Crystallization of the glassy grain boundary phase in silicon nitride ceramics

NASA Technical Reports Server (NTRS)

Drummond, Charles H., III

1991-01-01

The role was studied of the intergranular glassy phase in silicon nitride as-processed with yttria as a sintering aid. The microstructure, crystallization, and viscosity of the glassy phase were areas studied. Crystallization of the intergranular glassy phase to more refractory crystalline phases should improve the high temperature mechanical properties of the silicon nitride. The addition of a nucleating agent will increase the rate of crystallization. The measurement of the viscosity of the glassy phase will permit the estimation of the high temperature deformation of the silicon nitride.

Multiple-Quantum Transitions and Charge-Induced Decoherence of Donor Nuclear Spins in Silicon

NASA Astrophysics Data System (ADS)

Franke, David P.; Pflüger, Moritz P. D.; Itoh, Kohei M.; Brandt, Martin S.

2017-06-01

We study single- and multiquantum transitions of the nuclear spins of an ensemble of ionized arsenic donors in silicon and find quadrupolar effects on the coherence times, which we link to fluctuating electrical field gradients present after the application of light and bias voltage pulses. To determine the coherence times of superpositions of all orders in the 4-dimensional Hilbert space, we use a phase-cycling technique and find that, when electrical effects were allowed to decay, these times scale as expected for a fieldlike decoherence mechanism such as the interaction with surrounding Si 29 nuclear spins.

Stationary phase deposition based on onium salts

DOEpatents

Wheeler, David R [Albuquerque, NM; Lewis, Patrick R [Albuquerque, NM; Dirk, Shawn M [Albuquerque, NM; Trudell, Daniel E [Albuquerque, NM

2008-01-01

Onium salt chemistry can be used to deposit very uniform thickness stationary phases on the wall of a gas chromatography column. In particular, the stationary phase can be bonded to non-silicon based columns, especially microfabricated metal columns. Non-silicon microfabricated columns may be manufactured and processed at a fraction of the cost of silicon-based columns. In addition, the method can be used to phase-coat conventional capillary columns or silicon-based microfabricated columns.

Phase-shifter using submicron silicon waveguide couplers with ultra-small electro-mechanical actuator.

PubMed

Ikeda, Taro; Takahashi, Kazunori; Kanamori, Yoshiaki; Hane, Kazuhiro

2010-03-29

Phase shifter is an important part of optical waveguide circuits as used in interferometer. However, it is not always easy to generate a large phase shift in a small region. Here, a variable phase-shifter operating as delay-line of silicon waveguide was designed and fabricated by silicon micromachining. The proposed phase-shifter consists of a freestanding submicron-wide silicon waveguide with two waveguide couplers and an ultrasmall silicon comb-drive actuator. The position of the freestanding waveguide is moved by the actuator to vary the total optical path. Phase-shift was measured in a Mach-Zehnder interferometer to be 3.0pi at the displacement of 1.0 mum at the voltage of 31 V. The dimension of the fabricated device is 50microm wide and 85microm long.

Accurate determination of electronic transport properties of silicon wafers by nonlinear photocarrier radiometry with multiple pump beam sizes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Qian; University of the Chinese Academy of Sciences, Beijing 100039; Li, Bincheng, E-mail: bcli@uestc.ac.cn

2015-12-07

In this paper, photocarrier radiometry (PCR) technique with multiple pump beam sizes is employed to determine simultaneously the electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) of silicon wafers. By employing the multiple pump beam sizes, the influence of instrumental frequency response on the multi-parameter estimation is totally eliminated. A nonlinear PCR model is developed to interpret the PCR signal. Theoretical simulations are performed to investigate the uncertainties of the estimated parameter values by investigating the dependence of a mean square variance on the corresponding transport parameters and compared to that obtainedmore » by the conventional frequency-scan method, in which only the frequency dependences of the PCR amplitude and phase are recorded at single pump beam size. Simulation results show that the proposed multiple-pump-beam-size method can improve significantly the accuracy of the determination of the electronic transport parameters. Comparative experiments with a p-type silicon wafer with resistivity 0.1–0.2 Ω·cm are performed, and the electronic transport properties are determined simultaneously. The estimated uncertainties of the carrier lifetime, diffusion coefficient, and front surface recombination velocity are approximately ±10.7%, ±8.6%, and ±35.4% by the proposed multiple-pump-beam-size method, which is much improved than ±15.9%, ±29.1%, and >±50% by the conventional frequency-scan method. The transport parameters determined by the proposed multiple-pump-beam-size PCR method are in good agreement with that obtained by a steady-state PCR imaging technique.« less

Postfabrication Phase Error Correction of Silicon Photonic Circuits by Single Femtosecond Laser Pulses

DOE PAGES

Bachman, Daniel; Chen, Zhijiang; Wang, Christopher; ...

2016-11-29

Phase errors caused by fabrication variations in silicon photonic integrated circuits are an important problem, which negatively impacts device yield and performance. This study reports our recent progress in the development of a method for permanent, postfabrication phase error correction of silicon photonic circuits based on femtosecond laser irradiation. Using beam shaping technique, we achieve a 14-fold enhancement in the phase tuning resolution of the method with a Gaussian-shaped beam compared to a top-hat beam. The large improvement in the tuning resolution makes the femtosecond laser method potentially useful for very fine phase trimming of silicon photonic circuits. Finally, wemore » also show that femtosecond laser pulses can directly modify silicon photonic devices through a SiO 2 cladding layer, making it the only permanent post-fabrication method that can tune silicon photonic circuits protected by an oxide cladding.« less

Multiple emulsions as soft templates for the synthesis of multifunctional silicone porous particles.

PubMed

Vilanova, Neus; Kolen'ko, Yury V; Solans, Conxita; Rodríguez-Abreu, Carlos

2015-01-01

Multiple emulsion templating is a versatile strategy for the synthesis of porous particles. The present work addresses the synthesis of multifunctional poly(dimethylsiloxane) porous particles using multiple water-in-oil-in-water emulsions as soft templates with an oil phase constituted by a crosslinkable poly(dimethylsiloxane) (PDMS) oil. Herewith, the impact of the viscosity of PDMS oil (i.e., molecular weight) on the properties of both the emulsion templates and the resulting particles was evaluated. The viscosity of PDMS oil has a strong effect on the size and polydispersity of the emulsion templates as well as on the mechanical properties of the derived particles. The elastic modulus can be tuned by mixing PDMS oils of different viscosities to form bimodal crosslinked networks. Iron oxide nanoparticles can be readily incorporated into the emulsion templates to provide additional functionalities to the silicone particles, such as magnetic separation or magnetic hyperthermia. The synthesized composite magnetic particles were found to be useful as recoverable absorbent materials (e.g., for oil spills) by taking advantage of their high buoyancy and high hydrophobicity. Copyright © 2014 Elsevier Inc. All rights reserved.

Oil-in-oil emulsions stabilised solely by solid particles.

PubMed

Binks, Bernard P; Tyowua, Andrew T

2016-01-21

A brief review of the stabilisation of emulsions of two immiscible oils is given. We then describe the use of fumed silica particles coated with either hydrocarbon or fluorocarbon groups in acting as sole stabilisers of emulsions of various vegetable oils with linear silicone oils (PDMS) of different viscosity. Transitional phase inversion of emulsions, containing equal volumes of the two oils, from silicone-in-vegetable (S/V) to vegetable-in-silicone (V/S) occurs upon increasing the hydrophobicity of the particles. Close to inversion, emulsions are stable to coalescence and gravity-induced separation for at least one year. Increasing the viscosity of the silicone oil enables stable S/V emulsions to be prepared even with relatively hydrophilic particles. Predictions of emulsion type from calculated contact angles of a silica particle at the oil-oil interface are in agreement with experiment provided a small polar contribution to the surface energy of the oils is included. We also show that stable multiple emulsions of V/S/V can be prepared in a two-step procedure using two particle types of different hydrophobicity. At fixed particle concentration, catastrophic phase inversion of emulsions from V/S to S/V can be effected by increasing the volume fraction of vegetable oil. Finally, in the case of sunflower oil + 20 cS PDMS, the study is extended to particles other than silica which differ in chemical type, particle size and particle shape. Consistent with the above findings, we find that only sufficiently hydrophobic particles (clay, zinc oxide, silicone, calcium carbonate) can act as efficient V/S emulsion stabilisers.

Use of silicon in liquid sintered silicon nitrides and sialons

DOEpatents

Raj, Rishi; Baik, Sunggi

1984-12-11

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

XANES analyses of silicon crystalline irradiated by nitrogen/oxygen ions.

PubMed

Yoshida, T; Hara, T; Li, T; Yoshida, H; Tanabe, T

2001-03-01

X-ray absorption techniques have been applied to the characterization of 5 keV nitrogen / oxygen ions implanted silicon samples. The depth selective measurement of XANES by recording in PEY mode and the quantitative analysis by superposition of XANES spectra were carried out to elucidate the depth profile of implanted ions. It has been revealed that the silicon nitride phase were formed in silicon after prolonged N+ irradiation and it extended over the deep part of the damaged region from the surface. On the other hand, for the O+ irradiation, silicon dioxide phase were produced only in the shallow part of the damaged region, i.e., the silicon dioxide phase likely broke off during the irradiation.

Silicon nitride equation of state

NASA Astrophysics Data System (ADS)

Brown, Robert C.; Swaminathan, Pazhayannur K.

2017-01-01

This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

77 FR 35425 - Crystalline Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-13

... Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of Countervailing Duty... silicon photovoltaic cells and modules, provided for in subheadings 8501.31.80, 8501.61.00, 8507.20.80... photovoltaic cells, and modules, laminates, and panels, consisting of crystalline silicon photovoltaic cells...

Use of silicon in liquid sintered silicon nitrides and sialons

DOEpatents

Raj, R.; Baik, S.

1984-12-11

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

Silicon Nitride Equation of State

NASA Astrophysics Data System (ADS)

Swaminathan, Pazhayannur; Brown, Robert

2015-06-01

This report presents the development a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4) . Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonalβ-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products and then combined with the single component solid models to study the global phase diagram. Sponsored by the NASA Goddard Space Flight Center Living With a Star program office.

Microscopic studies of polycrystalline nanoparticle growth in free space

NASA Astrophysics Data System (ADS)

Mohan, A.; Kaiser, M.; Verheijen, M. A.; Schropp, R. E. I.; Rath, J. K.

2017-06-01

We have extensively studied by multiple microscopic techniques the growth and crystallization of silicon nanoparticles in pulsed SiH4/Ar plasmas. We observe that the crystallinity of the particles can be tuned from amorphous to crystalline by altering the plasma ON time, tON. Three phases can be identified as a function of tON. Microscopic studies reveal that, in the initial gas phase (phase I) single particles of polycrystalline nature are formed which according to our hypothesis grow out of a single nucleus. The individual crystallites of the polycrystalline particles become bigger crystalline regions which marks the onset of cauliflower shaped particles (phase II). At longer tON (phase III) distinct cauliflower particles are formed by the growth of these crystalline regions by local epitaxy.

Results from the PHOBOS experiment at RHIC

NASA Astrophysics Data System (ADS)

Phobos Collaboration; Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Decowski, M. P.; GarcíA, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Heintzelman, G. A.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; HolyńSki, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; McLeod, D.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sagerer, J.; Sarin, P.; Sawicki, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S. F.; Sarin, P.; Sawicki, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tang, J.-L.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L. H.; Wosiek, B.; WoźNiak, K.; Wuosmaa, A. H.; Wysłouch, B.; Zhang, J.

2004-04-01

PHOBOS is one of the four experiments at the Relativistic Heavy Ion Collider measuringp + p, d + Au, andAu + Au collisions over a broad range of energies. PHOBOS is a silicon-pad based detector with a 4π multiplicity detector and a high resolution mid-rapidity spectrometer, along with other detectors (time-of-flight walls, proton and zero degree calorimeters). PHOBOS is able to measure particles at low transverse momentum, spectra, flow, particle ratios, and multiplicity over a large region of phase space. A comparison of results forAu + Au andd + Au collisions at√SNN = 220GeV will be discussed.

Effects of Impurities and Processing on Silicon Solar Cells, Phase 3

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R.; Blais, P. D.; Rohatgi, A.; Campbell, R. B.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

1979-01-01

Results of the 14th quarterly report are presented for a program designed to assess the effects of impurities, thermochemical processes and any impurity process interactions on the performance of terrestrial silicon solar cells. The Phase 3 effort encompasses: (1) potential interactions between impurities and thermochemical processing of silicon; (2) impurity-cell performance relationships in n-base silicon; (3) effect of contaminants introduced during silicon production, refining or crystal growth on cell performance; (4) effects of nonuniform impurity distributions in large area silicon wafers; and (5) a preliminary study of the permanence of impurity effects in silicon solar cells.

Microwave plasma synthesis of Si/Ge and Si/WSi2 nanoparticles for thermoelectric applications

NASA Astrophysics Data System (ADS)

Petermann, Nils; Schneider, Tom; Stötzel, Julia; Stein, Niklas; Weise, Claudia; Wlokas, Irenäus; Schierning, Gabi; Wiggers, Hartmut

2015-08-01

The utilization of microwave-based plasma systems enables a contamination-free synthesis of highly specific nanoparticles in the gas phase. A reactor setup allowing stable, long-term operation was developed with the support of computational fluid dynamics. This paper highlights the prospects of gas-phase plasma synthesis to produce specific materials for bulk thermoelectrics. Taking advantage of specific plasma reactor properties such as Coulomb repulsion in combination with gas temperatures considerably higher than 1000 K, spherical and non-aggregated nanoparticles of multiple compositions are accessible. Different strategies towards various nanostructured composites and alloys are discussed. It is shown that, based on doped silicon/germanium alloys and composites, thermoelectric materials with zT values up to almost unity can be synthesized in one step. First experimental results concerning silicon/tungsten silicide thermoelectrics applying the nanoparticle-in-alloy idea are presented indicating that this concept might work. However, it is found that tungsten silicides show a surprising sinter activity more than 1000 K below their melting temperature.

Method for rapid, controllable growth and thickness, of epitaxial silicon films

DOEpatents

Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

2009-10-13

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Multiple Aromaticity and Antiaromaticity in Silicon Clusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhai, Hua JIN.; Kuznetsov, A E.; Boldyrev, Alexander I.

A series of silicon clusters containing four atoms but with different charge states (Si{sub 4}{sup 2+}, Si{sub 4}, Si{sub 4}{sup 2-}, and NaSi{sub 4}{sup -}) were studied by photoelectron spectroscopy and ab initio calculations. Structure evolution and chemical bonding in this series were interpreted in terms of aromaticity and antiaromaticity, which allowed the prediction of how structures of the four-atom silicon clusters change upon addition or removal of two electrons. It is shown that Si{sub 4}{sup 2+} is square-planar, analogous to the recently discovered aromatic Al{sub 4}{sup 2-} cluster. Upon addition of two electrons, neutral Si{sub 4} becomes {sigma}-antiaromatic andmore » exhibits a rhombus distortion. Adding two more electrons to Si{sub 4} leads to two energetically close structures of Si{sub 4}{sup 2-}: either a double antiaromatic parallelogram structure or an aromatic system with a butterfly distortion. Because of the electronic instability of doubly charged Si{sub 4}{sup 2-}, a stabilizing cation (Na{sup +}) was used to produce Si{sub 4}{sup 2-} in the gas phase in the form of Na{sup +}[Si{sub 4}{sup 2-}], which was characterized experimentally by photoelectron spectroscopy. Multiple antiaromaticity in the parallelogram Na{sup +}[Si{sub 4}{sup 2-}] species is highly unusual.« less

Features of the phase composition and morphology of the particles of sialon synthesized from silicon and aluminum nitrides

NASA Astrophysics Data System (ADS)

Ivicheva, S. N.; Lysenkov, A. S.; Ovsyannikov, N. A.; Titov, D. D.; Kargin, Yu F.

2018-04-01

The phase composition and morphological features of sialons were studied under the same conditions of firing (duration, temperature) using different initial components, silicon nitride, aluminum nitride, and a mixture of silicon nitrides and aluminum with the application of nitrides of the corresponding oxide (aluminum or silicon) sol-gel method. The effect of the initial reagents composition on the phase composition of the final product and the morphological features of the sialon powders obtained in a single firing step in a nitrogen atmosphere is shown.

Laser-induced phase separation of silicon carbide

PubMed Central

Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

2016-01-01

Understanding the phase separation mechanism of solid-state binary compounds induced by laser–material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system. PMID:27901015

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bachman, Daniel; Chen, Zhijiang; Wang, Christopher

Phase errors caused by fabrication variations in silicon photonic integrated circuits are an important problem, which negatively impacts device yield and performance. This study reports our recent progress in the development of a method for permanent, postfabrication phase error correction of silicon photonic circuits based on femtosecond laser irradiation. Using beam shaping technique, we achieve a 14-fold enhancement in the phase tuning resolution of the method with a Gaussian-shaped beam compared to a top-hat beam. The large improvement in the tuning resolution makes the femtosecond laser method potentially useful for very fine phase trimming of silicon photonic circuits. Finally, wemore » also show that femtosecond laser pulses can directly modify silicon photonic devices through a SiO 2 cladding layer, making it the only permanent post-fabrication method that can tune silicon photonic circuits protected by an oxide cladding.« less

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

PubMed Central

Zhou, Shengqiang; Liu, Fang; Prucnal, S.; Gao, Kun; Khalid, M.; Baehtz, C.; Posselt, M.; Skorupa, W.; Helm, M.

2015-01-01

Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by femtosecond or nanosecond laser annealing of implanted silicon or bare silicon in certain background gases. The high energy density deposited on the silicon surface leads to a liquid phase and the fast recrystallization velocity allows trapping of chalcogen into the silicon matrix. However, this method encounters the problem of surface segregation. In this paper, we propose a solid phase processing by flash-lamp annealing in the millisecond range, which is in between the conventional rapid thermal annealing and pulsed laser annealing. Flash lamp annealed selenium-implanted silicon shows a substitutional fraction of ~ 70% with an implanted concentration up to 2.3%. The resistivity is lower and the carrier mobility is higher than those of nanosecond pulsed laser annealed samples. Our results show that flash-lamp annealing is superior to laser annealing in preventing surface segregation and in allowing scalability. PMID:25660096

Electronic and Optical Properties of Novel Phases of Silicon and Silicon-Based Derivatives

NASA Astrophysics Data System (ADS)

Ong, Chin Shen; Choi, Sangkook; Louie, Steven

2014-03-01

The vast majority of solar cells in the market today are made from crystalline silicon in the diamond-cubic phase. Nonetheless, diamond-cubic Si has an intrinsic disadvantage: it has an indirect band gap with a large energy difference between the direct gap and the indirect gap. In this work, we perform a careful study of the electronic and optical properties of a newly discovered cubic-Si20 phase of Si that is found to sport a direct band gap. In addition, other silicon-based derivatives have also been discovered and found to be thermodynamically metastable. We carry out ab initio GW and GW-BSE calculations for the quasiparticle excitations and optical spectra, respectively, of these new phases of silicon and silicon-based derivatives. This work was supported by NSF grant No. DMR10-1006184 and U.S. DOE under Contract No. DE-AC02-05CH11231. Computational resources have been provided by DOE at Lawrence Berkeley National Laboratory's NERSC facility and the NSF through XSEDE resources at NICS.

Fabrication and demonstration of 1 × 8 silicon-silica multi-chip switch based on optical phased array

NASA Astrophysics Data System (ADS)

Katayose, Satomi; Hashizume, Yasuaki; Itoh, Mikitaka

2016-08-01

We experimentally demonstrated a 1 × 8 silicon-silica hybrid thermo-optic switch based on an optical phased array using a multi-chip integration technique. The switch consists of a silicon chip with optical phase shifters and two silica-based planar lightwave circuit (PLC) chips composed of optical couplers and fiber connections. We adopted a rib waveguide as the silicon waveguide to reduce the coupling loss and increase the alignment tolerance for coupling between silicon and silica waveguides. As a result, we achieved a fast switching response of 81 µs, a high extinction ratio of over 18 dB and a low insertion loss of 4.9-8.1 dB including a silicon-silica coupling loss of 0.5 ± 0.3 dB at a wavelength of 1.55 µm.

An optical biosensor using MEMS-based V-grooves

NASA Astrophysics Data System (ADS)

Tian, Ye; Ma, Xiaodong; Zou, Xiaotian; Wu, Nan; Wang, Xingwei

2011-05-01

An optical fiber biosensor featuring miniaturization, electromagnetic interference (EMI)-immunity, and flexibility is presented. The sensor was fabricated by aligning two gold-deposited optical single-mode fiber facets inside V-grooves on a silicon chip to form a Fabry-Perot (FP) cavity. The mirrors on the fiber facets were made of deposited gold (Au) films, which provided a high finesse to produce a highly sensitivity. Microelectromechanical systems (MEMS) fabrication techniques were used to precisely control the profile and angle of the V-grooves on the silicon. The biotin-terminated thiol molecule was firstly immobilized on the gold surface. Subsequently, the molecules of Neutravidin were specifically bound to the biotin-terminated self-assembled monolayers (SAMs). The induced changes of cavity length and refractive index (RI) upon the gold surface lead to an optical path difference (OPD) of the FP cavity, which was detected by demodulating the transmission spectrum phase shift. By taking advantage of MEMS techniques, multiple biosensors can be integrated into one small silicon chip for detecting various biomolecule targets simultaneously.

Analyzing optical properties of thin vanadium oxide films through semiconductor-to-metal phase transition using spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Sun, Jianing; Pribil, Greg K.

2017-11-01

We investigated the optical behaviors of vanadium dioxide (VO2) films through the semiconductor-to-metal (STM) phase transition using spectroscopic ellipsometry. Correlations between film thickness and refractive index were observed resulting from the absorbing nature of these films. Simultaneously analyzing data at multiple temperatures using Kramers-Kronig consistent oscillator models help identify film thickness. Nontrivial variations in resulting optical constants were observed through STM transition. As temperature increases, a clear increase is observed in near infrared absorption due to Drude losses that accompany the transition from semiconducting to metallic phases. Thin films grown on silicon and sapphire substrate present different optical properties and thermal hysteresis due to lattice stress and compositional differences.

Results from the PHOBOS experiment at RHIC

NASA Astrophysics Data System (ADS)

Tonjes, Marguerite Belt; Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Decowski, M. P.; G´A, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Heintzelman, G. A.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; H´Ski, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; McLeod, D.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sagerer, J.; Sarin, P.; Sawicki, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S. F.; Sarin, P.; Sawicki, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tang, J.-L.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L. H.; Wosiek, B.; W´Niak, K.; Wuosmaa, A. H.; Wysłouch, B.; Zhang, J.; Phobos Collaboration

2004-04-01

PHOBOS is one of the four experiments at the Relativistic Heavy Ion Collider measuring p + p, d + Au, and Au + Au collisions over a broad range of energies. PHOBOS is a silicon-pad based detector with a 4π multiplicity detector and a high resolution mid-rapidity spectrometer, along with other detectors (time-of-flight walls, proton and zero degree calorimeters). PHOBOS is able to measure particles at low transverse momentum, spectra, flow, particle ratios, and multiplicity over a large region of phase space. A comparison of results for Au + Au and d + Au collisions at √S NN = 220GeV will be discussed.

Development of processes for the production of solar grade silicon from halides and alkali metals, phase 1 and phase 2

NASA Technical Reports Server (NTRS)

Dickson, C. R.; Gould, R. K.; Felder, W.

1981-01-01

High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon are described. Product separation and collection processes were evaluated, measure heat release parameters for scaling purposes and effects of reactants and/or products on materials of reactor construction were determined, and preliminary engineering and economic analysis of a scaled up process were made. The feasibility of the basic process to make and collect silicon was demonstrated. The jet impaction/separation process was demonstrated to be a purification process. The rate at which gas phase species from silicon particle precursors, the time required for silane decomposition to produce particles, and the competing rate of growth of silicon seed particles injected into a decomposing silane environment were determined. The extent of silane decomposition as a function of residence time, temperature, and pressure was measured by infrared absorption spectroscopy. A simplistic model is presented to explain the growth of silicon in a decomposing silane enviroment.

Joined ceramic product

DOEpatents

Henager, Jr., Charles W [Kennewick, WA; Brimhall, John L [West Richland, WA

2001-08-21

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

In situ REM and ex situ SPM studies of silicon (111) surface

NASA Astrophysics Data System (ADS)

Aseev, A. L.; Kosolobov, S. S.; Latyshev, A. V.; Song, Se Ahn; Saranin, A. A.; Zotov, A. V.; Lifshits, V. G.

2005-09-01

Combination of experimental methods, including ultrahigh vacuum in situ reflection electron microscopy, scanning tunnelling microscopy and atomic force microscopy, has been applied for analysis of surface structure and dynamic processes on silicon (111) surfaces during sublimation, rapid temperature cooling, oxygen reactions and metal-silicon surface phase formation. From analysis of triangular negative islands, 0.08 nm in depth, which were forming during quenching, it was deduced the effective activation energy of the island generation is equalled to 0.35 eV and made conclusion that the (1 × 1) (7 × 7) phase transition on Si(111) assumes to be responsible for the negative island nucleation. On the base of the in situ REM study, the dependence of step motion, initiated by surface vacancies generation during oxygen-silicon interaction, on the terrace width was measured. Peculiarities of the initial stages of silicon surface oxidation at low pressures were considered. From precision measurements, the top silicon atom density was determined for the metal-silicon surface phase formed during Na, Ca, Mg and Ag deposition on clean silicon (111) surface.

Magneto-optical non-reciprocal devices in silicon photonics

PubMed Central

Shoji, Yuya; Mizumoto, Tetsuya

2014-01-01

Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm. PMID:27877640

Electron irradiation induced phase separation in a sodium borosilicate glass

NASA Astrophysics Data System (ADS)

Sun, K.; Wang, L. M.; Ewing, R. C.; Weber, W. J.

2004-06-01

Electron irradiation induced phase separation in a sodium borosilicate glass was studied in situ by analytical electron microscopy. Distinctly separate phases that are rich in boron and silicon formed at electron doses higher than 4.0 × 10 11 Gy during irradiation. The separated phases are still in amorphous states even at a much high dose (2.1 × 10 12 Gy). It indicates that most silicon atoms remain tetrahedrally coordinated in the glass during the entire irradiation period, except some possible reduction to amorphous silicon. The particulate B-rich phase that formed at high dose was identified as amorphous boron that may contain some oxygen. Both ballistic and ionization processes may contribute to the phase separation.

Dispersion toughened ceramic composites and method for making same

DOEpatents

Stinton, David P.; Lackey, Walter J.; Lauf, Robert J.

1986-01-01

Ceramic composites exhibiting increased fracture toughness are produced by the simultaneous codeposition of silicon carbide and titanium disilicide by chemical vapor deposition. A mixture of hydrogen, methyltrichlorosilane and titanium tetrachloride is introduced into a furnace containing a substrate such as graphite or silicon carbide. The thermal decomposition of the methyltrichlorosilane provides a silicon carbide matrix phase and the decomposition of the titanium tetrachloride provides a uniformly dispersed second phase of the intermetallic titanium disilicide within the matrix phase. The fracture toughness of the ceramic composite is in the range of about 6.5 to 7.0 MPa.sqroot.m which represents a significant increase over that of silicon carbide.

Dispersion toughened ceramic composites and method for making same

DOEpatents

Stinton, D.P.; Lackey, W.J.; Lauf, R.J.

1984-09-28

Ceramic composites exhibiting increased fracture toughness are produced by the simultaneous codeposition of silicon carbide and titanium disilicide by chemical vapor deposition. A mixture of hydrogen, methyltrichlorosilane and titanium tetrachloride is introduced into a furnace containing a substrate such as graphite or silicon carbide. The thermal decomposition of the methyltrichlorosilane provides a silicon carbide matrix phase and the decomposition of the titanium tetrachloride provides a uniformly dispersed second phase of the intermetallic titanium disilicide within the matrix phase. The fracture toughness of the ceramic composite is in the range of about 6.5 to 7.0 MPa..sqrt..m which represents a significant increase over that of silicon carbide.

Liquid phase sintering of silicon carbide

DOEpatents

Cutler, R.A.; Virkar, A.V.; Hurford, A.C.

1989-05-09

Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1,600 C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase. 4 figs.

Liquid phase sintering of silicon carbide

DOEpatents

Cutler, Raymond A.; Virkar, Anil V.; Hurford, Andrew C.

1989-01-01

Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1600.degree. C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase.

Young Investigator Program: Tribology of Nanostructured Silicon Carbide for MEMS and NEMS Applications in Extreme Environments

DTIC Science & Technology

2011-02-01

was calculated as the difference between the lowest point of the rigid indenter and the initial position of the sample’s free surface. The total...SiC A high pressure structural phase transformation (HPPT) was previously reported for silicon, gallium arsenide, and silicon nitride and indirect...molecular dynamics (MD) simulations with thermodynamic analysis to settle this debate whether silicon carbide (SiC) can undergo a high pressure phase

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

PubMed

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-12-03

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

Suppression of nanoindentation-induced phase transformation in crystalline silicon implanted with hydrogen

NASA Astrophysics Data System (ADS)

Jelenković, Emil V.; To, Suet

2017-09-01

In this paper the effect of hydrogen implantation in silicon on nanoindentation-induced phase transformation is investigated. Hydrogen ions were implanted in silicon through 300 nm thick oxide with double energy implantation (75 and 40 keV). For both energies implantation dose was 4 × 1016 cm-2. Some samples were thermally annealed at 400 °C. The micro-Raman spectroscopy was applied on nanoindentation imprints and the obtained results were related to the pop out/elbow appearances in nanoindentatioin unloading-displacement curves. The Raman spectroscopy revealed a suppression of Si-XII and Si-III phases and formation of a-Si in the indents of hydrogen implanted Si. The high-resolution x-ray diffraction measurements were taken to support the analysis of silicon phase formation during nanoindentation. Implantation induced strain, high hydrogen concentration, and platelets generation were found to be the factors that control suppression of c-Si phases Si-XII and Si-III, as well as a-Si phase enhancement during nanoindentation. [Figure not available: see fulltext.

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

PubMed Central

Mostafa, Ahmad; Medraj, Mamoun

2017-01-01

Fabrication of solar and electronic silicon wafers involves direct contact between solid, liquid and gas phases at near equilibrium conditions. Understanding of the phase diagrams and thermochemical properties of the Si-dopant binary systems is essential for providing processing conditions and for understanding the phase formation and transformation. In this work, ten Si-based binary phase diagrams, including Si with group IIIA elements (Al, B, Ga, In and Tl) and with group VA elements (As, Bi, N, P and Sb), have been reviewed. Each of these systems has been critically discussed on both aspects of phase diagram and thermodynamic properties. The available experimental data and thermodynamic parameters in the literature have been summarized and assessed thoroughly to provide consistent understanding of each system. Some systems were re-calculated to obtain a combination of the best evaluated phase diagram and a set of optimized thermodynamic parameters. As doping levels of solar and electronic silicon are of high technological importance, diffusion data has been presented to serve as a useful reference on the properties, behavior and quantities of metal impurities in silicon. This paper is meant to bridge the theoretical understanding of phase diagrams with the research and development of solar-grade silicon production, relying on the available information in the literature and our own analysis. PMID:28773034

I. Excitonic Phase Diagram in Silicon: Evidence for Two Condensed Phases. I. Motion of Photoexcited Carriers in GALLIUM-ARSENIDE/ALUMINUM(X)GALLIUM(1-X)ARSENIDE Multiple Quantum Wells-Anomalous Confinement at High Densities.

NASA Astrophysics Data System (ADS)

Smith, Leigh Morris

This thesis describes work on the thermodynamics and transport properties of photoexcited carriers in bulk and two-dimensional semiconductors. Two major topics are addressed. I. Photoluminescence experiments of excitons in unstressed silicon are presented which indicate the existence of a new non-degenerate condensed phase of plasma. This new liquid has a density one-tenth that of the ground state electron-hole liquid and is observed both above and below the liquid-gas critical point (~24.5K). A new phase diagram of excitons in silicon is presented which includes these two condensed plasmas. Consistent with the Gibbs phase rule, a triple point at 18.5 K is inferred from the luminescence data as the only temperature where the exciton gas, condensed plasma (CP) and electron-hole liquid (EHL) coexist. The low density condensed plasma persists up to a second critical point at 45 +/- 5K, above which the photoexcited carriers are observed to continuously decay into a partially ionized excitonic gas. II. We have measured the in-plane motion of photoexcited carriers in semiconductor quantum wells with 5 μm spatial and 10 ps temporal resolution and have discovered several surprising results. The effective diffusivity of the carriers at densities below n = 2 times 10^{11}cm ^{-2} is found to depend upon excitation level, possibly indicating defect-limited diffusion or phonon-wind effects. Above this density the spatial profiles exhibit two distinct components with widely differing diffusivities. This remarkable behavior may be understood with consideration of the interactions of non-equilibrium phonons with the photoexcited carriers. We postulate that the slowly diffusing component represents carriers which are "thermally confined" to a phonon hot spot, while the rapidly moving component is driven by the flux of non-equilibrium phonons away from the excitation region.

Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications

NASA Astrophysics Data System (ADS)

Lourdudoss, Sebastian; Junesand, Carl; Kataria, Himanshu; Metaferia, Wondwosen; Omanakuttan, Giriprasanth; Sun, Yan-Ting; Wang, Zhechao; Olsson, Fredrik

2017-02-01

We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

PubMed Central

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-01-01

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759

Variation in emulsion stabilization behavior of hybrid silicone polymers with change in molecular structure: Phase diagram study.

PubMed

Mehta, Somil C; Somasundaran, P; Kulkarni, Ravi

2009-05-15

Silicone oils are widely used in cosmetics and personal care applications to improve softness and condition skin and hair. Being insoluble in water and most hydrocarbons, a common mode of delivering them is in the form of emulsions. Currently most applications use polyoxyethylene (non-ionic) modified siloxanes as emulsifiers to stabilize silicone oil emulsions. However, ionically grafted silicone polymers have not received much attention. Ionic silicones have significantly different properties than the non-ionic counterpart. Thus considerable potential exists to formulate emulsions of silicones with different water/silicone oil ratios for novel applications. In order to understand the mechanisms underlying the effects of hydrophilic modifications on the ability of hybrid silicone polymers to stabilize various emulsions, this article focuses on the phase diagram studies for silicone emulsions. The emulsifying ability of functional silicones was seen to depend on a number of factors including hydrophilicity of the polymer, nature of the functional groups, the extent of modification, and the method of emulsification. It was observed that the region of stable emulsion in a phase diagram expanded with increase in shear rate. At a given shear rate, the region of stable emulsion and the nature of emulsion (water-in-oil or oil-in-water) was observed to depend on hydrophilic-hydrophobic balance of the hybrid silicone emulsifier. At a fixed amount of modification, the non-ionically modified silicone stabilized an oil-in-water emulsion, whereas the ionic silicones stabilized inverse water-in-oil emulsions. This was attributed to the greater hydrophilicity of the polyoxyethylene modified silicones than the ionic counterparts. In general, it is postulated that with progressive increase in hydrophilicity of hybrid silicone emulsifiers, their tendency to stabilize water-in-oil emulsion decreases with corresponding increase in oil-in-water emulsion. Further, this behavior is hypothesized to depend on the nature of modifying functional groups. Thus a hybrid silicone polymer can be tailored by selecting the nature and degree of hydrophilicity to obtain a desired silicone emulsion.

Electron beam induced deposition of silicon nanostructures from a liquid phase precursor.

PubMed

Liu, Yin; Chen, Xin; Noh, Kyong Wook; Dillon, Shen J

2012-09-28

This work demonstrates electron beam induced deposition of silicon from a SiCl(4) liquid precursor in a transmission electron microscope and a scanning electron microscope. Silicon nanodots of tunable size are reproducibly grown in controlled geometries. The volume of these features increases linearly with deposition time. The results indicate that secondary electrons generated at the substrate surface serve as the primary source of silicon reduction. However, at high current densities the influence of the primary electrons is observed to retard growth. The results demonstrate a new approach to fabricating silicon nanostructures and provide fundamental insights into the mechanism for liquid phase electron beam induced deposition.

Electron beam induced deposition of silicon nanostructures from a liquid phase precursor

NASA Astrophysics Data System (ADS)

Liu, Yin; Chen, Xin; Noh, Kyong Wook; Dillon, Shen J.

2012-09-01

This work demonstrates electron beam induced deposition of silicon from a SiCl4 liquid precursor in a transmission electron microscope and a scanning electron microscope. Silicon nanodots of tunable size are reproducibly grown in controlled geometries. The volume of these features increases linearly with deposition time. The results indicate that secondary electrons generated at the substrate surface serve as the primary source of silicon reduction. However, at high current densities the influence of the primary electrons is observed to retard growth. The results demonstrate a new approach to fabricating silicon nanostructures and provide fundamental insights into the mechanism for liquid phase electron beam induced deposition.

Synthesis and Microstructure Evolution of Nano-Titania Doped Silicon Coatings

NASA Astrophysics Data System (ADS)

Moroz, N. A.; Umapathy, H.; Mohanty, P.

2010-01-01

The Anatase phase of Titania (TiO2) in nanocrystalline form is a well known photocatalyst. Photocatalysts are commercially used to accelerate photoreactions and increase photovoltaic efficiency such as in solar cells. This study investigates the in-flight synthesis of Titania and its doping into a Silicon matrix resulting in a catalyst-dispersed coating. A liquid precursor of Titanium Isopropoxide and ethanol was coaxially fed into the plasma gun to form Titania nanoparticles, while Silicon powder was externally injected downstream. Coatings of 75-150 μm thick were deposited onto flat coupons. Further, Silicon powder was alloyed with aluminum to promote crystallization and reduce the amorphous phase in the Silicon matrix. Dense coatings containing nano-Titania particles were observed under electron microscope. X-ray diffraction showed that both the Rutile and Anatase phases of the Titania exist. The influence of process parameters and aluminum alloying on the microstructure evolution of the doped coatings is analyzed and presented.

Quantitative-phase microscopy of nanosecond laser-induced micro-modifications inside silicon.

PubMed

Li, Q; Chambonneau, M; Chanal, M; Grojo, D

2016-11-20

Laser-induced permanent modification inside silicon has been recently demonstrated by using tightly focused nanosecond sources at a 1550 nm wavelength. We have developed a quantitative-phase microscope operating in the near-infrared domain to characterize the laser-induced modifications deep into silicon. By varying the number of applied laser pulses and the energy, we observe porous and densified regions in the focal region. The observed changes are associated with refractive index variations |Δn| exceeding 10^-3, enough to envision the laser writing of optical functionalities inside silicon.

Demonstration of free space coherent optical communication using integrated silicon photonic orbital angular momentum devices.

PubMed

Su, Tiehui; Scott, Ryan P; Djordjevic, Stevan S; Fontaine, Nicolas K; Geisler, David J; Cai, Xinran; Yoo, S J B

2012-04-23

We propose and demonstrate silicon photonic integrated circuits (PICs) for free-space spatial-division-multiplexing (SDM) optical transmission with multiplexed orbital angular momentum (OAM) states over a topological charge range of -2 to +2. The silicon PIC fabricated using a CMOS-compatible process exploits tunable-phase arrayed waveguides with vertical grating couplers to achieve space division multiplexing and demultiplexing. The experimental results utilizing two silicon PICs achieve SDM mux/demux bit-error-rate performance for 1‑b/s/Hz, 10-Gb/s binary phase shifted keying (BPSK) data and 2-b/s/Hz, 20-Gb/s quadrature phase shifted keying (QPSK) data for individual and two simultaneous OAM states. © 2012 Optical Society of America

Silicon graphene waveguide tunable broadband microwave photonics phase shifter.

PubMed

Capmany, José; Domenech, David; Muñoz, Pascual

2014-04-07

We propose the use of silicon graphene waveguides to implement a tunable broadband microwave photonics phase shifter based on integrated ring cavities. Numerical computation results show the feasibility for broadband operation over 40 GHz bandwidth and full 360° radiofrequency phase-shift with a modest voltage excursion of 0.12 volt.

Amorphization and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions

NASA Astrophysics Data System (ADS)

Newby, Pascal J.; Canut, Bruno; Bluet, Jean-Marie; Gomès, Séverine; Isaiev, Mykola; Burbelo, Roman; Termentzidis, Konstantinos; Chantrenne, Patrice; Fréchette, Luc G.; Lysenko, Vladimir

2013-07-01

In this article, we demonstrate that the thermal conductivity of nanostructured porous silicon is reduced by amorphization and also that this amorphous phase in porous silicon can be created by swift (high-energy) heavy ion irradiation. Porous silicon samples with 41%-75% porosity are irradiated with 110 MeV uranium ions at six different fluences. Structural characterisation by micro-Raman spectroscopy and SEM imaging show that swift heavy ion irradiation causes the creation of an amorphous phase in porous Si but without suppressing its porous structure. We demonstrate that the amorphization of porous silicon is caused by electronic-regime interactions, which is the first time such an effect is obtained in crystalline silicon with single-ion species. Furthermore, the impact on the thermal conductivity of porous silicon is studied by micro-Raman spectroscopy and scanning thermal microscopy. The creation of an amorphous phase in porous silicon leads to a reduction of its thermal conductivity, up to a factor of 3 compared to the non-irradiated sample. Therefore, this technique could be used to enhance the thermal insulation properties of porous Si. Finally, we show that this treatment can be combined with pre-oxidation at 300 °C, which is known to lower the thermal conductivity of porous Si, in order to obtain an even greater reduction.

Wetting of silicone oil onto a cell-seeded substrate

NASA Astrophysics Data System (ADS)

Lu, Yongjie; Chan, Yau Kei; Chao, Youchuang; Shum, Ho Cheung

2017-11-01

Wetting behavior of solid substrates in three-phase systems containing two immiscible liquids are widely studied. There exist many three-phase systems in biological environments, such as droplet-based microfluidics or tamponade of silicone oil for eye surgery. However, few studies focus on wetting behavior of biological surfaces with cells. Here we investigate wetting of silicone oil onto cell-seeded PMMA sheet immersed in water. Using a simple parallel-plate cell, we show the effect of cell density, viscosity of silicone oil, morphology of silicone oil drops and interfacial tension on the wetting phenomenon. The dynamics of wetting is also observed by squeezing silicone oil drop using two parallel plates. Experimental results are explained based on disjoining pressure which is dependent on the interaction of biological surfaces and liquid used. These findings are useful for explaining emulsification of silicone oil in ophthalmological applications.

Method for Forming Fiber Reinforced Composite Bodies with Graded Composition and Stress Zones

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay (Inventor); Levine, Stanley R. (Inventor); Smialek, James A. (Inventor)

1999-01-01

A near-net, complex shaped ceramic fiber reinforced silicon carbide based composite bodies with graded compositions and stress zones is disclosed. To provide the composite a fiber preform is first fabricated and an interphase is applied by chemical vapor infiltration, sol-gel or polymer processes. This first body is further infiltrated with a polymer mixture containing carbon, and/or silicon carbide, and additional oxide, carbide, or nitride phases forming a second body. One side of the second body is spray coated or infiltrated with slurries containing high thermal expansion and oxidation resistant. crack sealant phases and the other side of this second body is coated with low expansion phase materials to form a third body. This third body consisting of porous carbonaceous matrix surrounding the previously applied interphase materials, is then infiltrated with molten silicon or molten silicon-refractory metal alloys to form a fourth body. The resulting fourth body comprises dense composites consisting of fibers with the desired interphase which are surrounded by silicon carbide and other second phases materials at the outer and inner surfaces comprising material of silicon, germanium, refractory metal suicides, borides, carbides, oxides, and combinations thereof The resulting composite fourth body has different compositional patterns from one side to the other.

Micromachined cutting blade formed from {211}-oriented silicon

DOEpatents

Fleming, James G.; Sniegowski, Jeffry J.; Montague, Stephen

2003-09-09

A cutting blade is disclosed fabricated of micromachined silicon. The cutting blade utilizes a monocrystalline silicon substrate having a {211} crystalline orientation to form one or more cutting edges that are defined by the intersection of {211} crystalline planes of silicon with {111} crystalline planes of silicon. This results in a cutting blade which has a shallow cutting-edge angle .theta. of 19.5.degree.. The micromachined cutting blade can be formed using an anisotropic wet etching process which substantially terminates etching upon reaching the {111} crystalline planes of silicon. This allows multiple blades to be batch fabricated on a common substrate and separated for packaging and use. The micromachined cutting blade, which can be mounted to a handle in tension and optionally coated for increased wear resistance and biocompatibility, has multiple applications including eye surgery (LASIK procedure).

Micromachined cutting blade formed from {211}-oriented silicon

DOEpatents

Fleming, James G [Albuquerque, NM; Fleming, legal representative, Carol; Sniegowski, Jeffry J [Tijeras, NM; Montague, Stephen [Albuquerque, NM

2011-08-09

A cutting blade is disclosed fabricated of micromachined silicon. The cutting blade utilizes a monocrystalline silicon substrate having a {211} crystalline orientation to form one or more cutting edges that are defined by the intersection of {211} crystalline planes of silicon with {111} crystalline planes of silicon. This results in a cutting blade which has a shallow cutting-edge angle .theta. of 19.5.degree.. The micromachined cutting blade can be formed using an anisotropic wet etching process which substantially terminates etching upon reaching the {111} crystalline planes of silicon. This allows multiple blades to be batch fabricated on a common substrate and separated for packaging and use. The micromachined cutting blade, which can be mounted to a handle in tension and optionally coated for increased wear resistance and biocompatibility, has multiple applications including eye surgery (LASIK procedure).

Mechanistic Analysis of Mechano-Electrochemical Interaction in Silicon Electrodes with Surface Film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verma, Ankit; Mukherjee, Partha P.

2017-11-17

High-capacity anode materials for lithium-ion batteries, such as silicon, are prone to large volume change during lithiation/delithiation which may cause particle cracking and disintegration, thereby resulting in severe capacity fade and reduction in cycle life. In this work, a stochastic analysis is presented in order to understand the mechano-electrochemical interaction in silicon active particles along with a surface film during cycling. Amorphous silicon particles exhibiting single-phase lithiation incur lower amount of cracking as compared to crystalline silicon particles exhibiting two-phase lithiation for the same degree of volumetric expansion. Rupture of the brittle surface film is observed for both amorphous andmore » crystalline silicon particles and is attributed to the large volumetric expansion of the silicon active particle with lithiation. The mechanical property of the surface film plays an important role in determining the amount of degradation in the particle/film assembly. A strategy to ameliorate particle cracking in silicon active particles is proposed.« less

Quantitative prediction of phase transformations in silicon during nanoindentation

NASA Astrophysics Data System (ADS)

Zhang, Liangchi; Basak, Animesh

2013-08-01

This paper establishes the first quantitative relationship between the phases transformed in silicon and the shape characteristics of nanoindentation curves. Based on an integrated analysis using TEM and unit cell properties of phases, the volumes of the phases emerged in a nanoindentation are formulated as a function of pop-out size and depth of nanoindentation impression. This simple formula enables a fast, accurate and quantitative prediction of the phases in a nanoindentation cycle, which has been impossible before.

Frequency non-degenerate phase-sensitive optical parametric amplification based on four-wave-mixing in width-modulated silicon waveguides.

PubMed

Wang, Zhaolu; Liu, Hongjun; Sun, Qibing; Huang, Nan; Li, Xuefeng

2014-12-15

A width-modulated silicon waveguide is proposed to realize non-degenerate phase sensitive optical parametric amplification. It is found that the relative phase at the input of the phase sensitive amplifier (PSA) θIn-PSA can be tuned by tailoring the width and length of the second segment of the width-modulated silicon waveguide, which will influence the gain in the parametric amplification process. The maximum gain of PSA is larger by 9 dB compared with the phase insensitive amplifier (PIA) gain, and the gain bandwidth of PSA is larger by 35 nm compared with the gain bandwidth of PIA. Our on-chip PSA can find important potential applications in highly integrated optical circuits for optical chip-to-chip communication and computers.

Process of preparing tritiated porous silicon

DOEpatents

Tam, Shiu-Wing

1997-01-01

A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

Silicon materials task of the low cost solar array project. Phase 3: Effect of impurities and processing on silicon solar cells

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R.; Blais, P. D.; Rohatgi, A.; Campbell, R. B.; Rai-Choudhury, P.; Mollenkopf, H. C.; Mccormick, J. R.

1979-01-01

The 13th quarterly report of a study entitled an Investigation of the Effects of Impurities and Processing on Silicon Solar Cells is given. The objective of the program is to define the effects of impurities, various thermochemical processes and any impurity-process interactions on the performance of terrestrial silicon solar cells. The Phase 3 program effort falls in five areas: (1) cell processing studies; (2) completion of the data base and impurity-performance modeling for n-base cells; (3) extension of p-base studies to include contaminants likely to be introduced during silicon production, refining or crystal growth; (4) anisotropy effects; and (5) a preliminary study of the permanence of impurity effects in silicon solar cells. The quarterly activities for this report focus on tasks (1), (3) and (4).

Amorphization and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Newby, Pascal J.; Institut Interdisciplinaire d'Innovation Technologique; Canut, Bruno

2013-07-07

In this article, we demonstrate that the thermal conductivity of nanostructured porous silicon is reduced by amorphization and also that this amorphous phase in porous silicon can be created by swift (high-energy) heavy ion irradiation. Porous silicon samples with 41%-75% porosity are irradiated with 110 MeV uranium ions at six different fluences. Structural characterisation by micro-Raman spectroscopy and SEM imaging show that swift heavy ion irradiation causes the creation of an amorphous phase in porous Si but without suppressing its porous structure. We demonstrate that the amorphization of porous silicon is caused by electronic-regime interactions, which is the first timemore » such an effect is obtained in crystalline silicon with single-ion species. Furthermore, the impact on the thermal conductivity of porous silicon is studied by micro-Raman spectroscopy and scanning thermal microscopy. The creation of an amorphous phase in porous silicon leads to a reduction of its thermal conductivity, up to a factor of 3 compared to the non-irradiated sample. Therefore, this technique could be used to enhance the thermal insulation properties of porous Si. Finally, we show that this treatment can be combined with pre-oxidation at 300 Degree-Sign C, which is known to lower the thermal conductivity of porous Si, in order to obtain an even greater reduction.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

PubMed

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

Process of preparing tritiated porous silicon

DOEpatents

Tam, S.W.

1997-02-18

A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

A photonic circuit for complementary frequency shifting, in-phase quadrature/single sideband modulation and frequency multiplication: analysis and integration feasibility

NASA Astrophysics Data System (ADS)

Hasan, Mehedi; Hu, Jianqi; Nikkhah, Hamdam; Hall, Trevor

2017-08-01

A novel photonic integrated circuit architecture for implementing orthogonal frequency division multiplexing by means of photonic generation of phase-correlated sub-carriers is proposed. The circuit can also be used for implementing complex modulation, frequency up-conversion of the electrical signal to the optical domain and frequency multiplication. The principles of operation of the circuit are expounded using transmission matrices and the predictions of the analysis are verified by computer simulation using an industry-standard software tool. Non-ideal scenarios that may affect the correct function of the circuit are taken into consideration and quantified. The discussion of integration feasibility is illustrated by a photonic integrated circuit that has been fabricated using 'library' components and which features most of the elements of the proposed circuit architecture. The circuit is found to be practical and may be fabricated in any material platform that offers a linear electro-optic modulator such as organic or ferroelectric thin films hybridized with silicon photonics.

Studies of the Crystallization Process of Aluminum-Silicon Alloys Using a High Temperature Microscope. Thesis

NASA Technical Reports Server (NTRS)

Justi, S.

1985-01-01

It is shown that primary silicon crystals grow polyhedral in super-eutectic AlSi melts and that phosphorus additives to the melt confirm the strong seeding capacity. Primary silicon exhibits strong dendritic seeding effects in eutectic silicon phases of various silicon alloys, whereas primary aluminum does not possess this capacity. Sodium addition also produces a dendritic silicon network growth in the interior of the sample that is attributed to the slower silicon diffusion velocity during cooling.

Multispectral imaging with vertical silicon nanowires

PubMed Central

Park, Hyunsung; Crozier, Kenneth B.

2013-01-01

Multispectral imaging is a powerful tool that extends the capabilities of the human eye. However, multispectral imaging systems generally are expensive and bulky, and multiple exposures are needed. Here, we report the demonstration of a compact multispectral imaging system that uses vertical silicon nanowires to realize a filter array. Multiple filter functions covering visible to near-infrared (NIR) wavelengths are simultaneously defined in a single lithography step using a single material (silicon). Nanowires are then etched and embedded into polydimethylsiloxane (PDMS), thereby realizing a device with eight filter functions. By attaching it to a monochrome silicon image sensor, we successfully realize an all-silicon multispectral imaging system. We demonstrate visible and NIR imaging. We show that the latter is highly sensitive to vegetation and furthermore enables imaging through objects opaque to the eye. PMID:23955156

Squeezing of Light via Reflection from a Silicon Micromechanical Resonator

DTIC Science & Technology

2013-03-14

Hz. Laser phase noise on the signal beam can be converted to intensity noise by reflection from the dispersive cavity or due to frequency dependent...Figure A6: Experimental setup for characterization of intensity and phase noise. The laser is amplitude stabilized and an attenuator is used to select...nm thick silicon de- vice layer of a silicon-on-insulator microchip (see Fig. 1a). The in-plane differential motion of the two beams at a fundamental

Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

PubMed

Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

2017-03-20

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm². Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

Dynamics and diffusion mechanism of low-density liquid silicon

DOE PAGES

Shen, B.; Wang, Z. Y.; Dong, F.; ...

2015-11-05

A first-order phase transition from a high-density liquid to a low-density liquid has been proposed to explain the various thermodynamic anomies of water. It also has been proposed that such liquid–liquid phase transition would exist in supercooled silicon. Computer simulation studies show that, across the transition, the diffusivity drops roughly 2 orders of magnitude, and the structures exhibit considerable tetrahedral ordering. The resulting phase is a highly viscous, low-density liquid silicon. Investigations on the atomic diffusion of such a novel form of liquid silicon are of high interest. Here we report such diffusion results from molecular dynamics simulations using themore » classical Stillinger–Weber (SW) potential of silicon. We show that the atomic diffusion of the low-density liquid is highly correlated with local tetrahedral geometries. We also show that atoms diffuse through hopping processes within short ranges, which gradually accumulate to an overall random motion for long ranges as in normal liquids. There is a close relationship between dynamical heterogeneity and hopping process. We point out that the above diffusion mechanism is closely related to the strong directional bonding nature of the distorted tetrahedral network. Here, our work offers new insights into the complex behavior of the highly viscous low density liquid silicon, suggesting similar diffusion behaviors in other tetrahedral coordinated liquids that exhibit liquid–liquid phase transition such as carbon and germanium.« less

High Density Polymer-Based Integrated Electgrode Array

DOEpatents

Maghribi, Mariam N.; Krulevitch, Peter A.; Davidson, James Courtney; Hamilton, Julie K.

2006-04-25

A high density polymer-based integrated electrode apparatus that comprises a central electrode body and a multiplicity of arms extending from the electrode body. The central electrode body and the multiplicity of arms are comprised of a silicone material with metal features in said silicone material that comprise electronic circuits.

An experimental study on flow friction and heat transfer of water in sinusoidal wavy silicon microchannels

NASA Astrophysics Data System (ADS)

Huang, Houxue; Wu, Huiying; Zhang, Chi

2018-05-01

Sinusoidal wavy microchannels have been known as a more heat transfer efficient heat sink for the cooling of electronics than normal straight microchannels. However, the existing experimental study on wavy silicon microchannels with different phase differences are few. As a result of this, in this paper an experimental study has been conducted to investigate the single phase flow friction and heat transfer of de-ionized water in eight different sinusoidal wavy silicon microchannels (SWSMCs) and one straight silicon microchannel (SMC). The SWSMCs feature different phase differences (α  =  0 to π) and different relative wavy amplitudes (β  =  A/l  =  0.05 to 0.4), but the same average hydraulic diameters (D h  =  160 µm). It is found that both flow friction constant fRe and the Nusselt number depend on the phase difference and relative wavy amplitude. For sinusoidal wavy microchannels with a relative wavy amplitude (β  =  0.05), the Nusselt number increased noticeably with the phase difference for Re  >  250, but the effect was insignificant for Re  <  250 however, both pressure drop and apparent flow friction constant fRe increased with the increase in phase difference. For sinusoidal wavy microchannels with 0 phase difference, the increase in relative wavy amplitude obtained by reducing the wavy wave length induced higher pressure drop and apparent friction constant fRe, while the Nusselt number increased with relative wavy amplitude for Re  >  300. The results indicate that the thermal resistances of sinusoidal wavy silicon microchannels were generally lower than that of straight silicon microchannels, and the thermal resistance decreased with the increase in relative wavy amplitude. The enhancement of thermal performance is attributed to the flow re-circulation occurring in the corrugation troughs and the secondary flows or Dean vortices introduced by curved channels. It is concluded that silicon sinusoidal wavy microchannels provide higher heat transfer rate albeit with a higher flow friction, making it a better choice for the cooling of high heat flux electronics.

Phase sensitive amplification in integrated waveguides (Conference Presentation)

NASA Astrophysics Data System (ADS)

Schroeder, Jochen B.; Zhang, Youngbin; Husko, Chad A.; LeFrancois, Simon; Eggleton, Benjamin J.

2017-02-01

Phase sensitive amplification (PSA) is an attractive technology for integrated all-optical signal processing, due to it's potential for noiseless amplification, phase regeneration and generation of squeezed light. In this talk I will review our results on implementing four-wave-mixing based PSA inside integrated photonic devices. In particular I will discuss PSA in chalcogenide ridge waveguides and silicon slow-light photonic crystals. We achieve PSA in both pump- and signal-degenerate schemes with maximum extinction ratios of 11 (silicon) and 18 (chalcogenide) dB. I will further discuss the influence of two-photon absorption and free carrier effects on the performance of silicon-based PSAs.

Polarization-Independent Silicon Metadevices for Efficient Optical Wavefront Control.

PubMed

Chong, Katie E; Staude, Isabelle; James, Anthony; Dominguez, Jason; Liu, Sheng; Campione, Salvatore; Subramania, Ganapathi S; Luk, Ting S; Decker, Manuel; Neshev, Dragomir N; Brener, Igal; Kivshar, Yuri S

2015-08-12

We experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0-2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the lattice spacing as a single geometric control parameter.

Microminiature gas chromatograph

DOEpatents

Yu, Conrad M.

1996-01-01

A microminiature gas chromatograph (.mu.GC) comprising a least one silicon wafer, a gas injector, a column, and a detector. The gas injector has a normally closed valve for introducing a mobile phase including a sample gas in a carrier gas. The valve is fully disposed in the silicon wafer(s). The column is a microcapillary in silicon crystal with a stationary phase and is mechanically connected to receive the mobile phase from the gas injector for the molecular separation of compounds in the sample gas. The detector is mechanically connected to the column for the analysis of the separated compounds of sample gas with electronic means, e.g., ion cell, field emitter and PIN diode.

Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

1978-01-01

Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

Development of a model and computer code to describe solar grade silicon production processes

NASA Technical Reports Server (NTRS)

Srivastava, R.; Gould, R. K.

1979-01-01

Mathematical models, and computer codes based on these models were developed which allow prediction of the product distribution in chemical reactors in which gaseous silicon compounds are converted to condensed phase silicon. The reactors to be modeled are flow reactors in which silane or one of the halogenated silanes is thermally decomposed or reacted with an alkali metal, H2 or H atoms. Because the product of interest is particulate silicon, processes which must be modeled, in addition to mixing and reaction of gas-phase reactants, include the nucleation and growth of condensed Si via coagulation, condensation, and heterogeneous reaction.

Process for forming retrograde profiles in silicon

DOEpatents

Weiner, K.H.; Sigmon, T.W.

1996-10-15

A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Effect of Silicon in U-10Mo Alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kautz, Elizabeth J.; Devaraj, Arun; Kovarik, Libor

2017-08-31

This document details a method for evaluating the effect of silicon impurity content on U-10Mo alloys. Silicon concentration in U-10Mo alloys has been shown to impact the following: volume fraction of precipitate phases, effective density of the final alloy, and 235-U enrichment in the gamma-UMo matrix. This report presents a model for calculating these quantities as a function of Silicon concentration, which along with fuel foil characterization data, will serve as a reference for quality control of the U-10Mo final alloy Si content. Additionally, detailed characterization using scanning electron microscope imaging, transmission electron microscope diffraction, and atom probe tomography showedmore » that Silicon impurities present in U-10Mo alloys form a Si-rich precipitate phase.« less

Zeroth order Fabry-Perot resonance enabled ultra-thin perfect light absorber using percolation aluminum and silicon nanofilms

DOE PAGES

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

2016-03-04

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Morphologies of Primary Silicon in Hypereutectic Al-Si Alloys: Phase-Field Simulation Supported by Key Experiments

NASA Astrophysics Data System (ADS)

Wang, Kai; Wei, Ming; Zhang, Lijun; Du, Yong

2016-04-01

We realized a three-dimensional visualization of the morphology evolution and the growth behavior of the octahedral primary silicon in hypereutectic Al-20wtpctSi alloy during solidification in a real length scale by utilizing the phase-field simulation coupled with CALPHAD databases, and supported by key experiments. Moreover, through two-dimensional cut of the octahedral primary silicon at random angles, different morphologies observed in experiments, including triangle, square, trapezoid, rhombic, pentagon, and hexagon, were well reproduced.

Phase-field model for the two-phase lithiation of silicon

NASA Astrophysics Data System (ADS)

Gao, Fangliang; Hong, Wei

2016-09-01

As an ideal anode material, silicon has the highest lithium-ion capacity in theory, but the broader application is limited by the huge volumetric strain caused by lithium insertion and extraction. To better understand the physical process and to resolve the related reliability issue, enormous efforts have been made. Recent experiments observed sharp reaction fronts in both crystalline and amorphous silicon during the first lithiation half-cycle. Such a concentration profile indicates that the process is likely to be reaction limited. Based on this postulation, a phase-field model is developed and implemented into a finite-element code to simulate the coupled large inelastic deformation and motion of the reaction front in a silicon electrode. In contrast to most existing models, the model treats both volumetric and deviatoric inelastic deformation in silicon as a direct consequence of the lithiation at the reaction front. The amount of deviatoric deformation is determined by using the recently developed kinetic model of stress-induced anisotropic reaction. By considering the role of stress in the lithiation process, this model successfully recovers the self-limiting phenomenon of silicon electrodes, and relates it to the local geometry of electrodes. The model is also used to evaluate the energy-release rate of the surface crack on a spherical electrode, and the result suggests a critical size of silicon nanoparticles to avert fracture. As examples, the morphology evolution of a silicon disk and a Si nanowire during lithiation are also investigated.

Cellular metabolic responses of the marine diatom Pseudo-nitzschia multiseries associated with cell wall formation.

PubMed

Xu, Bin; Luo, Chun-Shan; Liang, Jun-Rong; Chen, Dan-Dan; Zhuo, Wen-Hao; Gao, Ya-Hui; Chen, Chang-Ping; Song, Si-Si

2014-08-01

In this study a comparative proteomics approach involving a mass spectrometric analysis of synchronized cells was employed to investigate the cellular-level metabolic mechanisms associated with siliceous cell wall formation in the pennate diatom Pseudo-nitzschia multiseries. Cultures of P. multiseries were synchronized using the silicate limitation method. Approximately 75% of cells were arrested at the G2+M phase of the cell cycle after 48 h of silicate starvation. The majority of cells progressed to new valve synthesis within 5h of silicon replenishment. We compared the proteome of P. multiseries at 0, 4, 5, and 6h of synchronization progress upon silicon replenishment using two-dimensional gel electrophoresis. Forty-eight differentially expressed protein spots were identified in abundance (greater than two-fold change; P<0.005), some of which are predicted to be involved in intracellular trafficking, cytoskeleton, photosynthesis, lipid metabolism, and protein biosynthesis. Cytoskeleton proteins and clathrin coat components were also hypothesized to play potential roles in cell wall formation. The proteomic profile analysis suggests that P. multiseries most likely employs multiple synergistic biochemical mechanisms for cell wall formation. These results improve our understanding of the molecular mechanisms underlying silicon cell wall formation and enhance our understanding of the important role played by diatoms in silicon biogeochemical cycling. Copyright © 2013 Elsevier B.V. All rights reserved.

Oxygen partial pressure influenced structural and optical properties of DC magnetron sputtered ZrO{sub 2} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kondaiah, P.; Madhavi, V.; Uthanna, S.

2013-02-05

Thin films of zirconium oxide (ZrO{sub 2}) were deposited on (100) p-silicon and quartz substrates by sputtering of metallic zirconium target under different oxygen partial pressures in the range 8 Multiplication-Sign 10{sup -3}-6 Multiplication-Sign 10{sup -2}Pa. The effect of oxygen partial pressure on the structural and optical properties of the deposited films was systematically investigated. The deposition rate of the films decreased from 3.3 to 1.83 nm/min with the increase of oxygen partial pressure from 8 Multiplication-Sign 10{sup -3}-6 Multiplication-Sign 10{sup -2}Pa respectively. The X-ray diffraction profiles revealed that the films exhibit (111) refection of zirconium oxide in monoclinic phase.more » The optical band gap of the films increased from 5.62 to 5.80 eV and refractive index increased from 2.01 to 2.08 with the increase of oxygen partial pressure from 8 Multiplication-Sign 10{sup -3}-6 Multiplication-Sign 10{sup -2}Pa respectively.« less

Analysis and design of tunable wideband microwave photonics phase shifter based on Fabry-Perot cavity and Bragg mirrors in silicon-on-insulator waveguide.

PubMed

Qu, Pengfei; Zhou, Jingran; Chen, Weiyou; Li, Fumin; Li, Haibin; Liu, Caixia; Ruan, Shengping; Dong, Wei

2010-04-20

We designed a microwave (MW) photonics phase shifter, consisting of a Fabry-Perot filter, a phase modulation region (PMR), and distributed Bragg reflectors, in a silicon-on-insulator rib waveguide. The thermo-optics effect was employed to tune the PMR. It was theoretically demonstrated that the linear MW phase shift of 0-2pi could be achieved by a refractive index variation of 0-9.68x10(-3) in an ultrawideband (about 38?GHz-1.9?THz), and the corresponding tuning resolution was about 6.92 degrees / degrees C. The device had a very compact size. It could be easily integrated in silicon optoelectronic chips and expected to be widely used in the high-frequency MW photonics field.

Numerical simulation and experimental validation of the dynamics of multiple bubble merger during pool boiling under microgravity conditions.

PubMed

Abarajith, H S; Dhir, V K; Warrier, G; Son, G

2004-11-01

Numerical simulation and experimental validation of the growth and departure of multiple merging bubbles and associated heat transfer on a horizontal heated surface during pool boiling under variable gravity conditions have been performed. A finite difference scheme is used to solve the equations governing mass, momentum, and energy in the vapor liquid phases. The vapor-liquid interface is captured by a level set method that is modified to include the influence of phase change at the liquid-vapor interface. Water is used as test liquid. The effects of reduced gravity condition and orientation of the bubbles on the bubble diameter, interfacial structure, bubble merger time, and departure time, as well as local heat fluxes, are studied. In the experiments, multiple vapor bubbles are produced on artificial cavities in the 2-10 micrometer diameter range, microfabricated on the polished silicon wafer with given spacing. The wafer was heated electrically from the back with miniature strain gage type heating elements in order to control the nucleation superheat. The experiments conducted in normal Earth gravity and in the low gravity environment of KC-135 aircraft are used to validate the numerical simulations.

Enhanced densification under shock compression in porous silicon

DOE PAGES

Lane, J. Matthew; Thompson, Aidan Patrick; Vogler, Tracy

2014-10-27

Under shock compression, most porous materials exhibit lower densities for a given pressure than that of a full-dense sample of the same material. However, some porous materials exhibit an anomalous, or enhanced, densification under shock compression. The mechanism driving this behavior was not completely determined. We present evidence from atomistic simulation that pure silicon belongs to this anomalous class of materials and demonstrate the associated mechanisms responsible for the effect in porous silicon. Atomistic response indicates that local shear strain in the neighborhood of collapsing pores catalyzes a local solid-solid phase transformation even when bulk pressures are below the thermodynamicmore » phase transformation pressure. This metastable, local, and partial, solid-solid phase transformation, which accounts for the enhanced densification in silicon, is driven by the local stress state near the void, not equilibrium thermodynamics. This mechanism may also explain the phenomenon in other covalently bonded materials.« less

High-temperature deformation and microstructural analysis for silicon nitride-scandium(III) oxide

NASA Technical Reports Server (NTRS)

Cheong, Deock-Soo; Sanders, William A.

1992-01-01

It was indicated that Si3N4 doped with Sc2O3 may exhibit high temperature mechanical properties superior to Si3N4 systems with various other oxide sintered additives. High temperature deformation of samples was studied by characterizing the microstructures before and after deformation. It was found that elements of the additive, such as Sc and O, exist in small amounts at very thin grain boundary layers and most of them stay in secondary phases at tripple and multiple grain boundary junctions. These secondary phases are devitrified as crystalline Sc2Si2O7. Deformation of the samples was dominated by cavitational processes rather than movements of dislocations. Thus the excellent deformation resistance of the samples at high temperature can be attributed to the very small thickness of the grain boundary layers and the crystalline secondary phase.

Layered nano-gratings by electron beam writing to form 3-level diffractive optical elements for 3D phase-offset holographic lithography.

PubMed

Yuan, Liang Leon; Herman, Peter R

2015-12-21

A multi-level nanophotonic structure is a major goal in providing advanced optical functionalities as found in photonic crystals and metamaterials. A three-level nano-grating phase mask has been fabricated in an electron-beam resist (ma-N) to meet the requirement of holographic generation of a diamond-like 3D nanostructure in photoresist by a single exposure step. A 2D mask with 600 nm periodicity is presented for generating first order diffracted beams with a preferred π/2 phase shift on the X- and Y-axes and with sufficient 1(st) order diffraction efficiency of 3.5% at 800 nm wavelength for creating a 3D periodic nanostructure in SU-8 photoresist. The resulting 3D structure is anticipated to provide an 8% complete photonic band gap (PBG) upon silicon inversion. A thin SiO2 layer was used to isolate the grating layers and multiple spin-coating steps served to planarize the final resist layer. A reversible soft coating (aquaSAVE) was introduced to enable SEM inspection and verification of each insulating grating layer. This e-beam lithographic method is extensible to assembling multiple layers of a nanophotonic structure.

Milestone Report - M3FT-15OR03120215 - Recommend HIP Conditions for AgZ

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bruffey, Stephanie H.; Jubin, Robert Thomas

2015-09-18

The purpose of this study was to continue research to determine if HIPing could directly convert I-Ag 0Z into a suitable waste form. Fiscal year (FY) 2015 work completed studies of Phase IIA, IIB, and IIC samples. Product consistency testing (PCT) of Phase IIA samples resulted in iodine release below detection limit for six of twelve samples. This is promising and indicates that a durable waste form may be produced through HIPing even if transformation of the zeolite to a distinct mineral phase does not occur. From PCT results of Phase IIA samples, it was determined that future pressing shouldmore » be conducted at a temperature of 900°C. Phase IIC testing continued production of samples to examine the effects of multiple source materials, compositional variations, and an expanded temperature range. The density of each sample was determined and x-ray diffraction (XRD) patterns were obtained. In all cases, there was nothing in the XRD analyses to indicate the creation of any AgI-containing silicon phase; the samples were found to be largely amorphous.« less

Estimates of point defect production in α-quartz using molecular dynamics simulations

NASA Astrophysics Data System (ADS)

Cowen, Benjamin J.; El-Genk, Mohamed S.

2017-07-01

Molecular dynamics (MD) simulations are performed to investigate the production of point defects in α-quartz by oxygen and silicon primary knock-on atoms (PKAs) of 0.25-2 keV. The Wigner-Seitz (WS) defect analysis is used to identify the produced vacancies, interstitials, and antisites, and the coordination defect analysis is used to identify the under and over-coordinated oxygen and silicon atoms. The defects at the end of the ballistic phase and the residual defects, after annealing, increase with increased PKA energy, and are statistically the same for the oxygen and silicon PKAs. The WS defect analysis results show that the numbers of the oxygen vacancies and interstitials (VO, Oi) at the end of the ballistic phase is the highest, followed closely by those of the silicon vacancies and interstitials (VSi, Sii). The number of the residual oxygen and silicon vacancies and interstitials are statistically the same. In addition, the under-coordinated OI and SiIII, which are the primary defects during the ballistic phase, have high annealing efficiencies (>89%). The over-coordinated defects of OIII and SiV, which are not nearly as abundant in the ballistic phase, have much lower annealing efficiencies (<63%) that decrease with increased PKA energy.

Microminiature gas chromatograph

DOEpatents

Yu, C.M.

1996-12-10

A microminiature gas chromatograph ({mu}GC) comprising a least one silicon wafer, a gas injector, a column, and a detector. The gas injector has a normally closed valve for introducing a mobile phase including a sample gas in a carrier gas. The valve is fully disposed in the silicon wafer(s). The column is a microcapillary in silicon crystal with a stationary phase and is mechanically connected to receive the mobile phase from the gas injector for the molecular separation of compounds in the sample gas. The detector is mechanically connected to the column for the analysis of the separated compounds of sample gas with electronic means, e.g., ion cell, field emitter and PIN diode. 7 figs.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE PAGES

Shen, Yiwen; Hattink, Maarten; Samadi, Payman; ...

2018-04-13

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Yiwen; Hattink, Maarten; Samadi, Payman

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

NASA Technical Reports Server (NTRS)

Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

1980-01-01

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Compact and low power operation optical switch using silicon-germanium/silicon hetero-structure waveguide.

PubMed

Sekiguchi, Shigeaki; Kurahashi, Teruo; Zhu, Lei; Kawaguchi, Kenichi; Morito, Ken

2012-04-09

We proposed a silicon-based optical switch with a carrier-plasma-induced phase shifter which employs a silicon-germanium (SiGe) / silicon (Si) hetero-structure in the waveguide core. A type-I hetero-interface formed by SiGe and Si is expected to confine carriers effectively in the SiGe waveguide core. The fabricated Mach-Zehnder optical switch shows a low switching power of only 1.53 mW with a compact phase shifter length of 250 μm. The switching time of the optical switch is less than 4.6 ns for the case of a square waveform driving condition, and 1 ns for the case of a pre-emphasis electric driving condition. These results show that our proposed SiGe/Si waveguide structure holds promise for active devices with compact size and low operation power.

A 100-Gb/s noncoherent silicon receiver for PDM-DBPSK/DQPSK signals.

PubMed

Klamkin, Jonathan; Gambini, Fabrizio; Faralli, Stefano; Malacarne, Antonio; Meloni, Gianluca; Berrettini, Gianluca; Contestabile, Giampiero; Potì, Luca

2014-01-27

An integrated noncoherent silicon receiver for demodulation of 100-Gb/s polarization-division multiplexed differential quadrature phase-shift keying and polarization-division multiplexed differential binary phase-shift keying signals is demonstrated. The receiver consists of a 2D surface grating coupler, four Mach-Zehnder delay interferometers and four germanium balanced photodetectors.

Superamphiphobic Silicon-Nanowire-Embedded Microsystem and In-Contact Flow Performance of Gas and Liquid Streams.

PubMed

Ko, Dong-Hyeon; Ren, Wurong; Kim, Jin-Oh; Wang, Jun; Wang, Hao; Sharma, Siddharth; Faustini, Marco; Kim, Dong-Pyo

2016-01-26

Gas and liquid streams are invariably separated either by a solid wall or by a membrane for heat or mass transfer between the gas and liquid streams. Without the separating wall, the gas phase is present as bubbles in liquid or, in a microsystem, as gas plugs between slugs of liquid. Continuous and direct contact between the two moving streams of gas and liquid is quite an efficient way of achieving heat or mass transfer between the two phases. Here, we report a silicon nanowire built-in microsystem in which a liquid stream flows in contact with an underlying gas stream. The upper liquid stream does not penetrate into the lower gas stream due to the superamphiphobic nature of the silicon nanowires built into the bottom wall, thereby preserving the integrity of continuous gas and liquid streams, although they are flowing in contact. Due to the superamphiphobic nature of silicon nanowires, the microsystem provides the best possible interfacial mass transfer known to date between flowing gas and liquid phases, which can achieve excellent chemical performance in two-phase organic syntheses.

New polyurethane/docosane microcapsules as phase-change materials for thermal energy storage.

PubMed

Felix De Castro, Paula; Shchukin, Dmitry G

2015-07-27

Polyurethane microcapsules were prepared by mini-emulsion interfacial polymerization for encapsulation of phase-change material (n-docosane) for energy storage. Three steps were followed with the aim to optimize synthesis conditions of the microcapsules. First, polyurethane microcapsules based on silicone oil core as an inert template with different silicone oil/poly(ethylene glycol)/4,4'-diphenylmethane diisocyanate wt % ratio were synthesized. The surface morphology of the capsules was analyzed by scanning electronic microscopy (SEM) and the chemical nature of the shell was monitored by Fourier transform infrared spectroscopy (FT-IR). Capsules with the silicone oil/poly(ethylene glycol)/4,4'-diphenylmethane diisocyanate 10/20/20 wt % ratio showed the best morphological features and shell stability with average particle size about 4 μm, and were selected for the microencapsulation of the n-docosane. In the second stage, half of the composition of silicone oil was replaced with n-docosane and, finally, the whole silicone oil content was replaced with docosane following the same synthetic procedure used for silicone oil containing capsules. Thermal and cycling stability of the capsules were investigated by thermal gravimetric analysis (TGA) and the phase-change behavior was evaluated by differential scanning calorimetry (DSC). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Formation of iron disilicide on amorphous silicon

NASA Astrophysics Data System (ADS)

Erlesand, U.; Östling, M.; Bodén, K.

1991-11-01

Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski <111> silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

Computational Evaluation of Latent Heat Energy Storage Using a High Temperature Phase Change Material

DTIC Science & Technology

2012-05-01

thermal energy storage system using molten silicon as a phase change material. A cylindrical receiver, absorber, converter system was evaluated using...temperature operation. This work computationally evaluates a thermal energy storage system using molten silicon as a phase change material. A cylindrical... salts ) offering a low power density and a low thermal conductivity, leading to a limited rate of charging and discharging (4). A focus on

Nanostructure size determination in p-type porous silicon by the use of transmission electron diffraction image processing

NASA Astrophysics Data System (ADS)

Ramirez-Porras, A.

2005-06-01

The structure of p-type porous silicon (PS) has been investigated by the use of transmission electron diffraction (TED) microscopy and image processing. The results suggest the presence of well oriented crystalline phases and polycrystalline phases characterized by random orientation. These phases are believed to be formed by spheres with a mean diameter of 4.3 nm and a standard deviation of 1.3 nm.

Stacked Metal Silicide/Silicon Far-Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1988-01-01

Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

Phase transformation as the single-mode mechanical deformation of silicon

DOE PAGES

Wong, Sherman; Haberl, Bianca; Williams, James S.; ...

2015-06-25

The mixture of the metastable body-centered cubic (bc8) and rhombohedral (r8) phases of silicon that is formed via nanoindentation of diamond cubic (dc) silicon exhibits properties that are of scientifc and technological interest. This letter demonstrates that large regions of this mixed phase can be formed in crystalline Si via nanoindentation without signifcant damage to the surrounding crystal. Cross-sectional transmission electron microscopy is used to show that volumes 6 μm wide and up to 650 nm deep can be generated in this way using a spherical tip of ~21.5 μm diameter. The phase transformed region is characterised using both Ramanmore » microspectroscopy and transmission electron microscopy. It is found that uniform loading using large spherical indenters can favor phase transformation as the sole deformation mechanism as long as the maximum load is below a critical level. We suggest that the sluggish nature of the transformation from the dc-Si phase to the metallic (b-Sn) phase normally results in competing deformation mechanisms such as slip and cracking but these can be suppressed by controlled loading conditions.« less

Nanopattern-guided growth of single-crystal silicon on amorphous substrates and high-performance sub-100 nm thin-film transistors for three-dimensional integrated circuits

NASA Astrophysics Data System (ADS)

Gu, Jian

This thesis explores how nanopatterns can be used to control the growth of single-crystal silicon on amorphous substrates at low temperature, with potential applications on flat panel liquid-crystal display and 3-dimensional (3D) integrated circuits. I first present excimer laser annealing of amorphous silicon (a-Si) nanostructures on thermally oxidized silicon wafer for controlled formation of single-crystal silicon islands. Preferential nucleation at pattern center is observed due to substrate enhanced edge heating. Single-grain silicon is obtained in a 50 nm x 100 nm rectangular pattern by super lateral growth (SLG). Narrow lines (such as 20-nm-wide) can serve as artificial heterogeneous nucleation sites during crystallization of large patterns, which could lead to the formation of single-crystal silicon islands in a controlled fashion. In addition to eximer laser annealing, NanoPAtterning and nickel-induced lateral C&barbelow;rystallization (NanoPAC) of a-Si lines is presented. Single-crystal silicon is achieved by NanoPAC. The line width of a-Si affects the grain structure of crystallized silicon lines significantly. Statistics show that single-crystal silicon is formed for all lines with width between 50 nm to 200 nm. Using in situ transmission electron microscopy (TEM), nickel-induced lateral crystallization (Ni-ILC) of a-Si inside a pattern is revealed; lithography-constrained single seeding (LISS) is proposed to explain the single-crystal formation. Intragrain line and two-dimensional defects are also studied. To test the electrical properties of NanoPAC silicon films, sub-100 nm thin-film transistors (TFTs) are fabricated using Patten-controlled crystallization of Ṯhin a-Si channel layer and H&barbelow;igh temperature (850°C) annealing, coined PaTH process. PaTH TFTs show excellent device performance over traditional solid phase crystallized (SPC) TFTs in terms of threshold voltage, threshold voltage roll-off, leakage current, subthreshold swing, on/off current ratio, device-to-device uniformity etc. Two-dimensional device simulations show that PaTH TFTs are comparable to silicon-on-insulator (SOI) devices, making it a promising candidate for the fabrication of future high performance, low-power 3D integrated circuits. Finally, an ultrafast nanolithography technique, laser-assisted direct imprint (LADI) is introduced. LADI shows the ability of patterning nanostructures directly in silicon in nanoseconds with sub-10 nm resolution. The process has potential applications in multiple disciplines, and could be extended to other materials and processes.

Nucleation of the diamond phase in aluminium-solid solutions

NASA Technical Reports Server (NTRS)

Hornbogen, E.; Mukhopadhyay, A. K.; Starke, E. A., Jr.

1993-01-01

Precipitation was studied from fcc solid solutions with silicon, germanium, copper and magnesium. Of all these elements only silicon and germanium form diamond cubic (DC) precipitates in fcc Al. Nucleation of the DC structure is enhanced if both types of atom are dissolved in the fcc lattice. This is interpreted as due to atomic size effects in the prenucleation stage. There are two modes of interference of fourth elements with nucleation of the DC phase in Al + Si, Ge. The formation of the DC phase is hardly affected if the atoms (for example, copper) are rejected from the (Si, Ge)-rich clusters. If additional types of atom are attracted by silicon and/or germanium, DC nuclei are replaced by intermetallic compounds (for example Mg2Si).

Polarization-independent silicon metadevices for efficient optical wavefront control

DOE PAGES

Chong, Katie E.; Staude, Isabelle; James, Anthony Randolph; ...

2015-07-20

In this study, we experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0–2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the latticemore » spacing as a single geometric control parameter.« less

Polarization-independent silicon metadevices for efficient optical wavefront control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chong, Katie E.; Staude, Isabelle; James, Anthony Randolph

In this study, we experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0–2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the latticemore » spacing as a single geometric control parameter.« less

Gold-based electrical interconnections for microelectronic devices

DOEpatents

Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.; Watson, Robert D.

2002-01-01

A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

A low temperature solution phases synthesis for silicon quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bley, R.A.; Yang, Chung-Sung; Kauzlarich, S.M.

Silicon nanoparticles are of interest because of their optoelectronic properties. This warrants finding new methods for making these clusters which are more economical and allow for greater versatility in their mechanical and chemical manipulation. We have produced silicon nanoclusters using a low temperature solution phase method. Our approach uses the Zintl salts KSi, NaSi or Mg{sub 2}Si as the source of silicon anion, This is reacted with tetrachlorosilane, the silicon cation source, in appropriate solvents. These nanoclusters have been terminated with various organic groups via reaction with alkyl-Li or alkylgrignard reagents. High resolution TEM, FTIR, and Raman spectroscopy have beenmore » used to establish the size, structure and surface composition of the particles. UV-vis and photoluminescence have been used to investigate their optical properties. The effect of termination on the photoluminescence will be discussed in detail.« less

Laser-induced periodic surface structures formation on mesoporous silicon from nanoparticles produced by picosecond and femtosecond laser shots

NASA Astrophysics Data System (ADS)

Talbi, Abderazek; Kaya-Boussougou, Sostaine; Sauldubois, Audrey; Stolz, Arnaud; Boulmer-Leborgne, Chantal; Semmar, Nadjib

2017-07-01

This paper deals with the formation of laser-induced periodic surface structures (LIPSS) on mesoporous silicon thin films induced by two laser regimes in the UV range: picosecond and femtosecond. Different LIPSS formation mechanisms from nanoparticles, mainly coalescence and agglomeration, have been evidenced by scanning electron microscopy analysis. The apparition of a liquid phase during both laser interaction at low fluence (20 mJ/cm2) and after a large number of laser pulses (up to 12,000) has been also shown with 100 nm size through incubation effect. Transmission electron microscopy analyses have been conducted to investigate the molten phase structures below and inside LIPSS. Finally, it has shown that LIPSS are composed of amorphous silicon when mesoporous silicon is irradiated by laser beam in both regimes. Nevertheless, mesoporous silicon located between LIPSS stays crystallized.

Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Hanes, M. H.; Davis, J. R.; Rohatgi, A.; Rai-Choudhury, P.; Mollenkopf, H. C.

1981-01-01

The effects of impurities, various thermochemical processes, and any impurity-process interactions upon the performance of terrestrial solar cells are defined. The results form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost benefit relationships for the use of less pure, less costly solar grade silicon.

Process for strengthening silicon based ceramics

DOEpatents

Kim, Hyoun-Ee; Moorhead, A. J.

1993-01-01

A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

Process for strengthening silicon based ceramics

DOEpatents

Kim, Hyoun-Ee; Moorhead, A. J.

1993-04-06

A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

Characterization of Ceramic Vane Materials for 10KW Turboalternator.

DTIC Science & Technology

1983-04-01

eide if necessary end identify by block number) Silicon nitride Gas turbine engine Failure analysis Silicon carbide Mechanical properties Ceramics...silicon carbide, and sil- iconized silicon carbide, being considered for use in a small turbine engine . Chemistry, phase content, and room-temperature...sponsored by USAMERADCOK, Ft. Belvoir, Va., and the engine testing and development was done by Solar Turbines International, San Diego, Calif. ANMHRC

A high performance three-phase enzyme electrode based on superhydrophobic mesoporous silicon nanowire arrays for glucose detection.

PubMed

Xu, Chenlong; Song, Zhiqian; Xiang, Qun; Jin, Jian; Feng, Xinjian

2016-04-14

We describe here a high performance oxygen-rich three-phase enzyme electrode based on superhydrophobic mesoporous silicon nanowire arrays for glucose detection. We demonstrate that its linear detection upper limit is 30 mM, more than 15 times higher than that can be obtained on the normal enzyme-electrode. Notably, the three-phase enzyme electrode output is insensitive to the significant oxygen level fluctuation in analyte solution.

Crystallization of the glassy phase of grain boundaries in silicon nitride

NASA Technical Reports Server (NTRS)

Jefferson, D. A.; Thomas, J. M.; Wen, S.

1984-01-01

Three types of hot-pressed silicon nitride specimens (containing 5wt% Y2O3 and 2wt% Al2O3 additives) which were subjected to different temperature heat treatments were studied by X-ray diffraction, X-ray microanalysis and high resolution electron microscopy. The results indicated that there were phase changes in the grain boundaries after heat treatment and the glassy phase at the grain boundaries was crystallized by heat treatment.

Nature of diffraction fringes originating in the core of core-shell nanoparticle Cu/SiO2 and formation mechanism of the structures

NASA Astrophysics Data System (ADS)

Radnaev, A. R.; Kalashnikov, S. V.; Nomoev, A. V.

2016-05-01

This article is devoted to the analysis of the reasons for the occurrence of diffraction fringes in the cores of the core-shell nanoparticles Cu/SiO2. Moiré and diffraction fringes are observed while studying the nanoparticle cores under a transmission electron microscope. The formation of diffraction fringes is closely connected to the mechanism of nanoparticle formation under study and appears to be its consequence, letting us develop a hypothesis of metastable phase formation in nanoparticle cores. In our opinion, the emergence of diffraction fringes in cores of copper is connected to clasterisation in solid solution oversaturated with silicon α-Cu with the diffused interphase state. Only copper and oxygen (oxygen is presented as oxides in such types of copper as M0 - up to 0.01%; and M1 - up to 0.03%), Copper and silicon with oxygen in a stoichiometric proportion that is only sufficient for silicon dioxide formation (SiO2), Copper and silicon with oxygen in an amount that is sufficient not only for silicon dioxide formation, but also for the dissolution of silicon in the α-Cu solid solution, The amount of silicon in the alloy is not sufficient for the total fixation of oxygen contained in copper, Copper, oxygen and silicon whose contamination is greater than 8 wt.%. In the first case, the top-cut of oxygen in α-Cu solid solution is 0.03% at the temperature of 1066 °C. At slow cooling, secondary recrystallisation leads to the formation of equilibrium Cu2O on the line of the ultimate solubility (Figure 1a - line of maximum solubility of oxygen in copper). In the case of fast cooling fixation of oversaturated, single-phase, non-equilibrium α-Cu, solid solution (heat-treated) takes place, which contains saluted oxygen in an interstice crystal lattice of copper.Room temperature for nonferrous alloys (metals) is sufficient for the diffusive mobility of atoms, but insufficient for the formation of an equilibrium phase and stable phase of Cu2O. This is why diffusion of oxygen atoms in certain areas (clusters) with their increased diffusion of oxygen atoms in certain areas (clusters) with their increased number has been suggested [4]. At the same time, there is a boundary between the stable phase of α-Cu and 'pre-precipitations' containing oxygen, but not having the full value oxide: red copper ore, Cu2O (Figure 1b - solvus of suggested metastable phase). In this case, diffraction fringes can be treated as 'pre-precipitations' in the form of Guinier-Preston zones with diffuse interfaces and a stable α-Cu phase.In the second case, all oxygen and silicon after condensation and crystallisation are fixed in the form of amorphous SiO2 on the core surface of copper. As far as there are no atoms of saluted oxygen or silicon in copper, there are no conditions for the formation of non-equilibrium structures. Consequently, the diffraction pattern of nanoparticle cores is not observed (Figure 2a).In the third case, in the presence of quite a large amount of silicon in the stoichiometric drop, the process of copper oxide formation is not possible, because all the oxygen is used for the production of silicon dioxide since the sensitivity of oxygen to silicon is higher than to copper. This can be explained by the difference in Gibbs energy for the oxidising reaction of components. At the temperature of 25 °C it is 29.0 J/(g mol) - for copper, and 80.8 J/(g mol) for silicon. Silicon dioxide occurring due to the oxygen content in copper will be displaced on the surface of the drop in the form of ash, forming the SiO2 shell [24]. The reason lies in the lower specific density of silicon (approximately 2.2 g/cm3) compared to copper (8.92 g/cm3). This is why, in our case, it is appropriate to study the system where there is no influence of oxygen on the crystallisation of the Cu-Si system [5]. In the cores of such nanoparticles, prominent diffraction fringes can be observed in the α-Cu core (Figure 3b).Analysis of the Cu-Si phase diagram (Figure 3) shows that the maximum solubility of silicon α-Cu at the temperature 552 °C comprises 4.65 wt.% Si. This part of the Cu-Si phase diagram containing up to 8 wt.% silicon represents a classical example of the well-studied phase diagram of Al-Cu components, with the formation of Guinier-Preston zones in the quenched aluminium alloy [25].Single-phase solid solution of silicon α-Cu is fixed at fast cooling in our case. During its formation, cooling and natural ageing of the nanoparticle core, and redistribution of silicon into certain areas, takes place, forming metastable clusters in the matrix with high silicon content. They seem to be 'pre-precipitations' of the γ-phase of copper, though they really are not. In our opinion, diffraction fringes observed in these particles appear to be metastable phases according to Guinier-Preston zone type, i.e. α-Cu area with excessive silicon content.For nonferrous alloys, room temperature is sufficient for diffusive mobility of atoms of the saluted component [19]. Clusters are formed both at the time of cooling and in the long-term process (i.e. natural ageing). Provided that it is not a new phase, but rather the area of the initial matrix α-Cu solid solution enriched with dissolved silicon, such areas may be treated as Guinier-Preston zones. In contrast to intermediate phases with qualitatively new structures, characterised by their own lattices, Guinier-Preston zones have the same lattice as the matrix solution, but are deformed because of the difference in the atomic diameters of the solute and solvent. There is no clear boundary between the zone and solid solution by which it is surrounded. Compared to concentration fluctuations that appear continuously and are diffused by thermal motion, Guinier-Preston zones are stable for a long time (at low temperatures, for an intermediate amount of time). Experiments have shown that, with the increase of ageing duration, zone sizes are also increased. Furthermore, larger zones grow due to dissolution of the smaller ones, i.e. the same way as in coagulation of crystal grains in the solid state (i.e. collective crystallisation) [19]. The number of the zones at the given ageing temperature does not depend on the alloy composition.In some alloys, Guinier-Preston zones appear immediately after heat treatment or even during the cooling after heat treatment. At the same time, intermediate phases and stable phases appear after the incubation interval. All these facts show that Guinier-Preston zones are different to intermediate and stable phases. This is why Guinier-Preston zones are often called 'pre-precipitations' to differentiate them from real precipitations of intermediate and stable phases with a qualitatively new structure [19].Unlike such a structured approach that treats Guinier-Preston zones as 'pre-precipitations' from a thermodynamic point of view, they can be treated as independent stable phases, intermediate between the matrix solution and the stable phase. Consequently, these zones can be treated as the second phase that is in metastable equilibrium with the matrix solution.Moreover, a Guinier-Preston zone in the dual Cu-Si system with limited solubility of silicon in solid state can have its own line limit of solubility km (Figure 3). Metastable phases with a high content of silicon in the α-Cu matrix crystalline lattice appear below this line.Provided that the Guinier-Preston zone is treated as a phase, at the moment of its origin, the change of the free energy of the alloy is as follows: ΔU = -ΔUtot + ΔUsurf + ΔUel (Utot - total energy of the system, Usurf - surface energy of the crystal, Uel - elastic energy component). Because of the coherence property of the zone and the matrix, the ΔUsurf component can be neglected as its value is very small. Then, at relatively high oversaturation, the energy barrier for the origin of the Guinier-Preston zone should be relatively small, which explains the occurrence of clusters immediately after heat treatment or even at the moment of cooling and following natural ageing.The fact that Guinier-Preston zones can easily appear throughout the whole volume of the matrix solid solution and give the structure of equable decay with high density is of high practical value for us (Figure 2b).Thus, diffraction fringes in copper cores of core-shell nanoparticles should be treated as the second metastable phase, which is in equilibrium with the matrix solid solution. Similar to the exfoliation curve km in the solid solution α-Cu, the solvus curve for γ-Cu with intermediate 'pre-precipitations' can be built. The structure of the boundary with the matrix differentiates Guinier-Preston zones from other intermediate phases. These zones are fully coherent extractions, which is why their boundary with the matrix is poorly defined.As the rate accuracy of basal spacing with the method of electronic diffraction does not exceed 1 Å, according to the data it is not possible to evaluate accurately the change dα-Cu in diffraction fringes of the nanoparticle core; phase nonuniformity of structures has been suggested [26]. This is why it is necessary to treat such structures as solid solutions of α-Cu matrix, with the presence of metastable phases with the deformed crystal lattice.In the fourth case, formation of core-shell nanoparticle Cu/SiO2 happens much like in the third case, but due to the fact the amount of silicon is insufficient for the total fixation of oxygen and copper, a transition zone containing Cu2O is formed. Moiré in such particles are observed at the possible placing of double diffraction from two or more crystals of solid solution α-Cu (Figure 4a) [3]. The nanoparticle according to SAED analysis is very much like a 'sandwich': core α-Cu (Figure 4b, basal spacing d(111) ≈ 2.0 Å, corresponding to the tabular data for Cu), transition zone - copper oxide Cu2O (Figure 5a, basal spacing d(111) ≈ 2.4 Å) and shell - amorphous silicon dioxide, according to the EDAX data, the content of oxygen in this area is greater than 12% [11]. High copper oxide (CuO) was discovered only on the surface of the nanoparticle shell SiO2 (Figure 5b, basal spacing d(111) ≈ 2.5 Å).In the fifth case, when the silicon content is from 8.3-8.5 wt.% to 13 wt.%, copper with silicon in solid state at room temperature forms a continuous series of solid solutions of copper α, γ, ɛ and η. Silicon containing more than 13 wt.% copper undergoes eutectic decomposition only at (η″ + Si) [5]; structurally, such a solution contains eutectics in eutectics. In the obtained powder of nanoparticles, there are no modifications of solid solutions of copper, except for α-Cu.

Polymers as Reference Partitioning Phase: Polymer Calibration for an Analytically Operational Approach To Quantify Multimedia Phase Partitioning.

PubMed

Gilbert, Dorothea; Witt, Gesine; Smedes, Foppe; Mayer, Philipp

2016-06-07

Polymers are increasingly applied for the enrichment of hydrophobic organic chemicals (HOCs) from various types of samples and media in many analytical partitioning-based measuring techniques. We propose using polymers as a reference partitioning phase and introduce polymer-polymer partitioning as the basis for a deeper insight into partitioning differences of HOCs between polymers, calibrating analytical methods, and consistency checking of existing and calculation of new partition coefficients. Polymer-polymer partition coefficients were determined for polychlorinated biphenyls (PCBs), polycyclic aromatic hydrocarbons (PAHs), and organochlorine pesticides (OCPs) by equilibrating 13 silicones, including polydimethylsiloxane (PDMS) and low-density polyethylene (LDPE) in methanol-water solutions. Methanol as cosolvent ensured that all polymers reached equilibrium while its effect on the polymers' properties did not significantly affect silicone-silicone partition coefficients. However, we noticed minor cosolvent effects on determined polymer-polymer partition coefficients. Polymer-polymer partition coefficients near unity confirmed identical absorption capacities of several PDMS materials, whereas larger deviations from unity were indicated within the group of silicones and between silicones and LDPE. Uncertainty in polymer volume due to imprecise coating thickness or the presence of fillers was identified as the source of error for partition coefficients. New polymer-based (LDPE-lipid, PDMS-air) and multimedia partition coefficients (lipid-water, air-water) were calculated by applying the new concept of a polymer as reference partitioning phase and by using polymer-polymer partition coefficients as conversion factors. The present study encourages the use of polymer-polymer partition coefficients, recognizing that polymers can serve as a linking third phase for a quantitative understanding of equilibrium partitioning of HOCs between any two phases.

Sapphire Multiple Filament and Large Plate Growth Processes

DTIC Science & Technology

1972-10-01

This is necessary to obtain proper belt tracking. The belts themselves are a silicone / glass fabric manufactured by Dodge Industries, Hoosick Falls...New York. This material is an extremely fine weave fiberglass cloth which is impregnated with silicone rubber. Its properties include high yield...by bonding together (with a silicone adhesive) two 0.010-in. thick strips of Dodge M301 silicone /glass fabric terminating in an angled butt joint to

Mitotic trafficking of silicon microparticles†

PubMed Central

Serda, Rita E.; Ferrati, Silvia; Godin, Biana; Tasciotti, Ennio; Liu, XueWu

2010-01-01

Multistage carriers were recently introduced by our laboratory, with the concurrent objectives of co-localized delivery of multiple therapeutic agents, the “theranostic” integration of bioactive moieties with imaging contrast, and the selective, potentially personalized bypassing of the multiplicity of biological barriers that adversely impact biodistribution of vascularly injected particulates. Mesoporous (“nanoporous”) silicon microparticles were selected as primary carriers in multi-stage devices, with targets including vascular endothelia at pathological lesions. The objective of this study was to evaluate biocompatibility of mesoporous silicon microparticles with endothelial cells using in vitro assays with an emphasis on microparticle compatibility with mitotic events. We observed that vascular endothelial cells, following internalization of silicon microparticles, maintain cellular integrity, as demonstrated by cellular morphology, viability and intact mitotic trafficking of vesicles bearing silicon microparticles. The presence of gold or iron oxide nanoparticles within the porous matrix did not alter the cellular uptake of particles or the viability of endothelial cells subsequent to engulfment of microparticles. Endothelial cells maintained basal levels of IL-6 and IL-8 release in the presence of silicon microparticles. This is the first study that demonstrates polarized, ordered partitioning of endosomes based on tracking microparticles. The finding that mitotic sorting of endosomes is unencumbered by the presence of nanoporous silicon microparticles advocates the use of silicon microparticles for biomedical applications. PMID:20644846

Effect of oil concentration and residence time on the biodegradation of α-pinene vapours in two-liquid phase suspended-growth bioreactors.

PubMed

Montes, María; Veiga, María C; Kennes, Christian

2012-02-20

Recently, research on the use of binary aqueous-organic liquid phase systems for the treatment of polluted air has significantly increased. This paper reports the removal of α-pinene from a waste air stream in a continuous stirred tank bioreactor (CSTB), using either a single-liquid aqueous phase or a mixed aqueous-organic liquid phase. The influence of gas flow rate, load and pollutant concentration was evaluated as well as the effect of the organic to aqueous phase ratio. Continuous experiments were carried out at different inlet α-pinene concentrations, ranging between 0.03 and 25.1 g m⁻³ and at four different flow rates, corresponding to residence times (RTs) of 120 s, 60 s, 36 s and 26 s. The maximum elimination capacities (ECs) reached in the CSTB were 382 g m⁻³ h⁻¹ (without silicone oil) and 608 g m⁻³ h⁻¹ (with 5%v/v silicone oil), corresponding to a 1.6-fold improvement using an aqueous-organic liquid phase. During shock-loads experiments, the performance and stability of the CSTB were enhanced with 5% silicone oil, quickly recovering almost 100% removal efficiency (RE), when pre-shock conditions were restored. The addition of silicone oil acted as a buffer for high α-pinene loads, showing a more stable behaviour in the case of two-liquid-phase systems. Copyright © 2011 Elsevier B.V. All rights reserved.

Induced high-order resonance linewidth shrinking with multiple coupled resonators in silicon-organic hybrid slotted two-dimensional photonic crystals for reduced optical switching power in bistable devices

NASA Astrophysics Data System (ADS)

Hoang, Thu Trang; Ngo, Quang Minh; Vu, Dinh Lam; Le, Khai Q.; Nguyen, Truong Khang; Nguyen, Hieu P. T.

2018-01-01

Shrinking the linewidth of resonances induced by multiple coupled resonators is comprehensively analyzed using the coupled-mode theory (CMT) in time. Two types of coupled resonators under investigation are coupled resonator optical waveguides (CROWs) and side-coupled resonators with waveguide (SCREW). We examine the main parameters influencing on the spectral response such as the number of resonators (n) and the phase shift (φ) between two adjacent resonators. For the CROWs geometry consisting of n coupled resonators, we observe the quality (Q) factor of the right- and left-most resonant lineshapes increases n times larger than that of a single resonator. For the SCREW geometry, relying on the phase shift, sharp, and asymmetric resonant lineshape of the high Q factor a narrow linewidth of the spectral response could be achieved. We employ the finite-difference time-domain (FDTD) method to design and simulate two proposed resonators for practical applications. The proposed coupled resonators in silicon-on-insulator (SOI) slotted two-dimensional (2-D) photonic crystals (PhCs) filled and covered with a low refractive index organic material. Slotted PhC waveguides and cavities are designed to enhance the electromagnetic intensity and to confine the light into small cross-sectional area with low refractive index so that efficient optical devices could be achieved. A good agreement between the theoretical CMT analysis and the FDTD simulation is shown as an evidence for our accurate investigation. All-optical switches based on the CROWs in the SOI slotted 2-D PhC waveguide that are filled and covered by a nonlinear organic cladding to overcome the limitations of its well-known intrinsic properties are also presented. From the calculations, we introduce a dependency of the normalized linewidth of the right-most resonance and its switching power of the all-optical switches on number of resonator, n. This result might provide a guideline for all-optical signal processing on a silicon PhC chip design.

21 CFR 573.940 - Silicon dioxide.

Code of Federal Regulations, 2011 CFR

2011-04-01

..., FEEDS, AND RELATED PRODUCTS FOOD ADDITIVES PERMITTED IN FEED AND DRINKING WATER OF ANIMALS Food Additive Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in accordance with the following conditions: (a) The food additive is manufactured by vapor phase hydrolysis or...

21 CFR 573.940 - Silicon dioxide.

Code of Federal Regulations, 2012 CFR

2012-04-01

..., FEEDS, AND RELATED PRODUCTS FOOD ADDITIVES PERMITTED IN FEED AND DRINKING WATER OF ANIMALS Food Additive Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in accordance with the following conditions: (a) The food additive is manufactured by vapor phase hydrolysis or...

21 CFR 573.940 - Silicon dioxide.

Code of Federal Regulations, 2013 CFR

2013-04-01

..., FEEDS, AND RELATED PRODUCTS FOOD ADDITIVES PERMITTED IN FEED AND DRINKING WATER OF ANIMALS Food Additive Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in accordance with the following conditions: (a) The food additive is manufactured by vapor phase hydrolysis or...

21 CFR 573.940 - Silicon dioxide.

Code of Federal Regulations, 2010 CFR

2010-04-01

..., FEEDS, AND RELATED PRODUCTS FOOD ADDITIVES PERMITTED IN FEED AND DRINKING WATER OF ANIMALS Food Additive Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in accordance with the following conditions: (a) The food additive is manufactured by vapor phase hydrolysis or...

21 CFR 573.940 - Silicon dioxide.

Code of Federal Regulations, 2014 CFR

2014-04-01

..., FEEDS, AND RELATED PRODUCTS FOOD ADDITIVES PERMITTED IN FEED AND DRINKING WATER OF ANIMALS Food Additive Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in accordance with the following conditions: (a) The food additive is manufactured by vapor phase hydrolysis or...

Silicon carbide nanomaterial as a coating for solid-phase microextraction.

PubMed

Tian, Yu; Feng, Juanjuan; Wang, Xiuqin; Sun, Min; Luo, Chuannan

2018-01-26

Silicon carbide has excellent properties, such as corrosion resistance, high strength, oxidation resistance, high temperature, and so on. Based on these properties, silicon carbide was coated on stainless-steel wire and used as a solid-phase microextraction coating, and polycyclic aromatic hydrocarbons were employed as model analytes. Using gas chromatography, some important factors that affect the extraction efficiency were optimized one by one, and an analytical method was established. The analytical method showed wide linear ranges (0.1-30, 0.03-30, and 0.01-30 μg/L) with satisfactory correlation coefficients (0.9922-0.9966) and low detection limits (0.003-0.03 μg/L). To investigate the practical application of the method, rainwater and cigarette ash aqueous solution were collected as real samples for extraction and detection. The results indicate that silicon carbide has excellent application in the field of solid-phase microextraction. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In situ observation of shear-driven amorphization in silicon crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Yang; Zhong, Li; Fan, Feifei

Amorphous materials have attracted great interest in the scientific and technological fields. An amorphous solid usually forms under the externally driven conditions of melt-quenching, irradiation and severe mechanical deformation. However, its dynamic formation process remains elusive. Here we report the in situ atomic-scale observation of dynamic amorphization processes during mechanical straining of nanoscale silicon crystals by high resolution transmission electron microscopy (HRTEM). We observe the shear-driven amorphization (SDA) occurring in a dominant shear band. The SDA involves a sequence of processes starting with the shear-induced diamond-cubic to diamond-hexagonal phase transition that is followed by dislocation nucleation and accumulation in themore » newly formed phase, leading to the formation of amorphous silicon. The SDA formation through diamond-hexagonal phase is rationalized by its structural conformity with the order in the paracrystalline amorphous silicon, which maybe widely applied to diamond-cubic materials. Besides, the activation of SDA is orientation-dependent through the competition between full dislocation nucleation and partial gliding.« less

Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

PubMed

Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

2014-01-08

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

Silicon Oxysulfide, OSiS: Rotational Spectrum, Quantum-Chemical Calculations, and Equilibrium Structure.

PubMed

Thorwirth, Sven; Mück, Leonie Anna; Gauss, Jürgen; Tamassia, Filippo; Lattanzi, Valerio; McCarthy, Michael C

2011-06-02

Silicon oxysulfide, OSiS, and seven of its minor isotopic species have been characterized for the first time in the gas phase at high spectral resolution by means of Fourier transform microwave spectroscopy. The equilibrium structure of OSiS has been determined from the experimental data using calculated vibration-rotation interaction constants. The structural parameters (rO-Si = 1.5064 Å and rSi-S = 1.9133 Å) are in very good agreement with values from high-level quantum chemical calculations using coupled-cluster techniques together with sophisticated additivity and extrapolation schemes. The bond distances in OSiS are very short in comparison with those in SiO and SiS. This unexpected finding is explained by the partial charges calculated for OSiS via a natural population analysis. The results suggest that electrostatic effects rather than multiple bonding are the key factors in determining bonding in this triatomic molecule. The data presented provide the spectroscopic information needed for radio astronomical searches for OSiS.

Revealing lithium-silicide phase transformations in nano-structured silicon-based lithium ion batteries via in situ NMR spectroscopy.

PubMed

Ogata, K; Salager, E; Kerr, C J; Fraser, A E; Ducati, C; Morris, A J; Hofmann, S; Grey, C P

2014-01-01

Nano-structured silicon anodes are attractive alternatives to graphitic carbons in rechargeable Li-ion batteries, owing to their extremely high capacities. Despite their advantages, numerous issues remain to be addressed, the most basic being to understand the complex kinetics and thermodynamics that control the reactions and structural rearrangements. Elucidating this necessitates real-time in situ metrologies, which are highly challenging, if the whole electrode structure is studied at an atomistic level for multiple cycles under realistic cycling conditions. Here we report that Si nanowires grown on a conducting carbon-fibre support provide a robust model battery system that can be studied by (7)Li in situ NMR spectroscopy. The method allows the (de)alloying reactions of the amorphous silicides to be followed in the 2nd cycle and beyond. In combination with density-functional theory calculations, the results provide insight into the amorphous and amorphous-to-crystalline lithium-silicide transformations, particularly those at low voltages, which are highly relevant to practical cycling strategies.

Yield enhancement with DFM

NASA Astrophysics Data System (ADS)

Paek, Seung Weon; Kang, Jae Hyun; Ha, Naya; Kim, Byung-Moo; Jang, Dae-Hyun; Jeon, Junsu; Kim, DaeWook; Chung, Kun Young; Yu, Sung-eun; Park, Joo Hyun; Bae, SangMin; Song, DongSup; Noh, WooYoung; Kim, YoungDuck; Song, HyunSeok; Choi, HungBok; Kim, Kee Sup; Choi, Kyu-Myung; Choi, Woonhyuk; Jeon, JoongWon; Lee, JinWoo; Kim, Ki-Su; Park, SeongHo; Chung, No-Young; Lee, KangDuck; Hong, YoungKi; Kim, BongSeok

2012-03-01

A set of design for manufacturing (DFM) techniques have been developed and applied to 45nm, 32nm and 28nm logic process technologies. A noble technology combined a number of potential confliction of DFM techniques into a comprehensive solution. These techniques work in three phases for design optimization and one phase for silicon diagnostics. In the DFM prevention phase, foundation IP such as standard cells, IO, and memory and P&R tech file are optimized. In the DFM solution phase, which happens during ECO step, auto fixing of process weak patterns and advanced RC extraction are performed. In the DFM polishing phase, post-layout tuning is done to improve manufacturability. DFM analysis enables prioritization of random and systematic failures. The DFM technique presented in this paper has been silicon-proven with three successful tape-outs in Samsung 32nm processes; about 5% improvement in yield was achieved without any notable side effects. Visual inspection of silicon also confirmed the positive effect of the DFM techniques.

Cross-phase modulation-induced spectral broadening in silicon waveguides.

PubMed

Zhang, Yanbing; Husko, Chad; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Schröder, Jochen; Eggleton, Benjamin J

2016-01-11

We analytically and experimentally investigate cross-phase modulation (XPM) in silicon waveguides. In contrast to the well known result in pure Kerr media, the spectral broadening ratio of XPM to self-phase modulation is not two in the presence of either two-photon absorption (TPA) or free carriers. The physical origin of this change is different for each effect. In the case of TPA, this nonlinear absorption attenuates and slightly modifies the pulse shape due to differential absorption in the pulse peak and wings. When free carriers are present two different mechanisms modify the dynamics. First, free-carrier absorption performs a similar role to TPA, but is additionally asymmetric due to the delayed free-carrier response. Second, free-carrier dispersion induces an asymmetric blue phase shift which competes directly with the symmetric Kerr-induced XPM red shift. We confirm this analysis with pump-probe experiments in a silicon photonic crystal waveguide.

Multiple-layered effective medium approximation approach to modeling environmental effects on alumina passivated highly porous silicon nanostructured thin films measured by in-situ Mueller matrix ellipsometry

NASA Astrophysics Data System (ADS)

Mock, Alyssa; Carlson, Timothy; VanDerslice, Jeremy; Mohrmann, Joel; Woollam, John A.; Schubert, Eva; Schubert, Mathias

2017-11-01

Optical changes in alumina passivated highly porous silicon slanted columnar thin films during controlled exposure to toluene vapor are reported. Electron-beam evaporation glancing angle deposition and subsequent atomic layer deposition are utilized to deposit alumina passivated nanostructured porous silicon thin films. In-situ Mueller matrix generalized spectroscopic ellipsometry in an environmental cell is then used to determine changes in optical properties of the nanostructured thin films by inspection of individual Mueller matrix elements, each of which exhibit sensitivity to adsorption. The use of a multiple-layered effective medium approximation model allows for accurate description of the inhomogeneous nature of toluene adsorption onto alumina passivated highly porous silicon slanted columnar thin films.

Condensation heat transfer and flow friction in silicon microchannels

NASA Astrophysics Data System (ADS)

Wu, Huiying; Wu, Xinyu; Qu, Jian; Yu, Mengmeng

2008-11-01

An experimental investigation was performed on heat transfer and flow friction characteristics during steam condensation flow in silicon microchannels. Three sets of trapezoidal silicon microchannels, with hydraulic diameters of 77.5 µm, 93.0 µm and 128.5 µm respectively, were tested under different flow and cooling conditions. It was found that both the condensation heat transfer Nusselt number (Nu) and the condensation two-phase frictional multiplier (phi2Lo) were dependent on the steam Reynolds number (Rev), condensation number (Co) and dimensionless hydraulic diameter (Dh/L). With the increase in the steam Reynolds number, condensation number and dimensionless hydraulic diameter, the condensation Nusselt number increased. However, different variations were observed for the condensation two-phase frictional multiplier. With the increase in the steam Reynolds number and dimensionless hydraulic diameter, the condensation two-phase frictional multiplier decreased, while with the increase in the condensation number, the condensation two-phase frictional multiplier increased. Based on the experimental results, dimensionless correlations for condensation heat transfer and flow friction in silicon microchannels were proposed for the first time. These correlations can be used to determine the condensation heat transfer coefficient and pressure drop in silicon microchannels if the steam mass flow rate, cooling rate and geometric parameters are fixed. It was also found that the condensation heat transfer and flow friction have relations to the injection flow (a transition flow pattern from the annular flow to the slug/bubbly flow), and with injection flow moving toward the outlet, both the condensation heat transfer coefficient and the condensation two-phase frictional multiplier increased.

Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Kuan-Kan; Woon, Wei Yen; Chang, Ruey-Dar

We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.

Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

NASA Astrophysics Data System (ADS)

Hu, Kuan-Kan; Chang, Ruey-Dar; Woon, Wei Yen

2015-10-01

We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

NASA Technical Reports Server (NTRS)

Yang, Jie

2015-01-01

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

Microstructural Influence on Dynamic Properties of Age Hardenable FeMnAl Alloys

DTIC Science & Technology

2011-04-01

precipitated . In alloys without silicon, β-Mn nucleates within the ferrite . In alloys with silicon, a DO3 intermetallic phase precipitates ...Figure 7 compares the 2.24% Si alloy at 950°C and 1000°C. At 950°C the growth of ferrite and the precipitation of an intermetallic phase is apparent...whereas the alloy remains predominately austenite with 2 vol.% ferrite at 1000°C. The intermetallic phase appears as prism-rods precipitated

Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.

PubMed

Dong, Zhenning; André, Yamina; Dubrovskii, Vladimir G; Bougerol, Catherine; Leroux, Christine; Ramdani, Mohammed R; Monier, Guillaume; Trassoudaine, Agnès; Castelluci, Dominique; Gil, Evelyne

2017-03-24

Gold-free GaAs nanowires on silicon substrates can pave the way for monolithic integration of photonic nanodevices with silicon electronic platforms. It is extensively documented that the self-catalyzed approach works well in molecular beam epitaxy but is much more difficult to implement in vapor phase epitaxies. Here, we report the first gallium-catalyzed hydride vapor phase epitaxy growth of long (more than 10 μm) GaAs nanowires on Si(111) substrates with a high integrated growth rate up to 60 μm h -1 and pure zincblende crystal structure. The growth is achieved by combining a low temperature of 600 °C with high gaseous GaCl/As flow ratios to enable dechlorination and formation of gallium droplets. GaAs nanowires exhibit an interesting bottle-like shape with strongly tapered bases, followed by straight tops with radii as small as 5 nm. We present a model that explains the peculiar growth mechanism in which the gallium droplets nucleate and rapidly swell on the silicon surface but then are gradually consumed to reach a stationary size. Our results unravel the necessary conditions for obtaining gallium-catalyzed GaAs nanowires by vapor phase epitaxy techniques.

Sinusoidal nanotextures for light management in silicon thin-film solar cells.

PubMed

Köppel, G; Rech, B; Becker, C

2016-04-28

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

Interior phase transformations and mass-radius relationships of silicon-carbon planets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilson, Hugh F.; Militzer, Burkhard, E-mail: hughfw@gmail.com

2014-09-20

Planets such as 55 Cancri e orbiting stars with a high carbon-to-oxygen ratio may consist primarily of silicon and carbon, with successive layers of carbon, silicon carbide, and iron. The behavior of silicon-carbon materials at the extreme pressures prevalent in planetary interiors, however, has not yet been sufficiently understood. In this work, we use simulations based on density functional theory to determine high-pressure phase transitions in the silicon-carbon system, including the prediction of new stable compounds with Si{sub 2}C and SiC{sub 2} stoichiometry at high pressures. We compute equations of state for these silicon-carbon compounds as a function of pressure,more » and hence derive interior structural models and mass-radius relationships for planets composed of silicon and carbon. Notably, we predict a substantially smaller radius for SiC planets than in previous models, and find that mass radius relationships for SiC planets are indistinguishable from those of silicate planets. We also compute a new equation of state for iron. We rederive interior models for 55 Cancri e and are able to place more stringent restrictions on its composition.« less

Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

2016-11-01

For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

Lithium concentration dependent structure and mechanics of amorphous silicon

NASA Astrophysics Data System (ADS)

Sitinamaluwa, H. S.; Wang, M. C.; Will, G.; Senadeera, W.; Zhang, S.; Yan, C.

2016-06-01

A better understanding of lithium-silicon alloying mechanisms and associated mechanical behavior is essential for the design of Si-based electrodes for Li-ion batteries. Unfortunately, the relationship between the dynamic mechanical response and microstructure evolution during lithiation and delithiation has not been well understood. We use molecular dynamic simulations to investigate lithiated amorphous silicon with a focus to the evolution of its microstructure, phase composition, and stress generation. The results show that the formation of LixSi alloy phase is via different mechanisms, depending on Li concentration. In these alloy phases, the increase in Li concentration results in reduction of modulus of elasticity and fracture strength but increase in ductility in tension. For a LixSi system with uniform Li distribution, volume change induced stress is well below the fracture strength in tension.

Enhanced densification under shock compression in porous silicon

NASA Astrophysics Data System (ADS)

Lane, J. Matthew D.; Thompson, Aidan P.; Vogler, Tracy J.

2014-10-01

Under shock compression, most porous materials exhibit lower densities for a given pressure than that of a full-dense sample of the same material. However, some porous materials exhibit an anomalous, or enhanced, densification under shock compression. We demonstrate a molecular mechanism that drives this behavior. We also present evidence from atomistic simulation that silicon belongs to this anomalous class of materials. Atomistic simulations indicate that local shear strain in the neighborhood of collapsing pores nucleates a local solid-solid phase transformation even when bulk pressures are below the thermodynamic phase transformation pressure. This metastable, local, and partial, solid-solid phase transformation, which accounts for the enhanced densification in silicon, is driven by the local stress state near the void, not equilibrium thermodynamics. This mechanism may also explain the phenomenon in other covalently bonded materials.

Phase equilibrium in system Ti-Si-C-B and synthesis of MAX phase layers in vacuum under the influence of electron beam

NASA Astrophysics Data System (ADS)

Smirnyagina, N. N.; Khaltanova, V. M.; Dasheev, D. E.; Lapina, A. E.

2017-05-01

Composite layers on the basis of carbides and borides the titan and silicon on titanic alloy VТ-1 are generated at diffused saturation by electron beam treatment in vacuum. Formation in a composite of MAX phase Ti3SiC2 is shown. Thermodynamic research of phase equilibrium in systems Ti-Si-C and Ti-B-C in the conditions of high vacuum is executed. The thermodynamics, formation mechanisms of superfirm layers borides and carbides of the titan and silicon are investigated.

Thermodynamic modelling of phase equilibrium in system Ti-B-Si-C, synthesis and phases composition of borides and carbides layers on titanic alloyVT-1 at electron beam treatment in vacuum

NASA Astrophysics Data System (ADS)

Smirnyagina, N. N.; Khaltanova, V. M.; Lapina, A. E.; Dasheev, D. E.

2017-01-01

Composite layers on the basis of carbides and borides the titan and silicon on titanic alloy VT-1 are generated at diffused saturation in vacuum. Formation in a composite of MAX phase Ti3SiC2 is shown. Thermodynamic research of phase equilibrium in systems Ti-Si-C and Ti-B-C in the conditions of high vacuum is executed. The thermodynamics, formation mechanisms of superfirm layers borides and carbides of the titan and silicon are investigated.

RFIC's challenges for third-generation wireless systems

NASA Astrophysics Data System (ADS)

Boric-Lubecke, Olga; Lin, Jenshan; Gould, Penny; Kermalli, Munawar

2001-11-01

Third generation (3G) cellular wireless systems are envisioned to offer low cost, high-capacity mobile communications with data rates of up to 2 Mbit/s, with global roaming and advanced data services. Besides adding mobility to the internet, 3G systems will provide location-based services, as well as personalized information and entertainment. Low cost, high dynamic-range radios, both for base stations (BS) and for mobile stations (MS) are required to enable worldwide deployment of such networks. A receiver's reference sensitivity, intermodulation characteristics, and blocking characteristics, set by a wireless standard, define performance requirements of individual components of a receiver front end. Since base station handles multiple signals from various distances simultaneously, its radio specifications are significantly more demanding than those for mobile devices. While high level of integration has already been achieved for second generation hand-sets using low-cost silicon technologies, the cost and size reduction of base stations still remains a challenge and necessity. While silicon RFIC technology is steadily improving, it is still difficult to achieve noise figure (NF), linearity, and phase noise requirements with presently available devices. This paper will discuss base station specification for 2G (GSM) and 3G (UMTS) systems, as well as the feasibility of implementing base station radios in low-cost silicon processes.

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet.

PubMed

Warren, Joshua A; Riddle, Matthew E; Graziano, Diane J; Das, Sujit; Upadhyayula, Venkata K K; Masanet, Eric; Cresko, Joe

2015-09-01

Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015-2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2-20 billion GJ depending on market adoption dynamics.

Progress in thin-film silicon solar cells based on photonic-crystal structures

NASA Astrophysics Data System (ADS)

Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

2018-06-01

We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

NASA Astrophysics Data System (ADS)

Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, K.

2017-09-01

We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.

Characterization of SiC Fiber (SCS-6) Reinforced-Reaction-Formed Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Singh, M.; Dickerson, R. M.

1996-01-01

Silicon carbide fiber (SCS-6) reinforced-reaction-formed silicon carbide matrix composites were fabricated using a reaction-forming process. Silicon-2 at.% niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bimodal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon, and silicon. Fiber pushout tests on these composites determined a debond stress of approximately 67 MPa and a frictional stress of approximately 60 MPa. A typical four-point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pullout.

Apparatus for melt growth of crystalline semiconductor sheets

DOEpatents

Ciszek, Theodore F.; Hurd, Jeffery L.

1986-01-01

An economical method is presented for forming thin sheets of crystalline silicon suitable for use in a photovoltaic conversion cell by solidification from the liquid phase. Two spatially separated, generally coplanar filaments wettable by liquid silicon and joined together at the end by a bridge member are immersed in a silicon melt and then slowly withdrawn from the melt so that a silicon crystal is grown between the edge of the bridge and the filaments.

Sub-15 femtosecond laser-induced nanostructures emerging on Si(100) surfaces immersed in water: analysis of structural phases

NASA Astrophysics Data System (ADS)

Straub, M.; Schüle, M.; Afshar, M.; Feili, D.; Seidel, H.; König, K.

2014-04-01

Nanoscale periodic rifts and subwavelength ripples as well as randomly nanoporous surface structures were generated on Si(100) surfaces immersed in water by tightly focused high-repetition rate sub-15 femtosecond sub-nanojoule pulsed Ti:sapphire laser light. Subsequent to laser processing, silicon oxide nanoparticles, which originated from a reaction of ablated silicon with water and aggregated on the exposed areas, were etched off by hydrofluoric acid. The structural phases of the three types of silicon nanostructures were investigated by transmission electron microscopy diffraction images recorded on focused ion beam sections. On nanorift patterns, which were produced at radiant exposure extremely close to the ablation threshold, only the ideal Si-I phase at its original bulk orientation was observed. Electron diffraction micrographs of periodic ripples, which were generated at slightly higher radiant exposure, revealed a compression of Si-I in the vertical direction by 6 %, which is attributed to recoil pressure acting during ablation. However, transitions to the high-pressure phase Si-II, which implies compression in the same direction at pressures in excess of 10 GPa, to the metastable phases Si-III or Si-IV that arise from Si-II on pressure relief or to other high-pressure phases (Si-V-Si-XII) were not observed. The nanoporous surfaces featured Si-I material with grains of resolidified silicon occurring at lattice orientations different from the bulk. Characteristic orientational relationships as well as small-angle grain boundaries reflected the rapid crystal growth on the substrate.

Biodegradation of high concentrations of benzene vapors in a two phase partition stirred tank bioreactor.

PubMed

Karimi, Ali; Golbabaei, Farideh; Neghab, Masoud; Pourmand, Mohammad Reza; Nikpey, Ahmad; Mohammad, Kazem; Mehrnia, Momammad Reza

2013-01-15

The present study examined the biodegradation rate of benzene vapors in a two phase stirred tank bioreactor by a bacterial consortium obtained from wastewater of an oil industry refinery house. Initially, the ability of the microbial consortium for degrading benzene was evaluated before running the bioreactor. The gaseous samples from inlet and outlet of bioreactor were directly injected into a gas chromatograph to determine benzene concentrations. Carbone oxide concentration at the inlet and outlet of bioreactor were also measured with a CO2 meter to determine the mineralization rate of benzene. Influence of the second non-aqueous phase (silicon oil) has been emphasized, so at the first stage the removal efficiency (RE) and elimination capacity (EC) of benzene vapors were evaluated without any organic phase and in the second stage, 10% of silicon oil was added to bioreactor media as an organic phase. Addition of silicon oil increased the biodegradation performance up to an inlet loading of 5580 mg/m3, a condition at which, the elimination capacity and removal efficiency were 181 g/m3/h and 95% respectively. The elimination rate of benzene increased by 38% in the presence of 10% of silicone oil. The finding of this study demonstrated that two phase partition bioreactors (TPPBs) are potentially effective tools for the treatment of gas streams contaminated with high concentrations of poorly water soluble organic contaminant, such as benzene.

Ultrastructural effects of silicone oil on the clear crystalline lens of the human eye.

PubMed

Soliman, Wael; Sharaf, Mohamed; Abdelazeem, Khaled; El-Gamal, Dalia; Nafady, Allam

2018-03-01

To evaluate light and electron microscopic changes of the anterior capsule and its epithelium after clear lens extraction of vitrectomized myopic eyes with silicone oil tamponade. This prospective, controlled, non-randomized, interventional study included 20 anterior lens capsular specimens that were excised during combined clear lens extraction and silicone oil removal from previously vitrectomized highly myopic patients with silicone oil tamponade for previous retinal detachment surgeries. The specimens were examined via light microscopy and electron microscopy and compared with 20 anterior capsule specimens removed during clear lens extraction of non-vitrectomized highly myopic eyes. Light microscopic examination of clear lens anterior capsule specimens of vitrectomized myopic eyes filled with silicone oil showed relatively more flat cells with irregular outline of lens' epithelial cells with wide intercellular spaces, deeply stained nuclei, and multiple intracytoplasmic vacuoles. Scanning electron microscopy revealed collagenous surfaces filled with multiple pits, depressions, and abnormal deposits. Transmission electron microscopy revealed lens epithelial cells with apoptotic changes, many cytoplasmic vacuoles, and filopodia-like protrusions between lens epithelial cells and the capsule. Epithelial proliferation and multilayering were also observed. silicone oil may play a role in the development of apoptotic and histopathological changes in clear lens epithelial cells. Clarity of the lens at the time of silicone oil removal does not indicate an absence of cataractous changes. We found justification of combined clear lens extraction and silicone oil removal or combined phacovitrectomy when silicone oil injection is planned, but further long-term studies with larger patient groups are required.

Periodically poled silicon

NASA Astrophysics Data System (ADS)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Jalali, Bahram

2009-03-01

We propose a new class of photonic devices based on periodic stress fields in silicon that enable second-order nonlinearity as well as quasi-phase matching. Periodically poled silicon (PePSi) adds the periodic poling capability to silicon photonics and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on second-order nonlinear effects. As an example of the utility of the PePSi technology, we present simulations showing that midwave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50%.

Two-dimensional free-space beam steering with an optical phased array on silicon-on-insulator.

PubMed

Doylend, J K; Heck, M J R; Bovington, J T; Peters, J D; Coldren, L A; Bowers, J E

2011-10-24

We demonstrate a 16-channel, independently tuned waveguide surface grating optical phased array in silicon for two dimensional beam steering with a total field of view of 20° x 14°, beam width of 0.6° x 1.6°, and full-window background peak suppression of 10 dB. © 2011 Optical Society of America

Silicon waveguide optical switch with embedded phase change material.

PubMed

Miller, Kevin J; Hallman, Kent A; Haglund, Richard F; Weiss, Sharon M

2017-10-30

Phase-change materials (PCMs) have emerged as promising active elements in silicon (Si) photonic systems. In this work, we design, fabricate, and characterize a hybrid Si-PCM optical switch. By integrating vanadium dioxide (a PCM) within a Si photonic waveguide, in a non-resonant geometry, we achieve ~10 dB broadband optical contrast with a PCM length of 500 nm using thermal actuation.

Combination of sorption properties of polydimethylsiloxane and solid-phase extraction sorbents in a single composite material for the passive sampling of polar and apolar pesticides in water.

PubMed

Martin, Alexis; Margoum, Christelle; Coquery, Marina; Randon, Jérôme

2016-10-01

Passive sampling techniques have been developed as an alternative method for in situ integrative monitoring of trace levels of neutral pesticides in environmental waters. The objective of this work was to develop a new receiving phase for pesticides with a wide range of polarities in a single step. We describe the development of three new composite silicone rubbers, combining polydimethylsiloxane mechanical and sorption properties with solid-phase extraction sorbents, prepared as a receiving phase for passive sampling. A composite silicone rubber composed of polydimethylsiloxane/poly(divinylbenzene-co-N-vinylpyrrolidone) was selected by batch experiments for its high sorption properties for pesticides with octanol-water partition coefficients ranging from 2.3 to 5.5. We named this composite material "Polar/Apolar Composite Silicone Rubber". A structural study by scanning electron microscopy confirmed the homogeneous dispersion of the sorbent particles and the encapsulation of particles within the polydimethylsiloxane matrix. We also demonstrate that this composite material is resistant to common solvents used for the back-extraction of analytes and has a maximal resistance temperature of 350°C. Therefore, the characteristics of the "Polar/Apolar Composite Silicone Rubber" meet most of the criteria for use as a receiving phase for the passive sampling of pesticides. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-sensitivity x-ray mask damage studies employing holographic gratings and phase-shifting interferometry

NASA Astrophysics Data System (ADS)

Hansen, Matthew E.; Cerrina, Franco

1994-05-01

A high-sensitivity holographic and interferometric metrology developed at the Center for X- ray Lithography (CXrL) has been employed to investigate in-plane distortions (IPD) produced in x-ray mask materials. This metrology has been applied to characterize damage to x-ray mask materials exposed to synchrotron radiation. X-ray mask damage and accelerated mask damage studies on silicon nitride and silicon carbide were conducted on the Aladdin ES-1 and ES-2 beamline exposure stations, respectively. Accumulated in-plane distortions due to x-ray irradiation were extracted from the incremental interferometric phase maps to yield IPD vs. dose curves for silicon nitride mask blanks. Silicon carbide mask blanks were subjected to accelerated mask damage in the high flux 2 mm X 2 mm beam of the ES-2 exposure station. An accelerated damage study of silicon carbide has shown no in-plane distortion for an accumulated dose of 800 kJ/cm2 with a measurement sensitivity of less than 5 nm.

The behavior of single-crystal silicon to dynamic loading using in-situ X-ray diffraction and phase contrast imaging

NASA Astrophysics Data System (ADS)

Lee, Hae Ja; Xing, Zhou; Galtier, Eric; Arnold, Brice; Granados, Eduardo; Brown, Shaughnessy B.; Tavella, Franz; McBride, Emma; Fry, Alan; Nagler, Bob; Schropp, Andreas; Seiboth, Frank; Samberg, Dirk; Schroer, Christian; Gleason, Arianna E.; Higginbotham, Andrew

Hydrostatic and uniaxial compression studies have revealed that crystalline silicon undergoes phase transitions from a cubic diamond structure to a variety of phases including orthorhombic Imma phase, body-centered tetragonal phase, and a hexagonal primitive phase. The dynamic response of silicon at high pressure, however, is not well understood. Phase contrast imaging has proven to be a powerful tool for probing density changes caused by the shock propagation into a material. In order to characterize the elastic and phase transitions, we image shock waves in Si with high spatial resolution using the LCLS X-ray free electron laser and Matter in Extreme Conditions instrument. In this study, the long pulse optical laser with pseudo-flat top shape creates high pressures up to 60 GPa. We measure the crystal structure by observing X-ray diffraction orthogonal to the shock propagation direction over a range of pressures. We describe the capability of simultaneously performing phase contrast imaging and in situ X-ray diffraction during shock loading and discuss the dynamic response of Si in high-pressure phases Use of the Linac Coherent Light Source (LCLS), SLAC National Accelerator Laboratory, is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-76SF00515. The MEC instrument is supported by.

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

NASA Astrophysics Data System (ADS)

Ahmad, I.; Temple, M. P.; Kallis, A.; Wojdak, M.; Oton, C. J.; Barbier, D.; Saleh, H.; Kenyon, A. J.; Loh, W. H.

2008-12-01

Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be avoided by patterning the films into ridges, significant stress remains along the ridge axis. Measurements of erbium photoluminescence sensitized by silicon nanoclusters in stressed and relaxed films suggest an important role for internal film stresses in promoting the phase separation of excess silicon into nanoclusters, which has previously been thought of as a thermally driven process.

Methods for testing Zernike phase plates and a report on silicon-based phase plates with reduced charging and improved ageing characteristics

PubMed Central

Marko, Michael; Meng, Xing; Hsieh, Chyongere; Roussie, James; Striemer, Christopher

2013-01-01

Imaging with Zernike phase plates is increasingly being used in cryo-TEM tomography and cryo-EM single-particle applications. However, rapid ageing of the phase plates, together with the cost and effort in producing them, present serious obstacles to widespread adoption. We are experimenting with phase plates based on silicon chips that have thin windows; such phase plates could be mass-produced and made available at moderate cost. The windows are coated with conductive layers to reduce charging, and this considerably extends the useful life of the phase plates compared to traditional pure-carbon phase plates. However, a compromise must be reached between robustness and transmission through the phase-plate film. Details are given on testing phase-plate performance by means of imaging an amorphous thin film and evaluating the power spectra of the images. PMID:23994351

Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veith-Wolf, Boris; Wang, Jianhui; Hannu-Kuure, Milja

2015-02-02

We apply non-vacuum processing to deposit dielectric capping layers on top of ultrathin atomic-layer-deposited aluminum oxide (AlO{sub x}) films, used for the rear surface passivation of high-efficiency crystalline silicon solar cells. We examine various siloxane-based liquid-phase-deposited (LPD) materials. Our optimized AlO{sub x}/LPD stacks show an excellent thermal and chemical stability against aluminum metal paste, as demonstrated by measured surface recombination velocities below 10 cm/s on 1.3 Ωcm p-type silicon wafers after firing in a belt-line furnace with screen-printed aluminum paste on top. Implementation of the optimized LPD layers into an industrial-type screen-printing solar cell process results in energy conversion efficiencies ofmore » up to 19.8% on p-type Czochralski silicon.« less

Synthesis of tritium breeder ceramics from metallic lithium

NASA Astrophysics Data System (ADS)

Knitter, R.; Kolb, M. H. H.; Odemer, C.

2012-01-01

For the fabrication of Li-6 enriched ceramic breeder materials for ITER, the availability of Li-6 enriched compounds is limited, and metallic Li-6 is the most widely available compound. As metallic lithium cannot be used directly in ceramic fabrication processes, we investigated different syntheses to obtain lithium orthosilicate or lithium metatitanate directly from molten lithium. In exothermic reactions of molten lithium with silicon, silica, or titania, several intermediate or precursor phases were observed under argon that could easily be transformed to the desired ceramic phases by a subsequent heat treatment under air. The reaction steps and the resulting phases were studied by differential scanning calorimetry and X-ray diffractometry. The synthesis from lithium and silicon seems to be especially suited for the production of larger quantities and has the advantage that silicon is available with a very high grade of purity.

Spreading of Emulsions on Glass Substrates

NASA Astrophysics Data System (ADS)

Mohammad Karim, Alireza; Kavehpour, Pirouz

2012-11-01

The wettability of emulsions is an important factor with explicit influence in an extensive variety of industrial applications ranging from the petroleum to food industries. Surprisingly, there is no comprehensive study of emulsion spreading to date; this is due to the complexity of the structure of the emulsions and non-homogeneity of the dispersed phase bubbles in size as well as distribution through the emulsion. The spreading of water/silicone oil emulsions on glass substrates was investigated. The emulsions were prepared with varying volume fractions of water dispersed in silicone oil, with addition of small amounts of surfactant to stabilize the emulsion structure. The time dependent variation of dynamic contact angle, base diameter, and the spreading rate of the droplets of an emulsion are different from a pure substance. The effect of water/silicone oil weight percentage as well as the droplet size and dispersed phase bubble size were also investigated. The weight percentage of water/silicone oil emulsion and droplet size did not have significant influence on the spreading dynamics; however the dispersed phase drop size affected the spreading dynamics substantially.

Method and apparatus for melt growth of crystalline semiconductor sheets

DOEpatents

Ciszek, T.F.; Hurd, J.L.

1981-02-25

An economical method is presented for forming thin sheets of crystalline silicon suitable for use in a photovoltaic conversion cell by solidification from the liquid phase. Two spatially separated, generally coplanar filaments wettable by liquid silicon and joined together at the end by a bridge member are immersed in a silicon melt and then slowly withdrawn from the melt so that a silicon crystal is grown between the edge of the bridge and the filaments.

Disposal of metal fragments released during polycrystalline slicing by multi-wire saw

NASA Astrophysics Data System (ADS)

Boutouchent-Guerfi, N.; Drouiche, N.; Medjahed, S.; Ould-Hamou, M.; Sahraoui, F.

2016-08-01

The environmental and economic impacts linked with solar systems are largely based on discharges of slurry generated during the various stages of sawing and cutting ingots. These discharges into the environment are subject to the general regulations on hazardous and special industrial waste disposal. Therefore, they should not be abandoned or burned in open air. The cutting of Silicon ingots leads to the production of Silicon wafers additional costs, losing more than 30% of Silicon material. Abrasive grains (Silicon Carbide) trapped between the wire and the block of Silicon need to be removed by various mechanisms to be later evacuated by slurry fragments. In the interest of decreasing operational costs during polycrystalline ingot slicing at Semiconductors Research Center, and, avoid environmental problems; it is necessary to recover the solar grade Silicon from the Silicon sawing waste. For this reason, the removal of metal fragments has become a preliminary requirement to regenerate the slurry; in addition, the solid phase needs to be separated from the liquid phase after the dissolution PEG with the solvent. In the present study, magnetic separation and centrifugation methods were adopted for metals removal, followed by the analysis of some operating parameters such as: washing time, pH, and initial concentration of Silicon. Finally, analytical, morphological and basic methods were performed in order to evaluate the efficiency of the process undertaken.

Sr-Al-Si co-segregated regions in eutectic Si phase of Sr-modified Al-10Si alloy.

PubMed

Timpel, M; Wanderka, N; Schlesiger, R; Yamamoto, T; Isheim, D; Schmitz, G; Matsumura, S; Banhart, J

2013-09-01

The addition of 200 ppm strontium to an Al-10 wt% Si casting alloy changes the morphology of the eutectic silicon phase from coarse plate-like to fine fibrous networks. In order to clarify this modification mechanism the location of Sr within the eutectic Si phase has been investigated by a combination of high-resolution methods. Whereas three-dimensional atom probe tomography allows us to visualise the distribution of Sr on the atomic scale and to analyse its local enrichment, transmission electron microscopy yields information about the crystallographic nature of segregated regions. Segregations with two kinds of morphologies were found at the intersections of Si twin lamellae: Sr-Al-Si co-segregations of rod-like morphology and Al-rich regions of spherical morphology. Both are responsible for the formation of a high density of multiple twins and promote the anisotropic growth of the eutectic Si phase in specific crystallographic directions during solidification. The experimental findings are related to the previously postulated mechanism of "impurity induced twinning". Copyright © 2012 Elsevier B.V. All rights reserved.

Silicon Carbide (SiC) Device and Module Reliability, Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field

DTIC Science & Technology

2016-05-01

AFRL-RQ-WP-TR-2016-0108 SILICON CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled... Heat Input to an Acceleration Field Kirk L. Yerkes (AFRL/RQQI) and James D. Scofield (AFRL/RQQE) Flight Systems Integration Branch (AFRL/RQQI...CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field 5a

Hypercalcemia in a bodybuilder with cosmetic silicone injections.

PubMed

Hamadeh, Majdi; Fares, Jawad; Maatouk, Khalil; Darwish, Mohamad

2018-04-13

Granulomatous hypercalcemia due to silicone injections is a rare disease with scarce literature. We present a case of a 35-year-old Caucasian male bodybuilder with multiple silicone injections in his upper extremities who developed hypercalcemia and urinary symptoms. He necessitated two sessions of dialysis. A biopsy of the upper arm showed granulomatous tissue. Corticosteroids were administered to relieve symptoms and reverse laboratory abnormalities. Silicone-induced hypercalcemia should be on high alert because of the increasing trend of body contour enhancements with injections, implants and fillers.

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

NASA Technical Reports Server (NTRS)

Reck, Theodore (Inventor); Perez, Jose Vicente Siles (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Jung-Kubiak, Cecile (Inventor); Mehdi, Imran (Inventor); Chattopadhyay, Goutam (Inventor); Lin, Robert H. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Characterization of SiC (SCS-6) Fiber Reinforced Reaction-Formed Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay; Dickerson, Robert M.

1995-01-01

Silicon carbide (SCS-6) fiber reinforced-reaction formed silicon carbide matrix composites were fabricated using NASA's reaction forming process. Silicon-2 at a percent of niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bi-modal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon and silicon. Fiber push-out tests on these composites determined a debond stress of approx. 67 MPa and a frictional stress of approx. 60 MPa. A typical four point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pull out.

Prevention of thaumasite formation in concrete exposed to sulphate attack

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bellmann, F.; Stark, J.

2007-08-15

Thermodynamic calculations were performed to investigate at which sulphate ion concentration hardened concrete can be damaged by the formation of thaumasite. It is indicated that thaumasite can be formed from C-S-H phases and portlandite at very low sulphate concentrations in an aggressive solution. Higher sulphate ion concentrations are required in the absence of portlandite. Still higher sulphate ion concentrations are needed if C-S-H phases with a low calcium/silicon ratio are consumed. Therefore, it is suggested that the formation of thaumasite at low and moderate sulphate concentrations in the attacking solution can be avoided by lowering the calcium/silicon ratio in themore » C-S-H phases. This can be achieved by the addition of pozzolanic and latently hydraulic admixtures. During the reaction of these materials, portlandite is consumed and the calcium/silicon ratio of the C-S-H phases is lowered. The aforementioned concept was confirmed by studies published in the literature and also by experimental investigations reported in this paper.« less

Graphene-silicon phase modulators with gigahertz bandwidth

NASA Astrophysics Data System (ADS)

Sorianello, V.; Midrio, M.; Contestabile, G.; Asselberghs, I.; Van Campenhout, J.; Huyghebaert, C.; Goykhman, I.; Ott, A. K.; Ferrari, A. C.; Romagnoli, M.

2018-01-01

The modulator is a key component in optical communications. Several graphene-based amplitude modulators have been reported based on electro-absorption. However, graphene phase modulators (GPMs) are necessary for functions such as applying complex modulation formats or making switches or phased arrays. Here, we present a 10 Gb s-1 GPM integrated in a Mach-Zehnder interferometer configuration. This is a compact device based on a graphene-insulator-silicon capacitor, with a phase-shifter length of 300 μm and extinction ratio of 35 dB. The GPM has a modulation efficiency of 0.28 V cm at 1,550 nm. It has 5 GHz electro-optical bandwidth and operates at 10 Gb s-1 with 2 V peak-to-peak driving voltage in a push-pull configuration for binary transmission of a non-return-to-zero data stream over 50 km of single-mode fibre. This device is the key building block for graphene-based integrated photonics, enabling compact and energy-efficient hybrid graphene-silicon modulators for telecom, datacom and other applications.

Development of a model and computer code to describe solar grade silicon production processes

NASA Technical Reports Server (NTRS)

Gould, R. K.; Srivastava, R.

1979-01-01

Two computer codes were developed for describing flow reactors in which high purity, solar grade silicon is produced via reduction of gaseous silicon halides. The first is the CHEMPART code, an axisymmetric, marching code which treats two phase flows with models describing detailed gas-phase chemical kinetics, particle formation, and particle growth. It can be used to described flow reactors in which reactants, mix, react, and form a particulate phase. Detailed radial gas-phase composition, temperature, velocity, and particle size distribution profiles are computed. Also, deposition of heat, momentum, and mass (either particulate or vapor) on reactor walls is described. The second code is a modified version of the GENMIX boundary layer code which is used to compute rates of heat, momentum, and mass transfer to the reactor walls. This code lacks the detailed chemical kinetics and particle handling features of the CHEMPART code but has the virtue of running much more rapidly than CHEMPART, while treating the phenomena occurring in the boundary layer in more detail.

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) ormore » silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.« less

The FAZIA project in Europe: R&D phase

NASA Astrophysics Data System (ADS)

Bougault, R.; Poggi, G.; Barlini, S.; Borderie, B.; Casini, G.; Chbihi, A.; Le Neindre, N.; Pârlog, M.; Pasquali, G.; Piantelli, S.; Sosin, Z.; Ademard, G.; Alba, R.; Anastasio, A.; Barbey, S.; Bardelli, L.; Bini, M.; Boiano, A.; Boisjoli, M.; Bonnet, E.; Borcea, R.; Bougard, B.; Brulin, G.; Bruno, M.; Carboni, S.; Cassese, C.; Cassese, F.; Cinausero, M.; Ciolacu, L.; Cruceru, I.; Cruceru, M.; D'Aquino, B.; De Fazio, B.; Degerlier, M.; Desrues, P.; Di Meo, P.; Dueñas, J. A.; Edelbruck, P.; Energico, S.; Falorsi, M.; Frankland, J. D.; Galichet, E.; Gasior, K.; Gramegna, F.; Giordano, R.; Gruyer, D.; Grzeszczuk, A.; Guerzoni, M.; Hamrita, H.; Huss, C.; Kajetanowicz, M.; Korcyl, K.; Kordyasz, A.; Kozik, T.; Kulig, P.; Lavergne, L.; Legouée, E.; Lopez, O.; Łukasik, J.; Maiolino, C.; Marchi, T.; Marini, P.; Martel, I.; Masone, V.; Meoli, A.; Merrer, Y.; Morelli, L.; Negoita, F.; Olmi, A.; Ordine, A.; Paduano, G.; Pain, C.; Pałka, M.; Passeggio, G.; Pastore, G.; Pawłowski, P.; Petcu, M.; Petrascu, H.; Piasecki, E.; Pontoriere, G.; Rauly, E.; Rivet, M. F.; Rocco, R.; Rosato, E.; Roscilli, L.; Scarlini, E.; Salomon, F.; Santonocito, D.; Seredov, V.; Serra, S.; Sierpowski, D.; Spadaccini, G.; Spitaels, C.; Stefanini, A. A.; Tobia, G.; Tortone, G.; Twaróg, T.; Valdré, S.; Vanzanella, A.; Vanzanella, E.; Vient, E.; Vigilante, M.; Vitiello, G.; Wanlin, E.; Wieloch, A.; Zipper, W.

2014-02-01

The goal of the FAZIA Collaboration is the design of a new-generation 4 π detector array for heavy-ion collisions with radioactive beams. This article summarizes the main results of the R&D phase, devoted to the search for significant improvements of the techniques for charge and mass identification of reaction products. This was obtained by means of a systematic study of the basic detection module, consisting of two transmission-mounted silicon detectors followed by a CsI(Tl) scintillator. Significant improvements in ΔE- E and pulse-shape techniques were obtained by controlling the doping homogeneity and the cutting angles of silicon and by putting severe constraints on thickness uniformity. Purposely designed digital electronics contributed to identification quality. The issue of possible degradation related to radiation damage of silicon was also addressed. The experimental activity was accompanied by studies on the physics governing signal evolution in silicon. The good identification quality obtained with the prototypes during the R&D phase, allowed us to investigate also some aspects of isospin physics, namely isospin transport and odd-even staggering. Now, after the conclusion of the R&D period, the FAZIA Collaboration has entered the demonstrator phase, with the aim of verifying the applicability of the devised solutions for the realization of a larger-scale experimental set-up.

Silicon Qubits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ladd, Thaddeus D.; Carroll, Malcolm S.

2018-02-28

Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of amore » single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.« less

Roll up nanowire battery from silicon chips

PubMed Central

Vlad, Alexandru; Reddy, Arava Leela Mohana; Ajayan, Anakha; Singh, Neelam; Gohy, Jean-François; Melinte, Sorin; Ajayan, Pulickel M.

2012-01-01

Here we report an approach to roll out Li-ion battery components from silicon chips by a continuous and repeatable etch-infiltrate-peel cycle. Vertically aligned silicon nanowires etched from recycled silicon wafers are captured in a polymer matrix that operates as Li+ gel-electrolyte and electrode separator and peeled off to make multiple battery devices out of a single wafer. Porous, electrically interconnected copper nanoshells are conformally deposited around the silicon nanowires to stabilize the electrodes over extended cycles and provide efficient current collection. Using the above developed process we demonstrate an operational full cell 3.4 V lithium-polymer silicon nanowire (LIPOSIL) battery which is mechanically flexible and scalable to large dimensions. PMID:22949696

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Schmid, F.; Khattak, C. P.

1977-01-01

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Low loss poly-silicon for high performance capacitive silicon modulators.

PubMed

Douix, Maurin; Baudot, Charles; Marris-Morini, Delphine; Valéry, Alexia; Fowler, Daivid; Acosta-Alba, Pablo; Kerdilès, Sébastien; Euvrard, Catherine; Blanc, Romuald; Beneyton, Rémi; Souhaité, Aurélie; Crémer, Sébastien; Vulliet, Nathalie; Vivien, Laurent; Boeuf, Frédéric

2018-03-05

Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: 300 nm thick amorphous silicon layers are deposited on thermal oxide, followed by solid phase crystallization anneal. Rib waveguides are fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM and SIMS) are used to assess the origin of losses. Optimal deposition and annealing conditions have been defined, resulting in 400 nm-wide rib waveguides with only 9.2-10 dB/cm losses.

Active phase correction of high resolution silicon photonic arrayed waveguide gratings

DOE PAGES

Gehl, M.; Trotter, D.; Starbuck, A.; ...

2017-03-10

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Thus, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. We present the design and fabrication of compact siliconmore » photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm 2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. In addition, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.« less

Electrochemically deposited cobalt/platinum (Co/Pt) film into porous silicon: Structural investigation and magnetic properties

NASA Astrophysics Data System (ADS)

Harraz, F. A.; Salem, A. M.; Mohamed, B. A.; Kandil, A.; Ibrahim, I. A.

2013-01-01

A nanostructured CoPt magnetic film was deposited from a single electrolyte into porous silicon layer by an electrochemical technique, followed by annealing at 600 °C in Ar atmosphere during which the CoPt alloy was converted to L10 ordered phase. Porous silicon with pore diameter between 5 and 100 nm was firstly fabricated by galvanostatic anodization of n-type silicon wafer in the presence of CrO3 as oxidizing agent and ethanol or sodium lauryl sulfate as surfactants. The role of the surfactant on the produced pore size and morphology was investigated by means of UV-vis spectra. As-formed porous silicon was consequently used as a template for the electrodeposition of magnetic CoPt film. The phase formation, microstructure and the magnetic properties were fully analyzed by XRD, FE-SEM, EDS and VSM measurements. It was found that, upon annealing the coercivity was significantly increased due to the transformation to the L10 ordered structure. The saturation magnetization and remanence ratio were also found to increase, indicating no loss of Co content or oxidation reaction after the annealing. Results of synthesis and characterization of CoPt/porous silicon nanocomposite are addressed and thoroughly discussed.

Phase diagram and electrical behavior of silicon-rich iridium silicide compounds

NASA Technical Reports Server (NTRS)

Allevato, C. E.; Vining, Cronin B.

1992-01-01

The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi sub about 3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi sub about 3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83 +/- 1 atomic percent silicon was observed between IrSi sub about 3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi sub about 3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 x 10 exp -6 ohms-m.

Silicon and Manganese Partition Between Slag and Metal Phases and Their Activities Pertinent to Ferromanganese and Silicomanganese Production

NASA Astrophysics Data System (ADS)

Cengizler, Hakan; Eric, R. Hurman

Equilibrium between MnO-CaO-MgO-SiO2-Al2O3 slags and carbon saturated Mn-Si-Fe-C alloys was investigated under CO at 1500oC. Manganese and silicon activities were obtained by using the present data and the previously determined MnO and SiO2 activities of the slag. Quadratic multi-coefficient regression equations were developed for activity coefficients of manganese and silicon. The conclusions of this work are:(i)increase in the basicity and the CaO/Al2O3 ratios decreases the Mn distribution ratio,(ii)increase in the silica concentration and the MgO/CaO ratio increases the Mn distribution ratio, iii)carbon and manganese as well as carbon and silicon of the metal phase are inversely proportional,(iv)as Mn/Fe and Mn/Si ratio increases in the metal the carbon solubility increases,(v)decrease in the basicity increases the silicon content of the metal and (vi)increase in the silica content of the slag increases the silicon content of the metal and this effect is more pronounced at the higher Mn/Fe and Mn/Si ratios.

Silicon-photonic interferometric biosensor using active phase demodulation

NASA Astrophysics Data System (ADS)

Marin, Y.; Toccafondo, V.; Velha, P.; Scarano, S.; Tirelli, S.; Nottola, A.; Jeong, Y.; Jeon, H. P.; Minunni, M.; Di Pasquale, F.; Oton, C. J.

2018-02-01

Silicon photonics is becoming a consolidated technology, mainly in the telecom/datacom sector, but with a great potential in the chemical and biomedical sensor market too, mainly due to its CMOS compatibility, which allows massfabrication of huge numbers of miniaturized devices at a very low cost per chip. Integrated photonic sensors, typically based on resonators, interferometers, or periodic structures, are easy to multiplex as the light is confined in optical waveguides. In this work, we present a silicon-photonic sensor capable of measuring refractive index and chemical binding of biomolecules on the surface, using a low-cost phase interrogation scheme. The sensor consists of a pair of balanced Mach-Zehnder interferometers with interaction lengths of 2.5 mm and 22 mm, wound to a sensing area of only 500 μm x500 μm. The phase interrogation is performed with a fixed laser and an active phase demodulation approach based on a phase generated carrier (PGC) technique using a phase demodulator integrated within the chip. No laser tuning is required, and the technique can extract the univocal phase value with no sensitivity fading. The detection only requires a photo-receiver per interferometer, analog-to-digital conversion, and simple processing performed in real-time. We present repeatable and linear refractive index measurements, with a detection limit down to 4.7·10-7 RIU. We also present sensing results on a chemically-functionalized sample, where anti-BSA to BSA (bovine serum albumin) binding curves are clearly visible for concentrations down to 5 ppm. Considering the advantages of silicon photonics, this device has great potential over several applications in the chemical/biochemical sensing industry.

Analog optical computing primitives in silicon photonics

DOE PAGES

Jiang, Yunshan; DeVore, Peter T. S.; Jalali, Bahram

2016-03-15

Optical computing accelerators help alleviate bandwidth and power consumption bottlenecks in electronics. In this paper, we show an approach to implementing logarithmic-type analog co-processors in silicon photonics and use it to perform the exponentiation operation and the recovery of a signal in the presence of multiplicative distortion. Finally, the function is realized by exploiting nonlinear-absorption-enhanced Raman amplification saturation in a silicon waveguide.

JAGUAR Procedures for Detonation Behavior of Silicon Containing Explosives

NASA Astrophysics Data System (ADS)

Stiel, Leonard; Baker, Ernest; Capellos, Christos; Poulos, William; Pincay, Jack

2007-06-01

Improved relationships for the thermodynamic properties of solid and liquid silicon and silicon oxide for use with JAGUAR thermo-chemical equation of state routines were developed in this study. Analyses of experimental melting temperature curves for silicon and silicon oxide indicated complex phase behavior and that improved coefficients were required for solid and liquid thermodynamic properties. Advanced optimization routines were utilized in conjunction with the experimental melting point data to establish volumetric coefficients for these substances. The new property libraries resulted in agreement with available experimental values, including Hugoniot data at elevated pressures. Detonation properties were calculated with JAGUAR using the revised property libraries for silicon containing explosives. Constants of the JWLB equation of state were established for varying extent of silicon reaction. Supporting thermal heat transfer analyses were conducted for varying silicon particle sizes to establish characteristic times for melting and silicon reaction.

Experimental Bayesian Quantum Phase Estimation on a Silicon Photonic Chip.

PubMed

Paesani, S; Gentile, A A; Santagati, R; Wang, J; Wiebe, N; Tew, D P; O'Brien, J L; Thompson, M G

2017-03-10

Quantum phase estimation is a fundamental subroutine in many quantum algorithms, including Shor's factorization algorithm and quantum simulation. However, so far results have cast doubt on its practicability for near-term, nonfault tolerant, quantum devices. Here we report experimental results demonstrating that this intuition need not be true. We implement a recently proposed adaptive Bayesian approach to quantum phase estimation and use it to simulate molecular energies on a silicon quantum photonic device. The approach is verified to be well suited for prethreshold quantum processors by investigating its superior robustness to noise and decoherence compared to the iterative phase estimation algorithm. This shows a promising route to unlock the power of quantum phase estimation much sooner than previously believed.

Advanced process control and novel test methods for PVD silicon and elastomeric silicone coatings utilized on ion implant disks, heatsinks and selected platens

DOE Office of Scientific and Technical Information (OSTI.GOV)

Springer, J.; Allen, B.; Wriggins, W.

Coatings play multiple key roles in the proper functioning of mature and current ion implanters. Batch and serial implanters require strategic control of elemental and particulate contamination which often includes scrutiny of the silicon surface coatings encountering direct beam contact. Elastomeric Silicone Coatings must accommodate wafer loading and unloading as well as direct backside contact during implant plus must maintain rigid elemental and particulate specifications. The semiconductor industry has had a significant and continuous effort to obtain ultra-pure silicon coatings with sustained process performance and long life. Low particles and reduced elemental levels for silicon coatings are a major requirementmore » for process engineers, OEM manufacturers, and second source suppliers. Relevant data will be presented. Some emphasis and detail will be placed on the structure and characteristics of a relatively new PVD Silicon Coating process that is very dense and homogeneous. Wear rate under typical ion beam test conditions will be discussed. The PVD Silicon Coating that will be presented here is used on disk shields, wafer handling fingers/fences, exclusion zones of heat sinks, beam dumps and other beamline components. Older, legacy implanters can now provide extended process capability using this new generation PVD silicon - even on implanter systems that were shipped long before the advent of silicon coating for contamination control. Low particles and reduced elemental levels are critical performance criteria for the silicone elastomers used on disk heatsinks and serial implanter platens. Novel evaluation techniques and custom engineered tools are used to investigate the surface interaction characteristics of multiple Elastomeric Silicone Coatings currently in use by the industry - specifically, friction and perpendicular stiction. These parameters are presented as methods to investigate the critical wafer load and unload function. Unique tools and test methods have been developed that deliver accurate and repeatable data, which will be described.« less

Advanced process control and novel test methods for PVD silicon and elastomeric silicone coatings utilized on ion implant disks, heatsinks and selected platens

NASA Astrophysics Data System (ADS)

Springer, J.; Allen, B.; Wriggins, W.; Kuzbyt, R.; Sinclair, R.

2012-11-01

Coatings play multiple key roles in the proper functioning of mature and current ion implanters. Batch and serial implanters require strategic control of elemental and particulate contamination which often includes scrutiny of the silicon surface coatings encountering direct beam contact. Elastomeric Silicone Coatings must accommodate wafer loading and unloading as well as direct backside contact during implant plus must maintain rigid elemental and particulate specifications. The semiconductor industry has had a significant and continuous effort to obtain ultra-pure silicon coatings with sustained process performance and long life. Low particles and reduced elemental levels for silicon coatings are a major requirement for process engineers, OEM manufacturers, and second source suppliers. Relevant data will be presented. Some emphasis and detail will be placed on the structure and characteristics of a relatively new PVD Silicon Coating process that is very dense and homogeneous. Wear rate under typical ion beam test conditions will be discussed. The PVD Silicon Coating that will be presented here is used on disk shields, wafer handling fingers/fences, exclusion zones of heat sinks, beam dumps and other beamline components. Older, legacy implanters can now provide extended process capability using this new generation PVD silicon - even on implanter systems that were shipped long before the advent of silicon coating for contamination control. Low particles and reduced elemental levels are critical performance criteria for the silicone elastomers used on disk heatsinks and serial implanter platens. Novel evaluation techniques and custom engineered tools are used to investigate the surface interaction characteristics of multiple Elastomeric Silicone Coatings currently in use by the industry - specifically, friction and perpendicular stiction. These parameters are presented as methods to investigate the critical wafer load and unload function. Unique tools and test methods have been developed that deliver accurate and repeatable data, which will be described.

Radiation Hard Silicon Particle Detectors for Phase-II LHC Trackers

NASA Astrophysics Data System (ADS)

Oblakowska-Mucha, A.

2017-02-01

The major LHC upgrade is planned after ten years of accelerator operation. It is foreseen to significantly increase the luminosity of the current machine up to 1035 cm-2s-1 and operate as the upcoming High Luminosity LHC (HL-LHC) . The major detectors upgrade, called the Phase-II Upgrade, is also planned, a main reason being the aging processes caused by severe particle radiation. Within the RD50 Collaboration, a large Research and Development program has been underway to develop silicon sensors with sufficient radiation tolerance for HL-LHC trackers. In this summary, several results obtained during the testing of the devices after irradiation to HL-LHC levels are presented. Among the studied structures, one can find advanced sensors types like 3D silicon detectors, High-Voltage CMOS technologies, or sensors with intrinsic gain (LGAD). Based on these results, the RD50 Collaboration gives recommendation for the silicon detectors to be used in the detector upgrade.

Stereochemistry of silicon in oxygen-containing compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serezhkin, V. N., E-mail: Serezhkin@samsu.ru; Urusov, V. S.

2017-01-15

Specific stereochemical features of silicon in oxygen-containing compounds, including hybrid silicates with all oxygen atoms of SiO{sub n} groups ({sub n} = 4, 5, or 6) entering into the composition of organic anions or molecules, are described by characteristics of Voronoi—Dirichlet polyhedra. It is found that in rutile-like stishovite and post-stishovite phases with the structures similar to those of СаСl{sub 2}, α-PbO{sub 2}, or pyrite FeS{sub 2}, the volume of Voronoi—Dirichlet polyhedra of silicon and oxygen atoms decreases linearly with pressure increasing to 268 GPa. Based on these results, the possibility of formation of new post-stishovite phases is shown, namely,more » the fluorite-like structure (transition predicted at ~400 GPa) and a body-centered cubic lattice with statistical arrangement of silicon and oxygen atoms (~900 GPa).« less

Flow restrictor silicon membrane microvalve actuated by optically controlled paraffin phase transition

NASA Astrophysics Data System (ADS)

Kolari, K.; Havia, T.; Stuns, I.; Hjort, K.

2014-08-01

Restrictor valves allow proportional control of fluid flow but are rarely integrated in microfluidic systems. In this study, an optically actuated silicon membrane restrictor microvalve is demonstrated. Its actuation is based on the phase transition of paraffin, using a paraffin wax mixed with a suitable concentration of optically absorbing nanographite particles. Backing up the membrane with oil (the melted paraffin) allows for a compliant yet strong contact to the valve seat, which enables handling of high pressures. At flow rates up to 30 µL min-1 and at a pressure of 2 bars, the valve can successfully be closed and control the flow level by restriction. The use of this paraffin composite as an adhesive layer sandwiched between the silicon valve and glass eases fabrication. This type of restrictor valve is best suited for high pressure, low volume flow silicon-based nanofluidic systems.

Development of a polysilicon process based on chemical vapor deposition, phase 1 and phase 2

NASA Technical Reports Server (NTRS)

Plahutnik, F.; Arvidson, A.; Sawyer, D.; Sharp, K.

1982-01-01

High-purity polycrystalline silicon was produced in an experimental, intermediate and advanced CVD reactor. Data from the intermediate and advanced reactors confirmed earlier results obtained in the experimental reactor. Solar cells were fabricated by Westinghouse Electric and Applied Solar Research Corporation which met or exceeded baseline cell efficiencies. Feedstocks containing trichlorosilane or silicon tetrachloride are not viable as etch promoters to reduce silicon deposition on bell jars. Neither are they capable of meeting program goals for the 1000 MT/yr plant. Post-run CH1 etch was found to be a reasonably effective method of reducing silicon deposition on bell jars. Using dichlorosilane as feedstock met the low-cost solar array deposition goal (2.0 gh-1-cm-1), however, conversion efficiency was approximately 10% lower than the targeted value of 40 mole percent (32 to 36% achieved), and power consumption was approximately 20 kWh/kg over target at the reactor.

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

NASA Technical Reports Server (NTRS)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

Addressing the amorphous content issue in quantitative phase analysis: the certification of NIST standard reference material 676a.

PubMed

Cline, James P; Von Dreele, Robert B; Winburn, Ryan; Stephens, Peter W; Filliben, James J

2011-07-01

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum (α-Al(2)O(3)) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Under the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% ± 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.

Lithium concentration dependent structure and mechanics of amorphous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sitinamaluwa, H. S.; Wang, M. C.; Will, G.

2016-06-28

A better understanding of lithium-silicon alloying mechanisms and associated mechanical behavior is essential for the design of Si-based electrodes for Li-ion batteries. Unfortunately, the relationship between the dynamic mechanical response and microstructure evolution during lithiation and delithiation has not been well understood. We use molecular dynamic simulations to investigate lithiated amorphous silicon with a focus to the evolution of its microstructure, phase composition, and stress generation. The results show that the formation of Li{sub x}Si alloy phase is via different mechanisms, depending on Li concentration. In these alloy phases, the increase in Li concentration results in reduction of modulus ofmore » elasticity and fracture strength but increase in ductility in tension. For a Li{sub x}Si system with uniform Li distribution, volume change induced stress is well below the fracture strength in tension.« less

Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2013-04-08

An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-μm-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-κ dielectric as the insulator, respectively.

Diffusion Bonding of Silicon Carbide for MEMS-LDI Applications

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, J. Douglas

2007-01-01

A robust joining approach is critically needed for a Micro-Electro-Mechanical Systems-Lean Direct Injector (MEMS-LDI) application which requires leak free joints with high temperature mechanical capability. Diffusion bonding is well suited for the MEMS-LDI application. Diffusion bonds were fabricated using titanium interlayers between silicon carbide substrates during hot pressing. The interlayers consisted of either alloyed titanium foil or physically vapor deposited (PVD) titanium coatings. Microscopy shows that well adhered, crack free diffusion bonds are formed under optimal conditions. Under less than optimal conditions, microcracks are present in the bond layer due to the formation of intermetallic phases. Electron microprobe analysis was used to identify the reaction formed phases in the diffusion bond. Various compatibility issues among the phases in the interlayer and substrate are discussed. Also, the effects of temperature, pressure, time, silicon carbide substrate type, and type of titanium interlayer and thickness on the microstructure and composition of joints are discussed.

Laser printing of silicon nanoparticles with resonant optical electric and magnetic responses.

PubMed

Zywietz, Urs; Evlyukhin, Andrey B; Reinhardt, Carsten; Chichkov, Boris N

2014-03-04

Silicon nanoparticles with sizes of a few hundred nanometres exhibit unique optical properties due to their strong electric and magnetic dipole responses in the visible range. Here we demonstrate a novel laser printing technique for the controlled fabrication and precise deposition of silicon nanoparticles. Using femtosecond laser pulses it is possible to vary the size of Si nanoparticles and their crystallographic phase. Si nanoparticles produced by femtosecond laser printing are initially in an amorphous phase (a-Si). They can be converted into the crystalline phase (c-Si) by irradiating them with a second femtosecond laser pulse. The resonance-scattering spectrum of c-Si nanoparticles, compared with that of a-Si nanoparticles, is blue shifted and its peak intensity is about three times higher. Resonant optical responses of dielectric nanoparticles are characterized by accumulation of electromagnetic energy in the excited modes, which can be used for the realization of nanoantennas, nanolasers and metamaterials.

Recording large-scale neuronal ensembles with silicon probes in the anesthetized rat.

PubMed

Schjetnan, Andrea Gomez Palacio; Luczak, Artur

2011-10-19

Large scale electrophysiological recordings from neuronal ensembles offer the opportunity to investigate how the brain orchestrates the wide variety of behaviors from the spiking activity of its neurons. One of the most effective methods to monitor spiking activity from a large number of neurons in multiple local neuronal circuits simultaneously is by using silicon electrode arrays. Action potentials produce large transmembrane voltage changes in the vicinity of cell somata. These output signals can be measured by placing a conductor in close proximity of a neuron. If there are many active (spiking) neurons in the vicinity of the tip, the electrode records combined signal from all of them, where contribution of a single neuron is weighted by its 'electrical distance'. Silicon probes are ideal recording electrodes to monitor multiple neurons because of a large number of recording sites (+64) and a small volume. Furthermore, multiple sites can be arranged over a distance of millimeters, thus allowing for the simultaneous recordings of neuronal activity in the various cortical layers or in multiple cortical columns (Fig. 1). Importantly, the geometrically precise distribution of the recording sites also allows for the determination of the spatial relationship of the isolated single neurons. Here, we describe an acute, large-scale neuronal recording from the left and right forelimb somatosensory cortex simultaneously in an anesthetized rat with silicon probes (Fig. 2).

Recording Large-scale Neuronal Ensembles with Silicon Probes in the Anesthetized Rat

PubMed Central

Schjetnan, Andrea Gomez Palacio; Luczak, Artur

2011-01-01

Large scale electrophysiological recordings from neuronal ensembles offer the opportunity to investigate how the brain orchestrates the wide variety of behaviors from the spiking activity of its neurons. One of the most effective methods to monitor spiking activity from a large number of neurons in multiple local neuronal circuits simultaneously is by using silicon electrode arrays1-3. Action potentials produce large transmembrane voltage changes in the vicinity of cell somata. These output signals can be measured by placing a conductor in close proximity of a neuron. If there are many active (spiking) neurons in the vicinity of the tip, the electrode records combined signal from all of them, where contribution of a single neuron is weighted by its 'electrical distance'. Silicon probes are ideal recording electrodes to monitor multiple neurons because of a large number of recording sites (+64) and a small volume. Furthermore, multiple sites can be arranged over a distance of millimeters, thus allowing for the simultaneous recordings of neuronal activity in the various cortical layers or in multiple cortical columns (Fig. 1). Importantly, the geometrically precise distribution of the recording sites also allows for the determination of the spatial relationship of the isolated single neurons4. Here, we describe an acute, large-scale neuronal recording from the left and right forelimb somatosensory cortex simultaneously in an anesthetized rat with silicon probes (Fig. 2). PMID:22042361

Integration of silicon-based neural probes and micro-drive arrays for chronic recording of large populations of neurons in behaving animals

NASA Astrophysics Data System (ADS)

Michon, Frédéric; Aarts, Arno; Holzhammer, Tobias; Ruther, Patrick; Borghs, Gustaaf; McNaughton, Bruce; Kloosterman, Fabian

2016-08-01

Objective. Understanding how neuronal assemblies underlie cognitive function is a fundamental question in system neuroscience. It poses the technical challenge to monitor the activity of populations of neurons, potentially widely separated, in relation to behaviour. In this paper, we present a new system which aims at simultaneously recording from a large population of neurons from multiple separated brain regions in freely behaving animals. Approach. The concept of the new device is to combine the benefits of two existing electrophysiological techniques, i.e. the flexibility and modularity of micro-drive arrays and the high sampling ability of electrode-dense silicon probes. Main results. Newly engineered long bendable silicon probes were integrated into a micro-drive array. The resulting device can carry up to 16 independently movable silicon probes, each carrying 16 recording sites. Populations of neurons were recorded simultaneously in multiple cortical and/or hippocampal sites in two freely behaving implanted rats. Significance. Current approaches to monitor neuronal activity either allow to flexibly record from multiple widely separated brain regions (micro-drive arrays) but with a limited sampling density or to provide denser sampling at the expense of a flexible placement in multiple brain regions (neural probes). By combining these two approaches and their benefits, we present an alternative solution for flexible and simultaneous recordings from widely distributed populations of neurons in freely behaving rats.

Surface and Interface Chemistry for Gate Stacks on Silicon

NASA Astrophysics Data System (ADS)

Frank, M. M.; Chabal, Y. J.

This chapter addresses the fundamental silicon surface science associated with the continued progress of nanoelectronics along the path prescribed by Moore's law. Focus is on hydrogen passivation layers and on ultrathin oxide films encountered during silicon cleaning and gate stack formation in the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs). Three main topics are addressed. (i) First, the current practices and understanding of silicon cleaning in aqueous solutions are reviewed, including oxidizing chemistries and cleans leading to a hydrogen passivation layer. The dependence of the final surface termination and morphology/roughness on reactant choice and pH and the influence of impurities such as dissolved oxygen or metal ions are discussed. (ii) Next, the stability of hydrogen-terminated silicon in oxidizing liquid and gas phase environments is considered. In particular, the remarkable stability of hydrogen-terminated silicon surface in pure water vapor is discussed in the context of atomic layer deposition (ALD) of high-permittivity (high-k) gate dielectrics where water is often used as an oxygen precursor. Evidence is also provided for co-operative action between oxygen and water vapor that accelerates surface oxidation in humid air. (iii) Finally, the fabrication of hafnium-, zirconium- and aluminum-based high-k gate stacks is described, focusing on the continued importance of the silicon/silicon oxide interface. This includes a review of silicon surface preparation by wet or gas phase processing and its impact on high-k nucleation during ALD growth, and the consideration of gate stack capacitance and carrier mobility. In conclusion, two issues are highlighted: the impact of oxygen vacancies on the electrical characteristics of high-k MOS devices, and the way alloyed metal ions (such as Al in Hf-based gate stacks) in contact with the interfacial silicon oxide layer can be used to control flatband and threshold voltages.

Equation of state and phase diagram of Fe-16Si alloy as a candidate component of Earth's core

NASA Astrophysics Data System (ADS)

Fischer, Rebecca A.; Campbell, Andrew J.; Caracas, Razvan; Reaman, Daniel M.; Dera, Przymyslaw; Prakapenka, Vitali B.

2012-12-01

The outer core of the Earth contains several weight percent of one or more unknown light elements, which may include silicon. Therefore it is critical to understand the high pressure-temperature properties and behavior of an iron-silicon alloy with a geophysically relevant composition (16 wt% silicon). We experimentally determined the melting curve, subsolidus phase diagram, and equations of state of all phases of Fe-16 wt%Si to 140 GPa, finding a conversion from the D03 crystal structure to a B2+hcp mixture at high pressures. The melting curve implies that 3520 K is a minimum temperature for the Earth's outer core, if it consists solely of Fe-Si alloy, and that the eutectic composition in the Fe-Si system is less than 16 wt% silicon at core-mantle boundary conditions. Comparing our new equation of state to that of iron and the density of the core, we find that for an Fe-Ni-Si outer core, 11.3±1.5 wt% silicon would be required to match the core's observed density at the core-mantle boundary. We have also performed first-principles calculations of the equations of state of Fe3Si with the D03 structure, hcp iron, and FeSi with the B2 structure using density-functional theory.

Equation of state and phase diagram of Fe-16Si alloy as a candidate component of Earth's core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fischer, Rebecca A; Campbell, Andrew J; Caracas, Razvan

2016-07-29

The outer core of the Earth contains several weight percent of one or more unknown light elements, which may include silicon. Therefore it is critical to understand the high pressure–temperature properties and behavior of an iron–silicon alloy with a geophysically relevant composition (16 wt% silicon). We experimentally determined the melting curve, subsolidus phase diagram, and equations of state of all phases of Fe–16 wt%Si to 140 GPa, finding a conversion from the D0 3 crystal structure to a B2+hcp mixture at high pressures. The melting curve implies that 3520 K is a minimum temperature for the Earth's outer core, ifmore » it consists solely of Fe–Si alloy, and that the eutectic composition in the Fe–Si system is less than 16 wt% silicon at core–mantle boundary conditions. Comparing our new equation of state to that of iron and the density of the core, we find that for an Fe–Ni–Si outer core, 11.3±1.5 wt% silicon would be required to match the core's observed density at the core–mantle boundary. We have also performed first-principles calculations of the equations of state of Fe 3Si with the D0 3 structure, hcp iron, and FeSi with the B2 structure using density-functional theory.« less

Frequency-degenerate phase-sensitive optical parametric amplification based on four-wave mixing in graphene–silicon slot waveguide

NASA Astrophysics Data System (ADS)

Li, Zhen; Liu, Hongjun; Huang, Nan; Wang, Zhaolu; Han, Jing

2018-06-01

The phase-sensitive amplification process of a hybrid graphene–silicon (HyGS) slot waveguide with trilayers of graphene is investigated in this paper. Numerical simulation shows that a relatively high extinction ratio (42 dB) is achieved, because of the ultrahigh nonlinear coefficients, with a waveguide length of only 680 µm. In addition, the graphene layer provides the possibility of modulating the phase status and gain of the output signal. This study is expected to be highly beneficial to applications such as integrated optics and graphene-related active optical devices.

Hybrid III/V silicon photonic source with integrated 1D free-space beam steering.

PubMed

Doylend, J K; Heck, M J R; Bovington, J T; Peters, J D; Davenport, M L; Coldren, L A; Bowers, J E

2012-10-15

A chip-scale optical source with integrated beam steering is demonstrated. The chip was fabricated using the hybrid silicon platform and incorporates an on-chip laser, waveguide splitter, amplifiers, phase modulators, and surface gratings to comprise an optical phased array with beam steering across a 12° field of view in one axis. Tuning of the phased array is used to achieve 1.8°(steered axis)×0.6°(nonsteered axis) beam width with 7 dB background suppression for arbitrary beam direction within the field of view.

Real-space study of the optical absorption in alternative phases of silicon

NASA Astrophysics Data System (ADS)

Ong, Chin Shen; Coh, Sinisa; Cohen, Marvin L.; Louie, Steven G.

2017-12-01

We introduce a real-space approach to understand the relationship between optical absorption and crystal structure. We apply this approach to alternative phases of silicon, with a focus on the Si20 crystal phase as a case study. We find that about 83% of the changes in the calculated low-energy absorption in Si20 as compared to Si in the diamond structure can be attributed to reducing the differences between the on-site energies of the bonding and antibonding orbitals as well as increasing the hopping integrals for specific Si-Si bonds.

Characterization of some selected vulcanized and raw silicon rubber materials

NASA Astrophysics Data System (ADS)

Sasikala, A.; Kala, A.

2017-06-01

Silicone Rubber is a high need of importance of Medical devices, Implants, Aviation and Aerospace wiring applications. Silicone rubbers are widely used in industry, and there are in multiple formulations. A raw and vulcanized silicone rubber Chemical and Physical structures of particles was confirmed and mechanical strength has been analyzed by FTIR spectroscopy. Thermal properties studied from Thermo Gravimetric Analysis (TGA) and Differential Scanning Calorimetry (DSC) analysis. Activation energy of the rubber materials were calculated using Broido method, Piloyon-Novikova relation and coats-Red fern methods.

Laser desorption ionization and peptide sequencing on laser induced silicon microcolumn arrays

DOEpatents

Vertes, Akos [Reston, VA; Chen, Yong [San Diego, CA

2011-12-27

The present invention provides a method of producing a laser-patterned silicon surface, especially silicon wafers for use in laser desorption ionization (LDI-MS) (including MALDI-MS and SELDI-MS), devices containing the same, and methods of testing samples employing the same. The surface is prepared by subjecting a silicon substrate to multiple laser shots from a high-power picosecond or femtosecond laser while in a processing environment, e.g., underwater, and generates a remarkable homogenous microcolumn array capable of providing an improved substrate for LDI-MS.

Silicon nanowire synthesis by a vapor-liquid-solid approach.

PubMed

Mao, Aaron; Ng, H T; Nguyen, Pho; McNeil, Melanie; Meyyappan, M

2005-05-01

Synthesis of silicon nanowires is studied by using a vapor-liquid-solid growth technique. Silicon tetrachloride reduction with hydrogen in the gas phase is used with gold serving as catalyst to facilitate growth. Only a narrow set of conditions of SiCl4 concentration and temperature yield straight nanowires. High concentrations and temperatures generally result in particulates, catalyst coverage and deactivation, and coatinglike materials.

Silicon nanowire synthesis by a vapor-liquid-solid approach

NASA Technical Reports Server (NTRS)

Mao, Aaron; Ng, H. T.; Nguyen, Pho; McNeil, Melanie; Meyyappan, M.

2005-01-01

Synthesis of silicon nanowires is studied by using a vapor-liquid-solid growth technique. Silicon tetrachloride reduction with hydrogen in the gas phase is used with gold serving as catalyst to facilitate growth. Only a narrow set of conditions of SiCl4 concentration and temperature yield straight nanowires. High concentrations and temperatures generally result in particulates, catalyst coverage and deactivation, and coatinglike materials.

Antimicrobial activity of silica coated silicon nano-tubes (SCSNT) and silica coated silicon nano-particles (SCSNP) synthesized by gas phase condensation.

PubMed

Tank, Chiti; Raman, Sujatha; Karan, Sujoy; Gosavi, Suresh; Lalla, Niranjan P; Sathe, Vasant; Berndt, Richard; Gade, W N; Bhoraskar, S V; Mathe, Vikas L

2013-06-01

Silica-coated, silicon nanotubes (SCSNTs) and silica-coated, silicon nanoparticles (SCSNPs) have been synthesized by catalyst-free single-step gas phase condensation using the arc plasma process. Transmission electron microscopy and scanning tunneling microscopy showed that SCSNTs exhibited a wall thickness of less than 1 nm, with an average diameter of 14 nm and a length of several 100 nm. Both nano-structures had a high specific surface area. The present study has demonstrated cheaper, resistance-free and effective antibacterial activity in silica-coated silicon nano-structures, each for two Gram-positive and Gram-negative bacteria. The minimum inhibitory concentration (MIC) was estimated, using the optical densitometric technique, and by determining colony-forming units. The MIC was found to range in the order of micrograms, which is comparable to the reported MIC of metal oxides for these bacteria. SCSNTs were found to be more effective in limiting the growth of multidrug-resistant Staphylococcus aureus over SCSNPs at 10 μg/ml (IC 50 = 100 μg/ml).

FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides.

PubMed

Dissanayake, Chethiya M; Premaratne, Malin; Rukhlenko, Ivan D; Agrawal, Govind P

2010-09-27

A deep insight into the inherent anisotropic optical properties of silicon is required to improve the performance of silicon-waveguide-based photonic devices. It may also lead to novel device concepts and substantially extend the capabilities of silicon photonics in the future. In this paper, for the first time to the best of our knowledge, we present a three-dimensional finite-difference time-domain (FDTD) method for modeling optical phenomena in silicon waveguides, which takes into account fully the anisotropy of the third-order electronic and Raman susceptibilities. We show that, under certain realistic conditions that prevent generation of the longitudinal optical field inside the waveguide, this model is considerably simplified and can be represented by a computationally efficient algorithm, suitable for numerical analysis of complex polarization effects. To demonstrate the versatility of our model, we study polarization dependence for several nonlinear effects, including self-phase modulation, cross-phase modulation, and stimulated Raman scattering. Our FDTD model provides a basis for a full-blown numerical simulator that is restricted neither by the single-mode assumption nor by the slowly varying envelope approximation.

Canadian Semiconductor Technology Conference, 6th, Ottawa, Canada, Aug. 11-13, 1992, Proceedings

NASA Astrophysics Data System (ADS)

Baribeau, Jean-Marc

1992-11-01

This volume contains papers on the growth efficiency and distribution coefficient of GaInP-InP epilayers and heterostructures, X-ray photoelectron spectroscopy studies of Ge epilayers on Si(100), and mechanical properties of silicon carbide films for X-ray lithography application. Attention is also given to fine structure in Raman spectroscopy and X-ray reflectometry and its uses for the characterization of superlattices, phase formation in Fe-Si thin-film diffusion couples, process optimization for a micromachined silicon nonreverse valve, and a numerical study of heat transport in thermally isolated flow-rate microsensors. Particular consideration is given to a versatile 2D model for InGaAsP quantum-well semiconductor lasers, gallium arsenide electronics in the marketplace, and optical channel grading in p-type Si/SiGe MOSFETs. Other papers are on ultrafast electron tunneling in a reverse-biased high-efficiency quantum well laser structure, excess currents as a result of trap-assisted tunneling in double-barrier resonant tunneling diodes, and carrier lifetimes in strained InGaAsP multiple quantum-well laser structures.

Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

PubMed

Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

2011-12-01

Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

Reconfigurable Yagi-Uda antenna based on a silicon reflector with a solid-state plasma.

PubMed

Kim, Da-Jin; Park, Jang-Soon; Kim, Cheol Ho; Hur, Jae; Kim, Choong-Ki; Cho, Young-Kyun; Ko, Jun-Bong; Park, Bonghyuk; Kim, Dongho; Choi, Yang-Kyu

2017-12-08

This paper describes the fabrication and characterization of a reconfigurable Yagi-Uda antenna based on a silicon reflector with a solid-state plasma. The silicon reflector, composed of serially connected p-i-n diodes, forms a highly dense solid-state plasma by injecting electrons and holes into the intrinsic region. When this plasma silicon reflector is turned on, the front-realized gain of the antenna increases by more than 2 dBi beyond 5.3 GHz. To achieve the large gain increment, the structure of the antenna is carefully designed with the aid of semiconductor device simulation and antenna simulation. By using an aluminum nitride (AlN) substrate with high thermal conductivity, self-heating effects from the high forward current in the p-i-n diode are efficiently suppressed. By comparing the antenna simulation data and the measurement data, we estimated the conductivity of the plasma silicon reflector in the on-state to be between 10 4 and 10 5  S/m. With these figures, silicon material with its technology is an attractive tunable material for a reconfigurable antenna, which has attracted substantial interest from many areas, such as internet of things (IoT) applications, wireless network security, cognitive radio, and mobile and satellite communications as well as from multiple-input-multiple-output (MIMO) systems.

Elastomeric impression materials: a comparison of accuracy of multiple pours.

PubMed

Kumar, Dheeraj; Madihalli, Anand U; Reddy, K Rajeev Kumar; Rastogi, Namrataa; Pradeep, N T

2011-07-01

The aim of the present study is to compare the various elastomeric impression materials in terms of accuracy and dimensional stability, with respect to obtaining multiple casts from a single elastomeric impression at various times of pours. Three master dies were prepared for the impression making, two of these were made of brass containing a central hole with undercuts. The third die simulated a conventionally prepared typodont maxillary central incisor. Three elastomeric impression materials were chosen for the study. Each impression was poured at various time periods. Casts thus obtained were evaluated under a traveling microscope to evaluate various dimensional changes. Addition silicones provided dies which were shorter in height and bigger in diameter. Polyethers provided dies which were shorter in both height and diameter. Condensation silicones showed insignificant changes from the master die at the immediate pour but deteriorated rapidly after that in subsequent pours. None of the impression material showed a consistent behavior up to the fourth pour. They occasionally showed deviation from the pattern, but all these values were statistically insignificant. Polyethers showed lesser ability than both the addition silicones as well as the condensation silicones to recover from induced deformation. Addition silicones as well as the condensation silicones have better ability to recover from induced deformation when compared to polyether.

Converting a carbon preform object to a silicon carbide object

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1990-01-01

A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

Oxidation of silicon with a 5 eV O(-) beam

NASA Technical Reports Server (NTRS)

Hecht, M. H.; Orient, O. J.; Chutjian, A.; Vasquez, R. P.

1989-01-01

A silicon wafer has been oxidized at room temperature in vacuum using a pure, ground-state beam of O(-) ions. The beam was of sufficiently low energy that no displacement damage or implantation was energetically possible. The resulting SiO2 films were analyzed with X-ray photoelectron spectroscopy. A logarithmic dependence of oxide thickness on dose was observed, with an extrapolated oxidation efficiency of unity for the clean silicon surface. A distinct initial oxidation phase was observed, with an anomalously high level of silicon suboxides. In addition, the valence-band offset between the silicon and the oxide was unusually small, suggesting a large interfacial dipole.

Laboratory studies of silicon vapor deposition, phase A. [feasibility of producing thin films for photovoltaic applications

NASA Technical Reports Server (NTRS)

Frost, R. T.; Racette, G. W.; Stockhoff, E. H.

1977-01-01

A system is described capable of carrying out silicon vapor deposition experiments in the low 10 to the minus 10th power torr vacuum range. The system was assembled and tested for use in a program aimed at exploration of vacuum heteroepitaxy of silicon on several substrates of potential interest for photovoltaic applications. An experiment is described in which a silicon layer 2.5 microns thick was deposited on a pyrolytically cleaned tungsten substrate held at a temperature of 400 C. Using a resistance heated silicon source, thicker layers can be deposited in periods of hours by utilizing closer source to substrate distances.

Improving impact resistance of ceramic materials by energy absorbing surface layers

NASA Technical Reports Server (NTRS)

Kirchner, H. P.; Seretsky, J.

1974-01-01

Energy absorbing surface layers were used to improve the impact resistance of silicon nitride and silicon carbide ceramics. Low elastic modulus materials were used. In some cases, the low elastic modulus was achieved using materials that form localized microcracks as a result of thermal expansion anisotropy, thermal expansion differences between phases, or phase transformations. In other cases, semi-vitreous or vitreous materials were used. Substantial improvements in impact resistance were observed at room and elevated temperatures.

Measurement of phase difference for micromachined gyros driven by rotating aircraft.

PubMed

Zhang, Zengping; Zhang, Fuxue; Zhang, Wei

2013-08-21

This paper presents an approach for realizing a phase difference measurement of a new gyro. A silicon micromachined gyro was mounted on rotating aircraft for aircraft attitude control. Aircraft spin drives the silicon pendulum of a gyro rotating at a high speed so that it can sense the transverse angular velocity of the rotating aircraft based on the gyroscopic precession principle when the aircraft has transverse rotation. In applications of the rotating aircraft single channel control system, such as damping in the attitude stabilization loop, the gyro signal must be kept in sync with the control signal. Therefore, the phase difference between both signals needs to be measured accurately. Considering that phase difference is mainly produced by both the micromachined part and the signal conditioning circuit, a mathematical model has been established and analyzed to determine the gyro's phase frequency characteristics. On the basis of theoretical analysis, a dynamic simulation has been done for a case where the spin frequency is 15 Hz. Experimental results with the proposed measurement method applied to a silicon micromachined gyro driven by a rotating aircraft demonstrate that it is effective in practical applications. Measured curve and numerical analysis of phase frequency characteristic are in accordance, and the error between measurement and simulation is only 5.3%.

Deposition of hydrogenated silicon clusters for efficient epitaxial growth.

PubMed

Le, Ha-Linh Thi; Jardali, Fatme; Vach, Holger

2018-06-13

Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma-enhanced chemical vapor deposition have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. However, the optimal experimental conditions and the underlying growth mechanisms leading to the high-speed epitaxial growth of thin silicon films from hydrogenated silicon nanoparticles remain far from being understood. In the present work, extensive molecular dynamics simulations were performed to study the epitaxial growth of silicon thin films resulting from the deposition of plasma-born hydrogenated silicon clusters at low substrate temperatures under realistic reactor conditions. There is strong evidence that a temporary phase transition of the substrate area around the cluster impact site to the liquid state is necessary for the epitaxial growth to take place. We predict further that a non-normal incidence angle for the cluster impact significantly facilitates the epitaxial growth of thin crystalline silicon films.

Process for coating an object with silicon carbide

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1989-01-01

A process for coating a carbon or graphite object with silicon carbide by contacting it with silicon liquid and vapor over various lengths of contact time. In the process, a stream of silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a co-reactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into a reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. The precursor gas is decomposed directly to silicon in the reaction chamber. A stream of any decomposition gas and any unreacted precursor gas from said reaction chamber is removed. The object within the reaction chamber is then contacted with silicon, and recovered after it has been coated with silicon carbide.

Carbon Cryogel and Carbon Paper-Based Silicon Composite Anode Materials for Lithium-Ion Batteries

NASA Technical Reports Server (NTRS)

Woodworth, James; Baldwin, Richard; Bennett, William

2010-01-01

A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 6 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-5 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

Silicon Composite Anode Materials for Lithium Ion Batteries Based on Carbon Cryogels and Carbon Paper

NASA Technical Reports Server (NTRS)

Woodworth, James; Baldwin, Richard; Bennett, William

2010-01-01

A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nanofoams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

Carbon Cryogel Silicon Composite Anode Materials for Lithium Ion Batteries

NASA Technical Reports Server (NTRS)

Woodworth James; Baldwin, Richard; Bennett, William

2010-01-01

A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 10 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-4,9 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

Multi-pinhole SPECT Imaging with Silicon Strip Detectors

PubMed Central

Peterson, Todd E.; Shokouhi, Sepideh; Furenlid, Lars R.; Wilson, Donald W.

2010-01-01

Silicon double-sided strip detectors offer outstanding instrinsic spatial resolution with reasonable detection efficiency for iodine-125 emissions. This spatial resolution allows for multiple-pinhole imaging at low magnification, minimizing the problem of multiplexing. We have conducted imaging studies using a prototype system that utilizes a detector of 300-micrometer thickness and 50-micrometer strip pitch together with a 23-pinhole collimator. These studies include an investigation of the synthetic-collimator imaging approach, which combines multiple-pinhole projections acquired at multiple magnifications to obtain tomographic reconstructions from limited-angle data using the ML-EM algorithm. Sub-millimeter spatial resolution was obtained, demonstrating the basic validity of this approach. PMID:20953300

Pattern manipulation via on-chip phase modulation between orbital angular momentum beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Huanlu; School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LP; Strain, Michael J.

2015-08-03

An integrated approach to thermal modulation of relative phase between two optical vortices with opposite chirality has been demonstrated on a silicon-on-insulator substrate. The device consists of a silicon-integrated optical vortex emitter and a phase controlled 3 dB coupler. The relative phase between two optical vortices can be actively modulated on chip by applying a voltage on the integrated heater. The phase shift is shown to be linearly proportional to applied electrical power, and the rotation angle of the interference pattern is observed to be inversely proportional to topological charge. This scheme can be used in lab-on-chip, communications and sensing applications.more » It can be intentionally implemented with other modulation elements to achieve more complicated applications.« less

Phase relations in the Fe-FeSi system at high pressures and temperatures

NASA Astrophysics Data System (ADS)

Fischer, Rebecca A.; Campbell, Andrew J.; Reaman, Daniel M.; Miller, Noah A.; Heinz, Dion L.; Dera, Przymyslaw; Prakapenka, Vitali B.

2013-07-01

The Earth's core is comprised mostly of iron and nickel, but it also contains several weight percent of one or more unknown light elements, which may include silicon. Therefore it is important to understand the high pressure, high temperature properties and behavior of alloys in the Fe-FeSi system, such as their phase diagrams. We determined melting temperatures and subsolidus phase relations of Fe-9 wt% Si and stoichiometric FeSi using synchrotron X-ray diffraction at high pressures and temperatures, up to ~200 GPa and ~145 GPa, respectively. Combining this data with that of previous studies, we generated phase diagrams in pressure-temperature, temperature-composition, and pressure-composition space. We find the B2 crystal structure in Fe-9Si where previous studies reported the less ordered bcc structure, and a shallower slope for the hcp+B2 to fcc+B2 boundary than previously reported. In stoichiometric FeSi, we report a wide B2+B20 two-phase field, with complete conversion to the B2 structure at ~42 GPa. The minimum temperature of an Fe-Si outer core is 4380 K, based on the eutectic melting point of Fe-9Si, and silicon is shown to be less efficient at depressing the melting point of iron at core conditions than oxygen or sulfur. At the highest pressures reached, only the hcp and B2 structures are seen in the Fe-FeSi system. We predict that alloys containing more than ~4-8 wt% silicon will convert to an hcp+B2 mixture and later to the hcp structure with increasing pressure, and that an iron-silicon alloy in the Earth's inner core would most likely be a mixture of hcp and B2 phases.

Phase relations in the Fe-FeSi system at high pressures and temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fischer, Rebecca A.; Campbell, Andrew J.; Reaman, Daniel M.

2016-07-29

The Earth's core is comprised mostly of iron and nickel, but it also contains several weight percent of one or more unknown light elements, which may include silicon. Therefore it is important to understand the high pressure, high temperature properties and behavior of alloys in the Fe–FeSi system, such as their phase diagrams. We determined melting temperatures and subsolidus phase relations of Fe–9 wt% Si and stoichiometric FeSi using synchrotron X-ray diffraction at high pressures and temperatures, up to ~200 GPa and ~145 GPa, respectively. Combining this data with that of previous studies, we generated phase diagrams in pressure–temperature, temperature–composition,more » and pressure–composition space. We find the B2 crystal structure in Fe–9Si where previous studies reported the less ordered bcc structure, and a shallower slope for the hcp+B2 to fcc+B2 boundary than previously reported. In stoichiometric FeSi, we report a wide B2+B20 two-phase field, with complete conversion to the B2 structure at ~42 GPa. The minimum temperature of an Fe–Si outer core is 4380 K, based on the eutectic melting point of Fe–9Si, and silicon is shown to be less efficient at depressing the melting point of iron at core conditions than oxygen or sulfur. At the highest pressures reached, only the hcp and B2 structures are seen in the Fe–FeSi system. We predict that alloys containing more than ~4–8 wt% silicon will convert to an hcp+B2 mixture and later to the hcp structure with increasing pressure, and that an iron–silicon alloy in the Earth's inner core would most likely be a mixture of hcp and B2 phases.« less

Eigenmode multiplexing with SLM for volume holographic data storage

NASA Astrophysics Data System (ADS)

Chen, Guanghao; Miller, Bo E.; Takashima, Yuzuru

2017-08-01

The cavity supports the orthogonal reference beam families as its eigenmodes while enhancing the reference beam power. Such orthogonal eigenmodes are used as additional degree of freedom to multiplex data pages, consequently increase storage densities for volume Holographic Data Storage Systems (HDSS) when the maximum number of multiplexed data page is limited by geometrical factor. Image bearing holograms are multiplexed by orthogonal phase code multiplexing via Hermite-Gaussian eigenmodes in a Fe:LiNbO3 medium with a 532 nm laser at multiple Bragg angles by using Liquid Crystal on Silicon (LCOS) spatial light modulators (SLMs) in reference arms. Total of nine holograms are recorded with three angular and three eigenmode.

Experimental evidence of new tetragonal polymorphs of silicon formed through ultrafast laser-induced confined microexplosion

DOE PAGES

Rapp, L.; Haberl, B.; Pickard, C. J.; ...

2015-06-29

Ordinary materials can transform into novel phases with new crystal structures at extraordinary high pressure and temperature applied under both equilibrium and non-equilibrium conditions 1-6. The recently developed method of ultra-short laser-induced confined microexplosions 7-9 extends the range of possible new phases by initiating a highly non-equilibrium plasma state deep inside a bulk material 7-12. Ultra-high quenching rates can help to overcome kinetic barriers to the formation of new metastable phases, while the surrounding pristine crystal confines the affected material and preserves it for further study 10-12. Here we demonstrate that ultra-rapid pressure release from a completely disordered plasma statemore » in silicon produces several new metastable end phases quenched to ambient conditions. Their structure is determined from comparison to an ab initio random structure search which revealed six new energetically competitive potential phases, four tetragonal and two monoclinic ones. We show the presence of bt8 and st12, which have been predicted theoretically previously 13-15, but have not been observed in nature or in laboratory experiments. Additionally, the presence of the as yet unidentified silicon phase, Si-VIII and two of our other predicted tetragonal phases are highly likely within laser-affected zones. These findings pave the way for new materials with novel and exotic properties.« less

Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

NASA Astrophysics Data System (ADS)

Wienkes, Lee Raymond

Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

NASA Astrophysics Data System (ADS)

Naddaf, M.

2017-01-01

Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

El-Atwani, Osman; Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; Gonderman, Sean

We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for amore » time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution.« less

Progress and prospects of silicon-based design for optical phased array

NASA Astrophysics Data System (ADS)

Hu, Weiwei; Peng, Chao; Chang-Hasnain, Connie

2016-03-01

The high-speed, high-efficient, compact phase modulator array is indispensable in the Optical-phased array (OPA) which has been considered as a promising technology for realizing flexible and efficient beam steering. In our research, two methods are presented to utilize high-contrast grating (HCG) as high-efficient phase modulator. One is that HCG possesses high-Q resonances that origins from the cancellation of leaky waves. As a result, sharp resonance peaks appear on the reflection spectrum thus HCGs can be utilized as efficient phase shifters. Another is that low-Q mode HCG is utilized as ultra-lightweight mirror. With MEMS technology, small HCG displacement (~50 nm) leads to large phase change (~1.7π). Effective beam steering is achieved in Connie Chang-Hasnian's group. On the other hand, we theoretically and experimentally investigate the system design for silicon-based optical phased array, including the star coupler, phased array, emission elements and far-field patterns. Further, the non-uniform optical phased array is presented.

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

NASA Astrophysics Data System (ADS)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

Multiple EFG silicon ribbon technology as the basis for manufacturing low-cost terrestrial solar cells. [Epitaxial Film Growth

NASA Technical Reports Server (NTRS)

Mackintosh, B.; Kalejs, J. P.; Ho, C. T.; Wald, F. V.

1981-01-01

Mackintosh et al. (1978) have reported on the development of a multiple ribbon furnace based on the 'edge defined film fed growth' (EFG) process for the fabrication of silicon ribbon. It has been demonstrated that this technology can meet the requirements for a silicon substrate material to be used in the manufacture of solar panels which can meet requirements regarding a selling price of $0.70/Wp when certain goals in terms of throughput and quality are achieved. These goals for the multiple ribbon technology using 10 cm wide ribbon require simultaneous growth of 12 ribbons by one operator at average speeds of 4 to 4.5 cm/min, and 13% efficient solar cells. A description is presented of the progress made toward achieving these goals. It is concluded that the required performance levels have now been achieved. The separate aspects of technology must now be integrated into a single prototype furnace.

Slicing of silicon into sheet material. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Holden, S. C.; Fleming, J. R.

1978-01-01

Fabrication of a prototype large capacity multiple blade slurry saw is considered. Design of the bladehead which will tension up to 1000 blades, and cut a 45 cm long silicon ingot as large as 12 cm in diameter is given. The large blade tensioning force of 270,000 kg is applied through two bolts acting on a pair of scissor toggles, significantly reducing operator set-up time. Tests with an upside-down cutting technique resulted in 100% wafering yields and the highest wafer accuracy yet experienced with MS slicing. Variations in oil and abrasives resulted only in degraded slicing results. A technique of continuous abrasive slurry separation to remove silicon debris is described.

Addressing the amorphous content issue in quantitative phase analysis : the certification of NIST SRM 676a.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cline, J. P.; Von Dreele, R. B.; Winburn, R.

2011-07-01

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum ({alpha}-Al{sub 2}O{sub 3}) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Undermore » the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% {+-} 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.« less

Addressing the Amorphous Content Issue in Quantitative Phase Analysis: The Certification of NIST Standard Reference Material 676a

DOE Office of Scientific and Technical Information (OSTI.GOV)

J Cline; R Von Dreele; R Winburn

2011-12-31

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum ({alpha}-Al{sub 2}O{sub 3}) powder, certified with respect to phase purity for use as an internal standard in powder diffraction QPA. The amorphous content of SRM 676a is determined by comparing diffraction data from mixtures with samples of silicon powders that were engineered to vary their specific surface area. Undermore » the (supported) assumption that the thickness of an amorphous surface layer on Si was invariant, this provided a method to control the crystalline/amorphous ratio of the silicon components of 50/50 weight mixtures of SRM 676a with silicon. Powder diffraction experiments utilizing neutron time-of-flight and 25 keV and 67 keV X-ray energies quantified the crystalline phase fractions from a series of specimens. Results from Rietveld analyses, which included a model for extinction effects in the silicon, of these data were extrapolated to the limit of zero amorphous content of the Si powder. The certified phase purity of SRM 676a is 99.02% {+-} 1.11% (95% confidence interval). This novel certification method permits quantification of amorphous content for any sample of interest, by spiking with SRM 676a.« less

Aspects of rf-heating and gas-phase doping of large scale silicon crystals grown by the Float Zone technique

NASA Astrophysics Data System (ADS)

Zobel, F.; Mosel, F.; Sørensen, J.; Dold, P.

2018-05-01

Float Zone growth of silicon crystals is known as the method for providing excellent material properties. Basic principle of this technique is the radiofrequency induction heating, main aspects of this method will be discussed in this article. In contrast to other methods, one of the advantages of the Float Zone technique is the possibility for in-situ doping via gas phase. Experimental results on this topic will be shown and discussed.

Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

NASA Technical Reports Server (NTRS)

Vandersande, Jan W. (Inventor); Wood, Charles (Inventor); Draper, Susan L. (Inventor)

1989-01-01

The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

Surface property modification of silicon

NASA Technical Reports Server (NTRS)

Danyluk, S.

1984-01-01

The main emphasis of this work has been to determine the wear rate of silicon in fluid environments and the parameters that influence wear. Three tests were carried out on single crystal Czochralski silicon wafers: circular and linear multiple-scratch tests in fluids by a pyramidal diamond simulated fixed-particle abrasion; microhardness and three-point bend tests were used to determine the hardness and fracture toughness of abraded silicon and the extent of damage induced by abrasion. The wear rate of (100) and (111) n and p-type single crystal Cz silicon abraded by a pyramidal diamond in ethanol, methanol, acetone and de-ionized water was determined by measuring the cross-sectional areas of grooves of the circular and linear multiple-scratch tests. The wear rate depends on the loads on the diamond and is highest for ethanol and lowest for de-ionized water. The surface morphology of the grooves showed lateral and median cracks as well as a plastically deformed region. The hardness and fracture toughness are critical parameters that influence the wear rate. Microhardness tests were conducted to determine the hardness as influenced by fluids. Median cracks and the damage zone surrounding the indentations were also related to the fluid properties.

Lateral solid phase epitaxy of silicon and application to the fabrication of metal oxide semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Greene, Brian Joseph

Thin film silicon on insulator fabrication is an increasingly important technology requirement for improving performance in future generation devices and circuits. One process for SOI fabrication that has recently been generating renewed interest is Lateral Solid Phase Epitaxy (LSPE) of silicon over oxide. This process involves annealing amorphous silicon that has been deposited on oxide patterned Si wafers. The (001) Si substrate forms the crystalline seed for epitaxial growth, permitting the generation of Si films that are both single crystal, and oriented to the substrate. This method is particularly attractive to fabrication that requires low temperature processing, because the Si films are deposited in the amorphous phase at temperatures near 525°C, and crystallized at temperatures near 570°C. It is also attractive for applications requiring three dimensional stacking of active silicon device layers, due to the relatively low temperatures involved. For sub-50 nm gate length MOSFET fabrication, an SOI thickness on the order of 10 nm will be required. One limitation of the LSPE process has been the need for thick films (0.5--2 mum) and/or heavy P doping (10 19--1020 cm-3) to increase the maximum achievable lateral growth distance, and therefore minimize the area on the substrate occupied by seed holes. This dissertation discusses the characterization and optimization of process conditions for large area LSPE silicon film growth, as well as efforts to adapt the traditional LSPE process to achieve ultra-thin SOI layers (Tsilicon ≤ 25 nm) while avoiding the use of heavy active doping layers. MOSFETs fabricated in these films that exhibit electron mobility comparable to the Universal Si MOS Mobility are described.

Phase formation during the carbothermic reduction of eudialyte concentrate

NASA Astrophysics Data System (ADS)

Krasikov, S. A.; Upolovnikova, A. G.; Sitnikova, O. A.; Ponomarenko, A. A.; Agafonov, S. N.; Zhidovinova, S. V.; Maiorov, D. V.

2013-07-01

The phase transformations of eudialyte concentrate during the carbothermic reduction in the temperature range 25-2000°C are studied by thermodynamic simulation, differential thermal analysis, and X-ray diffraction. As the temperature increases to 1500°C, the following phases are found to form sequentially: iron and manganese carbides, free iron, niobium carbide, iron silicides, silicon and titanium carbides, and free silicon. Strontium, yttrium, and uranium in the temperature range under study are not reduced and are retained in an oxide form, and insignificant reduction of zirconium oxides with the formation of carbide ZrC is possible only at temperatures above 1500°C.

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

NASA Astrophysics Data System (ADS)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Effect of oxygen on dislocation multiplication in silicon crystals

NASA Astrophysics Data System (ADS)

Fukushima, Wataru; Harada, Hirofumi; Miyamura, Yoshiji; Imai, Masato; Nakano, Satoshi; Kakimoto, Koichi

2018-03-01

This paper aims to clarify the effect of oxygen on dislocation multiplication in silicon single crystals grown by the Czochralski and floating zone methods using numerical analysis. The analysis is based on the Alexander-Haasen-Sumino model and involves oxygen diffusion from the bulk to the dislocation cores during the annealing process in a furnace. The results show that after the annealing process, the dislocation density in silicon single crystals decreases as a function of oxygen concentration. This decrease can be explained by considering the unlocking stress caused by interstitial oxygen atoms. When the oxygen concentration is 7.5 × 1017 cm-3, the total stress is about 2 MPa and the unlocking stress is less than 1 MPa. As the oxygen concentration increases, the unlocking stress also increases; however, the dislocation velocity decreases.

Simple Heat Treatment for Production of Hot-Dip Galvanized Dual Phase Steel Using Si-Al Steels

NASA Astrophysics Data System (ADS)

Equihua-Guillén, F.; García-Lara, A. M.; Muñíz-Valdes, C. R.; Ortíz-Cuellar, J. C.; Camporredondo-Saucedo, J. E.

2014-01-01

This work presents relevant metallurgical considerations to produce galvanized dual phase steels from low cost aluminum-silicon steels which are produced by continuous strip processing. Two steels with different contents of Si and Al were austenized in the two-phase field ferrite + austenite (α + γ) in a fast manner to obtain dual phase steels, suitable for hot-dip galvanizing process, under typical parameters of continuous annealing processing line. Tensile dual phase properties were obtained from specimens cooled from temperature below Ar3, held during 3 min, intermediate cooling at temperature above Ar1 and quenching in Zn bath at 465 °C. The results have shown typical microstructure and tensile properties of galvanized dual phase steels. Finally, the synergistic effect of aluminum, silicon, and residual chromium on martensite start temperature ( M s), critical cooling rate ( C R), volume fraction of martensite, and tensile properties has been studied.

Hybrid Silicon Photonic Integration using Quantum Well Intermixing

NASA Astrophysics Data System (ADS)

Jain, Siddharth R.

With the push for faster data transfer across all domains of telecommunication, optical interconnects are transitioning into shorter range applications such as in data centers and personal computing. Silicon photonics, with its economic advantages of leveraging well-established silicon manufacturing facilities, is considered the most promising approach to further scale down the cost and size of optical interconnects for chip-to-chip communication. Intrinsic properties of silicon however limit its ability to generate and modulate light, both of which are key to realizing on-chip optical data transfer. The hybrid silicon approach directly addresses this problem by using molecularly bonded III-V epitaxial layers on silicon for optical gain and absorption. This technology includes direct transfer of III-V wafer to a pre-patterned silicon-on-insulator wafer. Several discrete devices for light generation, modulation, amplification and detection have already been demonstrated on this platform. As in the case of electronics, multiple photonic elements can be integrated on a single chip to improve performance and functionality. However, scalable photonic integration requires the ability to control the bandgap for individual devices along with design changes to simplify fabrication. In the research presented here, quantum well intermixing is used as a technique to define multiple bandgaps for integration on the hybrid silicon platform. Implantation enhanced disordering is used to generate four bandgaps spread over 120+ nm. By combining these selectively intermixed III-V layers with pre-defined gratings and waveguides on silicon, we fabricate distributed feedback, distributed Bragg reflector, Fabry-Perot and mode-locked lasers along with photodetectors, electro-absorption modulators and other test structures, all on a single chip. We demonstrate a broadband laser source with continuous-wave operational lasers over a 200 nm bandwidth. Some of these lasers are integrated with modulators with a 3-dB bandwidth above 25 GHz, thus demonstrating coarse wavelength division multiplexing transmitter on silicon.

Bit-mapped Holograms Using Phase Transition Mastering (PTM) and Blu-ray Disks

NASA Astrophysics Data System (ADS)

Barnhart, Donald

2013-02-01

Due to recent advances made in data storage, cloud computing, and Blu-ray mastering technology, it is now straight forward to calculate, store, transfer, and print bitmapped holograms that use terabytes of data and tera-pixels of information. This presentation reports on the potential of using the phase transition mastering (PTM) process to construct bitmapped, computer generated holograms with spatial resolutions of 5000 line-pairs/mm (70 nm pixel width). In particular, for Blu-ray disk production, Sony has developed a complete process that could be alternately deployed in holographic applications. The PTM process uses a 405 nm laser to write phase patterns onto a layer of imperfect transition metal oxides that is deposited onto an 8 inch silicon wafer. After the master hologram has been constructed, its imprint can then be cheaply mass produced with the same process as Blu-ray disks or embossed holograms. Unlike traditional binary holograms made with expensive e-beam lithography, the PTM process has the potential for multiple phase levels using inexpensive optics similar to consumer-grade desktop Blu-ray writers. This PTM process could revolutionise holography for entertainment, industrial, and scientific applications.

Light Weight Silicon Mirrors for Space Instrumentation

NASA Technical Reports Server (NTRS)

Bly, Vincent T.; Hill, Peter C.; Hagopian, John G.; Strojay, Carl R.; Miller, Timothy

2012-01-01

Each mirror is a monolithic structure from a single crystal of silicon. The mirrors are light weighted after the optical surface is ground and polished. Mirrors made during the initial phase of this work were typically 1/50 lambda or better (RMS at 633 n m)

Sintering silicon nitride

NASA Technical Reports Server (NTRS)

Bansal, Narottam P. (Inventor); Levine, Stanley R. (Inventor); Sanders, William A. (Inventor)

1993-01-01

Oxides having a composition of (Ba(1-x)Sr(x))O-Al2O3-2SiO2 are used as sintering aids for producing an improved silicon nitride ceramic material. The x must be greater than 0 to insure the formation of the stable monoclinic celsian glass phase.

Low cost solar aray project: Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

NASA Technical Reports Server (NTRS)

1981-01-01

This phase consists of the engineering design, fabrication, assembly, operation, economic analysis, and process support R&D for an Experimental Process System Development Unit (EPSDU). The mechanical bid package was issued and the bid responses are under evaluation. Similarly, the electrical bid package was issued, however, responses are not yet due. The majority of all equipment is on order or has been received at the EPSDU site. The pyrolysis/consolidation process design package was issued. Preparation of process and instrumentation diagram for the free-space reactor was started. In the area of melting/consolidation, Kayex successfully melted chunk silicon and have produced silicon shot. The free-space reactor powder was successfully transported pneumatically from a storage bin to the auger feeder twenty-five feet up and was melted. The fluid-bed PDU has successfully operated at silane feed concentrations up to 21%. The writing of the operating manual has started. Overall, the design phase is nearing completion.

Purification of silicon for photovoltaic applications

NASA Astrophysics Data System (ADS)

Delannoy, Yves

2012-12-01

Solar grade silicon, as a starting material for crystallization to produce solar cells, is discussed here in terms of impurities whose maximum content is estimated from recent literature and conferences. A review of the production routes for each category of solar-grade silicon (undoped, compensated or heavily compensated) is proposed with emphasis on the metallurgical route. Some recent results are proposed concerning segregation, showing that directional solidification systems can be used for solidification even at high solidification rate (15 cm/h). Results on inductive plasma purification, where boron is evacuated as HBO in a gas phase blown from an inductive plasma torch, are shown to apply as well to arc plasmas and purification by moist gas. Special attention is paid to the history of impurities in the purification processes, showing that impure auxiliary phases (silicon tetrachloride, slag, aluminum, etc.) often need their own purification process to enable their recycling, which has to be considered to evaluate the cost (financial, energetic and environmental) of the purification route.

Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures.

PubMed

Hsieh, Yu-Hsun; Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Lin, Wan-Jhen; Wu, Wen-Wei

2015-02-07

Metal silicide nanowires (NWs) are very interesting materials with diverse physical properties. Among the silicides, manganese silicide nanostructures have attracted wide attention due to their several potential applications, including in microelectronics, optoelectronics, spintronics and thermoelectric devices. In this work, we exhibited the formation of pure manganese silicide and manganese silicide/silicon nanowire heterostructures through solid state reaction with line contacts between manganese pads and silicon NWs. Dynamical process and phase characterization were investigated by in situ transmission electron microscopy (in situ TEM) and spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM), respectively. The growth dynamics of the manganese silicide phase under thermal effects were systematically studied. Additionally, Al2O3, serving as the surface oxide, altered the growth behavior of the MnSi nanowire, enhancing the silicide/Si epitaxial growth and effecting the diffusion process in the silicon nanowire as well. In addition to fundamental science, this significant study has great potential in advancing future processing techniques in nanotechnology and related applications.

Effect of heat treatment on phase composition and crystal structure of thin WSi2 films on silicon substrates

NASA Astrophysics Data System (ADS)

Biryukov, Y. P.; Dostanko, A. P.; Maltsev, A. A.; Shakhlevich, G. M.

1984-10-01

An experimental study of WSi2 films on silicon substrates with either 111 or 100 orientation was made, for the purpose of determining the effect of annealing by heat treatment on their phase composition and crystal structure. Films of 0.2 micron thickness were deposited at a rate of 0.5 nm/s on a silicon surface which was predecontaminated of SiO2 layers and adsorbate atoms by ion sputtering in one vacuum cycle. Deposition was by condensation, with the substrate held at various temperatures from 390 to 500 C, and then annealed in an argon atmosphere at various temperatures from 700 to 1000 C for 30 min. Subsequent phase analysis at room temperature was performed with a DRON-2 X-ray diffractometer, using a CuK (sub alpha)-radiation source and covering the 20 = 10 to 130 deg range of angles by the Debye-Sherer method, while the surface morphology was examined under an electron microscope.

High-Pressure γ-CaMgSi2O6: Does Penta-Coordinated Silicon Exist in the Earth's Mantle?

NASA Astrophysics Data System (ADS)

Hu, Yi; Kiefer, Boris; Bina, Craig R.; Zhang, Dongzhou; Dera, Przemeslaw K.

2017-11-01

In situ X-ray diffraction experiments with natural Fe- and Al- bearing diopside single crystals and density functional theory (DFT) calculations on diopside end-member composition indicate the existence of a new high-pressure γ-diopside polymorph with rare penta-coordinated silicon. On compression α-diopside transforms to the γ-phase at ˜50 GPa, which in turn, on decompression is observed to convert to the known β-phase below 47 GPa. The new γ-diopside polymorph constitutes another recent example of penta-coordinated silicon (VSi) in overcompressed metastable crystalline silicates, suggesting that VSi may exist in the transition zone and the uppermost lower mantle in appreciable quantities, not only in silicate glass and melts but also in crystalline phases contained in the coldest parts of subducted stagnant slabs. VSi may have significant influences on buoyancy, wave velocity anomalies, deformation mechanisms, chemical reactivity of silicate rocks, and seismicity within the slab.

Effect of High Si Content on U3Si2 Fuel Microstructure

NASA Astrophysics Data System (ADS)

Rosales, Jhonathan; van Rooyen, Isabella J.; Meher, Subhashish; Hoggan, Rita; Parga, Clemente; Harp, Jason

2018-02-01

The development of U3Si2 as an accident-tolerant nuclear fuel has gained research interest because of its promising high uranium density and improved thermal properties. In the present study, three samples of U3Si2 fuel with varying silicon content have been fabricated by a conventional powder metallurgical route. Microstructural characterization via scanning and transmission electron microscopy reveals the presence of other stoichiometry of uranium silicide such as USi and UO2 in both samples. The detailed phase analysis by x-ray diffraction shows the presence of secondary phases, such as USi, U3Si, and UO2. The samples with higher concentrations of silicon content of 7.5 wt.% display additional elemental Si. These samples also possess an increased amount of the USi phase as compared to that in the conventional sample with 7.3 wt.% silicon. The optimization of U3Si2 fuel performance through the understanding of the role of Si content on its microstructure has been discussed.

Two-dimensional beam steering using a thermo-optic silicon photonic optical phased array

NASA Astrophysics Data System (ADS)

Rabinovich, William S.; Goetz, Peter G.; Pruessner, Marcel W.; Mahon, Rita; Ferraro, Mike S.; Park, Doe; Fleet, Erin; DePrenger, Michael J.

2016-11-01

Many components for free-space optical (FSO) communication systems have shrunken in size over the last decade. However, the steering systems have remained large and power hungry. Nonmechanical beam steering offers a path to reducing the size of these systems. Optical phased arrays can allow integrated beam steering elements. One of the most important aspects of an optical phased array technology is its scalability to a large number of elements. Silicon photonics can potentially offer this scalability using CMOS foundry techniques. A phased array that can steer in two dimensions using the thermo-optic effect is demonstrated. No wavelength tuning of the input laser is needed and the design allows a simple control system with only two inputs. A benchtop FSO link with the phased array in both transmit and receive mode is demonstrated.

Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Hanes, M. H.; Davis, J. R.; Rohatgi, A.; Raichoudhury, P.; Mollenkopf, H. C.

1981-01-01

The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Cr is highly mobile in silicon even at temperatures as low as 600 C. Contrasting with earlier data for Mo, Ti, and V, Cr concentrations vary from place to place in polycrystalline silicon wafers and the electrically-active Cr concentration in the polysilicon is more than an order of magnitude smaller than would be projected from single crystal impurity data. We hypothesize that Cr diffuses during ingot cooldown after growth, preferentially segregates to grain and becomes electrically deactivated. Accelerated aging data from Ni-contaminated silicon imply that no significant impurity-induced cell performance reduction should be expected over a twenty year device lifetime.

Disseminated Pleural Siliconoma Mimicking Malignant Pleural Mesothelioma.

PubMed

Tanaka, Toshiki; Tao, Hiroyuki; Hayashi, Tatsuro; Yoshiyama, Koichi; Furukawa, Masashi; Yoshida, Kumiko; Okabe, Kazunori

2015-12-01

A 48-year-old woman with a 3-month history of back pain was admitted for further examination of multiple left pleural nodules. She had undergone bilateral breast augmentation with silicone implants 10 years previously. Nine years after the operation, both ruptured implants were removed, and autologous fat was injected. Computed tomography revealed multiple pleural nodules suggestive of malignant pleural mesothelioma. Thoracoscopic exploration revealed multiple pleural nodules with massive pleural adhesions. The nodules were filled with viscous liquid and were histologically determined to be siliconomas. Disseminated pleural siliconoma should be recognized as a late adverse event of silicone breast implantation. Copyright © 2015 The Society of Thoracic Surgeons. Published by Elsevier Inc. All rights reserved.

Silicone sheet containing all-trans retinoic acid and hydroquinone for the treatment of epidermal melanosis.

PubMed

Iida, Shoko; Takushima, Akihiko; Ohura, Norihiko; Sato, Suguru; Kurita, Masakazu; Harii, Kiyonori

2013-08-01

Although bleaching treatment using all-trans retinoic acid (RA) and hydroquinone (HQ) improves epidermal melanosis, the application of two medications and the irritant dermatitis induced by RA inconvenience patients. To overcome these problems, we developed a silicone sheet containing RA and HQ. To compare the efficacy of a silicone sheet containing RA and HQ with that of conventional bleaching treatment. Silicone sheets containing 1% RA and 5% HQ were applied at night during the bleaching phase of 4 weeks, followed by application of sheets containing 5% HQ during the healing phase of 4 weeks. Hemifacial epidermal melanosis, for which the sheets were applied, was compared with a contralateral face which was treated conventionally using RA and HQ. Twenty-four Japanese women who were enrolled in this study and followed up for more than 6 months were analyzed. RA/HQ sheets improved epidermal melanosis, as did the conventional bleaching method, but irritant dermatitis occurred less in patients treated using silicone sheets. RA/HQ sheets, which are easily applied to face skin, can improve epidermal melanosis to the same extent as conventional bleaching. © 2013 by the American Society for Dermatologic Surgery, Inc. Published by Wiley Periodicals, Inc.

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Joshua A.; Riddle, Matthew E.; Graziano, Diane J.

2015-08-12

Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of siliconmore » carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015–2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2–20 billion GJ depending on market adoption dynamics.« less

From SHG to mid-infrared SPDC generation in strained silicon waveguides

NASA Astrophysics Data System (ADS)

Castellan, Claudio; Trenti, Alessandro; Mancinelli, Mattia; Marchesini, Alessandro; Ghulinyan, Mher; Pucker, Georg; Pavesi, Lorenzo

2017-08-01

The centrosymmetric crystalline structure of Silicon inhibits second order nonlinear optical processes in this material. We report here that, by breaking the silicon symmetry with a stressing silicon nitride over-layer, Second Harmonic Generation (SHG) is obtained in suitably designed waveguides where multi-modal phase-matching is achieved. The modeling of the generated signal provides an effective strain-induced second order nonlinear coefficient of χ(2) = (0.30 +/- 0.02) pm/V. Our work opens also interesting perspectives on the reverse process, the Spontaneous Parametric Down Conversion (SPDC), through which it is possible to generate mid-infrared entangled photon pairs.

Evidence for interstellar SiC in the Murray carbonaceous meteorite

NASA Technical Reports Server (NTRS)

Bernatowicz, Thomas; Wopenka, Brigitte; Fraundorf, Gail; Ming, Tang; Anders, Edward

1987-01-01

Silicon carbide has been identified in two separates from the Murray carbonaceous chondrite that are enriched 20,000-fold in isotopically anomalous neon and xenon. The SiC is present in the form of crystalline grains 0.1-1 micron in size. Cubic and 111-plane-twinned cubic are the most common ordered polytypes observed so far. The anomalous isotopic composition of its carbon, nitrogen, and silicon indicates a presolar origin, probably in the atmospheres of red giants. An additional silicon- and oxygen-rich phase shows large isotropic anomalies in nitrogen and silicon, also associated with a presolar origin.

Functionalization of 2D macroporous silicon under the high-pressure oxidation

NASA Astrophysics Data System (ADS)

Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

2018-03-01

Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

Mechanical Properties of Photovoltaic Silicon in Relation to Wafer Breakage

NASA Astrophysics Data System (ADS)

Kulshreshtha, Prashant Kumar

This thesis focuses on the fundamental understanding of stress-modified crack-propagation in photovoltaic (PV) silicon in relation to the critical issue of PV silicon "wafer breakage". The interactions between a propagating crack and impurities/defects/residual stresses have been evaluated for consequential fracture path in a thin PV Si wafer. To investigate the mechanism of brittle fracture in silicon, the phase transformations induced by elastic energy released at a propagating crack-tip have been evaluated by locally stressing the diamond cubic Si lattice using a rigid Berkovich nanoindenter tip (radius ≈50 nm). Unique pressure induced phase transformations and hardness variations have been then related to the distribution of precipitates (O, Cu, Fe etc.), and the local stresses in the wafer. This research demonstrates for the first time the "ductile-like fracture" in almost circular crack path that significantly deviates from its energetically favorable crystallographic [110](111) system. These large diameter (≈ 200 mm) Si wafers were sliced to less than 180 microm thickness from a Czochralski (CZ) ingot that was grown at faster than normal growth rates. The vacancy (vSi) driven precipitation of oxygen at enhanced thermal gradients in the wafer core develops large localized stresses (upto 100 MPa) which we evaluated using Raman spectral analysis. Additional micro-FTIR mapping and microscopic etch pit measurements in the wafer core have related the observed crack path deviations to the presence of concentric ring-like distributions of oxygen precipitates (OPs). To replicate these "real-world" breakage scenarios and provide better insight on crack-propagation, several new and innovative tools/devices/methods have been developed in this study. An accurate quantitative profiling of local stress, phase changes and load-carrying ability of Si lattice has been performed in the vicinity of the controlled micro-cracks created using micro-indentations to represent the surface/edge micro-cracks (i.e. sources of crack initiation). The low load (<10mN) nanoindentations using Hysitron Triboindenter RTM have been applied to estimate the zone of crack-propagation related plastic deformation and amorphization around the radial or the lateral cracks. The gradual reduction in hardness due to local stress field and phase change around the crack has been established using electron back scattered diffraction (EBSD), atomic force microscopy (AFM) and Raman spectroscopy, respectively, at nano- and micro-scale. The load (P) vs. displacement (h) curves depict characteristic phase transformation events (eg. elbow or pop-out) depending on the sign of residual stress in the silicon lattice. The formation of Si-XII/III phases (elastic phases) in large volumes during indentation of compressed Si lattice have been discussed as an option to eliminate the edge micro-cracks formed during wafer sawing by ductile flow. The stress gradient at an interface, which can be a grain-boundary (GB), twin or a interface between silicon and precipitate, has been evaluated for crack path modification. An direct-silicon-bonded (DSB) based ideal [110]/[100] interface has been examined to study the effect of crystallographic orientation variation across a planar silicon 2D boundary. Using constant source diffusion/annealing process, Fe and Cu impurities have been incorporated in model [110]/[100]GB to provide equivalence to a real decorated multi-crystalline grain boundary. We found that Fe precipitates harden the undecorated GB structure, whereas Cu precipitates introduce dislocation-induced plasticity to soften it. Aluminum Schottky diodes have been evaporated on the DSB samples to sensitively detect the instantaneous current response from the phase-transformed Si under nanoindenter tip. The impact of metallic impurity and their precipitates on characteristic phase transformations (i.e. pop-in or pop-out) demonstrate that scattered distribution of large Cu-precipitates (upto 50 nm) compresses Si-lattice to facilitate Si-XII/III formations, i.e. high pressure ductile phases. Sweeping voltage measurements at a given load determine that Si lattice has to be stressed beyond 1 mN to complete the Si-I (semiconducting) to Si-II (ohmic) phase changes. Above 1 mN load DSB sample has a varistor-like behavior due to higher grain-boundary resistance from interfacial states. The precipitate defect structure stimulated stresses at the bulk Si lattice or grain boundary modify the rate of elastic energy release at the crack-tip and associated phase change and hardness values in response to external loading. The systematic approach in this thesis elucidates that the interfacial surface area between Si-lattice and precipitate plays pivotal role in defining extent of stresses in the silicon, i.e. smaller precipitates in higher densities are severe than few larger volume precipitates. The finding of high-pressure ductile phase formation during loading of compressed silicon structure has been suggested to PV industry as a prospective candidate for reducing the wafer breakage and allowing larger handling stresses.

Study of silicon doped with zinc ions and annealed in oxygen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Privezentsev, V. V., E-mail: v.privezentsev@mail.ru; Kirilenko, E. P.; Goryachev, A. N.

2017-02-15

The results of studies of the surface layer of silicon and the formation of precipitates in Czochralski n-Si (100) samples implanted with {sup 64}Zn{sup +} ions with an energy of 50 keV and a dose of 5 × 10{sup 16} cm{sup –2} at room temperature and then oxidized at temperatures from 400 to 900°C are reported. The surface is visualized using an electron microscope, while visualization of the surface layer is conducted via profiling in depth by elemental mapping using Auger electron spectroscopy. The distribution of impurity ions in silicon is analyzed using a time-of-flight secondary-ion mass spectrometer. Using X-raymore » photoelectron spectroscopy, the chemical state of atoms of the silicon matrix and zinc and oxygen impurity atoms is studied, and the phase composition of the implanted and annealed samples is refined. After the implantation of zinc, two maxima of the zinc concentration, one at the wafer surface and the other at a depth of 70 nm, are observed. In this case, nanoparticles of the Zn metal phase and ZnO phase, about 10 nm in dimensions, are formed at the surface and in the surface layer. After annealing in oxygen, the ZnO · Zn{sub 2}SiO{sub 4} and Zn · ZnO phases are detected near the surface and at a depth of 50 nm, respectively.« less

Gaseous hexane biodegradation by Fusarium solani in two liquid phase packed-bed and stirred-tank bioreactors.

PubMed

Arriaga, Sonia; Muñoz, Raúl; Hernández, Sergio; Guieysse, Benoit; Revah, Sergio

2006-04-01

Biofiltration of hydrophobic volatile pollutants is intrinsically limited by poor transfer of the pollutants from the gaseous to the liquid biotic phase, where biodegradation occurs. This study was conducted to evaluate the potential of silicone oil for enhancing the transport and subsequent biodegradation of hexane by the fungus Fusarium solani in various bioreactor configurations. Silicone oil was first selected among various solvents for its biocompatibility, nonbiodegradability, and good partitioning properties toward hexane. In batch tests, the use of silicone oil improved hexane specific biodegradation by approximately 60%. Subsequent biodegradation experiments were conducted in stirred-tank (1.5 L) and packed-bed (2.5 L) bioreactors fed with a constant gaseous hexane load of 180 g x m(-3)(reactor) x h(-1) and operated for 12 and 40 days, respectively. In the stirred reactors, the maximum hexane elimination capacity (EC) increased from 50 g x m(-3)(reactor) x h(-1) (removal efficiency, RE of 28%) in the control not supplied with silicone oil to 120 g x m(-3)(reactor) x h(-1) in the biphasic system (67% RE). In the packed-bed bioreactors, the maximum EC ranged from 110 (50% RE) to 180 g x m(-3)(reactor) x h(-1) (> 90% RE) in the control and two-liquid-phase systems, respectively. These results represent, to the best of our knowledge, the first reported case of fungi use in a two-liquid-phase bioreactor and the highest hexane removal capacities so far reported in biofilters.

Nanostructured silicon nitride from wheat and rice husks

NASA Astrophysics Data System (ADS)

Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Wollmershauser, J. A.; Feng, C. R.

2016-04-01

Nanoparticles, submicron-diameter tubes, and rods of Si3N4 were synthesized from the thermal treatment of wheat and rice husks at temperatures at and above 1300 °C in a nitrogen atmosphere. The whole pattern Rietveld analysis of the observed diffraction data from treatments at 1300 °C showed the formation of only hexagonal α-phase of Si3N4 with an R-factor of 1%, whereas samples treated at 1400 °C and above showed both α- and β-phases with an R-factor of 2%. Transmission electron microscopy showed the presence of tubes, rods, and nanoparticles of Si3N4. In a two-step process, where pure SiC was produced first from rice or wheat husk in an argon atmosphere and subsequently treated in a nitrogen atmosphere at 1450 °C, a nanostructured composite material having α- and β-phases of Si3N4 combined with cubic phase of SiC was formed. The thermodynamics of the formation of silicon nitride is discussed in terms of the solid state reaction between organic matter (silica content), which is inherently present in the wheat and rice husks, with the nitrogen from the furnace atmosphere. Nanostructures of silicon nitride formed by a single direct reaction or their composites with SiC formed in a two-step process of agricultural byproducts provide an uncomplicated sustainable synthesis route for silicon nitride used in mechanical, biotechnology, and electro-optic nanotechnology applications.

Multiple Coulomb scattering in thin silicon

NASA Astrophysics Data System (ADS)

Berger, N.; Buniatyan, A.; Eckert, P.; Förster, F.; Gredig, R.; Kovalenko, O.; Kiehn, M.; Philipp, R.; Schöning, A.; Wiedner, D.

2014-07-01

We present a measurement of multiple Coulomb scattering of 1 to 6 GeV/c electrons in thin (50-140 μm) silicon targets. The data were obtained with the EUDET telescope Aconite at DESY and are compared to parametrisations as used in the Geant4 software package. We find good agreement between data and simulation in the scattering distribution width but large deviations in the shape of the distribution. In order to achieve a better description of the shape, a new scattering model based on a Student's t distribution is developed and compared to the data.

On the timing performance of thin planar silicon sensors

NASA Astrophysics Data System (ADS)

Akchurin, N.; Ciriolo, V.; Currás, E.; Damgov, J.; Fernández, M.; Gallrapp, C.; Gray, L.; Junkes, A.; Mannelli, M.; Martin Kwok, K. H.; Meridiani, P.; Moll, M.; Nourbakhsh, S.; Pigazzini, S.; Scharf, C.; Silva, P.; Steinbrueck, G.; de Fatis, T. Tabarelli; Vila, I.

2017-07-01

We report on the signal timing capabilities of thin silicon sensors when traversed by multiple simultaneous minimum ionizing particles (MIP). Three different planar sensors, with depletion thicknesses 133, 211, and 285 μm, have been exposed to high energy muons and electrons at CERN. We describe signal shape and timing resolution measurements as well as the response of these devices as a function of the multiplicity of MIPs. We compare these measurements to simulations where possible. We achieve better than 20 ps timing resolution for signals larger than a few tens of MIPs.

Dehydration and dehydroxylation of C-S-H phases synthesized on silicon wafers

NASA Astrophysics Data System (ADS)

Giraudo, Nicolas; Bergdolt, Samuel; Laye, Fabrice; Krolla, Peter; Lahann, Joerg; Thissen, Peter

2018-03-01

In this work, the synthesis of specific ultrathin Calcium-Silicate-Hydrate (C-S-H) phases on silicon wafers and their transformation into C-S phases is achieved. Specific mineral phases are identified, and the synthesis is successful controlled. Samples are investigated by means of Fourier Transform Infrared (FTIR) spectroscopy and X-ray Diffraction (XRD) and the results are analyzed based on first-principles calculations. When C-S-H phases are transformed into C-S phases, only a few reflexes are detected on XRD, and the coherent scattering domains decrease with the increment of the temperature and time of exposure. This behavior is explained by the Ca/Si changes, which are identified by changes in the FTIR spectra. A thermodynamic analysis is performed with the help of first-principles calculations to underline the influence of the calcium-to-silicon (Ca/Si) ratio in the process of dehydroxylation. To increase the Ca/Si ratio water is partially substituted by methanol at the synthesis. This is observed in the FTIR spectra and is confirmed by lower temperatures of dehydroxylation. The catalytic nature of calcium towards the dehydroxylation is confirmed. The core of this work lies in the preparation of a model, which perfection makes possible to model reactivity, stability and mechanical properties using first-principles calculations, and is the starting point for the synthesis of many others.

Two dimensional thermo-optic beam steering using a silicon photonic optical phased array

NASA Astrophysics Data System (ADS)

Mahon, Rita; Preussner, Marcel W.; Rabinovich, William S.; Goetz, Peter G.; Kozak, Dmitry A.; Ferraro, Mike S.; Murphy, James L.

2016-03-01

Components for free space optical communication terminals such as lasers, amplifiers, and receivers have all seen substantial reduction in both size and power consumption over the past several decades. However, pointing systems, such as fast steering mirrors and gimbals, have remained large, slow and power-hungry. Optical phased arrays provide a possible solution for non-mechanical beam steering devices that can be compact and lower in power. Silicon photonics is a promising technology for phased arrays because it has the potential to scale to many elements and may be compatible with CMOS technology thereby enabling batch fabrication. For most free space optical communication applications, two-dimensional beam steering is needed. To date, silicon photonic phased arrays have achieved two-dimensional steering by combining thermo-optic steering, in-plane, with wavelength tuning by means of an output grating to give angular tuning, out-of-plane. While this architecture might work for certain static communication links, it would be difficult to implement for moving platforms. Other approaches have required N2 controls for an NxN element phased array, which leads to complexity. Hence, in this work we demonstrate steering using the thermo-optic effect for both dimensions with a simplified steering mechanism requiring only two control signals, one for each steering dimension.

Decomposition of silicon carbide at high pressures and temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daviau, Kierstin; Lee, Kanani K. M.

We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60more » GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.« less

Development of refractory armored silicon carbide by infrared transient liquid phase processing

NASA Astrophysics Data System (ADS)

Hinoki, Tatsuya; Snead, Lance L.; Blue, Craig A.

2005-12-01

Tungsten (W) and molybdenum (Mo) were coated on silicon carbide (SiC) for use as a refractory armor using a high power plasma arc lamp at powers up to 23.5 MW/m 2 in an argon flow environment. Both tungsten powder and molybdenum powder melted and formed coating layers on silicon carbide within a few seconds. The effect of substrate pre-treatment (vapor deposition of titanium (Ti) and tungsten, and annealing) and sample heating conditions on microstructure of the coating and coating/substrate interface were investigated. The microstructure was observed by scanning electron microscopy (SEM) and optical microscopy (OM). The mechanical properties of the coated materials were evaluated by four-point flexural tests. A strong tungsten coating was successfully applied to the silicon carbide substrate. Tungsten vapor deposition and pre-heating at 5.2 MW/m 2 made for a refractory layer containing no cracks propagating into the silicon carbide substrate. The tungsten coating was formed without the thick reaction layer. For this study, small tungsten carbide grains were observed adjacent to the interface in all conditions. In addition, relatively large, widely scattered tungsten carbide grains and a eutectic structure of tungsten and silicon were observed through the thickness in the coatings formed at lower powers and longer heating times. The strength of the silicon carbide substrate was somewhat decreased as a result of the processing. Vapor deposition of tungsten prior to powder coating helped prevent this degradation. In contrast, molybdenum coating was more challenging than tungsten coating due to the larger coefficient of thermal expansion (CTE) mismatch as compared to tungsten and silicon carbide. From this work it is concluded that refractory armoring of silicon carbide by Infrared Transient Liquid Phase Processing is possible. The tungsten armored silicon carbide samples proved uniform, strong, and capable of withstanding thermal fatigue testing.

Search for new phases in the Praseodymium-Silicon system

NASA Astrophysics Data System (ADS)

de La Venta, Jose; Basaran, Ali C.; Grant, Ted; Gallardo-Amores, J.; Ramirez, J. G.; Suchomel, M. R.; Alario-Franco, M. A.; Fisk, Zachary; Schuller, Ivan K.

2013-03-01

We searched for new superconducting and magnetic phases in the Pr-Si system using high-pressure high-temperature and conventional arc melting syntheses. High pressure synthesis is a unique technique which allows incorporation of elements into compounds which otherwise cannot be synthesized at ambient pressure Both high and low Si concentration areas of the phase diagram were explored. To investigate the high Si concentration compounds, PrSi2 with an excess of Si was subjected to HP-HT synthesis. To explore the high Pr concentration binary compound Pr5Si3, we have synthesized undoped Pr5Si3 as well as different samples doped with C or B. High resolution X-ray powder diffraction, Magnetic Field Modulated Microwave Spectroscopy and magnetic characterization found that the addition of C gave rise to multiple previously-unknown ferromagnetic phases. Furthermore, X-ray refinement of the undoped samples confirmed the existence of the so far unconfirmed Pr3Si2 phase. Work supported by AFOSR MURI #F49550-09-1-0577 dedicated to Search for New Superconductors for Energy and Power A. Use of the Advanced Photon Source at ANL was supported by the U. S. DoE, Office of Basic Energy Sciences, Contract No. DE-AC02-06CH11357.

Investigation of semiconductor clad optical waveguides

NASA Technical Reports Server (NTRS)

Batchman, T. E.; Mcwright, G.

1981-01-01

The properties of semiconductor-clad optical waveguides based on glass substrates were investigated. Computer modeling studies on four-layer silicon-clad planar dielectric waveguides indicated that the attenuation and mode index should behave as exponentially damped sinusoids as the silicon thickness is decreased below one micrometer. This effect can be explained as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high refractive index silicon. The computer studies also show that both the attenuation and mode index of the propagating mode are significantly altered by conductivity charges in the silicon. Silicon claddings were RF sputtered onto AgNO3-NaNO3 ion exchanged waveguides and preliminary measurements of attenuation were made. An expression was developed which predicts the attenuation of the silicon clad waveguide from the attenuation and phase characteristics of a silicon waveguide. Several applications of these clad waveguides are suggested and methods for increasing the photo response of the RF sputtered silicon films are described.

Silicon RFIC Techniques for Reconfigurable Military Applications

DTIC Science & Technology

2008-12-01

21 3.2.1 Motivation ...2008-295 21 3.2 Distributed Cascode LNAs at 20 GHz 3.2.1 Motivation Millimetrewave integrated circuits are traditionally implemented using...ZRef=50. Ohm Phase=-45. PhaseShiftSML PS4 ZRef=50. Ohm Phase=-22.5 PhaseShiftSML PS7 ZRef=50. Ohm Phase=-180 PhaseShiftSML PS8 ZRef=50. Ohm Phase=-180

Experimental Investigation of Latent Heat Thermal Energy Storage for Bi-Modal Solar Thermal Propulsion

DTIC Science & Technology

2014-06-01

additional SIC -6 testing due to the success in 80% trials. However, it must be noted that the contamination of the silicon bulk has yet to be...freezing cycles without sustaining damage from volumetric expansion of the silicon PCM. The success of tests using SIC -6 graphite indicates that...studies have suggested the use of high temperature phase change materials (PCMs) such as silicon and boron. To date, developmental constraints and a

A study of vapor-phase deposition of silicon nitride layers by ammonolysis of dichlorosilane at lowered pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manzha, N. M., E-mail: magazine@miee.ru

2010-12-15

Deposition kinetics of silicon nitride layers at lowered reactor pressures of 10-130 Pa and temperatures in the range 973-1073 K has been studied. The equilibrium constant of the bimolecular reaction of dichlorosilane with ammonia has been calculated. The apparent activation energies calculated taking into account the experimental growth rate nearly coincide with the experimental data. Recommendations for improving the quality of silicon nitride layers are made.

Characterization of nanostructured CuO-porous silicon matrix formed on copper-coated silicon substrate via electrochemical etching

NASA Astrophysics Data System (ADS)

Naddaf, M.; Mrad, O.; Al-zier, A.

2014-06-01

A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak `blue' PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.

Nanoindentation of silicon implanted with hydrogen: effect of implantation dose on silicon’s mechanical properties and nanoindentation-induced phase transformation

NASA Astrophysics Data System (ADS)

Jelenković, Emil V.; To, Suet; Goncharova, Lyudmila V.; Wong, Sing Fai

2017-07-01

Implantation of hydrogen in single-crystal silicon (c-Si) is known to affect its machining. However, very little is reported on the material and mechanical properties of hydrogen-implanted silicon (Si). In this article, near-surface regions (~0-500 nm) of lightly doped (1 0 0) Si were modified by varying the hydrogen concentration using ion implantation. The maximum hydrogen concentration was varied from ~4  ×  1020 to ~3.2  ×  1021 cm-3. The implanted Si was investigated by nanoindentation. From the dynamic nanoindentation test, it was found that in hydrogen-implanted Si hardness is increased significantly, while the elastic modulus is reduced. The nanoindentation-induced Si phase transformation was studied under different load/unload rates and loads. Raman spectroscopy revealed that the hydrogen implantation tends to suppress Si-XII and Si-III phases and facilitates amorphous Si formation during the unloading stage of nanoindentation. Both the mechanical properties and phase transformations were qualitatively related not only to the hydrogen concentration, but also to the implantation-generated defects and strain.

An Experimental Visualization and Image Analysis of Electrohydrodynamically Induced Vapor-Phase Silicon Oil Flow under DC Corona Discharge

NASA Astrophysics Data System (ADS)

Ohyama, Ryu-Ichiro; Fukumoto, Masaru

A DC corona discharge induced electrohydrodynamic (EHD) flow phenomenon for a multi-phase fluid containing a vapor-phase dielectric liquid in the fresh air was investigated. The experimental electrode system was a simple arrangement of needle-plate electrodes for the corona discharges and high-resistivity silicon oil was used as the vapor-phase liquid enclosure. The qualitative observation of EHD flow patterns was conducted by an optical processing on computer tomography and the time-series of discharge current pulse generations at corona discharge electrode were measured simultaneously. These experimental results were analyzed in relationship between the EHD flow motions and the current pulse generations in synchronization. The current pulses and the EHD flow motions from the corona discharge electrode presented a continuous mode similar to the ionic wind in the fresh air and an intermittent mode. In the intermittent mode, the observed EHD flow motion was synchronized with the separated discharge pulse generations. From these experimental results, it was expected that the existence of silicon oil vapor trapped charges gave an occasion to the intermittent generations of the discharge pulses and the secondary EHD flow.

Appearance of low signal intensity lines in MRI of silicone breast implants.

PubMed

Stroman, P W; Rolland, C; Dufour, M; Grondin, P; Guidoin, R G

1996-05-01

Magnetic resonance (MR) images of five explanted mammary prostheses were obtained with a 1.5 T GE Signa system using a conventional spin-echo pulse sequence, in order to investigate the low-intensity curvilinear lines which may be observed in MR images of silicone gel-filled breast implants under pressure from fibrous capsules. MR images showed ellipsoid prostheses, often containing multiple low-intensity curvilinear lines which in some cases presented an appearance very similar to that of the linguine sign. Upon opening the fibrous capsules, however, all of the prostheses were found to be completely intact demonstrating that the appearance of multiple low signal intensity curvilinear lines in MR images of silicone gel-filled prostheses is not necessarily a sign of prosthesis rupture. The MR image features which are specific to the linguine sign must be more precisely defined.

Silicon Materials Task of the Low Cost Solar Array Project, Phase 3. Effect of Impurities and Processing on Silicon Solar Cells

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R.; Blais, P. D.; Rohatgi, A.; Campbell, R. B.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

1979-01-01

The effects of impurities, various thermochemical processes, and any impurity process interactions on the performance of terrestrial silicon solar cells are defined. Determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals are reported. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon while atomic absorption was used to measure the metal content of the residual liquid from which the doped crystals were grown. Gettering of Ti doped silicon wafers improved cell performance by one to two percent for the highest temperatures and longest times. The HCl is more effective than POCl3 treatments for deactivating Ti but POCl3 and HCl produced essentially identical results for Mo or Fe.

THERMODYNAMICS OF THE CHLORINE-HYDROGEN-SILICON SYSTEM.

DTIC Science & Technology

The equilibrium composition of the gas phase and the weight of silicon deposited were calculated for SiCl4 /H2 and SiHCl3/H2 mixtures at temperatures... SiCl4 /H2 and SiHCl3/H2 mixtures may be explained in terms of thermodynamics alone. (Author)

Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

DOEpatents

Sharp, Kenneth G.; D'Errico, John J.

1988-01-01

The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

Design, fabrication and test of prototype furnace for continuous growth of wide silicon ribbon

NASA Technical Reports Server (NTRS)

Duncan, C. S.; Seidensticker, R. G.

1975-01-01

Progress is reported during the apparatus design, fabrication, and assembly phases of a program to grow wide, thin silicon dendritic web. The growth facility was essentially completed with any significant problems arising. A complete set of detailed fabrication drawings is included as an appendix.

First performance results of the Phobos silicon detectors

NASA Astrophysics Data System (ADS)

Pernegger, H.; Back, B. B.; Baker, M. D.; Barton, D. S.; Betts, R. R.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Decowski, M. P.; Garcia, E.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Heintzelman, G. A.; Henderson, C.; Hołyński, R.; Hofman, D. J.; Holzman, B.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Lin, W. T.; Manly, S.; McLeod, D.; Michalowski, J.; Mignerey, A.; Mülmenstädt, J.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sarin, P.; Sawicki, P.; Skulski, W.; Steadman, S. G.; Stephans, G. S. F.; Steinberg, P.; Stodulski, M.; Sukhanov, A.; Tang, J.-L.; Teng, R.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Wadsworth, B.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.

2001-11-01

The Phobos experiment concluded its first year of operation at RHIC taking data in Au-Au nucleus collisions at s nn=65 GeV and 130 GeV/ nucleon pair. First preliminary results of the performances of our silicon detectors in the experiment are summarized. The Phobos experiment uses silicon pad detectors for both tracking and multiplicity measurements. The silicon sensors vary strongly in their pad geometry. In this paper, we compare the signal response, the signal uniformity and signal-to-noise performance as measured in the experiment for the different geometries. Additionally, we investigate effects of very high channel occupancy on the signal response.

Dominant Overall Chemical Reaction in a Chlorine Trifluoride Silicon Nitrogen System at Atmospheric Pressure

NASA Astrophysics Data System (ADS)

Habuka, Hitoshi; Otsuka, Toru; Qu, Wei-Feng

1999-11-01

This study evaluates the overall chemical reaction in a chlorine trifluoride silicon nitrogen system at atmospheric pressure, based on the observation of the dominant chemical species in the gas phase using a quadrupole mass spectra analyzer coupled with a horizontal cold-wall single-wafer epitaxial reactor. Chlorine trifluoride gas etches the silicon surface, producing two major products, silicon tetrafluoride gas and chlorine gas, at room temperature and 530 K. The production of chlorosilanes was not observed in this study. The results obtained in this study indicate that the dominant overall chemical reaction in a chlorine trifluoride silicon nitrogen system is 3Si + 4ClF3 →3SiF4 ↑+ 2Cl2 ↑.

Thermodynamics of a phase transition of silicon nanoparticles at the annealing and carbonization of porous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagornov, Yu. S., E-mail: Nagornov.Yuri@gmail.com

2015-12-15

The formation of SiC nanocrystals of the cubic modification in the process of high-temperature carbonization of porous silicon has been analyzed. A thermodynamic model has been proposed to describe the experimental data obtained by atomic-force microscopy, Raman scattering, spectral analysis, Auger spectroscopy, and X-ray diffraction spectroscopy. It has been shown that the surface energy of silicon nanoparticles and quantum filaments is released in the process of annealing and carbonization. The Monte Carlo simulation has shown that the released energy makes it possible to overcome the nucleation barrier and to form SiC nanocrystals. The processes of laser annealing and electron irradiationmore » of carbonized porous silicon have been analyzed.« less

A novel one-pot room-temperature synthesis route to produce very small photoluminescent silicon nanocrystals

NASA Astrophysics Data System (ADS)

Douglas-Gallardo, Oscar A.; Burgos-Paci, Maxi A.; Mendoza-Cruz, Rubén; Putnam, Karl G.; Josefina Arellano-Jiménez, M.; José-Yacamán, Miguel; Mariscal, Marcelo M.; Macagno, Vicente A.; Sánchez, Cristián G.; Pérez, Manuel A.

2018-03-01

A novel strategy to synthesize photoluminescent silicon nanocrystals (SiNCs) from a reaction between tetraethylorthosilicate (TEOS) and trimethyl-hexadecyl-ammonium borohydride (CTABH4) in organic solvent is presented. The formation reaction occurs spontaneously at room temperature in homogeneous phase. The produced silicon nanocrystals are characterized by using their photoluminescent properties and via HRTEM. In addition, theoretical calculations of the optical absorption spectrum of silicon quantum dots in vacuum with different sizes and surface moieties were performed in order to compare with the experimental findings. The new chemical reaction is simple and can be implemented to produce silicon nanocrystal with regular laboratory materials by performing easy and safe procedures. [Figure not available: see fulltext.

Development of an All-Metal Thick Film Cost Effective Metallization System for Solar Cells

NASA Technical Reports Server (NTRS)

Ross, B.

1980-01-01

Materials including copper powders, silver-fluoride, and silicon wafers were procured and copper pastes were prepared. Electrodes made with copper pastes were analyzed and compared with the raw materials. A needle-like structure was observed on the electroded solar cells, and was identified as eutectic copper-silicon by electron probe X-ray spectroscopy. The existence of this phase was thought to benefit electrical and metallurgical properties of the contact. Subsequently electrodes made from new material were also shown to contain this phase while simultaneously having poor adhesion.

Retrieval of the atomic displacements in the crystal from the coherent X-ray diffraction pattern.

PubMed

Minkevich, A A; Köhl, M; Escoubas, S; Thomas, O; Baumbach, T

2014-07-01

The retrieval of spatially resolved atomic displacements is investigated via the phases of the direct(real)-space image reconstructed from the strained crystal's coherent X-ray diffraction pattern. It is demonstrated that limiting the spatial variation of the first- and second-order spatial displacement derivatives improves convergence of the iterative phase-retrieval algorithm for displacements reconstructions to the true solution. This approach is exploited to retrieve the displacement in a periodic array of silicon lines isolated by silicon dioxide filled trenches.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Nanosize relief: from phase masks to antireflection coatings on quartz and silicon

NASA Astrophysics Data System (ADS)

Verevkin, Yu K.; Klimov, A. Yu; Gribkov, B. A.; Petryakov, V. N.; Koposova, E. V.; Olaizola, Santiago M.

2008-11-01

By using the interference of pulsed radiation and a complete lithographic cycle, phase masks on quartz and antireflection structures on quartz and silicon are produced. The transmission of radiation through a corrugated vacuum—solid interface is calculated by solving rigorously an integral equation with the help of a computer program for parameters close to experimental parameters. The results of measurements are in good agreement with calculations. The methods developed in the paper can be used for manufacturing optical and semiconductor devices.

Use of an Annular Silicon Drift Detector (SDD) Versus a Conventional SDD Makes Phase Mapping a Practical Solution for Rare Earth Mineral Characterization.

PubMed

Teng, Chaoyi; Demers, Hendrix; Brodusch, Nicolas; Waters, Kristian; Gauvin, Raynald

2018-06-04

A number of techniques for the characterization of rare earth minerals (REM) have been developed and are widely applied in the mining industry. However, most of them are limited to a global analysis due to their low spatial resolution. In this work, phase map analyses were performed on REM with an annular silicon drift detector (aSDD) attached to a field emission scanning electron microscope. The optimal conditions for the aSDD were explored, and the high-resolution phase maps generated at a low accelerating voltage identify phases at the micron scale. In comparisons between an annular and a conventional SDD, the aSDD performed at optimized conditions, making the phase map a practical solution for choosing an appropriate grinding size, judging the efficiency of different separation processes, and optimizing a REM beneficiation flowsheet.

Stress induced phase transitions in silicon

NASA Astrophysics Data System (ADS)

Budnitzki, M.; Kuna, M.

2016-10-01

Silicon has a tremendous importance as an electronic, structural and optical material. Modeling the interaction of a silicon surface with a pointed asperity at room temperature is a major step towards the understanding of various phenomena related to brittle as well as ductile regime machining of this semiconductor. If subjected to pressure or contact loading, silicon undergoes a series of stress-driven phase transitions accompanied by large volume changes. In order to understand the material's response for complex non-hydrostatic loading situations, dedicated constitutive models are required. While a significant body of literature exists for the dislocation dominated high-temperature deformation regime, the constitutive laws used for the technologically relevant rapid low-temperature loading have severe limitations, as they do not account for the relevant phase transitions. We developed a novel finite deformation constitutive model set within the framework of thermodynamics with internal variables that captures the stress induced semiconductor-to-metal (cd-Si → β-Si), metal-to-amorphous (β-Si → a-Si) as well as amorphous-to-amorphous (a-Si → hda-Si, hda-Si → a-Si) transitions. The model parameters were identified in part directly from diamond anvil cell data and in part from instrumented indentation by the solution of an inverse problem. The constitutive model was verified by successfully predicting the transformation stress under uniaxial compression and load-displacement curves for different indenters for single loading-unloading cycles as well as repeated indentation. To the authors' knowledge this is the first constitutive model that is able to adequately describe cyclic indentation in silicon.

First XMM-Newton Observations of a Cataclysmic Variable II: Spectral Studies of OY Car

NASA Technical Reports Server (NTRS)

Ramsay, Gavin; Cordova, France; Cottam, Jean; Mason, Keith; Much, Rudu; Osborne, Julian; Pandel, Dirk; Poole, Tracey; Wheatley, Peter

2000-01-01

We present XMM-Newton X-ray spectra of the disc accreting cataclysmic variable OY Car, which were obtained during the performance verification phase of the mission. These data were taken 4 days after a short outburst. In the EPIC spectra we find strong Iron K(beta) emission with weaker Iron K(alpha) emission together with Silicon and Sulphur lines. The spectra are best fitted with a three temperature plasma model with a partial covering absorber. Multiple temperature emission is confirmed by the emission lines seen in the RGS spectrum and the H/He like intensity ratio for Iron and Sulphur which imply temperatures of approx. 7keV and approx. 3keV respectively.

Energy requirement for the production of silicon solar arrays

NASA Technical Reports Server (NTRS)

Lindmayer, J.; Wihl, M.; Scheinine, A.; Morrison, A.

1977-01-01

An assessment of potential changes and alternative technologies which could impact the photovoltaic manufacturing process is presented. Topics discussed include: a multiple wire saw, ribbon growth techniques, silicon casting, and a computer model for a large-scale solar power plant. Emphasis is placed on reducing the energy demands of the manufacturing process.

Silicon carbide/calcium aluminosilicate: A notch-insensitive ceramic-matrix composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cady, C.M.; Mackin, T.J.; Evans, A.G.

Tension experiments performed on a 0/90 laminated silicon carbide/calcium aluminosilicate composite at room temperature establish that this material is notch insensitive. Multiple matrix cracking is determined to be the stress redistribution mechanism. This mechanism is found to provide a particularly efficient means for creating local inelastic strains, which eliminate stress concentrations.

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

NASA Astrophysics Data System (ADS)

Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

2018-02-01

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

A hybrid approach to device integration on a genetic analysis platform

NASA Astrophysics Data System (ADS)

Brennan, Des; Jary, Dorothee; Kurg, Ants; Berik, Evgeny; Justice, John; Aherne, Margaret; Macek, Milan; Galvin, Paul

2012-10-01

Point-of-care (POC) systems require significant component integration to implement biochemical protocols associated with molecular diagnostic assays. Hybrid platforms where discrete components are combined in a single platform are a suitable approach to integration, where combining multiple device fabrication steps on a single substrate is not possible due to incompatible or costly fabrication steps. We integrate three devices each with a specific system functionality: (i) a silicon electro-wetting-on-dielectric (EWOD) device to move and mix sample and reagent droplets in an oil phase, (ii) a polymer microfluidic chip containing channels and reservoirs and (iii) an aqueous phase glass microarray for fluorescence microarray hybridization detection. The EWOD device offers the possibility of fully integrating on-chip sample preparation using nanolitre sample and reagent volumes. A key challenge is sample transfer from the oil phase EWOD device to the aqueous phase microarray for hybridization detection. The EWOD device, waveguide performance and functionality are maintained during the integration process. An on-chip biochemical protocol for arrayed primer extension (APEX) was implemented for single nucleotide polymorphism (SNiP) analysis. The prepared sample is aspirated from the EWOD oil phase to the aqueous phase microarray for hybridization. A bench-top instrumentation system was also developed around the integrated platform to drive the EWOD electrodes, implement APEX sample heating and image the microarray after hybridization.

Mechanical Property Evaluation at Elevated Temperatures of Sintered Beta Silicon Carbide.

DTIC Science & Technology

1986-03-01

a co mercial- sintered product. 1-7 It is fabricated from a submicron (beta) silicon carbide powder with small additions (f-0.5 wtZ each) of goron and...majority of the material-is beta silicon carbide with a small percentage of the alpha phase and a small amount of graphite. In a parallel study being...surface-connected porosity (Figures 12 and 13). This porosity was often an area of small interconnected porosity and not necessarily a discrete void

Modeling and Optimization for Epitaxial Growth: Transport and Growth Studies

DTIC Science & Technology

1999-01-01

effect . It is expressed as the sum of these two components j i jC i jT i where jC i and jT i denote the concentration driven and thermally driven...improve manufacturing effectiveness for epitaxial growth of silicon and silicon-germanium (Si-Ge) thin films on a silicon wafer. Growth takes place in the...non-uniformity to compensate for the effects of other phenomena such as reactant depletion, gas heating and gas phase reactions, thermal diffusion of

Changes in size of nano phase iron inclusions with temperature: Experimental simulation of space weathering effects at high temperature

NASA Astrophysics Data System (ADS)

Rout, S. S.; Moroz, L. V.; Stockhoff, T.; Baither, D.; Bischoff, A.; Hiesinger, H.

2011-10-01

The mean size of nano phase iron inclusions (npFe0), produced during the space weathering of iron-rich regolith of airless solar system bodies, significantly affects visible and near-infrared (VNIR) spectra. To experimentally simulate the change in the size of npFe0 inclusions with increasing temperature, we produced sputter film deposits on a silicon dioxide substrate by sputtering a pressed pellet prepared from fine olivine powder using 600V Ar+ ions. This silicon dioxide substrate covered with the deposit was later heated to 450°C for 24 hours in an oven under argon atmosphere. Initial TEM analysis of the unheated silicon dioxide substrate showed the presence of a ~ 50 nm-thick layer of an amorphous deposit with nano clusters that has not yet been identified.

Silicon materials task of the low cost solar array project, phase 2

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Davis, J. R., Jr.; Blais, P. D.; Rohatgi, A.; Rai-Choudhury, P.; Hanes, M. H.; Mccormick, J. R.

1977-01-01

The object of phase 2 of this program is to investigate and define the effects of various processes, contaminants and process-contaminant interactions in the performance of terrestrial solar cells. The major effort this quarter was in the areas of crystal growth and thermal processing, comparison of impurity effects in low and high resistivity silicon, modeling the behavior of p-type ingots containing Mo, and C and, quantitative analysis of bulk lifetime and junction degradation effects in contaminated solar cells. The performance of solar cells fabricated on silicon web crystals grown from melts containing about 10 to the 18th power/cu cm of Cr, Mn, Fe, Ni, Ti, and V, respectively were measured. Deep level spectroscopy of metal-contaminated ingots was employed to determine the level and density of recombination centers due to Ti, V, Ni, and Cr.

Growth and characterization of Pt-Si droplets for silicon nanowires synthesis

NASA Astrophysics Data System (ADS)

Khumalo, Z. M.; Topić, M.; Mtshali, C. B.; Blumenthal, M.

2018-02-01

The formation of platinum silicide phases as a function of the annealing temperature was investigated using in-situ real-time Rutherford backscattering spectrometry. The in-situ real-time RBS revealed the reaction of platinum and silicon to start at about 220 °C to form platinum silicide phases, Pt2Si and PtSi in sequence. Scanning electron microscope revealed the morphological change in the platinum layer (formation of droplets) at 800 °C. The particle induced X-ray emission analysis showed the variation of platinum intensity, in the droplets areas, between 1600 and 2000 counts. The surrounding areas are left almost uncovered due to platinum film dewetting. In-plane as well as out-of-plane silicon nanowires were observed to form at 800 °C and 1000 °C using pulsed laser ablation and thermal annealing techniques, respectively.

Silicon material task - Low cost solar array project /JPL/DOE/

NASA Technical Reports Server (NTRS)

Lutwack, R.

1979-01-01

The paper describes the silicon material task of the low-cost solar array project, which has the objective of establishing a silicon production capability equivalent to 500 mW per year at a price less than 10 dollars/kg (1975 dollars) in 1986. The task program is divided into four phases: technical feasibility, scale-up studies (the present phase), experimental process system development units, and implementation of large-scale production plants, and it involves the development of processes for two groups of materials, that is, semiconductor grade and solar cell grade. In addition, the effects of impurities on solar cell performance are being investigated. Attention is given to problem areas of the task program, such as environmental protection, material compatibility between the reacting chemicals and materials of construction of the equipment, and waste disposal.

Physics of Shock Compression and Release: NEMD Simulations of Tantalum and Silicon

NASA Astrophysics Data System (ADS)

Hahn, Eric; Meyers, Marc; Zhao, Shiteng; Remington, Bruce; Bringa, Eduardo; Germann, Tim; Ravelo, Ramon; Hammerberg, James

2015-06-01

Shock compression and release allow us to evaluate physical deformation and damage mechanisms occurring in extreme environments. SPaSM and LAMMPS molecular dynamics codes were employed to simulate single and polycrystalline tantalum and silicon at strain rates above 108 s-1. Visualization and analysis was accomplished using OVITO, Crystal Analysis Tool, and a redesigned orientation imaging function implemented into SPaSM. A comparison between interatomic potentials for both Si and Ta (as pertaining to shock conditions) is conducted and the influence on phase transformation and plastic relaxation is discussed. Partial dislocations, shear induced disordering, and metastable phase changes are observed in compressed silicon. For tantalum, the role of grain boundary and twin intersections are evaluated for their role in ductile spallation. Finally, the temperature dependent response of both Ta and Si is investigated.

Effect of the carrier gas flow rate on the microstructure evolution and the generation of the charged nanoparticles during silicon chemical vapor deposition.

PubMed

Youn, Woong-Kyu; Kim, Chan-Soo; Hwang, Nong-Moon

2013-10-01

The generation of charged nanoparticles in the gas phase has been continually reported in many chemical vapor deposition processes. Charged silicon nanoparticles in the gas phase were measured using a differential mobility analyzer connected to an atmospheric-pressure chemical vapor deposition reactor at various nitrogen carrier gas flow rates (300-1000 standard cubic centimeter per minute) under typical conditions for silicon deposition at the reactor temperature of 900 degrees C. The carrier gas flow rate affected not only the growth behavior of nanostructures but also the number concentration and size distribution of both negatively and positively charged nanoparticles. As the carrier gas flow rate decreased, the growth behavior changed from films to nanowires, which grew without catalytic metal nanoparticles on a quartz substrate.

X-ray tests of a microchannel plate detector and amorphous silicon pixel array readout for neutron radiography

NASA Astrophysics Data System (ADS)

Ambrosi, R. M.; Street, R.; Feller, B.; Fraser, G. W.; Watterson, J. I. W.; Lanza, R. C.; Dowson, J.; Ross, D.; Martindale, A.; Abbey, A. F.; Vernon, D.

2007-03-01

High-performance large area imaging detectors for fast neutrons in the 5-14 MeV energy range do not exist at present. The aim of this project is to combine microchannel plates or MCPs (or similar electron multiplication structures) traditionally used in image intensifiers and X-ray detectors with amorphous silicon (a-Si) pixel arrays to produce a composite converter and intensifier position sensitive imaging system. This detector will provide an order of magnitude improvement in image resolution when compared with current millimetre resolution limits obtained using phosphor or scintillator-based hydrogen rich converters. In this study we present the results of the initial experimental evaluation of the prototype system. This study was carried out using a medical X-ray source for the proof of concept tests, the next phase will involve neutron imaging tests. The hybrid detector described in this study is a unique development and paves the way for large area position sensitive detectors consisting of MCP or microsphere plate detectors and a-Si or polysilicon pixel arrays. Applications include neutron and X-ray imaging for terrestrial applications. The technology could be extended to space instrumentation for X-ray astronomy.

High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation

NASA Astrophysics Data System (ADS)

Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2013-07-01

Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7 μm in length and 220 nm to 270 nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170 K.

Fast-timing Capabilities of Silicon Sensors for the CMS High-Granularity Calorimeter at the High-Luminosity LHC

NASA Astrophysics Data System (ADS)

Akchurin, Nural; CMS Collaboration

2017-11-01

We report on the signal timing capabilities of thin silicon sensors when traversed by multiple simultaneous minimum ionizing particles (MIP). Three different planar sensors, 133, 211, and 285 μm thick in depletion thickness, have been exposed to high energy muons and electrons at CERN. We describe signal shape and timing resolution measurements as well as the response of these devices as a function of the multiplicity of MIPs. We compare these measurements to simulations where possible. We achieve better than 20 ps timing resolution for signals larger than a few tens of MIPs.

Shock loading and release behavior of silicon nitride

NASA Astrophysics Data System (ADS)

Kawai, N.; Tsuru, T.; Hidaka, N.; Liu, X.; Mashimo, T.

2017-01-01

Shock-reshock and shock-release experiments were performed on silicon nitride ceramics above and below its phase transition pressure. Experimental results clearly show the occurrence of elastic-plastic transition and phase transition during initial shock loading. The HEL and phase transition stress are determined as 11.6 and 34.5 GPa, respectively. Below the phase transition stress, the reshock profile consists of the single shock with short rise time, while the release profile shows the gradual release followed by rapid one. Above phase transition stress, reshock and release behavior varies with the initial shock stress. In the case of reshock and release from about 40 GPa, the reshock structure is considerably dispersed, while the release structure shows rapid release. In the reshock profile from about 50 GPa, the formation of the shock wave with the small ramped precursor is observed. And, the release response from same shocked condition shows initial gradual release and subsequent quite rapid one. These results would provide the information about how phase transformation kinetics effects on the reshock and release behavior.

Compact polarization beam splitter for silicon photonic integrated circuits with a 340-nm-thick silicon core layer.

PubMed

Li, Chenlei; Dai, Daoxin

2017-11-01

A polarization beam splitter (PBS) is proposed and realized for silicon photonic integrated circuits with a 340-nm-thick silicon core layer by introducing an asymmetric directional coupler (ADC), which consists of a silicon-on-insulator (SOI) nanowire and a subwavelength grating (SWG) waveguide. The SWG is introduced to provide an optical waveguide which has much higher birefringence than a regular 340-nm-thick SOI nanowire, so that it is possible to make the phase-matching condition satisfied for TE polarization only in the present design when the waveguide dimensions are optimized. Meanwhile, there is a significant phase mismatching for TM polarization automatically. In this way, the present ADC enables strong polarization selectivity to realize a PBS that separates TE and TM polarizations to the cross and through ports, respectively. The realized PBS has a length of ∼2  μm for the coupling region. For the fabricated PBS, the extinction ratio (ER) is 15-30 dB and the excess loss is 0.2-2.6 dB for TE polarization while the ER is 20-27 dB and the excess loss is 0.3-2.8 dB for TM polarization when operating in the wavelength range of 1520-1580 nm.

Model Implementation of Boron Removal Using CaCl2-CaO-SiO2 Slag System for Solar-Grade Silicon

NASA Astrophysics Data System (ADS)

Chen, Hui; Wang, Ye; Zheng, Wenjia; Li, Qincan; Yuan, Xizhi; Morita, Kazuki

2017-12-01

A new CaCl2-CaO-SiO2 slag system was recently proposed to remove boron from metallurgy-grade silicon by oxidized chlorination and evaporation. To further investigate the boron transformation process at a high temperature, a model implementation to present the transfer of boron from molten silicon to the gas phase via slag is introduced. Heat transfer, fluid flow, the chemical reactions at the interface and surface, the mass transfer and diffusion of boron in the molten silicon and slag, and the evaporation of BOCl and CaCl2 were coupled in this model. After the confirmation of the thermal field, other critical parameters, including the boron partition ratios ( L B) for this slag from 1723 K to 1823 K (1450 °C to 1550 °C), the thicknesses of the velocity boundary layer at the surface and interface, the mass transfer coefficients of the boundary layer at the surface and interface, and partial pressure of BOCl in the gas phase were analyzed to determine the rate-limiting step. To verify this model implementation, boron removal experiments were carried out at various temperatures and with various initial mass ratios of slag to silicon ( μ). The evaporation rate of CaCl2 was also measured by thermogravimetry analysis (TGA).

Optical properties of silicon nanocrystals synthesized in supercritical fluids

NASA Astrophysics Data System (ADS)

Pell, Lindsay; Korgel, Brian A.

2002-11-01

We developed a supercritical solution phase synthesis of silicon nanocrystals. High temperature and pressure (500°C, >140 bar) conditions allow a wet chemical approach to this challenging synthesis. Diphenylsilane was used as a silicon precursor and long chain thiols and alcohols were used to sterically stabilize the luminescent nanocrystals. Moderate size separation was achieved via size exclusion chromatography using crosslinked styrene divinylbenzene beads. Size separated fractions of silicon nanocrystals exhibit quantum efficiencies of 12% while polydisperse samples have quantum efficiencies of 5%. Nanocrystal size distributions have been determined with transmission electron microscopy and further characterized with atomic force microscopy (AFM). These silicon nanocrystals have size tunable photoluminescence as indicated by their ensemble spectroscopy and further verified through AFM and single nanocrystal photoluminescence spectroscopy. Fluorescence intermittency (characteristic of single CdSe nanocrystals) is present in our isolated silicon nanocrystals and is one of the criteria used to distinguish single crystals from clusters of particles.

The automated array assembly task of the low-cost silicon solar array project, phase 2

NASA Technical Reports Server (NTRS)

Coleman, M. G.; Pryor, R. A.; Sparks, T. G.; Legge, R.; Saltzman, D. L.

1980-01-01

Several specific processing steps as part of a total process sequence for manufacturing silicon solar cells were studied. Ion implantation was identified as the preferred process step for impurity doping. Unanalyzed beam ion implantation was shown to have major cost advantages over analyzed beam implantation. Further, high quality cells were fabricated using a high current unanalyzed beam. Mechanically masked plasma patterning of silicon nitride was shown to be capable of forming fine lines on silicon surfaces with spacings between mask and substrate as great as 250 micrometers. Extensive work was performed on advances in plated metallization. The need for the thick electroless palladium layer was eliminated. Further, copper was successfully utilized as a conductor layer utilizing nickel as a barrier to copper diffusion into the silicon. Plasma etching of silicon for texturing and saw damage removal was shown technically feasible but not cost effective compared to wet chemical etching techniques.

Reactive melt infiltration of silicon-molybdenum alloys into microporous carbon preforms

NASA Technical Reports Server (NTRS)

Singh, M.; Behrendt, D. R.

1995-01-01

Investigations on the reactive melt infiltration of silicon-1.7 and 3.2 at.% molybdenum alloys into microporous carbon preforms have been carried out by modeling, differential thermal analysis (DTA), and melt infiltration experiments. These results indicate that the pore volume fraction of the carbon preform is a very important parameter in determining the final composition of the reaction-formed silicon carbide and the secondary phases. Various undesirable melt infiltration results, e.g. choking-off, specimen cracking, silicon veins, and lake formation, and their correlation with inadequate preform properties are presented. The liquid silicon-carbon reaction exotherm temperatures are influenced by the pore and carbon particle size of the preform and the compositions of infiltrants. Room temperature flexural strength and fracture toughness of materials made by the silicon-3.2 at.% molybdenum alloy infiltration of medium pore size preforms are also discussed.

ZEOLITE-SILICONE RUBBER MIXED MATRIX MEMBRANES: EFFECT OF SILICONE COMPONENT SELECTION ON ETHANOL-WATER PERVAPORATION

EPA Science Inventory

Production of fuel-grade ethanol from renewable resources, such as biomass, is gaining attention due to the phase out of methyl t-butyl ether (MTBE) as a fuel oxygenate, national security issues related to non-domestic sources of fuels, and the effect of fossil fuel combustion on...

All-dielectric metasurface for wavefront control at terahertz frequencies

NASA Astrophysics Data System (ADS)

Dharmavarapu, Raghu; Hock Ng, Soon; Bhattacharya, Shanti; Juodkazis, Saulius

2018-01-01

Recently, metasurfaces have gained popularity due to their ability to offer a spatially varying phase response, low intrinsic losses and high transmittance. Here, we demonstrate numerically and experimentally a silicon meta-surface at THz frequencies that converts a Gaussian beam into a Vortex beam independent of the polarization of the incident beam. The metasurface consists of an array of sub-wavelength silicon cross resonators made of a high refractive index material on substrates such as sapphire and CaF2 that are transparent at IR-THz spectral range. With these substrates, it is possible to create phase elements for a specific spectral range including at the molecular finger printing around 10 μm as well as at longer THz wavelengths where secondary molecular structures can be revealed. This device offers high transmittance and a phase coverage of 0 to 2π. The transmittance phase is tuned by varying the dimensions of the meta-atoms. To demonstrate wavefront engineering, we used a discretized spiraling phase profile to convert the incident Gaussian beam to vortex beam. To realize this, we divided the metasurface surface into eight angular sectors and chose eight different dimensions for the crosses providing successive phase shifts spaced by π/4 radians for each of these sectors. Photolithography and reactive ion etching (RIE) were used to fabricate these silicon crosses as the dimensions of these cylinders range up to few hundreds of micrometers. Large 1-cm-diameter optical elements were successfully fabricated and characterised by optical profilometry.

Structural changes in shock compressed silicon observed using time-resolved x-ray diffraction at the Dynamic Compression Sector

NASA Astrophysics Data System (ADS)

Turneaure, Stefan; Zdanowicz, E.; Sinclair, N.; Graber, T.; Gupta, Y. M.

2015-06-01

Structural changes in shock compressed silicon were observed directly using time-resolved x-ray diffraction (XRD) measurements at the Dynamic Compression Sector at the Advanced Photon Source. The silicon samples were impacted by polycarbonate impactors accelerated to velocities greater than 5 km/s using a two-stage light gas gun resulting in impact stresses of about 25 GPa. The 23.5 keV synchrotron x-ray beam passed through the polycarbonate impactor, the silicon sample, and an x-ray window (polycarbonate or LiF) at an angle of 30 degrees relative to the impact plane. Four XRD frames (~ 100 ps snapshots) were obtained with 153.4 ns between frames near the time of impact. The XRD measurements indicate that in the peak shocked state, the silicon samples completely transformed to a high-pressure phase. XRD results for both shocked polycrystalline silicon and single crystal silicon will be presented and compared. Work supported by DOE/NNSA.

Vertically Integrated MEMS SOI Composite Porous Silicon-Crystalline Silicon Cantilever-Array Sensors: Concept for Continuous Sensing of Explosives and Warfare Agents

NASA Astrophysics Data System (ADS)

Stolyarova, Sara; Shemesh, Ariel; Aharon, Oren; Cohen, Omer; Gal, Lior; Eichen, Yoav; Nemirovsky, Yael

This study focuses on arrays of cantilevers made of crystalline silicon (c-Si), using SOI wafers as the starting material and using bulk micromachining. The arrays are subsequently transformed into composite porous silicon-crystalline silicon cantilevers, using a unique vapor phase process tailored for providing a thin surface layer of porous silicon on one side only. This results in asymmetric cantilever arrays, with one side providing nano-structured porous large surface, which can be further coated with polymers, thus providing additional sensing capabilities and enhanced sensing. The c-Si cantilevers are vertically integrated with a bottom silicon die with electrodes allowing electrostatic actuation. Flip Chip bonding is used for the vertical integration. The readout is provided by a sensitive Capacitance to Digital Converter. The fabrication, processing and characterization results are reported. The reported study is aimed towards achieving miniature cantilever chips with integrated readout for sensing explosives and chemical warfare agents in the field.

Surface normal coupling to multiple-slot and cover-slotted silicon nanocrystalline waveguides and ring resonators

NASA Astrophysics Data System (ADS)

Covey, John; Chen, Ray T.

2014-03-01

Grating couplers are ideal for coupling into the tightly confined propagation modes of semiconductor waveguides. In addition, nonlinear optics has benefited from the sub-diffraction limit confinement of horizontal slot waveguides. By combining these two advancements, slot-based nonlinear optics with mode areas less than 0.02 μm2 can become as routine as twisting fiber connectors together. Surface normal fiber alignment to a chip is also highly desirable from time, cost, and manufacturing considerations. To meet these considerable design challenges, a custom genetic algorithm is created which, starting from purely random designs, creates a unique four stage grating coupler for two novel horizontal slot waveguide platforms. For horizontal multiple-slot waveguides filled with silicon nanocrystal, a theoretical fiber-towaveguide coupling efficiency of 68% is obtained. For thin silicon waveguides clad with optically active silicon nanocrystal, known as cover-slot waveguides, a theoretical fiber-to-waveguide coupling efficiency of 47% is obtained, and 1 dB and 3 dB theoretical bandwidths of 70 nm and 150 nm are obtained, respectively. Both waveguide platforms are fabricated from scratch, and their respective on-chip grating couplers are experimentally measured from a standard single mode fiber array that is mounted surface normally. The horizontal multiple-slot grating coupler achieved an experimental 60% coupling efficiency, and the horizontal cover-slot grating coupler achieved an experimental 38.7% coupling efficiency, with an extrapolated 1 dB bandwidth of 66 nm. This report demonstrates the promise of genetic algorithm-based design by reducing to practice the first large bandwidth vertical grating coupler to a novel silicon nanocrystal horizontal cover-slot waveguide.

Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Lieb, K. P.; Bibić, N.

2014-03-01

The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 °C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 °C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 °C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 °C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 °C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model.

Process feasibility study in support of silicon material task 1

NASA Technical Reports Server (NTRS)

Li, K. Y.; Hansen, K. C.; Yaws, C. L.

1978-01-01

Process system properties are analyzed for materials involved in the alternate processes under consideration for solar cell grade silicon. The following property data are reported for trichlorosilane: critical constants, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation, and Gibb's free energy of formation. Work continued on the measurement of gas viscosity values of silicon source materials. Gas phase viscosity values for silicon tetrafluoride between 40 C and 200 C were experimentally determined. Major efforts were expended on completion of the preliminary economic analysis of the silane process. Cost, sensitivity and profitability analysis results are presented based on a preliminary process design of a plant to produce 1,000 metric tons/year of silicon by the revised process.

APTES-Terminated ultrasmall and iron-doped silicon nanoparticles as X-Ray dose enhancer for radiation therapy.

PubMed

Klein, Stefanie; Wegmann, Marc; Distel, Luitpold V R; Neuhuber, Winfried; Kryschi, Carola

2018-04-15

Silicon nanoparticles with sizes between were synthesized through wet-chemistry procedures using diverse phase transfer reagents. On the other hand, the preparation of iron-doped silicon nanoparticles was carried out using the precursor Na 4 Si 4 containing 5% Fe. Biocompatibility of all silicon nanoparticle samples was achieved by surface-stabilizing with (3-aminopropyl)triethoxysilane. These surface structures provided positive surface charges which facilitated electrostatic binding to the negatively charged biological membranes. The mode of interaction with membranes, being either incorporation or just attachment, was found to depend on the nanoparticle size. The smallest silicon nanoparticles (ca. 1.5 nm) were embedded in the mitochondrial membrane in MCF-7 cells. When interacting with X-rays these silicon nanoparticles were observed to enhance the superoxide formation upon depolarizing the mitochondrial membrane. X-ray irradiation of MCF-7 cells loaded with the larger silicon nanoparticles was shown to increase the intracellular singlet oxygen generation. The doping of the silicon nanoparticles with iron led to additional production of hydroxyl radicals via the Fenton reaction. Copyright © 2018 Elsevier Inc. All rights reserved.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2004-12-07

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2005-08-23

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2003-01-01

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Yunshan; DeVore, Peter T. S.; Jalali, Bahram

Optical computing accelerators help alleviate bandwidth and power consumption bottlenecks in electronics. In this paper, we show an approach to implementing logarithmic-type analog co-processors in silicon photonics and use it to perform the exponentiation operation and the recovery of a signal in the presence of multiplicative distortion. Finally, the function is realized by exploiting nonlinear-absorption-enhanced Raman amplification saturation in a silicon waveguide.

Infrared bolometers with silicon nitride micromesh absorbers

NASA Technical Reports Server (NTRS)

Bock, J. J.; Turner, A. D.; DelCastillo, H. M.; Beeman, J. W.; Lange, A. E.; Mauskopf, P. D.

1996-01-01

Sensitive far infrared and millimeter wave bolometers fabricated from a freestanding membrane of low stress silicon nitride are reported. The absorber, consisting of a metallized silicon nitride micromesh thermally isolated by radial legs of silicon nitride, is placed in an integrating cavity to efficiently couple to single mode or multiple mode infrared radiation. This structure provides low heat capacity, low thermal conduction and minimal cross section to energetic particles. A neutron transmutation doped Ge thermister is bump bonded to the center of the device and read out with evaporated Cr-Au leads. The limiting performance of the micromesh absorber is discussed and the recent results obtained from a 300 mK cold stage are summarized.

Fine tuning of the dichroic behavior of Bragg reflectors based on anisotropically nanostructured silicon

NASA Astrophysics Data System (ADS)

Diener, J.; Künzner, N.; Kovalev, D.; Gross, E.; Koch, F.; Fujii, M.

2003-05-01

Electro-chemical etching of heavily doped, (110) oriented, p+ (boron) doped silicon wafers results in porous silicon (PSi) layers which exhibit a strong in-plane anisotropy of the refractive index (birefringence). Single- and multiple layers of anisotropically nanostructured silicon (Si) have been fabricated and studied by polarization-resolved reflection and transmission measurements. Dielectric stacks of birefringent PSi acting as distributed Bragg reflectors have two distinct reflection bands depending on the polarization of the incident linearly polarized light. This effect is caused by a three-dimensional (in plane and in-depth) variation of the refraction index. The possibility of fine tuning the two orthogonally polarized reflection bands and their spectral splitting is demonstrated.

Two-dimensional optical phased array antenna on silicon-on-insulator.

PubMed

Van Acoleyen, Karel; Rogier, Hendrik; Baets, Roel

2010-06-21

Optical wireless links can offer a very large bandwidth and can act as a complementary technology to radiofrequency links. Optical components nowadays are however rather bulky. Therefore, we have investigated the potential of silicon photonics to fabricated integrated components for wireless optical communication. This paper presents a two-dimensional phased array antenna consisting of grating couplers that couple light off-chip. Wavelength steering of $0.24 degrees /nm is presented reducing the need of active phase modulators. The needed steering range is $1.5 degrees . The 3dB angular coverage range of these antennas is about $0.007pi sr with a directivity of more than 38dBi and antenna losses smaller than 3dB.

Improved toughness of refractory compounds. [with elimination of the grain boundary phase

NASA Technical Reports Server (NTRS)

Wright, T. R.; Niesz, D. E.

1974-01-01

The concept of grain-boundary-engineering through elimination of the grain-boundary silicate phase in silicon nitride was developed. The process involved removal of the silica from the nitride powder via a thermal treatment coupled with the use of nitride additives to compensate the remaining oxygen. Magnesium and aluminum nitrides are found to be the most effective additive for use as oxygen compensators. Strength decreases at elevated temperatures are not observed in the alumina containing material. The creep rate of a dual additive sialon composition was two orders of magnitude lower at 1400 C than commercial silicon nitride. A cursory analysis of the creep mechanism indicate that grain-boundary sliding is avoided through elimination of the grain-boundary silicate phase.

SBIR Phase I final report, Sensor for direct, rapid and complete elemental analysis of coal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Chunyi

This Final Report is the result of the DOE SBIR Phase I assistance agreement No: DE-FOA-0001619 awarded to Applied Spectra, Inc. During the nine-month Phase I effort, we successfully demonstrated the ability to quantify rare-earth elements (REE) in coal using LIBS (Laser Induced Breakdown Spectroscopy) along with other elements of interest such as silicon (Si), aluminum (Al), magnesium (Mg), calcium (Ca), potassium (K), titanium (Ti) and iron (Fe). In addition to elemental quantification, eighteen different coal types could be classified with 100% certainty using their LIBS spectrum. High-resolution LA-ICP-MS surface mapping showed a correlation between REE and other prevalent elementsmore » such as aluminum, silicon, and titanium.« less

Pressure atomizer having multiple orifices and turbulent generation feature

DOEpatents

VanBrocklin, Paul G.; Geiger, Gail E.; Moran, Donald James; Fournier, Stephane

2002-01-01

A pressure atomizer includes a silicon plate having a top surface and a bottom surface. A portion of the top surface defines a turbulent chamber. The turbulent chamber is peripherally bounded by the top surface of the plate. The turbulent chamber is recessed a predetermined depth relative to the top surface. The silicon plate further defines at least one flow orifice. Each flow orifice extends from the bottom surface of the silicon plate to intersect with and open into the turbulent chamber. Each flow orifice is in fluid communication with the turbulent chamber.

Linguine sign at MR imaging: does it represent the collapsed silicone implant shell?

PubMed

Gorczyca, D P; DeBruhl, N D; Mund, D F; Bassett, L W

1994-05-01

One intact and one ruptured single-lumen implant were surgically placed in a rabbit. Magnetic resonance (MR) imaging was performed before and after surgical removal, and the ruptured implant was imaged after removal of the implant shell. Multiple curvilinear hypointense lines (linguine sign) were present in the MR images of the ruptured implant and of the implant shell alone immersed in saline solution but not in the image of the free silicone. The collapsed implant shell in a ruptured silicone implant does cause the linguine sign.

Nano-multiplication region avalanche photodiodes and arrays

NASA Technical Reports Server (NTRS)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

2011-01-01

An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

Development of low cost contacts to silicon solar cells

NASA Technical Reports Server (NTRS)

Tanner, D. P.

1980-01-01

The results of the second phase of the program of developing low cost contacts to silicon solar cells using copper are presented. Phase 1 yielded the development of a plated Pd-Cr-Cu contact system. This process produced cells with shunting problems when they were heated to 400 C for 5 minutes. Means of stopping the identified copper diffusion which caused the shunting were investigated. A contact heat treatment study was conducted with Pd-Ag, Ci-Ag, Pd-Cu, Cu-Cr, and Ci-Ni-Cu. Nickel is shown to be an effective diffusion barrier to copper.

Track reconstruction for the Mu3e experiment based on a novel Multiple Scattering fit

NASA Astrophysics Data System (ADS)

Kozlinskiy, Alexandr

2017-08-01

The Mu3e experiment is designed to search for the lepton flavor violating decay μ+ → e+e+e-. The aim of the experiment is to reach a branching ratio sensitivity of 10-16. In a first phase the experiment will be performed at an existing beam line at the Paul-Scherrer Institute (Switzerland) providing 108 muons per second, which will allow to reach a sensitivity of 2 · 10-15. The muons with a momentum of about 28 MeV/c are stopped and decay at rest on a target. The decay products (positrons and electrons) with energies below 53MeV are measured by a tracking detector consisting of two double layers of 50 μm thin silicon pixel sensors. The high granularity of the pixel detector with a pixel size of 80 μm × 80 μm allows for a precise track reconstruction in the high multiplicity environment of the Mu3e experiment, reaching 100 tracks per reconstruction frame of 50 ns in the final phase of the experiment. To deal with such high rates and combinatorics, the Mu3e track reconstruction uses a novel fit algorithm that in the simplest case takes into account only the multiple scattering, which allows for a fast online tracking on a GPU based filter farm. An implementation of the 3-dimensional multiple scattering fit based on hit triplets is described. The extension of the fit that takes into account energy losses and pixel size is used for offline track reconstruction. The algorithm and performance of the offline track reconstruction based on a full Geant4 simulation of the Mu3e detector are presented.

Thermal conversion of an iron nitride-silicon nitride precursor into a ferromagnetic nanocomposite

NASA Astrophysics Data System (ADS)

Maya, L.; Thompson, J. R.; Song, K. J.; Warmack, R. J.

1998-01-01

Iron nitride films, FeN, in a pure form and in the form of a nanocomposite in silicon nitride were prepared by reactive sputtering using iron or iron disilicide, respectively, as targets in a nitrogen plasma. Iron nitride decomposes into the elements by heating in vacuum to 800 °C. Intermediate phases such as Fe2N or Fe4N form at lower temperatures. The nanocomposites contain the iron phases as particles with an average size of ˜5 nm dispersed in the amorphous silicon nitride matrix. The magnetic properties of the nanocomposites were established. The precursor FeN-Si3N4 film is paramagnetic, while the Fe-Si3N4, obtained by heating in vacuum, is ferromagnetic and shows typical superparamagnetic behavior. These films are of interest as recording media with superior chemical and mechanical stability and may be encoded by localized heating.

Effect of the substrate on the insulator-metal transition of vanadium dioxide films

NASA Astrophysics Data System (ADS)

Kovács, György J.; Bürger, Danilo; Skorupa, Ilona; Reuther, Helfried; Heller, René; Schmidt, Heidemarie

2011-03-01

Single-phase vanadium dioxide films grown on (0001) sapphire and (001) silicon substrates show a very different insulator-metal electronic transition. A detailed description of the growth mechanisms and the substrate-film interaction is given, and the characteristics of the electronic transition are described by the morphology and grain boundary structure. (Tri-)epitaxy-stabilized columnar growth of VO2 takes place on the sapphire substrate, whereas on silicon the expected Zone II growth is identified. We have found that in the case of the Si substrate the reasons for the broader hysteresis and the lower switching amplitude are the formation of an amorphous insulating VOx (x > 2.6) phase coexisting with VO2 and the high vanadium vacancy concentration of the VO2. These phenomena are the result of the excess oxygen during the growth and the interaction between the silicon substrate and the growing film.

Sintering and microstructure of silicon carbide ceramic with Y3Al5O12 added by sol-gel method*

PubMed Central

Guo, Xing-zhong; Yang, Hui

2005-01-01

Silicon carbide (SiC) ceramic with YAG (Y3Al5O12) additive added by sol-gel method was liquid-phase sintered at different sintering temperatures, and the sintering mechanism and microstructural characteristics of resulting silicon carbide ceramics were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and elemental distribution of surface (EDS). YAG (yttrium aluminum garnet) phase formed before the sintering and its uniform distribution in the SiC/YAG composite powder decreased the sintering temperature and improved the densification of SiC ceramic. The suitable sintering temperature was 1860 °C with the specimen sintered at this temperature having superior sintering and mechanical properties, smaller crystal size and fewer microstructure defects. Three characteristics of improved toughness of SiC ceramic with YAG added by sol-gel method were microstructural densification, main-crack deflection and crystal ‘bridging’. PMID:15682507

Arsenic silicide formation by oxidation of arsenic implanted silicon

NASA Astrophysics Data System (ADS)

Hagmann, D.; Euen, W.; Schorer, G.; Metzger, G.

1989-07-01

Wet oxidations of (100) silicon implanted with an arsenic dose of 2 × 1016 cm-2 and an energy of 30 keV were carried out in the temperature range between 600 and 900° C. The oxidation rate is increased on the arsenic implanted samples up to a factor of 2000 as compared to undoped samples. During these oxidations the arsenic suicide phase AsSi is precipitated at the oxide/silicon interface. After short oxidation times at 600° C, a continuous AsSi layer is found. It is dissolved during extended oxidation times and finally almost all As is incorporated in the oxide. After 900° C oxidations, substantial AsSi crystallites remain at the Si/SiO2 interface. They are still observed up to the larg-est oxide thickness grown (2.3 µm). The AsSi phase and the distribution of the im-planted arsenic were analyzed by TEM, SIMS and XRF measurements.

Electron microscopy study of Ni induced crystallization in amorphous Si thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radnóczi, G. Z.; Battistig, G.; Pécz, B., E-mail: pecz.bela@ttk.mta.hu

2015-02-17

The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi{sub 2} phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi{sub 2} grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a secondmore » region is also observed with large grains of Ni{sub 3}Si{sub 2}. Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization.« less

Nanoscale doping of compound semiconductors by solid phase dopant diffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Jaehyun, E-mail: jaehyun.ahn@utexas.edu; Koh, Donghyi; Roy, Anupam

2016-03-21

Achieving damage-free, uniform, abrupt, ultra-shallow junctions while simultaneously controlling the doping concentration on the nanoscale is an ongoing challenge to the scaling down of electronic device dimensions. Here, we demonstrate a simple method of effectively doping ΙΙΙ-V compound semiconductors, specifically InGaAs, by a solid phase doping source. This method is based on the in-diffusion of oxygen and/or silicon from a deposited non-stoichiometric silicon dioxide (SiO{sub x}) film on InGaAs, which then acts as donors upon activation by annealing. The dopant profile and concentration can be controlled by the deposited film thickness and thermal annealing parameters, giving active carrier concentration ofmore » 1.4 × 10{sup 18 }cm{sup −3}. Our results also indicate that conventional silicon based processes must be carefully reviewed for compound semiconductor device fabrication to prevent unintended doping.« less

Monosilicide-disilicide-silicon phase equilibria in the nickel-platinum-silicon and nickel-palladium-silicon systems

NASA Astrophysics Data System (ADS)

Loomans, M. E.; Chi, D. Z.; Chua, S. J.

2004-10-01

Bulk-phase equilibria in Ni-rich/Si-rich alloys of the Ni-Pt-Si and Ni-Pd-Si systems were investigated. Results suggest that a bulk monosilicide solid solution, containing up to at least 11 at. pct Pt, exists in the Ni-Pt-Si system. Monosilicides containing more than 11 at. pct Pt were not examined. Results from both ternary systems point convincingly to the existence of a NiSi+Si↔NiSi2 eutectoid reaction near 700 °C in the Ni-Si binary system; data from the Ni-Pt-Si system, which yield the more accurate determination of the eutectoid temperature, place it at roughly 710 °C. The Pt and Pd concentrations of monosilicide in equilibrium with disilicide and Si were measured using energy-dispersive spectrometry (EDS) and were found to increase with temperature.

Bulk nucleation and growth of inorganic nanowires and nanotubes

NASA Astrophysics Data System (ADS)

Sharma, Shashank

The nanometer scale materials such as nanowires and nanotubes will be of particular interest as building blocks for designing novel sensors, catalysts, electronic, optical, and optoelectronic devices. However, in order to realize these applications, bulk amounts of nanowires and nanotubes need to be synthesized with precise control over the nanostructure characteristics. In addition, the structure-property relationships for one-dimensional structures are expected to be different than their bulk when their diameters are less than a characteristic Bohr exciton radius. This fundamental curiosity also necessitates bulk synthesis of nanostructures. The current bulk nanowire synthesis methods utilize either nanometer scale porous molds or nanometer scale transition metal clusters to template one-dimensional growth. All these techniques have inherent limitations in terms of control over the nanowire diameter distribution, composition, the growth direction, and the ability to generate abrupt interfaces within individual nanowires. In this dissertation, a new concept for bulk nucleation and growth of one-dimensional nanostructures is proposed and demonstrated for a variety of inorganic material systems. In this technique, multiple nanowires nucleate and grow from pools of low-melting metal melts when exposed to an activated gas phase containing the necessary precursors. This concept, hereby termed Low Melting Metals and Activated Gas phase (LMAG) mediated method, is specifically demonstrated for the synthesis of, (a) silicon nanowires grown using molten gallium and silane precursors; (b) silicon compound nanowires using solution of molten gallium and appropriate gas phase precursors, and (c) metal-oxide nanostructures grown using direct reaction of the respective metal melts and oxygen precursors. Nanowires resulted from the same molten gallium pool at high densities (>1011/cm2) and with narrow diameter distribution. The silicon nanowires synthesized using the LMAG technique were single crystalline, defect free, and contained a non uniform, extremely thin oxide sheath (<1.5 nm). The nanowire diameter could be varied from 3 to 100 nm, with lengths up to hundreds of microns. Unique tubular and paintbrush-like morphologies were obtained in gallium oxide (Ga2O3) nanostructures. Small gallium droplets (<100 nm size) allowed Ga2O3 nanowire growth parallel to the substrate, followed by 2-dimensional nanoweb formation. These experiments using small gallium droplets resulted in the growth of crystalline Ga2O3 nanotubes with outer diameters as small as 5 nm and inner diameters as small as 2.5 nm.

Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.

PubMed

Kim, Gyungock; Park, Jeong Woo; Kim, In Gyoo; Kim, Sanghoon; Kim, Sanggi; Lee, Jong Moo; Park, Gun Sik; Joo, Jiho; Jang, Ki-Seok; Oh, Jin Hyuk; Kim, Sun Ae; Kim, Jong Hoon; Lee, Jun Young; Park, Jong Moon; Kim, Do-Won; Jeong, Deog-Kyoon; Hwang, Moon-Sang; Kim, Jeong-Kyoum; Park, Kyu-Sang; Chi, Han-Kyu; Kim, Hyun-Chang; Kim, Dong-Wook; Cho, Mu Hee

2011-12-19

We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13μm CMOS interface IC chips were hybrid-integrated.

Microstructural evolution of neutron-irradiated Ni-Si and Ni-Al alloys

NASA Astrophysics Data System (ADS)

Takahashi, H.; Garner, F. A.

1992-10-01

Additions of silicon and aluminum suppress the neutron-induced swelling of pure nickel but to different degrees. Silicon is much more effective initially when compared to aluminum on a per atom basis but silicon exhibits a nonmonotonic influence on swelling with increasing concentration. Silicon tends to segregate toward grain boundaries while aluminum segregates away from these boundaries. Whereas the formation of the Ni 3Si phase is frequently observed in charged particle irradiation experiments conducted at much higher displacement rates, it did not occur during neutron irradiation in this study. Precipitation also did not occur in Ni-5Al during neutron irradiation, nor has it been reported to occur during ion irradiation.

Supercontinuum generation in silicon waveguides relying on wave-breaking.

PubMed

Castelló-Lurbe, David; Silvestre, Enrique

2015-10-05

Four-wave-mixing processes enabled during optical wave-breaking (OWB) are exploited in this paper for supercontinuum generation. Unlike conventional approaches based on OWB, phase-matching is achieved here for these nonlinear interactions, and, consequently, new frequency production becomes more efficient. We take advantage of this kind of pulse propagation to obtain numerically a coherent octave-spanning mid-infrared supercontinuum generation in a silicon waveguide pumping at telecom wavelengths in the normal dispersion regime. This scheme shows a feasible path to overcome limits imposed by two-photon absorption on spectral broadening in silicon waveguides.

LiBSi2: a tetrahedral semiconductor framework from boron and silicon atoms bearing lithium atoms in the channels.

PubMed

Zeilinger, Michael; van Wüllen, Leo; Benson, Daryn; Kranak, Verina F; Konar, Sumit; Fässler, Thomas F; Häussermann, Ulrich

2013-06-03

Silicon swallows up boron: The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi2 was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels (see picture). LiBSi2 is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts.

Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications.

PubMed

Roussel, M; Talbot, E; Pratibha Nalini, R; Gourbilleau, F; Pareige, P

2013-09-01

Due to the quantum confinement, silicon nanoclusters (Si-ncs) embedded in a dielectric matrix are of prime interest for new optoelectronics and microelectronics applications. In this context, SiO(x)/SiO₂ multilayers have been prepared by magnetron sputtering and subsequently annealed to induce phase separation and Si clusters growth. The aim of this paper is to study phase separation processes and formation of nanoclusters in SiO(x)/SiO₂ multilayers by atom probe tomography. Influences of the silicon supersaturation, annealing temperature and SiO(x) and SiO₂ layer thicknesses on the final microstructure have been investigated. It is shown that supersaturation directly determines phase separation regime between nucleation/classical growth and spinodal decomposition. Annealing temperature controls size of the particles and interface with the surrounding matrix. Layer thicknesses directly control Si-nc shapes from spherical to spinodal-like structures. Copyright © 2012 Elsevier B.V. All rights reserved.

Thin film characterization by laser interferometry combined with SIMS

NASA Astrophysics Data System (ADS)

Kempf, J.; Nonnenmacher, M.; Wagner, H. H.

1988-10-01

Thin film properties of technologically important materials (Si, GaAs, SiO2, WSix) have been measured by using a novel technique that combines secondary ion mass spectrometry (SIMS) and laser interferometry. The simultaneous measurement of optical phase and reflectance as well as SIMS species during ion sputtering yielded optical constants, sputtering rates and composition of thin films with high depth resolution. A model based on the principle of multiple reflection within a multilayer structure, which considered also transformation of the film composition in depth and time during sputtering, was fitted to the reflectance and phase data. This model was applied to reveal the transformation of silicon by sputtering with O{2/+} ions. Special attention was paid to the preequilibrium phase of the sputter process (amorphization, oxidation, and volume expansion). To demonstrate the analytical potential of our method the multilayer system WSix/poly-Si/SiO2/Si was investigated. The physical parameters and the stoichiometry of tungsten suicide were determined for annealed as well as deposited films. A highly sensitive technique that makes use of a Fabry-Perot etalon integrated with a Michelson type interferometer is proposed. This two-stage interferometer has the potential to profile a sample surface with subangstroem resolution.

Biodegradable porous silicon barcode nanowires with defined geometry

PubMed Central

Chiappini, Ciro; Liu, Xuewu; Fakhoury, Jean Raymond; Ferrari, Mauro

2010-01-01

Silicon nanowires are of proven importance in diverse fields such as energy production and storage, flexible electronics, and biomedicine due to the unique characteristics emerging from their one-dimensional semiconducting nature and their mechanical properties. Here we report the synthesis of biodegradable porous silicon barcode nanowires by metal assisted electroless etch of single crystal silicon with resistivity ranging from 0.0008 Ω-cm to 10 Ω-cm. We define the geometry of the barcode nanowiresby nanolithography and we characterize their multicolor reflectance and photoluminescence. We develop phase diagrams for the different nanostructures obtained as a function of metal catalyst, H2O2 concentration, ethanol concentration and silicon resistivity, and propose a mechanism that explains these observations. We demonstrate that these nanowires are biodegradable, and their degradation time can be modulated by surface treatments. PMID:21057669

Direct-patterned optical waveguides on amorphous silicon films

DOEpatents

Vernon, Steve; Bond, Tiziana C.; Bond, Steven W.; Pocha, Michael D.; Hau-Riege, Stefan

2005-08-02

An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiO.sub.2 substrate, a Si film and an SiO.sub.2 film, the formation of guided wave structures is particularly simple.

Catalyst for microelectromechanical systems microreactors

DOEpatents

Morse, Jeffrey D [Martinez, CA; Sopchak, David A [Livermore, CA; Upadhye, Ravindra S [Pleasanton, CA; Reynolds, John G [San Ramon, CA; Satcher, Joseph H [Patterson, CA; Gash, Alex E [Brentwood, CA

2010-06-29

A microreactor comprising a silicon wafer, a multiplicity of microchannels in the silicon wafer, and a catalyst coating the microchannels. In one embodiment the catalyst coating the microchannels comprises a nanostructured material. In another embodiment the catalyst coating the microchannels comprises an aerogel. In another embodiment the catalyst coating the microchannels comprises a solgel. In another embodiment the catalyst coating the microchannels comprises carbon nanotubes.

Catalyst for microelectromechanical systems microreactors

DOEpatents

Morse, Jeffrey D [Martinez, CA; Sopchak, David A [Livermore, CA; Upadhye, Ravindra S [Pleasanton, CA; Reynolds, John G [San Ramon, CA; Satcher, Joseph H [Patterson, CA; Gash, Alex E [Brentwood, CA

2011-11-15

A microreactor comprising a silicon wafer, a multiplicity of microchannels in the silicon wafer, and a catalyst coating the microchannels. In one embodiment the catalyst coating the microchannels comprises a nanostructured material. In another embodiment the catalyst coating the microchannels comprises an aerogel. In another embodiment the catalyst coating the microchannels comprises a solgel. In another embodiment the catalyst coating the microchannels comprises carbon nanotubes.

Ingot slicing machine and method

NASA Technical Reports Server (NTRS)

Kuo, Y. S. (Inventor)

1984-01-01

An improved method for simultaneously slicing one or a multiplicity of boules of silicon into silicon wafers is described. A plurality of vertical stacks of horizontal saw blades of circular configuration are arranged in juxtaposed coaxial alignment. Each blade is characterized by having a cutting diameter slightly greater than the cutting diameter of the blade arranged immediately above, imparting a simultaneous rotation to the blades.

Effect of Silicon on Desulfurization of Aluminum-killed Steels

NASA Astrophysics Data System (ADS)

Roy, Debdutta

Recent reports have suggested that silicon has a beneficial effect on the rate of desulfurization of Al-killed steel. This effect is difficult to understand looking at the overall desulfurization reaction which does not include silicon. However an explanation is proposed by taking into account the (SiO2)/[Si] equilibrium in which some Al reaching the slag-metal interface is used in reducing the SiO2 in the slag. This reaction can be suppressed to some extent if the silicon content of the metal is increased and in doing so, more Al will be available at the slag-metal interface for the desulfurization reaction and this would increase the rate of the desulfurization reaction. A model was developed, assuming the rates are controlled by mass transfer, taking into account the coupled reactions of the reduction of silica, and other unstable oxides, namely iron oxide and manganese oxide, in the slag and desulfurization reaction in the steel by aluminum. The model predicts that increasing silicon increases the rate and extent of desulfurization. Plant data was analyzed to obtain rough estimates of ladle desulfurization rates and also used to validate the model predictions. Experiments have been conducted on a kilogram scale of material in an induction furnace to test the hypothesis. The major conclusions of the study are as follows: The rate and extent of desulfurization improve with increasing initial silicon content in the steel; the effect diminishes at silicon contents higher than approximately 0.2% and with increasing slag basicity. This was confirmed with kilogram-scale laboratory experiments. The effects of the silicon content in the steel (and of initial FeO and MnO in the slag) largely arise from the dominant effects of these reactions on the equilibrium aluminum content of the steel: as far as aluminum consumption or pick-up is concerned, the Si/SiO2 reaction dominates, and desulfurization has only a minor effect on aluminum consumption. The rate is primarily controlled by mass transfer in the metal and slag phase mass transfer has a minor effect on the overall desulfurization kinetics. The model results are in agreement with the experimental data for the change in sulfur, silicon and aluminum contents with time which renders credibility to the underlying hypothesis of the kinetic model. Although the change of sulfur content with time is not very sensitive to the activity data source, the change of aluminum and silicon contents with time depend on the activity data source. The experimental results demonstrate that if the silicon content in the steel is high enough, the silicon can reduce the alumina from the slag and thus the steel melt will pick up aluminum. This can cause significant savings in aluminum consumption. For most of the slag compositions used in the experiments, the overall mass transfer is only limited by the steel phase and the slag phase mass transfer can be neglected for most practical cases. Mass balance calculations in the experiments support the basis of the model and also show that with respect to aluminum consumption, silica reduction is the main aluminum consuming (or production) reaction and the desulfurization reaction is only a secondary consumer of aluminum. Results from the plant trials conducted to test the effect of silicon on ladle desulfurization show that the rate and extent of desulfurization increase with the increase of the initial Si content, so in the ladle refining process, adding all the silicon in the beginning with the aluminum and the fluxes will be beneficial and could save considerable processing time at the ladle. The aluminum consumption for the heats with silicon added in the beginning (both in terms of the Al added to the steel and as slag deoxidants) is considerably lower compared to the cases where the silicon is added at the end. However, on a relative cost term, aluminum and silicon are similarly priced so substitution would not offer a major cost advantage.

Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates

NASA Astrophysics Data System (ADS)

Grimberg, I.; Weiss, B. Z.

1995-04-01

The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4-2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed.

A new combined green method for 2-Chlorophenol removal using cross-linked Brassica rapa peroxidase in silicone oil.

PubMed

Tandjaoui, Nassima; Abouseoud, Mahmoud; Couvert, Annabelle; Amrane, Abdeltif; Tassist, Amina

2016-04-01

This study proposes a new technique to treat waste air containing 2-Chlorophenol (2-CP), namely an integrated process coupling absorption of the compound in an organic liquid phase and its enzymatic degradation. Silicone oil (47V20) was used as an organic absorbent to allow the volatile organic compound (VOC) transfer from the gas phase to the liquid phase followed by its degradation by means of Cross-linked Brassica rapa peroxidase (BRP) contained in the organic phase. An evaluation of silicone oil (47V20) absorption capacity towards 2-CP was first accomplished by determining its partition coefficient (H) in this solvent. The air-oil partition coefficient of 2-CP was found equal to 0.136 Pa m(3) mol(-1), which is five times lower than the air-water value (0.619 Pam(3) mol(-1)). The absorbed 2-CP was then subject to enzymatic degradation by cross-linked BRP aggregates (BRP-CLEAs). The degradation step was affected by four parameters (contact time; 2-CP, hydrogen peroxide and enzyme concentrations), which were optimized in order to obtain the highest conversion yield. A maximal conversion yield of 69% and a rate of 1.58 mg L(-1) min(-1)were obtained for 100 min duration time when 2-CP and hydrogen peroxide concentrations were respectively 80 mg L(-1) and 6 mM in the presence of 2.66 UI mL(-1) BRP-CLEAs. The reusability of BRP-CLEAs in silicone oil was assessed, showing promising results since 59% of their initial efficiency remained after three batches. Copyright © 2016 Elsevier Ltd. All rights reserved.

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

NASA Astrophysics Data System (ADS)

García, H.; Castán, H.; Dueñas, S.; García-Hemme, E.; García-Hernansaz, R.; Montero, D.; González-Díaz, G.

2018-03-01

Intermediate-band semiconductors have attracted much attention for use in silicon-based solar cells and infrared detectors. In this work, n-Si substrates have been implanted with very high doses (1013 cm-2 and 1014 cm-2) of vanadium, which gives rise to a supersaturated layer inside the semiconductor. However, the Mott limit was not exceeded. The energy levels created in the supersaturated silicon were studied in detail by means of thermal admittance spectroscopy. We found a single deep center at energy near E C - 200 meV. This value agrees with one of the levels found for vanadium in silicon. The capture cross-section values of the deep levels were also calculated, and we found a relationship between the capture cross-section and the energy position of the deep levels which follows the Meyer-Neldel rule. This process usually appears in processes involving multiple excitations. The Meyer-Neldel energy values agree with those previously obtained for silicon supersaturated with titanium and for silicon contaminated with iron.

Electrochemical ion transfer across liquid/liquid interfaces confined within solid-state micropore arrays--simulations and experiments.

PubMed

Strutwolf, Jörg; Scanlon, Micheál D; Arrigan, Damien W M

2009-01-01

Miniaturised liquid/liquid interfaces provide benefits for bioanalytical detection with electrochemical methods. In this work, microporous silicon membranes which can be used for interface miniaturisation were characterized by simulations and experiments. The microporous membranes possessed hexagonal arrays of pores with radii between 10 and 25 microm, a pore depth of 100 microm and pore centre-to-centre separations between 99 and 986 microm. Cyclic voltammetry was used to monitor ion transfer across arrays of micro-interfaces between two immiscible electrolyte solutions (microITIES) formed at these membranes, with the organic phase present as an organogel. The results were compared to computational simulations taking into account mass transport by diffusion and encompassing diffusion to recessed interfaces and overlapped diffusion zones. The simulation and experimental data were both consistent with the situation where the location of the liquid/liquid (l/l) interface was on the aqueous side of the silicon membrane and the pores were filled with the organic phase. While the current for the forward potential scan (transfer of the ion from the aqueous phase to the organic phase) was strongly dependent on the location of the l/l interface, the current peak during the reverse scan (transfer of the ion from the organic phase to the aqueous phase) was influenced by the ratio of the transferring ion's diffusion coefficients in both phases. The diffusion coefficient of the transferring ion in the gelified organic phase was ca. nine times smaller than in the aqueous phase. Asymmetric cyclic voltammogram shapes were caused by the combined effect of non-symmetrical diffusion (spherical and linear) and by the inequality of the diffusion coefficient in both phases. Overlapping diffusion zones were responsible for the observation of current peaks instead of steady-state currents during the forward scan. The characterisation of the diffusion behaviour is an important requirement for application of these silicon membranes in electroanalytical chemistry.

50-GHz-spaced comb of high-dimensional frequency-bin entangled photons from an on-chip silicon nitride microresonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Imany, Poolad; Jaramillo-Villegas, Jose A.; Odele, Ogaga D.

Quantum frequency combs from chip-scale integrated sources are promising candidates for scalable and robust quantum information processing (QIP). However, to use these quantum combs for frequency domain QIP, demonstration of entanglement in the frequency basis, showing that the entangled photons are in a coherent superposition of multiple frequency bins, is required. We present a verification of qubit and qutrit frequency-bin entanglement using an on-chip quantum frequency comb with 40 mode pairs, through a two-photon interference measurement that is based on electro-optic phase modulation. Our demonstrations provide an important contribution in establishing integrated optical microresonators as a source for high-dimensional frequency-binmore » encoded quantum computing, as well as dense quantum key distribution.« less

50-GHz-spaced comb of high-dimensional frequency-bin entangled photons from an on-chip silicon nitride microresonator

DOE PAGES

Imany, Poolad; Jaramillo-Villegas, Jose A.; Odele, Ogaga D.; ...

2018-01-18

Quantum frequency combs from chip-scale integrated sources are promising candidates for scalable and robust quantum information processing (QIP). However, to use these quantum combs for frequency domain QIP, demonstration of entanglement in the frequency basis, showing that the entangled photons are in a coherent superposition of multiple frequency bins, is required. We present a verification of qubit and qutrit frequency-bin entanglement using an on-chip quantum frequency comb with 40 mode pairs, through a two-photon interference measurement that is based on electro-optic phase modulation. Our demonstrations provide an important contribution in establishing integrated optical microresonators as a source for high-dimensional frequency-binmore » encoded quantum computing, as well as dense quantum key distribution.« less

Probing coherence in microcavity frequency combs via optical pulse shaping

NASA Astrophysics Data System (ADS)

Ferdous, Fahmida; Miao, Houxun; Wang, Pei-Hsun; Leaird, Daniel E.; Srinivasan, Kartik; Chen, Lei; Aksyuk, Vladimir; Weiner, Andrew M.

2012-09-01

Recent investigations of microcavity frequency combs based on cascaded four-wave mixing have revealed a link between the evolution of the optical spectrum and the observed temporal coherence. Here we study a silicon nitride microresonator for which the initial four-wave mixing sidebands are spaced by multiple free spectral ranges (FSRs) from the pump, then fill in to yield a comb with single FSR spacing, resulting in partial coherence. By using a pulse shaper to select and manipulate the phase of various subsets of spectral lines, we are able to probe the structure of the coherence within the partially coherent comb. Our data demonstrate strong variation in the degree of mutual coherence between different groups of lines and provide support for a simple model of partially coherent comb formation.

Large tuning of birefringence in two strip silicon waveguides via optomechanical motion.

PubMed

Ma, Jing; Povinelli, Michelle L

2009-09-28

We present an optomechanical method to tune phase and group birefringence in parallel silicon strip waveguides. We first calculate the deformation of suspended, parallel strip waveguides due to optical forces. We optimize the frequency and polarization of the pump light to obtain a 9 nm deformation for an optical power of 20 mW. Widely tunable phase and group birefringence can be achieved by varying the pump power, with maximum values of 0.026 and 0.13, respectively. The giant phase birefringence allows linear to circular polarization conversion within 30 microm for a pump power of 67 mW. The group birefringence gives a tunable differential group delay of 6fs between orthogonal polarizations. We also evaluate the tuning performance of waveguides with different cross sections.

Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

PubMed

Wang, Wanjun; Zhou, Haifeng; Yang, Jianyi; Wang, Minghua; Jiang, Xiaoqing

2012-06-15

We report on an experimental 3×3 thermo-optical switch on silicon on insulator. By controlling a single combined phase shifter, light from any input waveguide can be directed to any output waveguide, showing a simple control method and highly integrated structure as compared to the conventional multiway optical switches. Furthermore, the proposed optical switch can be generalized to be a 1×N and N×N optical switch without an extra phase shifter. The switch is fabricated by complementary metal oxide semiconductor technology. By experiment, full 3×3 switching functionality is demonstrated at a wavelength of 1.55 μm, with an average cross talk of -11.1  dB and a power consumption of 97.5 mW.

Separation and Detection of Toxic Gases with a Silicon Micromachined Gas Chromatography System

NASA Technical Reports Server (NTRS)

Kolesar, Edward S.; Reston, Rocky R.

1995-01-01

A miniature gas chromatography (GC) system was designed and fabricated using silicon micromachining and integrated circuit (IC) processing techniques. The silicon micromachined gas chromatography system (SMGCS) is composed of a miniature sample injector that incorporates a 10 microliter sample loop; a 0.9 meter long, rectangular shaped (300 micrometer width and 10 micrometer height) capillary column coated with a 0.2 micrometer thick copper phthalocyanine (CuPc) stationary phase; and a dual detector scheme based upon a CuPc-coated chemiresistor and a commercially available 125 micrometer diameter thermal conductivity detector (TCD) bead. Silicon micromachining was employed to fabricate the interface between the sample injector and the GC column, the column itself, and the dual detector cavity. A novel IC thin-film processing technique was developed to sublime the CuPc stationary phase coating on the column walls that were micromachined in the host silicon wafer substrate and Pyrex (r) cover plate, which were then electrostatically bonded together. The SMGCS can separate binary gas mixtures composed of parts-per-million (ppm) concentrations of ammonia (NH3) and nitrogen dioxide (NO2) when isothermally operated (55-80 degrees C). With a helium carrier gas and nitrogen diluent, a 10 microliter sample volume containing ammonia and nitrogen dioxide injected at 40 psi ((2.8 x 10(exp 5)Pa)) can be separated in less than 30 minutes.

Effect of wheel speed on magnetic and mechanical properties of melt spun Fe-6.5 wt.% Si high silicon steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouyang, Gaoyuan; Jensen, Brandt; Tang, Wei

Here, Fe-Si electric steel is the most widely used soft magnetic material in electric machines and transformers. Increasing the silicon content from 3.2 wt.% to 6.5 wt.% brings about large improvement in the magnetic and electrical properties. However, 6.5 wt.% silicon steel is inherited with brittleness owing to the formation of B2 and D0 3 ordered phase. To obtain ductility in Fe-6.5wt.% silicon steel, the ordered phase has to be bypassed with methods like rapid cooling. In present paper, the effect of cooling rate on magnetic and mechanical properties of Fe-6.5wt.% silicon steel is studied by tuning the wheel speedmore » during melt spinning process. The cooling rate significantly alters the ordering and microstructure, and thus the mechanical and magnetic properties. X-ray diffraction data shows that D0 3 ordering was fully suppressed at high wheel speeds but starts to nucleate at 10m/s and below, which correlates with the increase of Young’s modulus towards low wheel speeds as tested by nanoindentation. The grain sizes of the ribbons on the wheel side decrease with increasing wheel speeds, ranging from ~100 μm at 1m/s to ~8 μm at 30m/s, which lead to changes in coercivity.« less

Effect of wheel speed on magnetic and mechanical properties of melt spun Fe-6.5 wt.% Si high silicon steel

DOE PAGES

Ouyang, Gaoyuan; Jensen, Brandt; Tang, Wei; ...

2017-12-19

Here, Fe-Si electric steel is the most widely used soft magnetic material in electric machines and transformers. Increasing the silicon content from 3.2 wt.% to 6.5 wt.% brings about large improvement in the magnetic and electrical properties. However, 6.5 wt.% silicon steel is inherited with brittleness owing to the formation of B2 and D0 3 ordered phase. To obtain ductility in Fe-6.5wt.% silicon steel, the ordered phase has to be bypassed with methods like rapid cooling. In present paper, the effect of cooling rate on magnetic and mechanical properties of Fe-6.5wt.% silicon steel is studied by tuning the wheel speedmore » during melt spinning process. The cooling rate significantly alters the ordering and microstructure, and thus the mechanical and magnetic properties. X-ray diffraction data shows that D0 3 ordering was fully suppressed at high wheel speeds but starts to nucleate at 10m/s and below, which correlates with the increase of Young’s modulus towards low wheel speeds as tested by nanoindentation. The grain sizes of the ribbons on the wheel side decrease with increasing wheel speeds, ranging from ~100 μm at 1m/s to ~8 μm at 30m/s, which lead to changes in coercivity.« less

Effect of wheel speed on magnetic and mechanical properties of melt spun Fe-6.5 wt.% Si high silicon steel

NASA Astrophysics Data System (ADS)

Ouyang, Gaoyuan; Jensen, Brandt; Tang, Wei; Dennis, Kevin; Macziewski, Chad; Thimmaiah, Srinivasa; Liang, Yongfeng; Cui, Jun

2018-05-01

Fe-Si electric steel is the most widely used soft magnetic material in electric machines and transformers. Increasing the silicon content from 3.2 wt.% to 6.5 wt.% brings about large improvement in the magnetic and electrical properties. However, 6.5 wt.% silicon steel is inherited with brittleness owing to the formation of B2 and D03 ordered phase. To obtain ductility in Fe-6.5wt.% silicon steel, the ordered phase has to be bypassed with methods like rapid cooling. In present paper, the effect of cooling rate on magnetic and mechanical properties of Fe-6.5wt.% silicon steel is studied by tuning the wheel speed during melt spinning process. The cooling rate significantly alters the ordering and microstructure, and thus the mechanical and magnetic properties. X-ray diffraction data shows that D03 ordering was fully suppressed at high wheel speeds but starts to nucleate at 10m/s and below, which correlates with the increase of Young's modulus towards low wheel speeds as tested by nanoindentation. The grain sizes of the ribbons on the wheel side decrease with increasing wheel speeds, ranging from ˜100 μm at 1m/s to ˜8 μm at 30m/s, which lead to changes in coercivity.

Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Magnetic Fields

NASA Technical Reports Server (NTRS)

Jauss, T.; Croell, A.; SorgenFrei, T.; Azizi, M.; Reimann, C.; Friedrich, J.; Volz, M. P.

2014-01-01

Solar cells made from directionally solidified silicon cover 57% of the photovoltaic industry's market [1]. One major issue during directional solidification of silicon is the precipitation of foreign phase particles. These particles, mainly SiC and Si3N4, are precipitated from the dissolved crucible coating, which is made of silicon nitride, and the dissolution of carbon monoxide from the furnace atmosphere. Due to their hardness and size of several hundred micrometers, those particles can lead to severe problems during the wire sawing process for wafering the ingots. Additionally, SiC particles can act as a shunt, short circuiting the solar cell. Even if the particles are too small to disturb the wafering process, they can lead to a grit structure of silicon micro grains and serve as sources for dislocations. All of this lowers the yield of solar cells and reduces the performance of cells and modules. We studied the behaviour of SiC particle depots during float-zone growth under an oxide skin, and strong static magnetic fields. For high field strengths of 3T and above and an oxide layer on the sample surface, convection is sufficiently suppressed to create a diffusive like regime, with strongly dampened convection [2, 3]. To investigate the difference between atomically rough phase boundaries and facetted growth, samples with [100] and [111] orientation were processed.

Dielectric, ferroelectric, and thermodynamic properties of silicone oil modified PVDF films for energy storage application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Bingcheng; Wang, Xiaohui, E-mail: wxh@tsinghua.edu.cn, E-mail: llt-dms@mail.tsinghua.edu.cn; Li, Longtu, E-mail: wxh@tsinghua.edu.cn, E-mail: llt-dms@mail.tsinghua.edu.cn

Silicone oil modified poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) films were fabricated by the blending, casting, and hot-molding methods. The dielectric constant was increased for the 7.4 wt. % and 17.0 wt. % silicone oil modified P(VDF-HFP) films, while the dielectric loss for all blend films are decreased. D-E loops of 7.4 wt. % and 17.0 wt. % silicone oil modified P(VDF-HFP) films become slimmer than the pristine P(VDF-HFP) films. The maximum discharged energy density of 10.3 J/cm{sup 3} was obtained in 7.4 wt. % silicone oil modified P(VDF-HFP) films at the external electric field of 398 kV/mm. The Gibbs energy, miscibility, and phase behavior of binary mixture of P(VDF-HFP) silicone oil were investigated usingmore » molecular simulations and the extended Flory–Huggins model revealing favorable interactions and compatibility between P(VDF-HFP) and silicone oil.« less

Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

DOEpatents

Becher, Paul F [Oak Ridge, TN; Lin, Hua-Tay [Oak Ridge, TN

2011-06-28

A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

Electronic and local atomistic structure of MgSiO3 glass under pressure: a study of X-ray Raman scattering at the silicon and magnesium L-edges

NASA Astrophysics Data System (ADS)

Fukui, Hiroshi; Hiraoka, Nozomu

2018-02-01

We applied X-ray Raman scattering technique to MgSiO3 glass, a precursor to magnesium silicate melts, with respect to magnesium and silicon under high-pressure conditions as well as some polycrystalline phases of MgSiO3 at ambient conditions. We also performed ab initio calculations to interpret the X-ray Raman spectra. Experimentally obtained silicon L-edge spectra indicate that the local environment around silicon started changing at pressure above 10 GPa, where the electronic structure of oxygen is known to change. In contrast, the shape of the magnesium L-edge spectrum changed below 10 GPa. This indicates that the magnesium sites in MgSiO3 glass first distort and that the local structure around magnesium shows a wide variation under pressure. The framework structure consisting of silicon and oxygen changed above 10 GPa, where the coordination number of silicon was more than four. Our results imply that 6-oxygen-coordinated silicon was formed above 20 GPa.

Epitaxial insertion of gold silicide nanodisks during the growth of silicon nanowires.

PubMed

Um, Han-Don; Jee, Sang-Won; Park, Kwang-Tae; Jung, Jin-Young; Guo, Zhongyi; Lee, Jung-Ho

2011-07-01

Nanodisk-shaped, single-crystal gold silicide heterojunctions were inserted into silicon nanowires during vapor-liquid-solid growth using Au as a catalyst within a specific range of chlorine-to-hydrogen atomic ratio. The mechanism of nanodisk formation has been investigated by changing the source gas ratio of SiCl4 to H2. We report that an over-supply of silicon into the Au-Si liquid alloy leads to highly supersaturated solution and enhances the precipitation of Au in the silicon nanowires due to the formation of unstable phases within the liquid alloy. It is shown that the gold precipitates embedded in the silicon nanowires consisted of a metastable gold silicide. Interestingly, faceting of gold silicide was observed at the Au/Si interfaces, and silicon nanowires were epitaxially grown on the top of the nanodisk by vapor-liquid-solid growth. High resolution transmission electron microscopy confirmed that gold silicide nanodisks are epitaxially connected to the silicon nanowires in the direction of growth direction. These gold silicide nanodisks would be useful as nanosized electrical junctions for future applications in nanowire interconnections.

III-V quantum light source and cavity-QED on silicon.

PubMed

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

1995-01-01

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Fabrication of two-dimensional periodic structures on silicon after scanning irradiation with femtosecond laser multi-beams

NASA Astrophysics Data System (ADS)

Pan, An; Si, Jinhai; Chen, Tao; Li, Cunxia; Hou, Xun

2016-04-01

Two-dimensional (2D) periodic structures were fabricated on silicon surfaces by femtosecond laser irradiation in air and water, with the assistance of a microlens array (MLA) placed in the beam's path. By scanning the laser beam along the silicon surface, multiple grooves were simultaneously fabricated in parallel along with smaller laser-induced ripples. The 2D periodic structures contained long-periodic grooves and perpendicular short-periodic laser-induced ripples, which had periods of several microns and several hundred nanometers, respectively. We investigated the influence of laser power and scanning velocity on the morphological evolution of the 2D periodic structures in air and water. Large-area grid-like structures with ripples were fabricated by successively scanning once along each direction of the silicon's surface, which showed enhanced optical absorption. Hydrofluoric acid was then used to remove any oxygen and laser-induced defects for all-silicon structures.

Hybrid integrated single-wavelength laser with silicon micro-ring reflector

NASA Astrophysics Data System (ADS)

Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian

2018-02-01

A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.

High-pressure melting experiments on Fe-Si alloys and implications for silicon as a light element in the core

NASA Astrophysics Data System (ADS)

Ozawa, Haruka; Hirose, Kei; Yonemitsu, Kyoko; Ohishi, Yasuo

2016-12-01

We carried out melting experiments on Fe-Si alloys to 127 GPa in a laser-heated diamond-anvil cell (DAC). On the basis of textural and chemical characterizations of samples recovered from a DAC, a change in eutectic liquid composition in the Fe-FeSi binary system was examined with increasing pressure. The chemical compositions of coexisting liquid and solid phases were quantitatively determined with field-emission-type electron microprobes. The results demonstrate that silicon content in the eutectic liquid decreases with increasing pressure to less than 1.5 ± 0.1 wt.% Si at 127 GPa. If silicon is a single light element in the core, 4.5 to 12 wt.% Si is required in the outer core in order to account for its density deficit from pure iron. However, such a liquid core, whose composition is on the Si-rich side of the eutectic point, crystallizes less dense solid, CsCl (B2)-type phase at the inner core boundary (ICB). Our data also show that the difference in silicon concentration between coexisting solid and liquid is too small to account for the observed density contrast across the ICB. These indicate that silicon cannot be the sole light element in the core. Previous geochemical and cosmochemical arguments, however, strongly require ∼6 wt.% Si in the core. It is possible that the Earth's core originally included ∼6 wt.% Si but then became depleted in silicon by crystallizing SiO2 or MgSiO3.

Bonding and Integration Technologies for Silicon Carbide Based Injector Components

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay

2008-01-01

Advanced ceramic bonding and integration technologies play a critical role in the fabrication and application of silicon carbide based components for a number of aerospace and ground based applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. Ceramic to ceramic diffusion bonding and ceramic to metal brazing technologies are being developed for this injector application. For the diffusion bonding, titanium interlayers (PVD and foils) were used to aid in the joining of silicon carbide (SiC) substrates. The influence of such variables as surface finish, interlayer thickness (10, 20, and 50 microns), processing time and temperature, and cooling rates were investigated. Microprobe analysis was used to identify the phases in the bonded region. For bonds that were not fully reacted an intermediate phase, Ti5Si3Cx, formed that is thermally incompatible in its thermal expansion and caused thermal stresses and cracking during the processing cool-down. Thinner titanium interlayers and/or longer processing times resulted in stable and compatible phases that did not contribute to microcracking and resulted in an optimized microstructure. Tensile tests on the joined materials resulted in strengths of 13-28 MPa depending on the SiC substrate material. Non-destructive evaluation using ultrasonic immersion showed well formed bonds. For the joining technology of brazing Kovar fuel tubes to silicon carbide, preliminary development of the joining approach has begun. Various technical issues and requirements for the injector application are addressed.

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintainingmore » high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vazehrad, S., E-mail: vazehrad@kth.se; Elfsberg, J., E-mail: jessica.elfsberg@scania.com; Diószegi, A., E-mail: attila.dioszegi@jth.hj.se

An investigation on silicon segregation of lamellar, compacted and nodular graphite iron was carried out by applying a selective, immersion color etching and a modified electron microprobe to study the microstructure. The color etched micrographs of the investigated cast irons by revealing the austenite phase have provided data about the chronology and mechanism of microstructure formation. Moreover, electron microprobe has provided two dimensional segregation maps of silicon. A good agreement was found between the segregation profile of silicon in the color etched microstructure and the silicon maps achieved by electron microprobe analysis. However, quantitative silicon investigation was found to bemore » more accurate than color etching results to study the size of the eutectic colonies. - Highlights: • Sensitivity of a color etchant to silicon segregation is quantitatively demonstrated. • Si segregation measurement by EMPA approved the results achieved by color etching. • Color etched micrographs provided data about solidification mechanism in cast irons. • Austenite grain boundaries were identified by measuring the local Si concentration.« less

Graphene-assisted ultra-compact polarization splitter and rotator with an extended bandwidth.

PubMed

Zhang, Tian; Ke, Xianmin; Yin, Xiang; Chen, Lin; Li, Xun

2017-09-22

The high refraction-index contrast between silicon and the surrounding cladding makes silicon-on-insulator devices highly polarization-dependent. However, it is greatly desirable for many applications to address the issue of polarization dependence in silicon photonics. Here, a novel ultra-compact polarization splitter and rotator (PSR), constructed with an asymmetrical directional coupler consisting of a rib silicon waveguide and a graphene-embedded rib silicon waveguide (GERSW), on a silicon-on-insulator platform is proposed and investigated. By taking advantage of the large modulation of the effective refractive index of the TE mode for the GERSW by tuning the chemical potential of graphene, the phase matching condition can be well satisfied over a wide spectral band. The presented result demonstrates that for a 7-layer-graphene-embedded PSR with a coupling length of 11.1 μm, a high TM-to-TE conversion efficiency (>-0.5 dB) can be achieved over a broad bandwidth from 1516 to 1602 nm.

Alkylation of Silicon(111) surfaces

NASA Astrophysics Data System (ADS)

Rivillon, S.; Chabal, Y. J.

2006-03-01

Methylation of chlorine-terminated silicon (111) (Si-Cl) is investigated by Infra Red Absorption Spectroscopy (IRAS). Starting from an atomically flat H-terminated Si(111), the surface is first chlorinated by a gas phase process, then methylated using a Grignard reagent. Methyl groups completely replace Cl, and are oriented normal to the surface. The surface remains atomically flat with no evidence of etching.

Automated aray assembly, phase 2

NASA Technical Reports Server (NTRS)

Daiello, R. V.

1979-01-01

A manufacturing process suitable for the large-scale production of silicon solar array modules at a cost of less than $500/peak kW is described. Factors which control the efficiency of ion implanted silicon solar cells, screen-printed thick film metallization, spray-on antireflection coating process, and panel assembly are discussed. Conclusions regarding technological readiness or cost effectiveness of individual process steps are presented.

High-performance silicon photonic tri-state switch based on balanced nested Mach-Zehnder interferometer.

PubMed

Lu, Zeqin; Celo, Dritan; Mehrvar, Hamid; Bernier, Eric; Chrostowski, Lukas

2017-09-25

This work proposes a novel silicon photonic tri-state (cross/bar/blocking) switch, featuring high-speed switching, broadband operation, and crosstalk-free performance. The switch is designed based on a 2 × 2 balanced nested Mach-Zehnder interferometer structure with carrier injection phase tuning. As compared to silicon photonic dual-state (cross/bar) switches based on Mach-Zehnder interferometers with carrier injection phase tuning, the proposed switch not only has better performance in cross/bar switching but also provides an extra blocking state. The unique blocking state has a great advantage in applications of N × N switch fabrics, where idle switching elements in the fabrics can be configured to the blocking state for crosstalk suppression. According to our numerical experiments on a fully loaded 8 × 8 dilated Banyan switch fabric, the worst output crosstalk of the 8 × 8 switch can be dramatically suppressed by more than 50 dB, by assigning the blocking state to idle switching elements in the fabric. The results of this work can extend the functionality of silicon photonic switches and significantly improve the performance of on-chip N × N photonic switching technologies.

X-ray Raman scattering for structural investigation of silica/silicate minerals

NASA Astrophysics Data System (ADS)

Fukui, H.; Kanzaki, M.; Hiraoka, N.; Cai, Y. Q.

2009-03-01

We have performed X-ray Raman scattering (XRS) measurements on the oxygen K and silicon L absorption edges of four silica minerals: α-quartz, α-cristobalite, coesite, and stishovite. We have also calculated the partial electron densities of states (DOSs) and compared these with the XRS spectra. This study demonstrates that the short-range structure around the atom of interest strongly influences the XRS spectral features. Importantly, the oxygen K-edge XRS spectra are found to reflect the p-orbital DOS while the silicon L-edge spectra reflect the s- and d-orbital DOSs, even when a product of a momentum transfer and a mean radius of a electron orbit (1 s for oxygen and 2 p for silicon), Qr, is close to or larger than unity. Building on this, calculations of the partial DOSs for other silica phases are presented, including ultra-high-pressure phases, which provide a good reference for further XRS study of silica and silicate minerals. XRS measurements should be performed on not only either of oxygen or silicon but also on many kinds of constituent elements to reveal the structural change of glasses/melts of silicates under extreme conditions.

Interband π -like plasmon in silicene grown on silver

NASA Astrophysics Data System (ADS)

Sindona, A.; Cupolillo, A.; Alessandro, F.; Pisarra, M.; Coello Fiallos, D. C.; Osman, S. M.; Caputi, L. S.

2018-01-01

Silicene, the two-dimensional allotrope of silicon, is predicted to exist in a low-buckled honeycomb lattice, characterized by semimetallic electronic bands with graphenelike energy-momentum dispersions around the Fermi level (represented by touching Dirac cones). Single layers of silicene are mostly synthesized by depositing silicon on top of silver, where, however, the different phases observed to date are so strongly hybridized with the substrate that not only the Dirac cones, but also the whole valence and conduction states of ideal silicene appear to be lost. Here, we provide evidence that at least part of this semimetallic behavior is preserved by the coexistence of more silicene phases, epitaxially grown on Ag(111). In particular, we combine electron energy loss spectroscopy and time-dependent density functional theory to characterize the low-energy plasmon of a multiphase-silicene/Ag(111) sample, prepared at controlled silicon coverage and growth temperature. We find that this mode survives the interaction with the substrate, being perfectly matched with the π -like plasmon of ideal silicene. We therefore suggest that the weakened interaction of multiphase silicene with the substrate may provide a unique platform with the potential to develop different applications based on two-dimensional silicon systems.

Study of abrasive wear rate of silicon using n-alcohols

NASA Technical Reports Server (NTRS)

Danyluk, S.

1982-01-01

The work carried out at the University of Illinois at Chicago for the Flat-Plate Solar Array Project under contract No. 956053 is summarized. The abrasion wear rate of silicon in a number of fluid environments and the parameters that influence the surface mechanical properties of silicon were determined. Three tests were carried out in this study: circular and linear multiple-scratch test, microhardness test and a three-point bend test. The pertinent parameters such as effect of surface orientation, dopant and fluid properties were sorted. A brief review and critique of previous work is presented.

Shock loading and release behavior of silicon nitride

NASA Astrophysics Data System (ADS)

Kawai, Nobuaki; Tsuru, Taiki; Hidaka, Naoto; Liu, Xun; Mashimo, Tsutomu

2015-06-01

Shock-reshock and shock-release experiments were performed on silicon nitride ceramics above and below its phase transition pressure. Experimental results clearly show the occurrence of elastic-plastic transition and phase transition during initial shock loading. The HEL and phase transition stress are determined as 11.6 GPa and 34.5 GPa, respectively. Below the phase transition point, the reshock profile consists of the single shock with short rise time, while the release profile shows the gradual release followed by more rapid one. Above the phase transition point, reshock and release behavior varies with the initial shock stress. In the case of reshock and release from about 40 GPa, the reshock structure is considerably dispersed, while the release structure shows rapid release. In the reshock profile from about 50 GPa, the formation of the shock wave with the small ramped precursor is observed. And, the release response from same condition shows initial gradual release and subsequent quite rapid one. These results would provide the information about how phase transformation kinetics effects on the reshock and release behavior.

Characterization of zinc oxide thin film for pH detector

NASA Astrophysics Data System (ADS)

Hashim, Uda; Fathil, M. F. M.; Arshad, M. K. Md; Gopinath, Subash C. B.; Uda, M. N. A.

2017-03-01

This paper presents the fabrication process of the zinc oxide thin films for using to act as pH detection by using different PH solution. Sol-gel solution technique is used for preparing zinc oxide seed solution, followed by metal oxide deposition process by using spin coater on the silicon dioxide. Silicon dioxide layer is grown on the silicon wafer, then, ZnO seed solution is deposited on the silicon layer, baked, and annealing process carried on to undergo the characterization of its surface morphology, structural and crystalline phase. Electrical characterization is showed by using PH 4, 7, and 10 is dropped on the surface of the die, in addition, APTES solution is used as linker and also as a references of the electrical characterization.

A new silicon phase with direct band gap and novel optoelectronic properties

DOE PAGES

Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; ...

2015-09-23

Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~10 4 cm/V · s) at room temperature and a low mass density (1.71 g/cm 3), making it amore » promising material for optoelectronic applications.« less

An experimental investigation of silicon wafer surface roughness and its effect on the full strength of plated metals

NASA Technical Reports Server (NTRS)

Spiers, G. D.

1981-01-01

Plated silicon wafers with surface roughness ranging from 0.4 to 130 microinches were subjected to tensile pull strength tests. Electroless Ni/electroless Cu/electroplated Cu and electroless Ni/electroplated Cu were the two types of plate contacts tested. It was found that smoother surfaces had higher pull strength than rougher, chemically etched surfaces. The presence of the electroless Cu layer was found to be important to adhesion. The mode of fracture of the contact as it left the silicon was studied, and it was found that in almost all cases separation was due to fracture of the bulk silicon phase. The correlation between surface roughness and mode of contact failure is presented and interpreted.

Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats.

PubMed

Lauermann, M; Palmer, R; Koeber, S; Schindler, P C; Korn, D; Wahlbrink, T; Bolten, J; Waldow, M; Elder, D L; Dalton, L R; Leuthold, J; Freude, W; Koos, C

2014-12-01

We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.

Europium Silicide – a Prospective Material for Contacts with Silicon

PubMed Central

Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

2016-01-01

Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

Europium Silicide - a Prospective Material for Contacts with Silicon.

PubMed

Averyanov, Dmitry V; Tokmachev, Andrey M; Karateeva, Christina G; Karateev, Igor A; Lobanovich, Eduard F; Prutskov, Grigory V; Parfenov, Oleg E; Taldenkov, Alexander N; Vasiliev, Alexander L; Storchak, Vyacheslav G

2016-05-23

Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

Optical properties of new wide heterogeneous waveguides with thermo optical shifters.

PubMed

De Leonardis, Francesco; Tsarev, Andrei V; Passaro, Vittorio M

2008-12-22

We present analysis and simulation of novel silicon-on-insulator (SOI) heterogeneous waveguides with thermo-optic phase shifters. New structure design contains a p-n junction on both sides of SOI ridge waveguide with 220 nm x 35 microm silicon core. Strongly mode-dependent optical losses (by additional free charge absorption) provide quasi-singe-mode behavior of wide waveguide with mode size approximately 10 microm. Local heater produces an efficient phase shifting by small temperature increase (DeltaT approximately 2K), switching power (< 40 mW) and switching time (< 10 micros). Mode optical losses are significantly decreased at high heating (DeltaT approximately 120 K).

Functionalization of silicon oxide using supercritical fluid deposition of 3,4-epoxybutyltrimethoxysilane for the immobilization of amino-modified oligonucleotide

NASA Astrophysics Data System (ADS)

Rull, Jordi; Nonglaton, Guillaume; Costa, Guillaume; Fontelaye, Caroline; Marchi-Delapierre, Caroline; Ménage, Stéphane; Marchand, Gilles

2015-11-01

The functionalization of silicon oxide based substrates using silanes is generally performed through liquid phase methodologies. These processes involve a huge quantity of potentially toxic solvents and present some important disadvantages for the functionalization of microdevices or porous materials, for example the low diffusion. To overcome this drawback, solvent-free methodologies like molecular vapor deposition (MVD) or supercritical fluid deposition (SFD) have been developed. In this paper, the deposition process of 3,4-epoxybutyltrimethoxysilane (EBTMOS) on silicon oxide using supercritical carbon dioxide (scCO2) as a solvent is studied for the first time. The oxirane ring of epoxy silanes readily reacts with amine group and is of particular interest for the grafting of amino-modified oligonucleotides or antibodies for diagnostic application. Then the ability of this specific EBTMOS layer to react with amine functions has been evaluated using the immobilization of amino-modified oligonucleotide probes. The presence of the probes is revealed by fluorescence using hybridization with a fluorescent target oligonucleotide. The performances of SFD of EBTMOS have been optimized and then compared with the dip coating and molecular vapor deposition methods, evidencing a better grafting efficiency and homogeneity, a lower reaction time in addition to the eco-friendly properties of the supercritical carbon dioxide. The epoxysilane layers have been characterized by surface enhanced ellipsometric contrast optical technique, atomic force microscopy, multiple internal reflection infrared spectroscopy and X-ray photoelectron spectroscopy. The shelf life of the 3,4-epoxybutyltrimethoxysilane coating layer has also been studied. Finally, two different strategies of NH2-oligonucleotide grafting on EBTMOS coating layer have been compared, i.e. reductive amination and nucleophilic substitution, SN2. This EBTMOS based coating layer can be used for a wide range of applications such as the preparation of new supported and recoverable catalysts and new integrated silicon microdevices for healthcare purposes.

Research pressure instrumentation for NASA Space Shuttle main engine, modification no. 5

NASA Technical Reports Server (NTRS)

Anderson, P. J.; Nussbaum, P.; Gustafson, G.

1984-01-01

The advantages of silicon piezoresistive strain sensing technology are being used to achieve the objectives of state of the art pressure sensors for SSME applications. The integration of multiple functions on a single chip is the key attribute being exploited. Progress is reported in transducer packaging and materials; silicon resistor characterization at cryogenic temperatures; chip mounting; and frequency response optimization.

Silicon Solar Cell Optimization.

DTIC Science & Technology

1981-06-01

from the surface. (b) Oxide mask formation Etching grooves into the silicon requires an effective alkaline-resistant mask which will withstand the...face. This technique employs a very viscous photoresist, Furt #206, in conjunction with multiple spin-applications and bake periods, to effectively ...175 80 125 78 75 74 To compare the effects of groove depth, substrate thick- ness and bulk resistivity, an experiment was conducted. Using identical

Laser beam joining of optical fibers in silicon V-grooves

NASA Astrophysics Data System (ADS)

Kaufmann, Stefan; Otto, Andreas; Luz, Gerhard

2000-06-01

The increasing use of optical data transmission systems and the development of new optical components require adjustment-insensitive and reliable joining and assembling techniques. The state of the art includes the utilization of silicon submounts with anisotropically etched V-grooves. Several glass fibers are fixed in these V-grooves with adhesive. Adhesive bonds tend towards degradation under the influence of temperature and moisture. For this reason, the alternative joining processes laser beam welding and laser beam soldering are relevant. The goal is a reliable joining of optical fibers in V-grooves without damage to the fibers or the silicon submount. Because of the anomaly of silicon during phase transformation, a positive joining can be realized by laser beam welding. A melt pool is created through the energy of a Nd:YAG-laser pulse. During solidification, the volume of silicon increases and a bump is formed in the center. Experiments have shown that this phenomenon can be used for joining optical fibers in silicon-V-grooves. With suitable parameters the silicon flows half around the fiber during solidification. For each fiber, several welding points are necessary. Another promising joining method is laser bema soldering. In this case, a second silicon sheet with a solder deposit is placed on the fibers which lie in the V-grooves of the metallized silicon submount. The laser heats the upper silicon until the solder metals by heat conduction.

Optimization of chemical displacement deposition of copper on porous silicon.

PubMed

Bandarenka, Hanna; Redko, Sergey; Nenzi, Paolo; Balucani, Marco; Bondarenko, Vitaly

2012-11-01

Copper (II) sulfate was used as a source of copper to achieve uniform distribution of Cu particles deposited on porous silicon. Layers of the porous silicon were formed by electrochemical anodization of Si wafers in a mixture of HF, C3H7OH and deionized water. The well-known chemical displacement technique was modified to grow the copper particles of specific sizes. SEM and XRD analysis revealed that the outer surface of the porous silicon was covered with copper particles of the crystal orientation inherited from the planes of porous silicon skeleton. The copper crystals were found to have the cubic face centering elementary cell. In addition, the traces of Cu2O cubic primitive crystalline phases were identified. The dimensions of Cu particles were determined by the Feret's analysis of the SEM images. The sizes of the particles varied widely from a few to hundreds of nanometers. A phenomenological model of copper deposition was proposed.

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

NASA Technical Reports Server (NTRS)

Yoo, H. I.; Iles, P. A.; Tanner, D. P.

1979-01-01

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Silicon-integrated thin-film structure for electro-optic applications

DOEpatents

McKee, Rodney A.; Walker, Frederick Joseph

2000-01-01

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

Trench formation in <110> silicon for millimeter-wave switching device

NASA Astrophysics Data System (ADS)

Datta, P.; Kumar, Praveen; Nag, Manoj; Bhattacharya, D. K.; Khosla, Y. P.; Dahiya, K. K.; Singh, D. V.; Venkateswaran, R.; Kumar, Devender; Kesavan, R.

1999-11-01

Anisotropic etching using alkaline solution has been adopted to form trenches in silicon while fabricating surface oriented bulk window SPST switches. An array pattern has been etched on silicon with good control on depth of trenches. KOH-water solution is seen to yield a poor surface finish. Use of too much of additive like isopropyl alcohol improves the surface condition but distorts the array pattern due to loss of anisotropy. However, controlled use of this additive during the last phase of trench etching is found to produce trenched arrays with desired depth, improved surface finish and minimum distortion of lateral dimensions.

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

NASA Technical Reports Server (NTRS)

Gokoglu, S. A.; Kuczmarski, M. A.

1993-01-01

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

The Influence of the Surface Neutralization of Active Impurities on the Field-Electron Emission Properties of p-Type Silicon Crystals

NASA Astrophysics Data System (ADS)

Yafarov, R. K.

2017-12-01

Correlation dependences between variations of the structural-phase composition, morphology characteristics, and field-electron-emission (FEE) properties of surface-structured p-type silicon singlecrystalline (100)-oriented wafers have been studied during their stepwise high-dose carbon-ion-beam irradiation. It is established that the stepwise implantation of carbon decreases the FEE threshold and favors an increase in the maximum FEE-current density by more than two orders of magnitude. Physicochemical mechanisms involved in this modification of the properties of near-surface layers of silicon under carbon-ion implantation are considered.

Two-liquid-phase slurry bioreactors to enhance the degradation of high-molecular-weight polycyclic aromatic hydrocarbons in soil.

PubMed

Villemur, R; Déziel, E; Benachenhou, A; Marcoux, J; Gauthier, E; Lépine, F; Beaudet, R; Comeau, Y

2000-01-01

High-molecular-weight (HMW) polycyclic aromatic hydrocarbons (PAHs) are pollutants that persist in the environment due to their low solubility in water and their sequestration by soil and sediments. The addition of a water-immiscible, nonbiodegradable, and biocompatible liquid, silicone oil, to a soil slurry was studied to promote the desorption of PAHs from soil and to increase their bioavailability. First, the transfer into silicone oil of phenanthrene, pyrene, chrysene, and benzo[a]pyrene added to a sterilized soil (sandy soil with 0.65% total volatile solids) was measured for 4 days in three two-liquid-phase (TLP) slurry systems each containing 30% (w/v) soil but different volumes of silicone oil (2.5%, 7.5%, and 15% [v/v]). Except for chrysene, a high percentage of these PAHs was transferred from soil to silicone oil in the TLP slurry system containing 15% silicone oil. Rapid PAH transfer occurred during the first 8 h, probably resulting from the extraction of nonsolubilized and of poorly sorbed PAHs. This was followed by a period in which a slower but constant transfer occurred, suggesting extraction of more tightly bound PAHs. Second, a HMW PAH-degrading consortium was enriched in a TLP slurry system with a microbial population isolated from a creosote-contaminated soil. This consortium was then added to three other TLP slurry systems each containing 30% (w/v) sterilized soil that had been artificially contaminated with pyrene, chrysene, and benzo[a]pyrene, but different volumes of silicone oil (10%, 20%, and 30% [v/v]). The resulting TLP slurry bioreactors were much more efficient than the control slurry bioreactor containing the same contaminated soil but no oil phase. In the TLP slurry bioreactor containing 30% silicone oil, the rate of pyrene degradation was 19 mg L(-)(1) day(-)(1) and no pyrene was detected after 4 days. The degradation rates of chrysene and benzo[a]pyrene in the 30% TLP slurry bioreactor were, respectively, 3.5 and 0.94 mg L(-)(1) day(-)(1). Low degradation of pyrene and no significant degradation of chrysene and benzo[a]pyrene occurred in the slurry bioreactor. This is the first report in which a TLP system was combined with a slurry system to improve the biodegradation of PAHs in soil.

Two-mode division multiplexing in a silicon-on-insulator ring resonator.

PubMed

Dorin, Bryce A; Ye, Winnie N

2014-02-24

Mode-division multiplexing (MDM) is an emerging multiple-input multiple-output method, utilizing multimode waveguides to increase channel numbers. In the past, silicon-on-insulator (SOI) devices have been primarily focused on single-mode waveguides. We present the design and fabrication of a two-mode SOI ring resonator for MDM systems. By optimizing the device parameters, we have ensured that each mode is treated equally within the ring. Using adiabatic Bezier curves in the ring bends, our ring demonstrated a signal-to-crosstalk ratio above 18 dB for both modes at the through and drop ports. We conclude that the ring resonator has the potential for filtering and switching for MDM systems on SOI.

Mid-infrared Raman amplification and wavelength conversion in dispersion engineered silicon-on-sapphire waveguides

NASA Astrophysics Data System (ADS)

Wang, Zhaolu; Liu, Hongjun; Huang, Nan; Sun, Qibing; Li, Xuefeng

2014-01-01

Raman amplification based on stimulated Stokes Raman scattering (SSRS) and wavelength conversion based on coherent anti-Stokes Raman scattering (CARS) are theoretically investigated in silicon-on-sapphire (SOS) waveguides in the mid-infrared (IR) region. When the linear phase mismatch Δk is close to zero, the Stokes gain and conversion efficiency drop down quickly due to the effect of parametric gain suppression when the Stokes-pump input ratio is sufficiently large. The Stokes gain increases with the increase of Δk, whereas efficient wavelength conversion needs appropriate Δk under different pump intensities. The conversion efficiency at exact linear phase matching (Δk = 0) is smaller than that at optimal linear phase mismatch by a factor of about 28 dB when the pump intensity is 2 GW cm-2.

Second-harmonic generation in substoichiometric silicon nitride layers

NASA Astrophysics Data System (ADS)

Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

2013-03-01

Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

Evaluation of a new disposable silicon limbal relaxing incision knife by experienced users.

PubMed

Albanese, John; Dugue, Geoffrey; Parvu, Valentin; Bajart, Ann M; Lee, Edwin

2009-12-21

Previous research has suggested that the silicon BD Atomic Edge knife has superior performance characteristics when compared to a metal knife and performance similar to diamond knife when making various incisions. This study was designed to determine whether a silicon accurate depth knife has equivalent performance characteristics when compared to a diamond limbal relaxing incision (LRI) knife and superior performance characteristics when compared to a steel accurate depth knife when creating limbal relaxing incision. Sixty-five ophthalmic surgeons with limbal relaxing incision experience created limbal relaxing incisions in ex-vivo porcine eyes with silicon and steel accurate depth knives and diamond LRI knives. The ophthalmic surgeons rated multiple performance characteristics of the knives on Visual Analog Scales. The observed differences between the silicon knife and diamond knife were found to be insignificant. The mean ratio between the performance of the silicon knife and the diamond knife was shown to be greater than 90% (with 95% confidence). The silicon knife's mean performance was significantly higher than the performance of the steel knife for all characteristics. (p-value < .05) For experienced users, the silicon accurate depth knife was found to be equivalent in performance to the diamond LRI knife and superior to the steel accurate depth knife when making limbal relaxing incisions in ex vivo porcine eyes. Disposable silicon LRI knives may be an alternative to diamond LRI knives.

Electric properties and carrier multiplication in breakdown sites in multi-crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneemann, Matthias; Carius, Reinhard; Rau, Uwe

2015-05-28

This paper studies the effective electrical size and carrier multiplication of breakdown sites in multi-crystalline silicon solar cells. The local series resistance limits the current of each breakdown site and is thereby linearizing the current-voltage characteristic. This fact allows the estimation of the effective electrical diameters to be as low as 100 nm. Using a laser beam induced current (LBIC) measurement with a high spatial resolution, we find carrier multiplication factors on the order of 30 (Zener-type breakdown) and 100 (avalanche breakdown) as new lower limits. Hence, we prove that also the so-called Zener-type breakdown is followed by avalanche multiplication. Wemore » explain that previous measurements of the carrier multiplication using thermography yield results higher than unity, only if the spatial defect density is high enough, and the illumination intensity is lower than what was used for the LBIC method. The individual series resistances of the breakdown sites limit the current through these breakdown sites. Therefore, the measured multiplication factors depend on the applied voltage as well as on the injected photocurrent. Both dependencies are successfully simulated using a series-resistance-limited diode model.« less

Synthesis and electrochemical characterization of Silicon clathrates as anode materials for Lithium ion batteries

NASA Astrophysics Data System (ADS)

Raghavan, Rahul

Novel materials for Li-ion batteries is one of the principle thrust areas for current research in energy storage, more so than most, considering its widespread use in portable electronic gadgets and plug-in electric and hybrid cars. One of the major limiting factors in a Li-ion battery's energy density is the low specific capacities of the active materials in the electrodes. In the search for high-performance anode materials for Li-ion batteries, many alternatives to carbonaceous materials have been studied. Both cubic and amorphous silicon can reversibly alloy with lithium and have a theoretical capacity of 3500 mAh/g, making silicon a potential high density anode material. However, a large volume expansion of 300% occurs due to changes in the structure during lithium insertion, often leading to pulverization of the silicon. To this end, a class of silicon based cage compounds called clathrates are studied for electrochemical reactivity with lithium. Silicon-clathrates consist of silicon covalently bonded in cage structures comprised of face sharing Si20, Si24 and/or Si28 clusters with guest ions occupying the interstitial positions in the polyhedra. Prior to this, silicon clathrates have been studied primarily for their superconducting and thermoelectric properties. In this work, the synthesis and electrochemical characterization of two categories of silicon clathrates - Type-I silicon clathrate with aluminum framework substitution and barium guest ions (Ba8AlxSi46-x) and Type-II silicon clathrate with sodium guest ions (Nax Si136), are explored. The Type-I clathrate, Ba8AlxSi46-x consists of an open framework of aluminium and silicon, with barium (guest) atoms occupying the interstitial positions. X-ray diffraction studies have shown that a crystalline phase of clathrate is obtained from synthesis, which is powdered to a fine particle size to be used as the anode material in a Li-ion battery. Electrochemical measurements of these type of clathrates have shown that capacities comparable to graphite can be obtained for up to 10 cycles and lower capacities can be obtained for up to 20 cycles. Unlike bulk silicon, the clathrate structure does not undergo excessive volume change upon lithium intercalation, and therefore, the crystal structure is morphologically stable over many cycles. X-ray diffraction of the clathrate after cycling showed that crystallinity is intact, indicating that the clathrate does not collapse during reversible intercalation with lithium ions. Electrochemical potential spectroscopy obtained from the cycling data showed that there is an absence of formation of lithium-silicide, which is the product of lithium alloying with diamond cubic silicon. Type II silicon clathrate, NaxSi136, consists of silicon making up the framework structure and sodium (guest) atoms occupying the interstitial spaces. These clathrates showed very high capacities during their first intercalation cycle, in the range of 3,500 mAh/g, but then deteriorated during subsequent cycles. X-ray diffraction after one cycle showed the absence of clathrate phase and the presence of lithium-silicide, indicating the disintegration of clathrate structure. This could explain the silicon-like cycling behavior of Type II clathrates.

Thermal evolution of the metastable r8 and bc8 polymorphs of silicon

DOE PAGES

Haberl, Bianca; Guthrie, Malcolm; Sinogeikin, Stanislav V.; ...

2015-01-28

The kinetics of two metastable polymorphs of silicon under thermal annealing was investigated. These phases with body-centered cubic bc8 and rhombohedral r8 structures can be formed upon pressure release from metallic silicon.We study these metastable polymorphs were formed by two different methods, via point loading and in a diamond anvil cell (DAC). Upon thermal annealing different transition pathways were detected. In the point loading case, the previously reported Si-XIII formed and was confirmed as a new phase with an as-yet-unidentified structure. In the DAC case, bc8-Si transformed to the hexagonal-diamond structure at elevated pressure, consistent with previous studies at ambientmore » pressure. In contrast, r8-Si transformed directly to diamond-cubic Si at a temperature of 255⁰C. In conclusion, these data were used to construct diagrams of the metastability regimes of the polymorphs formed in a DAC and may prove useful for potential technological applications of these metastable polymorphs.« less

Thermal evolution of the metastable r8 and bc8 polymorphs of silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haberl, Bianca; Guthrie, Malcolm; Sinogeikin, Stanislav V.

The kinetics of two metastable polymorphs of silicon under thermal annealing was investigated. These phases with body-centered cubic bc8 and rhombohedral r8 structures can be formed upon pressure release from metallic silicon.We study these metastable polymorphs were formed by two different methods, via point loading and in a diamond anvil cell (DAC). Upon thermal annealing different transition pathways were detected. In the point loading case, the previously reported Si-XIII formed and was confirmed as a new phase with an as-yet-unidentified structure. In the DAC case, bc8-Si transformed to the hexagonal-diamond structure at elevated pressure, consistent with previous studies at ambientmore » pressure. In contrast, r8-Si transformed directly to diamond-cubic Si at a temperature of 255⁰C. In conclusion, these data were used to construct diagrams of the metastability regimes of the polymorphs formed in a DAC and may prove useful for potential technological applications of these metastable polymorphs.« less

Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas

NASA Astrophysics Data System (ADS)

Horita, Susumu; Jain, Puneet

2018-03-01

We investigated the dependences of the deposition rate and residual OH content of SiO2 films on the concentration of trichloroethylene (TCE), which was added during deposition at low temperatures of 160-260 °C with the reactant gases of silicone oil (SO) and O3. The deposition rate depends on the TCE concentration and is minimum at a concentration of ˜0.4 mol/m3 at 200 °C. The result can be explained by surface and gas-phase reactions. Experimentally, we also revealed that the thickness profile is strongly affected by gas-phase reaction, in which the TCE vapor was blown directly onto the substrate surface, where it mixed with SO and O3. Furthermore, it was found that adding TCE vapor reduces residual OH content in the SiO2 film deposited at 200 °C because TCE enhances the dehydration reaction.

Effect Of Chromium Underlayer On The Properties Of Nano-Crystalline Diamond Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garratt, Elias; AlFaify, Salem; Yoshitake, T.

2013-01-11

This paper investigated the effect of chromium underlayer on the structure, microstructure and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on silicon substrate with a thin film of chromium as an underlayer. The composition, structure and microstructure of the deposited layers were analyzed using non-Rutherford Backscattering Spectrometry, Raman Spectroscopy, Near-Edge X-Ray Absorption Fine Structure, X-ray Diffraction and Atomic Force Microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphiticmore » phases of the films evaluated by x-ray and optical spectroscopic analysis determined consistency between sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction.« less

Effect of chromium underlayer on the properties of nano-crystalline diamond films

NASA Astrophysics Data System (ADS)

Garratt, E.; AlFaify, S.; Yoshitake, T.; Katamune, Y.; Bowden, M.; Nandasiri, M.; Ghantasala, M.; Mancini, D. C.; Thevuthasan, S.; Kayani, A.

2013-01-01

This paper investigated the effect of chromium underlayer on the structure, microstructure, and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on single crystal silicon substrate with a thin film of chromium as an underlayer. Characterization of the film was implemented using non-Rutherford backscattering spectrometry, Raman spectroscopy, near-edge x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphitic phases of the films evaluated by x-ray and optical spectroscopic analyses determined consistency between the sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction.

Simultaneous Detection of Multiple Disease States.

DTIC Science & Technology

1990-02-14

analytes to be assayed in a panel forma And due to its simplicity, OIA has been demonstrated to be generally applicable to a wide range of testing...into two distinct formats on the basis of signal generation: visual and instrumented. In both cases monocrystalline silicon wafers are employed as...Due to the limited surface area available on the monocrystalline silicon wafers, attention must be paid to efficient immobilization to ensure

Thermal Response Analysis of Phospholipid Bilayers Using Ellipsometric Techniques.

PubMed

González-Henríquez, Carmen M; Villegas-Opazo, Vanessa A; Sagredo-Oyarce, Dallits H; Sarabia-Vallejos, Mauricio A; Terraza, Claudio A

2017-08-18

Biomimetic planar artificial membranes have been widely studied due to their multiple applications in several research fields. Their humectation and thermal response are crucial for reaching stability; these characteristics are related to the molecular organization inside the bilayer, which is affected by the aliphatic chain length, saturations, and molecule polarity, among others. Bilayer stability becomes a fundamental factor when technological devices are developed-like biosensors-based on those systems. Thermal studies were performed for different types of phosphatidylcholine (PC) molecules: two pure PC bilayers and four binary PC mixtures. These analyses were carried out through the detection of slight changes in their optical and structural parameters via Ellipsometry and Surface Plasmon Resonance (SPR) techniques. Phospholipid bilayers were prepared by Langmuir-Blodgett technique and deposited over a hydrophilic silicon wafer. Their molecular inclination degree, mobility, and stability of the different phases were detected and analyzed through bilayer thickness changes and their optical phase-amplitude response. Results show that certain binary lipid mixtures-with differences in its aliphatic chain length-present a co-existence of two thermal responses due to non-ideal mixing.

The putative liquid-liquid transition is a liquid-solid transition in atomistic models of water

NASA Astrophysics Data System (ADS)

Limmer, David T.; Chandler, David

2011-10-01

We use numerical simulation to examine the possibility of a reversible liquid-liquid transition in supercooled water and related systems. In particular, for two atomistic models of water, we have computed free energies as functions of multiple order parameters, where one is density and another distinguishes crystal from liquid. For a range of temperatures and pressures, separate free energy basins for liquid and crystal are found, conditions of phase coexistence between these phases are demonstrated, and time scales for equilibration are determined. We find that at no range of temperatures and pressures is there more than a single liquid basin, even at conditions where amorphous behavior is unstable with respect to the crystal. We find a similar result for a related model of silicon. This result excludes the possibility of the proposed liquid-liquid critical point for the models we have studied. Further, we argue that behaviors others have attributed to a liquid-liquid transition in water and related systems are in fact reflections of transitions between liquid and crystal.

An organophosphonate strategy for functionalizing silicon photonic biosensors

PubMed Central

Shang, Jing; Cheng, Fang; Dubey, Manish; Kaplan, Justin M.; Rawal, Meghana; Jiang, Xi; Newburg, David S.; Sullivan, Philip A.; Andrade, Rodrigo B.; Ratner, Daniel M.

2012-01-01

Silicon photonic microring resonators have established their potential for label-free and low-cost biosensing applications. However, the long-term performance of this optical sensing platform requires robust surface modification and biofunctionalization. Herein, we demonstrate a conjugation strategy based on an organophosphonate surface coating and vinyl sulfone linker to biofunctionalize silicon resonators for biomolecular sensing. To validate this method, a series of glycans, including carbohydrates and glycoconjugates, were immobilized on divinyl sulfone (DVS)/organophosphonate-modified microrings and used to characterize carbohydrate-protein and norovirus particle interactions. This biofunctional platform was able to orthogonally detect multiple specific carbohydrate-protein interactions simultaneously. Additionally, the platform was capable of reproducible binding after multiple regenerations by high-salt, high-pH or low-pH solutions and after 1-month storage in ambient conditions. This remarkable stability and durability of the organophosphonate immobilization strategy will facilitate the application of silicon microring resonators in various sensing conditions, prolong their lifetime, and minimize the cost for storage and delivery; these characteristics are requisite for developing biosensors for point-of-care and distributed diagnostics and other biomedical applications. In addition, the platform demonstrated its ability to characterize carbohydrate-mediated host-virus interactions, providing a facile method for discovering new anti-viral agents to prevent infectious disease. PMID:22220731

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

PubMed Central

Wu, Kuen-Hsien; Li, Chong-Wei

2015-01-01

Porous-silicon (PS) multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si) substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS) structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells. PMID:28793542

Bio-inspired Fabrication of Complex Hierarchical Structure in Silicon.

PubMed

Gao, Yang; Peng, Zhengchun; Shi, Tielin; Tan, Xianhua; Zhang, Deqin; Huang, Qiang; Zou, Chuanping; Liao, Guanglan

2015-08-01

In this paper, we developed a top-down method to fabricate complex three dimensional silicon structure, which was inspired by the hierarchical micro/nanostructure of the Morpho butterfly scales. The fabrication procedure includes photolithography, metal masking, and both dry and wet etching techniques. First, microscale photoresist grating pattern was formed on the silicon (111) wafer. Trenches with controllable rippled structures on the sidewalls were etched by inductively coupled plasma reactive ion etching Bosch process. Then, Cr film was angled deposited on the bottom of the ripples by electron beam evaporation, followed by anisotropic wet etching of the silicon. The simple fabrication method results in large scale hierarchical structure on a silicon wafer. The fabricated Si structure has multiple layers with uniform thickness of hundreds nanometers. We conducted both light reflection and heat transfer experiments on this structure. They exhibited excellent antireflection performance for polarized ultraviolet, visible and near infrared wavelengths. And the heat flux of the structure was significantly enhanced. As such, we believe that these bio-inspired hierarchical silicon structure will have promising applications in photovoltaics, sensor technology and photonic crystal devices.

Human aortic endothelial cell morphology influenced by topography of porous silicon substrates.

PubMed

Formentín, Pilar; Catalán, Úrsula; Fernández-Castillejo, Sara; Alba, Maria; Baranowska, Malgorzata; Solà, Rosa; Pallarès, Josep; Marsal, Lluís F

2015-10-01

Porous silicon has received much attention because of its optical properties and for its usefulness in cell-based biosensing, drug delivery, and tissue engineering applications. Surface properties of the biomaterial are associated with cell adhesion and with proliferation, migration, and differentiation. The present article analyzes the behavior of human aortic endothelial cells in macro- and nanoporous collagen-modified porous silicon samples. On both substrates, cells are well adhered and numerous. Confocal microscopy and scanning electron microscopy were employed to study the effects of porosity on the morphology of the cells. On macroporous silicon, filopodia is not observed but the cell spreads on the surface, increasing the lamellipodia surface which penetrates the macropore. On nanoporous silicon, multiple filopodia were found to branch out from the cell body. These results demonstrate that the pore size plays a key role in controlling the morphology and growth rate of human aortic endothelial cells, and that these forms of silicon can be used to control cell development in tissue engineering as well as in basic cell biology research. © The Author(s) 2015.

Fabrication and stabilization of silicon-based photonic crystals with tuned morphology for multi-band optical filtering

NASA Astrophysics Data System (ADS)

Salem, Mohamed Shaker; Abdelaleem, Asmaa Mohamed; El-Gamal, Abear Abdullah; Amin, Mohamed

2017-01-01

One-dimensional silicon-based photonic crystals are formed by the electrochemical anodization of silicon substrates in hydrofluoric acid-based solution using an appropriate current density profile. In order to create a multi-band optical filter, two fabrication approaches are compared and discussed. The first approach utilizes a current profile composed of a linear combination of sinusoidal current waveforms having different frequencies. The individual frequency of the waveform maps to a characteristic stop band in the reflectance spectrum. The stopbands of the optical filter created by the second approach, on the other hand, are controlled by stacking multiple porous silicon rugate multilayers having different fabrication conditions. The morphology of the resulting optical filters is tuned by controlling the electrolyte composition and the type of the silicon substrate. The reduction of sidelobes arising from the interference in the multilayers is observed by applying an index matching current profile to the anodizing current waveform. In order to stabilize the resulting optical filters against natural oxidation, atomic layer deposition of silicon dioxide on the pore wall is employed.

SiNOI and AlGaAs-on-SOI nonlinear circuits for continuum generation in Si photonics

NASA Astrophysics Data System (ADS)

El Dirani, Houssein; Monat, Christelle; Brision, Stéphane; Olivier, Nicolas; Jany, Christophe; Letartre, Xavier; Pu, Minhao; Girouard, Peter D.; Hagedorn Frandsen, Lars; Semenova, Elizaveta; Katsuo Oxenløwe, Leif; Yvind, Kresten; Sciancalepore, Corrado

2018-02-01

In this communication, we report on the design, fabrication, and testing of Silicon Nitride on Insulator (SiNOI) and Aluminum-Gallium-Arsenide (AlGaAs) on silicon-on-insulator (SOI) nonlinear photonic circuits for continuum generation in Silicon (Si) photonics. As recently demonstrated, the generation of frequency continua and supercontinua can be used to overcome the intrinsic limitations of nowadays silicon photonics notably concerning the heterogeneous integration of III-V on SOI lasers for datacom and telecom applications. By using the Kerr nonlinearity of monolithic silicon nitride and heterointegrated GaAs-based alloys on SOI, the generation of tens or even hundreds of new optical frequencies can be obtained in dispersion tailored waveguides, thus providing an all-optical alternative to the heterointegration of hundreds of standalone III-V on Si lasers. In our work, we present paths to energy-efficient continua generation on silicon photonics circuits. Notably, we demonstrate spectral broadening covering the full C-band via Kerrbased self-phase modulation in SiNOI nanowires featuring full process compatibility with Si photonic devices. Moreover, AlGaAs waveguides are heterointegrated on SOI in order to dramatically reduce (x1/10) thresholds in optical parametric oscillation and in the power required for supercontinuum generation under pulsed pumping. The manufacturing techniques allowing the monolithic co-integration of nonlinear functionalities on existing CMOS-compatible Si photonics for both active and passive components will be shown. Experimental evidence based on self-phase modulation show SiNOI and AlGaAs nanowires capable of generating wide-spanning frequency continua in the C-Band. This will pave the way for low-threshold power-efficient Kerr-based comb- and continuum- sources featuring compatibility with Si photonic integrated circuits (Si-PICs).

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

PubMed

Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

2015-11-11

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

32 × 32 silicon electro-optic switch with built-in monitors and balanced-status units.

PubMed

Qiao, Lei; Tang, Weijie; Chu, Tao

2017-02-09

To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach-Zehnder interferometer (MZI)-type switch unit to balance the two operation statuses of a silicon electro-optical switch during push-pull operation. With these methods, a 32 × 32 MZI-based silicon electro-optical switch was successfully fabricated with 180-nm complementary metal-oxide-semiconductor (CMOS) process technology, which is the largest scale silicon electro-optical switch to the best of our knowledge. At a wavelength of 1520 nm, the on-chip insertion losses were 12.9 to 16.5 dB, and the crosstalk ranged from -17.9 to -24.8 dB when all units were set to the 'Cross' status. The losses were 14.4 to 18.5 dB, and the crosstalk ranged from -15.1 to -19.0 dB when all units were in the 'Bar' status. The total power consumptions of the 32 × 32 switch were 247.4 and 542.3 mW when all units were set to the 'Cross' and 'Bar' statuses, respectively.

32 × 32 silicon electro-optic switch with built-in monitors and balanced-status units

PubMed Central

Qiao, Lei; Tang, Weijie; Chu, Tao

2017-01-01

To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach–Zehnder interferometer (MZI)-type switch unit to balance the two operation statuses of a silicon electro-optical switch during push–pull operation. With these methods, a 32 × 32 MZI-based silicon electro-optical switch was successfully fabricated with 180-nm complementary metal–oxide–semiconductor (CMOS) process technology, which is the largest scale silicon electro-optical switch to the best of our knowledge. At a wavelength of 1520 nm, the on-chip insertion losses were 12.9 to 16.5 dB, and the crosstalk ranged from −17.9 to −24.8 dB when all units were set to the ‘Cross’ status. The losses were 14.4 to 18.5 dB, and the crosstalk ranged from −15.1 to −19.0 dB when all units were in the ‘Bar’ status. The total power consumptions of the 32 × 32 switch were 247.4 and 542.3 mW when all units were set to the ‘Cross’ and ‘Bar’ statuses, respectively. PMID:28181557

Synthesis of silicone softener and its characteristics on cotton fabric.

PubMed

Robati, D

2007-02-15

This study was undertaken to examine the unresolved questions surrounding the influence of silicon softener on cotton fabrics. Results showed that the synthesized silicon softener was comparable with other tested conventional softener, According to present investigations the emulsions E1 and E2 is not economical and it is not evenly qualified and it become two phased after 24 h. But emulsion E3 was even and more economical. Moreover, it has high stability. In addition, measurement of kinetic and static friction show that the general effect of silicon softener on cotton cloth is the decrease of friction. Also, it was concluded that with increasing the add on percentage of softener, the crease of reflection angle did not change bending length and static and kinetic friction index significantly.

Phase 2 of the array automated assembly task for the low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Petersen, R. C.

1980-01-01

Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work was directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The process was found to be extremely lengthy and cumbersome, and was also found to produce a product virtually identical to that produced by single step electroless nickel plating, as shown by adhesion tests and electrical characteristics of cells under illumination.

Process Research of Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1984-01-01

A passivation process (hydrogenation) that will improve the power generation of solar cells fabricated from presently produced, large grain, cast polycrystalline silicon (Semix), a potentially low cost material are developed. The first objective is to verify the operation of a DC plasma hydrogenation system and to investigate the effect of hydrogen on the electrical performance of a variety of polycrystalline silicon solar cells. The second objective is to parameterize and optimize a hydrogenation process for cast polycrystalline silicon, and will include a process sensitivity analysis. The sample preparation for the first phase is outlined. The hydrogenation system is described, and some early results that were obtained using the hydrogenation system without a plasma are summarized. Light beam induced current (LBIC) measurements of minicell samples, and their correlation to dark current voltage characteristics, are discussed.

LCoS-SLM technology based on Digital Electro-optics Platform and using in dynamic optics for application development

NASA Astrophysics Data System (ADS)

Tsai, Chun-Wei; Wang, Chen; Lyu, Bo-Han; Chu, Chen-Hsien

2017-08-01

Digital Electro-optics Platform is the main concept of Jasper Display Corp. (JDC) to develop various applications. These applications are based on our X-on-Silicon technologies, for example, X-on-Silicon technologies could be used on Liquid Crystal on Silicon (LCoS), Micro Light-Emitting Diode on Silicon (μLEDoS), Organic Light-Emitting Diode on Silicon (OLEDoS), and Cell on Silicon (CELLoS), etc. LCoS technology is applied to Spatial Light Modulator (SLM), Dynamic Optics, Wavelength Selective Switch (WSS), Holographic Display, Microscopy, Bio-tech, 3D Printing and Adaptive Optics, etc. In addition, μLEDoS technology is applied to Augmented Reality (AR), Head Up Display (HUD), Head-mounted Display (HMD), and Wearable Devices. Liquid Crystal on Silicon - Spatial Light Modulator (LCoSSLM) based on JDC's On-Silicon technology for both amplitude and phase modulation, have an expanding role in several optical areas where light control on a pixel-by-pixel basis is critical for optimum system performance. Combination of the advantage of hardware and software, we can establish a "dynamic optics" for the above applications or more. Moreover, through the software operation, we can control the light more flexible and easily as programmable light processor.

Solar cell circuit and method for manufacturing solar cells

NASA Technical Reports Server (NTRS)

Mardesich, Nick (Inventor)

2010-01-01

The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

Type I clathrates as novel silicon anodes: An electrochemical and structural investigation

DOE PAGES

Li, Ying; Raghavan, Rahul; Wagner, Nicholas A.; ...

2015-05-05

In this study, silicon clathrates contain cage-like structures that can encapsulate various guest atoms or molecules. Here we present an electrochemical evaluation of type I silicon clathrates based on Ba 8Al ySi 46-y for the anode material in lithium-ion batteries. Post-cycling characterization with NMR and XRD show no discernible structural or volume changes even after electrochemical insertion of 44 Li into the clathrate structure. The observed properties are in stark contrast with lithiation of other silicon anodes, which become amorphous and suffer from larger volume changes. The lithiation/delithiation processes are proposed to occur in single phase reactions at approximately 0.2more » and 0.4 V vs. Li/Li +, respectively, distinct from other diamond cubic or amorphous silicon anodes. Reversible capacities as high as 499 mAh g -1 at a 5 mA g -1 rate were observed for silicon clathrate with composition Ba 8Al 8.54S i37.46, corresponding to Li:Si of 1.18:1. The results show that silicon clathrates could be promising durable anodes for lithium-ion batteries.« less

Type I clathrates as novel silicon anodes: An electrochemical and structural investigation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ying; Raghavan, Rahul; Wagner, Nicholas A.

In this study, silicon clathrates contain cage-like structures that can encapsulate various guest atoms or molecules. Here we present an electrochemical evaluation of type I silicon clathrates based on Ba 8Al ySi 46-y for the anode material in lithium-ion batteries. Post-cycling characterization with NMR and XRD show no discernible structural or volume changes even after electrochemical insertion of 44 Li into the clathrate structure. The observed properties are in stark contrast with lithiation of other silicon anodes, which become amorphous and suffer from larger volume changes. The lithiation/delithiation processes are proposed to occur in single phase reactions at approximately 0.2more » and 0.4 V vs. Li/Li +, respectively, distinct from other diamond cubic or amorphous silicon anodes. Reversible capacities as high as 499 mAh g -1 at a 5 mA g -1 rate were observed for silicon clathrate with composition Ba 8Al 8.54S i37.46, corresponding to Li:Si of 1.18:1. The results show that silicon clathrates could be promising durable anodes for lithium-ion batteries.« less

Precise calibration of spatial phase response nonuniformity arising in liquid crystal on silicon.

PubMed

Xu, Jingquan; Qin, SiYi; Liu, Chen; Fu, Songnian; Liu, Deming

2018-06-15

In order to calibrate the spatial phase response nonuniformity of liquid crystal on silicon (LCoS), we propose to use a Twyman-Green interferometer to characterize the wavefront distortion, due to the inherent curvature of the device. During the characterization, both the residual carrier frequency introduced by the Fourier transform evaluation method and the lens aberration are error sources. For the tilted phase error introduced by residual carrier frequency, the least mean square fitting method is used to obtain the tilted phase error. Meanwhile, we use Zernike polynomials fitting based on plane mirror calibration to mitigate the lens aberration. For a typical LCoS with 1×12,288 pixels after calibration, the peak-to-valley value of the inherent wavefront distortion is approximately 0.25λ at 1550 nm, leading to a half-suppression of wavefront distortion. All efforts can suppress the root mean squares value of the inherent wavefront distortion to approximately λ/34.

Fabrication and secondary-phase crystallization of rare-earth disilicate-silicon nitride ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cinibulk, M.K.; Thomas, G.; Johnson, S.M.

1992-08-01

In this paper, the fabrication and intergranular-phase devitrification of silicon nitride densified with rare-earth (RE) oxide additives is investigated. The additions of the oxides of Sm, Gd, Dy, Er, and Yb, having high melting points and behaving similarly to Y[sub 2]O[sub 3], were compositionally controlled to tailor a microstructure with a crystalline secondary phase of RE[sub 2]Si[sub 2]O[sub 7]. The lanthanide oxides were found to be ass effective as Y[sub 2]O[sub 3] in densifying Si[sub 3]N[sub 4], resulting in identical microstructures and densities of 98-99% of theoretical density. The crystallization behavior of all six disilicates was similar, characterized by amore » limited nucleation and rapid growth mechanism resulting in large single crystals. Complete crystallization of the intergranular phase was obtained with the exception of a thin residual amorphous film which was observed at interfaces and believed to be rich in impurities, the cause of incomplete devitrification.« less

The Effect of SiC Polytypes on the Heat Distribution Efficiency of a Phase Change Memory.

NASA Astrophysics Data System (ADS)

Aziz, M. S.; Mohammed, Z.; Alip, R. I.

2018-03-01

The amorphous to crystalline transition of germanium-antimony-tellurium (GST) using three types of silicon carbide’s structure as a heating element was investigated. Simulation was done using COMSOL Multiphysic 5.0 software with separate heater structure. Silicon carbide (SiC) has three types of structure; 3C-SiC, 4H-SiC and 6H-SiC. These structures have a different thermal conductivity. The temperature of GST and phase transition of GST can be obtained from the simulation. The temperature of GST when using 3C-SiC, 4H-SiC and 6H-SiC are 467K, 466K and 460K, respectively. The phase transition of GST from amorphous to crystalline state for three type of SiC’s structure can be determined in this simulation. Based on the result, the thermal conductivity of SiC can affecting the temperature of GST and changed of phase change memory (PCM).

Periodically poled silicon

NASA Astrophysics Data System (ADS)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Protein aggregation and particle formation in prefilled glass syringes.

PubMed

Gerhardt, Alana; Mcgraw, Nicole R; Schwartz, Daniel K; Bee, Jared S; Carpenter, John F; Randolph, Theodore W

2014-06-01

The stability of therapeutic proteins formulated in prefilled syringes (PFS) may be negatively impacted by the exposure of protein molecules to silicone oil-water interfaces and air-water interfaces. In addition, agitation, such as that experienced during transportation, may increase the detrimental effects (i.e., protein aggregation and particle formation) of protein interactions with interfaces. In this study, surfactant-free formulations containing either a monoclonal antibody or lysozyme were incubated in PFS, where they were exposed to silicone oil-water interfaces (siliconized syringe walls), air-water interfaces (air bubbles), and agitation stress (occurring during end-over-end rotation). Using flow microscopy, particles (≥2 μm diameter) were detected under all conditions. The highest particle concentrations were found in agitated, siliconized syringes containing an air bubble. The particles formed in this condition consisted of silicone oil droplets and aggregated protein, as well as agglomerates of protein aggregates and silicone oil. We propose an interfacial mechanism of particle generation in PFS in which capillary forces at the three-phase (silicone oil-water-air) contact line remove silicone oil and gelled protein aggregates from the interface and transport them into the bulk. This mechanism explains the synergistic effects of silicone oil-water interfaces, air-water interfaces, and agitation in the generation of particles in protein formulations. © 2014 Wiley Periodicals, Inc. and the American Pharmacists Association.

Comparative Study of Solution Phase and Vapor Phase Deposition of Aminosilanes on Silicon Dioxide Surfaces

PubMed Central

Yadav, Amrita R.; Sriram, Rashmi; Carter, Jared A.; Miller, Benjamin L.

2014-01-01

The uniformity of aminosilane layers typically used for the modification of hydroxyl bearing surfaces such as silicon dioxide is critical for a wide variety of applications, including biosensors. However, in spite of many studies that have been undertaken on surface silanization, there remains a paucity of easy-to-implement deposition methods reproducibly yielding smooth aminosilane monolayers. In this study, solution- and vapor-phase deposition methods for three aminoalkoxysilanes differing in the number of reactive groups (3-aminopropyl triethoxysilane (APTES), 3-aminopropyl methyl diethoxysilane (APMDES) and 3-aminopropyl dimethyl ethoxysilane (APDMES)) were assessed with the aim of identifying methods that yield highly uniform and reproducible silane layers that are resistant to minor procedural variations. Silane film quality was characterized based on measured thickness, hydrophilicity and surface roughness. Additionally, hydrolytic stability of the films was assessed via these thickness and contact angle values following desorption in water. We found that two simple solution-phase methods, an aqueous deposition of APTES and a toluene based deposition of APDMES, yielded high quality silane layers that exhibit comparable characteristics to those deposited via vapor-phase methods. PMID:24411379

Deviatoric stress-induced phase transitions in diamantane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Fan; Lin, Yu; Dahl, Jeremy E. P.

2014-10-21

The high-pressure behavior of diamantane was investigated using angle-dispersive synchrotron x-ray diffraction (XRD) and Raman spectroscopy in diamond anvil cells. Our experiments revealed that the structural transitions in diamantane were extremely sensitive to deviatoric stress. Under non-hydrostatic conditions, diamantane underwent a cubic (space group Pa3) to a monoclinic phase transition at below 0.15 GPa, the lowest pressure we were able to measure. Upon further compression to 3.5 GPa, this monoclinic phase transformed into another high-pressure monoclinic phase which persisted to 32 GPa, the highest pressure studied in our experiments. However, under more hydrostatic conditions using silicone oil as a pressuremore » medium, the transition pressure to the first high-pressure monoclinic phase was elevated to 7–10 GPa, which coincided with the hydrostatic limit of silicone oil. In another experiment using helium as a pressure medium, no phase transitions were observed to the highest pressure we reached (13 GPa). In addition, large hysteresis and sluggish transition kinetics were observed upon decompression. Over the pressure range where phase transitions were confirmed by XRD, only continuous changes in the Raman spectra were observed. This suggests that these phase transitions are associated with unit cell distortions and modifications in molecular packing rather than the formation of new carbon-carbon bonds under pressure.« less

NASA 2009 Body of Knowledge (BoK) Through-Slicon Via Technology

NASA Technical Reports Server (NTRS)

Gerke, David

2009-01-01

Through-silicon via (TSV) is the latest in a progression of technologies for stacking silicon devices in three dimensions (3D). Driven by the need for improved performance, methods to use short vertical interconnects to replace the long interconnects found in 2D structures have been developed. The industry is moving past the feasibility (research and development [R and D]) phase for TSV technology into the commercialization phase where economic realities will determine which technologies are adopted. Low-cost fine via hole formation and highly reliable via filling technologies have been demonstrated; process equipment and materials are available. Even though design, thermal, and test issues remain, much progress has been made.

Fiber Bragg grating sensor interrogators on chip: challenges and opportunities

NASA Astrophysics Data System (ADS)

Marin, Yisbel; Nannipieri, Tiziano; Oton, Claudio J.; Di Pasquale, Fabrizio

2017-04-01

In this paper we present an overview of the current efforts towards integration of Fiber Bragg Grating (FBG) sensor interrogators. Different photonic integration platforms will be discussed, including monolithic planar lightwave circuit technology, silicon on insulator (SOI), indium phosphide (InP) and gallium arsenide (GaAs) material platforms. Also various possible techniques for wavelength metering and methods for FBG multiplexing will be discussed and compared in terms of resolution, dynamic performance, multiplexing capabilities and reliability. The use of linear filters, array waveguide gratings (AWG) as multiple linear filters and AWG based centroid signal processing techniques will be addressed as well as interrogation techniques based on tunable micro-ring resonators and Mach-Zehnder interferometers (MZI) for phase sensitive detection. The paper will also discuss the challenges and perspectives of photonic integration to address the increasing requirements of several industrial applications.

Native-View Paradigms: Multiple Cultures and Culture Conflicts in Organizations.

ERIC Educational Resources Information Center

Gregory, Kathleen L.

1983-01-01

After reviewing organizational culture studies done in industrial settings, this paper proposes a native-view paradigm from anthropology for exploring the multiple perspectives of participants in large organizations and describes a study--of Silicon Valley technical professionals' native views--that applies the methods of ethnoscience ethnography.…

Detection of [SiLL] (34.8 micron) emission in Orion-KL: A measurement of the silicon abundance in dense interstellar gas

NASA Technical Reports Server (NTRS)

Haas, M. R.; Hollenbach, D. J.; Erickson, E. F.

1985-01-01

The first detection of the ground state fine structure transition of Si+ at a rest wavelength determined to be 34.815 + or - 0.004 micron are reported. These observations were obtained with the facility spectrometer on NASA's Kuiper Airborne Observatory. A 6' NW-SE strip scan across the Orion-KL region shows SiII emission from both the extended photodissociation region surrounding theta 1 Ori C and from the shocked gas NW of BN-KL. The inferred gas-phase silicon elemental abundance relative to hydrogen in the dense 10 to the 5/cc primarily neutral photodissociation region is approximately 2.6 x to the -6, a factor of 0.075 times the solar value and 3.4 times greater than the abundance in the moderate density approx. 10 to the 3/cc cloud toward zeta Oph. The silicon abundance in the shocked gas is approximately solar, indicating that any pre-existing grains have been destroyed in the shock wave or that the preshock gas carries a near solar abundance of gas phase silicon. The shock-excited SiII (34.8 micron) emission may arise from shocked wind material in the outflow around IRc2, with wind velocities approx. 100 km/s.

Comparison of Spacecraft Contamination Models with Well-Defined Flight Experiment

NASA Technical Reports Server (NTRS)

Pippin, G. H.

1998-01-01

The report presents analyzed surface areas on particular experiment trays from the Long Duration Exposure Facility (LDEF) for silicone-based molecular contamination. The trays for examination were part of the Ultra-Heavy Cosmic Ray Experiment (UHCRE). These particular trays were chosen because each tray was identical to the others in construction, and the materials on each tray were well known, documented, and characterized. In particular, a known specific source of silicone contamination was present on each tray. Only the exposure conditions varied from tray to tray. The results of post-flight analyses of surfaces of three trays were compared with the predictions of the three different spacecraft molecular contamination models. Phase one tasks included: 1) documenting the detailed geometry of the hardware; 2) determining essential properties of the anodized aluminum, Velcro(Tm), silverized Teflon(Tm), silicone gaskets, and DC6-1104(Tm) silicone adhesive materials used to make the trays, tray covers, and thermal control blankets; 3) selecting and removing areas from each tray; and 4) beginning surface analysis of the selected tray walls. Phase two tasks included: 1) completion of surface analysis measurements of the selected tray surface, 2) obtaining auger depth profiles at selected locations, and 3) running versions of the ISEM, MOFLUX, and PLIMP (Plume Impingement) contamination prediction models and making comparisons with experimental results.

Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horibe, Kosuke; Oda, Shunri; Kodera, Tetsuo, E-mail: kodera.t.ac@m.titech.ac.jp

2015-02-23

Silicon quantum dot (QD) devices with a proximal single-electron transistor (SET) charge sensor have been fabricated in a metal-oxide-semiconductor structure based on a silicon-on-insulator substrate. The charge state of the QDs was clearly read out using the charge sensor via the SET current. The lithographically defined small QDs enabled clear observation of the few-electron regime of a single QD and a double QD by charge sensing. Tunnel coupling on tunnel barriers of the QDs can be controlled by tuning the top-gate voltages, which can be used for manipulation of the spin quantum bit via exchange interaction between tunnel-coupled QDs. Themore » lithographically defined silicon QD device reported here is technologically simple and does not require electrical gates to create QD confinement potentials, which is advantageous for the integration of complicated constructs such as multiple QD structures with SET charge sensors for the purpose of spin-based quantum computing.« less

III–V quantum light source and cavity-QED on Silicon

PubMed Central

Luxmoore, I. J.; Toro, R.; Pozo-Zamudio, O. Del; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. PMID:23393621

Sensitivity analysis of the add-on price estimate for the silicon web growth process

NASA Technical Reports Server (NTRS)

Mokashi, A. R.

1981-01-01

The web growth process, a silicon-sheet technology option, developed for the flat plate solar array (FSA) project, was examined. Base case data for the technical and cost parameters for the technical and commercial readiness phase of the FSA project are projected. The process add on price, using the base case data for cost parameters such as equipment, space, direct labor, materials and utilities, and the production parameters such as growth rate and run length, using a computer program developed specifically to do the sensitivity analysis with improved price estimation are analyzed. Silicon price, sheet thickness and cell efficiency are also discussed.

Evaluation of Selected Chemical Processes for Production of Low-cost Silicon, Phase 3. [using a fluidized bed reactor

NASA Technical Reports Server (NTRS)

Blocher, J. M., Jr.; Browning, M. F.

1979-01-01

The construction and operation of an experimental process system development unit (EPSDU) for the production of granular semiconductor grade silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles is presented. The construction of the process development unit (PDU) is reported. The PDU consists of four critical units of the EPSDU: the fluidized bed reactor, the reactor by product condenser, the zinc vaporizer, and the electrolytic cell. An experimental wetted wall condenser and its operation are described. Procedures are established for safe handling of SiCl4 leaks and spills from the EPSDU and PDU.

Characterization of thin irradiated epitaxial silicon sensors for the CMS phase II pixel upgrade

NASA Astrophysics Data System (ADS)

Centis Vignali, M.

2015-02-01

The high-luminosity upgrade of the Large Hadron Collider foreseen for 2023 resulted on the decision to replace the tracker system of the CMS experiment. The innermost layer of the new pixel detector will experience fluences in the order of phieq ≈ 1016 cm-2 and a dose of ≈ 5 MGy after an integrated luminosity of 3000 fb-1. Several materials and designs are under investigation in order to build a detector that can withstand such high fluences. Thin planar silicon sensors are good candidates to achieve this goal since the degradation of the signal produced by traversing particles is less severe than for thicker devices. A study has been carried out in order to characterize highly irradiated planar epitaxial silicon sensors with an active thickness of 100 μm. The investigation includes pad diodes and strip detectors irradiated up to a fluence of phieq = 1.3 × 1016 cm-2, and 3 × 1015 cm-2, respectively. The electrical properties of diodes have been characterized using laboratory measurements, while measurements have been carried out at the DESY II test beam facility to characterize the charge collection of the strip detectors. A beam telescope has been used to determine precisely the impact position of beam particles on the sensor. This allows the unbiased extraction of the charge deposited in the strip sensor and good identification of the noise. In this paper, the results obtained for p-bulk sensors are shown. The charge collection efficiency of the strip sensors is 90% at 1000 V after a fluence of phieq = 3 × 1015 cm-2. The irradiated diodes show charge multiplication effects. The impact of the threshold applied to a detector on its efficiency is also discussed.

Organometallic Routes into the Nanorealms of Binary Fe-Si Phases

PubMed Central

Kolel-Veetil, Manoj K.; Keller, Teddy M.

2010-01-01

The Fe-Si binary system provides several iron silicides that have varied and exceptional material properties with applications in the electronic industry. The well known Fe-Si binary silicides are Fe3Si, Fe5Si3, FeSi, α-FeSi2 and β-FeSi2. While the iron-rich silicides Fe3Si and Fe5Si3 are known to be room temperature ferromagnets, the stoichiometric FeSi is the only known transition metal Kondo insulator. Furthermore, Fe5Si3 has also been demonstrated to exhibit giant magnetoresistance (GMR). The silicon-rich β-FeSi2 is a direct band gap material usable in light emitting diode (LED) applications. Typically, these silicides are synthesized by traditional solid-state reactions or by ion beam-induced mixing (IBM) of alternating metal and silicon layers. Alternatively, the utilization of organometallic compounds with reactive transition metal (Fe)-carbon bonds has opened various routes for the preparation of these silicides and the silicon-stabilized bcc- and fcc-Fe phases contained in the Fe-Si binary phase diagram. The unique interfacial interactions of carbon with the Fe and Si components have resulted in the preferential formation of nanoscale versions of these materials. This review will discuss such reactions.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

NASA Astrophysics Data System (ADS)

Poley, L.; Bloch, I.; Edwards, S.; Friedrich, C.; Gregor, I.-M.; Jones, T.; Lacker, H.; Pyatt, S.; Rehnisch, L.; Sperlich, D.; Wilson, J.

2016-05-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

On-chip integratable all-optical quantizer using strong cross-phase modulation in a silicon-organic hybrid slot waveguide

PubMed Central

Kang, Zhe; Yuan, Jinhui; Zhang, Xianting; Sang, Xinzhu; Wang, Kuiru; Wu, Qiang; Yan, Binbin; Li, Feng; Zhou, Xian; Zhong, Kangping; Zhou, Guiyao; Yu, Chongxiu; Farrell, Gerald; Lu, Chao; Yaw Tam, Hwa; Wai, P. K. A.

2016-01-01

High performance all-optical quantizer based on silicon waveguide is believed to have significant applications in photonic integratable optical communication links, optical interconnection networks, and real-time signal processing systems. In this paper, we propose an integratable all-optical quantizer for on-chip and low power consumption all-optical analog-to-digital converters. The quantization is realized by the strong cross-phase modulation and interference in a silicon-organic hybrid (SOH) slot waveguide based Mach-Zehnder interferometer. By carefully designing the dimension of the SOH waveguide, large nonlinear coefficients up to 16,000 and 18,069 W−1/m for the pump and probe signals can be obtained respectively, along with a low pulse walk-off parameter of 66.7 fs/mm, and all-normal dispersion in the wavelength regime considered. Simulation results show that the phase shift of the probe signal can reach 8π at a low pump pulse peak power of 206 mW and propagation length of 5 mm such that a 4-bit all-optical quantizer can be realized. The corresponding signal-to-noise ratio is 23.42 dB and effective number of bit is 3.89-bit. PMID:26777054

Nickel/Platinum Dual Silicide Axial Nanowire Heterostructures with Excellent Photosensor Applications.

PubMed

Wu, Yen-Ting; Huang, Chun-Wei; Chiu, Chung-Hua; Chang, Chia-Fu; Chen, Jui-Yuan; Lin, Ting-Yi; Huang, Yu-Ting; Lu, Kuo-Chang; Yeh, Ping-Hung; Wu, Wen-Wei

2016-02-10

Transition metal silicide nanowires (NWs) have attracted increasing attention as they possess advantages of both silicon NWs and transition metals. Over the past years, there have been reported with efforts on one silicide in a single silicon NW. However, the research on multicomponent silicides in a single silicon NW is still rare, leading to limited functionalities. In this work, we successfully fabricated β-Pt2Si/Si/θ-Ni2Si, β-Pt2Si/θ-Ni2Si, and Pt, Ni, and Si ternary phase axial NW heterostructures through solid state reactions at 650 °C. Using in situ transmission electron microscope (in situ TEM), the growth mechanism of silicide NW heterostructures and the diffusion behaviors of transition metals were systematically studied. Spherical aberration corrected scanning transmission electron microscope (Cs-corrected STEM) equipped with energy dispersive spectroscopy (EDS) was used to analyze the phase structure and composition of silicide NW heterostructures. Moreover, electrical and photon sensing properties for the silicide nanowire heterostructures demonstrated promising applications in nano-optoeletronic devices. We found that Ni, Pt, and Si ternary phase nanowire heterostructures have an excellent infrared light sensing property which is absent in bulk Ni2Si or Pt2Si. The above results would benefit the further understanding of heterostructured nano materials.

BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor

NASA Astrophysics Data System (ADS)

Zhang, Haidong; Liu, Hanyu; Wei, Kaya; Kurakevych, Oleksandr O.; Le Godec, Yann; Liu, Zhenxian; Martin, Joshua; Guerrette, Michael; Nolas, George S.; Strobel, Timothy A.

2017-04-01

Large-volume, phase-pure synthesis of BC8 silicon (I a 3 ¯ , c I 16 ) has enabled bulk measurements of optical, electronic, and thermal properties. Unlike previous reports that conclude BC8-Si is semimetallic, we demonstrate that this phase is a direct band gap semiconductor with a very small energy gap and moderate carrier concentration and mobility at room temperature, based on far- and midinfrared optical spectroscopy, temperature-dependent electrical conductivity, Seebeck and heat capacity measurements. Samples exhibit a plasma wavelength near 11 μ m , indicating potential for infrared plasmonic applications. Thermal conductivity is reduced by 1-2 orders of magnitude depending on temperature as compared with the diamond cubic (DC-Si) phase. The electronic structure and dielectric properties can be reproduced by first-principles calculations with hybrid functionals after adjusting the level of exact Hartree-Fock (HF) exchange mixing. These results clarify existing limited and controversial experimental data sets and ab initio calculations.

Metallurgical reactions in two industrially strip-cast aluminum-manganese alloys

NASA Astrophysics Data System (ADS)

Hansen, V.; Andersson, B.; Tibballs, J. E.; Gjønnes, J.

1995-08-01

Precipitation, phase transformation, subgrain growth, and recrystallization that occur during heat treatment of two strip-cast, cold-rolled, high manganese aluminum alloys have been studied mainly by transmission electron microscopy (TEM). The alloys differ in silicon content. The isothermal heat treatments have been performed in a salt bath at temperatures between 330 °C and 530 °C for times up to 1000 hours. Size distributions for each type of secondary particle have been determined. After short annealing times, small quasicrystals precipitated and subsequently transformed to α phase. The densities of these precipitates controlled dislocation movement and regulated subgrain sizes. Prolonged heating resulted in peritectoid reactions to Al6Mn or Al12Mn. Recrystallization, which is associated with the formation of Al12Mn, is advanced by increasing the silicon content; the nucleation and growth of Al12Mn occurs only at the expense of other phases that stabilize the subgrain network.