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Sample records for multilevel metallization interconnection

  1. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, D.B.

    1985-08-23

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  2. Planarization of metal films for multilevel interconnects

    SciTech Connect

    Tuckerman, David B.

    1987-01-01

    In the fabrication of multilevel integrated circuits, each metal layer is anarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  3. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, David B.

    1989-01-01

    In the fabrication of multilevel integrated circuits, each metal layer is anarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  4. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, D.B.

    1985-06-24

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping lase pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  5. Planarization of metal films for multilevel interconnects

    SciTech Connect

    Tuckerman, D.B.

    1989-03-21

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration. 6 figs.

  6. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, D.B.

    1989-03-21

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration. 6 figs.

  7. Planarization of metal films for multilevel interconnects

    SciTech Connect

    Tuckerman, D.B.

    1987-07-21

    This patent describes an electrical interconnection structure comprising aluminum or aluminum-silicon alloy layers separated by dielectric layers. Each aluminum or alloy layer has been planarized to form a flat surface by eliminating any oxide coating of the aluminum or alloy, forming a passivating and antireflection coating of silicon on the aluminum or alloy. Heating is applied to momentarily melt the layer to form a flat surface prior to the formation of an additional dielectric layer. The metal layers have been patterned after planarization according to a preselected pattern and interconnected through the dielectric layers.

  8. Pulsed laser planarization of metal films for multilevel interconnects

    SciTech Connect

    Tuckerman, D.B.; Schmitt, R.L.

    1985-05-01

    Multilevel interconnect schemes for integrated circuits generally require one or more planarization steps, in order to maintain an acceptably flat topography for lithography and thin-film step coverage on the higher levels. Traditional approaches have involved planarization of the interlevel insulation (dielectric) layers, either by spin-on application (e.g., polyimide), or by reflow (e.g., phosphosilicate glass). We have pursued an alternative approach, in which each metal level is melted (hence planarized) using a pulsed laser prior to patterning. Short (approx.1 ..mu..s) pulses are used to preclude undesirable metallurgical reactions between the film, adhesion or barrier layer, and dielectric layer. Laser planarization of metals is particularly well suited to multilevel systems which include ground or power planes. Results are presented for planarization of gold films on SiO/sub 2/ dielectric layers using a flashlamp-pumped dye laser. The pulse duration is approx.1 ..mu..s, which allows the heat pulse to uniformly penetrate the gold while not penetrating substantially through the underlying SiO/sub 2/ (hence not perturbing the lower levels of metal). Excellent planarization of the gold films is achieved (less than 0.1 ..mu..m surface roughness, even starting with extreme topographic variations), as well as improved conductivity. To demonstrate the process, numerous planarized two-layer structures (transmission lines under a ground plane) were fabricated and characterized. 9 refs., 2 figs.

  9. Planarization of metal films for multilevel interconnects by pulsed laser heating

    DOEpatents

    Tuckerman, David B.

    1987-01-01

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  10. A novel multi-level interconnect scheme with air as low K inter-metal dielectric for ultradeep submicron application

    NASA Astrophysics Data System (ADS)

    Chen, Chung-Hui; Fang, Yean-Kuen; Lin, Chun-Sheng; Yang, Chih-Wei; Hsieh, Jang-Cheng

    2001-01-01

    In this letter, a novel multi-level interconnect scheme with air as the low K inter-metal dielectric for ultra large scale integrated circuit (ULSI) application in ultradeep submicron (UDSM) range is proposed. The detailed process integration with copper dual damascene processing is described. The feasibility of the scheme is examined by trimethylaluminum Raphael simulation for the effective dielectric constant and the cutoff frequency in a standard divide by three counter. The simulation results are also compared with these reported air gap formation technologies. The results show the developed multi-level interconnect system is suitable for UDSM application.

  11. The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

    NASA Technical Reports Server (NTRS)

    Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

    1979-01-01

    The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

  12. Advanced multilevel metallization technology

    NASA Astrophysics Data System (ADS)

    Ohba, Takayuki

    1995-10-01

    In order for ULSI manufacturing to minimize the COO (cost of ownership) aspect in the wiring process and realize fabricating over 256M bits DRAM, several wiring technologies have been proposed. The evidential criteria in choosing the most probable one are physical or material limitations (e.g. step-coverage and resistivity) and requirements from manufacturing (e.g. process complexity, reliability, throughput, and total cost). Therefore, a combination of metallurgy using chemical vapor deposition (CVD) with simplified multilevel interconnects has a high potential in overcoming those difficulties. In this paper, an integrated multilevel metallization (IMM) by considering the above criteria is discussed. Alternatives of improved W-CVD, TiN-CVD using diborane (B 2H 6) and methylhydrazine (MH) reduction, selective W-CVD, and Cu wiring are described from our recent studies.

  13. Multilevel metallization method for fabricating a metal oxide semiconductor device

    NASA Technical Reports Server (NTRS)

    Hollis, B. R., Jr.; Feltner, W. R.; Bouldin, D. L.; Routh, D. E. (Inventor)

    1978-01-01

    An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.

  14. Multi-level interconnects for heterojunction bipolar transistor integrated circuit technologies

    SciTech Connect

    Patrizi, G.A.; Lovejoy, M.L.; Schneider, R.P. Jr.; Hou, H.Q.; Enquist, P.M.

    1995-12-31

    Heterojunction bipolar transistors (HBTs) are mesa structures which present difficult planarization problems in integrated circuit fabrication. The authors report a multilevel metal interconnect technology using Benzocyclobutene (BCB) to implement high-speed, low-power photoreceivers based on InGaAs/InP HBTs. Processes for patterning and dry etching BCB to achieve smooth via holes with sloped sidewalls are presented. Excellent planarization of 1.9 {micro}m mesa topographies on InGaAs/InP device structures is demonstrated using scanning electron microscopy (SEM). Additionally, SEM cross sections of both the multi-level metal interconnect via holes and the base emitter via holes required in the HBT IC process are presented. All via holes exhibit sloped sidewalls with slopes of 0.4 {micro}m/{micro}m to 2 {micro}m/{micro}m which are needed to realize a robust interconnect process. Specific contact resistances of the interconnects are found to be less than 6 {times} 10{sup {minus}8} {Omega}cm{sup 2}. Integrated circuits utilizing InGaAs/InP HBTs are fabricated to demonstrate the applicability and compatibility of the multi-level interconnect technology with integrated circuit processing.

  15. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: A novel analytical thermal model for multilevel nano-scale interconnects considering the via effect

    NASA Astrophysics Data System (ADS)

    Zhu, Zhang-Ming; Li, Ru; Hao, Bao-Tian; Yang, Yin-Tang

    2009-11-01

    Based on the heat diffusion equation of multilevel interconnects, a novel analytical thermal model for multilevel nano-scale interconnects considering the via effect is presented, which can compute quickly the temperature of multilevel interconnects, with substrate temperature given. Based on the proposed model and the 65 nm complementary metal oxide semiconductor (CMOS) process parameter, the temperature of nano-scale interconnects is computed. The computed results show that the via effect has a great effect on local interconnects, but the reduction of thermal conductivity has little effect on local interconnects. With the reduction of thermal conductivity or the increase of current density, however, the temperature of global interconnects rises greatly, which can result in a great deterioration in their performance. The proposed model can be applied to computer aided design (CAD) of very large-scale integrated circuits (VLSIs) in nano-scale technologies.

  16. Durability of Metallic Interconnects and Protective Coatings

    SciTech Connect

    Yang, Zhenguo; Stevenson, Jeffry W.

    2009-12-15

    To build up a useful voltage, a number of solid oxide fuel cells (SOFCs) are electrically connected into series in a stack via interconnects, which are placed between adjacent cells. In addition to functioning as a bi-polar electrical connector, the interconnect also acts as a separator plate that separates the fuel at the anode side of one cell from the air at the cathode side on an adjacent cell. During SOFC operation at the high temperatures, the interconnects are thus simultaneously exposed to the oxidizing air at one side and a reducing fuel that can be either hydrogen or hydrocarbon at the other. Besides, they are in contact with adjacent components, such as electrodes or electrical contacts, seals, etc. With steady reduction in SOFC operating temperatures into the low or intermediate range 600-850oC, oxidation resistant alloys are often used to construct interconnects. However, the metallic interconnects may degrade via interactions at their interfaces with surrounding environments or adjacent components, potentially affecting the stability and performance of interconnects and the SOFC stacks. Thus protection layers are applied to metallic interconnects that also intend to mitigate or prevent chromium migration into cells and the cell poisoning. This chapter provides a comprehensive review of materials for metallic interconnects, their degradation and coating protection.

  17. Laser printing of 3D metallic interconnects

    NASA Astrophysics Data System (ADS)

    Beniam, Iyoel; Mathews, Scott A.; Charipar, Nicholas A.; Auyeung, Raymond C. Y.; Piqué, Alberto

    2016-04-01

    The use of laser-induced forward transfer (LIFT) techniques for the printing of functional materials has been demonstrated for numerous applications. The printing gives rise to patterns, which can be used to fabricate planar interconnects. More recently, various groups have demonstrated electrical interconnects from laser-printed 3D structures. The laser printing of these interconnects takes place through aggregation of voxels of either molten metal or of pastes containing dispersed metallic particles. However, the generated 3D structures do not posses the same metallic conductivity as a bulk metal interconnect of the same cross-section and length as those formed by wire bonding or tab welding. An alternative is to laser transfer entire 3D structures using a technique known as lase-and-place. Lase-and-place is a LIFT process whereby whole components and parts can be transferred from a donor substrate onto a desired location with one single laser pulse. This paper will describe the use of LIFT to laser print freestanding, solid metal foils or beams precisely over the contact pads of discrete devices to interconnect them into fully functional circuits. Furthermore, this paper will also show how the same laser can be used to bend or fold the bulk metal foils prior to transfer, thus forming compliant 3D structures able to provide strain relief for the circuits under flexing or during motion from thermal mismatch. These interconnect "ridges" can span wide gaps (on the order of a millimeter) and accommodate height differences of tens of microns between adjacent devices. Examples of these laser printed 3D metallic bridges and their role in the development of next generation electronics by additive manufacturing will be presented.

  18. Recent Development of SOFC Metallic Interconnect

    SciTech Connect

    Wu JW, Liu XB

    2010-04-01

    Interest in solid oxide fuel cells (SOFC) stems from their higher e±ciencies and lower levels of emitted pollu- tants, compared to traditional power production methods. Interconnects are a critical part in SOFC stacks, which connect cells in series electrically, and also separate air or oxygen at the cathode side from fuel at the anode side. Therefore, the requirements of interconnects are the most demanding, i:e:, to maintain high elec- trical conductivity, good stability in both reducing and oxidizing atmospheres, and close coe±cient of thermal expansion (CTE) match and good compatibility with other SOFC ceramic components. The paper reviewed the interconnect materials, and coatings for metallic interconnect materials.

  19. Metallic Nanowire Interconnections for Integrated Circuit Fabrication

    NASA Technical Reports Server (NTRS)

    Ng, Hou Tee (Inventor); Li, Jun (Inventor); Meyyappan, Meyya (Inventor)

    2007-01-01

    A method for fabricating an electrical interconnect between two or more electrical components. A conductive layer is provided on a substarte and a thin, patterned catalyst array is deposited on an exposed surface of the conductive layer. A gas or vapor of a metallic precursor of a metal nanowire (MeNW) is provided around the catalyst array, and MeNWs grow between the conductive layer and the catalyst array. The catalyst array and a portion of each of the MeNWs are removed to provide exposed ends of the MeNWs.

  20. SEMICONDUCTOR TECHNOLOGY Development of spin-on-glass process for triple metal interconnects

    NASA Astrophysics Data System (ADS)

    Li, Peng; Wenbin, Zhao; Guozhang, Wang; Zongguang, Yu

    2010-12-01

    Spin-on-glass (SOG), an interlayer dielectric material applied in liquid form to fill narrow gaps in the sub-dielectric surface and thus conducive to planarization, is an alternative to silicon dioxide (SiO2) deposited using PECVD processes. However, its inability to adhere to metal and problems such as cracking prevent the easy application of SOG technology to provide an interlayer dielectric in multilevel metal interconnect circuits, particularly in university processing labs. This paper will show that a thin layer of CVD SiO2 and a curing temperature below the sintering temperature of the metal interconnect layer will promote adhesion, reduce gaps, and prevent cracking. Electron scanning microscope analysis has been used to demonstrate the success of the improved technique. This optimized process has been used in batches of double-poly, triple-metal CMOS wafer fabrication to date.

  1. Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

    NASA Technical Reports Server (NTRS)

    Routh, D. E.; Sharma, G. C. (Inventor)

    1982-01-01

    The processing of wafer devices to form multilevel interconnects for microelectronic circuits is described. The method is directed to performing the sequential steps of etching the via, removing the photo resist pattern, back sputtering the entire wafer surface and depositing the next layer of interconnect material under common vacuum conditions without exposure to atmospheric conditions. Apparatus for performing the method includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a DC magnetron sputtering system. A gas inlet is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps.

  2. Perspectives on the metallic interconnects for solid oxide fuel cells.

    PubMed

    Zhu, Wei-Zhong; Yan, Mi

    2004-12-01

    The various stages and progress in the development of interconnect materials for solid oxide fuel cells (SOFCs) over the last two decades are reviewed. The criteria for the application of materials as interconnects are highlighted. In-terconnects based on lanthanum chromite ceramics demonstrate many inherent drawbacks and therefore are only useful for SOFCs operating around 1000 degrees C. The advance in the research of anode-supported flat SOFCs facilitates the replacement of ceramic interconnects with metallic ones due to their significantly lowered working temperature. Besides, interconnects made of metals or alloys offer many advantages as compared to their ceramic counterpart. The oxidation response and thermal expansion behaviors of various prospective metallic interconnects are examined and evaluated. The minimization of contact resistance to achieve desired and reliable stack performance during their projected lifetime still remains a highly challenging issue with metallic interconnects. Inexpensive coating materials and techniques may play a key role in pro-moting the commercialization of SOFC stack whose interconnects are constructed of some current commercially available alloys. Alternatively, development of new metallic materials that are capable of forming stable oxide scales with sluggish growth rate and sufficient electrical conductivity is called for.

  3. Silicon-hybrid wafer-scale integration achieved with multilevel aluminum interconnects

    NASA Astrophysics Data System (ADS)

    Takahashi, Grant L.; Kolesar, Edward S.

    A silicon-hybrid wafer-scale integration (WSI) technique has been developed to interconnect complementary metal-oxide semiconductor (CMOS) circuits. Electrical performance tests and processing diagnostics reveal that the interconnect design is very promising. The wafer-scale integrated circuit was fabricated by mounting two CMOS integrated circuit dies into etched wells and then planarizing the surface of the silicon wafer substrate. Next the wafer's surface was coated with a photosensitive polyimide and patterned with vias to accommodate the interconnecting conductors. The CMOS dies were two-bit shift registers and were electrically interconnected with aluminum conductors using conventional silicon processing techniques. A diagnostic evaluation was accomplished to determine the electrical continuity of the conductors and via contacts. When compared to a complementary wire-bonded interconnect scheme, the silicon WSI technology was found to be the superior performer at 1-MHz operating frequencies. Discontinuous interconnects were evaluated, and the failures were identified to occur at the severe topographical steps encountered on the substrate wafer's surface.

  4. Thermal stability of copper silicide passivation layers in copper-based multilevel interconnects

    NASA Astrophysics Data System (ADS)

    Hymes, S.; Kumar, K. S.; Murarka, S. P.; Ding, P. J.; Wang, W.; Lanford, W. A.

    1998-04-01

    Copper thin films were exposed to a dilute silane mixture at temperatures in the range of 190-363 °C. The resulting silicide surface layers were characterized by four-point probe, Rutherford backscattering spectrometry, and x-ray diffraction. A definitive stability regime is observed in which progressively higher copper content phases exist with increasing temperature. Cu3Si, formed in silane, on annealing converts to Cu5Si and eventually to no silicide layer by a silicon diffusion reaction that in an inert ambient drives silicon into underlying copper to form a solid solution. In oxidizing ambients, a similar phenomenon occurs but now silicon also diffuses to surfaces where it oxidizes to form a self-passivating SiO2 layer on surface. These results have important implications governing integration of copper silicide as a passivation layer and silicon hydride based dielectric deposition in copper-based multilevel interconnect in ultralarge scale integration.

  5. Maskless laser writing of microscopic metallic interconnects

    DOEpatents

    Maya, L.

    1995-10-17

    A method of forming a metal pattern on a substrate is disclosed. The method includes depositing an insulative nitride film on a substrate and irradiating a laser beam onto the nitride film, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent remaining in the nitride film as a conductive pattern. 4 figs.

  6. Maskless laser writing of microscopic metallic interconnects

    DOEpatents

    Maya, Leon

    1995-01-01

    A method of forming a metal pattern on a substrate. The method includes depositing an insulative nitride film on a substrate and irradiating a laser beam onto the nitride film, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent remaining in the nitride film as a conductive pattern.

  7. Scaling of Metal Interconnects: Challenges to Functionality and Reliability

    NASA Astrophysics Data System (ADS)

    Engelhardt, M.; Schindler, G.; Traving, M.; Stich, A.; Gabric, Z.; Pamler, W.; Hönlein, W.

    2006-02-01

    Copper-based nano interconnects featuring CDs well beyond today's chip generations and air gap structures were fabricated and subjected to electrical characterization and tests to get already today insight on functionality and reliability aspects of metallization schemes in future semiconductor products. Size effects observed already in today's advanced products will definitely limit the resistivity in future interconnects. Copper diffusion barrier layers were scaled down to the 1nm regime of thicknesses without observable degradation effects regarding adhesion properties and functionality. Interconnect reliability was found to decrease with decreasing barrier thickness. Worst results regarding adhesion properties and interconnect reliability were obtained for vanishing barrier thickness which promotes unrestricted mass flow of copper along the interconnect line. Air gaps were developed and characterized as an alternative approach to porous ultra low-k materials. They allowed the realization of effective k-values of the insulation of 2.4, which meet requirements of chip generations far in the future, while avoiding the integration issues associated with these soft materials. First reliability results obtained with air gaps are comparable with those obtained on full structures. Whereas leakage current behavior with electrical field strength expected to be present between neighboring lines in chip generations during the next 10 years were similar for air gaps and oxide, interconnects insulated by air gaps displayed lower breakdown fields than those insulated by oxide.

  8. Scaling of Metal Interconnects: Challenges to Functionality and Reliability

    SciTech Connect

    Engelhardt, M.; Schindler, G.; Traving, M.; Stich, A.; Gabric, Z.; Pamler, W.; Hoenlein, W.

    2006-02-07

    Copper-based nano interconnects featuring CDs well beyond today's chip generations and air gap structures were fabricated and subjected to electrical characterization and tests to get already today insight on functionality and reliability aspects of metallization schemes in future semiconductor products. Size effects observed already in today's advanced products will definitely limit the resistivity in future interconnects. Copper diffusion barrier layers were scaled down to the 1nm regime of thicknesses without observable degradation effects regarding adhesion properties and functionality. Interconnect reliability was found to decrease with decreasing barrier thickness. Worst results regarding adhesion properties and interconnect reliability were obtained for vanishing barrier thickness which promotes unrestricted mass flow of copper along the interconnect line. Air gaps were developed and characterized as an alternative approach to porous ultra low-k materials. They allowed the realization of effective k-values of the insulation of 2.4, which meet requirements of chip generations far in the future, while avoiding the integration issues associated with these soft materials. First reliability results obtained with air gaps are comparable with those obtained on full structures. Whereas leakage current behavior with electrical field strength expected to be present between neighboring lines in chip generations during the next 10 years were similar for air gaps and oxide, interconnects insulated by air gaps displayed lower breakdown fields than those insulated by oxide.

  9. Interconnected hollow carbon nanospheres for stable lithium metal anodes.

    PubMed

    Zheng, Guangyuan; Lee, Seok Woo; Liang, Zheng; Lee, Hyun-Wook; Yan, Kai; Yao, Hongbin; Wang, Haotian; Li, Weiyang; Chu, Steven; Cui, Yi

    2014-08-01

    For future applications in portable electronics, electric vehicles and grid storage, batteries with higher energy storage density than existing lithium ion batteries need to be developed. Recent efforts in this direction have focused on high-capacity electrode materials such as lithium metal, silicon and tin as anodes, and sulphur and oxygen as cathodes. Lithium metal would be the optimal choice as an anode material, because it has the highest specific capacity (3,860 mAh g(-1)) and the lowest anode potential of all. However, the lithium anode forms dendritic and mossy metal deposits, leading to serious safety concerns and low Coulombic efficiency during charge/discharge cycles. Although advanced characterization techniques have helped shed light on the lithium growth process, effective strategies to improve lithium metal anode cycling remain elusive. Here, we show that coating the lithium metal anode with a monolayer of interconnected amorphous hollow carbon nanospheres helps isolate the lithium metal depositions and facilitates the formation of a stable solid electrolyte interphase. We show that lithium dendrites do not form up to a practical current density of 1 mA cm(-2). The Coulombic efficiency improves to ∼ 99% for more than 150 cycles. This is significantly better than the bare unmodified samples, which usually show rapid Coulombic efficiency decay in fewer than 100 cycles. Our results indicate that nanoscale interfacial engineering could be a promising strategy to tackle the intrinsic problems of lithium metal anodes.

  10. Interconnected hollow carbon nanospheres for stable lithium metal anodes

    NASA Astrophysics Data System (ADS)

    Zheng, Guangyuan; Lee, Seok Woo; Liang, Zheng; Lee, Hyun-Wook; Yan, Kai; Yao, Hongbin; Wang, Haotian; Li, Weiyang; Chu, Steven; Cui, Yi

    2014-08-01

    For future applications in portable electronics, electric vehicles and grid storage, batteries with higher energy storage density than existing lithium ion batteries need to be developed. Recent efforts in this direction have focused on high-capacity electrode materials such as lithium metal, silicon and tin as anodes, and sulphur and oxygen as cathodes. Lithium metal would be the optimal choice as an anode material, because it has the highest specific capacity (3,860 mAh g-1) and the lowest anode potential of all. However, the lithium anode forms dendritic and mossy metal deposits, leading to serious safety concerns and low Coulombic efficiency during charge/discharge cycles. Although advanced characterization techniques have helped shed light on the lithium growth process, effective strategies to improve lithium metal anode cycling remain elusive. Here, we show that coating the lithium metal anode with a monolayer of interconnected amorphous hollow carbon nanospheres helps isolate the lithium metal depositions and facilitates the formation of a stable solid electrolyte interphase. We show that lithium dendrites do not form up to a practical current density of 1 mA cm-2. The Coulombic efficiency improves to ˜99% for more than 150 cycles. This is significantly better than the bare unmodified samples, which usually show rapid Coulombic efficiency decay in fewer than 100 cycles. Our results indicate that nanoscale interfacial engineering could be a promising strategy to tackle the intrinsic problems of lithium metal anodes.

  11. Multi-parameters Characterization of Electromigration Noise in Metal Interconnection

    NASA Astrophysics Data System (ADS)

    He, Liang; Du, Lei; Zhuang, Yi-Qi; Bao, Jun-Lin

    2009-04-01

    In order to overcome the shortcomings of power spectrum density (PSD) method in noise analysis, two non-linear methods were adpoted to analyse electromigration noise in metal interconnection. Correlation integral result showed the dominant component of noise altered from random component to determinate component during electromigration process, which meant that the noise was changed from random signal to chaotic dynamic signal. Multiscale entropy result showed the complexity of nosie decreased duirng electromigraiton process, which reflected the disorder degree of electromigration system decreased continually.

  12. A metallic interconnect for a solid oxide fuel cell stack

    NASA Astrophysics Data System (ADS)

    England, Diane Mildred

    A solid oxide fuel cell (SOFC) electrochemically converts the chemical energy of reaction into electrical energy. The commercial success of planar, SOFC stack technology has a number of challenges, one of which is the interconnect that electrically and physically connects the cathode of one cell to the anode of an adjacent cell in the SOFC stack and in addition, separates the anodic and cathodic gases. An SOFC stack operating at intermediate temperatures, between 600°C and 800°C, can utilize a metallic alloy as an interconnect material. Since the interconnect of an SOFC stack must operate in both air and fuel environments, the oxidation kinetics, adherence and electronic resistance of the oxide scales formed on commercial alloys were investigated in air and wet hydrogen under thermal cycling conditions to 800°C. The alloy, Haynes 230, exhibited the slowest oxidation kinetics and the lowest area-specific resistance as a function of oxidation time of all the alloys in air at 800°C. However, the area-specific resistance of the oxide scale formed on Haynes 230 in wet hydrogen was unacceptably high after only 500 hours of oxidation, which was attributed to the high resistivity of Cr2O3 in a reducing atmosphere. A study of the electrical conductivity of the minor phase manganese chromite, MnXCr3-XO4, in the oxide scale of Haynes 230, revealed that a composition closer to Mn2CrO4 had significantly higher electrical conductivity than that closer to MnCr 2O4. Haynes 230 was coated with Mn to form a phase closer to the Mn2CrO4 composition for application on the fuel side of the interconnect. U.S. Patent No. 6,054,231 is pending. Although coating a metallic alloy is inexpensive, the stringent economic requirements of SOFC stack technology required an alloy without coating for production applications. As no commercially available alloy, among the 41 alloys investigated, performed to the specifications required, a new alloy was created and designated DME-A2. The oxide scale

  13. Fabrication of Ultralow Density Interconnected Pure Metal Foams

    NASA Astrophysics Data System (ADS)

    Burks, Edward C.; Gilbert, Dustin A.; Liu, Kai; Kucheyev, Sergei O.; Colvin, Jeffrey D.; Felter, Thomas E.

    Ultra-low density metallic nanostructures have been shown to possess interesting thermal, electrical, magnetic, chemical and mechanical properties due to their extremely high surface areas, nanoscale geometries and high porosities. Here we report the synthesis of pure metal foams using interconnected metallic nanowires with densities as low as 0.1% of their bulk density that are still mechanically stable. The highly porous monoliths are macroscopic in size (several mm) and can be created in a wide variety of shapes for application-specific needs. Preliminary studies of such metal foams have already revealed fascinating mechanical and magnetic properties, since the physical dimensions of the foams are below some of the basic length scales that govern the material properties. These foams have been used as targets for ultrabright x-ray sources. They also have a wide variety of other potential applications such as photovoltaic devices, supercapacitors, catalysts, coatings, fuel cells, etc. This work has been supported by DTRA #BRCALL08-Per3-C-2-0006, and in part by NSF DMR-1008791 and DMR-1543582. Work at LLNL was performed under the auspices of the U.S. DOE by LLNL under Contract DE-AC52-07NA27344.

  14. Performance optimization of a free space optical interconnect system with a metal-semiconductor-metal detector

    NASA Astrophysics Data System (ADS)

    Al-Ababneh, Nedal; Khader, Ateka

    2011-08-01

    In this paper we study the possibility and the potentiality of using metal semiconductor-metal photodetector (MSM-PD) in three-dimensional parallel free space optical interconnect (FSOI) systems. The signal-to-noise ratio (SNR) and time response are used as performance measures to optimize the geometry of MSM-PD used in FSOI systems. Both SNR and time response are evaluated, analyzed, and their dependence on feature parameters of the MSM-PD, including finger size, spacing, and number of fingers, are considered. Based on the results obtained, we show that the use of MSM-PD in FSOI improves the interconnect speed at a given acceptable SNR.

  15. Dual-environment effects on the oxidation of metallic interconnects

    SciTech Connect

    Holcomb, G.R.; Ziomek-Moroz, M.; Covino, B.S., Jr.; Bullard, S.J.

    2006-08-01

    Metallic interconnects in solid oxide fuel cells are exposed to a dual environment: fuel on one side (i.e., H2 gas) and oxidizer on the other side (i.e., air). It has been observed that the oxidation behavior of thin stainless steel sheet in air is changed by the presence of H2 on the other side of the sheet. The resulting dual-environment scales are flaky and more friable than the single-environment scales. The H2 disrupts the scale on the air side. A model to explain some of the effects of a dual environment is presented where hydrogen diffusing through the stainless steel sheet reacts with oxygen diffusing through the scale to form water vapor, which has sufficient vapor pressure to mechanically disrupt the scale. Experiments on preoxidized 316L stainless steel tubing exposed to air-air, H2-air, and H2-Ar environments are reported in support of the model.

  16. Dual Environment Effects on the Oxidation of Metallic Interconnects

    SciTech Connect

    Holcomb, Gordon R.; Ziomek-Moroz, Malgorzata; Cramer, Stephen D.; Covino, Jr., Bernard S.; and Bullard, Sophie J.

    2004-10-20

    Metallic interconnects in solid oxide fuel cells are exposed to a dual environment: fuel on one side (i.e. H2 gas) and oxidizer on the other side (i.e. air). It has been observed that the oxidation behavior of thin stainless steel sheet in air is changed by the presence of H2 on the other side of the sheet. The resulting dual environment scales are flaky and more friable than the single environment scales. The H2 disrupts the scale on the air-side. A model to explain some of the effects of a dual environment is presented where hydrogen diffusing through the stainless steel sheet reacts with oxygen diffusing through the scale to form water vapor, which has sufficient vapor pressure to mechanically disrupt the scale. Experiments on preoxidized 316L stainless steel tubing exposed to air/air, H2/air, and H2/Ar environments are reported in support of the model.

  17. On the State of the Art of Metal Interconnects for SOFC Application

    SciTech Connect

    Jablonski@netl.doe.gov

    2011-02-27

    One of the recent developments for Solid Oxide Fuel Cells (SOFC) is oxide component materials capable of operating at lower temperatures such as 700-800C. This lower temperature range has provided for the consideration of metallic interconnects which have several advantages over ceramic interconnects: low cost, ease in manufacturing, and high conductivity. Most metals and alloys will oxidize under both the anode and cathode conditions within an SOFC, thus a chief requirement is that the base metal oxide scale must be electrically conductive since this constitutes the majority of the electrical resistance in a metallic interconnect. Common high temperature alloys form scales that contain chrome, silicon and aluminum oxides among others. Under SOFC operating conditions chrome oxide is a semi-conductor while silicon and aluminum oxides are insulators. In this talk we will review the evolution in candidate alloys and surface modifications which constitute an engineered solution for SOFC interconnect applications.

  18. Metal Interconnects for Solid Oxide Fuel Cell Power Systems

    SciTech Connect

    S. Elangovan

    2006-04-01

    Interconnect development is identified by the US Department of energy as a key technical area requiring focused research to meet the performance and cost goals under the Solid State Energy Conversion Alliance initiative. In the Phase I SECA Core Technology Program, Ceramatec investigated a commercial ferritic stainless steel composition for oxidation resistance properties by measuring the weight gain when exposed to air at the fuel cell operating temperature. A pre-treatment process that results in a dense, adherent scale was found to reduce the oxide scale growth rate significantly. A process for coating the surface of the alloy in order to reduce the in-plane resistance and potentially inhibit chromium oxide evaporation was also identified. The combination of treatments provided a very low resistance through the scale. The resistance measured was as low as 10 milliohm-cm2 at 750 C in air. The oxide scale was also found to be stable in humidified air at 750 C. The resistance value was stable over several thermal cycles. A similar treatment and coating for the fuel side of the interconnect also showed an exceptionally low resistance of one milliohm-cm2 in humidified hydrogen at 750 c, and was stable through multiple thermal cycles. Measurement of interconnect resistance when it was exposed to both air and humidified hydrogen on opposite sides also showed low, stable resistance after additional modification to the pre-treatment process. Resistance stacks, using an interconnect stack with realistic gas flows, also provided favorable results. Chromium evaporation issue however requires testing of fuel stacks and was outside of the scope of this project. based on results to-date, the alloy selection and the treatment processes appear to be well suited for SOFC interconnect application.

  19. Determination of Interfacial Adhesion Strength between Oxide Scale and Substrate for Metallic SOFC Interconnects

    SciTech Connect

    Sun, Xin; Liu, Wenning N.; Stephens, Elizabeth V.; Khaleel, Mohammad A.

    2008-01-21

    The interfacial adhesion strength between the oxide scale and the substrate is crucial to the reliability and durability of metallic interconnects in SOFC operating environments. It is necessary, therefore, to establish a methodology to quantify the interfacial adhesion strength between the oxide scale and the metallic interconnect substrate, and furthermore to design and optimize the interconnect material as well as the coating materials to meet the design life of an SOFC system. In this paper, we present an integrated experimental/analytical methodology for quantifying the interfacial adhesion strength between oxide scale and a ferritic stainless steel interconnect. Stair-stepping indentation tests are used in conjunction with subsequent finite element analyses to predict the interfacial strength between the oxide scale and Crofer 22 APU substrate.

  20. LaCrO{sub 3}-dispersed Cr for metallic interconnect of planar SOFC

    SciTech Connect

    Song, Rak-Hyun; Shin, Dong Ryul; Dokiya, Masayuki

    1996-12-31

    In the planar SOFC, the interconnect materials plays two roles as an electrical connection and as a gas separation plate in a cell stack. The interconnect materials must be chemically stable in reducing and oxidizing environments, and have high electronic conductivity, high thermal conductivity, matching thermal expansion with an electrolyte, high mechanical strength, good fabricability, and gas tightness. Lanthanum chromite so far has been mainly used as interconnect materials in planar SOFC. However, the ceramic materials are very weak in mechanical strength and have poor machining property as compared with metal. Also the metallic materials have high electronic conductivity and high thermal conductivity. Recently some researchers have studied metallic interconnects such as Al{sub 2}O{sub 3}/Inconel 600 cermet, Ni-20Cr coated with (LaSr)CoO{sub 3}, and Y{sub 2}O{sub 3-} or La{sub 2}O{sub 3}-dispersed Cr alloy. These alloys have still some problems because Ni-based alloys have high thermal expansion, the added Al{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and La{sub 2}O{sub 3} to metals have no electronic conductivity, and the oxide formed on the surface of Cr alloy has high volatility. To solve these problems, in this study, LaCrO{sub 3}-dispersed Cr for metallic interconnect of planar SOFC was investigated. The LaCrO{sub 3}-dispersed Cr can be one candidate of metallic interconnect because LaCrO{sub 3} possesses electronic conductivity and Cr metal has relatively low thermal expansion. The content of 25 vol.% LaCrO{sub 3} Was selected on the basis of a theoretically calculated thermal expansion. The thermal expansion, electrical and oxidation properties were examined and the results were discussed as related to SOFC requirements.

  1. METAL INTERCONNECTS FOR SOLID OXIDE FUEL CELL POWER SYSTEMS

    SciTech Connect

    S. Elangovan; S. Balagopal; M. Timper; I. Bay; D. Larsen; J. Hartvigsen

    2003-10-01

    Interconnect development is identified by the U.S. Department of Energy as a key technical area requiring focused research to meet the performance and cost goals under the Solid State Energy Conversion Alliance initiative. In the Phase I SECA Core Technology Program, Ceramatec investigated a commercial ferritic stainless steel composition for oxidation resistance properties by measuring the weight gain when exposed to air at the fuel cell operating temperature. A pre-treatment process that results in a dense, adherent scale was found to reduce the oxide scale growth rate significantly. A process for coating the surface of the alloy in order to reduce the in-plane resistance and potentially inhibit chromium oxide evaporation was also identified. The combination of treatments provided a very low resistance through the scale. The resistance measured was as low as 10 milliohm-cm{sup 2} at 750 C in air. The oxide scale was found to be stable in humidified air at 750 C. The resistance value was stable over several thermal cycles. A similar treatment and coating for the fuel side of the interconnect also showed an exceptionally low resistance of one milliohm-cm{sup 2} in humidified hydrogen at 750 C, and was stable through multiple thermal cycles. Analysis of the scale after exposure to various atmospheres showed the presence of a stable composition. When exposed to a dual (air and hydrogen) atmosphere however, the scale composition contains a mixture of phases. Based on results to-date, the alloy selection and the treatment processes appear to be well suited for SOFC interconnect application.

  2. Diffusion of co-sputtered metals as bonding materials for 3D interconnects during thermal treatments.

    PubMed

    Hsu, S Y; Chen, H Y; Chen, K N

    2012-03-01

    Diffusion behaviors of co-sputtered metals during thermal treatments were investigated, where these co-sputtered metals can be used as bonding materials for 3D Interconnects. In this paper, we report the diffusion behaviors and discuss the diffusion mechanisms of co-sputtered metals before and after annealing. Atom and vacancy volume, vacancy formation energy, and activation energy are proposed to explain the diffusion direction and diffusion rate among different co-sputtered metals. Based on the excellent bonding performance of this method, Cu/metal co-sputtering bonding is considered as a potential candidate for advanced bonding technology.

  3. Super-stretchable metallic interconnects on polymer with a linear strain of up to 100%

    SciTech Connect

    Arafat, Yeasir; Dutta, Indranath; Panat, Rahul

    2015-08-24

    Metal interconnects in flexible and wearable devices are heterogeneous metal-polymer systems that are expected to sustain large deformation without failure. The principal strategy to make strain tolerant interconnect lines on flexible substrates has comprised of creating serpentine structures of metal films with either in-plane or out-of-plane waves, using porous substrates, or using highly ductile materials such as gold. The wavy and helical serpentine patterns preclude high-density packing of interconnect lines on devices, while ductile materials such as Au are cost prohibitive for real world applications. Ductile copper films can be stretched if bonded to the substrate, but show high level of cracking beyond few tens of % strain. In this paper, we demonstrate a material system consisting of Indium metal film over an elastomer (PDMS) with a discontinuous Cr layer such that the metal interconnect can be stretched to extremely high linear strain (up to 100%) without any visible cracks. Such linear strain in metal interconnects exceeds that reported in literature and is obtained without the use of any geometrical manipulations or porous substrates. Systematic experimentation is carried out to explain the mechanisms that allow the Indium film to sustain the high strain level without failure. The islands forming the discontinuous Cr layer are shown to move apart from each other during stretching without delamination, providing strong adhesion to the Indium film while accommodating the large strain in the system. The Indium film is shown to form surface wrinkles upon release from the large strain, confirming its strong adhesion to PDMS. A model is proposed based upon the observations that can explain the high level of stretch-ability of the Indium metal film over the PDMS substrate.

  4. Bipolar plating of metal contacts onto oxide interconnection for solid oxide electrochemical cell

    DOEpatents

    Isenberg, Arnold O.

    1987-01-01

    Disclosed is a method of forming an adherent metal deposit on a conducting layer of a tube sealed at one end. The tube is immersed with the sealed end down into an aqueous solution containing ions of the metal to be deposited. An ionically conducting aqueous fluid is placed inside the tube and a direct current is passed from a cathode inside the tube to an anode outside the tube. Also disclosed is a multi-layered solid oxide fuel cell tube which consists of an inner porous ceramic support tube, a porous air electrode covering the support tube, a non-porous electrolyte covering a portion of the air electrode, a non-porous conducting interconnection covering the remaining portion of the electrode, and a metal deposit on the interconnection.

  5. Bipolar plating of metal contacts onto oxide interconnection for solid oxide electrochemical cell

    DOEpatents

    Isenberg, A.O.

    1987-03-10

    Disclosed is a method of forming an adherent metal deposit on a conducting layer of a tube sealed at one end. The tube is immersed with the sealed end down into an aqueous solution containing ions of the metal to be deposited. An ionically conducting aqueous fluid is placed inside the tube and a direct current is passed from a cathode inside the tube to an anode outside the tube. Also disclosed is a multi-layered solid oxide fuel cell tube which consists of an inner porous ceramic support tube, a porous air electrode covering the support tube, a non-porous electrolyte covering a portion of the air electrode, a non-porous conducting interconnection covering the remaining portion of the electrode, and a metal deposit on the interconnection. 1 fig.

  6. Highly conductive metal interconnects on three-dimensional objects fabricated with omnidirectional ink jet printing technology

    NASA Astrophysics Data System (ADS)

    Yoshida, Yasunori; Wada, Hikaru; Izumi, Konami; Tokito, Shizuo

    2017-05-01

    In this work, we demonstrate that highly conductive metal interconnects can be fabricated on the surface of three-dimensional objects using “omnidirectional ink jet” (OIJ) printing technology. OIJ printing technology makes it possible to perform ink jet printing in all directions by combining the motion of a 6-axis vertically articulated robot with precise positioning and a thermal drying process, which allows for the printing of stacked layers. By using OIJ technology, we were the first to successfully fabricate printed interconnect layers having a very low electrical resistance of 12 mΩ over a 10 mm length. Moreover, the results of the high-current test demonstrated that the printed interconnects can withstand high-current-flow of 5 A for 30 min or more.

  7. Fabrication and characterization of hollow metal waveguides for optical interconnect applications

    NASA Astrophysics Data System (ADS)

    Bicknell, Robert; King, Laura; Otis, Charles E.; Yeo, Jong-Souk; Meyer, Neal; Kornilovitch, Pavel; Lerner, Scott; Seals, Lenward

    2009-06-01

    As data rates continue to increase in high-performance computer systems and networks, it is becoming more difficult for copper-based interconnects to keep pace. An alternative approach to meet these requirements is to move to optical-based interconnect technologies which offer a number of advantages over the legacy copper-based solutions. In order to meet the stringent requirements of high performance and low cost, manufacturable waveguide technologies must be developed. Past solutions have often employed polymer waveguide technologies, which can be expensive and limited by modal dispersion. In the present work, hollow metal waveguides (HMWGs) are investigated as a potential alternative. These waveguides demonstrate very low optical losses of <0.05 dB/cm and the capability to transmit at extremely high data rates. The fabrication, modeling, characterization of the HMWGs are discussed to enable photonic interconnect solutions for future generations of computer and server products.

  8. On the deformation mechanisms and electrical behavior of highly stretchable metallic interconnects on elastomer substrates

    NASA Astrophysics Data System (ADS)

    Arafat, Yeasir; Dutta, Indranath; Panat, Rahul

    2016-09-01

    Flexible metallic interconnects are highly important in the emerging field of deformable/wearable electronics. In our previous work [Arafat et al., Appl. Phys. Lett. 107, 081906 (2015)], interconnect films of Indium metal, periodically bonded to an elastomer substrate using a thin discontinuous/cracked adhesion interlayer of Cr, were shown to sustain a linear strain of 80%-100% without failure during repeated cycling. In this paper, we investigate the mechanisms that allow such films to be stretched to a large strain without rupture along with strategies to prevent a deterioration in their electrical performance under high linear strain. Scanning Electron Microscopy and Digital Image Correlation are used to map the strain field of the Cr adhesion interlayer and the In interconnect film when the elastomer substrate is stretched. It is shown that the Cr interlayer morphology, consisting of islands separated by bi-axial cracks, accommodates the strain primarily by widening of the cracks between the islands along the tensile direction. This behavior is shown to cause the strain in the In interconnect film to be discontinuous and concentrated in bands perpendicular to the loading direction. This localization of strain at numerous periodically spaced locations preempts strain-localization at one location and makes the In film highly stretchable by delaying rupture. Finally, the elastic-plastic mismatch-driven wrinkling of the In interconnect upon release from first loading cycle is utilized to delay the onset of plasticity and allow the interconnect to be stretched repeatedly up to 25% linear strain in subsequent cycles without a deterioration of its electrical performance.

  9. Mechanism maps for electromigration-induced failure of metal and alloy interconnects

    NASA Astrophysics Data System (ADS)

    Andleigh, Vaibhav K.; Srikar, V. T.; Park, Young-Joon; Thompson, Carl V.

    1999-12-01

    Numerical simulation of electromigration-induced stress evolution provides a versatile technique for analyzing the reliability of interconnects under a wide range of conditions. We study the evolution of stress in confined, layered, stud-terminated, pure metal, and alloy interconnects. Failure times are estimated using different failure criteria associated with different failure modes for broad ranges of line lengths and current densities. The simulation results can be conveniently catalogued through construction of failure mechanism maps that display domains of dominance of different failure modes. Failure mechanism maps are constructed for several different failure criteria, illustrating regimes of line immortality, void-nucleation-limited failure, void-growth-limited failure, and compressive failure as a function of line length and current density. The effects of changes in failure criteria, geometry, and composition are studied for representative interconnect stacks at accelerated and service temperatures. Failure maps may be used to: (i) provide an overview of predicted reliability behavior, (ii) assess how data from accelerated tests can be accurately scaled to service conditions, and (iii) predict the effects of changes in interconnect and shunt-layer materials and dimensions on interconnect reliability.

  10. Oxidation Resistant, Cr Retaining, Electrically Conductive Coatings on Metallic Alloys for SOFC Interconnects

    SciTech Connect

    Vladimir Gorokhovsky

    2008-03-31

    This report describes significant results from an on-going, collaborative effort to enable the use of inexpensive metallic alloys as interconnects in planar solid oxide fuel cells (SOFCs) through the use of advanced coating technologies. Arcomac Surface Engineering, LLC, under the leadership of Dr. Vladimir Gorokhovsky, is investigating filtered-arc and filtered-arc plasma-assisted hybrid coating deposition technologies to promote oxidation resistance, eliminate Cr volatility, and stabilize the electrical conductivity of both standard and specialty steel alloys of interest for SOFC metallic interconnect (IC) applications. Arcomac has successfully developed technologies and processes to deposit coatings with excellent adhesion, which have demonstrated a substantial increase in high temperature oxidation resistance, stabilization of low Area Specific Resistance values and significantly decrease Cr volatility. An extensive matrix of deposition processes, coating compositions and architectures was evaluated. Technical performance of coated and uncoated sample coupons during exposures to SOFC interconnect-relevant conditions is discussed, and promising future directions are considered. Cost analyses have been prepared based on assessment of plasma processing parameters, which demonstrate the feasibility of the proposed surface engineering process for SOFC metallic IC applications.

  11. Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections

    DOEpatents

    Griffiths, Stewart K.; Nilson, Robert H.; Hruby, Jill M.

    2002-01-01

    An apparatus and procedure for performing microfabrication of detailed metal structures by electroforming metal deposits within small cavities. Two primary areas of application are: the LIGA process which manufactures complex three-dimensional metal parts and the damascene process used for electroplating line and via interconnections of microelectronic devices. A porous electrode held in contact or in close proximity with a plating substrate or mold top to ensure one-dimensional and uniform current flow into all mold cavities is used. Electrolyte is pumped over the exposed surface of the porous electrode to ensure uniform ion concentrations at this external surface. The porous electrode prevents electrolyte circulation within individual mold cavities, avoiding preferential enhancement of ion transport in cavities having favorable geometries. Both current flow and ion transport are one-dimensional and identical in all mold cavities, so all metal deposits grow at the same rate eliminating nonuniformities of the prior art.

  12. Mechanical reliability and life prediction of coated metallic interconnects within solid oxide fuel cells

    DOE PAGES

    Xu, Zhijie; Xu, Wei; Stephens, Elizabeth; ...

    2017-07-03

    Metallic cell interconnects (IC) made of ferritic stainless steels, i.e., iron-based alloys, have been increasingly favored in the recent development of planar solid oxide fuel cells (SOFCs) because of their advantages in excellent imperviousness, low electrical resistance, ease in fabrication, and cost effectiveness. Typical SOFC operating conditions inevitably lead to the formation of oxide scales on the surface of ferritic stainless steel, which could cause delamination, buckling, and spallation resulting from the mismatch of the coefficient of thermal expansion and eventually reduce the lifetime of the interconnect components. Various protective coating techniques have been applied to alleviate these drawbacks. Inmore » the present work, a fracture-mechanics-based quantitative modeling framework has been established to predict the mechanical reliability and lifetime of the spinel-coated, surface-modified specimens under an isothermal cooling cycle. Analytical solutions have been formulated to evaluate the scale/substrate interfacial strength and determine the critical oxide thickness in terms of a variety of design factors, such as coating thickness, material properties, and uncertainties. In conclusion, the findings then are correlated with the experimentally measured oxide scale growth kinetics to quantify the predicted lifetime of the metallic interconnects.« less

  13. Impact of Self-Aligned Metal Capping Method on Submicron Copper Interconnections

    NASA Astrophysics Data System (ADS)

    Saito, Tatsuyuki; Noguchi, Junji; Kubo, Maki; Imai, Toshinori; Ito, Yuko

    2004-05-01

    Novel copper (Cu) interconnection technology using self-aligned metallic cap was developed to reduce effective dielectric constant (k-value) as well as to improve reliability. Tungsten (W) was preferentially deposited on Cu wiring by chemical vapor deposition (CVD) using tungsten hexa-fluoride (WF6) and hydrogen (H2). Though W selectivity loss occurred without additional cleaning because of Cu contamination on the dielectric film during the chemical mechanical polishing (CMP) process, this problem was solved by surface cleaning prior to W-CVD combined with lift-off process just after it, resulting in improved yield in the test element group (TEG) during a short check. Using these processes, we fabricated a large-scale integration (LSI) with 4-level Cu interconnections eliminating capping barrier dielectrics such as silicon nitride (SiN), which had a relatively high k-value, and confirmed that there was no degradation in LSI yield. We also confirmed effective k-value was reduced by comparing propagation delay in conventional and metal-capped interconnections.

  14. Photolithography-Based Patterning of Liquid Metal Interconnects for Monolithically Integrated Stretchable Circuits.

    PubMed

    Park, Chan Woo; Moon, Yu Gyeong; Seong, Hyejeong; Jung, Soon Won; Oh, Ji-Young; Na, Bock Soon; Park, Nae-Man; Lee, Sang Seok; Im, Sung Gap; Koo, Jae Bon

    2016-06-22

    We demonstrate a new patterning technique for gallium-based liquid metals on flat substrates, which can provide both high pattern resolution (∼20 μm) and alignment precision as required for highly integrated circuits. In a very similar manner as in the patterning of solid metal films by photolithography and lift-off processes, the liquid metal layer painted over the whole substrate area can be selectively removed by dissolving the underlying photoresist layer, leaving behind robust liquid patterns as defined by the photolithography. This quick and simple method makes it possible to integrate fine-scale interconnects with preformed devices precisely, which is indispensable for realizing monolithically integrated stretchable circuits. As a way for constructing stretchable integrated circuits, we propose a hybrid configuration composed of rigid device regions and liquid interconnects, which is constructed on a rigid substrate first but highly stretchable after being transferred onto an elastomeric substrate. This new method can be useful in various applications requiring both high-resolution and precisely aligned patterning of gallium-based liquid metals.

  15. Suppression of Electromigration Early Failure of Cu/Porous Low-k Interconnects Using Dummy Metal

    NASA Astrophysics Data System (ADS)

    Kakuhara, Yumi; Yokogawa, Shinji; Hiroi, Masayuki; Takewaki, Toshiyuki; Ueno, Kazuyoshi

    2009-09-01

    The electromigration (EM) lifetime of Cu/porous low-k interconnects was evaluated by EM experiments in which the effect of back-flow stress was negligible. The EM lifetime of the downstream mode was reduced using a porous low-k film (SiOCH) as an intermetal dielectric (IMD) in comparison with using a SiO2 dielectric. The reduction in EM lifetime was observed only at low cumulative failure probability, considered as “early failure”. The early failure was caused by the formation of a slit void under a via. It was found that the early failure was suppressed by placing a dummy metal near the metal/via contact that inhibited the formation of a slit void. The EM degradation of Cu/porous low-k interconnects is likely to be caused by the mechanical properties of porous low-k film. The dummy metal supports the porous low-k film near the metal/via contact, which leads to improved EM.

  16. Corrosion and Protection of Metallic Interconnects in Solid Oxide Fuel Cells

    SciTech Connect

    Yang, Z Gary; Stevenson, Jeffry W.; Singh, Prabhakar

    2007-12-09

    Energy security and increased concern over environmental protection have spurred a dramatic world-wide growth in research and development of fuel cells, which electrochemically convert incoming fuel into electricity with no or low pollution. Fuel cell technology has become increasingly attractive to a number of sectors, including utility, automotive, and defense industries. Among the various types of fuel cells, solid oxide fuel cells (SOFCs) operate at high temperature (typically 650-1,000 C) and have advantages in terms of high conversion efficiency and the flexibility of using hydrocarbon fuels, in addition to hydrogen. The high temperature operation, however, can lead to increased mass transport and interactions between the surrounding environment and components that are required to be stable during a lifetime of thousands of hours and up to hundreds of thermal cycles. For stacks with relatively low operating temperatures (<800 C), the interconnects that are used to electrically connect a number of cells in series are typically made from cost-effective metals or alloys. The metallic interconnects must demonstrate excellent stability in a very challenging environment during SOFC operation, as they are simultaneously exposed to both an oxidizing (air) environment on the cathode side and a reducing environment (hydrogen or a reformed hydrocarbon fuel) on the anode side. Other challenges include the fact that water vapor is likely to be present in both of these environments, and the fuel is likely to contain impurities, such as sulfides. Since the fuel is usually a reformed hydrocarbon fuel, such as natural gas, coal gas, biogas, gasoline, etc., the interconnect is exposed to a wet carbonaceous environment at the anode side. Finally, the interconnect must be stable towards any adjacent components, such as electrodes, seals and electrical contact materials, with which it is in physical contact.

  17. Processing and Properties of Metallic Foams for Solid-Oxide Fuel Cell Interconnects

    NASA Astrophysics Data System (ADS)

    Scott, Justin Aaron

    Metallic foams possess a unique array of mechanical, thermal, and acoustic properties that have led to an increasing portfolio of potential applications. One of the newest additions includes solid-oxide fuel cells (SOFCs), where commercialization hinges on the development of improved materials and designs that can withstand the severe operational requirements of high temperature (up to 850 °C) and long service lifetimes (>10,000 hours). These demands place strict design limitations on the interconnect, which serves as a current path and fluid barrier between fuel and oxidant gases in the SOFC stack. Materials with excellent oxidation and creep resistance are sought. Chromia-forming Iron and Nickel-based alloy families have shown the most promise in preliminary studies. While a wealth of knowledge is available on these alloys as dense interconnects, limited research has also explored the option of porous metallic interconnects that offer the potential for cheaper, lightweight, and more mechanically robust stacks. This thesis aims to provide a more thorough examination of porous metallic interconnect construction beginning with refinement of the place-holder replication techniques to create fully-interconnected, open porosity in a E-Brite (Fe-26Cr-1Mo, wt.%) and J5 (Ni-22.5Mo-12.5Cr-1Ti-0.5Mn-0.1Al-0.1Y, wt.%) alloy. Mechanical response of the E-Brite was examined at room temperature and found good agreement with existing, beam-based models for stiffness and yield strength. High temperature mechanical deformation was also recorded and a creep strengthening effect due to the formation of oxide was characterized. Electrochemical properties of porous E-Brite including the activation energy of oxide formation and area-specific resistance were also determined and found to be comparable to existing literature on bulk response. Finite element modeling (FEM) of the creep of unoxidized and oxidized E-Brite was also performed and successfully captured the qualitative behavior

  18. Solar cell welded interconnection development program. [parallel gap and ultrasonic metal-metal bonding

    NASA Technical Reports Server (NTRS)

    Katzeff, J. S.

    1974-01-01

    Parallel gap welding and ultrasonic bonding techniques were developed for joining selected interconnect materials (silver, aluminum, copper, silver plated molybdenum and Kovar) to silver-titanium and aluminum contact cells. All process variables have been evaluated leading to establishment of optimum solar cell, interconnect, electrodes and equipment criteria for obtainment of consistent high quality welds. Applicability of nondestructive testing of solar cell welds has been studied. A pre-weld monitoring system is being built and will be utilized in the numerically controlled parallel gap weld station.

  19. Electrodeposited porous metal oxide films with interconnected nanoparticles applied as anode of lithium ion battery

    SciTech Connect

    Xiao, Anguo Zhou, Shibiao; Zuo, Chenggang; Zhuan, Yongbing; Ding, Xiang

    2014-12-15

    Highlights: • Highly porous NiO film is prepared by a co-electrodeposition method. • Porous NiO film is composed of interconnected nanoparticles. • Porous structure is favorable for fast ion/electron transfer. • Porous NiO film shows good lithium ion storage properties. - Abstract: Controllable synthesis of porous metal oxide films is highly desirable for high-performance electrochemical devices. In this work, a highly porous NiO film composed of interconnected nanoparticles is prepared by a simple co-electrodeposition method. The nanoparticles in the NiO film have a size ranging from 30 to 100 nm and construct large-quantity pores of 20–120 nm. As an anode material for lithium ion batteries, the highly porous NiO film electrode delivers a high discharge capacity of 700 mA h g{sup −1} at 0.2 C, as well as good high-rate performance. After 100 cycles at 0.2 C, a specific capacitance of 517 mA h g{sup −1} is attained. The good electrochemical performance is attributed to the interconnected porous structure, which facilitates the diffusion of ion and electron, and provides large reaction surface area leading to improved performance.

  20. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    SciTech Connect

    Ito, Kota Nishikawa, Kazutaka; Iizuka, Hideo

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  1. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO2) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  2. Optical Interconnect

    NASA Astrophysics Data System (ADS)

    Gaburro, Zeno

    The progress of silicon electronic industry is based on scaling down the minimum feature size of integrated circuits. Speed, density and costs of devices improve with scaling, but unfortunately the performance of interconnect worsens, both in terms of speed and power consumption. This issue -- the ``interconnect bottleneck'' -- is envisioned as a critical showstopper of electronic industry in the near future. The physical reason behind the interconnect bottleneck is the resistive nature of metals. The introduction of copper in place of aluminum has temporarily improved the interconnect performance, but on the other hand in a few years a more disruptive solution will be required in order to keep the current pace of progress. Optical interconnect is an intriguing alternative to metallic wires, because light can travel in dielectrics, and even in vacuum. At present, optical technology in silicon is not mature for industrial implementation. For this very same reason, however, it is also rich of research opportunities with large potential payoff. The rationale of this chapter has been to trace a snapshot of the current interconnect limitations; to point out the basic differences between the electrical and optical interconnect from different perspectives, ranging from basic physics up to system layouts; and to give a flavor of suggested practical realization of optical solutions. Any of these goals would be too ambitious for a book chapter without a hopefully rich and up-to-date bibliography.

  3. Tubular solid oxide fuel cells with porous metal supports and ceramic interconnections

    SciTech Connect

    Huang, Kevin; Ruka, Roswell J

    2012-05-08

    An intermediate temperature solid oxide fuel cell structure capable of operating at from 600.degree. C. to 800.degree. C. having a very thin porous hollow elongated metallic support tube having a thickness from 0.10 mm to 1.0 mm, preferably 0.10 mm to 0.35 mm, a porosity of from 25 vol. % to 50 vol. % and a tensile strength from 700 GPa to 900 GPa, which metallic tube supports a reduced thickness air electrode having a thickness from 0.010 mm to 0.2 mm, a solid oxide electrolyte, a cermet fuel electrode, a ceramic interconnection and an electrically conductive cell to cell contact layer.

  4. Simulation of Fundamental Properties of CNT- and GNR-Metal Interconnects for Development of New Nanosensor Systems

    NASA Astrophysics Data System (ADS)

    Shunin, Yuri N.; Zhukovskii, Yu. F.; Burlutskaya, N. Yu.; Gopeyenko, V. I.; Bellucci, S.

    Cluster approach based on the multiple scattering theory formalism, realistic analytical and coherent potentials, as well as effective medium approximation (EMA-CPA), can be effectively used for nano-sized systems modeling. Major attention is paid now to applications of carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) with various morphology which possess unique physical properties in nanoelectronics, e.g., contacts of CNTs or (GNRs) with other conducting elements of a nanocircuit, which can be promising candidates for interconnects in high-speed electronics. The main problems solving for resistance C-Me junctions with metal particles appear due to the influence of chirality effects in the interconnects of single-wall (SW) and multi-wall (MW) CNTs, single-layer (SL) and multi-layer (ML) GNRs with the fitting metals (Me = Ni, Cu, Ag, Pd, Pt, Au) for the predefined carbon system geometry. Using the models of `liquid metal' and `effective bonds' developed in the framework of the presented approach and Landauer theory, we can predict resistivity properties for the considered interconnects. We have also developed the model of the inter-wall interaction inside MW CNTs, which demonstrates possible `radial current' losses. CNT- and GNR- Metal interconnects in FET-type nanodevices provide nanosensoring possibilities for local physical (mechanical), chemical and biochemical influences of external medium. At the same time, due to high concentrations of dangling bonds CNT- and GNR- Metal interconnects as interfaces are also considered as electrically, magnetically and chemically sensitive elements for novel nanosensor devices.

  5. The Influence of Impurities and Metallic Capping Layers on the Microstructure of Copper Interconnects

    NASA Astrophysics Data System (ADS)

    Rizzolo, Michael

    As copper interconnects have scaled to ever smaller dimensions on semiconductor devices, the microstructure has become increasingly detrimental for performance and reliability. Small grains persist in interconnects despite annealing at high temperatures, leading to higher line resistance and more frequent electromigration-induced failures. Conventionally, it was believed that impurities from the electrodeposition pinned grain growth, but limitations in analytical techniques meant the effect was inferred rather than observed. Recent advances in analytical techniques, however, have enabled this work to quantify impurity content, location, and diffusion in relation to microstructural changes in electroplated copper. Surface segregation of impurities during the initial burst of grain growth was investigated. After no surface segregation was observed, a microfluidic plating cell was constructed to plate multilayer films with regions of intentionally high and low impurity concentrations to determine if grain growth could be pinned by the presence of impurities; it was not. An alternate mechanism for grain boundary pinning based on the texture of the seed layer is proposed, supported by time-resolved transmission electron microscopy and transmission electron backscatter diffraction data. The suggested model posits that the seed in narrow features has no preferred orientation, which results in rapid nucleation of subsurface grains in trench regions prior to recrystallization from the overburden down. These rapidly growing grains are able to block off several trenches from the larger overburden grains, inhibiting grain growth in narrow features. With this knowledge in hand, metallic capping layers were employed to address the problematic microstructure in 70nm lines. The capping layers (chromium, nickel, zinc, and tin) were plated on the copper overburden prior to annealing to manipulate the stress gradient and microstructural development during annealing. It appeared that

  6. Capturing buried defects in metal interconnections with electron beam inspection system

    NASA Astrophysics Data System (ADS)

    Xiao, Hong; Jiang, Ximan; Trease, David; Van Riet, Mike; Ramprasad, Shishir; Bhatia, Anadi; Lefebvre, Pierre; Bastard, David; Moreau, Olivier; Maher, Chris; MacDonald, Paul; Campochiaro, Cecelia

    2013-04-01

    In this paper we present a novel mode of electron beam inspection (EBI), entitled super wide optics (SWO) mode, which can effectively detect buried defects in tungsten (W) plugs and copper (Cu) wires. These defects are defects of interest (DOI) to integrated circuit (IC) manufacturers because they are not detectable in optical inspection, voltage contrast (VC) mode EBI or physical mode EBI. We used engineering systems to study two samples, a tungsten chemical mechanical polish (CMP) wafer and a copper CMP wafer with a silicon carbon nitride (SiCN) cap layer. EBI with our novel SWO mode was found to capture many dark defects on these two wafers. Furthermore, defect review with all three EBI modes found some of these dark defects were unique to SWO mode. For verification, physical failure analysis was performed on some SWO-unique DOI. The cross-sectional scanning electron microscope (SEM) images and transmission electron microscope (TEM) images confirmed that the unique DOI were buried voids in W-plugs and copper wire thinning caused by either buried particles or buried particle induced metal trench under-etch. These DOI can significantly increase the resistance of metal interconnects of IC chip and affect the chip yield. This new EBI mode can provide an in-line monitoring solution for these DOI, which does not exist before this study.

  7. Electrically Conductive, Corrosion-Resistant Coatings Through Defect Chemistry for Metallic Interconnects

    SciTech Connect

    Anil V. Virkar

    2006-12-31

    The principal objective of this work was to develop oxidation protective coatings for metallic interconnect based on a defect chemistry approach. It was reasoned that the effectiveness of a coating is dictated by oxygen permeation kinetics; the slower the permeation kinetics, the better the protection. All protective coating materials investigated to date are either perovskites or spinels containing metals exhibiting multiple valence states (Co, Fe, Mn, Cr, etc.). As a result, all of these oxides exhibit a reasonable level of electronic conductivity; typically at least about {approx}0.05 S/cm at 800 C. For a 5 micron coating, this equates to a maximum {approx}0.025 {Omega}cm{sup 2} area specific resistance due to the coating. This suggests that the coating should be based on oxygen ion conductivity (the lower the better) and not on electronic conductivity. Measurements of ionic conductivity of prospective coating materials were conducted using Hebb-Wagner method. It was demonstrated that special precautions need to be taken to measure oxygen ion conductivity in these materials with very low oxygen vacancy concentration. A model for oxidation under a protective coating is presented. Defect chemistry based approach was developed such that by suitably doping, oxygen vacancy concentration was suppressed, thus suppressing oxygen ion transport and increasing effectiveness of the coating. For the cathode side, the best coating material identified was LaMnO{sub 3} with Ti dopant on the Mn site (LTM). It was observed that LTM is more than 20 times as effective as Mn-containing spinels. On the anode side, LaCrO3 doped with Nb on the Cr site (LNC) was the material identified. Extensive oxidation kinetics studies were conducted on metallic alloy foils with coating {approx}1 micron in thickness. From these studies, it was projected that a 5 micron coating would be sufficient to ensure 40,000 h life.

  8. A multi-level code for metallurgical effects in metal-forming processes

    SciTech Connect

    Taylor, P.A.; Silling, S.A.; Hughes, D.A.; Bammann, D.J.; Chiesa, M.L.

    1997-08-01

    The authors present the final report on a Laboratory-Directed Research and Development (LDRD) project, A Multi-level Code for Metallurgical Effects in metal-Forming Processes, performed during the fiscal years 1995 and 1996. The project focused on the development of new modeling capabilities for simulating forging and extrusion processes that typically display phenomenology occurring on two different length scales. In support of model fitting and code validation, ring compression and extrusion experiments were performed on 304L stainless steel, a material of interest in DOE nuclear weapons applications.

  9. Degradation of solid oxide fuel cell metallic interconnects in fuels containing sulfur

    SciTech Connect

    Ziomek-Moroz, M.; Hawk, Jeffrey A.

    2005-01-01

    Hydrogen is the main fuel for all types of fuel cells except direct methanol fuel cells. Hydrogen can be generated from all manner of fossil fuels, including coal, natural gas, diesel, gasoline, other hydrocarbons, and oxygenates (e.g., methanol, ethanol, butanol, etc.). Impurities in the fuel can cause significant performance problems and sulfur, in particular, can decrease the cell performance of fuel cells, including solid oxide fuel cells (SOFC). In the SOFC, the high (800-1000°C) operating temperature yields advantages (e.g., internal fuel reforming) and disadvantages (e.g., material selection and degradation problems). Significant progress in reducing the operating temperature of the SOFC from ~1000 ºC to ~750 ºC may allow less expensive metallic materials to be used for interconnects and as balance of plant (BOP) materials. This paper provides insight on the material performance of nickel, ferritic steels, and nickel-based alloys in fuels containing sulfur, primarily in the form of H2S, and seeks to quantify the extent of possible degradation due to sulfur in the gas stream.

  10. Chip-package nano-structured copper and nickel interconnections with metallic and polymeric bonding interfaces

    NASA Astrophysics Data System (ADS)

    Aggarwal, Ankur

    With the semiconductor industry racing toward a historic transition, nano chips with less than 45 nm features demand I/Os in excess of 20,000 that support computing speed in terabits per second, with multi-core processors aggregately providing highest bandwidth at lowest power. On the other hand, emerging mixed signal systems are driving the need for 3D packaging with embedded active components and ultra-short interconnections. Decreasing I/O pitch together with low cost, high electrical performance and high reliability are the key technological challenges identified by the 2005 International Technology Roadmap for Semiconductors (ITRS). Being able to provide several fold increase in the chip-to-package vertical interconnect density is essential for garnering the true benefits of nanotechnology that will utilize nano-scale devices. Electrical interconnections are multi-functional materials that must also be able to withstand complex, sustained and cyclic thermo-mechanical loads. In addition, the materials must be environmentally-friendly, corrosion resistant, thermally stable over a long time, and resistant to electro-migration. A major challenge is also to develop economic processes that can be integrated into back end of the wafer foundry, i.e. with wafer level packaging. Device-to-system board interconnections are typically accomplished today with either wire bonding or solders. Both of these are incremental and run into either electrical or mechanical barriers as they are extended to higher density of interconnections. Downscaling traditional solder bump interconnect will not satisfy the thermo-mechanical reliability requirements at very fine pitches of the order of 30 microns and less. Alternate interconnection approaches such as compliant interconnects typically require lengthy connections and are therefore limited in terms of electrical properties, although expected to meet the mechanical requirements. A novel chip-package interconnection technology is

  11. Metal-sulfide melt non-interconnectivity in silicates, even at high pressure, high temperature, and high melt fractions

    SciTech Connect

    Minarik, W.G.; Ryerson, F.J.

    1996-01-01

    The authors have investigated the textural microstructure of iron-nickel-sulfur melts in contact with olivine, pyroxene, and the modified-spinel polymorph of olivine. The experiments were conducted at 1,500 C and pressures ranging from 1 to 17 GPa. For compositions more metal-rich than the monosulfide, including the eutectic composition, the metal sulfide melt has a dihedral angle greater than 60{degree} and does not form an interconnected grain-edge fluid. Increasing pressure does not measurably alter the dihedral angles. Textural evolution results in coarsening of the sulfide melt pockets, resulting in large pockets surrounded by many silicate grains and separated from one another by melt-free grain edges. Chemical communication between these large pockets is limited to lattice and grain-boundary diffusion. Due to the large interfacial energy between sulfide melt and silicates, sulfide melts are unable to separate from solid silicate via grain-boundary percolation and remain stranded in isolated melt pockets. Sulfide melt in excess of the critical melt fraction (5--25%) will develop a transient interconnectivity as sulfide collects into larger melt pockets and interconnectivity is pinched off. Efficient separation of core-forming sulfide melts from silicate requires either melting of the silicate matrix or a very large fraction of metal-sulfide melt (perhaps as large as 40%).

  12. Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation.

    PubMed

    Feng, Jun; Gong, Xian; Lou, Xiabing; Gordon, Roy G

    2017-03-29

    In advanced microelectronics, precise design of liner and capping layers become critical, especially when it comes to the fabrication of Cu interconnects with dimensions lower than its mean free path. Herein, we demonstrate that direct-liquid-evaporation chemical vapor deposition (DLE-CVD) of Co is a promising method to make liner and capping layers for nanoscale Cu interconnects. DLE-CVD makes pure, smooth, nanocrystalline, and highly conformal Co films with highly controllable growth characteristics. This process allows full Co encapsulation of nanoscale Cu interconnects, thus stabilizing Cu against diffusion and electromigration. Electrical measurements and high-resolution elemental imaging studies show that the DLE-CVD Co encapsulation layer can improve the reliability and thermal stability of Cu interconnects. Also, with the high conductivity of Co, the DLE-CVD Co encapsulation layer have the potential to further decrease the power consumption of nanoscale Cu interconnects, paving the way for Cu interconnects with higher efficiency in future high-end microelectronics.

  13. CoxFe1-x oxide coatings on metallic interconnects for solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Shen, Fengyu; Lu, Kathy

    2016-10-01

    In order to improve the performance of Cr-containing steel as an interconnect material for solid oxide fuel cells, CoFe alloy coatings with Co:Fe ratios of 9:1, 8:2, 7:3, 6:4, and 5:5 are deposited by electrodeposition and then oxidized to CoxFe1-x oxide coatings with a thickness of ∼6 μm as protective layers on the interconnect. The area specific resistance of the coated interconnect increases with the Fe content. Higher Co content oxide coatings are more effective in limiting the growth of the chromia scale while all coatings are effective in inhibiting Cr diffusion and evaporation. With the Co0.8Fe0.2 oxide coated interconnect, the electrochemical performance of the Sm0.5Sr0.5Co0.2Fe0.8O3 cathode is improved. Only 1.54 atomic percentage of Cr is detected on the surface of the Sm0.5Sr0.5Co0.2Fe0.8O3 cathode while no Cr is detected 0.66 μm or more into the cathode. CoxFe1-x oxide coatings are promising candidates for solid oxide fuel cell interconnects with the advantage of using existing cathode species for compatibility and performance enhancement.

  14. Oxidation behavior of metallic interconnect in solid oxide fuel cell stack

    NASA Astrophysics Data System (ADS)

    Li, Jun; Zhang, Wenying; Yang, Jiajun; Yan, Dong; Pu, Jian; Chi, Bo; Jian, Li

    2017-06-01

    Oxidation behavior of integrated interconnect with bipolar plate and corrugated sheet made by ferrite steel SUS430 is investigated and compared in simulated environment and in a realistic stack. Electrical current is found to have a direction-related impact on the thickness of the Cr2O3/MnCr2O4 composite oxide scale. Oxide scale of the interconnect aged in the stack exhibits a dual-layered structure of a complex Mn-Cr oxide layer covered by iron oxide. The oxidation rates vary greatly depending on its local environment, with different thermal, electrical density, as well as gas composition conditions. By analyzing the thickness distribution of oxide scale and comparing them with the simulated test result, the oxidation behavior of interconnect in stack is described in high definition. ASR distribution is also conducted by calculation, which could help further understanding the behavior of stack degradation.

  15. Fuel cell system with interconnect

    DOEpatents

    Liu, Zhien; Goettler, Richard; Delaforce, Philip Mark

    2016-03-08

    The present invention includes a fuel cell system having an interconnect that reduces or eliminates diffusion (leakage) of fuel and oxidant by providing an increased densification, by forming the interconnect as a ceramic/metal composite.

  16. Electromigration of damascene copper of IC interconnect

    NASA Astrophysics Data System (ADS)

    Meyer, William Kevin

    Copper metallization patterned with multi-level damascene process is prone to electromigration failure, which affects the reliability and performance of IC interconnect. In typical products, interconnect that is not already constrained by I·R drop or Joule self-heating operates at 'near threshold' conditions. Measurement of electromigration damage near threshold is very difficult due to slow degradation requiring greatly extended stress times, or high currents that cause thermal anomalies. Software simulations of the electromigration mechanism combined with characterization of temperature profiles allows extracting material parameters and calculation of design rules to ensure reliable interconnect. Test structures capable of demonstrating Blech threshold effects while allowing thermal characterization were designed and processed. Electromigration stress tests at various conditions were performed to extract both shortline (threshold) and long-line (above threshold) performance values. The resistance increase time constant shows immortality below Je·L (product of current density and segment length) of 3200 amp/cm. Statistical analysis of times-to-failure show that long lines last 105 hours at 3.1 mA/mum2 (120°C). While this is more robust than aluminum interconnect, the semiconductor industry will be challenged to improve that performance as future products require.

  17. A low-Cr metallic interconnect for intermediate-temperature solid oxide fuel cells

    SciTech Connect

    Geng, Shujiang; Zhu, Jiahong; Brady, Michael P; Anderson, Harlan; ZHOU, XIADONG; YANG, ZHENGUO

    2007-01-01

    Solid oxide fuel cells (SOFCs) have attracted significant attention due to the potential for environmentally-friendly power generation with high efficiency, fuel flexibility, and zero/no emissions. However, the main hurdles thwarting the commercial introduction of SOFCs are the stack cost and durability, particularly related to the long-term stability of stack/cell materials such as the interconnect 1-3. There has been recent interest in utilizing the Cr2O3-forming alloys as interconnect for intermediate-temperature SOFCs4-6. As a consequence, volatile Cr species from the Cr2O3 scale can cause severe degradation of electrical and catalytic properties of the cathode7-9. Here, we report a new low-Cr Fe-Co-Ni base alloy that demonstrates a close match in coefficient of thermal expansion (CTE) with adjacent cell components; good oxidation resistance; and low oxide scale area specific resistance (ASR). The formation of a Cr-free (Fe,Co,Ni)3O4 spinel outer layer over the chromia inner layer upon thermal exposure effectively reduces the chromium evaporation.

  18. Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

    NASA Technical Reports Server (NTRS)

    Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

    2015-01-01

    Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype IC's with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3- and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient. Improved reproducibility remains to be accomplished.

  19. Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

    NASA Technical Reports Server (NTRS)

    Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

    2015-01-01

    Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype ICs with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3-and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient.

  20. Effect of Metal Coverage on the Performance of 0.6-eV InGaAs Monolithic Interconnected Modules

    NASA Astrophysics Data System (ADS)

    Murray, Susan L.; Murray, Christopher S.; Stan, Mark A.; Newman, Frederick D.; Hills, Jenifer; Siergiej, Richard; Wernsman, Bernard

    2003-01-01

    With the device performance of 0.6eV InGaAs monolithic interconnected modules (MIMs) reaching open circuit voltages of 400 mV/junction and achieving excellent quantum efficiency, the next step to improve performance focuses on controlling the parasitic optical absorption in these MIMs. With an integrated spectral control approach, the design of grid finger and interconnect metallization affects both the output power and the optical absorption of the MIM. The effect of metal coverage on the optical and electrical performance of MIMs processed in a multi-wafer environment is presented.

  1. EFFECT OF METALLIC INTERCONNECT THICKNESS ON ITS LONG-TERM PERFORMANCE IN SOFCS

    SciTech Connect

    Liu, Wenning N.; Sun, Xin; Stephens, Elizabeth V.; Khaleel, Mohammad A.

    2011-11-01

    At the operating environment of solid oxide fuel cells (SOFCs), oxide scale will grow on the ferritic interconnect (IC) surface unavoidably and furfures induce growth stress in oxide scale and along the interface of the oxide scale and IC substrate. A combination of growth stress with thermal stresses may lead to scale delamination/buckling and eventual spallation during SOFC stack cooling, even leading to serious degradation of cell performance. In this paper, the effect of the ferritic IC thickness on the delamination/spallation of the oxide scale was investigated numerically. The predicted results show that the interfacial shear stresses increase with the growth of the oxide scale and also with the thickness of the ferritic substrate; i.e., the thick ferritic substrate can easily lead to scale delamination and spallation.

  2. Interconnection Guidelines

    EPA Pesticide Factsheets

    The Interconnection Guidelines provide general guidance on the steps involved with connecting biogas recovery systems to the utility electrical power grid. Interconnection best practices including time and cost estimates are discussed.

  3. In situ X-ray spectromicroscopy investigation of the material stability of SOFC metal interconnects in operating electrochemical cells.

    PubMed

    Bozzini, Benedetto; Tondo, Elisabetta; Prasciolu, Mauro; Amati, Matteo; Abyaneh, Majid Kazemian; Gregoratti, Luca; Kiskinova, Maya

    2011-08-22

    The present in situ study of electrochemically induced processes occurring in Cr/Ni bilayers in contact with a YSZ electrolyte aims at a molecular-level understanding of the fundamental aspects related to the durability of metallic interconnects in solid oxide fuel cells (SOFCs). The results demonstrate the potential of scanning photoelectron microspectroscopy and imaging to follow in situ the evolution of the chemical states and lateral distributions of the constituent elements (Ni, Cr, Zr, and Y) as a function of applied cathodic potential in a cell working at 650 °C in 10(-6) mbar O(2) ambient conditions. The most interesting findings are the temperature-induced and potential-dependent diffusion of Ni and Cr, and the oxidation-reduction processes resulting in specific morphology-composition changes in the Ni, Cr, and YSZ areas.

  4. Light-triggered self-construction of supramolecular organic nanowires as metallic interconnects

    NASA Astrophysics Data System (ADS)

    Faramarzi, Vina; Niess, Frédéric; Moulin, Emilie; Maaloum, Mounir; Dayen, Jean-François; Beaufrand, Jean-Baptiste; Zanettini, Silvia; Doudin, Bernard; Giuseppone, Nicolas

    2012-06-01

    The construction of soft and processable organic material able to display metallic conduction properties—a large density of freely moving charges—is a major challenge for electronics. Films of doped conjugated polymers are widely used as semiconductor devices, but metallic-type transport in the bulk of such materials remains extremely rare. On the other hand, single-walled carbon nanotubes can exhibit remarkably low contact resistances with related large currents, but are intrinsically very difficult to isolate and process. Here, we describe the self-assembly of supramolecular organic nanowires between two metallic electrodes, from a solution of triarylamine derivative, under the simultaneous action of light and electric field triggers. They exhibit a combination of large conductivity values (>5 × 103 S m-1) and a low interface resistance (<2 × 10-4 Ω m). Moreover, the resistance of nanowires in series with metal interfaces systematically decreases when the temperature is lowered to 1.5 K, revealing an intrinsic metallic behaviour.

  5. Light-triggered self-construction of supramolecular organic nanowires as metallic interconnects.

    PubMed

    Faramarzi, Vina; Niess, Frédéric; Moulin, Emilie; Maaloum, Mounir; Dayen, Jean-François; Beaufrand, Jean-Baptiste; Zanettini, Silvia; Doudin, Bernard; Giuseppone, Nicolas

    2012-04-22

    The construction of soft and processable organic material able to display metallic conduction properties-a large density of freely moving charges-is a major challenge for electronics. Films of doped conjugated polymers are widely used as semiconductor devices, but metallic-type transport in the bulk of such materials remains extremely rare. On the other hand, single-walled carbon nanotubes can exhibit remarkably low contact resistances with related large currents, but are intrinsically very difficult to isolate and process. Here, we describe the self-assembly of supramolecular organic nanowires between two metallic electrodes, from a solution of triarylamine derivative, under the simultaneous action of light and electric field triggers. They exhibit a combination of large conductivity values (>5 × 10(3) S m(-1)) and a low interface resistance (<2 × 10(-4) Ω m). Moreover, the resistance of nanowires in series with metal interfaces systematically decreases when the temperature is lowered to 1.5 K, revealing an intrinsic metallic behaviour.

  6. High Performance Ceramic Interconnect Material for Solid Oxide Fuel Cells (SOFCs): Ca- and Transition Metal-doped Yttrium Chromite

    SciTech Connect

    Yoon, Kyung J.; Stevenson, Jeffry W.; Marina, Olga A.

    2011-10-15

    The effect of transition metal substitution on thermal and electrical properties of Ca-doped yttrium chromite was investigated in relation to use as a ceramic interconnect in high temperature solid oxide fuel cells (SOFCs). 10 at% Co, 4 at% Ni, and 1 at% Cu substitution on B-site of 20 at% Ca-doped yttrium chromite led to a close match of thermal expansion coefficient (TEC) with that of 8 mol% yttria-stabilized zirconia (YSZ), and a single phase Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 remained stable between 25 and 1100 degree C over a wide oxygen partial pressure range. Doping with Cu significantly facilitated densification of yttrium chromite. Ni dopant improved both electrical conductivity and dimensional stability in reducing environments, likely through diminishing the oxygen vacancy formation. Substitution with Co substantially enhanced electrical conductivity in oxidizing atmosphere, which was attributed to an increase in charge carrier density and hopping mobility. Electrical conductivity of Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 at 900 degree C is 57 S/cm in air and 11 S/cm in fuel (pO2=5×10^-17 atm) environments. Chemical compatibility of doped yttrium chromite with other cell components was verified at the processing temperatures. Based on the chemical and dimensional stability, sinterability, and thermal and electrical properties, Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 is suggested as a promising SOFC ceramic interconnect to potentially overcome technical limitations of conventional acceptor-doped lanthanum chromites.

  7. Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization

    NASA Astrophysics Data System (ADS)

    Oh, Seung Kyu; Jang, Taehoon; Pouladi, Sara; Jo, Young Je; Ko, Hwa-Young; Ryou, Jae-Hyun; Kwak, Joon Seop

    2017-01-01

    To improve wafer utilization efficiency and heat dissipation performance, this paper proposes multilevel metallization-structured, lateral-type AlGaN/GaN heterostructure field-effect transistors (HFETs) on a 150 mm Si substrate using photosensitive polyimide (PSPI) as the intermetal dielectric layer. The maximum drain current of the HFETs is 46.3 A, which is 240% higher than that of conventional AlGaN/GaN HFETs with the same die size. Furthermore, the drain current drop of the HFETs under high-bias operation is reduced from 14.07 to 8.09%, as compared to that of conventional HFETs.

  8. Selective Ru ALD as a Catalyst for Sub-Seven-Nanometer Bottom-Up Metal Interconnects.

    PubMed

    Zyulkov, Ivan; Krishtab, Mikhail; De Gendt, Stefan; Armini, Silvia

    2017-09-13

    Integrating bottom-up area-selective building-blocks in microelectronics has a disruptive potential because of the unique capability of engineering new structures and architectures. Atomic layer deposition (ALD) is an enabling technology, yet understanding the surfaces and their modification is crucial to leverage area-selective ALD (AS-ALD) in this field. The understanding of general selectivity mechanisms and the compatibility of plasma surface modifications with existing materials and processes, both at research and production scale, will greatly facilitate AS-ALD integration in microelectronics. The use of self-assembled monolayers to inhibit the nucleation and growth of ALD films is still scarcely compatible with nanofabrication because of defectivity and downscaling limitations. Alternatively, in this Research Article, we demonstrate a straightforward H2 plasma surface modification process capable of inhibiting Ru ALD nucleation on an amorphous carbon surface while still allowing instantaneous nucleation and linear growth on Si-containing materials. Furthermore, we demonstrate how AS-ALD enables previously inaccessible routes, such as bottom-up electroless metal deposition in a dual damascene etch-damage free low-k replacement scheme. Specifically, our approach offers a general strategy for scalable ultrafine 3D nanostructures without the burden of subtractive metal patterning and high cost chemical mechanical planarization processes.

  9. The effect of metal-contacts on carbon nanotube for high frequency interconnects and devices

    SciTech Connect

    Chimowa, George; Bhattacharyya, Somnath

    2014-08-15

    High frequency characterisation of platinum and tungsten contacts on individual multi-walled carbon nanotubes (MWNT) is performed from 10 MHz to 50 GHz. By measuring the scattering parameters of aligned individual MWNTs, we show that metal contacts enhance an inductive response due to the improved MWNT-electrode coupling reducing the capacitive effect. This behaviour is pronounced in the frequency below 10 GHz and strong for tungsten contacts. We explain the inductive response as a result of the interaction of stimulus current with the localized (or defects) states present at the contact region resulting in the current lagging behind the voltage. The results are further supported by direct current measurements that show tungsten to significantly increase carbon nanotube-electrode coupling. The immediate consequence is the reduction of the contact resistance, implying a reduction of electron tunnelling barrier from the electrode to the carbon nanotube.

  10. Electrically Robust Metal Nanowire Network Formation by In-Situ Interconnection with Single-Walled Carbon Nanotubes

    PubMed Central

    Woo, Jong Seok; Han, Joong Tark; Jung, Sunshin; Jang, Jeong In; Kim, Ho Young; Jeong, Hee Jin; Jeong, Seung Yol; Baeg, Kang-Jun; Lee, Geon-Woong

    2014-01-01

    Modulation of the junction resistance between metallic nanowires is a crucial factor for high performance of the network-structured conducting film. Here, we show that under current flow, silver nanowire (AgNW) network films can be stabilised by minimizing the Joule heating at the NW-NW junction assisted by in-situ interconnection with a small amount (less than 3 wt%) of single-walled carbon nanotubes (SWCNTs). This was achieved by direct deposition of AgNW suspension containing SWCNTs functionalised with quadruple hydrogen bonding moieties excluding dispersant molecules. The electrical stabilisation mechanism of AgNW networks involves the modulation of the electrical transportation pathway by the SWCNTs through the SWCNT-AgNW junctions, which results in a relatively lower junction resistance than the NW-NW junction in the network film. In addition, we propose that good contact and Fermi level matching between AgNWs and modified SWCNTs lead to the modulation of the current pathway. The SWCNT-induced stabilisation of the AgNW networks was also demonstrated by irradiating the film with microwaves. The development of the high-throughput fabrication technology provides a robust and scalable strategy for realizing high-performance flexible transparent conductor films. PMID:24763208

  11. Model-based prediction of the ohmic resistance of metallic interconnects from oxide scale growth based on scanning electron microscopy

    NASA Astrophysics Data System (ADS)

    Linder, Markus; Hocker, Thomas; Holzer, Lorenz; Friedrich, K. Andreas; Iwanschitz, Boris; Mai, Andreas; Schuler, J. Andreas

    2014-12-01

    The increase of ohmic losses caused by continuously growing Cr2O3 scales on metallic interconnects (MICs) is a major contribution to the degradation of SOFC stacks. Comparison of measured ohmic resistances of chromium- (CFY) and ferritic-based alloy (Crofer) MICs at 850 °C in air with the growth of mean oxide scale thicknesses, obtained from SEM cross section images, reveals a non-trivial, non-linear relationship. To understand the correlation between scale evolution and resulting ohmic losses, 2D finite element (FE) simulations of electrical current distributions have been performed for a large number of real oxide scale morphologies. It turns out that typical morphologies favor nonhomogeneous electrical current distributions, where the main current flows over rather few "bridges", i.e. local spots with relatively thin oxide scales. These current-"bridges" are the main reason for the non-linear dependence of ohmic losses on the corresponding oxide scale morphology. Combining electrical conductivity and SEM measurements with FE simulations revealed two further advantages: it permits a more reliable extrapolation of MIC-degradation data over the whole stack lifetime and it provides a method to assess the effective electrical conductivity of thermally grown Cr2O3 scales under stack operation.

  12. Rapid Fabrication of Graphene Field-Effect Transistors with Liquid-metal Interconnects and Electrolytic Gate Dielectric Made of Honey.

    PubMed

    Ordonez, Richard C; Hayashi, Cody K; Torres, Carlos M; Melcher, Jordan L; Kamin, Nackieb; Severa, Godwin; Garmire, David

    2017-08-31

    Historically, graphene-based transistor fabrication has been time-consuming due to the high demand for carefully controlled Raman spectroscopy, physical vapor deposition, and lift-off processes. For the first time in a three-terminal graphene field-effect transistor embodiment, we introduce a rapid fabrication technique that implements non-toxic eutectic liquid-metal Galinstan interconnects and an electrolytic gate dielectric comprised of honey. The goal is to minimize cost and turnaround time between fabrication runs; thereby, allowing researchers to focus on the characterization of graphene phenomena that drives innovation rather than a lengthy device fabrication process that hinders it. We demonstrate characteristic Dirac peaks for a single-gate graphene field-effect transistor embodiment that exhibits hole and electron mobilities of 213 ± 15 and 166 ± 5 cm (2)/V·s respectively. We discuss how our methods can be used for the rapid determination of graphene quality and can complement Raman Spectroscopy techniques. Lastly, we explore a PN junction embodiment which further validates that our fabrication techniques can rapidly adapt to alternative device architectures and greatly broaden the research applicability.

  13. Plasmonics-enabled metal-semiconductor-metal photodiodes for high-speed interconnects and polarization sensitive detectors

    NASA Astrophysics Data System (ADS)

    Panchenko, Evgeniy; Cadusch, Jasper J.; James, Timothy D.; Roberts, Ann

    2017-02-01

    Metal-semiconductor-metal (MSM) photodiodes are commonly used in ultrafast photoelectronic devices. Recently it was shown that localized surface plasmons can sufficiently enhance photodetector capabilities at both infrared and visible wavelengths. Such structures are of great interest since they can be used for fast, broadband detection. By utilizing the properties of plasmonic structures it is possible to design photodetectors that are sensitive to the polarization state of the incident wave. The direct electrical readout of the polarization state of an incident optical beam has many important applications, especially in telecommunications, bio-imaging and photonic computing. Furthermore, the fact that surface plasmon polaritons can circumvent the diffraction limit, opens up significant opportunities to use them to guide signals between logic gates in modern integrated circuits where small dimensions are highly desirable. Here we demonstrate two MSM photodetectors integrated with aluminum nanoantennas capable of distinguishing orthogonal states of either linearly or circularly polarized light with no additional filters. The localized plasmon resonances of the antennas lead to selective screening of the underlying silicon from light with a particular polarization state. The non-null response of the devices to each of the basis states expands the potential utility of the photodetectors while improving precision. We also demonstrate a design of waveguide-coupled MSM photodetector suitable for planar detection of surface plasmons.

  14. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-01

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  15. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  16. Coplanar interconnection module

    NASA Technical Reports Server (NTRS)

    Steward, R. D.; Windsor, H. F.

    1970-01-01

    Module for interconnecting a semiconductor array to external leads or components incorporates a metal external heat sink for cooling the array. Heat sink, extending down from the molded block that supports the array, is immersed in a liquid nitrogen bath which is designed to maintain the desired array temperature.

  17. Optical Interconnections For WSI

    NASA Astrophysics Data System (ADS)

    Friedrich, E.; Valette, S.; Gidon, P.

    1989-02-01

    Optical interconnections may be an alternative to metallic lines in very large and fast circuits. In this field, integrated optics could be very attractive because the basic approach is similar to the one of microelectronics. From this point of view, the silicon based integrated optics technology developed at LETI is described and expected performances are analysed.

  18. SOFC INTERCONNECT DEVELOPMENT

    SciTech Connect

    Diane M. England

    2004-03-16

    An interconnect for an SOFC stack is used to connect fuel cells into a stack. SOFC stacks are expected to run for 40,000 hours and 10 thermal cycles for the stationary application and 10,000 hours and 7000 thermal cycles for the transportation application. The interconnect of a stack must be economical and robust enough to survive the SOFC stack operation temperature of 750 C and must maintain the electrical connection to the fuel cells throughout the lifetime and under thermal cycling conditions. Ferritic and austenitic stainless steels, and nickel-based superalloys were investigated as possible interconnect materials for solid oxide fuel cell (SOFC) stacks. The alloys were thermally cycled in air and in a wet nitrogen-argon-hydrogen (N2-Ar-H2-H2O) atmosphere. Thermogravimetry was used to determine the parabolic oxidation rate constants of the alloys in both atmospheres. The area-specific resistance of the oxide scale and metal substrates were measured using a two-probe technique with platinum contacts. The study identifies two new interconnect designs which can be used with both bonded and compressive stack sealing mechanisms. The new interconnect designs offer a solution to chromium vaporization, which can lead to degradation of some (chromium-sensitive) SOFC cathodes.

  19. Patterning gold nanoparticles in liquid environment with high ionic strength for local fabrication of up to 100 μm long metallic interconnections.

    PubMed

    Grüter, Robert R; Dielacher, Bernd; Hirt, Luca; Vörös, János; Zambelli, Tomaso

    2015-05-01

    Metallic interconnections were fabricated in situ using the FluidFM as scanning probe lithography tool. In contrast to other SPL tools, the closed fluidic circuit of the FluidFM enables a pressure-controlled deposition of metallic nanoparticles in liquid environment. Taking advantage of the salt concentration of the liquid environment (i.e. the ionic strength) to tailor the resulting particle density in the deposited layer, a protocol was established for direct patterning of conductive interconnecting structures. The FluidFM microchannel was filled with an aqueous solution of negatively charged gold nanoparticles (AuNPs) to be delivered onto a glass surface coated with a polycation favoring electrostatic adhesion. The deposited structures were analyzed both topographically and electrically to optimize the external parameters such as contact time, salt concentration of the liquid environment and size of the AuNPs. Using this optimized protocol we succeeded in the local fabrication of conductive metallic wires between two prefabricated macroelectrodes in liquid environment. In a subsequent step, the conductivity of the deposited structure was improved by gold annealing.

  20. Optoelectronic Systems Based on InGaAs Complementary-Metal-Oxide-Semiconductor Smart-Pixel Arrays and Free-Space Optical Interconnects

    NASA Astrophysics Data System (ADS)

    Walker, Andrew C.; Yang, Tsung-Yi; Gourlay, James; Dines, Julian A. B.; Forbes, Mark G.; Prince, Simon M.; Baillie, Douglas A.; Neilson, David T.; Williams, Rhys; Wilkinson, Lucy C.; Smith, George R.; Desmulliez, Mark P. Y.; Buller, Gerald S.; Taghizadeh, Mohammad R.; Waddie, Andrew; Underwood, Ian; Stanley, Colin R.; Pottier, Francois; Vgele, Brigitte; Sibbett, Wilson

    1998-05-01

    Free-space optical interconnects have been identified as a potentially important technology for future massively parallel-computing systems. The development of optoelectronic smart pixels based on InGaAs AlGaAs multiple-quantum-well modulators and detectors flip-chip solder-bump bonded onto complementary-metal-oxide-semiconductor (CMOS) circuits and the design and construction of an experimental processor in which the devices are linked by free-space optical interconnects are described. For demonstrating the capabilities of the technology, a parallel data-sorting system has been identified as an effective demonstrator. By use of Batcher s bitonic sorting algorithm and exploitation of a perfect-shuffle optical interconnection, the system has the potential to perform a full sort on 1024, 16-bit words in less than 16 s. We describe the design, testing, and characterization of the smart-pixel devices and free-space optical components. InGaAs CMOS smart-pixel, chip-to-chip communication has been demonstrated at 50 Mbits s. It is shown that the initial system specifications can be met by the component technologies.

  1. Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated With Two Levels of Metal Interconnect

    NASA Technical Reports Server (NTRS)

    Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Evans, Laura J.; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.

    2015-01-01

    The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 3000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

  2. Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

    NASA Technical Reports Server (NTRS)

    Spry, David J.; Neudeck, Philip G.; Liangyu, Chen; Evans, Laura J.; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.

    2015-01-01

    The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 1000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

  3. Interconnection and electromigration scaling theory

    NASA Astrophysics Data System (ADS)

    Gardner, Donald S.; Meindl, James D.; Saraswat, Krishna

    1986-12-01

    Interconnections will become the limit in performance and reliability at submicron dimensions. Long-distance interconnections are defined by models based on resistivity, and it is found that more than half of the interconnections will become categorized as such at 0.5 micrometers feature sizes. The resistivity of even less resistive materials, therefore, will become important. A model for analyzing the trends of material usage for interconnections and for projecting design rules is presented. Electromigration is the driving force away from the lowest resistivity silicon compatible material, namely aluminum. Replacements such as gold, however, have technological problems and the resistivity of refractory metals will be too high for a large fraction of the interconnections. Layered structures are one possible solution to the problems of electromigration.

  4. Interconnect resistance of photovoltaic submodules

    NASA Technical Reports Server (NTRS)

    Volltrauer, H.; Eser, E.; Delahoy, A. E.

    1985-01-01

    Small area amorphous silicon solar cells generally have higher efficiencies than large interconnected submodules. Among the reasons for the differences in performance are the lack of large area uniformity, the effect of nonzero tin oxide sheet resistance, and possibly pinholes in the various layers. Another and usually small effect that can contribute to reduced performance of interconnected cells is the resistance of the interconnection i.e., the series resistance introduced by the metal to tin oxide contact through silicon. Proper processing problems to avoid poor contacts are discussed.

  5. Electrical interconnect

    SciTech Connect

    Frost, John S.; Brandt, Randolph J.; Hebert, Peter; Al Taher, Omar

    2015-10-06

    An interconnect includes a first set of connector pads, a second set of connector pads, and a continuous central portion. A first plurality of legs extends at a first angle from the continuous central portion. Each leg of the first plurality of legs is connected to a connector pad of a first set of connector pads. A second plurality of legs extends at a second angle from the continuous central portion. Each leg of the second plurality of legs is connected to a connector pad of the second set of connector pads. Gaps are defined between legs. The gaps enable movement of the first set of connector pads relative to the second set of connector pads.

  6. Alloy Films Deposited by Electroplating as Precursors for Protective Oxide Coatings on Solid Oxide Fuel Cells Metallic Interconnect Materials

    SciTech Connect

    Johnson, Christopher; Gemmen, R.S.; Cross, Caleb

    2006-10-01

    The successful development of stainless steel interconnects for intermediate temperature solid oxide fuel cells (SOFC) may be the materials breakthrough that makes SOFC technology truly commercial. Many of the ferritic stainless steels, however, suffer from a relatively high area specific resistance (ASR) after long exposure times at temperature and the Cr in the native oxide can evaporate and contaminate other cell components. Conductive coatings that resist oxide scale growth and chromium evaporation may prevent both of these problems. In the present study electrochemical deposition of binary alloys followed by oxidation of the alloy to form protective and conductive oxide layers is examined. Results are presented for the deposition of Mn/Co and Fe/Ni alloys via electroplating to form a precursor for spinel oxide coating formation. Analysis of the alloy coatings is done by SEM, EDS and XRD.

  7. Modeling interconnect corners under double patterning misalignment

    NASA Astrophysics Data System (ADS)

    Hyun, Daijoon; Shin, Youngsoo

    2016-03-01

    Publisher's Note: This paper, originally published on March 16th, was replaced with a corrected/revised version on March 28th. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance. Interconnect corners should accurately reflect the effect of misalingment in LELE double patterning process. Misalignment is usually considered separately from interconnect structure variations; this incurs too much pessimism and fails to reflect a large increase in total capacitance for asymmetric interconnect structure. We model interconnect corners by taking account of misalignment in conjunction with interconnect structure variations; we also characterize misalignment effect more accurately by handling metal pitch at both sides of a target metal independently. Identifying metal space at both sides of a target metal.

  8. Multilevel Classes.

    ERIC Educational Resources Information Center

    Connections: A Journal of Adult Literacy, 1997

    1997-01-01

    This issue contains 12 articles written by teachers who have investigated various aspects of the multilevel question in their own classrooms. "The Multilevel Question" (Lenore Balliro) provides an introduction. "Deconstructing the Great Wall of Print" (Richard Goldberg) investigates reading strategies that allow students with a wide range of…

  9. Interconnects, Transmitters, and Receivers

    NASA Astrophysics Data System (ADS)

    Hoefflinger, Bernd

    Interconnects on-chip between transistors and between functions like processors and memories, between chips on carriers or in stacks, and the communication with the outside world have become a highly complex performance, reliability, cost, and energy challenge. Twelve layers of metal interconnects, produced by lithography, require, including the contact vias, 24 mask and process cycles on top of the process front-end. The resulting lines are associated with resistance, capacitance and inductance parasitics as well as with ageing due to high current densities. Large savings in wiring lengths are achieved with 3D integration: transistor stacking, chip stacking and TSV's, a direction, which has exploded since 2005 because of many other benefits and, at the same time, with sensitive reliability and cost issues. On top of this or as an alternative, non-contact interconnects are possible with capacitive or inductive coupling. Inductive in particular has proven to be attractive because its transmission range is large enough for communication in chip stacks and yet not too large to cause interference.Optical transmitters based on integrated III-V compound-semiconductor lasers and THz power amplifiers compete with ascending low-cost, parallel-wire transmitters based on BiCMOS technologies. Parallel mm-wave and THz transceiver arrays enable mm-wave radar for traffic safety and THz computed-tomography. In spite of all these technology advances, the power efficiency of data communication will only improve 100× in a decade. New compression and architectural techniques are in high demand.

  10. Advanced Interconnect Development

    SciTech Connect

    Yang, Z.G.; Maupin, G.; Simner, S.; Singh, P.; Stevenson, J.; Xia, G.

    2005-01-27

    The objectives of this project are to develop cost-effective, optimized materials for intermediate temperature SOFC interconnect and interconnect/electrode interface applications and identify and understand degradation processes in interconnects and at their interfaces with electrodes.

  11. Interconnection networks

    DOEpatents

    Faber, V.; Moore, J.W.

    1988-06-20

    A network of interconnected processors is formed from a vertex symmetric graph selected from graphs GAMMA/sub d/(k) with degree d, diameter k, and (d + 1)exclamation/ (d /minus/ k + 1)exclamation processors for each d greater than or equal to k and GAMMA/sub d/(k, /minus/1) with degree d /minus/ 1, diameter k + 1, and (d + 1)exclamation/(d /minus/ k + 1)exclamation processors for each d greater than or equal to k greater than or equal to 4. Each processor has an address formed by one of the permutations from a predetermined sequence of letters chosen a selected number of letters at a time, and an extended address formed by appending to the address the remaining ones of the predetermined sequence of letters. A plurality of transmission channels is provided from each of the processors, where each processor has one less channel than the selected number of letters forming the sequence. Where a network GAMMA/sub d/(k, /minus/1) is provided, no processor has a channel connected to form an edge in a direction delta/sub 1/. Each of the channels has an identification number selected from the sequence of letters and connected from a first processor having a first extended address to a second processor having a second address formed from a second extended address defined by moving to the front of the first extended address the letter found in the position within the first extended address defined by the channel identification number. The second address is then formed by selecting the first elements of the second extended address corresponding to the selected number used to form the address permutations. 9 figs.

  12. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  13. Ultrahigh–current density anodes with interconnected Li metal reservoir through overlithiation of mesoporous AlF3 framework

    PubMed Central

    Wang, Hansen; Lin, Dingchang; Liu, Yayuan; Li, Yuzhang; Cui, Yi

    2017-01-01

    Lithium (Li) metal is the ultimate solution for next-generation high–energy density batteries but is plagued from commercialization by infinite relative volume change, low Coulombic efficiency due to side reactions, and safety issues caused by dendrite growth. These hazardous issues are further aggravated under high current densities needed by the increasing demand for fast charging/discharging. We report a one-step fabricated Li/Al4Li9-LiF nanocomposite (LAFN) through an “overlithiation” process of a mesoporous AlF3 framework, which can simultaneously mitigate the abovementioned problems. Reaction-produced Al4Li9-LiF nanoparticles serve as the ideal skeleton for Li metal infusion, helping to achieve a near-zero volume change during stripping/plating and suppressed dendrite growth. As a result, the LAFN electrode is capable of working properly under an ultrahigh current density of 20 mA cm−2 in symmetric cells and manifests highly improved rate capability with increased Coulombic efficiency in full cells. The simple fabrication process and its remarkable electrochemical performances enable LAFN to be a promising anode candidate for next-generation lithium metal batteries. PMID:28913431

  14. Ultrahigh–current density anodes with interconnected Li metal reservoir through overlithiation of mesoporous AlF3 framework

    DOE PAGES

    Wang, Hansen; Lin, Dingchang; Liu, Yayuan; ...

    2017-09-08

    Lithium (Li) metal is the ultimate solution for next-generation high–energy density batteries but is plagued from commercialization by infinite relative volume change, low Coulombic efficiency due to side reactions, and safety issues caused by dendrite growth. These hazardous issues are further aggravated under high current densities needed by the increasing demand for fast charging/discharging. We report a one-step fabricated Li/Al4Li9-LiF nanocomposite (LAFN) through an “overlithiation” process of a mesoporous AlF3 framework, which can simultaneously mitigate the abovementioned problems. Reaction-produced Al4Li9-LiF nanoparticles serve as the ideal skeleton for Li metal infusion, helping to achieve a near-zero volume change during stripping/plating andmore » suppressed dendrite growth. As a result, the LAFN electrode is capable of working properly under an ultrahigh current density of 20 mA cm–2 in symmetric cells and manifests highly improved rate capability with increased Coulombic efficiency in full cells. Here, the simple fabrication process and its remarkable electrochemical performances enable LAFN to be a promising anode candidate for next-generation lithium metal batteries.« less

  15. Multilevel metal/Pb(Zr0.52Ti0.48)O3/TiOxNy/Si for next generation FeRAM technology node

    NASA Astrophysics Data System (ADS)

    Sharma, Deepak K.; Khosla, Robin; Sharma, Satinder K.

    2015-09-01

    Metal-Ferroelectric-Insulator-Semiconductor (MFIS) thin film capacitors with lead zirconate titanate (Pb(Zr0.52Ti0.48)O3) as ferroelectric layer and ultrathin high-κ titanium oxynitride (TiOxNy) as insulating buffer layer on p-Si are fabricated by RF magnetron sputtering for non-volatile multilevel ferroelectric random access memory (FeRAM). Micro Raman analysis of the proposed systems confirmed the existence of most stable tetragonal rutile phase in ultrathin TiOxNy and perovskite phase of PZT thin films. AFM analysis showed that surface roughness of ultrathin TiOxNy and thin PZT films are ∼2.54 nm and ∼1.85 nm, respectively and result the uniform interface between substrate and metal. The maximum C-V memory window of ∼1.25 V was obtained at cyclic sweep voltage of ±6 V and starts to decrease when the sweep voltage exceeds 6 V due to charge injection. The fabricated structure possesses good data retention measured till 1.5 h and high, low capacitance states remain distinguishable even if extrapolated to 15 years. The proposed system exhibited excellent TiOxNy-Si interface, incomparable high breakdown field strength ∼11.15 MV/cm and low leakage current density (J) ∼5 μA/cm2 at +4 V. Thus, Au/PZT/TiOxNy/Si MFIS based FeRAM devices with multilevel operation, high breakdown field and excellent retention are prospective contender for next generation multilevel FeRAM technology node.

  16. A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

    NASA Technical Reports Server (NTRS)

    Savich, Gregory R.; Simons, Rainee N.

    2006-01-01

    Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

  17. Printed Module Interconnects

    SciTech Connect

    Stockert, Talysa R.; Fields, Jeremy D.; Pach, Gregory F.; Mauger, Scott A.; van Hest, Maikel F. A. M.

    2015-06-14

    Monolithic interconnects in photovoltaic modules connect adjacent cells in series, and are typically formed sequentially involving multiple deposition and scribing steps. Interconnect widths of 500 um every 10 mm result in 5% dead area, which does not contribute to power generation in an interconnected solar panel. This work expands on previous work that introduced an alternative interconnection method capable of producing interconnect widths less than 100 um. The interconnect is added to the module in a single step after deposition of the photovoltaic stack, eliminating the need for scribe alignment. This alternative method can be used for all types of thin film photovoltaic modules. Voltage addition with copper-indium-gallium-diselenide (CIGS) solar cells using a 2-scribe printed interconnect approach is demonstrated. Additionally, interconnect widths of 250 um are shown.

  18. CMOS device and interconnect technology enhancements for low power/low voltage applications

    NASA Astrophysics Data System (ADS)

    Vasudev, P. K.

    1996-04-01

    This paper reviews current advances and future directions in the development of scaled CMOS device technologies on bulk and SOI substrates, and multilevel interconnect architectures for application to low power/low voltage ULSI. Although traditional device scaling (as per the SIA roadmap) calls for the concomitant reduction in device sizes and power supplies driven by DRAM technology generations, the achievement of ultra-low power dissipation (at Vdd ≈ 1 V or less) and high speed performance (for battery operated portable systems) will accelerate scaling and drive several new engineered structures, such as vertically modulated channel doping profiles, ultra-shallow source/drain junctions and ultra-thin SOI devices that are tailored for low voltages. In addition, the development of novel low temperature processing schemes, such as Damascene, will be accelerated for integrating low K dielectrics with Al or Cu metallizations for multilevel interconnect architectures that are designed for low power. The successful incorporation of these technologies into portable electronics systems of the coming decade will require meeting the timing, manufacturability, cost and performance goals, in concert with the SIA roadmap.

  19. Influence of fiber interconnections on the thermomechanical behavior of metal matrix composites consisting of Zn-Al alloy reinforced with steel fibers

    SciTech Connect

    Tao, L.; Delannay, F.

    1998-11-20

    Interconnected fiber networks presenting transverse isotropic symmetry with variable fiber interconnectivity were prepared by sintering assemblies of low carbon steel fibers. The strength and stiffness of these fiber preforms was found to increase very much when increasing sintering temperature or sintering time. Squeeze cast composites were prepared by infiltrating these preforms with alloy ZA8. Creep tests and tensile tests were carried out at 150 C. Both the creep strength and the back-flow strains at unloading drastically increase with increasing preform sintering temperature or time. Also thermal expansion is much affected by fiber interconnectivity. Especially, during cooling, the matrix dilatation strains brought about by thermal mismatches increase with increasing fiber interconnectivity. These results demonstrate that plastic and viscoplastic behaviors of network reinforced composites depend on the mechanical properties of the network as a whole.

  20. Application of selective CVD tungsten for low contact resistance via filling to aluminum multilayer interconnection

    NASA Astrophysics Data System (ADS)

    Rang, S.; Chow, R.; Wilson, R. H.; Gorowitz, B.; Williams, A. G.

    1988-05-01

    Process parameters for selective chemical vapor deposition of tungsten to fill vias between aluminum or aluminum alloy multilevel metallization have been identified and demonstrated. By controlling two competing parallel reactions: Aluminum and hydrogen reductions of tungsten hexafluoride in one reduction step process, the specific contact resistivity was found to be in the range of 2.5 to 8.0 x 10-9 ohm-cm2 for 1.8 micron diameter vias. This is at least one order of magnitude lower than the values reported by the previous workers. It was also observed that alloying the aluminum did not appear to affect the contact resistance significantly. In this experiment one cold wall experimental reactor, two cold wall production systems of two different models and one hot wall tube furnace were used to deposit selective CVD tungsten on aluminum or aluminum with 1% silicon first level metal. As a consequence of these findings, problems associated with filling straight wall vias of high aspect ratio in VLSI multilevel interconnection (i.e., high contact resistance, poor step coverage, electromigration, etc.) can now be alleviated or resolved. Therefore, the use of selective CVD tungsten in the existing aluminum IC metallization becomes very attractive and feasible.

  1. Perforation patterned electrical interconnects

    DOEpatents

    Frey, Jonathan

    2014-01-28

    This disclosure describes systems and methods for increasing the usable surface area of electrical contacts within a device, such as a thin film solid state device, through the implementation of electrically conductive interconnects. Embodiments described herein include the use of a plurality of electrically conductive interconnects that penetrate through a top contact layer, through one or more multiple layers, and into a bottom contact layer. The plurality of conductive interconnects may form horizontal and vertical cross-sectional patterns. The use of lasers to form the plurality of electrically conductive interconnects from reflowed layer material further aids in the manufacturing process of a device.

  2. Alignability of Optical Interconnects

    NASA Astrophysics Data System (ADS)

    Beech, Russell Scott

    With the continuing drive towards higher speed, density, and functionality in electronics, electrical interconnects become inadequate. Due to optics' high speed and bandwidth, freedom from capacitive loading effects, and freedom from crosstalk, optical interconnects can meet more stringent interconnect requirements. But, an optical interconnect requires additional components, such as an optical source and detector, lenses, holographic elements, etc. Fabrication and assembly of an optical interconnect requires precise alignment of these components. The successful development and deployment of optical interconnects depend on how easily the interconnect components can be aligned and/or how tolerant the interconnect is to misalignments. In this thesis, a method of quantitatively specifying the relative difficulty of properly aligning an optical interconnect is described. Ways of using this theory of alignment to obtain design and packaging guidelines for optical interconnects are examined. The measure of the ease with which an optical interconnect can be aligned, called the alignability, uses the efficiency of power transfer as a measure of alignment quality. The alignability is related to interconnect package design through the overall cost measure, which depends upon various physical parameters of the interconnect, such as the cost of the components and the time required for fabrication and alignment. Through a mutual dependence on detector size, the relationship between an interconnect's alignability and its bandwidth, signal-to-noise ratio, and bit-error -rate is examined. The results indicate that a range of device sizes exists for which given performance threshold values are satisfied. Next, the alignability of integrated planar-optic backplanes is analyzed in detail. The resulting data show that the alignability can be optimized by varying the substrate thickness or the angle of reflection. By including the effects of crosstalk, in a multi-channel backplane, the

  3. Immortality of Cu damascene interconnects

    NASA Astrophysics Data System (ADS)

    Hau-Riege, Stefan P.

    2002-04-01

    We have studied short-line effects in fully-integrated Cu damascene interconnects through electromigration experiments on lines of various lengths and embedded in different dielectric materials. We compare these results with results from analogous experiments on subtractively-etched Al-based interconnects. It is known that Al-based interconnects exhibit three different behaviors, depending on the magnitude of the product of current density, j, and line length, L: For small values of (jL), no void nucleation occurs, and the line is immortal. For intermediate values, voids nucleate, but the line does not fail because the current can flow through the higher-resistivity refractory-metal-based shunt layers. Here, the resistance of the line increases but eventually saturates, and the relative resistance increase is proportional to (jL/B), where B is the effective elastic modulus of the metallization system. For large values of (jL/B), voiding leads to an unacceptably high resistance increase, and the line is considered failed. By contrast, we observed only two regimes for Cu-based interconnects: Either the resistance of the line stays constant during the duration of the experiment, and the line is considered immortal, or the line fails due to an abrupt open-circuit failure. The absence of an intermediate regime in which the resistance saturates is due to the absence of a shunt layer that is able to support a large amount of current once voiding occurs. Since voids nucleate much more easily in Cu- than in Al-based interconnects, a small fraction of short Cu lines fails even at low current densities. It is therefore more appropriate to consider the probability of immortality in the case of Cu rather than assuming a sharp boundary between mortality and immortality. The probability of immortality decreases with increasing amount of material depleted from the cathode, which is proportional to (jL2/B) at steady state. By contrast, the immortality of Al-based interconnects is

  4. Ultrafine Pitch Stencil Printing of Liquid Metal Alloys.

    PubMed

    Lazarus, Nathan; Bedair, Sarah S; Kierzewski, Iain M

    2017-01-18

    With high conductivity and stretchable for large cross-sections, liquid metals such as galinstan are promising for creating stretchable devices and interconnects. Creating high resolution features in parallel is challenging, with most techniques limited to a hundred micrometers or more. In this work, multilevel electroplated stencils are investigated for printing liquid metals, with galinstan features as small as ten micrometers printed on soft elastomers, a factor of 10 reduction over past liquid metal stencil printing. Capacitors and resistive strain sensors are also demonstrated, showing the potential for creating stretchable conductors and devices.

  5. A General Strategy to Fabricate Carbon‐Coated 3D Porous Interconnected Metal Sulfides: Case Study of SnS/C Nanocomposite for High‐Performance Lithium and Sodium Ion Batteries

    PubMed Central

    Zhu, Changbao; Kopold, Peter; Li, Weihan; van Aken, Peter A.; Maier, Joachim

    2015-01-01

    Transition metal sulfides have a great potential for energy storage due to the pronouncedly higher capacity (owing to conversion to metal or even alloy) than traditional insertion electrode materials. However, the poor cycling stability still limits the development and application in lithium and sodium ion batteries. Here, taking SnS as a model material, a novel general strategy is proposed to fabricate a 3D porous interconnected metal sulfide/carbon nanocomposite by the electrostatic spray deposition technique without adding any expensive carbonaceous materials such as graphene or carbon nanotube. In this way, small nanorods of SnS are generated with sizes of ≈10–20 nm embedded in amorphous carbon and self‐assembled into a 3D porous interconnected nanocomposite. The SnS:C is directly deposited on the Ti foil as a current collector and neither conductive additives nor binder are needed for battery assembly. Such electrodes exhibit a high reversible capacity, high rate capability, and long cycling stability for both lithium and sodium storage. PMID:27722078

  6. Solar cell array interconnects

    DOEpatents

    Carey, Paul G.; Thompson, Jesse B.; Colella, Nicolas J.; Williams, Kenneth A.

    1995-01-01

    Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

  7. Solar cell array interconnects

    DOEpatents

    Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

    1995-11-14

    Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

  8. Laser printed interconnects for flexible electronics

    NASA Astrophysics Data System (ADS)

    Pique, Alberto; Beniam, Iyoel; Mathews, Scott; Charipar, Nicholas

    Laser-induced forward transfer (LIFT) can be used to generate microscale 3D structures for interconnect applications non-lithographically. The laser printing of these interconnects takes place through aggregation of voxels of either molten metal or dispersed metallic nanoparticles. However, the resulting 3D structures do not achieve the bulk conductivity of metal interconnects of the same cross-section and length as those formed by wire bonding or tab welding. It is possible, however, to laser transfer entire structures using a LIFT technique known as lase-and-place. Lase-and-place allows whole components and parts to be transferred from a donor substrate onto a desired location with one single laser pulse. This talk will present the use of LIFT to laser print freestanding solid metal interconnects to connect individual devices into functional circuits. Furthermore, the same laser can bend or fold the thin metal foils prior to transfer, thus forming compliant 3D structures able to provide strain relief due to flexing or thermal mismatch. Examples of these laser printed 3D metallic bridges and their role in the development of next generation flexible electronics by additive manufacturing will be presented. This work was funded by the Office of Naval Research (ONR) through the Naval Research Laboratory Basic Research Program.

  9. Avioptic plug-in interconnection

    NASA Astrophysics Data System (ADS)

    Caserta, Anthony L.; Lijoi, Bruno

    1989-05-01

    A secure interconnection is claimed for optical and avioptic cables located in exposed positions, which often occur on aircraft communications circuits, for connecting those cables into equipment such as circuit boards. In this invention the interconnection for optical fiber cables comprises a connector which is engaged in a receptacle in a mother board provided with optical circuitry. The connector comprises a cuplike body or plug containing a metal sleeve which encases the optical fiber cable such that the cable end is exposed. The mating receptacle comprises a cylindrical shell having its lower end embedded in the mother board. A hole in the receptacle shell wall receives the end of an optical fiber on the optical circuitry of the mother board. The end of the sleeve of the connector fits over the end of the receptacle shell protruding from the mother board. Beam deflection means in the receptacle or on the connector directs light between the fiber optic cable and the optical circuit element of the mother board. Electrical coupling can be incorporated into the interconnection such that the termination can accommodate electrical as well as optical functions.

  10. Double interconnection fuel cell array

    DOEpatents

    Draper, Robert; Zymboly, Gregory E.

    1993-01-01

    A fuel cell array (10) is made, containing number of tubular, elongated fuel cells (12) which are placed next to each other in rows (A, B, C, D), where each cell contains inner electrodes (14) and outer electrodes (18 and 18'), with solid electrolyte (16 and 16') between the electrodes, where the electrolyte and outer electrode are discontinuous, having two portions, and providing at least two opposed discontinuities which contain at least two oppositely opposed interconnections (20 and 20') contacting the inner electrode (14), each cell (12) having only three metallic felt electrical connectors (22) which contact surrounding cells, where each row is electrically connected to the other.

  11. Micro-fluidic interconnect

    DOEpatents

    Okandan, Murat; Galambos, Paul C.; Benavides, Gilbert L.; Hetherington, Dale L.

    2006-02-28

    An apparatus for simultaneously aligning and interconnecting microfluidic ports is presented. Such interconnections are required to utilize microfluidic devices fabricated in Micro-Electromechanical-Systems (MEMS) technologies, that have multiple fluidic access ports (e.g. 100 micron diameter) within a small footprint, (e.g. 3 mm.times.6 mm). Fanout of the small ports of a microfluidic device to a larger diameter (e.g. 500 microns) facilitates packaging and interconnection of the microfluidic device to printed wiring boards, electronics packages, fluidic manifolds etc.

  12. Novel interconnect deposition technology

    NASA Astrophysics Data System (ADS)

    Speckman, D. M.; Wendt, J. P.

    1991-12-01

    A new series of experiments was initiated to improve current interconnect deposition technology for integrated circuits. Preliminary aluminum deposition experiments were carried out using trimethylamine(alane) as the precursor, and some mildly reflective, uniform aluminum films were successfully deposited on glass slides, suggesting that chemical vapor deposition (CVD) will be a practicable deposition technique for advanced integrated circuit interconnect films. CVD studies of aluminum and zirconium- and hafnium-diboride thin films are continuing.

  13. LTCC interconnects in microsystems

    NASA Astrophysics Data System (ADS)

    Rusu, Cristina; Persson, Katrin; Ottosson, Britta; Billger, Dag

    2006-06-01

    Different microelectromechanical system (MEMS) packaging strategies towards high packaging density of MEMS devices and lower expenditure exist both in the market and in research. For example, electrical interconnections and low stress wafer level packaging are essential for improving device performance. Hybrid integration of low temperature co-fired ceramics (LTCC) with Si can be a way for an easier packaging system with integrated electrical interconnection, and as well towards lower costs. Our research on LTCC-Si integration is reported in this paper.

  14. Zee electrical interconnect

    NASA Technical Reports Server (NTRS)

    Rust, Thomas M. (Inventor); Gaddy, Edward M. (Inventor); Herriage, Michael J. (Inventor); Patterson, Robert E. (Inventor); Partin, Richard D. (Inventor)

    2001-01-01

    An interconnect, having some length, that reliably connects two conductors separated by the length of the interconnect when the connection is made but in which one length if unstressed would change relative to the other in operation. The interconnect comprises a base element an intermediate element and a top element. Each element is rectangular and formed of a conducting material and has opposed ends. The elements are arranged in a generally Z-shape with the base element having one end adapted to be connected to one conductor. The top element has one end adapted to be connected to another conductor and the intermediate element has its ends disposed against the other end of the base and the top element. Brazes mechanically and electrically interconnect the intermediate element to the base and the top elements proximate the corresponding ends of the elements. When the respective ends of the base and the top elements are connected to the conductors, an electrical connection is formed therebetween, and when the conductors are relatively moved or the interconnect elements change length the elements accommodate the changes and the associated compression and tension forces in such a way that the interconnect does not mechanically fatigue.

  15. Viewing Integrated-Circuit Interconnections By SEM

    NASA Technical Reports Server (NTRS)

    Lawton, Russel A.; Gauldin, Robert E.; Ruiz, Ronald P.

    1990-01-01

    Back-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.

  16. Viewing Integrated-Circuit Interconnections By SEM

    NASA Technical Reports Server (NTRS)

    Lawton, Russel A.; Gauldin, Robert E.; Ruiz, Ronald P.

    1990-01-01

    Back-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.

  17. Enabling Inexpensive Metallic Alloys as SOFC Interconnects: An Investigation into Hybrid Coating Technologies to Deposit Nanocomposite Functional Coatings on Ferritic Stainless Steel

    SciTech Connect

    Gannon, Paul; Gorokhovsky, Vladimir I.; Deibert, Max; Smith, Richard J.; Kayani, Asghar N.; White, P T.; Sofie, Stephen W.; Yang, Z Gary; Mccready, David E.; Visco, S.; Jacobson, C.; Kurokawa, H.

    2007-11-01

    Reduced operating temperatures (600-800°C) of Solid Oxide Fuel Cells (SOFCs) may enable the use of inexpensive ferritic steels as interconnects. Due to the demanding SOFC interconnect operating environment, protective coatings are required to increase long-term stability. In this study, large area filtered arc deposition (LAFAD) and hybrid filtered arc-assisted electron beam physical vapor deposition (FA-EBPVD) technologies were used to deposit two-segment coatings with Cr-Al-Y-O nanocomposite bottom segments and Mn-Co-O spinel-based top segments. Coatings were deposited on ferritic steels and subsequently annealed in air for various times. Surface oxidation was investigated using SEM/EDS, XRD and RBS analyses. Cr-volatilization was evaluated by transpiration and ICP-MS analysis of the resultant condensate. Time dependent Area Specific Resistance (ASR) was studied using the four-point technique. The oxidation behavior, Cr volatilization rate, and ASR of coated and uncoated samples are reported. Significant long-term (>1,000 hours) surface stability, low ASR, and dramatically reduced Cr-volatility were observed with the coated specimens. Improvement mechanisms, including the coating diffusion barrier properties and electrical conductivity are discussed.

  18. Optically interconnected phased arrays

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Kunath, Richard R.

    1988-01-01

    Phased-array antennas are required for many future NASA missions. They will provide agile electronic beam forming for communications and tracking in the range of 1 to 100 GHz. Such phased arrays are expected to use several hundred GaAs monolithic integrated circuits (MMICs) as transmitting and receiving elements. However, the interconnections of these elements by conventional coaxial cables and waveguides add weight, reduce flexibility, and increase electrical interference. Alternative interconnections based on optical fibers, optical processing, and holography are under evaluation as possible solutions. In this paper, the current status of these techniques is described. Since high-frequency optical components such as photodetectors, lasers, and modulators are key elements in these interconnections, their performance and limitations are discussed.

  19. Welded solar cell interconnection

    NASA Technical Reports Server (NTRS)

    Stofel, E. J.; Browne, E. R.; Meese, R. A.; Vendura, G. J.

    1982-01-01

    The efficiency of the welding of solar-cell interconnects is compared with the efficiency of soldering such interconnects, and the cases in which welding may be superior are examined. Emphasis is placed on ultrasonic welding; attention is given to the solar-cell welding machine, the application of the welding process to different solar-cell configurations, producibility, and long-life performance of welded interconnects. Much of the present work has been directed toward providing increased confidence in the reliability of welding using conditions approximating those that would occur with large-scale array production. It is concluded that there is as yet insufficient data to determine which of three methods (soldering, parallel gap welding, and ultrasonic welding) provides the longest-duration solar panel life.

  20. SOFC INTERCONNECT DEVELOPMENT

    SciTech Connect

    Diane M. England

    2003-06-06

    This report summarizes the interconnect work being performed at Delphi. Materials were chosen for this interconnect project were chosen from ferritic and austenitic stainless steels, and nickel-based superalloys. The alloys are thermally cycled in air and a wet hydrogen atmosphere. The oxide scale adherence, electrical resistance and oxidation resistance are determined after long-term oxidation of each alloy. The oxide scale adherence will be observed using a scanning electron microscope. The electrical resistance of the oxidized alloys will be determined using an electrical resistance measurement apparatus which has been designed and is currently being built. Data from the electrical resistance measurement is expected to be provided in the second quarter.

  1. Interconnect Between a Waveguide and a Dielectric Waveguide Comprising an Impedance Matched Dielectric Lens

    NASA Technical Reports Server (NTRS)

    Decrossas, Emmanuel (Inventor); Chattopadhyay, Goutam (Inventor); Chahat, Nacer (Inventor); Tang, Adrian J. (Inventor)

    2016-01-01

    A lens for interconnecting a metallic waveguide with a dielectric waveguide is provided. The lens may be coupled a metallic waveguide and a dielectric waveguide, and minimize a signal loss between the metallic waveguide and the dielectric waveguide.

  2. Optical transceivers for interconnections in satellite payloads

    NASA Astrophysics Data System (ADS)

    Karppinen, Mikko; Heikkinen, Veli; Juntunen, Eveliina; Kautio, Kari; Ollila, Jyrki; Sitomaniemi, Aila; Tanskanen, Antti

    2013-02-01

    The increasing data rates and processing on board satellites call for the use of photonic interconnects providing high-bitrate performance as well as valuable savings in mass and volume. Therefore, optical transmitter and receiver technology is developed for aerospace applications. The metal-ceramic-packaging with hermetic fiber pigtails enables robustness for the harsh spacecraft environment, while the 850-nm VCSEL-based transceiver technology meets the high bit-rate and low power requirements. The developed components include 6 Gbps SpaceFibre duplex transceivers for intra-satellite data links and 40 Gbps parallel optical transceivers for board-to-board interconnects. Also, integration concept of interchip optical interconnects for onboard processor ICs is presented.

  3. Capillary interconnect device

    SciTech Connect

    Renzi, Ronald F

    2013-11-19

    An interconnecting device for connecting a plurality of first fluid-bearing conduits to a corresponding plurality of second fluid-bearing conduits thereby providing fluid communication between the first fluid-bearing conduits and the second fluid-bearing conduits. The device includes a manifold and one or two ferrule plates that are held by compressive axial forces.

  4. Interconnecting with VIPs

    ERIC Educational Resources Information Center

    Collins, Robert

    2013-01-01

    Interconnectedness changes lives. It can even save lives. Recently the author got to witness and be part of something in his role as a teacher of primary science that has changed lives: it may even have saved lives. It involved primary science teaching--and the climate. Robert Collins describes how it is all interconnected. The "Toilet…

  5. Open Systems Interconnection.

    ERIC Educational Resources Information Center

    Denenberg, Ray

    1985-01-01

    Discusses the need for standards allowing computer-to-computer communication and gives examples of technical issues. The seven-layer framework of the Open Systems Interconnection (OSI) Reference Model is explained and illustrated. Sidebars feature public data networks and Recommendation X.25, OSI standards, OSI layer functions, and a glossary.…

  6. CAISSON: Interconnect Network Simulator

    NASA Technical Reports Server (NTRS)

    Springer, Paul L.

    2006-01-01

    Cray response to HPCS initiative. Model future petaflop computer interconnect. Parallel discrete event simulation techniques for large scale network simulation. Built on WarpIV engine. Run on laptop and Altix 3000. Can be sized up to 1000 simulated nodes per host node. Good parallel scaling characteristics. Flexible: multiple injectors, arbitration strategies, queue iterators, network topologies.

  7. Interconnecting with VIPs

    ERIC Educational Resources Information Center

    Collins, Robert

    2013-01-01

    Interconnectedness changes lives. It can even save lives. Recently the author got to witness and be part of something in his role as a teacher of primary science that has changed lives: it may even have saved lives. It involved primary science teaching--and the climate. Robert Collins describes how it is all interconnected. The "Toilet…

  8. A 3D Nanostructure Based on Transition-Metal Phosphide Decorated Heteroatom-Doped Mesoporous Nanospheres Interconnected with Graphene: Synthesis and Applications.

    PubMed

    Qiu, Shuilai; Xing, Weiyi; Mu, Xiaowei; Feng, Xiaming; Ma, Chao; Yuen, Richard K K; Hu, Yuan

    2016-11-30

    A novel three-dimensional nanostructure based on cobalt phosphide nanoparticles (Co2P NPs) and heteroatom-doped mesoporous carbon spheres interconnected with graphene (3D PZM@Co2P@RGO) was facilely synthesized for the first time, and it was used for enhancing the flame retardancy and toxicity suppression of epoxy resins (EP) via a synergistic effect. Herein, the cross-linked polyphosphazene hollow spheres (PZM) were used as templates for the fabrication of 3D architecture. The 3D architecture based on Co2P-decorated heteroatom-doped carbon sphere and reduced graphene oxide was prepared via a carbonization procedure followed by a hydrothermal self-assembly strategy. The as-prepared material exhibits excellent catalytic activity with regard to the combustion process. Notably, inclusion of incorporating PZM@Co2P@RGO resulted in a dramatic reduction of the fire hazards of EP, such as a 47.9% maximum decrease in peak heat release rate and a 29.2% maximum decrease in total heat release, lower toxic CO yield, and formation of high-graphitized protective char layer. In addition, the mechanism for flame retardancy and toxicity suppression was proposed. It is reasonable to know that the improved flame-retardant performance for EP nanocomposites is attributed to tripartite cooperative effect from respective components (Co2P NPs and RGO) plus the heteroatom-doped carbon spheres.

  9. Electrochemical planarization for multilevel metallization

    SciTech Connect

    Contolini, R.J.; Bernhardt, A.F.; Mayer, S.T. )

    1994-09-01

    The authors describe an electrochemical planarization technology involving electroplating followed by electropolishing, resulting in a very flat surface containing embedded conductors. Electrochemical planarization technology has been used to produce silicon substrate multichip modules. Both the electroplating and electropolishing processes have a thickness uniformity of better than [+-] 2% ([+-]3[sigma]) across a 100 mm wafer.

  10. Photovoltaic sub-cell interconnects

    DOEpatents

    van Hest, Marinus Franciscus Antonius Maria; Swinger Platt, Heather Anne

    2017-05-09

    Photovoltaic sub-cell interconnect systems and methods are provided. In one embodiment, a photovoltaic device comprises a thin film stack of layers deposited upon a substrate, wherein the thin film stack layers are subdivided into a plurality of sub-cells interconnected in series by a plurality of electrical interconnection structures; and wherein the plurality of electrical interconnection structures each comprise no more than two scribes that penetrate into the thin film stack layers.

  11. Interconnected network of cameras

    NASA Astrophysics Data System (ADS)

    Hosseini Kamal, Mahdad; Afshari, Hossein; Leblebici, Yusuf; Schmid, Alexandre; Vandergheynst, Pierre

    2013-02-01

    The real-time development of multi-camera systems is a great challenge. Synchronization and large data rates of the cameras adds to the complexity of these systems as well. The complexity of such system also increases as the number of their incorporating cameras increases. The customary approach to implementation of such system is a central type, where all the raw stream from the camera are first stored then processed for their target application. An alternative approach is to embed smart cameras to these systems instead of ordinary cameras with limited or no processing capability. Smart cameras with intra and inter camera processing capability and programmability at the software and hardware level will offer the right platform for distributed and parallel processing for multi- camera systems real-time application development. Inter camera processing requires the interconnection of smart cameras in a network arrangement. A novel hardware emulating platform is introduced for demonstrating the concept of the interconnected network of cameras. A methodology is demonstrated for the interconnection network of camera construction and analysis. A sample application is developed and demonstrated.

  12. Accelerated Wafer-Level Integrated Circuit Reliability Testing for Electromigration in Metal Interconnects with Enhanced Thermal Modeling, Structure Design, Control of Stress, and Experimental Measurements.

    NASA Astrophysics Data System (ADS)

    Shih, Chih-Ching

    Wafer-level electromigration tests have been developed recently to fulfill the need for rapid testing in integrated circuit production facilities. We have developed an improved thermal model-TEARS (Thermal Energy Accounts for the Resistance of the System) that supports these tests. Our model is enhanced by treatments for determination of the thermal conductivity of metal, K_{m}, heat sinking effects of the voltage probes and current lead terminations, and thermoelectric power. Our TEARS analysis of multi-element SWEAT (Standard Wafer-level Electromigration Acceleration Test) structures yields design criteria for the length of current injection leads and choice of voltage probe locations to isolate test units from the heat sinking effect of current lead terminations. This also provides greater insight into the current for thermal runaway. From our TEARS model and Black's equation for lifetime prediction, we have developed an algorithm for a fast and accurate control of stress in SWEAT tests. We have developed a lookup table approach for precise electromigration characterizations without complicated calculations. It decides the peak temperature in the metal, T_ {max}, and the thermal conductivity of the insulator, K_{i}, from an experimental resistance measurement at a given current. We introduce a characteristic temperature, T _{EO}, which is much simpler to use than conventional temperature coefficient of the electrical resistivity of metal for calibration and transfer of calibration data of metallic films as their own temperature sensors. The use of T_{EO} also allows us to establish system specifications for a desirable accuracy in temperature measurement. Our experimental results are the first to show the effects of series elemental SWEAT units on the system failure distribution, spatial failure distribution in SWEAT structures, and bimodal distributions for straight-line structures. The adaptive approach of our TEARS based SWEAT test decides the value of Black

  13. Carbon Nanotube Interconnect

    NASA Technical Reports Server (NTRS)

    Li, Jun (Inventor); Meyyappan, Meyya (Inventor)

    2006-01-01

    Method and system for fabricating an electrical interconnect capable of supporting very high current densities ( 10(exp 6)-10(exp 10) Amps/sq cm), using an array of one or more carbon nanotubes (CNTs). The CNT array is grown in a selected spaced apart pattern, preferably with multi-wall CNTs, and a selected insulating material, such as SiOw, or SiuNv is deposited using CVD to encapsulate each CNT in the array. An exposed surface of the insulating material is planarized to provide one or more exposed electrical contacts for one or more CNTs.

  14. Effect of pre-oxidation and environmental aging on the seal strength of a novel high-temperature solid oxide fuel cell (SOFC) sealing glass with metallic interconnect

    SciTech Connect

    Chou, Y. S.; Stevenson, Jeffry W.; Singh, Prabhakar

    2008-09-15

    A novel high-temperature alkaline-earth silicate sealing glass was developed for solid oxide fuel cell (SOFC) applications. The glass was used to join two ferritic stainless steel coupons for strength evaluation. The steel coupons were pre-oxidized at elevated temperatures to promote thick oxide layers to simulate long-term exposure conditions. In addition, seals to as-received metal coupons were also tested after aging in oxidizing or reducing environments to simulate the actual SOFC environment. Room temperature tensile testing showed strength degradation when using pre-oxidized coupons, and more extensive degradation after aging in air. Fracture surface and microstructural analysis confirmed that the cause of degradation was formation of SrCrO4 at the outer sealing edges exposed to air.

  15. Multilevel and Diverse Classrooms

    ERIC Educational Resources Information Center

    Baurain, Bradley, Ed.; Ha, Phan Le, Ed.

    2010-01-01

    The benefits and advantages of classroom practices incorporating unity-in-diversity and diversity-in-unity are what "Multilevel and Diverse Classrooms" is all about. Multilevel classrooms--also known as mixed-ability or heterogeneous classrooms--are a fact of life in ESOL programs around the world. These classrooms are often not only…

  16. Multilevel and Diverse Classrooms

    ERIC Educational Resources Information Center

    Baurain, Bradley, Ed.; Ha, Phan Le, Ed.

    2010-01-01

    The benefits and advantages of classroom practices incorporating unity-in-diversity and diversity-in-unity are what "Multilevel and Diverse Classrooms" is all about. Multilevel classrooms--also known as mixed-ability or heterogeneous classrooms--are a fact of life in ESOL programs around the world. These classrooms are often not only…

  17. Multilevel Mixture Factor Models

    ERIC Educational Resources Information Center

    Varriale, Roberta; Vermunt, Jeroen K.

    2012-01-01

    Factor analysis is a statistical method for describing the associations among sets of observed variables in terms of a small number of underlying continuous latent variables. Various authors have proposed multilevel extensions of the factor model for the analysis of data sets with a hierarchical structure. These Multilevel Factor Models (MFMs)…

  18. Metals and metalloid bioconcentrations in the tissues of Typha latifolia grown in the four interconnected ponds of a domestic landfill site.

    PubMed

    Ben Salem, Zohra; Laffray, Xavier; Al-Ashoor, Ahmed; Ayadi, Habib; Aleya, Lotfi

    2017-04-01

    The uptake of metals in roots and their transfer to rhizomes and above-ground plant parts (stems, leaves) of cattails (Typha latifolia L.) were studied in leachates from a domestic landfill site (Etueffont, France) and treated in a natural lagooning system. Plant parts and corresponding water and sediment samples were taken at the inflow and outflow points of the four ponds at the beginning and at the end of the growing season. Concentrations of As, Cd, Cr, Cu, Fe, Mn, Ni and Zn in the different compartments were estimated and their removal efficiency assessed, reaching more than 90% for Fe, Mn and Ni in spring and fall as well in the water compartment. The above- and below-ground cattail biomass varied from 0.21 to 0.85, and 0.34 to 1.24kgdryweight/m(2), respectively, the highest values being recorded in the fourth pond in spring 2011. The root system was the first site of accumulation before the rhizome, stem and leaves. The highest metal concentration was observed in roots from cattails growing at the inflow of the system's first pond. The trend in the average trace element concentrations in the cattail plant organs can generally be expressed as: Fe>Mn>As > Zn>Cr>Cu>Ni>Cd for both spring and fall. While T. latifolia removes trace elements efficiently from landfill leachates, attention should also be paid to the negative effects of these elements on plant growth. Copyright © 2016. Published by Elsevier B.V.

  19. Polymeric optoelectronic interconnects

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.

    2000-04-01

    Electrical interconnects are reaching their fundamental limits and are becoming the speed bottleneck as processor speeds are increasing. A polymer-based interconnect technology was developed for affordable integrated optical circuits that address the optical signal processing needs in the telecom, datacom, and performance computing industries. We engineered organic polymers that can be readily made into single-mode, multimode, and micro-optical waveguide structures of controlled numerical apertures and geometries. These materials are formed from highly-crosslinked acrylate monomers with specific linkages that determine properties such as flexibility, robustness, optical loss, thermal stability, and humidity resistance. These monomers are intermiscible, providing for precise continuous adjustment of the refractive index over a wide range. In polymer form, they exhibit state-of-the-art loss values and exceptional environmental stability, enabling use in a variety of demanding applications. A wide range of rigid and flexible substrates can be used, including glass, quartz, silicon, glass-filled epoxy printed circuit board substrates, and flexible plastic films. The devices we describe include a variety of routing elements that can be sued as part of a massively parallel photonic integrated circuit on the MCM, board, or backplane level.

  20. Electrophoretic deposition of Mn1.5Co1.5O4 on metallic interconnect and interaction with glass-ceramic sealant for solid oxide fuel cells application

    NASA Astrophysics Data System (ADS)

    Smeacetto, Federico; De Miranda, Auristela; Cabanas Polo, Sandra; Molin, Sebastian; Boccaccini, Dino; Salvo, Milena; Boccaccini, Aldo R.

    2015-04-01

    Cr-containing stainless steels are widely used as metallic interconnects for SOFCs. Volatile Cr-containing species, which originate from the oxide formed on steel, can poison the cathode material and subsequently cause degradation in the SOFC stack. Mn1.5Co1.5O4 spinel is one of the most promising coating materials due to its high electrical conductivity, good CTE match with the stainless steel substrate and an excellent chromium retention capability. In this work Mn1.5Co1.5O4 spinel coatings are deposited on Crofer22APU substrates by cathodic electrophoretic deposition (EPD) followed by sintering at 800-1150 °C in different atmospheres. Dense, continuous and crack free Mn1.5Co1.5O4 coatings (with thickness ranging from 10 to 40 μm) are obtained on Crofer22APU substrates. Moreover, electrical properties of the coated Crofer22APU alloy are tested up to 2500 h and an excellent compatibility is found between Mn1.5Co1.5O4 coated Crofer22APU and a new glass-ceramic sealant, after 500 h of thermal tests in air, thus suggesting that the spinel protection layer can effectively act as a barrier to outward diffusion of Cr.

  1. Fuel cell system with interconnect

    DOEpatents

    Liu, Zhien; Goettler, Richard

    2015-09-29

    The present invention includes a fuel cell system having a plurality of adjacent electrochemical cells formed of an anode layer, a cathode layer spaced apart from the anode layer, and an electrolyte layer disposed between the anode layer and the cathode layer. The fuel cell system also includes at least one interconnect, the interconnect being structured to conduct free electrons between adjacent electrochemical cells. Each interconnect includes a primary conductor embedded within the electrolyte layer and structured to conduct the free electrons.

  2. Policy issues in interconnecting networks

    NASA Technical Reports Server (NTRS)

    Leiner, Barry M.

    1989-01-01

    To support the activities of the Federal Research Coordinating Committee (FRICC) in creating an interconnected set of networks to serve the research community, two workshops were held to address the technical support of policy issues that arise when interconnecting such networks. The workshops addressed the required and feasible technologies and architectures that could be used to satisfy the desired policies for interconnection. The results of the workshop are documented.

  3. Optical interconnection of optical modules

    NASA Astrophysics Data System (ADS)

    Schamschula, Marius P.; Caulfield, H. J.; Shamir, Joseph

    1990-12-01

    The most plausible possible uses of nonlinear optics as the bases for interconnections among complex optical modules are evaluated, with a view to such applications as neural networks that entail large numbers of interconnections and numerous stages. Optical interconnection allows such a system to be composed of many modules as well as to incorporate switching- and amplification-function optical nonlinearities. While it is possible to achieve a pixel-by-pixel, diffraction-limited flat-field relay with nonlinearity, where the interconnect allows for cascadability, the wave-particle duality is destroyed between stages.

  4. Probabilistic immortality of Cu damascene interconnects

    NASA Astrophysics Data System (ADS)

    Hau-Riege, Stefan P.

    2002-02-01

    We have studied electromigration short-line effects in Cu damascene interconnects through experiments on lines of various lengths L, stressed at a variety of current densities j, and embedded in different dielectric materials. We observed two modes of resistance evolution: Either the resistance of the lines remains constant for the duration of the test, so that the lines are considered immortal, or the lines fail due to abrupt open-circuit failure. The resistance was not observed to gradually increase and then saturate, as commonly observed in Al-based interconnects, because the barrier is too thin and resistive to serve as a redundant current path should voiding occur. The critical stress for void nucleation was found to be smaller than 41 MPa, since voiding occurred even under the mildest test conditions of j=2 MA/cm2 and L=10.5 μm at 300 °C. A small fraction of short Cu lines failed even at low current densities, which deems necessary a concept of probabilistic immortality rather than deterministic immortality. Experiments and modeling suggest that the probability of immortality is described by (jL2/B), where B is the effective elastic modulus of the metallization scheme. By contrast, the immortality of Al-based interconnects with shunt layers is described by (jL) if no voids nucleate, and (jL/B) if voids do nucleate. Even though the phenomenology of short-line effects differs for Al- and Cu-based interconnects, the immortality of interconnects of either materials system can be explained by the phenomena of nucleation barriers for void formation and void-growth saturation. The differences are due solely to the absence of a shunt layer and the low critical stress for void nucleation in the case of Cu.

  5. Epidemics on interconnected networks

    NASA Astrophysics Data System (ADS)

    Dickison, Mark; Havlin, S.; Stanley, H. E.

    2012-06-01

    Populations are seldom completely isolated from their environment. Individuals in a particular geographic or social region may be considered a distinct network due to strong local ties but will also interact with individuals in other networks. We study the susceptible-infected-recovered process on interconnected network systems and find two distinct regimes. In strongly coupled network systems, epidemics occur simultaneously across the entire system at a critical infection strength βc, below which the disease does not spread. In contrast, in weakly coupled network systems, a mixed phase exists below βc of the coupled network system, where an epidemic occurs in one network but does not spread to the coupled network. We derive an expression for the network and disease parameters that allow this mixed phase and verify it numerically. Public health implications of communities comprising these two classes of network systems are also mentioned.

  6. Copper Nanowire Production for Interconnect Applications

    NASA Technical Reports Server (NTRS)

    Han, Jin-Woo (Inventor); Meyyappan, Meyya (Inventor)

    2014-01-01

    A method of fabricating metallic Cu nanowires with lengths up to about 25 micrometers and diameters in a range 20-100 nanometers, or greater if desired. Vertically oriented or laterally oriented copper oxide structures (CuO and/or Cu2O) are grown on a Cu substrate. The copper oxide structures are reduced with 99+ percent H or H2, and in this reduction process the lengths decrease (to no more than about 25 micrometers), the density of surviving nanostructures on a substrate decreases, and the diameters of the surviving nanostructures have a range, of about 20-100 nanometers. The resulting nanowires are substantially pure Cu and can be oriented laterally (for local or global interconnects) or can be oriented vertically (for standard vertical interconnects).

  7. Multilevel filtering elliptic preconditioners

    NASA Technical Reports Server (NTRS)

    Kuo, C. C. Jay; Chan, Tony F.; Tong, Charles

    1989-01-01

    A class of preconditioners is presented for elliptic problems built on ideas borrowed from the digital filtering theory and implemented on a multilevel grid structure. They are designed to be both rapidly convergent and highly parallelizable. The digital filtering viewpoint allows the use of filter design techniques for constructing elliptic preconditioners and also provides an alternative framework for understanding several other recently proposed multilevel preconditioners. Numerical results are presented to assess the convergence behavior of the new methods and to compare them with other preconditioners of multilevel type, including the usual multigrid method as preconditioner, the hierarchical basis method and a recent method proposed by Bramble-Pasciak-Xu.

  8. Multilevel ensemble Kalman filtering

    SciTech Connect

    Hoel, Hakon; Law, Kody J. H.; Tempone, Raul

    2016-06-14

    This study embeds a multilevel Monte Carlo sampling strategy into the Monte Carlo step of the ensemble Kalman filter (EnKF) in the setting of finite dimensional signal evolution and noisy discrete-time observations. The signal dynamics is assumed to be governed by a stochastic differential equation (SDE), and a hierarchy of time grids is introduced for multilevel numerical integration of that SDE. Finally, the resulting multilevel EnKF is proved to asymptotically outperform EnKF in terms of computational cost versus approximation accuracy. The theoretical results are illustrated numerically.

  9. Multilevel ensemble Kalman filtering

    DOE PAGES

    Hoel, Hakon; Law, Kody J. H.; Tempone, Raul

    2016-06-14

    This study embeds a multilevel Monte Carlo sampling strategy into the Monte Carlo step of the ensemble Kalman filter (EnKF) in the setting of finite dimensional signal evolution and noisy discrete-time observations. The signal dynamics is assumed to be governed by a stochastic differential equation (SDE), and a hierarchy of time grids is introduced for multilevel numerical integration of that SDE. Finally, the resulting multilevel EnKF is proved to asymptotically outperform EnKF in terms of computational cost versus approximation accuracy. The theoretical results are illustrated numerically.

  10. Printed interconnects for photovoltaic modules

    SciTech Connect

    Fields, J. D.; Pach, G.; Horowitz, K. A. W.; Stockert, T. R.; Woodhouse, M.; van Hest, M. F. A. M.

    2017-01-01

    Film-based photovoltaic modules employ monolithic interconnects to minimize resistance loss and enhance module voltage via series connection. Conventional interconnect construction occurs sequentially, with a scribing step following deposition of the bottom electrode, a second scribe after deposition of absorber and intermediate layers, and a third following deposition of the top electrode. This method produces interconnect widths of about 300 um, and the area comprised by interconnects within a module (generally about 3%) does not contribute to power generation. The present work reports on an increasingly popular strategy capable of reducing the interconnect width to less than 100 um: printing interconnects. Cost modeling projects a savings of about $0.02/watt for CdTe module production through the use of printed interconnects, with savings coming from both reduced capital expense and increased module power output. Printed interconnect demonstrations with copper-indium-gallium-diselenide and cadmium-telluride solar cells show successful voltage addition and miniaturization down to 250 um. Material selection guidelines and considerations for commercialization are discussed.

  11. Printed interconnects for photovoltaic modules

    DOE PAGES

    Fields, J. D.; Pach, G.; Horowitz, K. A. W.; ...

    2016-10-21

    Film-based photovoltaic modules employ monolithic interconnects to minimize resistance loss and enhance module voltage via series connection. Conventional interconnect construction occurs sequentially, with a scribing step following deposition of the bottom electrode, a second scribe after deposition of absorber and intermediate layers, and a third following deposition of the top electrode. This method produces interconnect widths of about 300 µm, and the area comprised by interconnects within a module (generally about 3%) does not contribute to power generation. The present work reports on an increasingly popular strategy capable of reducing the interconnect width to less than 100 µm: printing interconnects.more » Cost modeling projects a savings of about $0.02/watt for CdTe module production through the use of printed interconnects, with savings coming from both reduced capital expense and increased module power output. Printed interconnect demonstrations with copper-indium-gallium-diselenide and cadmium-telluride solar cells show successful voltage addition and miniaturization down to 250 µm. As a result, material selection guidelines and considerations for commercialization are discussed.« less

  12. Multilevel Charge Storage in a Multiple Alloy Nanodot Memory

    NASA Astrophysics Data System (ADS)

    Lee, Gae-Hun; Lee, Jung-Min; Heub Song, Yun; Bea, Ji Chel; Tanaka, Tetsu; Koyanagi, Mitsumasa

    2011-09-01

    A multilevel charge storage in a multiple FePt alloy nanodot memory is investigated for the first time. It is demonstrated that the memory structure with multiple FePt nanodot layers effectively realizes a multilevel state by the adjustment of gate voltage. Metal oxide semiconductor (MOS) capacitors with four FePt nanodot layers as a floating gate are fabricated to evaluate the multilevel cell characteristic and reliability. Here, the effect of memory window for a nanodot diameter is also investigated, and it is found that a smaller dot size gives a larger window. From the results showing good endurance and retention characteristics for the multilevel states, it is expected that a multiple FePt nanodot memory using Fowler-Nordheim (FN) tunneling can be a candidate structure for the future multilevel NAND flash memory.

  13. Process for electrically interconnecting electrodes

    DOEpatents

    Carey, Paul G.; Thompson, Jesse B.; Colella, Nicolas J.; Williams, Kenneth A.

    2002-01-01

    Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb--Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb--Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

  14. Method of doping interconnections for electrochemical cells

    DOEpatents

    Pal, Uday B.; Singhal, Subhash C.; Moon, David M.; Folser, George R.

    1990-01-01

    A dense, electronically conductive interconnection layer 26 is bonded on a porous, tubular, electronically conductive air electrode structure 16, optionally supported by a ceramic support 22, by (A) forming a layer of oxide particles of at least one of the metals Ca, Sr, Co, Ba or Mg on a part 24 of a first surface of the air electrode 16, (B) heating the electrode structure, (C) applying a halide vapor containing at least lanthanum halide and chromium halide to the first surface and applying a source of oxygen to a second opposite surface of the air electrode so that they contact at said first surface, to cause a reaction of the oxygen and halide and cause a dense lanthanum-chromium oxide structure to grow, from the first electrode surface, between and around the oxide particles, where the metal oxide particles get incoporated into the lanthanum-chromium oxide structure as it grows thicker with time, and the metal ions in the oxide particles diffuse into the bulk of the lanthamum-chromium oxide structure, to provide a dense, top, interconnection layer 26 on top of the air electrode 16. A solid electrolyte layer 18 can be applied to the uncovered portion of the air electrode, and a fuel electrode 20 can be applied to the solid electrolyte, to provide an electrochemical cell 10.

  15. Stretchable interconnections for flexible electronic systems.

    PubMed

    Jianhui, Lin; Bing, Yan; Xiaoming, Wu; Tianling, Ren; Litian, Liu

    2009-01-01

    Sensors, actuators and integrated circuits (IC) can be encapsulated together on an elastic substrate, which makes a flexible electronic system. In this system, electrical interconnections that can sustain large and reversible stretching are in great need. This paper is devoted to the fabrication of highly stretchable metal interconnections. Transfer printing technology is utilized, which mainly involves the transfer of 100-nm-thick gold ribbons from silicon wafers to pre-stretched elastic substrates. After the elastic substrates relax from the pre-strain, the gold ribbons buckle and form wavy geometries. These wavy geometries change in shapes to accommodate the applied strain and can be reversely stretched without cracks or fractures occurring, which will greatly raise the stretchability of the gold ribbons. As an application example, some of these wavy ribbons can accommodate high levels of stretching (up to 100%) and bending (with curvature radius down to 1.20 mm). Moreover, the efficiency and reliability of the transfer, especially for slender ribbons, have been increased due to the improvement of the technology. All the characteristics above will permit making stretchable gold conductors as interconnections for flexible electronic systems such as implantable medical systems and smart clothes.

  16. Interconnecting heterogeneous database management systems

    NASA Technical Reports Server (NTRS)

    Gligor, V. D.; Luckenbaugh, G. L.

    1984-01-01

    It is pointed out that there is still a great need for the development of improved communication between remote, heterogeneous database management systems (DBMS). Problems regarding the effective communication between distributed DBMSs are primarily related to significant differences between local data managers, local data models and representations, and local transaction managers. A system of interconnected DBMSs which exhibit such differences is called a network of distributed, heterogeneous DBMSs. In order to achieve effective interconnection of remote, heterogeneous DBMSs, the users must have uniform, integrated access to the different DBMs. The present investigation is mainly concerned with an analysis of the existing approaches to interconnecting heterogeneous DBMSs, taking into account four experimental DBMS projects.

  17. Fast process flow, on-wafer interconnection and singulation for MEPV

    DOEpatents

    Okandan, Murat; Nielson, Gregory N.; Cruz-Campa, Jose Luis; Sanchez, Carlos Anthony

    2017-01-31

    A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality of metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.

  18. Renewable Systems Interconnection: Executive Summary

    SciTech Connect

    Kroposki, B.; Margolis, R.; Kuswa, G.; Torres, J.; Bower, W.; Key, T.; Ton, D.

    2008-02-01

    The U.S. Department of Energy launched the Renewable Systems Interconnection (RSI) study in 2007 to address the challenges to high penetrations of distributed renewable energy technologies. The RSI study consists of 14 additional reports.

  19. Universal Interconnection Technology Workshop Proceedings

    SciTech Connect

    Sheaffer, P.; Lemar, P.; Honton, E. J.; Kime, E.; Friedman, N. R.; Kroposki, B.; Galdo, J.

    2002-10-01

    The Universal Interconnection Technology (UIT) Workshop - sponsored by the U.S. Department of Energy, Distributed Energy and Electric Reliability (DEER) Program, and Distribution and Interconnection R&D - was held July 25-26, 2002, in Chicago, Ill., to: (1) Examine the need for a modular universal interconnection technology; (2) Identify UIT functional and technical requirements; (3) Assess the feasibility of and potential roadblocks to UIT; (4) Create an action plan for UIT development. These proceedings begin with an overview of the workshop. The body of the proceedings provides a series of industry representative-prepared papers on UIT functions and features, present interconnection technology, approaches to modularization and expandability, and technical issues in UIT development as well as detailed summaries of group discussions. Presentations, a list of participants, a copy of the agenda, and contact information are provided in the appendices of this document.

  20. Fuel cell system with interconnect

    DOEpatents

    Liu, Zhien; Goettler, Richard

    2016-12-20

    The present invention includes an integrated planar, series connected fuel cell system having electrochemical cells electrically connected via interconnects, wherein the anodes of the electrochemical cells are protected against Ni loss and migration via an engineered porous anode barrier layer.

  1. Multilevel corporate environmental responsibility.

    PubMed

    Karassin, Orr; Bar-Haim, Aviad

    2016-12-01

    The multilevel empirical study of the antecedents of corporate social responsibility (CSR) has been identified as "the first knowledge gap" in CSR research. Based on an extensive literature review, the present study outlines a conceptual multilevel model of CSR, then designs and empirically validates an operational multilevel model of the principal driving factors affecting corporate environmental responsibility (CER), as a measure of CSR. Both conceptual and operational models incorporate three levels of analysis: institutional, organizational, and individual. The multilevel nature of the design allows for the assessment of the relative importance of the levels and of their components in the achievement of CER. Unweighted least squares (ULS) regression analysis reveals that the institutional-level variables have medium relationships with CER, some variables having a negative effect. The organizational level is revealed as having strong and positive significant relationships with CER, with organizational culture and managers' attitudes and behaviors as significant driving forces. The study demonstrates the importance of multilevel analysis in improving the understanding of CSR drivers, relative to single level models, even if the significance of specific drivers and levels may vary by context.

  2. Development of Ceramic Interconnect Materials for SOFC

    SciTech Connect

    Yoon, Kyung J.; Stevenson, Jeffry W.; Marina, Olga A.

    2010-08-05

    Currently, acceptor-doped lanthanum chromite is the state-of-the-art ceramic interconnect material for high temperature solid oxide fuel cells (SOFCs) due to its fairly good electronic conductivity and chemical stability in both oxidizing and reducing atmospheres, and thermal compatibility with other cell components. The major challenge for acceptor-doped lanthanum chromite for SOFC interconnect applications is its inferior sintering behavior in air, which has been attributed to the development of a thin layer of Cr2O3 at the interparticle necks during the initial stages of sintering. In addition, lanthanum chromite is reactive with YSZ electrolyte at high temperatures, forming a highly resistive lanthanum zirconate phase (La2Zr2O7), which further complicates co-firing processes. Acceptor-doped yttrium chromite is considered to be one of the promising alternatives to acceptor-doped lanthanum chromite because it is more stable with respect to the formation of hydroxides in SOFC operating conditions, and the formation of impurity phases can be effectively avoided at co-firing temperatures. In addition, calcium-doped yttrium chromite exhibits higher mechanical strength than lanthanum chromite-based materials. The major drawback of yttrium chromite is considered to be its lower electrical conductivity than lanthanum chromite. The properties of yttrium chromites could possibly be improved and optimized by partial substitution of chromium with various transition metals. During FY10, PNNL investigated the effect of various transition metal doping on chemical stability, sintering and thermal expansion behavior, microstructure, electronic and ionic conductivity, and chemical compatibility with other cell components to develop the optimized ceramic interconnect material.

  3. Practical Marginalized Multilevel Models

    PubMed Central

    Griswold, Michael E.; Swihart, Bruce J.; Caffo, Brian S.; Zeger, Scott L.

    2013-01-01

    Clustered data analysis is characterized by the need to describe both systematic variation in a mean model and cluster-dependent random variation in an association model. Marginalized multilevel models embrace the robustness and interpretations of a marginal mean model, while retaining the likelihood inference capabilities and flexible dependence structures of a conditional association model. Although there has been increasing recognition of the attractiveness of marginalized multilevel models, there has been a gap in their practical application arising from a lack of readily available estimation procedures. We extend the marginalized multilevel model to allow for nonlinear functions in both the mean and association aspects. We then formulate marginal models through conditional specifications to facilitate estimation with mixed model computational solutions already in place. We illustrate the MMM and approximate MMM approaches on a cerebrovascular deficiency crossover trial using SAS and an epidemiological study on race and visual impairment using R. Datasets, SAS and R code are included as supplemental materials. PMID:24357884

  4. Growing Aligned Carbon Nanotubes for Interconnections in ICs

    NASA Technical Reports Server (NTRS)

    Li, Jun; Ye, Qi; Cassell, Alan; Ng, Hou Tee; Stevens, Ramsey; Han, Jie; Meyyappan, M.

    2005-01-01

    A process for growing multiwalled carbon nanotubes anchored at specified locations and aligned along specified directions has been invented. Typically, one would grow a number of the nanotubes oriented perpendicularly to a silicon integrated-circuit (IC) substrate, starting from (and anchored on) patterned catalytic spots on the substrate. Such arrays of perpendicular carbon nanotubes could be used as electrical interconnections between levels of multilevel ICs. The process (see Figure 1) begins with the formation of a layer, a few hundred nanometers thick, of a compatible electrically insulating material (e.g., SiO(x) or Si(y)N(z) on the silicon substrate. A patterned film of a suitable electrical conductor (Al, Mo, Cr, Ti, Ta, Pt, Ir, or doped Si), having a thickness between 1 nm and 2 m, is deposited on the insulating layer to form the IC conductor pattern. Next, a catalytic material (usually, Ni, Fe, or Co) is deposited to a thickness between 1 and 30 nm on the spots from which it is desired to grow carbon nanotubes. The carbon nanotubes are grown by plasma-enhanced chemical vapor deposition (PECVD). Unlike the matted and tangled carbon nanotubes grown by thermal CVD, the carbon nanotubes grown by PECVD are perpendicular and freestanding because an electric field perpendicular to the substrate is used in PECVD. Next, the free space between the carbon nanotubes is filled with SiO2 by means of CVD from tetraethylorthosilicate (TEOS), thereby forming an array of carbon nanotubes embedded in SiO2. Chemical mechanical polishing (CMP) is then performed to remove excess SiO2 and form a flat-top surface in which the outer ends of the carbon nanotubes are exposed. Optionally, depending on the application, metal lines to connect selected ends of carbon nanotubes may be deposited on the top surface. The top part of Figure 2 is a scanning electron micrograph (SEM) of carbon nanotubes grown, as described above, on catalytic spots of about 100 nm diameter patterned by

  5. Misalignment corrections in optical interconnects

    NASA Astrophysics Data System (ADS)

    Song, Deqiang

    Optical interconnects are considered a promising solution for long distance and high bitrate data transmissions, outperforming electrical interconnects in terms of loss and dispersion. Due to the bandwidth and distance advantage of optical interconnects, longer links have been implemented with optics. Recent studies show that optical interconnects have clear advantages even at very short distances---intra system interconnects. The biggest challenge for such optical interconnects is the alignment tolerance. Many free space optical components require very precise assembly and installation, and therefore the overall cost could be increased. This thesis studied the misalignment tolerance and possible alignment correction solutions for optical interconnects at backplane or board level. First the alignment tolerance for free space couplers was simulated and the result indicated the most critical alignments occur between the VCSEL, waveguide and microlens arrays. An in-situ microlens array fabrication method was designed and experimentally demonstrated, with no observable misalignment with the waveguide array. At the receiver side, conical lens arrays were proposed to replace simple microlens arrays for a larger angular alignment tolerance. Multilayer simulation models in CodeV were built to optimized the refractive index and shape profiles of the conical lens arrays. Conical lenses fabricated with micro injection molding machine and fiber etching were characterized. Active component VCSOA was used to correct misalignment in optical connectors between the board and backplane. The alignment correction capability were characterized for both DC and AC (1GHz) optical signal. The speed and bandwidth of the VCSOA was measured and compared with a same structure VCSEL. Based on the optical inverter being studied in our lab, an all-optical flip-flop was demonstrated using a pair of VCSOAs. This memory cell with random access ability can store one bit optical signal with set or

  6. Average interconnection length and interconnection distribution for rectangular arrays

    NASA Astrophysics Data System (ADS)

    Gura, Carol; Abraham, Jacob A.

    1989-05-01

    It is shown that it is necessary to utilize different partitioning coefficients in interconnection length analyses which are based on Rent's rule, depending on whether one- or two-dimensional placement strategies are used. Beta is the partitioning coefficient in the power-law relationship Alpha Beta which provides a measure of the number of interconnection that cross a boundary which encloses Beta blocks. The partitioning coefficients are Beta = p/2 and Beta = p for two- and one-dimensional arrays, respectively, where p is the experimental coefficient, of the Rent relationship. Based on these separate partitioning coefficients, an average interconnection length prediction is presented for rectangular arrays that out performs existing predictions. Examples are given to support this theory.

  7. Parallel multilevel adaptive methods

    NASA Technical Reports Server (NTRS)

    Dowell, B.; Govett, M.; Mccormick, S.; Quinlan, D.

    1989-01-01

    The progress of a project for the design and analysis of a multilevel adaptive algorithm (AFAC/HM/) targeted for the Navier Stokes Computer is discussed. The results of initial timing tests of AFAC, coupled with multigrid and an efficient load balancer, on a 16-node Intel iPSC/2 hypercube are included. The results of timing tests are presented.

  8. Prediction in Multilevel Models

    ERIC Educational Resources Information Center

    Afshartous, David; de Leeuw, Jan

    2005-01-01

    Multilevel modeling is an increasingly popular technique for analyzing hierarchical data. This article addresses the problem of predicting a future observable y[subscript *j] in the jth group of a hierarchical data set. Three prediction rules are considered and several analytical results on the relative performance of these prediction rules are…

  9. Manufacturing of planar ceramic interconnects

    SciTech Connect

    Armstrong, B.L.; Coffey, G.W.; Meinhardt, K.D.; Armstrong, T.R.

    1996-12-31

    The fabrication of ceramic interconnects for solid oxide fuel cells (SOFC) and separator plates for electrochemical separation devices has been a perennial challenge facing developers. Electrochemical vapor deposition (EVD), plasma spraying, pressing, tape casting and tape calendering are processes that are typically utilized to fabricate separator plates or interconnects for the various SOFC designs and electrochemical separation devices. For sake of brevity and the selection of a planar fuel cell or gas separation device design, pressing will be the only fabrication technique discussed here. This paper reports on the effect of the characteristics of two doped lanthanum manganite powders used in the initial studies as a planar porous separator for a fuel cell cathode and as a dense interconnect for an oxygen generator.

  10. Advanced micromechanisms in a multilevel polysilicon technology

    NASA Astrophysics Data System (ADS)

    Rodgers, M. Steven; Sniegowski, Jeffry J.; Miller, Samuel L.; Craig Barron, Carole; McWhorter, Paul J.

    1997-09-01

    Quad-level polysilicon surface micromachining technology, comprising three mechanical levels plus an electrical interconnect layer, is giving rise to a new generation of micro-electromechanical devices and assemblies. Enhanced components can now be produced through greater flexibility in fabrication and design. New levels of design complexity that include multi-level gears, single-attempt locks, and optical elements have recently been realized. Extensive utilization of the fourth layer of polysilicon differentiates these latter generation devices from their predecessors. This level of poly enables the fabrication of pin joints, linkage arms, hinges on moveable plates, and multi-level gear assemblies. The mechanical design aspects of these latest micromachines will be discussed with particular emphasis on a number of design modifications that improve the power, reliability, and smoothness of operation of the microengine. The microengine is the primary actuation mechanism that is being used to drive mirrors out of plane and rotate 1600-micrometers diameter gears. Also discussed is our most advanced micromechanical system to date, a complex proof-of-concept batch-fabricated assembly that, upon transmitting the proper electrical code to a mechanical lock, permits the operation of a micro-optical shutter.

  11. Fully-integrated, bezel-less transistor arrays using reversibly foldable interconnects and stretchable origami substrates

    NASA Astrophysics Data System (ADS)

    Kim, Mijung; Park, Jihun; Ji, Sangyoon; Shin, Sung-Ho; Kim, So-Yun; Kim, Young-Cheon; Kim, Ju-Young; Park, Jang-Ung

    2016-05-01

    Here we demonstrate fully-integrated, bezel-less transistor arrays using stretchable origami substrates and foldable conducting interconnects. Reversible folding of these arrays is enabled by origami substrates which are composed of rigid support fixtures and foldable elastic joints. In addition, hybrid structures of thin metal films and metallic nanowires worked as foldable interconnects which are located on the elastomeric joints.Here we demonstrate fully-integrated, bezel-less transistor arrays using stretchable origami substrates and foldable conducting interconnects. Reversible folding of these arrays is enabled by origami substrates which are composed of rigid support fixtures and foldable elastic joints. In addition, hybrid structures of thin metal films and metallic nanowires worked as foldable interconnects which are located on the elastomeric joints. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02041k

  12. Electrochemical Processing Tools for Advanced Copper Interconnects: An Introduction

    NASA Astrophysics Data System (ADS)

    Datta, Madhav

    The change from vacuum-deposited aluminum to electroplated copper in 1997 brought about a paradigm shift in interconnect technology and in chip making [1]. Since then, most of the leading chip manufacturers have converted to electroplated Cu technology for chip interconnects. Cu interconnects are fabricated by dual Damascene process which is referred to a metallization patterning process by which two insulator (dielectric) levels are patterned, filled with copper, and planarized to create a metal layer consisting of vias and lines. The process steps consist of laying a sandwich of two levels of insulator and etch stop layers that are patterned as holes for vias and troughs for lines. They are then filled with a single metallization step. Finally, the excess material is removed, and the wafer is planarized by chemical mechanical polishing (CMP). While finer details of exact sequence of fabrication steps vary, the end result of forming a metal layer remains the same in which vias are formed in the lower layer, and trenches are formed in the upper layer. Electroplating enables deposition of Cu in via holes and overlying trenches in a single step thus eliminating a via/line interface and significantly reducing the cycle time. Due to these reasons and due to relatively less expensive tooling, electroplating is a cost-effective and efficient process for Cu interconnects [2, 3]. Compared with vacuum deposition processes, electroplated Cu provides improved super filling capabilities and abnormal grain growth phenomena. These properties contribute significantly to improved reliability of Cu interconnects. With the proper choice of additives and plating conditions, void-free, seam-free Damascene deposits are obtained which eliminates surface-like fast diffusion paths for Cu electromigration.

  13. Multilevel Interventions: Measurement and Measures

    PubMed Central

    Charns, Martin P.; Alligood, Elaine C.; Benzer, Justin K.; Burgess, James F.; Mcintosh, Nathalie M.; Burness, Allison; Partin, Melissa R.; Clauser, Steven B.

    2012-01-01

    Background Multilevel intervention research holds the promise of more accurately representing real-life situations and, thus, with proper research design and measurement approaches, facilitating effective and efficient resolution of health-care system challenges. However, taking a multilevel approach to cancer care interventions creates both measurement challenges and opportunities. Methods One-thousand seventy two cancer care articles from 2005 to 2010 were reviewed to examine the state of measurement in the multilevel intervention cancer care literature. Ultimately, 234 multilevel articles, 40 involving cancer care interventions, were identified. Additionally, literature from health services, social psychology, and organizational behavior was reviewed to identify measures that might be useful in multilevel intervention research. Results The vast majority of measures used in multilevel cancer intervention studies were individual level measures. Group-, organization-, and community-level measures were rarely used. Discussion of the independence, validity, and reliability of measures was scant. Discussion Measurement issues may be especially complex when conducting multilevel intervention research. Measurement considerations that are associated with multilevel intervention research include those related to independence, reliability, validity, sample size, and power. Furthermore, multilevel intervention research requires identification of key constructs and measures by level and consideration of interactions within and across levels. Thus, multilevel intervention research benefits from thoughtful theory-driven planning and design, an interdisciplinary approach, and mixed methods measurement and analysis. PMID:22623598

  14. Local Network Wideband Interconnection Alternatives.

    DTIC Science & Technology

    1984-01-01

    greater than 1.5 Mbps and two standard televison channels. 1.1 SCOPE Interconnection of local area networks within the continental United States is...may influence : a. Media selection, b. Interface design, c. The use of the 1.5 Mbps data transmission capacity, and d. Adherence to the full-motion video

  15. Optical interconnection techniques for Hypercube

    NASA Technical Reports Server (NTRS)

    Johnston, A. R.; Bergman, L. A.; Wu, W. H.

    1988-01-01

    Direct free-space optical interconnection techniques are described for the Hypercube concurrent processor machine using a holographic optical element. Computational requirements and optical constraints on implementation are briefly summarized with regard to topology, power consumption, and available technologies. A hybrid lens/HOE approach is described that can support an eight-dimensional cube of 256 nodes.

  16. Solid oxide fuel cell with internal reforming, catalyzed interconnect for use therewith, and methods

    SciTech Connect

    Liu, Di-Jia; Guan, Jie; Minh, Nguyen

    2010-06-08

    A catalyzed interconnect for an SOFC electrically connects an anode and an anodic current collector and comprises a metallic substrate, which provides space between the anode and anodic current collector for fuel gas flow over at least a portion of the anode, and a catalytic coating on the metallic substrate comprising a catalyst for catalyzing hydrocarbon fuel in the fuel gas to hydrogen rich reformate. An SOFC including the catalyzed anodic inter-connect, a method for operating an SOFC, and a method for making a catalyzed anodic interconnect are also disclosed.

  17. Phase reactions at semiconductor metallization interfaces

    NASA Astrophysics Data System (ADS)

    Bhansali, A. S.; Ko, D. H.; Sinclair, R.

    1990-11-01

    During, or following, the fabrication of a microelectronic device, it is possible for the material phases at critical interfaces to react with one another, and so alter the elec-trical performance. This is particularly important for metallization contacts to semi-conductors and for multilevel interconnects. The present article shows that application of phase diagram principles can successfully predict the mutual stability or chemical reactivity in such circumstances. Since most relevant phase diagrams are not available, it is shown how they may be calculated from known thermochemical data, or deduced from observations on thin-film reactions. The article is illustrated by the behavior of titanium silicide with a diffusion barrier layer (TiN) and the surrounding dielectric SiO2. In addition the Al-Si-O-N and W-N-Ga-As systems are described, and metastable amor-phous phase formation at the Ti-Si interface is discussed.

  18. Recent developments in multilevel optimization

    NASA Technical Reports Server (NTRS)

    Vanderplaats, Garret N.; Kim, D.-S.

    1989-01-01

    Recent developments in multilevel optimization are briefly reviewed. The general nature of the multilevel design task, the use of approximations to develop and solve the analysis design task, the structure of the formal multidiscipline optimization problem, a simple cantilevered beam which demonstrates the concepts of multilevel design and the basic mathematical details of the optimization task and the system level are among the topics discussed.

  19. Modeling and experimental characterization of electromigration in interconnect trees

    NASA Astrophysics Data System (ADS)

    Thompson, C. V.; Hau-Riege, S. P.; Andleigh, V. K.

    1999-11-01

    Most modeling and experimental characterization of interconnect reliability is focussed on simple straight lines terminating at pads or vias. However, laid-out integrated circuits often have interconnects with junctions and wide-to-narrow transitions. In carrying out circuit-level reliability assessments it is important to be able to assess the reliability of these more complex shapes, generally referred to as `trees.' An interconnect tree consists of continuously connected high-conductivity metal within one layer of metallization. Trees terminate at diffusion barriers at vias and contacts, and, in the general case, can have more than one terminating branch when they include junctions. We have extended the understanding of `immortality' demonstrated and analyzed for straight stud-to-stud lines, to trees of arbitrary complexity. This leads to a hierarchical approach for identifying immortal trees for specific circuit layouts and models for operation. To complete a circuit-level-reliability analysis, it is also necessary to estimate the lifetimes of the mortal trees. We have developed simulation tools that allow modeling of stress evolution and failure in arbitrarily complex trees. We are testing our models and simulations through comparisons with experiments on simple trees, such as lines broken into two segments with different currents in each segment. Models, simulations and early experimental results on the reliability of interconnect trees are shown to be consistent.

  20. 47 CFR 64.1401 - Expanded interconnection.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... such equipment to connect interconnectors' fiber optic systems or microwave radio transmission... interconnectors' fiber optic systems or microwave radio transmission facilities (where reasonably feasible) with... interconnection of fiber optic facilities, local exchange carriers shall provide: (1) An interconnection point or...

  1. 47 CFR 64.1401 - Expanded interconnection.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... such equipment to connect interconnectors' fiber optic systems or microwave radio transmission... interconnectors' fiber optic systems or microwave radio transmission facilities (where reasonably feasible) with... interconnection of fiber optic facilities, local exchange carriers shall provide: (1) An interconnection point or...

  2. 47 CFR 64.1401 - Expanded interconnection.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... such equipment to connect interconnectors' fiber optic systems or microwave radio transmission... interconnectors' fiber optic systems or microwave radio transmission facilities (where reasonably feasible) with... interconnection of fiber optic facilities, local exchange carriers shall provide: (1) An interconnection point or...

  3. Process for making a multilayer interconnect system

    NASA Technical Reports Server (NTRS)

    Zachry, Clyde L. (Inventor); Niedzwiecke, Andrew J. (Inventor)

    1976-01-01

    A process for making an interconnect system for a multilayer circuit pattern. The interconnect system is formed having minimized through-hole space consumption so as to be suitable for high density, closely meshed circuit patterns.

  4. Interconnect mechanisms in microelectronic packaging

    NASA Astrophysics Data System (ADS)

    Roma, Maria Penafrancia C.

    Global economic, environmental and market developments caused major impact in the microelectronics industry. Astronomical rise of gold metal prices over the last decade shifted the use of copper and silver alloys as bonding wires. Environmental legislation on the restriction of the use of Pb launched worldwide search for lead-free solders and platings. Finally, electrical and digital uses demanded smaller, faster and cheaper devices. Ultra-fine pitch bonding, decreasing bond wire sizes and hard to bond substrates have put the once-robust stitch bond in the center of reliability issues due to stitch bond lift or open wires .Unlike the ball bond, stitch bonding does not lead to intermetallic compound formation but adhesion is dependent on mechanical deformation, interdiffusion, solid solution formation, void formation and mechanical interlocking depending on the wire material, bond configuration, substrate type , thickness and surface condition. Using Au standoff stitch bonds on NiPdAu plated substrates eliminated stitch bond lift even when the Au and Pd layers are reduced. Using the Matano-Boltzmann analysis on a STEM (Scanning Transmission Analysis) concentration profile the interdiffusion coefficient is measured to be 10-16 cm 2/s. Wire pull strength data showed that the wire pull strength is 0.062N and increases upon stress testing. Meanwhile, coating the Cu wire with Pd, not only increases oxidation resistance but also improved adhesion due to the formation of a unique interfacial adhesion layers. Adhesion strength as measured by pull showed the Cu wire bonded to Ag plated Cu substrate (0.132N) to be stronger than the Au wire bonded on the same substrate (0.124N). Ag stitch bonded to Au is predicted to be strong but surface modification made the adhesion stronger. However, on the Ag ball bonded to Al showed multiple IMC formation with unique morphology exposed by ion milling and backscattered scanning electron microscopy. Adding alloying elements in the Ag wire

  5. Formation of interconnections to microfluidic devices

    DOEpatents

    Matzke, Carolyn M [Los Lunas, NM; Ashby, Carol I. H. [Edgewood, NM; Griego, Leonardo [Tijeras, NM

    2003-07-29

    A method is disclosed to form external interconnections to a microfluidic device for coupling of a fluid or light or both into a microchannel of the device. This method can be used to form optical or fluidic interconnections to microchannels previously formed on a substrate, or to form both the interconnections and microchannels during the same process steps. The optical and fluidic interconnections are formed parallel to the plane of the substrate, and are fluid tight.

  6. 47 CFR 90.477 - Interconnected systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 47 Telecommunication 5 2014-10-01 2014-10-01 false Interconnected systems. 90.477 Section 90.477... MOBILE RADIO SERVICES Transmitter Control Interconnected Systems § 90.477 Interconnected systems. (a... operation. This restriction will not apply to trunked systems or on any channel assigned exclusively to one...

  7. 18 CFR 292.306 - Interconnection costs.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Interconnection costs... § 292.306 Interconnection costs. (a) Obligation to pay. Each qualifying facility shall be obligated to pay any interconnection costs which the State regulatory authority (with respect to any...

  8. Fast multilevel radiative transfer

    NASA Astrophysics Data System (ADS)

    Paletou, Frédéric; Léger, Ludovick

    2007-01-01

    The vast majority of recent advances in the field of numerical radiative transfer relies on approximate operator methods better known in astrophysics as Accelerated Lambda-Iteration (ALI). A superior class of iterative schemes, in term of rates of convergence, such as Gauss-Seidel and Successive Overrelaxation methods were therefore quite naturally introduced in the field of radiative transfer by Trujillo Bueno & Fabiani Bendicho (1995); it was thoroughly described for the non-LTE two-level atom case. We describe hereafter in details how such methods can be generalized when dealing with non-LTE unpolarised radiation transfer with multilevel atomic models, in monodimensional geometry.

  9. Interconnects for nanoscale MOSFET technology: a review

    NASA Astrophysics Data System (ADS)

    Chaudhry, Amit

    2013-06-01

    In this paper, a review of Cu/low-k, carbon nanotube (CNT), graphene nanoribbon (GNR) and optical based interconnect technologies has been done. Interconnect models, challenges and solutions have also been discussed. Of all the four technologies, CNT interconnects satisfy most of the challenges and they are most suited for nanometer scale technologies, despite some minor drawbacks. It is concluded that beyond 32 nm technology, a paradigm shift in the interconnect material is required as Cu/low-k interconnects are approaching fundamental limits.

  10. Flexible interconnects for fuel cell stacks

    DOEpatents

    Lenz, David J.; Chung, Brandon W.; Pham, Ai Quoc

    2004-11-09

    An interconnect that facilitates electrical connection and mechanical support with minimal mechanical stress for fuel cell stacks. The interconnects are flexible and provide mechanically robust fuel cell stacks with higher stack performance at lower cost. The flexible interconnects replace the prior rigid rib interconnects with flexible "fingers" or contact pads which will accommodate the imperfect flatness of the ceramic fuel cells. Also, the mechanical stress of stacked fuel cells will be smaller due to the flexibility of the fingers. The interconnects can be one-sided or double-sided.

  11. A Primer on Multilevel Modeling

    ERIC Educational Resources Information Center

    Hayes, Andrew F.

    2006-01-01

    Multilevel modeling (MLM) is growing in use throughout the social sciences. Although daunting from a mathematical perspective, MLM is relatively easy to employ once some basic concepts are understood. In this article, I present a primer on MLM, describing some of these principles and applying them to the analysis of a multilevel data set on…

  12. Omitted Variables in Multilevel Models

    ERIC Educational Resources Information Center

    Kim, Jee-Seon; Frees, Edward W.

    2006-01-01

    Statistical methodology for handling omitted variables is presented in a multilevel modeling framework. In many nonexperimental studies, the analyst may not have access to all requisite variables, and this omission may lead to biased estimates of model parameters. By exploiting the hierarchical nature of multilevel data, a battery of statistical…

  13. Multilevel Modeling of Social Segregation

    ERIC Educational Resources Information Center

    Leckie, George; Pillinger, Rebecca; Jones, Kelvyn; Goldstein, Harvey

    2012-01-01

    The traditional approach to measuring segregation is based upon descriptive, non-model-based indices. A recently proposed alternative is multilevel modeling. The authors further develop the argument for a multilevel modeling approach by first describing and expanding upon its notable advantages, which include an ability to model segregation at a…

  14. In-memory interconnect protocol configuration registers

    DOEpatents

    Cheng, Kevin Y.; Roberts, David A.

    2017-09-19

    Systems, apparatuses, and methods for moving the interconnect protocol configuration registers into the main memory space of a node. The region of memory used for storing the interconnect protocol configuration registers may also be made cacheable to reduce the latency of accesses to the interconnect protocol configuration registers. Interconnect protocol configuration registers which are used during a startup routine may be prefetched into the host's cache to make the startup routine more efficient. The interconnect protocol configuration registers for various interconnect protocols may include one or more of device capability tables, memory-side statistics (e.g., to support two-level memory data mapping decisions), advanced memory and interconnect features such as repair resources and routing tables, prefetching hints, error correcting code (ECC) bits, lists of device capabilities, set and store base address, capability, device ID, status, configuration, capabilities, and other settings.

  15. Chromium Vaporization Reduction by Nickel Coatings For SOEC Interconnect Materials

    SciTech Connect

    Michael V. Glazoff; Sergey N. Rashkeev; J. Stephen Herring

    2014-09-01

    The vaporization of Cr-rich volatile species from interconnect materials is a major source of degradation that limits the lifetime of planar solid oxide devices systems with metallic interconnects, including Solid Oxide Electrolysis Cells, or SOECs. Some metallic coatings (Ni, Co, and Cu) significantly reduce the Cr release from interconnects and slow down the oxide scale growth on the steel substrate. To shed additional light upon the mechanisms of such protection and find a suitable coating material for ferritic stainless steel materials, we used a combination of first-principles calculations, thermodynamics, and diffusion modeling to investigate which factors determine the quality of the Ni metallic coating at stainless steel interconnector. We found that the Cr migration in Ni coating is determined by a delicate combination of the nickel oxidation, Cr diffusion, and phase transformation processes. Although the formation of Cr2O3 oxide is more exothermic than that of NiO, the kinetic rate of the chromia formation in the coating layer and its surface is significantly reduced by the low mobility of Cr in nickel oxide and in NiCr2O4 spinel. These results are in a good agreement with diffusion modeling for Cr diffusion through Ni coating layer on the ferritic 441 steel substrate.

  16. 78 FR 29672 - Small Generator Interconnection Agreements and Procedures

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-21

    ... Energy Regulatory Commission 18 CFR Part 35 Small Generator Interconnection Agreements and Procedures... Generator Interconnection Procedures (SGIP) and pro forma Small Generator Interconnection Agreement (SGIA..., 2013, the Commission issued an order in the above- referenced docket. Small Generator Interconnection...

  17. Interconnects for intermediate temperature solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Huang, Wenhua

    Presently, one of the principal goals of solid oxide fuel cells (SOFCs) research is to reduce the stack operating temperature to between 600 and 800°C. However, one of the principal technological barriers is the non-availability of a suitable material satisfying all of the stability requirements for the interconnect. In this work two approaches for intermediate temperature SOFC interconnects have been explored. The first approach comprises an interconnect consisting of a bi-layer structure, a p-type oxide (La0.96Sr0.08MnO 2.001/LSM) layer exposed to a cathodic environment, and an n-type oxide (Y0.08Sr0.88Ti0.95Al0.05O 3-delta/YSTA) layer exposed to anodic conditions. Theoretical analysis based on the bi-layer structure has established design criteria to implement this approach. The analysis shows that the interfacial oxygen partial pressure, which determines the interconnect stability, is independent of the electronic conductivities of both layers but dependent on the oxygen ion layer interconnects, the oxygen ion conductivities of LSM and YSTA were measured as a function of temperature and oxygen partial pressure. Based on the measured data, it has been determined that if the thickness of YSTA layer is around 0.1cm, the thickness of LSM layer should be around 0.6 mum in order to maintain the stability of LSM. In a second approach, a less expensive stainless steel interconnect has been studied. However, one of the major concerns associated with the use of metallic interconnects is the development of a semi-conducting or insulating oxide scale and chromium volatility during extended exposure to the SOFC operating environment. Dense and well adhered Mn-Cu spinet oxide coatings were successfully deposited on stainless steel by an electrophoretic deposition (EPD) technique. It was found that the Mn-Cu-O coating significantly reduced the oxidation rate of the stainless steel and the volatility of chromium. The area specific resistance (ASR) of coated Crofer 22 APU is

  18. Analysis of vertical interconnection measurements

    NASA Astrophysics Data System (ADS)

    Karner, F. A.

    The paper examines the predominance of the effects that measurement points, geometries, and alignment have on the interpretation of measured values of contact resistance of vertical interconnections in multilayer electronic packages. It is concluded that: (1) four-terminal measurements for contact resistance are misleading; (2) measured values are mostly a function of structural geometry; (3) simulation in two dimensions and subsequent synthesis is a good predictor in three-dimensional simulations; (4) the dual-contact site is a good alignment aid and contact-resistance indicator; and (5) the measured resistance value should only be used as a reference, and not as an indicator of good or bad.

  19. Environmental toxicology: Interconnections between human ...

    EPA Pesticide Factsheets

    This presentation will discuss what has made a career in environmental toxicology rewarding, environmental and scientific challenges for the 21st century, paradigm shift in regulatory toxicology, adverse outcome framework, interconnections between human health and ecological integrity, SOT-SETAC Pellston Workshop findings, concepts for systems thinking in environmental toxicology The Eminent Toxicologist Lectures are historically relevant, high-quality presentations appropriate for senior undergraduate students, graduate students, or the scientifically oriented general public. This series of lectures is produced by the SOT Undergraduate Subcommittee of the Education Committee in conjunction with the Eminent Toxicologist Working Group.

  20. Environmental toxicology: Interconnections between human ...

    EPA Pesticide Factsheets

    This presentation will discuss what has made a career in environmental toxicology rewarding, environmental and scientific challenges for the 21st century, paradigm shift in regulatory toxicology, adverse outcome framework, interconnections between human health and ecological integrity, SOT-SETAC Pellston Workshop findings, concepts for systems thinking in environmental toxicology The Eminent Toxicologist Lectures are historically relevant, high-quality presentations appropriate for senior undergraduate students, graduate students, or the scientifically oriented general public. This series of lectures is produced by the SOT Undergraduate Subcommittee of the Education Committee in conjunction with the Eminent Toxicologist Working Group.

  1. Integration of germanium waveguide photodetectors for intrachip optical interconnects

    NASA Astrophysics Data System (ADS)

    Rouviere, Mathieu; Halbwax, Mathieu; Cercus, Jean-Luc; Cassan, Eric; Vivien, Laurent; Pascal, Daniel; Heitzmann, Michel; Hartmann, Jean-Michel; Laval, Suzanne

    2005-07-01

    The main characteristics of germanium photodetectors integrated in silicon-on-insulator optical waveguides for intrachip optical interconnects are presented. The epitaxial Ge layers are grown on Si(001) by reduced-pressure chemical vapor deposition. The optical absorption of Ge layers is recorded from 1.2 to 1.7 µm and linked to the layer strain. The responsivity of an interdigitated metal-semiconductor-metal Ge photodetector has been measured. Light coupling from a slightly etched submicron rib silicon-on-insulator waveguide to a Ge photodetector is studied for two configurations: butt coupling and vertical coupling.

  2. Optical imaging applied to microelectronic chip-to-chip interconnections.

    PubMed

    Kostuk, R K; Goodman, J W; Hesselink, L

    1985-09-01

    An imaging system is proposed as an alternative to metallized connections between integrated circuits. Power requirements for metallized interconnects and electrooptic links are compared. A holographic optical element is considered as the imaging device. Several experimental systems have been constructed which have visible LEDs as the transmitters and PIN photodiodes as the receivers. Signals are evaluated at different source-detector separations. Multiple exposure holograms are used as a means of optical fan out allowing one source to simultaneously address several receiver locations. Limitations of this technique are also discussed.

  3. A 1 GHz integrated circuit with carbon nanotube interconnects and silicon transistors.

    PubMed

    Close, Gael F; Yasuda, Shinichi; Paul, Bipul; Fujita, Shinobu; Wong, H-S Philip

    2008-02-01

    Due to their excellent electrical properties, metallic carbon nanotubes are promising materials for interconnect wires in future integrated circuits. Simulations have shown that the use of metallic carbon nanotube interconnects could yield more energy efficient and faster integrated circuits. The next step is to build an experimental prototype integrated circuit using carbon nanotube interconnects operating at high speed. Here, we report the fabrication of the first stand-alone integrated circuit combining silicon transistors and individual carbon nanotube interconnect wires on the same chip operating above 1 GHz. In addition to setting a milestone by operating above 1 GHz, this prototype is also a tool to investigate carbon nanotubes on a silicon-based platform at high frequencies, paving the way for future multi-GHz nanoelectronics.

  4. Thin-film chip-to-substrate interconnect and methods for making same

    DOEpatents

    Tuckerman, David B.

    1991-01-01

    Integrated circuit chips are electrically connected to a silica wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin metal lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability.

  5. AC Power Consumption of Single-Walled Carbon Nanotube Interconnects: Non-Equilibrium Green's Function Simulation

    NASA Astrophysics Data System (ADS)

    Yamamoto, Takahiro; Sasaoka, Kenji; Watanabe, Satoshi

    2012-04-01

    We theoretically investigate the emittance and dynamic dissipation of a nanoscale interconnect consisting of a metallic single-walled carbon nanotube using the non-equilibrium Green's function technique for AC electronic transport. We show that the emittance and dynamic dissipation depend strongly on the contact conditions of the interconnect and that the power consumption can be reduced by adjusting the contact conditions. We propose an appropriate condition of contact that yields a high power factor and low apparent power.

  6. Prosocial behavior: multilevel perspectives.

    PubMed

    Penner, Louis A; Dovidio, John F; Piliavin, Jane A; Schroeder, David A

    2005-01-01

    Current research on prosocial behavior covers a broad and diverse range of phenomena. We argue that this large research literature can be best organized and understood from a multilevel perspective. We identify three levels of analysis of prosocial behavior: (a) the "meso" level--the study of helper-recipient dyads in the context of a specific situation; (b) the micro level--the study of the origins of prosocial tendencies and the sources of variation in these tendencies; and (c) the macro level--the study of prosocial actions that occur within the context of groups and large organizations. We present research at each level and discuss similarities and differences across levels. Finally, we consider ways in which theory and research at these three levels of analysis might be combined in future intra- and interdisciplinary research on prosocial behavior.

  7. Parallel multilevel preconditioners

    SciTech Connect

    Bramble, J.H.; Pasciak, J.E.; Xu, Jinchao.

    1989-01-01

    In this paper, we shall report on some techniques for the development of preconditioners for the discrete systems which arise in the approximation of solutions to elliptic boundary value problems. Here we shall only state the resulting theorems. It has been demonstrated that preconditioned iteration techniques often lead to the most computationally effective algorithms for the solution of the large algebraic systems corresponding to boundary value problems in two and three dimensional Euclidean space. The use of preconditioned iteration will become even more important on computers with parallel architecture. This paper discusses an approach for developing completely parallel multilevel preconditioners. In order to illustrate the resulting algorithms, we shall describe the simplest application of the technique to a model elliptic problem.

  8. Multilevel DC link inverter

    DOEpatents

    Su, Gui-Jia

    2003-06-10

    A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

  9. Totally parallel multilevel algorithms

    NASA Technical Reports Server (NTRS)

    Frederickson, Paul O.

    1988-01-01

    Four totally parallel algorithms for the solution of a sparse linear system have common characteristics which become quite apparent when they are implemented on a highly parallel hypercube such as the CM2. These four algorithms are Parallel Superconvergent Multigrid (PSMG) of Frederickson and McBryan, Robust Multigrid (RMG) of Hackbusch, the FFT based Spectral Algorithm, and Parallel Cyclic Reduction. In fact, all four can be formulated as particular cases of the same totally parallel multilevel algorithm, which are referred to as TPMA. In certain cases the spectral radius of TPMA is zero, and it is recognized to be a direct algorithm. In many other cases the spectral radius, although not zero, is small enough that a single iteration per timestep keeps the local error within the required tolerance.

  10. Interconnect fatigue design for terrestrial photovoltaic modules

    NASA Technical Reports Server (NTRS)

    Mon, G. R.; Moore, D. M.; Ross, R. G., Jr.

    1982-01-01

    The results of comprehensive investigation of interconnect fatigue that has led to the definition of useful reliability-design and life-prediction algorithms are presented. Experimental data indicate that the classical strain-cycle (fatigue) curve for the interconnect material is a good model of mean interconnect fatigue performance, but it fails to account for the broad statistical scatter, which is critical to reliability prediction. To fill this shortcoming the classical fatigue curve is combined with experimental cumulative interconnect failure rate data to yield statistical fatigue curves (having failure probability as a parameter) which enable (1) the prediction of cumulative interconnect failures during the design life of an array field, and (2) the unambiguous--ie., quantitative--interpretation of data from field-service qualification (accelerated thermal cycling) tests. Optimal interconnect cost-reliability design algorithms are derived based on minimizing the cost of energy over the design life of the array field.

  11. Cantilevered multilevel LIGA devices and methods

    DOEpatents

    Morales, Alfredo Martin; Domeier, Linda A.

    2002-01-01

    In the formation of multilevel LIGA microstructures, a preformed sheet of photoresist material, such as polymethylmethacrylate (PMMA) is patterned by exposure through a mask to radiation, such as X-rays, and developed using a developer to remove the exposed photoresist material. A first microstructure is then formed by electroplating metal into the areas from which the photoresist has been removed. Additional levels of microstructure are added to the initial microstructure by covering the first microstructure with a conductive polymer, machining the conductive polymer layer to reveal the surface of the first microstructure, sealing the conductive polymer and surface of the first microstructure with a metal layer, and then forming the second level of structure on top of the first level structure. In such a manner, multiple layers of microstructure can be built up to allow complex cantilevered microstructures to be formed.

  12. Role of Stress-Driven Interfacial Instability in the Failure of Confined Electric Interconnects

    NASA Astrophysics Data System (ADS)

    Wang, Nan; Provatas, Nikolas

    2017-02-01

    We examine the possible role of stress-driven surface instability in the failure of electric interconnects found in large-scale integrated circuits. While electromigration is commonly known as the main reason behind interconnect failure, the complex interplay of electromigration-induced mass transport and stress-induced transport has also been studied extensively since the discovery of the Blech effect due to its importance in integrated-circuit design. However, the role of the dielectric medium confining the interconnect has not been properly included in previous analysis of this phenomenon. Here, we examine the classic ATG instability in the presence of dielectric confinement. We propose that thermal stress and surface transport, typically active in all metal interconnects, may trigger a surface instability at the metal-dielectric interface. In particular, we show that there exists a critical thermal stress level below which the stress-driven surface instability cannot be responsible for the failure of interconnects of any length. However, for an interconnect confined by soft low-k dielectric materials, thermal stresses can still be large enough that such stress-driven instability may break the metal conductor even if its length is below the Blech limit.

  13. Cascade solar cell having conductive interconnects

    DOEpatents

    Borden, Peter G.; Saxena, Ram R.

    1982-10-26

    Direct ohmic contact between the cells in an epitaxially grown cascade solar cell is obtained by means of conductive interconnects formed through grooves etched intermittently in the upper cell. The base of the upper cell is directly connected by the conductive interconnects to the emitter of the bottom cell. The conductive interconnects preferably terminate on a ledge formed in the base of the upper cell.

  14. Progress toward optical interconnects for intrachip global communication

    NASA Astrophysics Data System (ADS)

    Haney, Michael W.; Iqbal, Muzammil; McFadden, Michael J.; Dillon, Thomas; Prather, Dennis W.

    2006-02-01

    Microprocessor performance is now limited by the poor delay and bandwidth performance of the on-chip global wiring layers. Although relatively few in number, the global metal wires have proven to be the primary cause of performance limitations - effectively leading to a premature saturation of Moore's Law scaling in future Silicon generations. Building upon device-, circuit-, system- and architectural-level models, a framework for performance evaluation of global wires is developed aimed at quantifying the major challenges faced by intrachip global communications over the span of six technology generations. This paper reviews the status of possible intra-chip optical interconnect solutions in which the Silicon chip's global metal wiring layers are replaced with a high-density guided-wave or free-space optical interconnection fabric. The overall goal is to provide a scalable approach that is compatible with established silicon chip fabrication and packaging technology, and which can extend the reach of Moore's Law for many generations to come. To achieve the required densities, the integrated sources are envisioned to be modulators that are optically powered by off-chip sources. Structures for coupling dense modulator arrays to optical power sources and to free-space or guide-wave optical global fabrics are analyzed. Results of proof-of-concept experiments, which demonstrate the potential benefits of ultra-high-density optical interconnection fabrics for intra-chip global communications, are presented.

  15. Visualizing interconnections among climate risks

    NASA Astrophysics Data System (ADS)

    Tanaka, K.; Yokohata, T.; Nishina, K.; Takahashi, K.; Emori, S.; Kiguchi, M.; Iseri, Y.; Honda, Y.; Okada, M.; Masaki, Y.; Yamamoto, A.; Shigemitsu, M.; Yoshimori, M.; Sueyoshi, T.; Hanasaki, N.; Ito, A.; Sakurai, G.; Iizumi, T.; Nishimori, M.; Lim, W. H.; Miyazaki, C.; Kanae, S.; Oki, T.

    2015-12-01

    It is now widely recognized that climate change is affecting various sectors of the world. Climate change impact on one sector may spread out to other sectors including those seemingly remote, which we call "interconnections of climate risks". While a number of climate risks have been identified in the Intergovernmental Panel on Climate Change (IPCC) Fifth Assessment Report (AR5), there has been no attempt to explore their interconnections comprehensively. Here we present a first and most exhaustive visualization of climate risks drawn based on a systematic literature survey. Our risk network diagrams depict that changes in the climate system impact natural capitals (terrestrial water, crop, and agricultural land) as well as social infrastructures, influencing the socio-economic system and ultimately our access to food, water, and energy. Our findings suggest the importance of incorporating climate risk interconnections into impact and vulnerability assessments and call into question the widely used damage function approaches, which address a limited number of climate change impacts in isolation. Furthermore, the diagram is useful to educate decision makers, stakeholders, and general public about cascading risks that can be triggered by the climate change. Socio-economic activities today are becoming increasingly more inter-dependent because of the rapid technological progress, urbanization, and the globalization among others. Equally complex is the ecosystem that is susceptible to climate change, which comprises interwoven processes affecting one another. In the context of climate change, a number of climate risks have been identified and classified according to regions and sectors. These reports, however, did not fully address the inter-relations among risks because of the complexity inherent in this issue. Climate risks may ripple through sectors in the present inter-dependent world, posing a challenge ahead of us to maintain the resilience of the system. It is

  16. Multilevel Algorithms for Nonlinear Optimization

    DTIC Science & Technology

    1994-06-01

    NASA Contractor Report 194940 ICASE Report No. 94-53 AD-A284 318 * ICASE MULTILEVEL ALGORITHMSDDTIC FOR NONLINEAR OPTIMIZATION ELECTESEP 1 4 1994 F...Association SOperated b MULTILEVEL ALGORITHMS FOR NONLINEAR OPTIMIZATION Natalia Alexandrov Accesion For ICASE C Mail Stop 132C NTIS CRA&ID C TAB 1Q...ABSTRACT Multidisciplinary design optimization (MDO) gives rise to nonlinear optimization problems characterized by a large number of constraints that

  17. Strain measurements in aluminum interconnects by x-ray microdiffraction

    NASA Astrophysics Data System (ADS)

    Hwang, Keith J.

    2000-10-01

    Reliability of metal interconnects in integrated circuits is a major concern to the microelectronics industry. Understanding the impact of stress and strain in metal lines is crucial for improving their reliability. Because of thermal expansion mismatches between the interconnect, substrate, and passivation material, high tensile stresses are developed during processing. In addition, stress gradients develop due to electromigration because of the high current densities passing through the lines. X-ray diffraction is an ideal technique for directly measuring these stresses. However, most of the earlier measurements were performed using millimeter size x-ray beams, allowing only macroscopic determinations of stress. Spatially resolved measurements of stresses in interconnects were not possible. A synchrotron-based white beam x-ray microdiffraction technique was developed and applied for localized strain mapping on polycrystalline thin film interconnects. The system was shown to achieve micron-scale spatial resolution and strain sensitivities on the order of 2 x 10-4. Two methods for performing in-situ calibration of the detector angles utilizing the (001) silicon substrate were presented: the energy method and the interplanar angle method. Various (hkl) reflections were measured from the (001) silicon substrate and the displacement of the x-ray beam was determined. Although discrepancies arose between these methods, both proved satisfactory to correct the Al (hkl) d-spacing measurements. Thermal and electromigration-induced hydrostatic stress distributions in a 2.6 mum wide passivated A1 line were investigated. The Al line exhibited thermal stress behavior consistent with confinement by the silicon/silicon dioxide interface. The electromigration-induced stress evolution indicated the presence of bamboo grains acting as blocking boundaries.

  18. Microtexture of Strain in electroplated copper interconnects

    SciTech Connect

    Spolenak, R.; Barr, D.L.; Gross, M.E.; Evans-Lutterodt, K.; Brown, W.L.; Tamura, N.; MacDowell, A.A.; Celestre, R.S.; Padmore, H.A.; Valek, B.C.; Bravman, J.C.; Flinn, P.; Marieb, T.; Keller, R.R.; Batterman, B.W.; Patel, J.R.

    2001-04-01

    The microstructure of narrow metal conductors in the electrical interconnections on IC chips has often been identified as of major importance in the reliability of these devices. The stresses and stress gradients that develop in the conductors as a result of thermal expansion differences in the materials and of electromigration at high current densities are believed to be strongly dependent on the details of the grain structure. The present work discusses new techniques based on microbeam x-ray diffraction (MBXRD) that have enabled measurement not only of the microstructure of totally encapsulated conductors but also of the local stresses in them on a micron and submicron scale. White x-rays from the Advanced Light Source were focused to a micron spot size by Kirkpatrick-Baez mirrors. The sample was stepped under the micro-beam and Laue images obtained at each sample location using a CCD area detector. Microstructure and local strain were deduced from these images. Cu lines with widths ranging from 0.8 mm to 5 mm and thickness of 1 mm were investigated. Comparisons are made between the capabilities of MBXRD and the well established techniques of broad beam XRD, electron back scatter diffraction (EBSD) and focused ion beam imagining (FIB).

  19. Thin-film chip-to-substrate interconnect and methods for making same

    DOEpatents

    Tuckerman, D.B.

    1988-06-06

    Integrated circuit chips are electrically connected to a silicon wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability. 6 figs.

  20. 47 CFR 90.477 - Interconnected systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ...) Applicants for new land stations to be interconnected with the public switched telephone network must... switched telephone network only after modifying their license. See § 1.929 of this chapter. In all cases a..., 896-901 MHz, and 935-940 MHz, interconnection with the public switched telephone network is...

  1. High density interconnects for aerospace applications

    NASA Astrophysics Data System (ADS)

    Menozzi, Gaetan

    1988-08-01

    The technologies of large scale interconnectors were evaluated for chip and wire or leadless ceramic chip carriers. The packaging and interconnecting structures are either ceramic multilayer with multilayer thick film and cofired multilayer ceramic. Test results are given, technology status and next generation interconnects are described, and aerospace applications are presented.

  2. Interconnections in ULSI: Correlation and Crosstalk

    DTIC Science & Technology

    1992-12-31

    cide interconnects. Finally. in Section V. we present the 2L conclusions. -_-. - ax, II. THEORY + A"- a- ) A. Coupling Between Optical Interconnects - To... TesIs . Note that the circulating urrent pattems hardly carry any net current in the x.direction. Therefore, the conductance of the stmctue will be very

  3. 14 CFR 23.701 - Flap interconnection.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Flap interconnection. 23.701 Section 23.701 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS... Systems § 23.701 Flap interconnection. (a) The main wing flaps and related movable surfaces as a...

  4. Government Open Systems Interconnection: Profile in Progress.

    ERIC Educational Resources Information Center

    Mills, Kevin L.

    1990-01-01

    Describes the emergence of Open Systems Interconnection (OSI) as it relates to the U.S. Government Open Systems Interconnection Profile (GOSIP); defines GOSIP; and speculates about its future. Challenges facing GOSIP that are related to test policies and procedures, strategic and tactical planning, additional functionality, and international…

  5. 14 CFR 29.674 - Interconnected controls.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Interconnected controls. 29.674 Section 29... AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Design and Construction Control Systems § 29.674 Interconnected controls. Each primary flight control system must provide for safe flight and landing and operate...

  6. 14 CFR 27.674 - Interconnected controls.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Interconnected controls. 27.674 Section 27... AIRWORTHINESS STANDARDS: NORMAL CATEGORY ROTORCRAFT Design and Construction Control Systems § 27.674 Interconnected controls. Each primary flight control system must provide for safe flight and landing and operate...

  7. 47 CFR 101.519 - Interconnection.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Interconnection. 101.519 Section 101.519 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES FIXED MICROWAVE SERVICES 24 GHz Service and Digital Electronic Message Service § 101.519 Interconnection. (a) All...

  8. Updating Technical Screens for PV Interconnection: Preprint

    SciTech Connect

    Coddington, M.; Ellis, A.; Lynn, K.; Razon, A.; Key, T.; Kroposki, B.; Mather, B.; Hill, R.; Nicole, K.; Smith, J.

    2012-08-01

    Solar photovoltaics (PV) is the dominant type of distributed generation (DG) technology interconnected to electric distribution systems in the United States, and deployment of PV systems continues to increase rapidly. Considering the rapid growth and widespread deployment of PV systems in United States electric distribution grids, it is important that interconnection procedures be as streamlined as possible to avoid unnecessary interconnection studies, costs, and delays. Because many PV interconnection applications involve high penetration scenarios, the process needs to allow for a sufficiently rigorous technical evaluation to identify and address possible system impacts. Existing interconnection procedures are designed to balance the need for efficiency and technical rigor for all DG. However, there is an implicit expectation that those procedures will be updated over time in order to remain relevant with respect to evolving standards, technology, and practical experience. Modifications to interconnection screens and procedures must focus on maintaining or improving safety and reliability, as well as accurately allocating costs and improving expediency of the interconnection process. This paper evaluates the origins and usefulness of the capacity penetration screen, offers potential short-term solutions which could effectively allow fast-track interconnection to many PV system applications, and considers longer-term solutions for increasing PV deployment levels in a safe and reliable manner while reducing or eliminating the emphasis on the penetration screen.

  9. Interconnections For Stacked Parallel Computer Modules

    NASA Technical Reports Server (NTRS)

    Johannesson, Richard T.

    1996-01-01

    Concept for interconnecting modules in parallel computers leads to cheaper, smaller, lighter, lower-power computing systems for aerospace, industrial, business, and consumer applications. Computer modules stacked and interconnected in various configurations. Connections among stacks controlled by switching within gateways and/or by addresses on buses.

  10. 47 CFR 101.519 - Interconnection.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 47 Telecommunication 5 2014-10-01 2014-10-01 false Interconnection. 101.519 Section 101.519 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES FIXED MICROWAVE SERVICES 24 GHz Service and Digital Electronic Message Service § 101.519 Interconnection. (a) All...

  11. 47 CFR 101.519 - Interconnection.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 5 2011-10-01 2011-10-01 false Interconnection. 101.519 Section 101.519 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES FIXED MICROWAVE SERVICES 24 GHz Service and Digital Electronic Message Service § 101.519 Interconnection. (a) All...

  12. 47 CFR 101.519 - Interconnection.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 47 Telecommunication 5 2013-10-01 2013-10-01 false Interconnection. 101.519 Section 101.519 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES FIXED MICROWAVE SERVICES 24 GHz Service and Digital Electronic Message Service § 101.519 Interconnection. (a) All...

  13. 47 CFR 101.519 - Interconnection.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 47 Telecommunication 5 2012-10-01 2012-10-01 false Interconnection. 101.519 Section 101.519 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES FIXED MICROWAVE SERVICES 24 GHz Service and Digital Electronic Message Service § 101.519 Interconnection. (a) All...

  14. Interconnect fatigue design for terrestrial photovoltaic modules

    SciTech Connect

    Mon, G. R.; Moore, D. M.; Ross, Jr., R. G.

    1982-03-01

    Fatigue of solar cell electrical interconnects due to thermal cycling has historically been a major failure mechanism in photovoltaic arrays; the results of a comprehensive investigation of interconnect fatigue that has led to the definition of useful reliability-design and life-prediction algorithms are presented. Experimental data gathered in this study indicate that the classical strain-cycle (fatigue) curve for the interconnect material is a good model of mean interconnect fatigue performance, but it fails to account for the broad statistical scatter, which is critical to reliability prediction. To fill this shortcoming the classical fatigue curve is combined with experimental cumulative interconnect failure rate data to yield statistical fatigue curves (having failure probability as a parameter) which enable: (1) the prediction of cumulative interconnect failures during the design life of an array field; and (2) the unambiguous - i.e., quantitative - interpretation of data from field-service qualification (accelerated thermal cycling) tests. Optimal interconnect cost-reliability design algorithms are derived based on minimizing the cost of energy over the design life of the array field. This procedure yields not only the minimum break-even cost of delivered energy, but also the required degree of interconnect redundancy and an estimate of array power degradation during the design life of the array field. The usefulness of the design algorithms is demonstrated with realistic examples of design optimization, prediction, and service qualification testing.

  15. Metallization failures

    NASA Technical Reports Server (NTRS)

    Beatty, R.

    1971-01-01

    Metallization-related failure mechanisms were shown to be a major cause of integrated circuit failures under accelerated stress conditions, as well as in actual use under field operation. The integrated circuit industry is aware of the problem and is attempting to solve it in one of two ways: (1) better understanding of the aluminum system, which is the most widely used metallization material for silicon integrated circuits both as a single level and multilevel metallization, or (2) evaluating alternative metal systems. Aluminum metallization offers many advantages, but also has limitations particularly at elevated temperatures and high current densities. As an alternative, multilayer systems of the general form, silicon device-metal-inorganic insulator-metal, are being considered to produce large scale integrated arrays. The merits and restrictions of metallization systems in current usage and systems under development are defined.

  16. Multilevel turbulence simulations

    SciTech Connect

    Tziperman, E.

    1994-12-31

    The authors propose a novel method for the simulation of turbulent flows, that is motivated by and based on the Multigrid (MG) formalism. The method, called Multilevel Turbulence Simulations (MTS), is potentially more efficient and more accurate than LES. In many physical problems one is interested in the effects of the small scales on the larger ones, or in a typical realization of the flow, and not in the detailed time history of each small scale feature. MTS takes advantage of the fact that the detailed simulation of small scales is not needed at all times, in order to make the calculation significantly more efficient, while accurately accounting for the effects of the small scales on the larger scale of interest. In MTS, models of several resolutions are used to represent the turbulent flow. The model equations in each coarse level incorporate a closure term roughly corresponding to the tau correction in the MG formalism that accounts for the effects of the unresolvable scales on that grid. The finer resolution grids are used only a small portion of the simulation time in order to evaluate the closure terms for the coarser grids, while the coarse resolution grids are then used to accurately and efficiently calculate the evolution of the larger scales. The methods efficiency relative to direct simulations is of the order of the ratio of required integration time to the smallest eddies turnover time, potentially resulting in orders of magnitude improvement for a large class of turbulence problems.

  17. Stretchable multilayer self-aligned interconnects fabricated using excimer laser photoablation and in situ masking

    NASA Astrophysics Data System (ADS)

    Lin, Kevin L.; Jain, Kanti

    2009-02-01

    Stretchable interconnects are essential to large-area flexible circuits and large-area sensor array systems, and they play an important role towards the realization of the realm of systems which include wearable electronics, sensor arrays for structural health monitoring, and sensor skins for tactile feedback. These interconnects must be reliable and robust for viability, and must be flexible, stretchable, and conformable to non-planar surfaces. This research describes the design, modeling, fabrication, and testing of stretchable interconnects on polymer substrates using metal patterns both as functional interconnect layers and as in-situ masks for excimer laser photoablation. Excimer laser photoablation is often used for patterning of polymers and thin-film metals. The fluences for photoablation of polymers are generally much lower than the threshold fluence for removal or damage of high-thermallyconductive metals; thus, metal thin films can be used as in-situ masks for polymers if the proper fluence is used. Selfaligned single-layer and multi-layer interconnects of various designs (rectilinear and 'meandering') have been fabricated, and certain 'meandering' interconnect designs can be stretched up to 50% uniaxially while maintaining good electrical conductivity and structural integrity. These results are compared with Finite Element Analysis (FEA) models and are observed to be in good accordance with them. This fabrication approach eliminates masks and microfabrication processing steps as compared to traditional fabrication approaches; furthermore, this technology is scalable for large-area sensor arrays and electronic circuits, adaptable for a variety of materials and interconnects designs, and compatible with MEMS-based capacitive sensor technology.

  18. Challenges of evaluating multilevel interventions.

    PubMed

    Nastasi, Bonnie K; Hitchcock, John

    2009-06-01

    This article uses the Comprehensive Mixed-Methods Participatory Evaluation (CMMPE; Nastasi and Hitchcock Transforming school mental health services: Population-based approaches to promoting the competency and wellness of children, Thousand Oaks, CA: Corwin Press with National Association of School Psychologists 2008; Nastasi et al. School-based mental health services: creating comprehensive and culturally specific programs. Washington, DC: American Psychological Association 2004) model as a framework for addressing the multiplicity of evaluation decisions and complex nature of questions related to program success in multilevel interventions. CMMPE defines program success in terms of acceptability, integrity, social or cultural validity, outcomes (impact), sustainability and institutionalization, thus broadening the traditional notions of program outcomes. The authors use CMMPE and an example of a community-based multilevel sexual risk prevention program with multiple outcomes to discuss challenges of evaluating multilevel interventions. The sexual risk program exemplifies what Schensul and Trickett (this issue) characterize as multilevel intervention-multilevel evaluation (M-M), with both intervention and evaluation at community, health practitioner, and patient levels. The illustration provides the context for considering several challenges related to M-M designs: feasibility of randomized controlled trials within community-based multilevel intervention; acceptability and social or cultural validity of evaluation procedures; implementer, recipient, and contextual variations in program success; interactions among levels of the intervention; unanticipated changes or conditions; multiple indicators of program success; engaging multiple stakeholders in a participatory process; and evaluating sustainability and institutionalization. The complexity of multilevel intervention and evaluation designs challenges traditional notions of evaluation research and experimental

  19. Statistical Analysis of Electromigration in Cu Interconnects With Multi-link Test Structures

    SciTech Connect

    Justison, P.; Kawasaki, H.; Gall, M.; Thrasher, S.; Hauschildt, M.; Hernandez, R.; Capasso, C.; Ho, P.S.

    2004-12-08

    The continual downward scaling of devices and increases in drive current have required an ever shrinking interconnect pitch and higher current densities. In order to overcome both the higher signal delay, as well as reliability concerns, new metallization technologies like Cu interconnects and low-k interlevel dielectrics have been developed. The implementation of inlaid Cu interconnects introduces a new set of material systems and geometries which results in new mass transport and failure mechanisms under electromigration. This study focuses on the characterization and understanding of electromigration-induced failures in advanced, 0.13 {mu}m technology node Cu interconnects. Statistically based methodologies, using multi-link test structures, were developed and used to further understand the reliability of these advanced interconnects. Single-inlaid structures designed to test both the upper and lower interfaces associated with a Cu via were used to understand the role of void formation and interconnect geometry in EM behavior. These statistical methodologies were also applied to EM tests on dual-inlaid test structures in order to understand the impact of a continuous via-metal connection on void formation including the potential for multiple failure modes. Dual-inlaid integrations of varying maturity levels were examined to highlight the advantages of the statistically based methodology in determining extrinsic failure modes as well as increasing the confidence of EM lifetime prediction.

  20. Large data centers interconnect bottlenecks.

    PubMed

    Ghiasi, Ali

    2015-02-09

    Large data centers interconnect bottlenecks are dominated by the switch I/O BW and the front panel BW as a result of pluggable modules. To overcome the front panel BW and the switch ASIC BW limitation one approach is to either move the optics onto the mid-plan or integrate the optics into the switch ASIC. Over the last 4 years, VCSEL based optical engines have been integrated into the packages of large-scale HPC routers, moderate size Ethernet switches, and even FPGA's. Competing solutions based on Silicon Photonics (SiP) have also been proposed for integration into HPC and Ethernet switch packages but with better integration path through the use of TSV (Through Silicon Via) stack dies. Integrating either VCSEL or SiP based optical engines into complex ASIC package that operates at high temperatures, where the required reliability is not trivial, one should ask what is the technical or the economic advantage before embarking on such a complex integration. High density Ethernet switches addressing data centers currently in development are based on 25G NRZ signaling and QSFP28 optical module that can support up to 3.6 Tb of front panel bandwidth.

  1. Method to Determine Maximum Allowable Sinterable Silver Interconnect Size

    SciTech Connect

    Wereszczak, A. A.; Modugno, M. C.; Waters, S. B.; DeVoto, D. J.; Paret, P. P.

    2016-05-01

    The use of sintered-silver for large-area interconnection is attractive for some large-area bonding applications in power electronics such as the bonding of metal-clad, electrically-insulating substrates to heat sinks. Arrays of different pad sizes and pad shapes have been considered for such large area bonding; however, rather than arbitrarily choosing their size, it is desirable to use the largest size possible where the onset of interconnect delamination does not occur. If that is achieved, then sintered-silver's high thermal and electrical conductivities can be fully taken advantage of. Toward achieving this, a simple and inexpensive proof test is described to identify the largest achievable interconnect size with sinterable silver. The method's objective is to purposely initiate failure or delamination. Copper and invar (a ferrous-nickel alloy whose coefficient of thermal expansion (CTE) is similar to that of silicon or silicon carbide) disks were used in this study and sinterable silver was used to bond them. As a consequence of the method's execution, delamination occurred in some samples during cooling from the 250 degrees C sintering temperature to room temperature and bonding temperature and from thermal cycling in others. These occurrences and their interpretations highlight the method's utility, and the herein described results are used to speculate how sintered-silver bonding will work with other material combinations.

  2. Chip-Level Electromigration Reliability for Cu Interconnects

    SciTech Connect

    Gall, M.; Oh, C.; Grinshpon, A.; Zolotov, V.; Panda, R.; Demircan, E.; Mueller, J.; Justison, P.; Ramakrishna, K.; Thrasher, S.; Hernandez, R.; Herrick, M.; Fox, R.; Boeck, B.; Kawasaki, H.; Haznedar, H.; Ku, P.

    2004-12-08

    Even after the successful introduction of Cu-based metallization, the electromigration (EM) failure risk has remained one of the most important reliability concerns for most advanced process technologies. Ever increasing operating current densities and the introduction of low-k materials in the backend process scheme are some of the issues that threaten reliable, long-term operation at elevated temperatures. The traditional method of verifying EM reliability only through current density limit checks is proving to be inadequate in general, or quite expensive at the best. A Statistical EM Budgeting (SEB) methodology has been proposed to assess more realistic chip-level EM reliability from the complex statistical distribution of currents in a chip. To be valuable, this approach requires accurate estimation of currents for all interconnect segments in a chip. However, no efficient technique to manage the complexity of such a task for very large chip designs is known. We present an efficient method to estimate currents exhaustively for all interconnects in a chip. The proposed method uses pre-characterization of cells and macros, and steps to identify and filter out symmetrically bi-directional interconnects. We illustrate the strength of the proposed approach using a high-performance microprocessor design for embedded applications as a case study.

  3. EPRI PEAC Corp.: Certification Model Program and Interconnection Agreement Tools

    SciTech Connect

    Not Available

    2003-10-01

    Summarizes the work of EPRI PEAC Corp., under contract to DOE's Distribution and Interconnection R&D, to develop a certification model program and interconnection agreement tools to support the interconnection of distributed energy resources.

  4. Multilevel phase gratings for array illuminators.

    PubMed

    Arrizón, V; Ojeda-Castañeda, J

    1994-09-01

    We describe a variety of multilevel phase structures that can be used to generate Lohmann's array illuminators. We report several experimental verifications of the synthesis of such multilevel phase structures by using simple binary curves in a conventional optical processor.

  5. Partial Synchronization of Interconnected Boolean Networks.

    PubMed

    Chen, Hongwei; Liang, Jinling; Lu, Jianquan

    2017-01-01

    This paper addresses the partial synchronization problem for the interconnected Boolean networks (BNs) via the semi-tensor product (STP) of matrices. First, based on an algebraic state space representation of BNs, a necessary and sufficient criterion is presented to ensure the partial synchronization of the interconnected BNs. Second, by defining an induced digraph of the partial synchronized states set, an equivalent graphical description for the partial synchronization of the interconnected BNs is established. Consequently, the second partial synchronization criterion is derived in terms of adjacency matrix of the induced digraph. Finally, two examples (including an epigenetic model) are provided to illustrate the efficiency of the obtained results.

  6. Optical Backplane Interconnect Technology (OBIT)

    NASA Technical Reports Server (NTRS)

    Hammer, J. M.

    1988-01-01

    We describe and analyze a novel approach to implementing an Optical Backplane Interconnect Technology (OBIT) that is capable of optically connecting any row of a 32x32 backplane array to any row of a second 32x32 array. Each backplane array is formed monolithically on a wafer. The technology is based on the use of Grating Surface Emitting (GSE) waveguides formed on a wafer containing quantum-well and separate confinement waveguide layers. These layers are used for transverse guiding, gain, modulation, detection, and for the formation of wavelength tunable distributed-Bragg reflector lasers. The required surface structures are formed photolithographically. The GSE waveguides act as efficient antennae that radiate light at angles selected by tuning the wavelength of the lasers. The same waveguides may be used as the receiving antennae when the array is used in the receiving mode. Thus, wavelength tuning is used to direct each row of the transmitting array to the desired row of the receiving array. In summary: The optical backplane array will have the following characteristics: Any row of a 32x32 GSE array may be optically connected to any row of a second 32x32 array. Only one switch decision is required to switch 32 parallel connections to any one of 32 positions. Each monolithic array can be used as both transmitter and receiver by switching the bias on the quantum-well switch-detectors. Separate transmitting and receiving structures could be provided for duplex operation. For a bit error rate of 10 sup 9 at 100-MHz data rate, a required laser power of 12 mW is calculated based on an estimated total optical loss of 40 dB.

  7. Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

    NASA Technical Reports Server (NTRS)

    Routh, D. E.; Sharma, G. C. (Inventor)

    1984-01-01

    An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device.

  8. Method for fabricating an interconnected array of semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1989-10-10

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  9. A General Multilevel SEM Framework for Assessing Multilevel Mediation

    ERIC Educational Resources Information Center

    Preacher, Kristopher J.; Zyphur, Michael J.; Zhang, Zhen

    2010-01-01

    Several methods for testing mediation hypotheses with 2-level nested data have been proposed by researchers using a multilevel modeling (MLM) paradigm. However, these MLM approaches do not accommodate mediation pathways with Level-2 outcomes and may produce conflated estimates of between- and within-level components of indirect effects. Moreover,…

  10. A General Multilevel SEM Framework for Assessing Multilevel Mediation

    ERIC Educational Resources Information Center

    Preacher, Kristopher J.; Zyphur, Michael J.; Zhang, Zhen

    2010-01-01

    Several methods for testing mediation hypotheses with 2-level nested data have been proposed by researchers using a multilevel modeling (MLM) paradigm. However, these MLM approaches do not accommodate mediation pathways with Level-2 outcomes and may produce conflated estimates of between- and within-level components of indirect effects. Moreover,…

  11. Hybrid silicon evanescent approach to optical interconnects

    NASA Astrophysics Data System (ADS)

    Liang, Di; Fang, Alexander W.; Chen, Hui-Wen; Sysak, Matthew N.; Koch, Brian R.; Lively, Erica; Raday, Omri; Kuo, Ying-Hao; Jones, Richard; Bowers, John E.

    2009-06-01

    We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III-V materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light sources. For the external signal processing, Mach-Zehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited, 3 dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5 V mm. The successful implementation of quantum well intermixing technique opens up the possibility to realize multiple III-V bandgaps in this platform. Sampled grating DBR devices integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM regions are 1520, 1440 and 1480 nm, respectively. The high-temperature operation characteristics of the HSEP are studied experimentally and theoretically. An overall characteristic temperature ( T 0) of 51°C, an above threshold characteristic temperature ( T 1) of 100°C, and a thermal impedance ( Z T ) of 41.8°C/W, which agrees with the theoretical prediction of 43.5°C/W, are extracted from the Fabry-Perot devices. Scaling this platform to larger dimensions is demonstrated up to 150 mm wafer diameter. A vertical outgassing channel design is developed to accomplish high-quality III-V epitaxial transfer to silicon in a timely and dimension-independent fashion.

  12. Epidemics in Interconnected Small-World Networks

    PubMed Central

    Liu, Meng; Li, Daqing; Qin, Pengju; Liu, Chaoran; Wang, Huijuan; Wang, Feilong

    2015-01-01

    Networks can be used to describe the interconnections among individuals, which play an important role in the spread of disease. Although the small-world effect has been found to have a significant impact on epidemics in single networks, the small-world effect on epidemics in interconnected networks has rarely been considered. Here, we study the susceptible-infected-susceptible (SIS) model of epidemic spreading in a system comprising two interconnected small-world networks. We find that the epidemic threshold in such networks decreases when the rewiring probability of the component small-world networks increases. When the infection rate is low, the rewiring probability affects the global steady-state infection density, whereas when the infection rate is high, the infection density is insensitive to the rewiring probability. Moreover, epidemics in interconnected small-world networks are found to spread at different velocities that depend on the rewiring probability. PMID:25799143

  13. INTERCONNECTIONS BETWEEN HUMAN HEALTH AND ECOLOGICAL INTEGRITY

    EPA Science Inventory

    Interconnections between Human Health and Ecological Integrity emanates from a June 2000 Pellston Workshop in Snowbird, Utah, USA. Jointly sponsored by the Society of Environmental Toxicology and Chemistry (SETAC) and the Society of Toxicology (SOT), the workshop was motivated by...

  14. Implementation of optical interconnections for VLSI

    NASA Technical Reports Server (NTRS)

    Wu, Wennie H.; Bergman, Larry A.; Johnston, Alan R.; Guest, Clark C.; Esener, Sadik C.

    1987-01-01

    This paper reports on the progress in implementing optical interconnections for VLSI. Four areas are covered: (1) the holographic optical element (HOE), (2) the laser sources, (3) the detectors and associated circuits forming an optically addressed gate, and (4) interconnection experiments in which five gates are actuated from one source. A laser scanner system with a resolution of 12 x 20 microns has been utilized to generate the HOEs. Diffraction efficiency of the HOE and diffracted spot size have been measured. Stock lasers have been modified with a high-frequency package for interconnect experiments, and buried heterostructure fabrication techniques have been pursued. Measurements have been made on the fabricated photodetectors to determine dark current, responsivity, and response time. The optical gates and the overall chip have been driven successfully with an input light beam, as well as with the optical signal interconnected through the one to five holograms.

  15. INTERCONNECTIONS BETWEEN HUMAN HEALTH AND ECOLOGICAL INTEGRITY

    EPA Science Inventory

    Interconnections between Human Health and Ecological Integrity emanates from a June 2000 Pellston Workshop in Snowbird, Utah, USA. Jointly sponsored by the Society of Environmental Toxicology and Chemistry (SETAC) and the Society of Toxicology (SOT), the workshop was motivated by...

  16. Computational continuum modeling of solder interconnects: Applications

    SciTech Connect

    Burchett, S.N.; Neilsen, M.K.; Frear, D.R.

    1997-04-01

    The most commonly used solder for electrical interconnections in electronic packages is the near eutectic 60Sn-40Fb alloy. This alloy has a number of processing advantages (suitable melting point of 183C and good wetting behavior). However, under conditions of cyclic strain and temperature (thermomechanical fatigue), the microstructure of this alloy undergoes a heterogeneous coarsening and failure process that makes the prediction of solder joint lifetime complex. A viscoplastic, microstructure dependent, constitutive model for solder, which is currently under development, was implemented into a finite element code. With this computational capability, the thermomechanical response of solder interconnects, including microstructural evolution, can be predicted. This capability was applied to predict the thermomechanical response of a mini ball grid array solder interconnect. In this paper, the constitutive model will first be briefly discussed. The results of computational studies to determine the thermomechanical response of a mini ball grid array solder interconnects then will be presented.

  17. Traffic congestion in interconnected complex networks

    NASA Astrophysics Data System (ADS)

    Tan, Fei; Wu, Jiajing; Xia, Yongxiang; Tse, Chi K.

    2014-06-01

    Traffic congestion in isolated complex networks has been investigated extensively over the last decade. Coupled network models have recently been developed to facilitate further understanding of real complex systems. Analysis of traffic congestion in coupled complex networks, however, is still relatively unexplored. In this paper, we try to explore the effect of interconnections on traffic congestion in interconnected Barabási-Albert scale-free networks. We find that assortative coupling can alleviate traffic congestion more readily than disassortative and random coupling when the node processing capacity is allocated based on node usage probability. Furthermore, the optimal coupling probability can be found for assortative coupling. However, three types of coupling preferences achieve similar traffic performance if all nodes share the same processing capacity. We analyze interconnected Internet autonomous-system-level graphs of South Korea and Japan and obtain similar results. Some practical suggestions are presented to optimize such real-world interconnected networks accordingly.

  18. Traffic congestion in interconnected complex networks.

    PubMed

    Tan, Fei; Wu, Jiajing; Xia, Yongxiang; Tse, Chi K

    2014-06-01

    Traffic congestion in isolated complex networks has been investigated extensively over the last decade. Coupled network models have recently been developed to facilitate further understanding of real complex systems. Analysis of traffic congestion in coupled complex networks, however, is still relatively unexplored. In this paper, we try to explore the effect of interconnections on traffic congestion in interconnected Barabási-Albert scale-free networks. We find that assortative coupling can alleviate traffic congestion more readily than disassortative and random coupling when the node processing capacity is allocated based on node usage probability. Furthermore, the optimal coupling probability can be found for assortative coupling. However, three types of coupling preferences achieve similar traffic performance if all nodes share the same processing capacity. We analyze interconnected Internet autonomous-system-level graphs of South Korea and Japan and obtain similar results. Some practical suggestions are presented to optimize such real-world interconnected networks accordingly.

  19. Stress-induced voiding in aluminum and copper interconnects

    NASA Astrophysics Data System (ADS)

    Hommel, M.; Fischer, A. H.; Glasow, A. v.; Zitzelsberger, A. E.

    2002-04-01

    Stress-induced voiding (SIV) is a serious reliability problem in metal interconnects. For aluminum a phenomenological model was developed which allows the extrapolation of metallization life times from stress conditions to operation conditions of the integrated circuit. Resistance drift measurements during high-temperature storage (HTS) on wafer-level have been performed and the experimental data could be fitted with that model. The influences of different parameters such as line width, metal level, thermal anneals of certain metal levels during processing and the deposition temperature of the interlevel dielectric material on the SIV behavior are discussed. The SIV behavior of copper dual damascene metallizations has been investigated on via line structures. A linear resistance drift during high-temperature storage has been observed. This is in contrast to aluminum, where a non-linear behavior was found. Failure analysis showed voids inside the via and not in the metal line as it has been observed in aluminum. Stress simulations have been performed in order to explain this behavior. Due to the complex stress state in a copper dual damascene via the temperature dependence of SIV in copper is different from that of aluminum.

  20. Silicon Hybrid Wafer Scale Integration Interconnect Evaluation

    DTIC Science & Technology

    1989-12-01

    the assessment of the current state -of-the-art in electromagnetic analyses to determine its applicability to NVSI interconnections. Weak links or... states that transmission line effects are clearly exhibited when the physical length of any component of an electrical system (include interconnections...assumedl for coniduc- tois and dielectrics. Furthermore, all geometric distances arc assuimedl to bie uniform. unless otherwise stated . This assertion

  1. Navigability of interconnected networks under random failures

    PubMed Central

    De Domenico, Manlio; Solé-Ribalta, Albert; Gómez, Sergio; Arenas, Alex

    2014-01-01

    Assessing the navigability of interconnected networks (transporting information, people, or goods) under eventual random failures is of utmost importance to design and protect critical infrastructures. Random walks are a good proxy to determine this navigability, specifically the coverage time of random walks, which is a measure of the dynamical functionality of the network. Here, we introduce the theoretical tools required to describe random walks in interconnected networks accounting for structure and dynamics inherent to real systems. We develop an analytical approach for the covering time of random walks in interconnected networks and compare it with extensive Monte Carlo simulations. Generally speaking, interconnected networks are more resilient to random failures than their individual layers per se, and we are able to quantify this effect. As an application––which we illustrate by considering the public transport of London––we show how the efficiency in exploring the multiplex critically depends on layers’ topology, interconnection strengths, and walk strategy. Our findings are corroborated by data-driven simulations, where the empirical distribution of check-ins and checks-out is considered and passengers travel along fastest paths in a network affected by real disruptions. These findings are fundamental for further development of searching and navigability strategies in real interconnected systems. PMID:24912174

  2. Navigability of interconnected networks under random failures.

    PubMed

    De Domenico, Manlio; Solé-Ribalta, Albert; Gómez, Sergio; Arenas, Alex

    2014-06-10

    Assessing the navigability of interconnected networks (transporting information, people, or goods) under eventual random failures is of utmost importance to design and protect critical infrastructures. Random walks are a good proxy to determine this navigability, specifically the coverage time of random walks, which is a measure of the dynamical functionality of the network. Here, we introduce the theoretical tools required to describe random walks in interconnected networks accounting for structure and dynamics inherent to real systems. We develop an analytical approach for the covering time of random walks in interconnected networks and compare it with extensive Monte Carlo simulations. Generally speaking, interconnected networks are more resilient to random failures than their individual layers per se, and we are able to quantify this effect. As an application--which we illustrate by considering the public transport of London--we show how the efficiency in exploring the multiplex critically depends on layers' topology, interconnection strengths, and walk strategy. Our findings are corroborated by data-driven simulations, where the empirical distribution of check-ins and checks-out is considered and passengers travel along fastest paths in a network affected by real disruptions. These findings are fundamental for further development of searching and navigability strategies in real interconnected systems.

  3. Scalable IP switching based on optical interconnect

    NASA Astrophysics Data System (ADS)

    Luo, Zhixiang; Cao, Mingcui; Liu, Erwu

    2000-10-01

    IP traffic on the Internet and enterprise networks has been growing exponentially in the last several years, and much attention is being focused on the use of IP multicast for real-time multimedia applications. The current soft and general-purpose CPU-based routers face great stress since they have great latency and low forwarding speeds. Based on the ASICs, layer 2 switching provides high-speed packet forwarding. Integrating high-speed of Layer 2 switching with the flexibility of Layer 3 routing, Layer 3 switching (IP switching) has been put forward in order to avoid the performance bottleneck associated with Layer 3 forwarding. In this paper, we present a prototype system of a scalable IP switching based on scalable ATM switching fabric and optical interconnect. The IP switching system mainly consists of the input/output interface unit, scalable ATM switching fabric and IP control component. Optical interconnects between the input fan-out stage and the interconnect stage, also the interconnect stage and the output concentration stage provide high-speed data paths. And the interconnect stage is composed of 16 X 16 CMOS-SEED ATM switching modules. With 64 ports of OC-12 interface, the maximum throughput of the prototype system is about 20 million packets per second (MPPS) for 256 bytes average packet length, and the packet loss ratio is less than 10e-9. Benefiting from the scalable architecture and the optical interconnect, this IP switching system can easily scale to very large network size.

  4. Multilevel Assessments of Science Standards

    ERIC Educational Resources Information Center

    Quellmalz, Edys S.; Timms, Michael J.; Silberglitt, Matt D.

    2011-01-01

    The Multilevel Assessment of Science Standards (MASS) project is creating a new generation of technology-enhanced formative assessments that bring the best formative assessment practices into classrooms to transform what, how, when, and where science learning is assessed. The project is investigating the feasibility, utility, technical quality,…

  5. Multilevel Modeling with Correlated Effects

    ERIC Educational Resources Information Center

    Kim, Jee-Seon; Frees, Edward W.

    2007-01-01

    When there exist omitted effects, measurement error, and/or simultaneity in multilevel models, explanatory variables may be correlated with random components, and standard estimation methods do not provide consistent estimates of model parameters. This paper introduces estimators that are consistent under such conditions. By employing generalized…

  6. Multilevel Modeling with Correlated Effects

    ERIC Educational Resources Information Center

    Kim, Jee-Seon; Frees, Edward W.

    2007-01-01

    When there exist omitted effects, measurement error, and/or simultaneity in multilevel models, explanatory variables may be correlated with random components, and standard estimation methods do not provide consistent estimates of model parameters. This paper introduces estimators that are consistent under such conditions. By employing generalized…

  7. Multilevel algorithms for nonlinear optimization

    NASA Technical Reports Server (NTRS)

    Alexandrov, Natalia; Dennis, J. E., Jr.

    1994-01-01

    Multidisciplinary design optimization (MDO) gives rise to nonlinear optimization problems characterized by a large number of constraints that naturally occur in blocks. We propose a class of multilevel optimization methods motivated by the structure and number of constraints and by the expense of the derivative computations for MDO. The algorithms are an extension to the nonlinear programming problem of the successful class of local Brown-Brent algorithms for nonlinear equations. Our extensions allow the user to partition constraints into arbitrary blocks to fit the application, and they separately process each block and the objective function, restricted to certain subspaces. The methods use trust regions as a globalization strategy, and they have been shown to be globally convergent under reasonable assumptions. The multilevel algorithms can be applied to all classes of MDO formulations. Multilevel algorithms for solving nonlinear systems of equations are a special case of the multilevel optimization methods. In this case, they can be viewed as a trust-region globalization of the Brown-Brent class.

  8. Generalized Multilevel Structural Equation Modeling

    ERIC Educational Resources Information Center

    Rabe-Hesketh, Sophia; Skrondal, Anders; Pickles, Andrew

    2004-01-01

    A unifying framework for generalized multilevel structural equation modeling is introduced. The models in the framework, called generalized linear latent and mixed models (GLLAMM), combine features of generalized linear mixed models (GLMM) and structural equation models (SEM) and consist of a response model and a structural model for the latent…

  9. FUNDAMENTAL STUDIES OF THE DURABILITY OF MATERIALS FOR INTERCONNECTS IN SOLID OXIDE FUEL CELLS

    SciTech Connect

    Hammer, J.; Laney, S.; Jackson, W.; Pettit, F.; Meier, J.; Dhanaraj, N.; Beuth, J.

    2005-01-28

    This task involves theoretical analysis of possible alternative metallic interconnect schemes including: Ni and dispersion-strengthened Ni, low CTE alloys based on Fe-Ni (Invar), coatings to suppress evaporation, and incorporation of high conductivity paths. The most promising systems are being evaluated experimentally with regard to durability and oxide conductivity.

  10. Selection and Evaluation of Heat-Resistant Alloys for Planar SOFC Interconnect Applications

    SciTech Connect

    Yang, Z Gary; Weil, K. Scott; Paxton, Dean M.; Stevenson, Jeffry W.

    2002-11-21

    Over the past several years, the steady reduction in SOFC operating temperatures to the intermediate range of 700~850oC [1] has made it feasible for lanthanum chromite to be supplanted by metals or alloys as the interconnect materials. Compared to doped lanthanum chromite, metals or alloys offer significantly lower raw material and fabrication costs. However, to be a durable and reliable, a metal or alloy has to satisfy several functional requirements specific to the interconnect under SOFC operating conditions. Specifically, the interconnect metal or alloy should possess the following properties: (i) Good surface stability (resistance to oxidation, hot corrosion, and carburization) in both cathodic (air) and anodic (fuel) atmospheres; (ii) Thermal expansion matching to the ceramic PEN (positive cathode-electrolyte-negative anode) and seal materials (as least for a rigid seal design); (iii) High electrical conductivity through both the bulk material and in-situ formed oxide scales; (iv) Bulk and interfacial thermal mechanical reliability and durability at the operating temperature; (v) Compatibility with other materials in contact with interconnects such as seals and electrical contact materials.

  11. Advanced micromechanisms in a multi-level polysilicon technology

    SciTech Connect

    Rodgers, M.S.; Sniegowski, J.J.; Miller, S.L.; Barron, C.C.; McWhorter, P.J.

    1997-08-01

    Quad-level polysilicon surface micromachining technology, comprising three mechanical levels plus an electrical interconnect layer, is giving rise to a new generation of micro-electromechanical devices and assemblies. Enhanced components can not be produced through greater flexibility in fabrication and design. New levels of design complexity that include multi-level gears, single-attempt locks, and optical elements have recently been realized. Extensive utilization of the fourth layer of polysilicon differentiates these latter generation devices from their predecessors. This level of poly enables the fabrication of pin joints, linkage arms, hinges on moveable plates, and multi-level gear assemblies. The mechanical design aspects of these latest micromachines will be discussed with particular emphasis on a number of design aspects of these latest micromachines will be discussed with particular emphasis on a number of design modifications that improve the power, reliability, and smoothness of operation of the microengine. The microengine is the primary actuation mechanism that is being used to drive mirrors out of plane and rotate 1600-{mu}m diameter gears. Also discussed is the authors most advanced micromechanical system to date, a complex proof-of-concept batch-fabricated assembly that, upon transmitting the proper electrical code to a mechanical lock, permits the operation of a micro-optical shutter.

  12. Electrical transport and electromigration studies on nickel encapsulated carbon nanotubes: possible future interconnects.

    PubMed

    Kulshrestha, Neha; Misra, Abhishek; Misra, D S

    2013-05-10

    We nominate the nickel filled multiwalled carbon nanotubes (MWNTs) as potential candidates to cope with challenges in persistent scaling for future interconnect technology. The insights into electrical transport through nickel filled carbon nanotubes provide an effective solution for major performance and reliability issues such as the increasing resistivity of metals at reduced scales, electromigration at high current densities and the problem of diffusion and corrosion faced by the existing copper interconnect technology. Furthermore, the nickel filled MWNTs outperform their hollow counterparts, the unfilled MWNTs, carrying at least one order higher current density, with increased time to failure. The results suggest that metal filled carbon nanotubes can provide a twofold benefit: (1) the metal filling provides an increased density of states for the system leading to a higher current density compared to hollow MWNTs, (2) metal out-diffusion and corrosion is prevented by the surrounding graphitic walls.

  13. Dislocation pile-ups as sites for formation of electromigration-induced transgranular slit-like voids in Al interconnects

    SciTech Connect

    Srikar, V.T.; Thompson, C.V.

    1999-12-17

    Electromigration-induced voiding in metal interconnects in Si integrated circuits is a serious reliability concern. The microstructure of narrow interconnects subject to post-pattern anneal is expected to be bamboo-like in character. These structures are best described as chains of single crystals, with grain boundaries perpendicular to the interconnect axis. In these microstructures, two distinct types of void morphologies have been reported in Al-alloy interconnects: large, wedge shaped erosion voids (E-voids), and narrow slit-like voids (S-voids). A summarized below, electromigration experiments conducted on single-crystal Al interconnects have clearly shown that the transition of erosion voids to slit-like voids is very strongly dependent on the crystallography of the interconnect, and also that there is some inhomogeneously distributed feature which triggers S-void formation, even in single-crystal interconnects. In summary, the authors feel that the strong crystallographic dependence of the S-voids, the possible effects of the enormous mechanical stresses (in excess of 1 GPa in some cases) which can exist in such interconnects, and the stochastic nature of the development of slit-like features, have not been adequately captured in the existing models. In what follows, the authors present a model for a role that dislocation pile-ups may play in reducing the energy of transition of E-voids to S-voids, and for controlling the location of this transition.

  14. Committed regional electrical interconnection projects in the Middle East

    SciTech Connect

    Azzam, M.; Al-Said, A.

    1994-12-01

    Due to the well-known advantages of electrical interconnections and their consequent benefits, Jordan considers the interconnection of its electrical network with the neighboring electrical networks as one of its main corporate strategies. At present the electrical interconnection project of the networks of Egypt, Iraq, Jordan, Syria, and Turkey is progressing. To achieve this interconnection project, two feasibility studies were conducted: interconnection of the Egyptian and Jordanian electrical power systems; interconnection of the electrical networks of Egypt, Iraq, Jordan, Syria, and Turkey (EIJST interconnection). This presentation reviews these studies and their results.

  15. Design of reconfigurable GRIN planar optical interconnects

    NASA Astrophysics Data System (ADS)

    Gomez-Reino, C.; Flores-Arias, M. T.; Perez, M. V.; Bao, C.; Castelo, A.; Nieto, D.

    2008-04-01

    Design of all-optics reconfigurable GRIN (Gradient-Index) planar structure for crossover and parallel interconnects will be presented. Design represents a unique combination of GRIN materials, simple geometry optics and waveguide technology for both parallel and distributed processing and communication networks. The optical analysis is based on-axis and off-axis multiple imaging property of GRIN components. The analysis includes the study of the Point Spread Function (PSF) for describing the performance of the GRIN planar structure and the evaluation of the Space Bandwidth Product (SBP) for estimating the number of channels which can be handled. The dependence of the number of channels on the wavelength of the light and the aperture of the planar interconnect is shown. The results are given for five working wavelengths of Laser Diode (LD) and for four transverse aperture of reconfigurable optical interconnect.

  16. Random walk centrality in interconnected multilayer networks

    NASA Astrophysics Data System (ADS)

    Solé-Ribalta, Albert; De Domenico, Manlio; Gómez, Sergio; Arenas, Alex

    2016-06-01

    Real-world complex systems exhibit multiple levels of relationships. In many cases they require to be modeled as interconnected multilayer networks, characterizing interactions of several types simultaneously. It is of crucial importance in many fields, from economics to biology and from urban planning to social sciences, to identify the most (or the less) influent nodes in a network using centrality measures. However, defining the centrality of actors in interconnected complex networks is not trivial. In this paper, we rely on the tensorial formalism recently proposed to characterize and investigate this kind of complex topologies, and extend two well known random walk centrality measures, the random walk betweenness and closeness centrality, to interconnected multilayer networks. For each of the measures we provide analytical expressions that completely agree with numerically results.

  17. The motion of interconnected flexible bodies

    NASA Technical Reports Server (NTRS)

    Hopkins, A. S.

    1975-01-01

    The equations of motion for an arbitrarily interconnected collection of substructures are derived. The substructures are elastic bodies which may be idealized as finite element assemblies and are subject to small deformations relative to a nominal state. Interconnections between the elastic substructures permit large relative translations and rotations between substructures, governed by Pfaffian constraints describing the connections. Screw connections (permitting rotation about and translation along a single axis) eliminate constraint forces and incorporate modal coupling. The problem of flexible spacecraft simulation is discussed. Hurty's component mode approach is extended by permitting interconnected elastic substructures large motions relative to each other and relative to inertial space. The hybrid coordinate methods are generalized by permitting all substructures to be flexible (rather than only the terminal members of a topological tree of substructures). The basic relationships of continuum mechanics are developed.

  18. Interconnection Testing of Distributed Resources: Preprint

    SciTech Connect

    Kroposki, B.; Basso, T.; DeBlasio, R.

    2004-02-01

    With the publication of IEEE 1547-2003(TM) Standard for Interconnecting Distributed Resources With Electric Power Systems, the electric power industry has a need to develop tests and procedures to verify that interconnection equipment meets 1547 technical requirements. A new standard, IEEE P1547.1(TM), is being written to give detailed tests and procedures for confirming that equipment meets the interconnection requirements. The National Renewable Energy Laboratory has been validating test procedures being developed as part of IEEE P1547.1. As work progresses on the validation of those procedures, information and test reports are passed on to the working group of IEEE P1547.1 for future revisions.

  19. Automotion of domain walls for spintronic interconnects

    SciTech Connect

    Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.

    2014-06-07

    We simulate “automotion,” the transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall motion, the proposed interconnects operate without longitudinal charge current transfer, with only a transient current pulse at domain wall creation and have favorable scaling down to the 20 nm dimension. Cases of both in-plane and out-of-plane magnetization are considered. Analytical dependence of the velocity of domain walls on the angle of magnetization are compared with full micromagnetic simulations. Deceleration, attenuation and disappearance, and reflection of domain walls are demonstrated through simulation. Dependences of the magnetization angle on the current pulse parameters are studied. The energy and delay analysis suggests that automotion is an attractive option for spintronic logic interconnects.

  20. Graphene Nanoribbons (GNRs) for Future Interconnect

    NASA Astrophysics Data System (ADS)

    Saptono Duryat, Rahmat

    2016-05-01

    Selecting and developing materials for the future devices require a sound understanding of design requirements. Miniaturization of electronic devices, as commonly expressed by Moore Law, has involved the integration level. Increase of the level has caused some consequences in the design and selection of materials for interconnection. The present paper deals with the challenge of materials design and selection beyond the nanoscale limit and the ability of traditional materials to cope with. One of the emerging materials, i.e. Graphene, will be reviewed with particular reference to its characteristics and potentials for future interconnection.

  1. On interconnected systems, passivity and some generalisations

    NASA Astrophysics Data System (ADS)

    Ordóñez-Hurtado, Rodrigo H.; Griggs, Wynita M.; Shorten, Robert N.

    2013-12-01

    A sufficient condition for the stability of large-scale interconnections of N linear time-variant systems is presented. Such a condition represents important extensions to passivity criteria and ensures stability by means of the existence of a positive definite (full-block) matrix P which is a common solution to Lyapunov equations involving a diagonal stacking of the N systems and the interconnection structure matrix. An experimental methodology for the verification of the sufficient condition also is proposed, based on evolutionary computation techniques. Applications of the new stability results are provided through illustrative examples, which are developed using particle swarm optimisation and genetic algorithms.

  2. Packaging considerations for planar optical interconnection systems.

    PubMed

    Acklin, B; Jahns, J

    1994-03-10

    We discuss various aspects of building an integrated optoelectronic system that is based on the concept of planar optics. A particular optical interconnection system has been fabricated and demonstrated. It provides parallel interconnections with 1024 optical channels that could be useful as an optical backplane in an optoelectronic multichip module. We consider the design and the fabrication of the optical system, schemes for the hybrid integration with optoelectronic device arrays, and the thermal management of an integrated system. The proposed hybrid integration scheme is based on mature technologies such as thermal anodic bonding and flip-chip bonding. Possibilities for efficient heat sinking are described.

  3. Electric Current Induced Thermomechanical Fatigue Testing of Interconnects

    NASA Astrophysics Data System (ADS)

    Keller, R. R.; Geiss, R. H.; Cheng, Y.-W.; Read, D. T.

    2005-09-01

    We demonstrate the use of electrical methods for evaluating the thermomechanical fatigue properties of patterned aluminum and copper interconnects on silicon-based substrates. Through a careful selection of alternating current frequency and current density, we used controlled Joule heating to simulate in an accelerated manner the type of low frequency thermal stress cycles that an interconnect structure may undergo. Sources of such stressing may include power cycling, energy-saving modes, or application-specific fluctuations, as opposed to stressing at chip operating frequencies. The thermal stresses are caused by differences in thermal expansion properties between the metal and constraining substrate or passivation. Test conditions included a frequency of 100 Hz and current density of 11 - 16 MA/cm2, which led to a cyclic temperature amplitude of approximately 100 K, and corresponding cyclic stress amplitude in excess of 100 MPa for Al-1Si and Cu lines on oxidized silicon. The failure mechanism differs from that observed in direct current electromigration studies, and involves formation of localized plasticity, which causes topography changes on the less-constrained surfaces of the interconnect. Open circuit eventually took place by melting at a region of severely reduced cross-sectional area. In these studies, both Al-1Si and Cu responded to power cycling by deforming in a manner that was highly dependent upon variations in grain size and orientation. Isolated patches of damage appeared early within the confines of individual grains or clusters of grains, as determined by automated electron backscatter diffraction. With increased cycling or with increased current density, the extent of damage became more severe and widespread. We discuss the utility of electrical methods for accelerated testing of mechanical reliability.

  4. A multilevel stochastic collocation method for SPDEs

    SciTech Connect

    Gunzburger, Max; Jantsch, Peter; Teckentrup, Aretha; Webster, Clayton

    2015-03-10

    We present a multilevel stochastic collocation method that, as do multilevel Monte Carlo methods, uses a hierarchy of spatial approximations to reduce the overall computational complexity when solving partial differential equations with random inputs. For approximation in parameter space, a hierarchy of multi-dimensional interpolants of increasing fidelity are used. Rigorous convergence and computational cost estimates for the new multilevel stochastic collocation method are derived and used to demonstrate its advantages compared to standard single-level stochastic collocation approximations as well as multilevel Monte Carlo methods.

  5. Pressure activated interconnection of micro transfer printed components

    NASA Astrophysics Data System (ADS)

    Prevatte, Carl; Guven, Ibrahim; Ghosal, Kanchan; Gomez, David; Moore, Tanya; Bonafede, Salvatore; Raymond, Brook; Trindade, António Jose; Fecioru, Alin; Kneeburg, David; Meitl, Matthew A.; Bower, Christopher A.

    2016-05-01

    Micro transfer printing and other forms of micro assembly deterministically produce heterogeneously integrated systems of miniaturized components on non-native substrates. Most micro assembled systems include electrical interconnections to the miniaturized components, typically accomplished by metal wires formed on the non-native substrate after the assembly operation. An alternative scheme establishing interconnections during the assembly operation is a cost-effective manufacturing method for producing heterogeneous microsystems, and facilitates the repair of integrated microsystems, such as displays, by ex post facto addition of components to correct defects after system-level tests. This letter describes pressure-concentrating conductor structures formed on silicon (1 0 0) wafers to establish connections to preexisting conductive traces on glass and plastic substrates during micro transfer printing with an elastomer stamp. The pressure concentrators penetrate a polymer layer to form the connection, and reflow of the polymer layer bonds the components securely to the target substrate. The experimental yield of series-connected test systems with >1000 electrical connections demonstrates the suitability of the process for manufacturing, and robustness of the test systems against exposure to thermal shock, damp heat, and mechanical flexure shows reliability of the resulting bonds.

  6. Silicon photonics for compact, energy-efficient interconnects [Invited

    NASA Astrophysics Data System (ADS)

    Barwicz, T.; Byun, H.; Gan, F.; Holzwarth, C. W.; Popovic, M. A.; Rakich, P. T.; Watts, M. R.; Ippen, E. P.; Kã¤Rtner, F. X.; Smith, H. I.; Orcutt, J. S.; Ram, R. J.; Stojanovic, V.; Olubuyide, O. O.; Hoyt, J. L.; Spector, S.; Geis, M.; Grein, M.; Lyszczarz, T.; Yoon, J. U.

    2007-01-01

    The goal of the research program that we describe is to break the emerging performance wall in microprocessor development arising from limited bandwidth and density of on-chip interconnects and chip-to-chip (processor-to-memory) electrical interfaces. Complementary metal-oxide semiconductor compatible photonic devices provide an infrastructure for deployment of a range of integrated photonic networks, which will replace state-of-the-art electrical interconnects, providing significant gains at the system level. Scaling of wavelength-division-multiplexing (WDM) architectures using high-index-contrast (HIC) waveguides offers one path to realizing the energy efficiency and density requirements of high data rate links. HIC microring-resonator filters are well suited to support add-drop nodes in dense WDM photonic networks with high aggregate data rates because they support high Q's and, due to their traveling-wave character, naturally support physically separated input and drop ports. A novel reconfigurable, 'hitless' switch is presented that does not perturb the express channels either before, during, or after reconfiguration. In addition, multigigahertz operation of low-power, Mach-Zehnder silicon modulators as well as germanium-on-silicon photodiodes are presented.

  7. Metallic nanowire networks

    DOEpatents

    Song, Yujiang; Shelnutt, John A.

    2012-11-06

    A metallic nanowire network synthesized using chemical reduction of a metal ion source by a reducing agent in the presence of a soft template comprising a tubular inverse micellar network. The network of interconnected polycrystalline nanowires has a very high surface-area/volume ratio, which makes it highly suitable for use in catalytic applications.

  8. Revised Record of Decision for the Electrical Interconnection of the Summit/Westward Project

    SciTech Connect

    N /A

    2004-10-21

    The Bonneville Power Administration (BPA) has decided to amend its July 25, 2003, Record of Decision (ROD) regarding the proposed Summit/Westward Project (Project) to offer contract terms for an optional interconnection of this Project into the Federal Columbia River Transmission System (FCRTS). Under this optional interconnection plan, BPA would integrate electric power from the Project into the FCRTS at a point adjacent to Clatskanie People's Utility District (CPUD) existing Wauna Substation. In order to deliver power to this location, CPUD would develop a new substation (Bradbury Substation) at a site near the Project and a new 230-kV transmission line from there to CPUD's Wauna Substation, which is already connected to the FCRTS. As part of this revised decision, BPA will facilitate CPUD development of the Bradbury-Wauna transmission line by allowing joint use of BPA right-of-way. This will involve reconstructing a section of BPA's 115-kV Allston-Astoria No. 1 transmission line from single-circuit H-frame wood-pole design to double-circuit single metal pole design. Terms of BPA participation in CPUD's development of the Bradbury-Wauna transmission line will be documented in a Construction Agreement. This optional interconnection plan is in addition to BPA's previous offer for interconnection of the Project at BPA's Allston Substation, as documented in the July 25, 2003, ROD. As with the initial interconnection plan, the decision to offer terms to interconnect the Project through the optional interconnection plan is consistent with BPA's Business Plan Final Environmental Impact Statement (BP EIS) (DOE/EIS-0183, June 1995), and the Business Plan Record of Decision (BP ROD, August 1995). This decision thus is similarly tiered to the Business Plan ROD.

  9. 47 CFR 51.305 - Interconnection.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... service quality as perceived by end users, and includes, but is not limited to, service quality as... Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERCONNECTION... described in § 51.319; (3) That is at a level of quality that is equal to that which the incumbent LEC...

  10. Vector Lyapunov Functions for Stochastic Interconnected Systems

    NASA Technical Reports Server (NTRS)

    Boussalis, D.

    1985-01-01

    Theoretical paper presents set of sufficient conditions for asymptotic and exponential stability with probability 1 for class of stochastic interconnected systems. Theory applicable to complicated, large-scale mechanical or electrical systems, and, for several design problems, it reduces computational difficulty by relating stability criteria to fundamental structural features of system.

  11. A continuum model for interconnected lattice trusses

    NASA Technical Reports Server (NTRS)

    Balakrishnan, A. V.

    1992-01-01

    A continuum model for interconnected lattice trusses based on the 1D Timoshenko beam approximation is developed using the NASA-LRC Phase Zero Evolutionary Model. The continuum model dynamics is presented in the canonical wave-equation form in a Hilbert space.

  12. Organization of Systems with Bussed Interconnections

    DTIC Science & Technology

    1992-03-01

    arrangement of modules. For general arrangements, arbitration time grows linearly with number of busses, while for linear arrangements, *1.4 .,-B2’ZT TE•.1...for linear arrangements, arbitration time is constant. Keywords: arbitration with busses, binomial arbitration, bussed interconnections, busses...demonstrating the superiority of binomial arbitration for general arrangements of modules under the digital transmission line model. For linear

  13. 14 CFR 27.674 - Interconnected controls.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Interconnected controls. 27.674 Section 27.674 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: NORMAL CATEGORY ROTORCRAFT Design and Construction Control Systems §...

  14. 14 CFR 29.674 - Interconnected controls.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Interconnected controls. 29.674 Section 29.674 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Design and Construction Control Systems §...

  15. 14 CFR 27.674 - Interconnected controls.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Interconnected controls. 27.674 Section 27.674 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: NORMAL CATEGORY ROTORCRAFT Design and Construction Control Systems §...

  16. 14 CFR 29.674 - Interconnected controls.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Interconnected controls. 29.674 Section 29.674 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Design and Construction Control Systems §...

  17. 14 CFR 23.701 - Flap interconnection.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Design and Construction Control Systems § 23.701 Flap interconnection. (a) The main wing flaps and related movable surfaces as a system... independent of the flap drive system; or by an approved equivalent means; or (2) Be designed so that...

  18. 14 CFR 23.701 - Flap interconnection.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Design and Construction Control Systems § 23.701 Flap interconnection. (a) The main wing flaps and related movable surfaces as a system... independent of the flap drive system; or by an approved equivalent means; or (2) Be designed so that...

  19. 14 CFR 23.701 - Flap interconnection.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Design and Construction Control Systems § 23.701 Flap interconnection. (a) The main wing flaps and related movable surfaces as a system... independent of the flap drive system; or by an approved equivalent means; or (2) Be designed so that...

  20. 14 CFR 23.701 - Flap interconnection.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Design and Construction Control Systems § 23.701 Flap interconnection. (a) The main wing flaps and related movable surfaces as a system... independent of the flap drive system; or by an approved equivalent means; or (2) Be designed so that...

  1. Computational continuum modeling of solder interconnects

    SciTech Connect

    Burchett, S.N.; Neilsen, M.K.; Frear, D.R.; Stephens, J.J.

    1997-03-01

    The most commonly used solder for electrical interconnections in electronic packages is the near eutectic 60Sn-40Pb alloy. This alloy has a number of processing advantages (suitable melting point of 183 C and good wetting behavior). However, under conditions of cyclic strain and temperature (thermomechanical fatigue), the microstructure of this alloy undergoes a heterogeneous coarsening and failure process that makes prediction of solder joint lifetime complex. A viscoplastic, microstructure dependent, constitutive model for solder which is currently in development was implemented into a finite element code. With this computational capability, the thermomechanical response of solder interconnects, including microstructural evolution, can be predicted. This capability was applied to predict the thermomechanical response of various leadless chip carrier solder interconnects to determine the effects of variations in geometry and loading. In this paper, the constitutive model will first be briefly discussed. The results of computational studies to determine the effect of geometry and loading variations on leadless chip carrier solder interconnects then will be presented.

  2. Electric network interconnection of Mashreq Arab Countries

    SciTech Connect

    El-Amin, I.M.; Al-Shehri, A.M.; Opoku, G.; Al-Baiyat, S.A.; Zedan, F.M.

    1994-12-01

    Power system interconnection is a well established practice for a variety of technical and economical reasons. Several interconnected networks exist worldwide for a number of factors. Some of these networks cross international boundaries. This presentation discusses the future developments of the power systems of Mashreq Arab Countries (MAC). MAC consists of Bahrain, Egypt, Iraq, Jordan, Kuwait, Lebanon, Oman, Qatar, Saudi Arabia, United Arab Emirates (UAE), and Yemen. Mac power systems are operated by government or semigovernment bodies. Many of these countries have national or regional electric grids but are generally isolated from each other. With the exception of Saudi Arabia power systems, which employ 60 Hz, all other MAC utilities use 50 Hz frequency. Each country is served by one utility, except Saudi Arabia, which is served by four major utilities and some smaller utilities serving remote towns and small load centers. The major utilities are the Saudi Consolidated electric Company in the Eastern Province (SCECO East), SCECO Center, SCECO West, and SCECO South. These are the ones considered in this study. The energy resources in MAC are varied. Countries such as Egypt, Iraq, and Syria have significant hydro resources.The gulf countries and Iraq have abundant fossil fuel, The variation in energy resources as well as the characteristics of the electric load make it essential to look into interconnections beyond the national boundaries. Most of the existing or planned interconnections involve few power systems. A study involving 12 countries and over 20 utilities with different characteristics represents a very large scale undertaking.

  3. 47 CFR 95.1313 - Interconnection prohibited.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... circuits) or as an integral part of an authorized, private, internal system of communication or as an integral part of dispatch point circuits in a multi-use radio station are not considered to be interconnection for purposes of this rule part. ...

  4. Optical interconnections to focal plane arrays

    SciTech Connect

    Rienstra, J.L.; Hinckley, M.K.

    2000-11-01

    The authors have successfully demonstrated an optical data interconnection from the output of a focal plane array to the downstream data acquisition electronics. The demonstrated approach included a continuous wave laser beam directed at a multiple quantum well reflectance modulator connected to the focal plane array analog output. The output waveform from the optical interconnect was observed on an oscilloscope to be a replica of the input signal. They fed the output of the optical data link to the same data acquisition system used to characterize focal plane array performance. Measurements of the signal to noise ratio at the input and output of the optical interconnection showed that the signal to noise ratio was reduced by a factor of 10 or more. Analysis of the noise and link gain showed that the primary contributors to the additional noise were laser intensity noise and photodetector receiver noise. Subsequent efforts should be able to reduce these noise sources considerably and should result in substantially improved signal to noise performance. They also observed significant photocurrent generation in the reflectance modulator that imposes a current load on the focal plane array output amplifier. This current loading is an issue with the demonstrated approach because it tends to negate the power saving feature of the reflectance modulator interconnection concept.

  5. 47 CFR 90.477 - Interconnected systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... where the base station site or sites proposed stations are located 120 km (75 mi.) or more from the... mi.) of the 25 cities, they must obtain the consent of all co-channel licensees located both within 120 km (75 mi.) of the center of the city; and within 120 km (75 mi.) of the interconnected...

  6. 47 CFR 90.477 - Interconnected systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... where the base station site or sites proposed stations are located 120 km (75 mi.) or more from the... mi.) of the 25 cities, they must obtain the consent of all co-channel licensees located both within 120 km (75 mi.) of the center of the city; and within 120 km (75 mi.) of the interconnected...

  7. 47 CFR 90.477 - Interconnected systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... where the base station site or sites proposed stations are located 120 km (75 mi.) or more from the... mi.) of the 25 cities, they must obtain the consent of all co-channel licensees located both within 120 km (75 mi.) of the center of the city; and within 120 km (75 mi.) of the interconnected...

  8. Novel Composite Materials for SOFC Cathode-Interconnect Contact

    SciTech Connect

    J. H. Zhu

    2009-07-31

    This report summarized the research efforts and major conclusions of our University Coal Research Project, which focused on developing a new class of electrically-conductive, Cr-blocking, damage-tolerant Ag-perovksite composite materials for the cathode-interconnect contact of intermediate-temperature solid oxide fuel cell (SOFC) stacks. The Ag evaporation rate increased linearly with air flow rate initially and became constant for the air flow rate {ge} {approx} 1.0 cm {center_dot} s{sup -1}. An activation energy of 280 KJ.mol{sup -1} was obtained for Ag evaporation in both air and Ar+5%H{sub 2}+3%H{sub 2}O. The exposure environment had no measurable influence on the Ag evaporation rate as well as its dependence on the gas flow rate, while different surface morphological features were developed after thermal exposure in the oxidizing and reducing environments. Pure Ag is too volatile at the SOFC operating temperature and its evaporation rate needs to be reduced to facilitate its application as the cathode-interconnect contact. Based on extensive evaporation testing, it was found that none of the alloying additions reduced the evaporation rate of Ag over the long-term exposure, except the noble metals Au, Pt, and Pd; however, these noble elements are too expensive to justify their practical use in contact materials. Furthermore, the addition of La{sub 0.8}Sr{sub 0.2}MnO{sub 3} (LSM) into Ag to form a composite material also did not significantly modify the Ag evaporation rate. The Ag-perovskite composites with the perovskite being either (La{sub 0.6}Sr{sub 0.4})(Co{sub 0.8}Fe{sub 0.2})O{sub 3} (LSCF) or LSM were systematically evaluated as the contact material between the ferritic interconnect alloy Crofer 22 APU and the LSM cathode. The area specific resistances (ASRs) of the test specimens were shown to be highly dependent on the volume percentage and the type of the perovskite present in the composite contact material as well as the amount of thermal cycling

  9. Large Scale Interconnections Using Dynamic Gratings

    NASA Astrophysics Data System (ADS)

    Pauliat, Gilles; Roosen, Gerald

    1987-01-01

    Optics is attractive for interconnects because the possibility of crossing without any interaction multiple light beams. A crossbar network can be achieved using holographic elements which permit to connect independently all inputs and all outputs. The incorporation of dynamic holographic materials is enticing as this will render the interconnection changeable. However, it is necessary to find first a passive method permitting to achieve beam deflection and secondly a photosensitive material of high optical quality requiring low power levels to optically induce the refractive index changes. We first describe an optical method allowing to produce very large deflections of light beams thus enabling to randomly address any spot on a plane. Such a technique appears applicable to both interconnections of VLSI chips and random access of optical memories. Our scheme for realizing dynamic optical interconnects is based on Bragg diffraction of the beam to steer by a dynamic phase grating which spacing and orientation are changeable in real time. This is achieved in a passive way by acting on the optical frequency of the control beams used to record the dynamic grating. Deflection angles of 15° have been experimentally demonstrated for a 27 nm shift in the control wavelength. For a larger wavelength scanning (50 nm), 28° deflections are anticipated while maintaining the Bragg condition satisfied. We then discuss some issues related to photosensitive materials able to dynamically record the optically induced refractive index change. The specific example of Bi12 Si 020 or Bi12 Ge 020 photorefractive crystals is presented. Indeed these materials are very attractive as they require low driving energy and exhibit a memory effect. This latter property permits to achieve numerous iterations between computing cells before reconfiguration of the interconnect network.

  10. Towards energy-efficient photonic interconnects

    NASA Astrophysics Data System (ADS)

    Demir, Yigit; Hardavellas, Nikos

    2015-03-01

    Silicon photonics have emerged as a promising solution to meet the growing demand for high-bandwidth, low-latency, and energy-efficient on-chip and off-chip communication in many-core processors. However, current silicon-photonic interconnect designs for many-core processors waste a significant amount of power because (a) lasers are always on, even during periods of interconnect inactivity, and (b) microring resonators employ heaters which consume a significant amount of power just to overcome thermal variations and maintain communication on the photonic links, especially in a 3D-stacked design. The problem of high laser power consumption is particularly important as lasers typically have very low energy efficiency, and photonic interconnects often remain underutilized both in scientific computing (compute-intensive execution phases underutilize the interconnect), and in server computing (servers in Google-scale datacenters have a typical utilization of less than 30%). We address the high laser power consumption by proposing EcoLaser+, which is a laser control scheme that saves energy by predicting the interconnect activity and opportunistically turning the on-chip laser off when possible, and also by scaling the width of the communication link based on a runtime prediction of the expected message length. Our laser control scheme can save up to 62 - 92% of the laser energy, and improve the energy efficiency of a manycore processor with negligible performance penalty. We address the high trimming (heating) power consumption of the microrings by proposing insulation methods that reduce the impact of localized heating induced by highly-active components on the 3D-stacked logic die.

  11. A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of interface bonding strength

    NASA Astrophysics Data System (ADS)

    Sukharev, Valeriy; Zschech, Ehrenfried

    2004-12-01

    A physical model and a simulation algorithm are used to predict an electromigration-(EM-) induced void nucleation and growth in dual-inlaid copper interconnect. Incorporation of all important atom migration driving forces into the mass balance equation and its solution together with solution of the coupled electromagnetics, heat transfer, and elasticity problems allows to simulate EM-induced degradation in a variety of dual-inlaid copper interconnect segments characterized by different dominant channels for mass transport. The interface bonding strengths, significantly influencing the interface diffusivity and consequently the mass transport along interfaces, result in completely different degradation and failure pictures for the weak and strengthened copper/capping layer interfaces. Strengthening of the top interface of inlaid copper interconnect metal line is a promising way to prolong the EM lifetime. The results of the numerical simulation have been proven experimentally by the EM degradation studies on the fully embedded dual-inlaid copper interconnect test structures. EM-induced void formation, movement, and growth in a copper interconnect were continuously monitored in an in situ scanning electron microscopy experiment. The correspondence between simulation results and experimental data indicates the applicability of the developed model for optimization of the physical and electrical design rules. Simulation-based optimization of the interconnect architecture, segment geometry, material properties, and some of the process parameters can generate on-chip interconnect systems with a high immunity to EM-induced failures.

  12. Analysis of thermal vias in molded interconnect devices

    NASA Astrophysics Data System (ADS)

    Reitterer, Jörg; Fidler, Franz; Saint Julien-Wallsee, Ferdinand; Barth, Maximilian; Eberhardt, Wolfgang; Keßler, Ulrich; Kück, Heinz; Schmid, Ulrich

    2013-05-01

    The ongoing miniaturization of micro-opto-electro-mechanical-systems requires compact multifunctional packaging solutions like offered by the three-dimensional MID (molded interconnect device) technology which combines integrated electronic circuitry and mechanical support structures directly into one compact housing. Due to the inherently large thermal resistance of thermoplastic MID substrate materials, temperature-sensitive applications require carefully arranged thermal vias in order to reduce the thermal resistance of the packaging effectively. This paper presents the analysis and optimization of various laser-drilled thermal via design parameters of MIDs including hole diameter, pitch, plating thickness of the Cu/Ni/Au metallization layers as well as the void level of the filling material inside the vias.

  13. Interconnect assembly for an electronic assembly and assembly method therefor

    DOEpatents

    Gerbsch, Erich William

    2003-06-10

    An interconnect assembly and method for a semiconductor device, in which the interconnect assembly can be used in lieu of wirebond connections to form an electronic assembly. The interconnect assembly includes first and second interconnect members. The first interconnect member has a first surface with a first contact and a second surface with a second contact electrically connected to the first contact, while the second interconnect member has a flexible finger contacting the second contact of the first interconnect member. The first interconnect member is adapted to be aligned and registered with a semiconductor device having a contact on a first surface thereof, so that the first contact of the first interconnect member electrically contacts the contact of the semiconductor device. Consequently, the assembly method does not require any wirebonds, but instead merely entails aligning and registering the first interconnect member with the semiconductor device so that the contacts of the first interconnect member and the semiconductor device make electrically contact, and then contacting the second contact of the first interconnect member with the flexible finger of the second interconnect member.

  14. Structural optimization by multilevel decomposition

    NASA Technical Reports Server (NTRS)

    Sobieszczanski-Sobieski, J.; James, B.; Dovi, A.

    1983-01-01

    A method is described for decomposing an optimization problem into a set of subproblems and a coordination problem which preserves coupling between the subproblems. The method is introduced as a special case of multilevel, multidisciplinary system optimization and its algorithm is fully described for two level optimization for structures assembled of finite elements of arbitrary type. Numerical results are given for an example of a framework to show that the decomposition method converges and yields results comparable to those obtained without decomposition. It is pointed out that optimization by decomposition should reduce the design time by allowing groups of engineers, using different computers to work concurrently on the same large problem.

  15. FUNDAMENTAL STUDIES OF THE DURABILITY OF MATERIALS FOR INTERCONNECTS IN SOLID OXIDE FUEL CELLS

    SciTech Connect

    Frederick S. Pettit; Gerald H. Meier

    2003-06-30

    This report describes the result of the first eight months of effort on a project directed at improving metallic interconnect materials for solid oxide fuel cells (SOFCs). The results include cyclic oxidation studies of a group of ferritic alloys, which are candidate interconnect materials. The exposures have been carried out in simulated fuel cell atmospheres. The oxidation morphologies have been characterized and the ASR has been measured for the oxide scales. The effect of fuel cell electric current density on chromia growth rates has been considered The thermomechanical behavior of the scales has been investigated by stress measurements using x-ray diffraction and interfacial fracture toughness measurements using indentation. The ultimate goal of this thrust is to use knowledge of changes in oxide thickness, stress and adhesion to develop accelerated testing methods for evaluating SOFC interconnect alloys. Finally a theoretical assessment of the potential for use of ''new'' metallic materials as interconnect materials has been conducted and is presented in this report. Alloys being considered include materials based on pure nickel, materials based on the ''Invar'' concept, and coated materials to optimize properties in both the anode and cathode gases.

  16. Mechanical characterization of oxide coating-interconnect interfaces for solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Akanda, Sajedur R.; Walter, Mark E.; Kidner, Neil J.; Seabaugh, Matthew M.

    2012-07-01

    This paper reports on the characterization of interfaces between oxide coatings and metallic interconnects that are used in planar solid oxide fuel cells. With the reduction of operating temperatures to 800 °C, it is possible to replace ceramic interconnects with less expensive stainless steels. However, when incorporating chromia-forming metallic interconnects, steps must be taken to inhibit chromium poisoning. One approach to prevent chromium poisoning, is to deposit dense, protective coatings, such as manganese cobalt spinel oxide (MCO). The brittle nature of MCO makes it susceptible to damage under mechanical and thermal stresses during operation. A four point bend experiment is designed to assess the strength and adhesion of reduced and oxidized coatings deposited on SS441 or Crofer interconnects. Resulting tensile cracking patterns on the convex side of bend specimen are used to quantify the interfacial shear strength with a shear lag model. Using energy based fracture mechanics, interfacial fracture energy is calculated from the strain at the onset of coating spallation. Scanning electron microscopy images of the cracked coating surfaces are processed to analyze the failure mechanisms, crack spacing and spalled areas. At 3% strain, the weakest interface is found in the Crofer system with the oxidized coating.

  17. Ion-beam-assisted formation of interconnections into high temperature polymers

    NASA Astrophysics Data System (ADS)

    Davenas, J.; Boiteux, G.; Bureau, J. M.; Broussoux, D.

    1990-12-01

    High energy ion beams induce conductive properties into heat-resistant polymers due to band closing which results from the formation of extended aromatic domains. The aromatic cycles which ensure the high stability of the molecular structure promote the formation of highly conducting (10 2-10 3 s/cm) phases in these polymers upon irradiation. The field of application of this process is analyzed and we show that the main interest lies in the formation of short links such as for vertical interconnections (VIAs) in multilevel integration of circuits or in the restructuration of circuits. We discuss the main parameters which control the appearance of conductivity and emphasize the role of the ion beam flux, which is a cause of reproducibility difficulties. Some solutions are proposed.

  18. A Multilevel Assessment of Differential Item Functioning.

    ERIC Educational Resources Information Center

    Shen, Linjun

    A multilevel approach was proposed for the assessment of differential item functioning and compared with the traditional logistic regression approach. Data from the Comprehensive Osteopathic Medical Licensing Examination for 2,300 freshman osteopathic medical students were analyzed. The multilevel approach used three-level hierarchical generalized…

  19. Scalable Adaptive Multilevel Solvers for Multiphysics Problems

    SciTech Connect

    Xu, Jinchao

    2014-11-26

    In this project, we carried out many studies on adaptive and parallel multilevel methods for numerical modeling for various applications, including Magnetohydrodynamics (MHD) and complex fluids. We have made significant efforts and advances in adaptive multilevel methods of the multiphysics problems: multigrid methods, adaptive finite element methods, and applications.

  20. Designing nanogadgets by interconnecting carbon nanotubes with zinc layers.

    PubMed

    Khazaei, Mohammad; Lee, Sang Uck; Pichierri, Fabio; Kawazoe, Yoshiyuki

    2008-05-01

    Using first-principles calculations we propose a new approach for the design of functional units obtained by interconnecting carbon nanotubes (CNTs) with different numbers of zinc layers. The theoretical investigations on electron transport properties of the resulting 1D heterojunctions containing CNTs with same or different chiralities (i.e., metallic or semiconducting) and one, two, or three zinc layers illustrate that the junctions with two semiconducting CNTs show semiconducting I-V characteristics while the junctions with two different CNT electrodes (metallic and semiconducting) show rectifying diode properties. The remarkable features emerging from this study is that the zinc layers behave as a momentum filter (near the Fermi energy the Bloch states having the same orbital character as the molecular states conduct well) when they are inserted within metallic CNT electrodes thereby providing 1D heterojunctions that can act as a wire-like, negative differential resistance (NDR), or varistor-type nanoscale device. Our results prove the idea that it is possible to design specific heterojunctions, which can select a conducting channel between two electrodes. Also, it is worth mentioning that in this study for the first time we have designed a nanoscale device with the characteristics of a varistor.

  1. National Offshore Wind Energy Grid Interconnection Study Full Report

    SciTech Connect

    Daniel, John P.; Liu, Shu; Ibanez, Eduardo; Pennock, Ken; Reed, Gregory; Hanes, Spencer

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States.

  2. High temperature solid electrolyte fuel cell configurations and interconnections

    DOEpatents

    Isenberg, Arnold O.

    1984-01-01

    High temperature fuel cell configurations and interconnections are made including annular cells having a solid electrolyte sandwiched between thin film electrodes. The cells are electrically interconnected along an elongated axial outer surface.

  3. National Offshore Wind Energy Grid Interconnection Study Executive Summary

    SciTech Connect

    Daniel, John P.; Liu, Shu; Ibanez, Eduardo; Pennock, Ken; Reed, Gregory; Hanes, Spencer

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States.

  4. The Impact of Multilevel Impurity on the Tunnel and Ballistic Currents in a Graphene Nanoribbon

    NASA Astrophysics Data System (ADS)

    Konobeeva, N. N.; Belonenko, M. B.

    2017-05-01

    The paper focuses on the effect of a multilevel impurity in a graphene nanoribbon on the tunnel current flowing in the contact of the latter with metal. Calculations of the ballistic current in a graphene nanoribbon and the tunnel current of the ribbon contact with metal are performed. Analysis is provided for the dependence of current-voltage characteristic of the contact on the integral of transition between impurity levels of the nanoribbon.

  5. A multilevel nonvolatile magnetoelectric memory

    NASA Astrophysics Data System (ADS)

    Shen, Jianxin; Cong, Junzhuang; Shang, Dashan; Chai, Yisheng; Shen, Shipeng; Zhai, Kun; Sun, Young

    2016-09-01

    The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

  6. A multilevel nonvolatile magnetoelectric memory

    PubMed Central

    Shen, Jianxin; Cong, Junzhuang; Shang, Dashan; Chai, Yisheng; Shen, Shipeng; Zhai, Kun; Sun, Young

    2016-01-01

    The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells. PMID:27681812

  7. Multilevel joint competing risk models

    NASA Astrophysics Data System (ADS)

    Karunarathna, G. H. S.; Sooriyarachchi, M. R.

    2017-09-01

    Joint modeling approaches are often encountered for different outcomes of competing risk time to event and count in many biomedical and epidemiology studies in the presence of cluster effect. Hospital length of stay (LOS) has been the widely used outcome measure in hospital utilization due to the benchmark measurement for measuring multiple terminations such as discharge, transferred, dead and patients who have not completed the event of interest at the follow up period (censored) during hospitalizations. Competing risk models provide a method of addressing such multiple destinations since classical time to event models yield biased results when there are multiple events. In this study, the concept of joint modeling has been applied to the dengue epidemiology in Sri Lanka, 2006-2008 to assess the relationship between different outcomes of LOS and platelet count of dengue patients with the district cluster effect. Two key approaches have been applied to build up the joint scenario. In the first approach, modeling each competing risk separately using the binary logistic model, treating all other events as censored under the multilevel discrete time to event model, while the platelet counts are assumed to follow a lognormal regression model. The second approach is based on the endogeneity effect in the multilevel competing risks and count model. Model parameters were estimated using maximum likelihood based on the Laplace approximation. Moreover, the study reveals that joint modeling approach yield more precise results compared to fitting two separate univariate models, in terms of AIC (Akaike Information Criterion).

  8. Advanced silicon device technologies for optical interconnects

    NASA Astrophysics Data System (ADS)

    Wosinski, Lech; Wang, Zhechao; Lou, Fei; Dai, Daoxin; Lourdudoss, Sebastian; Thylen, Lars

    2012-01-01

    Silicon photonics is an emerging technology offering novel solutions in different areas requiring highly integrated communication systems for optical networking, sensing, bio-applications and computer interconnects. Silicon photonicsbased communication has many advantages over electric wires for multiprocessor and multicore macro-chip architectures including high bandwidth data transmission, high speed and low power consumption. Following the INTEL's concept to "siliconize" photonics, silicon device technologies should be able to solve the fabrication problems for six main building blocks for realization of optical interconnects: light generation, guiding of light including wavelength selectivity, light modulation for signal encoding, detection, low cost assembly including optical connecting of the devices to the real world and finally the electronic control systems.

  9. Architecture for on-die interconnect

    SciTech Connect

    Khare, Surhud; More, Ankit; Somasekhar, Dinesh; Dunning, David S.

    2016-03-15

    In an embodiment, an apparatus includes: a plurality of islands configured on a semiconductor die, each of the plurality of islands having a plurality of cores; and a plurality of network switches configured on the semiconductor die and each associated with one of the plurality of islands, where each network switch includes a plurality of output ports, a first set of the output ports are each to couple to the associated network switch of an island via a point-to-point interconnect and a second set of the output ports are each to couple to the associated network switches of a plurality of islands via a point-to-multipoint interconnect. Other embodiments are described and claimed.

  10. A Thermal Model for Carbon Nanotube Interconnects

    PubMed Central

    Mohsin, Kaji Muhammad; Srivastava, Ashok; Sharma, Ashwani K.; Mayberry, Clay

    2013-01-01

    In this work, we have studied Joule heating in carbon nanotube based very large scale integration (VLSI) interconnects and incorporated Joule heating influenced scattering in our previously developed current transport model. The theoretical model explains breakdown in carbon nanotube resistance which limits the current density. We have also studied scattering parameters of carbon nanotube (CNT) interconnects and compared with the earlier work. For 1 µm length single-wall carbon nanotube, 3 dB frequency in S12 parameter reduces to ~120 GHz from 1 THz considering Joule heating. It has been found that bias voltage has little effect on scattering parameters, while length has very strong effect on scattering parameters. PMID:28348333

  11. An Interconnect Bus Power Optimization Method

    NASA Astrophysics Data System (ADS)

    En, Yun-Fei; Zhu, Zhang-Ming; Hao, Yue

    2010-07-01

    A simple yet accurate interconnect parasitical capacitance model is presented. Based on this model a novel interconnect bus optimization methodology is proposed. Combining wire spacing with wire ordering, this methodology focuses on bus dynamic power optimization with consideration of bus performance requirements. The optimization methodology is verified under a 65 nm technology node and it shows that with 50% slack in the routing space, a 33.03% power saving can be provided by the proposed optimization methodology for an intermediate video bus compared to the 27.68% power saving provided by uniform spacing technology. The proposed methodology is especially suitable for computer-aided design of nanometer scale on-chip buses.

  12. Interconnection of bundled solid oxide fuel cells

    DOEpatents

    Brown, Michael; Bessette, II, Norman F; Litka, Anthony F; Schmidt, Douglas S

    2014-01-14

    A system and method for electrically interconnecting a plurality of fuel cells to provide dense packing of the fuel cells. Each one of the plurality of fuel cells has a plurality of discrete electrical connection points along an outer surface. Electrical connections are made directly between the discrete electrical connection points of adjacent fuel cells so that the fuel cells can be packed more densely. Fuel cells have at least one outer electrode and at least one discrete interconnection to an inner electrode, wherein the outer electrode is one of a cathode and and anode and wherein the inner electrode is the other of the cathode and the anode. In tubular solid oxide fuel cells the discrete electrical connection points are spaced along the length of the fuel cell.

  13. Development of Interconnect Technologies for Particle Detectors

    SciTech Connect

    Tripathi, Mani

    2015-01-29

    This final report covers the three years of this grant, for the funding period 9/1/2010 - 8/31/2013. The project consisted of generic detector R&D work at UC Davis, with an emphasis on developing interconnect technologies for applications in HEP. Much of the work is done at our Facility for Interconnect Technologies (FIT) at UC Davis. FIT was established using ARRA funds, with further studies supported by this grant. Besides generic R&D work at UC Davis, FIT is engaged in providing bump bonding help to several DOE supported detector R&D efforts. Some of the developmental work was also supported by funding from other sources: continuing CMS project funds and the Linear Collider R&D funds. The latter program is now terminated. The three year program saw a good deal of progress on several fronts, which are reported here.

  14. Release Resistant Electrical Interconnections For Mems Devices

    DOEpatents

    Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.

    2005-02-22

    A release resistant electrical interconnection comprising a gold-based electrical conductor compression bonded directly to a highly-doped polysilicon bonding pad in a MEMS, IMEMS, or MOEMS device, without using any intermediate layers of aluminum, titanium, solder, or conductive adhesive disposed in-between the conductor and polysilicon pad. After the initial compression bond has been formed, subsequent heat treatment of the joint above 363 C creates a liquid eutectic phase at the bondline comprising gold plus approximately 3 wt % silicon, which, upon re-solidification, significantly improves the bond strength by reforming and enhancing the initial bond. This type of electrical interconnection is resistant to chemical attack from acids used for releasing MEMS elements (HF, HCL), thereby enabling the use of a "package-first, release-second" sequence for fabricating MEMS devices. Likewise, the bond strength of an Au--Ge compression bond may be increased by forming a transient liquid eutectic phase comprising Au-12 wt % Ge.

  15. 14 CFR 29.957 - Flow between interconnected tanks.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Flow between interconnected tanks. 29.957... AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System § 29.957 Flow between interconnected tanks. (a) Where tank outlets are interconnected and allow fuel to flow...

  16. 78 FR 7523 - Small Generator Interconnection Agreements and Procedures

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-01

    ... Generator Interconnection Agreements and Procedures; Proposed Rule #0;#0;Federal Register / Vol. 78 , No. 22... Commission 18 CFR Part 35 Small Generator Interconnection Agreements and Procedures AGENCY: Federal Energy... Commission (Commission) is proposing to revise the pro forma Small Generator Interconnection Procedures (SGIP...

  17. 14 CFR 23.957 - Flow between interconnected tanks.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Flow between interconnected tanks. 23.957... Fuel System § 23.957 Flow between interconnected tanks. (a) It must be impossible, in a gravity feed system with interconnected tank outlets, for enough fuel to flow between the tanks to cause an overflow...

  18. 14 CFR 23.957 - Flow between interconnected tanks.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Flow between interconnected tanks. 23.957... Fuel System § 23.957 Flow between interconnected tanks. (a) It must be impossible, in a gravity feed system with interconnected tank outlets, for enough fuel to flow between the tanks to cause an...

  19. Printed Wiring Assembly and Interconnection Reliability.

    DTIC Science & Technology

    1981-11-01

    2.2.1 Plated Through Holes (PTH). The PTH multilayer printed wiring board consists of a number of layers of thin circuit boards which ara stacked...interconnection on discrete wiring w/PTH assemblies. The discrete wiring boards are plated in an electroless copper bath where copper is deposited to... board failures is the mismatch of thermal coefficients of expansion in the plated through hole. The thermal coefficients of expansion for the copper

  20. Bioactive macroporous titanium implants highly interconnected.

    PubMed

    Caparrós, Cristina; Ortiz-Hernandez, Mónica; Molmeneu, Meritxell; Punset, Miguel; Calero, José Antonio; Aparicio, Conrado; Fernández-Fairén, Mariano; Perez, Román; Gil, Francisco Javier

    2016-10-01

    Intervertebral implants should be designed with low load requirements, high friction coefficient and low elastic modulus in order to avoid the stress shielding effect on bone. Furthermore, the presence of a highly interconnected porous structure allows stimulating bone in-growth and enhancing implant-bone fixation. The aim of this study was to obtain bioactive porous titanium implants with highly interconnected pores with a total porosity of approximately 57 %. Porous Titanium implants were produced by powder sintering route using the space holder technique with a binder phase and were then evaluated in an in vivo study. The size of the interconnection diameter between the macropores was about 210 μm in order to guarantee bone in-growth through osteblastic cell penetration. Surface roughness and mechanical properties were analyzed. Stiffness was reduced as a result of the powder sintering technique which allowed the formation of a porous network. Compression and fatigue tests exhibited suitable properties in order to guarantee a proper compromise between mechanical properties and pore interconnectivity. Bioactivity treatment effect in novel sintered porous titanium materials was studied by thermo-chemical treatments and were compared with the same material that had undergone different bioactive treatments. Bioactive thermo-chemical treatment was confirmed by the presence of sodium titanates on the surface of the implants as well as inside the porous network. Raman spectroscopy results suggested that the identified titanate structures would enhance in vivo apatite formation by promoting ion exchange for the apatite formation process. In vivo results demonstrated that the bioactive titanium achieved over 75 % tissue colonization compared to the 40 % value for the untreated titanium.

  1. Market Based Analysis of Power System Interconnections

    NASA Astrophysics Data System (ADS)

    Obushevs, Artjoms; Turcik, Mario; Oleinikova, Irina; Junghans, Gatis

    2011-01-01

    Analysis in this Article is focused on usage of transmission grid under liberalized market with implicit transmission capacity allocation method, e.g. Nordic market. Attention is paid on fundamental changes in transmission utilization and its economical effective operation. For interconnection and power flow analysis and losses calculation model of Nordic grid was developed and transmission losses calculation method was created. Given approach will improve economical efficiency of system operation in electricity market conditions.

  2. Electrical and optical interconnects for aeronautical systems

    NASA Astrophysics Data System (ADS)

    Nicole, Pierre

    1990-12-01

    In response to the increasing problems due to the interconnects of electronic systems on different geometrical scales, a study is presented of the possibilities offered by guided or free space optical transmissions. Emphasis is placed upon the consequences of increasing numbers of electronic systems in aeronautical equipment. Several promising solutions are suggested. Finally, a review of the technologies and techniques under study points to the areas where concerted efforts should be made in the field of passive and active components of electrical systems.

  3. Hydraulically interconnected vehicle suspension: background and modelling

    NASA Astrophysics Data System (ADS)

    Zhang, Nong; Smith, Wade A.; Jeyakumaran, Jeku

    2010-01-01

    This paper presents a novel approach for the frequency domain analysis of a vehicle fitted with a general hydraulically interconnected suspension (HIS) system. Ideally, interconnected suspensions have the capability, unique among passive systems, to provide stiffness and damping characteristics dependent on the all-wheel suspension mode in operation. A basic, lumped-mass, four-degree-of-freedom half-car model is used to illustrate the proposed methodology. The mechanical-fluid boundary condition in the double-acting cylinders is modelled as an external force on the mechanical system and a moving boundary on the fluid system. The fluid system itself is modelled using the hydraulic impedance method, in which the relationships between the dynamic fluid states, i.e. pressures and flows, at the extremities of a single fluid circuit are determined by the transfer matrix method. A set of coupled, frequency-dependent equations, which govern the dynamics of the integrated half-car system, are then derived and the application of these equations to both free and forced vibration analysis is explained. The fluid system impedance matrix for the two general wheel-pair interconnection types-anti-synchronous and anti-oppositional-is also given. To further outline the application of the proposed methodology, the paper finishes with an example using a typical anti-roll HIS system. The integrated half-car system's free vibration solutions and frequency response functions are then obtained and discussed in some detail. The presented approach provides a scientific basis for investigating the dynamic characteristics of HIS-equipped vehicles, and the results offer further confirmation that interconnected suspension schemes can provide, at least to some extent, individual control of modal stiffness and damping characteristics.

  4. Implementation of interconnect simulation tools in spice

    NASA Technical Reports Server (NTRS)

    Satsangi, H.; Schutt-Aine, J. E.

    1993-01-01

    Accurate computer simulation of high speed digital computer circuits and communication circuits requires a multimode approach to simulate both the devices and the interconnects between devices. Classical circuit analysis algorithms (lumped parameter) are needed for circuit devices and the network formed by the interconnected devices. The interconnects, however, have to be modeled as transmission lines which incorporate electromagnetic field analysis. An approach to writing a multimode simulator is to take an existing software package which performs either lumped parameter analysis or field analysis and add the missing type of analysis routines to the package. In this work a traditionally lumped parameter simulator, SPICE, is modified so that it will perform lossy transmission line analysis using a different model approach. Modifying SPICE3E2 or any other large software package is not a trivial task. An understanding of the programming conventions used, simulation software, and simulation algorithms is required. This thesis was written to clarify the procedure for installing a device into SPICE3E2. The installation of three devices is documented and the installations of the first two provide a foundation for installation of the lossy line which is the third device. The details of discussions are specific to SPICE, but the concepts will be helpful when performing installations into other circuit analysis packages.

  5. Modeling and synthesis of multicomputer interconnection networks

    NASA Technical Reports Server (NTRS)

    Standley, Hilda M.; Auxter, D. Steve

    1990-01-01

    The type of interconnection network employed has a profound effect on the performance of a multicomputer and multiprocessor design. Adequate models are needed to aid in the design and development of interconnection networks. A novel modeling approach using statistical and optimization techniques is described. This method represents an attempt to compare diverse interconnection network designs in a way that allows not only the best of existing designs to be identified but to suggest other, perhaps hybrid, networks that may offer better performance. Stepwise linear regression is used to develop a polynomial surface representation of performance in a (k+1) space with a total of k quantitative and qualitative independent variables describing graph-theoretic characteristics such as size, average degree, diameter, radius, girth, node-connectivity, edge-connectivity, minimum dominating set size, and maximum number of prime node and edge cutsets. Dependent variables used to measure performance are average message delay and the ratio of message completion rate to network connection cost. Response Surface Methodology (RSM) optimizes a response variable from a polynomial function of several independent variables. Steepest ascent path may also be used to approach optimum points.

  6. Optimizing Baseload Power of Interconnected Wind Farms

    NASA Astrophysics Data System (ADS)

    Kobrin, B. H.

    2010-12-01

    Interconnecting wind farms has been proposed as a way to reduce the natural unreliability of wind power caused by the intermittency of winds. In a previous study, the benefits of interconnecting up to 19 sites in the Midwestern United States were evaluated with the assumption that the same number of turbines would be installed at each site. The goal of this study was to avoid this assumption and examine the advantages of optimizing the ratio of turbines at each site. An optimization algorithm based on the gradient method was used to maximize the baseload power, or guaranteed power 87.5% of the year, using hourly wind speed data for the same 19 sites. The result was a significant improvement in the reliability of the array, increasing the baseload power by 38% compared to the array with equally-weighted sites. Further analysis showed that the turbines were generally distributed according to the average wind power at each site and the wind correlation among sites. In addition to optimizing the average baseload of the array, this study examined the benefits of optimizing the baseload for peak usage time (between noon and 7 p.m), and thus a simplified model was created to analyze how interconnecting wind farms could increase correlation with energy consumption. Optimization for peak usage hours, however, provided no additional benefit over the original optimized array because the variation of average hourly wind speeds was well-correlated among the sites.

  7. Integrated nanophotonic devices for optical interconnections

    NASA Astrophysics Data System (ADS)

    Huang, Yidong; Feng, Xue; Cui, Kaiyu; Li, Yongzhuo; Wang, Yu

    2016-03-01

    Nanostructure is an effective solution for realizing optoelectronic devices with compact size and high performances simultaneously. This paper reports our research progress on integrated nanophotonic devices for optical interconnections. We proposed a parent-sub micro ring structure for optical add-drop multiplexer (OADM) with compact footprint, large free spectral range, and uniform channel spacing. All eight channels can be multiplexed and de-multiplexed with 2.6 dB drop loss, 0.36 nm bandwidth (>40 GHz), -20 dB channel crosstalk, and high thermal tuning efficiency of 0.15 nm/mW. A novel principle of optical switch was proposed and demonstrated based on the coupling of the defect modes in photonic crystal waveguide. Switching functionality with bandwidth up to 24 nm and extinction ratio in excess of 15 dB over the entire bandwidth was achieved, while the footprint was only 8 μm×17.6 μm. We proposed an optical orbital angular momentum (OAM) coding and decoding method to increase the data-carrying capacity of wireless optical interconnect. An integrated OAM emitter, where the topological charge can be continuously varied from -4 to 4 was realized. Also we studied ultrafast modulated nLED as the integrated light source for optical interconnections using a nanobeam cavity with stagger holes.

  8. Silicon hybrid wafer scale integration interconnect evaluation

    NASA Astrophysics Data System (ADS)

    Lyke, James C.

    1989-12-01

    The electrical characteristics of interconnections that have been proposed for use in silicon hybrid wafer scale integration (WSI) approaches were investigated. The study was based on a set of 5 inch test wafers, containing various interconnection structures previously designed at AFIT. Two test wafers used a special polyimide dielectric, while a third was composed of a benzocyclobutene (BCB). The investigated structures represented 10 cm length aluminum, coupled, stripline-like transmission lines. The metrics used included continuity measurements, ac measurement of the characteristic impedance and coupling levels, and pulsed-signal response measurements. Continuity results indicated transmission and leakage failures in all wafers, although the failure mechanisms were sometimes wafer-specific. The characteristic impedance measurement technique was flawed, but revealed interesting information concerning the driving-point impedances of the structures. Most coupled structures manifested coupling responses which were consistent in shape with theoretical estimates, but higher in magnitude by 10 to 20 dB. All structures revealed coupling levels lower than -25 dB. Despite correlation difficulties, the results implied that transmission line behavior is manifested in WSIC interconnections.

  9. Synchrotron X-Ray Microdiffraction Studies of Electromigration in Interconnect lines at the Advanced Light Source

    SciTech Connect

    Tamura, Nobumichi; Chen, Kai; Kunz, Martin

    2009-12-01

    Synchrotron polychromatic X-ray microdiffraction is a particularly suitable technique to study in situ the effect of electromigration in metal interconnects as add spatial resolution to grain orientation and strain sensitivity. This technique has been extensively used at the Advanced Light Source to monitor changes in aluminum and copper interconnect test structures while high-density current is passed into them during accelerated tests at elevated temperature. One of the principal findings is the observation of electromigration-induced plasticity in the metal lines that appear during the very early stages of electromigration. In some of the lines, high density of geometrically necessary dislocation are formed leading to additional diffusion paths causing an enhancement of electromigration effect at test temperature.

  10. Wireless Interconnects for Intra-chip & Inter-chip Transmission

    NASA Astrophysics Data System (ADS)

    Narde, Rounak Singh

    With the emergence of Internet of Things and information revolution, the demand of high performance computing systems is increasing. The copper interconnects inside the computing chips have evolved into a sophisticated network of interconnects known as Network on Chip (NoC) comprising of routers, switches, repeaters, just like computer networks. When network on chip is implemented on a large scale like in Multicore Multichip (MCMC) systems for High Performance Computing (HPC) systems, length of interconnects increases and so are the problems like power dissipation, interconnect delays, clock synchronization and electrical noise. In this thesis, wireless interconnects are chosen as the substitute for wired copper interconnects. Wireless interconnects offer easy integration with CMOS fabrication and chip packaging. Using wireless interconnects working at unlicensed mm-wave band (57-64GHz), high data rate of Gbps can be achieved. This thesis presents study of transmission between zigzag antennas as wireless interconnects for Multichip multicores (MCMC) systems and 3D IC. For MCMC systems, a four-chips 16-cores model is analyzed with only four wireless interconnects in three configurations with different antenna orientations and locations. Return loss and transmission coefficients are simulated in ANSYS HFSS. Moreover, wireless interconnects are designed, fabricated and tested on a 6'' silicon wafer with resistivity of 55O-cm using a basic standard CMOS process. Wireless interconnect are designed to work at 30GHz using ANSYS HFSS. The fabricated antennas are resonating around 20GHz with a return loss of less than -10dB. The transmission coefficients between antenna pair within a 20mm x 20mm silicon die is found to be varying between -45dB to -55dB. Furthermore, wireless interconnect approach is extended for 3D IC. Wireless interconnects are implemented as zigzag antenna. This thesis extends the work of analyzing the wireless interconnects in 3D IC with different

  11. Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects

    SciTech Connect

    Robertson, J.; Zhong, G.; Telg, H.; Thomsen, C.; Warner, J. H.; Briggs, G. A. D.; Dettlaff-Weglikowska, U.; Roth, S.

    2008-10-20

    We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe-Al{sub 2}O{sub 3} thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system gives rise to a broad range of nanotube diameters, with no preferential selectivity of semiconducting tubes, but with at least 1/3 of metallic tubes.

  12. Parallel Interconnection of Broadcast Systems with Multiple FIFO Channels

    NASA Astrophysics Data System (ADS)

    de Juan Marín, Ruben; Cholvi, Vicent; Jiménez, Ernesto; Muñoz-Escoí, Francesc D.

    This paper proposes new protocols for the interconnection of FIFO- and causal-ordered broadcast systems, thus increasing their scalability. They use several interconnection links between systems, which avoids bottleneck problems due to the network traffic, since messages are not forced to go throughout a single link but instead through the several links we establish. General architectures to interconnect FIFO- and causal-ordered systems are proposed. Failure management is also discussed and a performance analysis is given, detailing the benefits introduced by these interconnection approaches that are able to easily increase the resulting interconnection bandwidth.

  13. Multi-level assemblies of lead sulphide nanorods.

    PubMed

    Lu, Qingyi; Gao, Feng; Komarneni, Sridhar

    2006-05-28

    A new concept of multi-level assemblies of nanorod-based structures has been proposed, which could give new insight into the construction of nanorod-based complex structures from the bottom up. Multi-level architectures of complex lead sulphide (PbS) nanorod-based structures have been realized by a simple and general amino acid-mediated approach. First-level structure (multi-arm horn-like structure), second-level structure (bi-pyramid structure formed by several horn-like structures), and third-level structure (multi-pyramid structure formed by several pyramid-like structures) can be synthesized with the assistance of different amino acids: aspartic acid, serine, and histidine, respectively. The amino acids have several functional groups, such as -NH(2) and -COOH, which have strong abilities for coordination with the metal ions, and might provide reaction sites by coordinating with metal ions to initiate and then confine the assemblies of the PbS nanorods. This amino acid-mediated method provides a possibility of studying the formation and assembly mechanisms from the bottom up and might open a door to constructing complex nanorod-based structures at different levels.

  14. High-Density, High-Bandwidth, Multilevel Holographic Memory

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin

    2008-01-01

    A proposed holographic memory system would be capable of storing data at unprecedentedly high density, and its data transfer performance in both reading and writing would be characterized by exceptionally high bandwidth. The capabilities of the proposed system would greatly exceed even those of a state-of-the art memory system, based on binary holograms (in which each pixel value represents 0 or 1), that can hold .1 terabyte of data and can support a reading or writing rate as high as 1 Gb/s. The storage capacity of the state-of-theart system cannot be increased without also increasing the volume and mass of the system. However, in principle, the storage capacity could be increased greatly, without significantly increasing the volume and mass, if multilevel holograms were used instead of binary holograms. For example, a 3-bit (8-level) hologram could store 8 terabytes, or an 8-bit (256-level) hologram could store 256 terabytes, in a system having little or no more size and mass than does the state-of-the-art 1-terabyte binary holographic memory. The proposed system would utilize multilevel holograms. The system would include lasers, imaging lenses and other beam-forming optics, a block photorefractive crystal wherein the holograms would be formed, and two multilevel spatial light modulators in the form of commercially available deformable-mirror-device spatial light modulators (DMDSLMs) made for use in high speed input conversion of data up to 12 bits. For readout, the system would also include two arrays of complementary metal oxide/semiconductor (CMOS) photodetectors matching the spatial light modulators. The system would further include a reference-beam sterring device (equivalent of a scanning mirror), containing no sliding parts, that could be either a liquid-crystal phased-array device or a microscopic mirror actuated by a high-speed microelectromechanical system. Time-multiplexing and the multilevel nature of the DMDSLM would be exploited to enable writing

  15. On multilevel block modulation codes

    NASA Technical Reports Server (NTRS)

    Kasami, Tadao; Takata, Toyoo; Fujiwara, Toru; Lin, Shu

    1991-01-01

    The multilevel (ML) technique for combining block coding and modulation is investigated. A general formulation is presented for ML modulation codes in terms of component codes with appropriate distance measures. A specific method for constructing ML block modulation codes (MLBMCs) with interdependency among component codes is proposed. Given an MLBMC C with no interdependency among the binary component codes, the proposed method gives an MLBC C-prime that has the same rate as C, a minimum squared Euclidean distance not less than that of C, a trellis diagram with the same number of states as that of C, and a smaller number of nearest-neighbor codewords than that of C. Finally, a technique is presented for analyzing the error performance of MLBMCs for an additive white Gaussian noise channel based on soft-decision maximum-likelihood decoding.

  16. On multilevel block modulation codes

    NASA Technical Reports Server (NTRS)

    Kasami, Tadao; Takata, Toyoo; Fujiwara, Toru; Lin, Shu

    1991-01-01

    The multilevel (ML) technique for combining block coding and modulation is investigated. A general formulation is presented for ML modulation codes in terms of component codes with appropriate distance measures. A specific method for constructing ML block modulation codes (MLBMCs) with interdependency among component codes is proposed. Given an MLBMC C with no interdependency among the binary component codes, the proposed method gives an MLBC C-prime that has the same rate as C, a minimum squared Euclidean distance not less than that of C, a trellis diagram with the same number of states as that of C, and a smaller number of nearest-neighbor codewords than that of C. Finally, a technique is presented for analyzing the error performance of MLBMCs for an additive white Gaussian noise channel based on soft-decision maximum-likelihood decoding.

  17. Multilevel modelling: Beyond the basic applications.

    PubMed

    Wright, Daniel B; London, Kamala

    2009-05-01

    Over the last 30 years statistical algorithms have been developed to analyse datasets that have a hierarchical/multilevel structure. Particularly within developmental and educational psychology these techniques have become common where the sample has an obvious hierarchical structure, like pupils nested within a classroom. We describe two areas beyond the basic applications of multilevel modelling that are important to psychology: modelling the covariance structure in longitudinal designs and using generalized linear multilevel modelling as an alternative to methods from signal detection theory (SDT). Detailed code for all analyses is described using packages for the freeware R.

  18. Multilevel converters for power system applications

    SciTech Connect

    Lai, J.S.; Stovall, J.P.; Peng, F.Z. |

    1995-09-01

    Multilevel converters are emerging as a new breed of power converter options for power system applications. These converters are most suitable for high voltage high power applications because they connect devices in series without the need for component matching. One of the major limitations of the multilevel converters is the voltage unbalance between different levels. To avoid voltage unbalance between different levels, several techniques have been proposed for different applications. Excluding magnetic-coupled converters, this paper introduces three multilevel voltage source converters: (1) diode-clamp, (2) flying-capacitors, and (3) cascaded inverters with separate dc sources. The operation principle, features, constraints, and potential applications of these converters will be discussed.

  19. Development of Ni1-xCoxO as the cathode/interconnect contact for solid oxide fuel cells

    SciTech Connect

    Lu, Zigui; Xia, Guanguang; Templeton, Joshua D.; Li, Xiaohong S.; Nie, Zimin; Yang, Zhenguo; Stevenson, Jeffry W.

    2011-06-01

    A new type of material, Ni1-xCoxO, was developed for solid oxide fuel cell (SOFC) cathode/interconnect contact applications. The phase structure, coefficient of thermal expansion, sintering behavior, electrical property, and mechanical bonding strength of these materials were evaluated against the requirements of the SOFC cathode/interconnect contact. A dense cathode/interconnect contact layer was developed through reaction sintering from Ni and Co metal powders. An area specific resistance (ASR) as low as 5.5 mohm.cm2 was observed after 1000 h exposure in air at 800 °C for the LSM/Ni0.33Co0.67O/AISI441 assembly. Average mechanical strengths of 6.8 and 5.0 MPa were obtained for the cathode/contact/cathode and interconnect/contact/interconnect structures, respectively. The significantly low ASR was probably due to the dense structure and therefore improved electrical conductivity of the Ni0.33Co0.67O contact and the good bonding of the interfaces between the contact and the cathode, and between the contact and the interconnect.

  20. Environmental Regulation Impacts on Eastern Interconnection Performance

    SciTech Connect

    Markham, Penn N; Liu, Yilu; Young II, Marcus Aaron

    2013-07-01

    In the United States, recent environmental regulations will likely result in the removal of nearly 30 GW of oil and coal-fired generation from the power grid, mostly in the Eastern Interconnection (EI). The effects of this transition on voltage stability and transmission line flows have previously not been studied from a system-wide perspective. This report discusses the results of power flow studies designed to simulate the evolution of the EI over the next few years as traditional generation sources are replaced with environmentally friendlier ones such as natural gas and wind.

  1. Interconnection of Europe`s power systems

    SciTech Connect

    Manos, P.

    1996-03-01

    More than six years have passed since the Berlin Wall fell during Christmas of 1989, and a unified pan-European electricity-supply system is still not a reality. Progress toward that goal has been certain but slow. Technical and political differences still block the final step in the integration process: a full hookup between the grids of western and northern Europe and the transmission networks of the former Warsaw Pact nations. It has fallen to unified Germany, as the bridge between East and West, to serve as the catalyst of Europe`s electrical congress. This paper discusses the existing and planned interconnection along with a historical perspective.

  2. NITINOL Interconnect Device for Optical Fiber Waveguides

    DTIC Science & Technology

    1981-07-01

    LE EL,~NAVSEA REPORT NO. S27L~kV-NL 4P fNSWNC TR 81-129 1 JULY 1981 0 NITINOL INTERC&INECT DEVICE FOR OPTICAL FIBER WAVEGUIDES FINAL REPORT A...ACCESSION NO. 3. RECIPIENT’S CATALOG NUMBER NSWC TR 81-129I 1-19 -A )ci , ’ 4 TI TL E (and Sbtitle) S. TYPE OF REPORT & PERIOD COVERED NITINOL ... NITINOL Optical Fibers 20. ABSTRACT (Continue on reverse side if neceeewy and identify by block number) Two different interconnect devices for optical

  3. High density interconnection technology - Surface mount technology

    NASA Astrophysics Data System (ADS)

    Menozzi, G.

    The design features of surface mount technology (SMT) circuits for data transmission, engineering and aerospace applications are examined. Details of pin out, dual face, and interconnection techniques employed for SMT circuits mounted on plastic or ceramic leadless chip carriers are explored. The industrial processes applied to obtain the SMT boards are discussed, along with methods for quality assurance, especially for the soldered connections. SMT installations in the form of 4 Mbit multilayer circuits for an ESA project and a 32-bit mainframe computer are described.

  4. Repairable chip bonding/interconnect process

    DOEpatents

    Bernhardt, Anthony F.; Contolini, Robert J.; Malba, Vincent; Riddle, Robert A.

    1997-01-01

    A repairable, chip-to-board interconnect process which addresses cost and testability issues in the multi-chip modules. This process can be carried out using a chip-on-sacrificial-substrate technique, involving laser processing. This process avoids the curing/solvent evolution problems encountered in prior approaches, as well is resolving prior plating problems and the requirements for fillets. For repairable high speed chip-to-board connection, transmission lines can be formed on the sides of the chip from chip bond pads, ending in a gull wing at the bottom of the chip for subsequent solder.

  5. Repairable chip bonding/interconnect process

    DOEpatents

    Bernhardt, A.F.; Contolini, R.J.; Malba, V.; Riddle, R.A.

    1997-08-05

    A repairable, chip-to-board interconnect process which addresses cost and testability issues in the multi-chip modules is disclosed. This process can be carried out using a chip-on-sacrificial-substrate technique, involving laser processing. This process avoids the curing/solvent evolution problems encountered in prior approaches, as well is resolving prior plating problems and the requirements for fillets. For repairable high speed chip-to-board connection, transmission lines can be formed on the sides of the chip from chip bond pads, ending in a gull wing at the bottom of the chip for subsequent solder. 10 figs.

  6. Optically Tunable Gratings for Optical Interconnects

    DTIC Science & Technology

    1989-10-30

    OPTICALLY TUNABLE GRATINGS FOR OPTICAL INTERCONNECTS Final Report SELECTED JAN 2 31990 D ~ Submitted...such as acousto - optic or electro- optic deflectors . Using the strengths of our research program, we investigated optically tuneable gratings in...are those ~!,f~~ a~Sh~;~~L~~ d ~~9~H ~~t.:~~!-r~~~’~IU! 2 ~’h!~ ~H~~!~g:rtment of the Army position, 17. COSATI CODES 1 I. SUBJECT TERMS (Continut on

  7. The Upsides and Downsides of Organelle Interconnectivity.

    PubMed

    Gottschling, Daniel E; Nyström, Thomas

    2017-03-23

    Interconnectivity and feedback control are hallmarks of biological systems. This includes communication between organelles, which allows them to function and adapt to changing cellular environments. While the specific mechanisms for all communications remain opaque, unraveling the wiring of organelle networks is critical to understand how biological systems are built and why they might collapse, as occurs in aging. A comprehensive understanding of all the routes involved in inter-organelle communication is still lacking, but important themes are beginning to emerge, primarily in budding yeast. These routes are reviewed here in the context of sub-system proteostasis and complex adaptive systems theory. Copyright © 2017 Elsevier Inc. All rights reserved.

  8. Updating Interconnection Screens for PV System Integration

    SciTech Connect

    Coddington, M.; Mather, B.; Kroposki, B.; Lynn, K.; Razon, A.; Ellis, A.; Hill, R.; Key, T.; Nicole, K.; Smith, J.

    2012-02-01

    This white paper evaluates the origins and usefulness of the capacity penetration screen, offer short-term solutions which could effectively allow fast-track interconnection to many PV system applications, and considers longer-term solutions for increasing PV deployment levels in a safe and reliable manner while reducing or eliminating the emphasis on the penetration screen. Short-term and longer-term alternatives approaches are offered as examples; however, specific modifications to screening procedures should be discussed with stakeholders and must ultimately be adopted by state and federal regulatory bodies.

  9. Integrated interconnection systems for aerospace applications

    NASA Astrophysics Data System (ADS)

    Kerfoot, Keith; Gohman, Richard

    1988-05-01

    The application of an integrated interconnection system (IIS), which utilizes flat conductor cables and conventional round wire, to electrical system wiring in aircraft is examined. The advantages of the IIS to present wiring techniques are studied. The implementation of an IIS wiring network on the AH-64A Advanced Attack Helicopter is simulated. The system's weight, reliability, maintainability, performance, and production costs are analyzed. It is noted that the potential production cost savings make the IIS an applicable system for a new electrical wiring design.

  10. Optical Interconnection Via Computer-Generated Holograms

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang; Zhou, Shaomin

    1995-01-01

    Method of free-space optical interconnection developed for data-processing applications like parallel optical computing, neural-network computing, and switching in optical communication networks. In method, multiple optical connections between multiple sources of light in one array and multiple photodetectors in another array made via computer-generated holograms in electrically addressed spatial light modulators (ESLMs). Offers potential advantages of massive parallelism, high space-bandwidth product, high time-bandwidth product, low power consumption, low cross talk, and low time skew. Also offers advantage of programmability with flexibility of reconfiguration, including variation of strengths of optical connections in real time.

  11. Chromium vaporization from mechanically deformed pre-coated interconnects in Solid Oxide Fuel Cells

    NASA Astrophysics Data System (ADS)

    Falk-Windisch, Hannes; Sattari, Mohammad; Svensson, Jan-Erik; Froitzheim, Jan

    2015-11-01

    Cathode poisoning, associated with Cr evaporation from interconnect material, is one of the most important degradation mechanisms in Solid Oxide Fuel Cells when Cr2O3-forming steels are used as the interconnect material. Coating these steels with a thin Co layer has proven to decrease Cr vaporization. To reduce production costs, it is suggested that thin metallic PVD coatings be applied to each steel strip before pressing the material into interconnect shape. This process would enable high volume production without the need for an extra post-coating step. However, when the pre-coated material is mechanically deformed, cracks may form and lower the quality of the coating. In the present study, Chromium volatilization is measured in an air-3% H2O environment at 850 °C for 336 h. Three materials coated with 600 nm Co are investigated and compared to an uncoated material. The effect of deformation is investigated on real interconnects. Microscopy observations reveal the presence of cracks in the order of several μm on the deformed pre-coated steel. However, upon exposure, the cracks can heal and form a continuous surface oxide rich in Co and Mn. As an effect of the rapid healing, no increase in Cr vaporization is measured for the pre-coated material.

  12. Multichannel parallel free-space VCSEL optoelectronic interconnects for digital data transmission and processing

    NASA Astrophysics Data System (ADS)

    Liu, J. Jiang; Lawler, William B.; Riely, Brian P.; Chang, Wayne H.; Shen, Paul H.; Newman, Peter G.; Taysing-Lara, Monica A.; Olver, Kimberly; Koley, Bikash; Dagenais, Mario; Simonis, George J.

    2000-07-01

    A free-space integrated optoelectronic interconnect was built to explore parallel data transmission and processing. This interconnect comprises an 8 X 8 substrate-emitting 980-nm InGaAs/GaAs quantum-well vertical-cavity surface- emitting laser (VCSEL) array and an 8 X 8 InGaAs/InP P-I- N photodetector array. Both VCSEL and detector arrays were flip-chip bonded onto the complimentary metal-oxide- semiconductor (CMOS) circuitry, packaged in pin-grid array packages, and mounted on customized printed circuit boards. Individual data rates as high as 1.2 Gb/s on the VCSEL/CMOS transmitter array were measured. After the optical alignment, we carried out serial and parallel transmissions of digital data and live video scenes through this interconnect between two computers. Images captured by CCD camera were digitized to 8-bit data signals and transferred in serial bit-stream through multiple channels in this parallel VCSEL-detector optical interconnect. A data processing algorithm of edge detection was attempted during the data transfer. Final images were reconstructed back from optically transmitted and processed digital data. Although the transmitter and detector offered much higher data rates, we found that the overall image transfer rate was limited by the CMOS receiver circuits. A new design for the receiver circuitry was accomplished and submitted for fabrication.

  13. Cervical Laminoplasty for Multilevel Cervical Myelopathy

    PubMed Central

    Sayana, Murali Krishna; Jamil, Hassan; Poynton, Ashley

    2011-01-01

    Cervical spondylotic myelopathy can result from degenerative cervical spondylosis, herniated disk material, osteophytes, redundant ligamentum flavum, or ossification of the posterior longitudinal ligament. Surgical intervention for multi-level myelopathy aims to decompress the spinal cord and maintain stability of the cervical spine. Laminoplasty was major surgical advancement as laminectomy resulted in kyphosis and unsatisfactory outcomes. Hirabayashi popularised the expansive open door laminoplasty which was later modified several surgeons. Laminoplasty has changed the way surgeons approach multilevel cervical spondylotic myelopathy. PMID:21991408

  14. Quasi-1D van der Waals materials as high current-density local interconnects (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Stolyarov, Maxim; Aytan, Ece; Bloodgood, Matthew; Salguero, Tina T.; Balandin, Alexander A.

    2016-09-01

    The continuous downscaling of interconnect dimensions in combination with the introduction of low-k dielectrics has increased the number of heat dissipation, integration and reliability challenges in modern electronics. As a result, there is a strong need for new materials that have high current-carrying capacity for applications as nanoscale interconnects. In this presentation, we show that quasi-one-dimensional (1D) van der Waals metals such as TaSe3 have excellent breakdown current density exceeding that of 5 MA/cm2. This value is above that currently achievable in conventional copper or aluminum wires. The quasi-1D van der Waals materials are characterized by strong bonds along one dimension and weak van der Waals bonds along two other dimensions. The material for this study was grown by the chemical vapor transport (CVT) method. Both mechanical and chemical exfoliation methods were used to fabricate nanowires with lateral dimensions below 100 nm. The dimensions of the quasi-1D nanowires were verified with scanning electron microscopy (SEM) and atomic force microscopy (AFM). The metal (Ti/Au) contacts for the electrical characterization were deposited using electron beam evaporation (EBE). The measurements were conducted on a number of prototype interconnects with multiple electric contacts to ensure reproducibility. The obtained results suggest that quasi-1D van der Waals metals present a feasible alternative to conventional copper interconnects in terms of the current-carrying capacity and the breakdown current-density. This work was supported, in part, by the SRC and DARPA through STARnet Center for Function Accelerated nanoMaterial Engineering (FAME).

  15. An interconnecting bus power optimization method combining interconnect wire spacing with wire ordering

    NASA Astrophysics Data System (ADS)

    Zhu, Zhang-Ming; Hao, Bao-Tian; En, Yun-Fei; Yang, Yin-Tang; Li, Yue-Jin

    2011-06-01

    On-chip interconnect buses consume tens of percents of dynamic power in a nanometer scale integrated circuit and they will consume more power with the rapid scaling down of technology size and continuously rising clock frequency, therefore it is meaningful to lower the interconnecting bus power in design. In this paper, a simple yet accurate interconnect parasitic capacitance model is presented first and then, based on this model, a novel interconnecting bus optimization method is proposed. Wire spacing is a process for spacing wires for minimum dynamic power, while wire ordering is a process that searches for wire orders that maximally enhance it. The method, i.e., combining wire spacing with wire ordering, focuses on bus dynamic power optimization with a consideration of bus performance requirements. The optimization method is verified based on various nanometer technology parameters, showing that with 50% slack of routing space, 25.71% and 32.65% of power can be saved on average by the proposed optimization method for a global bus and an intermediate bus, respectively, under a 65-nm technology node, compared with 21.78% and 27.68% of power saved on average by uniform spacing technology. The proposed method is especially suitable for computer-aided design of nanometer scale on-chip buses.

  16. National Offshore Wind Energy Grid Interconnection Study

    SciTech Connect

    Daniel, John P.; Liu, Shu; Ibanez, Eduardo; Pennock, Ken; Reed, Greg; Hanes, Spencer

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States. A total of 54GW of offshore wind was assumed to be the target for the analyses conducted. A variety of issues are considered including: the anticipated staging of offshore wind; the offshore wind resource availability; offshore wind energy power production profiles; offshore wind variability; present and potential technologies for collection and delivery of offshore wind energy to the onshore grid; potential impacts to existing utility systems most likely to receive large amounts of offshore wind; and regulatory influences on offshore wind development. The technologies considered the reliability of various high-voltage ac (HVAC) and high-voltage dc (HVDC) technology options and configurations. The utility system impacts of GW-scale integration of offshore wind are considered from an operational steady-state perspective and from a regional and national production cost perspective.

  17. Message Passing Framework for Globally Interconnected Clusters

    NASA Astrophysics Data System (ADS)

    Hafeez, M.; Asghar, S.; Malik, U. A.; Rehman, A.; Riaz, N.

    2011-12-01

    In prevailing technology trends it is apparent that the network requirements and technologies will advance in future. Therefore the need of High Performance Computing (HPC) based implementation for interconnecting clusters is comprehensible for scalability of clusters. Grid computing provides global infrastructure of interconnecting clusters consisting of dispersed computing resources over Internet. On the other hand the leading model for HPC programming is Message Passing Interface (MPI). As compared to Grid computing, MPI is better suited for solving most of the complex computational problems. MPI itself is restricted to a single cluster. It does not support message passing over the internet to use the computing resources of different clusters in an optimal way. We propose a model that provides message passing capabilities between parallel applications over the internet. The proposed model is based on Architecture for Java Universal Message Passing (A-JUMP) framework and Enterprise Service Bus (ESB) named as High Performance Computing Bus. The HPC Bus is built using ActiveMQ. HPC Bus is responsible for communication and message passing in an asynchronous manner. Asynchronous mode of communication offers an assurance for message delivery as well as a fault tolerance mechanism for message passing. The idea presented in this paper effectively utilizes wide-area intercluster networks. It also provides scheduling, dynamic resource discovery and allocation, and sub-clustering of resources for different jobs. Performance analysis and comparison study of the proposed framework with P2P-MPI are also presented in this paper.

  18. IETI – Isogeometric Tearing and Interconnecting

    PubMed Central

    Kleiss, Stefan K.; Pechstein, Clemens; Jüttler, Bert; Tomar, Satyendra

    2012-01-01

    Finite Element Tearing and Interconnecting (FETI) methods are a powerful approach to designing solvers for large-scale problems in computational mechanics. The numerical simulation problem is subdivided into a number of independent sub-problems, which are then coupled in appropriate ways. NURBS- (Non-Uniform Rational B-spline) based isogeometric analysis (IGA) applied to complex geometries requires to represent the computational domain as a collection of several NURBS geometries. Since there is a natural decomposition of the computational domain into several subdomains, NURBS-based IGA is particularly well suited for using FETI methods. This paper proposes the new IsogEometric Tearing and Interconnecting (IETI) method, which combines the advanced solver design of FETI with the exact geometry representation of IGA. We describe the IETI framework for two classes of simple model problems (Poisson and linearized elasticity) and discuss the coupling of the subdomains along interfaces (both for matching interfaces and for interfaces with T-joints, i.e. hanging nodes). Special attention is paid to the construction of a suitable preconditioner for the iterative linear solver used for the interface problem. We report several computational experiments to demonstrate the performance of the proposed IETI method. PMID:24511167

  19. Aspects of short-range interconnect packaging

    NASA Astrophysics Data System (ADS)

    Wohlfeld, Denis; Brenner, Karl-Heinz

    2012-01-01

    In short-range interconnect applications, one question arises frequently: When should optical solutions be chosen over electrical wiring? The answer to this question of course depends on several factors like costs, performance, reliability, availability of testing equipment and knowledge about optical technologies, and last but not least, it strongly depends on the application itself. Networking in high performance computing (HPC) is one such example. With bit rates around 10 Gbit/s per channel and cable length above 2 m, the high attenuation of electrical cables leads to a clear preference of optical or active optical cables (AOC) for most planned HPC systems. For AOCs, the electro-optical conversion is realized inside the connector housing, while for purely optical cables, the conversion is done at the edge of the board. Proceeding to 25 Gbit/s and higher, attenuation and loss of signal quality become critical. Therefore, either significantly more effort has to be spent on the electrical side, or the package for conversion has to be integrated closer to the chip, thus requiring new packaging technologies. The paper provides a state of the art overview of packaging concepts for short range interconnects, it describes the main challenges of optical package integration and illustrates new concepts and trends in this research area.

  20. Interconnected ponds operation for flood hazard distribution

    NASA Astrophysics Data System (ADS)

    Putra, S. S.; Ridwan, B. W.

    2016-05-01

    The climatic anomaly, which comes with extreme rainfall, will increase the flood hazard in an area within a short period of time. The river capacity in discharging the flood is not continuous along the river stretch and sensitive to the flood peak. This paper contains the alternatives on how to locate the flood retention pond that are physically feasible to reduce the flood peak. The flood ponds were designed based on flood curve number criteria (TR-55, USDA) with the aim of rapid flood peak capturing and gradual flood retuning back to the river. As a case study, the hydrologic condition of upper Ciliwung river basin with several presumed flood pond locations was conceptually designed. A fundamental tank model that reproducing the operation of interconnected ponds was elaborated to achieve the designed flood discharge that will flows to the downstream area. The flood hazard distribution status, as the model performance criteria, will be computed within Ciliwung river reach in Manggarai Sluice Gate spot. The predicted hazard reduction with the operation of the interconnected retention area result had been bench marked with the normal flow condition.

  1. Si photonics technology for future optical interconnection

    NASA Astrophysics Data System (ADS)

    Zheng, Xuezhe; Krishnamoorthy, Ashok V.

    2011-12-01

    Scaling of computing systems require ultra-efficient interconnects with large bandwidth density. Silicon photonics offers a disruptive solution with advantages in reach, energy efficiency and bandwidth density. We review our progress in developing building blocks for ultra-efficient WDM silicon photonic links. Employing microsolder based hybrid integration with low parasitics and high density, we optimize photonic devices on SOI platforms and VLSI circuits on more advanced bulk CMOS technology nodes independently. Progressively, we successfully demonstrated single channel hybrid silicon photonic transceivers at 5 Gbps and 10 Gbps, and 80 Gbps arrayed WDM silicon photonic transceiver using reverse biased depletion ring modulators and Ge waveguide photo detectors. Record-high energy efficiency of less than 100fJ/bit and 385 fJ/bit were achieved for the hybrid integrated transmitter and receiver, respectively. Waveguide grating based optical proximity couplers were developed with low loss and large optical bandwidth to enable multi-layer intra/inter-chip optical interconnects. Thermal engineering of WDM devices by selective substrate removal, together with WDM link using synthetic wavelength comb, we significantly improved the device tuning efficiency and reduced the tuning range. Using these innovative techniques, two orders of magnitude tuning power reduction was achieved. And tuning cost of only a few 10s of fJ/bit is expected for high data rate WDM silicon photonic links.

  2. European Transmission Interconnection; Eurasian power grid

    SciTech Connect

    Posch, J. )

    1991-09-01

    Systems and philosophies perceived on a grand scale, encompassing new ideas, are often characterized as a dream. But in fact, such dreams often lead to the first step to fruitful development. This article is based on a preliminary study of the existing electrical high-tension networks of Western Europe, Eastern Europe and the Soviet Union - which, as explained herein, may be merged into a multinational energy supply system. Such a system would constitute a completely interconnected Eurasian Power Grid. The idea of a Eurasian super grid, spanning from the Atlantic to the Ural and Siberia, is not new. Various studies have been conducted by both western Europe and the Soviet Union on this topic. Our world is currently in an era of extra high voltage (EHV) and ultra high voltage (UHV) electrical systems. This translates into existing UHV lines of 1150 kV which have already been proven in successful operation. Such UHV systems are capable of transmitting thousands of megawatts over a distance of a 1000 miles. Furthermore, national boundaries are not more a hindrance than the challenge of interconnecting complete networks into an overall synchronized working system with load exchange capabilities in all directions.

  3. Approaching Gas Phase Electrodeposition: Process and Optimization to Enable the Self-Aligned Growth of 3D Nanobridge-Based Interconnects.

    PubMed

    Fang, Jun; Schlag, Leslie; Park, Se-Chul; Stauden, Thomas; Pezoldt, Jörg; Schaaf, Peter; Jacobs, Heiko O

    2016-03-02

    A nanowire bonding process referred to as gas-phase electrodeposition is reported to form nanobridge-based interconnects. The process is able to grow free-standing point-to-point electrical connections using metallic wires. As a demonstration, programmable interconnects and an interdigitated electrode array are shown. The process is more material efficient when compared with conventional vapor deposition since the material is directed to the point of use.

  4. Reconfigurable Optical Interconnections Via Dynamic Computer-Generated Holograms

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang (Inventor); Zhou, Shao-Min (Inventor)

    1996-01-01

    A system is presented for optically providing one-to-many irregular interconnections, and strength-adjustable many-to-many irregular interconnections which may be provided with strengths (weights) w(sub ij) using multiple laser beams which address multiple holograms and means for combining the beams modified by the holograms to form multiple interconnections, such as a cross-bar switching network. The optical means for interconnection is based on entering a series of complex computer-generated holograms on an electrically addressed spatial light modulator for real-time reconfigurations, thus providing flexibility for interconnection networks for large-scale practical use. By employing multiple sources and holograms, the number of interconnection patterns achieved is increased greatly.

  5. Reconfigurable optical interconnections via dynamic computer-generated holograms

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang (Inventor); Zhou, Shaomin (Inventor)

    1994-01-01

    A system is proposed for optically providing one-to-many irregular interconnections, and strength-adjustable many-to-many irregular interconnections which may be provided with strengths (weights) w(sub ij) using multiple laser beams which address multiple holograms and means for combining the beams modified by the holograms to form multiple interconnections, such as a cross-bar switching network. The optical means for interconnection is based on entering a series of complex computer-generated holograms on an electrically addressed spatial light modulator for real-time reconfigurations, thus providing flexibility for interconnection networks for largescale practical use. By employing multiple sources and holograms, the number of interconnection patterns achieved is increased greatly.

  6. Variational Integrators for Interconnected Lagrange-Dirac Systems

    NASA Astrophysics Data System (ADS)

    Parks, Helen; Leok, Melvin

    2017-02-01

    Interconnected systems are an important class of mathematical models, as they allow for the construction of complex, hierarchical, multiphysics, and multiscale models by the interconnection of simpler subsystems. Lagrange-Dirac mechanical systems provide a broad category of mathematical models that are closed under interconnection, and in this paper, we develop a framework for the interconnection of discrete Lagrange-Dirac mechanical systems, with a view toward constructing geometric structure-preserving discretizations of interconnected systems. This work builds on previous work on the interconnection of continuous Lagrange-Dirac systems (Jacobs and Yoshimura in J Geom Mech 6(1):67-98, 2014) and discrete Dirac variational integrators (Leok and Ohsawa in Found Comput Math 11(5), 529-562, 2011). We test our results by simulating some of the continuous examples given in Jacobs and Yoshimura (2014).

  7. Alternative Methods for Assessing Mediation in Multilevel Data: The Advantages of Multilevel SEM

    ERIC Educational Resources Information Center

    Preacher, Kristopher J.; Zhang, Zhen; Zyphur, Michael J.

    2011-01-01

    Multilevel modeling (MLM) is a popular way of assessing mediation effects with clustered data. Two important limitations of this approach have been identified in prior research and a theoretical rationale has been provided for why multilevel structural equation modeling (MSEM) should be preferred. However, to date, no empirical evidence of MSEM's…

  8. A Computationally Efficient State Space Approach to Estimating Multilevel Regression Models and Multilevel Confirmatory Factor Models.

    PubMed

    Gu, Fei; Preacher, Kristopher J; Wu, Wei; Yung, Yiu-Fai

    2014-01-01

    Although the state space approach for estimating multilevel regression models has been well established for decades in the time series literature, it does not receive much attention from educational and psychological researchers. In this article, we (a) introduce the state space approach for estimating multilevel regression models and (b) extend the state space approach for estimating multilevel factor models. A brief outline of the state space formulation is provided and then state space forms for univariate and multivariate multilevel regression models, and a multilevel confirmatory factor model, are illustrated. The utility of the state space approach is demonstrated with either a simulated or real example for each multilevel model. It is concluded that the results from the state space approach are essentially identical to those from specialized multilevel regression modeling and structural equation modeling software. More importantly, the state space approach offers researchers a computationally more efficient alternative to fit multilevel regression models with a large number of Level 1 units within each Level 2 unit or a large number of observations on each subject in a longitudinal study.

  9. Fluoropolymer metallization for microelectronic applications

    NASA Astrophysics Data System (ADS)

    Sacher, E.

    1994-11-01

    One of the most important requirements for the fastest microelectronic devices in present use, and for the even faster devices for future use, is the reduction of the signal interconnection delay time to a small fraction of all the switching delay times. The interconnection delay time is the product of the resistance of the metal interconnection and the capacitance of the associated dielectric. One method of lowering this delay time is the use of multilayer devices incorporating low resistivity metals (e.g., Cu) and low capacitance dielectrics (e.g. fluoropolymers). Among the many problems faced in the construction of multilayer devices from these materials is the lack of metal adhesion to flouropolymers. This article attempts to put into perspective the problem of metal adhesion to fluoropolymers by addressing the reason for its necessity. Reviewing the critical properties and techniques and discussing the presently available results.

  10. Application of optical interconnect technology at Lawrence Livermore National Laboratory

    SciTech Connect

    Haigh, R.E.; Lowry, M.E.; McCammon, K.; Hills, R.; Mitchell, R.; Sweider, D.

    1995-08-10

    Optical interconnects will be required to meet the information bandwidth requirements of future communication and computing applications. At Lawrence Livermore National Laboratory, the authors are involved in applying optical interconnect technologies in two distinct application areas: Multi-Gigabit/sec Computer Backplanes and Gigabit/sec Wide Area Networking using Wavelength Division Multiplexing. In this paper, the authors discuss their efforts to integrate optical interconnect technologies into prototype computing and communication systems.

  11. Multilevel Complex Networks and Systems

    NASA Astrophysics Data System (ADS)

    Caldarelli, Guido

    2014-03-01

    Network theory has been a powerful tool to model isolated complex systems. However, the classical approach does not take into account the interactions often present among different systems. Hence, the scientific community is nowadays concentrating the efforts on the foundations of new mathematical tools for understanding what happens when multiple networks interact. The case of economic and financial networks represents a paramount example of multilevel networks. In the case of trade, trade among countries the different levels can be described by the different granularity of the trading relations. Indeed, we have now data from the scale of consumers to that of the country level. In the case of financial institutions, we have a variety of levels at the same scale. For example one bank can appear in the interbank networks, ownership network and cds networks in which the same institution can take place. In both cases the systemically important vertices need to be determined by different procedures of centrality definition and community detection. In this talk I will present some specific cases of study related to these topics and present the regularities found. Acknowledged support from EU FET Project ``Multiplex'' 317532.

  12. Multilevel sequential Monte Carlo samplers

    SciTech Connect

    Beskos, Alexandros; Jasra, Ajay; Law, Kody; Tempone, Raul; Zhou, Yan

    2016-08-24

    Here, we study the approximation of expectations w.r.t. probability distributions associated to the solution of partial differential equations (PDEs); this scenario appears routinely in Bayesian inverse problems. In practice, one often has to solve the associated PDE numerically, using, for instance finite element methods and leading to a discretisation bias, with the step-size level hL. In addition, the expectation cannot be computed analytically and one often resorts to Monte Carlo methods. In the context of this problem, it is known that the introduction of the multilevel Monte Carlo (MLMC) method can reduce the amount of computational effort to estimate expectations, for a given level of error. This is achieved via a telescoping identity associated to a Monte Carlo approximation of a sequence of probability distributions with discretisation levels ${\\infty}$ >h0>h1 ...>hL. In many practical problems of interest, one cannot achieve an i.i.d. sampling of the associated sequence of probability distributions. A sequential Monte Carlo (SMC) version of the MLMC method is introduced to deal with this problem. In conclusion, it is shown that under appropriate assumptions, the attractive property of a reduction of the amount of computational effort to estimate expectations, for a given level of error, can be maintained within the SMC context.

  13. Multilevel sequential Monte Carlo samplers

    DOE PAGES

    Beskos, Alexandros; Jasra, Ajay; Law, Kody; ...

    2016-08-24

    Here, we study the approximation of expectations w.r.t. probability distributions associated to the solution of partial differential equations (PDEs); this scenario appears routinely in Bayesian inverse problems. In practice, one often has to solve the associated PDE numerically, using, for instance finite element methods and leading to a discretisation bias, with the step-size level hL. In addition, the expectation cannot be computed analytically and one often resorts to Monte Carlo methods. In the context of this problem, it is known that the introduction of the multilevel Monte Carlo (MLMC) method can reduce the amount of computational effort to estimate expectations, for a given level of error. This is achieved via a telescoping identity associated to a Monte Carlo approximation of a sequence of probability distributions with discretisation levelsmore » $${\\infty}$$ >h0>h1 ...>hL. In many practical problems of interest, one cannot achieve an i.i.d. sampling of the associated sequence of probability distributions. A sequential Monte Carlo (SMC) version of the MLMC method is introduced to deal with this problem. In conclusion, it is shown that under appropriate assumptions, the attractive property of a reduction of the amount of computational effort to estimate expectations, for a given level of error, can be maintained within the SMC context.« less

  14. Applications of cascade multilevel inverters.

    PubMed

    Peng, Fang-zen; Qian, Zhao-ming

    2003-01-01

    Cascade multilevel inverters have been developed for electric utility applications. A cascade M-level inverter consists of (M-1)/2 H-bridges in which each bridge's dc voltage is supported by its own dc capacitor. The new inverter can: (1) generate almost sinusoidal waveform voltage while only switching one time per fundamental cycle; (2) dispense with multi-pulse inverters' transformers used in conventional utility interfaces and static var compensators; (3) enables direct parallel or series transformer-less connection to medium- and high-voltage power systems. In short, the cascade inverter is much more efficient and suitable for utility applications than traditional multi-pulse and pulse width modulation (PWM) inverters. The authors have experimentally demonstrated the superiority of the new inverter for power supply, (hybrid) electric vehicle (EV) motor drive, reactive power (var) and harmonic compensation. This paper summarizes the features, feasibility, and control schemes of the cascade inverter for utility applications including utility interface of renewable energy, voltage regulation, var compensation, and harmonic filtering in power systems. Analytical, simulated, and experimental results demonstrated the superiority of the new inverters.

  15. Multilevel sequential Monte Carlo samplers

    SciTech Connect

    Beskos, Alexandros; Jasra, Ajay; Law, Kody; Tempone, Raul; Zhou, Yan

    2016-08-24

    Here, we study the approximation of expectations w.r.t. probability distributions associated to the solution of partial differential equations (PDEs); this scenario appears routinely in Bayesian inverse problems. In practice, one often has to solve the associated PDE numerically, using, for instance finite element methods and leading to a discretisation bias, with the step-size level hL. In addition, the expectation cannot be computed analytically and one often resorts to Monte Carlo methods. In the context of this problem, it is known that the introduction of the multilevel Monte Carlo (MLMC) method can reduce the amount of computational effort to estimate expectations, for a given level of error. This is achieved via a telescoping identity associated to a Monte Carlo approximation of a sequence of probability distributions with discretisation levels ${\\infty}$ >h0>h1 ...>hL. In many practical problems of interest, one cannot achieve an i.i.d. sampling of the associated sequence of probability distributions. A sequential Monte Carlo (SMC) version of the MLMC method is introduced to deal with this problem. In conclusion, it is shown that under appropriate assumptions, the attractive property of a reduction of the amount of computational effort to estimate expectations, for a given level of error, can be maintained within the SMC context.

  16. Effect of atomic interconnects on percolation in single-walled carbon nanotube thin film networks.

    PubMed

    Tian, Xiaojuan; Moser, Matthew L; Pekker, Aron; Sarkar, Santanu; Ramirez, Jason; Bekyarova, Elena; Itkis, Mikhail E; Haddon, Robert C

    2014-07-09

    The formation of covalent bonds to single-walled carbon nanotube (SWNT) or graphene surfaces usually leads to a decrease in the electrical conductivity and mobility as a result of the structural rehybridization of the functionalized carbon atoms from sp(2) to sp(3). In the present study, we explore the effect of metal deposition on semiconducting (SC-) and metallic (MT-) SWNT thin films in the vicinity of the percolation threshold and we are able to clearly delineate the effects of weak physisorption, ionic chemisorption with charge transfer, and covalent hexahapto (η(6)) chemisorption on these percolating networks. The results support the idea that for those metals capable of forming bis-hexahapto-bonds, the generation of covalent (η(6)-SWNT)M(η(6)-SWNT) interconnects provides a conducting pathway in the SWNT films and establishes the transition metal bis-hexahapto organometallic bond as an electronically conjugating linkage between graphene surfaces.

  17. Investigation of welded interconnection of large area wraparound contacted silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lott, D. R.

    1984-01-01

    An investigation was conducted to evaluate the welding and temperature cycle testing of large area 5.9 x 5.9 wraparound silicon solar cells utilizing printed circuit substrates with SSC-155 interconnect copper metals and the LMSC Infrared Controlled weld station. An initial group of 5 welded modules containing Phase 2 developmental 5.9 x 5.9 cm cells were subjected to cyclical temperatures of + or 80 C at a rate of 120 cycles per day. Anomalies were noted in the adhesion of the cell contact metallization; therefore, 5 additional modules were fabricated and tested using available Phase I cells with demonstrated contact integrity. Cycling of the later module type through 12,000 cycles indicated the viability of this type of lightweight flexible array concept. This project demonstrated acceptable use of an alternate interconnect copper in combination with large area wraparound cells and emphasized the necessity to implement weld pull as opposed to solder pull procedures at the cell vendors for cells that will be interconnected by welding.

  18. Development and Application of HVOF Sprayed Spinel Protective Coating for SOFC Interconnects

    NASA Astrophysics Data System (ADS)

    Thomann, O.; Pihlatie, M.; Rautanen, M.; Himanen, O.; Lagerbom, J.; Mäkinen, M.; Varis, T.; Suhonen, T.; Kiviaho, J.

    2013-06-01

    Protective coatings are needed for metallic interconnects used in solid oxide fuel cell (SOFC) stacks to prevent excessive high-temperature oxidation and evaporation of chromium species. These phenomena affect the lifetime of the stacks by increasing the area-specific resistance (ASR) and poisoning of the cathode. Protective MnCo2O4 and MnCo1.8Fe0.2O4 coatings were applied on ferritic steel interconnect material (Crofer 22 APU) by high velocity oxy fuel spraying. The substrate-coating systems were tested in long-term exposure tests to investigate their high-temperature oxidation behavior. Additionally, the ASRs were measured at 700 °C for 1000 h. Finally, a real coated interconnect was used in a SOFC single-cell stack for 6000 h. Post-mortem analysis was carried out with scanning electron microscopy. The deposited coatings reduced significantly the oxidation of the metal, exhibited low and stable ASR and reduced effectively the migration of chromium.

  19. Synchrotron X-Ray Microdiffraction Studies of Electromigration in Interconnect lines at the Advanced Light Source

    SciTech Connect

    Tamura, Nobumichi; Chen, Kai; Kunz, Martin

    2009-05-01

    Synchrotron polychromatic X-ray microdiffraction is a particularly suitable technique to study in situ the effect of electromigration in metal interconnects as add spatial resolution to grain orientation and strain sensitivity. This technique has been extensively used at the Advanced Light Source to monitor changes in aluminum and copper interconnect test structures while high-density current is passed into them during accelerated tests at elevated temperature. One of the principal findings is the observation of electromigration-induced plasticity in the metal lines that appear during the very early stages of electromigration. In some of the lines, high density of geometrically necessary dislocation are formed leading to additional diffusion paths causing an enhancement of electromigration effect at test temperature. This paper presents an overview of the principal results obtained from X-ray microdiffraction studies of electromigration effects on aluminum and copper interconnects at the ALS throughout continuous efforts that spanned over a decade (1998-2008) from approximately 40 weeks of combined beamtime.

  20. Thin and Thick Films Materials Based Interconnection Technology for 500 C Operation

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.

    2000-01-01

    Precious metal based thick-film material was used for printed wires, wire bond pads, test lead-attach, and conductive die-attach for high temperature (up to 500 C and beyond) chip level packaging. A SiC Shottky diode with a thin-film coated backside was attached to a ceramic substrate using precious metal based thick-film material as the electrically conductive bonding layer. After a 500-hour soak test in atmospheric oxygen, these basic interconnection elements, including attached test diode survived both electrically and mechanically. The electrical resistance of these interconnections (including thick-film printed wire/pad, bonded wire, and test lead attach) were low and stable at both room and elevated temperatures. The electrical resistance of the die-attach interface estimated by I-V characterization of the attached diode, during and after high temperature heat treatment, remained desirably low over the course of a 500-hour anneal. Further durability testing of this high temperature interconnection technology is also discussed.

  1. Identification of Functionally Interconnected Neurons Using Factor Analysis

    PubMed Central

    Farfán, Fernando D.; Albarracín, Ana L.; Pizá, Alvaro G.; Lucianna, Facundo A.; Felice, Carmelo J.

    2017-01-01

    The advances in electrophysiological methods have allowed registering the joint activity of single neurons. Thus, studies on functional dynamics of complex-valued neural networks and its information processing mechanism have been conducted. Particularly, the methods for identifying neuronal interconnections are in increasing demand in the area of neurosciences. Here, we proposed a factor analysis to identify functional interconnections among neurons via spike trains. This method was evaluated using simulations of neural discharges from different interconnections schemes. The results have revealed that the proposed method not only allows detecting neural interconnections but will also allow detecting the presence of presynaptic neurons without the need of the recording of them. PMID:28491091

  2. Identification of Functionally Interconnected Neurons Using Factor Analysis.

    PubMed

    Soletta, Jorge H; Farfán, Fernando D; Albarracín, Ana L; Pizá, Alvaro G; Lucianna, Facundo A; Felice, Carmelo J

    2017-01-01

    The advances in electrophysiological methods have allowed registering the joint activity of single neurons. Thus, studies on functional dynamics of complex-valued neural networks and its information processing mechanism have been conducted. Particularly, the methods for identifying neuronal interconnections are in increasing demand in the area of neurosciences. Here, we proposed a factor analysis to identify functional interconnections among neurons via spike trains. This method was evaluated using simulations of neural discharges from different interconnections schemes. The results have revealed that the proposed method not only allows detecting neural interconnections but will also allow detecting the presence of presynaptic neurons without the need of the recording of them.

  3. Oscillations in interconnected complex networks under intentional attack

    NASA Astrophysics Data System (ADS)

    Zhang, Wen-Ping; Xia, Yongxiang; Tan, Fei

    2016-01-01

    Many real-world networks are interconnected with each other. In this paper, we study the traffic dynamics in interconnected complex networks under an intentional attack. We find that with the shortest time delay routing strategy, the traffic dynamics can show the stable state, periodic, quasi-periodic and chaotic oscillations, when the capacity redundancy parameter changes. Moreover, compared with isolated complex networks, oscillations always take place in interconnected networks more easily. Thirdly, in interconnected networks, oscillations are affected strongly by the coupling probability and coupling preference.

  4. Compact Interconnection Networks Based on Quantum Dots

    NASA Technical Reports Server (NTRS)

    Fijany, Amir; Toomarian, Nikzad; Modarress, Katayoon; Spotnitz, Matthew

    2003-01-01

    Architectures that would exploit the distinct characteristics of quantum-dot cellular automata (QCA) have been proposed for digital communication networks that connect advanced digital computing circuits. In comparison with networks of wires in conventional very-large-scale integrated (VLSI) circuitry, the networks according to the proposed architectures would be more compact. The proposed architectures would make it possible to implement complex interconnection schemes that are required for some advanced parallel-computing algorithms and that are difficult (and in many cases impractical) to implement in VLSI circuitry. The difficulty of implementation in VLSI and the major potential advantage afforded by QCA were described previously in Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), NASA Tech Briefs, Vol. 25, No. 10 (October 2001), page 42. To recapitulate: Wherever two wires in a conventional VLSI circuit cross each other and are required not to be in electrical contact with each other, there must be a layer of electrical insulation between them. This, in turn, makes it necessary to resort to a noncoplanar and possibly a multilayer design, which can be complex, expensive, and even impractical. As a result, much of the cost of designing VLSI circuits is associated with minimization of data routing and assignment of layers to minimize crossing of wires. Heretofore, these considerations have impeded the development of VLSI circuitry to implement complex, advanced interconnection schemes. On the other hand, with suitable design and under suitable operating conditions, QCA-based signal paths can be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes. The proposed architectures require two advances in QCA-based circuitry beyond basic QCA-based binary

  5. Testing Group Mean Differences of Latent Variables in Multilevel Data Using Multiple-Group Multilevel CFA and Multilevel MIMIC Modeling.

    PubMed

    Kim, Eun Sook; Cao, Chunhua

    2015-01-01

    Considering that group comparisons are common in social science, we examined two latent group mean testing methods when groups of interest were either at the between or within level of multilevel data: multiple-group multilevel confirmatory factor analysis (MG ML CFA) and multilevel multiple-indicators multiple-causes modeling (ML MIMIC). The performance of these methods were investigated through three Monte Carlo studies. In Studies 1 and 2, either factor variances or residual variances were manipulated to be heterogeneous between groups. In Study 3, which focused on within-level multiple-group analysis, six different model specifications were considered depending on how to model the intra-class group correlation (i.e., correlation between random effect factors for groups within cluster). The results of simulations generally supported the adequacy of MG ML CFA and ML MIMIC for multiple-group analysis with multilevel data. The two methods did not show any notable difference in the latent group mean testing across three studies. Finally, a demonstration with real data and guidelines in selecting an appropriate approach to multilevel multiple-group analysis are provided.

  6. Interconnection capacitance models for VLSI circuits

    NASA Astrophysics Data System (ADS)

    Wong, Shyh-Chyi; Liu, Patrick S.; Ru, Jien-Wen; Lin, Shi-Tron

    1998-06-01

    A new set of capacitance models is developed for delay estimation of VLSI interconnections. The set of models is derived for five representative wiring structures, with their combinations covering arbitrary VLSI layouts. A semi-empirical approach is adopted to deal with complicated geometry nature in VLSI and to allow for closed-form capacitance formulas to be developed to provide direct observation of capacitance variation vs process parameters as well as computational efficiency for circuit simulation. The formulas are given explicitly in terms of wire width, wire thickness, dielectric thickness and inter-wire spacing. The models show good agreement with numerical solutions from RAPHAEL and measurement data of fabricated capacitance test structures. The models are further applied and validated on a ring oscillator. It is shown that the frequency of the ring oscillator obtained from HSPICE simulation with our models agrees well with the bench measurement.

  7. Virtual interconnection platform initiative scoping study

    SciTech Connect

    Liu, Yong; Kou, Gefei; Pan, Zuohong; Liu, Yilu; King Jr., Thomas J.

    2016-01-01

    Due to security and liability concerns, the research community has limited access to realistic large-scale power grid models to test and validate new operation and control methodologies. It is also difficult for industry to evaluate the relative value of competing new tools without a common platform for comparison. This report proposes to develop a large-scale virtual power grid model that retains basic features and represents future trends of major U.S. electric interconnections. This model will include realistic power flow and dynamics information as well as a relevant geospatial distribution of assets. This model will be made widely available to the research community for various power system stability and control studies and can be used as a common platform for comparing the efficacies of various new technologies.

  8. Forming electrical interconnections through semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Anthony, T. R.

    1981-01-01

    An information processing system based on CMOS/SOS technology is being developed by NASA to process digital image data collected by satellites. An array of holes is laser drilled in a semiconductor wafer, and a conductor is formed in the holes to fabricate electrical interconnections through the wafers. Six techniques are used to form conductors in the silicon-on-sapphire (SOS) wafers, including capillary wetting, wedge extrusion, wire intersection, electroless plating, electroforming, double-sided sputtering and through-hole electroplating. The respective strengths and weaknesses of these techniques are discussed and compared, with double-sided sputtering and the through-hole plating method achieving best results. In addition, hollow conductors provided by the technique are available for solder refill, providing a natural way of forming an electrically connected stack of SOS wafers.

  9. Microfabricated structures with electrical isolation and interconnections

    NASA Technical Reports Server (NTRS)

    Clark, William A. (Inventor); Juneau, Thor N. (Inventor); Roessig, Allen W. (Inventor); Lemkin, Mark A. (Inventor)

    2001-01-01

    The invention is directed to a microfabricated device. The device includes a substrate that is etched to define mechanical structures at least some of which are anchored laterally to the remainder of the substrate. Electrical isolation at points where mechanical structures are attached to the substrate is provided by filled isolation trenches. Filled trenches may also be used to electrically isolate structure elements from each other at points where mechanical attachment of structure elements is desired. The performance of microelectromechanical devices is improved by 1) having a high-aspect-ratio between vertical and lateral dimensions of the mechanical elements, 2) integrating electronics on the same substrate as the mechanical elements, 3) good electrical isolation among mechanical elements and circuits except where electrical interconnection is desired.

  10. Lower limits of line resistance in nanocrystalline back end of line Cu interconnects

    NASA Astrophysics Data System (ADS)

    Hegde, Ganesh; Bowen, R. Chris; Rodder, Mark S.

    2016-11-01

    The strong non-linear increase in the Cu interconnect line resistance with decreasing linewidth presents a significant obstacle to their continued downscaling. In this letter we use the first principles density functional theory based electronic structure of Cu interconnects to find the lower limits of their line resistance for metal linewidths corresponding to future technology nodes. We find that even in the absence of scattering due to grain boundaries, edge roughness or interfaces, quantum confinement causes a severe increase in the line resistance of Cu. We also find that when the simplest scattering mechanism in the grain boundary scattering dominated limit is added to otherwise coherent electronic transmission in monocrystalline nanowires, the lower limit of line resistance is significantly higher than projected roadmap requirements in the International Technology Roadmap for Semiconductors.

  11. Electric currents in networks of interconnected memristors.

    PubMed

    Nedaaee Oskoee, Ehsan; Sahimi, Muhammad

    2011-03-01

    Chua [IEEE Trans. Circuit Theory 1, 507 (1971).] argued that, in addition to the standard resistors, capacitors, and inductors, there must be a fourth fundamental element in electrical circuits, which he called a memory resistor or memristor. Strukov et al. [Nature (London) 453, 80 (2008)] showed how memristive behavior arises in some thin semiconducting films. Unlike other passive elements, however, a memristor with large sizes cannot be fabricated, because scale up of a memristor to dimensions of the order of microns causes loss of the memristive effect by decreasing the width of the doped region relative to the overall size of the memristor. A microscale memristor is, however, essential to most of the potential applications. One way of fabricating such a microscale memristor without losing the memristive effect is to make a network of very small interconnected memristors. We report the results of numerical simulations of electrical currents in such networks of interconnected memristors, as well as memristors and Ohmic conductors. The memristor networks exhibit a rich variety of interesting properties, including weakly and strongly memristive regimes, a possible first-order transition at the connectivity threshold, generation of second harmonics in the strongly memristive regime, and the universal dependence of the network's strength on the frequency. Moreover, we show that the polarity of the memristors can play an important role in the overall properties of the memristor network, in particular its speed of switching, which may have a potentially important application to faster computers. None of these properties are exhibited by linear resistor networks, or even by nonlinear resistor networks without a memory effect.

  12. Titanium nitride based hybrid plasmonic-photonic waveguides for on-chip plasmonic interconnects

    NASA Astrophysics Data System (ADS)

    Dutta, A.; Saha, S.; Kinsey, N.; Guler, U.; Shalaev, V. M.; Boltasseva, A.

    2017-02-01

    Over the past few decades, photonic technologies have emerged as a promising technology for data communications. They offer advantages such as high data bandwidths at comparable or even lower power consumption than electronics. However, photonic integrated circuits suffer from the diffraction limit of light which is a major obstacle in achieving small device footprints and densely packed on-chip interconnects. In recent years, plasmonics has emerged as a possible solution for densely packed on-chip nanophotonic circuitry. The field of plasmonics deals with oscillations of free electrons in a metal coupled to an electromagnetic field. The large wave-vector associated with these oscillations enables light to be localized in volumes much smaller than the diffraction limit. Consequently, there have been many demonstrations of plasmonic interconnects for on-chip communications, using well known metals such as gold and silver. However these materials are not CMOS compatible and hence their use is not technologically feasible. The growing need for plasmonic materials which are robust, cost-effective, and CMOS-compatible has led to the study of alternate plasmonic materials. For the visible and near infrared ranges, transition metal nitrides have been shown to be suitable metals for plasmonic applications These materials have optical properties comparable to that of gold and are CMOS-compatible, hence, they can be easily integrated into a silicon platform for on-chip applications. In this work, we demonstrate titanium nitride based plasmonic interconnects in an all-solid state geometry which can be easily integrated on a silicon platform.

  13. Dual damascene BEOL processing using multilevel step and flash imprint lithography

    NASA Astrophysics Data System (ADS)

    Chao, Brook H.; Palmieri, Frank; Jen, Wei-Lun; McMichael, D. Hale; Willson, C. Grant; Owens, Jordan; Berger, Rich; Sotoodeh, Ken; Wilks, Bruce; Pham, Joseph; Carpio, Ronald; LaBelle, Ed; Wetzel, Jeff

    2008-03-01

    Step and Flash Imprint Lithography (S-FIL®) in conjunction with Sacrificial Imprint Materials (SIM) shows promise as a cost effective solution to patterning sub 45nm features and is capable of simultaneously patterning two levels of interconnect structures, which provides a high throughput and low cost BEOL process. This paper describes the integration of S-FIL into an industry standard Cu/low-k dual damascene process that is being practiced in the ATDF at Sematech in Austin. The pattern transferring reactive ion etching (RIE) process is the most critical step and was extensively explored in this study. In addition to successful process development, the results provide useful insight into the optimal design of multilevel templates which must take into account the characteristics of both the imaging material and the dielectric layer. The template used in this study incorporates both the via and trench levels of an M2 (Metal 2) test vehicle that incorporates via chains with varying via dimensions, Kelvin test structures, serpentines, etc. The smallest vias on the template are 120nm vias with an aspect ratio of 2.0 and the smallest dense lines are 125nm/175nm with an aspect ratio of 2.9. Two inter-level dielectrics (ILD), Coral® and Black Diamond® were studied. No trench etch stop was incorporated in the ILD film stack. A multi-step, in-situ etching scheme was developed that achieves faithful pattern transfer from the sacrificial imprint material (SIM) into the underlying low k ILD with surprisingly wide process latitude. This multi-step scheme includes the following etch steps: a residual layer open, a via etch, a trench descum, a trench etch, and an SIM removal ash. Among these steps, the trench etch was found to be the most challenging to develop and it holds the key to producing high aspect ratio dual damascene features. An etching chemistry based on two fluorocarbon gases, CF 4 and C 4F 8, was found to be very effective in delivering the desired etch profiles

  14. 14 CFR 29.957 - Flow between interconnected tanks.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... Section 29.957 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System § 29.957 Flow between interconnected tanks. (a) Where tank outlets are interconnected and allow fuel to flow...

  15. 14 CFR 29.957 - Flow between interconnected tanks.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... Section 29.957 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System § 29.957 Flow between interconnected tanks. (a) Where tank outlets are interconnected and allow fuel to flow...

  16. 14 CFR 29.957 - Flow between interconnected tanks.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... Section 29.957 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System § 29.957 Flow between interconnected tanks. (a) Where tank outlets are interconnected and allow fuel to flow...

  17. 14 CFR 29.957 - Flow between interconnected tanks.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... Section 29.957 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System § 29.957 Flow between interconnected tanks. (a) Where tank outlets are interconnected and allow fuel to flow...

  18. 14 CFR 25.701 - Flap and slat interconnection.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... sides of the plane of symmetry must be synchronized by a mechanical interconnection or approved... engines on one side of the plane of symmetry inoperative and the remaining engines at takeoff power. (c... resulting when interconnected flap or slat surfaces on one side of the plane of symmetry are jammed...

  19. 14 CFR 25.701 - Flap and slat interconnection.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... sides of the plane of symmetry must be synchronized by a mechanical interconnection or approved... engines on one side of the plane of symmetry inoperative and the remaining engines at takeoff power. (c... resulting when interconnected flap or slat surfaces on one side of the plane of symmetry are jammed...

  20. 14 CFR 25.701 - Flap and slat interconnection.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... sides of the plane of symmetry must be synchronized by a mechanical interconnection or approved... engines on one side of the plane of symmetry inoperative and the remaining engines at takeoff power. (c... resulting when interconnected flap or slat surfaces on one side of the plane of symmetry are jammed...

  1. 14 CFR 25.701 - Flap and slat interconnection.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... sides of the plane of symmetry must be synchronized by a mechanical interconnection or approved... engines on one side of the plane of symmetry inoperative and the remaining engines at takeoff power. (c... resulting when interconnected flap or slat surfaces on one side of the plane of symmetry are jammed...

  2. 14 CFR 25.701 - Flap and slat interconnection.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... sides of the plane of symmetry must be synchronized by a mechanical interconnection or approved... engines on one side of the plane of symmetry inoperative and the remaining engines at takeoff power. (c... resulting when interconnected flap or slat surfaces on one side of the plane of symmetry are jammed...

  3. 78 FR 14532 - Small Generator Interconnection Agreements and Procedures; Workshop

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-06

    ... Energy Regulatory Commission Small Generator Interconnection Agreements and Procedures; Workshop Take...: https://www.ferc.gov/whats-new/registration/small-generator-03-27-13-form.asp . The purpose of this workshop is to discuss certain topics related to the proposals in the Small Generator Interconnection...

  4. Updating Small Generator Interconnection Procedures for New Market Conditions

    SciTech Connect

    Coddington, M.; Fox, K.; Stanfield, S.; Varnado, L.; Culley, T.; Sheehan, M.

    2012-12-01

    Federal and state regulators are faced with the challenge of keeping interconnection procedures updated against a backdrop of evolving technology, new codes and standards, and considerably transformed market conditions. This report is intended to educate policymakers and stakeholders on beneficial reforms that will keep interconnection processes efficient and cost-effective while maintaining a safe and reliable power system.

  5. ENVIRONMENTAL-HUMAN HEALTH INTERCONNECTIONS: A WORKSHOP REPORT

    EPA Science Inventory

    A Pellston Workshop jointly sponsored by SETAC and SOT to discuss this topic of "Interconnections" was held in June, 2000 in Snowbird, Utah. This workshop was motivated by a deep concern shared by many human health, environmental, and social scientists for the interconnections, ...

  6. 76 FR 35210 - Peetz Logan Interconnect, LLC; Notice of Filing

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-16

    ... From the Federal Register Online via the Government Publishing Office ] DEPARTMENT OF ENERGY Federal Energy Regulatory Commission Peetz Logan Interconnect, LLC; Notice of Filing Take notice that on June 3, 2011, Peetz Logan Interconnect, LLC (PLI) filed a response to a staff deficiency letter...

  7. Determining the Utility Value of Water-Supply Interconnections.

    ERIC Educational Resources Information Center

    Hardman, James L.; Cheremisinoff, Paul N.

    1979-01-01

    This article is the third in a series which discusses a mathematical methodology for evaluating interconnections of water supply systems. The model can be used to analyze the carrying capacity of proposed links or predict the impact of abandoning interconnections. (AS)

  8. ENVIRONMENTAL-HUMAN HEALTH INTERCONNECTIONS: A WORKSHOP REPORT

    EPA Science Inventory

    A Pellston Workshop jointly sponsored by SETAC and SOT to discuss this topic of "Interconnections" was held in June, 2000 in Snowbird, Utah. This workshop was motivated by a deep concern shared by many human health, environmental, and social scientists for the interconnections, ...

  9. Determining the Utility Value of Water-Supply Interconnections.

    ERIC Educational Resources Information Center

    Hardman, James L.; Cheremisinoff, Paul N.

    1979-01-01

    This article is the third in a series which discusses a mathematical methodology for evaluating interconnections of water supply systems. The model can be used to analyze the carrying capacity of proposed links or predict the impact of abandoning interconnections. (AS)

  10. Multilevel modeling in psychosomatic medicine research.

    PubMed

    Myers, Nicholas D; Brincks, Ahnalee M; Ames, Allison J; Prado, Guillermo J; Penedo, Frank J; Benedict, Catherine

    2012-01-01

    The primary purpose of this study is to provide an overview of multilevel modeling for Psychosomatic Medicine readers and contributors. The article begins with a general introduction to multilevel modeling. Multilevel regression modeling at two levels is emphasized because of its prevalence in psychosomatic medicine research. Simulated data sets based on some core ideas from the Familias Unidas effectiveness study are used to illustrate key concepts including communication of model specification, parameter interpretation, sample size and power, and missing data. Input and key output files from Mplus and SAS are provided. A cluster randomized trial with repeated measures (i.e., three-level regression model) is then briefly presented with simulated data based on some core ideas from a cognitive-behavioral stress management intervention in prostate cancer.

  11. Propensity score weighting with multilevel data.

    PubMed

    Li, Fan; Zaslavsky, Alan M; Landrum, Mary Beth

    2013-08-30

    Propensity score methods are being increasingly used as a less parametric alternative to traditional regression to balance observed differences across groups in both descriptive and causal comparisons. Data collected in many disciplines often have analytically relevant multilevel or clustered structure. The propensity score, however, was developed and has been used primarily with unstructured data. We present and compare several propensity-score-weighted estimators for clustered data, including marginal, cluster-weighted, and doubly robust estimators. Using both analytical derivations and Monte Carlo simulations, we illustrate bias arising when the usual assumptions of propensity score analysis do not hold for multilevel data. We show that exploiting the multilevel structure, either parametrically or nonparametrically, in at least one stage of the propensity score analysis can greatly reduce these biases. We applied these methods to a study of racial disparities in breast cancer screening among beneficiaries of Medicare health plans.

  12. Multilevel Modeling in Psychosomatic Medicine Research

    PubMed Central

    Myers, Nicholas D.; Brincks, Ahnalee M.; Ames, Allison J.; Prado, Guillermo J.; Penedo, Frank J.; Benedict, Catherine

    2012-01-01

    The primary purpose of this manuscript is to provide an overview of multilevel modeling for Psychosomatic Medicine readers and contributors. The manuscript begins with a general introduction to multilevel modeling. Multilevel regression modeling at two-levels is emphasized because of its prevalence in psychosomatic medicine research. Simulated datasets based on some core ideas from the Familias Unidas effectiveness study are used to illustrate key concepts including: communication of model specification, parameter interpretation, sample size and power, and missing data. Input and key output files from Mplus and SAS are provided. A cluster randomized trial with repeated measures (i.e., three-level regression model) is then briefly presented with simulated data based on some core ideas from a cognitive behavioral stress management intervention in prostate cancer. PMID:23107843

  13. Multilevel modelling and public health policy.

    PubMed

    Leyland, Alastair H; Groenewegen, Peter P

    2003-01-01

    Multilevel modelling is a statistical technique that extends ordinary regression analysis to the situation where the data are hierarchical. Such data form an increasingly common evidence base for public health policy, and as such it is important that policy makers should be aware of this methodology. This paper therefore lays out the a basic description of multilevel modelling, discusses the problems of alternative approaches, and details the relevance for public health policy before describing which levels are relevant and illustrating the different kinds of hypotheses that can be tested using multilevel modelling. A series of examples is used throughout the paper. These relate to regional variations in the incidence of heart disease, the allocation of health resources, the relationship between neighbourhood disorder and mental health, the demand-control model in occupational health, and a school intervention to prevent cardiovascular disease.

  14. Modelling of asymmetrical interconnect T-tree laminated on flexible substrate

    NASA Astrophysics Data System (ADS)

    Ravelo, Blaise

    2015-11-01

    A fast and accurate behavioral modelling of asymmetrical microstrip tree printed on plastic substrate is investigated. The methodology for extracting the asymmetrical tree transfer responses based on the ABCD-matrix analysis is presented. The elements of the interconnect T-tree are constituted by transmission lines (TLs) defined by their characteristic impedance and physical length. The distributed tree network can be assumed as a single input multiple output (SIMO) topology. By considering the circuit equivalent between the electrical path from the tree input and output, the single input single output (SISO) simplified circuit can be established. In order to determine the frequency response of the interconnect tree system, the elementary TLs constituting the tree branches are modelled with their equivalent frequency dependent RLCG network. The novelty of the present paper is the application of the model to the microstrip structure printed on the plastic substrate by analyzing the influence of the metallization conductivity. As proof of concept (POC), a single input and three output distributed interconnect T-tree having branches presented physical lengths from 3 cm to 20 cm was designed. The POC was printed on the Cu metal deposited plastic Kapton substrate. Then, the frequency dependent per unit length resistance, inductance, capacitance and conductance of the elementary branches of the T-tree from DC to 10 GHz were extracted. By implementing the behavioral model of the circuit, the frequency- and time-domain responses of the proposed asymmetrical T-tree are computed. Then, the analyses of the asymmetrical T-tree responses in function of the thin film conductivity of the microstrip interconnect lines were discussed. In addition, time domain analysis enabling to predict the influence of the deposited metallic ink conductivity on the signal integrity is realized by considering a mixed signal corresponding to the digital data "010110000" having 0.5 Gbps rate

  15. A multilevel preconditioner for domain decomposition boundary systems

    SciTech Connect

    Bramble, J.H.; Pasciak, J.E.; Xu, Jinchao.

    1991-12-11

    In this note, we consider multilevel preconditioning of the reduced boundary systems which arise in non-overlapping domain decomposition methods. It will be shown that the resulting preconditioned systems have condition numbers which be bounded in the case of multilevel spaces on the whole domain and grow at most proportional to the number of levels in the case of multilevel boundary spaces without multilevel extensions into the interior.

  16. Optical backplane interconnect switch for data processors and computers

    NASA Technical Reports Server (NTRS)

    Hendricks, Herbert D.; Benz, Harry F.; Hammer, Jacob M.

    1989-01-01

    An optoelectronic integrated device design is reported which can be used to implement an all-optical backplane interconnect switch. The switch is sized to accommodate an array of processors and memories suitable for direct replacement into the basic avionic multiprocessor backplane. The optical backplane interconnect switch is also suitable for direct replacement of the PI bus traffic switch and at the same time, suitable for supporting pipelining of the processor and memory. The 32 bidirectional switchable interconnects are configured with broadcast capability for controls, reconfiguration, and messages. The approach described here can handle a serial interconnection of data processors or a line-to-link interconnection of data processors. An optical fiber demonstration of this approach is presented.

  17. Optical backplane interconnect switch for data processors and computers

    NASA Technical Reports Server (NTRS)

    Hendricks, Herbert D.; Benz, Harry F.; Hammer, Jacob M.

    1989-01-01

    An optoelectronic integrated device design is reported which can be used to implement an all-optical backplane interconnect switch. The switch is sized to accommodate an array of processors and memories suitable for direct replacement into the basic avionic multiprocessor backplane. The optical backplane interconnect switch is also suitable for direct replacement of the PI bus traffic switch and at the same time, suitable for supporting pipelining of the processor and memory. The 32 bidirectional switchable interconnects are configured with broadcast capability for controls, reconfiguration, and messages. The approach described here can handle a serial interconnection of data processors or a line-to-link interconnection of data processors. An optical fiber demonstration of this approach is presented.

  18. Solid-state energy storage module employing integrated interconnect board

    DOEpatents

    Rouillard, Jean; Comte, Christophe; Daigle, Dominik; Hagen, Ronald A.; Knudson, Orlin B.; Morin, Andre; Ranger, Michel; Ross, Guy; Rouillard, Roger; St-Germain, Philippe; Sudano, Anthony; Turgeon, Thomas A.

    2003-11-04

    The present invention is directed to an improved electrochemical energy storage device. The electrochemical energy storage device includes a number of solid-state, thin-film electrochemical cells which are selectively interconnected in series or parallel through use of an integrated interconnect board. The interconnect board is typically disposed within a sealed housing which also houses the electrochemical cells, and includes a first contact and a second contact respectively coupled to first and second power terminals of the energy storage device. The interconnect board advantageously provides for selective series or parallel connectivity with the electrochemical cells, irrespective of electrochemical cell position within the housing. Fuses and various electrical and electromechanical devices, such as bypass, equalization, and communication devices for example, may also be mounted to the interconnect board and selectively connected to the electrochemical cells.

  19. Solid-state energy storage module employing integrated interconnect board

    DOEpatents

    Rouillard, Jean; Comte, Christophe; Daigle, Dominik; Hagen, Ronald A.; Knudson, Orlin B.; Morin, Andre; Ranger, Michel; Ross, Guy; Rouillard, Roger; St-Germain, Philippe; Sudano, Anthony; Turgeon, Thomas A.

    2004-09-28

    An electrochemical energy storage device includes a number of solid-state thin-film electrochemical cells which are selectively interconnected in series or parallel through use of an integrated interconnect board. The interconnect board is typically disposed within a sealed housing which also houses the electrochemical cells, and includes a first contact and a second contact respectively coupled to first and second power terminals of the energy storage device. The interconnect board advantageously provides for selective series or parallel connectivity with the electrochemical cells, irrespective of electrochemical cell position within the housing. Fuses and various electrical and electro-mechanical devices, such as bypass, equalization, and communication devices for example, may also be mounted to the interconnect board and selectively connected to the electrochemical cells.

  20. Fuel cell electrode interconnect contact material encapsulation and method

    DOEpatents

    Derose, Anthony J.; Haltiner, Jr., Karl J.; Gudyka, Russell A.; Bonadies, Joseph V.; Silvis, Thomas W.

    2016-05-31

    A fuel cell stack includes a plurality of fuel cell cassettes each including a fuel cell with an anode and a cathode. Each fuel cell cassette also includes an electrode interconnect adjacent to the anode or the cathode for providing electrical communication between an adjacent fuel cell cassette and the anode or the cathode. The interconnect includes a plurality of electrode interconnect protrusions defining a flow passage along the anode or the cathode for communicating oxidant or fuel to the anode or the cathode. An electrically conductive material is disposed between at least one of the electrode interconnect protrusions and the anode or the cathode in order to provide a stable electrical contact between the electrode interconnect and the anode or cathode. An encapsulating arrangement segregates the electrically conductive material from the flow passage thereby, preventing volatilization of the electrically conductive material in use of the fuel cell stack.

  1. Ultra-low energy photoreceivers for optical interconnects

    NASA Astrophysics Data System (ADS)

    Going, Ryan Wayne

    Optical interconnects are increasingly important for our communication and data center systems, and are forecasted to be an essential component of future computers. In order to meet these future demands, optical interconnects must be improved to consume less power than they do today. To do this, both more efficient transmitters and more sensitive receivers must be developed. This work addresses the latter, focusing on device level improvements to tightly couple a low capacitance photodiode with the first stage transistor of the receiver as a single phototransistor device. First I motivate the need for a coupled phototransistor using a simple circuit model which shows how receiver sensitivity is determined by photodiode capacitance and the length of wire connecting it to the first transistor in a receiver amplifier. Then I describe our use of the unique rapid melt growth technique, which is used to integrate crystalline germanium on silicon photonics substrates without an epitaxial reactor. The resulting material quality is demonstrated with high quality (0.95 A/W, 40+ GHz) germanium photodiodes on silicon waveguides. Next I describe two germanium phototransistors I have developed. One is a germanium- gated MOSFET on silicon photonics which has up to 18 A/W gate-controlled responsivity at 1550 nm. Simulations show how MOSFET scaling rules can be easily applied to increase both speed and sensitivity. The second is a floating base germanium bipolar phototransistor on silicon photonics with a 15 GHz gain x bandwidth product. The photoBJT also has a clear scaling path, and it is proposed to create a separate gain and absorption region photoBJT to realize the maximum benefit of scaling the BJT without negatively affecting its absorption and photocarrier collection. Following this design a 120 GHz gain x bandwidth photoBJT is simulated. Finally I present a metal-cavity, which can have over 50% quantum efficiency absorption in sub-100 aF germanium photodiodes, which

  2. Co3O4/Sm-Doped CeO2/Co3O4 Trilayer Coating on AISI 441 Interconnect for Solid Oxide Fuel Cells.

    PubMed

    Shen, Fengyu; Lu, Kathy

    2017-02-22

    In this work, a novel Co/Sm-doped CeO2 (SDC)/Co trilayer of ∼6 μm is deposited by alternating electrodeposition and electrophoresis and oxidized to a Co3O4/SDC/Co3O4 trilayer structure. This coating is unique and effective in the following aspects: (1) The area specific resistance of the coated interconnect is more stable and lower than that of the uncoated interconnect after thermal treatment at 800 °C for 400 h. (2) The Co3O4/SDC/Co3O4 coating layer can effectively inhibit Cr diffusion and evaporation and significantly slow the oxidation rate of the interconnect. (3) The Sm0.5Sr0.5Co0.2Fe0.8O3 cathode in the electrolyte/cathode/interconnect half-cell retains its initial stoichiometry after 100 h of the thermal treatment. Subsequently, the ohmic resistance RΩ, high frequency polarization resistance RH, and low frequency polarization resistance RL of the half-cell with the Co3O4/SDC/Co3O4 coated interconnect are all smaller than those of the half-cell with the bare interconnect. The Co3O4/SDC/Co3O4 coating layer has great advantages to be used as a protective layer for the metallic interconnect in solid oxide fuel cells to improve cell performance, stability, and durability.

  3. Hypernetworks: Multidimensional relationships in multilevel systems

    NASA Astrophysics Data System (ADS)

    Johnson, J. H.

    2016-09-01

    Networks provide a powerful way of modelling the dynamics of complex systems. Going beyond binary relations, embracing n-ary relations in network science can generalise many structures. This starts with hypergraphs and their Galois structures. Simplicial complexes generalise hypergraphs by adding orientation. Their multidimensional q-connectivity structure generalises connectivity in networks. Hypersimplices generalise simplices by making the relational structure explicit in the notation. This gives a new way of representing multilevel systems and their dynamics, leading to a new fragment-recombine operator to model the complex dynamics of interacting multilevel systems.

  4. Overcoming erasure errors with multilevel systems

    NASA Astrophysics Data System (ADS)

    Muralidharan, Sreraman; Zou, Chang-Ling; Li, Linshu; Wen, Jianming; Jiang, Liang

    2017-01-01

    We investigate the usage of highly efficient error correcting codes of multilevel systems to protect encoded quantum information from erasure errors and implementation to repetitively correct these errors. Our scheme makes use of quantum polynomial codes to encode quantum information and generalizes teleportation based error correction for multilevel systems to correct photon losses and operation errors in a fault-tolerant manner. We discuss the application of quantum polynomial codes to one-way quantum repeaters. For various types of operation errors, we identify different parameter regions where quantum polynomial codes can achieve a superior performance compared to qubit based quantum parity codes.

  5. Multilevel transport solution of LWR reactor cores

    SciTech Connect

    Jose Ignacio Marquez Damian; Cassiano R.E. de Oliveira; HyeonKae Park

    2008-09-01

    This work presents a multilevel approach for the solution of the transport equation in typical LWR assemblies and core configurations. It is based on the second-order, even-parity formulation of the transport equation, which is solved within the framework provided by the finite element-spherical harmonics code EVENT. The performance of the new solver has been compared with that of the standard conjugate gradient solver for diffusion and transport problems on structured and unstruc-tured grids. Numerical results demonstrate the potential of the multilevel scheme for realistic reactor calculations.

  6. Laser Direct Routing for High Density Interconnects

    NASA Astrophysics Data System (ADS)

    Moreno, Wilfrido Alejandro

    The laser restructuring of electronic circuits fabricated using standard Very Large Scale Integration (VLSI) process techniques, is an excellent alternative that allows low-cost quick turnaround production with full circuit similarity between the Laser Restructured prototype and the customized product for mass production. Laser Restructurable VLSI (LRVLSI) would allow design engineers the capability to interconnect cells that implement generic logic functions and signal processing schemes to achieve a higher level of design complexity. LRVLSI of a particular circuit at the wafer or packaged chip level is accomplished using an integrated computer controlled laser system to create low electrical resistance links between conductors and to cut conductor lines. An infrastructure for rapid prototyping and quick turnaround using Laser Restructuring of VLSI circuits was developed to meet three main parallel objectives: to pursue research on novel interconnect technologies using LRVLSI, to develop the capability of operating in a quick turnaround mode, and to maintain standardization and compatibility with commercially available equipment for feasible technology transfer. The system is to possess a high degree of flexibility, high data quality, total controllability, full documentation, short downtime, a user-friendly operator interface, automation, historical record keeping, and error indication and logging. A specially designed chip "SLINKY" was used as the test vehicle for the complete characterization of the Laser Restructuring system. With the use of Design of Experiment techniques the Lateral Diffused Link (LDL), developed originally at MIT Lincoln Laboratories, was completely characterized and for the first time a set of optimum process parameters was obtained. With the designed infrastructure fully operational, the priority objective was the search for a substitute for the high resistance, high current leakage to substrate, and relatively low density Lateral

  7. Mapping of interconnection of climate risks

    NASA Astrophysics Data System (ADS)

    Yokohata, Tokuta; Tanaka, Katsumasa; Nishina, Kazuya; Takanashi, Kiyoshi; Emori, Seita; Kiguchi, Masashi; Iseri, Yoshihiko; Honda, Yasushi; Okada, Masashi; Masaki, Yoshimitsu; Yamamoto, Akitomo; Shigemitsu, Masahito; Yoshimori, Masakazu; Sueyoshi, Tetsuo; Iwase, Kenta; Hanasaki, Naota; Ito, Akihiko; Sakurai, Gen; Iizumi, Toshichika; Oki, Taikan

    2015-04-01

    Anthropogenic climate change possibly causes various impacts on human society and ecosystem. Here, we call possible damages or benefits caused by the future climate change as "climate risks". Many climate risks are closely interconnected with each other by direct cause-effect relationship. In this study, the major climate risks are comprehensively summarized based on the survey of studies in the literature using IPCC AR5 etc, and their cause-effect relationship are visualized by a "network diagram". This research is conducted by the collaboration between the experts of various fields, such as water, energy, agriculture, health, society, and eco-system under the project called ICA-RUS (Integrated Climate Assessment - Risks, Uncertainties and Society). First, the climate risks are classified into 9 categories (water, energy, food, health, disaster, industry, society, ecosystem, and tipping elements). Second, researchers of these fields in our project survey the research articles, and pick up items of climate risks, and possible cause-effect relationship between the risk items. A long list of the climate risks is summarized into ~130, and that of possible cause-effect relationship between the risk items is summarized into ~300, because the network diagram would be illegible if the number of the risk items and cause-effect relationship is too large. Here, we only consider the risks that could occur if climate mitigation policies are not conducted. Finally, the chain of climate risks is visualized by creating a "network diagram" based on a network graph theory (Fruchtman & Reingold algorithm). Through the analysis of network diagram, we find that climate risks at various sectors are closely related. For example, the decrease in the precipitation under the global climate change possibly causes the decrease in river runoff and the decrease in soil moisture, which causes the changes in crop production. The changes in crop production can have an impact on society by

  8. Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide

    NASA Astrophysics Data System (ADS)

    Shin, Gwang Hyuk; Kim, Choong-Ki; Bang, Gyeong Sook; Kim, Jong Yun; Jang, Byung Chul; Koo, Beom Jun; Woo, Myung Hun; Choi, Yang-Kyu; Choi, Sung-Yool

    2016-09-01

    An increasing demand for nonvolatile memory has driven extensive research on resistive switching memory because it uses simple structures with high density, fast switching speed, and low power consumption. To improve the storage density, the application of multilevel cells is among the most promising solutions, including three-dimensional cross-point array architectures. Two-dimensional nanomaterials have several advantages as resistive switching media, including flexibility, low cost, and simple fabrication processes. However, few reports exist on multilevel nonvolatile memory and its switching mechanism. We herein present a multilevel resistive switching memory based on graphene oxide (GO) and MoS2 fabricated by a simple spin-coating process. Metallic 1T-MoS2 nanosheets, chemically exfoliated by Li intercalation, were successfully embedded between two GO layers as charge-trapping sites. The resulting stacks of GO/MoS2/GO exhibited excellent nonvolatile memory performance with at least four resistance states, >102 endurance cycles, and >104 s retention time. Furthermore, the charge transport mechanism was systematically investigated through the analysis of low-frequency 1/f noise in various resistance states, which could be modulated by the input voltage bias in the negative differential resistance region. Accordingly, we propose a strategy to achieve multilevel nonvolatile memory in which the stacked layers of two-dimensional nanosheets are utilized as resistive and charge-storage materials.

  9. Monte Carlo Method Applied to the ABV Model of an Interconnect Alloy

    NASA Astrophysics Data System (ADS)

    Dahoo, P. R.; Linares, J.; Chiruta, D.; Chong, C.; Pougnet, P.; Meis, C.; El Hami, A.

    2016-08-01

    A Monte Carlo (MC) simulation of a 2D microscopic ABV (metal A, metal B and void V) Ising model of an interconnect alloy is performed by taking into account results of Finite Element methods (FEM) calculations on correlated void-thermal effects. The evolution of a homogeneous structure of a binary alloy containing a small percentage of voids is studied with temperature cycling. The diffusion of voids and segregation of A type or B type metals is a function of the relative interaction energy of the different pairs AA, BB, AB, AV and BV, the initial concentrations of A, B and V and local heating effect due to the presence of clusters of voids. Voids segregates in a matrix of A type, of B type or AB type and form large localized clusters or smaller delocalized ones of different shapes.

  10. Multilevel photonic modules for millimeter-wave phased-array antennas

    NASA Astrophysics Data System (ADS)

    Paolella, Arthur C.; Joshi, Abhay M.; Wright, James G.; Coryell, Louis A.

    1998-11-01

    Optical signal distribution for phased array antennas in communication system is advantageous to designers. By distributing the microwave and millimeter wave signal through optical fiber there is the potential for improved performance and lower weight. In addition when applied to communication satellites this weight saving translates into substantially reduced launch costs. The goal of the Phase I Small Business Innovation Research (SBIR) Program is the development of multi-level photonic modules for phased array antennas. The proposed module with ultimately comprise of a monolithic, InGaAs/InP p-i-n photodetector-p-HEMT power amplifier, opto-electronic integrated circuit, that has 44 GHz bandwidth and output power of 50 mW integrated with a planar antenna. The photodetector will have a high quantum efficiency and will be front-illuminated, thereby improved optical performance. Under Phase I a module was developed using standard MIC technology with a high frequency coaxial feed interconnect.

  11. Interconnection and Simulation Issues in Haptics.

    PubMed

    Borghesan, Gianni; Macchelli, Alessandro; Melchiorri, Claudio

    2010-01-01

    In this paper, three results are presented concerning certain computational/control aspects, crucial for the proper behavior of haptic devices. The first one is a novel technique for a real-time simulation of virtual environments, which is able to preserve the energetic behavior of the simulated physical system and to avoid undesired effects related to unstable behaviors of the haptic device. The proposed real-time integration method is simpler, in terms of computational complexity, than similar solutions known in the literature, and provides an additional insight when "faulty conditions" are met. Second, a new method for the energy-consistent interconnection of discrete-time physical systems, implemented by algorithms running at different frequencies (i.e., multirate systems), is illustrated. Multirate systems are very common in haptics, since the frequency, at which the control law of the haptic interface is executed, is usually higher than the frequency of the simulation of the virtual environment. Finally, the third result presented in this paper concerns the problem of energy generation due to the time discretization in the acquisition of the haptic interface position. Similarly, to the previous case, a technique for an energy-consistent analog/digital conversion is proposed. All these methodologies have been validated, both by simulations and experiments.

  12. Design of free space interconnected signal processor

    NASA Astrophysics Data System (ADS)

    Murdocca, Miles; Stone, Thomas

    1993-12-01

    Progress is described on a collaborative effort between the Photonics Center at Rome Laboratory (RL), Griffiss AFB and Rutgers University, through the RL Expert Science and Engineering (ES&E) program. The goal of the effort is to develop a prototype random access memory (RAM) that can be used in a signal processor for a computing model that consists of cascaded arrays of optical logic gates interconnected in free space with regular patterns. The effort involved the optical and architectural development of a cascadable optical logic system in which microlaser pumped S-SEED devices serve as logic gates. At the completion of the contract, two gate-level layouts of the module were completed which were created in collaboration with RL personnel. The basic layout of the optical system has been developed, and key components have been tested. The delayed delivery of microlaser arrays precluded completion of the processor during the contract period, but preliminary testing was made possible through the use of other microlaser devices.

  13. Interconnected Cavernous Structure of Bacterial Fruiting Bodies

    DOE PAGES

    Harvey, Cameron W.; Du, Huijing; Xu, Zhiliang; ...

    2012-12-27

    The formation of spore-filled fruiting bodies by myxobacteria is a fascinating case of multicelular self-organization by bacteria. The organization of Myxococcus xanthus into fruiting bodies has long been studied not only as an important example of collective motion of bacteria, but also as a simplified model for developmental morphogenesis. Sporulation within the nascent fruiting body requires signaling between moving cells in order that the rod-shaped self-propelled cells differentiate into spores at the appropriate time. Probing the three-dimensional structure of myxobacteria fruiting bodies has previously presented a challenge due to Imitations at different imaging methods. A new technique using Infrared Opticalmore » Coherence Tomography (OCT) revealed previously unknown details of the Internal structure of M. xanthus fruiting bodies consisting of interconnected pockets of relative nigh and low spore density regions. Here, to make sense of the experimentally observed structure, modeling and computer simulations were used to test a hypothesized mechanism that could produce high density pockets of spores. The mechanism consists of self-propelled cells aligning with each other and signaling by end-to-end contact to coordinate the process of differentiation resulting in a pattern of clusters observed in the experiment. The Integration of novel OCT experimental techniques with computational simulations can provide new insight Into the mechanisms that can give rise to the pattern formation seen In other biological systems such as dlctyostelids, social amoeba known to form multicellular aggregates observed as slugs under starvation conditions.« less

  14. Manipulator interactive design with interconnected flexible elements

    NASA Technical Reports Server (NTRS)

    Singh, R. P.; Likins, P. W.

    1983-01-01

    This paper describes the development of an analysis tool for the interactive design of control systems for manipulators and similar electro-mechanical systems amenable to representation as structures in a topological chain. The chain consists of a series of elastic bodies subject to small deformations and arbitrary displacements. The bodies are connected by hinges which permit kinematic constraints, control, or relative motion with six degrees of freedom. The equations of motion for the chain configuration are derived via Kane's method, extended for application to interconnected flexible bodies with time-varying boundary conditions. A corresponding set of modal coordinates has been selected. The motion equations are imbedded within a simulation that transforms the vector-dyadic equations into scalar form for numerical integration. The simulation also includes a linear, time-invariant controler specified in transfer function format and a set of sensors and actuators that interface between the structure and controller. The simulation is driven by an interactive set-up program resulting in an easy-to-use analysis tool.

  15. Backplane photonic interconnect modules with optical jumpers

    NASA Astrophysics Data System (ADS)

    Glebov, Alexei L.; Lee, Michael G.; Yokouchi, Kishio

    2005-03-01

    Prototypes of optical interconnect (OI) modules for backplane applications are presented. The transceivers attached to the linecards E/O convert the signals that are passed to and from the backplane by optical jumpers terminated with MTP-type connectors. The connectors plug into adaptors attached to the backplane and the microlens arrays mounted in the adaptors couple the light between the fibers and waveguides. Planar polymer channel waveguides with 30-50 μm cross-sections route the optical signals across the board with propagation losses as low as 0.05 dB/cm @ 850 nm. The 45¦-tapered integrated micromirrors reflect the light in and out of the waveguide plane with the loss of 0.8 dB per mirror. The connector displacement measurements indicate that the adaptor lateral assembly accuracy can be at least +/-10 μm for the excess loss not exceeding 1 dB. Insertion losses of the test modules with integrated waveguides, 45¦ mirrors, and pluggable optical jumper connectors are about 5 dB. Eye diagrams at 10.7 Gb/s have typical width and height of 70 ps and 400 mV, respectively, and jitter of about 20 ps.

  16. Ceramic Interconnects with Low Sintering Temperature

    NASA Technical Reports Server (NTRS)

    Zhong, Zhi-Min; Goldsby, Jon C.

    2004-01-01

    Ceramic interconnects for use in solid oxide he1 cells are expected to operate between 900 to approximately 1000 C, sinter below 1400 C to allow co-firing and meet a number thermal mechanical requirements. The pervoskite type (ABO3) lanthanum chromite based materials have emerged as a leading candidate that will meet these criteria by varying the composition on the A and B sites. A need therefore exists to determine this material's temperature dependent electrical and mechanical properties with respect to these site substitutions. In this investigation oxide powders were prepared by the glycine-nitrate process. Ionic substitutions were carried out on A sites with Ca or Sr, and B sites with Co and Al, respectively. Only stoichiometric compositions were considered for the sake of stability. The powders and their ability to sinter were investigated by XRD, SEM, dilatometry and density measurements. The sintered materials were further examined by SEM, thermal expansion and electric conductivity measurements in order to elucidate the resulting microstructure, electrical and mechanical properties. In addition quantum mechanical calculations were performed to obtain insight into the effects of these dopants on the materials electronic band structure and lattice parameter.

  17. Multimode siloxane polymer components for optical interconnects

    NASA Astrophysics Data System (ADS)

    Bamiedakis, Nikolaos; Beals, Joseph, IV; Penty, Richard V.; White, Ian H.; DeGroot, Jon v., Jr.; Clapp, Terry V.; De Shazer, David

    2009-02-01

    This paper presents an overview of multimode waveguides and waveguide components formed from siloxane polymer materials which are suitable for use in optical interconnection applications. The components can be cost-effectively integrated onto conventional PCBs and offer increased functionality in optical transmission. The multimode waveguides exhibit low loss (0.04 dB/cm at 850 nm) and low crosstalk (< -30 dB) performance, large alignment tolerances and negligible mode mixing for short waveguide lengths. Error-free data transmission at 10 Gb/s over 1.4 m long waveguides has been successfully demonstrated. Waveguide crossings exhibit very low excess losses, below 0.01 dB/crossing, and excellent crosstalk performance. Low loss is obtained for waveguide bends with radii of curvature larger than 8 mm and 6 mm for 90° and S-shaped bends respectively. High-uniformity splitting is achieved with multimode Y-splitters even in the presence of input misalignments. Y-combiners are shown to benefit from the multimode nature of the waveguides allowing low loss combining (4 dB for an 8×1 device). A large range of power splitting ratios between 30% and 75% is achieved with multimode coupler devices. Examples of system applications benefiting from the use of these components are briefly presented including a terabit capacity optical backplane, a radio-over-fibre multicasting system and a SCM passive optical network.

  18. Adaptive optical interconnects: the ADDAPT project

    NASA Astrophysics Data System (ADS)

    Henker, Ronny; Pliva, Jan; Khafaji, Mahdi; Ellinger, Frank; Toifl, Thomas; Offrein, Bert; Cevrero, Alessandro; Oezkaya, Ilter; Seifried, Marc; Ledentsov, Nikolay; Kropp, Joerg-R.; Shchukin, Vitaly; Zoldak, Martin; Halmo, Leos; Turkiewicz, Jaroslaw; Meredith, Wyn; Eddie, Iain; Georgiades, Michael; Charalambides, Savvas; Duis, Jeroen; van Leeuwen, Pieter

    2015-09-01

    Existing optical networks are driven by dynamic user and application demands but operate statically at their maximum performance. Thus, optical links do not offer much adaptability and are not very energy-efficient. In this paper a novel approach of implementing performance and power adaptivity from system down to optical device, electrical circuit and transistor level is proposed. Depending on the actual data load, the number of activated link paths and individual device parameters like bandwidth, clock rate, modulation format and gain are adapted to enable lowering the components supply power. This enables flexible energy-efficient optical transmission links which pave the way for massive reductions of CO2 emission and operating costs in data center and high performance computing applications. Within the FP7 research project Adaptive Data and Power Aware Transceivers for Optical Communications (ADDAPT) dynamic high-speed energy-efficient transceiver subsystems are developed for short-range optical interconnects taking up new adaptive technologies and methods. The research of eight partners from industry, research and education spanning seven European countries includes the investigation of several adaptive control types and algorithms, the development of a full transceiver system, the design and fabrication of optical components and integrated circuits as well as the development of high-speed, low loss packaging solutions. This paper describes and discusses the idea of ADDAPT and provides an overview about the latest research results in this field.

  19. A stochastic model for interconnected neurons.

    PubMed

    Cottrell, M; Piat, F; Rospars, J P

    1997-01-01

    A model is proposed to describe the collective behavior of a biologically plausible neural network, composed of interconnected spiking neurons which separately receive external stationary stimulations. The spiking dynamics of each neuron is represented by an hourglass metaphor. This network model was first studied in a special case where the connections are only inhibitory (Cottrell, 1988, 1992). We study the network dynamics as a function of the parameters which quantify the strengths of both inhibitory and excitatory connections. We show that the model exhibits two kinds of limit states. In the first states (convergent case), the system is ergodic and all neurons have a positive mean firing rate. In the other states (divergent case), some neurons become definitively inactive while the sub-network of the active neurons is ergodic. The patterns which result from these divergent states can be seen as a neural coding of the external stimulation by the network. This property is applied to the olfactory system to produce a code for an odor. The role of inhibitory connections in odor discrimination is studied.

  20. Interconnected Cavernous Structure of Bacterial Fruiting Bodies

    PubMed Central

    Harvey, Cameron W.; Du, Huijing; Xu, Zhiliang; Kaiser, Dale; Aranson, Igor; Alber, Mark

    2012-01-01

    The formation of spore-filled fruiting bodies by myxobacteria is a fascinating case of multicellular self-organization by bacteria. The organization of Myxococcus xanthus into fruiting bodies has long been studied not only as an important example of collective motion of bacteria, but also as a simplified model for developmental morphogenesis. Sporulation within the nascent fruiting body requires signaling between moving cells in order that the rod-shaped self-propelled cells differentiate into spores at the appropriate time. Probing the three-dimensional structure of myxobacteria fruiting bodies has previously presented a challenge due to limitations of different imaging methods. A new technique using Infrared Optical Coherence Tomography (OCT) revealed previously unknown details of the internal structure of M. xanthus fruiting bodies consisting of interconnected pockets of relative high and low spore density regions. To make sense of the experimentally observed structure, modeling and computer simulations were used to test a hypothesized mechanism that could produce high-density pockets of spores. The mechanism consists of self-propelled cells aligning with each other and signaling by end-to-end contact to coordinate the process of differentiation resulting in a pattern of clusters observed in the experiment. The integration of novel OCT experimental techniques with computational simulations can provide new insight into the mechanisms that can give rise to the pattern formation seen in other biological systems such as dictyostelids, social amoeba known to form multicellular aggregates observed as slugs under starvation conditions. PMID:23300427

  1. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOEpatents

    Jansen, Kai W.; Maley, Nagi

    2000-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  2. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOEpatents

    Jansen, Kai W.; Maley, Nagi

    2001-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  3. Fabrication and Electrical Characterization of Multilevel Aluminum Interconnects Used to Achieve Silicon-Hybrid Wafer-Scale Integration.

    DTIC Science & Technology

    1987-12-01

    Nitin Parekh and his colleagues at the Xerox Palo Alto Research Center described this procedure: a low viscosity liquid is spin coated to form a...of Polyimides in VLSI Fabrication," Polyimides -- Synthesis, Characterization, and Applications," Volume 2, edited by K. L. Mittal . New York: Plenum

  4. A sewing-enabled stitch-and-transfer method for robust, ultra-stretchable, conductive interconnects

    NASA Astrophysics Data System (ADS)

    Rahimi, Rahim; Ochoa, Manuel; Yu, Wuyang; Ziaie, Babak

    2014-09-01

    Fabricating highly stretchable and robust electrical interconnects at low-cost remains an unmet challenge in stretchable electronics. Previously reported stretchable interconnects require complicated fabrication processes with resulting devices exhibiting limited stretchability, poor reliability, and large gauge factors. Here, we demonstrate a novel sew-and-transfer method for rapid fabrication of low-cost, highly stretchable interconnects. Using a commercial sewing machine and double-thread stitch with one of the threads being water soluble polyvinyl alcohol (PVA), thin zigzag-pattern metallic wires are sewn into a polymeric film and are subsequently transferred onto a stretchable elastomeric substrate by dissolving PVA in warm water. The resulting structures exhibit extreme stretchability (exceeding 500% strain for a zigzag angle of 18 °) and robustness (capable of withstanding repeated stretch-and-release cycles of 15000 at 110% strain, 50000 at 55% strain, and  > 120000 at 30% strain without any noticeable change in resistance even at maximum strain levels). Using this technique, we demonstrate a stretchable inductive strain sensor for monitoring balloon expansion in a Foley urinary catheter capable of detecting the balloon diameter change from 9 mm to 38 mm with an average sensitivity of 4 nH/mm.

  5. Thermal Growth and Performance of Manganese Cobaltite Spinel Protection Layers on Ferritic Stainless Steel SOFC Interconnects

    SciTech Connect

    Yang, Zhenguo; Xia, Guanguang; Simner, Steven P.; Stevenson, Jeffry W.

    2005-08-01

    To protect solid oxide fuel cells (SOFCs) from chromium poisoning and improve metallic interconnect stability, manganese cobaltite spinel protection layers with a nominal composition of Mn1.5Co1.5O4 were thermally grown on Crofer22 APU, a ferritic stainless steel. Thermal, electrical and electrochemical investigations indicated that the spinel protection layers not only significantly decreased the contact area specific resistance (ASR) between a LSF cathode and the stainless steel interconnect, but also inhibited the sub-scale growth on the stainless steel by acting as a barrier to the inward diffusion of oxygen. A long-term thermal cycling test demonstrated excellent structural and thermomechanical stability of these spinel protection layers, which also acted as a barrier to outward chromium cation diffusion to the interconnect surface. The reduction in the contact ASR and prevention of Cr migration achieved by application of the spinel protection layers on ferritic stainless steel resulted in improved stability and electrochemical performance of SOFCs.

  6. A Multilevel Transaction Problem for Multilevel Secure Database Systems and its Solution for the Replicated Architecture

    DTIC Science & Technology

    1992-01-01

    interesting a research issue. An algorithm for this case, using a multiversion technique, will be the subject of future work. In addition, there is a...34 Multiversion Concurrency Control for Multilevel Secure Database Systems" in Proceedings of the IEEE Symposium on Security and Privacy, pp. 369-383...Oakland, CA May 1990. 7. William T. Maimone and Ira B. Greenberg, "Single-Level Multiversion Schedulers for Multilevel Secure Database Systems" in

  7. Engineering applications of heuristic multilevel optimization methods

    NASA Technical Reports Server (NTRS)

    Barthelemy, Jean-Francois M.

    1989-01-01

    Some engineering applications of heuristic multilevel optimization methods are presented and the discussion focuses on the dependency matrix that indicates the relationship between problem functions and variables. Coordination of the subproblem optimizations is shown to be typically achieved through the use of exact or approximate sensitivity analysis. Areas for further development are identified.

  8. Efficiently Exploring Multilevel Data with Recursive Partitioning

    ERIC Educational Resources Information Center

    Martin, Daniel P.; von Oertzen, Timo; Rimm-Kaufman, Sara E.

    2015-01-01

    There is an increasing number of datasets with many participants, variables, or both, in education and other fields that often deal with large, multilevel data structures. Once initial confirmatory hypotheses are exhausted, it can be difficult to determine how best to explore the dataset to discover hidden relationships that could help to inform…

  9. Single-Level and Multilevel Mediation Analysis

    ERIC Educational Resources Information Center

    Tofighi, Davood; Thoemmes, Felix

    2014-01-01

    Mediation analysis is a statistical approach used to examine how the effect of an independent variable on an outcome is transmitted through an intervening variable (mediator). In this article, we provide a gentle introduction to single-level and multilevel mediation analyses. Using single-level data, we demonstrate an application of structural…

  10. Differential Item Functioning from a Multilevel Perspective.

    ERIC Educational Resources Information Center

    van den Bergh, Huub; And Others

    The term differential item functioning (DIF) refers to whether or not the same psychological constructs are measured across different groups. If an item does not measure the same skills or subskills in different populations, it is said to function differentially or to display item bias. A multilevel approach to DIF is proposed. In such a model,…

  11. Using Multilevel Modeling in Counseling Research

    ERIC Educational Resources Information Center

    Lynch, Martin F.

    2012-01-01

    This conceptual and practical overview of multilevel modeling (MLM) for researchers in counseling and development provides guidelines on setting up SPSS to perform MLM and an example of how to present the findings. It also provides a discussion on how counseling and developmental researchers can use MLM to address their own research questions.…

  12. New multilevel codes over GF(q)

    NASA Technical Reports Server (NTRS)

    Wu, Jiantian; Costello, Daniel J., Jr.

    1992-01-01

    Set partitioning to multi-dimensional signal spaces over GF(q), particularly GF sup q-1(q) and GF sup q (q), and show how to construct both multi-level block codes and multi-level trellis codes over GF(q). Two classes of multi-level (n, k, d) block codes over GF(q) with block length n, number of information symbols k, and minimum distance d sub min greater than or = d, are presented. These two classes of codes use Reed-Solomon codes as component codes. They can be easily decoded as block length q-1 Reed-Solomon codes or block length q or q + 1 extended Reed-Solomon codes using multi-stage decoding. Many of these codes have larger distances than comparable q-ary block codes, as component codes. Low rate q-ary convolutional codes, work error correcting convolutional codes, and binary-to-q-ary convolutional codes can also be used to construct multi-level trellis codes over GF(q) or binary-to-q-ary trellis codes, some of which have better performance than the above block codes. All of the new codes have simple decoding algorithms based on hard decision multi-stage decoding.

  13. A Practical Guide to Multilevel Modeling

    ERIC Educational Resources Information Center

    Peugh, James L.

    2010-01-01

    Collecting data from students within classrooms or schools, and collecting data from students on multiple occasions over time, are two common sampling methods used in educational research that often require multilevel modeling (MLM) data analysis techniques to avoid Type-1 errors. The purpose of this article is to clarify the seven major steps…

  14. The Economic Cost of Homosexuality: Multilevel Analyses

    ERIC Educational Resources Information Center

    Baumle, Amanda K.; Poston, Dudley, Jr.

    2011-01-01

    This article builds on earlier studies that have examined "the economic cost of homosexuality," by using data from the 2000 U.S. Census and by employing multilevel analyses. Our findings indicate that partnered gay men experience a 12.5 percent earnings penalty compared to married heterosexual men, and a statistically insignificant earnings…

  15. The Economic Cost of Homosexuality: Multilevel Analyses

    ERIC Educational Resources Information Center

    Baumle, Amanda K.; Poston, Dudley, Jr.

    2011-01-01

    This article builds on earlier studies that have examined "the economic cost of homosexuality," by using data from the 2000 U.S. Census and by employing multilevel analyses. Our findings indicate that partnered gay men experience a 12.5 percent earnings penalty compared to married heterosexual men, and a statistically insignificant earnings…

  16. Single-Level and Multilevel Mediation Analysis

    ERIC Educational Resources Information Center

    Tofighi, Davood; Thoemmes, Felix

    2014-01-01

    Mediation analysis is a statistical approach used to examine how the effect of an independent variable on an outcome is transmitted through an intervening variable (mediator). In this article, we provide a gentle introduction to single-level and multilevel mediation analyses. Using single-level data, we demonstrate an application of structural…

  17. Engineering applications of heuristic multilevel optimization methods

    NASA Technical Reports Server (NTRS)

    Barthelemy, Jean-Francois M.

    1988-01-01

    Some engineering applications of heuristic multilevel optimization methods are presented and the discussion focuses on the dependency matrix that indicates the relationship between problem functions and variables. Coordination of the subproblem optimizations is shown to be typically achieved through the use of exact or approximate sensitivity analysis. Areas for further development are identified.

  18. Engineering applications of heuristic multilevel optimization methods

    NASA Technical Reports Server (NTRS)

    Barthelemy, Jean-Francois M.

    1989-01-01

    Some engineering applications of heuristic multilevel optimization methods are presented and the discussion focuses on the dependency matrix that indicates the relationship between problem functions and variables. Coordination of the subproblem optimizations is shown to be typically achieved through the use of exact or approximate sensitivity analysis. Areas for further development are identified.

  19. Noise analysis of a transimpedance amplifier for short-distance free-space optical interconnects

    NASA Astrophysics Data System (ADS)

    Al-Ababneh, Nedal; Haddad, Oday

    2010-04-01

    We consider the design of a metal-oxide semiconductor field effect transistor-based transimpedance amplifier that represents the front end of an optical receiver for optimum noise performance in a lensless, free-space optical interconnects system. The optical diffraction noise and the electrical front-end circuitry noise are considered as the two main noise sources for the design optimization. We show that the capacitance of the photodetector diode as well as the input capacitance of the transimpedance amplifier can be used as design parameters to minimize the total noise.

  20. [The testing and verification for interconnect faults based on cluster FPGA configuration].

    PubMed

    Duan, Cheng-Hu; Jia, Jian-Ge

    2005-05-01

    We have developed a hierarchical approach to define a set of FPGA configurations to solve the interconnect testing problem. This technique enables the detection, testing and verification of bridging faults involving intracluster interconnect and extracluster interconnect to be done easily.