n-type si-based photoelectrochemical: Topics by Science.gov

Sample records for n-type si-based photoelectrochemical

CuO-Functionalized Silicon Photoanodes for Photoelectrochemical Water Splitting Devices.

PubMed

Shi, Yuanyuan; Gimbert-Suriñach, Carolina; Han, Tingting; Berardi, Serena; Lanza, Mario; Llobet, Antoni

2016-01-13

One main difficulty for the technological development of photoelectrochemical (PEC) water splitting (WS) devices is the fabrication of active, stable and cost-effective photoelectrodes that ensure high performance. Here, we report the development of a CuO/Silicon based photoanode, which shows an onset potential for the water oxidation of 0.53 V vs SCE at pH 9, that is, an overpotential of 75 mV, and high stability above 10 h. These values account for a photovoltage of 420 mV due to the absorbed photons by silicon, as proven by comparing with analogous CuO/FTO electrodes that are not photoactive. The photoanodes have been fabricated by sputtering a thin film of Cu(0) on commercially available n-type Si wafers, followed by a photoelectrochemical treatment in basic pH conditions. The resulting CuO/Cu layer acts as (1) protective layer to avoid the corrosion of nSi, (2) p-type hole conducting layer for efficient charge separation and transportation, and (3) electrocatalyst to reduce the overpotential of the water oxidation reaction. The low cost, low toxicity, and good performance of CuO-based coatings can be an attractive solution to functionalize unstable materials for solar energy conversion.
p-Type Doping of GaN Nanowires Characterized by Photoelectrochemical Measurements.

PubMed

Kamimura, Jumpei; Bogdanoff, Peter; Ramsteiner, Manfred; Corfdir, Pierre; Feix, Felix; Geelhaar, Lutz; Riechert, Henning

2017-03-08

GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. In a systematic series of experiments, the amount of Mg supplied during NW growth was varied. The incorporation of Mg into the NWs was confirmed by the observation of donor-acceptor pairs and acceptor-bound excitons in low-temperature photoluminescence spectroscopy. Quantitative information about the Mg concentrations was deduced from Raman scattering by local vibrational modes related to Mg. In order to study the type and density of charge carriers present in the NWs, we employed two photoelectrochemical techniques, open-circuit potential and Mott-Schottky measurements. Both methods showed the expected transition from n-type to p-type conductivity with increasing Mg doping level, and the latter characterization technique allowed us to quantify the charge carrier concentration. Beyond the quantitative information obtained for Mg doping of GaN NWs, our systematic and comprehensive investigation demonstrates the benefit of photoelectrochemical methods for the analysis of doping in semiconductor NWs in general.
Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers.

PubMed

Cao, Dezhong; Xiao, Hongdi; Gao, Qingxue; Yang, Xiaokun; Luan, Caina; Mao, Hongzhi; Liu, Jianqiang; Liu, Xiangdong

2017-08-17

Herein, a lift-off mesoporous GaN-based thin film, which consisted of a strong phase-separated InGaN/GaN layer and an n-GaN layer, was fabricated via an electrochemical etching method in a hydrofluoric acid (HF) solution for the first time and then transferred onto quartz or n-Si substrates, acting as photoanodes during photoelectrochemical (PEC) water splitting in a 1 M NaCl aqueous solution. Compared to the as-grown GaN-based film, the transferred GaN-based thin films possess higher and blue-shifted light emission, presumably resulting from an increase in the surface area and stress relaxation in the InGaN/GaN layer embedded on the mesoporous n-GaN. The properties such as (i) high photoconversion efficiency, (ii) low turn-on voltage (-0.79 V versus Ag/AgCl), and (iii) outstanding stability enable the transferred films to have excellent PEC water splitting ability. Furthermore, as compared to the film transferred onto the quartz substrate, the film transferred onto the n-Si substrate exhibits higher photoconversion efficiency (2.99% at -0.10 V) due to holes (h + ) in the mesoporous n-GaN layer that originate from the n-Si substrate.
Tandem Core–Shell Si–Ta 3N 5 Photoanodes for Photoelectrochemical Water Splitting

DOE PAGES

Narkeviciute, Ieva; Chakthranont, Pongkarn; Mackus, Adriaan J. M.; ...

2016-11-22

Here, nanostructured core–shell Si–Ta 3N 5 photoanodes were designed and synthesized to overcome charge transport limitations of Ta 3N 5 for photoelectrochemical water splitting. The core–shell devices were fabricated by atomic layer deposition of amorphous Ta 2O 5 onto nanostructured Si and subsequent nitridation to crystalline Ta 3N 5. Nanostructuring with a thin shell of Ta 3N 5 results in a 10-fold improvement in photocurrent compared to a planar device of the same thickness. In examining thickness dependence of the Ta 3N 5 shell from 10 to 70 nm, superior photocurrent and absorbed-photon-to-current efficiencies are obtained from the thinner Tamore » 3N 5 shells, indicating minority carrier diffusion lengths on the order of tens of nanometers. The fabrication of a heterostructure based on a semiconducting, n-type Si core produced a tandem photoanode with a photocurrent onset shifted to lower potentials by 200 mV. CoTiO x and NiO x water oxidation cocatalysts were deposited onto the Si–Ta 3N 5 to yield active photoanodes that with NiO x retained 50–60% of their maximum photocurrent after 24 h chronoamperometry experiments and are thus among the most stable Ta 3N 5 photoanodes reported to date.« less
Toward Cost-Effective Manufacturing of Silicon Solar Cells: Electrodeposition of High-Quality Si Films in a CaCl2 -based Molten Salt.

PubMed

Yang, Xiao; Ji, Li; Zou, Xingli; Lim, Taeho; Zhao, Ji; Yu, Edward T; Bard, Allen J

2017-11-20

Electrodeposition of Si films from a Si-containing electrolyte is a cost-effective approach for the manufacturing of solar cells. Proposals relying on fluoride-based molten salts have suffered from low product quality due to difficulties in impurity control. Here we demonstrate the successful electrodeposition of high-quality Si films from a CaCl 2 -based molten salt. Soluble Si IV -O anions generated from solid SiO 2 are electrodeposited onto a graphite substrate to form a dense film of crystalline Si. Impurities in the deposited Si film are controlled at low concentrations (both B and P are less than 1 ppm). In the photoelectrochemical measurements, the film shows p-type semiconductor character and large photocurrent. A p-n junction fabricated from the deposited Si film exhibits clear photovoltaic effects. This study represents the first step to the ultimate goal of developing a cost-effective manufacturing process for Si solar cells based on electrodeposition. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Enhanced photoelectrochemical aptasensing platform based on exciton energy transfer between CdSeTe alloyed quantum dots and SiO2@Au nanocomposites.

PubMed

Fan, Gao-Chao; Zhu, Hua; Shen, Qingming; Han, Li; Zhao, Ming; Zhang, Jian-Rong; Zhu, Jun-Jie

2015-04-25

High-efficient exciton energy transfer between CdSeTe alloyed quantum dots and SiO2@Au nanocomposites was applied to develop an enhanced photoelectrochemical aptasensing platform with ultrahigh sensitivity, good selectivity, reproducibility and stability.
Characterization of opto-electrical enhancement of tandem photoelectrochemical cells by using photoconductive-AFM

NASA Astrophysics Data System (ADS)

Park, Sun-Young; Elbersen, Rick; Huskens, Jurriaan; Gardeniers, Han; Lee, Joo-Yul; Mul, Guido; Heo, Jinhee

2017-07-01

Solar-to-hydrogen conversion by water splitting in photoelectrochemical cells (PECs) is a promising approach to alleviate problems associated with intermittency in solar energy supply and demand. Several interfacial resistances in photoelectrodes limit the performance of such cells, while the properties of interfaces are not easy to analyze in situ. We applied photoconductive-AFM to analyze the performance of WO3/p+n Si photoanodes, containing an ultra-thin metal interface of either Au or Pt. The Au interface consisted of Au nanoparticles with well-ordered interspacing, while Pt was present in the form of a continuous film. Photoconductive-AFM data show that upon illumination significantly larger currents are measured for the WO3/p+n Si anode equipped with the Au interface, as compared to the WO3/p+n Si anode with the Pt interface, in agreement with the better performance of the former electrode in a photoelectrochemical cell. The remarkable performance of the Au-containing electrode is proposed to be the result of favorable electron-hole recombination rates induced by the Au nanoparticles in a plasmon resonance excited state.
Enhanced photoelectrochemical properties of copper-assisted catalyzed etching black silicon by electrodepositing cobalt

NASA Astrophysics Data System (ADS)

Cai, Weidong; Xiong, Haiying; Su, Xiaodong; Zhou, Hao; Shen, Mingrong; Fang, Liang

2017-11-01

Black silicon (Si) photoelectrodes are promising for improving the performance of photoelectrochemical (PEC) water splitting. Here, we report the fabrication of p-black Si and n+p-black Si photocathodes via a controllable copper-assisted catalyzed etching method. The etching process affects only the topmost less than 200 nm of Si and is independent of the surface doping. The synergistic effects of the excellent light harvesting of the black Si and the improved charge transfer properties of the p-n junction boost the production and utilization of photogenerated carriers. The mean reflectance of the pristine Si samples is about 10% from 400 to 950 nm, while that of the black Si samples is reduced as low as 5%. In addition, the PEC properties of the n+p-black Si photocathode can be further enhanced by depositing a cobalt (Co) layer. Compared with the p-Si sample, the onset potential of the Co/n+p-black Si photocathode is positively shifted by 560 mV to 0.33 V vs. reversible hydrogen electrode and the saturation photocurrent density is increased from 22.7 to 32.6 mA/cm2. The design of the Co/n+p-black Si photocathode offers an efficient strategy for preparing PEC solar energy conversion devices.
Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Mishkat-Ul-Masabih, Saadat; Leonard, John T.; Feezell, Daniel F.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2017-01-01

We investigate the photo-electrochemical (PEC) etching of Si-doped GaN samples grown on nonpolar GaN substrates, using a KOH/K2S2O8 solution and illuminated by a Xe arc lamp or a Q-switched 355 nm laser. The etch rate with the arc lamp decreased as the doping concentration increased, and the etching stopped for concentrations above 7.7 × 1018 cm-3. The high peak intensity of the Q-switched laser extended the etchable concentration to 2.4 × 1019 cm-3, with an etch rate of 14 nm/min. Compositionally selective etching was demonstrated, with an RMS surface roughness of 1.6 nm after etching down to an n-Al0.20Ga0.80N etch stop layer.
A label-free photoelectrochemical biosensor for urokinase-type plasminogen activator detection based on a g-C3N4/CdS nanocomposite.

PubMed

Liu, Xing-Pei; Chen, Jing-Shuai; Mao, Chang-Jie; Niu, He-Lin; Song, Ji-Ming; Jin, Bao-Kang

2018-09-26

Herein, we established a novel ultrasensitive photoelectrochemical biosensor for detecting urokinase-type plasminogen activator (u-PA), based on a g-C 3 N 4 /CdS nanocomposite. The prepared nanocomposite was characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, ultraviolet-visible absorption spectroscopy, and Fourier transform infrared spectroscopy, thus indicating that the nanocomposite was prepared successfully. In the typical process, the prepared nanocomposite was deposited on the surface of a bare FTO electrode. After being air-dried, the g-C 3 N 4 /CdS nanocomposite modified electrode was successively incubated with antibody against urokinase-type plasminogen activator and the blocking agent BSA to produce a photoelectrochemical biosensor for u-PA. In the presence of target u-PA antigen, the photocurrent response of the prepared biosensor electrode decreased significantly. The proposed novel photoelectrochemical biosensor exhibited good sensitivity, specificity, and reproducibility for u-PA detection, and a low detection limit of 33 fg mL -1 , ranging from 1 μg mL -1 -0.1 pg mL -1 . The proposed strategy should provide a promising method for detection of other biomarkers. Copyright © 2018 Elsevier B.V. All rights reserved.
Facile fabrication of Si-doped TiO2 nanotubes photoanode for enhanced photoelectrochemical hydrogen generation

NASA Astrophysics Data System (ADS)

Dong, Zhenbiao; Ding, Dongyan; Li, Ting; Ning, Congqin

2018-04-01

Photoelectrochemical (PEC) water splitting based doping modified one dimensional (1D) titanium dioxide (TiO2) nanostructures provide an efficient method for hydrogen generation. Here we first successfully fabricated 1D Si-doped TiO2 (Ti-Si-O) nanotube arrays through anodizing Ti-Si alloys with different Si amount, and reported the PEC properties for water splitting. The Ti-Si-O nanotube arrays fabricated on Ti-5 wt.% Si alloy and annealed at 600 °C possess higher PEC activity, yielding a higher photocurrent density of 0.83 mA/cm2 at 0 V vs. Ag/AgCl. The maximum photoconversion efﬁciency was 0.54%, which was 2.7 times the photoconversion efficiency of undoped TiO2.
High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

NASA Astrophysics Data System (ADS)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.
Fabrication of current confinement aperture structure by transforming a conductive GaN:Si epitaxial layer into an insulating GaOx layer.

PubMed

Lin, Chia-Feng; Lee, Wen-Che; Shieh, Bing-Cheng; Chen, Danti; Wang, Dili; Han, Jung

2014-12-24

We report here a simple and robust process to convert embedded conductive GaN epilayers into insulating GaOx and demonstrate its efficacy in vertical current blocking and lateral current steering in a working LED device. The fabrication processes consist of laser scribing, electrochemical (EC) wet-etching, photoelectrochemical (PEC) oxidation, and thermal oxidization of a sacrificial n(+)-GaN:Si layer. The conversion of GaN is made possible through an intermediate stage of porosification where the standard n-type GaN epilayers can be laterally and selectively anodized into a nanoporous (NP) texture while keeping the rest of the layers intact. The fibrous texture of NP GaN with an average wall thickness of less than 100 nm dramatically increases the surface-to-volume ratio and facilitates a rapid oxidation process of GaN into GaOX. The GaOX aperture was formed on the n-side of the LED between the active region and the n-type GaN layer. The wavelength blueshift phenomena of electroluminescence spectra is observed in the treated aperture-emission LED structure (441.5 nm) when compared to nontreated LED structure (443.7 nm) at 0.1 mA. The observation of aperture-confined electroluminescence from an InGaN LED structure suggests that the NP GaN based oxidation will play an enabling role in the design and fabrication of III-nitride photonic devices.
The role of ultra-thin SiO2 layers in metal-insulator-semiconductor (MIS) photoelectrochemical devices (Presentation Recording)

NASA Astrophysics Data System (ADS)

Esposito, Daniel V.

2015-08-01

Solid-state junctions based on a metal-insulator-semiconductor (MIS) architecture are of great interest for a number of optoelectronic applications such as photovoltaics, photoelectrochemical cells, and photodetection. One major advantage of the MIS junction compared to the closely related metal-semiconductor junction, or Schottky junction, is that the thin insulating layer (1-3 nm thick) that separates the metal and semiconductor can significantly reduce the density of undesirable interfacial mid-gap states. The reduction in mid-gap states helps "un-pin" the junction, allowing for significantly higher built-in-voltages to be achieved. A second major advantage of the MIS junction is that the thin insulating layer can also protect the underlying semiconductor from corrosion in an electrochemical environment, making the MIS architecture well-suited for application in (photo)electrochemical applications. In this presentation, discontinuous Si-based MIS junctions immersed in electrolyte are explored for use as i.) photoelectrodes for solar-water splitting in photoelectrochemical cells (PECs) and ii.) position-sensitive photodetectors. The development and optimization of MIS photoelectrodes for both of these applications relies heavily on understanding how processing of the thin SiO2 layer impacts the properties of nano- and micro-scale MIS junctions, as well as the interactions of the insulating layer with the electrolyte. In this work, we systematically explore the effects of insulator thickness, synthesis method, and chemical treatment on the photoelectrochemical and electrochemical properties of these MIS devices. It is shown that electrolyte-induced inversion plays a critical role in determining the charge carrier dynamics within the MIS photoelectrodes for both applications.
Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties.

PubMed

Hwang, Yun Jeong; Wu, Cheng Hao; Hahn, Chris; Jeong, Hoon Eui; Yang, Peidong

2012-03-14

Three-dimensional hierarchical nanostructures were synthesized by the halide chemical vapor deposition of InGaN nanowires on Si wire arrays. Single phase InGaN nanowires grew vertically on the sidewalls of Si wires and acted as a high surface area photoanode for solar water splitting. Electrochemical measurements showed that the photocurrent density with hierarchical Si/InGaN nanowire arrays increased by 5 times compared to the photocurrent density with InGaN nanowire arrays grown on planar Si (1.23 V vs RHE). High-resolution transmission electron microscopy showed that InGaN nanowires are stable after 15 h of illumination. These measurements show that Si/InGaN hierarchical nanostructures are a viable high surface area electrode geometry for solar water splitting. © 2012 American Chemical Society
Pictures of Processes: Automated Graph Rewriting for Monoidal Categories and Applications to Quantum Computing

NASA Astrophysics Data System (ADS)

Kumar, Bhupendra

Light assisted or driven fuel generation by carbon dioxide and proton reduction can be achieved by a p-type semiconductor/liquid junction. There are four different types of schemes which are typically used for carbon dioxide and proton reduction for fuel generation applications. In these systems, the semiconductor can serve the dual role of a catalyst and a light absorber. Specific electrocatalysts (heterogeneous and homogeneous) can be driven by p-type semiconductor where it works only as light absorber in order to achieve better selectivity and faster rates of catalysis. The p-type semiconductor/molecular catalyst junction is primarily explored in this dissertation for CO2 and proton photoelectrochemical reduction. A general principle for the operation of p-type semiconductor/molecular junctions is proposed and validated for several molecular catalysts in contact with p-Si photocathode. It is also shown that the light assisted homogeneous and heterogeneous catalysis can coexist. This principle is extended to achieve direct conversion of CO 2 to methanol on Platinum nanoparticles decorated p-Si in aqueous medium through pyridine/pyridinium system for CO2 reduction. An open circuit voltage higher than 600 mV is achieved for p-Si/Re(bipy-tBu)(CO) 3Cl [where bipy-tBu = 4,4'- tert-butyl-2,2'-bipyridine] (Re-catalyst) junction. The photoelectrochemical conversion of CO2 to CO using a p-Si/Re-catalyst junction is obtained at 100 % Faradaic efficiency. The homogeneous catalytic current density for CO2 by p-Si/Re-catalyst junction under illumination scales linearly with illumination intensity (both polychromatic and monochromatic). This indicates that the homogeneous catalysis is light driven for the p-Si/Re-catalyst junction system up to light intensities approaching one sun. The photoelectrochemical reduction of other active members of Re(bipyridyl)(CO)3Cl molecular catalyst family is also observed on illuminated p-Si photocathode. Effects of surface modification and nanowire morphology of the p-Si photocathode on the homogeneous catalytic reduction of CO2 by using p-Si/Re-catalyst junction are also described in this dissertation. For phenyl ethyl modified p-Si photocathode, the rate of homogeneous catalysis for CO2 reduction by Re-catalyst is three times greater than glassy carbon electrode and six times greater than the hexyl modified and the hydrogen terminated p-Si photocathodes. When hexyl modified p-Si nanowires are used as photocathode, the homogeneous catalytic current density increased by a factor of two compared to planar p-Si (both freshly etched and hexyl modified) photocathode. A successful light assisted generation of syngas (H2:CO = 2:1) from CO2 and water is achieved by using p-Si/Re-catalyst. In this system, water is reduced heterogeneously on p-Si surface and CO2 is reduced homogeneously by Re-catalyst. The same principle is extended to the homogeneous proton reduction by using p-Si/[FeFe] complex junction where [FeFe] complex [Fe2(micro-bdt)(CO) 6] (bdt = benzene-1,2-dithiolate)] is a proton reduction molecular catalyst. A short circuit quantum efficiency of 79 % with 100 % Faradaic efficiency and 600 mV open circuit are achieved by using p-Si/[FeFe] complex for proton reduction with 300 mM perchloric acid as a proton source. Cobalt difluororyl-diglyoximate (Co-catalyst) is a proton reduction catalyst with only 200 mV of overpotential for the hydrogen evolution reaction (HRE). The Co-catalyst is photoelectrochemically reduced with a photovoltage of 470 mV on illuminated p-Si photocathode. For p-Si photocathodes, the overpotential for proton reduction is over 1 V. In principle, p-Si/Co-catalyst junction can reduce proton to hydrogen homogeneously at underpotential. In a concluding effort, a wireless monolithic dual face single photoelectrode (multi junction photovoltaic cell which can generate a voltage higher 1.7 V) based photochemical cell is proposed for direct conversion of solar energy into liquid fuel. In this device, the two faces of the multijunction photoelectrode are serve as an anode and a cathode for water oxidation and fuel generation, respectively, and are separated by proton exchange membrane.
Solar Water Splitting with a Hydrogenase Integrated in Photoelectrochemical Tandem Cells.

PubMed

Nam, Dong Heon; Zhang, Jenny; Andrei, Virgil; Kornienko, Nikolay; Heidary, Nina; Wagner, Andreas; Nakanishi, Kenichi; Sokol, Katarzyna; Slater, Barnaby; Zebger, Ingo; Hofmann, Stephan; Fontecilla-Camps, Juan; Park, Chan Beum; Reisner, Erwin

2018-06-11

Hydrogenases (H2ases) are benchmark electrocatalysts in H2 production, both in biology and (photo)catalysis in vitro. We report the tailoring of a p-type Si photocathode for optimal loading and wiring of H2ase by the introduction of a hierarchical inverse opal (IO) TiO2 interlayer. This proton reducing Si|IO-TiO2|H2ase photocathode is capable of driving overall water splitting in combination with a complementary photoanode. We demonstrate unassisted (bias-free) water-splitting by wiring Si|IO-TiO2|H2ase to a modified BiVO4 photoanode in a photoelectrochemical (PEC) cell during several hours of irradiation. Connecting the Si|IO-TiO2|H2ase to a photosystem II (PSII) photoanode provides proof-of-concept for an engineered Z-scheme that replaces the non-complementary, natural light absorber photosystem I with a complementary abiotic silicon photocathode. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Si-H induced synthesis of Si/Cu2O nanowire arrays for photoelectrochemical water splitting

NASA Astrophysics Data System (ADS)

Zhang, Shaoyang; She, Guangwei; Li, Shengyang; Mu, Lixuan; Shi, Wensheng

2018-01-01

We report a facile and low-cost method to synthesize Si/Cu2O heterojunction nanowire arrays, without SiOx, at the Si/Cu2O interface. The reductive Si-H bonds on the surface of Si nanowires plays a key role in situ by reducing Cu(II) ions to Cu2O nanocubes and avoiding the SiOx interface layer. Different pH values would vary the electrochemical potential of reactions and as a result, different products would be formed. Utilized as a photoanode for water splitting, Si/Cu2O nanowire arrays exhibit good photoelectrochemical performance.
Bioinspired Molecular Co-Catalysts Bonded to a Silicon Photocathode for Solar Hydrogen Evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hou, Yidong

2011-11-08

The production of fuels from sunlight represents one of the main challenges in the development of a sustainable energy system. Hydrogen is the simplest fuel to produce and although platinum and other noble metals are efficient catalysts for photoelectrochemical hydrogen evolution earth-abundant alternatives are needed for large-scale use. We show that bioinspired molecular clusters based on molybdenum and sulphur evolve hydrogen at rates comparable to that of platinum. The incomplete cubane-like clusters (Mo{sub 3}S{sub 4}) efficiently catalyse the evolution of hydrogen when coupled to a p-type Si semiconductor that harvests red photons in the solar spectrum. The current densities atmore » the reversible potential match the requirement of a photoelectrochemical hydrogen production system with a solar-to-hydrogen efficiency in excess of 10% (ref. 16). The experimental observations are supported by density functional theory calculations of the Mo{sub 3}S{sub 4} clusters adsorbed on the hydrogen-terminated Si(100) surface, providing insights into the nature of the active site.« less
Photoelectrochemical Water Splitting Properties of Ti-Ni-Si-O Nanostructures on Ti-Ni-Si Alloy

PubMed Central

Dong, Zhenbiao; Ning, Congqin

2017-01-01

Ti-Ni-Si-O nanostructures were successfully prepared on Ti-1Ni-5Si alloy foils via electrochemical anodization in ethylene glycol/glycerol solutions containing a small amount of water. The Ti-Ni-Si-O nanostructures were characterized by field-emission scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), and diffuse reflectance absorption spectra. Furthermore, the photoelectrochemical water splitting properties of the Ti-Ni-Si-O nanostructure films were investigated. It was found that, after anodization, three different kinds of Ti-Ni-Si-O nanostructures formed in the α-Ti phase region, Ti2Ni phase region, and Ti5Si3 phase region of the alloy surface. Both the anatase and rutile phases of Ti-Ni-Si-O oxide appeared after annealing at 500 °C for 2 h. The photocurrent density obtained from the Ti-Ni-Si-O nanostructure photoanodes was 0.45 mA/cm2 at 0 V (vs. Ag/AgCl) in 1 M KOH solution. The above findings make it feasible to further explore excellent photoelectrochemical properties of the nanostructure-modified surface of Ti-Ni-Si ternary alloys. PMID:29088083

Photoelectrochemical Water Splitting Properties of Ti-Ni-Si-O Nanostructures on Ti-Ni-Si Alloy.

PubMed

Li, Ting; Ding, Dongyan; Dong, Zhenbiao; Ning, Congqin

2017-10-31

Ti-Ni-Si-O nanostructures were successfully prepared on Ti-1Ni-5Si alloy foils via electrochemical anodization in ethylene glycol/glycerol solutions containing a small amount of water. The Ti-Ni-Si-O nanostructures were characterized by field-emission scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), and diffuse reflectance absorption spectra. Furthermore, the photoelectrochemical water splitting properties of the Ti-Ni-Si-O nanostructure films were investigated. It was found that, after anodization, three different kinds of Ti-Ni-Si-O nanostructures formed in the α-Ti phase region, Ti₂Ni phase region, and Ti₅Si₃ phase region of the alloy surface. Both the anatase and rutile phases of Ti-Ni-Si-O oxide appeared after annealing at 500 °C for 2 h. The photocurrent density obtained from the Ti-Ni-Si-O nanostructure photoanodes was 0.45 mA/cm² at 0 V (vs. Ag/AgCl) in 1 M KOH solution. The above findings make it feasible to further explore excellent photoelectrochemical properties of the nanostructure-modified surface of Ti-Ni-Si ternary alloys.
Photo-electrochemically synthesized light emtting nanoporous silicon based UV photodetector: influence of current density

NASA Astrophysics Data System (ADS)

Thahe, Asad A.; Bidin, Noriah; Hassan, Z.; Bakhtiar, Hazri; Qaeed, M. A.; Bououdina, Mohamed; Ahmed, Naser M.; Talib, Zainal A.; Al-Azawi, Mohammed A.; Alqaraghuli, Hasan; Uday, M. B.; Hamad Ahmed, Omar

2017-11-01

Nanoporous silicon (n-PSi) with diverse morphologies was prepared on silicon (Si) substrate via photo-electrochemical etching technique. The role of changing current density (15, 30 and 45 mA cm-2) on the structure, morphology and optical properties was determined. As-prepared samples were systematically characterized using XRD, FESEM, AFM and photoluminescence measurements. Furthermore, the achieved n-PSi sample was used to make metal-semiconductor-metal (MSM) UV photodetector. The performance of these photodetectors was evaluated upon exposing to visible light of wavelength 530 nm (power density 1.55 mW cm-2), which exhibited very high sensitivity of 150.26 with a low dark current. The achieved internal photoconductive gain was 2.50, the photoresponse peak was 1.23 A W-1 and the response time was 0.49 s and the recovery time was 0.47 s. Excellent attributes of the fabricated photodetectors suggest that the present approach may provide a cost effective and simple way to obtain n-PSi suitable for sundry applications.
Evident Enhancement of Photoelectrochemical Hydrogen Production by Electroless Deposition of M-B (M = Ni, Co) Catalysts on Silicon Nanowire Arrays.

PubMed

Yang, Yong; Wang, Mei; Zhang, Peili; Wang, Weihan; Han, Hongxian; Sun, Licheng

2016-11-09

Modification of p-type Si surface by active and stable earth-abundant electrocatalysts is an effective strategy to improve the sluggish kinetics for the hydrogen evolution reaction (HER) at p-Si/electrolyte interface and to develop highly efficient and low-cost photocathodes for hydrogen production from water. To this end, Si nanowire (Si-NW) array has been loaded with highly efficient electrocatalysts, M-B (M = Ni, Co), by facile and quick electroless plating to build M-B catalyst-modified Si nanowire-array-textured photocathodes for water reduction to H 2 . Compared with the bare Si-NW array, composite Si-NWs/M-B arrays display evidently enhanced photoelectrochemical (PEC) performance. The onset potential (V phon ) of cathodic photocurrent is positively shifted by 530-540 mV to 0.44-0.45 V vs RHE, and the short-circuit current density (J sc ) is up to 19.5 mA cm -2 in neutral buffer solution under simulated 1 sun illumination. Impressively, the half-cell photopower conversion efficiencies (η hc ) of the optimized Si-NWs/Co-B (2.53%) and Si-NWs/Ni-B (2.45%) are comparable to that of Si-NWs/Pt (2.46%). In terms of the large J sc , V phon , and η hc values, as well as the high Faradaic efficiency, Si-NWs/M-B electrodes are among the top performing Si photocathodes which are modified with HER electrocatalysts but have no buried solid/solid junction.
Luminescent Tellurium-Doped Cadmium Sulfide Electrodes as Probes of Semiconductor Excited-State Deactivation Processes in Photoelectrochemical Cells.

DTIC Science & Technology

1980-08-12

photocurrent and emission intensity. Whereas CdS:Te electrochemistry consisted of oxidation of an electrolyte 2+ reductant, ZnO underwent photoanodic...employed n- and 1 3 2,3 3 3,4p-type GaPl’ n-type ZnO , n-type CdS , and n- and p-type GaAs. We have focussed our attention recently on n-type, tellurium...should point out that our treatment of Or and 0x is not without precedent. Both GaP- and ZnO -based PECs have been examined in this regard.l12 The
Surface Interrogation Scanning Electrochemical Microscopy for a Photoelectrochemical Reaction: Water Oxidation on a Hematite Surface.

PubMed

Kim, Jae Young; Ahn, Hyun S; Bard, Allen J

2018-03-06

To understand the pathway of a photoelectrochemical (PEC) reaction, quantitative knowledge of reaction intermediates is important. We describe here surface interrogation scanning electrochemical microscopy for this purpose (PEC SI-SECM), where a light pulse to a photoactive semiconductor film at a given potential generates intermediates that are then analyzed by a tip generated titrant at known times after the light pulse. The improvements were demonstrated for photoelectrochemical water oxidation (oxygen evolution) reaction on a hematite surface. The density of photoactive sites, proposed to be Fe 4+ species, on a hematite surface was successfully quantified, and the photoelectrochemical water oxidation reaction dynamics were elucidated by time-dependent redox titration experiments. The new configuration of PEC SI-SECM should find expanded usage to understand and investigate more complicated PEC reactions with other materials.
Photoelectrochemical etching measurement of defect density in GaN grown by nanoheteroepitaxy

NASA Astrophysics Data System (ADS)

Ferdous, M. S.; Sun, X. Y.; Wang, X.; Fairchild, M. N.; Hersee, S. D.

2006-05-01

The density of dislocations in n-type GaN was measured by photoelectrochemical etching. A 10× reduction in dislocation density was observed compared to planar GaN grown at the same time. Cross-sectional transmission electron microscopy studies indicate that defect reduction is due to the mutual cancellation of dislocations with equal and opposite Burger's vectors. The nanoheteroepitaxy sample exhibited significantly higher photoluminescence intensity and higher electron mobility than the planar reference sample.
Photoelectrochemical Solar Cells.

ERIC Educational Resources Information Center

McDevitt, John T.

1984-01-01

This introduction to photoelectrochemical (PEC) cells reviews topics pertaining to solar energy conversion and demonstrates the ease with which a working PEC cell can be prepared with n-type silicon as the photoanode and a platinum counter electrode (both immersed in ethanolic ferrocene/ferricenium solutions). Experiments using the cell are…
Evaluation and optimization of mass transport of redox species in silicon microwire-array photoelectrodes

PubMed Central

Xiang, Chengxiang; Meng, Andrew C.; Lewis, Nathan S.

2012-01-01

Physical integration of a Ag electrical contact internally into a metal/substrate/microstructured Si wire array/oxide/Ag/electrolyte photoelectrochemical solar cell has produced structures that display relatively low ohmic resistance losses, as well as highly efficient mass transport of redox species in the absence of forced convection. Even with front-side illumination, such wire-array based photoelectrochemical solar cells do not require a transparent conducting oxide top contact. In contact with a test electrolyte that contained 50 mM/5.0 mM of the cobaltocenium+/0 redox species in CH3CN–1.0 M LiClO4, when the counterelectrode was placed in the solution and separated from the photoelectrode, mass transport restrictions of redox species in the internal volume of the Si wire array photoelectrode produced low fill factors and limited the obtainable current densities to 17.6 mA cm-2 even under high illumination. In contrast, when the physically integrated internal Ag film served as the counter electrode, the redox couple species were regenerated inside the internal volume of the photoelectrode, especially in regions where depletion of the redox species due to mass transport limitations would have otherwise occurred. This behavior allowed the integrated assembly to operate as a two-terminal, stand-alone, photoelectrochemical solar cell. The current density vs. voltage behavior of the integrated photoelectrochemical solar cell produced short-circuit current densities in excess of 80 mA cm-2 at high light intensities, and resulted in relatively low losses due to concentration overpotentials at 1 Sun illumination. The integrated wire array-based device architecture also provides design guidance for tandem photoelectrochemical cells for solar-driven water splitting. PMID:22904185
Dynamic Photoelectrochemical Device Using an Electrolyte-Permeable NiO x/SiO2/Si Photocathode with an Open-Circuit Potential of 0.75 V.

PubMed

Jung, Jin-Young; Yu, Jin-Young; Lee, Jung-Ho

2018-03-07

As a thermodynamic driving force obtained from sunlight, the open-circuit potential (OCP) in photoelectrochemical cells is typically limited by the photovoltage ( V ph ). In this work, we establish that the OCP can exceed the value of V ph when an electrolyte-permeable NiO x thin film is employed as an electrocatalyst in a Si photocathode. The built-in potential developed at the NiO x /Si junction is adjusted in situ according to the progress of the NiO x hydration for the hydrogen evolution reaction (HER). As a result of decoupling of the OCP from V ph , a high OCP value of 0.75 V (vs reversible hydrogen electrode) is obtained after 1 h operation of HER in an alkaline electrolyte (pH = 14), thus outperforming the highest value (0.64 V) reported to date with conventional Si photoelectrodes. This finding might offer insight into novel photocathode designs such as those based on tandem water-splitting systems.
Photoelectrochemical Cell of Hybrid Regioregular POLY(3-HEXYLTHIOPHENE-2,5-DIYL) and Molybdenum Disulfide Film

NASA Astrophysics Data System (ADS)

Abdelmola, Fatmaelzahraa M.; Ram, Manoj K.; Takshi, Arash; Stafanakos, Elias; Kumar, Ashok; Goswami, D. Yogi

The photoelectrochemical cell attracts attention worldwide due to conversion of optical energy into electricity, production of hydrogen through water splitting and use in photodetector and photo-sensor applications. We have been working on the photochemical cell based on regioregular polyhexylthiophenes hybrid-structured films for photoelectrochemical and photovoltaic applications. This paper discusses the hybrid film studies on regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) with 2D molybdenum disulfide (MoS2) for photoelectrochemical cell. The hybrid P3HT/MoS2 films deposited over indium tin oxide (ITO)-coated glass plate or n-type silicon substrates were characterized using FTIR, UV/vis, electrochemical and scanning electron microscopy (SEM) techniques. The optical measurements showed a higher absorption magnitude with low reflection properties of P3HT/MoS2 hybrid films revealing a superior photocurrent compared to both P3HT and MoS2 films. The P3HT/MoS2 hybrid-based photoelectrochemical cell yielded a short-circuit current (Isc) of 183.16μAṡcm-2, open-circuit voltage (Voc) of 0.92V, fill factor (FF) of 25% and power conversion efficiency (η) of 0.18% under the light intensity of 242Wṡm-2. The estimated power conversion efficiency and fill factor are comparable to organic-based photovoltaic devices.
Revealing the semiconductor–catalyst interface in buried platinum black silicon photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aguiar, Jeffery A.; Anderson, Nicholas C.; Neale, Nathan R.

2016-01-01

Nanoporous 'black' silicon semiconductors interfaced with buried platinum nanoparticle catalysts have exhibited stable activity for photoelectrochemical hydrogen evolution even after months of exposure to ambient conditions. The mechanism behind this stability has not been explained in detail, but is thought to involve a Pt/Si interface free from SiOx layer that would adversely affect interfacial charge transfer kinetics. In this paper, we resolve the chemical composition and structure of buried Pt/Si interfaces in black silicon photocathodes from a micron to sub-nanometer level using aberration corrected analytical scanning transmission electron microscopy. Through a controlled electrodeposition of copper on samples aged for onemore » month in ambient conditions, we demonstrate that the main active catalytic sites are the buried Pt nanoparticles located below the 400-800 nm thick nanoporous SiOx layer. Though hydrogen production performance degrades over 100 h under photoelectrochemical operating conditions, this burying strategy preserves an atomically clean catalyst/Si interface free of oxide or other phases under air exposure and provides an example of a potential method for stabilizing silicon photoelectrodes from oxidative degradation in photoelectrochemical applications.« less
Comparison of GaP nanowires grown from Au and Sn vapor-liquid-solid catalysts as photoelectrode materials

NASA Astrophysics Data System (ADS)

Lee, Sudarat; Wen, Wen; Cheek, Quintin; Maldonado, Stephen

2018-01-01

Gallium phosphide (GaP) nanowire film electrodes have been prepared via solid sublimation of GaP powder using both gold (Au) and tin (Sn) nanoparticles as the vapor-liquid-solid (VLS) catalysts on Si(1 1 1) and GaP(1 1 1)B substrates. The resultant GaP nanowires are compared and contrasted in terms of structures and photoactivity in photoelectrochemical half cells. Raman spectra implicated a difference in the surface condition of the two types of nanowires. Complete wet etching removal of metallic VLS catalysts from the as-prepared GaP nanowires was possible with Sn catalysts but not with Au catalysts. The photoresponses of both Sn- and Au-seeded GaP nanowire films were collected and examined under 100 mW cm-2 white light illumination. Au-seeded nanowire films exhibited strong n-type characteristics when measured in nonaqueous electrolyte with ferrocene/ferricenium as the redox species while Sn-seeded nanowires showed behavior consistent with degenerate n-type doping.
Modeling, simulation, and fabrication of a fully integrated, acid-stable, scalable solar-driven water-splitting system.

PubMed

Walczak, Karl; Chen, Yikai; Karp, Christoph; Beeman, Jeffrey W; Shaner, Matthew; Spurgeon, Joshua; Sharp, Ian D; Amashukeli, Xenia; West, William; Jin, Jian; Lewis, Nathan S; Xiang, Chengxiang

2015-02-01

A fully integrated solar-driven water-splitting system comprised of WO3 /FTO/p(+) n Si as the photoanode, Pt/TiO2 /Ti/n(+) p Si as the photocathode, and Nafion as the membrane separator, was simulated, assembled, operated in 1.0 M HClO4 , and evaluated for performance and safety characteristics under dual side illumination. A multi-physics model that accounted for the performance of the photoabsorbers and electrocatalysts, ion transport in the solution electrolyte, and gaseous product crossover was first used to define the optimal geometric design space for the system. The photoelectrodes and the membrane separators were then interconnected in a louvered design system configuration, for which the light-absorbing area and the solution-transport pathways were simultaneously optimized. The performance of the photocathode and the photoanode were separately evaluated in a traditional three-electrode photoelectrochemical cell configuration. The photocathode and photoanode were then assembled back-to-back in a tandem configuration to provide sufficient photovoltage to sustain solar-driven unassisted water-splitting. The current-voltage characteristics of the photoelectrodes showed that the low photocurrent density of the photoanode limited the overall solar-to-hydrogen (STH) conversion efficiency due to the large band gap of WO3 . A hydrogen-production rate of 0.17 mL hr(-1) and a STH conversion efficiency of 0.24 % was observed in a full cell configuration for >20 h with minimal product crossover in the fully operational, intrinsically safe, solar-driven water-splitting system. The solar-to-hydrogen conversion efficiency, ηSTH , calculated using the multiphysics numerical simulation was in excellent agreement with the experimental behavior of the system. The value of ηSTH was entirely limited by the performance of the photoelectrochemical assemblies employed in this study. The louvered design provides a robust platform for implementation of various types of photoelectrochemical assemblies, and can provide an approach to significantly higher solar conversion efficiencies as new and improved materials become available. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A dye-sensitized photoelectrochemical tandem cell for light driven hydrogen production from water

DOE PAGES

Sherman, Benjamin D.; Sheridan, Matthew V.; Wee, Kyung -Ryang; ...

2016-12-02

Here, tandem junction photoelectrochemical water-splitting devices, whereby two light absorbing electrodes targeting separate portions of the solar spectrum generate the voltage required to convert water to oxygen and hydrogen, enable much higher possible efficiencies than single absorber systems. We report here on the development of a tandem system consisting of a dye-sensitized photoelectrochemical cell (DSPEC) wired in series with a dye-sensitized solar cell (DSC). The DSPEC photoanode incorporates a tris(bipyridine)ruthenium(II)-type chromophore and molecular ruthenium based water oxidation catalyst. The DSPEC was tested with two more-red absorbing DSC variations, one utilizing N719 dye with an I 3 –/I – redox mediatormore » solution and the other D35 dye with a tris(bipyridine)cobalt ([Co(bpy) 3] 3+/2+) based mediator. The tandem configuration consisting of the DSPEC and D35/[Co(bpy) 3] 3+/2+ based DSC gave the best overall performance and demonstrated the production of H 2 from H 2O with the only energy input from simulated solar illumination.« less
Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Beibei; Yu, Hongtao; Quan, Xie, E-mail: quanxie@dlut.edu.cn

2014-11-15

Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowiremore » array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, such as solar energy harvest and photocatalytic pollution control.« less
Sunlight-Driven Hydrogen Formation by Membrane-Supported Photoelectrochemical Water Splitting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewis, Nathan S.

2014-03-26

This report describes the significant advances in the development of the polymer-supported photoelectrochemical water-splitting system that was proposed under DOE grant number DE-FG02-05ER15754. We developed Si microwire-array photoelectrodes, demonstrated control over the material and light-absorption properties of the microwire-array photoelectrodes, developed inexpensive processes for synthesizing the arrays, and doped the arrays p-type for use as photocathodes. We also developed techniques for depositing metal-nanoparticle catalysts of the hydrogen-evolution reaction (HER) on the wire arrays, investigated the stability and catalytic performance of the nanoparticles, and demonstrated that Ni-Mo alloys are promising earth-abundant catalysts of the HER. We also developed methods that allowmore » reuse of the single-crystalline Si substrates used for microwire growth and methods of embedding the microwire photocathodes in plastic to enable large-scale processing and deployment of the technology. Furthermore we developed techniques for controlling the structure of WO3 films, and demonstrated that structural control can improve the quantum yield of photoanodes. Thus, by the conclusion of this project, we demonstrated significant advances in the development of all components of a sunlight-driven membrane-supported photoelectrochemical water-splitting system. This final report provides descriptions of some of the scientific accomplishments that were achieved under the support of this project and also provides references to the peer-reviewed publications that resulted from this effort.« less
Synthesis and characterization of porous silicon gas sensors

NASA Astrophysics Data System (ADS)

abbas, Roaa A.; Alwan, Alwan M.; Abdulhamied, Zainab T.

2018-05-01

In this work, photo-electrochemical etching process of n-type Silicon of resistivity(10 Ω.cm) and (100) orientation, using two illumination sources IR and violet wavelength in HF acid have been used to produce PSi gas detection device. The fabrication process was carried out at a fixed etching current density of 25mA/cm2 and at different etching time (5, 10, 15 and 20) min and (8, 16, 24, and 30) min. Two configurations of gas sensor configuration planer and sandwich have been made and investigated. The morphological properties have been studied using SEM,the FTIR measurement show that the (Si-Hx) and (Si-O-Si) absorption peak were increases with increasing etching time,and Photoluminescence properties of PSi layer show decrease in the peak of PL peak toward the violet shift. The gas detection process is made on the CO2 gas at different operating temperature and fixed gas concentration. In the planner structure, the gas sensing was measured through, the change in the resistance readout as a function to the exposure time, while for sandwich structure J-V characteristic have been made to determine the sensitivity.
Large-Scale Fabrication of Silicon Nanowires for Solar Energy Applications.

PubMed

Zhang, Bingchang; Jie, Jiansheng; Zhang, Xiujuan; Ou, Xuemei; Zhang, Xiaohong

2017-10-11

The development of silicon (Si) materials during past decades has boosted up the prosperity of the modern semiconductor industry. In comparison with the bulk-Si materials, Si nanowires (SiNWs) possess superior structural, optical, and electrical properties and have attracted increasing attention in solar energy applications. To achieve the practical applications of SiNWs, both large-scale synthesis of SiNWs at low cost and rational design of energy conversion devices with high efficiency are the prerequisite. This review focuses on the recent progresses in large-scale production of SiNWs, as well as the construction of high-efficiency SiNW-based solar energy conversion devices, including photovoltaic devices and photo-electrochemical cells. Finally, the outlook and challenges in this emerging field are presented.
Luminescent Photoelectrochemical Cells. 5. Multiple Emission from Tellurium-Doped Cadmium Sulfide Photoelectrodes and Implications Regarding Excited-State Communication.

DTIC Science & Technology

1980-12-03

essentially invariant. Similar effects were observed for n-type, ZnO -based PECs and ascribed to a deficiency in the electron concentration needed for...California 92152 Dr. J. J. Auborn Dr. C. E. Mueller Bell Laboratories The Electrochemistry Branch Murray Hill, New Jersey 07974 Materials Division
Photoelectrochemical modulation of neuronal activity with free-standing coaxial silicon nanowires

NASA Astrophysics Data System (ADS)

Parameswaran, Ramya; Carvalho-de-Souza, João L.; Jiang, Yuanwen; Burke, Michael J.; Zimmerman, John F.; Koehler, Kelliann; Phillips, Andrew W.; Yi, Jaeseok; Adams, Erin J.; Bezanilla, Francisco; Tian, Bozhi

2018-02-01

Optical methods for modulating cellular behaviour are promising for both fundamental and clinical applications. However, most available methods are either mechanically invasive, require genetic manipulation of target cells or cannot provide subcellular specificity. Here, we address all these issues by showing optical neuromodulation with free-standing coaxial p-type/intrinsic/n-type silicon nanowires. We reveal the presence of atomic gold on the nanowire surfaces, likely due to gold diffusion during the material growth. To evaluate how surface gold impacts the photoelectrochemical properties of single nanowires, we used modified quartz pipettes from a patch clamp and recorded sustained cathodic photocurrents from single nanowires. We show that these currents can elicit action potentials in primary rat dorsal root ganglion neurons through a primarily atomic gold-enhanced photoelectrochemical process.

Mesoscale modeling of photoelectrochemical devices: light absorption and carrier collection in monolithic, tandem, Si|WO3 microwires.

PubMed

Fountaine, Katherine T; Atwater, Harry A

2014-10-20

We analyze mesoscale light absorption and carrier collection in a tandem junction photoelectrochemical device using electromagnetic simulations. The tandem device consists of silicon (E(g,Si) = 1.1 eV) and tungsten oxide (E(g,WO3) = 2.6 eV) as photocathode and photoanode materials, respectively. Specifically, we investigated Si microwires with lengths of 100 µm, and diameters of 2 µm, with a 7 µm pitch, covered vertically with 50 µm of WO3 with a thickness of 1 µm. Many geometrical variants of this prototypical tandem device were explored. For conditions of illumination with the AM 1.5G spectra, the nominal design resulted in a short circuit current density, J(SC), of 1 mA/cm(2), which is limited by the WO3 absorption. Geometrical optimization of photoanode and photocathode shape and contact material selection, enabled a three-fold increase in short circuit current density relative to the initial design via enhanced WO3 light absorption. These findings validate the usefulness of a mesoscale analysis for ascertaining optimum optoelectronic performance in photoelectrochemical devices.
Energy-Conversion Properties of Vapor-Liquid-Solid-Grown Silicon Wire-Array Photocathodes

NASA Astrophysics Data System (ADS)

Boettcher, Shannon W.; Spurgeon, Joshua M.; Putnam, Morgan C.; Warren, Emily L.; Turner-Evans, Daniel B.; Kelzenberg, Michael D.; Maiolo, James R.; Atwater, Harry A.; Lewis, Nathan S.

2010-01-01

Silicon wire arrays, though attractive materials for use in photovoltaics and as photocathodes for hydrogen generation, have to date exhibited poor performance. Using a copper-catalyzed, vapor-liquid-solid-growth process, SiCl4 and BCl3 were used to grow ordered arrays of crystalline p-type silicon (p-Si) microwires on p+-Si(111) substrates. When these wire arrays were used as photocathodes in contact with an aqueous methyl viologen2+/+ electrolyte, energy-conversion efficiencies of up to 3% were observed for monochromatic 808-nanometer light at fluxes comparable to solar illumination, despite an external quantum yield at short circuit of only 0.2. Internal quantum yields were at least 0.7, demonstrating that the measured photocurrents were limited by light absorption in the wire arrays, which filled only 4% of the incident optical plane in our test devices. The inherent performance of these wires thus conceptually allows the development of efficient photovoltaic and photoelectrochemical energy-conversion devices based on a radial junction platform.
Energy-conversion properties of vapor-liquid-solid-grown silicon wire-array photocathodes.

PubMed

Boettcher, Shannon W; Spurgeon, Joshua M; Putnam, Morgan C; Warren, Emily L; Turner-Evans, Daniel B; Kelzenberg, Michael D; Maiolo, James R; Atwater, Harry A; Lewis, Nathan S

2010-01-08

Silicon wire arrays, though attractive materials for use in photovoltaics and as photocathodes for hydrogen generation, have to date exhibited poor performance. Using a copper-catalyzed, vapor-liquid-solid-growth process, SiCl4 and BCl3 were used to grow ordered arrays of crystalline p-type silicon (p-Si) microwires on p+-Si(111) substrates. When these wire arrays were used as photocathodes in contact with an aqueous methyl viologen(2+/+) electrolyte, energy-conversion efficiencies of up to 3% were observed for monochromatic 808-nanometer light at fluxes comparable to solar illumination, despite an external quantum yield at short circuit of only 0.2. Internal quantum yields were at least 0.7, demonstrating that the measured photocurrents were limited by light absorption in the wire arrays, which filled only 4% of the incident optical plane in our test devices. The inherent performance of these wires thus conceptually allows the development of efficient photovoltaic and photoelectrochemical energy-conversion devices based on a radial junction platform.
Hot Hole Collection and Photoelectrochemical CO2 Reduction with Plasmonic Au/p-GaN Photocathodes.

PubMed

DuChene, Joseph S; Tagliabue, Giulia; Welch, Alex J; Cheng, Wen-Hui; Atwater, Harry A

2018-04-11

Harvesting nonequilibrium hot carriers from plasmonic-metal nanostructures offers unique opportunities for driving photochemical reactions at the nanoscale. Despite numerous examples of hot electron-driven processes, the realization of plasmonic systems capable of harvesting hot holes from metal nanostructures has eluded the nascent field of plasmonic photocatalysis. Here, we fabricate gold/p-type gallium nitride (Au/p-GaN) Schottky junctions tailored for photoelectrochemical studies of plasmon-induced hot-hole capture and conversion. Despite the presence of an interfacial Schottky barrier to hot-hole injection of more than 1 eV across the Au/p-GaN heterojunction, plasmonic Au/p-GaN photocathodes exhibit photoelectrochemical properties consistent with the injection of hot holes from Au nanoparticles into p-GaN upon plasmon excitation. The photocurrent action spectrum of the plasmonic photocathodes faithfully follows the surface plasmon resonance absorption spectrum of the Au nanoparticles and open-circuit voltage studies demonstrate a sustained photovoltage during plasmon excitation. Comparison with Ohmic Au/p-NiO heterojunctions confirms that the vast majority of hot holes generated via interband transitions in Au are sufficiently hot to inject above the 1.1 eV interfacial Schottky barrier at the Au/p-GaN heterojunction. We further investigated plasmon-driven photoelectrochemical CO 2 reduction with the Au/p-GaN photocathodes and observed improved selectivity for CO production over H 2 evolution in aqueous electrolytes. Taken together, our results offer experimental validation of photoexcited hot holes more than 1 eV below the Au Fermi level and demonstrate a photoelectrochemical platform for harvesting hot carriers to drive solar-to-fuel energy conversion.
Interpretation of quantum yields exceeding unity in photoelectrochemical systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szklarczyk, M.; Allen, R.E.

1986-10-20

In photoelectrochemical systems involving light shining on a semiconductor interfaced with an electrolyte, the quantum yield as a function of photon frequency ..nu.. is observed to exhibit a peak at h..nu..roughly-equal2E/sub g/, where E/sub g/ is the band gap of the semiconductor. The maximum in this peak is sometimes found to exceed unity. We provide an interpretation involving surface states and inelastic electron-electron scattering. The theory indicates that the effect should be observable for p-type semiconductors, but not n-type.
The Chemistry of MoS2 and Related Compounds and Their Applications in Electrocatalysis and Photoelectrochemistry

NASA Astrophysics Data System (ADS)

Ding, Qi

The increasing energy demand in our society has stimulated intensive research in the development of sustainable and renewable energy sources to lessen our strong dependence on fossil fuels. Hydrogen is a clean, storable, and high-energy density energy carrier, and is a promising sustainable solution to achieve an environmentally friendly fuel economy. Electrochemical and solar-driven photoelectrochemical water splitting is regarded as one of the most promising approaches to utilize renewable energy to product hydrogen fuel, yet Pt remains the best electrocatalyst for hydrogen evolution reaction (HER), the high cost of which ultimately limit the scalability of such technologies. Layered transition metal dichalcogenides (TMDCs) is a family of compounds that has attracted widespread attention due to their broad range of applications in electronics, optoelectronics, sensing, energy storage, and catalysis. My research has primarily focused on understanding the chemistry of MoS2 and related compounds, and developing rational approaches to enable these materials for efficient electrocatalytic and photoelectrochemical (PEC) hydrogen evolution. We demonstrated highly efficient and robust photocathodes based on heterostructures of chemically exfoliated metallic 1T-MoS2 and planar p-type Si for PEC-HER. Photocurrents up to 17.6 mA/cm2 at 0 V vs reversible hydrogen electrode (RHE) were achieved under simulated 1 sun irradiation, and excellent stability was demonstrated over long-term operation. Building upon the 1T-MoS2 groundwork, amorphous ternary compounds MoQxCly (Q = S, Se) were then developed as excellent catalysts for HER. The preparation of MoQxCly requires much lower temperature and easier fabrication, yet the PEC performance of MoSxCly-based photocathode is even better than 1T-MoS2-based photocathode. Moreover, when MoSxCly is incorporated with n+pp+ Si micropyramids (MPs), we demonstrate the highest current density ever reported for Si-based photocathodes. Furthermore, to fully harness the potentials of MoS2 and utilize it for a broader range of applications, we demonstrate covalent functionalization on the basal plane of 2H-MoS2 via thiol conjugation, despite the general belief that the basal plane is too inert for functionalization. We correlate the degree of functionalization to the amount of sulfur vacancies on MoS2 basal plane, and successfully demonstrated the preparation of MoS2-PbSe quantum dot heterostructures using a bi-functional dithiol linker molecule.
Two-step electrodeposition to fabricate the p-n heterojunction of a Cu2O/BiVO4 photoanode for the enhancement of photoelectrochemical water splitting.

PubMed

Bai, Shouli; Liu, Jingchao; Cui, Meng; Luo, Ruixian; He, Jing; Chen, Aifan

2018-05-15

A Cu2O/BiVO4 p-n heterojunction based photoanode in photoelectrochemical (PEC) water splitting is fabricated by a two-step electrodeposition method on an FTO substrate followed by annealing treatment. The structures and properties of the samples are characterized by XRD, FESEM, HRTEM, XPS and UV-visible spectra. The photoelectrochemical activity of the photoanode in water oxidation has been investigated and measured in a three electrode quartz cell system; the obtained maximum photocurrent density of 1.72 mA cm-2 at 1.23 V vs. RHE is 4.5 times higher than that of pristine BiVO4 thin films (∼0.38 mA cm-2). The heterojunction based photoanode also exhibits a tremendous cathodic shift of the onset potential (∼420 mV) and enhancement in the IPCE value by more than 4-fold. The enhanced photoelectrochemical properties of the Cu2O/BiVO4 photoelectrode are attributed to the efficient separation of the photoexcited electron-hole pairs caused by the inner electronic field (IEF) of the p-n heterojunction.
Metal-free hybrids of graphitic carbon nitride and nanodiamonds for photoelectrochemical and photocatalytic applications.

PubMed

Zhou, Li; Zhang, Huayang; Guo, Xiaochen; Sun, Hongqi; Liu, Shaomin; Tade, Moses O; Wang, Shaobin

2017-05-01

Graphitic carbon nitride (g-C 3 N 4 ) has been considered as a metal-free, cost-effective, eco-friendly and efficient catalyst for various photoelectrochemical applications. However, compared to conventional metal-based photocatalysts, its photocatalytic activity is still low because of the low mobility of carriers restricted by the polymer nature. Herein, a series of hybrids of g-C 3 N 4 (GCN) and nanodiamonds (NDs) were synthesized using a solvothermal method. The photoelectrochemical performance and photocatalytic efficiency of the GCN/NDs were investigated by means of the generation of photocurrent and photodegradation of methylene blue (MB) solutions under UV-visible light irradiations. In this study, the sample of GCN/ND-33% derived from 0.1g GCN and 0.05g NDs displayed the highest photocatalytic activity and the strongest photocurrent density. The mechanism of enhanced photoelectrochemical and photocatalytic performances was also discussed. Copyright © 2017 Elsevier Inc. All rights reserved.
Band structure engineering of TiO2 nanowires by n-p codoping for enhanced visible-light photoelectrochemical water-splitting.

PubMed

Zhang, Daoyu; Yang, Minnan

2013-11-14

The advantages of one-dimensional nanostructures, such as excellent charge separation and charge transport, low charge carrier recombination losses and so on, render them the photocatalysts of choice for many applications that exploit solar energy. In this work, based on very recently synthesized ultrathin anatase TiO2 nanowires, we explore the possibility of these wires as photocatalysts for photoelectrochemical water-splitting via the mono-doping (C, N, V, and Cr) and n-p codoping (C&V, C&Cr, N&V, and N&Cr) schemes. Our first-principles calculations predict that the C&Cr and C&V codoped ANWs may be strong candidates for photoelectrochemical water-splitting, because they have a substantially reduced band gap of 2.49 eV, appropriate band edge positions, no carrier recombination centers, and enhanced optical absorption in the visible light region.
Resistive switching behaviors of Au/pentacene/Si-nanowire arrays/heavily doped n-type Si devices for memory applications

NASA Astrophysics Data System (ADS)

Tsao, Hou-Yen; Lin, Yow-Jon

2014-02-01

The fabrication of memory devices based on the Au/pentacene/heavily doped n-type Si (n+-Si), Au/pentacene/Si nanowires (SiNWs)/n+-Si, and Au/pentacene/H2O2-treated SiNWs/n+-Si structures and their resistive switching characteristics were reported. A pentacene memory structure using SiNW arrays as charge storage nodes was demonstrated. The Au/pentacene/SiNWs/n+-Si devices show hysteresis behavior. H2O2 treatment may lead to the hysteresis degradation. However, no hysteresis-type current-voltage characteristics were observed for Au/pentacene/n+-Si devices, indicating that the resistive switching characteristic is sensitive to SiNWs and the charge trapping effect originates from SiNWs. The concept of nanowires within the organic layer opens a promising direction for organic memory devices.
Integrated MoSe2 with n+p-Si photocathodes for solar water splitting with high efficiency and stability

NASA Astrophysics Data System (ADS)

Huang, Guanping; Mao, Jie; Fan, Ronglei; Yin, Zhihao; Wu, Xi; Jie, Jiansheng; Kang, Zhenhui; Shen, Mingrong

2018-01-01

Many earth-abundant transition metal dichalcogenides (TMDs) have been employed as catalysts for H2 evolution reaction (HER); however, their impactful integration onto photocathodes for photoelectrochemical (PEC) HER is less developed. In this study, we directly sputtered a MoSe2 catalyst onto an n+p-Si photocathode for efficient and stable PEC-HER. An onset potential of 0.4 V vs. RHE, a saturated photocurrent of 29.3 mA/cm2, a fill factor of 0.32, and an energy conversion efficiency of 3.8% were obtained under 100 mA/cm2 Xe lamp illumination. Such superior PEC properties were ascribed to the nearly vertically standing two dimensional MoSe2 rough surface layer and the sharp interface between Si and MoSe2 with small charge transfer resistance. The balance between the reflectivity of the electrode surface and the absorptivity of MoSe2 was also discussed. In addition, the MoSe2 layer can protect the n+p-Si photocathode with a 120 h stability due to its initial growth on Si with high flatness and compactness. This study provides a path to the effective and scalable growth of TMDs onto the Si photocathode aiming for high efficiency and stability.
Critical Research for Cost-Effective Photoelectrochemical Production of Hydrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Liwei; Deng, Xunming; Abken, Anka

2014-10-29

The objective of this project is to develop critical technologies required for cost-effective production of hydrogen from sunlight and water using a-Si triple junction solar cell based photo-electrodes. In this project, Midwest Optoelectronics, LLC (MWOE) and its collaborating organizations utilize triple junction a-Si thin film solar cells as the core element to fabricate photoelectrochemical (PEC) cells. Triple junction a-Si/a-SiGe/a-SiGe solar cell is an ideal material for making cost-effective PEC system which uses sun light to split water and generate hydrogen. It has the following key features: 1) It has an open circuit voltage (Voc ) of ~ 2.3V and hasmore » an operating voltage around 1.6V. This is ideal for water splitting. There is no need to add a bias voltage or to inter-connect more than one solar cell. 2) It is made by depositing a-Si/a-SiGe/aSi-Ge thin films on a conducting stainless steel substrate which can serve as an electrode. When we immerse the triple junction solar cells in an electrolyte and illuminate it under sunlight, the voltage is large enough to split the water, generating oxygen at the Si solar cell side (for SS/n-i-p/sunlight structure) and hydrogen at the back, which is stainless steel side. There is no need to use a counter electrode or to make any wire connection. 3) It is being produced in large rolls of 3ft wide and up to 5000 ft long stainless steel web in a 25MW roll-to-roll production machine. Therefore it can be produced at a very low cost. After several years of research with many different kinds of material, we have developed promising transparent, conducting and corrosion resistant (TCCR) coating material; we carried out extensive research on oxygen and hydrogen generation catalysts, developed methods to make PEC electrode from production-grade a-Si solar cells; we have designed and tested various PEC module cases and carried out extensive outdoor testing; we were able to obtain a solar to hydrogen conversion efficiency (STH) about 5.7% and a running time about 480 hrs, which are very promising results; we have also completed a techno-economic analysis of our PEC system, which indicates that a projected hydrogen generation cost of $2/gge is achievable with a 50 Ton-per-day (TPD) scale under certain conditions.« less
Layered transition metal thiophosphates /MPX3/ as photoelectrodes in photoelectrochemical cells

NASA Technical Reports Server (NTRS)

Byvik, C. E.; Smith, B. T.; Reichman, B.

1982-01-01

Layered crystals of the transition metal thiophosphates were synthesized and characterized for use as photoelectrodes in photoelectrochemical cells. Crystals incorporating tin and manganese show n-type response while those with iron and nickel show p-type response. These materials have a measured indirect bandgap of about 2.1 eV. They show ability to photoelectrolyze water in acid solutions with onset potentials which change in a Nernstian way as the PH of the solution changes. The onset potential is near zero volts versus a saturated calomel electrode at pH 2. At n-type crystals, oxygen could be evolved upon irradiation at underpotentials of 850 mV and at p-type crystals, hydrogen could be evolved at underpotentials of 400 mV, indicating a net gain in energy conversion. All crystals were unstable in basic solution. Liquid junction photovoltaic cells in iodide-triiodide acid solution using these layered materials were also constructed and found to have low efficiences.
Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation.

PubMed

Liu, Shu-Yen; Sheu, J K; Lee, M L; Lin, Yu-Chuan; Tu, S J; Huang, F W; Lai, W C

2012-03-12

In this study, we demonstrated photoelectrochemical (PEC) hydrogen generation using p-GaN photoelectrodes associated with immersed finger-type indium tin oxide (IF-ITO) ohmic contacts. The IF-ITO/p-GaN photoelectrode scheme exhibits higher photocurrent and gas generation rate compared with p-GaN photoelectrodes without IF-ITO ohmic contacts. In addition, the critical external bias for detectable hydrogen generation can be effectively reduced by the use of IF-ITO ohmic contacts. This finding can be attributed to the greatly uniform distribution of the IF-ITO/p-GaN photoelectrode applied fields over the whole working area. As a result, the collection efficiency of photo-generated holes by electrode contacts is higher than that of p-GaN photoelectrodes without IF-ITO contacts. Microscopy revealed a tiny change on the p-GaN surfaces before and after hydrogen generation. In contrast, photoelectrodes composed of n-GaN have a short lifetime due to n-GaN corrosion during hydrogen generation. Findings of this study indicate that the ITO finger contacts on p-GaN layer is a potential candidate as photoelectrodes for PEC hydrogen generation.
Photorechargeable High Voltage Redox Battery Enabled by Ta3 N5 and GaN/Si Dual-Photoelectrode.

PubMed

Cheng, Qingmei; Fan, Weiqiang; He, Yumin; Ma, Peiyan; Vanka, Srinivas; Fan, Shizhao; Mi, Zetian; Wang, Dunwei

2017-07-01

Solar rechargeable battery combines the advantages of photoelectrochemical devices and batteries and has emerged as an attractive alternative to artificial photosynthesis for large-scale solar energy harvesting and storage. Due to the low photovoltages by the photoelectrodes, however, most previous demonstrations of unassisted photocharge have been realized on systems with low open circuit potentials (<0.8 V). In response to this critical challenge, here it is shown that the combined photovoltages exceeding 1.4 V can be obtained using a Ta 3 N 5 nanotube photoanode and a GaN nanowire/Si photocathode with high photocurrents (>5 mA cm -2 ). The photoelectrode system makes it possible to operate a 1.2 V alkaline anthraquinone/ferrocyanide redox battery with a high ideal solar-to-chemical conversion efficiency of 3.0% without externally applied potentials. Importantly, the photocharged battery is successfully discharged with a high voltage output. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Nanostructured TaON/Ta3N5 as a highly efficient type-II heterojunction photoanode for photoelectrochemical water splitting.

PubMed

Pei, Lang; Wang, Hongxu; Wang, Xiaohui; Xu, Zhe; Yan, Shicheng; Zou, Zhigang

2018-06-20

Enhancing the charge separation by a semiconductor heterojunction is greatly promising and challenging for photoelectrochemical (PEC) water splitting. Here, we report for the first time the design and fabrication of a TaON/Ta3N5 heterojunction photoanode, in which the electrode Ta3N5 is the primary light absorber and TaON acts as an electron conductor. By combining the merits of the substantial light harvesting of Ta3N5 with the excellent charge transport capability of TaON, the TaON/Ta3N5 heterojunction photoanode, without any co-catalysts, shows a 350 mV negative shift of photocurrent onset potential to 0.65 V versus the reversible hydrogen electrode (RHE) compared to that of the Ta3N5 photoanode. The design and fabrication scheme can be readily extended to other (oxy)nitride semiconductors for heterojunction construction.
A photovoltaic self-powered gas sensor based on a single-walled carbon nanotube/Si heterojunction.

PubMed

Liu, L; Li, G H; Wang, Y; Wang, Y Y; Li, T; Zhang, T; Qin, S J

2017-12-07

We present a novel photovoltaic self-powered gas sensor based on a p-type single-walled carbon nanotube (SWNT) and n-type silicon (n-Si) heterojunction. The energy from visible light suffices to drive the device owing to a built-in electric field (BEF) induced by the differences between the Fermi levels of SWNTs and n-Si.
Silicon Nitride for Direct Water-Splitting and Corrosion Mitigation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Head, J.; Turner, J.A.

2006-01-01

Todays fossil fuels are becoming harder to obtain, creating pollution problems, and posing hazards to people’s health. One alternative to fossil fuels is hydrogen, capable of serving as a clean and efficient energy carrier. Certain semiconductors are able to harness the energy of photons and direct it into water electrolysis in a process known as photoelectrochemical water splitting. Triple junction devices integrate three semiconductors of different band gaps resulting in a monolithic material that absorbs over a broader spectrum. Amorphous silicon (a-Si) is one such material that, when stacked in tandem, possesses water-splitting capabilities. Even though a-Si is capable ofmore » splitting water, it is an unstable material in solution and therefore requires a coating to protect the surface from corrosion. A stable, transparent material that has the potential for corrosion protection is silicon nitride. In this study, silicon nitride thin films were grown using DC magnetron sputtering with varying amounts of argon and nitrogen added to the system. X-ray diffraction indicated amorphous silicon nitride films. Current as a function of potential was determined from cyclic voltammetry measurements. Mott-Schottky analysis showed n-type behavior with absorption and transmission measurements indicated variation in flatband potentials. Variation in band gap values ranging from 1.90 to 4.0 eV. Corrosion measurements reveal that the silicon nitride samples exhibit both p-type and n-type behavior. Photocurrent over a range of potentials was greater in samples that were submerged in acidic electrolyte. Silicon nitride shows good stability in acidic, neutral, and basic solutions, indicative of a good material for corrosion mitigation.« less
MoSi2-Base Composites

NASA Technical Reports Server (NTRS)

Hebsur, Mohan G.

2003-01-01

Addition of 30 to 50 vol% of Si3N4 particulate to MoSi2 eliminated its low temperature catastrophic failure, improved room temperature fracture toughness and the creep resistance. The hybrid composite SCS-6/MoSi2-Si3N4 did not show any matrix cracking and exhibited excellent mechanical and environmental properties. Hi-Nicalon continuous fiber reinforced MoSi2-Si3N4 also showed good strength and toughness. A new MoSi2-base composite containing in-situ whisker-type (Beta)Si3N4 grains in a MoSi2 matrix is also described.
Solar energy conversion in a photoelectrochemical biofuel cell.

PubMed

Hambourger, Michael; Kodis, Gerdenis; Vaughn, Michael D; Moore, Gary F; Gust, Devens; Moore, Ana L; Moore, Thomas A

2009-12-07

A photoelectrochemical biofuel cell has been developed which incorporates aspects of both an enzymatic biofuel cell and a dye-sensitized solar cell. Photon absorption at a porphyrin-sensitized n-type semiconductor electrode gives rise to a charge-separated state. Electrons and holes are shuttled to appropriate cathodic and anodic catalysts, respectively, allowing the production of electricity, or a reduced fuel, via the photochemical oxidation of a biomass-derived substrate. The operation of this device is reviewed. The use of alternate anodic redox mediators provides insight regarding loss mechanisms in the device. Design strategies for enhanced performance are discussed.

Bio-inspired co-catalysts bonded to a silicon photocathode for solar hydrogen evolution

NASA Astrophysics Data System (ADS)

Hou, Yidong; Abrams, Billie L.; Vesborg, Peter C. K.; Bjørketun, Mårten E.; Herbst, Konrad; Bech, Lone; Seger, Brian; Pedersen, Thomas; Hansen, Ole; Rossmeisl, Jan; Dahl, Søren; Nørskov, Jens K.; Chorkendorff, Ib

2011-10-01

The production of fuels directly or indirectly from sunlight represents one of the major challenges to the development of a sustainable energy system. Hydrogen is the simplest fuel to produce and while platinum and other noble metals are efficient catalysts for photoelectrochemical hydrogen evolution, earth-abundant alternatives are needed for largescale use. We show that bio-inspired molecular clusters based on molybdenum sulfides and tungsten sulfides mimic nature's enzymes for hydrogen evolution, molybdenum sulfides evolve hydrogen at a slightly higher overpotential than platinum when deposited on various supports. It will be demonstrated how this overpotential can be eliminated by depositing the same type of hydrogen evolution catalyst on p-type Si which can harvest the red part of the solar spectrum. Such a system could constitute the cathode part of a tandem dream device where the red part of the spectrum is utilized for hydrogen evolution while the blue part is reserved for the more difficult oxygen evolution. The samples have been illuminated with a simulated red part of the solar spectrum i.e. long wavelength (" > 620 nm) part of simulated AM 1.5G radiation. The current densities at the reversible potential match the requirement of a photoelectrochemical hydrogen production system with a solar-to-hydrogen efficiency in excess of 10%. The experimental observations are supported by DFT calculations of the Mo3S4 cluster adsorbed on the hydrogen-terminated silicon surface providing insights into the nature of the active site.
Z-Scheme NiTiO 3 /g-C 3 N 4 Heterojunctions with Enhanced Photoelectrochemical and Photocatalytic Performances under Visible LED Light Irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Zhenyu; Zeng, Xiaoqiao; Li, Kai

Direct Z-scheme NiTiO3/g-C3N4 heterojunctions were successfully assembled by using simple calcination method and the photoelectrochemical and photocatalytic performance were investigated by light emitting diode (LED). The photoanode composed by the heterojunction with about 50 wt% NiTiO3 content exhibits the best photoelectrochemical activity with photoconversion efficiency up to 0.066%, which is 4.4 and 3.13 times larger than NiTiO3 or g-C3N4. The remarkably enhanced photoelectrochemical and photocatalytic activity of the heterojunction can be due to the efficiently photogenerated electron-hole separation by a Z-scheme mechanism.
Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Young Mi; Jung, Min-Sang; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr, E-mail: mcjung@oist.jp

2015-08-15

Using scanning electron microscopy (SEM) and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates and with various power conditions of TaN and Si targets. Three types of embedded micro-clusters with the chemical states of pure Si, SiO{sub x}-capped Si, and SiO{sub 2}-capped Si were observed and analyzed using SEM and Si 2p and Ta 4f core-level spectra were derived. Their different resistivities are presumably due to the different chemical states and densities of Si-based micro-clusters.
H2 evolution at Si-based metal-insulator-semiconductor photoelectrodes enhanced by inversion channel charge collection and H spillover.

PubMed

Esposito, Daniel V; Levin, Igor; Moffat, Thomas P; Talin, A Alec

2013-06-01

Photoelectrochemical (PEC) water splitting represents a promising route for renewable production of hydrogen, but trade-offs between photoelectrode stability and efficiency have greatly limited the performance of PEC devices. In this work, we employ a metal-insulator-semiconductor (MIS) photoelectrode architecture that allows for stable and efficient water splitting using narrow bandgap semiconductors. Substantial improvement in the performance of Si-based MIS photocathodes is demonstrated through a combination of a high-quality thermal SiO2 layer and the use of bilayer metal catalysts. Scanning probe techniques were used to simultaneously map the photovoltaic and catalytic properties of the MIS surface and reveal the spillover-assisted evolution of hydrogen off the SiO2 surface and lateral photovoltage driven minority carrier transport over distances that can exceed 2 cm. The latter finding is explained by the photo- and electrolyte-induced formation of an inversion channel immediately beneath the SiO2/Si interface. These findings have important implications for further development of MIS photoelectrodes and offer the possibility of highly efficient PEC water splitting.
Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Chen, Hong-Wei; Lee, Hsin-Ying

2003-06-01

Using a photoelectrochemical method involving a He-Cd laser, Ga2O3 oxide layers were directly grown on n-type GaN. We demonstrated the performance of the resultant metal-oxide-semiconductor devices based on the grown Ga2O3 layer. An extremely low reverse leakage current of 200 pA was achieved when devices operated at -20 V. Furthermore, high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively, were obtained. Using a photoassisted current-voltage method, a low interface state density of 2.53×1011 cm-2 eV-1 was estimated. The varactor devices permit formation of inversion layers, so that they may be applied for the fabrication of metal-oxide-semiconductor field-effect transistors.
Integrating Semiconducting Catalyst of ReS2 Nanosheets into P-silicon Photocathode toward Enhanced Solar Water Reduction.

PubMed

Zhao, Heng; Dai, Zhengyi; Xu, Xiaoyong; Pan, Jing; Hu, Jingguo

2018-06-22

Loading the electro-catalysts at the semiconductor-electrolyte interface is one of promising strategies to develop photoelectrochemical (PEC) water splitting cells. However, the assembly of compatible and synergistic heterojunction between the semiconductor and the selected catalyst remains challenging. Here, we report a hierarchical p-Si/ReS2 heterojunction photocathode fabricated through uniform growth vertically standing ReS2 nanosheets (NSs) on planar p-Si substrate for solar-driven hydrogen evolution reaction (HER). The laden ReS2 NSs not only serve as a high-activity HER catalyst but also render a suitable electronic band coupled with p-Si into a Ⅱ-type heterojunction, which facilitates the photo-induced charge production, separation and utilization. As a result, the assembled p-Si/ReS2 photocathode exhibits a 23-fold-increased photocurrent density at 0 VRHE and a 35-fold-enhanced photoconversion efﬁciency compared to pure p-Si counterpart. The bifunctional ReS2 as catalyst and semiconductor enables multi effects in improving light harvesting, charge separation and catalytic kinetics, highlighting the potential of semiconducting catalysts integrated into solar water splitting devices.
Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

DOE PAGES

Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; ...

2015-11-18

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In 2O 3 and/or Ga 2O 3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.
Bio-inspired dewetted surfaces based on SiC/Si interlocked structures for enhanced-underwater stability and regenerative-drag reduction capability

PubMed Central

Lee, By Junghan; Zhang, Zhuo; Baek, Seunghyun; Kim, Sangkuk; Kim, Donghyung; Yong, Kijung

2016-01-01

Drag reduction has become a serious issue in recent years in terms of energy conservation and environmental protection. Among diverse approaches for drag reduction, superhydrophobic surfaces have been mainly researched due to their high drag reducing efficiency. However, due to limited lifetime of plastron (i.e., air pockets) on superhydrophobic surfaces in underwater, the instability of dewetted surfaces has been a sticking point for practical applications. This work presents a breakthrough in improving the underwater stability of superhydrophobic surfaces by optimizing nanoscale surface structures using SiC/Si interlocked structures. These structures have an unequaled stability of underwater superhydrophobicity and enhance drag reduction capabilities,with a lifetime of plastron over 18 days and maximum velocity reduction ratio of 56%. Furthermore, through photoelectrochemical water splitting on a hierarchical SiC/Si nanostructure surface, the limited lifetime problem of air pockets was overcome by refilling the escaping gas layer, which also provides continuous drag reduction effects. PMID:27095674
Surface modifications of chalcopyrite CuInS2 thin films for photochatodes in photoelectrochemical water splitting under sunlight irradiation

NASA Astrophysics Data System (ADS)

Gunawan; Haris, A.; Widiyandari, H.; Septina, W.; Ikeda, S.

2017-02-01

Copper chalcopyrite semiconductors include a wide range of compounds that are of interest for photoelectrochemical water splitting which enables them to be used as photochatodes for H2 generation. Among them, CuInS2 is one of the most important materials due to its optimum band gap energy for sunlight absorption. In the present study, we investigated the application of CuInS2 fabricated by electrodeposition as photochatodes for water splitting. Thin film of CuInS2 chalcopyrite was formed on Mo-coated glass substrate by stacked electrodeposition of copper and indium followed by sulfurization under H2S flow. The films worked as a H2 liberation electrode under cathodic polarization from a solution containing Na2SO4 after loading Pt deposits on the film. Introduction of an n-type CdS layer by chemical bath deposition on the CuInS2 surface before the Pt loading resulted appreciable improvements of H2 liberation efficiency and a higher photocurrent onset potential. Moreover, the use of In2S3 layer as an alternative n-type layer to the CdS significantly improved the H2 liberation performance: the CuInS2 film modified with In2S3 and Pt deposits worked as an efficient photocathode for photoelectrochemical water splitting.
Photoelectrochemical processes in organic semiconductor: Ambipolar perylene diimide thin film

NASA Astrophysics Data System (ADS)

Kim, Jung Yong; Chung, In Jae

2018-03-01

A thin film of N,N‧-dioctadecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C18) is spin-coated on indium tin oxide (ITO) glass. Using the PTCDI-C18/ITO electrode, we fabricate a photoelectrochemical cell with the ITO/PTCDI-C18/Redox Electrolyte/Pt configuration. The electrochemical properties of this device are investigated as a function of hydroquinone (HQ) concentration, bias voltage, and wavelength of light. Anodic photocurrent is observed at V ≥ -0.2 V vs. Ag/AgCl, indicating that the PTCDI-C18 film acts as an n-type semiconductor as usual. However, when benzoquinone (BQ) is inserted into the electrolyte system instead of HQ, cathodic photocurrent is observed at V ≤ 0.0 V, displaying that PTCDI-C18 abnormally serves as a p-type semiconductor. Hence the overall results reveal that the PTCDI-C18 film can be an ambipolar functional semiconductor depending on the redox couple in the appropriate voltage.
Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

PubMed

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-08-24

The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.
Epitaxial lift-off of electrodeposited single-crystal gold foils for flexible electronics

NASA Astrophysics Data System (ADS)

Mahenderkar, Naveen K.; Chen, Qingzhi; Liu, Ying-Chau; Duchild, Alexander R.; Hofheins, Seth; Chason, Eric; Switzer, Jay A.

2017-03-01

We introduce a simple and inexpensive procedure for epitaxial lift-off of wafer-size flexible and transparent foils of single-crystal gold using silicon as a template. Lateral electrochemical undergrowth of a sacrificial SiOx layer was achieved by photoelectrochemically oxidizing silicon under light irradiation. A 28-nanometer-thick gold foil with a sheet resistance of 7 ohms per square showed only a 4% increase in resistance after 4000 bending cycles. A flexible organic light-emitting diode based on tris(bipyridyl)ruthenium(II) that was spin-coated on a foil exploited the transmittance and flexibility of the gold foil. Cuprous oxide as an inorganic semiconductor that was epitaxially electrodeposited onto the gold foils exhibited a diode quality factor n of 1.6 (where n = 1.0 for an ideal diode), compared with a value of 3.1 for a polycrystalline deposit. Zinc oxide nanowires electrodeposited epitaxially on a gold foil also showed flexibility, with the nanowires intact up to 500 bending cycles.
Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

NASA Technical Reports Server (NTRS)

Das, Kalyan; Hall, Harvey

1999-01-01

Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.
Wire Array Solar Cells: Fabrication and Photoelectrochemical Studies

NASA Astrophysics Data System (ADS)

Spurgeon, Joshua Michael

Despite demand for clean energy to reduce our addiction to fossil fuels, the price of these technologies relative to oil and coal has prevented their widespread implementation. Solar energy has enormous potential as a carbon-free resource but is several times the cost of coal-produced electricity, largely because photovoltaics of practical efficiency require high-quality, pure semiconductor materials. To produce current in a planar junction solar cell, an electron or hole generated deep within the material must travel all the way to the junction without recombining. Radial junction, wire array solar cells, however, have the potential to decouple the directions of light absorption and charge-carrier collection so that a semiconductor with a minority-carrier diffusion length shorter than its absorption depth (i.e., a lower quality, potentially cheaper material) can effectively produce current. The axial dimension of the wires is long enough for sufficient optical absorption while the charge-carriers are collected along the shorter radial dimension in a massively parallel array. This thesis explores the wire array solar cell design by developing potentially low-cost fabrication methods and investigating the energy-conversion properties of the arrays in photoelectrochemical cells. The concept was initially investigated with Cd(Se, Te) rod arrays; however, Si was the primary focus of wire array research because its semiconductor properties make low-quality Si an ideal candidate for improvement in a radial geometry. Fabrication routes for Si wire arrays were explored, including the vapor-liquid-solid growth of wires using SiCl4. Uniform, vertically aligned Si wires were demonstrated in a process that permits control of the wire radius, length, and spacing. A technique was developed to transfer these wire arrays into a low-cost, flexible polymer film, and grow multiple subsequent arrays using a single Si(111) substrate. Photoelectrochemical measurements on Si wire array/polymer composite films showed that their energy-conversion properties were comparable to those of an array attached to the growth substrate. High quantum efficiencies were observed relative to the packing density of the wires, particularly with illumination at high angles of incidence. The results indicate that an inexpensive, solid-state Si wire array solar cell is possible, and a plan is presented to develop one.
Influence of etching current density on microstructural, optical and electrical properties of porous silicon (PS):n-Si heterostructure

NASA Astrophysics Data System (ADS)

Das, M.; Nath, P.; Sarkar, D.

2016-02-01

In this article effect of etching current density (J) on the microstructural, optical and electrical properties of photoelectrochemically prepared heterostructure is reported. Prepared samples are characterized by FESEM, XRD, UV-Visible, Raman and photoluminescence (PL) spectra and current-voltage (I-V) characteristics. FESEM shows presence of mixture of randomly distributed meso- and micro-pores. Porous layer thickness determined by cross section view of SEM is proportional to J. XRD shows crystalline nature but gradually extent of crystallinity decreases with increasing J. Raman spectra show large red-shift and asymmetric broadening with respect to crystalline silicon (c-Si). UV-visible reflectance and PL show blue shift in peaks with increasing J. The I-V characteristics are analyzed by the conventional thermionic emission (TE) model and Cheung's model to estimate the barrier height (φb), ideality factor (n) and series resistance (Rs) for comparison between the two models. The latter model is found to fit better.
A Hydrogen-Evolving Hybrid-Electrolyte Battery with Electrochemical/Photoelectrochemical Charging from Water Oxidation.

PubMed

Jin, Zhaoyu; Li, Panpan; Xiao, Dan

2017-02-08

Decoupled hydrogen and oxygen production were successfully embedded into an aqueous dual-electrolyte (acid-base) battery for simultaneous energy storage and conversion. A three-electrode configuration was adopted, involving an electrocatalytic hydrogen-evolving electrode as cathode, an alkaline battery-type or capacitor-type anode as shuttle, and a charging-assisting electrode for electro-/photoelectrochemically catalyzing water oxidation. The conceptual battery not only synergistically outputs electricity and chemical fuels with tremendous specific energy and power densities, but also supports various approaches to be charged by pure or solar-assisted electricity. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Si photoanode protected by a metal modified ITO layer with ultrathin NiO(x) for solar water oxidation.

PubMed

Sun, Ke; Shen, Shaohua; Cheung, Justin S; Pang, Xiaolu; Park, Namseok; Zhou, Jigang; Hu, Yongfeng; Sun, Zhelin; Noh, Sun Young; Riley, Conor T; Yu, Paul K L; Jin, Sungho; Wang, Deli

2014-03-14

We report an ultrathin NiOx catalyzed Si np(+) junction photoanode for a stable and efficient solar driven oxygen evolution reaction (OER) in water. A stable semi-transparent ITO/Au/ITO hole conducting oxide layer, sandwiched between the OER catalyst and the Si photoanode, is used to protect the Si from corrosion in an alkaline working environment, enhance the hole transportation, and provide a pre-activation contact to the NiOx catalyst. The NiOx catalyzed Si photoanode generates a photocurrent of 1.98 mA cm(-2) at the equilibrium water oxidation potential (EOER = 0.415 V vs. NHE in 1 M NaOH solution). A thermodynamic solar-to-oxygen conversion efficiency (SOCE) of 0.07% under 0.51-sun illumination is observed. The successful development of a low cost, highly efficient, and stable photoelectrochemical electrode based on earth abundant elements is essential for the realization of a large-scale practical solar fuel conversion.
Giant Dirac point shift of graphene phototransistors by doped silicon substrate current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimatani, Masaaki; Ogawa, Shinpei, E-mail: Ogawa.Shimpei@eb.MitsubishiElectric.co.jp; Fujisawa, Daisuke

2016-03-15

Graphene is a promising new material for photodetectors due to its excellent optical properties and high-speed response. However, graphene-based phototransistors have low responsivity due to the weak light absorption of graphene. We have observed a giant Dirac point shift upon white light illumination in graphene-based phototransistors with n-doped Si substrates, but not those with p-doped substrates. The source-drain current and substrate current were investigated with and without illumination for both p-type and n-type Si substrates. The decay time of the drain-source current indicates that the Si substrate, SiO{sub 2} layer, and metal electrode comprise a metal-oxide-semiconductor (MOS) capacitor due tomore » the presence of defects at the interface between the Si substrate and SiO{sub 2} layer. The difference in the diffusion time of the intrinsic major carriers (electrons) and the photogenerated electron-hole pairs to the depletion layer delays the application of the gate voltage to the graphene channel. Therefore, the giant Dirac point shift is attributed to the n-type Si substrate current. This phenomenon can be exploited to realize high-performance graphene-based phototransistors.« less
Visible light to electrical energy conversion using photoelectrochemical cells

NASA Technical Reports Server (NTRS)

Wrighton, Mark S. (Inventor); Ellis, Arthur B. (Inventor); Kaiser, Steven W. (Inventor)

1983-01-01

Sustained conversion of low energy visible or near i.r. light (>1.25 eV) to electrical energy has been obtained using wet photoelectrochemical cells where there are no net chemical changes in the system. Stabilization of n-type semi-conductor anodes of CdS, CdSe, CdTe, GaP, GaAs and InP to photoanodic dissolution is achieved by employing selected alkaline solutions of Na.sub.2 S, Na.sub.2 S/S, Na.sub.2 Se, Na.sub.2 Se/Se, Na.sub.2 Te and Na.sub.2 Te/Te as the electrolyte. The oxidation of (poly) sulfide, (poly)selenide or (poly)telluride species occurs at the irradiated anode, and reduction of polysulfide, polyselenide or polytelluride species occurs at the dark Pt cathode of the photoelectrochemical cell. Optical to electrical energy conversion efficiencies approaching 15% at selected frequencies have been observed in some cells. The wavelength for the onset of photocurrent corresponds to the band gap of the particular anode material used in the cell.
Synthesis, Characterization, and Photoelectrochemical Catalytic Studies of a Water-Stable Zinc-Based Metal-Organic Framework.

PubMed

Altaf, Muhammad; Sohail, Manzar; Mansha, Muhammad; Iqbal, Naseer; Sher, Muhammad; Fazal, Atif; Ullah, Nisar; Isab, Anvarhusein A

2018-02-09

Metal-organic frameworks (MOFs) are class of porous materials that can be assembled in a modular manner by using different metal ions and organic linkers. Owing to their tunable structural properties, these materials are found to be useful for gas storage and separation technologies, as well as for catalytic applications. A cost-effective zinc-based MOF ([Zn(bpcda)(bdc)] n ) is prepared by using N,N'-bis(pyridin-4-ylmethylene)cyclohexane-1,4-diamine [N,N'-bis(pyridin-4-ylmethylene)cyclohexane-1,4-diamine] and benzenedicarboxylic acid (bdc) linkers. This new material exhibits remarkable photoelectrochemical (PEC) catalytic activity in water splitting for the evolution of oxygen. Notably, this non-noble metal-based MOF, without requiring immobilization on other supports or containing metal particles, produced a highest photocurrent density of 31 μA cm -2 at 0.9 V, with appreciable stability and negligible photocorrosion. Advantageously for the oxygen evolution process, no external reagents or sacrificial agents are required in the aqueous electrolyte solution. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure.

PubMed

Lu, Jing; Tu, Xinglong; Yin, Guilin; Wang, Hui; He, Dannong

2017-11-09

In this work, a spot laser modulated resistance switching (RS) effect is firstly observed on n-type Mn-doped ZnO/SiO 2 /Si structure by growing n-type Mn-doped ZnO film on Si wafer covered with a 1.2 nm native SiO 2 , which has a resistivity in the range of 50-80 Ω∙cm. The I-V curve obtained in dark condition evidences the structure a rectifying junction, which is further confirmed by placing external bias. Compared to the resistance state modulated by electric field only in dark (without illumination), the switching voltage driving the resistance state of the structure from one state to the other, shows clear shift under a spot laser illumination. Remarkably, the switching voltage shift shows a dual dependence on the illumination position and power of the spot laser. We ascribe this dual dependence to the electric filed produced by the redistribution of photo-generated carriers, which enhance the internal barrier of the hetero-junction. A complete theoretical analysis based on junction current and diffusion equation is presented. The dependence of the switching voltage on spot laser illumination makes the n-type Mn-doped ZnO/SiO 2 /Si structure sensitive to light, which thus allows for the integration of an extra functionality in the ZnO-based photoelectric device.
Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

NASA Technical Reports Server (NTRS)

Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

1990-01-01

Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.
The effect of Mg-doping and Cu nonstoichiometry on the photoelectrochemical response of CuFeO 2

DOE PAGES

Wuttig, Anna; Krizan, Jason W.; Gu, Jing; ...

2016-11-14

Here, we report the tuning of CuFeO 2 photoelectrodes by Mg doping and Cu deficiency to demonstrate the effects of carrier concentration on the photoresponse. Carrier type and concentration were quantitatively assessed using the Hall effect on pure, Mg-incorporated, and Cu-deficient pellets (CuFe 1–xMg xO 2 and Cu 1–yFeO 2, x = 0, 0.0005, 0.005, 0.02, and y = 0.005, 0.02) over the range of thermodynamic stability achievable using solid-state synthesis. The same samples were used in a photoelectrochemical cell to measure their photoresponse. We find that the material with the lowest p-type carrier concentration and the highest carrier mobilitymore » shows the largest photoresponse. Furthermore, we show that increasing the p-type carrier concentration and thus the conductivity to high levels is limited by the delafossite defect chemistry, which changes the majority carrier type from p-type to n-type near the Mg solubility limit (x = 0.05) and at high Cu defect concentrations.« less
Using p-type PbS Quantum Dots to Quench Photocurrent of Fullerene-Au NP@MoS2 Composite Structure for Ultrasensitive Photoelectrochemical Detection of ATP.

PubMed

Li, Meng-Jie; Zheng, Ying-Ning; Liang, Wen-Bin; Yuan, Ruo; Chai, Ya-Qin

2017-12-06

Ultrasensitive and rapid quantification of the universal energy currency adenosine triphosphate (ATP) is an extremely critical mission in clinical applications. In this work, a "signal-off" photoelectrochemical (PEC) biosensor was designed for ultrasensitive ATP detection based on a fullerene (C 60 )-decorated Au nanoparticle@MoS 2 (C 60 -Au NP@MoS 2 ) composite material as a signal indicator and a p-type PbS quantum dot (QD) as an efficient signal quencher. Modification of wide band gap C 60 with narrow band gap MoS 2 to form an ideal PEC signal indicator was proposed, which could significantly improve photocurrent conversion efficiency, leading to a desirable PEC signal. In the presence of p-type PbS QDs, the PEC signal of n-type C 60 -Au NP@MoS 2 was effectively quenched because p-type PbS QDs could compete with C 60 -Au NP@MoS 2 to consume light energy and electron donor. Besides, the conversion of a limited amount of target ATP into an amplified output PbS QD-labeled short DNA sequence (output S 1 ) was achieved via target-mediated aptazyme cycling amplification strategy, facilitating ultrasensitive ATP detection. The proposed signal-off PEC strategy exhibited a wide linear range from 1.00 × 10 -2 pM to 100 nM with a low detection limit of 3.30 fM. Importantly, this proposed strategy provides a promising platform to detect ATP at ultralow levels and has potential applications, including diagnosis of ATP-related diseases, monitoring of diseases progression and evaluation of prognosis.
Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

DOE PAGES

Paulauskas, I. E.; Jellison, G. E.; Boatner, L. A.; ...

2011-01-01

The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with themore » significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.« less
Silicon Photoelectrode Thermodynamics and Hydrogen Evolution Kinetics Measured by Intensity-Modulated High-Frequency Resistivity Impedance Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Nicholas C.; Carroll, Gerard M.; Pekarek, Ryan T.

Here, we present an impedance technique based on light intensity-modulated high-frequency resistivity (IMHFR) that provides a new way to elucidate both the thermodynamics and kinetics in complex semiconductor photoelectrodes. We apply IMHFR to probe electrode interfacial energetics on oxide-modified semiconductor surfaces frequently used to improve the stability and efficiency of photoelectrochemical water splitting systems. Combined with current density-voltage measurements, the technique quantifies the overpotential for proton reduction relative to its thermodynamic potential in Si photocathodes coated with three oxides (SiO x, TiO 2, and Al 2O 3) and a Pt catalyst. In pH 7 electrolyte, the flatband potentials of TiOmore » 2- and Al 2O 3-coated Si electrodes are negative relative to samples with native SiO x, indicating that SiO x is a better protective layer against oxidative electrochemical corrosion than ALD-deposited crystalline TiO 2 or Al 2O 3. Adding a Pt catalyst to SiO x/Si minimizes proton reduction overpotential losses but at the expense of a reduction in available energy characterized by a more negative flatband potential relative to catalyst-free SiO x/Si.« less
Silicon Photoelectrode Thermodynamics and Hydrogen Evolution Kinetics Measured by Intensity-Modulated High-Frequency Resistivity Impedance Spectroscopy

DOE PAGES

Anderson, Nicholas C.; Carroll, Gerard M.; Pekarek, Ryan T.; ...

2017-10-05

Here, we present an impedance technique based on light intensity-modulated high-frequency resistivity (IMHFR) that provides a new way to elucidate both the thermodynamics and kinetics in complex semiconductor photoelectrodes. We apply IMHFR to probe electrode interfacial energetics on oxide-modified semiconductor surfaces frequently used to improve the stability and efficiency of photoelectrochemical water splitting systems. Combined with current density-voltage measurements, the technique quantifies the overpotential for proton reduction relative to its thermodynamic potential in Si photocathodes coated with three oxides (SiO x, TiO 2, and Al 2O 3) and a Pt catalyst. In pH 7 electrolyte, the flatband potentials of TiOmore » 2- and Al 2O 3-coated Si electrodes are negative relative to samples with native SiO x, indicating that SiO x is a better protective layer against oxidative electrochemical corrosion than ALD-deposited crystalline TiO 2 or Al 2O 3. Adding a Pt catalyst to SiO x/Si minimizes proton reduction overpotential losses but at the expense of a reduction in available energy characterized by a more negative flatband potential relative to catalyst-free SiO x/Si.« less
Nanowires from dirty multi-crystalline Si for hydrogen generation

NASA Astrophysics Data System (ADS)

Li, Xiaopeng; Schweizer, Stefan L.; Sprafke, Alexander; Wehrspohn, Ralf B.

2013-09-01

Silicon nanowires are considered as a promising architecture for solar energy conversion systems. By metal assisted chemical etching of multi-crystalline upgraded metallurgical silicon (UMG-Si), large areas of silicon nanowires (SiNWs) with high quality can be produced on the mother substrates. These areas show a low reflectance comparable to black silicon. More interestingly, we find that various metal impurities inside UMG-Si are removed due to the etching through element analysis. A prototype cell was built to test the photoelectrochemical (PEC) properties of UMG-SiNWs for water splitting. The on-set potential for hydrogen evolution was much reduced, and the photocurrent density showed an increment of 35% in comparison with a `dirty' UMG-Si wafer.
p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

NASA Technical Reports Server (NTRS)

Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

2000-01-01

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.
Insights into Interfacial Changes and Photoelectrochemical Stability of In(x)Ga(1-x)N (0001) Photoanode Surfaces in Liquid Environments.

PubMed

Caccamo, Lorenzo; Cocco, Giulio; Martín, Gemma; Zhou, Hao; Fundling, Sönke; Gad, Alaaeldin; Mohajerani, Matin Sadat; Abdelfatah, Mahmoud; Estradé, Sonia; Peiró, Francesca; Dziony, Wanja; Bremers, Heiko; Hangleiter, Andreas; Mayrhofer, Leonhard; Lilienkamp, Gerhard; Moseler, Michael; Daum, Winfried; Waag, Andreas

2016-03-01

The long-term stability of InGaN photoanodes in liquid environments is an essential requirement for their use in photoelectrochemistry. In this paper, we investigate the relationships between the compositional changes at the surface of n-type In(x)Ga(1-x)N (x ∼ 0.10) and its photoelectrochemical stability in phosphate buffer solutions with pH 7.4 and 11.3. Surface analyses reveal that InGaN undergoes oxidation under photoelectrochemical operation conditions (i.e., under solar light illumination and constant bias of 0.5 VRHE), forming a thin amorphous oxide layer having a pH-dependent chemical composition. We found that the formed oxide is mainly composed of Ga-O bonds at pH 7.4, whereas at pH 11.3 the In-O bonds are dominant. The photoelectrical properties of InGaN photoanodes are intimately related to the chemical composition of their surface oxides. For instance, after the formation of the oxide layer (mainly Ga-O bonds) at pH 7.4, no photocurrent flow was observed, whereas the oxide layer (mainly In-O bonds) at pH 11.3 contributes to enhance the photocurrent, possibly because of its reported high photocatalytic activity. Once a critical oxide thickness was reached, especially at pH 7.4, no significant changes in the photoelectrical properties were observed for the rest of the test duration. This study provides new insights into the oxidation processes occurring at the InGaN/liquid interface, which can be exploited to improve InGaN stability and enhance photoanode performance for biosensing and water-splitting applications.
Theoretical predictions of a bucky-diamond SiC cluster.

PubMed

Yu, Ming; Jayanthi, C S; Wu, S Y

2012-06-15

A study of structural relaxations of Si(n)C(m) clusters corresponding to different compositions, different relative arrangements of Si/C atoms, and different types of initial structure, reveals that the Si(n)C(m) bucky-diamond structure can be obtained for an initial network structure constructed from a truncated bulk 3C-SiC for a magic composition corresponding to n = 68 and m = 79. This study was performed using a semi-empirical Hamiltonian (SCED-LCAO) since it allowed an extensive search of different types of initial structures. However, the bucky-diamond structure predicted by this method was also confirmed by a more accurate density functional theory (DFT) based method. The bucky-diamond structure exhibited by a SiC-based system represents an interesting paradigm where a Si atom can form three-coordinated as well as four-coordinated networks with carbon atoms and vice versa and with both types of network co-existing in the same structure. Specifically, the bucky-diamond structure of the Si(68)C(79) cluster consists of a 35-atom diamond-like inner core (four-atom coordinations) suspended inside a 112-atom fullerene-like shell (three-atom coordinations).
Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

NASA Astrophysics Data System (ADS)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.
Formation mechanism of TiO2 nanotubes and their applications in photoelectrochemical water splitting and supercapacitors.

PubMed

Chen, Bo; Hou, Junbo; Lu, Kathy

2013-05-14

Structural observations of the transition of TiO2 nanopores into nanotubes by increasing the OH(-) concentration in the electrolyte challenge the validity of existing formation mechanisms of anodic TiO2 nanotubes. In this study, dehydration of titanium hydroxide in the cell wall is proposed as the mechanism that leads to the separation of neighboring nanotubes. Based on this understanding, bamboo-type TiO2 nanotubes with large surface area and excellent interconnectivity are achieved by cycling high and low applied potentials. After thermal treatment in a H2 atmosphere, the bamboo-type TiO2 nanotubes show large photoelectrochemical water splitting efficiency and supercapacitors performace.
Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

NASA Astrophysics Data System (ADS)

Shiozaki, Nanako; Hashizume, Tamotsu

2009-03-01

Surface control of n-GaN was performed by applying a photoelectrochemical oxidation method in a glycol solution to improve the optical and electronic characteristics. The fundamental properties of the oxidation were investigated. The oxidation, chemical composition, and bonding states were analyzed by x-ray photoelectron spectroscopy and micro-Auger electron spectroscopy, in which confirmed the formation of gallium oxide on the surface. The oxide formation rate was about 8 nm/min under UV illumination of 4 mW/cm2. After establishing the basic properties for control of n-GaN oxidation, the surface control technique was applied to achieve low-damage etching, enhancement of the photoluminescence intensity, and selective passivation of the air-exposed sidewalls in an AlGaN/GaN high electron mobility transistor wire structure. The capacitance-voltage measurement revealed the minimum interface-state density between GaN and anodic oxide to be about 5×1011 cm-2 eV-1, which is rather low value for compound semiconductors.
Synergetic effect of Ti 3+ and oxygen doping on enhancing photoelectrochemical and photocatalytic properties of TiO 2/g-C 3N 4 heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Kai; Huang, Zhenyu; Zeng, Xiaoqiao

To improve the utilization of visible light and reduce photogenerated electron/hole recombination, Ti 3+ self-doped TiO 2/oxygen-doped graphitic carbon nitride (Ti 3+-TiO 2/O-g-C 3N 4) heterojunctions were prepared via hydrothermal treatment of a mixture of g-C 3N 4 and titanium oxohydride sol obtained from the reaction of TiH 2 with H 2O 2. In this way, exfoliated O-g-C 3N 4 and Ti 3+-TiO 2 nanoparticles were obtained. Simultaneously, strong bonding was formed between Ti 3+-TiO 2 nanoparticles and exfoliated O-g-C 3N 4 during the hydrothermal process. Charge transfer and recombination processes were characterized by transient photocurrent responses, electrochemical impedance test,more » and photoluminescence spectroscopy. The photocatalytic performances were investigated through rhodamine B degradation test under an irradiation source based on 30 W cold visible-light-emitting diode. The highest visible-light photoelectrochemical and photocatalytic activities were observed from the heterojunction with 1:2 mass ratio of Ti 3+-TiO 2 to O-g-C 3N 4. The photodegradation reaction rate constant based on this heterojuction is 0.0356 min -1, which is 3.87 and 4.56 times higher than those of pristine Ti 3+-TiO 2 and pure g-C 3N 4, respectively. Here, the remarkably high photoelectrochemical and photocatalytic performances of the heterojunctions are mainly attributed to the synergetic effect of efficient photogenerated electron-hole separation, decreased electron transfer resistance from interfacial chemical hydroxy residue bonds, and oxidizing groups originating from Ti 3+-TiO 2 and O-g-C 3N 4.« less
Synergetic Effect of Ti3+ and Oxygen Doping on Enhancing Photoelectrochemical and Photocatalytic Properties of TiO2/g-C3N4 Heterojunctions.

PubMed

Li, Kai; Huang, Zhenyu; Zeng, Xiaoqiao; Huang, Baibiao; Gao, Shanmin; Lu, Jun

2017-04-05

To improve the utilization of visible light and reduce photogenerated electron/hole recombination, Ti 3+ self-doped TiO 2 /oxygen-doped graphitic carbon nitride (Ti 3+ -TiO 2 /O-g-C 3 N 4 ) heterojunctions were prepared via hydrothermal treatment of a mixture of g-C 3 N 4 and titanium oxohydride sol obtained from the reaction of TiH 2 with H 2 O 2 . In this way, exfoliated O-g-C 3 N 4 and Ti 3+ -TiO 2 nanoparticles were obtained. Simultaneously, strong bonding was formed between Ti 3+ -TiO 2 nanoparticles and exfoliated O-g-C 3 N 4 during the hydrothermal process. Charge transfer and recombination processes were characterized by transient photocurrent responses, electrochemical impedance test, and photoluminescence spectroscopy. The photocatalytic performances were investigated through rhodamine B degradation test under an irradiation source based on 30 W cold visible-light-emitting diode. The highest visible-light photoelectrochemical and photocatalytic activities were observed from the heterojunction with 1:2 mass ratio of Ti 3+ -TiO 2 to O-g-C 3 N 4 . The photodegradation reaction rate constant based on this heterojuction is 0.0356 min -1 , which is 3.87 and 4.56 times higher than those of pristine Ti 3+ -TiO 2 and pure g-C 3 N 4 , respectively. The remarkably high photoelectrochemical and photocatalytic performances of the heterojunctions are mainly attributed to the synergetic effect of efficient photogenerated electron-hole separation, decreased electron transfer resistance from interfacial chemical hydroxy residue bonds, and oxidizing groups originating from Ti 3+ -TiO 2 and O-g-C 3 N 4 .
Synergetic effect of Ti 3+ and oxygen doping on enhancing photoelectrochemical and photocatalytic properties of TiO 2/g-C 3N 4 heterojunctions

DOE PAGES

Li, Kai; Huang, Zhenyu; Zeng, Xiaoqiao; ...

2017-03-07

To improve the utilization of visible light and reduce photogenerated electron/hole recombination, Ti 3+ self-doped TiO 2/oxygen-doped graphitic carbon nitride (Ti 3+-TiO 2/O-g-C 3N 4) heterojunctions were prepared via hydrothermal treatment of a mixture of g-C 3N 4 and titanium oxohydride sol obtained from the reaction of TiH 2 with H 2O 2. In this way, exfoliated O-g-C 3N 4 and Ti 3+-TiO 2 nanoparticles were obtained. Simultaneously, strong bonding was formed between Ti 3+-TiO 2 nanoparticles and exfoliated O-g-C 3N 4 during the hydrothermal process. Charge transfer and recombination processes were characterized by transient photocurrent responses, electrochemical impedance test,more » and photoluminescence spectroscopy. The photocatalytic performances were investigated through rhodamine B degradation test under an irradiation source based on 30 W cold visible-light-emitting diode. The highest visible-light photoelectrochemical and photocatalytic activities were observed from the heterojunction with 1:2 mass ratio of Ti 3+-TiO 2 to O-g-C 3N 4. The photodegradation reaction rate constant based on this heterojuction is 0.0356 min -1, which is 3.87 and 4.56 times higher than those of pristine Ti 3+-TiO 2 and pure g-C 3N 4, respectively. Here, the remarkably high photoelectrochemical and photocatalytic performances of the heterojunctions are mainly attributed to the synergetic effect of efficient photogenerated electron-hole separation, decreased electron transfer resistance from interfacial chemical hydroxy residue bonds, and oxidizing groups originating from Ti 3+-TiO 2 and O-g-C 3N 4.« less
ZnO nanoflower-based photoelectrochemical DNAzyme sensor for the detection of Pb2+.

PubMed

Zhang, Bintian; Lu, Lili; Hu, Qichang; Huang, Feng; Lin, Zhang

2014-06-15

Lead contamination is now widespread, and exposure to lead may cause adverse effects on human beings. In this study, a photoelectrochemical sensor based on flower-like ZnO nanostructures was developed for Pb(2+) detection, using a Pb(2+)-dependent DNAzyme as the recognition unit and a double-strand DNA intercalator, Ru(bpy)2(dppz)(2+) (bpy=2,2'-bipyridine, dppz=dipyrido[3,2-a:2',3'-c] phenazine) as the photoelectrochemical signal reporter. The ZnO nanoflower was fabricated on an indium tin oxide (ITO) electrode by the convenient hydrothermal decomposition method. The morphology and photoelectrochemical property of the ZnO nanoflowers were characterized by SEM, XRD and photocurrent measurements. DNAzyme-substrate duplex was assembled on an ITO/ZnO electrode through electrostatic adsorption. In the presence of Pb(2+), RNA-cleavage activity of the DNAzyme was activated and its substrate strand was cleaved, resulting in the release of Ru(bpy)2(dppz)(2+) from the DNA film and the concomitant photocurrent decrease. The detection principle was verified by fluorescence measurements. Under the optimized conditions, a linear relationship between photocurrent and Pb(2+) concentration was obtained over the range of 0.5-20 nM, with a detection limit of 0.1 nM. Interference from other common metal ions was found negligible. Applicability of the sensor was demonstrated by analyzing lead level in human serum and Pb(2+) spiked water samples. This facile and economical sensor system showed high sensitivity and selectivity, thus can be potentially applied for on-site monitoring of lead contaminant. Copyright © 2014 Elsevier B.V. All rights reserved.
Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers.

PubMed

Wei, Chun-You; Lin, Chu-Hsuan; Hsiao, Hao-Tse; Yang, Po-Chuan; Wang, Chih-Ming; Pan, Yen-Chih

2013-11-22

Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.
Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting.

PubMed

Varadhan, Purushothaman; Fu, Hui-Chun; Priante, Davide; Retamal, Jose Ramon Duran; Zhao, Chao; Ebaid, Mohamed; Ng, Tien Khee; Ajia, Idirs; Mitra, Somak; Roqan, Iman S; Ooi, Boon S; He, Jr-Hau

2017-03-08

Hydrogen production via photoelectrochemical water-splitting is a key source of clean and sustainable energy. The use of one-dimensional nanostructures as photoelectrodes is desirable for photoelectrochemical water-splitting applications due to the ultralarge surface areas, lateral carrier extraction schemes, and superior light-harvesting capabilities. However, the unavoidable surface states of nanostructured materials create additional charge carrier trapping centers and energy barriers at the semiconductor-electrolyte interface, which severely reduce the solar-to-hydrogen conversion efficiency. In this work, we address the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol). The surface-treated photocathode showed an enhanced photocurrent density of -31 mA/cm 2 at -0.2 V versus RHE with an incident photon-to-current conversion efficiency of 18.3%, whereas untreated nanowires yielded only 8.1% efficiency. Furthermore, the surface passivation provides enhanced photoelectrochemical stability as surface-treated nanowires retained ∼80% of their initial photocurrent value and produced 8000 μmol of gas molecules over 55 h at acidic conditions (pH ∼ 0), whereas the untreated nanowires demonstrated only <4 h of photoelectrochemical stability. These findings shed new light on the importance of surface passivation of nanostructured photoelectrodes for photoelectrochemical applications.

Enhanced photoelectrochemical activity in all-oxide heterojunction devices based on correlated "metallic" oxides.

PubMed

Apgar, Brent A; Lee, Sungki; Schroeder, Lauren E; Martin, Lane W

2013-11-20

n-n Schottky, n-n ohmic, and p-n Schottky heterojunctions based on TiO2 /correlated "metallic" oxide couples exhibit strong solar-light absorption driven by the unique electronic structure of the "metallic" oxides. Photovoltaic and photocatalytic responses are driven by hot electron injection from the "metallic" oxide into the TiO2 , enabling new modalities of operation for energy systems. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

NASA Astrophysics Data System (ADS)

Sakwe, S. A.; Müller, R.; Wellmann, P. J.

2006-04-01

We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.
Electrochemical and photoelectrochemical nano-immunesensing using origami paper based method.

PubMed

Hasanzadeh, Mohammad; Shadjou, Nasrin

2016-04-01

Patterned paper has characteristics that lead to miniaturized assays that run by capillary action with small volumes of fluids. These methods suggest a path for the development of simple, inexpensive, and portable diagnostic assays that can be useful in remote settings, where simple immunoassays are becoming increasingly important for detecting disease and monitoring health. Incorporation of nanomaterials plays a major role in sensing probe immobilization and detection sensitivity of paper-based devices. Nanomaterial properties, such as increased surface area, have aided with signal amplification and lower detection limits. This review focuses on application of nanomaterials as signal amplification elements on origami paper-based electro-analytical devices for immune biomarkers detection with a brief introduction about various fabrication techniques and designs, biological and detection methods. In this review, we comprehensively summarize the selected latest research articles from 2013 to May 2015 on application of nanomaterials in various types of origami paper based electrochemical and photoelectrochemical immunosensors. The review breaks into two parts. The first part devotes to the development and applications of nanomaterials in electrochemical immunesensing. The second part provides an overview of recent origami paper based photoelectrochemical immunosensors. Copyright © 2015 Elsevier B.V. All rights reserved.
Study on the energy band structure and photoelectrochemical performances of spinel Li{sub 4}Ti{sub 5}O{sub 12}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ge, Hao; Tian, Hui; Song, Hua

2015-01-15

Highlights: • Spinel Li{sub 4}Ti{sub 5}O{sub 12} possesses more positive potential of valence band and wider band gap than TiO{sub 2}. • Spinel Li{sub 4}Ti{sub 5}O{sub 12} displays typical n-type semiconductor characteristic and excellent UV-excitateded photocatalysis activity. • Our preliminary study will open new perspectives in investigation of other lithium-based compounds for new photocatalysts. - Abstract: Energy band structure, photoelectrochemical performances and photocatalysis activity of spinel Li{sub 4}Ti{sub 5}O{sub 12} are investigated for the first time in this paper. Li{sub 4}Ti{sub 5}O{sub 12} possesses more positive valence band potential and wider band gap than TiO{sub 2} due to its valencemore » band consisting of Li{sub 1s} and Ti{sub 3d} orbitals mixed with O{sub 2p}. Li{sub 4}Ti{sub 5}O{sub 12} shows typical photocatalysis material characteristics and excellent photocatlytic activity under UV irradiation.« less
Optical and photoelectrochemical performance study based on n-ZnO nanorod arrays/p-CuAlO2 laminar films/Ni heterojunction

NASA Astrophysics Data System (ADS)

Ding, Juan; Yang, Haibin; Deng, Weiwen

2014-06-01

A novel ZnO nanorod arrays (NRs)/CuAlO2 laminar films heterojunction nanostructure was grown on the substrate of Ni plates using sol-gel synthesis for laminar films and subsequent hydrothermal reaction for nanorod arrays. The surface morphology, structure, optical and photoelectrochemical behaviors of this heterojunction were considered. Two significant absorption peaks of UV-vis spectra and a favorable forward current to reverse current ratio at applied voltage of -0.7 V to +2 V were observed in this heterojunction. Furthermore, the photoelectrochemical property was indicated that the highest photocurrent of 0.67 mA/cm2 was obtained under AM 1.5 illumination (vs Ag/AgCl). This heterojunction will play an important role in the optoelectronic fields and can be extended to other binary or ternary oxide compositions for optoelectronic applications.
Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

NASA Astrophysics Data System (ADS)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).
Influence of the transition region between p- and n-type polycrystalline silicon passivating contacts on the performance of interdigitated back contact silicon solar cells

NASA Astrophysics Data System (ADS)

Reichel, Christian; Müller, Ralph; Feldmann, Frank; Richter, Armin; Hermle, Martin; Glunz, Stefan W.

2017-11-01

Passivating contacts based on thin tunneling oxides (SiOx) and n- and p-type semi-crystalline or polycrystalline silicon (poly-Si) enable high passivation quality and low contact resistivity, but the integration of these p+/n emitter and n+/n back surface field junctions into interdigitated back contact silicon solar cells poses a challenge due to high recombination at the transition region from p-type to n-type poly-Si. Here, the transition region was created in different configurations—(a) p+ and n+ poly-Si regions are in direct contact with each other ("pn-junction"), using a local overcompensation (counterdoping) as a self-aligning process, (b) undoped (intrinsic) poly-Si remains between the p+ and n+ poly-Si regions ("pin-junction"), and (c) etched trenches separate the p+ and n+ poly-Si regions ("trench")—in order to investigate the recombination characteristics and the reverse breakdown behavior of these solar cells. Illumination- and injection-dependent quasi-steady state photoluminescence (suns-PL) and open-circuit voltage (suns-Voc) measurements revealed that non-ideal recombination in the space charge regions with high local ideality factors as well as recombination in shunted regions strongly limited the performance of solar cells without a trench. In contrast, solar cells with a trench allowed for open-circuit voltage (Voc) of 720 mV, fill factor of 79.6%, short-circuit current (Jsc) of 41.3 mA/cm2, and a conversion efficiencies (η) of 23.7%, showing that a lowly conducting and highly passivating intermediate layer between the p+ and n+ poly-Si regions is mandatory. Independent of the configuration, no hysteresis was observed upon multiple stresses in reverse direction, indicating a controlled and homogeneously distributed breakdown, but with different breakdown characteristics.
Visible-blind ultraviolet photodetectors on porous silicon carbide substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naderi, N.; Hashim, M.R., E-mail: roslan@usm.my

2013-06-01

Highlights: • Highly reliable UV detectors are fabricated on porous silicon carbide substrates. • The optical properties of samples are enhanced by increasing the current density. • The optimized sample exhibits enhanced sensitivity to the incident UV radiation. - Abstract: Highly reliable visible-blind ultraviolet (UV) photodetectors were successfully fabricated on porous silicon carbide (PSC) substrates. High responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photodetector that was fabricated on an optimized PSC substrate. The PSC samples were prepared via the UV-assisted photo-electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using different etching current densities. Themore » optical results showed that the current density is an outstanding etching parameter that controls the porosity and uniformity of PSC substrates. A highly porous substrate was synthesized using a suitable etching current density to enhance its light absorption, thereby improving the sensitivity of UV detector with this substrate. The electrical characteristics of fabricated devices on optimized PSC substrates exhibited enhanced sensitivity and responsivity to the incident radiation.« less
Heat-Electric Power Conversion Without Temperature Difference Using Only n-Type Ba8Au x Si46-x Clathrate with Au Compositional Gradient

NASA Astrophysics Data System (ADS)

Osakabe, Yuki; Tatsumi, Shota; Kotsubo, Yuichi; Iwanaga, Junpei; Yamasoto, Keita; Munetoh, Shinji; Furukimi, Osamu; Nakashima, Kunihiko

2018-02-01

Thermoelectric power generation is typically based on the Seebeck effect under a temperature gradient. However, the heat flux generated by the temperature difference results in low conversion efficiency. Recently, we developed a heat-electric power conversion mechanism using a material consisting of a wide-bandgap n-type semiconductor, a narrow-bandgap intrinsic semiconductor, and a wide-bandgap p-type semiconductor. In this paper, we propose a heat-electric power conversion mechanism in the absence of a temperature difference using only n-type Ba8Au x Si46-x clathrate. Single-crystal Ba8Au x Si46-x clathrate with a Au compositional gradient was synthesized by Czochralski method. Based on the results of wavelength-dispersive x-ray spectroscopy and Seebeck coefficient measurements, the presence of a Au compositional gradient in the sample was confirmed. It also observed that the electrical properties changed gradually from wide-bandgap n-type to narrow-bandgap n-type. When the sample was heated in the absence of a temperature difference, the voltage generated was approximately 0.28 mV at 500°C. These results suggest that only an n-type semiconductor with a controlled bandgap can generate electric power in the absence of a temperature difference.
Hierarchical Cu2O foam/g-C3N4 photocathode for photoelectrochemical hydrogen production

NASA Astrophysics Data System (ADS)

Ma, Xinzhou; Zhang, Jingtao; Wang, Biao; Li, Qiuguo; Chu, Sheng

2018-01-01

Solar photoelectrochemical (PEC) hydrogen production is a promising way for solving energy and environment problems. Earth-abundant Cu2O is a potential light absorber for PEC hydrogen production. In this article, hierarchical porous Cu2O foams are prepared by thermal oxidation of the electrochemically deposited Cu foams. PEC performances of the Cu2O foams are systematically studied and discussed. Benefiting from their higher light harvesting and more efficient charge separation, the Cu2O foams demonstrate significantly enhanced photocurrents and photostability compared to their film counterparts. Moreover, by integrating g-C3N4, hierarchical Cu2O foam/g-C3N4 composites are prepared with further improved photocurrent and photostability, appearing to be potential photocathodes for solar PEC hydrogen production. This study may provide a new and useful insight for the development of Cu2O-based photocathodes for PEC hydrogen production.
Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

PubMed Central

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-01-01

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I–V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later. PMID:28252106
Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

NASA Astrophysics Data System (ADS)

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-01

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.
Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers.

PubMed

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-02

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO 2 /nanoporous-Si and the TiO 2 /nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO 2 /nanoporous Si are lower than that of the HfO 2 /nanoporous Si, the former is more stable than the later.
Influence of immersion cycles during n-β-Bi2O3 sensitization on the photoelectrochemical behaviour of N-F-codoped TiO2 nanotubes

NASA Astrophysics Data System (ADS)

Hoyos, Lina J.; Rivera, Diego F.; Gualdrón-Reyes, Andrés F.; Ospina, Rogelio; Rodríguez-Pereira, Jhonatan; Ropero-Vega, Jose L.; Niño-Gómez, Martha E.

2017-11-01

Sensitization of TiO2 nanotube (TNT)-based photoanodes with narrow-band gap semiconductors is an important alternative to improving the photoelectrochemical properties of the material. However, the interaction between the sensitizer and TNT is not understood deeply enough to relate charge carrier transport into the composite photoanode with its photoactivity. In this contribution, we studied the photoelectrochemical behaviour of N-F-self codoped TiO2 nanotubes (N-F-TNTs) that were grown by anodization of titanium plates and sensitized with β-Bi2O3 by immersing the TNTs into a Bi2O3 sol solution by dip-coating. The number of immersion cycles was varied. The as-fabricated photoanodes were characterized by FESEM, GIXRD, DRS and XPS, while their photoelectrochemical and semiconducting properties were investigated by photovoltammetry, electrochemical impedance spectroscopy and Mott-Schottky analysis in 0.1 M HClO4. The photoelectrocatalytic activity of the composite photoanodes was evaluated for glycerol oxidation under acidic and alkaline conditions. The N-F-TNTs exhibit a well-oriented structure after β-Bi2O3 deposition. The presence of substitutions of both N and F, identified by XPS, indicates the self-doping of the TNTs during anodization. The visible-light harvesting of the N-F-TNT photoanode was enhanced after three -immersion cycles during β-Bi2O3 sensitization, establishing an adequate n-n heterojunction at the N-F-TNT/Bi2O3 interface. In addition, bismuth migration from the sensitizer to the TNT lattice was promoted during thermal treatment, forming Bi-N-F-tridoping of TNT (Bi-N-F-TNT). The suitable band alignment between TNT and β-Bi2O3 and incorporation of the Bi3+ energy levels into TiO2 facilitate charge carrier separation and electron transport throughout the cell. Nevertheless, increasing the number of immersion cycles over three creates an excess of Bi3+ species at the N-F-TNT/β-Bi2O3 interface, producing an energetic barrier that hinders electron transport. The Bi-N-F-TNT/Bi2O3 photoanode was still photoactive after glycerol oxidation under visible illumination, indicating that its oxidizing power and stability remained.
Photoelectrochemical Hydrogen Production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Jian

The objectives of this project, covering two phases and an additional extension phase, were the development of thin film-based hybrid photovoltaic (PV)/photoelectrochemical (PEC) devices for solar-powered water splitting. The hybrid device, comprising a low-cost photoactive material integrated with amorphous silicon (a-Si:H or a-Si in short)-based solar cells as a driver, should be able to produce hydrogen with a 5% solar-to-hydrogen conversion efficiency (STH) and be durable for at least 500 hours. Three thin film material classes were studied and developed under this program: silicon-based compounds, copper chalcopyrite-based compounds, and metal oxides. With the silicon-based compounds, more specifically the amorphous siliconmore » carbide (a-SiC), we achieved a STH efficiency of 3.7% when the photoelectrode was coupled to an a-Si tandem solar cell, and a STH efficiency of 6.1% when using a crystalline Si PV driver. The hybrid PV/a-SiC device tested under a current bias of -3~4 mA/cm{sup 2}, exhibited a durability of up to ~800 hours in 0.25 M H{sub 2}SO{sub 4} electrolyte. Other than the PV driver, the most critical element affecting the photocurrent (and hence the STH efficiency) of the hybrid PV/a-SiC device was the surface energetics at the a-SiC/electrolyte interface. Without surface modification, the photocurrent of the hybrid PEC device was ~1 mA/cm{sup 2} or lower due to a surface barrier that limits the extraction of photogenerated carriers. We conducted an extensive search for suitable surface modification techniques/materials, of which the deposition of low work function metal nanoparticles was the most successful. Metal nanoparticles of ruthenium (Ru), tungsten (W) or titanium (Ti) led to an anodic shift in the onset potential. We have also been able to develop hybrid devices of various configurations in a monolithic fashion and optimized the current matching via altering the energy bandgap and thickness of each constituent cell. As a result, the short-circuit photocurrent density of the hybrid device (measured in a 2-electrode configuration) increased significantly without assistance of any external bias, i.e. from ≤1 mA/cm{sup 2} to ~5 mA/cm{sup 2}. With the copper chalcopyrite compounds, we have achieved a STH efficiency of 3.7% in a coplanar configuration with 3 a-Si solar cells and one CuGaSe{sub 2} photocathode. This material class exhibited good durability at a photocurrent density level of -4 mA/cm{sup 2} (“5% STH” equivalent) at a fixed potential (-0.45 VRHE). A poor band-edge alignment with the hydrogen evolution reaction (HER) potential was identified as the main limitation for high STH efficiency. Three new pathways have been identified to solve this issue. First, PV driver with bandgap lower than that of amorphous silicon were investigated. Crystalline silicon was identified as possible bottom cell. Mechanical stacks made with one Si solar cell and one CuGaSe{sub 2} photocathode were built. A 400 mV anodic shift was observed with the Si cell, leading to photocurrent density of -5 mA/cm{sup 2} at 0VRHE (compared to 0 mA/cm{sup 2} at the same potential without PV driver). We also investigated the use of p-n junctions to shift CuGaSe{sub 2} flatband potential anodically. Reactively sputtered zinc oxy-sulfide thin films was evaluated as n-type buffer and deposited on CuGaSe{sub 2}. Ruthenium nanoparticles were then added as HER catalyst. A 250 mV anodic shift was observed with the p-n junction, leading to photocurrent density at 0VRHE of -1.5 mA/cm{sup 2}. Combining this device with a Si solar cell in a mechanical stack configuration shifted the onset potential further (+400 mV anodically), leading to photocurrent density of -7 mA/cm{sup 2} at 0VRHE. Finally, we developed wide bandgap copper chalcopyrite thin film materials. We demonstrated that Se can be substituted with S using a simple annealing step. Photocurrent densities in the 5-6 mA/cm{sub 2} range were obtained with red 2.0eV CuInGaS{sub 2} photocathodes. With the metal oxide compounds, we have demonstrated that a WO{sub 3}-based hybrid photoelectrode was feasible. Specifically, we showed that WO{sub 3} paired with an a-Si tandem solar cell can generate short circuit photocurrent density of 2.5 mA/cm{sup 2}, equivalent to STH efficiency of 3.1%. Long-term durability tests demonstrated WO{sub 3} ability to split water over extended periods, for up to 600 hours at current density levels of 2.0-2.5 mA/cm{sup 2}. Efforts have been done to decrease WO{sub 3} bandgap using foreign elements incorporation. We did not manage to reduce the bandgap of WO{sub 3} with this method. However, more promising results have been achieved with bilayered systems, where only the top part of WO{sub 3} films was modified. Also, we have demonstrated that alloying WO{sub 3} with CuO can form 2.2eV bandgap CuWO{sub 4}. Incorporating conductive carbon nanotubes in CuWO{sub 4} reduced its intrinsic bulk resistance. Saturation photocurrent densities in the 0.4-0.5 mA/cm{sub 2} range were achieved. Recently, in collaboration with University of Texas at Arlington, we have identified new quaternary metal oxides with CuWO{sub 4} as primary material host. Our experimental work on ceramics confirmed the theoretical calculations that crowned bismuth as a possible candidate to improve CuWO{sub 4} water splitting efficiency.« less
A review on solar cells from Si-single crystals to porous materials and quantum dots

PubMed Central

Badawy, Waheed A.

2013-01-01

Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12–16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper–indium–selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe–TiO2 architecture have been developed. PMID:25750746
A review on solar cells from Si-single crystals to porous materials and quantum dots.

PubMed

Badawy, Waheed A

2015-03-01

Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12-16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper-indium-selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe-TiO2 architecture have been developed.
Dye sensitized photoelectrochemical immunosensor for the tumor marker CEA by using a flower-like 3D architecture prepared from graphene oxide and MoS2.

PubMed

Song, Kaijing; Ding, Chuanmin; Zhang, Bing; Chang, Honghong; Zhao, Zhihuan; Wei, Wenlong; Wang, Junwen

2018-06-01

The authors describe a dye-sensitized photoelectrochemical immunoassay for the tumor marker carcinoembryonic antigen (CEA). The method employs the rhodamine dye Rh123 with red color and absorption maximum at 500 nm for spectral sensitization, and a 3D nanocomposite prepared from graphene oxide and MoS 2 acting as the photoelectric conversion layer. The nanocomposite with flower-like 3D architectures was characterized by transmission electron microscopy, scanning electron microscopy, X-ray powder diffraction, and UV-vis diffuse reflectometry. A photoelectrochemical sandwich immunoassay was developed that is based on the use of the nanocomposite and based on the specific binding of antibody and antigen, and by using a secondary antibody labeled with Rh123 and CdS (Ab 2 -Rh123@CdS). Under optimal conditions and at a typical working voltage of 0 V (vs. Hg/HgCl 2 ), the photocurrent increases linearly 10 pg mL -1 to 80 ng mL -1 CEA concentration range, with a 3.2 pg mL -1 detection limit. Graphical abstract Flower-like GO-MoS 2 complex with high efficiency of electron transport was synthesized to construct photoelectrochemical platform. The sandwich-type immunoassay was built on this platform based on specific binding of antigen and antibody. Carcinoembryonic antigen in sample was detected sensitively by using sensitization of rhodamine dye Rh123 as signal amplification strategy.
Spray pyrolysis deposition and photoelectrochemical properties of n-type BiOI nanoplatelet thin films.

PubMed

Hahn, Nathan T; Hoang, Son; Self, Jeffrey L; Mullins, C Buddie

2012-09-25

Bismuth oxy-iodide is a potentially interesting visible-light-active photocatalyst; yet there is little research regarding its photoelectrochemical properties. Herein we report the synthesis of BiOI nanoplatelet photoelectrodes by spray pyrolysis on fluorine-doped tin oxide substrates at various temperatures. The films exhibited n-type conductivity, most likely due to the presence of anion vacancies, and optimized films possessed incident photon conversion efficiencies of over 20% in the visible range for the oxidation of I(-) to I(3)(-) at 0.4 V vs Ag/AgCl in acetonitrile. Visible-light photons (λ > 420 nm) contributed approximately 75% of the overall photocurrent under AM1.5G illumination, illustrating their usefulness under solar light illumination. A deposition temperature of 260 °C was found to result in the best performance due to the balance of morphology, crystallinity, impurity levels, and optical absorption, leading to photocurrents of roughly 0.9 mA/cm(2) at 0.4 V vs Ag/AgCl. Although the films performed stably in acetonitrile, their performance decreased significantly upon extended exposure to water, which was apparently caused by a loss of surface iodine and subsequent formation of an insulating bismuth hydroxide layer.
Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

NASA Astrophysics Data System (ADS)

Du, H. W.; Yang, J.; Li, Y. H.; Xu, F.; Xu, J.; Ma, Z. Q.

2015-03-01

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiOx/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (Vbi = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

Heterojunction photodiode on cleaved SiC

NASA Astrophysics Data System (ADS)

Solovan, Mykhailo M.; Farah, John; Kovaliuk, Taras T.; Brus, Viktor V.; Mostovyi, Andrii I.; Maistruk, Eduard V.; Maryanchuk, Pavlo D.

2018-01-01

Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.
Resistance change effect in SrTiO3/Si (001) isotype heterojunction

NASA Astrophysics Data System (ADS)

Huang, Xiushi; Gao, Zhaomeng; Li, Pei; Wang, Longfei; Liu, Xiansheng; Zhang, Weifeng; Guo, Haizhong

2018-02-01

Resistance switching has been observed in double and multi-layer structures of ferroelectric films. The higher switching ratio opens up a vast path for emerging ferroelectric semiconductor devices. An n-n+ isotype heterojunction has been fabricated by depositing an oxide SrTiO3 layer on a conventional n-type Si (001) substrate (SrTiO3/Si) by pulsed laser disposition. Rectification and resistive switching behaviors in the n-n+ SrTiO3/Si heterojunction were observed by a conductive atomic force microscopy, and the n-n+ SrTiO3/Si heterojunction exhibits excellent endurance and retention characteristics. The possible mechanism was proposed based on the band structure of the n-n+ SrTiO3/Si heterojunction, and the observed electrical behaviors could be attributed to the modulation effect of the electric field reversal on the width of accumulation and the depletion region, as well as the height of potential of the n-n+ junction formed at the STO/Si interface. Moreover, oxygen vacancies are also indicated to play a crucial role in causing insulator to semiconductor transition. These results open the way to potential application in future microelectronic devices based on perovskite oxide layers on conventional semiconductors.
Luminescent Photoelectrochemical Cells. 6. Spatial Aspects of the Photoluminescence and Electroluminescence of Cadmium Selenide Electrodes.

DTIC Science & Technology

1981-10-06

STRECKERT, J TONS, A B ELLIS N01478-C5633 UNCLASSI1FIED TRAS NL OFFICE OF NAVAL RESEARCH Contract No. N00014-78’-C-0633 Task No. NR 051-690 TECHNICAL REPORT...of Wisconsin NR 051-690 Madison, Wisconsin 53706 II. CONTROLLING OFFICE NAME AND ADDRESS 12. REPORT DATE *Office of Naval Research /Chemistry Program...identify by block number) Samples of single-crystal, n-type CdSe emit when excited with ultraband gap excitation. The emission band (Xmax 񔊐 nm) is
Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2015-12-01

Hole injection into silicon dioxide (SiO2) films (8-40 nm thick) is investigated for the first time during substrate electron injection via Fowler-Nordheim (FN) tunneling in n-type 4H- and 6H-SiC (silicon carbide) based metal-oxide-semiconductor (MOS) structures at a wide range of temperatures (T) between 298 and 598 K and oxide electric fields Eox from 6 to 10 MV/cm. Holes are generated in heavily doped n-type polycrystalline silicon (n+ -polySi) gate serving as the anode as well as in the bulk silicon dioxide (SiO2) film via hot-electron initiated band-to-band ionization (BTBI). In absence of oxide trapped charges, it is shown that at a given temperature, the hole injection rates from either of the above two mechanisms are higher in n-4H-SiC MOS devices than those in n-6H-SiC MOS structures when compared at a given Eox and SiO2 thickness (tox). On the other hand, relative to n-4H-SiC devices, n-6H-SiC structures exhibit higher hole injection rates for a given tox during substrate electron injection at a given FN current density je,FN throughout the temperature range studied here. These two observations clearly reveal that the substrate material (n-6H-SiC and n-4H-SiC) dependencies on time-to-breakdown (tBD) or injected charge (electron) to breakdown (QBD) of the SiO2 film depend on the mode of FN injections (constant field/voltage and current) from the substrate which is further verified from the rigorous device simulation as well.
A multifunctional biphasic water splitting catalyst tailored for integration with high-performance semiconductor photoanodes

NASA Astrophysics Data System (ADS)

Yang, Jinhui; Cooper, Jason K.; Toma, Francesca M.; Walczak, Karl A.; Favaro, Marco; Beeman, Jeffrey W.; Hess, Lucas H.; Wang, Cheng; Zhu, Chenhui; Gul, Sheraz; Yano, Junko; Kisielowski, Christian; Schwartzberg, Adam; Sharp, Ian D.

2017-03-01

Artificial photosystems are advanced by the development of conformal catalytic materials that promote desired chemical transformations, while also maintaining stability and minimizing parasitic light absorption for integration on surfaces of semiconductor light absorbers. Here, we demonstrate that multifunctional, nanoscale catalysts that enable high-performance photoelectrochemical energy conversion can be engineered by plasma-enhanced atomic layer deposition. The collective properties of tailored Co3O4/Co(OH)2 thin films simultaneously provide high activity for water splitting, permit efficient interfacial charge transport from semiconductor substrates, and enhance durability of chemically sensitive interfaces. These films comprise compact and continuous nanocrystalline Co3O4 spinel that is impervious to phase transformation and impermeable to ions, thereby providing effective protection of the underlying substrate. Moreover, a secondary phase of structurally disordered and chemically labile Co(OH)2 is introduced to ensure a high concentration of catalytically active sites. Application of this coating to photovoltaic p+n-Si junctions yields best reported performance characteristics for crystalline Si photoanodes.
Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions

NASA Technical Reports Server (NTRS)

Tufts, Bruce J.; Casagrande, Louis G.; Lewis, Nathan S.; Grunthaner, Frank J.

1990-01-01

Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution X-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.
Magnetic Field Effects on Photoelectrochemical Reactions of Porphyrin-Viologen Linked Compounds in an Ionic Liquid

NASA Astrophysics Data System (ADS)

Tahara, Hironobu; Yonemura, Hiroaki; Harada, Satoko; Yamada, Sunao

2011-08-01

Magnetic field effects (MFEs) on photoelectrochemical reactions of three porphyrin-viologen linked compounds with various methylene groups [ZnP(n)V (n=4,6,8)] were examined in 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM][BF4]) as an ionic liquid using a two-electrode cell. Stable anodic photocurrents are produced by irradiating ZnP(n)V (n=4,6,8) in [BMIM][BF4] with visible light, and the MFEs on photocurrents were clearly observed in ZnP(n)V (n=4,6,8). The MFEs on photocurrents increase with magnetic field for lower magnetic fields (B ≤200 mT) and are constant for higher magnetic fields (B > 200 mT). The magnitude of the MFEs in ZnP(n)V (n=6,8) are larger than that in ZnP(4)V. The MFEs can be explained by radical pair mechanism. The magnitude of the MFEs is larger than those in electrodes modified with ZnP(n)V (n=4,6,8) as Langmuir-Blodgett films. The results are most likely attributable to the properties of [BMIM][BF4] and the mechanism of photoelectrochemical reaction.
Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, H. W.; Yang, J.; Li, Y. H.

2015-03-02

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiO{sub x}/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V{sub bi} = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.
Band gap narrowing in n-type and p-type 3C-, 2H-, 4H-, 6H-SiC, and Si

NASA Astrophysics Data System (ADS)

Persson, C.; Lindefelt, U.; Sernelius, B. E.

1999-10-01

Doping-induced energy shifts of the conduction band minimum and the valence band maximum have been calculated for n-type and p-type 3C-, 2H-, 4H-, 6H-SiC, and Si. The narrowing of the fundamental band gap and of the optical band gap are presented as functions of ionized impurity concentration. The calculations go beyond the common parabolic treatments of the ground state energy dispersion by using energy dispersion and overlap integrals from band structure calculations. The nonparabolic valence band curvatures influence strongly the energy shifts especially in p-type materials. The utilized method is based on a zero-temperature Green's function formalism within the random phase approximation with local field correction according to Hubbard. We have parametrized the shifts of the conduction and the valence bands and made comparisons with recently published results from a semi-empirical model.
Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface

NASA Astrophysics Data System (ADS)

Chokawa, Kenta; Narita, Tetsuo; Kikuta, Daigo; Kachi, Tetsu; Shiozaki, Koji; Shiraishi, Kenji

2018-03-01

We examine the energy band diagram at the n-type GaN (n-GaN)/SiO2 interface and show that electron transfer from n-GaN to SiO2 leads to the formation of negatively charged oxygen vacancies in the SiO2, resulting in the self-formation of an n-GaN/Ga2O3/SiO2 structure. On the other hand, it is difficult to automatically form Ga2O3 at a p-type GaN (p-GaN)/SiO2 interface. This electron-transfer-induced self-formation of Ga2O3 causes an interface dipole, which leads to band bending, resulting in an increase in the conduction band offset between GaN and SiO2. Accordingly, by using this self-forming phenomenon, GaN MOSFETs with lower leakage current can be realized.
Fabrication of n-type Si nanostructures by direct nanoimprinting with liquid-Si ink

NASA Astrophysics Data System (ADS)

Takagishi, Hideyuki; Masuda, Takashi; Yamazaki, Ken; Shimoda, Tatsuya

2018-01-01

Nanostructures of n-type amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) with a height of 270 nm and line widths of 110-165 nm were fabricated directly onto a substrate through a simple imprinting process that does not require vacuum conditions or photolithography. The n-type Liquid-Si ink was synthesized via photopolymerization of cyclopentasilane (Si5H10) and white phosphorus (P4). By raising the temperature from 160 °C to 200 °C during the nanoimprinting process, well-defined angular patterns were fabricated without any cracking, peeling, or deflections. After the nanoimprinting process, a-Si was produced by heating the nanostructures at 400°C-700 °C, and poly-Si was produced by heating at 800 °C. The dopant P diffuses uniformly in the Si films, and its concentration can be controlled by varying the concentration of P4 in the ink. The specific resistance of the n-type poly-Si pattern was 7.0 × 10-3Ω ṡ cm, which is comparable to the specific resistance of flat n-type poly-Si films.
Characterization of silicon heterojunctions for solar cells

PubMed Central

2011-01-01

Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision. PMID:21711658
Solar Water Splitting Utilizing a SiC Photocathode, a BiVO4 Photoanode, and a Perovskite Solar Cell.

PubMed

Iwase, Akihide; Kudo, Akihiko; Numata, Youhei; Ikegami, Masashi; Miyasaka, Tsutomu; Ichikawa, Naoto; Kato, Masashi; Hashimoto, Hideki; Inoue, Haruo; Ishitani, Osamu; Tamiaki, Hitoshi

2017-11-23

We have successfully demonstrated solar water splitting using a newly fabricated photoelectrochemical system with a Pt-loaded SiC photocathode, a CoO x -loaded BiVO 4 photoanode, and a perovskite solar cell. Detection of the evolved H 2 and O 2 with a 100 % Faradaic efficiency indicates that the observed photocurrent was used for water splitting. The solar-to-hydrogen (STH) efficiency was 0.55 % under no additional bias conditions. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Formation of Fe2SiO4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties

NASA Astrophysics Data System (ADS)

Choi, Jeongyong; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Duong, Anh Tuan; Cho, Sunglae

2018-03-01

Fe2SiO4 thin films have been grown on n-type, p-type and semi-insulating Si(100) substrates by molecular beam epitaxy. When Fe-O thin films were deposited on Si(100) substrate at 300 °C, the film reacted with Si, resulting in a Fe2SiO4 film because of the high reactivity between Fe and Si. The electrical resistance and Seebeck coefficient of Fe2SiO4 thin films grown were different in different doping states. On n-type and p-type Si(100), the electrical resistance decreased suddenly and increased again at 350 and 250 K, respectively, while on semi-insulating Si(100), it exhibited typical semiconducting resistance behavior. We observed similar crossovers at 350 and 250 K in temperature dependent Seebeck coefficients on n-type and p-type Si(100), respectively. These results suggest that the measured electrical and thermoelectric properties originate from Si substrate.
Synthesis and characterization of silicon nanowire arrays for photovoltaic applications

NASA Astrophysics Data System (ADS)

Eichfeld, Sarah M.

The overall objective of this thesis was the development of processes for the fabrication of radial p-n silicon nanowires (SiNWs) using bottom-up nanowire growth techniques on silicon and glass substrates. Vapor-liquid-solid (VLS) growth was carried out on Si(111) substrates using SiCl4 as the silicon precursor. Growth conditions including temperature, PSiCl4, PH2, and position were investigated to determine the optimum growth conditions for epitaxially oriented silicon nanowire arrays. The experiments revealed that the growth rate of the silicon nanowires exhibits a maximum as a function of PSiCl4 and P H2. Gas phase equilibrium calculations were used in conjunction with a mass transport model to explain the experimental data. The modeling results demonstrate a similar maximum in the mass of solid silicon predicted to form as a function of PSiCl4 and PH2, which results from a change in the gas phase concentration of SiHxCly and SiClx species. This results in a shift in the process from growth to etching with increasing PSiCl4. In general, for the atmospheric pressure conditions employed in this study, growth at higher temperatures >1000°C and higher SiCl4 concentrations gave the best results. The growth of silicon nanowire arrays on anodized alumina (AAO)-coated glass substrates was also investigated. Glass will not hold up to the high temperatures required for Si nanowire growth with SiCl4 so SiH 4 was used as the Si precursor instead. Initial studies were carried out to measure the resistivity of p-type and n-type silicon nanowires grown in freestanding AAO membranes. A series of nanowire samples were grown in which the doping and the nanowire length inside the membrane were varied. Circular metal contacts were deposited on the top surface of the membranes and the resistance of the nanowire arrays was measured. The measured resistance versus nanowire length was plotted and the nanowire resistivity was extracted from the slope. The resistivity of the silicon nanowires grown in the AAO membranes was then compared to the resistivity of silicon nanowires grown on Si and measured using single wire four-point measurements. It was determined that the undoped silicon nanowires grown in AAO have a lower resistivity compared to nanowires grown on Si substrates. This indicates the presence of an unintentional acceptor. The resistivity of the silicon nanowires was found to change as the dopant/SiH4 ratio was varied during growth. The growth and doping conditions developed from this study were then used to fabricate p-type SiNW arrays on the AAO coated glass substrates. The final investigation in this thesis focused on the development of a process for radial coating of an n-type Si layer on the p-type Si nanowires. While prior studies demonstrated the fabrication of polycrystalline n-type Si shell layers on Si nanowires, an epitaxial n-type Si shell layer is ultimately of interest to obtain a high quality p-n interface. Initial n-type Si thin film deposition studies were carried out on sapphire substrates using SiH 4 as the silicon precursor to investigate the effect of growth conditions on thickness uniformity, growth rate and doping level. High growth temperatures (>900°C) are generally desired for achieving epitaxial growth; however, gas phase depletion of the SiH4 source along the length of the reactor resulted in poor thickness uniformity. To improve the uniformity, the substrate was shifted closer to the gas inlet at higher temperatures (950°C) and the total flow of gas through the reactor was increased to 200 sccm. A series of n-type doping experiments were also carried out. Hall measurements indicated n-type behavior and four-point measurements yielded a change in resistivity based on the PH3/SiH4 ratio. Pre-coating sample preparation was determined to be important for achieving a high quality Si shell layer. Since Au can diffuse down the sides of the nanowire during sample cooldown after growth, the Au tips were etched away prior to shell layer deposition. The effect of deposition temperature on the structural properties of the shell layer deposited on the VLS grown SiNWs was investigated. TEM revealed that the n-type Si shells were polycrystalline at low temperatures (650°C) but were single crystal at 950°C. SiNW samples grown on glass were also coated; however, due to the temperature constraints, the maximum temperature used was 650°C and therefore the n-type Si shells were polycrystalline. (Abstract shortened by UMI.)
Semiconducting Organic-Inorganic Nanodots Heterojunctions: Platforms for General Photoelectrochemical Bioanalysis Application.

PubMed

Wang, Qian; Ruan, Yi-Fan; Zhao, Wei-Wei; Lin, Peng; Xu, Jing-Juan; Chen, Hong-Yuan

2018-03-20

In this study, semiconducting organic polymer dots (Pdots) and inorganic quantum dots (Qdots) were first utilized to construct the organic-inorganic nanodots heterojunction for the photoelectrochemical (PEC) bioanalysis application. Specifically, n-type CdS Qdots, p-type CdTe Qdots, and tetraphenylporphyrin (TPP)-doped poly[(9,9-dioctylfluorenyl-2,7-diyl)- co-(1,4-benzo-{2,1',3}-thiadazole)] (PFBT) Pdots were fabricated, and their energy levels, that is, their valence band (VB)/conduction band (CB) or lowest unoccupied molecular orbital (LUMO)/highest occupied molecular orbital (HOMO) values, were also determined. Then, these nanodots were integrated to construct four types of p-n and p-p organic-inorganic nanodots heterojunctions, that is, CdS Qdots/TPP-doped PFBT Pdots, TPP-doped PFBT Pdots/CdS Qdots, CdTe Qdots/TPP-doped PFBT Pdots, and TPP-doped PFBT Pdots/CdTe Qdots, on the transparent glass electrode. Upon light irradiation, four heterojunctions exhibited different PEC behaviors with some having prominent photocurrent enhancement. With the model molecule l-cysteine (l-cys) as target, the proposed PEC sensor exhibited good performances. In brief, this work presents the first semiconducting organic-inorganic nanodots heterojunction for PEC bioanalysis application, which could be easily used as a general platform for future PEC bioanalysis building. Besides, it is expected to inspire more interest in the design, development, and implementation of various organic-inorganic heterojunctions for advanced PEC bioanalysis in the future.
Efficient and stable MoS2 catalyst integrated on Si photocathodes by photoreduction and post-annealing for water splitting

NASA Astrophysics Data System (ADS)

Zhou, Jungui; Dai, Song; Dong, Wen; Su, Xiaodong; Fang, Liang; Zheng, Fengang; Wang, Xiongdong; Shen, Mingrong

2016-05-01

MoS2 has been studied as an efficient and cheap hydrogen evolution reaction (HER) catalyst; however, its effective integration with a photocathode remains a challenge. Here, crystalline MoS2 catalyst was deposited on top of a ˜2 nm Al2O3 protected n+p-Si photocathode using a simple photoreduction method following a post-annealing. The amount of MoS2 is optimized for HER of the photocathode, balanced between its catalytic effect and light absorption. High efficiency with 0.35 V onset potential vs. reversible hydrogen electrode and 34.5 mA/cm2 saturated photocurrent and high stability after 2 min ultrasonication or under 40 h continuous HER were observed. Such properties are much superior to the corresponding photocathodes coated by the traditional electrodeposited amorphous MoS2. Furthermore, the MoS2 layer is also an effective support for Pt nanoparticles with considerable reduction in the Pt amount while keeping the photoelectrochemical reactivity. This study indicates that the cheap-made MoS2 can be an efficient and stable HER catalyst for the Si photocathode.
Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

2015-10-01

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.
Development of Tough, Strong, and Pest-Resistant MoSi2-(Beta)Si3N4 Composites for High-Temperature Structural Applications

NASA Technical Reports Server (NTRS)

Hebsur, M. G.; Choi, S. R.; Whittenberger, J. D.; Salem, J. A.; Noebe, R. D.

2001-01-01

A new MoSi2-base composite was developed that contains in-situ reinforcement of whisker-type beta-Si3N4 grains in a MoSi2 matrix. The advantages of this in-situ reinforced MoSi2-Si3N4 are lower density, higher fracture toughness and better strength than typical MoSi2 alloys, combined with excellent environmental and pest resistance. The average fracture toughness of the in-situ reinforced material determined by one technique was 12.2 MPa.m(exp 1/2) compared to 4.9 to 5.5 MPa.m(exp 1/2) for similar materials with the exception that the beta-Si3N4 had a blocky morphology as opposed to the whisker-like morphology typical of the in-situ toughened material. This MoSi2-(beta)Si3N4 was also resistant to pesting at intermediate temperatures (400 to 600 C) even when precracked or under applied load; conditions that would quickly reduce typical MoSi2 alloys to oxidized powder.
Nano-engineering of p-n CuFeO2-ZnO heterojunction photoanode with improved light absorption and charge collection for photoelectrochemical water oxidation

NASA Astrophysics Data System (ADS)

Karmakar, Keshab; Sarkar, Ayan; Mandal, Kalyan; Gopal Khan, Gobinda

2017-08-01

The effective utilization of abundant visible solar light for photoelectrochemical water splitting is a green approach for energy harvesting, to reduce the enormous rise of carbon content in the atmosphere. Here, a novel efficient design strategy for p-n type nano-heterojunction photoanodes is demonstrated, with the goal of improving water splitting efficiency by growing low band gap p-CuFeO2 nanolayers on n-ZnO nanorods by an easy and scalable electrochemical route. The photoconversion efficiency of p-n CuFeO2/ZnO photoanodes is found to be ˜450% higher than that of pristine ZnO nanorod electrodes under visible solar light illumination (λ > 420 nm, intensity 10 mW cm-2). The p-n CuFeO2/ZnO nano-engineering not only boosts the visible light absorption but also resolves limitations regarding effective charge carrier separation and transportation due to interfacial band alignment. This photoanode also shows remarkably enhanced stability, where the formation of p-n nano-heterojunction enhances the easy migration of holes to the electrode/electrolyte interface, and of electrons to the counter electrode (Pt) for hydrogen generation. Therefore, this work demonstrates that p-n nano-engineering is a potential strategy to design light-harvesting electrodes for water splitting and clean energy generation.

Automatic illumination compensation device based on a photoelectrochemical biofuel cell driven by visible light

NASA Astrophysics Data System (ADS)

Yu, You; Han, Yanchao; Xu, Miao; Zhang, Lingling; Dong, Shaojun

2016-04-01

Inverted illumination compensation is important in energy-saving projects, artificial photosynthesis and some forms of agriculture, such as hydroponics. However, only a few illumination adjustments based on self-powered biodetectors that quantitatively detect the intensity of visible light have been reported. We constructed an automatic illumination compensation device based on a photoelectrochemical biofuel cell (PBFC) driven by visible light. The PBFC consisted of a glucose dehydrogenase modified bioanode and a p-type semiconductor cuprous oxide photocathode. The PBFC had a high power output of 161.4 μW cm-2 and an open circuit potential that responded rapidly to visible light. It adjusted the amount of illumination inversely irrespective of how the external illumination was changed. This rational design of utilizing PBFCs provides new insights into automatic light adjustable devices and may be of benefit to intelligent applications.Inverted illumination compensation is important in energy-saving projects, artificial photosynthesis and some forms of agriculture, such as hydroponics. However, only a few illumination adjustments based on self-powered biodetectors that quantitatively detect the intensity of visible light have been reported. We constructed an automatic illumination compensation device based on a photoelectrochemical biofuel cell (PBFC) driven by visible light. The PBFC consisted of a glucose dehydrogenase modified bioanode and a p-type semiconductor cuprous oxide photocathode. The PBFC had a high power output of 161.4 μW cm-2 and an open circuit potential that responded rapidly to visible light. It adjusted the amount of illumination inversely irrespective of how the external illumination was changed. This rational design of utilizing PBFCs provides new insights into automatic light adjustable devices and may be of benefit to intelligent applications. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00759g
In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

NASA Astrophysics Data System (ADS)

Phuan, Yi Wen; Ibrahim, Elyas; Chong, Meng Nan; Zhu, Tao; Lee, Byeong-Kyu; Ocon, Joey D.; Chan, Eng Seng

2017-01-01

Nanostructured nickel oxide-hematite (NiO/α-Fe2O3) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni2+ ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.
Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dahal, R.; Pantha, B. N.; Li, J.

2014-04-07

InGaN alloys are very promising for solar water splitting because they have direct bandgaps that cover almost the whole solar spectrum. The demonstration of direct solar-to-fuel conversion without external bias with the sunlight being the only energy input would pave the way for realizing photoelectrochemical (PEC) production of hydrogen by using InGaN. A monolithic solar-PEC cell based on InGaN/GaN multiple quantum wells capable to directly generate hydrogen gas under zero bias via solar water splitting is reported. Under the irradiation by a simulated sunlight (1-sun with 100 mW/cm{sup 2}), a 1.5% solar-to-fuel conversion efficiency has been achieved under zero bias,more » setting a fresh benchmark of employing III-nitrides for artificial photosynthesis. Time dependent hydrogen gas production photocurrent measured over a prolonged period (measured for 7 days) revealed an excellent chemical stability of InGaN in aqueous solution of hydrobromic acid. The results provide insights into the architecture design of using InGaN for artificial photosynthesis to provide usable clean fuel (hydrogen gas) with the sunlight being the only energy input.« less
Present status of solid state photoelectrochemical solar cells and dye sensitized solar cells using PEO-based polymer electrolytes

NASA Astrophysics Data System (ADS)

Singh, Pramod Kumar; Nagarale, R. K.; Pandey, S. P.; Rhee, H. W.; Bhattacharya, Bhaskar

2011-06-01

Due to energy crises in the future, much effort is being directed towards alternate sources. Solar energy is accepted as a novel substitute for conventional sources of energy. Out of the long list of various types of solar cells available on the market, solid state photoelectrochemical solar cells (SSPECs) and dye sensitized solar cells (DSSCs) are proposed as an alternative to costly crystalline solar cell. This review provides a common platform for SSPECs and DSSCs using polymer electrolyte, particularly on polyethylene oxide (PEO)-based polymer electrolytes. Due to numerous advantageous properties of PEO, it is frequently used as an electrolyte in both SSPECs as well as DSSCs. In DSSCs, so far high efficiency (more than 11%) has been obtained only by using volatile liquid electrolyte, which suffers many disadvantages, such as corrosion, leakage and evaporation. The PEO-based solid polymer proves its importance and could be used to solve the problems stated above. The recent developments in SSPECs and DSSCs using modified PEO electrolytes by adding nano size inorganic fillers, blending with low molecular weight polymers and ionic liquid (IL) are discussed in detail. The role of ionic liquid in modifying the electrical, structural and photoelectrochemical properties of PEO polymer electrolytes is also described.
Potential thermoelectric material open framework Si24 from a first-principles study

NASA Astrophysics Data System (ADS)

Ouyang, Tao; Zhang, Pei; Xiao, Huaping; Tang, Chao; Li, Jin; He, Chaoyu; Zhong, Jianxin

2017-10-01

Open framework Si24 is a new synthesis cage-like silicon allotrope with a quasi-direct bandgap and predicted to exhibit outstanding adsorption efficiency, foreshowing the potential applications in the photovoltaic community. In this paper, the thermoelectric property of such new Si structures is investigated by combining first-principles calculation and semiclassical Boltzmann transport theory. The calculations show that the Si24 possesses a superb Seebeck coefficient, and obviously anisotropic electronic conductivity. Owing to more energy extremums existing in the conduction band region, the power factor of Si24 in the n-type doping is always better than that in p-type samples. Anisotropic phonon transport property is observed as well in Si24 with average lattice thermal conductivity of 45.35 W m-1 K-1 at room temperature. Based on the electron relaxation time estimated from the experiment, the thermoelectric figure of merit of Si24 is found to be as high as 0.69 (n-type doping at 700 K) and 0.51 (p-type doping at 700 K) along the xx crystal direction, which is about two orders of magnitude larger than that of diamond Si (d-Si). The findings presented in this work shed light on the thermoelectric performance of Si24 and qualify that such new Si allotrope is a promising platform for achieving the recombination of photovoltaic and thermoelectric technologies together.
High Velocity Burner Rig Oxidation and Thermal Fatigue Behavior of Si3N4- and SiC Base Ceramics to 1370 Deg C

NASA Technical Reports Server (NTRS)

Sanders, W. A.; Johnston, J. R.

1978-01-01

One SiC material and three Si3N4 materials including hot-pressed Si3N4 as a baseline were exposed in a Mach-1-gas-velocity burner rig simulating a turbine engine environment. Criteria for the materials selection were: potential for gas-turbine usage, near-net-shape fabricability and commercial/domestic availability. Cyclic exposures of test vanes up to 250 cycles (50 hr at temperature) were at leading-edge temperatures to 1370 C. Materials and batches were compared as to weight change, surface change, fluorescent penetrant inspection, and thermal fatigue behavior. Hot-pressed Si3N4 survived the test to 1370 C with slight weight losses. Two types of reaction-sintered Si3N4 displayed high weight gains and considerable weight-change variability, with one material exhibiting superior thermal fatigue behavior. A siliconized SiC showed slight weight gains, but considerable batch variability in thermal fatigue.
Morphology and FT IR spectra of porous silicon

NASA Astrophysics Data System (ADS)

Kopani, Martin; Mikula, Milan; Kosnac, Daniel; Gregus, Jan; Pincik, Emil

2017-12-01

The morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHy complexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHy and SiFxHy complexes in the layer.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Thi, Trinh Cham, E-mail: s1240009@jaist.ac.jp; Koyama, Koichi; Ohdaira, Keisuke

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN{sub x}) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH{sub 3} molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN{sub x}/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN{sub x} passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRVmore » is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN{sub x} films. The outstanding results obtained imply that SiN{sub x}/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.« less
Tris(hydroxymethyl)aminomethane photooxidation on titania based photoanodes and its implication for photoelectrochemical biofuel cells

NASA Astrophysics Data System (ADS)

Filipiak, Marcin S.; Zloczewska, Adrianna; Grzeskowiak, Piotr; Lynch, Robert; Jönsson-Niedziolka, Martin

2015-09-01

In many photoelectrochemical biofuel cells tris(hydroxymethyl)aminomethane (TRIS) is used a buffer. We show that TRIS can be readily photooxidised on titania electrodes. Combining a titania nanotube photoanode in a TRIS buffer with an air-breathing enzymatic biocathode we construct a relatively efficient photoelectrochemical biofuel cell using the TRIS buffer as fuel. This shows both the prospect of using air-breathing bio-cathodes in this kind of cells, but more importantly, shows the need for caution when using TRIS as buffer in photoelectrochemical applications.
Microcrystalline silicon growth for heterojunction solar cells

NASA Technical Reports Server (NTRS)

Iles, P. A.; Leung, D. C.; Fang, P. H.

1983-01-01

A total of sixteen runs of e-beam vacuum deposition of p type microcrystalline Si (m-Si) films were attempted on n type or p-n junction single crystalline Si (C-Si) substrates. The m-Si film thickness varied from .15 to .7 um and metal contacts were deposited after plasma hydrogenation. The p-m-Si on n-c-Si structure had a Voc of up to 490 m V while no Voc improvements were observed in the p-m-Si on p-n C-Si structure against p-n controls. Both CFF and Jsc were lower than control. Possible problem areas were interfaced between m-Si and C-si and the back contacts due to lack of sintering for fear of dehydrogenation.
Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures

NASA Astrophysics Data System (ADS)

Volkov, N. V.; Tarasov, A. S.; Rautskii, M. V.; Lukyanenko, A. V.; Bondarev, I. A.; Varnakov, S. N.; Ovchinnikov, S. G.

2018-04-01

Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.
Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2015-07-21

Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.
Nanostructured hematite for photoelectrochemical water splitting

NASA Astrophysics Data System (ADS)

Ling, Yichuan

Solar water splitting is an environmentally friendly reaction of producing hydrogen gas. Since Honda and Fujishima first demonstrated solar water splitting in 1972 by using semiconductor titanium dioxide (TiO2) as photoanode in a photoelectrochemical (PEC) cell, extensive efforts have been invested into improving the solar-to-hydrogen (STH) conversion efficiency and lower the production cost of photoelectrochemical devices. In the last few years, hematite (alpha-Fe2O3) nanostructures have been extensively studied as photoanodes for PEC water splitting. Although nanostructured hematite can improve its photoelectrochemical water splitting performance to some extent, by increasing active sites for water oxidation and shortening photogenerated hole path length to semiconductor/electrolyte interface, the photoactivity of pristine hematite nanostructures is still limited by a number of factors, such as poor electrical conductivities and slow oxygen evolution reaction kinetics. Previous studies have shown that tin (Sn) as an n-type dopant can substantially enhance the photoactivity of hematite photoanodes by modifying their optical and electrical properties. In this thesis, I will first demonstrate an unintentional Sn-doping method via high temperature annealing of hematite nanowires grown on fluorine-doped tin oxide (FTO) substrate to enhance the donor density. In addition to introducing extrinsic dopants into semiconductors, the carrier densities of hematite can also be enhanced by creating intrinsic defects. Oxygen vacancies function as shallow donors for a number of hematite. In this regard, I have investigated the influence of oxygen content on thermal decomposition of FeOOH to induce oxygen vacancies in hematite. In the end, I have studied low temperature activation of hematite nanostructures.
Site-Competition Epitaxy for N-Type and P-Type Dopant Control in CVD Sic Epilayers

NASA Technical Reports Server (NTRS)

Larkin, D. J.

1995-01-01

The use of site-competition epitaxy, which is based on intentional variation of the Si/C ratio during epitaxy, has now been reproduced in numerous national and international laboratories. However, previous reports have only considered dopant incorporation control for epitaxy on the Si-face 6H-SiC(OOO1) substrates. Presented in this paper is the extension of this technique for control of phosphorous incorporation and also a comparison of controlled doping on C-face 6H-SiC(OOO1) versus Si-face 6H-SiC(OOO1) substrates for aluminum, boron, nitrogen, and phosphorous.
Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

NASA Astrophysics Data System (ADS)

Zhang, Runchun; Zhao, Beiji; Huang, Kai; You, Tiangui; Jia, Qi; Lin, Jiajie; Zhang, Shibin; Yan, Youquan; Yi, Ailun; Zhou, Min; Ou, Xin

2018-05-01

Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (111)-on-Si (100), were prepared by the smart-cut technique, which is consist of ion-slicing and wafer bonding. The precise calculation of the lattice strain of the transferred films without the epitaxial matching relationship to the substrate was demonstrated based on X-ray diffraction (XRD) measurements. The XRD and Raman measurement results suggest that the transferred films possess single crystalline quality. With a chemical mechanical polishing (CMP) process, the surface roughness of the transferred thin films can be reduced from 5.57 nm to 0.30 nm. The 4-inch GaN thin film epitaxially grown on the as-prepared hybrid SOI of Si (111)-on-Si (100) by metalorganic chemical vapor deposition (MOCVD) is of improved quality with a full width at half maximum (FWHM) of 672.54 arcsec extracted from the XRD rocking curve and small surface roughness of 0.40 nm. The wafer-scale GaN on Si (111)-on-Si (100) can serve as a potential platform for the one chip integration of GaN-based high electron mobility transistors (HEMT) or photonics with the Si (100)-based complementary metal oxide semiconductor (CMOS).
Sensitization of Nanocrystalline Metal Oxides with a Phosphonate-Functionalized Perylene Diimide for Photoelectrochemical Water Oxidation with a CoOx Catalyst.

PubMed

Kirner, Joel T; Finke, Richard G

2017-08-23

A planar organic thin film composed of a perylene diimide dye (N,N'-bis(phosphonomethyl)-3,4,9,10-perylenediimide, PMPDI) with photoelectrochemically deposited cobalt oxide (CoO x ) catalyst was previously shown to photoelectrochemically oxidize water (DOI: 10.1021/am405598w). Herein, the same PMPDI dye is studied for the sensitization of different nanostructured metal oxide (nano-MO x ) films in a dye-sensitized photoelectrochemical cell architecture. Dye adsorption kinetics and saturation decreases in the order TiO 2 > SnO 2 ≫ WO 3 . Despite highest initial dye loading on TiO 2 films, photocurrent with hydroquinone (H 2 Q) sacrificial reductant in pH 7 aqueous solution is much higher on SnO 2 films, likely due to a higher driving force for charge injection into the more positive conduction band energy of SnO 2 . Dyeing conditions and SnO 2 film thickness were subsequently optimized to achieve light-harvesting efficiency >99% at the λ max of the dye, and absorbed photon-to-current efficiency of 13% with H 2 Q, a 2-fold improvement over the previous thin-film architecture. A CoO x water-oxidation catalyst was photoelectrochemically deposited, allowing for photoelectrochemical water oxidation with a faradaic efficiency of 31 ± 7%, thus demonstrating the second example of a water-oxidizing, dye-sensitized photoelectrolysis cell composed entirely of earth-abundant materials. However, deposition of CoO x always results in lower photocurrent due to enhanced recombination between catalyst and photoinjected electrons in SnO 2 , as confirmed by open-circuit photovoltage measurements. Possible future studies to enhance photoanode performance are discussed, including alternative catalyst deposition strategies or structural derivatization of the perylene dye.
Sensitization of Nanocrystalline Metal Oxides with a Phosphonate-Functionalized Perylene Diimide for Photoelectrochemical Water Oxidation with a CoO x Catalyst

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirner, Joel T.; Finke, Richard G.

A planar organic thin film composed of a perylene diimide dye (N,N'-bis(phosphonomethyl)-3,4,9,10-perylenediimide, PMPDI) with photoelectrochemically deposited cobalt oxide (CoO x) catalyst was previously shown to photoelectrochemically oxidize water (DOI: 10.1021/am405598w). Herein, the same PMPDI dye is studied for the sensitization of different nanostructured metal oxide (nano-MO x) films in a dye-sensitized photoelectrochemical cell architecture. Dye adsorption kinetics and saturation decreases in the order TiO 2 > SnO 2 >> WO 3. Despite highest initial dye loading on TiO 2 films, photocurrent with hydroquinone (H 2Q) sacrificial reductant in pH 7 aqueous solution is much higher on SnO 2 films, likelymore » due to a higher driving force for charge injection into the more positive conduction band energy of SnO 2. Dyeing conditions and SnO 2 film thickness were subsequently optimized to achieve light-harvesting efficiency >99% at the λmax of the dye, and absorbed photon-to-current efficiency of 13% with H 2Q, a 2-fold improvement over the previous thin-film architecture. A CoO x water-oxidation catalyst was photoelectrochemically deposited, allowing for photoelectrochemical water oxidation with a faradaic efficiency of 31 ± 7%, thus demonstrating the second example of a water-oxidizing, dye-sensitized photoelectrolysis cell composed entirely of earth-abundant materials. However, deposition of CoO x always results in lower photocurrent due to enhanced recombination between catalyst and photoinjected electrons in SnO 2, as confirmed by open-circuit photovoltage measurements. Possible future studies to enhance photoanode performance are also discussed, including alternative catalyst deposition strategies or structural derivatization of the perylene dye.« less
Sensitization of Nanocrystalline Metal Oxides with a Phosphonate-Functionalized Perylene Diimide for Photoelectrochemical Water Oxidation with a CoO x Catalyst

DOE PAGES

Kirner, Joel T.; Finke, Richard G.

2017-07-20

A planar organic thin film composed of a perylene diimide dye (N,N'-bis(phosphonomethyl)-3,4,9,10-perylenediimide, PMPDI) with photoelectrochemically deposited cobalt oxide (CoO x) catalyst was previously shown to photoelectrochemically oxidize water (DOI: 10.1021/am405598w). Herein, the same PMPDI dye is studied for the sensitization of different nanostructured metal oxide (nano-MO x) films in a dye-sensitized photoelectrochemical cell architecture. Dye adsorption kinetics and saturation decreases in the order TiO 2 > SnO 2 >> WO 3. Despite highest initial dye loading on TiO 2 films, photocurrent with hydroquinone (H 2Q) sacrificial reductant in pH 7 aqueous solution is much higher on SnO 2 films, likelymore » due to a higher driving force for charge injection into the more positive conduction band energy of SnO 2. Dyeing conditions and SnO 2 film thickness were subsequently optimized to achieve light-harvesting efficiency >99% at the λmax of the dye, and absorbed photon-to-current efficiency of 13% with H 2Q, a 2-fold improvement over the previous thin-film architecture. A CoO x water-oxidation catalyst was photoelectrochemically deposited, allowing for photoelectrochemical water oxidation with a faradaic efficiency of 31 ± 7%, thus demonstrating the second example of a water-oxidizing, dye-sensitized photoelectrolysis cell composed entirely of earth-abundant materials. However, deposition of CoO x always results in lower photocurrent due to enhanced recombination between catalyst and photoinjected electrons in SnO 2, as confirmed by open-circuit photovoltage measurements. Possible future studies to enhance photoanode performance are also discussed, including alternative catalyst deposition strategies or structural derivatization of the perylene dye.« less
An anti-photocorrosive photoanode based on a CdS/NixSy@NF heterostructure for visible-light-driven water splitting

NASA Astrophysics Data System (ADS)

Zhang, Dantong; Liu, Lulu; Zhang, Lei; Qi, Kun; Zhang, Haiyan; Cui, Xiaoqiang

2017-10-01

Photoelectrochemical (PEC) water splitting holds promise for both sustainable energy generation and energy storage. CdS, a sulphide semiconductor possessing a narrow band gap (2.4 eV) and high photocatalytic activity, has been widely used to build photoanodes for PEC water splitting; however, it also suffers from photocorrosion under irradiation. An innovative method is presented here to significantly improve the stability of CdS photoanodes by constructing a p-n junction comprising CdS/NixSy on nickel foam (NF) via a one-pot hydrothermal method. The n-type CdS is surrounded by p-type NixSy serving as a fast and effective hole receiver of excess holes from CdS. More importantly, the CdS/NixSy shows significantly improved PEC stability compared to the pure CdS electrode, with ≈70% of the initial photocurrent retained after 2000 s of irradiation (>420 nm). This work provides a new insight into the fabrication of other p-n junction self-assembled photoanodes to simultaneously enhance charge separation and transport for efficient and stable solar fuel production.
Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode.

PubMed

Ahn, Jaehui; Mastro, Michael A; Klein, Paul B; Hite, Jennifer K; Feigelson, Boris; Eddy, Charles R; Kim, Jihyun

2011-10-24

The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction. © 2011 Optical Society of America

Showcasing electrode-electrolyte interfacial potential as a vital parameter in the hydrogen generation by metal oxides electrodes

NASA Astrophysics Data System (ADS)

Niveditha, C. V.; Nizamudeen, A. C.; Ramanarayanan, Rajita; Jabeen Fatima, M. J.; Swaminathan, Sindhu

2018-03-01

This investigation presents a new insight by experimentally demonstrating electrode-electrolyte interface potential that is flat band potential as a determinant in photoelectrochemical splitting of water. Two different metal oxides namely n type, nitrogen doped titania and p type copper oxides have been synthesized for the study. The flat band potential values of these oxide systems were obtained from Mott-Schottky analysis. The obtained flat band potential is used as a marker to fix the working potential in water splitting experiment. To obtain optimum photocurrent a potential more positive than flatband is applied to n-type N-TiO2 and vice-versa for p-type Cu2O. The findings are well supported by I-t curves derived from chronoamperometric measurements. Finally the mechanisms behind interfacial potential dynamics have been discussed in this work.
CVD-Based Valence-Mending Passivation for Crystalline-Si Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Meng

2015-03-01

The objective of this project is to investigate a new surface passivation technique, valence-mending passivation, for its applications in crystalline-Si solar cells to achieve significant efficiency improvement and cost reduction. As the enabling technique, the project includes the development of chemical vapor deposition recipes to passivate textured Si(100) and multicrystalline-Si surfaces by sulfur and the characterization of the passivated Si surfaces, including thermal stability, Schottky barrier height, contact resistance and surface recombination. One important application is to replace the Ag finger electrode in Si cells with Al to reduce cost, by ~$0.1/Wp, and allow terawatt-scale deployment of crystalline-Si solar cells.more » These all-Al Si cells require a low-temperature metallization process for the Al electrode, to be compatible with valence-mending passivation and to prevent Al diffusion into n-type Si. Another application is to explore valence-mending passivation of grain boundaries in multicrystalline Si by diffusing sulfur into grain boundaries, to reduce the efficiency gas between monocrystalline-Si solar cells and multicrystalline-Si cells. The major accomplishments of this project include: 1) Demonstration of chemical vapor deposition processes for valence-mending passivation of both monocrystalline Si(100) and multicrystalline Si surfaces. Record Schottky barriers have been demonstrated, with the new record-low barrier of less than 0.08 eV between Al and sulfur-passivated n-type Si(100) and the new record-high barrier of 1.14 eV between Al and sulfur-passivated p-type Si(100). On the textured p-type monocrystalline Si(100) surface, the highest barrier with Al is 0.85 eV by valence-mending passivation. 2) Demonstration of a low-temperature metallization process for Al in crystalline-Si solar cells. The new metallization process is based on electroplating of Al in a room-temperature ionic liquid. The resistivity of the electroplated Al is ~7×10–6 ohm-cm, similar to that of screen-printed Ag. 3) Demonstration of two all-Al, Ag-free Si solar cells, with an electroplated Al front electrode and a screen-printed Al back electrode. One cell is an industrial p-type front-emitter cell, and the other is an n-type back-emitter cell. The efficiency of the p-type cell is close to 15%. This is an industrial cell and its efficiency is capped at ~18%. 4) Demonstration of grain boundary passivation by both hydrogen and sulfur using hydrogen sulfide (H2S). When the new grain boundary passivation is combined with Al2O3 surface passivation and post-annealing, the minority carrier lifetime in the p-type multicrystalline Si samples shows a significant improvement up to 68 fold. 5) In a side project, a simple green process is developed which is capable of recycling over 90% of the Si material in end-of-life crystalline-Si solar cells. The recycled Si meets the specifications for solar-grade Si and can be used as a new poly-Si feedstock for ingot growth.« less
Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Yan, Di; Bullock, James

2015-12-07

A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} formore » 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.« less
Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Guangtao; Ingenito, Andrea; Hameren, Nienke van

2016-01-18

Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySimore » was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (R{sub sh n-type} = 95 Ω/□ and R{sub sh p-type} = 120 Ω/□). An efficiency of 19.2% (V{sub oc} = 673 mV, J{sub sc} = 38.0 mA/cm{sup 2}, FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a V{sub OC} of 696 mV was also measured.« less
Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

NASA Astrophysics Data System (ADS)

Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

2018-03-01

The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.
Visible light photoelectrochemical aptasensor for adenosine detection based on CdS/PPy/g-C3N4 nanocomposites.

PubMed

Liu, Yixin; Ma, Hongmin; Zhang, Yong; Pang, Xuehui; Fan, Dawei; Wu, Dan; Wei, Qin

2016-12-15

In this work, a label-free photoelectrochemical (PEC) aptasensor was developed for adenosine detection based on CdS/PPy/g-C3N4 nanocomposites. The CdS/g-C3N4 heterojunction effectively prevented the photogenerated charges recombination of g-C3N4 and self-photocorrosion processes of CdS, improving photo-to-current conversion efficiency. The introduced polypyrrole (PPy) nanoparticles could lead to a more effective separation of photogenerated charges, thus resulting in a further increasing of photocurrent. The CdS/PPy/g-C3N4 was firstly employed as the photoactive materials for fabrication of aptasensor, and SH-aptamer was then adsorbed on the CdS/PPy/g-C3N4 modified electrodes through S-Cd bond. With increasing of adenosine concentration, the photocurrent decreased as the formation of SH-aptamer-adenosine bioaffinity complexes. Under optimal conditions, the PEC aptasensor had a sensitive response to adenosine in a linear range of 0.3nmolL(-1) to 200nmolL(-1) with a detection limit of 0.1nmolL(-1). Besides, the as-proposed aptasensor has also been applied in human serum samples analysis. The aptasensor exhibits high sensitivity and good stability, thus opening up a new promising PEC platform for some other small molecules analysis. Copyright © 2016 Elsevier B.V. All rights reserved.
Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

DOEpatents

Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

2016-03-01

Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.
Photoelectroreduction of Building-Block Chemicals.

PubMed

Chen, Fengjiao; Cui, Wei; Zhang, Jie; Wang, Yeyun; Zhou, Junhua; Hu, Yongpan; Li, Yanguang; Lee, Shuit-Tong

2017-06-12

Conventional photoelectrochemical cells utilize solar energy to drive the chemical conversion of water or CO 2 into useful chemical fuels. Such processes are confronted with general challenges, including the low intrinsic activities and inconvenient storage and transportation of their gaseous products. A photoelectrochemical approach is proposed to drive the reductive production of industrial building-block chemicals and demonstrate that succinic acid and glyoxylic acid can be readily synthesized on Si nanowire array photocathodes free of any cocatalyst and at room temperature. These photocathodes exhibit a positive onset potential, large saturation photocurrent density, high reaction selectivity, and excellent operation durability. They capitalize on the large photovoltage generated from the semiconductor/electrolyte junction to partially offset the required external bias, and thereby make this photoelectrosynthetic approach significantly more sustainable compared to traditional electrosynthesis. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si

NASA Astrophysics Data System (ADS)

Mahala, Pramila; Patel, Malkeshkumar; Gupta, Navneet; Kim, Joondong; Lee, Byung Ha

2018-05-01

Studying the performance limiting parameters of the Schottky device is an urgent issue, which are addressed herein by thermally stable silver nanowire (AgNW) embedded metal oxide/p-Si Schottky device. Temperature and bias dependent junction interfacial properties of AgNW-ITO/Si Schottky photoelectric device are reported. The current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T) and impedance analysis have been carried out in the high-temperature region. The ideality factor and barrier height of Schottky junction are assessed using I-V-T characteristics and thermionic emission, to reveal the decrease of ideality factor and increase of barrier height by the increasing of temperature. The extracted values of laterally homogeneous Schottky (ϕb) and ideality factor (n) are approximately 0.73 eV and 1.58, respectively. Series resistance (Rs) assessed using Cheung's method and found that it decreases with the increase of temperature. A linear response of Rs of AgNW-ITO/Si Schottky junction is observed with respect to change in forward bias, i.e. dRS/dV from 0 to 0.7 V is in the range of 36.12-36.43 Ω with a rate of 1.44 Ω/V. Impedance spectroscopy is used to study the effect of bias voltage and temperature on intrinsic Schottky properties which are responsible for photoconversion efficiency. These systematic analyses are useful for the AgNWs-embedding Si solar cells or photoelectrochemical cells.
Plasmonic resonance enhanced photoelectrochemical aptasensors based on g-C3N4/Bi2MoO6.

PubMed

Qiu, Zhenli; Shu, Jian; Tang, Dianping

2018-06-13

An in-depth exploration associated with the localized surface plasmon resonance (LSPR) effect for plasmonic photoelectrochemistry (PEC) is beneficial for the development of high-efficiency biosensors. A novel phenomenon on the LSPR between g-C3N4/Bi2MoO6 and gold nanoparticles is investigated in a PEC aptasensing system under ultraviolet and visible light irradiation.
Photoassisted electrolysis of water - Conversion of optical to chemical energy

NASA Technical Reports Server (NTRS)

Wrighton, M. S.; Bolts, J. M.; Kaiser, S. W.; Ellis, A. B.

1976-01-01

A description is given of devices, termed photoelectrochemical cells, which can, in principle, be used to directly convert light to fuels and/or electricity. The fundamental principles on which the photoelectrochemical cell is based are related to the observation that irradiation of a semiconductor electrode in an electrochemical cell can result in the flow of an electric current in the external circuit. Attention is given to the basic mechanisms involved, the energy conversion efficiency, the advantages of photoelectrochemical cells, and the results of investigations related to the study of energy conversion via photoelectrochemical cells.
Elevated nitrogen metabolism and nitric oxide production are involved in Arabidopsis resistance to acid rain.

PubMed

Qiao, Fang; Zhang, Xi-Min; Liu, Xiang; Chen, Juan; Hu, Wen-Jun; Liu, Ting-Wu; Liu, Ji-Yun; Zhu, Chun-Quan; Ghoto, Kabir; Zhu, Xue-Yi; Zheng, Hai-Lei

2018-06-01

Acid rain (AR) can induce great damages to plants and could be classified into different types according to the different SO 4 2- /NO 3 - ratio. However, the mechanism of plants' responding to different types of AR has not been elucidated clearly. Here, we found that nitric-rich simulated AR (N-SiAR) induced less leaves injury as lower necrosis percentage, better physiological parameters and reduced oxidative damage in the leaves of N-SiAR treated Arabidopsis thaliana compared with sulfate and nitrate mixed (SN-SiAR) or sulfuric-rich (S-SiAR) simulated AR treated ones. Of these three types of SiAR, N-SiAR treated Arabidopsis maintained the highest of nitrogen (N) content, nitrate reductase (NR) and nitrite reductase (NiR) activity as well as N metabolism related genes expression level. Nitric oxide (NO) content showed that N-SiAR treated seedlings had a higher NO level compared to SN-SiAR or S-SiAR treated ones. A series of NO production and elimination related reagents and three NO production-related mutants were used to further confirm the role of NO in regulating acid rain resistance in N-SiAR treated Arabidopsis seedlings. Taken together, we concluded that an elevated N metabolism and enhanced NO production are involved in the tolerance to different types of AR in Arabidopsis. Copyright © 2018 Elsevier Masson SAS. All rights reserved.
Photoelectrochemical CdSe/TiO2 nanotube array microsensor for high-resolution in-situ detection of dopamine.

PubMed

Qin, Caidie; Bai, Xue; Zhang, Yue; Gao, Kai

2018-05-03

A photoelectrochemical wire microelectrode was constructed based on the use of a TiO 2 nanotube array with electrochemically deposited CdSe semiconductor. A strongly amplified photocurrent is generated on the sensor surface. The microsensor has a response in the 0.05-20 μM dopamine (DA) concentration range and a 16.7 μM detection limit at a signal-to-noise ratio of 3. Sensitivity, recovery and reproducibility of the sensor were validated by detecting DA in spiked human urine, and satisfactory results were obtained. Graphical abstract Schematic of a sensitive photoelectrochemical microsensor based on CdSe modified TiO 2 nanotube array. The photoelectrochemical microsensor was successfully applied to the determination of dopamine in urine samples.
A multifunctional biphasic water splitting catalyst tailored for integration with high-performance semiconductor photoanodes

DOE PAGES

Yang, Jinhui; Cooper, Jason K.; Toma, Francesca M.; ...

2016-11-07

Artificial photosystems are advanced by the development of conformal catalytic materials that promote desired chemical transformations, while also maintaining stability and minimizing parasitic light absorption for integration on surfaces of semiconductor light absorbers. We demonstrate that multifunctional, nanoscale catalysts that enable high-performance photoelectrochemical energy conversion can be engineered by plasma-enhanced atomic layer deposition. The collective properties of tailored Co 3 O 4 /Co(OH) 2 thin films simultaneously provide high activity for water splitting, permit efficient interfacial charge transport from semiconductor substrates, and enhance durability of chemically sensitive interfaces. Furthermore, these films comprise compact and continuous nanocrystalline Co 3 O 4more » spinel that is impervious to phase transformation and impermeable to ions, thereby providing effective protection of the underlying substrate. Moreover, a secondary phase of structurally disordered and chemically labile Co(OH) 2 is introduced to ensure a high concentration of catalytically active sites. Application of this coating to photovoltaic p + n-Si junctions yields best reported performance characteristics for crystalline Si photoanodes.« less
High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.
A photoelectrochemical immunosensor for detection of α-fetoprotein based on Au-ZnO flower-rod heterostructures

NASA Astrophysics Data System (ADS)

Han, Zhizhong; Luo, Min; Chen, Li; Chen, Jinghua; Li, Chunyan

2017-04-01

In this work, a novel label free photoelectrochemical (PEC) immunosensor has been developed for the detection of α-fetoprotein (AFP). The immunosensor was based on Au-ZnO flower-rods (FRs) heterostructure, where Au nanoparticles (NPs) were firstly electrodeposited by cyclic voltammetry methods. Scanning electron microscopy (SEM), X-ray diffraction (XRD), Mott-Schottky plot (MS), UV-vis diffuse reflectance spectrum and fluorescence emission spectrum were used for the characterizations of Au-ZnO FRs. The results demonstrated that Au NPs not only obviously enhanced the visible light absorption of ZnO FRs due to surface plasmon resonance (SPR) but also improved the separation of photo-generated electron-hole pairs. Therefore, the photocurrent of Au-ZnO FRs was increased under simulated sunlight. The photocurrent was reduced after the specific antibody-antigen immune reaction. And the photocurrent decrement was linear with the logarithm of AFP antigen concentration in the range from 0.005 ng mL-1 to 50 ng mL-1 with a low detection limit of 0.56 pg mL-1 (S/N = 3). The PEC immunosensor also exhibited high anti-interference property and acceptable stability. This work would provide a promising photoelectrochemical strategy for the detection of other proteins in clinical diagnosis.
A novel photoelectrochemical biosensor for protein kinase activity assay based on phosphorylated graphite-like carbon nitride.

PubMed

Li, Xue; Zhou, Yunlei; Xu, Yan; Xu, Huijie; Wang, Minghui; Yin, Huanshun; Ai, Shiyun

2016-08-31

Protein kinases are general and significant regulators in the cell signaling pathway, and it is still greatly desired to achieve simple and quick kinase detection. Herein, we develop a simple and sensitive photoelectrochemical strategy for the detection of protein kinase activity based on the bond between phosphorylated peptide and phosphorylated graphite-like carbon nitride (P-g-C3N4) conjugates triggered by Zr(4+) ion coordination. Under optimal conditions, the increased photocurrent is proportional to the protein kinase A (PKA) concentration ranging from 0.05 to 50 U/mL with a detection limit of 0.077 U/mL. Moreover, this photoelectrochemical assay can be also applied to quantitative analysis of kinase inhibition. The results indicated that the IC50 value (inhibitor concentration producing 50% inhibitor) for ellagic acid was 9.1 μM. Moreover, the developed method is further applied to detect PKA activity in real samples, which contains serum from healthy person and gastric cancer patients and breast tissue from healthy person and breast cancer patients. Therefore, the established protocol provides a new and simple tool for assay of kinase activity and its inhibitors with low cost and high sensitivity. Copyright © 2016 Elsevier B.V. All rights reserved.
Enhancement in c-Si solar cells using 16 nm InN nanoparticles

NASA Astrophysics Data System (ADS)

Imtiaz Chowdhury, Farsad; Alnuaimi, Aaesha; Alkis, Sabri; Ortaç, Bülend; Aktürk, Selçuk; Alevli, Mustafa; Dietz, Nikolaus; Kemal Okyay, Ali; Nayfeh, Ammar

2016-05-01

In this work, 16 nm indium nitride (InN) nanoparticles (NPs) are used to increase the performance of thin-film c-Si HIT solar cells. InN NPs were spin-coated on top of an ITO layer of c-Si HIT solar cells. The c-Si HIT cell is a stack of 2 μm p type c-Si, 4-5 nm n type a-Si, 15 nm n+ type a-Si and 80 nm ITO grown on a p+ type Si substrate. On average, short circuit current density (Jsc) increases from 19.64 mA cm-2 to 21.54 mA cm-2 with a relative improvement of 9.67% and efficiency increases from 6.09% to 7.09% with a relative improvement of 16.42% due to the presence of InN NPs. Reflectance and internal/external quantum efficiency (IQE/EQE) of the devices were also measured. Peak EQE was found to increase from 74.1% to 81.3% and peak IQE increased from 93% to 98.6% for InN NPs coated c-Si HIT cells. Lower reflection of light due to light scattering is responsible for performance enhancement between 400-620 nm while downshifted photons are responsible for performance enhancement from 620 nm onwards.
Dye-sensitized PS-b-P2VP-templated nickel oxide films for photoelectrochemical applications

PubMed Central

Massin, Julien; Bräutigam, Maximilian; Kaeffer, Nicolas; Queyriaux, Nicolas; Field, Martin J.; Schacher, Felix H.; Popp, Jürgen; Chavarot-Kerlidou, Murielle; Dietzek, Benjamin; Artero, Vincent

2015-01-01

Moving from homogeneous water-splitting photocatalytic systems to photoelectrochemical devices requires the preparation and evaluation of novel p-type transparent conductive photoelectrode substrates. We report here on the sensitization of polystyrene-block-poly-(2-vinylpyridine) (PS-b-P2VP) diblock copolymer-templated NiO films with an organic push–pull dye. The potential of these new templated NiO film preparations for photoelectrochemical applications is compared with NiO material templated by F108 triblock copolymers. We conclude that NiO films are promising materials for the construction of dye-sensitized photocathodes to be inserted into photoelectrochemical (PEC) cells. However, a combined effort at the interface between materials science and molecular chemistry, ideally funded within a Global Artificial Photosynthesis Project, is still needed to improve the overall performance of the photoelectrodes and progress towards economically viable PEC devices. PMID:26052420
Dye-sensitized PS-b-P2VP-templated nickel oxide films for photoelectrochemical applications.

PubMed

Massin, Julien; Bräutigam, Maximilian; Kaeffer, Nicolas; Queyriaux, Nicolas; Field, Martin J; Schacher, Felix H; Popp, Jürgen; Chavarot-Kerlidou, Murielle; Dietzek, Benjamin; Artero, Vincent

2015-06-06

Moving from homogeneous water-splitting photocatalytic systems to photoelectrochemical devices requires the preparation and evaluation of novel p-type transparent conductive photoelectrode substrates. We report here on the sensitization of polystyrene-block-poly-(2-vinylpyridine) (PS-b-P2VP) diblock copolymer-templated NiO films with an organic push-pull dye. The potential of these new templated NiO film preparations for photoelectrochemical applications is compared with NiO material templated by F108 triblock copolymers. We conclude that NiO films are promising materials for the construction of dye-sensitized photocathodes to be inserted into photoelectrochemical (PEC) cells. However, a combined effort at the interface between materials science and molecular chemistry, ideally funded within a Global Artificial Photosynthesis Project, is still needed to improve the overall performance of the photoelectrodes and progress towards economically viable PEC devices.

A plasticized polymer-electrolyte-based photoelectrochemical solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mao, D.; Ibrahim, M.A.; Frank, A.J.

1998-01-01

A photoelectrochemical solar cell based on an n-GaAs/polymer-redox-electrolyte junction is reported. Di(ethylene glycol) ethyl ether acrylate containing ferrocene as a redox species and benzoin methyl ether as a photoinitiator is polymerized in situ. Propylene carbonate is used as a plasticizer to improve the conductivity of the polymer redox electrolyte. For thin (1 {micro}m) polymer electrolytes, the series resistance of the cell is negligible. However, the short-circuit photocurrent density of the cell at light intensities above 10 mW/cm{sup 2} is limited by mass transport of redox species within the polymer matrix. At a light intensity of 70 mW/cm{sup 2}, a moderatemore » light-to-electrical energy conversion efficiency (3.1%) is obtained. The interfacial charge-transfer properties of the cell in the dark and under illumination are studied.« less
Reactions of silicon-based ceramics in mixed oxidation chlorination environments

NASA Technical Reports Server (NTRS)

Marra, John E.; Kreidler, Eric R.; Jacobson, Nathan S.; Fox, Dennis S.

1988-01-01

The reaction of silicon-based ceramics with 2 percent Cl2/Ar and 1 percent Cl2/1 percent to 20 percent O2/Ar at 950 C was studied with thermogravimetric analysis and high-pressure mass spectrometry. Pure Si, SiO2, several types of SiC, and Si3N4 were examined. The primary corrosion products were SiCl4(g) and SiO2(s) with smaller amounts of volatile silicon oxychlorides. The reactions appear to occur by chlorine penetration of the SiO2 layer, and gas-phase diffusion of the silicon chlorides away from the sample appears to be rate limiting. Pure SiO2 shows very little reaction with Cl2, SiC with excess Si is more reactive than the other materials with Cl2, whereas SiC with excess carbon is more reactive than the other materials with Cl2/O2. Si3N4 shows very little reaction with Cl2. These differences are explained on the basis of thermodynamic and microstructural factors.
Nanostructured silicon ferromagnet collected by a permanent neodymium magnet.

PubMed

Okuno, Takahisa; Thürmer, Stephan; Kanoh, Hirofumi

2017-11-30

Nanostructured silicon (N-Si) was prepared by anodic electroetching of p-type silicon wafers. The obtained magnetic particles were separated by a permanent neodymium magnet as a magnetic nanostructured silicon (mN-Si). The N-Si and mN-Si exhibited different magnetic properties: the N-Si exhibited ferromagnetic-like behaviour, whereas the mN-Si exhibited superparamagnetic-like behaviour.
One Step Synthesis of a PerchlorinatedCyclohexasilane from Trichlorosilane: A Route to New Materials for Flexible Electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Philip Boudjouk

2010-03-27

The serendipitous discovery of tetradecachlorocyclohexasilane dianion 1 was recently reported by our group at NDSU. The dianion is isolated from a mixture of an amine template (pentaethyldiethylenetriamine, pedeta) and HSiCl{sub 3} as insoluble colorless crystals that are easily reduced to give cyclohexasilane (Si{sub 6}H{sub 12}) in high yields and purity. While the product Si{sub 6}H{sub 12} has been shown to be useful as a liquid silane precursor to a-Si:H rectifying diodes and field effect transistors, these initial studies show a non-uniform dopant distributions. The need for a homogeneous dopant has led our group to further develop the chemistry of cyclohexasilane.more » Toward that end, we have focused on the design of molecules that contain a single dopant moiety bound to one or more Si{sub 6} ring(s). New Si{sub 6}H{sub 11}E compounds (where E is an n-type or p-type dopant) are being investigated (eqs. 2, 3) and initial results will be reported including the isolation of chlorocyclohexasilane, Si{sub 6}H{sub 11}Cl. In addition, several different triamine ligand templates to for Si{sub 6}Cl{sub 14}{sup 2-} salts were investigated toward optimizing the yield and ease of isolation for both the salt and the product liquid silane. Cyclohexasilane (Si{sub 6}H{sub 12})-based inks have been used as liquid precursor to silicon-containing electronic materials. Spin-coating of Si{sub 6}H{sub 12}-based inks with subsequent UV light and/or thermal treatment yielded amorphous silicon (a-Si:H) films. Initial results demonstrated the formation of n-type and p-type a-Si that were used in heterojunction structures (i.e., thin a-Si films on heavily-doped Si wafer substrates). While present ink chemistries produce a-Si:H with a high resistivity (i.e., > 10{sup 6} {Omega}.cm), efforts are under development to address this limitation. Additionally, a new printing approach (i.e., collimated aerosol beam direct write, CAB-DW) was developed that allows the deposition of silane-based features with linewidths <10 {micro}m. Assuming silicon-based materials with good electrical properties will be developed, there may be significant cost advantages associated with the ability to controllably deposit the semiconductor in a metered fashion.« less
ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Miin-Jang; Yang, Jer-Ren; Shiojiri, Makoto

2012-07-01

We have investigated ZnO-based light-emitting diodes (LEDs) fabricated by atomic layer deposition (ALD), demonstrating that ALD is one of the noteworthy techniques to prepare high-quality ZnO required for ultraviolet (UV) photonic devices. Here, we review our recent investigations on different ZnO-based heterojunction LEDs such as n-ZnO/p-GaN LEDS, n-ZnO:Al/ZnO nanodots-SiO2 composite/p-GaN LEDS, n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN LEDs, n-ZnO:Al/i-ZnO/p-SiC(4H) LEDs, and also on ZnO-based nanostructures including ZnO quantum dots embedded in SiO2 nanoparticle layer, ZnO nanopillars on sapphire substrates, Al-doped ZnO films on sapphire substrate and highly (0 0 0 1)-oriented ZnO films on amorphous glass substrate. The latest investigation also demonstrated p-type ZnO:P films prepared on amorphous silica substrates, which allow us to fabricate ZnO-based homojunction LEDs. These devices and structures were studied by x-ray diffraction and various analytical electron microscopy observations as well as electric and electro-optical measurements.
Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

PubMed

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-12-03

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.
Band-offsets at BaTiO3/Cu2O heterojunction and enhanced photoelectrochemical response: theory and experiment(Conference Presentation)

NASA Astrophysics Data System (ADS)

Sharma, Dipika; Satsangi, Vibha R.; Dass Kaura, Sahab; Shrivastav, Rohit; Waghmare, Umesh V.

2016-10-01

Band-offsets at BaTiO3/Cu2O heterojunction and enhanced photoelectrochemical response: theory and experiment Dipika Sharmaa, Vibha R. Satsangib, Rohit Shrivastava, Umesh V. Waghmarec, Sahab Dassa aDepartment of Chemistry, Dayalbagh Educational Institute, Agra-282 110 (India) bDepartment of Physics and Computer Sciences, Dayalbagh Educational Institute, Agra-282 110 (India) cTheoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore-560 064 (India) * Phone: +91-9219695960. Fax: +91-562-2801226. E-mail: drsahabdas@gmail.com. Study on photoelectrochemical activity of pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction has been carried out using DFT based band offsets and charge carriers effective mass calculations and their experimental verification. The results of DFT calculations show that BaTiO3 and Cu2O have staggered type band alignment after the heterojunction formation and high mobility of electrons in Cu2O as compared to the electrons in BaTiO3. Staggered type band edges alignment and high mobility of electrons and holes improved the separation of photo-generated charge carriers in BaTiO3/Cu2O heterojunction. To validate the theoretical results experiments were carried out on pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction with varying thickness of Cu2O. All samples were characterized by X- Ray Diffractometer, SEM and UV-Vis spectrometry. Nanostructured thin films of pristine BaTiO3, Cu2O and BaTiO3/Cu2O heterojunction were used as photoelectrode in the photoelectrochemical cell for water splitting reaction. Maximum photocurrent density of 1.44 mA/cm2 at 0.90 V/SCE was exhibited by 442 nm thick BaTiO3/Cu2O heterojunction photoelectrode Increased photocurrent density and enhanced photoconversion efficiency, exhibited by the heterojunction may be attributed to improved conductivity and enhanced separation of the photogenerated carriers at the BaTiO3/Cu2O interface. The experimental results and first-principles calculations compare well, thus suggesting that such calculations have the potential to be used in screening various metal oxide heterojunction before performing the experiments thereby saving precious chemicals, time and energy. Keywords: Photoelectrochemical, Water splitting, heterojunction, Cu2O, BaTiO3 References: [1] Surbhi Choudhary, et al. Nanostructured bilayered thin films in photoelectrochemical water splitting - A review: International Journal of Hydrogen Energy, (2012). [2] Dipika Sharma, Anuradha Verma, V.R. Satsangi, Rohit shrivastav, Sahab Dass Nanostructured SrTiO3 thin films sensitized by Cu2O for Photoelectrochemical Hydrogen Generation. International journal of Hydrogen Energy;42:,4230-4241, 2014.
Measurement of carrier transport and recombination parameter in heavily doped silicon

NASA Technical Reports Server (NTRS)

Swanson, Richard M.

1986-01-01

The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.
Effect of doping (C or N) and co-doping (C+N) on the photoactive properties of magnetron sputtered titania coatings for the application of solar water-splitting.

PubMed

Rahman, M; Dang, B H Q; McDonnell, K; MacElroy, J M D; Dowling, D P

2012-06-01

The photocatalytic splitting of water into hydrogen and oxygen using a photoelectrochemical (PEC) cell containing titanium dioxide (TiO2) photoanode is a potentially renewable source of chemical fuels. However, the size of the band gap (-3.2 eV) of the TiO2 photocatalyst leads to its relatively low photoactivity toward visible light in a PEC cell. The development of materials with smaller band gaps of approximately 2.4 eV is therefore necessary to operate PEC cells efficiently. This study investigates the effect of dopant (C or N) and co-dopant (C+N) on the physical, structural and photoactivity of TiO2 nano thick coating. TiO2 nano-thick coatings were deposited using a closed field DC reactive magnetron sputtering technique, from titanium target in argon plasma with trace addition of oxygen. In order to study the influence of doping such as C, N and C+N inclusions in the TiO2 coatings, trace levels of CO2 or N2 or CO2+N2 gas were introduced into the deposition chamber respectively. The properties of the deposited nano-coatings were determined using Spectroscopic Ellipsometry, SEM, AFM, Optical profilometry, XPS, Raman, X-ray diffraction UV-Vis spectroscopy and tri-electrode potentiostat measurements. Coating growth rate, structure, surface morphology and roughness were found to be significantly influenced by the types and amount of doping. Substitutional type of doping in all doped sample were confirmed by XPS. UV-vis measurement confirmed that doping (especially for C doped sample) facilitate photoactivity of sputtered deposited titania coating toward visible light by reducing bandgap. The photocurrent density (indirect indication of water splitting performance) of the C-doped photoanode was approximately 26% higher in comparison with un-doped photoanode. However, coating doped with nitrogen (N or N+C) does not exhibit good performance in the photoelectrochemical cell due to their higher charge recombination properties.
Fabrication and characterization of Ga-doped ZnO / Si heterojunction nanodiodes

NASA Astrophysics Data System (ADS)

Akgul, Guvenc; Akgul, Funda Aksoy

2017-02-01

In this study, temperature-dependent electrical properties of n-type Ga-doped ZnO thin film / p-type Si nanowire heterojunction diodes were reported. Metal-assisted chemical etching (MACE) process was performed to fabricate Si nanowires. Ga-doped ZnO films were then deposited onto nanowires through chemical bath deposition (CBD) technique to build three-dimensional nanowire-based heterojunction diodes. Fabricated devices revealed significant diode characteristics in the temperature range of 220 - 360 K. Electrical measurements shown that diodes had a well-defined rectifying behavior with a good rectification ratio of 103 ±3 V at room temperature. Ideality factor (n) were changed from 2.2 to 1.2 with increasing temperature.
Photoelectrochemical Bioanalysis Platform for Cells Monitoring Based on Dual Signal Amplification Using in Situ Generation of Electron Acceptor Coupled with Heterojunction.

PubMed

Li, Ruyan; Zhang, Yue; Tu, Wenwen; Dai, Zhihui

2017-07-12

By using in situ generation of electron acceptor coupled with heterojunction as dual signal amplification, a simple photoelectrochemical (PEC) bioanalysis platform was designed. The synergic effect between the photoelectrochemical (PEC) activities of carbon nitride (C 3 N 4 ) nanosheets and PbS quantum dots (QDs) achieved almost nine-fold photocurrent intensity increment compared with the C 3 N 4 alone. After the G-quadruplex/hemin/Pt nanoparticles (NPs) with catalase-like activity toward H 2 O 2 were introduced, oxygen was in situ generated and acted as electron donor by improving charge separation efficiency and further enhancing photocurrent response. The dually amplified signal made enough sensitivity for monitoring H 2 O 2 released from live cells. The photocathode was prepared by the stepwise assembly of C 3 N 4 nanosheets and PbS QDs on indium tin oxide (ITO) electrode, which was characterized by scanning electron microscope. A signal-on protocol was achieved for H 2 O 2 detection in vitro due to the relevance of photocurrent on the concentration of H 2 O 2 . Under the optimized condition, the fabricated PEC bioanalysis platform exhibited a linear range of 10-7000 μM with a detection limit of 1.05 μM at S/N of 3. Besides, the bioanalysis platform displayed good selectivity against other reductive biological species. By using HepG2 cells as a model, a dual signal amplifying PEC bioanalysis platform for monitoring cells was developed. The bioanalysis platform was successfully applied to the detection of H 2 O 2 release from live cells, which provided a novel method for cells monitoring and would have prospect in clinical assay.
First-Principles Study of the Band Diagrams and Schottky-Type Barrier Heights of Aqueous Ta3N5 Interfaces.

PubMed

Watanabe, Eriko; Ushiyama, Hiroshi; Yamashita, Koichi

2017-03-22

The photo(electro)chemical production of hydrogen by water splitting is an efficient and sustainable method for the utilization of solar energy. To improve photo(electro)catalytic activity, a Schottky-type barrier is typically useful to separate excited charge carriers in semiconductor electrodes. Here, we focused on studying the band diagrams and the Schottky-type barrier heights of Ta 3 N 5 , which is one of the most promising materials as a photoanode for water splitting. The band alignments of the undoped and n-type Ta 3 N 5 with adsorbents in a vacuum were examined to determine how impurities and adsorbents affect the band positions and Fermi energies. The band edge positions as well as the density of surface states clearly depended on the density of O N impurities in the bulk and surface regions. Finally, the band diagrams of the n-type Ta 3 N 5 /water interfaces were calculated with an improved interfacial model to include the effect of electrode potential with explicit water molecules. We observed partial Fermi level pinning in our calculations at the Ta 3 N 5 /water interface, which affects the driving force for charge separation.
Crystal growth and electrical properties of CuFeO 2 single crystals

NASA Astrophysics Data System (ADS)

Dordor, P.; Chaminade, J. P.; Wichainchai, A.; Marquestaut, E.; Doumerc, J. P.; Pouchard, M.; Hagenmuller, P.; Ammar, A.

1988-07-01

Delafossite-type CuFeO 2 single crystals have been prepared by a flux method: crystals obtained in a Cu crucible with LiBO 2 as flux are n-type whereas those prepared in a Pt crucible with a Cu 2O flux are p-type. Electrical measurements have revealed that n-type crystals exhibit weak anisotropic conductivities with large activation energies and small mobilities (r.t. values perpendicular and parallel to the c-axis: μ⊥ = 5 × 10 -5 and μ‖ = 10 -7 cm -2 V -1 sec -1). p-type crystals, less anisotropic, are characterized by low activation energies and higher mobilities ( μ⊥ = 34 and μ‖ = 8.9 cm 2 V -1 sec -1). A two -conduction-band model is proposed to account for the difference observed between the energy gap value deduced from photoelectrochemical measurements and the activation energy of the electrical conductivity in the intrinsic domain.
Demonstration of efficient spin injection and detection in various systems using Fe{sub 3}O{sub 4} based spin injectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhat, Shwetha G., E-mail: shwethabhat@physics.iisc.ernet.in; Anil Kumar, P. S.

2016-05-15

Half-metal based spin injector devices for spin injection and detection application have proven to be efficient owing to their enhanced injection and detection efficiency. In this study, we extend the all-electrical spin injection and detection studies into different systems like Si and GaAs using half-metal Fe{sub 3}O{sub 4} as a spin injector in the presence and absence of tunnel barrier MgO. Injection into GaAs is verified using conventional Fe/MgO/GaAs devices. Room temperature spin injection into both p-type and n-type Si is achieved and the spin injection could be observed down to 100 K. Obtained spin relaxation time for these n-typemore » and p-type Si at different temperatures agree well with the existing reports. Further, the temperature dependent spin injection and detection is also successfully achieved in Fe{sub 3}O{sub 4}/GaAs (n-type) Schottky devices, and a comparison study of the results with control experiment using Fe/MgO/GaAs (n-type) devices confirm the relaxation to be similar in the GaAs substrate, as expected. Hence, even Fe{sub 3}O{sub 4} material can be effectively used as an efficient spin injector as well as detector, making it an attractive candidate for the room temperature spintronics device applications.« less
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

NASA Astrophysics Data System (ADS)

Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

2018-02-01

AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.
Improvement in crystal quality and optical properties of n-type GaN employing nano-scale SiO2 patterned n-type GaN substrate.

PubMed

Jo, Min Sung; Sadasivam, Karthikeyan Giri; Tawfik, Wael Z; Yang, Seung Bea; Lee, Jung Ju; Ha, Jun Seok; Moon, Young Boo; Ryu, Sang Wan; Lee, June Key

2013-01-01

n-type GaN epitaxial layers were regrown on the patterned n-type GaN substrate (PNS) with different size of silicon dioxide (SiO2) nano dots to improve the crystal quality and optical properties. PNS with SiO2 nano dots promotes epitaxial lateral overgrowth (ELOG) for defect reduction and also acts as a light scattering point. Transmission electron microscopy (TEM) analysis suggested that PNS with SiO2 nano dots have superior crystalline properties. Hall measurements indicated that incrementing values in electron mobility were clear indication of reduction in threading dislocation and it was confirmed by TEM analysis. Photoluminescence (PL) intensity was enhanced by 2.0 times and 3.1 times for 1-step and 2-step PNS, respectively.
Enabling unassisted solar water splitting by iron oxide and silicon

DOE PAGES

Jang, Ji-Wook; Du, Chun; Ye, Yifan; ...

2015-06-16

A solution for large-scale solar energy storage is photoelectrochemical (PEC) water splitting. However, its development has been impeded by the poor performance of photoanodes, particularly in their capability for photovoltage generation. Many examples employing photovoltaic modules to correct the deficiency for unassisted solar water splitting have been reported to-date. We show that, by using the prototypical photoanode material of haematite as a study tool, structural disorders on or near the surfaces are important causes of the low photovoltages. We develop a facile re-growth strategy to reduce surface disorders and as a consequence, a turn-on voltage of 0.45 V (versus reversiblemore » hydrogen electrode) is achieved. In conclusion, this result permits us to construct a photoelectrochemical device with a haematite photoanode and Si photocathode to split water at an overall efficiency of 0.91%, with NiFeOx and TiO2/Pt overlayers, respectively.« less
Hydrogen production by photoelectrolytic decomposition of H2O using solar energy

NASA Technical Reports Server (NTRS)

Rauh, R. D.; Alkaitis, S. A.; Buzby, J. M.; Schiff, R.

1980-01-01

Photoelectrochemical systems for the efficient decomposition of water are discussed. Semiconducting d band oxides which would yield the combination of stability, low electron affinity, and moderate band gap essential for an efficient photoanode are sought. The materials PdO and Fe-xRhxO3 appear most likely. Oxygen evolution yields may also be improved by mediation of high energy oxidizing agents, such as CO3(-). Examination of several p type semiconductors as photocathodes revealed remarkable stability for p-GaAs, and also indicated p-CdTe as a stable H2 photoelectrode. Several potentially economical schemes for photoelectrochemical decomposition of water were examined, including photoelectrochemical diodes and two stage, four photon processes.
Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration

NASA Astrophysics Data System (ADS)

Qamar, Afzaal; Dao, Dzung Viet; Dinh, Toan; Iacopi, Alan; Walker, Glenn; Phan, Hoang-Phuong; Hold, Leonie; Dimitrijev, Sima

2017-04-01

This article reports the results on the piezo-Hall effect in single crystal n-type 3C-SiC(100) having a low carrier concentration. The effect of the crystallographic orientation on the piezo-Hall effect has been investigated by applying stress to the Hall devices fabricated in different crystallographic directions. Single crystal n-type 3C-SiC(100) and 3C-SiC(111) were grown by low pressure chemical vapor deposition at 1250 °C. Fundamental piezo-Hall coefficients were obtained using the piezo-Hall effect measurements as P11 = (-29 ± 1.3) × 10-11 Pa-1, P12 = (11.06 ± 0.5)× 10-11 Pa-1, and P44 = (-3.4 ± 0.7) × 10-11 Pa-1. It has been observed that the piezo-Hall coefficients of n-type 3C-SiC(100) show a completely different behavior as compared to that of p-type 3C-SiC.
Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si

NASA Astrophysics Data System (ADS)

Fujiwara, N.; Saito, K.; Nakabayashi, Y.; Osuman, H. I.; Toyonaga, K.; Matsumoto, S.; Sato, Y.

2002-01-01

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5×10 13 cm-3, 100 keV) through a chemical vapor deposition (CVD) Si 3N 4 film. For a half of samples, Si 3N 4 was etched off and SiO 2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 °C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si 3N 4 and Si/SiO 2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO 2 and Si 3N 4 films for the present annealing condition of 700 °C for 20-360 min. Regarding dose loss, a distinct different behavior was observed. In case of the SiO 2 cover film, amount of dose decreases with the annealing time. On the other hand, amount of dose decrease with annealing time up to 180 min, but is recovered for more than 180 min in case of the Si 3N 4 cover film. From TEM and EELS analyses, it is found that nitrogen segregates at the Si/Si 3N 4 interface, resulting in recovery of dose loss.

Enhancement of solar hydrogen evolution from water by surface modification with CdS and TiO2 on porous CuInS2 photocathodes prepared by an electrodeposition-sulfurization method.

PubMed

Zhao, Jiao; Minegishi, Tsutomu; Zhang, Li; Zhong, Miao; Gunawan; Nakabayashi, Mamiko; Ma, Guijun; Hisatomi, Takashi; Katayama, Masao; Ikeda, Shigeru; Shibata, Naoya; Yamada, Taro; Domen, Kazunari

2014-10-27

Porous films of p-type CuInS2, prepared by sulfurization of electrodeposited metals, are surface-modified with thin layers of CdS and TiO2. This specific porous electrode evolved H2 from photoelectrochemical water reduction under simulated sunlight. Modification with thin n-type CdS and TiO2 layers significantly increased the cathodic photocurrent and onset potential through the formation of a p-n junction on the surface. The modified photocathodes showed a relatively high efficiency and stable H2 production under the present reaction conditions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor.

PubMed

Ho, Hai Quan; Honda, Yuki; Motoyama, Mizuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

2018-05-01

The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a 'screw', an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40t/EFPY of 10Ωcm resistivity Si-particles for fabrication of the n-type spherical solar cell. Copyright © 2018 Elsevier Ltd. All rights reserved.
Al2O3/SiON stack layers for effective surface passivation and anti-reflection of high efficiency n-type c-Si solar cells

NASA Astrophysics Data System (ADS)

Thi Thanh Nguyen, Huong; Balaji, Nagarajan; Park, Cheolmin; Triet, Nguyen Minh; Le, Anh Huy Tuan; Lee, Seunghwan; Jeon, Minhan; Oh, Donhyun; Dao, Vinh Ai; Yi, Junsin

2017-02-01

Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (Q f) density of N-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films plays a poor role in boron emitter passivation. The more the refractive index ( n ) of a-SiNx:H is decreased, the more the positive Q f of a-SiNx:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiOx) and a-SiNx:H with variable n and less positive Q f compared with a-SiNx:H. In this study, we investigated the passivation and anti-reflection properties of Al2O3/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable n and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al2O3 layer, and the electrical and optical properties were analyzed. The SiON capping layer with n = 1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74 = 1010 cm-2 eV-1 and Q f of -2.59 = 1012 cm-2 with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al2O3/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al2O3/a-SiNx:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm-2 and 12 mV, respectively, compared to the Al2O3/a-SiNx:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.
Van der Waals heterojunction diode composed of WS2 flake placed on p-type Si substrate

NASA Astrophysics Data System (ADS)

Aftab, Sikandar; Farooq Khan, M.; Min, Kyung-Ah; Nazir, Ghazanfar; Afzal, Amir Muhammad; Dastgeer, Ghulam; Akhtar, Imtisal; Seo, Yongho; Hong, Suklyun; Eom, Jonghwa

2018-01-01

P-N junctions represent the fundamental building blocks of most semiconductors for optoelectronic functions. This work demonstrates a technique for forming a WS2/Si van der Waals junction based on mechanical exfoliation. Multilayered WS2 nanoflakes were exfoliated on the surface of bulk p-type Si substrates using a polydimethylsiloxane stamp. We found that the fabricated WS2/Si p-n junctions exhibited rectifying characteristics. We studied the effect of annealing processes on the performance of the WS2/Si van der Waals p-n junction and demonstrated that annealing improved its electrical characteristics. However, devices with vacuum annealing have an enhanced forward-bias current compared to those annealed in a gaseous environment. We also studied the top-gate-tunable rectification characteristics across the p-n junction interface in experiments as well as density functional theory calculations. Under various temperatures, Zener breakdown occurred at low reverse-bias voltages, and its breakdown voltage exhibited a negative coefficient of temperature. Another breakdown voltage was observed, which increased with temperature, suggesting a positive coefficient of temperature. Therefore, such a breakdown can be assigned to avalanche breakdown. This work demonstrates a promising application of two-dimensional materials placed directly on conventional bulk Si substrates.
Surface, Bulk, and Interface: Rational Design of Hematite Architecture toward Efficient Photo-Electrochemical Water Splitting.

PubMed

Li, Chengcheng; Luo, Zhibin; Wang, Tuo; Gong, Jinlong

2018-05-11

Collecting and storing solar energy to hydrogen fuel through a photo-electrochemical (PEC) cell provides a clean and renewable pathway for future energy demands. Having earth-abundance, low biotoxicity, robustness, and an ideal n-type band position, hematite (α-Fe 2 O 3 ), the most common natural form of iron oxide, has occupied the research hotspot for decades. Here, a close look into recent progress of hematite photoanodes for PEC water splitting is provided. Effective approaches are introduced, such as cocatalysts loading and surface passivation layer deposition, to improve the hematite surface reaction in thermodynamics and kinetics. Second, typical methods for enhancing light absorption and accelerating charge transport in hematite bulk are reviewed, concentrating upon doping and nanostructuring. Third, the back contact between hematite and substrate, which affects interface states and electron transfer, is deliberated. In addition, perspectives on the key challenges and future prospects for the development of hematite photoelectrodes for PEC water splitting are given. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Opto-electronic properties of P-doped nc-Si-QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

NASA Astrophysics Data System (ADS)

Kar, Debjit; Das, Debajyoti

2016-07-01

With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si-QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si-C bonds in the amorphous matrix and the embedded high density tiny nc-Si-QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si-QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si-QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si-QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si-QD/a-SiC:H films grown at ˜300 °C, demonstrating wide optical gap ˜1.86-1.96 eV and corresponding high electrical conductivity ˜4.5 × 10-1-1.4 × 10-2 S cm-1, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.
Luminescent Photoelectrochemical Cells. 4. Electroluminescent Properties of Undoped and Tellurium-Doped Cadmium Sulfide Electrodes.

DTIC Science & Technology

1980-12-03

and/or Dist Special UnclassifiLed 26CURITY CLAIICATION OrY,.g PAWEWO 000 Ss~w" Introduction Anunderstanding of electrochemistry at semiconductor...studies: Electrolyte species capable of hole injection into the valence bands of n-type, semiconducting T102 SrTi’ 3 , CdS ,GaP ’ ZnO ,and GaAs...the denominator of (4) by using the total current as a measure of holes injected. If equations (1) and (2) truly describe the electrochemistry at the
Near-uv photon efficiency in a TiO2 electrode - Application to hydrogen production from solar energy

NASA Technical Reports Server (NTRS)

Desplat, J.-L.

1976-01-01

An n-type (001) TiO2 electrode irradiated at 365 nm was tested under anodic polarization. A saturation current independent of pH and proportional to light intensity has been observed. Accurate measurements of the incident power lead to a 60 per cent photon efficiency. A photoelectrochemical cell built with such an electrode, operated under solar irradiation without concentration, produced an electrolysis current of 0.7 mA/sq cm without applied voltage.
Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

PubMed Central

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-01-01

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759
Application of Chlorophyll as Sensitizer for ZnS Photoanode in a Dye-Sensitized Solar Cell (DSSC)

NASA Astrophysics Data System (ADS)

Panda, B. B.; Mahapatra, P. K.; Ghosh, M. K.

2018-03-01

Zinc sulphide thin films have been synthesized by the electrodeposition method onto stainless steel substrate followed by dipping in acetone solution of chlorophyll in different time intervals to form photosensitised thin films. The photoelectrochemical parameters of the films have been studied using the photoelectrochemical cell having the cell configuration as follows {{photoelectrode/NaOH}}({1{{M}}} ) + {{S}}({1{{M}}} ) + {{N}}{{{a}}_2}{{S}}({1{{M}}} ){{/C}} ({{{graphite}}} ) . The photoelectrochemical characterization of the semiconductor film and dye-sensitised films has been carried out by measuring current-voltage (I-V) in the dark, power output and photoresponse. The study proves that the conductivity of both ZnS film and dye-sensitised ZnS films are n-type. The power output curves illustrate that open circuit voltage (V oc) and short circuit current (I sc) increase from 0.210 V to 0.312 V and from 0.297 mA to 0.533 mA, respectively. The fill factor initially decreases from 0.299 to 0.213 and then increases to 0.297 irregularly whereas efficiency increases from 0.047% to 0.123%. The UV-Vis absorbance spectrum of chlorophyll in acetone shows the presence of chlorophyll. The structural morphology of the ZnS thin films has also been analysed by using x-ray diffraction technique (XRD) and a scanning electron microscope (SEM). The XRD pattern shows the formation of nanocrystalline ZnS thin films of size 65 nm and the SEM images confirm the formation of fibrous film of ZnS. The energy diffraction analysis of x-ray confirms the formation of ZnS thin films.
Advancing semiconductor-electrocatalyst systems: application of surface transformation films and nanosphere lithography.

PubMed

Brinkert, Katharina; Richter, Matthias H; Akay, Ömer; Giersig, Michael; Fountaine, Katherine T; Lewerenz, Hans-Joachim

2018-05-24

Photoelectrochemical (PEC) cells offer the possibility of carbon-neutral solar fuel production through artificial photosynthesis. The pursued design involves technologically advanced III-V semiconductor absorbers coupled via an interfacial film to an electrocatalyst layer. These systems have been prepared by in situ surface transformations in electrochemical environments. High activity nanostructured electrocatalysts are required for an efficiently operating cell, optimized in their optical and electrical properties. We demonstrate that shadow nanosphere lithography (SNL) is an auspicious tool to systematically create three-dimensional electrocatalyst nanostructures on the semiconductor photoelectrode through controlling their morphology and optical properties. First results are demonstrated by means of the photoelectrochemical production of hydrogen on p-type InP photocathodes where hitherto applied photoelectrodeposition and SNL-deposited Rh electrocatalysts are compared based on their J-V and spectroscopic behavior. We show that smaller polystyrene particle masks achieve higher defect nanostructures of rhodium on the photoelectrode which leads to a higher catalytic activity and larger short circuit currents. Structural analyses including HRSEM and the analysis of the photoelectrode surface composition by using photoelectron spectroscopy support and complement the photoelectrochemical observations. The optical performance is further compared to theoretical models of the nanostructured photoelectrodes on light scattering and propagation.
Novel catalysts and photoelectrochemical system for solar fuel production

NASA Astrophysics Data System (ADS)

Zhang, Yan

Solar fuel production from abundant raw chemicals such as CO2 and water is highly desired as a clean renewable energy solution for the future. Developing photoelectrochemical cells is viewed as a promising approach to realize this energy conversion and storage process. Efficient and robust oxygen evolution catalyst made from non-precious materials remains a major challenge for such a system. This thesis basically consists of three parts of work, including studies on enhancing the photocatalytic oxygen evolution activity of cobalt-based spinel nanoparticles by manganese3+ substitution, in situ formation of cobalt oxide nanocubanes as highly active catalyst for photocatalytic oxygen evolution reaction, and development of a photoanode-driven photoelectrochemical cell for CO2 reduction with water. The first part of this thesis work devotes efforts in the development and study on cobalt and other transition metal oxide based oxygen evolution catalyst. Photocatalytic oxygen evolution is a critical step for solar fuel production from abundant sources. It poses a significant challenge because it requires an efficient catalyst to bridge the one-electron photon capture process with the four-electron oxygen reaction. Among all the metal oxides, Co3O4 spinel exhibits a high activity as an oxygen evolution catalyst. The results of this work demonstrate that the photocatalytic oxygen evolution activity of Co3O4 spinel can be further enhanced by substituting Co with Mn in the spinel structure. Using a facile hydrothermal approach, Co3O4 spinel nanoparticles as well as Mn-substituted and Ni-substituted Co3O4 spinel nanoparticles with a typical particle size of 5-7 nm were successfully synthesized. The morphology and crystal structures of the as-synthesized nanoparticle catalysts have been carefully examined using various structural characterization techniques, including powder x-ray diffraction (PXRD), transmission electron microscope (TEM), gas adsorption, and x-ray absorption spectroscopy (XAS). The photocatalytic activities of as-made nanoparticles were investigated using a well-studied visible light driven [Ru(bpy)3]2+-persulfate system. In both Clark electrode and reactor/gas chromatography (GC) systems, Mn-substituted Co3O 4 nanoparticles exhibited the highest turnover frequency (TOF) among all the three kinds of catalysts. The data presented in this paper suggest that the photocatalytic oxygen evolution activity of Co3O 4 spinel catalyst can be further enhanced by Mn3+ substitution at the octahedral sites. The second part of this piece of work was carried out to further investigate cobalt oxide based photocatalytic oxygen evolution catalyst. A new strategy was developed to synthesize nonsupported cobalt oxide nanocubanes through an in situ phase transformation mechanism using a layered Co(OH)(OCH3) precursor. Under sonication, the precursor was exfoliated and transformed into cobalt oxide nanocubanes in the presence of NaHCO 3-Na2SiF6 buffer solution. The resulting cobalt catalyst with an average particle size less than 2 nm exhibited a turnover frequency of 0.0023 per second per cobalt in photocatalytic oxygen evolution reaction. X-ray absorption results suggested that a unique nanocubane structure, where 13 cobalt atoms fully coordinated with oxygen atoms and hydroxide groups in an octahedral arrangement to form 8 Co4O4 cubanes, may be responsible for the exceptionally high oxygen evolution catalysis activity. This thesis work is completed with the development of a photoanode-driven photoelectrochemical cell for CO2 reduction. A NiOx decorated Si photoanode and nanoporous Ag cathode were employed. With an external bias of 2.0 V, a current density at cathode of 10 mA/cm2 and Faradaic efficiency of 70% for CO2 to CO was achieved. Compared to a normal electrochemical cell, the photoelectrochemical cell saves 0.4 V electrical energy by absorbing photo-energy. In addition, post-test photoanodes were carefully characterized by SEM, XAS, and XPS analysis.
Fabrication and characterization of low temperature polycrystalline silicon thin film transistors

NASA Astrophysics Data System (ADS)

Krishnan, Anand Thiruvengadathan

2000-10-01

The proliferation of devices with built-in displays, such as personal digital assistants and cellular phones has created a demand for rugged light-weight displays. Polymeric substrates could be suited for these applications, and they offer the possibility of flexible displays also. However, driver circuitry needs to be integrated in the display if the cost is to be reduced. Low temperature (<350°C) polycrystalline silicon (poly-Si) thin film transistors, if developed, offer driver circuitry integration during pixel transistor fabrication on top of flexible substrates. This thesis addresses several issues related to the fabrication of thin film transistors at low temperatures on glass substrates. A high-density plasma (electron cyclotron resonance (ECR)) based approach was adopted for deposition of thin films. A process for deposition of n-type doped silicon (n-type doped Si) at T < 350°C and having resistivity <1 ohm/cm has been developed. Intrinsic poly-Si was deposited under different conditions of microwave power, RF bias and deposition times. The properties of n-type doped Si and intrinsic poly-Si were correlated with the structure and the deposition conditions. A novel TFT structure has been proposed and implemented in this work. This top gate TFT structure uses n-type doped Si and utilizes only two masks and one alignment step. There are no critical etch steps and good interface quality could be obtained even without post-processing hydrogenation as the poly-Si surface was not exposed to air before deposition of the gate dielectric. TFTs using this top gate structure were fabricated with no process step exceeding 340°C electrode temperature (surface temperature <300°C). These TFTs show ON/OFF ratios in excess of 105. Their sub-threshold swing is ˜0.5 V/decade and mobility is 1--10 cm2/V-s. Several TFTs were also fabricated using alternative dielectrics such as oxide deposited from tetramethyl silane in an RFPECVD chamber and silicon nitride deposited in the ECR and these TFTs also show reasonable device characteristics. TFTs processed using this high-density plasma based approach show great potential for use in applications such as driver circuitry integration on low temperature substrates.
Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

DOEpatents

Mandal, Krishna C.; Terry, J. Russell

2016-12-06

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.
Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells

NASA Astrophysics Data System (ADS)

Kendrick, Chito E.; Eichfeld, Sarah M.; Ke, Yue; Weng, Xiaojun; Wang, Xin; Mayer, Theresa S.; Redwing, Joan M.

2010-08-01

Radial p-n silicon nanowire (SiNW) solar cells are of interest as a potential pathway to increase the efficiency of crystalline silicon photovoltaics by reducing the junction length and surface reflectivity. Our studies have focused on the use of vapor-liquid-solid (VLS) growth in combination with chemical vapor deposition (CVD) processing for the fabrication of radial p-n junction SiNW array solar cells. High aspect ratio p-type SiNW arrays were initially grown on gold-coated (111) Si substrates by CVD using SiCl4 as the source gas and B2H6 as the p-type dopant source. The epitaxial re-growth of n-type Si shell layers on the Si nanowires was then investigated using SiH4 as the source gas and PH3 as the dopant. Highly conformal coatings were achieved on nanowires up to 25 μm in length. The microstructure of the Si shell layer changed from polycrystalline to single crystal as the deposition temperature was raised from 650oC to 950oC. Electrical test structures were fabricated by aligning released SiNWs onto pre-patterned substrates via fieldassisted assembly followed by selective removal of the n-type shell layer and contact deposition. Current-voltage measurements of the radial p-n SiNWs diodes fabricated with re-grown Si shell layers at 950°C demonstrate rectifying behavior with an ideality factor of 1.93. Under illumination from an AM1.5g spectrum and efficiency for this single SiNW radial p-n junction was determined to be 1.8%, total wire diameter was 985 nm.
Photoelectrochemical response of GaN, InGaN, and GaNP nanowire ensembles

NASA Astrophysics Data System (ADS)

Philipps, Jan M.; Hölzel, Sara; Hille, Pascal; Schörmann, Jörg; Chatterjee, Sangam; Buyanova, Irina A.; Eickhoff, Martin; Hofmann, Detlev M.

2018-05-01

The photoelectrochemical responses of GaN, GaNP, and InGaN nanowire ensembles are investigated by the electrical bias dependent photoluminescence, photocurrent, and spin trapping experiments. The results are explained in the frame of the surface band bending model. The model is sufficient for InGaN nanowires, but for GaN nanowires the electrochemical etching processes in the anodic regime have to be considered additionally. These processes lead to oxygen rich surface (GaxOy) conditions as evident from energy dispersive X-ray fluorescence. For the GaNP nanowires, a bias dependence of the carrier transfer to the electrolyte is not reflected in the photoluminescence response, which is tentatively ascribed to a different origin of radiative recombination in this material as compared to (In)GaN. The corresponding consequences for the applications of the materials for water splitting or pH-sensing will be discussed.
Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

NASA Astrophysics Data System (ADS)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.
Time-Resolved Photoluminescence Studies of Si-doped AlGaN alloys

NASA Astrophysics Data System (ADS)

Nam, K. B.; Li, J.; Nakarmi, M. L.; Lin, J. Y.; Jiang, H. X.

2002-03-01

Si-doped n-type Al x Ga_1-x N alloys with x between 0.3 and 0.5 were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. Time-resolved photoluminescence (PL) emission spectroscopy and variable temperature Hall-effect measurements were employed to study the optical and electrical properties of these epilayers. Our electrical data revealed that the conductivity of Si-doped Al x Ga_1-x N alloys (x > 0.4) increases with an increase of the Si doping concentration (N_Si) for a fixed x value and exhibits a sharp increase around N_Si= 1x10 ^18cm-3, suggesting the existence of a critical Si doping concentration needed to convert insulating Al x Ga_1-x N alloys (x > 0.4) to n-type conductivity. Time-resolved PL studies also showed that PL decay lifetime and activation energy decrease sharply when Si-doping concentration increases from N_Si= 0 to 1x10 ^18cm-3and then followed by gradual decreases as N_Si further increases. Our results thus suggest that Si-doping reduces the effect of carrier localization in Al x Ga_1-x N alloys and a sharp drop in carrier localization energy occurs at N_Si= 1x10 ^18cm-3, which is the critical Si-doping concentration needed to fill up the localized states in Al x Ga_1-x N alloys (x > 0.4). The implications of these results to UV optoelectronic devices are also discussed.
Visible light photoelectrochemical sensor for ultrasensitive determination of dopamine based on synergistic effect of graphene quantum dots and TiO2 nanoparticles.

PubMed

Yan, Yuting; Liu, Qian; Du, Xiaojiao; Qian, Jing; Mao, Hanping; Wang, Kun

2015-01-01

We have demonstrated a facile approach for fabricating graphene quantum dots-TiO2 (GQDs-TiO2) nanocomposites by a simple physical adsorption method. Compared with pure GQDs and TiO2 nanoparticles (NPs), the as-prepared GQDs-TiO2 nanocomposites showed enhanced photoelectrochemical (PEC) signal under visible-light irradiation. The photocurrent of GQDs-TiO2/GCE was nearly 30-fold and 12-fold enhancement than that of GQDs/GCE and TiO2/GCE, respectively, which was attributed to the synergistic amplification between TiO2 NPs and GQDs. More interestingly, the photocurrent of GQDs-TiO2 nanocomposites was selectively sensitized by dopamine (DA), and enhanced with the increasing of DA concentration. Further, a new PEC methodology for ultrasensitive determination of DA was developed, which showed linearly enhanced photocurrent by increasing the DA concentration from 0.02 to 105 μM with a detection limit of 6.7 nM (S/N=3) under optimized conditions. This strategy opens up a new avenue for the application of GQDs-based nanocomposites in the field of PEC sensing and monitoring. Copyright © 2014 Elsevier B.V. All rights reserved.
Electron mobility enhancement in epitaxial multilayer Si-Si/1-x/Ge/x/ alloy films on /100/Si

NASA Technical Reports Server (NTRS)

Manasevit, H. M.; Gergis, I. S.; Jones, A. B.

1982-01-01

Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from 20 to 40% higher than that of epitaxial Si layers and about 100% higher than that of epitaxial SiGe layers on Si were measured for the doping range 8 x 10 to the 15th to 10 to the 17th/cu cm. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thickness, and growth temperature.

Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires.

PubMed

Levtchenko, Alexandra; Le Gall, Sylvain; Lachaume, Raphaël; Michallon, Jérôme; Collin, Stéphane; Alvarez, José; Djebbour, Zakaria; Kleider, Jean-Paul

2018-06-22

By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi ) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong electrostatic screening effect. Depositing such a buffer layer playing the role of an electrostatic screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.
Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires

NASA Astrophysics Data System (ADS)

Levtchenko, Alexandra; Le Gall, Sylvain; Lachaume, Raphaël; Michallon, Jérôme; Collin, Stéphane; Alvarez, José; Djebbour, Zakaria; Kleider, Jean-Paul

2018-06-01

By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell’s performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell’s performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong electrostatic screening effect. Depositing such a buffer layer playing the role of an electrostatic screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.
Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices

NASA Astrophysics Data System (ADS)

Li, Jinchai; Yang, Weihuang; Li, Shuping; Chen, Hangyang; Liu, Dayi; Kang, Junyong

2009-10-01

The internal electric field is modified by using Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices (SLs). The first-principles simulation results show that the internal electric field in SL has been significantly intensified due to the charge transferring from Si-doped interface to Mg-doped interface. Accordingly, the Mg- and Si-δ-codoped p-type Al0.2Ga0.8N/GaN SLs are grown by metalorganic vapor phase epitaxy and higher hole concentration as much as twice of that in modulation-doped SL has been achieved, as determined by Hall effect measurements. Furthermore, by applying Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN SLs with high Al content as the p-type layers, we have fabricated deep ultraviolet light emitting diodes with superior current-voltage characteristics by lowering Mg-acceptor activation energy.
Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saini, Viney; Li, Zhongrui; Bourdo, Shawn

2011-01-13

A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B 2O 3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection andmore » transportation, while the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.« less
Structural and electrical investigations of a-Si:H(i) and a-Si:H(n+) stacked layers for improving the interface and passivation qualities

NASA Astrophysics Data System (ADS)

Hsieh, Yu-Lin; Lee, Chien-Chieh; Lu, Chia-Cheng; Fuh, Yiin-Kuen; Chang, Jenq-Yang; Lee, Ju-Yi; Li, Tomi T.

2017-07-01

A symmetrically stacked structure [(a-Si:H(n+)/a-Si:H(i)/CZ wafer (n)/a-Si:H(i)/a-Si:H(n+)] was used to optimize the growth process conditions of the n-type hydrogenated amorphous silicon [a-Si:H(n+)] thin films. Here a-Si:H(n+) film was used as back surface field (BSF) layer for the silicon heterojunction solar cell and all stacked films were prepared by conventional radio-frequency plasma-enhanced chemical vapor deposition. The characterizations of the effective carrier lifetime (τeff), electrical and structural properties, as well as correlation with the hydrogen dilution ratio (R=H2/SiH4) were systematically discussed with the emphasis on the effectiveness of the passivation layer using the lifetime tester, spectroscopic ellipsometry, and hall measurement. High quality of a stacked BSF layer (intrinsic/n-type a-Si:H layer) with effective carrier lifetime of 1.8 ms can be consistently obtained. This improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.
Singlet oxygen-based electrosensing by molecular photosensitizers

NASA Astrophysics Data System (ADS)

Trashin, Stanislav; Rahemi, Vanoushe; Ramji, Karpagavalli; Neven, Liselotte; Gorun, Sergiu M.; de Wael, Karolien

2017-07-01

Enzyme-based electrochemical biosensors are an inspiration for the development of (bio)analytical techniques. However, the instability and reproducibility of the reactivity of enzymes, combined with the need for chemical reagents for sensing remain challenges for the construction of useful devices. Here we present a sensing strategy inspired by the advantages of enzymes and photoelectrochemical sensing, namely the integration of aerobic photocatalysis and electrochemical analysis. The photosensitizer, a bioinspired perfluorinated Zn phthalocyanine, generates singlet-oxygen from air under visible light illumination and oxidizes analytes, yielding electrochemically-detectable products while resisting the oxidizing species it produces. Compared with enzymatic detection methods, the proposed strategy uses air instead of internally added reactive reagents, features intrinsic baseline correction via on/off light switching and shows C-F bonds-type enhanced stability. It also affords selectivity imparted by the catalytic process and nano-level detection, such as 20 nM amoxicillin in μl sample volumes.
Singlet oxygen-based electrosensing by molecular photosensitizers

PubMed Central

Trashin, Stanislav; Rahemi, Vanoushe; Ramji, Karpagavalli; Neven, Liselotte; Gorun, Sergiu M.; De Wael, Karolien

2017-01-01

Enzyme-based electrochemical biosensors are an inspiration for the development of (bio)analytical techniques. However, the instability and reproducibility of the reactivity of enzymes, combined with the need for chemical reagents for sensing remain challenges for the construction of useful devices. Here we present a sensing strategy inspired by the advantages of enzymes and photoelectrochemical sensing, namely the integration of aerobic photocatalysis and electrochemical analysis. The photosensitizer, a bioinspired perfluorinated Zn phthalocyanine, generates singlet-oxygen from air under visible light illumination and oxidizes analytes, yielding electrochemically-detectable products while resisting the oxidizing species it produces. Compared with enzymatic detection methods, the proposed strategy uses air instead of internally added reactive reagents, features intrinsic baseline correction via on/off light switching and shows C-F bonds-type enhanced stability. It also affords selectivity imparted by the catalytic process and nano-level detection, such as 20 nM amoxicillin in μl sample volumes.
Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) ormore » silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.« less
Improved Stability and Performance of Visible Photoelectrochemical Water Splitting on Solution-Processed Organic Semiconductor Thin Films by Ultrathin Metal Oxide Passivation

DOE PAGES

Wang, Lei; Yan, Danhua; Shaffer, David W.; ...

2017-12-27

Solution-processable organic semiconductors have potentials as visible photoelectrochemical (PEC) water splitting photoelectrodes due to their tunable small band gap and electronic energy levels, but they are typically limited by poor stability and photocatalytic activity. In this study, we demonstrate the direct visible PEC water oxidation on solution-processed organic semiconductor thin films with improved stability and performance by ultrathin metal oxide passivation layers. N-type fullerene-derivative thin films passivated by sub-2 nm ZnO via atomic layer deposition enabled the visible PEC water oxidation at wavelengths longer than 600 nm in harsh alkaline electrolyte environments with up to 30 μA/cm 2 photocurrents atmore » the thermodynamic water-oxidation equilibrium potential and the photoanode half-lifetime extended to ~1000 s. The systematic investigation reveals the enhanced water oxidation catalytic activity afforded by ZnO passivation and the charge tunneling governing the hole transfer through passivation layers. Further enhanced PEC performances were realized by improving the bottom ohmic contact to the organic semiconductor, achieving ~60 μA/cm 2 water oxidation photocurrent at the equilibrium potential, the highest values reported for organic semiconductor thin films to our knowledge. The improved stability and performance of passivated organic photoelectrodes and discovered design rationales provide useful guidelines for realizing the stable visible solar PEC water splitting based on organic semiconductor thin films.« less
Improved Stability and Performance of Visible Photoelectrochemical Water Splitting on Solution-Processed Organic Semiconductor Thin Films by Ultrathin Metal Oxide Passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lei; Yan, Danhua; Shaffer, David W.

Solution-processable organic semiconductors have potentials as visible photoelectrochemical (PEC) water splitting photoelectrodes due to their tunable small band gap and electronic energy levels, but they are typically limited by poor stability and photocatalytic activity. In this study, we demonstrate the direct visible PEC water oxidation on solution-processed organic semiconductor thin films with improved stability and performance by ultrathin metal oxide passivation layers. N-type fullerene-derivative thin films passivated by sub-2 nm ZnO via atomic layer deposition enabled the visible PEC water oxidation at wavelengths longer than 600 nm in harsh alkaline electrolyte environments with up to 30 μA/cm 2 photocurrents atmore » the thermodynamic water-oxidation equilibrium potential and the photoanode half-lifetime extended to ~1000 s. The systematic investigation reveals the enhanced water oxidation catalytic activity afforded by ZnO passivation and the charge tunneling governing the hole transfer through passivation layers. Further enhanced PEC performances were realized by improving the bottom ohmic contact to the organic semiconductor, achieving ~60 μA/cm 2 water oxidation photocurrent at the equilibrium potential, the highest values reported for organic semiconductor thin films to our knowledge. The improved stability and performance of passivated organic photoelectrodes and discovered design rationales provide useful guidelines for realizing the stable visible solar PEC water splitting based on organic semiconductor thin films.« less
Interaction of sodium atoms with stacking faults in silicon with different Fermi levels

NASA Astrophysics Data System (ADS)

Ohno, Yutaka; Morito, Haruhiko; Kutsukake, Kentaro; Yonenaga, Ichiro; Yokoi, Tatsuya; Nakamura, Atsutomo; Matsunaga, Katsuyuki

2018-06-01

Variation in the formation energy of stacking faults (SFs) with the contamination of Na atoms was examined in Si crystals with different Fermi levels. Na atoms agglomerated at SFs under an electronic interaction, reducing the SF formation energy. The energy decreased with the decrease of the Fermi level: it was reduced by more than 10 mJ/m2 in p-type Si, whereas it was barely reduced in n-type Si. Owing to the energy reduction, Na atoms agglomerating at SFs in p-type Si are stable compared with those in n-type Si, and this hypothesis was supported by ab initio calculations.
Dual ohmic contact to N- and P-type silicon carbide

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.
Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.
Graphene-doped Bi2S3 nanorods as visible-light photoelectrochemical aptasensing platform for sulfadimethoxine detection.

PubMed

Okoth, Otieno Kevin; Yan, Kai; Liu, Yong; Zhang, Jingdong

2016-12-15

Bismuth sulphide (Bi2S3) nanorods doped with graphene (G) were synthesized and explored as photoactive materials for constructing a photoelectrochemical (PEC) aptasensor for sulfadimethoxine (SDM) detection. The formation of Bi2S3 nanorods and G nanosheets was observed by scanning electron microscopy (SEM) and further characterized by X-ray diffraction (XRD) spectroscopy. The PEC measurements indicated that the photocurrent response of Bi2S3 was obviously improved by doping suitable amount of G. The G-Bi2S3 composite coated electrode was utilized for fabricating a PEC aptasensor by covalently immobilizing a 5'-amino-terminated SDM aptamer on the electrode surface. Based on the specific interaction between SDM and the aptamer, a PEC sensor responsive to SDM was obtained. Under optimal conditions, the proposed sensor showed a linear photocurrent response to SDM in the concentration range of 1.0-100nM, with a low detection limit (3S/N) of 0.55nM. Moreover, the sensor showed high sensitivity, stability and reproducibility. The potential applicability of the PEC aptasensor was confirmed by detecting SDM in veterinary drug formulation and milk. Copyright © 2016 Elsevier B.V. All rights reserved.
TiN-buffered substrates for photoelectrochemical measurements of oxynitride thin films

NASA Astrophysics Data System (ADS)

Pichler, Markus; Pergolesi, Daniele; Landsmann, Steve; Chawla, Vipin; Michler, Johann; Döbeli, Max; Wokaun, Alexander; Lippert, Thomas

2016-04-01

Developing novel materials for the conversion of solar to chemical energy is becoming an increasingly important endeavour. Perovskite compounds based on bandgap tunable oxynitrides represent an exciting class of novel photoactive materials. To date, literature mostly focuses on the characterization of oxynitride powder samples which have undeniable technological interest but do not allow the investigation of fundamental properties such as the role of the crystalline quality and/or the surface crystallographic orientation toward photo-catalytic activity. The challenge of growing high quality oxynitride thin films arises from the availability of a suitable substrate, owing to strict material and processing requirements: effective lattice matching, sufficiently high conductivities, stability under high temperatures and in strongly reducing environments. Here, we have established the foundations of a model system incorporating a TiN-buffer layer which enables fundamental investigations into crystallographic surface orientation and crystalline quality of the photocatalyst against photo(electro)chemical performance to be effectively performed. Furthermore, we find that TiN as current collector enables control over the nitrogen content of oxynitride thin films produced by a modified pulsed laser deposition method and allows the growth of highly ordered LaTiO3-xNx thin films.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Lin; Hu, Meng; Wang, Qianqian

Exploration of novel hard metastable phases of silicon nitride was performed using a recently developed particle-swarm optimization method within the CALYPSO software package. Three potential hard metastable phases of t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4} were predicted. These phases are mechanically and dynamically stable at ambient pressure based on their elastic constants and phonon dispersions. t-Si{sub 3}N{sub 4} and m-Si{sub 3}N{sub 4} exhibit lower energies than γ-Si{sub 3}N{sub 4} at pressures below 2.5 GPa and 2.9 GPa, respectively, which promise that the formers could be obtained by quenching from γ-Si{sub 3}N{sub 4}. o-Si{sub 3}N{sub 4} ismore » a better high-pressure metastable phase than CaTi{sub 2}O{sub 4}-type Si{sub 3}N{sub 4} proposed by Tatsumi et al. and it can come from the transition of γ-Si{sub 3}N{sub 4} under 198 GPa. The theoretical band gaps of t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4} at ambient pressure were 3.15 eV, 3.90 eV, and 3.36 eV, respectively. At ambient pressure, the Vickers hardness values of t-Si{sub 3}N{sub 4} (32.6 GPa), m-Si{sub 3}N{sub 4} (31.5 GPa), and o-Si{sub 3}N{sub 4} (36.1 GPa) are comparable to β-Si{sub 3}N{sub 4} and γ-Si{sub 3}N{sub 4}. With the pressure increasing, t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4} will change from the brittle to ductile state at about 15.7 GPa, 7.3 GPa and 28.9 GPa, respectively. - Graphical abstract: This figure shows the crystal structures of three Si{sub 3}N{sub 4} predicted in this manuscript, and left to right: t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4} and o-Si{sub 3}N{sub 4}. - Highlights: • We explored three metastable phases of Si{sub 3}N{sub 4} — t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4}. • The enthalpies of t and m- are much lower than that of γ at ambient pressure. • ois one further high pressure phase than γ. • o-Si{sub 3}N{sub 4} is the most hardest phase in Si{sub 3}N4 system. • Increasing pressure will change them from brittle to ductile state.« less
Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.
Theoretical study for heterojunction surface of NEA GaN photocathode dispensed with Cs activation

NASA Astrophysics Data System (ADS)

Xia, Sihao; Liu, Lei; Wang, Honggang; Wang, Meishan; Kong, Yike

2016-09-01

For the disadvantages of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, new-type NEA GaN photocathodes with heterojunction surface dispensed with Cs activation are investigated based on first-principle study with density functional theory. Through the growth of an ultrathin n-type GaN cap layer on p-type GaN emission layer, a p-n heterojunction is formed on the surface. According to the calculation results, it is found that Si atoms tend to replace Ga atoms to result in an n-type doped cap layer which contributes to the decreasing of work function. After the growth of n-type GaN cap layer, the atom structure near the p-type emission layer is changed while that away from the surface has no obvious variations. By analyzing the E-Mulliken charge distribution of emission surface with and without cap layer, it is found that the positive charge of Ga and Mg atoms in the emission layer decrease caused by the cap layer, while the negative charge of N atom increases. The conduction band moves downwards after the growth of cap layer. Si atom produces donor levels around the valence band maximum. The absorption coefficient of GaN emission layer decreases and the reflectivity increases caused by n-type GaN cap layer.
Fabrication and Enhanced Photoelectrochemical Performance of MoS₂/S-Doped g-C₃N₄ Heterojunction Film.

PubMed

Ye, Lijuan; Wang, Dan; Chen, Shijian

2016-03-02

We report on a novel MoS2/S-doped g-C3N4 heterojunction film with high visible-light photoelectrochemical (PEC) performance. The heterojunction films are prepared by CVD growth of S-doped g-C3N4 film on indium-tin oxide (ITO) glass substrates, with subsequent deposition of a low bandgap, 1.69 eV, visible-light response MoS2 layer by hydrothermal synthesis. Adding thiourea into melamine as the coprecursor not only facilitates the growth of g-C3N4 films but also introduces S dopants into the films, which significantly improves the PEC performance. The fabricated MoS2/S-doped g-C3N4 heterojunction film offers an enhanced anodic photocurrent of as high as ∼1.2 × 10(-4) A/cm(2) at an applied potential of +0.5 V vs Ag/AgCl under the visible light irradiation. The enhanced PEC performance of MoS2/S-doped g-C3N4 film is believed due to the improved light absorption and the efficient charge separation of the photogenerated charge at the MoS2/S-doped g-C3N4 interface. The convenient preparation of carbon nitride based heterojunction films in this work can be widely used to design new heterojunction photoelectrodes or photocatalysts with high performance for H2 evolution.
Deep ultraviolet photodetectors based on p-Si/ i-SiC/ n-Ga2O3 heterojunction by inserting thin SiC barrier layer

NASA Astrophysics Data System (ADS)

An, Yuehua; Zhi, Yusong; Wu, Zhenping; Cui, Wei; Zhao, Xiaolong; Guo, Daoyou; Li, Peigang; Tang, Weihua

2016-12-01

Deep ultraviolet photodetectors based on p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterojunctions were fabricated by laser molecular beam epitaxial (L-MBE), respectively. In compare with p-Si/ n-Ga2O3 heterostructure-based photodetector, the dark current of p-Si/ i-SiC/ n-Ga2O3-based photodetector decreased by three orders of magnitude, and the rectifying behavior was tuned from reverse to forward. In order to improve the quality of the photodetector, we reduced the oxygen vacancies of p-Si/ i-SiC/ n-Ga2O3 heterostructures by changing the oxygen pressure during annealing. As a result, the rectification ratio ( I F/ I R) of the fabricated photodetectors was 36 at 4.5 V and the photosensitivity was 5.4 × 105% under the 254 nm light illumination at -4.5 V. The energy band structure of p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterostructures was schematic drawn to explain the physic mechanism of enhancement of the performance of p-Si/ i-SiC/ n-Ga2O3 heterostructure-based deep UV photodetector by introduction of SiC layer.

Structural studies of n-type nc-Si-QD thin films for nc-Si solar cells

NASA Astrophysics Data System (ADS)

Das, Debajyoti; Kar, Debjit

2017-12-01

A wide optical gap nanocrystalline silicon (nc-Si) dielectric material is a basic requirement at the n-type window layer of nc-Si solar cells in thin film n-i-p structure on glass substrates. Taking advantage of the high atomic-H density inherent to the planar inductively coupled low-pressure (SiH4 + CH4)-plasma, development of an analogous material in P-doped nc-Si-QD/a-SiC:H network has been tried. Incorporation of C in the Si-network extracted from the CH4 widens the optical band gap; however, at enhanced PH3-dilution of the plasma spontaneous miniaturization of the nc-Si-QDs below the dimension of Bohr radius (∼4.5 nm) further enhances the band gap by virtue of the quantum size effect. At increased flow rate of PH3, dopant induced continuous amorphization of the intrinsic crystalline network is counterbalanced by the further crystallization promoted by the supplementary atomic-H extracted from PH3 (1% in H2) in the plasma, eventually holding a moderately high degree of crystallinity. The n-type wide band gap (∼1.93 eV) window layer with nc-Si-QDs in adequate volume fraction (∼52%) could furthermore be instrumental as an effective seed layer for advancing sequential crystallization in the i-layer of nc-Si solar cells with n-i-p structure in superstrate configuration.
Impact of Channel, Stress-Relaxed Buffer, and S/D Si1- x Ge x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering

NASA Astrophysics Data System (ADS)

Othman, Nurul Aida Farhana; Hatta, Sharifah Fatmadiana Wan Muhamad; Soin, Norhayati

2018-04-01

Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a promising performance booster to replace silicon (Si) due to its high holes mobility. This paper presents a three-dimensional simulation by the Sentaurus technology computer-aided design to study the effects of stressors—channel stress, stress-relaxed buffer (SRB), and source/drain (S/D) epitaxial stress—on different bases of FinFET, specifically silicon germanium (SiGe) and Ge-based, whereby the latter is achieved by manipulating the Ge mole fraction inside the three layers; their effects on the devices' figures-of-merits were recorded. The simulation generates an advanced calibration process, by which the drift diffusion simulation was adopted for ballistic transport effects. The results show that current enhancement in p-type FinFET (p-FinFET) with 110% is almost twice that in n-type FinFET (n-FinFET) with 57%, with increasing strain inside the channel suggesting that the use of strain is more effective for holes. In SiGe-based n-FinFET, the use of a high-strained SRB layer can improve the drive current up to 112%, while the high-strain S/D epitaxial for Ge-based p-FinFET can enhance the on-state current to 262%. Further investigations show that the channel and S/D doping are affecting the performances of SiGe-based FinFET with similar importance. It is observed that doping concentrations play an important role in threshold voltage adjustment as well as in drive current and subthreshold leakage improvements.
Superior photoelectrochemical properties of ZnO nanorods/poly(3-hexylthiophene) hybrid photoanodes

NASA Astrophysics Data System (ADS)

Majumder, T.; Hmar, J. J. L.; Dhar, S.; Mondal, S. P.

2017-06-01

Photoelectrochemical properties of ZnO nanorods (ZnO NRs) and poly(3-hexylthiophene) (P3HT) polymer hybrid photoanodes have been studied. The hybrid photoanodes demonstrated higher photoconversion efficiency, incident photon to current conversion efficiency (IPCE) and lower interfacial resistance compared to pristine ZnO nanorods and P3HT based electrodes. The origin of superior photoelectrochemical properties of ZnO/P3HT photoanodes has been explained using carrier transport mechanism at semiconductor/electrolyte junction. The stability of ZnO NRs/P3HT photoanode has been demonstrated.
SULFUR ISOTOPIC COMPOSITIONS OF SUBMICROMETER SiC GRAINS FROM THE MURCHISON METEORITE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Yuchen; Zinner, Ernst; Gallino, Roberto

2015-02-01

We report C, Si, N, S, Mg-Al, and Ca-Ti isotopic compositions of presolar silicon carbide (SiC) grains from the SiC-rich KJE size fraction (0.5-0.8 μm) of the Murchison meteorite. One thousand one hundred thirteen SiC grains were identified based on their C and Si isotopic ratios. Mainstream, AB, C, X, Y, and Z subtypes of SiC, and X-type silicon nitride (Si{sub 3}N{sub 4}) account for 81.4%, 5.7%, 0.1%, 1.5%, 5.8%, 4.9%, and 0.4%, respectively. Twenty-five grains with unusual Si isotopic ratios, including one C grain, 16 X grains, 1 Y grain, 5 Z grains, and 2 X-type Si{sub 3}N{sub 4} grainsmore » were selected for N, S, Mg-Al, and Ca-Ti isotopic analysis. The C grain is highly enriched in {sup 29}Si and {sup 30}Si (δ{sup 29}Si = 1345‰ ± 19‰, δ{sup 30}Si = 1272‰ ± 19‰). It has a huge {sup 32}S excess, larger than any seen before, and larger than that predicted for the Si/S supernova (SN) zone, providing evidence against the elemental fractionation model by Hoppe et al. Two SN models investigated here present a more satisfying explanation in terms of a radiogenic origin of {sup 32}S from the decay of short-lived {sup 32}Si (τ{sub 1/2} = 153 yr). Silicon-32 as well as {sup 29}Si and {sup 30}Si can be produced in SNe by short neutron bursts; evidence for initial {sup 44}Ti (τ{sub 1/2} = 60 yr) in the C grain is additional evidence for an SN origin. The X grains have marginal {sup 32}S excesses, much smaller than expected from their large {sup 28}Si excesses. Similarly, the Y and Z grains do not show the S-isotopic anomalies expected from their large Si isotopic anomalies. Low intrinsic S contents and contamination with isotopically normal S are the most likely explanations.« less
Composition and Band Gap Tailoring of Crystalline (GaN)1- x(ZnO) x Solid Solution Nanowires for Enhanced Photoelectrochemical Performance.

PubMed

Li, Jing; Liu, Baodan; Wu, Aimin; Yang, Bing; Yang, Wenjin; Liu, Fei; Zhang, Xinglai; An, Vladimir; Jiang, Xin

2018-05-07

Photoelectrochemical water splitting has emerged as an effective artificial photosynthesis technology to generate clean energy of H 2 from sunlight. The core issue in this reaction system is to develop a highly efficient photoanode with a large fraction of solar light absorption and greater active surface area. In this work, we take advantage of energy band engineering to synthesize (GaN) 1- x (ZnO) x solid solution nanowires with ZnO contents ranging from 10.3% to 47.6% and corresponding band gap tailoring from 3.08 to 2.77 eV on the basis of the Au-assisted VLS mechanism. The morphology of nanowires directly grown on the conductive substrate facilitates the charge transfer and simultaneously improves the surface reaction sites. As a result, a photocurrent approximately 10 times larger than that for a conventional powder-based photoanode is obtained, which indicates the potential of (GaN) 1- x (ZnO) x nanowires in the preparation of superior photoanodes for enhanced water splitting. It is anticipated that the water-splitting capability of (GaN) 1- x (ZnO) x nanowire can be further increased through alignment control for enhanced visible light absorption and reduction of charge transfer resistance.
Laser doping of boron-doped Si paste for high-efficiency silicon solar cells

NASA Astrophysics Data System (ADS)

Tomizawa, Yuka; Imamura, Tetsuya; Soeda, Masaya; Ikeda, Yoshinori; Shiro, Takashi

2015-08-01

Boron laser doping (LD) is a promising technology for high-efficiency solar cells such as p-type passivated locally diffused solar cells and n-type Si-wafer-based solar cells. We produced a printable phosphorus- or boron-doped Si paste (NanoGram® Si paste/ink) for use as a diffuser in the LD process. We used the boron LD process to fabricate high-efficiency passivated emitter and rear locally diffused (PERL) solar cells. PERL solar cells on Czochralski Si (Cz-Si) wafers yielded a maximum efficiency of 19.7%, whereas the efficiency of a reference cell was 18.5%. Fill factors above 79% and open circuit voltages above 655 mV were measured. We found that the boron-doped area effectively performs as a local boron back surface field (BSF). The characteristics of the solar cell formed using NanoGram® Si paste/ink were better than those of the reference cell.
Advances and recent trends in heterogeneous photo(electro)-catalysis for solar fuels and chemicals.

PubMed

Highfield, James

2015-04-15

In the context of a future renewable energy system based on hydrogen storage as energy-dense liquid alcohols co-synthesized from recycled CO2, this article reviews advances in photocatalysis and photoelectrocatalysis that exploit solar (photonic) primary energy in relevant endergonic processes, viz., H2 generation by water splitting, bio-oxygenate photoreforming, and artificial photosynthesis (CO2 reduction). Attainment of the efficiency (>10%) mandated for viable techno-economics (USD 2.00-4.00 per kg H2) and implementation on a global scale hinges on the development of photo(electro)catalysts and co-catalysts composed of earth-abundant elements offering visible-light-driven charge separation and surface redox chemistry in high quantum yield, while retaining the chemical and photo-stability typical of titanium dioxide, a ubiquitous oxide semiconductor and performance "benchmark". The dye-sensitized TiO2 solar cell and multi-junction Si are key "voltage-biasing" components in hybrid photovoltaic/photoelectrochemical (PV/PEC) devices that currently lead the field in performance. Prospects and limitations of visible-absorbing particulates, e.g., nanotextured crystalline α-Fe2O3, g-C3N4, and TiO2 sensitized by C/N-based dopants, multilayer composites, and plasmonic metals, are also considered. An interesting trend in water splitting is towards hydrogen peroxide as a solar fuel and value-added green reagent. Fundamental and technical hurdles impeding the advance towards pre-commercial solar fuels demonstration units are considered.
Copper Phthalocyanine-Functionalized Graphitic Carbon Nitride: A Hybrid Heterostructure toward Photoelectrochemical and Photocatalytic Degradation Applications.

PubMed

Liu, Zhong-Guo; Wan, Jia-Yun; Yang, Ze; Wang, Shi-Quan; Wang, Hang-Xing

2016-07-05

In this work, alcian blue 8GX (AB), a copper(II) phthalocyanine derivative, was employed to functionalize graphitic carbon nitride (g-C3 N4 ) for the preparation of a highly efficient photocatalyst. The approach relies on a facile AB-assisted ethanol/water mixed-solvent exfoliation of bulk g-C3 N4 . The as-prepared g-C3 N4 /AB hybrid possesses significantly enhanced solution dispersibility and photoelectrochemical performance resulting from the synergistic effect between g-C3 N4 and AB, which involves the optimization of intimate interfacial contact, extension of light absorption range, and enhancement of charge-transfer efficiency. This synergy contributes enormously to the photocatalytic degradation of rhodamine 6G (R6G) under light irradiation. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Titanium-dioxide nanotube p-n homojunction diode

NASA Astrophysics Data System (ADS)

Alivov, Yahya; Ding, Yuchen; Singh, Vivek; Nagpal, Prashant

2014-12-01

Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO2) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO2 nanotubes p-n homojunction. This TiO2:N/TiO2:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of -5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.
Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

NASA Astrophysics Data System (ADS)

Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

2010-03-01

It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.
Semiconductor-based photoelectrochemical water splitting at the limit of very wide depletion region

DOE PAGES

Liu, Mingzhao; Lyons, John L.; Yan, Danhua H.; ...

2015-11-23

In semiconductor-based photoelectrochemical (PEC) water splitting, carrier separation and delivery largely relies on the depletion region formed at the semiconductor/water interface. As a Schottky junction device, the trade-off between photon collection and minority carrier delivery remains a persistent obstacle for maximizing the performance of a water splitting photoelectrode. Here, it is demonstrated that the PEC water splitting efficiency for an n-SrTiO 3 (n-STO) photoanode is improved very significantly despite its weak indirect band gap optical absorption (α < 10⁴ cm⁻¹), by widening the depletion region through engineering its doping density and profile. Graded doped n-SrTiO 3 photoanodes are fabricated withmore » their bulk heavily doped with oxygen vacancies but their surface lightly doped over a tunable depth of a few hundred nanometers, through a simple low temperature re-oxidation technique. The graded doping profile widens the depletion region to over 500 nm, thus leading to very efficient charge carrier separation and high quantum efficiency (>70%) for the weak indirect transition. As a result, this simultaneous optimization of the light absorption, minority carrier (hole) delivery, and majority carrier (electron) transport by means of a graded doping architecture may be useful for other indirect band gap photocatalysts that suffer from a similar problem of weak optical absorption.« less
Photoelectrochemical water splitting with a SrTiO 3:Nb/SrTiO 3n +–n homojunction structure

DOE PAGES

Cen, Jiajie; Wu, Qiyuan; Yan, Danhua; ...

2016-12-07

An n +–n homojunction, which was constructed by thermal diffusion of niobium in STO, was found to make a significant impact on the performance of the STO photoanodes by affecting their depletion width.
Friction and Wear of Monolithic and Fiber Reinforced Silicon-Ceramics Sliding Against IN-718 Alloy at 25 to 800 C in Atmospheric Air at Ambient Pressure

NASA Technical Reports Server (NTRS)

Deadmore, Daniel L.; Sliney, Harold E.

1988-01-01

The friction and wear of monolithic and fiber reinforced Si-ceramics sliding against the nickel base alloy IN-718 at 25 to 800 C was measured. The monolithic materials tested were silicon carbide (SiC), fused silica (SiO2), syalon, silicon nitride (Si3N4) with W and Mg additives, and Si3N4 with Y2O3 additive. At 25 C fused silica had the lowest friction while Si3N4 (W,Mg type) had the lowest wear. At 800 C syalon had the lowest friction while Si3N4 (W,Mg type) and syalon had the lowest wear. The SiC/IN-718 couple had the lowest total wear at 25 C. At 800 C the fused silica/IN-718 couple exhibited the least total wear. SiC fiber reinforced reaction bonded silicon nitride (RBSN) composite material with a porosity of 32 percent and a fiber content of 23 vol percent had a lower coefficient of friction and wear when sliding parallel to the fiber direction than in the perpendicular at 25 C. The coefficient of friction for the carbon fiber reinforced borosilicate composite was 0.18 at 25 C. This is the lowest of all the couples tested. Wear of this material was about two decades smaller than that of the monolithic fused silica. This illustrates the large improvement in tribological properties which can be achieved in ceramic materials by fiber reinforcement. At higher temperatures the oxidation products formed on the IN-718 alloy are transferred to the ceramic by sliding action and forms a thin, solid lubricant layer which decreases friction and wear for both the monolithic and fiber reinforced composites.
Fully solar-powered photoelectrochemical conversion for simultaneous energy storage and chemical sensing.

PubMed

Wang, Yongcheng; Tang, Jing; Peng, Zheng; Wang, Yuhang; Jia, Dingsi; Kong, Biao; Elzatahry, Ahmed A; Zhao, Dongyuan; Zheng, Gengfeng

2014-06-11

We report the development of a multifunctional, solar-powered photoelectrochemical (PEC)-pseudocapacitive-sensing material system for simultaneous solar energy conversion, electrochemical energy storage, and chemical detection. The TiO2 nanowire/NiO nanoflakes and the Si nanowire/Pt nanoparticle composites are used as photoanodes and photocathodes, respectively. A stable open-circuit voltage of ∼0.45 V and a high pseudocapacitance of up to ∼455 F g(-1) are obtained, which also exhibit a repeating charging-discharging capability. The PEC-pseudocapacitive device is fully solar powered, without the need of any external power supply. Moreover, this TiO2 nanowire/NiO nanoflake composite photoanode exhibits excellent glucose sensitivity and selectivity. Under the sun light illumination, the PEC photocurrent shows a sensitive increase upon different glucose additions. Meanwhile in the dark, the open-circuit voltage of the charged pseudocapacitor also exhibits a corresponding signal over glucose analyte, thus serving as a full solar-powered energy conversion-storage-utilization system.
Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis.

PubMed

Tice, Jesse B; Chizmeshya, A V G; Tolle, J; D' Costa, V R; Menendez, J; Kouvetakis, J

2010-05-21

The (SiH₃)₃P hydride is introduced as a practical source for n-doping of group IV semiconductors and as a highly-reactive delivery agent of -(SiH₃)₂P functionalities in exploratory synthesis. In contrast to earlier methods, the compound is produced here in high purity quantitative yields via a new single-step method based on reactions of SiH₃Br and (Me₃Sn)₃P, circumventing the need for toxic and unstable starting materials. As an initial demonstration of its utility we synthesized monosubstituted Me₂M-P(SiH₃)₂ (M = Al, Ga, In) derivatives of Me₃M containing the (SiH₃)₂P ligand for the first time, in analogy to the known Me₂M-P(SiMe₃)₂ counterparts. A dimeric structure of Me₂M-P(SiH₃)₂ is proposed on the basis of spectroscopic characterizations and quantum chemical simulations. Next, in the context of materials synthesis, the (SiH₃)₃P compound was used to dope germanium for the first time by building a prototype p(++)Si(100)/i-Ge/n-Ge photodiode structure. The resultant n-type Ge layers contained active carrier concentrations of 3-4 × 10¹⁹ atoms cm⁻³ as determined by spectroscopic ellipsometry and confirmed by SIMS. Strain analysis using high resolution XRD yielded a Si content of 4 × 10²⁰ atoms cm⁻³ in agreement with SIMS and within the range expected for incorporating Si₃P type units into the diamond cubic Ge matrix. Extensive characterizations for structure, morphology and crystallinity indicate that the Si co-dopant plays essentially a passive role and does not compromise the device quality of the host material nor does it fundamentally alter its optical properties.
Physical and photoelectrochemical properties of the spinel LiMn2O4 and its application in photocatalysis

NASA Astrophysics Data System (ADS)

Douafer, S.; Lahmar, H.; Benamira, M.; Rekhila, G.; Trari, M.

2018-07-01

Nanocrystalline lithium manganese oxide (LiMn2O4), synthesized by the sol-gel method, crystallizes in the spinel structure. The physical, electrical, and photoelectrochemical properties were studied for the photocatalytic degradation of methyl orange, a toxic compound, under solar irradiation. The diffuse reflectance spectrum allowed the direct band gap (1.99 eV) to be calculated. The Fourier transform IR spectrum contained all the characteristic peaks of the spinel LiMn2O4, which exhibited n-type behavior. The thermal evolution of the electrical conductivity exhibited an Arrhenius-type behavior with an activation energy of 0.27 eV. The Mott-Schottky curve allowed the determination of the flat band potential (-0.24 V vs. the saturated calomel electrode) as well as the carrier density (1.78 × 1021 cm-3). The detoxification of water containing methyl orange with LiMn2O4 as a photocatalyst was successfully completed. Total degradation for an initial concentration of 10-4 M methyl orange at pH ∼3 and 25 °C was obtained in less than 5 h under solar irradiation. No adsorption was obtained in the dark in the presence of LiMn2O4.
Vincenzo LaSalvia | NREL

Science.gov Websites

;Utilization of Tabula Rasa to stabilize bulk lifetimes in n-Cz silicon for high-performance solar cell /SiOx/pc-Si passivated contacts to n-type Si solar cells." Presented at the 40th IEEE Photovoltaic , and P. Stradins. "Heterojunction rear passivated contact for high efficiency n-Cz Si solar cells
Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes.

PubMed

Sberna, Paolo M; Trifunovic, Miki; Ishihara, Ryoichi

2017-07-03

Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Si-based inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs. The devices, fabricated according to CMOS compatible processes at 350 °C, showed field effect mobilities up to 8 and 2 cm 2 /(V s) for n- and p-type TFTs, respectively. The presented method combines a low-cost coating technique with the usage of recycled material, opening a route to a convenient and sustainable production of large-area, flexible, and even disposable/single-use electronics.
Status of photoelectrochemical production of hydrogen and electrical energy

NASA Technical Reports Server (NTRS)

Byvik, C. E.; Walker, G. H.

1976-01-01

The efficiency for conversion of electromagnetic energy to chemical and electrical energy utilizing semiconductor single crystals as photoanodes in electrochemical cells was investigated. Efficiencies as high as 20 percent were achieved for the conversion of 330 nm radiation to chemical energy in the form of hydrogen by the photoelectrolysis of water in a SrTiO3 based cell. The SrTiO3 photoanodes were shown to be stable in 9.5 M NaOH solutions for periods up to 48 hours. Efficiencies of 9 percent were measured for the conversion of broadband visible radiation to hydrogen using n-type GaAs crystals as photoanodes. Crystals of GaAs coated with 500 nm of gold, silver, or tin for surface passivation show no significant change in efficiency. By suppressing the production of hydrogen in a CdSe-based photogalvanic cell, an efficiency of 9 percent was obtained in conversion of 633 nm light to electrical energy. A CdS-based photogalvanic cell produced a conversion efficiency of 5 percent for 500 nm radiation.
The system with zwitterionic lactose-based surfactant for complexation and delivery of small interfering ribonucleic acid—A structural and spectroscopic study

NASA Astrophysics Data System (ADS)

Skupin, Michalina; Sobczak, Krzysztof; Zieliński, Ryszard; Kozak, Maciej

2016-05-01

Systems suitable for the effective preparation of complexes with siRNA (small interfering RNA) are at the center of interest in the area of research work on the delivery of the RNA-based drugs (RNA-therapeutics). This article presents results of a study on the structural effects associated with siRNA complexation by a surfactant comprising a lactose group (N-(3-propanesulfone)-N-dodecyl-amino-beta-D-lactose hydrochloride, LA12). The double stranded siRNA oligomer (21 base pairs) used in this study is responsible for silencing a gene that can be important in the therapy of myotonic dystrophy type 1. The obtained siRNA/LA12 lipoplexes were studied using the methods of small angle scattering of synchrotron radiation, circular dichroism spectroscopy, Fourier transform infrared spectroscopy, and electrophoretic mobility tests. Lipoplexes form in solution stable lamellar or cubic phases. The surfactant selected for the study shows much lower cytotoxicity and good complexation abilities of siRNA than dicationic or polycationic surfactants.

The system with zwitterionic lactose-based surfactant for complexation and delivery of small interfering ribonucleic acid—A structural and spectroscopic study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skupin, Michalina; Sobczak, Krzysztof; Zieliński, Ryszard

Systems suitable for the effective preparation of complexes with siRNA (small interfering RNA) are at the center of interest in the area of research work on the delivery of the RNA-based drugs (RNA-therapeutics). This article presents results of a study on the structural effects associated with siRNA complexation by a surfactant comprising a lactose group (N-(3-propanesulfone)-N-dodecyl-amino-beta-D-lactose hydrochloride, LA12). The double stranded siRNA oligomer (21 base pairs) used in this study is responsible for silencing a gene that can be important in the therapy of myotonic dystrophy type 1. The obtained siRNA/LA12 lipoplexes were studied using the methods of small anglemore » scattering of synchrotron radiation, circular dichroism spectroscopy, Fourier transform infrared spectroscopy, and electrophoretic mobility tests. Lipoplexes form in solution stable lamellar or cubic phases. The surfactant selected for the study shows much lower cytotoxicity and good complexation abilities of siRNA than dicationic or polycationic surfactants.« less
Optimization of trypsins for influenza A/H1N1 virus replication in MDCK SI-6 cells, a novel MDCK cell line.

PubMed

Iskandar, Viska I; Sasaki, Yutaka; Yoshino, Naoto; Abubakar, Raden Z R; Sato, Shigehiro; Muraki, Yasushi

2018-02-01

A cell-based vaccine production method for influenza virus may be an effective and more rapid alternative to egg-based systems. For high-yield virus production, the effect of bovine, porcine, fungal, and recombinant trypsins on influenza A/H1N1 virus replication in MDCK SI-6 cells (SI-6 cells), a novel MDCK cell line developed by our research group, was examined. SI-6 cells infected with influenza A/H1N1 virus were incubated in the presence of four trypsin types at various concentrations, and virus yields in the culture medium were evaluated by a hemagglutination (HA) assay. Virus growth was most efficient in the presence of bovine and porcine trypsins. An analysis of the optimized concentration and definitive HA titer of each trypsin by Gaussian distribution revealed that comparable high virus yields (166.1 and 164.2 HAU/50μl) were obtained at the optimized concentrations of bovine (0.4μg/ml) and porcine (2.1μg/ml) trypsins, respectively, the yields of which were significantly higher than that of fungal and recombinant trypsins. We conclude that bovine and porcine trypsins are suitable for influenza A/H1N1 virus replication in SI-6 cells. This result complements our previous study and suggests the possible application of SI-6 cells to the development of cell-based influenza vaccines. Copyright © 2017 Elsevier B.V. All rights reserved.
Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells.

PubMed

Tang, Y B; Chen, Z H; Song, H S; Lee, C S; Cong, H T; Cheng, H M; Zhang, W J; Bello, I; Lee, S T

2008-12-01

Vertically aligned Mg-doped GaN nanorods have been epitaxially grown on n-type Si substrate to form a heterostructure for fabricating p-n heterojunction photovoltaic cells. The p-type GaN nanorod/n-Si heterojunction cell shows a well-defined rectifying behavior with a rectification ratio larger than 10(4) in dark. The cell has a high short-circuit photocurrent density of 7.6 mAlcm2 and energy conversion efficiency of 2.73% under AM 1.5G illumination at 100 mW/cm2. Moreover, the nanorod array may be used as an antireflection coating for solar cell applications to effectively reduce light loss due to reflection. This study provides an experimental demonstration for integrating one-dimensional nanostructure arrays with the substrate to directly fabricate heterojunction photovoltaic cells.
MoSe2 modified TiO2 nanotube arrays with superior photoelectrochemical performance

NASA Astrophysics Data System (ADS)

Zhang, Yaping; Zhu, Haifeng; Yu, Lianqing; He, Jiandong; Huang, Chengxing

2018-04-01

TiO2 nanotube arrays (TNTs) are first prepared by anodization Ti foils in ethylene glycol electrolyte. Then, MoSe2 deposites electrochemically on TNTs. The as-synthesized MoSe2/TiO2 composite has a much higher photocurrent density of 1.07 mA cm‑2 at 0 V than pure TNTs of 0.38 mA cm‑2, which suggests that the MoSe2/TiO2 composite film has optimum photoelectrocatalysis properties. The electron transport resistances of the MoSe2/TiO2 decreases to half of pure TiO2, at 295.6 ohm/cm2. Both photocurrent-time and Mott-Schottky plots indicate MoSe2 a p-type semiconductor characteristics. MoSe2/TiO2 composite can achieve a maximum 5 orders of magnitude enhancement in carrier density (4.650 × 1027 cm‑3) than that of pure TiO2 arrays. It can be attributed to p-n heterojunction formed between MoSe2 and TiO2, and the composite can be potentially applied in photoelectrochemical, photocatalysis fields.
Effect of partial nitridation on the structure and luminescence properties of melilite-type Ca2Al2SiO7:Eu2+ phosphor

NASA Astrophysics Data System (ADS)

Luo, Yi; Xia, Zhiguo

2014-09-01

Ca1.97Al2-xSi1+xO7-xNx:0.03Eu2+ (x = 0-0.4) phosphors have been prepared by using the high temperature solid-state reaction. The effect of phase structures, photoluminescence (PL) properties and the thermal stabilities have been investigated based on the substitution of Al-O bond in Ca2Al2SiO7:Eu2+ phosphor with Si-N bond. The XRD Rietveld refinement and 29Si NMR analysis results verify the introduction of partial Si-N bonds. It is found that the PL spectra shift to the blue region abnormally from 530 to 515 nm, and the possible mechanism has been proposed. The activation energy becomes large along with the nitridation process, which coincides with the explanation of configuration coordinate diagram.
Band alignment and p -type doping of ZnSnN2

NASA Astrophysics Data System (ADS)

Wang, Tianshi; Ni, Chaoying; Janotti, Anderson

2017-05-01

Composed of earth-abundant elements, ZnSnN2 is a promising semiconductor for photovoltaic and photoelectrochemical applications. However, basic properties such as the precise value of the band gap and the band alignment to other semiconductors are still unresolved. For instance, reported values for the band gap vary from 1.4 to 2.0 eV. In addition, doping in ZnSnN2 remains largely unexplored. Using density functional theory with the Heyd-Scuseria-Ernzerhof hybrid functional, we investigate the electronic structure of ZnSnN2, its band alignment to GaN and ZnO, and the possibility of p -type doping. We find that the position of the valence-band maximum of ZnSnN2 is 0.39 eV higher than that in GaN, yet the conduction-band minimum is close to that in ZnO, which suggests that achieving p -type conductivity is likely as in GaN, yet it may be difficult to control unintentional n -type conductivity as in ZnO. Among possible p -type dopants, we explore Li, Na, and K substituting on the Zn site. We show that while LiZn is a shallow acceptor, NaZn and KZn are deep acceptors, which we trace back to large local relaxations around the Na and K impurities due to the atomic size mismatches.
A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

NASA Astrophysics Data System (ADS)

Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu

2016-10-01

Due to the drawbacks of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, a new-type NEA GaN photocathodes with heterojunction surface dispense with Cs activation are proposed. This structure can be obtained through the coverage of an ultrathin n-type Si-doped GaN cap layer on the p-type Mg-doped GaN emission layer. The influences of the cap layer on the photocathode are calculated using DFT. This study indicates that the n-type cap layer can promote the photoemission characteristics of GaN photocathode and demonstrates the probability of the preparation of a NEA GaN photocathode with an n-type cap layer.
Zinc Tantalum Oxynitride (ZnTaO2N) Photoanode Modified with Cobalt Phosphate Layers for the Photoelectrochemical Oxidation of Alkali Water

PubMed Central

T. Weller, Mark

2018-01-01

Photoanodes fabricated by the electrophoretic deposition of a thermally prepared zinc tantalum oxynitride (ZnTaO2N) catalyst onto indium tin oxide (ITO) substrates show photoactivation for the oxygen evolution reaction (OER) in alkaline solutions. The photoactivity of the OER is further boosted by the photodeposition of cobalt phosphate (CoPi) layers onto the surface of the ZnTaO2N photoanodes. Structural, morphological, and photoelectrochemical (PEC) properties of the modified ZnTaO2N photoanodes are studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet visible (UV−Vis) diffuse reflectance spectroscopy, and electrochemical techniques. The presence of the CoPi layer significantly improved the PEC performance of water oxidation in an alkaline sulphate solution. The photocurrent-voltage behavior of the CoPi-modified ZnTaO2N anodes was improved, with the influence being more prominent at lower oxidation potentials. A stable photocurrent density of about 2.3 mA·cm−2 at 1.23 V vs. RHE was attained upon visible light illumination. Relative to the ZnTaO2N photoanodes, an almost three-fold photocurrent increase was achieved at the CoPi/ZnTaO2N photoelectrode. Perovskite-based oxynitrides are modified using an oxygen-evolution co-catalyst of CoPi, and provide a new dimension for enhancing the photoactivity of oxygen evolution in solar-assisted water-splitting reactions. PMID:29346306
Opto-electronic properties of P-doped nc-Si–QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kar, Debjit; Das, Debajyoti, E-mail: erdd@iacs.res.in

2016-07-14

With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si–QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si–C bonds in the amorphous matrix and the embedded high densitymore » tiny nc-Si–QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si–QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si–QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si–QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si–QD/a-SiC:H films grown at ∼300 °C, demonstrating wide optical gap ∼1.86–1.96 eV and corresponding high electrical conductivity ∼4.5 × 10{sup −1}–1.4 × 10{sup −2} S cm{sup −1}, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.« less
Gallium-Doped Poly-Si:Ga/SiO 2 Passivated Emitters to n-Cz Wafers With iV oc >730 mV

DOE PAGES

Young, David L.; Lee, Benjamin G.; Fogel, Derek; ...

2017-09-26

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2O 3, the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2. These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2. This lack of Ga pileup may imply fewer dopant-related defectsmore » in the SiO 2, compared with B dopants, and account for the excellent passivation.« less
Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

PubMed

Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

2014-09-10

Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.
Epitaxial graphene/SiC Schottky ultraviolet photodiode with orders of magnitude adjustability in responsivity and response speed

NASA Astrophysics Data System (ADS)

Yang, Junwei; Guo, Liwei; Guo, Yunlong; Hu, Weijie; Zhang, Zesheng

2018-03-01

A simple optical-electronic device that possesses widescale adjustability in its performance is specially required for realizing multifunctional applications as in optical communication and weak signal detectors. Here, we demonstrate an epitaxial graphene (EG)/n-type SiC Schottky ultraviolet (UV) photodiode with extremely widescale adjustability in its responsivity and response speed. It is found that the response speed of the device can be modulated over seven orders of magnitude from tens of nanoseconds to milliseconds by changing its working bias from 0 to -5 V, while its responsivity can be varied by three orders of magnitude. A 2.18 A/W responsivity is observed at -5 V when a 325 nm laser is irradiated on, corresponding to an external quantum efficiency over 800% ascribed to the trap induced internal gain mechanism. These performances of the EG/SiC Schottky photodiode are far superior to those based on traditional metal/SiC and indicate that the EG/n-type SiC Schottky diode is a good candidate for application in UV photodetection.
Insertion of Isocyanides into N-Si Bonds: Multicomponent Reactions with Azines Leading to Potent Antiparasitic Compounds.

PubMed

Kishore, Kranti G; Ghashghaei, Ouldouz; Estarellas, Carolina; Mestre, M Mar; Monturiol, Cristina; Kielland, Nicola; Kelly, John M; Francisco, Amanda Fortes; Jayawardhana, Shiromani; Muñoz-Torrero, Diego; Pérez, Belén; Luque, F Javier; Gámez-Montaño, Rocío; Lavilla, Rodolfo

2016-07-25

Trimethylsilyl chloride is an efficient activating agent for azines in isocyanide-based reactions, which then proceed through a key insertion of the isocyanide into a N-Si bond. The reaction is initiated by N activation of the azine, followed by nucleophilic attack of an isocyanide in a Reissert-type process. Finally, a second equivalent of the same or a different isocyanide inserts into the N-Si bond leading to the final adduct. The use of distinct nucleophiles leads to a variety of α-substituted dihydroazines after a selective cascade process. Based on computational studies, a mechanistic hypothesis for the course of these reactions was proposed. The resulting products exhibit significant activity against Trypanosoma brucei and T. cruzi, featuring favorable drug-like properties and safety profiles. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

NASA Astrophysics Data System (ADS)

Mori, Takahiro; Morita, Yukinori; Miyata, Noriyuki; Migita, Shinji; Fukuda, Koichi; Mizubayashi, Wataru; Masahara, Meishoku; Yasuda, Tetsuji; Ota, Hiroyuki

2015-02-01

The temperature dependence of the tunneling transport characteristics of Si diodes with an isoelectronic impurity has been investigated in order to clarify the mechanism of the ON-current enhancement in Si-based tunnel field-effect transistors (TFETs) utilizing an isoelectronic trap (IET). The Al-N complex impurity was utilized for IET formation. We observed three types of tunneling current components in the diodes: indirect band-to-band tunneling (BTBT), trap-assisted tunneling (TAT), and thermally inactive tunneling. The indirect BTBT and TAT current components can be distinguished with the plot described in this paper. The thermally inactive tunneling current probably originated from tunneling consisting of two paths: tunneling between the valence band and the IET trap and tunneling between the IET trap and the conduction band. The probability of thermally inactive tunneling with the Al-N IET state is higher than the others. Utilization of the thermally inactive tunneling current has a significant effect in enhancing the driving current of Si-based TFETs.
Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Central Research Laboratory, Bharat Electronics, Bangalore 560 013; Bhat, Thirumaleshwara N.

Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics ofmore » a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.« less
Photoelectrochemical determination of tert-butylhydroquinone in edible oil samples employing CdSe/ZnS quantum dots and LiTCNE.

PubMed

Monteiro, Thatyara Oliveira; Tanaka, Auro Atsushi; Damos, Flávio Santos; Luz, Rita de Cássia Silva

2017-07-15

A novel photoelectrochemical sensor was developed for determination of tert-butyl-hydroquinone (TBHQ) in edible vegetable oils, based on CdSe/ZnS core-shell quantum dots sensitized with lithium tetracyanoethylenide (LiTCNE). The CdSe/ZnS/LiTCNE photoelectrochemical sensor presented a TBHQ photocurrent about 13-fold higher and a charge transfer resistance 62-fold lower than observed for a CdSe/ZnS sensor. The photoelectrochemical sensor showed selectivity to TBHQ, with a high photocurrent for this antioxidant compared to the photocurrent responses for other phenolic antioxidants. The CdSe/ZnS/LiTCNE photoelectrochemical sensor presented a linear range from 0.6 to 250μmolL -1 , sensitivity of 0.012μALμmol -1 , and a limit of detection of 0.21μmolL -1 for TBHQ, under optimized experimental conditions. The sensor was successfully employed in the analysis of edible oil samples, with recoveries of between 98.25% and 99.83% achieved. Copyright © 2017 Elsevier Ltd. All rights reserved.
Influence of barrier absorption properties on laser patterning thin organic films

NASA Astrophysics Data System (ADS)

Naithani, Sanjeev; Mandamparambil, Rajesh; van Assche, Ferdie; Schaubroeck, David; Fledderus, Henri; Prenen, An; Van Steenberge, Geert; Vanfleteren, Jan

2012-06-01

This paper presents a study of selective ablation of thin organic films (LEP- Light Emitting Polymer, PEDOT:PSS- Poly 3,4-ethylenedioxythiophene: polystyrene sulfonate) by using 248 nm Excimer laser, on various kinds of multilayered SiN barrier foils for the development of Organic Light Emitting Diodes (OLED). Different Silicon Nitride (SiN) barrier foils with dedicated absorption spectra are taken into account for this purpose. The drive for looking into different types of SiN originates from the fact that the laser selective removal of a polymer without damage to the barrier layer underneath is challenging in the dynamic laser processing of thin films. The barrier is solely responsible for the proper encapsulation of the OLED stack. The main limitation of current OLED design is its shorter life span, which is directly related to the moisture or water permeation into the stack, leading to black spots. An optimization of laser parameters like fluence and number of shots has been carried out for the various types of SiN barrier foils. We are able to obtain a wider working process window for the selective removal of LEP and PEDOT:PSS from SiN barrier, by variation of the different types of SiN.
Relationship of Water Content With Silicon and Fluorine Contents of Silicone-Hydrogel Contact Lens Materials.

PubMed

Dupre, Terin E; Benjamin, William J

2018-06-25

The relationship between water (W) content and silicon (Si) content of silicone-hydrogel (SiHy) contact lens materials was inspected using identical methodologies, equipment, and operators for materials composing 16 types of commercially available SiHy contact lenses. Fluorine (F) content was included in the analysis for the three materials also containing a fluoropolymer. One type of lens consisted of a bulk SiHy material coated with thin layers of conventional hydrogel. SiHy materials were obtained in the form of 16 contact lens brands purchased on the open market in a common range of refractive powers from -3 to +6 D in single lots. All test lenses were equilibrated at room temperature in a standard saline recommended in the American National Standards Institute Z80.20-2016 and International Organization for Standardization (ISO) 18369-4:2017 standards. W content was obtained gravimetrically, in %, according to those standards for 16 lenses of each SiHy material. Si content was determined in % using inductively coupled plasma optical emission spectroscopy for four digested lenses of each material. F content was determined in % using an ion-selective electrode for four combusted lenses of each of the three fluorinated SiHy materials. W and Si contents of the bulk SiHy material of the coated lens were estimated by computational exclusion of the hydrogel layers. The linear coefficients of determination (R, n=16) were -0.7576 (relating mean dry Si content [n=4] to mean W content [n=16]) and -0.8819 (relating mean hydrated Si content [n=4] to mean W content [n=16]). When the 4 SiHy materials that were fluorinated or coated were excluded from the analysis, the R values (n=12) were -0.8869 and -0.9263, respectively. When F contents and the coating were added to the assessments, the linear coefficients of determination (R, n=16) became -0.8948 (relating mean dry [Si+F] content to mean W content) and -0.9397 (relating mean hydrated [Si+F] content to mean W content). There is a fundamental negative linear relationship between Si and W contents for SiHy contact lens materials above 35% W content that is followed when F content and hydrogel coatings are empirically added to the analysis below 35% W content. The relationship was tightest for hydrated (Si+F) content and W content, for which the regression equation had an R of -0.9397: (Si+F)=-0.3073 (W)+22.148. The relationship between (Si+F) and W therefore seems to be based on composition rather than structure of available SiHy contact lens materials.
Band structure engineering of semiconductors for enhanced photoelectrochemical water splitting: The case of TiO2

NASA Astrophysics Data System (ADS)

Yin, Wan-Jian; Tang, Houwen; Wei, Su-Huai; Al-Jassim, Mowafak M.; Turner, John; Yan, Yanfa

2010-07-01

Here, we propose general strategies for the rational design of semiconductors to simultaneously meet all of the requirements for a high-efficiency, solar-driven photoelectrochemical (PEC) water-splitting device. As a case study, we apply our strategies for engineering the popular semiconductor, anatase TiO2 . Previous attempts to modify known semiconductors such as TiO2 have often focused on a particular individual criterion such as band gap, neglecting the possible detrimental consequence to other important criteria. Density-functional theory calculations reveal that with appropriate donor-acceptor coincorporation alloys with anatase TiO2 hold great potential to satisfy all of the criteria for a viable PEC device. We predict that (Mo, 2N) and (W, 2N) are the best donor-acceptor combinations in the low-alloy concentration regime whereas (Nb, N) and (Ta, N) are the best choice of donor-acceptor pairs in the high-alloy concentration regime.
Novel photoelectrochemical immunosensor for disease-related protein assisted by hemin/G-quadruplex-based DNAzyme on gold nanoparticles to enhance cathodic photocurrent on p-CuBi2O4 semiconductor.

PubMed

Lv, Shuzhen; Zhang, Kangyao; Lin, Zhenzhen; Tang, Dianping

2017-10-15

A novel p-type semiconductor material (p-CuBi 2 O 4 ) is designed for the construction of split-type photoelectrochemical (PEC) immunosensor for alpha-fetoprotein (AFP) with the hemin assistant to enhance the cathodic photocurrent. Initially, the photocathode of PEC immunosensor is fabricated by p-CuBi 2 O 4 on a layer of gold nanoparticles (AuNPs, as a front contact of p-CuBi 2 O 4 ) to enhance the efficiency of charge separation. In the presence of target AFP, a sandwich-type immunoreaction was carried out in capture antibody-coated microplate by using detection antibody and hemin-based G-quadruplex (labeled on the AuNP) as the signal probe. Upon exonuclease I (Exo I) introduction, the enzyme digested the hemin/G-quadruplex-based DNAzyme to release the hemin[Fe(III)], which captured the generated electrons of p-CuBi 2 O 4 -based photocathode to enhance photocurrent via the reduction of hemin[Fe(III)] to hemin[Fe(II)] in PEC detection system. Under the optimal conditions, the split-type photocathodic immunosensor showed a wide linear dynamic range from 50pgmL -1 to 20ngmL -1 at a limit of detection (LOD) of 14.7pgmL -1 toward target AFP. Moreover, the PEC immunosensor also displayed high specificity and good reproducibility. Favorably, method accuracy was evaluated to analyze human serum specimens, and gave matched-well results in comparison with commercially available enzyme-linked immunosorbent assay (ELISA) method. Copyright © 2017 Elsevier B.V. All rights reserved.

Enhanced Photoelectrocatalytic Activity of BiOI Nanoplate-Zinc Oxide Nanorod p-n Heterojunction.

PubMed

Kuang, Pan-Yong; Ran, Jing-Run; Liu, Zhao-Qing; Wang, Hong-Juan; Li, Nan; Su, Yu-Zhi; Jin, Yong-Gang; Qiao, Shi-Zhang

2015-10-19

The development of highly efficient and robust photocatalysts has attracted great attention for solving the global energy crisis and environmental problems. Herein, we describe the synthesis of a p-n heterostructured photocatalyst, consisting of ZnO nanorod arrays (NRAs) decorated with BiOI nanoplates (NPs), by a facile solvothermal method. The product thus obtained shows high photoelectrochemical water splitting performance and enhanced photoelectrocatalytic activity for pollutant degradation under visible light irradiation. The p-type BiOI NPs, with a narrow band gap, not only act as a sensitizer to absorb visible light and promote electron transfer to the n-type ZnO NRAs, but also increase the contact area with organic pollutants. Meanwhile, ZnO NRAs provide a fast electron-transfer channel, thus resulting in efficient separation of photoinduced electron-hole pairs. Such a p-n heterojunction nanocomposite could serve as a novel and promising catalyst in energy and environmental applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori

Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH₃) or diborane (B₂H₆) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainlymore » from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10¹⁸ to 10¹⁹cm⁻³ for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.« less
Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Zheng; Lü, Tie-Yu; Wang, Hui-Qiong

We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type) semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature,more » indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.« less
Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Yuguo; Upadhyaya, Vijaykumar; Chen, Chia-Wei

This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids,more » this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.« less
Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

NASA Astrophysics Data System (ADS)

Defresne, A.; Plantevin, O.; Roca i Cabarrocas, Pere

2016-12-01

Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (<200°C) using PECVD. However, such passivation layers, in particular p-type a-Si:H, show a dramatic degradation in passivation quality above 200°C. Yet, annealing at 300 - 400°C the TCO layer and metallic contacts is highly desirable to reduce the contact resistance as well as the TCO optical absorption. In this work, we show that as expected, ion implantation (5 - 30 keV) introduces defects at the c-Si/a-Si:H interface which strongly degrade the effective lifetime, down to a few micro-seconds. However, the passivation quality can be restored and lifetime values can be improved up to 2 ms over the initial value with annealing. We show here that effective lifetimes above 1 ms can be maintained up to 380°C, opening up the possibility for higher process temperatures in silicon heterojunction device fabrication.
The Association Between Cognitive Performance and Speech-in-Noise Perception for Adult Listeners: A Systematic Literature Review and Meta-Analysis

PubMed Central

Allen, Harriet A.; Henshaw, Helen; Heinrich, Antje

2017-01-01

Published studies assessing the association between cognitive performance and speech-in-noise (SiN) perception examine different aspects of each, test different listeners, and often report quite variable associations. By examining the published evidence base using a systematic approach, we aim to identify robust patterns across studies and highlight any remaining gaps in knowledge. We limit our assessment to adult unaided listeners with audiometric profiles ranging from normal hearing to moderate hearing loss. A total of 253 articles were independently assessed by two researchers, with 25 meeting the criteria for inclusion. Included articles assessed cognitive measures of attention, memory, executive function, IQ, and processing speed. SiN measures varied by target (phonemes or syllables, words, and sentences) and masker type (unmodulated noise, modulated noise, >2-talker babble, and ≤2-talker babble. The overall association between cognitive performance and SiN perception was r = .31. For component cognitive domains, the association with (pooled) SiN perception was as follows: processing speed (r = .39), inhibitory control (r = .34), working memory (r = .28), episodic memory (r = .26), and crystallized IQ (r = .18). Similar associations were shown for the different speech target and masker types. This review suggests a general association of r≈.3 between cognitive performance and speech perception, although some variability in association appeared to exist depending on cognitive domain and SiN target or masker assessed. Where assessed, degree of unaided hearing loss did not play a major moderating role. We identify a number of cognitive performance and SiN perception combinations that have not been tested and whose future investigation would enable further fine-grained analyses of these relationships. PMID:29237334
The Association Between Cognitive Performance and Speech-in-Noise Perception for Adult Listeners: A Systematic Literature Review and Meta-Analysis.

PubMed

Dryden, Adam; Allen, Harriet A; Henshaw, Helen; Heinrich, Antje

2017-01-01

Published studies assessing the association between cognitive performance and speech-in-noise (SiN) perception examine different aspects of each, test different listeners, and often report quite variable associations. By examining the published evidence base using a systematic approach, we aim to identify robust patterns across studies and highlight any remaining gaps in knowledge. We limit our assessment to adult unaided listeners with audiometric profiles ranging from normal hearing to moderate hearing loss. A total of 253 articles were independently assessed by two researchers, with 25 meeting the criteria for inclusion. Included articles assessed cognitive measures of attention, memory, executive function, IQ, and processing speed. SiN measures varied by target (phonemes or syllables, words, and sentences) and masker type (unmodulated noise, modulated noise, >2-talker babble, and ≤2-talker babble. The overall association between cognitive performance and SiN perception was r = .31. For component cognitive domains, the association with (pooled) SiN perception was as follows: processing speed ( r = .39), inhibitory control ( r = .34), working memory ( r = .28), episodic memory ( r = .26), and crystallized IQ ( r = .18). Similar associations were shown for the different speech target and masker types. This review suggests a general association of r≈.3 between cognitive performance and speech perception, although some variability in association appeared to exist depending on cognitive domain and SiN target or masker assessed. Where assessed, degree of unaided hearing loss did not play a major moderating role. We identify a number of cognitive performance and SiN perception combinations that have not been tested and whose future investigation would enable further fine-grained analyses of these relationships.
Silicon-germanium and platinum silicide nanostructures for silicon based photonics

NASA Astrophysics Data System (ADS)

Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

2017-05-01

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr < 600°C) forms on the wetting layer. Long-term annealing of granular films at the same conditions results in formation of c(4x2)-reconstructed wetting layer typical to high-temperature MBE (Tgr < 600°C) and huge clusters of Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.
Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide

NASA Astrophysics Data System (ADS)

Weng, M. H.; Clark, D. T.; Wright, S. N.; Gordon, D. L.; Duncan, M. A.; Kirkham, S. J.; Idris, M. I.; Chan, H. K.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2017-05-01

A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300 °C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2000 h at 300 °C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1000 h at 300 °C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realise sensor interface circuits capable of operating above 300 °C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.
Fast determination of the current loss mechanisms in textured crystalline Si-based solar cells

NASA Astrophysics Data System (ADS)

Nakane, Akihiro; Fujimoto, Shohei; Fujiwara, Hiroyuki

2017-11-01

A quite general device analysis method that allows the direct evaluation of optical and recombination losses in crystalline silicon (c-Si)-based solar cells has been developed. By applying this technique, the current loss mechanisms of the state-of-the-art solar cells with ˜20% efficiencies have been revealed. In the established method, the optical and electrical losses are characterized from the analysis of an experimental external quantum efficiency (EQE) spectrum with very low computational cost. In particular, we have performed the EQE analyses of textured c-Si solar cells by employing the experimental reflectance spectra obtained directly from the actual devices while using flat optical models without any fitting parameters. We find that the developed method provides almost perfect fitting to EQE spectra reported for various textured c-Si solar cells, including c-Si heterojunction solar cells, a dopant-free c-Si solar cell with a MoOx layer, and an n-type passivated emitter with rear locally diffused solar cell. The modeling of the recombination loss further allows the extraction of the minority carrier diffusion length and surface recombination velocity from the EQE analysis. Based on the EQE analysis results, the current loss mechanisms in different types of c-Si solar cells are discussed.
A series of BCN nanosheets with enhanced photoelectrochemical performances

NASA Astrophysics Data System (ADS)

Li, Junqi; Lei, Nan; Hao, Hongjuan; Zhou, Jian

2017-03-01

A series of flake-like BCN compounds were produced by calcination at different reaction temperatures via thermal substitution of C atoms with B atoms of boric acid substructures in graphitic carbon nitrides (g-C3N4). The structural and optical properties of the samples were characterized by XRD, TEM, HRTEM, XPS and UV-vis absorption. The photoelectrochemical (PEC) performance of all samples were characterized through photocurrent and electrochemical impedance spectroscopy (EIS) measurement. The test results demonstrated that BCN nanosheets exhibited higher PEC performance with increasing substituted amount of boron.
Structure-transfection activity relationships in a series of novel cationic lipids with heterocyclic head-groups.

PubMed

Ivanova, Ekaterina A; Maslov, Mikhail A; Kabilova, Tatyana O; Puchkov, Pavel A; Alekseeva, Anna S; Boldyrev, Ivan A; Vlassov, Valentin V; Serebrennikova, Galina A; Morozova, Nina G; Zenkova, Marina A

2013-11-07

Cationic liposomes are promising candidates for the delivery of various therapeutic nucleic acids. Here, we report a convenient synthesis of carbamate-type cationic lipids with various hydrophobic domains (tetradecanol, dialkylglycerol, cholesterol) and positively charged head-groups (pyridinium, N-methylimidazolium, N-methylmorpholinium) and data on the structure-transfection activity relationships. It was found that single-chain lipids possess high surface activity, which correlates with high cytotoxicity due to their ability to disrupt the cellular membrane by combined hydrophobic and electrostatic interactions. Liposomes containing these lipids also display high cytotoxicity with respect to all cell lines. Irrespective of chemical structures, all cationic lipids form liposomes with similar sizes and surface potentials. The characteristics of complexes composed of cationic liposomes and nucleic acids depend mostly on the type of nucleic acid and P/N ratios. In the case of oligodeoxyribonucleotide delivery, the transfection activity depends on the type of cationic head-group regardless of the type of hydrophobic domain: all types of cationic liposomes mediate efficient oligonucleotide transfer into 80-90% of the eukaryotic cells, and liposomes based on lipids with N-methylmorpholinium cationic head-group display the highest transfection activity. In the case of plasmid DNA and siRNA, the type of hydrophobic domain determines the transfection activity: liposomes composed of cholesterol-based lipids were the most efficient in DNA transfer, while liposomes containing glycerol-based lipids exhibited reasonable activity in siRNA delivery under serum-free conditions.
Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Nakatani, Katsutoshi; Kawai, Hiroji; Ao, Jin-Ping; Ohno, Yasuo

To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2 × 1017cm-3, p-type, which is well consistent with the Mg concentration obtained from secondary ion mass spectroscopy (SIMS) measurement.
Cu2O-tipped ZnO nanorods with enhanced photoelectrochemical performance for CO2 photoreduction

NASA Astrophysics Data System (ADS)

Iqbal, Muzaffar; Wang, Yanjie; Hu, Haifeng; He, Meng; Hassan Shah, Aamir; Lin, Lin; Li, Pan; Shao, Kunjuan; Reda Woldu, Abebe; He, Tao

2018-06-01

The design of Cu2O-tipped ZnO nanorods is proposed here aiming at enhanced photoelectrochemical properties. The tip-selective deposition of Cu2O is confirmed by scanning transmission electron microscopy (STEM). The photoinduced charge behavior like charge generation, separation and transport has been thoroughly studied by UV-vis absorption analysis and different photoelectrochemical characterizations, including transient photocurrent, incident photon-to-current efficiency (IPCE), electrochemical impedance spectroscopy (EIS), intensity-modulated photocurrent spectroscopy (IMPS), and Mott-Schottky measurements. The photoelectrochemical characterizations clearly indicate that ZnO/Cu2O structures exhibit much higher performance than pristine ZnO, due to the formation of p-n junction, as well as the tip selective growth of Cu2O on ZnO. Photocatalytic CO2 reduction in aqueous solution under UV-visible light illumination shows that CO is the main product, and with the increase of the Cu2O content in the heterostructure, the CO yield increases. This work shows that Cu2O-tipped ZnO nanorods possess improved behavior of charge generation, separation and transport, which may work as a potential candidate for photocatalytic CO2 reduction.
Integrating a dual-silicon photoelectrochemical cell into a redox flow battery for unassisted photocharging.

PubMed

Liao, Shichao; Zong, Xu; Seger, Brian; Pedersen, Thomas; Yao, Tingting; Ding, Chunmei; Shi, Jingying; Chen, Jian; Li, Can

2016-05-04

Solar rechargeable flow cells (SRFCs) provide an attractive approach for in situ capture and storage of intermittent solar energy via photoelectrochemical regeneration of discharged redox species for electricity generation. However, overall SFRC performance is restricted by inefficient photoelectrochemical reactions. Here we report an efficient SRFC based on a dual-silicon photoelectrochemical cell and a quinone/bromine redox flow battery for in situ solar energy conversion and storage. Using narrow bandgap silicon for efficient photon collection and fast redox couples for rapid interface charge injection, our device shows an optimal solar-to-chemical conversion efficiency of ∼5.9% and an overall photon-chemical-electricity energy conversion efficiency of ∼3.2%, which, to our knowledge, outperforms previously reported SRFCs. The proposed SRFC can be self-photocharged to 0.8 V and delivers a discharge capacity of 730 mAh l(-1). Our work may guide future designs for highly efficient solar rechargeable devices.
Photoluminescence Probing of Complex H2O Adsorption on InGaN/GaN Nanowires.

PubMed

Maier, Konrad; Helwig, Andreas; Müller, Gerhard; Hille, Pascal; Teubert, Jörg; Eickhoff, Martin

2017-02-08

We demonstrate that the complex adsorption behavior of H 2 O on InGaN/GaN nanowire arrays is directly revealed by their ambient-dependent photoluminescence properties. Under low-humidity, ambient-temperature, and low-excitation-light conditions, H 2 O adsorbates cause a quenching of the photoluminescence. In contrast, for high humidity levels, elevated temperature, and high excitation intensity, H 2 O adsorbates act as efficient photoluminescence enhancers. We show that this behavior, which can only be detected due to the low operation temperature of the InGaN/GaN nanowires, can be explained on the basis of single H 2 O adsorbates forming surface recombination centers and multiple H 2 O adsorbates forming surface passivation layers. Reversible creation of such passivation layers is induced by the photoelectrochemical splitting of adsorbed water molecules and by the interaction of reactive H 3 O + and OH - ions with photoactivated InGaN surfaces. Due to electronic coupling of adsorbing molecules with photoactivated surfaces, InGaN/GaN nanowires act as sensitive nanooptical probes for the analysis of photoelectrochemical surface processes.
Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer

NASA Astrophysics Data System (ADS)

Hussain, Babar

The conversion efficiency of conventional silicon (Si) photovoltaic cells has not been improved significantly during last two decades but their cost decreased dramatically during this time. However, the higher price-per-watt of solar cells is still the main bottleneck in their widespread use for power generation. Therefore, new materials need to be explored for the fabrication of solar cells potentially with lower cost and higher efficiency. The n-type zinc oxide (n-ZnO) and p-type Si (p-Si) based single heterojunction solar cell (SHJSC) is one of the several attempts to replace conventional Si single homojunction solar cell technology. There are three inadequacies in the literature related to n-ZnO/p-Si SHJSC: (1) a detailed theoretical analysis to evaluate potential of the solar cell structure, (2) inconsistencies in the reported value of open circuit voltage (VOC) of the solar cell, and (3) lower value of experimentally achieved VOC as compared to theoretical prediction based on band-bending between n-ZnO and p-Si. Furthermore, the scientific community lacks consensus on the optimum growth parameters of ZnO. In this dissertation, I present simulation and experimental results related to n-ZnO/p-Si SHJSC to fill the gaps mentioned above. Modeling and simulation of the solar cell structure are performed using PC1D and AFORS-HET software taking practical constraints into account to explore the potential of the structure. Also, unnoticed benefits of ZnO in solar cells such as an additional antireflection (AR) effect and low temperature deposition are highlighted. The growth parameters of ZnO using metal organic chemical vapor deposition and sputtering are optimized. The structural, optical, and electrical characterization of ZnO thin films grown on sapphire and Si substrates is performed. Several n-ZnO/p-Si SHJSC devices are fabricated to confirm the repeatability of the VOC. Moreover, the AR effect of ZnO while working as an n-type layer is experimentally verified. The spatial analysis for thickness uniformity and optical quality of ZnO films is carried out. These properties turn out to play a fundamental role in device performance and so far have been overlooked by the research community. Three different materials are used as a quantum buffer layer at the interface of ZnO and Si to suppress the interface states and improve the VOC. The best measured value of VOC of 359 mV is achieved using amorphous-ZnO (a-ZnO) as the buffer layer at the interface. Finally, supplementary simulations are performed to optimize the valence-band and conduction-band offsets by engineering the bandgap and electron affinity of ZnO. After we published our initial results related to the feasibility of n-ZnO/p-Si SHJSC [Sol. Energ. Mat. Sol. Cells 139 (2015) 95-100], different research groups have fabricated and reported the solar cell performance with the best efficiency of 7.1% demonstrated very recently by Pietruszka et al. [Sol. Energ. Mat. Sol. Cells 147 (2016) 164-170]. We conclude that major challenge in n-ZnO/p-Si SHJSC is to overcome Fermi-level pinning at the hetero-interface. A potential solution is to use the appropriate material as buffer layer which is confirmed by observing an improvement in VOC using a-ZnO at the interface as buffer layer. Once the interface quality is improved and the experimental value of VOC matched the theoretical prediction, the n-ZnO/p-Si SHJSC can potentially have significant contribution in solar cells industry.
Stable N-CuInSe.sub.2 /iodide-iodine photoelectrochemical cell

DOEpatents

Cahen, David; Chen, Yih W.

1985-01-01

In a photoelectrochemical solar cell, stable output and solar efficiency in excess of 10% are achieved with a photoanode of n-CuInSe.sub.2 electrode material and an iodine/iodide redox couple used in a liquid electrolyte. The photoanode is prepared by treating the electrode material by chemical etching, for example in Br.sub.2 /MeOH; heating the etched electrode material in air or oxygen; depositing a surface film coating of indium on the electrode material after the initial heating; and thereafter again heating the electrode material in air or oxygen to oxidize the indium. The electrolyte is treated by the addition of Cu.sup.+ or Cu.sup.2+ salts and In.sup.3+ salts.
Stable n-CuInSe/sub 2/iodide-iodine photoelectrochemical cell

DOEpatents

Cahen, D.; Chen, Y.W.

1984-09-20

In a photoelectrochemical solar cell, stable output and solar efficiency in excess of 10% are achieved with a photoanode of n-CuInSe/sub 2/ electrode material and an iodine/iodide redox couple used in a liquid electrolyte. The photoanode is prepared by treating the electrode material by chemical etching, for example in Br/sub 2//MeOH; heating the etched electrode material in air or oxygen; depositing a surface film coating of indium on the electrode material after the initial heating; and thereafter again heating the electrode material in air or oxygen to oxidize the indium. The electrolyte is treated by the addition of Cu/sup +/ or Cu/sup 2 +/ salts and in In/sup 3 +/ salts.
Amplification of the signal in triode structures of ion detectors based on 6H-SIC epitaxial films

NASA Astrophysics Data System (ADS)

Lebedev, A. A.; Strokan, N. B.; Ivanov, A. M.; Davydov, D. V.; Savkina, N. S.; Bogdanova, E. V.; Kuznetsov, A. N.; Yakimova, R.

2001-12-01

The possibility of about 50 times the inneramplification of signals in SiC-based detectors of short-range ions is shown. The detector has an n-p-n+-like structure, where the p-type base was grown epitaxially on a 6H n+-SiC substrate. To complete the structure a Schottky barrier was made on top. Detector parameters were investigated in a "floating base" regime. Alpha particles from 244Cm were used and the augmentation of signal (E) with increasing applied voltage (U) was investigated. A superlinear increase of E was observed with a significant (tens of times) amplification of the introduced by the alpha particle nonequilibrium charge. It was also found that the nonuniformity of the diffusion-drift carrier transport parameters in the films does not exceed 10%.

Impact of Laser Radiation on Microhardness of a Semiconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Medvid', A.; Onufrijevs, P.; Chiradze, G.

2011-12-23

It was found that strongly absorbed Nd:YAG laser radiation leads to a non-monotonous dependence of microhardness of p- and n-type Si crystals on laser radiation. This dependence is characterized by two maxima for p-Si and one maximum for n-Si crystals. In both cases the increase of microhardness at higher laser intensity is explained by formation of mechanically compressed layer at the irradiated surface due to concentration of the interstitial atoms of Si at the surface in temperature gradient field. The decrease of the microhardness is explained by formation of nano-cones as a result of plastic deformation of the mechanically stressedmore » layer. The additional maximum at lower laser intensity for p-Si crystal is explained by p-n type inversion of Si conductivity.« less
Alkali metal complexes of a phosphine-borane-stabilised carbanion: influence of co-ligands on structure.

PubMed

Izod, Keith; Wills, Corinne; Clegg, William; Harrington, Ross W

2007-09-07

The adducts [[(Me(3)Si)(2){Me(2)P(BH(3))}C]K(L)(n)](m) [L = THF, n = 0.5, m = infinity (2a); L = tmeda (2b), pmdeta (2c), n = 1, m = 2] may be synthesised by treatment of solvent-free [[(Me(3)Si)(2){Me(2)P(BH(3))}C]K](infinity) (2) with the corresponding Lewis base (tmeda = N,N,N',N'-tetramethylethylenediamine; pmdeta = N,N,N',N'',N''-pentamethyldiethylenetriamine). X-Ray crystallography reveals that, whereas 2 crystallises with a complex 2-dimensional sheet structure, 2a crystallises as a ribbon-type one-dimensional polymer and both 2b and 2c crystallise as dimers. The corresponding complex with 12-crown-4, [K(12-crown-4)(2)][(Me(3)Si)(2){Me(2)P(BH(3))}C] (2d) crystallises as a separated ion pair. The complexes [[(Me(3)Si)(2){Me(2)P(BH(3))}C]M(pmdeta)](n) [M = Na, n = 1 (6); M = Rb, n = 2 (7)] may be synthesised by treatment of [(Me(3)Si)(2){Me(2)P(BH(3))}C]M with pmdeta. Whereas crystallises as a discrete monomer, compound 7 crystallises as a dimer. Compounds 2, 2a-2d, 6, 7 and the corresponding caesium derivative [[(Me(3)Si)(2){Me(2)P(BH(3))}C]Cs(pmdeta)](2) () provide an opportunity to consider the influence of the ionic radius of the metal and the nature of the co-ligands on the structures of alkali metal complexes of a phosphine-borane-stabilised carbanion.
Influence of native defects on structural and electronic properties of magnesium silicide

NASA Astrophysics Data System (ADS)

Hirayama, Naomi; Iida, Tsutomu; Nishio, Keishi; Kogo, Yasuo; Takarabe, Kenji; Hamada, Noriaki

2017-05-01

The narrow-gap semiconductor magnesium silicide (Mg2Si) is a promising candidate for mid-temperature (500-800 K) thermoelectric applications. Mg2Si exhibits intrinsic n-type conductivity because of its interstitial Mg defects and is generally doped with n-type dopants; however, the synthesis of p-type Mg2Si has proven difficult. In the present study, we examined several types of defects, such as vacancies and the insertion of constituent atoms (Mg and Si) into crystals, to elucidate their stability in Mg2Si and their influence on its electronic states. A first-principles calculation has revealed that the insertion of Mg into a cell is the most stable and causes n-type conductivity in terms of formation energy. In contrast, the vacancy of Mg produces hole doping although its formation energy per conventional unit cell is approximately 0.07 eV higher than that of the insertion of Mg, at their concentration of 1.04 at. %. Furthermore, the insertion and vacancy of Si atoms generate electrons with higher formation energies compared to the Mg-related defects. As these defects alter the carrier concentration, they can compensate for intentional doping because of the added impurity atoms.
Real-time photoelectron spectroscopy study of the oxidation reaction kinetics on p-type and n-type Si (001) surfaces

NASA Astrophysics Data System (ADS)

Yu, Zhou

Silicon oxides thermally grown on Si surface are the core gate materials of metal-oxide-semiconductor field effect transistor (MOSFET). This thin oxide layer insulates the gate terminals and the transistors substrate which make MOSFET has certain advantages over those conventional junctions, such as field-effect transistor (FET) and junction field effect transistor (JFET). With an oxide insulating layer, MOSFET is able to sustain higher input impedance and the corresponding gate leakage current can be minimized. Today, though the oxidation process on Si substrate is popular in industry, there are still some uncertainties about its oxidation kinetics. On a path to clarify and modeling the oxidation kinetics, a study of initial oxidation kinetics on Si (001) surface has attracted attentions due to having a relatively low surface electron density and few adsorption channels compared with other Si surface direction. Based on previous studies, there are two oxidation models of Si (001) that extensively accepted, which are dual oxide species mode and autocatalytic reaction model. These models suggest the oxidation kinetics on Si (001) mainly relies on the metastable oxygen atom on the surface and the kinetic is temperature dependent. Professor Yuji Takakuwa's group, Surface Physics laboratory, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, observed surface strain existed during the oxidation kinetics on Si (001) and this is the first time that strain was discovered during Si oxidation. Therefore, it is necessary to explain where the strain comes from since none of previous model research included the surface strain (defects generation) into considerations. Moreover, recent developing of complementary metal-oxide-semiconductor (CMOS) requires a simultaneous oxidation process on p- and n-type Si substrate. However, none of those previous models included the dopant factor into the oxidation kinetic modeling. All of these points that further work is necessary to update and modify the traditional Si (001) oxidation models that had been accepted for several decades. To update and complement the Si (001) oxidation kinetics, an understanding of the temperature and dopant factor during initial oxidation kinetics on Si (001) is our first step. In this study, real-time photoelectron spectroscopy is applied to characterize the oxidized (001) surface and surface information was collected by ultraviolet photoelectron spectroscopy technique. By analyzing parameters such as O 2p spectra uptake, change of work function and the surface state in respect of p- and n- type Si (001) substrate under different temperature, the oxygen adsorption structure and the dopant factor can be determined. In this study, experiments with temperature gradients on p-type Si (001) were conducted and this aims to clarify the temperature dependent characteristic of Si (001) surface oxidation. A comparison of the O 2p uptake, change of work function and surface state between p-and n-type Si (001) is made under a normal temperature and these provides with the data to explain how the dopant factor impacts the oxygen adsorption structure on the surface. In the future, the study of the oxygen adsorption structure will lead to an explanation of the surface strain that discovered; therefore, fundamental of the initial oxidation on Si (001) would be updated and complemented, which would contribute to the future gate technology in MOSFET and CMOS.
Analysis of aging time dependent electrical characteristics of AuCu/n-Si/Ti Schottky type diode

NASA Astrophysics Data System (ADS)

Taser, Ahmet; Şenarslan, Elvan; Güzeldir, Betül; Saǧlam, Mustafa

2017-04-01

The purpose of this study is to fabricate AuCu/n-Si/Ti Schottky type diode and determine the effects of aging time on the diode parameters such as ideality factor, barrier height, series resistance, interface state density and rectification ratio. Gold and copper ratios in the gold-copper alloy used in making the Schottky contact were taken as equal. Schottky barrier contact using AuCu alloy and ohmic contact using Ti metal were made on n-Si by thermal evaporation. The electrical characterization of the AuCu/n-Si/Ti diode was made immediately based on the aging time at room temperature in dark conditions. The I-V measurements were also repeated 1, 7, 15, 30 and 90 days after fabrication of the diode in order to observe the effect of the aging time. The determined values of the ideality factor are in the range of 1,21 (for immediately)-1,075 (for 90 days). In the same way, values of the barrier height are also in the range of 0,566 eV (for immediately)-0,584 eV (for 90 days). From the I-V characteristics, it is seen that the diode appears to have a good rectification character.
Manipulation of charge transfer and transport in plasmonic-ferroelectric hybrids for photoelectrochemical applications

PubMed Central

Wang, Zhijie; Cao, Dawei; Wen, Liaoyong; Xu, Rui; Obergfell, Manuel; Mi, Yan; Zhan, Zhibing; Nasori, Nasori; Demsar, Jure; Lei, Yong

2016-01-01

Utilizing plasmonic nanostructures for efficient and flexible conversion of solar energy into electricity or fuel presents a new paradigm in photovoltaics and photoelectrochemistry research. In a conventional photoelectrochemical cell, consisting of a plasmonic structure in contact with a semiconductor, the type of photoelectrochemical reaction is determined by the band bending at the semiconductor/electrolyte interface. The nature of the reaction is thus hard to tune. Here instead of using a semiconductor, we employed a ferroelectric material, Pb(Zr,Ti)O3 (PZT). By depositing gold nanoparticle arrays and PZT films on ITO substrates, and studying the photocurrent as well as the femtosecond transient absorbance in different configurations, we demonstrate an effective charge transfer between the nanoparticle array and PZT. Most importantly, we show that the photocurrent can be tuned by nearly an order of magnitude when changing the ferroelectric polarization in PZT, demonstrating a versatile and tunable system for energy harvesting. PMID:26753764
A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

NASA Astrophysics Data System (ADS)

Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

2018-05-01

Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.
Electron-irradiated n+-Si as hole injection tunable anode of organic light-emitting diode

NASA Astrophysics Data System (ADS)

Li, Y. Z.; Wang, Z. L.; Wang, Y. Z.; Luo, H.; Xu, W. J.; Ran, G. Z.; Qin, G. G.

2013-01-01

Traditionally, n-type silicon is not regarded as a good anode of organic light emitting diode (OLED) due to the extremely low hole concentration in it; however, when doped with Au element which acts as carrier generation centers, it can be, as shown in our previous work. In this study, we demonstrate a new kind of carrier generation centers in n+-type silicon, which are the defects produced by 5 MeV electron irradiation. The density of carrier generation centers in the irradiated n+-Si anode can be controlled by tuning the electron irradiation time, and thus hole injection current in the OLEDs with the irradiated n+-Si anode can be optimized, leading to their much higher maximum efficiencies than those of the OLEDs with non-irradiated n+-Si anode. For a green phosphorescent OLED with the irradiated n+-Si anode, the current efficiency and power efficiency reach up to 12.1 cd/A and 4.2 lm/W, respectively.
The influence of poly(ethylene oxide) and illumination on the copper electrodeposition process onto n-Si(100).

PubMed

Muñoz, Eduardo C; Schrebler, Ricardo S; Cury, Paula K; Suarez, Claudio A; Córdova, Ricardo A; Gómez, Carlos H; Marotti, Ricardo E; Dalchiele, Enrique A

2006-10-26

In this study, we examined the influence of illumination and the presence of poly(ethylene oxide) (PEO) as an additive for the copper electrodeposition process onto n-Si(100). The study was carried out by means of cyclic voltammetry (CV) and the potential steps method, from which the corresponding nucleation and growth mechanism (NGM) were determined. Likewise, a morphologic analysis of the deposits obtained at different potential values by means of atomic force microscopy (AFM) was carried out. In a first stage, Mott-Schottky measurements so as to characterize the energetics of the semiconductor/electrolyte interface were made. Also, parallel capacity measurements were carried out in order to determine the surface state density of the substrate. It was found that when PEO concentration is increased, the number of these surface states decreases. The CV results indicated that the presence of PEO inhibits the photoelectrochemical reaction of oxide formation on the surface of the semiconductor. This allows a decrease in the overpotential associated with the electrodeposition process. The analysis of the j/t transients shows that the NGM corresponds to progressive three-dimensional (3D) diffusional controlled (PN3D(Diff)), which was confirmed by the AFM technique. Neither illumination nor the presence of PEO changes the mechanisms. Their influence is in that they diminish the size of the nuclei and the speed with which these are formed, which produces a more homogeneous electrodeposit.
A novel label-free photoelectrochemical sensor based on N,S-GQDs and CdS co-sensitized hierarchical Zn2SnO4 cube for detection of cardiac troponin I.

PubMed

Fan, Dawei; Bao, Chunzhu; Khan, Malik Saddam; Wang, Chuanlei; Zhang, Yong; Liu, Qinze; Zhang, Xian; Wei, Qin

2018-05-30

A novel label-free photoelectrochemical (PEC) sensor based on graphene quantum dots doped with nitrogen and sulfur (N,S-GQDs) and CdS co-sensitized hierarchical Zn 2 SnO 4 cube was fabricated to detect cardiac troponin I (cTnI). The unique hierarchical Zn 2 SnO 4 cube was synthesized successfully by the solvothermal method, which has a large specific surface to load functional materials. N,S-GQDs nanoparticles were assembled to the surface of cubic Zn 2 SnO 4 coated ITO electrode, which efficiently accelerated the electronic transition and improved photo-to-current conversion efficiency. Then, CdS nanoparticles further were modified by in-situ growth method to form Zn 2 SnO 4 /N,S-GQDs/CdS composite with prominent photocurrent, which was 30 times that of the Zn 2 SnO 4 cube alone. In this work, the specific immune recognition between cTnI antigens and cTnI antibodies (anti-cTnI) reduced the intensity of the photoelectric signal. And the intensity decreased linearly with the logarithm of cTnI concentration range from 0.001 ng/mL to 50 ng/mL with a detection limit of 0.3 pg/mL. With high sensitivity, excellent selectivity, good stability and reproducibility, the fabricated PEC sensor showed promising applications in the sensor, clinical diagnosis of myocardial infarction and PEC analysis. Copyright © 2018 Elsevier B.V. All rights reserved.
Porous silicon-copper phthalocyanine heterostructure based photoelectrochemical cell

NASA Astrophysics Data System (ADS)

A. Betty, C.; N, Padma; Arora, Shalav; Survaiya, Parth; Bhattacharya, Debarati; Choudhury, Sipra; Roy, Mainak

2018-01-01

A hybrid solar cell consisting of nanostructured p-type porous silicon (PS) deposited with visible light absorbing dye, Copper Phthalocyanine (CuPc) has been prepared in the photoelectrochemical cell configuration. P-type PS with (100) and (111) orientations which have different porous structures were used for studying the effects of the substrate morphology on the cell efficiency. Heterostructures were prepared by depositing three different thicknesses of CuPc for optimizing the cell efficiency. Structural and surface characterizations were studied using XRD, Raman, SEM and AFM on the PS-CuPc heterostructure. XRD spectrum on both plane silicon and porous silicon indicates the π-π stacking of CuPc with increased disorder for CuPc film on porous silicon. Electrochemical characterizations under sun light type radiation have been carried out to evaluate the photosensitivity of the heterostructure. Between the two different substrates, (100) PS gives better photocurrent, possibly due to the higher surface area and lower series resistance of the structure. Among the (100) PS substrates, (100) PS with 15 nm CuPc film gives Voc more than 1 V resulting in higher efficiency for the cell. The study suggests the scope for optimization of solar cell efficiency using various combinations of the substrate structure and thickness of the sensitizing layer.
Synthesis and characterization of AlTiSiN/CrSiN multilayer coatings by cathodic arc ion-plating

NASA Astrophysics Data System (ADS)

Yang, B.; Tian, C. X.; Wan, Q.; Yan, S. J.; Liu, H. D.; Wang, R. Y.; Li, Z. G.; Chen, Y. M.; Fu, D. J.

2014-09-01

AlTiSiN/CrSiN multilayer coatings were deposited on Si (1 0 0) and cemented carbide substrates using Cr, AlTi cathodes and SiH4 gases by cathodic arc ion plating system. The influences of SiH4 gases flowrate on the structural and mechanical properties of the coatings were investigated, systematically. AlTiSiN/CrSiN coatings exhibit a B1 NaCl-type nano-multilayered structure in which the CrSiN nano-layers alternate with AlTiSiN nano-layers with multiple orientations of crystal planes indicated by XRD patterns and TEM. Si contents of the coatings increase with increasing SiH4 flowrate. The hardness of the coatings increases to the maximum value of 3500 Hv0.05 with increasing SiH4 flowrate from 20 to 40 sccm and then decreases with further addition of SiH4 gases. A higher adhesive force of 73 N is obtained at the flowrate of 48 sccm. The coatings exhibit different tribological performance when the mating materials were varied from Si3N4 to cemented carbide balls and the variation of friction coefficients of the coatings against Si3N4 influenced by SiH4 flowrate are not obvious as against cemented carbide balls.
Optical spectra, electronic structure and aromaticity of benzannulated N-heterocyclic carbene and its analogues of the type C6H4(NR)2E: (E = Si, Ge, Sn, Pb).

PubMed

Aysin, Rinat R; Bukalov, Sergey S; Leites, Larissa A; Zabula, Alexander V

2017-07-11

A series of benzannulated N-heterocyclic compounds containing divalent 14 group atoms, C 6 H 4 (NR) 2 E II , E = C, Si, Ge, Sn, Pb, have been studied by various experimental (vibrational and UV-vis spectroscopy) and theoretical (NICS, ISE, ACID) techniques. The methods used confirm 10 π-electron delocalization (aromaticity) in these heterocycles, however, the aromaticity sequences estimated by the criteria based on different physical properties do not coincide.
Electron density distribution and disordered crystal structure of 15R-SiAlON, SiAl{sub 4}O{sub 2}N{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banno, Hiroki; Hanai, Takaaki; Asaka, Toru

2014-03-15

The crystal structure of SiAl{sub 4}O{sub 2}N{sub 4} was characterized by laboratory X-ray powder diffraction (CuKα{sub 1}). The title compound is trigonal with space group R3-bar m. The hexagonal unit-cell dimensions (Z=3) are a=0.301332(3) nm, c=4.18616(4) nm and V=0.3291825(5) nm{sup 3}. The initial structural model was successfully derived by the charge-flipping method and further refined by the Rietveld method. The final structural model showed the positional disordering of one of the three (Si,Al) sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensitymore » partitioning was minimized. The reliability indices calculated from the MPF were R{sub wp}=5.05%, S (=R{sub wp}/R{sub e})=1.21, R{sub p}=3.77%, R{sub B}=1.29% and R{sub F}=1.01%. The disordered crystal structure was successfully described by overlapping three types of domains with ordered atom arrangements. The distribution of atomic positions in one of the three types of domains can be achieved in the space group R3-bar m. The atom arrangements in the other two types of domains are noncentrosymmetrical with the space group R3m. These two structural configurations are related by the pseudo-symmetry inversion. -- Graphical abstract: A bird's eye view of electron densities up to 75.3% (0.133 nm{sup −3}) of the maximum on the plane parallel to (110) with the corresponding atomic arrangements of SiAl{sub 4}O{sub 2}N{sub 4}. Highlights: • Crystal structure of SiAl{sub 4}O{sub 2}N{sub 4} is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • The maximum-entropy method-based pattern fitting method is used to confirm the validity of the model. • The disordered structure is described by overlapping three types of domains with ordered atom arrangements.« less
Nitride Conversion: A Novel Approach to c-Si Solar Cell Metallization

NASA Astrophysics Data System (ADS)

Hook, David Henry

Metallization of commercial-grade c-Si solar cells is currently accomplished by screen-printing fine lines of a Ag/PbO-glass paste amalgam (Ag-frit) onto the insulating SiNx antireflective coating (ARC) that lies atop the shallow n-type emitter layer of the cell. Upon annealing, the glass etches SiNx and permits the crystallization of Ag near the electrically-active emitter interface, thus contacting the cell. While entirely functional, the contact interface produced by Ag-frit metallization is non-ideal, and Ag metal itself is expensive; its use adds to overall solar cell costs. The following work explores the use of Ti-containing alloys as metallization media for c-Si solar cells. There is a -176 kJ [mol N]--1 free energy change associated with the conversion of Si3N4 to TiN. By combining Ti with a low-melting point metal, this reaction can take place at temperatures as low as 750°C in the bulk. Combinations of Ti with Cu, Sn, Ag, and Pb ternary and binary systems are investigated. On unmetallized, c-Si textured solar cells it is shown that 900 nm of stoichiometric Ti6Sn 5 is capable of converting the SiNx ARC to TiN and Ti5Si3, both of which are conducting materials with electrically low-barriers to contact with n-type Si. Alongside electron microscopy, specific contact resistivity (rho c) measurements are used to determine the interfacial quality of TiN/Ti5Si3 contacts to n-Si. Circular transmission line model (CTLM) measurements are utilized for the characterization of reacted Ag0.05Cu0.69Ti0.26, Sn0.35 Ag0.27Ti0.38, and Ti6Sn5 contacts. rhoc values as low as 26 muOcm 2 are measured for reacted Ti6Sn5-SiN x on conventional c-Si solar cells. This value is approximately 2-3 orders of magnitude lower than rhoc of contacts produced by traditional Ag-frit metallization. Viable 1x1 cm, Ti6Sn5-metallized solar cells on 5x5 cm substrates were fabricated through a collaboration with the Georgia Institute of Technology (GA Tech). Front-side metallization was performed at NCSU; cells were then shipped to GA Tech for rear-side metallization, Ag-plating to increase the metal thickness, and cell isolation. This collaboration produced a 16.9% efficient, Ti6Sn5-metallized cell compared to a 17.4% efficient Ag frit-metallized control cell that had experienced an identical temperature profile. It was found that the annealing profiles associated with conversion-metallization promote H2 desorption from the SiN x ARC and thus negatively affect cell passivation. Strategies exist for decreasing the heat experienced by conversion-metallized cells, doing so would increase the overall efficiency and improve other relevant metrics. Solar industry analysis indicates that c-Si cells will increase in efficiency by switching to high sheet-resistance p-type emitters; there will be a marked need for a contact mechanism with a near-ideal, low barrier-height interfaces to these next-generation layers. SiN x ARC conversion to TiN/Ti5Si3 represents an economical means of achieving low rhoc contact to both n and p-type Si when compared to metallization by Ag frit.
Silicon based near infrared photodetector using self-assembled organic crystalline nano-pillars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ajiki, Yoshiharu, E-mail: yoshiharu-ajiki@ot.olympus.co.jp, E-mail: isao@i.u-tokyo.ac.jp; Kan, Tetsuo; Yahiro, Masayuki

We propose a silicon (Si) based near-infrared photodetector using self-assembled organic crystalline nano-pillars, which were formed on an n-type Si substrate and were covered with an Au thin-film. These structures act as antennas for near-infrared light, resulting in an enhancement of the light absorption on the Au film. Because the Schottky junction is formed between the Au/n-type Si, the electron excited by the absorbed light can be detected as photocurrent. The optical measurement revealed that the nano-pillar structures enhanced the responsivity for the near-infrared light by 89 (14.5 mA/W) and 16 (0.433 mA/W) times compared with those of the photodetector without nano-pillarsmore » at the wavelengths of 1.2 and 1.3 μm, respectively. Moreover, no polarization dependency of the responsivity was observed, and the acceptable incident angle ranged from 0° to 30°. These broad responses were likely to be due to the organic nano-pillar structures' having variation in their orientation, which is advantageous for near-infrared detector uses.« less
Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

PubMed Central

Yamasaka, Shuto; Watanabe, Kentaro; Sakane, Shunya; Takeuchi, Shotaro; Sakai, Akira; Sawano, Kentarou; Nakamura, Yoshiaki

2016-01-01

The high electrical and drastically-low thermal conductivities, a vital goal for high performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture composed of Si channel layers and epitaxial Ge nanodots (NDs) with ultrahigh areal density (~1012 cm−2). In this nanoarchitecture, the ultrasmall NDs and Si channel layers play roles of phonon scattering sources and electrical conduction channels, respectively. Electron conductivity in n-type nanoacrhitecture shows high values comparable to those of epitaxial Si films despite the existence of epitaxial NDs. This is because Ge NDs mainly scattered not electrons but phonons selectively, which could be attributed to the small conduction band offset at the epitaxially-grown Si/Ge interface and high transmission probability through stacking faults. These results demonstrate an independent control of thermal and electrical conduction for phonon-glass electron-crystal TE materials by nanostructure designing and the energetic and structural interface control. PMID:26973092
Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaman, V. I.; Balyuba, V. I.; Gritsyk, V. Yu.

2008-03-15

Experimental data on the dependence of the flat-band voltage and relaxation time for the capacitance of the space-charge region in an MOS diode (Pd-SiO{sub 2}-n-Si) on the hydrogen concentration in a hydrogen/air gaseous mixture are discussed. It is assumed that variation in the flat-band voltage U{sub fb} in an MOS structure with the thickness d = 369 nm subjected to a hydrogen/air gaseous mixture can be accounted for by the formation of dipoles in the Pd-SiO{sub 2} gap due to polarization of hydrogen atoms (H{sub a}). An analytical expression describing the dependence of variation in the flat-band voltage {Delta}U{sub fb}more » on the hydrogen concentration n{sub H{sub 2}} was derived. In MOS structures with d {<=} 4 nm (or MOS diodes), the value of {Delta}U{sub fb} is mainly controlled by passivation of the centers responsible for the presence of the surface acceptor-type centers at the SiO{sub 2}-n-Si interface by hydrogen atoms. Analytical expressions describing the dependences of {Delta}U{sub fb} and the capacitance relaxation time in the space-charge region on n{sub H{sub 2}} are derived. The values of the density of adsorption centers and the adsorption heat for hydrogen atoms at the Pd-SiO{sub 2} and SiO{sub 2}-n-Si interfaces are found.« less
Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaman, V. I.; Balyuba, V. I.; Gritsyk, V. Yu.

2008-03-15

Experimental data on the dependence of the flat-band voltage and relaxation time for the capacitance of the space-charge region in an MOS diode (Pd-SiO{sub 2}-n-Si) on the hydrogen concentration in a hydrogen/air gaseous mixture are discussed. It is assumed that variation in the flat-band voltage U{sub fb} in an MOS structure with the thickness d = 369 nm subjected to a hydrogen/air gaseous mixture can be accounted for by the formation of dipoles in the Pd-SiO{sub 2} gap due to polarization of hydrogen atoms (H{sub a}). An analytical expression describing the dependence of variation in the flat-band voltage {delta}U{sub fb}more » on the hydrogen concentration n{sub H2} was derived. In MOS structures with d {<=} 4 nm (or MOS diodes), the value of {delta}U{sub fb} is mainly controlled by passivation of the centers responsible for the presence of the surface acceptor-type centers at the SiO{sub 2}-n-Si interface by hydrogen atoms. Analytical expressions describing the dependences of {delta}U{sub fb} and the capacitance relaxation time in the space-charge region on n{sub H2} are derived. The values of the density of adsorption centers and the adsorption heat for hydrogen atoms at the Pd-SiO{sub 2} and SiO{sub 2}-n-Si interfaces are found.« less
Si /SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning

NASA Astrophysics Data System (ADS)

Suet, Z.; Paul, D. J.; Zhang, J.; Turner, S. G.

2007-05-01

In situ hydrogen cleaning to reduce the surface segregation of n-type dopants in SiGe epitaxy has been used to fabricate Si /SiGe resonant tunneling diodes in a joint gas source chemical vapor deposition and molecular beam epitaxial system. Diodes fabricated without the in situ clean demonstrate linear current-voltage characteristics, while a 15min hydrogen clean produces negative differential resistance with peak-to-valley current ratios up to 2.2 and peak current densities of 5.0A/cm2 at 30K. Analysis of the valley current and the band structure of the devices suggest methods for increasing the operating temperature of Si /SiGe resonant tunneling diodes as required for applications.

Formation of thin film like assembly of exfoliated C3N4 nanoflakes by solvent non-evaporative method using centrifuge

NASA Astrophysics Data System (ADS)

Tejasvi, Ravi; Basu, Suddhasatwa

2017-12-01

A simple method for depositing a thin film of nanomaterial on a substrate using centrifugation technique has been developed, whereby solvent evaporation is prevented and solvent reuse is possible. The centrifuge technique of deposition yields uniform, smooth thin film irrespective of substrate surface texture. The deposited TiO2/eC3N4 film studied, through field emission scanning electron microscope, atomic force microscope, and optical surface profilometer, shows variation in surface roughness on the basis of centrifugation speeds. Initially film coverage improves and surface roughness decreases with the increase in rpm of the centrifuge and the surface roughness slightly increases with further increase in rpm. The photoelectrochemical studies of TiO2/eC3N4 films suggest that the centrifuge technique forms better heterojunctions compared to that by spin coating technique leading to enhanced photoelectrochemical water splitting.
Nanoporous Silicon Carbide for Nanoelectromechanical Systems Applications

NASA Technical Reports Server (NTRS)

Hossain, T.; Khan, F.; Adesida, I.; Bohn, P.; Rittenhouse, T.; Lienhard, Michael (Technical Monitor)

2003-01-01

A major goal of this project is to produce porous silicon carbide (PSiC) via an electroless process for eventual utilization in nanoscale sensing platforms. Results in the literature have shown a variety of porous morphologies in SiC produced in anodic cells. Therefore, predictability and reproducibility of porous structures are initial concerns. This work has concentrated on producing morphologies of known porosity, with particular attention paid toward producing the extremely high surface areas required for a porous flow sensor. We have conducted a parametric study of electroless etching conditions and characteristics of the resulting physical nanostructure and also investigated the relationship between morphology and materials properties. Further, we have investigated bulk etching of SiC using both photo-electrochemical etching and inductively-coupled-plasma reactive ion etching techniques.
Photogenerated Hole-Induced Chemical Redox Cycling on Bi2S3/Bi2Sn2O7 Heterojunction: Toward General Amplified Split-Type Photoelectrochemical Immunoassay.

PubMed

Cao, Jun-Tao; Wang, Bing; Dong, Yu-Xiang; Wang, Qian; Ren, Shu-Wei; Liu, Yan-Ming; Zhao, Wei-Wei

2018-06-04

This work reports the elegant bridging of enzymatic generation of electron donor with photogenerated hole-induced chemical redox cycling amplification (RCA) for innovative photoelectrochemical (PEC) immunoassay, by the aid of a heterojunction photoelectrode with split-type strategy. Specifically, the system was exemplified by the alkaline phosphatase (ALP) catalytic generation of ascorbic acid (AA), the redox cycling of AA by tris (2-carboxyethyl) phosphine (TCEP) as reductant, and the use of a novel Bi 2 S 3 /Bi 2 Sn 2 O 7 heterojunction and myoglobin (Myo) as the photoelectrode and the target, respectively. After the immunoreaction and ALP-induced production of AA, the subsequent oxidation of AA by the photogenerated holes of the Bi 2 S 3 /Bi 2 Sn 2 O 7 heterojunction could be cycled via the regeneration of AA by TCEP from the oxidized product of dehydroascorbic acid, leading to easy signal amplification for the sensitive immunoassay of Myo in real samples. It is believed that this work provided a basis for further design and development of general RCA-based PEC immunoassays.
"Signal-on" photoelectrochemical biosensor for sensitive detection of human T-Cell lymphotropic virus type II DNA: dual signal amplification strategy integrating enzymatic amplification with terminal deoxynucleotidyl transferase-mediated extension.

PubMed

Shen, Qingming; Han, Li; Fan, Gaochao; Zhang, Jian-Rong; Jiang, Liping; Zhu, Jun-Jie

2015-01-01

A novel "signal-on" photoelectrochemical (PEC) biosensor for sensitive detection of human T-cell lymphotropic virus type II (HTLV-II) DNA was developed on the basis of enzymatic amplification coupled with terminal deoxynucleotidyl transferase (TdT)-mediated extension strategy. The intensity of the photocurrent signal was proportional to the concentration of the HTLV-II DNA-target DNA (tDNA) by dual signal amplification. In this protocol, GR-CdS:Mn/ZnS nanocomposites were used as photoelectric conversion material, while pDNA was used as the tDNA recognizing unit. Moreover, the TdT-mediated extension and the enzymatic signal amplification technique were used to enhance the sensitivity of detection. Using this novel dual signal amplification strategy, the prototype of PEC DNA sensor can detect as low as ∼0.033 fM of HTLV-II DNA with a linear range of 0.1-5000 fM, with excellent differentiation ability even for single-base mismatches. This PEC DNA assay opens a promising platform to detect various DNA targets at ultralow levels for early diagnoses of different diseases.
A comparative study of three-terminal Hanle signals in CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jeong-Hyeon; Cho, B. K., E-mail: chobk@gist.ac.kr; Grünberg Center for Magnetic Nanomaterials, Gwangju Institute of Science and Technology

We performed three-terminal (3T) Hanle measurement for two types of sample series, CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si, with various tunnel resistances. Clear Hanle signal and anomalous scaling between spin resistance-area product and tunnel resistance-area product were observed in CoFe/SiO{sub 2}/n{sup +}-Si devices. In order to explore the origin of the Hanle signal and the impurity-assisted tunneling effect on the Hanle signal in our devices, Hanle measurement in Cu/SiO{sub 2}/n{sup +}-Si devices was performed as well. However, no detectable Hanle signal was observed in Cu/SiO{sub 2}/n{sup +}-Si, even though a lot of samples with various tunnel resistances were studiedmore » in wide temperature and bias voltage ranges. Through a comparative study, it is found that the impurity-assisted tunneling magnetoresistance mechanism would not play a dominant role in the 3T Hanle signal in CoFe/SiO{sub 2}/n{sup +}-Si tunnel junctions, where the SiO{sub 2} was formed by plasma oxidation to minimize impurities.« less
Fabrication of Multilayer-Type Mn-Si Thermoelectric Device

NASA Astrophysics Data System (ADS)

Kajitani, T.; Ueno, T.; Miyazaki, Y.; Hayashi, K.; Fujiwara, T.; Ihara, R.; Nakamura, T.; Takakura, M.

2014-06-01

This research aims to develop a direct-contact manganese silicon p/ n multilayer-type thermoelectric power generation block. p-type MnSi1.74 and n-type Mn0.7Fe0.3Si1.68 ball-milled powders with diameter of about 10 μm or less were mixed with polyvinyl butyl alcohol diluted with methylbenzene at pigment volume concentration of approximately 70%. The doctor-blade method produced 45- μm-thick p- and n-type pigment plates. The insulator, i.e., powdered glass, was mixed with cellulose to form insulator slurry. Lamination of manganese silicide pigment layers and screen-printed insulator layers was carried out to fabricate multilayer direct-contact thermoelectric devices. Hot pressing and spark plasma sintering were carried out at 450°C and 900°C, respectively. Four to 30 thermoelectric (TE) p/ n pairs were fabricated in a 10 mm × 10 mm × 10 mm sintered TE block. The maximum output was 11.7 mW/cm2 at a temperature difference between 20°C and 700°C, which was about 1/85 of the ideal power generation estimated from the thermoelectric data of the bulk MnSi1.74 and Mn0.7Fe0.3Si1.68 materials. A power generation test using an engine test bench was also carried out.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In 2O 3 and/or Ga 2O 3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.
CdS/CdSe quantum dot shell decorated vertical ZnO nanowire arrays by spin-coating-based SILAR for photoelectrochemical cells and quantum-dot-sensitized solar cells.

PubMed

Zhang, Ran; Luo, Qiu-Ping; Chen, Hong-Yan; Yu, Xiao-Yun; Kuang, Dai-Bin; Su, Cheng-Yong

2012-04-23

A CdS/CdSe composite shell is assembled onto the surface of ZnO nanowire arrays with a simple spin-coating-based successive ionic layer adsorption and reaction method. The as-prepared photoelectrode exhibit a high photocurrent density in photoelectrochemical cells and also generates good power conversion efficiency in quantum-dot-sensitized solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Materials Design of the Codoping for the Fabrication of Low-Resistivity p-Type ZnSe and GaN by ab-initio Electronic Structure Calculation

NASA Astrophysics Data System (ADS)

Katayama-Yoshida, H.; Yamamoto, T.

1997-08-01

We propose an effective doping method, the codoping (doping with n- and p-type dopants at the same time) method, for the fabrication of low-resistivity p-type ZnSe and GaN with wide-band-gap based upon ab-initio electronic band structure calculations. p-type doping eminently leads to an increase in the electrostatic energy, called the Madelung energy, which shifts the Se 4p levels for p-type doped ZnSe and the N 2p levels for p-type doped GaN materials towards higher energy regions. This leads to a destabilization of ionic charge distributions in p-type ZnSe and p-type GaN crystals, resulting in the self-compensation of anion intrinsic defects. For ZnSe crystals, we propose the codoping of n-type In donors at Zn sites and p-type N acceptors at Se sites based on the calculation. In addition, we propose the codoping of n-type Si-donors at Ga sites (n-type O donors at N sites) and p-type Be- or Mg acceptors at Ga sites. The codoping decreases the Madelung energy and leads to an increase in the net acceptor carrier density.
Structural and electrical properties of Si- and Ti-doped Cu{sub 2}SnSe{sub 3} bulks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wubet, Walelign; Kuo, Dong-Hau, E-mail: dhkuo@mail.ntust.edu.tw

2015-07-15

Silicon-doped (Cu{sub 2}(Sn{sub 1−x}Si{sub x})Se{sub 3} and titanium-doped (Cu{sub 2}(Sn{sub 1−x}Ti{sub x})Se{sub 3} at x=0, 0.05, 0.1, 0.15, and 0.2 were prepared at 550 °C for 2 h with soluble sintering aids of volatile Sb{sub 2}S{sub 3} and Te. Defect chemistry was studied by measuring structural and electrical properties of Si-doped and Ti-doped Cu{sub 2}SnSe{sub 3} (CTSe) as a function of dopant concentration. Si-doped CTSe pellets show p-type at x=0 and 0.05 and n-type at x=0.1, 0.15, and 0.2, whereas Ti-doped CTSe pellets show p-type at x=0, 0.05 and 0.1 and n-type at x=0.15 and 0.2. The lowest hole concentrationmore » of 3.6×10{sup 17} cm{sup −3} and the highest mobility of 1525 cm{sup 2} V{sup −1} s{sup −1} were obtained for the Si-doped (Cu{sub 2}(Sn{sub 1−x}Si{sub x})Se{sub 3} bulks at x=0.1 (10% Si), while they were 3.1×10{sup 17} cm{sup −3} and 813 cm{sup 2} V{sup −1} s{sup −1} for the Ti-doped CTSe bulks at x=0.15 (15% Ti), as compared to 1.1×10{sup 18} cm{sup −3} and 209 cm{sup 2} V{sup −1} s{sup −1} for undoped one. The explanations based upon antisite defects of Si-to-Sn, Ti-to-Sn, Cu-to-Sn, and Sn-to-Cu for the changes in electrical property were declared. The study in bulk Si-doped and Ti-doped CTSe is based upon defect state and is consistent and supported by the data of electrical property and lattice parameter. - Graphical abstract: Cu{sub 2}SnSe{sub 3} (CTSe) semiconductor is interesting because of its adjustable electrical properties by extrinsic doping. Si and Ti doping in CTSe leads to high carrier mobility above 800 cm{sup 2} V{sup −1} s{sup −1}. - Highlights: • Cu{sub 2}SnSe{sub 3} (CTSe) is an interesting semiconductor because of its adjustable electrical properties. • Cu(In,Ga)Se{sub 2}, on the contrary, is difficult to change its electrical properties. • Si and Ti doping can change p-CTSe to n-CTSe. • The lowest electron concentration in doped CTSe had the highest mobility above 800 cm{sup 2} V{sup −1} s{sup −1}. • The defects of Si-to-Sn, Ti-to-Sn, Cu-to-Sn, and Sn-to-Cu in Si- and Ti-doped CTSe were proposed.« less
Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.

PubMed

Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah A; Shakfa, Mohammad Khaled; Ng, Tien Khee; Ooi, Boon S

2018-06-13

p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott-Schottky experiments measured a hole concentration of 1.3 × 1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.
Doping enhanced barrier lowering in graphene-silicon junctions

NASA Astrophysics Data System (ADS)

Zhang, Xintong; Zhang, Lining; Chan, Mansun

2016-06-01

Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.
Low Temperature Ohmic Contact Formation of Ni2Si on N-type 4H-SiC and 6H-SiC

NASA Technical Reports Server (NTRS)

Elsamadicy, A. M.; Ila, D.; Zimmerman, R.; Muntele, C.; Evelyn, L.; Muntele, I.; Poker, D. B.; Hensley, D.; Hirvonen, J. K.; Demaree, J. D.;

2001-01-01

Nickel Silicide (Ni2Si) is investigated as possible ohmic contact to heavily nitrogen-doped N-type 4H-SiC and 6H-SiC. Nickel Silicide was deposited via electron gun with various thicknesses on both Si and C faces of the SiC substrates. The Ni2Si contacts were formed at room temperature as well as at elevated temperatures (400 to 1000 K). Contact resistivities and I-V characteristics were measured at temperatures between 100 and 700 C. To investigate the electric properties, I-V characteristics were studied and the Transmission Line Method (TLM) was used to determine the specific contact resistance for the samples at each annealing temperature. Both Rutherford Backscattering Spectroscopy (RBS) and Auger Electron Spectroscopy (AES) were used for depth profiling of the Ni2Si, Si, and C. X-ray Photoemission Spectroscopy (XPS) was used to study the chemical structure of the Ni2Si/SiC interface.

Specific anion effects on copper surface through electrochemical treatment: Enhanced photoelectrochemical CO2 reduction activity of derived nanostructures induced by chaotropic anions

NASA Astrophysics Data System (ADS)

Navaee, Aso; Salimi, Abdollah

2018-05-01

Copper derivatives are the most prominent CO2 reduction electrocatalyst. Herein, the metallic copper has been electrochemically treated with some of common ionic salts such as N3bar, HPO2bar, S2bar, Fbar, Clbar, Brbar and Ibar based on the dissolution of a metallic working electrode in an aqueous solution to derive the surface roughness incorporated with nanostructures. Diverse surface morphology can be obtained when the ionic radii of anions are changed. Surface study reveals various roughness shapes based on the size and polarity of the anions, where the ions with higher ionic radii have higher impact on the Cu surface. In comparison, polyatomic oxyanion such as HPO2bar even with large ionic radii do not have enough strength to create the surface roughness than that of oxygen-free anions with large ionic radii. The photoelectrochemical behavior of the modified surfaces toward CO2 reduction is studied at a wide potential window in bicarbonate aqueous solution. Based on our investigations, treated surfaces by Ibar, Clbar and S2bargive a more surface roughness, while Ibar and N3bar offer higher catalytic activity toward CO2 reduction due to possible complexing ability of these anions with Cu cations, followed by formation of the co-catalyst semiconductor and facilitate electron transfer. This methodology can be applied to investigate the effect of ions on transition metals along with obtaining different surface morphologies tailored to different applications.
Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Nopparuchikun, Adison; Promros, Nathaporn; Sittimart, Phongsaphak; Onsee, Peeradon; Duangrawa, Asanlaya; Teakchaicum, Sakmongkon; Nogami, Tomohiro; Yoshitake, Tsuyoshi

2017-09-01

By utilizing pulsed laser deposition (PLD), heterojunctions comprised of n-type nanocrystalline (NC) FeSi2 thin films and p-type Si substrates were fabricated at room temperature in this study. Both dark and illuminated current density-voltage (J-V) curves for the heterojunctions were measured and analyzed at room temperature. The heterojunctions demonstrated a large reverse leakage current as well as a weak near-infrared light response. Based on the analysis of the dark forward J-V curves, at the V value ⩽ 0.2 V, we show that a carrier recombination process was governed at the heterojunction interface. When the V value was > 0.2 V, the probable mechanism of carrier transportation was a space-charge limited-current process. Both the measurement and analysis for capacitance-voltage-frequency (C-V-f ) and conductance-voltage-frequency (G-V-f ) curves were performed in the applied frequency (f ) range of 50 kHz-2 MHz at room temperature. From the C-V-f and G-V-f curves, the density of interface states (N ss) for the heterojunctions was computed by using the Hill-Coleman method. The N ss values were 9.19 × 1012 eV-1 cm-2 at 2 MHz and 3.15 × 1014 eV-1 cm-2 at 50 kHz, which proved the existence of interface states at the heterojunction interface. These interface states are the probable cause of the degraded electrical performance in the heterojunctions. Invited talk at 5th Thailand International Nanotechnology Conference (Nano Thailand-2016), 27-29 November 2016, Nakhon Ratchasima, Thailand.
Integrating a dual-silicon photoelectrochemical cell into a redox flow battery for unassisted photocharging

PubMed Central

Liao, Shichao; Zong, Xu; Seger, Brian; Pedersen, Thomas; Yao, Tingting; Ding, Chunmei; Shi, Jingying; Chen, Jian; Li, Can

2016-01-01

Solar rechargeable flow cells (SRFCs) provide an attractive approach for in situ capture and storage of intermittent solar energy via photoelectrochemical regeneration of discharged redox species for electricity generation. However, overall SFRC performance is restricted by inefficient photoelectrochemical reactions. Here we report an efficient SRFC based on a dual-silicon photoelectrochemical cell and a quinone/bromine redox flow battery for in situ solar energy conversion and storage. Using narrow bandgap silicon for efficient photon collection and fast redox couples for rapid interface charge injection, our device shows an optimal solar-to-chemical conversion efficiency of ∼5.9% and an overall photon–chemical–electricity energy conversion efficiency of ∼3.2%, which, to our knowledge, outperforms previously reported SRFCs. The proposed SRFC can be self-photocharged to 0.8 V and delivers a discharge capacity of 730 mAh l−1. Our work may guide future designs for highly efficient solar rechargeable devices. PMID:27142885
Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tóvári, E.; Csontos, M., E-mail: csontos@dept.phy.bme.hu; Kriváchy, T.

2014-09-22

The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.
Hydrogen passivation of poly-Si/SiO x contacts for Si solar cells using Al 2O 3 studied with deuterium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William

Here, the interplay between hydrogenation and passivation of poly-Si/SiO x contacts to n-type Si wafers is studied using atomic layer deposited Al 2O 3 and anneals in forming gas and nitrogen. The poly-Si/SiO x stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiO x contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al 2O 3 is derived from its role as amore » hydrogen source for chemically passivating defects at SiO x; Al 2O 3 layers are found to hydrogenate poly-Si/SiO x much better than a forming gas anneal. By labelling Al 2O 3 and the subsequent anneal with different hydrogen isotopes, it is found that Al 2O 3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.« less
Hydrogen passivation of poly-Si/SiOx contacts for Si solar cells using Al2O3 studied with deuterium

NASA Astrophysics Data System (ADS)

Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William; Macco, Bart; Stradins, Paul; Kessels, W. M. M.; Young, David L.

2018-05-01

The interplay between hydrogenation and passivation of poly-Si/SiOx contacts to n-type Si wafers is studied using atomic layer deposited Al2O3 and anneals in forming gas and nitrogen. The poly-Si/SiOx stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiOx contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al2O3 is derived from its role as a hydrogen source for chemically passivating defects at SiOx; Al2O3 layers are found to hydrogenate poly-Si/SiOx much better than a forming gas anneal. By labelling Al2O3 and the subsequent anneal with different hydrogen isotopes, it is found that Al2O3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.
Hydrogen passivation of poly-Si/SiO x contacts for Si solar cells using Al 2O 3 studied with deuterium

DOE PAGES

Schnabel, Manuel; van de Loo, Bas W. H.; Nemeth, William; ...

2018-05-14

Here, the interplay between hydrogenation and passivation of poly-Si/SiO x contacts to n-type Si wafers is studied using atomic layer deposited Al 2O 3 and anneals in forming gas and nitrogen. The poly-Si/SiO x stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiO x contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al 2O 3 is derived from its role as amore » hydrogen source for chemically passivating defects at SiO x; Al 2O 3 layers are found to hydrogenate poly-Si/SiO x much better than a forming gas anneal. By labelling Al 2O 3 and the subsequent anneal with different hydrogen isotopes, it is found that Al 2O 3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.« less

Electronic Structure of p- and n-Type Doping Impurities in Cubic Gallium Nitride

NASA Astrophysics Data System (ADS)

Pentaleri, E. A.; Gubanov, V. A.; Fong, C. Y.; Klein, B. M.

1996-03-01

LMTO-TB calculations were performed to investigate the electronic structure of C, Be, Mg, Si, Zn, and Cd substitutional impurities in cubic GaN (c-GaN). The calculations used 128-site supercells consisting of 64-atoms. Empty spheres of two types occupied the remaining sites. Semi-core Ga 3d states were treated explicitly as valence states. Both amphoteric substitutions were considered for C and Si impurities, while only cation-site substitutions were considered for Be, Mg, Zn, and Cd. All metal impurities formed partially occupied impurity states at the VB edge, which may result in p-type conductivity. C and Si impurities substituted at anion sites form sharp resonances in the gap, and are inactive in creating either p- or n-type carriers. Likewise, cation-site C substitutions introduce to the middle of the band gap strongly localized states that are inactive in carrier formation. Cation-site Si substitutions form an impurity sub-band at the CB edge, leading to n-type conductivity. The DOS at the Fermi level for each impurity-doped c-GaN crystal is used to estimate the most effective p-type doping impurities. The wave-function composition, space, and energy localization is analyzed for different impurities via projections onto the orbital basis and atomic coordinational spheres, and by examining calculated charge-density distributions.
Ternary rare earth sulfide CaCe2S4: Synthesis and characterization of stability, structure, and photoelectrochemical properties in aqueous media

NASA Astrophysics Data System (ADS)

Sotelo, Paola; Orr, Melissa; Galante, Miguel Tayar; Hossain, Mohammad Kabir; Firouzan, Farinaz; Vali, Abbas; Li, Jun; Subramanian, Mas; Longo, Claudia; Rajeshwar, Krishnan; Macaluso, Robin T.

2018-06-01

A red-orange rare earth ternary chalcogenide, CaCe2S4, was prepared in powder form by solid-state synthesis. The structural details of this compound were determined by powder X-ray diffraction. The optical band gap of CaCe2S4 was determined by diffuse reflectance spectroscopy (DRS) to be 2.1 eV, consistent with the observed red-orange color. Quantitative colorimetry measurements also support the observed color and band gap of CaCe2S4. Both direct and indirect optical transitions were gleaned from Tauc analyses of the DRS data. Photoelectrochemistry experiments on CaCe2S4 films showed n-type semiconductor behavior. Analyses of these data via the Butler-Gärtner model afforded a flat-band potential of - 0.33 V (vs. Ag/AgCl/KCl 4 M) in pH 9 aqueous sulfite electrolyte. The potential and limitations of this material for solar water splitting and photocatalytic environmental remediation (e.g., dye photodegradation) are finally presented against the backdrop of its photoelectrochemical stability and surface hole transfer kinetics in aqueous electrolytes.
Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)

NASA Astrophysics Data System (ADS)

Edmonds, Mary; Sardashti, Kasra; Wolf, Steven; Chagarov, Evgueni; Clemons, Max; Kent, Tyler; Park, Jun Hong; Tang, Kechao; McIntyre, Paul C.; Yoshida, Naomi; Dong, Lin; Holmes, Russell; Alvarez, Daniel; Kummel, Andrew C.

2017-02-01

Atomic layer deposition of a silicon rich SiNx layer on Si0.7Ge0.3(001), Si0.5Ge0.5(001), and Si0.5Ge0.5(110) surfaces has been achieved by sequential pulsing of Si2Cl6 and N2H4 precursors at a substrate temperature of 285 °C. XPS spectra show a higher binding energy shoulder peak on Si 2p indicative of SiOxNyClz bonding while Ge 2p and Ge 3d peaks show only a small amount of higher binding energy components consistent with only interfacial bonds, indicating the growth of SiOxNy on the SiGe surface with negligible subsurface reactions. Scanning tunneling spectroscopy measurements confirm that the SiNx interfacial layer forms an electrically passive surface on p-type Si0.70Ge0.30(001), Si0.50Ge0.50(110), and Si0.50Ge0.50(001) substrates as the surface Fermi level is unpinned and the electronic structure is free of states in the band gap. DFT calculations show that a Si rich a-SiO0.4N0,4 interlayer can produce lower interfacial defect density than stoichiometric a-SiO0.8N0.8, substoichiometric a-Si3N2, or stoichiometric a-Si3N4 interlayers by minimizing strain and bond breaking in the SiGe by the interlayer. Metal-oxide-semiconductor capacitors devices were fabricated on p-type Si0.7Ge0.3(001) and Si0.5Ge0.5(001) substrates with and without the insertion of an ALD SiOxNy interfacial layer, and the SiOxNy layer resulted in a decrease in interface state density near midgap with a comparable Cmax value.
Highly conducting and wide band gap phosphorous doped nc-Si–QD/a-SiC films as n-type window layers for solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kar, Debjit; Das, Debajyoti, E-mail: erdd@iacs.res.in

2016-05-23

Nano-crystalline silicon quantum dots (Si-QDs) embedded in the phosphorous doped amorphous silicon carbide (a-SiC) matrix has been successfully prepared at a low temperature (300 °C) by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) system from (SiH{sub 4} + CH{sub 4})-plasma with PH{sub 3} as the doping gas. The effect of PH{sub 3} flow rate on structural, optical and electrical properties of the films has been studied. Phosphorous doped nc-Si–QD/a-SiC films with high optical band gap (>1.9 eV) and superior conductivity (~10{sup −2} S cm{sup −1}) are obtained, which could be appropriately used as n-type window layers for nc-Si solarmore » cells in n-i-p configuration.« less
Clusterization Effects in III-V Nitrides: Nitrogen Vacancies, and Si and Mg Impurities in Aluminum Nitride and Gallium Nitride

NASA Astrophysics Data System (ADS)

Gubanov, V. A.; Pentaleri, E. A.; Boekema, C.; Fong, C. Y.; Klein, B. M.

1997-03-01

We have investigated clusterization of nitrogen vacancies and Si and Mg doping impurities in zinc-blende aluminum nitride (c-AlN) and gallium nitride (c-GaN) by the tight-binding LMTO technique. The calculations used 128-site supercells. Si and Mg atoms replacing ions in both the cation and anion sublattices of the host lattices of the host crystals have been considered. The Mg impurity at cation sites is found to form partially occupied states at the valence-band edge, and may result in p-type conductivity. When Si substitutes for Ga, the impurity band is formed at the conduction-band edge, resulting in n-type conductivity. Si impurities at cation sites, and Mg impurity at anion sites are able to form resonance states in the gap. The influence of impurity clusterization in the host lattice and interstitial sites on electronic properties of c-AlN and c-GaN crystals are modeled. The changes in vacancy- and impurity-state energies, bonding type, localization, density of states at the Fermi level in different host lattices, their dependence on impurity/vacancy concentration are analyzed and compared with the experimental data.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, David L.; Lee, Benjamin G.; Fogel, Derek

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2O 3, the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2. These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2. This lack of Ga pileup may imply fewer dopant-related defectsmore » in the SiO 2, compared with B dopants, and account for the excellent passivation.« less
Effect of tetravalent dopants on hematite nanostructure for enhanced photoelectrochemical water splitting

NASA Astrophysics Data System (ADS)

Subramanian, Arunprabaharan; Gracia-Espino, Eduardo; Annamalai, Alagappan; Lee, Hyun Hwi; Lee, Su Yong; Choi, Sun Hee; Jang, Jum Suk

2018-01-01

In this paper, the influence of tetravalent dopants such as Si4+, Sn4+, Ti4+, and Zr4+ on the hematite (α-Fe2O3) nanostructure for enhanced photoelectrochemical (PEC) water splitting are reported. The tetravalent doping was performed on hydrothermally grown akaganeite (β-FeOOH) nanorods on FTO (fluorine-doped tin-oxide) substrates via a simple dipping method for which the respective metal-precursor solution was used, followed by a high-temperature (800° C) sintering in a box furnace. The photocurrent density for the pristine (hematite) photoanode is ∼0.81 mA/cm2 at 1.23 VRHE, with an onset potential of 0.72 VRHE; however, the tetravalent dopants on the hematite nanostructures alter the properties of the pristine photoanode. The Si4+-doped hematite photoanode showed a slight photocurrent increment without a changing of the onset potential of the pristine photoanode. The Sn4+- and Ti4+-doped hematite photoanodes, however, showed an anodic shift of the onset potential with the photocurrent increment at a higher applied potential. Interestingly, the Zr4+-doped hematite photoanode exhibited an onset potential that is similar to those of the pristine and Si4+-doped hematite, but a larger photocurrent density that is similar to those of the Sn4+- and Ti4+-doped photoanodes was recorded. The photoactivity of the doped photoanodes at 1.23 VRHE follows the order Zr > Sn > Ti > Si. The onset-potential shifts of the doped photoanodes were investigated using the Ab initio calculations that are well correlated with the experimental data. X-ray diffraction (XRD) and scanning-electron microscopy (FESEM) revealed that both the crystalline phase of the hematite and the nanorod morphology were preserved after the doping procedure. X-ray photoelectron spectroscopy (XPS) confirmed the presence of the tetravalent dopants on the hematite nanostructure. The charge-transfer resistance at the various interfaces of the doped photoanodes was studied using impedance spectroscopy. The doping on the hematite photoanodes was confirmed using the Mott-Schottky (MS) analysis.
Electronic properties and morphology of copper oxide/n-type silicon heterostructures

NASA Astrophysics Data System (ADS)

Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

2017-08-01

Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.
Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2016-06-09

We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.
Amorphous and crystalline silicon based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Schüttauf, J. A.

2011-10-01

In this thesis, research on amorphous and crystalline silicon heterojunction (SHJ) solar cells is described. Probably the most important feature of SHJ solar cells is a thin intrinsic amorphous silicion (a-Si:H) layer that is deposited before depositing the doped emitter and back surface field. The passivation properties of such intrinsic layers made by three different chemical vapor deposition (CVD) techniques have been investigated. For layers deposited at 130°C, all techniques show a strong reduction in surface recombination velocity (SRV) after annealing. Modelling indicates that dangling bond saturation by atomic hydrogen is the predominant mechanism. We obtain outstanding carrier lifetimes of 10.3 ms, corresponding to SRVs of 0.56 cm/s. For a-Si:H films made at 250°C, an as-deposited minority carrier lifetime of 2.0 ms is observed. In contrast to a-Si:H films fabricated at 130°C, however, no change in passivation quality upon thermal annealing is observed. These films were fabricated for the first time using a continuous in-line HWCVD mode. Wafer cleaning before a-Si:H deposition is a crucial step for c-Si surface passivation. We tested the influence of an atomic hydrogen treatment before a-Si:H deposition on the c-Si surface. The treatments were performed in a new virgin chamber to exclude Si deposition from the chamber walls. Subsequently, we deposited a-Si:H layers onto the c-Si wafers and measured the lifetime for different H treatment times. We found that increasing hydrogen treatment times led to lower effective lifetimes. Modelling of the measured minority carrier lifetime data shows that the decreased passivation quality is caused by an increased defect density at the amorphous-crystalline interface. Furtheremore, the passivation of different a-Si:H containing layers have been tested. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation up to 255°C and 270°C is observed. This improvement is attributed to dangling bond saturation by H, whereas the decrease at higher temperatures is caused by H effusion. For intrinsic/n-type a-Si:H layer stacks, a record minority carrier lifetime of 13.3 ms is obtained. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed over the whole temperature range, due to the asymmetric Fermi-level dependent defect formation enthalpy in n- and p-type a-Si:H. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is observed that the intrinsic/p-layer stack is limiting device performance. Based on these findings, the solar cells were prepared in a modified order, reaching an efficiency of 16.7% (VOC = 681 mV), versus 15.8% (VOC = 659 mV) in the ‘standard’ order. Finally, transparent conductive oxide (TCO) layers are studied for application into solar cells. It is observed that both types of TCO deposition have no significant influence on the passivation properties of standard a-Si:H layer stacks forming the emitter structure in the used SHJ cells. On flat wafers, a conversion efficiency of 16.7% has been obtained when ITO is used as TCO, versus an efficiency of 16.3% for ZnO:Al; slightly lower due to increased electrical losses.
Silicon nanowire array architecture for heterojunction electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovan, M. M., E-mail: m.solovan@chnu.edu.ua; Brus, V. V.; Mostovyi, A. I.

2017-04-15

Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V{sub oc} = 0.8 V, short-circuit current I{sub sc} = 3.72 mA/cm{sup 2} and fill factor FF = 0.5 under illumination of 100 mW/cm{sup 2}.
Ultrathin MoS2-coated Ag@Si nanosphere arrays as an efficient and stable photocathode for solar-driven hydrogen production

NASA Astrophysics Data System (ADS)

Zhou, Qingwei; Su, Shaoqiang; Hu, Die; Lin, Lin; Yan, Zhibo; Gao, Xingsen; Zhang, Zhang; Liu, Jun-Ming

2018-03-01

Solar-driven photoelectrochemical (PEC) water splitting has attracted a great deal of attention recently. Silicon (Si) is an ideal light absorber for solar energy conversion. However, the poor stability and inefficient surface catalysis of Si photocathodes for the hydrogen evolution reaction (HER) have remained key challenges. Alternatively, MoS2 has been reported to exhibit excellent catalysis performance if sufficient active sites for the HER are available. Here, ultrathin MoS2 nanoflakes are directly synthesized to coat arrays of Ag-core Si-shell nanospheres (Ag@Si NSs) by using chemical vapor deposition. Due to the high surface area ratio and large curvature of these NSs, the as-grown MoS2 nanoflakes can accommodate more active sites. In addition, the high-quality coating of MoS2 nanoflakes on the Ag@Si NSs protects the photocathode from damage during the PEC reaction. An photocurrent density of 33.3 mA cm-2 at a voltage of -0.4 V is obtained versus the reversible hydrogen electrode. The as-prepared nanostructure as a hydrogen photocathode is evidenced to have high stability over 12 h PEC performance. This work opens up opportunities for composite photocathodes with high activity and stability using cheap and stable co-catalysts.
Ultrathin MoS2-coated Ag@Si nanosphere arrays as an efficient and stable photocathode for solar-driven hydrogen production.

PubMed

Zhou, Qingwei; Su, Shaoqiang; Hu, Die; Lin, Lin; Yan, Zhibo; Gao, Xingsen; Zhang, Zhang; Liu, Jun-Ming

2018-01-30

Solar-driven photoelectrochemical (PEC) water splitting has attracted a great deal of attention recently. Silicon (Si) is an ideal light absorber for solar energy conversion. However, the poor stability and inefficient surface catalysis of Si photocathodes for the hydrogen evolution reaction (HER) have remained key challenges. Alternatively, MoS 2 has been reported to exhibit excellent catalysis performance if sufficient active sites for the HER are available. Here, ultrathin MoS 2 nanoflakes are directly synthesized to coat arrays of Ag-core Si-shell nanospheres (Ag@Si NSs) by using chemical vapor deposition. Due to the high surface area ratio and large curvature of these NSs, the as-grown MoS 2 nanoflakes can accommodate more active sites. In addition, the high-quality coating of MoS 2 nanoflakes on the Ag@Si NSs protects the photocathode from damage during the PEC reaction. An photocurrent density of 33.3 mA cm -2 at a voltage of -0.4 V is obtained versus the reversible hydrogen electrode. The as-prepared nanostructure as a hydrogen photocathode is evidenced to have high stability over 12 h PEC performance. This work opens up opportunities for composite photocathodes with high activity and stability using cheap and stable co-catalysts.
Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells

NASA Astrophysics Data System (ADS)

Reichel, Christian; Würfel, Uli; Winkler, Kristina; Schleiermacher, Hans-Frieder; Kohlstädt, Markus; Unmüssig, Moritz; Messmer, Christoph A.; Hermle, Martin; Glunz, Stefan W.

2018-01-01

In the last years, novel materials for the formation of electron-selective contacts on n-type crystalline silicon (c-Si) heterojunction solar cells were explored as an interfacial layer between the metal electrode and the c-Si wafer. Besides inorganic materials like transition metal oxides or alkali metal fluorides, also interfacial layers based on organic molecules with a permanent dipole moment are promising candidates to improve the contact properties. Here, the dipole effect plays an essential role in the modification of the interface and effective work function of the contact. The amino acids L-histidine, L-tryptophan, L-phenylalanine, glycine, and sarcosine, the nucleobase adenine, and the heterocycle 4-hydroxypyridine were investigated as dipole materials for an electron-selective contact on the back of p- and n-type c-Si with a metal electrode based on aluminum (Al). Furthermore, the effect of an added fluorosurfactant on the resulting contact properties was examined. The performance of n-type c-Si solar cells with a boron diffusion on the front was significantly increased when L-histidine and/or the fluorosurfactant was applied as a full-area back surface field. This improvement was attributed to the modification of the interface and the effective work function of the contact by the dipole material which was corroborated by numerical device simulations. For these solar cells, conversion efficiencies of 17.5% were obtained with open-circuit voltages (Voc) of 625 mV and fill factors of 76.3%, showing the potential of organic interface dipoles for silicon organic heterojunction solar cells due to their simple formation by solution processing and their low thermal budget requirements.
Improvement in thermoelectric power factor of mechanically alloyed p-type SiGe by incorporation of TiB{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmad, Sajid, E-mail: sajidahmadiitkgp@gmail.com; Dubey, K.; Bhattacharya, Shovit

2016-05-23

Nearly 60% of the world’s useful energy is wasted as heat and recovering a fraction of this waste heat by converting it as useful electrical power is an important area of research{sup [1]}. Thermoelectric power generators (TEG) are solid state devices which converts heat into electricity. TEG consists of n and p-type thermoelements connected electrically in series and thermally in parallel{sup [2]}. Silicon germanium (SiGe) alloy is one of the conventional high temperature thermoelectric materials and is being used in radio-isotopes based thermoelectric power generators for deep space exploration programs.Temperature (T) dependence of thermoelectric (TE) properties of p-type SiGe andmore » p-type SiGe-x wt.%TiB{sub 2} (x=6,8,10%) nanocomposite materials has been studied with in the temperature range of 300 K to 1100 K. It is observed that there is an improvement in the power factor (α{sup 2}/ρ) of SiGe alloy on addition of TiB{sub 2} upto 8 wt.% that is mainly due to increase in the Seebeck coefficient (α) and electrical conductivity (σ) of the alloy.« less
A new approach to light up the application of semiconductor nanomaterials for photoelectrochemical biosensors: using self-operating photocathode as a highly selective enzyme sensor.

PubMed

Wang, Guang-Li; Liu, Kang-Li; Dong, Yu-Ming; Wu, Xiu-Ming; Li, Zai-Jun; Zhang, Chi

2014-12-15

Due to the intrinsic hole oxidation reaction occurred on the photoanode surface, currently developed photoelectrochemical biosensors suffer from the interference from coexisting reductive species (acting as electron donor) and a novel design strategy of photoelectrode for photoelectrochemical detection is urgently required. In this paper, a self-operating photocathode based on CdS quantum dots sensitized three-dimensional (3D) nanoporous NiO was designed and created, which showed highly selective and reversible response to dissolved oxygen (acting as electron acceptor) in the electrolyte solution. Using glucose oxidase (GOD) as a biocatalyst, a novel photoelectrochemical sensor for glucose was developed. The commonly encountered interferents such as H2O2, ascorbic acid (AA), cysteine (Cys), dopamine (DA), etc., almost had no effect for the cathodic photocurrent of the 3D NiO/CdS electrode, though these substances were proved to greatly influence the photocurrent of photoanodes, which indicated greatly improved selectivity of the method. The method was applied to detect glucose in real samples including serum and glucose injections with satisfactory results. This study could provide a new train of thought on designing of self-operating photocathode in photoelectrochemical sensing, promoting the application of semiconductor nanomaterials in photoelectrochemistry. Copyright © 2014 Elsevier B.V. All rights reserved.
Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

NASA Astrophysics Data System (ADS)

Shen, Haoting

The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance was compared. A series of p-type c-Si wafers with varying resistivity/doping density were used for this study in order to evaluate the effect of carrier diffusion length on device performance. The saturation current densities (J0) of the radial junction devices were consistently larger than that of the planar devices as a result of the larger junction area. Despite the increased leakage currents, the radial junction HIT cells exhibited similar Voc compared to the planar cells. In addition, at high doping densities (5˜1018 cm-3), the J sc (16.7mA/cm2) and collection efficiency (6.3%) of the radial junction devices was higher than that of comparable planar cells (J sc 12.7 mA/cm2 and efficiency 5.2%), demonstrating improved collection of photogenerated carriers in this geometry.
Dy–Mn–Si as a representative of family of ‘Dy–Transition Metal–Si’ systems: Its isothermal sections, empirical rProd. Type: FTPules and new rare-earth manganese silicides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morozkin, A.V., E-mail: morozkin@general.chem.msu.ru; Knotko, A.V.; Yapaskurt, V.O.

2013-10-15

X-ray and microprobe analyses were employed for the investigation of Dy–Mn–Si system at 870/1070/1170 K. The Dy–Mn–Si system, contains the known DyMn{sub 2}Si{sub 2}, DyMnSi and Dy{sub 2}Mn{sub 3}Si{sub 5} compounds and DyMn{sub 4}Si{sub 2}, Dy{sub 2}MnSi{sub 2} and Dy{sub 3}Mn{sub 2}Si{sub 3} were new compounds identified first time and their structure are of the type TmCu{sub 4}Sb{sub 2}, Sc{sub 2}CoSi{sub 2} and Hf{sub 3}Ni{sub 2}Si{sub 3} respectively. The quasi-binary solid solutions were detected at 870/1070/1170 K: the ThMn{sub 12}-type Dy{sub 8}Mn{sub 87}Si{sub 5}, Th{sub 6}Mn{sub 23}-type Dy{sub 23}Mn{sub 72}Si{sub 5}, MgCu{sub 2}-type Dy{sub 33}Mn{sub 58}Si{sub 9} and AlB{sub 2}-typemore » Dy{sub 38}Mn{sub 2}Si{sub 58}. The other binary compounds of the Dy–Mn–Si system do not show any visible solubility. New phases R{sub 2}MnSi{sub 2} and R{sub 3}Mn{sub 2}Si{sub 3} (R=Gd, Tb, Ho–Tm) were found out and their structure of the type Sc{sub 2}CoSi{sub 2} and Hf{sub 3}Ni{sub 2}Si{sub 3} respectively. The specific features of ‘Dy–Transition Metal–Si’ systems were discussed. - Graphical abstract: The isothermal section of Dy–Mn–Si contains the known DyMn{sub 2}Si{sub 2}, DyMnSi, Dy{sub 2}Mn{sub 3}Si{sub 5} and new TmCu{sub 4}Sb{sub 2}-type DyMn{sub 4}Si{sub 2}, Sc{sub 2}CoSi{sub 2}-type Dy{sub 2}MnSi{sub 2} and Hf{sub 3}Ni{sub 2}Si{sub 3}-type Dy{sub 3}Mn{sub 2}Si{sub 3} ternary compounds. The ternary solid solution based on the binary compounds of the Dy–Mn and Dy–Si systems: the ThMn{sub 12}-type Dy{sub 8}Mn{sub 87}Si{sub 5}, Th{sub 6}Mn{sub 23}-type Dy{sub 23}Mn{sub 72}Si{sub 5}, MgCu{sub 2}-type Dy{sub 33}Mn{sub 58}Si{sub 9} and AlB{sub 2}-type Dy{sub 38}Mn{sub 2}Si{sub 58}. The other binary compounds of the Dy–Mn–Si system do not show any visible solubility. New Sc{sub 2}CoSi{sub 2}-type R{sub 2}MnSi{sub 2} and Hf{sub 3}Ni{sub 2}Si{sub 3}-type R{sub 3}Mn{sub 2}Si{sub 3} phases were discovered for R=Gd, Tb, Ho–Tm. Display Omitted - Highlights: • The Dy–Mn–Si section contains three known and three new ternary compounds (phases). • New phase the TmCu{sub 4}Sb{sub 2}-type DyMn{sub 4}Si{sub 2} compound. • New Sc{sub 2}CoSi{sub 2}-type R{sub 2}MnSi{sub 2} and Hf{sub 3}Ni{sub 2}Si{sub 3}-type R{sub 3}Mn{sub 2}Si{sub 3} were detected for R=Gd–Tm. • Dy–Mn–Si supplements the ‘Dy–3d metal–Si’ series and leads to the ‘RT{sub m}X{sub n}’ row's rule.« less
Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Y. M.

2004-12-01

The key objective of this subcontract was to take the first steps to extend the radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) manufacturing technology of Energy Photovoltaics, Inc. (EPV), to the promising field of a-Si/nc-Si solar cell fabrication by demonstrating ''proof-of-concept'' devices of good efficiencies that previously were believed to be unobtainable in single-chamber reactors owing to contamination problems. A complementary goal was to find a new high-rate deposition method that can conceivably be deployed in large PECVD-type reactors. We emphasize that our goal was not to produce 'champion' devices of near-record efficiencies, but rather, to achieve modestly high efficiencies usingmore » a far simpler (cheaper) system, via practical processing methods and materials. To directly attack issues in solar-cell fabrication at EPV, the nc-Si thin films were studied almost exclusively in the p-i-n device configuration (as absorbers or i-layers), not as stand-alone films. Highly efficient, p-i-n type, nc-Si-based solar cells are generally grown on expensive, laboratory superstrates, such as custom ZnO/glass of high texture (granular surface) and low absorption. Also standard was the use of a highly effective back-reflector ZnO/Ag, where the ZnO can be surface-textured for efficient diffuse reflection. The high-efficiency ''champion'' devices made by the PECVD methods were invariably prepared in sophisticated (i.e., expensive), multi-chamber, or at least load-locked deposition systems. The electrode utilization efficiency, defined as the surface-area ratio of the powered electrode to that of the substrates, was typically low at about one (1:1). To evaluate the true potential of nc-Si absorbers for cost-competitive, commercially viable manufacturing of large-area PV modules, we took a more down-to-earth approach, based on our proven production of a-Si PV modules by a massively parallel batch process in single-chamber RF-PECVD systems, to the study of nc-Si solar cells, with the aim of producing high-efficiency a-Si/nc-Si solar cells and sub-modules.« less
High-Efficiency Silicon/Organic Heterojunction Solar Cells with Improved Junction Quality and Interface Passivation.

PubMed

He, Jian; Gao, Pingqi; Ling, Zhaoheng; Ding, Li; Yang, Zhenhai; Ye, Jichun; Cui, Yi

2016-12-27

Silicon/organic heterojunction solar cells (HSCs) based on conjugated polymers, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and n-type silicon (n-Si) have attracted wide attention due to their potential advantages of high efficiency and low cost. However, the state-of-the-art efficiencies are still far from satisfactory due to the inferior junction quality. Here, facile treatments were applied by pretreating the n-Si wafer in tetramethylammonium hydroxide (TMAH) solution and using a capping copper iodide (CuI) layer on the PEDOT:PSS layer to achieve a high-quality Schottky junction. Detailed photoelectric characteristics indicated that the surface recombination was greatly suppressed after TMAH pretreatment, which increased the thickness of the interfacial oxide layer. Furthermore, the CuI capping layer induced a strong inversion layer near the n-Si surface, resulting in an excellent field effect passivation. With the collaborative improvements in the interface chemical and electrical passivation, a competitive open-circuit voltage of 0.656 V and a high fill factor of 78.1% were achieved, leading to a stable efficiency of over 14.3% for the planar n-Si/PEDOT:PSS HSCs. Our findings suggest promising strategies to further exploit the full voltage as well as efficiency potentials for Si/organic solar cells.

Behavior of ceramics at 1200 C in a simulated gas turbine environment

NASA Technical Reports Server (NTRS)

Sanders, W. A.; Probst, H. B.

1974-01-01

This report summarizes programs at the NASA Lewis Research Center evaluating several classes of commercial ceramics, in a high gas velocity burner rig simulating a gas turbine engine environment. Testing of 23 ceramics in rod geometry identified SiC and Si3N4 as outstanding in resistance to oxidation and thermal stress and identified the failure modes of other ceramics. Further testing of a group of 15 types of SiC and Si3N4 in simulated vane shape geometry has identified a hot pressed SiC, a reaction sintered SiC, and hot pressed Si3N4 as the best of that group. SiC and Si3N4 test specimens were compared on the basis of weight change, dimensional reductions, metallography, fluorescent penetrant inspection, X-ray diffraction analyses, and failure mode.
Transport properties of Sb doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Usha, Philipose

2011-10-01

n-type Si nanowires were synthesized at ambient pressure using SiCl4 as Si source and Sb source as the dopant. Sb doping of 3-4 wt % was achieved through a post growth diffusion technique. The nanowires were found to have an amorphous oxide shell that developed post-growth; the thickness of the shell is estimated to be about 3-4 nm. The composition of the amorphous shell covering the crystalline Si core was determined by Raman spectroscopy, with evidence that the shell was an amorphous oxide layer. Optical characterization of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell covering the Si nanowire core. Etching of the oxide shell was found to decrease the intensity of this green emission. A single undoped Si nanowire contacted in an FET type configuration was found to be p-type with channel mobility of 20 cm^2V-1S-1. Sb doped Si nanowires exhibited n-type behavior, compensating for the holes in the undoped nanowire. The doped nanowires had carrier mobility and concentration of 160 cm^2V-1S-1 and 9.6 x 10^18cm-3 respectively.
Study of p-type and intrinsic materials for amorphous silicon based solar cells

NASA Astrophysics Data System (ADS)

Du, Wenhui

This dissertation summarizes the research work on the investigation and optimization of high efficiency hydrogenated amorphous silicon (a-Si:H) based thin film n-i-p single-junction and multi-junction solar cells, deposited using radio frequency (RF) and very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD) techniques. The fabrication and characterization of high quality p-type and intrinsic materials for a-Si:H based solar cells have been systematically and intensively studied. Hydrogen dilution, substrate temperature, gas flow rate, RF- or VHF-power density, and films deposition time have been optimized to obtain "on-the-edge" materials. To understand the material structure of the silicon p-layer providing a high Voc a-Si:H solar cell, hydrogenated amorphous, protocrystalline, and nanocrystalline silicon p-layers have been prepared using RF-PECVD and characterized by Raman spectroscopy and high resolution transmission electronic microscopy (HRTEM). It was found that the optimum Si:H p-layer for n-i-p a-Si:H solar cells is composed of fine-grained nanocrystals with crystallite sizes in the range of 3-5 nm embedded in an amorphous network. Using the optimized p-layer, an a-Si:H single-junction solar cell with a very high Voc value of 1.042 V and a FF value of 0.74 has been obtained. a-Si:H, a-SiGe:H and nc-Si:H i-layers have been prepared using RF- and VHF-PECVD techniques and monitored by different optical and electrical characterizations. Single-junction a-Si:H, a-SiGe and nc-Si:H cells have been developed and optimized. Intermediate bandgap a-SiGe:H solar cells achieved efficiencies over 12.5%. On the basis of optimized component cells, we achieved a-Si:Hla-SiGe:H tandem solar cells with efficiencies of ˜12.9% and a-Si:H/a-SiGe:H/a-SiGe:H triple-junction cells with efficiencies of ˜12.03%. VHF-PECVD technique was used to increase the deposition rates of the narrow bandgap materials. The deposition rate for a-SiGe:H i-layer attained 9 A/sec and the solar cell had a V oc of 0.588 V, Jsc of 20.4 mA/cm2, FF of 0.63, and efficiency of 7.6%. Preliminary research on the preparation of a-Si:Hlnc-Si:H tandem solar cells and a-Si:Hla-SiGe:Hlnc-Si:H triple-junction cells has also been undertaken using VHF nc-Si:H bottom cells with deposition rates of 6 A/sec. All I-V measurements were carried out under AM1.5G (100 MW/cm2) and the cell area was 0.25 cm2.
s-Triazine and tri-s-triazine based organic-inorganic hybrid gels prepared from chlorosilanes by exchange reactions.

PubMed

El-Gamel, Nadia E A; Schwarz, Marcus; Brendler, Erica; Kroke, Edwin

2006-12-07

Hybrid polymers [(DeltaO3)4Si3]n and [(DeltaO3)SiMe]n (where Delta = C6N7 or C3N3) have been prepared by a novel sol-gel process based on exchange reactions of MeSiCl3 or SiCl4 with C6N7(OSiMe3)3 and C3N3(OSiMe3)3.
Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures.

PubMed

Liu, Baodan; Yang, Bing; Yuan, Fang; Liu, Qingyun; Shi, Dan; Jiang, Chunhai; Zhang, Jinsong; Staedler, Thorsten; Jiang, Xin

2015-12-09

In this work, we demonstrate a new strategy to create WZ-GaN/3C-SiC heterostructure nanowires, which feature controllable morphologies. The latter is realized by exploiting the stacking faults in 3C-SiC as preferential nucleation sites for the growth of WZ-GaN. Initially, cubic SiC nanowires with an average diameter of ∼100 nm, which display periodic stacking fault sections, are synthesized in a chemical vapor deposition (CVD) process to serve as the core of the heterostructure. Subsequently, hexagonal wurtzite-type GaN shells with different shapes are grown on the surface of 3C-SiC wire core. In this context, it is possible to obtain two types of WZ-GaN/3C-SiC heterostructure nanowires by means of carefully controlling the corresponding CVD reactions. Here, the stacking faults, initially formed in 3C-SiC nanowires, play a key role in guiding the epitaxial growth of WZ-GaN as they represent surface areas of the 3C-SiC nanowires that feature a higher surface energy. A dedicated structural analysis of the interfacial region by means of high-resolution transmission electron microscopy (HRTEM) revealed that the disordering of the atom arrangements in the SiC defect area promotes a lattice-matching with respect to the WZ-GaN phase, which results in a preferential nucleation. All WZ-GaN crystal domains exhibit an epitaxial growth on 3C-SiC featuring a crystallographic relationship of [12̅10](WZ-GaN) //[011̅](3C-SiC), (0001)(WZ-GaN)//(111)(3C-SiC), and d(WZ-GaN(0001)) ≈ 2d(3C-SiC(111)). The approach to utilize structural defects of a nanowire core to induce a preferential nucleation of foreign shells generally opens up a number of opportunities for the epitaxial growth of a wide range of semiconductor nanostructures which are otherwise impossible to acquire. Consequently, this concept possesses tremendous potential for the applications of semiconductor heterostructures in various fields such as optics, electrics, electronics, and photocatalysis for energy harvesting and environment processing.
A comparative study of Cr-X-N (X=Zr, Si) coatings for the improvement of the low-speed torque efficiency of a hydraulic piston pump

NASA Astrophysics Data System (ADS)

Hong, Yeh-Sun; Lee, Sang-Yul

2008-02-01

The internal parts of hydraulic pumps operating at variable speed should be protected from insufficient lubrication. The axial piston type pumps employ a steel-base cylinder barrel rotating on a soft bronze valves plate with a slide contact, where the insufficient lubrication of these components can cause rapid wear of the valve plate and increase the friction loss. In this study, the cylinder barrel surface was deposited with CrZrN coatings, which were expected to improve the tribological contact with a valve plate under low-speed mixed lubrication conditions. Its effect on the improvement of the low-speed torque efficiency of a hydraulic piston pump was investigated and compared with that from the CrSiN coating. The coated cylinder barrels showed much lower friction coefficients and wear rates of the valve plates than the uncoated plasma-nitride one. In particular, the CrZrN coatings revealed better performance than the CrSiN coatings. By representing the improvement in the torque efficiency of the whole pump based upon the degree of the friction coefficient reduction, the CrZrN coatings exhibited approximately a 0.35% higher improvement at 300 bar and 100 rpm than CrSiN coatings. The possible failure modes of the coatings coated on the barrel were sugested and the microstructures of the coatings seemed to have a strong effect on the film failure mode.
The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, M.-H., E-mail: mhliaoa@ntu.edu.tw; Chen, P.-G.

The capping stressed SiN film is one of the most important process steps for the dislocation stress memorization technique (D-SMT), which has been used widely in the current industry, for the electron mobility booster in the n-type transistor beyond the 32/28 nm technology node. In this work, we found that the different stress-level SiN capping films influence the crystal re-growth velocities along different directions including [100] and [110] directions in Ge a lot. It can be further used to optimize the dislocation angle in the transistor during the D-SMT process and then results in the largest channel stress distribution to boostmore » the device performance in the Ge n-FinFETs. Based on the theoretical calculation and experimental demonstration, it shows that the Ge three dimensional (3D) n-FinFETs device performance is improved ∼55% with the usage of +3 GPa tensile stressed SiN capping film. The channel stress and dislocation angle is ∼2.5 GPa and 30°, measured by the atomic force microscope-Raman technique and transmission electron microscopy, respectively.« less
SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2010-03-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.
Silicon Cluster Tool | Photovoltaic Research | NREL

Science.gov Websites

Material Deposition/Device Fabrication Very-high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD) for microcrystalline silicon (Âµc-Si:H) Combinatorial plasma-enhanced chemical vapor deposition (Combi-PECVD) for p-type a-Si:H Plasma-enhanced chemical vapor deposition (PECVD) for n-type a-Si:H
Measurement of N-Type 6H SiC Minority-Carrier Diffusion Lengths by Electron Bombardment of Schottky Barriers

NASA Technical Reports Server (NTRS)

Hubbard, S. M.; Tabib-Azar, M.; Balley, S.; Rybickid, G.; Neudeck, P.; Raffaelle, R.

2004-01-01

Minority-Carrier diffusion lengths of n-type 6H-SiC were measured using the electron-beam induced current (EBIC) technique. Experimental values of primary beam current, EBIC, and beam voltage were obtained for a variety of SIC samples. This data was used to calculate experimental diode efficiency vs. beam voltage curves. These curves were fit to theoretically calculated efficiency curves, and the diffusion length and metal layer thickness were extracted. The hole diffusion length in n-6H SiC ranged from 0.93 +/- 0.15 microns.
(QC Themes) Type-Two Quantum Computing in PBG-Based Cavities for Efficient Simulation of Lattice Gas Dynamics

DTIC Science & Technology

2008-04-26

substrate Si3N4 Diameter : 540 nm Pitch : 760 nm Diamond Holes in Diamond (HID) Pillars of Diamond (POD) POD with Electrooptic Polymer at Center 3D ...Diamond film : 2 um Si- substrate Al : 0.2 um PMMA : 0.5um 1. Deposit UNCD film 2. Deposit Al metal 3. Deposit PMMA on Al 4. E-beam Lithography 5...band-gap (PBG) based cavities. The cavities are etched directly on to the diamond substrate . The set of coupled qubits in each spot represents an
On the annealing-induced enhancement of the interface properties of NiO:Cu/wet-SiOx/n-Si tunnelling junction solar cells

NASA Astrophysics Data System (ADS)

Yang, Xueliang; Liu, Wei; Chen, Jingwei; Sun, Yun

2018-04-01

Using metal oxides to form a carrier-selective interface on crystalline silicon (c-Si) has recently generated considerable interest for use with c-Si photovoltaics because of the potential to reduce cost. n-type oxides, such as MoO3, V2O5, and WO3, have been widely studied. In this work, a p-type oxide, Cu-doped NiO (NiO:Cu), is explored as a transparent hole-selective contact to n-Si. An ultrathin SiOx layer, fabricated by a wet-chemical method (wet-SiOx), is introduced at the NiO:Cu/n-Si interface to achieve a tunnelling junction solar cell. Interestingly, it was observed that the interface quality of the NiO:Cu/wet-SiOx/n-Si heterojunction was dramatically enhanced by post-deposition annealing (PDA) at a temperature of 200 °C. Our device exhibits an improved power conversion efficiency of 10.8%, which is the highest efficiency among NiO/Si heterojunction photo-electric devices to date. It is demonstrated that the 200 °C PDA treatment enhances the built-in field by a reduction in the interface density of states (Dit) but does not influence the work function of the NiO:Cu thin layer. This stable work function after the PDA treatment is in conflict with the changed built-in field according to the Schottky model. Thus, the Bardeen model is introduced for this physical insight: the enhancement of the built-in field originates from the unpinning of the Fermi levels of NiO:Cu and n-Si by the interface state reduction.
Cadmium Sulphide-Reduced Graphene Oxide-Modified Photoelectrode-Based Photoelectrochemical Sensing Platform for Copper(II) Ions

PubMed Central

Ibrahim, I; Lim, H. N; Huang, N. M; Pandikumar, A

2016-01-01

A photoelectrochemical (PEC) sensor with excellent sensitivity and detection toward copper (II) ions (Cu2+) was developed using a cadmium sulphide-reduced graphene oxide (CdS-rGO) nanocomposite on an indium tin oxide (ITO) surface, with triethanolamine (TEA) used as the sacrificial electron donor. The CdS nanoparticles were initially synthesized via the aerosol-assisted chemical vapor deposition (AACVD) method using cadmium acetate and thiourea as the precursors to Cd2+ and S2-, respectively. Graphene oxide (GO) was then dip-coated onto the CdS electrode and sintered under an argon gas flow (50 mL/min) for the reduction process. The nanostructured CdS was adhered securely to the ITO by a continuous network of rGO that also acted as an avenue to intensify the transfer of electrons from the conduction band of CdS. The photoelectrochemical results indicated that the ITO/CdS-rGO photoelectrode could facilitate broad UV-visible light absorption, which would lead to a higher and steady-state photocurrent response in the presence of TEA in 0.1 M KCl. The photocurrent decreased with an increase in the concentration of Cu2+ ions. The photoelectrode response for Cu2+ ion detection had a linear range of 0.5–120 μM, with a limit of detection (LoD) of 16 nM. The proposed PEC sensor displayed ultra-sensitivity and good selectivity toward Cu2+ ion detection. PMID:27176635
Band line-up determination at p- and n-type Al/4H-SiC Schottky interfaces using photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Kohlscheen, J.; Emirov, Y. N.; Beerbom, M. M.; Wolan, J. T.; Saddow, S. E.; Chung, G.; MacMillan, M. F.; Schlaf, R.

2003-09-01

The band lineup of p- and n-type 4H-SiC/Al interfaces was determined using x-ray photoemission spectroscopy (XPS). Al was deposited in situ on ex situ cleaned SiC substrates in several steps starting at 1.2 Å up to 238 Å nominal film thickness. Before growth and after each growth step, the sample surface was characterized in situ by XPS. The analysis of the spectral shifts indicated that during the initial deposition stages the Al films react with the ambient surface contamination layer present on the samples after insertion into vacuum. At higher coverage metallic Al clusters are formed. The band lineups were determined from the analysis of the core level peak shifts and the positions of the valence bands maxima (VBM) depending on the Al overlayer thickness. Shifts of the Si 2p and C 1s XPS core levels occurred to higher (lower) binding energy for the p-(n-)type substrates, which was attributed to the occurrence of band bending due to Fermi-level equilibration at the interface. The hole injection barrier at the p-type interface was determined to be 1.83±0.1 eV, while the n-type interface revealed an electron injection barrier of 0.98±0.1 eV. Due to the weak features in the SiC valence bands measured by XPS, the VBM positions were determined using the Si 2p peak positions. This procedure required the determination of the Si 2p-to-VBM binding energy difference (99.34 eV), which was obtained from additional measurements.
TOPICAL REVIEW: The doping process and dopant characteristics of GaN

NASA Astrophysics Data System (ADS)

Sheu, J. K.; Chi, G. C.

2002-06-01

The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on the electrical and optical properties of GaN-based materials are reviewed. In addition, the roles of unintentionally introduced impurities, such as C, H, and O, and grown-in defects, such as vacancy and antisite point defects, are also discussed. The doping process during epitaxial growth of GaN, AlGaN, InGaN, and their superlattice structures is described. Doping using the diffusion process and ion implantation techniques is also discussed. A p-n junction formed by Si implantation into p-type GaN is successfully fabricated. The results on crystal structure, electrical resistivity, carrier mobility, and optical spectra obtained by means of x-rays, low-temperature Hall measurements, and photoluminescence are also discussed.
High Mobility SiGe/Si n-Type Structures and Field Effect Transistors on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Ponchak, George E.; Mueller, Carl H.; Croke, Edward T.

2004-01-01

SiGe/Si n-type modulation doped field effect transistors (MODFETs) fabricated on sapphire substrates have been characterized at microwave frequencies for the first time. The highest measured room temperature electron mobility is 1380 sq cm/V-sec at a carrier density of 1.8 x 10(exp 12)/sq cm for a MODFET structure, and 900 sq cm/V-sec at a carrier density of 1.3 x 10/sq cm for a phosphorus ion implanted sample. A two finger, 2 x 200 micron gate n-MODFET has a peak transconductance of 37 mS/mm at a drain to source voltage of 2.5 V and a transducer gain of 6.4 dB at 1 GHz.
Solar-rechargeable battery based on photoelectrochemical water oxidation: Solar water battery

PubMed Central

Kim, Gonu; Oh, Misol; Park, Yiseul

2016-01-01

As an alternative to the photoelectrochemical water splitting for use in the fuel cells used to generate electrical power, this study set out to develop a solar energy rechargeable battery system based on photoelectrochemical water oxidation. We refer to this design as a “solar water battery”. The solar water battery integrates a photoelectrochemical cell and battery into a single device. It uses a water oxidation reaction to simultaneously convert and store solar energy. With the solar water battery, light striking the photoelectrode causes the water to be photo-oxidized, thus charging the battery. During the discharge process, the solar water battery reduces oxygen to water with a high coulombic efficiency (>90%) and a high average output voltage (0.6 V). Because the reduction potential of oxygen is more positive [E0 (O2/H2O) = 1.23 V vs. NHE] than common catholytes (e.g., iodide, sulfur), a high discharge voltage is produced. The solar water battery also exhibits a superior storage ability, maintaining 99% of its specific discharge capacitance after 10 h of storage, without any evidence of self-discharge. The optimization of the cell design and configuration, taking the presence of oxygen in the cell into account, was critical to achieving an efficient photocharge/discharge. PMID:27629362
Solar-rechargeable battery based on photoelectrochemical water oxidation: Solar water battery.

PubMed

Kim, Gonu; Oh, Misol; Park, Yiseul

2016-09-15

As an alternative to the photoelectrochemical water splitting for use in the fuel cells used to generate electrical power, this study set out to develop a solar energy rechargeable battery system based on photoelectrochemical water oxidation. We refer to this design as a "solar water battery". The solar water battery integrates a photoelectrochemical cell and battery into a single device. It uses a water oxidation reaction to simultaneously convert and store solar energy. With the solar water battery, light striking the photoelectrode causes the water to be photo-oxidized, thus charging the battery. During the discharge process, the solar water battery reduces oxygen to water with a high coulombic efficiency (>90%) and a high average output voltage (0.6 V). Because the reduction potential of oxygen is more positive [E(0) (O2/H2O) = 1.23 V vs. NHE] than common catholytes (e.g., iodide, sulfur), a high discharge voltage is produced. The solar water battery also exhibits a superior storage ability, maintaining 99% of its specific discharge capacitance after 10 h of storage, without any evidence of self-discharge. The optimization of the cell design and configuration, taking the presence of oxygen in the cell into account, was critical to achieving an efficient photocharge/discharge.
Vertical MoSe2-MoO x p-n heterojunction and its application in optoelectronics.

PubMed

Chen, Xiaoshuang; Liu, Guangbo; Hu, Yunxia; Cao, Wenwu; Hu, PingAn; Hu, Wenping

2018-01-26

The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe 2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO 2 /Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ∼8 μm. Vertical MoSe 2 -MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe 2 -MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W -1 , 0.85 × 10 8 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm -2 . These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.
Vertical MoSe2-MoO x p-n heterojunction and its application in optoelectronics

NASA Astrophysics Data System (ADS)

Chen, Xiaoshuang; Liu, Guangbo; Hu, Yunxia; Cao, Wenwu; Hu, PingAn; Hu, Wenping

2018-01-01

The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO2/Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ˜8 μm. Vertical MoSe2-MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe2-MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W-1, 0.85 × 108 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm-2. These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.

A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy

PubMed Central

Ferro, Gabriel; Chaussende, Didier

2017-01-01

Nitrogen doping of 4H-SiC during vapor phase epitaxy is still lacking of a general model explaining the apparently contradictory trends obtained by different teams. In this paper, the evolutions of nitrogen incorporation (on both polar Si and C faces) as a function of the main growth parameters (C/Si ratio, temperature, pressure and growth rate) are reviewed and explained using a model based on surface exchanges between the gas phase and the uppermost 4H-SiC atomic layers. In this model, N incorporation is driven mainly by the transient formation of C vacancies, due to H2 etching, at the surface or near the surface. It is shown that all the growth parameters are influencing the probability of C vacancies formation in a similar manner as they do for N incorporation. The surface exchange model proposes a new framework for explaining the experimental results even beyond the commonly accepted reactor type dependency. PMID:28211528
Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance

DOEpatents

Zolper, John C.; Sherwin, Marc E.; Baca, Albert G.

2000-01-01

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.
Sintering activation energy MoSi2-WSi2-Si3N4 ceramic

NASA Astrophysics Data System (ADS)

Titov, D. D.; Lysenkov, A. S.; Kargin, Yu F.; Frolova, M. G.; Gorshkov, V. A.; Perevislov, S. N.

2018-04-01

The activation energy of sintering process was calculated based on dilatometric studies of shrinkage processes (Mo,W)Si2 + Si3N4 composite ceramic. (Mo,W)Si2 powders was obtained by solid-phase solutions of 70 wt% MoSi2 and 30 wt% WSi2 by SHS in the ISMAN RAS. The concentration rate Si3N4 was from 1 to 15 wt.%. The sintering was carried out to 1850°C in Ar atmosphere the heating rate of 5, 10, 12 and 15°C/min by the way of dilatometer tests. Based on the differential kinetic analysis method (Friedman’s method), the sintering process activation energy of (Mo,W)Si2 + Si3N4 were calculated. The two-stage sintering process and the dependence of the activation energy on the Si3N4 content was shown. Average value of 370 kJ/mol for Q was obtained.
A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

NASA Astrophysics Data System (ADS)

Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

2009-05-01

Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.
Potential-dependent recombination kinetics of photogenerated electrons in n- and p-type GaN photoelectrodes studied by time-resolved IR absorption spectroscopy.

PubMed

Yamakata, Akira; Yoshida, Masaaki; Kubota, Jun; Osawa, Masatoshi; Domen, Kazunari

2011-07-27

Recombination kinetics of photogenerated electrons in n-type and p-type GaN photoelectrodes active for H(2) and O(2) evolution, respectively, from water was examined by time-resolved IR absorption (TR-IR) spectroscopy. Illumination of a GaN film with UV pulse (355 nm and 6 ns in duration) gives transient interference spectra in both transmittance and reflection modes. Simulation shows that the interference spectra are caused by photogenerated electrons. We observed that recombination in the microsecond region is greatly affected by the applied potentials, the lifetime becoming longer at negative and positive potentials for n- and p-type GaN electrodes, respectively. There is a good correlation between potential dependence of the steady-state reaction efficiency and that of the number of surviving electrons in the millisecond region. We also performed potential jump measurement to examine the shift in Fermi level by photogenerated charge carriers. In the case of n-type GaN, the electrode potential jumps to the negative side by accumulation of electrons in the bulk. However, in the case of p-type GaN, the electrode potential first jumps to the negative side within 20 μs and gradually shifts to the positive side in a few milliseconds, while the number of charge carriers is constant at >0.2 ms. This two-step process is ascribed to electron transport from the bulk to the surface of GaN, because the electrode potential is sensitive to the number of electrons in the bulk. The results confirm that TR-IR combined with potential jump measurement provides useful information for understanding the behavior of charge carriers in photoelectrochemical systems.
Photoelectrochemical processes in polymer-tethered CdSe nanocrystals.

PubMed

Shallcross, R Clayton; D'Ambruoso, Gemma D; Pyun, Jeffrey; Armstrong, Neal R

2010-03-03

We demonstrate the electrochemical capture of CdSe semiconductor nanocrystals (NCs), with thiophene-terminated carboxylic acid capping ligands, at the surfaces of electrodeposited poly(thiophene) films (i) poly((diethyl)propylenedixoythiophene), P(Et)(2)ProDOT; (ii) poly(propylenedioxythiophene), PProDOT; and (iii) poly(ethylenedioxythiophene), PEDOT, coupled with the exploration of their photoelectrochemical properties. Host polymer films were created using a kinetically controlled electrodeposition protocol on activated indium-tin oxide electrodes (ITO), producing conformal films that facilitate high rates of electron transfer. ProDOT-terminated, ligand-capped CdSe-NCs were captured at the outer surface of the host polymer films using a unique pulse-potential step electrodeposition protocol, providing for nearly close-packed monolayers of the NCs at the host polymer/solution interface. These polymer-confined CdSe NCs were used as sensitizers in the photoelectrochemical reduction of methyl viologen (MV(+2)). High internal quantum efficiencies (IQEs) are estimated for photoelectrochemical sensitized MV(+2) reduction using CdSe NCs ranging from 3.1 to 7.0 nm diameters. Cathodic photocurrent at high MV(+2) concentrations are limited by the rate of hole-capture by the host polymer from photoexcited NCs. The rate of this hole-capture process is determined by (a) the onset potential for reductive dedoping of the host polymer film; (b) the concentration ratio of neutral to oxidized forms of the host polymer ([P(n)]/[P(ox)]); and (c) the NC diameter, which controls its valence band energy, E(VB). These relationships are consistent with control of photoinduced electron transfer by Marcus-like excess free energy relationships. Our electrochemical assembly methods provide an enabling route to the capture of functional NCs in conducting polymer hosts in both photoelectrochemical and photovoltaic energy conversion systems.
Band-engineering of TiO2 as a wide-band gap semiconductor using organic chromophore dyes

NASA Astrophysics Data System (ADS)

Wahyuningsih, S.; Kartini, I.; Ramelan, A. H.; Saputri, L. N. M. Z.; Munawaroh, H.

2017-07-01

Bond-engineering as applied to semiconductor materials refers to the manipulation of the energy bands in order to control charge transfer processes in a device. When the device in question is a photoelectrochemical cell, the charges affected by drift become the focus of the study. The ideal band gap of semiconductors for enhancement of photocatalyst activity can be lowered to match with visible light absorption and the location of conduction Band (CB) should be raised to meet the reducing capacity. Otherwise, by the addition of the chromofor organic dyes, the wide-band gab can be influences by interacation resulting between TiO2 surface and the dyes. We have done the impruvisation wide-band gap of TiO2 by the addition of organic chromophore dye, and the addition of transition metal dopand. The TiO2 morphology influence the light absorption as well as the surface modification. The organic chromophore dye was syntesized by formation complexes compound of Co(PAR)(SiPA)(PAR)= 4-(2-piridylazoresorcinol), SiPA = Silyl propil amine). The result showed that the chromophore groups adsorbed onto TiO2 surface can increase the visible light absorption of wide-band gab semiconductor. Initial absorption of a chromophore will affect light penetration into the material surfaces. The use of photonic material as a solar cell shows this phenomenon clearly from the IPCE (incident photon to current conversion efficiency) measurement data. Organic chromophore dyes of Co(PAR)(SiPA) exhibited the long wavelength absorption character compared to the N719 dye (from Dyesol).
New tetragonal derivatives of cubic NaZn13-type structure: RNi6Si6 compounds, crystal structure and magnetic ordering (R=Y, La, Ce, Sm, Gd-Yb)

NASA Astrophysics Data System (ADS)

Pani, M.; Manfrinetti, P.; Provino, A.; Yuan, Fang; Mozharivskyj, Y.; Morozkin, A. V.; Knotko, A. V.; Garshev, A. V.; Yapaskurt, V. O.; Isnard, O.

2014-02-01

Novel RNi6Si6 compounds adopt the new CeNi6Si6-type structure for R=La-Ce (tP52, space group P4/nbm N 125-1) and new YNi6Si6-type structure for R=Y, Sm, Gd-Yb (tP52, space group P4barb2N 117) that are tetragonal derivative of NaZn13-type structure, like LaCo9Si4-type. The CeNi6Si6, GdNi6Si6, TbNi6Si6, DyNi6Si6 and HoNi6Si6 compounds are Curie-Weiss paramagnets down to ~30 K, and do not order magnetically down to 5 K. However, the inverse paramagnetic susceptibility of LaNi6Si6 does not follow Curie-Weiss law. The DyNi6Si6 shows ferromagnetic-like saturation behaviour at 5 K in applied fields of 50 kOe, giving rise to a magnetic moment value of 6.5 μB/f.u. in 50 kOe. The powder neutron diffraction study in zero applied filed indicates square modulated the c-collinear antiferromagnetic ordering of TbNi6Si6 with K=[±1/4, ±1/4, 0] wave vector below ~10 K. The CeNi6Si6, GdNi6Si6, TbNi6Si6, DyNi6Si6 and HoNi6Si6 compounds are Curie-Weiss paramagnets down to ~30 K, and do not order magnetically down to 4.2 K. The powder neutron diffraction study in zero applied filed indicates square modulated the c-collinear antiferromagnetic ordering of TbNi6Si6 with K=[±1/4, ±1/4, 0] wave vector below ~10 K.
Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2016-09-01

We have analyzed the mechanisms of leakage current conduction in passivating silicon dioxide (SiO2) films grown on (0 0 0 1) silicon (Si) face of n-type 4H-SiC (silicon carbide). It was observed that the experimentally measured gate current density in metal-oxide-silicon carbide (MOSiC) structures under positive gate bias at an oxide field Eox above 5 MV/cm is comprised of Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps in the SiO2 gap, IFN and IPF, respectively at temperatures between 27 and 200 °C. In MOSiC structures, PF mechanism dominates FN tunneling of electrons from the accumulation layer of n-4H-SiC due to high density (up to 1013 cm-2) of carbon-related acceptor-like traps located at about 2.5 eV below the SiO2 conduction band (CB). These current conduction mechanisms were taken into account in studying hole injection/trapping into 10 nm-thick tunnel oxide on the Si face of 4H-SiC during electron injection from n-4H-SiC under high-field electrical stress with positive bias on the heavily doped n-type polysilicon (n+-polySi) gate at a wide range of temperatures between 27 and 200 °C. Holes were generated in the n+-polySi anode material by the hot-electrons during their transport through thin oxide films at oxide electric fields Eox from 5.6 to 8.0 MV/cm (prior to the intrinsic oxide breakdown field). Time-to-breakdown tBD of the gate dielectric was found to follow reciprocal field (1/E) model irrespective of stress temperatures. Despite the significant amount of process-induced interfacial electron traps contributing to a large amount of leakage current via PF emission in thermally grown SiO2 on the Si-face of n-4H-SiC, MOSiC devices having a 10 nm-thick SiO2 film can be safely used in 5 V TTL logic circuits over a period of 10 years.
Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.

The forward current–voltage characteristics of mesa-epitaxial 4H-SiC Schottky diodes are measured in high electric fields (up to 4 × 10{sup 5} V/cm) in the n-type base region. A semi-empirical formula for the field dependence of the electron drift velocity in 4H-SiC along the hexagonal axis of the crystal is derived. It is shown that the saturated drift velocity is (1.55 ± 0.05) × 10{sup 7} cm/s in electric fields higher than 2 × 10{sup 5} V/cm.
Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

PubMed

Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

2009-04-22

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.
Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood

1997-01-01

We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.
Pressure-controlled terahertz filter based on 1D photonic crystal with a defective semiconductor

NASA Astrophysics Data System (ADS)

Qinwen, XUE; Xiaohua, WANG; Chenglin, LIU; Youwen, LIU

2018-03-01

The tunable terahertz (THz) filter has been designed and studied, which is composed of 1D photonic crystal (PC) containing a defect layer of semiconductor GaAs. The analytical solution of 1D defective PC (1DDPC) is deduced based on the transfer matrix method, and the electromagnetic plane wave numerical simulation of this 1DDPC is performed by using the finite element method. The calculated and simulated results have confirmed that the filtering transmittance of this 1DDPC in symmetric structure of air/(Si/SiO2) N /GaAs/(SiO2/Si) N /air is far higher than in asymmetric structure of air/(Si/SiO2) N /GaAs/(Si/SiO2) N /air, where the filtering frequency can be tuned by the external pressure. It can provide a feasible route to design the external pressure-controlled THz filter based on 1DPC with a defective semiconductor.
Photoelectrochemical Complexes of Fucoxanthin-Chlorophyll Protein for Bio-Photovoltaic Conversion with a High Open-Circuit Photovoltage.

PubMed

Zhang, Tianning; Liu, Cheng; Dong, Wenjing; Wang, Wenda; Sun, Yan; Chen, Xin; Yang, Chunhong; Dai, Ning

2017-12-05

Open-circuit photovoltage (V oc ) is among the critical parameters for achieving an efficient light-to-charge conversion in existing solar photovoltaic devices. Natural photosynthesis exploits light-harvesting chlorophyll (Chl) protein complexes to transfer sunlight energy efficiently. We describe the exploitation of photosynthetic fucoxanthin-chlorophyll protein (FCP) complexes for realizing photoelectrochemical cells with a high V oc . An antenna-dependent photocurrent response and a V oc up to 0.72 V are observed and demonstrated in the bio-photovoltaic devices fabricated with photosynthetic FCP complexes and TiO 2 nanostructures. Such high V oc is determined by fucoxanthin in FCP complexes, and is rarely found in photoelectrochemical cells with other natural light-harvesting antenna. We think that the FCP-based bio-photovoltaic conversion will provide an opportunity to fabricate environmental benign photoelectrochemical cells with high V oc , and also help improve the understanding of the essential physics behind the light-to-charge conversion in photosynthetic complexes. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Photoelectrochemical etching of epitaxial InGaN thin films: Self-limited kinetics and nanostructuring

DOE PAGES

Xiao, Xiaoyin; Fischer, Arthur J.; Coltrin, Michael E.; ...

2014-10-22

We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using narrowband lasers with linewidth less than ~1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting process associated with electron-hole-pair creation and/or annihilation. At high photo-excitation rates, voltammograms are superlinear in shape, indicating, for the voltage ranges studied here, a voltage-dependent rate-limiting process associated with surface electrochemical oxidation. As PEC etching proceeds, the thin film becomes rough at the nanoscale,more » and ultimately evolves into an ensemble of nanoparticles. As a result, this change in InGaN film volume and morphology leads to a characteristic dependence of PEC etch rate on time: an incubation time, followed by a rise, then a peak, then a slow decay.« less
Capillary photoelectrode structures for photoelectrochemical and photocatalytic cells

DOEpatents

Wang, Xudong; Li, Zhaodong; Cai, Zhiyong; Yao, Chunhua

2017-05-02

Photocatalytic structures having a capillary-force based electrolyte delivery system are provided. Also provided are photoelectrochemical and photocatalytic cells incorporating the structures and methods for using the cells to generate hydrogen and/or oxygen from water. The photocatalytic structures use an electrolyte-transporting strip comprising a porous network of cellulose nanofibers to transport electrolyte from a body of the electrolyte to a porous photoelectrode or a porous photocatalytic substrate via capillary force.
Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Stockman, S. A.; Fresina, M. T.; Hartmann, Q. J.; Hanson, A. W.; Gardner, N. F.; Baker, J. E.; Stillman, G. E.

1994-04-01

The incorporation of residual carbon has been studied for InP grown at low temperatures using TMIn and PH3 by low-pressure metalorganic chemical vapor deposition. n-type conduction is observed with electron concentrations as high as 1×1018 cm-3, and the electrical activation efficiency is 5%-15%. Carbon incorporation is found to be highly dependent on substrate temperature, suggesting that the rate-limiting step is desorption of CHy (0≤y≤3) from the surface during growth. Hydrogen is also incorporated in the layers during growth. The electron mobilities are lower for C-doped InP than for Si-doped InP. InP/InGaAs heterojunction bipolar transistors with C as the p-type base dopant and either Si or C as the n-type emitter dopant have been fabricated and compared. Devices with a carbon-doped base and emitter showed degraded performance, likely as a result of deep levels incorporated during growth of the emitter.
Morphology modulation of SrTiO3/TiO2 heterostructures for enhanced photoelectrochemical performance.

PubMed

Jiao, Zhengbo; Chen, Tao; Yu, Hongchao; Wang, Teng; Lu, Gongxuan; Bi, Yingpu

2014-04-01

Design and fabrication of nanoscale semiconductors with regulatable morphology or structure has attracted tremendous interest due to the dependency relationship between properties and architectures. Two types of SrTiO3/TiO2 nanocomposites with different morphologies and structures have been fabricated by controlling the kinetics of hydrothermal reactions. One is TiO2 nanotube arrays densely wrapped by SrTiO3 film and the other is SrTiO3 nanospheres distributed on the top region of TiO2 nanotube arrays, which has been firstly fabricated. It has been found that the photoelectrochemical performances of these heterostructures are crucially dominated by their architectures. Heterostructured SrTiO3/TiO2 nanotube arrays were fabricated by traditional method in the absence of NaOH and they exhibited higher photoelectrochemical performance than pure TiO2 nanotube arrays. However, the compact SrTiO3 coating film on the sidewalls of TiO2 nanotube arrays could inevitably destroy the tubular structures of TiO2 and thus go against the vectorial transport of electrons. Interestingly, when excess NaOH was added into the growth solution, SrTiO3 nanospheres would be rationally grafted on the top of TiO2 nanotube arrays, which could preserve the tubular structures of TiO2, and thus further improve the photoelectrochemical performance. Copyright © 2013 Elsevier Inc. All rights reserved.
Effect of different electrolytes on porous GaN using photo-electrochemical etching

NASA Astrophysics Data System (ADS)

Al-Heuseen, K.; Hashim, M. R.; Ali, N. K.

2011-05-01

This article reports the properties and the behavior of GaN during the photoelectrochemical etching process using four different electrolytes. The measurements show that the porosity strongly depends on the electrolyte and highly affects the surface morphology of etched samples, which has been revealed by scanning electron microscopy (SEM) images. Peak intensity of the photoluminescence (PL) spectra of the porous GaN samples was observed to be enhanced and strongly depend on the electrolytes. Among the samples, there is a little difference in the peak position indicating that the change of porosity has little influence on the PL peak shift, while it highly affecting the peak intensity. Raman spectra of porous GaN under four different solution exhibit phonon mode E 2 (high), A 1 (LO), A 1 (TO) and E 2 (low). There was a red shift in E 2 (high) in all samples, indicating a relaxation of stress in the porous GaN surface with respect to the underlying single crystalline epitaxial GaN. Raman and PL intensities were high for samples etched in H 2SO 4:H 2O 2 and KOH followed by the samples etched in HF:HNO 3 and in HF:C 2H 5OH.
Direct Band Gap Gallium Antimony Phosphide (GaSbxP1−x) Alloys

PubMed Central

Russell, H. B.; Andriotis, A. N.; Menon, M.; Jasinski, J. B.; Martinez-Garcia, A.; Sunkara, M. K.

2016-01-01

Here, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1–2 at% antimony (Sb) utilizing both density functional theory based computations and experiments. First principles density functional theory calculations of GaSbxP1−x alloys in a 216 atom supercell configuration indicate that an indirect to direct band gap transition occurs at x = 0.0092 or higher Sb incorporation into GaSbxP1−x. Furthermore, these calculations indicate band edge straddling of the hydrogen evolution and oxygen evolution reactions for compositions ranging from x = 0.0092 Sb up to at least x = 0.065 Sb making it a candidate for use in a Schottky type photoelectrochemical water splitting device. GaSbxP1−x nanowires were synthesized by reactive transport utilizing a microwave plasma discharge with average compositions ranging from x = 0.06 to x = 0.12 Sb and direct band gaps between 2.21 eV and 1.33 eV. Photoelectrochemical experiments show that the material is photoactive with p-type conductivity. This study brings attention to a relatively uninvestigated, tunable band gap semiconductor system with tremendous potential in many fields. PMID:26860470

Detection of the spin injection into silicon by broadband ferromagnetic resonance spectroscopy

NASA Astrophysics Data System (ADS)

Ohshima, Ryo; Dushenko, Sergey; Ando, Yuichiro; Weiler, Mathias; Klingler, Stefan; Huebl, Hans; Shinjo, Teruya; Goennenwein, Sebastian; Shiraishi, Masashi

Silicon (Si) based spintronics was eagerly studied to realize spin metal-oxide-semiconductor field-effect-transistors (MOSFETs) since it has long spin lifetime and gate tunability. The operation of n-type Si spin MOSFET was successfully demonstrated, however, their resistivity is still too low for practical applications and a systematic study of spin injection properties (such as spin lifetime, spin injection efficiency and so on) from the ferromagnet into the Si with different resistivity is awaited for further progress in Si spintronics. In this study, we show the spin injection by spin pumping technique in the NiFe(Py)/Si system. Broadband FMR measurement was carried out to see the enhancement of the Gilbert damping parameter with different resistivity of the Si channel. Additional damping indicated the successful spin injection by spin pumping and observed even for the Si channel with high resistivity, which is necessary for the gate operation of the device.
Method for improving the toughness of silicon carbide-based ceramics

DOEpatents

Tein, Tseng-Ying; Hilmas, Gregory E.

1996-01-01

Method of improving the toughness of SiC-based ceramics. SiC, , AlN, Al.sub.2 O.sub.3 and optionally .alpha.-Si.sub.3 N.sub.4 are hot pressed to form a material which includes AlN polytypoids within its structure.
Particulate photocatalyst sheets for Z-scheme water splitting: advantages over powder suspension and photoelectrochemical systems and future challenges.

PubMed

Wang, Qian; Hisatomi, Takashi; Katayama, Masao; Takata, Tsuyoshi; Minegishi, Tsutomu; Kudo, Akihiko; Yamada, Taro; Domen, Kazunari

2017-04-28

Water splitting using semiconductor photocatalysts has been attracting growing interest as a means of solar energy based conversion of water to hydrogen, a clean and renewable fuel. Z-scheme photocatalytic water splitting based on the two-step excitation of an oxygen evolution photocatalyst (OEP) and a hydrogen evolution photocatalyst (HEP) is a promising approach toward the utilisation of visible light. In particular, a photocatalyst sheet system consisting of HEP and OEP particles embedded in a conductive layer has been recently proposed as a new means of obtaining efficient and scalable redox mediator-free Z-scheme solar water splitting. In this paper, we discuss the advantages and disadvantages of the photocatalyst sheet approach compared to conventional photocatalyst powder suspension and photoelectrochemical systems through an examination of the water splitting activity of Z-scheme systems based on SrTiO 3 :La,Rh as the HEP and BiVO 4 :Mo as the OEP. This photocatalyst sheet was found to split pure water much more efficiently than the powder suspension and photoelectrochemical systems, because the underlying metal layer efficiently transfers electrons from the OEP to the HEP. The photocatalyst sheet also outperformed a photoelectrochemical parallel cell during pure water splitting. The effects of H + /OH - concentration overpotentials and of the IR drop are reduced in the case of the photocatalyst sheet compared to photoelectrochemical systems, because the HEP and OEP are situated in close proximity to one another. Therefore, the photocatalyst sheet design is well-suited to efficient large-scale applications. Nevertheless, it is also noted that the photocatalytic activity of these sheets drops markedly with increasing background pressure because of reverse reactions involving molecular oxygen under illumination as well as delays in gas bubble desorption. It is shown that appropriate surface modifications allow the photocatalyst sheet to maintain its water splitting activity at elevated pressure. Accordingly, we conclude that the photocatalyst sheet system is a viable option for the realisation of efficient solar fuel production.
Enhancing the Efficiency of Silicon-Based Solar Cells by the Piezo-Phototronic Effect.

PubMed

Zhu, Laipan; Wang, Longfei; Pan, Caofeng; Chen, Libo; Xue, Fei; Chen, Baodong; Yang, Leijing; Su, Li; Wang, Zhong Lin

2017-02-28

Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p + -Si/p-Si/n + -Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n + -Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.
Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory

PubMed Central

Kim, Sungjun; Chang, Yao-Feng; Kim, Min-Hwi; Kim, Tae-Hyeon; Kim, Yoon; Park, Byung-Gook

2017-01-01

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device’s Si bottom electrode had a higher dopant concentration (As ion > 1019 cm−3) than the Ni/SiNx/n+ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm−3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode. PMID:28772819
Promoting Charge Separation and Injection by Optimizing the Interfaces of GaN:ZnO Photoanode for Efficient Solar Water Oxidation.

PubMed

Wang, Zhiliang; Zong, Xu; Gao, Yuying; Han, Jingfeng; Xu, Zhiqiang; Li, Zheng; Ding, Chunmei; Wang, Shengyang; Li, Can

2017-09-13

Photoelectrochemical water splitting provides an attractive way to store solar energy in molecular hydrogen as a kind of sustainable fuel. To achieve high solar conversion efficiency, the most stringent criteria are effective charge separation and injection in electrodes. Herein, efficient photoelectrochemical water oxidation is realized by optimizing charge separation and surface charge transfer of GaN:ZnO photoanode. The charge separation can be greatly improved through modified moisture-assisted nitridation and HCl acid treatment, by which the interfaces in GaN:ZnO solid solution particles are optimized and recombination centers existing at the interfaces are depressed in GaN:ZnO photoanode. Moreover, a multimetal phosphide of NiCoFeP was employed as water oxidation cocatalyst to improve the charge injection at the photoanode/electrolyte interface. Consequently, it significantly decreases the overpotential and brings the photocurrent to a benchmark of 3.9 mA cm -2 at 1.23 V vs RHE and a solar conversion efficiency over 1% was obtained.
Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-10-01

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler-Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide-semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.
Free-standing epitaxial graphene on silicon carbide and transport barriers in layered materials

NASA Astrophysics Data System (ADS)

Shivaraman, Shriram

This thesis is based on the topic of layered materials, in which different layers interact with each other via van der Waals forces. The majority of this thesis deals with epitaxial graphene (EG) obtained from silicon carbide (SiC). Free-standing epitaxial graphene (FSEG) structures are produced from EG using a photoelectrochemical (PEC) etching process developed for making suspended graphene structures on a large-scale. These structures are investigated for their mechanical and electrical properties. For doubly-clamped FSEG structures, a unique U-beam effect is observed which causes orders of magnitude increase in their mechanical resonance frequency compared to that expected using simple beam theory. Combined magnetotransport and Raman spectroscopy studies reveal that FSEG devices produced from nominally monolayer graphene on the Si-face of SiC exhibit properties of an inhomogeneously doped bilayer after becoming suspended. This suggests that the buffer layer which precedes graphene growth on the Si-face of SiC gets converted to a graphene layer after the PEC etching process. In the second theme of this thesis, transport barriers in layered materials are investigated. The EG-SiC interface is studied using a combination of electrical (I-V, C-V) and photocurrent spectroscopy techniques. It is shown that the interface may be described as having a Schottky barrier for electron transport with a Gaussian distribution of barrier heights. Another interface explored in this work is that between different layers of MoS 2, a layered material belonging to the class of transition metal dichalcogenides. This interface maybe thought of as a one-dimensional junction. Four-point transport measurements indicate the presence of a barrier for electron transport at this interface. A simple model of the junction as a region with an increased threshold voltage and degraded mobility is suggested. The final chapter is a collection of works based on the topic of layered materials, which are not related to the main theme of the thesis. They include fabrication and characterization details of a dual-gated bilayer graphene device, an investigation of the graphene-Si interface and hexagonal boron nitride-based membranes. These are presented in the hope that they may be useful for further investigations along those directions.
Improvement of minority carrier life time in N-type monocrystalline Si by the Czochralski method

NASA Astrophysics Data System (ADS)

Baik, Sungsun; Pang, Ilsun; Kim, Jaemin; Kim, Kwanghun

2016-07-01

The installation amount of solar power plants increases every year. Multi-crystalline Si solar cells comprise a large share of the market of solar power plants. Multi-crystalline and single-crystalline Si solar cells are competing against one another in the market. Many single-crystalline companies are trying to develop and produce n-type solar cells with higher cell efficiency than that of p-type. In n-type wafers with high cell efficiency, wafer quality has become increasingly important. In order to make ingots with higher MCLT, the effects of both poly types related to metal impurities and pull speeds related to vacancy concentration on minority carrier life time were studied. In the final part of ingots, poly types related to the metal impurities are a dominant factor on MCLT. In the initial part of ingots, pull speeds related to vacancy concentration are a dominant factor on MCLT. [Figure not available: see fulltext.
STELLAR ORIGINS OF EXTREMELY {sup 13}C- AND {sup 15}N-ENRICHED PRESOLAR SIC GRAINS: NOVAE OR SUPERNOVAE?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Nan; Nittler, Larry R.; Alexander, Conel M. O’D.

Extreme excesses of {sup 13}C ({sup 12}C/{sup 13}C < 10) and {sup 15}N ({sup 14}N/{sup 15}N < 20) in rare presolar SiC grains have been considered diagnostic of an origin in classical novae, though an origin in core collapse supernovae (CCSNe) has also been proposed. We report C, N, and Si isotope data for 14 submicron- to micron-sized {sup 13}C- and {sup 15}N-enriched presolar SiC grains ({sup 12}C/{sup 13}C < 16 and {sup 14}N/{sup 15}N < ∼100) from Murchison, and their correlated Mg–Al, S, and Ca–Ti isotope data when available. These grains are enriched in {sup 13}C and {sup 15}N,more » but with quite diverse Si isotopic signatures. Four grains with {sup 29,30}Si excesses similar to those of type C SiC grains likely came from CCSNe, which experienced explosive H burning occurred during explosions. The independent coexistence of proton- and neutron-capture isotopic signatures in these grains strongly supports heterogeneous H ingestion into the He shell in pre-supernovae. Two of the seven putative nova grains with {sup 30}Si excesses and {sup 29}Si depletions show lower-than-solar {sup 34}S/{sup 32}S ratios that cannot be explained by classical nova nucleosynthetic models. We discuss these signatures within the CCSN scenario. For the remaining five putative nova grains, both nova and supernova origins are viable because explosive H burning in the two stellar sites could result in quite similar proton-capture isotopic signatures. Three of the grains are sub-type AB grains that are also {sup 13}C enriched, but have a range of higher {sup 14}N/{sup 15}N. We found that {sup 15}N-enriched AB grains (∼50 < {sup 14}N/{sup 15}N < ∼100) have distinctive isotopic signatures compared to putative nova grains, such as higher {sup 14}N/{sup 15}N, lower {sup 26}Al/{sup 27}Al, and lack of {sup 30}Si excess, indicating weaker proton-capture nucleosynthetic environments.« less
The Influence of Heat Treatment on the Electrical Characteristics of Semi-Insulating SiC Layers Obtained by Irradiating n-SiC with High-Energy Argon Ions

NASA Astrophysics Data System (ADS)

Ivanov, P. A.; Potapov, A. S.; Kudoyarov, M. F.; Kozlovskii, M. A.; Samsonova, T. P.

2018-03-01

Irradiation of crystalline n-type silicon carbide ( n-SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating ( i-SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i-SiC layers has been studied. The most high-ohmic ion-irradiated i-SiC layers with room-temperature resistivity of no less than 1.6 × 1013 Ω cm were obtained upon the heat treatment at 600°C, whereas the resistivity of such layers heat-treated at 230°C was about 5 × 107 Ω cm.
Explanation of the photocurrent generation of Cu2O quantum dots (QDs) sensitized p-CuSCN stable photoelectrochemical cells

NASA Astrophysics Data System (ADS)

Karunarathna, P. G. D. C. K.; Samarakoon, S. P. A. U. K.; Fernando, C. A. N.

2018-01-01

Fabrication of Cu2O quantum dots (QDs) sensitized p-CuSCN photoelectrode provides a significant photocurrent enhancement in photoelectrochemical medium for the first time. The variation of photocurrent quantum efficiency (Ф%) with Cu2O amount formed on p-CuSCN was presented. Here, two maxima of photocurrent could be observed in Cu/p-CuSCN/Cu2O photoelectrodes. The first photocurrent peak was due to the Cu2O QDs sensitization on p-CuSCN layer, and the second photocurrent peak was due to the formation of p-n junction. Time development of the photocurrent for Cu/p-CuSCN/n-Cu2O photoelectrodes and material characterization from Fourier transform infrared (FTIR) spectra, scanning electron microscope (SEM) images, energy dispersive x-ray spectroscopy (EDX) and x-ray diffraction (XRD) were done in this study in detailed.
High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

PubMed

Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

2013-03-01

This article describes the growth and device characteristics of vertically aligned high-quality uniaxial p-GaN/InxGa1-xN/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) on Si(111) substrates grown by metal-organic chemical vapor deposition (MOCVD) technique. The resultant nanowires (NWs), with a diameter of 200-250 nm, have an average length of 2 μm. The feasibility of growing high-quality NWs with well-controlled indium composition MQW structure is demonstrated. These resultant NWs grown on Si(111) substrates were utilized for fabricating vertical-type light-emitting diodes (LEDs). The steep and intense photoluminescence (PL) and cathodoluminescence (CL) spectra are observed, based on the strain-free NWs on Si(111) substrates. High-resolution transmission electron microscopy (HR-TEM) analysis revealed that the MQW NWs are grown along the c-plane with uniform thickness. The current-voltage (I-V) characteristics of these NWs exhibited typical p-n junction LEDs and showed a sharp onset voltage at 2.75 V in the forward bias. The output power is linearly increased with increasing current. The result indicates that the pulsed MOCVD technique is an effective method to grow uniaxial p-GaN/InxGa1-xN/GaN MQW/n-GaN NWs on Si(111), which is more advantageous than other growth techniques, such as molecular beam epitaxy. These results suggest the uniaxial NWs are promising to allow flat-band quantum structures, which can enhance the efficiency of LEDs.
Method for improving the toughness of silicon carbide-based ceramics

DOEpatents

Tein, T.Y.; Hilmas, G.E.

1996-12-03

Method of improving the toughness of SiC-based ceramics is disclosed. SiC, , AlN, Al{sub 2}O{sub 3} and optionally {alpha}-Si{sub 3}N{sub 4} are hot pressed to form a material which includes AlN polytypoids within its structure. 1 fig.
Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization.

PubMed

Kabra, Vinay; Aamir, Lubna; Malik, M M

2014-01-01

A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The effect of UV illumination on the I-V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.
Positronium formation at Si surfaces

NASA Astrophysics Data System (ADS)

Kawasuso, A.; Maekawa, M.; Miyashita, A.; Wada, K.; Kaiwa, T.; Nagashima, Y.

2018-06-01

Positronium formation at Si(111) and Si(001) surfaces has been investigated by changing the doping level systematically over the range 300-1000 K. The temperature dependence of the positronium fraction varied with the doping condition, and there were practically no differences between the two surface orientations. In heavily doped n -type Si (n ≳1018cm-3) , the positronium fraction (IPs) increased above 700 K and reached more than 95% at 1000 K. In undoped and lightly doped Si (n , p ≲1015cm-3 ), IPs decreased from 300 to 500 K and increased above 700 K. In heavily doped p -type Si (p ≳1018cm-3 ), IPs increased in two steps: one at 500-600 K and one above 700 K. Overall, the positronium fraction increased with the amount of n -type doping. These phenomena were found to be dominated by two kinds of positronium with energies of 0.6-1.5 eV and 0.1-0.2 eV, which were attributed to the work-function mechanism and the surface-positron-mediated process, respectively, with contributions from conduction electrons. The positron work function was estimated to be positive. This agrees with first-principles calculation. The positive positron work function implies that the formation of excitonic electron-positron bound states begins in the bulk subsurface region and transits to the final positronium state in the vacuum.
Ultra-thin MoS₂ coated Ag@Si nanosphere arrays as efficient and stable photocathode for solar-driven hydrogen production.

PubMed

Zhou, Qingwei; Su, Shaoqiang; Hu, Die; Lin, Lin; Yan, Zhibo; Gao, Xingsen; Zhang, Zhang; Liu, Junming

2018-01-02

Solar-driven photoelectrochemical (PEC) water splitting has recently attracted much attention. Silicon (Si) is an ideal light absorber for solar energy conversion. However, the poor stability and inefficient surface catalysis of Si photocathode for hydrogen evolution reaction (HER) have been remained as the key challenges. Alternatively, MoS2 has been reported to exhibit the excellent catalysis performance if sufficient active sites for the HER are available. Here, ultra-thin MoS2 nanoflakes are directly synthesized to coat on the arrays of Ag-core Si-shell nanospheres (Ag@Si NSs) using the chemical vapor deposition (CVD). Due to the high surface area ratio and large curvature of these NSs, the as-grown MoS2 nanoflakes can accommodate more active sites. Meanwhile, the high-quality coating of MoS2 nanoflakes on the Ag@Si NSs protects the photocathode from damage during the PEC reaction. A high efficiency with a photocurrent of 33.3 mA cm-2 at a voltage of -0.4 V vs. the reversible hydrogen electrode is obtained. The as-prepared nanostructure as hydrogen photocathode is evidenced to have high stability over 12 hour PEC performance. This work opens opportunities for composite photocathode with high activity and stability using cheap and stable co-catalysts. © 2017 IOP Publishing Ltd.
Degradation of phosphor-in-glass encapsulants with various phosphor types for high power LEDs

NASA Astrophysics Data System (ADS)

Iqbal, Fauzia; Kim, Sunil; Kim, Hyungsun

2017-10-01

In order to replace conventional silicone-based phosphor light emitting diodes (LEDs), inorganic color converters with high thermal stabilities and transparencies, i.e., phosphors-in-glass (PiGs), have been investigated as encapsulants for high-power LEDs. In this paper, the effect of various types of phosphors, i.e., LuAG (green, Lu3Al5O12:Ce3+), silicate (yellow, Sr2SiO4:Eu2+), CASN (red, CaAlSiN3:Eu2+), and oxynitride (yellow, (Sr,Ba) Si2O2N2:Eu2+), on the reliability/degradation of the remote PiG encapsulants is explored for high power LEDs. For this purpose, a glass composition (SiO2-B2O3-ZnO-Na2O) was separately mixed with each type of phosphor and then sintered at appropriate temperatures to make the corresponding PiG. The reliabilities of the formed PiGs were evaluated by standard accelerated-aging tests (85 °C/85% RH) for 1000 h. Luminosity losses and shifts in the Commission Internationale de l'Eclairage (CIE) coordinates of the PiGs were measured before and after aging. Thermal, and moisture-induced quenching behavior was also analyzed. The surface of PiGs with different phosphors degraded differently, possibly because of structural incompatibilities between the glass matrix and phosphor type. Determining the compatibility of the glass composition with the type of phosphor used is therefore important in order to ensure the long-term stabilities of encapsulants for use in commercial LEDs.
Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd x Hg1- x Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

NASA Astrophysics Data System (ADS)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretskii, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Sidorov, G. Yu.

2017-06-01

In a temperature range of 9-200 K, temperature dependences of the differential resistance of space-charge region in the strong inversion mode are experimentally studied for MIS structures based on CdxHg1-xTe (x = 0.22-0.40) grown by molecular-beam epitaxy. The effect of various parameters of structures: the working layer composition, the type of a substrate, the type of insulator coating, and the presence of a near-surface graded-gap layer on the value of the product of differential resistance by the area is studied. It is shown that the values of the product RSCRA for MIS structures based on n-CdHgTe grown on a Si(013) substrate are smaller than those for structures based on the material grown on a GaAs(013) substrate. The values of the product RSCRA for MIS structures based on p-CdHgTe grown on a Si(013) substrate are comparable with the value of the analogous parameter for MIS structures based on p-CdHgTe grown on a GaAs(013) substrate.
A New Scheme for the Detection of Optical Radiation in the External Photoemissive Mode: Device Implementation

DTIC Science & Technology

2011-05-31

Ag that was 5µm thick and prepared at 550 C on a high resistivity Si(111) substrate. This absorption is typical of composite films prepared with...Radiometric Measurements In our Ag-Si composite film studies we used mainly n-type doped silicon, though we did prepare some Ag-Si films with p...type silicon targets. In particular we found that a 5µm thick film prepared at 550 C by magnetron co-sputtering from Ag and p-type Si (boron doped

Solar driven electrochromic photoelectrochemical fuel cells for simultaneous energy conversion, storage and self-powered sensing.

PubMed

Wang, Yanhu; Zhang, Lina; Cui, Kang; Xu, Caixia; Li, Hao; Liu, Hong; Yu, Jinghua

2018-02-15

One solar-driven electrochromic photoelectrochemical fuel cell (PFC) with highly efficient energy conversion and storage is easily constructed to achieve quantitative self-powered sensing. Layered bismuth oxyiodide-zinc oxide nanorod arrays (ZnO@BiOI NRA) with a core/shell p-n heterostructure are fabricated as the photoanode with electrochromic Prussian blue (PB) as the cathode. The core/shell p-n heterostructure for the ZnO@BiOI photoanode can effectively boost the photoelectrochemical (PEC) performance through the improvement of photon absorption and charge carrier separation. The optimal assembled PFC yields an open-circuit voltage (V OC ) of 0.48 V with the maximum power output density (P max ) as high as 155 μW cm -2 upon illumination. Benefitting from the interactive color-changing behavior of PB, the cathode not only exhibits cathodic catalytic activity in the PFC but also serves as an electrochromic display for self-powered sensing. The as-constructed PFC possesses multiple readable signal output nanochannels through the maximum power output density (P max ) of the PFC or the color change of PB. Meanwhile, the dual-signal-output makes the as-constructed self-powered sensor highly available in various operations demands with the enhanced reliability. With the advantages of high efficiency of PFCs, unique assay ability, and broad environmental suitability, the constructed self-powered platform shows broad application prospects as an integrated smart analytical device.
Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

PubMed

Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

2013-02-08

Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.
CdS/MoS2 heterojunction-based photoelectrochemical DNA biosensor via enhanced chemiluminescence excitation.

PubMed

Zang, Yang; Lei, Jianping; Hao, Qing; Ju, Huangxian

2016-03-15

This work developed a CdS/MoS2 heterojunction-based photoelectrochemical biosensor for sensitive detection of DNA under the enhanced chemiluminescence excitation of luminol catalyzed by hemin-DNA complex. The CdS/MoS2 photocathode was prepared by the stepwise assembly of MoS2 and CdS quantum dots (QDs) on indium tin oxide (ITO), and achieved about 280% increasing of photocurrent compared to pure CdS QDs electrode due to the formation of heterostructure. High photoconversion efficiency in the photoelectrochemical system was identified to be the rapid spatial charge separation of electron-hole pairs by the extension of electron transport time and electron lifetime. In the presence of target DNA, the catalytic hairpin assembly was triggered, and simultaneously the dual hemin-labeled DNA probe was introduced to capture DNA/CdS/MoS2 modified ITO electrode. Thus the chemiluminescence emission of luminol was enhanced via hemin-induced mimetic catalysis, leading to the physical light-free photoelectrochemical strategy. Under optimized conditions, the resulting photoelectrode was proportional to the logarithm of target DNA concentration in the range from 1 fM to 100 pM with a detection limit of 0.39 fM. Moreover, the cascade amplification biosensor demonstrated high selectivity, desirable stability and good reproducibility, showing great prospect in molecular diagnosis and bioanalysis. Copyright © 2015 Elsevier B.V. All rights reserved.
Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku

2014-01-01

Three-dimensional (3D) fin-channel charge trapping (CT) flash memories with different gate materials of physical-vapor-deposited (PVD) titanium nitride (TiN) and n+-polycrystalline silicon (poly-Si) have successfully been fabricated by using (100)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. Electrical characteristics of the fabricated flash memories including statistical threshold voltage (Vt) variability, endurance, and data retention have been comparatively investigated. It was experimentally found that a larger memory window and a deeper erase are obtained in PVD-TiN-gated metal-oxide-nitride-oxide-silicon (MONOS)-type flash memories than in poly-Si-gated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories. The larger memory window and deeper erase of MONOS-type flash memories are contributed by the higher work function of the PVD-TiN metal gate than of the n+-poly-Si gate, which is effective for suppressing electron back tunneling during erase operation. It was also found that the initial Vt roll-off due to the short-channel effect (SCE) is directly related to the memory window roll-off when the gate length (Lg) is scaled down to 46 nm or less.
Simultaneous enhancement of photovoltage and charge transfer in Cu{sub 2}O-based photocathode using buffer and protective layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Changli; Delaunay, Jean-Jacques, E-mail: jean@mech.t.u-tokyo.ac.jp; Hisatomi, Takashi

2016-07-18

Coating n-type buffer and protective layers on Cu{sub 2}O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu{sub 2}O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu{sub 2}O are examined. It is found that a Ga{sub 2}O{sub 3} buffer layer can form a buried junction with Cu{sub 2}O, which inhibits Cu{sub 2}O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO{sub 2} thin protective layer not only improves the stability of the photocathode but alsomore » enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.« less
Thermal Stability of Hi-Nicalon SiC Fiber in Nitrogen and Silicon Environments

NASA Technical Reports Server (NTRS)

Bhatt, R. T.; Garg, A.

1995-01-01

The room temperature tensile strength of uncoated and two types of pyrolytic boron nitride coated (PBN and Si-rich PBN) Hi-Nicalon SiC fibers was determined after 1 to 400 hr heat treatments to 1800 C under N2 pressures of 0.1, 2, and 4 MPa, and under 0.1 Mpa argon and vacuum environments. In addition, strength stability of both uncoated and coated fibers embedded in silicon powder and exposed to 0.1 MPa N2 for 24 hrs at temperatures to 1400 C was investigated. The uncoated and both types of BN coated fibers exposed to N2 for 1 hr showed noticeable strength degradation above 1400 C and 1600 C, respectively. The strength degradation appeared independent of nitrogen pressure, time of heat treatment, and surface coatings. TEM microstructural analysis suggests that flaws created due to SiC grain growth are responsible for the strength degradation. In contact with silicon powder, the uncoated and both types of PBN coated fibers degrade rapidly above 1350 C.
Characterization of a SiC MIS Schottky diode as RBS particle detector

NASA Astrophysics Data System (ADS)

Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

2018-02-01

A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.
Efficient and Selective Electrochemical and Photoelectrochemical Reduction of 5-Hydroxymethylfurfural to 2,5-Bis(hydroxymethyl)furan using Water as the Hydrogen Source

DOE PAGES

Roylance, John J.; Kim, Tae Woo; Choi, Kyoung-Shin

2016-02-17

Reductive biomass conversion has been conventionally conducted using H 2 gas under high-temperature and-pressure conditions. Here, efficient electrochemical reduction of 5-hydroxymethylfurfural (HMF), a key intermediate for biomass conversion, to 2,5-bis(hydroxymethyl)furan (BHMF), an important monomer for industrial processes, was demonstrated using Ag catalytic electrodes. This process uses water as the hydrogen source under ambient conditions and eliminates the need to generate and consume H 2 for hydrogenation, providing a practical and efficient route for BHMF production. By systematic investigation of HMF reduction on the Ag electrode surface, BHMF production was achieved with the Faradaic efficiency and selectivity nearing 100%, and plausiblemore » reduction mechanisms were also elucidated. Furthermore, construction of a photoelectrochemical cell (PEC) composed of an n-type BiVO 4 semiconductor anode, which uses photogenerated holes for water oxidation, and a catalytic Ag cathode, which uses photoexcited electrons from BiVO 4 for the reduction of HMF to BHMF, was demonstrated to utilize solar energy to significantly decrease the external voltage necessary for HMF reduction. This shows the possibility of coupling electrochemical HMF reduction and solar energy conversion, which can provide more efficient and environmentally benign routes for reductive biomass conversion.« less
Phosphorus doping of Si and Si1 - xGex grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4

NASA Astrophysics Data System (ADS)

Chen, L. P.; Huang, G. W.; Chang, C. Y.

1996-03-01

100 ppm PH3 diluted in hydrogen is used as the n-type dopant gas in Si and Si1-xGex epilayers grown by ultrahigh vacuum chemical vapor deposition (UHVCVD) using Si2H6 and GeH4. The phosphorus concentration in Si increases linearly at a small PH3 flow rate and becomes nearly saturated at higher flow rates, while the phosphorus concentration in Si1-xGex only shows a nearly linear behavior with PH3 flow rate. The growth rates of Si and Si1-xGex epilayers decrease seriously (˜50%) and slightly (˜10%) with the increase of PH3 flow rate, respectively. These results can be explained by a model based on the enhancement of hydrogen desorption rate at smaller PH3 flow rates and different levels of the effects of phosphorus blocking of surface-activated sites between Si and Si1-xGex epilayers at higher PH3 flow rates.
Highly specific enrichment of N-glycoproteome through a nonreductive amination reaction using Fe3O4@SiO2-aniline nanoparticles.

PubMed

Zhang, Ying; Yu, Meng; Zhang, Cheng; Wang, Yali; Di, Yi; Wang, Changchun; Lu, Haojie

2015-04-07

A novel method based on the conjunction of aldehydes from oxidized glycopeptides to aniline groups on magnetic nanoparticles via nonreductive amination is reported for the highly selective enrichment of N-glycopeptides. For the first time, a nonreductive amination reaction has been introduced into N-glycoproteome extraction, and correspondingly a new type of aniline-functionalized nanoparticle has been designed and synthesized.
GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Zheng, Chenju; Lv, Jiajiang; Gao, Yilin; Wang, Ruiqing; Liu, Sheng

2017-07-01

We demonstrate GaN-based double-layer electrode flip-chip light-emitting diodes (DLE-FCLED) with highly reflective indium-tin oxide (ITO)/distributed bragg reflector (DBR) p-type contact and via hole-based n-type contacts. Transparent thin ITO in combination with TiO2/SiO2 DBR is used for reflective p-type ohmic contact, resulting in a significant reduction in absorption of light by opaque metal electrodes. The finely distributed via hole-based n-type contacts are formed on the n-GaN layer by etching via holes through p-GaN and multiple quantum well (MQW) active layer, leading to reduced lateral current spreading length, and hence alleviated current crowding effect. The forward voltage of the DLE-FCLED is 0.31 V lower than that of the top-emitting LED at 90 mA. The light output power of DLE-FCLED is 15.7% and 80.8% higher than that of top-emitting LED at 90 mA and 300 mA, respectively. Compared to top- emitting LED, the external quantum efficiency (EQE) of DLE-FCLED is enhanced by 15.4% and 132% at 90 mA and 300 mA, respectively. The maximum light output power of the DLE-FCLED obtained at 195.6 A/cm2 is 1.33 times larger than that of the top-emitting LED obtained at 93 A/cm2.
New tetragonal derivatives of cubic NaZn{sub 13}-type structure: RNi{sub 6}Si{sub 6} compounds, crystal structure and magnetic ordering (R=Y, La, Ce, Sm, Gd–Yb)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pani, M.; Manfrinetti, P.; Provino, A.

2014-02-15

Novel RNi{sub 6}Si{sub 6} compounds adopt the new CeNi{sub 6}Si{sub 6}-type structure for R=La–Ce (tP52, space group P4/nbm N 125-1) and new YNi{sub 6}Si{sub 6}-type structure for R=Y, Sm, Gd–Yb (tP52, space group P4{sup ¯}b2N 117) that are tetragonal derivative of NaZn{sub 13}-type structure, like LaCo{sub 9}Si{sub 4}-type. The CeNi{sub 6}Si{sub 6}, GdNi{sub 6}Si{sub 6}, TbNi{sub 6}Si{sub 6}, DyNi{sub 6}Si{sub 6} and HoNi{sub 6}Si{sub 6} compounds are Curie–Weiss paramagnets down to ∼30 K, and do not order magnetically down to 5 K. However, the inverse paramagnetic susceptibility of LaNi{sub 6}Si{sub 6} does not follow Curie–Weiss law. The DyNi{sub 6}Si{sub 6}more » shows ferromagnetic-like saturation behaviour at 5 K in applied fields of 50 kOe, giving rise to a magnetic moment value of 6.5 μ{sub B}/f.u. in 50 kOe. The powder neutron diffraction study in zero applied filed indicates square modulated the c-collinear antiferromagnetic ordering of TbNi{sub 6}Si{sub 6} with K=[±1/4, ±1/4, 0] wave vector below ∼10 K. - Graphical abstract: Novel (La, Ce)Ni{sub 6}Si{sub 6} compounds adopt the new CeNi{sub 6}Si{sub 6}-type structure and (Y, Sm, Gd–Yb) adopt the new YNi{sub 6}Si{sub 6}-type structure that are tetragonal derivative of NaZn{sub 13}-type structure, like LaCo{sub 9}Si{sub 4}-type. The CeNi{sub 6}Si{sub 6}, GdNi{sub 6}Si{sub 6}, TbNi{sub 6}Si{sub 6}, DyNi{sub 6}Si{sub 6} and HoNi{sub 6}Si{sub 6} compounds are Curie–Weiss paramagnets down to ∼30 K, and do not order magnetically down to 4.2 K. The powder neutron diffraction study in zero applied filed indicates square modulated the c-collinear antiferromagnetic ordering of TbNi{sub 6}Si{sub 6} with K=[±1/4, ±1/4, 0] wave vector below ∼10 K. Display Omitted - Highlights: • The new (La, Ce)Ni{sub 6}Si{sub 6} compounds adopt the new CeNi{sub 6}Si{sub 6}-type structure. • The new (Y, Sm, Gd–Yb)Ni{sub 6}Si{sub 6} compounds adopt the new YNi{sub 6}Si{sub 6}-type structure. • TbNi{sub 6}Si{sub 6} has square modulated c-collinear antiferromagnetic ordering below ∼10 K.« less
In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Bin, E-mail: chenbinmse@gmail.com; Chen, Jun; Yao, Yuanzhao

Using the fine control of an electron beam (e-beam) in scanning electron microscopy with the capabilities of both electrical and optical imaging, the stacking fault (SF) formation together with its tuning of carrier lifetime was in situ monitored and investigated in p-type 4H-SiC homoepitaxial films. The SFs were formed through engineering basal plane dislocations with the energy supplied by the e-beam. The e-beam intensity required for the SF formation in the p-type films was ∼100 times higher than that in the n-type ones. The SFs reduced the minority-carrier lifetime in the p-type films, which was opposite to that observed inmore » the n-type case. The reason for the peculiar SF behavior in the p-type 4H-SiC is discussed with the cathodoluminescence results.« less
Hybrid inorganic-organic capsules for efficient intracellular delivery of novel siRNAs against influenza A (H1N1) virus infection.

PubMed

Timin, Alexander S; Muslimov, Albert R; Petrova, Aleksandra V; Lepik, Kirill V; Okilova, Maria V; Vasin, Andrey V; Afanasyev, Boris V; Sukhorukov, Gleb B

2017-03-07

The implementation of RNAi technology into the clinical practice has been significantly postponing due to the issues regarding to the delivery of naked siRNA predominantly to target cells. Here we report the approach to enhance the efficiency of siRNA delivery by encapsulating the siRNA into new carrier systems which are obtained via the combination of widely used layer-by-layer technique and in situ modification by sol-gel chemistry. We used three types of siRNAs (NP-717, NP-1155 and NP-1496) in encapsulated form as new therapeutic agents against H1N1 influenza virus infection. By employing the hybrid microcontainers for the siRNA encapsulation we demonstrate the reduction of viral nucleoprotein (NP) level and inhibition of influenza virus production in infected cell lines (MDCK and A549). The obtained hybrid carriers based on assembled biodegradable polyelectrolytes and sol-gel coating possess several advantages such as a high cell uptake efficiency, low toxicity, efficient intracellular delivery of siRNAs and the protection of siRNAs from premature degradation before reaching the target cells. These findings underpin a great potential of versatile microencapsulation technology for the development of anti-viral RNAi delivery systems against influenza virus infection.
Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

NASA Astrophysics Data System (ADS)

Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

2007-10-01

In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.
Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

PubMed Central

Molnar, Wolfgang; Wojcik, Tomasz; Pongratz, Peter; Auner, Norbert; Bauch, Christian; Bertagnolli, Emmerich

2012-01-01

Summary Perchlorinated polysilanes were synthesized by polymerization of tetrachlorosilane under cold plasma conditions with hydrogen as a reducing agent. Subsequent selective cleavage of the resulting polymer yielded oligochlorosilanes SinCl2 n +2 (n = 2, 3) from which the octachlorotrisilane (n = 3, Cl8Si3, OCTS) was used as a novel precursor for the synthesis of single-crystalline Si nanowires (NW) by the well-established vapor–liquid–solid (VLS) mechanism. By adding doping agents, specifically BBr3 and PCl3, we achieved highly p- and n-type doped Si-NWs by means of atmospheric-pressure chemical vapor deposition (APCVD). These as grown NWs were investigated by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM), as well as electrical measurements of the NWs integrated in four-terminal and back-gated MOSFET modules. The intrinsic NWs appeared to be highly crystalline, with a preferred growth direction of [111] and a specific resistivity of ρ = 6 kΩ·cm. The doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation. PMID:23019552
Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng

2014-09-28

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos,more » we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.« less
Surface plasmon effect in electrodeposited diamond-like carbon films for photovoltaic application

NASA Astrophysics Data System (ADS)

Ghosh, B.; Ray, Sekhar C.; Espinoza-González, Rodrigo; Villarroel, Roberto; Hevia, Samuel A.; Alvarez-Vega, Pedro

2018-04-01

Diamond-like carbon (DLC) films and nanocrystalline silver particles containing diamond-like carbon (DLC:Ag) films were electrodeposited on n-type silicon substrate (n-Si) to prepare n-Si/DLC and n-Si/DLC:Ag heterostructures for photovoltaic (PV) applications. Surface plasmon resonance (SPR) effect in this cell structure and its overall performance have been studied in terms of morphology, optical absorption, current-voltage characteristics, capacitance-voltage characteristics, band diagram and external quantum efficiency measurements. Localized surface plasmon resonance effect of silver nanoparticles (Ag NPs) in n-Si/DLC:Ag PV structure exhibited an enhancement of ∼28% in short circuit current density (JSC), which improved the overall efficiency of the heterostructures.
Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

PubMed Central

2013-01-01

SiOxNy films with a low nitrogen concentration (< 4%) have been prepared on Si substrates at 400°C by atmospheric-pressure plasma oxidation-nitridation process using O2 and N2 as gaseous precursors diluted in He. Interface properties of SiOxNy films have been investigated by analyzing high-frequency and quasistatic capacitance-voltage characteristics of metal-oxide-semiconductor capacitors. It is found that addition of N into the oxide increases both interface state density (Dit) and positive fixed charge density (Qf). After forming gas anneal, Dit decreases largely with decreasing N2/O2 flow ratio from 1 to 0.01 while the change of Qf is insignificant. These results suggest that low N2/O2 flow ratio is a key parameter to achieve a low Dit and relatively high Qf, which is effective for field effect passivation of n-type Si surfaces. PMID:23634872
Hollow waveguides with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films

NASA Astrophysics Data System (ADS)

Zhao, Y.; Jenkins, M.; Measor, P.; Leake, K.; Liu, S.; Schmidt, H.; Hawkins, A. R.

2011-02-01

A type of integrated hollow core waveguide with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films is demonstrated. Hollow core waveguides made with a combination of plasma-enhanced chemical vapor deposition SiO2 and sputtered Ta2O5 provide a nearly optimal structure for optofluidic biofluorescence measurements with low optical loss, high fabrication yield, and low background photoluminescence. Compared to earlier structures made using Si3N4, the photoluminescence background of Ta2O5 based hollow core waveguides is decreased by a factor of 10 and the signal-to-noise ratio for fluorescent nanobead detection is improved by a factor of 12.

The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

NASA Astrophysics Data System (ADS)

Hashemi, Adeleh; Bahari, Ali; Ghasemi, Shahram

2017-09-01

In this work, povidone/silica nanocomposite dielectric layers were deposited on the n-type Si (100) substrates for application in n-type silicon field-effect transistors (FET). Thermogravimetric analysis (TGA) indicated that strong chemical interactions between polymer and silica nanoparticles were created. In order to examine the effect of annealing temperatures on chemical interactions and nanostructure properties, annealing process was done at 423-513 K. Atomic force microscopy (AFM) images show the very smooth surfaces with very low surface roughness (0.038-0.088 nm). The Si2p and C1s core level photoemission spectra were deconvoluted to the chemical environments of Si and C atoms respectively. The obtained results of deconvoluted X-ray photoelectron spectroscopy (XPS) spectra revealed a high percentage of silanol hydrogen bonds in the sample which was not annealed. These bonds were inversed to stronger covalence bonds (siloxan bonds) at annealing temperature of 423 K. By further addition of temperature, siloxan bonds were shifted to lower binding energy of about 1 eV and their intensity were abated at annealing temperature of 513 K. The electrical characteristics were extracted from current-Voltage (I-V) and capacitance-voltage (C-V) measurements in metal-insulator-semiconductor (MIS) structure. The all n-type Si transistors showed very low threshold voltages (-0.24 to 1 V). The formation of the strongest cross-linking at nanostructure of dielectric film annealed at 423 K caused resulted in an un-trapped path for the transport of charge carriers yielding the lowest threshold voltage (0.08 V) and the highest electron mobility (45.01 cm2/V s) for its FET. By increasing the annealing temperature (473 and 513 K) on the nanocomposite dielectric films, the values of the average surface roughness, the capacitance and the FET threshold voltage increased and the value of FET electron field-effect mobility decreased.
High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

NASA Astrophysics Data System (ADS)

Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

2015-06-01

Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation <4% in the electrical resistance of batches of ten pellets of both types was indicative of high reproducibility. A silver-paste-based brazing technique was used to assemble the TE elements into modules. This assembly technique afforded low and repeatable electrical contact resistance (<3 nΩ m2). A test bench was developed for measuring the performance of TE modules at high temperatures (up to 600°C), and thirty 20 mm × 20 mm TE modules were produced and tested. The results revealed the performance was reproducible, with power output reaching 1.9 ± 0.2 W for a 370 degree temperature difference. When the temperature difference was increased to 500°C, electrical power output increased to >3.6 W. An air-water heat exchanger was developed and 30 TE modules were clamped and connected electrically. The TEG was tested under vacuum on a hot-air test bench. The measured output power was 45 W for an air flow of 16 g/s at 750°C. The hot surface of the TE module reached 550°C under these conditions. Silicon-germanium TE modules can survive such temperatures, in contrast with commercial modules based on bismuth telluride, which are limited to 400°C.
First principles investigation of SiC/AlGaN(0001) band offset

NASA Astrophysics Data System (ADS)

Kojima, E.; Endo, K.; Shirakawa, H.; Chokawa, K.; Araidai, M.; Ebihara, Y.; Kanemura, T.; Onda, S.; Shiraishi, K.

2017-06-01

We are attempting to develop a new type of vertical MOSFET with SiC/AlGaN heterojunction. Toward the realization of the vertical MOSFET, the control of conduction-band offset is one of the crucial subjects. We investigated the conduction-band offset of 4H-SiC/AlxGa1-xN interface by the first-principles electronic structure calculations. We found that the offset of the interface with 40% Al content becomes almost zero. Therefore, 4H-SiC/Al0.4Ga0.6N interface is one of the most promising candidates for the vertical MOSFET in future power conversion devices.
Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

NASA Astrophysics Data System (ADS)

Feng, Liang; Ping, Chen; De-Gang, Zhao; De-Sheng, Jiang; Zhi-Juan, Zhao; Zong-Shun, Liu; Jian-Jun, Zhu; Jing, Yang; Wei, Liu; Xiao-Guang, He; Xiao-Jing, Li; Xiang, Li; Shuang-Tao, Liu; Hui, Yang; Li-Qun, Zhang; Jian-Ping, Liu; Yuan-Tao, Zhang; Guo-Tong, Du

2016-05-01

We have investigated the electron affinity of Si-doped AlN films (N Si = 1.0 × 1018-1.0 × 1019 cm-3) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).
Transport properties of Sb-doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Philipose, U.

2012-08-01

We present a safe and cost-effective approach for synthesis of n-type Sb-doped Si nanowires. The nanowires were synthesized at ambient pressure using SiCl4 as Si source and pure Sb as the dopant source. Structural and compositional characterization using electron microscopy and X-ray spectroscopy show crystalline nanowires with lengths of 30-40 μm and diameters of 40-100 nm. A 3-4 nm thick amorphous oxide shell covers the surface of the nanowire, post-growth. The composition of this shell was confirmed by Raman spectroscopy. Growth of Si nanowires, followed by low temperature annealing in Sb vapor, was shown to be an effective technique for synthesizing Sb-doped Si nanowires. The doping concentration of Sb was found to be dependent on temperature, with Sb re-evaporating from the Si nanowire at higher doping temperatures. Field effect transistors (FETs) were fabricated to investigate the electrical transport properties of these nanowires. The as-grown Si nanowires were found to be p-type with a channel mobility of 40 cm2 V-1 s-1. After doping with Sb, these nanowires exhibited n-type behavior. The channel mobility and carrier concentration of the Sb-doped Si nanowires were estimated to be 288 cm2 V-1 s-1 and 5.3×1018 cm-3 respectively.
Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs

NASA Astrophysics Data System (ADS)

Debehets, J.; Homm, P.; Menghini, M.; Chambers, S. A.; Marchiori, C.; Heyns, M.; Locquet, J. P.; Seo, J. W.

2018-05-01

In this paper, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate analyzer and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-levels. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-level pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH4)2S-solutions in an inert atmosphere (N2-gas). Although the (NH4)2S-cleaning in N2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH4)2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs.
Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

NASA Astrophysics Data System (ADS)

Rahmouni, M.; Datta, A.; Chatterjee, P.; Damon-Lacoste, J.; Ballif, C.; Roca i Cabarrocas, P.

2010-03-01

Heterojunction with intrinsic thin layer or "HIT" solar cells are considered favorable for large-scale manufacturing of solar modules, as they combine the high efficiency of crystalline silicon (c-Si) solar cells, with the low cost of amorphous silicon technology. In this article, based on experimental data published by Sanyo, we simulate the performance of a series of HIT cells on N-type crystalline silicon substrates with hydrogenated amorphous silicon (a-Si:H) emitter layers, to gain insight into carrier transport and the general functioning of these devices. Both single and double HIT structures are modeled, beginning with the initial Sanyo cells having low open circuit voltages but high fill factors, right up to double HIT cells exhibiting record values for both parameters. The one-dimensional numerical modeling program "Amorphous Semiconductor Device Modeling Program" has been used for this purpose. We show that the simulations can correctly reproduce the electrical characteristics and temperature dependence for a set of devices with varying I-layer thickness. Under standard AM1.5 illumination, we show that the transport is dominated by the diffusion mechanism, similar to conventional P/N homojunction solar cells, and tunneling is not required to describe the performance of state-of-the art devices. Also modeling has been used to study the sensitivity of N-c-Si HIT solar cell performance to various parameters. We find that the solar cell output is particularly sensitive to the defect states on the surface of the c-Si wafer facing the emitter, to the indium tin oxide/P-a-Si:H front contact barrier height and to the band gap and activation energy of the P-a-Si:H emitter, while the I-a-Si:H layer is necessary to achieve both high Voc and fill factor, as it passivates the defects on the surface of the c-Si wafer. Finally, we describe in detail for most parameters how they affect current transport and cell properties.
Synthesis and photoelectrochemical properties of a novel CuO/ZnO nanorod photocathode for solar hydrogen generation

NASA Astrophysics Data System (ADS)

Shaislamov, Ulugbek; Lee, Heon-Ju

2016-10-01

Here, we present a facile synthesis method and photoelectrochemical characterizations of a p-type CuO-nanorod array photoelectrode with ZnO nanorod branches. Vertically-aligned CuO nanorods were synthesized by using direct oxidation of metallic Cu nanorods grown on a Cu substrate by using a facile template-assisted electrodeposition method. The formed CuONR/ZnONB hierarchically-structured photoelectrode exhibited remarkable photoelectrodechemical performance and outstanding stability compared to the CuO NR photoelectrode without ZnO NR branches. Morphological, optical and electrochemical characterizations were carried out in order to examine the effects of ZnO nanorod branches on the stability and the overall electrochemical performance of the electrode.
Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

PubMed

Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

2016-02-05

We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.
Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balsano, Robert; Matsubayashi, Akitomo; LaBella, Vincent P., E-mail: vlabella@albany.edu

2013-11-15

The Schottky barrier heights of both n and p doped Cu/Si(001), Ag/Si(001), and Au/Si(001) diodes were measured using ballistic electron emission microscopy and ballistic hole emission microscopy (BHEM), respectively. Measurements using both forward and reverse ballistic electron emission microscopy (BEEM) and (BHEM) injection conditions were performed. The Schottky barrier heights were found by fitting to a linearization of the power law form of the Bell-Kaiser BEEM model. The sum of the n-type and p-type barrier heights are in good agreement with the band gap of silicon and independent of the metal utilized. The Schottky barrier heights are found to bemore » below the region of best fit for the power law form of the BK model, demonstrating its region of validity.« less
Photocurrent Enhancement by a Rapid Thermal Treatment of Nanodisk-Shaped SnS Photocathodes.

PubMed

Patel, Malkeshkumar; Kumar, Mohit; Kim, Joondong; Kim, Yu Kwon

2017-12-21

Photocathodes made from the earth-abundant, ecofriendly mineral tin monosulfide (SnS) can be promising candidates for p/n-type photoelectrochemical cells because they meet the strict requirements of energy band edges for each individual photoelectrode. Herein we fabricated SnS-based cell that exhibited a prolonged photocurrent for 3 h at -0.3 V vs the reversible hydrogen electrode (RHE) in a 0.1 M HCl electrolyte. An enhancement of the cathodic photocurrent from 2 to 6 mA cm -2 is observed through a rapid thermal treatment. Mott-Schottky analysis of SnS samples revealed an anodic shift of 0.7 V in the flat band potential under light illumination. Incident photon-to-current conversion efficiency (IPCE) analysis indicates that an efficient charge transfer appropriate for solar hydrogen generation occurs at the -0.3 V vs RHE potential. This work shows that SnS is a promising material for photocathode in PEC cells and its performance can be enhanced via simple postannealing.
Band gaps and photocurrent responses of two novel alkaline earth metal(II) complexes based on 4,5-di(4‧-carboxylphenyl)benzene

NASA Astrophysics Data System (ADS)

Meng, Jiang Ping; Yan, Zhi Shuo; Long, Ji Ying; Gong, Yun; Lin, Jian Hua

2017-01-01

By using a rigid dicarboxylate ligand, 4,5-di(4‧-carboxylphenyl)benzene (H2L), two complexes formulated as SrL(DMF)(H2O)·(CH3CN) (DMF=N,N‧-dimethylformamide) (1) and BaL(H2O)2 (2) were solvothermally synthesized and structurally characterized by single-crystal X-ray diffraction. Complexes 1 and 2 display two-dimensional (2D) layer structures. The two complexes exhibit different electrochemical and photoelectrochemical properties. Their thermal stabilities, cyclic voltammograms, UV-vis absorption and diffuse reflectance spectra and photoluminescence properties have been investigated. The band structures, the total density of states (TDOS) and partial density of states (PDOS) of the two complexes were calculated by CASTEP program. Complex 2 exhibits much higher photocurrent density than complex 1. The Mott-Schottky plots reveal that complexes 1 and 2 both are p-type semiconductors, which are in agreement with their band structure calculations.
N-VSi-related center in non-irradiated 6H SiC nanostructure

NASA Astrophysics Data System (ADS)

Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii; Kalabukhova, Ekaterina; Klyachkin, Leonid; Malyarenko, Anna; Savchenko, Dariya; Shanina, Bella

2014-02-01

We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the 14N nucleus allow us to attribute this triplet center to the N-VSi defect.
Chemical Stability of the Fiber Coating/Matrix Interface in Silicon-Based Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Lee, Kang N.; Jacobson, Nathan S.

1995-01-01

Carbon and boron nitride are used as fiber coatings in silicon-based composites. In order to assess the long-term stability of these materials, reactions of carbon/Si3N4 and BN/SiC were studied at high temperatures with Knudsen effusion, coupon tests, and microstructural examination. In the carbon/Si3N4 system, carbon reacted with Si3N4 to form gaseous N2 and SiC. The formation of SiC limited further reaction by physically separating the carbon and Si3N4. Consequently, the development of high p(N2) at the interface, predicted from thermochemical calculations, did not occur, thus limiting the potential deleterious effects of the reaction on the composite. Strong indications of a reaction between BN and SiC were shown by TEM and SIMS analysis of the BN/SiC interface. In long-term exposures, this reaction can lead to a depletion of a BN coating and/or an unfavorable change of the interfacial properties, limiting the beneficial effects of the coating.
[siRNAs with high specificity to the target: a systematic design by CRM algorithm].

PubMed

Alsheddi, T; Vasin, L; Meduri, R; Randhawa, M; Glazko, G; Baranova, A

2008-01-01

'Off-target' silencing effect hinders the development of siRNA-based therapeutic and research applications. Common solution to this problem is an employment of the BLAST that may miss significant alignments or an exhaustive Smith-Waterman algorithm that is very time-consuming. We have developed a Comprehensive Redundancy Minimizer (CRM) approach for mapping all unique sequences ("targets") 9-to-15 nt in size within large sets of sequences (e.g. transcriptomes). CRM outputs a list of potential siRNA candidates for every transcript of the particular species. These candidates could be further analyzed by traditional "set-of-rules" types of siRNA designing tools. For human, 91% of transcripts are covered by candidate siRNAs with kernel targets of N = 15. We tested our approach on the collection of previously described experimentally assessed siRNAs and found that the correlation between efficacy and presence in CRM-approved set is significant (r = 0.215, p-value = 0.0001). An interactive database that contains a precompiled set of all human siRNA candidates with minimized redundancy is available at http://129.174.194.243. Application of the CRM-based filtering minimizes potential "off-target" silencing effects and could improve routine siRNA applications.
Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode

DOEpatents

Menon, Madhu; Sheetz, Michael; Sunkara, Mahendra Kumar; Pendyala, Chandrashekhar; Sunkara, Swathi; Jasinski, Jacek B.

2017-09-05

The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.
Further Studies on the Effect of SiN x Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oh, Jaewon; Dauksher, Bill; Bowden, Stuart

We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiN x refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-smore » was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 x 10 21 cm -3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). In conclusion, the emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.« less
Further Studies on the Effect of SiN x Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation

DOE PAGES

Oh, Jaewon; Dauksher, Bill; Bowden, Stuart; ...

2017-01-11

We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiN x refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-smore » was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 x 10 21 cm -3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). In conclusion, the emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.« less
Using reduced graphene oxide-Ca:CdSe nanocomposite to enhance photoelectrochemical activity of gold nanoparticles functionalized tungsten oxide for highly sensitive prostate specific antigen detection.

PubMed

Wang, Xueping; Xu, Rui; Sun, Xu; Wang, Yaoguang; Ren, Xiang; Du, Bin; Wu, Dan; Wei, Qin

2017-10-15

An ultrasensitive sandwich-type photoelectrochemical (PEC) immunosensor was constructed for the detection of prostate specific antigen (PSA). In this work, Au-nanoparticle-loaded tungsten oxide (WO 3 -Au) hybrid composites was applied as PEC sensing platform, while Ca ions doped CdSe equipped on the conducting framework of reduced graphene oxide (rGO-Ca:CdSe) nanocomposites were employed as the signal amplification probe. As for WO 3 -Au, massive Au nanoparticles were formed on the surface of WO 3 without any additional reducing agent, providing a novel nanocarriers for anchoring plenty of the primary antibodies due to the large specific surface area and good biocompatibility by chemical bonding between Au nanoparticles and -NH 2 of antibodies. Besides, the incorporation of the rGO and the doping of Ca ions could improve the conductivity and hinder the recombination of electron-hole pairs of CdSe nanoparticles effectively, thereby enhancing the photocurrent conversion efficiency. Based on the sandwich immunoreaction, the primary antibody was immobilized onto WO 3 -Au substrate, after the formed rGO-Ca:CdSe labels were captured onto the electrode surface via the specific antibody-antigen interaction, the photocurrent intensity could be further enhanced due to the sensitization effect. Under the optimal conditions, the proposed PEC immunosensor shows a linear relationship between photocurrent variation and the logarithm of PSA concentration in the wide range of 5pgmL -1 to 50ngmL -1 with a low detection limit of 2.6pgmL -1 (S/N=3). Moreover, it also presented good stability and acceptable specificity, indicating the potential applications in clinical diagnostics. Copyright © 2017 Elsevier B.V. All rights reserved.
Precise and selective sensing of DNA-DNA hybridization by graphene/Si-nanowires diode-type biosensors.

PubMed

Kim, Jungkil; Park, Shin-Young; Kim, Sung; Lee, Dae Hun; Kim, Ju Hwan; Kim, Jong Min; Kang, Hee; Han, Joong-Soo; Park, Jun Woo; Lee, Hosun; Choi, Suk-Ho

2016-08-18

Single-Si-nanowire (NW)-based DNA sensors have been recently developed, but their sensitivity is very limited because of high noise signals, originating from small source-drain current of the single Si NW. Here, we demonstrate that chemical-vapor-deposition-grown large-scale graphene/surface-modified vertical-Si-NW-arrays junctions can be utilized as diode-type biosensors for highly-sensitive and -selective detection of specific oligonucleotides. For this, a twenty-seven-base-long synthetic oligonucleotide, which is a fragment of human DENND2D promoter sequence, is first decorated as a probe on the surface of vertical Si-NW arrays, and then the complementary oligonucleotide is hybridized to the probe. This hybridization gives rise to a doping effect on the surface of Si NWs, resulting in the increase of the current in the biosensor. The current of the biosensor increases from 19 to 120% as the concentration of the target DNA varies from 0.1 to 500 nM. In contrast, such biosensing does not come into play by the use of the oligonucleotide with incompatible or mismatched sequences. Similar results are observed from photoluminescence microscopic images and spectra. The biosensors show very-uniform current changes with standard deviations ranging ~1 to ~10% by ten-times endurance tests. These results are very promising for their applications in accurate, selective, and stable biosensing.

Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bagraev, N. T., E-mail: Impurity.Dipole@mail.ioffe.ru; Danilovskii, E. Yu.; Gets, D. S.

2015-05-15

We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC(0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S = 1. The samemore » triplet center that is characterized by the large value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (HF) lines in the ESR and EDESR spectra originating from the HF interaction with the {sup 14}N nucleus seem to attribute this triplet center to the N-V{sub Si} defect.« less
Coronal Mass Ejection-driven Shocks and the Associated Sudden Commencements-sudden Impulses

NASA Technical Reports Server (NTRS)

Veenadhari, B.; Selvakumaran, R.; Singh, Rajesh; Maurya, Ajeet K.; Gopalswamy, N.; Kumar, Sushil; Kikuchi, T.

2012-01-01

Interplanetary (IP) shocks are mainly responsible for the sudden compression of the magnetosphere, causing storm sudden commencement (SC) and sudden impulses (SIs) which are detected by ground-based magnetometers. On the basis of the list of 222 IP shocks compiled by Gopalswamy et al., we have investigated the dependence of SC/SIs amplitudes on the speed of the coronal mass ejections (CMEs) that drive the shocks near the Sun as well as in the interplanetary medium. We find that about 91% of the IP shocks were associated with SC/SIs. The average speed of the SC/SI-associated CMEs is 1015 km/s, which is almost a factor of 2 higher than the general CME speed. When the shocks were grouped according to their ability to produce type II radio burst in the interplanetary medium, we find that the radio-loud (RL) shocks produce a much larger SC/SI amplitude (average approx. 32 nT) compared to the radio-quiet (RQ) shocks (average approx. 19 nT). Clearly, RL shocks are more effective in producing SC/SIs than the RQ shocks. We also divided the IP shocks according to the type of IP counterpart of interplanetary CMEs (ICMEs): magnetic clouds (MCs) and nonmagnetic clouds. We find that the MC-associated shock speeds are better correlated with SC/SI amplitudes than those associated with non-MC ejecta. The SC/SI amplitudes are also higher for MCs than ejecta. Our results show that RL and RQ type of shocks are important parameters in producing the SC/SI amplitude.
Diffusive and inelastic scattering in ballistic-electron-emission spectroscopy and ballistic-electron-emission microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, E.Y.; Turner, B.R.; Schowalter, L.J.

1993-07-01

Ballistic-electron-emission microscopy (BEEM) of Au/Si(001) n type was done to study whether elastic scattering in the Au overlayer is dominant. It was found that there is no dependence of the BEEM current on the relative gradient of the Au surface with respect to the Si interface, and this demonstrates that significant elastic scattering must occur in the Au overlayer. Ballistic-electron-emission spectroscopy (BEES) was also done, and, rather than using the conventional direct-current BEES, alternating-current (ac) BEES was done on Au/Si and also on Au/PtSi/Si(001) n type. The technique of ac BEES was found to give linear threshold for the Schottkymore » barrier, and it also clearly showed the onset of electron-hole pair creation and other inelastic scattering events. The study of device quality PtSi in Au/PtSi/Si(001) yielded an attenuation length of 4 nm for electrons of energy 1 eV above the PtSi Fermi energy. 20 refs., 5 figs.« less
Synthesis and Materials Design for Heteroanion Compounds

NASA Astrophysics Data System (ADS)

Machida, K.

2011-02-01

Oxynitride phosphors, SrSi2O2N2:Eu2+ were synthesized through a conventional solid state reaction between Sr2SiO4:Eu2+ precursor and Si3N4 by using NH4Cl flux, and their luminescence properties were characterized from a viewpoint of the ionic and covalent bond natures as the "heteroanion compound" containing O2- and N3- anions. The structural framework of host lattice is constructed by covalently bonded layers of SiON3 units, suggesting that the rearrangement of O2- and N3- anions effectively takes place between isolated SiO44-anions of the Sr2SiO4:Eu2+ precursor and SiN4 units of the Si3N4 raw material. Furthermore, the layered structure consisting of (Si2O2N2)n2n- polyanions as tightly connected by Si-N-Si covalent bonds depresses the lattice vibration of Sr(Eu)-O or Si-O bond, so that the temperature quenching effect is lowered to give the intense emission for LED-based illumination lamps.
Hydridosilylamido complexes of Ta and Mo isolobal with Berry's zirconocenes: syntheses, β-Si-H agostic interactions, catalytic hydrosilylation, and insight into mechanism.

PubMed

McLeod, Nicolas A; Kuzmina, Lyudmila G; Korobkov, Ilia; Howard, Judith A K; Nikonov, Georgii I

2016-02-14

The syntheses of novel Group 5 and Group 6 hydrosilylamido complexes of the type R(ArN[double bond, length as m-dash])M{N((t)Bu)SiMe2-H}X (M = Ta, R = Cp; M = Mo, R = ArN; X = Cl, H, OBn, Me) are described. The various substituents in the X position seem to play the key role in determining the extent of β-agostic interaction with the Si-H bond. The Mo agostic hydrido complex (ArN[double bond, length as m-dash])2Mo{η(3)-N((t)Bu)SiMe2-H}H is a pre-catalyst for the hydrosilylation of carbonyls. The stoichiometric reaction between benzaldehyde and (ArN[double bond, length as m-dash])2Mo{η(3)-N((t)Bu)SiMe2-H}H gives the benzoxy complex (ArN[double bond, length as m-dash])2Mo{N((t)Bu)SiMe2-H}(OBn), which showed a similar catalytic reactivity compared to the parent hydride. Mechanistic studies suggest that a non-hydride mechanism is operative.
Probing the structural flexibility of MOFs by constructing metal oxide@MOF-based heterostructures for size-selective photoelectrochemical response

NASA Astrophysics Data System (ADS)

Zhan, Wenwen; He, Yue; Guo, Jiangbin; Chen, Luning; Kong, Xiangjian; Zhao, Haixia; Kuang, Qin; Xie, Zhaoxiong; Zheng, Lansun

2016-07-01

It is becoming a challenge to achieve simpler characterization and wider application of flexible metal organic frameworks (MOFs) exhibiting the gate-opening or breathing behavior. Herein, we designed an intelligent MOF-based system where the gate-opening or breathing behavior of MOFs can be facially visualized in solution. Two types of metal oxide@MOF core-shell heterostructures, ZnO@ZIF-7 and ZnO@ZIF-71, were prepared using ZnO nanorods as self-sacrificial templates. The structural flexibility of both the MOFs can be easily judged from the distinct molecular-size-related formation modes and photoelectrochemical performances between the two ZnO@ZIF heterostructures. Moreover, the rotational dynamics of the flexible parts of ZIF-7 were studied by analyzing the intrinsic physical properties, such as dielectric constants, of the structure. The present work reminds us to pay particular attention to the influences of the structural flexibility of MOFs on the structure and properties of MOF-involved heterostructures in future studies.It is becoming a challenge to achieve simpler characterization and wider application of flexible metal organic frameworks (MOFs) exhibiting the gate-opening or breathing behavior. Herein, we designed an intelligent MOF-based system where the gate-opening or breathing behavior of MOFs can be facially visualized in solution. Two types of metal oxide@MOF core-shell heterostructures, ZnO@ZIF-7 and ZnO@ZIF-71, were prepared using ZnO nanorods as self-sacrificial templates. The structural flexibility of both the MOFs can be easily judged from the distinct molecular-size-related formation modes and photoelectrochemical performances between the two ZnO@ZIF heterostructures. Moreover, the rotational dynamics of the flexible parts of ZIF-7 were studied by analyzing the intrinsic physical properties, such as dielectric constants, of the structure. The present work reminds us to pay particular attention to the influences of the structural flexibility of MOFs on the structure and properties of MOF-involved heterostructures in future studies. Electronic supplementary information (ESI) available: Experimental details, XRD patterns and SEM images of products in other reactions, concentration-dependent photocurrent responses, and supplementary data of dielectric measurements. See DOI: 10.1039/c6nr02257j
Ab initio modeling of vacancies, antisites, and Si dopants in ordered InGaAs

NASA Astrophysics Data System (ADS)

Wang, Jingyang; Lukose, Binit; Thompson, Michael O.; Clancy, Paulette

2017-01-01

In0.53Ga0.47As, a III-V compound semiconductor with high electron mobility, is expected to bring better performance than silicon in next-generation n-type MOSFET devices. However, one major challenge to its wide scale adoption is the difficulty of obtaining high enough dopant activation. For Si-doped InGaAs, the best current experimental result, involving 10 min of furnace annealing at temperatures above 700 °C, yields a free electron concentration of 1.4 ×1019 cm-3, a value that still falls short of requirement for practical applications. In this paper, we investigate the origin of low dopant activation in InGaAs by calculating formation energies for a wide variety of single point defects (Si substutionals, Si tetrahedral interstitials, vacancies, and antisites) in Si-doped In0.5Ga0.5As in a CuAu-I type crystal structure. We find that (1) a high electron concentration can only be achieved under In/Ga-poor growth conditions, while As-poor conditions inhibit n-type doping; and (2) in heavily n-doped samples, cation vacancies VIn/Ga-3 contribute the most to the compensation of excess Si donors via the Si III - VIII mechanism (III = In/Ga), thus becoming the limiting factor to higher dopant activation. Under the most favorable growth conditions for n-doping, we find the maximum carrier concentration to be 5.2 ×1018 cm-3 under thermal equilibrium, within an order of magnitude of the best experimental value.
Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using Infrared Reflectance Spectroscopy

NASA Astrophysics Data System (ADS)

Narita, Katsutoshi; Hijikata, Yasuto; Yaguchi, Hiroyuki; Yoshida, Sadafumi; Nakashima, Shinichi

2004-08-01

We have estimated the free-carrier concentration and drift mobility in n-type 6H-SiC wafers in the carrier concentration range of 1017-1019 cm-3 from far- and mid-infrared (30-2000 cm-1) reflectance spectra obtained at room temperature. A modified classical dielectric function model was employed for the analysis. We found good agreement between the electrical properties derived from infrared reflectance spectroscopy and those derived from Hall effect measurements. We have demonstrated the spatial mapping of carrier concentration and mobility for commercially produced 2 inch SiC wafers.
Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment.

PubMed

Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

2018-06-15

An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (10 19 cm -3 ) are distributed in the initial state, which exist in the forms of Si 2 N≡Si·, SiO 2 ≡Si·, O 3 ≡Si·, and N 3 ≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H + and O 2- . Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.
Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment

NASA Astrophysics Data System (ADS)

Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

2018-06-01

An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (1019 cm‑3) are distributed in the initial state, which exist in the forms of Si2N≡Si·, SiO2≡Si·, O3≡Si·, and N3≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H+ and O2‑. Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.
Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

NASA Astrophysics Data System (ADS)

Sun, Yi; Zhou, Kun; Sun, Qian; Liu, Jianping; Feng, Meixin; Li, Zengcheng; Zhou, Yu; Zhang, Liqun; Li, Deyao; Zhang, Shuming; Ikeda, Masao; Liu, Sheng; Yang, Hui

2016-09-01

Silicon photonics would greatly benefit from efficient, visible on-chip light sources that are electrically driven at room temperature. To fully utilize the benefits of large-scale, low-cost manufacturing foundries, it is highly desirable to grow direct bandgap III-V semiconductor lasers directly on Si. Here, we report the demonstration of a blue-violet (413 nm) InGaN-based laser diode grown directly on Si that operates under continuous-wave current injection at room temperature, with a threshold current density of 4.7 kA cm-2. The heteroepitaxial growth of GaN on Si is confronted with a large mismatch in both the lattice constant and the coefficient of thermal expansion, often resulting in a high density of defects and even microcrack networks. By inserting an Al-composition step-graded AlN/AlGaN multilayer buffer between the Si and GaN, we have not only successfully eliminated crack formation, but also effectively reduced the dislocation density. The result is the realization of a blue-violet InGaN-based laser on Si.
Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szyszka, A., E-mail: szyszka@ihp-microelectronics.com, E-mail: adam.szyszka@pwr.wroc.pl; Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw; Lupina, L.

2014-08-28

Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. Asmore » revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.« less
Si

NASA Astrophysics Data System (ADS)

Fiameni, S.; Famengo, A.; Agresti, F.; Boldrini, S.; Battiston, S.; Saleemi, M.; Johnsson, M.; Toprak, M. S.; Fabrizio, M.

2014-06-01

Magnesium silicide (Mg2Si)-based alloys are promising candidates for thermoelectric (TE) energy conversion in the middle-high temperature range. The detrimental effect of the presence of MgO on the TE properties of Mg2Si based materials is widely known. For this reason, the conditions used for synthesis and sintering were optimized to limit oxygen contamination. The effect of Bi doping on the TE performance of dense Mg2Si materials was also investigated. Synthesis was performed by ball milling in an inert atmosphere starting from commercial Mg2Si powder and Bi powder. The samples were consolidated, by spark plasma sintering, to a density >95%. The morphology, and the composition and crystal structure of samples were characterized by field-emission scanning electronic microscopy and x-ray diffraction, respectively. Moreover, determination of Seebeck coefficients and measurement of electrical and thermal conductivity were performed for all the samples. Mg2Si with 0.1 mol% Bi doping had a ZT value of 0.81, indicative of the potential of this method for fabrication of n-type bulk material with good TE performance.
Palladium silicide formation under the influence of nitrogen and oxygen impurities

NASA Technical Reports Server (NTRS)

Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

1985-01-01

The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.
The spin relaxation of nitrogen donors in 6H SiC crystals as studied by the electron spin echo method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savchenko, D., E-mail: dariyasavchenko@gmail.com; National Technical University of Ukraine “Kyiv Polytechnic Institute,” Kyiv 03056; Shanina, B.

2016-04-07

We present the detailed study of the spin kinetics of the nitrogen (N) donor electrons in 6H SiC wafers grown by the Lely method and by the sublimation “sandwich method” (SSM) with a donor concentration of about 10{sup 17 }cm{sup −3} at T = 10–40 K. The donor electrons of the N donors substituting quasi-cubic “k1” and “k2” sites (N{sub k1,k2}) in both types of the samples revealed the similar temperature dependence of the spin-lattice relaxation rate (T{sub 1}{sup −1}), which was described by the direct one-phonon and two-phonon processes induced by the acoustic phonons proportional to T and to T{sup 9}, respectively. Themore » character of the temperature dependence of the T{sub 1}{sup −1} for the donor electrons of N substituting hexagonal (“h”) site (N{sub h}) in both types of 6H SiC samples indicates that the donor electrons relax through the fast-relaxing centers by means of the cross-relaxation process. The observed enhancement of the phase memory relaxation rate (T{sub m}{sup −1}) with the temperature increase for the N{sub h} donors in both types of the samples, as well as for the N{sub k1,k2} donors in Lely grown 6H SiC, was explained by the growth of the free electron concentration with the temperature increase and their exchange scattering at the N donor centers. The observed significant shortening of the phase memory relaxation time T{sub m} for the N{sub k1,k2} donors in the SSM grown sample with the temperature lowering is caused by hopping motion of the electrons between the occupied and unoccupied states of the N donors at N{sub h} and N{sub k1,k2} sites. The impact of the N donor pairs, triads, distant donor pairs formed in n-type 6H SiC wafers on the spin relaxation times was discussed.« less
Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2017-01-01

The conduction mechanism(s) of gate leakage current JG through thermally grown silicon dioxide (SiO2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been studied in detail under positive gate bias. It was observed that at an oxide field above 5 MV/cm, the leakage current measured up to 303 °C can be explained by Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps located at ≈2.5 eV below the SiO2 conduction band. However, the PF emission current IPF dominates the FN electron tunneling current IFN at oxide electric fields Eox between 5 and 10 MV/cm and in the temperature ranging from 31 to 303 °C. In addition, we have presented a comprehensive analysis of injection of holes and their subsequent trapping into as-grown oxide traps eventually leading to time-dependent dielectric breakdown during electron injection under positive bias temperature stress (PBTS) in n-4H-SiC metal-oxide-silicon carbide structures. Holes were generated in the heavily doped n-type polycrystalline silicon (n+-polySi) gate (anode) as well as in the oxide bulk via band-to-band ionization by the hot-electrons depending on their energy and SiO2 film thickness at Eox between 6 and 10 MV/cm (prior to the intrinsic oxide breakdown field). Transport of hot electrons emitted via both FN and PF mechanisms was taken into account. On the premise of the hole-induced oxide breakdown model, the time- and charge-to-breakdown ( tBD and QBD ) of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC were estimated at a wide range of temperatures. tBD follows the Arrhenius law with activation energies varying inversely with initial applied constant field Eox supporting the reciprocal field ( 1 /E ) model of breakdown irrespective of SiO2 film thicknesses. We obtained an excellent margin (6.66 to 6.33 MV/cm at 31 °C and 5.11 to 4.55 MV/cm at 303 °C) of normal operating field for a 10-year projected lifetime of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC under positive bias on the n+-polySi gate. Furthermore, the projected maximum operating oxide field was little higher in metal gate devices compared to n+-polySi gate devices having an identically thick thermal SiO2 films under PBTS.
Coralloid-like Nanostructured c-nSi/SiOx@Cy Anodes for High Performance Lithium Ion Battery.

PubMed

Zhuang, Xianhuan; Song, Pingan; Chen, Guorong; Shi, Liyi; Wu, Yuan; Tao, Xinyong; Liu, Hongjiang; Zhang, Dengsong

2017-08-30

Balancing the size of the primary Si unit and void space is considered to be an effective approach for developing high performance silicon-based anode materials and is vital to create a lithium ion battery with high energy density. We herein have demonstrated the facile fabrication of coralloid-like nanostructured silicon composites (c-nSi/SiO x @Cy) via sulfuric acid etching the Al 60 Si 40 alloy, followed by a surface growth carbon layer approach. The HRTEM images of pristine and cycled c-nSi/SiO x @Cy show that abundant nanoscale internal pores and the continuous conductive carbon layer effectively avoid the pulverization and agglomeration of Si units during multiple cycles. It is interesting that the c-nSi/SiO x @C 4.0 anode exhibits a high initial Coulombic efficiency of 85.53%, and typical specific capacity of over 850 mAh g -1 after deep 500 cycles at a current density of 1 A g -1 . This work offers a facile strategy to create silicon-based anodes consisting of highly dispersed primary nano-Si units.
Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications.

PubMed

Ehsan, Muhammad Ali; Peiris, T A Nirmal; Wijayantha, K G Upul; Olmstead, Marilyn M; Arifin, Zainudin; Mazhar, Muhammad; Lo, K M; McKee, Vickie

2013-08-14

Symmetrical and unsymmetrical dithiocarbamato pyridine solvated and non-solvated complexes of indium(III) with the general formula [In(S2CNRR')3]·n(py) [where py = pyridine; R,R' = Cy, n = 2 (1); R,R' = (i)Pr, n = 1.5 (2); NRR' = Pip, n = 0.5 (3) and R = Bz, R' = Me, n = 0 (4)] have been synthesized. The compositions, structures and properties of these complexes have been studied by means of microanalysis, IR and (1)H-NMR spectroscopy, X-ray single crystal and thermogravimetric (TG/DTG) analyses. The applicability of these complexes as single source precursors (SSPs) for the deposition of β-In2S3 thin films on fluorine-doped SnO2 (FTO) coated conducting glass substrates by aerosol-assisted chemical vapour deposition (AACVD) at temperatures of 300, 350 and 400 °C is studied. All films have been characterized by powder X-ray diffraction (PXRD) and energy dispersive X-ray analysis (EDX) for the detection of phase and stoichiometry of the deposit. Scanning electron microscopy (SEM) studies reveal that precursors (1)-(4), irrespective of different metal ligand design, generate comparable morphologies of β-In2S3 thin films at different temperatures. Direct band gap energies of 2.2 eV have been estimated from the UV-vis spectroscopy for the β-In2S3 films fabricated from precursors (1) and (4). The photoelectrochemical (PEC) properties of β-In2S3 were confirmed by recording the current-voltage plots under light and dark conditions. The plots showed anodic photocurrent densities of 1.25 and 0.65 mA cm(-2) at 0.23 V vs. Ag/AgCl for the β-In2S3 films made at 400 and 350 °C from the precursors (1) and (4), respectively. The photoelectrochemical performance indicates that the newly synthesised precursors are highly useful in fabricating β-In2S3 electrodes for solar energy harvesting and optoelectronic application.
Growth of p-type hematite by atomic layer deposition and its utilization for improved solar water splitting.

PubMed

Lin, Yongjing; Xu, Yang; Mayer, Matthew T; Simpson, Zachary I; McMahon, Gregory; Zhou, Sa; Wang, Dunwei

2012-03-28

Mg-doped hematite (α-Fe(2)O(3)) was synthesized by atomic layer deposition (ALD). The resulting material was identified as p-type with a hole concentration of ca. 1.7 × 10(15) cm(-3). When grown on n-type hematite, the p-type layer was found to create a built-in field that could be used to assist photoelectrochemical water splitting reactions. A nominal 200 mV turn-on voltage shift toward the cathodic direction was measured, which is comparable to what has been measured using water oxidation catalysts. This result suggests that it is possible to achieve desired energetics for solar water splitting directly on metal oxides through advanced material preparations. Similar approaches may be used to mitigate problems caused by energy mismatch between water redox potentials and the band edges of hematite and many other low-cost metal oxides, enabling practical solar water splitting as a means for solar energy storage.
Nanoporous SiC: a candidate semi-permeable material for biomedical applications.

PubMed

Rosenbloom, A J; Sipe, D M; Shishkin, Y; Ke, Y; Devaty, R P; Choyke, W J

2004-12-01

We have fabricated free-standing SiC nanoporous membranes in both p -type and n -type material. We showed that these membranes will permit the diffusion of proteins up to 29000 Daltons, while excluding larger proteins. By using radioactively labeled albumin, we also show that porous SiC has very low protein adsorption, comparable to the best commercially available polymer nanoporous membrane.

Ultrasensitive photoelectrochemical aptasensor for lead ion detection based on sensitization effect of CdTe QDs on MoS2-CdS:Mn nanocomposites by the formation of G-quadruplex structure.

PubMed

Shi, Jian-Jun; Zhu, Jing-Chun; Zhao, Ming; Wang, Yan; Yang, Ping; He, Jie

2018-06-01

An ultrasensitive photoelectrochemical (PEC) aptasensor for lead ion (Pb 2+ ) detection was fabricated based on MoS 2 -CdS:Mn nanocomposites and sensitization effect of CdTe quantum dots (QDs). MoS 2 -CdS:Mn modified electrode was used as the PEC matrix for the immobilization of probe DNA (pDNA) labeled with CdTe QDs. Target DNA (tDNA) were hybridized with pDNA to made the QDs locate away from the electrode surface by the rod-like double helix. The detection of Pb 2+ was based on the conformational change of the pDNA to G-quadruplex structure in the presence of Pb 2+ , which made the labeled QDs move close to the electrode surface, leading to the generation of sensitization effect and evident increase of the photocurrent intensity. The linear range was 50 fM to 100 nM with a detection limit of 16.7 fM. The recoveries of the determination of Pb 2+ in real samples were in the range of 102.5-108.0%. This proposed PEC aptasensor provides a new sensing strategy for various heavy metal ions at ultralow levels. Copyright © 2018 Elsevier B.V. All rights reserved.
Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

NASA Astrophysics Data System (ADS)

Jiang, Yifan; Sung, Woongje; Baliga, Jayant; Wang, Sizhen; Lee, Bongmook; Huang, Alex

2018-02-01

This paper reports the study of the fabrication and characterization results of 10-kilo-volt (kV) 4H-SiC merged PiN/Schottky rectifiers. A metal contact process was developed to make the Schottky contact on n-type SiC and ohmic contact on p-type SiC at the same time. The diodes with different Schottky contact width were fabricated and characterized for comparison. With the improvement quality of the Schottky contact and the passivation layer, the devices show low leakage current up to 10 kV. The on-state characteristics from room temperature to elevated temperature (423 K) were demonstrated and compared between structures with different Schottky contact width.
Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si

NASA Astrophysics Data System (ADS)

Li, Jiyang; Song, Lihui; Yu, Xuegong; Yang, Deren

2018-04-01

Oxygen precipitates (OPs) are unavoidably formed in Czochralski silicon (CZ-Si) containing relatively high concentrations of oxygen. The recombination behavior of such defects is also vital for bulk devices like solar cells as they can reduce the minority carrier lifetime and degrade the cell performance. In our experiments, the characteristics of oxygen precipitation in n-type CZ-Si are systematically investigated by means of Fourier transform infrared spectroscopy (FTIR), deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC). It is found that the iron contamination in n-type CZ-Si can strongly influence the OPs generation and their electrical properties, whereas the hydrogen passivation can effectively reduce the recombination activity of OPs.
Photochemical grafting of methyl groups on a Si(111) surface using a Grignard reagent.

PubMed

Herrera, Marvin Ustaris; Ichii, Takashi; Murase, Kuniaki; Sugimura, Hiroyuki

2013-12-01

The photochemical grafting of methyl groups onto an n-type Si(111) substrate was successfully achieved using a Grignard reagent. The preparation involved illuminating a hydrogen-terminated Si(111) that was immersed in a CH3MgBr-THF solution. The success was attributed to the ability of the n-type hydrogenated substrate to produce holes on its surface when illuminated. The rate of grafting methyl groups onto the silicon surface was higher when a larger illumination intensity or when a substrate with lower dopant concentration was used. In addition, the methylated layer has an atomically flat structure, has a hydrophobic surface, and has electron affinity that was lower than the bulk Si. Copyright © 2013 Elsevier Inc. All rights reserved.
Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

NASA Technical Reports Server (NTRS)

Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.; Tanner, M.; Wang, K. L.; Mena, R. A.; Young, P. G.

1993-01-01

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.
Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

NASA Astrophysics Data System (ADS)

Green, R. T.; Luxmoore, I. J.; Lee, K. B.; Houston, P. A.; Ranalli, F.; Wang, T.; Parbrook, P. J.; Uren, M. J.; Wallis, D. J.; Martin, T.

2010-07-01

Incorporating GaN capping layers in conjunction with recessing has been identified as a means to maximize the high frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs). Doping the cap heavily n-type is required in order to ensure minimal loss of carriers from the channel. Using a SiCl4/SF6 dry etch plasma recipe, 250 nm gate length HEMTs with recess lengths varying from 300 nm to 5 μm are fabricated. Heavily doped n+GaN caps enabled contact resistances of 0.3 Ω mm to be achieved. Recessing using a SiCl4/SF6 recipe does not introduce significant numbers of bulk traps. Gate recessing in conjunction with Si3N4 passivation reduces rf dispersion to negligible levels.
Properties of the highly ionized disk and halo gas toward two distant high-latitude stars

NASA Technical Reports Server (NTRS)

Savage, Blair D.; Sembach, K. R.

1994-01-01

Goddard High Resolution Spectrograph (GHRS) intermediate -resolution observations of S III, Si III, Al III, Si IV, C IV, and N V absorption along the sight lines to HD 18100 (l = 217.9 deg, b = -62.7, d = 3.1 kpc, z = -2.8 kpc) and HD 100340 (l = 258.9 deg, b = +61.2 deg, d = 5.3 kpc, z = 4.6 kpc) are presented. These small science aperture spectra have resolutions ranging from 11 to 20 km/s full width at half maximum (FWHM) and S/N from 30 to 65 per diode substep. Strong absorption by moderately and highly ionized gas is seen in each direction. The absorption in the direction of the south Galactic polar region (HD 18100) is kinematically simple, while the absorption in the direction of north Galactic polar region (HD 100304) is kinematically complex. In each case the absorption by the highly ionized gas lies within the velocity range of absorption by neutral and weakly ionized gas. Along each sight line, the velocity dispersion determined from the unsaturated absorption lines increases with the energy required to create each ion. The logarithmic column densities for Al III, Si IV, C IV, and N V are log N(atoms/sq cm = 12.71, 13.10, 13.58, and 12.75 toward HD 18100 and log N = 12.88, 13.31, 13.83, and 13.04 toward HD 100340. Average ionic ratios among these species are very similar along the two sight lines. Differences in profile shape between the absorption for AL II, Si IV, C IV, and N V provide additional support for the claim of Savage, Sembach, & Cardelli (1994) that there exists two types of highly ionized gas in the interstellar medium. One type of highly ionized gas is responsible for the structured Si IV absorption and part of the C IV absorption. In this gas N(C IV)/N(Si IV) approximately 3.0 and N(C IV)/N(N V) greater than 6. The absorption by this gas seems to be associated with some type of self-regulating interface or mixing layer between the warm and hot interstellar medium. The other type of highly ionized gas is responsible for most of the N V absorption, part of the C IV absorption, and has very little associated Si IV absorption. In this gas N(C IV)/N(N V) is approximately 1 to 3. This gas is hot (T greater than 2 x 10(exp 5) K) and may be tracing the cooling gas of supernova (SN) bubbles or a Galactic fountain. The relative mixture of these two types of highly ionized gas varies from one sight line to the next. The two sight lines in this study sample halo gas in the solar neighborhood and have a smaller percentage of the more highly ionized gas than inner Galaxy sight lines.
Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion

NASA Astrophysics Data System (ADS)

Kocyigit, Adem; Orak, İkram; Turut, Abdulmecit

2018-03-01

Owing to importance of ZnO in electronics, Au/ZnO/n-type Si device was fabricated to investigate its dielectric properties by aid of capacitance-conductance-voltage measurements. While the ZnO thin film layer on the n-type Si was formed by atomic layer deposition (ALD) technique, the rectifying and ohmic contacts were obtained by thermal evaporation. The surface morphology of ZnO thin film was characterized using atomic force microscopy (AFM) to show its compatibility as interfacial layer in the Au/ZnO/n-type Si device. The dielectric properties of the device were examined in terms of dielectric parameters such as dielectric constant (ɛ‧), dielectric loss (ɛ″), loss tangent (tan δ), the real and imaginary parts of electric modulus (M ‧ and M ″) and ac electrical conductivity (σ) depending on applied voltages (from -1 to 2 V) and temperatures (from 140 K to 360 K) ranges. The results have revealed that interfacial polarization and charge carriers are the important parameters to affect the dielectric properties of the device with changing temperature. The device can be used at wide range temperatures for diode applications.
Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Bullock, James; Cuevas, Andres

2015-05-18

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negativemore » fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.« less
Silicon carbide at nanoscale: Finite single-walled to "infinite" multi-walled tubes

NASA Astrophysics Data System (ADS)

Adhikari, Kapil

A systematic ab initio study of silicon carbide (SiC) nanostructures, especially finite single-walled, infinite double- and multi-walled nanotubes and nanocones is presented. Electronic and structural properties of all these nanostructures have been calculated using hybrid density functionals (B3LYP and PBE0) as implemented in the GAUSSIAN 03/09 suite of software. The unusual dependence of band gap of silicon carbide nanotubes (SiCNT) has been explained as a direct consequence of curvature effect on the ionicity of the bonds. The study of fullerene hemisphere capped, finite SiC nanotubes indicates that the carbon-capped SiC nanotubes are energetically more preferred than silicon-capped finite or hydrogen terminated infinite nanotubes. Capping a nanotube by fullerene hemisphere reduces its band gap. SiC nanocones have also been investigated as possible cap structures of nanotubes. Electronic properties of the nanocones are found to be strongly dependent upon their tip and edge structures, with possible interesting applications in surface science. Three types of double-walled SiCNTs (n, n)@(m, m) (3 ≤ n ≤ 6 ; 7 ≤ m ≤ 12) have been studied using the finite cluster approximation. The stabilities of these nanotubes are of the same order as those of the single-walled SiC nanotubes and it should be experimentally possible to synthesize both single-walled and double-walled SiC nanotubes. The binding energy per atom or the cohesive energy of the double-walled nanotubes depends not only on the number of atoms but also on the coupling of the constituent single-walled nanotubes and their types. A study of binding energies, Mulliken charges, density of states and HOMO-LUMO gaps has been performed for all nanotubes from (n, n)@(n+3,n+3) to (n, n)@(n+6, n+6) (n=3-6). Evolution of band gaps of the SiCNTs with increase in the number of walls has also been investigated. The nature of interaction between transition metal atoms and silicon carbide nanotubes with different curvature has also been investigated. The curvature of the nanotubes affects the nature of the interaction between the nanotubes and the transition teal atoms. Our study of functionalized SiCNTs by 3d transition metal atoms indicates that these nanostructures can have possible applications in spintronics and nano-magnetic storage.
Comparative study on degradation and trap density-of-states of p type and n type organic semiconductors

NASA Astrophysics Data System (ADS)

Shijeesh, M. R.; Vikas, L. S.; Jayaraj, M. K.; Puigdollers, J.

2014-10-01

The OTFTs with both p type and n type channel layers were fabricated using the inverted-staggered (top contact) structure by thermal vapour deposition on Si/SiO2 substrate. Pentacene and N,N'-Dioctyl- 3,4,9,10- perylenedicarboximide (PTCDI-C8) were used as channel layer for the fabrications of p type and n type OTFTs respectively. A comparative study on the degradation and density of states (DOS) of p type and n type organic semiconductors have been carried out. In order to compare the stability and degradation of pentacene and PTCDI-C8 OTFTs, the devices were exposed to air for 2 h before performing electrical measurements in air. The DOS measurements revealed that a level with defect density of 1020 cm-3 was formed only in PTCDI C8 layer on exposure to air. The oxygen adsorption into the PTCDI-C8 active layer can be attributed to the formation of this level at 0.15 eV above the LUMO level. The electrical charge transport is strongly affected by the oxygen traps and hence n type organic materials are less stable than p type organic materials.
ZnO/CuO/M (M = Ag, Au) Hierarchical Nanostructure by Successive Photoreduction Process for Solar Hydrogen Generation.

PubMed

Kwon, Jinhyeong; Cho, Hyunmin; Jung, Jinwook; Lee, Habeom; Hong, Sukjoon; Yeo, Junyeob; Han, Seungyong; Ko, Seung Hwan

2018-05-12

To date, solar energy generation devices have been widely studied to meet a clean and sustainable energy source. Among them, water splitting photoelectrochemical cell is regarded as a promising energy generation way for splitting water molecules and generating hydrogen by sunlight. While many nanostructured metal oxides are considered as a candidate, most of them have an improper bandgap structure lowering energy transition efficiency. Herein, we introduce a novel wet-based, successive photoreduction process that can improve charge transfer efficiency by surface plasmon effect for a solar-driven water splitting device. The proposed process enables to fabricate ZnO/CuO/Ag or ZnO/CuO/Au hierarchical nanostructure, having an enhanced electrical, optical, photoelectrochemical property. The fabricated hierarchical nanostructures are demonstrated as a photocathode in the photoelectrochemical cell and characterized by using various analytic tools.
ZnO/CuO/M (M = Ag, Au) Hierarchical Nanostructure by Successive Photoreduction Process for Solar Hydrogen Generation

PubMed Central

Kwon, Jinhyeong; Cho, Hyunmin; Jung, Jinwook; Lee, Habeom; Han, Seungyong

2018-01-01

To date, solar energy generation devices have been widely studied to meet a clean and sustainable energy source. Among them, water splitting photoelectrochemical cell is regarded as a promising energy generation way for splitting water molecules and generating hydrogen by sunlight. While many nanostructured metal oxides are considered as a candidate, most of them have an improper bandgap structure lowering energy transition efficiency. Herein, we introduce a novel wet-based, successive photoreduction process that can improve charge transfer efficiency by surface plasmon effect for a solar-driven water splitting device. The proposed process enables to fabricate ZnO/CuO/Ag or ZnO/CuO/Au hierarchical nanostructure, having an enhanced electrical, optical, photoelectrochemical property. The fabricated hierarchical nanostructures are demonstrated as a photocathode in the photoelectrochemical cell and characterized by using various analytic tools. PMID:29757225
An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.

2017-06-26

For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Vocmore » exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.« less
Group-IV midinfrared plasmonics

NASA Astrophysics Data System (ADS)

Biagioni, Paolo; Frigerio, Jacopo; Samarelli, Antonio; Gallacher, Kevin; Baldassarre, Leonetta; Sakat, Emilie; Calandrini, Eugenio; Millar, Ross W.; Giliberti, Valeria; Isella, Giovanni; Paul, Douglas J.; Ortolani, Michele

2015-01-01

The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recently proposed as a promising way to obtain high-quality and tunable plasmonic materials. We introduce a plasmonic platform based on epitaxial n-type Ge grown on standard Si wafers by means of low-energy plasma-enhanced chemical vapor deposition. Due to the large carrier concentration achieved with P dopants and to the compatibility with the existing CMOS technology, SiGe plasmonics hold promises for mid-IR applications in optoelectronics, IR detection, sensing, and light harvesting. As a representative example, we show simulations of mid-IR plasmonic waveguides based on the experimentally retrieved dielectric constants of the grown materials.
Synthesis and characterization of group IV semiconductor nanowires by vapor-liquid-solid growth

NASA Astrophysics Data System (ADS)

Lew, Kok-Keong

There is currently intense interest in one-dimensional nanostructures, such as nanotubes and nanowires, due to their potential to test fundamental concepts of dimensionality and to serve as building blocks for nanoscale devices. Vapor-liquid-solid (VLS) growth, which is one of the most common fabrication methods, has been used to produce single crystal semiconductor nanowires such as silicon (Si), germanium (Ge), and gallium arsenide (GaAs). In the VLS growth of Group IV semiconductor nanowires, a metal, such as gold (Au) is used as a catalyst agent to nucleate whisker growth from a Si-containing (silane (SIH4)) or Ge-containing vapor (germane (GeH 4)). Au and Si/Ge form a liquid alloy that has a eutectic temperature of around 360°C, which, upon supersaturation, nucleates the growth of a Si or Ge wire. The goal of this work is to develop a more fundamental understanding of VLS growth kinetics and intentional doping of Group IV semiconductor nanowires in order to better control the properties of the nanowires. The fabrication of p-type and n-type Si nanowires will be studied via the addition of dopant gases such as diborane (B2H 6), trimethylboron (TMB), and phosphine (PH3) during growth. The use of gaseous dopant sources provides more flexibility in growth, particularly for the fabrication of p-n junctions and structures with axial dopant variations (e.g. p+-p- p+). The study is then extended to fabricate SiGe alloy nanowires by mixing SiH4 and GeH4. Bandgap engineering in Si/SiGe heterostructures can lead to novel devices with improved performance compared to those made entirely of Si. The scientific findings will lead to a better understanding of the fabrication of Si/SiGe axial and radial heterostructure nanowires for functional nanowire device structures, such as heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). Eventually, the central theme of this research is to provide a scientific knowledge base and foundation for the design of Si, Ge, and SiGe nanostructures that will be of importance in nanoscale device applications.
A new photoelectrochemical biosensors based on DNA conformational changes and isothermal circular strand-displacement polymerization reaction.

PubMed

Zhang, Xiaoru; Xu, Yunpeng; Zhao, Yanqing; Song, Weiling

2013-01-15

We report a strategy for the transduction of DNA hybridization into a readily detectable photoelectrochemical signal by means of a conformational change analogous to electrochemical DNA (E-DNA) approach. To demonstrate the effect of distance change for photosensitizer to the surface of electrode on the change of photocurrent, photosensitizer Ru(bpy)(2)(dcbpy)(2+) tagged DNA stem-loop structures were self-assembled onto a nanogold modified ITO electrode. Hybridization induced a large conformational change in DNA structure, which in turn significantly altered the electron-transfer tunneling distance between the electrode and photosensitizer. The resulting change in photocurrent was proportional to the concentration of DNA in the range of 1.0×10(-10)-8.0×10(-9)M. In order to improve the sensitivity of the photoelectrochemical biosensor, an amplified detection method based on isothermal strand displacement polymerization reaction was employed. With multiple rounds of isothermal strand replication, which led to strand displacement and constituted consecutive signal amplification, a detection limit of 9.4×10(-14)M target DNA was achieved. Copyright © 2012 Elsevier B.V. All rights reserved.
Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC

NASA Astrophysics Data System (ADS)

Mitani, Takeshi; Nakashima, Shin-ichi; Kojima, Kazutoshi; Kato, Tomohisa; Okumura, Hajime

2012-08-01

For n-type 4H-SiC crystals with carrier concentrations between 2 × 1017 and 2.5 × 1020 cm-3, Fano interference of the folded transverse acoustic (FTA) doublet modes was observed. The Fano line-shape parameters were shown to vary with carrier concentration. It is proposed that the peak shifts in the FTA modes resulting from interference with an electronic continuum state can be used to measure carrier concentration for n-type 4H-SiC up to 1020 cm-3. In addition, the relative intensity of the FTA doublet modes varies markedly with carrier concentrations above 5 × 1018 cm-3. This suggests that mode coupling occurs between the FTA doublet components. The variation in the intensity ratio is attributed to the intensity transfer between the FTA doublet components. This mode coupling arises from a phonon-phonon interaction via electronic continuum state-phonon interactions.
Improved performance of silicon nitride-based high temperature ceramics

NASA Technical Reports Server (NTRS)

Ashbrook, R. L.

1977-01-01

Recent progress in the production of Si3N4 based ceramics is reviewed: (1) high temperature strength and toughness of hot pressed Si3N4 were improved by using high purity powder and a stabilized ZrO2 additive, (2) impact resistance of hot pressed Si3N4 was increased by the use of a crushable energy absorbing layer, (3) the oxidation resistance and strength of reaction sintered Si3N4 were increased by impregnating reaction sintered silicon nitride with solutions that oxidize to Al2O3 or ZrO2, (4) beta prime SiA1ON compositions and sintering aids were developed for improved oxidation resistance or improved high temperature strength.
Evaluation of Electrical Characteristics and Trap-State Density in Bottom-Gate Polycrystalline Thin Film Transistors Processed with High-Pressure Water Vapor Annealing

NASA Astrophysics Data System (ADS)

Kunii, Masafumi

2006-02-01

This paper discusses electrical characteristics and trap-state density in polycrystalline silicon (poly-Si) used in bottom-gate poly-Si thin film transistors (TFTs) processed with high-pressure water vapor annealing (HWA). The threshold voltage uniformity of the HWA-processed TFTs is improved by 42% for N-channel and 38% for P-channel TFTs in terms of standard deviation, and carrier mobility is enhanced by 10% or greater for both N- and P-channel TFTs than those TFTs processed conventionally. Subthreshold swing is also improved by HWA, showing that HWA postannealing is effective for improving the Si/SiO2 interface of the bottom-gate TFTs. Two types of TFTs having different poly-Si crystallinities are examined to investigate carrier transport in poly-Si processed by HWA postannealing. The evaluation of trap-state density for the two types of poly-Si reveals that HWA postannealing is more efficient for N-channel than for P-channel TFTs. Furthermore, HWA postannealing is more effective for poly-Si with high crystallinity to improve TFT characteristics. The analysis of the trap-state distributions and the activation energy of TFT drain current indicate that HWA deactivates dangling bonds highly localized at poly-Si grain boundaries (GBs). Thus, HWA postannealing effects can be interpreted by a GB barrier potential model similar to that applied to conventional hydrogenation.

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