Effects of surface passivation dielectrics on carrier transport in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Oh, Sejoon; Jang, Han-Soo; Choi, Chel-Jong; Cho, Jaehee

2018-04-01

Dielectric layers prepared by different deposition methods were used for the surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the corresponding electrical characteristics were examined. Increases in the sheet charge density and the maximum drain current by approximately 45% and 28%, respectively, were observed after the deposition of a 100 nm-thick SiO2 layer by plasma-enhanced chemical vapor deposition (PECVD) on the top of the AlGaN/GaN HFETs. However, SiO2 deposited by a radio frequency (rf) sputter system had the opposite effect. As the strain applied to AlGaN was influenced by the deposition methods used for the dielectric layers, the carrier transport in the two-dimensional electron gas formed at the interface between AlGaN and GaN was affected accordingly.

Reduced gas seepages in ophiolitic complexes: Evidences for multiple origins of the H2-CH4-N2 gas mixtures

NASA Astrophysics Data System (ADS)

Vacquand, Christèle; Deville, Eric; Beaumont, Valérie; Guyot, François; Sissmann, Olivier; Pillot, Daniel; Arcilla, Carlo; Prinzhofer, Alain

2018-02-01

This paper proposes a comparative study of reduced gas seepages occurring in ultrabasic to basic rocks outcropping in ophiolitic complexes based on the study of seepages from Oman, the Philippines, Turkey and New Caledonia. This study is based on analyses of the gas chemical composition, noble gases contents, stable isotopes of carbon, hydrogen and nitrogen. These seepages are mostly made of mixtures of three main components which are H2, CH4 and N2 in various proportions. The relative contents of the three main gas components show 4 distinct types of gas mixtures (H2-rich, N2-rich, N2-H2-CH4 and H2-CH4). These types are interpreted as reflecting different zones of gas generation within or below the ophiolitic complexes. In the H2-rich type, associated noble gases display signatures close to the value of air. In addition to the atmospheric component, mantle and crustal contributions are present in the N2-rich, N2-H2-CH4 and H2-CH4 types. H2-bearing gases are either associated with ultra-basic (pH 10-12) spring waters or they seep directly in fracture systems from the ophiolitic rocks. In ophiolitic contexts, ultrabasic rocks provide an adequate environment with available Fe2+ and alkaline conditions that favor H2 production. CH4 is produced either directly by reaction of dissolved CO2 with basic-ultrabasic rocks during the serpentinization process or in a second step by H2-CO2 interaction. H2 is present in the gas when no more carbon is available in the system to generate CH4. The N2-rich type is notably associated with relatively high contents of crustal 4He and in this gas type N2 is interpreted as issued mainly from sediments located below the ophiolitic units.

Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE

NASA Astrophysics Data System (ADS)

Li, Shunfeng; Wang, Xue; Mohajerani, Matin Sadat; Fündling, Sönke; Erenburg, Milena; Wei, Jiandong; Wehmann, Hergo-Heinrich; Waag, Andreas; Mandl, Martin; Bergbauer, Werner; Strassburg, Martin

2013-02-01

Selective area growth of GaN rods by metalorganic vapor phase epitaxy has attracted great interest due to its novel applications in optoelectronic and photonics. In this work, we will present the dependence of GaN rod morphology on various growth parameters i.e. growth temperature, H2/N2 carrier gas concentration, V/III ratio, total carrier gas flow and reactor pressure. It is found that higher growth temperature helps to increase the aspect ratio of the rods, but reduces the height homogeneity. Furthermore, H2/N2 carrier gas concentration is found to be a critical factor to obtain vertical rod growth. Pure nitrogen carrier gas leads to irregular growth of GaN structure, while an increase of hydrogen carrier gas results in vertical GaN rod growth. Higher hydrogen carrier gas concentration also reduces the diameter and enhances the aspect of the GaN rods. Besides, increase of V/III ratio causes reduction of the aspect ratio of N-polar GaN rods, which could be explained by the relatively lower growth rate on (000-1) N-polar top surface when supplying more ammonia. In addition, an increase of the total carrier gas flow leads to a decrease in the diameter and the average volume of GaN rods. These phenomena are tentatively explained by the change of partial pressure of the source materials and boundary layer thickness in the reactor. Finally, it is shown that the average volume of the N-polar GaN rods keeps a similar value for a reactor pressure PR of 66 and 125 mbar, while an incomplete filling of the pattern opening is observed with PR of 250 mbar. Room temperature photoluminescence spectrum of the rods is also briefly discussed.

Reduced gas seepages in serpentinized peridotite complexes: Evidences for multiple origins of the H2-CH4-N2 gas mixtures

NASA Astrophysics Data System (ADS)

Deville, E.; Vacquand, C.; Beaumont, V.; Francois, G.; Sissmann, O.; Pillot, D.; Arcilla, C. A.; Prinzhofer, A.

2017-12-01

A comparative study of reduced gas seepages associated to serpentinized ultrabasic rocks was conducted in the ophiolitic complexes of Oman, the Philippines, Turkey and New Caledonia. This study is based on analyzes of the gas chemical composition, noble gases contents, and stable isotopes of carbon, hydrogen and nitrogen. These gas seepages are mostly made of mixtures of three main components which are H2, CH4 and N2 in various proportions. The relative contents of the three main gas components show 4 distinct families of gas mixtures (H2-rich, N2-rich, N2-H2-CH4 and H2-CH4). These families are interpreted as reflecting different zones of gas generation within or below the ophiolitic complexes. In the H2-rich family associated noble gases display signatures close to the value of air. In addition to the atmospheric component, mantle and crustal contributions are present in the N2-rich, N2-H2-CH4 and H2-CH4 families. H2-bearing gases are either associated to ultra-basic (pH 10-12) spring waters or they seep directly in fracture systems from the ophiolitic rocks. In ophiolitic contexts, ultrabasic rocks provide an adequate environment with available Fe2+ and high pH conditions that favor H2 production. CH4 is produced either directly by reaction of dissolved CO2 with basic-ultrabasic rocks during the serpentinization process or in a second step by H2-CO2 interaction. H2 is present in the gas when no more carbon is available in the system to generate CH4 (conditions of strong carbon restriction). The N2-rich family is associated with relatively high contents of crustal 4He. In this family N2 is interpreted as issued mainly from sediments located below the ophiolitic units.

Method for measuring changes in the atmospheric O2/N2 ratio by a gas chromatograph equipped with a thermal conductivity detector

NASA Astrophysics Data System (ADS)

Tohjima, Yasunori

2000-06-01

We present a method for measuring changes in the atmospheric O2/N2 ratio based on data from a gas chromatograph (GC) equipped with a thermal conductivity detector (TCD). In this method, O2 and N2 in an air sample are separated on a column filled with molecular sieve 5A with H2 carrier gas. Since the separated O2 includes Ar, which has a retention time similar to that of O2, the (O2+Ar)/N2 ratio is actually measured. The change in the measured (O2+Ar)/N2 ratio can be easily converted to that in the O2/N2 ratio with a very small error based on the fact that the atmospheric Ar/N2 ratio is almost constant. The improvements to achieve the high-precision measurement include stabilization of the pressure at the GC column head and at the outlets of the TCD and the sample loop. Additionally, the precision is improved statistically by repeating alternate analyses of sample and a reference gas. The standard deviation of the replicate cycles of reference and sample analyses is about 18 per meg (corresponding to 3.8 parts per million (ppm) O2 in air). This means that the standard error is about 7 per meg (1.5 ppm O2 in air) for seven cycles of alternate analyses, which takes about 70 min. The response of this method is likely to have a 2% nonlinearity. Ambient air samples are collected under pressure in glass flasks equipped with two stopcocks sealed by Viton O-rings at both ends. Pressure depletion in the flask during the O2/N2 measurement does not cause any detectable change in the O2/N2 ratio, but the O2/N2 ratio in the flask was found to gradually decrease during the storage period. We also present preliminary results from air samples collected at Hateruma Island (latitude 24°03'N, longitude 123°49') from July 1997 through March 1999. The observed O2/N2 ratios clearly show a seasonal variation, increasing in spring and summer and decreasing in autumn and winter.

Biomass fast pyrolysis in a fluidized bed reactor under N2, CO2, CO, CH4 and H2 atmospheres.

PubMed

Zhang, Huiyan; Xiao, Rui; Wang, Denghui; He, Guangying; Shao, Shanshan; Zhang, Jubing; Zhong, Zhaoping

2011-03-01

Biomass fast pyrolysis is one of the most promising technologies for biomass utilization. In order to increase its economic potential, pyrolysis gas is usually recycled to serve as carrier gas. In this study, biomass fast pyrolysis was carried out in a fluidized bed reactor using various main pyrolysis gas components, namely N(2), CO(2), CO, CH(4) and H(2), as carrier gases. The atmosphere effects on product yields and oil fraction compositions were investigated. Results show that CO atmosphere gave the lowest liquid yield (49.6%) compared to highest 58.7% obtained with CH(4). CO and H(2) atmospheres converted more oxygen into CO(2) and H(2)O, respectively. GC/MS analysis of the liquid products shows that CO and CO(2) atmospheres produced less methoxy-containing compounds and more monofunctional phenols. The higher heating value of the obtained bio-oil under N(2) atmosphere is only 17.8 MJ/kg, while that under CO and H(2) atmospheres increased to 23.7 and 24.4 MJ/kg, respectively. Copyright © 2010 Elsevier Ltd. All rights reserved.

Influence of Thermal Annealing on Free Carrier Concentration in (GaN) 1–x(ZnO) x Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Huafeng; Sklute, Elizabeth C.; Lehuta, Keith A.

It has been previously demonstrated that the efficiency of (GaN) 1–x(ZnO) x semiconductors for solar water splitting can be improved by thermal annealing, though the origin of this improvement was not resolved. In the present work, it is shown that annealing reduces the free carrier (electron) concentration of (GaN) 1–x(ZnO) x. The time-, temperature-, and atmosphere-dependent changes were followed through two simple techniques: indirect diffuse reflectance measurements from 0.5 to 3.0 eV which show very high sensitivity to the free carrier response at the lowest energies and EPR measurements which directly probe the number of unpaired electrons. For the thermalmore » annealing of investigated compositions, it is found that temperatures of 250 °C and below do not measurably change the free carrier concentration, a gradual reduction of the free carrier concentration occurs over a time period of many hours at 350 °C, and the complete elimination of free carriers happens within an hour at 550 °C. These changes are driven by an oxidative process which is effectively suppressed under actively reducing atmospheres (H 2, NH 3) but which can still occur under nominally inert gases (N 2, Ar). Surprisingly, it is found that the N 2 gas released during thermal oxidation of (GaN) 1–x(ZnO) x samples remains trapped within the solid matrix and is not expelled until temperatures of about 900 °C, a result directly confirmed through neutron pair-distribution fuction (PDF) measurements which show a new peak at the 1.1 Å bond length of molecular nitrogen after annealing. Preliminary comparative photoelectrochemical (PEC) measurements of the influence of free carrier concentration on photoactivity for water oxidation were carried out for a sample with x = 0.64. Samples annealed to eliminate free carriers exhibited no photoactivity for water oxidation, while a complex dependence on carrier concentration was observed for samples with intermediate free carrier concentrations

Influence of Thermal Annealing on Free Carrier Concentration in (GaN) 1–x(ZnO) x Semiconductors

DOE PAGES

Huang, Huafeng; Sklute, Elizabeth C.; Lehuta, Keith A.; ...

2017-09-13

It has been previously demonstrated that the efficiency of (GaN) 1–x(ZnO) x semiconductors for solar water splitting can be improved by thermal annealing, though the origin of this improvement was not resolved. In the present work, it is shown that annealing reduces the free carrier (electron) concentration of (GaN) 1–x(ZnO) x. The time-, temperature-, and atmosphere-dependent changes were followed through two simple techniques: indirect diffuse reflectance measurements from 0.5 to 3.0 eV which show very high sensitivity to the free carrier response at the lowest energies and EPR measurements which directly probe the number of unpaired electrons. For the thermalmore » annealing of investigated compositions, it is found that temperatures of 250 °C and below do not measurably change the free carrier concentration, a gradual reduction of the free carrier concentration occurs over a time period of many hours at 350 °C, and the complete elimination of free carriers happens within an hour at 550 °C. These changes are driven by an oxidative process which is effectively suppressed under actively reducing atmospheres (H 2, NH 3) but which can still occur under nominally inert gases (N 2, Ar). Surprisingly, it is found that the N 2 gas released during thermal oxidation of (GaN) 1–x(ZnO) x samples remains trapped within the solid matrix and is not expelled until temperatures of about 900 °C, a result directly confirmed through neutron pair-distribution fuction (PDF) measurements which show a new peak at the 1.1 Å bond length of molecular nitrogen after annealing. Preliminary comparative photoelectrochemical (PEC) measurements of the influence of free carrier concentration on photoactivity for water oxidation were carried out for a sample with x = 0.64. Samples annealed to eliminate free carriers exhibited no photoactivity for water oxidation, while a complex dependence on carrier concentration was observed for samples with intermediate free carrier concentrations

Removal of NO in NO/N2, NO/N2/O2, NO/CH4/N2, and NO/CH4/O2/N2 systems by flowing microwave discharges.

PubMed

Hueso, José L; Gonzalez-Elipe, Agustín R; Cotrino, José; Caballero, Alfonso

2007-02-15

In this paper, continuing previous work, we report on experiments carried out to investigate the removal of NO from simulated flue gas in nonthermal plasmas. The plasma-induced decomposition of small concentrations of NO in N2 used as the carrier gas and O2 and CH4 as minority components has been studied in a surface wave discharge induced with a surfatron launcher. The reaction products and efficiency have been monitored by mass spectrometry as a function of the composition of the mixture. NO is effectively decomposed into N2 and O2 even in the presence of O2, provided always that enough CH4 is also present in the mixture. Other majority products of the plasma reactions under these conditions are NH3, CO, and H2. In the absence of O2, decomposition of NO also occurs, although in that case HCN accompanies the other reaction products as a majority component. The plasma for the different reaction mixtures has been characterized by optical emission spectroscopy. Intermediate excited species of NO*, C*, CN*, NH*, and CH* have been monitored depending on the gas mixture. The type of species detected and their evolution with the gas composition are in agreement with the reaction products detected in each case. The observations by mass spectrometry and optical emission spectroscopy are in agreement with the kinetic reaction models available in literature for simple plasma reactions in simple reaction mixtures.

Solid-phase microextraction may catalize hydrogenation when using hydrogen as carrier in gas chromatography.

PubMed

Fiorini, D; Boarelli, M C

2016-07-01

When hydrogen is used as carrier gas, carbon-carbon double bonds may be hydrogenated in the hot gas chromatograph (GC) injector if introduced by solid-phase microextraction (SPME). SPME fibers coated with polydimethylsiloxane (PDMS)/carboxen/divinylbenzene (DVB), PDMS/carboxen, polyacrylate, PDMS/DVB and PDMS on fused silica, stableflex or metal alloy core have been tested with fatty acid methyl esters (FAMEs) from olive oil. Using coatings containing DVB, hydrogenation took place with high conversion rates (82.0-92.9%) independently of the core material. With all fibers having a metal core, hydrogenation was observed to a certain extent (27.4-85.3%). PDMS, PDMS/carboxen and polyacrylate coated fibers with a fused silica or stableflex core resulted in negligible hydrogenation (0.2-2.5%). The occurrence of hydrogenation was confirmed also with other substances containing carbon-carbon double bonds (n-alkenes, alkenoic acids, mono- and polyunsaturated fatty acid methyl and ethyl esters). Copyright © 2016 Elsevier B.V. All rights reserved.

Determination of carrier diffusion length in GaN

NASA Astrophysics Data System (ADS)

Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Gil, Bernard

2015-01-01

Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) and cross-sectional cathodoluminescence (CL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p-GaN or 1500 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photo-generation near the surface region by above bandgap excitation. Taking into consideration the absorption in the top GaN layer as well as active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be 93 ± 7 nm and 70 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively, at photogenerated carrier densities of 4.2 × 1018 cm-3 using PL spectroscopy. CL measurements of the unintentionally doped n-type GaN layer at much lower carrier densities of 1017 cm-3 revealed a longer diffusion length of 525 ± 11 nm at 6 K.

Ultrafast carrier dynamics in a p-type GaN wafer under different carrier distributions

NASA Astrophysics Data System (ADS)

Fang, Yu; Yang, Junyi; Yang, Yong; Wu, Xingzhi; Xiao, Zhengguo; Zhou, Feng; Song, Yinglin

2016-02-01

The dependence of the carrier distribution on photoexcited carrier dynamics in a p-type Mg-doped GaN (GaN:Mg) wafer were systematically measured by femtosecond transient absorption (TA) spectroscopy. The homogeneity of the carrier distribution was modified by tuning the wavelength of the UV pulse excitation around the band gap of GaN:Mg. The TA kinetics appeared to be biexponential for all carrier distributions, and only the slower component decayed faster as the inhomogeneity of the carrier distribution increased. It was concluded that the faster component (50-70 ps) corresponded to the trap process of holes by the Mg acceptors, and the slower component (150-600 ps) corresponded to the combination of non-radiative surface recombination and intrinsic carrier recombination via dislocations. Moreover, the slower component increased gradually with the incident fluence due to the saturation of surface states.

33 CFR 165.110 - Safety and Security Zone; Liquefied Natural Gas Carrier Transits and Anchorage Operations, Boston...

Code of Federal Regulations, 2012 CFR

2012-07-01

... 33 Navigation and Navigable Waters 2 2012-07-01 2012-07-01 false Safety and Security Zone; Liquefied Natural Gas Carrier Transits and Anchorage Operations, Boston, Massachusetts. 165.110 Section 165... Carrier Transits and Anchorage Operations, Boston, Massachusetts. (a) Definitions. As used in this section...

33 CFR 165.110 - Safety and Security Zone; Liquefied Natural Gas Carrier Transits and Anchorage Operations, Boston...

Code of Federal Regulations, 2014 CFR

2014-07-01

... 33 Navigation and Navigable Waters 2 2014-07-01 2014-07-01 false Safety and Security Zone; Liquefied Natural Gas Carrier Transits and Anchorage Operations, Boston, Massachusetts. 165.110 Section 165... Carrier Transits and Anchorage Operations, Boston, Massachusetts. (a) Definitions. As used in this section...

33 CFR 165.110 - Safety and Security Zone; Liquefied Natural Gas Carrier Transits and Anchorage Operations, Boston...

Code of Federal Regulations, 2011 CFR

2011-07-01

... 33 Navigation and Navigable Waters 2 2011-07-01 2011-07-01 false Safety and Security Zone; Liquefied Natural Gas Carrier Transits and Anchorage Operations, Boston, Massachusetts. 165.110 Section 165... Carrier Transits and Anchorage Operations, Boston, Massachusetts. (a) Definitions. As used in this section...

33 CFR 165.110 - Safety and Security Zone; Liquefied Natural Gas Carrier Transits and Anchorage Operations, Boston...

Code of Federal Regulations, 2013 CFR

2013-07-01

... 33 Navigation and Navigable Waters 2 2013-07-01 2013-07-01 false Safety and Security Zone; Liquefied Natural Gas Carrier Transits and Anchorage Operations, Boston, Massachusetts. 165.110 Section 165... Carrier Transits and Anchorage Operations, Boston, Massachusetts. (a) Definitions. As used in this section...

Ultrafast carrier capture and Auger recombination in single GaN/InGaN multiple quantum well nanowires

DOE PAGES

Boubanga-Tombet, Stephane; Wright, Jeremy B.; Lu, Ping; ...

2016-11-04

Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. In this paper, we used this technique to study carrier dynamics in single GaN/InGaN core–shell nonpolar multiple quantum well nanowires. We find that intraband carrier–carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombination at lower densities. Finally, the Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.

Studies on guanidinated N-3-aminopropyl methacrylamide-N-2-hydroxypropyl methacrylamide co-polymers as gene delivery carrier.

PubMed

Qin, Zhu; Liu, Wei; Guo, Liang; Li, Xinsong

2012-01-01

Guanidinated N-3-aminopropyl methacrylamide (APMA)-N-2-hydroxypropyl methacrylamide (HPMA) co-polymers were prepared and evaluated to develop novel non-viral gene transfection carriers. The co-polymers were synthesized via radical co-polymerization of APMA and HPMA followed by total guanidination of amino groups, which employed guanidinated APMA (GPMA) for increasing cell-penetrating and HPMA as the positive shielding content. The molecular weight of guanidinated APMA-HPMA co-polymers (GPMA-HPMA) was determined by static light scattering. Furthermore, cytotoxicity and transfection experiments of GPMA-HPMA/pDNA complexes were conducted. A significant decrease of their parent cytotoxicity and an efficient transfection at relative low charge ratios were observed. The cellular distribution of most GPMA-HPMA/pDNA complexes was partially localized in the nucleus, as indicated by confocal laser scanning microscopy. The guanidination strategy employed may lead to non-viral gene delivery carriers that combine satisfactory transfection efficiency and cytotoxicity, which contribute to their cell-penetrating ability.

CO2 Capture by Injection of Flue Gas or CO2-N2 Mixtures into Hydrate Reservoirs: Dependence of CO2 Capture Efficiency on Gas Hydrate Reservoir Conditions.

PubMed

Hassanpouryouzband, Aliakbar; Yang, Jinhai; Tohidi, Bahman; Chuvilin, Evgeny; Istomin, Vladimir; Bukhanov, Boris; Cheremisin, Alexey

2018-04-03

Injection of flue gas or CO 2 -N 2 mixtures into gas hydrate reservoirs has been considered as a promising option for geological storage of CO 2 . However, the thermodynamic process in which the CO 2 present in flue gas or a CO 2 -N 2 mixture is captured as hydrate has not been well understood. In this work, a series of experiments were conducted to investigate the dependence of CO 2 capture efficiency on reservoir conditions. The CO 2 capture efficiency was investigated at different injection pressures from 2.6 to 23.8 MPa and hydrate reservoir temperatures from 273.2 to 283.2 K in the presence of two different saturations of methane hydrate. The results showed that more than 60% of the CO 2 in the flue gas was captured and stored as CO 2 hydrate or CO 2 -mixed hydrates, while methane-rich gas was produced. The efficiency of CO 2 capture depends on the reservoir conditions including temperature, pressure, and hydrate saturation. For a certain reservoir temperature, there is an optimum reservoir pressure at which the maximum amount of CO 2 can be captured from the injected flue gas or CO 2 -N 2 mixtures. This finding suggests that it is essential to control the injection pressure to enhance CO 2 capture efficiency by flue gas or CO 2 -N 2 mixtures injection.

Fast Solar-Blind AlGaN/GaN 2DEG UV detector with Transparent Graphene Electrode

DTIC Science & Technology

2017-03-01

graphene and 2D electron gas (2DEG). With introducing the graphene, photo-carriers separated by the polarization electric field of the AlGaN are...photodiodes, due to the strong intrinsic polarization effect of AlGaN. More than 105 of high signal to noise ratio of the UV detectors with fast...intrinsic polarization field vertically inside the AlGaN, the holes and electrons will travel in their shortest paths to graphene and 2DEG

Anisotropic carrier mobility in single- and bi-layer C3N sheets

NASA Astrophysics Data System (ADS)

Wang, Xueyan; Li, Qingfang; Wang, Haifeng; Gao, Yan; Hou, Juan; Shao, Jianxin

2018-05-01

Based on the density functional theory combined with the Boltzmann transport equation with relaxation time approximation, we investigate the electronic structure and predict the carrier mobility of single- and bi-layer newly fabricated 2D carbon nitrides C3N. Although C3N sheets possess graphene-like planar hexagonal structure, the calculated carrier mobility is remarkably anisotropic, which is found mainly induced by the anisotropic effective masses and deformation potential constants. Importantly, we find that both the electron and hole mobilities are considerable high, for example, the hole mobility along the armchair direction of single-layer C3N sheets can arrive as high as 1.08 ×104 cm2 V-1 s-1, greatly larger than that of C2N-h2D and many other typical 2D materials. Owing to the high and anisotropic carrier mobility and appropriate band gap, single- and bi-layer semiconducting C3N sheets may have great potential applications in high performance electronic and optoelectronic devices.

33 CFR 165.110 - Safety and Security Zone; Liquefied Natural Gas Carrier Transits and Anchorage Operations, Boston...

Code of Federal Regulations, 2010 CFR

2010-07-01

...; Liquefied Natural Gas Carrier Transits and Anchorage Operations, Boston, Massachusetts. 165.110 Section 165... Limited Access Areas First Coast Guard District § 165.110 Safety and Security Zone; Liquefied Natural Gas... ahead and one mile astern, and 500 yards on each side of any liquefied natural gas carrier (LNGC) vessel...

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

DOE PAGES

Dai, Qi; Shan, Qifeng; Wang, Jing; ...

2010-09-30

In this work, we model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn 2+Cn 3+f(n), where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10 -29 cm 6 s -1. Finally, comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.

Novel microelectrode-based online system for monitoring N2O gas emissions during wastewater treatment.

PubMed

Marques, Ricardo; Oehmen, Adrian; Pijuan, Maite

2014-11-04

Clark-type nitrous oxide (N2O) microelectrodes are commonly used for measuring dissolved N2O levels, but have not previously been tested for gas-phase applications, where the N2O emitted from wastewater systems can be directly quantified. In this study, N2O microelectrodes were tested and validated for online gas measurements, and assessed with respect to their temperature, gas flow, composition dependence, gas pressure, and humidity. An exponential correlation between temperature and sensor signal was found, whereas gas flow, composition, pressure, and humidity did not have any influence on the signal. Two of the sensors were tested at different N2O concentration ranges (0-422.3, 0-50, 0-10, and 0-2 ppmv N2O) and exhibited a linear response over each range. The N2O emission dynamics from two laboratory scale sequencing batch reactors performing ammonia or nitrite oxidation were also monitored using one of the microsensors and results were compared with two other analytical methods. Results show that N2O emissions were accurately described with these microelectrodes and support their application for assessing gaseous N2O emissions from wastewater treatment systems. Advantages of the sensors as compared to conventional measurement techniques include a wider quantification range of N2O fluxes, and a single measurement system that can assess both liquid and gas-phase N2O dynamics.

Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee

2018-04-01

This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

The effect of carrier gas flow rate and source cell temperature on low pressure organic vapor phase deposition simulation by direct simulation Monte Carlo method

PubMed Central

Wada, Takao; Ueda, Noriaki

2013-01-01

The process of low pressure organic vapor phase deposition (LP-OVPD) controls the growth of amorphous organic thin films, where the source gases (Alq3 molecule, etc.) are introduced into a hot wall reactor via an injection barrel using an inert carrier gas (N2 molecule). It is possible to control well the following substrate properties such as dopant concentration, deposition rate, and thickness uniformity of the thin film. In this paper, we present LP-OVPD simulation results using direct simulation Monte Carlo-Neutrals (Particle-PLUS neutral module) which is commercial software adopting direct simulation Monte Carlo method. By estimating properly the evaporation rate with experimental vaporization enthalpies, the calculated deposition rates on the substrate agree well with the experimental results that depend on carrier gas flow rate and source cell temperature. PMID:23674843

Structure and Function of the Sterol Carrier Protein-2 N-Terminal Presequence†

PubMed Central

Martin, Gregory G.; Hostetler, Heather A.; McIntosh, Avery L.; Tichy, Shane E.; Williams, Brad J.; Russell, David H.; Berg, Jeremy M.; Spencer, Thomas A.; Ball, Judith; Kier, Ann B.; Schroeder, Friedhelm

2008-01-01

Although sterol carrier protein-2 (SCP-2) is encoded as a precursor protein (proSCP-2), little is known regarding the structure and function of the 20-amino acid N-terminal presequence. As shown herein, the presequence contains significant secondary structure and alters SCP-2: (i) secondary structure (CD), (ii) tertiary structure (aqueous exposure of Trp shown by UV absorbance, fluorescence, fluorescence quenching), (iii) ligand binding site [Trp response to ligands, peptide cross-linked by photoactivatable free cholesterol (FCBP)], (iv) selectivity for interaction with anionic phospholipid-rich membranes, (v) interaction with a peroxisomal import protein [FRET studies of Pex5p(C) binding], the N-terminal presequence increased SCP-2’s affinity for Pex5p(C) by 10-fold, and (vi) intracellular targeting in living and fixed cells (confocal microscopy). Nearly 5-fold more SCP-2 than proSCP-2 colocalized with plasma membrane lipid rafts/caveolae (AF488-CTB), 2.8-fold more SCP-2 than proSCP-2 colocalized with a mitochondrial marker (Mitotracker), but nearly 2-fold less SCP-2 than proSCP-2 colocalized with peroxisomes (AF488-antibody to PMP70). These data indicate the importance of the N-terminal presequence in regulating SCP-2 structure, cholesterol localization within the ligand binding site, membrane association, and, potentially, intracellular targeting. PMID:18465878

Study on optical emission analysis of AC air water discharges under He, Ar and N2 environments

NASA Astrophysics Data System (ADS)

Park, J. Y.; Kostyuk, P. V.; Han, S. B.; Kim, J. S.; Vu, C. N.; Lee, H. W.

2006-09-01

In this paper, hybrid air-water discharges were used to develop an optimal condition for providing a high level of water decomposition for hydrogen evolution. Electrical and optical phenomena accompanying the discharges were investigated along with feeding gases, flow rates and point-to-plane electrode gap distance. The experiments were primarily focused on the optical emission of the near UV range, providing a sufficient energy threshold for water dissociation and excitation. The OH(A 2Σ+ → X 2Π, Δν = 0) band optical emission intensity indicated the presence of plasma chemical reactions involving hydrogen formation. Despite the fact that energy input was high, the OH(A-X) optical emission was found to be negligible at the zero gap distance between the tip of the metal rod and water surface. In the gas atmosphere saturated with water vapour the OH(A-X) intensity was relatively high compared with the liquid and transient phases although the optical emission strongly depended on the flow rate and type of feeding gas. The gas phase was found to be more favourable because of less energy consumption in the cases of He and Ar carrier gases, and quenching mechanisms of oxygen in the N2 carrier gas atmosphere, preventing hydrogen from recombining with oxygen. In the gas phase the discharge was at a steady state, in contrast to the other phases, in which bubbles interrupted propagation of the plasma channel. Optical emission intensity of OH(A-X) band increased according to the flow rate or residence time of the He feeding gas. Nevertheless, a reciprocal tendency was acquired for N2 and Ar carrier gases. The peak value of OH(A-X) band optical emission intensity was observed near the water surface; however in the cases of Ar and N2 with a 0.5 SLM flow rate, it was shifted below the water surface. Rotational temperature was estimated to be in the range of 900-3600 K, according to the carrier gas and flow rate, which is sufficient for hydrogen production.

High-performance multilayer WSe 2 field-effect transistors with carrier type control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pudasaini, Pushpa Raj; Oyedele, Akinola; Zhang, Cheng

In this paper, high-performance multilayer WSe 2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe 2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe 2 thickness. The carrier type evolves with increasing WSe 2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe 2 as a function of the thickness and the carrier band offsets relative to the metalmore » contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. Finally, this work demonstrates progress towards the realization of high-performance multilayer WSe 2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.« less

High-performance multilayer WSe 2 field-effect transistors with carrier type control

DOE PAGES

Pudasaini, Pushpa Raj; Oyedele, Akinola; Zhang, Cheng; ...

2017-07-06

In this paper, high-performance multilayer WSe 2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe 2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe 2 thickness. The carrier type evolves with increasing WSe 2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe 2 as a function of the thickness and the carrier band offsets relative to the metalmore » contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. Finally, this work demonstrates progress towards the realization of high-performance multilayer WSe 2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.« less

The contamination of commercial 15N2 gas stocks with 15N-labeled nitrate and ammonium and consequences for nitrogen fixation measurements.

PubMed

Dabundo, Richard; Lehmann, Moritz F; Treibergs, Lija; Tobias, Craig R; Altabet, Mark A; Moisander, Pia H; Granger, Julie

2014-01-01

We report on the contamination of commercial 15-nitrogen (15N) N2 gas stocks with 15N-enriched ammonium, nitrate and/or nitrite, and nitrous oxide. 15N2 gas is used to estimate N2 fixation rates from incubations of environmental samples by monitoring the incorporation of isotopically labeled 15N2 into organic matter. However, the microbial assimilation of bioavailable 15N-labeled N2 gas contaminants, nitrate, nitrite, and ammonium, is liable to lead to the inflation or false detection of N2 fixation rates. 15N2 gas procured from three major suppliers was analyzed for the presence of these 15N-contaminants. Substantial concentrations of 15N-contaminants were detected in four Sigma-Aldrich 15N2 lecture bottles from two discrete batch syntheses. Per mole of 15N2 gas, 34 to 1900 µmoles of 15N-ammonium, 1.8 to 420 µmoles of 15N-nitrate/nitrite, and ≥21 µmoles of 15N-nitrous oxide were detected. One 15N2 lecture bottle from Campro Scientific contained ≥11 µmoles of 15N-nitrous oxide per mole of 15N2 gas, and no detected 15N-nitrate/nitrite at the given experimental 15N2 tracer dilutions. Two Cambridge Isotopes lecture bottles from discrete batch syntheses contained ≥0.81 µmoles 15N-nitrous oxide per mole 15N2, and trace concentrations of 15N-ammonium and 15N-nitrate/nitrite. 15N2 gas equilibrated cultures of the green algae Dunaliella tertiolecta confirmed that the 15N-contaminants are assimilable. A finite-differencing model parameterized using oceanic field conditions typical of N2 fixation assays suggests that the degree of detected 15N-ammonium contamination could yield inferred N2 fixation rates ranging from undetectable, <0.01 nmoles N L(-1) d(-1), to 530 nmoles N L(-1) d(-1), contingent on experimental conditions. These rates are comparable to, or greater than, N2 fixation rates commonly detected in field assays. These results indicate that past reports of N2 fixation should be interpreted with caution, and demonstrate that the purity of commercial 15N2

Improved Differential Ion Mobility Separations Using Linked Scans of Carrier Gas Composition and Compensation Field

NASA Astrophysics Data System (ADS)

Santiago, Brandon G.; Harris, Rachel A.; Isenberg, Samantha L.; Ridgeway, Mark E.; Pilo, Alice L.; Kaplan, Desmond A.; Glish, Gary L.

2015-07-01

Differential ion mobility spectrometry (DIMS) separates ions based on differences in their mobilities in low and high electric fields. When coupled to mass spectrometric analyses, DIMS has the ability to improve signal-to-background by eliminating isobaric and isomeric compounds for analytes in complex mixtures. DIMS separation power, often measured by resolution and peak capacity, can be improved through increasing the fraction of helium in the nitrogen carrier gas. However, because the mobility of ions is higher in helium, a greater number of ions collide with the DIMS electrodes or housing, yielding losses in signal intensity. To take advantage of the benefits of helium addition on DIMS separations and reduce ion losses, linked scans were developed. In a linked scan the helium content of the carrier gas is reduced as the compensation field is increased. Linked scans were compared with conventional compensation field scans with constant helium content for the protein ubiquitin and a tryptic digest of bovine serum albumin (BSA). Linked scans yield better separation of ubiquitin charge states and enhanced peak capacities for the analysis of BSA compared with compensation field scans with constant helium carrier gas percentages. Linked scans also offer improved signal intensity retention in comparison to compensation field scans with constant helium percentages in the carrier gas.

Use of hydrogen as a carrier gas for the analysis of steroids with anabolic activity by gas chromatography-mass spectrometry.

PubMed

Muñoz-Guerra, J A; Prado, P; García-Tenorio, S Vargas

2011-10-14

Due to the impact in the media and the requirements of sensitivity and robustness, the detection of the misuse of forbidden substances in sports is a really challenging area for analytical chemistry, where any study focused on enhancing the performance of the analytical methods will be of great interest. The aim of the present study was to evaluate the usefulness of using hydrogen instead of helium as a carrier gas for the analysis of anabolic steroids by gas chromatography-mass spectrometry with electron ionization. There are several drawbacks related with the use of helium as a carrier gas: it is expensive, is a non-renewable resource, and has limited availability in many parts of the world. In contrast, hydrogen is readily available using a hydrogen generator or high-pressure bottled gas, and allows a faster analysis without loss of efficiency; nevertheless it should not be forgotten that due to its explosiveness hydrogen must be handled with caution. Throughout the study the impact of the change of the carrier gas will be evaluated in terms of: performance of the chromatographic system, saving of time and money, impact on the high vacuum in the analyzer, changes in the fragmentation behaviour of the analytes, and finally consequences for the limits of detection achieved with the method. Copyright © 2011 Elsevier B.V. All rights reserved.

Radiative and Auger recombination of degenerate carriers in InN

NASA Astrophysics Data System (ADS)

McAllister, Andrew; Bayerl, Dylan; Kioupakis, Emmanouil

Group-III nitrides find applications in many fields - energy conversion, sensors, and solid-state lighting. The band gaps of InN, GaN and AlN alloys span the infrared to ultraviolet spectral range. However, nitride optoelectronic devices suffer from a drop in efficiency as carrier density increases. A major component of this decrease is Auger recombination, but its influence is not fully understood, particularly for degenerate carriers. For nondegenerate carriers the radiative rate scales as the carrier density squared, while the Auger rate scales as the density cubed. However, it is unclear how these power laws decrease as carriers become degenerate. Using first-principles calculations we studied the dependence of the radiative and Auger recombination rates on carrier density in InN. We found a more complex dependence on the Auger rate than expected. The power law of the Auger rate changes at different densities depending on the type of Auger process involved and the type of carriers that have become degenerate. In contrast, the power law of the radiative rate changes when either carrier type becomes degenerate. This creates problems in designing devices, as Auger remains a major contributor to carrier recombination at densities for which radiative recombination is suppressed by phase-space filling. This work was supported by NSF (GRFP DGE 1256260 and CAREER DMR-1254314). Computational resources provided by the DOE NERSC facility (DE-AC02-05CH11231).

Diffusion Monte Carlo simulations of gas phase and adsorbed D2-(H2)n clusters

NASA Astrophysics Data System (ADS)

Curotto, E.; Mella, M.

2018-03-01

We have computed ground state energies and analyzed radial distributions for several gas phase and adsorbed D2(H2)n and HD(H2)n clusters. An external model potential designed to mimic ionic adsorption sites inside porous materials is used [M. Mella and E. Curotto, J. Phys. Chem. A 121, 5005 (2017)]. The isotopic substitution lowers the ground state energies by the expected amount based on the mass differences when these are compared with the energies of the pure clusters in the gas phase. A similar impact is found for adsorbed aggregates. The dissociation energy of D2 from the adsorbed clusters is always much higher than that of H2 from both pure and doped aggregates. Radial distributions of D2 and H2 are compared for both the gas phase and adsorbed species. For the gas phase clusters, two types of hydrogen-hydrogen interactions are considered: one based on the assumption that rotations and translations are adiabatically decoupled and the other based on nonisotropic four-dimensional potential. In the gas phase clusters of sufficiently large size, we find the heavier isotopomer more likely to be near the center of mass. However, there is a considerable overlap among the radial distributions of the two species. For the adsorbed clusters, we invariably find the heavy isotope located closer to the attractive interaction source than H2, and at the periphery of the aggregate, H2 molecules being substantially excluded from the interaction with the source. This finding rationalizes the dissociation energy results. For D2-(H2)n clusters with n ≥12 , such preference leads to the desorption of D2 from the aggregate, a phenomenon driven by the minimization of the total energy that can be obtained by reducing the confinement of (H2)12. The same happens for (H2)13, indicating that such an effect may be quite general and impact on the absorption of quantum species inside porous materials.

Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

NASA Astrophysics Data System (ADS)

Niu, Wei; Gan, Yulin; Zhang, Yu; Valbjørn Christensen, Dennis; von Soosten, Merlin; Wang, Xuefeng; Xu, Yongbing; Zhang, Rong; Pryds, Nini; Chen, Yunzhong

2017-07-01

The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel γ-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1015 cm-2. Herein, we report on the patterning of 2DEG at the γ-Al2O3/SrTiO3 interface grown at 650 °C by pulsed laser deposition using a hard mask of LaMnO3. The patterned 2DEG exhibits a critical thickness of 2 unit cells of γ-Al2O3 for the occurrence of interface conductivity, similar to the unpatterned sample. However, its maximum carrier density is found to be approximately 3 × 1013 cm-2, much lower than that of the unpatterned sample (˜1015 cm-2). Remarkably, a high electron mobility of approximately 3600 cm2 V-1 s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of ˜7 × 1012 cm-2, which exhibits clear Shubnikov-de Haas quantum oscillations. The patterned high-mobility 2DEG at the γ-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devices.

Effect of Anesthesia Carrier Gas on In-Vivo Circulation Times of Ultrasound Microbubble Contrast Agents in Rats

PubMed Central

Mullin, Lee; Gessner, Ryan; Kwan, James; Kaya, Mehmet; Borden, Mark A.; Dayton, Paul A.

2012-01-01

Purpose Microbubble contrast agents are currently implemented in a variety of both clinical and preclinical ultrasound imaging studies. The therapeutic and diagnostic capabilities of these contrast agents are limited by their short in-vivo lifetimes, and research to lengthen their circulation times is ongoing. In this manuscript, observations are presented from a controlled experiment performed to evaluate differences in circulation times for lipid shelled perfluorocarbon-filled contrast agents circulating within rodents as a function of inhaled anesthesia carrier gas. Methods The effects of two common anesthesia carrier gas selections - pure oxygen and medical air – were observed within five rats. Contrast agent persistence within the kidney was measured and compared for oxygen and air anesthesia carrier gas for six bolus contrast injections in each animal. Simulations were performed to examine microbubble behavior with changes in external environment gases. Results A statistically significant extension of contrast circulation time was observed for animals breathing medical air compared to breathing pure oxygen. Simulations support experimental observations and indicate that enhanced contrast persistence may be explained by reduced ventilation/perfusion mismatch and classical diffusion, in which nitrogen plays a key role by contributing to the volume and diluting other gas species in the microbubble gas core. Conclusion: Using medical air in place of oxygen as the carrier gas for isoflurane anesthesia can increase the circulation lifetime of ultrasound microbubble contrast agents. PMID:21246710

Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements

NASA Astrophysics Data System (ADS)

Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Okur, Serdal; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2014-02-01

Carrier transport in double heterostructure (DH) InGaN light emitting diodes (LEDs) was investigated using photocurrent measurements performed under CW HeCd laser (325 nm wavelength) excitation. The effect of electron injector thicknesses was investigated by monitoring the excitation density and applied bias dependent escape of photogenerated carriers from the active region and through energy band structure and carrier transport simulations using Silvaco Atlas. For quad (4x) 3-nm DH LED structures incorporating staircase electron injectors (SEIs), photocurrent increased with SEI thickness due to reduced effective barrier opposing carrier escape from the active region as confirmed by simulations. The carrier leakage percentile at -3V bias and 280 Wcm-2 optical excitation density increased from 24 % to 55 % when In 0.04Ga0.96N + In0.08Ga0.92N SEI thickness was increased from 4 nm + 4 nm to 30 nm + 30 nm. The increased leakage with thicker SEI correlates with increased carrier overflow under forward bias.

Carrier dynamics and the role of surface defects: Designing a photocatalyst for gas-phase CO 2 reduction

DOE PAGES

Hoch, Laura B.; Szymanski, Paul; Ghuman, Kulbir Kaur; ...

2016-11-28

In 2O 3-x(OH) y nanoparticles have been shown to function as an effective gas-phase photocatalyst for the reduction of CO 2 to CO via the reverse water–gas shift reaction. Their photocatalytic activity is strongly correlated to the number of oxygen vacancy and hydroxide defects present in the system. To better understand how such defects interact with photogenerated electrons and holes in these materials, we have studied the relaxation dynamics of In 2O 3-x(OH) y nanoparticles with varying concentration of defects using two different excitation energies corresponding to above-band-gap (318-nm) and near-band-gap (405-nm) excitations. Our results demonstrate that defects play amore » significant role in the excited-state, charge relaxation pathways. Higher defect concentrations result in longer excited-state lifetimes, which are attributed to improved charge separation. This correlates well with the observed trends in the photocatalytic activity. These results are further supported by density-functional theory calculations, which confirm the positions of oxygen vacancy and hydroxide defect states within the optical band gap of indium oxide. This enhanced understanding of the role these defects play in determining the optoelectronic properties and charge carrier dynamics can provide valuable insight toward the rational development of more efficient photocatalytic materials for CO 2 reduction.« less

Carrier dynamics and the role of surface defects: Designing a photocatalyst for gas-phase CO 2 reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoch, Laura B.; Szymanski, Paul; Ghuman, Kulbir Kaur

In 2O 3-x(OH) y nanoparticles have been shown to function as an effective gas-phase photocatalyst for the reduction of CO 2 to CO via the reverse water–gas shift reaction. Their photocatalytic activity is strongly correlated to the number of oxygen vacancy and hydroxide defects present in the system. To better understand how such defects interact with photogenerated electrons and holes in these materials, we have studied the relaxation dynamics of In 2O 3-x(OH) y nanoparticles with varying concentration of defects using two different excitation energies corresponding to above-band-gap (318-nm) and near-band-gap (405-nm) excitations. Our results demonstrate that defects play amore » significant role in the excited-state, charge relaxation pathways. Higher defect concentrations result in longer excited-state lifetimes, which are attributed to improved charge separation. This correlates well with the observed trends in the photocatalytic activity. These results are further supported by density-functional theory calculations, which confirm the positions of oxygen vacancy and hydroxide defect states within the optical band gap of indium oxide. This enhanced understanding of the role these defects play in determining the optoelectronic properties and charge carrier dynamics can provide valuable insight toward the rational development of more efficient photocatalytic materials for CO 2 reduction.« less

47 CFR Figure 4 to Subpart N of... - Example of EPIRB Carrier Component

Code of Federal Regulations, 2011 CFR

2011-10-01

... 47 Telecommunication 1 2011-10-01 2011-10-01 false Example of EPIRB Carrier Component 4 Figure 4 to Subpart N of Part 2 Telecommunication FEDERAL COMMUNICATIONS COMMISSION GENERAL FREQUENCY... Emergency Position Indicating Radiobeacons (EPIRBs) Pt. 2, Subpt. N, Fig. 4 Figure 4 to Subpart N of Part 2...

47 CFR Figure 4 to Subpart N of... - Example of EPIRB Carrier Component

Code of Federal Regulations, 2010 CFR

2010-10-01

... 47 Telecommunication 1 2010-10-01 2010-10-01 false Example of EPIRB Carrier Component 4 Figure 4 to Subpart N of Part 2 Telecommunication FEDERAL COMMUNICATIONS COMMISSION GENERAL FREQUENCY... Emergency Position Indicating Radiobeacons (EPIRBs) Pt. 2, Subpt. N, Fig. 4 Figure 4 to Subpart N of Part 2...

Desflurane usage during anesthesia with and without N2O using FLOW-i Automatic Gas Control with three different wash-in speeds.

PubMed

De Medts, Robrecht; Carette, Rik; De Wolf, Andre M; Hendrickx, Jan F A

2017-06-09

AGC ® (Automatic Gas Control) is the FLOW-i's automated low flow tool (Maquet, Solna, Sweden) that target controls the inspired O 2 (F I O 2 ) and end-expired desflurane concentration (F A des) while (by design) exponentially decreasing fresh gas flow (FGF) during wash-in to a maintenance default FGF of 300 mL min -1 . It also offers a choice of wash-in speeds for the inhaled agents. We examined AGC performance and hypothesized that the use of lower wash-in speeds and N 2 O both reduce desflurane usage (Vdes). After obtaining IRB approval and patient consent, 78 ASA I-II patients undergoing abdominal surgery were randomly assigned to 1 of 6 groups (n = 13 each), depending on carrier gas (O 2 /air or O 2 /N 2 O) and wash-in speed (AGC speed 2, 4, or 6) of desflurane, resulting in groups air/2, air/4, air/6, N 2 O/2, N 2 O/4, and N 2 O/6. The target for F I O 2 was set at 35%, while the F A des target was selected so that the AGC displayed 1.3 MAC (corrected for the additive affect of N 2 O if used). AGC was activated upon starting mechanical ventilation. Varvel's criteria were used to describe performance of achieving the targets. Patient demographics, end-expired N 2 O concentration, MAC, FGF, and Vdes were compared using ANOVA. Data are presented as mean ± standard deviation, except for Varvel's criteria (median ± quartiles). Patient demographics did not differ among the groups. Median performance error was -2-0% for F I O 2 and -3-1% for F A des; median absolute performance error was 1-2% for F I O 2 and 0-3% for F A des. MAC increased faster in N 2 O groups, but total MAC decreased 0.1-0.25 MAC below that in the O 2 /air groups after 60 min. The effect of wash-in speed on Vdes faded over time. N 2 O decreased Vdes by 62%. AGC performance for O 2 and desflurane targeting is excellent. After 1 h, the wash-in speeds tested are unlikely to affect desflurane usage. N 2 O usage decreases Vdes proportionally with its reduction in F A tdes.

Ultrafast carrier dynamics in GaN/InGaN multiple quantum wells nanorods

NASA Astrophysics Data System (ADS)

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2018-01-01

GaN/InGaN multiple quantum wells (MQW) is a promising material for high-efficiency solid-state lighting. Ultrafast optical pump-probe spectroscopy is an important characterization technique for examining fundamental phenomena in semiconductor nanostructure with sub-picosecond resolution. In this study, ultrafast exciton and charge carrier dynamics in GaN/InGaN MQW planar layer and nanorod are investigated using femtosecond transient absorption (TA) techniques at room temperature. Here nanorods are fabricated by etching the GaN/InGaN MQW planar layers using nanosphere lithography and reactive ion etching. Photoluminescence efficiency of the nanorods have been proved to be much higher than that of the planar layers, but the mechanism of the nanorod structure improvement of PL efficiency is not adequately studied. By comparing the TA profile of the GaN/InGaN MQW planar layers and nanorods, the impact of surface states and nanorods lateral confinement in the ultrafast carrier dynamics of GaN/InGaN MQW is revealed. The nanorod sidewall surface states have a strong influence on the InGaN quantum well carrier dynamics. The ultrafast relaxation processes studied in this GaN/InGaN MQW nanostructure is essential for further optimization of device application.

Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Rashidi, Arman; Aragon, Andrew; Oh, Sang H.; Nami, Mohsen; DenBaars, Steve P.; Feezell, Daniel

2017-08-01

We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar $(20\\bar 2\\bar 1)$ InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier lifetime is analyzed for various injection current densities from 5 $A/cm^2$ to 10 $kA/cm^2$, and the corresponding carrier densities are obtained. The coupling of internal quantum efficiency and differential carrier lifetime vs injected carrier density ($n$) enables the separation of the radiative and nonradiative recombination lifetimes and the extraction of the Shockley-Read-Hall (SRH) nonradiative ($A$), radiative ($B$), and Auger ($C$) recombination coefficients and their $n$-dependency considering the saturation of the SRH recombination rate and phase-space filling. The results indicate a three to four-fold higher $A$ and a nearly two-fold higher $B_0$ for this semipolar orientation compared to that of $c$-plane reported using a similar approach [A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010)]. In addition, the carrier density in semipolar $(20\\bar 2\\bar 1)$ is found to be lower than the carrier density in $c$-plane for a given current density, which is important for suppressing efficiency droop. The semipolar LED also shows a two-fold lower $C_0$ compared to $c$-plane, which is consistent with the lower relative efficiency droop for the semipolar LED (57% vs. 69%). The lower carrier density, higher $B_0$ coefficient, and lower $C_0$ (Auger) coefficient are directly responsible for the high efficiency and low efficiency droop reported in semipolar $(20\\bar 2\\bar 1)$ LEDs.

Mechanism of Carrier Transport in Hybrid GaN/AlN/Si Solar Cells

NASA Astrophysics Data System (ADS)

Ekinci, Huseyin; Kuryatkov, Vladimir V.; Gherasoiu, Iulian; Karpov, Sergey Y.; Nikishin, Sergey A.

2017-10-01

The particularities of the carrier transport in p- n-GaN/ n-AlN/ p- n-Si and n-GaN/ n-AlN /p- n-Si structures were investigated through temperature-dependent current density and forward voltage ( J- V) measurements, carrier distribution, and transport modeling. Despite the insulating properties of AlN, reasonably high current densities were achieved under forward bias. The experimental relationship between the current density and forward voltage was accurately approximated by an expression accounting for space-charge-limited current in the AlN layer and non-linear characteristics of the p- n junction formed in silicon. We suggest that extended defects throughout the AlN volume are responsible for the conduction, although the limited data available do not allow the accurate identification of the type of these defects.

High Thermoelectric Power Factor of High‐Mobility 2D Electron Gas

PubMed Central

Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi

2017-01-01

Abstract Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower (S), high electrical conductivity (σ), and low thermal conductivity (κ). State‐of‐the‐art nanostructuring techniques that significantly reduce κ have realized high‐performance thermoelectric materials with a figure of merit (ZT = S 2∙σ∙T∙κ−1) between 1.5 and 2. Although the power factor (PF = S 2∙σ) must also be enhanced to further improve ZT, the maximum PF remains near 1.5–4 mW m−1 K−2 due to the well‐known trade‐off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal‐oxide‐semiconductor high electron mobility transistor (MOS‐HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS‐HEMT simultaneously modulates S and σ of the high‐mobility electron gas from −490 µV K−1 and ≈10−1 S cm−1 to −90 µV K−1 and ≈104 S cm−1, while maintaining a high carrier mobility (≈1500 cm2 V−1 s−1). The maximized PF of the high‐mobility electron gas is ≈9 mW m−1 K−2, which is a two‐ to sixfold increase compared to state‐of‐the‐art practical thermoelectric materials. PMID:29375980

High Thermoelectric Power Factor of High-Mobility 2D Electron Gas.

PubMed

Ohta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu

2018-01-01

Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower ( S ), high electrical conductivity (σ), and low thermal conductivity (κ). State-of-the-art nanostructuring techniques that significantly reduce κ have realized high-performance thermoelectric materials with a figure of merit ( ZT = S 2 ∙σ∙ T ∙κ -1 ) between 1.5 and 2. Although the power factor (PF = S 2 ∙σ) must also be enhanced to further improve ZT , the maximum PF remains near 1.5-4 mW m -1 K -2 due to the well-known trade-off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and σ of the high-mobility electron gas from -490 µV K -1 and ≈10 -1 S cm -1 to -90 µV K -1 and ≈10 4 S cm -1 , while maintaining a high carrier mobility (≈1500 cm 2 V -1 s -1 ). The maximized PF of the high-mobility electron gas is ≈9 mW m -1 K -2 , which is a two- to sixfold increase compared to state-of-the-art practical thermoelectric materials.

Fundamental Insulation Characteristics of Air, N2, CO2, N2/O2 and SF6/N2 Mixed Gases

NASA Astrophysics Data System (ADS)

Rokunohe, Toshiaki; Yagihashi, Yoshitaka; Endo, Fumihiro; Oomori, Takashi

SF6 gas has excellent dielectric strength and interruption performance. For these reasons, it has been widely used for gas insulated switchgear (GIS). However, use of SF6 gas has become regulated under agreements set at the 1997 COP3. Presently, development of a gas circuit breaker (GCB) using CO2 gas and development of a high voltage vacuum circuit breaker (VCB) are being pursued. GIS consists of disconnectors (DS), earthing switches (ES) and buses in addition to GCB. Since the interruption performance is not an important requirement for DS, ES and BUS, use of a gas with high dielectric strength is better than use of a gas with good interruption performance. Air and N2 are not greenhouse gases, and their dielectric strengths are higher than those of other SF6 alternative gases, but only about one-third of the dielectric strength of SF6 gas. This paper deals with a suitable insulation gas which has no greenhouse effect as an SF6 alternative gas. The N2/O2 mixed gas was investigated by changing the ratio of O2. Moreover, the effect of an insulation coating was investigated and compared with the dielectric strength of SF6/N2 mixed gas. The dielectric strength of air under the coating condition was equal to that of 10%SF6/N2 mixed gas.

Influence of Gas Adsorption and Gold Nanoparticles on the Electrical Properties of CVD-Grown MoS2 Thin Films.

PubMed

Cho, Yunae; Sohn, Ahrum; Kim, Sujung; Hahm, Myung Gwan; Kim, Dong-Ho; Cho, Byungjin; Kim, Dong-Wook

2016-08-24

Molybdenum disulfide (MoS2) has increasingly attracted attention from researchers and is now one of the most intensively explored atomic-layered two-dimensional semiconductors. Control of the carrier concentration and doping type of MoS2 is crucial for its application in electronic and optoelectronic devices. Because the MoS2 layers are atomically thin, their transport characteristics may be very sensitive to ambient gas adsorption and the resulting charge transfer. We investigated the influence of the ambient gas (N2, H2/N2, and O2) choice on the resistance (R) and surface work function (WF) of trilayer MoS2 thin films grown via chemical vapor deposition. We also studied the electrical properties of gold (Au)-nanoparticle (NP)-coated MoS2 thin films; their R value was found to be 2 orders of magnitude smaller than that for bare samples. While the WF largely varied for each gas, R was almost invariant for both the bare and Au-NP-coated samples regardless of which gas was used. Temperature-dependent transport suggests that variable range hopping is the dominant mechanism for electrical conduction for bare and Au-NP-coated MoS2 thin films. The charges transferred from the gas adsorbates might be insufficient to induce measurable R change and/or be trapped in the defect states. The smaller WF and larger localization length of the Au-NP-coated sample, compared with the bare sample, suggest that more carriers and less defects enhanced conduction in MoS2.

Biological evaluation of N-2-hydroxypropyl trimethyl ammonium chloride chitosan as a carrier for the delivery of live Newcastle disease vaccine.

PubMed

Zhao, Kai; Sun, Yanwei; Chen, Gang; Rong, Guangyu; Kang, Hong; Jin, Zheng; Wang, Xiaohua

2016-09-20

Mucosal immune system plays a very important role in antiviral immune response. We prepared Newcastle disease viruses (NDV) encapsulated in N-2-hydroxypropyl trimethyl ammonium chloride chitosan (N-2-HACC) nanoparticles (NDV/La Sota-N-2-HACC-NPs) by an ionic cross linking method, and assessed the potential of N-2-HACC-NPs as a mucosal immune delivery carrier. The properties of the nanoparticles were determined by transmission electron microscopy, Zeta potential and particle size analysis, encapsulation efficiency and loading capacity. NDV/La Sota-N-2-HACC-NPs have regular spherical morphologies and high stability; with 303.88±49.8nm mean diameter, 45.77±0.75mV Zeta potential, 94.26±0.42% encapsulation efficiency and 54.06±0.21% loading capacity. In vitro release assay indicated that the release of NDV from NDV/La Sota-N-2-HACC-NPs is slow. The NDV/La Sota-N-2-HACC-NPs have good biological characteristics, very low toxicity and high level of safety. Additionally, specific pathogen-free chickens immunized with NDV/La Sota-N-2-HACC-NPs showed much stronger cellular, humoral and mucosal immune responses than commercial attenuated live Newcastle disease vaccine, and NDV/La Sota-N-2-HACC-NPs reached the sustainable release effect. Our study here provides a foundation for the further development of mucosal vaccines and drugs, and the N-2-HACC-NPs should be a potential drug delivery carrier with immense potential in medical applications. Copyright © 2016 Elsevier Ltd. All rights reserved.

NH3-free growth of GaN nanostructure on n-Si (1 1 1) substrate using a conventional thermal evaporation technique

NASA Astrophysics Data System (ADS)

Saron, K. M. A.; Hashim, M. R.; Farrukh, M. A.

2012-06-01

We have investigated the influence of carrier gas on grown gallium nitride (GaN) epitaxial layers deposited on n-Si (1 1 1) by a physical vapour deposition (PVD) via thermal evaporation of GaN powder at 1150 °C. The GaN nanostructures were grown at a temperature of 1050 °C for 60 min under various gases (N2, H2 mixed with N2, and Ar2) with absence of NH3. The morphology, structure, and optical properties (SEM) images showed that the morphology of GaN displayed various shapes of nanostructured depending on the type of carrier gas. X-ray diffraction (XRD) pattern showed that the GaN polycrystalline reveals a wurtzite-hexagonal structure with [0 0 1] crystal orientation. Raman spectra exhibited a red shift in peaks of E2 (high) as a result of tensile stress. Photoluminescence (PL) measurements showed two band emissions aside from the UV emission. The ultraviolet band gap of GaN nanostructure displayed a red shift as compared with the bulk GaN; this might be attributed to an increase in the defect and stress present in the GaN nanostructure. In addition, the observed blue and green-yellow emissions indicated defects due to the N vacancy and C impurity of the supplied gas. These results clearly indicated that the carrier gas, similar to the growth temperature, is one of the important parameters to control the quality of thermal evaporation (TE)-GaN epilayers.

Infrared photodissociation spectroscopy of M(N2)n(+) (M = Y, La, Ce; n = 7-8) in the gas phase.

PubMed

Xie, Hua; Shi, Lei; Xing, Xiaopeng; Tang, Zichao

2016-02-14

M(N2)n(+) (M = Y, La, Ce; n = 7-8) complexes have been studied by infrared photodissociation (IRPD) spectroscopy and density functional theory (DFT) calculations. The experimental results indicate that the N-N stretching vibrational frequencies are red-shifted from the gas-phase N2 value. The π back-donation is found to be a main contributor in these systems. IRPD spectra and DFT calculations reveal the coexistence of two isomers in the seven-coordinate M(N2)7(+) and eight-coordinate M(N2)8(+) complexes, respectively. The present studies on these metal-nitrogen complexes shed light on the interactions and coordinations toward N2 with transition and lanthanide metals.

Carrier lifetimes in polar InGaN-based LEDs

NASA Astrophysics Data System (ADS)

Wang, Lai; Jin, Jie; Hao, Zhibiao; Luo, Yi

2018-02-01

Measurement of carrier lifetime is very important to understand the physics in light-emitting diodes (LEDs), as it builds a link between carrier concentration and excitation power or current density. In this paper, we present our study on optical and electrical characterizations on carrier lifetimes in polar InGaN-based LEDs. First, a carrier rate equation model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves, wherein exciton recombination is replaced by bimolecular recombination, considering the influence of polarization field on electron-hole pairs. Then, nonradiative recombination and radiative recombination coefficients can be deduced from fitting and used to calculate the radiative recombination efficiency. By comparing with the temperature-dependent photoluminescence (TDPL) and power-dependent photoluminescence (PDPL), it is found these three methods provide the consistent results. Second, differential carrier lifetimes depending on injection current are measured in commercial near-ultraviolet (NUV), blue and green LEDs. It is found that carrier lifetime is longer in green one and shorter in NUV one, which is attributed to the influence of polarization-induced quantum confined Stark effect (QCSE). This result implies the carrier density is higher in green LED while lower NUV LED, even the injection current is the same. By ignoring Auger recombination and fitting the efficiency-current and carrier lifetime-current curves simultaneously, the dependence of injection efficiency on carrier concentration in different LED samples are plotted. The NUV LED, which has the shallowest InGaN quantum well, actually exhibits the most serious efficiency droop versus carrier concentration. Then, the approaches to overcome the efficiency droop are discussed.

Neuropsychological performance in LRRK2 G2019S carriers with Parkinson’s disease

PubMed Central

Alcalay, Roy N.; Mejia-Santana, Helen; Mirelman, Anat; Saunders-Pullman, Rachel; Raymond, Deborah; Palmese, Christina; Caccappolo, Elise; Ozelius, Laurie; Orr-Urtreger, Avi; Clark, Lorraine; Giladi, Nir; Bressman, Susan; Marder, Karen

2014-01-01

Background Ashkenazi Jewish (AJ) LRRK2 carriers are more likely to manifest the postural instability gait difficulty (PIGD) motor phenotype than non-carriers but perform similarly to non-carriers on cognitive screening tests. Objective To compare the cognitive profiles of AJ with Parkinson’s disease (PD) with and without LRRK2 G2019S mutations using a comprehensive neuropsychological battery. Methods We administered a neuropsychological battery to PD participants in the Michael J. Fox Foundation AJ consortium. Participants (n=236) from Beth Israel Medical Center, NY, Columbia University Medical Center, NY and Tel Aviv Medical Center, Israel included 116 LRRK2 G2019S carriers and 120 non-carriers. Glucocerbrosidase mutation carriers were excluded. We compared performance on each neuropsychological test between carriers and non-carriers. Participants in New York (n=112) were evaluated with the entire battery. Tel Aviv participants (n=124) were evaluated on attention, executive function and psychomotor speed tasks. The association between G2019S mutation status (predictor) and each neuropsychological test (outcome) was assessed using linear regression models adjusted for PIGD motor phenotype, site, sex, age, disease duration, education, Unified Parkinson’s Disease Rating Scale (UPDRS) Part III, levodopa equivalent dose, and Geriatric Depression Score (GDS). Results Carriers had longer disease duration (p<0.001) and were more likely to manifest the PIGD phenotype (p=0.024). In adjusted regression models, carriers performed better than non-carriers in Stroop Word Reading (p<0.001), Stroop Interference (p=0.011) and Category Fluency (p=0.026). Conclusion In AJ-PD, G2019S mutation status is associated with better attention (Stroop Word Reading), executive function (Stroop Interference) and language (Category Fluency) after adjustment for PIGD motor phenotype. PMID:25434972

Reactions of CH3SH and CH3SSCH3 with gas-phase hydrated radical anions (H2O)n(•-), CO2(•-)(H2O)n, and O2(•-)(H2O)n.

PubMed

Höckendorf, Robert F; Hao, Qiang; Sun, Zheng; Fox-Beyer, Brigitte S; Cao, Yali; Balaj, O Petru; Bondybey, Vladimir E; Siu, Chi-Kit; Beyer, Martin K

2012-04-19

The chemistry of (H(2)O)(n)(•-), CO(2)(•-)(H(2)O)(n), and O(2)(•-)(H(2)O)(n) with small sulfur-containing molecules was studied in the gas phase by Fourier transform ion cyclotron resonance mass spectrometry. With hydrated electrons and hydrated carbon dioxide radical anions, two reactions with relevance for biological radiation damage were observed, cleavage of the disulfide bond of CH(3)SSCH(3) and activation of the thiol group of CH(3)SH. No reactions were observed with CH(3)SCH(3). The hydrated superoxide radical anion, usually viewed as major source of oxidative stress, did not react with any of the compounds. Nanocalorimetry and quantum chemical calculations give a consistent picture of the reaction mechanism. The results indicate that the conversion of e(-) and CO(2)(•-) to O(2)(•-) deactivates highly reactive species and may actually reduce oxidative stress. For reactions of (H(2)O)(n)(•-) with CH(3)SH as well as CO(2)(•-)(H(2)O)(n) with CH(3)SSCH(3), the reaction products in the gas phase are different from those reported in the literature from pulse radiolysis studies. This observation is rationalized with the reduced cage effect in reactions of gas-phase clusters. © 2012 American Chemical Society

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hennig, J., E-mail: jonas.hennig@ovgu.de; Dadgar, A.; Witte, H.

2015-07-15

We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices.more » Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.« less

Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

NASA Astrophysics Data System (ADS)

Reddy, M. Siva Pratap; Puneetha, Peddathimula; Reddy, V. Rajagopal; Lee, Jung-Hee; Jeong, Seong-Hoon; Park, Chinho

2016-11-01

The temperature-dependent electrical properties and carrier transport mechanisms of tetramethylammonium hydroxide (TMAH)-treated Ni/Au/Al2O3/GaN metal-insulator-semiconductor (MIS) diodes have been investigated by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements. The experimental results reveal that the barrier height ( I- V) increases whereas the ideality factor decreases with increasing temperature. The TMAH-treated Ni/Au/Al2O3/GaN MIS diode showed nonideal behaviors which indicate the presence of a nonuniform distribution of interface states ( N SS) and effect of series resistance ( R S). The obtained R S and N SS were found to decrease with increasing temperature. Furthermore, it was found that different transport mechanisms dominated in the TMAH-treated Ni/Au/Al2O3/GaN MIS diode. At 150 K to 250 K, Poole-Frenkel emission (PFE) was found to be responsible for the reverse leakage, while Schottky emission (SE) was the dominant mechanism at high electric fields in the temperature range from 300 K to 400 K. Feasible energy band diagrams and possible carrier transport mechanisms for the TMAH-treated Ni/Au/Al2O3/GaN MIS diode are discussed based on PFE and SE.

Fluid simulation of species concentrations in capacitively coupled N2/Ar plasmas: Effect of gas proportion

NASA Astrophysics Data System (ADS)

Liang, Ying-Shuang; Liu, Gang-Hu; Xue, Chan; Liu, Yong-Xin; Wang, You-Nian

2017-05-01

A two-dimensional self-consistent fluid model and the experimental diagnostic are employed to investigate the dependencies of species concentrations on the gas proportion in the capacitive N2/Ar discharges operated at 60 MHz, 50 Pa, and 140 W. The results indicate that the N2/Ar proportion has a considerable impact on the species densities. As the N2 fraction increases, the electron density, as well as the Ar+ and Arm densities, decreases remarkably. On the contrary, the N2 + density is demonstrated to increase monotonically with the N2 fraction. Moreover, the N density is observed to increase significantly with the N2 fraction at the N2 fractions below 40%, beyond which it decreases slightly. The electrons are primarily generated via the electron impact ionization of the feed gases. The electron impact ionization of Ar essentially determines the Ar+ density. For the N2 + production, the charge transition process between the Ar+ ions and the feed gas N2 dominates at low N2 fraction, while the electron impact ionization of N2 plays the more important role at high N2 fraction. At any gas mixtures, more than 60% Arm atoms are generated through the radiative decay process from Ar(4p). The dissociation of the feed gas N2 by the excited Ar atoms and by the electrons is responsible for the N formation at low N2 fraction and high N2 fraction, respectively. To validate the simulation results, the floating double probe and the optical emission spectroscopy are employed to measure the total positive ion density and the emission intensity originating from Ar(4p) transitions, respectively. The results from the simulation show a qualitative agreement with that from the experiment, which indicates the reliable model.

Gas turbine structural mounting arrangement between combustion gas duct annular chamber and turbine vane carrier

DOEpatents

Wiebe, David J.; Charron, Richard C.; Morrison, Jay A.

2016-10-18

A gas turbine engine ducting arrangement (10), including: an annular chamber (14) configured to receive a plurality of discrete flows of combustion gases originating in respective can combustors and to deliver the discrete flows to a turbine inlet annulus, wherein the annular chamber includes an inner diameter (52) and an outer diameter (60); an outer diameter mounting arrangement (34) configured to permit relative radial movement and to prevent relative axial and circumferential movement between the outer diameter and a turbine vane carrier (20); and an inner diameter mounting arrangement (36) including a bracket (64) secured to the turbine vane carrier, wherein the bracket is configured to permit the inner diameter to move radially with the outer diameter and prevent axial deflection of the inner diameter with respect to the outer diameter.

Annual Greenhouse Gas (CO2, CH4, and N2O) Fluxes Via Ebullition from a Temperate Emergent Wetland

NASA Astrophysics Data System (ADS)

Mcnicol, G.; Sturtevant, C. S.; Knox, S. H.; Baldocchi, D. D.; Silver, W. L.

2014-12-01

Quantifying wetland greenhouse gas exchange is necessary to evaluate their potential for mitigating climate change via carbon sequestration. However measuring greenhouse gas fluxes of carbon dioxide (CO2), methane (CH4), and nitrous oxide (N2O) in wetlands is difficult due to high spatial and temporal variability, and multiple transport pathways of emission. Transport of biogenic soil gas via highly sporadic ebullition (bubbling) events is often ignored or quantified poorly in wetland greenhouse gas budgets, but can rapidly release large volumes of gas to the atmosphere. To quantify a robust annual ebullition flux we measured rates continuously for a year (2013-2014) using custom-built chambers deployed in a restored emergent wetland located in the Sacramento-San Joaquin Delta, CA. We combined ebullition flux rates with observations of gas concentrations to estimate annual ebullition emissions of CO2, CH4, and N2O and compare flux rates to whole-ecosystem exchange of CO2 and CH4 measured simultaneously by eddy covariance.Mean ebullition flux rates were 18.3 ± 5.6 L m-2 yr-1. Ebullition CH4 concentrations were very high and ranged from 23-76 % with a mean of 47 ± 2.9 %; CO2 concentrations were lower and ranged from 0.7-6.6 % with a mean of 2.8 ± 0.3 %; N2O concentrations were below atmospheric concentrations and ranged from 130-389 ppb(v) with a mean of 257 ± 13 ppb(v). We calculated well-constrained annual ebullition fluxes of: 6.2 ± 1.9 g CH4 m-2 yr-1, 1.0 ± 0.3 g CO2 m-2 yr-1 and 9.3 ± 2.8 mg N2O m-2 yr-1. Methane emissions via ebullition were very large, representing 15-25 % of total wetland CH4 emissions measured at this site, whereas ebullition released only relatively small quantities of CO2 and N2O. Our results demonstrate that large releases of CH4 via ebullition from open water surfaces can be a significant component of restored wetland greenhouse gas budgets.

Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature.

PubMed

Abdullah, Q N; Yam, F K; Hassan, Z; Bououdina, M

2015-12-15

Superior sensitivity towards H2 gas was successfully achieved with Pt-decorated GaN nanowires (NWs) gas sensor. GaN NWs were fabricated via chemical vapor deposition (CVD) route. Morphology (field emission scanning electron microscopy and transmission electron microscopy) and crystal structure (high resolution X-ray diffraction) characterizations of the as-synthesized nanostructures demonstrated the formation of GaN NWs having a wurtzite structure, zigzaged shape and an average diameter of 30-166nm. The Pt-decorated GaN NWs sensor shows a high response of 250-2650% upon exposure to H2 gas concentration from 7 to 1000ppm respectively at room temperature (RT), and then increases to about 650-4100% when increasing the operating temperature up to 75°C. The gas-sensing measurements indicated that the Pt-decorated GaN NWs based sensor exhibited efficient detection of H2 at low concentration with excellent sensitivity, repeatability, and free hysteresis phenomena over a period of time of 100min. The large surface-to-volume ratio of GaN NWs and the catalytic activity of Pt metal are the most influential factors leading to the enhancement of H2 gas-sensing performances through the improvement of the interaction between the target molecules (H2) and the sensing NWs surface. The attractive low-cost, low power consumption and high-performance of the resultant decorated GaN NWs gas sensor assure their uppermost potential for H2 gas sensor working at low operating temperature. Copyright © 2015 Elsevier Inc. All rights reserved.

Quantifying N2O reduction to N2 based on N2O isotopocules - validation with independent methods (helium incubation and 15N gas flux method)

NASA Astrophysics Data System (ADS)

Lewicka-Szczebak, Dominika; Augustin, Jürgen; Giesemann, Anette; Well, Reinhard

2017-02-01

Stable isotopic analyses of soil-emitted N2O (δ15Nbulk, δ18O and δ15Nsp = 15N site preference within the linear N2O molecule) may help to quantify N2O reduction to N2, an important but rarely quantified process in the soil nitrogen cycle. The N2O residual fraction (remaining unreduced N2O, rN2O) can be theoretically calculated from the measured isotopic enrichment of the residual N2O. However, various N2O-producing pathways may also influence the N2O isotopic signatures, and hence complicate the application of this isotopic fractionation approach. Here this approach was tested based on laboratory soil incubations with two different soil types, applying two reference methods for quantification of rN2O: helium incubation with direct measurement of N2 flux and the 15N gas flux method. This allowed a comparison of the measured rN2O values with the ones calculated based on isotopic enrichment of residual N2O. The results indicate that the performance of the N2O isotopic fractionation approach is related to the accompanying N2O and N2 source processes and the most critical is the determination of the initial isotopic signature of N2O before reduction (δ0). We show that δ0 can be well determined experimentally if stable in time and then successfully applied for determination of rN2O based on δ15Nsp values. Much more problematic to deal with are temporal changes of δ0 values leading to failure of the approach based on δ15Nsp values only. For this case, we propose here a dual N2O isotopocule mapping approach, where calculations are based on the relation between δ18O and δ15Nsp values. This allows for the simultaneous estimation of the N2O-producing pathways' contribution and the rN2O value.

Controlled carrier screening in p-n NiO/GaN piezoelectric generators by an Al2O3 insertion layer

NASA Astrophysics Data System (ADS)

Johar, Muhammad Ali; Jeong, Dae Kyung; Afifi Hassan, Mostafa; Kang, Jin-Ho; Ha, Jun-Seok; Key Lee, June; Ryu, Sang-Wan

2017-12-01

The performance of a piezoelectric generator (PG) depends significantly on the internal screening process inside the device. As piezoelectric charges appear on both ends of the piezoelectric crystal, internal screening starts to decrease the piezoelectric bias. Therefore, the piezoelectric energy generated by external stress is not fully utilized by external circuit, which is the most challenging aspect of high-efficiency PGs. In this work, the internal screening effect of a NiO/GaN p-n PG was analyzed and controlled with an Al2O3 insertion layer. Internal screening in the p-n diode PG was categorized into free-carrier screening in neutral regions and junction screening due to charge drift across the junction. It was observed that junction screening could be significantly suppressed by inserting an Al2O3 layer and that effect was dominant in a leaky diode PG. With this implementation, the piezoelectric bias of the NiO/GaN PG was improved by a factor of ~100 for high-leakage diodes and a factor of ~1.6 for low-leakage diodes. Consequently, NiO/Al2O3/GaN PGs under a stress of 5 MPa provided a piezoelectric bias of 12.1 V and a current density of 2.25 µA cm-2. The incorporation of a highly resistive Al2O3 layer between p-NiO and n-GaN layers in NiO/GaN heterojunctions provides an efficient means of improving the piezoelectric performance by controlling the internal screening of the piezoelectric field.

Relaxation of heavy species and gas temperature in the afterglow of a N2 microwave discharge

NASA Astrophysics Data System (ADS)

Pintassilgo, Carlos D.; Guerra, Vasco

2017-10-01

In this paper we present a self-consistent kinetic model to study the temporal variation of the gas temperature in the afterglow of a 440 Pa microwave nitrogen discharge operating at 433 MHz in a 3.8 cm diameter tube. The initial conditions in the afterglow are determined by a kinetic model that solves the electron Boltzmann equation coupled to the gas thermal balance equation and a system of rate-balance equations for N2(X 1∑g+, v) molecules, electronically excited states of N2, ground and excited states of atomic nitrogen and the main positive ions. Once the initial concentrations of the heavy species and gas temperature are known, their relaxation in the afterglow is obtained from the solutions to the corresponding time-dependent equations. Modelling predictions are found to be in good agreement with previously measured values for the concentrations of N(4S) atoms and N2(A 3∑u+) molecules, and the radially averaged gas temperature Tg along the afterglow of a microwave discharge in N2 under the same working conditions. It is shown that gas heating in the afterglow comes essentially from the energy transfer involving non-resonant vibration-vibration (V-V) collisions between vibrationally excited nitrogen molecules, as well as from energy exchanges in vibration-translation (V-T) on N2-N collisions. Contribution to the topical issue "Plasma Sources and Plasma Processes (PSPP)", edited by Luis Lemos Alves, Thierry Belmonte and Tiberiu Minea

Greenhouse gas budget (CO2, CH4 and N2O) of intensively managed grassland following restoration.

PubMed

Merbold, Lutz; Eugster, Werner; Stieger, Jacqueline; Zahniser, Mark; Nelson, David; Buchmann, Nina

2014-06-01

The first full greenhouse gas (GHG) flux budget of an intensively managed grassland in Switzerland (Chamau) is presented. The three major trace gases, carbon dioxide (CO2), methane (CH4), and nitrous oxide (N2O) were measured with the eddy covariance (EC) technique. For CO2 concentrations, an open-path infrared gas analyzer was used, while N2O and CH4 concentrations were measured with a recently developed continuous-wave quantum cascade laser absorption spectrometer (QCLAS). We investigated the magnitude of these trace gas emissions after grassland restoration, including ploughing, harrowing, sowing, and fertilization with inorganic and organic fertilizers in 2012. Large peaks of N2O fluxes (20-50 nmol m(-2) s(-1) compared with a <5 nmol m(-2) s(-1) background) were observed during thawing of the soil after the winter period and after mineral fertilizer application followed by re-sowing in the beginning of the summer season. Nitrous oxide (N2O) fluxes were controlled by nitrogen input, plant productivity, soil water content and temperature. Management activities led to increased variations of N2O fluxes up to 14 days after the management event as compared with background fluxes measured during periods without management (<5 nmol m(-2) s(-1)). Fluxes of CO2 remained small until full plant development in early summer 2012. In contrast, methane emissions showed only minor variations over time. The annual GHG flux budget was dominated by N2O (48% contribution) and CO2 emissions (44%). CH4 flux contribution to the annual budget was only minor (8%). We conclude that recently developed multi-species QCLAS in an EC system open new opportunities to determine the temporal variation of N2O and CH4 fluxes, which further allow to quantify annual emissions. With respect to grassland restoration, our study emphasizes the key role of N2O and CO2 losses after ploughing, changing a permanent grassland from a carbon sink to a significant carbon source. © 2014 John Wiley & Sons Ltd.

Ultrafast carrier thermalization and cooling dynamics in few-layer MoS2.

PubMed

Nie, Zhaogang; Long, Run; Sun, Linfeng; Huang, Chung-Che; Zhang, Jun; Xiong, Qihua; Hewak, Daniel W; Shen, Zexiang; Prezhdo, Oleg V; Loh, Zhi-Heng

2014-10-28

Femtosecond optical pump-probe spectroscopy with 10 fs visible pulses is employed to elucidate the ultrafast carrier dynamics of few-layer MoS2. A nonthermal carrier distribution is observed immediately following the photoexcitation of the A and B excitonic transitions by the ultrashort, broadband laser pulse. Carrier thermalization occurs within 20 fs and proceeds via both carrier-carrier and carrier-phonon scattering, as evidenced by the observed dependence of the thermalization time on the carrier density and the sample temperature. The n(-0.37 ± 0.03) scaling of the thermalization time with carrier density suggests that equilibration of the nonthermal carrier distribution occurs via non-Markovian quantum kinetics. Subsequent cooling of the hot Fermi-Dirac carrier distribution occurs on the ∼ 0.6 ps time scale via carrier-phonon scattering. Temperature- and fluence-dependence studies reveal the involvement of hot phonons in the carrier cooling process. Nonadiabatic ab initio molecular dynamics simulations, which predict carrier-carrier and carrier-phonon scattering time scales of 40 fs and 0.5 ps, respectively, lend support to the assignment of the observed carrier dynamics.

A bubble-based microfluidic gas sensor for gas chromatographs.

PubMed

Bulbul, Ashrafuzzaman; Kim, Hanseup

2015-01-07

We report a new proof-of-concept bubble-based gas sensor for a gas chromatography system, which utilizes the unique relationship between the diameters of the produced bubbles with the gas types and mixture ratios as a sensing element. The bubble-based gas sensor consists of gas and liquid channels as well as a nozzle to produce gas bubbles through a micro-structure. It utilizes custom-developed software and an optical camera to statistically analyze the diameters of the produced bubbles in flow. The fabricated gas sensor showed that five types of gases (CO2, He, H2, N2, and CH4) produced (1) unique volumes of 0.44, 0.74, 1.03, 1.28, and 1.42 nL (0%, 68%, 134%, 191%, and 223% higher than that of CO2) and (2) characteristic linear expansion coefficients (slope) of 1.38, 2.93, 3.45, 5.06, and 5.44 nL/(kPa (μL s(-1))(-1)). The gas sensor also demonstrated that (3) different gas mixture ratios of CO2 : N2 (100 : 0, 80 : 20, 50 : 50, 20 : 80 and 0 : 100) generated characteristic bubble diameters of 48.95, 77.99, 71.00, 78.53 and 99.50 μm, resulting in a linear coefficient of 10.26 μm (μL s(-1))(-1). It (4) successfully identified an injection (0.01 μL) of pentane (C5) into a continuous carrier gas stream of helium (He) by monitoring bubble diameters and creating a chromatogram and demonstrated (5) the output stability within only 5.60% variation in 67 tests over a month.

Characteristics of surface-wave plasma with air-simulated N2 O2 gas mixture for low-temperature sterilization

NASA Astrophysics Data System (ADS)

Xu, L.; Nonaka, H.; Zhou, H. Y.; Ogino, A.; Nagata, T.; Koide, Y.; Nanko, S.; Kurawaki, I.; Nagatsu, M.

2007-02-01

Sterilization experiments using low-pressure air discharge plasma sustained by the 2.45 GHz surface-wave have been carried out. Geobacillus stearothermoplilus spores having a population of 3.0 × 106 were sterilized for only 3 min using air-simulated N2-O2 mixture gas discharge plasma, faster than the cases of pure O2 or pure N2 discharge plasmas. From the SEM analysis of plasma-irradiated spores and optical emission spectroscopy measurements of the plasmas, it has been found that the possible sterilization mechanisms of air-simulated plasma are the chemical etching effect due to the oxygen radicals and UV emission from the N2 molecules and NO radicals in the wavelength range 200-400 nm. Experiment suggested that UV emission in the wavelength range less than 200 nm might not be significant in the sterilization. The UV intensity at 237.0 nm originated from the NO γ system (A 2Σ+ → X 2Π) in N2-O2 plasma as a function of the O2 percentage added to N2-O2 mixture gas has been investigated. It achieved its maximum value when the O2 percentage was roughly 10-20%. This result suggests that air can be used as a discharge gas for sterilization, and indeed we have confirmed a rapid sterilization with the actual air discharge at a sample temperature of less than 65 °C.

Use of natural gas, methanol, and ethanol fuel emulsions as environmentally friendly energy carriers for mobile heat power plants

NASA Astrophysics Data System (ADS)

Likhanov, V. A.; Lopatin, O. P.

2017-12-01

The need for using environmentally friendly energy carriers for mobile heat power plants (HPPs) is grounded. Ecologically friendly sources of energy, such as natural gas as well as renewable methyl and ethyl alcohols, are investigated. In order to develop, determine, and optimize the composition of environmentally friendly energy carriers for an HPP, the latter has been tested when working on diesel fuel (DF), compressed natural gas (CNG), and methanol and ethanol fuel emulsions (MFE, EFE). It has been experimentally established that, for the application of environmentally friendly energy carriers for a 4Ch 11.0/12.5 diesel engine of a mobile fuel and power plant, it is necessary to maintain the following ratio of components when working on CNG: 80% gas and 20% DF primer portion. When working on an alcohol mixture, emulsions of the following composition were used: 25% alcohol (methanol or ethanol), 0.5% detergent-dispersant additive succinimide C-5A, 7% water, and 67.5% DF. When this diesel passed from oil DF to environmentally friendly energy sources, it allowed for the reduction of the content of exhaust gases (EG) (1) when working on CNG with recirculation of exhaust gases (EGR) (recirculation was used to eliminate the increased amount of nitric oxides by using CNG): carbon black by 5.8 times, carbon dioxide by 45.9%, and carbon monoxide by 23.8%; (2) when working on MFE: carbon black by 6.4 times, nitrogen oxides by 29.6%, carbon dioxide by 10.1%, and carbon oxide by 47.6%; (3) when working on EFE: carbon black by 4.8 times; nitrogen oxides by 40.3%, carbon dioxide by 26.6%, and carbon monoxide by 28.6%. The prospects of use of environmentally friendly energy carriers in diesels of mobile HPPs, such as natural gas, ethanol, and methanol, has been determined.

Enhancement of two dimensional electron gas concentrations due to Si{sub 3}N{sub 4} passivation on Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure: strain and interface capacitance analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dinara, Syed Mukulika, E-mail: smdinara.iit@gmail.com; Jana, Sanjay Kr.; Ghosh, Saptarsi

2015-04-15

Enhancement of two dimensional electron gas (2DEG) concentrations at Al{sub 0.3}Ga{sub 0.7}N/GaN hetero interface after a-Si{sub 3}N{sub 4} (SiN) passivation has been investigated from non-destructive High Resolution X-ray Diffraction (HRXRD) analysis, depletion depth and capacitance-voltage (C-V) profile measurement. The crystalline quality and strained in-plane lattice parameters of Al{sub 0.3}Ga{sub 0.7}N and GaN were evaluated from double axis (002) symmetric (ω-2θ) diffraction scan and double axis (105) asymmetric reciprocal space mapping (DA RSM) which revealed that the tensile strain of the Al{sub 0.3}Ga{sub 0.7}N layer increased by 15.6% after SiN passivation. In accordance with the predictions from theoretical solution of Schrödinger-Poisson’smore » equations, both electrochemical capacitance voltage (ECV) depletion depth profile and C-V characteristics analyses were performed which implied effective 9.5% increase in 2DEG carrier density after passivation. The enhancement of polarization charges results from increased tensile strain in the Al{sub 0.3}Ga{sub 0.7}N layer and also due to the decreased surface states at the interface of SiN/Al{sub 0.3}Ga{sub 0.7}N layer, effectively improving the carrier confinement at the interface.« less

Ultrafast carrier dynamics in a GaN/Al 0.18Ga0.82N superlattice

NASA Astrophysics Data System (ADS)

Mahler, Felix; Tomm, Jens W.; Reimann, Klaus; Woerner, Michael; Elsaesser, Thomas; Flytzanis, Christos; Hoffmann, Veit; Weyers, Markus

2018-04-01

Relaxation processes of photoexcited carriers in a GaN /Al0.18Ga0.82N superlattice are studied in femtosecond spectrally resolved reflectivity measurements at ambient temperature. The transient reflectivity reveals electron trapping into defect states close to the conduction-band minimum with a 150-200 fs time constant, followed by few-picosecond carrier cooling. A second slower trapping process into a different manifold of defect states is observed on a time scale of approximately 10 ps. Our results establish the prominent role of structural defects and disorder for ultrafast carrier dynamics in nitride semiconductor structures.

Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients.

PubMed

Monavarian, Morteza; Rashidi, Arman; Aragon, Andrew; Oh, Sang H; Nami, Mohsen; DenBaars, Steve P; Feezell, Daniel

2017-08-07

We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar (202¯1¯) InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier lifetime is analyzed for various injection current densities from 5 A/cm 2 to 10 kA/cm 2 , and the corresponding carrier densities are obtained. The coupling of internal quantum efficiency and differential carrier lifetime vs injected carrier density (n) enables the separation of the radiative and nonradiative recombination lifetimes and the extraction of the Shockley-Read-Hall (SRH) nonradiative (A), radiative (B), and Auger (C) recombination coefficients and their n-dependency considering the saturation of the SRH recombination rate and phase-space filling. The results indicate a three to four-fold higher A and a nearly two-fold higher B0 for this semipolar orientation compared to that of c-plane reported using a similar approach [A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010)]. In addition, the carrier density in semipolar (202¯1¯) is found to be lower than the carrier density in c-plane for a given current density, which is important for suppressing efficiency droop. The semipolar LED also shows a two-fold lower C0 compared to c-plane, which is consistent with the lower relative efficiency droop for the semipolar LED (57% vs. 69%). The lower carrier density, higher B 0 coefficient, and lower C 0 (Auger) coefficient are directly responsible for the high efficiency and low efficiency droop reported in semipolar (202¯1¯) LEDs.

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

NASA Astrophysics Data System (ADS)

Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Hultman, Lars; Sands, Timothy D.

2017-06-01

Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1-6) × 1020 cm-3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm-3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okur, Serdal; Nami, Mohsen; Rishinaramangalam, Ashwin K.

Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar (more » $$20\\bar{2}$$$\\bar{1}$$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($$20\\bar{2}$$$\\bar{1}$$) LEDs.« less

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

DOE PAGES

Okur, Serdal; Nami, Mohsen; Rishinaramangalam, Ashwin K.; ...

2017-01-26

Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar (more » $$20\\bar{2}$$$\\bar{1}$$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($$20\\bar{2}$$$\\bar{1}$$) LEDs.« less

Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence

NASA Astrophysics Data System (ADS)

Inagaki, Makoto; Suzuki, Hidetoshi; Suzuki, Akio; Mutaguchi, Kazumasa; Fukuyama, Atsuhiko; Kojima, Nobuaki; Ohshita, Yoshio; Yamagichi, Masafumi

2011-04-01

Shallow carrier trap levels in GaAs1-xNx (0.0010≤x≤0.0038) were investigated by photoluminescence (PL) and photoreflectance (PR) ranging from 4.2 to 300 K. The band gap energies of the GaAsN were clearly determined in the whole temperature range by the PR fitting analysis. It is clarified by peak decomposing that there were three emission peaks in the near-band-edge PL spectra of GaAsN. One of them was originated from band-to-band transition. The energies of two emission peaks were located at approximately 6 and 17 meV below the band edge. The existence of these peaks is evidence of carrier localization at the near-band-edge. The intensity ratio of the peak at the low energy side to other peaks increases with increasing N composition. This behavior is similar to the degradation of electrical properties.

Effect of the carrier gas flow rate on the microstructure evolution and the generation of the charged nanoparticles during silicon chemical vapor deposition.

PubMed

Youn, Woong-Kyu; Kim, Chan-Soo; Hwang, Nong-Moon

2013-10-01

The generation of charged nanoparticles in the gas phase has been continually reported in many chemical vapor deposition processes. Charged silicon nanoparticles in the gas phase were measured using a differential mobility analyzer connected to an atmospheric-pressure chemical vapor deposition reactor at various nitrogen carrier gas flow rates (300-1000 standard cubic centimeter per minute) under typical conditions for silicon deposition at the reactor temperature of 900 degrees C. The carrier gas flow rate affected not only the growth behavior of nanostructures but also the number concentration and size distribution of both negatively and positively charged nanoparticles. As the carrier gas flow rate decreased, the growth behavior changed from films to nanowires, which grew without catalytic metal nanoparticles on a quartz substrate.

Study of DC Circuit Breaker of H2-N2 Mixture Gas for High Voltage

NASA Astrophysics Data System (ADS)

Shiba, Yuji; Morishita, Yukinaga; Kaneko, Shuhei; Okabe, Shigemitsu; Mizoguchi, Hitoshi; Yanabu, Satoru

Global warming caused by CO2 etc. is a field where the concern is very high. Especially, automobile emissions are problem for it. Therefore, the hybrid car is widely development and used recently. Hybrid car used electric power and gasoline. So, the car reduces CO2. Hybrid car has engine and motor. To rotate the motor, hybrid car has battery. This battery is large capacity. Therefore, the relay should interrupt high DC current for the switch of the motor and the engine. So, hybrid car used hydrogen gas filling relay We studied interruption test for the research of a basic characteristic of hydrogen gas. DC current has not current zero point. So, it is necessary to make the current zero by high arc voltage and forcible current zero point. The loss coefficient and arc voltage of hydrogen is high. Therefore, we studied interruption test for used high arc voltage. We studied interruption test and dielectric breakdown test of air, pure Hydrogen, and Hydrogen- nitrogen mixture gas. As a result, we realized H2-N2(80%-20%) is the best gas.

Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S. M.

The issue of ambiguous values of the band gap (0.6 to 2 eV) of InN thin film in literature has been addressed by a careful experiment. We have grown wurtzite InN films by PA-MBE simultaneously on differently modified c-plane sapphire substrates and characterized by complementary structural and chemical probes. Our studies discount Mie resonances caused by metallic In segregation at grain boundaries as the reason for low band gap values ( Almost-Equal-To 0.6 eV) and also the formation of Indium oxides and oxynitrides as the cause for high band gap value ( Almost-Equal-To 2.0 eV). It is observed that polycrystallinitymore » arising from azimuthal miss-orientation of c-oriented wurtzite InN crystals increases the carrier concentration and the band gap values. We have reviewed the band gap, carrier concentration, and effective mass of InN in literature and our own measurements, which show that the Moss-Burstein relation with a non-parabolic conduction band accounts for the observed variation of band gap with carrier concentration.« less

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

NASA Astrophysics Data System (ADS)

Park, Youngsin; Chan, Christopher C. S.; Taylor, Robert A.; Kim, Nammee; Jo, Yongcheol; Lee, Seung W.; Yang, Woochul; Im, Hyunsik

2018-04-01

Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

The Contamination of Commercial 15N2 Gas Stocks with 15N–Labeled Nitrate and Ammonium and Consequences for Nitrogen Fixation Measurements

PubMed Central

Dabundo, Richard; Lehmann, Moritz F.; Treibergs, Lija; Tobias, Craig R.; Altabet, Mark A.; Moisander, Pia H.; Granger, Julie

2014-01-01

We report on the contamination of commercial 15-nitrogen (15N) N2 gas stocks with 15N-enriched ammonium, nitrate and/or nitrite, and nitrous oxide. 15N2 gas is used to estimate N2 fixation rates from incubations of environmental samples by monitoring the incorporation of isotopically labeled 15N2 into organic matter. However, the microbial assimilation of bioavailable 15N-labeled N2 gas contaminants, nitrate, nitrite, and ammonium, is liable to lead to the inflation or false detection of N2 fixation rates. 15N2 gas procured from three major suppliers was analyzed for the presence of these 15N-contaminants. Substantial concentrations of 15N-contaminants were detected in four Sigma-Aldrich 15N2 lecture bottles from two discrete batch syntheses. Per mole of 15N2 gas, 34 to 1900 µmoles of 15N-ammonium, 1.8 to 420 µmoles of 15N-nitrate/nitrite, and ≥21 µmoles of 15N-nitrous oxide were detected. One 15N2 lecture bottle from Campro Scientific contained ≥11 µmoles of 15N-nitrous oxide per mole of 15N2 gas, and no detected 15N-nitrate/nitrite at the given experimental 15N2 tracer dilutions. Two Cambridge Isotopes lecture bottles from discrete batch syntheses contained ≥0.81 µmoles 15N-nitrous oxide per mole 15N2, and trace concentrations of 15N-ammonium and 15N-nitrate/nitrite. 15N2 gas equilibrated cultures of the green algae Dunaliella tertiolecta confirmed that the 15N-contaminants are assimilable. A finite-differencing model parameterized using oceanic field conditions typical of N2 fixation assays suggests that the degree of detected 15N-ammonium contamination could yield inferred N2 fixation rates ranging from undetectable, <0.01 nmoles N L−1 d−1, to 530 nmoles N L−1 d−1, contingent on experimental conditions. These rates are comparable to, or greater than, N2 fixation rates commonly detected in field assays. These results indicate that past reports of N2 fixation should be interpreted with caution, and demonstrate that the purity of commercial 15N2

A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures

NASA Astrophysics Data System (ADS)

All Abbas, J. M.; Atmaca, G.; Narin, P.; Kutlu, E.; Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.

2017-08-01

Investigations of the effects of back-barrier introduction on the two-dimensional electron gas (2DEG) of ultrathin-barrier AlN/GaN heterostructures with AlGaN and InGaN back-barriers are carried out using self-consistent solutions of 1-dimensional Schrödinger-Poisson equations. Inserted AlGaN and InGaN back-barriers are used to provide a good 2DEG confinement thanks to raising the conduction band edge of GaN buffer with respect to GaN channel layer. Therefore, in this paper the influence of these back-barrier layers on sheet carrier density, 2DEG confinement, and mobility are systematically and comparatively investigated. As a result of calculations, although sheet carrier density is found to decrease with InGaN back-barrier layer, it is not changed with AlGaN back-barrier layer for suggested optimise heterostructures. Obtained results can give some insights for further experimental studies.

Effect of temperature on reduction of CaSO{sub 4} oxygen carrier in chemical-looping combustion of simulated coal gas in a fluidized bed reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Q.L.; Xiao, R.; Deng, Z.Y.

2008-12-15

Chemical-looping combustion (CLC) is a promising combustion technology for gaseous and solid fuel with efficient use of energy and inherent separation of CO{sub 2}. The concept of a coal-fueled CLC system using, calcium sulfate (CaSO{sub 4}) as oxygen carrier is proposed in this study. Reduction tests of CaSO{sub 4} oxygen carrier with simulated coal gas were performed in a laboratory-scale fluidized bed reactor in the temperature range of 890-950{degree}C. A high concentration of CO{sub 2} was obtained at the initial reduction period. CaSO{sub 4} oxygen carrier exhibited high reactivity initially and decreased gradually at the late period of reduction. Themore » sulfur release during the reduction of CaSO{sub 4} as oxygen carrier was also observed and analyzed. H{sub 2} and CO{sub 2} conversions were greatly influenced by reduction temperature. The oxygen carrier conversion and mass-based reaction rates during the reduction at typical temperatures were compared. Higher temperatures would enhance reaction rates and result in high conversion of oxygen carrier. An XRD patterns study indicated that CaS was the dominant product of reduction and the variation of relative intensity with temperature is in agreement with the solid conversion. ESEM analysis indicated that the surface structure of oxygen carrier particles changed significantly from impervious to porous after reduction. EDS analysis also demonstrated the transfer of oxygen from the oxygen carrier to the fuel gas and a certain amount of sulfur loss and CaO formation on the surface at higher temperatures. The reduction kinetics of CaSO{sub 4} oxygen carrier was explored with the shrinking unreacted-core model. The apparent kinetic parameters were obtained, and the kinetic equation well predicted the experimental data. Finally, some basic considerations on the use of CaSO{sub 4} oxygen carrier in a CLC system for solid fuels were discussed.« less

Effect of N2 flow during deposition on p-type ZnO film

NASA Astrophysics Data System (ADS)

Lin, Chiung-Wei; Liu, Bor-Chang

2017-01-01

In this study, the influence of a nitrogen source on p-type conductive ZnO films was studied. Rapid thermal oxidation was conducted to oxidize ZnN films and convert them to ZnO films. When an as-deposited ZnN film was prepared at a high nitrogen gas flow rate, the converted ZnO film possessed many acceptors and showed stable p-type conduction. This p-type conduction was attributed to the nitrogen gas flow providing many “No” states, which act as acceptors within the processed ZnO film. It was found that the as-deposited ZnN film prepared at a high nitrogen gas flow rate is oxidized slightly so that only a few nitrogen atoms were replaced by oxygen. The carrier concentration and mobility of the optimized oxidized ZnN film were 9.76 × 1017 cm-3 and 62.78 cm2 V-1 s-1, respectively. A good rectified current-voltage characteristic with a turn-on voltage of 3.65 V was achieved for the optimized ZnO:N/ZnO junction.

Ionization and current growth in N/sub 2/ at very high electric field to gas density ratios

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gylys, V.T.; Jelenkovic, B.M.; Phelps, A.V.

1989-05-01

Measurements and analyses have been made of electron impact ionization and of current growth in pulsed, low-current, prebreakdown discharges in parallel-plane geometry in N/sub 2/ at very high electric field to gas density ratios E/n and low products of the gas density n and electrode separation d. The E/n range and nd ranges were 1

Rationalizing long-lived photo-excited carriers in photocatalyst (La5Ti2CuS5O7) in terms of one-dimensional carrier transport

NASA Astrophysics Data System (ADS)

Suzuki, Yohichi; Singh, Rupashree Balia; Matsuzaki, Hiroyuki; Furube, Akihiro; Ma, Guijun; Hisatomi, Takashi; Domen, Kazunari; Seki, Kazuhiko

2016-09-01

The semiconductor La5Ti2CuS5O7 (LTC) is a potential photocatalyst capable of operating under visible light irradiation and behaves both as a photocathode and anode when embedded onto metal layers. Time-resolved diffuse reflectance (TRDR) measurements were carried out on LTC powder and LTC deposited on Au as the back contact using the particle-transfer method. Results of TRDR measurements of powdered LTC indicated the existence of long-lived photo-excited carriers, and suggested the existence of a mechanism for preventing carrier loss in LTC. Prior research has reported that LTC has a rod-shaped crystal structure and that electrons and holes are transported through different, spatially separated channels. Based on this, we introduced a one-dimensional carrier transport model. By analyzing TRDR data, we extracted material parameters such as the diffusion coefficient of LTC. Theoretical results indicated that a micron-sized LTC particle would be preferable if carriers trapped at the top-surface do contribute to photocatalytic gas generation.

Hydrogen-bonded ring closing and opening of protonated methanol clusters H(+)(CH3OH)(n) (n = 4-8) with the inert gas tagging.

PubMed

Li, Ying-Cheng; Hamashima, Toru; Yamazaki, Ryoko; Kobayashi, Tomohiro; Suzuki, Yuta; Mizuse, Kenta; Fujii, Asuka; Kuo, Jer-Lai

2015-09-14

The preferential hydrogen bond (H-bond) structures of protonated methanol clusters, H(+)(MeOH)n, in the size range of n = 4-8, were studied by size-selective infrared (IR) spectroscopy in conjunction with density functional theory calculations. The IR spectra of bare clusters were compared with those with the inert gas tagging by Ar, Ne, and N2, and remarkable changes in the isomer distribution with the tagging were found for clusters with n≥ 5. The temperature dependence of the isomer distribution of the clusters was calculated by the quantum harmonic superposition approach. The observed spectral changes with the tagging were well interpreted by the fall of the cluster temperature with the tagging, which causes the transfer of the isomer distribution from the open and flexible H-bond network types to the closed and rigid ones. Anomalous isomer distribution with the tagging, which has been recently found for protonated water clusters, was also found for H(+)(MeOH)5. The origin of the anomaly was examined by the experiments on its carrier gas dependence.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE PAGES

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra; ...

2017-10-23

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p-n junction nanowires

NASA Astrophysics Data System (ADS)

Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

2017-11-01

We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

Formation of Titanium Sulfide from Titanium Oxycarbonitride by CS2 Gas

NASA Astrophysics Data System (ADS)

Ahmadi, Eltefat; Yashima, Yuta; Suzuki, Ryosuke O.; Rezan, Sheikh Abdul

2018-05-01

Previously this group reported that a good quality titanium metal powder can be produced from titanium sulfides by electrochemical OS process. In this study, the sulfurization procedure was examined to synthesize titanium sulfide from titanium oxycarbonitride by CS2 gas. The experiments were carried out in the temperature range of 1173 K to 1523 K (900 °C to 1250 °C) in a tube reactor with continuously flowing argon (Ar) as carrier gas of CS2. The formation of titanium sulfide phases from the commercial TiN, TiC, and TiO powders was studied as the initial step. Then, TiO0.02C0.13N0.85 coming from ilmenite was sulfurized to prepare single phase of titanium sulfide. The products were characterized by X-ray diffraction, and the morphology of the sulfides was rigorously investigated, and the sulfur, oxygen, and carbon contents in the products were analyzed. The process was remarkably dependent on the temperature and time. TiN and TiO0.02C0.13N0.85 powders could be fully converted to the single phase of Ti2.45S4 (Ti2+x S4) at 1473 K (1200 °C) in 3.6 ks. The maximum weight gain of TiN sample was 55.3 pct indicating a full conversion of TiN to Ti2S3 phase. The carbon and oxygen contents in this sulfide prepared from the oxycarbonitride were about 1.8 wt pct C and 1.4 wt pct O, respectively. Therefore, the titanium sulfide could be a promising feedstock for the production of commercial grade titanium powder.

Multicycle study on chemical-looping combustion of simulated coal gas with a CaSO{sub 4} oxygen carrier in a fluidized bed reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qilei Song; Rui Xiao; Zhongyi Deng

2008-11-15

The cyclic test of a CaSO{sub 4}-based oxygen carrier (natural anhydrite) in alternating reducing simulated coal gas and oxidizing conditions was performed at 950{degree}C in a fluidized bed reactor at atmospheric pressure. A high concentration of CO{sub 2} was obtained in the reduction. The H{sub 2} and CO conversions and CO{sub 2} yield increased initially and final decreased significantly. The release of SO{sub 2} and H{sub 2}S during the cyclic test was found to be responsible for the decrease of reactivity of a CaSO{sub 4} oxygen carrier. The oxygen carrier conversion after the reduction reaction decreased gradually in the cyclicmore » test. Through the comparison of mass-based reaction rates as a function of mass conversion at typical cycles, it was also evident that the reactivity of a CaSO{sub 4} oxygen carrier increased for the initial cycles but finally decreased after around 15 cycles. X-ray diffraction analysis revealed that the presence and intensity of the reduction sulfur species was in accordance with the results of gas conversion. The content of CaO was higher than expected, suggesting the formation of SO{sub 2} and H{sub 2}S during the cycles. Surface morphology analysis demonstrates that the natural anhydrite particle surface varied from impervious to porous after the cyclic test. It was also observed that the small grains on the surface of the oxygen carrier sintered in the cyclic tests. Energy-dispersive spectrum analysis also demonstrated the decrease of oxygen intensity after reduction, and CaO became the main component after the 20th oxidation. Pore structure analysis suggested that the particles agglomerated or sintered in the cyclic tests. The possible method for sulfur mitigation is proposed. Finally, some basic consideration on the design criteria of a CLC system for solid fuels using a CaSO{sub 4} oxygen carrier is discussed by the references and provides direction for future work. 49 refs., 10 figs., 5 tabs.« less

Emission Spectroscopy of the 4X Source Discharge With and Without N 2 Gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, Horace Vernon

2016-01-14

This tech note summarizes the December, 1988 emission spectroscopy measurements made on the 4X source discharge with and without N₂ gas added to the H + Cs discharge. This study is motivated by the desire to understand why small amounts of N₂ gas added to the source discharge results in a reduction in the H⁻ beam noise. The beneficial effect of N₂ gas on H⁻ beam noise was first discovered by Bill Ingalls and Stu Orbesen on the ATS SAS source. For the 4X source the observed effect is that when N2 gas is added to the discharge the H⁻more » beam noise is reduced about a factor of 2.« less

Ultrafast Hot Carrier Dynamics in GaN and Its Impact on the Efficiency Droop.

PubMed

Jhalani, Vatsal A; Zhou, Jin-Jian; Bernardi, Marco

2017-08-09

GaN is a key material for lighting technology. Yet, the carrier transport and ultrafast dynamics that are central in GaN light-emitting devices are not completely understood. We present first-principles calculations of carrier dynamics in GaN, focusing on electron-phonon (e-ph) scattering and the cooling and nanoscale dynamics of hot carriers. We find that e-ph scattering is significantly faster for holes compared to electrons and that for hot carriers with an initial 0.5-1 eV excess energy, holes take a significantly shorter time (∼0.1 ps) to relax to the band edge compared to electrons, which take ∼1 ps. The asymmetry in the hot carrier dynamics is shown to originate from the valence band degeneracy, the heavier effective mass of holes compared to electrons, and the details of the coupling to different phonon modes in the valence and conduction bands. We show that the slow cooling of hot electrons and their long ballistic mean free paths (over 3 nm at room temperature) are a possible cause of efficiency droop in GaN light-emitting diodes. Taken together, our work sheds light on the ultrafast dynamics of hot carriers in GaN and the nanoscale origin of efficiency droop.

Fast gas heating and radial distribution of active species in nanosecond capillary discharge in pure nitrogen and N2:O2 mixtures

NASA Astrophysics Data System (ADS)

Lepikhin, N. D.; Popov, N. A.; Starikovskaia, S. M.

2018-05-01

Fast gas heating is studied experimentally and numerically using pulsed nanosecond capillary discharge in pure nitrogen and N2:O2 mixtures under the conditions of high specific deposited energy (up to 1 eV/molecule) and high reduced electric fields (100–300 Td). Deposited energy, electric field and gas temperature are measured as functions of time. The radial distribution of active species is analyzed experimentally. The roles of processes involving {{{N}}}2({{B}}) ={{{N}}}2({{{B}}}3{{{\\Pi }}}{{g}},{{{W}}}3{{{Δ }}}{{u}},{{B}}{{\\prime} }3{{{Σ }}}{{u}}-), {{{N}}}2({{{A}}}3{{{Σ }}}{{u}}+) and N(2D) excited nitrogen species leading to heat release are analyzed using numerical modeling in the framework of 1D axial approximation.

Gas entrapment and microbial N2O reduction reduce N2O emissions from a biochar-amended sandy clay loam soil

PubMed Central

Harter, Johannes; Guzman-Bustamante, Ivan; Kuehfuss, Stefanie; Ruser, Reiner; Well, Reinhard; Spott, Oliver; Kappler, Andreas; Behrens, Sebastian

2016-01-01

Nitrous oxide (N2O) is a potent greenhouse gas that is produced during microbial nitrogen transformation processes such as nitrification and denitrification. Soils represent the largest sources of N2O emissions with nitrogen fertilizer application being the main driver of rising atmospheric N2O concentrations. Soil biochar amendment has been proposed as a promising tool to mitigate N2O emissions from soils. However, the underlying processes that cause N2O emission suppression in biochar-amended soils are still poorly understood. We set up microcosm experiments with fertilized, wet soil in which we used 15N tracing techniques and quantitative polymerase chain reaction (qPCR) to investigate the impact of biochar on mineral and gaseous nitrogen dynamics and denitrification-specific functional marker gene abundance and expression. In accordance with previous studies our results showed that biochar addition can lead to a significant decrease in N2O emissions. Furthermore, we determined significantly higher quantities of soil-entrapped N2O and N2 in biochar microcosms and a biochar-induced increase in typical and atypical nosZ transcript copy numbers. Our findings suggest that biochar-induced N2O emission mitigation is based on the entrapment of N2O in water-saturated pores of the soil matrix and concurrent stimulation of microbial N2O reduction resulting in an overall decrease of the N2O/(N2O + N2) ratio. PMID:28008997

Influence of Carrier Gas Composition on the Stress of Al₂O₃ Coatings Prepared by the Aerosol Deposition Method.

PubMed

Schubert, Michael; Exner, Jörg; Moos, Ralf

2014-08-05

Al₂O₃ films were prepared by the aerosol deposition method at room temperature using different carrier gas compositions. The layers were deposited on alumina substrates and the film stress of the layer was calculated by measuring the deformation of the substrate. It was shown that the film stress can be halved by using oxygen instead of nitrogen or helium as the carrier gas. The substrates were annealed at different temperature steps to gain information about the temperature dependence of the reduction of the implemented stress. Total relaxation of the stress can already be achieved at 300 °C. The XRD pattern shows crystallite growth and reduction of microstrain while annealing.

Lactose carrier protein of Escherichia coli. Transport and binding of 2'-(N-dansyl)aminoethyl beta-D-thiogalactopyranoside and p-nitrophenyl alpha-d-galactopyranoside.

PubMed

Overath, P; Teather, R M; Simoni, R D; Aichele, G; Wilhelm, U

1979-01-09

The elevated level of lactose carrier protein present in cytoplasmic membranes derived from Escherichia coli strain T31RT, which carries the Y gene of the lac operon on a plasmid vector (Teather, R. M., et al. (1978) Mol. Gen. Genet. 159, 239--248), has allowed the detection of a complex between the carrier and the fluorescent substrate 2'-(N-dansyl)-aminoethyl beta-D-thiogalactopyranoside (Dns2-S-Gal). Binding is accompanied by a 50-nm blue shift in the emission maximum of the dansyl residue. The complex (dissociation constant, KD = 30 micron) rapidly dissociates upon addition of competing substrates such as beta-D-galactopyranosyl 1-thio-beta-D-galactopyranoside or upon reaction with the thiol reagent p-chloromercuribenzenesulfonate. Binding of both Dns2-S-Gal and p-nitrophenyl alpha-D-galactopyranoside (alpha-NPG) occurs spontaneously in the absence of an electrochemical potential gradient across the membrane. Comparison of equilibrium binding experiments using Dns2-S-Gal or alpha-NPG and differential labeling of the carrier with radioactive amino acids shows that the carrier binds 1 mol of substrate per mol of polypeptide (molecular weight 30 000). In addition to specific binding to the lactose carrier, Dns2-S-gal binds unspecifically to lipid vesicles or membranes, as described by a partition coefficient, K = 60, resulting in a 25-nm blue shift in the emission maximum of the dansyl group. Both Dns2-S-Gal and alpha-NPG are not only bound by the lactose carrier but also transported across the membrane by this transport protein in cells and membrane vesicles. The fluorescence changes observed with dansylated galactosides in membrane vesicles in the presence of an electrochemical gradient (Schuldiner et al. (1975) J. Biol. Chem. 250, 1361--1370)) are interpreted as an increase in unspecific binding after translocation.

Raman Studies on Pre- and Post-Processed CVD Graphene Films Grown under Various Nitrogen Carrier Gas Flows

NASA Astrophysics Data System (ADS)

Beh, K. P.; Yam, F. K.; Abdalrheem, Raed; Ng, Y. Z.; Suhaimi, F. H. A.; Lim, H. S.; Mat Jafri, M. Z.

2018-04-01

In this work, graphene films were grown on copper substrates using chemical vapour deposition method under various N2 carrier flow rate. The samples were characterized using Raman spectroscopy. Three sets of Raman measurements have been performed: graphene/Cu (as-grown samples), pre-annealed graphene/glass, and post-annealed graphene/glass. It was found that the Raman spectra of graphene/Cu samples possessed a hump-shaped baseline, additionally higher signal-to-noise ratio (SNR) that leads to attenuation graphene-related bands. Significant improvement of SNR and flat baseline were observed for graphene films transferred on glass substrate. Further analysis on the remaining sets of Raman spectra highlighted minute traces of polymethyl methacrylate (PMMA) could yield misleading results. Hence, the set of Raman spectra on annealed graphene/glass samples would be suitable in further elucidating the effects of N2 carrier flow towards graphene growth. From there, higher N2 flow implied dilution of methanol/H2 mixture, limiting interactions between reactants and substrate. This leads to smaller crystallite size and lesser graphene layers.

Syngas generation from n-butane with an integrated MEMS assembly for gas processing in micro-solid oxide fuel cell systems.

PubMed

Bieberle-Hütter, A; Santis-Alvarez, A J; Jiang, B; Heeb, P; Maeder, T; Nabavi, M; Poulikakos, D; Niedermann, P; Dommann, A; Muralt, P; Bernard, A; Gauckler, L J

2012-11-21

An integrated system of a microreformer and a carrier allowing for syngas generation from liquefied petroleum gas (LPG) for micro-SOFC application is discussed. The microreformer with an overall size of 12.7 mm × 12.7 mm × 1.9 mm is fabricated with micro-electro-mechanical system (MEMS) technologies. As a catalyst, a special foam-like material made from ceria-zirconia nanoparticles doped with rhodium is used to fill the reformer cavity of 58.5 mm(3). The microreformer is fixed onto a microfabricated structure with built-in fluidic channels and integrated heaters, the so-called functional carrier. It allows for thermal decoupling of the cold inlet gas and the hot fuel processing zone. Two methods for heating the microreformer are compared in this study: a) heating in an external furnace and b) heating with the two built-in heaters on the functional carrier. With both methods, high butane conversion rates of 74%-85% are obtained at around 550 °C. In addition, high hydrogen and carbon monoxide yields and selectivities are achieved. The results confirm those from classical lab reformers built without MEMS technology (N. Hotz et al., Chem. Eng. Sci., 2008, 63, 5193; N. Hotz et al., Appl. Catal., B, 2007, 73, 336). The material combinations and processing techniques enable syngas production with the present MEMS based microreformer with high performance for temperatures up to 700 °C. The functional carrier is the basis for a new platform, which can integrate the micro-SOFC membranes and the gas processing unit as subsystem of an entire micro-SOFC system.

Nitrogen gas flushing can be bactericidal: the temperature-dependent destiny of Bacillus weihenstephanensis KBAB4 under a pure N2 atmosphere.

PubMed

Munsch-Alatossava, Patricia; Alatossava, Tapani

2014-01-01

Gram-negative Pseudomonas and Gram-positive Bacillus are the most common spoilage bacteria in raw and pasteurized milk, respectively. In previous studies, nitrogen (N2) gas flushing treatments of raw and pasteurized milk at cold chain-temperatures inhibited bacterial spoilage and highlighted different susceptibilities to the N2 treatment with the exclusion of certain bacterial types. Here, we investigated the effects of pure N2 gas flushing on representative strains of these genera grown in mono- or co-cultures at 15 and 25°C. Bacillus weihenstephanensis, a frequent inhabitant of fluid dairy products, is represented by the genome-sequenced KBAB4 strain. Among Pseudomonas, P. tolaasii LMG 2342(T) and strain C1, a raw milk psychrotroph, were selected. The N2 gas flushing treatment revealed: (1) temperature-dependent responses; (2) inhibition of the growth of both pseudomonads; (3) emergence of small colony variants (SCVs) for B. weihenstephanensis strain KBAB4 at 15°C induced by the N2 treatment or when grown in co-culture with Pseudomonas strains; (4) N2 gas flushing modulates (suppressed or stimulated) bacterial antagonistic reactions in co-cultures; (5) most importantly, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses revealed that at 25°C the majority of the KBAB4 cells were killed by pure N2 gas flushing. This observation constitutes the first evidence that N2 gas flushing has bactericidal effects.

Detection of haemoglobins with abnormal oxygen affinity by single blood gas analysis and 2,3-diphosphoglycerate measurement.

PubMed

Guerrini, G; Morabito, A; Samaja, M

2000-10-01

The aim is to determine if a single measurement of blood 2,3-diphosphoglycerate combined with gas analysis (pH, PCO2, PO2 and saturation) can identify the cause of an altered blood-oxygen affinity: the presence of an abnormal haemoglobin or a red cell disorder. The population (n=94) was divided into healthy controls (A, n=14), carriers of red cell disorders (B, n=72) and carriers of high oxygen affinity haemoglobins (C, n=8). Those variables were measured both in samples equilibrated at selected PCO2 and PO2 and in venous blood. In the univariable approach applied to equilibrated samples, we correctly identified C subjects in 93.6% or 96.8% of the cases depending on the selected variable, the standard P50 (PO2 at which 50% of haemoglobin is oxygenated) or a composite variable calculated from the above measurements. After introducing the haemoglobin concentration as a further discriminating variable, the A and B subjects were correctly identified in 91.9% or 94.2% of the cases, respectively. These figures become 93.0% or 86.1%, and 93.7% or 94.9% of the cases when using direct readings from venous blood, thereby avoiding the blood equilibration step. This test is feasible also in blood samples stored at 4 degrees C for 48 h, or at room temperature for 8 h.

Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

DOE PAGES

Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; ...

2015-02-18

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10 –2 cmmore » 2/s. We also report on the device's optical response characteristics at 78 K.« less

Irreversibility and carriers control in two-dimensional electron gas at LaTiO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Bergeal, N.; Biscaras, J.; Hurand, S.; Feuillet-Palma, C.; Lesueur, J.; Rastogi, A.; Budhani, R. C.; Reyren, N.; Lesne, E.; Leboeuf, D.; Proust, C.

2013-03-01

It has been shown recently that a two-dimensional electron gas 2DEG could form at the interface of two insulators such as LaAlO3 and SrTiO3, or LaTiO3 (a Mott insulator) and SrTiO3. We present low temperature transport measurements on LaTiO3/SrTiO3 and LaAlO3/SrTiO3 hetero-structures, whose properties can be modulated by field effect using a metallic gate on the back of the substrate. Here we show that when the carrier density is electrostatically increased beyond a critical value, the added electrons escape into the SrTiO3 leading to an irreversible doping regime where all the electronic properties of the 2DEG saturate (carrier density, resistivity, superconducting transition...). The dynamic of leakage was studied using time resolved measurement. Based on a complete self-consistent description of the confinement well, a thermal model for the carriers escape has been developed, which quantitatively accounts for the data.

Free-carrier mobility in GaN in the presence of dislocation walls

NASA Astrophysics Data System (ADS)

Farvacque, J.-L.; Bougrioua, Z.; Moerman, I.

2001-03-01

The free-carrier mobility versus carrier density in n-type GaN grown by low-pressure metal-organic vapor- phase epitaxy on a sapphire substrate experiences a particular behavior that consists of the appearance of a sharp transition separating a low- from a high-mobility regime. This separation appears as soon as the carrier density exceeds a critical value that depends on the growth process. Using low-field electrical transport simulations, we show that this particular mobility behavior cannot be simply interpreted in terms of dislocation scattering or trapping mechanisms, but that it is also controlled by the collective effect of dislocation walls (the columnar structure). As the free-carrier density increases, the more efficient screening properties result in the transition from a barrier-controlled mobility regime to a pure-diffusion-process-controlled mobility regime. The model permits us to reproduce the experimental mobility collapse quantitatively.

Thermodynamic evaluation of hydrogen production for fuel cells by using bio-ethanol steam reforming: Effect of carrier gas addition

NASA Astrophysics Data System (ADS)

Hernández, Liliana; Kafarov, Viatcheslav

Omitting the influence of the addition of carrier gas to the reaction system for hydrogen production by bio-ethanol steam reforming can lead to wrong conclusions, especially when it is going to be made to scale. The effect of carrier gas addition to produce hydrogen using bio-ethanol steam reforming to feed fuel cells was evaluated. Thermodynamic calculations in equilibrium conditions were made, however the analysis derived from them can also be applied to kinetic conditions. These calculations were made by using the Aspen-HYSYS software at atmospheric pressure and different values of temperature, water/ethanol molar ratios, and inert (argon)/(water/ethanol) molar ratios. The addition of inert carrier gas modifies the concentrations of the reaction products in comparison to those obtained without its presence. This behavior occurs because most of the reactions which take place in bio-ethanol steam reforming have a positive difference of moles. This fact enhances the system sensitivity to inert concentration at low and moderated temperatures (<700 °C). At high values of temperature, the inert addition does not influence the composition of the reaction products because of the predominant effect of inverse WGS reaction.

effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru; Lundin, V. W.; Zavarin, E. E.

The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages whilemore » retaining high transconductance.« less

Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using Infrared Reflectance Spectroscopy

NASA Astrophysics Data System (ADS)

Narita, Katsutoshi; Hijikata, Yasuto; Yaguchi, Hiroyuki; Yoshida, Sadafumi; Nakashima, Shinichi

2004-08-01

We have estimated the free-carrier concentration and drift mobility in n-type 6H-SiC wafers in the carrier concentration range of 1017-1019 cm-3 from far- and mid-infrared (30-2000 cm-1) reflectance spectra obtained at room temperature. A modified classical dielectric function model was employed for the analysis. We found good agreement between the electrical properties derived from infrared reflectance spectroscopy and those derived from Hall effect measurements. We have demonstrated the spatial mapping of carrier concentration and mobility for commercially produced 2 inch SiC wafers.

High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

PubMed

Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

2017-09-13

A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

Enhanced piezoelectric output of NiO/nanoporous GaN by suppression of internal carrier screening

NASA Astrophysics Data System (ADS)

Waseem, Aadil; Jeong, Dae Kyung; Johar, Muhammad Ali; Kang, Jin-Ho; Ha, Jun-Seok; Key Lee, June; Ryu, Sang-Wan

2018-06-01

The efficiency of piezoelectric nanogenerators (PNGs) significantly depends on the free carrier concentration of semiconductors. In the presence of a mechanical stress, piezoelectric charges are generated at both ends of the PNG, which are rapidly screened by the free carriers. The screening effect rapidly decreases the piezoelectric output within fractions of a second. In this study, the piezoelectric outputs of bulk- and nanoporous GaN-based heterojunction PNGs are compared. GaN thin films were epitaxially grown on sapphire substrates using metal organic chemical vapor deposition. Nanoporous GaN was fabricated using electrochemical etching, depleted of free carriers owing to the surface Fermi-level pinning. A highly resistive NiO thin film was deposited on bulk- and nanoporous GaN using radio frequency magnetron sputter. The NiO/nanoporous GaN PNG (NPNG) under a periodic compressive stress of 4 MPa exhibited an output voltage and current of 0.32 V and 1.48 μA cm‑2, respectively. The output voltage and current of the NiO/thin film-GaN PNG (TPNG) were three and five times smaller than those of the NPNG, respectively. Therefore, the high-resistivity of NiO and nanoporous GaN depleted by the Fermi-level pinning are advantageous and provide a better piezoelectric performance of the NPNG, compared with that of the TPNG.

Interannual Variability in Soil Trace Gas (CO2, N2O, NO) Fluxes and Analysis of Controllers

NASA Technical Reports Server (NTRS)

Potter, C.; Klooster, S.; Peterson, David L. (Technical Monitor)

1997-01-01

Interannual variability in flux rates of biogenic trace gases must be quantified in order to understand the differences between short-term trends and actual long-term change in biosphere-atmosphere interactions. We simulated interannual patterns (1983-1988) of global trace gas fluxes from soils using the NASA Ames model version of CASA (Carnegie-Ames-Stanford Approach) in a transient simulation mode. This ecosystem model has been recalibrated for simulations driven by satellite vegetation index data from the NOAA Advanced Very High Resolution Radiometer (AVHRR) over the mid-1980s. The predicted interannual pattern of soil heterotropic CO2 emissions indicates that relatively large increases in global carbon flux from soils occurred about three years following the strong El Nino Southern Oscillation (ENSO) event of 1983. Results for the years 1986 and 1987 showed an annual increment of +1 Pg (1015 g) C-CO2 emitted from soils, which tended to dampen the estimated global increase in net ecosystem production with about a two year lag period relative to plant carbon fixation. Zonal discrimination of model results implies that 80-90 percent of the yearly positive increments in soil CO2 emission during 1986-87 were attributable to soil organic matter decomposition in the low-latitudes (between 30 N and 30 S). Soils of the northern middle-latitude zone (between 30 N and 60 N) accounted for the residual of these annual increments. Total annual emissions of nitrogen trace gases (N2O and NO) from soils were estimated to vary from 2-4 percent over the time period modeled, a level of variability which is consistent with predicted interannual fluctuations in global soil CO2 fluxes. Interannual variability of precipitation in tropical and subtropical zones (30 N to 20 S appeared to drive the dynamic inverse relationship between higher annual emissions of NO versus emissions of N2O. Global mean emission rates from natural (heterotrophic) soil sources over the period modeled (1983

Spectroscopic evidence of photogenerated carrier separation by built-in electric field in Sb-doped n-BaSi2/B-doped p-BaSi2 homojunction diodes

NASA Astrophysics Data System (ADS)

Kodama, Komomo; Takabe, Ryota; Deng, Tianguo; Toko, Kaoru; Suemasu, Takashi

2018-05-01

The operation of a BaSi2 homojunction solar cell is first demonstrated. In n+-BaSi2 (20 nm)/p-BaSi2 (500 nm)/p+-BaSi2 (50 nm) homojunction diodes on p+-Si(111) (resistivity ρ < 0.01 Ω cm), the internal quantum efficiency (IQE) under AM1.5 illumination becomes pronounced at wavelengths λ < 800 nm and exceeded 30% at λ = 500 nm. In contrast, the IQE values are small at λ < 600 nm in n+-BaSi2 (300 nm)/p-Si (ρ > 0.1 Ω cm) heterojunction diodes, but are high in the range between 600 and 1200 nm. The difference in spectral response demonstrates the photogenerated carrier separation by the built-in electric field in the homojunction diode.

Numerical modeling of carrier gas flow in atomic layer deposition vacuum reactor: A comparative study of lattice Boltzmann models

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Dongqing; Chien Jen, Tien; Li, Tao

2014-01-15

This paper characterizes the carrier gas flow in the atomic layer deposition (ALD) vacuum reactor by introducing Lattice Boltzmann Method (LBM) to the ALD simulation through a comparative study of two LBM models. Numerical models of gas flow are constructed and implemented in two-dimensional geometry based on lattice Bhatnagar–Gross–Krook (LBGK)-D2Q9 model and two-relaxation-time (TRT) model. Both incompressible and compressible scenarios are simulated and the two models are compared in the aspects of flow features, stability, and efficiency. Our simulation outcome reveals that, for our specific ALD vacuum reactor, TRT model generates better steady laminar flow features all over the domainmore » with better stability and reliability than LBGK-D2Q9 model especially when considering the compressible effects of the gas flow. The LBM-TRT is verified indirectly by comparing the numerical result with conventional continuum-based computational fluid dynamics solvers, and it shows very good agreement with these conventional methods. The velocity field of carrier gas flow through ALD vacuum reactor was characterized by LBM-TRT model finally. The flow in ALD is in a laminar steady state with velocity concentrated at the corners and around the wafer. The effects of flow fields on precursor distributions, surface absorptions, and surface reactions are discussed in detail. Steady and evenly distributed velocity field contribute to higher precursor concentration near the wafer and relatively lower particle velocities help to achieve better surface adsorption and deposition. The ALD reactor geometry needs to be considered carefully if a steady and laminar flow field around the wafer and better surface deposition are desired.« less

Electrical Characteristics of Organic Field Effect Transistor Formed by Gas Treatment of High-k Al2O3 at Low Temperature

NASA Astrophysics Data System (ADS)

Lee, Sunwoo; Yoon, Seungki; Park, In-Sung; Ahn, Jinho

2009-04-01

We studied the electrical characteristics of an organic field effect transistor (OFET) formed by the hydrogen (H2) and nitrogen (N2) mixed gas treatment of a gate dielectric layer. We also investigated how device mobility is related to the length and width variations of the channel. Aluminum oxide (Al2O3) was used as the gate dielectric layer. After the treatment, the mobility and subthreshold swing were observed to be significantly improved by the decreased hole carrier localization at the interfacial layer between the gate oxide and pentacene channel layers. H2 gas plays an important role in removing the defects of the gate oxide layer at temperatures below 100 °C.

N-acetylgalactosamine-functionalized dendrimers as hepatic cancer cell-targeted carriers.

PubMed

Medina, Scott H; Tekumalla, Venkatesh; Chevliakov, Maxim V; Shewach, Donna S; Ensminger, William D; El-Sayed, Mohamed E H

2011-06-01

There is an urgent need for novel polymeric carriers that can selectively deliver a large dose of chemotherapeutic agents into hepatic cancer cells to achieve high therapeutic activity with minimal systemic side effects. PAMAM dendrimers are characterized by a unique branching architecture and a large number of chemical surface groups suitable for coupling of chemotherapeutic agents. In this article, we report the coupling of N-acetylgalactosamine (NAcGal) to generation 5 (G5) of poly(amidoamine) (PAMAM-NH₂) dendrimers via peptide and thiourea linkages to prepare NAcGal-targeted carriers used for targeted delivery of chemotherapeutic agents into hepatic cancer cells. We describe the uptake of NAcGal-targeted and non-targeted G5 dendrimers into hepatic cancer cells (HepG2) as a function of G5 concentration and incubation time. We examine the contribution of the asialoglycoprotein receptor (ASGPR) to the internalization of NAcGal-targeted dendrimers into hepatic cancer cells through a competitive inhibition assay. Our results show that uptake of NAcGal-targeted G5 dendrimers into hepatic cancer cells occurs via ASGPR-mediated endocytosis. Internalization of these targeted carriers increased with the increase in G5 concentration and incubation time following Michaelis-Menten kinetics characteristic of receptor-mediated endocytosis. These results collectively indicate that G5-NAcGal conjugates function as targeted carriers for selective delivery of chemotherapeutic agents into hepatic cancer cells. Copyright © 2011 Elsevier Ltd. All rights reserved.

Electron energy deposition in N2 gas

NASA Technical Reports Server (NTRS)

Fox, J. L.; Victor, G. A.

1988-01-01

The processes by which energetic electrons lose energy in a weakly ionized gas of molecular nitrogen are analyzed and calculations are carried out taking into account the discrete nature of the excitation processes. The excitation, ionization, dissociation and heating efficiencies are computed for energies up to 200 eV absorbed in a gas with fractional ionizations varying from 10(-6) to 10(-2). Individual vibrational excitations up to the seventh vibrational level are presented.

Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC

NASA Astrophysics Data System (ADS)

Mitani, Takeshi; Nakashima, Shin-ichi; Kojima, Kazutoshi; Kato, Tomohisa; Okumura, Hajime

2012-08-01

For n-type 4H-SiC crystals with carrier concentrations between 2 × 1017 and 2.5 × 1020 cm-3, Fano interference of the folded transverse acoustic (FTA) doublet modes was observed. The Fano line-shape parameters were shown to vary with carrier concentration. It is proposed that the peak shifts in the FTA modes resulting from interference with an electronic continuum state can be used to measure carrier concentration for n-type 4H-SiC up to 1020 cm-3. In addition, the relative intensity of the FTA doublet modes varies markedly with carrier concentrations above 5 × 1018 cm-3. This suggests that mode coupling occurs between the FTA doublet components. The variation in the intensity ratio is attributed to the intensity transfer between the FTA doublet components. This mode coupling arises from a phonon-phonon interaction via electronic continuum state-phonon interactions.

No-carrier-added (/sup 18/F)-N-methylspiroperidol

DOEpatents

Shiue, C.Y.; Fowler, J.S.; Wolf, A.P.

1985-10-04

The present invention is directed to the synthesis of a radioligand, labeled with a positron emitting radionuclide which is suitable for dynamic studies in humans using positron emission transaxial tomography. No-carrier-added (NCA) (/sup 18/F)-N-methylspiroperiodl is prepared from four different sustrates: p-nitrobenzonitrile, cyclopropyl p-nitrophenyl ketone, p-cyclopropanoyl-N,N,N-trimethylanilinium iodide and p-cyclopropanoyl-N,N,N-trimethylanilinium perchlorate. The process for the production of NCA (/sup 18/F)-N-methylspiroperidol is a nucleophilic aromatic substitution reaction. Furthermore, the compound of this invention is shown to be effective as a new drug of choice for in vivo examination of dopamine binding sites in a human brain. In particular, this drug is primarily useful in the noninvasive technique of positron emission transaxial tomography (PETT).

Properties of GaN grown on sapphire substrates

NASA Technical Reports Server (NTRS)

Crouch, R. K.; Debnam, W. J.; Fripp, A. L.

1978-01-01

Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.

Effects of temperature, pressure, and carrier gas on the cracking of coal tar over a char-dolomite mixtures and calcined dolomite in a fixed-bed reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seshadri, K.; Shamsi, A.

1998-10-01

A distillation fraction of a coal-derived liquid (tar) was cracked over a char-dolomite mixture, calcined dolomite, and silicon carbide in a fixed-bed reactor. The char-dolomite mixture (FWC) was produced from Pittsburgh No. 8 coal and dolomite in a Foster Wheeler carbonizer. The experiments were conducted under nitrogen and simulated coal gas (SCG), which was a mixture of CO, CO{sub 2}, H{sub 2}S, CH{sub 4}, N{sub 2}, and steam, at 1 and 17 atm. The conversion over these materials under nitrogen was much higher at 17 atm than at 1 atm. At higher pressures, tar molecules were trapped in the poresmore » of the bed material and underwent secondary reactions, resulting in the formation of excess char. However, when nitrogen was replaced by SCG, the reactions that induce char formation were suppressed, thus increasing the yield of gaseous products. The analysis of the gaseous products and the spent bed materials for organic and inorganic carbons suggested that the product distribution can be altered by changing the carrier gas, temperature, and pressure.« less

Correlation of doping, structure, and carrier dynamics in a single GaN nanorod

NASA Astrophysics Data System (ADS)

Zhou, Xiang; Lu, Ming-Yen; Lu, Yu-Jung; Gwo, Shangjr; Gradečak, Silvija

2013-06-01

We report the nanoscale optical investigation of a single GaN p-n junction nanorod by cathodoluminescence (CL) in a scanning transmission electron microscope. CL emission characteristic of dopant-related transitions was correlated to doping and structural defect in the nanorod, and used to determine p-n junction position and minority carrier diffusion lengths of 650 nm and 165 nm for electrons and holes, respectively. Temperature-dependent CL study reveals an activation energy of 19 meV for non-radiative recombination in Mg-doped GaN nanorods. These results directly correlate doping, structure, carrier dynamics, and optical properties of GaN nanostructure, and provide insights for device design and fabrication.

Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication

PubMed Central

Du, Chunhua; Huang, Xin; Jiang, Chunyan; Pu, Xiong; Zhao, Zhenfu; Jing, Liang; Hu, Weiguo; Wang, Zhong Lin

2016-01-01

In recent years, visible light communication (VLC) technology has attracted intensive attention due to its huge potential in superior processing ability and fast data transmission. The transmission rate relies on the modulation bandwidth, which is predominantly determined by the minority-carrier lifetime in III-group nitride semiconductors. In this paper, the carrier dynamic process under a stress field was studied for the first time, and the carrier recombination lifetime was calculated within the framework of quantum perturbation theory. Owing to the intrinsic strain due to the lattice mismatch between InGaN and GaN, the wave functions for the holes and electrons are misaligned in an InGaN/GaN device. By applying an external strain that “cancels” the internal strain, the overlap between the wave functions can be maximized so that the lifetime of the carrier is greatly reduced. As a result, the maximum speed of a single chip was increased from 54 MHz up to 117 MHz in a blue LED chip under 0.14% compressive strain. Finally, a bandwidth contour plot depending on the stress and operating wavelength was calculated to guide VLC chip design and stress optimization. PMID:27841368

Production of simplex RNS and ROS by nanosecond pulse N2/O2 plasma jets with homogeneous shielding gas for inducing myeloma cell apoptosis

NASA Astrophysics Data System (ADS)

Liu, Zhijie; Xu, Dehui; Liu, Dingxin; Cui, Qingjie; Cai, Haifeng; Li, Qiaosong; Chen, Hailan; Kong, Michael G.

2017-05-01

In this paper, atmospheric pressure N2/O2 plasma jets with homogeneous shielding gas excited by nanosecond pulse are obtained to generate simplex reactive nitrogen species (RNS) and reactive oxygen species (ROS), respectively, for the purpose of studying the simplex RNS and ROS to induce the myeloma cell apoptosis with the same discharge power. The results reveal that the cell death rate by the N2 plasma jet with N2 shielding gas is about two times that of the O2 plasma jet with O2 shielding gas for the equivalent treatment time. By diagnosing the reactive species of ONOO-, H2O2, OH and \\text{O}2- in medium, our findings suggest the cell death rate after plasma jets treatment has a positive correlation with the concentration of ONOO-. Therefore, the ONOO- in medium is thought to play an important role in the process of inducing myeloma cell apoptosis.

Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kurtz, Steven R.; Klem, J. F.; Allerman, A. A.; Sieg, R. M.; Seager, C. H.; Jones, E. D.

2002-02-01

To gain insight into the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (1.1 eV band gap) grown by molecular beam epitaxy (MBE). Annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (≫mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies with our earlier results for devices grown by metalorganic chemical vapor deposition (MOCVD), we find significant electron diffusion in the MBE material (reversed from the hole diffusion in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a "universal," nitrogen-related defect.

N 2 gas is an effective fertilizer for bioethanol production by Zymomonas mobilis

DOE PAGES

Kremer, Timothy A.; LaSarre, Breah; Posto, Amanda L.; ...

2015-02-02

A nascent cellulosic ethanol industry is struggling to become cost-competitive against corn ethanol and gasoline. Millions of dollars are spent on nitrogen supplements to make up for the low nitrogen content of the cellulosic feedstock. In this paper, we show for the first time to our knowledge that the ethanol-producing bacterium, Zymomonas mobilis, can use N 2 gas in lieu of traditional nitrogen supplements. Despite being an electron-intensive process, N 2 fixation by Z. mobilis did not divert electrons away from ethanol production, as the ethanol yield was greater than 97% of the theoretical maximum. In a defined medium, Z.more » mobilis produced ethanol 50% faster per cell and generated half the unwanted biomass when supplied N 2 instead of ammonium. In a cellulosic feedstock-derived medium, Z. mobilis achieved a similar cell density and a slightly higher ethanol yield when supplied N 2 instead of the industrial nitrogen supplement, corn steep liquor. Finally, we estimate that N 2-utilizing Z. mobilis could save a cellulosic ethanol production facility more than $1 million/y.« less

N2 gas is an effective fertilizer for bioethanol production by Zymomonas mobilis

PubMed Central

Kremer, Timothy A.; LaSarre, Breah; Posto, Amanda L.; McKinlay, James B.

2015-01-01

A nascent cellulosic ethanol industry is struggling to become cost-competitive against corn ethanol and gasoline. Millions of dollars are spent on nitrogen supplements to make up for the low nitrogen content of the cellulosic feedstock. Here we show for the first time to our knowledge that the ethanol-producing bacterium, Zymomonas mobilis, can use N2 gas in lieu of traditional nitrogen supplements. Despite being an electron-intensive process, N2 fixation by Z. mobilis did not divert electrons away from ethanol production, as the ethanol yield was greater than 97% of the theoretical maximum. In a defined medium, Z. mobilis produced ethanol 50% faster per cell and generated half the unwanted biomass when supplied N2 instead of ammonium. In a cellulosic feedstock-derived medium, Z. mobilis achieved a similar cell density and a slightly higher ethanol yield when supplied N2 instead of the industrial nitrogen supplement, corn steep liquor. We estimate that N2-utilizing Z. mobilis could save a cellulosic ethanol production facility more than $1 million/y. PMID:25646422

Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zuo, Daniel, E-mail: dzuo@illinois.edu; Liu, Runyu; Wasserman, Daniel

2015-02-16

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 × 10{sup −2} cm{sup 2}/s. We also report onmore » the device's optical response characteristics at 78 K.« less

Enhanced visible light photocatalytic H2-production of g-C3N4/WS2 composite heterostructures

NASA Astrophysics Data System (ADS)

Akple, Maxwell Selase; Low, Jingxiang; Wageh, S.; Al-Ghamdi, Ahmed. A.; Yu, Jiaguo; Zhang, Jun

2015-12-01

As a clean and renewable solar H2-production system to address the increasing global environmental crisis and energy demand, photocatalytic hydrogen production from water splitting using earth abundant materials has received a lot of attention. In this study, WS2-graphitic carbon nitride (g-C3N4) composites were prepared using WO3 and thiourea as precursors through a gas-solid reaction. Different amount of WS2 were loaded on g-C3N4 to form the heterostructures and the composite samples exhibited enhanced photocatalytic activity for H2 production under visible light. The composite sample with 0.01 wt% WS2 exhibited the highest H2-production rate of 101 μmol g-1 h-1, which was even better than that of the Pt-C3N4 sample with the same loading content. The high photocatalytic activity was attributed to the formation of heterojunction between g-C3N4 and WS2 cocatalyst which allowed for effective separation of photogenerated charge carriers. This work showed the possibility for the utilization of low cost WS2 as an efficient cocatalyst to promote the photocatalytic H2 production of g-C3N4.

Thermal and Evolved Gas Analysis of Geologic Samples Containing Organic Materials: Implications for the 2007 Mars Phoenix Scout Mission

NASA Technical Reports Server (NTRS)

Lauer, H. V., Jr.; Ming, Douglas W.; Golden, D. C.; Boynton, W. V.

2006-01-01

The Thermal and Evolved Gas Analyzer (TEGA) instrument scheduled to fly onboard the 2007 Mars Phoenix Scout Mission will perform differential scanning calorimetry (DSC) and evolved gas analysis (EGA) of soil samples and ice collected from the surface and subsurface at a northern landing site on Mars. We have been developing a sample characterization data library using a laboratory DSC integrated with a quadrupole mass spectrometer to support the interpretations of TEGA data returned during the mission. The laboratory TEGA test-bed instrument has been modified to operate under conditions similar to TEGA, i.e., reduced pressure (e.g., 100 torr) and reduced carrier gas flow rates. We have previously developed a TEGA data library for a variety of volatile-bearing mineral phases, including Fe-oxyhydroxides, phyllosilicates, carbonates, and sulfates. Here we examine the thermal and evolved gas properties of samples that contain organics. One of the primary objectives of the Phoenix Scout Mission is to search for habitable zones by assessing organic or biologically interesting materials in icy soil. Nitrogen is currently the carrier gas that will be used for TEGA. In this study, we examine two possible modes of detecting organics in geologic samples; i.e., pyrolysis using N2 as the carrier gas and combustion using O2 as the carrier gas.

Dilution and permeation standards for the generation of NO, NO2 and SO2 calibration gas mixtures

NASA Astrophysics Data System (ADS)

Haerri, H.-P.; Macé, T.; Waldén, J.; Pascale, C.; Niederhauser, B.; Wirtz, K.; Stovcik, V.; Sutour, C.; Couette, J.; Waldén, T.

2017-03-01

The evaluation results of the metrological performance of a dilution and a permeation standard for generating SI-traceable calibration gas mixtures of NO, SO2 and NO2 for ambient air measurements are presented. The composition of the in situ produced reference gas mixtures is calculated from the instantaneous values of the input quantities of the generating standards. In a measurement comparison, the calibration and measurement capabilities of five laboratories were evaluated for the three analytes at limiting amount of substance fractions in ambient air between 20 and 150 nmol mol-1. For the upper generated reference values the target relative uncertainties of  ⩽2% (for NO and SO2) and  ⩽3% (for NO2) for evaluating the laboratory results were fulfilled in 12 out of 13 cases. For the analytical results seven out of nine laboratories met the criteria for the upper values for NO and NO2, for SO2 it was one out of four. From the negative degrees of equivalence of all NO2 comparison results it was supposed that the permeation rate of NO2 through the FEP polymer membrane of the permeator was different in air and N2. Subsequent precision permeation measurements with various carrier gases revealed that the permeation rate of NO2 was  ≈0.8% lower in synthetic air compared to N2. With the corrected NO2 reference values for air the degrees of equivalence of the laboratory results were improved and closer to be symmetrically distributed.

Near-field control and imaging of free charge carrier variations in GaN nanowires

NASA Astrophysics Data System (ADS)

Berweger, Samuel; Blanchard, Paul T.; Brubaker, Matt D.; Coakley, Kevin J.; Sanford, Norman A.; Wallis, Thomas M.; Bertness, Kris A.; Kabos, Pavel

2016-02-01

Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated electronic properties. Here, we develop a hybrid scanning probe-based methodology to investigate local variations in electronic structure across individual n-doped GaN NWs integrated into a transistor device. We perform scanning microwave microscopy (SMM), which we combine with scanning gate microscopy to determine the free-carrier SMM signal contribution and image local charge carrier density variations. In particular, we find significant variations in free carriers across NWs, with a higher carrier density at the wire facets. By increasing the local carrier density through tip-gating, we find that the tip injects current into the NW with strongly localized current when positioned over the wire vertices. These results suggest that the strong variations in electronic properties observed within NWs have significant implications for device design and may lead to new paths to optimization.

Preliminary evaluation of a load-bearing BMP-2 carrier for segmental defect regeneration.

PubMed

Chu, Tien-Min G; Sargent, Peter; Warden, Stuart J; Turner, Charles H; Stewart, Rena L

2006-01-01

Large segmental defects in bones can result from tumor removal, massive trauma, congenital malformation, or non-union fractures. Such defects often are difficult to manage and require multiple-phase surgery to achieve adequate union and function. In this study, we propose a novel design of bone morphogenetic protein 2 (BMP-2) carrier for tissue engineering of segmental defect regeneration. The tube-shaped BMP-2 carrier was fabrication from a poly(propylene fumarate)/tricalcium phosphate (PPF/TCP) composite via casting technique developed in our laboratory. An in vitro evaluation showed that the compressive strength of the carrier decreased about 48% in 12 weeks while maintained a pH in the 6.8-7.4 range. In vivo study was conducted by implanting carriers loaded with 10 microg of BMP-2 in 5 mm rat femur gap model for 15 weeks. X-ray evidence of bridging was first found in the BMP group at 3 weeks. Bridging in all animals (N = 4) in the BMP group was found at 9 weeks. No x-ray evidence of bridging was found in the No BMP group (N = 3). pQCT analysis indicated that the bone mineral density of the callus in the BMP group has reached the level of native femur at 15 weeks after implantation, while the callus in the No BMP group has a bone mineral density at a lower level of 84% to the native femur. Histology analysis shows that a normal fatty bone marrow was restored and mineralized callus formed and bridged the segmental defect.

Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

NASA Astrophysics Data System (ADS)

Meng, Xiao; Wang, Lai; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2016-01-01

Efficiency droop is currently one of the most popular research problems for GaN-based light-emitting diodes (LEDs). In this work, a differential carrier lifetime measurement system is optimized to accurately determine carrier lifetimes (τ) of blue and green LEDs under different injection current (I). By fitting the τ-I curves and the efficiency droop curves of the LEDs according to the ABC carrier rate equation model, the impact of Auger recombination and carrier leakage on efficiency droop can be characterized simultaneously. For the samples used in this work, it is found that the experimental τ-I curves cannot be described by Auger recombination alone. Instead, satisfactory fitting results are obtained by taking both carrier leakage and carriers delocalization into account, which implies carrier leakage plays a more significant role in efficiency droop at high injection level.

The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications

PubMed Central

Yang, Haojun; Ma, Ziguang; Jiang, Yang; Wu, Haiyan; Zuo, Peng; Zhao, Bin; Jia, Haiqiang; Chen, Hong

2017-01-01

We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used. PMID:28240254

Microstructure and properties of 17-4PH steel plasma nitrocarburized with a carrier gas containing rare earth elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, R.L., E-mail: ruiliangliu@126.com; Yan, M.F., E-mail: yanmufu@hit.edu.cn; Wu, Y.Q.

2010-01-15

The effect of rare earth addition in the carrier gas on plasma nitrocarburizing of 17-4PH steel was studied. The microstructure and crystallographically of the phases in the surface layer as well as surface morphology of the nitrocarburized specimens were characterized by optical microscope, X-ray diffraction and scanning tunneling microscope, respectively. The hardness of the surface layer was measured by using a Vickers hardness test. The results show that the incorporation of rare earth elements in the carrier gas can increase the nitrocarburized layer thickness up to 55%, change the phase proportion in the nitrocarburized layer, refine the nitrides in surfacemore » layer, and increase the layer hardness above 100HV. The higher surface hardening effect after rare earth addition is caused by improvement in microstructure and change in the phase proportion of the nitrocarburized layer.« less

Structural, optical and Carrier dynamics of self-assembled InGaN nanocolumns on Si(111)

NASA Astrophysics Data System (ADS)

Kumar, Praveen; Devi, Pooja; Soto Rodriguez, P. E. D.; Jain, Rishabh; Jaggi, Neena; Sinha, R. K.; Kumar, Mahesh

2018-05-01

We investigated the morphological, structural, optical, electrical and carrier relaxation dynamic changes on the self-assembled grown InGaN nanocolumns (NCs) directly on p-Si(111) substrate at two different substrate temperature, namely 580 °C (A) and 500 °C (B). The emission wavelength of comparably low temperature (LT) grown NCs was red-shifted from 3.2eV to 2.4eV. First observations on the charge carrier dynamics of these directly grown NCs show comparable broad excited state absorption (ESA) for LT gown NCs, which manifest bi-exponential decay due to the radiative defects generated during the coalescence of these NCs.

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells

NASA Astrophysics Data System (ADS)

Liu, W.; Butté, R.; Dussaigne, A.; Grandjean, N.; Deveaud, B.; Jacopin, G.

2016-11-01

We study the carrier-density-dependent recombination dynamics in m -plane InGaN/GaN multiple quantum wells in the presence of n -type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the radiative recombination channel into an excitonic and an electron-hole pair contribution, and extract the injected carrier-density-dependent bimolecular recombination coefficients. Contrary to the standard electron-hole picture, our results confirm the strong influence of excitons even at room temperature. Indeed, at 300 K, excitons represent up to 63 ± 6% of the photoexcited carriers. In addition, following the Shockley-Read-Hall model, we extract the electron and hole capture rates by deep levels and demonstrate that the increase in the effective lifetime with injected carrier density is due to asymmetric capture rates in presence of an n -type background doping. Thanks to the proper determination of the density-dependent recombination coefficients up to high injection densities, our method provides a way to evaluate the importance of Auger recombination.

N-type compensated silicon: resistivity, crystal growth, carrier lifetime, and relevant application for HIT solar cells

NASA Astrophysics Data System (ADS)

Li, Shuai; Gao, Wenxiu; Li, Zhen; Cheng, Haoran; Lin, Jinxia; Cheng, Qijin

2017-05-01

N-type compensated silicon shows unusual distribution of resistivity as crystal grows compared to the n-type uncompensated silicon. In this paper, evolutions of resistivities with varied concentrations of boron and varied starting resistivities of the n-type silicon are intensively calculated. Moreover, reduction of carrier mobility is taken into account by Schindler’s modified model of carrier mobility for the calculation of resistivity of the compensated silicon. As for substrates of solar cells, optimized starting resistivity and corresponding concentration of boron are suggested for better uniformity of resistivity and higher yield (fraction with ρ >0.5 ~ Ω \\centerdot \\text{cm} ) of the n-type compensated Cz crystal rod. A two-step growth method is investigated to obtain better uniformity of resistivity of crystal rod, and this method is very practical especially for the n-type compensated silicon. Regarding the carrier lifetime, the recombination by shallow energy-level dopants is taken into account for the compensated silicon, and evolution of carrier lifetime is simulated by considering all main recombination centers which agrees well with our measured carrier lifetimes as crystal grows. The n-type compensated silicon shows a larger reduction of carrier lifetime compared to the uncompensated silicon at the beginning of crystal growth, and recombination with a oxygen-related deep defect is sufficient to describe the reduction of degraded lifetime. Finally, standard heterojunction with intrinsic thin-layer (HIT) solar cells are made with substrates from the n-type compensated silicon rod, and a high efficiency of 22.1% is obtained with a high concentration (0.8× {{10}16}~\\text{c}{{\\text{m}}-3} ) of boron in the n-type compensated silicon feedstock. However, experimental efficiencies of HIT solar cells based on the n-type compensated silicon show an average reduction of 4% along with the crystal length compared to the uncompensated silicon. The

Section 6—Mechanical Bioeffects in the Presence of Gas-Carrier Ultrasound Contrast Agents

PubMed Central

2007-01-01

This review addresses the issue of mechanical ultrasound-induced bioeffects in the presence of gas carrier contrast agents (GCAs). Here, the term “contrast agent” refers to those agents that provide ultrasound contrast by being composed of microbubbles, encapsulated or not, containing one or more gases. Provided in this section are summaries on how contrast agents work, some of their current uses, and the potential for bio-effects associated with their presence in an ultrasonic field. PMID:10680618

Breast cancer sensitivity to neoadjuvant therapy in BRCA1 and CHEK2 mutation carriers and non-carriers.

PubMed

Pfeifer, Werner; Sokolenko, Anna P; Potapova, Olga N; Bessonov, Alexandr A; Ivantsov, Alexandr O; Laptiev, Sergey A; Zaitseva, Olga A; Yatsuk, Olga S; Matsko, Dmitry E; Semiglazova, Tatiana Yu; Togo, Alexandr V; Imyanitov, Evgeny N

2014-12-01

Breast carcinomas caused by inheritance of cancer-predisposing germ-line mutations have specific bioclinical features. This study aimed to analyze the efficacy of conventional cytotoxic treatment in BRCA1 and CHEK2 mutation carriers and non-carriers. The study included 415 Russian breast cancer patients aged 50 years or younger, who were subjected to various standard schemes of neoadjuvant therapy. The choice of therapy was done without the knowledge of the mutations status, because DNA testing was performed retrospectively using the archival tissue samples. 19 BRCA1 (4.6%) and 8 CHEK2 (1.9%) heterozygous genotypes were identified. BRCA1 mutation carriers achieved pathological complete response more frequently than non-carriers [6/19 (31.6%) vs. 46/388 (11.9%), p = 0.024]; this effect was limited to women treated by anthracycline-based therapy without taxanes [5/9 (55.6%) vs. 28/247 (11.3%), p = 0.002] and was not observed in any of 7 BRCA1 carriers receiving taxane-containing regimens. CHEK2 heterozygotes did not experience pathological complete response and showed lower frequency of objective clinical responses as compared to mutation non-carriers [4/8 (50%) vs. 333/388 (85.5%), p = 0.020]; the efficacy of neoadjuvant therapy was particularly poor in CHEK2 carriers receiving anthracyclines without taxanes. This study provides evidence for distinct sensitivity of BRCA1 and CHEK2 mutation-driven breast carcinomas to standard chemotherapeutic schemes.

Influence of hot carriers on catalytic reaction; Pt nanoparticles on GaN substrates under light irradiation.

PubMed

Kim, Sun Mi; Park, Dahee; Yuk, Youngji; Kim, Sang Hoon; Park, Jeong Young

2013-01-01

We report the hot carrier-driven catalytic activity of two-dimensional arrays of Pt nanoparticles on GaN substrate under light irradiation. In order to elucidate the effect of a hot carrier in a catalytic chemical reaction, the CO oxidation reaction was carried out on Pt nanoparticles on p- and n-type GaN under light irradiation. Metal catalysts composed of Pt nanoparticles were prepared using two different preparation methods: the one-pot polyol reduction and are plasma deposition methods. Under light irradiation, the catalytic activity of the Pt nanoparticles supported on GaN exhibited a distinct change depending on the doping type. The catalytic activity of the Pt nanoparticles on the n-doped GaN wafer decreased by 8-28% under light irradiation, compared to no irradiation (i.e., in the dark), while the Pt nanoparticles on the p-doped GaN wafer increased by 11-33% under light irradiation, compared to no irradiation. The catalytic activity increased on the smaller Pt nanoparticles, compared to the larger nanoparticles, presumably due to the mean free path of hot carriers. Based on these results, we conclude that the flow of hot carriers generated at the Pt-GaN interface during light irradiation is responsible for the change in catalytic activity on the Pt nanoparticles.

Effective mass in bilayer graphene at low carrier densities: The role of potential disorder and electron-electron interaction

NASA Astrophysics Data System (ADS)

Li, J.; Tan, L. Z.; Zou, K.; Stabile, A. A.; Seiwell, D. J.; Watanabe, K.; Taniguchi, T.; Louie, Steven G.; Zhu, J.

2016-10-01

In a two-dimensional electron gas, the electron-electron interaction generally becomes stronger at lower carrier densities and renormalizes the Fermi-liquid parameters, such as the effective mass of carriers. We combine experiment and theory to study the effective masses of electrons and holes me* and mh* in bilayer graphene in the low carrier density regime on the order of 1 ×1011c m-2 . Measurements use temperature-dependent low-field Shubnikov-de Haas oscillations observed in high-mobility hexagonal boron nitride supported samples. We find that while me* follows a tight-binding description in the whole density range, mh* starts to drop rapidly below the tight-binding description at a carrier density of n =6 ×1011c m-2 and exhibits a strong suppression of 30% when n reaches 2 ×1011c m-2 . Contributions from the electron-electron interaction alone, evaluated using several different approximations, cannot explain the experimental trend. Instead, the effect of the potential fluctuation and the resulting electron-hole puddles play a crucial role. Calculations including both the electron-electron interaction and disorder effects explain the experimental data qualitatively and quantitatively. This Rapid Communication reveals an unusual disorder effect unique to two-dimensional semimetallic systems.

Fluxes of CO2, CH4 and N2O at two European beech forests: linking soil gas production profiles with soil and stem fluxes

NASA Astrophysics Data System (ADS)

Maier, Martin; Machacova, Katerina; Halaburt, Ellen; Haddad, Sally; Urban, Otmar; Lang, Friederike

2016-04-01

Soil and plant surfaces are known to exchange greenhouse gases with the atmosphere. Some gases like nitrous oxide (N2O) and methane (CH4) can be produced and re-consumed in different soil depths and soil compartments, so that elevated concentrations of CH4 or N2O in the soil do not necessarily mean a net efflux from the soil into the atmosphere. Soil aeration, and thus the oxygen status can underlay a large spatial variability within the soil on the plot and profile scale, but also within soil aggregates. Thus, conditions suitable for production and consumption of CH4 and N2O can vary on different scales in the soil. Plant surfaces can also emit or take up CH4 and N2O, and these fluxes can significantly contribute to the net ecosystem exchange. Since roots usually have large intercellular spaces or aerenchyma they may represent preferential transport ways for soil gases, linking possibly elevated soil gas concentrations in the subsoil in a "shortcut" to the atmosphere. We tested the hypothesis that the spatial variability of the soil-atmosphere fluxes of CO2, CH4 and N2O is caused by the heterogeneity in soil properties. Therefore, we measured soil-atmosphere gas fluxes, soil gas concentrations and soil diffusivity profiles and did a small scale field assessment of soil profiles on the measurments plots. We further tried to link vertical profiles of soil gas concentrations and diffusivity to derive the production and consumption profiles, and to link these profiles to the stem-atmosphere flux rates of individual trees. Measurements were conducted in two mountain beech forests with different geographical and climatic conditions (White Carpathians, Czech Republic; Black Forest, Germany). Gas fluxes at stem and soil levels were measured simultaneously using static chamber systems and chromatographic and continuous laser analyses. Monitoring simultaneously vertical soil gas profiles allowed to assess the within-soil gas fluxes, and thus to localize the production and

Investigating and Optimizing Carrier Transport, Carrier Distribution, and Efficiency Droop in GaN-based Light-emitting Diodes

NASA Astrophysics Data System (ADS)

Zhu, Di

2011-12-01

The recent tremendous boost in the number and diversity of applications for light-emitting diodes (LEDs) indicates the emergence of the next-generation lighting and illumination technology. The rapidly improving LED technology is becoming increasingly viable especially for high-power applications. However, the greatest roadblock before finally breaching the main defensive position of conventional fluorescent and incandescent lamps still remains: GaN-based LEDs encounter a significant decrease in efficiency as the drive current increases, and this phenomenon is known as the efficiency droop. This dissertation focuses on uncovering the physical cause of efficiency droop in GaN-based LEDs and looks for solutions to it. GaN-based multiple-quantum-well (MQW) LEDs usually have abnormally high diode-ideality factors. Investigating the origin of the high diode-ideality factors could help to better understand the carrier transport in the LED MQW active region. We investigate the ideality factors of GaInN LEDs with different numbers of doped quantum barriers (QBs). Consistent with the theory, a decrease of the ideality factor as well as a reduction in forward voltage is found with increasing number of doped QBs. Experimental and simulation results indicate that the band profiles of QBs in the active region have a significant impact on the carrier transport mechanism, and the unipolar heterojunctions inside the active region play an important role in determining the diode-ideality factor. This dissertation will discuss several mechanisms leading to electron leakage which could be responsible for the efficiency droop. We show that the inefficient electron capture, the electron-attracting properties of polarized EBL, the inherent asymmetry in electron and hole transport and the inefficient EBL p-doping at high Al contents severely limit the ability to confine electrons to the MQWs. We demonstrate GaInN LEDs employing tailored Si doping in the QBs with strongly enhanced high

A microporous MOF with a polar pore surface exhibiting excellent selective adsorption of CO2 from CO2-N2 and CO2-CH4 gas mixtures with high CO2 loading.

PubMed

Pal, Arun; Chand, Santanu; Elahi, Syed Meheboob; Das, Madhab C

2017-11-14

A microporous MOF {[Zn(SDB)(L) 0.5 ]·S} n (IITKGP-5) with a polar pore surface has been constructed by the combination of a V-shaped -SO 2 functionalized organic linker (H 2 SDB = 4,4'-sulfonyldibenzoic acid) with an N-rich spacer (L = 2,5-bis(3-pyridyl)-3,4-diaza-2,4-hexadiene), forming a network with sql(2,6L1) topology. IITKGP-5 is characterized by TGA, PXRD and single crystal X-ray diffraction. The framework exhibits lozenge-shaped channels of an approximate size of 4.2 × 5.6 Å 2 along the crystallographic b axis with a potential solvent accessible volume of 26%. The activated IITKGP-5a revealed a CO 2 uptake capacity of 56.4 and 49 cm 3 g -1 at 273 K/1 atm and 295 K/1 atm, respectively. On the contrary, it takes up a much smaller amount of CH 4 (17 cm 3 g -1 at 273 K and 13.6 cm 3 g -1 at 295 K) and N 2 (5.5 cm 3 g -1 at 273 K; 4 cm 3 g -1 at 295 K) under 1 atm pressure exhibiting its potential for a highly selective adsorption of CO 2 from flue gas as well as a landfill gas mixture. Based on the ideal adsorbed solution theory (IAST), a CO 2 /N 2 selectivity of 435.5 and a CO 2 /CH 4 selectivity of 151.6 have been realized at 273 K/100 kPa. The values at 295 K are 147.8 for CO 2 /N 2 and 23.8 for CO 2 /CH 4 gas mixtures under 100 kPa. In addition, this MOF nearly approaches the target values proposed for PSA and TSA processes for practical utility exhibiting its prospect for flue gas separation with a CO 2 loading capacity of 2.04 mmol g -1 .

Opposing brain differences in 16p11.2 deletion and duplication carriers.

PubMed

Qureshi, Abid Y; Mueller, Sophia; Snyder, Abraham Z; Mukherjee, Pratik; Berman, Jeffrey I; Roberts, Timothy P L; Nagarajan, Srikantan S; Spiro, John E; Chung, Wendy K; Sherr, Elliott H; Buckner, Randy L

2014-08-20

Deletions and duplications of the recurrent ~600 kb chromosomal BP4-BP5 region of 16p11.2 are associated with a broad variety of neurodevelopmental outcomes including autism spectrum disorder. A clue to the pathogenesis of the copy number variant (CNV)'s effect on the brain is that the deletion is associated with a head size increase, whereas the duplication is associated with a decrease. Here we analyzed brain structure in a clinically ascertained group of human deletion (N = 25) and duplication (N = 17) carriers from the Simons Variation in Individuals Project compared with age-matched controls (N = 29 and 33, respectively). Multiple brain measures showed increased size in deletion carriers and reduced size in duplication carriers. The effects spanned global measures of intracranial volume, brain size, compartmental measures of gray matter and white matter, subcortical structures, and the cerebellum. Quantitatively, the largest effect was on the thalamus, but the collective results suggest a pervasive rather than a selective effect on the brain. Detailed analysis of cortical gray matter revealed that cortical surface area displays a strong dose-dependent effect of CNV (deletion > control > duplication), whereas average cortical thickness is less affected. These results suggest that the CNV may exert its opposing influences through mechanisms that influence early stages of embryonic brain development. Copyright © 2014 the authors 0270-6474/14/3411199-13$15.00/0.

Opposing Brain Differences in 16p11.2 Deletion and Duplication Carriers

PubMed Central

Qureshi, Abid Y.; Mueller, Sophia; Snyder, Abraham Z.; Mukherjee, Pratik; Berman, Jeffrey I.; Roberts, Timothy P.L.; Nagarajan, Srikantan S.; Spiro, John E.; Chung, Wendy K.; Sherr, Elliott H.

2014-01-01

Deletions and duplications of the recurrent ∼600 kb chromosomal BP4–BP5 region of 16p11.2 are associated with a broad variety of neurodevelopmental outcomes including autism spectrum disorder. A clue to the pathogenesis of the copy number variant (CNV)'s effect on the brain is that the deletion is associated with a head size increase, whereas the duplication is associated with a decrease. Here we analyzed brain structure in a clinically ascertained group of human deletion (N = 25) and duplication (N = 17) carriers from the Simons Variation in Individuals Project compared with age-matched controls (N = 29 and 33, respectively). Multiple brain measures showed increased size in deletion carriers and reduced size in duplication carriers. The effects spanned global measures of intracranial volume, brain size, compartmental measures of gray matter and white matter, subcortical structures, and the cerebellum. Quantitatively, the largest effect was on the thalamus, but the collective results suggest a pervasive rather than a selective effect on the brain. Detailed analysis of cortical gray matter revealed that cortical surface area displays a strong dose-dependent effect of CNV (deletion > control > duplication), whereas average cortical thickness is less affected. These results suggest that the CNV may exert its opposing influences through mechanisms that influence early stages of embryonic brain development. PMID:25143601

[Evaluation of inverse gas chromatography (IGC) methods to measure astragaloside solubility parameter from Buyang Huanwu decoction].

PubMed

Tang, Yu; Hu, Chao; Liao, Qiong; Liu, Wen-long; Yang, Yan-tao; He, Hong; He, Fu-yuan

2015-01-01

The solubility parameter determination of astrageloside from Buyang Huanwu decoction with inverse gas chromatography (IGC) method evaluation was investigated in this paper. Di-n-octyl phthalate Kwai alternative sample was used to carry out methodological study. The accuracy of the measured correlation coefficient was 0.992 1. Experimental precision measured by IGC experiments showed that the results were accurate and reliable. The sample was uniformly coated on the surface of an inert carrier and N2 gas was carrier gas, a variety of polar solvents such as isopropanol, toluene, acetone, chloroform, cyclohexane as probes. TCD detector temperature was 150 degrees C, gas room temperature was 120 degrees C. Similar headspace method was used whichever over 1 μL gas into the GC measurement, Retention time t(R), t(0) and all the parameters of air and probes molecules within the column were tested. Astragaloside solubility parameter was (21.02 ± 2.4) [J x cm(-3)] ½, literature value was 19.24 [J x cm(-3)] ½, and relevant coefficient was 0.984 5. IGC method is effective and accurate to measure ingredients solubility parameter.

Resistivity control of unintentionally doped GaN films

NASA Astrophysics Data System (ADS)

Grzegorczyk, A. P.; Macht, L.; Hageman, P. R.; Rudzinski, M.; Larsen, P. K.

2005-05-01

GaN epilayers were grown on sapphire substrates via low temperature GaN and AlN nucleation layers (NL) by metalorganic chemical vapor phase epitaxy (MOCVD). The morphology of the individual NLs strongly depends on the carrier gas used during the growth and recrystallization and this is the key factor for control of the resistivity of the GaN layer grown on it. The GaN nucleation layer grown in presence of N2 has a higher density of islands with a statistically smaller diameter than the samples grown in H2 atmosphere. The NL grown in N2 enables the growth GaN with a sheet resistivity higher than 3×104 cm as opposed to a 0.5 cm value obtained for the NL grown in H2. Introduction of an additional intermediate (IL) low temperature (GaN or AlN) nucleation layer changes the GaN epilayer resistivity to about 50 cm, regardless of the carrier gas used during the growth of the IL. Defect selective etching demonstrated that control of the type and density of the dislocations in GaN enables the growth of highly resistive layers without any intentional acceptor doping (Mg, Zn). It will be demonstrated that by changing the ratio of edge type to screw dislocations the resistivity of the layer can be changed by a few orders of magnitude.

Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing

NASA Astrophysics Data System (ADS)

Akazawa, Masamichi; Yokota, Naoshige; Uetake, Kei

2018-02-01

We report experimental results for the detection of deep-level defects in GaN after Mg ion implantation before high-temperature annealing. The n-type GaN samples were grown on GaN free-standing substrates by metalorganic vapor phase epitaxy. Mg ions were implanted at 50 keV with a small dosage of 1.5×1011 cm-2, which did not change the conduction type of the n-GaN. By depositing Al2O3 and a Ni/Au electrode onto the implanted n-GaN, metal-oxide-semiconductor (MOS) diodes were fabricated and tested. The measured capacitance-voltage (C-V) characteristics showed a particular behavior with a plateau region and a region with an anomalously steep slope. Fitting to the experimental C-V curves by simulation showed the existence of deep-level defects and a reduction of the carrier concentration near the GaN surface. By annealing at 800oC, the density of the deep-level defects was reduced and the carrier concentration partially recovered.

Fullerene-like WS(2) nanoparticles and nanotubes by the vapor-phase synthesis of WCl(n) and H(2)S.

PubMed

Margolin, A; Deepak, F L; Popovitz-Biro, R; Bar-Sadan, M; Feldman, Y; Tenne, R

2008-03-05

Inorganic fullerene-like (IF) nanoparticles and nanotubes of WS(2) were synthesized by a gas phase reaction starting from WCl(n) (n = 4, 5, 6) and H(2)S. The effect of the various metal chloride precursors on the formation of the products was investigated during the course of the study. Various parameters have been studied to understand the growth and formation of the IF-WS(2) nanoparticles and nanotubes. The parameters that have been studied include flow rates of the various carrier gases, heating of the precursor metal chlorides and the temperature at which the reactions were carried out. The best set of conditions wherein maximum yields of the high quality pure-phase IF-WS(2) nanoparticles and nanotubes are obtained have been identified. A detailed growth mechanism has been outlined to understand the course of formation of the various products of WS(2).

LNG carrier using membrane tank system delivered

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1993-12-06

The world's first LNG carrier that incorporates the Technigaz Mark 3 membrane tank system was delivered in October to its owner, Asia LNG Transport Sdn. Bhd., a joint venture between Nippon Yusen K.K. and Perbadanan Nasional Shipping Line Berhad of Malaysia. NKK built the 18,800 cu m, fully double-hull carrier Aman Bintulu at its Tsu works. Construction was completed in September with more than 2 months of sea trials and gas tests using [minus]190 C. Liquid nitrogen and final gas trails with LNG. The orthogonally corrugated stainless membrane primary barrier and the triplex (aluminum foil/fiber glass cloth) composite-material secondary barriermore » prevent LNG from leaking in the event of an accident.« less

High free carrier concentration in p-GaN grown on AlN substrates

NASA Astrophysics Data System (ADS)

Sarkar, Biplab; Mita, Seiji; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Tweedie, James; Bryan, Isaac; Bryan, Zachary; Kirste, Ronny; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

2017-07-01

A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 1018 cm-3 and resistivity as low as 0.7 Ω cm are reported for p-GaN layers grown by metalorganic vapor phase epitaxy on single crystal AlN substrates. Temperature dependent Hall measurements confirmed a much lower activation energy, 60-80 mV, for p-GaN grown on AlN as compared to sapphire substrates; the lowering of the activation energy was due to screening of Coulomb potential by free carriers. It is also shown that a higher doping density (more than 5 × 1019 cm-3) can be achieved in p-GaN/AlN without the onset of self-compensation.

Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods.

PubMed

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Heilmann, Martin; Yang, Jianfeng; Dai, Xi; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2016-11-23

Using advanced two-photon excitation confocal microscopy, associated with time-resolved spectroscopy, we characterize InGaN/GaN multiple quantum wells on nanorod heterostructures and demonstrate the passivation effect of a KOH treatment. High-quality InGaN/GaN nanorods were fabricated using nanosphere lithography as a candidate material for light-emitting diode devices. The depth- and time-resolved characterization at the nanoscale provides detailed carrier dynamic analysis helpful for understanding the optical properties. The nanoscale spatially resolved images of InGaN quantum well and defects were acquired simultaneously. We demonstrate that nanorod etching improves light extraction efficiency, and a proper KOH treatment has been found to reduce the surface defects efficiently and enhance the luminescence. The optical characterization techniques provide depth-resolved and time-resolved carrier dynamics with nanoscale spatially resolved mapping, which is crucial for a comprehensive and thorough understanding of nanostructured materials and provides novel insight into the improvement of materials fabrication and applications.

Thermal and Evolved Gas Analysis of Calcite Under Reduced Operating Pressures: Implications for the 2011 MSL Sample Analysis at Mars (SAM) Instrument

NASA Technical Reports Server (NTRS)

Lauer, H. V. Jr.; Ming, D. W.; Sutter, B.; Mahaffy, P. R.

2010-01-01

The Mars Science Laboratory (MSL) is scheduled for launch in 2011. The science objectives for MSL are to assess the past or present biological potential, to characterize the geology, and to investigate other planetary processes that influence habitability at the landing site. The Sample Analysis at Mars (SAM) is a key instrument on the MSL payload that will explore the potential habitability at the landing site [1]. In addition to searching for organic compounds, SAM will have the capability to characterized evolved gases as a function of increasing temperature and provide information on the mineralogy of volatile-bearing phases such as carbonates, sulfates, phyllosilicates, and Fe-oxyhydroxides. The operating conditions in SAM ovens will be maintained at 30 mb pressure with a He carrier gas flowing at 1 sccm. We have previously characterized the thermal and evolved gas behaviors of volatile-bearing species under reduced pressure conditions that simulated operating conditions of the Thermal and Evolved Gas Analyzer (TEGA) that was onboard the 2007 Mars Phoenix Scout Mission [e.g., 2-8]. TEGA ovens operated at 12 mb pressure with a N2 carrier gas flowing at 0.04 sccm. Another key difference between SAM and TEGA is that TEGA was able to perform differential scanning calorimetry whereas SAM only has a pyrolysis oven. The operating conditions for TEGA and SAM have several key parameter differences including operating pressure (12 vs 30 mb), carrier gas (N2 vs. He), and carrier gas flow rate (0.04 vs 1 sccm). The objectives of this study are to characterize the thermal and evolved gas analysis of calcite under SAM operating conditions and then compare it to calcite thermal and evolved gas analysis under TEGA operating conditions.

Cryogenically formed prestressed composite fiber-metal structures for O2/N2 high pressure gas tanks.

NASA Technical Reports Server (NTRS)

Gleich, D.

1971-01-01

Demonstration of high-structural-performance ARDEFORM cryoformed 301 stainless-steel glass-fiber-reinforced (GFR) vessels by room temperature tests of 13 1/2-in. diam spheres. Tests verified that the structural performance of ARDEFORM spherical GFR vessels not only exceeded that of all metal construction, but also bettered previous GFR experimental results by 50%. Achievement of essentially the full strength of fiberglass in a spherical wrap pattern was again verified. Significant weight advantages for this construction are projected for O2/N2 high-pressure gas tanks for Space Shuttle environmental control/life support system missions.

N-Functionalized MXenes: ultrahigh carrier mobility and multifunctional properties.

PubMed

Shao, Yangfan; Zhang, Fang; Shi, Xingqiang; Pan, Hui

2017-11-01

Two dimensional (2D) nanomaterials have demonstrated huge potential in wide applications from nanodevices to energy harvesting/storage. In this work, we propose a new class of 2D monolayers, nitrogen-functionalized MXenes (Nb 2 CN 2 and Ta 2 CN 2 ), based on density-functional theory (DFT). We find that these monolayers are direct semiconductors with near linear energy dispersions at the Γ point. M 2 CN 2 monolayers have significant small effective mass and show an ultra-high mobility of up to 10 6 cm 2 V -1 s -1 . We show that the electronic structures of the M 2 CN 2 monolayers can be easily controlled by biaxial and uniaxial strains. Importantly, the carrier mobility and direct band gap can be dramatically increased within a certain range of strain. A direct-indirect band gap transition can be triggered and the band gap can be tuned under strain. The tunable electronic properties are attributed to the structural changes and charge redistribution under stain. Our findings demonstrate that N-functionalized MXenes are promising materials for nanodevices with high speed and low power.

Preliminary studies of using preheated carrier gas for on-line membrane extraction of semivolatile organic compounds.

PubMed

Liu, Xinyu; Pawliszyn, Janusz

2007-04-01

In this paper, we present results for the on-line determination of semivolatile organic compounds (SVOCs) in air using membrane extraction with a sorbent interface-ion mobility spectrometry (MESI-IMS) system with a preheated carrier (stripping) gas. The mechanism of the mass transfer of SVOCs across a membrane was initially studied. In comparison with the extraction of volatile analytes, the mass transfer resistance that originated from the slow desorption from the internal membrane surface during the SVOC extraction processes should be taken into account. A preheated carrier gas system was therefore built to facilitate desorption of analytes from the internal membrane surface. With the benefit of a temperature gradient existing between the internal and external membrane surfaces, an increase in the desorption rate of a specific analyte at the internal surface and the diffusion coefficient within the membrane could be achieved while avoiding a decrease of the distribution constant on the external membrane interface. This technique improved both the extraction rate and response times of the MESI-IMS system for the analysis of SVOCs. Finally, the MESI-IMS system was shown to be capable of on-site measurement by monitoring selected polynuclear aromatic hydrocarbons emitted from cigarette smoke.

Determination of carrier diffusion length in p- and n-type GaN

NASA Astrophysics Data System (ADS)

Hafiz, Shopan; Metzner, Sebastian; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Gil, Bernard; Özgür, Ümit

2014-03-01

Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p- GaN or 1300 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photogeneration near the surface region by above bandgap excitation. Taking into consideration the absorption in the active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be about 92 ± 7 nm and 68 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively. Cross-sectional cathodoluminescence line-scan measurement was performed on a separate sample and the diffusion length in n-type GaN was measured to be 280 nm.

Strong carrier localization in stacking faults in semipolar (11-22) GaN

NASA Astrophysics Data System (ADS)

Okur, Serdal; Monavarian, Morteza; Das, Saikat; Izyumskaya, Natalia; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2015-03-01

The effects of stacking faults (SFs) on optical processes in epitaxially grown semipolar (1122) GaN on m-sapphire substrate have been investigated in detail using steady-state photoluminescence (PL) and time- and polarization-resolved PL. We demonstrate that the carrier recombination dynamics are substantially influenced due to strong carrier localization in the stacking faults. In addition to nonradiative recombination, carrier trapping/detrapping and carrier transfer between the stacking faults and donors are also found to be among the mechanisms affecting the recombination dynamics at different temperatures. PL decay times of both I1-type BSF and 3.31 eV SF (E-type BSF or prismatic stacking fault) do not show temperature dependence up to 80 K while 3.31 eV SF exhibits longer PL decay times (~3 ns) at low temperatures as compared to I1-type BSF (~1 ns), indicative of lower efficiency for radiative recombination. After 80 K, PL decay times decreased by power of ~-1 and ~-2 for 3.31 eV SF and I1-type BSF, respectively. It is obtained from radiative decay times with respect to temperature that the carrier localization becomes higher in I1-type BSF compared to 3.31 eV SF increasing the temperature. I1-type BSF also shows higher PL intensity, which is attributed to larger density, and therefore, larger contribution to recombination dynamics as compared to other type of stacking faults. Polarization-resolved PL measurements also revealed that the degree of polarization for the I1-type BSF (0.30) was twice that for the 3.31 eV SF.

Mechanism of high-fluence proton induced electrical degradation in AlGaN/GaN high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Lei, Zhifeng; Guo, Hongxia; Tang, Minghua; Peng, Chao; Zhang, Zhangang; Huang, Yun; En, Yunfei

2018-07-01

The effects of displacement damage induced by 3 and 6 MeV protons in AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated. For the 6 MeV protons at a dose of 5 × 1014 cm‑2, a 12% decrease in saturation current, a 3.8% decrease in the peak transconductance, a 0.3 V positive shift of the threshold voltage, and a three-to fourfold decrease in reverse gate leakage current are observed compared with the pre-irradiation values. The main degradation mechanism is considered to be the generation of deep trap states in the band gap, which remove electrons and reduce the carrier mobility in a two-dimensional electron gas (2DEG). Both the carrier removal rate and negatively charged trap density can be extracted, which shows that about 3500 proton injections lead to one carrier removal. Proton fluence and energy are found to be two key parameters that affect the degradation characteristics of irradiated GaN HEMTs.

Trace Gas Analyzer (TGA) program

NASA Technical Reports Server (NTRS)

1977-01-01

The design, fabrication, and test of a breadboard trace gas analyzer (TGA) is documented. The TGA is a gas chromatograph/mass spectrometer system. The gas chromatograph subsystem employs a recirculating hydrogen carrier gas. The recirculation feature minimizes the requirement for transport and storage of large volumes of carrier gas during a mission. The silver-palladium hydrogen separator which permits the removal of the carrier gas and its reuse also decreases vacuum requirements for the mass spectrometer since the mass spectrometer vacuum system need handle only the very low sample pressure, not sample plus carrier. System performance was evaluated with a representative group of compounds.

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

NASA Astrophysics Data System (ADS)

Sung Park, Pil; Reddy, Kongara M.; Nath, Digbijoy N.; Yang, Zhichao; Padture, Nitin P.; Rajan, Siddharth

2013-04-01

A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.

9 CFR 2.77 - Records: Carriers and intermediate handlers.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 9 Animals and Animal Products 1 2010-01-01 2010-01-01 false Records: Carriers and intermediate handlers. 2.77 Section 2.77 Animals and Animal Products ANIMAL AND PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE ANIMAL WELFARE REGULATIONS Records § 2.77 Records: Carriers and intermediate...

A hydrogen energy carrier. Volume 2: Systems analysis

NASA Technical Reports Server (NTRS)

Savage, R. L. (Editor); Blank, L. (Editor); Cady, T. (Editor); Cox, K. (Editor); Murray, R. (Editor); Williams, R. D. (Editor)

1973-01-01

A systems analysis of hydrogen as an energy carrier in the United States indicated that it is feasible to use hydrogen in all energy use areas, except some types of transportation. These use areas are industrial, residential and commercial, and electric power generation. Saturation concept and conservation concept forecasts of future total energy demands were made. Projected costs of producing hydrogen from coal or from nuclear heat combined with thermochemical decomposition of water are in the range $1.00 to $1.50 per million Btu of hydrogen produced. Other methods are estimated to be more costly. The use of hydrogen as a fuel will require the development of large-scale transmission and storage systems. A pipeline system similar to the existing natural gas pipeline system appears practical, if design factors are included to avoid hydrogen environment embrittlement of pipeline metals. Conclusions from the examination of the safety, legal, environmental, economic, political and societal aspects of hydrogen fuel are that a hydrogen energy carrier system would be compatible with American values and the existing energy system.

Synthesis of ultrasmooth nanostructured diamond films by microwave plasma chemical vapor deposition using a He/H(2)/CH(4)/N(2) gas mixture.

PubMed

Chowdhury, S; Hillman, Damon A; Catledge, Shane A; Konovalov, Valery V; Vohra, Yogesh K

2006-10-01

Ultrasmooth nanostructured diamond (USND) films were synthesized on Ti-6Al-4V medical grade substrates by adding helium in H(2)/CH(4)/N(2) plasma and changing the N(2)/CH(4) gas flow from 0 to 0.6. We were able to deposit diamond films as smooth as 6 nm (root-mean-square), as measured by an atomic force microscopy (AFM) scan area of 2 μm(2). Grain size was 4-5 nm at 71% He in (H(2) + He) and N(2)/CH(4) gas flow ratio of 0.4 without deteriorating the hardness (~50-60 GPa). The characterization of the films was performed with AFM, scanning electron microscopy, x-ray diffraction (XRD), Raman spectroscopy, and nanoindentation techniques. XRD and Raman results showed the nanocrystalline nature of the diamond films. The plasma species during deposition were monitored by optical emission spectroscopy. With increasing N(2)/CH(4) feedgas ratio (CH(4) was fixed) in He/H(2)/CH(4)/N(2) plasma, a substantial increase of CN radical (normalized by Balmer H(α) line) was observed along with a drop in surface roughness up to a critical N(2)/CH(4) ratio of 0.4. The CN radical concentration in the plasma was thus correlated to the formation of ultrasmooth nanostructured diamond films.

Calcination Method Synthesis of SnO2/g-C3N4 Composites for a High-Performance Ethanol Gas Sensing Application

PubMed Central

Cao, Jianliang; Qin, Cong; Wang, Yan; Zhang, Bo; Gong, Yuxiao; Zhang, Huoli; Sun, Guang; Bala, Hari; Zhang, Zhanying

2017-01-01

The SnO2/g-C3N4 composites were synthesized via a facile calcination method by using SnCl4·5H2O and urea as the precursor. The structure and morphology of the as-synthesized composites were characterized by the techniques of X-ray diffraction (XRD), the field-emission scanning electron microscopy and transmission electron microscopy (SEM and TEM), energy dispersive spectrometry (EDS), thermal gravity and differential thermal analysis (TG-DTA), and N2-sorption. The analysis results indicated that the as-synthesized samples possess the two dimensional structure. Additionally, the SnO2 nanoparticles were highly dispersed on the surface of the g-C3N4nanosheets. The gas-sensing performance of the as-synthesized composites for different gases was tested. Moreover, the composite with 7 wt % g-C3N4 content (SnO2/g-C3N4-7) SnO2/g-C3N4-7 exhibits an admirable gas-sensing property to ethanol, which possesses a higher response and better selectivity than that of the pure SnO2-based sensor. The high surface area of the SnO2/g-C3N4 composite and the good electronic characteristics of the two dimensional graphitic carbon nitride are in favor of the elevated gas-sensing property. PMID:28468245

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

NASA Astrophysics Data System (ADS)

Wu, Haiyan; Ma, Ziguang; Jiang, Yang; Wang, Lu; Yang, Haojun; Li, Yangfeng; Zuo, Peng; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Liu, Wuming; Chen, Hong

2016-11-01

A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported. According to the well established light-to-electricity conversion theory, quantum wells (QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels, owing to quantum confinement, and cannot form a photocurrent. We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent, indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs. We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions. Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340) and the Innovative Clean-energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

Kinetic efficiency of polar monolithic capillary columns in high-pressure gas chromatography.

PubMed

Kurganov, A A; Korolev, A A; Shiryaeva, V E; Popova, T P; Kanateva, A Yu

2013-11-08

Poppe plots were used for analysis of kinetic efficiency of monolithic sorbents synthesized in quartz capillaries for utilization in high-pressure gas chromatography. Values of theoretical plate time and maximum number of theoretical plates occurred to depend significantly on synthetic parameters such as relative amount of monomer in the initial polymerization mixture, temperature and polymerization time. Poppe plots let one to find synthesis conditions suitable either for high-speed separations or for maximal efficiency. It is shown that construction of kinetic Poppe curves using potential Van Deemter data demands compressibility of mobile phase to be taken into consideration in the case of gas chromatography. Model mixture of light hydrocarbons C1 to C4 was then used for investigation of influence of carrier gas nature on kinetic efficiency of polymeric monolithic columns. Minimal values of theoretical plate times were found for CO2 and N2O carrier gases. Copyright © 2013 Elsevier B.V. All rights reserved.

PMS2 monoallelic mutation carriers: the known unknown

PubMed Central

Goodenberger, McKinsey L.; Thomas, Brittany C.; Riegert-Johnson, Douglas; Boland, C. Richard; Plon, Sharon E.; Clendenning, Mark; Ko Win, Aung; Senter, Leigha; Lipkin, Steven M.; Stadler, Zsofia K.; Macrae, Finlay A.; Lynch, Henry T.; Weitzel, Jeffrey N.; de la Chapelle, Albert; Syngal, Sapna; Lynch, Patrick; Parry, Susan; Jenkins, Mark A.; Gallinger, Steven; Holter, Spring; Aronson, Melyssa; Newcomb, Polly A.; Burnett, Terrilea; Le Marchand, Loïc; Pichurin, Pavel; Hampel, Heather; Terdiman, Jonathan P.; Lu, Karen H.; Thibodeau, Stephen; Lindor, Noralane M.

2016-01-01

Germline mutations in MLH1, MSH2, MSH6 and PMS2 have been shown to cause Lynch syndrome. The penetrance for cancer and tumor spectrum has been repeatedly studied and multiple professional societies have proposed clinical management guidelines for affected individuals. Several studies have demonstrated a reduced penetrance for monoallelic carriers of PMS2 mutations compared to the other mismatch repair (MMR) genes, but clinical management guidelines have largely proposed the same screening recommendations for all MMR gene carriers. The authors considered whether enough evidence existed to propose new screening guidelines specific to PMS2 mutation carriers with regard to age of onset and frequency of colonic screening. Published reports of PMS2 germline mutations were combined with unpublished cases from the authors’ research registries and clinical practices, and a discussion of potential modification of cancer screening guidelines was pursued. A total of 234 monoallelic PMS2 mutation carriers from 170 families were included. Approximately 8% of those with CRC were diagnosed under age 30 and each of these tumors presented on the left-side of the colon. As it is currently unknown what causes the early-onset of CRC in some families with monoallelic PMS2 germline mutations, the authors recommend against reducing cancer surveillance guidelines in families found having monoallelic PMS2 mutations in spite of the documented reduced penetrance. PMID:25856668

Research on energy efficiency design index for sea-going LNG carriers

NASA Astrophysics Data System (ADS)

Lin, Yan; Yu, Yanyun; Guan, Guan

2014-12-01

This paper describes the characteristics of liquefied natural gas (LNG) carriers briefly. The LNG carrier includes power plant selection, vapor treatment, liquid cargo tank type, etc. Two parameters—fuel substitution rate and recovery of boil of gas (BOG) volume to energy efficiency design index (EEDI) formula are added, and EEDI formula of LNG carriers is established based on ship EEDI formula. Then, based on steam turbine propulsion device of LNG carriers, mathematical models of LNG carriers' reference line value are established in this paper. By verification, the EEDI formula of LNG carriers described in this paper can provide a reference for LNG carrier EEDI calculation and green shipbuilding.

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN [Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial n-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Collins, K. C.; Armstrong, Andrew M.; Allerman, Andrew A.

Here, inherent advantages of wide bandgap materials make GaN-based devices attractive for power electronics and applications in radiation environments. Recent advances in the availability of wafer-scale, bulk GaN substrates have enabled the production of high quality, low defect density GaN devices, but fundamental studies of carrier transport and radiation hardness in such devices are lacking. Here, we report measurements of the hole diffusion length in low threading dislocation density (TDD), homoepitaxial n-GaN, and high TDD heteroepitaxial n-GaN Schottky diodes before and after irradiation with 2.5 MeV protons at fluences of 4–6 × 10 13 protons/cm 2. We also characterize themore » specimens before and after irradiation using electron beam-induced-current (EBIC) imaging, cathodoluminescence, deep level optical spectroscopy (DLOS), steady-state photocapacitance, and lighted capacitance-voltage (LCV) techniques. We observe a substantial reduction in the hole diffusion length following irradiation (50%–55%) and the introduction of electrically active defects which could be attributed to gallium vacancies and associated complexes (V Ga-related), carbon impurities (C-related), and gallium interstitials (Ga i). EBIC imaging suggests long-range migration and clustering of radiation-induced point defects over distances of ~500 nm, which suggests mobile Ga i. Following irradiation, DLOS and LCV reveal the introduction of a prominent optical energy level at 1.9 eV below the conduction band edge, consistent with the introduction of Ga i.« less

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN [Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial n-GaN

DOE PAGES

Collins, K. C.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-12-21

Here, inherent advantages of wide bandgap materials make GaN-based devices attractive for power electronics and applications in radiation environments. Recent advances in the availability of wafer-scale, bulk GaN substrates have enabled the production of high quality, low defect density GaN devices, but fundamental studies of carrier transport and radiation hardness in such devices are lacking. Here, we report measurements of the hole diffusion length in low threading dislocation density (TDD), homoepitaxial n-GaN, and high TDD heteroepitaxial n-GaN Schottky diodes before and after irradiation with 2.5 MeV protons at fluences of 4–6 × 10 13 protons/cm 2. We also characterize themore » specimens before and after irradiation using electron beam-induced-current (EBIC) imaging, cathodoluminescence, deep level optical spectroscopy (DLOS), steady-state photocapacitance, and lighted capacitance-voltage (LCV) techniques. We observe a substantial reduction in the hole diffusion length following irradiation (50%–55%) and the introduction of electrically active defects which could be attributed to gallium vacancies and associated complexes (V Ga-related), carbon impurities (C-related), and gallium interstitials (Ga i). EBIC imaging suggests long-range migration and clustering of radiation-induced point defects over distances of ~500 nm, which suggests mobile Ga i. Following irradiation, DLOS and LCV reveal the introduction of a prominent optical energy level at 1.9 eV below the conduction band edge, consistent with the introduction of Ga i.« less

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si 3N 4 passivation

NASA Astrophysics Data System (ADS)

Cheng, Kai; Degroote, S.; Leys, M.; Medjdoub, F.; Derluyn, J.; Sijmus, B.; Germain, M.; Borghs, G.

2011-01-01

AlN/GaN heterostructures are very attractive because their theoretical two-dimensional electron gas (2DEG) density may exceed 5×10 13/cm 2[1]. However, there are very few reports on AlN/GaN heterostructures grown by MOVPE. In this work, we show that good quality AlN layers can be grown on GaN at a relatively low growth temperature when TMIn is added to the carrier gas flow as a surfactant. Analysis by RBS revealed that at a growth temperature of 900 °C or higher no Indium is actually incorporated. Various thicknesses of AlN are grown, from 2 to 8 nm. Finally, 2-3 nm in situ Si 3N 4 is deposited in order to protect the AlN surface and thus prevent stress relaxation. AFM revealed that the root-mean-square (RMS) roughness in a 1×1 μm 2 area is 0.25 nm. When the AlN thickness reaches 8 nm, the sheet resistance can be as low as 186±3 Ω/□. Van der Pauw-Hall measurements show that the electron density is about 2.5×10 13/cm 2 with electron mobility exceeding 1140 cm 2/V s when extra 50 nm PECVD SiN is deposited.

Hydrodynamic characteristics of airlift nitrifying reactor using carrier-induced granular sludge.

PubMed

Jin, Ren-Cun; Zheng, Ping; Mahmood, Qaisar; Zhang, Lei

2008-09-15

Since nitrification is the rate-limiting step in the biological nitrogen removal from wastewater, many studies have been conducted on the immobilization of nitrifying bacteria. A laboratory-scale investigation was carried out to scrutinize the effectiveness of activated carbon carrier addition for granulation of nitrifying sludge in a continuous-flow airlift bioreactor and to study the hydrodynamics of the reactor with carrier-induced granules. The results showed that the granular sludge began to appear and matured 60 and 108 days, respectively, after addition of carriers, while no granule was observed in the absence of carriers in the control test. The mature granules had a diameter of 0.5-5 mm (1.6 mm in average), settling velocity 22.3-55.8 m h(-1) and specific gravity of 1.086. The relationship between the two important hydrodynamic coefficients, i.e. gas holdup and liquid circulation velocity, and the superficial gas velocity were established by a simple model and were confirmed experimentally. The model also could predict the critical superficial gas velocity for liquid circulation and that for granules circulation, with respective values of 1.017 and 2.662 cm min(-1), accurately.

PMS2 monoallelic mutation carriers: the known unknown.

PubMed

Goodenberger, McKinsey L; Thomas, Brittany C; Riegert-Johnson, Douglas; Boland, C Richard; Plon, Sharon E; Clendenning, Mark; Win, Aung Ko; Senter, Leigha; Lipkin, Steven M; Stadler, Zsofia K; Macrae, Finlay A; Lynch, Henry T; Weitzel, Jeffrey N; de la Chapelle, Albert; Syngal, Sapna; Lynch, Patrick; Parry, Susan; Jenkins, Mark A; Gallinger, Steven; Holter, Spring; Aronson, Melyssa; Newcomb, Polly A; Burnett, Terrilea; Le Marchand, Loïc; Pichurin, Pavel; Hampel, Heather; Terdiman, Jonathan P; Lu, Karen H; Thibodeau, Stephen; Lindor, Noralane M

2016-01-01

Germ-line mutations in MLH1, MSH2, MSH6, and PMS2 have been shown to cause Lynch syndrome. The penetrance of the cancer and tumor spectrum has been repeatedly studied, and multiple professional societies have proposed clinical management guidelines for affected individuals. Several studies have demonstrated a reduced penetrance for monoallelic carriers of PMS2 mutations compared with the other mismatch repair (MMR) genes, but clinical management guidelines have largely proposed the same screening recommendations for all MMR gene carriers. The authors considered whether enough evidence existed to propose new screening guidelines specific to PMS2 mutation carriers with regard to age at onset and frequency of colonic screening. Published reports of PMS2 germ-line mutations were combined with unpublished cases from the authors' research registries and clinical practices, and a discussion of potential modification of cancer screening guidelines was pursued. A total of 234 monoallelic PMS2 mutation carriers from 170 families were included. Approximately 8% of those with colorectal cancer (CRC) were diagnosed before age 30, and each of these tumors presented on the left side of the colon. As it is currently unknown what causes the early onset of CRC in some families with monoallelic PMS2 germline mutations, the authors recommend against reducing cancer surveillance guidelines in families found having monoallelic PMS2 mutations in spite of the reduced penetrance.Genet Med 18 1, 13-19.

Exclusion of phospholipases (PLs)-producing bacteria in raw milk flushed with nitrogen gas (N(2)).

PubMed

Munsch-Alatossava, Patricia; Gursoy, Oguz; Alatossava, Tapani

2010-01-01

Prolonged cold storage of raw milks favors the growth of psychrotrophs, which produce heat-resistant exoenzymes of considerable spoilage potential; the bacterial proteases and lipases affect raw milk quality; among them phospholipases (PLs) may target the milk fat globule. More importantly, bacterial PLs are key virulence factors for numerous species. Two studies examined the use of nitrogen (N(2)) gas and examined its effect on psychrotrophs, proteases and lipase producers when the milk was stored in closed vessels; however, the effect on PLs producers is unknown. Here we show that by considering an open system the PLs producers were sooner or later excluded in raw milk (whereas the PLs producers in the non-treated controls culminated at 10(8)CFU/ml), by effective gas treatments that bring oxygen (O(2)) levels in milk lower than 0.1ppm. No increase of the PLs producers among the anaerobes was noticed during the course of the experiments. In the experiments performed at 6.0 degrees C, the delay after which the PLs producers were no longer detectable seemed independent of the initial level of PLs producers in raw milk (lower than 10(3)CFU/ml). We anticipate that flushing pure N(2) gas in raw milk tanks, considered as open systems, along the cold chain of raw milk storage and transportation, may be an additional technique to control psychrotrophs, and may also constitute an interesting perspective for limiting their spoilage and pathogenic potential in food materials in general.

Tunable one-dimensional electron gas carrier densities at nanostructured oxide interfaces

DOE PAGES

Zhang, Lipeng; Xu, Haixuan; Kent, Paul R. C.; ...

2016-05-06

The emergence of two-dimensional metallic states at the LaAlO 3/SrTiO 3 (LAO/STO) heterostructure interface is known to occur at a critical thickness of four LAO over layers. This insulator-to-metal transition can be explained through the polar catastrophe mechanism arising from the divergence of the electrostatic potential at the LAO surface. Here, we demonstrate that nanostructuring can be effective in reducing or eliminating this critical thickness. Employing a modified polar catastrophe" model, we demonstrate that the nanowire heterostructure electrostatic potential diverges more rapidly as a function of layer thickness than in a regular heterostructure. Our first principles calculations indicate that formore » nanowire heterostructure geometries a one-dimensional electron gas (1DEG) can be induced, consistent with recent experimental observations of 1D conductivity in LAO/STO steps. Similar to LAO/STO 2DEGs, we predict that the 1D charge density will decay laterally within a few unit cells away from the nanowire; thus providing a mechanism for tuning the carrier behavior between 1D and 2D conductivity. Furthermore, our work provides insight into the creation and manipulation of charge density at an oxide heterostructure interface and therefore may be beneficial for future nanoelectronic devices and for the engineering of novel quantum phases.« less

The influence of selective chemical doping on clean, low-carrier density SiC epitaxial graphene

NASA Astrophysics Data System (ADS)

Chuang, Chiashain; Yang, Yanfei; Huang, Lung-I.; Liang, Chi-Te; Elmquist, Randolph E.; National Institute of of Standards; Technology Collaboration; National Taiwan University, Department of Physics Collaboration

2015-03-01

The charge-transfer effect of ambient air on magneto-transport in polymer-free SiC graphene was investigated. Interestingly, adsorption of atmospheric gas molecules on clean epitaxial graphene can reduce the carrier density to near charge neutrality, allowing observation of highly precise v = 2 quantum Hall plateaus. The atmospheric adsorbates were reproducibly removed and pure gases (N2, O2, CO2, H2O) were used to form new individual adsorbates on SiC graphene. Our experimental results (τt/τq ~ 2) support the theoretical predictions for the ratio of transport relaxation time τt to quantum lifetime τq in clean graphene. The analysis of Shubnikov-de Haas oscillations at intermediate doping levels indicates that the carrier scattering is reduced by water and oxygen so as to increase both the classical and quantum mobility. This study points to the key dopant gases in ambient air and also paves the way towards extremely precise quantized Hall resistance standards in epitaxial graphene systems with carrier density tuned by exposure to highly pure gases and vacuum annealing treatment. National Institute of Standard and Technology.

Carrier Transport and Effective Barrier Height of Low Resistance Metal Contact to Highly Mg-Doped p-GaN

NASA Astrophysics Data System (ADS)

Park, Youngjun; Kim, Hyunsoo

2011-08-01

The effective barrier height and carrier transport mechanism of low resistance Ag-based contact to highly Mg-doped p-GaN were investigated. The specific contact resistance obtained was as low as 7.0×10-4 Ω cm2. The electrical resistivity of p-GaN was found to increase depending on ˜T-1/4, indicating variable-range hopping (VRH) conduction through Mg-related deep-level defects. Based on the VRH conduction model, the effective barrier height for carrier transport could be measured as 0.12 eV, which is low enough to explain the formation of excellent ohmic contact. The deep-level defects were also found to induce surface Fermi pinning.

SiN{sub x} layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Yunae; Kim, Eunah; Gwon, Minji

2015-10-12

We compared nanopatterned Si solar cells with and without SiN{sub x} layers. The SiN{sub x} layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN{sub x} layer played a crucial role in the improved carrier collection ofmore » the nanostructured solar cells.« less

Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Subhashis, E-mail: subhashis.ds@gmail.com; Majumdar, S.; Kumar, R.

2015-08-28

Physics based modeling of AlGaN/GaN heterostructure Schottky diode gas sensor has been investigated for high sensitivity and linearity of the device. Here the surface and heterointerface properties are greatly exploited. The dependence of two dimensional electron gas (2DEG) upon the surface charges is mainly utilized. The simulation of Schottky diode has been done in Technology Computer Aided Design (TCAD) tool and I-V curves are generated, from the I-V curves 76% response has been recorded in presence of 500 ppm gas at a biasing voltage of 0.95 Volt.

Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers

NASA Astrophysics Data System (ADS)

Reddy, Pramod; Kaess, Felix; Tweedie, James; Kirste, Ronny; Mita, Seiji; Collazo, Ramon; Sitar, Zlatko

2017-10-01

Compensating point defect reduction in wide bandgap semiconductors is possible by above bandgap illumination based defect quasi Fermi level (dQFL) control. The point defect control technique employs excess minority carriers that influence the dQFL of the compensator, increase the corresponding defect formation energy, and consequently are responsible for point defect reduction. Previous studies on various defects in GaN and AlGaN have shown good agreement with the theoretical model, but no direct evidence for the role of minority carriers was provided. In this work, we provide direct evidence for the role of minority carriers in reducing point defects by studying the predicted increase in work done against defect (CN-1) formation with the decrease in the Fermi level (free carrier concentration) in Si doped GaN at a constant illumination intensity. Comparative defect photoluminescence measurements on illuminated and dark regions of GaN show an excellent quantitative agreement with the theory by exhibiting a greater reduction in yellow luminescence attributed to CN-1 at lower doping, thereby providing conclusive evidence for the role of the minority carriers in Fermi level control-based point defect reduction.

Carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool

NASA Astrophysics Data System (ADS)

Cai, Yu; Sha, Shuang

2016-09-01

This paper proposes a new carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool used in a cylindrical borehole environment during oil-based mud drilling processes. The new tool is an orthogonal frequency division multiplexing access-based contactless multi-measurand detection tool. The tool can measure formation resistivity in different azimuthal angles and elevational depths. It can measure many more measurands simultaneously in a specified bandwidth than the legacy frequency division multiplexing multi-measurand tool without a channel-select filter while avoiding inter-carrier interference. The paper also shows that formation resistivity is not sensitive to frequency in certain frequency bands. The average resistivity collected from N subcarriers can increase the measurement of the signal-to-noise ratio (SNR) by N times given no amplitude clipping in the current-injection electrode. If the clipping limit is taken into account, with the phase rotation of each single carrier, the amplitude peak-to-average ratio can be reduced by 3 times, and the SNR can achieve a 9/N times gain over the single-carrier system. The carrier-interleaving technique is also introduced to counter the carrier frequency offset (CFO) effect, where the CFO will cause inter-pad interference. A qualitative analysis and simulations demonstrate that block-interleaving performs better than tone-interleaving when coping with a large CFO. The theoretical analysis also suggests that increasing the subcarrier number can increase the measurement speed or enhance elevational resolution without sacrificing receiver performance. The complex orthogonal multi-pad multi-carrier resistivity logging tool, in which all subcarriers are complex signals, can provide a larger available subcarrier pool than other types of transceivers.

Adiabatic wavelength redshift by dynamic carrier depletion using p -i -n -diode-loaded photonic crystal waveguides

NASA Astrophysics Data System (ADS)

Kondo, K.; Baba, T.

2018-03-01

We demonstrate an adiabatic wavelength redshift using dynamic carrier depletion. Free carriers are first induced through two-photon absorption of a control pulse and then extracted by a reverse-biased p-i-n diode formed on a Si photonic crystal waveguide, resulting in rapid carrier depletion. A copropagating signal pulse is redshifted by the consequent increase in refractive index. We experimentally evaluated the dynamics of the carrier depletion by the pump-probe method and explored suitable conditions for adiabatic redshift. The signal's redshift was observed, and was confirmed to originate in the dynamic carrier depletion. The redshift was experimentally determined as 0.21 nm.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

PubMed

Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

2012-11-07

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

Conversion of nitrogen oxides in N2:O2:CO2 and N2:O2:CO2:NO2 mixtures subjected to a dc corona discharge

NASA Astrophysics Data System (ADS)

Dors, Mirosław; Mizeraczyk, Jerzy

1996-10-01

This paper concerns the influence of a direct current (dc) corona discharge on production and reduction of NO, NO2 and N2O in N2:O2:CO2 and N2:O2:CO2:NO2 mixtures. The corona discharge was generated in a needle-to-plate reactor. The positively polarized electrode consisted of 7 needles. The grounded electrode was a stainless steel plate. The gas flow rate through the reactor was varied from 28 to 110 cm3/s. The time-averaged discharge current ranged from 0 to 6 mA. It was found that in the N2:O2:CO2 mixture the corona discharge produced NO, NO2 and N2O. In the N2:O2:CO2:NO2 mixture the reduction of NO2 was between 6-56%, depending on the concentration of O2, gas flow rate and corona discharge current. The NO2 reduction was accompanied by production of NO and N2O. The results show that efficient reduction of nitrogen oxides by a corona discharge cannot be expected in the mixtures containing N2 and O2 if reducing additives are not employed.

A photoacoustic spectrometer for trace gas detection

NASA Astrophysics Data System (ADS)

Telles, E. M.; Bezerra, E.; Scalabrin, A.

2005-06-01

A high-resolution external laser photoacoustic spectrometer has been developed for trace gas detection with absorption transitions in coincidence with CO2 laser emission lines (9,2-10,9 μm: 920-1086 cm-1). The CO2 laser operates in 90 CW lines with power of up to 15 W. A PC-controlled step motor can tune the laser lines. The resonance frequency of first longitudinal mode of the photoacoustic cell is at 1600 Hz. The cell Q-factor and cell constant are measured close to 50 and 28 mVcmW-1, respectively. The spectrometer has been tested in preliminary studies to analyze the absorption transitions of ozone (O_3). The ethylene (C_2H_4) from papaya fruit is also investigated using N2 as carrier gas at a constant flow rate.

Evaluation of carrier agents for hyperpolarized xenon MRI

NASA Technical Reports Server (NTRS)

Venkatesh, A. K.; Zhao, L.; Balamore, D.; Jolesz, F. A.; Albert, M. S.

2000-01-01

Several biocompatible carrier agents, in which xenon is highly soluble and has a long T(1), were tested, and injected in living rats. These included saline, Intralipid suspension, perfluorocarbon emulsion and (129)Xe gas-filled liposomes. The T(1) of (129)Xe in these compounds ranged from 47 to 116 s. Vascular injection of these carrier agents was tolerated well, encouraging their use for further experiments in live animals. In vivo spectra, obtained from gas-filled liposomes and perfluorocarbon solutions, suggest that these carrier agents have potential for use in angiography and perfusion imaging. Copyright 2000 John Wiley & Sons, Ltd.

In-situ generation of carrier gases for scientific analyses on Mars

NASA Technical Reports Server (NTRS)

Finn, J. E.; Sridhar, K. R.

1997-01-01

The search for useful raw materials on planetary surfaces will involve various scientific analyses of soil and rock samples. The devices performing these measurements often require inert carrier gases for moving analytes and purging instrumentation. At present, the carrier or sweep gas must be carried from Earth in a compressed gas cylinder, and so the supply of this depletable resource sets a hard limit on the (flexible) life span of the experiment. If a suitable carrier gas could be produced in-situ, then the scientific return of exploration missions could be extended and enhanced greatly. Many more samples could be analyzed, long-ranging rovers could have independent gas supplies, and designs could have added flexibility with respect to gas consumption.

Influence of gate width on gate-channel carrier mobility in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Yang, Ming; Ji, Qizheng; Gao, Zhiliang; Zhang, Shufeng; Lin, Zhaojun; Yuan, Yafei; Song, Bo; Mei, Gaofeng; Lu, Ziwei; He, Jihao

2017-11-01

For the fabricated AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths, the gate-channel carrier mobility is experimentally obtained from the measured current-voltage and capacitance-voltage curves. Under each gate voltage, the mobility gets lower with gate width increasing. Analysis shows that the phenomenon results from the polarization Coulomb field (PCF) scattering, which originates from the irregularly distributed polarization charges at the AlGaN/GaN interface. The device with a larger gate width is with a larger PCF scattering potential and a stronger PCF scattering intensity. As a function of gate width, PCF scattering potential shows a same trend with the mobility variation. And the theoretically calculated mobility values fits well with the experimentally obtained values. Varying gate widths will be a new perspective for the improvement of device characteristics by modulating the gate-channel carrier mobility.

Candidate genetic modifiers for breast and ovarian cancer risk in BRCA1 and BRCA2 mutation carriers

PubMed Central

Peterlongo, Paolo; Chang-Claude, Jenny; Moysich, Kirsten B.; Rudolph, Anja; Schmutzler, Rita K.; Simard, Jacques; Soucy, Penny; Eeles, Rosalind A.; Easton, Douglas F.; Hamann, Ute; Wilkening, Stefan; Chen, Bowang; Rookus, Matti A.; Schmidt, Marjanka K; van der Baan, Frederieke H.; Spurdle, Amanda B.; Walker, Logan C.; Lose, Felicity; Maia, Ana-Teresa; Montagna, Marco; Matricardi, Laura; Lubinski, Jan; Jakubowska, Anna; Gómez Garcia, Encarna B.; Olopade, Olufunmilayo I.; Nussbaum, Robert L.; Nathanson, Katherine L.; Domchek, Susan M.; Rebbeck, Timothy R.; Arun, Banu K.; Karlan, Beth Y.; Orsulic, Sandra; Lester, Jenny; Chung, Wendy K.; Miron, Alex; Southey, Melissa C.; Goldgar, David E.; Buys, Saundra S.; Janavicius, Ramunas; Dorfling, Cecilia M.; van Rensburg, Elizabeth J.; Ding, Yuan Chun; Neuhausen, Susan L.; Hansen, Thomas V. O.; Gerdes, Anne-Marie; Ejlertsen, Bent; Jønson, Lars; Osorio, Ana; Martínez-Bouzas, Cristina; Benitez, Javier; Conway, Edye E.; Blazer, Kathleen R.; Weitzel, Jeffrey N.; Manoukian, Siranoush; Peissel, Bernard; Zaffaroni, Daniela; Scuvera, Giulietta; Barile, Monica; Ficarazzi, Filomena; Mariette, Frederique; Fortuzzi, Stefano; Viel, Alessandra; Giannini, Giuseppe; Papi, Laura; Martayan, Aline; Tibiletti, Maria Grazia; Radice, Paolo; Vratimos, Athanassios; Fostira, Florentia; Garber, Judy E.; Donaldson, Alan; Brewer, Carole; Foo, Claire; Evans, D. Gareth R.; Frost, Debra; Eccles, Diana; Brady, Angela; Cook, Jackie; Tischkowitz, Marc; Adlard, Julian; Barwell, Julian; Walker, Lisa; Izatt, Louise; Side, Lucy E.; Kennedy, M. John; Rogers, Mark T.; Porteous, Mary E.; Morrison, Patrick J.; Platte, Radka; Davidson, Rosemarie; Hodgson, Shirley V.; Ellis, Steve; Cole, Trevor; Godwin, Andrew K.; Claes, Kathleen; Van Maerken, Tom; Meindl, Alfons; Gehrig, Andrea; Sutter, Christian; Engel, Christoph; Niederacher, Dieter; Steinemann, Doris; Plendl, Hansjoerg; Kast, Karin; Rhiem, Kerstin; Ditsch, Nina; Arnold, Norbert; Varon-Mateeva, Raymonda; Wappenschmidt, Barbara; Wang-Gohrke, Shan; Bressac-de Paillerets, Brigitte; Buecher, Bruno; Delnatte, Capucine; Houdayer, Claude; Stoppa-Lyonnet, Dominique; Damiola, Francesca; Coupier, Isabelle; Barjhoux, Laure; Venat-Bouvet, Laurence; Golmard, Lisa; Boutry-Kryza, Nadia; Sinilnikova, Olga M.; Caron, Olivier; Pujol, Pascal; Mazoyer, Sylvie; Belotti, Muriel; Piedmonte, Marion; Friedlander, Michael L.; Rodriguez, Gustavo C.; Copeland, Larry J; de la Hoya, Miguel; Segura, Pedro Perez; Nevanlinna, Heli; Aittomäki, Kristiina; van Os, Theo A.M.; Meijers-Heijboer, Hanne E.J.; van der Hout, Annemarie H.; Vreeswijk, Maaike P.G.; Hoogerbrugge, Nicoline; Ausems, Margreet G.E.M.; van Doorn, Helena C.; Collée, J. Margriet; Olah, Edith; Diez, Orland; Blanco, Ignacio; Lazaro, Conxi; Brunet, Joan; Feliubadalo, Lidia; Cybulski, Cezary; Gronwald, Jacek; Durda, Katarzyna; Jaworska-Bieniek, Katarzyna; Sukiennicki, Grzegorz; Arason, Adalgeir; Chiquette, Jocelyne; Teixeira, Manuel R.; Olswold, Curtis; Couch, Fergus J.; Lindor, Noralane M.; Wang, Xianshu; Szabo, Csilla I.; Offit, Kenneth; Corines, Marina; Jacobs, Lauren; Robson, Mark E.; Zhang, Liying; Joseph, Vijai; Berger, Andreas; Singer, Christian F.; Rappaport, Christine; Kaulich, Daphne Geschwantler; Pfeiler, Georg; Tea, Muy-Kheng M.; Phelan, Catherine M.; Greene, Mark H.; Mai, Phuong L.; Rennert, Gad; Mulligan, Anna Marie; Glendon, Gord; Tchatchou, Sandrine; Andrulis, Irene L.; Toland, Amanda Ewart; Bojesen, Anders; Pedersen, Inge Sokilde; Thomassen, Mads; Jensen, Uffe Birk; Laitman, Yael; Rantala, Johanna; von Wachenfeldt, Anna; Ehrencrona, Hans; Askmalm, Marie Stenmark; Borg, Åke; Kuchenbaecker, Karoline B.; McGuffog, Lesley; Barrowdale, Daniel; Healey, Sue; Lee, Andrew; Pharoah, Paul D.P.; Chenevix-Trench, Georgia; Antoniou, Antonis C.; Friedman, Eitan

2014-01-01

Background BRCA1 and BRCA2 mutation carriers are at substantially increased risk for developing breast and ovarian cancer. The incomplete penetrance coupled with the variable age at diagnosis in carriers of the same mutation suggests the existence of genetic and non-genetic modifying factors. In this study we evaluated the putative role of variants in many candidate modifier genes. Methods Genotyping data from 15,252 BRCA1 and 8,211 BRCA2 mutation carriers, for known variants (n=3,248) located within or around 445 candidate genes, were available through the iCOGS custom-designed array. Breast and ovarian cancer association analysis was performed within a retrospective cohort approach. Results The observed p-values of association ranged between 0.005-1.000. None of the variants was significantly associated with breast or ovarian cancer risk in either BRCA1 or BRCA2 mutation carriers, after multiple testing adjustments. Conclusion There is little evidence that any of the evaluated candidate variants act as modifiers of breast and/or ovarian cancer risk in BRCA1 or BRCA2 mutation carriers. Impact Genome-wide association studies have been more successful at identifying genetic modifiers of BRCA1/2 penetrance than candidate gene studies. PMID:25336561

Candidate genetic modifiers for breast and ovarian cancer risk in BRCA1 and BRCA2 mutation carriers.

PubMed

Peterlongo, Paolo; Chang-Claude, Jenny; Moysich, Kirsten B; Rudolph, Anja; Schmutzler, Rita K; Simard, Jacques; Soucy, Penny; Eeles, Rosalind A; Easton, Douglas F; Hamann, Ute; Wilkening, Stefan; Chen, Bowang; Rookus, Matti A; Schmidt, Marjanka K; van der Baan, Frederieke H; Spurdle, Amanda B; Walker, Logan C; Lose, Felicity; Maia, Ana-Teresa; Montagna, Marco; Matricardi, Laura; Lubinski, Jan; Jakubowska, Anna; Gómez Garcia, Encarna B; Olopade, Olufunmilayo I; Nussbaum, Robert L; Nathanson, Katherine L; Domchek, Susan M; Rebbeck, Timothy R; Arun, Banu K; Karlan, Beth Y; Orsulic, Sandra; Lester, Jenny; Chung, Wendy K; Miron, Alex; Southey, Melissa C; Goldgar, David E; Buys, Saundra S; Janavicius, Ramunas; Dorfling, Cecilia M; van Rensburg, Elizabeth J; Ding, Yuan Chun; Neuhausen, Susan L; Hansen, Thomas V O; Gerdes, Anne-Marie; Ejlertsen, Bent; Jønson, Lars; Osorio, Ana; Martínez-Bouzas, Cristina; Benitez, Javier; Conway, Edye E; Blazer, Kathleen R; Weitzel, Jeffrey N; Manoukian, Siranoush; Peissel, Bernard; Zaffaroni, Daniela; Scuvera, Giulietta; Barile, Monica; Ficarazzi, Filomena; Mariette, Frederique; Fortuzzi, Stefano; Viel, Alessandra; Giannini, Giuseppe; Papi, Laura; Martayan, Aline; Tibiletti, Maria Grazia; Radice, Paolo; Vratimos, Athanassios; Fostira, Florentia; Garber, Judy E; Donaldson, Alan; Brewer, Carole; Foo, Claire; Evans, D Gareth R; Frost, Debra; Eccles, Diana; Brady, Angela; Cook, Jackie; Tischkowitz, Marc; Adlard, Julian; Barwell, Julian; Walker, Lisa; Izatt, Louise; Side, Lucy E; Kennedy, M John; Rogers, Mark T; Porteous, Mary E; Morrison, Patrick J; Platte, Radka; Davidson, Rosemarie; Hodgson, Shirley V; Ellis, Steve; Cole, Trevor; Godwin, Andrew K; Claes, Kathleen; Van Maerken, Tom; Meindl, Alfons; Gehrig, Andrea; Sutter, Christian; Engel, Christoph; Niederacher, Dieter; Steinemann, Doris; Plendl, Hansjoerg; Kast, Karin; Rhiem, Kerstin; Ditsch, Nina; Arnold, Norbert; Varon-Mateeva, Raymonda; Wappenschmidt, Barbara; Wang-Gohrke, Shan; Bressac-de Paillerets, Brigitte; Buecher, Bruno; Delnatte, Capucine; Houdayer, Claude; Stoppa-Lyonnet, Dominique; Damiola, Francesca; Coupier, Isabelle; Barjhoux, Laure; Venat-Bouvet, Laurence; Golmard, Lisa; Boutry-Kryza, Nadia; Sinilnikova, Olga M; Caron, Olivier; Pujol, Pascal; Mazoyer, Sylvie; Belotti, Muriel; Piedmonte, Marion; Friedlander, Michael L; Rodriguez, Gustavo C; Copeland, Larry J; de la Hoya, Miguel; Segura, Pedro Perez; Nevanlinna, Heli; Aittomäki, Kristiina; van Os, Theo A M; Meijers-Heijboer, Hanne E J; van der Hout, Annemarie H; Vreeswijk, Maaike P G; Hoogerbrugge, Nicoline; Ausems, Margreet G E M; van Doorn, Helena C; Collée, J Margriet; Olah, Edith; Diez, Orland; Blanco, Ignacio; Lazaro, Conxi; Brunet, Joan; Feliubadalo, Lidia; Cybulski, Cezary; Gronwald, Jacek; Durda, Katarzyna; Jaworska-Bieniek, Katarzyna; Sukiennicki, Grzegorz; Arason, Adalgeir; Chiquette, Jocelyne; Teixeira, Manuel R; Olswold, Curtis; Couch, Fergus J; Lindor, Noralane M; Wang, Xianshu; Szabo, Csilla I; Offit, Kenneth; Corines, Marina; Jacobs, Lauren; Robson, Mark E; Zhang, Liying; Joseph, Vijai; Berger, Andreas; Singer, Christian F; Rappaport, Christine; Kaulich, Daphne Geschwantler; Pfeiler, Georg; Tea, Muy-Kheng M; Phelan, Catherine M; Greene, Mark H; Mai, Phuong L; Rennert, Gad; Mulligan, Anna Marie; Glendon, Gord; Tchatchou, Sandrine; Andrulis, Irene L; Toland, Amanda Ewart; Bojesen, Anders; Pedersen, Inge Sokilde; Thomassen, Mads; Jensen, Uffe Birk; Laitman, Yael; Rantala, Johanna; von Wachenfeldt, Anna; Ehrencrona, Hans; Askmalm, Marie Stenmark; Borg, Åke; Kuchenbaecker, Karoline B; McGuffog, Lesley; Barrowdale, Daniel; Healey, Sue; Lee, Andrew; Pharoah, Paul D P; Chenevix-Trench, Georgia; Antoniou, Antonis C; Friedman, Eitan

2015-01-01

BRCA1 and BRCA2 mutation carriers are at substantially increased risk for developing breast and ovarian cancer. The incomplete penetrance coupled with the variable age at diagnosis in carriers of the same mutation suggests the existence of genetic and nongenetic modifying factors. In this study, we evaluated the putative role of variants in many candidate modifier genes. Genotyping data from 15,252 BRCA1 and 8,211 BRCA2 mutation carriers, for known variants (n = 3,248) located within or around 445 candidate genes, were available through the iCOGS custom-designed array. Breast and ovarian cancer association analysis was performed within a retrospective cohort approach. The observed P values of association ranged between 0.005 and 1.000. None of the variants was significantly associated with breast or ovarian cancer risk in either BRCA1 or BRCA2 mutation carriers, after multiple testing adjustments. There is little evidence that any of the evaluated candidate variants act as modifiers of breast and/or ovarian cancer risk in BRCA1 or BRCA2 mutation carriers. Genome-wide association studies have been more successful at identifying genetic modifiers of BRCA1/2 penetrance than candidate gene studies. ©2014 American Association for Cancer Research.

Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties

NASA Astrophysics Data System (ADS)

Cui, W.; Zhao, X. L.; An, Y. H.; Guo, D. Y.; Qing, X. Y.; Wu, Z. P.; Li, P. G.; Li, L. H.; Cui, C.; Tang, W. H.

2017-04-01

Conductive Ga2O3 thin films with an In2O3 buffer layer have been prepared on c-plane sapphire substrates using a laser molecular beam epitaxy technique. The effects of the In2O3 buffer layer on the structure and optical, electrical and surface state properties of the Ga2O3 films have been studied. The change in conductivity of the thin films is attributed to different thicknesses of the In2O3 buffer layer, which determine the concentration of charge carriers injected into the upper Ga2O3 layer from the interface of the bilayer thin films. In addition, the increase in flat band voltage shift and capacitance values as the In2O3 buffer layer thickens are attributed to the increase in surface state density, which also contributes to the rapid shrinkage of the optical band gap of the Ga2O3. With transparency to visible light, high n-type conduction and the ability to tune the optical band gap and surface state density, we propose that Ga2O3/In2O3 bilayer thin film is an ideal n-type semiconductor for fabrication of transparent power devices, solar cell electrodes and gas sensors.

Ultrafast Carrier dynamics of InxGa1-xN nanostructures grown directly on Si(111)

NASA Astrophysics Data System (ADS)

Kumar, Praveen; Devi, Pooja; Rodriguez⁠, P. E. D. S.; Kumar, Manish; Shivling, V. D.; Noetzel, Richard; Sharma, Chhavi; Sinha, R. K.; Kumar, Mahesh

2018-05-01

We show a flux dependence changes in structural, optical and electronic properties of InxGa1-xN nanostructures (NSs) namely nanocolumns (NCs), nanoflakes (NFs) and nanowall network (NWN) grown directly on Si(111) surface. Field emission scanning electron microscopy (FESEM) images were recorded to see morphological changes from NFs to NCs and NWNc etc, while high-resolution X-ray diffraction (HRXRD) ω-2θ scans were used to determine In incorporation. The maximum In incorporation was observed to be 20, 33 and 38% for the sharp transition from NFs to NCs and NWNs, respectively. The charge carrier dynamics of these grown NSs were probed using Ultrafast Femtosecond Transient Absorption Spectroscopy (UFTAS) with excitation at 350 nm pump wavelength. The UFTAS studies show the comparative charge carriers dynamics of the NWS, NCs and NFs. The charge carrier studies show a higher lifetime in NWNs as compare to NCs and NFs. Further, to examine electronic structure and level of degeneracy of these NSs, core-level and valence band spectra were analyzed by X-ray photoelectron spectroscopy (XPS), which manifest the upward band bending ranging from 0.2 eV to 0.4 eV.

Solubility and diffusivity of N{sub 2}O and CO{sub 2} in (diethanolamine + N-methyldiethanolamine + water) and in (diethanolamine + 2-amino-2-methyl-1-propanol + water)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, M.H.; Lee, W.C.

1996-05-01

Acid gases such as CO{sub 2} and H{sub 2}S are frequently removed from natural gas, synthetic natural gas, and other process gas streams by means of absorption into aqueous alkanol-amine solutions. The solubility and diffusivity of N{sub 2}O in (diethanolamine + N-methyldiethanolamine + water) and in (diethanolamine + 2-amino-2-methyl-1-propanol + water) were measured at (30, 35, and 40)C and at atmospheric pressure. Five (diethanolamine + N-methyldiethanolamine + water) and four (diethanolamine + 2-amino-2-methyl-1-propanol + water) systems were studied. The total amine mass percent in all cases was 30. A solubility apparatus was used to measure the solubility of N{sub 2}Omore » in amine solutions. The diffusivity was measured by a wetted wall column absorber. The N{sub 2}O analogy was used to estimate the solubility and diffusivity of CO{sub 2} in (diethanolamine + N-methyldiethanolamine + water) and in (diethanolamine + 2-amino-2-methyl-1-propanol + water).« less

Microbial Ecological Niche Partitioning Affects N2 gas Production in the Largest Marine Oxygen Minimum Zone

NASA Astrophysics Data System (ADS)

Fuchsman, C. A.; Penn, J. L.; Devol, A.; Palevsky, H. I.; Deutsch, C. A.; Keil, R.; Ward, B. B.; Rocap, G.

2016-02-01

Up to half of oceanic N2 production occurs in oxygen minimum zones (OMZs). In the Eastern Tropical North Pacific OMZ in April 2012, we measured a nine station coast to open ocean transect of N2 gas in the heart of the ETNP OMZ. Depth profiles of excess N2 gas had dual maxima located at the top of the OMZ and at 300m. An ecosystem biogeochemical model of the ETNP was also found to produce dual maxima at stations with a shallow OMZ. The model indicated that high N2 production rates caused the upper N2 maxima while long water residence time caused the deeper maxima. At a low productivity open ocean station where dual N2 maxima were observed, we obtained a depth profile of metagenomic sequences from both free living and >30 μm fractions to determine which N2 producing microbes were living in these three ecological niches. We use a phylogenetically-aware approach to identify metagenomic sequences by placing them on reference trees, which allows us to utilize them in a semi-quantitative manner. Overall, genes for denitrification (napA, nirS, nirK, qnor, nosZ) were enriched on particles while anammox was free-living. However, separation of genes into phylotypes indicated that the system is more complicated. For example, 4 out of 5 N2O reductase denitrifier phylotypes were actually free-living, while the fifth, most abundant phylotype was particle-attached. In the water column, denitrifier and anammox genes were spatially separated with depth with denitrifiers focused on the top section of the OMZ and with anammox becoming abundant slightly deeper and being more dominant at the deep N2 maxima. Interestingly, different phylotypes of denitrifiers have different depth profiles, implying individual adaptations and niches. The presence of measurable ammonia (>200 nM) at the top 20m of the OMZ along with the very low numbers of anammox bacteria is consistent with recent shoaling of the OMZ at the time of sampling. Thus the spatial separation of denitrifiers and anammox at the

N2O molecular tagging velocimetry

NASA Astrophysics Data System (ADS)

ElBaz, A. M.; Pitz, R. W.

2012-03-01

A new seeded velocity measurement technique, N2O molecular tagging velocimetry (MTV), is developed to measure velocity in wind tunnels by photochemically creating an NO tag line. Nitrous oxide "laughing gas" is seeded into the air flow. A 193 nm ArF excimer laser dissociates the N2O to O(1D) that subsequently reacts with N2O to form NO. O2 fluorescence induced by the ArF laser "writes" the original position of the NO line. After a time delay, the shifted NO line is "read" by a 226-nm laser sheet and the velocity is determined by time-of-flight. At standard atmospheric conditions with 4% N2O in air, ˜1000 ppm of NO is photochemically created in an air jet based on experiment and simulation. Chemical kinetic simulations predict 800-1200 ppm of NO for 190-750 K at 1 atm and 850-1000 ppm of NO for 0.25-1 atm at 190 K. Decreasing the gas pressure (or increasing the temperature) increases the NO ppm level. The presence of humid air has no significant effect on NO formation. The very short NO formation time (<10 ns) makes the N2O MTV method amenable to low- and high-speed air flow measurements. The N2O MTV technique is demonstrated in air jet to measure its velocity profile. The N2O MTV method should work in other gas flows as well (e.g., helium) since the NO tag line is created by chemical reaction of N2O with O(1D) from N2O photodissociation and thus does not depend on the bulk gas composition.

Segregation of chlorine in n-type tin monosulfide ceramics: Actual chlorine concentration for carrier-type conversion

NASA Astrophysics Data System (ADS)

Iguchi, Yuki; Sugiyama, Taiki; Inoue, Kazutoshi; Yanagi, Hiroshi

2018-05-01

Tin monosulfide (SnS) is an attractive material for photovoltaic cells because of its suitable band-gap energy, high absorption coefficient, and non-toxic and abundant constituent elements. The primary drawback of this material is the lack of n-type SnS. We recently demonstrated n-type SnS by doping with Cl. However, the Cl-doped n-type SnS bulk ceramics exhibited an odd behavior in which carrier-type conversion but not electron carrier concentration depended on the Cl concentration. In this study, the electron probe microanalysis (EPMA) elemental mapping of Cl-doped SnS revealed continuous homogeneous regions with a relatively low Cl concentration along with the islands of high Cl concentration in which Sn/S is far from unity. The difference between the Cl concentration in the homogeneous region (determined by EPMA) and the bulk Cl concentration (determined by wavelength-dispersive X-ray fluorescence spectroscopy) increased with the increasing Cl doping amount. The carrier concentration and the Hall coefficient clearly depended on the Cl concentration in the homogeneous region. Carrier-type conversion was observed at the Cl concentration of 0.26 at. % (in the homogeneous region).

A novel vortex tube-based N2-expander liquefaction process for enhancing the energy efficiency of natural gas liquefaction

NASA Astrophysics Data System (ADS)

Qyyum, Muhammad Abdul; Wei, Feng; Hussain, Arif; Ali, Wahid; Sehee, Oh; Lee, Moonyong

2017-11-01

This research work unfolds a simple, safe, and environment-friendly energy efficient novel vortex tube-based natural gas liquefaction process (LNG). A vortex tube was introduced to the popular N2-expander liquefaction process to enhance the liquefaction efficiency. The process structure and condition were modified and optimized to take a potential advantage of the vortex tube on the natural gas liquefaction cycle. Two commercial simulators ANSYS® and Aspen HYSYS® were used to investigate the application of vortex tube in the refrigeration cycle of LNG process. The Computational fluid dynamics (CFD) model was used to simulate the vortex tube with nitrogen (N2) as a working fluid. Subsequently, the results of the CFD model were embedded in the Aspen HYSYS® to validate the proposed LNG liquefaction process. The proposed natural gas liquefaction process was optimized using the knowledge-based optimization (KBO) approach. The overall energy consumption was chosen as an objective function for optimization. The performance of the proposed liquefaction process was compared with the conventional N2-expander liquefaction process. The vortex tube-based LNG process showed a significant improvement of energy efficiency by 20% in comparison with the conventional N2-expander liquefaction process. This high energy efficiency was mainly due to the isentropic expansion of the vortex tube. It turned out that the high energy efficiency of vortex tube-based process is totally dependent on the refrigerant cold fraction, operating conditions as well as refrigerant cycle configurations.

Photoacoustic Spectroscopy for the Quantification of N2O in the Off-Gas of Wastewater Treatment Plants.

PubMed

Thaler, Klemens M; Berger, Christoph; Leix, Carmen; Drewes, Jörg; Niessner, Reinhard; Haisch, Christoph

2017-03-21

Different configurations of photoacoustic (PA) setups for the online-measurement of gaseous N 2 O, employing semiconductor lasers at 2.9 and 4.5 μm, were developed and tested. Their performance was assessed with respect to the analysis of N 2 O emissions from wastewater treatment plants. For this purpose, the local N 2 O emissions of a wastewater treatment bioreactor was sampled by a dedicated mobile sampling device, and the total N 2 O emissions were analyzed in the gastight headspace of the bioreactor. We found that the use of a quantum-cascade laser emitting at about 4.53 μm, operated in a wavelength modulation mode, in combination with a conventional longitudinal PA cell yielded the highest sensitivity (<100 ppbv). However, we also observed a strong cross-sensitivity to humidity, which can be explained by increased V-T relaxation. This observation in combination with the limited dynamic range (max conc. ∼ 3000 ppmv) led us to the use of the less-sensitive but spectroscopically more robust 2.9 μm laser. A detection limit below 1 ppmv, a dynamic range of more than 4 orders of magnitude, no influence of humidity or any other substance relevant to the off-gas analysis, as well as a comparable low price of the laser source made it the ideal tool for N 2 O analyses of the off-gas of a wastewater treatment plant. Such a system was implemented successfully in a full-scale wastewater treatment plant. The results regarding the comparison of different PA setups can be transferred to other systems, and the optimum performance can be selected according to the specific demands.

Preparing safety data packages for experimenters using the Get Away Special (GAS) carrier system

NASA Technical Reports Server (NTRS)

Kosko, Jerome

1992-01-01

The implementation of NSTS 1700.7B and more forceful scruntiny of data packages by the Johnson Space Flight Center (JSC) lead to the development of a classification policy for GAS/CAP payloads. The purpose of this policy is to classify experiments using the carrier system so that they receive an appropriate level of JSC review (i.e., one or multiphase reviews). This policy is based on energy containment to show inherent payload safety. It impacts the approach to performing hazard analyses and the nature of the data package. This paper endeavors to explain the impact of this policy as well as the impact of recent JSC as well as Kennedy Space Flight Center (KSC) 'interpretations' of existing requirements. The GAS canister does adequately contain most experiments when flown in the sealed configuration (however this must be shown, not merely stated). This paper also includes data package preparation guidelines for those experiments that require an opening door which often present unique safety issues.

Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

NASA Astrophysics Data System (ADS)

Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

2016-03-01

The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

Highly photostable NV centre ensembles in CVD diamond produced by using N2O as the doping gas

NASA Astrophysics Data System (ADS)

Tallaire, A.; Mayer, L.; Brinza, O.; Pinault-Thaury, M. A.; Debuisschert, T.; Achard, J.

2017-10-01

High density Nitrogen-Vacancy (NV) centre ensembles incorporated in plasma assisted chemical vapour deposition (CVD) diamond are crucial to the development of more efficient sensing devices that use the properties of luminescent defects. Achieving high NV doping with N2 as the dopant gas source during diamond growth is, however, plagued by the formation of macroscopic and point defects that quench luminescence. Moreover, such NVs are found to exhibit poor photostability under high laser powers. Although this effect can be harnessed to locally and durably switch off NV luminescence for data storage, it is usually undesirable for most applications. In this work, the use of N2O as an alternative doping source is proposed. Much higher amounts of the doping gas can be added without significantly generating defects, which allows the incorporation of perfectly photostable and higher density NV ensembles. This effect is believed to be related to the lower dissociation energy of the N2O molecule together with the beneficial effect of the presence of a low and controlled amount of oxygen near the growing surface.

Stabilizing benzene-like planar N6 rings to form a single atomic honeycomb BeN3 sheet with high carrier mobility.

PubMed

Li, Xiaoyin; Zhang, Shunhong; Zhang, Cunzhi; Wang, Qian

2018-01-18

It is a longstanding quest to use the planar N 6 ring as a structural unit to build stable atomic sheets. However, unlike C 6 H 6 , the neutral N 6 ring is unstable due to the strong repulsion of the lone-pair of electrons. Using first-principles calculations and the global structure search method, we show that the N 6 unit can be stabilized by the linkage of Be atoms, forming a h-BeN 3 honeycomb monolayer, in which the geometry and the π-molecular orbitals of the N 6 rings are well kept. This sheet is not only energetically, dynamically and thermally stable, but also can withstand high temperatures up to 1000 K. Band structure calculation combined with a group theory analysis and a tight-binding model uncover that h-BeN 3 has a π-band dominated band structure with an indirect band gap of 1.67 eV. While it possesses a direct band gap of 2.07 eV at the Γ point lying in the photon energy region of visual light, its interband dipole transition is symmetrically allowed so that electrons can be excited by photons free of phonons. Based on deformation potential theory, a systematic study of the transport properties reveals that the h-BeN 3 sheet possesses a high carrier mobility of ∼10 3 cm 2 V -1 s -1 , superior to the extensively studied transition metal dichalcogenide monolayers. We further demonstrate that this sheet can be rolled up into either zigzag or armchair nanotubes. These nanotubes are also dynamically stable, and are all direct band gap semiconductors with carrier mobility comparable to that of their 2D counterparts, regardless of their chirality and diameter. The robust stability and novel electronic and transport properties of the h-BeN 3 sheet and its tubular derivatives endow them with great potential for applications in nanoelectronic devices.

Numerical Simulation and Industrial Experimental Research on the Coherent Jet with "CH4 + N2" Mixed Fuel Gas

NASA Astrophysics Data System (ADS)

Hu, Shaoyan; Zhu, Rong; Dong, Kai; Liu, Runzao

2018-06-01

Coherent jet technology is widely used in the electric arc furnace (EAF) steelmaking process to deliver more energy and momentum into the molten steel bath. Meanwhile, the characteristics of a coherent jet using pure CH4 as the fuel gas have been well investigated in previous studies. To reduce the consumption of CH4, coherent jet technology using "CH4 + N2" mixed fuel gas instead of pure CH4 was proposed and studied in detail by numerical simulation in the present work. The Eddy Dissipation Concept model, which has detailed chemical kinetic mechanisms, was adopted to model the fuel gas combustion reactions. Experimental measurements were carried out to validate the accuracy of the computational model. The present study shows that the jet characteristics of the main oxygen improve along with the increase of the CH4 ratio in fuel gas and with the increase of the flow rate of fuel gas. When the CH4 ratio in the fuel gas is 25 pct, the fuel gas flow rate only has a limited influence on the jet characteristics, unlike the rest of the fuel gas compositions, because a high N2 proportion deteriorates the combustion performance and leads to severe incomplete combustion. Moreover, a false potential core phenomenon was observed and explained in the present study. Based on the average values, the jet length of a coherent jet with 75 pct CH4 can achieve 89.8 pct of that with 100 pct CH4. Finally, an industrial experiment was carried out on a commercial 100t EAF using coherent jet with 75 pct CH4, showing that the average CH4 consumption was reduced from 3.84 to 3.05 Nm3 t-1 under the premise of no obvious changes in the other production indexes.

Super-diffusion of excited carriers in semiconductors

PubMed Central

Najafi, Ebrahim; Ivanov, Vsevolod; Zewail, Ahmed; Bernardi, Marco

2017-01-01

The ultrafast spatial and temporal dynamics of excited carriers are important to understanding the response of materials to laser pulses. Here we use scanning ultrafast electron microscopy to image the dynamics of electrons and holes in silicon after excitation with a short laser pulse. We find that the carriers exhibit a diffusive dynamics at times shorter than 200 ps, with a transient diffusivity up to 1,000 times higher than the room temperature value, D0≈30 cm2s−1. The diffusivity then decreases rapidly, reaching a value of D0 roughly 500 ps after the excitation pulse. We attribute the transient super-diffusive behaviour to the rapid expansion of the excited carrier gas, which equilibrates with the environment in 100−150 ps. Numerical solution of the diffusion equation, as well as ab initio calculations, support our interpretation. Our findings provide new insight into the ultrafast spatial dynamics of excited carriers in materials. PMID:28492283

The structure, stability, and infrared spectrum of B 2N, B 2N +, B 2N -, BO, B 2O and B 2N 2.

NASA Astrophysics Data System (ADS)

Martin, J. M. L.; François, J. P.; Gijbels, R.

1992-05-01

The structure, infrared spectrum, and heat of formation of B 2N, B 2N -, BO, and B 2O have been studied ab initio. B 2N is very stable; B 2O even more so. B 2N, B 2N -, B 2O, and probably B 2N + have symmetric linear ground-state structures; for B 2O, an asymmetric linear structure lies about 12 kcal/mol above the ground state. B 2N +, B 2N - and B 2O have intense asymmetric stretching frequencies, predicted near 870, 1590 and 1400 cm -1, respectively. Our predicted harmonic frequencies and isotopic shifts for B 2O confirm the recent experimental identification by Andrews and Burkholder. Absorptions at 1889.5 and 1998.5 cm -1 in noble-gas trapped boron nitride vapor belong the BNB and BNBN ( 3Π), respectively; a tentative assignment of 882.5 cm -1 to BNB + is proposed. Total atomization energies Σ De (Σ D0) are computed (accuracy ±2 kcal/mol) as: BO 193.1 (190.4), B 2O 292.5 (288.7), B 2N 225.0 (250.3) kcal/mol. The ionization potential and electron affinity of B 2N are predicted to be 8.62±0.1 and 3.34±0.1 eV. The MP4-level additivity approximations involved in G1 theory results in errors on the order of 1 kcal/mol in the Σ De values.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

PubMed Central

2012-01-01

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm. PMID:23134721

Dissociation of protonated N-(3-phenyl-2H-chromen-2-ylidene)-benzenesulfonamide in the gas phase: cyclization via sulfonyl cation transfer.

PubMed

Wang, Shanshan; Dong, Cheng; Yu, Lian; Guo, Cheng; Jiang, Kezhi

2016-01-15

In the tandem mass spectrometry of protonated N-(3-phenyl-2H-chromen-2-ylidene)benzenesulfonamides, the precursor ions have been observed to undergo gas-phase dissociation via two competing channels: (a) the predominant channel involves migration of the sulfonyl cation to the phenyl C atom and the subsequent loss of benzenesulfinic acid along with cyclization reaction, and (b) the minor one involves dissociation of the precursor ion to give an ion/neutral complex of [sulfonyl cation/imine], followed by decomposition to afford sulfonyl cation or the INC-mediated electron transfer to give an imine radical cation. The proposed reaction channels have been supported by theoretical calculations and D-labeling experiments. The gas-phase cyclization reaction originating from the N- to C-sulfonyl cation transfer has been first reported to the best of our knowledge. For the substituted sulfonamides, the presence of electron-donating groups (R(2) -) at the C-ring effectively facilitates the reaction channel of cyclization reaction, whereas that of electron-withdrawing groups inhibits this pathway. Copyright © 2015 John Wiley & Sons, Ltd.

A low temperature investigation of the gas-phase N(2D) + NO reaction. Towards a viable source of N(2D) atoms for kinetic studies in astrochemistry.

PubMed

Nuñez-Reyes, Dianailys; Hickson, Kevin M

2018-06-18

The gas-phase reaction of metastable atomic nitrogen N(2D) with nitric oxide has been investigated over the 296-50 K temperature range using a supersonic flow reactor. As N(2D) could not be produced photolytically in the present work, these excited state atoms were generated instead through the C(3P) + NO → N(2D) + CO reaction while C(3P) atoms were created in situ by the 266 nm pulsed laser photolysis of CBr4 precursor molecules. The kinetics of N(2D) atoms were followed on-resonance by vacuum ultraviolet laser induced fluorescence at 116.7 nm. The measured rate constants for the N(2D) + NO reaction are in excellent agreement with most of the earlier work at room temperature and represent the only available kinetic data for this process below 296 K. The rate constants are seen to increase slightly as the temperature falls to 100 K with a more substantial increase at even lower temperature; a finding which is not reproduced by theoretical work. The prospects for using this chemical source of N(2D) atoms in future studies of a wide range of N(2D) atom reactions are discussed.

Reduction of the Powerful Greenhouse Gas N2O in the South-Eastern Indian Ocean.

PubMed

Raes, Eric J; Bodrossy, Levente; Van de Kamp, Jodie; Holmes, Bronwyn; Hardman-Mountford, Nick; Thompson, Peter A; McInnes, Allison S; Waite, Anya M

2016-01-01

Nitrous oxide (N2O) is a powerful greenhouse gas and a key catalyst of stratospheric ozone depletion. Yet, little data exist about the sink and source terms of the production and reduction of N2O outside the well-known oxygen minimum zones (OMZ). Here we show the presence of functional marker genes for the reduction of N2O in the last step of the denitrification process (nitrous oxide reductase genes; nosZ) in oxygenated surface waters (180-250 O2 μmol.kg(-1)) in the south-eastern Indian Ocean. Overall copy numbers indicated that nosZ genes represented a significant proportion of the microbial community, which is unexpected in these oxygenated waters. Our data show strong temperature sensitivity for nosZ genes and reaction rates along a vast latitudinal gradient (32°S-12°S). These data suggest a large N2O sink in the warmer Tropical waters of the south-eastern Indian Ocean. Clone sequencing from PCR products revealed that most denitrification genes belonged to Rhodobacteraceae. Our work highlights the need to investigate the feedback and tight linkages between nitrification and denitrification (both sources of N2O, but the latter also a source of bioavailable N losses) in the understudied yet strategic Indian Ocean and other oligotrophic systems.

49 CFR 397.2 - Compliance with Federal motor carrier safety regulations.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 5 2010-10-01 2010-10-01 false Compliance with Federal motor carrier safety...) FEDERAL MOTOR CARRIER SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION FEDERAL MOTOR CARRIER SAFETY REGULATIONS TRANSPORTATION OF HAZARDOUS MATERIALS; DRIVING AND PARKING RULES General § 397.2 Compliance with...

N2 Gas Flushing Alleviates the Loss of Bacterial Diversity and Inhibits Psychrotrophic Pseudomonas during the Cold Storage of Bovine Raw Milk.

PubMed

Gschwendtner, Silvia; Alatossava, Tapani; Kublik, Susanne; Fuka, Mirna Mrkonjić; Schloter, Michael; Munsch-Alatossava, Patricia

2016-01-01

The quality and safety of raw milk still remains a worldwide challenge. Culture-dependent methods indicated that the continuous N2 gas-flushing of raw milk reduced the bacterial growth during cold storage by up to four orders of magnitude, compared to cold storage alone. This study investigated the influence of N2 gas-flushing on bacterial diversity in bovine raw-milk samples, that were either cold stored at 6°C or additionally flushed with pure N2 for up to one week. Next-generation sequencing (NGS) of the V1-V2 hypervariable regions of 16S rRNA genes, derived from amplified cDNA, which was obtained from RNA directly isolated from raw-milk samples, was performed. The reads, which were clustered into 2448 operational taxonomic units (OTUs), were phylogenetically classified. Our data revealed a drastic reduction in the diversity of OTUs in raw milk during cold storage at 6°C at 97% similarity level; but, the N2-flushing treatment alleviated this reduction and substantially limited the loss of bacterial diversity during the same cold-storage period. Compared to cold-stored milk, the initial raw-milk samples contained less Proteobacteria (mainly Pseudomonadaceae, Moraxellaceae and Enterobacteriaceae) but more Firmicutes (mainly Ruminococcaceaea, Lachnospiraceae and Oscillospiraceaea) and Bacteroidetes (mainly Bacteroidales). Significant differences between cold-stored and additionally N2-flushed milk were mainly related to higher levels of Pseudomononadaceae (including the genera Pseudomonas and Acinetobacter) in cold-stored milk samples; furthermore, rare taxa were better preserved by the N2 gas flushing compared to the cold storage alone. No major changes in bacterial composition with time were found regarding the distribution of the major 9 OTUs, that dominated the Pseudomonas genus in N2-flushed or non-flushed milk samples, other than an intriguing predominance of bacteria related to P. veronii. Overall, this study established that neither bacteria causing milk

N2 Gas Flushing Alleviates the Loss of Bacterial Diversity and Inhibits Psychrotrophic Pseudomonas during the Cold Storage of Bovine Raw Milk

PubMed Central

Kublik, Susanne; Fuka, Mirna Mrkonjić; Schloter, Michael; Munsch-Alatossava, Patricia

2016-01-01

The quality and safety of raw milk still remains a worldwide challenge. Culture-dependent methods indicated that the continuous N2 gas-flushing of raw milk reduced the bacterial growth during cold storage by up to four orders of magnitude, compared to cold storage alone. This study investigated the influence of N2 gas-flushing on bacterial diversity in bovine raw-milk samples, that were either cold stored at 6°C or additionally flushed with pure N2 for up to one week. Next-generation sequencing (NGS) of the V1-V2 hypervariable regions of 16S rRNA genes, derived from amplified cDNA, which was obtained from RNA directly isolated from raw-milk samples, was performed. The reads, which were clustered into 2448 operational taxonomic units (OTUs), were phylogenetically classified. Our data revealed a drastic reduction in the diversity of OTUs in raw milk during cold storage at 6°C at 97% similarity level; but, the N2-flushing treatment alleviated this reduction and substantially limited the loss of bacterial diversity during the same cold-storage period. Compared to cold-stored milk, the initial raw-milk samples contained less Proteobacteria (mainly Pseudomonadaceae, Moraxellaceae and Enterobacteriaceae) but more Firmicutes (mainly Ruminococcaceaea, Lachnospiraceae and Oscillospiraceaea) and Bacteroidetes (mainly Bacteroidales). Significant differences between cold-stored and additionally N2-flushed milk were mainly related to higher levels of Pseudomononadaceae (including the genera Pseudomonas and Acinetobacter) in cold-stored milk samples; furthermore, rare taxa were better preserved by the N2 gas flushing compared to the cold storage alone. No major changes in bacterial composition with time were found regarding the distribution of the major 9 OTUs, that dominated the Pseudomonas genus in N2-flushed or non-flushed milk samples, other than an intriguing predominance of bacteria related to P. veronii. Overall, this study established that neither bacteria causing milk

Gas-liquid separator and method of operation

DOEpatents

Soloveichik, Grigorii Lev [Latham, NY; Whitt, David Brandon [Albany, NY

2009-07-14

A system for gas-liquid separation in electrolysis processes is provided. The system includes a first compartment having a liquid carrier including a first gas therein and a second compartment having the liquid carrier including a second gas therein. The system also includes a gas-liquid separator fluidically coupled to the first and second compartments for separating the liquid carrier from the first and second gases.

Impacts of Carrier Transport and Deep Level Defects on Delayed Cathodoluminescence in Droop-Mitigating InGaN/GaN LEDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Zhibo; Singh, Akshay; Chesin, Jordan

Prevalent droop mitigation strategies in InGaN-based LEDs require structural and/or compositional changes in the active region but are accompanied by a detrimental reduction in external quantum efficiency (EQE) due to increased Shockley-Read-Hall recombination. Understanding the optoelectronic impacts of structural modifications in InGaN/GaN quantum wells (QW) remains critical for emerging high-power LEDs. In this work, we use a combination of electron microscopy tools along with standard electrical characterization to investigate a wide range of low-droop InGaN/GaN QW designs. We find that chip-scale EQE is uncorrelated with extended well-width fluctuations observed in scanning transmission electron microscopy. Further, we observe delayed cathodoluminescence (CL)more » response from designs in which calculated band profiles suggest facile carrier escape from individual QWs. Samples with the slowest CL responses also exhibit the lowest EQEs and highest QW defect densities in deep level optical spectroscopy. We propose a model in which the electron beam (i) passivates deep level defect states and (ii) drives charge carrier accumulation and subsequent reduction of the built-in field across the multi-QW active region, resulting in delayed radiative recombination. Finally, we correlate CL rise dynamics with capacitance-voltage measurements and show that certain early-time components of the CL dynamics reflect the open circuit carrier population within one or more QWs.« less

Carrier concentration tuning in thermoelectric thiospinel Cu2CoTi3S8 by oxidative extraction of copper

NASA Astrophysics Data System (ADS)

Hashikuni, Katsuaki; Suekuni, Koichiro; Watanabe, Kosuke; Bouyrie, Yohan; Ohta, Michihiro; Ohtaki, Michitaka; Takabatake, Toshiro

2018-03-01

We report a method for carrier concentration tuning in the thermoelectric thiospinel Cu2CoTi3S8, which exhibits an n-type metallic character and a high power factor. An oxidative Cu extraction treatment produced Cu defects, resulting in Cu2-xCoTi3S8 up to x = 0.62. The electron carrier concentration was effectively reduced by this treatment, leading to the decrease in power factor, whereas the electronic contribution to the thermal conductivity was suppressed. As a result, the dimensionless figure of merit ZT remained unchanged as 0.2 at 670 K in the whole range of x ≤ 0.62. The oxidative Cu extraction described in this paper offers an opportunity to tune the electron carrier concentration for Cu-containing thermoelectric materials.

Thermal and Evolved Gas Analysis of Hydromagnesite and Nesquehonite: Implications for Remote Thermal Analysis on Mars

NASA Technical Reports Server (NTRS)

Lauer, H. V., Jr.; Ming, D. W.; Golden, D. C.; Lin, I.-C.; Boynton, W. V.

2000-01-01

Volatile-bearing minerals (e.g., Fe-oxyhydroxides, phyllosilicates, carbonates, and sulfates) may be important phases on the surface of Mars. In order to characterize these potential phases the Thermal Evolved-Gas Analyzer (TEGA), which was onboard the Mars Polar Lander, was to have performed differential scanning calorimetry (DSC) and evolved-gas analysis of soil samples collected from the surface. The sample chamber in TEGA operates at about 100 mbar (approximately 76 torr) with a N2, carrier gas flow of 0.4 seem. Essentially, no information exists on the effects of reduced pressure on the thermal properties of volatile-bearing minerals. In support of TEGA, we have constructed a laboratory analog for TEGA from commercial instrumentation. We connected together a commercial differential scanning calorimeter, a quadruple mass spectrometer, a vacuum pump, digital pressure gauge, electronic mass flow meter, gas "K" bottles, gas dryers, and high and low pressure regulators using a collection of shut off and needle valves. Our arrangement allows us to vary and control the pressure and carrier gas flow rate inside the calorimeter oven chamber.

Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs 0.91Sb 0.09 alloy nBn photodetectors

DOE PAGES

Olson, B. V.; Kim, J. K.; Kadlec, E. A.; ...

2015-11-03

Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs 0.91Sb 0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F 1F 2|=0.292. Moreover, the measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. As a result, excellent agreement is found between the two, highlighting the important relationship betweenmore » lifetimes and diffusion currents in nBn photodetectors.« less

41 CFR 109-40.103-2 - Disqualification and suspension of carriers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... suspension of carriers. 109-40.103-2 Section 109-40.103-2 Public Contracts and Property Management Federal... AVIATION, TRANSPORTATION, AND MOTOR VEHICLES 40-TRANSPORTATION AND TRAFFIC MANAGEMENT 40.1-General Provision § 109-40.103-2 Disqualification and suspension of carriers. Disqualification and suspension are...

Use of a bilayer lattice-matched AlInGaN barrier for improving the channel carrier confinement of enhancement-mode AlInGaN/GaN hetero-structure field-effect transistors

NASA Astrophysics Data System (ADS)

Rahbardar Mojaver, Hassan; Gosselin, Jean-Lou; Valizadeh, Pouya

2017-06-01

A quaternary lattice-matched layer structure based on employing a bilayer barrier for improving the carrier confinement in the channel of enhancement-mode metal-face c-plane wurtzite AlInGaN/GaN hetero-structure field effect transistors (HFETs) is for the first time proposed. Using the commercial self-consistent Poisson-Schrödinger solver Nextnano, electronic properties of the proposed hetero-structure, including the sheet charge density and carrier confinement on the GaN side of the hetero-interface, are evaluated. Based on these evaluations, it is shown that while the proposed layer structure substantially improves the carrier confinement in the GaN channel layer, it also upholds the merits of employing a lattice-matched barrier towards achieving an enhancement-mode operation (i.e., in the absence of the piezoelectric effect). According to these simulations, in terms of maintaining the required positive threshold-voltage for the enhancement-mode operation, it is also shown that the proposed layer structure substantially outperforms the quaternary AlInGaN/GaN HFETs employing a thin AlN spacer layer.

Measurements and modeling of charge carrier lifetime in compressed xenon

NASA Astrophysics Data System (ADS)

Pudov, A. O.; Abyzov, A. S.; Sokolov, S. A.; Davydov, L. N.; Rybka, A. V.; Kutny, V. E.; Melnikov, S. I.; Kholomyeyev, G. A.; Leonov, S. A.; Turchin, A. A.

2018-06-01

Gamma-spectrometers based on high-pressure xenon gas (HPXe) are proving themselves as a great potential alternative to the spectrometers based on high-purity germanium crystals and scintillators. The working medium for the high-resolution HPXe detectors, that is, xenon gas compressed up to pressure ∼50 bar and sometimes doped with hydrogen, methane or others gases, needs to be of very high purity. The gas purity level can be determined by direct measurements or, alternatively, its usability in gamma-spectrometers can be evaluated indirectly through the charge carrier (electron) lifetime measurements. Different approaches and specific setups have been used for the lifetime determination, most of those methods involve the measurement and analyses of individual pulses from ionizing particles registered in an ionization chamber filled with Xe. In the present paper, we report on the HPXe electron lifetime study carried out by using measurements in a cylindrical ionization chamber and the respective analytical charge transport model. Our results support the possibility of carrier lifetime determination in the cylindrical configuration. In addition, the voltage regimes for the use of the chamber in the spectroscopic mode were determined. The measurements were conducted in a two-electrode configuration for a range of pressure values (5 to 50 bar) for the Xe+0.25%H2 gas mixture of ∼6N purity. It is shown that in gases with relatively high values of the electron drift velocity and the electron lifetime, for example low-density gases, the charge collection time measurements can give significantly underestimated lifetime assessment. On the other hand, for the low drift velocity gases, they give much more accurate results. With the use of the analytical model, the electron lifetime was determined more precisely.

First observation of RDEC for gas (N2) targets with F9+

NASA Astrophysics Data System (ADS)

Kumara, P. N. S.; La Mantia, D. S.; Simon, A.; Kayani, A.; Tanis, J. A.

2017-10-01

Radiative double electron capture (RDEC) is a fundamental atomic process predicted to occur in ion-atom collisions. Several attempts were made to show experimental evidence for RDEC after it was introduced theoretically in 1987. The first successful measurements were done for O8+ ions colliding with a thin carbon foil in 2010, followed by measurements for F9+ projectiles incident on carbon. The works reported here are the first observations giving preliminary results for RDEC in collisions of F9+ projectiles with gas (N2) targets. X-rays were observed in the region of interest and an estimation of RDEC cross section was calculated. These cross sections are compared with recent theoretical calculations.

Analysis of the abnormal voltage-current behaviors on localized carriers of InGaN/GaN multiple quantum well from electron blocking layer

NASA Astrophysics Data System (ADS)

Nam, Giwoong; Kim, Byunggu; Leem, Jae-Young; Lee, Dong-Yul; Kim, Jong Su; Kim, Jin Soo

2013-11-01

The effect of an electron blocking layer (EBL) on the V — I curves for GaN/InGaN multiple quantum wells is investigated. For the first time, we found that the curves intersected at 3.012 V, and we investigated the reason for the intersection. The forward voltage in LEDs with a p-AlGaN EBL is larger than it is without the p-AlGaN EBL at low injection currents because the Mg-doping efficiency for the p-GaN layer is higher than that for the p-AlGaN layer. However, the forward voltage in LEDs with a p-AlGaN EBL is smaller than it is without the p-AlGaN EBL at high injection currents because the carriers overflow from the active layer when the injection current increases in LEDs without a p-AlGaN EBL, in case of LEDs with a p-AlGaN EBL, the carriers are blocked by the EBL.

Overlap corrections for emissivity calculations of H2O-CO2-CO-N2 mixtures

NASA Astrophysics Data System (ADS)

Alberti, Michael; Weber, Roman; Mancini, Marco

2018-01-01

Calculations of total gas emissivities of gas mixtures containing several radiatively active species require corrections for band overlapping. In this paper, we generate such overlap correction charts for H2O-CO2-N2, H2O-CO-N2, and CO2-CO-N2 mixtures. These charts are applicable in the 0.1-40 bar total pressure range and in the 500 K-2500 K temperature range. For H2O-CO2-N2 mixtures, differences between our charts and Hottel's graphs as well as models of Leckner and Modak are highlighted and analyzed.

Solubility and diffusivity of N{sub 2}O and CO{sub 2} in (monoethanolamine + N-methyldiethanolamine + water) and in (monoethanolamine + 2-amino-2-methyl-1-propanol + water)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, M.H.; Lai, M.D.

1995-03-01

Solutions of amines are frequently used in gas-treating processes to remove acid gases, such as CO{sub 2} and H{sub 2}S, from gas streams in the natural gas and synthetic ammonia industries and petroleum chemical plants. The solubility and diffusivity of N{sub 2}O in (monoethanolamine + N-methyldiethanolamine + water) and in (monoethanolamine + 2-amino-2-methyl-l-propanol + water) were measured at 30, 35, and 40 C and at atmospheric pressure. Six (monoethanolamine + N-methyldiethanolamine + water) and five (monoethanolamine + 2-amino-2-methyl-l-propanol + water) systems were studied. The total amine mass percent in all cases was 30. The solubilities were measured by a solubilitymore » apparatus similar to that of Haimour and Sandall (1984). A wetted wall column absorber was used to obtain the diffusivity of N{sub 2}O in amines. The N{sub 2}O solubilities in amine solutions have been correlated on the basis of the excess Henry constant correlation of Wang et al. (1992). The N{sub 2}O analogy was used to estimate the solubility and diffusivity of CO{sub 2} in (monoethanolamine + N-methyldiethanolamine + water) and in (monoethanolamine + 2-amino-2-methyl-l-propanol + water).« less

Double PALB2 and BRCA1/BRCA2 mutation carriers are rare in breast cancer and breast-ovarian cancer syndrome families from the French Canadian founder population.

PubMed

Ancot, Frédéric; Arcand, Suzanna L; Mes-Masson, Anne-Marie; Provencher, Diane M; Tonin, Patricia N

2015-06-01

French Canadian families with breast cancer and breast-ovarian cancer syndrome harbor specific BRCA1, BRCA2 and PALB2 germline mutations, which have been attributed to common founders. Mutations in these genes confer an increased risk to breast and ovarian cancers, and have been identified to play a role in and directly interact with the common homologous recombination DNA repair pathways. Our previous study described the case of a female diagnosed with breast cancer at 45 years old, who harbored the PALB2:c.2323C>T [p.Q775X] and BRCA2:c.9004G>A [p.E3002K] germline mutations, which have been found to recur in the French Canadian cancer families. As the frequency of double heterozygous carriers of breast-ovarian cancer susceptibility alleles is unknown, and due to the possibility that there may be implications for genetic counseling and management for these carriers, the present study investigated the co-occurrence of BRCA1/BRCA2 and PALB2 mutations in the French Canadian cancer families. The PALB2:c.2323C>T [p.Q775X] mutation, which is the only PALB2 mutation to have been identified in French Canadian cancer families, was screened in 214 breast cancer cases and 22 breast-ovarian cancer cases from 114 BRCA1/BRCA2 mutation-positive French Canadian breast cancer (n=61) and breast-ovarian cancer (n=53) families using a tailored polymerase chain reaction-based TaqMan® SNP Genotyping Assay. No additional PALB2:c.2323C>T [p.Q775X] mutation carriers were identified among the BRCA1/BRCA2 mutation carriers. The results suggest that carriers of the PALB2:c.2323C>T [p.Q775X] mutation rarely co-occur in French Canadian breast cancer and breast-ovarian cancer families harboring BRCA1 or BRCA2 mutations.

Investigation of reactions in a fluidized bed reactor during chemical looping combustion of coal/steam with copper oxide-iron oxide-alumina oxygen carrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siriwardane, Ranjani; Benincosa, William; Riley, Jarrett

This paper presents data on conversion of two different coals with a chemical looping oxygen carrier, CuO-Fe 2O 3-alumina, and over a range of conditions including steam and various levels of reduction of the oxygen carrier. Reactions of coal/steam/CuO-Fe 2O 3-alumina oxygen carrier and coal/steam/partially reduced CuO-Fe 2O 3-alumina oxygen carrier were investigated with Wyodak coal and Illinois #6 coal in a fluidized bed reactor. Temperature programmed reaction studies indicated that the oxygen carrier enhanced the steam gasification/combustion rates of both coals. Rates of gasification/combustion were higher with Wyodak coal (sub bituminous) than that with Illinois #6 coal (bituminous). Inmore » addition to the increase in reaction rates, the total moles of carbon that were gasified and combusted from coal/steam increased in the presence of the oxygen carrier. The reduced oxygen carrier promoted the water-gas shift reaction when reacted with synthesis gas in the presence of steam, but the reverse water gas shift reaction was observed when steam was not present. The partially reduced oxygen carrier enhanced the production of H 2 from coal/steam, which was different from the observations with un-reduced oxygen carrier. Water splitting reaction to produce H 2 was also observed with the reduced oxygen carrier. CuO-Fe 2O 3-alumina reacted with coal during the temperature ramp to 850 °C even in the absence of steam due to the chemical-looping oxygen uncoupling (CLOU) reaction. Here, the fourier transform infra-red (FTIR) analysis indicated the presence of volatile aromatics during the temperature ramp and these may have also contributed to the reactions with the oxygen carrier in the absence of steam. Increasing steam concentration had a negative effect on the CLOU reaction.« less

Investigation of reactions in a fluidized bed reactor during chemical looping combustion of coal/steam with copper oxide-iron oxide-alumina oxygen carrier

DOE PAGES

Siriwardane, Ranjani; Benincosa, William; Riley, Jarrett; ...

2016-10-06

This paper presents data on conversion of two different coals with a chemical looping oxygen carrier, CuO-Fe 2O 3-alumina, and over a range of conditions including steam and various levels of reduction of the oxygen carrier. Reactions of coal/steam/CuO-Fe 2O 3-alumina oxygen carrier and coal/steam/partially reduced CuO-Fe 2O 3-alumina oxygen carrier were investigated with Wyodak coal and Illinois #6 coal in a fluidized bed reactor. Temperature programmed reaction studies indicated that the oxygen carrier enhanced the steam gasification/combustion rates of both coals. Rates of gasification/combustion were higher with Wyodak coal (sub bituminous) than that with Illinois #6 coal (bituminous). Inmore » addition to the increase in reaction rates, the total moles of carbon that were gasified and combusted from coal/steam increased in the presence of the oxygen carrier. The reduced oxygen carrier promoted the water-gas shift reaction when reacted with synthesis gas in the presence of steam, but the reverse water gas shift reaction was observed when steam was not present. The partially reduced oxygen carrier enhanced the production of H 2 from coal/steam, which was different from the observations with un-reduced oxygen carrier. Water splitting reaction to produce H 2 was also observed with the reduced oxygen carrier. CuO-Fe 2O 3-alumina reacted with coal during the temperature ramp to 850 °C even in the absence of steam due to the chemical-looping oxygen uncoupling (CLOU) reaction. Here, the fourier transform infra-red (FTIR) analysis indicated the presence of volatile aromatics during the temperature ramp and these may have also contributed to the reactions with the oxygen carrier in the absence of steam. Increasing steam concentration had a negative effect on the CLOU reaction.« less

Syngas production by chemical-looping gasification of wheat straw with Fe-based oxygen carrier.

PubMed

Hu, Jianjun; Li, Chong; Guo, Qianhui; Dang, Jiatao; Zhang, Quanguo; Lee, Duu-Jong; Yang, Yunlong

2018-05-03

The iron-based oxygen carriers (OC's), Fe 2 O 3 /support (Al 2 O 3 , TiO 2 , SiO 2 and ZrO 2 ), for chemical looping gasification of wheat straw were prepared using impregnation method. The surface morphology, crystal structure, carbon deposition potential, lattice oxygen activity and selectivity of the yielded OCs were examined. The Fe 2 O 3 /Al 2 O 3 OCs at 60% loading has the highest H 2 yield, H 2 /CO ratio, gas yield, and carbon conversion amongst the tested OC's. Parametric studies revealed that an optimal loading Fe 2 O 3 of 60%, steam-to-biomass ratio of 0.8 and oxygen carrier-to-biomass ratio of 1.0 led to the maximum H 2 /CO ratio, gas yield, H 2  + CO ratio, and carbon conversion from the gasified wheat straw. High temperature, up to 950 °C, enhanced the gasification performance. A kinetic network interpreted the noted experimental results. The lattice oxygen provided by the prepared Fe 2 O 3 /Al 2 O 3 oxygen carriers promotes chemical looping gasification efficiencies from wheat straw. Copyright © 2018 Elsevier Ltd. All rights reserved.

Free energy study of H2O, N2O5, SO2, and O3 gas sorption by water droplets/slabs

NASA Astrophysics Data System (ADS)

Li, Wentao; Pak, Chi Yuen; Tse, Ying-Lung Steve

2018-04-01

Understanding gas sorption by water in the atmosphere is an active research area because the gases can significantly alter the radiation and chemical properties of the atmosphere. We attempt to elucidate the molecular details of the gas sorption of water and three common atmospheric gases (N2O5, SO2, and O3) by water droplets/slabs in molecular dynamics simulations. The system size effects are investigated, and we show that the calculated solvation free energy decreases linearly as a function of the reciprocal of the number of water molecules from 1/215 to 1/1000 in both the slab and the droplet systems. By analyzing the infinitely large system size limit by extrapolation, we find that all our droplet results are more accurate than the slab results when compared to the experimental values. We also show how the choice of restraints in umbrella sampling can affect the sampling efficiency for the droplet systems. The free energy changes were decomposed into the energetic ΔU and entropic -TΔS contributions to reveal the molecular details of the gas sorption processes. By further decomposing ΔU into Lennard-Jones and Coulombic interactions, we observe that the ΔU trends are primarily determined by local effects due to the size of the gas molecule, charge distribution, and solvation structure around the gas molecule. Moreover, we find that there is a strong correlation between the change in the entropic contribution and the mean residence time of water, which is spatially nonlocal and related to the mobility of water.

Carrier transport mechanisms of phosphorescent organic light-emitting devices fabricated utilizing a N,N'-dicarbazolyl-3,5-benzene: 1,3,5-tri(phenyl-2-benzimidazole)-benzene mixed host emitting layer.

PubMed

Choo, Dong Chul; Bang, Hyun Sung; Kim, Tae Whan; Seo, Ji Hyun; Kim, Young Kwan

2012-02-01

The electrical and the optical properties of phosphorescent organic light-emitting devices (PHOLEDs) fabricated utilizing a mixed host emitting layer (EML) consisting of N,N'-dicarbazolyl-3,5-benzene (mCP) and 1,3,5-tri(phenyl-2-benzimidazole)-benzene (TPBi) were investigated to clarify the carrier transport mechanisms of PHOLEDs. While the operating voltage of the PHOLEDs with a mixed host EML significantly decreased due to the insertion of TPBi with a high electron mobility, the quantum efficiency of the PHOLEDs decreased due to the hindrance of the exciton energy transfer by TPBi molecules. The electroluminescence spectra for the PHOLEDs with an tris(2-phenylpyridine)iridium-doped mixed host EML showed that the TPBi molecules in the mixed host EML increased the electron injection into the mixed host EML, resulting in a decrease of the shift length of the recombination zone in comparison with a single host EML.

Radiosynthesis of [13N]dantrolene, a positron emission tomography probe for breast cancer resistant protein, using no-carrier-added [13N]ammonia.

PubMed

Kumata, Katsushi; Ogawa, Masanao; Takei, Makoto; Fujinaga, Masayuki; Yoshida, Yuichiro; Nengaki, Nobuki; Fukumura, Toshimitsu; Suzuki, Kazutoshi; Zhang, Ming-Rong

2012-01-01

Dantrolene (1) is a substrate for breast cancer resistant protein, which is widely distributed in the blood-brain-barrier, intestine, gall bladder, and liver. PET study with 1 labeled with a positron emitter can be used to visualize BCRP and to elucidate the effect of BCRP on the pharmacokinetics of drugs. The objective of this study was to label 1 using nitrogen-13 ((13)N, a positron emitter; half-life: 9.9min). Using no-carrier-added [(13)N]NH(3) as the labeling agent, we synthesized [(13)N]dantrolene ([(13)N]1) for the first time. The reaction of carbomyl chloride 2b with [(13)N]NH(3) gave an unsymmetrical urea [(13)N]3, followed by cyclization of [(13)N]3 to afford [(13)N]1. Due to its instability, 2b was prepared in situ by treating amine 5 with triphosgene in a ratio of 4 to 1 and used for subsequent [(13)N]ammonolysis without purification. Copyright © 2011 Elsevier Ltd. All rights reserved.

Determination of the molecular structure of tetrakis(trimethylsilyl)hydrazine, N 2(SiMe 3) 4, in the gas phase by electron diffraction

NASA Astrophysics Data System (ADS)

Brain, Paul T.; Irving, Iain A.; Rankin, David W. H.; Robertson, Heather E.; Leung, Wing-Por; Bühl, Michael

1997-09-01

The gas-phase molecular structure of tetrakis(trimethylsily)hydrazine, N 2(SiMe 3) 4, in the gas phase has been determined by electron diffraction. The skeleton consists of two planar NSi 2 fragments which are not coplanar, but twisted 86.9(38)° relative to one another. This conformation, combined with the arrangements of the trimethylsilyl groups, gives the molecule overall D2 symmetry, and ensures that there are no major steric interactions between the groups. Ab initio calculations at the {SCF}/{6-31 G∗ } level confirm that D2 symmetry is favoured. The bond lengths ( ra) of 143.3(16) pm for NN. 175.9(5) pm for SiN and 187.5(2) pm for SiC, and the SiNSi and CSiC angles of 124.1(15)° and 108.8(7) respectively, also indicate that this is not a severely strained molecule, although the SiN distance is quite long, being comparable to that observed in N(SiMe 3) 3.

Gas-sensing performances of Cd-doped ZnO nanoparticles synthesized by a surfactant-mediated method for n-butanol gas

NASA Astrophysics Data System (ADS)

Zhao, Rongjun; Li, Kejin; Wang, Zhezhe; Xing, Xinxin; Wang, Yude

2018-01-01

Zinc oxide nanoparticles with the different Cd doping contents were prepared by with a surfactant-mediated method in this paper. The effects of Cd doping on the gas sensing properties of the ZnO nanoparticles were studied. The morphology and microstructure of as-prepared samples were characterized by X-ray diffraction (XRD); scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high-resolution TEM (HRTEM), respectively. The results reveal that all the products are the high crystalline hexagonal wurtzite ZnO crystal structure. The gas-sensing characteristics of the Cd doped ZnO nanoparticles for volatile organic compounds (VOCs) were investigated. At its optimal operation temperature of 300 °C, the sensing properties of the Cd doped ZnO nanoparticles for n-butanol gas exhibit a high-performance gas sensing performances including high gas response, good selectivity, response/recovery time, and repeatability as well as stability. Especially, its response reaches 130 for 100 ppm n-butanol of ZnO nanoparticles with 2.5% Cd doping. Those values demonstrate the potential of using as-prepared Cd doped ZnO nanoparticles for n-butanol gas detection, making them to be promising candidates for practical detectors to n-butanol gas. Apart from these, the mechanism related to the advanced properties was also investigated and presented.

Numerical simulations of CO2 -assisted gas production from hydrate reservoirs

NASA Astrophysics Data System (ADS)

Sridhara, P.; Anderson, B. J.; Myshakin, E. M.

2015-12-01

A series of experimental studies over the last decade have reviewed the feasibility of using CO2 or CO2+N2 gas mixtures to recover CH4 gas from hydrates deposits. That technique would serve the dual purpose of CO2 sequestration and production of CH4 while maintaining the geo-mechanical stability of the reservoir. In order to analyze CH4 production process by means of CO2 or CO2+N2 injection into gas hydrate reservoirs, a new simulation tool, Mix3HydrateResSim (Mix3HRS)[1], was previously developed to account for the complex thermodynamics of multi-component hydrate phase and to predict the process of CH4 substitution by CO2 (and N2) in the hydrate lattice. In this work, Mix3HRS is used to simulate the CO2 injection into a Class 2 hydrate accumulation characterized by a mobile aqueous phase underneath a hydrate bearing sediment. That type of hydrate reservoir is broadly confirmed in permafrost and along seashore. The production technique implies a two-stage approach using a two-well design, one for an injector and one for a producer. First, the CO2 is injected into the mobile aqueous phase to convert it into immobile CO2 hydrate and to initiate CH4 release from gas hydrate across the hydrate-water boundary (generally designating the onset of a hydrate stability zone). Second, CH4 hydrate decomposition is induced by the depressurization method at a producer to estimate gas production potential over 30 years. The conversion of the free water phase into the CO2 hydrate significantly reduces competitive water production in the second stage, thereby improving the methane gas production. A base case using only the depressurization stage is conducted to compare with enhanced gas production predicted by the CO2-assisted technique. The approach also offers a possibility to permanently store carbon dioxide in the underground formation to greater extent comparing to a direct injection of CO2 into gas hydrate sediment. Numerical models are based on the hydrate formations at the

Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hahn, Herwig, E-mail: hahn@gan.rwth-aachen.de; Reuters, Benjamin; Geipel, Sascha

2015-03-14

GaN-based heterostructure FETs (HFETs) featuring a 2-D electron gas (2DEG) can offer very attractive device performance for power-switching applications. This performance can be assessed by evaluation of the dynamic on-resistance R{sub on,dyn} vs. the breakdown voltage V{sub bd}. In literature, it has been shown that with a high V{sub bd}, R{sub on,dyn} is deteriorated. The impairment of R{sub on,dyn} is mainly driven by electron injection into surface, barrier, and buffer traps. Electron injection itself depends on the electric field which typically peaks at the gate edge towards the drain. A concept suitable to circumvent this issue is the charge-balancing conceptmore » which employs a 2-D hole gas (2DHG) on top of the 2DEG allowing for the electric field peak to be suppressed. Furthermore, the 2DEG concentration in the active channel cannot decrease by a change of the surface potential. Hence, beside an improvement in breakdown voltage, also an improvement in dynamic behaviour can be expected. Whereas the first aspect has already been demonstrated, the second one has not been under investigation so far. Hence, in this report, the effect of charge-balancing is discussed and its impact on the dynamic characteristics of HFETs is evaluated. It will be shown that with appropriate device design, the dynamic behaviour of HFETs can be improved by inserting an additional 2DHG.« less

N2 Gas Flushing Limits the Rise of Antibiotic-Resistant Bacteria in Bovine Raw Milk during Cold Storage

PubMed Central

Munsch-Alatossava, Patricia; Jääskeläinen, Susanna; Alatossava, Tapani; Gauchi, Jean-Pierrre

2017-01-01

Antibiotic resistance has been noted to be a major and increasing human health issue. Cold storage of raw milk promotes the thriving of psychrotrophic/psychrotolerant bacteria, which are well known for their ability to produce enzymes that are frequently heat stable. However, these bacteria also carry antibiotic resistance (AR) features. In places, where no cold chain facilities are available and despite existing recommendations numerous adulterants, including antibiotics, are added to raw milk. Previously, N2 gas flushing showed real potential for hindering bacterial growth in raw milk at a storage temperature ranging from 6 to 25°C. Here, the ability of N2 gas (N) to tackle antibiotic- resistant bacteria was tested and compared to that of the activated lactoperoxidase system (HT) for three raw milk samples that were stored at 6°C for 7 days. To that end, the mesophiles and psychrotrophs that were resistant to gentamycin (G), ceftazidime (Ce), levofloxacin (L), and trimethoprim-sulfamethoxazole (TS) were enumerated. For the log10 ratio (which is defined as the bacterial counts from a certain condition divided by the counts on the corresponding control), classical Analyses of Variance (ANOVA) was performed, followed by a mean comparison with the Ryan-Einot-Gabriel-Welsch multiple range test (REGWQ). If the storage “time” factor was the major determinant of the recorded effects, cold storage alone or in combination with HT or with N promoted a sample-dependent response in consideration of the AR levels. The efficiency of N in limiting the increase in AR was highest for fresh raw milk and was judged to be equivalent to that of HT for one sample and superior to that of HT for the two other samples; moreover, compared to HT, N seemed to favor a more diverse community at 6°C that was less heavily loaded with antibiotic multi-resistance features. Our results imply that N2 gas flushing could strengthen cold storage of raw milk by tackling the bacterial spoilage

Laser spectroscopy of a halocarbocation in the gas phase: CH2I+.

PubMed

Tao, Chong; Mukarakate, Calvin; Reid, Scott A

2006-07-26

We report the first gas-phase observation of the electronic spectrum of a simple halocarbocation, CH2I+. The ion was generated rotationally cold (Trot approximately 20 K) using pulsed discharge methods and was detected via laser spectroscopy. The identity of the spectral carrier was confirmed by modeling the rotational contour observed in the excitation spectra and by comparison of ground state vibrational frequencies determined by single vibronic level emission spectroscopy with Density Functional Theory (DFT) predictions. The transition was assigned as 3A1 <-- X1A1. This initial detection of the electronic spectrum of a halocarbocation in the gas phase should open new avenues for study of the structure and reactivity of these important ions.

Infrared spectra of N2O-(ortho-D2)N and N2O-(HD)N clusters trapped in bulk solid parahydrogen.

PubMed

Lorenz, Britney D; Anderson, David T

2007-05-14

High-resolution infrared spectra of the clusters N2O-(ortho-D2)N and N2O-(HD)N, N=1-4, isolated in bulk solid parahydrogen at liquid helium temperatures are studied in the 2225 cm-1 region of the nu3 antisymmetric stretch of N2O. The clusters form during vapor deposition of separate gas streams of a precooled hydrogen mixture (ortho-D2para-H2 or HDpara-H2) and N2O onto a BaF2 optical substrate held at approximately 2.5 K in a sample-in-vacuum liquid helium cryostat. The cluster spectra reveal the N2O nu3 vibrational frequency shifts to higher energy as a function of N, and the shifts are larger for ortho-D2 compared to HD. These vibrational shifts result from the reduced translational zero-point energy for N2O solvated by the heavier hydrogen isotopomers. These spectra allow the N=0 peak at 2221.634 cm-1, corresponding to the nu3 vibrational frequency of N2O isolated in pure solid parahydrogen, to be assigned. The intensity of the N=0 absorption feature displays a strong temperature dependence, suggesting that significant structural changes occur in the parahydrogen solvation environment of N2O in the 1.8-4.9 K temperature range studied.

Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Persson, Ingemar; Nilsson, Daniel

A high mobility of 2250 cm{sup 2}/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm{sup 2}/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, andmore » trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.« less

Cyclic Nanostructures of Tungsten Oxide (WO3) n   (n = 2-6) as NO x Gas Sensor: A Theoretical Study.

PubMed

Izadyar, Mohammad; Jamsaz, Azam

2014-01-01

Today's WO3-based gas sensors have received a lot of attention, because of important role as a sensitive layer for detection of the small quantities of  NO x . In this research, a theoretical study has been done on the sensing properties of different cyclic nanoclusters of (WO3) n   (n = 2-6) for NO x   (x = 1,2) gases. Based on the calculated adsorption energies by B3LYP and X3LYP functionals, from the different orientations of  NO x molecule on the tungsten oxide clusters, O-N⋯W was preferred. Different sizes of the mentioned clusters have been analyzed and W2O6 cluster was chosen as the best candidate for NO x detection from the energy viewpoint. Using the concepts of the chemical hardness and electronic charge transfer, some correlations between the energy of adsorption and interaction energy have been established. These analyses confirmed that the adsorption energy will be boosted with charge transfer enhancement. However, the chemical hardness relationship is reversed. Finally, obtained results from the natural bond orbital and electronic density of states analysis confirmed the electronic charge transfer from the adsorbates to WO3 clusters and Fermi level shifting after adsorption, respectively. The last parameter confirms that the cyclic clusters of tungsten oxide can be used as NO x gas sensors.

Influence of Ar/O2/H2O Feed Gas and N2/O2/H2O Environment on the Interaction of Time Modulated MHz Atmospheric Pressure Plasma Jet (APPJ) with Model Polymers

NASA Astrophysics Data System (ADS)

Oehrlein, Gottlieb; Luan, Pingshan; Knoll, Andrew; Kondeti, Santosh; Bruggeman, Peter

2016-09-01

An Ar/O2/H2O fed time modulated MHz atmospheric pressure plasma jet (APPJ) in a sealed chamber was used to study plasma interaction with model polymers (polystyrene, poly-methyl methacrylate, etc.). The amount of H2O in the feed gas and/or present in the N2, O2, or N2/O2 environment was controlled. Short lived species such as O atoms and OH radicals play a crucial role in polymer etching and surface modifications (obtained from X-ray photoelectron spectroscopy of treated polymers without additional atmospheric exposure). Polymer etching depth for Ar/air fed APPJ mirrors the decay of gas phase O atoms with distance from the APPJ nozzle in air and is consistent with the estimated O atom flux at the polymer surface. Furthermore, whereas separate O2 or H2O admixture to Ar enhances polymer etching, simultaneous addition of O2 and H2O to Ar quenches polymer etching. This can be explained by the mutual quenching of O with OH, H and HO2 in the gas phase. Results where O2 and/or H2O in the environment were varied are consistent with these mechanisms. All results will be compared with measured and simulated species densities reported in the literature. We gratefully acknowledge funding from US Department of Energy (DE-SC0001939) and National Science Foundation (PHY-1415353).

14 CFR 250.2b - Carriers to request volunteers for denied boarding.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Carriers to request volunteers for denied... (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS OVERSALES § 250.2b Carriers to request volunteers for denied boarding. (a) In the event of an oversold flight, every carrier shall request volunteers for denied...

14 CFR 250.2b - Carriers to request volunteers for denied boarding.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 4 2012-01-01 2012-01-01 false Carriers to request volunteers for denied... (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS OVERSALES § 250.2b Carriers to request volunteers for denied boarding. (a) In the event of an oversold flight, every carrier shall request volunteers for denied...

14 CFR 250.2b - Carriers to request volunteers for denied boarding.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 4 2013-01-01 2013-01-01 false Carriers to request volunteers for denied... (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS OVERSALES § 250.2b Carriers to request volunteers for denied boarding. (a) In the event of an oversold flight, every carrier shall request volunteers for denied...

14 CFR 250.2b - Carriers to request volunteers for denied boarding.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 14 Aeronautics and Space 4 2014-01-01 2014-01-01 false Carriers to request volunteers for denied... (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS OVERSALES § 250.2b Carriers to request volunteers for denied boarding. (a) In the event of an oversold flight, every carrier shall request volunteers for denied...

14 CFR 250.2b - Carriers to request volunteers for denied boarding.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 4 2011-01-01 2011-01-01 false Carriers to request volunteers for denied... (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS OVERSALES § 250.2b Carriers to request volunteers for denied boarding. (a) In the event of an oversold flight, every carrier shall request volunteers for denied...

Ultrathin graphene oxide-based hollow fiber membranes with brush-like CO2-philic agent for highly efficient CO2 capture.

PubMed

Zhou, Fanglei; Tien, Huynh Ngoc; Xu, Weiwei L; Chen, Jung-Tsai; Liu, Qiuli; Hicks, Ethan; Fathizadeh, Mahdi; Li, Shiguang; Yu, Miao

2017-12-13

Among the current CO 2 capture technologies, membrane gas separation has many inherent advantages over other conventional techniques. However, fabricating gas separation membranes with both high CO 2 permeance and high CO 2 /N 2 selectivity, especially under wet conditions, is a challenge. In this study, sub-20-nm thick, layered graphene oxide (GO)-based hollow fiber membranes with grafted, brush-like CO 2 -philic agent alternating between GO layers are prepared by a facile coating process for highly efficient CO 2 /N 2 separation under wet conditions. Piperazine, as an effective CO 2 -philic agent, is introduced as a carrier-brush into the GO nanochannels with chemical bonding. The membrane exhibits excellent separation performance under simulated flue gas conditions with CO 2 permeance of 1,020 GPU and CO 2 /N 2 selectivity as high as 680, demonstrating its potential for CO 2 capture from flue gas. We expect this GO-based membrane structure combined with the facile coating process to facilitate the development of ultrathin GO-based membranes for CO 2 capture.

Soil Greenhouse Gas Fluxes, Environmental Controls, and the Partitioning of N2O Sources in UK Natural and Seminatural Land Use Types

NASA Astrophysics Data System (ADS)

Sgouridis, Fotis; Ullah, Sami

2017-10-01

Natural and seminatural terrestrial ecosystems (unmanaged peatlands and forests and extensive and intensive grasslands) have been under-represented in the UK greenhouse gas (GHG) inventory. Mechanistic studies of GHG fluxes and their controls can improve the prediction of the currently uncertain GHG annual emission estimates. The source apportionment of N2O emissions can further inform management plans for GHG mitigation. We have measured in situ GHG fluxes monthly in two replicated UK catchments and evaluated their environmental controlling factors. An adapted 15N-gas flux method with low addition of 15N tracer (0.03-0.5 kg 15N ha-1) was used to quantify the relative contribution of denitrification to net N2O production. Total N2O fluxes were 40 times higher in the intensive grasslands than in the peatlands (range: -1.32 to 312.3 μg N m-2 h-1). The contribution of denitrification to net N2O emission varied across the land use types and ranged from 9 to 60%. Soil moisture was the key parameter regulating the partitioning of N2O sources (r2 = 0.46). Total N2O fluxes were explained by a simple model (r2 = 0.83) including parameters such as total dissolved nitrogen, organic carbon, and water content. A parsimonious model with the soil moisture content as a single scalar parameter explained 84% of methane flux variability across land uses. The assumption that 1% of the atmospherically deposited N on natural ecosystems is emitted as N2O could be overestimated or underestimated (0.3-1.6%). The use of land use-specific N2O emission factors and further information on N2O source partitioning should help constrain this uncertainty.

Fluid inclusion volatile analysis by gas chromatography with photoionization micro-thermal conductivity detectors: Applications to magmatic MoS 2 and other H 2O-CO 2 and H 2O-CH 4 fluids

NASA Astrophysics Data System (ADS)

Bray, C. J.; Spooner, E. T. C.

1992-01-01

Eighteen fluid inclusion volatile peaks have been detected and identified from 1-2 g samples (quartz) by gas chromatography using heated (~105°C) on-line crushing, helium carrier gas, a single porous polymer column (HayeSep R; 10' × 1/8″: 100/120#; Ni alloy tubing), two temperature programme conditions for separate sample aliquots, micro-thermal conductivity (TCD) and photoionization detectors (PID; 11.7 eV lamp), and off-line digital peak processing. In order of retention time these volatile peaks are: N 2, Ar, CO, CH 4, CO 2, C 2H 4, C 2H 6, C 2H 2, COS, C 3H 6, C 3H 8, C 3H 4 (propyne), H 2O (22.7 min at 80°C), SO 2, ± iso- C4H10 ± C4H8 (1-butene) ± CH3SH, C 4H 8 (iso-butylene), (?) C 4H 6 (1,3 butadiene) and ± n- C4H10 ± C4H8 (trans-2-butene) (80 and -70°C temperature programme conditions combined). H 2O is analysed directly. O 2 can be analysed cryogenically between N 2 and Ar, but has not been detected in natural samples to date in this study. H 2S, SO 2, NH 3, HCl, HCN, and H 2 ca nnot be analysed at present. Blanks determined by crushing heat-treated Brazilian quartz (800-900°C/4 h) are zero for 80°C temperature programme conditions, except for a large, unidentified peak at ~64 min, but contain H 2O, CO 2, and some low molecular weight hydrocarbons at -70°C temperature conditions due to cryogenic accumulation from the carrier gas and subsequent elution. TCD detection limits are ~30 ppm molar in inclusions; PID detection limits are ~ 1 ppm molar in inclusions and lower for unsaturated hydrocarbons (e.g., ~0.2 ppm for C 2H 4; ~ 1 ppb for C 2H 2; ~0.3 ppb for C 3H 6). Precisions (1σ) are ~ ±1-2% and ~ ± 13% for H 2O in terms of total moles detected; the latter value is equivalent to ±0.6 mol% at the 95 mol% H 2O level. Major fluid inclusion volatile species have been successfully analysed on a ~50 mg fluid inclusion section chip (~7 mm × ~10 mm × ~100 μm). Initial inclusion volatile analyses of fluids of interpreted magmatic origin from

p-type zinc-blende GaN on GaAs substrates

NASA Astrophysics Data System (ADS)

Lin, M. E.; Xue, G.; Zhou, G. L.; Greene, J. E.; Morkoç, H.

1993-08-01

We report p-type cubic GaN. The Mg-doped layers were grown on vicinal (100) GaAs substrates by plasma-enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron-cyclotron resonance source. p-type zinc-blende-structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x-ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN

NASA Astrophysics Data System (ADS)

Collins, K. C.; Armstrong, A. M.; Allerman, A. A.; Vizkelethy, G.; Van Deusen, S. B.; Léonard, F.; Talin, A. A.

2017-12-01

Inherent advantages of wide bandgap materials make GaN-based devices attractive for power electronics and applications in radiation environments. Recent advances in the availability of wafer-scale, bulk GaN substrates have enabled the production of high quality, low defect density GaN devices, but fundamental studies of carrier transport and radiation hardness in such devices are lacking. Here, we report measurements of the hole diffusion length in low threading dislocation density (TDD), homoepitaxial n-GaN, and high TDD heteroepitaxial n-GaN Schottky diodes before and after irradiation with 2.5 MeV protons at fluences of 4-6 × 1013 protons/cm2. We also characterize the specimens before and after irradiation using electron beam-induced-current (EBIC) imaging, cathodoluminescence, deep level optical spectroscopy (DLOS), steady-state photocapacitance, and lighted capacitance-voltage (LCV) techniques. We observe a substantial reduction in the hole diffusion length following irradiation (50%-55%) and the introduction of electrically active defects which could be attributed to gallium vacancies and associated complexes (VGa-related), carbon impurities (C-related), and gallium interstitials (Gai). EBIC imaging suggests long-range migration and clustering of radiation-induced point defects over distances of ˜500 nm, which suggests mobile Gai. Following irradiation, DLOS and LCV reveal the introduction of a prominent optical energy level at 1.9 eV below the conduction band edge, consistent with the introduction of Gai.

Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

2016-02-01

Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

Inerting of magnesium dust cloud with Ar, N2 and CO2.

PubMed

Li, G; Yuan, C M; Fu, Y; Zhong, Y P; Chen, B Z

2009-10-15

Experiments were conducted on the inerting of magnesium dust with N(2), CO(2), and Ar. Comparing the maximum explosion pressure, maximum rate of pressure rise, and limiting oxygen concentration with different inertants, it was determined that Ar is not the best inert gas under all conditions as commonly believed. N(2) was more effective than Ar as an inertant. CO(2) provided more inerting effect than either Ar and N(2) in low magnesium dust concentrations, although explosibility was increased at higher dust concentrations. Both N(2) and CO(2) as inerting agents showed higher LOC values than Ar. These results indicated that N(2) is a more economical inerting gas than Ar for the tested coarse magnesium dust.

The mitochondrial dicarboxylate and 2-oxoglutarate carriers do not transport glutathione

PubMed Central

Booty, Lee M.; King, Martin S.; Thangaratnarajah, Chancievan; Majd, Homa; James, Andrew M.; Kunji, Edmund R.S.; Murphy, Michael P.

2015-01-01

Glutathione carries out vital protective roles within mitochondria, but is synthesised in the cytosol. Previous studies have suggested that the mitochondrial dicarboxylate and 2-oxoglutarate carriers were responsible for glutathione uptake. We set out to characterise the putative glutathione transport by using fused membrane vesicles of Lactococcus lactis overexpressing the dicarboxylate and 2-oxoglutarate carriers. Although transport of the canonical substrates could be measured readily, an excess of glutathione did not compete for substrate uptake nor could transport of glutathione be measured directly. Thus these mitochondrial carriers do not transport glutathione and the identity of the mitochondrial glutathione transporter remains unknown. PMID:25637873

Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Hertkorn, J.; Thapa, S. B.; Wunderer, T.; Scholz, F.; Wu, Z. H.; Wei, Q. Y.; Ponce, F. A.; Moram, M. A.; Humphreys, C. J.; Vierheilig, C.; Schwarz, U. T.

2009-07-01

In this study, we present theoretical and experimental results regarding highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures. Based on simulation results, several multiheterostructures were grown by metalorganic vapor phase epitaxy. Using high resolution x-ray diffraction and x-ray reflectometry, the abruptness of the AlGaN/AlN/GaN interfaces could be determined. Using electron holography, the energetic profile of the valence band could be measured, yielding important information about the vertical carrier transport in such multiheterostructures. The electrical properties of the samples were investigated by measuring the lateral (σL) and vertical (σV) conductivity, respectively. The free hole concentration of a sample optimized in terms of lateral conductivity was measured to be 1.2×1019 cm-3 (295 K) with a mobility of 7 cm2/V s, yielding a record σL of 13.7 (Ω cm)-1. Low temperature Hall measurements (77 K) proved the existence of a two-dimensional hole gas at the AlN/GaN interface, as the lateral conductivity could be increased to 30 (Ω cm)-1 and no carrier freeze out was observable. By substituting the p-GaN layer in a light emitting diode (LED) with an AlGaN/GaN multiheterostructure, the overall voltage drop could be reduced by more than 100 mV (j =65 A/cm2). Furthermore improved current spreading on the p-side of LEDs with integrated AlGaN/AlN/GaN multiheterostructures could be proved by μ-electroluminescence, respectively.

Mathematical analysis of the Photovoltage Decay (PVD) method for minority carrier lifetime measurements

NASA Technical Reports Server (NTRS)

Vonroos, O. H.

1982-01-01

When the diffusion length of minority carriers becomes comparable with or larger than the thickness of a p-n junction solar cell, the characteristic decay of the photon-generated voltage results from a mixture of contributions with different time constants. The minority carrier recombination lifetime tau and the time constant l(2)/D, where l is essentially the thickness of the cell and D the minority carrier diffusion length, determine the signal as a function of time. It is shown that for ordinary solar cells (n(+)-p junctions), particularly when the diffusion length L of the minority carriers is larger than the cell thickness l, the excess carrier density decays according to exp (-t/tau-pi(2)Dt/4l(2)), tau being the lifetime. Therefore, tau can be readily determined by the photovoltage decay method once D and L are known.

COMPARISON OF AGE AT NATURAL MENOPAUSE IN BRCA1/2 MUTATION CARRIERS TO A NON-CLINIC-BASED SAMPLE OF WOMEN IN NORTHERN CALIFORNIA

PubMed Central

Lin, Wayne T; Beattie, Mary; Chen, Lee-may; Oktay, Kutluk; Crawford, Sybil L.; Gold, Ellen B.; Cedars, Marcelle; Rosen, Mitchell

2013-01-01

Objective Germline mutations in BRCA1/2 are related to increased lifetime risk of breast and ovarian cancer. While risk-reducing salpingo-oophorectomy reduces the risk for both cancers, loss of fertility is a major concern. A recent study suggested an association of BRCA1 mutation with occult primary ovarian insufficiency. The aim of this study was to determine whether BRCA1/2 mutation carriers have earlier onset of natural menopause than unaffected women. Materials and Methods Caucasian BRCA1/2 carriers (n=382) were identified within the UCSF Breast Cancer Risk Program Registry and compared to non-clinic-based Caucasian women in Northern California (n=765). We compared the two groups regarding median age at natural menopause before and after adjustment for known risk factors, and examined the role of smoking within each group, using the Kaplan-Meier approach for unadjusted analyses and Cox proportional hazards regression analyses for adjusted analyses. Results The median age at natural menopause in BRCA1/2 carriers was significantly earlier than the unaffected sample (50 vs 53years, p-value<0.001). The unadjusted hazard ratio for natural menopause comparing BRCA1/2 carriers to unaffected women was 4.06(95% confidence interval 3.03-5.45), 3.98(2.87-5.53) after adjusting for smoking, parity, and oral contraceptive use. For BRCA1/2 carriers who were current heavy smokers (≥20cigarettes/day), the median age at natural menopause was 46 vs.49years for non-smokers (p-value=0.027). Conclusions BRCA1/2 mutation was associated with significantly earlier age at natural menopause, and heavy smoking compounded this risk. As the relationship between menopause and end of natural fertility is considered fixed, these findings suggest a risk of earlier infertility among BRCA1/2 carriers. PMID:23362014

Influence of the activating agent and the inert gas (type and flow) used in an activation process for the porosity development of carbon nanofibers.

PubMed

Jiménez, Vicente; Sánchez, Paula; Valverde, José Luis; Romero, Amaya

2009-08-15

Carbon nanofibers (CNFs) were activated with different activating agents (KOH, KHCO(3) and K(2)CO(3)). The effects of different activations conditions, including type of protector gas (He, Ar and N(2)) and helium flow rate on the properties of activated carbon nanofibers were studied. The structural changes in activated CNFs were investigated using the following characterization techniques: N(2) adsorption isotherms at 77K, XRD, temperature-programmed desorption of hydrogen, TEM, TPO and elemental composition. The results showed that the surface area increased by a factor of 3.3, 2.0 and 1.8 referred to the parent CNFs after the treatment with KOH, K(2)CO(3) and KHCO(3), respectively. In addition, KOH generated a greater pore volume than the other activating agents; micropores were mainly generated during the process. Finally, different carrier gases were added during the activation in order to study their influence on the pore opening behavior of CNFs. It was found that the activation degree increased in the following order: Ar<N(2)carrier gas, the microporosity was strongly developed.

A variable conductance gas switch for intermediate temperature operation of liquid He/liquid N2 cryostats

NASA Technical Reports Server (NTRS)

Rayner, J. T.; Chuter, T. C.; Mclean, I. S.; Radostitz, J. V.; Nolt, I. G.

1988-01-01

A technique for establishing a stable intermediate temperature stage in liquid He/liquid N2 double vessel cryostats is described. The tertiary cold stage, which can be tuned to any temperature between 10 and 60 K, is ideal for cooling IR sensors for use in astronomy and physics applications. The device is called a variable-conductance gas switch. It is essentially a small chamber, located between the cold stage and liquid helium cold-face, whose thermal conductance may be controlled by varying the pressure of helium gas within the chamber. A key feature of this device is the large range of temperature control achieved with a very small (less than 10 mW) heat input from the cryogenic temperature control switch.

Effect of stabilization temperature during pyrolysis process of P84 co-polyimide-based tubular carbon membrane for H2/N2 and He/N2 separations

NASA Astrophysics Data System (ADS)

Sazali, N.; Salleh, W. N. W.; Ismail, A. F.; Ismail, N. H.; Aziz, F.; Yusof, N.; Hasbullah, H.

2018-04-01

In this study, the effect of stabilization temperature on the performance of tubular carbon membrane was being investigated. P84 co-polyimide-based tubular carbon membrane will be fabricated through the dip-coating technique. The tubular carbon membrane performance can be controlled by manipulating the pyrolysis conditions which was conducted at different stabilization temperatures of 250, 300, 350, 400, and 450°C under N2 environment (200 ml/min). The prepared membranes were characterized by using scanning electron microscopy (SEM), x-ray diffraction (XRD), and pure gas permeation system. The pure gas of H2, He, and N2 were used to determine the permeation properties of the carbon membrane. The P84 co-polyimide-based tubular carbon membrane stabilized at 300°C demonstrated an excellent permeation property with H2, He, and N2 gas permeance of 1134.51±2.87, 1287.22±2.86 and 2.98±1.28GPU, respectively. The highest H2/N2 and He/N2 selectivity of 380.71±2.34 and 431.95±2.61 was obtained when the stabilization temperature of 450°C was applied. It is concluded that the stabilization temperatures have protrusive effect on the carbon membrane properties specifically their pore structure, and eventually their gas separation properties.

Characteristics of n-GaN After Cl2/Ar and Cl2/N2 Inductively Coupled Plasma Etching

NASA Astrophysics Data System (ADS)

Han, Yan-Jun; Xue, Song; Guo, Wen-Ping; Sun, Chang-Zheng; Hao, Zhi-Biao; Luo, Yi

2003-10-01

A systematic study on the effect of inductively coupled plasma (ICP) etching on n-type GaN is presented. The optical and electrical properties and surface stoichiometry of n-type GaN are evaluated using room-temperature photoluminescence (PL) and current-voltage (I-V) characteristic measurements, and X-ray photoelectron spectroscopy (XPS), respectively. Investigation of the effect of additive gas (N2 and Ar) and RF power on these characteristics has also been carried out. It is shown that the decrease in the O/Ga ratio after ICP etching can suppress the deterioration of the near-band-edge emission intensity. Furthermore, N vacancy (VN) with a shallow donor nature and Ga vacancy (VGa) with a deep acceptor nature are generated after ICP etching upon the addition of Ar and N2 to Cl2 plasma, respectively. Lower ohmic contact resistance could be obtained when VN or ion-bombardment-induced defect is dominant at the surface. Improved etching conditions have been obtained based on these results.

Extraordinary improvement of gas-sensing performances in SnO2 nanofibers due to creation of local p-n heterojunctions by loading reduced graphene oxide nanosheets.

PubMed

Lee, Jae-Hyoung; Katoch, Akash; Choi, Sun-Woo; Kim, Jae-Hun; Kim, Hyoun Woo; Kim, Sang Sub

2015-02-11

We propose a novel approach to improve the gas-sensing properties of n-type nanofibers (NFs) that involves creation of local p-n heterojunctions with p-type reduced graphene oxide (RGO) nanosheets (NSs). This work investigates the sensing behaviors of n-SnO2 NFs loaded with p-RGO NSs as a model system. n-SnO2 NFs demonstrated greatly improved gas-sensing performances when loaded with an optimized amount of p-RGO NSs. Loading an optimized amount of RGOs resulted in a 20-fold higher sensor response than that of pristine SnO2 NFs. The sensing mechanism of monolithic SnO2 NFs is based on the joint effects of modulation of the potential barrier at nanograin boundaries and radial modulation of the electron-depletion layer. In addition to the sensing mechanisms described above, enhanced sensing was obtained for p-RGO NS-loaded SnO2 NFs due to creation of local p-n heterojunctions, which not only provided a potential barrier, but also functioned as a local electron absorption reservoir. These mechanisms markedly increased the resistance of SnO2 NFs, and were the origin of intensified resistance modulation during interaction of analyte gases with preadsorbed oxygen species or with the surfaces and grain boundaries of NFs. The approach used in this work can be used to fabricate sensitive gas sensors based on n-type NFs.

Real-time N2O gas detection system for agricultural production using a 4.6-µm-band laser source based on a periodically poled LiNbO3 ridge waveguide.

PubMed

Tokura, Akio; Asobe, Masaki; Enbutsu, Koji; Yoshihara, Toshihiro; Hashida, Shin-nosuke; Takenouchi, Hirokazu

2013-08-05

This article describes a gas monitoring system for detecting nitrous oxide (N2O) gas using a compact mid-infrared laser source based on difference-frequency generation in a quasi-phase-matched LiNbO3 waveguide. We obtained a stable output power of 0.62 mW from a 4.6-μm-band continuous-wave laser source operating at room temperature. This laser source enabled us to detect atmospheric N2O gas at a concentration as low as 35 parts per billion. Using this laser source, we constructed a new real-time in-situ monitoring system for detecting N2O gas emitted from potted plants. A few weeks of monitoring with the developed detection system revealed a strong relationship between nitrogen fertilization and N2O emission. This system is promising for the in-situ long-term monitoring of N2O in agricultural production, and it is also applicable to the detection of other greenhouse gases.

Precise control of atomic nitrogen production in an electron cyclotron resonance plasma using N2/noble gas mixtures

NASA Astrophysics Data System (ADS)

Fan, Z. Y.; Newman, N.

1998-07-01

The atomic nitrogen flux and impacting ion kinetic energy are two important parameters which influence the quality of deposited nitride films using reactive growth. In this letter, a method is described to control the flux and kinetic energy of atomic and molecular nitrogen ions using an electron cyclotron resonance plasma with N2/Ar and N2/Ne gas mixtures. The results clearly show that the addition of neon to nitrogen plasma can remarkably enhance the production rate of atomic nitrogen due to Penning ionization involving the metastable state of Ne. In contrast, the addition of argon significantly decreases the rate.

Potential of nitrogen gas (n2) flushing to extend the shelf life of cold stored pasteurised milk.

PubMed

Munsch-Alatossava, Patricia; Ghafar, Abdul; Alatossava, Tapani

2013-03-11

For different reasons, the amount of food loss for developing and developed countries is approximately equivalent. Altogether, these losses represent approximately 1/3 of the global food production. Significant amounts of pasteurised milk are lost due to bad smell and unpleasant taste. Currently, even under the best cold chain conditions, psychrotolerant spore-forming bacteria, some of which also harbour virulent factors, limit the shelf life of pasteurised milk. N2 gas-based flushing has recently been of interest for improving the quality of raw milk. Here, we evaluated the possibility of addressing bacterial growth in pasteurised milk during cold storage at 6 °C and 8 °C. Clearly, the treatments hindered bacterial growth, in a laboratory setting, when N2-treated milk were compared to the corresponding controls, which suggests that N2-flushing treatment constitutes a promising option to extend the shelf life of pasteurised milk.

Potential of Nitrogen Gas (N2) Flushing to Extend the Shelf Life of Cold Stored Pasteurised Milk

PubMed Central

Munsch-Alatossava, Patricia; Ghafar, Abdul; Alatossava, Tapani

2013-01-01

For different reasons, the amount of food loss for developing and developed countries is approximately equivalent. Altogether, these losses represent approximately 1/3 of the global food production. Significant amounts of pasteurised milk are lost due to bad smell and unpleasant taste. Currently, even under the best cold chain conditions, psychrotolerant spore-forming bacteria, some of which also harbour virulent factors, limit the shelf life of pasteurised milk. N2 gas-based flushing has recently been of interest for improving the quality of raw milk. Here, we evaluated the possibility of addressing bacterial growth in pasteurised milk during cold storage at 6 °C and 8 °C. Clearly, the treatments hindered bacterial growth, in a laboratory setting, when N2-treated milk were compared to the corresponding controls, which suggests that N2-flushing treatment constitutes a promising option to extend the shelf life of pasteurised milk. PMID:23478439

14 CFR 221.2 - Carrier's duty.

Code of Federal Regulations, 2010 CFR

2010-01-01

... (d) of this section, every air carrier and every foreign air carrier shall file with the Department, and provide and keep open to public inspection, tariffs showing all fares, and charges for foreign air transportation between points served by it, and between points served by it and points served by any other air...

Effect of different agronomic practises on greenhouse gas emissions, especially N2O and nutrient cycling

NASA Astrophysics Data System (ADS)

Koal, Philipp; Schilling, Rolf; Gerl, Georg; Pritsch, Karin; Munch, Jean Charles

2014-05-01

In order to achieve a reduction of greenhouse gas emissions, management practises need to be adapted by implementing sustainable land use. At first, reliable field data are required to assess the effect of different farming practises on greenhouse gas budgets. The conducted field experiment covers and compares two main aspects of agricultural management, namely an organic farming system and an integrated farming system, implementing additionally the effects of diverse tillage systems and fertilisation practises. Furthermore, the analysis of the alterable biological, physical and chemical soil properties enables a link between the impact of different management systems on greenhouse gas emissions and the monitored cycle of matter, especially the nitrogen cycle. Measurements were carried out on long-term field trials at the Research Farm Scheyern located in a Tertiary hilly landscape approximately 40 km north of Munich (South Germany). The long-term field trials of the organic and integrated farming system were started in 1992. Since then, parcels in a field (each around 0,2-0,4 ha) with a particular interior plot set-up have been conducted. So the 20 years impacts of different tillage and fertilisation practises on soil properties including trace gases were examined. Fluxes of CH4, N2O and CO2 are monitored since 2007 for the integrated farming system trial and since 2012 for the organic farming system trial using an automated system which consists of chambers (per point: 4 chambers, each covering 0,4 m2 area) with a motor-driven lid, an automated gas sampling unit, an on-line gas chromatographic analysis system, and a control and data logging unit (Flessa et al. 2002). Each chamber is sampled 3-4 times in 24 hours. The main outcomes are the analysis of temporal and spatial dynamics of greenhouse gas fluxes as influenced by management practice events (fertilisation and tillage) and weather effects (drying-rewetting, freezing-thawing, intense rainfall and dry periods

Graphene, a material for high temperature devices – intrinsic carrier density, carrier drift velocity, and lattice energy

PubMed Central

Yin, Yan; Cheng, Zengguang; Wang, Li; Jin, Kuijuan; Wang, Wenzhong

2014-01-01

Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semiconductor will fail to function. Here, we measure the intrinsic Fermi level (|EF| = 2.93 kBT) or intrinsic carrier density (nin = 3.87 × 106 cm−2K−2·T2), carrier drift velocity, and G mode phonon energy of graphene devices and their temperature dependencies up to 2400 K. Our results show intrinsic carrier density of graphene is an order of magnitude less sensitive to temperature than those of Si or Ge, and reveal the great potentials of graphene as a material for high temperature devices. We also observe a linear decline of saturation drift velocity with increasing temperature, and identify the temperature coefficients of the intrinsic G mode phonon energy. Above knowledge is vital in understanding the physical phenomena of graphene under high power or high temperature. PMID:25044003

Risk of uterine cancer for BRCA1 and BRCA2 mutation carriers.

PubMed

Lee, Y C; Milne, R L; Lheureux, S; Friedlander, M; McLachlan, S A; Martin, K L; Bernardini, M Q; Smith, C; Picken, S; Nesci, S; Hopper, J L; Phillips, K A

2017-10-01

Whether BRCA1 and BRCA2 mutation carriers have a clinically relevant elevated risk of uterine cancer has implications for risk-reducing surgery. This multicentre, prospective cohort study assessed uterine cancer risk for mutation carriers compared with the general population. Eligible mutation carriers were enrolled in the Kathleen Cuningham Foundation Consortium for Research into Familial Breast Cancer (kConFab) cohort study, had a uterus present and no history of uterine cancer at cohort entry. Epidemiological, lifestyle and clinical data were collected at cohort entry and updated three-yearly. Cancer events were verified using pathology reports. Follow-up was censored at death or last contact. Relative risk of uterine cancer was estimated using the standardised incidence ratio (SIR), with the expected number of cases determined using population-based data for Australia. Of 1,111 mutation carriers in kConFab, 283 were excluded due to prior hysterectomy (N = 278), prior uterine cancer (N = 2) or being non-residents (N = 3). After a median follow-up of 9.0 years, five incident uterine cancers were reported in the 828 eligible women (419 had prior breast cancer and 160 had prior tamoxifen use), compared to 2.04 expected (SIR = 2.45; 95% confidence interval [CI]: 0.80-5.72; P = 0.11). In 438 BRCA1 mutation carriers and 390 BRCA2 mutation carriers, three and two incident cases of uterine cancer were reported, respectively, compared to 1.04 expected (SIR = 2.87; 95% CI: 0.59-8.43; P = 0.18) and 0.99 expected (SIR = 2.01; 95% CI: 0.24-7.30; P = 0.52), respectively. All cases were endometrioid subtype, International Federation of Gynaecology and Obstetrics stage I-II disease. No serous uterine cancers were reported. Our findings are consistent with those from most other reports and do not support routine risk-reducing hysterectomy for BRCA1 and BRCA2 mutation carriers. Copyright © 2017 Elsevier Ltd. All rights reserved.

Photoluminescence-excitation spectroscopy as a highly sensitive probe for carrier transport processes affected by surface damages in AlxGa1-xN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Takeuchi, Hideo; Yamamoto, Yoshitsugu; Kamo, Yoshitaka; Kunii, Tetsuo; Oku, Tomoki; Shirahama, Takeo; Tanaka, Hiroyasu; Nakayama, Masaaki

2007-08-01

We demonstrate that photoluminescence-excitation (PLE) spectroscopy can probe with high sensitivity the effects of plasma-induced surface damages on photogenerated-carrier-transport processes in AlxGa1-xN/GaN heterostructures, on the basis of systematic optical and structural characterization results for the as-grown reference sample and the plasma-exposed sample. It is found from the structural characterizations with atomic force microscopy that the plasma exposure remarkably modifies the atomic step boundaries and the pits on the AlxGa1-xN surface, which leads to a remarkable difference between the PLE spectra of the bound exciton photoluminescence from the underlying GaN layer in the two samples. The PLE spectrum of the reference sample shows a step rising from the AlxGa1-xN fundamental transition energy toward the high energy side, whereas the rising step disappears in the PLE spectrum of the plasma-exposed sample. In contrast, the reflectance characteristics are the same in the two samples; i.e., the excitonic transition itself is not influenced by the plasma exposure. The present findings indicate that the PLE spectral profile is sensitive to the change in efficiency of the photogenerated carrier injection from the AlxGa1-xN layer to the GaN layer. Thus, it is concluded that the PLE characterization is effective to probe the photogenerated-carrier transport in heterostructures.

Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

NASA Astrophysics Data System (ADS)

Matsui, Miyako; Kuwahara, Kenichi

2018-06-01

A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.

Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy

NASA Astrophysics Data System (ADS)

Duc, Tran Thien; Pozina, Galia; Amano, Hiroshi; Monemar, Bo; Janzén, Erik; Hemmingsson, Carl

2016-07-01

Deep levels in Mg-doped GaN grown by metal organic chemical vapor deposition (MOCVD), undoped GaN grown by MOCVD, and halide vapor phase epitaxy (HVPE)-grown GaN have been studied using deep level transient spectroscopy and minority charge carrier transient spectroscopy on Schottky diodes. One hole trap, labeled HT1, was detected in the Mg-doped sample. It is observed that the hole emission rate of the trap is enhanced by increasing electric field. By fitting four different theoretical models for field-assisted carrier emission processes, the three-dimensional Coulombic Poole-Frenkel (PF) effect, three-dimensional square well PF effect, phonon-assisted tunneling, and one-dimensional Coulombic PF effect including phonon-assisted tunneling, it is found that the one-dimensional Coulombic PF model, including phonon-assisted tunneling, is consistent with the experimental data. Since the trap exhibits the PF effect, we suggest it is acceptorlike. From the theoretical model, the zero field ionization energy of the trap and an estimate of the hole capture cross section have been determined. Depending on whether the charge state is -1 or -2 after hole emission, the zero field activation energy Ei 0 is 0.57 eV or 0.60 eV, respectively, and the hole capture cross section σp is 1.3 ×10-15c m2 or 1.6 ×10-16c m2 , respectively. Since the level was not observed in undoped GaN, it is suggested that the trap is associated with an Mg related defect.

Microporous metal organic framework [M2(hfipbb)2(ted)] (M=Zn, Co; H2hfipbb=4,4-(hexafluoroisopropylidene)-bis(benzoic acid); ted=triethylenediamine): Synthesis, structure analysis, pore characterization, small gas adsorption and CO2/N2 separation properties

NASA Astrophysics Data System (ADS)

Xu, William W.; Pramanik, Sanhita; Zhang, Zhijuan; Emge, Thomas J.; Li, Jing

2013-04-01

Carbon dioxide is a greenhouse gas that is a major contributor to global warming. Developing methods that can effectively capture CO2 is the key to reduce its emission to the atmosphere. Recent research shows that microporous metal organic frameworks (MOFs) are emerging as a promising family of adsorbents that may be promising for use in adsorption based capture and separation of CO2 from power plant waste gases. In this work we report the synthesis, crystal structure analysis and pore characterization of two microporous MOF structures, [M2(hfipbb)2(ted)] (M=Zn (1), Co (2); H2hfipbb=4,4-(hexafluoroisopropylidene)-bis(benzoic acid); ted=triethylenediamine). The CO2 and N2 adsorption experiments and IAST calculations are carried out on [Zn2(hfipbb)2(ted)] under conditions that mimic post-combustion flue gas mixtures emitted from power plants. The results show that the framework interacts with CO2 strongly, giving rise to relatively high isosteric heats of adsorption (up to 28 kJ/mol), and high adsorption selectivity for CO2 over N2, making it promising for capturing and separating CO2 from CO2/N2 mixtures.

Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

NASA Astrophysics Data System (ADS)

Kim, Seong Yeoul; Park, Seonyoung; Choi, Woong

2016-10-01

We report the effect of Al2O3 encapsulation on the carrier mobility and contact resistance of multilayer MoS2 thin-film transistors by statistically investigating 70 devices with SiO2 bottom-gate dielectric. After Al2O3 encapsulation by atomic layer deposition, calculation based on Y-function method indicates that the enhancement of carrier mobility from 24.3 cm2 V-1 s-1 to 41.2 cm2 V-1 s-1 occurs independently from the reduction of contact resistance from 276 kΩ.μm to 118 kΩ.μm. Furthermore, contrary to the previous literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method of improving the carrier mobility of multilayer MoS2 transistors, providing important implications on the application of MoS2 and other two-dimensional materials into high-performance transistors.

Investigation of carrier escape and recombination dynamics in GaAsN/GaAs superlattice and resonantly coupled quantum well solar cells

NASA Astrophysics Data System (ADS)

Kharel, Khim; Freundlich, Alexandre

2018-02-01

III-V multijunction devices that incorporate a dilute nitride 1-1.2 eV bottom cell have already demonstrated conversion efficiencies of about 44% under high sunlight concentration (942 Suns). However, the poor minority carrier properties of dilute nitride have, thus far, prevented the full realization of the practical potential for tandem configuration (>40% 1 sun, and >50% at 500X and above). To overcome this shortcoming, our group, over the past years, have focused on dilute nitride-based devices where the degraded minority carrier diffusion length has a minimal impact on the device performance. We have shown that the incorporation of resonantly coupled GaAsN/GaP multi-quantum wells in the intrinsic region of p-i-n GaAs cells allows both a significant sub-GaAs-bandgap photon harvesting while maintaining a high open circuit voltage. Here, in order to gain a better understanding of photo-generated carrier escape and recombination mechanisms in these devices and further optimize the performance, we examine optical and electrical properties of such devices using various characterization techniques such as: photoluminescence (PL), modulated photo-reflectance (PR), photo-current (PC) as well as current-voltage (IV) measurements under dark or illuminated conditions. The temperature dependent analysis enables us to modulate and freezes carrier thermalization phenomena, while simultaneous measurement of photogenerated carrier extraction (SR) and recombination's (PL) as a function of the applied load (bias) enables a close correlation between the evolution of I-V characteristics and the physics at play. Next, typical temperature and bias dependent activation energies reveal interesting details about carrier escape, intra-cells coupling and recombination sequences.

Doping and defect-induced germanene: A superior media for sensing H2S, SO2, and CO2 gas molecules

NASA Astrophysics Data System (ADS)

Monshi, M. M.; Aghaei, S. M.; Calizo, I.

2017-11-01

First-principles calculations based on density functional theory (DFT) have been employed to investigate the structural, electronic, and gas-sensing properties of pure, defected, and doped germanene nanosheets. Our calculations have revealed that while a pristine germanene nanosheet adsorbs CO2 weakly, H2S moderately, and SO2 strongly, the introduction of vacancy defects increases the sensitivity significantly which is promising for future gas-sensing applications. Mulliken population analysis imparts that an appreciable amount of charge transfer occurs between gas molecules and a germanene nanosheet which supports our results for adsorption energies of the systems. The enhancement of the interactions between gas molecules and the germanene nanosheet has been further investigated by density of states. Projected density of states provides detailed insight of the gas molecule's contribution in the gas-sensing system. Additionally, the influences of substituted dopant atoms such as B, N, and Al in the germanene nanosheet have also been considered to study the impact on its gas sensing ability. There was no significant improvement found in the doped gas sensing capability of germanene over the vacancy defects, except for CO2 upon adsorption on N-doped germanene.

Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

DOE PAGES

Bang, Junhyeok; Sun, Y. Y.; Song, Jung -Hoon; ...

2016-04-14

Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excited carriers recombine via a Frenkel-pair (FP) defect formation. While in the ground state the FP is high in energy and is unlikely to form, in the electronic excited states its formation is enabled by a strong electron-phonon coupling of the excited carriers. As a result, this NRR mechanism is expected to be general for wide-gap semiconductors, rather than being limited tomore » InGaN-based light emitting devices.« less

Self-assembling bubble carriers for oral protein delivery.

PubMed

Chuang, Er-Yuan; Lin, Kun-Ju; Lin, Po-Yen; Chen, Hsin-Lung; Wey, Shiaw-Pyng; Mi, Fwu-Long; Hsiao, Hsu-Chan; Chen, Chiung-Tong; Sung, Hsing-Wen

2015-09-01

Successful oral delivery of therapeutic proteins such as insulin can greatly improve the quality of life of patients. This study develops a bubble carrier system by loading diethylene triamine pentaacetic acid (DTPA) dianhydride, a foaming agent (sodium bicarbonate; SBC), a surfactant (sodium dodecyl sulfate; SDS), and a protein drug (insulin) in an enteric-coated gelatin capsule. Following oral administration to diabetic rats, the intestinal fluid that has passed through the gelatin capsule saturates the mixture; concomitantly, DTPA dianhydride produces an acidic environment, while SBC decomposes to form CO2 bubbles at acidic pH. The gas bubbles grow among the surfactant molecules (SDS) owing to the expansion of the generated CO2. The walls of the CO2 bubbles consist of a self-assembled film of water that is in nanoscale and may serve as a colloidal carrier to transport insulin and DTPA. The grown gas bubbles continue to expand until they bump into the wall and burst, releasing their transported insulin, DTPA, and SDS into the mucosal layer. The released DTPA and SDS function as protease inhibitors to protect the insulin molecules as well as absorption enhancers to augment their epithelial permeability and eventual absorption into systemic circulation, exerting their hypoglycemic effects. Copyright © 2015 Elsevier Ltd. All rights reserved.

Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohan, Nagaboopathy; Raghavan, Srinivasan; Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012

2015-10-07

AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed atmore » an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.« less