A 700 V narrow channel nJFET with low pinch-off voltage and suppressed drain-induced barrier lowering effect

NASA Astrophysics Data System (ADS)

Mao, Kun; Qiao, Ming; Zhang, WenTong; Zhang, Bo; Li, Zhaoji

2014-11-01

This paper proposes a 700 V narrow channel region triple-RESURF (reduced surface field) n-type junction field-effect transistor (NCT-nJFET). Compared to traditional structures, low pinch-off voltage (VP) with unobvious drain-induced barrier lowering (DIBL) effect and large saturated current (IDsat) are achieved. This is because p-type buried layer (Pbury) and PWELL are introduced to shape narrow n-type channel in JFET channel region. DIBL sensitivity (SDIBL) is firstly introduced in this paper to analyze the DIBL effect of high-voltage long-channel JFET. Ultra-high breakdown voltage is obtained by triple RESURF technology. Experimental results show that proposed NCT-nJFET achieves 24-V VP, 3.5% SDIBL, 2.3-mA IDsat, 800-V OFF-state breakdown voltage (OFF-BV) and 650-V ON-state breakdown voltage when VGS equals 0 V (ON-BV).

Investigation of performance enhancement in InAs/InGaAs heterojunction-enhanced N-channel tunneling field-effect transistor

NASA Astrophysics Data System (ADS)

Han, Genquan; Zhao, Bin; Liu, Yan; Wang, Hongjuan; Liu, Mingshan; Zhang, Chunfu; Hu, Shengdong; Hao, Yue

2015-12-01

We design a heterojunction-enhanced n-channel tunneling field effect transistor (HE-TFET) with an InAs/In1-xGaxAs heterojunction located in channel region with a distance of LT-H from source/channel tunneling junction. The influence of LT-H on the performance of HE-TFETs is investigated by simulation. Compared with InAs homo-NTFET, the positive shift of onset voltage, the steeper subthreshold swing (SS), and the enhanced on-state current ION are achieved in HE-NTFETs, which is attributed to the modulation of the heterojunction on band-to-band tunneling. At a supply voltage of 0.3 V, ION of InAs/In0.9Ga0.1As HE-NTFET with a LT-H of 6 nm demonstrates an enhancement of 119.3% in comparison with the homo device. Furthermore, the impact of Ga composition on the performance of HE-NTFETs is studied. As the Ga composition increases, the average SS characteristics of HE-NTFETs are improved, while the drive current of devices is reduced due to the increasing of tunneling barrier.

Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Qing-Wen, Song; Xiao-Yan, Tang; Yan-Jing, He; Guan-Nan, Tang; Yue-Hu, Wang; Yi-Meng, Zhang; Hui, Guo; Ren-Xu, Jia; Hong-Liang, Lv; Yi-Men, Zhang; Yu-Ming, Zhang

2016-03-01

In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich- (nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO2 were examined by the measurement of HF I-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2 × 1011 eV-1·cm-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm2·V-1·s-1, and the maximum peak field-effect mobility of 38 cm2·V-1·s-1 was achieved in fabricated lateral 4H-SiC MOSFFETs. Projcet supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

Simulation study of short-channel effects of tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Mori, Takahiro; Morita, Yukinori; Mizubayashi, Wataru; Masahara, Meishoku; Migita, Shinji; Ota, Hiroyuki; Endo, Kazuhiro; Matsukawa, Takashi

2018-04-01

Short-channel effects of tunnel field-effect transistors (FETs) are investigated in detail using simulations of a nonlocal band-to-band tunneling model. Discussion is limited to silicon. Several simulation scenarios were considered to address different effects, such as source overlap and drain offset effects. Adopting the drain offset to suppress the drain leakage current suppressed the short channel effects. The physical mechanism underlying the short-channel behavior of the tunnel FETs (TFETs) was very different from that of metal-oxide-semiconductor FETs (MOSFETs). The minimal gate lengths that do not lose on-state current by one order are shown to be 3 nm for single-gate structures and 2 nm for double gate structures, as determined from the drain offset structure.

AlN metal-semiconductor field-effect transistors using Si-ion implantation

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel

NASA Astrophysics Data System (ADS)

Leach, J. H.; Wu, M.; Morkoç, H.; Liberis, J.; Šermukšnis, E.; Ramonas, M.; Matulionis, A.

2011-11-01

A bottleneck for heat dissipation from the channel of a GaN-based heterostructure field-effect transistor is treated in terms of the lifetime of nonequilibrium (hot) longitudinal optical phonons, which are responsible for additional scattering of electrons in the voltage-biased quasi-two-dimensional channel. The hot-phonon lifetime is measured for an Al0.33Ga0.67N/AlN/Al0.1Ga0.9N/GaN heterostructure where the mobile electrons are spread in a composite Al0.1Ga0.9N/GaN channel and form a camelback electron density profile at high electric fields. In accordance with plasmon-assisted hot-phonon decay, the parameter of importance for the lifetime is not the total charge in the channel (the electron sheet density) but rather the electron density profile. This is demonstrated by comparing two structures with equal sheet densities (1 × 1013 cm-2), but with different density profiles. The camelback channel profile exhibits a shorter hot-phonon lifetime of ˜270 fs as compared with ˜500 fs reported for a standard Al0.33Ga0.67N/AlN/GaN channel at low supplied power levels. When supplied power is sufficient to heat the electrons > 600 K, ultrafast decay of hot phonons is observed in the case of the composite channel structure. In this case, the electron density profile spreads to form a camelback profile, and hot-phonon lifetime reduces to ˜50 fs.

Charge-Transfer-Induced p-Type Channel in MoS2 Flake Field Effect Transistors.

PubMed

Min, Sung-Wook; Yoon, Minho; Yang, Sung Jin; Ko, Kyeong Rok; Im, Seongil

2018-01-31

The two-dimensional transition-metal dichalcogenide semiconductor MoS 2 has received extensive attention for decades because of its outstanding electrical and mechanical properties for next-generation devices. One weakness of MoS 2 , however, is that it shows only n-type conduction, revealing its limitations for homogeneous PN diodes and complementary inverters. Here, we introduce a charge-transfer method to modify the conduction property of MoS 2 from n- to p-type. We initially deposited an n-type InGaZnO (IGZO) film on top of the MoS 2 flake so that electron charges might be transferred from MoS 2 to IGZO during air ambient annealing. As a result, electron charges were depleted in MoS 2 . Such charge depletion lowered the MoS 2 Fermi level, which makes hole conduction favorable in MoS 2 when optimum source/drain electrodes with a high work function are selected. Our IGZO-supported MoS 2 flake field effect transistors (FETs) clearly display channel-type conversion from n- to p-channel in this way. Under short- and long-annealing conditions, n- and p-channel MoS 2 FETs are achieved, respectively, and a low-voltage complementary inverter is demonstrated using both channels in a single MoS 2 flake.

Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

NASA Astrophysics Data System (ADS)

Hu, Ai-Bin; Xu, Qiu-Xia

2010-05-01

Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance-voltage curve hysteresis of Ge metal-oxide-semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO2 (1 < x < 2). Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method. The peak hole mobilities of Si and Ge transistors are 33.4 cm2/(V · s) and 81.0 cm2/(V · s), respectively. Ge transistor has a hole mobility 2.4 times higher than that of Si control sample.

Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.

PubMed

Miao, Jinshui; Zhang, Suoming; Cai, Le; Scherr, Martin; Wang, Chuan

2015-09-22

This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By controlling the evaporation angle, the channel length of the transistors can be reproducibly controlled to be anywhere between 20 and 70 nm. The as-fabricated 20 nm top-gated BP transistors exhibit respectable on-state current (174 μA/μm) and transconductance (70 μS/μm) at a VDS of 0.1 V. Due to the use of two-dimensional BP as the channel material, the transistors exhibit relatively small short channel effects, preserving a decent on-off current ratio of 10(2) even at an extremely small channel length of 20 nm. Additionally, unlike the unencapsulated BP devices, which are known to be chemically unstable in ambient conditions, the top-gated BP transistors passivated by the Al2O3 gate dielectric layer remain stable without noticeable degradation in device performance after being stored in ambient conditions for more than 1 week. This work demonstrates the great promise of atomically thin BP for applications in ultimately scaled transistors.

Impact of source height on the characteristic of U-shaped channel tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Yang, Zhaonian; Zhang, Yue; Yang, Yuan; Yu, Ningmei

2017-11-01

Tunnel field-effect transistor (TFET) is very attractive in replacing a MOSFET, particularly for low-power nanoelectronic circuits. The U-shaped channel TFET (U-TFET) was proposed to improve the drain-source current with a reduced footprint. In this work, the impact of the source height (HS) on the characteristic of the U-shaped channel tunnel field-effect transistor (U-TFET) is investigated by using TCAD simulation. It is found that with a fixed gate height (HG) the drain-source current has a negative correlation with HS. This is because when the gate region is deeper than the source region, the electric field near the corner of the tunneling junction can be enhanced and the tunneling rate is increased. When HS becomes very thin, the drain-source current is limited by the source region volume. The U-TFET with an n+ pocket is also studied and the same trend is observed.

InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current

NASA Astrophysics Data System (ADS)

Peng, Yue; Han, Genquan; Wang, Hongjuan; Zhang, Chunfu; Liu, Yan; Wang, Yibo; Zhao, Shenglei; Zhang, Jincheng; Hao, Yue

2016-05-01

InN/In0.75Ga0.25N complementary heterojunction-enhanced tunneling field-effect transistors (HE-TFETs) were characterized using the numerical simulation. InN/In0.75Ga0.25N HE-TFET has an InN/In0.75Ga0.25N heterojunction located in the channel region with a distance of LT-H from the source/channel tunneling junction. We demonstrate that, for both n- and p-channel devices, HE-TFETs have a delay of onset voltage VONSET, a steeper subthreshold swing (SS), and an enhanced on-state current ION in comparison with the homo-TFETs. InN/In0.75Ga0.25N n- and p-channel HE-TFETs with a gate length LG of 25 nm and a LT-H of 5 nm achieve a 7 and 9 times ION improvement in comparison with the homo devices, respectively, at a supply voltage of 0.3 V. The performance enhancement in HE-TFETs is attributed to the modulating effect of heterojunction on band-to-band tunneling (BTBT). Because InN/In0.75Ga0.25N heterointerface shows the similar band offsets at conduction and valence bands, the InN/In0.75Ga0.25N heterojunction exhibits the improved effect on BTBT for both n- and p-channel devices. This makes InN/In0.75Ga0.25N heterojunction a promising structure for high performance complementary TFETs.

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

NASA Astrophysics Data System (ADS)

Šermukšnis, E.; Liberis, J.; Matulionis, A.; Avrutin, V.; Ferreyra, R.; Özgür, Ü.; Morkoç, H.

2015-03-01

Real-space transfer of hot electrons is studied in dual-channel GaN-based heterostructure operated at or near plasmon-optical phonon resonance in order to attain a high electron drift velocity at high current densities. For this study, pulsed electric field is applied in the channel plane of a nominally undoped Al0.3Ga0.7N/AlN/{Al0.15Ga0.85N/GaN} structure with a composite channel of Al0.15Ga0.85N/GaN, where the electrons with a sheet density of 1.4 × 1013 cm-2, estimated from the Hall effect measurements, are confined. The equilibrium electrons are situated predominantly in the Al0.15Ga0.85N layer as confirmed by capacitance-voltage experiment and Schrödinger-Poisson modelling. The main peak of the electron density per unit volume decreases as more electrons occupy the GaN layer at high electric fields. The associated decrease in the plasma frequency induces the plasmon-assisted decay of non-equilibrium optical phonons (hot phonons) confirmed by the decrease in the measured hot-phonon lifetime from 0.95 ps at low electric fields down below 200 fs at fields of E \\gt 4 kV cm-1 as the plasmon-optical phonon resonance is approached. The onset of real-space transfer is resolved from microwave noise measurements: this source of noise dominates for E \\gt 8 kV cm-1. In this range of fields, the longitudinal current exceeds the values measured for a mono channel reference Al0.3Ga0.7N/AlN/GaN structure. The results are explained in terms of the ultrafast decay of hot phonons and reduced alloy scattering caused by the real-space transfer in the composite channel.

Design consideration of δ-doping channels for high-performance n + - GaAs / p + -InGaP/n-GaAs camel-gate field effect transistors

NASA Astrophysics Data System (ADS)

Tsai, Jung-Hui; Chen, Jeng-Shyan; Chu, Yu-Jui

2005-01-01

The influence of δ-doping channels on the performance of n +-GaAs/p +-InGaP/n-GaAs camel-gate field effect transistors is investigated by theoretical analysis and experimental results. The depleted pn junction of the camel gate and the existence of considerable conduction band discontinuity at the InGaP/GaAs heterojunction enhance the potential barrier height and the forward gate voltage. As the concentration-thickness products of the n-GaAs layer and δ-doping layer are fixed, the higher δ-doping device exhibits a higher potential barrier height, a larger drain current, and a broader gate voltage swing, whereas the transconductance is somewhat lower. For a n +=5.5×10 12 cm -2δ-doping device, the experimental result exhibits a maximum transconductance of 240 mS/mm and a gate voltage swing of 3.5 V. Consequently, the studied devices provide a good potential for large signal and linear circuit applications.

Recent progress in n-channel organic thin-film transistors.

PubMed

Wen, Yugeng; Liu, Yunqi

2010-03-26

Particular attention has been focused on n-channel organic thin-film transistors (OTFTs) during the last few years, and the potentially cost-effective circuitry-based applications in flexible electronics, such as flexible radiofrequency identity tags, smart labels, and simple displays, will benefit from this fast development. This article reviews recent progress in performance and molecular design of n-channel semiconductors in the past five years, and limitations and practicable solutions for n-channel OTFTs are dealt with from the viewpoint of OTFT constitution and geometry, molecular design, and thin-film growth conditions. Strategy methodology is especially highlighted with an aim to investigate basic issues in this field.

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Hashizume, Tamotsu

2012-04-01

For AlGaN/GaN heterojunction field-effect transistors, on-state-bias-stress (on-stress)-induced trapping effects were observed across the entire drain access region, not only at the gate edge. However, during the application of on-stress, the highest electric field was only localized at the drain side of the gate edge. Using the location of the highest electric field as a reference, the trapping effects at the gate edge and at the more distant access region were referred to as localized and non-localized trapping effect, respectively. Using two-dimensional-electron-gas sensing-bar (2DEG-sensing-bar) and dual-gate structures, the non-localized trapping effects were investigated and the trap density was measured to be ˜1.3 × 1012 cm-2. The effect of passivation was also discussed. It was found that both surface leakage currents and hot electrons are responsible for the non-localized trapping effects with hot electrons having the dominant effect. Since hot electrons are generated from the 2DEG channel, it is highly likely that the involved traps are mainly in the GaN buffer layer. Using monochromatic irradiation (1.24-2.81 eV), the trap levels responsible for the non-localized trapping effects were found to be located at 0.6-1.6 eV from the valence band of GaN. Both trap-assisted impact ionization and direct channel electron injection are proposed as the possible mechanisms of the hot-electron-related non-localized trapping effect. Finally, using the 2DEG-sensing-bar structure, we directly confirmed that blocking gate injected electrons is an important mechanism of Al2O3 passivation.

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Kim, Hyeongnam; Nath, Digbijoy; Rajan, Siddharth; Lu, Wu

2013-01-01

Polarization-engineered Ga-face GaN-based heterostructures with a GaN cap layer and an AlGaN/ p-GaN back barrier have been designed for normally-off field-effect transistors (FETs). The simulation results show that an unintentionally doped GaN cap and p-GaN layer in the buffer primarily deplete electrons in the channel and the Al0.2Ga0.8N back barrier helps to pinch off the channel. Experimentally, we have demonstrated a normally-off GaN-based field-effect transistor on the designed GaN cap/Al0.3Ga0.7N/GaN channel/Al0.2Ga0.8N/ p-GaN/GaN heterostructure. A positive threshold voltage of 0.2 V and maximum transconductance of 2.6 mS/mm were achieved for 80- μm-long gate devices. The device fabrication process does not require a dry etching process for gate recessing, while highly selective etching of the GaN cap against a very thin Al0.3GaN0.7N top barrier has to be performed to create a two-dimensional electron gas for both the ohmic and access regions. A self-aligned, selective etch of the GaN cap in the access region is introduced, using the gate metal as an etch mask. The absence of gate recess etching is promising for uniform and repeatable threshold voltage control in normally-off AlGaN/GaN heterostructure FETs for power switching applications.

Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness

NASA Astrophysics Data System (ADS)

Kim, Jungsik; Oh, Hyeongwan; Kim, Jiwon; Meyyappan, M.; Lee, Jeong-Soo

2017-02-01

Effects of using asymmetric channel thickness in tunneling field-effect transistors (TFET) are investigated in sub-50 nm channel regime using two-dimensional (2D) simulations. As the thickness of the source side becomes narrower in narrow-source wide-drain (NSWD) TFETs, the threshold voltage (V th) and the subthreshold swing (SS) decrease due to enhanced gate controllability of the source side. The narrow source thickness can make the band-to-band tunneling (BTBT) distance shorter and induce much higher electric field near the source junction at the on-state condition. In contrast, in a TFET with wide-source narrow-drain (WSND), the SS shows almost constant values and the V th slightly increases with narrowing thickness of the drain side. In addition, the ambipolar current can rapidly become larger with smaller thickness on the drain side because of the shorter BTBT distance and the higher electric-field at the drain junction. The on-current of the asymmetric channel TFET is lower than that of conventional TFETs due to the volume limitation of the NSWD TFET and high series resistance of the WSND TFET. The on-current is almost determined by the channel thickness of the source side.

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Almad

2009-01-01

high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Far-Field Plume Measurements of a Nested-Channel Hall-Effect Thruster (PREPRINT)

DTIC Science & Technology

2010-12-13

nude Faraday probe, retarding potential analyzer, and ExB probe. Data from these probes were used to calculate utilization efficiencies from existing...USA Far-field plume measurements were performed on the X2 nested-channel Hall-effect thruster using an ar- ray of diagnostics, including a nude Faraday...mode to nested-channel mode by utilizing a traditional array of far-field diagnostics, which include a nude Faraday probe, retarding potential analyzer

Comparison between the effects of positive noncatastrophic HMB ESD stress in n-channel and p-channel power MOSFET's

NASA Astrophysics Data System (ADS)

Zupac, Dragan; Kosier, Steven L.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Baum, Keith W.

1991-10-01

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.

Temperature-dependent degradation mechanisms of threshold voltage in La2O3-gated n-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Wang, Ming-Tsong; Hsu, De-Cheng; Juan, Pi-Chun; Wang, Y. L.; Lee, Joseph Ya-min

2010-09-01

Metal-oxide-semiconductor capacitors and n-channel metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric were fabricated. The positive bias temperature instability was studied. The degradation of threshold voltage (ΔVT) showed an exponential dependence on the stress time in the temperature range from 25 to 75 °C. The degradation of subthreshold slope (ΔS) and gate leakage (IG) with stress voltage was also measured. The degradation of VT is attributed to the oxide trap charges Qot. The extracted activation energy of 0.2 eV is related to a degradation dominated by the release of atomic hydrogen in La2O3 thin films.

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

NASA Astrophysics Data System (ADS)

Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

2018-02-01

A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

NASA Astrophysics Data System (ADS)

Cywiński, G.; Yahniuk, I.; Kruszewski, P.; Grabowski, M.; Nowakowski-Szkudlarek, K.; Prystawko, P.; Sai, P.; Knap, W.; Simin, G. S.; Rumyantsev, S. L.

2018-03-01

We report on a design of fin-shaped channel GaN/AlGaN field-effect transistors developed for studying resonant terahertz plasma oscillations. Unlike common two dimensional FinFET transistor design, the gates were deposited only to the sides of the two dimensional electron gas channel, i.e., metal layers were not deposited on the top of the AlGaN. This side gate configuration allowed us to electrically control the conductivity of the channel by changing its width while keeping the carrier density and mobility virtually unchanged. Computer simulations and analytical model describe well the general shape of the characteristics. The side gate control of the channel width of these transistors allowed us to eliminate the so-called oblique plasma wave modes and paves the way towards future terahertz detectors and emitters using high quality factor plasma wave resonances.

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = -1 V) and highmore » I on /I off ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.« less

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

DOE PAGES

Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela; ...

2017-09-21

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1 μA at V d = -1 V) and highmore » I on /I off ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.« less

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.

PubMed

Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela; Shi, Wu; Lee, Kyunghoon; Wu, Shuang; Yong Choi, Byung; Braganza, Rohit; Lear, Jordan; Kau, Nicholas; Choi, Wonwoo; Chen, Chen; Pedramrazi, Zahra; Dumslaff, Tim; Narita, Akimitsu; Feng, Xinliang; Müllen, Klaus; Fischer, Felix; Zettl, Alex; Ruffieux, Pascal; Yablonovitch, Eli; Crommie, Michael; Fasel, Roman; Bokor, Jeffrey

2017-09-21

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch  ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on  > 1 μA at V d  = -1 V) and high I on /I off  ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps. Here, the authors use a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 10 5 on-off current ratio.

Ideal Channel Field Effect Transistors

DTIC Science & Technology

2010-03-01

well as on /?-GaAs/w-GaAs homojunctions grown by molecular beam epitaxy (MBE). The diode I-Vs at reverse bias are plotted below. The measured breakdown...transistors and composite channel InAlAs/InGaAs/lnP/InAlAs high electron mobility transistors ( HEMTs ), which have taken the full advantage of the matched...result in a large number of dislocations in GaAs films epitaxially grown on wurtzite GaN. In this work, we have successfully integrated GaAs with GaN

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

PubMed Central

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; Bergstrom, Paul L.; Banyai, Douglas; Savaikar, Madhusudan A.; Jaszczak, John A.; Yap, Yoke Khin

2016-01-01

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending. PMID:26846587

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

DOE PAGES

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; ...

2016-02-05

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under variousmore » bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (insitu STM-TEM). Ultimately, as suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.« less

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under variousmore » bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (insitu STM-TEM). Ultimately, as suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.« less

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors.

PubMed

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; Bergstrom, Paul L; Banyai, Douglas; Savaikar, Madhusudan A; Jaszczak, John A; Yap, Yoke Khin

2016-02-05

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.

Graphene oxide-zinc oxide nanocomposite as channel layer for field effect transistors: effect of ZnO loading on field effect transport.

PubMed

Jilani, S Mahaboob; Banerji, Pallab

2014-10-08

The effects of ZnO on graphene oxide (GO)-ZnO nanocomposites are investigated to tune the conductivity in GO under field effect regime. Zinc oxides with different concentrations from 5 wt % to 25 wt % are used in a GO matrix to increase the conductivity in the composite. Six sets of field effect transistors with pristine GO and GO-ZnO as the channel layer at varying ZnO concentrations were fabricated. From the transfer characteristics, it is observed that GO exhibited an insulating behavior and the transistors with low ZnO (5 wt %) concentration initially showed p-type conductivity that changes to n-type with increases in ZnO loading. This n-type dominance in conductivity is a consequence of the transfer of electrons from ZnO to the GO matrix. From X-ray photoelectron spectroscopic measurements, it is observed that the progressive reduction in the C-OH oxygen group took place with increases in ZnO loading. Thus, from insulating GO to p- and then n-type, conductivity in GO could be achieved with reduction in the C-OH oxygen group by photocatalytic reduction of GO with varying degrees of ZnO. The restoration of sp(2) electron network in the GO matrix with the anchoring of ZnO nanostructures was observed from Raman spectra. From UV-visible spectra, the band gap in pristine GO was found to be 3.98 eV and reduced to 2.8 eV with increase in ZnO attachment.

Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction

NASA Astrophysics Data System (ADS)

Wang, Hongjuan; Han, Genquan; Jiang, Xiangwei; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

2017-04-01

In this work, the boosting effect on the performance of GeSn n-channel fin tunneling FET (nFinTFET) enabled by uniaxial tensile stress is investigated theoretically. As the fin rotates within the (001) plane, the uniaxial tensile stress is always along its direction. The electrical characteristics of tensile-stressed GeSn nFinTFETs with point and line tunneling modes are computed utilizing the technology computer aided design (TCAD) simulator in which the dynamic nonlocal band-to-band tunneling (BTBT) algorithm is employed. In comparison with the relaxed devices, tensile-stressed GeSn nFinTFETs achieve a substantial enhancement in band-to-band tunneling generation rate (G BTBT) and on-state current I ON owing to the reduced bandgap E G induced by the tensile stress. Performance improvement of GeSn nFinTFETs induced by tensile stress demonstrates a strong dependence on channel direction and tunneling modes. Under the same magnitude of stress, line-nFinTFETs obtain a more pronounced I ON enhancement over the transistors with point tunneling mode.

Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladysiewicz, M., E-mail: marta.gladysiewicz@pwr.edu.pl; Janicki, L.; Kudrawiec, R.

2015-12-28

Electric field distribution in N-polar GaN(channel)/AlGaN/GaN(buffer) heterostructures was studied theoretically by solving Schrodinger and Poisson equations in a self-consistent manner for various boundary conditions and comparing results of these calculations with experimental data, i.e., measurements of electric field in GaN(channel) and AlGaN layers by electromodulation spectroscopy. A very good agreement between theoretical calculations and experimental data has been found for the Fermi-level located at ∼0.3 eV below the conduction band at N-polar GaN surface. With this surface boundary condition, the electric field distribution and two dimensional electron gas concentration are determined for GaN(channel)/AlGaN/GaN(buffer) heterostructures of various thicknesses of GaN(channel) and AlGaNmore » layers.« less

95 MeV oxygen ion irradiation effects on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ke, S. C.; Siddappa, K.

2003-09-01

The N-channel metal oxide semiconductor field effect transistors (MOSFETs) were exposed to 95 MeV oxygen ions, in the fluence range of 5 x 10(10) to 5 x 10(13) ions/cm(2). The influence of ion irradiation on threshold voltage (V-TH), linear drain current (I-DLin), leakage current (I-L), drain conductance (g(D)), transconductance (g(m)), mobility (mu) and drain saturation current (I-DSat) of MOSFETs was studied systematically for various fluence. The V-TH of the irradiated MOSFET was found to decrease significantly after irradiation. The interface (N-it) and oxide trapped charge (N-ot) were estimated from the subthreshold measurements and were found to increase after irradiation. The densities of oxide-trapped (DeltaN(it)) charge in irradiated MOSFETs were found to he higher than those of the interface trapped charge (DeltaN(ot)). The I-DLin and I-Dsat of MOSFETs were also found to decrease significantly after irradiation. Studies on effects of 95 MeV oxygen ion irradiation on g(m), g(D) and mu show a degradation varying front 70 to 75% after irradiation. The mobility degradation coefficients for N-it(alpha(it)) and N-ot(alpha(it)) were estimated. The results of these studies are presented and discussed.

Analysis of long-channel nanotube field-effect-transistors (NT FETs)

NASA Technical Reports Server (NTRS)

Toshishige, Yamada; Kwak, Dochan (Technical Monitor)

2001-01-01

This viewgraph presentation provides an analysis of long-channel nanotube (NT) field effect transistors (FET) from NASA's Ames Research Center. The structure of such a transistor including the electrode contact, 1D junction, and the planar junction is outlined. Also mentioned are various characteristics of a nanotube tip-equipped scanning tunnel microscope (STM).

Effect of matching between the magnetic field and channel length on the performance of low sputtering Hall thrusters

NASA Astrophysics Data System (ADS)

Ding, Yongjie; Boyang, Jia; Sun, Hezhi; Wei, Liqiu; Peng, Wuji; Li, Peng; Yu, Daren

2018-02-01

Discharge characteristics of a non-wall-loss Hall thruster were studied under different channel lengths using a design based on pushing a magnetic field through a double permanent magnet ring. The effect of different magnetic field intensities and channel lengths on ionization, efficiency, and plume divergence angle were studied. The experimental results show that propellant utilization is improved for optimal matching between the magnetic field and channel length. While matching the magnetic field and channel length, the ionization position of the neutral gas changes. The ion flow is effectively controlled, allowing the thrust force, specific impulse, and efficiency to be improved. Our study shows that the channel length is an important design parameter to consider for improving the performance of non-wall-loss Hall thrusters.

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hennig, J., E-mail: jonas.hennig@ovgu.de; Dadgar, A.; Witte, H.

2015-07-15

We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices.more » Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.« less

In-situ SiN{sub x}/InN structures for InN field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zervos, Ch., E-mail: hzervos@physics.uoc.gr; Georgakilas, A.; Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete

Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performancemore » was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.« less

Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

PubMed

Kagan; Mitzi; Dimitrakopoulos

1999-10-29

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

Hall effect mobility for SiC MOSFETs with increasing dose of nitrogen implantation into channel region

NASA Astrophysics Data System (ADS)

Noguchi, Munetaka; Iwamatsu, Toshiaki; Amishiro, Hiroyuki; Watanabe, Hiroshi; Kita, Koji; Yamakawa, Satoshi

2018-04-01

The Hall effect mobility (μHall) of the Si-face 4H-SiC metal–oxide–semiconductor field effect transistor (MOSFET) with a nitrogen (N)-implanted channel region was investigated by increasing the N dose. The μHall in the channel region was systematically examined regarding channel structures, that is, the surface and buried channels. It was experimentally demonstrated that increasing the N dose results in an improvement in μHall in the channel region due to the formation of the buried channel. However, further increase in N dose was found to decrease the μHall in the channel region, owing to the decrease in the electron mobility in the N-implanted bulk region.

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-06-01

In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

Dynamical coupled-channels study of {pi}N{yields}{pi}{pi}N reactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamano, H.; Julia-Diaz, B.; Department d'Estructura i Constituents de la Materia and Institut de Ciencies del Cosmos, Universitat de Barcelona E-08028 Barcelona

As a step toward performing a complete coupled-channels analysis of the world data of {pi}N,{gamma}*N{yields}{pi}N,{eta}N,{pi}{pi}N reactions, the {pi}N{yields}{pi}{pi}N reactions are investigated starting with the dynamical coupled-channels model developed in Phys. Rev. C 76, 065201 (2007). The channels included are {pi}N,{eta}N, and {pi}{pi}N which has {pi}{delta},{rho}N, and {sigma}N resonant components. The nonresonant amplitudes are generated from solving a set of coupled-channels equations with the meson-baryon potentials defined by effective Lagrangians. The resonant amplitudes are generated from 16 bare excited nucleon (N*) states that are dressed by the nonresonant interactions as constrained by the unitarity condition. The data of total cross sectionsmore » and {pi}N and {pi}{pi} invariant mass distributions of {pi}{sup +}p{yields}{pi}{sup +}{pi}{sup +}n,{pi}{sup +}{pi}{sup 0}p and {pi}{sup -}p{yields}{pi}{sup +}{pi}{sup -}n,{pi}{sup -}{pi}{sup 0}p,{pi}{sup 0}{pi}{sup 0}n reactions from threshold to the invariant mass W=2 GeV can be described to a very large extent. We show the importance of the coupled-channels effects and the strong interference among the contributions from the {pi}{delta},{sigma}N, and {rho}N channels. The large interference between the resonant and nonresonant amplitudes is also demonstrated. Possible future developments are discussed.« less

Dynamical coupled-channels study of pi N --> pi pi N reactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamano, Hiroyuki; Julia Diaz, Bruno; Lee, Tsung-Shung

2009-01-01

As a step toward performing a complete coupled-channels analysis of the world data of pi N, gamma^* N --> pi N, eta N, pi pi N reactions, the pi N --> pi pi N reactions are investigated starting with the dynamical coupled-channels model developed in Phys. Rev. C76, 065201 (2007). The channels included are pi N, eta N, and pi pi N which has pi Delta, rho N, and sigma N resonant components. The non-resonant amplitudes are generated from solving a set of coupled-channels equations with the meson-baryon potentials defined by effective Lagrangians. The resonant amplitudes are generated from 16more » bare excited nucleon (N^*) states which are dressed by the non-resonant interactions as constrained by the unitarity condition. The available total cross section data of pi^+ p --> pi^+ pi^+ n, pi^+ pi^0 and pi^- p --> pi^+ pi^- n, pi^- pi^0 n, pi^0 pi^0 n can be reproduced to a very large extent both in magnitudes and energy-dependence. Possible improvements of the model are investigated, in p« less

Effect of surface bilayer charges on the magnetic field around ionic channels

NASA Astrophysics Data System (ADS)

Gomes Soares, Marília Amável; Cortez, Celia Martins; Oliveira Cruz, Frederico Alan de; Silva, Dilson

2017-01-01

In this work, we present a physic-mathematical model for representing the ion transport through membrane channels, in special Na+ and K+-channels, and discuss the influence of surface bilayer charges on the magnetic field behavior around the ionic current. The model was composed of a set of equations, including: a nonlinear differential Poisson-Boltzmann equation which usually allows to estimate the surface potentials and electric potential profile across membrane; equations for the ionic flux through channel and the ionic current density based on Armstrong's model for Na+ and K+ permeability and other Physics concepts; and a magnetic field expression derived from the classical Ampère equation. Results from computational simulations using the finite element method suggest that the ionic permeability is strongly dependent of surface bilayer charges, the current density through a K+-channel is very less sensible to temperature changes than the current density through a Na+- channel, active Na+-channels do not directly interfere with the K+-channels around, and vice-versa, since the magnetic perturbation generated by an active channel is of short-range.

Dynamical coupled-channels study of {pi}N {right arrow} {pi pi}N reactions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamano, H.; Julia-Diaz, B.; Lee, T.-S. H.

As a step toward performing a complete coupled-channels analysis of the world data of {pi}N,{gamma}*N {yields} {pi}N,{eta}N,{pi}{pi}N reactions, the {pi}N {yields} {pi}{pi}N reactions are investigated starting with the dynamical coupled-channels model developed in Phys. Rev. C 76, 065201 (2007). The channels included are {pi}N,{eta}N, and {pi}{pi}N which has {pi}{Delta},{rho}N, and {sigma}N resonant components. The nonresonant amplitudes are generated from solving a set of coupled-channels equations with the meson-baryon potentials defined by effective Lagrangians. The resonant amplitudes are generated from 16 bare excited nucleon (N*) states that are dressed by the nonresonant interactions as constrained by the unitarity condition. The datamore » of total cross sections and {pi}N and {pi}{pi} invariant mass distributions of {pi} + p {yields} {pi} + {pi} + n, {pi} + {pi}0p and {pi} - p {yields} {pi} + {pi} - n, {pi} - {pi}0p,{pi}0{pi}0n reactions from threshold to the invariant mass W = 2 GeV can be described to a very large extent. We show the importance of the coupled-channels effects and the strong interference among the contributions from the {pi}{Delta},{sigma}N, and {rho}N channels. The large interference between the resonant and nonresonant amplitudes is also demonstrated. Possible future developments are discussed.« less

Effects of magnetic field strength in the discharge channel on the performance of a multi-cusped field thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Peng; Liu, Hui; Gao, Yuanyuan

The performance characteristics of a Multi-cusped Field Thruster depending on the magnetic field strength in the discharge channel were investigated. Four thrusters with different outer diameters of the magnet rings were designed to change the magnetic field strength in the discharge channel. It is found that increasing the magnetic field strength could restrain the radial cross-field electron current and decrease the radial width of main ionization region, which gives rise to the reduction of propellant utilization and thruster performance. The test results in different anode voltage conditions indicate that both the thrust and anode efficiency are higher for the weakermore » magnetic field in the discharge channel.« less

Effects of maize cultivation on nitrogen and phosphorus loadings to drainage channels in Central Chile.

PubMed

Corradini, Fabio; Nájera, Francisco; Casanova, Manuel; Tapia, Yasna; Singh, Ranvir; do Salazar, Osval

2015-11-01

There are concerns about the impact of maize cultivation with high applications of nitrogen (N) and phosphorus (P) on water quality in surface waters in Mediterranean Central Chile. This study estimated the contribution of N and P from maize fields to nearby drainage channels and evaluated the effects in water quality. An N and P budget was drawn up for three fields managed with a maize-fallow system, El Maitén (20.7 ha), El Naranjal (14.9 ha) and El Caleuche (4.2 ha), and water quality variables (pH, EC, dissolved oxygen, total solids, turbidity, NO3-N, NH4-N, PO4(3-), COD, total N, total P and sulphate) were monitored in nearby drainage channels. The N and P balances for the three fields indicated a high risk of N and P non-point source pollution, with fertiliser management, soil texture and climate factors determining the temporal variations in water quality parameters. Elevated levels of NH4-N and PO4(3-) in the drainage channels were usually observed during the winter period, while NO3- concentrations did not show a clear tendency. The results suggest that excessive slurry application during winter represents a very high risk of N and P runoff to drainage channels. Overall, great emphasis must be placed on good agronomic management of fields neighbouring drainage channels, including accurately calculating N and P fertiliser rates and establishing mitigation measures.

Effects of Dike Fields on Channel Characteristics of the Lower Missiszippi River

NASA Astrophysics Data System (ADS)

Simon, A.; Biedenharn, D. S.; Danis, N.; Little, C. D.

2017-12-01

Dike systems along the Lower Mississippi River have been functioning as intended through the mid-1990s. Measures of main-channel depth, which are primary metrics to evaluate the effectiveness of the dike fields show significant increases at both +0 and +35 Low Water Reference Plane (LWRP). Median values for the two conditions (+0 and +35 LWRP) show increases of 19.0 and 28.8%, respectively. Main-channel depths at +0 LWRP were in the 25- to 26-ft range, indicating that main-channel depths in the dike-system reaches have been maintained well above the minimum 9-ft value required. Increases in average boundary shear stress of about 8 and 18% for the whole channel and main channel at +35 LWRP, respectively, reflect increases in sediment-transport capacity. The effectiveness of the dike systems in reducing the need for maintenance dredging is supported by the inverse relation between the amount of dredging and the cumulative length of constructed dikes. Maintenance dredging peaked in the late 1960s at about 60 million cubic yards (yd3) in the Memphis and Vicksburg Districts and decreased to about 4 million yd3 by 2003, a reduction of about 93%. Cases where total conveyance has decreased appear to result from longer-termed, broad adjustment processes related to other factors including the historical cutoff program along the Lower Mississippi River.

Photojunction field-effect transistor based on a colloidal quantum dot absorber channel layer.

PubMed

Adinolfi, Valerio; Kramer, Illan J; Labelle, André J; Sutherland, Brandon R; Hoogland, S; Sargent, Edward H

2015-01-27

The performance of photodetectors is judged via high responsivity, fast speed of response, and low background current. Many previously reported photodetectors based on size-tuned colloidal quantum dots (CQDs) have relied either on photodiodes, which, since they are primary photocarrier devices, lack gain; or photoconductors, which provide gain but at the expense of slow response (due to delayed charge carrier escape from sensitizing centers) and an inherent dark current vs responsivity trade-off. Here we report a photojunction field-effect transistor (photoJFET), which provides gain while breaking prior photoconductors' response/speed/dark current trade-off. This is achieved by ensuring that, in the dark, the channel is fully depleted due to a rectifying junction between a deep-work-function transparent conductive top contact (MoO3) and a moderately n-type CQD film (iodine treated PbS CQDs). We characterize the rectifying behavior of the junction and the linearity of the channel characteristics under illumination, and we observe a 10 μs rise time, a record for a gain-providing, low-dark-current CQD photodetector. We prove, using an analytical model validated using experimental measurements, that for a given response time the device provides a two-orders-of-magnitude improvement in photocurrent-to-dark-current ratio compared to photoconductors. The photoJFET, which relies on a junction gate-effect, enriches the growing family of CQD photosensitive transistors.

Dependence of interface charge trapping on channel engineering in pentacene field effect transistors.

PubMed

Lee, Sunwoo; Park, Junghyuck; Park, In-Sung; Ahn, Jinho

2014-07-01

We investigate the dependence of charge carrier mobility by trap states at various interface regions through channel engineering. Prior to evaluation of interface trap density, the electrical performance in pentaene field effect transistors (FET) with high-k gate oxide are also investigated depending on four channel engineering. As a channel engineering, gas treatment, coatings of thin polymer layer, and chemical surface modification using small molecules were carried out. After channel engineering, the performance of device as well as interface trap density calculated by conductance method are remarkably improved. It is found that the reduced interface trap density is closely related to decreasing the sub-threshold swing and improving the mobility. Particularly, we also found that performance of device such as mobility, subthreshold swing, and interface trap density after gas same is comparable to those of OTS.

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

NASA Astrophysics Data System (ADS)

Maitra, Kingsuk; Frank, Martin M.; Narayanan, Vijay; Misra, Veena; Cartier, Eduard A.

2007-12-01

We report low temperature (40-300 K) electron mobility measurements on aggressively scaled [equivalent oxide thickness (EOT)=1 nm] n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with HfO2 gate dielectrics and metal gate electrodes (TiN). A comparison is made with conventional nMOSFETs containing HfO2 with polycrystalline Si (poly-Si) gate electrodes. No substantial change in the temperature acceleration factor is observed when poly-Si is replaced with a metal gate, showing that soft optical phonons are not significantly screened by metal gates. A qualitative argument based on an analogy between remote phonon scattering and high-resolution electron energy-loss spectroscopy (HREELS) is provided to explain the underlying physics of the observed phenomenon. It is also shown that soft optical phonon scattering is strongly damped by thin SiO2 interface layers, such that room temperature electron mobility values at EOT=1 nm become competitive with values measured in nMOSFETs with SiON gate dielectrics used in current high performance processors.

Effects of Magnetic field on Peristalsis transport of a Carreau Fluid in a tapered asymmetric channel

NASA Astrophysics Data System (ADS)

Prakash, J.; Balaji, N.; Siva, E. P.; Kothandapani, M.; Govindarajan, A.

2018-04-01

The paper is concerned with effects of a uniform applied magnetic field on a Carreau fluid flow in a tapered asymmetric channel with peristalsis. The channel non-uniform & asymmetry are formed by choosing the peristaltic wave train on the tapered walls to have different amplitude and phase (ϕ). The governing equations of the Carreau model in two - dimensional peristaltic flow phenomena are constructed under assumptions of long wave length and low Reynolds number approximations. The simplified non - linear governing equations are solved by regular perturbation method. The expressions for pressure rise, frictional force, velocity and stream function are determined and the effects of different parameters like non-dimensional amplitudes walls (a and b), non - uniform parameter (m), Hartmann number (M), phase difference (ϕ),power law index (n) and Weissenberg numbers (We) on the flow characteristics are discussed. It is viewed that the rheological parameter for large (We), the curves of the pressure rise are not linear but it behaves like a Newtonian fluid for very small Weissenberg number.

Complementary junction heterostructure field-effect transistor

DOEpatents

Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

1995-01-01

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

Complementary junction heterostructure field-effect transistor

DOEpatents

Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

1995-12-26

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming

NASA Astrophysics Data System (ADS)

Wang, Xiao; Shen, Zhihua; Wu, Shengli; Zhang, Jintao

2017-06-01

Vacuum field-effect transistors (VFETs) with channel lengths down to 500 nm (i.e., the deep submicron scale) were fabricated with the mature technology of the surface conduction electron emitter fabrication process in our former experiments. The vacuum channel of this new VFET was generated by using the electro-forming process. During electro-forming, the joule heat cracks the conductive film and then generates the submicron scale gap that serves as the vacuum channel. The gap separates the conductive film into two plane-to-plane electrodes, which serve as a source (cathode) electrode and a drain (anode) electrode of the VFET, respectively. Experimental results reveal that the fabricated device demonstrates a clear triode behavior of the gate modulation. Fowler-Nordheim theory was used to analyze the electron emission mechanism and operating principle of the device.

Large conductance Ca(2+)-activated K(+) channel (BKCa) activating properties of a series of novel N-arylbenzamides: Channel subunit dependent effects.

PubMed

Kirby, R W; Martelli, A; Calderone, V; McKay, N G; Lawson, K

2013-07-15

Large conductance calcium activated potassium channels (BKCa) are fundamental in the control of cellular excitability. Thus, compounds that activate BKCa channels could provide potential therapies in the treatment of pathologies of the cardiovascular and central nervous system. A series of novel N-arylbenzamide compounds, and the reference compound NS1619, were evaluated for BKCa channel opener properties in Human Embryonic Kidney (HEK293) cells expressing the human BKCa channel α-subunit alone or α+β1-subunit complex. Channel activity was determined using a non-radioactive Rb(+) efflux assay to construct concentration effect curves for each compound. All N-arylbenzamide compounds and NS1619 evoked significant (p <0.05) concentration related increases in Rb(+) efflux both in cells expressing α-subunit alone or α+β1-subunits. Co-expression of the β1-subunit modified the Rb(+) efflux responses, relative to that obtained in cells expressing the α-subunit alone, for most of the N-arylbenzamide compounds, in contrast to NS1619. The EC40 values of NS1619, BKMe1 and BKOEt1 were not significantly affected by the co-expression of the BKCa channel α+β1-subunits. In contrast, 5 other N-arylbenzamides (BKPr2, BKPr3, BKPr4, BKH1 and BKVV) showed a significant (p <0.05) 2- to 10-fold increase in EC40 values when tested on the BKCa α+β1-subunit expressing cells compared to BKCa α-subunit expressing cells. Further, the Emax values for BKPr4, BKVV and BKH1 were lower in the BKCa channel α+β1-subunit expressing cells. In conclusion, the N-arylbenzamides studied, like NS1619, were able to activate BKCa channels formed of the α-subunit only. The co-expression of the β1-subunit, however, modified the ability of certain compounds to active the channel leading to differentiated pharmacodynamic profiles. Copyright © 2013 Elsevier Ltd. All rights reserved.

Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2015-07-21

Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

NASA Astrophysics Data System (ADS)

Shin, Yong Hyeon; Bae, Min Soo; Park, Chuntaek; Park, Joung Won; Park, Hyunwoo; Lee, Yong Ju; Yun, Ilgu

2018-06-01

A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young’s approximation based solution for one-dimensional Poisson’s equations the total inversion charge density (Q inv ) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel’s surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons.

PubMed

Passi, Vikram; Gahoi, Amit; Senkovskiy, Boris V; Haberer, Danny; Fischer, Felix R; Grüneis, Alexander; Lemme, Max C

2018-03-28

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum I ON / I OFF current ratio of 87.5.

Electromagnetic fields (UHF) increase voltage sensitivity of membrane ion channels; possible indication of cell phone effect on living cells.

PubMed

Ketabi, N; Mobasheri, H; Faraji-Dana, R

2015-03-01

The effects of ultra high frequency (UHF) nonionizing electromagnetic fields (EMF) on the channel activities of nanopore forming protein, OmpF porin, were investigated. The voltage clamp technique was used to study the single channel activity of the pore in an artificial bilayer in the presence and absence of the electromagnetic fields at 910 to 990 MHz in real time. Channel activity patterns were used to address the effect of EMF on the dynamic, arrangement and dielectric properties of water molecules, as well as on the hydration state and arrangements of side chains lining the channel barrel. Based on the varied voltage sensitivity of the channel at different temperatures in the presence and absence of EMF, the amount of energy transferred to nano-environments of accessible groups was estimated to address the possible thermal effects of EMF. Our results show that the effects of EMF on channel activities are frequency dependent, with a maximum effect at 930 MHz. The frequency of channel gating and the voltage sensitivity is increased when the channel is exposed to EMF, while its conductance remains unchanged at all frequencies applied. We have not identified any changes in the capacitance and permeability of membrane in the presence of EMF. The effect of the EMF irradiated by cell phones is measured by Specific Absorption Rate (SAR) in artificial model of human head, Phantom. Thus, current approach applied to biological molecules and electrolytes might be considered as complement to evaluate safety of irradiating sources on biological matter at molecular level.

Role of N-type calcium channels in autonomic neurotransmission in guineapig isolated left atria

PubMed Central

Serone, Adrian P; Angus, James A

1999-01-01

Calcium entry via neuronal calcium channels is essential for the process of neurotransmission. We investigated the calcium channel subtypes involved in the operation of cardiac autonomic neurotransmission by examining the effects of selective calcium channel blockers on the inotropic responses to electrical field stimulation (EFS) of driven (4 Hz) guineapig isolated left atria. In this tissue, a previous report (Hong & Chang, 1995) found no evidence for N-type channels involved in the vagal negative inotropic response and only weak involvement in sympathetic responses. The effects of cumulative concentrations of the selective N-type calcium channel blocker, ω-conotoxin GVIA (GVIA; 0.1–10 nM) and the nonselective N-, P/Q-type calcium channel blocker, ω-conotoxin MVIIC (MVIIC; 0.01–10 nM) were examined on the positive (with atropine, 1 μM present) and negative (with propranolol, 1 μM and clonidine, 1 μM present) inotropic responses to EFS (eight trains, each train four pulses per punctate stimulus). GVIA caused complete inhibition of both cardiac vagal and sympathetic inotropic responses to EFS. GVIA was equipotent at inhibiting positive (pIC50 9.29±0.08) and negative (pIC50 9.13±0.17) inotropic responses. MVIIC also mediated complete inhibition of inotropic responses to EFS and was 160 and 85 fold less potent than GVIA at inhibiting positive (pIC50 7.08±0.10) and negative (pIC50 7.20±0.14) inotropic responses, respectively. MVIIC was also equipotent at inhibiting both sympathetic and vagal responses. Our data demonstrates that N-type calcium channels account for all the calcium current required for cardiac autonomic neurotransmission in the guinea-pig isolated left atrium. PMID:10433500

Investigation of InP/In0.65Ga0.35As metamorphic p-channel doped-channel field-effect transistor

NASA Astrophysics Data System (ADS)

Tsai, Jung-Hui

2016-07-01

In this article, the device mechanism and characteristics of InP/InGaAs metamorphic p-channel field-effect transistor (FET), which has a high indium mole fraction of InGaAs channel, grown on the GaAs substrate is demonstrated. The device was fabricated on the top of the InxGa1-xP graded metamorphic buffer layer, and the In0.65Ga0.35As pseudomorphic channel was employed to elevate the transistor performance. For the p-type FET, due to the considerably large valence band discontinuity at InP/In0.65Ga0.35As heterojunction and a relatively thin as well as heavily doped pseudomorphic In0.65Ga0.35As channel between two undoped InP layers, a maximum extrinsic transconductance of 27.3 mS/mm and a maximum saturation current density of -54.3 mA/mm are obtained. Consequently, the studied metamorphic FET is suitable for the development in signal amplification, integrated circuits, and low supply-voltage complementary logic inverters.

AlGaN Channel Transistors for Power Management and Distribution

NASA Technical Reports Server (NTRS)

VanHove, James M.

1996-01-01

Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors

NASA Astrophysics Data System (ADS)

Lee, Sunghwan; Song, Yang; Park, Hongsik; Zaslavsky, A.; Paine, D. C.

2017-09-01

Amorphous oxide semiconductors (AOSs) based on indium oxides are of great interest for next generation ultra-high definition displays that require much smaller pixel driving elements. We describe the scaling behavior in amorphous InZnO thin film transistors (TFTs) with a significant decrease in the extracted field-effect mobility μFE with channel length L (from 39.3 to 9.9 cm2/V·s as L is reduced from 50 to 5 μm). Transmission line model measurements reveal that channel scaling leads to a significant μFE underestimation due to contact resistance (RC) at the metallization/channel interface. Therefore, we suggest a method of extracting correct μFE when the TFT performance is significantly affected by RC. The corrected μFE values are higher (45.4 cm2/V·s) and nearly independent of L. The results show the critical effect of contact resistance on μFE measurements and suggest strategies to determine accurate μFE when a TFT channel is scaled.

Temperature dependence of single-event burnout in n-channel power MOSFET's

NASA Astrophysics Data System (ADS)

Johnson, G. H.; Schrimpf, R. D.; Galloway, K. F.; Koga, R.

1994-03-01

The temperature dependence of single-event burnout (SEB) in n-channel power metal-oxide-semiconductor field effect transistors (MOSFET's) is investigated experimentally and analytically. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. This model is shown to agree with the experimental trends.

N- and P-type Ca2+ channels are involved in acetylcholine release at a neuroneuronal synapse: only the N-type channel is the target of neuromodulators.

PubMed Central

Fossier, P; Baux, G; Tauc, L

1994-01-01

Cholinergic transmission in an identified neuro-neuronal synapse of the Aplysia buccal ganglion was depressed by application of a partially purified extract of the funnel-web-spider venom (FTx) or of its synthetic analog (sFTx). This specific blocker of voltage-dependent P-type Ca2+ channels did not interfere with the effect of the N-type Ca2+ channel blocker omega-conotoxin, which could further decrease synaptic transmission after a previous application of FTx. Similar results were obtained when the reversal order of application of these two Ca2+ channel blockers was used. Both P- and N-type Ca2+ currents trigger acetylcholine release in the presynaptic neuron. The neuromodulatory effects of FMRF-amide, histamine, and buccalin on transmitter release disappeared after the blockade of the N-type Ca2+ channels but remained still effective in the presence of FTx. These results indicate that only N-type Ca2+ channels appear to be sensitive to the neuromodulators we have identified. PMID:7910963

N- and P-type Ca2+ channels are involved in acetylcholine release at a neuroneuronal synapse: only the N-type channel is the target of neuromodulators.

PubMed

Fossier, P; Baux, G; Tauc, L

1994-05-24

Cholinergic transmission in an identified neuro-neuronal synapse of the Aplysia buccal ganglion was depressed by application of a partially purified extract of the funnel-web-spider venom (FTx) or of its synthetic analog (sFTx). This specific blocker of voltage-dependent P-type Ca2+ channels did not interfere with the effect of the N-type Ca2+ channel blocker omega-conotoxin, which could further decrease synaptic transmission after a previous application of FTx. Similar results were obtained when the reversal order of application of these two Ca2+ channel blockers was used. Both P- and N-type Ca2+ currents trigger acetylcholine release in the presynaptic neuron. The neuromodulatory effects of FMRF-amide, histamine, and buccalin on transmitter release disappeared after the blockade of the N-type Ca2+ channels but remained still effective in the presence of FTx. These results indicate that only N-type Ca2+ channels appear to be sensitive to the neuromodulators we have identified.

Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor.

PubMed

Jeon, Pyo Jin; Lee, Young Tack; Lim, June Yeong; Kim, Jin Sung; Hwang, Do Kyung; Im, Seongil

2016-02-10

Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of ∼10(4) in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.

High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

NASA Astrophysics Data System (ADS)

Oh, Seung Kyu; Cho, Moon Uk; Dallas, James; Jang, Taehoon; Lee, Dong Gyu; Pouladi, Sara; Chen, Jie; Wang, Weijie; Shervin, Shahab; Kim, Hyunsoo; Shin, Seungha; Choi, Sukwon; Kwak, Joon Seop; Ryou, Jae-Hyun

2017-09-01

We investigate thermo-electronic behaviors of flexible AlGaN/GaN heterostructure field-effect transistors (HFETs) for high-power operation of the devices using Raman thermometry, infrared imaging, and current-voltage characteristics. A large negative differential conductance observed in HFETs on polymeric flexible substrates is confirmed to originate from the decreasing mobility of the two-dimensional electron gas channel caused by the self-heating effect. We develop high-power transistors by suppressing the negative differential conductance in the flexible HFETs using chemical lift-off and modified Ti/Au/In metal bonding processes with copper (Cu) tapes for high thermal conductivity and low thermal interfacial resistance in the flexible hybrid structures. Among different flexible HFETs, the ID of the HFETs on Cu with Ni/Au/In structures decreases only by 11.3% with increasing drain bias from the peak current to the current at VDS = 20 V, which is close to that of the HFETs on Si (9.6%), solving the problem of previous flexible AlGaN/GaN transistors.

n-Alcohols Inhibit Voltage-Gated Na+ Channels Expressed in Xenopus Oocytes

PubMed Central

Horishita, Takafumi; Harris, R. Adron

2008-01-01

Voltage-gated sodium channels are essential for the initiation and propagation of action potentials in excitable cells and are known as a target of local anesthetics. In addition, inhibition of sodium channels by volatile anesthetics has been proposed as a mechanism of general anesthesia. The n-alcohols produce anesthesia, and their potency increases with carbon number until a “cut-off” is reached. In this study, we examined effects of a range of n-alcohols on Nav1.2 subunits to determine the alcohol cut-off for this channel. We also studied the effect of a short-chain alcohol (ethanol) and a long-chain alcohol (octanol) on Nav1.2, Nav1.4, Nav1.6, and Nav1.8 subunits, and we investigated the effects of alcohol on channel kinetics. Ethanol and octanol inhibited sodium currents of all subunits, and the inhibition of the Nav1.2 channel by n-alcohols indicated a cut-off at nonanol. Ethanol and octanol produced open-channel block, which was more pronounced for Nav1.8 than for the other sodium channels. Inhibition of Nav1.2 was due to decreased activation and increased inactivation. These results suggest that sodium channels may have a hydrophobic binding site for n-alcohols and demonstrate the differences in the kinetic mechanisms of inhibition for n-alcohols and inhaled anesthetics. PMID:18434586

Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance

NASA Astrophysics Data System (ADS)

Zhang, Yachao; Wang, Zhizhe; Xu, Shengrui; Chen, Dazheng; Bao, Weimin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue

2017-11-01

High quality InAlN/InGaN/InAlN/InGaN double channel heterostructures were proposed and grown by metal organic chemical vapor deposition. Benefiting from the adoption of the pulsed growth method and Two-Step AlN interlayer, the material quality and interface characteristics of the double channel heterostructures are satisfactory. The results of the temperature-dependent Hall effect measurement indicated that the transport properties of the double channel heterostructures were superior to those of the traditional single channel heterostructures in the whole test temperature range. Meanwhile, the sheet resistance of the double channel heterostructures reached 218.5 Ω/□ at 300 K, which is the record of InGaN-based heterostructures. The good transport properties of the InGaN double channel heterostructures are beneficial to improve the performance of the microwave power devices based on nitride semiconductors.

n-Channel semiconductor materials design for organic complementary circuits.

PubMed

Usta, Hakan; Facchetti, Antonio; Marks, Tobin J

2011-07-19

Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features are essential for a variety of next-generation electronic products, including low-power flexible displays, inexpensive radio frequency identification (RFID) tags, and printable sensors, among many other applications. Accordingly, the preparation of new materials based on π-conjugated organic molecules or polymers has been a central scientific and technological research focus over the past decade. Currently, p-channel (hole-transporting) materials are the leading class of organic semiconductors. In contrast, high-performance n-channel (electron-transporting) semiconductors are relatively rare, but they are of great significance for the development of plastic electronic devices such as organic field-effect transistors (OFETs). In this Account, we highlight the advances our team has made toward realizing moderately and highly electron-deficient n-channel oligomers and polymers based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons. We have synthesized and characterized a "library" of structurally related semiconductors, and we have investigated detailed structure-property relationships through optical, electrochemical, thermal, microstructural (both single-crystal and thin-film), and electrical measurements. Our results reveal highly informative correlations between structural parameters at various length scales and charge transport properties. We first discuss oligothiophenes functionalized with perfluoroalkyl and perfluoroarene substituents, which represent the initial examples of high-performance n-channel semiconductors developed in this project. The OFET characteristics of these compounds are presented with an

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

DOEpatents

Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

1984-04-19

In a field-effect transistor comprising a semiconductor having therein a source, a drain, a channel and a gate in operational relationship, there is provided an improvement wherein said semiconductor is a superlattice comprising alternating quantum well and barrier layers, the quantum well layers comprising a first direct gap semiconductor material which in bulk form has a certain bandgap and a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, the barrier layers comprising a second semiconductor material having a bandgap wider than that of said first semiconductor material, wherein the layer thicknesses of said quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice having a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, and wherein the thicknesses of said quantum well layers are selected to provide a superlattice curve of electron velocity versus applied electric field whereby, at applied electric fields higher than that at which the maximum electron velocity occurs in said first material when in bulk form, the electron velocities are higher in said superlattice than they are in said first semiconductor material in bulk form.

Cellular defibrillation: interaction of micro-scale electric fields with voltage-gated ion channels.

PubMed

Kargol, Armin; Malkinski, Leszek; Eskandari, Rahmatollah; Carter, Maya; Livingston, Daniel

2015-09-01

We study the effect of micro-scale electric fields on voltage-gated ion channels in mammalian cell membranes. Such micro- and nano-scale electric fields mimic the effects of multiferroic nanoparticles that were recently proposed [1] as a novel way of controlling the function of voltage-sensing biomolecules such as ion channels. This article describes experimental procedures and initial results that reveal the effect of the electric field, in close proximity of cells, on the ion transport through voltage-gated ion channels. We present two configurations of the whole-cell patch-clamping apparatus that were used to detect the effect of external stimulation on ionic currents and discuss preliminary results that indicate modulation of the ionic currents consistent with the applied stimulus.

Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors

DTIC Science & Technology

2013-11-25

a ballistic one-dimensional conductor is / = £>(£) ■ VgiE)[fR(E) - fdEME , (1) where Vg(E) is the group velocity, D(E) is the density of states... AEROSPACE REPORT NO. ATR-2013-01138 Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors...SCIENCES LABORATORIES The Aerospace Corporation functions as an "architect-engineer" for national security programs, specializing in advanced military

Characterization of Si3N4/SiO2 optical channel waveguides by photon scanning tunneling microscopy

NASA Technical Reports Server (NTRS)

Wang, Yan; Chudgar, Mona H.; Jackson, Howard E.; Miller, Jeffrey S.; De Brabander, Gregory N.; Boyd, Joseph T.

1993-01-01

Photon scanning tunneling microscopy (PSTM) is used to characterize Si3N4/Si02 optical channel waveguides being used for integrated optical-micromechanical sensors. PSTM utilizes an optical fiber tapered to a fine point which is piezoelectrically positioned to measure the decay of the evanescent field intensity associated with the waveguide propagating mode. Evanescent field decays are recorded for both ridge channel waveguides and planar waveguide regions. Values for the local effective refractive index are calculated from the data for both polarizations and compared to model calculations.

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures

Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region

NASA Astrophysics Data System (ADS)

Naderi, Ali

2016-01-01

A new structure for graphene nanoribbon field-effect transistors (GNRFETs) is proposed and investigated using quantum simulation with a nonequilibrium Green's function (NEGF) method. Tunneling leakage current and ambipolar conduction are known effects for MOSFET-like GNRFETs. To minimize these issues a novel structure with a simple change of the GNRFETs by using single halo pocket in the intrinsic channel region, "Single Halo GNRFET (SH-GNRFET)", is proposed. An appropriate halo pocket at source side of channel is used to modify potential distribution of the gate region and weaken band to band tunneling (BTBT). In devices with materials like Si in channel region, doping type of halo and source/drain regions are different. But, here, due to the smaller bandgap of graphene, the mentioned doping types should be the same to reduce BTBT. Simulations have shown that in comparison with conventional GNRFET (C-GNRFET), an SH-GNRFET with appropriately halo doping results in a larger ON current (Ion), smaller OFF current (Ioff), a larger ON-OFF current ratio (Ion/Ioff), superior ambipolar characteristics, a reduced power-delay product and lower delay time.

Calculation of the electron wave function in a graded-channel double-heterojunction modulation-doped field-effect transistor

NASA Technical Reports Server (NTRS)

Mui, D. S. L.; Patil, M. B.; Morkoc, H.

1989-01-01

Three double-heterojunction modulation-doped field-effect transistor structures with different channel composition are investigated theoretically. All of these transistors have an In(x)Ga(1-x)As channel sandwiched between two doped Al(0.3)Ga(0.7)As barriers with undoped spacer layers. In one of the structures, x varies from 0 from either heterojunction to 0.15 at the center of the channel quadratically; in the other two, constant values of x of 0 and 0.15 are used. The Poisson and Schroedinger equations are solved self-consistently for the electron wave function in all three cases. The results showed that the two-dimensional electron gas (2DEG) concentration in the channel of the quadratically graded structure is higher than the x = 0 one and slightly lower than the x = 0.15 one, and the mean distance of the 2DEG is closer to the center of the channel for this transistor than the other two. These two effects have important implications on the electron mobility in the channel.

A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects

NASA Astrophysics Data System (ADS)

Raksharam; Dutta, Aloke K.

2017-04-01

In this paper, a unified analytical model for the drain current of a symmetric Double-Gate Junctionless Field-Effect Transistor (DG-JLFET) is presented. The operation of the device has been classified into four modes: subthreshold, semi-depleted, accumulation, and hybrid; with the main focus of this work being on the accumulation mode, which has not been dealt with in detail so far in the literature. A physics-based model, using a simplified one-dimensional approach, has been developed for this mode, and it has been successfully integrated with the model for the hybrid mode. It also includes the effect of carrier mobility degradation due to the transverse electric field, which was hitherto missing in the earlier models reported in the literature. The piece-wise models have been unified using suitable interpolation functions. In addition, the model includes two most important short-channel effects pertaining to DG-JLFETs, namely the Drain Induced Barrier Lowering (DIBL) and the Subthreshold Swing (SS) degradation. The model is completely analytical, and is thus computationally highly efficient. The results of our model have shown an excellent match with those obtained from TCAD simulations for both long- and short-channel devices, as well as with the experimental data reported in the literature.

Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

NASA Astrophysics Data System (ADS)

Kizilyalli, I. C.; Aktas, O.

2015-12-01

There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

NASA Astrophysics Data System (ADS)

Takashima, Shinya; Ueno, Katsunori; Matsuyama, Hideaki; Inamoto, Takuro; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Nakagawa, Kiyokazu

2017-12-01

Lateral GaN MOSFETs on homoepitaxial p-GaN layers with different Mg doping concentrations ([Mg]) have been evaluated to investigate the impact of [Mg] on MOS channel properties. It is demonstrated that the threshold voltage (V th) can be controlled by [Mg] along with the theoretical curve. The field effect mobility also shows [Mg] dependence and a maximum field effect mobility of 123 cm2 V-1 s-1 is achieved on [Mg] = 6.5 × 1016 cm-3 layer with V th = 3.0 V. The obtained results indicate that GaN MOSFETs can be designed on the basis of the doping concentration of the p-GaN layer with promising characteristics for the realization of power MOSFETs.

Advanced Channeling Technologies in Plasma and Laser Fields

NASA Astrophysics Data System (ADS)

Dabagov, Sultan B.

2018-01-01

Channeling is the phenomenon well known in the world mostly related to the motion of the beams of charged particles in aligned crystals. However, recent studies have shown the feasibility of channeling phenomenology application for description of other various mechanisms of interaction of charged as well as neutral particle beams in solids, plasmas and electromagnetic fields covering the research fields from crystal based undulators, collimators and accelerators to capillary based X-ray and neutron optical elements. This brief review is devoted to the status of channeling-based researches at different centers within international and national collaborations. Present and future possible developments in channeling tools applied to electron interactions in strong plasma and laser fields will be analyzed.

Modulation of channel activity and gadolinium block of MscL by static magnetic fields.

PubMed

Petrov, Evgeny; Martinac, Boris

2007-02-01

The magnetic field of the Earth has for long been known to influence the behaviour and orientation of a variety of living organisms. Experimental studies of the magnetic sense have, however, been impaired by the lack of a plausible cellular and/or molecular mechanism providing meaningful explanation for detection of magnetic fields by these organisms. Recently, mechanosensitive (MS) ion channels have been implied to play a role in magnetoreception. In this study we have investigated the effect of static magnetic fields (SMFs) of moderate intensity on the activity and gadolinium block of MscL, the bacterial MS channel of large conductance, which has served as a model channel to study the basic physical principles of mechanosensory transduction in living cells. In addition to showing that direct application of the magnetic field decreased the activity of the MscL channel, our study demonstrates for the first time that SMFs can reverse the effect of gadolinium, a well-known blocker of MS channels. The results of our study are consistent with a notion that (1) the effects of SMFs on the MscL channels may result from changes in physical properties of the lipid bilayer due to diamagnetic anisotropy of phospholipid molecules and consequently (2) cooperative superdiamagnetism of phospholipid molecules under influence of SMFs could cause displacement of Gd(3+) ions from the membrane bilayer and thus remove the MscL channel block.

The effects of verapamil and diltiazem on N-, P- and Q-type calcium channels mediating dopamine release in rat striatum

PubMed Central

Dobrev, Dobromir; Milde, Alexander S; Andreas, Klaus; Ravens, Ursula

1999-01-01

The putative inhibitory effects of verapamil and diltiazem on neuronal non-L-type Ca2+ channels were studied by investigating their effects on either K+- or veratridine-evoked [3H]-dopamine ([3H]-DA) release in rat striatal slices. Involvement of N-, P- and Q-type channels was identified by sensitivity of [3H]-DA release to ω-conotoxin GVIA (ω-CTx-GVIA), ω-agatoxin IVA (ω-Aga-IVA) and ω-conotoxin MVIIC (ω-CTx-MVIIC), respectively.KCl (50 mM)-evoked [3H]-DA release was abolished in the absence of Ca2+, and was insensitive to dihydropyridines (up to 30 μM). It was significantly blocked by ω-CTx-GVIA (1 μM), ω-Aga-IVA (30 nM) and was confirmed to be abolished by ω-CTx-MVIIC (3 μM), indicating involvement of N-, P- and Q-type channel subtypes.Verapamil and diltiazem inhibited K+-evoked [3H]-DA release in a concentration-dependent manner. The inhibitory effects of verapamil or diltiazem (each 30 μM) were fully additive to the effect of ω-CTx-GVIA (1 μM), whereas co-application with ω-Aga-IVA (30 nM) produced similar effects to those of ω-Aga-IVA alone.As shown previously, veratridine-evoked [3H]-DA release in Ca2+ containing medium exclusively involves Q-type Ca2+ channels. Here, diltiazem (30 μM) did not inhibit veratridine-evoked [3H]-DA release, whereas verapamil (30 μM) partially inhibited it, indicating possible involvement of Q-type channels in verapamil-induced inhibition. However, verapamil (30 μM) inhibited this release even in the absence of extracellular Ca2+, suggesting that Na+ rather than Q-type Ca2+ channels are involved.Taken together, our results suggest that verapamil can block P- and at higher concentrations possibly N- and Q-type Ca2+ channels linked to [3H]-DA release, whereas diltiazem appears to block P-type Ca2+ channels only. PMID:10385261

Evaluation of the inhibitory effect of dihydropyridines on N-type calcium channel by virtual three-dimensional pharmacophore modeling.

PubMed

Ogihara, Takuo; Kano, Takashi; Kakinuma, Chihaya

2009-01-01

Currently, a new type of calcium channel blockers, which can inhibit not only L-type calcium channels abundantly expressed in vascular smooth muscles, but also N-type calcium channels that abound in the sympathetic nerve endings, have been developed. In this study, analysis on a like-for-like basis of the L- and N-type calcium channel-inhibitory activity of typical dihydropyridine-type calcium-channel blockers (DHPs) was performed. Moreover, to understand the differences of N-type calcium channel inhibition among DHPs, the binding of DHPs to the channel was investigated by means of hypothetical three-dimensional pharmacophore modeling using multiple calculated low-energy conformers of the DHPs. All of the tested compounds, i.e. cilnidipine (CAS 132203-70-4), efonidipine (CAS 111011-76-8), amlodipine (CAS 111470-99-6), benidipine (CAS 85387-35-5), azelnidipine (CAS 123524-52-7) and nifedipine (CAS 21829-25-4), potently inhibited the L-type calcium channel, whereas only cilnidipine inhibited the N-type calcium channel (IC50 value: 51.2 nM). A virtual three-dimensional structure of the N-type calcium channel was generated by using the structure of the peptide omega-conotoxin GVIA, a standard inhibitor of the channel, and cilnidipine was found to fit well into this pharmacophore model. Lipophilic potential maps of omega-conotoxin GVIA and cilnidipine supported this finding. Conformational overlay of cilnidipine and the other DHPs indicated that amlodipine and nifedipine were not compatible with the pharmacophore model because they did not contain an aromatic ring that was functionally equivalent to Tyr13 of omega-conotoxin GVIA. Azelnidipine, benidipine, and efonidipine, which have this type of aromatic ring, were not positively identified due to intrusions into the excluded volume. Estimation of virtual three-dimensional structures of proteins, such as ion channels, by using standard substrates and/or inhibitors may be a useful method to explore the mechanisms of

Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance

DOEpatents

Zolper, John C.; Sherwin, Marc E.; Baca, Albert G.

2000-01-01

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

Field-effect P-N junction

DOEpatents

Regan, William; Zettl, Alexander

2015-05-05

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

Structured-gate organic field-effect transistors

NASA Astrophysics Data System (ADS)

Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

2012-06-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

Saturation of conductance in single ion channels: the blocking effect of the near reaction field.

PubMed

Nadler, Boaz; Schuss, Zeev; Hollerbach, Uwe; Eisenberg, R S

2004-11-01

The ionic current flowing through a protein channel in the membrane of a biological cell depends on the concentration of the permeant ion, as well as on many other variables. As the concentration increases, the rate of arrival of bath ions to the channel's entrance increases, and typically so does the net current. This concentration dependence is part of traditional diffusion and rate models that predict Michaelis-Menten current-concentration relations for a single ion channel. Such models, however, neglect other effects of bath concentrations on the net current. The net current depends not only on the entrance rate of ions into the channel, but also on forces acting on ions inside the channel. These forces, in turn, depend not only on the applied potential and charge distribution of the channel, but also on the long-range Coulombic interactions with the surrounding bath ions. In this paper, we study the effects of bath concentrations on the average force on an ion in a single ion channel. We show that the force of the reaction field on a discrete ion inside a channel embedded in an uncharged lipid membrane contains a blocking (shielding) term that is proportional to the square root of the ionic bath concentration. We then show that different blocking strengths yield different behavior of the current-concentration and conductance-concentration curves. Our theory shows that at low concentrations, when the blocking force is weak, conductance grows linearly with concentration, as in traditional models, e.g., Michaelis-Menten formulations. As the concentration increases to a range of moderate shielding, conductance grows as the square root of concentration, whereas at high concentrations, with high shielding, conductance may actually decrease with increasing concentrations: the conductance-concentration curve can invert. Therefore, electrostatic interactions between bath ions and the single ion inside the channel can explain the different regimes of conductance

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed Central

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc. PMID:26039589

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc.

Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.

PubMed

Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Koo, Yong-Seo; Kim, Sangsig

2009-11-11

A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p+ drain and n+ channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

Highly effective action from large N gauge fields

NASA Astrophysics Data System (ADS)

Yang, Hyun Seok

2014-10-01

Recently Schwarz put forward a conjecture that the world-volume action of a probe D3-brane in an AdS5×S5 background of type IIB superstring theory can be reinterpreted as the highly effective action (HEA) of four-dimensional N =4 superconformal field theory on the Coulomb branch. We argue that the HEA can be derived from the noncommutative (NC) field theory representation of the AdS/CFT correspondence and the Seiberg-Witten (SW) map defining a spacetime field redefinition between ordinary and NC gauge fields. It is based only on the well-known facts that the master fields of large N matrices are higher-dimensional NC U(1) gauge fields and the SW map is a local coordinate transformation eliminating U(1) gauge fields known as the Darboux theorem in symplectic geometry.

High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate

NASA Astrophysics Data System (ADS)

Na, Jong H.; Kitamura, M.; Arakawa, Y.

2007-11-01

We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C60 film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO2). The transistors exhibited high performance with a threshold voltage of 1.13V, an inverse subthreshold swing of 252mV/decade, and a field-effect mobility up to 1cm2/Vs at an operating voltage as low as 5V. The amorphous phase C60 films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Lightning-channel morphology by return-stroke radiation field waveforms

NASA Technical Reports Server (NTRS)

Willett, J. C.; Le Vine, D. M.; Idone, V. P.

1995-01-01

Simultaneous video and wideband electric field recordings of 32 cloud-to-ground lightning flashes in Florida were analyzed to show the formation of new channels to ground can be detected by examination of the return-stroke radiation fields alone. The return-stroke E and dE/dt waveforms were subjectively classified according to their fine structure. Then the video images were examined field by field to identify each waveform with a visible channel to ground. Fifty-five correlated waveforms and channel images were obtained. Of these, all 34 first-stroke waveforms (multiple jagged E peaks, noisy dE/dt), 8 of which were not radiated by the chronologically first stroke in the flash, came from new channels to ground (not previously seen on video). All 18 subsequent-stroke waveforms (smoothly rounded E and quiet dE/dt after initial peak) were radiated by old channels (illuminated by a previous stroke). Two double-ground waveforms (two distinct first-return-stroke pulses separated by tens of microseconds or less) coincided with video fields showing two new channels. One `anomalous-stroke' waveform (beginning like a first stroke and ending like a subsequent) was produced by a new channel segment to ground branching off an old channel. This waveform classification depends on the presence or absence of high-frequency fine structure. Fourier analysis shows that first-stroke waveforms contain about 18 dB more spectral power in the frequency interval from 500 kHz to at least 7 MHz than subsequent-stroke waveforms for at least 13 microseconds after the main peak.

Channel length dependence of field-effect mobility of c-axis-aligned crystalline In-Ga-Zn-O field-effect transistors

NASA Astrophysics Data System (ADS)

Matsuda, Shinpei; Kikuchi, Erumu; Yamane, Yasumasa; Okazaki, Yutaka; Yamazaki, Shunpei

2015-04-01

Field-effect transistors (FETs) with c-axis-aligned crystalline In-Ga-Zn-O (CAAC-IGZO) active layers have extremely low off-state leakage current. Exploiting this feature, we investigated the application of CAAC-IGZO FETs to LSI memories. A high on-state current is required for the high-speed operation of these LSI memories. The field-effect mobility μFE of a CAAC-IGZO FET is relatively low compared with the electron mobility of single-crystal Si (sc-Si). In this study, we measured and calculated the channel length L dependence of μFE for CAAC-IGZO and sc-Si FETs. For CAAC-IGZO FETs, μFE remains almost constant, particularly when L is longer than 0.3 µm, whereas that of sc-Si FETs decreases markedly as L shortens. Thus, the μFE difference between both FET types is reduced by miniaturization. This difference in μFE behavior is attributed to the different susceptibilities of electrons to phonon scattering. On the basis of this result and the extremely low off-state leakage current of CAAC-IGZO FETs, we expect high-speed LSI memories with low power consumption.

Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui

Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence onmore » the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.« less

In-channel electrochemical detection in the middle of microchannel under high electric field.

PubMed

Kang, Chung Mu; Joo, Segyeong; Bae, Je Hyun; Kim, Yang-Rae; Kim, Yongseong; Chung, Taek Dong

2012-01-17

We propose a new method for performing in-channel electrochemical detection under a high electric field using a polyelectrolytic gel salt bridge (PGSB) integrated in the middle of the electrophoretic separation channel. The finely tuned placement of a gold working electrode and the PGSB on an equipotential surface in the microchannel provided highly sensitive electrochemical detection without any deterioration in the separation efficiency or interference of the applied electric field. To assess the working principle, the open circuit potentials between gold working electrodes and the reference electrode at varying distances were measured in the microchannel under electrophoretic fields using an electrically isolated potentiostat. In addition, "in-channel" cyclic voltammetry confirmed the feasibility of electrochemical detection under various strengths of electric fields (∼400 V/cm). Effective separation on a microchip equipped with a PGSB under high electric fields was demonstrated for the electrochemical detection of biological compounds such as dopamine and catechol. The proposed "in-channel" electrochemical detection under a high electric field enables wider electrochemical detection applications in microchip electrophoresis.

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Tanaka, Hiroyuki; Umeyama, Norio; Koga, Kazuhiro; Khumpuang, Sommawan; Nagao, Masayoshi; Matsukawa, Takashi; Hara, Shiro

2018-06-01

P-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) with the 〈110〉 or 〈100〉 channel direction have been successfully fabricated on circular silicon-on-insulator (SOI) diaphragms using a cost-effective minimal-fab process, and their electrical characteristics have been systematically investigated before and after the SOI diaphragm formation. It was found that almost the same subthreshold slope (S-slope) and threshold voltage (V t) are observed in the fabricated PMOSFETs before and after the SOI diaphragm formation, and they are independent of the channel direction. On the other hand, significant variations in drain current were observed in the fabricated PMOSFETs with the 〈110〉 channel direction after the SOI diaphragm formation owing to the residual mechanical stress-induced piezoresistive effect. It was also confirmed that electrical characteristics of the fabricated PMOSFETs with the 〈100〉 channel direction are almost the same before and after the SOI diaphragm formation, i.e., not sensitive to the mechanical stress. Moreover, the drain current variations at different directions of mechanical stress and current flow were systematically investigated and discussed.

Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

NASA Technical Reports Server (NTRS)

Krasowski, Michael J.

2008-01-01

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform

Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N-channel depletion MOSFETs

NASA Astrophysics Data System (ADS)

Gnana Prakash, A. P.; Pradeep, T. M.; Hegde, Vinayakprasanna N.; Pushpa, N.; Bajpai, P. K.; Patel, S. P.; Trivedi, Tarkeshwar; Bhushan, K. G.

2017-12-01

NPN transistors and N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 5 MeV protons and 60Co gamma radiation in the dose ranging from 1 Mrad(Si) to 100 Mrad(Si). The different electrical characteristics of the NPN transistor such as Gummel characteristics, excess base current (ΔIB), dc current gain (hFE), transconductance (gm), displacement damage factor (K) and output characteristics were studied as a function of total dose. The different electrical characteristics of N-channel MOSFETs such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot), transconductance (gm), mobility (µ) and drain saturation current (IDSat) were studied systematically before and after irradiation in the same dose ranges. A considerable increase in the base current (IB) and decrease in the hFE, gm and collector saturation current (ICSat) were observed after irradiation in the case of the NPN transistor. In the N-channel MOSFETs, the ΔNit and ΔNot were found to increase and Vth, gm, µ and IDSat were found to decrease with increase in the radiation dose. The 5 MeV proton irradiation results of both the NPN transistor and N-channel MOSFETs were compared with 60Co gamma-irradiated devices in the same dose ranges. It was observed that the degradation in 5 MeV proton-irradiated devices is more when compared with the 60Co gamma-irradiated devices at higher total doses.

Organic field-effect transistors: a combined study on short-channel effects and the influence of substrate pre-treatment on ambient stability

NASA Astrophysics Data System (ADS)

Klug, A.; Meingast, A.; Wurzinger, G.; Blümel, A.; Schmoltner, K.; Scherf, U.; List, E. J. W.

2011-10-01

For high-performance low-cost applications based on organic field-effect transistors (OFETs) and corresponding sensors essential properties of the applied semiconducting materials include solution-processability, high field-effect mobility, compatibility with adjacent layers and stability with respect to ambient conditions. In this combined study regioregular poly(3-hexylthiophene)- and pentacene-based bottom-gate bottom-contact OFETs with various channel lengths are thoroughly investigated with respect to short-channel effects and the implications of dielectric surface modification with hexamethyldisilazane (HMDS) on device performance. In addition, the influences of oxygen, moisture and HMDStreatment on the ambient stability of the devices are evaluated in detail. While OFETs without surface modification exhibited the expected degradation behavior upon air exposure mainly due to oxygen/moisture-induced doping or charge-carrier trapping, the stability of the investigated semiconductors was found to be distinctly increased when the substrate surface was hydrophobized. The presented results thoroughly summarize important issues which have to be considered when selecting semiconducting materials for high-performance OFETs and OFET-based sensors.

Performance improvement in novel germanium-tin/germanium heterojunction-enhanced p-channel tunneling field-effect transistor

NASA Astrophysics Data System (ADS)

Wang, Hongjuan; Liu, Yan; Liu, Mingshan; Zhang, Qingfang; Zhang, Chunfu; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue; Han, Genquan

2015-07-01

We design a novel GeSn-based heterojunction-enhanced p-channel tunneling field-effect transistor (HE-PTFET) with a Ge0.92Sn0.08/Ge heterojunction located in channel region, at a distance of LT-H from the Ge0.92Sn0.08 source-channel tunneling junction (TJ). HE-PTFETs demonstrate the negative shift of onset voltage VONSET, the steeper subthreshold swing S, and the improved on-state current ION compared to Ge0.92Sn0.08 homo-PTFET. At low VGS, the suppression of BTBT due to the widening of the tunneling barrier caused by the heterojunction leads to a negative shift of VONSET in HE-PTFETs. At high VGS, ION enhancement in HE-PTFETs is achieved over the homo device, which is attributed to the confinement of BTBT in Ge0.92Sn0.08 source-channel TJ region by the heterojunction, where the short tunneling paths lead to a high tunneling probability. Due to the steeper average S, HE-PTFET with a 6 nm LT-H achieves a 4 times higher ION compared to homo device at a VDD of -0.3 V.

Fluorination of Metal Phthalocyanines: Single-Crystal Growth, Efficient N-Channel Organic Field-Effect Transistors, and Structure-Property Relationships

PubMed Central

Jiang, Hui; Ye, Jun; Hu, Peng; Wei, Fengxia; Du, Kezhao; Wang, Ning; Ba, Te; Feng, Shuanglong; Kloc, Christian

2014-01-01

The fluorination of p-type metal phthalocyanines produces n-type semiconductors, allowing the design of organic electronic circuits that contain inexpensive heterojunctions made from chemically and thermally stable p- and n-type organic semiconductors. For the evaluation of close to intrinsic transport properties, high-quality centimeter-sized single crystals of F16CuPc, F16CoPc and F16ZnPc have been grown. New crystal structures of F16CuPc, F16CoPc and F16ZnPc have been determined. Organic single-crystal field-effect transistors have been fabricated to study the effects of the central metal atom on their charge transport properties. The F16ZnPc has the highest electron mobility (~1.1 cm2 V−1 s−1). Theoretical calculations indicate that the crystal structure and electronic structure of the central metal atom determine the transport properties of fluorinated metal phthalocyanines. PMID:25524460

n-Alkanols potentiate sodium channel inactivation in squid giant axons.

PubMed Central

Oxford, G S; Swenson, R P

1979-01-01

The effects of n-octanol and n-decanol on nerve membrane sodium channels were examined in internally perfused, voltage-clamped squid giant axons. Both n-octanol and n-decanol almost completely eliminated the residual sodium conductance at the end of 8-ms voltage steps. In contrast, peak sodium conductance was only partially reduced. This block of peak and residual sodium conductance was very reversible and seen with both internal and external alkanol application. The differential sensitivity of peak and residual conductance to alkanol treatment was eliminated after internal pronase treatment, suggesting that n-octanol and n-decanol enhance the normal inactivation mechanism rather than directly blocking channels in a time-dependent manner. PMID:233577

Hydrodynamic optical-field-ionized plasma channels

NASA Astrophysics Data System (ADS)

Shalloo, R. J.; Arran, C.; Corner, L.; Holloway, J.; Jonnerby, J.; Walczak, R.; Milchberg, H. M.; Hooker, S. M.

2018-05-01

We present experiments and numerical simulations which demonstrate that fully ionized, low-density plasma channels could be formed by hydrodynamic expansion of plasma columns produced by optical field ionization. Simulations of the hydrodynamic expansion of plasma columns formed in hydrogen by an axicon lens show the generation of 200 mm long plasma channels with axial densities of order ne(0 ) =1 ×1017cm-3 and lowest-order modes of spot size WM≈40 μ m . These simulations show that the laser energy required to generate the channels is modest: of order 1 mJ per centimeter of channel. The simulations are confirmed by experiments with a spherical lens which show the formation of short plasma channels with 1.5 ×1017cm-3≲ne(0 ) ≲1 ×1018cm-3 and 61 μ m ≳WM≳33 μ m . Low-density plasma channels of this type would appear to be well suited as multi-GeV laser-plasma accelerator stages capable of long-term operation at high pulse repetition rates.

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

DOEpatents

Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

1987-06-08

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.

Piezoelectric coupling in a field-effect transistor with a nanohybrid channel of ZnO nanorods grown vertically on graphene.

PubMed

Quang Dang, Vinh; Kim, Do-Il; Thai Duy, Le; Kim, Bo-Yeong; Hwang, Byeong-Ung; Jang, Mi; Shin, Kyung-Sik; Kim, Sang-Woo; Lee, Nae-Eung

2014-12-21

Piezoelectric coupling phenomena in a graphene field-effect transistor (GFET) with a nano-hybrid channel of chemical-vapor-deposited Gr (CVD Gr) and vertically aligned ZnO nanorods (NRs) under mechanical pressurization were investigated. Transfer characteristics of the hybrid channel GFET clearly indicated that the piezoelectric effect of ZnO NRs under static or dynamic pressure modulated the channel conductivity (σ) and caused a positive shift of 0.25% per kPa in the Dirac point. However, the GFET without ZnO NRs showed no change in either σ or the Dirac point. Analysis of the Dirac point shifts indicated transfer of electrons from the CVD Gr to ZnO NRs due to modulation of their interfacial barrier height under pressure. High responsiveness of the hybrid channel device with fast response and recovery times was evident in the time-dependent behavior at a small gate bias. In addition, the hybrid channel FET could be gated by mechanical pressurization only. Therefore, a piezoelectric-coupled hybrid channel GFET can be used as a pressure-sensing device with low power consumption and a fast response time. Hybridization of piezoelectric 1D nanomaterials with a 2D semiconducting channel in FETs enables a new design for future nanodevices.

Velocity Vector Field Visualization of Flow in Liquid Acquisition Device Channel

NASA Technical Reports Server (NTRS)

McQuillen, John B.; Chao, David F.; Hall, Nancy R.; Zhang, Nengli

2012-01-01

A capillary flow liquid acquisition device (LAD) for cryogenic propellants has been developed and tested in NASA Glenn Research Center to meet the requirements of transferring cryogenic liquid propellants from storage tanks to an engine in reduced gravity environments. The prototypical mesh screen channel LAD was fabricated with a mesh screen, covering a rectangular flow channel with a cylindrical outlet tube, and was tested with liquid oxygen (LOX). In order to better understand the performance in various gravity environments and orientations at different liquid submersion depths of the screen channel LAD, a series of computational fluid dynamics (CFD) simulations of LOX flow through the LAD screen channel was undertaken. The resulting velocity vector field visualization for the flow in the channel has been used to reveal the gravity effects on the flow in the screen channel.

Study of novel junctionless Ge n-Tunneling Field-Effect Transistors with lightly doped drain (LDD) region

NASA Astrophysics Data System (ADS)

Liu, Xiangyu; Hu, Huiyong; Wang, Bin; Wang, Meng; Han, Genquan; Cui, Shimin; Zhang, Heming

2017-02-01

In this paper, a novel junctionless Ge n-Tunneling Field-Effect Transistors (TFET) structure is proposed. The simulation results show that Ion = 5.5 × 10-5A/μm is achieved. The junctionless device structure enhances Ion effectively and increases the region where significant BTBT occurs, comparing with the normal Ge-nTEFT. The impact of the lightly doped drain (LDD) region is investigated. A comparison of Ion and Ioff of the junctionless Ge n-TFET with different channel doping concentration ND and LDD doping concentration NLDD is studied. Ioff is reduced 1 order of magnitude with the optimized ND and NLDD are 1 × 1018cm-3 and 1 × 1017 cm-3, respectively. To reduce the gate induced drain leakage (GIDL) current, the impact of the sloped gate oxide structure is also studied. By employing the sloped gate oxide structure, the below 60 mV/decade subthreshold swing S = 46.2 mV/decade is achieved at Ion = 4.05 × 10-5A/μm and Ion/Ioff = 5.7 × 106.

Quantum simulation of an ultrathin body field-effect transistor with channel imperfections

NASA Astrophysics Data System (ADS)

Vyurkov, V.; Semenikhin, I.; Filippov, S.; Orlikovsky, A.

2012-04-01

An efficient program for the all-quantum simulation of nanometer field-effect transistors is elaborated. The model is based on the Landauer-Buttiker approach. Our calculation of transmission coefficients employs a transfer-matrix technique involving the arbitrary precision (multiprecision) arithmetic to cope with evanescent modes. Modified in such way, the transfer-matrix technique turns out to be much faster in practical simulations than that of scattering-matrix. Results of the simulation demonstrate the impact of realistic channel imperfections (random charged centers and wall roughness) on transistor characteristics. The Landauer-Buttiker approach is developed to incorporate calculation of the noise at an arbitrary temperature. We also validate the ballistic Landauer-Buttiker approach for the usual situation when heavily doped contacts are indispensably included into the simulation region.

Piezo-Phototronic Effect Controlled Dual-Channel Visible light Communication (PVLC) Using InGaN/GaN Multiquantum Well Nanopillars.

PubMed

Du, Chunhua; Jiang, Chunyan; Zuo, Peng; Huang, Xin; Pu, Xiong; Zhao, Zhenfu; Zhou, Yongli; Li, Linxuan; Chen, Hong; Hu, Weiguo; Wang, Zhong Lin

2015-12-02

Visible light communication (VLC) simultaneously provides illumination and communication via light emitting diodes (LEDs). Keeping a low bit error rate is essential to communication quality, and holding a stable brightness level is pivotal for illumination function. For the first time, a piezo-phototronic effect controlled visible light communication (PVLC) system based on InGaN/GaN multiquantum wells nanopillars is demonstrated, in which the information is coded by mechanical straining. This approach of force coding is also instrumental to avoid LED blinks, which has less impact on illumination and is much safer to eyes than electrical on/off VLC. The two-channel transmission mode of the system here shows great superiority in error self-validation and error self-elimination in comparison to VLC. This two-channel PVLC system provides a suitable way to carry out noncontact, reliable communication under complex circumstances. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage

NASA Astrophysics Data System (ADS)

Yang, Xiaolei; Tao, Yonghong; Yang, Tongtong; Huang, Runhua; Song, Bai

2018-03-01

Owing to the conductivity modulation of silicon carbide (SiC) bipolar devices, n-channel insulated gate bipolar transistors (n-IGBTs) have a significant advantage over metal oxide semiconductor field effect transistors (MOSFETs) in ultra high voltage (UHV) applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4H-SiC n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 kV. The n-IGBTs carried a collector current density of 24 A/cm2 at a power dissipation of 300 W/cm2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm2.

Organic-inorganic proximity effect in the magneto-conductance of vertical organic field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khachatryan, B.; Devir-Wolfman, A. H.; Ehrenfreund, E., E-mail: eitane@technion.ac.il

Vertical organic field effect transistors having a patterned source electrode and an a-SiO{sub 2} insulation layer show high performance as a switching element with high transfer characteristics. By measuring the low field magneto-conductance under ambient conditions at room temperature, we show here that the proximity of the inorganic a-SiO{sub 2} insulation to the organic conducting channel affects considerably the magnetic response. We propose that in n-type devices, electrons in the organic conducting channel and spin bearing charged defects in the inorganic a-SiO{sub 2} insulation layer (e.g., O{sub 2} = Si{sup +·}) form oppositely charged spin pairs whose singlet-triplet spin configurations are mixedmore » through the relatively strong hyperfine field of {sup 29}Si. By increasing the contact area between the insulation layer and the conducting channel, the ∼2% magneto-conductance response may be considerably enhanced.« less

Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires.

PubMed

Liu, Xingqiang; Yang, Xiaonian; Gao, Guoyun; Yang, Zhenyu; Liu, Haitao; Li, Qiang; Lou, Zheng; Shen, Guozhen; Liao, Lei; Pan, Caofeng; Lin Wang, Zhong

2016-08-23

We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W(-1), with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W(-1) and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.

Faster voltage-dependent activation of Na+ channels in growth cones versus somata of neuroblastoma N1E-115 cells.

PubMed Central

Zhang, J; Loew, L M; Davidson, R M

1996-01-01

Kinetics of voltage-gated ionic channels fundamentally reflect the response of the channels to local electric fields. In this report cell-attached patch-clamp studies reveal that the voltage-dependent activation rate of sodium channels residing in the growth cone membrane differs from that of soma sodium channels in differentiating N1E-115 neuroblastoma cells. Because other electrophysiological properties of these channels do not differ, this finding may be a reflection of the difference in intramembrane electric field in these two regions of the cell. This represents a new mechanism for channels to attain a range of activities both within and between cells. PMID:8913589

Faster voltage-dependent activation of Na+ channels in growth cones versus somata of neuroblastoma N1E-115 cells.

PubMed

Zhang, J; Loew, L M; Davidson, R M

1996-11-01

Kinetics of voltage-gated ionic channels fundamentally reflect the response of the channels to local electric fields. In this report cell-attached patch-clamp studies reveal that the voltage-dependent activation rate of sodium channels residing in the growth cone membrane differs from that of soma sodium channels in differentiating N1E-115 neuroblastoma cells. Because other electrophysiological properties of these channels do not differ, this finding may be a reflection of the difference in intramembrane electric field in these two regions of the cell. This represents a new mechanism for channels to attain a range of activities both within and between cells.

Optical Design of the WFIRST Phase-A Integral Field Channel

NASA Technical Reports Server (NTRS)

Gao, Guangjun; Pasquale, Bert A.; Marx, Catherine T.; Chambers, Victor

2017-01-01

WFIRST is one of NASA's Decadal Survey Missions and is currently in Phase-A development. The optical design of the WFIRST Integral Field Channel (IFC), one of three main optical channels of WFIRST, is presented, and the evolution of the IFC channel since Mission Concept Review (MCR, end of Pre-Phase A) is discussed. The IFC has two sub-channels: Supernova (IFC-S) and Galaxy (IFC-G) channels, with Fields of View of 3"x4.5" and 4.2"x9" respectively, and approximately R 75 spectral analysis over waveband 0.42 approximately 2.0 micrometers. The Phase-A IFC optical design meets image quality requirements over the FOV areas while balancing cost and volume constraints.

Constant fields and constant gradients in open ionic channels.

PubMed Central

Chen, D P; Barcilon, V; Eisenberg, R S

1992-01-01

Ions enter cells through pores in proteins that are holes in dielectrics. The energy of interaction between ion and charge induced on the dielectric is many kT, and so the dielectric properties of channel and pore are important. We describe ionic movement by (three-dimensional) Nemst-Planck equations (including flux and net charge). Potential is described by Poisson's equation in the pore and Laplace's equation in the channel wall, allowing induced but not permanent charge. Asymptotic expansions are constructed exploiting the long narrow shape of the pore and the relatively high dielectric constant of the pore's contents. The resulting one-dimensional equations can be integrated numerically; they can be analyzed when channels are short or long (compared with the Debye length). Traditional constant field equations are derived if the induced charge is small, e.g., if the channel is short or if the total concentration gradient is zero. A constant gradient of concentration is derived if the channel is long. Plots directly comparable to experiments are given of current vs voltage, reversal potential vs. concentration, and slope conductance vs. concentration. This dielectric theory can easily be tested: its parameters can be determined by traditional constant field measurements. The dielectric theory then predicts current-voltage relations quite different from constant field, usually more linear, when gradients of total concentration are imposed. Numerical analysis shows that the interaction of ion and channel can be described by a mean potential if, but only if, the induced charge is negligible, that is to say, the electric field is spatially constant. Images FIGURE 1 PMID:1376159

Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

NASA Astrophysics Data System (ADS)

Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

2018-04-01

A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

The role of AlGaN buffers and channel thickness in the electronic transport properties of Al{sub x}In{sub 1–x}N/AlN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amirabbasi, M., E-mail: mo.amirabbasi@gmail.com

We try to theoretically analyze the reported experimental data of the Al{sub x}In{sub 1–x}N/AlN/GaN heterostructures grown by MOCVD and quantitatively investigate the effects of AlGaN buffers and the GaNchannel thickness on the electrical transport properties of these systems. Also, we obtain the most important effective parameters of the temperature-dependent mobility in the range 35–300 K. Our results show that inserting a 1.1 μm thick Al{sub 0.04}Ga{sub 0.96}N buffer enhances electron mobility by decreasing the effect of phonons, the interface roughness, and dislocation and crystal defect scattering mechanisms. Also, as the channel thickness increases from 20 nm to 40 nm, themore » electron mobility increases from 2200 to 2540 cm{sup 2}/(V s) and from 870 to 1000 cm{sup 2}/(V s) at 35 and 300 K respectively, which is attributed to the reduction in the dislocation density and the strain-induced field. Finally, the reported experimental data show that inserting a 450 nm graded AlGaN layer before an Al{sub 0.04}Ga{sub 0.96}N buffer causes a decrease in the electron mobility, which is attributed to the enhancement of the lateral size of roughness, the dislocation density, and the strain-induced field in this sample.« less

Screening effects in flow through rough channels.

PubMed

Andrade, J S; Araújo, A D; Filoche, M; Sapoval, B

2007-05-11

A surprising similarity is found between the distribution of hydrodynamic stress on the wall of an irregular channel and the distribution of flux from a purely Laplacian field on the same geometry. This finding is a direct outcome of numerical simulations of the Navier-Stokes equations for flow at low Reynolds numbers in two-dimensional channels with rough walls presenting either deterministic or random self-similar geometries. For high Reynolds numbers, the distribution of wall stresses on deterministic and random fractal rough channels becomes substantially dependent on the microscopic details of the walls geometry. Finally, the effects on the flow behavior of the channel symmetry and aspect ratio are also investigated.

Whittle's "Channel One": Effects on Impulsive Preadolescents' Desire for Advertised Products.

ERIC Educational Resources Information Center

Tozzo-Lyles, Teresa A.; Walsh-Childers, Kim

A field experiment tested effects of "Channel One" commercials on impulsive preadolescent students' purchasing preferences, such as product liking and likelihood of buying regularly advertised products. A total of 67 sixth-grade middle school students participated in the field experiment. Students who viewed "Channel One' daily were…

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

NASA Astrophysics Data System (ADS)

Tauk, R.; Łusakowski, J.; Knap, W.; Tiberj, A.; Bougrioua, Z.; Azize, M.; Lorenzini, P.; Sakowicz, M.; Karpierz, K.; Fenouillet-Beranger, C.; Cassé, M.; Gallon, C.; Boeuf, F.; Skotnicki, T.

2007-11-01

Room temperature magnetotransport experiments were carried out on field-effect transistors in magnetic fields up to 10 T. It is shown that measurements of the transistor magnetoresistance and its first derivative with respect to the gate voltage allow the derivation of the electron mobility in the gated part of the transistor channel, while the access/contact resistances and the transistor gate length need not be known. We demonstrate the potential of this method using GaN and Si field-effect transistors and discuss its importance for mobility measurements in transistors with nanometer gate length.

Agmatine suppresses peripheral sympathetic tone by inhibiting N-type Ca(2+) channel activity via imidazoline I2 receptor activation.

PubMed

Kim, Young-Hwan; Jeong, Ji-Hyun; Ahn, Duck-Sun; Chung, Seungsoo

2016-08-26

Agmatine, a putative endogenous ligand of imidazoline receptors, suppresses cardiovascular function by inhibiting peripheral sympathetic tone. However, the molecular identity of imidazoline receptor subtypes and its cellular mechanism underlying the agmatine-induced sympathetic suppression remains unknown. Meanwhile, N-type Ca(2+) channels are important for the regulation of NA release in the peripheral sympathetic nervous system. Therefore, it is possible that agmatine suppresses NA release in peripheral sympathetic nerve terminals by inhibiting Ca(2+) influx through N-type Ca(2+) channels. We tested this hypothesis by investigating agmatine effect on electrical field stimulation (EFS)-evoked contraction and NA release in endothelium-denuded rat superior mesenteric arterial strips. We also investigated the effect of agmatine on the N-type Ca(2+) current in superior cervical ganglion (SCG) neurons in rats. Our study demonstrates that agmatine suppresses peripheral sympathetic outflow via the imidazoline I2 receptor in rat mesenteric arteries. In addition, the agmatine-induced suppression of peripheral vascular sympathetic tone is mediated by modulating voltage-dependent N-type Ca(2+) channels in sympathetic nerve terminals. These results suggest a potential cellular mechanism for the agmatine-induced suppression of peripheral sympathetic tone. Furthermore, they provide basic and theoretical information regarding the development of new agents to treat hypertension. Copyright © 2016 Elsevier Inc. All rights reserved.

Effect of an N-terminus deletion on voltage-dependent gating of the ClC-2 chloride channel

PubMed Central

Varela, Diego; Niemeyer, María Isabel; Cid, L Pablo; Sepúlveda, Francisco V

2002-01-01

ClC-2, a chloride channel widely expressed in mammalian tissues, is activated by hyperpolarisation and extracellular acidification. Deletion of amino acids 16–61 in rat ClC-2 abolishes voltage and pH dependence in two-electrode voltage-clamp experiments in amphibian oocytes. These results have been interpreted in terms of a ball-and-chain type of mechanism in which the N-terminus would behave as a ball that is removed from an inactivating site upon hyperpolarisation. We now report whole-cell patch-clamp measurements in mammalian cells showing hyperpolarization-activation of rClC-2Δ16–61 differing only in presenting faster opening and closing kinetics than rClC-2. The lack of time and voltage dependence observed previously was reproduced, however, in nystatin-perforated patch experiments. The behaviour of wild-type rClC-2 did not differ between conventional and nystatin-perforated patches. Similar results were obtained with ClC-2 from guinea-pig. One possible explanation of the results is that some diffusible component is able to lock the channel in an open state but does so only to the mutated channel. Alternative explanations involving the osmotic state of the cell and cytoskeleton structure are also considered. Low extracellular pH activates the wild-type channel but not rClC-2Δ16–61 when expressed in oocytes, a result that had been interpreted to suggest that protons affect the ball-and-chain mechanism. In our experiments no difference was seen in the effect of extracellular pH upon rClC-2 and rClC-2Δ16–61 in either recording configuration, suggesting that protons act independently from possible effects of the N-terminus on gating. Our observations of voltage-dependent gating of the N-terminal deleted ClC-2 are an argument against a ball-and-chain mechanism for this channel. PMID:12381811

Verapamil protective effect on natural and artificial magnetic field cardiovascular impact.

PubMed

Gmitrov, Juraj; Ohkubo, Chiyoji

2002-10-01

Previously we found an opposite effect of artificial static magnetic field (SMF) and natural geomagnetic field (GMF) on arterial baroreceptors. A 0.35 T SMF increased baroreflex sensitivity (BRS), whereas GMF disturbance decreased BRS. Here, we investigated interrelated impacts on arterial baroreceptors of 0.35 T SMF, generated by Nd(2)-Fe(14)-B alloy magnets, GMF, and verapamil, a Ca(2+) channel blocking agent. We measured BRS in rabbits before and after local SMF exposure of sinocarotid baroreceptors or after simultaneous SMF and verapamil application, in conjunction with geomagnetic disturbance during actual experimental run (determined by K-index) and geomagnetic disturbance over the preceding 24 h of each experiment (A(k)-index). BRS was estimated from peak responses of mean arterial pressure (MAP) and heart rate, expressed as percentages of the resting values preceding each pair of pressure (phenylephrine) and depressor drug (nitroprusside) injections. Prior to verapamil and/or SMF application we found a significant positive correlation of K-index with MAP (t = 2.39, P =.021, n = 44), but negative with BRS (t = -4.60, P =.0003, n = 44), and found a negative correlation of A(k)-index with BRS (t = -2.7, P = 0.01, n = 44). SMF induced an increase in BRS (0.79 +/- 0.1 vs. 1.15 +/- 0.1 bpm%/mmHg%, initial value vs. SMF exposure, P <.0002, n = 26). Verapamil infusion blocked the SMF and GMF effect on BRS, indicating Ca(2+) channels as a possible site of both fields' impact. SMF and GMF probably affect baroreceptor sensory transduction, modulating baroreceptor membranes' Ca(2+) channel permeability. Copyright 2002 Wiley-Liss, Inc.

Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy

NASA Astrophysics Data System (ADS)

Nuytten, T.; Bogdanowicz, J.; Witters, L.; Eneman, G.; Hantschel, T.; Schulze, A.; Favia, P.; Bender, H.; De Wolf, I.; Vandervorst, W.

2018-05-01

The continued importance of strain engineering in semiconductor technology demands fast and reliable stress metrology that is non-destructive and process line-compatible. Raman spectroscopy meets these requirements but the diffraction limit prevents its application in current and future technology nodes. We show that nano-focused Raman scattering overcomes these limitations and can be combined with oil-immersion to obtain quantitative anisotropic stress measurements. We demonstrate accurate stress characterization in strained Ge fin field-effect transistor channels without sample preparation or advanced microscopy. The detailed analysis of the enhanced Raman response from a periodic array of 20 nm-wide Ge fins provides direct access to the stress levels inside the nanoscale channel, and the results are validated using nano-beam diffraction measurements.

Electric field effects on current–voltage relationships in microfluidic channels presenting multiple working electrodes in the weak-coupling limit

DOE PAGES

Contento, Nicholas M.; Bohn, Paul W.

2014-05-23

While electrochemical methods are well suited for lab-on-a-chip applications, reliably coupling multiple, electrode-controlled processes in a single microfluidic channel remains a considerable challenge, because the electric fields driving electrokinetic flow make it difficult to establish a precisely known potential at the working electrode(s). The challenge of coupling electrochemical detection with microchip electrophoresis is well known; however, the problem is general, arising in other multielectrode arrangements with applications in enhanced detection and chemical processing. Here, we study the effects of induced electric fields on voltammetric behavior in a microchannel containing multiple in-channel electrodes, using a Fe(CN) 6 3/4- model system. Whenmore » an electric field is induced by applying a cathodic potential at one inchannel electrode, the half-wave potential (E 1/2) for the oxidation of ferrocyanide at an adjacent electrode shifts to more negative potentials. The E 1/2 value depends linearly on the electric field current at a separate in-channel electrode. The observed shift in E 1/2 is quantitatively described by a model, which accounts for the change in solution potential caused by the iR drop along the length of the microchannel. The model, which reliably captures changes in electrode location and solution conductivity, apportions the electric field potential between iR drop and electrochemical potential components, enabling the study of microchannel electric field magnitudes at low applied potentials. In the system studied, the iR component of the electric field potential increases exponentially with applied current before reaching an asymptotic value near 80 % of the total applied potential. The methods described will aid in the development and interpretation of future microchip electrochemistry methods, particularly those that benefit from the coupling of electrokinetic and electrochemical phenomena at low voltages.« less

Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax

PubMed Central

Lyu, Hongming; Lu, Qi; Liu, Jinbiao; Wu, Xiaoming; Zhang, Jinyu; Li, Junfeng; Niu, Jiebin; Yu, Zhiping; Wu, Huaqiang; Qian, He

2016-01-01

In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation velocity. However, its main disadvantage, the lack of bandgap, has not been satisfactorily solved. As a result, maximum oscillation frequency (fmax) which indicates transistors’ power amplification ability has been disappointing. Here, we present submicron field-effect transistors with specially designed low-resistance gate and excellent source/drain contact, and therefore significantly improved fmax. The fabrication was assisted by the advanced 8-inch CMOS back-end-of-line technology. A 200-nm-gate-length GFET achieves fT/fmax = 35.4/50 GHz. All GFET samples with gate lengths ranging from 200 nm to 400 nm possess fmax 31–41% higher than fT, closely resembling Si n-channel MOSFETs at comparable technology nodes. These results re-strengthen the promise of graphene field-effect transistors in next generation semiconductor electronics. PMID:27775009

The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Liu, Yan; Lin, Zhaojun; Zhao, Jingtao; Yang, Ming; Shi, Wenjing; Lv, Yuanjie; Feng, Zhihong

2016-04-01

The electron mobility for the prepared AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied by comparing the measured electron mobility with the theoretical value. The measured electron mobility is derived from the measured capacitance-voltage (C-V) and current-voltage (I-V) characteristics, and the theoretical mobility is determined by using Matthiessen's law, involving six kinds of important scattering mechanisms. For the prepared device at room temperature, longitudinal optical phonon scattering (LO scattering) was found to have a remarkable effect on the value of the electron mobility, and polarization Coulomb field scattering (PCF scattering ) was found to be important to the changing trend of the electron mobility versus the two-dimensional electron gas (2DEG) density.

High-mobility field-effect transistor based on crystalline ZnSnO3 thin films

NASA Astrophysics Data System (ADS)

Minato, Hiroya; Fujiwara, Kohei; Tsukazaki, Atsushi

2018-05-01

We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm2V-1s-1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction.

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; Macleod, Todd C.; Ho, Fat D.

2006-01-01

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.

PubMed

Ma, R M; Peng, R M; Wen, X N; Dai, L; Liu, C; Sun, T; Xu, W J; Qin, G G

2010-10-01

We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

Hopping and trapping mechanisms in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Konezny, S. J.; Bussac, M. N.; Zuppiroli, L.

2010-01-01

A charge carrier in the channel of an organic field-effect transistor (OFET) is coupled to the electric polarization of the gate in the form of a surface Fröhlich polaron [N. Kirova and M. N. Bussac, Phys. Rev. B 68, 235312 (2003)]. We study the effects of the dynamical field of polarization on both small-polaron hopping and trap-limited transport mechanisms. We present numerical calculations of polarization energies, band-narrowing effects due to polarization, hopping barriers, and interface trap depths in pentacene and rubrene transistors as functions of the dielectric constant of the gate insulator and demonstrate that a trap-and-release mechanism more appropriately describes transport in high-mobility OFETs. For mobilities on the order 0.1cm2/Vs and below, all states are highly localized and hopping becomes the predominant mechanism.

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

DOEpatents

Chaffin, deceased, Roger J.; Dawson, Ralph; Fritz, Ian J.; Osbourn, Gordon C.; Zipperian, Thomas E.

1989-01-01

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space which includes a lowest energy .GAMMA.-valley and a next lowest energy L-valley, each k-vector corresponding to one of the orthogonal directions defined by the planes of said layers and the directions perpendicular thereto. The layer thicknesses of the quantum well layers are selected to provide a superlattice L.sub.2D -valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley.

Dean vortices with wall flux in a curved channel membrane system. 2: The velocity field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chung, K.Y.; Brewster, M.E.; Belfort, G.

1996-02-01

The velocity and pressure fields and the effect of wall flux on these fields in a spiral channel are presented. As fluid flows inward through a spiral channel with constant gap and permeable walls, the streamwise flux decreases while the curvature increases. Thus, by balancing the stabilizing effect of wall suction with the destabilizing effect of increasing curvature, established vortices can be maintained along the spiral channel. This approach is used to prescribe spiral geometries with different wall fluxes. Using a weakly nonlinear stability analysis, the influence of wall flux on the characteristics of Dean vortices is obtained. The criticalmore » Dean number is reduced when suction is through the inner wall only, is slightly reduced when suction is equal through both walls, and is increased when suction is through the outer wall only. The magnitude of change is proportional to a ratio of small numbers that measures the importance of the effect of curvature. In membrane filtration applications the wall flux is typically 2 to 5 orders of magnitude less than the streamwise flow. If the radius of curvature of the channel is of the order of 100 times the channel gap, the effect on the critical Dean number is within 2% of the no-wall flux case. If the radius of curvature is sufficiently large, however, it is possible to observe effects on the critical Dean number that approach O(1) in magnitude for certain parameter ranges.« less

Study on effective MOSFET channel length extracted from gate capacitance

NASA Astrophysics Data System (ADS)

Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

2018-01-01

The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

Improved Performance of h-BN Encapsulated Double Gate Graphene Nanomesh Field Effect Transistor for Short Channel Length

NASA Astrophysics Data System (ADS)

Tiwari, Durgesh Laxman; Sivasankaran, K.

This paper presents improved performance of Double Gate Graphene Nanomesh Field Effect Transistor (DG-GNMFET) with h-BN as substrate and gate oxide material. The DC characteristics of 0.95μm and 5nm channel length devices are studied for SiO2 and h-BN substrate and oxide material. For analyzing the ballistic behavior of electron for 5nm channel length, von Neumann boundary condition is considered near source and drain contact region. The simulated results show improved saturation current for h-BN encapsulated structure with two times higher on current value (0.375 for SiO2 and 0.621 for h-BN) as compared to SiO2 encapsulated structure. The obtained result shows h-BN to be a better substrate and oxide material for graphene electronics with improved device characteristics.

Investigation of Corner Effect and Identification of Tunneling Regimes in L-Shaped Tunnel Field-Effect-Transistor.

PubMed

Najam, Faraz; Yu, Yun Seop

2018-09-01

Corner-effect existing in L-shaped tunnel field-effect-transistor (LTFET) was investigated using numerical simulations and band diagram analysis. It was found that the corner-effect is caused by the convergence of electric field in the sharp source corner present in an LTFET, thereby increasing the electric field in the sharp source corner region. It was found that in the corner-effect region tunneling starts early, as a function of applied bias, as compared to the rest of the channel not affected by corner-effect. Further, different tunneling regimes as a function of applied bias were identified in the LTFET including source to channel and channel to channel tunneling regimes. Presence of different tunneling regimes in LTFET was analytically justified with a set of equations developed to model source to channel, and channel to channel tunneling currents. Drain-current-gate-voltage (Ids-Vgs) characteristics obtained from the equations is in reasonable qualitative agreement with numerical simulation.

Resistance and internal electric field in cloud-to-ground lightning channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cen, Jianyong; Yuan, Ping, E-mail: yuanp@nwnu.edu.cn; Xue, Simin

2015-02-02

Cloud-to-ground lightning with six return strokes has been recorded by slitless spectrograph and the system of fast antenna and slow antenna. The physical parameters of the discharge channel have been obtained based on the combination of spectra and synchronous radiated electric field. The resistance and internal electric field of the channel are studied as the focus in this paper. The results show that the resistances per unit length of the lightning channel are in the order of 10{sup −2}–10{sup −1 }Ω/m and the internal electric field strengths are in the order of 10{sup 3 }V/m.

Experimental investigation of the effects of variable expanding channel on the performance of a low-power cusped field thruster

NASA Astrophysics Data System (ADS)

Liu, Hui; Zeng, Ming; Jiang, Wenjia; Yang, Chiyu; Ning, Zhongxi; Yu, Daren

2018-04-01

Due to a special magnetic field structure, the multi-cusped field thruster shows advantages of low wall erosion, low noise and high thrust density over a wide range of thrust. In this paper, expanding discharge channels are employed to make up for deficiencies on the range of thrust and plume divergence, which often emerges in conventional straight cylindrical channels. Three thruster geometries are fabricated with different expanding-angle channels, and a group of experiments are carried out to find out their influence on the performance and discharge characteristics of the thruster. A retarding potential analyzer and a Faraday probe are employed to analyze the structures of the plume in these three models. The results show that when the thrusters operate at low mass flow rate, the gradually-expanding channels exhibit lower propellant utilization and lower overall performance by amounts not exceeding 44.8% in ionization rate and 19.5% in anode efficiency, respectively. But the weakening of magnetic field intensity near the exit of expanding channels leads to an extended thrust throttling ability, a smaller plume divergence angle, and a relatively larger stable operating space without mode converting and the consequent performance degradation.

Flow field induced particle accumulation inside droplets in rectangular channels.

PubMed

Hein, Michael; Moskopp, Michael; Seemann, Ralf

2015-07-07

Particle concentration is a basic operation needed to perform washing steps or to improve subsequent analysis in many (bio)-chemical assays. In this article we present field free, hydrodynamic accumulation of particles and cells in droplets flowing within rectangular micro-channels. Depending on droplet velocity, particles either accumulate at the rear of the droplet or are dispersed over the entire droplet cross-section. We show that the observed particle accumulation behavior can be understood by a coupling of particle sedimentation to the internal flow field of the droplet. The changing accumulation patterns are explained by a qualitative change of the internal flow field. The topological change of the internal flow field, however, is explained by the evolution of the droplet shape with increasing droplet velocity altering the friction with the channel walls. In addition, we demonstrate that accumulated particles can be concentrated, removing excess dispersed phase by splitting the droplet at a simple channel junction.

Multi-channel retarding field analyzer for EAST

NASA Astrophysics Data System (ADS)

M, HENKEL; D, HÖSCHEN; Y, LIANG; Y, LI; S, C. LIU; D, NICOLAI; N, SANDRI; G, SATHEESWARAN; N, YAN; H, X. ZHANG; the EAST, team2

2018-05-01

A multi-channel retarding field analyzer (MC-RFA) including two RFA modules and two Langmuir probes to measure the ion and electron temperature profiles within the scrape-off layer was developed for investigations of the interplay between magnetic topology and plasma transport at the plasma boundary. The MC-RFA probe for the stellarator W7-X and first measurements at the tokamak EAST was designed. The probe head allows simultaneous multi-channel ion temperature as well as for electron temperature measurements. The usability for radial correlation measurements of the measured ion currents is also given.

Dual-channel near-field control by polarizations using isotropic and inhomogeneous metasurface.

PubMed

Wan, Xiang; Cai, Ben Geng; Li, Yun Bo; Cui, Tie Jun

2015-11-03

We propose a method for dual-channel near-field manipulations by designing isotropic but inhomogeneous metasurfaces. As example, we present a dual-channel near-field focusing metasurface device. When the device is driven by surface waves from different channels on the metasurface, the near fields will be focused at the same spatial point with different polarizations. Conversely, if a linearly polarized source is radiated at the spatial focal point, different channels will be evoked on the metasurface controlled by polarization. We fabricated and measured the metasurface device in the microwave frequency. Well agreements between the simulation and measurement results are observed. The proposed method exhibits great flexibility in controlling the surface waves and spatial waves simultaneously. It is expected that the proposed method and dual-channel device will facilitate the manipulation of near electromagnetic or optical waves in different frequency regimes.

Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

NASA Astrophysics Data System (ADS)

Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

2006-10-01

Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat Duen

2005-01-01

Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

Quantum channels and memory effects

NASA Astrophysics Data System (ADS)

Caruso, Filippo; Giovannetti, Vittorio; Lupo, Cosmo; Mancini, Stefano

2014-10-01

Any physical process can be represented as a quantum channel mapping an initial state to a final state. Hence it can be characterized from the point of view of communication theory, i.e., in terms of its ability to transfer information. Quantum information provides a theoretical framework and the proper mathematical tools to accomplish this. In this context the notion of codes and communication capacities have been introduced by generalizing them from the classical Shannon theory of information transmission and error correction. The underlying assumption of this approach is to consider the channel not as acting on a single system, but on sequences of systems, which, when properly initialized allow one to overcome the noisy effects induced by the physical process under consideration. While most of the work produced so far has been focused on the case in which a given channel transformation acts identically and independently on the various elements of the sequence (memoryless configuration in jargon), correlated error models appear to be a more realistic way to approach the problem. A slightly different, yet conceptually related, notion of correlated errors applies to a single quantum system which evolves continuously in time under the influence of an external disturbance which acts on it in a non-Markovian fashion. This leads to the study of memory effects in quantum channels: a fertile ground where interesting novel phenomena emerge at the intersection of quantum information theory and other branches of physics. A survey is taken of the field of quantum channels theory while also embracing these specific and complex settings.

D1 receptors physically interact with N-type calcium channels to regulate channel distribution and dendritic calcium entry.

PubMed

Kisilevsky, Alexandra E; Mulligan, Sean J; Altier, Christophe; Iftinca, Mircea C; Varela, Diego; Tai, Chao; Chen, Lina; Hameed, Shahid; Hamid, Jawed; Macvicar, Brian A; Zamponi, Gerald W

2008-05-22

Dopamine signaling through D1 receptors in the prefrontal cortex (PFC) plays a critical role in the maintenance of higher cognitive functions, such as working memory. At the cellular level, these functions are predicated to involve alterations in neuronal calcium levels. The dendrites of PFC neurons express D1 receptors and N-type calcium channels, yet little information exists regarding their coupling. Here, we show that D1 receptors potently inhibit N-type channels in dendrites of rat PFC neurons. Using coimmunoprecipitation, we demonstrate the existence of a D1 receptor-N-type channel signaling complex in this region, and we provide evidence for a direct receptor-channel interaction. Finally, we demonstrate the importance of this complex to receptor-channel colocalization in heterologous systems and in PFC neurons. Our data indicate that the N-type calcium channel is an important physiological target of D1 receptors and reveal a mechanism for D1 receptor-mediated regulation of cognitive function in the PFC.

Electric field enhancement due to a saw-tooth asperity in a channel and implications on microscale gas breakdown

NASA Astrophysics Data System (ADS)

Venkattraman, Ayyaswamy

2014-10-01

The electric field enhancement due to an isolated saw-tooth asperity in an infinite channel is considered with the goal of providing some inputs to the choice of field enhancement factors used to describe microscale gas breakdown. The Schwarz-Christoffel transformation is used to map the interior of the channel to the upper half of the transformed plane. The expression for the electric field in the transformed plane is then used to determine the electric field distribution in the channel as well as field enhancement near the asperity. The effective field enhancement factor is determined and its dependence on operating and geometrical parameters is studied. While the effective field enhancement factor depends only weakly on the height of the asperity in comparison to the channel, it is influenced significantly by the base angles of the asperity. Due to the strong dependence of field emission current density on electric field, the effective field enhancement factor (βeff) is shown to vary rapidly with the applied electric field irrespective of the geometrical parameters. This variation is included in the analysis of microscale gas breakdown and compared with results obtained using a constant βeff as is done traditionally. Even though results for a varying βeff may be approximately reproduced using an equivalent constant βeff independent of E-field, it might be important for a range of operating conditions. This is confirmed by extracting βeff from experimental data for breakdown in argon microgaps with plane-parallel cathodes and comparing its dependence on the E-field. While the use of two-dimensional asperities is shown to be a minor disadvantage of the proposed approach in its current form, it can potentially help in developing predictive capabilities as opposed to treating βeff as a curve-fitting parameter.

Carrier mobility in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Yong; Benwadih, Mohamed; Gwoziecki, Romain; Coppard, Romain; Minari, Takeo; Liu, Chuan; Tsukagoshi, Kazuhito; Chroboczek, Jan; Balestra, Francis; Ghibaudo, Gerard

2011-11-01

A study of carrier transport in top-gate and bottom-contact TIPS-pentacene organic field-effect transistors (OFETs) based on mobility is presented. Among three mobilities extracted by different methods, the low-field mobility obtained by the Y function exhibits the best reliability and ease for use, whereas the widely applied field-effect mobility is not reliable, particularly in short-channel transistors and at low temperatures. A detailed study of contact transport reveals its strong impact on short-channel transistors, suggesting that a more intrinsic transport analysis is better implemented in relatively longer-channel devices. The observed temperature dependences of mobility are well explained by a transport model with Gaussian-like diffusivity band tails, different from diffusion in localized states band tails. This model explicitly interprets the non-zero constant mobility at low temperatures and clearly demonstrates the effects of disorder and hopping transport on temperature and carrier density dependences of mobility in organic transistors.

Permeability changes of connexin32 hemi channels reconstituted in liposomes induced by extremely low frequency, low amplitude magnetic fields.

PubMed

Ramundo-Orlando, Alfonsina; Serafino, Annalucia; Schiavo, Rosangela; Liberti, Micaela; d'Inzeo, Guglielmo

2005-02-01

The effect of extremely low frequency and low amplitude magnetic fields on gap junctional permeability was investigated by using reconstituted connexin32 hemi channel in liposomes. Cytochrome c was loaded inside these proteoliposomes and its reduction upon addition of ascorbate in the bulk aqueous phase was adopted as the index of hemi channel permeability. The permeability rate of the hemi channels, expressed as DeltaA/min, was dependent on the incubation temperature of proteoliposomes. The effect of exposures to magnetic fields at different frequencies (7, 13 and 18 Hz) and amplitudes (50, 50 and 70 microT, respectively), and at different temperatures (16, 18 and 24 degrees C) was studied. Only the exposure of proteoliposomes to 18-Hz (B(acpeak) and B(dc)=70 microT) magnetic field for 60 min at 16+/-0.4 degrees C resulted in a significant enhancement of the hemi channel permeability from DeltaA/min=0.0007+/-0.0002 to DeltaA/min=0.0010+/-0.0001 (P=0.030). This enhancement was not found for magnetic field exposures of liposomes kept at the higher temperatures tested. Temperature appears to influence lipid bilayer arrangement in such a way as being capable to mask possible effects induced by the magnetic field. Although the observed effect was very low, it seems to confirm the applicability of our model previously proposed for the interaction of low frequency electromagnetic fields with lipid membrane.

The Effect of Aptamer Concetration towards Reduced Graphene Oxide-Field Effect Transistor Surface Channel for Biosensor Application

NASA Astrophysics Data System (ADS)

Syafiq Zainol Abidin, Azrul; Rahim, Ruslinda Abdul; Huan, Chow Yong; Maidin, Nur Nasyifa Mohd; Atiqah Ahmad, Nurul; Hashwan, Saeed S. Ba; Faudzi, Fatin Nabilah Mohd; Hong, Voon Chun

2018-03-01

Aptamer are artificially produce bioreceptor that has been developed to bind with various target biomolecules such as ion, cells, protein and small molecules. In this research, an aptamer concentration of 0.5 nM, 1 nM, 5 nM, 10 nM, and 50 nM were immobilized on reduced graphene oxide (rGO) integrated with field effect transistor (FET) respectively to study the effect of aptamer concentration toward rGO surface for stable biosensing platform. The 0.5 nM concentration of aptamer shows the highest current result of 84.3 µA at 1 V applied through the source and drain. After immobilized with aminated aptamer, the conductivity shows significant reduction due to the formation of amide bond on rGO surface between aminated aptamer and carboxyl group on rGO. The electrical performance of FET integrated with rGO shows stable electrical performance suitable to be used in the biosensing application.

Measurement and Analysis of a Ferroelectric Field-Effect Transistor NAND Gate

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeond, Todd C.; Sayyah, Rana; Ho, Fat Duen

2009-01-01

Previous research investigated expanding the use of Ferroelectric Field-Effect Transistors (FFET) to other electronic devices beyond memory circuits. Ferroelectric based transistors possess unique characteris tics that give them interesting and useful properties in digital logic circuits. The NAND gate was chosen for investigation as it is one of the fundamental building blocks of digital electronic circuits. In t his paper, NAND gate circuits were constructed utilizing individual F FETs. N-channel FFETs with positive polarization were used for the standard CMOS NAND gate n-channel transistors and n-channel FFETs with n egative polarization were used for the standard CMOS NAND gate p-chan nel transistors. The voltage transfer curves were obtained for the NA ND gate. Comparisons were made between the actual device data and the previous modeled data. These results are compared to standard MOS logic circuits. The circuits analyzed are not intended to be fully opera tional circuits that would interface with existing logic circuits, bu t as a research tool to look into the possibility of using ferroelectric transistors in future logic circuits. Possible applications for th ese devices are presented, and their potential benefits and drawbacks are discussed.

Effects of surface passivation dielectrics on carrier transport in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Oh, Sejoon; Jang, Han-Soo; Choi, Chel-Jong; Cho, Jaehee

2018-04-01

Dielectric layers prepared by different deposition methods were used for the surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the corresponding electrical characteristics were examined. Increases in the sheet charge density and the maximum drain current by approximately 45% and 28%, respectively, were observed after the deposition of a 100 nm-thick SiO2 layer by plasma-enhanced chemical vapor deposition (PECVD) on the top of the AlGaN/GaN HFETs. However, SiO2 deposited by a radio frequency (rf) sputter system had the opposite effect. As the strain applied to AlGaN was influenced by the deposition methods used for the dielectric layers, the carrier transport in the two-dimensional electron gas formed at the interface between AlGaN and GaN was affected accordingly.

Effect of radial magnetic field on peristaltic transport of Jeffrey fluid in curved channel with heat / mass transfer

NASA Astrophysics Data System (ADS)

Abdulhadi, Ahmed M.; Ahmed, Tamara S.

2018-05-01

In this paper, we deals with the impact of radialiy magnetic field on the peristaltic transport of Jeffrey fluid through a curved channel with two dimensional. The effect of slip condition on velocity, the non-slip condition on temperature and conversation is performed. The heat and mass transfer are considered under the influence of various parameters. The flow is investigated under the assumption of long wave length and low Reynolds number approximations. The distribution of temperature and concentration are discussed for various parameters governing the flow with the simultaneous effects of Brinkman number, Soret number and Schmidt number.

Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers.

PubMed

Lee, Sangik; Yoon, Chansoo; Lee, Ji Hye; Kim, Yeon Soo; Lee, Mi Jung; Kim, Wondong; Baik, Jaeyoon; Jia, Quanxi; Park, Bae Ho

2018-06-06

Two-dimensional (2D)-layered semiconducting materials with considerable band gaps are emerging as a new class of materials applicable to next-generation devices. Particularly, black phosphorus (BP) is considered to be very promising for next-generation 2D electrical and optical devices because of its high carrier mobility of 200-1000 cm 2 V -1 s -1 and large on/off ratio of 10 4 to 10 5 in field-effect transistors (FETs). However, its environmental instability in air requires fabrication processes in a glovebox filled with nitrogen or argon gas followed by encapsulation, passivation, and chemical functionalization of BP. Here, we report a new method for reduction of BP-channel devices fabricated without the use of a glovebox by galvanic corrosion of an Al overlayer. The reduction of BP induced by an anodic oxidation of Al overlayer is demonstrated through surface characterization of BP using atomic force microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy along with electrical measurement of a BP-channel FET. After the deposition of an Al overlayer, the FET device shows a significantly enhanced performance, including restoration of ambipolar transport, high carrier mobility of 220 cm 2 V -1 s -1 , low subthreshold swing of 0.73 V/decade, and low interface trap density of 7.8 × 10 11 cm -2 eV -1 . These improvements are attributed to both the reduction of the BP channel and the formation of an Al 2 O 3 interfacial layer resulting in a high- k screening effect. Moreover, ambipolar behavior of our BP-channel FET device combined with charge-trap behavior can be utilized for implementing reconfigurable memory and neuromorphic computing applications. Our study offers a simple device fabrication process for BP-channel FETs with high performance using galvanic oxidation of Al overlayers.

Differential facilitation of N- and P/Q-type calcium channels during trains of action potential-like waveforms

PubMed Central

Currie, Kevin P M; Fox, Aaron P

2002-01-01

Inhibition of presynaptic voltage-gated calcium channels by direct G-protein βγ subunit binding is a widespread mechanism that regulates neurotransmitter release. Voltage-dependent relief of this inhibition (facilitation), most likely to be due to dissociation of the G-protein from the channel, may occur during bursts of action potentials. In this paper we compare the facilitation of N- and P/Q-type Ca2+ channels during short trains of action potential-like waveforms (APWs) using both native channels in adrenal chromaffin cells and heterologously expressed channels in tsA201 cells. While both N- and P/Q-type Ca2+ channels exhibit facilitation that is dependent on the frequency of the APW train, there are important quantitative differences. Approximately 20 % of the voltage-dependent inhibition of N-type ICa was reversed during a train while greater than 40 % of the inhibition of P/Q-type ICa was relieved. Changing the duration or amplitude of the APW dramatically affected the facilitation of N-type channels but had little effect on the facilitation of P/Q-type channels. Since the ratio of N-type to P/Q-type Ca2+ channels varies widely between synapses, differential facilitation may contribute to the fine tuning of synaptic transmission, thereby increasing the computational repertoire of neurons. PMID:11882675

Tunability of p- and n-channel TiOx thin film transistors.

PubMed

Peng, Wu-Chang; Chen, Yao-Ching; He, Ju-Liang; Ou, Sin-Liang; Horng, Ray-Hua; Wuu, Dong-Sing

2018-06-18

To acquire device-quality TiO x films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiO x even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron sputtering (HIPIMS), a highly stable p-type TiO x film with good quality can be achieved. In this research, by varying the oxygen flow rate, p-type γ-TiO and n-type TiO 2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing γ-TiO and TiO 2 as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm 2 /Vs, while their on/off current ratios are 1.7 × 10 4 and 2.5 × 10 5 , respectively. The first presented p-type γ-TiO TFT is a major breakthrough for fabricating the TiO x -based p-n combinational devices. Additionally, our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.

Effective convergence of the two-particle irreducible 1/N expansion for nonequilibrium quantum fields

NASA Astrophysics Data System (ADS)

Aarts, Gert; Laurie, Nathan; Tranberg, Anders

2008-12-01

The 1/N expansion of the two-particle irreducible effective action offers a powerful approach to study quantum field dynamics far from equilibrium. We investigate the effective convergence of the 1/N expansion in the O(N) model by comparing results obtained numerically in 1+1 dimensions at leading, next-to-leading and next-to-next-to-leading order in 1/N as well as in the weak coupling limit. A comparison in classical statistical field theory, where exact numerical results are available, is made as well. We focus on early-time dynamics and quasiparticle properties far from equilibrium and observe rapid effective convergence already for moderate values of 1/N or the coupling.

Pressure-induced depression of synaptic transmission in the cerebellar parallel fibre synapse involves suppression of presynaptic N-type Ca2+ channels.

PubMed

Etzion, Y; Grossman, Y

2000-11-01

High pressure induces CNS hyperexcitability while markedly depressing synaptic transmitter release. We studied the effect of pressure (up to 10.1 MPa) on the parallel fibre (PF) synaptic response in biplanar cerebellar slices of adult guinea pigs. Pressure mildly reduced the PF volley amplitude and to a greater extent depressed the excitatory field postsynaptic potential (fPSP). The depression of the PF volley was noted even at supramaximal stimulus intensities, indicating an effect of pressure on the amplitude of the action potential in each axon. Low concentrations of TTX mimicked the effects of pressure on the PF volley without affecting the fPSP. Application omega-conotoxin GVIA (omega-CgTx) reduced the synaptic efficacy by 34.3+/-2.7%. However, in the presence of omega-CgTx the synaptic depression at pressure was significantly reduced. Reduced Ca2+ entry by application of Cd2+ or low [Ca2+]o did not have a similar influence on the effects of pressure. Application of omega-AGA IVA, omega-AGA TK and Funnel-web spider toxin did not affect the synaptic response in concentrations that usually block P-type Ca2+ channels, whilst the N/P/Q-type blocker omega-conotoxin MVIIC reduced the response to 52.7+/-5.0% indicating the involvement of Q-type channels and R-type channels in the non-N-type fraction of Ca2+ entry. The results demonstrate that N-type Ca2+ channels play a crucial role in the induction of PF synaptic depression at pressure. This finding suggests a coherent mechanism for the induction of CNS hyperexcitability at pressure.

Complementary spin transistor using a quantum well channel.

PubMed

Park, Youn Ho; Choi, Jun Woo; Kim, Hyung-Jun; Chang, Joonyeon; Han, Suk Hee; Choi, Heon-Jin; Koo, Hyun Cheol

2017-04-20

In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.

Conserved Kv4 N-terminal domain critical for effects of Kv channel-interacting protein 2.2 on channel expression and gating.

PubMed

Bähring, R; Dannenberg, J; Peters, H C; Leicher, T; Pongs, O; Isbrandt, D

2001-06-29

Association of Kv channel-interacting proteins (KChIPs) with Kv4 channels leads to modulation of these A-type potassium channels (An, W. F., Bowlby, M. R., Betty, M., Cao, J., Ling, H. P., Mendoza, G., Hinson, J. W., Mattsson, K. I., Strassle, B. W., Trimmer, J. S., and Rhodes, K. J. (2000) Nature 403, 553-556). We cloned a KChIP2 splice variant (KChIP2.2) from human ventricle. In comparison with KChIP2.1, coexpression of KChIP2.2 with human Kv4 channels in mammalian cells slowed the onset of Kv4 current inactivation (2-3-fold), accelerated the recovery from inactivation (5-7-fold), and shifted Kv4 steady-state inactivation curves by 8-29 mV to more positive potentials. The features of Kv4.2/KChIP2.2 currents closely resemble those of cardiac rapidly inactivating transient outward currents. KChIP2.2 stimulated the Kv4 current density in Chinese hamster ovary cells by approximately 55-fold. This correlated with a redistribution of immunoreactivity from perinuclear areas to the plasma membrane. Increased Kv4 cell-surface expression and current density were also obtained in the absence of KChIP2.2 when the highly conserved proximal Kv4 N terminus was deleted. The same domain is required for association of KChIP2.2 with Kv4 alpha-subunits. We propose that an efficient transport of Kv4 channels to the cell surface depends on KChIP binding to the Kv4 N-terminal domain. Our data suggest that the binding is necessary, but not sufficient, for the functional activity of KChIPs.

Effects of inlet flow field conditions on the performance of centrifugal compressor diffusers: Part 2 -- Straight-channel diffuser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deniz, S.; Greitzer, E.M.; Cumpsty, N.A.

2000-01-01

This is Part 2 of an examination of the influence of inlet flow conditions on the performance and operating range of centrifugal compressor vaned diffusers. The paper describes tests of a straight-channel type diffuser, sometimes called a wedge-vane diffuser, and compares the results with those from the discrete-passage diffusers described in Part 1. Effects of diffuser inlet Mach number, flow angle, blockage, and axial flow nonuniformity on diffuser pressure recovery and operating range are addressed. The straight-channel diffuser investigated has 30 vanes and was designed for the same aerodynamic duty as the discrete-passage diffuser described in Part 1. The rangesmore » of the overall pressure recovery coefficients were 0.50--0.78 for the straight-channel diffuser and 0.50--0.70 for the discrete-passage diffuser, except when the diffuser was choked. In other words, the maximum pressure recovery of the straight-channel diffuser was found to be roughly 10% higher than that of the discrete-passage diffuser investigated. The two types of diffuser showed similar behavior regarding the dependence of pressure recovery on diffuser inlet flow angle and the insensitivity of the performance to inlet flow field axial distortion and Mach number. The operating range of the straight-channel diffuser, as for the discrete-passage diffusers, was limited by the onset of rotating stall at a fixed momentum-averaged flow angle into the diffuser, which was for the straight-channel diffuser, {alpha}{sub crit} = 70 {+-} 0.5 deg. The background, nomenclature, and description of the facility and method are all given in Part 1.« less

New design of a cathode flow-field with a sub-channel to improve the polymer electrolyte membrane fuel cell performance

NASA Astrophysics Data System (ADS)

Wang, Yulin; Yue, Like; Wang, Shixue

2017-03-01

The cathode flow-field design of polymer electrolyte membrane (PEM) fuel cells determines the distribution of reactant gases and the removal of liquid water. A suitable design can result in perfect water management and thus high cell performance. In this paper, a new design for a cathode flow-field with a sub-channel was proposed and had been experimentally analyzed in a parallel flow-field PEM fuel cell. Three sub-channel inlets were placed along the cathode channel. The main-channel inlet was fed with moist air to humidify the membrane and maintain high proton conductivity, whereas, the sub-channel inlet was fed with dry air to enhance water removal in the flow channel. The experimental results indicated that the sub-channel design can decrease the pressure drop in the flow channel, and the sub-channels inlet positions (SIP, where the sub-channel inlets were placed along the cathode channel) and flow rates (SFR, percentage of air from the sub-channel inlet in the total cathode flow rate) had a considerable impact on water removal and cell performance. A proposed design that combines the SIP and SFR can effectively eliminate water from the fuel cell, increasing the maximum power density by more than 13.2% compared to the conventional design.

Models of second-order effects in metal-oxide-semiconductor field-effect transistors for computer applications

NASA Technical Reports Server (NTRS)

Benumof, Reuben; Zoutendyk, John; Coss, James

1988-01-01

Second-order effects in metal-oxide-semiconductor field-effect transistors (MOSFETs) are important for devices with dimensions of 2 microns or less. The short and narrow channel effects and drain-induced barrier lowering primarily affect threshold voltage, but formulas for drain current must also take these effects into account. In addition, the drain current is sensitive to channel length modulation due to pinch-off or velocity saturation and is diminished by electron mobility degradation due to normal and lateral electric fields in the channel. A model of a MOSFET including these considerations and emphasizing charge conservation is discussed.

Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits.

PubMed

Larentis, Stefano; Fallahazad, Babak; Movva, Hema C P; Kim, Kyounghwan; Rai, Amritesh; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; Tutuc, Emanuel

2017-05-23

Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary field-effect transistors and circuits. We demonstrate an air-stable, reconfigurable, complementary monolayer MoTe 2 field-effect transistor encapsulated in hexagonal boron nitride, using electrostatically doped contacts. The introduction of a multigate design with prepatterned bottom contacts allows us to independently achieve low contact resistance and threshold voltage tuning, while also decoupling the Schottky contacts and channel gating. We illustrate a complementary inverter and a p-i-n diode as potential applications.

Action of insecticidal N-alkylamides at site 2 of the voltage-sensitive sodium channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ottea, J.A.; Payne, G.T.; Soderlund, D.M.

1990-08-01

Nine synthetic N-alkylamides were examined as inhibitors of the specific binding of ({sup 3}H)batrachotoxinin A 20{alpha}-benzoate (({sup 3}H)BTX-B) to sodium channels and as activators of sodium uptake in mouse brain synaptoneurosomes. In the presence of scorpion (Leiurus quinquestriatus) venom, the six insecticidal analogues were active as both inhibitors of ({sup 3}H)BTX-B binding and stimulators of sodium uptake. These findings are consistent with an action of these compounds at the alkaloid activator recognition site (site 2) of the voltage-sensitive sodium channel. The three noninsecticidal N-alkylamides also inhibited ({sup 3}H)BTX-B binding but were ineffective as activators of sodium uptake. Concentration-response studies revealedmore » that some of the insecticidal amides also enhanced sodium uptake through a second, high-affinity interaction that does not involve site 2, but this secondary effect does not appear to be correlated with insecticidal activity. The activities of N-alkylamides as sodium channel activators were influenced by the length of the alkenyl chain and the location of unsaturation within the molecule. These results further define the actions of N-alkylamides on sodium channels and illustrate the significance of the multiple binding domains of the sodium channel as target sites for insect control agents.« less

Can rice field channels contribute to biodiversity conservation in Southern Brazilian wetlands?

PubMed

Maltchik, Leonardo; Rolon, Ana Silvia; Stenert, Cristina; Machado, Iberê Farina; Rocha, Odete

2011-12-01

Conservation of species in agroecosystems has attracted attention. Irrigation channels can improve habitats and offer conditions for freshwater species conservation. Two questions from biodiversity conservation point of view are: 1) Can the irrigated channels maintain a rich diversity of macrophytes, macroinvertebrates and amphibians over the cultivation cycle? 2) Do richness, abundance and composition of aquatic species change over the rice cultivation cycle? For this, a set of four rice field channels was randomly selected in Southern Brazilian wetlands. In each channel, six sample collection events were carried out over the rice cultivation cycle (June 2005 to June 2006). A total of 160 taxa were identified in irrigated channels, including 59 macrophyte species, 91 taxa of macroinvertebrate and 10 amphibian species. The richness and abundance of macrophytes, macroinvertebrates and amphibians did not change significantly over the rice cultivation cycle. However, the species composition of these groups in the irrigation channels varied between uncultivated and cultivated periods. Our results showed that the species diversity found in the irrigation channels, together with the permanence of water enables these man-made aquatic networks to function as important systems that can contribute to the conservation of biodiversity in regions where the wetlands were converted into rice fields. The conservation of the species in agriculture, such as rice field channels, may be an important alternative for biodiversity conservation in Southern Brazil, where more than 90% of wetland systems have already been lost and the remaining ones are still at high risk due to the expansion of rice production.

Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Fossum, Eric R.; Baier, Steven M.

1992-01-01

Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K are presented. It is shown that the CHFET exhibits normal transistor operation down to 6 K. Some of the details of the transistor operation, such as the gate-voltage dependence of the channel potential, are analyzed. The gate current is examined and is shown to be due to several mechanisms acting in parallel. These include field-emission and thermionic-field-emission, conduction through a temperature-activated resistance, and thermionic emission. The input referred noise for n-channel CHFETs is presented and discussed. The noise has the spectral dependence of 1/f noise, but does not exhibit the usual area dependence.

N channel JFET based digital logic gate structure

NASA Technical Reports Server (NTRS)

Krasowski, Michael J. (Inventor)

2010-01-01

A circuit topography is presented which is used to create usable digital logic gates using N (negatively doped) channel Junction Field Effect Transistors (JFETs) and load resistors, level shifting resistors, and supply rails whose values are based on the direct current (DC) parametric distributions of those JFETs. This method has direct application to the current state of the art in high temperature, for example 300.degree. C. to 500.degree. C. and higher, silicon carbide (SiC) device production. The ability to produce inverting and combinatorial logic enables the production of pulse and edge triggered latches. This scale of logic synthesis would bring digital logic and state machine capabilities to devices operating in extremely hot environments, such as the surface of Venus, near hydrothermal vents, within nuclear reactors (SiC is inherently radiation hardened), and within internal combustion engines. The basic logic gate can be configured as a driver for oscillator circuits allowing for time bases and simple digitizers for resistive or reactive sensors. The basic structure of this innovation, the inverter, can be reconfigured into various analog circuit topographies through the use of feedback structures.

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

PubMed

Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

2018-09-01

In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

Enhance performance of micro direct methanol fuel cell by in situ CO2 removal using novel anode flow field with superhydrophobic degassing channels

NASA Astrophysics Data System (ADS)

Liang, Junsheng; Luo, Ying; Zheng, Sheng; Wang, Dazhi

2017-05-01

Capillary blocking caused by CO2 bubbles in anode flow field (AFF) is one of the bottlenecks for performance improvement of a micro direct methanol fuel cell (μDMFC). In this work, we present a novel AFF structure with nested layout of hydrophilic fuel channels and superhydrophobic degassing channels which can remove most of CO2 from AFF before it is released to the fuel channels. The new AFFs are fabricated on Ti substrates by using micro photochemical etching combined with anodization and fluorination treatments. Performance of the μDMFCs with and without superhydrophobic degassing channels in their AFF is comparatively studied. Results show that the superhydrophobic degassing channels can significantly speed up the exhaust of CO2 from the AFF. CO2 clogging is not observed in the new AFFs even when their comparison AFFs have been seriously blocked by CO2 slugs under the same operating conditions. 55% and 60% of total CO2 produced in μDMFCs with N-serpentine and N-spiral AFF can be respectively removed by the superhydrophobic degassing channels. The power densities of the μDMFCs equipped with new serpentine and spiral AFFs are respectively improved by 30% and 90% compared with those using conventional AFFs. This means that the new AFFs developed in this work can effectively prevent CO2-induced capillary blocking in the fuel channels, and finally significantly improve the performance of the μDMFCs.

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

NASA Astrophysics Data System (ADS)

Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

2016-08-01

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

Cilnidipine, an L/N-type calcium channel blocker prevents acquisition and expression of ethanol-induced locomotor sensitization in mice.

PubMed

Bhutada, Pravinkumar; Mundhada, Yogita; Patil, Jayshree; Rahigude, Anand; Zambare, Krushna; Deshmukh, Prashant; Tanwar, Dhanshree; Jain, Kishor

2012-04-11

Several evidences indicated the involvement of L- and N-type calcium channels in behavioral effects of drugs of abuse, including ethanol. Calcium channels are implicated in ethanol-induced behaviors and neurochemical responses. Calcium channel antagonists block the psychostimulants induced behavioral sensitization. Recently, it is demonstrated that L-, N- and T-type calcium channel blockers attenuate the acute locomotor stimulant effects of ethanol. However, no evidence indicated the role of calcium channels in ethanol-induced psychomotor sensitization. Therefore, present study evaluated the influence of cilnidipine, an L/N-type calcium channel blocker on acquisition and expression of ethanol-induced locomotor sensitization. The results revealed that cilnidipine (0.1 and 1.0μg/mouse, i.c.v.) attenuates the expression of sensitization to locomotor stimulant effect of ethanol (2.0g/kg, i.p.), whereas pre- treatment of cilnidipine (0.1 and 1.0μg/mouse, i.c.v.) during development of sensitization blocks acquisition and attenuates expression of sensitization to locomotor stimulant effect of ethanol. Cilnidipine per se did not influence locomotor activity in tested doses. Further, cilnidipine had no influence on effect of ethanol on rotarod performance. These results support the hypothesis that neuroadaptive changes in calcium channels participate in the acquisition and the expression of ethanol-induced locomotor sensitization. Copyright © 2012 Elsevier Ireland Ltd. All rights reserved.

Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors

NASA Astrophysics Data System (ADS)

Byeon, Hye-Hyeon; Lee, Woo Chul; Kim, Wonbin; Kim, Seong Keun; Kim, Woong; Yi, Hyunjung

2017-01-01

Single-walled carbon nanotubes (SWNTs) are one of the promising electronic components for nanoscale electronic devices such as field-effect transistors (FETs) owing to their excellent device characteristics such as high conductivity, high carrier mobility and mechanical flexibility. Localized gating gemometry of FETs enables individual addressing of active channels and allows for better electrostatics via thinner dielectric layer of high k-value. For localized gating of SWNTs, it becomes critical to define SWNTs of controlled nanostructures and functionality onto desired locations in high precision. Here, we demonstrate that a biologically templated approach in combination of microfabrication processes can successfully produce a nanostructured channels of SWNTs for localized active devices such as local bottom-gated FETs. A large-scale nanostructured network, nanomesh, of SWNTs were assembled in solution using an M13 phage with strong binding affinity toward SWNTs and micrometer-scale nanomesh channels were defined using negative photolithography and plasma-etching processes. The bio-fabrication approach produced local bottom-gated FETs with remarkably controllable nanostructures and successfully enabled semiconducting behavior out of unsorted SWNTs. In addition, the localized gating scheme enhanced the device performances such as operation voltage and I on/I off ratio. We believe that our approach provides a useful and integrative method for fabricating electronic devices out of nanoscale electronic materials for applications in which tunable electrical properties, mechanical flexibility, ambient stability, and chemical stability are of crucial importance.

External electric field effects on Schottky barrier at Gd3N@C80/Au interface

NASA Astrophysics Data System (ADS)

Onishi, Koichi; Nakashima, Fumihiro; Jin, Ge; Eto, Daichi; Hattori, Hayami; Miyoshi, Noriko; Kirimoto, Kenta; Sun, Yong

2017-08-01

The effects of the external electric field on the height of the Schottky barrier at the Gd3N@C80/Au interface were studied by measuring current-voltage characteristics at various temperatures from 200 K to 450 K. The Gd3N@C80 sample with the conduction/forbidden/valence energy band structure had a face-centered cubic crystal structure with the average grain size of several nanometers. The height of the Gd3N@C80/Au Schottky barrier was confirmed to be 400 meV at a low electric field at room temperature. Moreover, the height decreases with the increasing external electric field through a change of permittivity in the Gd3N@C80 sample due to a polarization of the [Gd3] 9 +-[N3 -+("separators="|C80 ) 6 -] dipoles in the Gd3N@C80 molecule. The field-dependence of the barrier height can be described using a power math function of the electric field strength. The results of the field-dependent barrier height indicate that the reduction in the Schottky barrier is due to an image force effect of the transport charge carrier at the Gd3N@C80/Au interface.

Inhibition of N-Type Calcium Channels by Fluorophenoxyanilide Derivatives

PubMed Central

Gleeson, Ellen C.; Graham, Janease E.; Spiller, Sandro; Vetter, Irina; Lewis, Richard J.; Duggan, Peter J.; Tuck, Kellie L.

2015-01-01

A set of fluorophenoxyanilides, designed to be simplified analogues of previously reported ω-conotoxin GVIA mimetics, were prepared and tested for N-type calcium channel inhibition in a SH-SY5Y neuroblastoma FLIPR assay. N-type or Cav2.2 channel is a validated target for the treatment of refractory chronic pain. Despite being significantly less complex than the originally designed mimetics, up to a seven-fold improvement in activity was observed. PMID:25871286

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain currentmore » after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.« less

Charge radius of the 13N* proton halo nucleus with Halo Effective Field Theory

NASA Astrophysics Data System (ADS)

Mosavi Khansari, M.; Khalili, H.; Sadeghi, H.

2018-02-01

We evaluated the charge radius of the first excited state of 13N with halo Effective Field Theory (hEFT) at the low energies. The halo effective field theory without pion is used to examine the halo nucleus bound state with a large S-wave scattering length. We built Lagrangian from the effective core and the valence proton of the fields and obtained the charge form factor at Leading-Order (LO). The charge radius at leading order for the first excited state of the proton halo nucleus, 13N, has been estimated as rc = 2.52 fm. This result is without any finite-size contributions included from the core and the proton. If we consider the contributions of the charge radius of the proton and the core, the result will be [rC]13N* = 5.85 fm.

Coulomb blockade based field-effect transistors exploiting stripe-shaped channel geometries of self-assembled metal nanoparticles.

PubMed

Lehmann, Hauke; Willing, Svenja; Möller, Sandra; Volkmann, Mirjam; Klinke, Christian

2016-08-14

Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging energy. Thus, a Coulomb-energy gap emerges during transport experiments that can be shifted by electric fields, allowing for charge transport whenever energy levels of neighboring particles match. Hence, the state of the device changes sequentially between conducting and non-conducting instead of just one transition from conducting to pinch-off as in semiconductors. To exploit this behavior for field-effect transistors, it is necessary to use uniform nanoparticles in ordered arrays separated by well-defined tunnel barriers. In this work, CoPt nanoparticles with a narrow size distribution are synthesized by colloidal chemistry. These particles are deposited via the scalable Langmuir-Blodgett technique as ordered, homogeneous monolayers onto Si/SiO2 substrates with pre-patterned gold electrodes. The resulting nanoparticle arrays are limited to stripes of adjustable lengths and widths. In such a defined channel with a limited number of conduction paths the current can be controlled precisely by a gate voltage. Clearly pronounced Coulomb oscillations are observed up to temperatures of 150 K. Using such systems as field-effect transistors yields unprecedented oscillating current modulations with on/off-ratios of around 70%.

Built-in-polarization field effect on lattice thermal conductivity of AlxGa1-xN/GaN heterostructure

NASA Astrophysics Data System (ADS)

Pansari, Anju; Gedam, Vikas; Kumar Sahoo, Bijaya

2015-12-01

The built-in-polarization field at the interface of AlxGa1-xN/GaN heterostructure enhances elastic constant, phonon velocity, Debye temperature and their bowing constants of barrier material AlxGa1-xN. The combined phonon relaxation time of acoustics phonons has been computed for with and without built-in-polarization field at room temperature for different aluminum (Al) content (x). Our result shows that the built-in-polarization field suppresses the scattering mechanisms and enhances the combined relaxation time. The thermal conductivity of AlxGa1-xN has been estimated as a function of temperature for x=0, 0.1, 0.5 and 1 for with and without polarization field. Minimum thermal conductivity has been observed for x=0.1 and 0.5. Analysis shows that up to a certain temperature (different for different x) the polarization field acts as negative effect and reduces the thermal conductivity and after this temperature thermal conductivity is significantly contributed by polarization field. This signifies pyroelectric character of AlxGa1-xN. The pyroelectric transition temperature of AlxGa1-xN alloy has been predicted for different x. Our study reports that room temperature thermal conductivity of AlxGa1-xN/GaN heterostructure is enhanced by built-in-polarization field. The temperature dependence of thermal conductivity for x=0.1 and 0.5 are in line with prior experimental studies. The method we have developed can be used for the simulation of heat transport in nitride devices to minimize the self heating processes and in polarization engineering strategies to optimize the thermoelectric performance of AlxGa1-xN/GaN heterostructures.

P-channel differential multiple-time programmable memory cells by laterally coupled floating metal gate fin field-effect transistors

NASA Astrophysics Data System (ADS)

Wang, Tai-Min; Chien, Wei-Yu; Hsu, Chia-Ling; Lin, Chrong Jung; King, Ya-Chin

2018-04-01

In this paper, we present a new differential p-channel multiple-time programmable (MTP) memory cell that is fully compatible with advanced 16 nm CMOS fin field-effect transistors (FinFET) logic processes. This differential MTP cell stores complementary data in floating gates coupled by a slot contact structure, which make different read currents possible on a single cell. In nanoscale CMOS FinFET logic processes, the gate dielectric layer becomes too thin to retain charges inside floating gates for nonvolatile data storage. By using a differential architecture, the sensing window of the cell can be extended and maintained by an advanced blanket boost scheme. The charge retention problem in floating gate cells can be improved by periodic restoring lost charges when significant read window narrowing occurs. In addition to high programming efficiency, this p-channel MTP cells also exhibit good cycling endurance as well as disturbance immunity. The blanket boost scheme can remedy the charge loss problem under thin gate dielectrics.

Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2008-11-01

In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

Vortex-slip transitions in superconducting a-NbGe mesoscopic channels

NASA Astrophysics Data System (ADS)

Kokubo, N.; Sorop, T. G.; Besseling, R.; Kes, P. H.

2006-06-01

Intriguing and novel physical aspects related to the vortex flow dynamics have been recently observed in mesoscopic channel devices of a-NbGe with NbN channel edges. In this work we have systematically studied the flow properties of vortices confined in such mesoscopic channels as a function of the magnetic field history, using dc-transport and mode-locking (ML) measurements. As opposed to the field-down situation, in the field-up case a kink anomaly in the dc I-V curves is detected. The mode-locking measurements reveal that this anomaly is, in fact, a flow induced vortex slip transition: by increasing the external drive (either dc or ac) a sudden change occurs from n to n+2 moving vortex rows in the channel. The observed features can be explained in terms of an interplay between field focusing due to screening currents and a change in the predominant pinning mechanism.

Simulating the Activation of Voltage Sensing Domain for a Voltage-Gated Sodium Channel Using Polarizable Force Field.

PubMed

Sun, Rui-Ning; Gong, Haipeng

2017-03-02

Voltage-gated sodium (Na V ) channels play vital roles in the signal transduction of excitable cells. Upon activation of a Na V channel, the change of transmembrane voltage triggers conformational change of the voltage sensing domain, which then elicits opening of the pore domain and thus allows an influx of Na + ions. Description of this process with atomistic details is in urgent demand. In this work, we simulated the partial activation process of the voltage sensing domain of a prokaryotic Na V channel using a polarizable force field. We not only observed the conformational change of the voltage sensing domain from resting to preactive state, but also rigorously estimated the free energy profile along the identified reaction pathway. Comparison with the control simulation using an additive force field indicates that voltage-gating thermodynamics of Na V channels may be inaccurately described without considering the electrostatic polarization effect.

Electromagnetic fields act via activation of voltage-gated calcium channels to produce beneficial or adverse effects

PubMed Central

Pall, Martin L

2013-01-01

The direct targets of extremely low and microwave frequency range electromagnetic fields (EMFs) in producing non-thermal effects have not been clearly established. However, studies in the literature, reviewed here, provide substantial support for such direct targets. Twenty-three studies have shown that voltage-gated calcium channels (VGCCs) produce these and other EMF effects, such that the L-type or other VGCC blockers block or greatly lower diverse EMF effects. Furthermore, the voltage-gated properties of these channels may provide biophysically plausible mechanisms for EMF biological effects. Downstream responses of such EMF exposures may be mediated through Ca2+/calmodulin stimulation of nitric oxide synthesis. Potentially, physiological/therapeutic responses may be largely as a result of nitric oxide-cGMP-protein kinase G pathway stimulation. A well-studied example of such an apparent therapeutic response, EMF stimulation of bone growth, appears to work along this pathway. However, pathophysiological responses to EMFs may be as a result of nitric oxide-peroxynitrite-oxidative stress pathway of action. A single such well-documented example, EMF induction of DNA single-strand breaks in cells, as measured by alkaline comet assays, is reviewed here. Such single-strand breaks are known to be produced through the action of this pathway. Data on the mechanism of EMF induction of such breaks are limited; what data are available support this proposed mechanism. Other Ca2+-mediated regulatory changes, independent of nitric oxide, may also have roles. This article reviews, then, a substantially supported set of targets, VGCCs, whose stimulation produces non-thermal EMF responses by humans/higher animals with downstream effects involving Ca2+/calmodulin-dependent nitric oxide increases, which may explain therapeutic and pathophysiological effects. PMID:23802593

Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Liu, Yan; Lin, Zhaojun; Cui, Peng; Zhao, Jingtao; Fu, Chen; Yang, Ming; Lv, Yuanjie

2017-08-01

Using a suitable dual-gate structure, the source-to-drain resistance (RSD) of AlGaN/AlN/GaN heterostructure field-effect transistor (HFET) with varying gate position has been studied at room temperature. The theoretical and experimental results have revealed a dependence of RSD on the gate position. The variation of RSD with the gate position is found to stem from the polarization Coulomb field (PCF) scattering. This finding is of great benefit to the optimization of the performance of AlGaN/AlN/GaN HFET. Especially, when the AlGaN/AlN/GaN HFET works as a microwave device, it is beneficial to achieve the impedance matching by designing the appropriate gate position based on PCF scattering.

Mechanism of HERG potassium channel inhibition by tetra-n-octylammonium bromide and benzethonium chloride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Long, Yan; Lin, Zuoxian; Xia, Menghang

Tetra-n-octylammonium bromide and benzethonium chloride are synthetic quaternary ammonium salts that are widely used in hospitals and industries for the disinfection and surface treatment and as the preservative agent. Recently, the activities of HERG channel inhibition by these compounds have been found to have potential risks to induce the long QT syndrome and cardiac arrhythmia, although the mechanism of action is still elusive. This study was conducted to investigate the mechanism of HERG channel inhibition by these compounds by using whole-cell patch clamp experiments in a CHO cell line stably expressing HERG channels. Tetra-n-octylammonium bromide and benzethonium chloride exhibited concentration-dependentmore » inhibitions of HERG channel currents with IC{sub 50} values of 4 nM and 17 nM, respectively, which were also voltage-dependent and use-dependent. Both compounds shifted the channel activation I–V curves in a hyperpolarized direction for 10–15 mV and accelerated channel activation and inactivation processes by 2-fold. In addition, tetra-n-octylammonium bromide shifted the inactivation I–V curve in a hyperpolarized direction for 24.4 mV and slowed the rate of channel deactivation by 2-fold, whereas benzethonium chloride did not. The results indicate that tetra-n-octylammonium bromide and benzethonium chloride are open-channel blockers that inhibit HERG channels in the voltage-dependent, use-dependent and state-dependent manners. - Highlights: ► Tetra-n-octylammonium and benzethonium are potent HERG channel inhibitors. ► Channel activation and inactivation processes are accelerated by the two compounds. ► Both compounds are the open-channel blockers to HERG channels. ► HERG channel inhibition by both compounds is use-, voltage- and state dependent. ► The in vivo risk of QT prolongation needs to be studied for the two compounds.« less

N-acetylcysteine-induced vasodilation involves voltage-gated potassium channels in rat aorta.

PubMed

Han, Wei-Qing; Zhu, Ding-Liang; Wu, Ling-Yun; Chen, Qi-Zhi; Guo, Shu-Jie; Gao, Ping-Jin

2009-05-22

N-acetylcysteine (NAC) has a protective effect against vascular dysfunction by decreasing the level of reactive oxygen species (ROS) in experimental and human hypertension. This study was designed to examine whether NAC would relax vascular rings in vitro via nitric oxide-cyclic guanosine monophosphate (NO-cGMP) pathway, extracellular Ca2+ and/or K+ channels. Rat aortic arteries were mounted in an organ bath, contracted with 0.1, 0.5 or 1 micromol/L phenylephrine to plateau, and the vasodilatory effect of NAC was examined in the absence or presence of ROS scavengers, inhibitors of NO-cGMP pathway or K+ channels. Vascular smooth muscle cells (VSMCs) were loaded with a calcium sensitive fluorescent dye fluo-3 AM, and [Ca2+](i) was determined with laser-scanning confocal microscopy. NAC (0.1-4 mmol/L) dose-dependently relaxed rat aorta pre-contracted with phenylephrine. Endothelium removal, endothelial nitric oxide synthase inhibitor N(omega)-Nitro-l-arginine (L-NNA) (100 micromol/L) or soluble guanylyl cyclase (sGC) inhibitor (ODQ) (10 micromol/L) did not affect NAC-induced vasodilation. In contrast, NAC-induced vasodilation was blunted after extracellular calcium was removed and calcium imaging showed that 4 mmol/L NAC quickly decreased [Ca2+](i) in fluo-3 AM loaded VSMCs. NAC-induced vasodilation was significantly reduced in the presence of voltage-gated K+ channels (Kv) inhibitor 4-aminopyridine (4-AP). The vasodilatory effect of NAC may be explained at least partly by activation of voltage-gated K+ channels.

Computational study of graphene-based vertical field effect transistor

NASA Astrophysics Data System (ADS)

Chen, Wenchao; Rinzler, Andrew; Guo, Jing

2013-03-01

Poisson and drift-diffusion equations are solved in a three-dimensional device structure to simulate graphene-based vertical field effect transistors (GVFETs). Operation mechanisms of the GVFET with and without punched holes in the graphene source contact are presented and compared. The graphene-channel Schottky barrier can be modulated by gate electric field due to graphene's low density of states. For the graphene contact with punched holes, the contact barrier thinning and lowering around punched hole edge allow orders of magnitude higher tunneling current compared to the region away from the punched hole edge, which is responsible for significant performance improvement as already verified by experiments. Small hole size is preferred due to less electrostatic screening from channel inversion layer, which gives large electric field around the punched hole edge, thus, leading to a thinner and lower barrier. Bilayer and trilayer graphenes as the source contact degrade the performance improvement because stronger electrostatic screening leads to smaller contact barrier lowering and thinning. High punched hole area percentage improves current performance by allowing more gate electric field to modulate the graphene-channel barrier. Low effective mass channel material gives better on-off current ratio.

The effect of passive mixing on pressure drop and oxygen mass fraction using opposing channel flow field design in a Proton Exchange Membrane Fuel Cell

NASA Astrophysics Data System (ADS)

Singh, Anant Bir

This study investigates a flow field with opposing channel design. Previous studies on flow field designs have been focused on improving fuel utilization which often leads to increased pressure drop. This increased pressure drop is typical because standard designs employ either a single flow channel to clear blockages or dead end condition to force the flow through the gas diffusion layer. The disadvantage with these designs is the increased resistance to the flow which requires higher pressure, which becomes a parasitic loss that lowers the system efficiency. For this study the focus was to reduce the pressure drop by providing a less resistive path to the flow. To achieve a less resistive path, the inlet channel was split into two opposing channels. These channels are then recombined only to be split again for the next leg. Therefore, the split channel design should reduce the pressure drop which reduces the parasitic load and ultimately contributes to higher system efficiency. In addition the recombining of the streams at each leg should induce mixing. Having opposing channels should also increase cross flow under the lands to reduce mass transfer loses. The cathode side of the fuel cell is especially sensitive to the mass transport losses since air (oxygen mixed with nitrogen) is used for supplying oxygen unlike the anode side which uses pure hydrogen. To test the hypothesis of having benefits from an opposing channel design, both an experimental and analytical approach was taken. For the experiment, a serpentine flow field and opposing channel flow field plates were compared over several flow rates with compressed air. To test the hypothesis of increased mass transfer, the two flow fields were modeled using a CFD software package, COMSOL. It was found that the opposing channel configuration for high flow rate with multiple entry and exit conditions exhibited significant improvement over the single serpentine channel. Pressure drop was ⅓ less than the

Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung

2013-09-01

This work investigates the channel hot carrier (CHC) effect in HfO2/Ti1-xNx p-channel metal oxide semiconductor field effect transistors (p-MOSFETs). Generally, the subthreshold swing (S.S.) should increase during CHC stress (CHCS), since interface states will be generated near the drain side under high electric field due to drain voltage (Vd). However, our experimental data indicate that S.S. has no evident change under CHCS, but threshold voltage (Vth) shifts positively. This result can be attributed to hot carrier injected into high-k dielectric near the drain side. Meanwhile, it is surprising that such Vth degradation is not observed in the saturation region during stress. Therefore, drain-induced-barrier-lowering (DIBL) as a result of CHC-induced electron trapping is proposed to explain the different Vth behaviors in the linear and saturation regions. Additionally, the influence of different nitrogen concentrations in HfO2/Ti1-xNx p-MOSFETs on CHCS is also investigated in this work. Since nitrogen diffuses to SiO2/Si interface induced pre-Nit occurring to degrades channel mobility during the annealing process, a device with more nitrogen shows slightly less impact ionization, leading to insignificant charge trapping-induced DIBL behavior.

Effect of channel-width and chirality on graphene field-effect transistor based real-time biomolecule sensing

NASA Astrophysics Data System (ADS)

Lyu, Letian; Jaswal, Perveshwer; Xu, Guangyu

2018-03-01

Graphene field-effect transistors (GFET) hold promise in biomolecule sensing due to the outstanding properties of graphene materials. Charges in biomolecules are transduced into a change in the GFET current, which allows real-time monitoring of the biomolecule concentrations. Here we theoretically evaluate the performance of GFET based real-time biomolecule sensing, aiming to better understand the width-scaling limit in GFET based biosensors. In particular, we study the effect of the channel-width and the chirality on FET sensitivity by taking the percentage change of the FET current per unit charge density as the sensing signal. Firstly, GFETs made of graphene nanoribbons (GNR) and graphene sheets (GS) show comparable sensing signals to each other when gated at 1011 - 1012 cm-2 carrier densities. Sensing signals in GNRs are enhanced when gated near the sub-band thresholds, and increase their values in wider GNRs due to the change in device conductance and quantum capacitance. Secondly, the GNR chirality is found to fine tune the sensing signals. Armchair GNRs with smaller energy bandgaps appear to have an enhanced sensing signal close to 1011 cm-2 carrier densities. These results may help understand the scaling limit in GFET based biosensors along the width direction, and shed light on forming all-electrical bio-arrays.

Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices

NASA Astrophysics Data System (ADS)

Baykan, Mehmet Onur

dependent strain response of tri-gate p-type FinFETs are experimentally extracted using a 4-point bending jig. It is found that the low-field piezoresistance coefficient of p-type FinFETs can be modeled by using a weighted conductance average of the top and sidewall bulk piezoresistance coefficients. Next, the strain enhancement of p-type ballistic silicon nanowire MOSFETs is studied using sp3d 5s* basis nearest-neighbor tight-binding simulations coupled with a semiclassical top-of-the-barrier transport model. Size and orientation dependent strain enhancement of ballistic hole transport is explained by the strain-induced modification of the 1D nanowire valence band density-of-states. Further insights are provided for future p-type high-performance silicon nanowire logic devices. A physics based investigation is conducted to understand the strain effects on surface roughness limited electron mobility in silicon inversion layers. Based on the evidence from electrical and material characterization, a strain-induced surface morphology change is hypothesized. To model the observed electrical characteristics, we have employed a self-consistent MOSFET mobility simulator coupled with an ad hoc strain-induced roughness modification. The strain induced surface morphology change is found to be consistent among electrical and materials characterization, as well as transport simulations. In order to bridge the gap between the drift-diffusion based models for long-channel devices and the quasi-ballistic models for nanoscale channels, a unified carrier transport model is developed using an updated one-flux theory. Including the high-field and carrier confinement effects, a surface-potential based analytical transmission expression is obtained for the entire MOSFET operation range. With the new channel transmission equation and average carrier drift velocity, a new expression for channel ballisticity is defined. Impact of mechanical strain on carrier transport for both nMOSFETs and p

Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter.

PubMed

Park, Junsu; Kim, Minseok; Yeom, Seung-Won; Ha, Hyeon Jun; Song, Hyenggun; Min Jhon, Young; Kim, Yun-Hi; Ju, Byeong-Kwon

2016-06-03

We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly(methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm(2) V(-1) s(-1) for the p-channel and 0.027 cm(2) V(-1) s(-1) for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.

Top-gate organic depletion and inversion transistors with doped channel and injection contact

NASA Astrophysics Data System (ADS)

Liu, Xuhai; Kasemann, Daniel; Leo, Karl

2015-03-01

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields.

PubMed

Duque, Carlos M; Mora-Ramos, Miguel E; Duque, Carlos A

2012-08-31

: In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail.

Long-term effects of L- and N-type calcium channel blocker on uric acid levels and left atrial volume in hypertensive patients.

PubMed

Masaki, Mitsuru; Mano, Toshiaki; Eguchi, Akiyo; Fujiwara, Shohei; Sugahara, Masataka; Hirotani, Shinichi; Tsujino, Takeshi; Komamura, Kazuo; Koshiba, Masahiro; Masuyama, Tohru

2016-11-01

Left ventricular (LV) diastolic dysfunction is associated with hypertension and hyperuricemia. However, it is not clear whether the L- and N-type calcium channel blocker will improve LV diastolic dysfunction through the reduction of uric acid. The aim of this study was to investigate the effects of anti-hypertensive therapy, the L- and N-type calcium channel blocker, cilnidipine or the L-type calcium channel blocker, amlodipine, on left atrial reverse remodeling and uric acid in hypertensive patients. We studied 62 patients with untreated hypertension, randomly assigned to cilnidipine or amlodipine for 48 weeks. LV diastolic function was assessed with the left atrial volume index (LAVI), mitral early diastolic wave (E), tissue Doppler early diastolic velocity (E') and the ratio (E/E'). Serum uric acid levels were measured before and after treatment. After treatment, systolic and diastolic blood pressures equally dropped in both groups. LAVI, E/E', heart rate and uric acid levels decreased at 48 weeks in the cilnidipine group but not in the amlodipine group. The % change from baseline to 48 weeks in LAVI, E wave, E/E' and uric acid levels were significantly lower in the cilnidipine group than in the amlodipine group. Larger %-drop in uric acid levels were associated with larger %-reduction of LAVI (p < 0.01). L- and N-type calcium channel blocker but not L-type calcium channel blocker may improve LV diastolic function in hypertensive patients, at least partially through the decrease in uric acid levels.

Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Zhao, Jingtao; Zhao, Zhenguo; Chen, Zidong; Lin, Zhaojun; Xu, Fukai

2017-12-01

In this study, we have investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with floating gate structures using the measured capacitancevoltage (C-V) and current-voltage (I-V) characteristics. It is found that the two-dimensional electron gas (2DEG) density under the central gate cannot be changed by the floating gate structures. However, the floating gate structures can cause the strain variation in the barrier layer, which lead to the non-uniform distribution of the polarization charges, then induce a polarization Coulomb field and scatter the 2DEG. More floating gate structures and closer distance between the floating gates and the central gate will result in stronger scattering effect of the 2DEG.

Combined effects of an intense laser field, electric field and hydrostatic pressure on donor impurity states in zinc-blende InGaN/GaN quantum dots

NASA Astrophysics Data System (ADS)

Wang, Guangxin; Zhou, Rui; Duan, Xiuzhi

2016-07-01

The shallow-donor impurity states in cylindrical zinc-blende (ZB) In x Ga1- x N/GaN quantum dots (QDs) have been theoretically investigated, considering the combined effects of an intense laser field (ILF), an external electric field, and hydrostatic pressure. The numerical results show that for an on-center impurity in ZB In x Ga1- x N/GaN QD, (1) the ground-state binding energy of the donor impurity is a decreasing function of the laser-dressing parameter and/or the QD's height; (2) as the QD's radius decreases, the binding energy of the donor impurity increases at first, reaches a maximum value, and then drops rapidly; (3) the binding energy of the donor impurity is a decreasing function of the external electric field due to the Stark effect; (4) the binding energy of the donor impurity increases as the applied hydrostatic pressure becomes large. In addition, the position of the impurity ion was also found to have an important influence on the binding energy of the donor impurity. The physical reasons have been analyzed in detail.

Analysis of a Near Field MIMO Wireless Channel Using 5.6 GHz Dipole Antennas

NASA Astrophysics Data System (ADS)

Maricar, Mohamed Ismaeel; Gradoni, Gabriele; Greedy, Steve; Ivrlac, Michel T.; Nossek, Josef A.; Phang, Sendy; Creagh, Stephen C.; Tanner, Gregor; Thomas, David W. P.

2016-05-01

Understanding the impact of interference upon the performance of a multiple input multiple output (MIMO) based device is of paramount importance in ensuring a design is both resilient and robust. In this work the effect of element-element interference in the creation of multiple channels of a wireless link approaching the near-field regime is studied. The elements of the 2-antenna transmit- and receive-arrays are chosen to be identical folded dipole antennas operating at 5.6 GHz. We find that two equally strong channels can be created even if the antennas interact at sub-wavelength distances, thus confirming previous theoretical predictions.

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

PubMed Central

2012-01-01

In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail. PMID:22937963

Laser-driven electron acceleration in a plasma channel with an additional electric field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Li-Hong; Xue, Ju-Kui, E-mail: xuejk@nwnu.edu.cn; Liu, Jie, E-mail: liu-jie@iapcm.ac.cn

2016-05-15

We examine the electron acceleration in a two-dimensional plasma channel under the action of a laser field and an additional static electric field. We propose to design an appropriate additional electric field (its direction and location), in order to launch the electron onto an energetic trajectory. We find that the electron acceleration strongly depends on the coupled effects of the laser polarization, the direction, and location of the additional electric field. The additional electric field affects the electron dynamics by changing the dephasing rate. Particularly, a suitably designed additional electric field leads to a considerable energy gain from the lasermore » pulse after the interaction with the additional electric field. The electron energy gain from the laser with the additional electric field can be much higher than that without the additional electric field. This engineering provides a possible means for producing high energetic electrons.« less

Influence of channel base current and varying return stroke speed on the calculated fields of three important return stroke models

NASA Technical Reports Server (NTRS)

Thottappillil, Rajeev; Uman, Martin A.; Diendorfer, Gerhard

1991-01-01

Compared here are the calculated fields of the Traveling Current Source (TCS), Modified Transmission Line (MTL), and the Diendorfer-Uman (DU) models with a channel base current assumed in Nucci et al. on the one hand and with the channel base current assumed in Diendorfer and Uman on the other hand. The characteristics of the field wave shapes are shown to be very sensitive to the channel base current, especially the field zero crossing at 100 km for the TCS and DU models, and the magnetic hump after the initial peak at close range for the TCS models. Also, the DU model is theoretically extended to include any arbitrarily varying return stroke speed with height. A brief discussion is presented on the effects of an exponentially decreasing speed with height on the calculated fields for the TCS, MTL, and DU models.

Spectral features and voltage effects in high-field electroluminescence of AlN filamentary nanocrystals

NASA Astrophysics Data System (ADS)

Weinstein, I. A.; Vokhmintsev, A. S.; Chaikin, D. V.; Afonin, Yu. D.

2016-11-01

The high-field electroluminescence (EL) spectra for Al-rich AlN nanowhiskers varying applied voltage were studied. The observed 2.70 eV emission, which can be considered as superposition of two Gaussian bands in 2.75 and 2.53 eV, was analyzed. It was shown that Fowler-Nordheim effect took place in EL mechanism with participation of capturing levels of ON- and VN-centers when AlN nanowhiskers were exposed to an external field of 2.5 ÷ 10 V/μm. Obtained results and made conclusions are in a good agreement with independent electron field emission measurements for different one-dimensional AlN nanostructures.

AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Y.; Li, H.; Robertson, J.

2016-05-28

AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed tomore » its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.« less

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu Shiyang; Nakajima, Anri; Ohashi, Takuo

2005-12-01

The interface trap generation ({delta}N{sub it}) and fixed oxide charge buildup ({delta}N{sub ot}) under negative bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultrathin (2 nm) plasma-nitrided SiON gate dielectrics were studied using a modified direct-current-current-voltage method and a conventional subthreshold characteristic measurement. Different stress time dependences were shown for {delta}N{sub it} and {delta}N{sub ot}. At the earlier stress times, {delta}N{sub it} dominates the threshold voltage shift ({delta}V{sub th}) and {delta}N{sub ot} is negligible. With increasing stress time, the rate of increase of {delta}N{sub it} decreases continuously, showing a saturating trend for longer stress times, while {delta}N{submore » ot} still has a power-law dependence on stress time so that the relative contribution of {delta}N{sub ot} increases. The thermal activation energy of {delta}N{sub it} and the NBTI lifetime of pMOSFETs, compared at a given stress voltage, are independent of the peak nitrogen concentration of the SiON film. This indicates that plasma nitridation is a more reliable method for incorporating nitrogen in the gate oxide.« less

[Effects of carrier liquid and flow rate on the separation in gravitational field-flow fractionation].

PubMed

Guo, Shuang; Zhu, Chenqi; Gao-Yang, Yaya; Qiu, Bailing; Wu, Di; Liang, Qihui; He, Jiayuan; Han, Nanyin

2016-02-01

Gravitational field-flow fractionation is the simplest field-flow fractionation technique in terms of principle and operation. The earth' s gravity is its external field. Different sized particles are injected into a thin channel and carried by carrier fluid. The different velocities of the carrier liquid in different places results in a size-based separation. A gravitational field-flow fractionation (GrFFF) instrument was designed and constructed. Two kinds of polystyrene (PS) particles with different sizes (20 µm and 6 µm) were chosen as model particles. In this work, the separation of the sample was achieved by changing the concentration of NaN3, the percentage of mixed surfactant in the carrier liquid and the flow rate of carrier liquid. Six levels were set for each factor. The effects of these three factors on the retention ratio (R) and plate height (H) of the PS particles were investigated. It was found that R increased and H decreased with increasing particle size. On the other hand, the R and H increased with increasing flow rate. The R and H also increased with increasing NaN3 concentration. The reason was that the electrostatic repulsive force between the particles and the glass channel wall increased. The force allowed the samples approach closer to the channel wall. The results showed that the resolution and retention time can be improved by adjusting the experimental conditions. These results can provide important values to the further applications of GrFFF technique.

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, David A.; Miller, Ross A.; Osinsky, Andrei V.; Downey, Brian P.; Storm, David F.; Meyer, David J.; Scott Katzer, D.; Nepal, Neeraj

2016-12-01

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of the same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.

Peculiarities of heat transfer at the liquid metal flow in a vertical channel in a coplanar magnetic field

NASA Astrophysics Data System (ADS)

Razuvanov, N. G.; Poddubnyi, I. I.; Kostychev, P. V.

2017-11-01

The research of hydrodynamics and heat transfer at the liquid metal (LM) downward flow and upflow in a vertical duct of a rectangular cross section with a ratio of sides ˜1/3 in a coplanar magnetic field (MF) under conditions of bilateral symmetrical heating is performed. The problem simulates the LM flow in the heat exchange channels for cooling the liquid metal module of the blanket of the thermonuclear reactor (TNR) of the TOKAMAK type. The experiments were carried out on the basis of the mercury magnetohydrodynamic test-bed (MHD) Moscow Power Engineering Institute (MPEI) - Joint Institute for High Temperatures of the Russian Academy of Sciences (JIHT RAS). The probe measurement technique was used in the flow. Profiles of averaged velocity and averaged temperature, as well as profiles of temperature pulsations in the axial planes of the channel cross-section, are obtained; the distribution of the dimensionless wall temperature along the perimeter unfolding of the channel in the section and along the length of the channel. A significant effect of thermogravitational convection (TGC), which leads to unexpected effects, is found. At the downflow in a magnetic field, in some modes, low-frequency pulsations of anomalously high intensity occur.

Retinoic acid induction of calcium channel expression in human NT2N neurons.

PubMed

Gao, Z Y; Xu, G; Stwora-Wojczyk, M M; Matschinsky, F M; Lee, V M; Wolf, B A

1998-06-18

Ca2+ channel expression and regulation of intracellular Ca2+ homeostasis were studied during retinoic acid (RA)-induced differentiation of the human teratocarcinoma cell line Ntera 2/C1.D1 (NT2- cells) into NT2N neurons, a unique model of human neurons in culture. The cytosolic Ca2+ level of undifferentiated NT2- cells was low (75 +/- 5 nM) and stable under basal conditions, and it was only marginally decreased (by 9%) upon removal of extracellular Ca2+. After 10 microM RA treatment, NT2- cells were irreversibly differentiated into a phenotype of neuron-like NT2N cells. Cytosolic Ca2+ level of NT2N neurons was higher (106 +/- 14 nM) than that of NT2- cells and spontaneously fluctuated (0.208 +/- 0.038 transients/min) under basal conditions. Although K+ increased 86Rb fluxes in both NT2- cells and NT2N neurons, it only increased cytosolic Ca2+ level in NT2N neurons. The K+-induced increase in cytosolic Ca2+ in NT2N neurons was antagonized by 0.1-10 microM nifedipine or verapamil, 5 microM omega-CgTx GVIA, but not by 1 microM omega-agatoxin IVA, 1 microM omega-agatoxin TK, 1 microM FTX-3.3, or 100 microM Ni+ implicating L- and N-type voltage-dependent Ca2+ channels. In L- and N-type channels, but not in P- and Q-types, mRNAs were expressed in NT2N neurons as well as NT2- cells. Quantitative analysis of L- and N-type Ca2+ protein levels showed major differences between NT2- cells and NT2N neurons. In NT2- cells, N-type Ca2+ channels were undetectable while L-type channels levels were fivefold lower compared to NT2N neurons. Our findings show that L- and N-type channels are expressed during differentiation of NT2- cells into neurons, and that these voltage-dependent Ca2+ channels have a major role in regulating intracellular Ca2+ homeostasis and neuronal excitability. Copyright 1998 Academic Press.

Analyte chemisorption and sensing on n- and p-channel copper phthalocyanine thin-film transistors.

PubMed

Yang, Richard D; Park, Jeongwon; Colesniuc, Corneliu N; Schuller, Ivan K; Royer, James E; Trogler, William C; Kummel, Andrew C

2009-04-28

Chemical sensing properties of phthalocyanine thin-film transistors have been investigated using nearly identical n- and p-channel devices. P-type copper phthalocyanine (CuPc) has been modified with fluorine groups to convert the charge carriers from holes to electrons. The sensor responses to the tight binding analyte dimethyl methylphosphonate (DMMP) and weak binding analyte methanol (MeOH) were compared in air and N(2). The results suggest that the sensor response involves counterdoping of pre-adsorbed oxygen (O(2)). A linear dependence of chemical response to DMMP concentration was observed in both n- and p- type devices. For DMMP, there is a factor of 2.5 difference in the chemical sensitivity between n- and p-channel CuPc thin-film transistors, even though it has similar binding strength to n- and p-type CuPc molecules as indicated by the desorption times. The effect is attributed to the difference in the analyte perturbation of electron and hole trap energies in n- and p-type materials.

Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

PubMed

Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

2016-12-01

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

Lightning Return-Stroke Current Waveforms Aloft, From Measured Field Change, Current, and Channel Geometry

NASA Technical Reports Server (NTRS)

Willett, J. C.; LeVine, D. M.

2002-01-01

Direct current measurements are available near the attachment point from both natural cloud-to-ground lightning and rocket-triggered lightning, but little is known about the rise time and peak amplitude of return-stroke currents aloft. We present, as functions of height, current amplitudes, rise times, and effective propagation velocities that have been estimated with a novel remote-sensing technique from data on 24 subsequent return strokes in six different lightning flashes that were triggering at the NASA Kennedy Space Center, FL, during 1987. The unique feature of this data set is the stereo pairs of still photographs, from which three-dimensional channel geometries were determined previously. This has permitted us to calculate the fine structure of the electric-field-change (E) waveforms produced by these strokes, using the current waveforms measured at the channel base together with physically reasonable assumptions about the current distributions aloft. The computed waveforms have been compared with observed E waveforms from the same strokes, and our assumptions have been adjusted to maximize agreement. In spite of the non-uniqueness of solutions derived by this technique, several conclusions seem inescapable: 1) The effective propagation speed of the current up the channel is usually significantly (but not unreasonably) faster than the two-dimensional velocity measured by a streak camera for 14 of these strokes. 2) Given the deduced propagation speed, the peak amplitude of the current waveform often must decrease dramatically with height to prevent the electric field from being over-predicted. 3) The rise time of the current wave front must always increase rapidly with height in order to keep the fine structure of the calculated field consistent with the observations.

High-performance PbS quantum dot vertical field-effect phototransistor using graphene as a transparent electrode

NASA Astrophysics Data System (ADS)

Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Zhang, Haiting; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

2016-12-01

Solution processed photoactive PbS quantum dots (QDs) were used as channel in high-performance near-infrared vertical field-effect phototransistor (VFEpT) where monolayer graphene embedded as transparent electrode. In this vertical architecture, the PbS QD channel was sandwiched and naturally protected between the drain and source electrodes, which made the device ultrashort channel length (110 nm) simply the thickness of the channel layer. The VFEpT exhibited ambipolar operation with high mobilities of μe = 3.5 cm2/V s in n-channel operation and μh = 3.3 cm2/V s in p-channel operation at low operation voltages. By using the photoactive PbS QDs as channel material, the VFEpT exhibited good photoresponse properties with a responsivity of 4.2 × 102 A/W, an external quantum efficiency of 6.4 × 104% and a photodetectivity of 2.1 × 109 Jones at the light irradiance of 36 mW/cm2. Additionally, the VFEpT showed excellent on/off switching with good stability and reproducibility and fast response speed with a short rise time of 12 ms in n-channel operation and 10.6 ms in p-channel operation. These high mobilities, good photoresponse properties and simplistic fabrication of our VFEpTs provided a facile route to the high-performance inorganic photodetectors.

Charged and Neutral Particles Channeling Phenomena Channeling 2008

NASA Astrophysics Data System (ADS)

Dabagov, Sultan B.; Palumbo, Luigi

2010-04-01

-- Probing channeling radiation influenced by ultrasound / W. Wagner ... [et al.] -- Radiation characteristics under electrons planar channeling and quasichanneling in complex crystals / L. Gevorgian -- Formation of relativistic positron atoms by axially channeled positrons and their decay on [symbol]-rays / A. Gevorkyan, A. R. Mkrtchyan and K. Oganesyan -- New features of diffracted channeling radiation from electrons in Si and LiF Crystals / K. B. Korotchenko, Yu. L. Pivovarov and T. A. Tukhfatullin -- Modulated particle beam in a crystal channel / A. Kostyuk ... [et al.] -- Computer simulations of resonant coherent excitation of heavy hydrogenlike ions under planar channeling / A. A. Babaev and Yu. L. Pivovarov -- Parametric x-ray and diffracted transition radiation of 4.5 GeV electrons in diamond / R. O. Avakian ... [et al.] -- Possible use of small accelerators in student laboratory for engineering education / I. Endo, M. Tanaka and T. Yoshimura.The Status of the SPARC Project / A. Cianchi -- Laser-plasma acceleration: first experimental results from the Plasmon-X Project / L. A. Gizzi ... [et al.] -- The powerful nanosecond duration electron beam effect on the crystalline tungsten target / Y. N. Adischev ... [et al.] -- "Shadowing" of the electromagnetic field of a relativistic electron / G. Naumenko ... [et al.] -- The acceleration of the charged particles in a low temperature acoustoplasma / A. S. Abrahamyan, A. R. Mkrtchyan and R. B. Kostanyan -- The experimental study of the surface current excitation by a relativistic electron electromagnetic field / G. A. Naumenko ... [et al.] -- Synchrotron radiation from a charge moving along helical orbit around a dielectric cylinder / A. A. Saharian and A. S. Kotanjyan -- Particle acceleration in a helical wave guide / X. Artru and C. Ray -- Effect of heavy ion charge fluctuations on Cherenkov radiation / V. S. Malyshevsky -- Hard photons powerful radiation of electron bunch interacting with plasma beat waves / A. Shamamian

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

NASA Astrophysics Data System (ADS)

Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

2018-06-01

In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

Simultaneous protection of organic p- and n-channels in complementary inverter from aging and bias-stress by DNA-base guanine/Al2O3 double layer.

PubMed

Lee, Junyeong; Hwang, Hyuncheol; Min, Sung-Wook; Shin, Jae Min; Kim, Jin Sung; Jeon, Pyo Jin; Lee, Hee Sung; Im, Seongil

2015-01-28

Although organic field-effect transistors (OFETs) have various advantages of lightweight, low-cost, mechanical flexibility, and nowadays even higher mobility than amorphous Si-based FET, stability issue under bias and ambient condition critically hinder its practical application. One of the most detrimental effects on organic layer comes from penetrated atmospheric species such as oxygen and water. To solve such degradation problems, several molecular engineering tactics are introduced: forming a kinetic barrier, lowering the level of molecule orbitals, and increasing the band gap. However, direct passivation of organic channels, the most promising strategy, has not been reported as often as other methods. Here, we resolved the ambient stability issues of p-type (heptazole)/or n-type (PTCDI-C13) OFETs and their bias-stability issues at once, using DNA-base small molecule guanine (C5H5N5O)/Al2O3 bilayer. The guanine protects the organic channels as buffer/and H getter layer between the channels and capping Al2O3, whereas the oxide capping resists ambient molecules. As a result, both p-type and n-type OFETs are simultaneously protected from gate-bias stress and 30 days-long ambient aging, finally demonstrating a highly stable, high-gain complementary-type logic inverter.

A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie

2018-01-01

A new method to determine the two-dimensional electron gas (2DEG) density distribution of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) after the Si3N4 passivation process has been presented. Detailed device characteristics were investigated and better transport properties have been observed for the passivated devices. The strain variation and the influence of the surface trapping states were analyzed. By using the polarization Coulomb field (PCF) scattering theory, the 2DEG density after passivation was both quantitively and qualitatively determined, which has been increased by 45% under the access regions and decreased by 2% under the gate region.

Metal-Assisted Channel Stabilization: Disposition of a Single Histidine on the N-terminus of Alamethicin Yields Channels with Extraordinarily Long Lifetimes

PubMed Central

Noshiro, Daisuke; Asami, Koji; Futaki, Shiroh

2010-01-01

Abstract Alamethicin, a member of the peptaibol family of antibiotics, is a typical channel-forming peptide with a helical structure. The self-assembly of the peptide in the membranes yields voltage-dependent channels. In this study, three alamethicin analogs possessing a charged residue (His, Lys, or Glu) on their N-termini were designed with the expectation of stabilizing the transmembrane structure. A slight elongation of channel lifetime was observed for the Lys and Glu analogs. On the other hand, extensive stabilization of certain channel open states was observed for the His analog. This stabilization was predominantly observed in the presence of metal ions such as Zn2+, suggesting that metal coordination with His facilitates the formation of a supramolecular assembly in the membranes. Channel stability was greatly diminished by acetylation of the N-terminal amino group, indicating that the N-terminal amino group also plays an important role in metal coordination. PMID:20441743

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Hung, Ting-Hsiang; Akyol, Fatih

2014-12-29

We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the samemore » operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.« less

Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

NASA Astrophysics Data System (ADS)

Liu, Xiangyu; Hu, Huiyong; Wang, Meng; Zhang, Heming; Cui, Shimin; Shu, Bin; Wang, Bin

2018-01-01

In this paper, a fully-depleted (FD) Ge double-gate (DG) n-type Tunneling Field-Effect Transistors (TFET) structure is studied in detail by two-dimensional numerical simulation. The simulation results indicated that the on-state current Ion and on-off ratio of the FD Ge DG-TFET increases about 1 order of magnitude comparing with the Conventional Ge DG-TFET, and Ion=3.95×10-5 A/μm and the below 60 mV/decade subthreshold swing S=26.4 mV/decade are achieved with the length of gate LD=20 nm, the workfuntion of metal gate Φm=0.2 eV and the doping concentration of n+-type-channel ND=1×1018 cm-3. Moreover, the impacts of Φm, ND and LD are investigated. The simulation results indicated that the off-state current Ioff includes the tunneling current at the middle of channel IB the gated-induced drain leakage (GIDL) current IGIDL. With optimized Φm and ND, Ioff is reduced about 2 orders of magnitude to 2.5×10-13 A/μm with LD increasing from 40 nm to 100 nm, and on-off ratio is increased to 1.58×107.

Flood tolerance evaluation of bottomland oaks in a multi-channel field laboratory

Treesearch

Mark V. Coggeshall; J. W. Van Sambeek; Scott E. Schlarbaum

2005-01-01

A multi-channel field laboratory was designed and constructed by the University of Missouri Center for Agroforestry at the Horticulture and Agroforestry Research Center to assess the flood tolerance of forages and hardwood seedlings. This facility located in the Missouri River floodplain consists of twelve 6-m wide x 180-m long channels that had minimal disturbance to...

A computational study of a novel graphene nanoribbon field effect transistor

NASA Astrophysics Data System (ADS)

Ghoreishi, Seyed Saleh; Yousefi, Reza

2017-04-01

In this paper, using gate structure engineering and modification of channel dopant profile, we propose a new double gate graphene nanoribbon field effect transistor (DG-GNRFET) mainly to suppress the band-to-band tunneling (BTBT) of carriers. In the new device, the intrinsic part of the channel is replaced by an intrinsic-lightly doped-intrinsic (I -N--I) configuration in a way that only the intrinsic parts are covered by the gate contact. Transport characteristics of the device are investigated theoretically using the nonequilibrium Green’s function (NEGF) formalism. Numerical simulations show that off-current, ambipolar behavior, on/off-current ratio and the switching characteristics such as intrinsic delay and power-delay product are improved. In addition, the new device demonstrates better sub-threshold swing and less drain-induced barrier lowering (DIBL).

Simulation of field-induced molecular dissociation in atom-probe tomography: Identification of a neutral emission channel

NASA Astrophysics Data System (ADS)

Zanuttini, David; Blum, Ivan; Rigutti, Lorenzo; Vurpillot, François; Douady, Julie; Jacquet, Emmanuelle; Anglade, Pierre-Matthieu; Gervais, Benoit

2017-06-01

We investigate the dynamics of dicationic metal-oxide molecules under large electric-field conditions, on the basis of ab initio calculations coupled to molecular dynamics. Applied to the case of ZnO2 + in the field of atom probe tomography (APT), our simulation reveals the dissociation into three distinct exit channels. The proportions of these channels depend critically on the field strength and on the initial molecular orientation with respect to the field. For typical field strength used in APT experiments, an efficient dissociation channel leads to emission of neutral oxygen atoms, which escape detection. The calculated composition biases and their dependence on the field strength show remarkable consistency with recent APT experiments on ZnO crystals. Our work shows that bond breaking in strong static fields may lead to significant neutral atom production, and therefore to severe elemental composition biases in measurements.

HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

NASA Astrophysics Data System (ADS)

Rohrbaugh, Nathaniel; Hernandez-Balderrama, Luis; Kaess, Felix; Kirste, Ronny; Collazo, Ramon; Ivanisevic, Albena

2016-06-01

This study examined the conductance sensitivity of AlGaN/GaN field effect transistors in response to varying Hg/HNO3 solutions. FET surfaces were covalently functionalized with phytochelatin-5 peptides in order to detect Hg in solution. Results showed a resilience of peptide-AlGaN/GaN bonds in the presence of strong HNO3 aliquots, with significant degradation in FET ID signal. However, devices showed strong and varied response to Hg concentrations of 1, 10, 100, and 1000 ppm. The gathered statistically significant results indicate that peptide terminated AlGaN/GaN devices are capable of differentiating between Hg solutions and demonstrate device sensitivity.

Magnetic field effect on Poiseuille flow and heat transfer of carbon nanotubes along a vertical channel filled with Casson fluid

NASA Astrophysics Data System (ADS)

Aman, Sidra; Khan, Ilyas; Ismail, Zulkhibri; Salleh, Mohd Zuki; Alshomrani, Ali Saleh; Alghamdi, Metib Said

2017-01-01

Applications of carbon nanotubes, single walls carbon nanotubes (SWCNTs) and multiple walls carbon nanotubes (MWCNTs) in thermal engineering have recently attracted significant attention. However, most of the studies on CNTs are either experimental or numerical and the lack of analytical studies limits further developments in CNTs research particularly in channel flows. In this work, an analytical investigation is performed on heat transfer analysis of SWCNTs and MWCNTs for mixed convection Poiseuille flow of a Casson fluid along a vertical channel. These CNTs are suspended in three different types of base fluids (Water, Kerosene and engine Oil). Xue [Phys. B Condens. Matter 368, 302-307 (2005)] model has been used for effective thermal conductivity of CNTs. A uniform magnetic field is applied in a transverse direction to the flow as magnetic field induces enhancement in the thermal conductivity of nanofluid. The problem is modelled by using the constitutive equations of Casson fluid in order to characterize the non-Newtonian fluid behavior. Using appropriate non-dimensional variables, the governing equations are transformed into the non-dimensional form, and the perturbation method is utilized to solve the governing equations with some physical conditions. Velocity and temperature solutions are obtained and discussed graphically. Expressions for skin friction and Nusselt number are also evaluated in tabular form. Effects of different parameters such as Casson parameter, radiation parameter and volume fraction are observed on the velocity and temperature profiles. It is found that velocity is reduced under influence of the exterior magnetic field. The temperature of single wall CNTs is found greater than MWCNTs for all the three base fluids. Increase in volume fraction leads to a decrease in velocity of the fluid as the nanofluid become more viscous by adding CNTs.

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uren, Michael J.; Cäsar, Markus; Kuball, Martin

2014-06-30

Temperature dependent pulsed and ramped substrate bias measurements are used to develop a detailed understanding of the vertical carrier transport in the buffer layers in a carbon doped GaN power heterojunction field effect transistor. Carbon doped GaN and multiple layers of AlGaN alloy are used in these devices to deliver an insulating and strain relieved buffer with high breakdown voltage capability. However, understanding of the detailed physical mechanism for its operation is still lacking. At the lowest electric fields (<10 MV/m), charge redistribution within the C doped layer is shown to occur by hole conduction in the valence band withmore » activation energy 0.86 eV. At higher fields, leakage between the two-dimensional electron gas and the buffer dominates occurring by a Poole-Frenkel mechanism with activation energy ∼0.65 eV, presumably along threading dislocations. At higher fields still, the strain relief buffer starts to conduct by a field dependent process. Balancing the onset of these leakage mechanisms is essential to allow the build-up of positive rather than negative space charge, and thus minimize bulk-related current-collapse in these devices.« less

Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.

PubMed

Sun, Min-Chul; Kim, Garam; Kim, Sang Wan; Kim, Hyun Woo; Kim, Hyungjin; Lee, Jong-Ho; Shin, Hyungcheol; Park, Byung-Gook

2012-07-01

In order to extend the conventional low power Si CMOS technology beyond the 20-nm node without SOI substrates, we propose a novel co-integration scheme to build horizontal- and vertical-channel MOSFETs together and verify the idea using TCAD simulations. From the fabrication viewpoint, it is highlighted that this scheme provides additional vertical devices with good scalability by adding a few steps to the conventional CMOS process flow for fin formation. In addition, the benefits of the co-integrated vertical devices are investigated using a TCAD device simulation. From this study, it is confirmed that the vertical device shows improved off-current control and a larger drive current when the body dimension is less than 20 nm, due to the electric field coupling effect at the double-gated channel. Finally, the benefits from the circuit design viewpoint, such as the larger midpoint gain and beta and lower power consumption, are confirmed by the mixed-mode circuit simulation study.

Field Investigation of Flow Structure and Channel Morphology at Confluent-Meander Bends

NASA Astrophysics Data System (ADS)

Riley, J. D.; Rhoads, B. L.

2007-12-01

The movement of water and sediment through drainage networks is inevitably influenced by the convergence of streams and rivers at channel confluences. These focal components of fluvial systems produce a complex hydrodynamic environment, where rapid changes in flow structure and sediment transport occur to accommodate the merging of separate channel flows. The inherent geometric and hydraulic change at confluences also initiates the development of distinct geomorphic features, reflected in the bedform and shape of the channel. An underlying assumption of previous experimental and theoretical models of confluence dynamics has been that converging streams have straight channels with angular configurations. This generalized conceptualization was necessary to establish confluence planform as symmetrical or asymmetrical and to describe subsequent flow structure and geomorphic features at confluences. However, natural channels, particularly those of meandering rivers, curve and bend. This property and observation of channel curvature at natural junctions have led to the hypothesis that natural stream and river confluences tend to occur on the concave outer bank of meander bends. The resulting confluence planform, referred to as a confluent-meander bend, was observed over a century ago but has received little scientific attention. This paper examines preliminary data on three-dimensional flow structure and channel morphology at two natural confluent-meander bends of varying size and with differing tributary entrance locations. The large river confluence of the Vermilion River and Wabash River in west central Indiana and the comparatively small junction of the Little Wabash River and Big Muddy Creek in southeastern Illinois are the location of study sites for field investigation. Measurements of time-averaged three-dimensional velocity components were obtained at these confluences with an acoustic Doppler current profiler for flow events with differing momentum ratios. Bed

The influence of the breakdown electric field in the configuration of lightning corona sheath on charge distribution in the channel

NASA Astrophysics Data System (ADS)

Ignjatovic, Milan; Cvetic, Jovan; Heidler, Fridolin; Markovic, Slavoljub; Djuric, Radivoje

2014-11-01

A model of corona sheath that surrounds the thin core of the lightning channel has been investigated by using a generalized traveling current source return stroke model. The lightning channel is modeled by a charged corona sheath that stretches around a highly conductive central core through which the main current flows. The channel core with the negatively charged outer channel sheath forms a strong electric field, with an overall radial orientation. The return stroke process is modeled as the negative leader charge in the corona sheath being discharged by the positive charge coming from the channel core. Expressions that describe how the corona sheath radius evolves during the return stroke are obtained from the corona sheath model, which predicts charge motion within the sheath. The corona sheath model, set forth by Maslowski and Rakov (2006), Tausanovic et al. (2010), Marjanovic and Cvetic (2009), Cvetic et al. (2011) and Cvetic et al. (2012), divides the sheath onto three zones: zone 1 (surrounding the channel core with net positive charge), zone 2 (surrounding zone 1 with negative charge) and zone 3 (the outer zone, representing uncharged virgin air). In the present study, we have assumed a constant electric field inside zone 1, as suggested by experimental research of corona discharges in coaxial geometry conducted by Cooray (2000). The present investigation builds upon previous studies by Tausanovic et al. (2010) and Cvetic et al. (2012) in several ways. The value of the breakdown electric field has been varied for probing its effect on channel charge distribution prior and during the return stroke. With the aim of investigating initial space charge distribution along the channel, total electric field at the outer surface of the channel corona sheath, just before the return stroke, is calculated and compared for various return stroke models. A self-consistent algorithm is applied to the generalized traveling current source return stroke model, so that the

Dust impact effects recorded by the APV-N experiment during Comet Halley encounters

NASA Astrophysics Data System (ADS)

Oberc, P.; Orlowski, D.; Klimov, S.

1986-12-01

During the Vega 1 and 2 comet Halley encounters plasma wave instrument APV-N entered a region of impulsive noise 220,000 km from nucleus. The noise is attributed to dust grain impacts onto spacecraft body. Regression analysis of impact induced effects recorded during flyby shows that from 100,000 km from closest approach most plasma wave spectra measured by APV-N onboard Vega 1 and 2 are significantly influenced by dust impact effects. Signals associated with large dust impacts are directly recorded on the E2 0.1 to 25 Hz electric field waveform channel.

Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

PubMed

Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

2011-08-01

Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) < 70 nA when I(on) > 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

2D modeling based comprehensive analysis of short channel effects in DMG strained VSTB FET

NASA Astrophysics Data System (ADS)

Saha, Priyanka; Banerjee, Pritha; Sarkar, Subir Kumar

2018-06-01

The paper aims to develop two dimensional analytical model of the proposed dual material (DM) Vertical Super Thin Body (VSTB) strained Field Effect Transistor (FET) with focus on its short channel behaviour in nanometer regime. Electrostatic potential across gate/channel and dielectric wall/channel interface is derived by solving 2D Poisson's equation with parabolic approximation method by applying appropriate boundary conditions. Threshold voltage is then calculated by using the criteria of minimum surface potential considering both gate and dielectric wall side potential. Performance analysis of the present structure is demonstrated in terms of potential, electric field, threshold voltage characteristics and subthreshold behaviour by varying various device parameters and applied biases. Effect of application of strain in channel is further explored to establish the superiority of the proposed device in comparison to conventional VSTB FET counterpart. All analytical results are compared with Silvaco ATLAS device simulated data to substantiate the accuracy of our derived model.

Bias temperature instability in tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Mizubayashi, Wataru; Mori, Takahiro; Fukuda, Koichi; Ishikawa, Yuki; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Liu, Yongxun; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Matsukawa, Takashi; Masahara, Meishoku; Endo, Kazuhiko

2017-04-01

We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). The positive BTI and negative BTI mechanisms in TFETs are the same as those in metal-oxide-semiconductor FETs (MOSFETs). In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (V th) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. The BTI lifetime in n- and p-type TFETs is improved by applying a drain bias corresponding to the operation conditions.

DEET (N,N-diethyl-m-toluamide) toxicity to channel catfish Ictalurus punctatus sac fry

USDA-ARS?s Scientific Manuscript database

The combination of open facilities, moisture, and warm weather during channel catfish Ictalurus punctatus spawning season causes mosquito-infestation problems. A common solution to mosquito problems in hatcheries is to use mosquito repellents applied to exposed skin and clothing. DEET (N,N-diethyl-...

Defining photon channels in strong-field physics: the photon-phase Fourier representation

NASA Astrophysics Data System (ADS)

Zeng, Shuo; Zohrabi, Mohammad; Berry, Ben; Ablikim, Utuq; Kling, Nora; Severt, Travis; Jochim, Bethany; Carnes, Kevin; Ben-Itzhak, Itzik; Esry, Brett

2014-05-01

In strong-field physics, complex atomic and molecular dynamics can be steered by the carrier-envelope phase (CEP). The general theory formulated in Refs., provides a rigorous foundation upon which this understanding might be built. By recognizing the underlying periodicity of the time-dependent Schrödinger equation--and thus its solutions--in the CEP, all CEP effects can be understood as the interference of different photon channels. We will show that this understanding can be turned around to extract information on the photon channel by examining the CEP dependence. In particular, by taking the Fourier transform with respect to the CEP, photon channel information can be extracted from both theory and experiment. Through several examples, we will also show that this technique can be applied to any system and provides knowledge of the net numbers of photons absorbed--even in few-cycle pulses--that is not available in any other way. This work was supported by the Chemical Sciences, Geosciences, and Biosciences Division, Office of Basic Energy Sciences, Office of Science, U.S. Department of Energy under Grant No. DE-FG02-86ER13491. The PULSAR laser was provided by Grant No. DE-FG02-09.

Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors.

PubMed

Mao, Ling-Feng; Ning, Huansheng; Li, Xijun

2015-12-01

We report theoretical study of the effects of energy relaxation on the tunneling current through the oxide layer of a two-dimensional graphene field-effect transistor. In the channel, when three-dimensional electron thermal motion is considered in the Schrödinger equation, the gate leakage current at a given oxide field largely increases with the channel electric field, electron mobility, and energy relaxation time of electrons. Such an increase can be especially significant when the channel electric field is larger than 1 kV/cm. Numerical calculations show that the relative increment of the tunneling current through the gate oxide will decrease with increasing the thickness of oxide layer when the oxide is a few nanometers thick. This highlights that energy relaxation effect needs to be considered in modeling graphene transistors.

Isospin-symmetry-breaking effects in A˜70 nuclei within beyond-mean-field approach

NASA Astrophysics Data System (ADS)

Petrovici, A.; Andrei, O.

2015-02-01

Particular isospin-symmetry-breaking probes including Coulomb energy differences (CED), mirror energy differences (MED), and triplet energy differences (TED) manifest anomalies in the A˜70 isovector triplets of nuclei. The structure of proton-rich nuclei in the A˜70 mass region suggests shape coexistence and competition between pairing correlations in different channels. Recent results concerning the interplay between isospin-mixing and shape-coexistence effects on exotic phenomena in A˜70 nuclei obtained within the beyond-mean-field complex Excited Vampir variational model with symmetry projection before variation using a realistic effective interaction in a relatively large model space are presented. Excited Vampir predictions concerning the Gamow-Teller β decay to the odd-odd N=Z 66As and 70Br nuclei correlated with the pair structure analysis in the T=1 and T=0 channel of the involved wave functions are discussed.

High-performance multilayer WSe 2 field-effect transistors with carrier type control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pudasaini, Pushpa Raj; Oyedele, Akinola; Zhang, Cheng

In this paper, high-performance multilayer WSe 2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe 2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe 2 thickness. The carrier type evolves with increasing WSe 2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe 2 as a function of the thickness and the carrier band offsets relative to the metalmore » contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. Finally, this work demonstrates progress towards the realization of high-performance multilayer WSe 2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.« less

High-performance multilayer WSe 2 field-effect transistors with carrier type control

DOE PAGES

Pudasaini, Pushpa Raj; Oyedele, Akinola; Zhang, Cheng; ...

2017-07-06

In this paper, high-performance multilayer WSe 2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe 2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe 2 thickness. The carrier type evolves with increasing WSe 2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe 2 as a function of the thickness and the carrier band offsets relative to the metalmore » contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. Finally, this work demonstrates progress towards the realization of high-performance multilayer WSe 2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.« less

Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

NASA Astrophysics Data System (ADS)

Kim, Kyoung H.; Gordon, Roy G.; Ritenour, Andrew; Antoniadis, Dimitri A.

2007-05-01

Atomic layer deposition (ALD) was used to deposit passivating interfacial nitride layers between Ge and high-κ oxides. High-κ oxides on Ge surfaces passivated by ultrathin (1-2nm) ALD Hf3N4 or AlN layers exhibited well-behaved C-V characteristics with an equivalent oxide thickness as low as 0.8nm, no significant flatband voltage shifts, and midgap density of interface states values of 2×1012cm-1eV-1. Functional n-channel and p-channel Ge field effect transistors with nitride interlayer/high-κ oxide/metal gate stacks are demonstrated.

Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukhopadhyay, A., E-mail: arnabm.electinstru@gmail.com; Banerjee, L.; Sengupta, A.

We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction,more » by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects.« less

Frequency bandwidth limitation of external pulse electric fields in cylindrical micro-channel electrophoresis with analyte velocity modulation.

PubMed

Wang, Shau-Chun; Chen, Hsiao-Ping; Lee, Chia-Yu; Yeo, Leslie Y

2005-04-15

In capillary electrophoresis, effective optical signal quality improvement is obtained when high frequency (>100 Hz) external pulse fields modulate analyte velocities with synchronous lock-in detection. However, the pulse frequency is constrained under a critical value corresponding to the time required for the bulk viscous flow, which arises due to viscous momentum diffusion from the electro-osmotic slip in the Debye layer, to reach steady-state. By solving the momentum diffusion equation for transient bulk flow in the micro-channel, we show that this set-in time to steady-state and hence, the upper limit for the pulse frequency is dependent on the characteristic diffusion length scale and therefore the channel geometry; for cylindrical capillaries, the set-in time is approximately one half of that for rectangular slot channels. From our estimation of the set-in time and hence the upper frequency modulation limit, we propose that the half width of planar channels does not exceed 100 microm and that the radii of cylindrical channels be limited to 140 microm such that there is a finite working bandwidth range above 100 Hz and below the upper limit in order for flicker noise to be effectively suppressed.

Quantitative analysis of immobilized penicillinase using enzyme-modified AlGaN/GaN field-effect transistors.

PubMed

Müntze, Gesche Mareike; Baur, Barbara; Schäfer, Wladimir; Sasse, Alexander; Howgate, John; Röth, Kai; Eickhoff, Martin

2015-02-15

Penicillinase-modified AlGaN/GaN field-effect transistors (PenFETs) are utilized to systematically investigate the covalently immobilized enzyme penicillinase under different experimental conditions. We demonstrate quantitative evaluation of covalently immobilized penicillinase layers on pH-sensitive field-effect transistors (FETs) using an analytical kinetic PenFET model. This kinetic model is explicitly suited for devices with thin enzyme layers that are not diffusion-limited, as it is the case for the PenFETs discussed here. By means of the kinetic model it was possible to extract the Michaelis constant of covalently immobilized penicillinase as well as relative transport coefficients of the different species associated with the enzymatic reaction which, exempli gratia, give information about the permeability of the enzymatic layer. Based on this analysis we quantify the reproducibility and the stability of the analyzed PenFETs over the course of 33 days as well as the influence of pH and buffer concentration on the properties of the enzymatic layer. Thereby the stability measurements reveal a Michalis constant KM of (67 ± 13)μM while the chronological development of the relative transport coefficients suggests a detachment of physisorbed penicillinase during the first two weeks since production. Our results show that AlGaN/GaN PenFETs prepared by covalent immobilization of a penicillinase enzyme layer present a powerful tool for quantitative analysis of enzyme functionality. Copyright © 2014 Elsevier B.V. All rights reserved.

Inhibitory effect of protopine on K(ATP) channel subunits expressed in HEK-293 cells.

PubMed

Jiang, Bo; Cao, Kun; Wang, Rui

2004-12-15

Protopine is an isoquinoline alkaloid purified from Corydalis tubers and other families of medicinal plants. The purpose of the present study was to investigate the effects of protopine on K(ATP) channels and big conductance (BKCa) channels. Protopine concentration-dependently inhibited K(ATP) channel currents in human embryonic kidney cells (HEK-293) which were cotransfected with Kir6.1 and sulfonylurea receptor 1 (SUR1) subunits, but not that with Kir6.1 cDNA transfection alone. At 25 muM, protopine reversibly decreased Kir6.1/SUR1 currents densities from -17.4+/-3 to -13.2+/-2.4 pA/pF at -60 mV (n=5, P<0.05). The heterologously expressed mSlo-encoded BK(Ca) channel currents in HEK-293 cells were not affected by protopine (25 muM), although iberiotoxin (100 nM) significantly inhibited the expressed BK(Ca) currents (n=5, P<0.05). In summary, protopine selectively inhibited K(ATP) channels by targeting on SUR1 subunit. This discovery may help design specific agents to selectively modulate the function of Kir6.1/SUR1 channel complex and facilitate the understanding of the structure-function relationship of specific subtype of K(ATP) channels.

Nature of size effects in compact models of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torkhov, N. A., E-mail: trkf@mail.ru; Scientific-Research Institute of Semiconductor Devices, Tomsk 634050; Tomsk State University of Control Systems and Radioelectronics, Tomsk 634050

Investigations have shown that in the local approximation (for sizes L < 100 μm), AlGaN/GaN high electron mobility transistor (HEMT) structures satisfy to all properties of chaotic systems and can be described in the language of fractal geometry of fractional dimensions. For such objects, values of their electrophysical characteristics depend on the linear sizes of the examined regions, which explain the presence of the so-called size effects—dependences of the electrophysical and instrumental characteristics on the linear sizes of the active elements of semiconductor devices. In the present work, a relationship has been established for the linear model parameters of themore » equivalent circuit elements of internal transistors with fractal geometry of the heteroepitaxial structure manifested through a dependence of its relative electrophysical characteristics on the linear sizes of the examined surface areas. For the HEMTs, this implies dependences of their relative static (A/mm, mA/V/mm, Ω/mm, etc.) and microwave characteristics (W/mm) on the width d of the sink-source channel and on the number of sections n that leads to a nonlinear dependence of the retrieved parameter values of equivalent circuit elements of linear internal transistor models on n and d. Thus, it has been demonstrated that the size effects in semiconductors determined by the fractal geometry must be taken into account when investigating the properties of semiconductor objects on the levels less than the local approximation limit and designing and manufacturing field effect transistors. In general, the suggested approach allows a complex of problems to be solved on designing, optimizing, and retrieving the parameters of equivalent circuits of linear and nonlinear models of not only field effect transistors but also any arbitrary semiconductor devices with nonlinear instrumental characteristics.« less

Effects of the magnetic field gradient on the wall power deposition of Hall thrusters

NASA Astrophysics Data System (ADS)

Ding, Yongjie; Li, Peng; Zhang, Xu; Wei, Liqiu; Sun, Hezhi; Peng, Wuji; Yu, Daren

2017-04-01

The effect of the magnetic field gradient in the discharge channel of a Hall thruster on the ionization of the neutral gas and power deposition on the wall is studied through adopting the 2D-3V particle-in-cell (PIC) and Monte Carlo collisions (MCC) model. The research shows that by gradually increasing the magnetic field gradient while keeping the maximum magnetic intensity at the channel exit and the anode position unchanged, the ionization region moves towards the channel exit and then a second ionization region appears near the anode region. Meanwhile, power deposition on the walls decreases initially and then increases. To avoid power deposition on the walls produced by electrons and ions which are ionized in the second ionization region, the anode position is moved towards the channel exit as the magnetic field gradient is increased; when the anode position remains at the zero magnetic field position, power deposition on the walls decreases, which can effectively reduce the temperature and thermal load of the discharge channel.

Mars Pathfinder Landing Site Workshop 2: Characteristics of the Ares Vallis Region and Field Trips in the Channeled Scabland, Washington

NASA Technical Reports Server (NTRS)

Golombek, M. P. (Editor); Edgett, K. S. (Editor); Rice, J. W., Jr. (Editor)

1995-01-01

This volume, the first of two comprising the technical report for this workshop, contains papers that have been accepted for presentation at the Mars Pathfinder Landing Site Workshop 2: Characteristics of the Ares Vallis Region, September 24-30, 1995, in Spokane, Washington. The Mars Pathfinder Project received a new start in October 1993 as one of the next missions in NASA's long-term Mars exploration program. The mission involves landing a single vehicle on the surface of Mars in 1997. The project is one of the first Discovery-class missions and is required to be a quick, low-cost mission and achieve a set of significant but focused engineering, science, and technology objectives. The primary objective is to demonstrate a low-cost cruise, entry, descent, and landing system required to place a payload on the martian surface in a safe, operational configuration. Additional objectives include the deployment and operation of various science instruments and a microrover. Pathfinder paves the way for a cost-effective implementation of future Mars lander missions. Also included in this volume is the field trip guide to the Channeled Scabland and Missoula Lake Break-out. On July 4, 1997, Mars Pathfinder is scheduled to land near 19.5 deg N, 32.8 deg W, in a portion of Ares Vallis. The landing ellipse covers a huge (100 x 200 km) area that appears to include both depositional and erosional landforms created by one or more giant, catastrophic floods. One of the best known terrestrial analogs to martian outflow channels (such as Ares Vallis) is the region known as the Channeled Scabland. The field trip guide describes some of the geomorphological features of the Channeled Scabland and adjacent Lake Missoula break-out area near Lake Pend Oreille, Idaho.

N-(2-methoxyphenyl) benzenesulfonamide, a novel regulator of neuronal G protein-gated inward rectifier K+ channels.

PubMed

Walsh, Kenneth B; Gay, Elaine A; Blough, Bruce E; Geurkink, David W

2017-11-15

G protein-gated inward rectifier K + (GIRK) channels are members of the super-family of proteins known as inward rectifier K + (Kir) channels and are expressed throughout the peripheral and central nervous systems. Neuronal GIRK channels are the downstream targets of a number of neuromodulators including opioids, somatostatin, dopamine and cannabinoids. Previous studies have demonstrated that the ATP-sensitive K + channel, another member of the Kir channel family, is regulated by sulfonamide drugs. Therefore, to determine if sulfonamides also modulate GIRK channels, we screened a library of arylsulfonamide compounds using a GIRK channel fluorescent assay that utilized pituitary AtT20 cells expressing GIRK channels along with the somatostatin type-2 and -5 receptors. Enhancement of the GIRK channel fluorescent signal by one compound, N-(2-methoxyphenyl) benzenesulfonamide (MPBS), was dependent on the activation of the channel by somatostatin. In whole-cell patch clamp experiments, application of MPBS both shifted the somatostatin concentration-response curve (EC 50 = 3.5nM [control] vs.1.0nM [MPBS]) for GIRK channel activation and increased the maximum GIRK current measured with 100nM somatostatin. However, GIRK channel activation was not observed when MPBS was applied to the cells in the absence of somatostatin. While the MPBS structural analog 4-fluoro-N-(2-methoxyphenyl) benzenesulfonamide also augmented the somatostatin-induced GIRK fluorescent signal, no increase in the signal was observed with the sulfonamides tolbutamide, sulfapyridine and celecoxib. In conclusion, MPBS represents a novel prototypic GPCR-dependent regulator of neuronal GIRK channels. Copyright © 2017 Elsevier B.V. All rights reserved.

Theory for nanoparticle retention time in the helical channel of quadrupole magnetic field-flow fractionation

NASA Astrophysics Data System (ADS)

Williams, P. Stephen; Carpino, Francesca; Zborowski, Maciej

2009-05-01

Quadrupole magnetic field-flow fractionation (QMgFFF) is a separation and characterization technique for magnetic nanoparticles such as those used for cell labeling and for targeted drug therapy. A helical separation channel is used to efficiently exploit the quadrupole magnetic field. The fluid and sample components therefore have angular and longitudinal components to their motion in the thin annular space occupied by the helical channel. The retention ratio is defined as the ratio of the times for non-retained and a retained material to pass through the channel. Equations are derived for the respective angular and longitudinal components to retention ratio.

Determination of the functioning parameters in asymmetrical flow field-flow fractionation with an exponential channel.

PubMed

Déjardin, P

2013-08-30

The flow conditions in normal mode asymmetric flow field-flow fractionation are determined to approach the high retention limit with the requirement d≪l≪w, where d is the particle diameter, l the characteristic length of the sample exponential distribution and w the channel height. The optimal entrance velocity is determined from the solute characteristics, the channel geometry (exponential to rectangular) and the membrane properties, according to a model providing the velocity fields all over the cell length. In addition, a method is proposed for in situ determination of the channel height. Copyright © 2013 Elsevier B.V. All rights reserved.

Brownian Dynamics simulations of model colloids in channel geometries and external fields

NASA Astrophysics Data System (ADS)

Siems, Ullrich; Nielaba, Peter

2018-04-01

We review the results of Brownian Dynamics simulations of colloidal particles in external fields confined in channels. Super-paramagnetic Brownian particles are well suited two- dimensional model systems for a variety of problems on different length scales, ranging from pedestrian walking through a bottleneck to ions passing ion-channels in living cells. In such systems confinement into channels can have a great influence on the diffusion and transport properties. Especially we will discuss the crossover from single file diffusion in a narrow channel to the diffusion in the extended two-dimensional system. Therefore a new algorithm for computing the mean square displacement (MSD) on logarithmic time scales is presented. In a different study interacting colloidal particles were dragged over a washboard potential and are additionally confined in a two-dimensional micro-channel. In this system kink and anti-kink solitons determine the depinning process of the particles from the periodic potential.

[Effects of diurnal warming on soil N2O emission in soybean field].

PubMed

Hu, Zheng-Hua; Zhou, Ying-Ping; Cui, Hai-Ling; Chen, Shu-Tao; Xiao, Qi-Tao; Liu, Yan

2013-08-01

To investigate the impact of experimental warming on N2O emission from soil of soybean field, outdoor experiments with simulating diurnal warming were conducted, and static dark chamber-gas chromatograph method was used to measure N2O emission fluxes. Results indicated that: the diurnal warming did not change the seasonal pattern of N2O emissions from soil. In the whole growing season, comparing to the control treatment (CK), the warming treatment (T) significantly enhanced the N2O flux and the cumulative amount of N2O by 17.31% (P = 0.019), and 20.27% (P = 0.005), respectively. The significant correlations were found between soil N2O emission and soil temperature, moisture. The temperature sensitivity values of soil N2O emission under CK and T treatments were 3.75 and 4.10, respectively. In whole growing stage, T treatment significantly increased the crop aboveground and total biomass, the nitrate reductase activity, and total nitrogen in leaves, while significantly decreased NO3(-) -N content in leaves. T treatment significantly increased soil NO3(-) -N content, but had no significant effect on soil organic carbon and total nitrogen contents. The results of this study suggested that diurnal warming enhanced N2O emission from soil in soybean field.

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

NASA Astrophysics Data System (ADS)

Naderi, Ali

2017-12-01

In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

Orbital two-channel Kondo effect in epitaxial ferromagnetic L1 0-MnAl films

DOE PAGES

Zhu, L. J.; Nie, S. H.; Xiong, P.; ...

2016-02-24

The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly identified to exhibit all three transport regimes characteristic of the two-channel Kondo effect in the same sample, leaving the interpretation of the experimental results a subject of debate. Here we present a transport study suggestive of a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L1 0-MnAl films, as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarithmic-more » to square-root temperature dependence and deviation from it in three distinct temperature regimes. Lastly, our results also provide an experimental indication of the presence of two-channel Kondo physics in a ferromagnet, pointing to considerable robustness of the orbital two-channel Kondo effect even in the presence of spin polarization of the conduction electrons.« less

Orbital two-channel Kondo effect in epitaxial ferromagnetic L1 0-MnAl films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, L. J.; Nie, S. H.; Xiong, P.

The orbital two-channel Kondo effect displaying exotic non-Fermi liquid behaviour arises in the intricate scenario of two conduction electrons compensating a pseudo-spin-1/2 impurity of two-level system. Despite extensive efforts for several decades, no material system has been clearly identified to exhibit all three transport regimes characteristic of the two-channel Kondo effect in the same sample, leaving the interpretation of the experimental results a subject of debate. Here we present a transport study suggestive of a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L1 0-MnAl films, as evidenced by a magnetic field-independent resistivity upturn with a clear transition from logarithmic-more » to square-root temperature dependence and deviation from it in three distinct temperature regimes. Lastly, our results also provide an experimental indication of the presence of two-channel Kondo physics in a ferromagnet, pointing to considerable robustness of the orbital two-channel Kondo effect even in the presence of spin polarization of the conduction electrons.« less

Interactions of the H5 pore region and hydroxylamine with N-type inactivation in the Shaker K+ channel.

PubMed Central

Yool, A J; Schwarz, T L

1995-01-01

Mutations at sites in the H5 region of the Shaker B K+ channel were used to analyze the influence of the pore on N-type inactivation. Single-channel and two-electrode voltage clamp analyses showed that mutations at residues T441 and T442, which are thought to lie at the internal mouth of the pore, produced opposite effects on inactivation: the inactivated state is stabilized by T441S and destabilized by T442S. In addition, an ammonium derivative, hydroxylamine (OH-(NH3)+), appears to bind in the pore region of T441S and further decreases the rate of recovery from N-type inactivation. This effect relies on the presence of the amino-terminal. The effect of hydroxylamine on the T441S mutation of this K+ channel shows several properties analogous to those of local anesthetics on the Na+ channel. These results can be interpreted to suggest that part of the H5 region contributes to the receptor for the inactivation particle and that a hydroxylamine ion trapped near that site can stabilize their interaction. Images FIGURE 8 PMID:7696498

Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyu Sang

2017-09-01

In this work, the impact of trap states at the p-(Al)GaN/AlGaN interface has been investigated for the normally-off mode p-(Al)GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) by means of frequency dependent conductance. From the current-voltage (I-V) measurement, it was found that the p-AlGaN gate integrated device has higher drain current and lower gate leakage current compared to the p-GaN gate integrated device. We obtained the interface trap density and the characteristic time constant for the p-type gate integrated HFETs under the forward gate voltage of up to 6 V. As a result, the interface trap density (characteristic time constant) of the p-GaN gate device was lower (longer) than that of the p-AlGaN. Furthermore, it was analyzed that the trap state energy level of the p-GaN gate device was located at the shallow level relative to the p-AlGaN gate device, which accounts for different gate leakage current of each devices.

Robust ion current oscillations under a steady electric field: An ion channel analog.

PubMed

Yan, Yu; Wang, Yunshan; Senapati, Satyajyoti; Schiffbauer, Jarrod; Yossifon, Gilad; Chang, Hsueh-Chia

2016-08-01

We demonstrate a nonlinear, nonequilibrium field-driven ion flux phenomenon, which unlike Teorell's nonlinear multiple field theory, requires only the application of one field: robust autonomous current-mass flux oscillations across a porous monolith coupled to a capillary with a long air bubble, which mimics a hydrophobic protein in an ion channel. The oscillations are driven by the hysteretic wetting dynamics of the meniscus when electro-osmotic flow and pressure driven backflow, due to bubble expansion, compete to approach zero mass flux within the monolith. Delayed rupture of the film around the advancing bubble cuts off the electric field and switches the monolith mass flow from the former to the latter. The meniscus then recedes and repairs the rupture to sustain an oscillation for a range of applied fields. This generic mechanism shares many analogs with current oscillations in cell membrane ion channel. At sufficiently high voltage, the system undergoes a state transition characterized by appearance of the ubiquitous 1/f power spectrum.

Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain

NASA Astrophysics Data System (ADS)

Han, Genquan; Wang, Yibo; Liu, Yan; Wang, Hongjuan; Liu, Mingshan; Zhang, Chunfu; Zhang, Jincheng; Cheng, Buwen; Hao, Yue

2015-05-01

In this work, relaxed GeSn p-channel tunneling field-effect transistors (pTFETs) with various Sn compositions are fabricated on Si. Enhancement of on-state current ION with the increase of Sn composition is observed in transistors, due to the reduction of direct bandgap EG. Ge0.93Sn0.07 and Ge0.95Sn0.05 pTFETs achieve 110% and 75% enhancement in ION, respectively, compared to Ge0.97Sn0.03 devices, at VGS - VTH = VDS = - 1.0 V. For the first time, ION enhancement in GeSn pTFET utilizing uniaxial tensile strain is reported. By applying 0.14% uniaxial tensile strain along [110] channel direction, Ge0.95Sn0.05 pTFETs achieve 12% ION improvement, over unstrained control devices at VGS - VTH = VDS = - 1.0 V. Theoretical study demonstrates that uniaxial tensile strain leads to the reduction of direct EG and affects the reduced tunneling mass, which bring the GBTBT rising, benefiting the tunneling current enhancement in GeSn TFETs.

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

2014-12-01

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

Transient electroosmotic flow induced by AC electric field in micro-channel with patchwise surface heterogeneities.

PubMed

Luo, Win-Jet

2006-03-15

This paper investigates two-dimensional, time-dependent electroosmotic flow driven by an AC electric field via patchwise surface heterogeneities distributed along the micro-channel walls. The time-dependent flow fields through the micro-channel are simulated for various patchwise heterogeneous surface patterns using the backwards-Euler time stepping numerical method. Different heterogeneous surface patterns are found to create significantly different electrokinetic transport phenomena. The transient behavior characteristics of the generated electroosmotic flow are then discussed in terms of the influence of the patchwise surface heterogeneities, the direction of the applied AC electric field, and the velocity of the bulk flow. It is shown that the presence of oppositely charged surface heterogeneities on the micro-channel walls results in the formation of localized flow circulations within the bulk flow. These circulation regions grow and decay periodically in phase with the applied periodic AC electric field intensity. The location and rotational direction of the induced circulations are determined by the directions of the bulk flow velocity and the applied electric field.

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

NASA Astrophysics Data System (ADS)

Ni, Yi-Qiang; He, Zhi-Yuan; Yao, Yao; Yang, Fan; Zhou, De-Qiu; Zhou, Gui-Lin; Shen, Zhen; Zhong, Jian; Zheng, Yue; Zhang, Bai-Jun; Liu, Yang

2015-05-01

We report a novel structure of AlGaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair-doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio (˜ 109). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 51177175 and 61274039), the National Basic Research Project of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

Isospin-symmetry-breaking effects in A∼70 nuclei within beyond-mean-field approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrovici, A.; Andrei, O.

2015-02-24

Particular isospin-symmetry-breaking probes including Coulomb energy differences (CED), mirror energy differences (MED), and triplet energy differences (TED) manifest anomalies in the A∼70 isovector triplets of nuclei. The structure of proton-rich nuclei in the A∼70 mass region suggests shape coexistence and competition between pairing correlations in different channels. Recent results concerning the interplay between isospin-mixing and shape-coexistence effects on exotic phenomena in A∼70 nuclei obtained within the beyond-mean-field complex Excited Vampir variational model with symmetry projection before variation using a realistic effective interaction in a relatively large model space are presented. Excited Vampir predictions concerning the Gamow-Teller β decay to themore » odd-odd N=Z {sup 66}As and {sup 70}Br nuclei correlated with the pair structure analysis in the T=1 and T=0 channel of the involved wave functions are discussed.« less

A new safety channel based on ¹⁷N detection in research reactors.

PubMed

Seyfi, Somayye; Gharib, Morteza

2015-10-01

Tehran research reactor (TRR) is a representative of pool type research reactors using light water, as coolant and moderator. This reactor is chosen as a prototype to demonstrate and prove the feasibility of (17)N detection as a new redundant channel for reactor power measurement. In TRR, similar to other pool type reactors, neutron detectors are immersed in the pool around the core as the main power measuring devices. In the present article, a different approach, using out of water neutron detector, is employed to measure reactor power. This new method is based on (17)O (n,p) (17)N reaction taking place inside the core and subsequent measurement of delayed neutrons emitted due to (17)N disintegration. Count and measurement of neutrons around outlet water pipe provides a reliable redundant safety channel to measure reactor power. Results compared with other established channels indicate a good agreement and shows a linear interdependency with true thermal power. Safety of reactor operation is improved with installation & use of this new power measuring channel. The new approach may equally serve well as a redundant channel in all other types of reactors having coolant comprised of oxygen in its molecular constituents. Contrary to existing channels, this one is totally out of water and thus is an advantage over current instrumentations. It is proposed to employ the same idea on other reactors (nuclear power plants too) to improve safety criteria. Copyright © 2015 Elsevier Ltd. All rights reserved.

Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers

NASA Technical Reports Server (NTRS)

Evans, Gary A.; Goldstein, Bernard; Butler, Jerome K.

1987-01-01

Compositional changes in the n-clad layer within the channel region of channel substrate planar (CSP) type semiconductor lasers have been observed. As a consequece, a large optical cavity (LOC) or an enhanced substrate loss (ESL) version of the CSP geometry may result, both of which may have significantly different characteristics from those of a conventional CSP laser. The CSP-LOC generally has a larger near-field spot size, while the ESL-CSP is characterized by an off-axis, asymmetric far-field pattern.

Reduced voltage sensitivity in a K+-channel voltage sensor by electric field remodeling

PubMed Central

González-Pérez, Vivian; Stack, Katherine; Boric, Katica; Naranjo, David

2010-01-01

Propagation of the nerve impulse relies on the extreme voltage sensitivity of Na+ and K+ channels. The transmembrane movement of four arginine residues, located at the fourth transmembrane segment (S4), in each of their four voltage-sensing domains is mostly responsible for the translocation of 12 to 13 eo across the transmembrane electric field. Inserting additional positively charged residues between the voltage-sensing arginines in S4 would, in principle, increase voltage sensitivity. Here we show that either positively or negatively charged residues added between the two most external sensing arginines of S4 decreased voltage sensitivity of a Shaker voltage-gated K+-channel by up to ≈50%. The replacement of Val363 with a charged residue displaced inwardly the external boundaries of the electric field by at least 6 Å, leaving the most external arginine of S4 constitutively exposed to the extracellular space and permanently excluded from the electric field. Both the physical trajectory of S4 and its electromechanical coupling to open the pore gate seemed unchanged. We propose that the separation between the first two sensing charges at resting is comparable to the thickness of the low dielectric transmembrane barrier they must cross. Thus, at most a single sensing arginine side chain could be found within the field. The conserved hydrophobic nature of the residues located between the voltage-sensing arginines in S4 may shape the electric field geometry for optimal voltage sensitivity in voltage-gated ion channels. PMID:20194763

On a quantum particle in laser channels

NASA Astrophysics Data System (ADS)

Dik, A. V.; Frolov, E. N.; Dabagov, S. B.

2018-02-01

In this paper the effective potential describing interaction of a scalar quantum particle with arbitrary nonuniform laser field is derived for a wide spectrum of the particle energies. The presented method allows to take into account all the features of the effective potential for a scalar particle. The derived expression for effective potential for quantum particle has the same form as the one presented earlier for a classical particle. A special case for channeling of a quantum particle as well as accompanying channeling radiation in a field formed by two crossed plane laser waves is considered. It is shown that relativistic particles moving near the laser channel bottom should be examined as quantum ones at both arbitrarily large longitudinal energies and laser fields of accessible intensities.

High-quality GaN epitaxially grown on Si substrate with serpentine channels

NASA Astrophysics Data System (ADS)

Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

2018-06-01

A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

The electric field change caused by a ground flash with multiple channels

NASA Technical Reports Server (NTRS)

Nakano, Minoru; Takagi, Nobuyuki; Arima, Izumi; Kawasaki, Zen-Ichiro; Takeuti, Tosio

1991-01-01

The electric field and the magnetic flux changes caused by a ground flash with multiple channels are measured near the electric power transmission lines during winter thunderstorms. Triggered lightning strokes and the following associated strokes to the transmission line towers produce characteristic waveforms of the field changes. A few examples of the waveforms and a brief discussion are given.

Investigation of Short Channel Effects on Device Performance for 60nm NMOS Transistor

NASA Astrophysics Data System (ADS)

Chinnappan, U.; Sanudin, R.

2017-08-01

In the aggressively scaled complementary metal oxide semiconductor (CMOS) devices, shallower p-n junctions and low sheet resistances are essential for short-channel effect (SCE) control and high device performance. The SCE are attributed to two physical phenomena that are the limitation imposed on electron drift characteristics in channel and the modification of the threshold voltage (Vth) due to the shortening channel length. The decrement of Vth with decrement in gate length is a well-known attribute in SCE known as “threshold voltage roll-off’. In this research, the Technology Computer Aided Design (TCAD) was used to model the SCE phenomenon effect on 60nm n-type metal oxide semiconductor (NMOS) transistor. There are three parameters being investigated, which are the oxide thickness (Tox), gate length (L), acceptor concentration (Na). The simulation data were used to visualise the effect of SCE on the 60nm NMOS transistor. Simulation data suggest that all three parameters have significant effect on Vth, and hence on the transistor performance. It is concluded that there is a trade-off among these three parameters to obtain an optimized transistor performance.

Laser pulse propagation in inhomogeneous magnetoplasma channels and wakefield acceleration

NASA Astrophysics Data System (ADS)

Sharma, B. S.; Jain, Archana; Jaiman, N. K.; Gupta, D. N.; Jang, D. G.; Suk, H.; Kulagin, V. V.

2014-02-01

Wakefield excitation in a preformed inhomogeneous parabolic plasma channel by an intense relativistic (≃1019 W/cm2) circularly polarized Gaussian laser pulse is investigated analytically and numerically in the presence of an external longitudinal magnetic field. A three dimensional envelope equation for the evolution of the laser pulse is derived, which includes the effect of the nonparaxial and applied external magnetic field. A relation for the channel radius with the laser spot size is derived and examines numerically to see the external magnetic field effect. It is observed that the channel radius depends on the applied external magnetic field. An analytical expression for the wakefield is derived and validated with the help of a two dimensional particle in cell (2D PIC) simulation code. It is shown that the electromagnetic nature of the wakes in an inhomogeneous plasma channel makes their excitation nonlocal, which results in change of fields with time and external magnetic field due to phase mixing of the plasma oscillations with spatially varying frequencies. The magnetic field effect on perturbation of the plasma density and decreasing length is also analyzed numerically. In addition, it has been shown that the electron energy gain in the inhomogeneous parabolic magnetoplasma channel can be increased significantly compared with the homogeneous plasma channel.

Scanning gate study of organic thin-film field-effect transistor

NASA Astrophysics Data System (ADS)

Aoki, N.; Sudou, K.; Matsusaki, K.; Okamoto, K.; Ochiai, Y.

2008-03-01

Scanning gate microscopy (SGM) has been applied for a study of organic thin-film field effect transistor (OFET). In contrast to one-dimensional nano-material such a carbon nanonube or nano-structure such a quantum point contact, visualization a transport characteristic of OFET channel is basically rather difficult since the channel width is much larger than the size of the SGM tip. Nevertheless, Schottky barriers are successfully visualized at the boundary between the metal electrodes and the OFET channel at ambient atmosphere.

Targeting Chronic and Neuropathic Pain: The N-type Calcium Channel Comes of Age

PubMed Central

Snutch, Terrance P.

2005-01-01

Summary: The rapid entry of calcium into cells through activation of voltage-gated calcium channels directly affects membrane potential and contributes to electrical excitability, repetitive firing patterns, excitation-contraction coupling, and gene expression. At presynaptic nerve terminals, calcium entry is the initial trigger mediating the release of neurotransmitters via the calcium-dependent fusion of synaptic vesicles and involves interactions with the soluble N-ethylmaleimide-sensitive factor attachment protein receptor complex of synaptic release proteins. Physiological factors or drugs that affect either presynaptic calcium channel activity or the efficacy of calcium-dependent vesicle fusion have dramatic consequences on synaptic transmission, including that mediating pain signaling. The N-type calcium channel exhibits a number of characteristics that make it an attractive target for therapeutic intervention concerning chronic and neuropathic pain conditions. Within the past year, both U.S. and European regulatory agencies have approved the use of the cationic peptide Prialt for the treatment of intractable pain. Prialt is the first N-type calcium channel blocker approved for clinical use and represents the first new proven mechanism of action for chronic pain intervention in many years. The present review discusses the rationale behind targeting the N-type calcium channel, some of the limitations confronting the widespread clinical application of Prialt, and outlines possible strategies to improve upon Prialt's relatively narrow therapeutic window. PMID:16489373

Minimizing Environmental Magnetic Field Sources for nEDM

NASA Astrophysics Data System (ADS)

Brinson, Alex; Filippone, Bradley; Slutsky, Simon; Osthelder, Charles

2017-09-01

Measurement of the neutron's Electric Dipole Moment (nEDM) could potentially explain the Baryon Asymmetry Problem, and would suggest plausible extensions to the Standard Model. We will attempt to detect the nEDM by measuring the electric-field-dependent neutron precession frequency, which is highly sensitive to magnetic field gradients. In order to produce fields with sufficiently low gradients for our experiment, we eliminate environmental effects by offsetting the ambient field with a Field Compensation System (FCS), then magnetically shielding the reduced field with a Mu-Metal cylinder. We discovered that the strongest environmental effect in our lab came from iron rebar embedded in the floor beneath the proposed experiment location. The large extent and strength of the floor's magnetization made the effect too large to offset with the FCS, forcing us to relocate our apparatus. The floor's magnetic field was mapped with a Hall probe in order to determine the most viable experiment locations. A 3-axis Fluxgate magnetometer was then used to determine the floor field's drop-off and shape at these locations, and a final apparatus position was determined which minimized the floor's effect such that it could be effectively offset and shielded by our experiment. Caltech SFP Office.

Computational investigation of drug-resistant mutant of M2 proton channel (S31N) against rimantadine.

PubMed

Karthick, V; Ramanathan, K

2014-11-01

M2 proton channel is the target for treating the patients who ere suffering from influenza A infection, which facilitates the spread of virions. Amantadine and rimantadine are adamantadine-based drugs, which target M2 proton channel and inhibit the viral replication. Preferably, rimantadine drug is used more than amantadine because of its fewer side effects. However, S31N mutation in the M2 proton channel was highly resistant to the rimantadine drug. Therefore, in the present study, we focused to understand the drug-resistance mechanism of S31N mutation with the aid of molecular docking and dynamics approach. The docking analysis undoubtedly indicates that affinity for rimantadine with mutant-type M2 proton channel is significantly lesser than the native-type M2 proton channel. In addition, RMSD, RMSF, and principal component analysis suggested that the mutation shows increased flexibility. Furthermore, the intermolecular hydrogen bonds analysis showed that there is a complete loss of hydrogen bonds in the mutant complex. On the whole, we conclude that the intermolecular contact was maintained by D-44, a key residue for stable binding of rimantadine. These findings are certainly helpful for better understanding of drug-resistance mechanism and also helpful for designing new drugs for treating influenza infection against drug-resistance target.

Modelling shoal margin collapses and their morphodynamic effect on channels and shoals in a sandy estuary

NASA Astrophysics Data System (ADS)

van Dijk, W. M.; Mastbergen, D. R.; Van der Werf, J. J.; Leuven, J.; Kleinhans, M. G.

2017-12-01

Channel bank failure and collapses of shoal margins due to flow slides have been recorded in Dutch estuaries for the past 200 years. The effects of these collapses on the morphodynamics of estuaries are unknown, but could potentially increase the dynamics of channel-shoal interactions by causing perturbations of up to a million cubic meters per event, which could impact habitats and navigability. The processes of shoal margin collapses are currently not included in numerical morphodynamic models. The objectives of this study are to investigate where shoal margins collapses typically occur, what their dimensions are, and to model how shoal margin collapses affect the morphodynamics at the channel-shoal scale. We identified 300 shoal margin collapses from bathymetry data of the Western Scheldt estuary for the period 1959-2015, and found that the shape of a shoal margin collapse is well represented by 1/3 of an ellipsoid, and that its volume has a log-normal distribution with an average of 100,000 m3. We implemented a parameterization for shoal margin collapses and tested their effects on morphodynamics in a Delft3D numerical model schematization of the Western Scheldt estuary. Three sets of scenarios were analyzed for near-field morphodynamics and far-field effects on flow pattern and channel-bar morphology: 1) an observed single shoal margin collapse of 2014, 2) collapses on various locations that are susceptible to collapses, and 3) our novel stochastic model producing collapses over a time span of a decade. Results show that single shoal margin collapses only affect the local dynamics in longitudinal direction and dampen out within a year when the collapse is small. When larger disturbances reach the seaward or landward sill at tidal channel junctions over a longer time span, the bed elevation at the sill increases on average and decrease the hydraulic geometry of the channel junctions. The extent of far-field effects is sensitive to the grain-size of the deposit

Performance Evaluation of LDPC Coding and Iterative Decoding System in BPM R/W Channel Affected by Head Field Gradient, Media SFD and Demagnetization Field

NASA Astrophysics Data System (ADS)

Nakamura, Yasuaki; Okamoto, Yoshihiro; Osawa, Hisashi; Aoi, Hajime; Muraoka, Hiroaki

We evaluate the performance of the write-margin for the low-density parity-check (LDPC) coding and iterative decoding system in the bit-patterned media (BPM) R/W channel affected by the write-head field gradient, the media switching field distribution (SFD), the demagnetization field from adjacent islands and the island position deviation. It is clarified that the LDPC coding and iterative decoding system in R/W channel using BPM at 3 Tbit/inch2 has a write-margin of about 20%.

RBS/Channeling Studies of Swift Heavy Ion Irradiated GaN Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sathish, N.; Dhamodaran, S.; Pathak, A. P.

2009-03-10

Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates were irradiated with 150 MeV Ag ions at a fluence of 5x10{sup 12} ions/cm{sup 2}. Samples used in this study are 2 {mu}m thick GaN layers, with and without a thin AlN cap-layer. Energy dependent RBS/Channeling measurements have been carried out on both irradiated and unirradiated samples for defects characterization. Observed results are compared and correlated with previous HRXRD, AFM and optical studies. The {chi}{sub min} values for unirradiated samples show very high value and the calculated defect densities are of the order of 10{sup 10} cm{sup -2} as expectedmore » in these samples. Effects of irradiation on these samples are different as initial samples had different defect densities. Epitaxial reconstruction of GaN buffer layer has been attributed to the observed changes, which are generally grown to reduce the strain between GaN and Sapphire.« less

Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Zhu, Huichao; Ao, Jin-Ping

2016-03-01

An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10-9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs.

An underlap field-effect transistor for electrical detection of influenza

NASA Astrophysics Data System (ADS)

Lee, Kwang-Won; Choi, Sung-Jin; Ahn, Jae-Hyuk; Moon, Dong-Il; Park, Tae Jung; Lee, Sang Yup; Choi, Yang-Kyu

2010-01-01

An underlap channel-embedded field-effect transistor (FET) is proposed for label-free biomolecule detection. Specifically, silica binding protein fused with avian influenza (AI) surface antigen and avian influenza antibody (anti-AI) were designed as a receptor molecule and a target material, respectively. The drain current was significantly decreased after the binding of negatively charged anti-AI on the underlap channel. A set of control experiments supports that only the biomolecules on the underlap channel effectively modulate the drain current. With the merits of a simple fabrication process, complementary metal-oxide-semiconductor compatibility, and enhanced sensitivity, the underlap FET could be a promising candidate for a chip-based biosensor.

Lightning-channel conditioning

NASA Astrophysics Data System (ADS)

Sonnenfeld, R.; da Silva, C. L.; Eack, K.; Edens, H. E.; Harley, J.; McHarg, M.; Contreras Vidal, L.

2017-12-01

The concept of "conditioning" has several distinct applications in understanding lightning. It is commonly associated to the greater speed of dart-leaders vs. stepped leaders and the retrace of a cloud-to-ground channel by later return strokes. We will showadditional examples of conditioning: (A) High-speed videos of triggered flashes show "dark" periods of up to 50 ms between rebrightenings of an existing channel. (B) Interferometer (INTF) images of intra-cloud (IC) flashes demonstrate that electric-field "K-changes" correspond to rapid propagation of RF impulses along a previously formed channel separated by up to 20 ms with little RF emission on that channel. (C) Further, INTF images (like the one below) frequently show that the initial IC channel is more branched and "fuzzier'' than its later incarnations. Also, we contrast high-speed video, INTF observations, and spectroscopic measurements with possible physical mechanisms that can explain how channel conditioning guides and facilitates dart leader propagation. These mechanisms include: (1) a plasmochemical effect where electrons are stored in negative ions and released during the dart leader propagation via field-induced detachment; (2) small-amplitude residual currents that can maintain electrical conductivity; and (3) slow heat conduction cooling of plasma owing to channel expansion dynamics.

Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

DOEpatents

Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

2001-01-01

A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishi, K., E-mail: nishi@mosfet.t.u-tokyo.ac.jp; Takenaka, M.; Takagi, S.

2014-12-08

We demonstrate the operation of GaSb p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on (111)A surfaces with Al{sub 2}O{sub 3} gate dielectrics formed by atomic-layer deposition at 150 °C. The p-MOSFETs on (111)A surfaces exhibit higher drain current and lower subthreshold swing than those on (100) surfaces. We find that the interface-state density (D{sub it}) values at the Al{sub 2}O{sub 3}/GaSb MOS interfaces on the (111)A surfaces are lower than those on the (100) surfaces, which can lead to performance enhancement of the GaSb p-MOSFETs on (111)A surfaces. The mobility of the GaSb p-MOSFETs on (111)A surfaces is 80% higher than that onmore » (100) surfaces.« less

Field effect transistors based on phosphorene nanoribbon with selective edge-adsorption: A first-principles study

NASA Astrophysics Data System (ADS)

Hu, Mengli; Yang, Zhixiong; Zhou, Wenzhe; Li, Aolin; Pan, Jiangling; Ouyang, Fangping

2018-04-01

By using density functional theory (DFT) and nonequilibrium Green's function (NEGF), field effect transistor (FET) based on zigzag shaped phosphorene nanoribbons (ZPNR) are investigated. The FETs are constructed with bare-edged ZPNRs as electrodes and H, Cl or OH adsorbed ZPNRs as channel. It is found FETs with the three kinds of channel show similar transport properties. The FET is p-type with a maximum current on/off ratio of 104 and a minimum off-current of 1 nA. The working mode of FETs is dependent on the parity of channel length. It can be either enhancement mode or depletion mode and the off-state current shows an even-odd oscillation. The current oscillations are interpreted with density of states (DOS) analysis and methods of evolution operator and tight-binding Hamiltonian. Operating mechanism of the designed FETs is also presented with projected local density of states and band diagrams.

GIRK Channels Mediate the Nonphotic Effects of Exogenous Melatonin

PubMed Central

Hablitz, Lauren M.; Molzof, Hylton E.; Abrahamsson, Kathryn E.; Cooper, Joanna M.; Prosser, Rebecca A.

2015-01-01

molecular mechanisms linking melatonin-induced changes in neuronal activity to its therapeutic effects. Here, we used behavioral and electrophysiological techniques to address this scientific gap. Our results show that melatonin and ramelteon, a potent and clinically relevant melatonin receptor agonist, significantly affect the neurophysiological function of suprachiasmatic nucleus neurons through activation of G-protein-coupled inwardly rectifying potassium (GIRK) channels. Given the importance of GIRK channels for neuronal excitability (with >600 publications on these channels to date), our study should generate broad interest from neuroscientists in fields such as epilepsy, addiction, and cognition. PMID:26558769

Essential Role of NMDA Receptor Channel ε4 Subunit (GluN2D) in the Effects of Phencyclidine, but Not Methamphetamine

PubMed Central

Hagino, Yoko; Kasai, Shinya; Han, Wenhua; Yamamoto, Hideko; Nabeshima, Toshitaka; Mishina, Masayoshi; Ikeda, Kazutaka

2010-01-01

Phencyclidine (PCP), a noncompetitive N-methyl-D-aspartate (NMDA) receptor antagonist, increases locomotor activity in rodents and causes schizophrenia-like symptoms in humans. Although activation of the dopamine (DA) pathway is hypothesized to mediate these effects of PCP, the precise mechanisms by which PCP induces its effects remain to be elucidated. The present study investigated the effect of PCP on extracellular levels of DA (DAex) in the striatum and prefrontal cortex (PFC) using in vivo microdialysis in mice lacking the NMDA receptor channel ε1 or ε4 subunit (GluRε1 [GluN2A] or GluRε4 [GluN2D]) and locomotor activity. PCP significantly increased DAex in wildtype and GluRε1 knockout mice, but not in GluRε4 knockout mice, in the striatum and PFC. Acute and repeated administration of PCP did not increase locomotor activity in GluRε4 knockout mice. The present results suggest that PCP enhances dopaminergic transmission and increases locomotor activity by acting at GluRε4. PMID:21060893

No-tillage effects on grain yield, N use efficiency, and nutrient runoff losses in paddy fields.

PubMed

Liang, Xinqiang; Zhang, Huifang; He, Miaomiao; Yuan, Junli; Xu, Lixian; Tian, Guangming

2016-11-01

The effect of no-tillage (NT) on rice yield and nitrogen (N) behavior often varies considerably from individual studies. A meta-analysis was performed to assess quantitatively the effect of NT on rice yield and N uptake by rice, N use efficiency (NUE, i.e., fertilizer N recovery efficiency), and nutrient runoff losses. We obtained data from 74 rice-field experiments reported during the last three decades (1983-2013). Results showed the NT system brought a reduction of 3.8 % in the rice yield compared with conventional tillage (CT). Soil pH of 6.5-7.5 was favorable for the improvement of rice yield with the NT system, while a significant negative NT effect on rice yield was observed in sandy soils (p < 0.05). N rate, ranging from 120 to 180 kg N ha -1 , for at least 3 years was necessary for NT to enable rice yield comparable with that of CT. Furthermore, the observations indicated NT reduced N uptake and NUE of the rice by 5.4 and 16.9 %, while increased the N and P exports via runoff by 15.4 and 40.1 % compared with CT, respectively. Seedling cast transplantation, N rate within the range 120-180 kg N ha -1 , and employing NT for longer than 3 years should be encouraged to compromise between productivity and environmental effects of NT implementation in rice fields.

Identification of a Novel EF-Loop in the N-terminus of TRPM2 Channel Involved in Calcium Sensitivity

PubMed Central

Luo, Yuhuan; Yu, Xiafei; Ma, Cheng; Luo, Jianhong; Yang, Wei

2018-01-01

As an oxidative stress sensor, transient receptor potential melastatin 2 (TRPM2) channel is involved in many physiological and pathological processes including warmth sensing, ischemia injury, inflammatory diseases and diabetes. Intracellular calcium is critical for TRPM2 channel activation and the IQ-like motif in the N-terminus has been shown to be important by mediating calmodulin binding. Sequence analysis predicted two potential EF-loops in the N-terminus of TRPM2. Site-directed mutagenesis combining with functional assay showed that substitution with alanine of several residues, most of which are conserved in the typical EF-loop, including D267, D278, D288, and E298 dramatically reduced TRPM2 channel currents. By further changing the charges or side chain length of these conserved residues, our results indicate that the negative charge of D267 and the side chain length of D278 are critical for calcium-induced TRPM2 channel activation. G272I mutation also dramatically reduced the channel currents, suggesting that this site is critical for calcium-induced TRPM2 channel activation. Furthermore, D267A mutant dramatically reduced the currents induced by calcium alone compared with that by ADPR, indicating that D267 residue in D267–D278 motif is the most important site for calcium sensitivity of TRPM2. In addition, inside-out recordings showed that mutations at D267, G272, D278, and E298 had no effect on single-channel conductance. Taken together, our data indicate that D267–D278 motif in the N-terminus as a novel EF-loop is critical for calcium-induced TRPM2 channel activation.

Channel waveguides in glass via silver-sodium field-assisted ion exchange

NASA Technical Reports Server (NTRS)

Forrest, K.; Pagano, S. J.; Viehmann, W.

1986-01-01

Multimode channel waveguides have been formed in sodium aluminosilicate glass by field-assisted diffusion of Ag(+) ions from vacuum-evaporated Ag films. The two-dimensional refractive index profiles of the waveguides were controlled by varying the diffusion time, the diffusion temperature, and the electric field strength. Estimates of the diffusion rate through a strip aperture were obtained, assuming the electric field was strong 120-240 V/mm. The maximum change in refractive index in the sodium aluminosilicate glasses was estimated near 65 percent of the change in soda-lime silicate glass. The physical properties of the glasses are given in a table.

Investigation of defect-induced abnormal body current in fin field-effect-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kuan-Ju; Tsai, Jyun-Yu; Lu, Ying-Hsin

2015-08-24

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies

NASA Astrophysics Data System (ADS)

Gladysiewicz, M.; Janicki, L.; Misiewicz, J.; Sobanska, M.; Klosek, K.; Zytkiewicz, Z. R.; Kudrawiec, R.

2016-09-01

Polarization engineering of GaN-based heterostructures opens a way to develop advanced transistor heterostructures, although measurement of the electric field in such heterostructures is not a simple task. In this work, contactless electroreflectance (CER) spectroscopy has been applied to measure the electric field in GaN-based heterostructures. For a set of GaN(d  =  0, 5, 15, and 30 nm)/AlGaN(20 nm)/GaN(buffer) heterostructures a decrease of electric field in the GaN(cap) layer from 0.66 MV cm-1 to 0.27 MV cm-1 and an increase of the electric field in the AlGaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 have been observed with the increase in the GaN(cap) thickness from 5-30 nm. For a set of GaN(20 nm)/AlGaN(d  =  10, 20, 30, and 40 nm)/GaN(buffer) heterostructures a decrease of the electric field in the AlGaN layer from 1.77 MV cm-1 to 0.64 MV cm-1 and an increase of the electric field in the GaN layer from 0.57 MV cm-1 to 0.99 MV cm-1 were observed with the increase in the AlGaN thickness from 10-40 nm. To determine the distribution of the electric field in these heterostructures the Schrödinger and Poisson equations are solved in a self-consistent manner and matched with experimental data. It is shown that the built-in electric field in the GaN(cap) and AlGaN layers obtained from measurements does not reach values of electric field resulting only from polarization effects. The measured electric fields are smaller due to a screening of polarization effects by free carriers, which are inhomogeneously distributed across the heterostructure and accumulate at interfaces. The results clearly demonstrate that CER measurements supported by theoretical calculations are able to determine the electric field distribution in GaN-based heterostructures quantitatively, which is very important for polarization engineering in this material system.

Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

NASA Technical Reports Server (NTRS)

Freeman, Jon C.; Mueller, Wolfgang

2008-01-01

Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

Single-particle potential of the Λ hyperon in nuclear matter with chiral effective field theory NLO interactions including effects of Y N N three-baryon interactions

NASA Astrophysics Data System (ADS)

Kohno, M.

2018-03-01

Adopting hyperon-nucleon and hyperon-nucleon-nucleon interactions parametrized in chiral effective field theory, single-particle potentials of the Λ and Σ hyperons are evaluated in symmetric nuclear matter and in pure neutron matter within the framework of lowest-order Bruckner theory. The chiral NLO interaction bears strong Λ N -Σ N coupling. Although the Λ potential is repulsive if the coupling is switched off, the Λ N -Σ N correlation brings about the attraction consistent with empirical data. The Σ potential is repulsive, which is also consistent with empirical information. The interesting result is that the Λ potential becomes shallower beyond normal density. This provides the possibility of solving the hyperon puzzle without introducing ad hoc assumptions. The effects of the Λ N N -Λ N N and Λ N N -Σ N N three-baryon forces are considered. These three-baryon forces are first reduced to normal-ordered effective two-baryon interactions in nuclear matter and then incorporated in the G -matrix equation. The repulsion from the Λ N N -Λ N N interaction is of the order of 5 MeV at normal density and becomes larger with increasing density. The effects of the Λ N N -Σ N N coupling compensate the repulsion at normal density. The net effect of the three-baryon interactions on the Λ single-particle potential is repulsive at higher densities.

An analytical model for bio-electronic organic field-effect transistor sensors

NASA Astrophysics Data System (ADS)

Macchia, Eleonora; Giordano, Francesco; Magliulo, Maria; Palazzo, Gerardo; Torsi, Luisa

2013-09-01

A model for the electrical characteristics of Functional-Bio-Interlayer Organic Field-Effect Transistors (FBI-OFETs) electronic sensors is here proposed. Specifically, the output current-voltage characteristics of a streptavidin (SA) embedding FBI-OFET are modeled by means of the analytical equations of an enhancement mode p-channel OFET modified according to an ad hoc designed equivalent circuit that is also independently simulated with pspice. An excellent agreement between the model and the experimental current-voltage output characteristics has been found upon exposure to 5 nM of biotin. A good agreement is also found with the SA OFET parameters graphically extracted from the device transfer I-V curves.

Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels

NASA Astrophysics Data System (ADS)

Kawasaki, Naoko; Nagano, Takayuki; Kubozono, Yoshihiro; Sako, Yuuki; Morimoto, Yu; Takaguchi, Yutaka; Fujiwara, Akihiko; Chu, Chih-Chien; Imae, Toyoko

2007-12-01

Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n-channel normally off characteristics with the field-effect mobility of 2.7×10-3cm2V-1s-1 at 300K, whose value is twice as high as that (1.4×10-3cm2V-1s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π-conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.

Channel geometric scales effect on performance and optimization for serpentine proton exchange membrane fuel cell (PEMFC)

NASA Astrophysics Data System (ADS)

Youcef, Kerkoub; Ahmed, Benzaoui; Ziari, Yasmina; Fadila, Haddad

2017-02-01

A three dimensional computational fluid dynamics model is proposed in this paper to investigate the effect of flow field design and dimensions of bipolar plates on performance of serpentine proton exchange membrane fuel cell (PEMFC). A complete fuel cell of 25 cm2 with 25 channels have been used. The aim of the work is to investigate the effect of flow channels and ribs scales on overall performance of PEM fuel cell. Therefore, geometric aspect ratio parameter defined as (width of flow channel/width of rib) is used. Influences of the ribs and openings current collector scales have been studied and analyzed in order to find the optimum ratio between them to enhance the production of courant density of PEM fuel cell. Six kind of serpentine designs have been used in this paper included different aspect ratio varying from 0.25 to 2.33 while the active surface area and number of channels are keeping constant. Aspect ratio 0.25 corresponding of (0.4 mm channel width/ 1.6mm ribs width), and Aspect ratio2.33 corresponding of (0.6 mm channel width/ 1.4mm ribs width. The results show that the best flow field designs (giving the maximum density of current) are which there dimensions of channels width is minimal and ribs width is maximal (Γ≈0.25). Also decreasing width of channels enhance the pressure drop inside the PEM fuel cell, this causes an increase of gazes velocity and enhance convection process, therefore more power generation.

Urban Waters and the Caño Martín Peña (Martín Peña Channel, Puerto Rico)

EPA Pesticide Factsheets

The Martín Peña Channel Urban Waters Federal Partnership seeks to make significant contributions to the health and welfare of the eight communities that surround the Martín Peña Channel in San Juan, Puerto Rico.

Side-entry laser-beam zigzag irradiation of multiple channels in a microchip for simultaneous and highly sensitive detection of fluorescent analytes.

PubMed

Anazawa, Takashi; Yokoi, Takahide; Uchiho, Yuichi

2015-09-01

A simple and highly sensitive technique for laser-induced fluorescence detection on multiple channels in a plastic microchip was developed, and its effectiveness was demonstrated by laser-beam ray-trace simulations and experiments. In the microchip, with refractive index nC, A channels and B channels are arrayed alternately and respectively filled with materials with refractive indexes nA for electrophoresis analysis and nB for laser-beam control. It was shown that a laser beam entering from the side of the channel array traveled straight and irradiated all A channels simultaneously and effectively because the refractive actions by the A and B channels were counterbalanced according to the condition nA < nC < nB. This technique is thus called "side-entry laser-beam zigzag irradiation". As a demonstration of the technique, when nC = 1.53, nA = 1.41, nB = 1.66, and the cross sections of both eight A channels and seven B channels were the same isosceles trapezoids with 97° base angle, laser-beam irradiation efficiency on the eight A channels by the simulations was 89% on average and coefficient of variation was 4.4%. These results are far superior to those achieved by other conventional methods such as laser-beam expansion and scanning. Furthermore, fluorescence intensity on the eight A channels determined by the experiments agreed well with that determined by the simulations. Therefore, highly sensitive and uniform fluorescence detection on eight A channels was achieved. It is also possible to fabricate the microchips at low cost by plastic-injection molding and to make a simple and compact detection system, thereby promoting actual use of the proposed side-entry laser-beam zigzag irradiation in various fields.

Germanium Based Field-Effect Transistors: Challenges and Opportunities

PubMed Central

Goley, Patrick S.; Hudait, Mantu K.

2014-01-01

The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. PMID:28788569

Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

PubMed

Yan, Xiao; Liu, Chunsen; Li, Chao; Bao, Wenzhong; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2017-09-01

The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid deprivation of band-edge sharpness resulting from chemical doping, which make them perfect candidates for tunneling field effect transistors. Here this study presents SnSe 2 /WSe 2 van der Waals heterostructures with SnSe 2 as the p-layer and WSe 2 as the n-layer. The energy band alignment changes from a staggered gap band offset (type-II) to a broken gap (type-III) when changing the negative back-gate voltage to positive, resulting in the device operating as a rectifier diode (rectification ratio ~10 4 ) or an n-type tunneling field effect transistor, respectively. A steep average subthreshold swing of 80 mV dec -1 for exceeding two decades of drain current with a minimum of 37 mV dec -1 at room temperature is observed, and an evident trend toward negative differential resistance is also accomplished for the tunneling field effect transistor due to the high gate efficiency of 0.36 for single gate devices. The I ON /I OFF ratio of the transfer characteristics is >10 6 , accompanying a high ON current >10 -5 A. This work presents original phenomena of multilayer 2D van der Waals heterostructures which can be applied to low-power consumption devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Numerical Model Study of the Effect of Channel Deepening on Shoaling and Salinity Intrusion in the Savannah Estuary

DTIC Science & Technology

1989-12-01

H tY) T , iv OFTECHNICAL REPORT HL-89-26 A NUMERICAL MODEL STUDY OF THE EFFECT SOF CHANNEL DEEPENING ON SHOALING AND SALINITY INTRUSION IN THE... Study of the Effect of Channel Deepening on Shoaling and Salinity Intrusion in the Savannah Estuary 12. PERSONAL AUTHOR(S) Johnson, B. H.; Trawle, M. J...a multiple-connected system of channels. Results from a study in the Savannah Estuary show good agreement with 1985 field data on tides, velocities

Analysis of electric field distribution in GaAs metal-semiconductor field effect transistor with a field-modulating plate

NASA Astrophysics Data System (ADS)

Hori, Yasuko; Kuzuhara, Masaaki; Ando, Yuji; Mizuta, Masashi

2000-04-01

Electric field distribution in the channel of a field effect transistor (FET) with a field-modulating plate (FP) has been theoretically investigated using a two-dimensional ensemble Monte Carlo simulation. This analysis revealed that the introduction of FP is effective in canceling the influence of surface traps under forward bias conditions and in reducing the electric field intensity at the drain side of the gate edge under pinch-off bias conditions. This study also found that a partial overlap of the high-field region under the gate and that at the FP electrode is important for reducing the electric field intensity. The optimized metal-semiconductor FET with FP (FPFET) (LGF˜0.2 μm) exhibited a much lower peak electric field intensity than a conventional metal-semiconductor FET. Based on these numerically calculated results, we have proposed a design procedure to optimize the power FPFET structure with extremely high breakdown voltages while maintaining reasonable gain performance.

Large contact noise in graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Karnatak, Paritosh; Sai, Phanindra; Goswami, Srijit; Ghatak, Subhamoy; Kaushal, Sanjeev; Ghosh, Arindam

Fluctuations in the electrical resistance at the interface of atomically thin materials and metals, or the contact noise, can adversely affect the device performance but remains largely unexplored. We have investigated contact noise in graphene field effect transistors of varying device geometry and contact configuration, with channel carrier mobility ranging from 5,000 to 80,000 cm2V-1s-1. A phenomenological model developed for contact noise due to current crowding for two dimensional conductors, shows a dominant contact contribution to the measured resistance noise in all graphene field effect transistors when measured in the two-probe or invasive four probe configurations, and surprisingly, also in nearly noninvasive four probe (Hall bar) configuration in the high mobility devices. We identify the fluctuating electrostatic environment of the metal-channel interface as the major source of contact noise, which could be generic to two dimensional material-based electronic devices. The work was financially supported by the Department of Science and Technology, India and Tokyo Electron Limited.

Inhalational anaesthetics and n-alcohols share a site of action in the neuronal Shaw2 Kv channel

PubMed Central

Bhattacharji, Aditya; Klett, Nathan; Go, Ramon Christopher V; Covarrubias, Manuel

2010-01-01

Background and purpose: Neuronal ion channels are key targets of general anaesthetics and alcohol, and binding of these drugs to pre-existing and relatively specific sites is thought to alter channel gating. However, the underlying molecular mechanisms of this action are still poorly understood. Here, we investigated the neuronal Shaw2 voltage-gated K+ (Kv) channel to ask whether the inhalational anaesthetic halothane and n-alcohols share a binding site near the activation gate of the channel. Experimental approach: Focusing on activation gate mutations that affect channel modulation by n-alcohols, we investigated n-alcohol-sensitive and n-alcohol-resistant Kv channels heterologously expressed in Xenopus oocytes to probe the functional modulation by externally applied halothane using two-electrode voltage clamping and a gas-tight perfusion system. Key results: Shaw2 Kv channels are reversibly inhibited by halothane in a dose-dependent and saturable manner (K0.5= 400 µM; nH= 1.2). Also, discrete mutations in the channel's S4S5 linker are sufficient to reduce or confer inhibition by halothane (Shaw2-T330L and Kv3.4-G371I/T378A respectively). Furthermore, a point mutation in the S6 segment of Shaw2 (P410A) converted the halothane-induced inhibition into halothane-induced potentiation. Lastly, the inhibition resulting from the co-application of n-butanol and halothane is consistent with the presence of overlapping binding sites for these drugs and weak binding cooperativity. Conclusions and implications: These observations strongly support a molecular model of a general anaesthetic binding site in the Shaw2 Kv channel. This site may involve the amphiphilic interface between the S4S5 linker and the S6 segment, which plays a pivotal role in Kv channel activation. PMID:20136839

Alpha effect of Alfv{acute e}n waves and current drive in reversed-field pinches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Litwin, C.; Prager, S.C.

Circularly polarized Alfv{acute e}n waves give rise to an {alpha}-dynamo effect that can be exploited to drive parallel current. In a {open_quotes}laminar{close_quotes} magnetic the effect is weak and does not give rise to significant currents for realistic parameters (e.g., in tokamaks). However, in reversed-field pinches (RFPs) in which magnetic field in the plasma core is stochastic, a significant enhancement of the {alpha} effect occurs. Estimates of this effect show that it may be a realistic method of current generation in the present-day RFP experiments and possibly also in future RFP-based fusion reactors. {copyright} {ital 1998 American Institute of Physics.}

Current conduction in junction gate field effect transistors. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Kim, C.

1970-01-01

The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.

PubMed

Bagnall, Kevin R; Moore, Elizabeth A; Badescu, Stefan C; Zhang, Lenan; Wang, Evelyn N

2017-11-01

As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E 2 (high), A 1 longitudinal optical (LO), and E 2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Bagnall, Kevin R.; Moore, Elizabeth A.; Badescu, Stefan C.; Zhang, Lenan; Wang, Evelyn N.

2017-11-01

As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E2 (high), A1 longitudinal optical (LO), and E2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi

2015-02-16

We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al{sub 2}O{sub 3} and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm{sup 2}/V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al{sub 2}O{sub 3} ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm{sup 2}/V s for GaSb-OI p-MOSFETs with themore » 20-nm-thick GaSb layer.« less

In2O3 nanowire based field effect transistor for biological sensors.

NASA Astrophysics Data System (ADS)

Zeng, Zhongming; Wang, Kai; Zhou, Weilie

2008-03-01

Semiconductor nanowires (NWs) are attracting considerable attention due to their nanoscale dimensions and enormous surface-to-volume ratios. Many applications have been demonstrated in toxic gas, protein, small molecule and viruses sensing because of their superior sensing performances. Indium oxide (In2O3) NWs have been successfully applied for toxic gas and small organic molecule sensing. In our experiment, In2O3 NWs based field effect transistors (FET) are fabricated for virus (Ricin) detections. Single-crystalline In2O3 NWs with diameters around 100 nm were synthesized by the thermal evaporation. The nanodevice based on In2O3 NWs bridges the source/drain electrodes with a channel length of ˜5 μm. Basic transport properties of devices were measured before biological detection. The I-V curves with the gate voltage Vg=0 shows good ohmic contact and the resistance is about 10 Mφ. The back-gate effect on the conductivity showed that In2O3 NW is working as n-type channel with obvious back-gate effect, which is much stronger than the reported results. The nanodevices used as virus detection will be also discussed.

The Geomorphically Effective Hydrograph: An Emerging Concept For Interpreting Channel Morphology And Evolution

NASA Astrophysics Data System (ADS)

Grant, G.; Hempel, L. A.; Marwan, H.; Eaton, B. C.; Lewis, S.

2017-12-01

Predicting how alluvial channels adjust to changes in their flow and sediment regimes is one of the Holy Grails of geomorphology. Consider Lane's balance - one of the most widely recognized conceptual models in geomorphology - which graphically shows how a change in any one of the driving variables of slope, grain size, sediment transport rate, or discharge can be accommodated by changes in the other variables. Much of the history of process geomorphology addresses how channels respond to these controlling factors. Yet the emphasis has been disproportionately focused on the effects and consequences of changing sediment transport rates or grain size. Much less attention has been paid to how changing discharge itself, particularly over short, event-based timescales influences the channel. Discharge has typically been treated as a single value - often the bankfull discharge - with little attention paid to how the unsteady nature of flow during floods may influence the morphology of the channel. More attention has been paid recently to the effect of hydrograph shape on channel characteristics, notably the texture of the channel bed. There is little theory and scant data, however, that highlights how the hydrograph affects the channel. We have begun to address this problem through models and targeted experiments. Our goal is to explore the idea of the geomorphically effective hydrograph: the concept that hydrographs with different forms, durations, and sequences play a major, controlling role in shaping the form and organization of alluvial channels. We report on results from both field studies and flume experiments that lend support to this hypothesis. We compare channel forms in channels with radically different flow regimes. The distinctive rectangular shape, constant slope, and absence of alluvial bars in spring-fed channels are in sharp contrast to the more asymmetric channels with regular pool/riffle patterns observed in systems where discharge varies over orders

Downstream effects of the Pelton-Round Butte hydroelectric project on bedload, transport, channel morphology, and channel-bed texture, lower Deschutes River, Oregon.

Treesearch

Heidi Fassnacht; Ellen M. McClure; Gordon E. Grant; Peter C. Klingeman

2003-01-01

Field, laboratory, and historical data provide the basis for interpreting the effects of the Pelton-Round Butte dam complex on the surface water hydrology and geomorphology of the lower Deschutes River, Oregon, USA. The river's response to upstream impoundment and flow regulation is evaluated in terms of changes in predicted bedload transport rates, channel...

Graphene-based field-effect transistor biosensors

DOEpatents

Chen; , Junhong; Mao, Shun; Lu, Ganhua

2017-06-14

The disclosure provides a field-effect transistor (FET)-based biosensor and uses thereof. In particular, to FET-based biosensors using thermally reduced graphene-based sheets as a conducting channel decorated with nanoparticle-biomolecule conjugates. The present disclosure also relates to FET-based biosensors using metal nitride/graphene hybrid sheets. The disclosure provides a method for detecting a target biomolecule in a sample using the FET-based biosensor described herein.

Role of N-terminal domain and accessory subunits in controlling deactivation-inactivation coupling of Kv4.2 channels.

PubMed

Barghaan, Jan; Tozakidou, Magdalini; Ehmke, Heimo; Bähring, Robert

2008-02-15

We examined the relationship between deactivation and inactivation in Kv4.2 channels. In particular, we were interested in the role of a Kv4.2 N-terminal domain and accessory subunits in controlling macroscopic gating kinetics and asked if the effects of N-terminal deletion and accessory subunit coexpression conform to a kinetic coupling of deactivation and inactivation. We expressed Kv4.2 wild-type channels and N-terminal deletion mutants in the absence and presence of Kv channel interacting proteins (KChIPs) and dipeptidyl aminopeptidase-like proteins (DPPs) in human embryonic kidney 293 cells. Kv4.2-mediated A-type currents at positive and deactivation tail currents at negative membrane potentials were recorded under whole-cell voltage-clamp and analyzed by multi-exponential fitting. The observed changes in Kv4.2 macroscopic inactivation kinetics caused by N-terminal deletion, accessory subunit coexpression, or a combination of the two maneuvers were compared with respective changes in deactivation kinetics. Extensive correlation analyses indicated that modulatory effects on deactivation closely parallel respective effects on inactivation, including both onset and recovery kinetics. Searching for the structural determinants, which control deactivation and inactivation, we found that in a Kv4.2 Delta 2-10 N-terminal deletion mutant both the initial rapid phase of macroscopic inactivation and tail current deactivation were slowed. On the other hand, the intermediate and slow phase of A-type current decay, recovery from inactivation, and tail current decay kinetics were accelerated in Kv4.2 Delta 2-10 by KChIP2 and DPPX. Thus, a Kv4.2 N-terminal domain, which may control both inactivation and deactivation, is not necessary for active modulation of current kinetics by accessory subunits. Our results further suggest distinct mechanisms for Kv4.2 gating modulation by KChIPs and DPPs.

The fundamental downscaling limit of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamaluy, Denis, E-mail: mamaluy@sandia.gov; Gao, Xujiao

2015-05-11

We predict that within next 15 years a fundamental down-scaling limit for CMOS technology and other Field-Effect Transistors (FETs) will be reached. Specifically, we show that at room temperatures all FETs, irrespective of their channel material, will start experiencing unacceptable level of thermally induced errors around 5-nm gate lengths. These findings were confirmed by performing quantum mechanical transport simulations for a variety of 6-, 5-, and 4-nm gate length Si devices, optimized to satisfy high-performance logic specifications by ITRS. Different channel materials and wafer/channel orientations have also been studied; it is found that altering channel-source-drain materials achieves only insignificant increasemore » in switching energy, which overall cannot sufficiently delay the approaching downscaling limit. Alternative possibilities are discussed to continue the increase of logic element densities for room temperature operation below the said limit.« less

The fundamental downscaling limit of field effect transistors

DOE PAGES

Mamaluy, Denis; Gao, Xujiao

2015-05-12

We predict that within next 15 years a fundamental down-scaling limit for CMOS technology and other Field-Effect Transistors (FETs) will be reached. Specifically, we show that at room temperatures all FETs, irrespective of their channel material, will start experiencing unacceptable level of thermally induced errors around 5-nm gate lengths. These findings were confirmed by performing quantum mechanical transport simulations for a variety of 6-, 5-, and 4-nm gate length Si devices, optimized to satisfy high-performance logic specifications by ITRS. Different channel materials and wafer/channel orientations have also been studied; it is found that altering channel-source-drain materials achieves only insignificant increasemore » in switching energy, which overall cannot sufficiently delay the approaching downscaling limit. Alternative possibilities are discussed to continue the increase of logic element densities for room temperature operation below the said limit.« less

Phosphorylation of purified mitochondrial Voltage-Dependent Anion Channel by c-Jun N-terminal Kinase-3 modifies channel voltage-dependence.

PubMed

Gupta, Rajeev; Ghosh, Subhendu

2017-06-01

Voltage-Dependent Anion Channel (VDAC) phosphorylated by c-Jun N-terminal Kinase-3 (JNK3) was incorporated into the bilayer lipid membrane. Single-channel electrophysiological properties of the native and the phosphorylated VDAC were compared. The open probability versus voltage curve of the native VDAC displayed symmetry around the voltage axis, whereas that of the phosphorylated VDAC showed asymmetry. This result indicates that phosphorylation by JNK3 modifies voltage-dependence of VDAC.

33 CFR 162.30 - Channel of Tuckerton Creek, N.J.; navigation.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Channel of Tuckerton Creek, N.J.; navigation. 162.30 Section 162.30 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND... Tuckerton Creek, N.J.; navigation. (a) Power boats or other vessels propelled by machinery shall not proceed...

An 8-channel transceiver 7-channel receive RF coil setup for high SNR ultrahigh-field MRI of the shoulder at 7T.

PubMed

Rietsch, Stefan H G; Pfaffenrot, Viktor; Bitz, Andreas K; Orzada, Stephan; Brunheim, Sascha; Lazik-Palm, Andrea; Theysohn, Jens M; Ladd, Mark E; Quick, Harald H; Kraff, Oliver

2017-12-01

In this work, we present an 8-channel transceiver (Tx/Rx) 7-channel receive (Rx) radiofrequency (RF) coil setup for 7 T ultrahigh-field MR imaging of the shoulder. A C-shaped 8-channel Tx/Rx coil was combined with an anatomically close-fitting 7-channel Rx-only coil. The safety and performance parameters of this coil setup were evaluated on the bench and in phantom experiments. The 7 T MR imaging performance of the shoulder RF coil setup was evaluated in in vivo measurements using a 3D DESS, a 2D PD-weighted TSE sequence, and safety supervision based on virtual observation points. Distinct SNR gain and acceleration capabilities provided by the additional 7-channel Rx-only coil were demonstrated in phantom and in vivo measurements. The power efficiency indicated good performance of each channel and a maximum B 1 + of 19 μT if the hardware RF power limits of the MR system were exploited. MR imaging of the shoulder was demonstrated with clinically excellent image quality and submillimeter spatial resolution. The presented 8-channel transceiver 7-channel receive RF coil setup was successfully applied for in vivo 7 T MRI of the shoulder providing a clear SNR gain vs the transceiver array without the additional receive array. Homogeneous images across the shoulder region were obtained using 8-channel subject-specific phase-only RF shimming. © 2017 American Association of Physicists in Medicine.

Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santi, C. de; Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Meneghesso, G.

2014-08-18

With this paper we propose a test method for evaluating the dynamic performance of GaN-based transistors, namely, gate-frequency sweep measurements: the effectiveness of the method is verified by characterizing the dynamic performance of Gate Injection Transistors. We demonstrate that this method can provide an effective description of the impact of traps on the transient performance of Heterojunction Field Effect Transistors, and information on the properties (activation energy and cross section) of the related defects. Moreover, we discuss the relation between the results obtained by gate-frequency sweep measurements and those collected by conventional drain current transients and double pulse characterization.

Semi-preparative asymmetrical flow field-flow fractionation: A closer look at channel dimensions and separation performance.

PubMed

Bria, Carmen R M; Skelly, Patrick W; Morse, James R; Schaak, Raymond E; Williams, S Kim Ratanathanawongs

2017-05-26

The design and performance of a semi-preparative asymmetrical flow field-flow fractionation (SP-AF4) channel are investigated with the objective of better understanding and exploiting the relationship between channel dimensions, sample loading, and resolution. Most size-based separations of nanometer and submicrometer particles are currently limited to analytical scale quantities (<100μg). However, there is a strong need to fractionate and collect larger quantities so that fundamental properties of the more narrowly dispersed fractions can be studied using additional characterization methods and for subsequent applications. In this work, dimensions of the spacer that defines the form of SP-AF4 channels are varied and their performances are assessed with respect to sample focusing position and loading. Separations are performed in aqueous and organic carrier fluids. A critical evaluation of channel dimensions showed that increasing the channel breadth is a practical and effective route to maintaining separation resolution while increasing sample loads to milligram quantities. Good size resolution (∼1.0) is achieved for separations of 10mg of 50 and 100nm silica nanoparticles suspended in water and up to 0.6mg of ∼10 to 35nm inorganic hybrid nanoparticles suspended in tetrahydrofuran. This work represents important advances in the understanding of SP-AF4 separations and extends sample loading capacities in both aqueous and organic solvents. Copyright © 2017 Elsevier B.V. All rights reserved.

A new mode of regulation of N-type inactivation in a Caenorhabditis elegans voltage-gated potassium channel.

PubMed

Cai, Shi-Qing; Sesti, Federico

2007-06-22

N-type inactivation in voltage-gated K+ (Kv) channels is a widespread means to modulate neuronal excitability and signaling. Here we have shown a novel mechanism of N-type inactivation in a Caenorhabditis elegans Kv channel. The N-terminal sequence of KVS-1 contains a domain of 22 amino acids that resembles the inactivation ball in A-type channels, which is preceded by a domain of eighteen amino acids. Wild type KVS-1 currents can be described as A-type; however, their kinetics are significantly (approximately 5-fold) slower. When the putative inactivation ball is deleted, the current becomes non-inactivating. Inactivation is restored in non-inactivating channels by diffusion of the missing inactivation domain in the cytoplasm. Deletion of the domain in front of the ball speeds inactivation kinetics approximately 5-fold. We conclude that KVS-1 is the first example of a novel type of Kv channel simultaneously possessing an N-inactivating ball preceded by an N inactivation regulatory domain (NIRD) that acts to slow down inactivation through steric mechanisms.

The influence of a magnetic field on the heat transfer of a magnetic nanofluid in a sinusoidal channel

NASA Astrophysics Data System (ADS)

Valiallah Mousavi, S.; Barzegar Gerdroodbary, M.; Sheikholeslami, Mohsen; Ganji, D. D.

2016-09-01

In this study, two dimensional numerical simulations are performed to investigate the influence of the magnetic field on the nanofluid flow inside a sinusoidal channel. This work reveals the influence of variable magnetic field in the heat transfer of heat exchanger while the mixture is in a single phase. In this heat exchanger, the inner tube is sinusoidal and the outer tube is considered smooth. The magnetic field is applied orthogonal to the axis of the sinusoidal tube. In our study, the ferrofluid (water with 4 vol% nanoparticles (Fe3O4)) flows in a channel with sinusoidal bottom. The finite volume method with the SIMPLEC algorithm is used for handling the pressure-velocity coupling. The numerical results present validated data with experimentally measured data and show good agreement with measurement. The influence of different parameters, like the intensity of magnetic field and Reynolds number, on the heat transfer is investigated. According to the obtained results, the sinusoidal formation of the internal tube significantly increases the Nusselt number inside the channel. Our findings show that the magnetic field increases the probability of eddy formation inside the cavities and consequently enhances the heat transfer (more than 200%) in the vicinity of the magnetic field at low Reynolds number ( Re=50). In addition, the variation of the skin friction shows that the magnetic field increases the skin friction (more than 600%) inside the sinusoidal channel.

Updates to Post-Flash Calibration for the Advanced Camera for Surveys Wide Field Channel

NASA Astrophysics Data System (ADS)

Miles, Nathan

2018-03-01

This report presents a new technique for generating the post-flash calibration reference file for the Advanced Camera for Surveys (ACS) Wide Field Channel (WFC). The new method substantially reduces, if not, eliminates all together the presence of dark current artifacts arising from improper dark subtraction, while simultaneously preserving flat-field artifacts. The stability of the post-flash calibration reference file over time is measured using data taken yearly since 2012 and no statistically significant deviations are found. An analysis of all short-flashed darks taken every two days since January 2015 reveals a periodic modulation of the LED intensity on timescales of about one year. This effect is most readily explained by changes to the local temperature in the area surrounding the LED. However, a slight offset between the periods of the temperature and LED modulations lends to the possibility that the effect is a chance observation of the two sinusoids at an unfortunate point in their beat cycle.

Magnetic field effects on peristaltic flow of blood in a non-uniform channel

NASA Astrophysics Data System (ADS)

Latha, R.; Rushi Kumar, B.

2017-11-01

The objective of this paper is to carry out the effect of the MHD on the peristaltic transport of blood in a non-uniform channel have been explored under long wavelength approximation with low (zero) Reynolds number. Blood is made of an incompressible, viscous and electrically conducting. Explicit expressions for the axial velocity, axial pressure gradient are derived using long wavelength assumptions with slip and regularity conditions. It is determined that the pressure gradient diminishes as the couple stress parameter increments and it decreases as the magnetic parameter increments. We additionally concentrate the embedded parameters through graphs.

Meta-gated channel for the discrete control of electromagnetic fields

NASA Astrophysics Data System (ADS)

Yang, Rui; Wang, Hui; Shi, Ayuan; Zhang, Aofang; Wang, Jing; Gao, Dongxing; Lei, Zhenya; Hu, Bowei

2016-08-01

We demonstrate the meta-gate controlled wave propagation through multiple metallic plates with properly devised sub-wavelength defect apertures. Different from using gradient refractive-index meta-materials or phase-discontinuity meta-surfaces to produce the discrepancy between the incident angle and the refractive angle, our technique redirects electromagnetic fields by setting-up discrete transmission gateways between adjacent meta-gates and creates the perfect channels for the wave propagation. Electromagnetic fields can be assigned in the response of the driving frequency of meta-gates with extraordinary transmissions and propagate simply relying on their pre-set locations as illustrated by the meta-gate guided electromagnetic fields travelling in the paths of the Silk-Road and the contour line of Xi'an city where the Silk-Road starts. The meta-gate concept, offering the feasibility of the discrete control of electromagnetic fields with gating routes, may pave an alternative way for precisely transmitting of signals and efficiently sharing of resource in the communication.

Insights from investigating the interactions of adamantane-based drugs with the M2 proton channel from the H1N1 swine virus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jing-Fang; Wei, Dong-Qing, E-mail: dqwei@gordonlifescience.org; Gordon Life Science Institute, 13784 Torrey Del Mar Drive, San Diego, CA 92130

The M2 proton channel is one of indispensable components for the influenza A virus that plays a vital role in its life cycle and hence is an important target for drug design against the virus. In view of this, the three-dimensional structure of the H1N1-M2 channel was developed based on the primary sequence taken from a patient recently infected by the H1N1 (swine flu) virus. With an explicit water-membrane environment, molecular docking studies were performed for amantadine and rimantadine, the two commercial drugs generally used to treat influenza A infection. It was found that their binding affinity to the H1N1-M2more » channel is significantly lower than that to the H5N1-M2 channel, fully consistent with the recent report that the H1N1 swine virus was resistant to the two drugs. The findings and the relevant analysis reported here might provide useful structural insights for developing effective drugs against the new swine flu virus.« less

Insights from investigating the interactions of adamantane-based drugs with the M2 proton channel from the H1N1 swine virus.

PubMed

Wang, Jing-Fang; Wei, Dong-Qing; Chou, Kuo-Chen

2009-10-16

The M2 proton channel is one of indispensable components for the influenza A virus that plays a vital role in its life cycle and hence is an important target for drug design against the virus. In view of this, the three-dimensional structure of the H1N1-M2 channel was developed based on the primary sequence taken from a patient recently infected by the H1N1 (swine flu) virus. With an explicit water-membrane environment, molecular docking studies were performed for amantadine and rimantadine, the two commercial drugs generally used to treat influenza A infection. It was found that their binding affinity to the H1N1-M2 channel is significantly lower than that to the H5N1-M2 channel, fully consistent with the recent report that the H1N1 swine virus was resistant to the two drugs. The findings and the relevant analysis reported here might provide useful structural insights for developing effective drugs against the new swine flu virus.

End region and current consolidation effects upon the performance of an MHD channel for the ETF conceptual design

NASA Technical Reports Server (NTRS)

Wang, S. Y.; Smith, J. M.

1981-01-01

The effects of MHD channel end regions on the overall power generation were considered. The peak plant thermodynamic efficiency was found to be slightly lower than for the active region (41%). The channel operating point for the peak efficiency was shifted to the supersonic mode (Mach No., M sub c approx. 1.1) rather than the previous subsonic operation (M sub c approx. 0.9). The sensitivity of the channel performance to the B-field, diffuser recovery coefficient, channel load parameter, Mach number, and combustor pressure is also discussed. In addition, methods for operating the channel in a constant-current mode are investigated. This mode is highly desirable from the standpoint of simplifying the current and voltage consolidation for the inverter system. This simplification could result in significant savings in the cost of the equipment. The initial results indicate that this simplification is possible, even under a strict Hall field constraint, with resonable plant thermodynamic efficiency (40.5%).

Mars Pathfinder Landing Site Workshop 2: Characteristics of the Ares Vallis Region and Field Trips in the Channeled Scabland, Washington

NASA Technical Reports Server (NTRS)

Golombek, M. P. (Editor); Edgett, K. S. (Editor); Rice, J. W. , Jr. (Editor)

1995-01-01

Mars Pathfinder will place a single lander on the surface of Mars on July 4, 1997, following a December 1996 launch. As a result of the very successful first Mars Pathfinder Landing Site Workshop, the project has selected the Ares Vallis outflow channel in Chryse Planitia as the landing site. This location is where a large catastrophic outflow channel debouches into the northern lowlands. A second workshop and series of field trips, entitled Mars Pathfinder Landing Site Workshop 2: Characteristics of the Ares Vallis Region and Field Trips in the Channeled Scabland, Washington, were held in Spokane and Moses Lake, Washington. The purpose of the workshop was to provide a focus for learning as much as possible about the Ares Vallis region on Mars before landing there. The rationale is that the more that can be learned about the general area prior to landing, the better scientists will be able interpret the observations made by the lander and rover and place them in the proper geologic context. The field trip included overflights and surface investigations of the Channeled Scabland (an Earth analog for the martian catastrophic outflow channels), focusing on areas particularly analogous to Ares Vallis and the landing site. The overflights were essential for placing the enormous erosional and depositional features of the Channeled Scabland into proper three-dimensional context. The field trips were a joint educational outreach activity involving K-12 science educators, Mars Pathfinder scientists and engineers, and interested scientists from the Mars scientific community. Part 1 of the technical report on this workshop includes a description of the Mars Pathfinder mission, abstracts accepted for presentation at the workshop, an introduction to the Channeled Scabland, and field trip guides for the overflight and two field trips. This part, Part 2, includes the program for the workshop, summaries of the workshop technical sessions, a summary of the field trips and ensuing

Effect of the particle-hole channel on BCS–Bose-Einstein condensation crossover in atomic Fermi gases

PubMed Central

Chen, Qijin

2016-01-01

BCS–Bose-Einstein condensation (BEC) crossover is effected by increasing pairing strength between fermions from weak to strong in the particle-particle channel, and has attracted a lot of attention since the experimental realization of quantum degenerate atomic Fermi gases. Here we study the effect of the (often dropped) particle-hole channel on the zero T gap Δ(0), superfluid transition temperature Tc, the pseudogap at Tc, and the mean-field ratio 2Δ(0)/, from BCS through BEC regimes, using a pairing fluctuation theory which includes self-consistently the contributions of finite-momentum pairs and features a pseudogap in single particle excitation spectrum. Summing over the infinite particle-hole ladder diagrams, we find a complex dynamical structure for the particle-hole susceptibility χph, and conclude that neglecting the self-energy feedback causes a serious over-estimate of χph. While our result in the BCS limit agrees with Gor’kov et al., the particle-hole channel effect becomes more complex and pronounced in the crossover regime, where χph is reduced by both a smaller Fermi surface and a big (pseudo)gap. Deep in the BEC regime, the particle-hole channel contributions drop to zero. We predict a density dependence of the magnetic field at the Feshbach resonance, which can be used to quantify χph and test different theories. PMID:27183875

Consolidation of Fe-N Magnets Using Equal Channel Angular Extrusion

DTIC Science & Technology

2016-03-23

Consolidation of Fe-N Magnets Using Equal Channel Angular Extrusion SG Sankar Advanced Materials Corporation (AMC), Pittsburgh, PA LJ Kecskes Weapons and...at the US Army Research Laboratory (ARL), Weapons and Materials Research Directorate, at Aberdeen Proving Ground, Maryland. Unlike conventional...Widenmeyer M, Hansen TC, Niewa R. Formation and decomposition of metastable α’’-Fe16N2 from in-situ powder neutron diffraction and thermal analysis. Zeit

Carrier polarity engineering in carbon nanotube field-effect transistors by induced charges in polymer insulator

NASA Astrophysics Data System (ADS)

Aikawa, Shinya; Kim, Sungjin; Thurakitseree, Theerapol; Einarsson, Erik; Inoue, Taiki; Chiashi, Shohei; Tsukagoshi, Kazuhito; Maruyama, Shigeo

2018-01-01

We present that the electrical conduction type in carbon nanotube field-effect transistors (CNT-FETs) can be converted by induced charges in a polyvinyl alcohol (PVA) insulator. When the CNT channels are covered with pure PVA, the FET characteristics clearly change from unipolar p-type to ambipolar. The addition of ammonium ions (NH4+) in the PVA leads to further conversion to unipolar n-type conduction. The capacitance - voltage characteristics indicate that a high density of positive charges is induced at the PVA/SiO2 interface and within the bulk PVA. Electrons are electrostatically accumulated in the CNT channels due to the presence of the positive charges, and thus, stable n-type conduction of PVA-coated CNT-FETs is observed, even under ambient conditions. The mechanism for conversion of the conduction type is considered to be electrostatic doping due to the large amount of positive charges in the PVA. A blue-shift of the Raman G-band peak was observed for CNTs coated with NH4+-doped PVA, which corresponds to unipolar n-type CNT-FET behavior. These results confirm that carrier polarity engineering in CNT-FETs can be achieved with a charged PVA passivation layer.

Measurements with magnetic field in the National Spherical Torus Experiment using the motional Stark effect with laser induced fluorescence diagnostic

NASA Astrophysics Data System (ADS)

Foley, E. L.; Levinton, F. M.

2013-04-01

The motional Stark effect with laser-induced fluorescence diagnostic (MSE-LIF) has been installed and tested on the National Spherical Torus Experiment (NSTX) at the Princeton Plasma Physics Lab. The MSE-LIF diagnostic will be capable of measuring radially resolved profiles of magnetic field magnitude or pitch angle in NSTX plasmas. The system includes a diagnostic neutral hydrogen beam and a laser which excites the n = 2 to n = 3 transition. A viewing system has been implemented which will support up to 38 channels from the plasma edge to past the magnetic axis. First measurements of MSE-LIF signals in the presence of small applied magnetic fields in neutral gas are reported.

The effect of ratio between rigid plant height and water depth on the manning’s coefficient in open channel

NASA Astrophysics Data System (ADS)

Rizalihadi, M.; Ziana; Shaskia, Nina; Asharly, H.

2018-05-01

One of the important factors in channel dimension is the Manning’s coefficient ( n ). This coefficient is influenced not only by the channel roughness but also by the presence of plants in the channel. The aim of the study is to see the effect of the ratio between the height of the rigid plant and water depth on the Manning’s coefficient (n) in open channel. The study was conducted in open channel with 15.5 m long, 0.5 m wide and 1.0 m high, in which at the center of the channel is planted with the rigid plants with a density of 42 plants/m2. The flow was run with a discharge of 0.013 m3/s at 6 ratios of Hplants/Hwater, namely: 0; 0.2; 0.6; 0.8; 1,0 and 1,2, to obtain the velocity and water profiles. Then the value of n is analyzed using Manning’s equation. The results showed that the mean velocity becomes decrease 17.81-34.01% as increase the ratio of Hplants/Hwater. This results in increasing n value to become 1.22-1.52 times compared to the unplanted channel ( no =0.038). So, it can be concluded that the ratio between the rigid plant’s height and water depth in the open channel can affect the value of Manning coefficient.

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

NASA Astrophysics Data System (ADS)

Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Suryo Wasisto, Hutomo; Waag, Andreas

2017-03-01

Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

On channel interactions in nested Hall thrusters

NASA Astrophysics Data System (ADS)

Cusson, S. E.; Georgin, M. P.; Dragnea, H. C.; Dale, E. T.; Dhaliwal, V.; Boyd, I. D.; Gallimore, A. D.

2018-04-01

Nested Hall thrusters use multiple, concentric discharge channels to increase thrust density. They have shown enhanced performance in multi-channel operation relative to the superposition of individual channels. The X2, a two-channel nested Hall thruster, was used to investigate the mechanism behind this improved performance. It is shown that the local pressure near the thruster exit plane is an order of magnitude higher in two-channel operation. This is due to the increased neutral flow inherent to the multi-channel operation. Due to the proximity of the discharge channels in nested Hall thrusters, these local pressure effects are shown to be responsible for the enhanced production of thrust during multi-channel operation via two mechanisms. The first mechanism is the reduction of the divergence angle due to an upstream shift of the acceleration region. The displacement of the acceleration region was detected using laser induced fluorescence measurements of the ion velocity profile. Analysis of the change in beam divergence indicates that, at an operating condition of 150 V and 30 A, this effect increases the thrust by 8.7 ± 1.2 mN. The second mechanism is neutral ingestion from the adjacent channel resulting in a 2.0 + 0/-0.2 mN increase in thrust. Combined, these mechanisms are shown to explain, within uncertainty, the 17 ± 6.2 mN improvement in thrust during dual channel operation of the X2.

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

DTIC Science & Technology

2009-07-01

making III–V FETs has been different than for silicon FETs. Growth techniques such as molecular beam epitaxy (MBE) are used to create heterostructures in...lities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures...article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel

Effect of N-substituents on redox, optical, and electronic properties of naphthalene bisimides used for field-effect transistors fabrication.

PubMed

Gawrys, Pawel; Djurado, David; Rimarcík, Ján; Kornet, Aleksandra; Boudinet, Damien; Verilhac, Jean-Marie; Lukes, Vladimír; Wielgus, Ireneusz; Zagorska, Malgorzata; Pron, Adam

2010-02-11

Three groups of naphthalene bisimides were synthesized and comparatively studied, namely, alkyl bisimides, alkylaryl ones, and novel bisimides containing the alkylthienyl moiety in the N-substituent. The experimental absorption spectra measured in CHCl(3) exhibit one intensive absorption band that is uniformly detected in the spectral range of 340 to 400 nm for all studied molecules. This band consists of three or four vibronic peaks. The introduction of an alkylthienyl group results in the appearance of an additional band (in the spectral range from 282 to 326 nm, depending on the position of the substituent) that can be ascribed to the pi-pi* transition in the thienyl chromophore. The minimal substituent effect on the lowest electronic transitions was explained using the quantum chemical calculations based on the time-dependent density functional theory. The investigation of the shapes of frontier orbitals have also shown that the oxidation of bisimides containing thiophene moiety is primary connected with the electron abstraction from the thienyl ring. To the contrary, the addition of an electron in the reduction process leads to an increase in the electron density in the central bisimide core. As shown by the electrochemical measurements, the onset of the first reduction potential (so-called "electrochemically determined LUMO level") is sensitive toward the type of the substituent being shifted from about -3.72 eV for bisimides with alkyl substituents to about -3.83 eV for alkylaryl ones and to about -3.94 eV for bisimides with thienyl groups. The presence of the thienyl ring also lowers the energy difference between the HOMO and LUMO orbitals. These experimental data can be well correlated with the DFT calculations in terms of HOMO/LUMO shapes and energies. Taking into account the low position of their LUMO level and their highly ordered supramolecular organization, the new bisimides are good candidates for the use in n-channel field effect transistors

Hydrothermally Processed Photosensitive Field-Effect Transistor Based on ZnO Nanorod Networks

NASA Astrophysics Data System (ADS)

Kumar, Ashish; Bhargava, Kshitij; Dixit, Tejendra; Palani, I. A.; Singh, Vipul

2016-11-01

Formation of a stable, reproducible zinc oxide (ZnO) nanorod-network-based photosensitive field-effect transistor using a hydrothermal process at low temperature has been demonstrated. K2Cr2O7 additive was used to improve adhesion and facilitate growth of the ZnO nanorod network over the SiO2/Si substrate. Transistor characteristics obtained in the dark resemble those of the n-channel-mode field-effect transistor (FET). The devices showed I on/ I off ratio above 8 × 102 under dark condition, field-effect mobility of 4.49 cm2 V-1 s-1, and threshold voltage of -12 V. Further, under ultraviolet (UV) illumination, the FET exhibited sensitivity of 2.7 × 102 in off-state (-10 V) versus 1.4 in on-state (+9.7 V) of operation. FETs based on such nanorod networks showed good photoresponse, which is attributed to the large surface area of the nanorod network. The growth temperature for ZnO nanorod networks was kept at 110°C, enabling a low-temperature, cost-effective, simple approach for high-performance ZnO-based FETs for large-scale production. The role of network interfaces in the FET performance is also discussed.

[Effect of pulse magnetic field on distribution of neuronal action potential].

PubMed

Zheng, Yu; Cai, Di; Wang, Jin-Hai; Li, Gang; Lin, Ling

2014-08-25

The biological effect on the organism generated by magnetic field is widely studied. The present study was aimed to observe the change of sodium channel under magnetic field in neurons. Cortical neurons of Kunming mice were isolated, subjected to 15 Hz, 1 mT pulse magnetic stimulation, and then the currents of neurons were recorded by whole-cell patch clamp. The results showed that, under magnetic stimulation, the activation process of Na(+) channel was delayed, and the inactivation process was accelerated. Given the classic three-layer model, the polarization diagram of cell membrane potential distribution under pulse magnetic field was simulated, and it was found that the membrane potential induced was associated with the frequency and intensity of magnetic field. Also the effect of magnetic field-induced current on action potential was simulated by Hodgkin-Huxley (H-H) model. The result showed that the generation of action potential was delayed, and frequency and the amplitudes were decreased when working current was between -1.32 μA and 0 μA. When the working current was higher than 0 μA, the generation frequency of action potential was increased, and the change of amplitudes was not obvious, and when the working current was lower than -1.32 μA, the time of rising edge and amplitudes of action potential were decreased drastically, and the action potential was unable to generate. These results suggest that the magnetic field simulation can affect the distribution frequency and amplitude of action potential of neuron via sodium channel mediation.

Bovine chromaffin cells possess FTX-sensitive calcium channels.

PubMed

Gandía, L; Albillos, A; García, A G

1993-07-30

The effects of the synthetic analogue of the toxin from the venom of the funnel-web spider Agenelopsis aperta (sFTX) on whole-cell Ba2+ currents through Ca2+ channels were studied in cultured bovine chromaffin cells. sFTX selectively and reversibly blocked a significant component (55 +/- 3%) of the whole-cell IBa. Effects of sFTX were additive to those of omega-conotoxin GVIA, a selective blocker of N-type Ca2+ channels, and those of furnidipine, a novel dihydropyridine L-type Ca2+ channel blocker. We conclude that the cultured bovine chromaffin cells, in addition to N- and L-type Ca2+ channels, possess a P-type component in their whole-cell currents through their Ca2+ channels.

p - n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurchak, Anatolii I.; Eliseev, Eugene A.; Kalinin, Sergei V.

The p - n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate–dielectric-layer–graphene-channel–ferroelectric-substrate nanostructure consideredmore » here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p - n junctions.« less

Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors

PubMed Central