Sample records for n-in-p silicon sensors

  1. P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environments

    NASA Astrophysics Data System (ADS)

    Printz, Martin; CMS Tracker Collaboration

    2016-09-01

    In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to 1.5 ×1015neq /cm2 corresponding to 3000fb-1 after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20 cm < R < 110 cm) of CMS will consist of n-in-p type sensors. This technology is more radiation hard but also the manufacturing is more challenging compared to p-in-n type sensors due to additional process steps in order to suppress the accumulation of electrons between the readout strips. One possible isolation technique of adjacent strips is the p-stop structure which is a p-type material implantation with a certain pattern for each individual strip. However, electrical breakdown and charge collection studies indicate that the process parameters of the p-stop structure have to be carefully calibrated in order to achieve a sufficient strip isolation but simultaneously high breakdown voltages. Therefore a study of the isolation characteristics with four different silicon sensor manufacturers has been executed in order to determine the most suitable p-stop parameters for the harsh radiation environment during HL-LHC. Several p-stop doping concentrations, doping depths and different p-stop pattern have been realized and experiments before and after irradiation with protons and neutrons have been performed and compared to T-CAD simulation studies with Synopsys Sentaurus. The measurements combine the electrical characteristics measured with a semi-automatic probestation with Sr90 signal measurements and analogue readout. Furthermore, some samples have been investigated with the help of a cosmic telescope with high resolution allowing charge collection studies of MIPs penetrating the sensor between two strips.

  2. Impact of low-dose electron irradiation on $$n^{+}p$$ silicon strip sensors

    DOE PAGES

    Adam, W.

    2015-08-28

    The response of n +p silicon strip sensors to electrons from a 90Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n + strips were studied. The electrons from the 90Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dosemore » rate in the SiO 2 at the maximum was about 50 Gy(SiO 2)/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO 2 by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. As a result, the relevance of the measurements for the design of n +p strip sensors is discussed.« less

  3. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

    PubMed

    Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

    2016-01-06

    Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  4. Determination of the p-spray profile for n+ p silicon sensors using a MOSFET

    NASA Astrophysics Data System (ADS)

    Fretwurst, E.; Garutti, E.; Klanner, R.; Kopsalis, I.; Schwandt, J.; Weberpals, M.

    2017-09-01

    The standard technique to electrically isolate the n+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p+-implants. Although the knowledge of the p+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with ≈ 3 . 5 × 1012cm-2 of boron and 〈 100 〉 crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3 . 5 × 1012cm-3 and 2 × 1015cm-3 for the MOSFET with p+-implant, is determined down to a distance of a fraction of a μm from the Si-SiO2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed.

  5. Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

    PubMed Central

    de Cesare, Giampiero; Nascetti, Augusto; Caputo, Domenico

    2015-01-01

    In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied. PMID:26016913

  6. P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC

    NASA Astrophysics Data System (ADS)

    Adam, W.; Bergauer, T.; Brondolin, E.; Dragicevic, M.; Friedl, M.; Frühwirth, R.; Hoch, M.; Hrubec, J.; König, A.; Steininger, H.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Lauwers, J.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Beghin, D.; Brun, H.; Clerbaux, B.; Delannoy, H.; De Lentdecker, G.; Fasanella, G.; Favart, L.; Goldouzian, R.; Grebenyuk, A.; Karapostoli, G.; Lenzi, Th.; Léonard, A.; Luetic, J.; Postiau, N.; Seva, T.; Vanlaer, P.; Vannerom, D.; Wang, Q.; Zhang, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; De Clercq, J.; D'Hondt, J.; Deroover, K.; Lowette, S.; Moortgat, S.; Moreels, L.; Python, Q.; Skovpen, K.; Van Mulders, P.; Van Parijs, I.; Bakhshiansohi, H.; Bondu, O.; Brochet, S.; Bruno, G.; Caudron, A.; Delaere, C.; Delcourt, M.; De Visscher, S.; Francois, B.; Giammanco, A.; Jafari, A.; Komm, M.; Krintiras, G.; Lemaitre, V.; Magitteri, A.; Mertens, A.; Michotte, D.; Musich, M.; Piotrzkowski, K.; Quertenmont, L.; Szilasi, N.; Vidal Marono, M.; Wertz, S.; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G. H.; Härkönen, J.; Lampén, T.; Luukka, P.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Baulieu, G.; Boudoul, G.; Caponetto, L.; Combaret, C.; Contardo, D.; Dupasquier, T.; Gallbit, G.; Lumb, N.; Mirabito, L.; Perries, S.; Vander Donckt, M.; Viret, S.; Agram, J.-L.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.-M.; Chabert, E.; Chanon, N.; Charles, L.; Conte, E.; Fontaine, J.-Ch.; Gross, L.; Hosselet, J.; Jansova, M.; Tromson, D.; Autermann, C.; Feld, L.; Karpinski, W.; Kiesel, K. M.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Rauch, M.; Schael, S.; Schomakers, C.; Schulz, J.; Schwering, G.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Pooth, O.; Stahl, A.; Aldaya, M.; Asawatangtrakuldee, C.; Beernaert, K.; Bertsche, D.; Contreras-Campana, C.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Gallo, E.; Garay Garcia, J.; Hansen, K.; Haranko, M.; Harb, A.; Hauk, J.; Keaveney, J.; Kalogeropoulos, A.; Kleinwort, C.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Pitzl, D.; Reichelt, O.; Savitskyi, M.; Schuetze, P.; Walsh, R.; Zuber, A.; Biskop, H.; Buhmann, P.; Centis-Vignali, M.; Garutti, E.; Haller, J.; Hoffmann, M.; Lapsien, T.; Matysek, M.; Perieanu, A.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schwandt, J.; Sonneveld, J.; Steinbrück, G.; Vormwald, B.; Wellhausen, J.; Abbas, M.; Amstutz, C.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Caselle, M.; Colombo, F.; Dierlamm, A.; Freund, B.; Hartmann, F.; Heindl, S.; Husemann, U.; Kornmayer, A.; Kudella, S.; Muller, Th.; Simonis, H. J.; Steck, P.; Weber, M.; Weiler, Th.; Anagnostou, G.; Asenov, P.; Assiouras, P.; Daskalakis, G.; Kyriakis, A.; Loukas, D.; Paspalaki, L.; Siklér, F.; Veszprémi, V.; Bhardwaj, A.; Dalal, R.; Jain, G.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; Creanza, D.; De Palma, M.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Silvestris, L.; Maggi, G.; Martiradonna, S.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Di Mattia, A.; Giordano, F.; Potenza, R.; Saizu, M. A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Ciulli, V.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Latino, G.; Lenzi, P.; Meschini, M.; Paoletti, S.; Russo, L.; Scarlini, E.; Sguazzoni, G.; Strom, D.; Viliani, L.; Ferro, F.; Lo Vetere, M.; Robutti, E.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Malvezzi, S.; Manzoni, R. A.; Menasce, D.; Moroni, L.; Pedrini, D.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Pozzobon, N.; Tosi, M.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Riceputi, E.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Alunni Solestizi, L.; Biasini, M.; Bilei, G. M.; Cecchi, C.; Checcucci, B.; Ciangottini, D.; Fanò, L.; Gentsos, C.; Ionica, M.; Leonardi, R.; Manoni, E.; Mantovani, G.; Marconi, S.; Mariani, V.; Menichelli, M.; Modak, A.; Morozzi, A.; Moscatelli, F.; Passeri, D.; Placidi, P.; Postolache, V.; Rossi, A.; Saha, A.; Santocchia, A.; Storchi, L.; Spiga, D.; Androsov, K.; Azzurri, P.; Arezzini, S.; Bagliesi, G.; Basti, A.; Boccali, T.; Borrello, L.; Bosi, F.; Castaldi, R.; Ciampa, A.; Ciocci, M. A.; Dell'Orso, R.; Donato, S.; Fedi, G.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Lomtadze, T.; Magazzu, G.; Martini, L.; Mazzoni, E.; Messineo, A.; Moggi, A.; Morsani, F.; Palla, F.; Palmonari, F.; Raffaelli, F.; Rizzi, A.; Savoy-Navarro, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Bellan, R.; Costa, M.; Covarelli, R.; Da Rocha Rolo, M.; Demaria, N.; Rivetti, A.; Dellacasa, G.; Mazza, G.; Migliore, E.; Monteil, E.; Pacher, L.; Ravera, F.; Solano, A.; Fernandez, M.; Gomez, G.; Jaramillo Echeverria, R.; Moya, D.; Gonzalez Sanchez, F. J.; Vila, I.; Virto, A. L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Bonnaud, J.; Caratelli, A.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Auria, A.; Detraz, S.; Deyrail, D.; Dondelewski, O.; Faccio, F.; Frank, N.; Gadek, T.; Gill, K.; Honma, A.; Hugo, G.; Jara Casas, L. M.; Kaplon, J.; Kornmayer, A.; Kottelat, L.; Kovacs, M.; Krammer, M.; Lenoir, P.; Mannelli, M.; Marchioro, A.; Marconi, S.; Mersi, S.; Martina, S.; Michelis, S.; Moll, M.; Onnela, A.; Orfanelli, S.; Pavis, S.; Peisert, A.; Pernot, J.-F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; di Calafiori, D.; Casal, B.; Berger, P.; Djambazov, L.; Donega, M.; Grab, C.; Hits, D.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Meinhard, M.; Perozzi, L.; Roeser, U.; Starodumov, A.; Tavolaro, V.; Wallny, R.; Zhu, D.; Amsler, C.; Bösiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; de Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.-C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; Seif El Nasr-Storey, S.; Cole, J.; Hoad, C.; Hobson, P.; Morton, A.; Reid, I. D.; Auzinger, G.; Bainbridge, R.; Dauncey, P.; Hall, G.; James, T.; Magnan, A.-M.; Pesaresi, M.; Raymond, D. M.; Uchida, K.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Olmedo, M.; Si, W.; Yates, B. R.; Gerosa, R.; Sharma, V.; Vartak, A.; Yagil, A.; Zevi Della Porta, G.; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; Mullin, S.; Patterson, A.; Qu, H.; White, D.; Dominguez, A.; Bartek, R.; Cumalat, J. P.; Ford, W. T.; Jensen, F.; Johnson, A.; Krohn, M.; Leontsinis, S.; Mulholland, T.; Stenson, K.; Wagner, S. R.; Apresyan, A.; Bolla, G.; Burkett, K.; Butler, J. N.; Canepa, A.; Cheung, H. W. K.; Chramowicz, J.; Christian, D.; Cooper, W. E.; Deptuch, G.; Derylo, G.; Gingu, C.; Grünendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Kahlid, F.; Lei, C. M.; Lipton, R.; Lopes De Sá, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Schneider, B.; Sellberg, G.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Berry, D. R.; Chen, X.; Ennesser, L.; Evdokimov, A.; Evdokimov, O.; Gerber, C. E.; Hofman, D. J.; Makauda, S.; Mills, C.; Sandoval Gonzalez, I. D.; Alimena, J.; Antonelli, L. J.; Francis, B.; Hart, A.; Hill, C. S.; Parashar, N.; Stupak, J.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D. H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Khalil, S.; Kropivnitskaya, A.; Majumder, D.; Wilson, G.; Ivanov, A.; Mendis, R.; Mitchell, T.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Bloom, K.; Claes, D. R.; Fangmeier, C.; Gonzalez Suarez, R.; Monroy, J.; Siado, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Gershtein, Y.; Halkiadakis, E.; Kyriacou, S.; Lath, A.; Nash, K.; Osherson, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Norberg, S.; Ramirez Vargas, J. E.; Alyari, M.; Dolen, J.; Godshalk, A.; Harrington, C.; Iashvili, I.; Kharchilava, A.; Nguyen, D.; Parker, A.; Rappoccio, S.; Roozbahani, B.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; McDermott, K.; Mirman, N.; Rinkevicius, A.; Ryd, A.; Salvati, E.; Skinnari, L.; Soffi, L.; Tao, Z.; Thom, J.; Tucker, J.; Zientek, M.; Akgün, B.; Ecklund, K. M.; Kilpatrick, M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Covarelli, R.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K. A.

    2017-06-01

    The upgrade of the LHC to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at the CMS experiment. Based on these results, the collaboration has chosen to use n-in-p type silicon sensors and focus further investigations on the optimization of that sensor type. This paper describes the main measurement results and conclusions that motivated this decision.

  7. Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

    NASA Astrophysics Data System (ADS)

    Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

    2018-02-01

    P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

  8. P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC

    DOE PAGES

    Adam, W.; Bergauer, T.; Brondolin, E.; ...

    2017-06-27

    The upgrade of the LHC to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at the CMS experiment. Based on these results, the collaboration has chosen to use n-in-p type silicon sensors and focus further investigations on the optimization of that sensor type. Furthermore, this paper describes the main measurement results and conclusions thatmore » motivated this decision.« less

  9. P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adam, W.; Bergauer, T.; Brondolin, E.

    The upgrade of the LHC to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at the CMS experiment. Based on these results, the collaboration has chosen to use n-in-p type silicon sensors and focus further investigations on the optimization of that sensor type. Furthermore, this paper describes the main measurement results and conclusions thatmore » motivated this decision.« less

  10. Trapping in irradiated p +-n-n - silicon sensors at fluences anticipated at the HL-LHC outer tracker

    DOE PAGES

    Adam, W.

    2016-04-22

    The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200μm thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to 3 x 10 15 neq/cm 2. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulationmore » assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. Furthermore, the effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.« less

  11. Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results

    NASA Astrophysics Data System (ADS)

    Unno, Y.; Edwards, S. O.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Lynn, D.; Carter, J. R.; Hommels, L. B. A.; Robinson, D.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.; Ferrere, D.; Gonzalez Sevilla, S.; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; Eklund, L.; McMullen, T.; McEwan, F.; O`Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Nishimura, R.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Allport, P. P.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandic, I.; Mikuz, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Arai, Y.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Mikestikova, M.; Bevan, A.; Beck, G.; Ely, S.; Fadeyev, V.; Galloway, Z.; Grillo, A. A.; Martinez-McKinney, F.; Ngo, J.; Parker, C.; Sadrozinski, H. F.-W.; Schumacher, D.; Seiden, A.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Paganis, S.; Jinnouchi, O.; Motohashi, K.; Todome, K.; Yamaguchi, D.; Hara, K.; Hagihara, M.; Garcia, C.; Jimenez, J.; Lacasta, C.; Marti i Garcia, S.; Soldevila, U.

    2014-11-01

    We have been developing a novel radiation-tolerant n+-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.

  12. Optimizing Floating Guard Ring Designs for FASPAX N-in-P Silicon Sensors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Shin, Kyung-Wook; Bradford, Robert; Lipton, Ronald

    2016-10-06

    FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intendedmore » $$\\mbox{13 $$MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $$10^{\\text{5}}$$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.« less

  13. Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays

    NASA Astrophysics Data System (ADS)

    Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

    2014-10-01

    Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly

  14. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOEpatents

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  15. Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sun, Chang, E-mail: chang.sun@anu.edu.au; Rougieux, Fiacre E.; Macdonald, Daniel

    2014-06-07

    Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr{sub i} and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ{sub n}/σ{sub p} of Cr{sub i} and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombinationmore » activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.« less

  16. Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays.

    PubMed

    Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

    2014-11-07

    Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.

  17. Long term performance stability of silicon sensors

    NASA Astrophysics Data System (ADS)

    Mori, R.; Betancourt, C.; Kühn, S.; Hauser, M.; Messmer, I.; Hasenfratz, A.; Thomas, M.; Lohwasser, K.; Parzefall, U.; Jakobs, K.

    2015-10-01

    The HL-LHC investigations on silicon particle sensor performance are carried out with the intention to reproduce the harsh environments foreseen, but usually in individual short measurements. Recently, several groups have observed a decrease in the charge collection of silicon strip sensors after several days, in particular on sensors showing charge multiplication. This phenomenon has been explained with a surface effect, the increase of charge sharing due to the increment of positive charge in the silicon oxide coming from the source used for charge collection measurements. Observing a similar behaviour in other sensors for which we can exclude this surface effect, we propose and investigate alternative explanations, namely trapping related effects (change of polarization) and annealing related effects. Several n-on-p strip sensors, as-processed and irradiated with protons and neutrons up to 5 ×1015neq /cm2, have been subjected to charge collection efficiency measurements for several days, while parameters like the impedance have been monitored. The probable stressing conditions have been changed in an attempt to recover the collected charge in case of a decrease. The results show that for the investigated sensors the effect of charge sharing induced by a radioactive source is not important, and a main detrimental factor is due to very high voltage, while at lower voltages the performance is stable.

  18. Studies of silicon p-n junction solar cells

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.; Lindholm, F. A.

    1979-01-01

    To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

  19. Electrochemical Formation of a p-n Junction on Thin Film Silicon Deposited in Molten Salt.

    PubMed

    Zou, Xingli; Ji, Li; Yang, Xiao; Lim, Taeho; Yu, Edward T; Bard, Allen J

    2017-11-15

    Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior and photovoltaic effects, indicating promise for application in low-cost silicon thin film solar cells.

  20. Detection of protein kinases P38 based on reflectance spectroscopy with n-type porous silicon microcavities for diagnosing hydatidosis hydatid disease

    NASA Astrophysics Data System (ADS)

    Lv, Xiaoyi; Lv, Guodong; Jia, Zhenhong; Wang, Jiajia; Mo, Jiaqing

    2014-11-01

    Detection of protein kinases P38 of Echinococcus granulosus and its homologous antibody have great value for early diagnosis and treatment of hydatidosis hydatid disease. In this experiment, n-type mesoporous silicon microcavities have been successfully fabricated without KOH etching or oxidants treatment that reported in other literature. We observed the changes of the reflectivity spectrum before and after the antigen-antibody reaction by n-type mesoporous silicon microcavities. The binding of protein kinases P38 and its homologous antibody causes red shifts in the reflection spectrum of the sensor, and the red shift was proportional to the protein kinases P38 concentration with linear relationship.

  1. Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

    1985-01-01

    n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

  2. Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

    2016-08-01

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  3. Recent Advances in Silicon Nanomaterial-Based Fluorescent Sensors.

    PubMed

    Wang, Houyu; He, Yao

    2017-02-03

    During the past decades, owing to silicon nanomaterials' unique optical properties, benign biocompatibility, and abundant surface chemistry, different dimensional silicon nanostructures have been widely employed for rationally designing and fabricating high-performance fluorescent sensors for the detection of various chemical and biological species. Among of these, zero-dimensional silicon nanoparticles (SiNPs) and one-dimensional silicon nanowires (SiNWs) are of particular interest. Herein, we focus on reviewing recent advances in silicon nanomaterials-based fluorescent sensors from a broad perspective and discuss possible future directions. Firstly, we introduce the latest achievement of zero-dimensional SiNP-based fluorescent sensors. Next, we present recent advances of one-dimensional SiNW-based fluorescent sensors. Finally, we discuss the major challenges and prospects for the development of silicon-based fluorescent sensors.

  4. Recent Advances in Silicon Nanomaterial-Based Fluorescent Sensors

    PubMed Central

    Wang, Houyu; He, Yao

    2017-01-01

    During the past decades, owing to silicon nanomaterials’ unique optical properties, benign biocompatibility, and abundant surface chemistry, different dimensional silicon nanostructures have been widely employed for rationally designing and fabricating high-performance fluorescent sensors for the detection of various chemical and biological species. Among of these, zero-dimensional silicon nanoparticles (SiNPs) and one-dimensional silicon nanowires (SiNWs) are of particular interest. Herein, we focus on reviewing recent advances in silicon nanomaterials-based fluorescent sensors from a broad perspective and discuss possible future directions. Firstly, we introduce the latest achievement of zero-dimensional SiNP-based fluorescent sensors. Next, we present recent advances of one-dimensional SiNW-based fluorescent sensors. Finally, we discuss the major challenges and prospects for the development of silicon-based fluorescent sensors. PMID:28165357

  5. Thin n-i-p silicon solar cell

    NASA Technical Reports Server (NTRS)

    Meulenberg, A., Jr.; Allison, J. F.; Arndt, R. A.

    1980-01-01

    A space solar cell concept which combines high cell output with low diffusion length damage coefficients is presented for the purpose of reducing solar cell susceptibility to degradation from the radiation environment. High resistivity n-i-p silicon solar cells ranging from upward of 83 micron-cm were exposed to AM0 ultraviolet illumination. It is shown that high resistivity cells act as extrinsic devices under dark conditions and as intrinsic devices under AM0 illumination. Resistive losses in thin n-i-p cells are found to be comparable to those in low resistivity cells. Present voltage limitations appear to be due to generation and recombination in the diffused regions.

  6. Characterization of nanometer-thick polycrystalline silicon with phonon-boundary scattering enhanced thermoelectric properties and its application in infrared sensors.

    PubMed

    Zhou, Huchuan; Kropelnicki, Piotr; Lee, Chengkuo

    2015-01-14

    Although significantly reducing the thermal conductivity of silicon nanowires has been reported, it remains a challenge to integrate silicon nanowires with structure materials and electrodes in the complementary metal-oxide-semiconductor (CMOS) process. In this paper, we investigated the thermal conductivity of nanometer-thick polycrystalline silicon (poly-Si) theoretically and experimentally. By leveraging the phonon-boundary scattering, the thermal conductivity of 52 nm thick poly-Si was measured as low as around 12 W mK(-1) which is only about 10% of the value of bulk single crystalline silicon. The ZT of n-doped and p-doped 52 nm thick poly-Si was measured as 0.067 and 0.024, respectively, while most previously reported data had values of about 0.02 and 0.01 for a poly-Si layer with a thickness of 0.5 μm and above. Thermopile infrared sensors comprising 128 pairs of thermocouples made of either n-doped or p-doped nanometer-thick poly-Si strips in a series connected by an aluminium (Al) metal interconnect layer are fabricated using microelectromechanical system (MEMS) technology. The measured vacuum specific detectivity (D*) of the n-doped and p-doped thermopile infrared (IR) sensors are 3.00 × 10(8) and 1.83 × 10(8) cm Hz(1/2) W(-1) for sensors of 52 nm thick poly-Si, and 5.75 × 10(7) and 3.95 × 10(7) cm Hz(1/2) W(-1) for sensors of 300 nm thick poly-Si, respectively. The outstanding thermoelectric properties indicate our approach is promising for diverse applications using ultrathin poly-Si technology.

  7. Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

    1985-01-01

    The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

  8. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

    PubMed Central

    Al-Hardan, Naif H.; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M.; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N.

    2016-01-01

    In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions. PMID:27338381

  9. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor.

    PubMed

    Al-Hardan, Naif H; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N

    2016-06-07

    In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

  10. Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

    NASA Astrophysics Data System (ADS)

    Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

    2015-08-01

    A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

  11. A pH sensor with a double-gate silicon nanowire field-effect transistor

    NASA Astrophysics Data System (ADS)

    Ahn, Jae-Hyuk; Kim, Jee-Yeon; Seol, Myeong-Lok; Baek, David J.; Guo, Zheng; Kim, Chang-Hoon; Choi, Sung-Jin; Choi, Yang-Kyu

    2013-02-01

    A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the two gates. One gate is a driving gate which controls the current flow, and the other is a supporting gate which amplifies the shift of the threshold voltage, which is a sensing metric, and which arises from changes in the pH. The pH signal is also amplified through modulation of the gate oxide thickness.

  12. A theory of the n-i-p silicon solar cell

    NASA Technical Reports Server (NTRS)

    Goradia, C.; Weinberg, I.; Baraona, C.

    1981-01-01

    A computer model has been developed, based on an analytical theory of the high base resistivity BSF n(+)(pi)p(+) or p(+)(nu)n(+) silicon solar cell. The model makes very few assumptions and accounts for nonuniform optical generation, generation and recombination in the junction space charge region, and bandgap narrowing in the heavily doped regions. The paper presents calculated results based on this model and compares them to available experimental data. Also discussed is radiation damage in high base resistivity n(+)(pi)p(+) space solar cells.

  13. Dual ohmic contact to N- and P-type silicon carbide

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  14. Development of N+ in P pixel sensors for a high-luminosity large hadron collider

    NASA Astrophysics Data System (ADS)

    Kamada, Shintaro; Yamamura, Kazuhisa; Unno, Yoshinobu; Ikegami, Yoichi

    2014-11-01

    Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge.

  15. Signal coupling to embedded pitch adapters in silicon sensors

    NASA Astrophysics Data System (ADS)

    Artuso, M.; Betancourt, C.; Bezshyiko, I.; Blusk, S.; Bruendler, R.; Bugiel, S.; Dasgupta, R.; Dendek, A.; Dey, B.; Ely, S.; Lionetto, F.; Petruzzo, M.; Polyakov, I.; Rudolph, M.; Schindler, H.; Steinkamp, O.; Stone, S.

    2018-01-01

    We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes the electric field inside the sensor, resulting in slowed signal formation on the nearby strips and a pick-up effect on the pitch adapter. This can result in an inefficiency to detect particles passing through the pitch adapter region. All these effects have been observed in the beam test data.

  16. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

    PubMed

    Dong, Yan; Son, Dong-Hyeok; Dai, Quan; Lee, Jun-Hyeok; Won, Chul-Ho; Kim, Jeong-Gil; Chen, Dunjun; Lee, Jung-Hee; Lu, Hai; Zhang, Rong; Zheng, Youdou

    2018-04-24

    The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al 0.83 In 0.17 N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG) density and a thinner barrier layer in Al 0.83 In 0.17 N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

  17. Acousto-defect interaction in irradiated and non-irradiated silicon n+-p structures

    NASA Astrophysics Data System (ADS)

    Olikh, O. Ya.; Gorb, A. M.; Chupryna, R. G.; Pristay-Fenenkov, O. V.

    2018-04-01

    The influence of ultrasound on current-voltage characteristics of non-irradiated silicon n+-p structures as well as silicon structures exposed to reactor neutrons or 60Co gamma radiation has been investigated experimentally. It has been found that the ultrasound loading of the n+-p structure leads to the reversible change of shunt resistance, carrier lifetime, and ideality factor. Specifically, considerable acoustically induced alteration of the ideality factor and the space charge region lifetime was observed in the irradiated samples. The experimental results were described by using the models of coupled defect level recombination, Shockley-Read-Hall recombination, and dislocation-induced impedance. The experimentally observed phenomena are associated with the increase in the distance between coupled defects as well as the extension of the carrier capture coefficient of complex point defects and dislocations. It has been shown that divacancies and vacancy-interstitial oxygen pairs are effectively modified by ultrasound in contrast to interstitial carbon-interstitial oxygen complexes.

  18. UV-visible sensors based on polymorphous silicon

    NASA Astrophysics Data System (ADS)

    Guedj, Cyril S.; Cabarrocas, Pere R. i.; Massoni, Nicolas; Moussy, Norbert; Morel, Damien; Tchakarov, Svetoslav; Bonnassieux, Yvan

    2003-09-01

    UV-based imaging systems can be used for low-altitude rockets detection or biological agents identification (for instance weapons containing ANTHRAX). Compared to conventional CCD technology, CMOS-based active pixel sensors provide several advantages, including excellent electro-optical performances, high integration, low voltage operation, low power consumption, low cost, long lifetime, and robustness against environment. The monolithic integration of UV, visible and infrared detectors on the same uncooled CMOS smart system would therefore represent a major advance in the combat field, for characterization and representation of targets and backgrounds. In this approach, we have recently developped a novel technology using polymorphous silicon. This new material, fully compatible with above-IC silicon technology, is made of nanometric size ordered domains embedded in an amorphous matrix. The typical quantum efficiency of detectors made of this nano-material reach up to 80 % at 550 nm and 30 % in the UV range, depending of the design and the growth parameters. Furthermore, a record dark current of 20 pA/cm2 at -3 V has been reached. In addition, this new generation of sensors is significantly faster and more stable than their amorphous silicon counterparts. In this paper, we will present the relationship between the sensor technology and the overall performances.

  19. Radiation damage in lithium-counterdoped N/P silicon solar cells

    NASA Technical Reports Server (NTRS)

    Hermann, A. M.; Swartz, C. K.; Brandhorst, H. W., Jr.; Weinberg, I.

    1980-01-01

    The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

  20. CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors.

    PubMed

    Linkohr, St; Pletschen, W; Schwarz, S U; Anzt, J; Cimalla, V; Ambacher, O

    2013-02-20

    The CIP stability of pH sensitive ion-sensitive field-effect transistors based on AlGaN/GaN heterostructures was investigated. For epitaxial AlGaN/GaN films with high structural quality, CIP tests did not degrade the sensor surface and pH sensitivities of 55-58 mV/pH were achieved. Several different passivation schemes based on SiO(x), SiN(x), AlN, and nanocrystalline diamond were compared with special attention given to compatibility to standard microelectronic device technologies as well as biocompatibility of the passivation films. The CIP stability was evaluated with a main focus on the morphological stability. All stacks containing a SiO₂ or an AlN layer were etched by the NaOH solution in the CIP process. Reliable passivations withstanding the NaOH solution were provided by stacks of ICP-CVD grown and sputtered SiN(x) as well as diamond reinforced passivations. Drift levels about 0.001 pH/h and stable sensitivity over several CIP cycles were achieved for optimized sensor structures. Copyright © 2012 Elsevier B.V. All rights reserved.

  1. The Solid State Image Sensor's Contribution To The Development Of Silicon Technology

    NASA Astrophysics Data System (ADS)

    Weckler, Gene P.

    1985-12-01

    Until recently, a solid-state image sensor with full television resolution was a dream. However, the dream of a solid state image sensor has been a driving force in the development of silicon technology for more than twenty-five years. There are probably many in the main stream of semiconductor technology who would argue with this; however, the solid state image sensor was conceived years before the invention of the semi conductor RAM or the microprocessor (i.e., even before the invention of the integrated circuit). No other potential application envisioned at that time required such complexity. How could anyone have ever hoped in 1960 to make a semi conductor chip containing half-a-million picture elements, capable of resolving eight to twelve bits of infornation, and each capable of readout rates in the tens of mega-pixels per second? As early as 1960 arrays of p-n junctions were being investigated as the optical targets in vidicon tubes, replacing the photoconductive targets. It took silicon technology several years to catch up with these dreamers.

  2. Results of a real-time irradiation of lithium P/N and conventional N/P silicon solar cells.

    NASA Technical Reports Server (NTRS)

    Reynard, D. L.; Peterson, D. G.

    1972-01-01

    Eight types of lithium-diffused P/N and three types of conventional 10 ohm-cm N/P silicon solar cells were irradiated at four different temperatures with a strontium-90 radioisotope at a rate typical of that expected in earth orbit. The six-month irradiation confirmed earlier accelerator results, showed that certain cell types outperform others at the various temperatures, and, in general, verified the recent improvements and potential usefulness of lithium solar cells. The experimental approach and statistical methods and analyses employed yielded increased confidence in the validity of the results. Injection level effects were observed to be significant.

  3. Piezoresistive effect in metal-semiconductor-metal structures on p-type GaN

    NASA Astrophysics Data System (ADS)

    Gaska, R.; Shur, M. S.; Bykhovski, A. D.; Yang, J. W.; Khan, M. A.; Kaminski, V. V.; Soloviov, S. M.

    2000-06-01

    We report on a strong piezoresistive effect in metal-semiconductor-metal structures fabricated on p-type GaN. The maximum measured gauge factor was 260, which is nearly two times larger than for piezoresistive silicon transducers. We attribute this large sensitivity to applied strain to the combination of two mechanisms: (i) a high piezoresistance of bulk p-GaN and (ii) a strong piezoresistive effect in a Schottky contact on p-GaN. The obtained results demonstrate that GaN-based structures can be suitable for stress/pressure sensor applications.

  4. Spectral sensitivity characteristics simulation for silicon p-i-n photodiode

    NASA Astrophysics Data System (ADS)

    Urchuk, S. U.; Legotin, S. A.; Osipov, U. V.; Elnikov, D. S.; Didenko, S. I.; Astahov, V. P.; Rabinovich, O. I.; Yaromskiy, V. P.; Kuzmina, K. A.

    2015-11-01

    In this paper the simulation results of the spectral sensitivity characteristics of silicon p-i-n-photodiodes are presented. The analysis of the characteristics of the semiconductor material (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the characteristics of photosensitive structures in order to optimize them was carried out.

  5. Photonic Crystal Sensors Based on Porous Silicon

    PubMed Central

    Pacholski, Claudia

    2013-01-01

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

  6. Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

    NASA Technical Reports Server (NTRS)

    Yang, Jie

    2015-01-01

    Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

  7. Beam test of novel n-in-p strip sensors for high radiation environment

    NASA Astrophysics Data System (ADS)

    Kubota, T.; Kishida, T.; Jinnouchi, O.; Ikegami, Y.; Unno, Y.; Terada, S.; Mitsui, S.; Tamii, A.; Aoi, T.; Hanagaki, K.; Hara, K.; Kimura, N.; Takashima, R.; Takubo, Y.; Tojo, J.; Nagai, K.; Nakano, I.; Yorita, K.

    2013-12-01

    Highly radiation tolerant n-in-p strip sensors have been developed for the high-luminosity LHC (HL-LHC). This paper reports the results of measurements with 392 MeV kinetic energy proton beam at RCNP in December 2011. The data was taken with a new DAQ system consisting of an universal read-out board ‘SEABAS’ and beam tracking telescopes whose spacial resolution is better than 5 μm. The aim of this beam test is to evaluate the new 1 cm×1 cm n-in-p miniature sensors before and after 1015 neq cm-2 irradiation. The median charge of un-irradiated sensor is 6.2 fC at full depletion voltage, while the median charge after 1015 neq cm-2 irradiation of the sensor is 4.2 fC. The novel Punch-Through-Protection (PTP) has been implemented in these sensors. The length of active region of the sensor around PTP is observed to be decreased by 12 μm in the irradiated sensors at 1015 neq cm-2.

  8. CHARACTERIZATION OF A THIN SILICON SENSOR FOR ACTIVE NEUTRON PERSONAL DOSEMETERS.

    PubMed

    Takada, M; Nunomiya, T; Nakamura, T; Matsumoto, T; Masuda, A

    2016-09-01

    A thin silicon sensor has been developed for active neutron personal dosemeters for use by aircrews and first responders. This thin silicon sensor is not affected by the funneling effect, which causes detection of cosmic protons and over-response to cosmic neutrons. There are several advantages to the thin silicon sensor: a decrease in sensitivity to gamma rays, an improvement of the energy detection limit for neutrons down to 0.8 MeV and an increase in the sensitivity to fast neutrons. Neutron response functions were experimentally obtained using 2.5 and 5 MeV monoenergy neutron beams and a (252)Cf neutron source. Simulation results using the Monte Carlo N-Particle transport code agree quite well with the experimental ones when an energy deposition region shaped like a circular truncated cone is used in place of a cylindrical region. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  9. Silicon force sensor

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Galambos, Paul C.; Crenshaw, Thomas B.; Nishida, Erik E.

    The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload uponmore » the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.« less

  10. Forward- and reverse-bias tunneling effects in n/+/p silicon solar cells

    NASA Technical Reports Server (NTRS)

    Garlick, G. F. J.; Kachare, A. H.

    1980-01-01

    Excess currents due to field-assisted tunneling in both forward and reverse bias directions have been observed in n(+)-p silicon solar cells. These currents arise from the effect of conducting paths produced in the depletion layer by n(+) diffusion and cell processing. Forward-bias data indicate a small potential barrier with height of 0.04 eV at the n(+) end of conducting paths. Under reverse bias, excess tunneling currents involve a potential barrier at the p end of the conducting paths, the longer paths being associated with smaller barrier heights and dominating at the lower temperatures. Low-reverse-bias data give energy levels of 0.11 eV for lower temperatures (253-293 K) and 0.35 eV for higher temperatures (293-380 K). A model is suggested to explain the results.

  11. Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

    NASA Astrophysics Data System (ADS)

    Wiehe, Moritz; Wonsak, S.; Kuehn, S.; Parzefall, U.; Casse, G.

    2018-01-01

    The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of -32 ° C, -27 ° C and -23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2 × 1014neq /cm2 to 2 × 1016neq /cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2 × 1016neq /cm2 and compare the measurements to the parametrization models.

  12. Photonic porous silicon as a pH sensor.

    PubMed

    Pace, Stephanie; Vasani, Roshan B; Zhao, Wei; Perrier, Sébastien; Voelcker, Nicolas H

    2014-01-01

    Chronic wounds do not heal within 3 months, and during the lengthy healing process, the wound is invariably exposed to bacteria, which can colonize the wound bed and form biofilms. This alters the wound metabolism and brings about a change of pH. In this work, porous silicon photonic films were coated with the pH-responsive polymer poly(2-diethylaminoethyl acrylate). We demonstrated that the pH-responsive polymer deposited on the surface of the photonic film acts as a barrier to prevent water from penetrating inside the porous matrix at neutral pH. Moreover, the device demonstrated optical pH sensing capability visible by the unaided eye.

  13. Iridium oxide pH sensor for biomedical applications. Case urea-urease in real urine samples.

    PubMed

    Prats-Alfonso, Elisabet; Abad, Llibertat; Casañ-Pastor, Nieves; Gonzalo-Ruiz, Javier; Baldrich, Eva

    2013-01-15

    This work demonstrates the implementation of iridium oxide films (IROF) grown on silicon-based thin-film platinum microelectrodes, their utilization as a pH sensor, and their successful formatting into a urea pH sensor. In this context, Pt electrodes were fabricated on Silicon by using standard photolithography and lift-off procedures and IROF thin films were growth by a dynamic oxidation electrodeposition method (AEIROF). The AEIROF pH sensor reported showed a super-Nerstian (72.9±0.9mV/pH) response between pH 3 and 11, with residual standard deviation of both repeatability and reproducibility below 5%, and resolution of 0.03 pH units. For their application as urea pH sensors, AEIROF electrodes were reversibly modified with urease-coated magnetic microparticles (MP) using a magnet. The urea pH sensor provided fast detection of urea between 78μM and 20mM in saline solution, in sample volumes of just 50μL. The applicability to urea determination in real urine samples is discussed. Copyright © 2012 Elsevier B.V. All rights reserved.

  14. Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

    PubMed

    Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

    2016-08-24

    The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

  15. Visual Sensor for Sterilization of Polymer Fixtures Using Embedded Mesoporous Silicon Photonic Crystals.

    PubMed

    Kumeria, Tushar; Wang, Joanna; Chan, Nicole; Harris, Todd J; Sailor, Michael J

    2018-01-26

    A porous photonic crystal is integrated with a plastic medical fixture (IV connector hub) to provide a visual colorimetric sensor to indicate the presence or absence of alcohol used to sterilize the fixture. The photonic crystal is prepared in porous silicon (pSi) by electrochemical anodization of single crystal silicon, and the porosity and the stop band of the material is engineered such that the integrated device visibly changes color (green to red or blue to green) when infiltrated with alcohol. Two types of self-reporting devices are prepared and their performance compared: the first type involves heat-assisted fusion of a freestanding pSi photonic crystal to the connector end of a preformed polycarbonate hub, forming a composite where the unfilled portion of the pSi film acts as the sensor; the second involves generation of an all-polymer replica of the pSi photonic crystal by complete thermal infiltration of the pSi film and subsequent chemical dissolution of the pSi portion. Both types of sensors visibly change color when wetted with alcohol, and the color reverts to the original upon evaporation of the liquid. The sensor performance is verified using E. coli-infected samples.

  16. Photonic porous silicon as a pH sensor

    PubMed Central

    2014-01-01

    Chronic wounds do not heal within 3 months, and during the lengthy healing process, the wound is invariably exposed to bacteria, which can colonize the wound bed and form biofilms. This alters the wound metabolism and brings about a change of pH. In this work, porous silicon photonic films were coated with the pH-responsive polymer poly(2-diethylaminoethyl acrylate). We demonstrated that the pH-responsive polymer deposited on the surface of the photonic film acts as a barrier to prevent water from penetrating inside the porous matrix at neutral pH. Moreover, the device demonstrated optical pH sensing capability visible by the unaided eye. PMID:25177227

  17. Studies of silicon p-n junction solar cells. [open circuit photovoltage

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1976-01-01

    Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.

  18. Silicon-etalon fiber-optic temperature sensor

    NASA Technical Reports Server (NTRS)

    Beheim, Glenn; Fritsch, Klaus; Flatico, Joseph M.; Azar, Massood Tabib

    1989-01-01

    A temperature sensor is described which consists of a silicon etalon that is sputtered directly onto the end of an optical fiber. A two-layer protective cap structure is used to improve the sensor's long-term stability. The sensor's output is wavelength encoded to provide a high degree of immunity from cable and connector effects. This sensor is extremely compact and potentially inexpensive.

  19. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.

    PubMed

    Chu, Byung Hwan; Kang, Byoung Sam; Hung, Sheng Chun; Chen, Ke Hung; Ren, Fan; Sciullo, Andrew; Gila, Brent P; Pearton, Stephen J

    2010-01-01

    Immobilized aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) have shown great potential in the areas of pH, chloride ion, and glucose detection in exhaled breath condensate (EBC). HEMT sensors can be integrated into a wireless data transmission system that allows for remote monitoring. This technology offers the possibility of using AlGaN/GaN HEMTs for extended investigations of airway pathology of detecting glucose in EBC without the need for clinical visits. HEMT structures, consisting of a 3-microm-thick undoped GaN buffer, 30-A-thick Al(0.3)Ga(0.7)N spacer, and 220-A-thick silicon-doped Al(0.3)Ga(0.7)N cap layer, were used for fabricating the HEMT sensors. The gate area of the pH, chloride ion, and glucose detection was immobilized with scandium oxide (Sc(2)O(3)), silver chloride (AgCl) thin film, and zinc oxide (ZnO) nanorods, respectively. The Sc(2)O(3)-gated sensor could detect the pH of solutions ranging from 3 to 10 with a resolution of approximately 0.1 pH. A chloride ion detection limit of 10(-8) M was achieved with a HEMT sensor immobilized with the AgCl thin film. The drain-source current of the ZnO nanorod-gated AlGaN/GaN HEMT sensor immobilized with glucose oxidase showed a rapid response of less than 5 seconds when the sensor was exposed to the target glucose in a buffer with a pH value of 7.4. The sensor could detect a wide range of concentrations from 0.5 nM to 125 microM. There is great promise for using HEMT-based sensors to enhance the detection sensitivity for glucose detection in EBC. Depending on the immobilized material, HEMT-based sensors can be used for sensing different materials. These electronic detection approaches with rapid response and good repeatability show potential for the investigation of airway pathology. The devices can also be integrated into a wireless data transmission system for remote monitoring applications. This sensor technology could use the exhaled breath condensate to measure the

  20. Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

    PubMed Central

    Chu, Byung Hwan; Kang, Byoung Sam; Hung, Sheng Chun; Chen, Ke Hung; Ren, Fan; Sciullo, Andrew; Gila, Brent P.; Pearton, Stephen J.

    2010-01-01

    Background Immobilized aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) have shown great potential in the areas of pH, chloride ion, and glucose detection in exhaled breath condensate (EBC). HEMT sensors can be integrated into a wireless data transmission system that allows for remote monitoring. This technology offers the possibility of using AlGaN/GaN HEMTs for extended investigations of airway pathology of detecting glucose in EBC without the need for clinical visits. Methods HEMT structures, consisting of a 3-μm-thick undoped GaN buffer, 30-Å-thick Al0.3Ga0.7N spacer, and 220-Å-thick silicon-doped Al0.3Ga0.7N cap layer, were used for fabricating the HEMT sensors. The gate area of the pH, chloride ion, and glucose detection was immobilized with scandium oxide (Sc2O3), silver chloride (AgCl) thin film, and zinc oxide (ZnO) nanorods, respectively. Results The Sc2O3-gated sensor could detect the pH of solutions ranging from 3 to 10 with a resolution of ∼0.1 pH. A chloride ion detection limit of 10-8 M was achievedt with a HEMT sensor immobilized with the AgCl thin film. The drain–source current of the ZnO nanorod-gated AlGaN/GaN HEMT sensor immobilized with glucose oxidase showed a rapid response of less than 5 seconds when the sensor was exposed to the target glucose in a buffer with a pH value of 7.4. The sensor could detect a wide range of concentrations from 0.5 nM to 125 μM. Conclusion There is great promise for using HEMT-based sensors to enhance the detection sensitivity for glucose detection in EBC. Depending on the immobilized material, HEMT-based sensors can be used for sensingt different materials. These electronic detection approaches with rapid response and good repeatability show potential for the investigation of airway pathology. The devices can also be integrated into a wireless data transmission system for remote monitoring applications. This sensor technology could use the exhaled breath condensate to

  1. Radiation damage in lithium-counterdoped n/p silicon solar cells

    NASA Technical Reports Server (NTRS)

    Hermann, A. M.; Swartz, C. K.; Brandhorst, H. W., Jr.; Weinberg, I.

    1980-01-01

    Lithium counterdoped n+/p silicon solar cells were irradiated with 1 MV electrons and their post irradiation performance and low temperature annealing properties were compared to that of the 0.35 ohm cm control cells. Cells fabricated from float zone and Czochralski grown silicon were investigated. It was found that the float zone cells exhibited superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Room temperature and 60 C annealing studies were conducted. The annealing was found to be a combination of first and second order kinetics for short times. It was suggested that the principal annealing mechanism was migration of lithium to a radiation induced defect with subsequent neutralization of the defect by combination with lithium. The effects of base lithium gradient were investigated. It was found that cells with negative base lithium gradients exhibited poor radiation resistance and performance compared to those with positive or no lithium gradients; the latter being preferred for overall performance and radiation resistance.

  2. Compact silicon diffractive sensor: design, fabrication, and prototype.

    PubMed

    Maikisch, Jonathan S; Gaylord, Thomas K

    2012-07-01

    An in-plane constant-efficiency variable-diffraction-angle grating and an in-plane high-angular-selectivity grating are combined to enable a new compact silicon diffractive sensor. This sensor is fabricated in silicon-on-insulator and uses telecommunications wavelengths. A single sensor element has a micron-scale device size and uses intensity-based (as opposed to spectral-based) detection for increased integrability. In-plane diffraction gratings provide an intrinsic splitting mechanism to enable a two-dimensional sensor array. Detection of the relative values of diffracted and transmitted intensities is independent of attenuation and is thus robust. The sensor prototype measures refractive index changes of 10(-4). Simulations indicate that this sensor configuration may be capable of measuring refractive index changes three or four orders of magnitude smaller. The characteristics of this sensor type make it promising for lab-on-a-chip applications.

  3. Silicon on silicon dioxide slot waveguide evanescent field gas absorption sensor

    NASA Astrophysics Data System (ADS)

    Butt, M. A.; Khonina, S. N.; Kazanskiy, N. L.

    2018-01-01

    Several trace gases such as H2O, CO, CO2, NO, N2O, NO2 and CH4 strongly absorb in the mid-IR spectral region due to their fundamental rotational and vibrational transitions. In this work, we propose an evanescent field absorption gas sensor based on silicon/silicon dioxide slot waveguide at 3.39 μm for sensing of methane gas. These waveguides can provide the highest evanescent field ratio (EFR) > 47% with adequate dimensions. Higher EFR values often come at an expense of higher propagation losses. These waveguides have relatively higher losses as compared to conventional waveguides, such as rib and slab waveguides, as these fundamental losses are static and the proposed sensing mechanism is established on the incremental loss due to the absorption of the gas. Therefore, incident power can always be incremented to compensate the waveguide losses.

  4. Hybrid method of making an amorphous silicon P-I-N semiconductor device

    DOEpatents

    Moustakas, Theodore D.; Morel, Don L.; Abeles, Benjamin

    1983-10-04

    The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

  5. Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

    NASA Astrophysics Data System (ADS)

    Savic, N.; Beyer, J.; La Rosa, A.; Macchiolo, A.; Nisius, R.

    2016-12-01

    In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023-2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more radiation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 μm recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of these modules is investigated at beam tests and the results on edge efficiency will be shown.

  6. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2004-12-07

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  7. Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2005-08-23

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  8. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2003-01-01

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  9. Performance study of double SOI image sensors

    NASA Astrophysics Data System (ADS)

    Miyoshi, T.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Hara, K.; Ikegami, Y.; Kurachi, I.; Nishimura, R.; Ono, S.; Tauchi, K.; Tsuboyama, T.; Yamada, M.

    2018-02-01

    Double silicon-on-insulator (DSOI) sensors composed of two thin silicon layers and one thick silicon layer have been developed since 2011. The thick substrate consists of high resistivity silicon with p-n junctions while the thin layers are used as SOI-CMOS circuitry and as shielding to reduce the back-gate effect and crosstalk between the sensor and the circuitry. In 2014, a high-resolution integration-type pixel sensor, INTPIX8, was developed based on the DSOI concept. This device is fabricated using a Czochralski p-type (Cz-p) substrate in contrast to a single SOI (SSOI) device having a single thin silicon layer and a Float Zone p-type (FZ-p) substrate. In the present work, X-ray spectra of both DSOI and SSOI sensors were obtained using an Am-241 radiation source at four gain settings. The gain of the DSOI sensor was found to be approximately three times that of the SSOI device because the coupling capacitance is reduced by the DSOI structure. An X-ray imaging demonstration was also performed and high spatial resolution X-ray images were obtained.

  10. The Novel Preparation of P-N Junction Mesa Diodes by Silicon-Wafer Direct Bonding (SDB)

    NASA Astrophysics Data System (ADS)

    Yeh, Ching-Fa; Hwangleu, Shyang

    1992-05-01

    The key processes of silicon-wafer direct bonding (SDB), including hydrophilic surface formation and optimal two-step heat treatment, have been developed However, H2SO4/H2O2 solution being a strong oxidized acid solution, native oxide is found to have grown on the wafer surface as soon as a wafer is treated in this solution. In the case of a wafer further treated in diluted HF solution after hydrophilic surface formation, it is shown that the wafer surface can not only be cleaned of its native oxide but also remains hydrophilic, and can provide excellent voidless bonding. The N+/P and N/P combination junction mesa diodes fabricated on the wafers prepared by these novel SDB technologies are examined. The ideality factor n of the N/P mesa diode is 2.4˜2.8 for the voltage range 0.2˜0.3 V; hence, the lowering of the ideality factor n is evidently achieved. As for the N+/P mesa diode, the ideality factor n shows a value of 1.10˜1.30 for the voltage range 0.2˜0.6 V; the low value of n is attributed to an autodoping phenomenon which has caused the junction interface to form in the P-silicon bulk. However, the fact that the sustaining voltage of the N/P mesa diode showed a value greater than 520 V reveals the effectiveness of our novel SDB processes.

  11. Silicon micromechanical sensors model of piezoresistivity

    NASA Astrophysics Data System (ADS)

    Lysko, Jan M.

    2001-08-01

    Application of the piezo resistivity model to estimate valence and conduction bands shifts induced by the mechanical stress is presented. Parameters of the silicon pressure and acceleration sensor, which are under development in the ITE, Warsaw, were used. Geometrical and technological data were used in calculations of the silicon energy band structure and longitudinal coefficient of the piezo resistivity.(pi) L.

  12. High temperature and frequency pressure sensor based on silicon-on-insulator layers

    NASA Astrophysics Data System (ADS)

    Zhao, Y. L.; Zhao, L. B.; Jiang, Z. D.

    2006-03-01

    Based on silicon on insulator (SOI) technology, a novel high temperature pressure sensor with high frequency response is designed and fabricated, in which a buried silicon dioxide layer in the silicon material is developed by the separation by implantation of oxygen (SIMOX) technology. This layer can isolate leak currents between the top silicon layer for the detecting circuit and body silicon at a temperature of about 200 °C. In addition, the technology of silicon and glass bonding is used to create a package of the sensor without internal strain. A structural model and test data from the sensor are presented. The experimental results showed that this kind of sensor possesses good static performance in a high temperature environment and high frequency dynamic characteristics, which may satisfy the pressure measurement demands of the oil industry, aviation and space, and so on.

  13. Optical network of silicon micromachined sensors

    NASA Astrophysics Data System (ADS)

    Wilson, Mark L.; Burns, David W.; Zook, J. David

    1996-03-01

    The Honeywell Technology Center, in collaboration with the University of Wisconsin and the Mobil Corporation, and under funding from this ARPA sponsored program, are developing a new type of `hybrid' micromachined silicon/fiber optic sensor that utilizes the best attributes of each technology. Fiber optics provide a noise free method to read out the sensor without electrical power required at the measurement point. Micromachined silicon sensor techniques provide a method to design many different types of sensors such as temperature, pressure, acceleration, or magnetic field strength and report the sensor data using FDM methods. Our polysilicon resonant microbeam structures have a built in Fabry-Perot interferometer that offers significant advantages over other configurations described in the literature. Because the interferometer is an integral part of the structure, the placement of the fiber becomes non- critical, and packaging issues become considerably simpler. The interferometer spacing are determined by the thin-film fabrication processes and therefore can be extremely well controlled. The main advantage, however, is the integral vacuum cavity that ensures high Q values. Testing results have demonstrated relaxed alignment tolerances in packaging these devices, with an excellent Signal to Noise Ratio. Networks of 16 or more sensors are currently being developed. STORM (Strain Transduction by Optomechanical Resonant Microbeams) sensors can also provide functionality and self calibration information which can be used to improve the overall system reliability. Details of the sensor and network design, as well as test results, are presented.

  14. The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Fossum, J. G.; Lindholm, F. A.; Shibib, M. A.

    1979-01-01

    Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

  15. The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

    NASA Technical Reports Server (NTRS)

    Liu, Chung-Chiun

    1994-01-01

    Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

  16. Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gjersdal, H.; /Oslo U.; Bolle, E.

    2012-05-07

    A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 {micro}m long pixel side, this resulting in a p-n inter-electrode distance of {approx} 71 {micro}m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, chargemore » sharing and tracking efficiency data were collected at zero and 15{sup o} angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.« less

  17. Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

    NASA Technical Reports Server (NTRS)

    Stupica, John; Goradia, Chandra; Swartz, Clifford K.; Weinberg, Irving

    1987-01-01

    Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

  18. High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

    PubMed Central

    Dhyani, Veerendra; Das, Samaresh

    2017-01-01

    Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere. PMID:28281652

  19. Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.

    PubMed

    Kiaee, Zohreh; Joo, Seung Ki

    2018-03-01

    The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.

  20. Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

    NASA Technical Reports Server (NTRS)

    Beheim, Glenn M.

    2003-01-01

    The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were

  1. Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography.

    PubMed

    Lim, Cheol-Min; Lee, In-Kyu; Lee, Ki Joong; Oh, Young Kyoung; Shin, Yong-Beom; Cho, Won-Ju

    2017-01-01

    This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

  2. Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Lim, Cheol-Min; Lee, In-Kyu; Lee, Ki Joong; Oh, Young Kyoung; Shin, Yong-Beom; Cho, Won-Ju

    2017-12-01

    This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

  3. High precision silicon piezo resistive SMART pressure sensor

    NASA Astrophysics Data System (ADS)

    Brown, Rod

    2005-01-01

    Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure `module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the `in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures.

  4. Detection of nitroaromatics in the solid, solution, and vapor phases using silicon quantum dot sensors

    NASA Astrophysics Data System (ADS)

    Nguyen, An; Gonzalez, Christina M.; Sinelnikov, Regina; Newman, W.; Sun, Sarah; Lockwood, Ross; Veinot, Jonathan G. C.; Meldrum, Al

    2016-03-01

    Silicon quantum dots (Si-QDs) represent a well-known QD fluorophore that can emit throughout the visible spectrum depending on the interface structure and surface functional group. Detection of nitroaromatic compounds by monitoring the luminescence response of the sensor material (typically fluorescent polymers) currently forms the basis of new explosives sensing technologies. Freestanding silicon QDs may represent a benign alternative with a high degree of chemical and physical versatility. Here, we investigate dodecyl and amine-terminated Si-QD luminescence response to the presence of nitrobenzene and dinitrotoluene (DNT) in various solid, solution, and vapor forms. For dinitrotoluene vapor the 3σ detection limit was 6 ppb for monomer-terminated QDs. For nitroaromatics dissolved in toluene the detection limit was on the order of 400 nM, corresponding to ∼100 pg of material distributed over ∼1 cm2 on the sensor surface. Solid traces of nitroaromatics were also easily detectable via a simple ‘touch test’. The samples showed minimal interference effects from common contaminants such as water, ethanol, and acetonitrile. The sensor can be as simple and inexpensive as a small circle of filter paper dipped into a QD solution, with a single vial of QDs able to make hundreds of these sensors. Additionally, a trial fiber-optic sensor device was tested by applying the QDs to one end of a 2 × 2 fiber coupler and exposing them to controlled DNT vapor. Finally, the quenching mechanism was explored via luminescence dynamics measurements and is different for blue (amine) and red (dodecyl) fluorescent silicon QDs.

  5. Fish-bone-structured acoustic sensor toward silicon cochlear systems

    NASA Astrophysics Data System (ADS)

    Harada, Muneo; Ikeuchi, Naoki; Fukui, Shoichi; Ando, Shigeru

    1998-09-01

    This paper describes a micro mechanical acoustic sensor modeling the basilar membrane of the human cochlea. The skeleton of the acoustic sensor is an array of resonators each of specific frequency selectivity. The mechanical structure of the sensor is designed using FEM analysis to have a particular geometrical structure looking like a fish bone that consists of cantilever ribs extending out from a backbone. Acoustic wave is supposed to be introduced to the diaphragm placed at one end of the backbone to travel in one way along the backbone. During traveling each frequency component of the wave is delivered to the corresponding cantilever according to its resonant frequency. The mechanical vibrations of each cantilever are detected in parallel by use of piezoresistors. The fish-bone structure is fabricated to be suspended in the air on a silicon substrate using silicon micromachining technology. We observe the frequency response of each cantilever to verify fairly sharp frequency selectivity associated with the one- way flow of the vibration energy. The present results encourage us to implement the human auditory system on a silicon chip toward the goal of silicon cochlea.

  6. Porous Silicon Nanowires

    PubMed Central

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  7. A silicon micromachined resonant pressure sensor

    NASA Astrophysics Data System (ADS)

    Tang, Zhangyang; Fan, Shangchun; Cai, Chenguang

    2009-09-01

    This paper describes the design, fabrication and test of a silicon micromachined resonant pressure sensor. A square membrane and a doubly clamped resonant beam constitute a compound structure. The former senses the pressure directly, while the latter changes its resonant frequency according to deformation of the membrane. The final output relation between the resonant frequency and the applied pressure is deducted according to the structure mechanical properties. Sensors are fabricated by micromachining technology, and then sealed in vaccum. These sensors are tested by open-loop and close-loop system designed on purpose. The experiment results demonstrate that the sensor has a sensitivity of 49.8Hz/kPa and repeatability of 0.08%.

  8. Sensor assembly method using silicon interposer with trenches for three-dimensional binocular range sensors

    NASA Astrophysics Data System (ADS)

    Nakajima, Kazuhiro; Yamamoto, Yuji; Arima, Yutaka

    2018-04-01

    To easily assemble a three-dimensional binocular range sensor, we devised an alignment method for two image sensors using a silicon interposer with trenches. The trenches were formed using deep reactive ion etching (RIE) equipment. We produced a three-dimensional (3D) range sensor using the method and experimentally confirmed that sufficient alignment accuracy was realized. It was confirmed that the alignment accuracy of the two image sensors when using the proposed method is more than twice that of the alignment assembly method on a conventional board. In addition, as a result of evaluating the deterioration of the detection performance caused by the alignment accuracy, it was confirmed that the vertical deviation between the corresponding pixels in the two image sensors is substantially proportional to the decrease in detection performance. Therefore, we confirmed that the proposed method can realize more than twice the detection performance of the conventional method. Through these evaluations, the effectiveness of the 3D binocular range sensor aligned by the silicon interposer with the trenches was confirmed.

  9. Piezoresistive silicon pressure sensors in cryogenic environment

    NASA Technical Reports Server (NTRS)

    Kahng, Seun K.; Chapman, John J.

    1989-01-01

    This paper presents data on low-temperature measurements of silicon pressure sensors. It was found that both the piezoresistance coefficients and the charge-carrier mobility increase with decreasing temperature. For lightly doped semiconductor materials, the density of free charge carriers decreases with temperature and can freeze out eventually. However, the effect of carrier freeze-out can be minimized by increasing the impurity content to higher levels, at which the temperature dependency of piezoresistance coefficients is reduced. An impurity density of 1 x 10 to the 19th/cu cm was found to be optimal for cryogenic applications of pressure sensor dies.

  10. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  11. Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors

    NASA Astrophysics Data System (ADS)

    Gasparyan, Ferdinand; Zadorozhnyi, Ihor; Khondkaryan, Hrant; Arakelyan, Armen; Vitusevich, Svetlana

    2018-03-01

    Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current-voltage (I-V) characterization. The static I-V dependencies demonstrate the high quality of fabricated silicon FETs without leakage current. Transport and noise properties of NW FET structures were investigated under different light illumination conditions, as well as in sensor configuration in an aqueous solution with different pH values. Furthermore, we studied channel length effects on the photoconductivity, noise, and pH sensitivity. The magnitude of the channel current is approximately inversely proportional to the length of the current channel, and the pH sensitivity increases with the increase of channel length approaching the Nernst limit value of 59.5 mV/pH. We demonstrate that dominant 1/f-noise can be screened by the generation-recombination plateau at certain pH of the solution or external optical excitation. The characteristic frequency of the generation-recombination noise component decreases with increasing of illumination power. Moreover, it is shown that the measured value of the slope of 1/f-noise spectral density dependence on the current channel length is 2.7 which is close to the theoretically predicted value of 3.

  12. Silicon Field Effect Transistors as Dual-Use Sensor-Heater Hybrids

    PubMed Central

    Reddy, Bobby; Elibol, Oguz H.; Nair, Pradeep R.; Dorvel, Brian R.; Butler, Felice; Ahsan, Zahab; Bergstrom, Donald E.; Alam, Muhammad A.; Bashir, Rashid

    2011-01-01

    We demonstrate the temperature mediated applications of a previously proposed novel localized dielectric heating method on the surface of dual purpose silicon field effect transistor (FET) sensor-heaters and perform modeling and characterization of the underlying mechanisms. The FETs are first shown to operate as electrical sensors via sensitivity to changes in pH in ionic fluids. The same devices are then demonstrated as highly localized heaters via investigation of experimental heating profiles and comparison to simulation results. These results offer further insight into the heating mechanism and help determine the spatial resolution of the technique. Two important biosensor platform applications spanning different temperature ranges are then demonstrated: a localized heat-mediated DNA exchange reaction and a method for dense selective functionalization of probe molecules via the heat catalyzed complete desorption and reattachment of chemical functionalization to the transistor surfaces. Our results show that the use of silicon transistors can be extended beyond electrical switching and field-effect sensing to performing localized temperature controlled chemical reactions on the transistor itself. PMID:21214189

  13. Dead layer on silicon p-i-n diode charged-particle detectors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wall, B. L.; Amsbaugh, John F.; Beglarian, A.

    Abstract Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrinomass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra tomore » the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by discussion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.« less

  14. Silicon Nanowire Field Effect Transistor Sensors with Minimal Sensor to Sensor Variations and Enhanced Sensing Characteristics.

    PubMed

    Zafar, Sufi; D'Emic, Christopher; Jagtiani, Ashish; Kratschmer, Ernst; Miao, Xin; Zhu, Yu; Mo, Renee; Sosa, Norma; Hamann, Hendrik F; Shahidi, Ghavam; Riel, Heike

    2018-06-22

    Silicon nanowire field effect transistor (FET) sensors have demonstrated their ability for rapid and label free detection of proteins, nucleotide sequences, and viruses at ultralow concentrations with the potential to be a transformative diagnostic technology. Their nanoscale size gives them their unique ultralow detection ability but also makes their fabrication challenging with large sensor to sensor variations, thus limiting their commercial applications. In this work, a combined approach of nanofabrication, device simulation, materials and electrical characterization is applied towards identifying and improving fabrication steps that induce sensor to sensor variations. An enhanced complementary metal-oxide-semiconductor (CMOS) compatible process for fabricating silicon nanowire FET sensors is demonstrated. Nanowire (30 nm width) FETs with aqueous solution as gates are shown to have the Nernst limit sub-threshold swing SS = 60 mV/decade with ~1.7% variations, whereas literature values for SS are ≥ 80 mV/decade with larger (>10 times) variations. Also, their threshold voltage variations are significantly (~3 times) reduced, compared to literature values. Furthermore, these improved FETs have significantly reduced drain current hysteresis (~0.6 mV) and enhanced on-current to off-current ratios (~10 6 ). These improvements resulted in nanowire FET sensors with lowest (~3%) reported sensor to sensor variations, compared to literature studies. Also, these improved nanowire sensors have the highest reported sensitivity and enhanced signal to noise ratio with the lowest reported defect density of 1x10 18 eV -1 cm -3 in comparison to literature data. In summary, this work brings the nanowire sensor technology a step closer to commercial products for early diagnosis and monitoring of diseases.

  15. Influence of the transition region between p- and n-type polycrystalline silicon passivating contacts on the performance of interdigitated back contact silicon solar cells

    NASA Astrophysics Data System (ADS)

    Reichel, Christian; Müller, Ralph; Feldmann, Frank; Richter, Armin; Hermle, Martin; Glunz, Stefan W.

    2017-11-01

    Passivating contacts based on thin tunneling oxides (SiOx) and n- and p-type semi-crystalline or polycrystalline silicon (poly-Si) enable high passivation quality and low contact resistivity, but the integration of these p+/n emitter and n+/n back surface field junctions into interdigitated back contact silicon solar cells poses a challenge due to high recombination at the transition region from p-type to n-type poly-Si. Here, the transition region was created in different configurations—(a) p+ and n+ poly-Si regions are in direct contact with each other ("pn-junction"), using a local overcompensation (counterdoping) as a self-aligning process, (b) undoped (intrinsic) poly-Si remains between the p+ and n+ poly-Si regions ("pin-junction"), and (c) etched trenches separate the p+ and n+ poly-Si regions ("trench")—in order to investigate the recombination characteristics and the reverse breakdown behavior of these solar cells. Illumination- and injection-dependent quasi-steady state photoluminescence (suns-PL) and open-circuit voltage (suns-Voc) measurements revealed that non-ideal recombination in the space charge regions with high local ideality factors as well as recombination in shunted regions strongly limited the performance of solar cells without a trench. In contrast, solar cells with a trench allowed for open-circuit voltage (Voc) of 720 mV, fill factor of 79.6%, short-circuit current (Jsc) of 41.3 mA/cm2, and a conversion efficiencies (η) of 23.7%, showing that a lowly conducting and highly passivating intermediate layer between the p+ and n+ poly-Si regions is mandatory. Independent of the configuration, no hysteresis was observed upon multiple stresses in reverse direction, indicating a controlled and homogeneously distributed breakdown, but with different breakdown characteristics.

  16. Development of Hybrid pH sensor for long-term seawater pH monitoring.

    NASA Astrophysics Data System (ADS)

    Nakano, Y.; Egashira, T.; Miwa, T.; Kimoto, H.

    2016-02-01

    We have been developing the in situ pH sensor (Hybrid pH sensor: HpHS) for the long-term seawater pH monitoring. We are planning to provide the HpHS for researchers and environmental consultants for observation of the CCS (Carbon dioxide Capture and Storage) monitoring system, the coastal environment monitoring system (e.g. Blue Carbon) and ocean acidification. The HpHS has two types of pH sensors (i.e. potentiometric pH sensor and spectrophotometric pH sensor). The spectrophotometric pH sensor can measure pH correctly and stably, however it needs large power consumption and a lot of reagents in a long period of observation. The pH sensor used m-cresol purple (mCP) as an indicator of pH (Clayton and Byrne, 1993 and Liu et al., 2011). We can choose both coefficients before deployment. On the other hand, although the potentiometric pH sensor is low power consumption and high-speed response (within 10 seconds), drifts in the pH of the potentiometric measurements may possibly occur for a long-term observation. The HpHS can measure in situ pH correctly and stably combining advantage of both pH sensors. The HpHS consists of an aluminum pressure housing with optical cell (main unit) and an aluminum silicon-oil filled, pressure-compensated vessel containing pumps and valves (diaphragm pump and valve unit) and pressure-compensated reagents bags (pH indicator, pure water and Tris buffer or certified reference material: CRM) with an ability to resist water pressure to 3000m depth. The main unit holds system control boards, pump drivers, data storage (micro SD card), LED right source, photodiode, optical cell and pressure proof windows. The HpHS also has an aluminum pressure housing that holds a rechargeable lithium-ion battery or a lithium battery for the power supply (DC 24 V). The HpHS is correcting the value of the potentiometric pH sensor (measuring frequently) by the value of the spectrophotometric pH sensor (measuring less frequently). It is possible to calibrate in

  17. Fiber-pigtailed silicon photonic sensors for methane leak detection

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Teng, Chu; Xiong, Chi; Zhang, Eric

    We present comprehensive characterization of silicon photonic sensors for methane leak detection. Sensitivity of 40 ppmv after 1 second integration is reported. Fourier domain characterization of on-chip etalon drifts is used for further sensor improvement.

  18. Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

    NASA Astrophysics Data System (ADS)

    Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

    2018-04-01

    For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

  19. Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor.

    PubMed

    Caroselli, Raffaele; Martín Sánchez, David; Ponce Alcántara, Salvador; Prats Quilez, Francisco; Torrijos Morán, Luis; García-Rupérez, Jaime

    2017-12-05

    Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU), which allowed us to directly detect refractive index variations in the 10 -7 RIU range.

  20. Piezoresistive Composite Silicon Dioxide Nanocantilever Surface Stress Sensor: Design and Optimization.

    PubMed

    Mathew, Ribu; Sankar, A Ravi

    2018-05-01

    In this paper, we present the design and optimization of a rectangular piezoresistive composite silicon dioxide nanocantilever sensor. Unlike the conventional design approach, we perform the sensor optimization by not only considering its electro-mechanical response but also incorporating the impact of self-heating induced thermal drift in its terminal characteristics. Through extensive simulations first we comprehend and quantify the inaccuracies due to self-heating effect induced by the geometrical and intrinsic parameters of the piezoresistor. Then, by optimizing the ratio of electrical sensitivity to thermal sensitivity defined as the sensitivity ratio (υ) we improve the sensor performance and measurement reliability. Results show that to ensure υ ≥ 1, shorter and wider piezoresistors are better. In addition, it is observed that unlike the general belief that high doping concentration of piezoresistor reduces thermal sensitivity in piezoresistive sensors, to ensure υ ≥ 1 doping concentration (p) should be in the range: 1E18 cm-3 ≤ p ≤ 1E19 cm-3. Finally, we provide a set of design guidelines that will help NEMS engineers to optimize the performance of such sensors for chemical and biological sensing applications.

  1. Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.

    PubMed

    Fegadolli, William S; Kim, Se-Heon; Postigo, Pablo Aitor; Scherer, Axel

    2013-11-15

    We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon photonics.

  2. Design of air blast pressure sensors based on miniature silicon membrane and piezoresistive gauges

    NASA Astrophysics Data System (ADS)

    Riondet, J.; Coustou, A.; Aubert, H.; Pons, P.; Lavayssière, M.; Luc, J.; Lefrançois, A.

    2017-11-01

    Available commercial piezoelectric pressure sensors are not able to accurately reproduce the ultra-fast transient pressure occurring during an air blast experiment. In this communication a new pressure sensor prototype based on a miniature silicon membrane and piezoresistive gauges is reported for significantly improving the performances in terms of time response. Simulation results demonstrate the feasibility of a pressure transducer having a fundamental resonant frequency almost ten times greater than the commercial piezoelectric sensors one. The sensor uses a 5μm-thick SOI membrane and four P-type silicon gauges (doping level ≅ 1019 at/cm3) in Wheatstone bridge configuration. To obtain a good trade-off between the fundamental mechanical resonant frequency and pressure sensitivity values, the typical dimension of the rectangular membrane is fixed to 30μm x 90μm with gauge dimension of 1μm x 5μm. The achieved simulated mechanical resonant frequency of these configuration is greater than 40MHz with a sensitivity of 0.04% per bar.

  3. Development of n+-in-p planar pixel sensors for extremely high radiation environments, designed to retain high efficiency after irradiation

    NASA Astrophysics Data System (ADS)

    Unno, Y.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Hanagaki, K.; Yajima, K.; Yamauchi, Y.; Hirose, M.; Homma, Y.; Jinnouchi, O.; Kimura, K.; Motohashi, K.; Sato, S.; Sawai, H.; Todome, K.; Yamaguchi, D.; Hara, K.; Sato, Kz.; Sato, Kj.; Hagihara, M.; Iwabuchi, S.

    2016-09-01

    We have developed n+-in-p pixel sensors to obtain highly radiation tolerant sensors for extremely high radiation environments such as those found at the high-luminosity LHC. We have designed novel pixel structures to eliminate the sources of efficiency loss under the bias rails after irradiation by removing the bias rail out of the boundary region and routing the bias resistors inside the area of the pixel electrodes. After irradiation by protons with the fluence of approximately 3 ×1015neq /cm2, the pixel structure with the polysilicon bias resistor and the bias rails removed far away from the boundary shows an efficiency loss of < 0.5 % per pixel at the boundary region, which is as efficient as the pixel structure without a biasing structure. The pixel structure with the bias rails at the boundary and the widened p-stop's underneath the bias rail also exhibits an improved loss of approximately 1% per pixel at the boundary region. We have elucidated the physical mechanisms behind the efficiency loss under the bias rail with TCAD simulations. The efficiency loss is due to the interplay of the bias rail acting as a charge collecting electrode with the region of low electric field in the silicon near the surface at the boundary. The region acts as a "shield" for the electrode. After irradiation, the strong applied electric field nearly eliminates the region. The TCAD simulations have shown that wide p-stop and large Si-SiO2 interface charge (inversion layer, specifically) act to shield the weighting potential. The pixel sensor of the old design irradiated by γ-rays at 2.4 MGy is confirmed to exhibit only a slight efficiency loss at the boundary.

  4. The mid-IR silicon photonics sensor platform (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

    2017-02-01

    Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in

  5. Collected charge of planar silicon detectors after pion and proton irradiations up to 2.2 ×10 16 n eq cm -2

    NASA Astrophysics Data System (ADS)

    Affolder, Anthony; Allport, Phil; Casse, Gianluigi

    2010-11-01

    The planned luminosity upgrade of the Large Hadron Collider at CERN (Super-LHC) will provide a challenging environment for the tracking and vertexing detector systems. Planar, segmented silicon detectors are one of the few radiation tolerant technologies under consideration for use for the Super-LHC tracking detectors in either pixel or strip geometries. In this paper, charge collection measurements are made with planar silicon sensors with 2 different substrate materials (float zone and magnetic Czochralski) and 3 different diode configurations (p+ strip in n-bulk, n+ strip in n-bulk, and n+ strip in p-bulk). For the first time, a comparison of the charge collection of these devices will be made after irradiation up to 6 ×1014 neq cm-2 with 280 MeV charged pions, and up to 2.2 ×1016 neq cm-2 with 26 MeV protons. This study covers the expected range of final fluences for the different layers of pixel and microstrip sensors of the ATLAS and CMS experiments at the Super-LHC. These measurements have been carried out using analogue, high-speed (40 MHz) electronics and a Strontium-90 beta source.

  6. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  7. Silicon-Etalon Fiber-Optic Temperature Sensor

    NASA Technical Reports Server (NTRS)

    Beheim, Glenn; Fritsch, Klaus; Flatico, Joseph M.; Azar, Massood Tabib

    1993-01-01

    Developmental temperature sensor consists of silicon Fabry-Perot etalon attached to end of optical fiber. Features immunity to electrical interference, small size, light weight, safety, and chemical inertness. Output encoded in ration of intensities at two different wavelengths, rather than in overall intensity, with result that temperature readings not degraded much by changes in transmittance of fiber-optic link.

  8. Optical Addressing Electronic Tongue Based on Low Selective Photovoltaic Transducer with Nanoporous Silicon Layer

    NASA Astrophysics Data System (ADS)

    Litvinenko, S. V.; Bielobrov, D. O.; Lysenko, V.; Skryshevsky, V. A.

    2016-08-01

    The electronic tongue based on the array of low selective photovoltaic (PV) sensors and principal component analysis is proposed for detection of various alcohol solutions. A sensor array is created at the forming of p-n junction on silicon wafer with porous silicon layer on the opposite side. A dynamical set of sensors is formed due to the inhomogeneous distribution of the surface recombination rate at this porous silicon side. The sensitive to molecular adsorption photocurrent is induced at the scanning of this side by laser beam. Water, ethanol, iso-propanol, and their mixtures were selected for testing. It is shown that the use of the random dispersion of surface recombination rates on different spots of the rear side of p-n junction and principal component analysis of PV signals allows identifying mentioned liquid substances and their mixtures.

  9. Harsh Environment Silicon Carbide Sensor Technology for Geothermal Instrumentation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pisano, Albert P.

    2013-04-26

    This project utilizes Silicon Carbide (SiC) materials platform to fabricate advanced sensors to be used as high-temperature downhole instrumentation for the DOE’s Geothermal Technologies Program on Enhanced Geothermal Systems. The scope of the proposed research is to 1) develop a SiC pressure sensor that can operate in harsh supercritical conditions, 2) develop a SiC temperature sensor that can operate in harsh supercritical conditions, 3) develop a bonding process for adhering SiC sensor die to well casing couplers, and 4) perform experimental exposure testing of sensor materials and the sensor devices.

  10. Characterization and modelling of the boron-oxygen defect activation in compensated n-type silicon

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schön, J.; Niewelt, T.; Broisch, J.

    2015-12-28

    A study of the activation of the light-induced degradation in compensated n-type Czochralski grown silicon is presented. A kinetic model is established that verifies the existence of both the fast and the slow components known from p-type and proves the quadratic dependence of the defect generation rates of both defects on the hole concentration. The model allows for the description of lifetime degradation kinetics in compensated n-type silicon under various intensities and is in accordance with the findings for p-type silicon. We found that the final concentrations of the slow defect component in compensated n-type silicon only depend on themore » interstitial oxygen concentration and on neither the boron concentration nor the equilibrium electron concentration n{sub 0}. The final concentrations of the fast defect component slightly increase with increasing boron concentration. The results on n-type silicon give new insight to the origin of the BO defect and question the existing models for the defect composition.« less

  11. Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures

    NASA Astrophysics Data System (ADS)

    Volkov, N. V.; Tarasov, A. S.; Rautskii, M. V.; Lukyanenko, A. V.; Bondarev, I. A.; Varnakov, S. N.; Ovchinnikov, S. G.

    2018-04-01

    Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.

  12. New electron trap in p-type Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

    1984-01-01

    A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

  13. Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

    NASA Technical Reports Server (NTRS)

    Garlick, G. F. J.; Kachare, A. H.

    1981-01-01

    Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

  14. A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

    NASA Technical Reports Server (NTRS)

    Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

    1980-01-01

    Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

  15. Application of CMOS Technology to Silicon Photomultiplier Sensors.

    PubMed

    D'Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

    2017-09-25

    We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments.

  16. Silicon Nanotips Antireflection Surface for Micro Sun Sensor

    NASA Technical Reports Server (NTRS)

    Bae, Sam Y.; Lee, Choonsup; Mobasser, Sohrab; Manohara, Harish

    2006-01-01

    We have developed a new technique to fabricate antireflection surface using silicon nano-tips for use on a micro sun sensor for Mars rovers. We have achieved randomly distributed nano-tips of radius spanning from 20 nm to 100 nm and aspect ratio of 200 using a two-step dry etching process. The 30(deg) specular reflectance at the target wavelength of 1 (mu)m is only about 0.09 %, nearly three orders of magnitude lower than that of bare silicon, and the hemispherical reflectance is 8%. By changing the density and aspect ratio of these nanotips, the change in reflectance is demonstrated. Using surfaces covered with these nano-tips, the critical problem of ghost images that are caused by multiple internal reflections in a micro sun sensor was solved.

  17. A wearable strain sensor based on a carbonized nano-sponge/silicone composite for human motion detection.

    PubMed

    Yu, Xiao-Guang; Li, Yuan-Qing; Zhu, Wei-Bin; Huang, Pei; Wang, Tong-Tong; Hu, Ning; Fu, Shao-Yun

    2017-05-25

    Melamine sponge, also known as nano-sponge, is widely used as an abrasive cleaner in our daily life. In this work, the fabrication of a wearable strain sensor for human motion detection is first demonstrated with a commercially available nano-sponge as a starting material. The key resistance sensitive material in the wearable strain sensor is obtained by the encapsulation of a carbonized nano-sponge (CNS) with silicone resin. The as-fabricated CNS/silicone sensor is highly sensitive to strain with a maximum gauge factor of 18.42. In addition, the CNS/silicone sensor exhibits a fast and reliable response to various cyclic loading within a strain range of 0-15% and a loading frequency range of 0.01-1 Hz. Finally, the CNS/silicone sensor as a wearable device for human motion detection including joint motion, eye blinking, blood pulse and breathing is demonstrated by attaching the sensor to the corresponding parts of the human body. In consideration of the simple fabrication technique, low material cost and excellent strain sensing performance, the CNS/silicone sensor is believed to have great potential in the next-generation of wearable devices for human motion detection.

  18. Porous Silicon Structures as Optical Gas Sensors.

    PubMed

    Levitsky, Igor A

    2015-08-14

    We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi) and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers) are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

  19. Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface.

    PubMed

    Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

    2011-10-07

    Silicon nanowire field effect transistor sensors with SiO(2)/HfO(2) as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO(2) as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

  20. Optimized sensitivity of Silicon-on-Insulator (SOI) strip waveguide resonator sensor

    PubMed Central

    TalebiFard, Sahba; Schmidt, Shon; Shi, Wei; Wu, WenXuan; Jaeger, Nicolas A. F.; Kwok, Ezra; Ratner, Daniel M.; Chrostowski, Lukas

    2017-01-01

    Evanescent field sensors have shown promise for biological sensing applications. In particular, Silicon-on-Insulator (SOI)-nano-photonic based resonator sensors have many advantages for lab-on-chip diagnostics, including high sensitivity for molecular detection and compatibility with CMOS foundries for high volume manufacturing. We have investigated the optimum design parameters within the fabrication constraints of Multi-Project Wafer (MPW) foundries that result in the highest sensitivity for a resonator sensor. We have demonstrated the optimum waveguide thickness needed to achieve the maximum bulk sensitivity with SOI-based resonator sensors to be 165 nm using the quasi-TM guided mode. The closest thickness offered by MPW foundry services is 150 nm. Therefore, resonators with 150 nm thick silicon waveguides were fabricated resulting in sensitivities as high as 270 nm/RIU, whereas a similar resonator sensor with a 220 nm thick waveguide demonstrated sensitivities of approximately 200 nm/RIU. PMID:28270963

  1. Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

    DOE PAGES

    Adam, W.; Bergauer, T.; Brondolin, E.; ...

    2017-08-22

    The high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment’s silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up tomore » $$\\Phi _{eq} = 2 \\times 10^{16}$$  cm$$^{-2}$$ , and an ionising dose of $${\\approx } 5$$  MGy after an integrated luminosity of 3000 fb$$^{-1}$$ . Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. Here in this article, the results obtained from the characterisation of 100 and 200 μm thick p-bulk pad diodes and strip sensors irradiated up to fluences of $$\\Phi _{eq} = 1.3 \\times 10^{16}$$  cm$$^{-2}$$ are shown.« less

  2. Application of CMOS Technology to Silicon Photomultiplier Sensors

    PubMed Central

    D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

    2017-01-01

    We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

  3. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

    NASA Technical Reports Server (NTRS)

    Hurley, John S.

    1990-01-01

    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

  4. Microfabrication of Silicon/Ceramic Hybrid Cantilever for Scanning Probe Microscope and Sensor Applications

    NASA Astrophysics Data System (ADS)

    Wakayama, Takayuki; Kobayashi, Toshinari; Iwata, Nobuya; Tanifuji, Nozomi; Matsuda, Yasuaki; Yamada, Syoji

    2003-12-01

    We present here new cantilevers for scanning probe microscopy (SPM) and sensor applications, which consist of silicon cantilever beam and ceramic pedestal. Silicon is only used to make cantilever beams and tips. Precision-machinery-made ceramics replaces silicon pedestal part. The ceramics was recently developed by Sumikin Ceramics and Quarts Co., Ltd. and can be machined precisely with end mill cutting. Many silicon beams are fabricated at once from a wafer using batch fabrication method. Therefore, SPM probes can be fabricated in high productivity and in low cost. These beams are transferred with transfer technique and are bonded on the ceramic pedestal with epoxy glue. We demonstrate here atomic force microscope (AFM) and gas sensor applications of the hybrid structure. In a gas sensor application, the ends of the cantilever are selectively modified with zeolite crystals as a sensitive layer. The bonding strength is enough for each application.

  5. Experimental and theoretical investigations of the quality factor for n+p silicon solar cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Garlick, G.F.J.; Kachare, A.H.

    1980-01-01

    Many N/sup +/P silicon cells made with silicon from different growth techniques have current-voltage relations of the form: I.I/sub 0/ (exp(qV/AkT) - 1) where the quality factor A is non-integral, is >1 and shows a temperature dependence. The dark forward characteristics of such cells have been measured over a range of temperature and the behavior of the factor A derived from them. A new model is presented on the assumption of non-uniform distributions of recombination levels in the junction depletion layer. This model shows good agreement with experimental data. The cells investigated had evaporated top metallization and so the junctionmore » contamination giving the recombination levels is likely to be a result of junction diffusion and is not specific to the metallization processing. The model needs further development and evaluation in order to apply it to the illuminated cell behavior and also to include any effects of distributed sheet resistance in the N/sup +/ layer. 17 refs.« less

  6. Fluorescent Silicon Nanorods-Based Ratiometric Sensors for Long-Term and Real-Time Measurements of Intracellular pH in Live Cells.

    PubMed

    Chu, Binbin; Song, Bin; Ji, Xiaoyuan; Su, Yuanyuan; Wang, Houyu; He, Yao

    2017-11-21

    Long-term and real-time investigation of the dynamic process of pH i changes is critically significant for understanding the related pathogenesis of diseases and the design of intracellular drug delivery systems. Herein, we present a one-step synthetic strategy to construct ratiometric pH sensors, which are made of europium (Eu)-doped one-dimensional silicon nanorods (Eu@SiNRs). The as-prepared Eu@SiNRs have distinct emission maxima peaks at 470 and 620 nm under 405 nm excitation. Of particular note, the fluorescence emission intensity at 470 nm decreases along with the increase of pH, while the one at 620 nm is nearly unaffected by pH changes, making Eu@SiNRs a feasible probe for pH sensing ratiometrically. Moreover, Eu@SiNRs are found to be responsive to a broad pH range (ca. 3-9), biocompatible (e.g., ∼100% of cell viability during 24 h treatment) and photostable (e.g., ∼10% loss of intensity after 40 min continuous UV irradiation). Taking advantages of these merits, we employ Eu@SiNRs for the visualization of the cytoplasmic alkalization process mediated by nigericin in living cells, for around 30 min without interruption, revealing important information for understanding the dynamic process of pH i fluctuations.

  7. Precision Timing with Silicon Sensors for Use in Calorimetry

    NASA Astrophysics Data System (ADS)

    Bornheim, A.; Ronzhin, A.; Kim, H.; Bolla, G.; Pena, C.; Xie, S.; Apresyan, A.; Los, S.; Spiropulu, M.; Ramberg, E.

    2017-11-01

    The high luminosity upgrade of the Large Hadron Collider (HL-LHC) at CERN is expected to provide instantaneous luminosities of 5 × 1034 cm -2 s -1. The high luminosities expected at the HL-LHC will be accompanied by a factor of 5 to 10 more pileup compared with LHC conditions in 2015, causing general confusion for particle identification and event reconstruction. Precision timing allows to extend calorimetric measurements into such a high density environment by subtracting the energy deposits from pileup interactions. Calorimeters employing silicon as the active component have recently become a popular choice for the HL- LHC and future collider experiments which face very high radiation environments. We present studies of basic calorimetric and precision timing measurements using a prototype composed of tungsten absorber and silicon sensor as the active medium. We show that for the bulk of electromagnetic showers induced by electrons in the range of 20 GeV to 30 GeV, we can achieve time resolutions better than 25 ps per single pad sensor.

  8. Precision Timing with Silicon Sensors for Use in Calorimetry

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bornheim, A.; Ronzhin, A.; Kim, H.

    2017-11-27

    The high luminosity upgrade of the Large Hadron Collider (HL-LHC) at CERN is expected to provide instantaneous luminosities of 5 × 10 34 cm -2 s -1. The high luminosities expected at the HL-LHC will be accompanied by a factor of 5 to 10 more pileup compared with LHC conditions in 2015, causing general confusion for particle identification and event reconstruction. Precision timing allows to extend calorimetric measurements into such a high density environment by subtracting the energy deposits from pileup interactions. Calorimeters employing silicon as the active component have recently become a popular choice for the HL- LHC andmore » future collider experiments which face very high radiation environments. We present studies of basic calorimetric and precision timing measurements using a prototype composed of tungsten absorber and silicon sensor as the active medium. We show that for the bulk of electromagnetic showers induced by electrons in the range of 20 GeV to 30 GeV, we can achieve time resolutions better than 25 ps per single pad sensor.« less

  9. Porous Silicon Structures as Optical Gas Sensors

    PubMed Central

    Levitsky, Igor A.

    2015-01-01

    We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi) and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers) are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed. PMID:26287199

  10. Application of neutron transmutation doping method to initially p-type silicon material.

    PubMed

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

  11. Determination of low solvent concentration by nano-porous silicon photonic sensors using volatile organic compound method.

    PubMed

    Bui, Huy; Pham, Van Hoi; Pham, Van Dai; Hoang, Thi Hong Cam; Pham, Thanh Binh; Do, Thuy Chi; Ngo, Quang Minh; Nguyen, Thuy Van

    2018-05-07

    A vast majority of the organic solvents used in industry and laboratories are volatile, hazardous and toxic organic compounds, they are considered as a potent problem for human health and a cause of environmental pollution. Although analytical laboratory methods can determine extremely low solvent concentration, the sensing method with low cost and high sensitivity remains a conundrum. This paper presents and compares three methods (volatile organic compound (VOC), liquid drop and saturated vapour pressure) for determination of organic solvents in liquid environment by using photonic sensor based on nano-porous silicon (pSi) microcavity structures. Among those, the VOC method provides the highest sensitivity at low solvent volume concentrations because it can create a high vapour pressure of the analyte on the sensor surface owing to the capillary deposition of organic solvent into the silicon pores. This VOC method consists of three steps: heating the solution with its particular boiling temperature, controlling the flowing gas through liquid and cooling sensor. It delivers the highest sensitivity of 6.9 nm/% at concentration of 5% and the limit of detection (LOD) of pSi-sensor is 0.014% in case of ethanol in water when using an optical system with a resolution of 0.1 nm. Especially, the VOC method is capable of detecting low volume concentration of methanol in two tested ethanol solutions of 30% (v/v) and 45% (v/v) with the LOD of pSi-sensor up to 0.01% and 0.04%, respectively. This result will help pave a way to control the quality of contaminated liquor beverages.

  12. A first order theory of the p/+/-n-n/+/ edge-illuminated silicon solar cell at very high injection levels

    NASA Technical Reports Server (NTRS)

    Goradia, C.; Sater, B. L.

    1977-01-01

    A first order theory of the edge-illuminated p(+)-n-n(+) silicon solar cell under very high injection levels has been derived. The very high injection level illuminated J-V characteristic is derived for any general base width to diffusion length (W/L) ratio and it includes the minority carrier reflection by the n-n(+) high-low junction. The beneficial effects of the high-low junction are shown to be significant until extremely high injection levels are reached. The theoretical dependencies of Jsc and Voc on temperature, incident intensity, and base resistivity are derived and discussed in detail. Some experimental results are given and these are discussed in relation to the theory.

  13. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Kumar, Ranjeet; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies,more » since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.« less

  14. Two-dimensional wavelet transform feature extraction for porous silicon chemical sensors.

    PubMed

    Murguía, José S; Vergara, Alexander; Vargas-Olmos, Cecilia; Wong, Travis J; Fonollosa, Jordi; Huerta, Ramón

    2013-06-27

    Designing reliable, fast responding, highly sensitive, and low-power consuming chemo-sensory systems has long been a major goal in chemo-sensing. This goal, however, presents a difficult challenge because having a set of chemo-sensory detectors exhibiting all these aforementioned ideal conditions are still largely un-realizable to-date. This paper presents a unique perspective on capturing more in-depth insights into the physicochemical interactions of two distinct, selectively chemically modified porous silicon (pSi) film-based optical gas sensors by implementing an innovative, based on signal processing methodology, namely the two-dimensional discrete wavelet transform. Specifically, the method consists of using the two-dimensional discrete wavelet transform as a feature extraction method to capture the non-stationary behavior from the bi-dimensional pSi rugate sensor response. Utilizing a comprehensive set of measurements collected from each of the aforementioned optically based chemical sensors, we evaluate the significance of our approach on a complex, six-dimensional chemical analyte discrimination/quantification task problem. Due to the bi-dimensional aspects naturally governing the optical sensor response to chemical analytes, our findings provide evidence that the proposed feature extractor strategy may be a valuable tool to deepen our understanding of the performance of optically based chemical sensors as well as an important step toward attaining their implementation in more realistic chemo-sensing applications. Copyright © 2013 Elsevier B.V. All rights reserved.

  15. Analysis of epitaxial drift field N on P silicon solar cells

    NASA Technical Reports Server (NTRS)

    Baraona, C. R.; Brandhorst, H. W., Jr.

    1976-01-01

    The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

  16. Mechanisms of Current Flow in the Diode Structure with an n + - p-Junction Formed by Thermal Diffusion of Phosphorus From Porous Silicon Film

    NASA Astrophysics Data System (ADS)

    Tregulov, V. V.; Litvinov, V. G.; Ermachikhin, A. V.

    2018-01-01

    Temperature dependences of current-voltage characteristics of the photoelectric converter with an antireflective film of porous silicon and an n + -p-junction formed by thermal diffusion of phosphorus from a porous film is studied. The porous silicon film was saturated with phosphorus during its growing by electrochemical method. It is shown that the current flow processes in the structure under study are significantly influenced by traps.

  17. Simulation and optimization of silicon-on-sapphire pressure sensor

    NASA Astrophysics Data System (ADS)

    Kulesh, N. A.; Kudyukov, E. V.; Balymov, K. G.; Beloyshov, A. A.

    2017-09-01

    In this paper, finite element analysis software COMSOL Multiphysics was used to simulate the performance of silicon-on-sapphire piezoresistive pressure sensor, aiming to elaborate a flexible model suitable for further optimization and customization of the currently produced pressure sensors. The base model was built around the cylindrical pressure cell made of titanium alloy having a circular diaphragm with monocrystalline sapphire layer attached. The monocrystalline piezoresistive elements were placed on top of the double-layer diaphragm and electrically connected to form the Wheatstone bridge. Verification of the model and parametric study included three main areas: geometrical parameters of the cell, position of the elements on the diaphragm, and operation at elevated temperature. Optimization of the cell geometry included variation of bossed titanium diaphragm parameters as well as rounding-off radiuses near the edges of the diaphragm. Influence of the temperature was considered separately for thermal expansion of the mechanical components and for the changes of electrical and piezoresistive properties of the piezoresistive elements. In conclusion, the simulation results were compared to the experimental data obtained for three different constructions of the commercial pressure sensors produced by SPA of Automatics named after Academician N.A. Semikhatov.

  18. Silicon photonic resonator sensors and devices

    NASA Astrophysics Data System (ADS)

    Chrostowski, Lukas; Grist, Samantha; Flueckiger, Jonas; Shi, Wei; Wang, Xu; Ouellet, Eric; Yun, Han; Webb, Mitch; Nie, Ben; Liang, Zhen; Cheung, Karen C.; Schmidt, Shon A.; Ratner, Daniel M.; Jaeger, Nicolas A. F.

    2012-02-01

    Silicon photonic resonators, implemented using silicon-on-insulator substrates, are promising for numerous applications. The most commonly studied resonators are ring/racetrack resonators. We have fabricated these and other resonators including disk resonators, waveguide-grating resonators, ring resonator reflectors, contra-directional grating-coupler ring resonators, and racetrack-based multiplexer/demultiplexers. While numerous resonators have been demonstrated for sensing purposes, it remains unclear as to which structures provide the highest sensitivity and best limit of detection; for example, disc resonators and slot-waveguide-based ring resonators have been conjectured to provide an improved limit of detection. Here, we compare various resonators in terms of sensor metrics for label-free bio-sensing in a micro-fluidic environment. We have integrated resonator arrays with PDMS micro-fluidics for real-time detection of biomolecules in experiments such as antigen-antibody binding reaction experiments using Human Factor IX proteins. Numerous resonators are fabricated on the same wafer and experimentally compared. We identify that, while evanescent-field sensors all operate on the principle that the analyte's refractive index shifts the resonant frequency, there are important differences between implementations that lie in the relationship between the optical field overlap with the analyte and the relative contributions of the various loss mechanisms. The chips were fabricated in the context of the CMC-UBC Silicon Nanophotonics Fabrication course and workshop. This yearlong, design-based, graduate training program is offered to students from across Canada and, over the last four years, has attracted participants from nearly every Canadian university involved in photonics research. The course takes students through a full design cycle of a photonic circuit, including theory, modelling, design, and experimentation.

  19. Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

    DOE PAGES

    Bubna, M.; Bolla, G.; Bortoletto, D.; ...

    2015-08-03

    The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 10 34 cm –2s –1 and collect ~ 3000fb –1 of data. The innermost layer of the pixel detector will be exposed to doses of about 10 16 n eq/ cm 2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have beenmore » fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.« less

  20. Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices

    NASA Astrophysics Data System (ADS)

    Baykan, Mehmet Onur

    dependent strain response of tri-gate p-type FinFETs are experimentally extracted using a 4-point bending jig. It is found that the low-field piezoresistance coefficient of p-type FinFETs can be modeled by using a weighted conductance average of the top and sidewall bulk piezoresistance coefficients. Next, the strain enhancement of p-type ballistic silicon nanowire MOSFETs is studied using sp3d 5s* basis nearest-neighbor tight-binding simulations coupled with a semiclassical top-of-the-barrier transport model. Size and orientation dependent strain enhancement of ballistic hole transport is explained by the strain-induced modification of the 1D nanowire valence band density-of-states. Further insights are provided for future p-type high-performance silicon nanowire logic devices. A physics based investigation is conducted to understand the strain effects on surface roughness limited electron mobility in silicon inversion layers. Based on the evidence from electrical and material characterization, a strain-induced surface morphology change is hypothesized. To model the observed electrical characteristics, we have employed a self-consistent MOSFET mobility simulator coupled with an ad hoc strain-induced roughness modification. The strain induced surface morphology change is found to be consistent among electrical and materials characterization, as well as transport simulations. In order to bridge the gap between the drift-diffusion based models for long-channel devices and the quasi-ballistic models for nanoscale channels, a unified carrier transport model is developed using an updated one-flux theory. Including the high-field and carrier confinement effects, a surface-potential based analytical transmission expression is obtained for the entire MOSFET operation range. With the new channel transmission equation and average carrier drift velocity, a new expression for channel ballisticity is defined. Impact of mechanical strain on carrier transport for both nMOSFETs and p

  1. High-resolution and fast-response fiber-optic temperature sensor using silicon Fabry-Pérot cavity.

    PubMed

    Liu, Guigen; Han, Ming; Hou, Weilin

    2015-03-23

    We report a fiber-optic sensor based on a silicon Fabry-Pérot cavity, fabricated by attaching a silicon pillar on the tip of a single-mode fiber, for high-resolution and high-speed temperature measurement. The large thermo-optic coefficient and thermal expansion coefficient of the silicon material give rise to an experimental sensitivity of 84.6 pm/°C. The excellent transparency and large refractive index of silicon over the infrared wavelength range result in a visibility of 33 dB for the reflection spectrum. A novel average wavelength tracking method has been proposed and demonstrated for sensor demodulation with improved signal-to-noise ratio, which leads to a temperature resolution of 6 × 10⁻⁴ °C. Due to the high thermal diffusivity of silicon, a response time as short as 0.51 ms for a sensor with an 80-µm-diameter and 200-µm-long silicon pillar has been experimentally achieved, suggesting a maximum frequency of ~2 kHz can be reached, to address the needs for highly dynamic environmental variations such as those found in the ocean.

  2. Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

    PubMed Central

    ur Rehman, Atteq; Lee, Soo Hong

    2013-01-01

    The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed. PMID:24459433

  3. Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

    PubMed

    ur Rehman, Atteq; Lee, Soo Hong

    2013-01-01

    The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

  4. SiN sub x passivation of silicon surfaces

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.

    1986-01-01

    The objectives were to perform surface characterization of high efficiency n+/p and p+/n silicon cells, to relate surface density to substrate dopant concentration, and to identify dominant current loss mechanisms in high efficiency cells. The approach was to measure density of states on homogeneously doped substrates with high frequency C-V and Al/SiN sub x/Si structures; to investigate density of states and photoresponse of high efficiency N+/P and P+/N cells; and to conduct I-V-T studies to identify current loss nechanisms in high efficiency cells. Results are given in tables and graphs.

  5. Light-Immune pH Sensor with SiC-Based Electrolyte-Insulator-Semiconductor Structure

    NASA Astrophysics Data System (ADS)

    Lin, Yi-Ting; Huang, Chien-Shiang; Chow, Lee; Lan, Jyun-Ming; Yang, Chia-Ming; Chang, Liann-Be; Lai, Chao-Sung

    2013-12-01

    An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95 mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.

  6. Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian; Schulze, Dirk

    2015-01-15

    Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetimemore » in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.« less

  7. InGaP/InGaAs field-effect transistor typed hydrogen sensor

    NASA Astrophysics Data System (ADS)

    Tsai, Jung-Hui; Liou, Syuan-Hao; Lin, Pao-Sheng; Chen, Yu-Chi

    2018-02-01

    In this article, the Pd-based mixture comprising silicon dioxide (SiO2) is applied as sensing material for the InGaP/InGaAs field-effect transistor typed hydrogen sensor. After wet selectively etching the SiO2, the mixture is turned into Pd nanoparticles on an interlayer. Experimental results depict that hydrogen atoms trapped inside the mixture could effectively decrease the gate barrier height and increase the drain current due to the improved sensing properties when Pd nanoparticles were formed by wet etching method. The sensitivity of the gate forward current from air (the reference) to 9800 ppm hydrogen/air environment approaches the high value of 1674. Thus, the studied device shows a good potential for hydrogen sensor and integrated circuit applications.

  8. Observation of beta and X rays with 3-D-architecture silicon microstrip sensors

    NASA Astrophysics Data System (ADS)

    Kenney, C. J.; Parker, S. I.; Krieger, B.; Ludewigt, B.; Dubbs, T. P.; Sadrozinski, H.

    2001-04-01

    The first silicon radiation sensors based on the three-dimensional (3-D) architecture have been successfully fabricated. X-ray spectra from iron-55 and americium-241 have been recorded by reading out a 3-D architecture detector via wire bonds to a low-noise, charge-sensitive preamplifier. Using a beta source, coincidences between a 3-D sensor and a plastic scintillator were observed. This is the first observation of ionizing radiation using a silicon sensor based on the 3-D architecture. Details of the apparatus and measurements are described.

  9. Design and Characterization of a Sensorized Microfluidic Cell-Culture System with Electro-Thermal Micro-Pumps and Sensors for Cell Adhesion, Oxygen, and pH on a Glass Chip.

    PubMed

    Bonk, Sebastian M; Stubbe, Marco; Buehler, Sebastian M; Tautorat, Carsten; Baumann, Werner; Klinkenberg, Ernst-Dieter; Gimsa, Jan

    2015-07-30

    We combined a multi-sensor glass-chip with a microfluidic channel grid for the characterization of cellular behavior. The grid was imprinted in poly-dimethyl-siloxane. Mouse-embryonal/fetal calvaria fibroblasts (MC3T3-E1) were used as a model system. Thin-film platinum (Pt) sensors for respiration (amperometric oxygen electrode), acidification (potentiometric pH electrodes) and cell adhesion (interdigitated-electrodes structures, IDES) allowed us to monitor cell-physiological parameters as well as the cell-spreading behavior. Two on-chip electro-thermal micro-pumps (ETμPs) permitted the induction of medium flow in the system, e.g., for medium mixing and drug delivery. The glass-wafer technology ensured the microscopic observability of the on-chip cell culture. Connecting Pt structures were passivated by a 1.2 μm layer of silicon nitride (Si3N4). Thin Si3N4 layers (20 nm or 60 nm) were used as the sensitive material of the pH electrodes. These electrodes showed a linear behavior in the pH range from 4 to 9, with a sensitivity of up to 39 mV per pH step. The oxygen sensors were circular Pt electrodes with a sensor area of 78.5 μm(2). Their sensitivity was 100 pA per 1% oxygen increase in the range from 0% to 21% oxygen (air saturated). Two different IDES geometries with 30- and 50-μm finger spacings showed comparable sensitivities in detecting the proliferation rate of MC3T3 cells. These cells were cultured for 11 days in vitro to test the biocompatibility, microfluidics and electric sensors of our system under standard laboratory conditions.

  10. Silicon strain gages bonded on stainless steel using glass frit for strain sensor applications

    NASA Astrophysics Data System (ADS)

    Zhang, Zongyang; Cheng, Xingguo; Leng, Yi; Cao, Gang; Liu, Sheng

    2014-05-01

    In this paper, a steel pressure sensor using strain gages bonded on a 17-4 PH stainless steel (SS) diaphragm based on glass frit technology is proposed. The strain gages with uniform resistance are obtained by growing an epi-silicon layer on a single crystal silicon wafer using epitaxial deposition technique. The inorganic glass frits are used as the bonding material between the strain gages and the 17-4 PH SS diaphragm. Our results show that the output performances of sensors at a high temperature of 125 °C are almost equal those at room temperature, which indicates that the glass frit bonding is a good method and may lead to a significant advance in the high temperature applicability of silicon strain gage sensors. Finally, the microstructure of the cured organic adhesive and the fired glass frit are compared. It may be concluded that the defects of the cured organic adhesive deteriorate the hysteresis and repeatability errors of the sensors.

  11. Transparent silicon strip sensors for the optical alignment of particle detector systems

    NASA Astrophysics Data System (ADS)

    Blum, W.; Kroha, H.; Widmann, P.

    1996-02-01

    Modern large-area precision tracking detectors require increasing accuracy for the alignment of their components. A novel multi-point laser alignment system has been developed for such applications. The position of detector components with respect to reference laser beams is monitored by semi-transparent optical position sensors which work on the principle of silicon strip photodiodes. Two types of custom designed transparent strip sensors, based on crystalline and on amorphous silicon as active material, have been studied. The sensors are optimized for the typical diameters of collimated laser beams of 3-5 mm over distances of 10-20 m. They provide very high position resolution, on the order of 1 μm, uniformly over a wide measurement range of several centimeters. The preparation of the sensor surfaces requires special attention in order to achieve high light transmittance and minimum distortion of the traversing laser beams. At selected wavelengths, produced by laser diodes, transmission rates above 90% have been achieved. This allows to position more than 30 sensors along one laser beam. The sensors will be equipped with custom designed integrated readout electronics.

  12. Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier

    NASA Astrophysics Data System (ADS)

    Rahmani, Faezeh; Khosravinia, Hossein

    2016-08-01

    Theoretical studies on the optimization of Silicon (Si) parameters as the base of betavoltaic battery have been presented using Monte Carlo simulations and the state equations in semiconductor to obtain maximum power. Si with active area of 1 cm2 has been considered in p-n junction and Schottky barrier structure to collect the radiation induced-charge from 10 mCi cm-2 of Nickle-63 (63Ni) Source. The results show that the betavoltaic conversion efficiency in the Si p-n structure is about 2.7 times higher than that in the Ni/Si Schottky barrier structure.

  13. Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

    NASA Astrophysics Data System (ADS)

    Ghosh, P.

    2015-03-01

    The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of 1292 double sided silicon micro-strip sensors. For the quality assurance of produced prototype sensors a laser test system (LTS) has been developed. The aim of the LTS is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype sensors which are tested with the LTS so far have 256 strips with a pitch of 50 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm , wavelength = 1060 nm). The pulse with duration (≈ 10 ns) and power (≈ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Laser scans different prototype sensors is reported.

  14. Bioresorbable silicon electronic sensors for the brain.

    PubMed

    Kang, Seung-Kyun; Murphy, Rory K J; Hwang, Suk-Won; Lee, Seung Min; Harburg, Daniel V; Krueger, Neil A; Shin, Jiho; Gamble, Paul; Cheng, Huanyu; Yu, Sooyoun; Liu, Zhuangjian; McCall, Jordan G; Stephen, Manu; Ying, Hanze; Kim, Jeonghyun; Park, Gayoung; Webb, R Chad; Lee, Chi Hwan; Chung, Sangjin; Wie, Dae Seung; Gujar, Amit D; Vemulapalli, Bharat; Kim, Albert H; Lee, Kyung-Mi; Cheng, Jianjun; Huang, Younggang; Lee, Sang Hoon; Braun, Paul V; Ray, Wilson Z; Rogers, John A

    2016-02-04

    Many procedures in modern clinical medicine rely on the use of electronic implants in treating conditions that range from acute coronary events to traumatic injury. However, standard permanent electronic hardware acts as a nidus for infection: bacteria form biofilms along percutaneous wires, or seed haematogenously, with the potential to migrate within the body and to provoke immune-mediated pathological tissue reactions. The associated surgical retrieval procedures, meanwhile, subject patients to the distress associated with re-operation and expose them to additional complications. Here, we report materials, device architectures, integration strategies, and in vivo demonstrations in rats of implantable, multifunctional silicon sensors for the brain, for which all of the constituent materials naturally resorb via hydrolysis and/or metabolic action, eliminating the need for extraction. Continuous monitoring of intracranial pressure and temperature illustrates functionality essential to the treatment of traumatic brain injury; the measurement performance of our resorbable devices compares favourably with that of non-resorbable clinical standards. In our experiments, insulated percutaneous wires connect to an externally mounted, miniaturized wireless potentiostat for data transmission. In a separate set-up, we connect a sensor to an implanted (but only partially resorbable) data-communication system, proving the principle that there is no need for any percutaneous wiring. The devices can be adapted to sense fluid flow, motion, pH or thermal characteristics, in formats that are compatible with the body's abdomen and extremities, as well as the deep brain, suggesting that the sensors might meet many needs in clinical medicine.

  15. Bioresorbable silicon electronic sensors for the brain

    NASA Astrophysics Data System (ADS)

    Kang, Seung-Kyun; Murphy, Rory K. J.; Hwang, Suk-Won; Lee, Seung Min; Harburg, Daniel V.; Krueger, Neil A.; Shin, Jiho; Gamble, Paul; Cheng, Huanyu; Yu, Sooyoun; Liu, Zhuangjian; McCall, Jordan G.; Stephen, Manu; Ying, Hanze; Kim, Jeonghyun; Park, Gayoung; Webb, R. Chad; Lee, Chi Hwan; Chung, Sangjin; Wie, Dae Seung; Gujar, Amit D.; Vemulapalli, Bharat; Kim, Albert H.; Lee, Kyung-Mi; Cheng, Jianjun; Huang, Younggang; Lee, Sang Hoon; Braun, Paul V.; Ray, Wilson Z.; Rogers, John A.

    2016-02-01

    Many procedures in modern clinical medicine rely on the use of electronic implants in treating conditions that range from acute coronary events to traumatic injury. However, standard permanent electronic hardware acts as a nidus for infection: bacteria form biofilms along percutaneous wires, or seed haematogenously, with the potential to migrate within the body and to provoke immune-mediated pathological tissue reactions. The associated surgical retrieval procedures, meanwhile, subject patients to the distress associated with re-operation and expose them to additional complications. Here, we report materials, device architectures, integration strategies, and in vivo demonstrations in rats of implantable, multifunctional silicon sensors for the brain, for which all of the constituent materials naturally resorb via hydrolysis and/or metabolic action, eliminating the need for extraction. Continuous monitoring of intracranial pressure and temperature illustrates functionality essential to the treatment of traumatic brain injury; the measurement performance of our resorbable devices compares favourably with that of non-resorbable clinical standards. In our experiments, insulated percutaneous wires connect to an externally mounted, miniaturized wireless potentiostat for data transmission. In a separate set-up, we connect a sensor to an implanted (but only partially resorbable) data-communication system, proving the principle that there is no need for any percutaneous wiring. The devices can be adapted to sense fluid flow, motion, pH or thermal characteristics, in formats that are compatible with the body’s abdomen and extremities, as well as the deep brain, suggesting that the sensors might meet many needs in clinical medicine.

  16. Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

    PubMed Central

    Abidin, Mastura Shafinaz Zainal; Hashim, Abdul Manaf; Sharifabad, Maneea Eizadi; Rahman, Shaharin Fadzli Abd; Sadoh, Taizoh

    2011-01-01

    The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications. PMID:22163786

  17. Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme

    NASA Astrophysics Data System (ADS)

    Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

    2013-04-01

    In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

  18. Rapid antibiotic susceptibility testing in a microfluidic pH sensor.

    PubMed

    Tang, Yanyan; Zhen, Li; Liu, Jingqing; Wu, Jianmin

    2013-03-05

    For appropriate selection of antibiotics in the treatment of pathogen infection, rapid antibiotic susceptibility testing (AST) is urgently needed in clinical practice. This study reports the utilization of a microfluidic pH sensor for monitoring bacterial growth rate in culture media spiked with different kinds of antibiotics. The microfluidic pH sensor was fabricated by integration of pH-sensitive chitosan hydrogel with poly(dimethylsiloxane) (PDMS) microfluidic channels. For facilitating the reflectometric interference spectroscopic measurements, the chitosan hydrogel was coated on an electrochemically etched porous silicon chip, which was used as the substrate of the microfluidic channel. Real-time observation of the pH change in the microchannel can be realized by Fourier transform reflectometric interference spectroscopy (FT-RIFS), in which the effective optical thickness (EOT) was selected as the optical signal for indicating the reversible swelling process of chitosan hydrogel stimulated by pH change. With this microfluidic pH sensor, we demonstrate that confinement of bacterial cells in a nanoliter size channel allows rapid accumulation of metabolic products and eliminates the need for long-time preincubation, thus reducing the whole detection time. On the basis of this technology, the whole bacterial growth curve can be obtained in less than 2 h, and consequently rapid AST can be realized. Compared with conventional methods, the AST data acquired from the bacterial growth curve can provide more detailed information for studying the antimicrobial behavior of antibiotics during different stages. Furthermore, the new technology also provides a convenient method for rapid minimal inhibition concentration (MIC) determination of individual antibiotics or the combinations of antibiotics against human pathogens that will find application in clinical and point-of-care medicine.

  19. A facile fluorescent sensor based on silicon nanowires for dithionite

    NASA Astrophysics Data System (ADS)

    Cao, Xingxing; Mu, Lixuan; Chen, Min; She, Guangwei

    2018-05-01

    A facile and novel fluorescent sensor for dithionite has been constructed by simultaneously immobilizing dansyl group (fluorescence molecule) and dabsyl group (quencher and recognizing group) on the silicon nanowires (SiNWs) and SiNW arrays surface. This sensor for dithionite exhibited high selectivity and a good relationship of linearity between fluorescence intensities and dithionite concentrations from 0.1 to 1 mM. This approach is straightforward and does not require complicated synthesis, which can be extended to develop other sensors with similar rationale.

  20. Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

    PubMed

    Atiwongsangthong, Narin

    2012-08-01

    The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

  1. Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

    NASA Astrophysics Data System (ADS)

    Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

    2018-02-01

    We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

  2. Silicon Carbide Sensors and Electronics for Harsh Environment Applications

    NASA Technical Reports Server (NTRS)

    Evans, Laura J.

    2007-01-01

    Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

  3. The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Brandhorst, H. W., Jr.; Mehta, S.; Swartz, C. K.

    1984-01-01

    Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

  4. A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

    NASA Astrophysics Data System (ADS)

    Shiota, Koki; Kai, Kazuho; Nagaoka, Shiro; Tsuji, Takuto; Wakahara, Akihiro; Rusop, Mohamad

    2016-07-01

    The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

  5. Silicon carbide novel optical sensor for combustion systems and nuclear reactors

    NASA Astrophysics Data System (ADS)

    Lim, Geunsik; Kar, Aravinda

    2014-09-01

    Crystalline silicon carbide is a wide bandgap semiconductor material with excellent optical properties, chemical inertness, radiation hardness and high mechanical strength at high temperatures. It is an excellent material platform for sensor applications in harsh environments such as combustion systems and nuclear reactors. A laser doping technique is used to fabricate SiC sensors for different combustion gases such as CO2, CO, NO and NO2. The sensor operates based on the principle of semiconductor optics, producing optical signal in contrast to conventional electrical sensors that produces electrical signal. The sensor response is measured with a low power He-Ne or diode laser.

  6. Cell performance and defect behavior in proton-irradiated lithium-counterdoped n(+)p silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Stupica, J. W.; Swartz, C. K.; Goradia, C.

    1986-01-01

    Lithium-counterdoped n(+)p silicon solar cells were irradiated by 10-MeV protons, and their performance was determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. Deep-level transient spectroscopy studies of deep-level defects were used to identify two lithium-related defects. Defect energy levels obtained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with previous suggestion by Weinberg et al. (1984) of a lithium-oxygen interaction which tends to inhibit formation of an interstitial boron-oxygen defect.

  7. pH measurements of FET-based (bio)chemical sensors using portable measurement system.

    PubMed

    Voitsekhivska, T; Zorgiebel, F; Suthau, E; Wolter, K-J; Bock, K; Cuniberti, G

    2015-01-01

    In this study we demonstrate the sensing capabilities of a portable multiplex measurement system for FET-based (bio)chemical sensors with an integrated microfluidic interface. We therefore conducted pH measurements with Silicon Nanoribbon FET-based Sensors using different measurement procedures that are suitable for various applications. We have shown multiplexed measurements in aqueous medium for three different modes that are mutually specialized in fast data acquisition (constant drain current), calibration-less sensing (constant gate voltage) and in providing full information content (sweeping mode). Our system therefore allows surface charge sensing for a wide range of applications and is easily adaptable for multiplexed sensing with novel FET-based (bio)chemical sensors.

  8. A general quantitative pH sensor developed with dicyandiamide N-doped high quantum yield graphene quantum dots.

    PubMed

    Wu, Zhu Lian; Gao, Ming Xuan; Wang, Ting Ting; Wan, Xiao Yan; Zheng, Lin Ling; Huang, Cheng Zhi

    2014-04-07

    A general quantitative pH sensor for environmental and intracellular applications was developed by the facile hydrothermal preparation of dicyandiamide (DCD) N-doped high quantum yield (QY) graphene quantum dots (GQDs) using citric acid (CA) as the carbon source. The obtained N-doped GQDs have excellent photoluminesence (PL) properties with a relatively high QY of 36.5%, suggesting that N-doped chemistry could promote the QY of carbon nanomaterials. The possible mechanism for the formation of the GQDs involves the CA self-assembling into a nanosheet structure through intermolecular H-bonding at the initial stage of the reaction, and then the pure graphene core with many function groups formed through the dehydration between the carboxyl and hydroxyl of the intermolecules under hydrothermal conditions. These N-doped GQDs have low toxicity, and are photostable and pH-sensitive between 1.81 to 8.96, giving a general pH sensor with a wide range of applications from real water to intracellular contents.

  9. Just-in-Time Correntropy Soft Sensor with Noisy Data for Industrial Silicon Content Prediction.

    PubMed

    Chen, Kun; Liang, Yu; Gao, Zengliang; Liu, Yi

    2017-08-08

    Development of accurate data-driven quality prediction models for industrial blast furnaces encounters several challenges mainly because the collected data are nonlinear, non-Gaussian, and uneven distributed. A just-in-time correntropy-based local soft sensing approach is presented to predict the silicon content in this work. Without cumbersome efforts for outlier detection, a correntropy support vector regression (CSVR) modeling framework is proposed to deal with the soft sensor development and outlier detection simultaneously. Moreover, with a continuous updating database and a clustering strategy, a just-in-time CSVR (JCSVR) method is developed. Consequently, more accurate prediction and efficient implementations of JCSVR can be achieved. Better prediction performance of JCSVR is validated on the online silicon content prediction, compared with traditional soft sensors.

  10. Just-in-Time Correntropy Soft Sensor with Noisy Data for Industrial Silicon Content Prediction

    PubMed Central

    Chen, Kun; Liang, Yu; Gao, Zengliang; Liu, Yi

    2017-01-01

    Development of accurate data-driven quality prediction models for industrial blast furnaces encounters several challenges mainly because the collected data are nonlinear, non-Gaussian, and uneven distributed. A just-in-time correntropy-based local soft sensing approach is presented to predict the silicon content in this work. Without cumbersome efforts for outlier detection, a correntropy support vector regression (CSVR) modeling framework is proposed to deal with the soft sensor development and outlier detection simultaneously. Moreover, with a continuous updating database and a clustering strategy, a just-in-time CSVR (JCSVR) method is developed. Consequently, more accurate prediction and efficient implementations of JCSVR can be achieved. Better prediction performance of JCSVR is validated on the online silicon content prediction, compared with traditional soft sensors. PMID:28786957

  11. pH-controlled silicon nanowires fluorescence switch

    NASA Astrophysics Data System (ADS)

    Mu, Lixuan; Shi, Wensheng; Zhang, Taiping; Zhang, Hongyan; She, Guangwei

    2010-08-01

    Covalently immobilizing photoinduced electronic transfer (PET) fluorophore 3-[N, N-bis(9-anthrylmethyl)amino]-propyltriethoxysilane (DiAN) on the surface of silicon nanowires (SiNWs) resulted a SiNWs-based fluorescence switch. This fluorescence switch is operated by adjustment of the acidity of the environment and exhibits sensitive response to pH at the range from 8 to 10. Such response is attributed to the effect of pH on the PET process. The successful combination of logic switch and SiNWs provides a rational approach to assemble different logic molecules on SiNWs for realization of miniaturization and modularization of switches and logic devices.

  12. Silicon force sensor and method of using the same

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Galambos, Paul C.; Crenshaw, Thomas B.; Nishida, Erik E.

    The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload uponmore » the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.« less

  13. Characterization of thin irradiated epitaxial silicon sensors for the CMS phase II pixel upgrade

    NASA Astrophysics Data System (ADS)

    Centis Vignali, M.

    2015-02-01

    The high-luminosity upgrade of the Large Hadron Collider foreseen for 2023 resulted on the decision to replace the tracker system of the CMS experiment. The innermost layer of the new pixel detector will experience fluences in the order of phieq ≈ 1016 cm-2 and a dose of ≈ 5 MGy after an integrated luminosity of 3000 fb-1. Several materials and designs are under investigation in order to build a detector that can withstand such high fluences. Thin planar silicon sensors are good candidates to achieve this goal since the degradation of the signal produced by traversing particles is less severe than for thicker devices. A study has been carried out in order to characterize highly irradiated planar epitaxial silicon sensors with an active thickness of 100 μm. The investigation includes pad diodes and strip detectors irradiated up to a fluence of phieq = 1.3 × 1016 cm-2, and 3 × 1015 cm-2, respectively. The electrical properties of diodes have been characterized using laboratory measurements, while measurements have been carried out at the DESY II test beam facility to characterize the charge collection of the strip detectors. A beam telescope has been used to determine precisely the impact position of beam particles on the sensor. This allows the unbiased extraction of the charge deposited in the strip sensor and good identification of the noise. In this paper, the results obtained for p-bulk sensors are shown. The charge collection efficiency of the strip sensors is 90% at 1000 V after a fluence of phieq = 3 × 1015 cm-2. The irradiated diodes show charge multiplication effects. The impact of the threshold applied to a detector on its efficiency is also discussed.

  14. Diffusion lengths in irradiated N/P InP-on-Si solar cells

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven; Colerico, Claudia; Summers, Geoffrey P.; Walters, Robert J.; Burke, Edward A.

    1995-01-01

    Indium phosphide (InP) solar cells are being made on silicon (Si) wafers (InP/Si) to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers compared to InP or germanium (Ge) wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. InP/Si cells have higher absolute efficiency after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells. In this work, base electron diffusion lengths in the N/P cell are extracted from measured AM0 short-circuit photocurrent at various irradiation levels out to an equivalent 1 MeV fluence of 1017 1 MeV electrons/sq cm for a 1 sq cm 12% BOL InP/Si cell. These values are then checked for consistency by comparing measured Voc data with a theoretical Voc model that includes a dark current term that depends on the extracted diffusion lengths.

  15. Investigation of gas surface interactions at self-assembled silicon surfaces acting as gas sensors

    NASA Astrophysics Data System (ADS)

    Narducci, Dario; Bernardinello, Patrizia; Oldani, Matteo

    2003-05-01

    This paper reports the results of an investigation aimed at using self-assembled monolayers to modify the supramolecular interactions between Si surfaces and gaseous molecules. The specific goal is that of employing molecularly imprinted silicon surfaces to develop a new class of chemical sensors capable to detect species with enhanced selectivity. Single-crystal p-type (0 0 1) silicon has been modified by grafting organic molecules onto its surface by using wet chemistry synthetic methods. Silicon has been activated toward nucleophilic attack by brominating its surface using a modified version of the purple etch, and aromatic fragments have been bonded through the formation of direct Si-C bonds onto it using Grignard reagents or lithium aryl species. Formation of self-assembled monolayers (SAMs) was verified by using vibrational spectroscopy. Porous metal-SAM-Si diodes have been successfully tested as resistive chemical sensors toward NO x, SO x, CO, NH 3 and methane. Current-voltage characteristics measured at different gas compositions showed that the mechanism of surface electron density modulation involves a modification of the junction barrier height upon gas adsorption. Quantum-mechanical simulations of the interaction mechanism were carried out using different computational methods to support such an interaction mechanism. The results obtained appear to open up new relevant applications of the SAM techniques in the area of gas sensing.

  16. Tuning the sensing range of silicon pressure sensor by trench etching technology

    NASA Astrophysics Data System (ADS)

    Chou, Yu-Tuan; Lin, Hung-Yi; Hu, Hsin-Hua

    2006-01-01

    The silicon pressure sensor has been developed for over thirty years and widely used in automobiles, medical instruments, commercial electronics, etc. There are many different specifications of silicon pressure sensors that cover a very large sensing range, from less than 1 psi to as high as 1000 psi. The key elements of the silicon pressure sensor are a square membrane and the piezoresistive strain gages near the boundary of the membrane. The dimensions of the membrane determine the full sensing range and the sensitivity of the silicon sensor, including thickness and in-plane length. Unfortunately, in order to change the sensing range, the manufacturers need to order a customized epi wafer to get the desired thickness. All masks (usually six) have to be re-laid and re-fabricated for different membrane sizes. The existing technology requires at least three months to deliver the prototype for specific customer requests or the new application market. This research proposes a new approach to dramatically reduce the prototyping time from three months to one week. The concept is to tune the rigidity of the sensing membrane by modifying the boundary conditions without changing the plenary size. An extra mask is utilized to define the geometry and location of deep-RIE trenches and all other masks remain the same. Membranes with different depths and different patterns of trenches are designed for different full sensing ranges. The simulation results show that for a 17um thick and 750um wide membrane, the adjustable range by tuning trench depth is about 45% (from 5um to 10um), and can go to as high as 100% by tuning both the pattern and depth of the trenches. Based on an actual test in a product fabrication line, we verified that the total delivery time can be minimized to one week to make the prototyping very effective and cost-efficient.

  17. Study on digital closed-loop system of silicon resonant micro-sensor

    NASA Astrophysics Data System (ADS)

    Xu, Yefeng; He, Mengke

    2008-10-01

    Designing a micro, high reliability weak signal extracting system is a critical problem need to be solved in the application of silicon resonant micro-sensor. The closed-loop testing system based on FPGA uses software to replace hardware circuit which dramatically decrease the system's mass and power consumption and make the system more compact, both correlation theory and frequency scanning scheme are used in extracting weak signal, the adaptive frequency scanning arithmetic ensures the system real-time. The error model was analyzed to show the solution to enhance the system's measurement precision. The experiment results show that the closed-loop testing system based on FPGA has the personality of low power consumption, high precision, high-speed, real-time etc, and also the system is suitable for different kinds of Silicon Resonant Micro-sensor.

  18. Asymmetric resonance frequency analysis of in-plane electrothermal silicon cantilevers for nanoparticle sensors

    NASA Astrophysics Data System (ADS)

    Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Marks, Markus; Suryo Wasisto, Hutomo; Peiner, Erwin

    2016-10-01

    The asymmetric resonance frequency analysis of silicon cantilevers for a low-cost wearable airborne nanoparticle detector (Cantor) is described in this paper. The cantilevers, which are operated in the fundamental in-plane resonance mode, are used as a mass-sensitive microbalance. They are manufactured out of bulk silicon, containing a full piezoresistive Wheatstone bridge and an integrated thermal heater for reading the measurement output signal and stimulating the in-plane excitation, respectively. To optimize the sensor performance, cantilevers with different cantilever geometries are designed, fabricated and characterized. Besides the resonance frequency, the quality factor (Q) of the resonance curve has a high influence concerning the sensor sensitivity. Because of an asymmetric resonance behaviour, a novel fitting function and method to extract the Q is created, different from that of the simple harmonic oscillator (SHO). For testing the sensor in a long-term frequency analysis, a phase- locked loop (PLL) circuit is employed, yielding a frequency stability of up to 0.753 Hz at an Allan variance of 3.77 × 10-6. This proposed asymmetric resonance frequency analysis method is expected to be further used in the process development of the next-generation Cantor.

  19. Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

    NASA Technical Reports Server (NTRS)

    Chen, L. Y.; Loferski, J. J.

    1975-01-01

    Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

  20. Multi-spot porous silicon chip prepared from asymmetric electrochemical etching for human immunoglobin G sensor.

    PubMed

    Um, Sungyong; Cho, Bomin; Woo, Hee-Gweon; Sohn, Honglae

    2011-08-01

    Multi-spot porous silicon (MSPS)-based optical biosensor was developed to specify the biomolecules. MSPS chip was generated by an electrochemical etching of silicon wafer using an asymmetric electrode configuration in aqueous ethanolic HF solution and constituted with nine arrayed porous silicon. MSPS prepared from anisotropic etching conditions displayed the Fabry-Pérot fringe patterns which varied spatially across the porous silicon (PS). Each spot displayed different reflection resonances and different pore characteristics as a function of the lateral distance from the Pt counter electrode. The sensor system consists of the 3 x 3 spot array of porous silicon modified with Protein A. The system was probed with various fragments of an aqueous Human Immunoglobin G (Ig G) analyte. The sensor operated by measurement of the reflection patterns in the white light reflection spectrum of MSPS. Molecular binding and specificity was detected as a shift in wavelength of these Fabry-Pérot fringe patterns.

  1. A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Shiota, Koki, E-mail: a14510@sr.kagawa-nct.ac.jp; Kai, Kazuho; Nagaoka, Shiro, E-mail: nagaoka@es.kagawa-nct.ac.jp

    The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As themore » result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.« less

  2. Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect.

    PubMed

    Wang, Zhaona; Yu, Ruomeng; Wen, Xiaonan; Liu, Ying; Pan, Caofeng; Wu, Wenzhuo; Wang, Zhong Lin

    2014-12-23

    Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

  3. High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

    2014-01-01

    Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

  4. On the timing performance of thin planar silicon sensors

    NASA Astrophysics Data System (ADS)

    Akchurin, N.; Ciriolo, V.; Currás, E.; Damgov, J.; Fernández, M.; Gallrapp, C.; Gray, L.; Junkes, A.; Mannelli, M.; Martin Kwok, K. H.; Meridiani, P.; Moll, M.; Nourbakhsh, S.; Pigazzini, S.; Scharf, C.; Silva, P.; Steinbrueck, G.; de Fatis, T. Tabarelli; Vila, I.

    2017-07-01

    We report on the signal timing capabilities of thin silicon sensors when traversed by multiple simultaneous minimum ionizing particles (MIP). Three different planar sensors, with depletion thicknesses 133, 211, and 285 μm, have been exposed to high energy muons and electrons at CERN. We describe signal shape and timing resolution measurements as well as the response of these devices as a function of the multiplicity of MIPs. We compare these measurements to simulations where possible. We achieve better than 20 ps timing resolution for signals larger than a few tens of MIPs.

  5. Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

    PubMed Central

    Wyrsch, Nicolas; Choong, Gregory; Miazza, Clément; Ballif, Christophe

    2008-01-01

    Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode. PMID:27873778

  6. Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata (Inventor); Zheng, Xinyu (Inventor)

    2002-01-01

    Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

  7. Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

    NASA Technical Reports Server (NTRS)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

    2005-01-01

    Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

  8. In-vitro investigations of a pH- and ionic-strength-responsive polyelectrolytic hydrogel using a piezoresistive microsensor

    PubMed Central

    Schulz, Volker; Guenther, Margarita; Gerlach, Gerald; Magda, Jules J.; Tathireddy, Prashant; Rieth, Loren; Solzbacher, Florian

    2010-01-01

    Environmental responsive or smart hydrogels show a volume phase transition due to changes of external stimuli such as pH or ionic strength of an ambient solution. Thus, they are able to convert reversibly chemical energy into mechanical energy and therefore they are suitable as sensitive material for integration in biochemical microsensors and MEMS devices. In this work, micro-fabricated silicon pressure sensor chips with integrated piezoresistors were used as transducers for the conversion of mechanical work into an appropriate electrical output signal due to the deflection of a thin silicon bending plate. Within this work two different sensor designs have been studied. The biocompatible poly(hydroxypropyl methacrylate-N,N-dimethylaminoethyl methacrylate-tetra-ethyleneglycol dimethacrylate) (HPMA-DMA-TEGDMA) was used as an environmental sensitive element in piezoresistive biochemical sensors. This polyelectrolytic hydrogel shows a very sharp volume phase transition at pH values below about 7.4 which is in the range of the physiological pH. The sensor's characteristic response was measured in-vitro for changes in pH of PBS buffer solution at fixed ionic strength. The experimental data was applied to the Hill equation and the sensor sensitivity as a function of pH was calculated out of it. The time-dependent sensor response was measured for small changes in pH, whereas different time constants have been observed. The same sensor principal was used for sensing of ionic strength. The time-dependent electrical sensor signal of both sensors was measured for variations in ionic strength at fixed pH value using PBS buffer solution. Both sensor types showed an asymmetric swelling behavior between the swelling and the deswelling cycle as well as different time constants, which was attributed to the different nature of mechanical hydrogel-confinement inside the sensor. PMID:21152365

  9. Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications

    NASA Astrophysics Data System (ADS)

    Kähler, Julian; Döring, Lutz; Merzsch, Stephan; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2011-06-01

    For future measurements while depth drilling, commercial sensors are required for a temperature range from -40 up to 300 °C. Conventional piezoresistive silicon sensors cannot be used at higher temperatures due to an exponential increase of leakage currents which results in a drop of the bridge voltage. A well-known procedure to expand the temperature range of silicon sensors and to reduce leakage currents is to employ Silicon-On-Insulator (SOI) instead of standard wafer material. Diffused resistors can be operated up to 200 °C, but show the same problems beyond due to leakage of the p-njunction. Our approach is to use p-SOI where resistors as well as interconnects are defined by etching down to the oxide layer. Leakage is suppressed and the temperature dependence of the bridges is very low (TCR = (2.6 +/- 0.1) μV/K@1 mA up to 400 °C). The design and process flow will be presented in detail. The characteristics of Wheatstone bridges made of silicon, n- SOI, and p-SOI will be shown for temperatures up to 300 °C. Besides, thermal FEM-simulations will be described revealing the effect of stress between silicon and the silicon-oxide layer during temperature cycling.

  10. The electrophotonic silicon biosensor

    NASA Astrophysics Data System (ADS)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-09-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale.

  11. Application research on the sensitivity of porous silicon

    NASA Astrophysics Data System (ADS)

    Xu, Gaobin; Xi, Ye; Chen, Xing; Ma, Yuanming

    2017-09-01

    Applications based on sensitive property of porous silicon (PSi) were researched. As a kind of porous material, the feasibility of PSi as a getter material was studied. Five groups of samples with different parameters were prepared. The gas-sensing property of PSi was studied by the test system and suitable parameters of PSi were also discussed. Meanwhile a novel structure of humidity sensor, using porous silicon as humidity-sensitive material, based on MEMS process has been successfully designed. The humidity-sensing properties were studied by a test system. Because of the polysilicon layer deposited upon the PSi layer, the humidity sensor can realize a quick dehumidification by itself. To extend service life and reduce the effect of the environment, a passivation layer (Si3N4) was also deposited on the surface of electrodes. The result indicated the novel humidity sensor presented high sensitivity (1.1 pF/RH%), low hysteresis, low temperature coefficient (0.5%RH/°C) and high stability.

  12. MEMS based Low Cost Piezoresistive Microcantilever Force Sensor and Sensor Module

    PubMed Central

    Pandya, H. J.; Kim, Hyun Tae; Roy, Rajarshi; Desai, Jaydev P.

    2014-01-01

    In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in Argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400–1050°C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050°C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 µm in length, 40 µm wide and 1.0 µm thick. A series of force-displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488N/m and 2.7mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen. PMID:24855449

  13. MEMS based Low Cost Piezoresistive Microcantilever Force Sensor and Sensor Module.

    PubMed

    Pandya, H J; Kim, Hyun Tae; Roy, Rajarshi; Desai, Jaydev P

    2014-03-01

    In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in Argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400-1050°C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050°C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 µm in length, 40 µm wide and 1.0 µm thick. A series of force-displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488N/m and 2.7mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen.

  14. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    NASA Astrophysics Data System (ADS)

    Mazzillo, M.; Sciuto, A.; Mannino, G.; Renna, L.; Costa, N.; Badalà, P.

    2016-10-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320-400 nm) and UV-B (290-320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni2Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  15. Investigation of silicon surface passivation by silicon nitride film deposition

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.

    1984-01-01

    The use of Sin sub x grown by plasma enhanced chemical vapor deposition (PECVO) for passivating silicon surfaces was studied. The application of PECVO SiN sub x films for passivations of silicon N+/P or P+/N solar cells is of particular interest. This program has involved the following areas of investigation: (1) Establishment of PECVO system and development of procedures for growth of SiN sub x; (2) Optical characterization of SiN sub x films; (3) Characterization of the SiN sub x/Si interface; (4) Surface recombination velocity deduced from photoresponse; (5) Current-Voltage analyses of silicon N+/P cells; and (6) Gated diode device studies.

  16. Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

    NASA Technical Reports Server (NTRS)

    Pantic, Dragan M.; Kapoor, Vik J.; Young, Paul G.; Williams, Wallace D.; Dickman, John E.

    1990-01-01

    Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

  17. Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping

    NASA Astrophysics Data System (ADS)

    Dong, Gangqiang; Liu, Fengzhen; Liu, Jing; Zhang, Hailong; Zhu, Meifang

    2013-12-01

    A radial p-n junction solar cell based on vertically free-standing silicon nanowire (SiNW) array is realized using a novel low-temperature and shallow phosphorus doping technique. The SiNW arrays with excellent light trapping property were fabricated by metal-assisted chemical etching technique. The shallow phosphorus doping process was carried out in a hot wire chemical vapor disposition chamber with a low substrate temperature of 250°C and H2-diluted PH3 as the doping gas. Auger electron spectroscopy and Hall effect measurements prove the formation of a shallow p-n junction with P atom surface concentration of above 1020 cm-3 and a junction depth of less than 10 nm. A short circuit current density of 37.13 mA/cm2 is achieved for the radial p-n junction SiNW solar cell, which is enhanced by 7.75% compared with the axial p-n junction SiNW solar cell. The quantum efficiency spectra show that radial transport based on the shallow phosphorus doping of SiNW array improves the carrier collection property and then enhances the blue wavelength region response. The novel shallow doping technique provides great potential in the fabrication of high-efficiency SiNW solar cells.

  18. Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n-type silicon/n-type silicon

    NASA Astrophysics Data System (ADS)

    Ikedo, Akihito; Kawashima, Takahiro; Kawano, Takeshi; Ishida, Makoto

    2009-07-01

    Repeated vapor-liquid-solid (VLS) growth with Au and PH3-Si2H6 mixture gas as the growth catalyst and silicon source, respectively, was used to construct n-type silicon/n-type silicon wire arrays of various lengths. Silicon wires of various lengths within an array could be grown by employing second growth over the first VLS grown wire. Additionally, the junction at the interface between the first and the second wires were examined. Current-voltage measurements of the wires exhibited linear behavior with a resistance of 850 Ω, confirming nonelectrical barriers at the junction, while bending tests indicated that the mechanical properties of the wire did not change.

  19. Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices

    PubMed Central

    Karki Gautam, Laxmi; Junda, Maxwell M.; Haneef, Hamna F.; Collins, Robert W.; Podraza, Nikolas J.

    2016-01-01

    Optimization of thin film photovoltaics (PV) relies on characterizing the optoelectronic and structural properties of each layer and correlating these properties with device performance. Growth evolution diagrams have been used to guide production of materials with good optoelectronic properties in the full hydrogenated amorphous silicon (a-Si:H) PV device configuration. The nucleation and evolution of crystallites forming from the amorphous phase were studied using in situ near-infrared to ultraviolet spectroscopic ellipsometry during growth of films prepared as a function of hydrogen to reactive gas flow ratio R = [H2]/[SiH4]. In conjunction with higher photon energy measurements, the presence and relative absorption strength of silicon-hydrogen infrared modes were measured by infrared extended ellipsometry measurements to gain insight into chemical bonding. Structural and optical models have been developed for the back reflector (BR) structure consisting of sputtered undoped zinc oxide (ZnO) on top of silver (Ag) coated glass substrates. Characterization of the free-carrier absorption properties in Ag and the ZnO + Ag interface as well as phonon modes in ZnO were also studied by spectroscopic ellipsometry. Measurements ranging from 0.04 to 5 eV were used to extract layer thicknesses, composition, and optical response in the form of complex dielectric function spectra (ε = ε1 + iε2) for Ag, ZnO, the ZnO + Ag interface, and undoped a-Si:H layer in a substrate n-i-p a-Si:H based PV device structure. PMID:28773255

  20. Vertical waveguides integrated with silicon photodetectors: Towards high efficiency and low cross-talk image sensors

    NASA Astrophysics Data System (ADS)

    Tut, Turgut; Dan, Yaping; Duane, Peter; Yu, Young; Wober, Munib; Crozier, Kenneth B.

    2012-01-01

    We describe the experimental realization of vertical silicon nitride waveguides integrated with silicon photodetectors. The waveguides are embedded in a silicon dioxide layer. Scanning photocurrent microscopy is performed on a device containing a waveguide, and on a device containing the silicon dioxide layer, but without the waveguide. The results confirm the waveguide's ability to guide light onto the photodetector with high efficiency. We anticipate that the use of these structures in image sensors, with one waveguide per pixel, would greatly improve efficiency and significantly reduce inter-pixel crosstalk.

  1. N-Type delta Doping of High-Purity Silicon Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

    2005-01-01

    A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

  2. A study of transition from n- to p-type based on hexagonal WO3 nanorods sensor

    NASA Astrophysics Data System (ADS)

    Wu, Ya-Qiao; Hu, Ming; Wei, Xiao-Ying

    2014-04-01

    Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 °C using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods are studied by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive spectroscopy. It is found that the agglomeration of the nanorods is strongly dependent on the PH value of the reaction solution. Uniform and isolated WO3 nanorods with diameters ranging from 100 nm-150 nm and lengths up to several micrometers are obtained at PH = 2.5 and the nanorods are identified as being hexagonal in phase structure. The sensing characteristics of the WO3 nanorod sensor are obtained by measuring the dynamic response to NO2 with concentrations in the range 0.5 ppm-5 ppm and at working temperatures in the range 25 °C-250 °C. The obtained WO3 nanorods sensors are found to exhibit opposite sensing behaviors, depending on the working temperature. When being exposed to oxidizing NO2 gas, the WO3 nanorod sensor behaves as an n-type semiconductor as expected when the working temperature is higher than 50 °C, whereas, it behaves as a p-type semiconductor below 50 °C. The origin of the n- to p-type transition is correlated with the formation of an inversion layer at the surface of the WO3 nanorod at room temperature. This finding is useful for making new room temperature NO2 sensors based on hexagonal WO3 nanorods.

  3. Reliability of Measured Data for pH Sensor Arrays with Fault Diagnosis and Data Fusion Based on LabVIEW

    PubMed Central

    Liao, Yi-Hung; Chou, Jung-Chuan; Lin, Chin-Yi

    2013-01-01

    Fault diagnosis (FD) and data fusion (DF) technologies implemented in the LabVIEW program were used for a ruthenium dioxide pH sensor array. The purpose of the fault diagnosis and data fusion technologies is to increase the reliability of measured data. Data fusion is a very useful statistical method used for sensor arrays in many fields. Fault diagnosis is used to avoid sensor faults and to measure errors in the electrochemical measurement system, therefore, in this study, we use fault diagnosis to remove any faulty sensors in advance, and then proceed with data fusion in the sensor array. The average, self-adaptive and coefficient of variance data fusion methods are used in this study. The pH electrode is fabricated with ruthenium dioxide (RuO2) sensing membrane using a sputtering system to deposit it onto a silicon substrate, and eight RuO2 pH electrodes are fabricated to form a sensor array for this study. PMID:24351636

  4. Reliability of measured data for pH sensor arrays with fault diagnosis and data fusion based on LabVIEW.

    PubMed

    Liao, Yi-Hung; Chou, Jung-Chuan; Lin, Chin-Yi

    2013-12-13

    Fault diagnosis (FD) and data fusion (DF) technologies implemented in the LabVIEW program were used for a ruthenium dioxide pH sensor array. The purpose of the fault diagnosis and data fusion technologies is to increase the reliability of measured data. Data fusion is a very useful statistical method used for sensor arrays in many fields. Fault diagnosis is used to avoid sensor faults and to measure errors in the electrochemical measurement system, therefore, in this study, we use fault diagnosis to remove any faulty sensors in advance, and then proceed with data fusion in the sensor array. The average, self-adaptive and coefficient of variance data fusion methods are used in this study. The pH electrode is fabricated with ruthenium dioxide (RuO2) sensing membrane using a sputtering system to deposit it onto a silicon substrate, and eight RuO2 pH electrodes are fabricated to form a sensor array for this study.

  5. Diffusion lengths in irradiated N/P InP-on-Si solar cells

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven; Colerico, Claudia; Summers, Geoffrey P.; Walters, Robert J.; Burke, Edward A.

    1996-01-01

    Indium phosphide (InP) solar cells were made on silicon (Si) wafers (InP/Si) by to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. Spire has made N/P InP/Si cells of sizes up to 2 cm by 4 cm with beginning-of-life (BOL) AM0 efficiencies over 13% (one-sun, 28C). These InP/Si cells have higher absolute efficiency and power density after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells after a fluence of about 2e15 1 MeV electrons/sq. cm. In this work, we investigate the minority carrier (electron) base diffusion lengths in the N/P InP/Si cells. A quantum efficiency model was constructed for a 12% BOL AM0 N/P InP/Si cell which agreed well with the absolutely measured quantum efficiency and the sun-simulator measured AM0 photocurrent (30.1 mA/sq. cm). This model was then used to generate a table of AM0 photocurrents for a range of base diffusion lengths. AM0 photocurrents were then measured for irradiations up to 7.7e16 1 MeV electrons/sq. cm (the 12% BOL cell was 8% after the final irradiation). By comparing the measured photocurrents with the predicted photocurrents, base diffusion lengths were assigned at each fluence level. A damage coefficient K of 4e-8 and a starting (unirradiated) base electron diffusion length of 0.8 microns fits the data well. The quantum efficiency was measured again at the end of the experiment to verify that the photocurrent predicted by the model (25.5 mA/sq. cm) agreed with the simulator-measured photocurrent after irradiation (25.7 mA/sq. cm).

  6. Silicon-on-insulator sensors using integrated resonance-enhanced defect-mediated photodetectors.

    PubMed

    Fard, Sahba Talebi; Murray, Kyle; Caverley, Michael; Donzella, Valentina; Flueckiger, Jonas; Grist, Samantha M; Huante-Ceron, Edgar; Schmidt, Shon A; Kwok, Ezra; Jaeger, Nicolas A F; Knights, Andrew P; Chrostowski, Lukas

    2014-11-17

    A resonance-enhanced, defect-mediated, ring resonator photodetector has been implemented as a single unit biosensor on a silicon-on-insulator platform, providing a cost effective means of integrating ring resonator sensors with photodetectors for lab-on-chip applications. This method overcomes the challenge of integrating hybrid photodetectors on the chip. The demonstrated responsivity of the photodetector-sensor was 90 mA/W. Devices were characterized using refractive index modified solutions and showed sensitivities of 30 nm/RIU.

  7. Photonic molecules for application in silicon-on-insulator optical sensors

    NASA Astrophysics Data System (ADS)

    Barea, Luis A. M.; Souza, Mario C. M. M.; Moras, Andre L.; Catellan, Alvaro R. G.; Cirino, Giuseppe A.; Von Zuben, Antonio A. G.; Bassani, Jose W. M.; Frateschi, Newton C.

    2018-02-01

    Optical sensors based on integrated photonics have experienced impressive advancements in the past few decades and represent one of the main sensing solutions in many areas including environmental sensing and medical diagnostics. In this context, optical microcavities are extensively employed as refractive index (RI) sensors, providing sharp optical resonances that allow the detection of very small variations in the surrounding RI. With increased sensitivity, however, the device is subjected to environmental perturbations that can also change the RI, such as temperature variations, and therefore compromise their reliability. In this work, we present the concept and experimental realization of a photonic sensor based on coupled microcavities or Photonic Molecules (PM) in which only one cavity is exposed to the sensing solution, allowing a differential measurement of the RI change. The device consists of an exposed 5-μm radius microdisk resonator coupled to an external clad microring resonator fabricated on silicon-on-insulator (SOI) platform. This design allows good sensitivity (26 nm/RIU) for transverse electrical mode (TE-mode) in a compact footprint (40 × 40 μm2), representing a good solution for real-life applications in which measurement conditions are not easily controllable.

  8. New Flexible Silicone-Based EEG Dry Sensor Material Compositions Exhibiting Improvements in Lifespan, Conductivity, and Reliability.

    PubMed

    Yu, Yi-Hsin; Chen, Shih-Hsun; Chang, Che-Lun; Lin, Chin-Teng; Hairston, W David; Mrozek, Randy A

    2016-10-31

    This study investigates alternative material compositions for flexible silicone-based dry electroencephalography (EEG) electrodes to improve the performance lifespan while maintaining high-fidelity transmission of EEG signals. Electrode materials were fabricated with varying concentrations of silver-coated silica and silver flakes to evaluate their electrical, mechanical, and EEG transmission performance. Scanning electron microscope (SEM) analysis of the initial electrode development identified some weak points in the sensors' construction, including particle pull-out and ablation of the silver coating on the silica filler. The newly-developed sensor materials achieved significant improvement in EEG measurements while maintaining the advantages of previous silicone-based electrodes, including flexibility and non-toxicity. The experimental results indicated that the proposed electrodes maintained suitable performance even after exposure to temperature fluctuations, 85% relative humidity, and enhanced corrosion conditions demonstrating improvements in the environmental stability. Fabricated flat (forehead) and acicular (hairy sites) electrodes composed of the optimum identified formulation exhibited low impedance and reliable EEG measurement; some initial human experiments demonstrate the feasibility of using these silicone-based electrodes for typical lab data collection applications.

  9. Structure assignment, electronic properties, and magnetism quenching of endohedrally doped neutral silicon clusters, Si(n)Co (n = 10-12).

    PubMed

    Li, Yejun; Tam, Nguyen Minh; Claes, Pieterjan; Woodham, Alex P; Lyon, Jonathan T; Ngan, Vu Thi; Nguyen, Minh Tho; Lievens, Peter; Fielicke, André; Janssens, Ewald

    2014-09-18

    The structures of neutral cobalt-doped silicon clusters have been assigned by a combined experimental and theoretical study. Size-selective infrared spectra of neutral Si(n)Co (n = 10-12) clusters are measured using a tunable IR-UV two-color ionization scheme. The experimental infrared spectra are compared with calculated spectra of low-energy structures predicted at the B3P86 level of theory. It is shown that the Si(n)Co (n = 10-12) clusters have endohedral caged structures, where the silicon frameworks prefer double-layered structures encapsulating the Co atom. Electronic structure analysis indicates that the clusters are stabilized by an ionic interaction between the Co dopant atom and the silicon cage due to the charge transfer from the silicon valence sp orbitals to the cobalt 3d orbitals. Strong hybridization between the Co dopant atom and the silicon host quenches the local magnetic moment on the encapsulated Co atom.

  10. Fabrication and characterization of resonant SOI micromechanical silicon sensors based on DRIE micromachining, freestanding release process and silicon direct bonding

    NASA Astrophysics Data System (ADS)

    Gigan, Olivier; Chen, Hua; Robert, Olivier; Renard, Stephane; Marty, Frederic

    2002-11-01

    This paper is dedicated to the fabrication and technological aspect of a silicon microresonator sensor. The entire project includes the fabrication processes, the system modelling/simulation, and the electronic interface. The mechanical model of such resonator is presented including description of frequency stability and Hysterises behaviour of the electrostatically driven resonator. Numeric model and FEM simulations are used to simulate the system dynamic behaviour. The complete fabrication process is based on standard microelectronics technology with specific MEMS technological steps. The key steps are described: micromachining on SOI by Deep Reactive Ion Etching (DRIE), specific release processes to prevent sticking (resist and HF-vapour release process) and collective vacuum encapsulation by Silicon Direct Bonding (SDB). The complete process has been validated and prototypes have been fabricated. The ASIC was designed to interface the sensor and to control the vibration amplitude. This electronic was simulated and designed to work up to 200°C and implemented in a standard 0.6μ CMOS technology. Characterizations of sensor prototypes are done both mechanically and electrostatically. These measurements showed good agreements with theory and FEM simulations.

  11. Design and analysis of a silicon-based antiresonant reflecting optical waveguide chemical sensor

    NASA Astrophysics Data System (ADS)

    Remley, Kate A.; Weisshaar, Andreas

    1996-08-01

    The design of a silicon-based antiresonant reflecting optical waveguide (ARROW) chemical sensor is presented, and its theoretical performance is compared with that of a conventional structure. The use of an ARROW structure permits incorporation of a thick guiding region for efficient coupling to a single-mode fiber. A high-index overlay is added to fine tune the sensitivity of the ARROW chemical sensor. The sensitivity of the sensor is presented, and design trade-offs are discussed.

  12. Silicon Micromachined Sensor for Broadband Vibration Analysis

    NASA Technical Reports Server (NTRS)

    Gutierrez, Adolfo; Edmans, Daniel; Cormeau, Chris; Seidler, Gernot; Deangelis, Dave; Maby, Edward

    1995-01-01

    The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.

  13. Alkaline pH sensor molecules.

    PubMed

    Murayama, Takashi; Maruyama, Ichiro N

    2015-11-01

    Animals can survive only within a narrow pH range. This requires continual monitoring of environmental and body-fluid pH. Although a variety of acidic pH sensor molecules have been reported, alkaline pH sensor function is not well understood. This Review describes neuronal alkaline pH sensors, grouped according to whether they monitor extracellular or intracellular alkaline pH. Extracellular sensors include the receptor-type guanylyl cyclase, the insulin receptor-related receptor, ligand-gated Cl- channels, connexin hemichannels, two-pore-domain K+ channels, and transient receptor potential (TRP) channels. Intracellular sensors include TRP channels and gap junction channels. Identification of molecular mechanisms underlying alkaline pH sensing is crucial for understanding how animals respond to environmental alkaline pH and how body-fluid pH is maintained within a narrow range. © 2015 Wiley Periodicals, Inc.

  14. Optimization and validation of highly selective microfluidic integrated silicon nanowire chemical sensor

    NASA Astrophysics Data System (ADS)

    Ehfaed, Nuri. A. K. H.; Bathmanathan, Shillan A. L.; Dhahi, Th S.; Adam, Tijjani; Hashim, Uda; Noriman, N. Z.

    2017-09-01

    The study proposed characterization and optimization of silicon nanosensor for specific detection of heavy metal. The sensor was fabricated in-house and conventional photolithography coupled with size reduction via dry etching process in an oxidation furnace. Prior to heavy metal heavy metal detection, the capability to aqueous sample was determined utilizing serial DI water at various. The sensor surface was surface modified with Organofunctional alkoxysilanes (3-aminopropyl) triethoxysilane (APTES) to create molecular binding chemistry. This has allowed interaction between heavy metals being measured and the sensor component resulting in increasing the current being measured. Due to its, excellent detection capabilities, this sensor was able to identify different group heavy metal species. The device was further integrated with sub-50 µm for chemical delivery.

  15. Vapor sensors using porous silicon-based optical interferometers

    NASA Astrophysics Data System (ADS)

    Gao, Ting

    The ability to detect or monitor various gases is important for many applications. Smaller, more portable, lower power, and less expensive gas sensors are needed. Porous silicon (PS) has attracted attention for use in such devices due to its unique optical and electronic properties and its large surface area. This thesis describes the preparation and characteristics of vapor sensors using thin PS Fabry-Perot films. The average refractive index of the PS layer increases when the PS film is exposed to analyte vapors, causing the optical fringes to shift to longer wavelengths. Two methods for monitoring the shifts in these optical fringes are explored in this thesis. The first technique measures the reflection spectrum using a white light source, and the second measures the intensity of reflected light using a low-power red diode laser source. The latter method offers a simple, low-cost and reliable transduction mechanism for vapor sensing. A vapor sensor with a detection limit of 250 ppb and a wide dynamic range (five orders of magnitude) is demonstrated. The effect of the PS film thickness and porosity on sensitivity are systematically studied. A model based on the Bruggeman approximation and capillary condensation is proposed to explain this sensing behavior. Two approaches to improve the sensitivity of the PS sensors are explored. In the first, porous Si is chemically modified and the investigation shows that the sensing response varies with different surface properties. In a second study, thin polymer layers are coated on the porous Si substrate to selectively filter solvent vapors. This bi-layer approach is also applied to porous Si layers that have luminescent quantum structures. These latter structures sense adsorbates based on quenching of luminescence from the quantum-confined silicon nanostructures. In the course of this thesis, an anomalous response of ozone-oxidized PS films to water vapor was discovered. The effect was studied by optical interferometry

  16. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

    PubMed Central

    Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

    2013-01-01

    We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures. PMID:24113685

  17. Silicon carbide-based hydrogen gas sensors for high-temperature applications.

    PubMed

    Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

    2013-10-09

    We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

  18. Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode.

    PubMed

    Ahn, Jaehui; Mastro, Michael A; Klein, Paul B; Hite, Jennifer K; Feigelson, Boris; Eddy, Charles R; Kim, Jihyun

    2011-10-24

    The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction. © 2011 Optical Society of America

  19. A photovoltaic self-powered gas sensor based on a single-walled carbon nanotube/Si heterojunction.

    PubMed

    Liu, L; Li, G H; Wang, Y; Wang, Y Y; Li, T; Zhang, T; Qin, S J

    2017-12-07

    We present a novel photovoltaic self-powered gas sensor based on a p-type single-walled carbon nanotube (SWNT) and n-type silicon (n-Si) heterojunction. The energy from visible light suffices to drive the device owing to a built-in electric field (BEF) induced by the differences between the Fermi levels of SWNTs and n-Si.

  20. Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

    NASA Astrophysics Data System (ADS)

    Sakwe, S. A.; Müller, R.; Wellmann, P. J.

    2006-04-01

    We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

  1. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Da Vià, Cinzia; Boscardil, Maurizio; Dalla Betta, GianFranco

    2013-01-01

    3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBLmore » sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.« less

  2. Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Koga, Yoshihiro; Kadono, Takeshi; Shigematsu, Satoshi; Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryousuke; Okuda, Hidehiko; Kurita, Kazunari

    2018-06-01

    We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 × 1016 atoms/cm2. This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

  3. p-type doping by platinum diffusion in low phosphorus doped silicon

    NASA Astrophysics Data System (ADS)

    Ventura, L.; Pichaud, B.; Vervisch, W.; Lanois, F.

    2003-07-01

    In this work we show that the cooling rate following a platinum diffusion strongly influences the electrical conductivity in weakly phosphorus doped silicon. Diffusions were performed at the temperature of 910 °C in the range of 8 32 hours in 0.6, 30, and 60 Ωrm cm phosphorus doped silicon samples. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are cooled slowly. On the other hand, a compensation of the phosphorus donors can only be observed when samples are quenched. One Pt related acceptor deep level at 0.43 eV from the valence band is assumed to be at the origin of the type conversion mechanism. Its concentration increases by lowering the applied cooling rate. A complex formation with fast species such as interstitial Pt atoms or intrinsic point defects is expected. In 0.6 Ωrm cm phosphorus doped silicon, no acceptor deep level in the lower band gap is detected by DLTS measurement. This removes the opportunity of a pairing between phosphorus and platinum and suggests the possibility of a Fermi level controlled complex formation.

  4. Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

    NASA Technical Reports Server (NTRS)

    Biedenbender, M. D.; Kapoor, V. J.

    1990-01-01

    A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

  5. Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

    PubMed Central

    Salah, Tarek Ben; Khachroumi, Sofiane; Morel, Hervé

    2010-01-01

    Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET) as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned. PMID:22315547

  6. Synthesis and characterization of porous silicon gas sensors

    NASA Astrophysics Data System (ADS)

    abbas, Roaa A.; Alwan, Alwan M.; Abdulhamied, Zainab T.

    2018-05-01

    In this work, photo-electrochemical etching process of n-type Silicon of resistivity(10 Ω.cm) and (100) orientation, using two illumination sources IR and violet wavelength in HF acid have been used to produce PSi gas detection device. The fabrication process was carried out at a fixed etching current density of 25mA/cm2 and at different etching time (5, 10, 15 and 20) min and (8, 16, 24, and 30) min. Two configurations of gas sensor configuration planer and sandwich have been made and investigated. The morphological properties have been studied using SEM,the FTIR measurement show that the (Si-Hx) and (Si-O-Si) absorption peak were increases with increasing etching time,and Photoluminescence properties of PSi layer show decrease in the peak of PL peak toward the violet shift. The gas detection process is made on the CO2 gas at different operating temperature and fixed gas concentration. In the planner structure, the gas sensing was measured through, the change in the resistance readout as a function to the exposure time, while for sandwich structure J-V characteristic have been made to determine the sensitivity.

  7. Formation of copper precipitates in silicon

    NASA Astrophysics Data System (ADS)

    Flink, Christoph; Feick, Henning; McHugo, Scott A.; Mohammed, Amna; Seifert, Winfried; Hieslmair, Henry; Heiser, Thomas; Istratov, Andrei A.; Weber, Eicke R.

    1999-12-01

    The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and quench to room temperature. With the Transient Ion Drift (TID) technique on p-type silicon a critical Fermi level position at EC-0.2 eV was found. Only if the Fermi level position, which is determined by the concentrations of the acceptors and the copper donors, surpasses this critical value precipitation takes place. If the Fermi level is below this level the supersaturated interstitial copper diffuses out. An electrostatic precipitation model is introduced that correlates the observed precipitation behavior with the electrical activity of the copper precipitates as detected with Deep Level Transient Spectroscopy (DLTS) on n-type and with Minority Carrier Transient Spectroscopy (MCTS) on p-type silicon.

  8. Fabrication of directional sound sensor by silicon micromachining

    NASA Astrophysics Data System (ADS)

    Touse, Michael; Catterlin, Jeffrey; Sinibaldi, Jose; Karunasiri, Gamani

    2009-03-01

    A directional sound sensor based on the operational principle of the Ormia ochracea fly's hearing organism [1] was fabricated using micro-electromechanical system (MEMS) technology. The fly uses coupled bars hinged at the center to achieve directional sound sensing by monitoring the difference in their vibration amplitudes. The MEMS design employed in this work consisted of a 1x2 square millimeter polysilicon membrane hinged at the center and positioned about 1 micrometer above the substrate using a sacrificial silicon dioxide layer. Finite element analysis of the device shows two primary vibrational mode frequencies, one corresponding to a rocking mode which is highly dependent on angle of incidence, and the other to a bending motion which remains constant through all angles. Using a laser vibrometer to measure response, rocking and bending modes were observed at driving frequencies of 3.0 and 11.4 kHz, respectively, and angular dependence was in close agreement with modeling. [1] R.N. Miles, R. Robert, and R. R. Hoy, ``Mechanically coupled ears for directional hearing in the parasitoid fly Ormia ochracea,'' J. Acoust. Soc. Am., 98 (6), Dec. 1995

  9. Interaction of Light with Metallized Ultrathin Silicon Membrane

    NASA Astrophysics Data System (ADS)

    Shome, Krishanu

    Freestanding metallized structures, a few tens of nanometer thick, show promise in creating flow-through sensors, single molecule detectors and novel solar cells. In this thesis we study test structures that are a step towards creating such devices. Finite- difference time-domain simulations have been used to understand and predict the interaction of light with such devices. Porous nanocrystalline silicon membrane is a novel freestanding layer structure that has been used as a platform to fabricate and study sensors and novel slot nanohole devices. Optical mode studies of the sensing structures, together with the method of fabrication inspired the creation of ultrathin freestanding hydrogenated amorphous silicon p-i-n junctions solar cells. All the freestanding structures used in this thesis are just a few tens of nanometers in thicknesses. In the first part of the thesis the sensing properties of the metallized porous nanocrystalline structure are studied. The surprising blueshift associated with the sensing peak is observed experimentally and predicted theoretically with the help of simulations. Polarization dependence of the membranes is predicted and confirmed for angled deposition of metal on the membranes. In the next part, a novel slot structure is fabricated and modeled to study the slot effect in nanohole metal-insulator-metal structures. Atomic layer deposition of alumina is used to conformally deposit alumina within the nanohole to create the slot structure. Simulation models were used to calculate the lowest modal volume of 4x10-5 mum3 for an optimized structure. In the last part of the thesis, freestanding solar cells are fabricated by effectively replacing the porous nanocrystalline silicon layer of the membranes with a hydrogenated amorphous silicon p-i-n junction with metal layers on both sides of the p-i-n junction. The metal layers act both as electrical contacts as well as mirrors for a Fabry Perot cavity resonator. This helps in tuning the

  10. One-step grafting of temperature-and pH-sensitive (N-vinylcaprolactam-co-4-vinylpyridine) onto silicone rubber for drug delivery

    PubMed Central

    Pino-Ramos, Victor H.; Alvarez-Lorenzo, Carmen; Concheiro, Angel; Bucio, Emilio

    2017-01-01

    Abstract A one-step method was implemented to graft N-vinylcaprolactam (NVCL) and 4-vinylpyridine (4VP) onto silicone rubber (SR) films using gamma radiation in order to endow the silicone surface with temperature- and pH-responsiveness, and give it the ability to host and release diclofenac in a controlled manner and thus prevent bacterial adhesion. The effects of radiation conditions (e.g., dose and monomers concentration) on the grafting percentage were evaluated, and the modified films were characterized by means of FTIR-ATR, Raman spectroscopy, calorimetry techniques (DSC and TGA) and contact angle measurements. The films responsiveness to stimuli was evaluated by recording the swelling degree of pristine and modified SR in buffer solutions (critical pH point) and as a function of changes in temperature (Upper Critical Solution Temperature, UCST). The graft copolymers of SR-g-(NVCL-co-4VP) showed good cytocompatibility against fibroblast cells for prolonged times, could host diclofenac and release it in a sustained manner for up to 24 h, and exhibited bacteriostatic activity when challenged against Escherichia coli. PMID:29491777

  11. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  12. 2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit.

    PubMed

    Wang, Ruijun; Sprengel, Stephan; Boehm, Gerhard; Muneeb, Muhammad; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

    2016-09-05

    Heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on a silicon waveguide circuit emitting in the 2.3 µm wavelength range are demonstrated. The devices consist of a "W"-shaped InGaAs/GaAsSb multi-quantum-well gain section, III-V/silicon spot size converters and two silicon Bragg grating reflectors to form the laser cavity. In continuous-wave (CW) operation, we obtain a threshold current density of 2.7 kA/cm2 and output power of 1.3 mW at 5 °C for 2.35 μm lasers. The lasers emit over 3.7 mW of peak power with a threshold current density of 1.6 kA/cm2 in pulsed regime at room temperature. This demonstration of heterogeneously integrated lasers indicates that the material system and heterogeneous integration method are promising to realize fully integrated III-V/silicon photonics spectroscopic sensors in the 2 µm wavelength range.

  13. Field effect sensors for PCR applications

    NASA Astrophysics Data System (ADS)

    Taing, Meng-Houit; Sweatman, Denis R.

    2004-03-01

    The use of field effect sensors for biological and chemical sensing is widely employed due to its ability to make detections based on charge and surface potential. Because proteins and DNA almost always carry a charge [1], silicon can be used to micro fabricate such a sensor. The EIS structure (Electrolyte on Insulator on Silicon) provides a novel, label-free and simple to fabricate way to make a field effect DNA detection sensor. The sensor responds to fluctuating capacitance caused by a depletion layer thickness change at the surface of the silicon substrate through DNA adsorption onto the dielectric oxide/PLL (Poly-L-Lysine) surface. As DNA molecules diffuse to the sensor surface, they are bound to their complimentary capture probes deposited on the surface. The negative charge exhibited by the DNA forces negative charge carriers in the substrate to move away from the surface. This causes an n-type depletion layer substrate to thicken and a p-type to thin. The depletion layer thickness can be measured by its capacitance using an LCR meter. This experiment is conducted using the ConVolt (constant voltage) approach. Nucleic acids are amplified by an on chip PCR (Polymerase Chain Reaction) system and then fed into the sensor. The low ionic solution strength will ensure that counter-ions do not affect the sensor measurements. The sensor surface contains capture probes that bind to the pathogen. The types of pathogens we"ll be detecting include salmonella, campylobacter and E.Coli DNA. They are held onto the sensor surface by the positively charged Poly-L-Lysine layer. The electrolyte is biased through a pseudo-reference electrode. Pseudo reference electrodes are usually made from metals such as Platinum or Silver. The problem associated with "floating" biasing electrodes is they cannot provide stable biasing potentials [2]. They drift due to surface charging effects and trapped charges on the surface. To eliminate this, a differential system consisting of 2 sensors

  14. A miniature integrated multimodal sensor for measuring pH, EC and temperature for precision agriculture.

    PubMed

    Futagawa, Masato; Iwasaki, Taichi; Murata, Hiroaki; Ishida, Makoto; Sawada, Kazuaki

    2012-01-01

    Making several simultaneous measurements with different kinds of sensors at the same location in a solution is difficult because of crosstalk between the sensors. In addition, because the conditions at different locations in plant beds differ, in situ measurements in agriculture need to be done in small localized areas. We have fabricated a multimodal sensor on a small Si chip in which a pH sensor was integrated with electrical conductivity (EC) and temperature sensors. An ISFET with a Si(3)N(4) membrane was used for the pH sensor. For the EC sensor, the electrical conductivity between platinum electrodes was measured, and the temperature sensor was a p-n junction diode. These are some of the most important measurements required for controlling the conditions in plant beds. The multimodal sensor can be inserted into a plant bed for in situ monitoring. To confirm the absence of crosstalk between the sensors, we made simultaneous measurements of pH, EC, and temperature of a pH buffer solution in a plant bed. When the solution was diluted with hot or cold water, the real time measurements showed changes to the EC and temperature, but no change in pH. We also demonstrated that our sensor was capable of simultaneous in situ measurements in rock wool without being affected by crosstalk.

  15. A Miniature Integrated Multimodal Sensor for Measuring pH, EC and Temperature for Precision Agriculture

    PubMed Central

    Futagawa, Masato; Iwasaki, Taichi; Murata, Hiroaki; Ishida, Makoto; Sawada, Kazuaki

    2012-01-01

    Making several simultaneous measurements with different kinds of sensors at the same location in a solution is difficult because of crosstalk between the sensors. In addition, because the conditions at different locations in plant beds differ, in situ measurements in agriculture need to be done in small localized areas. We have fabricated a multimodal sensor on a small Si chip in which a pH sensor was integrated with electrical conductivity (EC) and temperature sensors. An ISFET with a Si3N4 membrane was used for the pH sensor. For the EC sensor, the electrical conductivity between platinum electrodes was measured, and the temperature sensor was a p-n junction diode. These are some of the most important measurements required for controlling the conditions in plant beds. The multimodal sensor can be inserted into a plant bed for in situ monitoring. To confirm the absence of crosstalk between the sensors, we made simultaneous measurements of pH, EC, and temperature of a pH buffer solution in a plant bed. When the solution was diluted with hot or cold water, the real time measurements showed changes to the EC and temperature, but no change in pH. We also demonstrated that our sensor was capable of simultaneous in situ measurements in rock wool without being affected by crosstalk. PMID:22969403

  16. Uncertainty of a hybrid surface temperature sensor for silicon wafers and comparison with an embedded thermocouple.

    PubMed

    Iuchi, Tohru; Gogami, Atsushi

    2009-12-01

    We have developed a user-friendly hybrid surface temperature sensor. The uncertainties of temperature readings associated with this sensor and a thermocouple embedded in a silicon wafer are compared. The expanded uncertainties (k=2) of the hybrid temperature sensor and the embedded thermocouple are 2.11 and 2.37 K, respectively, in the temperature range between 600 and 1000 K. In the present paper, the uncertainty evaluation and the sources of uncertainty are described.

  17. Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

    PubMed Central

    Mostafa, Ahmad; Medraj, Mamoun

    2017-01-01

    Fabrication of solar and electronic silicon wafers involves direct contact between solid, liquid and gas phases at near equilibrium conditions. Understanding of the phase diagrams and thermochemical properties of the Si-dopant binary systems is essential for providing processing conditions and for understanding the phase formation and transformation. In this work, ten Si-based binary phase diagrams, including Si with group IIIA elements (Al, B, Ga, In and Tl) and with group VA elements (As, Bi, N, P and Sb), have been reviewed. Each of these systems has been critically discussed on both aspects of phase diagram and thermodynamic properties. The available experimental data and thermodynamic parameters in the literature have been summarized and assessed thoroughly to provide consistent understanding of each system. Some systems were re-calculated to obtain a combination of the best evaluated phase diagram and a set of optimized thermodynamic parameters. As doping levels of solar and electronic silicon are of high technological importance, diffusion data has been presented to serve as a useful reference on the properties, behavior and quantities of metal impurities in silicon. This paper is meant to bridge the theoretical understanding of phase diagrams with the research and development of solar-grade silicon production, relying on the available information in the literature and our own analysis. PMID:28773034

  18. A time-based front-end ASIC for the silicon micro strip sensors of the bar PANDA Micro Vertex Detector

    NASA Astrophysics Data System (ADS)

    Di Pietro, V.; Brinkmann, K.-Th.; Riccardi, A.; Ritman, J.; Rivetti, A.; Rolo, M. D.; Stockmanns, T.; Zambanini, A.

    2016-03-01

    The bar PANDA (Antiproton Annihilation at Darmstadt) experiment foresees many detectors for tracking, particle identification and calorimetry. Among them, the innermost is the MVD (Micro Vertex Detector) responsible for a precise tracking and the reconstruction of secondary vertices. This detector will be built from both hybrid pixel (two inner barrels and six forward disks) and double-sided micro strip (two outer barrels and outer rim of the last two disks) silicon sensors. A time-based approach has been chosen for the readout ASIC of the strip sensors. The PASTA (bar PANDA Strip ASIC) chip aims at high resolution time-stamping and charge information through the Time over Threshold (ToT) technique. It benefits from a Time to Digital Converter (TDC) allowing a time bin width down to 50 ps. The analog front-end was designed to serve both n-type and p-type strips and the performed simulations show remarkable performances in terms of linearity and electronic noise. The TDC consists of an analog interpolator, a digital local controller, and a digital global controller as the common back-end for all of the 64 channels.

  19. Silicon in Imperata cylindrica (L.) P. Beauv: content, distribution, and ultrastructure.

    PubMed

    Rufo, Lourdes; Franco, Alejandro; de la Fuente, Vicenta

    2014-07-01

    Silicon concentration, distribution, and ultrastructure of silicon deposits in the Poaceae Imperata cylindrica (L.) P. Beauv. have been studied. This grass, known for its medicinal uses and also for Fe hyperaccumulation and biomineralization capacities, showed a concentration of silicon of 13,705 ± 9,607 mg/kg dry weight. Silicon was found as an important constituent of cell walls of the epidermis of the whole plant. Silica deposits were found in silica bodies, endodermis, and different cells with silicon-collapsed lumen as bulliforms, cortical, and sclerenchyma cells. Transmission electron microscope observations of these deposits revealed an amorphous material of an ultrastructure similar to that previously reported in silica bodies of other Poaceae.

  20. Organic-on-silicon complementary metal-oxide-semiconductor colour image sensors.

    PubMed

    Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

    2015-01-12

    Complementary metal-oxide-semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor.

  1. Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors

    PubMed Central

    Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

    2015-01-01

    Complementary metal–oxide–semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor. PMID:25578322

  2. Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

    NASA Astrophysics Data System (ADS)

    Bergauer, T.; Dragicevic, M.; Frey, M.; Grabiec, P.; Grodner, M.; Hänsel, S.; Hartmann, F.; Hoffmann, K.-H.; Hrubec, J.; Krammer, M.; Kucharski, K.; Macchiolo, A.; Marczewski, J.

    2009-01-01

    Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

  3. Spiral-path high-sensitivity silicon photonic wire molecular sensor with temperature-independent response.

    PubMed

    Densmore, A; Xu, D-X; Janz, S; Waldron, P; Mischki, T; Lopinski, G; Delâge, A; Lapointe, J; Cheben, P; Lamontagne, B; Schmid, J H

    2008-03-15

    We demonstrate a new silicon photonic wire waveguide evanescent field (PWEF) sensor that exploits the strong evanescent field of the transverse magnetic mode of this high-index-contrast, submicrometer-dimension waveguide. High sensitivity is achieved by using a 2 mm long double-spiral waveguide structure that fits within a compact circular area of 150 microm diameter, facilitating compatibility with commercial spotting apparatus and the fabrication of densely spaced sensor arrays. By incorporating the PWEF sensor element into a balanced waveguide Mach-Zehnder interferometer circuit, a minimum detectable mass of approximately 10 fg of streptavidin protein is demonstrated with near temperature-independent response.

  4. Modeling the effect of 1 MeV electron irradiation on the performance of n+-p-p+ silicon space solar cells

    NASA Astrophysics Data System (ADS)

    Hamache, Abdelghani; Sengouga, Nouredine; Meftah, Afak; Henini, Mohamed

    2016-06-01

    Energetic particles such as electrons and protons induce severe degradation on the performance of solar cells used to power satellites and space vehicles. This degradation is usually attributed to lattice damage in the active region of the solar cell. One of the phenomena observed in silicon solar cells exposed to 1 MeV electron irradiation is the anomalous degradation of the short circuit current. It initially decreases followed by a recovery before falling again with increasing electron fluence. This behavior is usually attributed to type conversion of the solar cell active region. The other figures of merit, on the other hand, decrease monotonically. In this work numerical simulator SCAPS (Solar Cell Capacitance Simulator) is used to elucidate this phenomenon. The current-voltage characteristics of a Si n+-p-p+ structure are calculated under air mass zero spectrum with the fluence of 1 MeV electrons as a variable parameter. The effect of irradiation on the solar cell is simulated by a set of defects of which the energy levels lie deep in energy gap of silicon (much larger than the characteristic thermal energy kT far from either the conduction or valence band). Although several types of deep levels are induced by irradiation including deep donors (exchange electrons mainly with the conduction band), deep acceptors (exchange electrons mainly with the valence band) and/or generation-recombination centers (exchange electrons with both the conduction and valence bands), it was found that, only one of them (the shallowest donor) is responsible for the anomalous degradation of the short circuit current. It will be also shown, by calculating the free charge carrier profile in the active region, that this behavior is not related to type conversion but to a lateral widening of the space charge region.

  5. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    NASA Astrophysics Data System (ADS)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  6. Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

    PubMed

    Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

    2018-03-27

    There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

  7. Solution immersed silicon (SIS)-based biosensors: a new approach in biosensing.

    PubMed

    Diware, M S; Cho, H M; Chegal, W; Cho, Y J; Jo, J H; O, S W; Paek, S H; Yoon, Y H; Kim, D

    2015-02-07

    A novel, solution immersed silicon (SIS)-based sensor has been developed which employs the non-reflecting condition (NRC) for a p-polarized wave. The SIS sensor's response is almost independent of change in the refractive index (RI) of a buffer solution (BS) which makes it capable of measuring low-concentration and/or low-molecular-weight compounds.

  8. A genetically-encoded chloride and pH sensor for dissociating ion dynamics in the nervous system.

    PubMed

    Raimondo, Joseph V; Joyce, Bradley; Kay, Louise; Schlagheck, Theresa; Newey, Sarah E; Srinivas, Shankar; Akerman, Colin J

    2013-01-01

    Within the nervous system, intracellular Cl(-) and pH regulate fundamental processes including cell proliferation, metabolism, synaptic transmission, and network excitability. Cl(-) and pH are often co-regulated, and network activity results in the movement of both Cl(-) and H(+). Tools to accurately measure these ions are crucial for understanding their role under physiological and pathological conditions. Although genetically-encoded Cl(-) and pH sensors have been described previously, these either lack ion specificity or are unsuitable for neuronal use. Here we present ClopHensorN-a new genetically-encoded ratiometric Cl(-) and pH sensor that is optimized for the nervous system. We demonstrate the ability of ClopHensorN to dissociate and simultaneously quantify Cl(-) and H(+) concentrations under a variety of conditions. In addition, we establish the sensor's utility by characterizing activity-dependent ion dynamics in hippocampal neurons.

  9. High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

    PubMed

    Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

    2014-06-11

    The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.

  10. Development of in situ CO2 and pH sensor for AUVs and ROVs

    NASA Astrophysics Data System (ADS)

    Nakano, Yoshiyuki; Kimoto, Hideshi; Miwa, Tetsuya; Yoshida, Hiroshi

    2013-04-01

    Japan Agency for Marine-Earth Science and Technology (JAMSTEC) has been developing two-type autonomous underwater vehicles (AUVs): a cruising AUV and a working AUV, since October 2010. These vehicles will perform carbon dioxide (CO2) and pH observations to explore hydrothermal plume on seabed mineral resources and to monitor a leak of CO2 in carbon capture and storage (CCS) up to depth of 3,000 meters. We here have been developing the compact in situ CO2 and pH sensor (Hybrid CO2-pH sensor: HCS) for the AUVs to obtain vertical and horizontal distributions of CO2 and pH. The HCS consists of an aluminum pressure housing (diameter 84 mm, length 570 mm, weight 4 kg) and an acrylic silicon-oil filled, pressure-compensated vessel (diameter 90 mm, length 355 mm, weight 2 kg) containing valves and pump unit. The HCS is also useful for the observation by remotely operated vehicles (ROVs). The measured data were transmitted to the AUVs or ROVs by serial communications. We can monitor the data of in situ pCO2, pH and so on in real time on board. The measurement principle for the CO2 sensor is based on spectrophotometry. The pCO2 is calculated from the optical absorbance of the pH indicator solution equilibrated with CO2 in seawater through a gas permeable membrane. On the other hand, we adopt potentiometric analysis using original glass and reference electrodes as a pH sensor because of the most commonly used technique for sea water pH measurements and high-speed response (within 20 seconds). From simultaneously measured data of in situ pCO2 and pH, we can also calculate dissolved inorganic carbon (DIC) and total alkalinity (TA) as other carbonate species in the ocean. The resolutions of HCS are 1 μatm for pCO2 and 0.001 pH. In the laboratory experiment, the HCS obtained precisions within 3 μatm and within 0.01 pH, respectively. Our first in situ observational test of the HSC with cruising AUV was made in the coast of the Japan Sea last August. And also first in situ test

  11. X-Ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well

    NASA Astrophysics Data System (ADS)

    Takahashi, Hiroshi; Hashizume, Tamotsu; Hasegawa, Hideki

    1999-02-01

    In order to understand and optimize a novel oxide-free InP passivation process using a silicon surface quantum well, a detailed in situ X-ray photoelectron spectroscopy (XPS) and ultrahigh vacuum (UHV) contactless capacitance-voltage (C-V) study of the interface was carried out. Calculation of quantum levels in the silicon quantum well was performed on the basis of the band lineup of the strained Si3N4/Si/InP interface and the result indicated that the interface should become free of gap states when the silicon layer thickness is below 5 Å. Experimentally, such a delicate Si3N4/Si/InP structure was realized by partial nitridation of a molecular beam epitaxially (MBE) grown pseudomorphic silicon layer using an electron cyclotron resonance (ECR) N2 plasma. The progress of nitridation was investigated in detail by angle-resolved XPS. A newly developed UHV contactless C-V method realized in situ characterization of surface electronic properties of InP at each processing step for passivation. It was found that the interface state density decreased substantially into the 1010 cm-2 eV-1 range by optimizing the nitridation process of the silicon layer. It was concluded that both the surface bond termination and state removal by quantum confinement are responsible for the NSS reduction.

  12. Microdistribution of oxygen in silicon

    NASA Technical Reports Server (NTRS)

    Murgai, A.; Chi, J. Y.; Gatos, H. C.

    1980-01-01

    The microdistribution of oxygen in Czochralskii-grown, p-type silicon crystals was determined by using the SEM in the EBIC mode in conjunction with spreading resistance measurements. When the conductivity remained p-type, bands of contrast were observed in the EBIC image which corresponded to maxima in resistivity. When at the oxygen concentration maxima the oxygen donor concentration exceeded the p-type dopant concentration, an inversion of the conductivity occurred. It resulted in the formation of p-n junctions in a striated configuration and the local inversion of the EBIC image contrast. By heat-treating silicon at 1000 C prior to the activation of oxygen donors, some silicon-oxygen micro-precipitates were observed in the EBIC image within the striated oxygen concentration maxima.

  13. Achieving thermography with a thermal security camera using uncooled amorphous silicon microbolometer image sensors

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Wei; Tesdahl, Curtis; Owens, Jim; Dorn, David

    2012-06-01

    Advancements in uncooled microbolometer technology over the last several years have opened up many commercial applications which had been previously cost prohibitive. Thermal technology is no longer limited to the military and government market segments. One type of thermal sensor with low NETD which is available in the commercial market segment is the uncooled amorphous silicon (α-Si) microbolometer image sensor. Typical thermal security cameras focus on providing the best image quality by auto tonemaping (contrast enhancing) the image, which provides the best contrast depending on the temperature range of the scene. While this may provide enough information to detect objects and activities, there are further benefits of being able to estimate the actual object temperatures in a scene. This thermographic ability can provide functionality beyond typical security cameras by being able to monitor processes. Example applications of thermography[2] with thermal camera include: monitoring electrical circuits, industrial machinery, building thermal leaks, oil/gas pipelines, power substations, etc...[3][5] This paper discusses the methodology of estimating object temperatures by characterizing/calibrating different components inside a thermal camera utilizing an uncooled amorphous silicon microbolometer image sensor. Plots of system performance across camera operating temperatures will be shown.

  14. Biotin-Streptavidin Binding Interactions of Dielectric Filled Silicon Bulk Acoustic Resonators for Smart Label-Free Biochemical Sensor Applications

    PubMed Central

    Heidari, Amir; Yoon, Yong-Jin; Park, Woo-Tae; Su, Pei-Chen; Miao, Jianmin; Lin, Julius Tsai Ming; Park, Mi Kyoung

    2014-01-01

    Sensor performance of a dielectric filled silicon bulk acoustic resonator type label-free biosensor is verified with biotin-streptavidin binding interactions as a model system. The mass sensor is a micromachined silicon square plate with a dielectric filled capacitive excitation mechanism. The resonance frequency of the biotin modified resonator decreased 315 ppm when exposed to streptavidin solution for 15 min with a concentration of 10−7 M, corresponding to an added mass of 3.43 ng on the resonator surface. An additional control is added by exposing a bovine serum albumin (BSA)-covered device to streptavidin in the absence of the attached biotin. No resonance frequency shift was observed in the control experiment, which confirms the specificity of the detection. The sensor-to-sensor variability is also measured to be 4.3%. Consequently, the developed sensor can be used to observe in biotin-streptavidin interaction without the use of labelling or molecular tags. In addition, biosensor can be used in a variety of different immunoassay tests. PMID:24608003

  15. Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

    NASA Technical Reports Server (NTRS)

    Hunter, G. W.; Xu, J.; Neudeck, P. G.; Lukco, D.; Trunek, A.; Spry, D.; Lampard, P.; Androjna, D.; Makel, D.; Ward, B.

    2007-01-01

    Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

  16. Miniaturized force/torque sensor for in vivo measurements of tissue characteristics.

    PubMed

    Hessinger, M; Pilic, T; Werthschutzky, R; Pott, P P

    2016-08-01

    This paper presents the development of a surgical instrument to measure interaction forces/torques with organic tissue during operation. The focus is on the design progress of the sensor element, consisting of a spoke wheel deformation element with a diameter of 12 mm and eight inhomogeneous doped piezoresistive silicon strain gauges on an integrated full-bridge assembly with an edge length of 500 μm. The silicon chips are contacted to flex-circuits via flip chip and bonded on the substrate with a single component adhesive. A signal processing board with an 18 bit serial A/D converter is integrated into the sensor. The design concept of the handheld surgical sensor device consists of an instrument coupling, the six-axis sensor, a wireless communication interface and battery. The nominal force of the sensing element is 10 N and the nominal torque is 1 N-m in all spatial directions. A first characterization of the force sensor results in a maximal systematic error of 4.92 % and random error of 1.13 %.

  17. Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

    PubMed

    Ding, Xiangzhen; Yang, Shuai; Miao, Bin; Gu, Le; Gu, Zhiqi; Zhang, Jian; Wu, Baojun; Wang, Hong; Wu, Dongmin; Li, Jiadong

    2018-04-18

    A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

  18. Microhardness of carbon-doped (111) p-type Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Danyluk, S.; Lim, D. S.; Kalejs, J.

    1985-01-01

    The effect of carbon on (111) p-type Czochralski silicon is examined. The preparation of the silicon and microhardness test procedures are described, and the equation used to determine microhardness from indentations in the silicon wafers is presented. The results indicate that as the carbon concentration in the silicon increases the microhardness increases. The linear increase in microhardness is the result of carbon hindering dislocation motion, and the effect of temperature on silicon deformation and dislocation mobility is explained. The measured microhardness was compared with an analysis which is based on dislocation pinning by carbon; a good correlation was observed. The Labusch model for the effect of pinning sites on dislocation motion is given.

  19. Influence of oxygen-vacancy complex /A center/ on piezoresistance of n-type silicon.

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Loggins, C. D., Jr.

    1972-01-01

    Changes in both magnitude and temperature dependence of the piezoresistance of electron-irradiated n-type silicon, induced by the latter's oxygen-vacancy complex (A center), are shown to be due to the fact that the presence of the A center causes the total conduction-band electron concentration to change with an applied stress. This change in electron concentration leads to an additional piezoresistance contribution that is expected to be important in certain many-valley semiconductors. This offers the possibility of tailoring the thermal variations of semiconductor mechanical sensors to more desirable values over limited temperature ranges.

  20. Characterization of Si p-i-n diode for scanning transmission ion microanalysis of biological samples

    NASA Astrophysics Data System (ADS)

    Devès, G.; Matsuyama, S.; Barbotteau, Y.; Ishii, K.; Ortega, R.

    2006-05-01

    The performance of a silicon p-i-n diode (Hamamatsu S1223-01) for the detection of charged particles was investigated and compared with the response of a standard passivated implanted planar silicon (PIPS) detector. The photodiode was characterized by ion beam induced charge collection with a micrometer spatial resolution using proton and alpha particle beams in the 1-3MeV energy range. Results indicate that homogeneity, energy resolution, and reproducibility of detection of charged particles enable the use of the low cost silicon p-i-n device as a replacement of conventional PIPS detector during scanning transmission ion microanalysis experiments. The Si p-i-n diode detection setup was successfully applied to scanning transmission ion microscopy determination of subcellular compartments on human cancer cultured cells.

  1. Study on Silicon Microstructure Processing Technology Based on Porous Silicon

    NASA Astrophysics Data System (ADS)

    Shang, Yingqi; Zhang, Linchao; Qi, Hong; Wu, Yalin; Zhang, Yan; Chen, Jing

    2018-03-01

    Aiming at the heterogeneity of micro - sealed cavity in silicon microstructure processing technology, the technique of preparing micro - sealed cavity of porous silicon is proposed. The effects of different solutions, different substrate doping concentrations, different current densities, and different etching times on the rate, porosity, thickness and morphology of the prepared porous silicon were studied. The porous silicon was prepared by different process parameters and the prepared porous silicon was tested and analyzed. For the test results, optimize the process parameters and experiments. The experimental results show that the porous silicon can be controlled by optimizing the parameters of the etching solution and the doping concentration of the substrate, and the preparation of porous silicon with different porosity can be realized by different doping concentration, so as to realize the preparation of silicon micro-sealed cavity, to solve the sensor sensitive micro-sealed cavity structure heterogeneous problem, greatly increasing the application of the sensor.

  2. Vibration sensors

    NASA Astrophysics Data System (ADS)

    Gupta, Amita; Singh, Ranvir; Ahmad, Amir; Kumar, Mahesh

    2003-10-01

    Today, vibration sensors with low and medium sensitivities are in great demand. Their applications include robotics, navigation, machine vibration monitoring, isolation of precision equipment & activation of safety systems e.g. airbags in automobiles. Vibration sensors have been developed at SSPL, using silicon micromachining to sense vibrations in a system in the 30 - 200 Hz frequency band. The sensing element in the silicon vibration sensor is a seismic mass suspended by thin silicon hinges mounted on a metallized glass plate forming a parallel plate capacitor. The movement of the seismic mass along the vertical axis is monitored to sense vibrations. This is obtained by measuring the change in capacitance. The movable plate of the parallel plate capacitor is formed by a block connected to a surrounding frame by four cantilever beams located on sides or corners of the seismic mass. This element is fabricated by silicon micromachining. Several sensors in the chip sizes 1.6 cm x 1.6 cm, 1 cm x 1 cm and 0.7 cm x 0.7 cm have been fabricated. Work done on these sensors, techniques used in processing and silicon to glass bonding are presented in the paper. Performance evaluation of these sensors is also discussed.

  3. Process for forming a porous silicon member in a crystalline silicon member

    DOEpatents

    Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

    1999-01-01

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

  4. Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

    NASA Astrophysics Data System (ADS)

    Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

    2017-10-01

    Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

  5. Polycrystalline silicon ion sensitive field effect transistors

    NASA Astrophysics Data System (ADS)

    Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H.; Inoue, S.; Shimoda, T.

    2005-01-01

    We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54mV /pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM.

  6. 1 kHz 2D Visual Motion Sensor Using 20 × 20 Silicon Retina Optical Sensor and DSP Microcontroller.

    PubMed

    Liu, Shih-Chii; Yang, MinHao; Steiner, Andreas; Moeckel, Rico; Delbruck, Tobi

    2015-04-01

    Optical flow sensors have been a long running theme in neuromorphic vision sensors which include circuits that implement the local background intensity adaptation mechanism seen in biological retinas. This paper reports a bio-inspired optical motion sensor aimed towards miniature robotic and aerial platforms. It combines a 20 × 20 continuous-time CMOS silicon retina vision sensor with a DSP microcontroller. The retina sensor has pixels that have local gain control and adapt to background lighting. The system allows the user to validate various motion algorithms without building dedicated custom solutions. Measurements are presented to show that the system can compute global 2D translational motion from complex natural scenes using one particular algorithm: the image interpolation algorithm (I2A). With this algorithm, the system can compute global translational motion vectors at a sample rate of 1 kHz, for speeds up to ±1000 pixels/s, using less than 5 k instruction cycles (12 instructions per pixel) per frame. At 1 kHz sample rate the DSP is 12% occupied with motion computation. The sensor is implemented as a 6 g PCB consuming 170 mW of power.

  7. Continuous pH monitoring in a perfused bioreactor system using an optical pH sensor

    NASA Technical Reports Server (NTRS)

    Jeevarajan, Antony S.; Vani, Sundeep; Taylor, Thomas D.; Anderson, Melody M.

    2002-01-01

    Monitoring and regulating the pH of the solution in a bioprocess is one of the key steps in the success of bioreactor operation. An in-line optical pH sensor, based on the optical absorption properties of phenol red present in the medium, was developed and tested in this work for use in NASA space bioreactors based on a rotating wall-perfused vessel system supporting a baby hamster kidney (BHK-21) cell culture. The sensor was tested over three 30-day and one 124-day cell runs. The pH sensor initially was calibrated and then used during the entire cell culture interval. The pH reported by the sensor was compared to that measured by a fiber optically coupled Shimadzu spectrophotometer and a blood gas analyzer. The maximum standard error of prediction for all the four cell runs for development pH sensor against BGA was +/-0.06 pH unit and for the fiber optically coupled Shimadzu spectrophotometer against the blood gas analyzer was +/-0.05 pH unit. The pH sensor system performed well without need of recalibration for 124 days. Copyright 2002 Wiley Periodicals, Inc.

  8. NANOSTRUCTURED POROUS SILICON AND LUMINESCENT POLYSILOLES AS CHEMICAL SENSORS FOR CARCINOGENIC CHROMIUM(VI) AND ARSENIC(V)

    EPA Science Inventory

    The chief goal is to develop new selective solid state sensors for carcinogenic and toxic chromium(VI) and arsenic(V) in water based on redox quenching of the luminescence from nanostructured porous silicon and polysiloles.

  9. Formation mechanisms of Si3N4 and Si2N2O in silicon powder nitridation

    NASA Astrophysics Data System (ADS)

    Yao, Guisheng; Li, Yong; Jiang, Peng; Jin, Xiuming; Long, Menglong; Qin, Haixia; Kumar, R. Vasant

    2017-04-01

    Commercial silicon powders are nitrided at constant temperatures (1453 K; 1513 K; 1633 K; 1693 K). The X-ray diffraction results show that small amounts of Si3N4 and Si2N2O are formed as the nitridation products in the samples. Fibroid and short columnar Si3N4 are detected in the samples. The formation mechanisms of Si3N4 and Si2N2O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O2 in N2 atmosphere, forming a thin film of SiO2 on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO2 film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO2 film will crack, and N2 is infiltrated into the central section of the sample through cracks, generating Si2N2O and short columnar Si3N4 in situ. At the same time, metastable SiO(g) reacts with N2 and form fibroid Si3N4. In the regions where the oxygen partial pressure is high, Si3N4 is oxidized into Si2N2O.

  10. Silicon ball grid array chip carrier

    DOEpatents

    Palmer, David W.; Gassman, Richard A.; Chu, Dahwey

    2000-01-01

    A ball-grid-array integrated circuit (IC) chip carrier formed from a silicon substrate is disclosed. The silicon ball-grid-array chip carrier is of particular use with ICs having peripheral bond pads which can be reconfigured to a ball-grid-array. The use of a semiconductor substrate such as silicon for forming the ball-grid-array chip carrier allows the chip carrier to be fabricated on an IC process line with, at least in part, standard IC processes. Additionally, the silicon chip carrier can include components such as transistors, resistors, capacitors, inductors and sensors to form a "smart" chip carrier which can provide added functionality and testability to one or more ICs mounted on the chip carrier. Types of functionality that can be provided on the "smart" chip carrier include boundary-scan cells, built-in test structures, signal conditioning circuitry, power conditioning circuitry, and a reconfiguration capability. The "smart" chip carrier can also be used to form specialized or application-specific ICs (ASICs) from conventional ICs. Types of sensors that can be included on the silicon ball-grid-array chip carrier include temperature sensors, pressure sensors, stress sensors, inertia or acceleration sensors, and/or chemical sensors. These sensors can be fabricated by IC processes and can include microelectromechanical (MEM) devices.

  11. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, James L.

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  12. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  13. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    PubMed

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  14. Cryogenic High Pressure Sensor Module

    NASA Technical Reports Server (NTRS)

    Chapman, John J. (Inventor); Shams, Qamar A. (Inventor); Powers, William T. (Inventor)

    1999-01-01

    A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

  15. Cryogenic, Absolute, High Pressure Sensor

    NASA Technical Reports Server (NTRS)

    Chapman, John J. (Inventor); Shams. Qamar A. (Inventor); Powers, William T. (Inventor)

    2001-01-01

    A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

  16. High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing

    PubMed Central

    Reddy, Bobby; Dorvel, Brian R.; Go, Jonghyun; Nair, Pradeep R.; Elibol, Oguz H.; Credo, Grace M.; Daniels, Jonathan S.; Chow, Edmond K. C.; Su, Xing; Varma, Madoo; Alam, Muhammad A.

    2011-01-01

    Over the last decade, field-effect transistors (FETs) with nanoscale dimensions have emerged as possible label-free biological and chemical sensors capable of highly sensitive detection of various entities and processes. While significant progress has been made towards improving their sensitivity, much is yet to be explored in the study of various critical parameters, such as the choice of a sensing dielectric, the choice of applied front and back gate biases, the design of the device dimensions, and many others. In this work, we present a process to fabricate nanowire and nanoplate FETs with Al2O3 gate dielectrics and we compare these devices with FETs with SiO2 gate dielectrics. The use of a high-k dielectric such as Al2O3 allows for the physical thickness of the gate dielectric to be thicker without losing sensitivity to charge, which then reduces leakage currents and results in devices that are highly robust in fluid. This optimized process results in devices stable for up to 8 h in fluidic environments. Using pH sensing as a benchmark, we show the importance of optimizing the device bias, particularly the back gate bias which modulates the effective channel thickness. We also demonstrate that devices with Al2O3 gate dielectrics exhibit superior sensitivity to pH when compared to devices with SiO2 gate dielectrics. Finally, we show that when the effective electrical silicon channel thickness is on the order of the Debye length, device response to pH is virtually independent of device width. These silicon FET sensors could become integral components of future silicon based Lab on Chip systems. PMID:21203849

  17. Synthesis and characterization of silicon nanorod on n-type porous silicon.

    PubMed

    Behzad, Kasra; Mat Yunus, Wan Mahmood; Bahrami, Afarin; Kharazmi, Alireza; Soltani, Nayereh

    2016-03-20

    This work reports a new method for growing semiconductor nanorods on a porous silicon substrate. After preparation of n-type porous silicon samples, a thin layer of gold was deposited on them. Gold deposited samples were annealed at different temperatures. The structural, thermal, and optical properties of the samples were studied using a field emission scanning electron microscope (FESEM), photoacoustic spectroscopy, and photoluminescence spectroscopy, respectively. FESEM analysis revealed that silicon nanorods of different sizes grew on the annealed samples. Thermal behavior of the samples was studied using photoacoustic spectroscopy. Photoluminescence spectroscopy showed that the emission peaks were degraded by gold deposition and attenuated for all samples by annealing.

  18. Integrated thin film Si fluorescence sensor coupled with a GaN microLED for microfluidic point-of-care testing

    NASA Astrophysics Data System (ADS)

    Robbins, Hannah; Sumitomo, Keiko; Tsujimura, Noriyuki; Kamei, Toshihiro

    2018-02-01

    An integrated fluorescence sensor consisting of a SiO2/Ta2O5 multilayer optical interference filter and hydrogenated amorphous silicon (a-Si:H) pin photodiode was coupled with a GaN microLED to construct a compact fluorescence detection module for point-of-care microfluidic biochemical analysis. The combination of the small size of the GaN microLED and asymmetric microlens resulted in a focal spot diameter of the excitation light of approximately 200 µm. The limit of detection of the sensor was as high as 36 nM for fluorescein solution flowing in a 100 µm deep microfluidic channel because of the lack of directionality of the LED light. Nevertheless, we used the GaN microLED coupled with the a-Si:H fluorescence sensor to successfully detect fluorescence from a streptavidin R-phycoerythrin conjugate that bound to biotinylated antibody-coated microbeads trapped by the barrier in the microfluidic channel.

  19. Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons

    NASA Astrophysics Data System (ADS)

    Radu, R.; Pintilie, I.; Makarenko, L. F.; Fretwurst, E.; Lindstroem, G.

    2018-04-01

    This work focuses on the kinetic mechanisms responsible for the annealing behavior of radiation cluster-related defects with impact on the electrical performance of silicon sensors. Such sensors were manufactured on high resistivity n-type standard float-zone (STFZ) and oxygen enriched float-zone (DOFZ) material and had been irradiated with mono-energetic electrons of 3.5 MeV energy and fluences of 3 × 1014 cm-2 and 6 × 1014 cm-2. After irradiation, the samples were subjected either to isochronal or isothermal heat treatments in the temperature range from 80 °C to 300 °C. The specific investigated defects are a group of three deep acceptors [H(116 K), H(140 K), and H(152 K)] with energy levels in the lower half of the band gap and a shallow donor E(30 K) with a level at 0.1 eV below the conduction band. The stability and kinetics of these defects at high temperatures are discussed on the basis of the extracted activation energies and frequency factors. The annealing of the H defects takes place similarly in both types of materials, suggesting a migration rather than a dissociation mechanism. On the contrary, the E(30 K) defect shows a very different annealing behavior, being stable in STFZ even at 300 °C, but annealing-out quickly in DOFZ material at temperatures higher than 200 °C , with a high frequency factor of the order of 1013 s-1. Such a behavior rules out a dissociation process, and the different annealing behavior is suggested to be related to a bistable behavior of the defect.

  20. Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

    PubMed

    Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

    2014-01-08

    Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

  1. Micromachined electron tunneling infrared sensors

    NASA Technical Reports Server (NTRS)

    Kenny, T. W.; Kaiser, W. J.; Podosek, J. A.; Rockstad, H. K.; Reynolds, J. K.

    1993-01-01

    The development of an improved Golay cell is reported. This new sensor is constructed entirely from micromachined silicon components. A silicon oxynitride (SiO(x)N(y)) membrane is deflected by the thermal expansion of a small volume of trapped gas. To detect the motion of the membrane, an electron tunneling transducer is used. This sensor detects electrons which tunnel through the classically forbidden barrier between a tip and a surface; the electron current is exponentially dependent on the separation between the tip and the surface. The sensitivity of tunneling transducers constructed was typically better than 10(exp -3) A/square root of Hz. Through use of the electron tunneling transducer, the scaling laws which have prevented the miniaturization of the Golay cell are avoided. This detector potentially offers low cost fabrication, compatibility with silicon readout electronics, and operation without cooling. Most importantly, this detector may offer better sensitivity than any other uncooled infrared sensor, with the exception of the original Golay cell.

  2. The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

    NASA Astrophysics Data System (ADS)

    Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

    2017-02-01

    The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

  3. Sensors for the CMS Forward Pixel Phase 1 Upgrade

    NASA Astrophysics Data System (ADS)

    Dilsiz, Kamuran; CMS Collaboration

    2016-03-01

    The next incarnation of the CMS forward pixel detector, to be installed during the year end extended technical stop 2016-17, will need to survive an integrated luminosity of 300 fb-1 with the inner radius of the active region of the disks decreasing from 6 to 4.5 cm. Based on the Run 1 experience and irradiation studies, the Phase 1 FPIX sensors will again be n-on-n DOFZ silicon, with parameters similar to those in the present run. We will review the design choices including a study during the prototyping phase to explore different p-stop layouts. Results from the quality assurance probing of the full production of sensor wafers will be described. The IV measurements are particularly impressive with current densities in range of 3-4 nA/cm2 at the full depletion voltage.

  4. ScAlN etch mask for highly selective silicon etching

    DOE PAGES

    Henry, Michael David; Young, Travis R.; Griffin, Ben

    2017-09-08

    Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

  5. Dual-gate operation and carrier transport in SiGe p-n junction nanowires

    NASA Astrophysics Data System (ADS)

    Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

    2017-11-01

    We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

  6. Process for forming retrograde profiles in silicon

    DOEpatents

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  7. Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

    NASA Astrophysics Data System (ADS)

    Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

    2009-04-01

    This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

  8. Efficient Flame Detection and Early Warning Sensors on Combustible Materials Using Hierarchical Graphene Oxide/Silicone Coatings.

    PubMed

    Wu, Qian; Gong, Li-Xiu; Li, Yang; Cao, Cheng-Fei; Tang, Long-Cheng; Wu, Lianbin; Zhao, Li; Zhang, Guo-Dong; Li, Shi-Neng; Gao, Jiefeng; Li, Yongjin; Mai, Yiu-Wing

    2018-01-23

    Design and development of smart sensors for rapid flame detection in postcombustion and early fire warning in precombustion situations are critically needed to improve the fire safety of combustible materials in many applications. Herein, we describe the fabrication of hierarchical coatings created by assembling a multilayered graphene oxide (GO)/silicone structure onto different combustible substrate materials. The resulting coatings exhibit distinct temperature-responsive electrical resistance change as efficient early warning sensors for detecting abnormal high environmental temperature, thus enabling fire prevention below the ignition temperature of combustible materials. After encountering a flame attack, we demonstrate extremely rapid flame detection response in 2-3 s and excellent flame self-extinguishing retardancy for the multilayered GO/silicone structure that can be synergistically transformed to a multiscale graphene/nanosilica protection layer. The hierarchical coatings developed are promising for fire prevention and protection applications in various critical fire risk and related perilous circumstances.

  9. Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

    NASA Astrophysics Data System (ADS)

    Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2015-10-01

    We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

  10. pH sensor based on boron nitride nanotubes.

    PubMed

    Huang, Q; Bando, Y; Zhao, L; Zhi, C Y; Golberg, D

    2009-10-14

    A submicrometer-sized pH sensor based on biotin-fluorescein-functionalized multiwalled BN nanotubes with anchored Ag nanoparticles is designed. Intrinsic pH-dependent photoluminescence and Raman signals in attached fluorescein molecules enhanced by Ag nanoparticles allow this novel nanohybrid to perform as a practical pH sensor. It is able to work in a submicrometer-sized space. For example, the sensor may determine the environmental pH of sub-units in living cells where a traditional optical fiber sensor fails because of spatial limitations.

  11. pH sensor based on boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Huang, Q.; Bando, Y.; Zhao, L.; Zhi, C. Y.; Golberg, D.

    2009-10-01

    A submicrometer-sized pH sensor based on biotin-fluorescein-functionalized multiwalled BN nanotubes with anchored Ag nanoparticles is designed. Intrinsic pH-dependent photoluminescence and Raman signals in attached fluorescein molecules enhanced by Ag nanoparticles allow this novel nanohybrid to perform as a practical pH sensor. It is able to work in a submicrometer-sized space. For example, the sensor may determine the environmental pH of sub-units in living cells where a traditional optical fiber sensor fails because of spatial limitations.

  12. Fabrication of thermal microphotonic sensors and sensor arrays

    DOEpatents

    Shaw, Michael J.; Watts, Michael R.; Nielson, Gregory N.

    2010-10-26

    A thermal microphotonic sensor is fabricated on a silicon substrate by etching an opening and a trench into the substrate, and then filling in the opening and trench with silicon oxide which can be deposited or formed by thermally oxidizing a portion of the silicon substrate surrounding the opening and trench. The silicon oxide forms a support post for an optical resonator which is subsequently formed from a layer of silicon nitride, and also forms a base for an optical waveguide formed from the silicon nitride layer. Part of the silicon substrate can be selectively etched away to elevate the waveguide and resonator. The thermal microphotonic sensor, which is useful to detect infrared radiation via a change in the evanescent coupling of light between the waveguide and resonator, can be formed as a single device or as an array.

  13. Smart integration of silicon nanowire arrays in all-silicon thermoelectric micro-nanogenerators

    NASA Astrophysics Data System (ADS)

    Fonseca, Luis; Santos, Jose-Domingo; Roncaglia, Alberto; Narducci, Dario; Calaza, Carlos; Salleras, Marc; Donmez, Inci; Tarancon, Albert; Morata, Alex; Gadea, Gerard; Belsito, Luca; Zulian, Laura

    2016-08-01

    Micro and nanotechnologies are called to play a key role in the fabrication of small and low cost sensors with excellent performance enabling new continuous monitoring scenarios and distributed intelligence paradigms (Internet of Things, Trillion Sensors). Harvesting devices providing energy autonomy to those large numbers of microsensors will be essential. In those scenarios where waste heat sources are present, thermoelectricity will be the obvious choice. However, miniaturization of state of the art thermoelectric modules is not easy with the current technologies used for their fabrication. Micro and nanotechnologies offer an interesting alternative considering that silicon in nanowire form is a material with a promising thermoelectric figure of merit. This paper presents two approaches for the integration of large numbers of silicon nanowires in a cost-effective and practical way using only micromachining and thin-film processes compatible with silicon technologies. Both approaches lead to automated physical and electrical integration of medium-high density stacked arrays of crystalline or polycrystalline silicon nanowires with arbitrary length (tens to hundreds microns) and diameters below 100 nm.

  14. A novel sensor for bite force determinations.

    PubMed

    Fernandes, Cláudio P; Glantz, Per Olof J; Svensson, Stig A; Bergmark, Anders

    2003-03-01

    The clinical usefulness, accuracy and precision of a novel bite force sensor based on force sensing resistors were tested in six subjects wearing maxillary removable partial dentures retained by conical crowns. The surfaces of the sensor were manufactured in a silicone material that had mechanical properties similar to those of tough foodstuffs. In two separate series of standardized bite force tests, submaximum force levels were recorded with the sensor and with a strain gaged bite fork. Subjects were assisted in the loading tests with visual feedback instrumentation. Reliability estimates for the bite force sensor were calculated in order to show their reproducibility. Strain gages attached to the prostheses were used to determine the pattern of force distribution during loading tests. The bite force results obtained with the new bite force sensor and with the bite fork were analyzed with ANOVA and Scheffés tests. The strain patterns registered with strain gages were analyzed with F-test. The bite force sensor and the bite fork transducer showed no statistically significant differences in respect of intra-individual bite force levels (range 50-300N). The bite forces registered with the new sensor were dependent on the loading position (p<0.05), sex (p<0.05) and test subject (p<0.05). The reliability of the new sensor for submaximum bite forces was calculated to be 93%. Strain gage results showed that the new sensor generated strain patterns of less variance (p<0.05) than the bite fork and therefore allowed for higher precision during biting tests. The presented instrument has such clinical merits, as to favor its use in experimental clinical studies on the biomechanics of prosthetic appliances.

  15. GaN-on-Silicon - Present capabilities and future directions

    NASA Astrophysics Data System (ADS)

    Boles, Timothy

    2018-02-01

    Gallium Nitride, in the form of epitaxial HEMT transistors on various substrate materials, is the newest and most promising semiconductor technology for high performance devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-Silicon based devices and MMIC's which enable both state-of-the-art high frequency functionality and the ability to scale production into large wafer diameter CMOS foundries. The design and development of GaN-on-Silicon structures and devices will be presented beginning with the basic material parameters, growth of the required epitaxial construction, and leading to the fundamental operational theory of high frequency, high power HEMTs. In this discussion comparisons will be made with alternative substrate materials with emphasis on contrasting the inherent advantages of a silicon based system. Theory of operation of microwave and mmW high power HEMT devices will be presented with special emphasis on fundamental limitations of device performance including inherent frequency limiting transit time analysis, required impedance transformations, internal and external parasitic reactance, thermal impedance optimization, and challenges improved by full integration into monolithic MMICs. Lastly, future directions for implementing GaN-on-Silicon into mainstream CMOS silicon semiconductor technologies will be discussed.

  16. A dual pH and temperature responsive polymeric fluorescent sensor and its imaging application in living cells.

    PubMed

    Yin, Liyan; He, Chunsheng; Huang, Chusen; Zhu, Weiping; Wang, Xin; Xu, Yufang; Qian, Xuhong

    2012-05-11

    A polymeric fluorescent sensor PNME, consisting of A4 and N-isopropylacrylamide (NIPAM) units, was synthesized. PNME exhibited dual responses to pH and temperature, and could be used as an intracellular pH sensor for lysosomes imaging. Moreover, it also could sense different temperature change in living cells at 25 and 37 °C, respectively. This journal is © The Royal Society of Chemistry 2012

  17. Metal/Metal Oxide Differential Electrode pH Sensors

    NASA Technical Reports Server (NTRS)

    West, William; Buehler, Martin; Keymeulen, Didier

    2007-01-01

    Solid-state electrochemical sensors for measuring the degrees of acidity or alkalinity (in terms of pH values) of liquid solutions are being developed. These sensors are intended to supplant older electrochemical pH sensors that include glass electrode structures and reference solutions. The older sensors are fragile and subject to drift. The present developmental solid-state sensors are more rugged and are expected to be usable in harsh environments. The present sensors are based on a differential-electrode measurement principle. Each sensor includes two electrodes, made of different materials, in equilibrium with the solution of interest.

  18. A Physically Transient Form of Silicon Electronics, With Integrated Sensors, Actuators and Power Supply

    PubMed Central

    Hwang, Suk-Won; Tao, Hu; Kim, Dae-Hyeong; Cheng, Huanyu; Song, Jun-Kyul; Rill, Elliott; Brenckle, Mark A.; Panilaitis, Bruce; Won, Sang Min; Kim, Yun-Soung; Yu, Ki Jun; Ameen, Abid; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L.; Zakin, Mitchell R.; Slepian, Marvin J.; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.

    2013-01-01

    A remarkable feature of modern silicon electronics is its ability to remain functionally and physically invariant, almost indefinitely for many practical purposes. Here, we introduce a silicon-based technology that offers the opposite behavior: it gradually vanishes over time, in a well-controlled, programmed manner. Devices that are ‘transient’ in this sense create application possibilities that cannot be addressed with conventional electronics, such as active implants that exist for medically useful timeframes, but then completely dissolve and disappear via resorption by the body. We report a comprehensive set of materials, manufacturing schemes, device components and theoretical design tools for a complementary metal oxide semiconductor (CMOS) electronics of this type, together with four different classes of sensors and actuators in addressable arrays, two options for power supply and a wireless control strategy. A transient silicon device capable of delivering thermal therapy in an implantable mode and its demonstration in animal models illustrate a system-level example of this technology. PMID:23019646

  19. Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor

    PubMed Central

    Zhao, Xiaofeng; Wen, Dianzhong; Li, Gang

    2012-01-01

    A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process and MEMS technology where channel resistances of the four nc-Si/c-Si heterojunction MOSFETs form a Wheatstone bridge. When the additional pressure is P, the nc-Si/c-Si heterojunction MOSFETs pressure sensor can measure this additional pressure P. The experimental results show that when the supply voltage is 3 V, length-width (L:W) ratio is 2:1, and the silicon membrane thickness is 75 μm, the full scale output voltage of the pressure sensor is 15.50 mV at room temperature, and pressure sensitivity is 0.097 mV/kPa. When the supply voltage and L:W ratio are the same as the above, and the silicon membrane thickness is 45 μm, the full scale output voltage is 43.05 mV, and pressure sensitivity is 2.153 mV/kPa. Therefore, the sensor has higher sensitivity and good temperature characteristics compared to the traditional piezoresistive pressure sensor. PMID:22778646

  20. Capacitive wearable tactile sensor based on smart textile substrate with carbon black /silicone rubber composite dielectric

    NASA Astrophysics Data System (ADS)

    Guo, Xiaohui; Huang, Ying; Cai, Xia; Liu, Caixia; Liu, Ping

    2016-04-01

    To achieve the wearable comfort of electronic skin (e-skin), a capacitive sensor printed on a flexible textile substrate with a carbon black (CB)/silicone rubber (SR) composite dielectric was demonstrated in this paper. Organo-silicone conductive silver adhesive serves as a flexible electrodes/shielding layer. The structure design, sensing mechanism and the influence of the conductive filler content and temperature variations on the sensor performance were investigated. The proposed device can effectively enhance the flexibility and comfort of wearing the device asthe sensing element has achieved a sensitivity of 0.02536%/KPa, a hysteresis error of 5.6%, and a dynamic response time of ~89 ms at the range of 0-700 KPa. The drift induced by temperature variations has been calibrated by presenting the temperature compensation model. The research on the time-space distribution of plantar pressure information and the experiment of the manipulator soft-grasping were implemented with the introduced device, and the experimental results indicate that the capacitive flexible textile tactile sensor has good stability and tactile perception capacity. This study provides a good candidate for wearable artificial skin.

  1. New Flexible Silicone-Based EEG Dry Sensor Material Compositions Exhibiting Improvements in Lifespan, Conductivity, and Reliability

    PubMed Central

    Yu, Yi-Hsin; Chen, Shih-Hsun; Chang, Che-Lun; Lin, Chin-Teng; Hairston, W. David; Mrozek, Randy A.

    2016-01-01

    This study investigates alternative material compositions for flexible silicone-based dry electroencephalography (EEG) electrodes to improve the performance lifespan while maintaining high-fidelity transmission of EEG signals. Electrode materials were fabricated with varying concentrations of silver-coated silica and silver flakes to evaluate their electrical, mechanical, and EEG transmission performance. Scanning electron microscope (SEM) analysis of the initial electrode development identified some weak points in the sensors’ construction, including particle pull-out and ablation of the silver coating on the silica filler. The newly-developed sensor materials achieved significant improvement in EEG measurements while maintaining the advantages of previous silicone-based electrodes, including flexibility and non-toxicity. The experimental results indicated that the proposed electrodes maintained suitable performance even after exposure to temperature fluctuations, 85% relative humidity, and enhanced corrosion conditions demonstrating improvements in the environmental stability. Fabricated flat (forehead) and acicular (hairy sites) electrodes composed of the optimum identified formulation exhibited low impedance and reliable EEG measurement; some initial human experiments demonstrate the feasibility of using these silicone-based electrodes for typical lab data collection applications. PMID:27809260

  2. The electrical losses induced by silver paste in n-type silicon solar cells

    NASA Astrophysics Data System (ADS)

    Aoyama, Takayuki; Aoki, Mari; Sumita, Isao; Yoshino, Yasushi; Ohshita, Yoshio; Ogura, Atsushi

    2017-10-01

    Aluminum-added silver paste (Ag/Al paste) has been used for p+ emitter of n-type solar cells. The electrical losses due to shunting and recombination caused by the paste in the cells have been reported to originate from huge metallic spikes due to the aluminum. However, whether the aluminum actually induces the losses has not been clarified yet. In this study, the “floating contact method” is applied to aluminum-free silver (Al-free Ag) paste to investigate the effects of aluminum extraction from the Ag/Al paste and to understand how the aluminum principally induces the losses for the p+ emitter. Furthermore, the interfacial morphology between the Al-free Ag paste and p-type silicon is investigated. The Ag paste itself creates tiny crystallites for the p+ emitter, resulting in shunting and recombination. The result indicates that the aluminum addition to Ag paste is not the main reason for the electrical losses in the n-type solar cells.

  3. A quantum dot-spore nanocomposite pH sensor.

    PubMed

    Zhang, Xingya; Li, Zheng; Zhou, Tao; Zhou, Qian; Zeng, Zhiming; Xu, Xiangdong; Hu, Yonggang

    2016-04-01

    A new quantum dot (QD)-based pH sensor design is investigated. The sensor is synthesized based on the self-assembly of green QDs onto treated spores to form QD@spore nanocomposites. The nanocomposites are characterized using laser scanning confocal microscopy, transmission electron microscope, and fluorescence spectroscopy, among others. Fluorescence measurements showed that these nanocomposites are sensitive to pH in a broad pH range of 5.0-10.0. The developed pH sensors have been satisfactorily applied for pH estimation of real samples and are comparable with those of the commercial assay method, indicating the potential practical application of the pH sensors. Copyright © 2015 Elsevier B.V. All rights reserved.

  4. Method utilizing laser-processing for the growth of epitaxial p-n junctions

    DOEpatents

    Young, R.T.; Narayan, J.; Wood, R.F.

    1979-11-23

    This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

  5. A remote query magnetoelastic pH sensor.

    PubMed

    Cai, Q Y; Grimes, C A

    2000-11-15

    A remote query magnetoelastic pH sensor comprised of a magnetoelastic thick-film coated with a mass-changing pH-responsive polymer is described. In response to a magnetic query field the magnetoelastic sensor mechanically vibrates at a characteristic frequency that is inversely dependent upon the mass of the attached polymer layer. As the magnetoelastic sensor is magnetostrictive the mechanical vibrations of the sensor launch magnetic flux that can be detected remotely from the sensor using a pickup coil. The pH responsive copolymer is synthesized from 20 mol% of acrylic acid and 80 mol% of iso-octyl acrylate and then deposited onto a magnetoelastic film by dip-coating. For a 1 micrometer polymer coating upon a 30 micrometer thick Metglas [The Metglas alloys are a registered trademark of Honeywell Corporation. For product information see: http://www.electronicmaterials.com:80/businesses/sem/amorph/page5_1_2.htm.] alloy 2826MB magnetoelastic film between pH 5 and 9 the change in resonant frequency is linear, approximately 285 Hz/pH or 0.6%/pH. The addition of 10 mmol/l of KCl to the test solution decreases the sensitivity of the polymer approximately 4%. c2000 Elsevier Science B.V. All rights reserved.

  6. Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Xinyu, E-mail: xinyu.zhang@anu.edu.au; Wan, Yimao; Bullock, James

    2016-08-01

    This work explores the application of transparent nitrogen doped copper oxide (CuO{sub x}:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuO{sub x}:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuO{sub x}:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contactmore » resistivity of ∼10 mΩ cm{sup 2} has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.« less

  7. Analytical Study of 90Sr Betavoltaic Nuclear Battery Performance Based on p-n Junction Silicon

    NASA Astrophysics Data System (ADS)

    Rahastama, Swastya; Waris, Abdul

    2016-08-01

    Previously, an analytical calculation of 63Ni p-n junction betavoltaic battery has been published. As the basic approach, we reproduced the analytical simulation of 63Ni betavoltaic battery and then compared it to previous results using the same design of the battery. Furthermore, we calculated its maximum power output and radiation- electricity conversion efficiency using semiconductor analysis method.Then, the same method were applied to calculate and analyse the performance of 90Sr betavoltaic battery. The aim of this project is to compare the analytical perfomance results of 90Sr betavoltaic battery to 63Ni betavoltaic battery and the source activity influences to performance. Since it has a higher power density, 90Sr betavoltaic battery yields more power than 63Ni betavoltaic battery but less radiation-electricity conversion efficiency. However, beta particles emitted from 90Sr source could travel further inside the silicon corresponding to stopping range of beta particles, thus the 90Sr betavoltaic battery could be designed thicker than 63Ni betavoltaic battery to achieve higher conversion efficiency.

  8. Evaluating nanoparticle sensor design for intracellular pH measurements.

    PubMed

    Benjaminsen, Rikke V; Sun, Honghao; Henriksen, Jonas R; Christensen, Nynne M; Almdal, Kristoffer; Andresen, Thomas L

    2011-07-26

    Particle-based nanosensors have over the past decade been designed for optical fluorescent-based ratiometric measurements of pH in living cells. However, quantitative and time-resolved intracellular measurements of pH in endosomes and lysosomes using particle nanosensors are challenging, and there is a need to improve measurement methodology. In the present paper, we have successfully carried out time-resolved pH measurements in endosomes and lyosomes in living cells using nanoparticle sensors and show the importance of sensor choice for successful quantification. We have studied two nanoparticle-based sensor systems that are internalized by endocytosis and elucidated important factors in nanosensor design that should be considered in future development of new sensors. From our experiments it is clear that it is highly important to use sensors that have a broad measurement range, as erroneous quantification of pH is an unfortunate result when measuring pH too close to the limit of the sensitive range of the sensors. Triple-labeled nanosensors with a pH measurement range of 3.2-7.0, which was synthesized by adding two pH-sensitive fluorophores with different pK(a) to each sensor, seem to be a solution to some of the earlier problems found when measuring pH in the endosome-lysosome pathway.

  9. Reliable Breakdown Obtained in Silicon Carbide Rectifiers

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1997-01-01

    The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

  10. A fiber-optic water flow sensor based on laser-heated silicon Fabry-Pérot cavity

    NASA Astrophysics Data System (ADS)

    Liu, Guigen; Sheng, Qiwen; Resende Lisboa Piassetta, Geraldo; Hou, Weilin; Han, Ming

    2016-05-01

    A hot-wire fiber-optic water flow sensor based on laser-heated silicon Fabry-Pérot interferometer (FPI) has been proposed and demonstrated in this paper. The operation of the sensor is based on the convective heat loss to water from a heated silicon FPI attached to the cleaved enface of a piece of single-mode fiber. The flow-induced change in the temperature is demodulated by the spectral shifts of the reflection fringes. An analytical model based on the FPI theory and heat transfer analysis has been developed for performance analysis. Numerical simulations based on finite element analysis have been conducted. The analytical and numerical results agree with each other in predicting the behavior of the sensor. Experiments have also been carried to demonstrate the sensing principle and verify the theoretical analysis. Investigations suggest that the sensitivity at low flow rates are much larger than that at high flow rates and the sensitivity can be easily improved by increasing the heating laser power. Experimental results show that an average sensitivity of 52.4 nm/(m/s) for the flow speed range of 1.5 mm/s to 12 mm/s was obtained with a heating power of ~12 mW, suggesting a resolution of ~1 μm/s assuming a wavelength resolution of 0.05 pm.

  11. Predictable quantum efficient detector based on n-type silicon photodiodes

    NASA Astrophysics Data System (ADS)

    Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

    2017-12-01

    The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of

  12. Simulation and characterization of silicon nanopillar-based nanoparticle sensors

    NASA Astrophysics Data System (ADS)

    Wasisto, Hutomo Suryo; Merzsch, Stephan; Huang, Kai; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2013-05-01

    Nanopillar-based structures hold promise as highly sensitive resonant mass sensors for a new generation of aerosol nanoparticle (NP) detecting devices because of their very small masses. In this work, the possible use of a silicon nanopillar (SiNPL) array as a nanoparticle sensor is investigated. The sensor structures are created and simulated using a finite element modeling (FEM) tool of COMSOL Multiphysics 4.3 to study the resonant characteristics and the sensitivity of the SiNPL for femtogram NP mass detection. Instead of using 2D plate models or simple single 3D cylindrical pillar models, FEM is performed with SiNPLs in 3D structures based on the real geometry of experimental SiNPL arrays employing a piezoelectric stack for resonant excitation. In order to achieve an optimal structure and investigate the etching effect on the fabricated resonators, SiNPLs with different designs of meshes, sidewall profiles, lengths, and diameters are simulated and analyzed. To validate the FEM results, fabricated SiNPLs with a high aspect ratio of ~60 are employed and characterized in resonant frequency measurements. SiNPLs are mounted onto a piezoactuator inside a scanning electron microscope (SEM) chamber which can excite SiNPLs into lateral vibration. The measured resonant frequencies of the SiNPLs with diameters about 650 nm and heights about 40 μm range from 434.63 kHz to 458.21 kHz, which agree well with those simulated by FEM. Furthermore, the deflection of a SiNPL can be enhanced by increasing the applied piezoactuator voltage. By depositing different NPs (i.e., carbon, TiO2, SiO2, Ag, and Au NPs) on the SiNPLs, the decrease of the resonant frequency is clearly shown confirming their potential to be used as airborne NP mass sensor with femtogram resolution level.

  13. Nitrogen-rich functional groups carbon nanoparticles based fluorescent pH sensor with broad-range responding for environmental and live cells applications.

    PubMed

    Shi, Bingfang; Su, Yubin; Zhang, Liangliang; Liu, Rongjun; Huang, Mengjiao; Zhao, Shulin

    2016-08-15

    A nitrogen-rich functional groups carbon nanoparticles (N-CNs) based fluorescent pH sensor with a broad-range responding was prepared by one-pot hydrothermal treatment of melamine and triethanolamine. The as-prepared N-CNs exhibited excellent photoluminesence properties with an absolute quantum yield (QY) of 11.0%. Furthermore, the N-CNs possessed a broad-range pH response. The linear pH response range was 3.0 to 12.0, which is much wider than that of previously reported fluorescent pH sensors. The possible mechanism for the pH-sensitive response of the N-CNs was ascribed to photoinduced electron transfer (PET). Cell toxicity experiment showed that the as-prepared N-CNs exhibited low cytotoxicity and excellent biocompatibility with the cell viabilities of more than 87%. The proposed N-CNs-based pH sensor was used for pH monitoring of environmental water samples, and pH fluorescence imaging of live T24 cells. The N-CNs is promising as a convenient and general fluorescent pH sensor for environmental monitoring and bioimaging applications. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. A genetically-encoded chloride and pH sensor for dissociating ion dynamics in the nervous system

    PubMed Central

    Raimondo, Joseph V.; Joyce, Bradley; Kay, Louise; Schlagheck, Theresa; Newey, Sarah E.; Srinivas, Shankar; Akerman, Colin J.

    2013-01-01

    Within the nervous system, intracellular Cl− and pH regulate fundamental processes including cell proliferation, metabolism, synaptic transmission, and network excitability. Cl− and pH are often co-regulated, and network activity results in the movement of both Cl− and H+. Tools to accurately measure these ions are crucial for understanding their role under physiological and pathological conditions. Although genetically-encoded Cl− and pH sensors have been described previously, these either lack ion specificity or are unsuitable for neuronal use. Here we present ClopHensorN—a new genetically-encoded ratiometric Cl− and pH sensor that is optimized for the nervous system. We demonstrate the ability of ClopHensorN to dissociate and simultaneously quantify Cl− and H+ concentrations under a variety of conditions. In addition, we establish the sensor's utility by characterizing activity-dependent ion dynamics in hippocampal neurons. PMID:24312004

  15. Silicon photonic dual-gas sensor for H2 and CO2 detection.

    PubMed

    Mi, Guangcan; Horvath, Cameron; Van, Vien

    2017-07-10

    We report a silicon photonic dual-gas sensor based on a wavelength-multiplexed microring resonator array for simultaneous detection of H 2 and CO 2 gases. The sensor uses Pd as the sensing layer for H 2 gas and a novel functional material based on the Polyhexamethylene Biguanide (PHMB) polymer for CO 2 gas sensing. Gas sensing experiments showed that the PHMB-functionalized microring exhibited high sensitivity to CO 2 gas and excellent selectivity against H 2 . However, the Pd-functionalized microring was found to exhibit sensitivity to both H 2 and CO 2 gases, rendering it ineffective for detecting H 2 in a gas mixture containing CO 2 . We show that the dual-gas sensing scheme can allow for accurate measurement of H 2 concentration in the presence of CO 2 by accounting for the cross-sensitivity of Pd to the latter.

  16. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

    PubMed

    Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

    2016-03-07

    We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

  17. Fiber-Optic Temperature Sensor Using a Thin-Film Fabry-Perot Interferometer

    NASA Technical Reports Server (NTRS)

    Beheim, Glenn

    1997-01-01

    A fiber-optic temperature sensor was developed that is rugged, compact, stable, and can be inexpensively fabricated. This thin-film interferometric temperature sensor was shown to be capable of providing a +/- 2 C accuracy over the range of -55 to 275 C, throughout a 5000 hr operating life. A temperature-sensitive thin-film Fabry-Perot interferometer can be deposited directly onto the end of a multimode optical fiber. This batch-fabricatable sensor can be manufactured at a much lower cost than can a presently available sensor, which requires the mechanical attachment of a Fabry-Perot interferometer to a fiber. The principal disadvantage of the thin-film sensor is its inherent instability, due to the low processing temperatures that must be used to prevent degradation of the optical fiber's buffer coating. The design of the stable thin-film temperature sensor considered the potential sources of both short and long term drifts. The temperature- sensitive Fabry-Perot interferometer was a silicon film with a thickness of approx. 2 microns. A laser-annealing process was developed which crystallized the silicon film without damaging the optical fiber. The silicon film was encapsulated with a thin layer of Si3N4 over coated with aluminum. Crystallization of the silicon and its encapsulation with a highly stable, impermeable thin-film structure were essential steps in producing a sensor with the required long-term stability.

  18. Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.

    PubMed

    Manna, Sujit; Ashok, Vishal D; De, S K

    2010-12-01

    The heterojunction of a Pd-doped p-GaN nanowire and n-Si (100) is fabricated vertically by the vapor-liquid-solid method. The average diameter of the nanowire is 40 nm. The vertical junction reveals a significantly high rectification ratio of 10(3) at 5 V, a moderate ideality factor of ∼2, and a high breakdown voltage of ∼40 V. The charge transport across the p-n junction is dominated by the electron-hole recombination process. The voltage dependence of capacitance indicates a graded-type junction. The resistance of the junction decreases with an increase in the bias voltage confirmed by impedance measurements.

  19. Ductile cutting of silicon microstructures with surface inclination measurement and compensation by using a force sensor integrated single point diamond tool

    NASA Astrophysics Data System (ADS)

    Chen, Yuan-Liu; Cai, Yindi; Shimizu, Yuki; Ito, So; Gao, Wei; Ju, Bing-Feng

    2016-02-01

    This paper presents a measurement and compensation method of surface inclination for ductile cutting of silicon microstructures by using a diamond tool with a force sensor based on a four-axis ultra-precision lathe. The X- and Y-directional inclinations of a single crystal silicon workpiece with respect to the X- and Y-motion axes of the lathe slides were measured respectively by employing the diamond tool as a touch-trigger probe, in which the tool-workpiece contact is sensitively detected by monitoring the force sensor output. Based on the measurement results, fabrication of silicon microstructures can be thus carried out directly along the tilted silicon workpiece by compensating the cutting motion axis to be parallel to the silicon surface without time-consuming pre-adjustment of the surface inclination or turning of a flat surface. A diamond tool with a negative rake angle was used in the experiment for superior ductile cutting performance. The measurement precision by using the diamond tool as a touch-trigger probe was investigated. Experiments of surface inclination measurement and ultra-precision ductile cutting of a micro-pillar array and a micro-pyramid array with inclination compensation were carried out respectively to demonstrate the feasibility of the proposed method.

  20. A silicone rubber based composites using n-octadecane/poly (styrene-methyl methacrylate) microcapsules as energy storage particle

    NASA Astrophysics Data System (ADS)

    Wu, W. L.; Chen, Z.

    A phase-change energy-storage material, silicone rubber (SR) coated n-octadecane/poly (styrene-methyl methacrylate) (SR/OD/P(St-MMA)) microcapsule composites, was prepared by mixing SR and OD/P(St-MMA) microcapsules. The microcapsule content and silicone rubber coated method were investigated. The morphology and thermal properties of the composites were characterized by scanning electron microscopy (SEM), thermogravimetric analysis (TG), differential scanning calorimetry (DSC) and heat storage properties. The results showed that the thermal and mechanical properties of SR/OD/P(St-MMA) composites were excellent when the microcapsules were coated with room temperature vulcanized silicone rubber (RTVSR), of which content was 2 phr (per hundred rubber). The enthalpy value of the composites was 67.6 J g-1 and the composites were found to have good energy storage function.

  1. Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

    NASA Astrophysics Data System (ADS)

    Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.

    2017-09-01

    Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20-25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30-60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p+ implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO2 interface charge densities (Qf) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p+ implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Qf, that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.

  2. Site-Controlled Growth of Monolithic InGaAs/InP Quantum Well Nanopillar Lasers on Silicon.

    PubMed

    Schuster, Fabian; Kapraun, Jonas; Malheiros-Silveira, Gilliard N; Deshpande, Saniya; Chang-Hasnain, Connie J

    2017-04-12

    In this Letter, we report the site-controlled growth of InP nanolasers on a silicon substrate with patterned SiO 2 nanomasks by low-temperature metal-organic chemical vapor deposition, compatible with silicon complementary metal-oxide-semiconductor (CMOS) post-processing. A two-step growth procedure is presented to achieve smooth wurtzite faceting of vertical nanopillars. By incorporating InGaAs multiquantum wells, the nanopillar emission can be tuned over a wide spectral range. Enhanced quality factors of the intrinsic InP nanopillar cavities promote lasing at 0.87 and 1.21 μm, located within two important optical telecommunication bands. This is the first demonstration of a site-controlled III-V nanolaser monolithically integrated on silicon with a silicon-transparent emission wavelength, paving the way for energy-efficient on-chip optical links at typical telecommunication wavelengths.

  3. A flexible touch-pressure sensor array with wireless transmission system for robotic skin

    NASA Astrophysics Data System (ADS)

    Huang, Ying; Fang, Ding; Wu, Can; Wang, Weihua; Guo, Xiaohui; Liu, Ping

    2016-06-01

    Human skin contains multiple receptors and is able to sense various stimuli such as temperature, touch, pressure, and deformation, with high sensitivity and resolution. The development of skin-like sensors capable of sensing these stimuli is of great importance for various applications such as robots, touch detection, temperature monitoring, and strain gauges. Great efforts have been made to develop high performance touch sensor and pressure sensor. Compared with general sensor, the touch-pressure sensor which is reported in this paper not only can measure large pressure but also has a high resolution in the small range so that it can feel slight touch. The sensor has a vertical structure. The upper layer is made of silicone rubber as the capacitive layer and the lower layer employs multiwall carbon nanotubes and carbon black filled silicone rubber as the resistive layer. The electrodes are made by conductive silver adhesives. In addition, the electrodes are connected to the pads on the top surface of the flexible printed circuit board by enamelled wires which made it easier to fabricate sensor array. The resolution of the touch-pressure sensor in the range of 0-10 N and 10-100 N are 0.1 N and 1 N, respectively. The experimental data of the sensor are sent by ZigBee wireless technology which reduces the complexity of the wiring and provides a convenient way to apply and maintain the sensor array.

  4. A flexible touch-pressure sensor array with wireless transmission system for robotic skin.

    PubMed

    Huang, Ying; Fang, Ding; Wu, Can; Wang, Weihua; Guo, Xiaohui; Liu, Ping

    2016-06-01

    Human skin contains multiple receptors and is able to sense various stimuli such as temperature, touch, pressure, and deformation, with high sensitivity and resolution. The development of skin-like sensors capable of sensing these stimuli is of great importance for various applications such as robots, touch detection, temperature monitoring, and strain gauges. Great efforts have been made to develop high performance touch sensor and pressure sensor. Compared with general sensor, the touch-pressure sensor which is reported in this paper not only can measure large pressure but also has a high resolution in the small range so that it can feel slight touch. The sensor has a vertical structure. The upper layer is made of silicone rubber as the capacitive layer and the lower layer employs multiwall carbon nanotubes and carbon black filled silicone rubber as the resistive layer. The electrodes are made by conductive silver adhesives. In addition, the electrodes are connected to the pads on the top surface of the flexible printed circuit board by enamelled wires which made it easier to fabricate sensor array. The resolution of the touch-pressure sensor in the range of 0-10 N and 10-100 N are 0.1 N and 1 N, respectively. The experimental data of the sensor are sent by ZigBee wireless technology which reduces the complexity of the wiring and provides a convenient way to apply and maintain the sensor array.

  5. Diurnal and seasonal variations of pH for a year in the western subarctic North Pacific observed by using a hybrid pH sensor

    NASA Astrophysics Data System (ADS)

    Nakano, Yoshiyuki; Fujiki, Tetsuichi; Kimoto, Katsunori; Miwa, Tetsuya

    2017-04-01

    Ocean acidification has many far reaching impacts on plankton community in the ocean. There is great need of quality instrumentation to assess and monitor the changing seawater pH. To meet the need, we have developed the in situ high accurate pH sensor (Hybrid pH sensor: HpHS) for the long-term seawater pH monitoring to participate the Wendy Schmidt Ocean health XPRIZE. The HpHS has two types of pH sensors (i.e. potentiometric pH sensor and spectrophotometric pH sensor). The spectrophotometric pH sensor can measure pH correctly and stably, however it needs large power consumption and a lot of reagents in a long period of observation. The pH sensor used m-cresol purple (mCP) as an indicator of pH. On the other hand, although the potentiometric pH sensor is low power consumption and high-speed response (within 10 seconds), drifts in the pH of the potentiometric measurements may possibly occur for a long-term observation. The HpHS can measure in situ pH correctly and stably combining advantage of both pH sensors. The HpHS is correcting the value of the potentiometric pH (measuring frequently) by the value of the spectrophotometric pH (measuring less frequently). It is possible to calibrate in situ with Tris buffer or CRM on the spectrophotometric pH sensor. Therefore, the drifts in the value of potentiometric pH measurements can be compensated using the pH value obtained from the spectrophotometric pH measurements. Thereby, the HpHS can measure accurately the value of pH over a long period of time with low power consumption. In order to understand the seasonal and inter-annual variabilities of biogeochemical cycles and ecosystems, ship-based studies have been carried out since 1997 at time-series station K2 (47oN, 160oE) in the subarctic western North Pacific, which is a region with progression of ocean acidification. However, the ship-based studies of the open ocean have been limited in their ability to conduct high-frequency observations for understanding the

  6. Nanostructured silicon ferromagnet collected by a permanent neodymium magnet.

    PubMed

    Okuno, Takahisa; Thürmer, Stephan; Kanoh, Hirofumi

    2017-11-30

    Nanostructured silicon (N-Si) was prepared by anodic electroetching of p-type silicon wafers. The obtained magnetic particles were separated by a permanent neodymium magnet as a magnetic nanostructured silicon (mN-Si). The N-Si and mN-Si exhibited different magnetic properties: the N-Si exhibited ferromagnetic-like behaviour, whereas the mN-Si exhibited superparamagnetic-like behaviour.

  7. Narrow band gap amorphous silicon semiconductors

    DOEpatents

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  8. Field Performance of ISFET based Deep Ocean pH Sensors

    NASA Astrophysics Data System (ADS)

    Branham, C. W.; Murphy, D. J.

    2017-12-01

    Historically, ocean pH time series data was acquired from infrequent shipboard grab samples and measured using labor intensive spectrophotometry methods. However, with the introduction of robust and stable ISFET pH sensors for use in ocean applications a paradigm shift in the methods used to acquire long-term pH time series data has occurred. Sea-Bird Scientific played a critical role in the adoption this new technology by commercializing the SeaFET pH sensor and float pH Sensor developed by the MBARI chemical sensor group. Sea-Bird Scientific continues to advance this technology through a concerted effort to improve pH sensor accuracy and reliability by characterizing their performance in the laboratory and field. This presentation will focus on calibration of the ISFET pH sensor, evaluate its analytical performance, and validate performance using recent field data.

  9. Performance analysis of junction-less double Gate n-p-n impact ionization MOS transistor (JLDG n-IMOS)

    NASA Astrophysics Data System (ADS)

    Chauhan, Manvendra Singh; Chauhan, R. K.

    2018-04-01

    This paper demonstrates a Junction-less Double Gate n-p-n Impact ionization MOS transistor (JLDG n-IMOS) on a very light doped p-type silicon body. Device structure proposed in the paper is based on charge plasma concept. There is no metallurgical junctions in the proposed device and does not need any impurity doping to create the drain and source regions. Due to doping-less nature, the fabrication process is simple for JLDG n-IMOS. The double gate engineering in proposed device leads to reduction in avalanche breakdown via impact ionization, generating large number of carriers in drain-body junction, resulting high ION current, small IOFF current and great improvement in ION/IOFF ratio. The simulation and examination of the proposed device have been performed on ATLAS device simulatorsoftware.

  10. Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

    PubMed

    Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

    2015-04-08

    Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

  11. N-type compensated silicon: resistivity, crystal growth, carrier lifetime, and relevant application for HIT solar cells

    NASA Astrophysics Data System (ADS)

    Li, Shuai; Gao, Wenxiu; Li, Zhen; Cheng, Haoran; Lin, Jinxia; Cheng, Qijin

    2017-05-01

    N-type compensated silicon shows unusual distribution of resistivity as crystal grows compared to the n-type uncompensated silicon. In this paper, evolutions of resistivities with varied concentrations of boron and varied starting resistivities of the n-type silicon are intensively calculated. Moreover, reduction of carrier mobility is taken into account by Schindler’s modified model of carrier mobility for the calculation of resistivity of the compensated silicon. As for substrates of solar cells, optimized starting resistivity and corresponding concentration of boron are suggested for better uniformity of resistivity and higher yield (fraction with ρ >0.5 ~ Ω \\centerdot \\text{cm} ) of the n-type compensated Cz crystal rod. A two-step growth method is investigated to obtain better uniformity of resistivity of crystal rod, and this method is very practical especially for the n-type compensated silicon. Regarding the carrier lifetime, the recombination by shallow energy-level dopants is taken into account for the compensated silicon, and evolution of carrier lifetime is simulated by considering all main recombination centers which agrees well with our measured carrier lifetimes as crystal grows. The n-type compensated silicon shows a larger reduction of carrier lifetime compared to the uncompensated silicon at the beginning of crystal growth, and recombination with a oxygen-related deep defect is sufficient to describe the reduction of degraded lifetime. Finally, standard heterojunction with intrinsic thin-layer (HIT) solar cells are made with substrates from the n-type compensated silicon rod, and a high efficiency of 22.1% is obtained with a high concentration (0.8× {{10}16}~\\text{c}{{\\text{m}}-3} ) of boron in the n-type compensated silicon feedstock. However, experimental efficiencies of HIT solar cells based on the n-type compensated silicon show an average reduction of 4% along with the crystal length compared to the uncompensated silicon. The

  12. Highly Doped Polycrystalline Silicon Microelectrodes Reduce Noise in Neuronal Recordings In Vivo

    PubMed Central

    Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

    2013-01-01

    The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0–200 μV) and 2) test if noise amplitudes (0–15 μV) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9–10 kΩ for voltages typical of neural signal amplitudes (>150–200 μV). Acute multiunit measurements and noise measurements were made in n = 6 and n = 8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ± 10.13 pW) was significantly higher (p < 0.001) than the corresponding value in polycrystalline silicon microelectrodes (7.49 ± 2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements. PMID:20667815

  13. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

    DOE PAGES

    King, M. P.; Armstrong, A. M.; Dickerson, J. R.; ...

    2015-10-29

    Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 10 13 cm -2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaNmore » P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.« less

  14. Development of an underwater in-situ spectrophotometric sensor for seawater pH

    NASA Astrophysics Data System (ADS)

    Waterbury, Robert D.; Byrne, Robert H.; Kelly, John; Leader, Bram; McElligott, Sean; Russell, Randy

    1996-12-01

    A pH sensor based upon spectrophotometric techniques has been developed for in-situ analysis of surface seawater. This sensor utilizes a spectrophotometric pH indicator (Thymol Blue) which has been calibrated for use in seawater as a function of temperature and salinity. Shipboard spectrophotometric pH analyses routinely demonstrate a precision on the order of plus or minus 0.0004 pH units. In- situ analysis of seawater pH has demonstrated a precision on the order of plus or minus 0.001 and an accuracy, using shipboard measurements as a standard, on the order of plus or minus 0.01. The sensor is a self-contained system which pumps seawater, meters in indicator, spectrophotometrically determines indicator absorbance and stores data with a 1 Hz acquisition frequency. The sensor employs two absorbance cells, each with three wavelength channels, to obtain the spectrophotometric absorbance. The sensor system, rated for depths up to 500 m, provides pH, conductivity, temperature and can be operated via computer or in a standalone mode with internal data storage. The sensor utilizes less than 12 watts of power and is packaged in a 29' long by 4.5' diameter aluminum housing.

  15. Low-temperature TCT characterization of heavily proton irradiated p-type magnetic Czochralski silicon detectors

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Tuovinen, E.; Luukka, P.; Kassamakov, I.; Autioniemi, M.; Tuominen, E.; Sane, P.; Pusa, P.; Räisänen, J.; Eremin, V.; Verbitskaya, E.; Li, Z.

    2007-12-01

    n +/p -/p + pad detectors processed at the Microelectronics Center of Helsinki University of Technology on boron-doped p-type high-resistivity magnetic Czochralski (MCz-Si) silicon substrates have been investigated by the transient current technique (TCT) measurements between 100 and 240 K. The detectors were irradiated by 9 MeV protons at the Accelerator Laboratory of University of Helsinki up to 1 MeV neutron equivalent fluence of 2×10 15 n/cm 2. In some of the detectors the thermal donors (TD) were introduced by intentional heat treatment at 430 °C. Hole trapping time constants and full depletion voltage values were extracted from the TCT data. We observed that hole trapping times in the order of 10 ns were found in heavily (above 1×10 15 n eq/cm 2) irradiated samples. These detectors could be fully depleted below 500 V in the temperature range of 140-180 K.

  16. Improved light extraction efficiency in GaN-based light emitting diode by nano-scale roughening of p-GaN surface.

    PubMed

    Park, Sang Jae; Sadasivam, Karthikeyan Giri; Chung, Tae Hoon; Hong, Gi Cheol; Kim, Jin Bong; Kim, Sang Mook; Park, Si-Hyun; Jeon, Seong-Ran; Lee, June Key

    2008-10-01

    Improvement in light extraction efficiency of Ultra Violet-Light Emitting Diode (UV-LED) is achieved by nano-scale roughening of p-type Gallium Nitride (p-GaN) surface. The process of surface roughening is carried out by using self assembled gold (Au) nano-clusters with support of nano-size silicon-oxide (SiO2) pillars on p-GaN surface as a dry etching mask and by p-GaN regrowth in the regions not covered by the mask after dry etching. Au nano-clusters are formed by rapid thermal annealing (RTA) process carried out at 600 degrees C for 1 min using 15 nm thick Au layer on top of SiO2. The p-GaN roughness is controlled by p-GaN regrowth time. Four different time values of 15 sec, 30 sec, 60 sec and 120 sec are considered for p-GaN regrowth. Among the four different p-GaN regrowth time values 30 sec regrown p-GaN sample has the optimum roughness to increase the electroluminescence (EL) intensity to a value approximately 60% higher than the EL intensity of a conventional LED.

  17. Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

    NASA Astrophysics Data System (ADS)

    Lin, Guangyang; Yi, Xiaohui; Li, Cheng; Chen, Ningli; Zhang, Lu; Chen, Songyan; Huang, Wei; Wang, Jianyuan; Xiong, Xihuan; Sun, Jiaming

    2016-10-01

    A lateral p-Si0.05Ge0.95/i-Ge/n-Si0.05Ge0.95 heterojunction light emitting diode on a silicon-on-insulator (SOI) substrate was proposed, which is profitable to achieve higher luminous extraction compared to vertical junctions. Due to the high carrier injection ratio of heterostructures and optical reflection at the SiO2/Si interface of the SOI, strong room temperature electroluminescence (EL) at around 1600 nm from the direct bandgap of i-Ge with 0.30% tensile strain was observed. The EL peak intensity of the lateral heterojunction is enhanced by ˜4 folds with a larger peak energy than that of the vertical Ge p-i-n homojunction, suggesting that the light emitting efficiency of the lateral heterojunction is effectively improved. The EL peak intensity of the lateral heterojunction, which increases quadratically with injection current density, becomes stronger for diodes with a wider i-Ge region. The CMOS compatible fabrication process of the lateral heterojunctions paves the way for the integration of the light source with the Ge metal-oxide-semiconductor field-effect-transistor.

  18. Indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  19. Ohmic contacts to n-GaN formed by ion-implanted Si into p-GaN

    NASA Astrophysics Data System (ADS)

    Bao, Xichang; Xu, Jintong; Zhang, Wenjing; Wang, Ling; Chu, Kaihui; Li, Chao; Li, Xiangyang

    2009-07-01

    In this paper, we report the ohmic contact to n-GaN fabricated by implanting silicon into Mg-doped GaN using an alloy of Ti/Al/Ti/Au metallization. The used materials were grown on (001) sapphire substrates by metal-organic chemical-vapor deposition (MOCVD). The layer structure was comprised of a GaN buffer layer and followed by a 2 μm thickness Mg-doped GaN (Na=5×1017cm-3) and then double silicon implantation was performed in order to convert p-type GaN into n-type GaN films. The as-implanted samples were then thermal annealed at 1150 °C for 5 min in N2 ambient. The carrier concentration and Hall mobility were 3.13×1018 cm3 and 112 cm2/ (VÂ.s) measured by Hall method. Multilayer electrode of Ti (50 nm)/Al (50 nm)/Ti (30 nm)/Au (30 nm) was deposited on n-GaN using an electron-beam evaporation and contacts were formed by a N2 annealing technique ranging from 600 to 900 °C. After annealing lower than 700 °C, the contacts exhibited a rectifying behavior and became ohmic contact only after high temperature processes (>=700 °C). Specific contact resistance was as low as 9.58×10-4 ΩÂ.cm2 after annealing at 800 °C for 60 seconds. While annealing temperature is higher than 800 °C, the specific contact resistance becomes worse. This phenomenon is caused by the surface morphology degradation.

  20. Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li, Shaoyuan; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093; Ma, Wenhui, E-mail: mwhsilicon@163.com

    2014-05-01

    In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO{sub 3} system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO{sub 3} concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWsmore » is significantly reduced when Ag{sup +} ions concentrations are too high. The deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon. - Graphical abstract: Schematic cross-sectional views of PSiNWs array formation by etching oxidized silicon wafer in HF/AgNO{sub 3} solution. (A) At the starting point; (B) during the etching process; and (C) after Ag dendrites remove. - Highlights: • Prior to etching, a simple pre-oxidation is firstly used to treat silicon substrate. • The medially doped p-type MPSiNWs are prepared by one-step MACE. • Deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon are studied. • A model is finally proposed to explain the formation mechanism of PSiNWs.« less

  1. Development of a Dual Solid-State pH-AT Sensor

    NASA Astrophysics Data System (ADS)

    Briggs, E.; Martz, T. R.; Kummel, A.; Sandoval, S.; Erten, A.

    2016-02-01

    Here we report on our progress toward development of a solid state, reagentless sensor capable of rapid and simultaneous measurement of pH and Total Alkalinity (AT) using ion sensitive field effect transistor (ISFET) technology. The goal of this work is to provide a means of continuous, direct measurement of the seawater carbon dioxide system through measurement of two "master variables" (pH and AT). ISFET-based pH sensors that achieve 0.001 precision are presently in widespread use on autonomous oceanographic platforms. Modifications to an ISFET allow a nL-scale acid-base titration of total alkalinity to be carried out in 10 s. Titrant, H+, is generated through the electrolysis of water on the surface of the chip eliminating the requirement of external reagents. Initial characterization has been performed titrating individual components (i.e. OH-, HCO3-, CO32-, PO43-) of seawater AT. Based on previous work by others in simple acid-base systems and our preliminary results in seawater we feel that it is within reach to set a benchmark goal of 10 μmol kg-1 precision in AT. The estimated resolution of this dual pH-AT sensor translates to approximately 0.5 and 0.7% error in Total Dissolved Inorganic Carbon (CT) and pCO2 respectively and would have a number of immediate applications for investigating biogeochemical processes where strong gradients exist over short distances and in rapidly changing environments.

  2. RuO₂ pH Sensor with Super-Glue-Inspired Reference Electrode.

    PubMed

    Lonsdale, Wade; Wajrak, Magdalena; Alameh, Kamal

    2017-09-06

    A pH-sensitive RuO₂ electrode coated in a commercial cyanoacrylate adhesive typically exhibits very low pH sensitivity, and could be paired with a RuO₂ working electrode as a differential type pH sensor. However, such sensors display poor performance in real sample matrices. A pH sensor employing a RuO₂ pH-sensitive working electrode and a SiO₂-PVB junction-modified RuO₂ reference electrode is developed as an alternative high-performance solution. This sensor exhibits a performance similar to that of a commercial glass pH sensor in some common sample matrices, particularly, an excellent pH sensitivity of 55.7 mV/pH, a hysteresis as low as 2.7 mV, and a drift below 2.2 mV/h. The developed sensor structure opens the way towards the development of a simple, cost effective, and robust pH sensor for pH analysis in various sample matrices.

  3. Temperature and pH sensors based on graphenic materials.

    PubMed

    Salvo, P; Calisi, N; Melai, B; Cortigiani, B; Mannini, M; Caneschi, A; Lorenzetti, G; Paoletti, C; Lomonaco, T; Paolicchi, A; Scataglini, I; Dini, V; Romanelli, M; Fuoco, R; Di Francesco, F

    2017-05-15

    Point-of-care applications and patients' real-time monitoring outside a clinical setting would require disposable and durable sensors to provide better therapies and quality of life for patients. This paper describes the fabrication and performances of a temperature and a pH sensor on a biocompatible and wearable board for healthcare applications. The temperature sensor was based on a reduced graphene oxide (rGO) layer that changed its electrical resistivity with the temperature. When tested in a human serum sample between 25 and 43°C, the sensor had a sensitivity of 110±10Ω/°C and an error of 0.4±0.1°C compared with the reference value set in a thermostatic bath. The pH sensor, based on a graphene oxide (GO) sensitive layer, had a sensitivity of 40±4mV/pH in the pH range between 4 and 10. Five sensor prototypes were tested in a human serum sample over one week and the maximum deviation of the average response from reference values obtained by a glass electrode was 0.2pH units. For biological applications, the temperature and pH sensors were successfully tested for in vitro cytotoxicity with human fibroblast cells (MRC-5) over 24h. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Review on State-of-the-art in Polymer Based pH Sensors

    PubMed Central

    Korostynska, Olga; Arshak, Khalil; Gill, Edric; Arshak, Arousian

    2007-01-01

    This paper reviews current state-of-the-art methods of measuring pH levels that are based on polymer materials. These include polymer-coated fibre optic sensors, devices with electrodes modified with pH-sensitive polymers, fluorescent pH indicators, potentiometric pH sensors as well as sensors that use combinatory approach for ion concentration monitoring. PMID:28903277

  5. Silicone adhesive matrix of verapamil hydrochloride to provide pH-independent sustained release.

    PubMed

    Tolia, Gaurav; Li, S Kevin

    2014-02-01

    Providing pH-independent oral release of weakly basic drugs with conventional matrix tablets can be challenging because of the pH-dependent solubility characteristics of the drugs and the changing pH environment along the gastrointestinal tract. The aim of the present study was to use a hydrophobic polymer to overcome the issue of pH-dependent release of weakly basic model drug verapamil hydrochloride from matrix tablets without the use of organic buffers in the matrix formulations. Silicone pressure-sensitive adhesive (PSA) polymer was evaluated because of its unique properties of low surface energy, hydrophobicity, low glass transition temperature, high electrical resistance, and barrier to hydrogen ion diffusion. Drug release, hydrogen ion diffusion, tablet contact angle, and internal tablet microenvironment pH with matrix tablets prepared using PSA were compared with those using water-insoluble ethyl cellulose (EC). Silicone PSA films showed higher resistance to hydrogen ion diffusion compared with EC films. Verapamil hydrochloride tablets prepared using silicone PSA showed higher hydrophobicity and lower water uptake than EC tablets. Silicone PSA tablets also showed pH-independent release of verapamil and decreased in dimensions during drug dissolution. By contrast, verapamil hydrochloride tablets prepared using EC did not achieve pH-independent release.

  6. Fast-timing Capabilities of Silicon Sensors for the CMS High-Granularity Calorimeter at the High-Luminosity LHC

    NASA Astrophysics Data System (ADS)

    Akchurin, Nural; CMS Collaboration

    2017-11-01

    We report on the signal timing capabilities of thin silicon sensors when traversed by multiple simultaneous minimum ionizing particles (MIP). Three different planar sensors, 133, 211, and 285 μm thick in depletion thickness, have been exposed to high energy muons and electrons at CERN. We describe signal shape and timing resolution measurements as well as the response of these devices as a function of the multiplicity of MIPs. We compare these measurements to simulations where possible. We achieve better than 20 ps timing resolution for signals larger than a few tens of MIPs.

  7. Tracing the pH dependent activation of autophagy in cancer cells by silicon nanowire-based impedance biosensor.

    PubMed

    Alikhani, Alireza; Gharooni, Milad; Abiri, Hamed; Farokhmanesh, Fatemeh; Abdolahad, Mohammad

    2018-05-30

    Monitoring the pH dependent behavior of normal and cancer cells by impedimetric biosensor based on Silicon Nanowires (SiNWs) was introduced to diagnose the invasive cancer cells. Autophagy as a biologically activated process in invasive cancer cells during acidosis, protect them from apoptosis in lower pH which presented in our work. As the autophagy is the only activated pathways which can maintain cellular proliferation in acidic media, responses of SiNW-ECIS in acidified cells could be correlated to the probability of autophagy activation in normal or cancer cells. In contrast, cell survival pathway wasn't activated in low-grade cancer cells which resulted in their acidosis. The measured electrical resistance of MCF10, MCF7, and MDA-MB468 cell lines, by SiNW sensor, in normal and acidic media were matched by the biological analyses of their vital functions. Invasive cancer cells exhibited increased electrical resistance in pH 6.5 meanwhile the two other types of the breast cells exhibited sharp (MCF10) and moderate (MCF7) decrease in their resistance. This procedure would be a new trend in microenvironment based cancer investigation. Copyright © 2018 Elsevier B.V. All rights reserved.

  8. A Smart High Accuracy Silicon Piezoresistive Pressure Sensor Temperature Compensation System

    PubMed Central

    Zhou, Guanwu; Zhao, Yulong; Guo, Fangfang; Xu, Wenju

    2014-01-01

    Theoretical analysis in this paper indicates that the accuracy of a silicon piezoresistive pressure sensor is mainly affected by thermal drift, and varies nonlinearly with the temperature. Here, a smart temperature compensation system to reduce its effect on accuracy is proposed. Firstly, an effective conditioning circuit for signal processing and data acquisition is designed. The hardware to implement the system is fabricated. Then, a program is developed on LabVIEW which incorporates an extreme learning machine (ELM) as the calibration algorithm for the pressure drift. The implementation of the algorithm was ported to a micro-control unit (MCU) after calibration in the computer. Practical pressure measurement experiments are carried out to verify the system's performance. The temperature compensation is solved in the interval from −40 to 85 °C. The compensated sensor is aimed at providing pressure measurement in oil-gas pipelines. Compared with other algorithms, ELM acquires higher accuracy and is more suitable for batch compensation because of its higher generalization and faster learning speed. The accuracy, linearity, zero temperature coefficient and sensitivity temperature coefficient of the tested sensor are 2.57% FS, 2.49% FS, 8.1 × 10−5/°C and 29.5 × 10−5/°C before compensation, and are improved to 0.13%FS, 0.15%FS, 1.17 × 10−5/°C and 2.1 × 10−5/°C respectively, after compensation. The experimental results demonstrate that the proposed system is valid for the temperature compensation and high accuracy requirement of the sensor. PMID:25006998

  9. Nanowire size dependence on sensitivity of silicon nanowire field-effect transistor-based pH sensor

    NASA Astrophysics Data System (ADS)

    Lee, Ryoongbin; Kwon, Dae Woong; Kim, Sihyun; Kim, Sangwan; Mo, Hyun-Sun; Kim, Dae Hwan; Park, Byung-Gook

    2017-12-01

    In this study, we investigated the effects of nanowire size on the current sensitivity of silicon nanowire (SiNW) ion-sensitive field-effect transistors (ISFETs). The changes in on-current (I on) and resistance according to pH were measured in fabricated SiNW ISFETs of various lengths and widths. As a result, it was revealed that the sensitivity expressed as relative I on change improves as the width decreases. Through technology computer-aided design (TCAD) simulation analysis, the width dependence on the relative I on change can be explained by the observation that the target molecules located at the edge region along the channel width have a stronger effect on the sensitivity as the SiNW width is reduced. Additionally, the length dependence on the sensitivity can be understood in terms of the resistance ratio of the fixed parasitic resistance, including source/drain resistance, to the varying channel resistance as a function of channel length.

  10. Increased radiation resistance in lithium-counterdoped silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Mehta, S.

    1984-01-01

    Lithium-counterdoped n(+)p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n(+)p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T less than or equal to 100 C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature aneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen.

  11. A Temperature Sensor using a Silicon-on-Insulator (SOI) Timer for Very Wide Temperature Measurement

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik; Culley, Dennis E.

    2008-01-01

    A temperature sensor based on a commercial-off-the-shelf (COTS) Silicon-on-Insulator (SOI) Timer was designed for extreme temperature applications. The sensor can operate under a wide temperature range from hot jet engine compartments to cryogenic space exploration missions. For example, in Jet Engine Distributed Control Architecture, the sensor must be able to operate at temperatures exceeding 150 C. For space missions, extremely low cryogenic temperatures need to be measured. The output of the sensor, which consisted of a stream of digitized pulses whose period was proportional to the sensed temperature, can be interfaced with a controller or a computer. The data acquisition system would then give a direct readout of the temperature through the use of a look-up table, a built-in algorithm, or a mathematical model. Because of the wide range of temperature measurement and because the sensor is made of carefully selected COTS parts, this work is directly applicable to the NASA Fundamental Aeronautics/Subsonic Fixed Wing Program--Jet Engine Distributed Engine Control Task and to the NASA Electronic Parts and Packaging (NEPP) Program. In the past, a temperature sensor was designed and built using an SOI operational amplifier, and a report was issued. This work used an SOI 555 timer as its core and is completely new work.

  12. Properties of tree rings in LSST sensors

    DOE PAGES

    Park, H. Y.; Nomerotski, A.; Tsybychev, D.

    2017-05-30

    Images of uniformly illuminated sensors for the Large Synoptic Survey Telescope have circular periodic patterns with an appearance similar to tree rings. Furthermore, these patterns are caused by circularly symmetric variations of the dopant concentration in the monocrystal silicon boule induced by the manufacturing process. Non-uniform charge density results in the parasitic electric field inside the silicon sensor, which may distort shapes of astronomical sources. Here, we analyzed data from fifteen LSST sensors produced by ITL to determine the main parameters of the tree rings: amplitude and period, and also variability across the sensors tested at Brookhaven National Laboratory. Treemore » ring pattern has a weak dependence on the wavelength. But the ring amplitude gets smaller as wavelength gets longer, since longer wavelengths penetrate deeper into the silicon. Tree ring amplitude gets larger as it gets closer to the outer part of the wafer, from 0.1 to 1.0%, indicating that the resistivity variation is larger for larger radii.« less

  13. Properties of tree rings in LSST sensors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Park, H. Y.; Nomerotski, A.; Tsybychev, D.

    Images of uniformly illuminated sensors for the Large Synoptic Survey Telescope have circular periodic patterns with an appearance similar to tree rings. Furthermore, these patterns are caused by circularly symmetric variations of the dopant concentration in the monocrystal silicon boule induced by the manufacturing process. Non-uniform charge density results in the parasitic electric field inside the silicon sensor, which may distort shapes of astronomical sources. Here, we analyzed data from fifteen LSST sensors produced by ITL to determine the main parameters of the tree rings: amplitude and period, and also variability across the sensors tested at Brookhaven National Laboratory. Treemore » ring pattern has a weak dependence on the wavelength. But the ring amplitude gets smaller as wavelength gets longer, since longer wavelengths penetrate deeper into the silicon. Tree ring amplitude gets larger as it gets closer to the outer part of the wafer, from 0.1 to 1.0%, indicating that the resistivity variation is larger for larger radii.« less

  14. Hyperpolarized Amino Acid Derivatives as Multivalent Magnetic Resonance pH Sensor Molecules.

    PubMed

    Hundshammer, Christian; Düwel, Stephan; Ruseckas, David; Topping, Geoffrey; Dzien, Piotr; Müller, Christoph; Feuerecker, Benedikt; Hövener, Jan B; Haase, Axel; Schwaiger, Markus; Glaser, Steffen J; Schilling, Franz

    2018-02-15

    pH is a tightly regulated physiological parameter that is often altered in diseased states like cancer. The development of biosensors that can be used to non-invasively image pH with hyperpolarized (HP) magnetic resonance spectroscopic imaging has therefore recently gained tremendous interest. However, most of the known HP-sensors have only individually and not comprehensively been analyzed for their biocompatibility, their pH sensitivity under physiological conditions, and the effects of chemical derivatization on their logarithmic acid dissociation constant (p K a ). Proteinogenic amino acids are biocompatible, can be hyperpolarized and have at least two pH sensitive moieties. However, they do not exhibit a pH sensitivity in the physiologically relevant pH range. Here, we developed a systematic approach to tailor the p K a of molecules using modifications of carbon chain length and derivatization rendering these molecules interesting for pH biosensing. Notably, we identified several derivatives such as [1- 13 C]serine amide and [1- 13 C]-2,3-diaminopropionic acid as novel pH sensors. They bear several spin-1/2 nuclei ( 13 C, 15 N, 31 P) with high sensitivity up to 4.8 ppm/pH and we show that 13 C spins can be hyperpolarized with dissolution dynamic polarization (DNP). Our findings elucidate the molecular mechanisms of chemical shift pH sensors that might help to design tailored probes for specific pH in vivo imaging applications.

  15. Multiparametric Analyses Reveal the pH-Dependence of Silicon Biomineralization in Diatoms

    PubMed Central

    Hervé, Vincent; Derr, Julien; Douady, Stéphane; Quinet, Michelle; Moisan, Lionel; Lopez, Pascal Jean

    2012-01-01

    Diatoms, the major contributors of the global biogenic silica cycle in modern oceans, account for about 40% of global marine primary productivity. They are an important component of the biological pump in the ocean, and their assemblage can be used as useful climate proxies; it is therefore critical to better understand the changes induced by environmental pH on their physiology, silicification capability and morphology. Here, we show that external pH influences cell growth of the ubiquitous diatom Thalassiosira weissflogii, and modifies intracellular silicic acid and biogenic silica contents per cell. Measurements at the single-cell level reveal that extracellular pH modifications lead to intracellular acidosis. To further understand how variations of the acid-base balance affect silicon metabolism and theca formation, we developed novel imaging techniques to measure the dynamics of valve formation. We demonstrate that the kinetics of valve morphogenesis, at least in the early stages, depends on pH. Analytical modeling results suggest that acidic conditions alter the dynamics of the expansion of the vesicles within which silica polymerization occurs, and probably its internal pH. Morphological analysis of valve patterns reveals that acidification also reduces the dimension of the nanometric pores present on the valves, and concurrently overall valve porosity. Variations in the valve silica network seem to be more correlated to the dynamics and the regulation of the morphogenesis process than the silicon incorporation rate. These multiparametric analyses from single-cell to cell-population levels demonstrate that several higher-level processes are sensitive to the acid-base balance in diatoms, and its regulation is a key factor for the control of pattern formation and silicon metabolism. PMID:23144697

  16. Analyte chemisorption and sensing on n- and p-channel copper phthalocyanine thin-film transistors.

    PubMed

    Yang, Richard D; Park, Jeongwon; Colesniuc, Corneliu N; Schuller, Ivan K; Royer, James E; Trogler, William C; Kummel, Andrew C

    2009-04-28

    Chemical sensing properties of phthalocyanine thin-film transistors have been investigated using nearly identical n- and p-channel devices. P-type copper phthalocyanine (CuPc) has been modified with fluorine groups to convert the charge carriers from holes to electrons. The sensor responses to the tight binding analyte dimethyl methylphosphonate (DMMP) and weak binding analyte methanol (MeOH) were compared in air and N(2). The results suggest that the sensor response involves counterdoping of pre-adsorbed oxygen (O(2)). A linear dependence of chemical response to DMMP concentration was observed in both n- and p- type devices. For DMMP, there is a factor of 2.5 difference in the chemical sensitivity between n- and p-channel CuPc thin-film transistors, even though it has similar binding strength to n- and p-type CuPc molecules as indicated by the desorption times. The effect is attributed to the difference in the analyte perturbation of electron and hole trap energies in n- and p-type materials.

  17. Silicon-based microfabricated tin oxide gas sensor incorporating use of Hall effect measurement

    NASA Astrophysics Data System (ADS)

    Hammond, Joseph Wilson

    2000-10-01

    Characterization of a microfabricated sol-gel derived nano-particle tin oxide thin film on a silicon substrate, through simultaneous measurement of conductivity, Hall mobility and electron density, had not been accomplished before this study. Conductivity is a function of carrier density and Hall mobility. Therefore, a full understanding of the sensing mechanism of tin oxide requires knowledge of the sensor conductivity, electron density and Hall mobility. A tin oxide thin film (1100A thick), derived by the sol-gel method, was deposited on a Si/SiO2 substrate by means of spin coating method. The sol-gel method produces films of porous interconnected nano-sized particles and is relatively inexpensive and easy to produce compared to existing methods of tin oxide thin film deposition. A goal of this study was to determine the compatibility of sol-gel derived tin oxide thin films with silicon based microfabrication procedures. It was determined that conductivity sensitivity is strongly dependant on electron density level and shows very weak dependence on Hall mobility. Lack of Hall mobility sensitivity to H2 concentration suggests that conduction is grain control limited. In this regime, in which the grain size (D) is less than twice the characteristic Debye length (LD), a change in reducing gas concentration results in a nearly simultaneous change in carrier density throughout the entire grain, while the Hall mobility remains unchanged. The sensor calcined at 500°C and operated at 250°C showed maximum conductivity sensitivity to H2 in air. The sensor exhibited a high conductivity sensitivity of 10.6 to 100ppm H2 in air with response time of (˜1) minute and recovery time of (˜4) minutes. Images of the thin film surface, obtained by SEM, were used to study the effects of calcination temperature and operating conditions on the tin oxide structure. Sensitivity decreased as average grain size increased from 7.7nm to 14.7nm, with increasing calcination temperature from

  18. Design, Fabrication, and Experimental Validation of Novel Flexible Silicon-Based Dry Sensors for Electroencephalography Signal Measurements.

    PubMed

    Yu, Yi-Hsin; Lu, Shao-Wei; Liao, Lun-De; Lin, Chin-Teng

    2014-01-01

    Many commercially available electroencephalography (EEG) sensors, including conventional wet and dry sensors, can cause skin irritation and user discomfort owing to the foreign material. The EEG products, especially sensors, highly prioritize the comfort level during devices wear. To overcome these drawbacks for EEG sensors, this paper designs Societe Generale de Surveillance S [Formula: see text] A [Formula: see text] (SGS)-certified, silicon-based dry-contact EEG sensors (SBDSs) for EEG signal measurements. According to the SGS testing report, SBDSs extract does not irritate skin or induce noncytotoxic effects on L929 cells according to ISO10993-5. The SBDS is also lightweight, flexible, and nonirritating to the skin, as well as capable of easily fitting to scalps without any skin preparation or use of a conductive gel. For forehead and hairy sites, EEG signals can be measured reliably with the designed SBDSs. In particular, for EEG signal measurements at hairy sites, the acicular and flexible design of SBDS can push the hair aside to achieve satisfactory scalp contact, as well as maintain low skin-electrode interface impedance. Results of this paper demonstrate that the proposed sensors perform well in the EEG measurements and are feasible for practical applications.

  19. Double-pass Mach-Zehnder fiber interferometer pH sensor.

    PubMed

    Tou, Zhi Qiang; Chan, Chi Chiu; Hong, Jesmond; Png, Shermaine; Eddie, Khay Ming Tan; Tan, Terence Aik Huang

    2014-04-01

    A biocompatible fiber-optic pH sensor based on a unique double-pass Mach-Zehnder interferometer is proposed. pH responsive poly(2-hydroxyethyl methacrylate-co-2-(dimethylamino)ethyl methacrylate) hydrogel coating on the fiber swells/deswells in response to local pH, leading to refractive index changes that manifest as shifting of interference dips in the optical spectrum. The pH sensor is tested in spiked phosphate buffer saline and demonstrates high sensitivity of 1.71  nm/pH, pH 0.004 limit of detection with good responsiveness, repeatability, and stability. The proposed sensor has been successfully applied in monitoring the media pH in cell culture experiments to investigate the relationship between pH and cancer cell growth.

  20. Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

    NASA Astrophysics Data System (ADS)

    Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon

    2009-09-01

    In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.

  1. Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

    NASA Astrophysics Data System (ADS)

    Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

    2017-10-01

    We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

  2. High S/N ratio slotted step piezoresistive microcantilever designs for biosensors.

    PubMed

    Ansari, Mohd Zahid; Cho, Chongdu

    2013-03-26

    This study proposes new microcantilever designs in slotted step configuration to improve the S/N ratio of surface stress-based sensors used in physical, chemical, biochemical and biosensor applications. The cantilevers are made of silicon dioxide with a u-shaped silicon piezoresistor in p-doped. The cantilever step length and piezoresistor length is varied along with the operating voltage to characterise the surface stress sensitivity and thermal drifting sensitivity of the cantilevers when used as immunosensor. The numerical analysis is performed using ANSYS Multiphysics. Results show the surface stress sensitivity and the S/N ratio of the slotted step cantilevers is improved by more than 32% and 22%, respectively, over its monolithic counterparts.

  3. High S/N Ratio Slotted Step Piezoresistive Microcantilever Designs for Biosensors

    PubMed Central

    Ansari, Mohd Zahid; Cho, Chongdu

    2013-01-01

    This study proposes new microcantilever designs in slotted step configuration to improve the S/N ratio of surface stress-based sensors used in physical, chemical, biochemical and biosensor applications. The cantilevers are made of silicon dioxide with a u-shaped silicon piezoresistor in p-doped. The cantilever step length and piezoresistor length is varied along with the operating voltage to characterise the surface stress sensitivity and thermal drifting sensitivity of the cantilevers when used as immunosensor. The numerical analysis is performed using ANSYS Multiphysics. Results show the surface stress sensitivity and the S/N ratio of the slotted step cantilevers is improved by more than 32% and 22%, respectively, over its monolithic counterparts. PMID:23535637

  4. High-resolution and Fast-response Fiber-optic Temperature Sensor Using Silicon Fabry-Perot Cavity

    DTIC Science & Technology

    2015-03-23

    silver diaphragm,” Opt. Lett. 37(9), 1505–1507 (2012). 18. I. M. White and X. D. Fan , “On the performance quantification of resonant refractive index...to the response time, the package of a FBG with a copper tube encapsulation can greatly reduce the response time of the sensor from several seconds...head shown in Fig. 1(b) are described in Fig. 2. The fabrication started with bonding a 200-µm-thick double-side-polished silicon wafer on top of

  5. Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Evans, Laura J.; Okojie, Robert S.; Lukco, Dorothy

    2011-01-01

    We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

  6. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Yongjin, E-mail: wangyj@njupt.edu.cn; Zhu, Guixia; Gao, Xumin

    We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junctionmore » InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.« less

  7. High-Temperature Annealing as a Method for the Silicon Nanoclusters Growth in Stoichiometric Silicon Dioxide

    NASA Astrophysics Data System (ADS)

    Ivanova, E. V.; Dementev, P. A.; Sitnikova, A. A.; Aleksandrov, O. V.; Zamoryanskaya, M. V.

    2018-07-01

    A method for the growth of nanocomposite layers in stoichiometric amorphous silicon dioxide is proposed. It is shown that, after annealing at a temperature of 1150°C in nitrogen atmosphere, a layer containing silicon nanoclusters is formed. Silicon nanoclusters have a crystal structure and a size of 3-6 nm. In a film grown on a n-type substrate, a layer of silicon nanoclusters with a thickness of about 10 nm is observed. In the case of a film grown on a p-type substrate, a nanocomposite layer with a thickness of about 100 nm is observed. The difference in the formation of a nanocomposite layer in films on various substrates is associated with the doping of silicon dioxide with impurities from the substrate during the growth of the film. The formation of the nanocomposite layer was confirmed by transmission electron microscopy, XPS and local cathodoluminescence studies.

  8. Passivated p-type silicon: Hole injection tunable anode material for organic light emission

    NASA Astrophysics Data System (ADS)

    Zhao, W. Q.; Ran, G. Z.; Xu, W. J.; Qin, G. G.

    2008-02-01

    We find that hole injection can be enhanced simply by selecting a lower-resistivity p-Si anode to match an electron injection enhancement for organic light emitting diodes with ultrathin-SiO2-layer-passivated p-Si anode (Si-OLED). For a Si-OLED with ordinary AlQ electron transport layer, the optimized resistivity of the p-Si anode is 40Ωcm; for that with n-doped Bphen electron transport layer, it decreases to 5Ωcm. Correspondingly, the maximum power efficiency increases from 0.3to1.9lm /W, even higher than that of an indium tin oxide control device (1.4lm/W). This passivated p-type silicon is a hole injection tunable anode material for OLED.

  9. Embedded micro-sensor for monitoring pH in concrete structures

    NASA Astrophysics Data System (ADS)

    Srinivasan, Rengaswamy; Phillips, Terry E.; Bargeron, C. Brent; Carlson, Micah A.; Schemm, Elizabeth R.; Saffarian, Hassan M.

    2000-04-01

    Three major causes of corrosion of steel in concrete are chloride ions (Cl-), temperature (T) and acidity (pH). Under normal operating temperatures and with pH above 13, steel does not undergo pitting corrosion. In presence of Cl-, if the pH decreases below 12, the probability of pitting increases. Acid rain and atmospheric carbon dioxide cause the pH to drop in concrete, often leading to corrosion of the structure with the concomitant cost of repair or replacement. Currently, the pH level in concrete is estimated through destructive testing of the structures. Glass ISFET, and other pH sensors that need maintenance and calibration cannot be embedded in concrete. In this paper, we describe an inexpensive solid state pH sensor that can be embedded in concrete, to detect pH changes at the early stages. It employs a chemical reagent, trinitrobenzenesulfonic acid (TNBS) that exhibits changes in optical properties in the 12 - 14 pH range, and is held in a film of a sol-gel/TNBS composite on an optically transparent surface. A simple LED/filter/photodiode transducer monitors pH-induced changes in TNBS. Such a device needs no periodic calibration or maintenance. The optical window, the light-source and sensor can be easily housed and encapsulated in a chemically inert structure, and embedded in concrete.

  10. Miniature piezoresistive solid state integrated pressure sensors

    NASA Technical Reports Server (NTRS)

    Kahng, S. K.

    1980-01-01

    The characteristics of silicon pressure sensors with an ultra-small diaphragm are described. The pressure sensors utilize rectangular diaphragm as small as 0.0127 x 0.0254 cm and a p-type Wheatstone bridge consisting of diffused piezoresistive elements, 0.000254 cm by 0.00254 cm. These sensors exhibit as high as 0.5 MHz natural frequency and 1 mV/V/psi pressure sensitivity. Fabrication techniques and high frequency results from shock tube testing and low frequency comparison with microphones are presented.

  11. The MEMS process of a micro friction sensor

    NASA Astrophysics Data System (ADS)

    Yuan, Ming-Quan; Lei, Qiang; Wang, Xiong

    2018-02-01

    The research and testing techniques of friction sensor is an important support for hypersonic aircraft. Compared with the conventional skin friction sensor, the MEMS skin friction sensor has the advantages of small size, high sensitivity, good stability and dynamic response. The MEMS skin friction sensor can be integrated with other flow field sensors whose process is compatible with MEMS skin friction sensor to achieve multi-physical measurement of the flow field; and the micro-friction balance sensor array enable to achieve large area and accurate measurement for the near-wall flow. A MEMS skin friction sensor structure is proposed, which sensing element not directly contacted with the flow field. The MEMS fabrication process of the sensing element is described in detail. The thermal silicon oxide is used as the mask to solve the selection ratio problem of silicon DRIE. The optimized process parameters of silicon DRIE: etching power 1600W/LF power 100 W; SF6 flux 360 sccm; C4F8 flux 300 sccm; O2 flux 300 sccm. With Cr/Au mask, etch depth of glass shallow groove can be controlled in 30°C low concentration HF solution; the spray etch and wafer rotate improve the corrosion surface quality of glass shallow groove. The MEMS skin friction sensor samples were fabricated by the above MEMS process, and results show that the error of the length and width of the elastic cantilever is within 2 μm, the depth error of the shallow groove is less than 0.03 μm, and the static capacitance error is within 0.2 pF, which satisfy the design requirements.

  12. Formation of silicon carbide by laser ablation in graphene oxide-N-methyl-2-pyrrolidone suspension on silicon surface

    NASA Astrophysics Data System (ADS)

    Jaleh, Babak; Ghasemi, Samaneh; Torkamany, Mohammad Javad; Salehzadeh, Sadegh; Maleki, Farahnaz

    2018-01-01

    Laser ablation of a silicon wafer in graphene oxide-N-methyl-2-pyrrolidone (GO-NMP) suspension was carried out with a pulsed Nd:YAG laser (pulse duration = 250 ns, wavelength = 1064 nm). The surface of silicon wafer before and after laser ablation was studied using optical microscopy, scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The results showed that the ablation of silicon surface in liquid by pulsed laser was done by the process of melt expulsion under the influence of the confined plasma-induced pressure or shock wave trapped between the silicon wafer and the liquid. The X-ray diffraction‌ (XRD) pattern of Si wafer after laser ablation showed that 4H-SiC layer is formed on its surface. The formation of the above layer was also confirmed by Raman spectroscopy, and X-ray photoelectron spectroscopy‌ (XPS), as well as EDX was utilized. The reflectance of samples decreased with increasing pulse energy. Therefore, the morphological alteration and the formation of SiC layer at high energy increase absorption intensity in the UV‌-vis regions. Theoretical calculations confirm that the formation of silicon carbide from graphene oxide and silicon wafer is considerably endothermic. Development of new methods for increasing the reflectance without causing harmful effects is still an important issue for crystalline Si solar cells. By using the method described in this paper, the optical properties of solar cells can be improved.

  13. Monolithic Integration of a Silicon Nanowire Field-Effect Transistors Array on a Complementary Metal-Oxide Semiconductor Chip for Biochemical Sensor Applications

    PubMed Central

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2017-01-01

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I−V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs. PMID:26348408

  14. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    PubMed

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  15. Evaluation of the performance of irradiated silicon strip sensors for the forward detector of the ATLAS Inner Tracker Upgrade

    NASA Astrophysics Data System (ADS)

    Mori, R.; Allport, P. P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Kuczewski, P.; Lynn, D.; Arratia-Munoz, M. I.; Hommels, L. B. A.; Ullan, M.; Fleta, C.; Fernandez-Tejero, J.; Bloch, I.; Gregor, I. M.; Lohwasser, K.; Poley, L.; Tackmann, K.; Trofimov, A.; Yildirim, E.; Hauser, M.; Jakobs, K.; Kuehn, S.; Mahboubi, K.; Parzefall, U.; Clark, A.; Ferrere, D.; Sevilla, S. Gonzalez; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; McMullen, T.; McEwan, F.; O'Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Stastny, J.; Mikestikova, M.; Bevan, A.; Beck, G.; Milke, C.; Domingo, M.; Fadeyev, V.; Galloway, Z.; Hibbard-Lubow, D.; Liang, Z.; Sadrozinski, H. F.-W.; Seiden, A.; To, K.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Jinnouchi, O.; Hara, K.; Sato, K.; Sato, K.; Hagihara, M.; Iwabuchi, S.; Bernabeu, J.; Civera, J. V.; Garcia, C.; Lacasta, C.; Garcia, S. Marti i.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.

    2016-09-01

    The upgrade to the High-Luminosity LHC foreseen in about ten years represents a great challenge for the ATLAS inner tracker and the silicon strip sensors in the forward region. Several strip sensor designs were developed by the ATLAS collaboration and fabricated by Hamamatsu in order to maintain enough performance in terms of charge collection efficiency and its uniformity throughout the active region. Of particular attention, in the case of a stereo-strip sensor, is the area near the sensor edge where shorter strips were ganged to the complete ones. In this work the electrical and charge collection test results on irradiated miniature sensors with forward geometry are presented. Results from charge collection efficiency measurements show that at the maximum expected fluence, the collected charge is roughly halved with respect to the one obtained prior to irradiation. Laser measurements show a good signal uniformity over the sensor. Ganged strips have a similar efficiency as standard strips.

  16. Sensitivity encoded silicon photomultiplier--a new sensor for high-resolution PET-MRI.

    PubMed

    Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

    2013-07-21

    Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm(3). For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

  17. Sensitivity encoded silicon photomultiplier—a new sensor for high-resolution PET-MRI

    NASA Astrophysics Data System (ADS)

    Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

    2013-07-01

    Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm3. For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

  18. Surface States and Effective Surface Area on Photoluminescent P-Type Porous Silicon

    NASA Technical Reports Server (NTRS)

    Weisz, S. Z.; Porras, A. Ramirez; Resto, O.; Goldstein, Y.; Many, A.; Savir, E.

    1997-01-01

    The present study is motivated by the possibility of utilizing porous silicon for spectral sensors. Pulse measurements on the porous-Si/electrolyte system are employed to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. Such measurements were combined with studies of the photoluminescence spectra. These spectra were found to shift progressively to the blue as a function of anodization time. The luminescence intensity increases initially with anodization time, reaches a maximum and then decreases with further anodization. The surface state density, on the other hand, increases with anodization time from an initial value of about 2 x 10(exp 12)/sq cm surface to about 1013 sq cm for the anodized surface. This value is attained already after -2 min anodization and upon further anodization remains fairly constant. In parallel, the effective surface area increases by a factor of 10-30. This behavior is markedly different from the one observed previously for n-type porous Si.

  19. A proteorhodopsin-based biohybrid light-powering pH sensor.

    PubMed

    Rao, Siyuan; Guo, Zhibin; Liang, Dawei; Chen, Deliang; Wei, Yen; Xiang, Yan

    2013-10-14

    The biohybrid sensor is an emerging technique for multi-functional detection that utilizes the instinctive responses or interactions of biomolecules. We develop a biohybrid pH sensor by taking advantage of the pH-dependent photoelectric characteristics of proteorhodopsin (pR). The transient absorption kinetics study indicates that the photoelectric behavior of pR is attributed to the varying lifetime of the M intermediate at different environmental pH values. This pR-based biohybrid light-powering sensor with microfluidic design can achieve real-time pH detection with quick response and high sensitivity. The results of this work would shed light on pR and its potential applications.

  20. RuO2 pH Sensor with Super-Glue-Inspired Reference Electrode

    PubMed Central

    Wajrak, Magdalena; Alameh, Kamal

    2017-01-01

    A pH-sensitive RuO2 electrode coated in a commercial cyanoacrylate adhesive typically exhibits very low pH sensitivity, and could be paired with a RuO2 working electrode as a differential type pH sensor. However, such sensors display poor performance in real sample matrices. A pH sensor employing a RuO2 pH-sensitive working electrode and a SiO2-PVB junction-modified RuO2 reference electrode is developed as an alternative high-performance solution. This sensor exhibits a performance similar to that of a commercial glass pH sensor in some common sample matrices, particularly, an excellent pH sensitivity of 55.7 mV/pH, a hysteresis as low as 2.7 mV, and a drift below 2.2 mV/h. The developed sensor structure opens the way towards the development of a simple, cost effective, and robust pH sensor for pH analysis in various sample matrices. PMID:28878182

  1. Chemical bonding in silicon-carbene complexes.

    PubMed

    Liu, Z

    2009-06-04

    The bonding situations in the newly synthesized silicon-carbene complexes with formulas L:SiCl4, L:(Cl)Si-Si(Cl):L, and L:Si=Si:L (where L: is an N-heterocyclic carbene), are reported using density functional theory at the BP86/TZ2P level. The bonding analysis clearly shows that the bonding situation in the silicon-carbene complexes cannot be described in terms of donor-acceptor interactions depicted in the Dewar-Chatt-Duncanson model. The energy decomposition analysis (EDA) shows that the electrostatic attraction plays an important or even dominant role for the Si-C(carbene) binding interactions in the silicon-carbene complexes. That the molecular orbitals of the silicon-carbene complexes are lower in energy than the parent orbitals of carbenes indicates that these complexes are better described as stabilized carbene complexes.

  2. Development of GaN-based microchemical sensor nodes

    NASA Technical Reports Server (NTRS)

    Prokopuk, Nicholas; Son, Kyung-Ah; George, Thomas; Moon, Jeong S.

    2005-01-01

    Sensors based III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.

  3. WO3 nanoparticle-based conformable pH sensor.

    PubMed

    Santos, Lídia; Neto, Joana P; Crespo, Ana; Nunes, Daniela; Costa, Nuno; Fonseca, Isabel M; Barquinha, Pedro; Pereira, Luís; Silva, Jorge; Martins, Rodrigo; Fortunato, Elvira

    2014-08-13

    pH is a vital physiological parameter that can be used for disease diagnosis and treatment as well as in monitoring other biological processes. Metal/metal oxide based pH sensors have several advantages regarding their reliability, miniaturization, and cost-effectiveness, which are critical characteristics for in vivo applications. In this work, WO3 nanoparticles were electrodeposited on flexible substrates over metal electrodes with a sensing area of 1 mm(2). These sensors show a sensitivity of -56.7 ± 1.3 mV/pH, in a wide pH range of 9 to 5. A proof of concept is also demonstrated using a flexible reference electrode in solid electrolyte with a curved surface. A good balance between the performance parameters (sensitivity), the production costs, and simplicity of the sensors was accomplished, as required for wearable biomedical devices.

  4. Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Horibe, Kosuke; Oda, Shunri; Kodera, Tetsuo, E-mail: kodera.t.ac@m.titech.ac.jp

    2015-02-23

    Silicon quantum dot (QD) devices with a proximal single-electron transistor (SET) charge sensor have been fabricated in a metal-oxide-semiconductor structure based on a silicon-on-insulator substrate. The charge state of the QDs was clearly read out using the charge sensor via the SET current. The lithographically defined small QDs enabled clear observation of the few-electron regime of a single QD and a double QD by charge sensing. Tunnel coupling on tunnel barriers of the QDs can be controlled by tuning the top-gate voltages, which can be used for manipulation of the spin quantum bit via exchange interaction between tunnel-coupled QDs. Themore » lithographically defined silicon QD device reported here is technologically simple and does not require electrical gates to create QD confinement potentials, which is advantageous for the integration of complicated constructs such as multiple QD structures with SET charge sensors for the purpose of spin-based quantum computing.« less

  5. Thermal Characterization of Dynamic Silicon Cantilever Array Sensors by Digital Holographic Microscopy

    PubMed Central

    Zakerin, Marjan; Novak, Antonin; Toda, Masaya; Emery, Yves; Natalio, Filipe; Butt, Hans-Jürgen; Berger, Rüdiger

    2017-01-01

    In this paper, we apply a digital holographic microscope (DHM) in conjunction with stroboscopic acquisition synchronization. Here, the temperature-dependent decrease of the first resonance frequency (S1(T)) and Young’s elastic modulus (E1(T)) of silicon micromechanical cantilever sensors (MCSs) are measured. To perform these measurements, the MCSs are uniformly heated from T0 = 298 K to T = 450 K while being externally actuated with a piezo-actuator in a certain frequency range close to their first resonance frequencies. At each temperature, the DHM records the time-sequence of the 3D topographies for the given frequency range. Such holographic data allow for the extracting of the out-of-plane vibrations at any relevant area of the MCSs. Next, the Bode and Nyquist diagrams are used to determine the resonant frequencies with a precision of 0.1 Hz. Our results show that the decrease of resonance frequency is a direct consequence of the reduction of the silicon elastic modulus upon heating. The measured temperature dependence of the Young’s modulus is in very good accordance with the previously-reported values, validating the reliability and applicability of this method for micromechanical sensing applications. PMID:28545236

  6. Bis(tri-n-hexylsilyl oxide) silicon phthalocyanine: a unique additive in ternary bulk heterojunction organic photovoltaic devices.

    PubMed

    Lessard, Benoît H; Dang, Jeremy D; Grant, Trevor M; Gao, Dong; Seferos, Dwight S; Bender, Timothy P

    2014-09-10

    Previous studies have shown that the use of bis(tri-n-hexylsilyl oxide) silicon phthalocyanine ((3HS)2-SiPc) as an additive in a P3HT:PC61BM cascade ternary bulk heterojunction organic photovoltaic (BHJ OPV) device results in an increase in the short circuit current (J(SC)) and efficiency (η(eff)) of up to 25% and 20%, respectively. The previous studies have attributed the increase in performance to the presence of (3HS)2-SiPc at the BHJ interface. In this study, we explored the molecular characteristics of (3HS)2-SiPc which makes it so effective in increasing the OPV device J(SC) and η(eff. Initially, we synthesized phthalocyanine-based additives using different core elements such as germanium and boron instead of silicon, each having similar frontier orbital energies compared to (3HS)2-SiPc and tested their effect on BHJ OPV device performance. We observed that addition of bis(tri-n-hexylsilyl oxide) germanium phthalocyanine ((3HS)2-GePc) or tri-n-hexylsilyl oxide boron subphthalocyanine (3HS-BsubPc) resulted in a nonstatistically significant increase in JSC and η(eff). Secondly, we kept the silicon phthalocyanine core and substituted the tri-n-hexylsilyl solubilizing groups with pentadecyl phenoxy groups and tested the resulting dye in a BHJ OPV. While an increase in JSC and η(eff) was observed at low (PDP)2-SiPc loadings, the increase was not as significant as (3HS)2-SiPc; therefore, (3HS)2-SiPc is a unique additive. During our study, we observed that (3HS)2-SiPc had an extraordinary tendency to crystallize compared to the other compounds in this study and our general experience. On the basis of this observation, we have offered a hypothesis that when (3HS)2-SiPc migrates to the P3HT:PC61BM interface the reason for its unique performance is not solely due to its frontier orbital energies but also might be due to a high driving force for crystallization.

  7. Self-aligned Ni-P ohmic contact scheme for silicon solar cells by electroless deposition

    NASA Astrophysics Data System (ADS)

    Lee, Eun Kyung; Lim, Dong Chan; Lee, Kyu Hwan; Lim, Jae-Hong

    2012-08-01

    We report a Ni-P metallization scheme for low resistance ohmic contacts to n-type Si for silicon solar cells. As-deposited Ni-P contacts to n-type Si showed a specific contact resistance of 6.42 × 10-4 Ω·cm2. The specific contact resistance decreased with increasing thermal annealing temperature. When the Ni-P contact was annealed at 600°C for 30 min in ambient air, the specific contact resistance was greatly decreased, to 6.37 × 10-5Ω·cm2. The improved ohmic property was attributed to the decrease in the work function due to the formation of Ni-silicides from Ni in-diffusion during the thermal annealing process. Effects of the annealing process on the electrical and crystal properties of the contacts were investigated by means of various resistivity measurements (circular transmission line method (c-TLM), 4-point probe), glancing angle x-ray diffraction (GAXRD), and x-ray photoelectron spectroscopy (XPS).

  8. Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate

    NASA Astrophysics Data System (ADS)

    Mizoguchi, Seiya; Shimatani, Naoki; Kobayashi, Mizuki; Makino, Takaomi; Yamaoka, Yu; Kodera, Tetsuo

    2018-04-01

    We study hole transport properties in physically defined p-type silicon quantum dots (QDs) on a heavily doped silicon-on-insulator (SOI) substrate. We observe Coulomb diamonds using single QDs and estimate the charging energy as ∼1.6 meV. We obtain the charge stability diagram of double QDs using single QDs as a charge sensor. This is the first demonstration of charge sensing in p-type heavily doped silicon QDs. For future time-resolved measurements, we apply radio-frequency reflectometry using impedance matching of LC circuits to the device. We observe the resonance and estimate the capacitance as ∼0.12 pF from the resonant frequency. This value is smaller than that of the devices with top gates on nondoped SOI substrate. This indicates that high-frequency signals can be applied efficiently to p-type silicon QDs without top gates.

  9. Lifetime degradation of n-type Czochralski silicon after hydrogenation

    NASA Astrophysics Data System (ADS)

    Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

    2018-04-01

    Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

  10. Varying potential silicon carbide gas sensor

    NASA Technical Reports Server (NTRS)

    Shields, Virgil B. (Inventor); Ryan, Margaret A. (Inventor); Williams, Roger M. (Inventor)

    1997-01-01

    A hydrocarbon gas detection device operates by dissociating or electro-chemically oxidizing hydrocarbons adsorbed to a silicon carbide detection layer. Dissociation or oxidation are driven by a varying potential applied to the detection layer. Different hydrocarbon species undergo reaction at different applied potentials so that the device is able to discriminate among various hydrocarbon species. The device can operate at temperatures between 100.degree. C. and at least 650.degree. C., allowing hydrocarbon detection in hot exhaust gases. The dissociation reaction is detected either as a change in a capacitor or, preferably, as a change of current flow through an FET which incorporates the silicon carbide detection layers. The silicon carbide detection layer can be augmented with a pad of catalytic material which provides a signal without an applied potential. Comparisons between the catalytically produced signal and the varying potential produced signal may further help identify the hydrocarbon present.

  11. Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs.

    PubMed

    Xu, Kaikai

    2013-09-20

    In this paper, the emission of visible light by a monolithically integrated silicon p-n junction under reverse-bias is discussed. The modulation of light intensity is achieved using an insulated-gate terminal on the surface of the p-n junction. By varying the gate voltage, the breakdown voltage of the p-n junction will be adjustable so that the reverse current I(sub) flowing through the p-n junction at a fixed reverse-bias voltage is changed. It is observed that the light, which is emitted from the defects located at the p-n junction, depends closely on the reverse current I(sub). In regard to the phenomenon of electroluminescence, the relationship between the optical emission power and the reverse current I(sub) is linear. On the other hand, it is observed that both the quantum efficiency and the power conversion efficiency are able to have obvious enhancement, although the reverse-bias of the p-n junction is reduced and the corresponding reverse-current is much lower. Moreover, the successful fabrication on monolithic silicon light source on the bulk silicon by means of standard silicon complementary metal-oxide-semiconductor process technology is presented.

  12. Silicon availability modifies nutrient use efficiency and content, C:N:P stoichiometry, and productivity of winter wheat (Triticum aestivum L.)

    NASA Astrophysics Data System (ADS)

    Neu, Silke; Schaller, Jörg; Dudel, E. Gert

    2017-01-01

    Silicon (Si) is known as beneficial element for graminaceous plants. The importance of Si for plant functioning of cereals was recently emphasized. However, about the effect of Si availability on biomass production, grain yield, nutrient status and nutrient use efficiency for wheat (Triticum aestivum L.), as one of the most important crop plants worldwide, less is known so far. Consequently, we assessed the effect of a broad range of supply levels of amorphous SiO2 on wheat plant performance. Our results revealed that Si is readily taken up and accumulated basically in aboveground vegetative organs. Carbon (C) and phosphorus (P) status of plants were altered in response to varying Si supply. In bulk straw biomass C concentration decreased with increasing Si supply, while P concentration increased from slight limitation towards optimal nutrition. Thereby, aboveground biomass production increased at low to medium supply levels of silica whereas grain yield increased at medium supply level only. Nutrient use efficiency was improved by Si insofar that biomass production was enhanced at constant nitrogen (N) status of substrate and plants. Consequently, our findings imply fundamental influences of Si on C turnover, P availability and nitrogen use efficiency for wheat as a major staple crop.

  13. Flow sensor based on monolithic integration of organic light-emitting diodes (OLEDs) and CMOS circuits

    NASA Astrophysics Data System (ADS)

    Reckziegel, S.; Kreye, D.; Puegner, T.; Vogel, U.; Scholles, M.; Grillberger, C.; Fehse, K.

    2009-02-01

    In this paper we present an optoelectronic integrated circuit (OEIC) based on monolithic integration of organic lightemitting diodes (OLEDs) and CMOS technology. By the use of integrated circuits, photodetectors and highly efficient OLEDs on the same silicon chip, novel OEICs with combined sensors and actuating elements can be realized. The OLEDs are directly deposited on the CMOS top metal. The metal layer serves as OLED bottom electrode and determines the bright area. Furthermore, the area below the OLED electrodes can be used for integrated circuits. The monolithic integration of actuators, sensors and electronics on a common silicon substrate brings significant advantages in most sensory applications. The developed OEIC combines three different types of sensors: a reflective sensor, a color sensor and a particle flow sensor and is configured with an orange (597nm) emitting p-i-n OLED. We describe the architecture of such a monolithic OEIC and demonstrate a method to determine the velocity of a fluid being conveyed pneumatically in a transparent capillary. The integrated OLEDs illuminate the capillary with the flowing fluid. The fluid has a random reflection profile. Depending on the velocity and a random contrast difference, more or less light is reflected back to the substrate. The integrated photodiodes located at different fixed points detect the reflected light and using crosscorrelation, the velocity is calculated from the time in which contrast differences move over a fixed distance.

  14. Design of a highly sensitive ethanol sensor using a nano-coaxial p-Co3O4/n-TiO2 heterojunction synthesized at low temperature.

    PubMed

    Liang, Y Q; Cui, Z D; Zhu, S L; Li, Z Y; Yang, X J; Chen, Y J; Ma, J M

    2013-11-21

    In this paper, we describe the design, fabrication and gas-sensing tests of nano-coaxial p-Co3O4/n-TiO2 heterojunction. Specifically, uniform TiO2 nanotubular arrays have been assembled by anodization and used as templates for generation of the Co3O4 one-dimensional nanorods. The structure morphology and composition of as-prepared products have been characterized by SEM, XRD, TEM, and XPS. A possible growth mechanism governing the formation of such nano-coaxial heterojunctions is proposed. The TiO2 nanotube sensor shows a normal n-type response to reducing ethanol gas, whereas TiO2-Co3O4 exhibits p-type response with excellent sensing performances. This conversion of sensing behavior can be explained by the formation of p-n heterojunction structures. A possible sensing mechanism is also illustrated, which can provide theoretical guidance for the further development of advanced gas-sensitive materials with p-n heterojunction.

  15. Sensors and Micromachined Devices for the Automotive and New Markets: The Delphi Delco Electronics MEMS Story.

    NASA Astrophysics Data System (ADS)

    Logsdon, James

    2002-03-01

    This presentation will provide a brief history of the development of MEMS products and technology, beginning with the manifold absolute pressure sensor in the late seventies through the current variety of Delphi Delco Electronics sensors available today. The technology development of micromachining from uncompensated P plus etch stops to deep reactive ion etching and the technology development of wafer level packaging from electrostatic bonding to glass frit sealing and silicon to silicon direct bonding will be reviewed.

  16. The pH dependence of silicon-iron interaction in rats.

    PubMed

    Jia, X; Emerick, R J; Kayongo-Male, H

    1997-01-01

    A 2 x 2 x 3 factorial experiment was conducted to study the pH dependence of a silicon-iron interaction in vivo. The dietary treatments used in the factorial design were the following (mg/kg of diet): silicon, 0 and 500; iron, 35 and 187; acid-base, ammonium chloride as 0.5% of total diet (acidic), sodium bicarbonate as 1.0% of total diet (basic), or no supplementation of acid or base (control). The supplementation of 500 mg silicon/kg of diet increased plasma-iron concentration in rats fed the acidic or control diets, but not in rats fed the basic diet. A high dietary-iron level suppressed copper absorption and utilization and subsequently imposed a negative effect on its own utilization. An increase in the plasma total-cholesterol concentration caused by high dietary-iron level was likely a consequence of the antagonistic effect of iron on copper absorption and utilization. The use of cupric sulfate pentahydrate as the dietary-copper source in this study resulted in plasma copper concentrations that were approximately twice those obtained in a related study using cupric carbonate. Also, a 42% coefficient of variation (C.V.) for plasma-copper concentrations of rats fed cupric sulfate in this study was greatly reduced from the C.V. = 108% previously associated with the dietary cupric carbonate.

  17. Various vibration modes in a silicon ring resonator driven by p–n diode actuators formed in the lateral direction

    NASA Astrophysics Data System (ADS)

    Tsushima, Takafumi; Asahi, Yoichi; Tanigawa, Hiroshi; Furutsuka, Takashi; Suzuki, Kenichiro

    2018-06-01

    In this paper, we describe p–n diode actuators that are formed in the lateral direction on resonators. Because previously reported p–n diode actuators, which were driven by a force parallel to the electrostatic force induced in a p–n diode, were fabricated in the perpendicular direction to the surface, the fabrication process to satisfy the requirement of realizing a p–n junction set in the middle of the plate thickness has been difficult. The resonators in this work are driven by p–n diodes formed in the lateral direction, making the process easy. We have fabricated a silicon ring resonator that has in-plane vibration using p–n–p and n–p–n diode actuators formed in the lateral direction. First, we consider a space charge model that can sufficiently accurately describe the force induced in p–n diode actuators and compare it with the capacitance model used in most computer simulations. Then, we show that multiplying the vibration amplitude calculated by computer simulation by the modification coefficient of 4/3 provides the vibration amplitude in the p–n diode actuators. Good agreement of the theory with experimental results of the in-plane vibration measured for silicon ring resonators is obtained. The computer simulation is very useful for evaluating various vibration modes in resonators driven by the p–n diode actuators. The small amplitude of the p–n diode actuator measured in this work is expected to increase greatly with increased doping of the actuator.

  18. Microelectromechanical systems contact stress sensor

    DOEpatents

    Kotovsky, Jack

    2007-12-25

    A microelectromechanical systems stress sensor comprising a microelectromechanical systems silicon body. A recess is formed in the silicon body. A silicon element extends into the recess. The silicon element has limited freedom of movement within the recess. An electrical circuit in the silicon element includes a piezoresistor material that allows for sensing changes in resistance that is proportional to bending of the silicon element.

  19. Making Porous Luminescent Regions In Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W.; Jones, Eric W.

    1994-01-01

    Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

  20. Nanomechanical DNA origami pH sensors.

    PubMed

    Kuzuya, Akinori; Watanabe, Ryosuke; Yamanaka, Yusei; Tamaki, Takuya; Kaino, Masafumi; Ohya, Yuichi

    2014-10-16

    Single-molecule pH sensors have been developed by utilizing molecular imaging of pH-responsive shape transition of nanomechanical DNA origami devices with atomic force microscopy (AFM). Short DNA fragments that can form i-motifs were introduced to nanomechanical DNA origami devices with pliers-like shape (DNA Origami Pliers), which consist of two levers of 170-nm long and 20-nm wide connected at a Holliday-junction fulcrum. DNA Origami Pliers can be observed as in three distinct forms; cross, antiparallel and parallel forms, and cross form is the dominant species when no additional interaction is introduced to DNA Origami Pliers. Introduction of nine pairs of 12-mer sequence (5'-AACCCCAACCCC-3'), which dimerize into i-motif quadruplexes upon protonation of cytosine, drives transition of DNA Origami Pliers from open cross form into closed parallel form under acidic conditions. Such pH-dependent transition was clearly imaged on mica in molecular resolution by AFM, showing potential application of the system to single-molecular pH sensors.

  1. Low energy scattering cross section ratios of 14N(p ,p ) 14N

    NASA Astrophysics Data System (ADS)

    deBoer, R. J.; Bardayan, D. W.; Görres, J.; LeBlanc, P. J.; Manukyan, K. V.; Moran, M. T.; Smith, K.; Tan, W.; Uberseder, E.; Wiescher, M.; Bertone, P. F.; Champagne, A. E.; Islam, M. S.

    2015-04-01

    Background: The slowest reaction in the first CNO cycle is 14N(p ,γ ) 15O , therefore its rate determines the overall energy production efficiency of the entire cycle. The cross section presents several strong resonance contributions, especially for the ground-state transition. Some of the properties of the corresponding levels in the 15O compound nucleus remain uncertain, which affects the uncertainty in extrapolating the capture cross section to the low energy range of astrophysical interest. Purpose: The 14N(p ,γ ) 15O cross section can be described by using the phenomenological R matrix. Over the energy range of interest, only the proton and γ -ray channels are open. Since resonance capture makes significant contributions to the 14N(p ,γ ) 15O cross section, resonant proton scattering data can be used to provide additional constraints on the R -matrix fit of the capture data. Methods: A 4 MV KN Van de Graaff accelerator was used to bombard protons onto a windowless gas target containing enriched 14N gas over the proton energy range from Ep=1.0 to 3.0 MeV. Scattered protons were detected at θlab=90 , 120∘, 135∘, 150∘, and 160∘ using ruggedized silicon detectors. In addition, a 10 MV FN Tandem Van de Graaff accelerator was used to accelerate protons onto a solid Adenine (C5H5N5 ) target, of natural isotopic abundance, evaporated onto a thin self-supporting carbon backing, over the energy range from Ep=1.8 to 4.0 MeV. Scattered protons were detected at 28 angles between θlab=30 .4∘ and 167 .7∘ by using silicon photodiode detectors. Results: Relative cross sections were extracted from both measurements. While the relative cross sections do not provide as much constraint as absolute measurements, they greatly reduce the dependence of the data on otherwise significant systematic uncertainties, which are more difficult to quantify. The data are fit simultaneously using an R -matrix analysis and level energies and proton widths are extracted. Even

  2. Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.

    PubMed

    Nishio, Kengo; Yayama, Tomoe; Miyazaki, Takehide; Taoka, Noriyuki; Shimizu, Mitsuaki

    2018-01-23

    Despite the scientific and technological importance of removing interface dangling bonds, even an ideal model of a dangling-bond-free interface between GaN and an insulator has not been known. The formation of an atomically thin ordered buffer layer between crystalline GaN and amorphous SiO 2 would be a key to synthesize a dangling-bond-free GaN/SiO 2 interface. Here, we predict that a silicon oxynitride (Si 4 O 5 N 3 ) layer can epitaxially grow on a GaN(0001) surface without creating dangling bonds at the interface. Our ab initio calculations show that the GaN/Si 4 O 5 N 3 structure is more stable than silicon-oxide-terminated GaN(0001) surfaces. The electronic properties of the GaN/Si 4 O 5 N 3 structure can be tuned by modifying the chemical components near the interface. We also propose a possible approach to experimentally synthesize the GaN/Si 4 O 5 N 3 structure.

  3. Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

    NASA Technical Reports Server (NTRS)

    Del Alamo, Jesus A.; Swanson, Richard M.

    1987-01-01

    The relevant hole transport and recombination parameters in heavily doped n-type silicon under steady state are the hole diffusion length and the product of the hole diffusion coefficient times the hole equilibrium concentration. These parameters have measured in phosphorus-doped silicon grown by epitaxy throughout nearly two orders of magnitude of doping level. Both parameters are found to be strong functions of donor concentration. The equilibrium hole concentration can be deduced from the measurement. A rigid shrinkage of the forbidden gap appears as the dominant heavy doping mechanism in phosphorus-doped silicon.

  4. Development of a modular test system for the silicon sensor R&D of the ATLAS Upgrade

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, H.; Benoit, M.; Chen, H.

    High Voltage CMOS sensors are a promising technology for tracking detectors in collider experiments. Extensive R&D studies are being carried out by the ATLAS Collaboration for a possible use of HV-CMOS in the High Luminosity LHC upgrade of the Inner Tracker detector. CaRIBOu (Control and Readout Itk BOard) is a modular test system developed to test Silicon based detectors. It currently includes five custom designed boards, a Xilinx ZC706 development board, FELIX (Front-End LInk eXchange) PCIe card and a host computer. A software program has been developed in Python to control the CaRIBOu hardware. CaRIBOu has been used in themore » testbeam of the HV-CMOS sensor AMS180v4 at CERN. Preliminary results have shown that the test system is very versatile. In conclusion, further development is ongoing to adapt to different sensors, and to make it available to various lab test stands.« less

  5. Development of a modular test system for the silicon sensor R&D of the ATLAS Upgrade

    DOE PAGES

    Liu, H.; Benoit, M.; Chen, H.; ...

    2017-01-11

    High Voltage CMOS sensors are a promising technology for tracking detectors in collider experiments. Extensive R&D studies are being carried out by the ATLAS Collaboration for a possible use of HV-CMOS in the High Luminosity LHC upgrade of the Inner Tracker detector. CaRIBOu (Control and Readout Itk BOard) is a modular test system developed to test Silicon based detectors. It currently includes five custom designed boards, a Xilinx ZC706 development board, FELIX (Front-End LInk eXchange) PCIe card and a host computer. A software program has been developed in Python to control the CaRIBOu hardware. CaRIBOu has been used in themore » testbeam of the HV-CMOS sensor AMS180v4 at CERN. Preliminary results have shown that the test system is very versatile. In conclusion, further development is ongoing to adapt to different sensors, and to make it available to various lab test stands.« less

  6. Reflectance modeling of electrochemically P-type porosified silicon by Drude-Lorentz model

    NASA Astrophysics Data System (ADS)

    Kadi, M.; Media, E. M.; Gueddaoui, H.; Outemzabet, R.

    2014-09-01

    Porous silicon remains a promising material for optoelectronic application; in this field monitoring of the refractive index profile of the porous layer is required. We present in this work a procedure based on Drude-Lorentz model for calculating the optical parameters such as the high- and low-frequency dielectric constants, the plasma frequency by fitting the reflectance spectra. The experimental data of different porous silicon layer created above the bulk silicon material by electrochemical etching are extracted from reflectance measurements. The reflectance spectra are recorded in the spectral range 350-2500 nm. First, our computational procedure has been validated by its application on mono-crystalline silicon for the determination of its optical parameters. A good agreement between our results and those found in other works has been achieved in the visible-NIR range. In the second step, the model was applied to porous silicon (PS) layers. Useful optical parameters like the refractive index and the extinction coefficient, respectively, n (λ) and κ(λ), the band gap Eg, of different fabricated porous silicon layer are determined from simulated reflectance spectra. The correlation between the optical properties and the conditions of the electrochemical treatment was observed and analyzed. The main conclusion is that the reflected light from the porous silicon surface, although non-homogeneous and thus possessing the light scattering, is essentially smaller than the reflected light from the bulk crystalline silicon. These results show that the porous surface layer can act as an antireflection coating for silicon and could be used, in particular, in solar cells.

  7. X-ray metrology of an array of active edge pixel sensors for use at synchrotron light sources

    NASA Astrophysics Data System (ADS)

    Plackett, R.; Arndt, K.; Bortoletto, D.; Horswell, I.; Lockwood, G.; Shipsey, I.; Tartoni, N.; Williams, S.

    2018-01-01

    We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.

  8. Silicon bulk micromachined, symmetric, degenerate vibratorygyroscope, accelerometer and sensor and method for using the same

    NASA Technical Reports Server (NTRS)

    Tang, Tony K. (Inventor); Kaiser, William J. (Inventor); Bartman, Randall K. (Inventor); Wilcox, Jaroslava Z. (Inventor); Gutierrez, Roman C. (Inventor); Calvet, Robert J. (Inventor)

    1999-01-01

    When embodied in a microgyroscope, the invention is comprised of a silicon, four-leaf clover structure with a post attached to the center. The whole structure is suspended by four silicon cantilevers or springs. The device is electrostatically actuated and capacitively detects Coriolis induced motions of the leaves of the leaf clover structure. In the case where the post is not symmetric with the plane of the clover leaves, the device can is usable as an accelerometer. If the post is provided in the shape of a dumb bell or an asymmetric post, the center of gravity is moved out of the plane of clover leaf structure and a hybrid device is provided. When the clover leaf structure is used without a center mass, it performs as a high Q resonator usable as a sensor of any physical phenomena which can be coupled to the resonant performance.

  9. Analyzing the application of silicon-silver-2D nanomaterial-Al2O3 heterojunction in plasmonic sensor and its performance evaluation

    NASA Astrophysics Data System (ADS)

    Sharma, Anuj K.

    2018-03-01

    A semiconductor-metal-dielectric heterojunction system, generally useful in enhancing the efficiency of solar cells, is explored to design a high performance optical sensor based on surface plasmon resonance in near infrared (NIR). Silicon is considered as light coupling material and different 2D nanomaterials such as graphene, MoS2, and MoSe2 are explored to enhance the sensor's performance in terms of its figure of merit (FOM). An Al2O3 interlayer with a few nanometers of thickness is introduced, which acts as a critical component to significantly enhance the sensor's FOM. It is observed that an Al2O3 interlayer of around 9 nm thickness is able to many-fold upturn the sensor's FOM. As another important finding, silver layer thickness of around 60 nm is found to be highly useful to achieve high values of FOM. It is established through results that operating at longer NIR wavelength leads to greater FOM for any choice of 2D nanomaterial and any thickness of Al2O3 interlayer. Proposed sensor provides significantly greater FOM than previous works on SPR sensors.

  10. Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor.

    PubMed

    Ho, Hai Quan; Honda, Yuki; Motoyama, Mizuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

    2018-05-01

    The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a 'screw', an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40t/EFPY of 10Ωcm resistivity Si-particles for fabrication of the n-type spherical solar cell. Copyright © 2018 Elsevier Ltd. All rights reserved.

  11. Conformal self-assembled thin films for optical pH sensors

    NASA Astrophysics Data System (ADS)

    Topasna, Daniela M.; Topasna, Gregory A.; Liu, Minghanbo; Tseng, Ching-Hung

    2016-04-01

    Simple, reliable, lightweight, and inexpensive thin films based sensors are still in intense development and high demand in many applications such as biomedical, industrial, environmental, military, and consumer products. One important class of sensors is the optical pH sensor. In addition, conformal thin film based sensors extend the range of application for pH optical sensors. We present the results on the fabrication and characterization of optical pH sensing coatings made through ionic self-assembled technique. These thin films are based on the combination of a polyelectrolyte and water-soluble organic dye molecule Direct Yellow 4. A series of films was fabricated and characterized in order to determine the optimized parameters of the polymer and of the organic dye solutions. The optical pH responses of these films were also studied. The transparent films were immersed in solutions at various temperature and pH values. The films are stable when immersed in solutions with pH below 9.0 and temperatures below 90 °C and they maintain their performance after longer immersion times. We also demonstrate the functionality of these coatings as conformal films.

  12. Characterization of silicon heterojunctions for solar cells

    PubMed Central

    2011-01-01

    Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision. PMID:21711658

  13. High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Reddy, Pramod; Washiyama, Shun; Kaess, Felix

    2016-04-14

    In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that atmore » free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.« less

  14. Silicon carbide semiconductor technology for high temperature and radiation environments

    NASA Technical Reports Server (NTRS)

    Matus, Lawrence G.

    1993-01-01

    Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

  15. Integrated Microfluidic Gas Sensors for Water Monitoring

    NASA Technical Reports Server (NTRS)

    Zhu, L.; Sniadecki, N.; DeVoe, D. L.; Beamesderfer, M.; Semancik, S.; DeVoe, D. L.

    2003-01-01

    A silicon-based microhotplate tin oxide (SnO2) gas sensor integrated into a polymer-based microfluidic system for monitoring of contaminants in water systems is presented. This device is designed to sample a water source, control the sample vapor pressure within a microchannel using integrated resistive heaters, and direct the vapor past the integrated gas sensor for analysis. The sensor platform takes advantage of novel technology allowing direct integration of discrete silicon chips into a larger polymer microfluidic substrate, including seamless fluidic and electrical interconnects between the substrate and silicon chip.

  16. Design of an optical system for interrogation of implanted luminescent sensors and verification with silicone skin phantoms.

    PubMed

    Long, Ruiqi; McShane, Mike

    2012-09-01

    Implantable luminescent sensors are being developed for on-demand monitoring of blood glucose levels. For these sensors to be deployed in vivo, a matched external hardware system is needed. In this paper, we designed a compact, low-cost optical system with highly efficient photon delivery and collection using advanced optical modeling software. Compared to interrogation with a fiber bundle, the new system was predicted to improve interrogation efficiency by a factor of 200 for native sensors; an improvement of 37 times was predicted for sensors implanted at a depth of 1 mm in a skin-simulating phantom. A physical prototype was tested using silicone-based skin phantoms developed specifically to mimic the scattering and absorbing properties of human skin. The experimental evaluations revealed that the prototype device performed in agreement with expectations from simulation results, resulting in an overall improvement of over 2000 times. This efficient system enables use of a low-cost commercial spectrometer for recording sensor emission, which was not possible using only fiber optic delivery and collection, and will be used as a tool for in vivo studies with animal models or human subjects.

  17. High-Efficiency Thin-Film Silicon-on-GaP Solar Cell for Improved Radiation Resistance.

    DTIC Science & Technology

    1987-09-01

    UNCLASSIFIED MyUM 21 LIX E / 82H M D 132 11111_Lt5l1. t FILE UPI" AD-A190 268 AFWAL-TR-87-2070 HIGH-EFFICIENCY THIN- FILM SILICON-ON-GaP SOLAR CELL...EFFICIENCY THIN- FILM SILICON-ON-GaP SOLAR CELL FOR IMPROVED RADIATION RESISTANCE 12. PERSONAL AUTHOR(S) JEROME S. CULIK 13a. TYPE OF REPORT 13b. TIME...C tinue on reverse if necessary and identify by block number) 10 01 SILICONs THIN* FILM , . HETEROEPITAXIAL, RADIATION, 10 01 i GALLIUM PHOSPHIDE 19

  18. Compensated amorphous silicon solar cell

    DOEpatents

    Devaud, Genevieve

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  19. High-Sensitivity GaN Microchemical Sensors

    NASA Technical Reports Server (NTRS)

    Son, Kyung-ah; Yang, Baohua; Liao, Anna; Moon, Jeongsun; Prokopuk, Nicholas

    2009-01-01

    Systematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.

  20. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

    PubMed

    Zhang, Zi-Hui; Tan, Swee Tiam; Liu, Wei; Ju, Zhengang; Zheng, Ke; Kyaw, Zabu; Ji, Yun; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

    2013-02-25

    This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.

  1. Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

    1987-01-01

    The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

  2. Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

    1987-01-01

    The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

  3. Ratiometric detection of pH fluctuation in mitochondria with a new fluorescein/cyanine hybrid sensor.

    PubMed

    Chen, Yuncong; Zhu, Chengcheng; Cen, Jiajie; Bai, Yang; He, Weijiang; Guo, Zijian

    2015-05-01

    The homeostasis of mitochondrial pH (pH m ) is crucial in cell physiology. Developing small-molecular fluorescent sensors for the ratiometric detection of pH m fluctuation is highly demanded yet challenging. A ratiometric pH sensor, Mito-pH , was constructed by integrating a pH-sensitive FITC fluorophore with a pH-insensitive hemicyanine group. The hemicyanine group also acts as the mitochondria targeting group due to its lipophilic cationic nature. Besides its ability to target mitochondria, this sensor provides two ratiometric pH sensing modes, the dual excitation/dual emission mode (D ex /D em ) and dual excitation (D ex ) mode, and its linear and reversible ratiometric response range from pH 6.15 to 8.38 makes this sensor suitable for the practical tracking of pH m fluctuation in live cells. With this sensor, stimulated pH m fluctuation has been successfully tracked in a ratiometric manner via both fluorescence imaging and flow cytometry.

  4. Porous silicon carbide (SiC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1994-01-01

    A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

  5. Study of p-type and intrinsic materials for amorphous silicon based solar cells

    NASA Astrophysics Data System (ADS)

    Du, Wenhui

    This dissertation summarizes the research work on the investigation and optimization of high efficiency hydrogenated amorphous silicon (a-Si:H) based thin film n-i-p single-junction and multi-junction solar cells, deposited using radio frequency (RF) and very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD) techniques. The fabrication and characterization of high quality p-type and intrinsic materials for a-Si:H based solar cells have been systematically and intensively studied. Hydrogen dilution, substrate temperature, gas flow rate, RF- or VHF-power density, and films deposition time have been optimized to obtain "on-the-edge" materials. To understand the material structure of the silicon p-layer providing a high Voc a-Si:H solar cell, hydrogenated amorphous, protocrystalline, and nanocrystalline silicon p-layers have been prepared using RF-PECVD and characterized by Raman spectroscopy and high resolution transmission electronic microscopy (HRTEM). It was found that the optimum Si:H p-layer for n-i-p a-Si:H solar cells is composed of fine-grained nanocrystals with crystallite sizes in the range of 3-5 nm embedded in an amorphous network. Using the optimized p-layer, an a-Si:H single-junction solar cell with a very high Voc value of 1.042 V and a FF value of 0.74 has been obtained. a-Si:H, a-SiGe:H and nc-Si:H i-layers have been prepared using RF- and VHF-PECVD techniques and monitored by different optical and electrical characterizations. Single-junction a-Si:H, a-SiGe and nc-Si:H cells have been developed and optimized. Intermediate bandgap a-SiGe:H solar cells achieved efficiencies over 12.5%. On the basis of optimized component cells, we achieved a-Si:Hla-SiGe:H tandem solar cells with efficiencies of ˜12.9% and a-Si:H/a-SiGe:H/a-SiGe:H triple-junction cells with efficiencies of ˜12.03%. VHF-PECVD technique was used to increase the deposition rates of the narrow bandgap materials. The deposition rate for a-SiGe:H i-layer attained 9 A

  6. Deep-Sea DuraFET: A Pressure Tolerant pH Sensor Designed for Global Sensor Networks.

    PubMed

    Johnson, Kenneth S; Jannasch, Hans W; Coletti, Luke J; Elrod, Virginia A; Martz, Todd R; Takeshita, Yuichiro; Carlson, Robert J; Connery, James G

    2016-03-15

    Increasing atmospheric carbon dioxide is driving a long-term decrease in ocean pH which is superimposed on daily to seasonal variability. These changes impact ecosystem processes, and they serve as a record of ecosystem metabolism. However, the temporal variability in pH is observed at only a few locations in the ocean because a ship is required to support pH observations of sufficient precision and accuracy. This paper describes a pressure tolerant Ion Sensitive Field Effect Transistor pH sensor that is based on the Honeywell Durafet ISFET die. When combined with a AgCl pseudoreference sensor that is immersed directly in seawater, the system is capable of operating for years at a time on platforms that cycle from depths of several km to the surface. The paper also describes the calibration scheme developed to allow calibrated pH measurements to be derived from the activity of HCl reported by the sensor system over the range of ocean pressure and temperature. Deployments on vertical profiling platforms enable self-calibration in deep waters where pH values are stable. Measurements with the sensor indicate that it is capable of reporting pH with an accuracy of 0.01 or better on the total proton scale and a precision over multiyear periods of 0.005. This system enables a global ocean observing system for ocean pH.

  7. Identification of a molecular pH sensor in coral.

    PubMed

    Barott, Katie L; Barron, Megan E; Tresguerres, Martin

    2017-11-15

    Maintaining stable intracellular pH (pHi) is essential for homeostasis, and requires the ability to both sense pH changes that may result from internal and external sources, and to regulate downstream compensatory pH pathways. Here we identified the cAMP-producing enzyme soluble adenylyl cyclase (sAC) as the first molecular pH sensor in corals. sAC protein was detected throughout coral tissues, including those involved in symbiosis and calcification. Application of a sAC-specific inhibitor caused significant and reversible pHi acidosis in isolated coral cells under both dark and light conditions, indicating sAC is essential for sensing and regulating pHi perturbations caused by respiration and photosynthesis. Furthermore, pHi regulation during external acidification was also dependent on sAC activity. Thus, sAC is a sensor and regulator of pH disturbances from both metabolic and external origin in corals. Since sAC is present in all coral cell types, and the cAMP pathway can regulate virtually every aspect of cell physiology through post-translational modifications of proteins, sAC is likely to trigger multiple homeostatic mechanisms in response to pH disturbances. This is also the first evidence that sAC modulates pHi in any non-mammalian animal. Since corals are basal metazoans, our results indicate this function is evolutionarily conserved across animals. © 2017 The Author(s).

  8. Silicon nanowires: electron holography studies of doped p-n junctions and biased Schottky barriers.

    PubMed

    He, Kai; Cho, Jeong-Hyun; Jung, Yeonwoong; Picraux, S Tom; Cumings, John

    2013-03-22

    We report an in situ examination of individual Si p-n junction nanowires (NWs) using off-axis electron holography (EH) during transmission electron microscopy. The SiNWs were synthesized by chemical vapor deposition with an axial dopant profile from n- to p-type, and then placed inside the transmission electron microscope as a cantilever geometry in contact with a movable Pt probe for in situ biasing measurements during simultaneous EH observations. The phase shift from EH indicates the potential shift between the p- and n-segments to be 1.03 ± 0.17 V due to the built-in voltage. The I-V characteristics of a single SiNW indicate the formation of a Schottky barrier between the NW tip and the movable Pt contact. EH observations show a strong concentration of electric field at this contact, preventing a change in the Si energy bands in the p-n junction region due to the applied bias.

  9. Silicon carbide transparent chips for compact atomic sensors

    NASA Astrophysics Data System (ADS)

    Huet, L.; Ammar, M.; Morvan, E.; Sarazin, N.; Pocholle, J.-P.; Reichel, J.; Guerlin, C.; Schwartz, S.

    2017-11-01

    Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].

  10. High-Resolution Spin-on-Patterning of Perovskite Thin Films for a Multiplexed Image Sensor Array.

    PubMed

    Lee, Woongchan; Lee, Jongha; Yun, Huiwon; Kim, Joonsoo; Park, Jinhong; Choi, Changsoon; Kim, Dong Chan; Seo, Hyunseon; Lee, Hakyong; Yu, Ji Woong; Lee, Won Bo; Kim, Dae-Hyeong

    2017-10-01

    Inorganic-organic hybrid perovskite thin films have attracted significant attention as an alternative to silicon in photon-absorbing devices mainly because of their superb optoelectronic properties. However, high-definition patterning of perovskite thin films, which is important for fabrication of the image sensor array, is hardly accomplished owing to their extreme instability in general photolithographic solvents. Here, a novel patterning process for perovskite thin films is described: the high-resolution spin-on-patterning (SoP) process. This fast and facile process is compatible with a variety of spin-coated perovskite materials and perovskite deposition techniques. The SoP process is successfully applied to develop a high-performance, ultrathin, and deformable perovskite-on-silicon multiplexed image sensor array, paving the road toward next-generation image sensor arrays. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. GaN-based sensor nodes for in situ detection of gases

    NASA Technical Reports Server (NTRS)

    Son, Kyung-Ah (Inventor); Prokopuk, Nicholas (Inventor); Moon, Jeong-Sun (Inventor)

    2008-01-01

    A system for detecting chemical/biological substances and a detection method. The system comprises a plurality of sensing units or nodes and a radiofrequency link. Each unit has several sensors with different sensing curves. Each sensor is able to transmit information related to the sensed substance on a specific frequency. The sensors preferably comprise AlGaN/GaN high electron mobility transistors.

  12. Effects of varying oxygen partial pressure on molten silicon-ceramic substrate interactions

    NASA Technical Reports Server (NTRS)

    Ownby, D. P.; Barsoum, M. W.

    1980-01-01

    The silicon sessile drop contact angle was measured on hot pressed silicon nitride, silicon nitride coated on hot pressed silicon nitride, silicon carbon coated on graphite, and on Sialon to determine the degree to which silicon wets these substances. The post-sessile drop experiment samples were sectioned and photomicrographs were taken of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Of these materials, silicon did not form a true sessile drop on the SiC on graphite due to infiltration of the silicon through the SiC coating, nor on the Sialon due to the formation of a more-or-less rigid coating on the liquid silicon. The most wetting was obtained on the coated Si3N4 with a value of 42 deg. The oxygen concentrations in a silicon ribbon furnace and in a sessile drop furnace were measured using the protable thoria-yttria solid solution electrolyte oxygen sensor. Oxygen partial pressures of 10 to the minus 7 power atm and 10 to the minus 8 power atm were obtained at the two facilities. These measurements are believed to represent nonequilibrium conditions.

  13. Method for enhancing the solubility of dopants in silicon

    DOEpatents

    Sadigh, Babak; Lenosky, Thomas J.; De La Rubia, Tomas Diaz

    2003-09-30

    A method for enhancing the equilibrium solid solubility of dopants in silicon, germanium and silicon-germanium alloys. The method involves subjecting silicon-based substrate to biaxial or compression strain. It has been determined that boron solubility was largely enhanced (more than 100%) by a compressive bi-axial strain, based on a size-mismatch theory since the boron atoms are smaller than the silicon atoms. It has been found that the large enhancement or mixing properties of dopants in silicon and germanium substrates is primarily governed by their, and to second order by their size-mismatch with the substrate. Further, it has been determined that the dopant solubility enhancement with strain is most effective when the charge and the size-mismatch of the impurity favor the same type of strain. Thus, the solid solubility of small p-type (e.g., boron) as well as large n-type (e.g., arsenic) dopants can be raised most dramatically by appropriate bi-axial (compressive) strain, and that solubility of a large p-type dopant (e.g, indium) in silicon will be raised due to size-mismatch with silicon, which favors tensile strain, while its negative charge prefers compressive strain, and thus the two effects counteract each other.

  14. Silicon micro sensors as integrated readout platform for colorimetric and fluorescence based opto-chemical transducers

    NASA Astrophysics Data System (ADS)

    Will, Matthias; Martan, Tomas; Brodersen, Olaf

    2011-09-01

    Opto-chemical transducer almost offers unlimited possibilities for detection of physical quantities. New technologies and research show a steady increasing of publications in the area of sensoric principles. For transfer to real world applications the optical response has to be converted into an electrical signal. An exceptional opto chemical transducer loses the attraction if complex and expensive instruments for analysis are requires. Therefore, the readout system must be very compact and producible for low cost. In this presentation, the technology platform as a solution for these problems will be presented. We combine micro structuring of silicon, photodiode fabrication, chip in chip mounting and novel assembly technologies for creation of a flexible sensor platform. This flexible combination of technologies allows fabricating a family of planar optical remission sensors. With variation of design and modifications, we are able to detect colorimetric, fluorescent properties of an sensitive layer attached on the sensor surface. In our sensor with typical size of 6mm x 6mm x 1mm different emitting sources based on LED's or laser diodes, multiple detection cannels for the remitted light and also measurement of temperature are included. Based on these sensors we proof the concept by demonstrating sensors for oxygen, carbon dioxide and ammonia based on colorimetric and fluorescent changes in the transducer layer. In both configurations, LED's irradiated the sensitive polymer layer through a transparent substrate. The absorption or fluorescence properties of dyed polymer are changed by the chemical reaction and light response is detected by PIN diodes. The signal shift is analyzed by using a computer controlled evaluation board of own construction. Accuracy and reliability of the remission sensor system were verified and the whole sensor system was experimentally tested in the range of concentrations from 50 ppm up to 100 000 ppm for CO2 and O2 Furthermore, we develop

  15. Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector

    NASA Astrophysics Data System (ADS)

    Dalla Betta, G. F.; Tyzhnevyi, V.; Bosi, A.; Bonaiuti, M.; Angelini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Forti, F.; Giorgi, M. A.; Morsani, F.; Paoloni, E.; Rizzo, G.; Walsh, J.; Lusiani, A.; Ciolini, R.; Curzio, G.; D'Errico, F.; Del Gratta, A.; Bidinelli, L.; Rovati, L.; Saguatti, D.; Verzellesi, G.; Bosisio, L.; Rachevskaia, I.; Boscardin, M.; Giacomini, G.; Picciotto, A.; Piemonte, C.; Zorzi, N.; Calamosca, M.; Penzo, S.; Cardellini, F.

    2013-08-01

    A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the BJT internal amplification, real-time α particle detection is possible using simple readout electronics, which records the particle arrival time and charge. Functional tests at known Radon concentrations, demonstrated a sensitivity up to 4.9 cph/(100 Bq/m3) and a count rate of 0.05 cph at nominally-zero Radon concentration.

  16. N-type nano-silicon powders with ultra-low electrical resistivity as anode materials in lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Yue, Zhihao; Zhou, Lang; Jin, Chenxin; Xu, Guojun; Liu, Liekai; Tang, Hao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Yuan, Jiren

    2017-06-01

    N-type silicon wafers with electrical resistivity of 0.001 Ω cm were ball-milled to powders and part of them was further mechanically crushed by sand-milling to smaller particles of nano-size. Both the sand-milled and ball-milled silicon powders were, respectively, mixed with graphite powder (silicon:graphite = 5:95, weight ratio) as anode materials for lithium ion batteries. Electrochemical measurements, including cycle and rate tests, present that anode using sand-milled silicon powder performed much better. The first discharge capacity of sand-milled silicon anode is 549.7 mAh/g and it is still up to 420.4 mAh/g after 100 cycles. Besides, the D50 of sand-milled silicon powder shows ten times smaller in particle size than that of ball-milled silicon powder, and they are 276 nm and 2.6 μm, respectively. In addition, there exist some amorphous silicon components in the sand-milled silicon powder excepting the multi-crystalline silicon, which is very different from the ball-milled silicon powder made up of multi-crystalline silicon only.

  17. Atomic force microscope based on vertical silicon probes

    NASA Astrophysics Data System (ADS)

    Walter, Benjamin; Mairiaux, Estelle; Faucher, Marc

    2017-06-01

    A family of silicon micro-sensors for Atomic Force Microscope (AFM) is presented that allows to operate with integrated transducers from medium to high frequencies together with moderate stiffness constants. The sensors are based on Micro-Electro-Mechanical-Systems technology. The vertical design specifically enables a long tip to oscillate perpendicularly to the surface to be imaged. The tip is part of a resonator including quasi-flexural composite beams, and symmetrical transducers that can be used as piezoresistive detector and/or electro-thermal actuator. Two vertical probes (Vprobes) were operated up to 4.3 MHz with stiffness constants 150 N/m to 500 N/m and the capability to oscillate from 10 pm to 90 nm. AFM images of several samples both in amplitude modulation (tapping-mode) and in frequency modulation were obtained.

  18. Periodic silicon nanostructures for spectroscopic microsensors

    NASA Astrophysics Data System (ADS)

    Wehrspohn, Ralf B.; Gesemann, Benjamin; Pergande, Daniel; Geppert, Torsten M.; Schweizer, Stefan L.; Moretton, Susanne; Lambrecht, Armin

    2011-09-01

    Periodic silicon nanostructures can be used for different kinds of gas sensors depending on the analyte concentration. First we present an optical gas sensor based on the classical non-dispersive infrared technique for ppm-concentration using ultra-compact photonic crystal gas cells. It is conceptually based on low group velocities inside a photonic crystal gas cell and anti-reflection layers coupling light into the device. Experimentally, an enhancement of the CO2 infrared absorption by a factor of 2.6 to 3.5 as compared to an empty cell, due to slow light inside a 2D silicon photonic crystal gas cell, was observed; this is in excellent agreement with numerical simulations. In addition we report on silicon nanotip arrays, suitable for gas ionization in ion mobility microspectrometers (micro-IMS) having detection ranges in principle down to the ppt-range. Such instruments allow the detection of explosives, chemical warfare agents, and illicit drugs, e.g., at airports. We describe the fabrication process of large-scale-ordered nanotips with different tip shapes. Both silicon microstructures have been fabricated by photoelectrochemical etching of silicon.

  19. IgG1 adsorption to siliconized glass vials-influence of pH, ionic strength, and nonionic surfactants.

    PubMed

    Höger, Kerstin; Mathes, Johannes; Frieß, Wolfgang

    2015-01-01

    In this study, the adsorption of an IgG1 antibody to siliconized vials was investigated with focus on the formulation parameters pH, ionic strength, and nonionic surfactants. Electrophoretic mobility measurements were performed to investigate the charge characteristics of protein and siliconized glass particles at different pH values. Calculation of the electrokinetic charge density allowed further insight into the energetic conditions in the protein-sorbent interface. Maximum adsorption of IgG1 was found at acidic pH values and could be correlated with energetically favorable minimal ion incorporation into the interface. The importance of electrostatic interactions for IgG1 adsorption at acidic pH values was also confirmed by the efficient adsorption reduction at decreased solution ionic strength. A second adsorption maximum around the pI of the protein was assigned to hydrophobic interactions with the siliconized surface. Addition of the nonionic surfactants poloxamer 188 or polysorbate 80 resulted in almost complete suppression of adsorption at pH 7.2, and a strong but less efficient effect at pH 4 on siliconized glass vials. This adsorption suppression was much less pronounced on borosilicate glass vials. From these results, it can be concluded that electrostatic interactions contribute substantially to IgG1 adsorption to siliconized glass vials especially at acidic formulation pH. © 2014 Wiley Periodicals, Inc. and the American Pharmacists Association.

  20. Development of GaN-based micro chemical sensor nodes

    NASA Technical Reports Server (NTRS)

    Son, Kyung-ah; Prokopuk, Nicholas; George, Thomas; Moon, Jeong S.

    2005-01-01

    Sensors based on III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.

  1. Fabrication of wear-resistant silicon microprobe tips for high-speed surface roughness scanning devices

    NASA Astrophysics Data System (ADS)

    Wasisto, Hutomo Suryo; Yu, Feng; Doering, Lutz; Völlmeke, Stefan; Brand, Uwe; Bakin, Andrey; Waag, Andreas; Peiner, Erwin

    2015-05-01

    Silicon microprobe tips are fabricated and integrated with piezoresistive cantilever sensors for high-speed surface roughness scanning systems. The fabrication steps of the high-aspect-ratio silicon microprobe tips were started with photolithography and wet etching of potassium hydroxide (KOH) resulting in crystal-dependent micropyramids. Subsequently, thin conformal wear-resistant layer coating of aluminum oxide (Al2O3) was demonstrated on the backside of the piezoresistive cantilever free end using atomic layer deposition (ALD) method in a binary reaction sequence with a low thermal process and precursors of trimethyl aluminum and water. The deposited Al2O3 layer had a thickness of 14 nm. The captured atomic force microscopy (AFM) image exhibits a root mean square deviation of 0.65 nm confirming the deposited Al2O3 surface quality. Furthermore, vacuum-evaporated 30-nm/200-nm-thick Au/Cr layers were patterned by lift-off and served as an etch mask for Al2O3 wet etching and in ICP cryogenic dry etching. By using SF6/O2 plasma during inductively coupled plasma (ICP) cryogenic dry etching, micropillar tips were obtained. From the preliminary friction and wear data, the developed silicon cantilever sensor has been successfully used in 100 fast measurements of 5- mm-long standard artifact surface with a speed of 15 mm/s and forces of 60-100 μN. Moreover, the results yielded by the fabricated silicon cantilever sensor are in very good agreement with those of calibrated profilometer. These tactile sensors are targeted for use in high-aspect-ratio microform metrology.

  2. Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

    2018-03-01

    Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

  3. A Flexible Optical pH Sensor Based on Polysulfone Membranes Coated with pH-Responsive Polyaniline Nanofibers.

    PubMed

    Abu-Thabit, Nedal; Umar, Yunusa; Ratemi, Elaref; Ahmad, Ayman; Ahmad Abuilaiwi, Faraj

    2016-06-27

    A new optical pH sensor based on polysulfone (PSU) and polyaniline (PANI) was developed. A transparent and flexible PSU membrane was employed as a support. The electrically conductive and pH-responsive PANI was deposited onto the membrane surface by in situ chemical oxidative polymerization (COP). The absorption spectra of the PANI-coated PSU membranes exhibited sensitivity to pH changes in the range of 4-12, which allowed for designing a dual wavelength pH optical sensor. The performance of the membranes was assessed by measuring their response starting from high pH and going down to low pH, and vice versa. It was found that it is necessary to precondition the sensor layers before each measurement due to the slight hysteresis observed during forward and backward pH titrations. PSU membranes with polyaniline coating thicknesses in the range of ≈100-200 nm exhibited fast response times of <4 s, which are attributed to the porous, rough and nanofibrillar morphology of the polyaniline coating. The fabricated pH sensor was characterized by a sigmoidal response (R² = 0.997) which allows for pH determination over a wide dynamic range. All membranes were stable for a period of more than six months when stored in 1 M HCl solution. The reproducibility of the fabricated optical pH sensors was found to be <0.02 absorption units after one month storage in 1 M HCl solution. The performance of the optical pH sensor was tested and the obtained pH values were compared with the results obtained using a pH meter device.

  4. A Flexible Optical pH Sensor Based on Polysulfone Membranes Coated with pH-Responsive Polyaniline Nanofibers

    PubMed Central

    Abu-Thabit, Nedal; Umar, Yunusa; Ratemi, Elaref; Ahmad, Ayman; Ahmad Abuilaiwi, Faraj

    2016-01-01

    A new optical pH sensor based on polysulfone (PSU) and polyaniline (PANI) was developed. A transparent and flexible PSU membrane was employed as a support. The electrically conductive and pH-responsive PANI was deposited onto the membrane surface by in situ chemical oxidative polymerization (COP). The absorption spectra of the PANI-coated PSU membranes exhibited sensitivity to pH changes in the range of 4–12, which allowed for designing a dual wavelength pH optical sensor. The performance of the membranes was assessed by measuring their response starting from high pH and going down to low pH, and vice versa. It was found that it is necessary to precondition the sensor layers before each measurement due to the slight hysteresis observed during forward and backward pH titrations. PSU membranes with polyaniline coating thicknesses in the range of ≈100–200 nm exhibited fast response times of <4 s, which are attributed to the porous, rough and nanofibrillar morphology of the polyaniline coating. The fabricated pH sensor was characterized by a sigmoidal response (R2 = 0.997) which allows for pH determination over a wide dynamic range. All membranes were stable for a period of more than six months when stored in 1 M HCl solution. The reproducibility of the fabricated optical pH sensors was found to be <0.02 absorption units after one month storage in 1 M HCl solution. The performance of the optical pH sensor was tested and the obtained pH values were compared with the results obtained using a pH meter device. PMID:27355953

  5. Surface chemistry of a hydrogenated mesoporous p-type silicon

    NASA Astrophysics Data System (ADS)

    Media, El-Mahdi; Outemzabet, Ratiba

    2017-02-01

    The finality of this work is devoted to the grafting of organic molecules on hydrogen passivated mesoporous silicon surfaces. The study would aid in the development for the formation of organic monolayers on silicon surface to be exploited for different applications such as the realisation of biosensors and medical devices. The basic material is silicon which has been first investigated by FTIR at atomistic plane during the anodic forward and backward polarization (i.e. "go" and "return"). For this study, we applied a numerical program based on least squares method to infrared absorbance spectra obtained by an in situ attenuated total reflection on p-type silicon in diluted HF electrolyte. Our numerical treatment is based on the fitting of the different bands of IR absorbance into Gaussians corresponding to the different modes of vibration of molecular groups such as siloxanes and hydrides. An adjustment of these absorbance bands is done systematically. The areas under the fitted bands permit one to follow the intensity of the different modes of vibration that exist during the anodic forward and backward polarization in order to compare the reversibility of the phenomenon of the anodic dissolution of silicon. It permits also to follow the evolution between the hydrogen silicon termination at forward and backward scanning applied potential. Finally a comparison between the states of the initial and final surface was carried out. We confirm the presence of clearly four and three distinct vibration modes of siloxanes/hydroxide, SiOx, and hydrides, SiHx, respectively. The results show clearly that the adsorbed species found in the final stage after an electrochemical treatment consist of surface hydrogen and they show also that the surface morphology is different compared to the starting one, which is considered as reference. It is clear that the H-terminated of porous silicon surface is hydrophobic in nature. The hydrophobic character of this surface makes difficult

  6. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    PubMed

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-06

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  7. Driving force of stacking-fault formation in SiC p-i-n diodes.

    PubMed

    Ha, S; Skowronski, M; Sumakeris, J J; Paisley, M J; Das, M K

    2004-04-30

    The driving force of stacking-fault expansion in SiC p-i-n diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the driving force. A thermodynamic free energy difference between the perfect and a faulted structure is suggested as a plausible driving force in the tested diodes, indicating that hexagonal polytypes of silicon carbide are metastable at room temperature.

  8. A wireless pH sensor using magnetoelasticity for measurement of body fluid acidity.

    PubMed

    Pang, Pengfei; Gao, Xianjuan; Xiao, Xilin; Yang, Wenyue; Cai, Qingyun; Yao, Shouzhuo

    2007-04-01

    The determination of body fluid acidity using a wireless magnetoelastic pH-sensitive sensor is described. The sensor was fabricated by casting a layer of pH-sensitive polymer on a magnetoelastic ribbon. In response to an externally applied time-varying magnetic field, the magnetoelastic sensor mechanically vibrates at a characteristic frequency that is inversely dependent upon the mass of the pH polymer film, which varies as the film swells and shrinks in response to pH. As the magnetoelastic sensor is magnetostrictive, the mechanical vibrations of the sensor launch magnetic flux that can be detected remotely using a pickup coil. The sensor can be used for direct measurements of body fluid acidity without a pretreatment of the sample by using a filtration membrane. A reversible and linear response was obtained between pH 5.0 and 8.0 with a measurement resolution of pH 0.1 and a slope of 0.2 kHz pH(-1). Since there are no physical connections between the sensor and the instrument, the sensor can be applied to in vivo and in situ monitoring of the physiological pH and its fluctuations.

  9. Anti-reflective device having an anti-reflective surface formed of silicon spikes with nano-tips

    NASA Technical Reports Server (NTRS)

    Bae, Youngsam (Inventor); Manohara, Harish (Inventor); Mobasser, Sohrab (Inventor); Lee, Choonsup (Inventor)

    2011-01-01

    Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

  10. Anti- reflective device having an anti-reflection surface formed of silicon spikes with nano-tips

    NASA Technical Reports Server (NTRS)

    Bae, Youngsman (Inventor); Mooasser, Sohrab (Inventor); Manohara, Harish (Inventor); Lee, Choonsup (Inventor); Bae, Kungsam (Inventor)

    2009-01-01

    Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

  11. Micromachined pressure sensors: Review and recent developments

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Eaton, W.P.; Smith, J.H.

    1997-03-01

    Since the discovery of piezoresistivity in silicon in the mid 1950s, silicon-based pressure sensors have been widely produced. Micromachining technology has greatly benefited from the success of the integrated circuits industry, burrowing materials, processes, and toolsets. Because of this, microelectromechanical systems (MEMS) are now poised to capture large segments of existing sensor markets and to catalyze the development of new markets. Given the emerging importance of MEMS, it is instructive to review the history of micromachined pressure sensors, and to examine new developments in the field. Pressure sensors will be the focus of this paper, starting from metal diaphragm sensorsmore » with bonded silicon strain gauges, and moving to present developments of surface-micromachined, optical, resonant, and smart pressure sensors. Considerations for diaphragm design will be discussed in detail, as well as additional considerations for capacitive and piezoresistive devices.« less

  12. Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

    NASA Astrophysics Data System (ADS)

    Rahmouni, M.; Datta, A.; Chatterjee, P.; Damon-Lacoste, J.; Ballif, C.; Roca i Cabarrocas, P.

    2010-03-01

    Heterojunction with intrinsic thin layer or "HIT" solar cells are considered favorable for large-scale manufacturing of solar modules, as they combine the high efficiency of crystalline silicon (c-Si) solar cells, with the low cost of amorphous silicon technology. In this article, based on experimental data published by Sanyo, we simulate the performance of a series of HIT cells on N-type crystalline silicon substrates with hydrogenated amorphous silicon (a-Si:H) emitter layers, to gain insight into carrier transport and the general functioning of these devices. Both single and double HIT structures are modeled, beginning with the initial Sanyo cells having low open circuit voltages but high fill factors, right up to double HIT cells exhibiting record values for both parameters. The one-dimensional numerical modeling program "Amorphous Semiconductor Device Modeling Program" has been used for this purpose. We show that the simulations can correctly reproduce the electrical characteristics and temperature dependence for a set of devices with varying I-layer thickness. Under standard AM1.5 illumination, we show that the transport is dominated by the diffusion mechanism, similar to conventional P/N homojunction solar cells, and tunneling is not required to describe the performance of state-of-the art devices. Also modeling has been used to study the sensitivity of N-c-Si HIT solar cell performance to various parameters. We find that the solar cell output is particularly sensitive to the defect states on the surface of the c-Si wafer facing the emitter, to the indium tin oxide/P-a-Si:H front contact barrier height and to the band gap and activation energy of the P-a-Si:H emitter, while the I-a-Si:H layer is necessary to achieve both high Voc and fill factor, as it passivates the defects on the surface of the c-Si wafer. Finally, we describe in detail for most parameters how they affect current transport and cell properties.

  13. New fluorescent pH sensors based on covalently linkable PET rhodamines

    PubMed Central

    Aigner, Daniel; Borisov, Sergey M.; Orriach Fernández, Francisco J.; Fernández Sánchez, Jorge F.; Saf, Robert; Klimant, Ingo

    2012-01-01

    A new class of rhodamines for the application as indicator dyes in fluorescent pH sensors is presented. Their pH-sensitivity derives from photoinduced electron transfer between non-protonated amino groups and the excited chromophore which results in effective fluorescence quenching at increasing pH. The new indicator class carries a pentafluorophenyl group at the 9-position of the xanthene core where other rhodamines bear 2-carboxyphenyl substituents instead. The pentafluorophenyl group is used for covalent coupling to sensor matrices by “click” reaction with mercapto groups. Photophysical properties are similar to “classical” rhodamines carrying 2′-carboxy groups. pH sensors have been prepared with two different matrix materials, silica gel and poly(2-hydroxyethylmethacrylate). Both sensors show high luminescence brightness (absolute fluorescence quantum yield ΦF≈0.6) and high pH-sensitivity at pH 5–7 which makes them suitable for monitoring biotechnological samples. To underline practical applicability, a dually lifetime referenced sensor containing Cr(III)-doped Al2O3 as reference material is presented. PMID:22967541

  14. UV absorption and photoisomerization of p-methoxycinnamate grafted silicone.

    PubMed

    Pattanaargson, Supason; Hongchinnagorn, Nantawan; Hirunsupachot, Piyawan; Sritana-anant, Yongsak

    2004-01-01

    p-Methoxycinnamate moieties, UV-B-absorptive chromophores of the widely used UV-B filter, 2-ethylhexyl p-methoxycinnamate (OMC), were grafted onto the 7 mol% amino functionalized silicone polymer through amide linkages. Comparing with OMC, the resulting poly [3-(p-methoxycinnamido)(propyl)(methyl)-dimethyl] siloxane copolymer (CAS) showed less E to Z isomerization when exposed to UV-B light. The absorption profiles of the product showed the maximum absorption wavelength to be similar to that of OMC but with less sensitivity to the type of solvent. Poly (methylhydrosiloxane) grafted with 10 mol% p-methoxycinnamoyl moieties was prepared through hydrosilylations of 2-propenyl-p-methoxycinnamate, in which the resulting copolymer showed similar results to those of CAS.

  15. Predicting success with silicone-hydrogel contact lenses in new wearers.

    PubMed

    Best, Nigel; Drury, Laura; Wolffsohn, James S

    2013-10-01

    to evaluate changes in tear metrics and ocular signs induced by six months of silicone-hydrogel contact lens wear and the difference in baseline characteristics between those who successfully continued in contact lens wear compared to those that did not. Non-invasive Keratograph, Tearscope and fluorescein tear break-up times (TBUTs), tear meniscus height, bulbar and limbal hyperaemia, lid-parallel conjunctival folds (LIPCOF), phenol red thread, fluorescein and lissamine-green staining, and lid wiper epitheliopathy were measured on 60 new contact lens wearers fitted with monthly silicone-hydrogels (average age 36±14 years, 40 females). Symptoms were evaluated by the Ocular Surface Disease Index (OSDI). After six months full time contact lens wear the above metrics were re-measured on those patients still in contact lens wear (n=33). The initial measurements were also compared between the group still wearing lenses after six months and those who had ceased lens wear (n=27). There were significant changes in tear meniscus height (p=0.031), bulbar hyperaemia (p=0.011), fluorescein TBUT (p=0.027), corneal (p=0.007) and conjunctival (p=0.009) staining, LIPCOF (p=0.011) and lid wiper epitheliopathy (p=0.002) after six months of silicone-hydrogel wear. Successful wearers had a higher non-invasive (17.0±8.2s vs 12.0±5.6s; p=0.001) and fluorescein (10.7±6.4s vs 7.5±4.7s; p=0.001) TBUT than drop-outs, although OSDI (cut-off 4.2) was also a strong predictor of success. Silicone-hydrogel lenses induced significant changes in the tear film and ocular surface as well as lid margin staining. Wettability of the ocular surface is the main factor affecting contact lens drop-out. Copyright © 2013 British Contact Lens Association. Published by Elsevier Ltd. All rights reserved.

  16. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

    PubMed

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-04-07

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  17. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD

    NASA Astrophysics Data System (ADS)

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-03-01

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 107 cm-2. The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  18. Nano porous silicon microcavity sensor for determination organic solvents and pesticide in water

    NASA Astrophysics Data System (ADS)

    Pham, Van Hoi; Van Nguyen, Thuy; Nguyen, The Anh; Pham, Van Dai; Bui, Huy

    2014-12-01

    In this paper we present a sensing method using nano-porous silicon microcavity sensor, which was developed in order to obtain simultaneous determination of two volatile substances with different solvent concentrations as well as very low pesticide concentration in water. The temperature of the solution and the velocity of the air stream flowing through the solution have been used to control the response of the sensor for different solvent solutions. We study the dependence of the cavity-resonant wavelength shift on solvent concentration, velocity of the airflow and solution temperature. The wavelength shift depends linearly on concentration and increases with solution temperature and velocity of the airflow. The dependence of the wavelength shift on the solution temperature in the measurement contains properties of the temperature dependence of the solvent vapor pressure, which characterizes each solvent. As a result, the dependence of the wavelength shift on the solution temperature discriminates between solutions of ethanol and acetone with different concentrations. This suggests a possibility for the simultaneous determination of the volatile substances and their concentrations. On the other hand, this method is able to detect the presence of atrazine pesticide by the shift of the resonant wavelength, with good sensitivity (0.3 nm pg-1 ml) and limit of detection (LOD) (0.8-1.4 pg ml-1), that we tested for concentrations in the range from 2.15 to 21.5 pg ml-1, which is the range useful for monitoring acceptable water for human consumption.

  19. Research Progress on F-P Interference—Based Fiber-Optic Sensors

    PubMed Central

    Huang, Yi Wen; Tao, Jin; Huang, Xu Guang

    2016-01-01

    We review our works on Fabry-Perot (F-P) interferometric fiber-optic sensors with various applications. We give a general model of F-P interferometric optical fiber sensors including diffraction loss caused by the beam divergence and the Gouy phase shift. Based on different structures of an F-P cavity formed on the end of a single-mode fiber, the F-P interferometric optical sensor has been extended to measurements of the refractive index (RI) of liquids and solids, temperature as well as small displacement. The RI of liquids and solids can be obtained by monitoring the fringe contrast related to Fresnel reflections, while the ambient temperature and small displacement can be obtained by monitoring the wavelength shift of the interference fringes. The F-P interferometric fiber-optic sensors can be used for many scientific and technological applications. PMID:27598173

  20. Optical detection system for MEMS-type pressure sensor

    NASA Astrophysics Data System (ADS)

    Sareło, K.; Górecka-Drzazga, A.; Dziuban, J. A.

    2015-07-01

    In this paper a special optical detection system designed for a MEMS-type (micro-electro-mechanical system) silicon pressure sensor is presented. The main part of the optical system—a detection unit with a perforated membrane—is bonded to the silicon sensor, and placed in a measuring system. An external light source illuminates the membrane of the pressure sensor. Owing to the light reflected from the deflected membrane sensor, the optical pattern consisting of light points is visible, and pressure can be estimated. The optical detection unit (20   ×   20   ×   20.4 mm3) is fabricated using microengineering techniques. Its dimensions are adjusted to the dimensions of the pressure sensor (5   ×   5 mm2 silicon membrane). Preliminary tests of the optical detection unit integrated with the silicon pressure sensor are carried out. For the membrane sensor from 15 to 60 µm thick, a repeatable detection of the differential pressure in the range of 0 to 280 kPa is achieved. The presented optical microsystem is especially suitable for the pressure measurements in a high radiation environment.

  1. Tiny surface plasmon resonance sensor integrated on silicon waveguide based on vertical coupling into finite metal-insulator-metal plasmonic waveguide.

    PubMed

    Lee, Dong-Jin; Yim, Hae-Dong; Lee, Seung-Gol; O, Beom-Hoan

    2011-10-10

    We propose a tiny surface plasmon resonance (SPR) sensor integrated on a silicon waveguide based on vertical coupling into a finite thickness metal-insulator-metal (f-MIM) plasmonic waveguide structure acting as a Fabry-Perot resonator. The resonant characteristics of vertically coupled f-MIM plasmonic waveguides are theoretically investigated and optimized. Numerical results show that the SPR sensor with a footprint of ~0.0375 μm2 and a sensitivity of ~635 nm/RIU can be designed at a 1.55 μm transmission wavelength.

  2. Miniaturized pH Sensors Based on Zinc Oxide Nanotubes/Nanorods

    PubMed Central

    Fulati, Alimujiang; Ali, Syed M.Usman; Riaz, Muhammad; Amin, Gul; Nur, Omer; Willander, Magnus

    2009-01-01

    ZnO nanotubes and nanorods grown on gold thin film were used to create pH sensor devices. The developed ZnO nanotube and nanorod pH sensors display good reproducibility, repeatability and long-term stability and exhibit a pH-dependent electrochemical potential difference versus an Ag/AgCl reference electrode over a large dynamic pH range. We found the ZnO nanotubes provide sensitivity as high as twice that of the ZnO nanorods, which can be ascribed to the fact that small dimensional ZnO nanotubes have a higher level of surface and subsurface oxygen vacancies and provide a larger effective surface area with higher surface-to-volume ratio as compared to ZnO nanorods, thus affording the ZnO nanotube pH sensor a higher sensitivity. Experimental results indicate ZnO nanotubes can be used in pH sensor applications with improved performance. Moreover, the ZnO nanotube arrays may find potential application as a novel material for measurements of intracellular biochemical species within single living cells. PMID:22291545

  3. Process research of non-CZ silicon material

    NASA Technical Reports Server (NTRS)

    Campbell, R. B.

    1984-01-01

    Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

  4. Silicon micromachined vibrating gyroscopes

    NASA Astrophysics Data System (ADS)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  5. Enhanced Performance of Gate-First p-Channel Metal-Insulator-Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method

    NASA Astrophysics Data System (ADS)

    Kitano, Naomu; Horie, Shinya; Arimura, Hiroaki; Kawahara, Takaaki; Sakashita, Shinsuke; Nishida, Yukio; Yugami, Jiro; Minami, Takashi; Kosuda, Motomu; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2007-12-01

    We demonstrated the use of an in situ metal/high-k fabrication method for improving the performance of metal-insulator-semiconductor field-effect transistors (MISFETs). Gate-first pMISFETs with polycrystalline silicon (poly-Si)/TiN/HfSiON stacks were fabricated by techniques based on low-damage physical vapor deposition, in which high-quality HfSiON dielectrics were formed by the interface reaction between an ultrathin metal-Hf layer (0.5 nm thick) and a SiO2 underlayer, and TiN electrodes were continuously deposited on the gate dielectrics without exposure to air. Gate-first pMISFETs with high carrier mobility and a low threshold voltage (Vth) were realized by reducing the carbon impurity in the gate stacks and improving the Vth stability against thermal treatment. As a result, we obtained superior current drivability (Ion = 350 μA/μm at Ioff = 200 pA/μm), which corresponds to a 13% improvement over that of conventional chemical vapor deposition-based metal/high-k devices.

  6. Using membrane composition to fine-tune the pKa of an optical liposome pH sensor.

    PubMed

    Clear, Kasey J; Virga, Katelyn; Gray, Lawrence; Smith, Bradley D

    2016-04-14

    Liposomes containing membrane-anchored pH-sensitive optical probes are valuable sensors for monitoring pH in various biomedical samples. The dynamic range of the sensor is maximized when the probe p K a is close to the expected sample pH. While some biomedical samples are close to neutral pH there are several circumstances where the pH is 1 or 2 units lower. Thus, there is a need to fine-tune the probe p K a in a predictable way. This investigation examined two lipid-conjugated optical probes, each with appended deep-red cyanine dyes containing indoline nitrogen atoms that are protonated in acid. The presence of anionic phospholipids in the liposomes stabilized the protonated probes and increased the probe p K a values by < 1 unit. The results show that rational modification of the membrane composition is a general non-covalent way to fine-tune the p K a of an optical liposome sensor for optimal pH sensing performance.

  7. High-temperature microelectromechanical pressure sensors based on a SOI heterostructure for an electronic automatic aircraft engine control system

    NASA Astrophysics Data System (ADS)

    Sokolov, Leonid V.

    2010-08-01

    There is a need of measuring distributed pressure on the aircraft engine inlet with high precision within a wide operating temperature range in the severe environment to improve the efficiency of aircraft engine control. The basic solutions and principles of designing high-temperature (to 523K) microelectromechanical pressure sensors based on a membrane-type SOI heterostructure with a monolithic integral tensoframe (MEMS-SOIMT) are proposed in accordance with the developed concept, which excludes the use of electric p-n junctions in semiconductor microelectromechanical sensors. The MEMS-SOIMT technology relies on the group processes of microelectronics and micromechanics for high-precision microprofiling of a three-dimension micromechanical structure, which exclude high-temperature silicon doping processes.

  8. High performance flexible pH sensor based on polyaniline nanopillar array electrode.

    PubMed

    Yoon, Jo Hee; Hong, Seok Bok; Yun, Seok-Oh; Lee, Seok Jae; Lee, Tae Jae; Lee, Kyoung G; Choi, Bong Gill

    2017-03-15

    Flexible pH sensor technologies have attracted a great deal of attention in many applications, such as, wearable health care devices and monitors for chemical and biological processes. Here, we fabricated flexible and thin pH sensors using a two electrode configuration comprised of a polyaniline nanopillar (PAN) array working electrode and an Ag/AgCl reference electrode. In order to provide nanostructure, soft lithography using a polymeric blend was employed to create a flexible nanopillar backbone film. Polyaniline-sensing materials were deposited on a patterned-nanopillar array by electrochemical deposition. The pH sensors produced exhibited a near-Nernstian response (∼60.3mV/pH), which was maintained in a bent state. In addition, pH sensors showed other excellent sensor performances in terms of response time, reversibility, repeatability, selectivity, and stability. Copyright © 2016 Elsevier Inc. All rights reserved.

  9. Solid-Liquid Interdiffusion Bonding of Silicon Carbide to Steel for High Temperature MEMS Sensor Packaging and Bonding

    NASA Astrophysics Data System (ADS)

    Chan, Matthew Wei-Jen

    Complex engineering systems ranging from automobile engines to geothermal wells require specialized sensors to monitor conditions such as pressure, acceleration and temperature in order to improve efficiency and monitor component lifetime in what may be high temperature, corrosive, harsh environments. Microelectromechanical systems (MEMS) have demonstrated their ability to precisely and accurately take measurements under such conditions. The systems being monitored are typically made from metals, such as steel, while the MEMS sensors used for monitoring are commonly fabricated from silicon, silicon carbide and aluminum nitride, and so there is a sizable thermal expansion mismatch between the two. For these engineering applications the direct bonding of MEMS sensors to the components being monitored is often required. This introduces several challenges, namely the development of a bond that is capable of surviving high temperature harsh environments while mitigating the thermally induced strains produced during bonding. This project investigates the development of a robust packaging and bonding process, using the gold-tin metal system and the solid-liquid interdiffusion (SLID) bonding process, to join silicon carbide substrates directly to type-316 stainless steel. The SLID process enables bonding at lower temperatures while producing a bond capable of surviving higher temperatures. Finite element analysis was performed to model the thermally induced strains generated in the bond and to understand the optimal way to design the bond. The cross-sectional composition of the bonds has been analyzed and the bond strength has been investigated using die shear testing. The effects of high temperature aging on the bond's strength and the metallurgy of the bond were studied. Additionally, loading of the bond was performed at temperatures over 415 °C, more than 100 °C, above the temperature used for bonding, with full survival of the bond, thus demonstrating the benefit of

  10. A graphene oxide pH sensor for wound monitoring.

    PubMed

    Melai, B; Salvo, P; Calisi, N; Moni, L; Bonini, A; Paoletti, C; Lomonaco, T; Mollica, V; Fuoco, R; Di Francesco, F

    2016-08-01

    This article describes the fabrication and characterization of a pH sensor for monitoring the wound status. The pH sensitive layer consists of a graphene oxide (GO) layer obtained by drop-casting 5 μΐ of GO dispersion onto the working electrode of a screen-printed substrate. Sensitivity was 31.8 mV/pH with an accuracy of 0.3 unit of pH. Open-circuit potentiometry was carried out to measure pH in an exudate sample. The GO pH sensor proved to be reliable as the comparison with results obtained from a standard glass electrode pH-meter showed negligible differences (<; 0.09 pH units in the worst case) for measurements performed over a period of 4 days.

  11. Microelectromechanical system pressure sensor integrated onto optical fiber by anodic bonding.

    PubMed

    Saran, Anish; Abeysinghe, Don C; Boyd, Joseph T

    2006-03-10

    Optical microelectromechanical system pressure sensors based on the principle of Fabry-Perot interferometry have been developed and fabricated using the technique of silicon-to-silicon anodic bonding. The pressure sensor is then integrated onto an optical fiber by a novel technique of anodic bonding without use of any adhesives. In this anodic bonding technique we use ultrathin silicon of thickness 10 microm to bond the optical fiber to the sensor head. The ultrathin silicon plays the role of a stress-reducing layer, which helps the bonding of an optical fiber to silicon having conventional wafer thickness. The pressure-sensing membrane is formed by 8 microm thick ultrathin silicon acting as a membrane, thus eliminating the need for bulk silicon etching. The pressure sensor integrated onto an optical fiber is tested for static response, and experimental results indicate degradation in the fringe visibility of the Fabry-Perot interferometer. This effect was mainly due to divergent light rays from the fiber degrading the fringe visibility. This effect is demonstrated in brief by an analytical model.

  12. Improving performance of Si/CdS micro-/nanoribbon p-n heterojunction light emitting diodes by trenched structure

    NASA Astrophysics Data System (ADS)

    Huang, Shiyuan; Wu, Yuanpeng; Ma, Xiangyang; Yang, Zongyin; Liu, Xu; Yang, Qing

    2018-05-01

    Realizing high performance silicon based light sources has been an unremitting pursuit for researchers. In this letter, we propose a simple structure to enhance electroluminescence emission and reduce the threshold of injected current of silicon/CdS micro-/nanoribbon p-n heterojunction visible light emitting diodes, by fabricating trenched structure on silicon substrate to mount CdS micro-/nanoribbon. A series of experiments and simulation analysis favors the rationality and validity of our mounting design. After mounting the CdS micro-/nanoribbon, the optical field confinement increases, and absorption and losses from high refractive silicon substrate are effectively reduced. Meanwhile the sharp change of silicon substrate near heterojunction also facilitates the balance between electron current and hole current, which substantially conduces to the stable amplification of electroluminescence emission in CdS micro-/nanoribbon.

  13. Genetically encoded proton sensors reveal activity-dependent pH changes in neurons.

    PubMed

    Raimondo, Joseph V; Irkle, Agnese; Wefelmeyer, Winnie; Newey, Sarah E; Akerman, Colin J

    2012-01-01

    The regulation of hydrogen ion concentration (pH) is fundamental to cell viability, metabolism, and enzymatic function. Within the nervous system, the control of pH is also involved in diverse and dynamic processes including development, synaptic transmission, and the control of network excitability. As pH affects neuronal activity, and can also itself be altered by neuronal activity, the existence of tools to accurately measure hydrogen ion fluctuations is important for understanding the role pH plays under physiological and pathological conditions. Outside of their use as a marker of synaptic release, genetically encoded pH sensors have not been utilized to study hydrogen ion fluxes associated with network activity. By combining whole-cell patch clamp with simultaneous two-photon or confocal imaging, we quantified the amplitude and time course of neuronal, intracellular, acidic transients evoked by epileptiform activity in two separate in vitro models of temporal lobe epilepsy. In doing so, we demonstrate the suitability of three genetically encoded pH sensors: deGFP4, E(2)GFP, and Cl-sensor for investigating activity-dependent pH changes at the level of single neurons.

  14. Evaluation of a Prototype pCO2 Optical Sensor

    NASA Astrophysics Data System (ADS)

    Sanborn-Marsh, C.; Sutton, A.; Sabine, C. L.; Lawrence-Salvas, N.; Dietrich, C.

    2016-12-01

    Anthropogenic greenhouse gas emissions continue to rise, driving climate change and altering the ocean carbonate systems. Carbonate chemistry can be characterized by any two of the four parameters: pH, total alkalinity, dissolved inorganic carbon, and partial pressure of dissolved carbon dioxide gas (pCO2). To fully monitor these dynamic systems, researchers must deploy a more temporally and spatially comprehensive sensor network. Logistical challenges, such as the energy consumption, size, lifetime, depth range, and cost of pCO2 sensors have limited the network's reach so far. NOAA's Pacific Marine Environmental Laboratory has conducted assessment tests of a pCO2 optical sensor (optode), recently developed by Atamanchuk et al (2014). We hope to deploy this optode in the summer of 2017 on high-resolution moored profiler, along with temperature, salinity, and oxygen sensors. While most pCO2 optodes have energy consumptions of 3-10 W, this 36mm-diameter by 86mm-long instrument consumes a mere 7-80 mW. Initial testing showed that its accuracy varied within an absolute range of 2-75 μatm, depending on environmental conditions, including temperature, salinity, response time, and initial calibration. Further research independently examining the effects of each variable on the accuracy of the data will also be presented.

  15. Novel Gas Sensor Arrays Based on High-Q SAM-Modified Piezotransduced Single-Crystal Silicon Bulk Acoustic Resonators

    PubMed Central

    Zhao, Yuan; Yang, Qingrui; Chang, Ye; Pang, Wei; Zhang, Hao; Duan, Xuexin

    2017-01-01

    This paper demonstrates a novel micro-size (120 μm × 200 μm) piezoelectric gas sensor based on a piezotransduced single-crystal silicon bulk acoustic resonator (PSBAR). The PSBARs operate at 102 MHz and possess high Q values (about 2000), ensuring the stability of the measurement. A corresponding gas sensor array is fabricated by integrating three different self-assembled monolayers (SAMs) modified PSBARs. The limit of detection (LOD) for ethanol vapor is demonstrated to be as low as 25 ppm with a sensitivity of about 1.5 Hz/ppm. Two sets of identification code bars based on the sensitivities and the adsorption energy constants are utilized to successfully discriminate isopropanol (IPA), ethanol, hexane and heptane vapors at low and high gas partial pressures, respectively. The proposed sensor array shows the potential to form a portable electronic nose system for volatile organic compound (VOC) differentiation. PMID:28672852

  16. Novel Gas Sensor Arrays Based on High-Q SAM-Modified Piezotransduced Single-Crystal Silicon Bulk Acoustic Resonators.

    PubMed

    Zhao, Yuan; Yang, Qingrui; Chang, Ye; Pang, Wei; Zhang, Hao; Duan, Xuexin

    2017-06-26

    This paper demonstrates a novel micro-size (120 μm × 200 μm) piezoelectric gas sensor based on a piezotransduced single-crystal silicon bulk acoustic resonator (PSBAR). The PSBARs operate at 102 MHz and possess high Q values (about 2000), ensuring the stability of the measurement. A corresponding gas sensor array is fabricated by integrating three different self-assembled monolayers (SAMs) modified PSBARs. The limit of detection (LOD) for ethanol vapor is demonstrated to be as low as 25 ppm with a sensitivity of about 1.5 Hz/ppm. Two sets of identification code bars based on the sensitivities and the adsorption energy constants are utilized to successfully discriminate isopropanol (IPA), ethanol, hexane and heptane vapors at low and high gas partial pressures, respectively. The proposed sensor array shows the potential to form a portable electronic nose system for volatile organic compound (VOC) differentiation.

  17. pHlash: a new genetically encoded and ratiometric luminescence sensor of intracellular pH.

    PubMed

    Zhang, Yunfei; Xie, Qiguang; Robertson, J Brian; Johnson, Carl Hirschie

    2012-01-01

    We report the development of a genetically encodable and ratiometic pH probe named "pHlash" that utilizes Bioluminescence Resonance Energy Transfer (BRET) rather than fluorescence excitation. The pHlash sensor-composed of a donor luciferase that is genetically fused to a Venus fluorophore-exhibits pH dependence of its spectral emission in vitro. When expressed in either yeast or mammalian cells, pHlash reports basal pH and cytosolic acidification in vivo. Its spectral ratio response is H(+) specific; neither Ca(++), Mg(++), Na(+), nor K(+) changes the spectral form of its luminescence emission. Moreover, it can be used to image pH in single cells. This is the first BRET-based sensor of H(+) ions, and it should allow the approximation of pH in cytosolic and organellar compartments in applications where current pH probes are inadequate.

  18. Dual-Mode Gas Sensor Composed of a Silicon Nanoribbon Field Effect Transistor and a Bulk Acoustic Wave Resonator: A Case Study in Freons

    PubMed Central

    Chang, Ye; Hui, Zhipeng; Wang, Xiayu; Qu, Hemi; Pang, Wei

    2018-01-01

    In this paper, we develop a novel dual-mode gas sensor system which comprises a silicon nanoribbon field effect transistor (Si-NR FET) and a film bulk acoustic resonator (FBAR). We investigate their sensing characteristics using polar and nonpolar organic compounds, and demonstrate that polarity has a significant effect on the response of the Si-NR FET sensor, and only a minor effect on the FBAR sensor. In this dual-mode system, qualitative discrimination can be achieved by analyzing polarity with the Si-NR FET and quantitative concentration information can be obtained using a polymer-coated FBAR with a detection limit at the ppm level. The complementary performance of the sensing elements provides higher analytical efficiency. Additionally, a dual mixture of two types of freons (CFC-113 and HCFC-141b) is further analyzed with the dual-mode gas sensor. Owing to the small size and complementary metal-oxide semiconductor (CMOS)-compatibility of the system, the dual-mode gas sensor shows potential as a portable integrated sensing system for the analysis of gas mixtures in the future. PMID:29370109

  19. Dual-Mode Gas Sensor Composed of a Silicon Nanoribbon Field Effect Transistor and a Bulk Acoustic Wave Resonator: A Case Study in Freons.

    PubMed

    Chang, Ye; Hui, Zhipeng; Wang, Xiayu; Qu, Hemi; Pang, Wei; Duan, Xuexin

    2018-01-25

    In this paper, we develop a novel dual-mode gas sensor system which comprises a silicon nanoribbon field effect transistor (Si-NR FET) and a film bulk acoustic resonator (FBAR). We investigate their sensing characteristics using polar and nonpolar organic compounds, and demonstrate that polarity has a significant effect on the response of the Si-NR FET sensor, and only a minor effect on the FBAR sensor. In this dual-mode system, qualitative discrimination can be achieved by analyzing polarity with the Si-NR FET and quantitative concentration information can be obtained using a polymer-coated FBAR with a detection limit at the ppm level. The complementary performance of the sensing elements provides higher analytical efficiency. Additionally, a dual mixture of two types of freons (CFC-113 and HCFC-141b) is further analyzed with the dual-mode gas sensor. Owing to the small size and complementary metal-oxide semiconductor (CMOS)-compatibility of the system, the dual-mode gas sensor shows potential as a portable integrated sensing system for the analysis of gas mixtures in the future.

  20. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor.

    PubMed

    Lee, Jieun; Jang, Jaeman; Choi, Bongsik; Yoon, Jinsu; Kim, Jee-Yeon; Choi, Yang-Kyu; Kim, Dong Myong; Kim, Dae Hwan; Choi, Sung-Jin

    2015-07-21

    This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors. The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential advantage of high density and low noise performance. The biosensor shows a current response of 5.74 decades per pH for pH detection, which is 2.5 × 10(5) times larger than that of a single SiNW sensor. In addition, we demonstrate charged polymer detection using the biosensor, with a high current change of 4.5 × 10(5) with a 500 nM concentration of poly(allylamine hydrochloride). In addition, we demonstrate a wide dynamic range can be obtained by adjusting the liquid gate voltage. We expect that this biosensor will be advantageous and practical for biosensor applications which requires lower noise, high speed, and high density.

  1. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor

    PubMed Central

    Lee, Jieun; Jang, Jaeman; Choi, Bongsik; Yoon, Jinsu; Kim, Jee-Yeon; Choi, Yang-Kyu; Myong Kim, Dong; Hwan Kim, Dae; Choi, Sung-Jin

    2015-01-01

    This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors. The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential advantage of high density and low noise performance. The biosensor shows a current response of 5.74 decades per pH for pH detection, which is 2.5 × 105 times larger than that of a single SiNW sensor. In addition, we demonstrate charged polymer detection using the biosensor, with a high current change of 4.5 × 105 with a 500 nM concentration of poly(allylamine hydrochloride). In addition, we demonstrate a wide dynamic range can be obtained by adjusting the liquid gate voltage. We expect that this biosensor will be advantageous and practical for biosensor applications which requires lower noise, high speed, and high density. PMID:26197105

  2. Iridium Oxide pH Sensor Based on Stainless Steel Wire for pH Mapping on Metal Surface

    NASA Astrophysics Data System (ADS)

    Shahrestani, S.; Ismail, M. C.; Kakooei, S.; Beheshti, M.; Zabihiazadboni, M.; Zavareh, M. A.

    2018-03-01

    A simple technique to fabricate the iridium oxide pH sensor is useful in several applications such as medical, food processing and engineering material where it is able to detect the changes of pH. Generally, the fabrication technique can be classified into three types: electro-deposition iridium oxide film (EIrOF), activated iridium oxide film (AIROF) and sputtering iridium oxide film (SIROF). This study focuses on fabricating electrode, calibration and test. Electro-deposition iridium oxide film is a simple and effective method of fabricating this kind of sensor via cyclic voltammetry process. The iridium oxide thick film was successfully electrodeposited on the surface of stainless steel wire with 500 cycles of sweep potential. A further analysis under FESEM shows detailed image of iridium oxide film which has cauliflower-liked microstructure. EDX analysis shows the highest element present are iridium and oxygen which concluded that the process is successful. The iridium oxide based pH sensor has shown a good performance in comparison to conventional glass pH sensor when it is being calibrated in buffer solutions with 2, 4, 7 and 9 pH values. The iridium oxide pH sensor is specifically designed to measure the pH on the surface of metal plate.

  3. Wide-band 'black silicon' with atomic layer deposited NbN.

    PubMed

    Isakov, Kirill; Perros, Alexander Pyymaki; Shah, Ali; Lipsanen, Harri

    2018-08-17

    Antireflection surfaces are often utilized in optical components to reduce undesired reflection and increase absorption. We report on black silicon (b-Si) with dramatically enhanced absorption over a broad wavelength range (250-2500 nm) achieved by applying a 10-15 nm conformal coating of NbN with atomic layer deposition (ALD). The improvement is especially pronounced in the near infrared (NIR) range of 1100-2500 nm where absorption is increased by >90%. A significant increase of absorption is also observed over the ultraviolet range of 200-400 nm. Preceding NbN deposition with a nanostructured ALD Al 2 O 3 (n-Al 2 O 3 ) coating to enhance the NbN texture was also examined. Such texturing further improves absorption in the NIR, especially at longer wavelengths, strong absorption up to 4-5 μm wavelengths has been attested. For comparison, double side polished silicon and sapphire coated with 10 nm thick NbN exhibited absorption of only ∼55% in the NIR range of 1100-2500 nm. The results suggest a positive correlation between the surface area of NbN coating and optical absorption. Based on the wide-band absorption, the presented NbN-coated b-Si may be an attractive candidate for use in e.g. spectroscopic systems, infrared microbolometers.

  4. Alkali metals in addition to acidic pH activate the EvgS histidine kinase sensor in Escherichia coli.

    PubMed

    Eguchi, Yoko; Utsumi, Ryutaro

    2014-09-01

    Two-component signal transduction systems (TCSs) in bacteria perceive environmental stress and transmit the information via phosphorelay to adjust multiple cellular functions for adaptation. The EvgS/EvgA system is a TCS that confers acid resistance to Escherichia coli cells. Activation of the EvgS sensor initiates a cascade of transcription factors, EvgA, YdeO, and GadE, which induce the expression of a large group of acid resistance genes. We searched for signals activating EvgS and found that a high concentration of alkali metals (Na(+), K(+)) in addition to low pH was essential for the activation. EvgS is a histidine kinase, with a large periplasmic sensor region consisting of two tandem PBPb (bacterial periplasmic solute-binding protein) domains at its N terminus. The periplasmic sensor region of EvgS was necessary for EvgS activation, and Leu152, located within the first PBPb domain, was involved in the activation. Furthermore, chimeras of EvgS and PhoQ histidine kinases suggested that alkali metals were perceived at the periplasmic sensor region, whereas the cytoplasmic linker domain, connecting the transmembrane region and the histidine kinase domain, was required for low-pH perception. Copyright © 2014, American Society for Microbiology. All Rights Reserved.

  5. Microfabricated electrochemical sensors for combustion applications

    NASA Astrophysics Data System (ADS)

    Vulcano Rossi, Vitor A.; Mullen, Max R.; Karker, Nicholas A.; Zhao, Zhouying; Kowarz, Marek W.; Dutta, Prabir K.; Carpenter, Michael A.

    2015-05-01

    A new design for the miniaturization of an existing oxygen sensor is proposed based on the application of silicon microfabrication technologies to a cm sized O2 sensor demonstrated by Argonne National Laboratory and The Ohio State University which seals a metal/metal oxide within the structure to provide an integrated oxygen reference. The structural and processing changes suggested will result in a novel MEMS-based device meeting the semiconductor industry standards for cost efficiency and mass production. The MEMS design requires thin film depositions to create a YSZ membrane, palladium oxide reference and platinum electrodes. Pt electrodes are studied under operational conditions ensuring film conductivity over prolonged usage. SEM imaging confirms void formation after extended tests, consistent with the literature. Furthermore, hydrophilic bonding of pairs of silicon die samples containing the YSZ membrane and palladium oxide is discussed in order to create hermetic sealed cavities for oxygen reference. The introduction of tensile Si3N4 films to the backside of the silicon die generates bowing of the chips, compromising bond quality. This effect is controlled through the application of pressure during the initial bonding stages. In addition, KOH etching of the bonded die samples is discussed, and a YSZ membrane that survives the etching step is characterized by Raman spectroscopy.

  6. Growing Cobalt Silicide Columns In Silicon

    NASA Technical Reports Server (NTRS)

    Fathauer, Obert W.

    1991-01-01

    Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).

  7. A long lifetime chemical sensor: study on fluorescence property of fluorescein isothiocyanate and preparation of pH chemical sensor.

    PubMed

    Ma, Li Ying; Wang, Huai You; Xie, Hui; Xu, Li Xiao

    2004-07-01

    The fluorescence property of fluorescein isothiocyanate (FITC) in acid-alkaline medium was studied by spectrofluorimetry. The characteristic of FITC response to hydrogen ion has been examined in acid-alkaline solution. A novel pH chemical sensor was prepared based on the relationship between the relative fluorescence intensity of FITC and pH. The measurement of relative fluorescence intensity was carried out at 362 nm with excitation at 250 nm. The excellent linear relationship was obtained between relative fluorescence intensity and pH in the range of pH 1-5. The linear regression equation of the calibration graph is F = 66.871 + 6.605 pH (F is relative fluorescence intensity), with a correlation coefficient of linear regression of 0.9995. Effects of temperature, concentration of FITC on the response to hydrogen ion had been examined. It was important that this chemical sensor was long lifetime, and the property of response to hydrogen ion was stable for at least 70 days. This pH sensor can be used for measuring pH value in water solution. The accuracy is 0.01 pH unit. The results obtained by the pH sensor agreed with those by the pH meter. Obviously, this pH sensor is potential for determining pH change real time in biological system.

  8. A long lifetime chemical sensor: study on fluorescence property of fluorescein isothiocyanate and preparation of pH chemical sensor

    NASA Astrophysics Data System (ADS)

    Ma, Li Ying; Wang, Huai You; Xie, Hui; Xu, Li Xiao

    2004-07-01

    The fluorescence property of fluorescein isothiocyanate (FITC) in acid-alkaline medium was studied by spectrofluorimetry. The characteristic of FITC response to hydrogen ion has been examined in acid-alkaline solution. A novel pH chemical sensor was prepared based on the relationship between the relative fluorescence intensity of FITC and pH. The measurement of relative fluorescence intensity was carried out at 362 nm with excitation at 250 nm. The excellent linear relationship was obtained between relative fluorescence intensity and pH in the range of pH 1-5. The linear regression equation of the calibration graph is F=66.871+6.605 pH ( F is relative fluorescence intensity), with a correlation coefficient of linear regression of 0.9995. Effects of temperature, concentration of FITC on the response to hydrogen ion had been examined. It was important that this chemical sensor was long lifetime, and the property of response to hydrogen ion was stable for at least 70 days. This pH sensor can be used for measuring pH value in water solution. The accuracy is 0.01 pH unit. The results obtained by the pH sensor agreed with those by the pH meter. Obviously, this pH sensor is potential for determining pH change real time in biological system.

  9. Enhanced UV photoresponse of KrF-laser-synthesized single-wall carbon nanotubes/n-silicon hybrid photovoltaic devices.

    PubMed

    Le Borgne, V; Gautier, L A; Castrucci, P; Del Gobbo, S; De Crescenzi, M; El Khakani, M A

    2012-06-01

    We report on the KrF-laser ablation synthesis, purification and photocurrent generation properties of single-wall carbon nanotubes (SWCNTs). The thermally purified SWCNTs are integrated into hybrid photovoltaic (PV) devices by spin-coating them onto n-Si substrates. These novel SWCNTs/n-Si hybrid devices are shown to generate significant photocurrent (PC) over the entire 250-1050 nm light spectrum with external quantum efficiencies (EQE) reaching up to ~23%. Our SWCNTs/n-Si hybrid devices are not only photoactive in the traditional spectral range of Si solar cells, but generate also significant PC in the UV domain (below 400 nm). This wider spectral response is believed to be the result of PC generation from both the SWCNTs themselves and the tremendous number of local p-n junctions created at the nanotubes/Si interface. To assess the prevalence of these two contributions, the EQE spectra and J-V characteristics of these hybrid devices were investigated in both planar and top-down configurations, as a function of SWCNTs' film thickness. A sizable increase in EQE in the near UV with respect to the silicon is observed in both configurations, with a more pronounced UV photoresponse in the planar mode, confirming thereby the role of SWCNTs in the photogeneration process. The PC generation is found to reach its maximum for an optimal the SWCNT film thickness, which is shown to correspond to the best trade-off between lowest electrical resistance and highest optical transparency. Finally, by analyzing the J-V characteristics of our SWCNTs/n-Si devices with an equivalent circuit model, we were able to point out the contribution of the various electrical components involved in the photogeneration process. The SWCNTs-based devices demonstrated here open up the prospect for their use in highly effective photovoltaics and/or UV-light sensors.

  10. Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

    DOE PAGES

    Cartiglia, N.; Staiano, A.; Sola, V.; ...

    2017-04-01

    In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low- Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm 2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup includedmore » three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.« less

  11. Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

    NASA Astrophysics Data System (ADS)

    Cartiglia, N.; Staiano, A.; Sola, V.; Arcidiacono, R.; Cirio, R.; Cenna, F.; Ferrero, M.; Monaco, V.; Mulargia, R.; Obertino, M.; Ravera, F.; Sacchi, R.; Bellora, A.; Durando, S.; Mandurrino, M.; Minafra, N.; Fadeyev, V.; Freeman, P.; Galloway, Z.; Gkougkousis, E.; Grabas, H.; Gruey, B.; Labitan, C. A.; Losakul, R.; Luce, Z.; McKinney-Martinez, F.; Sadrozinski, H. F.-W.; Seiden, A.; Spencer, E.; Wilder, M.; Woods, N.; Zatserklyaniy, A.; Pellegrini, G.; Hidalgo, S.; Carulla, M.; Flores, D.; Merlos, A.; Quirion, D.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Zavrtanik, M.

    2017-04-01

    In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.

  12. Imaging intracellular pH in live cells with a genetically encoded red fluorescent protein sensor.

    PubMed

    Tantama, Mathew; Hung, Yin Pun; Yellen, Gary

    2011-07-06

    Intracellular pH affects protein structure and function, and proton gradients underlie the function of organelles such as lysosomes and mitochondria. We engineered a genetically encoded pH sensor by mutagenesis of the red fluorescent protein mKeima, providing a new tool to image intracellular pH in live cells. This sensor, named pHRed, is the first ratiometric, single-protein red fluorescent sensor of pH. Fluorescence emission of pHRed peaks at 610 nm while exhibiting dual excitation peaks at 440 and 585 nm that can be used for ratiometric imaging. The intensity ratio responds with an apparent pK(a) of 6.6 and a >10-fold dynamic range. Furthermore, pHRed has a pH-responsive fluorescence lifetime that changes by ~0.4 ns over physiological pH values and can be monitored with single-wavelength two-photon excitation. After characterizing the sensor, we tested pHRed's ability to monitor intracellular pH by imaging energy-dependent changes in cytosolic and mitochondrial pH.

  13. Low Power Consumption Gas Sensor Created from Silicon Nanowires/TiO2 Core-Shell Heterojunctions.

    PubMed

    Liu, Dong; Lin, Leimiao; Chen, Qiaofen; Zhou, Hongzhi; Wu, Jianmin

    2017-10-27

    Silicon nanowires/TiO 2 (SiNWs/TiO 2 ) array with core-shell nanostructure was created by sol-gel and drop-casting methods. The hybrid material displayed excellent sensing performance for CH 4 detection at room temperature. The chemiresistor sensor has a linear response toward CH 4 gas in the 30-120 ppm range with a detection limit of 20 ppm, which is well below most CH 4 sensors reported before. The enhanced gas sensing performance at room temperature was attributed to the creation of heterojunctions that form a depletion layer at the interface of SiNWs and TiO 2 layer. Adsorption of oxygen and corresponding gas analyte on TiO 2 layer could induce the change of depletion layer thickness and consequently the width of the SiNWs conductive channel, leading to a sensitive conductive response toward gas analyte. Compared to conventional metal oxide gas sensors, the room temperature gas sensors constructed from SiNWs/TiO 2 do not need an additional heating device and work at power at the μW level. The low power consumption feature is of great importance for sensing devices, if they are widely deployed and connected to the Internet of Things. The innovation of room temperature sensing materials may push forward the integration of gas sensing element with wireless device.

  14. A pH sensing system using fluorescence-based fibre optical sensor capable of small volume sample measurement

    NASA Astrophysics Data System (ADS)

    Deng, Shijie; McAuliffe, Michael A. P.; Salaj-Kosla, Urszula; Wolfe, Raymond; Lewis, Liam; Huyet, Guillaume

    2017-02-01

    In this work, a low cost optical pH sensing system that allows for small volume sample measurements was developed. The system operates without the requirement of laboratory instruments (e.g. laser source, spectrometer and CCD camera), this lowers the cost and enhances the portability. In the system, an optical arrangement employing a dichroic filter was used which allows the excitation and emission light to be transmitted using a single fibre thus improving the collection efficiency of the fluorescence signal and also the ability of inserting measurement. The pH sensor in the system uses bromocresol purple as the indicator which is immobilised by sol-gel technology through a dip-coating process. The sensor material was coated on the tip of a 1 mm diameter optical fibre which makes it possible for inserting into very small volume samples to measure the pH. In the system, a LED with a peak emission wavelength of 465 nm is used as the light source and a silicon photo-detector is used to detect the uorescence signal. Optical filters are applied after the LED and in front of the photo-detector to separate the excitation and emission light. The fluorescence signal collected is transferred to a PC through a DAQ and processed by a Labview-based graphic-user-interface (GUI). Experimental results show that the system is capable of sensing pH values from 5.3 to 8.7 with a linear response of R2=0.969. Results also show that the response times for a pH changes from 5.3 to 8.7 is approximately 150 s and for a 0.5 pH changes is approximately 50 s.

  15. Measuring pH variability using an experimental sensor on an underwater glider

    NASA Astrophysics Data System (ADS)

    Hemming, Michael P.; Kaiser, Jan; Heywood, Karen J.; Bakker, Dorothee C. E.; Boutin, Jacqueline; Shitashima, Kiminori; Lee, Gareth; Legge, Oliver; Onken, Reiner

    2017-05-01

    Autonomous underwater gliders offer the capability of measuring oceanic parameters continuously at high resolution in both vertical and horizontal planes, with timescales that can extend to many months. An experimental ion-sensitive field-effect transistor (ISFET) sensor measuring pH on the total scale was attached to a glider during the REP14-MED experiment in June 2014 in the Sardinian Sea in the northwestern Mediterranean. During the deployment, pH was sampled at depths of up to 1000 m along an 80 km transect over a period of 12 days. Water samples were collected from a nearby ship and analysed for dissolved inorganic carbon concentration and total alkalinity to derive the pH for validating the ISFET sensor measurements. The vertical resolution of the pH sensor was good (1 to 2 m), but stability was poor and the sensor drifted in a non-monotonous fashion. In order to remove the sensor drift, a depth-constant time-varying offset was applied throughout the water column for each dive, reducing the spread of the data by approximately two-thirds. Furthermore, the ISFET sensor required temperature- and pressure-based corrections, which were achieved using linear regression. Correcting for this decreased the apparent sensor pH variability by a further 13 to 31 %. Sunlight caused an apparent sensor pH decrease of up to 0.1 in surface waters around local noon, highlighting the importance of shielding the sensor from light in future deployments. The corrected pH from the ISFET sensor is presented along with potential temperature, salinity, potential density anomalies (σθ), and dissolved oxygen concentrations (c(O2)) measured by the glider, providing insights into the physical and biogeochemical variability in the Sardinian Sea. The pH maxima were identified close to the depth of the summer chlorophyll maximum, where high c(O2) values were also found. Longitudinal pH variations at depth (σθ > 28. 8 kg m-3) highlighted the variability of water masses in the Sardinian

  16. Sensing nitrous oxide with QCL-coupled silicon-on-sapphire ring resonators.

    PubMed

    Smith, Clinton J; Shankar, Raji; Laderer, Matthew; Frish, Michael B; Loncar, Marko; Allen, Mark G

    2015-03-09

    We report the initial evaluation of a mid-infrared QCL-coupled silicon-on-sapphire ring resonator gas sensor. The device probes the N(2)O 2241.79 cm(-1) optical transition (R23 line) in the ν(3) vibrational band. N(2)O concentration is deduced using a non-linear least squares fit, based on coupled-mode theory, of the change in ring resonator Q due to gas absorption losses in the evanescent portion of the waveguide optical mode. These early experiments demonstrated response to 5000 ppmv N(2)O.

  17. Paper-based potentiometric pH sensor using carbon electrode drawn by pencil

    NASA Astrophysics Data System (ADS)

    Kawahara, Ryotaro; Sahatiya, Parikshit; Badhulika, Sushmee; Uno, Shigeyasu

    2018-04-01

    A flexible and disposable paper-based pH sensor fabricated with a pencil-drawn working electrode and a Ag/AgCl paste reference electrode is demonstrated for the first time to show pH response by the potentiometric principle. The sensor substrate is made of chromatography paper with a wax-printed hydrophobic area, and various types of carbon pencils are tested as working electrodes. The pH sensitivities of the electrodes drawn by carbon pencils with different hardnesses range from 16.5 to 26.9 mV/pH. The proposed sensor is expected to be more robust against shape change in electrodes on a flexible substrate than other types of chemiresistive/amperometric pH sensors.

  18. Microneedle pH Sensor: Direct, Label-Free, Real-Time Detection of Cerebrospinal Fluid and Bladder pH.

    PubMed

    Mani, Ganesh Kumar; Miyakoda, Kousei; Saito, Asuka; Yasoda, Yutaka; Kajiwara, Kagemasa; Kimura, Minoru; Tsuchiya, Kazuyoshi

    2017-07-05

    Acid-base homeostasis (body pH) inside the body is precisely controlled by the kidneys and lungs and buffer systems, such that even a minor pH change could severely affect many organs. Blood and urine pH tests are common in day-to-day clinical trials and require little effort for diagnosis. There is always a great demand for in vivo testing to understand more about body metabolism and to provide effective diagnosis and therapy. In this article, we report the simple fabrication of microneedle-based direct, label-free, and real-time pH sensors. The reference and working electrodes were Ag/AgCl thick films and ZnO thin films on tungsten (W) microneedles, respectively. The morphological and structural characteristics of microneedles were carefully investigated through various analytical methods. The developed sensor exhibited a Nernstian response of -46 mV/pH. Different conditions were used to test the sensor to confirm their accuracy and stability, such as various buffer solutions, with respect to time, and we compared the reading with commercial pH electrodes. Besides that, the fabricated microneedle sensor ability is proven by in vivo testing in mouse cerebrospinal fluid (CSF) and bladders. The pH sensor procedure reported here is totally reversible, and results were reproducible after several rounds of testing.

  19. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Yan, Di; Bullock, James

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} formore » 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.« less

  20. Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Krupanidhi, S. B.

    Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic ({beta}) and hexagonal ({alpha}) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 deg. C when compared to the samples grown in the absence of silicon nitridemore » buffer layer and with silicon nitride buffer layer grown at 600 deg. C. Core-level photoelectron spectroscopy of Si{sub x}N{sub y} layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors ({approx}1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively.« less