proposed algorithm is ideal for the solution of problems involving objects such as missiles, microstrip antenna arrays, photonic bandgap structures, etc. Numerical examples are presented to show that CPU time is between O(N) and O(N log N) while the computer memory requirement is O(N).

A novel fabrication method for surface integration of metal structures into polymers (SIMSIP)

NASA Astrophysics Data System (ADS)

Carrion-Gonzalez, Hector

Recently developed flexible electronics applications require that the thin metal films embedded on elastomer substrates also be flexible. These electronic systems are radically different in terms of performance and functionality than conventional silicon-based devices. A key question is whether the metal deposited on flexible films can survive large strains without rupture. Cumbersome macro-fabrication methods have been developed for functional and bendable electronics (e.g., interconnects) encapsulated between layers of polymer films. However, future electronic applications may require electronic flexible devices to be in intimate contact with curved surfaces (e.g., retinal implants) and to be robust enough to withstand large and repeated mechanical deformations. In this research, a novel technique for surface integration of metal structures into polymers (SIMSIP) was developed. Surface embedding, as opposed to placing metal on polymers, provides better adherence while leaving the surface accessible for contacts. This was accomplished by first fabricating the micro-scale metal patterns on a quartz or Teflon mother substrate, and then embedding them to a flexible polyimide thin film. The technique was successfully used to embed micro-metal structures of gold (Au), silver (Ag), and copper (Cu) into polyimide films without affecting the functional properties of the either the metals or the polymers. Experimental results confirm the successful surface-embedding of metal structures as narrow as 0.6 microm wide for different geometries commonly used in circuit design. Although similar approaches exist in literature, the proposed methodology provides a simpler and more reliable way of producing flexible circuits/electronics that is also suitable for high volume manufacturing. In order to demonstrate the flexibility of metal interconnects fabricated using the SIMSIP technique, multiple Au electrodes (5 microm and 2.5 microm wide) were tested using the X-theta bending methodology. The X-theta bending test captures data on the electrical resistivity of micro Au electrodes fabricated using the proposed SIMSIP technique by bending them at different angles between 0o and 180o up to 50 times. The data shows that the electrical resistivity of the Au electrodes remains constant (<1% variation) despite the interconnects being repeatedly subjected to extreme tensile and compressive forces during the X-theta bending test. These results are significant from the perspective of flexible electronics and biotechnology applications since the fabricated thin films exhibit significant electrical stability, reliability and wear resistance. These surface-embedded, flexible, and mechanically stable metal interconnects will enable the further development of new electronic products with applications in biotechnology (e.g., e-skin), space exploration (e.g., satellites), and microelectronics (e.g., flat panel displays). The SIMSIP technique is also a suitable process for the nanofabrication of flexible electronic devices in applications that require intimate contact with bendable curved surfaces (e.g., retinal implants).

Electronic Devices with Diffusion Barrier and Process for Making Same

DTIC Science & Technology

2001-05-09

conductivity metallization materials such as gold , silver, and platinum. As can be appreciated from the foregoing, a barrier film is needed which... gold ), as well as platinum. These metals are highly attractive 10 for interconnect strategies on account of there intrinsic low resistivity and...the monolayer portion of the barrier -7- material. The monolayer ( monoatomic ) layer of metal atoms and the homoepitaxial film of metal halide

"Generality of mis-fit"? The real-life difficulty of matching scales in an interconnected world.

PubMed

Keskitalo, E Carina H; Horstkotte, Tim; Kivinen, Sonja; Forbes, Bruce; Käyhkö, Jukka

2016-10-01

A clear understanding of processes at multiple scales and levels is of special significance when conceiving strategies for human-environment interactions. However, understanding and application of the scale concept often differ between administrative-political and ecological disciplines. These mirror major differences in potential solutions whether and how scales can, at all, be made congruent. As a result, opportunities of seeking "goodness-of-fit" between different concepts of governance should perhaps be reconsidered in the light of a potential "generality of mis-fit." This article reviews the interdisciplinary considerations inherent in the concept of scale in its ecological, as well as administrative-political, significance and argues that issues of how to manage "mis-fit" should be awarded more emphasis in social-ecological research and management practices. These considerations are exemplified by the case of reindeer husbandry in Fennoscandia. Whilst an indigenous small-scale practice, reindeer husbandry involves multi-level ecological and administrative-political complexities-complexities that we argue may arise in any multi-level system.

Nanoporous titanium niobium oxide and titanium tantalum oxide compositions and their use in anodes of lithium ion batteries

DOEpatents

Dai, Sheng; Guo, Bingkun; Sun, Xiao-Guang; Qiao, Zhenan

2017-10-31

Nanoporous metal oxide framework compositions useful as anodic materials in a lithium ion battery, the composition comprising metal oxide nanocrystals interconnected in a nanoporous framework and having interconnected channels, wherein the metal in said metal oxide comprises titanium and at least one metal selected from niobium and tantalum, e.g., TiNb.sub.2-x Ta.sub.xO.sub.y (wherein x is a value from 0 to 2, and y is a value from 7 to 10) and Ti.sub.2Nb.sub.10-vTa.sub.vO.sub.w (wherein v is a value from 0 to 2, and w is a value from 27 to 29). A novel sol gel method is also described in which sol gel reactive precursors are combined with a templating agent under sol gel reaction conditions to produce a hybrid precursor, and the precursor calcined to form the anodic composition. The invention is also directed to lithium ion batteries in which the nanoporous framework material is incorporated in an anode of the battery.

Metallic interconnects for SOFC: Characterisation of corrosion resistance and conductivity evaluation at operating temperature of differently coated alloys

NASA Astrophysics Data System (ADS)

Fontana, S.; Amendola, R.; Chevalier, S.; Piccardo, P.; Caboche, G.; Viviani, M.; Molins, R.; Sennour, M.

One of challenges in improving the performance and cost-effectiveness of solid oxide fuel cells (SOFCs) is the development of suitable interconnect materials. Recent researches have enabled to decrease the operating temperature of the SOFC from 1000 to 800 °C. Chromia forming alloys are then among the best candidates for interconnects. However, low electronic conductivity and volatility of chromium oxide scale need to be solved to improve interconnect performances. In the field of high temperature oxidation of metals, it is well known that the addition of reactive element into alloys or as thin film coatings, improves their oxidation resistance at high temperature. The elements of beginning of the lanthanide group and yttrium are the most efficient. The goal of this study is to make reactive element oxides (La 2O 3, Nd 2O 3 and Y 2O 3) coatings by metal organic chemical vapour deposition (MOCVD) on Crofer 22 APU, AL 453 and Haynes 230 in order to form perovskite oxides which present a good conductivity at high temperature. The coatings were analysed after 100 h ageing at 800 °C in air under atmospheric pressure by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analyses, X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses. Area-specific resistance (ASR) was measured in air for the same times and temperature, using a sandwich technique with Pt paste for electrical contacts between surfaces. The ASR values for the best coating were estimated to be limited to 0.035 Ω cm 2, even after 40,000 h use.

Combination nickel foam expanded nickel screen electrical connection supports for solid oxide fuel cells

DOEpatents

Draper, Robert; Prevish, Thomas; Bronson, Angela; George, Raymond A.

2007-01-02

A solid oxide fuel assembly is made, wherein rows (14, 25) of fuel cells (17, 19, 21, 27, 29, 31), each having an outer interconnection (20) and an outer electrode (32), are disposed next to each other with corrugated, electrically conducting expanded metal mesh member (22) between each row of cells, the corrugated mesh (22) having top crown portions and bottom portions, where the top crown portion (40) have a top bonded open cell nickel foam (51) which contacts outer interconnections (20) of the fuel cells, said mesh and nickel foam electrically connecting each row of fuel cells, and where there are no more metal felt connections between any fuel cells.

Immortality of Cu damascene interconnects

NASA Astrophysics Data System (ADS)

Hau-Riege, Stefan P.

2002-04-01

We have studied short-line effects in fully-integrated Cu damascene interconnects through electromigration experiments on lines of various lengths and embedded in different dielectric materials. We compare these results with results from analogous experiments on subtractively-etched Al-based interconnects. It is known that Al-based interconnects exhibit three different behaviors, depending on the magnitude of the product of current density, j, and line length, L: For small values of (jL), no void nucleation occurs, and the line is immortal. For intermediate values, voids nucleate, but the line does not fail because the current can flow through the higher-resistivity refractory-metal-based shunt layers. Here, the resistance of the line increases but eventually saturates, and the relative resistance increase is proportional to (jL/B), where B is the effective elastic modulus of the metallization system. For large values of (jL/B), voiding leads to an unacceptably high resistance increase, and the line is considered failed. By contrast, we observed only two regimes for Cu-based interconnects: Either the resistance of the line stays constant during the duration of the experiment, and the line is considered immortal, or the line fails due to an abrupt open-circuit failure. The absence of an intermediate regime in which the resistance saturates is due to the absence of a shunt layer that is able to support a large amount of current once voiding occurs. Since voids nucleate much more easily in Cu- than in Al-based interconnects, a small fraction of short Cu lines fails even at low current densities. It is therefore more appropriate to consider the probability of immortality in the case of Cu rather than assuming a sharp boundary between mortality and immortality. The probability of immortality decreases with increasing amount of material depleted from the cathode, which is proportional to (jL2/B) at steady state. By contrast, the immortality of Al-based interconnects is described by (jL) if no voids nucleate, and (jL/B) if voids nucleate.

Ion traps fabricated in a CMOS foundry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mehta, K. K.; Ram, R. J.; Eltony, A. M.

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size.more » This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.« less

Method of doping interconnections for electrochemical cells

DOEpatents

Pal, Uday B.; Singhal, Subhash C.; Moon, David M.; Folser, George R.

1990-01-01

A dense, electronically conductive interconnection layer 26 is bonded on a porous, tubular, electronically conductive air electrode structure 16, optionally supported by a ceramic support 22, by (A) forming a layer of oxide particles of at least one of the metals Ca, Sr, Co, Ba or Mg on a part 24 of a first surface of the air electrode 16, (B) heating the electrode structure, (C) applying a halide vapor containing at least lanthanum halide and chromium halide to the first surface and applying a source of oxygen to a second opposite surface of the air electrode so that they contact at said first surface, to cause a reaction of the oxygen and halide and cause a dense lanthanum-chromium oxide structure to grow, from the first electrode surface, between and around the oxide particles, where the metal oxide particles get incoporated into the lanthanum-chromium oxide structure as it grows thicker with time, and the metal ions in the oxide particles diffuse into the bulk of the lanthamum-chromium oxide structure, to provide a dense, top, interconnection layer 26 on top of the air electrode 16. A solid electrolyte layer 18 can be applied to the uncovered portion of the air electrode, and a fuel electrode 20 can be applied to the solid electrolyte, to provide an electrochemical cell 10.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L.; Deceglie, Michael G.; Rienäcker, Michael

Three-terminal tandem solar cells can provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects.

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Liangyu, Chen; Evans, Laura J.; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.

2015-01-01

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 1000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated With Two Levels of Metal Interconnect

NASA Technical Reports Server (NTRS)

Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Evans, Laura J.; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.

2015-01-01

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 3000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

Elongated solid electrolyte cell configurations and flexible connections therefor

DOEpatents

Reichner, P.

1989-10-17

A flexible, high temperature, solid oxide electrolyte electrochemical cell stack configuration is made, comprising a plurality of flattened, elongated, connected cell combinations, each cell combination containing an interior electrode having a top surface and a plurality of interior gas feed conduits, through its axial length, electrolyte contacting the interior electrode and exterior electrode contacting electrolyte, where a major portion of the air electrode top surface is covered by interconnection material, and where each cell has at least one axially elongated, electronically conductive, flexible, porous, metal fiber felt material in electronic connection with the air electrode through contact with a major portion of the interconnection material, the metal fiber felt being effective as a shock absorbent body between the cells. 4 figs.

A Modular Multilevel Converter with Power Mismatch Control for Grid-Connected Photovoltaic Systems

DOE PAGES

Duman, Turgay; Marti, Shilpa; Moonem, M. A.; ...

2017-05-17

A modular multilevel power converter configuration for grid connected photovoltaic (PV) systems is proposed. The converter configuration replaces the conventional bulky line frequency transformer with several high frequency transformers, potentially reducing the balance of systems cost of PV systems. The front-end converter for each port is a neutral-point diode clamped (NPC) multi-level dc-dc dual-active bridge (ML-DAB) which allows maximum power point tracking (MPPT). The integrated high frequency transformer provides the galvanic isolation between the PV and grid side and also steps up the low dc voltage from PV source. Following the ML-DAB stage, in each port, is a NPC inverter.more » N number of NPC inverters’ outputs are cascaded to attain the per-phase line-to-neutral voltage to connect directly to the distribution grid (i.e., 13.8 kV). The cascaded NPC (CNPC) inverters have the inherent advantage of using lower rated devices, smaller filters and low total harmonic distortion required for PV grid interconnection. The proposed converter system is modular, scalable, and serviceable with zero downtime with lower foot print and lower overall cost. A novel voltage balance control at each module based on power mismatch among N-ports, have been presented and verified in simulation. Analysis and simulation results are presented for the N-port converter. The converter performance has also been verified on a hardware prototype.« less

A Modular Multilevel Converter with Power Mismatch Control for Grid-Connected Photovoltaic Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duman, Turgay; Marti, Shilpa; Moonem, M. A.

A modular multilevel power converter configuration for grid connected photovoltaic (PV) systems is proposed. The converter configuration replaces the conventional bulky line frequency transformer with several high frequency transformers, potentially reducing the balance of systems cost of PV systems. The front-end converter for each port is a neutral-point diode clamped (NPC) multi-level dc-dc dual-active bridge (ML-DAB) which allows maximum power point tracking (MPPT). The integrated high frequency transformer provides the galvanic isolation between the PV and grid side and also steps up the low dc voltage from PV source. Following the ML-DAB stage, in each port, is a NPC inverter.more » N number of NPC inverters’ outputs are cascaded to attain the per-phase line-to-neutral voltage to connect directly to the distribution grid (i.e., 13.8 kV). The cascaded NPC (CNPC) inverters have the inherent advantage of using lower rated devices, smaller filters and low total harmonic distortion required for PV grid interconnection. The proposed converter system is modular, scalable, and serviceable with zero downtime with lower foot print and lower overall cost. A novel voltage balance control at each module based on power mismatch among N-ports, have been presented and verified in simulation. Analysis and simulation results are presented for the N-port converter. The converter performance has also been verified on a hardware prototype.« less

A metallic interconnect for a solid oxide fuel cell stack

NASA Astrophysics Data System (ADS)

England, Diane Mildred

A solid oxide fuel cell (SOFC) electrochemically converts the chemical energy of reaction into electrical energy. The commercial success of planar, SOFC stack technology has a number of challenges, one of which is the interconnect that electrically and physically connects the cathode of one cell to the anode of an adjacent cell in the SOFC stack and in addition, separates the anodic and cathodic gases. An SOFC stack operating at intermediate temperatures, between 600°C and 800°C, can utilize a metallic alloy as an interconnect material. Since the interconnect of an SOFC stack must operate in both air and fuel environments, the oxidation kinetics, adherence and electronic resistance of the oxide scales formed on commercial alloys were investigated in air and wet hydrogen under thermal cycling conditions to 800°C. The alloy, Haynes 230, exhibited the slowest oxidation kinetics and the lowest area-specific resistance as a function of oxidation time of all the alloys in air at 800°C. However, the area-specific resistance of the oxide scale formed on Haynes 230 in wet hydrogen was unacceptably high after only 500 hours of oxidation, which was attributed to the high resistivity of Cr2O3 in a reducing atmosphere. A study of the electrical conductivity of the minor phase manganese chromite, MnXCr3-XO4, in the oxide scale of Haynes 230, revealed that a composition closer to Mn2CrO4 had significantly higher electrical conductivity than that closer to MnCr 2O4. Haynes 230 was coated with Mn to form a phase closer to the Mn2CrO4 composition for application on the fuel side of the interconnect. U.S. Patent No. 6,054,231 is pending. Although coating a metallic alloy is inexpensive, the stringent economic requirements of SOFC stack technology required an alloy without coating for production applications. As no commercially available alloy, among the 41 alloys investigated, performed to the specifications required, a new alloy was created and designated DME-A2. The oxide scale formed on DME-A2 at 800°C exhibited extremely high electrical conductivity with respect to the commercially available alloys studied. This new alloy shows great promise for use as an interconnect material for a planar SOFC stack operating at intermediate temperatures.

Multiscale free-space optical interconnects for intrachip global communication: motivation, analysis, and experimental validation.

PubMed

McFadden, Michael J; Iqbal, Muzammil; Dillon, Thomas; Nair, Rohit; Gu, Tian; Prather, Dennis W; Haney, Michael W

2006-09-01

The use of optical interconnects for communication between points on a microchip is motivated by system-level interconnect modeling showing the saturation of metal wire capacity at the global layer. Free-space optical solutions are analyzed for intrachip communication at the global layer. A multiscale solution comprising microlenses, etched compound slope microprisms, and a curved mirror is shown to outperform a single-scale alternative. Microprisms are designed and fabricated and inserted into an optical setup apparatus to experimentally validate the concept. The multiscale free-space system is shown to have the potential to provide the bandwidth density and configuration flexibility required for global communication in future generations of microchips.

New barrierless copper-alloy film for future applications

NASA Astrophysics Data System (ADS)

Lin, Chon-Hsin Lin

2015-09-01

Since Cu metallization results in a conductivity and an electromigration resistance greater than those of Al, it has become popular for making Si-based interconnects for numerous devices in the field of microelectronics. Following the current trend of miniaturization required for most electronic components, there is a greater need for further size reduction in Si-based devices. The most critical side effect of size reduction is the increase in electronic scattering and resistivity when the barrier-layer thickness is further reduced. To explore advanced Cu-metallization methods and to develop a more economical manufacturing process for Cu-alloy films, the development of Cu materials having better quality and higher thermal stability becomes imperative for the metallization and annealing processes. For this purpose, we first fabricated Cu(GeNx) films and examined their thermal stability and electrical reliability after either cyclic or isothermal annealing. The excellent thermal and electrical properties make these new Cu-alloy films highly promising for applications that require more reliable and inexpensive copper interconnects. In this study, we fabricated Cu alloy films by doping a minute amount of Ge or GeNx, respectively, into the Cu films via barrierless Cu metallization, an inexpensive manufacturing method. Using these newly fabricated alloy films, we were able to eliminate or at least substantially reduce the detrimental interaction between the alloy and the barrierless Si substrate. The Cu(GeNx) films also exhibited high thermal stability, low resistivity and leakage current, and long time-dependent dielectric breakdown (TDDB) lifetimes, making such novel films a candidate for high-quality, economical, and more reliable Cu interconnects.

Frequency-dependent failure mechanisms of nanocrystalline gold interconnect lines under general alternating current

NASA Astrophysics Data System (ADS)

Luo, X. M.; Zhang, B.; Zhang, G. P.

2014-09-01

Thermal fatigue failure of metallization interconnect lines subjected to alternating currents (AC) is becoming a severe threat to the long-term reliability of micro/nanodevices with increasing electrical current density/power. Here, thermal fatigue failure behaviors and damage mechanisms of nanocrystalline Au interconnect lines on the silicon glass substrate have been investigated by applying general alternating currents (the pure alternating current coupled with a direct current (DC) component) with different frequencies ranging from 0.05 Hz to 5 kHz. We observed both thermal fatigue damages caused by Joule heating-induced cyclic strain/stress and electromigration (EM) damages caused by the DC component. Besides, the damage formation showed a strong electrically-thermally-mechanically coupled effect and frequency dependence. At lower frequencies, thermal fatigue damages were dominant and the main damage forms were grain coarsening with grain boundary (GB) cracking/voiding and grain thinning. At higher frequencies, EM damages took over and the main damage forms were GB cracking/voiding of smaller grains and hillocks. Furthermore, the healing effect of the reversing current was considered to elucidate damage mechanisms of the nanocrystalline Au lines generated by the general AC. Lastly, a modified model was proposed to predict the lifetime of the nanocrystalline metal interconnect lines, i.e., that was a competing drift velocity-based approach based on the threshold time required for reverse diffusion/healing to occur.

Two-dimensional optoelectronic interconnect-processor and its operational bit error rate

NASA Astrophysics Data System (ADS)

Liu, J. Jiang; Gollsneider, Brian; Chang, Wayne H.; Carhart, Gary W.; Vorontsov, Mikhail A.; Simonis, George J.; Shoop, Barry L.

2004-10-01

Two-dimensional (2-D) multi-channel 8x8 optical interconnect and processor system were designed and developed using complementary metal-oxide-semiconductor (CMOS) driven 850-nm vertical-cavity surface-emitting laser (VCSEL) arrays and the photodetector (PD) arrays with corresponding wavelengths. We performed operation and bit-error-rate (BER) analysis on this free-space integrated 8x8 VCSEL optical interconnects driven by silicon-on-sapphire (SOS) circuits. Pseudo-random bit stream (PRBS) data sequence was used in operation of the interconnects. Eye diagrams were measured from individual channels and analyzed using a digital oscilloscope at data rates from 155 Mb/s to 1.5 Gb/s. Using a statistical model of Gaussian distribution for the random noise in the transmission, we developed a method to compute the BER instantaneously with the digital eye-diagrams. Direct measurements on this interconnects were also taken on a standard BER tester for verification. We found that the results of two methods were in the same order and within 50% accuracy. The integrated interconnects were investigated in an optoelectronic processing architecture of digital halftoning image processor. Error diffusion networks implemented by the inherently parallel nature of photonics promise to provide high quality digital halftoned images.

Phasor Domain Steady-State Modeling and Design of the DC–DC Modular Multilevel Converter

DOE PAGES

Yang, Heng; Qin, Jiangchao; Debnath, Suman; ...

2016-01-06

The DC-DC Modular Multilevel Converter (MMC), which originated from the AC-DC MMC, is an attractive converter topology for interconnection of medium-/high-voltage DC grids. This paper presents design considerations for the DC-DC MMC to achieve high efficiency and reduced component sizes. A steady-state mathematical model of the DC-DC MMC in the phasor-domain is developed. Based on the developed model, a design approach is proposed to size the components and to select the operating frequency of the converter to satisfy a set of design constraints while achieving high efficiency. The design approach includes sizing of the arm inductor, Sub-Module (SM) capacitor, andmore » phase filtering inductor along with the selection of AC operating frequency of the converter. The accuracy of the developed model and the effectiveness of the design approach are validated based on the simulation studies in the PSCAD/EMTDC software environment. The analysis and developments of this paper can be used as a guideline for design of the DC-DC MMC.« less

Elongated solid electrolyte cell configurations and flexible connections therefor

DOEpatents

Reichner, Philip

1989-01-01

A flexible, high temperature, solid oxide electrolyte electrochemical cell stack configuration is made, comprising a plurality of flattened, elongated, connected cell combinations 1, each cell combination containing an interior electrode 2 having a top surface and a plurality of interior gas feed conduits 3, through its axial length, electrolyte 5 contacting the interior electrode and exterior electrode 8 contacting electrolyte, where a major portion of the air electrode top surface 7 is covered by interconnection material 6, and where each cell has at least one axially elongated, electronically conductive, flexible, porous, metal fiber felt material 9 in electronic connection with the air electrode 2 through contact with a major portion of the interconnection material 6, the metal fiber felt being effective as a shock absorbent body between the cells.

Expanded nickel screen electrical connection supports for solid oxide fuel cells

DOEpatents

Draper, Robert; Antol, Ronald F.; Zafred, Paolo R.

2002-01-01

A solid oxide fuel assembly is made, wherein rows (14, 24) of fuel cells (16, 18, 20, 26, 28, 30), each having an outer interconnection (36) and an outer electrode (32), are disposed next to each other with corrugated, electrically conducting expanded metal mesh (22) between each row of cells, the corrugated mesh (22) having top crown portions (40) and bottom shoulder portions (42), where the top crown portion (40) contacts outer interconnections (36) of the fuel cells (16, 18, 20) in a first row (14), and the bottom shoulder portions (42) contacts outer electrodes (32) of the fuel cells in a second row (24), said mesh electrically connecting each row of fuel cells, and where there are no metal felt connections between any fuel cells.

MHD Electrode and wall constructions

DOEpatents

Way, Stewart; Lempert, Joseph

1984-01-01

Electrode and wall constructions for the walls of a channel transmitting the hot plasma in a magnetohydrodynamic generator. The electrodes and walls are made of a plurality of similar modules which are spaced from one another along the channel. The electrodes can be metallic or ceramic, and each module includes one or more electrodes which are exposed to the plasma and a metallic cooling bar which is spaced from the plasma and which has passages through which a cooling fluid flows to remove heat transmitted from the electrode to the cooling bar. Each electrode module is spaced from and electrically insulated from each adjacent module while interconnected by the cooling fluid which serially flows among selected modules. A wall module includes an electrically insulating ceramic body exposed to the plasma and affixed, preferably by mechanical clips or by brazing, to a metallic cooling bar spaced from the plasma and having cooling fluid passages. Each wall module is, similar to the electrode modules, electrically insulated from the adjacent modules and serially interconnected to other modules by the cooling fluid.

Advanced Flip Chips in Extreme Temperature Environments

NASA Technical Reports Server (NTRS)

Ramesham, Rajeshuni

2010-01-01

The use of underfill materials is necessary with flip-chip interconnect technology to redistribute stresses due to mismatching coefficients of thermal expansion (CTEs) between dissimilar materials in the overall assembly. Underfills are formulated using organic polymers and possibly inorganic filler materials. There are a few ways to apply the underfills with flip-chip technology. Traditional capillary-flow underfill materials now possess high flow speed and reduced time to cure, but they still require additional processing steps beyond the typical surface-mount technology (SMT) assembly process. Studies were conducted using underfills in a temperature range of -190 to 85 C, which resulted in an increase of reliability by one to two orders of magnitude. Thermal shock of the flip-chip test articles was designed to induce failures at the interconnect sites (-40 to 100 C). The study on the reliability of flip chips using underfills in the extreme temperature region is of significant value for space applications. This technology is considered as an enabling technology for future space missions. Flip-chip interconnect technology is an advanced electrical interconnection approach where the silicon die or chip is electrically connected, face down, to the substrate by reflowing solder bumps on area-array metallized terminals on the die to matching footprints of solder-wettable pads on the chosen substrate. This advanced flip-chip interconnect technology will significantly improve the performance of high-speed systems, productivity enhancement over manual wire bonding, self-alignment during die joining, low lead inductances, and reduced need for attachment of precious metals. The use of commercially developed no-flow fluxing underfills provides a means of reducing the processing steps employed in the traditional capillary flow methods to enhance SMT compatibility. Reliability of flip chips may be significantly increased by matching/tailoring the CTEs of the substrate material and the silicon die or chip, and also the underfill materials. Advanced packaging interconnects technology such as flip-chip interconnect test boards have been subjected to various extreme temperature ranges that cover military specifications and extreme Mars and asteroid environments. The eventual goal of each process step and the entire process is to produce components with 100 percent interconnect and satisfy the reliability requirements. Underfill materials, in general, may possibly meet demanding end use requirements such as low warpage, low stress, fine pitch, high reliability, and high adhesion.

Finite Volume Element (FVE) discretization and multilevel solution of the axisymmetric heat equation

NASA Astrophysics Data System (ADS)

Litaker, Eric T.

1994-12-01

The axisymmetric heat equation, resulting from a point-source of heat applied to a metal block, is solved numerically; both iterative and multilevel solutions are computed in order to compare the two processes. The continuum problem is discretized in two stages: finite differences are used to discretize the time derivatives, resulting is a fully implicit backward time-stepping scheme, and the Finite Volume Element (FVE) method is used to discretize the spatial derivatives. The application of the FVE method to a problem in cylindrical coordinates is new, and results in stencils which are analyzed extensively. Several iteration schemes are considered, including both Jacobi and Gauss-Seidel; a thorough analysis of these schemes is done, using both the spectral radii of the iteration matrices and local mode analysis. Using this discretization, a Gauss-Seidel relaxation scheme is used to solve the heat equation iteratively. A multilevel solution process is then constructed, including the development of intergrid transfer and coarse grid operators. Local mode analysis is performed on the components of the amplification matrix, resulting in the two-level convergence factors for various combinations of the operators. A multilevel solution process is implemented by using multigrid V-cycles; the iterative and multilevel results are compared and discussed in detail. The computational savings resulting from the multilevel process are then discussed.

Optical link by using optical wiring method for reducing EMI

NASA Astrophysics Data System (ADS)

Cho, In-Kui; Kwon, Jong-Hwa; Choi, Sung-Woong; Bondarik, Alexander; Yun, Je-Hoon; Kim, Chang-Joo; Ahn, Seung-Beom; Jeong, Myung-Yung; Park, Hyo Hoon

2008-12-01

A practical optical link system was prepared with a transmitter (Tx) and receiver (Rx) for reducing EMI (electromagnetic interference). The optical TRx module consisted of a metal optical bench, a module printed circuit board (PCB), a driver/receiver IC, a VCSEL/PD array, and an optical link block composed of plastic optical fiber (POF). For the optical interconnection between the light-sources and detectors, an optical wiring method has been proposed to enable easy assembly. The key benefit of fiber optic link is the absence of electromagnetic interference (EMI) noise creation and susceptibility. This paper provides a method for optical interconnection between an optical Tx and an optical Rx, comprising the following steps: (i) forming a light source device, an optical detection device, and an optical transmission unit on a substrate (metal optical bench (MOB)); (ii) preparing a flexible optical transmission-connection medium (optical wiring link) to optically connect the light source device formed on the substrate with the optical detection device; and (iii) directly connecting one end of the surface-finished optical transmission connection medium with the light source device and the other end with the optical detection device. Electronic interconnections have uniquely electronic problems such as EMI, shorting, and ground loops. Since these problems only arise during transduction (electronics-to-optics or opticsto- electronics), the purely optical part and optical link(interconnection) is free of these problems. 1 An optical link system constructed with TRx modules was fabricated and the optical characteristics about data links and EMI levels were measured. The results clearly demonstrate that the use of an optical wiring method can provide robust and cost-effective assembly for reducing EMI of inter-chip interconnect. We successfully achieved a 4.5 Gb/s data transmission rate without EMI problems.

Cantilevered multilevel LIGA devices and methods

DOEpatents

Morales, Alfredo Martin; Domeier, Linda A.

2002-01-01

In the formation of multilevel LIGA microstructures, a preformed sheet of photoresist material, such as polymethylmethacrylate (PMMA) is patterned by exposure through a mask to radiation, such as X-rays, and developed using a developer to remove the exposed photoresist material. A first microstructure is then formed by electroplating metal into the areas from which the photoresist has been removed. Additional levels of microstructure are added to the initial microstructure by covering the first microstructure with a conductive polymer, machining the conductive polymer layer to reveal the surface of the first microstructure, sealing the conductive polymer and surface of the first microstructure with a metal layer, and then forming the second level of structure on top of the first level structure. In such a manner, multiple layers of microstructure can be built up to allow complex cantilevered microstructures to be formed.

Board-to-board optical interconnection using novel optical plug and slot

NASA Astrophysics Data System (ADS)

Cho, In K.; Yoon, Keun Byoung; Ahn, Seong H.; Kim, Jin Tae; Lee, Woo Jin; Shin, Kyoung Up; Heo, Young Un; Park, Hyo Hoon

2004-10-01

A novel optical PCB with transmitter/receiver system boards and optical bakcplane was prepared, which is board-to-board interconnection by optical plug and slot. We report an 8Gb/s PRBS NRZ data transmission between transmitter system board and optical backplane embedded multimode polymeric waveguide arrays. The basic concept of ETRI's optical PCB is as follows; 1) Metal optical bench is integrated with optoelectronic devices, driver and receiver circuits, polymeric waveguide and access line PCB module. 2) Multimode polymeric waveguide inside an optical backplane, which is embedded into PCB. 3) Optical slot and plug for high-density(channel pitch : 500um) board-to-board interconnection. The polymeric waveguide technology can be used for transmission of data on transmitter/ receiver system boards and for backplane interconnections. The main components are low-loss tapered polymeric waveguides and a novel optical plug and slot for board-to-board interconnections, respectively. The optical PCB is characteristic of low coupling loss, easy insertion/extraction of the boards and, especially, reliable optical coupling unaffected from external environment after board insertion.

Copper Nanowire Production for Interconnect Applications

NASA Technical Reports Server (NTRS)

Han, Jin-Woo (Inventor); Meyyappan, Meyya (Inventor)

2014-01-01

A method of fabricating metallic Cu nanowires with lengths up to about 25 micrometers and diameters in a range 20-100 nanometers, or greater if desired. Vertically oriented or laterally oriented copper oxide structures (CuO and/or Cu2O) are grown on a Cu substrate. The copper oxide structures are reduced with 99+ percent H or H2, and in this reduction process the lengths decrease (to no more than about 25 micrometers), the density of surviving nanostructures on a substrate decreases, and the diameters of the surviving nanostructures have a range, of about 20-100 nanometers. The resulting nanowires are substantially pure Cu and can be oriented laterally (for local or global interconnects) or can be oriented vertically (for standard vertical interconnects).

Metallization of Large Silicon Wafers

NASA Technical Reports Server (NTRS)

Pryor, R. A.

1978-01-01

A metallization scheme was developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300 C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed.

Electromigration-induced void grain-boundary interactions: The mean time to failure for copper interconnects with bamboo and near-bamboo structures

NASA Astrophysics Data System (ADS)

Ogurtani, Tarik Omer; Oren, Ersin Emre

2004-12-01

A well-posed moving boundary-value problem, describing the dynamics of curved interfaces and surfaces associated with voids and/or cracks that are interacting with grain boundaries, is obtained. Extensive computer simulations are performed for void configuration evolution during intergranular motion, under the actions of capillary and electromigration forces in thin-film metallic interconnects with bamboo structures. The analysis of experimental data, utilizing the mean time to failure formulas derived in this paper, gives consistent values for the interface diffusion coefficients and enthalpies of voids. 5.85×10-5exp(-0.95eV/kT)m2s-1 is the value obtained for voids that form in the interior of the copper interconnects avoiding any surface contamination. 1.80×10-4exp(-1.20eV/kT)m2s-1 is obtained for those voids that nucleate either at triple junctions or at the grain-boundary technical surface intersections (grain-boundary groove), where the chemical impurities such as Si, O, S, and even C are segregated during the metallization and annealing processes and may act as trap centers for hopping vacancies.

Maximizing tandem solar cell power extraction using a three-terminal design

DOE PAGES

Warren, Emily L.; Deceglie, Michael G.; Rienacker, Michael; ...

2018-04-09

Three-terminal tandem solar cells can provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects.

Maximizing tandem solar cell power extraction using a three-terminal design

DOE PAGES

Warren, Emily L.; Deceglie, Michael G.; Rienäcker, Michael; ...

2018-01-01

Three-terminal tandem solar cells can provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects.

Long-term evaluation of solid oxide fuel cell candidate materials in a 3-cell generic stack test fixture, part III: Stability and microstructure of Ce-(Mn,Co)-spinel coating, AISI441 interconnect, alumina coating, cathode and anode

NASA Astrophysics Data System (ADS)

Chou, Yeong-Shyung; Stevenson, Jeffry W.; Choi, Jung-Pyung

2014-07-01

A generic solid oxide fuel cell stack test fixture was developed to evaluate candidate materials and processing under realistic conditions. Part III of the work investigated the stability of Ce-(Mn,Co) spinel coating, AISI441 metallic interconnect, alumina coating, and cell's degradation. After 6000 h test, the spinel coating showed densification with some diffusion of Cr. At the metal interface, segregation of Si and Ti was observed, however, no continuous layer formed. The alumina coating for perimeter sealing areas appeared more dense and thick at the air side than the fuel side. Both the spinel and alumina coatings remained bonded. EDS analysis of Cr within the metal showed small decrease in concentration near the coating interface and would expect to cause no issue of Cr depletion. Inter-diffusion of Ni, Fe, and Cr between spot-welded Ni wire and AISI441 interconnect was observed and Cr-oxide scale formed along the circumference of the weld. The microstructure of the anode and cathode was discussed relating to degradation of the top and middle cells. Overall, the Ce-(Mn,Co) spinel coating, alumina coating, and AISI441 steel showed the desired long-term stability and the developed generic stack fixture proved to be a useful tool to validate candidate materials for SOFC.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2000-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2001-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

CoxFe1-x oxide coatings on metallic interconnects for solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Shen, Fengyu; Lu, Kathy

2016-10-01

In order to improve the performance of Cr-containing steel as an interconnect material for solid oxide fuel cells, CoFe alloy coatings with Co:Fe ratios of 9:1, 8:2, 7:3, 6:4, and 5:5 are deposited by electrodeposition and then oxidized to CoxFe1-x oxide coatings with a thickness of ∼6 μm as protective layers on the interconnect. The area specific resistance of the coated interconnect increases with the Fe content. Higher Co content oxide coatings are more effective in limiting the growth of the chromia scale while all coatings are effective in inhibiting Cr diffusion and evaporation. With the Co0.8Fe0.2 oxide coated interconnect, the electrochemical performance of the Sm0.5Sr0.5Co0.2Fe0.8O3 cathode is improved. Only 1.54 atomic percentage of Cr is detected on the surface of the Sm0.5Sr0.5Co0.2Fe0.8O3 cathode while no Cr is detected 0.66 μm or more into the cathode. CoxFe1-x oxide coatings are promising candidates for solid oxide fuel cell interconnects with the advantage of using existing cathode species for compatibility and performance enhancement.

Competing Forces of Socioeconomic Development and Environmental Degradation on Health and Happiness for Different Income Groups in China.

PubMed

Gu, Lijuan; Rosenberg, Mark W; Zeng, Juxin

2017-10-01

China's rapid socioeconomic growth in recent years and the simultaneous increase in many forms of pollution are generating contradictory pictures of residents' well-being. This paper applies multilevel analysis to the 2013 China General Social Survey data on social development and health to understand this twofold phenomenon. Multilevel models are developed to investigate the impact of socioeconomic development and environmental degradation on self-reported health (SRH) and self-reported happiness (SRHP), differentiating among lower, middle, and higher income groups. The results of the logit multilevel analysis demonstrate that income, jobs, and education increased the likelihood of rating SRH and SRHP positively for the lower and middle groups but had little or no effect on the higher income group. Having basic health insurance had an insignificant effect on health but increased the likelihood of happiness among the lower income group. Provincial-level pollutants were associated with a higher likelihood of good health for all income groups, and community-level industrial pollutants increased the likelihood of good health for the lower and middle income groups. Measures of community-level pollution were robust predictors of the likelihood of unhappiness among the lower and middle income groups. Environmental hazards had a mediating effect on the relationship between socioeconomic development and health, and socioeconomic development strengthened the association between environmental hazards and happiness. These outcomes indicate that the complex interconnections among socioeconomic development and environmental degradation have differential effects on well-being among different income groups in China.

A new active solder for joining electronic components

DOE Office of Scientific and Technical Information (OSTI.GOV)

SMITH,RONALD W.; VIANCO,PAUL T.; HERNANDEZ,CYNTHIA L.

Electronic components and micro-sensors utilize ceramic substrates, copper and aluminum interconnect and silicon. The joining of these combinations require pre-metallization such that solders with fluxes can wet such combinations of metals and ceramics. The paper will present a new solder alloy that can bond metals, ceramics and composites. The alloy directly wets and bonds in air without the use flux or premetallized layers. The paper will present typical processing steps and joint microstructures in copper, aluminum, aluminum oxide, aluminum nitride, and silicon joints.

Metallization failures

NASA Technical Reports Server (NTRS)

Beatty, R.

1971-01-01

Metallization-related failure mechanisms were shown to be a major cause of integrated circuit failures under accelerated stress conditions, as well as in actual use under field operation. The integrated circuit industry is aware of the problem and is attempting to solve it in one of two ways: (1) better understanding of the aluminum system, which is the most widely used metallization material for silicon integrated circuits both as a single level and multilevel metallization, or (2) evaluating alternative metal systems. Aluminum metallization offers many advantages, but also has limitations particularly at elevated temperatures and high current densities. As an alternative, multilayer systems of the general form, silicon device-metal-inorganic insulator-metal, are being considered to produce large scale integrated arrays. The merits and restrictions of metallization systems in current usage and systems under development are defined.

Voltage gradients in solar array cavities as possible breakdown sites in spacecraft-charging-induced discharges

NASA Technical Reports Server (NTRS)

Stevens, N. J.; Mills, H. E.; Orange, L.

1981-01-01

A possible explanation for environmentally-induced discharges on geosynchronous satellites exists in the electric fields formed in the cavities between solar cells - the small gaps formed by the cover slides, solar cells, metallic interconnects and insulating substrate. When exposed to a substorm environment, the cover slides become less negatively charged than the spacecraft ground. If the resultant electric field becomes large enough, then the interconnect could emit electrons (probably by field emission) which could be accelerated to space by the positive voltage on the covers. An experimental study was conducted using a small solar array segment in which the interconnect potential was controlled by a power supply while the cover slides were irradiated by monoenergetic electrons. It was found that discharges could be triggered when the interconnect potential became at least 500 volts negative with respect to the cover slides. Analytical modeling of satellites exposed to substorm environments indicates that such gradients are possible. Therefore, it appears that this trigger mechanism for discharges is possible.

Core Formation: an Experimental Study of Metallic Melt-Silicate Segregation

NASA Astrophysics Data System (ADS)

Herpfer, M. A.; Larimer, J. W.

1993-07-01

To a large extent, the question of how metallic cores form reduces to the problem of understanding the surface tension between metallic melts and silicates [1]. This problem was addressed by performing experiments to determine the surface tensions between metallic melts with variable S contents and the silicate phases (olivine and orthopyroxene) expected in planetary mantles. The experiments were conducted in a piston-cylinder apparatus at P = 1GPa and T = 1250-1450 degrees C. Textural and chemical equilibration was confirmed in several ways: theoretical estimates were checked by conducting a series of experiments at progressively longer times (up to 72 hrs) until phase composition and dihedral angle ceased to change and the distribution of measured "apparent" angles matched the standard cumulative frequency curve. The dihedral "wetting" angles (theta) were measured from high resolution photomicrgraphs using a 10X optical protractor; 100-400 measurements were made for most experiments. The dihedral angle is related to the ratio of interfacial energies: gamma(sub)ss/gamma(sub)sl = 2 cos(theta/2), where gamma(sub)ss and gamma(sub)sl are the interfacial energies between solid-solid and liquid-solid. Since data exist for the pertinent solid-solid energies, the liquid-solid interfacial energies can be computed from measured theta values. However, the important relations are best expressed in terms of theta values. The extent to which a melt is interconnected along grain boundaries, and hence able to flow and segregate depends on the value of theta and the fraction of melt present. When theta < 60 degrees, the liquid can be interconnected at all melt fractions but when theta > 60 degrees, the melt fraction must be at least 1 vol% and increses as theta increases. Actually there is a predicted effect, analogous to a hysteresis effect, where for a given theta value the amount of melt that needs to be added for interconnection is greater than the amount left when the melt disconnects (pinches off). In our experiments, where dense metallic melt drained away, the disconnect theta values match the theoretical predictions. The composition of the metallic melt in the experiments was varied from stoichiometric FeS to Fe/S ratios near the the eutectic and on to more Fe rich compositons. The theta values vary in a systematic manner; for example, for melts in contact with olivine at 1300 degrees C the theta values range from 67 degrees for FeS to 55 degrees at the eutectic and back toward higher values at higher Fe contents. Theoretical considerations indicate that eutectic compositions are expected to have the lowest theta values, just as observed. The theta values indicate that melts with eutectic composition can interconnect and segregate at 1-2 vol% melt fraction at 1300 degrees C. Some previous estimates of the melt fraction required for interconnection are much higher [2,3], but the inferences were drawn from experiments that were not designed to test for textural equilibrium, fraction of melt present, etc. The present experiments clearly show that metallic melts can readily segregate from solid silicates. Simple extrapolations to other phases, compositions and PT conditions provide a rather complete picture of how the "plumbing" worked in the mantles of planetary objects during the initial stages of core segregation. References: [1] Stevenson D. J. (1990) In Origin of the Earth, 231-249. [2] Taylor G. J. (1989) LPSC XX, 1109. [3] Walker D. and Agee C. B. Meteor. 23, 81-91.

Integrated analysis of engine structures

NASA Technical Reports Server (NTRS)

Chamis, C. C.

1981-01-01

The need for light, durable, fuel efficient, cost effective aircraft requires the development of engine structures which are flexible, made from advaced materials (including composites), resist higher temperatures, maintain tighter clearances and have lower maintenance costs. The formal quantification of any or several of these requires integrated computer programs (multilevel and/or interdisciplinary analysis programs interconnected) for engine structural analysis/design. Several integrated analysis computer prorams are under development at Lewis Reseach Center. These programs include: (1) COBSTRAN-Composite Blade Structural Analysis, (2) CODSTRAN-Composite Durability Structural Analysis, (3) CISTRAN-Composite Impact Structural Analysis, (4) STAEBL-StruTailoring of Engine Blades, and (5) ESMOSS-Engine Structures Modeling Software System. Three other related programs, developed under Lewis sponsorship, are described.

High density circuit technology, part 1

NASA Technical Reports Server (NTRS)

Wade, T. E.

1982-01-01

The metal (or dielectric) lift-off processes used in the semiconductor industry to fabricate high density very large scale integration (VLSI) systems were reviewed. The lift-off process consists of depositing the light-sensitive material onto the wafer and patterning first in such a manner as to form a stencil for the interconnection material. Then the interconnection layer is deposited and unwanted areas are lifted off by removing the underlying stencil. Several of these lift-off techniques were examined experimentally. The use of an auxiliary layer of polyimide to form a lift-off stencil offers considerable promise.

Double interconnection fuel cell array

DOEpatents

Draper, R.; Zymboly, G.E.

1993-12-28

A fuel cell array is made, containing number of tubular, elongated fuel cells which are placed next to each other in rows (A, B, C, D), where each cell contains inner electrodes and outer electrodes, with solid electrolyte between the electrodes, where the electrolyte and outer electrode are discontinuous, having two portions, and providing at least two opposed discontinuities which contain at least two oppositely opposed interconnections contacting the inner electrode, each cell having only three metallic felt electrical connectors which contact surrounding cells, where each row is electrically connected to the other. 5 figures.

Organic active materials for batteries

DOEpatents

Abouimrane, Ali; Weng, Wei; Amine, Khalil

2016-08-16

A rechargeable battery includes a compound having at least two active sites, R.sup.1 and R.sup.2; wherein the at least two active sites are interconnected by one or more conjugated moieties; each active site is coordinated to one or more metal ions M.sup.a+ or each active site is configured to coordinate to one or more metal ions; and "a" is 1, 2, or 3.

Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

NASA Astrophysics Data System (ADS)

Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman

2016-05-01

We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

Phase Two of the Array Automated Assembly Task for the Low Cost Solar Array Project

NASA Technical Reports Server (NTRS)

Campbell, R. B.; Page, D. J.; Rai-Choudhury, P.; Seman, E. J.; Hanes, M. H.; Rohatgi, A.; Davis, J. R.

1979-01-01

Various top contact metal systems were studied. Only Ti Pd Cu approaches baseline (Ti Pd Ag) quality, but this system shows a lack of long term stability. Aluminum back surface field structures were fabricated and thicknesses of p superscript + material of up to 7.0 microns were achieved with open circuit voltages of 0.59V. A general purpose ultrasonic welder was purchased and tests using various metal foils are under way. During fabrication of the demonstration module, several cells became cracked. Due to redundancy of interconnections, the module was not open circuited but the efficiency was reduced to 8.8%. The broken cell was interconnected with a strap across the back and the efficiency was increased to 11.5%. A cost analysis was made and the results indicate a selling price of $0.56/watt peak (in 1986 with 1975 dollars).

Thick-film materials for silicon photovoltaic cell manufacture

NASA Technical Reports Server (NTRS)

Field, M. B.

1977-01-01

Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

Bio-inspired immobilization of metal oxides on monolithic microreactor for continuous Knoevenagel reaction.

PubMed

Song, Wentong; Shi, Da; Tao, Shengyang; Li, Zhaoliang; Wang, Yuchao; Yu, Yongxian; Qiu, Jieshan; Ji, Min; Wang, Xinkui

2016-11-01

A facile method is reported to construct monolithic microreactor with high catalytic performance for Knoevenagel reaction. The microreactor is based on hierarchically porous silica (HPS) which has interconnected macro- and mesopores. Then the HPS is surface modified by pyrogallol (PG) polymer. Al(NO3)3 and Mg(NO3)2 are loaded on the surface of HPS through coordination with -OH groups of PG. After thermal treatment, Al(NO3)3 and Mg(NO3)2 are converted Al2O3 and MgO. The as-synthesized catalytic microreactor shows a high and stable performance in Knoevenagel reaction. The microreactor possess large surface area and interconnected pore structures which are beneficial for reactions. Moreover, this economic, facile and eco-friendly surface modification method can be used in loading more metal oxides for more reactions. Copyright © 2016 Elsevier Inc. All rights reserved.

Toward a Stress Process Model of Children’s Exposure to Physical Family and Community Violence

PubMed Central

Brooks-Gunn, Jeanne

2011-01-01

Theoretically informed models are required to further the comprehensive understanding of children’s ETV. We draw on the stress process paradigm to forward an overall conceptual model of ETV (ETV) in childhood and adolescence. Around this conceptual model, we synthesize research in four dominant areas of the literature which are detailed but often disconnected including: (1) exposure to three forms of physical violence (e.g., child physical maltreatment, interparental violence, and community ETV); (2) the multilevel correlates and causes of ETV (e.g., neighborhood characteristics including concentrated disadvantage; family characteristics including socio-economic status and family stressors); (3) a range of consequences of ETV (e.g., internalizing and externalizing mental health problems, role transitions, and academic outcomes); and (4) multilevel and cross domain mediators and moderators of ETV influences (e.g., school and community factors, family social support, and individual coping resources). We highlight the range of interconnected processes through which violence exposures may influence children and suggest opportunities for prevention and intervention. We further identify needed future research on children’s ETV including coping resources as well as research on cumulative contributions of violence exposure, violence exposure modifications, curvilinearity, and timing of exposure. PMID:19434492

Processing and characterization of device solder interconnection and module attachment for power electronics modules

NASA Astrophysics Data System (ADS)

Haque, Shatil

This research is focused on the processing of an innovative three-dimensional packaging architecture for power electronics building blocks with soldered device interconnections and subsequent characterization of the module's critical interfaces. A low-cost approach termed metal posts interconnected parallel plate structure (MPIPPS) was developed for packaging high-performance modules of power electronics building blocks (PEBB). The new concept implemented direct bonding of copper posts, not wire bonding of fine aluminum wires, to interconnect power devices as well as joining the different circuit planes together. We have demonstrated the feasibility of this packaging approach by constructing PEBB modules (consisting of Insulated Gate Bipolar Transistors (IGBTs), diodes, and a few gate driver elements and passive components). In the 1st phase of module fabrication with IGBTs with Si3N 4 passivation, we had successfully fabricated packaged devices and modules using the MPIPPS technique. These modules were tested electrically and thermally, and they operated at pulse-switch and high power stages up to 6kW. However, in the 2nd phase of module fabrication with polyimide passivated devices, we experienced significant yield problems due to metallization difficulties of these devices. The under-bump metallurgy scheme for the development of a solderable interface involved sputtering of Ti-Ni-Cu and Cr-Cu, and an electroless deposition of Zn-Ni-Au metallization. The metallization process produced excellent yield in the case of Si3N4 passivated devices. However, under the same metallization schemes, devices with a polyimide passivation exhibited inconsistent electrical contact resistance. We found that organic contaminants such as hydrocarbons remain in the form of thin monolayers on the surface, even in the case of as-received devices from the manufacturer. Moreover, in the case of polyimide passivated devices, plasma cleaning introduced a few carbon constituents on the surface, which was not observed in the case of Si3N4 passivated devices. X-Ray Photoelectron Spectroscopy (XPS) Spectra showed evidence of possible carbon contaminants, such as carbide (˜282.9eV) and graphite (˜284.3eV) on the surface at binding energies below the binding energy of the hydrocarbon peak (C 1s at 285eV). Whereas above the hydrocarbon peak energy level, carbon-nitrogen compounds, single bond carbon compounds (˜285.9eV) and double bond carbon compounds (˜288.5eV) were evident. The majority of the carbon composition on the pad surface was associated with hydrocarbons, which were hydrophobic in nature, thus making the device contact pad less wettable. (Abstract shortened by UMI.)

Chip-to-chip interconnects based on 3D stacking of optoelectrical dies on Si

NASA Astrophysics Data System (ADS)

Duan, P.; Raz, O.; Smalbrugge, B. E.; Duis, J.; Dorren, H. J. S.

2012-01-01

We demonstrate a new approach to increase the optical interconnection bandwidth density by stacking the opto-electrical dies directly on the CMOS driver. The suggested implementation is aiming to provide a wafer scale process which will make the use of wire bonding redundant and will allow for impedance matched metallic wiring between the electronic driving circuit and its opto-electronic counter part. We suggest the use of a thick photoresist ramp between CMOS driver and opto-electrical dies surface as the bridge for supporting co-plannar waveguides (CPW) electrically plated with lithographic accuracy. In this way all three dimensions of the interconnecting metal layer, width, length and thickness can be completely controlled. In this 1st demonstration all processing is done on commercially available devices and products, and is compatible with CMOS processing technology. To test the applicability of CPW instead of wire bonds for interconnecting the CMOS circuit and opto-electronic chips, we have made test samples and tested their performance at speeds up to 10 Gbps. In this demonstration, a silicon substrate was used on which we evaporated gold co-planar waveguides (CPW) to mimic a wire on the driver. An optical link consisting of a VCSEL chip and a photodiode chip has been assembled and fully characterized using optical coupling into and out of a multimode fiber (MMF). A 10 Gb/s 27-1 NRZ PRBS signal transmitted from one chip to another chip was detected error free. A 4 dB receiver sensitivity penalty is measured for the integrated device compared to a commercial link.

Multilevel control of the metastable states in a manganite film

NASA Astrophysics Data System (ADS)

Jin, Feng; Feng, Qiyuan; Guo, Zhuang; Lan, Da; Chen, Binbin; Xu, Haoran; Wang, Ze; Wang, Lingfei; Gao, Guanyin; Chen, Feng; Lu, Qingyou; Wu, Wenbin

2017-06-01

For high density memory applications, the dynamic switching between multilevel resistance states per cell is highly desirable, and for oxide-based memory devices, the multistate operation has been actively explored. We have previously shown that for La2/3Ca1/3MnO3 films, the antiferromagnetic charge-ordered-insulator (COI) phase can be induced via the anisotropic epitaxial strain, and it competes with the doping-determined ferromagnetic-metal (FMM) ground state in a wide temperature range. Here, we show that for the phase competitions, in various magnetic fields and/or thermal cycling, the reappearance of the COI phase and thus the resistance and magnetization can be manipulated and quantified in a multilevel manner at lower temperatures. Furthermore, by using a high-field magnetic force microscope, we image the COI/FMM domain structures in accordance with the transport measurements, and find that the evolving domains or the phase fraction ratios do underline the metastability of the reappeared COI droplets, possibly protected by the energy barriers due to accommodation strain. These results may add new insights into the design and fabrication of future multilevel memory cells.

Reliability of spring interconnects for high channel-count polyimide electrode arrays

NASA Astrophysics Data System (ADS)

Khan, Sharif; Ordonez, Juan Sebastian; Stieglitz, Thomas

2018-05-01

Active neural implants with a high channel-count need robust and reliable operational assembly for the targeted environment in order to be classified as viable fully implantable systems. The discrete functionality of the electrode array and the implant electronics is vital for intact assembly. A critical interface exists at the interconnection sites between the electrode array and the implant electronics, especially in hybrid assemblies (e.g. retinal implants) where electrodes and electronics are not on the same substrate. Since the interconnects in such assemblies cannot be hermetically sealed, reliable protection against the physiological environment is essential for delivering high insulation resistance and low defusibility of salt ions, which are limited in complexity by current assembly techniques. This work reports on a combination of spring-type interconnects on a polyimide array with silicone rubber gasket insulation for chronically active implantable systems. The spring design of the interconnects on the backend of the electrode array compensates for the uniform thickness of the sandwiched gasket during bonding in assembly and relieves the propagation of extrinsic stresses to the bulk polyimide substrate. The contact resistance of the microflex-bonded spring interconnects with the underlying metallized ceramic test vehicles and insulation through the gasket between adjacent contacts was investigated against the MIL883 standard. The contact and insulation resistances remained stable in the exhausting environmental conditions.

Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

PubMed

Nam, SungWoo; Jiang, Xiaocheng; Xiong, Qihua; Ham, Donhee; Lieber, Charles M

2009-12-15

Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) field-effect transistors (FETs). The DC voltage output (V(out)) versus input (V(in)) response of vertically interconnected CMOS inverters showed sharp switching at close to the ideal value of one-half the supply voltage and, moreover, exhibited substantial DC gain of approximately 45. The gain and the rail-to-rail output switching are consistent with the large noise margin and minimal static power consumption of CMOS. Vertically interconnected, three-stage CMOS ring oscillators were also fabricated by using layer-1 InAs NW n-FETs and layer-2 Ge/Si NW p-FETs. Significantly, measurements of these circuits demonstrated stable, self-sustained oscillations with a maximum frequency of 108 MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanoscale materials. These results highlight the flexibility of bottom-up assembly of distinct nanoscale materials and suggest substantial promise for 3D integrated circuits.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rasit Koc; Geoffrey Swift; Hua Xie

Solid oxide fuel cell interconnect materials must meet stringent requirements. Such interconnects must operate at temperatures approaching 800 C while resisting oxidation and reduction, which can occur from the anode and cathode materials and the operating environment. They also must retain their electrical conductivity under these conditions and possess compatible coefficients of thermal expansion as the anode and cathode. Results are presented in this report for fuel cell interconnect candidate materials currently under investigation based upon nano-size titanium carbide (TiC) powders. The TiC is liquid phase sintered with either nickel (Ni) or nickel-aluminide (Ni{sub 3}Al) in varying concentrations. The oxidationmore » resistance of the submicron grain TiC-metal materials is presented as a function weight change versus time at 700 C and 800 C for varying content of metal/intermetallic in the system. Electrical conductivity at 800 C as a function of time is also presented for TiC-Ni to demonstrate the vitality of these materials for interconnect applications. TGA studies showed that the weight gain was 0.8 mg/cm{sup 2} for TiC(30)-Ni(30wt.%) after 100 hours in wet air at 800 C and the weight gain was calculated to be 0.5205 mg/cm{sup 2} for TiC(30)- Ni(10 wt.%) after 100 hours at 700 C and 100 hours at 800 C. At room temperature the electrical conductivity was measured to be 2444 1/[ohm.cm] for TiC-Ni compositions. The electrical conductivities at 800 C in air was recorded to be 19 1/[ohm.cm] after 125 hours. Two identical samples were supplied to PNNL (Dr. Jeff Stevenson) for ASR testing during the pre-decision period and currently they are being tested there. Fabrication, oxidation resistance and electrical conductivity studies indicate that TiC-Ni-Ni{sub 3}Al ternary appears to be a very important system for the development of interconnect composition for solid oxide fuel cells.« less

Method for producing solar energy panels by automation

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1978-01-01

A solar cell panel was fabricated by photoetching a pattern of collector grid systems with appropriate interconnections and bus bar tabs into a glass or plastic sheet. These regions were then filled with a first, thin conductive metal film followed by a layer of a mixed metal oxide, such as InAsO or InSnO. The multiplicity of solar cells were bonded between the protective sheet at the sites of the collector grid systems and a back electrode substrate by conductive metal filled epoxy to complete the fabrication of an integrated solar panel.

Advanced materials and design for low temperature SOFCs

DOEpatents

Wachsman, Eric D.; Yoon, Heesung; Lee, Kang Taek; Camaratta, Matthew; Ahn, Jin Soo

2016-05-17

Embodiments of the invention are directed to SOFC with a multilayer structure comprising a porous ceramic cathode, optionally a cathodic triple phase boundary layer, a bilayer electrolyte comprising a cerium oxide comprising layer and a bismuth oxide comprising layer, an anion functional layer, and a porous ceramic anode with electrical interconnects, wherein the SOFC displays a very high power density at temperatures below 700.degree. C. with hydrogen or hydrocarbon fuels. The low temperature conversion of chemical energy to electrical energy allows the fabrication of the fuel cells using stainless steel or other metal alloys rather than ceramic conductive oxides as the interconnects.

Process development for automated solar cell and module production. Task 4: Automated array assembly

NASA Technical Reports Server (NTRS)

1980-01-01

A process sequence which can be used in conjunction with automated equipment for the mass production of solar cell modules for terrestrial use was developed. The process sequence was then critically analyzed from a technical and economic standpoint to determine the technological readiness of certain process steps for implementation. The steps receiving analysis were: back contact metallization, automated cell array layup/interconnect, and module edge sealing. For automated layup/interconnect, both hard automation and programmable automation (using an industrial robot) were studied. The programmable automation system was then selected for actual hardware development.

High-resolution determination of the stress in individual interconnect lines and the variation due to electromigration

NASA Astrophysics Data System (ADS)

Ma, Qing; Chiras, S.; Clarke, D. R.; Suo, Z.

1995-08-01

Large tensile stresses usually exist in metallic interconnect lines on silicon substrates as a result of thermal mismatch. When a current is subsequently passed any divergence of atomic flux can create superimposed stress variations along the line. Together, these stresses can significantly influence the growth of voids and therefore affect interconnect reliability. In this work, a high-resolution (˜2 μm) optical spectroscopy method has been used to measure the localized stresses around passivated aluminum lines on a silicon wafer, both as-fabricated and after electromigration testing. The method is based on the piezospectroscopic properties of silicon, specifically the frequency shift of the Raman line at 520 R cm-1. By focusing a laser beam at points adjacent to the aluminum lines, the Raman signal was excited and collected. The stresses in the aluminum lines can then be derived from the stresses in the silicon using finite element methods. Large variations of stress along an electromigration-tested line were observed and compared to a theoretical model based on differences in effective diffusivities from grain to grain in a polycrystalline interconnect line.

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

NASA Technical Reports Server (NTRS)

Routh, D. E.; Sharma, G. C. (Inventor)

1984-01-01

An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device.

Hybrid microcircuit metallization system for the SLL micro actuator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hampy, R. E.; Knauss, G. L.; Komarek, E. E.

1976-03-01

A thin film technique developed for the SLL Micro Actuator in which both gold and aluminum can be incorporated on sapphire or fine grained alumina substrates in a two-level metallization system is described. Tungsten is used as a lateral transition metal permitting electrical contact between the gold and aluminum without the two metals coming in physical contact. Silicon dioxide serves as an insulator between the tungsten and aluminum for crossover purposes, and vias through the silicon dioxide permit interconnections where desired. Tungsten-gold is the first level conductor except at crossovers where tungsten only is used and aluminum is the secondmore » level conductor. Sheet resistances of the two levels can be as low as 0.01 ohm/square. Line widths and spaces as small as 0.025 mm can be attained. A second layer of silicon dioxide is deposited over the metallization and opened for all gold and aluminum bonding areas. The metallization system permits effective interconnection of a mixture of devices having both gold and aluminum terminations without creating undesirable gold-aluminum interfaces. Processing temperatures up to 400/sup 0/C can be tolerated for short times without effect on bondability, conductor, and insulator characteristics, thus permitting silicon-gold eutectic die attachment, component soldering, and higher temperatures during gold lead bonding. Tests conducted on special test pattern circuits indicate good stability over the temperature range -55 to +150/sup 0/C. Aging studies indicate no degradation in characteristics in tests of 500 h duration at 150/sup 0/C.« less

Multi-level multi-thermal-electron FDTD simulation of plasmonic interaction with semiconducting gain media: applications to plasmonic amplifiers and nano-lasers.

PubMed

Chen, X; Bhola, B; Huang, Y; Ho, S T

2010-08-02

Interactions between a semiconducting gain medium and confined plasmon-polaritons are studied using a multilevel multi-thermal-electron finite-difference time-domain (MLMTE-FDTD) simulator. We investigated the amplification of wave propagating in a plasmonic metal-semiconductor-metal (MSM) waveguide filled with semiconductor gain medium and obtained the conditions required to achieve net optical gain. The MSM gain waveguide is used to form a plasmonic semiconductor nano-ring laser(PSNRL) with an effective mode volume of 0.0071 microm3, which is about an order of magnitude smaller than the smallest demonstrated integrated photonic crystal based laser cavities. The simulation shows a lasing threshold current density of 1kA/cm2 for a 300 nm outer diameter ring cavity with 80 nm-wide ring. This current density can be realistically achieved in typical III-V semiconductor, which shows the experimental feasibility of the proposed PSNRL structure.

49 CFR 192.467 - External corrosion control: Electrical isolation.

Code of Federal Regulations, 2013 CFR

2013-10-01

... submerged pipeline must be electrically isolated from other underground metallic structures, unless the pipeline and the other structures are electrically interconnected and cathodically protected as a single... pipeline is necessary to facilitate the application of corrosion control. (c) Except for unprotected copper...

49 CFR 192.467 - External corrosion control: Electrical isolation.

Code of Federal Regulations, 2014 CFR

2014-10-01

... submerged pipeline must be electrically isolated from other underground metallic structures, unless the pipeline and the other structures are electrically interconnected and cathodically protected as a single... pipeline is necessary to facilitate the application of corrosion control. (c) Except for unprotected copper...

49 CFR 192.467 - External corrosion control: Electrical isolation.

Code of Federal Regulations, 2012 CFR

2012-10-01

... submerged pipeline must be electrically isolated from other underground metallic structures, unless the pipeline and the other structures are electrically interconnected and cathodically protected as a single... pipeline is necessary to facilitate the application of corrosion control. (c) Except for unprotected copper...

High-precision, large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices

PubMed Central

2011-01-01

Nanoscaled materials are attractive building blocks for hierarchical assembly of functional nanodevices, which exhibit diverse performances and simultaneous functions. We innovatively fabricated semiconductor nano-probes of tapered ZnS nanowires through melting and solidifying by electro-thermal process; and then, as-prepared nano-probes can manipulate nanomaterials including semiconductor/metal nanowires and nanoparticles through sufficiently electrostatic force to the desired location without structurally and functionally damage. With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices. Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property. This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication. PMID:21794151

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.

PubMed

Tan, Michael Loong Peng; Lentaris, Georgios; Amaratunga Aj, Gehan

2012-08-19

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

Thermo-mechanical properties and integrity of metallic interconnects in microelectronics

NASA Astrophysics Data System (ADS)

Ege, Efe Sinan

In this dissertation, combined numerical (Finite Element Method) and experimental efforts were undertaken to study thermo-mechanical behavior in microelectronic devices. Interconnects, including chip-level metallization and package-level solder joints, are used to join many of the circuit parts in modern equipment. The dissertation is structured into six independent studies after the introductory chapter. The first two studies focus on thermo-mechanical fatigue of solder joints. Thermo-mechanical fatigue, in the form of damage along a microstructurally coarsened region in tin-lead solder, is analyzed along with the effects of intermetallic morphology. Also, lap-shear testing is modeled to characterize the joint and to investigate the validity of experimental data from different solder and substrate geometries. In the third study, the effects of pre-machined holes on strain localization and overall ductility in bulk eutectic tin-lead alloy is examined. Finite element analyses, taking into account the viscoplastic response, were carried out to provide a mechanistic rationale to corroborate the experimental findings. The fourth study concerns chip-level copper interconnects. Various combinations of oxide and polymer-based low-k dielectric schemes, with and without the thin barrier layers surrounding the Cu line, are considered. Attention is devoted to the thermal stress and strain fields and their dependency on material properties, geometry, and modeling details. This study is followed by a chapter on atomistics of interface-mediated plasticity in thin metallic films. The objective is to gain fundamental insight into the underlying mechanisms affecting the mechanical response of nanoscale thin films. The final study investigates the effect of microstructural heterogeneity on indentation response, for the purpose of raising awareness of the uncertainties involved in applying indentation techniques in probing mechanical properties of miniaturized devices.

Statistical metrology—measurement and modeling of variation for advanced process development and design rule generation

NASA Astrophysics Data System (ADS)

Boning, Duane S.; Chung, James E.

1998-11-01

Advanced process technology will require more detailed understanding and tighter control of variation in devices and interconnects. The purpose of statistical metrology is to provide methods to measure and characterize variation, to model systematic and random components of that variation, and to understand the impact of variation on both yield and performance of advanced circuits. Of particular concern are spatial or pattern-dependencies within individual chips; such systematic variation within the chip can have a much larger impact on performance than wafer-level random variation. Statistical metrology methods will play an important role in the creation of design rules for advanced technologies. For example, a key issue in multilayer interconnect is the uniformity of interlevel dielectric (ILD) thickness within the chip. For the case of ILD thickness, we describe phases of statistical metrology development and application to understanding and modeling thickness variation arising from chemical-mechanical polishing (CMP). These phases include screening experiments including design of test structures and test masks to gather electrical or optical data, techniques for statistical decomposition and analysis of the data, and approaches to calibrating empirical and physical variation models. These models can be integrated with circuit CAD tools to evaluate different process integration or design rule strategies. One focus for the generation of interconnect design rules are guidelines for the use of "dummy fill" or "metal fill" to improve the uniformity of underlying metal density and thus improve the uniformity of oxide thickness within the die. Trade-offs that can be evaluated via statistical metrology include the improvements to uniformity possible versus the effect of increased capacitance due to additional metal.

Investigations on effects of the hole size to fix electrodes and interconnection lines in polydimethylsiloxane

NASA Astrophysics Data System (ADS)

Behkami, Saber; Frounchi, Javad; Ghaderi Pakdel, Firouz; Stieglitz, Thomas

2017-11-01

Translational research in bioelectronics medicine and neural implants often relies on established material assemblies made of silicone rubber (polydimethylsiloxane-PDMS) and precious metals. Longevity of the compound is of utmost importance for implantable devices in therapeutic and rehabilitation applications. Therefore, secure mechanical fixation can be used in addition to chemical bonding mechanisms to interlock PDMS substrate and insulation layers with metal sheets for interconnection lines and electrodes. One of the best ways to fix metal lines and electrodes in PDMS is to design holes in electrode rims to allow for direct interconnection between top to bottom layer silicone. Hence, the best layouts and sizes of holes (up to 6) which provide sufficient stability against lateral and vertical forces have been investigated with a variety of numbers of hole in line electrodes, which are simulated and fabricated with different layouts, sizes and materials. Best stability was obtained with radii of 100, 72 and 62 µm, respectively, and a single central hole in aluminum, platinum and MP35N foil line electrodes of 400  ×  500 µm2 size and of thickness 20 µm. The study showed that the best hole size which provides line electrode immobility (of thickness less than 30 µm) within a central hole is proportional to reverse value of Young’s Modulus of the material used. Thus, an array of line electrodes was designed and fabricated to study this effect. Experimental results were compared with simulation data. Subsequently, an approximation curve was generated as design rule to propose the best radius to fix line electrodes according to the material thickness between 10 and 200 µm using PDMS as substrate material.

Emerging Applications of Liquid Metals Featuring Surface Oxides

PubMed Central

2014-01-01

Gallium and several of its alloys are liquid metals at or near room temperature. Gallium has low toxicity, essentially no vapor pressure, and a low viscosity. Despite these desirable properties, applications calling for liquid metal often use toxic mercury because gallium forms a thin oxide layer on its surface. The oxide interferes with electrochemical measurements, alters the physicochemical properties of the surface, and changes the fluid dynamic behavior of the metal in a way that has, until recently, been considered a nuisance. Here, we show that this solid oxide “skin” enables many new applications for liquid metals including soft electrodes and sensors, functional microcomponents for microfluidic devices, self-healing circuits, shape-reconfigurable conductors, and stretchable antennas, wires, and interconnects. PMID:25283244

Syntheses, crystal structures, and properties of six new lanthanide(III) transition metal tellurium(IV) oxyhalides with three types of structures.

PubMed

Shen, Yue-Ling; Mao, Jiang-Gao

2005-07-25

Solid-state reactions of lanthanide(III) oxide (and lanthanide(III) oxyhalide), transition metal halide (and transition metal oxide), and TeO(2) at high temperature lead to six new lanthanide transition metal tellurium(IV) oxyhalides with three different types of structures, namely, DyCuTe(2)O(6)Cl, ErCuTe(2)O(6)Cl, ErCuTe(2)O(6)Br, Sm(2)Mn(Te(5)O(13))Cl(2), Dy(2)Cu(Te(5)O(13))Br(2), and Nd(4)Cu(TeO(3))(5)Cl(3). Compounds DyCuTe(2)O(6)Cl, ErCuTe(2)O(6)Cl, and ErCuTe(2)O(6)Br are isostructural. The lanthanide(III) ion is eight-coordinated by eight oxygen atoms, and the copper(II) ion is five-coordinated by four oxygens and a halide anion in a distorted square pyramidal geometry. The interconnection of Ln(III) and Cu(II) ions by bridging tellurite anions results in a three-dimensional (3D) network with tunnels along the a-axis; the halide anion and the lone-pair electrons of the tellurium(IV) ions are oriented toward the cavities of the tunnels. Compounds Sm(2)Mn(Te(5)O(13))Cl(2) and Dy(2)Cu(Te(5)O(13))Br(2) are isostructural. The lanthanide(III) ions are eight-coordinated by eight oxygens, and the divalent transition metal ion is octahedrally coordinated by six oxygens. Two types of polymeric tellurium(IV) oxide anions are formed: Te(3)O(8)(4)(-) and Te(4)O(10)(4)(-). The interconnection of the lanthanide(III) and divalent transition metal ions by the above two types of polymeric tellurium(IV) oxide anions leads to a 3D network with long, narrow-shaped tunnels along the b-axis. The halide anions remain isolated and are located at the above tunnels. Nd(4)Cu(TeO(3))(5)Cl(3) features a different structure. All five of the Nd(III) ions are eight-coordinated (NdO(8) for Nd(1), Nd(2), Nd(4), and Nd(5) and NdO(7)Cl for Nd(3)), and the copper(I) ion is tetrahedrally coordinated by four chloride anions. The interconnection of Nd(III) ions by bridging tellurite anions resulted in a 3D network with large tunnels along the b-axis. The CuCl(4) tetrahedra are interconnected into a 1D two-unit repeating (zweier) chain via corner-sharing. These 1D copper(I) chloride chains are inserted into the tunnels of the neodymium(III) tellurite via Nd-Cl-Cu bridges. Luminescent studies show that ErCuTe(2)O(6)Cl and Nd(4)Cu(TeO(3))(5)Cl(3) exhibit strong luminescence in the near-IR region. Magnetic measurements indicate the antiferromagnetic interactions between magnetic centers in these compounds.

Support grid for fuel elements in a nuclear reactor

DOEpatents

Finch, Lester M.

1977-01-01

A support grid is provided for holding nuclear fuel rods in a rectangular array. Intersecting sheet metal strips are interconnected using opposing slots in the strips to form a rectangular cellular grid structure for engaging the sides of a multiplicity of fuel rods. Spring and dimple supports for engaging fuel and guide rods extending through each cell in the support grid are formed in the metal strips with the springs thus formed being characterized by nonlinear spring rates.

Tubular screen electrical connection support for solid oxide fuel cells

DOEpatents

Tomlins, Gregory W.; Jaszcar, Michael P.

2002-01-01

A solid oxide fuel assembly is made of fuel cells (16, 16', 18, 24, 24', 26), each having an outer interconnection layer (36) and an outer electrode (28), which are disposed next to each other with rolled, porous, hollow, electrically conducting metal mesh conductors (20, 20') between the fuel cells, connecting the fuel cells at least in series along columns (15, 15') and where there are no metal felt connections between any fuel cells.

Reliability Improvement By Adopting Ti-barrier Metal For Porous Low-k ILD Structure

NASA Astrophysics Data System (ADS)

Sakata, A.; Yamashita, S.; Omoto, S.; Hatano, M.; Wada, J.; Higashi, K.; Yamaguchi, H.; Yosho, T.; Imamizu, K.; Yamada, M.; Hasunuma, M.; Takahashi, S.; Yamada, A.; Hasegawa, T.; Motoyama, K.; Tagami, M.; Kitano, T.; Kaneko, H.

2007-10-01

Titanium (Ti) has been proposed as an excellent barrier metal (BM) material for ULSI's Cu metallization from the stand point of two characteristics. One is the oxidation property, especially for the porous low-k ILD materials for 45 nm node device; the other is the interface behavior of Ti with Cu. Both stress induced voiding (SIV) suppression and one order longer electromigration (EM) lifetime were obtained by the adoption of Ti-BM instead of the conventional Tantalum (Ta)-BM. SIV failure is accelerated in porous low-k ILD by the following steps; 1) BM oxidation by the absorbed moisture in porous low-k ILD, 2) Adhesion degradation caused by the BM oxidation results in micro delamination of Cu film (void nucleation), 3) Void growth induced by the stress gradient in the Cu interconnect. It has been considered that the small volume change of Ti oxidation and the existence of metallic Ti-O solid-solution phase would be the reason for control of moisture penetration from the low-k ILD materials. In addition, Ti/Cu intermetallic reaction and the segregation of Ti atoms at Cu grain boundaries suppress Cu migration at BM/Cu interface and Cu grain boundaries, respectively. This is supported by higher EM activation energy of Cu line with Ti-BM than that with Ta-BM. These phenomena contribute to higher interconnect reliability.

Carbon nanotube based hybrid nanostructures: Synthesis and applications

NASA Astrophysics Data System (ADS)

Ou, Fung Suong

Hybrid nanostructures are fascinating materials for their promising applications in future nanoelectronics, electrical interconnects and energy storage devices. Practical ways of connecting individual carbon nanotubes to metal contacts for their use as interconnects and in electronic devices have been challenging. In this thesis, carbon nanotube based hybrids that combine the best properties of carbon nanotubes and metal nanowires have been fabricated. The electrical properties and Raman spectra of the hybrid nanowires are also studied. This thesis will focus on our recent results in the development of carbon nanotube hybrids for various applications. Various hybrid structures of multiwalled carbon nanotubes and metal nanowires can be fabricated using a combination of electrodeposition and chemical vapor deposition techniques. Controlled fabrication of multi-segmented structures will be studied. Several novel applications of these structures, for example, as electrodes in ultra-high power supercapacitors, multi-functional smart materials are also studied. The thesis will also highlight the development of carbon nanotube hybrids based smart materials. Hybrid nanowires with hydrophobic carbon nanotube tails and hydrophilic metal nanowire heads, allows for the assembly of spheres in solution. The design and manipulation of these carbon nanotube hybrids based smart structures for various novel applications will be discussed. Such new class of carbon nanotube hybrids surfactants are likely to lead as new tools in various fields such as microfluidics or water purification. In addition, we will also look at other variations of hybrid nanostructures fabricated from our method.

Nanoantenna couplers for metal-insulator-metal waveguide interconnects

NASA Astrophysics Data System (ADS)

Onbasli, M. Cengiz; Okyay, Ali K.

2010-08-01

State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times.

Long term high temperature oxidation characteristics of La and Cu alloyed ferritic stainless steels for solid oxide fuel cell interconnects

NASA Astrophysics Data System (ADS)

Swaminathan, Srinivasan; Lee, Young-Su; Kim, Dong-Ik

2016-09-01

To ensure the best performance of solid oxide fuel cell metallic interconnects, the Fe-22 wt.% Cr ferritic stainless steels with various La contents (0.006-0.6 wt.%) and Cu addition (1.57 wt.%), are developed. Long-term isothermal oxidation behavior of these steels is investigated in air at 800 °C, for 2700 h. Chemistry, morphology, and microstructure of the thermally grown oxide scale are examined using XPS, SEM-EDX, and XRD techniques. Broadly, all the steels show a double layer consisting of an inner Cr2O3 and outer (Mn, Cr)3O4. Distinctly, in the La-added steels, binary oxides of Cr, Mn and Ti are found at the oxide scale surface together with (Mn, Cr)3O4. Furthermore, all La-varied steels possess the metallic Fe protrusions along with discontinuous (Mn, Cr)3O4 spinel zones at the oxide scale/metal interface and isolated precipitates of Ti-oxides in the underlying matrix. Increase of La content to 0.6 wt.% is detrimental to the oxidation resistance. For the Cu-added steel, Cu is found to segregate strongly at the oxide scale/metal interface which inhibits the ingress of oxygen thereby suppressing the subscale formation of (Mn, Cr)3O4. Thus, Cu addition to the Fe-22Cr ferritic stainless steels benefits the oxidation resistance.

Theoretical study of nanophotonic directional couplers comprising near-field-coupled metal nanoparticles.

PubMed

Holmström, Petter; Yuan, Jun; Qiu, Min; Thylén, Lars; Bratkovsky, Alexander M

2011-04-11

The properties of integrated-photonics directional couplers composed of near-field-coupled arrays of metal nanoparticles are analyzed theoretically. It is found that it is possible to generate very compact, submicron length, high field-confinement and functionality devices with very low switch energies. The analysis is carried out for a hypothetical lossless silver to demonstrate the potential of this type of circuits for applications in telecom and interconnects. Employing losses of real silver, standalone devices with the above properties are still feasible in optimized metal nanoparticle structures. © 2011 Optical Society of America

Nanofibrous electrocatalysts

DOEpatents

Liu, Di Jia; Shui, Jianglan; Chen, Chen

2016-05-24

A nanofibrous catalyst and method of manufacture. A precursor solution of a transition metal based material is formed into a plurality of interconnected nanofibers by electro-spinning the precursor solution with the nanofibers converted to a catalytically active material by a heat treatment. Selected subsequent treatments can enhance catalytic activity.

Stretchable metal oxide thin film transistors on engineered substrate for electronic skin applications.

PubMed

Romeo, Alessia; Lacour, Stphanie P

2015-08-01

Electronic skins aim at providing distributed sensing and computation in a large-area and elastic membrane. Control and addressing of high-density soft sensors will be achieved when thin film transistor matrices are also integrated in the soft carrier substrate. Here, we report on the design, manufacturing and characterization of metal oxide thin film transistors on these stretchable substrates. The TFTs are integrated onto an engineered silicone substrate with embedded strain relief to protect the devices from catastrophic cracking. The TFT stack is composed of an amorphous In-Ga-Zn-O active layer, a hybrid AlxOy/Parylene dielectric film, gold electrodes and interconnects. All layers are prepared and patterned with planar, low temperature and dry processing. We demonstrate the interconnected IGZO TFTs sustain applied tensile strain up to 20% without electrical degradation and mechanical fracture. Active devices are critical for distributed sensing. The compatibility of IGZO TFTs with soft and biocompatible substrates is an encouraging step towards wearable electronic skins.

Preliminary results of sulfide melt/silicate wetting experiments in a partially melted ordinary chondrite

NASA Technical Reports Server (NTRS)

Jurewicz, Stephen R.; Jones, John H.

1994-01-01

Recently, mechanisms for core formation in planetary bodies have received considerable attention. Most current theories emphasize the need for large degrees of silicate partial melting to facilitate the coalescence and sinking of sulfide-metal liquid blebs through a low strength semi-crystalline silicate mush. This scenario is based upon observations that sulfide-metal liquid tends to form circular blebs in partially molten meteorites during laboratory experiments. However, recent experimental work by Herpfer and Larimer indicates that some sulfide-Fe liquids have wetting angles at and slightly below 60 deg in an olivine aggregate, implying an interconnected melt structure at any melt fraction. Such melt interconnectivity provides a means for gravitational compaction and extraction of the majority of a sulfide liquid phase in small planetary bodies without invoking large degrees of silicate partial melting. Because of the important ramifications of these results, we conducted a series of experiments using H-chondrite starting material in order to evaluate sulfide-liquid/silicate wetting behavior in a more complex natural system.

Electrical and thermal conduction in atomic layer deposition nanobridges down to 7 nm thickness.

PubMed

Yoneoka, Shingo; Lee, Jaeho; Liger, Matthieu; Yama, Gary; Kodama, Takashi; Gunji, Marika; Provine, J; Howe, Roger T; Goodson, Kenneth E; Kenny, Thomas W

2012-02-08

While the literature is rich with data for the electrical behavior of nanotransistors based on semiconductor nanowires and carbon nanotubes, few data are available for ultrascaled metal interconnects that will be demanded by these devices. Atomic layer deposition (ALD), which uses a sequence of self-limiting surface reactions to achieve high-quality nanolayers, provides an unique opportunity to study the limits of electrical and thermal conduction in metal interconnects. This work measures and interprets the electrical and thermal conductivities of free-standing platinum films of thickness 7.3, 9.8, and 12.1 nm in the temperature range from 50 to 320 K. Conductivity data for the 7.3 nm bridge are reduced by 77.8% (electrical) and 66.3% (thermal) compared to bulk values due to electron scattering at material and grain boundaries. The measurement results indicate that the contribution of phonon conduction is significant in the total thermal conductivity of the ALD films. © 2012 American Chemical Society

Monitoring concept for structural integration of PZT-fiber arrays in metal sheets: a numerical and experimental study

NASA Astrophysics Data System (ADS)

Drossel, Welf-Guntram; Schubert, Andreas; Putz, Matthias; Koriath, Hans-Joachim; Wittstock, Volker; Hensel, Sebastian; Pierer, Alexander; Müller, Benedikt; Schmidt, Marek

2018-01-01

The technique joining by forming allows the structural integration of piezoceramic fibers into locally microstructured metal sheets without any elastic interlayers. A high-volume production of the joining partners causes in statistical deviations from the nominal dimensions. A numerical simulation on geometric process sensitivity shows that the deviations have a high significant influence on the resulting fiber stresses after the joining by forming operation and demonstrate the necessity of a monitoring concept. On this basis, the electromechanical behavior of piezoceramic array transducers is investigated experimentally before, during and after the joining process. The piezoceramic array transducer consists of an arrangement of five electrical interconnected piezoceramic fibers. The findings show that the impedance spectrum depends on the fiber stresses and can be used for in-process monitoring during the joining process. Based on the impedance values the preload state of the interconnected piezoceramic fibers can be specifically controlled and a fiber overload.

Coaxial metal-silicide Ni2Si/C54-TiSi2 nanowires.

PubMed

Chen, Chih-Yen; Lin, Yu-Kai; Hsu, Chia-Wei; Wang, Chiu-Yen; Chueh, Yu-Lun; Chen, Lih-Juann; Lo, Shen-Chuan; Chou, Li-Jen

2012-05-09

One-dimensional metal silicide nanowires are excellent candidates for interconnect and contact materials in future integrated circuits devices. Novel core-shell Ni(2)Si/C54-TiSi(2) nanowires, 2 μm in length, were grown controllably via a solid-liquid-solid growth mechanism. Their interesting ferromagnetic behaviors and excellent electrical properties have been studied in detail. The coercivities (Hcs) of the core-shell Ni(2)Si/C54-TiSi(2) nanowires was determined to be 200 and 50 Oe at 4 and 300 K, respectively, and the resistivity was measured to be as low as 31 μΩ-cm. The shift of the hysteresis loop with the temperature in zero field cooled (ZFC) and field cooled (FC) studies was found. ZFC and FC curves converge near room temperature at 314 K. The favorable ferromagnetic and electrical properties indicate that the unique core-shell nanowires can be used in penetrative ferromagnetic devices at room temperature simultaneously as a future interconnection in integrated circuits.

Tailoring the Optical Properties of Silicon with Ion Beam Created Nanostructures for Advanced Photonics Applications

NASA Astrophysics Data System (ADS)

Akhter, Perveen

In today's fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption in thin film Si solar cells are of great importance and have been the focus of research for a few decades now. Another big issue of technology in this fast-paced world is the computing rate or data transfer rate between components of a chip in ultra-fast processors. Existing electronic interconnects suffering from the signal delays and heat generation issues are unable to handle high data rates. A possible solution to this problem is in replacing the electronic interconnects with optical interconnects which have large data carrying capacity. However, optical components are limited in size by the fundamental laws of diffraction to about half a wavelength of light and cannot be combined with nanoscale electronic components. Tremendous research efforts have been directed in search of an advanced technology which can bridge the size gap between electronic and photonic worlds. An emerging technology of "plasmonics'' which exploits the extraordinary optical properties of metal nanostructures to tailor the light at nanoscale has been considered a potential solution to both of the above-mentioned problems. Research conducted for this dissertation has an overall goal to investigate the optical properties of silicon with metal nanostructures for photovoltaics and advanced silicon photonics applications. The first part of the research focuses on achieving enhanced light trapping in poly-Si thin films using ion implantation induced surface texturing. In addition to surface texturing produced by H and Ar ion implantations, metal nanostructures are also added to the surface to further suppress light reflection at the plasmonic resonance of metal nanostructures. Remarkable suppression has been achieved resulting in reflection from the air/Si interface to below ˜5%. In the second part, optical properties of embedded metal nanostructures in silicon matrix gettered into the ion implantation created nanocavities are studied. Embedded nanostructures can have a huge impact in future photonics applications by replacing the existing electronic and photonic components such as interconnects, waveguides, modulators and amplifiers with their plasmonic counterparts. This new method of encapsulating metal nanostructures in silicon is cost-effective and compatible with silicon fabrication technology. Spectroscopic ellipsometry is used to study the dielectric properties of silicon with embedded silver nanostructures. High absorption regions around 900 nm, corresponding to plasmonic absorption of Ag nanoparticles in Si, have been observed and compared to theoretical calculations and simulation results. The possibility of modifying the dielectric function of Si with metal nanostructures can lay the foundation for functional base structures for advanced applications in silicon photonics, photovoltaics and plasmonics.

Nonlinear optical properties of interconnected gold nanoparticles on silicon

NASA Astrophysics Data System (ADS)

Lesuffleur, Antoine; Gogol, Philippe; Beauvillain, Pierre; Guizal, B.; Van Labeke, D.; Georges, P.

2008-12-01

We report second harmonic generation (SHG) measurements in reflectivity from chains of gold nanoparticles interconnected with metallic bridges. We measured more than 30 times a SHG enhancement when a surface plasmon resonance was excited in the chains of nanoparticles, which was influenced by coupling due to the electrical connectivity of the bridges. This enhancement was confirmed by rigorous coupled wave method calculations and came from high localization of the electric field at the bridge. The introduction of 10% random defects into the chains of nanoparticles dropped the SHG by a factor of 2 and was shown to be very sensitive to the fundamental wavelength.

Note: cryogenic microstripline-on-Kapton microwave interconnects.

PubMed

Harris, A I; Sieth, M; Lau, J M; Church, S E; Samoska, L A; Cleary, K

2012-08-01

Simple broadband microwave interconnects are needed for increasing the size of focal plane heterodyne radiometer arrays. We have measured loss and crosstalk for arrays of microstrip transmission lines in flex circuit technology at 297 and 77 K, finding good performance to at least 20 GHz. The dielectric constant of Kapton substrates changes very little from 297 to 77 K, and the electrical loss drops. The small cross-sectional area of metal in a printed circuit structure yields overall thermal conductivities similar to stainless steel coaxial cable. Operationally, the main performance tradeoffs are between crosstalk and thermal conductivity. We tested a patterned ground plane to reduce heat flux.

Double interconnection fuel cell array

DOEpatents

Draper, Robert; Zymboly, Gregory E.

1993-01-01

A fuel cell array (10) is made, containing number of tubular, elongated fuel cells (12) which are placed next to each other in rows (A, B, C, D), where each cell contains inner electrodes (14) and outer electrodes (18 and 18'), with solid electrolyte (16 and 16') between the electrodes, where the electrolyte and outer electrode are discontinuous, having two portions, and providing at least two opposed discontinuities which contain at least two oppositely opposed interconnections (20 and 20') contacting the inner electrode (14), each cell (12) having only three metallic felt electrical connectors (22) which contact surrounding cells, where each row is electrically connected to the other.

Porous metal hydride composite and preparation and uses thereof

DOEpatents

Steyert, W.A.; Olsen, C.E.

1980-03-12

A composite formed from large pieces of aggregate formed from (1) metal hydride (or hydride-former) powder and (2) either metal powder or plastic powder or both is prepared. The composite has large macroscopic interconnected pores (much larger than the sizes of the powders which are used) and will have a very fast heat transfer rate and low windage loss. It will be useful, for example, in heat engines, hydrogen storage devices, and refrigerator components which depend for their utility upon both a fast rate of hydriding and dehydriding. Additionally, a method of preparing the composite and a method of increasing the rates of hydriding and dehydriding of metal hydrides are also given.

Porous metal hydride composite and preparation and uses thereof

DOEpatents

Steyert, William A.; Olsen, Clayton E.

1982-01-01

A composite formed from large pieces of aggregate formed from (1) metal hydride (or hydride-former) powder and (2) either metal powder or plastic powder or both is prepared. The composite has large macroscopic interconnected pores (much larger than the sizes of the powders which are used) and will have a very fast heat transfer rate and low windage loss. It will be useful, for example, in heat engines, hydrogen storage devices, and refrigerator components which depend for their utility upon both a fast rate of hydriding and dehydriding. Additionally, a method of preparing the composite and a method of increasing the rates of hydriding and dehydriding of metal hydrides are also given.

Performance of an MPI-only semiconductor device simulator on a quad socket/quad core InfiniBand platform.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shadid, John Nicolas; Lin, Paul Tinphone

2009-01-01

This preliminary study considers the scaling and performance of a finite element (FE) semiconductor device simulator on a capacity cluster with 272 compute nodes based on a homogeneous multicore node architecture utilizing 16 cores. The inter-node communication backbone for this Tri-Lab Linux Capacity Cluster (TLCC) machine is comprised of an InfiniBand interconnect. The nonuniform memory access (NUMA) nodes consist of 2.2 GHz quad socket/quad core AMD Opteron processors. The performance results for this study are obtained with a FE semiconductor device simulation code (Charon) that is based on a fully-coupled Newton-Krylov solver with domain decomposition and multilevel preconditioners. Scaling andmore » multicore performance results are presented for large-scale problems of 100+ million unknowns on up to 4096 cores. A parallel scaling comparison is also presented with the Cray XT3/4 Red Storm capability platform. The results indicate that an MPI-only programming model for utilizing the multicore nodes is reasonably efficient on all 16 cores per compute node. However, the results also indicated that the multilevel preconditioner, which is critical for large-scale capability type simulations, scales better on the Red Storm machine than the TLCC machine.« less

Classroom Peer Relationships and Behavioral Engagement in Elementary School: The Role of Social Network Equity

PubMed Central

Cappella, Elise; Kim, Ha Yeon; Neal, Jennifer W.; Jackson, Daisy R.

2014-01-01

Applying social capital and systems theories of social processes, we examine the role of the classroom peer context in the behavioral engagement of low-income students (N = 80) in urban elementary school classrooms (N = 22). Systematic child observations were conducted to assess behavioral engagement among second to fifth graders in the fall and spring of the same school year. Classroom observations, teacher and child questionnaires, and social network data were collected in the fall. Confirming prior research, results from multilevel models indicate that students with more behavioral difficulties or less academic motivation in the fall were less behaviorally engaged in the spring. Extending prior research, classrooms with more equitably distributed and interconnected social ties—social network equity—had more behaviorally engaged students in the spring, especially in classrooms with higher levels of observed organization (i.e., effective management of behavior, time, and attention). Moreover, social network equity attenuated the negative relation between student behavioral difficulties and behavioral engagement, suggesting that students with behavioral difficulties were less disengaged in classrooms with more equitably distributed and interconnected social ties. Findings illuminate the need to consider classroom peer contexts in future research and intervention focused on the behavioral engagement of students in urban elementary schools. PMID:24081319

Implantable liquid metal-based flexible neural microelectrode array and its application in recovering animal locomotion functions

NASA Astrophysics Data System (ADS)

Guo, Rui; Liu, Jing

2017-10-01

With significant advantages in rapidly restoring the nerve function, electrical stimulation of nervous tissue is a crucial treatment of peripheral nerve injuries leading to common movement disorder. However, the currently available stimulating electrodes generally based on rigid conductive materials would cause a potential mechanical mismatch with soft neural tissues which thus reduces long-term effects of electrical stimulation. Here, we proposed and fabricated a flexible neural microelectrode array system based on the liquid metal GaIn alloy (75.5% Ga and 24.5% In by weight) and via printing approach. Such an alloy with a unique low melting point (10.35 °C) owns excellent electrical conductivity and high compliance, which are beneficial to serve as implantable flexible neural electrodes. The flexible neural microelectrode array embeds four liquid metal electrodes and stretchable interconnects in a PDMS membrane (500 µm in thickness) that possess a lower elastic modulus (1.055 MPa), which is similar to neural tissues with elastic moduli in the 0.1-1.5 MPa range. The electrical experiments indicate that the liquid metal interconnects could sustain over 7000 mechanical stretch cycles with resistance approximately staying at 4 Ω. Over the conceptual experiments on animal sciatic nerve electrical stimulation, the dead bullfrog implanted with flexible neural microelectrode array could even rhythmically contract and move its lower limbs under the electrical stimulations from the implant. This demonstrates a highly efficient way for quickly recovering biological nerve functions. Further, the good biocompatibility of the liquid metal material was justified via a series of biological experiments. This liquid metal modality for neural stimulation is expected to play important roles as biologic electrodes to overcome the fundamental mismatch in mechanics between biological tissues and electronic devices in the coming time.

Individual Battery-Power Control for a Battery Energy Storage System Using a Modular Multilevel Cascade Converter

NASA Astrophysics Data System (ADS)

Yamagishi, Tsukasa; Maharjan, Laxman; Akagi, Hirofumi

This paper focuses on a battery energy storage system that can be installed in a 6.6-kV power distribution system. This system comprises a combination of a modular multilevel cascade converter based on single-star bridge-cells (MMCC-SSBC) and multiple battery modules. Each battery module is connected to the dc side of each bridge-cell, where the battery modules are galvanically isolated from each other. Three-phase multilevel line-to-line voltages with extremely low voltage steps on the ac side of the converter help in solving problems related to line harmonic currents and electromagnetic interference (EMI) issues. This paper proposes a control method that allows each bridge-cell to independently adjust the battery power flowing into or out of each battery module. A three-phase energy storage system using nine nickel-metal-hydride (NiMH) battery modules, each rated at 72V and 5.5Ah, is designed, constructed, and tested to verify the viability and effectiveness of the proposed control method.

ISITE: Automatic Circuit Synthesis for Double-Metal CMOS VLSI (Very Large Scale Integrated) Circuits

DTIC Science & Technology

1989-12-01

rows and columns should be minimized. There are two methodologies for achieving this objective, namely, logic minimization to I I I 15 I A B C D E T...type and N-type polysilicon (Figure 2.5( b )) and interconnecting the gates with metal at a later I processing step. The two layers of aluminum available...polysiliconI ...... .. ... .. .. . .. ... .. ... .. I N polysilicon Iii~~iiiiiiii~~iiiiii (a) ( b ) 3 Figure 2.5. Controlling the Threshold Voltage in

Compliant Interfacial Layers in Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Firdosy, Samad A. (Inventor); Li, Billy Chun-Yip (Inventor); Ravi, Vilupanur A. (Inventor); Fleurial, Jean-Pierre (Inventor); Caillat, Thierry (Inventor); Anjunyan, Harut (Inventor)

2017-01-01

A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.

Fabrication of porous matrix membrane (PMM) using metal-organic framework as green template for water treatment.

PubMed

Lee, Jian-Yuan; Tang, Chuyang Y; Huo, Fengwei

2014-01-17

Pressure-driven membranes with high porosity can potentially be fabricated by removing template, such as low water stability metal-organic frameworks (MOFs) or other nanoparticles, in polymeric matrix. We report on the use of benign MOFs as green template to enhance porosity and interconnectivity of the water treatment membranes. Significantly enhanced separation performance was observed which might be attributed to the mass transfer coefficient of the substrate layer increased in ultrafiltration (UF) application.

Electrical behavior of aluminosilicate glass-ceramic sealants and their interaction with metallic solid oxide fuel cell interconnects

NASA Astrophysics Data System (ADS)

Goel, Ashutosh; Tulyaganov, Dilshat U.; Kharton, Vladislav V.; Yaremchenko, Aleksey A.; Ferreira, José M. F.

A series of alkaline-earth aluminosilicate glass-ceramics (GCs) were appraised with respect to their suitability as sealants for solid oxide fuel cells (SOFCs). The parent composition with general formula Ca 0.9MgAl 0.1La 0.1Si 1.9O 6 was modified with Cr 2O 3 and BaO. The addition of BaO led to a substantial decrease in the total electrical conductivity of the GCs, thus improving their insulating properties. BaO-containing GCs exhibited higher coefficient of thermal expansion (CTE) in comparison to BaO-free GCs. An extensive segregation of oxides of Ti and Mn, components of the Crofer22 APU interconnect alloy, along with negligible formation of BaCrO 4 was observed at the interface between GC/interconnects diffusion couples. Thermal shock resistance and gas-tightness of GC sealants in contact with yttria-stabilized zirconia electrolyte (8YSZ) was evaluated in air and water. Good matching of CTE and strong, but not reactive, adhesion to the solid electrolyte and interconnect, in conjunction with a high level of electrical resistivity, are all advantageous for potential SOFC applications.

Stretchable interconnections for flexible electronic systems.

PubMed

Jianhui, Lin; Bing, Yan; Xiaoming, Wu; Tianling, Ren; Litian, Liu

2009-01-01

Sensors, actuators and integrated circuits (IC) can be encapsulated together on an elastic substrate, which makes a flexible electronic system. In this system, electrical interconnections that can sustain large and reversible stretching are in great need. This paper is devoted to the fabrication of highly stretchable metal interconnections. Transfer printing technology is utilized, which mainly involves the transfer of 100-nm-thick gold ribbons from silicon wafers to pre-stretched elastic substrates. After the elastic substrates relax from the pre-strain, the gold ribbons buckle and form wavy geometries. These wavy geometries change in shapes to accommodate the applied strain and can be reversely stretched without cracks or fractures occurring, which will greatly raise the stretchability of the gold ribbons. As an application example, some of these wavy ribbons can accommodate high levels of stretching (up to 100%) and bending (with curvature radius down to 1.20 mm). Moreover, the efficiency and reliability of the transfer, especially for slender ribbons, have been increased due to the improvement of the technology. All the characteristics above will permit making stretchable gold conductors as interconnections for flexible electronic systems such as implantable medical systems and smart clothes.

Thermoreflectance imaging of electromigration evolution in asymmetric aluminum constrictions

NASA Astrophysics Data System (ADS)

Tian, Hao; Ahn, Woojin; Maize, Kerry; Si, Mengwei; Ye, Peide; Alam, Muhammad Ashraful; Shakouri, Ali; Bermel, Peter

2018-01-01

Electromigration (EM) is a phenomenon whereby the flow of current in metal wires moves the underlying atoms, potentially inducing electronic interconnect failures. The continued decrease in commercial lithographically defined feature sizes means that EM presents an increasing risk to the reliability of modern electronics. To mitigate these risks, it is important to look for novel mechanisms to extend lifetime without forfeiting miniaturization. Typically, only the overall increase in the interconnect resistance and failure voltage are characterized. However, if the current flows non-uniformly, spatially resolving the resulting hot spots during electromigration aging experiments may provide better insights into the fundamental mechanisms of this process. In this study, we focus on aluminum interconnects containing asymmetric reservoir and void pairs with contact pads on each end. Such reservoirs are potential candidates for self-healing. Thermoreflectance imaging was used to detect hot spots in electrical interconnects at risk of failure as the voltage was gradually increased. It reveals differential heating with increasing voltage for each polarity. We find that while current flow going from a constriction to a reservoir causes a break at the void, the identical structure with the opposite polarity can sustain higher current (J = 21 × 106 A/cm2) and more localized joule heating and yet is more stable. Ultimately, a break takes place at the contact pad where the current flows from narrow interconnect to larger pads. In summary, thermoreflectance imaging with submicron spatial resolution provides valuable information about localized electromigration evolution and the potential role of reservoirs to create more robust interconnects.

Probabilistic Analysis of Hierarchical Cluster Protocols for Wireless Sensor Networks

NASA Astrophysics Data System (ADS)

Kaj, Ingemar

Wireless sensor networks are designed to extract data from the deployment environment and combine sensing, data processing and wireless communication to provide useful information for the network users. Hundreds or thousands of small embedded units, which operate under low-energy supply and with limited access to central network control, rely on interconnecting protocols to coordinate data aggregation and transmission. Energy efficiency is crucial and it has been proposed that cluster based and distributed architectures such as LEACH are particularly suitable. We analyse the random cluster hierarchy in this protocol and provide a solution for low-energy and limited-loss optimization. Moreover, we extend these results to a multi-level version of LEACH, where clusters of nodes again self-organize to form clusters of clusters, and so on.

Scaling single-wavelength optical interconnects to 180 Gb/s with PAM-M and pulse shaping

NASA Astrophysics Data System (ADS)

Dris, Stefanos; Bakopoulos, Paraskevas; Argyris, Nikolaos; Spatharakis, Christos; Avramopoulos, Hercules

2016-03-01

Faced with surging datacenter traffic demand, system designers are turning to multi-level optical modulation with direct detection as the means of reaching 100 Gb/s in a single optical lane; a further upgrade to 400 Gb/s is envisaged through wavelength-multiplexing of multiple 100 Gb/s strands. In terms of modulation formats, PAM-4 and PAM-8 are considered the front-runners, striking a good balance between bandwidth-efficiency and implementation complexity. In addition, the emergence of energy-efficient, high-speed CMOS digital-to-analog converters (DACs) opens up new possibilities: Spectral shaping through digital filtering will allow squeezing even more data through low-cost, low-bandwidth electro-optic components. In this work we demonstrate an optical interconnect based on an EAM that is driven directly with sub-volt electrical swing by a 65 GSa/s arbitrary waveform generator (AWG). Low-voltage drive is particularly attractive since it allows direct interfacing with the switch/server ASIC, eliminating the need for dedicated, power-hungry and expensive electrical drivers. Single-wavelength throughputs of 180 and 120 Gb/s are experimentally demonstrated with 60 Gbaud optical PAM-8 and PAM-4 respectively. Successful transmission over 1250 m SMF is achieved with direct-detection, using linear equalization via offline digital signal processing in order to overcome the strong bandwidth limitation of the overall link (~20 GHz). The suitability of Nyquist pulse shaping for optical interconnects is also investigated experimentally with PAM-4 and PAM-8, at a lower symbol rate of 40 Gbaud (limited by the sampling rate of the AWG). To the best of our knowledge, the rates achieved are the highest ever using optical PAM-M formats.

Metallic Properties of the Si(111) - 5 × 2 - Au Surface from Infrared Plasmon Polaritons and Ab Initio Theory.

PubMed

Hötzel, Fabian; Seino, Kaori; Huck, Christian; Skibbe, Olaf; Bechstedt, Friedhelm; Pucci, Annemarie

2015-06-10

The metal-atom chains on the Si(111) - 5 × 2 - Au surface represent an exceedingly interesting system for the understanding of one-dimensional electrical interconnects. While other metal-atom chain structures on silicon suffer from metal-to-insulator transitions, Si(111) - 5 × 2 - Au stays metallic at least down to 20 K as we have proven by the anisotropic absorption from localized plasmon polaritons in the infrared. A quantitative analysis of the infrared plasmonic signal done here for the first time yields valuable band structure information in agreement with the theoretically derived data. The experimental and theoretical results are consistently explained in the framework of the atomic geometry, electronic structure, and IR spectra of the recent Kwon-Kang model.

Metal current collect protected by oxide film

DOEpatents

Jacobson, Craig P.; Visco, Steven J.; DeJonghe, Lutgard C.

2004-05-25

Provided are low-cost, mechanically strong, highly electronically conductive current collects and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical devices having as current interconnects a ferritic steel felt or screen coated with a protective oxide film.

Probabilistic Multi-Scale, Multi-Level, Multi-Disciplinary Analysis and Optimization of Engine Structures

NASA Technical Reports Server (NTRS)

Chamis, Christos C.; Abumeri, Galib H.

2000-01-01

Aircraft engines are assemblies of dynamically interacting components. Engine updates to keep present aircraft flying safely and engines for new aircraft are progressively required to operate in more demanding technological and environmental requirements. Designs to effectively meet those requirements are necessarily collections of multi-scale, multi-level, multi-disciplinary analysis and optimization methods and probabilistic methods are necessary to quantify respective uncertainties. These types of methods are the only ones that can formally evaluate advanced composite designs which satisfy those progressively demanding requirements while assuring minimum cost, maximum reliability and maximum durability. Recent research activities at NASA Glenn Research Center have focused on developing multi-scale, multi-level, multidisciplinary analysis and optimization methods. Multi-scale refers to formal methods which describe complex material behavior metal or composite; multi-level refers to integration of participating disciplines to describe a structural response at the scale of interest; multidisciplinary refers to open-ended for various existing and yet to be developed discipline constructs required to formally predict/describe a structural response in engine operating environments. For example, these include but are not limited to: multi-factor models for material behavior, multi-scale composite mechanics, general purpose structural analysis, progressive structural fracture for evaluating durability and integrity, noise and acoustic fatigue, emission requirements, hot fluid mechanics, heat-transfer and probabilistic simulations. Many of these, as well as others, are encompassed in an integrated computer code identified as Engine Structures Technology Benefits Estimator (EST/BEST) or Multi-faceted/Engine Structures Optimization (MP/ESTOP). The discipline modules integrated in MP/ESTOP include: engine cycle (thermodynamics), engine weights, internal fluid mechanics, cost, mission and coupled structural/thermal, various composite property simulators and probabilistic methods to evaluate uncertainty effects (scatter ranges) in all the design parameters. The objective of the proposed paper is to briefly describe a multi-faceted design analysis and optimization capability for coupled multi-discipline engine structures optimization. Results are presented for engine and aircraft type metrics to illustrate the versatility of that capability. Results are also presented for reliability, noise and fatigue to illustrate its inclusiveness. For example, replacing metal rotors with composites reduces the engine weight by 20 percent, 15 percent noise reduction, and an order of magnitude improvement in reliability. Composite designs exist to increase fatigue life by at least two orders of magnitude compared to state-of-the-art metals.

Electromigration failures under bidirectional current stress

NASA Astrophysics Data System (ADS)

Tao, Jiang; Cheung, Nathan W.; Hu, Chenming

1998-01-01

Electromigration failure under DC stress has been studied for more than 30 years, and the methodologies for accelerated DC testing and design rules have been well established in the IC industry. However, the electromigration behavior and design rules under time-varying current stress are still unclear. In CMOS circuits, as many interconnects carry pulsed-DC (local VCC and VSS lines) and bidirectional AC current (clock and signal lines), it is essential to assess the reliability of metallization systems under these conditions. Failure mechanisms of different metallization systems (Al-Si, Al-Cu, Cu, TiN/Al-alloy/TiN, etc.) and different metallization structures (via, plug and interconnect) under AC current stress in a wide frequency range (from mHz to 500 MHz) has been study in this paper. Based on these experimental results, a damage healing model is developed, and electromigration design rules are proposed. It shows that in the circuit operating frequency range, the "design-rule current" is the time-average current. The pure AC component of the current only contributes to self-heating, while the average (DC component) current contributes to electromigration. To ensure longer thermal-migration lifetime under high frequency AC stress, an additional design rule is proposed to limit the temperature rise due to self-joule heating.

Laser Microchemistry : A Powerful Tool For VLSI

NASA Astrophysics Data System (ADS)

Tonneau, Didier; Guern, Yves; Pelous, Gerard

1989-01-01

Interconnection direct writing on ICs is possible by localized laser-assisted Chemical Vapor Deposition. Recently we have developed and marketed a new laser microchemistry tool particularly designed for VLSI prototypes rewiring. By dissociating Ni(CO)4 molecules, Ni lines can be written at speeds higher than 5 gm/s under laser induced temperature as low as 400°C. At the same temperature tungsten stripes can be driven from decomposition of WF6-H2 mixtures. However the tungsten deposition rate is about two orders of magnitude lower than the nickel growth rate in the same temperature conditions. The resistivities of the deposits are in both cases around 10 μΩ.cm. Silicon dioxide layers can be promoted from dissociation of a Si2H6-N20 mixture under surface temperature around 500°C. These metal and insulator deposition basic steps have been integrated in a complete metal bridging process suitable for the last interconnection level of a VLSI circuit. This process has been firstly estimated from a functional point of view, by electrical characterizations realized on test patterns entirely drawn by laser chemistry. At least, by measuring the time necessary to perform a metal bridge, the process has been evaluated from an economical point of view.

Chip-package nano-structured copper and nickel interconnections with metallic and polymeric bonding interfaces

NASA Astrophysics Data System (ADS)

Aggarwal, Ankur

With the semiconductor industry racing toward a historic transition, nano chips with less than 45 nm features demand I/Os in excess of 20,000 that support computing speed in terabits per second, with multi-core processors aggregately providing highest bandwidth at lowest power. On the other hand, emerging mixed signal systems are driving the need for 3D packaging with embedded active components and ultra-short interconnections. Decreasing I/O pitch together with low cost, high electrical performance and high reliability are the key technological challenges identified by the 2005 International Technology Roadmap for Semiconductors (ITRS). Being able to provide several fold increase in the chip-to-package vertical interconnect density is essential for garnering the true benefits of nanotechnology that will utilize nano-scale devices. Electrical interconnections are multi-functional materials that must also be able to withstand complex, sustained and cyclic thermo-mechanical loads. In addition, the materials must be environmentally-friendly, corrosion resistant, thermally stable over a long time, and resistant to electro-migration. A major challenge is also to develop economic processes that can be integrated into back end of the wafer foundry, i.e. with wafer level packaging. Device-to-system board interconnections are typically accomplished today with either wire bonding or solders. Both of these are incremental and run into either electrical or mechanical barriers as they are extended to higher density of interconnections. Downscaling traditional solder bump interconnect will not satisfy the thermo-mechanical reliability requirements at very fine pitches of the order of 30 microns and less. Alternate interconnection approaches such as compliant interconnects typically require lengthy connections and are therefore limited in terms of electrical properties, although expected to meet the mechanical requirements. A novel chip-package interconnection technology is developed to address the IC packaging requirements beyond the ITRS projections and to introduce innovative design and fabrication concepts that will further advance the performance of the chip, the package, and the system board. The nano-structured interconnect technology simultaneously packages all the ICs intact in wafer form with quantum jump in the number of interconnections with the lowest electrical parasitics. The intrinsic properties of nano materials also enable several orders of magnitude higher interconnect densities with the best mechanical properties for the highest reliability and yet provide higher current and heat transfer densities. Nano-structured interconnects provides the ability to assemble the packaged parts on the system board without the use of underfill materials and to enable advanced analog/digital testing, reliability testing, and burn-in at wafer level. This thesis investigates the electrical and mechanical performance of nanostructured interconnections through modeling and test vehicle fabrication. The analytical models evaluate the performance improvements over solder and compliant interconnections. Test vehicles with nano-interconnections were fabricated using low cost electro-deposition techniques and assembled with various bonding interfaces. Interconnections were fabricated at 200 micron pitch to compare with the existing solder joints and at 50 micron pitch to demonstrate fabrication processes at fine pitches. Experimental and modeling results show that the proposed nano-interconnections could enhance the reliability and potentially meet all the system performance requirements for the emerging micro/nano-systems.

Scattering properties of electromagnetic waves from metal object in the lower terahertz region

NASA Astrophysics Data System (ADS)

Chen, Gang; Dang, H. X.; Hu, T. Y.; Su, Xiang; Lv, R. C.; Li, Hao; Tan, X. M.; Cui, T. J.

2018-01-01

An efficient hybrid algorithm is proposed to analyze the electromagnetic scattering properties of metal objects in the lower terahertz (THz) frequency. The metal object can be viewed as perfectly electrical conducting object with a slightly rough surface in the lower THz region. Hence the THz scattered field from metal object can be divided into coherent and incoherent parts. The physical optics and truncated-wedge incremental-length diffraction coefficients methods are combined to compute the coherent part; while the small perturbation method is used for the incoherent part. With the MonteCarlo method, the radar cross section of the rough metal surface is computed by the multilevel fast multipole algorithm and the proposed hybrid algorithm, respectively. The numerical results show that the proposed algorithm has good accuracy to simulate the scattering properties rapidly in the lower THz region.

Carbon dioxide electrolysis with solid oxide electrolyte cells for oxygen recovery in life support systems

NASA Technical Reports Server (NTRS)

Isenberg, Arnold O.; Cusick, Robert J.

1988-01-01

The direct electrochemical reduction of carbon dioxide (CO2) is achieved without catalysts and at sufficiently high temperatures to avoid carbon formation. The tubular electrolysis cell consists of thin layers of anode, electrolyte, cathode and cell interconnection. The electrolyte is made from yttria-stabilized zirconia which is an oxygen ion conductor at elevated temperatures. Anode and cell interconnection materials are complex oxides and are electronic conductors. The cathode material is a composite metal-ceramic structure. Cell performance characteristics have been determined using varying feed gas compositions and degrees of electrochemical decomposition. Cell test data are used to project the performance of a three-person CO2-electrolysis breadboard system.

Structural analysis, electronic properties, and band gaps of a graphene nanoribbon: A new 2D materials

NASA Astrophysics Data System (ADS)

Dass, Devi

2018-03-01

Graphene nanoribbon (GNR), a new 2D carbon nanomaterial, has some unique features and special properties that offer a great potential for interconnect, nanoelectronic devices, optoelectronics, and nanophotonics. This paper reports the structural analysis, electronic properties, and band gaps of a GNR considering different chirality combinations obtained using the pz orbital tight binding model. In structural analysis, the analytical expressions for GNRs have been developed and verified using the simulation for the first time. It has been found that the total number of unit cells and carbon atoms within an overall unit cell and molecular structure of a GNR have been changed with the change in their chirality values which are similar to the values calculated using the developed analytical expressions thus validating both the simulation as well as analytical results. Further, the electronic band structures at different chirality values have been shown for the identification of metallic and semiconductor properties of a GNR. It has been concluded that all zigzag edge GNRs are metallic with very small band gaps range whereas all armchair GNRs show both the metallic and semiconductor nature with very small and high band gaps range. Again, the total number of subbands in each electronic band structure is equal to the total number of carbon atoms present in overall unit cell of the corresponding GNR. The semiconductors GNRs can be used as a channel material in field effect transistor suitable for advanced CMOS technology whereas the metallic GNRs could be used for interconnect.

Extraction of heavy metal (Ba, Sr) and high silica glass powder synthesis from waste CRT panel glasses by phase separation.

PubMed

Xing, Mingfei; Wang, Jingyu; Fu, Zegang; Zhang, Donghui; Wang, Yaping; Zhang, Zhiyuan

2018-04-05

In this study, a novel process for the extraction of heavy metal Ba and Sr from waste CRT panel glass and synchronous preparation of high silica glass powder was developed by glass phase separation. CRT panel glass was first remelted with B 2 O 3 under air atmosphere to produce alkali borosilicate glass. During the phase separation process, the glass separated into two interconnected phases which were B 2 O 3 -rich phase and SiO 2 -rich phase. Most of BaO, SrO and other metal oxides including Na 2 O, K 2 O, Al 2 O 3 and CaO were mainly concentrated in the B 2 O 3 -rich phase. The interconnected B 2 O 3 -rich phase can be completely leached out by 5mol/L HNO 3 at 90 ℃. The remaining SiO 2 -rich phase was porous glasses consisting almost entirely of silica. The maximum Ba and Sr removal rates were 98.84% and 99.38% and high silica glass powder (SiO 2 purity > 90 wt%) was obtained by setting the temperature, B 2 O 3 added amount and holding time at 1000-1100 ℃, 20-30% and 30 min, respectively. Thus this study developed an potential economical process for detoxification and reclamation of waste heavy metal glasses. Copyright © 2017 Elsevier B.V. All rights reserved.

Simulation of void formation in interconnect lines

NASA Astrophysics Data System (ADS)

Sheikholeslami, Alireza; Heitzinger, Clemens; Puchner, Helmut; Badrieh, Fuad; Selberherr, Siegfried

2003-04-01

The predictive simulation of the formation of voids in interconnect lines is important for improving capacitance and timing in current memory cells. The cells considered are used in wireless applications such as cell phones, pagers, radios, handheld games, and GPS systems. In backend processes for memory cells, ILD (interlayer dielectric) materials and processes result in void formation during gap fill. This approach lowers the overall k-value of a given metal layer and is economically advantageous. The effect of the voids on the overall capacitive load is tremendous. In order to simulate the shape and positions of the voids and thus the overall capacitance, the topography simulator ELSA (Enhanced Level Set Applications) has been developed which consists of three modules, a level set module, a radiosity module, and a surface reaction module. The deposition process considered is deposition of silicon nitride. Test structures of interconnect lines of memory cells were fabricated and several SEM images thereof were used to validate the corresponding simulations.

Conductive contact area estimation for carbon nanotube via interconnects using secondary-electron imaging

NASA Astrophysics Data System (ADS)

Abe, Yusuke; Suzuki, Makoto; Vyas, Anshul; Yang, Cary Y.

2018-01-01

A major challenge for carbon nanotube (CNT) to become a viable replacement of copper and tungsten in the next-generation on-chip via interconnects is the high contact resistance between CNT and metal electrodes. A first step in meeting this challenge is an accurate characterization of via contact resistance. In this paper, the scanning electron microscope (SEM) image contrast at low landing energy is employed to estimate the conductive CNT area inside vias. The total conductive CNT area inside each via is deduced using SEM image with 0.1 keV landing energy and a specified threshold brightness, yielding via resistance versus CNT area behavior, which correlates well with electrical nanoprobing measurements of via resistance. Monte Carlo simulation of secondary electron generation lends further support for our analysis and suggests that the residue covering the CNT does not affect the conduction across the contact for residue thickness below 1 nm. This imaging and analysis technique can add much value to CNT via interconnect contact characterization.

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

PubMed Central

2012-01-01

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency. PMID:22901374

Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohno, Takeo, E-mail: t-ohno@wpi-aimr.tohoku.ac.jp; Japan Science and Technology Agency; Samukawa, Seiji, E-mail: samukawa@ifs.tohoku.ac.jp

2015-04-27

Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 2–5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2 V and multilevel switching operation.

Chemical and Physical Approaches to the Modulation of the Electronic Structure, Conductivities and Optical Properties of SWNT Thin Films

NASA Astrophysics Data System (ADS)

Moser, Matthew Lee

Since their discovery two decades ago, single walled carbon nanotubes (SWNT) have created an expansion of scientific interest that continues to grow to this day. This is due to a good balance between presence of bandgap, chemical reactivity and electrical conductivity. By interconnection of the individual nanotubes or modulation of the SWNT's electronic states, electronic devices made with thin films can become candidates for next generation electronics in areas such as memory devices, spintronics, energy storage devices and optoelectronics. My thesis focuses on the modulation of the electronic structure, optical properties and transport characteristics of single walled carbon nanotube films and their application in electronic and optoelectronic devices. Individual SWNTs have exceptional electronic properties but are difficult to manipulate for use in electronic devices. Alternatively, devices utilize SWNTs in thin films. SWNT thin films, however, may lose some of the properties due to Schottky barriers and electron hoping between metal-nanotube junctions and individual nanotubes within the film, respectively. Until recently, there has been no known route to preserve both conjugation and electrical properties. Prior attempts using covalent chemical functionalization led to re-hybridization of sp2 carbon centers to sp3, which introduces defects into the material and results in a decrease of electron mobility. As was discovered in Haddon Research group, depositing Group VI transition metals via atomic vapor deposition into SWNT films results in formation of bis-hexahapto covalent bonds. This (eta6-SWNT) Metal (eta6-SWNT) type of bonding was found to interconnect the delocalized systems without inducing structural re-hybridization and results in a decrease of the thin films electrical resistance. Recently, with the assistance of electron beam deposition, we deposited atomic metal vapor of various lanthanide metals on the SWNT thin films with the idea that they would also form covalent interconnects between nanotube sidewalls. In the case of highly electropositive lanthanides, the possibility of hexahapto bonding combined with ionic character can be evaluated and theorized. We have reported the first use of lanthanides to enhance the conductivities of SWNT thin films and showed that these metals can not only form bis-hexahapto interconnects at the SWNT junctions but can also inject electrons into the conduction bands of the SWNTs, forming a new type of mixed covalent-ionic bonding in the SWNT network. By monitoring electrical resistance and taking spectroscopic measurements of the Near-Infrared region we are able to show the correlation between enhanced conductivity and suppression of the S 11 interband transition of semiconducting SWNTs. Potential applications of SWNT thin films as electrochromic windows require reversible modulation of the electronic structure. In order to fabricate SWNTs devices which allow for this behavior it is necessary to modulate the electronic structure by physical means such as the application of an electrical potential. We found that ionic solutions can assist with maintaining complete suppression of two Van Hove singularities in the Density of States of semiconducting SWNTs which results in optically transparent windows in the Near-Infrared region, similar to the effect seen with the incorporation of atomic lanthanide metals in thin films. We demonstrate this behavior to provide a route to nanotube based optoelectronic devices in which we use electric fields to reversibly dope the SWNT films and thereby achieve controllable modulation of optical properties of SWNT thin film.

Probabilistic immortality of Cu damascene interconnects

NASA Astrophysics Data System (ADS)

Hau-Riege, Stefan P.

2002-02-01

We have studied electromigration short-line effects in Cu damascene interconnects through experiments on lines of various lengths L, stressed at a variety of current densities j, and embedded in different dielectric materials. We observed two modes of resistance evolution: Either the resistance of the lines remains constant for the duration of the test, so that the lines are considered immortal, or the lines fail due to abrupt open-circuit failure. The resistance was not observed to gradually increase and then saturate, as commonly observed in Al-based interconnects, because the barrier is too thin and resistive to serve as a redundant current path should voiding occur. The critical stress for void nucleation was found to be smaller than 41 MPa, since voiding occurred even under the mildest test conditions of j=2 MA/cm2 and L=10.5 μm at 300 °C. A small fraction of short Cu lines failed even at low current densities, which deems necessary a concept of probabilistic immortality rather than deterministic immortality. Experiments and modeling suggest that the probability of immortality is described by (jL2/B), where B is the effective elastic modulus of the metallization scheme. By contrast, the immortality of Al-based interconnects with shunt layers is described by (jL) if no voids nucleate, and (jL/B) if voids do nucleate. Even though the phenomenology of short-line effects differs for Al- and Cu-based interconnects, the immortality of interconnects of either materials system can be explained by the phenomena of nucleation barriers for void formation and void-growth saturation. The differences are due solely to the absence of a shunt layer and the low critical stress for void nucleation in the case of Cu.

49 CFR 177.837 - Class 3 materials.

Code of Federal Regulations, 2014 CFR

2014-10-01

... through an open filling hole, one end of a bond wire shall be connected to the stationary system piping or... interconnected.) This connection must be made before any filling hole is opened, and must remain in place until after the last filling hole has been closed. Additional bond wires are not needed around All-Metal...

49 CFR 177.837 - Class 3 materials.

Code of Federal Regulations, 2012 CFR

2012-10-01

... through an open filling hole, one end of a bond wire shall be connected to the stationary system piping or... interconnected.) This connection must be made before any filling hole is opened, and must remain in place until after the last filling hole has been closed. Additional bond wires are not needed around All-Metal...

49 CFR 177.837 - Class 3 materials.

Code of Federal Regulations, 2013 CFR

2013-10-01

... through an open filling hole, one end of a bond wire shall be connected to the stationary system piping or... interconnected.) This connection must be made before any filling hole is opened, and must remain in place until after the last filling hole has been closed. Additional bond wires are not needed around All-Metal...

Structure that encapsulates lithium metal for high energy density battery anode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Yi; Yan, Kai; Chu, Steven

A battery includes 1) an anode, 2) a cathode, and 3) an electrolyte disposed between the anode and the cathode. The anode includes a current collector and an interfacial layer disposed over the current collector, and the interfacial layer includes an array of interconnected, protruding regions that define spaces.

Method for producing microporous metal bodies

DOEpatents

Danko, Joseph C.

1982-01-01

Tungsten is vapor-deposited by hydrogen reduction of tungsten hexafluoride (WF.sub.6) to produce a tungsten body having from 40 to 100 ppm fluorine. The tungsten is then heated under vacuum to produce grain boundary porosity for a sufficient period of time to allow the pores along the grain boundaries to become interconnected.

Solvent induced synthesis, structure and properties of coordination polymers based on 5-hydroxyisophthalic acid as linker and 1,10-phenanthroline as auxiliary ligand

NASA Astrophysics Data System (ADS)

Kariem, Mukaddus; Yawer, Mohd; Sheikh, Haq Nawaz

2015-11-01

Three new coordination polymers [Mn(hip)(phen) (H2O)]n (1), [Co(hip)(phen) (H2O)]n (2), and [Cd(hip) (phen) (H2O)]n (3) (H2hip=5-hydroxyisophthalic acid; phen=1,10-phenanthroline) have been synthesized by solvo-hydrothermal method using diethyl formamide-water (DEF-H2O) as solvent system. Single-crystal X-ray diffraction analysis reveals that all three coordination polymers 1, 2 and 3 crystallize in monoclinic space group P2/n. Metal ions are inter-connected by hydroxyisophthalate anions forming zig-zag 1D chain. 1D chains are further inter-connected by hydrogen bonding and π-π stacking interactions leading to 3D supramolecular architecture. Hydrogen-bonding and π-π stacking provide thermal stability to polymers. Compounds 1 and 2 are paramagnetic at room temperature and variable temperature magnetic moment measurements revealed weak ferromagnetic interactions between metal ions at low temperature. Compound 3 exhibits excellent photoluminescence with large Stokes shift.

The effect of the geometry and material properties of a carbon joint produced by electron beam induced deposition on the electrical resistance of a multiwalled carbon nanotube-to-metal contact interface

NASA Astrophysics Data System (ADS)

Rykaczewski, Konrad; Henry, Matthew R.; Kim, Song-Kil; Fedorov, Andrei G.; Kulkarni, Dhaval; Singamaneni, Srikanth; Tsukruk, Vladimir V.

2010-01-01

Multiwall carbon nanotubes (MWNTs) are promising candidates for yielding next generation electrical and electronic devices such as interconnects and tips for conductive force microscopy. One of the main challenges in MWNT implementation in such devices is the high contact resistance of the MWNT-metal electrode interface. Electron beam induced deposition (EBID) of an amorphous carbon interface has previously been demonstrated to simultaneously lower the electrical contact resistance and improve the mechanical characteristics of the MWNT-electrode connection. In this work, we investigate the influence of process parameters, such as the electron beam energy, current, geometry, and deposition time, on the EBID-made carbon joint geometry and electrical contact resistance. The influence of the composition of the deposited material on its resistivity is also investigated. The relative importance of each component of the contact resistance and the limiting factor of the overall electrical resistance of a MWNT-based interconnect is determined through a combination of a model analysis and comprehensive experiments.

Apparatus and method for electroforming high aspect ratio micro-parts

DOEpatents

Hachman, John T [Stockton, CA; Losey, Matthew W [Rancho Cucamonga, CA; McLean, Dorrance E [Manteca, CA

2009-11-27

A fixture is disclosed to more easily affix a workpiece in the proper orientation and spacing with sealed electrical interconnection within an electrochemical plating bath. The workpiece can be any planar metallic or non-metallic substrate such as a silicon wafer commonly used in LIGA or microsystem fabrication. The fixture described allows the workpiece to be submerged deep within an electrolytic cell, facing upwards, and allows easy transfer from one cell to another. The edges, backside, and electrical connections are sealed and protected from the electrolyte.

Two zeolite-type frameworks in one metal-organic framework with Zn24 @Zn104 cube-in-sodalite architecture.

PubMed

Bu, Fei; Lin, Qipu; Zhai, Quanguo; Wang, Le; Wu, Tao; Zheng, Shou-Tian; Bu, Xianhui; Feng, Pingyun

2012-08-20

Two in one: A metal-organic framework obtained from three different inorganic building blocks (tetrameric Zn(4) O, trimeric Zn(3) OH, and monomeric Zn) posseses a nested cage-in-cage and framework-in-framework architecture. 24 Zn(4) O tetramers and eight Zn monomers form a sodalite cage into which a cubic cage made from eight Zn(3) (OH) trimers is nestled. Eight monomeric Zn(2+) centers interconnect these two cages. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multi-scale reflection modulator-based optical interconnects

NASA Astrophysics Data System (ADS)

Nair, Rohit

This dissertation describes the design, analysis, and experimental validation of micro- and macro-optical components for implementing optical interconnects at multiple scales for varied applications. Three distance scales are explored: millimeter, centimeter, and meter-scales. At the millimeter-scale, we propose the use of optical interconnects at the intra-chip level. With the rapid scaling down of CMOS critical dimensions in accordance to Moore's law, the bandwidth requirements of global interconnects in microprocessors has exceeded the capabilities of metal links. These are the wires that connect the most remote parts of the chip and are disproportionately problematic in terms of chip area and power consumption. Consequently, in the mid-2000s, we saw a shift in the chip architecture: a move towards multicore designs. However, this only delays the inevitable communication bottleneck between cores. To satisfy this bandwidth, we propose to replace the global metal interconnects with optical interconnects. We propose to use the hybrid integration of silicon with GaAs/AlAs-based multiple quantum well devices as optical modulators and photodetectors along with polymeric waveguides to transport the light. We use grayscale lithography to fabricate curved facets into the waveguides to couple light into the modulators and photodetectors. Next, at the chip-to-chip level in high-performance multiprocessor computing systems, communication distances vary from a few centimeters to tens of centimeters. An optical design for coupling light from off-chip lasers to on-chip surface-normal modulators is proposed in order to implement chip-to-chip free-space optical interconnects. The method uses a dual-prism module constructed from prisms made of two different glasses. The various alignment tolerances of the proposed system are investigated and found to be well within pick-and-place accuracies. For the off-chip lasers, vertical cavity surface emitting lasers (VCSELs) are proposed. The rationale behind using on-chip modulators rather than VCSELs is to avoid VCSEL thermal loads on chip, and because of higher reliability of modulators than VCSELs. Particularly above 10Gbps, an empirical model developed shows the rapid decrease of VCSEL median time to failure vs. data rate. Thus the proposed interconnect scheme which utilizes continuous wave VCSELs that are externally modulated by on-chip multiple quantum well modulators is applicable for chip-to-chip optical interconnects at 20Gbps and higher line data rates. Finally, for applications such as remote telemetry, where the interrogation distances can vary from a few meters to tens or even hundreds of meters we demonstrate a modulated retroreflector that utilizes InGaAs/InAlAs-based large-area multiple quantum well modulators on all three faces of a retroreflector. The large-area devices, fabricated by metalorganic chemical vapor deposition, are characterized in terms of the yield and leakage currents. A yield higher than that achieved previously using devices fabricated by molecular beam epitaxy is observed. The retroreflector module is constructed using standard FR4 printed circuit boards, thereby simplifying the wiring issue. A high optical contrast ratio of 8.23dB is observed for a drive of 20V. A free-standing PCB retroreflector is explored and found to have insufficient angular tolerances (+/-0.5 degrees). We show that the angular errors in the corner-cube construction can be corrected for using off-the-shelf optical components as opposed to mounting the PCBs on a precision corner cube, as has been done previously.

Many faces of carbon

NASA Astrophysics Data System (ADS)

Wang, Qian; Zhang, Shunhong; Jena, Puru

2016-12-01

Due to the special electronic configuration, small atomic size, light mass, and flexible bonding features, carbon exhibits many different structural configurations with very different physical and chemical properties. Here we focus our discussion on three recent forms of carbon, namely, metallic carbon, magnetic carbon, and all-pentagon-based carbon. The metallic carbon can be used for metallic interconnects in future electronic circuits, nano devices and microprocessors while the magnetic carbon can have applications in spintronics. All-pentagon-based carbon nano-structure, penta-graphene, not only expands the family of carbon materials with a number of new features, but also provides the materials basis for the 2D packing of pentagons pursued by mathematicians for almost a century.

High resolution, low cost solar cell contact development

NASA Technical Reports Server (NTRS)

Mardesich, N.

1979-01-01

The experimental work demonstrating the feasibility of the MIDFILM process as a low cost means of applying solar cell collector metallization as reported. Cell efficiencies of above 14% (AMl, 28 C) were achieved with fritted silver metallization. Environmental tests suggest that the metallization is slightly humidity sensitive and degradation is observed on cells with high series resistance. The major yield loss in the fabrication of cells was due to discontinuous grid lines, resulting in high series resitance. Standard lead-tin solder plated interconnections do not appear compatible with the MIDFILM contact. Copper, nickel and molybdemun base powder were investigated as low cost metallization systems. The copper based powder degraded the cell response. The nickel and molybdenum base powders oxidized when sintered in the oxidizing atmosphere necessary to ash the photoresin.

The Pleasure Evoked by Sad Music Is Mediated by Feelings of Being Moved.

PubMed

Vuoskoski, Jonna K; Eerola, Tuomas

2017-01-01

Why do we enjoy listening to music that makes us sad? This question has puzzled music psychologists for decades, but the paradox of "pleasurable sadness" remains to be solved. Recent findings from a study investigating the enjoyment of sad films suggest that the positive relationship between felt sadness and enjoyment might be explained by feelings of being moved (Hanich et al., 2014). The aim of the present study was to investigate whether feelings of being moved also mediated the enjoyment of sad music. In Experiment 1, 308 participants listened to five sad music excerpts and rated their liking and felt emotions. A multilevel mediation analysis revealed that the initial positive relationship between liking and felt sadness ( r = 0.22) was fully mediated by feelings of being moved. Experiment 2 explored the interconnections of perceived sadness, beauty, and movingness in 27 short music excerpts that represented independently varying levels of sadness and beauty. Two multilevel mediation analyses were carried out to test competing hypotheses: (A) that movingness mediates the effect of perceived sadness on liking, or (B) that perceived beauty mediates the effect of sadness on liking. Stronger support was obtained for Hypothesis A. Our findings suggest that - similarly to the enjoyment of sad films - the aesthetic appreciation of sad music is mediated by being moved. We argue that felt sadness may contribute to the enjoyment of sad music by intensifying feelings of being moved.

Interconnects for intermediate temperature solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Huang, Wenhua

Presently, one of the principal goals of solid oxide fuel cells (SOFCs) research is to reduce the stack operating temperature to between 600 and 800°C. However, one of the principal technological barriers is the non-availability of a suitable material satisfying all of the stability requirements for the interconnect. In this work two approaches for intermediate temperature SOFC interconnects have been explored. The first approach comprises an interconnect consisting of a bi-layer structure, a p-type oxide (La0.96Sr0.08MnO 2.001/LSM) layer exposed to a cathodic environment, and an n-type oxide (Y0.08Sr0.88Ti0.95Al0.05O 3-delta/YSTA) layer exposed to anodic conditions. Theoretical analysis based on the bi-layer structure has established design criteria to implement this approach. The analysis shows that the interfacial oxygen partial pressure, which determines the interconnect stability, is independent of the electronic conductivities of both layers but dependent on the oxygen ion layer interconnects, the oxygen ion conductivities of LSM and YSTA were measured as a function of temperature and oxygen partial pressure. Based on the measured data, it has been determined that if the thickness of YSTA layer is around 0.1cm, the thickness of LSM layer should be around 0.6 mum in order to maintain the stability of LSM. In a second approach, a less expensive stainless steel interconnect has been studied. However, one of the major concerns associated with the use of metallic interconnects is the development of a semi-conducting or insulating oxide scale and chromium volatility during extended exposure to the SOFC operating environment. Dense and well adhered Mn-Cu spinet oxide coatings were successfully deposited on stainless steel by an electrophoretic deposition (EPD) technique. It was found that the Mn-Cu-O coating significantly reduced the oxidation rate of the stainless steel and the volatility of chromium. The area specific resistance (ASR) of coated Crofer 22 APU is expected to he around 1.2x10 -2Ocm2 after exposure to air at 800°C for 50000 hours. This demonstrates that Crofer 22 APU with CuMn1.8O 4 coating deposited by EPD is suitable for application as interconnects in intermediate temperature SOFCs.

Advanced On-Board Processor (AOP). [for future spacecraft applications

NASA Technical Reports Server (NTRS)

1973-01-01

Advanced On-board Processor the (AOP) uses large scale integration throughout and is the most advanced space qualified computer of its class in existence today. It was designed to satisfy most spacecraft requirements which are anticipated over the next several years. The AOP design utilizes custom metallized multigate arrays (CMMA) which have been designed specifically for this computer. This approach provides the most efficient use of circuits, reduces volume, weight, assembly costs and provides for a significant increase in reliability by the significant reduction in conventional circuit interconnections. The required 69 CMMA packages are assembled on a single multilayer printed circuit board which together with associated connectors constitutes the complete AOP. This approach also reduces conventional interconnections thus further reducing weight, volume and assembly costs.

Early stage of plastic deformation in thin films undergoing electromigration

NASA Astrophysics Data System (ADS)

Valek, B. C.; Tamura, N.; Spolenak, R.; Caldwell, W. A.; MacDowell, A. A.; Celestre, R. S.; Padmore, H. A.; Bravman, J. C.; Batterman, B. W.; Nix, W. D.; Patel, J. R.

2003-09-01

Electromigration occurs when a high current density drives atomic motion from the cathode to the anode end of a conductor, such as a metal interconnect line in an integrated circuit. While electromigration eventually causes macroscopic damage, in the form of voids and hillocks, the earliest stage of the process when the stress in individual micron-sized grains is still building up is largely unexplored. Using synchrotron-based x-ray microdiffraction during an in-situ electromigration experiment, we have discovered an early prefailure mode of plastic deformation involving preferential dislocation generation and motion and the formation of a subgrain structure within individual grains of a passivated Al (Cu) interconnect. This behavior occurs long before macroscopic damage (hillocks and voids) is observed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formedmore » with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.« less

Large area nanoscale metal meshes for use as transparent conductive layers.

PubMed

Jin, Yuanhao; Li, Qunqing; Chen, Mo; Li, Guanhong; Zhao, Yudan; Xiao, Xiaoyang; Wang, Jiaping; Jiang, Kaili; Fan, Shoushan

2015-10-21

We report on the experimental realization of using super-aligned carbon nanotubes (SACNTs) as etching masks for the fabrication of large area nanoscale metal meshes. This method can easily be extended to different metals on both rigid and flexible substrates. The as-fabricated metal meshes, including the ones made of gold, copper, and aluminum, are suitable for use as transparent conductive layers (TCLs). The metal meshes, which are similar to the SACNT networks in their dimensional features of tens of nanometers, exhibit compatible performance in terms of optical transmittance and sheet resistance. Moreover, because the metal meshes are fabricated as an integrated material, there is no junction resistance between the interconnected metal nanostructures, which markedly lowers their sheet resistance at high temperatures. The fabrication of such an effective etching mask involves a simple drawing process of the SACNT networks prepared and a common deposition process. This approach should be easy to extend to various research fields and has broad prospects in commercial applications.

Template-directed assembly of metal-chalcogenide nanocrystals into ordered mesoporous networks.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vamvasakis, Ioannis; Subrahmanyam, Kota S.; Kanatzidis, Mercouri G.

Although great progress in the synthesis of porous networks of metal and metal oxide nanoparticles with highly accessible pore surface and ordered mesoscale pores has been achieved, synthesis of assembled 3D mesostructures of metal-chalcogenide nanocrystals is still challenging. In this work we demonstrate that ordered mesoporous networks, which comprise well-defined interconnected metal sulfide nanocrystals, can be prepared through a polymer-templated oxidative polymerization process. The resulting self-assembled mesostructures that were obtained after solvent extraction of the polymer template impart the unique combination of light-emitting metal chalcogenide nanocrystals, three-dimensional open-pore structure, high surface area, and uniform pores. We show that the poremore » surface of these materials is active and accessible to incoming molecules, exhibiting high photocatalytic activity and stability, for instance, in oxidation of 1-phenylethanol into acetophenone. We demonstrate through appropriate selection of the synthetic components that this method is general to prepare ordered mesoporous materials from metal chalcogenide nanocrystals with various sizes and compositions.« less

49 CFR 195.575 - Which facilities must I electrically isolate and what inspections, tests, and safeguards are...

Code of Federal Regulations, 2013 CFR

2013-10-01

... reasonable to foresee fault currents or an unusual risk of lightning, you must protect the pipeline against... metallic structures, unless you electrically interconnect and cathodically protect the pipeline and the... isolation of a portion of a pipeline is necessary to facilitate the application of corrosion control. (c...

49 CFR 195.575 - Which facilities must I electrically isolate and what inspections, tests, and safeguards are...

Code of Federal Regulations, 2014 CFR

2014-10-01

... reasonable to foresee fault currents or an unusual risk of lightning, you must protect the pipeline against... metallic structures, unless you electrically interconnect and cathodically protect the pipeline and the... isolation of a portion of a pipeline is necessary to facilitate the application of corrosion control. (c...

49 CFR 195.575 - Which facilities must I electrically isolate and what inspections, tests, and safeguards are...

Code of Federal Regulations, 2012 CFR

2012-10-01

... reasonable to foresee fault currents or an unusual risk of lightning, you must protect the pipeline against... metallic structures, unless you electrically interconnect and cathodically protect the pipeline and the... isolation of a portion of a pipeline is necessary to facilitate the application of corrosion control. (c...

Decrease of contact resistance at the interface of carbon nanotube/electrode by nanowelding

NASA Astrophysics Data System (ADS)

Zhao, Bo; Wang, Yanfang; Zhang, Yafei

2017-03-01

Reliable interconnection between carbon nanotubes (CNTs) and external circuit is one of the prerequisite in CNT electronics. In this work, ultrasonic nanowelding was used to bond CNTs with metal electrodes. By exerting ultrasonic energy at the interface of CNT/electrode, a reliable joint with negligible contact resistance was obtained between CNTs and electrodes. The performance of welding is susceptible to the ultrasonic parameters such as ultrasonic power and clamping force, as well as the metal type. It is found that the metals with good ductility or low melting point are easier to achieve effective joints. Moreover, interfacial compounds are formed at the welded surface of metal Al and Fe, which is resulted from the interacting and chemical bonding of carbon and metal atoms. After nanowelding, the contact resistance between CNTs and electrode is decreased dramatically, and the two-terminal resistance of the sample approximates to the intrinsic resistance of the CNT itself.

Fabrication of a novel gigabit/second free-space optical interconnect - photodetector characterization and testing and system development

NASA Technical Reports Server (NTRS)

Savich, Gregory R.

2004-01-01

The time when computing power is limited by the copper wire inherent in the computer system and not the speed of the microprocessor is rapidly approaching. With constant advances in computer technology, many researchers believe that in only a few years, optical interconnects will begin to replace copper wires in your Central Processing Unit (CPU). On a more macroscopic scale, the telecommunications industry has already made the switch to optical data transmission as, to date, fiber optic technology is the only reasonable method of reliable, long range data transmission. Within the span of a decade, we will see optical technologies move from the macroscopic world of the telecommunications industry to the microscopic world of the computer chip. Already, the communications industry is marketing commercially available optical links to connect two personal computers, thereby eliminating the need for standard and comparatively slow wired and wireless Ethernet transfers and greatly increasing the distance the computers can be separated. As processing demands continue to increase, the realm of optical communications will continue to move closer to the microprocessor and quite possibly onto the microprocessor itself. A day may come when copper connections are used only to supply power, not transfer data. This summer s work marks some of the beginning stages of a 5 to 10 year, long-term research project to create and study a free-space, 1 Gigabit/sec optical interconnect. The research will result in a novel fabricated, chip-to-chip interconnect consisting of a Vertical Cavity Surface Emitting Laser (VCSEL) Diode linked through free space to a Metal- Semiconductor-Metal (MSM) Photodetector with the possible integration of microlenses for signal focusing and Micro-Electromechanical Systems (MEMS) devices for optical signal steering. The advantages, disadvantages, and practicality of incorporating flip-chip mounting technologies will also be addressed. My work began with the design and construction of a test setup for the experiment and then appropriate characterization of the test system. Specifically, I am involved in the characterization of a commercially available 1550nm wavelength, 5mW diode laser and a study of its modulation bandwidth. Commercially produced photodetectors as well as the incorporation of microwave technology, in the form of RF input and output, are used in the characterization procedure. The next stage involves the use of a probe station and network analyzer to characterize and test a series of photodetectors fabricated on a 2 inch, Indium Gallium Arsenide (InGaAs) wafer in the Branch s microlithography lab. Other project responsibilities include, but are not limited to the incorporation of a transimpedance amplifier to the photodetector circuit; a study of VCSEL technology; bit error rate analysis of an optical interconnect system; and analysis of free space divergence of the VCSEL, optical path length of the interconnect; and any other pertinent optical properties of the one gigabit per second interconnect for fabrication and testing.

Analyse de l'interface cuivre/Teflon AF1600 par spectroscopie des photoelectrons rayons x

NASA Astrophysics Data System (ADS)

Popovici, Dan

The speed of electrical signals through the microelectronic multilevel interconnects depends of the delay time R x C. In order to improve the transmission speed of future microdevices, the microelectronics industry requires the use of metals having lower resistivities and insulators having lower permittivities. Copper and fluoropolymers are interesting candidates for the replacement of the presently used Al/polyimide technology. This thesis presents an X-ray photoelectron spectroscopy (XPS) analysis of the Cu/Teflon AF1600 interface, in order to have a better understanding of those interfacial interactions leading to improved adhesion. Several deposition methods, such as evaporation, sputtering and laser-induced chemical deposition were analyzed and compared. X-ray photoelectron spectroscopy (XPS) was used as the primary characterization technique of the different surfaces and interfaces. In the case of evaporation and sputtering, the loss of fluorine and oxygen atoms leads to graphitization and the crosslinking of carbon chains. The extent of damage caused by copper deposition is higher for sputter deposition because of the higher energies of the incidents atoms. This energy (two orders of magnitude higher than the energy involved in the evaporation) is also responsible for the total reaction of Cu with F and C. For the physical depositions (sputtering and evaporation), an angle-resolved XPS diffusion study showed the copper distribution as a function of depth. (i) For sputter deposition, this distribution is uniform. (ii) In the case of evaporation, we computed the concentration profile using the inverse Laplace transform. Several samples, annealed at different temperatures, were used to calculate the diffusion coefficients for the Cu/Teflon AF1600 interface. The study of interactions at the interface between Teflon AF1600 and copper deposited by different metallization techniques permitted us to elucidate some aspects related to the chemistry and structure of the interface. The presence of the strong Cu-C bond may lead to an enhanced adhesion but a pretreatment (plasma RF, X-ray or excimer laser) is necessary to increase the surface concentration of reactive groups. (Abstract shortened by UMI.)

Pressure activated interconnection of micro transfer printed components

NASA Astrophysics Data System (ADS)

Prevatte, Carl; Guven, Ibrahim; Ghosal, Kanchan; Gomez, David; Moore, Tanya; Bonafede, Salvatore; Raymond, Brook; Trindade, António Jose; Fecioru, Alin; Kneeburg, David; Meitl, Matthew A.; Bower, Christopher A.

2016-05-01

Micro transfer printing and other forms of micro assembly deterministically produce heterogeneously integrated systems of miniaturized components on non-native substrates. Most micro assembled systems include electrical interconnections to the miniaturized components, typically accomplished by metal wires formed on the non-native substrate after the assembly operation. An alternative scheme establishing interconnections during the assembly operation is a cost-effective manufacturing method for producing heterogeneous microsystems, and facilitates the repair of integrated microsystems, such as displays, by ex post facto addition of components to correct defects after system-level tests. This letter describes pressure-concentrating conductor structures formed on silicon (1 0 0) wafers to establish connections to preexisting conductive traces on glass and plastic substrates during micro transfer printing with an elastomer stamp. The pressure concentrators penetrate a polymer layer to form the connection, and reflow of the polymer layer bonds the components securely to the target substrate. The experimental yield of series-connected test systems with >1000 electrical connections demonstrates the suitability of the process for manufacturing, and robustness of the test systems against exposure to thermal shock, damp heat, and mechanical flexure shows reliability of the resulting bonds.

Nanostructured CuS networks composed of interconnected nanoparticles for asymmetric supercapacitors.

PubMed

Fu, Wenbin; Han, Weihua; Zha, Heming; Mei, Junfeng; Li, Yunxia; Zhang, Zemin; Xie, Erqing

2016-09-21

Nanostructured metal sulfides with excellent electrochemical activity and electrical conductivity are particularly promising for applications in high-performance energy storage devices. Here, we report on the facile synthesis of nanostructured CuS networks composed of interconnected nanoparticles as novel battery-type materials for asymmetric supercapacitors. We find that the CuS networks exhibit a high specific capacity of 49.8 mA g(-1) at a current density of 1 A g(-1), good rate capability and cycle stability. The superior performance could be attributed to the interconnected nanoparticles of CuS networks, which can facilitate electrolyte diffusion and provide fast electron pathways. Furthermore, an aqueous asymmetric supercapacitor has been assembled by using the CuS networks as the positive electrode and activated carbon as the negative electrode. The assembled device can work at a high operating voltage of 1.6 V and show a maximum energy density of 17.7 W h kg(-1) at a power density of 504 W kg(-1). This study indicates that the CuS networks have great potential for supercapacitor applications.

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

PubMed Central

Vollebregt, Sten; Ishihara, Ryoichi

2015-01-01

We demonstrate a method for the low temperature growth (350 °C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-κ dielectrics and some flexible substrates. The process is compatible with standard semiconductor fabrication, and a method for the fabrication of electrical 4-point probe test structures for vertical interconnect test structures is presented. Using scanning electron microscopy the morphology of the CNT bundles is investigated, which demonstrates vertical alignment of the CNT and can be used to tune the CNT growth time. With Raman spectroscopy the crystallinity of the CNT is investigated. It was found that the CNT have many defects, due to the low growth temperature. The electrical current-voltage measurements of the test vertical interconnects displays a linear response, indicating good ohmic contact was achieved between the CNT bundle and the top and bottom metal electrodes. The obtained resistivities of the CNT bundle are among the average values in the literature, while a record-low CNT growth temperature was used. PMID:26709530

Influence of part orientation on the geometric accuracy in robot-based incremental sheet metal forming

NASA Astrophysics Data System (ADS)

Störkle, Denis Daniel; Seim, Patrick; Thyssen, Lars; Kuhlenkötter, Bernd

2016-10-01

This article describes new developments in an incremental, robot-based sheet metal forming process (`Roboforming') for the production of sheet metal components for small lot sizes and prototypes. The dieless kinematic-based generation of the shape is implemented by means of two industrial robots, which are interconnected to a cooperating robot system. Compared to other incremental sheet metal forming (ISF) machines, this system offers high geometrical form flexibility without the need of any part-dependent tools. The industrial application of ISF is still limited by certain constraints, e.g. the low geometrical accuracy. Responding to these constraints, the authors present the influence of the part orientation and the forming sequence on the geometric accuracy. Their influence is illustrated with the help of various experimental results shown and interpreted within this article.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talin, Albert Alec; Jones, Reese E.; Spataru, Dan Catalin

Metal organic frameworks (MOFs) are extended, nanoporous crystalline compounds consisting of metal ions interconnected by organic ligands. Their synthetic versatility suggest a disruptive class of opto - electronic materials with a high degree of electrical tunability and without the property - degrading disorder of organic conductors. In this project we determined the factors controlling charge and energy transport in MOFs and evaluated their potential for thermoelectric energy conversion. Two strategies for a chieving electronic conductivity in MOFs were explored: 1) using redox active 'guest' molecules introduced into the pores to dope the framework via charge - transfer coupling (Guest@MOF), 2)more » metal organic graphene analogs (MOGs) with dispersive band structur es arising from strong electronic overlap between the MOG metal ions and its coordinating linker groups. Inkjet deposition methods were developed to facilitate integration of the guest@MOF and MOG materials into practical devices.« less

Miniature electrical connector

DOEpatents

Casper, Robert F.

1976-01-01

A miniature coaxial cable electrical connector includes an annular compressible gasket in a receptacle member, the gasket having a generally triangular cross section resiliently engaging and encircling a conically tapered outer surface of a plug member to create an elongated current leakage path at their interface; means for preventing rotation of the plug relative to the receptacle; a metal sleeve forming a portion of the receptacle and encircling the plug member when interconnected; and a split ring in the plug having outwardly and rearwardly projecting fingers spaced from and encircling a portion of a coaxial cable and engageable with the metal sleeve to interlock the receptacle and plug.

Cosine-Gauss plasmon beam: a localized long-range nondiffracting surface wave.

PubMed

Lin, Jiao; Dellinger, Jean; Genevet, Patrice; Cluzel, Benoit; de Fornel, Frederique; Capasso, Federico

2012-08-31

A new surface wave is introduced, the cosine-Gauss beam, which does not diffract while it propagates in a straight line and tightly bound to the metallic surface for distances up to 80 μm. The generation of this highly localized wave is shown to be straightforward and highly controllable, with varying degrees of transverse confinement and directionality, by fabricating a plasmon launcher consisting of intersecting metallic gratings. Cosine-Gauss beams have potential for applications in plasmonics, notably for efficient coupling to nanophotonic devices, opening up new design possibilities for next-generation optical interconnects.

Method of forming and assembly of metal and ceramic parts

DOEpatents

Ripley, Edward B

2014-04-22

A method of forming and assembling at least two parts together that may be metal, ceramic, or a combination of metal and ceramic parts. Such parts may have different CTE. Individual parts that are formed and sintered from particles leave a network of interconnecting porosity in each sintered part. The separate parts are assembled together and then a fill material is infiltrated into the assembled parts using a method such as capillary action, gravity, and/or pressure. The assembly is then cured to yield a bonded and fully or near-fully dense part that has the desired physical and mechanical properties for the part's intended purpose. Structural strength may be added to the parts by the inclusion of fibrous materials.

Method of forming and assembly of metal parts and ceramic parts

DOEpatents

Ripley, Edward B [Knoxville, TN

2011-11-22

A method of forming and assembling at least two parts together that may be metal, ceramic, or a combination of metal and ceramic parts. Such parts may have different CTE. Individual parts that are formed and sintered from particles leave a network of interconnecting porosity in each sintered part. The separate parts are assembled together and then a fill material is infiltrated into the assembled parts using a method such as capillary action, gravity, and/or pressure. The assembly is then cured to yield a bonded and fully or near-fully dense part that has the desired physical and mechanical properties for the part's intended purpose. Structural strength may be added to the parts by the inclusion of fibrous materials.

Scanning tunneling spectroscopy study of the proximity effect in a disordered two-dimensional metal.

PubMed

Serrier-Garcia, L; Cuevas, J C; Cren, T; Brun, C; Cherkez, V; Debontridder, F; Fokin, D; Bergeret, F S; Roditchev, D

2013-04-12

The proximity effect between a superconductor and a highly diffusive two-dimensional metal is revealed in a scanning tunneling spectroscopy experiment. The in situ elaborated samples consist of superconducting single crystalline Pb islands interconnected by a nonsuperconducting atomically thin disordered Pb wetting layer. In the vicinity of each superconducting island the wetting layer acquires specific tunneling characteristics which reflect the interplay between the proximity-induced superconductivity and the inherent electron correlations of this ultimate diffusive two-dimensional metal. The observed spatial evolution of the tunneling spectra is accounted for theoretically by combining the Usadel equations with the theory of dynamical Coulomb blockade; the relevant length and energy scales are extracted and found in agreement with available experimental data.

32 x 16 CMOS smart pixel array for optical interconnects

NASA Astrophysics Data System (ADS)

Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

2000-05-01

Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

Graph Theory-Based Analysis of the Lymph Node Fibroblastic Reticular Cell Network.

PubMed

Novkovic, Mario; Onder, Lucas; Bocharov, Gennady; Ludewig, Burkhard

2017-01-01

Secondary lymphoid organs have developed segregated niches that are able to initiate and maintain effective immune responses. Such global organization requires tight control of diverse cellular components, specifically those that regulate lymphocyte trafficking. Fibroblastic reticular cells (FRCs) form a densely interconnected network in lymph nodes and provide key factors necessary for T cell migration and retention, and foster subsequent interactions between T cells and dendritic cells. Development of integrative systems biology approaches has made it possible to elucidate this multilevel complexity of the immune system. Here, we present a graph theory-based analysis of the FRC network in murine lymph nodes, where generation of the network topology is performed using high-resolution confocal microscopy and 3D reconstruction. This approach facilitates the analysis of physical cell-to-cell connectivity, and estimation of topological robustness and global behavior of the network when it is subjected to perturbation in silico.

Cu Pillar Low Temperature Bonding and Interconnection Technology of for 3D RF Microsystem

NASA Astrophysics Data System (ADS)

Shi, G. X.; Qian, K. Q.; Huang, M.; Yu, Y. W.; Zhu, J.

2018-03-01

In this paper 3D interconnects technologies used Cu pillars are discussed with respect to RF microsystem. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, RF microsystem used the heterogeneous chip such as GaAs integration with Si interposers should be at low temperature. The pillars were constituted by Cu (2 micron) -Ni (2 micron) -Cu (3 micron) -Sn (1 micron) multilayer metal and total height is 8 micron on the front-side of the wafer by using electroplating. The wafer backside Cu pillar is obtained by temporary bonding, thinning and silicon surface etching. The RF interposers are stacked by Cu-Sn eutectic bonding at 260 °C. Analyzed the reliability of different pillar bonding structure.

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

NASA Astrophysics Data System (ADS)

Yin, Lan; Bozler, Carl; Harburg, Daniel V.; Omenetto, Fiorenzo; Rogers, John A.

2015-01-01

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

L-connect routing of die surface pads to the die edge for stacking in a 3D array

DOEpatents

Petersen, Robert W.

2000-01-01

Integrated circuit chips and method of routing the interface pads from the face of the chip or die to one or more sidewall surfaces of the die. The interconnection is routed from the face of the die to one or more edges of the die, then routed over the edge of the die and onto the side surface. A new pad is then formed on the sidewall surface, which allows multiple die or chips to be stacked in a three-dimensional array, while enabling follow-on signal routing from the sidewall pads. The routing of the interconnects and formation of the sidewall pads can be carried out in an L-connect or L-shaped routing configuration, using a metalization process such as laser pantography.

State University of New York Institute of Technology (SUNYIT) Visiting Scholars Program

DTIC Science & Technology

2013-05-01

team members, and build the necessary backend metal interconnections. APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED 4 Baek-Young Choi...Cooperative and Opportunistic Mobile Cloud for Energy Efficient Positioning; Department of Computer Science Electrical Engineering, University of...Missouri - Kansas City The fast growing popularity of smartphones and tablets enables us the use of various intelligent mobile applications. As many of

Life prediction of coated and uncoated metallic interconnect for solid oxide fuel cell applications

NASA Astrophysics Data System (ADS)

Liu, W. N.; Sun, X.; Stephens, E.; Khaleel, M. A.

In this paper, we present an integrated experimental and modeling methodology in predicting the life of coated and uncoated metallic interconnect (IC) for solid oxide fuel cell (SOFC) applications. The ultimate goal is to provide cell designer and manufacture with a predictive methodology such that the life of the IC system can be managed and optimized through different coating thickness to meet the overall cell designed life. Crofer 22 APU is used as the example IC material system. The life of coated and uncoated Crofer 22 APU under isothermal cooling was predicted by comparing the predicted interfacial strength and the interfacial stresses induced by the cooling process from the operating temperature to room temperature, together with the measured oxide scale growth kinetics. It was found that the interfacial strength between the oxide scale and the Crofer 22 APU substrate decreases with the growth of the oxide scale, and that the interfacial strength for the oxide scale/spinel coating interface is much higher than that of the oxide scale/Crofer 22 APU substrate interface. As expected, the predicted life of the coated Crofer 22 APU is significantly longer than that of the uncoated Crofer 22 APU.

Oxide-confined 2D VCSEL arrays for high-density inter/intra-chip interconnects

NASA Astrophysics Data System (ADS)

King, Roger; Michalzik, Rainer; Jung, Christian; Grabherr, Martin; Eberhard, Franz; Jaeger, Roland; Schnitzer, Peter; Ebeling, Karl J.

1998-04-01

We have designed and fabricated 4 X 8 vertical-cavity surface-emitting laser (VCSEL) arrays intended to be used as transmitters in short-distance parallel optical interconnects. In order to meet the requirements of 2D, high-speed optical links, each of the 32 laser diodes is supplied with two individual top contacts. The metallization scheme allows flip-chip mounting of the array modules junction-side down on silicon complementary metal oxide semiconductor (CMOS) chips. The optical and electrical characteristics across the arrays with device pitch of 250 micrometers are quite homogeneous. Arrays with 3 micrometers , 6 micrometers and 10 micrometers active diameter lasers have been investigated. The small devices show threshold currents of 600 (mu) A, single-mode output powers as high as 3 mW and maximum wavelength deviations of only 3 nm. The driving characteristics of all arrays are fully compatible to advanced 3.3 V CMOS technology. Using these arrays, we have measured small-signal modulation bandwidths exceeding 10 GHz and transmitted pseudo random data at 8 Gbit/s channel over 500 m graded index multimode fiber. This corresponds to a data transmission rate of 256 Gbit/s per array of 1 X 2 mm2 footprint area.

Disorder-induced localization in crystalline phase-change materials.

PubMed

Siegrist, T; Jost, P; Volker, H; Woda, M; Merkelbach, P; Schlockermann, C; Wuttig, M

2011-03-01

Localization of charge carriers in crystalline solids has been the subject of numerous investigations over more than half a century. Materials that show a metal-insulator transition without a structural change are therefore of interest. Mechanisms leading to metal-insulator transition include electron correlation (Mott transition) or disorder (Anderson localization), but a clear distinction is difficult. Here we report on a metal-insulator transition on increasing annealing temperature for a group of crystalline phase-change materials, where the metal-insulator transition is due to strong disorder usually associated only with amorphous solids. With pronounced disorder but weak electron correlation, these phase-change materials form an unparalleled quantum state of matter. Their universal electronic behaviour seems to be at the origin of the remarkable reproducibility of the resistance switching that is crucial to their applications in non-volatile-memory devices. Controlling the degree of disorder in crystalline phase-change materials might enable multilevel resistance states in upcoming storage devices.

Stretchable electronics for wearable and high-current applications

NASA Astrophysics Data System (ADS)

Hilbich, Daniel; Shannon, Lesley; Gray, Bonnie L.

2016-04-01

Advances in the development of novel materials and fabrication processes are resulting in an increased number of flexible and stretchable electronics applications. This evolving technology enables new devices that are not readily fabricated using traditional silicon processes, and has the potential to transform many industries, including personalized healthcare, consumer electronics, and communication. Fabrication of stretchable devices is typically achieved through the use of stretchable polymer-based conductors, or more rigid conductors, such as metals, with patterned geometries that can accommodate stretching. Although the application space for stretchable electronics is extensive, the practicality of these devices can be severely limited by power consumption and cost. Moreover, strict process flows can impede innovation that would otherwise enable new applications. In an effort to overcome these impediments, we present two modified approaches and applications based on a newly developed process for stretchable and flexible electronics fabrication. This includes the development of a metallization pattern stamping process allowing for 1) stretchable interconnects to be directly integrated with stretchable/wearable fabrics, and 2) a process variation enabling aligned multi-layer devices with integrated ferromagnetic nanocomposite polymer components enabling a fully-flexible electromagnetic microactuator for large-magnitude magnetic field generation. The wearable interconnects are measured, showing high conductivity, and can accommodate over 20% strain before experiencing conductive failure. The electromagnetic actuators have been fabricated and initial measurements show well-aligned, highly conductive, isolated metal layers. These two applications demonstrate the versatility of the newly developed process and suggest potential for its furthered use in stretchable electronics and MEMS applications.

Deformation of a crystalline olivine aggregate containing two immiscible liquids: Implications for early core-mantle differentiation

NASA Astrophysics Data System (ADS)

Cerantola, V.; Walte, N. P.; Rubie, D. C.

2015-05-01

Deformation-assisted segregation of metallic and sulphidic liquid from a solid peridotitic matrix is a process that may contribute to the early differentiation of small planetesimals into a metallic core and a silicate mantle. Here we present results of an experimental study using a simplified system consisting of a polycrystalline Fo90-olivine matrix containing a small percentage of iron sulphide and a synthetic primitive MORB melt, in order to investigate whether the silicate melt enhances the interconnection and segregation of FeS liquid under deformation conditions at varying strain rates. The experiments have been performed at 2 GPa, 1450 °C and strain rates between 1 ×10-3s-1 to 1 ×10-5s-1. Our results show that the presence of silicate melt actually hinders the migration and segregation of sulphide liquid by reducing its interconnectivity. At low to moderate strain rates the sulphide liquid pockets preserved a roundish shape, showing the liquid behavior is governed mainly by surface tension rather than by differential stress. Even at the highest strain rates, insignificant FeS segregation and interconnection were observed. On the other hand the basaltic melt was very mobile during deformation, accommodating part of the strain, which led to its segregation from the matrix at high bulk strains leaving the sulphide liquid stranded in the olivine matrix. Hence, we conclude that deformation-induced percolation of sulphide liquid does not contribute to the formation of planetary cores after the silicate solidus is overstepped. A possible early deformation enhanced core-mantle differentiation after overstepping the Fe-S solidus is not possible between the initial formation of silicate melt and the formation of a widespread magma ocean.

LaNi0.6Co0 4O3-δ dip-coated on Fe-Cr mesh as a composite cathode contact material on intermediate solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Morán-Ruiz, Aroa; Vidal, Karmele; Larrañaga, Aitor; Laguna-Bercero, Miguel Angel; Porras-Vázquez, Jose Manuel; Slater, Peter Raymond; Arriortua, María Isabel

2014-12-01

The feasibility of using Crofer22APU mesh dip coated with LaNi0.6Co0.4O3-δ (LNC) ceramic paste as a uniform contact layer on a Crofer22APU channeled interconnect was studied. The control of LNC dip coating thickness on Fe-Cr mesh was carried out by rheological measurements of the suspension. SEM cross-section of formed composite contact material showed good adherence between ceramic and metallic components. The measured area specific resistance (ASR) value at 800 °C was 0.46 ± 0.01 mΩ cm2, indicating low contact resistance itself. The long term stability of metallic/ceramic composite was also studied. The contact resistance, when composite contact material was adhered to channeled Crofer22APU interconnect, was 5.40 ± 0.01 mΩ cm2, which is a suitable value for the performance of IT-SOFC stack. The stability of the system after treating at 800 °C for 1000 h was characterized using X-ray Micro-Diffraction (XRMD), Scanning Electron Microscope equipped with an Energy Dispersive X-ray analyzer (SEM-EDX) and X-ray Photoelectron Spectroscopy (XPS) techniques. The oxidation rate of the alloy and Fe3O4 phase formation were enhanced on the channels of the interconnect. Thus, the formation of CrO3 (g) and CrO2(OH)2 (g) species was accelerated on the composite surface under the channel. Through XRMD and XPS analysis the coexistence of two perovskite phases (initial LNC and Cr-perovskite) was observed.

The Influence of Impurities and Metallic Capping Layers on the Microstructure of Copper Interconnects

NASA Astrophysics Data System (ADS)

Rizzolo, Michael

As copper interconnects have scaled to ever smaller dimensions on semiconductor devices, the microstructure has become increasingly detrimental for performance and reliability. Small grains persist in interconnects despite annealing at high temperatures, leading to higher line resistance and more frequent electromigration-induced failures. Conventionally, it was believed that impurities from the electrodeposition pinned grain growth, but limitations in analytical techniques meant the effect was inferred rather than observed. Recent advances in analytical techniques, however, have enabled this work to quantify impurity content, location, and diffusion in relation to microstructural changes in electroplated copper. Surface segregation of impurities during the initial burst of grain growth was investigated. After no surface segregation was observed, a microfluidic plating cell was constructed to plate multilayer films with regions of intentionally high and low impurity concentrations to determine if grain growth could be pinned by the presence of impurities; it was not. An alternate mechanism for grain boundary pinning based on the texture of the seed layer is proposed, supported by time-resolved transmission electron microscopy and transmission electron backscatter diffraction data. The suggested model posits that the seed in narrow features has no preferred orientation, which results in rapid nucleation of subsurface grains in trench regions prior to recrystallization from the overburden down. These rapidly growing grains are able to block off several trenches from the larger overburden grains, inhibiting grain growth in narrow features. With this knowledge in hand, metallic capping layers were employed to address the problematic microstructure in 70nm lines. The capping layers (chromium, nickel, zinc, and tin) were plated on the copper overburden prior to annealing to manipulate the stress gradient and microstructural development during annealing. It appeared that regardless of as-plated stress, nickel capping altered the recrystallized texture of the copper over patterned features. The nickel capping also caused a 2x increase in the number of advantageous 'bamboo' grains that span the entire trench, which effectively block electromigration pathways. These data provides a more fundamental understanding of manipulating the microstructure in copper interconnects using pre-anneal capping layers, and demonstrates a strategy to improve the microstructure beyond the capabilities of simple annealing.

Multi-level Simulation of a Real Time Vibration Monitoring System Component

NASA Technical Reports Server (NTRS)

Robertson, Bryan A.; Wilkerson, Delisa

2005-01-01

This paper describes the development of a custom built Digital Signal Processing (DSP) printed circuit board designed to implement the Advanced Real Time Vibration Monitoring Subsystem proposed by Marshall Space Flight Center (MSFC) Transportation Directorate in 2000 for the Space Shuttle Main Engine Advanced Health Management System (AHMS). This Real Time Vibration Monitoring System (RTVMS) is being developed for ground use as part of the AHMS Health Management Computer-Integrated Rack Assembly (HMC-IRA). The HMC-IRA RTVMS design contains five DSPs which are highly interconnected through individual communication ports, shared memory, and a unique communication router that allows all the DSPs to receive digitized data fiom two multi-channel analog boards simultaneously. This paper will briefly cover the overall board design but will focus primarily on the state-of-the-art simulation environment within which this board was developed. This 16-layer board with over 1800 components and an additional mezzanine card has been an extremely challenging design. Utilization of a Mentor Graphics simulation environment provided the unique board and system level simulation capability to ascertain any timing or functional concerns before production. By combining VHDL, Synopsys Software and Hardware Models, and the Mentor Design Capture Environment, multiple simulations were developed to verify the RTVMS design. This multi-level simulation allowed the designers to achieve complete operability without error the first time the RTVMS printed circuit board was powered. The HMC-IRA design has completed all engineering and deliverable unit testing. P

The Pleasure Evoked by Sad Music Is Mediated by Feelings of Being Moved

PubMed Central

Vuoskoski, Jonna K.; Eerola, Tuomas

2017-01-01

Why do we enjoy listening to music that makes us sad? This question has puzzled music psychologists for decades, but the paradox of “pleasurable sadness” remains to be solved. Recent findings from a study investigating the enjoyment of sad films suggest that the positive relationship between felt sadness and enjoyment might be explained by feelings of being moved (Hanich et al., 2014). The aim of the present study was to investigate whether feelings of being moved also mediated the enjoyment of sad music. In Experiment 1, 308 participants listened to five sad music excerpts and rated their liking and felt emotions. A multilevel mediation analysis revealed that the initial positive relationship between liking and felt sadness (r = 0.22) was fully mediated by feelings of being moved. Experiment 2 explored the interconnections of perceived sadness, beauty, and movingness in 27 short music excerpts that represented independently varying levels of sadness and beauty. Two multilevel mediation analyses were carried out to test competing hypotheses: (A) that movingness mediates the effect of perceived sadness on liking, or (B) that perceived beauty mediates the effect of sadness on liking. Stronger support was obtained for Hypothesis A. Our findings suggest that – similarly to the enjoyment of sad films – the aesthetic appreciation of sad music is mediated by being moved. We argue that felt sadness may contribute to the enjoyment of sad music by intensifying feelings of being moved. PMID:28377740

Multi-level Simulation of a Real Time Vibration Monitoring System Component

NASA Technical Reports Server (NTRS)

Roberston, Bryan; Wilkerson, DeLisa

2004-01-01

This paper describes the development of a custom built Digital Signal Processing (DSP) printed circuit board designed to implement the Advanced Real Time Vibration Monitoring Subsystem proposed by MSFC Transportation Directorate in 2000 for the Space Shuttle Main Engine Advanced Health Management System (AHMS). This Real Time Vibration Monitoring System (RTVMS) is being developed for ground use as part of the AHMS Health Management Computer-Integrated Rack Assembly (HMC-IRA). The HMC-IRA RTVMS design contains five DSPs which are highly interconnected through individual communication ports, shared memory, and a unique communication router that allows all the DSPs to receive digitized data from two multi-channel analog boards simultaneously. This paper will briefly cover the overall board design but will focus primarily on the state-of-the-art simulation environment within which this board was developed. This 16-layer board with over 1800 components and an additional mezzanine card has been an extremely challenging design. Utilization of a Mentor Graphics simulation environment provided the unique board and system level simulation capability to ascertain any timing or functional concerns before production. By combining VHDL, Synopsys Software and Hardware Models, and the Mentor Design Capture Environment, multiple simulations were developed to verify the RTVMS design. This multi-level simulation allowed the designers to achieve complete operability without error the first time the RTVMS printed circuit board was powered. The HMCIRA design has completed all engineering unit testing and the deliverable unit is currently under development.

Self-organization of helium precipitates into elongated channels within metal nanolayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Di; Li, Nan; Yuryev, Dina

Material degradation due to precipitation of implanted helium (He) is a key concern in nuclear energy. Decades of research have mapped out the fate of He precipitates in metals, from nucleation and growth of equiaxed bubbles and voids to formation and bursting of surface blisters. By contrast, we show that He precipitates confined within nanoscale metal layers depart from their classical growth trajectories: They self-organize into elongated channels. These channels form via templated nucleation of He precipitates along layer surfaces followed by their growth and spontaneous coalescence into stable precipitate lines. The total line length and connectivity increases with themore » amount of implanted He, indicating that these channels ultimately interconnect into percolating “vascular” networks. In conclusion, vascularized metal composites promise a transformative solution to He-induced damage by enabling in operando outgassing of He and other impurities while maintaining material integrity.« less

Bottom-up nanoconstruction by the welding of individual metallic nanoobjects using nanoscale solder.

PubMed

Peng, Yong; Cullis, Tony; Inkson, Beverley

2009-01-01

We report that individual metallic nanowires and nanoobjects can be assembled and welded together into complex nanostructures and conductive circuits by a new nanoscale electrical welding technique using nanovolumes of metal solder. At the weld sites, nanoscale volumes of a chosen metal are deposited using a sacrificial nanowire, which ensures that the nanoobjects to be bonded retain their structural integrity. We demonstrate by welding both similar and dissimilar materials that the use of nanoscale solder is clean, controllable, and reliable and ensures both mechanically strong and electrically conductive contacts. Nanoscale weld resistances of just 20Omega are achieved by using Sn solder. Precise engineering of nanowelds by this technique, including the chemical flexibility of the nanowire solder, and high spatial resolution of the nanowelding method, should result in research applications including fabrication of nanosensors and nanoelectronics constructed from a small number of nanoobjects, and repair of interconnects and failed nanoscale electronics.

Self-organization of helium precipitates into elongated channels within metal nanolayers

DOE PAGES

Chen, Di; Li, Nan; Yuryev, Dina; ...

2017-11-10

Material degradation due to precipitation of implanted helium (He) is a key concern in nuclear energy. Decades of research have mapped out the fate of He precipitates in metals, from nucleation and growth of equiaxed bubbles and voids to formation and bursting of surface blisters. By contrast, we show that He precipitates confined within nanoscale metal layers depart from their classical growth trajectories: They self-organize into elongated channels. These channels form via templated nucleation of He precipitates along layer surfaces followed by their growth and spontaneous coalescence into stable precipitate lines. The total line length and connectivity increases with themore » amount of implanted He, indicating that these channels ultimately interconnect into percolating “vascular” networks. In conclusion, vascularized metal composites promise a transformative solution to He-induced damage by enabling in operando outgassing of He and other impurities while maintaining material integrity.« less

Self-organization of helium precipitates into elongated channels within metal nanolayers

PubMed Central

Chen, Di; Li, Nan; Yuryev, Dina; Baldwin, J. Kevin; Wang, Yongqiang; Demkowicz, Michael J.

2017-01-01

Material degradation due to precipitation of implanted helium (He) is a key concern in nuclear energy. Decades of research have mapped out the fate of He precipitates in metals, from nucleation and growth of equiaxed bubbles and voids to formation and bursting of surface blisters. By contrast, we show that He precipitates confined within nanoscale metal layers depart from their classical growth trajectories: They self-organize into elongated channels. These channels form via templated nucleation of He precipitates along layer surfaces followed by their growth and spontaneous coalescence into stable precipitate lines. The total line length and connectivity increases with the amount of implanted He, indicating that these channels ultimately interconnect into percolating “vascular” networks. Vascularized metal composites promise a transformative solution to He-induced damage by enabling in operando outgassing of He and other impurities while maintaining material integrity. PMID:29152573

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Trajectories of women's homelessness in Canada's 3 northern territories

PubMed Central

Schmidt, Rose; Hrenchuk, Charlotte; Bopp, Judie; Poole, Nancy

2015-01-01

Background Repairing the Holes in the Net was a 2-year, multilevel action research project designed to inform the development of culturally appropriate and gender-specific services for northern women who are homeless or marginally housed and who face mental health and substance use concerns. The study was designed to learn about the barriers and supports experienced by homeless women in the North when accessing mental health care, shelter, housing and other services; and to inform the work of northern service providers and policy advocates in a position to implement adjustments in their praxis. Methods This article describes the trajectories of women's service access and their ideas for service improvement from 61 qualitative, semi-structured interviews conducted with homeless women in Whitehorse, Yukon (YT), Yellowknife, Northwest Territories (NT), and Iqualit, Nunavut (NU). Results Unresolved trauma, poverty and social exclusion, inability to find and maintain housing and ineffective services emerged as interconnected and multifaceted challenges related to women's service engagement. In the face of these challenges, women displayed significant resilience and resistance, and offered important ideas for service improvement. Conclusions The 4 interconnected systemic challenges identified in the research, coupled with specific ideas for change cited by the resilient homeless women interviewed, offer points of entry to improve service policy and delivery. Implementing trauma-informed approaches emerged as a key example of how access to, and quality of, services could be improved for homeless women in the North. PMID:26700413

Composite oxygen ion transport element

DOEpatents

Chen, Jack C [Getzville, NY; Besecker, Charles J [Batavia, IL; Chen, Hancun [Williamsville, NY; Robinson, Earil T [Mentor, OH

2007-06-12

A composite oxygen ion transport element that has a layered structure formed by a dense layer to transport oxygen ions and electrons and a porous support layer to provide mechanical support. The dense layer can be formed of a mixture of a mixed conductor, an ionic conductor, and a metal. The porous support layer can be fabricated from an oxide dispersion strengthened metal, a metal-reinforced intermetallic alloy, a boron-doped Mo.sub.5Si.sub.3-based intermetallic alloy or combinations thereof. The support layer can be provided with a network of non-interconnected pores and each of said pores communicates between opposite surfaces of said support layer. Such a support layer can be advantageously employed to reduce diffusion resistance in any type of element, including those using a different material makeup than that outlined above.

Electrodeposition for Electrochemical Energy Conversion and Storage Devices

NASA Astrophysics Data System (ADS)

Shaigan, Nima

Electrodeposition of metals, alloys, metal oxides, conductive polymers, and their composites plays a pivotal role in fabrication processes of some recently developed electrochemical energy devices, most particularly fuel cells, supercapacitors, and batteries. Unique nanoscale architectures of electrocatalysts for low temperature fuel cells, including proton exchange membrane fuel cell (PEMFC) and direct methanol fuel cell (DMFC), can only be obtained through electrodeposition processes. Promising, cost-effective conductive/protective coatings for stainless steel interconnects used in solid oxide fuel cells (SOFCs) have been achieved employing a variety of electrodeposition techniques. In supercapacitors, anodic deposition of metal oxides, conductive polymers, and their composites is a versatile technique for fabrication of electrodes with distinctive morphology and exceptional specific capacitance. Electrodeposition is also very recently employed for preparation of Sn-based anodes for lithium ion batteries.

IO-MFA and Thermodynamic Approach for Metal Recycling

NASA Astrophysics Data System (ADS)

Nakajima, Kenichi; Matsubae, Kazuyo; Kondo, Yasushi; Nakamura, Shinichiro; Nagasaka, Tetsuya

Recently, the issue of sustainable resource management has been increasingly recognized. In order to increase resource efficiency, Castro et al. (2004) pointed out an importance to understand the interconnections between the materials' processing routes and their thermodynamic constraints, and discussed losses due to contaminations during recycling. One of the dominant solutions to avoid such losses or contaminants is knowledge about the substance flows in material cycles. Material flow analysis (MFA) is a powerful tool to understand the resource consumption and material cycle in the national economy. Some advanced MFA studies discussed the complex web of metal flows and their linkages (Nakamura et al. 2007, 2008). Discussions on the limitations of impurity removal and the recoverability of elements in the recycling of EoL metal products, however, have been insufficient even in conventional MFA studies.

Carbon nanotube-clamped metal atomic chain

PubMed Central

Tang, Dai-Ming; Yin, Li-Chang; Li, Feng; Liu, Chang; Yu, Wan-Jing; Hou, Peng-Xiang; Wu, Bo; Lee, Young-Hee; Ma, Xiu-Liang; Cheng, Hui-Ming

2010-01-01

Metal atomic chain (MAC) is an ultimate one-dimensional structure with unique physical properties, such as quantized conductance, colossal magnetic anisotropy, and quantized magnetoresistance. Therefore, MACs show great potential as possible components of nanoscale electronic and spintronic devices. However, MACs are usually suspended between two macroscale metallic electrodes; hence obvious technical barriers exist in the interconnection and integration of MACs. Here we report a carbon nanotube (CNT)-clamped MAC, where CNTs play the roles of both nanoconnector and electrodes. This nanostructure is prepared by in situ machining a metal-filled CNT, including peeling off carbon shells by spatially and elementally selective electron beam irradiation and further elongating the exposed metal nanorod. The microstructure and formation process of this CNT-clamped MAC are explored by both transmission electron microscopy observations and theoretical simulations. First-principles calculations indicate that strong covalent bonds are formed between the CNT and MAC. The electrical transport property of the CNT-clamped MAC was experimentally measured, and quantized conductance was observed. PMID:20427743

Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist

NASA Astrophysics Data System (ADS)

Minter, Jason P.; Ross, Matthew F.; Livesay, William R.; Wong, Selmer S.; Narcy, Mark E.; Marlowe, Trey

1999-06-01

In the manufacture of many types of integrated circuit and thin film devices, it is desirable to use a lift-of process for the metallization step to avoid manufacturing problems encountered when creating metal interconnect structures using plasma etch. These problems include both metal adhesion and plasma etch difficulties. Key to the success of the lift-off process is the creation of a retrograde or undercut profile in the photoresists before the metal deposition step. Until now, lift-off processing has relied on costly multi-layer photoresists schemes, image reversal, and non-repeatable photoresist processes to obtain the desired lift-off profiles in patterned photoresist. This paper present a simple, repeatable process for creating robust, user-defined lift-off profiles in single layer photoresist using a non-thermal electron beam flood exposure. For this investigation, lift-off profiles created using electron beam flood exposure of many popular photoresists were evaluated. Results of lift-off profiles created in positive tone AZ7209 and ip3250 are presented here.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shinde, Subhash L.; Teifel, John; Flores, Richard S.

A 3D stacked sASIC is provided that includes a plurality of 2D reconfigurable structured structured ASIC (sASIC) levels interconnected through hard-wired arrays of 3D vias. The 2D sASIC levels may contain logic, memory, analog functions, and device input/output pad circuitry. During fabrication, these 2D sASIC levels are stacked on top of each other and fused together with 3D metal vias. Such 3D vias may be fabricated as through-silicon vias (TSVs). They may connect to the back-side of the 2D sASIC level, or they may be connected to top metal pads on the front-side of the 2D sASIC level.

A fast and flexible method for manufacturing 3D molded interconnect devices by the use of a rapid prototyping technology

NASA Astrophysics Data System (ADS)

Amend, P.; Pscherer, C.; Rechtenwald, T.; Frick, T.; Schmidt, M.

This paper presents experimental results of manufacturing MID-prototypes by means of SLS, laser structuring and metallization. Therefore common SLS powder (PA12) doped with laser structuring additives is used. First of all the influence of the additives on the characteristic temperatures of melting and crystallization is analyzed by means of DSC. Afterwards the sintering process is carried out and optimized by experiments. Finally the generated components are qualified regarding their density, mechanical properties and surface roughness. Especially the surface quality is important for the metallization process. Therefore surface finishing techniques are investigated.

Monolithic integrated high-T.sub.c superconductor-semiconductor structure

NASA Technical Reports Server (NTRS)

Barfknecht, Andrew T. (Inventor); Garcia, Graham A. (Inventor); Russell, Stephen D. (Inventor); Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Clayton, Stanley R. (Inventor)

2000-01-01

A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Nitrogen and Fluorine-Codoped Carbon Nanowire Aerogels as Metal-Free Electrocatalysts for Oxygen Reduction Reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Shaofang; Zhu, Chengzhou; Song, Junhua

2017-07-11

The development of active, durable, and low-cost catalysts to replace noble metal-based materials is highly desirable to promote the sluggish oxygen reduction reaction in fuel cells. Herein, nitrogen and fluorine-codoped three-dimensional carbon nanowire aerogels, composed of interconnected carbon nanowires, were synthesized for the first time by a hydrothermal carbonization process. Owing to their porous nanostructures and heteroatom-doping, the as-prepared carbon nanowire aerogels, with optimized composition, present excellent electrocatalytic activity that is comparable to commercial Pt/C. Remarkably, the aerogels also exhibit superior stability and methanol tolerance. This synthesis procedure paves a new way to design novel heteroatomdoped catalysts.

Channeling of electron transport to improve collection efficiency in mesoporous titanium dioxide dye sensitized solar cell stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fakharuddin, Azhar; Ahmed, Irfan; Yusoff, Mashitah M.

2014-02-03

Dye-sensitized solar cell (DSC) modules are generally made by interconnecting large photoelectrode strips with optimized thickness (∼14 μm) and show lower current density (J{sub SC}) compared with their single cells. We found out that the key to achieving higher J{sub SC} in large area devices is optimized photoelectrode volume (V{sub D}), viz., thickness and area which facilitate the electron channeling towards working electrode. By imposing constraints on electronic path in a DSC stack, we achieved >50% increased J{sub SC} and ∼60% increment in photoelectric conversion efficiency in photoelectrodes of similar V{sub D} (∼3.36 × 10{sup −4} cm{sup 3}) without using any metallic gridmore » or a special interconnections.« less

A flexible skin patch for continuous physiological monitoring of mental disorders

NASA Astrophysics Data System (ADS)

Jang, Won Ick; Lee, Bong Kuk; Ryu, Jin Hwa; Baek, In-Bok; Yu, Han Young; Kim, Seunghwan

2017-10-01

In this study, we have newly developed a flexible adhesive skin patch of electrocardiogram (ECG) device for continuous physiological monitoring of mental disorders. In addition, this flexible patch did not cause any damage to the skin even after 24 hours attachment. We have also suggested the possibility of novel interconnection for copper film on polyimide and polydimethylsiloxane (PDMS) layers of the flexible patch. Self-align and soldering of IC chips such as resistor between metal pads on flexible skin patch have also successfully fabricated for 5 min at 180 °C in vacuum oven. Low temperature interconnection technology based on a Sn42/Bi58 solder was also developed for flexible ECG devices. As a result, we can monitor the mental health status through a comprehensive analysis of biological signals from flexible ECG devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bauer, R.; Ebersberger, B.; Kupfer, C.

SnAg solder bump is one bump type which is used to replace eutectic SnPb bumps. In this work tests have been done to characterize the reliability properties of this bump type. Electromigration (EM) tests, which were accelerated by high current and high temperature and high temperature storage (HTS) tests were performed. It was found that the reliability properties are sensitive to the material combinations in the interconnect stack. The interconnect stack includes substrate pad, pad finish, bump, underbump metallization (UBM) and the chip pad. Therefore separate test groups for SnAg bumps on Cu substrate pads with organic solderability preservative (OSP)more » finish and the identical bumps on pads with Ni/Au finish were used. In this paper the reliability test results and the corresponding failure analysis are presented. Some explanations about the differences in formation of intermetallic compounds (IMCs) are given.« less

Statistical evaluation of metal fill widths for emulated metal fill in parasitic extraction methodology

NASA Astrophysics Data System (ADS)

J-Me, Teh; Noh, Norlaili Mohd.; Aziz, Zalina Abdul

2015-05-01

In the chip industry today, the key goal of a chip development organization is to develop and market chips within a short time frame to gain foothold on market share. This paper proposes a design flow around the area of parasitic extraction to improve the design cycle time. The proposed design flow utilizes the usage of metal fill emulation as opposed to the current flow which performs metal fill insertion directly. By replacing metal fill structures with an emulation methodology in earlier iterations of the design flow, this is targeted to help reduce runtime in fill insertion stage. Statistical design of experiments methodology utilizing the randomized complete block design was used to select an appropriate emulated metal fill width to improve emulation accuracy. The experiment was conducted on test cases of different sizes, ranging from 1000 gates to 21000 gates. The metal width was varied from 1 x minimum metal width to 6 x minimum metal width. Two-way analysis of variance and Fisher's least significant difference test were used to analyze the interconnect net capacitance values of the different test cases. This paper presents the results of the statistical analysis for the 45 nm process technology. The recommended emulated metal fill width was found to be 4 x the minimum metal width.

Preparation and properties of a MnCo2O4 for ceramic interconnect of solid oxide fuel cell via glycine nitrate process

NASA Astrophysics Data System (ADS)

Yoon, Mi Young; Lee, Eun Jung; Song, Rak Hyun; Hwang, Hae Jin

2011-12-01

MnCo2O4 powder was prepared by a wet chemistry method using metal nitrates and glycine in an aqueous solution. The phase stability, sintering behavior, thermal expansion and electrical conductivity were examined to characterize powder suitability as an interconnect material in solid oxide fuel cells (SOFCs). X-ray diffraction indicated that the MnCo2O4 spinel synthesized by the glycine nitrate process was stable until 1100 °C and it was possible to obtain a fully densified single phase spinel. On the other hand, the MnCo2O4 synthesized by a solid state reaction decomposed into a cubic spinel and CoO after being sintered at 1100 °C. This might be associated with the reduction of Co3+ in the octahedral site of the cubic spinel phase. MnCo2O4 showed a thermal expansion coefficient comparable to that of other SOFCs components, as well as good electrical conductivity. Therefore, MnCo2O4 is a potential candidate for the ceramic interconnects in SOFCs, provided the phase instability under reducing environments can be improved.

Growing Aligned Carbon Nanotubes for Interconnections in ICs

NASA Technical Reports Server (NTRS)

Li, Jun; Ye, Qi; Cassell, Alan; Ng, Hou Tee; Stevens, Ramsey; Han, Jie; Meyyappan, M.

2005-01-01

A process for growing multiwalled carbon nanotubes anchored at specified locations and aligned along specified directions has been invented. Typically, one would grow a number of the nanotubes oriented perpendicularly to a silicon integrated-circuit (IC) substrate, starting from (and anchored on) patterned catalytic spots on the substrate. Such arrays of perpendicular carbon nanotubes could be used as electrical interconnections between levels of multilevel ICs. The process (see Figure 1) begins with the formation of a layer, a few hundred nanometers thick, of a compatible electrically insulating material (e.g., SiO(x) or Si(y)N(z) on the silicon substrate. A patterned film of a suitable electrical conductor (Al, Mo, Cr, Ti, Ta, Pt, Ir, or doped Si), having a thickness between 1 nm and 2 m, is deposited on the insulating layer to form the IC conductor pattern. Next, a catalytic material (usually, Ni, Fe, or Co) is deposited to a thickness between 1 and 30 nm on the spots from which it is desired to grow carbon nanotubes. The carbon nanotubes are grown by plasma-enhanced chemical vapor deposition (PECVD). Unlike the matted and tangled carbon nanotubes grown by thermal CVD, the carbon nanotubes grown by PECVD are perpendicular and freestanding because an electric field perpendicular to the substrate is used in PECVD. Next, the free space between the carbon nanotubes is filled with SiO2 by means of CVD from tetraethylorthosilicate (TEOS), thereby forming an array of carbon nanotubes embedded in SiO2. Chemical mechanical polishing (CMP) is then performed to remove excess SiO2 and form a flat-top surface in which the outer ends of the carbon nanotubes are exposed. Optionally, depending on the application, metal lines to connect selected ends of carbon nanotubes may be deposited on the top surface. The top part of Figure 2 is a scanning electron micrograph (SEM) of carbon nanotubes grown, as described above, on catalytic spots of about 100 nm diameter patterned by electron-beam lithography. These and other nanotubes were found to have lengths ranging from 2 to 10 m and diameters ranging from 30 to 200 nm, the exact values of length depending on growth times and conditions and the exact values of diameter depending on the diameters and thicknesses of the catalyst spots. The bottom part of Figure 2 is an SEM of an embedded array of carbon nanotubes after CMP.

High-Density, High-Bandwidth, Multilevel Holographic Memory

NASA Technical Reports Server (NTRS)

Chao, Tien-Hsin

2008-01-01

A proposed holographic memory system would be capable of storing data at unprecedentedly high density, and its data transfer performance in both reading and writing would be characterized by exceptionally high bandwidth. The capabilities of the proposed system would greatly exceed even those of a state-of-the art memory system, based on binary holograms (in which each pixel value represents 0 or 1), that can hold .1 terabyte of data and can support a reading or writing rate as high as 1 Gb/s. The storage capacity of the state-of-theart system cannot be increased without also increasing the volume and mass of the system. However, in principle, the storage capacity could be increased greatly, without significantly increasing the volume and mass, if multilevel holograms were used instead of binary holograms. For example, a 3-bit (8-level) hologram could store 8 terabytes, or an 8-bit (256-level) hologram could store 256 terabytes, in a system having little or no more size and mass than does the state-of-the-art 1-terabyte binary holographic memory. The proposed system would utilize multilevel holograms. The system would include lasers, imaging lenses and other beam-forming optics, a block photorefractive crystal wherein the holograms would be formed, and two multilevel spatial light modulators in the form of commercially available deformable-mirror-device spatial light modulators (DMDSLMs) made for use in high speed input conversion of data up to 12 bits. For readout, the system would also include two arrays of complementary metal oxide/semiconductor (CMOS) photodetectors matching the spatial light modulators. The system would further include a reference-beam sterring device (equivalent of a scanning mirror), containing no sliding parts, that could be either a liquid-crystal phased-array device or a microscopic mirror actuated by a high-speed microelectromechanical system. Time-multiplexing and the multilevel nature of the DMDSLM would be exploited to enable writing and reading of multilevel holograms. The DMDSLM would also enable transfer of data at a rate of 7.6 Gb/s or perhaps somewhat higher.

Antenna-coupled unbiased detectors for LW-IR regime

NASA Astrophysics Data System (ADS)

Tiwari, Badri Nath

At room temperature (300K), the electromagnetic (EM) radiation emitted by humans and other living beings peaks mostly in the long-wavelength infrared (LW-IR) regime. And since the atmosphere shows relatively little absorption in this band, applications such as target detection, tracking, active homing, and navigation in autonomous vehicles extensively use the LW-IR frequency range. The present research work is focused on developing antenna-based, uncooled, and unbiased detectors for the LW-IR regime. In the first part of this research, antenna-coupled metal-oxide-metal diodes (ACMOMD) are investigated. In response to the EM radiation, high-frequency antenna currents are induced in the antenna. An asymmetric-barrier Al-Al2O3-Pt MOM diode rectifies the antenna currents. Two different types of fabrication processes have been developed for ACMOMDs namely one-step lithography and two-step lithography. The major drawbacks of MOM-based devices include hard-to-control fabrication processes, generally very high zero-biased resistances, and vulnerability to electrostatic discharges, leading to unstable electrical characteristics. The second part of this research focuses on the development of unbiased LW-IR sensors based on the Seebeck effect. If two different metals are joined together at one end and their other ends are open-circuited, and if a non-zero temperature difference exists between the joined end and the open ends, then a non-zero open-circuit voltage can be measured between the open ends of the wires. Based on this effect, we have developed antenna-coupled nano-thermocouples (ACNTs) in which radiation-induced antenna currents produce polarization-dependent heating of the joined end of the two metals whereas the open ends remain at substrate temperature. This polarization-dependent heating induces polarization-dependent temperature difference between the joined end and the open ends of the metals leading to a polarization-dependent open-circuit voltage between the open ends of the metals. A CW CO2 laser tuned at 10.6 mum wavelength has been used for infrared characterization of these sensors. For these sensors, average responsivity of 22.7 mV/W, signal-to-noise (SNR) ratio of 29 dB, noise equivalent power (NEP) of 1.55 nW, and specific detectivity (D*) of 1.77x105 cm. Hz .W--1 were measured. ACNTs are expected to operate at frequencies much beyond 400 KHz. The third part of this research focuses on the effect of DC read-out interconnects on polarization characteristics of the planar dipole antennas. Different geometries of the interconnects present different electromagnetic boundary conditions to the antenna, and thus affect the far-field polarization characteristics of the antenna. Four designs of DC read-out interconnects are fabricated and their polarization-dependent IR responses are experimentally measured. The High Frequency Structure Simulator (HFSS) from ANSYS is used to simulate the polarization characteristics of the antenna with different read-out geometries.

DARPA Perspectives on Multifunctional Materials/Power and Energy

DTIC Science & Technology

2012-08-09

In-situ growth of aligned CNTs Electronics Graphene /Metal oxide CMOS interconnects Erosion Diamond/ZnS LWIR missile domes Tribology TiN/Carbon...application Optoelectronics InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel...InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel Tribology TiN/High speed

High-rate and long-life lithium-ion battery performance of hierarchically hollow-structured NiCo 2O 4/CNT nanocomposite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jie; Wu, Jianzhong; Wu, Zexing

In this paper, 3D-transition binary metal oxides have been considered as promising anode materials for lithium-ion batteries with improved reversible capacity, structural stability and electronic conductivity compared with single metal oxides. Here, carbon nanotube supported NiCo 2O 4 nanoparticles (NiCo 2O 4/CNT) with 3D hierarchical hollow structure are fabricated via a simple one-pot method. The NiCo 2O 4 nanoparticles with interconnected pores are consists of small nanocrystals. When used as anode material for the lithium-ion battery, NiCo 2O 4/CNT exhibits enhanced electrochemical performance than that of Co 3O 4/CNT and NiO/CNT. Moreover, ultra-high discharge/charge stability was obtained for 4000 cyclesmore » at a current density of 5 A g –1. The superior battery performance of NiCo 2O 4 nanoparticles is probably attributed to the special structural features and physical characteristics, including integrity, hollow structure with interconnected pores, which providing sufficient accommodation for the volume change during charge/discharge process. Besides, the consisting of ultra-small crystals enhanced the utility of active material, and intimate interaction with CNTs improved the electron-transfer rate.« less

High-rate and long-life lithium-ion battery performance of hierarchically hollow-structured NiCo 2O 4/CNT nanocomposite

DOE PAGES

Wang, Jie; Wu, Jianzhong; Wu, Zexing; ...

2017-05-17

In this paper, 3D-transition binary metal oxides have been considered as promising anode materials for lithium-ion batteries with improved reversible capacity, structural stability and electronic conductivity compared with single metal oxides. Here, carbon nanotube supported NiCo 2O 4 nanoparticles (NiCo 2O 4/CNT) with 3D hierarchical hollow structure are fabricated via a simple one-pot method. The NiCo 2O 4 nanoparticles with interconnected pores are consists of small nanocrystals. When used as anode material for the lithium-ion battery, NiCo 2O 4/CNT exhibits enhanced electrochemical performance than that of Co 3O 4/CNT and NiO/CNT. Moreover, ultra-high discharge/charge stability was obtained for 4000 cyclesmore » at a current density of 5 A g –1. The superior battery performance of NiCo 2O 4 nanoparticles is probably attributed to the special structural features and physical characteristics, including integrity, hollow structure with interconnected pores, which providing sufficient accommodation for the volume change during charge/discharge process. Besides, the consisting of ultra-small crystals enhanced the utility of active material, and intimate interaction with CNTs improved the electron-transfer rate.« less

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

PubMed

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Studies of Scale Formation and Kinetics of Crofer 22 APU and Haynes 230 in Carbon Oxide-Containing Environment for SOFC Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ziomek-Moroz, M.; Covino, B.S., Jr.; Holcomb, G.R.

2006-01-01

Significant progress in reducing the operating temperature of SOFCs below 800oC may allow the use of chromia-forming metallic interconnects at a substantial cost savings. Hydrogen is the main fuel for all types of fuel cells except direct methanol fuel cells. Hydrogen can be generated from fossil fuels, including coal, natural gas, diesel, gasoline, other hydrocarbons, and oxygenates (e.g., methanol, ethanol, butanol, etc.). Carbon oxides present in the hydrogen fuel can cause significant performance problems due to carbon formation (coking). Also, literature data indicate that in CO/CO2 gaseous environments, metallic materials that gain their corrosion resistance due to formation of Cr2O3,more » could form stable chromium carbides. The chromium carbide formation causes depletion of chromium in these alloys. If the carbides oxidize, they form non-protective scales. Considering a potential detrimental effect of carbon oxides on iron- and nickel-base alloy stability, determining corrosion performance of metallic interconnect candidates in carbon oxide-containing environments at SOFC operating temperatures is a must. In this research, the corrosion behavior of Crofer 22 APU and Haynes 230 was studied in a CO-rich atmosphere at 750°C. Chemical composition of the gaseous environment at the outlet was determined using gas chromatography (GC). After 800 h of exposure to the gaseous environment the surfaces of the corroded samples were studied by scanning electron microscopy (SEM) equipped with microanalytical capabilities. X-ray diffraction (XRD) analysis was also used in this study.« less

In situ impact assessment of wastewater effluents by integrating multi-level biomarker responses in the pale chub (Zacco platypus).

PubMed

Kim, Woo-Keun; Jung, Jinho

2016-06-01

The integration of biomarker responses ranging from the molecular to the individual level is of great interest for measuring the toxic effects of hazardous chemicals or effluent mixtures on aquatic organisms. This study evaluated the effects of wastewater treatment plant (WWTP) effluents on the freshwater pale chub Zacco platypus by using multi-level biomarker responses at molecular [mRNA expression of catalase (CAT), superoxide dismutase (SOD), glutathione S-transferase (GST), and metallothionein (MT)], biochemical (enzyme activities of CAT, SOD, GST, and concentration of MT), and physiological [condition factor (CF) and liver somatic index (LSI)] levels. The mRNA expression levels of GST and MT in Z. platypus from a site downstream of a WWTP significantly increased by 2.2- and 4.5-fold (p<0.05) when compared with those from an upstream site. However, the enzyme activities of CAT, SOD, and GST in fish from the downstream site significantly decreased by 43%, 98%, and 13%, respectively (p<0.05), except for an increase in MT concentration (41%). In addition, a significant increase in LSI (46%) was observed in Z. platypus from the downstream site (p<0.05). Concentrations of Cu, Zn, Cd, and Pb in the liver of Z. platypus were higher (530%, 353%, 800%, and 2,200%, respectively) in fish from a downstream site than in fish from an upstream location, and several multi-level biomarker responses were significantly correlated with the accumulated metals in Z. platypus (p<0.05). Integrated biomarker responses at molecular, biochemical, and physiological levels (multi-level IBR) were much higher (about 4-fold) at the downstream site than at the upstream site. This study suggests that the multi-level IBR approach is very useful for quantifying in situ adverse effects of WWTP effluents. Copyright © 2016 Elsevier Inc. All rights reserved.

Variability of multilevel switching in scaled hybrid RS/CMOS nanoelectronic circuits: theory

NASA Astrophysics Data System (ADS)

Heittmann, Arne; Noll, Tobias G.

2013-07-01

A theory is presented which describes the variability of multilevel switching in scaled hybrid resistive-switching/CMOS nanoelectronic circuits. Variability is quantified in terms of conductance variation using the first two moments derived from the probability density function (PDF) of the RS conductance. For RS, which are based on the electrochemical metallization effect (ECM), this variability is - to some extent - caused by discrete events such as electrochemical reactions, which occur on atomic scale and are at random. The theory shows that the conductance variation depends on the joint interaction between the programming circuit and the resistive switch (RS), and explicitly quantifies the impact of RS device parameters and parameters of the programming circuit on the conductance variance. Using a current mirror as an exemplary programming circuit an upper limit of 2-4 bits (dependent on the filament surface area) is estimated as the storage capacity exploiting the multilevel capabilities of an ECM cell. The theoretical results were verified by Monte Carlo circuit simulations on a standard circuit simulation environment using an ECM device model which models the filament growth by a Poisson process. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

Development and production integration of a planarized AlCu interconnect process for submicron CMOS

NASA Astrophysics Data System (ADS)

Brown, Kevin C.; Hill, Rodney; Reddy, Krishna; Gadepally, Kamesh

1995-09-01

A planarized aluminum alloy interconnect has been developed as an alternative to tungsten plugs for a 0.65 (mu) CMOS technology. Contact resistance can increase with either an inadequate RF sputter clean or titanium that is too thin to reduce the native oxide. Diffusion barrier results show that a minimum amount of titanium nitride, whether deposited conventionally or with collimation, is necessary for low junction leakage and good sort yield. Stacked contacts and vias are supported while via resistance and defect density are improved. Electrical bridging due to silicon residues from AlSiCu can be minimized with metal overetching, but not to the extent of AlCu. Sidewall pitting was observed to be due to galvanic corrosion from copper precipitate formation. Overall yield has been improved along with decreased wafer cost compared to conventional tungsten plug technology.

Manufacturability of the X Architecture at the 90-nm technology node

NASA Astrophysics Data System (ADS)

Smayling, Michael C.; Sarma, Robin C.; Nagata, Toshiyuki; Arora, Narain; Duane, Michael P.; Oemardani, Shiany; Shah, Santosh

2004-05-01

In this paper, we discuss the results from a test chip that demonstrate the manufacturability and integration-worthiness of the X Architecture at the 90-nm technology node. We discuss how a collaborative effort between the design and chip making communities used the current generation of mask, lithography, wafer processing, inspection and metrology equipment to create 45 degree wires in typical metal pitches for the upper layers on a 90-nm device in a production environment. Cadence Design Systems created the test structure design and chip validation tools for the project. Canon"s KrF ES3 and ArF AS2 scanners were used for the lithography. Applied Materials used its interconnect fabrication technologies to produce the multilayer copper, low-k interconnect on 300-mm wafers. The results were confirmed for critical dimension and defect levels using Applied Materials" wafer inspection and metrology systems.

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

NASA Astrophysics Data System (ADS)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-07-01

Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

Template-directed fabrication of porous gas diffusion layer for magnesium air batteries

NASA Astrophysics Data System (ADS)

Xue, Yejian; Miao, He; Sun, Shanshan; Wang, Qin; Li, Shihua; Liu, Zhaoping

2015-11-01

The uniform micropore distribution in the gas diffusion layers (GDLs) of the air-breathing cathode is very important for the metal air batteries. In this work, the super-hydrophobic GDL with the interconnected regular pores is prepared by a facile silica template method, and then the electrochemical properties of the Mg air batteries containing these GDLs are investigated. The results indicate that the interconnected and uniform pore structure, the available water-breakout pressure and the high gas permeability coefficient of the GDL can be obtained by the application of 30% silica template. The maximum power density of the Mg air battery containing the GDL with 30% regular pores reaches 88.9 mW cm-2 which is about 1.2 times that containing the pristine GDL. Furthermore, the GDL with 30% regular pores exhibits the improved the long term hydrophobic stability.

Multi-level Capacitive Memory Effect in Metal/Oxide/Floating-Schottky Junction

NASA Astrophysics Data System (ADS)

Choi, Gahyun; Jung, Sungchul; Yoon, Hoon Hahn; Jeon, Youngeun; Park*, Kibog

2015-03-01

A memory computing (memcomputing) system can store and process information at the same physical location simultaneously. The essential components of memcomputing are passive devices with memory functionality, such as memristor, memcapacitor, and meminductor. We report the realization of a Schottky contact memcapacitor compatible with the current Si CMOS technology. Our memcapacitor is formed by depositing a stack of metal and oxide thin films on top of a Schottky contact. Here, the metal electrode of the Schottky contact is floating. The working principle of our memcapacitor is based on the fact that the depletion width of the Schottky contact varies according to the amount of charge stored in the floating metal electrode. The voltage pulse applied across the Metal/Oxide/Floating-Schottky junction controls charge flow in the Schottky contact and determines the amount of charge stored eventually. It is demonstrated experimentally that our memcapacitor exhibits hysteresis behaviors in capacitance-voltage curves and possesses multiple capacitance values that are switchable by the applied voltage pulse. Supported by NRF in South Korea (2013R1A1A2007070).

Method of forming and assembly of parts

DOEpatents

Ripley, Edward B.

2010-12-28

A method of assembling two or more parts together that may be metal, ceramic, metal and ceramic parts, or parts that have different CTE. Individual parts are formed and sintered from particles that leave a network of interconnecting porosity in each sintered part. The separate parts are assembled together and then a fill material is infiltrated into the assembled, sintered parts using a method such as capillary action, gravity, and/or pressure. The assembly is then cured to yield a bonded and fully or near-fully dense part that has the desired physical and mechanical properties for the part's intended purpose. Structural strength may be added to the parts by the inclusion of fibrous materials.

Method for making a monolithic integrated high-T.sub.c superconductor-semiconductor structure

NASA Technical Reports Server (NTRS)

Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Russell, Stephen D. (Inventor); Garcia, Graham A. (Inventor); Barfknecht, Andrew T. (Inventor); Clayton, Stanley R. (Inventor)

2000-01-01

A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV).

PubMed

Shen, Wen-Wei; Chen, Kuan-Neng

2017-12-01

3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.

Structures and Techniques For Implementing and Packaging Complex, Large Scale Microelectromechanical Systems Using Foundry Fabrication Processes.

DTIC Science & Technology

1996-06-01

switches 5-43 Figure 5-27. Mechanical interference between ’Pull Spring’ devices 5-45 Figure 5-28. Array of LIGA mechanical relay switches 5-49...like coating DM Direct metal interconnect technique DMD ™ Digital Micromirror Device EDP Ethylene, diamine, pyrocatechol and water; silicon anisotropic...mechanical systems MOSIS MOS Implementation Service PGA Pin grid array, an electronic die package PZT Lead-zirconate-titanate LIGA Lithographie

Semiconductor/High-Tc-Superconductor Hybrid ICs

NASA Technical Reports Server (NTRS)

Burns, Michael J.

1995-01-01

Hybrid integrated circuits (ICs) containing both Si-based semiconducting and YBa(2)Cu(3)O(7-x) superconducting circuit elements on sapphire substrates developed. Help to prevent diffusion of Cu from superconductors into semiconductors. These hybrid ICs combine superconducting and semiconducting features unavailable in superconducting or semiconducting circuitry alone. For example, complementary metal oxide/semiconductor (CMOS) readout and memory devices integrated with fast-switching Josephson-junction super-conducting logic devices and zero-resistance interconnections.

A holistic view of crystalline silicon module reliability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanoka, J.I.

1995-11-01

Several aspects of module reliability are discussed, particularly with reference to the encapsulant and its interaction with the metallization and interconnection of a module. A need to look at the module as a whole single unit is stressed. Also, the issue of a slight light degradation effect in crystalline silicon cells is discussed. A model for this is mentioned and it may well be that polycrystalline cells with dislocations may have an advantage.

Atomistic investigation of the structural, transport, and mechanical properties of Cu-Zr metallic glasses

NASA Astrophysics Data System (ADS)

Kumar, Mohit

The unique set of mechanical and magnetic properties possessed by metallic glasses has attracted a lot of recent scientific and technological interest. The development of new metallic glass alloys with improved manufacturability, enhanced properties and higher ductility relies on the fundamental understanding of the interconnections between their atomic structure, glass forming ability (GFA), transport properties, and elastic and plastic deformation mechanisms. This thesis is focused on finding these atomic structure-property relationships in Cu-Zr BMGs using molecular dynamics simulations. In the first study described herein, molecular dynamics simulations of the rapid solidification process over the Cu-Zr compositional domain were conducted to explore inter-dependencies of atomic transport and fragility, elasticity and structural ordering, and GFA. The second study investigated the atomic origins of serration events, which is the characteristic plastic deformation behaviour in BMGs. The combined results of this work suggest that GFA and ductility of metallic glasses could be compositionally tuned.

Iodine doped carbon nanotube cables exceeding specific electrical conductivity of metals

PubMed Central

Zhao, Yao; Wei, Jinquan; Vajtai, Robert; Ajayan, Pulickel M.; Barrera, Enrique V.

2011-01-01

Creating highly electrically conducting cables from macroscopic aggregates of carbon nanotubes, to replace metallic wires, is still a dream. Here we report the fabrication of iodine-doped, double-walled nanotube cables having electrical resistivity reaching ∼10−7 Ω.m. Due to the low density, their specific conductivity (conductivity/weight) is higher than copper and aluminum and is only just below that of the highest specific conductivity metal, sodium. The cables exhibit high current-carrying capacity of 104∼105 A/cm2 and can be joined together into arbitrary length and diameter, without degradation of their electrical properties. The application of such nanotube cables is demonstrated by partly replacing metal wires in a household light bulb circuit. The conductivity variation as a function of temperature for the cables is five times smaller than that for copper. The high conductivity nanotube cables could find a range of applications, from low dimensional interconnects to transmission lines. PMID:22355602

Ion implantation enhanced metal-Si-metal photodetectors

NASA Astrophysics Data System (ADS)

Sharma, A. K.; Scott, K. A. M.; Brueck, S. R. J.; Zolper, J. C.; Myers, D. R.

1994-05-01

The quantum efficiency and frequency response of simple Ni-Si-Ni metal-semiconductor-metal (MSM) photodetectors at long wavelengths are significantly enhanced with a simple, ion-implantation step to create a highly absorbing region approx. 1 micron below the Si surface. The internal quantum efficiency is improved by a factor of approx. 3 at 860 nm (to 64%) and a full factor of ten at 1.06 microns (to 23%) as compared with otherwise identical unimplanted devices. Dark currents are only slightly affected by the implantation process and are as low as 630 pA for a 4.5-micron gap device at 10-V bias. Dramatic improvement in the impulse response is observed, 100 ps vs. 600 ps, also at 10-V bias and 4.5-micron gap, due to the elimination of carrier diffusion tails in the implanted devices. Due to its planar structure, this device is fully VLSI compatible. Potential applications include optical interconnections for local area networks and multi-chip modules.

Using negative emotions to trace the experience of borderline personality pathology: Interconnected relationships revealed in an experience sampling study

PubMed Central

Law, Mary Kate; Fleeson, William; Arnold, Elizabeth Mayfield; Furr, R. Michael

2015-01-01

While emotional difficulties are highly implicated in borderline personality disorder (BPD), the dynamic relationships between emotions and BPD symptoms that occur in everyday life are unknown. The current paper examined the function of negative emotions as they relate to BPD symptoms in real time. Experience sampling methodology with 281 participants measured negative emotions and borderline symptoms, expressed as a spectrum of experiences, five times daily for two weeks. Overall, having a BDP diagnosis was associated with experiencing more negative emotions. Multilevel modeling supported positive concurrent relationships between negative emotions and BPD symptoms. Lagged models showed that even after three hours negative emotions and several symptoms continued to influence each other. Therefore, results indicated that negative emotions and BPD symptoms are intricately related; some evidenced long-lasting relationships. This research supports emotion-symptom contingencies within BPD and provides insight regarding the reactivity and functionality of negative emotions in borderline pathology. PMID:25710731

Using Negative Emotions to Trace the Experience of Borderline Personality Pathology: Interconnected Relationships Revealed in an Experience Sampling Study.

PubMed

Law, Mary Kate; Fleeson, William; Arnold, Elizabeth Mayfield; Furr, R Michael

2016-02-01

While emotional difficulties are highly implicated in borderline personality disorder (BPD), the dynamic relationships between emotions and BPD symptoms that occur in everyday life are unknown. The current paper examined the function of negative emotions as they relate to BPD symptoms in real time. Experience sampling methodology with 281 participants measured negative emotions and borderline symptoms, expressed as a spectrum of experiences, five times daily for two weeks. Overall, having a BDP diagnosis was associated with experiencing more negative emotions. Multilevel modeling supported positive concurrent relationships between negative emotions and BPD symptoms. Lagged models showed that even after 3 hours negative emotions and several symptoms continued to influence each other. Therefore, results indicated that negative emotions and BPD symptoms are intricately related; some evidenced long-lasting relationships. This research supports emotion-symptom contingencies within BPD and provides insight regarding the reactivity and functionality of negative emotions in borderline pathology.

The Influence of MHC and Immunoglobulins A and E on Host Resistance to Gastrointestinal Nematodes in Sheep

PubMed Central

Lee, C. Y.; Munyard, K. A.; Gregg, K.; Wetherall, J. D.; Stear, M. J.; Groth, D. M.

2011-01-01

Gastrointestinal nematode parasites in farmed animals are of particular importance due to their effects on production. In Australia, it is estimated that the direct and indirect effects of parasite infestation cost the animal production industries hundreds of millions of dollars each year. The main factors considered by immunologists when studying gastrointestinal nematode infections are the effects the host's response has on the parasite, which immunological components are responsible for these effects, genetic factors involved in controlling immunological responses, and the interactions between these forming an interconnecting multilevel relationship. In this paper, we describe the roles of immunoglobulins, in particular IgA and IgE, and the major histocompatibility complex in resistance to gastrointestinal parasites in sheep. We also draw evidence from other animal models to support the involvement of these immune components. Finally, we examine how IgA and IgE exert their influence and how methods may be developed to manage susceptible animals. PMID:21584228

Electrochemical characterization of bulk and thin film copper in ammonia- and nitric acid-based slurries for chemical mechanical planarization of interconnects

NASA Astrophysics Data System (ADS)

Sainio, Carlyn Anne

Copper will be replacing aluminum as the interconnect material in silicon integrated circuits. Chemical mechanical planarization (CMP) in combination with an inlaid metal interconnection scheme has been utilized to pattern copper interconnects. The thesis describes an attempt to understand the electrochemistry of copper in slurries used for CMP. Steady-state electrochemical potential measurements, linear polarization resistance determinations, and potentiodynamic and potentiostatic polarization scans have been used in order to characterize the mechanism by which copper is removed during CMP. Electrochemical measurements were implemented on a rotating disk assembly to simulate conditions during CMP. Experiments were performed on both bulk copper samples and blanket copper thin films sputter deposited onto silicon wafers. Electrochemical potential measurements have been used in conjunction with potential-pH diagrams to determine the possible copper species which are stable during CMP. Electrochemical results were correlated to CMP experiments to determine slurry compositions with optimum potential-pH ranges for copper planarization. The results indicate that such studies present an opportunity to isolate the electrochemical and chemical effects from the mechanical effects in the CMP of metals and to determine the dependencies of each of these effects on the other. CMP of copper was controlled by the removal of native or non-native surface films. High CMP rates were achieved by matching the rates of film formation and copper and film dissolution. During CMP, surface films are abraded, allowing increased dissolution of copper until the surface film reforms. When the surface was indented by abrasive particles, the corrosion rate of the exposed copper increased by two orders of magnitude. Etchants (i.e. ammonia or nitric acid) were necessary for high CMP rates (120-240 nm/min) and to minimize scratching. CMP rates of copper in 1 volume percent NHsb4OH and 0.7 volume percent HNOsb3 with 0.0016 weight percent KMnOsb4 were comparable. Electrochemical characterization can narrow the possible slurry compositions that may be used for polishing. Also, the possibility of implementing electrochemical techniques to detect the endpoint of polishing was investigated. Although electrochemical measurements in ammonia-based slurries did not indicate when tantalum was exposed, similar measurements may be used to determine when polishing pads should be replaced.

Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics

NASA Astrophysics Data System (ADS)

Fang, Nan; Nagashio, Kosuke; Toriumi, Akira

2017-03-01

Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancies formed in MoS2, however, will potentially make devices unstable and problematic. Random telegraphic signals (RTSs) have often been studied in small area Si metal-oxide-semiconductor field-effect transistors (MOSFETs) to identify the carrier capture and emission processes at defects. In this paper, we have systemically analyzed RTSs observed in atomically thin layer MoS2 FETs. Several types of RTSs have been analyzed. One is the simple on/off type of telegraphic signals, the second is multilevel telegraphic signals with a superposition of the simple signals, and the third is multilevel telegraphic signals that are correlated with each other. The last one is discussed from the viewpoint of the defect-defect interaction in MoS2 FETs with a weak screening in atomically confined two-dimensional electron-gas systems. Furthermore, the position of defects causing RTSs has also been investigated by preparing MoS2 FETs with multi-probes. The electron beam was locally irradiated to intentionally generate defects in the MoS2 channel. It is clearly demonstrated that the MoS2 channel is one of the RTS origins. RTS analysis enables us to analyze the defect dynamics of TMD devices.

The Development of an IMU Integrated Clothes for Postural Monitoring Using Conductive Yarn and Interconnecting Technology.

PubMed

Kang, Sung-Won; Choi, Hyeob; Park, Hyung-Il; Choi, Byoung-Gun; Im, Hyobin; Shin, Dongjun; Jung, Young-Giu; Lee, Jun-Young; Park, Hong-Won; Park, Sukyung; Roh, Jung-Sim

2017-11-07

Spinal disease is a common yet important condition that occurs because of inappropriate posture. Prevention could be achieved by continuous posture monitoring, but most measurement systems cannot be used in daily life due to factors such as burdensome wires and large sensing modules. To improve upon these weaknesses, we developed comfortable "smart wear" for posture measurement using conductive yarn for circuit patterning and a flexible printed circuit board (FPCB) for interconnections. The conductive yarn was made by twisting polyester yarn and metal filaments, and the resistance per unit length was about 0.05 Ω/cm. An embroidered circuit was made using the conductive yarn, which showed increased yield strength and uniform electrical resistance per unit length. Circuit networks of sensors and FPCBs for interconnection were integrated into clothes using a computer numerical control (CNC) embroidery process. The system was calibrated and verified by comparing the values measured by the smart wear with those measured by a motion capture camera system. Six subjects performed fixed movements and free computer work, and, with this system, we were able to measure the anterior/posterior direction tilt angle with an error of less than 4°. The smart wear does not have excessive wires, and its structure will be optimized for better posture estimation in a later study.

Nanoscale soldering of axially positioned single-walled carbon nanotubes: a molecular dynamics simulation study.

PubMed

Cui, Jianlei; Yang, Lijun; Zhou, Liang; Wang, Yang

2014-02-12

The miniaturization of electronics devices into the nanometer scale is indispensable for next-generation semi-conductor technology. Carbon nanotubes (CNTs) are considered to be the promising candidates for future interconnection wires. To study the carbon nanotubes interconnection during nanosoldering, the melting process of nanosolder and nanosoldering process between single-walled carbon nanotubes are simulated with molecular dynamics method. As the simulation results, the melting point of 2 nm silver solder is about 605 K because of high surface energy, which is below the melting temperature of Ag bulk material. In the nanosoldering process simulations, Ag atoms may be dragged into the nanotubes to form different connection configuration, which has no apparent relationship with chirality of SWNTs. The length of core filling nanowires structure has the relationship with the diameter, and it does not become longer with the increasing diameter of SWNT. Subsequently, the dominant mechanism of was analyzed. In addition, as the heating temperature and time, respectively, increases, more Ag atoms can enter the SWNTs with longer length of Ag nanowires. And because of the strong metal bonds, less Ag atoms can remain with the tight atomic structures in the gap between SWNT and SWNT. The preferred interconnection configurations can be achieved between SWNT and SWNT in this paper.

Quasi-ballistic Electronic Thermal Conduction in Metal Inverse Opals.

PubMed

Barako, Michael T; Sood, Aditya; Zhang, Chi; Wang, Junjie; Kodama, Takashi; Asheghi, Mehdi; Zheng, Xiaolin; Braun, Paul V; Goodson, Kenneth E

2016-04-13

Porous metals are used in interfacial transport applications that leverage the combination of electrical and/or thermal conductivity and the large available surface area. As nanomaterials push toward smaller pore sizes to increase the total surface area and reduce diffusion length scales, electron conduction within the metal scaffold becomes suppressed due to increased surface scattering. Here we observe the transition from diffusive to quasi-ballistic thermal conduction using metal inverse opals (IOs), which are metal films that contain a periodic arrangement of interconnected spherical pores. As the material dimensions are reduced from ∼230 nm to ∼23 nm, the thermal conductivity of copper IOs is reduced by more than 57% due to the increase in surface scattering. In contrast, nickel IOs exhibit diffusive-like conduction and have a constant thermal conductivity over this size regime. The quasi-ballistic nature of electron transport at these length scales is modeled considering the inverse opal geometry, surface scattering, and grain boundaries. Understanding the characteristics of electron conduction at the nanoscale is essential to minimizing the total resistance of porous metals for interfacial transport applications, such as the total electrical resistance of battery electrodes and the total thermal resistance of microscale heat exchangers.

Effect of restricted geometry on the superconducting properties of low-melting metals (Review Article)

NASA Astrophysics Data System (ADS)

Kumzerov, Yu. A.; Naberezhnov, A. A.

2016-11-01

This is a review of results from studies of the effect of artificially restricted geometry (the size effect) on the superconducting properties of nanoparticles of low-melting metals (Hg, Pb, Sn, In). Restricted geometrical conditions are created by embedding molten metals under high pressure into nanoporous matrices of two types: channel structures based on chrysotile asbestos and porous alkali-borosilicate glasses. Chrysotile asbestos is a system of parallel nanotubes with channel diameters ranging from 2 to 20 nm and an aspect ratio (channel length to diameter) of up to 107. The glasses are a random dendritic three-dimensional system of interconnected channels with a technologically controllable mean diameter of 2-30 nm. Temperature dependences of the resistance and heat capacity in the region of the superconducting transition and the dependences of the critical temperature on the mean pore diameter are obtained. The critical magnetic fields are also determined.

Thermoelectric microdevice fabricated by a MEMS-like electrochemical process

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey; Lim, James R.; Huang, Chen-Kuo; Fleurial, Jean-Pierre

2003-01-01

Microelectromechanical systems (MEMS) are the basis of many rapidly growing technologies, because they combine miniature sensors and actuators with communications and electronics at low cost. Commercial MEMS fabrication processes are limited to silicon-based materials or two-dimensional structures. Here we show an inexpensive, electrochemical technique to build MEMS-like structures that contain several different metals and semiconductors with three-dimensional bridging structures. We demonstrate this technique by building a working microthermoelectric device. Using repeated exposure and development of multiple photoresist layers, several different metals and thermoelectric materials are fabricated in a three-dimensional structure. A device containing 126 n-type and p-type (Bi, Sb)2Te3 thermoelectric elements, 20 microm tall and 60 microm in diameter with bridging metal interconnects, was fabricated and cooling demonstrated. Such a device should be of technological importance for precise thermal control when operating as a cooler, and for portable power when operating as a micro power generator.

Nanotwinned metal MEMS films with unprecedented strength and stability

PubMed Central

Sim, Gi-Dong; Krogstad, Jessica A.; Reddy, K. Madhav; Xie, Kelvin Y.; Valentino, Gianna M.; Weihs, Timothy P.; Hemker, Kevin J.

2017-01-01

Silicon-based microelectromechanical systems (MEMS) sensors have become ubiquitous in consumer-based products, but realization of an interconnected network of MEMS devices that allows components to be remotely monitored and controlled, a concept often described as the “Internet of Things,” will require a suite of MEMS materials and properties that are not currently available. We report on the synthesis of metallic nickel-molybdenum-tungsten films with direct current sputter deposition, which results in fully dense crystallographically textured films that are filled with nanotwins. These films exhibit linear elastic mechanical behavior and tensile strengths exceeding 3 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultrahigh strength is attributed to a combination of solid solution strengthening and the presence of dense nanotwins. These films also have excellent thermal and mechanical stability, high density, and electrical properties that are attractive for next-generation metal MEMS applications. PMID:28782015

Controlling the length scale and distribution of the ductile phase in metallic glass composites through friction stir processing

PubMed Central

Arora, Harpreet Singh; Mridha, Sanghita; Grewal, Harpreet Singh; Singh, Harpreet; Hofmann, Douglas C; Mukherjee, Sundeep

2014-01-01

We demonstrate the refinement and uniform distribution of the crystalline dendritic phase by friction stir processing (FSP) of titanium based in situ ductile-phase reinforced metallic glass composite. The average size of the dendrites was reduced by almost a factor of five (from 24 μm to 5 μm) for the highest tool rotational speed of 900 rpm. The large inter-connected dendrites become more fragmented with increased circularity after processing. The changes in thermal characteristics were measured by differential scanning calorimetry. The reduction in crystallization enthalpy after processing suggests partial devitrification due to the high strain plastic deformation. FSP resulted in increased hardness and modulus for both the amorphous matrix and the crystalline phase. This is explained by interaction of shear bands in amorphous matrix with the strain-hardened dendritic phase. Our approach offers a new strategy for microstructural design in metallic glass composites. PMID:27877687

Controlling the length scale and distribution of the ductile phase in metallic glass composites through friction stir processing.

PubMed

Arora, Harpreet Singh; Mridha, Sanghita; Grewal, Harpreet Singh; Singh, Harpreet; Hofmann, Douglas C; Mukherjee, Sundeep

2014-06-01

We demonstrate the refinement and uniform distribution of the crystalline dendritic phase by friction stir processing (FSP) of titanium based in situ ductile-phase reinforced metallic glass composite. The average size of the dendrites was reduced by almost a factor of five (from 24 μ m to 5 μ m) for the highest tool rotational speed of 900 rpm. The large inter-connected dendrites become more fragmented with increased circularity after processing. The changes in thermal characteristics were measured by differential scanning calorimetry. The reduction in crystallization enthalpy after processing suggests partial devitrification due to the high strain plastic deformation. FSP resulted in increased hardness and modulus for both the amorphous matrix and the crystalline phase. This is explained by interaction of shear bands in amorphous matrix with the strain-hardened dendritic phase. Our approach offers a new strategy for microstructural design in metallic glass composites.

Small-Scale Metal Tanks for High Pressure Storage of Fluids

NASA Technical Reports Server (NTRS)

London, Adam (Inventor)

2016-01-01

Small scale metal tanks for high-pressure storage of fluids having tank factors of more than 5000 meters and volumes of ten cubic inches or less featuring arrays of interconnected internal chambers having at least inner walls thinner than gage limitations allow. The chambers may be arranged as multiple internal independent vessels. Walls of chambers that are also portions of external tank walls may be arcuate on the internal and/or external surfaces, including domed. The tanks may be shaped adaptively and/or conformally to an application, including, for example, having one or more flat outer walls and/or having an annular shape. The tanks may have dual-purpose inlet/outlet conduits of may have separate inlet and outlet conduits. The tanks are made by fusion bonding etched metal foil layers patterned from slices of a CAD model of the tank. The fusion bonded foil stack may be further machined.

Silicon nanowire photodetectors made by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Xu, Ying; Ni, Chuan; Sarangan, Andrew

2016-09-01

Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

Three Dimensional Integration and On-Wafer Packaging for Heterogeneous Wafer-Scale Circuit Architectures

DTIC Science & Technology

2006-11-01

Chip Level CMOS Chip High resistivity Si Metal Interconnect 25μm 24GHz fully integrated receiver CMOS transimpedance Amplifier (13GHz BW, 52dBΩ...power of a high-resistivity SiGe power amplifier chip with the wide operating frequency range and compactness of a CMOS mixed signal chip operating...With good RF channel selectivity, system specifications such as the linearity of the low noise amplifier (LNA), the phase noise of the voltage

Technology Description Sheets form the AMC 1990 Technology Expo Held in Aberdeen Proving Ground, Maryland on 1-4 October 1990

DTIC Science & Technology

1990-10-04

emission signals) " Compactness (can be hand-held). The ISOPADS was demonstrated to troop units at the Army Training Command, Grafenwoehr , West...To be controlled, the microwave chips and modules must be interconnected with remotely located components and subsystems. Utilizing metallic cables...forward observer systcm being developed for use in situations too dangerous for soldiers. such as nuclear- contaminated areas or in support of a minefield

A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT device

NASA Technical Reports Server (NTRS)

Young, Paul G.; Romanofsky, Robert R.; Alterovitz, Samuel A.; Mena, Rafael A.; Smith, Edwyn D.

1993-01-01

A process to integrate epitaxial lift-off devices and microstrip circuits has been demonstrated using a pseudomorphic HEMT on an alumina substrate. The circuit was a 10 GHz amplifier with the interconnection between the device and the microstrip circuit being made with photolithographically patterned metal. The measured and modeled response correlated extremely well with a maximum gain of 6.8 dB and a return loss of -14 dB at 10.4 GHz.

Screen-printed (La,Sr)CrO3 coatings on ferritic stainless steel interconnects for solid oxide fuel cells using nanopowders prepared by means of ultrasonic spray pyrolysis

NASA Astrophysics Data System (ADS)

Brylewski, Tomasz; Dabek, Jaroslaw; Przybylski, Kazimierz; Morgiel, Jerzy; Rekas, Mieczyslaw

2012-06-01

In order to protect the cathode from chromium poisoning and improve electrical resistance, a perovskite (La,Sr)CrO3 coating was deposited on the surface of a DIN 50049 ferritic stainless steel by means of the screen-printing method, using a paste composed of an ultra-fine powder prepared via ultrasonic spray pyrolysis. Investigations of the oxidation process of the coated steel in air and the Ar-H2-H2O gas mixture at 1073 K for times up to 820 h showed high compactness of the protective film, good adhesion to the metal substrate, as well as area specific resistance (ASR) at a level acceptable for metallic SOFC interconnect materials. The microstructure, nanostructure, phase composition of the thick film, and in particular the film/substrate interface, were examined via chemical analyses by means of SEM-EDS and TEM-SAD. It was shown that the (La,Sr)CrO3 coating interacts with the steel during long-term thermal oxidation in the afore-mentioned conditions and intermediate, chromia-rich and/or spinel multilayer interfacial zones are formed. Cr-vaporization tests showed that the (La,Sr)CrO3 coating may play the role of barriers that decrease the volatilization rate of chromia species.

2 Gbit/s 0.5 μm complementary metal-oxide semiconductor optical transceiver with event-driven dynamic power-on capability

NASA Astrophysics Data System (ADS)

Wang, Xingle; Kiamilev, Fouad; Gui, Ping; Wang, Xiaoqing; Ekman, Jeremy; Zuo, Yongrong; Blankenberg, Jason; Haney, Michael

2006-06-01

A 2 Gb/s0.5 μm complementary metal-oxide semiconductor optical transceiver designed for board- or backplane level power-efficient interconnections is presented. The transceiver supports optical wake-on-link (OWL), an event-driven dynamic power-on technique. Depending on external events, the transceiver resides in either the active mode or the sleep mode and switches accordingly. The active-to-sleep transition shuts off the normal, gigabit link and turns on dedicated circuits to establish a low-power (~1.8 mW), low data rate (less than 100 Mbits/s) link. In contrast the normal, gigabit link consumes over 100 mW. Similarly the sleep-to-active transition shuts off the low-power link and turns on the normal, gigabit link. The low-power link, sharing the same optical channel with the normal, gigabit link, is used to achieve transmitter/receiver pair power-on synchronization and greatly reduces the power consumption of the transceiver. A free-space optical platform was built to evaluate the transceiver performance. The experiment successfully demonstrated the event-driven dynamic power-on operation. To our knowledge, this is the first time a dynamic power-on scheme has been implemented for optical interconnects. The areas of the circuits that implement the low-power link are approximately one-tenth of the areas of the gigabit link circuits.

Chip-to-chip optical link by using optical wiring method

NASA Astrophysics Data System (ADS)

Cho, In-Kui; Ahn, Seoung Ho; Jeong, Myung-Yung; Rho, Byung Sup; Park, Hyo Hoon

2008-01-01

A practical optical link system was prepared with a transmitter (Tx) and receiver (Rx). The optical TRx module consisted of a metal optical bench, a module printed circuit board (PCB), a driver/receiver IC, a VCSEL/PD array, and an optical link block composed of plastic optical fiber (POF). For the optical interconnection between the light-sources and detectors, an optical wiring method has been proposed to enable easy assembly. This paper provides a method for optical interconnection between an optical Tx and an optical Rx, comprising the following steps: (a) forming a light source device, an optical detection device, and an optical transmission unit on a substrate (metal optical bench (MOB)); (b) preparing a flexible optical transmission-connection medium (optical wiring link) to optically connect the light source device formed on the substrate with the optical detection device; and (c) directly connecting one end of the surface-finished optical transmission connection medium with the light source device and the other end with the optical detection device. A chip-to-chip optical link system constructed with TRx modules was fabricated and the optical characteristics were measured. The results clearly demonstrate that the use of an optical wiring method can provide robust and cost-effective assembly for vertical-cavity surface-emitting lasers (VCSELs) and photodiodes (PDs). We successfully achieved a 5 Gb/s data transmission rate with this optical link.

Geometry-based across wafer process control in a dual damascene scenario

NASA Astrophysics Data System (ADS)

Krause, Gerd; Hofmann, Detlef; Habets, Boris; Buhl, Stefan; Gutsch, Manuela; Lopez-Gomez, Alberto; Thrun, Xaver

2018-03-01

Dual damascene is an established patterning process for back-end-of-line to generate copper interconnects and lines. One of the critical output parameters is the electrical resistance of the metal lines. In our 200 mm line, this is currently being controlled by a feed-forward control from the etch process to the final step in the CMP process. In this paper, we investigate the impact of alternative feed-forward control using a calibrated physical model that estimates the impact on electrical resistance of the metal lines* . This is done by simulation on a large set of wafers. Three different approaches are evaluated, one of which uses different feed-forward settings for different radial zones in the CMP process.

Structure, photoluminescent properties and photocatalytic activities of a new Cd(II) metal-organic framework.

PubMed

Zhang, Cheng Yan; Ma, Wei Xing; Wang, Ming Yan; Yang, Xu Jie; Xu, Xing You

2014-01-24

A new metal-organic framework, [Cd(TDC)(bix)(H2O)]n (H2TDC = thiophene-2,5-dicarboxylic acid; bix = 1,4-bis(imidazol-1-ylmethyl)benzene), has been synthesized under hydrothermal conditions and structurally characterized by elemental analysis, infrared spectroscopy, thermogravimetric analysis, UV-vis and single X-ray diffraction. Cd-MOF is a 2D infinite layer framework, which is further interconnected by hydrogen-bond interactions leading to a 3D supramolecular architecture. The photoluminescent properties of the Cd-MOF were investigated and this compound shows intense fluorescent emissions in the solid state. In addition, it exhibits good photocatalytic activities for the degradation of methyl organic under UV light irradiation. Copyright © 2013 Elsevier B.V. All rights reserved.

Temperature rise and flow of Zr-based bulk metallic glasses under high shearing stress

NASA Astrophysics Data System (ADS)

Zhang, Weiguo; Ma, Mingzhen; Song, Aijun; Liang, Shunxing; Hao, Qiuhong; Tan, Chunlin; Jing, Qin; Liu, Riping

2011-11-01

Deformation of the bulk metallic glasses (BMGs) and the creation and propagation of the shear bands are closely interconnected. Shearing force was loaded on Zr41.2Ti13.8Cu12.5Ni10.0Be22.5(Vit.1) BMGs by cutting during the turning of the BMG rod. The temperature rise of alloy on the shear bands was calculated and the result showed that it could reach the temperature of the super-cooled liquid zone or exceed the melting point. The temperature rise caused viscous fluid flow and brought about the deformation of BMGs. This suggested that the deformation of BMGs was derived, at least to some extent, from the adiabatic shear temperature rise.

Solid oxide fuel cells, and air electrode and electrical interconnection materials therefor

DOEpatents

Bates, J. Lambert

1992-01-01

In one aspect of the invention, an air electrode material for a solid oxide fuel cell comprises Y.sub.1-a Q.sub.a MnO.sub.3, where "Q" is selected from the group consisting of Ca and Sr or mixtures thereof and "a" is from 0.1 to 0.8. Preferably, "a" is from 0.4 to 0.7. In another aspect of the invention, an electrical interconnection material for a solid oxide fuel cell comprises Y.sub.1-b Ca.sub.b Cr.sub.1-c Al.sub.c O.sub.3, where "b" is from 0.1 to 0.6 and "c" is from 0 to 9.3. Preferably, "b" is from 0.3 to 0.5 and "c" is from 0.05 to 0.1. A composite solid oxide electrochemical fuel cell incorporating these materials comprises: a solid oxide air electrode and an adjacent solid oxide electrical interconnection which commonly include the cation Y, the air electrode comprising Y.sub.1-a Q.sub.a MnO.sub.3, where "Q" is selected from the group consisting of Ca and Sr or mixtures thereof and "a" is from 0.1 to 0.8, the electrical interconnection comprising Y.sub.1-b Ca.sub.b Cr.sub.1-c Al.sub.c O.sub.3, where "b" is from 0.1 to 0.6 and "c" is from 0.0 to 0.3; a yttrium stabilized solid electrolyte comprising (1-d)ZrO.sub.2 -(d)Y.sub.2 O.sub.3 where "d" is from 0.06 to 0.5; and a solid fuel electrode comprising X-ZrO.sub.2, where "X" is an elemental metal.

Solid oxide fuel cells, and air electrode and electrical interconnection materials therefor

DOEpatents

Bates, J.L.

1992-09-01

In one aspect of the invention, an air electrode material for a solid oxide fuel cell comprises Y[sub 1[minus]a]Q[sub a]MnO[sub 3], where Q is selected from the group consisting of Ca and Sr or mixtures thereof and a' is from 0.1 to 0.8. Preferably, a' is from 0.4 to 0.7. In another aspect of the invention, an electrical interconnection material for a solid oxide fuel cell comprises Y[sub 1[minus]b]Ca[sub b]Cr[sub 1[minus]c]Al[sub c]O[sub 3], where b' is from 0.1 to 0.6 and c' is from 0 to 9.3. Preferably, b' is from 0.3 to 0.5 and c' is from 0.05 to 0.1. A composite solid oxide electrochemical fuel cell incorporating these materials comprises: a solid oxide air electrode and an adjacent solid oxide electrical interconnection which commonly include the cation Y, the air electrode comprising Y[sub 1[minus]a]Q[sub a]MnO[sub 3], where Q is selected from the group consisting of Ca and Sr or mixtures thereof and a' is from 0.1 to 0.8, the electrical interconnection comprising Y[sub 1[minus]b]Ca[sub b]Cr[sub 1[minus]c]Al[sub c]O[sub 3], where b' is from 0.1 to 0.6 and c' is from 0.0 to 0.3; a yttrium stabilized solid electrolyte comprising (1[minus]d)ZrO[sub 2]-(d)Y[sub 2]O[sub 3] where d' is from 0.06 to 0.5; and a solid fuel electrode comprising X-ZrO[sub 2], where X' is an elemental metal. 5 figs.

Model-based approach for design verification and co-optimization of catastrophic and parametric-related defects due to systematic manufacturing variations

NASA Astrophysics Data System (ADS)

Perry, Dan; Nakamoto, Mark; Verghese, Nishath; Hurat, Philippe; Rouse, Rich

2007-03-01

Model-based hotspot detection and silicon-aware parametric analysis help designers optimize their chips for yield, area and performance without the high cost of applying foundries' recommended design rules. This set of DFM/ recommended rules is primarily litho-driven, but cannot guarantee a manufacturable design without imposing overly restrictive design requirements. This rule-based methodology of making design decisions based on idealized polygons that no longer represent what is on silicon needs to be replaced. Using model-based simulation of the lithography, OPC, RET and etch effects, followed by electrical evaluation of the resulting shapes, leads to a more realistic and accurate analysis. This analysis can be used to evaluate intelligent design trade-offs and identify potential failures due to systematic manufacturing defects during the design phase. The successful DFM design methodology consists of three parts: 1. Achieve a more aggressive layout through limited usage of litho-related recommended design rules. A 10% to 15% area reduction is achieved by using more aggressive design rules. DFM/recommended design rules are used only if there is no impact on cell size. 2. Identify and fix hotspots using a model-based layout printability checker. Model-based litho and etch simulation are done at the cell level to identify hotspots. Violations of recommended rules may cause additional hotspots, which are then fixed. The resulting design is ready for step 3. 3. Improve timing accuracy with a process-aware parametric analysis tool for transistors and interconnect. Contours of diffusion, poly and metal layers are used for parametric analysis. In this paper, we show the results of this physical and electrical DFM methodology at Qualcomm. We describe how Qualcomm was able to develop more aggressive cell designs that yielded a 10% to 15% area reduction using this methodology. Model-based shape simulation was employed during library development to validate architecture choices and to optimize cell layout. At the physical verification stage, the shape simulator was run at full-chip level to identify and fix residual hotspots on interconnect layers, on poly or metal 1 due to interaction between adjacent cells, or on metal 1 due to interaction between routing (via and via cover) and cell geometry. To determine an appropriate electrical DFM solution, Qualcomm developed an experiment to examine various electrical effects. After reporting the silicon results of this experiment, which showed sizeable delay variations due to lithography-related systematic effects, we also explain how contours of diffusion, poly and metal can be used for silicon-aware parametric analysis of transistors and interconnect at the cell-, block- and chip-level.

Stretchable and Soft Electronics using Liquid Metals.

PubMed

Dickey, Michael D

2017-07-01

The use of liquid metals based on gallium for soft and stretchable electronics is discussed. This emerging class of electronics is motivated, in part, by the new opportunities that arise from devices that have mechanical properties similar to those encountered in the human experience, such as skin, tissue, textiles, and clothing. These types of electronics (e.g., wearable or implantable electronics, sensors for soft robotics, e-skin) must operate during deformation. Liquid metals are compelling materials for these applications because, in principle, they are infinitely deformable while retaining metallic conductivity. Liquid metals have been used for stretchable wires and interconnects, reconfigurable antennas, soft sensors, self-healing circuits, and conformal electrodes. In contrast to Hg, liquid metals based on gallium have low toxicity and essentially no vapor pressure and are therefore considered safe to handle. Whereas most liquids bead up to minimize surface energy, the presence of a surface oxide on these metals makes it possible to pattern them into useful shapes using a variety of techniques, including fluidic injection and 3D printing. In addition to forming excellent conductors, these metals can be used actively to form memory devices, sensors, and diodes that are completely built from soft materials. The properties of these materials, their applications within soft and stretchable electronics, and future opportunities and challenges are considered. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wüstite in the fusion crust of Almahata Sitta sulfide-metal assemblage MS-166: Evidence for oxygen in metallic melts

NASA Astrophysics Data System (ADS)

Horstmann, Marian; Humayun, Munir; Harries, Dennis; Langenhorst, Falko; Chabot, Nancy L.; Bischoff, Addi; Zolensky, Michael E.

2013-05-01

Meteorite fusion crusts form during the passage of a meteoroid through the Earth's atmosphere and are highly oxidized intergrowths as documented by the presence of e.g., oxides. The porous and irregular fusion crust surrounding the Almahata Sitta sulfide-metal assemblage MS-166 was found highly enriched in wüstite (Fe1-xO). Frictional heating of the outer portions of the assemblage caused partial melting of predominantly the Fe-sulfide and minor amounts of the outer Ni-rich portions of the originally zoned metal in MS-166. Along with melting significant amounts of oxygen were incorporated into the molten fusion crust and mainly FeS was oxidized and desulfurized to form wüstite. Considerable amounts of FeS were lost due to ablation, whereas the cores of the large metal grains appear largely unmelted leaving behind metal grains and surrounding wüstite-rich material (matte). Metal grains along with the surrounding matte typically form an often highly porous framework of globules interconnected with the matte. Although textures and chemical composition suggest that melting of Fe,Ni metal occurred only partially (Ni-rich rims), there is a trace elemental imprint of siderophile element partitioning influenced by oxygen in the metallic melt as indicated by the behavior of W and Ga, the two elements significantly affected by oxygen in a metallic melt. It is remarkable that MS-166 survived the atmospheric passage as troilite inclusions in iron meteorites are preferentially destroyed.

Structure for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

2009-01-01

A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

Nano-interconnection for microelectronics and polymers with benzo-triazole

NASA Technical Reports Server (NTRS)

Park, Yeonjoon; Choi, Sang H.; Noh, Hyunpil; Kuk, Young

2006-01-01

Benzo-Triazole (BTA) is considered as an important bridging material that can connect an organic polymer to the metal electrode on silicon wafers as a part of the microelectronics fabrication technology. We report a detailed process of surface induced 3-D polymerization of BTA on the Cu electrode material which was measured with the Ultraviolet Photoemission Spectroscopy (UPS), X-ray Photoemission Spectroscopy (XPS), and Scanning Tunneling Microscope (STM). The electric utilization of shield and chain polymerization of BTA on Cu surface is contemplated in this study.

Method of construction of a multi-cell solar array

NASA Technical Reports Server (NTRS)

Routh, D. E.; Hollis, B. R., Jr.; Feltner, W. R. (Inventor)

1979-01-01

The method of constructing a high voltage, low power, multicell solar array is described. A solar cell base region is formed in a substrate such as but not limited to silicon or sapphire. A protective coating is applied on the base and a patterned etching of the coating and base forms discrete base regions. A semiconductive junction and upper active region are formed in each base region, and defined by photolithography. Thus, discrete cells which are interconnected by metallic electrodes are formed.

Stretchable batteries with self-similar serpentine interconnects and integrated wireless recharging systems

NASA Astrophysics Data System (ADS)

Xu, Sheng; Zhang, Yihui; Cho, Jiung; Lee, Juhwan; Huang, Xian; Jia, Lin; Fan, Jonathan A.; Su, Yewang; Su, Jessica; Zhang, Huigang; Cheng, Huanyu; Lu, Bingwei; Yu, Cunjiang; Chuang, Chi; Kim, Tae-Il; Song, Taeseup; Shigeta, Kazuyo; Kang, Sen; Dagdeviren, Canan; Petrov, Ivan; Braun, Paul V.; Huang, Yonggang; Paik, Ungyu; Rogers, John A.

2013-02-01

An important trend in electronics involves the development of materials, mechanical designs and manufacturing strategies that enable the use of unconventional substrates, such as polymer films, metal foils, paper sheets or rubber slabs. The last possibility is particularly challenging because the systems must accommodate not only bending but also stretching. Although several approaches are available for the electronics, a persistent difficulty is in power supplies that have similar mechanical properties, to allow their co-integration with the electronics. Here we introduce a set of materials and design concepts for a rechargeable lithium ion battery technology that exploits thin, low modulus silicone elastomers as substrates, with a segmented design in the active materials, and unusual ‘self-similar’ interconnect structures between them. The result enables reversible levels of stretchability up to 300%, while maintaining capacity densities of ~1.1 mAh cm-2. Stretchable wireless power transmission systems provide the means to charge these types of batteries, without direct physical contact.

Mechanics analysis and design of fractal interconnects for stretchable batteries

NASA Astrophysics Data System (ADS)

Huang, Yonggang

2014-03-01

An important trend in electronics involves the development of materials, mechanical designs and manufacturing strategies that enable the use of unconventional substrates, such as polymer films, metal foils, paper sheets or rubber slabs. The last possibility is particularly challenging because the systems must accommodate not only bending but also stretching. Although several approaches are available for the electronics, a persistent difficulty is in power supplies that have similar mechanical properties, to allow their co-integration with the electronics. Here we introduce a set of materials and design concepts for a rechargeable lithium ion battery technology that exploits thin, low modulus silicone elastomers as substrates, with a segmented design in the active materials, and unusual ``self-similar'' interconnect structures between them. The result enables reversible levels of stretchability up to 300%, while maintaining capacity densities of ~1.1 mAh cm-2. Stretchable wireless power transmission systems provide the means to charge these types of batteries, without direct physical contact.

High temperature oxidation behavior of interconnect coated with LSCF and LSM for solid oxide fuel cell by screen printing

NASA Astrophysics Data System (ADS)

Lee, Shyong; Chu, Chun-Lin; Tsai, Ming-Jui; Lee, Jye

2010-01-01

The current study examined the effect of La 0.6Sr 0.4Co 0.2Fe 0.8O 3 (LSCF) and La 0.7Sr 0.3MnO 3 (LSM) coatings on the electrical properties and oxidation resistance of Crofer22 APU at 800 °C hot air. LSCF and LSM were coated on Crofer22 APU by screen printing and sintered over temperatures ranging from 1000 to 1100 °C in N 2. The coated alloy was first checked for compositions, morphology and interface conditions and then treated in a simulated oxidizing environment at 800 °C for 200 h. After measuring the long-term electrical resistance, the area specific resistance (ASR) at 800 °C for the alloy coated with LSCF was less than its counterpart coated with LSM. This work used LSCF coating as a metallic interconnect to reduce working temperature for the solid oxide fuel cell.

Phase Restructuring in Transition Metal Dichalcogenides for Highly Stable Energy Storage.

PubMed

Leng, Kai; Chen, Zhongxin; Zhao, Xiaoxu; Tang, Wei; Tian, Bingbing; Nai, Chang Tai; Zhou, Wu; Loh, Kian Ping

2016-09-28

Achieving homogeneous phase transition and uniform charge distribution is essential for good cycle stability and high capacity when phase conversion materials are used as electrodes. Herein, we show that chemical lithiation of bulk 2H-MoS 2 distorts its crystalline domains in three primary directions to produce mosaic-like 1T' nanocrystalline domains, which improve phase and charge uniformity during subsequent electrochemical phase conversion. 1T'-Li x MoS 2 , a macroscopic dense material with interconnected nanoscale grains, shows excellent cycle stability and rate capability in a lithium rechargeable battery compared to bulk or exfoliated-restacked MoS 2 . Transmission electron microscopy studies reveal that the interconnected MoS 2 nanocrystals created during the phase change process are reformable even after multiple cycles of galvanostatic charging/discharging, which allows them to play important roles in the long term cycling performance of the chemically intercalated TMD materials. These studies shed light on how bulk TMDs can be processed into quasi-2D nanophase material for stable energy storage.

Effects of fluoride residue on thermal stability in Cu/porous low-k interconnects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kobayashi, Y.; Ozaki, S.; Nakamura, T.

2014-06-19

We have investigated the effects of fluoride residue on the thermal stability of a Cu/barrier metal (BM)/porous low-k film (k < 2.3) structure. We confirmed that the Cu agglomerated more on a BM/inter layer dielectric (ILD) with a fluoride residue. To consider the effect of fluoride residue on Cu agglomeration, the structural state at the Cu/BM interface was evaluated with a cross-section transmission electron microscope (TEM) and atomic force microscope (AFM). In addition, the chemical bonding state at the Cu/BM interface was evaluated with the interface peeling-off method and X-ray photoelectron spectroscopy (XPS). Moreover, we confirmed the ionization of fluoridemore » residue and oxidation of Cu with fluoride and moisture to clarify the effect of fluoride residue on Cu. Our experimental results indicated that the thermal stability in Cu/porous low-k interconnects was degraded by enhancement of Cu oxidation with fluoride ions diffusion as an oxidizing catalyst.« less

The Chemical Modeling of Electronic Materials and Interconnections

NASA Astrophysics Data System (ADS)

Kivilahti, J. K.

2002-12-01

Thermodynamic and kinetic modeling, together with careful experimental work, is of great help for developing new electronic materials such as lead-free solders, their compatible metallizations and diffusion-barrier layers, as well as joining and bonding processes for advanced electronics manufacturing. When combined, these modeling techniques lead to a rationalization of the trial-and-error methods employed in the electronics industry, limiting experimentation and, thus, reducing significantly time-to-market of new products. This modeling provides useful information on the stabilities of phases (microstructures), driving forces for chemical reactions, and growth rates of reaction products occurring in interconnections or thin-film structures during processing, testing, and in longterm use of electronic devices. This is especially important when manufacturing advanced lead-free electronics where solder joint volumes are decreasing while the number of dissimilar reactive materials is increasing markedly. Therefore, a new concept of local nominal composition was introduced and applied together with the relevant ternary and multicomponent phase diagrams to some solder/conductor systems.

Stretchable batteries with self-similar serpentine interconnects and integrated wireless recharging systems.

PubMed

Xu, Sheng; Zhang, Yihui; Cho, Jiung; Lee, Juhwan; Huang, Xian; Jia, Lin; Fan, Jonathan A; Su, Yewang; Su, Jessica; Zhang, Huigang; Cheng, Huanyu; Lu, Bingwei; Yu, Cunjiang; Chuang, Chi; Kim, Tae-Il; Song, Taeseup; Shigeta, Kazuyo; Kang, Sen; Dagdeviren, Canan; Petrov, Ivan; Braun, Paul V; Huang, Yonggang; Paik, Ungyu; Rogers, John A

2013-01-01

An important trend in electronics involves the development of materials, mechanical designs and manufacturing strategies that enable the use of unconventional substrates, such as polymer films, metal foils, paper sheets or rubber slabs. The last possibility is particularly challenging because the systems must accommodate not only bending but also stretching. Although several approaches are available for the electronics, a persistent difficulty is in power supplies that have similar mechanical properties, to allow their co-integration with the electronics. Here we introduce a set of materials and design concepts for a rechargeable lithium ion battery technology that exploits thin, low modulus silicone elastomers as substrates, with a segmented design in the active materials, and unusual 'self-similar' interconnect structures between them. The result enables reversible levels of stretchability up to 300%, while maintaining capacity densities of ~1.1 mAh cm(-2). Stretchable wireless power transmission systems provide the means to charge these types of batteries, without direct physical contact.

A MoTe2 based light emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Heuck, M.; Grosso, G.; Furchi, M.; Cao, Y.; Zheng, J.; Navarro-Moratalla, E.; Zhou, L.; Taniguchi, T.; Watanabe, K.; Kong, J.; Englund, D.; Jarillo-Herrero, P.

A key challenge in photonics today is to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, partly because many components such as waveguides, interferometers and modulators, could be integrated on silicon-based processors. However, light sources and photodetectors present continued challenges. Common approaches for light source include off-chip or wafer-bonded lasers based on III-V materials, but studies show advantages for directly modulated light sources. The most advanced photodetectors in silicon photonics are based on germanium growth which increases system cost. The emerging two dimensional transition metal dichalcogenides (TMDs) offer a path for optical interconnects components that can be integrated with the CMOS processing by back-end-of-the-line processing steps. Here we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with infrared band gap. The state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Electromigration of intergranular voids in metal films for microelectronic interconnects

NASA Astrophysics Data System (ADS)

Averbuch, Amir; Israeli, Moshe; Ravve, Igor

2003-04-01

Voids and cracks often occur in the interconnect lines of microelectronic devices. They increase the resistance of the circuits and may even lead to a fatal failure. Voids may occur inside a single grain, but often they appear on the boundary between two grains. In this work, we model and analyze numerically the migration and evolution of an intergranular void subjected to surface diffusion forces and external voltage applied to the interconnect. The grain-void interface is considered one-dimensional, and the physical formulation of the electromigration and diffusion model results in two coupled fourth-order one-dimensional time-dependent PDEs. The boundary conditions are specified at the triple points, which are common to both neighboring grains and the void. The solution of these equations uses a finite difference scheme in space and a Runge-Kutta integration scheme in time, and is also coupled to the solution of a static Laplace equation describing the voltage distribution throughout the grain. Since the voltage distribution is required only along the interface line, the two-dimensional discretization of the grain interior is not needed, and the static problem is solved by the boundary element method at each time step. The motion of the intergranular void was studied for different ratios between the diffusion and the electric field forces, and for different initial configurations of the void.

Al-Si-Cu/TiN multilayer interconnection and Al-Ge reflow sputtering technologies for quarter-micron devices

NASA Astrophysics Data System (ADS)

Kikkawa, Takamaro; Kikuta, Kuniko

1993-05-01

Issues of interconnection technologies for quarter-micron devices are the reliability of metal lines with quarter-micron feature sizes and the formation of contact-hole-plugs with high aspect ratios. This paper describes a TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti multilayer conductor structure as a quarter-micron interconnection technology and aluminum-germanium (Al-Ge) reflow sputtering as a contact-hole filling technology. The TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti multilayer conductor structure could suppress stress-induced voiding and improve the electromigration mean-time to failure. These improvements are attributed to the fact that the grain boundaries for the Al-Si-Cu film and the interfaces between the Al-Si-Cu and the TiN films are strengthened by the rigid intermetallic compound, TiAl3. The Al-Ge alloy reflow sputtering is a candidate for contact- and via-hole filling technologies in terms of reducing fabrication costs. The Al-Ge reflow sputtering achieved low temperature contact hole filling at 300 degree(s)C. Contact holes with a diameter of 0.25 micrometers and aspect ratio of 4 could be filled. This is attributed to the low eutectic temperature for Al-Ge (424 degree(s)C) and the effect of thin polysilicon underlayer on the enhancement of Al-Ge reflow.

The Development of an IMU Integrated Clothes for Postural Monitoring Using Conductive Yarn and Interconnecting Technology

PubMed Central

Kang, Sung-Won; Park, Hyung-Il; Choi, Byoung-Gun; Shin, Dongjun; Jung, Young-Giu; Lee, Jun-Young; Park, Hong-Won; Park, Sukyung

2017-01-01

Spinal disease is a common yet important condition that occurs because of inappropriate posture. Prevention could be achieved by continuous posture monitoring, but most measurement systems cannot be used in daily life due to factors such as burdensome wires and large sensing modules. To improve upon these weaknesses, we developed comfortable “smart wear” for posture measurement using conductive yarn for circuit patterning and a flexible printed circuit board (FPCB) for interconnections. The conductive yarn was made by twisting polyester yarn and metal filaments, and the resistance per unit length was about 0.05 Ω/cm. An embroidered circuit was made using the conductive yarn, which showed increased yield strength and uniform electrical resistance per unit length. Circuit networks of sensors and FPCBs for interconnection were integrated into clothes using a computer numerical control (CNC) embroidery process. The system was calibrated and verified by comparing the values measured by the smart wear with those measured by a motion capture camera system. Six subjects performed fixed movements and free computer work, and, with this system, we were able to measure the anterior/posterior direction tilt angle with an error of less than 4°. The smart wear does not have excessive wires, and its structure will be optimized for better posture estimation in a later study. PMID:29112125

Chiral direction and interconnection of helical three-connected networks in metal-organic frameworks.

PubMed

Prior, T J; Rosseinsky, M J

2003-03-10

The control of the interpenetration and chirality of a family of metal-organic frameworks is discussed. These systems contain two- (A) and four-fold (B) interpenetration of helical three-connected networks generated by binding the 1,3,5-benzenetricarboxylate (btc) ligand to a metal center. These frameworks have the general formula Ni(3)(btc)(2)X(m)Y(n).solvent (where X = pyridine or 4-picoline, Y = ethylene glycol, 1,2-propanediol, 1,4-butanediol, meso-2,3-butanediol, 1,2,6-hexanetriol, glycerol). The structural and chemical effects of modifying the alcohol and aromatic amine ligands bound to the metal center include controlling the thermal stability and the degree of interpenetration. Covalent linking of the four interpenetrating networks in the A family and the switching of diol binding from mono- to bidentate are demonstrated. Recognition of chiral diols by the hand of the network helices is investigated by binding an alcohol ligand with two chiral centers of opposite sense to the same helix. This reveals the subtle nature of the helix-ligand interaction.

PAM4 silicon photonic microring resonator-based transceiver circuits

NASA Astrophysics Data System (ADS)

Palermo, Samuel; Yu, Kunzhi; Roshan-Zamir, Ashkan; Wang, Binhao; Li, Cheng; Seyedi, M. Ashkan; Fiorentino, Marco; Beausoleil, Raymond

2017-02-01

Increased data rates have motivated the investigation of advanced modulation schemes, such as four-level pulseamplitude modulation (PAM4), in optical interconnect systems in order to enable longer transmission distances and operation with reduced circuit bandwidth relative to non-return-to-zero (NRZ) modulation. Employing this modulation scheme in interconnect architectures based on high-Q silicon photonic microring resonator devices, which occupy small area and allow for inherent wavelength-division multiplexing (WDM), offers a promising solution to address the dramatic increase in datacenter and high-performance computing system I/O bandwidth demands. Two ring modulator device structures are proposed for PAM4 modulation, including a single phase shifter segment device driven with a multi-level PAM4 transmitter and a two-segment device driven by two simple NRZ (MSB/LSB) transmitters. Transmitter circuits which utilize segmented pulsed-cascode high swing output stages are presented for both device structures. Output stage segmentation is utilized in the single-segment device design for PAM4 voltage level control, while in the two-segment design it is used for both independent MSB/LSB voltage levels and impedance control for output eye skew compensation. The 65nm CMOS transmitters supply a 4.4Vppd output swing for 40Gb/s operation when driving depletion-mode microring modulators implemented in a 130nm SOI process, with the single- and two-segment designs achieving 3.04 and 4.38mW/Gb/s, respectively. A PAM4 optical receiver front-end is also described which employs a large input-stage feedback resistor transimpedance amplifier (TIA) cascaded with an adaptively-tuned continuous-time linear equalizer (CTLE) for improved sensitivity. Receiver linearity, critical in PAM4 systems, is achieved with a peak-detector-based automatic gain control (AGC) loop.

Abrasive Particle Trajectories and Material Removal Non-Uniformity during CMP and Filtration Characteristics of CMP Slurries - A Simulation and Experimental Study

NASA Astrophysics Data System (ADS)

Rastegar, Vahid

Nanoscale finishing and planarization are integral process steps in multilevel metallization designs for integrated circuit (IC) manufacturing since it is necessary to ensure local and global surface planarization at each metal layer before depositing the next layer. Chemical mechanical planarization (CMP) has been widely recognized as the most promising technology to eliminate topographic variation and has allowed the construction of multilevel interconnection structures with a more regularly stacked sequence, resulting in better device performance [1]. Understanding fundamental of the CMP mechanisms can offer guidance to the control and optimization of the polishing processes. CMP kinematics based on slurry distribution and particle trajectories have a significant impact on MRR profiles. In this work a mathematical model to describe particle trajectories during chemical mechanical polishing was developed and extended to account for the effect of larger particles, particle location changes due to slurry dispensing and in-situ conditioning. Material removal rate (MRR) and within wafer non-uniformity (WIWNU) were determined based on the calculated particle trajectory densities. Rotary dynamics and reciprocating motion were optimized to obtain best MRR uniformity. Edge-fast MRR profile was discussed based on mechanical aspect of CMP. Using the model, we also investigated the effect of variable rotational speeds of wafer and pad, and of large particles on WIWNU and scratch growth. It was shown that the presence of even a small portion of large particles can deteriorate the WIWNU significantly and also lead to more scratches. Furthermore, it was shown that the in-situ conditioning improves the uniformity of the polished wafers. Furthermore, a combined experimental and computational study of fibrous filters for removal of larger abrasive particles from aqueous dispersions, essential to minimize defects during chemical mechanical polishing, was performed. Dilute aqueous suspensions of colloidal ceria particles, of known size distribution, were filtered at different flow rates and the filter efficiencies were measured for different particle sizes and pH, then converted to single fiber efficiencies. The particle size distributions were also measured for the influent and effluent streams. In a series of numerical simulations, the Navier-Stokes equation was solved for a single fiber using the ANSYS-FLUENT computational fluid dynamics commercial package. For dilute suspensions, the motion of the dispersed particles in the size range of 35-600 nm and zeta potential range of -50 to 50 mV was tracked in the Lagrangian reference frame including the effects of hydrodynamic drag, lift, gravity, hydrodynamic retardation, Brownian, van der Waals and electric double layer forces. The electric double layer and van der Waals forces were incorporated in the calculations by developing a user defined function. Particular attention was given to the effects of Brownian excitations, as well as the electric double layer and van der Waals forces that have been neglected in many of the previous models on the overall fiber collection efficiency for different particle sizes and charges. Moreover, the effect of flow velocity on the fiber capture efficiency and residence time was investigated. The effect of velocity on minimum collection efficiency and most penetrating particle size was investigated. It was also shown that the CFD results are in a good agreement with the experimental results.

Hybrid input-output approach to metal production and its application to the introduction of lead-free solders.

PubMed

Nakamura, Shinichiro; Murakami, Shinsuke; Nakajima, Kenichi; Nagasaka, Tetsuya

2008-05-15

The production process of metals such as copper, lead, and zinc is characterized by mutual interconnections and interdependence, as well as by the occurrence of a large number of byproducts, which include precious or rare metals, such as gold, silver, bismuth, and indium. On the basis of the framework of waste input-output (WIO), we present a hybrid 10 model that takes full account of the mutual interdependence among the metal production processes and the interdependence between them and all the other production sectors of the economy as well. The combination of a comprehensive representation of the whole national economy and the introduction of process knowledge of metal production allows for a detailed analysis of different materials-use scenarios under the consideration of full supply chain effects. For illustration, a hypothetical case study of the introduction of lead-free solder involving the production of silver as a byproduct of copper and lead smelting processes was developed and implemented using Japanese data. To meet the increased demand for the recovery and recycling of silver resources from end-of-life products, the final destination of metal silver in terms of products and user categories was estimated, and the target components with the highest silver concentration were identified.

A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

PubMed

Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo; Wuttig, Matthias; Zhang, Wei

2017-07-27

Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge₁Sb₂Te₄ (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.

Nanoscale patterning of two metals on silicon surfaces using an ABC triblock copolymer template.

PubMed

Aizawa, Masato; Buriak, Jillian M

2006-05-03

Patterning technologically important semiconductor interfaces with nanoscale metal films is important for applications such as metallic interconnects and sensing applications. Self-assembling block copolymer templates are utilized to pattern an aqueous metal reduction reaction, galvanic displacement, on silicon surfaces. Utilization of a triblock copolymer monolayer film, polystyrene-block-poly(2-vinylpyridine)-block-poly(ethylene oxide) (PS-b-P2VP-b-PEO), with two blocks capable of selective transport of different metal complexes to the surface (PEO and P2VP), allows for chemical discrimination and nanoscale patterning. Different regions of the self-assembled structure discriminate between metal complexes at the silicon surface, at which time they undergo the spontaneous reaction at the interface. Gold deposition from gold(III) compounds such as HAuCl4(aq) in the presence of hydrofluoric acid mirrors the parent block copolymer core structure, whereas silver deposition from Ag(I) salts such as AgNO3(aq) does the opposite, localizing exclusively under the corona. By carrying out gold deposition first and silver second, sub-100-nm gold features surrounded by silver films can be produced. The chemical selectivity was extended to other metals, including copper, palladium, and platinum. The interfaces were characterized by a variety of methods, including scanning electron microscopy, scanning Auger microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy.

Adhesion and failure analysis of metal-polymer interface in flexible printed circuits boards

NASA Astrophysics Data System (ADS)

Park, Sanghee; Kim, Ye Chan; Choi, Kisuk; Chae, Heeyop; Suhr, Jonghwan; Nam, Jae-Do

2017-12-01

As device miniaturization in microelectronics is currently requested in the development of high performance device, which usually include highly-integrated metal-polyimide multilayer structures. A redistribution layer (RDL) process is currently emerging as one of the most advance fabrication techniques for on-chip interconnect and packaging. One of the major issues in this process is the poor adhesion of the metal-polyimide interfaces particularly in flexible circuit boards due to the flexibility and bendability of devices. In this study, low pressure O2 plasma treatment was investigated to improve the adhesion of metal-polyimide interfaces, using inductively coupled plasma (ICP) treatment. We identified that the adhesion of metal-polyimide interfaces was greatly improved by the surface roughness control providing 46.1 MPa of shear force in the ball shear test after O2 plasma treatment, compared 14.2 MPa without O2 plasma treatment. It was seemingly due to the fact that the adhesion in metal-polyimide interfaces was improved by a chemical conversion of C=O to C-O bonds and by a ring opening reaction of imide groups, which was confirmed with FT-IR analysis. In the finite element numerical analysis of metal-polyimide interfaces, the O2 plasma treated interface showed that the in-plane stress distribution and the vertical directional deformation agreed well with real failure modes in flexible circuits manufacturing.

Advanced processing of CdTe pixel radiation detectors

NASA Astrophysics Data System (ADS)

Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

2017-12-01

We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

An autonomously electrically self-healing liquid metal-elastomer composite for robust soft-matter robotics and electronics.

PubMed

Markvicka, Eric J; Bartlett, Michael D; Huang, Xiaonan; Majidi, Carmel

2018-07-01

Large-area stretchable electronics are critical for progress in wearable computing, soft robotics and inflatable structures. Recent efforts have focused on engineering electronics from soft materials-elastomers, polyelectrolyte gels and liquid metal. While these materials enable elastic compliance and deformability, they are vulnerable to tearing, puncture and other mechanical damage modes that cause electrical failure. Here, we introduce a material architecture for soft and highly deformable circuit interconnects that are electromechanically stable under typical loading conditions, while exhibiting uncompromising resilience to mechanical damage. The material is composed of liquid metal droplets suspended in a soft elastomer; when damaged, the droplets rupture to form new connections with neighbours and re-route electrical signals without interruption. Since self-healing occurs spontaneously, these materials do not require manual repair or external heat. We demonstrate this unprecedented electronic robustness in a self-repairing digital counter and self-healing soft robotic quadruped that continue to function after significant damage.

Influence of cadmium on physiological parameters and efficiency of chickens-broilers

NASA Astrophysics Data System (ADS)

Lisunova, L. I.; Tokarev, V. S.; Lisunova, A. V.

2003-05-01

In modern conditions a basis of activity of the person becomes the principle of ecological rationality including development and practical use of systems, technologies and the ways providing reception of ecologically safe production of animal industries. Heavy metals concern to number of the most dangerous objects of an environment The sizes of their distribution and intensity of migration in an environment have got dangerous character for normal functioning and health of people. In this connection there is a real necessity of development of strategy of regulation of a level of heavy metals for system about “ground - an atmosphere - water - a plant - an animal - the person”, basing on the interconnected and mutually conditioned processes of their circulation. Cadmium concerns to group of heavy metals. Its increased contents in an organism of the person reduces ability to resist to illnesses. It has mutagen and cancerogenic properties, negatively influences on a heredity. It also promotes development of diseases of kidneys, and also a gastritis and an anemia.

Results of a preimpoundment water-quality study of Swatara Creek, Pennsylvania

USGS Publications Warehouse

Fishel, David K.; Richardson, J.E.

1986-01-01

The impoundment will act as a sediment trap and thus reduce the concentrations of total phosphorus, iron, aluminum, lead, copper, and zinc immediately downstream from the impoundment. Large storm discharges and releases from the hypolimnion of the reservoir to attain the winter-pool level may contain low oxygen concentrations and elevated concentrations of iron, aluminum, lead, copper, and zinc. Unless conservation releases from the multi-level release gates are carefully controlled, low dissolved-oxygen levels and high metal concentrations may degrade the downstream water quality and be detrimental to the aquatic community.

Decentralization, stabilization, and estimation of large-scale linear systems

NASA Technical Reports Server (NTRS)

Siljak, D. D.; Vukcevic, M. B.

1976-01-01

In this short paper we consider three closely related aspects of large-scale systems: decentralization, stabilization, and estimation. A method is proposed to decompose a large linear system into a number of interconnected subsystems with decentralized (scalar) inputs or outputs. The procedure is preliminary to the hierarchic stabilization and estimation of linear systems and is performed on the subsystem level. A multilevel control scheme based upon the decomposition-aggregation method is developed for stabilization of input-decentralized linear systems Local linear feedback controllers are used to stabilize each decoupled subsystem, while global linear feedback controllers are utilized to minimize the coupling effect among the subsystems. Systems stabilized by the method have a tolerance to a wide class of nonlinearities in subsystem coupling and high reliability with respect to structural perturbations. The proposed output-decentralization and stabilization schemes can be used directly to construct asymptotic state estimators for large linear systems on the subsystem level. The problem of dimensionality is resolved by constructing a number of low-order estimators, thus avoiding a design of a single estimator for the overall system.

Autonomous Energy Grids: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kroposki, Benjamin D; Dall-Anese, Emiliano; Bernstein, Andrey

With much higher levels of distributed energy resources - variable generation, energy storage, and controllable loads just to mention a few - being deployed into power systems, the data deluge from pervasive metering of energy grids, and the shaping of multi-level ancillary-service markets, current frameworks to monitoring, controlling, and optimizing large-scale energy systems are becoming increasingly inadequate. This position paper outlines the concept of 'Autonomous Energy Grids' (AEGs) - systems that are supported by a scalable, reconfigurable, and self-organizing information and control infrastructure, can be extremely secure and resilient (self-healing), and self-optimize themselves in real-time for economic and reliable performancemore » while systematically integrating energy in all forms. AEGs rely on scalable, self-configuring cellular building blocks that ensure that each 'cell' can self-optimize when isolated from a larger grid as well as partaking in the optimal operation of a larger grid when interconnected. To realize this vision, this paper describes the concepts and key research directions in the broad domains of optimization theory, control theory, big-data analytics, and complex system modeling that will be necessary to realize the AEG vision.« less

Individual, social and community-level predictors of wellbeing in a US sample of transgender and gender non-conforming individuals.

PubMed

Stanton, Megan C; Ali, Samira; Chaudhuri, Sambuddha

2017-01-01

In the last decade, increased attention has been paid to the physical and mental health needs of transgender and gender non-conforming individuals. However, despite this surge of research, scant literature addresses factors associated with wellbeing among members of this population. Using data from the US Social Justice Sexuality Survey, this study examines predictors of wellbeing in a sample of transgender and gender non-conforming individuals. Results indicate that higher levels of wellbeing are predicted by education, older age and a greater sense of connectedness to the lesbian, gay, bisexual and transgender community. Additionally, although health insurance did not have a significant impact on wellbeing, increased general health was associated with greater wellbeing, as was perceived comfort of the healthcare provider regarding the respondent's sexual identity. These findings can inform multi-level intervention with transgender and gender non-conforming persons to promote their wellbeing, as well as guide policies and practices around healthcare provider training. Future research should further examine the interconnected predictors of wellbeing among members of this population.

Effect of EDTA washing of metal polluted garden soils. Part I: Toxicity hazards and impact on soil properties.

PubMed

Jelusic, Masa; Lestan, Domen

2014-03-15

We applied a multi-level approach assessing the quality, toxicity and functioning of Pb, Zn and Cd contaminated/remediated soil from a vegetable garden in Meza Valley, Slovenia. Contaminated soil was extracted with EDTA and placed into field experimental plots equipped with lysimeters. Soil properties were assessed by standard pedological analysis. Fractionation and leachability of toxic metals were analyzed by sequential extraction and TCLP and metal bioaccessibility by UBM tests. Soil respiration and enzyme activities were measured as indicators of soil functioning. Remediation reduced the metal burden by 80, 28 and 72% for Pb, Zn and Cd respectively, with a limited impact on soil pedology. Toxic metals associated with labile soil fractions were largely removed. No shifts between labile and residual fractions were observed during the seven months of the experiment. Initial metal leaching measured through lysimeters eventually ceased. However, remediation significantly diminished potential soil enzyme activity and no trends were observed of the remediated soil recovering its biological properties. Soil washing successfully removed available forms of Pb, Zn and Cd and thus lowered the human and environmental hazards of the remediated soil; however, remediation also extracted the trace elements essential for soil biota. In addition to reduced water holding capacity, soil health was not completely restored. Copyright © 2013 Elsevier B.V. All rights reserved.

From autonomy to creativity: a multilevel investigation of the mediating role of harmonious passion.

PubMed

Liu, Dong; Chen, Xiao-Ping; Yao, Xin

2011-03-01

Building on self-determination theory, we theorized about and demonstrated, through 2 multilevel field studies, the pivotal role of harmonious passion in translating organizational autonomy support and individual autonomy orientation into job creativity. Results based on 3-level data from 856 members in 111 teams within 23 work units of a porous metal company (Study 1) and from 525 employees in 98 teams of 18 branches of a large commercial bank (Study 2) revealed 2 major findings. First, organizational autonomy support from a higher organizational level (unit or branch) compensated for the effect of autonomy support from a lower organizational level (team) or individual autonomy orientation on employees' harmonious passion. Second, harmonious passion mediated the interactive effects of unit (branch) autonomy support and team member autonomy orientation, of team autonomy support and team member autonomy orientation, and of unit (branch) autonomy support and team autonomy support on individual creativity. We discuss the theoretical and practical implications of these findings in the organizational context. PsycINFO Database Record (c) 2011 APA, all rights reserved.

Effect of AlN layer on the bipolar resistive switching behavior in TiN thin film based ReRAM device for non-volatile memory application

NASA Astrophysics Data System (ADS)

Prakash, Ravi; Kaur, Davinder

2018-05-01

The effect of an additional AlN layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (102) corresponding to HRS and LRS, good write/erase endurance (105) and non-volatile long retention (105s) are also observed. Higher thermal conductivity of the AlN layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/AlN/Pt devices for multilevel nonvolatile ReRAM application.

Automated Array Assembly, Phase 2

NASA Technical Reports Server (NTRS)

Carbajal, B. G.

1979-01-01

The Automated Array Assembly Task, Phase 2 of the Low Cost Silicon Solar Array Project is a process development task. The contract provides for the fabrication of modules from large area tandem junction cells (TJC). During this quarter, effort was focused on the design of a large area, approximately 36 sq cm, TJC and process verification runs. The large area TJC design was optimized for minimum I squared R power losses. In the TJM activity, the cell-module interfaces were defined, module substrates were formed and heat treated and clad metal interconnect strips were fabricated.

Non-Electronic Radio Front-End (NERF)

DTIC Science & Technology

2007-04-01

electro - optic field sensor. The absence of metallic interconnects and the charge isolation provided by the optics removes the soft spots in a traditional receiver. In the proof-of concept experiment, detection of C band electromagnetic signals at 7.38 GHz with a sensitivity of 4.3x10 -3 V/m.Hz(exp 1/2) is demonstrated. The dielectric approach has an added benefit: it reduces physical size of the front end an important benefit in mobile applications. DIELECTRIC RESONATOR ANTENNA, PHOTONICALLY ISOLATED ANTENNA RECEIVER, ELECTRO - OPTIC DIELECTRIC ANTENNA,

Flexure bearing support, with particular application to stirling machines

DOEpatents

Beckett, Carl D.; Lauhala, Victor C.; Neely, Ron; Penswick, Laurence B.; Ritter, Darren C.; Nelson, Richard L.; Wimer, Burnell P.

1996-01-01

The use of flexures in the form of flat spiral springs cut from sheet metal materials provides support for coaxial nonrotating linear reciprocating members in power conversion machinery, such as Stirling cycle engines or heat pumps. They permit operation with little or no rubbing contact or other wear mechanisms. The relatively movable members include one member having a hollow interior structure within which the flexures are located. The flexures permit limited axial movement between the interconnected members, but prevent adverse rotational movement and radial displacement from their desired coaxial positions.

Flexure bearing support, with particular application to Stirling machines

DOEpatents

Beckett, C.D.; Lauhala, V.C.; Neely, R.; Penswick, L.B.; Ritter, D.C.; Nelson, R.L.; Wimer, B.P.

1996-06-04

The use of flexures in the form of flat spiral springs cut from sheet metal materials provides support for coaxial non-rotating linear reciprocating members in power conversion machinery, such as Stirling cycle engines or heat pumps. They permit operation with little or no rubbing contact or other wear mechanisms. The relatively movable members include one member having a hollow interior structure within which the flexures are located. The flexures permit limited axial movement between the interconnected members, but prevent adverse rotational movement and radial displacement from their desired coaxial positions. 8 figs.

Integrated thin film cadmium sulfide solar cell module

NASA Technical Reports Server (NTRS)

Mickelsen, R. A.; Abbott, D. D.

1971-01-01

The design, development, fabrication and tests of flexible integrated thin-film cadmium sulfide solar cells and modules are discussed. The development of low cost and high production rate methods for interconnecting cells into large solar arrays is described. Chromium thin films were applied extensively in the deposited cell structures as a means to: (1) achieve high adherence between the cadmium sulfide films and the vacuum-metallized copper substrates, (2) obtain an ohmic contact to the cadmium sulfide films, and (3) improve the adherence of gold films as grids or contact areas.

End-of-fabrication CMOS process monitor

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Allen, R. A.; Blaes, B. R.; Hannaman, D. J.; Lieneweg, U.; Lin, Y.-S.; Sayah, H. R.

1990-01-01

A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's).

Interchip link system using an optical wiring method.

PubMed

Cho, In-Kui; Ryu, Jin-Hwa; Jeong, Myung-Yung

2008-08-15

A chip-scale optical link system is presented with a transmitter/receiver and optical wire link. The interchip link system consists of a metal optical bench, a printed circuit board module, a driver/receiver integrated circuit, a vertical cavity surface-emitting laser/photodiode array, and an optical wire link composed of plastic optical fibers (POFs). We have developed a downsized POF and an optical wiring method that allows on-site installation with a simple annealing as optical wiring technologies for achieving high-density optical interchip interconnection within such devices. Successful data transfer measurements are presented.

Safe-life and damage-tolerant design approaches for helicopter structures

NASA Technical Reports Server (NTRS)

Reddick, H. K., Jr.

1983-01-01

The safe-life and damage-tolerant design approaches discussed apply to both metallic and fibrous composite helicopter structures. The application of these design approaches to fibrous composite structures is emphasized. Safe-life and damage-tolerant criteria are applied to all helicopter flight critical components, which are generally categorized as: dynamic components with a main and tail rotor system, which includes blades, hub and rotating controls, and drive train which includes transmission, and main and interconnecting rotor shafts; and the airframe, composed of the fuselage, aerodynamic surfaces, and landing gear.

Interconnect assembly for an electronic assembly and assembly method therefor

DOEpatents

Gerbsch, Erich William

2003-06-10

An interconnect assembly and method for a semiconductor device, in which the interconnect assembly can be used in lieu of wirebond connections to form an electronic assembly. The interconnect assembly includes first and second interconnect members. The first interconnect member has a first surface with a first contact and a second surface with a second contact electrically connected to the first contact, while the second interconnect member has a flexible finger contacting the second contact of the first interconnect member. The first interconnect member is adapted to be aligned and registered with a semiconductor device having a contact on a first surface thereof, so that the first contact of the first interconnect member electrically contacts the contact of the semiconductor device. Consequently, the assembly method does not require any wirebonds, but instead merely entails aligning and registering the first interconnect member with the semiconductor device so that the contacts of the first interconnect member and the semiconductor device make electrically contact, and then contacting the second contact of the first interconnect member with the flexible finger of the second interconnect member.

The Highly Robust Electrical Interconnects and Ultrasensitive Biosensors Based on Embedded Carbon Nanotube Arrays

NASA Technical Reports Server (NTRS)

Li, Jun; Cassell, Alan; Koehne, Jessica; Chen, Hua; Ng, Hou Tee; Ye, Qi; Stevens, Ramsey; Han, Jie; Meyyappan, M.

2003-01-01

We report on our recent breakthroughs in two different applications using well-aligned carbon nanotube (CNT) arrays on Si chips, including (1) a novel processing solution for highly robust electrical interconnects in integrated circuit manufacturing, and (2) the development of ultrasensitive electrochemical DNA sensors. Both of them rely on the invention of a bottom-up fabrication scheme which includes six steps, including: (a) lithographic patterning, (b) depositing bottom conducting contacts, (c) depositing metal catalysts, (d) CNT growth by plasma enhanced chemical vapor deposition (PECVD), (e) dielectric gap-filling, and (f) chemical mechanical polishing (CMP). Such processes produce a stable planarized surface with only the open end of CNTs exposed, whch can be further processed or modified for different applications. By depositing patterned top contacts, the CNT can serve as vertical interconnects between the two conducting layers. This method is fundamentally different fiom current damascene processes and avoids problems associated with etching and filling of high aspect ratio holes at nanoscales. In addition, multiwalled CNTs (MWCNTs) are highly robust and can carry a current density of 10(exp 9) A/square centimeters without degradation. It has great potential to help extending the current Si technology. The embedded MWCNT array without the top contact layer can be also used as a nanoelectrode array in electrochemical biosensors. The cell time-constant and sensitivity can be dramatically improved. By functionalizing the tube ends with specific oligonucleotide probes, specific DNA targets can be detected with electrochemical methods down to subattomoles.

Effect of SiO2 on immobilization of metals and encapsulation of a glass network in slag.

PubMed

Kuo, Yi-Ming; Lin, Ta-Chang; Tsai, Perng-Jy

2003-11-01

The final disposal of ash from an incinerator is of special concern because of the possibility of its releasing toxic substances. Melting/vitrification has been regarded as a prospective technology of ash treatment. The object of this investigation was to evaluate the effect of silica (SiO2) addition on the immobilization of hazardous metals and the encapsulation of a glass network during the vitrification process. Four specimens with SiO2/fly ash mixing ratios of 0, 0.1, 0.2, and 0.3, respectively, were tested. The mobility of metals in slag was then estimated by a sequential extraction procedure. X-ray diffraction analysis indicates that SiO2 leads to the polymerization of silicates. The encapsulation of aluminum, calcium, and magnesium would not be observed unless adequate amount of SiO2 was added. It was also found that SiO2 addition enhances the formation of a compact and interconnected glass network structure and, thus, contributes to the chemical stability of metals in slag. After vitrification, the mobility of cadmium, copper, iron, chromium, nickel, lead, and zinc was significantly reduced. However, there is no significant correlation between the immobilization of these metals and the addition of SiO2.

Photoluminescent Au-Ge composite nanodots formation on SiO2 surface by ion induced dewetting

NASA Astrophysics Data System (ADS)

Datta, D. P.; Siva, V.; Singh, A.; Kanjilal, D.; Sahoo, P. K.

2017-09-01

Medium energy ion irradiation on a bilayer of Au and Ge on SiO2 is observed to result in gradual morphological evolution from an interconnected network to a nanodot array on the insulator surface. Structural and compositional analyses reveal composite nature of the nanodots, comprising of both Au and Ge. The growing nanostructures are found to be photoluminescent at room temperature where the emission intensity and wavelengths vary with morphology. The growth of such nanostructures can be understood in terms of dewetting of the metal layer under ion irradiation due to ion-induced melting along the ion tracks. The visible PL emission is found to be related with evolution of the Au-Ge nanodots. The study indicates a route towards single step synthesis of metal-semiconductor nanodots on insulator surface.

Graphene-MoS2 Heterojunctions for High-Speed Opto-electronics

NASA Astrophysics Data System (ADS)

Horng, Jason; Wang, Alex; Wang, Danqing; Li, Alexander Shengzhi; Wang, Feng

Heterostructures consisting of two-dimensional materials has drawn significant attention in different research fields owning to their novel electronic states and potential applications. Transmitting information with transition metal dichalcogenides(TMDC) electro-optical modulator switch interconnect is of great interest for technological applications. However, their high-speed applications have been slowed by their intrinsically high resistivity as well as the difficulties in making optimized metal contacts. Here, we present a new strategy by using graphene as a tunable contact to two-dimensional semiconductors to explore possible applications in high-speed opto-electronics. We will present an optical study to provide better understanding of band alignment in graphene/MoS2 heterostructures and a demonstration of high-speed opto-electronics based on these heterostructures. The result shows the new scheme could have potential in both opto-modulators and optical sensing applications.

Ballistic Fracturing of Carbon Nanotubes.

PubMed

Ozden, Sehmus; Machado, Leonardo D; Tiwary, ChandraSekhar; Autreto, Pedro A S; Vajtai, Robert; Barrera, Enrique V; Galvao, Douglas S; Ajayan, Pulickel M

2016-09-21

Advanced materials with multifunctional capabilities and high resistance to hypervelocity impact are of great interest to the designers of aerospace structures. Carbon nanotubes (CNTs) with their lightweight and high strength properties are alternative to metals and/or metallic alloys conventionally used in aerospace applications. Here we report a detailed study on the ballistic fracturing of CNTs for different velocity ranges. Our results show that the highly energetic impacts cause bond breakage and carbon atom rehybridizations, and sometimes extensive structural reconstructions were also observed. Experimental observations show the formation of nanoribbons, nanodiamonds, and covalently interconnected nanostructures, depending on impact conditions. Fully atomistic reactive molecular dynamics simulations were also carried out in order to gain further insights into the mechanism behind the transformation of CNTs. The simulations show that the velocity and relative orientation of the multiple colliding nanotubes are critical to determine the impact outcome.

Cooling rate dependence of structural order in Al90Sm10 metallic glass

NASA Astrophysics Data System (ADS)

Sun, Yang; Zhang, Yue; Zhang, Feng; Ye, Zhuo; Ding, Zejun; Wang, Cai-Zhuang; Ho, Kai-Ming

2016-07-01

The atomic structure of Al90Sm10 metallic glass is studied using molecular dynamics simulations. By performing a long sub-Tg annealing, we developed a glass model closer to the experiments than the models prepared by continuous cooling. Using the cluster alignment method, we found that "3661" cluster is the dominating short-range order in the glass samples. The connection and arrangement of "3661" clusters, which define the medium-range order in the system, are enhanced significantly in the sub-Tg annealed sample as compared with the fast cooled glass samples. Unlike some strong binary glass formers such as Cu64.5Zr35.5, the clusters representing the short-range order do not form an interconnected interpenetrating network in Al90Sm10, which has only marginal glass formability.

Ceramic plasma-sprayed coating of melting crucibles for casting metal fuel slugs

DOE Office of Scientific and Technical Information (OSTI.GOV)

K.H. Kim; C.T. Lee; C.B. Lee

2013-10-01

Thermal cycling and melt reaction studies of ceramic coatings plasma-sprayed on Nb substrates were carried out to evaluate the performance of barrier coatings for metallic fuel casting applications. Thermal cycling tests of the ceramic plasma-sprayed coatings to 1450 degrees C showed that HfN, TiC, ZrC, and Y2O3 coating had good cycling characteristics with few interconnected cracks even after 20 cycles. Interaction studies by 1550 degrees C melt dipping tests of the plasma-sprayed coatings also indicated that HfN and Y2O3 do not form significant reaction layer between U–20 wt.% Zr melt and the coating layer. Plasma-sprayed Y2O3 coating exhibited the mostmore » promising characteristics among HfN, TiC, ZrC, and Y2O3 coating.« less

Self-assembly of an electronically conductive network through microporous scaffolds.

PubMed

Sebastian, H Bri; Bryant, Steven L

2017-06-15

Electron transfer spanning significant distances through a microporous structure was established via the self-assembly of an electronically conductive iridium oxide nanowire matrix enveloping the pore walls. Microporous formations were simulated using two scaffold materials of varying physical and chemical properties; paraffin wax beads, and agar gel. Following infiltration into the micropores, iridium nanoparticles self-assembled at the pore wall/ethanol interface. Subsequently, cyclic voltammetry was employed to electrochemically crosslink the metal, erecting an interconnected, and electronically conductive metal oxide nanowire matrix. Electrochemical and spectral characterization techniques confirmed the formation of oxide nanowire matrices encompassing lengths of at least 1.6mm, 400× distances previously achieved using iridium nanoparticles. Nanowire matrices were engaged as biofuel cell anodes, where electrons were donated to the nanowires by a glucose oxidizing enzyme. Copyright © 2017 Elsevier Inc. All rights reserved.

Synthesis, Processing and Properties of Calcium- and Nickel-Doped Yttrium Chromates(III) Y0.8Ca0.2Cr1-x Ni x O3 (x = 0-0.3) and Studies on Their Potential Application as Coatings for SOFC Interconnects

NASA Astrophysics Data System (ADS)

Stygar, M.; Tejchman, W.; Dąbrowa, J.; Kruk, A.; Brylewski, T.

2018-05-01

In the present study, a calcium- and nickel-doped yttrium chromates (YCCN)-based, conductive-protective layers for metallic interconnects used in the intermediate-temperature solid oxide fuel cells (IT-SOFCs) were investigated. Synthesis of Y0.8Ca0.2Cr1-x Ni x O3 (x = 0; 0.15 and 0.3) powders was performed using a wet chemistry method with two different complexing agents: ethylenediaminetetraacetic acid and glycine. Based on the result of thermal analysis of obtained precursors, optimal conditions of the calcination process were determined. Powders were then milled, compacted and sintered at different temperatures using free sintering method, into series of dense, polycrystalline sinters. The use of glycine precursor allowed obtaining a single-phase material in all cases. Based on the electrical and sintering properties, the Y0.8Ca0.2Cr0.85Ni0.15O3 material was selected for further studies. It was deposited using cost-effective screen-printing method on the Crofer 22APU ferritic stainless steel. To investigate properties and suitability of the resulting layer/steel system for IT-SOFCs applications, the high-temperature, dual-atmosphere studies were carried out for the first time for ceramic/metallic system, in conditions as close as possible to actual working conditions of the fuel cell. The layer exhibited high stability and good protective properties. The area-specific resistance of the studied ceramic layer/metallic substrate composite was determined, with the obtained value of 0.0366 Ω cm2 being within the arbitrary limit set for these materials (0.1 Ω cm2). The results show that the investigated materials are suitable for the projected application.

Amino Acids Aided Sintering for the Formation of Highly Porous FeAl Intermetallic Alloys

PubMed Central

Karczewski, Krzysztof; Stepniowski, Wojciech J.

2017-01-01

Fabrication of metallic foams by sintering metal powders mixed with thermally degradable compounds is of interest for numerous applications. Compounds releasing gaseous nitrogen, minimizing interactions between the formed gases and metallic foam by diluting other combustion products, were applied. Cysteine and phenylalanine, were used as gas releasing agents during the sintering of elemental Fe and Al powders in order to obtain metallic foams. Characterization was carried out by optical microscopy with image analysis, scanning electron microscopy with energy dispersive spectroscopy, and gas permeability tests. Porosity of the foams was up to 42 ± 3% and 46 ± 2% for sintering conducted with 5 wt % cysteine and phenylalanine, respectively. Chemical analyses of the formed foams revealed that the oxygen content was below 0.14 wt % and the carbon content was below 0.3 wt %. Therefore, no brittle phases could be formed that would spoil the mechanical stability of the FeAl intermetallic foams. The gas permeability tests revealed that only the foams formed in the presence of cysteine have enough interconnections between the pores, thanks to the improved air flow through the porous materials. The foams formed with cysteine can be applied as filters and industrial catalysts. PMID:28773106

Micromachined Chip Scale Thermal Sensor for Thermal Imaging.

PubMed

Shekhawat, Gajendra S; Ramachandran, Srinivasan; Jiryaei Sharahi, Hossein; Sarkar, Souravi; Hujsak, Karl; Li, Yuan; Hagglund, Karl; Kim, Seonghwan; Aden, Gary; Chand, Ami; Dravid, Vinayak P

2018-02-27

The lateral resolution of scanning thermal microscopy (SThM) has hitherto never approached that of mainstream atomic force microscopy, mainly due to poor performance of the thermal sensor. Herein, we report a nanomechanical system-based thermal sensor (thermocouple) that enables high lateral resolution that is often required in nanoscale thermal characterization in a wide range of applications. This thermocouple-based probe technology delivers excellent lateral resolution (∼20 nm), extended high-temperature measurements >700 °C without cantilever bending, and thermal sensitivity (∼0.04 °C). The origin of significantly improved figures-of-merit lies in the probe design that consists of a hollow silicon tip integrated with a vertically oriented thermocouple sensor at the apex (low thermal mass) which interacts with the sample through a metallic nanowire (50 nm diameter), thereby achieving high lateral resolution. The efficacy of this approach to SThM is demonstrated by imaging embedded metallic nanostructures in silica core-shell, metal nanostructures coated with polymer films, and metal-polymer interconnect structures. The nanoscale pitch and extremely small thermal mass of the probe promise significant improvements over existing methods and wide range of applications in several fields including semiconductor industry, biomedical imaging, and data storage.

Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications

NASA Astrophysics Data System (ADS)

Dupré, Ludovic; Marra, Marjorie; Verney, Valentin; Aventurier, Bernard; Henry, Franck; Olivier, François; Tirano, Sauveur; Daami, Anis; Templier, François

2017-02-01

We report the fabrication process and characterization of high resolution 873 x 500 pixels emissive arrays based on blue or green GaN/InGaN light emitting diodes (LEDs) at a reduced pixel pitch of 10 μm. A self-aligned process along with a combination of damascene metallization steps is presented as the key to create a common cathode which is expected to provide good thermal dissipation and prevent voltage drops between center and side of the micro LED matrix. We will discuss the challenges of a self-aligned technology related to the choice of a good P contact metal and will present our solutions for the realization of the metallic interconnections between the GaN contacts and the higher levels of metallization at such a small pixel pitch. Enhanced control of each technological step allows scalability of the process up to 4 inch LED wafers and production of high quality LED arrays. The very high brightness (up to 107 cd.m-2) and good external quantum efficiency (EQE) of the resulting device make these kind of micro displays suitable for augmented reality or head up display applications.

A Top-Down Strategy toward SnSb In-Plane Nanoconfined 3D N-Doped Porous Graphene Composite Microspheres for High Performance Na-Ion Battery Anode.

PubMed

Qin, Jian; Wang, Tianshuai; Liu, Dongye; Liu, Enzuo; Zhao, Naiqin; Shi, Chunsheng; He, Fang; Ma, Liying; He, Chunnian

2018-03-01

Engineering of 3D graphene/metal composites with ultrasmall sized metal and robust metal-graphene interfacial interaction for energy storage application is still a challenge and rarely reported. In this work, a facile top-down strategy is developed for the preparation of SnSb-in-plane nanoconfined 3D N-doped porous graphene networks for sodium ion battery anodes, which are composed of several tens of interconnected empty N-graphene boxes in-plane firmly embedded with ultrasmall SnSb nanocrystals. The all-around encapsulation (plane-to-plane contact) architecture that provides a large interface between N-graphene and SnSb nanocrystal not only effectively enhances the electron conductivity and structural integrity of the overall electrode, but also offers excess interfacial sodium storage, thus leading to much enhanced high-rate sodium storage capacity and stability, which has been proven by both experimental results and first-principles simulations. Moreover, this top-down strategy can enable new paths to the low-cost and high-yield synthesis of 3D graphene/metal composites for applications in energy-related fields and beyond. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrahigh–current density anodes with interconnected Li metal reservoir through overlithiation of mesoporous AlF 3 framework

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hansen; Lin, Dingchang; Liu, Yayuan

Lithium (Li) metal is the ultimate solution for next-generation high–energy density batteries but is plagued from commercialization by infinite relative volume change, low Coulombic efficiency due to side reactions, and safety issues caused by dendrite growth. These hazardous issues are further aggravated under high current densities needed by the increasing demand for fast charging/discharging. We report a one-step fabricated Li/Al 4Li 9-LiF nanocomposite (LAFN) through an “overlithiation” process of a mesoporous AlF 3 framework, which can simultaneously mitigate the abovementioned problems. Reaction-produced Al 4Li 9-LiF nanoparticles serve as the ideal skeleton for Li metal infusion, helping to achieve a near-zeromore » volume change during stripping/plating and suppressed dendrite growth. As a result, the LAFN electrode is capable of working properly under an ultrahigh current density of 20 mA cm –2 in symmetric cells and manifests highly improved rate capability with increased Coulombic efficiency in full cells. Here, the simple fabrication process and its remarkable electrochemical performances enable LAFN to be a promising anode candidate for next-generation lithium metal batteries.« less

A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface

NASA Astrophysics Data System (ADS)

Galmed, A. H.; Kassem, A. K.; von Bergmann, H.; Harith, M. A.

2011-01-01

Metals and metal alloys are usually employed as interconnections to guide electrical signals between components into the very large scale integrated (VLSI) devices. These devices demand higher complexity, better performance and lower cost. Thin film is a common geometry for these metallic applications, requiring a substrate for rigidity. Accurate depth profile analysis of coatings is becoming increasingly important with expanding industrial use in technological fields. A number of articles devoted to LIBS applications for depth-resolved analysis have been published in recent years. In the present work, we are studying the ability of femtosecond LIBS to make depth profiling for a Ti thin film of thickness 213 nm deposited onto a silicon (100) substrate before and after thermal annealing. The measurements revealed that an average ablation rates of 15 nm per pulse have been achieved. The thin film was examined using X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM), while the formation of the interface was examined using Rutherford Back Scattering (RBS) before and after annealing. To verify the depth profiling results, a theoretical simulation model is presented that gave a very good agreement with the experimental results.

Development of ultralight, super-elastic, hierarchical metallic meta-structures with i3DP technology

NASA Astrophysics Data System (ADS)

Zhang, Dongxing; Xiao, Junfeng; Moorlag, Carolyn; Guo, Qiuquan; Yang, Jun

2017-11-01

Lightweight and mechanically robust materials show promising applications in thermal insulation, energy absorption, and battery catalyst supports. This study demonstrates an effective method for creation of ultralight metallic structures based on initiator-integrated 3D printing technology (i3DP), which provides a possible platform to design the materials with the best geometric parameters and desired mechanical performance. In this study, ultralight Ni foams with 3D interconnected hollow tubes were fabricated, consisting of hierarchical features spanning three scale orders ranging from submicron to centimeter. The resultant materials can achieve an ultralight density of as low as 5.1 mg cm-3 and nearly recover after significant compression up to 50%. Due to a high compression ratio, the hierarchical structure exhibits superior properties in terms of energy absorption and mechanical efficiency. The relationship of structural parameters and mechanical response was established. The ability of achieving ultralight density <10 mg cm-3 and the stable \\bar{E}˜ {\\bar{ρ }}2 scaling through all range of relative density, indicates an advantage over the previous stochastic metal foams. Overall, this initiator-integrated 3D printing approach provides metallic structures with substantial benefits from the hierarchical design and fabrication flexibility to ultralight applications.

Ultrahigh–current density anodes with interconnected Li metal reservoir through overlithiation of mesoporous AlF 3 framework

DOE PAGES

Wang, Hansen; Lin, Dingchang; Liu, Yayuan; ...

2017-09-08

Lithium (Li) metal is the ultimate solution for next-generation high–energy density batteries but is plagued from commercialization by infinite relative volume change, low Coulombic efficiency due to side reactions, and safety issues caused by dendrite growth. These hazardous issues are further aggravated under high current densities needed by the increasing demand for fast charging/discharging. We report a one-step fabricated Li/Al 4Li 9-LiF nanocomposite (LAFN) through an “overlithiation” process of a mesoporous AlF 3 framework, which can simultaneously mitigate the abovementioned problems. Reaction-produced Al 4Li 9-LiF nanoparticles serve as the ideal skeleton for Li metal infusion, helping to achieve a near-zeromore » volume change during stripping/plating and suppressed dendrite growth. As a result, the LAFN electrode is capable of working properly under an ultrahigh current density of 20 mA cm –2 in symmetric cells and manifests highly improved rate capability with increased Coulombic efficiency in full cells. Here, the simple fabrication process and its remarkable electrochemical performances enable LAFN to be a promising anode candidate for next-generation lithium metal batteries.« less

Emerging Hierarchical Aerogels: Self-Assembly of Metal and Semiconductor Nanocrystals.

PubMed

Cai, Bin; Sayevich, Vladimir; Gaponik, Nikolai; Eychmüller, Alexander

2018-06-19

Aerogels assembled from colloidal metal or semiconductor nanocrystals (NCs) feature large surface area, ultralow density, and high porosity, thus rendering them attractive in various applications, such as catalysis, sensors, energy storage, and electronic devices. Morphological and structural modification of the aerogel backbones while maintaining the aerogel properties enables a second stage of the aerogel research, which is defined as hierarchical aerogels. Different from the conventional aerogels with nanowire-like backbones, those hierarchical aerogels are generally comprised of at least two levels of architectures, i.e., an interconnected porous structure on the macroscale and a specially designed configuration at local backbones at the nanoscale. This combination "locks in" the inherent properties of the NCs, so that the beneficial genes obtained by nanoengineering are retained in the resulting monolithic hierarchical aerogels. Herein, groundbreaking advances in the design, synthesis, and physicochemical properties of the hierarchical aerogels are reviewed and organized in three sections: i) pure metallic hierarchical aerogels, ii) semiconductor hierarchical aerogels, and iii) metal/semiconductor hybrid hierarchical aerogels. This report aims to define and demonstrate the concept, potential, and challenges of the hierarchical aerogels, thereby providing a perspective on the further development of these materials. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fibrous hybrid of graphene and sulfur nanocrystals for high-performance lithium-sulfur batteries.

PubMed

Zhou, Guangmin; Yin, Li-Chang; Wang, Da-Wei; Li, Lu; Pei, Songfeng; Gentle, Ian Ross; Li, Feng; Cheng, Hui-Ming

2013-06-25

Graphene-sulfur (G-S) hybrid materials with sulfur nanocrystals anchored on interconnected fibrous graphene are obtained by a facile one-pot strategy using a sulfur/carbon disulfide/alcohol mixed solution. The reduction of graphene oxide and the formation/binding of sulfur nanocrystals were integrated. The G-S hybrids exhibit a highly porous network structure constructed by fibrous graphene, many electrically conducting pathways, and easily tunable sulfur content, which can be cut and pressed into pellets to be directly used as lithium-sulfur battery cathodes without using a metal current-collector, binder, and conductive additive. The porous network and sulfur nanocrystals enable rapid ion transport and short Li(+) diffusion distance, the interconnected fibrous graphene provides highly conductive electron transport pathways, and the oxygen-containing (mainly hydroxyl/epoxide) groups show strong binding with polysulfides, preventing their dissolution into the electrolyte based on first-principles calculations. As a result, the G-S hybrids show a high capacity, an excellent high-rate performance, and a long life over 100 cycles. These results demonstrate the great potential of this unique hybrid structure as cathodes for high-performance lithium-sulfur batteries.

Phase restructuring in transition metal dichalcogenides for highly stable energy storage

DOE PAGES

Leng, Kai; Chen, Zhongxin; Zhao, Xiaoxu; ...

2016-09-16

Achieving homogeneous phase transition and uniform charge distribution is essential for good cycle stability and high capacity when phase conversion materials are used as electrodes. Herein, we show that chemical lithiation of bulk 2H-MoS 2 distorts its crystalline domains in three primary directions to produce mosaic-like 1T' nanocrystalline domains, which improve phase and charge uniformity during subsequent electrochemical phase conversion. 1T'-Li xMoS 2, a macroscopic dense material with interconnected nanoscale grains, shows excellent cycle stability and rate capability in a lithium rechargeable battery compared to bulk or exfoliated-restacked MoS 2. Transmission electron microscopy studies reveal that the interconnected MoS 2more » nanocrystals created during the phase change process are reformable even after multiple cycles of galvanostatic charging/discharging, which allows them to play important roles in the long term cycling performance of the chemically intercalated TMD materials. Finally, these studies shed light on how bulk TMDs can be processed into quasi-2D nanophase material for stable energy storage.« less

Rapid prototyping of interfacing microcomponents for printed circuit board-level optical interconnects

NASA Astrophysics Data System (ADS)

Van Erps, Jürgen; Vervaeke, Michael; Thienpont, Hugo

2012-01-01

One of the important challenges for the deployment of the emerging breed of nanotechnology components is interfacing them with the external world, preferably accomplished with low-cost micro-optical devices. For the fabrication of this kind of micro-optical components, we make use of deep proton writing (DPW) as a generic rapid prototyping technology. DPW consists of bombarding polymer samples with swift protons, which results after chemical processing steps in high quality micro-optical components. The strength of the DPW micro-machining technology is the ability to fabricate monolithic building blocks that include micro-optical and mechanical functionalities which can be precisely integrated into more complex photonic systems. In this paper we give an overview of the process steps of the technology and we present several examples of micro-optical and micro-mechanical components, fabricated through DPW, targeting applications in printed circuit baordlevel optical interconnections. These include: high-precision 2-D fiber connectors, discrete out-of-plane coupling structures featuring high-quality 45° and curved micro-mirrors, arrays of high aspect ratio micro-pillars and backplane connectors. While DPW is clearly not a mass fabrication technique as such, one of its assets is that once the master component has been prototyped, a metal mould can be generated from the DPW master by applying electroplating. After removal of the plastic master, this metal mould can be used as a shim in a final microinjection moulding or hot embossing step. This way, the master component can be mass-produced at low cost in a wide variety of high-tech plastics.

Advanced cathode materials for polymer electrolyte fuel cells based on pt/ metal oxides: from model electrodes to catalyst systems.

PubMed

Fabbri, Emiliana; Pătru, Alexandra; Rabis, Annett; Kötz, Rüdiger; Schmidt, Thomas J

2014-01-01

The development of stable catalyst systems for application at the cathode side of polymer electrolyte fuel cells (PEFCs) requires the substitution of the state-of-the-art carbon supports with materials showing high corrosion resistance in a strongly oxidizing environment. Metal oxides in their highest oxidation state can represent viable support materials for the next generation PEFC cathodes. In the present work a multilevel approach has been adopted to investigate the kinetics and the activity of Pt nanoparticles supported on SnO2-based metal oxides. Particularly, model electrodes made of SnO2 thin films supporting Pt nanoparticles, and porous catalyst systems made of Pt nanoparticles supported on Sb-doped SnO2 high surface area powders have been investigated. The present results indicate that SnO2-based supports do not modify the oxygen reduction reaction mechanism on the Pt nanoparticle surface, but rather lead to catalysts with enhanced specific activity compared to Pt/carbon systems. Different reasons for the enhancement in the specific activity are considered and discussed.

Memristive and neuromorphic behavior in a LixCoO2 nanobattery

NASA Astrophysics Data System (ADS)

Mai, V. H.; Moradpour, A.; Senzier, P. Auban; Pasquier, C.; Wang, K.; Rozenberg, M. J.; Giapintzakis, J.; Mihailescu, C. N.; Orfanidou, C. M.; Svoukis, E.; Breza, A.; Lioutas, Ch B.; Franger, S.; Revcolevschi, A.; Maroutian, T.; Lecoeur, P.; Aubert, P.; Agnus, G.; Salot, R.; Albouy, P. A.; Weil, R.; Alamarguy, D.; March, K.; Jomard, F.; Chrétien, P.; Schneegans, O.

2015-01-01

The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of LixCoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.

Interconnections Seam Study | Energy Analysis | NREL

Science.gov Websites

Interconnections Seam Study Interconnections Seam Study Through the Interconnections Seam Study between the interconnections. This study will quantify the value of strengthening the connections (or Peer Review - Interconnections Seam Study to learn more. Our Approach To quantify the value of

Multi-level analysis in information systems research: the case of enterprise resource planning system usage in China

NASA Astrophysics Data System (ADS)

Sun, Yuan; Bhattacherjee, Anol

2011-11-01

Information technology (IT) usage within organisations is a multi-level phenomenon that is influenced by individual-level and organisational-level variables. Yet, current theories, such as the unified theory of acceptance and use of technology, describe IT usage as solely an individual-level phenomenon. This article postulates a model of organisational IT usage that integrates salient organisational-level variables such as user training, top management support and technical support within an individual-level model to postulate a multi-level model of IT usage. The multi-level model was then empirically validated using multi-level data collected from 128 end users and 26 managers in 26 firms in China regarding their use of enterprise resource planning systems and analysed using the multi-level structural equation modelling (MSEM) technique. We demonstrate the utility of MSEM analysis of multi-level data relative to the more common structural equation modelling analysis of single-level data and show how single-level data can be aggregated to approximate multi-level analysis when multi-level data collection is not possible. We hope that this article will motivate future scholars to employ multi-level data and multi-level analysis for understanding organisational phenomena that are truly multi-level in nature.

Spectrometric analyses in comparison to the physiological condition of heavy metal stressed floodplain vegetation in a standardised experiment

NASA Astrophysics Data System (ADS)

Götze, Christian; Jung, András; Merbach, Ines; Wennrich, Rainer; Gläßer, Cornelia

2010-06-01

Floodplain ecosystems are affected by flood dynamics, nutrient supply as well as anthropogenic activities. Heavy metal pollution poses a serious environmental challenge. Pollution transfer from the soil to vegetation is still present at the central location of Elbe River, Germany. The goal of this study was to assess and separate the current heavy metal contamination of the floodplain ecosystem, using spectrometric field and laboratory measurements. A standardized pot experiment with floodplain vegetation in differently contaminated soils provided the basis for the measurements. The dominant plant types of the floodplains are: Urtica dioica, Phalaris arundinacea and Alopecurus pratensis, these were also chemically analysed. Various vegetation indices and methods were used to estimate the red edge position, to normalise the spectral curve of the vegetation and to investigate the potential of different methods for separating plant stress in floodplain vegetation. The main task was to compare spectral bands during phenological phases to find a method to detect heavy metal stress in plants. A multi-level algorithm for the curve parameterisation was developed. Chemo-analytical and ecophysiological parameters of plants were considered in the results and correlated with spectral data. The results of this study show the influence of heavy metals on the spectral characteristics of the focal plants. The developed method (depth CR1730) showed significant relationship between the plants and the contamination.

Observations on the structural degradation of silver during simultaneous exposure to oxidizing and reducing environments

NASA Astrophysics Data System (ADS)

Singh, Prabhakar; Yang, Zhenguo; Viswanathan, Vish; Stevenson, Jeff W.

2004-06-01

The structural stability of silver (Ag) in dual atmosphere exposure conditions, which are representative of solid oxide fuel cell (SOFC) current collector and gas seals, has been examined in the 600 800 °C temperature range. Experiments conducted on Ag tubular sections exposed to flowing H2-3% H2O (inside the tube) and air (outside the tube) showed extensive porosity formation along the grain boundaries in the bulk metal. Similar tubular sections, when exposed to air only (both inside and outside the tube), showed no bulk porosity or structural changes. It is postulated that the porosity formation in the bulk metal is related to the formation of gaseous H2O bubbles due to simultaneous diffusion of hydrogen and oxygen followed by subsequent interaction resulting in the formation of steam. Thermochemical processes that are responsible for structural degradation are presented and discussed. Based on experimental observations, it is concluded that Ag metal may not provide adequate long-term structural stability under a dual-environment condition that is typical of interconnects or gas seals in intermediate temperature SOFCs.

Renewable Wood Pulp Paper Reactor with Hierarchical Micro/Nanopores for Continuous-Flow Nanocatalysis.

PubMed

Koga, Hirotaka; Namba, Naoko; Takahashi, Tsukasa; Nogi, Masaya; Nishina, Yuta

2017-06-22

Continuous-flow nanocatalysis based on metal nanoparticle catalyst-anchored flow reactors has recently provided an excellent platform for effective chemical manufacturing. However, there has been limited progress in porous structure design and recycling systems for metal nanoparticle-anchored flow reactors to create more efficient and sustainable catalytic processes. In this study, traditional paper is used for a highly efficient, recyclable, and even renewable flow reactor by tailoring the ultrastructures of wood pulp. The "paper reactor" offers hierarchically interconnected micro- and nanoscale pores, which can act as convective-flow and rapid-diffusion channels, respectively, for efficient access of reactants to metal nanoparticle catalysts. In continuous-flow, aqueous, room-temperature catalytic reduction of 4-nitrophenol to 4-aminophenol, a gold nanoparticle (AuNP)-anchored paper reactor with hierarchical micro/nanopores provided higher reaction efficiency than state-of-the-art AuNP-anchored flow reactors. Inspired by traditional paper materials, successful recycling and renewal of AuNP-anchored paper reactors were also demonstrated while high reaction efficiency was maintained. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

Renewable Wood Pulp Paper Reactor with Hierarchical Micro/Nanopores for Continuous‐Flow Nanocatalysis

PubMed Central

Namba, Naoko; Takahashi, Tsukasa; Nogi, Masaya; Nishina, Yuta

2017-01-01

Abstract Continuous‐flow nanocatalysis based on metal nanoparticle catalyst‐anchored flow reactors has recently provided an excellent platform for effective chemical manufacturing. However, there has been limited progress in porous structure design and recycling systems for metal nanoparticle‐anchored flow reactors to create more efficient and sustainable catalytic processes. In this study, traditional paper is used for a highly efficient, recyclable, and even renewable flow reactor by tailoring the ultrastructures of wood pulp. The “paper reactor” offers hierarchically interconnected micro‐ and nanoscale pores, which can act as convective‐flow and rapid‐diffusion channels, respectively, for efficient access of reactants to metal nanoparticle catalysts. In continuous‐flow, aqueous, room‐temperature catalytic reduction of 4‐nitrophenol to 4‐aminophenol, a gold nanoparticle (AuNP)‐anchored paper reactor with hierarchical micro/nanopores provided higher reaction efficiency than state‐of‐the‐art AuNP‐anchored flow reactors. Inspired by traditional paper materials, successful recycling and renewal of AuNP‐anchored paper reactors were also demonstrated while high reaction efficiency was maintained. PMID:28394501

Cooling rate dependence of structural order in Al 90Sm 10 metallic glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Yang; Zhang, Yue; Zhang, Feng

2016-07-07

Here, the atomic structure of Al 90Sm 10 metallic glass is studied using molecular dynamics simulations. By performing a long sub-T g annealing, we developed a glass model closer to the experiments than the models prepared by continuous cooling. Using the cluster alignment method, we found that “3661” cluster is the dominating short-range order in the glass samples. The connection and arrangement of “3661” clusters, which define the medium-range order in the system, are enhanced significantly in the sub-T g annealed sample as compared with the fast cooled glass samples. Unlike some strong binary glass formers such as Cu 64.5Zrmore » 35.5, the clusters representing the short-range order do not form an interconnected interpenetrating network in Al 90Sm 10, which has only marginal glass formability.« less

Cooling rate dependence of structural order in Al{sub 90}Sm{sub 10} metallic glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Yang; Ames Laboratory, US Department of Energy, Ames, Iowa 50011; Zhang, Yue

2016-07-07

The atomic structure of Al{sub 90}Sm{sub 10} metallic glass is studied using molecular dynamics simulations. By performing a long sub-T{sub g} annealing, we developed a glass model closer to the experiments than the models prepared by continuous cooling. Using the cluster alignment method, we found that “3661” cluster is the dominating short-range order in the glass samples. The connection and arrangement of “3661” clusters, which define the medium-range order in the system, are enhanced significantly in the sub-T{sub g} annealed sample as compared with the fast cooled glass samples. Unlike some strong binary glass formers such as Cu{sub 64.5}Zr{sub 35.5},more » the clusters representing the short-range order do not form an interconnected interpenetrating network in Al{sub 90}Sm{sub 10,} which has only marginal glass formability.« less

Evaluating print performance of Sn-Ag-Cu lead-free solder pastes used in electronics assembly process

NASA Astrophysics Data System (ADS)

Mallik, S.; Bauer, R.; Hübner, F.; Ekere, N. N.

2011-01-01

Solder paste is the most widely used interconnection material in the electronic assembly process for attaching electronic components/devices directly onto the surface of printed circuit boards, using stencil printing process. This paper evaluates the performance of three different commercially available Sn-Ag-Cu solder pastes formulated with different particle size distributions (PSD), metal content and alloy composition. A series of stencil printing tests were carried out using a specially designed stencil of 75 μm thickness and apertures of 300×300 μm2 dimension and 500 μm pitch sizes. Solder paste printing behaviors were found related to attributes such as slumping and surface tension and printing performance was correlated with metal content and PSD. The results of the study should benefit paste manufacturers and SMT assemblers to improve their products and practices.

Heterogeneous integration of low-temperature metal-oxide TFTs

NASA Astrophysics Data System (ADS)

Schuette, Michael L.; Green, Andrew J.; Leedy, Kevin D.; McCandless, Jonathan P.; Jessen, Gregg H.

2017-02-01

The breadth of circuit fabrication opportunities enabled by metal-oxide thin-film transistors (MO-TFTs) is unprecedented. Large-area deposition techniques and high electron mobility are behind their adoption in the display industry, and substrate agnosticism and low process temperatures enabled the present wave of flexible electronics research. Reports of circuits involving complementaryMO-TFTs, oxide-organic hybrid combinations, and even MO-TFTs integrated onto Si LSI back end of line interconnects demonstrate this technology's utility in 2D and 3D monolithic heterogeneous integration (HI). In addition to a brief literature review focused on functional HI between MO-TFTs and a variety of dissimilar active devices, we share progress toward integrating MO-TFTs with compound semiconductor devices, namely GaN HEMTs. A monolithically integrated cascode topology was used to couple a HEMT's >200 V breakdown characteristic with the gate driving characteristic of an IGZO TFT, effectively shifting the HEMT threshold voltage from -3 V to +1 V.

Fabrication and electrical characterization of partially metallized vias fabricated by inkjet

NASA Astrophysics Data System (ADS)

Khorramdel, B.; Mäntysalo, M.

2016-04-01

Through silicon vias (TSVs), acting as vertical interconnections, play an important role in micro-electro-mechanical systems (MEMS) 3D wafer level packaging. Today, taking advantage of nanoparticle inks, inkjet technologies as local filling methods could be used to plate the inside the vias with a conductive material, rather than using a current method, such as chemical vapor deposition or electrolytic growth. This could decrease the processing time, cost and waste material produced. In this work, we have fabricated and demonstrated electrical characterization of TSVs with a top diameter of 85 μm, and partially metallized on their inside walls using silver nanoparticle ink and drop-on-demand inkjet printing. Electrical measurement showed that the resistance of a single via with a void free coverage from top to bottom could be less than 4 Ω, which is still acceptable for MEMS applications.

An Electrically Switchable Metal-Organic Framework

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandez, CA; Martin, PC; Schaef, T

2014-08-19

Crystalline metal organic framework (MOF) materials containing interconnected porosity can be chemically modified to promote stimulus-driven (light, magnetic or electric fields) structural transformations that can be used in a number of devices. Innovative research strategies are now focused on understanding the role of chemical bond manipulation to reversibly alter the free volume in such structures of critical importance for electro-catalysis, molecular electronics, energy storage technologies, sensor devices and smart membranes. In this letter, we study the mechanism for which an electrically switchable MOF composed of Cu(TCNQ) (TCNQ = 7,7,8,8-tetracyanoquinodimethane) transitions from a high-resistance state to a conducting state in amore » reversible fashion by an applied potential. The actual mechanism for this reversible electrical switching is still not understood even though a number of reports are available describing the application of electric-field-induced switching of Cu(TCNQ) in device fabrication.« less

An Electrically Switchable Metal-Organic Framework

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandez, Carlos A.; Martin, Paul F.; Schaef, Herbert T.

2014-08-19

Crystalline metal organic framework (MOF) materials containing interconnected porosity can be chemically modified to promote stimulus-driven (light, magnetic or electric fields) structural transformations that can be used in a number of devices. Innovative research strategies are now focused on understanding the role of chemical bond manipulation to reversibly alter the free volume in such structures of critical importance for electro-catalysis, molecular electronics, energy storage technologies, sensor devices and smart membranes. In this letter, we study the mechanism for which an electrically switchable MOF composed of Cu(TCNQ) (TCNQ 5 7,7,8,8-tetracyanoquinodimethane) transitions from a high-resistance state to a conducting state in amore » reversible fashion by an applied potential. The actual mechanism for this reversible electrical switching is still not understood even though a number of reports are available describing the application of electric-field-induced switching of Cu(TCNQ) in device fabrication.« less

Resistivity scaling and electron relaxation times in metallic nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moors, Kristof, E-mail: kristof@itf.fys.kuleuven.be; Imec, Kapeldreef 75, B-3001 Leuven; Sorée, Bart

2014-08-14

We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation of the distribution function and the effective mass approximation for the conducting electrons. The relaxation times are calculated exactly, using Fermi's golden rule, resulting in a correct relaxation time for every sub-band state contributing to the transport. In general, the relaxation time strongly depends on the sub-band state, something that remained unclear with the methods of previous work. The resistivitymore » scaling is obtained for different roughness and grain-boundary properties, showing large differences in scaling behavior and relaxation times. Our model clearly indicates that the resistivity is dominated by grain-boundary scattering, easily surpassing the surface roughness contribution by a factor of 10.« less

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

PubMed

Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

2014-10-20

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

CMOS chip planarization by chemical mechanical polishing for a vertically stacked metal MEMS integration

NASA Astrophysics Data System (ADS)

Lee, Hocheol; Miller, Michele H.; Bifano, Thomas G.

2004-01-01

In this paper we present the planarization process of a CMOS chip for the integration of a microelectromechanical systems (MEMS) metal mirror array. The CMOS chip, which comes from a commercial foundry, has a bumpy passivation layer due to an underlying aluminum interconnect pattern (1.8 µm high), which is used for addressing individual micromirror array elements. To overcome the tendency for tilt error in the CMOS chip planarization, the approach is to sputter a thick layer of silicon nitride at low temperature and to surround the CMOS chip with dummy silicon pieces that define a polishing plane. The dummy pieces are first lapped down to the height of the CMOS chip, and then all pieces are polished. This process produced a chip surface with a root-mean-square flatness error of less than 100 nm, including tilt and curvature errors.

Accelerated reliability testing of highly aligned single-walled carbon nanotube networks subjected to DC electrical stressing.

PubMed

Strus, Mark C; Chiaramonti, Ann N; Kim, Young Lae; Jung, Yung Joon; Keller, Robert R

2011-07-01

We investigate the electrical reliability of nanoscale lines of highly aligned, networked, metallic/semiconducting single-walled carbon nanotubes (SWCNTs) fabricated through a template-based fluidic assembly process. We find that these SWCNT networks can withstand DC current densities larger than 10 MA cm(-2) for several hours and, in some cases, several days. We develop test methods that show that the degradation rate, failure predictability and total device lifetime can be linked to the initial resistance. Scanning electron and transmission electron microscopy suggest that fabrication variability plays a critical role in the rate of degradation, and we offer an empirical method of quickly determining the long-term performance of a network. We find that well-fabricated lines subject to constant electrical stress show a linear accumulation of damage reminiscent of electromigration in metallic interconnects, and we explore the underlying physical mechanisms that could cause such behavior.

An Electrically Switchable Metal-Organic Framework

NASA Astrophysics Data System (ADS)

Fernandez, Carlos A.; Martin, Paul C.; Schaef, Todd; Bowden, Mark E.; Thallapally, Praveen K.; Dang, Liem; Xu, Wu; Chen, Xilin; McGrail, B. Peter

2014-08-01

Crystalline metal organic framework (MOF) materials containing interconnected porosity can be chemically modified to promote stimulus-driven (light, magnetic or electric fields) structural transformations that can be used in a number of devices. Innovative research strategies are now focused on understanding the role of chemical bond manipulation to reversibly alter the free volume in such structures of critical importance for electro-catalysis, molecular electronics, energy storage technologies, sensor devices and smart membranes. In this letter, we study the mechanism for which an electrically switchable MOF composed of Cu(TCNQ) (TCNQ = 7,7,8,8-tetracyanoquinodimethane) transitions from a high-resistance state to a conducting state in a reversible fashion by an applied potential. The actual mechanism for this reversible electrical switching is still not understood even though a number of reports are available describing the application of electric-field-induced switching of Cu(TCNQ) in device fabrication.

Flip chip bumping technology—Status and update

NASA Astrophysics Data System (ADS)

Juergen Wolf, M.; Engelmann, Gunter; Dietrich, Lothar; Reichl, Herbert

2006-09-01

Flip chip technology is a key driver for new complex system architectures and high-density packaging, e.g. sensor or pixel devices. Bumped wafers/dice as key elements become very important in terms of general availability at low cost, high yield and quality level. Today, different materials, e.g. Au, Ni, AuSn, SnAg, SnAgCu, SnCu, etc., are used for flip chip interconnects and different bumping approaches are available. Electroplating is the technology of choice for high-yield wafer bumping for small bump sizes and pitches. Lead-free solder bumps require an increase in knowledge in the field of under bump metallization (UBM) and the interaction of bump and substrate metallization, the formation and growth of intermetallic compounds (IMCs) during liquid- and solid-phase reactions. Results of a new bi-layer UBM of Ni-Cu which is especially designed for small-sized lead-free solder bumps will be discussed.

Dangling-bond logic gates on a Si(100)-(2 × 1)-H surface.

PubMed

Kawai, Hiroyo; Ample, Francisco; Wang, Qing; Yeo, Yong Kiat; Saeys, Mark; Joachim, Christian

2012-03-07

Atomic-scale Boolean logic gates (LGs) with two inputs and one output (i.e. OR, NOR, AND, NAND) were designed on a Si(100)-(2 × 1)-H surface and connected to the macroscopic scale by metallic nano-pads physisorbed on the Si(100)-(2 × 1)-H surface. The logic inputs are provided by saturating and unsaturating two surface Si dangling bonds, which can, for example, be achieved by adding and extracting two hydrogen atoms per input. Quantum circuit design rules together with semi-empirical elastic-scattering quantum chemistry transport calculations were used to determine the output current intensity of the proposed switches and LGs when they are interconnected to the metallic nano-pads by surface atomic-scale wires. Our calculations demonstrate that the proposed devices can reach ON/OFF ratios of up to 2000 for a running current in the 10 µA range.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Nelson S.; Sarobol, Pylin; Cook, Adam

There is a rising interest in developing functional electronics using additively manufactured components. Considerations in materials selection and pathways to forming hybrid circuits and devices must demonstrate useful electronic function; must enable integration; and must complement the complex shape, low cost, high volume, and high functionality of structural but generally electronically passive additively manufactured components. This article reviews several emerging technologies being used in industry and research/development to provide integration advantages of fabricating multilayer hybrid circuits or devices. First, we review a maskless, noncontact, direct write (DW) technology that excels in the deposition of metallic colloid inks for electrical interconnects.more » Second, we review a complementary technology, aerosol deposition (AD), which excels in the deposition of metallic and ceramic powder as consolidated, thick conformal coatings and is additionally patternable through masking. As a result, we show examples of hybrid circuits/devices integrated beyond 2-D planes, using combinations of DW or AD processes and conventional, established processes.« less

Polymer-Silica Nanocomposites: A Versatile Platform for Multifunctional Materials

NASA Astrophysics Data System (ADS)

Chiu, Chi-Kai

Solution sol-gel synthesis is a versatile approach to create polymer-silica nanocomposite materials. The solution-to-solid transformation results in a solid consisting of interconnected nanoporous structure in 3D space, making it the ideal material for filtration, encapsulation, optics, electronics, drug release, and biomaterials, etc. Although the pore between nano and meso size may be tunable using different reaction conditions, the intrinsic properties such as limited diffusion within pore structure, complicated interfacial interactions at the pore surfaces, shrinkage and stress-induced cracking and brittleness have limited the applications of this material. To overcome these problems, diffusion, pore size, shrinkage and stress-induced defects need further investigation. Thus, the presented thesis will address these important questions such as whether these limitations can be utilized as the novel method to create new materials and lead to new applications. First, the behaviors of polymers such as poly(ethylene glycol) inside the silica pores are examined by studying the nucleation and growth of AgCl at the surface of the porous matrix. The pore structure and the pressure induced by the shrinkage affect have been found to induce the growth of AgCl nanocrystals. When the same process is carried out at 160 °C, silver metallization is possible. Due to the shrinkage-induced stresses, the polymer tends to move into open crack spaces and exterior surfaces, forming interconnected silver structure. This interconnected silver structure is very unique because its density is not related to the size scale of nanopore structures. These findings suggest that it is possible to utilize defect surface of silica material as the template to create interconnected silver structure. When the scale is small, polymer may no longer be needed if the diffusion length of Ag is more than the size of silica particles. To validate our assumption, monoliths of sol-gel sample containing AgNO3 was ground into two different sizes of powder followed by powder pressing, heat-treating and etching. A new robust porous silver foam was then successfully made. By combining the results from room temperature and high temperature processes, we further study the patterned silver nanoparticles arrays in order to examine how mobility of silver can be controlled on a quantifiable scale. Furthermore, we have identified a thiolcontaining sol-gel precursor to control the affinity between silver and silica matrix. Lastly, the effects of interfacial interactions between sol-gel silica and other nanocomposite components and the effect of thickness of the sol-gel layer on mechanical properties were investigated. These studies were applied to the biomimetic hydroxyapatite-gelatin system. We have found that by limiting the thickness while maintaining interfacial interactions of the sol-gel layer, a unique moldable property and short hardening time from these nanocomposites can be achieved without compromising its biocompatibility. Their biocompatibility has been proven based on the in vitro and in vivo testing of these materials. In conclusion, the present study has demonstrated that polymer-silica nanocomposite is a versatile platform to carry out applications in nanocrystal growth, nanoporous metals, metal-ceramic composites, nano-imprint thin film, and bone grafts. These important findings not only provide new insights into nanocomposites but also give new meanings to the previously functional-limited sol-gel materials.

Multilevel Interventions: Measurement and Measures

PubMed Central

Charns, Martin P.; Alligood, Elaine C.; Benzer, Justin K.; Burgess, James F.; Mcintosh, Nathalie M.; Burness, Allison; Partin, Melissa R.; Clauser, Steven B.

2012-01-01

Background Multilevel intervention research holds the promise of more accurately representing real-life situations and, thus, with proper research design and measurement approaches, facilitating effective and efficient resolution of health-care system challenges. However, taking a multilevel approach to cancer care interventions creates both measurement challenges and opportunities. Methods One-thousand seventy two cancer care articles from 2005 to 2010 were reviewed to examine the state of measurement in the multilevel intervention cancer care literature. Ultimately, 234 multilevel articles, 40 involving cancer care interventions, were identified. Additionally, literature from health services, social psychology, and organizational behavior was reviewed to identify measures that might be useful in multilevel intervention research. Results The vast majority of measures used in multilevel cancer intervention studies were individual level measures. Group-, organization-, and community-level measures were rarely used. Discussion of the independence, validity, and reliability of measures was scant. Discussion Measurement issues may be especially complex when conducting multilevel intervention research. Measurement considerations that are associated with multilevel intervention research include those related to independence, reliability, validity, sample size, and power. Furthermore, multilevel intervention research requires identification of key constructs and measures by level and consideration of interactions within and across levels. Thus, multilevel intervention research benefits from thoughtful theory-driven planning and design, an interdisciplinary approach, and mixed methods measurement and analysis. PMID:22623598

On the Multilevel Nature of Meta-Analysis: A Tutorial, Comparison of Software Programs, and Discussion of Analytic Choices.

PubMed

Pastor, Dena A; Lazowski, Rory A

2018-01-01

The term "multilevel meta-analysis" is encountered not only in applied research studies, but in multilevel resources comparing traditional meta-analysis to multilevel meta-analysis. In this tutorial, we argue that the term "multilevel meta-analysis" is redundant since all meta-analysis can be formulated as a special kind of multilevel model. To clarify the multilevel nature of meta-analysis the four standard meta-analytic models are presented using multilevel equations and fit to an example data set using four software programs: two specific to meta-analysis (metafor in R and SPSS macros) and two specific to multilevel modeling (PROC MIXED in SAS and HLM). The same parameter estimates are obtained across programs underscoring that all meta-analyses are multilevel in nature. Despite the equivalent results, not all software programs are alike and differences are noted in the output provided and estimators available. This tutorial also recasts distinctions made in the literature between traditional and multilevel meta-analysis as differences between meta-analytic choices, not between meta-analytic models, and provides guidance to inform choices in estimators, significance tests, moderator analyses, and modeling sequence. The extent to which the software programs allow flexibility with respect to these decisions is noted, with metafor emerging as the most favorable program reviewed.

Self-similar and fractal design for stretchable electronics

DOEpatents

Rogers, John A.; Fan, Jonathan; Yeo, Woon-Hong; Su, Yewang; Huang, Yonggang; Zhang, Yihui

2017-04-04

The present invention provides electronic circuits, devices and device components including one or more stretchable components, such as stretchable electrical interconnects, electrodes and/or semiconductor components. Stretchability of some of the present systems is achieved via a materials level integration of stretchable metallic or semiconducting structures with soft, elastomeric materials in a configuration allowing for elastic deformations to occur in a repeatable and well-defined way. The stretchable device geometries and hard-soft materials integration approaches of the invention provide a combination of advance electronic function and compliant mechanics supporting a broad range of device applications including sensing, actuation, power storage and communications.

Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

DOEpatents

Han, Jung; Su, Jie

2008-08-05

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L.; Deceglie, Michael G.; Stradins, Paul

Three-terminal (3T) tandem cells fabricated by combining an interdigitated back contact (IBC) Si device with a wider bandgap top cell have the potential to provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects between cells. Here we develop a two dimensional device physics model to study the behavior of IBC Si solar cells operated in a 3T configuration. We investigate how different cell designs impact device performance and discuss the analysis protocol used to understand and optimize power produced from a single junction, 3T device.

Encapsulants for protecting MEMS devices during post-packaging release etch

DOEpatents

Peterson, Kenneth A.

2005-10-18

The present invention relates to methods to protect a MEMS or microsensor device through one or more release or activation steps in a "package first, release later" manufacturing scheme: This method of fabrication permits wirebonds, other interconnects, packaging materials, lines, bond pads, and other structures on the die to be protected from physical, chemical, or electrical damage during the release etch(es) or other packaging steps. Metallic structures (e.g., gold, aluminum, copper) on the device are also protected from galvanic attack because they are protected from contact with HF or HCL-bearing solutions.

Production of porous coating on a prosthesis

DOEpatents

Sump, Kenneth R.

1987-01-01

Preselected surface areas of a prosthesis are covered by a blend of matching primary metallic particles and expendable particles. The particles are compressed and heated to assure that deformation and metallurgical bonding occurs between them and between the primary particles and the surface boundaries of the prosthesis. Porosity is achieved by removal of the expendable material. The result is a coating including discrete bonded particles separated by a network of interconnected voids presenting a homogeneous porous coating about the substrate. It has strength suitable for bone implant usage without intermediate adhesives, and adequate porosity to promote subsequent bone ingrowth.

Electron Beam-Induced Writing of Nanoscale Iron Wires on a Functional Metal Oxide

PubMed Central

2013-01-01

Electron beam-induced surface activation (EBISA) has been used to grow wires of iron on rutile TiO2(110)-(1 × 1) in ultrahigh vacuum. The wires have a width down to ∼20 nm and hence have potential utility as interconnects on this dielectric substrate. Wire formation was achieved using an electron beam from a scanning electron microscope to activate the surface, which was subsequently exposed to Fe(CO)5. On the basis of scanning tunneling microscopy and Auger electron spectroscopy measurements, the activation mechanism involves electron beam-induced surface reduction and restructuring. PMID:24159366

Process Development for Automated Solar Cell and Module Production. Task 4: Automated Array Assembly

NASA Technical Reports Server (NTRS)

1979-01-01

A baseline sequence for the manufacture of solar cell modules was specified. Starting with silicon wafers, the process goes through damage etching, texture etching, junction formation, plasma edge etch, aluminum back surface field formation, and screen printed metallization to produce finished solar cells. The cells were then series connected on a ribbon and bonded into a finished glass tedlar module. A number of steps required additional developmental effort to verify technical and economic feasibility. These steps include texture etching, plasma edge etch, aluminum back surface field formation, array layup and interconnect, and module edge sealing and framing.

Packaging of solid state devices

DOEpatents

Glidden, Steven C.; Sanders, Howard D.

2006-01-03

A package for one or more solid state devices in a single module that allows for operation at high voltage, high current, or both high voltage and high current. Low thermal resistance between the solid state devices and an exterior of the package and matched coefficient of thermal expansion between the solid state devices and the materials used in packaging enables high power operation. The solid state devices are soldered between two layers of ceramic with metal traces that interconnect the devices and external contacts. This approach provides a simple method for assembling and encapsulating high power solid state devices.

Oxidized Ni/Au Transparent Electrode in Efficient CH3 NH3 PbI3 Perovskite/Fullerene Planar Heterojunction Hybrid Solar Cells.

PubMed

Lai, Wei-Chih; Lin, Kun-Wei; Wang, Yuan-Ting; Chiang, Tsung-Yu; Chen, Peter; Guo, Tzung-Fang

2016-05-01

The successful application of a Ni/Au transparent electrode for fabricating efficient perovskite-based solar cells is demonstrated. Through interdiffusion of the Ni/Au bilayer, Au forms an interconnected metallic network structure as the transparent electrode. Ni diffuses to the bilayer surface and oxidizes into NiOx becoming an appropriate electrode interlayer. These ITO- and PSS-free devices have potential applications in the design of future cost-effective, low-weight, and stable solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microcellular carbon foam and method

DOEpatents

Simandl, R.F.; Brown, J.D.

1993-12-07

A microcellular carbon foam is characterized by a density in the range of about 30 to 1000 mg/cm[sup 3], substantially uniform distribution of cell sizes of diameters less than 100 [mu]m with a majority of the cells being of a diameter of less than about 10 [mu]m, well interconnected strut morphology providing open porosity, and an expanded d(002) X-ray turbostatic spacing greater than 3.50 angstroms. The precursor for the carbon foam is prepared by the phase inversion of polyacrylonitrile in a solution consisting essentially of at least one alkali metal halide and a phase inversion solvent for the polyacrylonitrile.

Microcellular carbon foam and method

DOEpatents

Simandl, Ronald F.; Brown, John D.

1994-01-01

A microcellular carbon foam characterized by a density in the range of about 30 to 1000 mg/cm.sup.3, substantially uniform distribution of cell sizes of diameters less than 100 .mu.m with a majority of the cells being of a diameter of less than about 10 .mu.m, well interconnected strut morphology providing open porosity, and an expanded d(002) X-ray turbostatic spacing greater than 3.50 angstroms. The precursor for the carbon foam is prepared by the phase inversion of polyacrylonitrile in a solution consisting essentially of at least one alkali metal halide and a phase inversion solvent for the polyacrylonitrile.

Microcellular carbon foam and method

DOEpatents

Simandl, Ronald F.; Brown, John D.

1993-01-01

A microcellular carbon foam characterized by a density in the range of about 30 to 1000 mg/cm.sup.3, substantially uniform distribution of cell sizes of diameters less than 100 .mu.m with a majority of the cells being of a diameter of less than about 10 .mu.m, well interconnected strut morphology providing open porosity, and an expanded d(002) X-ray turbostatic spacing greater than 3.50 angstroms. The precursor for the carbon foam is prepared by the phase inversion of polyacrylonitrile in a solution consisting essentially of at least one alkali metal halide and a phase inversion solvent for the polyacrylonitrile.

Fully optical backplane system using novel optical plug and slot

NASA Astrophysics Data System (ADS)

Cho, In-Kui; Ahn, Seung-Ho; Lee, Woo-Jin; Han, Sang-Pil; Kim, Jin-Tae; Choi, Chun-Ki; Shin, Kyung-Up; Yoon, Keun Byoung; Jeong, Myung-Yung; Park, Hyo Hoon

2005-10-01

A fully optical PCB with transmitter/receiver system boards and optical bakcplane was prepared, which is board-to-board interconnection by an optical slot. We report a 10 Gb/s PRBS NRZ data transmission between transmitter system board and optical backplane embedded multimode polymeric waveguide arrays. The basic concept of the optical PCB is as follows; 1) Metal optical bench is integrated with optoelectronic devices, driver and receiver circuits, polymeric waveguide and access line PCB module. 2) Multimode polymeric waveguide inside an optical backplane, which is embedded into PCB, 3) Optical slot and plug for high-density (channel pitch : 500 um) board-to-board interconnection. The polymeric waveguide technology can be used for transmission of data between transmitter/receiver processing boards and backplane boards. The main components are low-loss tapered polymeric waveguides and a novel optical plug and slot for board-to-board interconnections, respectively. The transmitter/receiver processing boards are designed as plug types, and can be easily plugged-in and -out at an optical backplane board. The optical backplane boards are prepared by employing the lamination processes for conventional electrical PCBs. A practical optical backplane system was implemented with two processing boards and an optical backplane. As connection components between the transmitter/receiver processing boards and backplane board, optical slots made of a 90°-bending structure-embedded optical plug was used. A 10 Gb/s data link was successfully demonstrated. The bit error rate (BER) was determined and is 5.6×10 -9(@10Gb/s) and the BER of 8 Gb/s is < 10 -12.

Porous honeycomb structures formed from interconnected MnO2 sheets on CNT-coated substrates for flexible all-solid-state supercapacitors

NASA Astrophysics Data System (ADS)

Ko, Wen-Yin; Chen, You-Feng; Lu, Ke-Ming; Lin, Kuan-Jiuh

2016-01-01

The use of lightweight and easily-fabricated MnO2/carbon nanotube (CNT)-based flexible networks as binder-free electrodes and a polyvinyl alcohol/H2SO4 electrolyte for the formation of stretchable solid-state supercapacitors was examined. The active electrodes were fabricated from 3D honeycomb porous MnO2 assembled from cross-walled and interconnected sheet-architectural MnO2 on CNT-based plastic substrates (denoted as honeycomb MnO2/CNT textiles).These substrates were fabricated through a simple two-step procedure involving the coating of multi-walled carbon nanotubes (MWCNTs) onto commercial textiles by a dipping-drying process and subsequent electrodeposition of the interconnected MnO2 sheets onto the MWCNT-coated textile. With such unique MnO2 architectures integrated onto CNT flexible films, good performance was achieved with a specific capacitance of 324 F/g at 0.5 A/g. A maximum energy density of 7.2 Wh/kg and a power density as high as 3.3 kW/kg were exhibited by the honeycomb MnO2/CNT network device, which is comparable to the performance of other carbon-based and metal oxide/carbon-based solid-state supercapacitor devices. Specifically, the long-term cycling stability of this material is excellent, with almost no loss of its initial capacitance and good Coulombic efficiency of 82% after 5000 cycles. These impressive results identify these materials as a promising candidate for use in environmentally friendly, low-cost, and high-performance flexible energy-storage devices.

Porous honeycomb structures formed from interconnected MnO2 sheets on CNT-coated substrates for flexible all-solid-state supercapacitors

PubMed Central

Ko, Wen-Yin; Chen, You-Feng; Lu, Ke-Ming; Lin, Kuan-Jiuh

2016-01-01

The use of lightweight and easily-fabricated MnO2/carbon nanotube (CNT)-based flexible networks as binder-free electrodes and a polyvinyl alcohol/H2SO4 electrolyte for the formation of stretchable solid-state supercapacitors was examined. The active electrodes were fabricated from 3D honeycomb porous MnO2 assembled from cross-walled and interconnected sheet-architectural MnO2 on CNT-based plastic substrates (denoted as honeycomb MnO2/CNT textiles).These substrates were fabricated through a simple two-step procedure involving the coating of multi-walled carbon nanotubes (MWCNTs) onto commercial textiles by a dipping-drying process and subsequent electrodeposition of the interconnected MnO2 sheets onto the MWCNT-coated textile. With such unique MnO2 architectures integrated onto CNT flexible films, good performance was achieved with a specific capacitance of 324 F/g at 0.5 A/g. A maximum energy density of 7.2 Wh/kg and a power density as high as 3.3 kW/kg were exhibited by the honeycomb MnO2/CNT network device, which is comparable to the performance of other carbon-based and metal oxide/carbon-based solid-state supercapacitor devices. Specifically, the long-term cycling stability of this material is excellent, with almost no loss of its initial capacitance and good Coulombic efficiency of 82% after 5000 cycles. These impressive results identify these materials as a promising candidate for use in environmentally friendly, low-cost, and high-performance flexible energy-storage devices. PMID:26726724

Direct observation of macrostructure formation of hierarchically structured meso-macroporous aluminosilicates with 3D interconnectivity by optical microscope.

PubMed

Lemaire, Arnaud; Rooke, Joanna Claire; Chen, Li-Hua; Su, Bao-Lian

2011-03-15

Hierarchically structured spongy meso-macroporous aluminosilicates with high tetrahedral aluminum content were synthesized from a mixture of single molecular alkoxide precursor, (sec-BuO)2-Al-O-Si(OEt)3, already containing Si-O-Al bonds, and a silica coreactant, tetramethoxysilane (TMOS). The spontaneous byproduct templated macroporous structure formation has been directly visualized using in situ high-resolution optical microscopy (OM), allowing the crucial observation of a microbubble dispersion which is directly correlated to the macrostructure observed by electronic microscopies (SEM and TEM). This discovery leads to a comparative study with meso-macroporous pure metal oxide and to a proposal of the formation mechanism of meso-macroporous aluminosilicates with 3D interconnectivity. The aluminosilicate phase/microbubbles emulsion is produced by a phase separation process occurring between the aluminosilicate nanoparticles and the liquid hydrolysis-condensation reaction byproducts (water, methanol, ethanol, and butanol). The use of alkoxysilane improves the heterocondensation rates between the highly reactive aluminum alkoxide part of the single precursor and added silica species but, above all, leads to the spontaneous generation of an unusual meso-macroporosity in alkaline media. The particles obtained at pH = 13.0 featured regular micrometer-sized macrospheres separated by very thin mesoporous walls and connected by submicrometric openings, providing a 3D interconnectivity. The slight increase in pH value to 13.5 induced significant modifications in morphology and textural properties due to the slower gelification process of the aluminosilicate phase, resulting in the formation of an aluminosilicate material constituted of 1-2 µm large independent hollow mesoporous spheres.

Metal oxide multilayer hard mask system for 3D nanofabrication

NASA Astrophysics Data System (ADS)

Han, Zhongmei; Salmi, Emma; Vehkamäki, Marko; Leskelä, Markku; Ritala, Mikko

2018-02-01

We demonstrate the preparation and exploitation of multilayer metal oxide hard masks for lithography and 3D nanofabrication. Atomic layer deposition (ALD) and focused ion beam (FIB) technologies are applied for mask deposition and mask patterning, respectively. A combination of ALD and FIB was used and a patterning procedure was developed to avoid the ion beam defects commonly met when using FIB alone for microfabrication. ALD grown Al2O3/Ta2O5/Al2O3 thin film stacks were FIB milled with 30 keV gallium ions and chemically etched in 5% tetramethylammonium hydroxide at 50 °C. With metal evaporation, multilayers consisting of amorphous oxides Al2O3 and Ta2O5 can be tailored for use in 2D lift-off processing, in preparation of embedded sub-100 nm metal lines and for multilevel electrical contacts. Good pattern transfer was achieved by lift-off process from the 2D hard mask for micro- and nano-scaled fabrication. As a demonstration of the applicability of this method to 3D structures, self-supporting 3D Ta2O5 masks were made from a film stack on gold particles. Finally, thin film resistors were fabricated by utilizing controlled stiction of suspended Ta2O5 structures.

Translating multilevel theory into multilevel research: Challenges and opportunities for understanding the social determinants of psychiatric disorders

PubMed Central

Dunn, Erin C.; Masyn, Katherine E.; Yudron, Monica; Jones, Stephanie M.; Subramanian, S.V.

2014-01-01

The observation that features of the social environment, including family, school, and neighborhood characteristics, are associated with individual-level outcomes has spurred the development of dozens of multilevel or ecological theoretical frameworks in epidemiology, public health, psychology, and sociology, among other disciplines. Despite the widespread use of such theories in etiological, intervention, and policy studies, challenges remain in bridging multilevel theory and empirical research. This paper set out to synthesize these challenges and provide specific examples of methodological and analytical strategies researchers are using to gain a more nuanced understanding of the social determinants of psychiatric disorders, with a focus on children’s mental health. To accomplish this goal, we begin by describing multilevel theories, defining their core elements, and discussing what these theories suggest is needed in empirical work. In the second part, we outline the main challenges researchers face in translating multilevel theory into research. These challenges are presented for each stage of the research process. In the third section, we describe two methods being used as alternatives to traditional multilevel modeling techniques to better bridge multilevel theory and multilevel research. These are: (1) multilevel factor analysis and multilevel structural equation modeling; and (2) dynamic systems approaches. Through its review of multilevel theory, assessment of existing strategies, and examination of emerging methodologies, this paper offers a framework to evaluate and guide empirical studies on the social determinants of child psychiatric disorders as well as health across the lifecourse. PMID:24469555

Mo/Ti Diffusion Bonding for Making Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Sakamoto, Jeffrey; Kisor, Adam; Caillat, Thierry; Lara, Liana; Ravi, Vilupanur; Firdosy, Samad; Fleuiral, Jean-Pierre

2007-01-01

An all-solid-state diffusion bonding process that exploits the eutectoid reaction between molybdenum and titanium has been developed for use in fabricating thermoelectric devices based on skutterudite compounds. In essence, the process is one of heating a flat piece of pure titanium in contact with a flat piece of pure molybdenum to a temperature of about 700 C while pushing the pieces together with a slight pressure [a few psi (of the order of 10 kPa)]. The process exploits the energy of mixing of these two metals to form a strong bond between them. These two metals were selected partly because the bonds formed between them are free of brittle intermetallic phases and are mechanically and chemically stable at high temperatures. The process is a solution of the problem of bonding hot-side metallic interconnections (denoted hot shoes in thermoelectric jargon) to titanium-terminated skutterudite n and p legs during the course of fabrication of a unicouple, which is the basic unit cell of a thermoelectric device (see figure). The hot-side operating temperature required for a skutterudite thermoelectric device is 700 C. This temperature precludes the use of brazing to attach the hot shoe; because brazing compounds melt at lower temperatures, the hot shoe would become detached during operation. Moreover, the decomposition temperature of one of the skutterudite compounds is 762 C; this places an upper limit on the temperature used in bonding the hot shoe. Molybdenum was selected as the interconnection metal because the eutectoid reaction between it and the titanium at the ends of the p and n legs has characteristics that are well suited for this application. In addition to being suitable for use in the present bonding process, molybdenum has high electrical and thermal conductivity and excellent thermal stability - characteristics that are desired for hot shoes of thermoelectric devices. The process takes advantage of the chemical potential energy of mixing between molybdenum and titanium. These metals have a strong affinity for each other. They are almost completely soluble in each other and remain in the solid state at temperatures above the eutectoid temperature of 695 C. As a result, bonds formed by interdiffusion of molybdenum and titanium are mechanically stable at and well above the original bonding temperature of about 700 C. Inasmuch as the bonds are made at approximately the operating temperature, thermomechanical stresses associated with differences in thermal expansion are minimized.

Anticorrosive, Ultralight, and Flexible Carbon-Wrapped Metallic Nanowire Hybrid Sponges for Highly Efficient Electromagnetic Interference Shielding.

PubMed

Wan, Yan-Jun; Zhu, Peng-Li; Yu, Shu-Hui; Sun, Rong; Wong, Ching-Ping; Liao, Wei-Hsin

2018-05-30

Metal-based materials with exceptional intrinsic conductivity own excellent electromagnetic interference (EMI) shielding performance. However, high density, corrosion susceptibility, and poor flexibility of the metal severely restrict their further applications in the areas of aircraft/aerospace, portable and wearable smart electronics. Herein, a lightweight, flexible, and anticorrosive silver nanowire wrapped carbon hybrid sponge (Ag@C) is fabricated and employed as ultrahigh efficiency EMI shielding material. The interconnected Ag@C hybrid sponges provide an effective way for electron transport, leading to a remarkable conductivity of 363.1 S m -1 and superb EMI shielding effectiveness of around 70.1 dB in the frequency range of 8.2-18 GHz, while the density is as low as 0.00382 g cm -3 , which are among the best performances for electrically conductive sponges/aerogels/foams by far. More importantly, the Ag@C sponge surprisingly exhibits super-hydrophobicity and strong corrosion resistance. In addition, the hybrid sponges possess excellent mechanical resilience even with a large strain (90% reversible compressibility) and an outstanding cycling stability, which is far better than the bare metallic aerogels, such as silver nanowire aerogels and copper nanowire foams. This strategy provides a facile methodology to fabricate lightweight, flexible, and anticorrosive metal-based sponge for highly efficient EMI shielding applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

3D spine reconstruction of postoperative patients from multi-level manifold ensembles.

PubMed

Kadoury, Samuel; Labelle, Hubert; Parent, Stefan

2014-01-01

The quantitative assessment of surgical outcomes using personalized anatomical models is an essential task for the treatment of spinal deformities such as adolescent idiopathic scoliosis. However an accurate 3D reconstruction of the spine from postoperative X-ray images remains challenging due to presence of instrumentation (metallic rods and screws) occluding vertebrae on the spine. In this paper, we formulate the reconstruction problem as an optimization over a manifold of articulated spine shapes learned from pathological training data. The manifold itself is represented using a novel data structure, a multi-level manifold ensemble, which contains links between nodes in a single hierarchical structure, as well as links between different hierarchies, representing overlapping partitions. We show that this data structure allows both efficient localization and navigation on the manifold, for on-the-fly building of local nonlinear models (manifold charting). Our reconstruction framework was tested on pre- and postoperative X-ray datasets from patients who underwent spinal surgery. Compared to manual ground-truth, our method achieves a 3D reconstruction accuracy of 2.37 +/- 0.85 mm for postoperative spine models and can deal with severe cases of scoliosis.

Wireless Interconnects for Intra-chip & Inter-chip Transmission

NASA Astrophysics Data System (ADS)

Narde, Rounak Singh

With the emergence of Internet of Things and information revolution, the demand of high performance computing systems is increasing. The copper interconnects inside the computing chips have evolved into a sophisticated network of interconnects known as Network on Chip (NoC) comprising of routers, switches, repeaters, just like computer networks. When network on chip is implemented on a large scale like in Multicore Multichip (MCMC) systems for High Performance Computing (HPC) systems, length of interconnects increases and so are the problems like power dissipation, interconnect delays, clock synchronization and electrical noise. In this thesis, wireless interconnects are chosen as the substitute for wired copper interconnects. Wireless interconnects offer easy integration with CMOS fabrication and chip packaging. Using wireless interconnects working at unlicensed mm-wave band (57-64GHz), high data rate of Gbps can be achieved. This thesis presents study of transmission between zigzag antennas as wireless interconnects for Multichip multicores (MCMC) systems and 3D IC. For MCMC systems, a four-chips 16-cores model is analyzed with only four wireless interconnects in three configurations with different antenna orientations and locations. Return loss and transmission coefficients are simulated in ANSYS HFSS. Moreover, wireless interconnects are designed, fabricated and tested on a 6'' silicon wafer with resistivity of 55O-cm using a basic standard CMOS process. Wireless interconnect are designed to work at 30GHz using ANSYS HFSS. The fabricated antennas are resonating around 20GHz with a return loss of less than -10dB. The transmission coefficients between antenna pair within a 20mm x 20mm silicon die is found to be varying between -45dB to -55dB. Furthermore, wireless interconnect approach is extended for 3D IC. Wireless interconnects are implemented as zigzag antenna. This thesis extends the work of analyzing the wireless interconnects in 3D IC with different configurations of antenna orientations and coolants. The return loss and transmission coefficients are simulated using ANSYS HFSS.

The evolving landscape and climate of western Flores: an environmental context for the archaeological site of Liang Bua.

PubMed

Westaway, K E; Roberts, R G; Sutikna, T; Morwood, M J; Drysdale, R; Zhao, J-x; Chivas, A R

2009-11-01

The rapidly changing landscape of the eastern Indonesian archipelago has evolved at a pace dictated by its tropical climate and its geological and tectonic history. This has produced accelerated karstification, flights of alluvial terraces, and complex, multi-level cave systems. These cave systems sometimes contain a wealth of archaeological evidence, such as the almost complete skeleton of Homo floresiensis found at the site of Liang Bua in western Flores, but this information can only be understood in the context of the geomorphic history of the cave, and the more general geological, tectonic, and environmental histories of the river valley and region. Thus, a reconstruction of the landscape history of the Wae Racang valley using speleothems, geological structure, tectonic uplift, karst, cave, and terrace development, provides the necessary evidence to determine the formation, age, evolution, and influences on the site. This evidence suggests that Liang Bua was formed as two subterranean chambers approximately 600ka, but could not be occupied until approximately 190ka when the Wae Racang wandered to the southern side of the valley, exposing the chamber and depositing alluvial deposits containing artifacts. During the next approximately 190k.yr., the chambers coalesced and evolved into a multi-level and interconnected cave that was subjected to channel erosion and pooling events by the development of sinkholes. The domed morphology of the front chamber accumulated deep sediments containing well stratified archaeological and faunal remains, but ponded water in the chamber further prevented hominin use of the cave until approximately 100ka. These chambers were periodically influenced by river inundation and volcanic activity, whereas the area outside the cave was greatly influenced by glacial phases, which changed humid forest environments into grassland environments. This combined evidence has important implications for the archaeological interpretation of the site.

A palladium-doped ceria@carbon core-sheath nanowire network: a promising catalyst support for alcohol electrooxidation reactions

NASA Astrophysics Data System (ADS)

Tan, Qiang; Du, Chunyu; Sun, Yongrong; Du, Lei; Yin, Geping; Gao, Yunzhi

2015-08-01

A novel palladium-doped ceria and carbon core-sheath nanowire network (Pd-CeO2@C CSNWN) is synthesized by a template-free and surfactant-free solvothermal process, followed by high temperature carbonization. This hierarchical network serves as a new class of catalyst support to enhance the activity and durability of noble metal catalysts for alcohol oxidation reactions. Its supported Pd nanoparticles, Pd/(Pd-CeO2@C CSNWN), exhibit >9 fold increase in activity toward the ethanol oxidation over the state-of-the-art Pd/C catalyst, which is the highest among the reported Pd systems. Moreover, stability tests show a virtually unchanged activity after 1000 cycles. The high activity is mainly attributed to the superior oxygen-species releasing capability of Pd-doped CeO2 nanowires by accelerating the removal of the poisoning intermediate. The unique interconnected one-dimensional core-sheath structure is revealed to facilitate immobilization of the metal catalysts, leading to the improved durability. This core-sheath nanowire network opens up a new strategy for catalyst performance optimization for next-generation fuel cells.A novel palladium-doped ceria and carbon core-sheath nanowire network (Pd-CeO2@C CSNWN) is synthesized by a template-free and surfactant-free solvothermal process, followed by high temperature carbonization. This hierarchical network serves as a new class of catalyst support to enhance the activity and durability of noble metal catalysts for alcohol oxidation reactions. Its supported Pd nanoparticles, Pd/(Pd-CeO2@C CSNWN), exhibit >9 fold increase in activity toward the ethanol oxidation over the state-of-the-art Pd/C catalyst, which is the highest among the reported Pd systems. Moreover, stability tests show a virtually unchanged activity after 1000 cycles. The high activity is mainly attributed to the superior oxygen-species releasing capability of Pd-doped CeO2 nanowires by accelerating the removal of the poisoning intermediate. The unique interconnected one-dimensional core-sheath structure is revealed to facilitate immobilization of the metal catalysts, leading to the improved durability. This core-sheath nanowire network opens up a new strategy for catalyst performance optimization for next-generation fuel cells. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03023d

How children explore the phonological network in child-directed speech: A survival analysis of children’s first word productions

PubMed Central

Carlson, Matthew T.; Sonderegger, Morgan; Bane, Max

2014-01-01

We explored how phonological network structure influences the age of words’ first appearance in children’s (14–50 months) speech, using a large, longitudinal corpus of spontaneous child-caregiver interactions. We represent the caregiver lexicon as a network in which each word is connected to all of its phonological neighbors, and consider both words’ local neighborhood density (degree), and also their embeddedness among interconnected neighborhoods (clustering coefficient and coreness). The larger-scale structure reflected in the latter two measures is implicated in current theories of lexical development and processing, but its role in lexical development has not yet been explored. Multilevel discrete-time survival analysis revealed that children are more likely to produce new words whose network properties support lexical access for production: high degree, but low clustering coefficient and coreness. These effects appear to be strongest at earlier ages and largely absent from 30 months on. These results suggest that both a word’s local connectivity in the lexicon and its position in the lexicon as a whole influences when it is learned, and they underscore how general lexical processing mechanisms contribute to productive vocabulary development. PMID:25089073

Radiation-Tolerant, SpaceWire-Compatible Switching Fabric

NASA Technical Reports Server (NTRS)

Katzman, Vladimir

2011-01-01

Current and future near-Earth and deep space exploration programs and space defense programs require the development of robust intra-spacecraft serial data transfer electronics that must be reconfigurable, fault-tolerant, and have the ability to operate effectively for long periods of time in harsh environmental conditions. Existing data transfer systems based on state-of-the-art serial data transfer protocols or passive backplanes are slow, power-hungry, and poorly reconfigurable. They provide limited expandability and poor tolerance to radiation effects and total ionizing dose (TID) in particular, which presents harmful threats to modern submicron electronics. This novel approach is based on a standard library of differential cells tolerant to TID, and patented, multi-level serial interface architecture that ensures the reliable operation of serial interconnects without application of a data-strobe or other encoding techniques. This proprietary, high-speed differential interface presents a lowpower solution fully compatible with the SpaceWire (SW) protocol. It replaces a dual data-strobe link with two identical independent data channels, thus improving the system s tolerance to harsh environments through additional double redundancy. Each channel incorporates an automatic line integrity control circuitry that delivers error signals in case of broken or shorted lines.

Cross-linked hierarchical arrays of Ni2P nanoflakes prepared via directional phosphorization and their applications for advanced alkaline batteries

NASA Astrophysics Data System (ADS)

Mai, Yong-jin; Xia, Xinhui; Jie, Xiao-hua

2017-11-01

In this work, we report a facile directional phosphorization method for construction of hierarchical cross-linked Ni2P arrays, which show a multileveled porous architecture. The basic building blocks are numerous nanoflakes with thicknesses of 15-20 nm, which are self-assembled with each other forming the primary porous mushroom-like structure with 1-3 μm. Impressively, the 3D porous channels run through the whole Ni2P arrays. The secondary nanoflakes consist of interconnected nanoparticles of 10-30 nm and lots of nanopores of 10-50 nm. The electrochemical performance of the as-prepared Ni2P arrays is investigated as cathode of alkaline batteries and demonstrated with higher capacities (127 mAhh g-1 at 2.5 A g-1) and better high-rate cycling stability (123 mAhh g-1 2.5 A g-1 after 9000 cycles) than the preformed Ni(OH)2 arrays counterparts (80 mAhh g-1 2.5 A g-1 and 66 mAhh g-1 after 9000 cycles). The enhanced performance is mainly due to the improved surface area & porosity as well as reinforced electrical conductivity.

Simulations in Medicine and Biology: Insights and perspectives

NASA Astrophysics Data System (ADS)

Spyrou, George M.

2015-01-01

Modern medicine and biology have been transformed into quantitative sciences of high complexity, with challenging objectives. The aims of medicine are related to early diagnosis, effective therapy, accurate intervention, real time monitoring, procedures/systems/instruments optimization, error reduction, and knowledge extraction. Concurrently, following the explosive production of biological data concerning DNA, RNA, and protein biomolecules, a plethora of questions has been raised in relation to their structure and function, the interactions between them, their relationships and dependencies, their regulation and expression, their location, and their thermodynamic characteristics. Furthermore, the interplay between medicine and biology gives rise to fields like molecular medicine and systems biology which are further interconnected with physics, mathematics, informatics, and engineering. Modelling and simulation is a powerful tool in the fields of Medicine and Biology. Simulating the phenomena hidden inside a diagnostic or therapeutic medical procedure, we are able to obtain control on the whole system and perform multilevel optimization. Furthermore, modelling and simulation gives insights in the various scales of biological representation, facilitating the understanding of the huge amounts of derived data and the related mechanisms behind them. Several examples, as well as the insights and the perspectives of simulations in biomedicine will be presented.

Comprehensive evaluation of global energy interconnection development index

NASA Astrophysics Data System (ADS)

Liu, Lin; Zhang, Yi

2018-04-01

Under the background of building global energy interconnection and realizing green and low-carbon development, this article constructed the global energy interconnection development index system which based on the current situation of global energy interconnection development. Through using the entropy method for the weight analysis of global energy interconnection development index, and then using gray correlation method to analyze the selected countries, this article got the global energy interconnection development index ranking and level classification.

Review of Interconnection Practices and Costs in the Western States

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bird, Lori A; Flores-Espino, Francisco; Volpi, Christina M

The objective of this report is to evaluate the nature of barriers to interconnecting distributed PV, assess costs of interconnection, and compare interconnection practices across various states in the Western Interconnection. The report addresses practices for interconnecting both residential and commercial-scale PV systems to the distribution system. This study is part of a larger, joint project between the Western Interstate Energy Board (WIEB) and the National Renewable Energy Laboratory (NREL), funded by the U.S. Department of Energy, to examine barriers to distributed PV in the 11 states wholly within the Western Interconnection.

Power interconnection projects in the ASEAN region: Definitional-mission report No. 1. Export trade information

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1992-06-01

In response to a request from the Association of Southeast Asian Nations (ASEAN), the U.S. Trade and Development Program (TDP) conducted a definitional mission to evaluate the prospects of TDP funding for five Power Interconnection Projects in the ASEAN region. These projects included: Batam-Singapore Interconnection; Sumatera-Peninsular Malaysia Interconnection; Sarawak-West Kalimantan Interconnection; Sarawak-Brunei-Sabah Interconnection; and Java-Sumatera Interconnection. Based on a review of the proposed scopes of work for the projects and the discussions in the field, the report summarizes the technical details and the costs of implementation for the projects.

Advances in Materials for Recent Low-Profile Implantable Bioelectronics

PubMed Central

Kim, Yun-Soung; Tillman, Bryan W.; Chun, Youngjae

2018-01-01

The rapid development of micro/nanofabrication technologies to engineer a variety of materials has enabled new types of bioelectronics for health monitoring and disease diagnostics. In this review, we summarize widely used electronic materials in recent low-profile implantable systems, including traditional metals and semiconductors, soft polymers, biodegradable metals, and organic materials. Silicon-based compounds have represented the traditional materials in medical devices, due to the fully established fabrication processes. Examples include miniaturized sensors for monitoring intraocular pressure and blood pressure, which are designed in an ultra-thin diaphragm to react with the applied pressure. These sensors are integrated into rigid circuits and multiple modules; this brings challenges regarding the fundamental material’s property mismatch with the targeted human tissues, which are intrinsically soft. Therefore, many polymeric materials have been investigated for hybrid integration with well-characterized functional materials such as silicon membranes and metal interconnects, which enable soft implantable bioelectronics. The most recent trend in implantable systems uses transient materials that naturally dissolve in body fluid after a programmed lifetime. Such biodegradable metallic materials are advantageous in the design of electronics due to their proven electrical properties. Collectively, this review delivers the development history of materials in implantable devices, while introducing new bioelectronics based on bioresorbable materials with multiple functionalities. PMID:29596359

Nano-porous electrode systems by colloidal lithography for sensitive electrochemical detection: fabrication technology and properties

NASA Astrophysics Data System (ADS)

Lohmüller, Theobald; Müller, Ulrich; Breisch, Stefanie; Nisch, Wilfried; Rudorf, Ralf; Schuhmann, Wolfgang; Neugebauer, Sebastian; Kaczor, Markus; Linke, Stephan; Lechner, Sebastian; Spatz, Joachim; Stelzle, Martin

2008-11-01

A porous metal-insulator-metal sensor system was developed with the ultimate goal of enhancing the sensitivity of electrochemical sensors by taking advantage of redox cycling of electro active molecules between closely spaced electrodes. The novel fabrication technology is based on thin film deposition in combination with colloidal self-assembly and reactive ion etching to create micro- or nanopores. This cost effective approach is advantageous compared to common interdigitated electrode arrays (IDA) since it does not require high definition lithography technology. Spin-coating and random particle deposition, combined with a new sublimation process are discussed as competing strategies to generate monolayers of colloidal spheres. Metal-insulator-metal layer systems with low leakage currents < 10 pA and an insulator thickness as low as 100 nm were obtained at high yield (typically > 90%). We also discuss possible causes of sensor failure with respect to critical fabrication processes. Short circuits which could occur during or as a result of the pore etching process were investigated in detail. Infrared microscopy in combination with focused ion beam etching/SEM were used to reveal a defect mechanism creating interconnects and increased leakage current between the top and bottom electrodes. Redox cycling provides for amplification factors of >100. A general applicability for electrochemical diagnostic assays is therefore anticipated.

Laser-induced selective metallization of polypropylene doped with multiwall carbon nanotubes

NASA Astrophysics Data System (ADS)

Ratautas, Karolis; Gedvilas, Mindaugas; Stankevičiene, Ina; Jagminienė, Aldona; Norkus, Eugenijus; Pira, Nello Li; Sinopoli, Stefano; Račiukaitis, Gediminas

2017-08-01

Moulded interconnect devices (MID) offer the material, weight and cost saving by integration electronic circuits directly into polymeric components used in automotive and other consumer products. Lasers are used to write circuits directly by modifying the surface of polymers followed by an electroless metal plating. A new composite material - the polypropylene doped with multiwall carbon nanotubes was developed for the laser-induced selective metallization. Mechanism of surface activation by laser irradiation was investigated in details utilising pico- and nanoseconds lasers. Deposition of copper was performed in the autocatalytic electroless plating bath. The laser-activated polymer surfaces have been studied using the Raman spectroscopy and scanning electron microscope (SEM). Microscopic images revealed that surface becomes active only after its melting by a laser. Alterations in the Raman spectra of the D and G bands indicated the clustering of carbon additives in the composite material. Optimal laser parameters for the surface activation were found by measuring a sheet resistance of the finally metal-plated samples. A spatially selective copper plating was achieved with the smallest conductor line width of 22 μm at the laser scanning speed of 3 m/s and the pulse repetition rate of 100 kHz. Finally, the technique was validated by making functional electronic circuits by this MID approach.

Rice husks as a sustainable silica source for hierarchical flower-like metal silicate architectures assembled into ultrathin nanosheets for adsorption and catalysis.

PubMed

Zhang, Shouwei; Gao, Huihui; Li, Jiaxing; Huang, Yongshun; Alsaedi, Ahmed; Hayat, Tasawar; Xu, Xijin; Wang, Xiangke

2017-01-05

Metal silicates have attracted extensive interests due to their unique structure and promising properties in adsorption and catalysis. However, their applications were hampered by the complex and expensive synthesis. In this paper, three-dimensional (3D) hierarchical flower-like metal silicate, including magnesium silicate, zinc silicate, nickel silicate and cobalt silicate, were for the first time prepared by using rice husks as a sustainable silicon source. The flower-like morphology, interconnected ultrathin nanosheets structure and high specific surface area endowed them with versatile applications. Magnesium silicate was used as an adsorbent with the maximum adsorption capacities of 557.9, 381.3, and 482.8mg/g for Pb 2+ , tetracycline (TC), and UO 2 2+ , respectively. Ni nanoparticles/silica (Ni NPs/SiO 2 ) exhibited high catalytic activity and good stability for 4-nitrophenol (4-NP) reduction within only ∼160s, which can be attributed to the ultra-small particle size (∼6.8nm), good dispersion and high loading capacity of Ni NPs. Considering the abundance and renewability of rice husks, metal silicate with complex architecture can be easily produced at a large scale and become a sustainable and reliable resource for multifunctional applications. Copyright © 2016 Elsevier B.V. All rights reserved.

Advances in Materials for Recent Low-Profile Implantable Bioelectronics.

PubMed

Chen, Yanfei; Kim, Yun-Soung; Tillman, Bryan W; Yeo, Woon-Hong; Chun, Youngjae

2018-03-29

The rapid development of micro/nanofabrication technologies to engineer a variety of materials has enabled new types of bioelectronics for health monitoring and disease diagnostics. In this review, we summarize widely used electronic materials in recent low-profile implantable systems, including traditional metals and semiconductors, soft polymers, biodegradable metals, and organic materials. Silicon-based compounds have represented the traditional materials in medical devices, due to the fully established fabrication processes. Examples include miniaturized sensors for monitoring intraocular pressure and blood pressure, which are designed in an ultra-thin diaphragm to react with the applied pressure. These sensors are integrated into rigid circuits and multiple modules; this brings challenges regarding the fundamental material's property mismatch with the targeted human tissues, which are intrinsically soft. Therefore, many polymeric materials have been investigated for hybrid integration with well-characterized functional materials such as silicon membranes and metal interconnects, which enable soft implantable bioelectronics. The most recent trend in implantable systems uses transient materials that naturally dissolve in body fluid after a programmed lifetime. Such biodegradable metallic materials are advantageous in the design of electronics due to their proven electrical properties. Collectively, this review delivers the development history of materials in implantable devices, while introducing new bioelectronics based on bioresorbable materials with multiple functionalities.

Design and simulation of multi-color infrared CMOS metamaterial absorbers

NASA Astrophysics Data System (ADS)

Cheng, Zhengxi; Chen, Yongping; Ma, Bin

2016-05-01

Metamaterial electromagnetic wave absorbers, which usually can be fabricated in a low weight thin film structure, have a near unity absorptivity in a special waveband, and therefore have been widely applied from microwave to optical waveband. To increase absorptance of CMOS MEMS devices in 2-5 μmm waveband, multi-color infrared metamaterial absorbers are designed with CSMC 0.5 μmm 2P3M and 0.18 μmm 1P6M CMOS technology in this work. Metal-insulator-metal (MIM) three-layer MMAs and Insulator-metal-insulator-metal (MIMI) four-layer MMAs are formed by CMOS metal interconnect layers and inter metal dielectrics layer. To broaden absorption waveband in 2-5μmm range, MMAs with a combination of different sizes cross bars are designed. The top metal layer is a periodic aluminum square array or cross bar array with width ranging from submicron to several microns. The absorption peak position and intensity of MMAs can be tuned by adjusting the top aluminum micro structure array. Post-CMOS process is adopted to fabricate MMAs. The infrared absorption spectra of MMAs are verified with finite element method simulation, and the effects of top metal structure sizes, patterns, and films thickness are also simulated and intensively discussed. The simulation results show that CMOS MEMS MMAs enhance infrared absorption in 2-20 μmm. The MIM broad MMA has an average absorptance of 0.22 in 2-5 μmm waveband, and 0.76 in 8-14 μm waveband. The CMOS metamaterial absorbers can be inherently integrated in many kinds of MEMS devices fabricated with CMOS technology, such as uncooled bolometers, infrared thermal emitters.

Multilevel Model Prediction

ERIC Educational Resources Information Center

Frees, Edward W.; Kim, Jee-Seon

2006-01-01

Multilevel models are proven tools in social research for modeling complex, hierarchical systems. In multilevel modeling, statistical inference is based largely on quantification of random variables. This paper distinguishes among three types of random variables in multilevel modeling--model disturbances, random coefficients, and future response…

A multilevel preconditioner for domain decomposition boundary systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bramble, J.H.; Pasciak, J.E.; Xu, Jinchao.

1991-12-11

In this note, we consider multilevel preconditioning of the reduced boundary systems which arise in non-overlapping domain decomposition methods. It will be shown that the resulting preconditioned systems have condition numbers which be bounded in the case of multilevel spaces on the whole domain and grow at most proportional to the number of levels in the case of multilevel boundary spaces without multilevel extensions into the interior.

Packaging Technologies for High Temperature Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

2013-01-01

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Packaging Technologies for High Temperature Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liangyu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

2013-01-01

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Solvent induced synthesis, structure and properties of coordination polymers based on 5-hydroxyisophthalic acid as linker and 1,10-phenanthroline as auxiliary ligand

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kariem, Mukaddus; Yawer, Mohd; Sheikh, Haq Nawaz, E-mail: hnsheikh@rediffmail.com

2015-11-15

Three new coordination polymers [Mn(hip)(phen) (H{sub 2}O)]{sub n} (1), [Co(hip)(phen) (H{sub 2}O)]{sub n} (2), and [Cd(hip) (phen) (H{sub 2}O)]{sub n} (3) (H{sub 2}hip=5-hydroxyisophthalic acid; phen=1,10-phenanthroline) have been synthesized by solvo-hydrothermal method using diethyl formamide-water (DEF-H{sub 2}O) as solvent system. Single-crystal X-ray diffraction analysis reveals that all three coordination polymers 1, 2 and 3 crystallize in monoclinic space group P2/n. Metal ions are inter-connected by hydroxyisophthalate anions forming zig-zag 1D chain. 1D chains are further inter-connected by hydrogen bonding and π–π stacking interactions leading to 3D supramolecular architecture. Hydrogen-bonding and π–π stacking provide thermal stability to polymers. Compounds 1 and 2more » are paramagnetic at room temperature and variable temperature magnetic moment measurements revealed weak ferromagnetic interactions between metal ions at low temperature. Compound 3 exhibits excellent photoluminescence with large Stokes shift. - Graphical abstract: 1D helical chains of coordination polymers were synthesized by solvo-hydrothermal reaction of 5-hydroxyisopthalic acid and 1,10-phenanthroline with MnCl{sub 2}·4H{sub 2}O / CoCl{sub 2}·6H{sub 2}O / Cd(NO{sub 3}){sub 2}·6H{sub 2}O. - Highlights: • Solvent induced synthesis of three coordination polymers with 1D zig-zag structure. • Crystal structures of coordination polymers are reported and discussed. • 1,10-Phenanthroline influences magnetic and luminescent properties of polymers. • Coordination polymer of Cd is luminescent exhibiting large Stokes shift.« less

X-ray photoemission spectromicroscopy of titanium silicide formation in patterned microstructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, S.; Solak, H.; Cerrina, F.

1997-04-01

Titanium silicide has the lowest resistivity of all the refractory metal silicides and has good thermal stability as well as excellent compatibility with Al metallization. It is used as an intermediate buffer layer between W vias and the Si substrate to provide good electrical contact in ULSI technology, whose submicron patterned features form the basis of the integrated circuits of today and tomorrow, in the self aligned silicide (salicide) formation process. TiSi{sub 2} exists in two phases: a metastable C49 base-centered orthorhombic phase with specific resistivity of 60-90 {mu}{Omega}-cm that is formed at a lower temperature (formation anneal) and themore » stable 12-15 {mu}{Omega}-cm resistivity face-centered orthorhombic C54 phase into which C49 is transformed with a higher temperature (conversion anneal) step. C54 is clearly the target for low resistivity VLSI interconnects. However, it has been observed that when dimensions shrink below 1/mic (or when the Ti thickness drops below several hundred angstroms), the transformation of C49 into C54 is inhibited and agglomeration often occurs in fine lines at high temperatures. This results in a rise in resistivity due to incomplete transformation to C54 and because of discontinuities in the interconnect line resulting from agglomeration. Spectromicroscopy is an appropriate tool to study the evolution of the TiSi2 formation process because of its high resolution chemical imaging ability which can detect bonding changes even in the absence of changes in the relative amounts of species and because of the capability of studying thick {open_quotes}as is{close_quotes} industrial samples.« less

Development of a technology for fabricating low-cost parallel optical interconnects

NASA Astrophysics Data System (ADS)

Van Steenberge, Geert; Hendrickx, Nina; Geerinck, Peter; Bosman, Erwin; Van Put, Steven; Van Daele, Peter

2006-04-01

We present a fabrication technology for integrating polymer waveguides and 45° micromirror couplers into standard electrical printed circuit boards (PCBs). The most critical point that is being addressed is the low-cost manufacturing and the compatibility with current PCB production. The latter refers to the processes as well as material compatibility. In the fist part the waveguide fabrication technology is discussed, both photo lithography and laser ablation are proposed. It is shown that a frequency tripled Nd-YAG laser (355 nm) offers a lot of potential for defining single mode interconnections. Emphasis is on multimode waveguides, defined by KrF excimer laser (248 nm) ablation using acrylate polymers. The first conclusion out of loss spectrum measurements is a 'yellowing effect' of laser ablated waveguides, leading to an increased loss at shorter wavelengths. The second important conclusion is a potential low loss at a wavelength of 850 nm, 980 nm and 1310 nm. This is verified at 850 nm by cut-back measurements on 10-cm-long waveguides showing an average propagation loss of 0.13 dB/cm. Photo lithographically defined waveguides using inorganic-organic hybrid polymers show an attenuation loss of 0.15 dB/cm at 850 nm. The generation of debris and the presence of microstructures are two main concerns for KrF excimer laser ablation of hybrid polymers. In the second part a process for embedding metal coated 45° micromirrors in optical waveguiding layers is described. Mirrors are selectively metallized using a lift-off process. Filling up the angled via without the presence of air bubbles and providing a flat surface above the mirror is only possible by enhancing the cladding deposition process with ultrasound agitation. Initial loss measurements indicate an excess mirror loss of 1.5 dB.

Reconfigurable optical interconnections via dynamic computer-generated holograms

NASA Technical Reports Server (NTRS)

Liu, Hua-Kuang (Inventor); Zhou, Shaomin (Inventor)

1994-01-01

A system is proposed for optically providing one-to-many irregular interconnections, and strength-adjustable many-to-many irregular interconnections which may be provided with strengths (weights) w(sub ij) using multiple laser beams which address multiple holograms and means for combining the beams modified by the holograms to form multiple interconnections, such as a cross-bar switching network. The optical means for interconnection is based on entering a series of complex computer-generated holograms on an electrically addressed spatial light modulator for real-time reconfigurations, thus providing flexibility for interconnection networks for largescale practical use. By employing multiple sources and holograms, the number of interconnection patterns achieved is increased greatly.

Improved Design of Optical MEMS Using the SUMMiT Fabrication Process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michalicek, M.A.; Comtois, J.H.; Barron, C.C.

This paper describes the design and fabrication of optical Microelectromechanical Systems (MEMS) devices using the Sandia Ultra planar Multilevel MEMS Technology (SUMMiT) fabrication process. This state of the art process, offered by Sandia National Laboratories, provides unique and very advantageous features which make it ideal for optical devices. This enabling process permits the development of micromirror devices with near ideal characteristics which have previously been unrealizable in standard polysilicon processes. This paper describes such characteristics as elevated address electrodes, individual address wiring beneath the device, planarized mirror surfaces, unique post-process metallization, and the best active surface area to date.

New evidence favoring multilevel decomposition and optimization

NASA Technical Reports Server (NTRS)

Padula, Sharon L.; Polignone, Debra A.

1990-01-01

The issue of the utility of multilevel decomposition and optimization remains controversial. To date, only the structural optimization community has actively developed and promoted multilevel optimization techniques. However, even this community acknowledges that multilevel optimization is ideally suited for a rather limited set of problems. It is warned that decomposition typically requires eliminating local variables by using global variables and that this in turn causes ill-conditioning of the multilevel optimization by adding equality constraints. The purpose is to suggest a new multilevel optimization technique. This technique uses behavior variables, in addition to design variables and constraints, to decompose the problem. The new technique removes the need for equality constraints, simplifies the decomposition of the design problem, simplifies the programming task, and improves the convergence speed of multilevel optimization compared to conventional optimization.

Linear induction pump

DOEpatents

Meisner, John W.; Moore, Robert M.; Bienvenue, Louis L.

1985-03-19

Electromagnetic linear induction pump for liquid metal which includes a unitary pump duct. The duct comprises two substantially flat parallel spaced-apart wall members, one being located above the other and two parallel opposing side members interconnecting the wall members. Located within the duct are a plurality of web members interconnecting the wall members and extending parallel to the side members whereby the wall members, side members and web members define a plurality of fluid passageways, each of the fluid passageways having substantially the same cross-sectional flow area. Attached to an outer surface of each side member is an electrically conductive end bar for the passage of an induced current therethrough. A multi-phase, electrical stator is located adjacent each of the wall members. The duct, stators, and end bars are enclosed in a housing which is provided with an inlet and outlet in fluid communication with opposite ends of the fluid passageways in the pump duct. In accordance with a preferred embodiment, the inlet and outlet includes a transition means which provides for a transition from a round cross-sectional flow path to a substantially rectangular cross-sectional flow path defined by the pump duct.

Development of Anode-Supported Single Cells and Small Stacks for Intermediate Temperature Sofc at Kepri

NASA Astrophysics Data System (ADS)

Yoo, Y.-S.; Park, J.-W.; Park, J.-K.; Lim, H.-C.; Oh, J.-M.; Bae, J.-M.

Recent results on intermediate temperature-operating solid oxide fuel cells (IT-SOFC) are mainly focused on getting the higher performance of single cell at lower operating temperature, especially using planar type. We have started a project to develop 1 kW-class SOFC system for Residential Power Generation(RPG) application. For a 1 kW-class SOFC stack that can be operated at intermediate temperatures, we have developed anode-supported, planar type SOFC to have advantages for commercialization of SOFCs considering mass production and using cost-effective interconnects such as ferritic stainless steels. At higher temperature, performance of SOFC can be increased due to higher electrochemical activity of electrodes and lower ohmic losses, but the surface of metallic interconnects at cathode side is rapidly oxidized into resistive oxide scale. For efficient operation of SOFC at reduced temperature at, firstly we have developed alternative cathode materials of LSCF instead of LSM to get higher performance of electrodes, and secondly introduced functional-layered structure at anode side. The I-V and AC impedance characteristics of improved single cells and small stacks were evaluated at intermediate temperatures (650°C and 750°C) using hydrogen gas as a fuel.

Oxidation behaviour and electrical properties of cobalt/cerium oxide composite coatings for solid oxide fuel cell interconnects

NASA Astrophysics Data System (ADS)

Harthøj, Anders; Holt, Tobias; Møller, Per

2015-05-01

This work evaluates the performance of cobalt/cerium oxide (Co/CeO2) composite coatings and pure Co coatings to be used for solid oxide fuel cell (SOFC) interconnects. The coatings are electroplated on the ferritic stainless steels Crofer 22 APU and Crofer 22H. Coated and uncoated samples are exposed in air at 800 °C for 3000 h and oxidation rates are measured and oxide scale microstructures are investigated. Area-specific resistances (ASR) in air at 850 °C of coated and uncoated samples are also measured. A dual layered oxide scale formed on all coated samples. The outer layer consisted of Co, Mn, Fe and Cr oxide and the inner layer consisted of Cr oxide. The CeO2 was present as discrete particles in the outer oxide layer after exposure. The Cr oxide layer thicknesses and oxidations rates were significantly reduced for Co/CeO2 coated samples compared to for Co coated and uncoated samples. The ASR of all Crofer 22H samples increased significantly faster than of Crofer 22 APU samples which was likely due to the presence of SiO2 in the oxide/metal interface of Crofer 22H.

Arbitrary-Shaped Graphene-Based Planar Sandwich Supercapacitors on One Substrate with Enhanced Flexibility and Integration.

PubMed

Zheng, Shuanghao; Tang, Xingyan; Wu, Zhong-Shuai; Tan, Yuan-Zhi; Wang, Sen; Sun, Chenglin; Cheng, Hui-Ming; Bao, Xinhe

2017-02-28

The emerging smart power source-unitized electronics represent an utmost innovative paradigm requiring dramatic alteration from materials to device assembly and integration. However, traditional power sources with huge bottlenecks on the design and performance cannot keep pace with the revolutionized progress of shape-confirmable integrated circuits. Here, we demonstrate a versatile printable technology to fabricate arbitrary-shaped, printable graphene-based planar sandwich supercapacitors based on the layer-structured film of electrochemically exfoliated graphene as two electrodes and nanosized graphene oxide (lateral size of 100 nm) as a separator on one substrate. These monolithic planar supercapacitors not only possess arbitrary shapes, e.g., rectangle, hollow-square, "A" letter, "1" and "2" numbers, circle, and junction-wire shape, but also exhibit outstanding performance (∼280 F cm -3 ), excellent flexibility (no capacitance degradation under different bending states), and applicable scalability, which are far beyond those achieved by conventional technologies. More notably, such planar supercapacitors with superior integration can be readily interconnected in parallel and series, without use of metal interconnects and contacts, to modulate the output current and voltage of modular power sources for designable integrated circuits in various shapes and sizes.

Electrically driven monolithic subwavelength plasmonic interconnect circuits

PubMed Central

Liu, Yang; Zhang, Jiasen; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2017-01-01

In the post-Moore era, an electrically driven monolithic optoelectronic integrated circuit (OEIC) fabricated from a single material is pursued globally to enable the construction of wafer-scale compact computing systems with powerful processing capabilities and low-power consumption. We report a monolithic plasmonic interconnect circuit (PIC) consisting of a photovoltaic (PV) cascading detector, Au-strip waveguides, and electrically driven surface plasmon polariton (SPP) sources. These components are fabricated from carbon nanotubes (CNTs) via a CMOS (complementary metal-oxide semiconductor)–compatible doping-free technique in the same feature size, which can be reduced to deep-subwavelength scale (~λ/7 to λ/95, λ = 1340 nm) compared with the 14-nm technique node. An OEIC could potentially be configured as a repeater for data transport because of its “photovoltaic” operation mode to transform SPP energy directly into electricity to drive subsequent electronic circuits. Moreover, chip-scale throughput capability has also been demonstrated by fabricating a 20 × 20 PIC array on a 10 mm × 10 mm wafer. Tailoring photonics for monolithic integration with electronics beyond the diffraction limit opens a new era of chip-level nanoscale electronic-photonic systems, introducing a new path to innovate toward much faster, smaller, and cheaper computing frameworks. PMID:29062890

Flexible interconnects for fuel cell stacks

DOEpatents

Lenz, David J.; Chung, Brandon W.; Pham, Ai Quoc

2004-11-09

An interconnect that facilitates electrical connection and mechanical support with minimal mechanical stress for fuel cell stacks. The interconnects are flexible and provide mechanically robust fuel cell stacks with higher stack performance at lower cost. The flexible interconnects replace the prior rigid rib interconnects with flexible "fingers" or contact pads which will accommodate the imperfect flatness of the ceramic fuel cells. Also, the mechanical stress of stacked fuel cells will be smaller due to the flexibility of the fingers. The interconnects can be one-sided or double-sided.

Solar Interconnection Standards & Policies

EPA Pesticide Factsheets

The Toolbox for Renewable Energy Project Development's Solar Interconnection Standards and Policies page provides an overview of the interconnection policy and standards, as well as, resources to help you understand the interconnection policy landscape.

Electrode and interconnect for miniature fuel cells using direct methanol feed

NASA Technical Reports Server (NTRS)

Narayanan, Sekharipuram R. (Inventor); Valdez, Thomas I. (Inventor); Clara, Filiberto (Inventor)

2004-01-01

An improved system for interconnects in a fuel cell. In one embodiment, the membranes are located in parallel with one another, and current flow between them is facilitated by interconnects. In another embodiment, all of the current flow is through the interconnects which are located on the membranes. The interconnects are located between two electrodes.

Local interconnection neural networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Jiajun; Zhang Li; Yan Dapen

1993-06-01

The idea of a local interconnection neural network (LINN) is presentd and compared with the globally interconnected Hopfield model. Under the storage limit requirement, LINN is shown to offer the same associative memory capability as the global interconnection neural network while having a much smaller interconnection matrix. LINN can be readily implemented optically using the currently available spatial light modulators. 15 refs.

76 FR 16405 - Notice of Attendance at PJM INterconnection, L.L.C., Meetings

Federal Register 2010, 2011, 2012, 2013, 2014

2011-03-23

... INterconnection, L.L.C., Meetings The Federal Energy Regulatory Commission (Commission) hereby gives notice that members of the Commission and Commission staff may attend upcoming PJM Interconnection, L.L.C., (PJM...: Docket No. EL05-121, PJM Interconnection, L.L.C. Docket No. ER06-456, PJM Interconnection, L.L.C. Docket...