Ta2O5 Polycrystalline Silicon Capacitors with CF4 Plasma Treatment

NASA Astrophysics Data System (ADS)

Kao, Chyuan-Haur; Chen, Hsiang

2012-04-01

In this research, the effects of CF4 plasma treatment with post annealing on the electrical characteristics and material properties of Ta2O5 dielectrics were determined. The dielectric performance characteristics of samples under different treatment conditions were measured using equivalent oxide thickness (EOT), current density-electric field (J-E) characteristics, gate voltage shift versus time, and Weibull plots. In addition, X-ray diffraction (XRD) analysis provided insight into the changes in crystalline structure, atomic force microscopy (AFM) measurements visualized the surface roughness, and secondary ion mass spectroscopy (SIMS) revealed the distribution of fluorine ions inside the dielectric samples. Findings indicate that dielectric performance can be significantly improved by CF4 plasma treatment for 1 min with post annealing at 800 °C. The improvements in electrical characteristics were caused by the appropriate incorporation of the fluorine atoms and the removal of the dangling bonds and traps. The Ta2O5 dielectric incorporated with appropriate CF4 plasma and annealing treatments shows great promise for future generation of nonvolatile memory applications.

Effects of O 2 and N 2/H 2 plasma treatments on the neuronal cell growth on single-walled carbon nanotube paper scaffolds

NASA Astrophysics Data System (ADS)

Yoon, Ok Ja; Lee, Hyun Jung; Jang, Yeong Mi; Kim, Hyun Woo; Lee, Won Bok; Kim, Sung Su; Lee, Nae-Eung

2011-08-01

The O 2 and N 2/H 2 plasma treatments of single-walled carbon nanotube (SWCNT) papers as scaffolds for enhanced neuronal cell growth were conducted to functionalize their surfaces with different functional groups and to roughen their surfaces. To evaluate the effects of the surface roughness and functionalization modifications of the SWCNT papers, we investigated the neuronal morphology, mitochondrial membrane potential, and acetylcholine/acetylcholinesterase levels of human neuroblastoma during SH-SY5Y cell growth on the treated SWCNT papers. Our results demonstrated that the plasma-chemical functionalization caused changes in the surface charge states with functional groups with negative and positive charges and then the increased surface roughness enhanced neuronal cell adhesion, mitochondrial membrane potential, and the level of neurotransmitter in vitro. The cell adhesion and mitochondrial membrane potential on the negatively charged SWCNT papers were improved more than on the positively charged SWCNT papers. Also, measurements of the neurotransmitter level showed an enhanced acetylcholine level on the negatively charged SWCNT papers compared to the positively charged SWCNT papers.

Cathodic cage plasma deposition of TiN and TiO{sub 2} thin films on silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sousa, Romulo R. M. de; Sato, Patricia S.; Nascente, Pedro A. P., E-mail: nascente@ufscar.br

2015-07-15

Cathodic cage plasma deposition (CCPD) was used for growing titanium nitride (TiN) and titanium dioxide (TiO{sub 2}) thin films on silicon substrates. The main advantages of the CCPD technique are the uniformity, tridimensionality, and high rate of the film deposition that occurs at higher pressures, lower temperatures, and lower treatment times than those used in conventional nitriding treatments. In this work, the influence of the temperature and gas atmosphere upon the characteristics of the deposited films was investigated. The TiN and TiO{sub 2} thin films were characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy to analyze their chemical,more » structural, and morphological characteristics, and the combination of these results indicates that the low-cost CCPD technique can be used to produce even and highly crystalline TiN and TiO{sub 2} films.« less

Indium doped ZnO nano-powders prepared by RF thermal plasma treatment of In2O3 and ZnO

NASA Astrophysics Data System (ADS)

Lee, Mi-Yeon; Song, Min-Kyung; Seo, Jun-Ho; Kim, Min-Ho

2015-06-01

Indium doped ZnO nano-powders were synthesized by the RF thermal plasma treatment of In2O3 and ZnO. For this purpose, micron-sized ZnO powder was mixed with In2O3 powder at the In/Zn ratios of 0.0, 1.2, and 2.4 at. % by ball milling for 1 h, after which the mixtures were injected into RF thermal plasma generated at the plate power level of ˜140 kV A. As observed from the field emission scanning electron microscopy (FE-SEM) images of the RF plasma-treated powders, hexagonal prism-shaped nano-crystals were mainly obtained along with multi-pod type nano-particles, where the number of multi-pods decreased with increasing In/Zn ratios. In addition, the X-ray diffraction (XRD) data for the as-treated nano-powders showed the diffraction peaks for the In2O3 present in the precursor mixture to disappear, while the crystalline peaks for the single phase of ZnO structure shifted toward lower Bragg angles. In the UV-vis absorption spectra of the as-treated powders, redshifts were also observed with increases of the In/Zn ratios. Together with the FE-SEM images and the XRD data, the redshifts were indicative of the doping process of ZnO with indium, which took place during the RF thermal plasma treatment of In2O3 and ZnO.

Isotopic Monitoring of N2O Emissions from Wastewater Treatment: Evidence for N2O Production Associated with Anammox Metabolism?

NASA Astrophysics Data System (ADS)

Harris, E. J.; Wunderlin, P.; Joss, A.; Emmenegger, L.; Kipf, M.; Wolf, B.; Mohn, J.

2015-12-01

Microbial production is the major source of N2O, the strongest greenhouse gas produced within the nitrogen cycle, and the most important stratospheric ozone destructant released in the 21st century. Wastewater treatment is an important and growing source of N2O, with best estimates predicting N2O emissions from this sector will have increased by >25% by 2020. Novel treatment employing partial nitritation-anammox, rather than traditional nitrification-denitrification, has the potential to achieve a neutral carbon footprint due to increased biogas production - if N2O production accounts for <0.5-1% of total nitrogen turnover. As a further motivation for this research, microbial pathways identified from wastewater treatment can be applied to our understanding of N cycling in the natural environment. This study presents the first online isotopic measurements of offgas N2O from a partial-nitritation anammox reactor 1. The measured N2O isotopic composition - in particular the N2O isotopic site preference (SP = δ15Nα - δ15Nβ) - was used to understand N2O production pathways in the reactor. When N2O emissions peaked due to high dissolved oxygen concentrations, low SP showed that N2O was produced primarily via nitrifier denitrification by ammonia oxidizing bacteria (AOBs). N2O production by AOBs via NH2OH oxidation, in contrast, did not appear to be important under any conditions. Over the majority of the one-month measurement period, the measured SP was much higher than expected following our current understanding of N2O production pathways 2. SP reached 41‰ during normal operating conditions and achieved a maximum of 45‰ when nitrite was added under anoxic conditions. These results could be explained by unexpectedly strong heterotrophic N2O reduction despite low dissolved organic matter concentrations, or by an incomplete understanding of isotopic fractionation during N2O production from NH2OH oxidation by AOBs - however the explanation most consistent with all

Increased plasma O2 solubility improves O2 uptake of in situ dog muscle working maximally.

PubMed

Hogan, M C; Willford, D C; Keipert, P E; Faithfull, N S; Wagner, P D

1992-12-01

A perfluorocarbon emulsion [formulation containing 90% wt/vol perflubron (perfluorooctylbromide); Alliance Pharmaceutical] was used to increase O2 solubility in the plasma compartment during hyperoxic low hemoglobin concentration ([Hb]) perfusion of a maximally working dog muscle in situ. Our hypothesis was that the increased plasma O2 solubility would increase the muscle O2 diffusing capacity (DO2) by augmenting the capillary surface area in contact with high [O2]. Oxygen uptake (VO2) was measured in isolated in situ canine gastrocnemius (n = 4) while working for 6 min at a maximal stimulation rate of 1 Hz (isometric tetanic contractions) on three to four separate occasions for each muscle. On each occasion, the last 4 min of the 6-min work period was split into 2 min of a control treatment (only emulsifying agent mixed into blood) and 2 min of perflubron treatment (6 g/kg body wt), reversing the order for each subsequent work bout. Before contractions, the [Hb] of the dog was decreased to 8-9 g/100 ml and arterial PO2 was increased to 500-600 Torr by having the dog breathe 100% O2 to maximize the effect of the perflubron. Muscle blood flow was held constant between the two experimental conditions. Plasma O2 solubility was almost doubled to 0.005 ml O2 x 100 ml blood-1 x Torr-1 by the addition of the perflubron. Muscle O2 delivery and maximal VO2 were significantly improved (at the same blood flow and [Hb]) by 11 and 12.6%, respectively (P < 0.05), during the perflubron treatment compared with the control. O2 extraction by the muscle remained the same between the two treatments, as did the estimate of DO2.(ABSTRACT TRUNCATED AT 250 WORDS)

Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jae-Sung; Xing Piao, Ming; Jang, Ho-Kyun

2014-03-21

Various plasma treatment effects such as oxygen (O{sub 2}), nitrogen (N{sub 2}), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O{sub 2} and N{sub 2} plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring trapsmore » on the surface and bulk channel are presented.« less

Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

NASA Astrophysics Data System (ADS)

Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

2017-02-01

This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm-2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

Three-dimensional reduced-graphene/MnO2 prepared by plasma treatment as high-performance supercapacitor electrodes

NASA Astrophysics Data System (ADS)

Liu, Runru; Wen, Dongdong; Zhang, Xueyu; Wang, Dejun; Yang, Qiang; Yuan, Beilei; Lü, Wei

2018-06-01

In this work, three-Dimensional nitrogen-doped graphene/MnO2 (NG/MnO2) was prepared by plasma treatment, which provides a high specific surface area due to porous structure and exhibits enhanced supercapacitor performance. The advantage of NG/MnO2 electrode was obvious compared with reduced graphene oxide/MnO2 (RGO/MnO2) which was prepared by traditional hydrothermal method, such as improved electrochemical property and better cycling stability. The specific capacitance of NG/MnO2 at the scan rate of 5 mV s‑1 (393 F g‑1) is higher than that of RGO/MnO2 (260 F g‑1). In addition, NG/MnO2 showed higher durability with 90.2% capacitance retention than that of RGO/MnO2 (82%) after 5000 cycles. Such cheap and high-performance supercapacitor electrodes are available by our feasible plasma treatment, which give promise in large-scale commercial energy storage devices.

Leachate treatment in landfills is a significant N2O source.

PubMed

Wang, Xiaojun; Jia, Mingsheng; Zhang, Chengliang; Chen, Shaohua; Cai, Zucong

2017-10-15

The importance of methane (CH 4 ) emissions from landfills has been extensively documented, while the nitrous oxide (N 2 O) emissions from landfills are considered negligible. In this study, three landfills were selected to measure CH 4 and N 2 O emissions using the static chamber method. Dongbu (DB) and Dongfu (DF) landfills, both located in Xiamen city, Fujian Province, were classified as sanitary. The former started to receive solid waste from Xiamen city in 2009, and the latter was closed in 2009. Nanjing (NJ) landfill, located in Nanjing county, Fujian Province, was classified as managed. Results showed that for the landfill reservoirs, CH 4 emissions were significant, while N 2 O emissions occurred mainly in operating areas (on average, 16.3 and 19.0mgN 2 Om -2 h -1 for DB and NJ landfills, respectively) and made a negligible contribution to the total greenhouse gas emissions in term of CO 2 equivalent. However, significant N 2 O emissions were observed in the leachate treatment systems of sanitary landfills and contributed 72.8% and 45.6% of total emissions in term of CO 2 equivalent in DB and DF landfills, respectively. The N 2 O emission factor (EF) of the leachate treatment systems was in the range of 8.9-11.9% of the removed nitrogen. The total N 2 O emissions from the leachate treatment systems of landfills in Xiamen city were estimated to be as high as 8.55gN 2 O-Ncapita -1 yr -1 . These results indicated that N 2 O emissions from leachate treatment systems of sanitary landfills were not negligible and should be included in national and/or local inventories of greenhouse gas emissions. Copyright © 2017 Elsevier B.V. All rights reserved.

Collision cross sections and transport coefficients of O-, O2 -, O3 - and O4 - negative ions in O2, N2 and dry air for non-thermal plasmas modelling

NASA Astrophysics Data System (ADS)

Hennad, Ali; Yousfi, Mohammed

2018-02-01

The ions interaction data such as interaction potential parameters, elastic and inelastic collision cross sections and the transport coefficients (reduced mobility and diffusion coefficients) have been determined and analyzed in the case of the main negative oxygen ions (O-, O2 -, O3 - and O4 -) present in low temperature plasma at atmospheric pressure when colliding O2, N2 and dry air. The ion transport has been determined from an optimized Monte Carlo simulation using calculated elastic and experimentally fitted inelastic collision cross sections. The elastic momentum transfer collision cross sections have been calculated from a semi-classical JWKB approximation based on a ( n-4) rigid core interaction potential model. The cross sections sets involving elastic and inelastic processes were then validated using measured reduced mobility data and also diffusion coefficient whenever available in the literature. From the sets of elastic and inelastic collision cross sections thus obtained for the first time for O3-/O2, O2 -/N2, O3 -/N2, and O4 -/N2 systems, the ion transport coefficients were calculated in pure gases and dry air over a wide range of the density reduced electric field E/N.

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation

NASA Astrophysics Data System (ADS)

Bae, Choelhwyi; Lucovsky, Gerald

2004-11-01

Low-temperature remote plasma-assisted oxidation and nitridation processes for interface formation and passivation have been extended from Si and SiC to GaN. The initial oxidation kinetics and chemical composition of thin interfacial oxide were determined from analysis of on-line Auger electron spectroscopy features associated with Ga, N, and O. The plasma-assisted oxidation process is self-limiting with power-law kinetics similar to those for the plasma-assisted oxidation of Si and SiC. Oxidation using O2/He plasma forms nearly pure GaOx, and oxidation using 1% N2O in N2 forms GaOxNy with small nitrogen content, ~4-7 at. %. The interface and dielectric layer quality was investigated using fabricated GaN metal-oxide-semiconductor capacitors. The lowest density of interface states was achieved with a two-step plasma-assisted oxidation and nitridation process before SiO2 deposition.

Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment.

PubMed

Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

2018-06-15

An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (10 19 cm -3 ) are distributed in the initial state, which exist in the forms of Si 2 N≡Si·, SiO 2 ≡Si·, O 3 ≡Si·, and N 3 ≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H + and O 2- . Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment

NASA Astrophysics Data System (ADS)

Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

2018-06-01

An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (1019 cm‑3) are distributed in the initial state, which exist in the forms of Si2N≡Si·, SiO2≡Si·, O3≡Si·, and N3≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H+ and O2‑. Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

Improvement of ITO properties in green-light-emitting devices by using N2:O2 plasma treatment

NASA Astrophysics Data System (ADS)

Jeon, Hyeonseong; Kang, Seongjong; Oh, Hwansool

2016-01-01

Plasma treatment reduces the roughness of the indium-tin-oxide (ITO) interface in organic light emitting diodes (OLEDs). Oxygen gas is typically used in the plasma treatment of conventional OLED devices. However, in this study, nitrogen and oxygen gases were used for surface treatment to improve the properties of ITO. To investigate the improvements resulting from the use of nitrogen and oxygen plasma treatment, fabricated green OLED devices. The device's structure was ITO (600 Å) / α-NPD (500 Å) / Alq3:NKX1595 (400 Å:20 Å,5%) / LiF / Al:Li (10 Å:1000 Å). The plasma treatment was performed in a capacitive coupled plasma (CCP) type plasma treatment chamber similar to that used in the traditional oxygen plasma treatment. The results of this study show that the combined nitrogen/oxygen plasma treatment increases the lifetime, current density, and brightness of the fabricated OLED while decreasing the operating voltage relative to those of OLEDs fabricated using oxygen plasma treatment.

Low-k SiOCH Film Etching Process and Its Diagnostics Employing Ar/C5F10O/N2 Plasma

NASA Astrophysics Data System (ADS)

Nagai, Mikio; Hayashi, Takayuki; Hori, Masaru; Okamoto, Hidekazu

2006-09-01

We proposed an environmental harmonic etching gas of C5F10O (CF3CF2CF2OCFCF2), and demonstrated the etching of low-k SiOCH films employing a dual-frequency capacitively coupled etching system. Dissociative ionization cross sections for the electron impact ionizations of C5F10O and c-C4F8 gases have been measured by quadrupole mass spectroscopy (QMS). The dissociative ionization cross section of CF3+ from C5F10O gas was much higher than those of other ionic species, and 10 times higher than that of CF3+ from C4F8 gas. CF3+ is effective for increasing the etching rate of SiO2. As a result, the etching rate of SiOCH films using Ar/C5F10O/N2 plasma was about 1000 nm/min, which is much higher than that using Ar/C4F8/N2 plasma. The behaviours of fluorocarbon radicals in Ar/C5F10O/N2 plasma, which were measured by infrared diode laser absorption spectroscopy, were similar to those in Ar/C4F8/N2 plasma. The densities of CF and CF3 radicals were markedly decreased with increasing N2 flow rate. Etching rate was controlled by N2 flow rate. A vertical profile of SiOCH with a high etching rate and less microloading was realized using Ar/C5F10O/N2 plasma chemistry.

Influence of Ar/O2/H2O Feed Gas and N2/O2/H2O Environment on the Interaction of Time Modulated MHz Atmospheric Pressure Plasma Jet (APPJ) with Model Polymers

NASA Astrophysics Data System (ADS)

Oehrlein, Gottlieb; Luan, Pingshan; Knoll, Andrew; Kondeti, Santosh; Bruggeman, Peter

2016-09-01

An Ar/O2/H2O fed time modulated MHz atmospheric pressure plasma jet (APPJ) in a sealed chamber was used to study plasma interaction with model polymers (polystyrene, poly-methyl methacrylate, etc.). The amount of H2O in the feed gas and/or present in the N2, O2, or N2/O2 environment was controlled. Short lived species such as O atoms and OH radicals play a crucial role in polymer etching and surface modifications (obtained from X-ray photoelectron spectroscopy of treated polymers without additional atmospheric exposure). Polymer etching depth for Ar/air fed APPJ mirrors the decay of gas phase O atoms with distance from the APPJ nozzle in air and is consistent with the estimated O atom flux at the polymer surface. Furthermore, whereas separate O2 or H2O admixture to Ar enhances polymer etching, simultaneous addition of O2 and H2O to Ar quenches polymer etching. This can be explained by the mutual quenching of O with OH, H and HO2 in the gas phase. Results where O2 and/or H2O in the environment were varied are consistent with these mechanisms. All results will be compared with measured and simulated species densities reported in the literature. We gratefully acknowledge funding from US Department of Energy (DE-SC0001939) and National Science Foundation (PHY-1415353).

Tribological Behavior of Plasma-Sprayed Al2O3-20 wt.%TiO2 Coating

NASA Astrophysics Data System (ADS)

Cui, Shiyu; Miao, Qiang; Liang, Wenping; Zhang, Zhigang; Xu, Yi; Ren, Beilei

2017-05-01

Al2O3-20 wt.% TiO2 ceramic coatings were deposited on the surface of Grade D steel by plasma spraying of commercially available powders. The phases and the microstructures of the coatings were investigated by x-ray diffraction and scanning electron microscopy, respectively. The Al2O3-20 wt.% TiO2 composite coating exhibited a typical inter-lamellar structure consisting of the γ-Al2O3 and the Al2TiO5 phases. The dry sliding wear behavior of the coating was examined at 20 °C using a ball-on-disk wear tester. The plasma-sprayed coating showed a low wear rate ( 4.5 × 10-6 mm3 N-1 m-1), which was <2% of that of the matrix ( 283.3 × 10-6 mm3 N-1 m-1), under a load of 15 N. In addition, the tribological behavior of the plasma-sprayed coating was analyzed by examining the microstructure after the wear tests. It was found that delamination of the Al2TiO5 phase was the main cause of the wear during the sliding wear tests. A suitable model was used to simulate the wear mechanism of the coating.

Plasma-assisted adsorption of elemental mercury on CeO2/TiO2 at low temperatures

NASA Astrophysics Data System (ADS)

Liu, Lu; Zheng, Chenghang; Gao, Xiang

2017-11-01

Mercury is a kind of pollutants contained in flue gas which is hazardous for human beings. In this work, CeO2 was packed in the discharge zone of a plasma reactor to adsorb elemental mercury at low temperatures. Plasma-catalyst reactor can remove Hg0 efficiently with CeO2/TiO2 catalysts packed in the discharge zone. The Hg0 concentration continued to decrease gradually when the plasma was turned on, but not sank rapidly. This tendency was different with other catalysts. The treatment of plasma to CeO2/TiO2 catalysts has a promotion effect on the adsorption of Hg0. Plasma has the effect of changing the surface properties of the catalysts and the changes would restitute if the condition changed. The long-running test demonstrated that this method is an effective way to remove Hg0. The removal efficiency remained at above 99% throughout 12 hours when plasma had been turned on (15kV, 0.5 g packed CeO2/TiO2).

Superhydrophobic nanostructured Kapton® surfaces fabricated through Ar + O2 plasma treatment: Effects of different environments on wetting behaviour

NASA Astrophysics Data System (ADS)

Barshilia, Harish C.; Ananth, A.; Gupta, Nitant; Anandan, C.

2013-03-01

Kapton® [poly (4,4'-oxy diphenylene pyromellitimide)] polyimides have widespread usage in semiconductor devices, solar arrays, protective coatings and space applications, due to their excellent chemical and physical properties. In addition to their inherent properties, imparting superhydrophobicity on these surfaces will be an added advantage. Present work describes the usage of Ar + O2 plasma treatment for the preparation of superhydrophobic Kapton® surfaces. Immediately after the plasma treatment, the surfaces showed superhydrophilicity as a result of high energy dangling bonds and polar group concentration. But the samples kept in low vacuum for 48 h exhibited superhydrophobicity with high water contact angles (>150°). It is found that the post plasma treatment process, called ageing, especially in low vacuum plays an important role in delivering superhydrophobic property to Kapton®. Field emission scanning electron microscopy and atomic force microscopy were used to probe the physical changes in the surface of the Kapton®. The surfaces showed formation of nano-feathers and nano-tussock microstructures with variation in surface roughness against plasma treatment time. A thorough chemical investigation was performed using Fourier transform infrared spectroscopy and micro-Raman spectroscopy, which revealed changes in the surface of the Ar + O2 plasma treated Kapton®. Surface chemical species of Kapton® were confirmed again by X-ray photoelectron spectroscopy spectra for untreated surfaces whereas Ar + O2 plasma treated samples showed the de-bonding and re-organization of structural elements. Creation of surface roughness plays a dominant role in the contribution of superhydrophobicity to Kapton® apart from the surface modifications due to Ar + O2 plasma treatment and ageing in low vacuum.

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.

PubMed

Jeong, Yesul; Pearson, Christopher; Kim, Hyun-Gwan; Park, Man-Young; Kim, Hongdoo; Do, Lee-Mi; Petty, Michael C

2016-01-27

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10(-7) A/cm(2)) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm(2)/(V s), an on/off ratio of ∼10(7), a threshold voltage of -1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm(2)/(V s) and on/off ratio of ∼10(7).

Removal of NO in NO/N2, NO/N2/O2, NO/CH4/N2, and NO/CH4/O2/N2 systems by flowing microwave discharges.

PubMed

Hueso, José L; Gonzalez-Elipe, Agustín R; Cotrino, José; Caballero, Alfonso

2007-02-15

In this paper, continuing previous work, we report on experiments carried out to investigate the removal of NO from simulated flue gas in nonthermal plasmas. The plasma-induced decomposition of small concentrations of NO in N2 used as the carrier gas and O2 and CH4 as minority components has been studied in a surface wave discharge induced with a surfatron launcher. The reaction products and efficiency have been monitored by mass spectrometry as a function of the composition of the mixture. NO is effectively decomposed into N2 and O2 even in the presence of O2, provided always that enough CH4 is also present in the mixture. Other majority products of the plasma reactions under these conditions are NH3, CO, and H2. In the absence of O2, decomposition of NO also occurs, although in that case HCN accompanies the other reaction products as a majority component. The plasma for the different reaction mixtures has been characterized by optical emission spectroscopy. Intermediate excited species of NO*, C*, CN*, NH*, and CH* have been monitored depending on the gas mixture. The type of species detected and their evolution with the gas composition are in agreement with the reaction products detected in each case. The observations by mass spectrometry and optical emission spectroscopy are in agreement with the kinetic reaction models available in literature for simple plasma reactions in simple reaction mixtures.

An Alternative to Annealing TiO2 Nanotubes for Morphology Preservation: Atmospheric Pressure Plasma Jet Treatment.

PubMed

Seo, Sang-Hee; Uhm, Soo-Hyuk; Kwon, Jae-Sung; Choi, Eun Ha; Kim, Kwang-Mahn; Kim, Kyoung-Nam

2015-03-01

Titanium oxide nanotube layer formed by plasma electrolytic oxidation (PEO) is known to be excellent in biomaterial applications. However, the annealing process which is commonly performed on the TiO2 nanotubes cause defects in the nanotubular structure. The purpose of this work was to apply a non-thermal atmospheric pressure plasma jet on diameter-controlled TiO2 nanotubes to mimic the effects of annealing while maintaining the tubular structure for use as biomaterial. Diameter-controlled nanotube samples fabricated by plasma electrolytic oxidation were dried and prepared under three different conditions: untreated, annealed at 450 °C for 1 h in air with a heating rate of 10 °C/min, and treated with an air-based non-thermal atmospheric pressure plasma jet for 5 minutes. The contact angle measurement was investigated to confirm the enhanced hydrophilicity of the TiO2 nanotubes. The chemical composition of the surface was studied using X-ray photoelectron spectroscopy, and the morphology of TiO2 nanotubes was examined by field emission scanning electron microscopy. For the viability of the cell, the attachment of the osteoblastic cell line MC3T3-E1 was determined using the water-soluble tetrazolium salt assay. We found that there are no morphological changes in the TiO2 nanotubular structure after the plasma treatment. Also, we investigated a change in the chemical composition and enhanced hydrophilicity which result in improved cell behavior. The results of this study indicated that the non-thermal atmospheric pressure plasma jet results in osteoblast functionality that is comparable to annealed samples while maintaining the tubular structure of the TiO2 nanotubes. Therefore, this study concluded that the use of a non-thermal atmospheric pressure plasma jet on nanotube surfaces may replace the annealing process following plasma electrolytic oxidation.

Effects of Atmospheric-Pressure N2, He, Air, and O2 Microplasmas on Mung Bean Seed Germination and Seedling Growth

NASA Astrophysics Data System (ADS)

Zhou, Renwu; Zhou, Rusen; Zhang, Xianhui; Zhuang, Jinxing; Yang, Size; Bazaka, Kateryna; (Ken) Ostrikov, Kostya

2016-09-01

Atmospheric-pressure N2, He, air, and O2 microplasma arrays have been used to investigate the effects of plasma treatment on seed germination and seedling growth of mung bean in aqueous solution. Seed germination and growth of mung bean were found to strongly depend on the feed gases used to generate plasma and plasma treatment time. Compared to the treatment with atmospheric-pressure O2, N2 and He microplasma arrays, treatment with air microplasma arrays was shown to be more efficient in improving both the seed germination rate and seedling growth, the effect attributed to solution acidification and interactions with plasma-generated reactive oxygen and nitrogen species. Acidic environment caused by air discharge in water may promote leathering of seed chaps, thus enhancing the germination rate of mung bean, and stimulating the growth of hypocotyl and radicle. The interactions between plasma-generated reactive species, such as hydrogen peroxide (H2O2) and nitrogen compounds, and seeds led to a significant acceleration of seed germination and an increase in seedling length of mung bean. Electrolyte leakage rate of mung bean seeds soaked in solution activated using air microplasma was the lowest, while the catalase activity of thus-treated mung bean seeds was the highest compared to other types of microplasma.

Effects of Atmospheric-Pressure N2, He, Air, and O2 Microplasmas on Mung Bean Seed Germination and Seedling Growth.

PubMed

Zhou, Renwu; Zhou, Rusen; Zhang, Xianhui; Zhuang, Jinxing; Yang, Size; Bazaka, Kateryna; Ken Ostrikov, Kostya

2016-09-01

Atmospheric-pressure N2, He, air, and O2 microplasma arrays have been used to investigate the effects of plasma treatment on seed germination and seedling growth of mung bean in aqueous solution. Seed germination and growth of mung bean were found to strongly depend on the feed gases used to generate plasma and plasma treatment time. Compared to the treatment with atmospheric-pressure O2, N2 and He microplasma arrays, treatment with air microplasma arrays was shown to be more efficient in improving both the seed germination rate and seedling growth, the effect attributed to solution acidification and interactions with plasma-generated reactive oxygen and nitrogen species. Acidic environment caused by air discharge in water may promote leathering of seed chaps, thus enhancing the germination rate of mung bean, and stimulating the growth of hypocotyl and radicle. The interactions between plasma-generated reactive species, such as hydrogen peroxide (H2O2) and nitrogen compounds, and seeds led to a significant acceleration of seed germination and an increase in seedling length of mung bean. Electrolyte leakage rate of mung bean seeds soaked in solution activated using air microplasma was the lowest, while the catalase activity of thus-treated mung bean seeds was the highest compared to other types of microplasma.

Effect of O2 plasma treatment on density-of-states in a-IGZO thin film transistors

NASA Astrophysics Data System (ADS)

Ding, Xingwei; Huang, Fei; Li, Sheng; Zhang, Jianhua; Jiang, Xueyin; Zhang, Zhilin

2017-01-01

This work reports an efficient route for enhancing the performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFT). The mobility was greatly improved by about 38% by means of O2 plasma treatment. Temperature-stress was carried out to investigate the stability and extract the parameters related to activation energy ( E a) and density-of-states (DOS). The DOS was calculated on the basis of the experimentally obtained E a, which can explain the experimental observation. A lower activation energy ( E a, 0.72 eV) and a smaller DOS were obtained in the O2 plasma treatment TFT based on the temperature-dependent transfer curves. The results showed that temperature stability and electrical properties enhancements in a-IGZO thin film transistors were attributed to the smaller DOS. [Figure not available: see fulltext.

Influence of microstructure on hardness of plasma sprayed Al2O3-TiO2-MgO coatings with interface diffusion by heat treatment

NASA Astrophysics Data System (ADS)

Chen, Kunlun; Song, Peng; Li, Chao; Lu, Jiansheng

2017-12-01

The effect of heat treatment on the microstructure and mechanical properties of Al2O3-TiO2 coatings doped with 5 wt% MgO was investigated in this paper. The composite coatings were prepared by atmospheric plasma spraying (APS) and heat treated at 1000 °C for 24 h in Ar. The coatings were analyzed using scanning electron microscopy with electron probe x-ray microanalysis and x-ray diffraction. The hardness was determined using a Vickers hardness test on the as-sprayed coatings and after heat treatment. The results showed that the interface diffusion between the Al-rich and Ti-rich layers resulted in mutual pinning within the coating during the heat treatment. The newly formed MgAl2O4 phase promoted cracking-healing behavior within the coating. We conclude that increase of the hardness of the coatings was mainly caused by the mutual pinning interface and crack healing.

Electrical characterization of the flowing afterglow of N{sub 2} and N{sub 2}/O{sub 2} microwave plasmas at reduced pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Afonso Ferreira, J.; Stafford, L., E-mail: luc.stafford@umontreal.ca; Leonelli, R.

2014-04-28

A cylindrical Langmuir probe was used to analyze the spatial distribution of the number density of positive ions and electrons as well as the electron energy distribution function (EEDF) in the flowing afterglow of a 6 Torr N{sub 2} and N{sub 2}/O{sub 2} plasma sustained by a propagating electromagnetic surface wave in the microwave regime. In pure N{sub 2} discharges, ion densities were in the mid 10{sup 14} m{sup −3} in the pink afterglow and in the mid 10{sup 12} m{sup −3} early in the late afterglow. In both pink and late afterglows, the ion population was much higher than the electron population,more » indicating non-macroscopically neutral media. The EEDF was close to a Maxwellian with an electron temperature of 0.5 ± 0.1 eV, except in the pink afterglow where the temperature rose to 1.1 ± 0.2 eV. This latter behavior is ascribed to N{sub 2} vibration-vibration pumping in the pink afterglow that increases the concentration of high N{sub 2} vibrational states and thus rises the electron temperature by vibration-electron collisions. After addition of small amounts of O{sub 2} in the nominally pure N{sub 2} discharge, the charged particles densities and average electron energy first strongly increased and then decreased with increasing O{sub 2} concentration. Based on these data and the evolution of the N{sub 2}{sup +}(B) band emission intensities, it is concluded that a significant change in the positive ion composition of the flowing afterglow occurs, going from N{sub 2}{sup +} in nominally pure N{sub 2} discharges to NO{sup +} after addition of trace amounts of O{sub 2} in N{sub 2}.« less

Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun

2010-07-15

This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fittingmore » the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.« less

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

PubMed Central

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

2018-01-01

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

Reaction pathways in remote plasma nitridation of ultrathin SiO2 films

NASA Astrophysics Data System (ADS)

Niimi, Hiro; Khandelwal, Amit; Lamb, H. Henry; Lucovsky, Gerald

2002-01-01

Low-temperature nitridation of 3 nm SiO2 films using He/N2 and N2 remote radio frequency (rf) plasmas was investigated. On-line Auger electron spectroscopy and angle-resolved x-ray photoelectron spectroscopy (ARXPS) were employed to determine the concentration, spatial distribution, and local chemical bonding of nitrogen in the resultant films. Experiments were performed using a substrate temperature of 300 °C and 30 W rf power. Nitridation using an upstream He/N2 remote plasma at 0.1 Torr incorporates nitrogen at the top surface of the SiO2 film. In contrast, a lower concentration of nitrogen distributed throughout the film is obtained when the process pressure is increased to 0.3 Torr. ARXPS indicates a N-Si3 local bonding configuration, irrespective of the spatial distribution of N atoms. Slightly more nitrogen is incorporated using a downstream He/N2 plasma at each process pressure. By comparison, nitridation of SiO2 films using a N2 remote plasma at 0.1 Torr is very slow. Optical emission spectroscopy indicates that He dilution enhances the generation of N2+(B 2Σu+) species by altering the plasma electron energy distribution and by providing an additional kinetic pathway (Penning ionization). Changing the He/N2 remote plasma configuration from upstream to downstream (at 0.1 and 0.3 Torr) also enhances N2+(B 2Σu+) generation. For upstream He/N2 remote plasmas, the intensity of N2 first positive emission from N2(B 3Πg) states increases with pressure, whereas the N2+ first negative emission from N2+(B 2Σu+) states decreases. We infer from these observations that N2+ species are primarily responsible for top surface nitridation at 0.1 Torr, and that neutral species [N2(A 3Σu+) metastables and N atoms] are associated with sub-surface nitrogen incorporation.

Highly efficient low-temperature plasma-assisted modification of TiO2 nanosheets with exposed {001} facets for enhanced visible-light photocatalytic activity.

PubMed

Li, Beibei; Zhao, Zongbin; Zhou, Quan; Meng, Bo; Meng, Xiangtong; Qiu, Jieshan

2014-11-03

Anatase TiO2 nanosheets with exposed {001} facets have been controllably modified under non-thermal dielectric barrier discharge (DBD) plasma with various working gas, including Ar, H2 , and NH3 . The obtained TiO2 nanosheets possess a unique crystalline core/amorphous shell structure (TiO2 @TiO2-x ), which exhibit the improved visible and near-infrared light absorption. The types of dopants (oxygen vacancy/surface Ti(3+) /substituted N) in oxygen-deficient TiO2 can be tuned by controlling the working gases during plasma discharge. Both surface Ti(3+) and substituted N were doped into the lattice of TiO2 through NH3 plasma discharge, whereas the oxygen vacancy or Ti(3+) (along with the oxygen vacancy) was obtained after Ar or H2 plasma treatment. The TiO2 @TiO2-x from NH3 plasma with a green color shows the highest photocatalytic activity under visible-light irradiation compared with the products from Ar plasma or H2 plasma due to the synergistic effect of reduction and simultaneous nitridation in the NH3 plasma. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental study of the visible-light photocatalytic activity of oxygen-deficient TiO2 prepared with Ar/H2 plasma surface treatment

NASA Astrophysics Data System (ADS)

Nakano, Takuma; Yazawa, Shota; Araki, Shota; Kogoshi, Sumio; Katayama, Noboru; Kudo, Yusuke; Nakanishi, Tetsuya

2015-01-01

Oxygen-deficient TiO2 (TiO2-x) has been proposed as a visible-light-responsive photocatalyst. TiO2-x thin films were prepared by Ar/H2 plasma surface treatment, applying varying levels of microwave input power and processing times. The highest visible light photocatalytic activity was observed when using an input power of 200 W, a plasma processing time of 10 min, and a 1:1 \\text{Ar}:\\text{H}2 ratio, conditions that generate an electron temperature of 5.7(±1.0) eV and an electron density of 8.5 × 1010 cm-3. The maximum formaldehyde (HCHO) removal rate of the TiO2-x film was 2.6 times higher than that obtained from a TiO2-xNx film under the same test conditions.

Highly scaled equivalent oxide thickness of 0.66 nm for TiN/HfO2/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition

NASA Astrophysics Data System (ADS)

Tsai, Ming-Li; Wang, Shin-Yuan; Chien, Chao-Hsin

2017-08-01

Through in situ hydrogen plasma treatment (HPT) and plasma-enhanced atomic-layer-deposited TiN (PEALD-TiN) layer capping, we successfully fabricated TiN/HfO2/GaSb metal-oxide-semiconductor capacitors with an ultrathin equivalent oxide thickness of 0.66 nm and a low density of states of approximately 2 × 1012 cm-2 eV-1 near the valence band edge. After in situ HPT, a native oxide-free surface was obtained through efficient etching. Moreover, the use of the in situ PEALD-TiN layer precluded high-κ dielectric damage that would have been caused by conventional sputtering, thereby yielding a superior high-κ dielectric and low gate leakage current.

Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment.

PubMed

Kim, Kwangeun; Ryu, Jae Ha; Kim, Jisoo; Cho, Sang June; Liu, Dong; Park, Jeongpil; Lee, In-Kyu; Moody, Baxter; Zhou, Weidong; Albrecht, John; Ma, Zhenqiang

2017-05-24

Understanding the band bending at the interface of GaN/dielectric under different surface treatment conditions is critically important for device design, device performance, and device reliability. The effects of ultraviolet/ozone (UV/O 3 ) treatment of the GaN surface on the energy band bending of atomic-layer-deposition (ALD) Al 2 O 3 coated Ga-polar GaN were studied. The UV/O 3 treatment and post-ALD anneal can be used to effectively vary the band bending, the valence band offset, conduction band offset, and the interface dipole at the Al 2 O 3 /GaN interfaces. The UV/O 3 treatment increases the surface energy of the Ga-polar GaN, improves the uniformity of Al 2 O 3 deposition, and changes the amount of trapped charges in the ALD layer. The positively charged surface states formed by the UV/O 3 treatment-induced surface factors externally screen the effect of polarization charges in the GaN, in effect, determining the eventual energy band bending at the Al 2 O 3 /GaN interfaces. An optimal UV/O 3 treatment condition also exists for realizing the "best" interface conditions. The study of UV/O 3 treatment effect on the band alignments at the dielectric/III-nitride interfaces will be valuable for applications of transistors, light-emitting diodes, and photovoltaics.

Characteristics of n-GaN After Cl2/Ar and Cl2/N2 Inductively Coupled Plasma Etching

NASA Astrophysics Data System (ADS)

Han, Yan-Jun; Xue, Song; Guo, Wen-Ping; Sun, Chang-Zheng; Hao, Zhi-Biao; Luo, Yi

2003-10-01

A systematic study on the effect of inductively coupled plasma (ICP) etching on n-type GaN is presented. The optical and electrical properties and surface stoichiometry of n-type GaN are evaluated using room-temperature photoluminescence (PL) and current-voltage (I-V) characteristic measurements, and X-ray photoelectron spectroscopy (XPS), respectively. Investigation of the effect of additive gas (N2 and Ar) and RF power on these characteristics has also been carried out. It is shown that the decrease in the O/Ga ratio after ICP etching can suppress the deterioration of the near-band-edge emission intensity. Furthermore, N vacancy (VN) with a shallow donor nature and Ga vacancy (VGa) with a deep acceptor nature are generated after ICP etching upon the addition of Ar and N2 to Cl2 plasma, respectively. Lower ohmic contact resistance could be obtained when VN or ion-bombardment-induced defect is dominant at the surface. Improved etching conditions have been obtained based on these results.

Characteristics of epoxy resin/SiO2 nanocomposite insulation: effects of plasma surface treatment on the nanoparticles.

PubMed

Yan, Wei; Phung, B T; Han, Zhao Jun; Ostrikov, Kostya

2013-05-01

The present study compares the effects of two different material processing techniques on modifying hydrophilic SiO2 nanoparticles. In one method, the nanoparticles undergo plasma treatment by using a custom-developed atmospheric-pressure non-equilibrium plasma reactor. With the other method, they undergo chemical treatment which grafts silane groups onto their surface and turns them into hydrophobic. The treated nanoparticles are then used to synthesize epoxy resin-based nanocomposites for electrical insulation applications. Their characteristics are investigated and compared with the pure epoxy resin and nanocomposite fabricated with unmodified nanofillers counterparts. The dispersion features of the nanoparticles in the epoxy resin matrix are examined through scanning electron microscopy (SEM) images. All samples show evidence that the agglomerations are smaller than 30 nm in their diameters. This indicates good dispersion uniformity. The Weibull plot of breakdown strength and the recorded partial discharge (PD) events of the epoxy resin/plasma-treated hydrophilic SiO2 nanocomposite (ER/PTI) suggest that the plasma-treated specimen yields higher breakdown strength and lower PD magnitude as compared to the untreated ones. In contrast, surprisingly, lower breakdown strength is found for the nanocomposite made by the chemically treated hydrophobic particles, whereas the PD magnitude and PD numbers remain at a similar level as the plasma-treated ones.

Parametric study of plasma-mediated thermoluminescence produced by Al2O3 sub-micron powders

NASA Astrophysics Data System (ADS)

Morávek, T.; Ambrico, P. F.; Ambrico, M.; Schiavulli, L.; Ráheľ, J.

2017-10-01

Sub-micron Al2O3 powders with a surface activated by dielectric barrier discharge exhibit improved performance in wet deposition of ceramic layers. In addressing the possible mechanisms responsible for the observed improvement, a comprehensive thermoluminescence (TL) study of plasma-activated powders was performed. TL offers the unique possibility of exploring the population of intrinsic electrons/holes in the charge trapping states. This study covers a wide range of experimental conditions affecting the TL of powders: treatment time, plasma working gas composition, change of discharge configuration, step-annealing of powder, exposure to laser irradiation and aging time. Deconvoluted TL spectra were followed for the changes in their relative contributions. The TL spectra of all tested gases (air, Ar, N2 and 5% He in N2) consist of the well-known main dosimetric peak at 450 K and a peak of similar magnitude at higher temperatures, centered between 700 and 800 K depending on the working gas used. N2 plasma treatment gave rise to a new specific TL peak at 510 K, which exhibited several peculiarities. Initial thermal annealing of Al2O3 powders led to its significant amplification (unlike the other peaks); the peak was insensitive to optical bleaching, and it exhibited slow gradual growth during the long-term aging test. Besides its relevance to the ceramic processing studies, a comprehensive set of data is presented that provides a useful and unconventional view on plasma-mediated material changes.

Nitrogen-doping of bulk and nanotubular TiO2 photocatalysts by plasma-assisted atomic layer deposition

NASA Astrophysics Data System (ADS)

Zhang, Yi; Creatore, Mariadriana; Ma, Quan-Bao; El Boukili, Aishah; Gao, Lu; Verheijen, Marcel A.; Verhoeven, M. W. G. M. (Tiny); Hensen, Emiel. J. M.

2015-03-01

Plasma-assisted atomic layer deposition (PA-ALD) was adopted to deposit TiO2-xNx ultrathin layers on Si wafers, calcined Ti foils and nanotubular TiO2 arrays. A range of N content and chemical bond configurations were obtained by varying the background gas (O2 or N2) during the Ti precursor exposure, while the N2/H2-fed inductively coupled plasma exposure time was varied between 2 and 20 s. On calcined Ti foils, a positive effect from N doping on photocurrent density was observed when O2 was the background gas with a short plasma exposure time (5 and 10 s). This correlates with the presence of interstitial N states in the TiO2 with a binding energy of 400 eV (Ninterst) as measured by X-ray photoelectron spectroscopy. A longer plasma time or the use of N2 as background gas results in formation of N state with a binding energy of 396 eV (Nsubst) and very low photocurrents. These Nsubst are linked to the presence of Ti3+, which act as detrimental recombination center for photo-generated electron-hole pairs. On contrary, PA-ALD treated nanotubular TiO2 arrays show no variation of photocurrent density (with respect to the pristine nanotubes) upon different plasma exposure times and when the O2 recipe was adopted. This is attributed to constant N content in the PA-ALD TiO2-xNx, regardless of the adopted recipe.

Enhanced Chemisorption of Cu(hfac)2 on Parylene Surface by N2 Plasma Treatment

NASA Astrophysics Data System (ADS)

Pimanpang, S.; Wang, P.-I.; Ye, D.-X.; Juneja, J. S.; Wang, G.-C.; Lu, T.-M.

2006-03-01

The metallization of polymers has been intensively studied due to its wide industrial applications. We report a study of interfacial interaction of metalorganic Cu(hfac)2 with the Parylene surface. Parylene is a low k dielectric polymer prepared by a chemical vapor deposition technique. The as-deposited Parylene surface is shown to be hydrophobic with a measured water droplet contact angle ˜72 . However, after the N2 plasma treatment, the water droplet contact angle decreases to ˜40 due to the formation of oxygen and nitrogen functional groups on the surface, as observed by x-ray photoelectron spectroscopy (XPS). These functional groups improve Cu(hfac)2 chemisorption on the plasma treated Parylene surface. Further studies by XPS show that chemisorption of Cu(hfac)2 is self-limiting up to 20 sec of Cu(hfac)2 precursor exposure time. The enhancement of chemisorption of metalorganic precursors on the polymer surface is an important step for chemical vapor deposition or atomic layer deposition of metal. ^a Supported by Thai govt. fellowship (SP) and SRC (JSJ).

Antifouling enhancement of polysulfone/TiO2 nanocomposite separation membrane by plasma etching

NASA Astrophysics Data System (ADS)

Chen, Z.; Yin, C.; Wang, S.; Ito, K.; Fu, Q. M.; Deng, Q. R.; Fu, P.; Lin, Z. D.; Zhang, Y.

2017-01-01

A polysulfone/TiO2 nanocomposite membrane was prepared via casting method, followed by the plasma etching of the membrane surface. Doppler broadened energy spectra vs. positron incident energy were employed to elucidate depth profiles of the nanostructure for the as-prepared and treated membranes. The results confirmed that the near-surface of the membrane was modified by the plasma treatment. The antifouling characteristics for the membranes, evaluated using the degradation of Rhodamin B, indicated that the plasma treatment enhances the photo catalytic ability of the membrane, suggesting that more TiO2 nanoparticles are exposed at the membrane surface after the plasma treatment as supported by the positron result.

Hydrogen incorporation by plasma treatment gives mesoporous black TiO 2 thin films with visible photoelectrochemical water oxidation activity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Islam, Syed Z.; Reed, Allen; Nagpure, Suraj

In this work, we use neutron reflectometry (NR) to investigate the roles of hydrogen in plasma treated hydrogen doped mesoporous black titania thin films in their visible light absorption and enhanced photoactivity for water oxidation. The cubic ordered mesoporous TiO 2 thin films are prepared by a surfactant-templated sol-gel method and are treated with hydrogen plasma, an approach hypothesized to capitalize on the high degree of disorder in the material and the high energy of the plasma species to achieve efficient hydrogen doping. UV-vis absorbance spectra indicate that H 2 plasma treatment makes TiO 2 films black, with broad-spectrum enhancementmore » of visible light absorption, and XPS analysis shows peak for Ti 3+ state in treated films. The presence of hydrogen in black mesoporous titania (H-TiO 2) films is confirmed by the scattering length density (SLD) profiles obtained from neutron reflectometry measurements. The H-TiO 2 shows ca. 28 times and 8 times higher photocurrent for photoelectrochemical water oxidation compared to undoped TiO 2 films under UV (365 nm) and blue (455 nm) LED irradiation, respectively. These findings provide the first direct evidence that the dramatic change in visible light absorbance of H-treated black TiO 2 is accompanied by significant hydrogen uptake and not just Ti 3+ generation or surface disordering.« less

Hydrogen incorporation by plasma treatment gives mesoporous black TiO 2 thin films with visible photoelectrochemical water oxidation activity

DOE PAGES

Islam, Syed Z.; Reed, Allen; Nagpure, Suraj; ...

2017-10-26

In this work, we use neutron reflectometry (NR) to investigate the roles of hydrogen in plasma treated hydrogen doped mesoporous black titania thin films in their visible light absorption and enhanced photoactivity for water oxidation. The cubic ordered mesoporous TiO 2 thin films are prepared by a surfactant-templated sol-gel method and are treated with hydrogen plasma, an approach hypothesized to capitalize on the high degree of disorder in the material and the high energy of the plasma species to achieve efficient hydrogen doping. UV-vis absorbance spectra indicate that H 2 plasma treatment makes TiO 2 films black, with broad-spectrum enhancementmore » of visible light absorption, and XPS analysis shows peak for Ti 3+ state in treated films. The presence of hydrogen in black mesoporous titania (H-TiO 2) films is confirmed by the scattering length density (SLD) profiles obtained from neutron reflectometry measurements. The H-TiO 2 shows ca. 28 times and 8 times higher photocurrent for photoelectrochemical water oxidation compared to undoped TiO 2 films under UV (365 nm) and blue (455 nm) LED irradiation, respectively. These findings provide the first direct evidence that the dramatic change in visible light absorbance of H-treated black TiO 2 is accompanied by significant hydrogen uptake and not just Ti 3+ generation or surface disordering.« less

Hydrogen incorporation by plasma treatment gives mesoporous black TiO 2 thin films with visible photoelectrochemical water oxidation activity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Islam, Syed Z.; Reed, Allen; Nagpure, Suraj

2018-05-01

In this work, we use neutron reflectometry (NR) to investigate the roles of hydrogen in plasma treated hydrogen doped mesoporous black titania thin films in their visible light absorption and enhanced photoactivity for water oxidation. The cubic ordered mesoporous TiO2 thin films are prepared by a surfactant-templated sol-gel method and are treated with hydrogen plasma, an approach hypothesized to capitalize on the high degree of disorder in the material and the high energy of the plasma species to achieve efficient hydrogen doping. UV-vis absorbance spectra indicate that H2 plasma treatment makes TiO2 films black, with broad-spectrum enhancement of visible lightmore » absorption, and XPS analysis shows peak for Ti3+ state in treated films. The presence of hydrogen in black mesoporous titania (H-TiO2) films is confirmed by the scattering length density (SLD) profiles obtained from neutron reflectometry measurements. The H-TiO2 shows ca. 28 times and 8 times higher photocurrent for photoelectrochemical water oxidation compared to undoped TiO2 films under UV (365 nm) and blue (455 nm) LED irradiation, respectively. These findings provide the first direct evidence that the dramatic change in visible light absorbance of H-treated black TiO2 is accompanied by significant hydrogen uptake and not just Ti3+ generation or surface disordering.« less

Manganese-cerium oxide catalysts prepared by non-thermal plasma for NO oxidation: Effect of O2 in discharge atmosphere

NASA Astrophysics Data System (ADS)

Liu, Lu; Zheng, Chenghang; Wu, Shenghao; Gao, Xiang; Ni, Mingjiang; Cen, Kefa

2017-09-01

Non-thermal plasma with different O2 concentration in discharge atmosphere was applied to synthesize manganese and cerium mixed-oxides catalysts, which were compared in NO oxidation activity. Discharge atmosphere displayed a crucial influence on the performance of the catalysts prepared by plasma. Relatively low O2 concentration in discharge atmosphere allows synthesizing manganese-cerium oxides catalysts in a moderate environment and therefore is favorable for better physicochemical properties which lead to superior catalytic behavior. The best catalyst was obtained by treatment with 10% O2/N2 plasma and presented over 80% NO conversion in the temperature range of 275-325 °C, whereas catalyst prepared in pure O2 discharge atmosphere had the same activity with a catalyst prepared by calcinations. A correlation between the surface properties of the plasma prepared catalysts and its catalytic activity in NO oxidation is proposed. The amount of the surface adsorbed oxygen has an obvious linear correlation with the amount of Ce3+, the H2 consumption at low temperatures and the catalytic performance. The superior catalytic performance is mainly attributed to the stronger interaction between manganese oxides and ceria, and the formation of poorly crystallized Mn-O-Ce phase in the catalyst which resulted from the slow decomposition of nitrates and organics during plasma treatment. Catalysts prepared in relatively low O2 concentration have large specific surface area and is abundant in Ce3+ species and active oxygen species. The study suggests that plasma treatment with proper discharge gas components is a promising method to prepare effective manganese- cerium oxides catalyst for NO oxidation.

Spectroscopic studies of MW plasmas containing HMDSO, O2 and N2

NASA Astrophysics Data System (ADS)

Nave, Andy; Roepcke, Juergen; Mitschker, Felix; Awakowicz, Peter

2015-09-01

The deposition of SiOx layers based on organosilicon plasmas is used to implement advantageous mechanical, electrical, and/or optical properties on various substrates. The development of such coating processes resulting in a wide range of chemical and physical film properties, using hexamethyldisiloxane (HMDSO) as a precursor, has been in the center of interest of various studies. In plasma, the dissociation of HMDSO into a large amount of fragments is a complex chemical phenomenon. The monitoring of the precursor and of formed species is very valuable to understand the plasma chemistry. Infrared absorption spectroscopy based on lead salt lasers and EC Quantum Cascade Laser have been used to monitor the concentrations of HMDSO, and of the reaction products CH4, C2H2, C2H4,C2H6, CO, CO2 and CH3 as a function of the HMDSO/O2 mixture ratio, and the power at various pressures in a MW plasma deposition reactor. Optical emission spectroscopy has been applied as complementary diagnostics to evaluate electron density and electron temperature. Supported by the German Research Foundation within SFB-TR24 and SFB-TR87.

Simple O2 plasma-processed V2O5 as an anode buffer layer for high-performance polymer solar cells.

PubMed

Bao, Xichang; Zhu, Qianqian; Wang, Ting; Guo, Jing; Yang, Chunpeng; Yu, Donghong; Wang, Ning; Chen, Weichao; Yang, Renqiang

2015-04-15

A simple O2 plasma processing method for preparation of a vanadium oxide (V2O5) anode buffer layer on indium tin oxide (ITO)-coated glass for polymer solar cells (PSCs) is reported. The V2O5 layer with high transmittance and good electrical and interfacial properties was prepared by spin coating a vanadium(V) triisopropoxide oxide alcohol solution on ITO and then O2 plasma treatment for 10 min [V2O5 (O2 plasma)]. PSCs based on P3HT:PC61BM and PBDTTT-C:PC71BM using V2O5 (O2 plasma) as an anode buffer layer show high power conversion efficiencies (PCEs) of 4.47 and 7.54%, respectively, under the illumination of AM 1.5G (100 mW/cm(2)). Compared to that of the control device with PBDTTT-C:PC71BM as the active layer and PSS (PCE of 6.52%) and thermally annealed V2O5 (PCE of 6.27%) as the anode buffer layer, the PCE was improved by 15.6 and 20.2%, respectively, after the introduction of a V2O5 (O2 plasma) anode buffer layer. The improved PCE is ascribed to the greatly improved fill factor and enhanced short-circuit current density of the devices, which benefited from the change in the work function of V2O5, a surface with many dangling bonds for better interfacial contact, and the excellent charge transport property of the V2O5 (O2 plasma) layer. The results indicate that an O2 plasma-processed V2O5 film is an efficient and economical anode buffer layer for high-performance PSCs. It also provides an attractive choice for low-cost fabrication of organic electronics.

Sterilization of Fusarium oxysporum by treatment of non-thermalequilibrium plasma in nutrient solution

NASA Astrophysics Data System (ADS)

Yasui, Shinji; Seki, Satoshi; Yoshida, Ryohei; Shoji, Kazuhiro; Terazoe, Hitoshi

2016-01-01

Fusarium wilt of spinach due to F. oxysporum infection is one of the most destructive root diseases in hydroponics in factories using the nutrient film technique. We investigated new technologies for the sterilization of microconidia of F. oxysporum by using a non-thermalequilibrium plasma treatment method in nutrient solution. Specifically, we investigated the sterilization capabilities of five types of gas (air, O2, N2, He, and Ar) used for plasma generation. The highest sterilization capability was achieved by using O2 plasma. However, ozone, which causes growth inhibition, was then generated and released into the atmosphere. The sterilization capability was lower when N2 or air plasma was used in the nutrient solution. It was confirmed that sterilization can be achieved by plasma treatment using inert gases that do not generate ozone; therefore, we determined that Ar plasma is the most preferable. In addition, we investigated the sterilization capabilities of other factors associated with Ar plasma generation, without direct plasma treatment. However, none of these other factors, which included Ar bubbling, pH reduction, increased temperature, hydrogen peroxide concentration, and UV radiation, could completely reproduce the results of direct plasma treatment. We assume that radicals such as O or OH may contribute significantly to the sterilization of microconidia of F. oxysporum in a nutrient solution.

Diagnostics of N2 Ar plasma mixture excited in a 13.56 MHz hollow cathode discharge system: application to remote plasma treatment of polyamide surface

NASA Astrophysics Data System (ADS)

Saloum, S.; Naddaf, M.; Alkhaled, B.

2008-02-01

N2-x% Ar plasma gas mixture, generated in a hollow cathode RF discharge system, has been characterized by both optical emission spectroscopy (OES) and double Langmuir probe, as a function of experimental parameters: total pressure (5-33 Pa), and different fractions of argon (7 <= x <= 80), at a constant applied RF power of 300 W. N2 dissociation degree has been investigated qualitatively by both the actinometry method and the ratio I_N/I_{N_2} of the atomic nitrogen line emission intensity at 672.3 nm to the vibrational band (0-0) of the N2 second positive system at 337.1 nm. Both methods showed that the increase in argon fraction enhances the dissociation of N2, with a maximum at x = 50 for the pressure of 5 Pa, although the two methods give two opposite trends as a function of total pressure. Spectroscopic measurements showed that the vibrational temperature of the N2 second positive system increases with both argon fraction and total pressure increase, it lies between 4900 and 12 300 K. Langmuir probe measurements showed that, in the remote zone, the electron temperature falls in the range 1.57-1.75 eV, the N_{2}^{+} density varies between 5 × 109 and 1.4 × 1010 cm-3 and that both the plasma ionization degree and electron temperature increase towards the source. In addition, the process of plasma-polyamide (PA) surface interaction, in the remote plasma zone, has been studied through OES analysis during plasma treatment of PA to monitor the possible emissions due to the polymer etching. An increase in atomic nitrogen line (672.3 nm) intensity is obtained, atomic carbon line (833.52 nm) and the band emission (0-0) from the CN (B 2Σ+-X 2Σ+) violet system were observed. The PA surface modification has been confirmed through the improvement of its hydrophilic character as the water contact angle measured after the plasma treatment significantly decreased.

Synergistic Effect of H2O2 and NO2 in Cell Death Induced by Cold Atmospheric He Plasma

PubMed Central

Girard, Pierre-Marie; Arbabian, Atousa; Fleury, Michel; Bauville, Gérard; Puech, Vincent; Dutreix, Marie; Sousa, João Santos

2016-01-01

Cold atmospheric pressure plasmas (CAPPs) have emerged over the last decade as a new promising therapy to fight cancer. CAPPs’ antitumor activity is primarily due to the delivery of reactive oxygen and nitrogen species (RONS), but the precise determination of the constituents linked to this anticancer process remains to be done. In the present study, using a micro-plasma jet produced in helium (He), we demonstrate that the concentration of H2O2, NO2− and NO3− can fully account for the majority of RONS produced in plasma-activated buffer. The role of these species on the viability of normal and tumour cell lines was investigated. Although the degree of sensitivity to H2O2 is cell-type dependent, we show that H2O2 alone cannot account for the toxicity of He plasma. Indeed, NO2−, but not NO3−, acts in synergy with H2O2 to enhance cell death in normal and tumour cell lines to a level similar to that observed after plasma treatment. Our findings suggest that the efficiency of plasma treatment strongly depends on the combination of H2O2 and NO2− in determined concentrations. We also show that the interaction of the He plasma jet with the ambient air is required to generate NO2− and NO3− in solution. PMID:27364563

CO2 Plasma-Treated TiO2 Film as an Effective Electron Transport Layer for High-Performance Planar Perovskite Solar Cells.

PubMed

Wang, Kang; Zhao, Wenjing; Liu, Jia; Niu, Jinzhi; Liu, Yucheng; Ren, Xiaodong; Feng, Jiangshan; Liu, Zhike; Sun, Jie; Wang, Dapeng; Liu, Shengzhong Frank

2017-10-04

Perovskite solar cells (PSCs) have received great attention because of their excellent photovoltaic properties especially for the comparable efficiency to silicon solar cells. The electron transport layer (ETL) is regarded as a crucial medium in transporting electrons and blocking holes for PSCs. In this study, CO 2 plasma generated by plasma-enhanced chemical vapor deposition (PECVD) was introduced to modify the TiO 2 ETL. The results indicated that the CO 2 plasma-treated compact TiO 2 layer exhibited better surface hydrophilicity, higher conductivity, and lower bulk defect state density in comparison with the pristine TiO 2 film. The quality of the stoichiometric TiO 2 structure was improved, and the concentration of oxygen-deficiency-induced defect sites was reduced significantly after CO 2 plasma treatment for 90 s. The PSCs with the TiO 2 film treated by CO 2 plasma for 90 s exhibited simultaneously improved short-circuit current (J SC ) and fill factor. As a result, the PSC-based TiO 2 ETL with CO 2 plasma treatment affords a power conversion efficiency of 15.39%, outperforming that based on pristine TiO 2 (13.54%). These results indicate that the plasma treatment by the PECVD method is an effective approach to modify the ETL for high-performance planar PSCs.

Characteristic effects onto C13H12N2O3 molecule dissolved in solvents of argon plasma at atmospheric pressure

NASA Astrophysics Data System (ADS)

Tanışlı, Murat; Taşal, Erol

2017-07-01

We could easily argue that the decomposition of the chemical chain molecules is a compelling application when it comes to the atmospheric pressure plasma. In this paper, we have investigated the effect of the atmospheric pressure argon plasma on 4-((2-methoxyphenyl)diazenyl)benzene-1,3,-diol molecule (abbreviated as 4MBD) at room temperature. 4MBD molecule is one of the industrial dye molecules used widely. When considering the ecological life, this molecule is very harmful and dangerous. As such, we suggest a new decomposing method for such molecules. Atmospheric pressure plasma jet is principally treated for the breakdown of the molecule in question. Fourier transform infrared spectrometry and UV-Vis spectrophotometry tools are used to characterization of the molecules subsequent to the plasma applications to 4MBD molecule in ethanol and methanol solvents. The atmospheric-pressure plasma jet of argon (Ar) as non-equilibrium has been formed by ac-power generator with frequency—24 kHz and voltage—12 kV. Characterizations for solutions prepared with ethanol and methanol solvents of 4MBD molecule have been examined after applying ( duration 3 min) the atmospheric pressure plasma jet. The molecule is broken at 6C-7N-8N=9C stretching peak in consequence of the plasma treatment. The new plasma photo-products for ethanol and methanol solutions are produced as 6C-7N-8N=9C (strong, varying) and 12C=17O (strong, wide) stretching peaks. Also, the bathochromic drifts are discerned.

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

NASA Astrophysics Data System (ADS)

Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

2016-10-01

In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

Anti-adhesive characteristics of CHF{sub 3}/O{sub 2} and C{sub 4}F{sub 8}/O{sub 2} plasma-modified silicon molds for nanoimprint lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jaemin; Lee, Junmyung; Lee, Hyun Woo

The anti-adhesive characteristics of a plasma-modified silicon mold surface for nanoimprint lithography are presented. Both CHF{sub 3}/O{sub 2} and C{sub 4}F{sub 8}/O{sub 2} plasma were used to form an anti-adhesive layer on silicon mold surfaces. The gas mixing ratios of CHF{sub 3}/O{sub 2} and C{sub 4}F{sub 8}/O{sub 2} were experimentally changed between 0% and 80% to optimize the plasma conditions to obtain a low surface energy of the silicon mold. The plasma characteristics were examined by optical emission spectroscopy (OES). In order to investigate the changes in surface energy and surface chemistry of the anti-adhesive layer during repeated demolding cycles,more » contact angle measurements and X-ray photoelectron spectroscopy (XPS) were performed on the plasma-modified silicon mold surface. Simultaneously, the surface morphology of the demolded resists was evaluated by field-emission scanning electron microscope (FE-SEM) in order to examine the effect of the anti-adhesive layers on the duplicated patterns of the resists. It was observed that the anti-adhesive layer formed by CHF{sub 3}/O{sub 2} plasma treatment was worn out more easily during repeated demolding cycles than the film formed by C{sub 4}F{sub 8}/O{sub 2} plasma treatment, because CHF{sub 3}/O{sub 2} gas plasma formed a thinner plasma-polymerized film over the same plasma treatment time.« less

Mathematical modeling of nitrous oxide (N2O) emissions from full-scale wastewater treatment plants.

PubMed

Ni, Bing-Jie; Ye, Liu; Law, Yingyu; Byers, Craig; Yuan, Zhiguo

2013-07-16

Mathematical modeling of N2O emissions is of great importance toward understanding the whole environmental impact of wastewater treatment systems. However, information on modeling of N2O emissions from full-scale wastewater treatment plants (WWTP) is still sparse. In this work, a mathematical model based on currently known or hypothesized metabolic pathways for N2O productions by heterotrophic denitrifiers and ammonia-oxidizing bacteria (AOB) is developed and calibrated to describe the N2O emissions from full-scale WWTPs. The model described well the dynamic ammonium, nitrite, nitrate, dissolved oxygen (DO) and N2O data collected from both an open oxidation ditch (OD) system with surface aerators and a sequencing batch reactor (SBR) system with bubbling aeration. The obtained kinetic parameters for N2O production are found to be reasonable as the 95% confidence regions of the estimates are all small with mean values approximately at the center. The model is further validated with independent data sets collected from the same two WWTPs. This is the first time that mathematical modeling of N2O emissions is conducted successfully for full-scale WWTPs. While clearly showing that the NH2OH related pathways could well explain N2O production and emission in the two full-scale plants studied, the modeling results do not prove the dominance of the NH2OH pathways in these plants, nor rule out the possibility of AOB denitrification being a potentially dominating pathway in other WWTPs that are designed or operated differently.

Mechanisms of N2O production in biological wastewater treatment under nitrifying and denitrifying conditions.

PubMed

Wunderlin, Pascal; Mohn, Joachim; Joss, Adriano; Emmenegger, Lukas; Siegrist, Hansruedi

2012-03-15

Nitrous oxide (N2O) is an important greenhouse gas and a major sink for stratospheric ozone. In biological wastewater treatment, microbial processes such as autotrophic nitrification and heterotrophic denitrification have been identified as major sources; however, the underlying pathways remain unclear. In this study, the mechanisms of N2O production were investigated in a laboratory batch-scale system with activated sludge for treating municipal wastewater. This relatively complex mixed population system is well representative for full-scale activated sludge treatment under nitrifying and denitrifying conditions. Under aerobic conditions, the addition of nitrite resulted in strongly nitrite-dependent N2O production, mainly by nitrifier denitrification of ammonia-oxidizing bacteria (AOB). Furthermore, N2O is produced via hydroxylamine oxidation, as has been shown by the addition of hydroxylamine. In both sets of experiments, N2O production was highest at the beginning of the experiment, then decreased continuously and ceased when the substrate (nitrite, hydroxylamine) had been completely consumed. In ammonia oxidation experiments, N2O peaked at the beginning of the experiment when the nitrite concentration was lowest. This indicates that N2O production via hydroxylamine oxidation is favored at high ammonia and low nitrite concentrations, and in combination with a high metabolic activity of ammonia-oxidizing bacteria (at 2 to 3 mgO2/l); the contribution of nitrifier denitrification by AOB increased at higher nitrite and lower ammonia concentrations towards the end of the experiment. Under anoxic conditions, nitrate reducing experiments confirmed that N2O emission is low under optimal growth conditions for heterotrophic denitrifiers (e.g. no oxygen input and no limitation of readily biodegradable organic carbon). However, N2O and nitric oxide (NO) production rates increased significantly in the presence of nitrite or low dissolved oxygen concentrations. Copyright �

Novel microelectrode-based online system for monitoring N2O gas emissions during wastewater treatment.

PubMed

Marques, Ricardo; Oehmen, Adrian; Pijuan, Maite

2014-11-04

Clark-type nitrous oxide (N2O) microelectrodes are commonly used for measuring dissolved N2O levels, but have not previously been tested for gas-phase applications, where the N2O emitted from wastewater systems can be directly quantified. In this study, N2O microelectrodes were tested and validated for online gas measurements, and assessed with respect to their temperature, gas flow, composition dependence, gas pressure, and humidity. An exponential correlation between temperature and sensor signal was found, whereas gas flow, composition, pressure, and humidity did not have any influence on the signal. Two of the sensors were tested at different N2O concentration ranges (0-422.3, 0-50, 0-10, and 0-2 ppmv N2O) and exhibited a linear response over each range. The N2O emission dynamics from two laboratory scale sequencing batch reactors performing ammonia or nitrite oxidation were also monitored using one of the microsensors and results were compared with two other analytical methods. Results show that N2O emissions were accurately described with these microelectrodes and support their application for assessing gaseous N2O emissions from wastewater treatment systems. Advantages of the sensors as compared to conventional measurement techniques include a wider quantification range of N2O fluxes, and a single measurement system that can assess both liquid and gas-phase N2O dynamics.

Potential Alternatives for Advanced Energy Material Processing in High Performance Li-ion Batteries (LIBs) via Atmospheric Pressure Plasma Treatment

NASA Astrophysics Data System (ADS)

Duh, Jenq-Gong; Chuang, Shang-I.; Lan, Chun-Kai; Yang, Hao; Chen, Hsien-Wei

2015-09-01

A new processing technique by atmospheric pressure plasma (APP) jet treatment of LIBs was introduced. Ar/N2 plasma enhanced the high-rate anode performance of Li4Ti5O12. Oxygen vacancies were discovered and nitrogen doping were achieved by the surface reaction between pristine Li4Ti5O12 and plasma reactive species (N* and N2+). Electrochemical impedance spectra confirm that plasma modification increases Li ions diffusivity and reduces internal charge-transfer resistance, leading to a superior capacity (132 mAh/g) and excellent stability with negligible capacity decay over 100 cycles under 10C rate. Besides 2D material surface treatment, a specially designed APP generator that are feasible to modify 3D TiO2 powders is proposed. The rate capacity of 20 min plasma treated TiO2 exhibited 20% increment. Plasma diagnosis revealed that excited Ar and N2 was contributed to TiO2 surface reduction as companied by formation of oxygen vacancy. A higher amount of oxygen vacancy increased the chance for excited nitrogen doped onto surface of TiO2 particle. These findings promote the understanding of APP on processing anode materials in high performance LIBs.

Electrochemical Characterization of O2 Plasma Functionalized Multi-Walled Carbon Nanotube Electrode for Legionella pneumophila DNA Sensor

NASA Astrophysics Data System (ADS)

Park, Eun Jin; Lee, Jun-Yong; Hyup Kim, Jun; Kug Kim, Sun; Lee, Cheol Jin; Min, Nam Ki

2010-08-01

An electrochemical DNA sensor for Legionella pneumophila detection was constructed using O2 plasma functionalized multi-walled carbon nanotube (MWCNT) film as a working electrode (WE). The cyclic voltammetry (CV) results revealed that the electrocatalytic activity of plasma functionalized MWCNT (pf-MWCNT) significantly changed depending on O2 plasma treatment time due to some oxygen containing functional groups on the pf-MWCNT surface. Scanning electron microscope (SEM) images and X-ray photoelectron spectroscopy (XPS) spectra were also presented the changes of their surface morphologies and oxygen composition before and after plasma treatment. From a comparison study, it was found that the pf-MWCNT WEs had higher electrocatalytic activity and more capability of probe DNA immobilization: therefore, electrochemical signal changes by probe DNA immobilization and hybridization on pf-MWCNT WEs were larger than on Au WEs. The pf-MWCNT based DNA sensor was able to detect a concentration range of 10 pM-100 nM of target DNA to detect L. pneumophila.

Synergistic Effect of Atmospheric-pressure Plasma and TiO2 Photocatalysis on Inactivation of Escherichia coli Cells in Aqueous Media

NASA Astrophysics Data System (ADS)

Zhou, Renwu; Zhou, Rusen; Zhang, Xianhui; Li, Jiangwei; Wang, Xingquan; Chen, Qiang; Yang, Size; Chen, Zhong; Bazaka, Kateryna; (Ken) Ostrikov, Kostya

2016-12-01

Atmospheric-pressure plasma and TiO2 photocatalysis have been widely investigated separately for the management and reduction of microorganisms in aqueous solutions. In this paper, the two methods were combined in order to achieve a more profound understanding of their interactions in disinfection of water contaminated by Escherichia coli. Under water discharges carried out by microplasma jet arrays can result in a rapid inactivation of E. coli cells. The inactivation efficiency is largely dependent on the feed gases used, the plasma treatment time, and the discharge power. Compared to atmospheric-pressure N2, He and air microplasma arrays, O2 microplasma had the highest activity against E. coli cells in aqueous solution, and showed >99.9% bacterial inactivation efficiency within 4 min. Addition of TiO2 photocatalytic film to the plasma discharge reactor significantly enhanced the inactivation efficiency of the O2 microplasma system, decreasing the time required to achieve 99.9% killing of E. coli cells to 1 min. This may be attributed to the enhancement of ROS generation due to high catalytic activity and stability of the TiO2 photocatalyst in the combined plasma-TiO2 systems. Present work demonstrated the synergistic effect of the two agents, which can be correlated in order to maximize treatment efficiency.

S180 cell growth on low ion energy plasma treated TiO 2 thin films

NASA Astrophysics Data System (ADS)

Dhayal, Marshal; Cho, Su-In; Moon, Jun Young; Cho, Su-Jin; Zykova, Anna

2008-03-01

X-ray photoelectron spectroscopy (XPS) was used to characterise the effects of low energy (<2 eV) argon ion plasma surface modification of TiO 2 thin films deposited by radio frequency (RF) magnetron sputter system. The low energy argon ion plasma surface modification of TiO 2 in a two-stage hybrid system had increased the proportion of surface states of TiO 2 as Ti 3+. The proportion of carbon atoms as alcohol/ether (C sbnd OX) was decreased with increase the RF power and carbon atoms as carbonyl (C dbnd O) functionality had increased for low RF power treatment. The proportion of C( dbnd O)OX functionality at the surface was decreased at low power and further increase in power has showed an increase in its relive proportion at the surface. The growth of S180 cells was observed and it seems that cells are uniformly spreads on tissue culture polystyrene surface and untreated TiO 2 surfaces whereas small-localised cell free area can be seen on plasma treated TiO 2 surfaces which may be due to decrease in C( dbnd O)OX, increase in C dbnd O and active sites at the surface. A relatively large variation in the surface functionalities with no change in the surface roughness was achieved by different RF plasma treatments of TiO 2 surface whereas no significant change in S180 cell growth with different plasma treatments. This may be because cell growth on TiO 2 was mainly influenced by nano-surface characteristics of oxide films rather than surface chemistry.

Development of AlN and TiB2 Composites with Nb2O5, Y2O3 and ZrO2 as Sintering Aids

PubMed Central

González, José C.; Rodríguez, Miguel Á.; Figueroa, Ignacio A.; Villafuerte-Castrejón, María-Elena; Díaz, Gerardo C.

2017-01-01

The synthesis of AlN and TiB2 by spark plasma sintering (SPS) and the effect of Nb2O5, Y2O3 and ZrO2 additions on the mechanical properties and densification of the produced composites is reported and discussed. After the SPS process, dense AlN and TiB2 composites with Nb2O5, Y2O3 and ZrO2 were successfully prepared. X-ray diffraction analysis showed that in the AlN composites, the addition of Nb2O5 gives rise to Nb4N3 during sintering. The compound Y3Al5O12 (YAG) was observed as precipitate in the sample with Y2O3. X-ray diffraction analysis of the TiB2 composites showed TiB2 as a single phase in these materials. The maximum Vickers and toughness values were 14.19 ± 1.43 GPa and 27.52 ± 1.75 GPa for the AlN and TiB2 composites, respectively. PMID:28772681

Electrical and structural characterization of plasma polymerized polyaniline/TiO2 heterostructure diode: a comparative study of single and bilayer TiO2 thin film electrode.

PubMed

Ameen, Sadia; Akhtar, M Shaheer; Kimi, Young Soon; Yang, O-Bong; Shin, Hyung-Shik

2011-04-01

A heterostructure was fabricated using p-type plasma polymerized polyaniline (PANI) and n-type (single and bilayer) titanium dioxide (TiO2) thin film on FTO glass. The deposition of single and bilayer TiO2 thin film on FTO substrate was achieved through doctor blade followed by dip coating technique before subjected to plasma enhanced polymerization. To fabricate p-n heterostructure, a plasma polymerization of aniline was conducted using RF plasma at 13.5 MHz and at the power of 120 W on the single and bilayer TiO2 thin film electrodes. The morphological, optical and the structural characterizations revealed the formation of p-n heterostructures between PANI and TiO2 thin film. The PANI/bilayer TiO2 heterostructure showed the improved current-voltage (I-V) characteristics due to the substantial deposition of PANI molecules into the bilayer TiO2 thin film which provided good conducting pathway and reduced the degree of excitons recombination. The change of linear I-V behavior of PANI/TiO2 heterostructure to non linear behavior with top Pt contact layer confirmed the formation of Schottky contact at the interfaces of Pt layer and PANI/TiO2 thin film layers.

Emissions of NO and N2O in wetland microcosms for swine wastewater treatment.

PubMed

Zhang, Shunan; Liu, Feng; Xiao, Runlin; Li, Yong; Zhou, Juan; Wu, Jinshui

2015-12-01

Nitric oxide (NO) and nitrous oxide (N2O) emitted from wetland systems contribute an important proportion to the global warming effect. In this study, four wetland microcosms vegetated with Myriophyllum elatinoides (WM), Alternanthera philoxeroides (WA), Eichhornia crassipes (WE), or without vegetation (NW) were compared to investigate the emissions of NO and N2O during nitrogen (N) removal process when treating swine wastewater. After 30-day incubation, TN removal rates of 96.4, 74.2, 97.2, and 47.3 % were observed for the WM, WA, WE, and NW microcosms, respectively. Yet, no significant difference was observed in WM and WE (p > 0.05). The average NO and N2O emissions in WE was significantly higher than those in WM, WA, and NW (p < 0.05). In addition, the emission of N2O in WE accounted for 2.10 % of initial TN load and 2.17 % of the total amount of TN removal, compared with less than 1 % in the other microcosms. These findings indicate that wetland vegetated with M. elatinoides may be an optimal system for swine wastewater treatment, based on its higher removal of N and lower emissions of NO and N2O.

Assessment of online monitoring strategies for measuring N2O emissions from full-scale wastewater treatment systems.

PubMed

Marques, Ricardo; Rodriguez-Caballero, A; Oehmen, Adrian; Pijuan, Maite

2016-08-01

Clark-Type nitrous oxide (N2O) sensors are routinely used to measure dissolved N2O concentrations in wastewater treatment plants (WWTPs), but have never before been applied to assess gas-phase N2O emissions in full-scale WWTPs. In this study, a full-scale N2O gas sensor was tested and validated for online gas measurements, and assessed with respect to its linearity, temperature dependence, signal saturation and drift prior to full-scale application. The sensor was linear at the concentrations tested (0-422.3, 0-50 and 0-10 ppmv N2O) and had a linear response up to 2750 ppmv N2O. An exponential correlation between temperature and sensor signal was described and predicted using a double exponential equation while the drift did not have a significant influence on the signal. The N2O gas sensor was used for online N2O monitoring in a full-scale sequencing batch reactor (SBR) treating domestic wastewater and results were compared with those obtained by a commercial online gas analyser. Emissions were successfully described by the sensor, being even more accurate than the values given by the commercial analyser at N2O concentrations above 500 ppmv. Data from this gas N2O sensor was also used to validate two models to predict N2O emissions from dissolved N2O measurements, one based on oxygen transfer rate and the other based on superficial velocity of the gas bubble. Using the first model, predictions for N2O emissions agreed by 98.7% with the measured by the gas sensor, while 87.0% similarity was obtained with the second model. This is the first study showing a reliable estimation of gas emissions based on dissolved N2O online data in a full-scale wastewater treatment facility. Copyright © 2016 Elsevier Ltd. All rights reserved.

O2 Plasma Etching and Antistatic Gun Surface Modifications for CNT Yarn Microelectrode Improve Sensitivity and Antifouling Properties.

PubMed

Yang, Cheng; Wang, Ying; Jacobs, Christopher B; Ivanov, Ilia N; Venton, B Jill

2017-05-16

Carbon nanotube (CNT) based microelectrodes exhibit rapid and selective detection of neurotransmitters. While different fabrication strategies and geometries of CNT microelectrodes have been characterized, relatively little research has investigated ways to selectively enhance their electrochemical properties. In this work, we introduce two simple, reproducible, low-cost, and efficient surface modification methods for carbon nanotube yarn microelectrodes (CNTYMEs): O 2 plasma etching and antistatic gun treatment. O 2 plasma etching was performed by a microwave plasma system with oxygen gas flow and the optimized time for treatment was 1 min. The antistatic gun treatment flows ions by the electrode surface; two triggers of the antistatic gun was the optimized number on the CNTYME surface. Current for dopamine at CNTYMEs increased 3-fold after O 2 plasma etching and 4-fold after antistatic gun treatment. When the two treatments were combined, the current increased 12-fold, showing the two effects are due to independent mechanisms that tune the surface properties. O 2 plasma etching increased the sensitivity due to increased surface oxygen content but did not affect surface roughness while the antistatic gun treatment increased surface roughness but not oxygen content. The effect of tissue fouling on CNT yarns was studied for the first time, and the relatively hydrophilic surface after O 2 plasma etching provided better resistance to fouling than unmodified or antistatic gun treated CNTYMEs. Overall, O 2 plasma etching and antistatic gun treatment improve the sensitivity of CNTYMEs by different mechanisms, providing the possibility to tune the CNTYME surface and enhance sensitivity.

Synergistic Effect of Atmospheric-pressure Plasma and TiO2 Photocatalysis on Inactivation of Escherichia coli Cells in Aqueous Media

PubMed Central

Zhou, Renwu; Zhou, Rusen; Zhang, Xianhui; Li, Jiangwei; Wang, Xingquan; Chen, Qiang; Yang, Size; Chen, Zhong; Bazaka, Kateryna; (Ken) Ostrikov, Kostya

2016-01-01

Atmospheric-pressure plasma and TiO2 photocatalysis have been widely investigated separately for the management and reduction of microorganisms in aqueous solutions. In this paper, the two methods were combined in order to achieve a more profound understanding of their interactions in disinfection of water contaminated by Escherichia coli. Under water discharges carried out by microplasma jet arrays can result in a rapid inactivation of E. coli cells. The inactivation efficiency is largely dependent on the feed gases used, the plasma treatment time, and the discharge power. Compared to atmospheric-pressure N2, He and air microplasma arrays, O2 microplasma had the highest activity against E. coli cells in aqueous solution, and showed >99.9% bacterial inactivation efficiency within 4 min. Addition of TiO2 photocatalytic film to the plasma discharge reactor significantly enhanced the inactivation efficiency of the O2 microplasma system, decreasing the time required to achieve 99.9% killing of E. coli cells to 1 min. This may be attributed to the enhancement of ROS generation due to high catalytic activity and stability of the TiO2 photocatalyst in the combined plasma-TiO2 systems. Present work demonstrated the synergistic effect of the two agents, which can be correlated in order to maximize treatment efficiency. PMID:28004829

Use of statistical design of experiments for surface modification of Kapton films by CF4sbnd O2 microwave plasma treatment

NASA Astrophysics Data System (ADS)

Grandoni, Andrea; Mannini, Giacomo; Glisenti, Antonella; Manariti, Antonella; Galli, Giancarlo

2017-10-01

A statistical design of experiments (DoE) was used to evaluate the effects of CF4sbnd O2 plasma on Kapton films in which the duration of treatment, volume ratio of plasma gases, and microwave power were selected as effective experimental factors for systematic investigation of surface modification. Static water contact angle (θW), polar component of surface free energy (γSp) and surface O/C atomic ratio were analyzed as response variables. A significant enhancement in wettability and polarity of the treated films compared to untreated Kapton films was observed; depending on the experimental conditions, θW very significantly decreased, showing full wettability, and γSp rose dramatically, up to ten times. Within the DoE the conditions of plasma treatment were identified that resulted in selected optimal values of θW, γSp and O/C responses. Surface chemical changes were detected by XPS and ATR-IR investigations that evidenced both the introduction of fluorinated groups and the opening of the imide ring in the plasma-treated films.

Friction and wear behaviour of plasma sprayed Cr2O3-TiO2 coating

NASA Astrophysics Data System (ADS)

Bagde, Pranay; Sapate, S. G.; Khatirkar, R. K.; Vashishtha, Nitesh; Tailor, Satish

2018-02-01

Cr2O3-25TiO2 coating was deposited by atmospheric plasma spray (APS) coating technique. Effect of load (5-30 N) and sliding velocity (0.25, 0.75 m s-1) on friction coefficient and abrasive wear behaviour of the Cr2O3-25TiO2 coating was studied. Mechanical and microstructural characterization of the Cr2O3-25TiO2 coating was carried out. With an increase in sliding velocity, abrasive wear rate and friction coefficient (COF) decreased while wear rate and friction coefficient showed an increasing trend with the load. The worn out surfaces were analyzed by SEM, EDS and XRD. At lower sliding velocity, XRD analysis revealed peaks of Ti2O3, Ti3O5, CrO2 and CrO3. In addition, peak of Ti4O7 was also detected at higher sliding velocity and at 30 N load. At higher sliding velocity medium to severe tribo oxidation was observed. XPS analysis of worn surfaces at both the sliding velocities, showed surface film of oxides of titanium and chromium along with Cr(OH)3. Magneli phase titanium oxides with sub stoichiometric composition, along with surface films of chromium oxides and hydroxides altered the friction and wear behaviour of the coating. The decrease in friction coefficient with an increase in sliding velocity was attributed to tribo oxides and tribochemical reaction films having lower shear strength with good lubricating properties. The mechanism of material removal involved plastic deformation at lower load whereas inter-granular and trans-granular fracture, delamination cracking and splat fracture was observed with an increase load from 10 N to 30 N.

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locatemore » in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.« less

Silicon nitride and silicon etching by CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaler, Sanbir S.; Lou, Qiaowei; Donnelly, Vincent M., E-mail: vmdonnelly@uh.edu

2016-07-15

Silicon nitride (SiN, where Si:N ≠ 1:1) films low pressure-chemical vapor deposited on Si substrates, Si films on Ge on Si substrates, and p-Si samples were exposed to plasma beams emanating from CH{sub 3}F/O{sub 2} or CH{sub 3}F/CO{sub 2} inductively coupled plasmas. Conditions within the plasma beam source were maintained at power of 300 W (1.9 W/cm{sup 3}), pressure of 10 mTorr, and total gas flow rate of 10 sccm. X-ray photoelectron spectroscopy was used to determine the thicknesses of Si/Ge in addition to hydrofluorocarbon polymer films formed at low %O{sub 2} or %CO{sub 2} addition on p-Si and SiN. Polymer film thickness decreasedmore » sharply as a function of increasing %O{sub 2} or %CO{sub 2} addition and dropped to monolayer thickness above the transition point (∼48% O{sub 2} or ∼75% CO{sub 2}) at which the polymer etchants (O and F) number densities in the plasma increased abruptly. The C(1s) spectra for the polymer films deposited on p-Si substrates appeared similar to those on SiN. Spectroscopic ellipsometry was used to measure the thickness of SiN films etched using the CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams. SiN etching rates peaked near 50% O{sub 2} addition and 73% CO{sub 2} addition. Faster etching rates were measured in CH{sub 3}F/CO{sub 2} than CH{sub 3}F/O{sub 2} plasmas above 70% O{sub 2} or CO{sub 2} addition. The etching of Si stopped after a loss of ∼3 nm, regardless of beam exposure time and %O{sub 2} or %CO{sub 2} addition, apparently due to plasma assisted oxidation of Si. An additional GeO{sub x}F{sub y} peak was observed at 32.5 eV in the Ge(3d) region, suggesting deep penetration of F into Si, under the conditions investigated.« less

Experimental study of NO2 reduction in N2/Ar and O2/Ar mixtures by pulsed corona discharge.

PubMed

Zhu, Xinbo; Zheng, Chenghang; Gao, Xiang; Shen, Xu; Wang, Zhihua; Luo, Zhongyang; Cen, Kefa

2014-11-01

Non-thermal plasma technology has been regarded as a promising alternative technology for NOx removal. The understanding of NO2 reduction characteristics is extremely important since NO2 reduction could lower the total NO oxidation rate in the plasma atmosphere. In this study, NO2 reduction was experimentally investigated using a non-thermal plasma reactor driven by a pulsed power supply for different simulated gas compositions and operating parameters. The NO2 reduction was promoted by increasing the specific energy density (SED), and the highest conversion rates were 33.7%, 42.1% and 25.7% for Ar, N2/Ar and O2/Ar, respectively. For a given SED, the NO2 conversion rate had the order N2/Ar>Ar>O2/Ar. The highest energy yield of 3.31g/kWh was obtained in N2/Ar plasma and decreased with increasing SED; the same trends were also found in the other two gas compositions. The conversion rate decreased with increasing initial NO2 concentration. Furthermore, the presence of N2 or O2 led to different reaction pathways for NO2 conversion due to the formation of different dominating reactive radicals. Copyright © 2014. Published by Elsevier B.V.

Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

PubMed

Xie, Yuan; Wu, Enxiu; Hu, Ruixue; Qian, Shuangbei; Feng, Zhihong; Chen, Xuejiao; Zhang, Hao; Xu, Linyan; Hu, Xiaodong; Liu, Jing; Zhang, Daihua

2018-06-21

Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (<2 ms), high detectivity (3.6 × 1013 Jones) and very large photoconductive gain (>106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

Photoacoustic Spectroscopy for the Quantification of N2O in the Off-Gas of Wastewater Treatment Plants.

PubMed

Thaler, Klemens M; Berger, Christoph; Leix, Carmen; Drewes, Jörg; Niessner, Reinhard; Haisch, Christoph

2017-03-21

Different configurations of photoacoustic (PA) setups for the online-measurement of gaseous N 2 O, employing semiconductor lasers at 2.9 and 4.5 μm, were developed and tested. Their performance was assessed with respect to the analysis of N 2 O emissions from wastewater treatment plants. For this purpose, the local N 2 O emissions of a wastewater treatment bioreactor was sampled by a dedicated mobile sampling device, and the total N 2 O emissions were analyzed in the gastight headspace of the bioreactor. We found that the use of a quantum-cascade laser emitting at about 4.53 μm, operated in a wavelength modulation mode, in combination with a conventional longitudinal PA cell yielded the highest sensitivity (<100 ppbv). However, we also observed a strong cross-sensitivity to humidity, which can be explained by increased V-T relaxation. This observation in combination with the limited dynamic range (max conc. ∼ 3000 ppmv) led us to the use of the less-sensitive but spectroscopically more robust 2.9 μm laser. A detection limit below 1 ppmv, a dynamic range of more than 4 orders of magnitude, no influence of humidity or any other substance relevant to the off-gas analysis, as well as a comparable low price of the laser source made it the ideal tool for N 2 O analyses of the off-gas of a wastewater treatment plant. Such a system was implemented successfully in a full-scale wastewater treatment plant. The results regarding the comparison of different PA setups can be transferred to other systems, and the optimum performance can be selected according to the specific demands.

Photocatalytic characteristic and photodegradation kinetics of toluene using N-doped TiO2 modified by radio frequency plasma.

PubMed

Shie, Je-Lueng; Lee, Chiu-Hsuan; Chiou, Chyow-San; Chen, Yi-Hung; Chang, Ching-Yuan

2014-01-01

This study investigates the feasibility of applications of the plasma surface modification of photocatalysts and the removal of toluene from indoor environments. N-doped TiO2 is prepared by precipitation methods and calcined using a muffle furnace (MF) and modified by radio frequency plasma (RF) at different temperatures with light sources from a visible light lamp (VLL), a white light-emitting diode (WLED) and an ultraviolet light-emitting diode (UVLED). The operation parameters and influential factors are addressed and prepared for characteristic analysis and photo-decomposition examination. Furthermore, related kinetic models are established and used to simulate the experimental data. The characteristic analysis results show that the RF plasma-calcination method enhanced the Brunauer Emmett Teller surface area of the modified photocatalysts effectively. For the elemental analysis, the mass percentages of N for the RF-modified photocatalyst are larger than those of MF by six times. The aerodynamic diameters of the RF-modifiedphotocatalyst are all smaller than those of MF. Photocatalytic decompositions of toluene are elucidated according to the Langmuir-Hinshelwood model. Decomposition efficiencies (eta) of toluene for RF-calcined methods are all higher than those of commercial TiO2 (P25). Reaction kinetics ofphoto-decomposition reactions using RF-calcined methods with WLED are proposed. A comparison of the simulation results with experimental data is also made and indicates good agreement. All the results provide useful information and design specifications. Thus, this study shows the feasibility and potential use of plasma modification via LED in photocatalysis.

Production of N2O/+/ by reaction of metastable O2/+/ ions with N2

NASA Technical Reports Server (NTRS)

Ajello, J. M.; Rayermann, P.

1975-01-01

Photoionization mass spectrometry examination of the production of N2O(+) was undertaken to determine whether N2(+) or O2(+) ions are responsible for onset of N2O(+). It appears that the N2(+) ion does not contribute significantly to the production of N2O(+) in this experiment. Therefore, it is clear that excited O2(+) is responsible for the formation of N2O(+) near the appearance potential of these ions.

Core-shell iron oxide-layered double hydroxide: High electrochemical sensing performance of H2O2 biomarker in live cancer cells with plasma therapeutics.

PubMed

Asif, Muhammad; Liu, Hongwei; Aziz, Ayesha; Wang, Haitao; Wang, Zhengyun; Ajmal, Muhammad; Xiao, Fei; Liu, Hongfang

2017-11-15

In this work, we develop a new type of multifunctional core-shell nanomaterial by controllable integration of CuAl layered double hydroxides (LDHs) over the surface of iron oxides (Fe 3 O 4 ) nanospheres (NSs) to fabricate (Fe 3 O 4 @CuAl NSs) hybrid material with interior tunability of LDH phase and explore its practical application in ultrasensitive detection of emerging biomarker, i.e., H 2 O 2 as cancer diagnostic probe. In addition, atmospheric pressure plasmas (APPs) have also been used as potential therapeutic approach for cancer treatment. Due to the synergistic combination of p-type semiconductive channels of LDHs with multi-functional properties, unique morphology and abundant surface active sites, the Fe 3 O 4 @CuAl NSs modified electrode exhibited attractive electrocatalytic activity towards H 2 O 2 reduction. Under the optimized conditions, the proposed biosensor demonstrated striking electrochemical sensing performances to H 2 O 2 including linear range as broad as 8 orders of magnitude, low real detection limit of 1nM (S/N = 3), high sensitivity, good reproducibility and long-term stability. Arising from the superb efficiency, the electrochemical biosensor has been used for in vitro determination of H 2 O 2 concentrations in human urine and serum samples prior to and following the intake of coffee, and real-time monitoring of H 2 O 2 efflux from different cancer cell lines in normal state and after plasma treatment. We believe that this novel nano-platform of structurally integrated core-shell nanohybrid materials combined with APPs will enhance diagnostic as well as therapeutic window for cancer diseases. Copyright © 2017 Elsevier B.V. All rights reserved.

Reduction and prediction of N2O emission from an Anoxic/Oxic wastewater treatment plant upon DO control and model simulation.

PubMed

Sun, Shichang; Bao, Zhiyuan; Li, Ruoyu; Sun, Dezhi; Geng, Haihong; Huang, Xiaofei; Lin, Junhao; Zhang, Peixin; Ma, Rui; Fang, Lin; Zhang, Xianghua; Zhao, Xuxin

2017-11-01

In order to make a better understanding of the characteristics of N 2 O emission in A/O wastewater treatment plant, full-scale and pilot-scale experiments were carried out and a back propagation artificial neural network model based on the experimental data was constructed to make a precise prediction of N 2 O emission. Results showed that, N 2 O flux from different units followed a descending order: aerated grit tank>oxic zone≫anoxic zone>final clarifier>primary clarifier, but 99.4% of the total emission of N 2 O (1.60% of N-load) was monitored from the oxic zone due to its big surface area. A proper DO control could reduce N 2 O emission down to 0.21% of N-load in A/O process, and a two-hidden-layers back propagation model with an optimized structure of 4:3:9:1 could achieve a good simulation of N 2 O emission, which provided a new method for the prediction of N 2 O emission during wastewater treatment. Copyright © 2017. Published by Elsevier Ltd.

Experimental investigation of the contact resistance of Graphene/MoS2 interface treated with O2 plasma

NASA Astrophysics Data System (ADS)

Lu, Qin; Liu, Yan; Han, Genquan; Fang, Cizhe; Shao, Yao; Zhang, Jincheng; Hao, Yue

2018-02-01

High contact resistance has been a major bottleneck for MoS2 to achieve high performances among two-dimensional material based optoelectronic and electronic devices. In this study, we investigate the contact resistances of different layered graphene film with MoS2 film with Ti/Au electrodes under different O2 plasma treatment time using the circular transmission line model (CTLM). Annealing process followed O2 plasma process to reduce the oxygen element introduced. Raman and X-ray photoelectric spectroscopy were used to analyze the quality of the materials. Finally, the current and voltage curve indicates good linear characteristics. Under the optimized condition of the O2 plasma treatment, a relatively low contact resistance (∼35.7 Ohm mm) without back gate voltage in single-layer graphene/MoS2 structure at room temperature was achieved compared with the existing reports. This method of introducing graphene as electrodes for MoS2 film demonstrates a remarkable ability to improve the contact resistance, without additional channel doping for two-dimensional materials based devices, which paves the way for MoS2 to be a more promising channel material in optoelectronic and electronic integration.

OH and O radicals production in atmospheric pressure air/Ar/H2O gliding arc discharge plasma jet

NASA Astrophysics Data System (ADS)

N, C. ROY; M, R. TALUKDER; A, N. CHOWDHURY

2017-12-01

Atmospheric pressure air/Ar/H2O gliding arc discharge plasma is produced by a pulsed dc power supply. An optical emission spectroscopic (OES) diagnostic technique is used for the characterization of plasmas and for identifications of {{OH}} and {{O}} radicals along with other species in the plasmas. The OES diagnostic technique reveals the excitation T x ≈ 5550-9000 K, rotational T r ≈ 1350-2700 K and gas T g ≈ 850-1600 K temperatures, and electron density {n}{{e}}≈ ({1.1-1.9})× {10}14 {{{cm}}}-3 under different experimental conditions. The production and destruction of {{OH}} and {{O}} radicals are investigated as functions of applied voltage and air flow rate. Relative intensities of {{OH}} and {{O}} radicals indicate that their production rates are increased with increasing {{Ar}} content in the gas mixture and applied voltage. {n}{{e}} reveals that the higher densities of {{OH}} and {{O}} radicals are produced in the discharge due to more effective electron impact dissociation of {{{H}}}2{{O}} and {{{O}}}2 molecules caused by higher kinetic energies as gained by electrons from the enhanced electric field as well as by enhanced {n}{{e}}. The productions of {{OH}} and {{O}} are decreasing with increasing air flow rate due to removal of Joule heat from the discharge region but enhanced air flow rate significantly modifies discharge maintenance properties. Besides, {T}{{g}} significantly reduces with the enhanced air flow rate. This investigation reveals that {{Ar}} plays a significant role in the production of {{OH}} and {{O}} radicals.

n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Han, Sang-Heon; Mauze, Akhil; Ahmadi, Elaheh; Mates, Tom; Oshima, Yuichi; Speck, James S.

2018-04-01

Ge and Sn as n-type dopants in (001) β-Ga2O3 films were investigated using plasma-assisted molecular beam epitaxy. The Ge concentration showed a strong dependence on the growth temperature, whereas the Sn concentration remains independent of the growth temperature. The maximum growth temperature at which a wide range of Ge concentrations (from 1017 to 1020 cm-3) could be achieved was 675 °C while the same range of Sn concentration could be achieved at growth temperature of 750 °C. Atomic force microscopy results revealed that higher growth temperature shows better surface morphology. Therefore, our study reveals a tradeoff between higher Ge doping concentration and high quality surface morphology on (001) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. The Ge doped films had an electron mobility of 26.3 cm2 V-1 s-1 at the electron concentration of 6.7 × 1017 cm-3 whereas the Sn doped films had an electron mobility of 25.3 cm2 V-1 s-1 at the electron concentration of 1.1 × 1018 cm-3.

Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors

NASA Astrophysics Data System (ADS)

Lechaux, Y.; Fadjie-Djomkam, A. B.; Bollaert, S.; Wichmann, N.

2016-09-01

Capacitance-voltage (C-V) measurements and x-ray photoelectron spectroscopy (XPS) analysis were performed in order to investigate the effect of a oxygen (O2) plasma after oxide deposition on the Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor structure passivated with ammonia NH4OH solution. From C-V measurements, an improvement of charge control is observed using the O2 plasma postoxidation process on In0.53Ga0.47As, while the minimum of interface trap density remains at a good value lower than 1 × 1012 cm-2 eV-1. From XPS measurements, we found that NH4OH passivation removes drastically the Ga and As native oxides on the In0.53Ga0.47As surface and the O2 plasma postoxidation process enables the reduction of interface re-oxidation after post deposition annealing (PDA) of the oxide. The advanced hypothesis is the formation of interfacial barrier between Al2O3 and In0.53Ga0.47As which prevents the diffusion of oxygen species into the semiconductor surface during PDA.

Lu2O3-SiO2-ZrO2 Coatings for Environmental Barrier Application by Solution Precursor Plasma Spraying and Influence of Precursor Chemistry

NASA Astrophysics Data System (ADS)

Darthout, Émilien; Quet, Aurélie; Braidy, Nadi; Gitzhofer, François

2014-02-01

As environmental barrier coatings are subjected to thermal stress in gas turbine engines, the introduction of a secondary phase as zircon (ZrSiO4) is likely to increase the stress resistance of Lu2Si2O7 coatings generated by induction plasma spraying using liquid precursors. In a first step, precursor chemistry effect is investigated by the synthesis of ZrO2-SiO2 nanopowders by induction plasma nanopowder synthesis technique. Tetraethyl orthosilicate (TEOS) as silicon precursor and zirconium oxynitrate and zirconium ethoxide as zirconium precursors are mixed in ethanol and produce a mixture of tetragonal zirconia and amorphous silica nanoparticles. The use of zirconium ethoxide precursor results in zirconia particles with diameter below 50 nm because of exothermic thermal decomposition of the ethoxide and its high boiling point with respect to solvent, while larger particles are formed when zirconium oxynitrate is employed. The formation temperature of zircon from zirconia and silica oxides is found at 1425 °C. Second, coatings are synthesized in Lu2O3-ZrO2-SiO2 system. After heat treatment, the doping effect of lutetium on zirconia grains totally inhibits the zircon formation. Dense coatings are obtained with the use of zirconium ethoxide because denser particles with a homogeneous diameter distribution constitute the coating.

Study of ultrasound-assisted radio-frequency plasma discharges in n-dodecane

NASA Astrophysics Data System (ADS)

Camerotto, Elisabeth; De Schepper, Peter; Nikiforov, Anton Y.; Brems, Steven; Shamiryan, Denis; Boullart, Werner; Leys, Christophe; De Gendt, Stefan

2012-10-01

This paper investigates the generation of a stable plasma phase in a liquid hydrocarbon (n-dodecane) by means of ultrasound (US) and radio-frequency (RF) or electromagnetic radiation. It is demonstrated for the first time that ultrasonic aided RF plasma discharges can be generated in a liquid. Plasma discharges are obtained for different gas mixtures at a pressure of 12 kPa and at low ignition powers (100 W for RF and 2.4 W cm-2 for US). Direct carbon deposition from the liquid precursor on Cu, Ni, SiO2 and Si substrates has been obtained and no apparent compositional or structural difference among the substrate materials was observed. Characterization of the deposited solid phase revealed an amorphous structure. In addition, structural changes in the liquid precursor after plasma treatment have been analysed. Optical emission spectroscopy (OES) allowed the estimation of several plasma characteristic temperatures. The plasma excitation temperature was estimated to be about 2.3-2.4 eV. The rotational and vibrational temperatures of the discharge in n-dodecane with Ar as a feed gas were 1400 K and 6500 K, respectively. In Ar/O2 plasma, an increased rotational (1630 K) and vibrational temperature (7200 K) were obtained.

Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl2/N2/O2 plasma with a low-energy ion bombardment

NASA Astrophysics Data System (ADS)

Zhong, Yaozong; Zhou, Yu; Gao, Hongwei; Dai, Shujun; He, Junlei; Feng, Meixin; Sun, Qian; Zhang, Jijun; Zhao, Yanfei; DingSun, An; Yang, Hui

2017-10-01

Etching of GaN/AlGaN heterostructure by O-containing inductively coupled Cl2/N2 plasma with a low-energy ion bombardment can be self-terminated at the surface of the AlGaN layer. The estimated etching rates of GaN and AlGaN were 42 and 0.6 nm/min, respectively, giving a selective etching ratio of 70:1. To study the mechanism of the etching self-termination, detailed characterization and analyses were carried out, including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). It was found that in the presence of oxygen, the top surface of the AlGaN layer was converted into a thin film of (Al,Ga)Ox with a high bonding energy, which effectively prevented the underlying atoms from a further etching, resulting in a nearly self-terminated etching. This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.

Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Carcia, P. F.; McLean, R. S.; Groner, M. D.; Dameron, A. A.; George, S. M.

2009-07-01

Thin films grown by Al2O3 atomic layer deposition (ALD) and SiN plasma-enhanced chemical vapor deposition (PECVD) have been tested as gas diffusion barriers either individually or as bilayers on polymer substrates. Single films of Al2O3 ALD with thicknesses of ≥10 nm had a water vapor transmission rate (WVTR) of ≤5×10-5 g/m2 day at 38 °C/85% relative humidity (RH), as measured by the Ca test. This WVTR value was limited by H2O permeability through the epoxy seal, as determined by the Ca test for the glass lid control. In comparison, SiN PECVD films with a thickness of 100 nm had a WVTR of ˜7×10-3 g/m2 day at 38 °C/85% RH. Significant improvements resulted when the SiN PECVD film was coated with an Al2O3 ALD film. An Al2O3 ALD film with a thickness of only 5 nm on a SiN PECVD film with a thickness of 100 nm reduced the WVTR from ˜7×10-3 to ≤5×10-5 g/m2 day at 38 °C/85% RH. The reduction in the permeability for Al2O3 ALD on the SiN PECVD films was attributed to either Al2O3 ALD sealing defects in the SiN PECVD film or improved nucleation of Al2O3 ALD on SiN.

N2O emissions from a nitrogen-enriched river

USGS Publications Warehouse

McMahon, P.B.; Dennehy, K.F.

1999-01-01

Nitrous oxide (N2O) emissions from the South Platte River in Colorado were measured using closed chambers in the fall, winter, and summer of 1994- 1995. The South Platte River was enriched in inorganic N (9-800 ??M) derived from municipal wastewater effluent and groundwater return flows from irrigated agricultural fields. River water was as much as 2500% supersaturated with N2O, and median N2O emission rates from the river surface ranged from less than 90 to 32 600 ??g-N m-2 d-1. Seventy-nine percent of the variance in N2O emission rates was explained by concentrations of total inorganic N in river water and by water temperature. The estimated total annual N2O emissions from the South Platte River were 2 x 1013-6 x 1013 ??g-N yr-1. This amount of annual N2O emissions was similar to the estimated annual N2O emissions from all primary municipal wastewater treatment processes in the United States (1). Results from this study indicate that N-enriched rivers could be important anthropogenic sources of N2O to the atmosphere. However, N2O emission measurements from other N-enriched rivers are needed to better quantify this source.Nitrous oxide (N2O) emissions from the South Platte River in Colorado were measured using closed chambers in the fall, winter, and summer of 1994-1995. The South Platte River was enriched in inorganic N (9-800 ??M) derived from municipal wastewater effluent and groundwater return flows from irrigated agricultural fields. River water was as much as 2500% supersaturated with N2O, and median N2O emission rates from the river surface ranged from less than 90 to 32 600 ??g-N m-2 d-1. Seventy-nine percent of the variance in N2O emission rates was explained by concentrations of total inorganic N in river water and by water temperature. The estimated total annual N2O emissions from the South Platte River were 2??1013-6??1013 ??g-N yr-1. This amount of annual N2O emissions was similar to the estimated annual N2O emissions from all primary municipal

Selective Encaging of N2O in N2O-N2 Binary Gas Hydrates via Hydrate-Based Gas Separation.

PubMed

Yang, Youjeong; Shin, Donghoon; Choi, Seunghyun; Woo, Yesol; Lee, Jong-Won; Kim, Dongseon; Shin, Hee-Young; Cha, Minjun; Yoon, Ji-Ho

2017-03-21

The crystal structure and guest inclusion behaviors of nitrous oxide-nitrogen (N 2 O-N 2 ) binary gas hydrates formed from N 2 O/N 2 gas mixtures are determined through spectroscopic analysis. Powder X-ray diffraction results indicate that the crystal structure of all the N 2 O-N 2 binary gas hydrates is identified as the structure I (sI) hydrate. Raman spectra for the N 2 O-N 2 binary gas hydrate formed from N 2 O/N 2 (80/20, 60/40, 40/60 mol %) gas mixtures reveal that N 2 O molecules occupy both large and small cages of the sI hydrate. In contrast, there is a single Raman band of N 2 O molecules for the N 2 O-N 2 binary gas hydrate formed from the N 2 O/N 2 (20/80 mol %) gas mixture, indicating that N 2 O molecules are trapped in only large cages of the sI hydrate. From temperature-dependent Raman spectra and the Predictive Soave-Redlich-Kwong (PSRK) model calculation, we confirm the self-preservation of N 2 O-N 2 binary gas hydrates in the temperature range of 210-270 K. Both the experimental measurements and the PSRK model calculations demonstrate the preferential occupation of N 2 O molecules rather than N 2 molecules in the hydrate cages, leading to a possible process for separating N 2 O from gas mixtures via hydrate formation. The phase equilibrium conditions, pseudo-pressure-composition (P-x) diagram, and gas storage capacity of N 2 O-N 2 binary gas hydrates are discussed in detail.

Argon-plasma-controlled optical reset in the SiO2/Cu filamentary resistive memory stack

NASA Astrophysics Data System (ADS)

Kawashima, T.; Yew, K. S.; Zhou, Y.; Ang, D. S.; Zhang, H. Z.; Kyuno, K.

2018-05-01

We show that resistive switching in the SiO2/Cu stack can be modified by a brief exposure of the oxide to an Ar plasma. The set voltage of the SiO2/Cu stack is reduced by 33%, while the breakdown voltage of the SiO2/Si stack (control) is almost unchanged. Besides, the Ar plasma treatment suppresses the negative photoconductivity or optical resistance reset effect, where the electrically formed filamentary conductive path consisting of Cu-ion and oxygen-vacancy clusters is disrupted by the recombination of the oxygen vacancies with nearby light-excited oxygen ions. From the enhanced O-H peak in the Fourier-transform infrared spectrum of the plasma-treated oxide, it is proposed that the Ar plasma has created more oxygen vacancies in the surface region of the oxide. These vacancies in turn adsorb water molecules, which act as counter anions (OH-) promoting the migration of Cu cations into the oxide and forming a more complete Cu filament that is less responsive to light. The finding points to the prospect of a control over the optical resistance reset effect by a simple surface treatment step.

One-step argon/nitrogen binary plasma jet irradiation of Li4Ti5O12 for stable high-rate lithium ion battery anodes

NASA Astrophysics Data System (ADS)

Lan, Chun-Kai; Chuang, Shang-I.; Bao, Qi; Liao, Yen-Ting; Duh, Jenq-Gong

2015-02-01

Atmospheric pressure Ar/N2 binary plasma jet irradiation has been introduced into the manufacturing process of lithium ions batteries as a facile, green and scalable post-fabrication treatment approach, which enhanced significantly the high-rate anode performance of lithium titanate (Li4Ti5O12). Main emission lines in Ar/N2 plasma measured by optical emission spectroscopy reveal that the dominant excited high-energy species in Ar/N2 plasma are N2*, N2+, N∗ and Ar∗. Sufficient oxygen vacancies have been evidenced by high resolution X-ray photoelectron spectroscopy analysis and Raman spectra. Nitrogen doping has been achieved simultaneously by the surface reaction between pristine Li4Ti5O12 particles and chemically reactive plasma species such as N∗ and N2+. The variety of Li4Ti5O12 particles on the surface of electrodes after different plasma processing time has been examined by grazing incident X-Ray diffraction. Electrochemical impedance spectra (EIS) confirm that the Ar/N2 atmospheric plasma treatment facilitates Li+ ions diffusion and reduces the internal charge-transfer resistance. The as-prepared Li4Ti5O12 anodes exhibit a superior capacity (132 mAh g-1) and excellent stability with almost no capacity decay over 100 cycles under a high C rate (10C).

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

NASA Astrophysics Data System (ADS)

Zaidi, Z. H.; Lee, K. B.; Roberts, J. W.; Guiney, I.; Qian, H.; Jiang, S.; Cheong, J. S.; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, P. R.; Houston, P. A.

2018-05-01

In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

O2 Herzberg State Reaction with N2: A Possible Source of Stratospheric N2O

NASA Technical Reports Server (NTRS)

Slanger, Tom G.; Copeland, Richard A.

1997-01-01

The goal of this one-year investigation was to determine whether N2O is formed in atmospherically significant quantities by the reaction of vibrationally excited levels of the O2((A3 Sigma(sub u)(sup +)) state with nitrogen. O2(A3 Sigma(sub u)(sup +)) is made throughout the upper stratosphere in considerable amounts by solar photoabsorption, and only a very small reactive yield is necessary for this mechanism to be a major N2O source. By long-term 245-252 nm irradiation of O2/N2 mixtures on- and off-resonance with absorption lines in the O2(A3 Sigma(sub u)(sup +) - X3 Sigma(sub g)(sup -)) transition, followed by N2O analysis by frequency-modulated diode laser absorption spectroscopy, we determined an upper limit for the N2O yield of the candidate reaction. This limit, 3 x 10(exp -5), eliminates O2(A3 Sigma(sub u)(sup +)) + N2 as a significant channel for the generation of stratospheric N2O. In further measurements, we established that N2O is stable under our photolysis conditions, showing that the small amounts of ozone generated from the reaction of O2(A) and O2 do not indirectly lead to destruction of N2O.

Optical characteristics of a RF DBD plasma jet in various {Ar}/ {O}_{2}Ar/O2 mixtures

NASA Astrophysics Data System (ADS)

Falahat, A.; Ganjovi, A.; Taraz, M.; Ravari, M. N. Rostami; Shahedi, A.

2018-02-01

In this paper, using the optical emission spectroscopy (OES) technique, the optical characteristics of a radiofrequency (RF) plasma jet are examined. The Ar/O2 mixture is taken as the operational gas and, the Ar percentage in the Ar/O2 mixture is varied from 70% to 95%. Using the optical emission spectrum analysis of the RF plasma jet, the excitation temperature is determined based on the Boltzmann plot method. The electron density in the plasma medium of the RF plasma jet is obtained by the Stark broadening of the hydrogen Balmer H_{β }. It is mostly seen that, the radiation intensity of Ar 4p→ 4s transitions at higher argon contributions in Ar/O2 mixture is higher. It is found that, at higher Ar percentages, the emission intensities from atomic oxygen (O) are higher and, the line intensities from the argon atoms and ions including O atoms linearly increase. It is observed that the quenching of Ar^{*} with O2 results in higher O species with respect to O2 molecules. In addition, at higher percentages of Ar in the Ar/O2 mixture, while the excitation temperature is decreased, the electron density is increased.

Water plasma functionalized CNTs/MnO2 composites for supercapacitors.

PubMed

Hussain, Shahzad; Amade, Roger; Jover, Eric; Bertran, Enric

2013-01-01

A water plasma treatment applied to vertically-aligned multiwall carbon nanotubes (CNTs) synthesized by plasma enhanced chemical vapour deposition gives rise to surface functionalization and purification of the CNTs, along with an improvement of their electrochemical properties. Additional increase of their charge storage capability is achieved by anodic deposition of manganese dioxide lining the surface of plasma-treated nanotubes. The morphology (nanoflower, layer, or needle-like structure) and oxidation state of manganese oxide depend on the voltage window applied during charge-discharge measurements and are found to be key points for improved efficiency of capacitor devices. MnO2/CNTs nanocomposites exhibit an increase in their specific capacitance from 678 Fg(-1), for untreated CNTs, up to 750 Fg(-1), for water plasma-treated CNTs.

Surface-wave-sustained plasma torch for water treatment

NASA Astrophysics Data System (ADS)

Marinova, P.; Benova, E.; Todorova, Y.; Topalova, Y.; Yotinov, I.; Atanasova, M.; Krcma, F.

2018-02-01

In this study the effects of water treatment by surface-wave-sustained plasma torch at 2.45 GHz are studied. Changes in two directions are obtained: (i) changes of the plasma characteristics during the interaction with the water; (ii) water physical and chemical characteristics modification as a result of the plasma treatment. In addition, deactivation of Gram positive and Gram negative bacteria in suspension are registered. A number of charged and excited particles from the plasma interact with the water. As a result the water chemical and physical characteristics such as the water conductivity, pH, H2O2 concentration are modified. It is observed that the effect depends on the treatment time, wave power, and volume of the treated liquid. At specific discharge conditions determined by the wave power, gas flow, discharge tube radius, thickness and permittivity, the surface-wave-sustained discharge (SWD) operating at atmospheric pressure in argon is strongly non-equilibrium with electron temperature T e much higher than the temperature of the heavy particles (gas temperature T g). It has been observed that SWD argon plasma with T g close to the room temperature is able to produce H2O2 in the water with high efficiency at short exposure times (less than 60 sec). The H2O2 decomposition is strongly dependant on the temperature thus the low operating gas temperature is crucial for the H2O2 production efficiency. After scaling up the device, the observed effects can be applied for the waste water treatment in different facilities. The innovation will be useful especially for the treatment of waters and materials for medical application.

Isotopomer analysis of production and consumption mechanisms of N2O and CH4 in an advanced wastewater treatment system.

PubMed

Toyoda, Sakae; Suzuki, Yuuri; Hattori, Shohei; Yamada, Keita; Fujii, Ayako; Yoshida, Naohiro; Kouno, Rina; Murayama, Kouki; Shiomi, Hiroshi

2011-02-01

Wastewater treatment processes are believed to be anthropogenic sources of nitrous oxide (N(2)O) and methane (CH(4)). However, few studies have examined the mechanisms and controlling factors in production of these greenhouse gases in complex bacterial systems. To elucidate production and consumption mechanisms of N(2)O and CH(4) in microbial consortia during wastewater treatment and to characterize human waste sources, we measured their concentrations and isotopomer ratios (elemental isotope ratios and site-specific N isotope ratios in asymmetric molecules of NNO) in water and gas samples collected by an advanced treatment system in Tokyo. Although the estimated emissions of N(2)O and CH(4) from the system were found to be lower than those from the typical treatment systems reported before, water in biological reaction tanks was supersaturated with both gases. The concentration of N(2)O, produced mainly by nitrifier-denitrification as indicated by isotopomer ratios, was highest in the oxic tank (ca. 4000% saturation). The dissolved CH(4) concentration was highest in in-flow water (ca. 3000% saturation). It decreased gradually during treatment. Its carbon isotope ratio indicated that the decrease resulted from bacterial CH(4) oxidation and that microbial CH(4) production can occur in anaerobic and settling tanks.

[Effects of diurnal warming on soil N2O emission in soybean field].

PubMed

Hu, Zheng-Hua; Zhou, Ying-Ping; Cui, Hai-Ling; Chen, Shu-Tao; Xiao, Qi-Tao; Liu, Yan

2013-08-01

To investigate the impact of experimental warming on N2O emission from soil of soybean field, outdoor experiments with simulating diurnal warming were conducted, and static dark chamber-gas chromatograph method was used to measure N2O emission fluxes. Results indicated that: the diurnal warming did not change the seasonal pattern of N2O emissions from soil. In the whole growing season, comparing to the control treatment (CK), the warming treatment (T) significantly enhanced the N2O flux and the cumulative amount of N2O by 17.31% (P = 0.019), and 20.27% (P = 0.005), respectively. The significant correlations were found between soil N2O emission and soil temperature, moisture. The temperature sensitivity values of soil N2O emission under CK and T treatments were 3.75 and 4.10, respectively. In whole growing stage, T treatment significantly increased the crop aboveground and total biomass, the nitrate reductase activity, and total nitrogen in leaves, while significantly decreased NO3(-) -N content in leaves. T treatment significantly increased soil NO3(-) -N content, but had no significant effect on soil organic carbon and total nitrogen contents. The results of this study suggested that diurnal warming enhanced N2O emission from soil in soybean field.

Sterilization/disinfection of medical devices using plasma: the flowing afterglow of the reduced-pressure N2-O2 discharge as the inactivating medium

NASA Astrophysics Data System (ADS)

Moisan, Michel; Boudam, Karim; Carignan, Denis; Kéroack, Danielle; Levif, Pierre; Barbeau, Jean; Séguin, Jacynthe; Kutasi, Kinga; Elmoualij, Benaïssa; Thellin, Olivier; Zorzi, Willy

2013-07-01

Potential sterilization/disinfection of medical devices (MDs) is investigated using a specific plasma process developed at the Université de Montréal over the last decade. The inactivating medium of the microorganisms is the flowing afterglow of a reduced-pressure N2-O2 discharge, which provides, as the main biocidal agent, photons over a broad ultraviolet (UV) wavelength range. The flowing afterglow is considered less damaging to MDs than the discharge itself. Working at gas pressures in the 400—700 Pa range (a few torr) ensures, through species diffusion, the uniform filling of large volume chambers with the species outflowing from the discharge, possibly allowing batch processing within them. As a rule, bacterial endospores are used as bio-indicators (BI) to validate sterilization processes. Under the present operating conditions, Bacillus atrophaeus is found to be the most resistant one and is therefore utilized as BI. The current paper reviews the main experimental results concerning the operation and characterization of this sterilizer/disinfector, updating and completing some of our previously published papers. It uses modeling results as guidelines, which are particularly useful when the corresponding experimental data are not (yet) available, hopefully leading to more insight into this plasma afterglow system. The species flowing out of the N2-O2 discharge can be divided into two groups, depending on the time elapsed after they left the discharge zone as they move toward the chamber, namely the early afterglow and the late afterglow. The early flowing afterglow from a pure N2 discharge (also called pink afterglow) is known to be comprised of N2+ and N4+ ions. In the present N2-O2 mixture discharge, NO+ ions are additionally generated, with a lifetime that extends over a longer period than that of the nitrogen molecular ions. We shall suppose that the disappearance of the NO+ ions marks the end of the early afterglow regime, thereby stressing our intent

Infrared spectra of N2O-(ortho-D2)N and N2O-(HD)N clusters trapped in bulk solid parahydrogen.

PubMed

Lorenz, Britney D; Anderson, David T

2007-05-14

High-resolution infrared spectra of the clusters N2O-(ortho-D2)N and N2O-(HD)N, N=1-4, isolated in bulk solid parahydrogen at liquid helium temperatures are studied in the 2225 cm-1 region of the nu3 antisymmetric stretch of N2O. The clusters form during vapor deposition of separate gas streams of a precooled hydrogen mixture (ortho-D2para-H2 or HDpara-H2) and N2O onto a BaF2 optical substrate held at approximately 2.5 K in a sample-in-vacuum liquid helium cryostat. The cluster spectra reveal the N2O nu3 vibrational frequency shifts to higher energy as a function of N, and the shifts are larger for ortho-D2 compared to HD. These vibrational shifts result from the reduced translational zero-point energy for N2O solvated by the heavier hydrogen isotopomers. These spectra allow the N=0 peak at 2221.634 cm-1, corresponding to the nu3 vibrational frequency of N2O isolated in pure solid parahydrogen, to be assigned. The intensity of the N=0 absorption feature displays a strong temperature dependence, suggesting that significant structural changes occur in the parahydrogen solvation environment of N2O in the 1.8-4.9 K temperature range studied.

Ultradeep electron cyclotron resonance plasma etching of GaN

DOE PAGES

Harrison, Sara E.; Voss, Lars F.; Torres, Andrea M.; ...

2017-07-25

Here, ultradeep (≥5 μm) electron cyclotron resonance plasma etching of GaN micropillars was investigated. Parametric studies on the influence of the applied radio-frequency power, chlorine content in a Cl 2/Ar etch plasma, and operating pressure on the etch depth, GaN-to-SiO 2 selectivity, and surface morphology were performed. Etch depths of >10 μm were achieved over a wide range of parameters. Etch rates and sidewall roughness were found to be most sensitive to variations in RF power and % Cl 2 in the etch plasma. Selectivities of >20:1 GaN:SiO 2 were achieved under several chemically driven etch conditions where a maximummore » selectivity of ~39:1 was obtained using a 100% Cl 2 plasma. The etch profile and (0001) surface morphology were significantly influenced by operating pressure and the chlorine content in the plasma. Optimized etch conditions yielded >10 μm tall micropillars with nanometer-scale sidewall roughness, high GaN:SiO 2 selectivity, and nearly vertical etch profiles. These results provide a promising route for the fabrication of ultradeep GaN microstructures for use in electronic and optoelectronic device applications. In addition, dry etch induced preferential crystallographic etching in GaN microstructures is also demonstrated, which may be of great interest for applications requiring access to non- or semipolar GaN surfaces.« less

Water Plasma Functionalized CNTs/MnO2 Composites for Supercapacitors

PubMed Central

Hussain, Shahzad; Jover, Eric; Bertran, Enric

2013-01-01

A water plasma treatment applied to vertically-aligned multiwall carbon nanotubes (CNTs) synthesized by plasma enhanced chemical vapour deposition gives rise to surface functionalization and purification of the CNTs, along with an improvement of their electrochemical properties. Additional increase of their charge storage capability is achieved by anodic deposition of manganese dioxide lining the surface of plasma-treated nanotubes. The morphology (nanoflower, layer, or needle-like structure) and oxidation state of manganese oxide depend on the voltage window applied during charge-discharge measurements and are found to be key points for improved efficiency of capacitor devices. MnO2/CNTs nanocomposites exhibit an increase in their specific capacitance from 678 Fg−1, for untreated CNTs, up to 750 Fg−1, for water plasma-treated CNTs. PMID:24348189

Vibrational spectroscopy of NO + (H2O)n: Evidence for the intracluster reaction NO + (H2O)n --> H3O + (H2O)n - 2 (HONO) at n => 4

NASA Astrophysics Data System (ADS)

Choi, Jong-Ho; Kuwata, Keith T.; Haas, Bernd-Michael; Cao, Yibin; Johnson, Matthew S.; Okumura, Mitchio

1994-05-01

Infrared spectra of mass-selected clusters NO+(H2O)n for n=1 to 5 were recorded from 2700 to 3800 cm-1 by vibrational predissociation spectroscopy. Vibrational frequencies and intensities were also calculated for n=1 and 2 at the second-order Møller-Plesset (MP2) level, to aid in the interpretation of the spectra, and at the singles and doubles coupled cluster (CCSD) level energies of n=1 isomers were computed at the MP2 geometries. The smaller clusters (n=1 to 3) were complexes of H2O ligands bound to a nitrosonium ion NO+ core. They possessed perturbed H2O stretch bands and dissociated by loss of H2O. The H2O antisymmetric stretch was absent in n=1 and gradually increased in intensity with n. In the n=4 clusters, we found evidence for the beginning of a second solvation shell as well as the onset of an intracluster reaction that formed HONO. These clusters exhibited additional weak, broad bands between 3200 and 3400 cm-1 and two new minor photodissociation channels, loss of HONO and loss of two H2O molecules. The reaction appeared to go to completion within the n=5 clusters. The primary dissociation channel was loss of HONO, and seven vibrational bands were observed. From an analysis of the spectrum, we concluded that the n=5 cluster rearranged to form H3O+(H2O)3(HONO), i.e., an adduct of the reaction products.

Advanced nanoporous TiO2 photocatalysts by hydrogen plasma for efficient solar-light photocatalytic application

NASA Astrophysics Data System (ADS)

An, Ha-Rim; Park, So Young; Kim, Hyeran; Lee, Che Yoon; Choi, Saehae; Lee, Soon Chang; Seo, Soonjoo; Park, Edmond Changkyun; Oh, You-Kwan; Song, Chan-Geun; Won, Jonghan; Kim, Youn Jung; Lee, Jouhahn; Lee, Hyun Uk; Lee, Young-Chul

2016-07-01

We report an effect involving hydrogen (H2)-plasma-treated nanoporous TiO2(H-TiO2) photocatalysts that improve photocatalytic performance under solar-light illumination. H-TiO2 photocatalysts were prepared by application of hydrogen plasma of assynthesized TiO2(a-TiO2) without annealing process. Compared with the a-TiO2, the H-TiO2 exhibited high anatase/brookite bicrystallinity and a porous structure. Our study demonstrated that H2 plasma is a simple strategy to fabricate H-TiO2 covering a large surface area that offers many active sites for the extension of the adsorption spectra from ultraviolet (UV) to visible range. Notably, the H-TiO2 showed strong ·OH free-radical generation on the TiO2 surface under both UV- and visible-light irradiation with a large responsive surface area, which enhanced photocatalytic efficiency. Under solar-light irradiation, the optimized H-TiO2 120(H2-plasma treatment time: 120 min) photocatalysts showed unprecedentedly excellent removal capability for phenol (Ph), reactive black 5(RB 5), rhodamine B (Rho B) and methylene blue (MB) — approximately four-times higher than those of the other photocatalysts (a-TiO2 and P25) — resulting in complete purification of the water. Such well-purified water (>90%) can utilize culturing of cervical cancer cells (HeLa), breast cancer cells (MCF-7), and keratinocyte cells (HaCaT) while showing minimal cytotoxicity. Significantly, H-TiO2 photocatalysts can be mass-produced and easily processed at room temperature. We believe this novel method can find important environmental and biomedical applications.

Advanced nanoporous TiO2 photocatalysts by hydrogen plasma for efficient solar-light photocatalytic application

PubMed Central

An, Ha-Rim; Park, So Young; Kim, Hyeran; Lee, Che Yoon; Choi, Saehae; Lee, Soon Chang; Seo, Soonjoo; Park, Edmond Changkyun; Oh, You-Kwan; Song, Chan-Geun; Won, Jonghan; Kim, Youn Jung; Lee, Jouhahn; Lee, Hyun Uk; Lee, Young-Chul

2016-01-01

We report an effect involving hydrogen (H2)-plasma-treated nanoporous TiO2(H-TiO2) photocatalysts that improve photocatalytic performance under solar-light illumination. H-TiO2 photocatalysts were prepared by application of hydrogen plasma of assynthesized TiO2(a-TiO2) without annealing process. Compared with the a-TiO2, the H-TiO2 exhibited high anatase/brookite bicrystallinity and a porous structure. Our study demonstrated that H2 plasma is a simple strategy to fabricate H-TiO2 covering a large surface area that offers many active sites for the extension of the adsorption spectra from ultraviolet (UV) to visible range. Notably, the H-TiO2 showed strong ·OH free-radical generation on the TiO2 surface under both UV- and visible-light irradiation with a large responsive surface area, which enhanced photocatalytic efficiency. Under solar-light irradiation, the optimized H-TiO2 120(H2-plasma treatment time: 120 min) photocatalysts showed unprecedentedly excellent removal capability for phenol (Ph), reactive black 5(RB 5), rhodamine B (Rho B) and methylene blue (MB) — approximately four-times higher than those of the other photocatalysts (a-TiO2 and P25) — resulting in complete purification of the water. Such well-purified water (>90%) can utilize culturing of cervical cancer cells (HeLa), breast cancer cells (MCF-7), and keratinocyte cells (HaCaT) while showing minimal cytotoxicity. Significantly, H-TiO2 photocatalysts can be mass-produced and easily processed at room temperature. We believe this novel method can find important environmental and biomedical applications. PMID:27406992

Mass spectrometric studies of SiO2 deposition in an indirect plasma enhanced LPCVD system

NASA Technical Reports Server (NTRS)

Iyer, R.; Lile, D. L.; Mcconica, C. M.

1993-01-01

Reaction pathways for the low temperature deposition of SiO2 from silane and indirect plasma-excited oxygen-nitrogen mixtures are proposed based on experimental evidence gained from mass spectrometry in an indirect plasma enhanced chemical vapor deposition chamber. It was observed that about 80-85 percent of the silane was oxidized to byproduct hydrogen and only about 15-20 percent to water. Such conversion levels have led us to interpret that silanol (SiH3OH) could be the precursor for SiO2 film deposition, rather than siloxane /(SiH3)2O/ which has generally been cited in the literature. From mass spectrometry, we have also shown the effects of the plasma, and of mixing small amounts of N2 with the oxygen flow, in increasing the deposition rate of SiO2. Free radical reaction of nitric oxide, synthesized from the reaction of oxygen and nitrogen in the plasma chamber, and an *ncrease in atomic oxygen concentration, are believed to be the reasons for these SiO2 deposition rate increases. Through mass spectrometry we have, in addition, been able to identify products, presumably originating from terminating reactions, among a sequence of chemical reactions proposed for the deposition of SiO2.

Quantification of vosaroxin and its metabolites N-desmethylvosaroxin and O-desmethylvosaroxin in human plasma and urine using high-performance liquid chromatography-tandem mass spectrometry.

PubMed

Nijenhuis, C M; Lucas, L; Rosing, H; Jamieson, G; Fox, J A; Schellens, J H M; Beijnen, J H

2016-08-01

Vosaroxin is a first-in-class anticancer quinolone derivative topoisomerase II inhibitor that is currently in development in combination with cytarabine for the treatment of acute myeloid leukemia (AML). To investigate vosaroxin pharmacokinetics (PK) in patients, liquid chromatography tandem mass spectrometry (LC-MS/MS) assays to quantify vosaroxin and the two metabolites N-desmethylvosaroxin and O-desmethylvosaroxin in human plasma and urine were developed and validated. Immediately after collection the samples were stored at -80°C. Prior to analysis, the plasma samples were subjected to protein precipitation and the urine samples were diluted. For both assays the reconstituted extracts were injected on a Symmetry Shield RP8 column and gradient elution was applied using 0.1% formic acid in water and acetonitrile-methanol (50:50, v/v). Analyses were performed with a triple quadruple mass spectrometer in positive-ion mode. A deuterated isotope of vosaroxin was used as internal standard for the quantification. The validated assays quantify vosaroxin and N-desmethylvosaroxin in the concentration range of 2-500ng/mL in plasma and urine. For O-desmethylvosaroxin the concentration range of 4-500ng/mL in plasma and urine was validated. Dilution integrity experiments show that samples can be diluted 25 fold in control matrix prior to analysis. The expanded concentration range for plasma and urine for vosaroxin and N-desmethylvosaroxin is therefore from 2 to 15,000ng/mL and in plasma for O-desmethylvosaroxin from 4 to 15,000ng/mL. Copyright © 2016 Elsevier B.V. All rights reserved.

Studies of CW lasing action in CO2-CO, N2O-CO, CO2-H2O, and N2O-H2O mixtures pumped by blackbody radiation

NASA Technical Reports Server (NTRS)

Abel, Robert W.; Christiansen, Walter H.; Li, Jian-Guo

1988-01-01

A proof of principle experiment to evaluate the efficacy of CO and H2O in increasing the power output for N2O and CO2 lasing mixtures has been conducted and theoretically analyzed for a blackbody radiation-pumped laser. The results for N2O-CO, CO2-CO, N2O-H2O and CO2-H2O mixtures are presented. Additions of CO to the N2O lasant increased power up to 28 percent for N2O laser mixtures, whereas additions of CO to the CO2 lasant, and the addition of H2O to both the CO2 and N2O lasants, resulted in decreased output power.

Time-dependent one-dimensional simulation of atmospheric dielectric barrier discharge in N2/O2/H2O using COMSOL Multiphysics

NASA Astrophysics Data System (ADS)

Sohbatzadeh, F.; Soltani, H.

2018-04-01

The results of time-dependent one-dimensional modelling of a dielectric barrier discharge (DBD) in a nitrogen-oxygen-water vapor mixture at atmospheric pressure are presented. The voltage-current characteristics curves and the production of active species are studied. The discharge is driven by a sinusoidal alternating high voltage-power supply at 30 kV with frequency of 27 kHz. The electrodes and the dielectric are assumed to be copper and quartz, respectively. The current discharge consists of an electrical breakdown that occurs in each half-period. A detailed description of the electron attachment and detachment processes, surface charge accumulation, charged species recombination, conversion of negative and positive ions, ion production and losses, excitations and dissociations of molecules are taken into account. Time-dependent one-dimensional electron density, electric field, electric potential, electron temperature, densities of reactive oxygen species (ROS) and reactive nitrogen species (RNS) such as: O, O-, O+, {O}2^{ - } , {O}2^{ + } , O3, {N}, {N}2^{ + } , N2s and {N}2^{ - } are simulated versus time across the gas gap. The results of this work could be used in plasma-based pollutant degradation devices.

A comparative study on the activity of TiO2 in pulsed plasma under different discharge conditions

NASA Astrophysics Data System (ADS)

Lijuan, DUAN; Nan, JIANG; Na, LU; Kefeng, SHANG; Jie, LI; Yan, WU

2018-05-01

In the present study, a combination of pulsed discharge plasma and TiO2 (plasma/TiO2) has been developed in order to study the activity of TiO2 by varying the discharge conditions of pulsed voltage, discharge mode, air flow rate and solution conductivity. Phenol was used as the chemical probe to characterize the activity of TiO2 in a pulsed discharge system. The experimental results showed that the phenol removal efficiency could be improved by about 10% by increasing the applied voltage. The phenol removal efficiency for three discharge modes in the plasma-discharge-alone system was found to be highest in the spark mode, followed by the spark–streamer mode and finally the streamer mode. In the plasma/TiO2 system, the highest catalytic effect of TiO2 was observed in the spark–streamer discharge mode, which may be attributed to the favorable chemical and physical effects from the spark–streamer discharge mode, such as ultraviolet light, O3, H2O2, pyrolysis, shockwaves and high-energy electrons. Meanwhile, the optimal flow rate and conductivity were 0.05 m3 l‑1 and 10 μS cm‑1, respectively. The main phenolic intermediates were hydroquinone, catechol, and p-benzoquinone during the discharge treatment process. A different phenol degradation pathway was observed in the plasma/TiO2 system as compared to plasma alone. Analysis of the reaction intermediates demonstrated that p-benzoquinone reduction was selectively catalyzed on the TiO2 surface. The effective decomposition of phenol constant (D e) increased from 74.11% to 79.16% when TiO2 was added, indicating that higher phenol mineralization was achieved in the plasma/TiO2 system.

Atomic layer deposition TiO 2-Al 2O 3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

DOE PAGES

Wei, Daming; Edgar, James H.; Briggs, Dayrl P.; ...

2014-10-15

This research focuses on the benefits and properties of TiO 2-Al 2O 3 nano-stack thin films deposited on Ga 2O 3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2, 7.1 nm Al 2O 3 and 2 nm Ga 2O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectronmore » spectroscopy (XPS) depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO 2-Al 2O 3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al 2O 3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 10 11 cm -2. The gate leakage current density (J=2.81× 10 -8 A/cm 2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO 2/Al 2O 3 for serving as the gate oxide on Ga 2O 3/GaN based MOS devices.« less

Atomic layer deposition TiO 2-Al 2O 3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Daming; Edgar, James H.; Briggs, Dayrl P.

This research focuses on the benefits and properties of TiO 2-Al 2O 3 nano-stack thin films deposited on Ga 2O 3/GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films’ structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2, 7.1 nm Al 2O 3 and 2 nm Ga 2O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectronmore » spectroscopy (XPS) depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 minutes at 850°C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nano-stack, as determined by atomic force microscopy. The dielectric constant of TiO 2-Al 2O 3 on Ga2O3/GaN was increased to 12.5 compared to that of pure Al 2O 3 (8~9) on GaN. In addition, the nano-stack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 × 10 11 cm -2. The gate leakage current density (J=2.81× 10 -8 A/cm 2) was low at +1 V gate bias. These results demonstrate the promising potential of plasma ALD deposited TiO 2/Al 2O 3 for serving as the gate oxide on Ga 2O 3/GaN based MOS devices.« less

Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

NASA Astrophysics Data System (ADS)

Minami, Masaki; Tomiya, Shigetaka; Ishikawa, Kenji; Matsumoto, Ryosuke; Chen, Shang; Fukasawa, Masanaga; Uesawa, Fumikatsu; Sekine, Makoto; Hori, Masaru; Tatsumi, Tetsuya

2011-08-01

GaN-based optical devices are fabricated using a GaN/InGaN/GaN sandwiched structure. The effect of radicals, ions, and UV light on the GaN optical properties during Cl2/SiCl4/Ar plasma etching was evaluated using photoluminescence (PL) analysis. The samples were exposed to plasma (radicals, ions, and UV light) using an inductively coupled plasma (ICP) etching system and a plasma ion beam apparatus that can separate the effects of UV and ions both with and without covering the SiO2 window on the surface. Etching damage in an InGaN single quantum well (SQW) was formed by exposing the sample to plasma. The damage, which decreases PL emission intensity, was generated not only by ion beam irradiation but also by UV light irradiation. PL intensity decreased when the thickness of the upper GaN layer was etched to less than 60 nm. In addition, simultaneous irradiation of UV light and ions slightly increased the degree of damage. There seems to be a synergistic effect between the UV light and the ions. For high-quality GaN-based optoelectronics and power devices, UV light must be controlled during etching processes in addition to the etching profile, selectivity, and ion bombardment damage.

The vibration-rotation-tunneling levels of N2-H2O and N2-D2O.

PubMed

Wang, Xiao-Gang; Carrington, Tucker

2015-07-14

In this paper, we report vibration-rotation-tunneling levels of the van der Waals clusters N2-H2O and N2-D2O computed from an ab initio potential energy surface. The only dynamical approximation is that the monomers are rigid. We use a symmetry adapted Lanczos algorithm and an uncoupled product basis set. The pattern of the cluster's levels is complicated by splittings caused by H-H exchange tunneling (larger splitting) and N-N exchange tunneling (smaller splitting). An interesting result that emerges from our calculation is that whereas in N2-H2O, the symmetric H-H tunnelling state is below the anti-symmetric H-H tunnelling state for both K = 0 and K = 1, the order is reversed in N2-D2O for K = 1. The only experimental splitting measurements are the D-D exchange tunneling splittings reported by Zhu et al. [J. Chem. Phys. 139, 214309 (2013)] for N2-D2O in the v2 = 1 region of D2O. Due to the inverted order of the split levels, they measure the sum of the K = 0 and K = 1 tunneling splittings, which is in excellent agreement with our calculated result. Other splittings we predict, in particular those of N2-H2O, may guide future experiments.

The vibration-rotation-tunneling levels of N2-H2O and N2-D2O

NASA Astrophysics Data System (ADS)

Wang, Xiao-Gang; Carrington, Tucker

2015-07-01

In this paper, we report vibration-rotation-tunneling levels of the van der Waals clusters N2-H2O and N2-D2O computed from an ab initio potential energy surface. The only dynamical approximation is that the monomers are rigid. We use a symmetry adapted Lanczos algorithm and an uncoupled product basis set. The pattern of the cluster's levels is complicated by splittings caused by H-H exchange tunneling (larger splitting) and N-N exchange tunneling (smaller splitting). An interesting result that emerges from our calculation is that whereas in N2-H2O, the symmetric H-H tunnelling state is below the anti-symmetric H-H tunnelling state for both K = 0 and K = 1, the order is reversed in N2-D2O for K = 1. The only experimental splitting measurements are the D-D exchange tunneling splittings reported by Zhu et al. [J. Chem. Phys. 139, 214309 (2013)] for N2-D2O in the v2 = 1 region of D2O. Due to the inverted order of the split levels, they measure the sum of the K = 0 and K = 1 tunneling splittings, which is in excellent agreement with our calculated result. Other splittings we predict, in particular those of N2-H2O, may guide future experiments.

Atmospheric plasma sprayed (APS) coatings of Al2O3-TiO2 system for photocatalytic application.

PubMed

Stengl, V; Ageorges, H; Ctibor, P; Murafa, N

2009-05-01

The goal of this study is to examine the photocatalytic ability of coatings produced by atmospheric plasma spraying (APS). The plasma gun used is a common gas-stabilized plasma gun (GSP) working with a d.c. current and a mixture of argon and hydrogen as plasma-forming gas. The TiO(2) powders are particles of about 100 nm which were agglomerated to a mean size of about 55 mum, suitable for spraying. Composition of the commercial powder is 13 wt% of TiO(2) in Al(2)O(3), whereas also in-house prepared powder with the same nominal composition but with agglomerated TiO(2) and conventional fused and crushed Al(2)O(3) was sprayed. The feedstock materials used for this purpose are alpha-alumina and anatase titanium dioxide. The coatings are analyzed by scanning electron microscopy (SEM), energy dispersion probe (EDS) and X-ray diffraction. Photocatalytic degradation of acetone is quantified for various coatings. All plasma sprayed coatings show a lamellar structure on cross section, as typical for this process. Anatase titania from feedstock powder is converted into rutile titania and alpha-alumina partly to gamma-alumina. Coatings are proven to catalyse the acetone decomposition when irradiated by UV rays.

Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Hyungjoo; Zhu Weiye; Liu Lei

2013-05-15

Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorine-containing plasmas, under isotropic etching conditions. Etching rates for blanket films were measured in-situ using optical emission of the N{sub 2} (C{sup 3}{Pi}{sub u}{yields}B{sup 3}{Pi}{sub g}) bandhead at 337 nm to determine the etching time, and transmission electron microscopy to determine the starting film thickness. The etching selectivity in Cl{sub 2}/He or HCl/He plasmas was poor (<2:1). There was a window of very high selectivity of etching TiN over TaN by adding small amounts (<1%) of O{sub 2} in the Cl{sub 2}/He plasma. Reverse selectivity (10:1 of TaNmore » etching over TiN) was observed when adding small amounts of O{sub 2} to the HCl/He plasma. Results are explained on the basis of the volatility of plausible reaction products.« less

Time-Resolved Optical Emission Spectroscopy Diagnosis of CO2 Laser-Produced SnO2 Plasma

NASA Astrophysics Data System (ADS)

Lan, Hui; Wang, Xinbing; Zuo, Duluo

2016-09-01

The spectral emission and plasma parameters of SnO2 plasmas have been investigated. A planar ceramic SnO2 target was irradiated by a CO2 laser with a full width at half maximum of 80 ns. The temporal behavior of the specific emission lines from the SnO2 plasma was characterized. The intensities of Sn I and Sn II lines first increased, and then decreased with the delay time. The results also showed a faster decay of Sn I atoms than that of Sn II ionic species. The temporal evolutions of the SnO2 plasma parameters (electron temperature and density) were deduced. The measured temperature and density of SnO2 plasma are 4.38 eV to 0.5 eV and 11.38×1017 cm-3 to 1.1×1017 cm-3, for delay times between 0.1 μs and 2.2 μs. We also investigated the effect of the laser pulse energy on SnO2 plasma. supported by National Natural Science Foundation of China (No. 11304235) and the Director Fund of WNLO

Quantifying N2O reduction to N2 based on N2O isotopocules - validation with independent methods (helium incubation and 15N gas flux method)

NASA Astrophysics Data System (ADS)

Lewicka-Szczebak, Dominika; Augustin, Jürgen; Giesemann, Anette; Well, Reinhard

2017-02-01

Stable isotopic analyses of soil-emitted N2O (δ15Nbulk, δ18O and δ15Nsp = 15N site preference within the linear N2O molecule) may help to quantify N2O reduction to N2, an important but rarely quantified process in the soil nitrogen cycle. The N2O residual fraction (remaining unreduced N2O, rN2O) can be theoretically calculated from the measured isotopic enrichment of the residual N2O. However, various N2O-producing pathways may also influence the N2O isotopic signatures, and hence complicate the application of this isotopic fractionation approach. Here this approach was tested based on laboratory soil incubations with two different soil types, applying two reference methods for quantification of rN2O: helium incubation with direct measurement of N2 flux and the 15N gas flux method. This allowed a comparison of the measured rN2O values with the ones calculated based on isotopic enrichment of residual N2O. The results indicate that the performance of the N2O isotopic fractionation approach is related to the accompanying N2O and N2 source processes and the most critical is the determination of the initial isotopic signature of N2O before reduction (δ0). We show that δ0 can be well determined experimentally if stable in time and then successfully applied for determination of rN2O based on δ15Nsp values. Much more problematic to deal with are temporal changes of δ0 values leading to failure of the approach based on δ15Nsp values only. For this case, we propose here a dual N2O isotopocule mapping approach, where calculations are based on the relation between δ18O and δ15Nsp values. This allows for the simultaneous estimation of the N2O-producing pathways' contribution and the rN2O value.

Study on plasma pre-functionalized PVC film grafted with TiO2/PVP to improve blood compatible and antibacterial properties

NASA Astrophysics Data System (ADS)

Suganya, Arjunan; Shanmugavelayutham, Gurusamy; Serra Rodríguez, Carmen

2017-04-01

Research into the design of new biopolymers/polymer functionalized with nanoparticles is of tremendous interest to the medical sector, particularly with regard to blood-contacting devices. In this present study, a steady blood compatible and active antibacterial coating was fabricated by the grafting of titanium dioxide (TiO2)/polyvinylpyyrolidone (PVP) onto a polyvinyl chloride (PVC) film surface via the direct-current glow discharge plasma method. To enhance the chemical interaction between TiO2/PVP and PVC, the surfaces of the PVC films were functionalized by different plasmas (air, argon, and oxygen) before coating. In this study, the plasma parameters were varied, such as treatment time of about 5-20 min for a constant power of 100 W, potential 300 V, and a constant gas pressure of 2 Pa for air, argon, and oxygen gas environment. Then, the different plasma treatments on the PVC films, TiO2/PVP were grafted using a simple dip-coating method. In addition, the TiO2/PVP-grafted PVC films were characterized by contact angle, attenuated total reflectance Fourier transform infrared spectroscopy, field-emission scanning electron microscope, and x-ray photo electron spectroscopy. Importantly, TiO2/PVP is grafted onto the PVC surface due to the plasma-based retained functionality and demonstrates adhesive efficiency, which was observed by XPS. The bio-stability of the TiO2/PVP-modified PVC film was evaluated by in vitro platelet activation analysis and protein adsorption analysis. Then, the antibacterial properties were evaluated by the agar diffusion method against Escherichia coli. The result reveals that the grafting of TiO2/PVP was slightly higher for the 15 min oxygen plasma-functionalized PVC, which significantly decreases the platelet adhesion and protein adsorption. Moreover, the antibacterial properties of the 15 min oxygen plasma-functionalized PVC with TiO2/PVP-grafted film is also greatly improved compared with an air- and argon-functionalized surface

Effect of substrate surface treatment on electrochemically assisted photocatalytic activity of N-S co-doped TiO2 films

NASA Astrophysics Data System (ADS)

Parada-Gamboa, N. J.; Pedraza-Avella, J. A.; Meléndez, A. M.

2017-01-01

To investigate whether different metal surface treatments, performed on meshes of stainless steel 304 and titanium, affect the photocatalytic activity (PCA) of supported modified anodic TiO2 films, metallic substrates were coated with titanium isopropoxide sol-gel precursor modified with thiourea. Substrates were pretreated by some of the following techniques: a) sandblasting, b) pickling, c) hydroxylation and d) passivation. The as-prepared electrode materials were characterized by X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), and voltammetry in the dark and under light UVA irradiation. PCA of modified N-S-TiO2 electrodes was evaluated by electrochemically assisted photocatalytic degradation of methyl orange. The results of XPS revealed that N and S were incorporated into the lattice of TiO2. FESEM showed that surface roughness and thickness of films varies depending on surface treatment. Voltammetric and XPS characterization of N-S co-doped TiO2 films supported on stainless steel revealed that their surface contains alpha-Fe2O3/FeOOH. Accordingly, iron contamination of the films coming from stainless steel was detrimental to the degradation of methyl orange. Prior to sol-gel coating process, sandblasting followed by nitric acid passivation for stainless steel or hydrofluoric acid pickling process in the case of titanium improved the PCA of N-S co-doped TiO2 films.

Effects of O 2 plasma and UV-O 3 assisted surface activation on high sensitivity metal oxide functionalized multiwalled carbon nanotube CH 4 sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Humayun, Md Tanim; Sainato, Michela; Divan, Ralu

We present a comparative analysis of UV-O 3 (UVO) and O 2 plasma-based surface activation processes of multi-walled carbon nanotubes (MWCNTs) enabling highly effective functionalization with metal oxide nanocrystals (MONCs). Experimental results from transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy show that by forming COOH (carboxyl), C-OH (hydroxyl), and C=O (carbonyl) groups on the MWCNT surface that act as active nucleation sites, O 2 plasma and UVO-based dry pre-treatment techniques greatly enhance the affinity between MWCNT surface and the functionalizing MONCs. MONCs, such as ZnO and SnO 2, deposited by atomic layermore » deposition (ALD) technique, were implemented as the functionalizing material following UVO and O 2 plasma activation of MWCNTs. In conclusion, a comparative study on the relative resistance changes of O 2 plasma and UVO activated MWCNT functionalized with MONC in the presence of 10 ppm methane (CH 4) in air, is presented as well.« less

Effects of O 2 plasma and UV-O 3 assisted surface activation on high sensitivity metal oxide functionalized multiwalled carbon nanotube CH 4 sensors

DOE PAGES

Humayun, Md Tanim; Sainato, Michela; Divan, Ralu; ...

2017-07-28

We present a comparative analysis of UV-O 3 (UVO) and O 2 plasma-based surface activation processes of multi-walled carbon nanotubes (MWCNTs) enabling highly effective functionalization with metal oxide nanocrystals (MONCs). Experimental results from transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy show that by forming COOH (carboxyl), C-OH (hydroxyl), and C=O (carbonyl) groups on the MWCNT surface that act as active nucleation sites, O 2 plasma and UVO-based dry pre-treatment techniques greatly enhance the affinity between MWCNT surface and the functionalizing MONCs. MONCs, such as ZnO and SnO 2, deposited by atomic layermore » deposition (ALD) technique, were implemented as the functionalizing material following UVO and O 2 plasma activation of MWCNTs. In conclusion, a comparative study on the relative resistance changes of O 2 plasma and UVO activated MWCNT functionalized with MONC in the presence of 10 ppm methane (CH 4) in air, is presented as well.« less

A comparison of the C III, O V, F VI, and Ne VII Delta n = 0 (2-2) line emissions from a laboratory plasma with theoretical predictions and astrophysical observations

NASA Technical Reports Server (NTRS)

Finkenthal, M.; Yu, . L.; Lippmann, S.; Huang, L. K.; Moos, H. W.; Stratton, B. C.; Bhatia, A. K.

1987-01-01

Spectra of the Delta n = 0 (2-2) transitions of Be I-like ions, C III, O V, F VI, and Ne VII emitted from the TEXT tokamak, were measured with photometrically calibrated instrumentation and compared to the predictions of several models which differ in their treatment of electron impact excitation, using either the distorted wave or R-matrix approach. It was found that the ions from C III to Ne VII were located near the edge of the plasma, at densities between 10 to the 12th and 13th/cu cm. The experimental line ratios were compared with several sets of computations. Agreement is obtained between the experimental data and computations by using the R-matrix technique. This leads to the conclusion that the effect resonances must be included in collision strength calculations, particularly at low nuclear charge. The results show that the line ratios studied may be used with confidence as electron density diagnostics for laboratory or astrophysical plasmas.

Ti n O2n-1-Coated Li4Ti5O12 Composite Anode Material for Lithium-Ion Batteries

NASA Astrophysics Data System (ADS)

Zhang, Xiaoyan; Xu, Wen; Liu, Wanying; Li, Xing; Zhong, Xiaoxi; Lin, Yuanhua

2018-01-01

In an effort to enhance the rate capability of Li4Ti5O12, the Ti n O2n-1-coated Li4Ti5O12 (Li4Ti5O12-Ti n O2n-1, 3 < n < 10) composite has been synthesized through a sol-gel process followed by heat treatment in H2 atmosphere. Compared with pure Li4Ti5O12, Li4Ti5O12-Ti n O2n-1 composite shows higher specific capacity, better rate capability and cycle stability. The initial discharge capacity of the Li4Ti5O12-Ti n O2n-1 composite electrode is 171.2 mAh g-1 at 0.2°C, and 103.8 mAh g-1 at 20°C. Moreover, the discharge capacity remains 79.5 mAh g-1 after 100 cycles at 20°C with a capacity loss of 23.4%. The improved rate capacity and cycling stability clarify the positive effects of Ti n O2n-1 coating layer in Li4Ti5O12-Ti n O2n-1 composite as an anode material for lithium ion batteries.

Preparation of YBa2Cu3O7 High Tc Superconducting Coatings by Plasma Spraying

NASA Astrophysics Data System (ADS)

Danroc, J.; Lacombe, J.

The following sections are included: * INTRODUCTION * THE COMPOUND YBa2Cu3O7-δ * Structure * Critical temperature * Critical current density * Phase equilibria in the YBaCuO system * PREPARATION OF YBa2Cu3O7 COATINGS * General organisation of the preparation process * The powder * Hot plasma spraying of YBa2Cu3O7 * The post-spraying thermal treatment * CHARACTERISTICS OF THE YBa2Cu3O7-δ COATINGS * Chemical composition * Crystalline structure * Morphology of the coatings * Electrical and magnetic characteristics * Conclusion * REFERENCES

Enhanced Dispersion of TiO2 Nanoparticles in a TiO2/PEDOT:PSS Hybrid Nanocomposite via Plasma-Liquid Interactions

NASA Astrophysics Data System (ADS)

Liu, Yazi; Sun, Dan; Askari, Sadegh; Patel, Jenish; Macias-Montero, Manuel; Mitra, Somak; Zhang, Richao; Lin, Wen-Feng; Mariotti, Davide; Maguire, Paul

2015-10-01

A facile method to synthesize a TiO2/PEDOT:PSS hybrid nanocomposite material in aqueous solution through direct current (DC) plasma processing at atmospheric pressure and room temperature has been demonstrated. The dispersion of the TiO2 nanoparticles is enhanced and TiO2/polymer hybrid nanoparticles with a distinct core shell structure have been obtained. Increased electrical conductivity was observed for the plasma treated TiO2/PEDOT:PSS nanocomposite. The improvement in nanocomposite properties is due to the enhanced dispersion and stability in liquid polymer of microplasma treated TiO2 nanoparticles. Both plasma induced surface charge and nanoparticle surface termination with specific plasma chemical species are proposed to provide an enhanced barrier to nanoparticle agglomeration and promote nanoparticle-polymer binding.

Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

NASA Astrophysics Data System (ADS)

Lapeyrade, Mickael; Alamé, Sabine; Glaab, Johannes; Mogilatenko, Anna; Unger, Ralph-Stephan; Kuhn, Christian; Wernicke, Tim; Vogt, Patrick; Knauer, Arne; Zeimer, Ute; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

2017-09-01

In order to understand the electrical properties of V/Al/Ni/Au metal contacts to Si-doped Al0.75Ga0.25N layers, X-ray photoelectron spectroscopy analysis was performed on differently treated AlGaN:Si surfaces before metal deposition, and transmission electron microscopy was used to study the semiconductor-metal interface after contact annealing at 900 °C. Cl2 plasma etching of AlGaN increases the aluminum/nitrogen ratio at the surface, and Al oxide or oxynitride is always formed by any surface treatment applied after etching. After contact annealing, a complex interface structure including amorphous AlOx and different metal phases such as Al-Au-Ni, V-Al, and V2N were found. The electrical properties of the contacts were determined by thermionic emission and/or thermionic field emission in the low voltage regime. Nearly ohmic contacts on AlGaN surfaces exposed to a Cl2 plasma were only obtained by annealing the sample at a temperature of 815 °C under N2/NH3 prior to metallization. By this treatment, the oxygen contamination on the surface could be minimized, resulting in a larger semiconductor area to be in direct contact with metal phases such as Al-rich Al-Au-Ni or V-Al and leading to a contact resistivity of 2.5 × 10-2 Ω cm2. This treatment can be used to significantly reduce the operating voltage of current deep ultraviolet light emitting diodes which will increase their wall plug efficiency and lower the thermal stress during their operation.

Mitigation of nitrous oxide (N2 O) emission from swine wastewater treatment in an aerobic bioreactor packed with carbon fibers.

PubMed

Yamashita, Takahiro; Yamamoto-Ikemoto, Ryoko; Yokoyama, Hiroshi; Kawahara, Hirofumi; Ogino, Akifumi; Osada, Takashi

2015-03-01

Mitigation of nitrous oxide (N2 O) emission from swine wastewater treatment was demonstrated in an aerobic bioreactor packed with carbon fibers (CF reactor). The CF reactor had a demonstrated advantage in mitigating N2 O emission and avoiding NOx (NO3  + NO2 ) accumulation. The N2 O emission factor was 0.0003 g N2 O-N/gTN-load in the CF bioreactor compared to 0.03 gN2 O-N/gTN-load in an activated sludge reactor (AS reactor). N2 O and CH4 emissions from the CF reactor were 42 g-CO2 eq/m(3) /day, while those from the AS reactor were 725 g-CO2 eq/m(3) /day. The dissolved inorganic nitrogen (DIN) in the CF reactor removed an average of 156 mg/L of the NH4 -N, and accumulated an average of 14 mg/L of the NO3 -N. In contrast, the DIN in the AS reactor removed an average 144 mg/L of the NH4 -N and accumulated an average 183 mg/L of the NO3 -N. NO2 -N was almost undetectable in both reactors. © 2014 Japanese Society of Animal Science.

A comparative study of three-terminal Hanle signals in CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jeong-Hyeon; Cho, B. K., E-mail: chobk@gist.ac.kr; Grünberg Center for Magnetic Nanomaterials, Gwangju Institute of Science and Technology

We performed three-terminal (3T) Hanle measurement for two types of sample series, CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si, with various tunnel resistances. Clear Hanle signal and anomalous scaling between spin resistance-area product and tunnel resistance-area product were observed in CoFe/SiO{sub 2}/n{sup +}-Si devices. In order to explore the origin of the Hanle signal and the impurity-assisted tunneling effect on the Hanle signal in our devices, Hanle measurement in Cu/SiO{sub 2}/n{sup +}-Si devices was performed as well. However, no detectable Hanle signal was observed in Cu/SiO{sub 2}/n{sup +}-Si, even though a lot of samples with various tunnel resistances were studiedmore » in wide temperature and bias voltage ranges. Through a comparative study, it is found that the impurity-assisted tunneling magnetoresistance mechanism would not play a dominant role in the 3T Hanle signal in CoFe/SiO{sub 2}/n{sup +}-Si tunnel junctions, where the SiO{sub 2} was formed by plasma oxidation to minimize impurities.« less

Y2O3-MgO Nano-Composite Synthesized by Plasma Spraying and Thermal Decomposition of Solution Precursors

NASA Astrophysics Data System (ADS)

Muoto, Chigozie Kenechukwu

This research aims to identify the key feedstock characteristics and processing conditions to produce Y2O3-MgO composite coatings with high density and hardness using solution precursor plasma spray (SPPS) and suspension plasma spray (SPS) processes, and also, to explore the phenomena involved in the production of homogenized nano-composite powders of this material system by thermal decomposition of solution precursor mixtures. The material system would find potential application in the fabrication of components for optical applications such as transparent windows. It was shown that a lack of major endothermic events during precursor decomposition and the resultant formation of highly dense particles upon pyrolysis are critical precursor characteristics for the deposition of dense and hard Y2O3-MgO coatings by SPPS. Using these principles, a new Y2O3-MgO precursor solution was developed, which yielded a coating with Vickers hardness of 560 Hv. This was a considerable improvement over the hardness of the coatings obtained using conventional solution precursors, which was as low as 110 Hv. In the thermal decomposition synthesis process, binary solution precursor mixtures of: yttrium nitrate (Y[n]) or yttrium acetate (Y[a]), with magnesium nitrate (Mg[n]) or magnesium acetate (Mg[a]) were used in order to study the effects of precursor chemistry on the structural characteristics of the resultant Y2O3-MgO powders. The phase domains were coarse and distributed rather inhomogeneously in the materials obtained from the Y[n]Mg[n] and Y[a]Mg[a] mixtures; finer and more homogeneously-distributed phase domains were obtained for ceramics produced from the Y[a]Mg[n] and Y[n]Mg[a] mixtures. It was established that these phenomena were related to the thermal characteristics for the decomposition of the precursors and their effect on phase separation during oxide crystallization. Addition of ammonium acetate to the Y[n[Mg[n] mixture changed the endothermic process to exothermic

Investigation of N2O Production from 266 and 532 nm Laser Flash Photolysis of O3/N2/O2 Mixtures

NASA Technical Reports Server (NTRS)

Estupinan, E. G.; Nicovich, J. M.; Li, J.; Cunnold, D. M.; Wine, P. H.

2002-01-01

Tunable diode laser absorption spectroscopy has been employed to measure the amount of N2O produced from laser flash photolysis of O3/N2/O2 mixtures at 266 and 532 nm. In the 532 nm photolysis experiments very little N2O is observed, thus allowing an upper limit yield of 7 x 10(exp -8) to be established for the process O3 + N2 yield N2O + O2, where O3 is nascent O3 that is newly formed via O(3P(sub J)) + O2 recombination (with vibrational excitation near the dissociation energy of O3). The measured upper limit yield is a factor of approx. 600 smaller than a previous literature value and is approximately a factor of 10 below the threshold for atmospheric importance. In the 266 nm photolysis experiments, significant N2O production is observed and the N2O quantum yield is found to increase linearly with pressure over the range 100 - 900 Torr in air bath gas. The source of N2O in the 266 nm photolysis experiments is believed to be the addition reaction O(1D(sub 2)) + N2 + M yields (k(sub sigma)) N2O + M, although reaction of (very short-lived) electronically excited O3 with N2 cannot be ruled out by the available data. Assuming that all observed N2O comes from the O(1D(sub 2)) + N2 + M reaction, the following expression describes the temperature dependence of k(sub sigma) (in its third-order low-pressure limit) that is consistent with the N2O yield data: k(sub sigma) = (2.8 +/- 0.1) x 10(exp -36)(T/300)(sup -(0-88+0.36)) cm(sup 6) molecule(sup -2)/s, where the uncertainties are 2(sigma) and represent precision only. The accuracy of the reported rate coefficients at the 95% confidence level is estimated to be 30 - 40% depending on the temperature. Model calculations suggest that gas phase processes initiated by ozone absorption of a UV photon represent about 1.4% of the currently estimated global source strength of atmospheric N2O. However, these processes could account for a significant fraction of the oxygen mass-independent enrichment observed in atmospheric N2O, and

Long and short term effects of plasma treatment on meristematic plant cells

NASA Astrophysics Data System (ADS)

Puač, N.; Živković, S.; Selaković, N.; Milutinović, M.; Boljević, J.; Malović, G.; Petrović, Z. Lj.

2014-05-01

In this paper, we will present results of plasma treatments of meristematic cells of Daucus carota. Plasma needle was used as an atmospheric pressure/gas composition source of non-equilibrium plasma in all treatments. Activity of antioxidant enzymes superoxide dismutase and catalase was measured immediately after plasma treatment and after two weeks following the treatment. Superoxide dismutase activity was increased in samples immediately after the plasma treatment. On the other hand, catalase activity was much higher in treated samples when measured two weeks after plasma treatment. These results show that there is a direct proof of the triggering of signal transduction in the cells by two reactive oxygen species H2O2 and O2-, causing enzyme activity and short and long term effects even during the growth of calli, where the information is passed to newborn cells over the period of two weeks.

A novel fuzzy-logic control strategy minimizing N2O emissions.

PubMed

Boiocchi, Riccardo; Gernaey, Krist V; Sin, Gürkan

2017-10-15

A novel control strategy for achieving low N 2 O emissions and low effluent NH 4 + concentration is here proposed. The control strategy uses the measurements of ammonium and nitrate concentrations in inlet and outlet of the aerobic zone of a wastewater treatment plant to calculate a ratio indicating the balance among the microbial groups. More specifically, the ratio will indicate if there is a complete nitrification. In case nitrification is not complete, the controller will adjust the aeration level of the plant in order to inhibit the production of N 2 O from AOB and HB denitrification. The controller was implemented using the fuzzy logic approach. It was comprehensively tested for different model structures and different sets of model parameters with regards to its ability of mitigating N 2 O emissions for future applications in real wastewater treatment plants. It is concluded that the control strategy is useful for those plants having AOB denitrification as the main N 2 O producing process. However, in treatment plants having incomplete NH 2 OH oxidation as the main N 2 O producing pathway, a cascade controller configuration adapting the oxygen supply to respect only the effluent ammonium concentration limits was found to be more effective to ensure low N 2 O emissions. Copyright © 2017 Elsevier Ltd. All rights reserved.

Numerical and experimental study on the dynamics of a μs helium plasma gun with various amounts of O2 admixture

NASA Astrophysics Data System (ADS)

Viegas, Pedro; Damany, Xavier; Iseni, Sylvain; Pouvesle, Jean-Michel; Robert, Eric; Bourdon, Anne

2016-09-01

The use of admixtures (mostly O2 and N2) to a helium buffer has been studied recently to tailor the generation of reactive species in plasma jets for biomedical applications. So far, most experiments have been dedicated to the study of the plasma plume. For endoscopic treatments, it is also important to better understand and optimize the propagation of discharges in long dielectric tubes as catheters. In this work, we present an experimental and numerical study on the dynamics of a μs helium plasma discharge with O2 admixture in a long dielectric tube. In simulations, a 2D fluid model is used. For comparison purposes, the geometries of the set-ups used for simulations and experiments are as close as possible. We compare experiments and simulations for different amounts of O2 admixture added to the buffer gas and present results on the velocity of the discharge front for the various amounts of O2 and different applied voltages. In order to study the influence of different amounts of O2 admixture on the helium discharge dynamics, detailed kinetic schemes have been used. The influence of Penning and charge exchange reactions on the discharge structure and dynamics are studied, as well as the role of negative ions. P.V. is supported by an EDOM fellowship, and X.D. by an INEL/Region Centre-Val de Loire fellowship.

Nanosecond Plasma Enhanced H2/O2/N2 Premixed Flat Flames

DTIC Science & Technology

2014-01-01

Simulations are conducted with a one-dimensional, multi-scale, pulsed -discharge model with detailed plasma-combustion kinetics to develop additional insight... model framework. The reduced electric field, E/N, during each pulse varies inversely with number density. A significant portion of the input energy is...dimensional numerical model [4, 12] capable of resolving electric field transients over nanosecond timescales (during each discharge pulse ) and radical

Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He

NASA Astrophysics Data System (ADS)

Truyen, Nguyen Xuan; Taoka, Noriyuki; Ohta, Akio; Makihara, Katsunori; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Shimizu, Mitsuaki; Miyazaki, Seiichi

2018-06-01

The impacts of noble gas species (Ar and He) on the formation of a SiO2/GaN structure formed by a remote oxygen plasma-enhanced chemical vapor deposition (ROPE-CVD) method were systematically investigated. Atomic force microscopy revealed that ROPE-CVD with He leads to a smooth SiO2 surface compared with the case of Ar. We found that no obvious oxidations of the GaN surfaces after the SiO2 depositions with the both Ar and He cases were observed. The capacitance–voltage (C–V) curves of the GaN MOS capacitors formed by ROPE-CVD with the Ar and He dilutions show good interface properties with no hysteresis and good agreement with the ideal C–V curves even after post deposition annealing at 800 °C. Besides, we found that the current density–oxide electric field characteristics shows a gate leakage current for the Ar case lower than the He case.

Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Yong Seob; Kim, Eungkwon; Hong, Byungyou

2013-12-15

Graphical abstract: The effect of O{sub 2} plasma treatment on the surface and the work function of ITO films. - Highlights: • ITO films were prepared on the glass substrate by RF magnetron sputtering method. • Effects of O{sub 2} plasma treatment on the properties of ITO films were investigated. • The work function of ITO film was changed from 4.67 to 5.66 eV by plasma treatment. - Abstract: The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O{submore » 2} plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.« less

Mechanical Properties of Plasma-Sprayed ZrO2-8 wt% Y2O3 Thermal Barrier Coatings

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Zhu, Dongming; Miller, Robert A.

2004-01-01

Mechanical behavior of free standing, plasma-sprayed ZrO2-8 wt% Y2O3 thermal barrier coatings, including strength, fracture toughness, fatigue, constitutive relation, elastic modulus, and directionality, has been determined under various loading-specimen configurations. This report presents and describes a summary of mechanical properties of the plasma-sprayed coating material to provide them as a design database.

High degree reduction and restoration of graphene oxide on SiO2 at low temperature via remote Cu-assisted plasma treatment.

PubMed

Obata, Seiji; Sato, Minoru; Akada, Keishi; Saiki, Koichiro

2018-06-15

A high throughput synthesis method of graphene has been required for a long time to apply graphene to industrial applications. Of the various synthesis methods, the chemical exfoliation of graphite via graphene oxide (GO) is advantageous as far as productivity is concerned; however, the quality of the graphene produced by this method is far inferior to that synthesized by other methods, such as chemical vapor deposition on metals. Developing an effective reduction and restoration method for GO on dielectric substrates has been therefore a key issue. Here, we present a method for changing GO deposited on a dielectric substrate into high crystallinity graphene at 550 °C; this method uses CH 4 /H 2 plasma and a Cu catalyst. We found that Cu remotely catalyzed the high degree reduction and restoration of GO on SiO 2 and the effect ranged over at least 8 mm. With this method, field-effect transistor devices can be fabricated without any post treatment such as a transfer process. This plasma treatment increased electron and hole mobilities of GO to 480 cm 2 V -1 s -1 and 460 cm 2 V -1 s -1 respectively; these values were more than 50 times greater than that of conventional reduced GO. Furthermore, the on-site conversion ensured that the shape of the GO sheets remained unchanged after the treatment. This plasma treatment realizes the high throughput synthesis of a desired shaped graphene on any substrate without any residue and damage being caused by the transfer process; as such, it expands the potential applicability of graphene.

High degree reduction and restoration of graphene oxide on SiO2 at low temperature via remote Cu-assisted plasma treatment

NASA Astrophysics Data System (ADS)

Obata, Seiji; Sato, Minoru; Akada, Keishi; Saiki, Koichiro

2018-06-01

A high throughput synthesis method of graphene has been required for a long time to apply graphene to industrial applications. Of the various synthesis methods, the chemical exfoliation of graphite via graphene oxide (GO) is advantageous as far as productivity is concerned; however, the quality of the graphene produced by this method is far inferior to that synthesized by other methods, such as chemical vapor deposition on metals. Developing an effective reduction and restoration method for GO on dielectric substrates has been therefore a key issue. Here, we present a method for changing GO deposited on a dielectric substrate into high crystallinity graphene at 550 °C this method uses CH4/H2 plasma and a Cu catalyst. We found that Cu remotely catalyzed the high degree reduction and restoration of GO on SiO2 and the effect ranged over at least 8 mm. With this method, field-effect transistor devices can be fabricated without any post treatment such as a transfer process. This plasma treatment increased electron and hole mobilities of GO to 480 cm2 V‑1 s‑1 and 460 cm2 V‑1 s‑1 respectively; these values were more than 50 times greater than that of conventional reduced GO. Furthermore, the on-site conversion ensured that the shape of the GO sheets remained unchanged after the treatment. This plasma treatment realizes the high throughput synthesis of a desired shaped graphene on any substrate without any residue and damage being caused by the transfer process; as such, it expands the potential applicability of graphene.

Impacts of Nitrogen Removal and Re-Application on N2O fluxes from Narragansett Bay: Contrasting Turfgrasses, Salt Marshes, and Wastewater Treatment Systems

NASA Astrophysics Data System (ADS)

Brannon, E.; Moseman-Valtierra, S.; Quinn, R. K.; Amador, J.; Brown, R.; Lancellotti, B.; Glennon, K.; Celeste, G.; Craver, V.

2016-12-01

Narragansett Bay in Rhode Island is characterized by a substantial, historic bay-wide nitrogen (N) gradient. Centralized wastewater treatment plants (WWTPs) are a major anthropogenic N source. Onsite wastewater treatments systems (OWTS), which serve 1/3 of all households in the state, are another anthropogenic N source. Recent state regulation has prompted upgrades to both WWTPs and OWTS to increase N removal capacities. Although this should lower N loads to Narragansett Bay, it has the potential to increase the flux of nitrous oxide (N2O), a potent greenhouse gas. We measured summer-time (2016) N2O fluxes of a major WWTP (biological N removal system at Field's Point in Providence) and three of the most common advanced OWTS in the Narragansett Bay watershed (Orenco Advantex AX20, BioMicrobics FAST, SeptiTech D Series). We also tested impacts of application of recovered N (biosolids from wastewater sludge) on N2O fluxes from a turfgrass (Schedonerus arundinaceus) and dominant native coastal cordgrass (Spartina alterniflora) in mesocosm experiments. Preliminary results indicate that the largest N2O fluxes (245 ± 72 µmol N2O m-2 h-1) were from the Field's Point WWTP. Significant, but smaller N2O fluxes (6 ± 3 µmol N2O m-2 h-1 were also measured from the OWTS. In contrast, N2O fluxes from the N-enriched native coastal cordgrass and turfgrass mesocosms were often non-detectable. However, fluxes from a few mesocosms (max. of 25 µmol N2O m-2 h-1) were on the same order of magnitude as fluxes from the OWTS. A state-wide budget of N2O emissions from turfgrasses, intertidal marshes, and OWTS will be estimated to determine their significance as sources relative to the Field's Point WWTP. This data will be used to identify areas where N2O fluxes can be minimized in the state of RI.

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

PubMed

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

Rapid destruction of the rhodamine B using TiO2 photocatalyst in the liquid phase plasma

PubMed Central

2013-01-01

Background Rhodamine B (RhB) is widely used as a colorant in textiles and food stuffs, and is also a well-known water tracer fluorescent. It is harmful to human beings and animals, and causes irritation of the skin, eyes and respiratory tract. The carcinogenicity, reproductive and developmental toxicity, neurotoxicity and chronic toxicity toward humans and animals have been experimentally proven. RhB cannot be effectively removed by biological treatment due to the slow kinetics. Therefore, RhB is chosen as a model pollutant for liquid phase plasma (LPP) treatment in the present investigation. Results This paper presents experimental results for the bleaching of RhB from aqueous solutions in the presence of TiO2 photocatalyst with LPP system. Properties of generated plasma were investigated by optical emission spectroscopy methods. The results of electrical-discharge degradation of RhB showed that the decomposition rate increased with the applied voltage, pulse width, and frequency. The oxygen gas addition to reactant solution increases the degradation rate by active oxygen species. The RhB decomposition rate was shown to increase with the TiO2 particle dosage. Conclusion This work presents the conclusions on the photocatalytic oxidation of RhB, as a function of plasma conditions, oxygen gas bubbling as well as TiO2 particle dosage. We knew that using the liquid phase plasma system with TiO2 photocatalyst at high speed we could remove the organic matter in the water. PMID:24041151

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Andersson, Thorvald; Ive, Tommy

2015-04-01

Plasma-assisted molecular beam epitaxy (MBE) was used to grow ZnO (0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 440°C-445°C and an O2 flow rate of 2.0-2.5 sccm, we obtained ZnO layers with smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm shown by AFM. The FWHM for X-ray rocking curves recorded across the ZnO(0002) and ZnO(10bar 15) reflections were 200 and 950 arcsec, respectively. These values showed that the mosaicity (tilt and twist) of the ZnO film was comparable to corresponding values of the underlying GaN buffer. It was found that a substrate temperature > 450°C and a high Zn-flux always resulted in a rough ZnO surface morphology. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82.3% and 73.0%, respectively and the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements showed that the layers were intrinsically n-type with an electron concentration of 1019 cm-3 and a Hall mobility of 50 cm2·V-1·s-1.

An investigation onto the molecular structure of 5-chloro-3-(2-(4-ethylpiperazine-1-il)-2-oxoethyl)benzo[d]thiazole-2(3H)-on drug molecule before and after atmospheric pressure plasma treatment

NASA Astrophysics Data System (ADS)

Tanışlı, Murat; Taşal, Erol; Şahin, Neslihan; Dikmen, Gökhan

2018-05-01

The spectra of molecular structure for the 5-chloro-3-(2-(4-ethylpiperazine-1-il)-2-oxoethyl)benzo[d]thiazole-2(3H)-on drug molecule (abbreviated as 5KEB) before and after the atmospheric pressure plasma treatments (APPTs) of neon (Ne) and argon (Ar) were investigated. The Fourier transform infrared (FT-IR), ultraviolet visible (UV-Vis) spectra and NMR measurements of the 5KEB drug molecule dissolved in toluene and ethanol solvents were recorded and examined for liquid phases. Then FT-IR, UV-Vis spectra and NMR measurements were analysed. It is seen that some bonds of 5KEB molecule were decomposed. There were also unobserved vibrational modes. After the Ne plasma at the atmospheric pressure applied to 5KEB drug molecule dissolved in toluene, the bonds as 9Ssbnd 8C; 9Ssbnd 8C = 10 O, 8Csbnd 7N, 7Nsbnd 8C = 10O were vanished, and then the new bonds of the 7N = 8C, 7N = 8C = 10 O, 9Ssbnd 5Csbnd 4Csbnd 7N = 8C = 10O were observed. New photoproducts may be defined as the stretching peaks, stretching vibrational modes for 5KEB drug molecule in liquid phase prepared with ethanol and toluene solvents after APPT. Also, after Ar plasma at atmospheric pressure applied here, the 9Ssbnd 8C bond of the 5KEB drug molecule dissolved in toluene was broken. The isomerization process in UV-Vis was defined by π-π* and n-π* electronic transitions. According to NMR results, protons of pyridine ring, protons of CH2 group bonded to carbonyl group and protons of CH3 group more affected than other protons from Ar and Ne APPTs and these protons were eliminated by Ar and Ne APPTs.

On the production of N2O from the reaction of O/1D/with N2.

NASA Technical Reports Server (NTRS)

Simonaitis, R.; Lissi, E.; Heicklen, J.

1972-01-01

Ozone was photolyzed at 2537 A and at 25 C in the presence of 42-115 torr of O2 and about 880 torr of N2 to test the relative importance of the two reactions O(1D) + N2 + M leading to N2O + M and O(1D) + N2 leading to O(3P) + N2. In this study N2O was not found as a product. Thus from our detectability limit for N2O an upper limit to the efficiency of the first reaction relative to the second of 2.5 times 10 to the -6 power at 1000-torr total pressure was computed.

Patterned Well-Aligned ZnO Nanorods Assisted with Polystyrene Monolayer by Oxygen Plasma Treatment.

PubMed

Choi, Hyun Ji; Lee, Yong-Min; Yu, Jung-Hoon; Hwang, Ki-Hwan; Boo, Jin-Hyo

2016-08-05

Zinc oxide is known as a promising material for sensing devices due to its piezoelectric properties. In particular, the alignment of ZnO nanostructures into ordered nanoarrays is expected to improve the device sensitivity due to the large surface area which can be utilized to capture significant quantities of gas particles. However, ZnO nanorods are difficult to grow on the quartz substrate with well-ordered shape. So, we investigated nanostructures by adjusting the interval distance of the arranged ZnO nanorods using polystyrene (PS) spheres of various sizes (800 nm, 1300 nm and 1600 nm). In addition, oxygen plasma treatment was used to specify the nucleation site of round, patterned ZnO nanorod growth. Therefore, ZnO nanorods were grown on a quartz substrate with a patterned polystyrene monolayer by the hydrothermal method after oxygen plasma treatment. The obtained ZnO nanostructures were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM).

N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.

PubMed

Fang, Yung-Chin; Chen, Kuen-Yi; Hsieh, Ching-Heng; Su, Chang-Chia; Wu, Yung-Hsien

2015-12-09

Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. The capability of the surface passivation was evidenced by the low interface trap density (D(it)) of 1.62 × 10(11) cm(-2) eV(-1), which is primarily due to the formation of Ge-O and Sn-O bonds at the surface by high density/reactivity oxygen radicals that effectively suppress dangling bonds and decrease gap states. The good D(it) not only makes tiny frequency dispersion in the characterization of GeSn MOS capacitors, but results in GeSn N-MOSFETs with outstanding peak electron mobility as high as 518 cm(2)/(V s) which outperforms other devices reported in the literature due to reduced undesirable carrier scattering. In addition, the GeSn N-MOSFETs also exhibit promising characteristics in terms of acceptable subthreshold swing of 156 mV/dec and relatively large I(ON)/I(OFF) ratio more than 4 orders. Moreover, the robust reliability in terms small V(t) variation against high field stress attests the feasibility of using the O2 plasma-treated passivation to advanced GeSn technology.

On the production of N2O from the reaction of O(1 D) with N2

NASA Technical Reports Server (NTRS)

Simonaitis, R.; Lissi, E.; Heicklen, J.

1972-01-01

Ozone was photolyzed at 2537 A and 25 C in the presence of 42-115 torr of O2 and about 880 torr of N2 to test the relative importance of the two reactions: (1) O(1D) + N2 + M yields N2O + M, and (2) O(1D) + N2 yields O(3P) + N2. N2O was not found as a product. Thus from our detectability limit for N2O (0.3 micron), an upper limit to the efficiency of the first reaction relative to the second of 0.0000025 at 1000 torr total pressure was computed. This corresponds to k1/k2 smaller than 0.8 x 10 to the minus 25 power cu cm/particle.

Partial nitrogen loss in SrTaO2N and LaTiO2N oxynitride perovskites

NASA Astrophysics Data System (ADS)

Chen, Daixi; Habu, Daiki; Masubuchi, Yuji; Torii, Shuki; Kamiyama, Takashi; Kikkawa, Shinichi

2016-04-01

SrTaO2N heated in a helium atmosphere began to release nitrogen of approximately 30 at% at 950 °C while maintaining the perovskite structure and its color changed from orange to dark green. Then it decomposed above 1200 °C to a black mixture of Sr1.4Ta0.6O2.73, Ta2N, and Sr5Ta4O15. The second decomposition was not clearly observed when SrTaO2N was heated in a nitrogen atmosphere below 1550 °C. After heating at 1500 °C for 3 h under a 0.2 MPa nitrogen atmosphere, the perovskite product became dark green and conductive. Structure refinement results suggested that the product was a mixture of tetragonal and cubic perovskites with a decreased ordering of N3-/O2-. The sintered body was changed to an n-type semiconductor after a partial loss of nitrogen to be reduced from the originally insulating SrTaO2N perovskite lattice. LaTiO2N was confirmed to have a similar cis-configuration of the TiO4N2 octahedron as that of TaO4N2 in SrTaO2N. It also released some of its nitrogen at 800 °C changing its color from brown to black and then decomposed to a mixture of LaTiO3, La2O3, and TiN at 1100 °C. These temperatures are lower than those in SrTaO2N.

Surface Functionalization of Polyethylene Granules by Treatment with Low-Pressure Air Plasma.

PubMed

Šourková, Hana; Primc, Gregor; Špatenka, Petr

2018-05-25

Polyethylene granules of diameter 2 mm were treated with a low-pressure weakly ionized air plasma created in a metallic chamber by a pulsed microwave discharge of pulse duration 180 μs and duty cycle 70%. Optical emission spectroscopy showed rich bands of neutral nitrogen molecules and weak O-atom transitions, but the emission from N atoms was below the detection limit. The density of O atoms in the plasma above the samples was measured with a cobalt catalytic probe and exhibited a broad peak at the pressure of 80 Pa, where it was about 2.3 × 10 21 m -3 . The samples were characterized by X-ray photoelectron spectroscopy. Survey spectra showed oxygen on the surface, while the nitrogen concentration remained below the detection limit for all conditions. The high-resolution C1s peaks revealed formation of various functional groups rather independently from treatment parameters. The results were explained by extensive dissociation of oxygen molecules in the gaseous plasma and negligible flux of N atoms on the polymer surface.

Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2 chamber wall coating

NASA Astrophysics Data System (ADS)

Tinck, S.; Boullart, W.; Bogaerts, A.

2011-08-01

In this paper, simulations are performed to gain a better insight into the properties of a Cl2/Ar plasma, with and without O2, during plasma etching of Si. Both plasma and surface properties are calculated in a self-consistent manner. Special attention is paid to the behavior of etch products coming from the wafer or the walls, and how the chamber walls can affect the plasma and the resulting etch process. Two modeling cases are considered. In the first case, the reactor walls are defined as clean (Al2O3), whereas in the second case a SiO2 coating is introduced on the reactor walls before the etching process, so that oxygen will be sputtered from the walls and introduced into the plasma. For this reason, a detailed reaction set is presented for a Cl2/O2/Ar plasma containing etched species, as well as an extensive reaction set for surface processes, including physical and chemical sputtering, chemical etching and deposition processes. Density and flux profiles of various species are presented for a better understanding of the bulk plasma during the etching process. Detailed information is also given on the composition of the surfaces at various locations of the reactor, on the etch products in the plasma and on the surface loss probabilities of the plasma species at the walls, with different compositions. It is found that in the clean chamber, walls are mostly chlorinated (Al2Cl3), with a thin layer of etch products residing on the wall. In the coated chamber, an oxy-chloride layer is grown on the walls for a few nanometers during the etching process. The Cl atom wall loss probability is found to decrease significantly in the coated chamber, hence increasing the etch rate. SiCl2, SiCl4 and SiCl3 are found to be the main etch products in the plasma, with the fraction of SiCl2 being always slightly higher. The simulation results compare well with experimental data available from the literature.

Quenching of I(2P1/2) by NO2, N2O4, and N2O.

PubMed

Kabir, Md Humayun; Azyazov, Valeriy N; Heaven, Michael C

2007-10-11

Quenching of excited iodine atoms (I(5p5, 2P1/2)) by nitrogen oxides are processes of relevance to discharge-driven oxygen iodine lasers. Rate constants at ambient and elevated temperatures (293-380 K) for quenching of I(2P1/2) atoms by NO2, N2O4, and N2O have been measured using time-resolved I(2P1/2) --> I(2P3/2) 1315 nm emission. The excited atoms were generated by pulsed laser photodissociation of CF3I at 248 nm. The rate constants for I(2P1/2) quenching by NO2 and N2O were found to be independent of temperature over the range examined with average values of (2.9 +/- 0.3) x 10(-15) and (1.4 +/- 0.1) x 10(-15) cm3 s(-1), respectively. The rate constant for quenching of I(2P1/2) by N2O4 was found to be (3.5 +/- 0.5) x 10(-13) cm3 s(-1) at ambient temperature.

Conversion of CH4/CO2 to syngas over Ni-Co/Al2O3-ZrO2 nanocatalyst synthesized via plasma assisted co-impregnation method: Surface properties and catalytic performance

NASA Astrophysics Data System (ADS)

Rahemi, Nader; Haghighi, Mohammad; Akbar Babaluo, Ali; Fallah Jafari, Mahdi; Khorram, Sirous

2013-09-01

Ni/Al2O3 catalyst promoted by Co and ZrO2 was prepared by co-impregnation method and treated with glow discharge plasma. The catalytic activity of the synthesized nanocatalysts has been tested toward conversion of CH4/CO2 to syngas. The physicochemical characterizations like XRD, EDX, FESEM, TEM, BET, FTIR, and XPS show that plasma treatment results in smaller particle size, more surface concentration, and uniform morphology. The dispersion of nickel in plasma-treated nanocatalyst was also significantly improved, which was helpful for controlling the ensemble size of active phase atoms on the support surface. Improved physicochemical properties caused 20%-30% enhancement in activity of plasma-treated nanocatalyst that means to achieve the same H2 or CO yield, the plasma-treated nanocatalyst needed about 100 °C lower reaction temperature. The H2/CO ratio got closer to 1 at higher temperatures and finally at 850 °C H2/CO = 1 is attained for plasma-treated nanocatalyst. Plasma-treated nanocatalyst due to smaller Ni particles and strong interaction between active phase and support has lower tendency to keep carbon species on its structure and hence excellent stability can be observed for this catalyst.

Fabrication and Properties of Plasma-Sprayed Al2O3/ZrO2 Composite Coatings

NASA Astrophysics Data System (ADS)

Dejang, N.; Limpichaipanit, A.; Watcharapasorn, A.; Wirojanupatump, S.; Niranatlumpong, P.; Jiansirisomboon, S.

2011-12-01

Al2O3 /xZrO2 (where x = 0, 3, 13, and 20 wt.%) composite coatings were deposited onto mild steel substrates by atmospheric plasma spraying of mixed α-Al2O3 and nano-sized monoclinic-ZrO2 powders. Microstructural investigation showed that the coatings comprised well-separated Al2O3 and ZrO2 lamellae, pores, and partially molten particles. The coating comprised mainly of metastable γ-Al2O3 and tetragonal-ZrO2 with trace of original α-Al2O3 and monoclinic-ZrO2 phases. The effect of ZrO2 addition on the properties of coatings were investigated in terms of microhardness, fracture toughness, and wear behavior. It was found that ZrO2 improved the fracture toughness, reduced friction coefficient, and wear rate of the coatings.

Soil invertebrate fauna affect N2 O emissions from soil.

PubMed

Kuiper, Imke; de Deyn, Gerlinde B; Thakur, Madhav P; van Groenigen, Jan Willem

2013-09-01

Nitrous oxide (N2 O) emissions from soils contribute significantly to global warming. Mitigation of N2 O emissions is severely hampered by a lack of understanding of its main controls. Fluxes can only partly be predicted from soil abiotic factors and microbial analyses - a possible role for soil fauna has until now largely been overlooked. We studied the effect of six groups of soil invertebrate fauna and tested the hypothesis that all of them increase N2 O emissions, although to different extents. We conducted three microcosm experiments with sandy soil and hay residue. Faunal groups included in our experiments were as follows: fungal-feeding nematodes, mites, springtails, potworms, earthworms and isopods. In experiment I, involving all six faunal groups, N2 O emissions declined with earthworms and potworms from 78.4 (control) to 37.0 (earthworms) or 53.5 (potworms) mg N2 O-N m(-2) . In experiment II, with a higher soil-to-hay ratio and mites, springtails and potworms as faunal treatments, N2 O emissions increased with potworms from 51.9 (control) to 123.5 mg N2 O-N m(-2) . Experiment III studied the effect of potworm density; we found that higher densities of potworms accelerated the peak of the N2 O emissions by 5 days (P < 0.001), but the cumulative N2 O emissions remained unaffected. We propose that increased soil aeration by the soil fauna reduced N2 O emissions in experiment I, whereas in experiment II N2 O emissions were driven by increased nitrogen and carbon availability. In experiment III, higher densities of potworms accelerated nitrogen and carbon availability and N2 O emissions, but did not increase them. Overall, our data show that soil fauna can suppress, increase, delay or accelerate N2 O emissions from soil and should therefore be an integral part of future N2 O studies. © 2013 John Wiley & Sons Ltd.

Surface tailoring of newly developed amorphous Znsbnd Sisbnd O thin films as electron injection/transport layer by plasma treatment: Application to inverted OLEDs and hybrid solar cells

NASA Astrophysics Data System (ADS)

Yang, Hongsheng; Kim, Junghwan; Yamamoto, Koji; Xing, Xing; Hosono, Hideo

2018-03-01

We report a unique amorphous oxide semiconductor Znsbnd Sisbnd O (a-ZSO) which has a small work function of 3.4 eV for as-deposited films. The surface modification of a-ZSO thin films by plasma treatments is examined to apply it to the electron injection/transport layer of organic devices. It turns out that the energy alignment and exciton dissociation efficiency at a-ZSO/organic semiconductor interface significantly changes by choosing different gas (oxygen or argon) for plasma treatments (after a-ZSO was exposed to atmospheric environment for 5 days). In situ ultraviolet photoelectron spectroscopy (UPS) measurement reveals that the work function of a-ZSO is increased to 4.0 eV after an O2-plasma treatment, while the work function of 3.5 eV is recovered after an Ar-plasma treatment which indicates this treatment is effective for surface cleaning. To study the effects of surface treatments to device performance, OLEDs and hybrid polymer solar cells with O2-plasma or Ar-plasma treated a-ZSO are compared. Effects of these surface treatments on performance of inverted OLEDs and hybrid polymer solar cells are examined. Ar-plasma treated a-ZSO works well as the electron injection layer in inverted OLEDs (Alq3/a-ZSO) because the injection barrier is small (∼ 0.1 eV). On the other hands, O2-plasma treated a-ZSO is more suitable for application to hybrid solar cells which is benefiting from higher exciton dissociation efficiency at polymer (P3HT)/ZSO interface.

Bacteria Adherence Properties of Nitrogen-Doped TiO2 Coatings by Plasma Surface Alloying Technique

NASA Astrophysics Data System (ADS)

Wang, Hefeng; Tang, Bin; Li, Xiuyan; Fan, Ailan

Titanium nitride coatings on 316L stainless steel (S. S) were obtained by plasma surface alloying technique. Nitrogen-doped titanium dioxide (TiO2-xNx) was synthesized by oxidative annealing the resulted TiNx coatings in air. The reference TiO2 samples were also prepared by oxidation of sputtered Ti coatings. The as-prepared coatings were characterized by X-ray diffraction, glow discharge optical emission spectrometer (GDOES), scanning electron microscopy, X-ray hotoelectron spectroscopy and UV-Vis spectrophotometry, respectively. The bacteria adherence property of the TiO2-xNx coatings on stainless steel on the oral bacteria Streptococcus Mutans was investigated and compared with that of stainless steel by fluorescence microscopy. The mechanism of the bacteria adherence was discussed. The results show that the TiO2-xNx coatings are composed of anatase crystalline structure. SEM measurement indicates a rough surface morphology with three-dimensional homogenous protuberances after annealing treatment. Optical properties reveal an extended tailing of the absorption edge toward the visible region due to nitrogen presence. The band gap of the N-doped sample is reduced from 2.29 eV to 1.90 eV compared with the pure TiO2 one. Because of the different roughness and microstructure, the TiO2-xNx coatings inhibit the bacteria adherence.

Influence of Feedstock Powder Modification by Heat Treatments on the Properties of APS-Sprayed Al2O3-40% TiO2 Coatings

NASA Astrophysics Data System (ADS)

Berger, Lutz-Michael; Sempf, Kerstin; Sohn, Yoo Jung; Vaßen, Robert

2018-04-01

The formation and decomposition of aluminum titanate (Al2TiO5, tialite) in feedstock powders and coatings of the binary Al2O3-TiO2 system are so far poorly understood. A commercial fused and crushed Al2O3-40%TiO2 powder was selected as the feedstock for the experimental series presented in this paper, as the composition is close to that of Al2TiO5. Part of that powder was heat-treated in air at 1150 and 1500 °C in order to modify the phase composition, while not influencing the particle size distribution and processability. The powders were analyzed by thermal analysis, XRD and FESEM including EDS of metallographically prepared cross sections. Only a maximum content of about 45 wt.% Al2TiO5 was possible to obtain with the heat treatment at 1500 °C due to inhomogeneous distribution of Al and Ti in the original powder. Coatings were prepared by plasma spraying using a TriplexPro-210 (Oerlikon Metco) with Ar-H2 and Ar-He plasma gas mixtures at plasma power levels of 41 and 48 kW. Coatings were studied by XRD, SEM including EDS linescans of metallographically prepared cross sections, and microhardness HV1. With the exception of the powder heat-treated at 1500 °C an Al2TiO5-Ti3O5 (tialite-anosovite) solid solution Al2- x Ti1+ x O5 instead of Al2TiO5 existed in the initial powder and the coatings.

Charge separation and transport of the n=2 instability in C-2 FRC plasmas

NASA Astrophysics Data System (ADS)

Deng, Bihe; Sun, Xuan; Tuszewski, Michel

2012-10-01

Charge separation is critical in the positive feedback loop for gravitational type instabilities to grow [1], such as in the case of the n=2 mode in the C-2 field reversed configuration (FRC) experiment [2]. A fast time response Langmuir probe with minimum perturbation to the plasma is inserted into the edge of the C-2 plasma to measure the plasma floating potential. With the combined plasma wobble motion and spin motion, 2-D scans of the plasma floating potential are obtained, and evidence of charge separation associated with the n=2 instability is observed. The transport due to charge separation is estimated. Charge neutralization can provide an alternative method to stabilize the n=2 mode. An experiment is proposed to test this method with two probes inserted into the plasma from two azimuthally separated ports and an external shorting circuit, to constantly neutralize the charge separation, thus suppress the growth of the n=2 mode. [4pt] [1] R.J. Goldston and P.H. Rutherford, Introduction to Plasma Physics (Institute of Physics Publishing, Bristol, 2000).[0pt] [2]. M.W. Binderbauer et al, Phys. Rev. Lett. 105, 045003 (2010).

Effects of RF plasma treatment on spray-pyrolyzed copper oxide films on silicon substrates

NASA Astrophysics Data System (ADS)

Madera, Rozen Grace B.; Martinez, Melanie M.; Vasquez, Magdaleno R., Jr.

2018-01-01

The effects of radio-frequency (RF) argon (Ar) plasma treatment on the structural, morphological, electrical and compositional properties of the spray-pyrolyzed p-type copper oxide films on n-type (100) silicon (Si) substrates were investigated. The films were successfully synthesized using 0.3 M copper acetate monohydrate sprayed on precut Si substrates maintained at 350 °C. X-ray diffraction revealed cupric oxide (CuO) with a monoclinic structure. An apparent improvement in crystallinity was realized after Ar plasma treatment, attributed to the removal of residues contaminating the surface. Scanning electron microscope images showed agglomerated monoclinic grains and revealed a reduction in size upon plasma exposure induced by the sputtering effect. The current-voltage characteristics of CuO/Si showed a rectifying behavior after Ar plasma exposure with an increase in turn-on voltage. Four-point probe measurements revealed a decrease in sheet resistance after plasma irradiation. Fourier transform infrared spectral analyses also showed O-H and C-O bands on the films. This work was able to produce CuO thin films via spray pyrolysis on Si substrates and enhancement in their properties by applying postdeposition Ar plasma treatment.

Quantification of nitrous oxide (N2O) emissions and soluble microbial product (SMP) production by a modified AOB-NOB-N2O-SMP model.

PubMed

Kim, MinJeong; Wu, Guangxue; Yoo, ChangKyoo

2017-03-01

A modified AOB-NOB-N 2 O-SMP model able to quantify nitrous oxide (N 2 O) emissions and soluble microbial product (SMP) production during wastewater treatment is proposed. The modified AOB-NOB-N 2 O-SMP model takes into account: (1) two-step nitrification by ammonia-oxidizing bacteria (AOB) and nitrite-oxidizing bacteria (NOB), (2) N 2 O production by AOB denitrification under oxygen-limited conditions and (3) SMP production by microbial growth and endogenous respiration. Validity of the modified model is demonstrated by comparing the simulation results with experimental data from lab-scale sequencing batch reactors (SBRs). To reliably implement the modified model, a model calibration that adjusts model parameters to fit the model outputs to the experimental data is conducted. The results of this study showed that the modeling accuracy of the modified AOB-NOB-N 2 O-SMP model increases by 19.7% (NH 4 ), 51.0% (NO 2 ), 57.8% (N 2 O) and 16.7% (SMP) compared to the conventional model which does not consider the two-step nitrification and SMP production by microbial endogenous respiration. Copyright © 2016 Elsevier Ltd. All rights reserved.

Crystal structure of aqua-1κO-{μ-2-[(2-hydroxy-ethyl)methylamino]ethanolato-2:1κ(4) O (1),N,O (2):O (1)}[μ-2,2'-(methylimino)diethanolato-1:2κ(4) O,N,O':O]dithiocyanato-1κN,2κN-chromium(III)copper(II).

PubMed

Rusanova, Julia A; Semenaka, Valentina V; Dyakonenko, Viktoriya V; Shishkin, Oleg V

2015-09-01

The title compound, [CrCu(C5H11NO2)(C5H12NO2)(NCS)2(H2O)] or [Cr(μ-mdea)Cu(μ-Hmdea)(NCS)2H2O], (where mdeaH2 is N-methylethanolamine, C5H13NO2) is formed as a neutral heterometal Cu(II)/Cr(III) complex. The mol-ecular structure of the complex is based on a binuclear {CuCr(μ-O)2} core. The coordination environment of each metal atom involves the N,O,O atoms of the tridentate ligand, one bridging O atom of the ligand and the N atom of the thio-cyanato ligands. The Cu(II) ion adopts a distorted square-pyramidal coordination while the Cr(III) ion has a distorted octa-hedral coordination geometry completed by the aqua ligand. In the crystal, the binuclear complexes are linked via two pairs of O-H⋯O hydrogen bonds to form inversion dimers, which are arranged in columns parallel to the a axis. In the μ-mdea ligand two -CH2 groups and the methyl group were refined as disordered over two sets of sites with equal occupancies. The structure was refined as a two-component twin with a twin scale factor of 0.242 (1).

{μ-2-[(3-Amino-2,2-dimethyl-prop-yl)imino-meth-yl]-6-meth-oxy-phenolato-1:2κ(5)O(1),O(6):N,N',O(1)}{2-[(3-amino-2,2-dimethyl-prop-yl)imino-meth-yl]-6-meth-oxy-phenolato-1κ(3)N,N',O(1)}-μ-azido-1:2κ(2)N:N-azido-2κN-methanol-2κO-dinickel(II).

PubMed

Ghaemi, Akbar; Rayati, Saeed; Fayyazi, Kazem; Ng, Seik Weng; Tiekink, Edward R T

2012-08-01

Two distinct coordination geometries are found in the binuclear title complex, [Ni(2)(C(13)H(19)N(2)O(2))(2)(N(3))(2)(CH(3)OH)], as one Schiff base ligand is penta-dentate, coordinating via the anti-cipated oxide O, imine N and amine N atoms (as for the second, tridentate, ligand) but the oxide O is bridging and coordination also occurs through the meth-oxy O atom. The Ni(II) atoms are linked by a μ(2)-oxide atom and one end of a μ(2)-azide ligand, forming an Ni(2)ON core. The coordination geometry for the Ni(II) atom coordinated by the tridentate ligand is completed by the meth-oxy O atom derived from the penta-dentate ligand, with the resulting N(3)O(3) donor set defining a fac octa-hedron. The second Ni(II) atom has its cis-octa-hedral N(4)O(2) coordination geometry completed by the imine N and amine N atoms of the penta-dentate Schiff base ligand, a terminally coordinated azide N and a methanol O atom. The arrangement is stabilized by an intra-molecular hydrogen bond between the methanol H and the oxide O atom. Linear supra-molecular chains along the a axis are formed in the crystal packing whereby two amine H atoms from different amine atoms hydrogen bond to the terminal N atom of the monodentate azide ligand.

A pulsed plasma jet with the various Ar/N2 mixtures

NASA Astrophysics Data System (ADS)

Barkhordari, A.; Ganjovi, A.; Mirzaei, I.; Falahat, A.; Rostami Ravari, M. N.

2017-12-01

In this paper, using the Optical Emission Spectroscopy technique, the physical properties of a fabricated pulsed DBD plasma jet are studied. Ar/N2 gaseous mixture is taken as operational gas, and Ar contribution in Ar/N2 mixture is varied from 75 to 95%. Through the optical emission spectra analysis of the pulsed DBD plasma jet, the rotational, vibrational and excitation temperatures and density of electrons in plasma medium of the pulsed plasma jet are obtained. It is seen that, at the wavelength of 750.38 nm, the radiation intensity from the Ar 4p → 4 s transition increases at the higher Ar contributions in Ar/N2 mixture. It is found that, for 95% of Ar presence in the mixture, the emission intensities from argon and molecular nitrogen are higher, and the emission line intensities will increase nonlinearly. In addition, it is observed that the quenching of Ar* by N2 results in the higher intensities of N2 excited molecules. Moreover, at the higher percentages of Ar in Ar/N2 mixture, while all the plasma temperatures are increased, the plasma electron density is reduced.

Measurement of OH, NO, O and N atoms in helium plasma jet for ROS/RNS controlled biomedical processes

NASA Astrophysics Data System (ADS)

Yonemori, Seiya; Kamakura, Taku; Ono, Ryo

2014-10-01

Atmospheric-pressure plasmas are of emerging interest for new plasma applications such as cancer treatment, cell activation and sterilization. In those biomedical processes, reactive oxygen/nitrogen species (ROS/RNS) are said that they play significant role. It is though that active species give oxidative stress and induce biomedical reactions. In this study, we measured OH, NO, O and N atoms using laser induced fluorescence (LIF) measurement and found that voltage polarity affect particular ROS. When negative high voltage was applied to the plasma jet, O atom density was tripled compared to the case of positive applied voltage. In that case, O atom density was around 3 × 1015 [cm-3] at maximum. In contrast, OH and NO density did not change their density depending on the polarity of applied voltage, measured as in order of 1013 and 1014 [cm-3] at maximum, respectively. From ICCD imaging measurement, it could be seen that negative high voltage enhanced secondary emission in plasma bullet propagation and it can affect the effective production of particular ROS. Since ROS/RNS dose can be a quantitative criterion to control plasma biomedical application, those measurement results is able to be applied for in vivo and in vitro plasma biomedical experiments. This study is supported by the Grant-in-Aid for Science Research by the Ministry of Education, Culture, Sport, Science and Technology.

[Effects of organic and inorganic fertilizers on emission and sources of N2O in vegetable soils.

PubMed

Lin, Wei; Ding, Jun Jun; Li, Yu Zhong; Xu, Chun Ying; Li, Qiao Zhen; Zheng, Qian; Zhuang, Shan

2018-05-01

To clarify the microbial pathway of the N 2 O production and consumption under different fertilizers and provide theoretical basis for the reduction of N 2 O emission and rational management of fertilization in vegetable soils, we examined dynamics of N 2 O flux and isotope signatures under different fertilizer treatments in the vegetable soils of Beijing, by setting up four treatments (organic-acetylene, organic-nonacetylene, inorganic-acetylene, inorganic-nonacetylene) and using the stable isotope technique of natural N 2 O abundance. The results showed that the cumulative N 2 O emission from organic-acetylene group, organic-nonacetylene group, inorganic-acetylene group and inorganic-nonacetylene group was (374±37), (283±34), (458±36), (355±41) g·m -2 in cabbage growing season, respectively. N 2 O fluxes were significantly lower in treatments with organic fertilizer than those with inorganic fertilizer and significantly higher in acetylene group than nonacetylene group. The degree of N 2 O reduction were similar in both fertilizer treatments, and higher nitrification was found in inorganic fertilizer than organic fertilizer treatments. Acetylene only inhibited partial nitrification and partial N 2 O reduction at the peak of N 2 O emission. When the emission was reduced, N 2 O reduction could be completely suppressed. Therefore, the inorganic fertilizer might trigger nitrification and promote higher N 2 O emission. The high concentration of N 2 O could withstand that acetylene to inhibite N 2 O reduction. Hence, using organic fertilizers instead of some inorganic ones could effectively reduce N 2 O emission in vegetable soils of Beijing. The N 2 O concentration threshold should be considered when we identify N 2 O source by acetylene inhibition method.

Decomposition of 2-((2-methoxyphenyl)diazenyl)benzene-1,3,5-triol molecule by an argon plasma jet

NASA Astrophysics Data System (ADS)

Tanışlı, Murat; Taşal, Erol

2018-05-01

In this study, we have presented the effects of the argon plasma on a 2-((2-methoxyphenyl)diazenyl)benzene-1,3,5-triol molecule—AZO compound (abbreviated as 2MDB)—under atmospheric pressure. In order to do this, the validated molecule has been considered and plasma has been used to modify it. The atmospheric pressure plasma jet system was specially designed for performing decomposing processes of the 2MDB molecule. The characterizations before and after the application of plasma—which takes only 3 minutes under atmospheric pressure conditions, to dissolve the 2MDB molecule in ethanol and methanol solutions—were examined using the Fourier transform infrared and Ultraviolet-Visible (UV-Vis) spectroscopies. After the plasma treatment, the molecule was broken at -C-N=N-C-C bond. Accurate and important changes are seen clearly from the results. In addition, according to UV-Vis spectra, π-π* electronic transitions related to -N=N- AZO bridge for the 2MDB molecule in polar-aprotic solvents such as ethanol and methanol were recorded as strong transitions. The new photoproducts such as -C-N-N=C and C=O were obtained from the 2MDB molecule.

Atomic scale simulation of H2O2 permeation through aquaporin: toward the understanding of plasma cancer treatment

NASA Astrophysics Data System (ADS)

Yusupov, Maksudbek; Yan, Dayun; Cordeiro, Rodrigo M.; Bogaerts, Annemie

2018-03-01

Experiments have demonstrated the potential selective anticancer capacity of cold atmospheric plasmas (CAPs), but the underlying mechanisms remain unclear. Using computer simulations, we try to shed light on the mechanism of selectivity, based on aquaporins (AQPs), i.e. transmembrane protein channels transferring external H2O2 and other reactive oxygen species, created e.g. by CAPs, to the cell interior. Specifically, we perform molecular dynamics simulations for the permeation of H2O2 through AQP1 (one of the members of the AQP family) and the palmitoyl-oleoyl-phosphatidylcholine (POPC) phospholipid bilayer (PLB). The free energy barrier of H2O2 across AQP1 is lower than for the POPC PLB, while the permeability coefficient, calculated using the free energy and diffusion rate profiles, is two orders of magnitude higher. This indicates that the delivery of H2O2 into the cell interior should be through AQP. Our study gives a better insight into the role of AQPs in the selectivity of CAPs for treating cancer cells.

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

NASA Astrophysics Data System (ADS)

Fujishima, Tatsuya; Joglekar, Sameer; Piedra, Daniel; Lee, Hyung-Seok; Zhang, Yuhao; Uedono, Akira; Palacios, Tomás

2013-08-01

A BCl3 surface plasma treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors with a GaN cap layer has been established. This BCl3 plasma treatment was performed by an inductively coupled plasma reactive ion etching system under conditions that prevented any recess etching. The average contact resistances without plasma treatment, with SiCl4, and with BCl3 plasma treatment were 0.34, 0.41, and 0.17 Ω mm, respectively. Also, the standard deviation of the ohmic contact resistance with BCl3 plasma treatment was decreased. This decrease in the standard deviation of contact resistance can be explained by analyzing the surface condition of GaN with x-ray photoelectron spectroscopy and positron annihilation spectroscopy. We found that the proposed BCl3 plasma treatment technique can not only remove surface oxide but also introduce surface donor states that contribute to lower the ohmic contact resistance.

The synergistic effect of TiO2 nanoporous modification and platelet-rich plasma treatment on titanium-implant stability in ovariectomized rats.

PubMed

Jiang, Nan; Du, Pinggong; Qu, Weidong; Li, Lin; Liu, Zhonghao; Zhu, Songsong

For several decades, titanium and its alloys have been commonly utilized for endosseous implantable materials, because of their good mechanical properties, chemical resistance, and biocompatibility. But associated low bone mass, wear and loss characteristics, and high coefficients of friction have limited their long-term stable performance, especially in certain abnormal bone-metabolism conditions, such as postmenopausal osteoporosis. In this study, we investigated the effects of platelet-rich plasma (PRP) treatment and TiO 2 nanoporous modification on the stability of titanium implants in osteoporotic bone. After surface morphology, topographical structure, and chemical changes of implant surface had been detected by scanning electron microscopy (SEM), atomic force microscopy, contact-angle measurement, and X-ray diffraction, we firstly assessed in vivo the effect of PRP treatment on osseointegration of TiO 2 -modified implants in ovariectomized rats by microcomputed tomography examinations, histology, biomechanical testing, and SEM observation. Meanwhile, the potential molecular mechanism involved in peri-implant osseous enhancement was also determined by quantitative real-time polymerase chain reaction. The results showed that this TiO 2 -modified surface was able to lead to improve bone implant contact, while PRP treatment was able to increase the implant surrounding bone mass. The synergistic effect of both was able to enhance the terminal force of implants drastically in biomechanical testing. Compared with surface modification, PRP treatment promoted earlier osteogenesis with increased expression of the RUNX2 and COL1 genes and suppressed osteoclastogenesis with increased expression of OPG and decreased levels of RANKL. These promising results show that PRP treatment combined with a TiO 2 -nanomodified surface can improve titanium-implant biomechanical stability in ovariectomized rats, suggesting a beneficial effect to support the success of implants in

The synergistic effect of TiO2 nanoporous modification and platelet-rich plasma treatment on titanium-implant stability in ovariectomized rats

PubMed Central

Jiang, Nan; Du, Pinggong; Qu, Weidong; Li, Lin; Liu, Zhonghao; Zhu, Songsong

2016-01-01

For several decades, titanium and its alloys have been commonly utilized for endosseous implantable materials, because of their good mechanical properties, chemical resistance, and biocompatibility. But associated low bone mass, wear and loss characteristics, and high coefficients of friction have limited their long-term stable performance, especially in certain abnormal bone-metabolism conditions, such as postmenopausal osteoporosis. In this study, we investigated the effects of platelet-rich plasma (PRP) treatment and TiO2 nanoporous modification on the stability of titanium implants in osteoporotic bone. After surface morphology, topographical structure, and chemical changes of implant surface had been detected by scanning electron microscopy (SEM), atomic force microscopy, contact-angle measurement, and X-ray diffraction, we firstly assessed in vivo the effect of PRP treatment on osseointegration of TiO2-modified implants in ovariectomized rats by microcomputed tomography examinations, histology, biomechanical testing, and SEM observation. Meanwhile, the potential molecular mechanism involved in peri-implant osseous enhancement was also determined by quantitative real-time polymerase chain reaction. The results showed that this TiO2-modified surface was able to lead to improve bone implant contact, while PRP treatment was able to increase the implant surrounding bone mass. The synergistic effect of both was able to enhance the terminal force of implants drastically in biomechanical testing. Compared with surface modification, PRP treatment promoted earlier osteogenesis with increased expression of the RUNX2 and COL1 genes and suppressed osteoclastogenesis with increased expression of OPG and decreased levels of RANKL. These promising results show that PRP treatment combined with a TiO2-nanomodified surface can improve titanium-implant biomechanical stability in ovariectomized rats, suggesting a beneficial effect to support the success of implants in

Soil Nitrification and N2O Production: the connection with N concentration and Soil Water Content

NASA Astrophysics Data System (ADS)

Zhu-Barker, X.; Horwath, W. R.

2016-12-01

The development of mitigation strategies to reduce nitrous oxide (N2O) emission from soils is dependent on explicating the biophysical factors affecting different N2O production pathways. Ammonia oxidation and heterotrophic denitrification are the main pathways of N2O production, depending on soil conditions such as soil moisture content, oxygen (O2) content and N substrate. Many researchers have reported that N2O production increased as substrate concentration and soil moisture content increased. However, less understood is how N fertilizer concentration and moisture content interact to affect N2O production pathways. To investigate interaction and its effect on O2 consumption, we incubated three agricultural soils (clay, sandy loam, and peat) with different concentrations of (NH4)2SO4 (0-1000 µg N g-1) under 50 %, 75%, and 100% of water holding capacity. All treatments received 15N -KNO3 to bring the concentrations of NO3-_N in soils to 50 mg kg-1 soil and the NO3- pool to an enrichment of 10 atom% 15N. In all soils, the total amount of O2 consumption and N2O production increased as soil ammonical N concentration increased. The increased soil moisture significantly promoted N2O production in sandy loam and clay loam soils, compared to the peat soil. These results indicate that N2O production increased as substrate concentration increased likely due to the onset of O2 limitation caused by ammonia oxidation.

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Ive, Tommy

2015-09-01

Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

O2-O2 and O2-N2 collision-induced absorption mechanisms unravelled

NASA Astrophysics Data System (ADS)

Karman, Tijs; Koenis, Mark A. J.; Banerjee, Agniva; Parker, David H.; Gordon, Iouli E.; van der Avoird, Ad; van der Zande, Wim J.; Groenenboom, Gerrit C.

2018-05-01

Collision-induced absorption is the phenomenon in which interactions between colliding molecules lead to absorption of light, even for transitions that are forbidden for the isolated molecules. Collision-induced absorption contributes to the atmospheric heat balance and is important for the electronic excitations of O2 that are used for remote sensing. Here, we present a theoretical study of five vibronic transitions in O2-O2 and O2-N2, using analytical models and numerical quantum scattering calculations. We unambiguously identify the underlying absorption mechanism, which is shown to depend explicitly on the collision partner—contrary to textbook knowledge. This explains experimentally observed qualitative differences between O2-O2 and O2-N2 collisions in the overall intensity, line shape and vibrational dependence of the absorption spectrum. It is shown that these results can be used to discriminate between conflicting experimental data and even to identify unphysical results, thus impacting future experimental studies and atmospheric applications.

The denitrification paradox: The role of O2 in sediment N2O production

NASA Astrophysics Data System (ADS)

Barnes, Jonathan; Upstill-Goddard, Robert C.

2018-01-01

We designed a novel laboratory sediment flux chamber in which we maintained the headspace O2 partial pressure at preselected values, allowing us to experimentally regulate "in-situ" O2 to evaluate its role in net N2O production by an intertidal estuarine sediment (Tyne, UK). In short-term (30 h) incubations with 10 L of overlying estuarine water (∼3 cm depth) and headspace O2 regulation (headspace: sediment/water ratio ∼9:1), net N2O production was highest at 1.2% O2 (sub-oxic; 32.3 nmol N2O m-2 d-1), an order of magnitude higher than at either 0.0% (anoxic; 2.5 N2O nmol m-2 d-1) or 20.85% (ambient; 2.3 nmol N2O m-2 d-1) O2. In a longer-term sealed incubation (∼490 h) without O2 control, time-dependent behaviour of N2O in the tank headspace was highly non-linear with time, showing distinct phases: (i) an initial period of no or little change in O2 or N2O up to ∼ 100 h; (ii) a quasi-linear, inverse correlation between O2 and N2O to ∼360 h, in which O2 declined to ∼2.1% and N2O rose to ∼7800 natm; (iii) over the following 50 h a slower O2 decline, to ∼1.1%, and a more rapid N2O increase, to ∼12000 natm; (iv) over the next 24 h a slowed O2 decline towards undetectable levels and a sharp fall in N2O to ∼4600 natm; (iv) a continued N2O decrease at zero O2, to ∼3000 natm by ∼ 490 h. These results show clearly that rapid N2O consumption (∼115 nmol m-2 d-1), presumably via heterotrophic denitrification (HD), occurs under fully anoxic conditions and therefore that N2O production, which was optimal for sub-oxic O2, results from other nitrogen transformation processes. In experiments in which we amended sediment overlying water to either 1 mM NH4+ or 1 mM NO3-, N2O production rates were 2-134 nmol N2O m-2 d-1 (NH4+ addition) and 0.4-2.2 nmol N2O m-2 d-1 (NO3- addition). We conclude that processes involving NH4+ oxidation (nitrifier nitrification; nitrifier denitrification; nitrification-coupled denitrification) are principally responsible for N2O

Kinetics of nitrous oxide (N2O) formation and reduction by Paracoccus pantotrophus.

PubMed

Read-Daily, B L; Sabba, F; Pavissich, J P; Nerenberg, R

2016-12-01

Nitrous oxide (N 2 O) is a powerful greenhouse gas emitted from wastewater treatment, as well as natural systems, as a result of biological nitrification and denitrification. While denitrifying bacteria can be a significant source of N 2 O, they can also reduce N 2 O to N 2 . More information on the kinetics of N 2 O formation and reduction by denitrifying bacteria is needed to predict and quantify their impact on N 2 O emissions. In this study, kinetic parameters were determined for Paracoccus pantotrophus, a common denitrifying bacterium. Parameters included the maximum specific reduction rates, [Formula: see text], growth rates, [Formula: see text], and yields, Y, for reduction of NO 3 - (nitrate) to nitrite (NO 2 - ), NO 2 - to N 2 O, and N 2 O to N 2 , with acetate as the electron donor. The [Formula: see text] values were 2.9 gN gCOD -1 d -1 for NO 3 - to NO 2 - , 1.4 gN gCOD -1  d -1 for NO 2 - to N 2 O, and 5.3 gN gCOD -1  d -1 for N 2 O to N 2 . The [Formula: see text] values were 2.7, 0.93, and 1.5 d -1 , respectively. When N 2 O and NO 3 - were added concurrently, the apparent (extant) kinetics, [Formula: see text], assuming reduction to N 2 , were 6.3 gCOD gCOD -1  d -1 , compared to 5.4 gCOD gCOD -1  d -1 for NO 3 - as the sole added acceptor. The [Formula: see text] was 1.6 d -1 , compared to 2.5 d -1 for NO 3 - alone. These results suggest that NO 3 - and N 2 O were reduced concurrently. Based on this research, denitrifying bacteria like P. pantotrophus may serve as a significant sink for N 2 O. With careful design and operation, treatment plants can use denitrifying bacteria to minimize N 2 O emissions.

A Three-Step Atomic Layer Deposition Process for SiN x Using Si2Cl6, CH3NH2, and N2 Plasma.

PubMed

Ovanesyan, Rafaiel A; Hausmann, Dennis M; Agarwal, Sumit

2018-06-06

We report a novel three-step SiN x atomic layer deposition (ALD) process using Si 2 Cl 6 , CH 3 NH 2 , and N 2 plasma. In a two-step process, nonhydrogenated chlorosilanes such as Si 2 Cl 6 with N 2 plasmas lead to poor-quality SiN x films that oxidize rapidly. The intermediate CH 3 NH 2 step was therefore introduced in the ALD cycle to replace the NH 3 plasma step with a N 2 plasma, while using Si 2 Cl 6 as the Si precursor. This three-step process lowers the atomic H content and improves the film conformality on high-aspect-ratio nanostructures as Si-N-Si bonds are formed during a thermal CH 3 NH 2 step in addition to the N 2 plasma step. During ALD, the reactive surface sites were monitored using in situ surface infrared spectroscopy. Our infrared spectra show that, on the post-N 2 plasma-treated SiN x surface, Si 2 Cl 6 reacts primarily with the surface -NH 2 species to form surface -SiCl x ( x = 1, 2, or 3) bonds, which are the reactive sites during the CH 3 NH 2 cycle. In the N 2 plasma step, reactive -NH 2 surface species are created because of the surface H available from the -CH 3 groups. At 400 °C, the SiN x films have a growth per cycle of ∼0.9 Å with ∼12 atomic percent H. The films grown on high-aspect-ratio nanostructures have a conformality of ∼90%.

N2O and CO2 emissions following repeated application of organic and mineral N fertiliser from a vegetable crop rotation.

PubMed

De Rosa, Daniele; Rowlings, David W; Biala, Johannes; Scheer, Clemens; Basso, Bruno; Grace, Peter R

2018-05-11

Accounting for nitrogen (N) release from organic amendments (OA) can reduce the use of synthetic N-fertiliser, sustain crop production, and potentially reduce soil borne greenhouse gases (GHG) emissions. However, it is difficult to assess the GHG mitigation potential for OA as a substitute of N-fertiliser over the long term due to only part of the organic N added to soil is being released in the first year after application. High-resolution nitrous oxide (N 2 O) and carbon dioxide (CO 2 ) emissions monitored from a horticultural crop rotation over 2.5 years from conventional urea application rates were compared to treatments receiving an annual application of raw and composted chicken manure combined with conventional and reduced N-fertiliser rates. The repeated application of composted manure did not increase annual N 2 O emissions while the application of raw manure resulted in N 2 O emissions up to 35.2 times higher than the zero N fertiliser treatment and up to 4.7 times higher than conventional N-fertiliser rate due to an increase in C and N availability following the repeated application of raw OA. The main factor driving N 2 O emissions was the incorporation of organic material accompanied by high soil moisture while the application of synthetic N-fertiliser induced only short-term N 2 O emission pulse. The average annual N 2 O emission factor calculated accounting for the total N applied including OA was equal to 0.27 ± 0.17%, 3.7 times lower than the IPCC default value. Accounting for the estimated N release from OA only enabled a more realistic N 2 O emission factor to be defined for organically amended field that was equal to 0.48 ± 0.3%. This study demonstrated that accounting for the N released from repeated application of composted rather than raw manure can be a viable pathway to reduce N 2 O emissions and maintain soil fertility. Copyright © 2017. Published by Elsevier B.V.

Characterization of the N2O isotopic composition (15N, 18O and N2O isotopomers) emitted from incubated Amazon forest soils. Implications for the global N2O isotope budget

NASA Astrophysics Data System (ADS)

Pérez, T.; García, D.; Trumbore, S.; Tyler, S.; de Camargo, P.; Moreira, M.; Piccolo, M.; Park, S.; Boering, K.; Cerri, C.

2003-04-01

Tropical rain forest soils are the largest natural source of N2O to the atmosphere. Uncertainty in the signature of this source limits the utility of isotopes in constraining the global N2O budget. Differentiating the relative contribution of nitrification and denitrification to the emitted N2O using stable isotopes has been difficult due to the lack of enrichment factors values for each process measured in situ. We have devised a method for measuring enrichment factors using soil incubation experiments. We selected three Amazon rain forest soils: (1) Clay and (2) Sandy from Santarem, Pará State, and (3) Sandy from Nova Vida Farm, Rondonia State, Brazil. The enrichment factor values for nitrification and denitrification are: -97.8±4.2 and -9.9±3.8 per mil for clay Santarem soil, -86.8±4.3 and -45.2±4.5 per mil for sandy Santarem soil and-112.6±3.8 and -10.4±3.5 per mil for Nova Vida Farm soils, respectively. Our results show that enrichment factors for both processes differ with soil texture and location. The enrichment factors for nitrification are significantly smaller than the range reported in the literature (-66 to -42 per mil). Also, the enrichment factors for the Santarem soils (clay and sandy) differ significantly implying that soil texture (which will affect the soil air filled pore space at a given water content) is influencing the bacteria isotopic discrimination. However, the enrichment factors for the Santarem clay sand Nova Vida sandy soils do not differ by much. This suggests that the enrichment factors not only can be affected by texture but also by the microbial fauna present in these soils. We also determined the measurement of the N2O positional dependence. N2O is a linear molecule with two nitrogen atoms. The 15N isotope can be located in either the central nitrogen (alpha position) or in the terminal nitrogen (beta position). The isotopomer site preference (15N alpha - 15N beta) can be used to differentiate processes of production and

Investigation on interfacial and electrical properties of Ge MOS capacitor with different NH3-plasma treatment procedure

NASA Astrophysics Data System (ADS)

Liu, Xiaoyu; Xu, Jingping; Liu, Lu; Cheng, Zhixiang; Huang, Yong; Gong, Jingkang

2017-08-01

The effects of different NH3-plasma treatment procedures on interfacial and electrical properties of Ge MOS capacitors with stacked gate dielectric of HfTiON/TaON were investigated. The NH3-plasma treatment was performed at different steps during fabrication of the stacked gate dielectric, i.e. before or after interlayer (TaON) deposition, or after deposition of high-k dielectric (HfTiON). It was found that the excellent interface quality with an interface-state density of 4.79 × 1011 eV-1 cm-2 and low gate leakage current (3.43 × 10-5 A/cm2 at {V}{{g}}=1 {{V}}) could be achieved for the sample with NH3-plasma treatment directly on the Ge surface before TaON deposition. The involved mechanisms are attributed to the fact that the NH3-plasma can directly react with the Ge surface to form more Ge-N bonds, i.e. more GeO x Ny, which effectively blocks the inter-diffusion of elements and suppresses the formation of unstable GeO x interfacial layer, and also passivates oxygen vacancies and dangling bonds near/at the interface due to more N incorporation and decomposed H atoms from the NH3-plasma. Project supported by the National Natural Science Foundation of China (Nos. 61176100, 61274112).

N2O molecular tagging velocimetry

NASA Astrophysics Data System (ADS)

ElBaz, A. M.; Pitz, R. W.

2012-03-01

A new seeded velocity measurement technique, N2O molecular tagging velocimetry (MTV), is developed to measure velocity in wind tunnels by photochemically creating an NO tag line. Nitrous oxide "laughing gas" is seeded into the air flow. A 193 nm ArF excimer laser dissociates the N2O to O(1D) that subsequently reacts with N2O to form NO. O2 fluorescence induced by the ArF laser "writes" the original position of the NO line. After a time delay, the shifted NO line is "read" by a 226-nm laser sheet and the velocity is determined by time-of-flight. At standard atmospheric conditions with 4% N2O in air, ˜1000 ppm of NO is photochemically created in an air jet based on experiment and simulation. Chemical kinetic simulations predict 800-1200 ppm of NO for 190-750 K at 1 atm and 850-1000 ppm of NO for 0.25-1 atm at 190 K. Decreasing the gas pressure (or increasing the temperature) increases the NO ppm level. The presence of humid air has no significant effect on NO formation. The very short NO formation time (<10 ns) makes the N2O MTV method amenable to low- and high-speed air flow measurements. The N2O MTV technique is demonstrated in air jet to measure its velocity profile. The N2O MTV method should work in other gas flows as well (e.g., helium) since the NO tag line is created by chemical reaction of N2O with O(1D) from N2O photodissociation and thus does not depend on the bulk gas composition.

Potassium (2,2'-bipyridine-κN,N')bis-(carbonato-κO,O')cobaltate(III) dihydrate.

PubMed

Wang, Jian-Fei; Lin, Jian-Li

2010-09-30

In the title compound, K[Co(CO(3))(2)(C(10)H(8)N(2))]·2H(2)O, the Co(III) atom is coordinated by two bipyridine N atoms and four O atoms from two bidentate chelating carbonate anions, and thus adopts a distorted octa-hedral N(2)O(4) environment. The [Co(bipy)(CO(3))(2)](-) (bipy is 2,2'-bipyridine) -units are stacked along [100] via π-π stacking inter-actions, with inter-planar distances between the bipyridine rings of 3.36 (4) and 3.44 (6) Å, forming chains. Classical O-H⋯O hydrogen-bonding inter-actions link the chains, forming channels along (100) in which the K(+) ions reside and leading to a three-dimensional supra-molecular architecture.

Strategies to mitigate N2O emissions from biological nitrogen removal systems.

PubMed

Desloover, Joachim; Vlaeminck, Siegfried E; Clauwaert, Peter; Verstraete, Willy; Boon, Nico

2012-06-01

N2O emissions from the biological treatment of sewage, manure, landfill leachates and industrial effluents have gained considerable interest among policy makers and environmental scientists. Estimated global emission rates from these sources can contribute up to 10% of the anthropogenic N2O emissions. Particularly at the level of a treatment plant, the N2O impact can be very significant and reach up to 80% of the operational CO2 footprint. Imperfect nitritation by an imbalance in the two-step nitritation metabolism of ammonia-oxidizing bacteria is considered as the main contributor to N2O production with hydroxylamine and particularly nitrite as key precursors. Monitoring of these compounds is warranted to understand and abate N2O emissions. Mitigation strategies should also comprise optimizations of the process parameters as well as bio-augmentative approaches empowered to restore the functional capacity and to deal with unwanted accumulation of intermediates. These strategies require validation for their effectiveness and costs at full-scale. Copyright © 2012 Elsevier Ltd. All rights reserved.

Conversion of nitrogen oxides in N2:O2:CO2 and N2:O2:CO2:NO2 mixtures subjected to a dc corona discharge

NASA Astrophysics Data System (ADS)

Dors, Mirosław; Mizeraczyk, Jerzy

1996-10-01

This paper concerns the influence of a direct current (dc) corona discharge on production and reduction of NO, NO2 and N2O in N2:O2:CO2 and N2:O2:CO2:NO2 mixtures. The corona discharge was generated in a needle-to-plate reactor. The positively polarized electrode consisted of 7 needles. The grounded electrode was a stainless steel plate. The gas flow rate through the reactor was varied from 28 to 110 cm3/s. The time-averaged discharge current ranged from 0 to 6 mA. It was found that in the N2:O2:CO2 mixture the corona discharge produced NO, NO2 and N2O. In the N2:O2:CO2:NO2 mixture the reduction of NO2 was between 6-56%, depending on the concentration of O2, gas flow rate and corona discharge current. The NO2 reduction was accompanied by production of NO and N2O. The results show that efficient reduction of nitrogen oxides by a corona discharge cannot be expected in the mixtures containing N2 and O2 if reducing additives are not employed.

Infrared spectra of seeded hydrogen clusters: (para-H2)N-N2O and (ortho-H2)N-N2O, N = 2-13.

PubMed

Tang, Jian; McKellar, A R W

2005-09-15

High-resolution infrared spectra of clusters containing para-H2 and/or ortho-H2 and a single nitrous oxide molecule are studied in the 2225-cm(-1) region of the upsilon1 fundamental band of N2O. The clusters are formed in pulsed supersonic jet expansions from a cooled nozzle and probed using a tunable infrared diode laser spectrometer. The simple symmetric rotor-type spectra generally show no resolved K structure, with prominent Q-branch features for ortho-H2 but not para-H2 clusters. The observed vibrational shifts and rotational constants are reported. There is no obvious indication of superfluid effects for para-H2 clusters up to N=13. Sharp transitions due to even larger clusters are observed, but no definite assignments are possible. Mixed (para-H2)N-(ortho-H2)M-N2O cluster line positions can be well predicted by linear interpolation between the corresponding transitions of the pure clusters.

Estimating N2O processes during grassland renewal and grassland conversion to maize cropping using N2O isotopocules

NASA Astrophysics Data System (ADS)

Buchen, Caroline; Well, Reinhard; Flessa, Heinz; Fuß, Roland; Helfrich, Mirjam; Lewicka-Szczebak, Dominika

2017-04-01

Grassland break-up due to grassland renewal and grassland conversion to cropland can lead to a flush of mineral nitrogen from decomposition of the old grass sward and the decomposition of soil organic matter. Moreover, increased carbon and nitrogen mineralisation can result in enhanced nitrous oxide (N2O) emissions. As N2O is known to be an important greenhouse gas and a major precursor for ozone depletion, its emissions need to be mitigated by adjusting agricultural management practices. Therefore, it is necessary to understand the N2O processes involved, as well as the contribution of N2O reduction to N2. Apart from the widely used 15N gas flux method, natural abundance isotopic analysis of the four most abundant isotopocules of N2O species is a promising alternative to assess N2O production pathways. We used stable isotope analyses of soil-emitted N2O (δ18ON2O, δ15NN2Obulk and δ15NN2OSP= intramolecular distribution of 15N within the linear N2O molecule) with an isotopocule mapping approach to simultaneously estimate the magnitude of N2O reduction to N2 and the fraction of N2O originating from the bacterial denitrification pathway or fungal denitrification and/or nitrification. This approach is based on endmember areas of isotopic values for the N2O produced from different sources reported in the literature. For this purpose, we calculated two main scenarios with different assumptions for N2O produced: N2O is reduced to N2 before residual N2O is mixed with N2O of various sources (Scenario a) and vice versa (Scenario b). Based on this, we applied seven different scenario variations, where we evaluated the range of possible values for the potential N2O production pathways (heterotrophic bacterial denitrification and/or nitrifier denitrification and fungal denitrification and/or nitrification). This was done by using a range of isotopic endmember values and assuming different fractionation factors of N2O reduction in order to find the most reliable scenario