Silicon pixel-detector R&D for CLIC

NASA Astrophysics Data System (ADS)

Nürnberg, A.

2016-11-01

The physics aims at the future CLIC high-energy linear e+e- collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of a few μm, ultra-low mass (~ 0.2%X0 per layer for the vertex region and ~ 1%X0 per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~ 10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analog readout are explored. For the outer tracking region, both hybrid concepts and fully integrated CMOS sensors are under consideration. The feasibility of ultra-thin sensor layers is validated with Timepix3 readout ASICs bump bonded to active edge planar sensors with 50 μm to 150 μm thickness. Prototypes of CLICpix readout ASICs implemented in 6525 nm CMOS technology with 25 μm pixel pitch have been produced. Hybridisation concepts have been developed for interconnecting these chips either through capacitive coupling to active HV-CMOS sensors or through bump-bonding to planar sensors. Recent R&D achievements include results from beam tests with all types of hybrid assemblies. Simulations based on Geant4 and TCAD are used to validate the experimental results and to assess and optimise the performance of various detector designs.

Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yu-Sheng; Liu, Yan-Wei

A new pixel design and driving method for active matrix organic light emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage programming method are proposed and verified using the SPICE simulator. We had employed an appropriate TFT model in SPICE simulation to demonstrate the performance of the pixel circuit. The OLED anode voltage variation error rates are below 0.35% under driving TFT threshold voltage deviation (Δ Vth =± 0.33V). The OLED current non-uniformity caused by the OLED threshold voltage degradation (Δ VTO =+0.33V) is significantly reduced (below 6%). The simulation results show that the pixel design can improve the display image non-uniformity by compensating for the threshold voltage deviation in the driving TFT and the OLED threshold voltage degradation at the same time.

High-Sensitivity X-ray Polarimetry with Amorphous Silicon Active-Matrix Pixel Proportional Counters

NASA Technical Reports Server (NTRS)

Black, J. K.; Deines-Jones, P.; Jahoda, K.; Ready, S. E.; Street, R. A.

2003-01-01

Photoelectric X-ray polarimeters based on pixel micropattern gas detectors (MPGDs) offer order-of-magnitude improvement in sensitivity over more traditional techniques based on X-ray scattering. This new technique places some of the most interesting astronomical observations within reach of even a small, dedicated mission. The most sensitive instrument would be a photoelectric polarimeter at the focus of 2 a very large mirror, such as the planned XEUS. Our efforts are focused on a smaller pathfinder mission, which would achieve its greatest sensitivity with large-area, low-background, collimated polarimeters. We have recently demonstrated a MPGD polarimeter using amorphous silicon thin-film transistor (TFT) readout suitable for the focal plane of an X-ray telescope. All the technologies used in the demonstration polarimeter are scalable to the areas required for a high-sensitivity collimated polarimeter. Leywords: X-ray polarimetry, particle tracking, proportional counter, GEM, pixel readout

The Belle II DEPFET pixel detector

NASA Astrophysics Data System (ADS)

Moser, Hans-Günther; DEPFET Collaboration

2016-09-01

The Belle II experiment at KEK (Tsukuba, Japan) will explore heavy flavour physics (B, charm and tau) at the starting of 2018 with unprecedented precision. Charged particles are tracked by a two-layer DEPFET pixel device (PXD), a four-layer silicon strip detector (SVD) and the central drift chamber (CDC). The PXD will consist of two layers at radii of 14 mm and 22 mm with 8 and 12 ladders, respectively. The pixel sizes will vary, between 50 μm×(55-60) μm in the first layer and between 50 μm×(70-85) μm in the second layer, to optimize the charge sharing efficiency. These innermost layers have to cope with high background occupancy, high radiation and must have minimal material to reduce multiple scattering. These challenges are met using the DEPFET technology. Each pixel is a FET integrated on a fully depleted silicon bulk. The signal charge collected in the 'internal gate' modulates the FET current resulting in a first stage amplification and therefore very low noise. This allows very thin sensors (75 μm) reducing the overall material budget of the detector (0.21% X0). Four fold multiplexing of the column parallel readout allows read out a full frame of the pixel matrix in only 20 μs while keeping the power consumption low enough for air cooling. Only the active electronics outside the detector acceptance has to be cooled actively with a two phase CO2 system. Furthermore the DEPFET technology offers the unique feature of an electronic shutter which allows the detector to operate efficiently in the continuous injection mode of superKEKB.

Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

PubMed

Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

2014-11-01

We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

Calorimetric measurements on Li4C60 and Na4C60

NASA Astrophysics Data System (ADS)

Inaba, Akira; Miyazaki, Yuji; Michałowski, Paweł P.; Gracia-Espino, Eduardo; Sundqvist, Bertil; Wâgberg, Thomas

2015-04-01

We show specific heat data for Na4C60 and Li4C60 in the range 0.4-350 K for samples characterized by Raman spectroscopy and X-ray diffraction. At high temperatures, the two different polymer structures have very similar specific heats both in absolute values and in general trend. The specific heat data are compared with data for undoped polymeric and pristine C60. At high temperatures, a difference in specific heat between the intercalated and undoped C60 polymers of 100 J K-1 mol-1 is observed, in agreement with the Dulong-Petit law. At low temperatures, the specific heat data for Li4C60 and Na4C60 are modified by the stiffening of vibrational and librational molecular motion induced by the polymer bonds. The covalent twin bonds in Li4C60 affect these motions to a somewhat higher degree than the single intermolecular bonds in Na4C60. Below 1 K, the specific heats of both materials become linear in temperature, as expected from the effective dimensionality of the structure. The contribution to the total specific heat from the inserted metal ions can be well described by Einstein functions with TE = 386 K for Li4C60 and TE = 120 K for Na4C60, but for both materials we also observe a Schottky-type contribution corresponding to a first approximation to a two-level system with ΔE = 9.3 meV for Li4C60 and 3.1 meV for Na4C60, probably associated with jumps between closely spaced energy levels inside "octahedral-type" ionic sites. Static magnetic fields up to 9 T had very small effects on the specific heat below 10 K.

Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

DOE PAGES

Adam, W.; Bergauer, T.; Brondolin, E.; ...

2017-08-22

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment’s silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up tomore » $$\\Phi _{eq} = 2 \\times 10^{16}$$  cm$$^{-2}$$ , and an ionising dose of $${\\approx } 5$$  MGy after an integrated luminosity of 3000 fb$$^{-1}$$ . Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. Here in this article, the results obtained from the characterisation of 100 and 200 μm thick p-bulk pad diodes and strip sensors irradiated up to fluences of $$\\Phi _{eq} = 1.3 \\times 10^{16}$$  cm$$^{-2}$$ are shown.« less

Organic Light-Emitting Diode-on-Silicon Pixel Circuit Using the Source Follower Structure with Active Load for Microdisplays

NASA Astrophysics Data System (ADS)

Kwak, Bong-Choon; Lim, Han-Sin; Kwon, Oh-Kyong

2011-03-01

In this paper, we propose a pixel circuit immune to the electrical characteristic variation of organic light-emitting diodes (OLEDs) for organic light-emitting diode-on-silicon (OLEDoS) microdisplays with a 0.4 inch video graphics array (VGA) resolution and a 6-bit gray scale. The proposed pixel circuit is implemented using five p-channel metal oxide semiconductor field-effect transistors (MOSFETs) and one storage capacitor. The proposed pixel circuit has a source follower with a diode-connected transistor as an active load for improving the immunity against the electrical characteristic variation of OLEDs. The deviation in the measured emission current ranges from -0.165 to 0.212 least significant bit (LSB) among 11 samples while the anode voltage of OLED is 0 V. Also, the deviation in the measured emission current ranges from -0.262 to 0.272 LSB in pixel samples, while the anode voltage of OLED varies from 0 to 2.5 V owing to the electrical characteristic variation of OLEDs.

First images of a digital autoradiography system based on a Medipix2 hybrid silicon pixel detector.

PubMed

Mettivier, Giovanni; Montesi, Maria Cristina; Russo, Paolo

2003-06-21

We present the first images of beta autoradiography obtained with the high-resolution hybrid pixel detector consisting of the Medipix2 single photon counting read-out chip bump-bonded to a 300 microm thick silicon pixel detector. This room temperature system has 256 x 256 square pixels of 55 microm pitch (total sensitive area of 14 x 14 mm2), with a double threshold discriminator and a 13-bit counter in each pixel. It is read out via a dedicated electronic interface and control software, also developed in the framework of the European Medipix2 Collaboration. Digital beta autoradiograms of 14C microscale standard strips (containing separate bands of increasing specific activity in the range 0.0038-32.9 kBq g(-1)) indicate system linearity down to a total background noise of 1.8 x 10(-3) counts mm(-2) s(-1). The minimum detectable activity is estimated to be 0.012 Bq for 36,000 s exposure and 0.023 Bq for 10,800 s exposure. The measured minimum detection threshold is less than 1600 electrons (equivalent to about 6 keV Si). This real-time system for beta autoradiography offers lower pixel pitch and higher sensitive area than the previous Medipix1-based system. It has a 14C sensitivity better than that of micro channel plate based systems, which, however, shows higher spatial resolution and sensitive area.

A liquid-crystal-on-silicon color sequential display using frame buffer pixel circuits

NASA Astrophysics Data System (ADS)

Lee, Sangrok

Next generation liquid-crystal-on-silicon (LCOS) high definition (HD) televisions and image projection displays will need to be low-cost and high quality to compete with existing systems based on digital micromirror devices (DMDs), plasma displays, and direct view liquid crystal displays. In this thesis, a novel frame buffer pixel architecture that buffers data for the next image frame while displaying the current frame, offers such a competitive solution is presented. The primary goal of the thesis is to demonstrate the LCOS microdisplay architecture for high quality image projection displays and at potentially low cost. The thesis covers four main research areas: new frame buffer pixel circuits to improve the LCOS performance, backplane architecture design and testing, liquid crystal modes for the LCOS microdisplay, and system integration and demonstration. The design requirements for the LCOS backplane with a 64 x 32 pixel array are addressed and measured electrical characteristics matches to computer simulation results. Various liquid crystal (LC) modes applicable for LCOS microdisplays and their physical properties are discussed. One- and two-dimensional director simulations are performed for the selected LC modes. Test liquid crystal cells with the selected LC modes are made and their electro-optic effects are characterized. The 64 x 32 LCOS microdisplays fabricated with the best LC mode are optically tested with interface circuitry. The characteristics of the LCOS microdisplays are summarized with the successful demonstration.

Investigating the Inverse Square Law with the Timepix Hybrid Silicon Pixel Detector: A CERN [at] School Demonstration Experiment

ERIC Educational Resources Information Center

Whyntie, T.; Parker, B.

2013-01-01

The Timepix hybrid silicon pixel detector has been used to investigate the inverse square law of radiation from a point source as a demonstration of the CERN [at] school detector kit capabilities. The experiment described uses a Timepix detector to detect the gamma rays emitted by an [superscript 241]Am radioactive source at a number of different…

Performance of In-Pixel Circuits for Photon Counting Arrays (PCAs) Based on Polycrystalline Silicon TFTs

PubMed Central

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A.; Lu, Jeng Ping

2017-01-01

Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si) — a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance — information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% FWHM at 70 keV; and the digital components should work well even in the presence of significant TFT variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ~240 and 290 μm. PMID:26878107

Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs.

PubMed

Liang, Albert K; Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A; Lu, Jeng Ping

2016-03-07

Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)-a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance-information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ~240 and 290 μm.

Mass test of AdvanSiD model ASD-NUV3S-P SiliconPMs for the Pixel Timing Counter of the MEG II experiment

NASA Astrophysics Data System (ADS)

Rossella, M.; Bariani, S.; Barnaba, O.; Cattaneo, P. W.; Cervi, T.; Menegolli, A.; Nardò, R.; Prata, M. C.; Romano, E.; Scagliotti, C.; Simonetta, M.; Vercellati, F.

2017-02-01

The MEG II Timing Counter will measure the positron time of arrival with a resolution of 30 ps relying on two arrays of scintillator pixels read out by 6144 Silicon Photomultipliers (SiPMs) from AdvanSiD. They must be characterized, measuring their breakdown voltage, to assure that the gains of the SiPMs of each pixel are as uniform as possible, to maximize the pixel resolution. To do this an automatic test system that can measure sequentially the parameters of 32 devices has been developed.

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.

2016-02-29

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface betweenmore » the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.« less

Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

NASA Astrophysics Data System (ADS)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

2014-03-01

The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

Controlled thermal decomposition of NaSi to derive silicon clathrate compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horie, Hiro-omi; Kikudome, Takashi; Teramura, Kyosuke

Formation conditions of two types of sodium containing silicon clathrate compounds were determined by the controlled thermal decomposition of sodium monosilicide NaSi under vacuum. The decomposition began at 360 deg. C. Much higher decomposition temperatures and the presence of sodium metal vapor were favorable for the formation of type I clathrate compound Na{sub 8}Si{sub 46}. Type II clathrate compound Na{sub x}Si{sub 136} was obtained as a single phase at a decomposition temperature <440 deg. C under the condition without sodium metal vapor. The type I clathrate compound was decomposed to crystalline Si above 520 deg. C. The type II clathratemore » compound was thermally more stable, and retained at least up to 550 deg. C in vacuum. - Graphical Abstract: The optimal condition to prepare type II silicon clathrate Na{sub x}Si{sub 136} with minimal contamination of the type I phase is proposed. The starting NaSi should be thermally decomposed below 440 deg. C, and the rapid removal of Na vapor evolved is essentially important.« less

Characterization of solar-grade silicon produced by the SiF4-Na process

NASA Technical Reports Server (NTRS)

Sanjurjo, A.; Sancier, K. M.; Emerson, R. M.; Leach, S. C.; Minahan, J.

1986-01-01

A process was developed for producing low cost solar grade silicon by the reaction between SiF4 gas and sodium metal. The results of the characterization of the silicon are presented. These results include impurity levels, electronic properties of the silicon after crystal growth, and the performance of solar photovoltaic cells fabricated from wafers of the single crystals. The efficiency of the solar cells fabricated from semiconductor silicon and SiF4-Na silicon was the same.

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure.

PubMed

Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

2017-12-23

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO₂ interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e - rms , low dark current density of 56 pA/cm² at -35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV.

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure

PubMed Central

Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go

2017-01-01

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO2 interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e−rms, low dark current density of 56 pA/cm2 at −35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV. PMID:29295523

A wireless beta-microprobe based on pixelated silicon for in vivo brain studies in freely moving rats

NASA Astrophysics Data System (ADS)

Märk, J.; Benoit, D.; Balasse, L.; Benoit, M.; Clémens, J. C.; Fieux, S.; Fougeron, D.; Graber-Bolis, J.; Janvier, B.; Jevaud, M.; Genoux, A.; Gisquet-Verrier, P.; Menouni, M.; Pain, F.; Pinot, L.; Tourvielle, C.; Zimmer, L.; Morel, C.; Laniece, P.

2013-07-01

The investigation of neurophysiological mechanisms underlying the functional specificity of brain regions requires the development of technologies that are well adjusted to in vivo studies in small animals. An exciting challenge remains the combination of brain imaging and behavioural studies, which associates molecular processes of neuronal communications to their related actions. A pixelated intracerebral probe (PIXSIC) presents a novel strategy using a submillimetric probe for beta+ radiotracer detection based on a pixelated silicon diode that can be stereotaxically implanted in the brain region of interest. This fully autonomous detection system permits time-resolved high sensitivity measurements of radiotracers with additional imaging features in freely moving rats. An application-specific integrated circuit (ASIC) allows for parallel signal processing of each pixel and enables the wireless operation. All components of the detector were tested and characterized. The beta+ sensitivity of the system was determined with the probe dipped into radiotracer solutions. Monte Carlo simulations served to validate the experimental values and assess the contribution of gamma noise. Preliminary implantation tests on anaesthetized rats proved PIXSIC's functionality in brain tissue. High spatial resolution allows for the visualization of radiotracer concentration in different brain regions with high temporal resolution.

Electron imaging with Medipix2 hybrid pixel detector.

PubMed

McMullan, G; Cattermole, D M; Chen, S; Henderson, R; Llopart, X; Summerfield, C; Tlustos, L; Faruqi, A R

2007-01-01

The electron imaging performance of Medipix2 is described. Medipix2 is a hybrid pixel detector composed of two layers. It has a sensor layer and a layer of readout electronics, in which each 55 microm x 55 microm pixel has upper and lower energy discrimination and MHz rate counting. The sensor layer consists of a 300 microm slab of pixellated monolithic silicon and this is bonded to the readout chip. Experimental measurement of the detective quantum efficiency, DQE(0) at 120 keV shows that it can reach approximately 85% independent of electron exposure, since the detector has zero noise, and the DQE(Nyquist) can reach approximately 35% of that expected for a perfect detector (4/pi(2)). Experimental measurement of the modulation transfer function (MTF) at Nyquist resolution for 120 keV electrons using a 60 keV lower energy threshold, yields a value that is 50% of that expected for a perfect detector (2/pi). Finally, Monte Carlo simulations of electron tracks and energy deposited in adjacent pixels have been performed and used to calculate expected values for the MTF and DQE as a function of the threshold energy. The good agreement between theory and experiment allows suggestions for further improvements to be made with confidence. The present detector is already very useful for experiments that require a high DQE at very low doses.

3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Micelli, A.; /INFN, Trieste /Udine U.; Helle, K.

2012-04-30

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology ismore » an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.« less

X-ray characterization of a multichannel smart-pixel array detector.

PubMed

Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

2016-01-01

The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 × 48 pixels, each 130 µm × 130 µm × 520 µm thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.

A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

NASA Astrophysics Data System (ADS)

Ching-Lin Fan,; Yi-Yan Lin,; Jyu-Yu Chang,; Bo-Jhang Sun,; Yan-Wei Liu,

2010-06-01

This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (Δ VTH = ± 0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yi-Yan; Chang, Jyu-Yu; Sun, Bo-Jhang; Liu, Yan-Wei

2010-06-01

This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (ΔVTH = ±0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

On the performance of large monolithic LaCl3(Ce) crystals coupled to pixelated silicon photosensors

NASA Astrophysics Data System (ADS)

Olleros, P.; Caballero, L.; Domingo-Pardo, C.; Babiano, V.; Ladarescu, I.; Calvo, D.; Gramage, P.; Nacher, E.; Tain, J. L.; Tolosa, A.

2018-03-01

We investigate the performance of large area radiation detectors, with high energy- and spatial-resolution, intended for the development of a Total Energy Detector with gamma-ray imaging capability, so-called i-TED. This new development aims for an enhancement in detection sensitivity in time-of-flight neutron capture measurements, versus the commonly used C6D6 liquid scintillation total-energy detectors. In this work, we study in detail the impact of the readout photosensor on the energy response of large area (50×50 mm2) monolithic LaCl3(Ce) crystals, in particular when replacing a conventional mono-cathode photomultiplier tube by an 8×8 pixelated silicon photomultiplier. Using the largest commercially available monolithic SiPM array (25 cm2), with a pixel size of 6×6 mm2, we have measured an average energy resolution of 3.92% FWHM at 662 keV for crystal thicknesses of 10, 20 and 30 mm. The results are confronted with detailed Monte Carlo (MC) calculations, where optical processes and properties have been included for the reliable tracking of the scintillation photons. After the experimental validation of the MC model, we use our MC code to explore the impact of a smaller photosensor segmentation on the energy resolution. Our optical MC simulations predict only a marginal deterioration of the spectroscopic performance for pixels of 3×3 mm2.

Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project

NASA Astrophysics Data System (ADS)

Paolozzi, L.; Bandi, Y.; Benoit, M.; Cardarelli, R.; Débieux, S.; Forshaw, D.; Hayakawa, D.; Iacobucci, G.; Kaynak, M.; Miucci, A.; Nessi, M.; Ratib, O.; Ripiccini, E.; Rücker, H.; Valerio, P.; Weber, M.

2018-04-01

The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on state-of-the-art SiGe BiCMOS technology. The first ASIC prototype for the TT-PET was produced and tested in the laboratory and with minimum ionizing particles. The electronics exhibit an equivalent noise charge below 600 e‑ RMS and a pulse rise time of less than 2 ns , in accordance with the simulations. The pixels with a capacitance of 0.8 pF were measured to have a detection efficiency greater than 99% and, although in the absence of the post-processing, a time resolution of approximately 200 ps .

Calorimetric measurements on Li{sub 4}C{sub 60} and Na{sub 4}C{sub 60}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inaba, Akira; Miyazaki, Yuji; Michałowski, Paweł P.

2015-04-28

We show specific heat data for Na{sub 4}C{sub 60} and Li{sub 4}C{sub 60} in the range 0.4-350 K for samples characterized by Raman spectroscopy and X-ray diffraction. At high temperatures, the two different polymer structures have very similar specific heats both in absolute values and in general trend. The specific heat data are compared with data for undoped polymeric and pristine C{sub 60}. At high temperatures, a difference in specific heat between the intercalated and undoped C{sub 60} polymers of 100 J K{sup −1} mol{sup −1} is observed, in agreement with the Dulong-Petit law. At low temperatures, the specific heatmore » data for Li{sub 4}C{sub 60} and Na{sub 4}C{sub 60} are modified by the stiffening of vibrational and librational molecular motion induced by the polymer bonds. The covalent twin bonds in Li{sub 4}C{sub 60} affect these motions to a somewhat higher degree than the single intermolecular bonds in Na{sub 4}C{sub 60}. Below 1 K, the specific heats of both materials become linear in temperature, as expected from the effective dimensionality of the structure. The contribution to the total specific heat from the inserted metal ions can be well described by Einstein functions with T{sub E} = 386 K for Li{sub 4}C{sub 60} and T{sub E} = 120 K for Na{sub 4}C{sub 60}, but for both materials we also observe a Schottky-type contribution corresponding to a first approximation to a two-level system with ΔE = 9.3 meV for Li{sub 4}C{sub 60} and 3.1 meV for Na{sub 4}C{sub 60}, probably associated with jumps between closely spaced energy levels inside “octahedral-type” ionic sites. Static magnetic fields up to 9 T had very small effects on the specific heat below 10 K.« less

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

NASA Astrophysics Data System (ADS)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

Gossip: Gaseous pixels

NASA Astrophysics Data System (ADS)

Koffeman, E. N.

2007-12-01

Several years ago a revolutionary miniature TPC was developed using a pixel chip with a Micromegas foil spanned over it. To overcome the mechanical stability problems and improve the positioning accuracy while spanning a foil on top of a small readout chip a process has been developed in which a Micromegas-like grid is applied on a CMOS wafer in a post-processing step. This aluminum grid is supported on insulating pillars that are created by etching after the grid has been made. The energy resolution (measured on the absorption of the X-rays from a 55Fe source) was remarkably good. Several geometries have since been tested and we now believe that a Gas On Slimmed Silicon Pixel chip' (Gossip) may be realized. The drift region of such a gaseous pixel detector would be reduced to a millimeter. Such a detector is potentially very radiation hard (SLHC vertexing) but aging and sparking must be eliminated.

Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors

NASA Astrophysics Data System (ADS)

Shin, Hee-Sun; Lee, Won-Kyu; Park, Sang-Guen; Kuk, Seung-Hee; Han, Min-Koo

2009-03-01

A new hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) pixel circuit for active-matrix organic light emission diodes (AM-OLEDs), which significantly compensates the OLED current degradation by memorizing the threshold voltage of driving TFT and suppresses the threshold voltage shift of a-Si:H TFTs by negative bias annealing, is proposed and fabricated. During the first half of each frame, the driving TFT of the proposed pixel circuit supplies current to the OLED, which is determined by modified data voltage in the compensation scheme. The proposed pixel circuit was able to compensate the threshold voltage shift of the driving TFT as well as the OLED. During the remaining half of each frame, the proposed pixel circuit induces the recovery of the threshold voltage degradation of a-Si:H TFTs owing to the negative bias annealing. The experimental results show that the proposed pixel circuit was able to successfully compensate for the OLED current degradation and suppress the threshold voltage degradation of the driving TFT.

Pixel structures to compensate nonuniform threshold voltage and mobility of polycrystalline silicon thin-film transistors using subthreshold current for large-size active matrix organic light-emitting diode displays

NASA Astrophysics Data System (ADS)

Na, Jun-Seok; Kwon, Oh-Kyong

2014-01-01

We propose pixel structures for large-size and high-resolution active matrix organic light-emitting diode (AMOLED) displays using a polycrystalline silicon (poly-Si) thin-film transistor (TFT) backplane. The proposed pixel structures compensate the variations of the threshold voltage and mobility of the driving TFT using the subthreshold current. The simulated results show that the emission current error of the proposed pixel structure B ranges from -2.25 to 2.02 least significant bit (LSB) when the variations of the threshold voltage and mobility of the driving TFT are ±0.5 V and ±10%, respectively.

Evaluation of a hybrid pixel detector for electron microscopy.

PubMed

Faruqi, A R; Cattermole, D M; Henderson, R; Mikulec, B; Raeburn, C

2003-04-01

We describe the application of a silicon hybrid pixel detector, containing 64 by 64 pixels, each 170 microm(2), in electron microscopy. The device offers improved resolution compared to CCDs along with faster and noiseless readout. Evaluation of the detector, carried out on a 120 kV electron microscope, demonstrates the potential of the device.

The Belle II DEPFET pixel detector

NASA Astrophysics Data System (ADS)

Lütticke, F.

2013-02-01

The existing Japanese Flavour Factory (KEKB) is currently being upgraded and is foreseen to be comissioned by 2014. The new e+e- collider (SuperKEKB) will have an instantaneous luminosity of 8 × 1035cm-2s-1, 40 times higher than the current world record set by KEKB. In order to handle the increased event rate and the higher background and provide high data quality, the Belle detector is upgraded to Belle II. The increased particle rate requires a new vertex pixel detector with high granularity. This silicon detector will be based on DEPFET technology and will consist of two layers of active pixel sensors. By integrating a field effect transistor into every pixel on top of a fully depleted bulk, the DEPFET technology combines detection and in-pixel amplification. This technology allows good signal to noise performance with a very low material budget.

Fully 3D-Integrated Pixel Detectors for X-Rays

DOE PAGES

Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul; ...

2016-01-01

The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch,more » yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e - rms and a conversion gain of 69.5 μV/e - with 2.6 e - rms and 2.7 μV/e - rms pixel-to-pixel variations, respectively, were measured.« less

Status and Plan for The Upgrade of The CMS Pixel Detector

NASA Astrophysics Data System (ADS)

Lu, Rong-Shyang; CMS Collaboration

2016-04-01

The silicon pixel detector is the innermost component of the CMS tracking system and plays a crucial role in the all-silicon CMS tracker. While the current pixel tracker is designed for and performing well at an instantaneous luminosity of up to 1 ×1034cm-2s-1, it can no longer be operated efficiently at significantly higher values. Based on the strong performance of the LHC accelerator, it is anticipated that peak luminosities of two times the design luminosity are likely to be reached before 2018 and perhaps significantly exceeded in the running period until 2022, referred to as LHC Run 3. Therefore, an upgraded pixel detector, referred to as the phase 1 upgrade, is planned for the year-end technical stop in 2016. With a new pixel readout chip (ROC), an additional fourth layer, two additional endcap disks, and a significantly reduced material budget the upgraded pixel detector will be able to sustain the efficiency of the pixel tracker at the increased requirements imposed by high luminosities and pile-up. The main new features of the upgraded pixel detector will be an ultra-light mechanical design, a digital readout chip with higher rate capability and a new cooling system. These and other design improvements, along with results of Monte Carlo simulation studies for the expected performance of the new pixel detector, will be discussed and compared to those of the current CMS detector.

SVGA AMOLED with world's highest pixel pitch

NASA Astrophysics Data System (ADS)

Prache, Olivier; Wacyk, Ihor

2006-05-01

We present the design and early evaluation results of the world's highest pixel pitch full-color 800x3x600- pixel, active matrix organic light emitting diode (AMOLED) color microdisplay for consumer and environmentally demanding applications. The design premises were aimed at improving small area uniformity as well as reducing the pixel size while expanding the functionality found in existing eMagin Corporations' microdisplay products without incurring any power consumption degradation when compared to existing OLED microdisplays produced by eMagin. The initial results of the first silicon prototype presented here demonstrate compliance with all major objectives as well as the validation of a new adaptive gamma correction technique that can operate automatically over temperature.

X-ray tests of a microchannel plate detector and amorphous silicon pixel array readout for neutron radiography

NASA Astrophysics Data System (ADS)

Ambrosi, R. M.; Street, R.; Feller, B.; Fraser, G. W.; Watterson, J. I. W.; Lanza, R. C.; Dowson, J.; Ross, D.; Martindale, A.; Abbey, A. F.; Vernon, D.

2007-03-01

High-performance large area imaging detectors for fast neutrons in the 5-14 MeV energy range do not exist at present. The aim of this project is to combine microchannel plates or MCPs (or similar electron multiplication structures) traditionally used in image intensifiers and X-ray detectors with amorphous silicon (a-Si) pixel arrays to produce a composite converter and intensifier position sensitive imaging system. This detector will provide an order of magnitude improvement in image resolution when compared with current millimetre resolution limits obtained using phosphor or scintillator-based hydrogen rich converters. In this study we present the results of the initial experimental evaluation of the prototype system. This study was carried out using a medical X-ray source for the proof of concept tests, the next phase will involve neutron imaging tests. The hybrid detector described in this study is a unique development and paves the way for large area position sensitive detectors consisting of MCP or microsphere plate detectors and a-Si or polysilicon pixel arrays. Applications include neutron and X-ray imaging for terrestrial applications. The technology could be extended to space instrumentation for X-ray astronomy.

Modeling of Pixelated Detector in SPECT Pinhole Reconstruction.

PubMed

Feng, Bing; Zeng, Gengsheng L

2014-04-10

A challenge for the pixelated detector is that the detector response of a gamma-ray photon varies with the incident angle and the incident location within a crystal. The normalization map obtained by measuring the flood of a point-source at a large distance can lead to artifacts in reconstructed images. In this work, we investigated a method of generating normalization maps by ray-tracing through the pixelated detector based on the imaging geometry and the photo-peak energy for the specific isotope. The normalization is defined for each pinhole as the normalized detector response for a point-source placed at the focal point of the pinhole. Ray-tracing is used to generate the ideal flood image for a point-source. Each crystal pitch area on the back of the detector is divided into 60 × 60 sub-pixels. Lines are obtained by connecting between a point-source and the centers of sub-pixels inside each crystal pitch area. For each line ray-tracing starts from the entrance point at the detector face and ends at the center of a sub-pixel on the back of the detector. Only the attenuation by NaI(Tl) crystals along each ray is assumed to contribute directly to the flood image. The attenuation by the silica (SiO 2 ) reflector is also included in the ray-tracing. To calculate the normalization for a pinhole, we need to calculate the ideal flood for a point-source at 360 mm distance (where the point-source was placed for the regular flood measurement) and the ideal flood image for the point-source at the pinhole focal point, together with the flood measurement at 360 mm distance. The normalizations are incorporated in the iterative OSEM reconstruction as a component of the projection matrix. Applications to single-pinhole and multi-pinhole imaging showed that this method greatly reduced the reconstruction artifacts.

Evaluation of a single-pixel one-transistor active pixel sensor for fingerprint imaging

NASA Astrophysics Data System (ADS)

Xu, Man; Ou, Hai; Chen, Jun; Wang, Kai

2015-08-01

Since it first appeared in iPhone 5S in 2013, fingerprint identification (ID) has rapidly gained popularity among consumers. Current fingerprint-enabled smartphones unanimously consists of a discrete sensor to perform fingerprint ID. This architecture not only incurs higher material and manufacturing cost, but also provides only static identification and limited authentication. Hence as the demand for a thinner, lighter, and more secure handset grows, we propose a novel pixel architecture that is a photosensitive device embedded in a display pixel and detects the reflected light from the finger touch for high resolution, high fidelity and dynamic biometrics. To this purpose, an amorphous silicon (a-Si:H) dual-gate photo TFT working in both fingerprint-imaging mode and display-driving mode will be developed.

Energy deposition measurements of single 1H, 4He and 12C ions of therapeutic energies in a silicon pixel detector

NASA Astrophysics Data System (ADS)

Gehrke, T.; Burigo, L.; Arico, G.; Berke, S.; Jakubek, J.; Turecek, D.; Tessonnier, T.; Mairani, A.; Martišíková, M.

2017-04-01

In the field of ion-beam radiotherapy and space applications, measurements of the energy deposition of single ions in thin layers are of interest for dosimetry and imaging. The present work investigates the capability of a pixelated detector Timepix to measure the energy deposition of single ions in therapeutic proton, helium- and carbon-ion beams in a 300 μm-thick sensitive silicon layer. For twelve different incident beams, the measured energy deposition distributions of single ions are compared to the expected energy deposition spectra, which were predicted by detailed Monte Carlo simulations using the FLUKA code. A methodology for the analysis of the measured data is introduced in order to identify and reject signals that are either degraded or caused by multiple overlapping ions. Applying a newly proposed linear recalibration, the energy deposition measurements are in good agreement with the simulations. The twelve measured mean energy depositions between 0.72 MeV/mm and 56.63 MeV/mm in a partially depleted silicon sensor do not deviate more than 7% from the corresponding simulated values. Measurements of energy depositions above 10 MeV/mm with a fully depleted sensor are found to suffer from saturation effects due to the too high per-pixel signal. The utilization of thinner sensors, in which a lower signal is induced, could further improve the performance of the Timepix detector for energy deposition measurements.

Study of run time errors of the ATLAS pixel detector in the 2012 data taking period

NASA Astrophysics Data System (ADS)

Gandrajula, Reddy Pratap

The high resolution silicon Pixel detector is critical in event vertex reconstruction and in particle track reconstruction in the ATLAS detector. During the pixel data taking operation, some modules (Silicon Pixel sensor +Front End Chip+ Module Control Chip (MCC)) go to an auto-disable state, where the Modules don't send the data for storage. Modules become operational again after reconfiguration. The source of the problem is not fully understood. One possible source of the problem is traced to the occurrence of single event upset (SEU) in the MCC. Such a module goes to either a Timeout or Busy state. This report is the study of different types and rates of errors occurring in the Pixel data taking operation. Also, the study includes the error rate dependency on Pixel detector geometry.

Status and Construction of the Belle II DEPFET pixel system

NASA Astrophysics Data System (ADS)

Lütticke, Florian

2014-06-01

DEpleted P-channel Field Effect Transistor (DEPFET) active pixel detectors combine detection with a first amplification stage in a fully depleted detector, resulting in an superb signal-to-noise ratio even for thin sensors. Two layers of thin (75 micron) silicon DEPFET pixels will be used as the innermost vertex system, very close to the beam pipe in the Belle II detector at the SuperKEKB facility. The status of the 8 million DEPFET pixels detector, latest developments and current system tests will be discussed.

A new LTPS TFT AC pixel circuit for an AMOLED

NASA Astrophysics Data System (ADS)

Yongwen, Zhang; Wenbin, Chen

2013-01-01

This work presents a new voltage programmed pixel circuit for an active-matrix organic light-emitting diode (AMOLED) display. The proposed pixel circuit consists of six low temperature polycrystalline silicon thin-film transistors (LTPS TFTs), one storage capacitor, and one OLED, and is verified by simulation work using HSPICE software. Besides effectively compensating for the threshold voltage variation of the driving TFT and OLED, the proposed pixel circuit offers an AC driving mode for the OLED, which can suppress the degradation of the OLED. Moreover, a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.

Controlled thermal decomposition of NaSi to derive silicon clathrate compounds

NASA Astrophysics Data System (ADS)

Horie, Hiro-omi; Kikudome, Takashi; Teramura, Kyosuke; Yamanaka, Shoji

2009-01-01

Formation conditions of two types of sodium containing silicon clathrate compounds were determined by the controlled thermal decomposition of sodium monosilicide NaSi under vacuum. The decomposition began at 360 °C. Much higher decomposition temperatures and the presence of sodium metal vapor were favorable for the formation of type I clathrate compound Na 8Si 46. Type II clathrate compound Na xSi 136 was obtained as a single phase at a decomposition temperature <440 °C under the condition without sodium metal vapor. The type I clathrate compound was decomposed to crystalline Si above 520 °C. The type II clathrate compound was thermally more stable, and retained at least up to 550 °C in vacuum.

Lowest-energy structures of (C60)nX (X=Li+,Na+,K+,Cl-) and (C60)nYCl (Y=Li,Na,K) clusters for n

PubMed

Hernández-Rojas, J; Bretón, J; Gomez Llorente, J M; Wales, D J

2004-12-22

Basin-hopping global optimization is used to find likely candidates for the lowest minima on the potential energy surface of (C(60))(n)X (X=Li(+),Na(+),K(+),Cl(-)) and (C(60))(n)YCl (Y=Li,Na,K) clusters with n60) intermolecular potential along with a polarization potential, which depends on the first few nonvanishing C(60) multipole polarizabilities. We find that the ions occupy interstitial sites of a (C(60))(n) cluster, the coordination shell being triangular for Li(+), tetrahedral for Na(+) and K(+), and octahedral for Cl(-). When the required coordination site does not exist in the corresponding (C(60))(n) global minimum, the lowest minimum of the doped system may be based on an alternative geometry. This situation is particularly common in the Cl(-) complexes, where the (C(60))(n) global minima with icosahedral packing change into decahedral or closed-packed forms for the ions. In all the ions we find a significant binding energy for the doped cluster. In the alkali chloride complexes the preferred coordination for the diatomic moiety is octahedral and is basically determined by the Cl(-) ion. However, the smaller polarization energies in this case mean that a change in structure from the (C(60))(n) global minimum does not necessarily occur if there is no octahedral site. (c) 2004 American Institute of Physics.

Measurements with MÖNCH, a 25 μm pixel pitch hybrid pixel detector

NASA Astrophysics Data System (ADS)

Ramilli, M.; Bergamaschi, A.; Andrae, M.; Brückner, M.; Cartier, S.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Hutwelker, T.; Lopez-Cuenca, C.; Mezza, D.; Mozzanica, A.; Ruat, M.; Redford, S.; Schmitt, B.; Shi, X.; Tinti, G.; Zhang, J.

2017-01-01

MÖNCH is a hybrid silicon pixel detector based on charge integration and with analog readout, featuring a pixel size of 25×25 μm2. The latest working prototype consists of an array of 400×400 identical pixels for a total active area of 1×1 cm2. Its design is optimized for the single photon regime. An exhaustive characterization of this large area prototype has been carried out in the past months, and it confirms an ENC in the order of 35 electrons RMS and a dynamic range of ~4×12 keV photons in high gain mode, which increases to ~100×12 keV photons with the lowest gain setting. The low noise levels of MÖNCH make it a suitable candidate for X-ray detection at energies around 1 keV and below. Imaging applications in particular can benefit significantly from the use of MÖNCH: due to its extremely small pixel pitch, the detector intrinsically offers excellent position resolution. Moreover, in low flux conditions, charge sharing between neighboring pixels allows the use of position interpolation algorithms which grant a resolution at the micrometer-level. Its energy reconstruction and imaging capabilities have been tested for the first time at a low energy beamline at PSI, with photon energies between 1.75 keV and 3.5 keV, and results will be shown.

Silicon oxidation in fluoride solutions

NASA Technical Reports Server (NTRS)

Sancier, K. M.; Kapur, V.

1980-01-01

Silicon is produced in a NaF, Na2SiF6, and Na matrix when SiF4 is reduced by metallic sodium. Hydrogen is evolved during acid leaching to separate the silicon from the accompanying reaction products, NaF and Na2SiF6. The hydrogen evolution reaction was studied under conditions simulating leaching conditions by making suspensions of the dry silicon powder in aqueous fluoride solutions. The mechanism for the hydrogen evolution is discussed in terms of spontaneous oxidation of silicon resulting from the cooperative effects of (1) elemental sodium in the silicon that reacts with water to remove a protective silica layer, leaving clean reactive silicon, and (2) fluoride in solution that complexes with the oxidized silicon in solution and retards formation of a protective hydrous oxide gel.

The TT-PET project: a thin TOF-PET scanner based on fast novel silicon pixel detectors

NASA Astrophysics Data System (ADS)

Bandi, Y.; Benoit, M.; Cadoux, F. R.; Forshaw, D. C.; Hänni, R.; Hayakawa, D.; Iacobucci, G.; Michal, S.; Miucci, A.; Paolozzi, L.; Ratib, O.; Ripiccini, E.; Tognina, C.; Valerio, P.; Weber, M.

2018-01-01

The TT-PET project aims at developing a compact Time-of-flight PET scanner with 30ps time resolution, capable of withstanding high magnetic fields and allowing for integration in a traditional MRI scanner, providing complimentary real-time PET images. The very high timing resolution of the TT-PET scanner is achieved thanks to a new generation of Silicon-Germanium (Si-Ge) amplifiers, which are embedded in monolithic pixel sensors. The scanner is composed of 16 detection towers as well as cooling blocks, arranged in a ring structure. The towers are composed of multiple ultra-thin pixel modules stacked on top of each other. Making it possible to perform depth of interaction measurements and maximize the spatial resolution along the line of flight of the two photons emitted within a patient. This will result in improved image quality, contrast, and uniformity while drastically reducing backgrounds within the scanner. Allowing for a reduction in the amount of radioactivity delivered to the patient. Due to an expected data rate of about 250 MB/s a custom readout system for high data throughput has been developed, which includes noise filtering and reduced data pressure. The realisation of a first scanner prototype for small animals is foreseen by 2019. A general overview of the scanner will be given including, technical details concerning the detection elements, mechanics, DAQ readout, simulation and results.

The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

NASA Astrophysics Data System (ADS)

Zang, A.; Anton, G.; Ballabriga, R.; Bisello, F.; Campbell, M.; Celi, J. C.; Fauler, A.; Fiederle, M.; Jensch, M.; Kochanski, N.; Llopart, X.; Michel, N.; Mollenhauer, U.; Ritter, I.; Tennert, F.; Wölfel, S.; Wong, W.; Michel, T.

2015-04-01

The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation was carried out to use the Dosepix detector as a kVp-meter, that means to determine the applied acceleration voltage from measured X-ray tubes spectra.

GaAs QWIP Array Containing More Than a Million Pixels

NASA Technical Reports Server (NTRS)

Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

2005-01-01

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

Commissioning of the ATLAS pixel detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

ATLAS Collaboration; Golling, Tobias

2008-09-01

The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and summer 2008, and is ready for the imminent LHC turn-on. The highlights of the past and future commissioning activities of themore » ATLAS pixel system are presented.« less

Active Pixel Sensors: Are CCD's Dinosaurs?

NASA Technical Reports Server (NTRS)

Fossum, Eric R.

1993-01-01

Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

NASA Astrophysics Data System (ADS)

Berdalovic, I.; Bates, R.; Buttar, C.; Cardella, R.; Egidos Plaja, N.; Hemperek, T.; Hiti, B.; van Hoorne, J. W.; Kugathasan, T.; Mandic, I.; Maneuski, D.; Marin Tobon, C. A.; Moustakas, K.; Musa, L.; Pernegger, H.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E. J.; Sharma, A.; Snoeys, W.; Solans Sanchez, C.; Wang, T.; Wermes, N.

2018-01-01

The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.

The Belle-II Depfet Pixel Detector at the Superkekb Flavour Factory

NASA Astrophysics Data System (ADS)

Heindl, Stefan

2012-08-01

The ongoing upgrade of the asymmetric electron positron collider KEKB also requires extensive detector upgrades to cope with the new design luminosity of 8 · 1035 cm-2 · s-1 · Of critical importance is the new silicon pixel vertex tracker, which will significantly improve the decay vertex resolution, crucial for time dependent CP violation measurements. This new detector will consist of two layers of DEPFET pixel seii8ors very close to the interaction point. These sensors combine both particle detection and amplification of the signal by embedding a field effect transistor into a 75 μm thick fully depleted silicon substrate, providing very high signal to noise ratios and excellent spatial resolution. Using this technology satisfies the given requirements of extremely low material and high radiation tolerance at the new Belle II experiment. The power dissipation due to continuous readout at high rate and spatial constraints also give strict requirements for the mechanical support and cooling of the new detector. We will discuss the overall concept of the pixel vertex tracker, its expected performance and the challenging mechanical integration.

Monte Carlo Optimization of Crystal Configuration for Pixelated Molecular SPECT Scanners

NASA Astrophysics Data System (ADS)

Mahani, Hojjat; Raisali, Gholamreza; Kamali-Asl, Alireza; Ay, Mohammad Reza

2017-02-01

Resolution-sensitivity-PDA tradeoff is the most challenging problem in design and optimization of pixelated preclinical SPECT scanners. In this work, we addressed such a challenge from a crystal point-of-view by looking for an optimal pixelated scintillator using GATE Monte Carlo simulation. Various crystal configurations have been investigated and the influence of different pixel sizes, pixel gaps, and three scintillators on tomographic resolution, sensitivity, and PDA of the camera were evaluated. The crystal configuration was then optimized using two objective functions: the weighted-sum and the figure-of-merit methods. The CsI(Na) reveals the highest sensitivity of the order of 43.47 cps/MBq in comparison to the NaI(Tl) and the YAP(Ce), for a 1.5×1.5 mm2 pixel size and 0.1 mm gap. The results show that the spatial resolution, in terms of FWHM, improves from 3.38 to 2.21 mm while the sensitivity simultaneously deteriorates from 42.39 cps/MBq to 27.81 cps/MBq when pixel size varies from 2×2 mm2 to 0.5×0.5 mm2 for a 0.2 mm gap, respectively. The PDA worsens from 0.91 to 0.42 when pixel size decreases from 0.5×0.5 mm2 to 1×1 mm2 for a 0.2 mm gap at 15° incident-angle. The two objective functions agree that the 1.5×1.5 mm2 pixel size and 0.1 mm Epoxy gap CsI(Na) configuration provides the best compromise for small-animal imaging, using the HiReSPECT scanner. Our study highlights that crystal configuration can significantly affect the performance of the camera, and thereby Monte Carlo optimization of pixelated detectors is mandatory in order to achieve an optimal quality tomogram.

Simulation study of pixel detector charge digitization

NASA Astrophysics Data System (ADS)

Wang, Fuyue; Nachman, Benjamin; Sciveres, Maurice; Lawrence Berkeley National Laboratory Team

2017-01-01

Reconstruction of tracks from nearly overlapping particles, called Tracking in Dense Environments (TIDE), is an increasingly important component of many physics analyses at the Large Hadron Collider as signatures involving highly boosted jets are investigated. TIDE makes use of the charge distribution inside a pixel cluster to resolve tracks that share one of more of their pixel detector hits. In practice, the pixel charge is discretized using the Time-over-Threshold (ToT) technique. More charge information is better for discrimination, but more challenging for designing and operating the detector. A model of the silicon pixels has been developed in order to study the impact of the precision of the digitized charge distribution on distinguishing multi-particle clusters. The output of the GEANT4-based simulation is used to train neutral networks that predict the multiplicity and location of particles depositing energy inside one cluster of pixels. By studying the multi-particle cluster identification efficiency and position resolution, we quantify the trade-off between the number of ToT bits and low-level tracking inputs. As both ATLAS and CMS are designing upgraded detectors, this work provides guidance for the pixel module designs to meet TIDE needs. Work funded by the China Scholarship Council and the Office of High Energy Physics of the U.S. Department of Energy under contract DE-AC02-05CH11231.

a-Si:H TFT-silicon hybrid low-energy x-ray detector

DOE PAGES

Shin, Kyung -Wook; Karim, Karim S.

2017-03-15

Direct conversion crystalline silicon X-ray imagers are used for low-energy X-ray photon (4-20 keV) detection in scientific research applications such as protein crystallography. In this paper, we demonstrate a novel pixel architecture that integrates a crystalline silicon X-ray detector with a thin-film transistor amorphous silicon pixel readout circuit. We describe a simplified two-mask process to fabricate a complete imaging array and present preliminary results that show the fabricated pixel to be sensitive to 5.89-keV photons from a low activity Fe-55 gamma source. Furthermore, this paper presented can expedite the development of high spatial resolution, low cost, direct conversion imagers formore » X-ray diffraction and crystallography applications.« less

Preliminary test results from a telescope of Hughes pixel arrays at FNAL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jernigan, J.G.; Arens, J.; Vezie, D.

1992-09-01

In December of 1991 three silicon hybrid pixel detectors each having 2.56 [times] 2.56 pixels 30 [mu]m square, made by the Hughes Aircraft Company, were placed in a high energy muon beam at the Fermi National Accelerator Laboratory. Straight tracks were recorded in these detectors at angles to the normal to the plane of the silicon ranging from 0 to 45[degrees]. In this note, preliminary results are presented on the straight through tracks, i.e., those passing through the telescope at normal incidence. Pulse height data, signal-to-noise data, and preliminary straight line fits to the data resulting in residual distributions aremore » presented. Preliminary calculations show spatial resolution of less than 5 [mu]m in two dimensions.« less

Preliminary test results from a telescope of Hughes pixel arrays at FNAL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jernigan, J.G.; Arens, J.; Vezie, D.

1992-09-01

In December of 1991 three silicon hybrid pixel detectors each having 2.56 {times} 2.56 pixels 30 {mu}m square, made by the Hughes Aircraft Company, were placed in a high energy muon beam at the Fermi National Accelerator Laboratory. Straight tracks were recorded in these detectors at angles to the normal to the plane of the silicon ranging from 0 to 45{degrees}. In this note, preliminary results are presented on the straight through tracks, i.e., those passing through the telescope at normal incidence. Pulse height data, signal-to-noise data, and preliminary straight line fits to the data resulting in residual distributions aremore » presented. Preliminary calculations show spatial resolution of less than 5 {mu}m in two dimensions.« less

The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

NASA Astrophysics Data System (ADS)

Horisberger, R.

1990-03-01

It is proposed to combine the technology of fully depleted silicon microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. Teh resulting structure has amplifying properties and is referred to as bipolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking.

The pixel tracking telescope at the Fermilab Test Beam Facility

DOE PAGES

Kwan, Simon; Lei, CM; Menasce, Dario; ...

2016-03-01

An all silicon pixel telescope has been assembled and used at the Fermilab Test Beam Facility (FTBF) since 2009 to provide precise tracking information for different test beam experiments with a wide range of Detectors Under Test (DUTs) requiring high resolution measurement of the track impact point. The telescope is based on CMS pixel modules left over from the CMS forward pixel production. Eight planes are arranged to achieve a resolution of less than 8 μm on the 120 GeV proton beam transverse coordinate at the DUT position. In order to achieve such resolution with 100 × 150 μm 2more » pixel cells, the planes were tilted to 25 degrees to maximize charge sharing between pixels. Crucial for obtaining this performance is the alignment software, called Monicelli, specifically designed and optimized for this system. This paper will describe the telescope hardware, the data acquisition system and the alignment software constituting this particle tracking system for test beam users.« less

The INFN-FBK pixel R&D program for HL-LHC

NASA Astrophysics Data System (ADS)

Meschini, M.; Dalla Betta, G. F.; Boscardin, M.; Calderini, G.; Darbo, G.; Giacomini, G.; Messineo, A.; Ronchin, S.

2016-09-01

We report on the ATLAS and CMS joint research activity, which is aiming at the development of new, thin silicon pixel detectors for the Large Hadron Collider Phase-2 detector upgrades. This R&D is performed under special agreement between Istituto Nazionale di Fisica Nucleare and FBK foundation (Trento, Italy). New generations of 3D and planar pixel sensors with active edges are being developed in the R&D project, and will be fabricated at FBK. A first planar pixel batch, which was produced by the end of year 2014, will be described in this paper. First clean room measurement results on planar sensors obtained before and after neutron irradiation will be presented.

Monolayer of Hydrazine Facilitates the Direct Covalent Attachment of C60 Fullerene to a Silicon Surface.

PubMed

Gao, Fei; Teplyakov, Andrew V

2017-09-05

The development of oxygen-free organic-inorganic interfaces has led to new schemes for the functionalization of silicon surfaces with nitrogen-based chemical groups. However, building layers of large structures directly on this functionalized surface has remained elusive. This work confirms the path to form a stable interface between silicon and buckminsterfullerene C 60 based on covalent chemical bonds. The starting point for this modification is the hydrazine-reacted Si(111) surface with the diamine functionality, which is further reacted directly with the C 60 molecules. The chemistry of this process is confirmed spectroscopically and microscopically and can be used to form organic-inorganic interfaces separated by a single layer of nitrogen.

Characterization of thin irradiated epitaxial silicon sensors for the CMS phase II pixel upgrade

NASA Astrophysics Data System (ADS)

Centis Vignali, M.

2015-02-01

The high-luminosity upgrade of the Large Hadron Collider foreseen for 2023 resulted on the decision to replace the tracker system of the CMS experiment. The innermost layer of the new pixel detector will experience fluences in the order of phieq ≈ 1016 cm-2 and a dose of ≈ 5 MGy after an integrated luminosity of 3000 fb-1. Several materials and designs are under investigation in order to build a detector that can withstand such high fluences. Thin planar silicon sensors are good candidates to achieve this goal since the degradation of the signal produced by traversing particles is less severe than for thicker devices. A study has been carried out in order to characterize highly irradiated planar epitaxial silicon sensors with an active thickness of 100 μm. The investigation includes pad diodes and strip detectors irradiated up to a fluence of phieq = 1.3 × 1016 cm-2, and 3 × 1015 cm-2, respectively. The electrical properties of diodes have been characterized using laboratory measurements, while measurements have been carried out at the DESY II test beam facility to characterize the charge collection of the strip detectors. A beam telescope has been used to determine precisely the impact position of beam particles on the sensor. This allows the unbiased extraction of the charge deposited in the strip sensor and good identification of the noise. In this paper, the results obtained for p-bulk sensors are shown. The charge collection efficiency of the strip sensors is 90% at 1000 V after a fluence of phieq = 3 × 1015 cm-2. The irradiated diodes show charge multiplication effects. The impact of the threshold applied to a detector on its efficiency is also discussed.

Module and electronics developments for the ATLAS ITk pixel system

NASA Astrophysics Data System (ADS)

Muñoz, F. J.

2018-03-01

The ATLAS experiment is preparing for an extensive modification of its detectors in the course of the planned HL-LHC accelerator upgrade around 2025. The ATLAS upgrade includes the replacement of the entire tracking system by an all-silicon detector (Inner Tracker, ITk). The five innermost layers of ITk will be a pixel detector built of new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m2, depending on the final layout choice, which is expected to take place in 2018. In this paper an overview of the ongoing R&D activities on modules and electronics for the ATLAS ITk is given including the main developments and achievements in silicon planar and 3D sensor technologies, readout and power challenges.

Photovoltaic Retinal Prosthesis with High Pixel Density

PubMed Central

Mathieson, Keith; Loudin, James; Goetz, Georges; Huie, Philip; Wang, Lele; Kamins, Theodore I.; Galambos, Ludwig; Smith, Richard; Harris, James S.; Sher, Alexander; Palanker, Daniel

2012-01-01

Retinal degenerative diseases lead to blindness due to loss of the “image capturing” photoreceptors, while neurons in the “image processing” inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation was produced in normal and degenerate rat retinas, with pulse durations from 0.5 to 4 ms, and threshold peak irradiances from 0.2 to 10 mW/mm2, two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 μm bipolar pixel, demonstrating the possibility of a fully-integrated photovoltaic retinal prosthesis with high pixel density. PMID:23049619

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

NASA Astrophysics Data System (ADS)

Benoit, M.; Braccini, S.; Casse, G.; Chen, H.; Chen, K.; Di Bello, F. A.; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, D.; Nessi, M.; Okawa, H.; Perić, I.; Rimoldi, M.; Ristić, B.; Barrero Pinto, M. Vicente; Vossebeld, J.; Weber, M.; Weston, T.; Wu, W.; Xu, L.; Zaffaroni, E.

2018-02-01

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1× 1014 and 5× 1015 1-MeV- neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1× 1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

Active pixel sensor array as a detector for electron microscopy.

PubMed

Milazzo, Anna-Clare; Leblanc, Philippe; Duttweiler, Fred; Jin, Liang; Bouwer, James C; Peltier, Steve; Ellisman, Mark; Bieser, Fred; Matis, Howard S; Wieman, Howard; Denes, Peter; Kleinfelder, Stuart; Xuong, Nguyen-Huu

2005-09-01

A new high-resolution recording device for transmission electron microscopy (TEM) is urgently needed. Neither film nor CCD cameras are systems that allow for efficient 3-D high-resolution particle reconstruction. We tested an active pixel sensor (APS) array as a replacement device at 200, 300, and 400 keV using a JEOL JEM-2000 FX II and a JEM-4000 EX electron microscope. For this experiment, we used an APS prototype with an area of 64 x 64 pixels of 20 microm x 20 microm pixel pitch. Single-electron events were measured by using very low beam intensity. The histogram of the incident electron energy deposited in the sensor shows a Landau distribution at low energies, as well as unexpected events at higher absorbed energies. After careful study, we concluded that backscattering in the silicon substrate and re-entering the sensitive epitaxial layer a second time with much lower speed caused the unexpected events. Exhaustive simulation experiments confirmed the existence of these back-scattered electrons. For the APS to be usable, the back-scattered electron events must be eliminated, perhaps by thinning the substrate to less than 30 microm. By using experimental data taken with an APS chip with a standard silicon substrate (300 microm) and adjusting the results to take into account the effect of a thinned silicon substrate (30 microm), we found an estimate of the signal-to-noise ratio for a back-thinned detector in the energy range of 200-400 keV was about 10:1 and an estimate for the spatial resolution was about 10 microm.

Theoretical investigation of the noise performance of active pixel imaging arrays based on polycrystalline silicon thin film transistors.

PubMed

Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Liang, Albert K; Zhao, Qihua

2017-07-01

Active matrix flat-panel imagers, which typically incorporate a pixelated array with one a-Si:H thin-film transistor (TFT) per pixel, have become ubiquitous by virtue of many advantages, including large monolithic construction, radiation tolerance, and high DQE. However, at low exposures such as those encountered in fluoroscopy, digital breast tomosynthesis and breast computed tomography, DQE is degraded due to the modest average signal generated per interacting x-ray relative to electronic additive noise levels of ~1000 e, or greater. A promising strategy for overcoming this limitation is to introduce an amplifier into each pixel, referred to as the active pixel (AP) concept. Such circuits provide in-pixel amplification prior to readout as well as facilitate correlated multiple sampling, enhancing signal-to-noise and restoring DQE at low exposures. In this study, a methodology for theoretically investigating the signal and noise performance of imaging array designs is introduced and applied to the case of AP circuits based on low-temperature polycrystalline silicon (poly-Si), a semiconductor suited to manufacture of large area, radiation tolerant arrays. Computer simulations employing an analog circuit simulator and performed in the temporal domain were used to investigate signal characteristics and major sources of electronic additive noise for various pixel amplifier designs. The noise sources include photodiode shot noise and resistor thermal noise, as well as TFT thermal and flicker noise. TFT signal behavior and flicker noise were parameterized from fits to measurements performed on individual poly-Si test TFTs. The performance of three single-stage and three two-stage pixel amplifier designs were investigated under conditions relevant to fluoroscopy. The study assumes a 20 × 20 cm 2 , 150 μm pitch array operated at 30 fps and coupled to a CsI:Tl x-ray converter. Noise simulations were performed as a function of operating conditions, including

Polyfluorene light-emitting devices and amorphous silicon:hydrogen TFT pixel circuits for active-matrix organic light-emitting displays

NASA Astrophysics Data System (ADS)

He, Yi

2000-10-01

Organic light-emitting devices (OLEDs) made of single-layer and double-layer polymer thin films have been fabricated and studied. The hole transporting (polymer A) and emissive (polymer B) polymers were poly(9,9' -dioctyl fluorene-2,7-diyl)-co-poly(diphenyl-p-tolyl-amine-4,4 '-diyl) and poly(9,9'-dioctyl fluorene-2,7-diyl)-co-poly(benzothiadiazole 2,5-diyl), respectively. The optical bandgaps of polymer A and B were 2.72 and 2.82 eV, respectively. The photoluminescence (PL) peaks for polymer A and B were 502 and 546 nm, respectively. The electroluminescence (EL) peak for polymer B was 547 nm. No EL has been observed from polymer A single layer OLEDs. To obtain the spectral distribution of the emission properties of the light-emitting devices, a new light-output measurement technique was developed. Using this technique, the spectral distribution of the luminance, radiance, photon density emission can be obtained. Moreover, the device external quantum efficiency calculated using this technique is accurate and insensitive to the light emission spectrum shape. Organic light-emitting devices have been fabricated and studied on both glass and flexible plastic substrates. The OLEDs showed a near-linear relationship between the luminance and the applied current density over four orders of magnitude. For the OLEDs fabricated on the glass substrate, luminance ˜9,300 cd/m2, emission efficiency ˜14.5 cd/A, luminescence power efficiency ˜2.26 lm/W, and external quantum efficiency ˜3.85% have been achieved. For the OLEDs fabricated on the flexible plastic substrates, both aluminum and calcium were used as cathode materials. The achieved maximum OLED luminance, emission efficiency, luminescence power efficiency, and external quantum efficiency were ˜13,000 cd/m2, ˜66.1 cd/A, ˜17.2 lm/W, and 16.7%, respectively. To make an active-matrix organic light-emitting display (AM-OLED), a two-TFT pixel electrode circuit was designed and fabricated based on amorphous silicon TFT

Silicon content design of CrSiN films for good anti-corrosion and anti-wear performances in NaOH solution

NASA Astrophysics Data System (ADS)

Wang, Haixin; Ye, Yuwei; Wang, Chunting; Zhang, Guangan; Liu, Wei

2018-06-01

The CrSiN films with different silicon contents were fabricated by medium frequency magnetron sputtering. The 304L stainless steel and Si (1 0 0) wafer were used for substrate specimens. Film plasticity, corrosion and tribological behaviors in 0.1 M NaOH solution were systematically investigated. Results show that the plasticity of CrN film could be improved by the addition of silicon. During the corrosion test, with the increase of silicon content, the corrosion current density exhibited a descending trend and impedance presented a rising trend. The COF and wear rate of as-prepared CrSiN film initially decreased and then increased as the silicon content increased. The CrSiN film with 12.7 at.% Si exhibited the lowest COF of 0.04 and a wear rate of 6.746  ×  10‑8 mm3 Nm‑1 in 0.1 M NaOH solution.

Vertical waveguides integrated with silicon photodetectors: Towards high efficiency and low cross-talk image sensors

NASA Astrophysics Data System (ADS)

Tut, Turgut; Dan, Yaping; Duane, Peter; Yu, Young; Wober, Munib; Crozier, Kenneth B.

2012-01-01

We describe the experimental realization of vertical silicon nitride waveguides integrated with silicon photodetectors. The waveguides are embedded in a silicon dioxide layer. Scanning photocurrent microscopy is performed on a device containing a waveguide, and on a device containing the silicon dioxide layer, but without the waveguide. The results confirm the waveguide's ability to guide light onto the photodetector with high efficiency. We anticipate that the use of these structures in image sensors, with one waveguide per pixel, would greatly improve efficiency and significantly reduce inter-pixel crosstalk.

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE PAGES

Benoit, M.; Braccini, S.; Casse, G.; ...

2018-02-08

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benoit, M.; Braccini, S.; Casse, G.

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

Experimental evaluation of the resolution improvement provided by a silicon PET probe.

PubMed

Brzeziński, K; Oliver, J F; Gillam, J; Rafecas, M; Studen, A; Grkovski, M; Kagan, H; Smith, S; Llosá, G; Lacasta, C; Clinthorne, N H

2016-09-01

A high-resolution PET system, which incorporates a silicon detector probe into a conventional PET scanner, has been proposed to obtain increased image quality in a limited region of interest. Detailed simulation studies have previously shown that the additional probe information improves the spatial resolution of the reconstructed image and increases lesion detectability, with no cost to other image quality measures. The current study expands on the previous work by using a laboratory prototype of the silicon PET-probe system to examine the resolution improvement in an experimental setting. Two different versions of the probe prototype were assessed, both consisting of a back-to-back pair of 1-mm thick silicon pad detectors, one arranged in 32 × 16 arrays of 1.4 mm × 1.4 mm pixels and the other in 40 × 26 arrays of 1.0 mm × 1.0 mm pixels. Each detector was read out by a set of VATAGP7 ASICs and a custom-designed data acquisition board which allowed trigger and data interfacing with the PET scanner, itself consisting of BGO block detectors segmented into 8 × 6 arrays of 6 mm × 12 mm × 30 mm crystals. Limited-angle probe data was acquired from a group of Na-22 point-like sources in order to observe the maximum resolution achievable using the probe system. Data from a Derenzo-like resolution phantom was acquired, then scaled to obtain similar statistical quality as that of previous simulation studies. In this case, images were reconstructed using measurements of the PET ring alone and with the inclusion of the probe data. Images of the Na-22 source demonstrated a resolution of 1.5 mm FWHM in the probe data, the PET ring resolution being approximately 6 mm. Profiles taken through the image of the Derenzo-like phantom showed a clear increase in spatial resolution. Improvements in peak-to-valley ratios of 50% and 38%, in the 4.8 mm and 4.0 mm phantom features respectively, were observed, while previously unresolvable 3.2 mm features were brought to light by the

Atomic and electronic structure of the silicon and silicon-metal Si{sub 20}, Si{sub 20}{sup -}, NaSi{sub 20}, KSi{sub 20} nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borshch, N. A., E-mail: ssd18@phys.vsu.ru; Pereslavtseva, N. S.; Kurganskii, S. I.

The results of atomic-structure optimization and calculation of the electronic structure of the Si{sub 20}, Si{sub 20}{sup -}, NaSi{sub 20}, and KSi{sub 20} clusters are reported. The PM3 and AM1 semiempirical methods were used in the calculations. It is shown that the Na and K atoms stabilize the fullerene-like silicon structure. The effect of configuration of the clusters on their electronic structure is analyzed.

The Level 0 Pixel Trigger system for the ALICE experiment

NASA Astrophysics Data System (ADS)

Aglieri Rinella, G.; Kluge, A.; Krivda, M.; ALICE Silicon Pixel Detector project

2007-01-01

The ALICE Silicon Pixel Detector contains 1200 readout chips. Fast-OR signals indicate the presence of at least one hit in the 8192 pixel matrix of each chip. The 1200 bits are transmitted every 100 ns on 120 data readout optical links using the G-Link protocol. The Pixel Trigger System extracts and processes them to deliver an input signal to the Level 0 trigger processor targeting a latency of 800 ns. The system is compact, modular and based on FPGA devices. The architecture allows the user to define and implement various trigger algorithms. The system uses advanced 12-channel parallel optical fiber modules operating at 1310 nm as optical receivers and 12 deserializer chips closely packed in small area receiver boards. Alternative solutions with multi-channel G-Link deserializers implemented directly in programmable hardware devices were investigated. The design of the system and the progress of the ALICE Pixel Trigger project are described in this paper.

Studies on a 300 k pixel detector telescope

NASA Astrophysics Data System (ADS)

Middelkamp, Peter; Antinori, F.; Barberis, D.; Becks, K. H.; Beker, H.; Beusch, W.; Burger, P.; Campbell, M.; Cantatore, E.; Catanesi, M. G.; Chesi, E.; Darbo, G.; D'Auria, S.; Davia, C.; di Bari, D.; di Liberto, S.; Elia, D.; Gys, T.; Heijne, E. H. M.; Helstrup, H.; Jacholkowski, A.; Jæger, J. J.; Jakubek, J.; Jarron, P.; Klempt, W.; Krummenacher, F.; Knudson, K.; Kralik, I.; Kubasta, J.; Lasalle, J. C.; Leitner, R.; Lemeilleur, F.; Lenti, V.; Letheren, M.; Lopez, L.; Loukas, D.; Luptak, M.; Martinengo, P.; Meddeler, G.; Meddi, F.; Morando, M.; Munns, A.; Pellegrini, F.; Pengg, F.; Pospisil, S.; Quercigh, E.; Ridky, J.; Rossi, L.; Safarik, K.; Scharfetter, L.; Segato, G.; Simone, S.; Smith, K.; Snoeys, W.; Vrba, V.

1996-02-01

Four silicon pixel detector planes are combined to form a tracking telescope in the lead ion experiment WA97 at CERN with 290 304 sensitive elements each of 75 μm by 500 μm area. An electronic pulse processing circuit is associated with each individual sensing element and the response for ionizing particles is binary with an adjustable threshold. The noise rate for a threshold of 6000 e- has been measured to be less than 10-10. The inefficient area due to malfunctioning pixels is 2.8% of the 120 cm2. Detector overlaps within one plane have been used to determine the alignment of the components of the plane itself, without need for track reconstruction using external detectors. It is the first time that such a big surface covered with active pixels has been used in a physics experiment. Some aspects concerning inclined particle tracks and time walk have been measured separately in a beam test at the CERN SPS H6 beam.

The Phase-II ATLAS ITk pixel upgrade

NASA Astrophysics Data System (ADS)

Terzo, S.

2017-07-01

The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase-II shutdown (foreseen to take place around 2025) by an all-silicon detector called the ``ITk'' (Inner Tracker). The innermost portion of ITk will consist of a pixel detector with five layers in the barrel region and ring-shaped supports in the end-cap regions. It will be instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the HL-LHC environment, which will be severe in terms of occupancy and radiation levels. The new pixel system could include up to 14 m2 of silicon, depending on the final layout, which is expected to be decided in 2017. Several layout options are being investigated at the moment, including some with novel inclined support structures in the barrel end-cap overlap region and others with very long innermost barrel layers. Forward coverage could be as high as |eta| <4. Supporting structures will be based on low mass, highly stable and highly thermally conductive carbon-based materials cooled by evaporative carbon dioxide circulated in thin-walled titanium pipes embedded in the structures. Planar, 3D, and CMOS sensors are being investigated to identify the optimal technology, which may be different for the various layers. The RD53 Collaboration is developing the new readout chip. The pixel off-detector readout electronics will be implemented in the framework of the general ATLAS trigger and DAQ system. A readout speed of up to 5 Gb/s per data link will be needed in the innermost layers going down to 640 Mb/s for the outermost. Because of the very high radiation level inside the detector, the first part of the transmission has to be implemented electrically, with signals converted for optical transmission at larger radii. Extensive tests are being carried out to prove the feasibility of implementing serial powering, which has been chosen as the baseline for the ITk pixel system due to the reduced

Silicon Micromachined Microlens Array for THz Antennas

NASA Technical Reports Server (NTRS)

Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

2013-01-01

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

NASA Astrophysics Data System (ADS)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

Using the Medipix3 detector for direct electron imaging in the range 60 keV to 200 keV in electron microscopy

NASA Astrophysics Data System (ADS)

Mir, J. A.; Plackett, R.; Shipsey, I.; dos Santos, J. M. F.

2017-11-01

Hybrid pixel sensor technology such as the Medipix3 represents a unique tool for electron imaging. We have investigated its performance as a direct imaging detector using a Transmission Electron Microscope (TEM) which incorporated a Medipix3 detector with a 300 μm thick silicon layer compromising of 256×256 pixels at 55 μm pixel pitch. We present results taken with the Medipix3 in Single Pixel Mode (SPM) with electron beam energies in the range, 60-200 keV . Measurements of the Modulation Transfer Function (MTF) and the Detective Quantum Efficiency (DQE) were investigated. At a given beam energy, the MTF data was acquired by deploying the established knife edge technique. Similarly, the experimental data required to determine DQE was obtained by acquiring a stack of images of a focused beam and of free space (flatfield) to determine the Noise Power Spectrum (NPS).

Tracking performance of a single-crystal and a polycrystalline diamond pixel-detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menasce, D.; et al.

2013-06-01

We present a comparative characterization of the performance of a single-crystal and a polycrystalline diamond pixel-detector employing the standard CMS pixel readout chips. Measurements were carried out at the Fermilab Test Beam Facility, FTBF, using protons of momentum 120 GeV/c tracked by a high-resolution pixel telescope. Particular attention was directed to the study of the charge-collection, the charge-sharing among adjacent pixels and the achievable position resolution. The performance of the single-crystal detector was excellent and comparable to the best available silicon pixel-detectors. The measured average detection-efficiency was near unity, ε = 0.99860±0.00006, and the position-resolution for shared hits was aboutmore » 6 μm. On the other hand, the performance of the polycrystalline detector was hampered by its lower charge collection distance and the readout chip threshold. A new readout chip, capable of operating at much lower threshold (around 1 ke $-$), would be required to fully exploit the potential performance of the polycrystalline diamond pixel-detector.« less

WE-G-204-03: Photon-Counting Hexagonal Pixel Array CdTe Detector: Optimal Resampling to Square Pixels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shrestha, S; Vedantham, S; Karellas, A

Purpose: Detectors with hexagonal pixels require resampling to square pixels for distortion-free display of acquired images. In this work, the presampling modulation transfer function (MTF) of a hexagonal pixel array photon-counting CdTe detector for region-of-interest fluoroscopy was measured and the optimal square pixel size for resampling was determined. Methods: A 0.65mm thick CdTe Schottky sensor capable of concurrently acquiring up to 3 energy-windowed images was operated in a single energy-window mode to include ≥10 KeV photons. The detector had hexagonal pixels with apothem of 30 microns resulting in pixel spacing of 60 and 51.96 microns along the two orthogonal directions.more » Images of a tungsten edge test device acquired under IEC RQA5 conditions were double Hough transformed to identify the edge and numerically differentiated. The presampling MTF was determined from the finely sampled line spread function that accounted for the hexagonal sampling. The optimal square pixel size was determined in two ways; the square pixel size for which the aperture function evaluated at the Nyquist frequencies along the two orthogonal directions matched that from the hexagonal pixel aperture functions, and the square pixel size for which the mean absolute difference between the square and hexagonal aperture functions was minimized over all frequencies up to the Nyquist limit. Results: Evaluation of the aperture functions over the entire frequency range resulted in square pixel size of 53 microns with less than 2% difference from the hexagonal pixel. Evaluation of the aperture functions at Nyquist frequencies alone resulted in 54 microns square pixels. For the photon-counting CdTe detector and after resampling to 53 microns square pixels using quadratic interpolation, the presampling MTF at Nyquist frequency of 9.434 cycles/mm along the two directions were 0.501 and 0.507. Conclusion: Hexagonal pixel array photon-counting CdTe detector after resampling to square

The first bump-bonded pixel detectors on CVD diamond

NASA Astrophysics Data System (ADS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V. G.; Pan, L. S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G.; RD42 Collaboration

1999-11-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch.

High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy.

PubMed

Tate, Mark W; Purohit, Prafull; Chamberlain, Darol; Nguyen, Kayla X; Hovden, Robert; Chang, Celesta S; Deb, Pratiti; Turgut, Emrah; Heron, John T; Schlom, Darrell G; Ralph, Daniel C; Fuchs, Gregory D; Shanks, Katherine S; Philipp, Hugh T; Muller, David A; Gruner, Sol M

2016-02-01

We describe a hybrid pixel array detector (electron microscope pixel array detector, or EMPAD) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128×128 pixel detector consists of a 500 µm thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit. The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition system, and preliminary results from experiments with 80-200 keV electron beams.

Clinical evaluation of pixellated NaI:Tl and continuous LaBr 3:Ce, compact scintillation cameras for breast tumors imaging

NASA Astrophysics Data System (ADS)

Pani, R.; Pellegrini, R.; Betti, M.; De Vincentis, G.; Cinti, M. N.; Bennati, P.; Vittorini, F.; Casali, V.; Mattioli, M.; Orsolini Cencelli, V.; Navarria, F.; Bollini, D.; Moschini, G.; Iurlaro, G.; Montani, L.; de Notaristefani, F.

2007-02-01

The principal limiting factor in the clinical acceptance of scintimammography is certainly its low sensitivity for cancers sized <1 cm, mainly due to the lack of equipment specifically designed for breast imaging. The National Institute of Nuclear Physics (INFN) has been developing a new scintillation camera based on Lanthanum tri-Bromide Cerium-doped crystal (LaBr 3:Ce), that demonstrating superior imaging performances with respect to the dedicated scintillation γ-camera that was previously developed. The proposed detector consists of continuous LaBr 3:Ce scintillator crystal coupled to a Hamamatsu H8500 Flat Panel PMT. One centimeter thick crystal has been chosen to increase crystal detection efficiency. In this paper, we propose a comparison and evaluation between lanthanum γ-camera and a Multi PSPMT camera, NaI(Tl) discrete pixel based, previously developed under "IMI" Italian project for technological transfer of INFN. A phantom study has been developed to test both the cameras before introducing them in clinical trials. High resolution scans produced by LaBr 3:Ce camera showed higher tumor contrast with a detailed imaging of uptake area than pixellated NaI(Tl) dedicated camera. Furthermore, with the lanthanum camera, the Signal-to-Noise Ratio ( SNR) value was increased for a lesion as small as 5 mm, with a consequent strong improvement in detectability.

Digital radiology using active matrix readout: amplified pixel detector array for fluoroscopy.

PubMed

Matsuura, N; Zhao, W; Huang, Z; Rowlands, J A

1999-05-01

Active matrix array technology has made possible the concept of flat panel imaging systems for radiography. In the conventional approach a thin-film circuit built on glass contains the necessary switching components (thin-film transistors or TFTs) to readout an image formed in either a phosphor or photoconductor layer. Extension of this concept to real time imaging--fluoroscopy--has had problems due to the very low noise required. A new design strategy for fluoroscopic active matrix flat panel detectors has therefore been investigated theoretically. In this approach, the active matrix has integrated thin-film amplifiers and readout electronics at each pixel and is called the amplified pixel detector array (APDA). Each amplified pixel consists of three thin-film transistors: an amplifier, a readout, and a reset TFT. The performance of the APDA approach compared to the conventional active matrix was investigated for two semiconductors commonly used to construct active matrix arrays--hydrogenated amorphous silicon and polycrystalline silicon. The results showed that with amplification close to the pixel, the noise from the external charge preamplifiers becomes insignificant. The thermal and flicker noise of the readout and the amplifying TFTs at the pixel become the dominant sources of noise. The magnitude of these noise sources is strongly dependent on the TFT geometry and its fabrication process. Both of these could be optimized to make the APDA active matrix operate at lower noise levels than is possible with the conventional approach. However, the APDA cannot be made to operate ideally (i.e., have noise limited only by the amount of radiation used) at the lowest exposure rate required in medical fluoroscopy.

Fullerene C60 coated silicon nanowires as anode materials for lithium secondary batteries.

PubMed

Arie, Arenst Andreas; Lee, Joong Kee

2012-04-01

A Fullerene C60 film was introduced as a coating layer for silicon nanowires (Si NWs) by a plasma assisted thermal evaporation technique. The morphology and structural characteristics of the materials were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). SEM observations showed that the shape of the nanowire structure was maintained after the C60 coating and the XPS analysis confirmed the presence of the carbon coating layer. The electrochemical characteristics of C60 coated Si NWs as anode materials were examined by charge-discharge tests and electrochemical impedance measurements. With the C60 film coating, Si NW electrodes exhibited a higher initial coulombic efficiency of 77% and a higher specific capacity of 2020 mA h g(-1) after the 30th cycle at a current density of 100 microA cm(-2) with cut-off voltage between 0-1.5 V. These improved electrochemical characteristics are attributed to the presence of the C60 coating layer which suppresses side reaction with the electrolyte and maintains the structural integrity of the Si NW electrodes during cycle tests.

Limits in point to point resolution of MOS based pixels detector arrays

NASA Astrophysics Data System (ADS)

Fourches, N.; Desforge, D.; Kebbiri, M.; Kumar, V.; Serruys, Y.; Gutierrez, G.; Leprêtre, F.; Jomard, F.

2018-01-01

In high energy physics point-to-point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors, can reach a 5-μm limit, this limit being based on statistical measurements, with a pixel-pitch in the 10 μm range. This paper is devoted to the evaluation of the building blocks for use in pixel arrays enabling accurate tracking of charged particles. Basing us on simulations we will make here a quantitative evaluation of the physical and technological limits in pixel size. Attempts to design small pixels based on SOI technology will be briefly recalled here. A design based on CMOS compatible technologies that allow a reduction of the pixel size below the micrometer is introduced here. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization experiments.

Silicon Framework Allotropes for Li-ion and Na-ion Batteries: New Insight for a Reversible Capacity.

NASA Astrophysics Data System (ADS)

Marzouk, Asma; Soto, Fernando; Burgos, Juan; Balbuena, Perla; El-Mellouhi, Fadwa

Silicon has the capacity to host a large amount of Li which makes it an attractive anode material despite suffering from swelling problem leading to irreversible capacity loss. The possibility of an easy extraction of Na atoms from Si24Na4 inspired us to adopt the Si24 as an anode material for Lithium-ion and sodium-ion Batteries. Using DFT, we evaluate the specific capacity and the intercalation potential of Si24 allotrope. Enhanced capacities are sought by designing a new silicon allotrope. We demonstrated that these Si24 allotropes show a negligible volume expansion and conserve their periodic structures after the maximum insertion/disinsertion of the ions which is crucial to prevent the capacity loss during cycling. DFT and ab-initio molecular dynamics (AIMD) studies give insights on the most probable surface adsorption and reaction sites, lithiation and sodiation, as well as initial stages of SEI formation and ionic diffusion. Qatar National Research Fund (QNRF) (NPRP 7-162-2-077).

Thin hybrid pixel assembly with backside compensation layer on ROIC

NASA Astrophysics Data System (ADS)

Bates, R.; Buttar, C.; McMullen, T.; Cunningham, L.; Ashby, J.; Doherty, F.; Gray, C.; Pares, G.; Vignoud, L.; Kholti, B.; Vahanen, S.

2017-01-01

The entire ATLAS inner tracking system will be replaced for operation at the HL-LHC . This will include a significantly larger pixel detector of approximately 15 m2. For this project, it is critical to reduce the mass of the hybrid pixel modules and this requires thinning both the sensor and readout chips to about 150 micrometres each. The thinning of the silicon chips leads to low bump yield for SnAg bumps due to bad co-planarity of the two chips at the solder reflow stage creating dead zones within the pixel array. In the case of the ATLAS FEI4 pixel readout chip thinned to 100 micrometres, the chip is concave, with the front side in compression, with a bow of +100 micrometres at room temperature which varies to a bow of -175 micrometres at the SnAg solder reflow temperature, caused by the CTE mismatch between the materials in the CMOS stack and the silicon substrate. A new wafer level process to address the issue of low bump yield be controlling the chip bow has been developed. A back-side dielectric and metal stack of SiN and Al:Si has been deposited on the readout chip wafer to dynamically compensate the stress of the front side stack. In keeping with a 3D process the materials used are compatible with Through Silicon Via (TSV) technology with a TSV last approach which is under development for this chip. It is demonstrated that the amplitude of the correction can be manipulated by the deposition conditions and thickness of the SiN/Al:Si stack. The bow magnitude over the temperature range for the best sample to date is reduced by almost a factor of 4 and the sign of the bow (shape of the die) remains constant. Further development of the backside deposition conditions is on-going with the target of close to zero bow at the solder reflow temperature and a minimal bow magnitude throughout the temperature range. Assemblies produced from FEI4 readout wafers thinned to 100 micrometres with the backside compensation layer have been made for the first time and

New Fraction Time Annealing Method For Improving Organic Light Emitting Diode Current Stability of Hydorgenated Amorphous Silicon Thin-Film Transistor Based Active Matrix Organic Light Emitting Didode Backplane

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Sang-Geun; Jeon, Jae-Hong; Goh, Joon-chul; Huh, Jong-moo; Choi, Joonhoo; Chung, Kyuha; Han, Min-Koo

2007-03-01

We propose and fabricate a new hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) pixel employing a fraction time annealing (FTA), which can supply a negative gate bias during a fraction time of each frame rather than the entire whole frame, in order to improve the organic light emitting diode (OLED) current stability for an active matrix (AM) OLED. When an electrical bias for an initial reference current of 2 μA at 60 °C is applied to an FTA-driven pixel more than 100 h and the temperature is increased up to 60 °C rather than room temperature, the OLED current is reduced by 22% in the FTA-driven pixel, whereas it is reduced by 53% in a conventional pixel. The current stability of the proposed pixel is improved, because the applied negative bias can suppress the threshold voltage degradation of the a-Si:H TFT itself, which may be attributed to hole trapping into SiNx. The proposed fraction time annealing method can successfully suppress Vth shift of the a-Si:H TFT itself due to hole trapping into SiNx induced by negative gate bias annealing.

Junction-side illuminated silicon detector arrays

DOEpatents

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

Theoretical and experimental comparison of proton and helium-beam radiography using silicon pixel detectors

NASA Astrophysics Data System (ADS)

Gehrke, T.; Amato, C.; Berke, S.; Martišíková, M.

2018-02-01

Ion-beam radiography (iRAD) could potentially improve the quality control of ion-beam therapy. The main advantage of iRAD is the possibility to directly measure the integrated stopping power. Until now there is no clinical implementation of iRAD. Topics of ongoing research include developing dedicated detection systems to achieve the desired spatial resolution (SR) and investigating different ion types as imaging radiation. This work focuses on the theoretical and experimental comparison of proton (pRAD) and helium-beam radiography (αRAD). The experimental comparison was performed with an in-house developed detection system consisting of silicon pixel detectors. This system enables the measurement of energy deposition of single ions, their tracking, and the identification of the ion type, which is important for αRAD due to secondary fragments. A 161 mm-thick PMMA phantom with an air gap of 1 mm placed at different depths was imaged with a 168 MeV u-1 proton/helium-ion beam at the Heidelberg ion-beam therapy center. The image quality in terms of SR and contrast-to-noise ratio (CNR) was evaluated. After validating MC simulations against experiments, pRAD and αRAD were compared to carbon-beam radiography (cRAD) in simulations. The theoretical prediction that the CNR of pRAD and αRAD is equal at similar imaging doses was experimentally confirmed. The measured SR of αRAD was 55% better compared to pRAD. The simulated cRads showed the expected improvement in SR and the decreased CNR at the same dose compared to the αRads, however only at dose levels exceeding typical doses of diagnostic x-ray projections. For clinically applicable dose levels, the cRads suffered from an insufficient number of carbon ions per pixel (220 μm  ×  220 μm). In conclusion, it was theoretically and experimentally shown that αRAD provides a better SR than pRAD without any disadvantages concerning the CNR. Using carbon ions instead of helium ions leads to a better SR at the

DEPFET pixel detector for future e-e+ experiments

NASA Astrophysics Data System (ADS)

Boronat, M.; DEPFET Collaboration

2016-04-01

The DEPFET Collaboration develops highly granular, ultra-thin pixel detectors for outstanding vertex reconstruction at future e+e- collider experiments. A DEPFET sensor provides, simultaneously, position sensitive detector capabilities and in-pixel amplification by the integration of a field effect transistor on a fully depleted silicon bulk. The characterization of the latest DEPFET prototypes has proven that a comfortable signal to noise ratio and excellent single point resolution can be achieved for a sensor thickness of 50 μm. A complete detector concept is being developed for the Belle II experiment at the new Japanese super flavor factory. The close to Belle related final auxiliary ASICs have been produced and found to operate a DEPFET pixel detector of the latest generation with the Belle II required read-out speed. DEPFET is not only the technology of choice for the Belle II vertex detector, but also a solid candidate for the International Linear Collider (ILC). Therefore, in this paper, the status of DEPFET R&D project is reviewed in the light of the requirements of the vertex detector at a future e+e- collider.

Integrated Arrays on Silicon at Terahertz Frequencies

NASA Technical Reports Server (NTRS)

Chattopadhayay, Goutam; Lee, Choonsup; Jung, Cecil; Lin, Robert; Peralta, Alessandro; Mehdi, Imran; Llombert, Nuria; Thomas, Bertrand

2011-01-01

In this paper we explore various receiver font-end and antenna architecture for use in integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies and use of novel integrated antennas with silicon micromachining are reported. We report novel stacking of micromachined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages which easily leads to the development of 2- dimensioanl multi-pixel receiver front-ends in the terahertz frequency range. We also report an integrated micro-lens antenna that goes with the silicon micro-machined front-end. The micro-lens antenna is fed by a waveguide that excites a silicon lens antenna through a leaky-wave or electromagnetic band gap (EBG) resonant cavity. We utilized advanced semiconductor nanofabrication techniques to design, fabricate, and demonstrate a super-compact, low-mass submillimeter-wave heterodyne frontend. When the micro-lens antenna is integrated with the receiver front-end we will be able to assemble integrated heterodyne array receivers for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.

A Silicon SPECT System for Molecular Imaging of the Mouse Brain.

PubMed

Shokouhi, Sepideh; Fritz, Mark A; McDonald, Benjamin S; Durko, Heather L; Furenlid, Lars R; Wilson, Donald W; Peterson, Todd E

2007-01-01

We previously demonstrated the feasibility of using silicon double-sided strip detectors (DSSDs) for SPECT imaging of the activity distribution of iodine-125 using a 300-micrometer thick detector. Based on this experience, we now have developed fully customized silicon DSSDs and associated readout electronics with the intent of developing a multi-pinhole SPECT system. Each DSSD has a 60.4 mm × 60.4 mm active area and is 1 mm thick. The strip pitch is 59 micrometers, and the readout of the 1024 strips on each side gives rise to a detector with over one million pixels. Combining four high-resolution DSSDs into a SPECT system offers an unprecedented space-bandwidth product for the imaging of single-photon emitters. The system consists of two camera heads with two silicon detectors stacked one behind the other in each head. The collimator has a focused pinhole system with cylindrical-shaped pinholes that are laser-drilled in a 250 μm tungsten plate. The unique ability to collect projection data at two magnifications simultaneously allows for multiplexed data at high resolution to be combined with lower magnification data with little or no multiplexing. With the current multi-pinhole collimator design, our SPECT system will be capable of offering high spatial resolution, sensitivity and angular sampling for small field-of-view applications, such as molecular imaging of the mouse brain.

Biocompatible silicon quantum dots by ultrasound-induced solution route

NASA Astrophysics Data System (ADS)

Lee, Soojin; Cho, Woon-Jo

2004-10-01

The water-soluble silicon quantum dots (QDs) of average diameter ~3 nm were prepared in organic solvent by ultrasound-induced solution route. This speedy rout produces the silicon QDs in the size range from 2 nm to 4 nm at room temperature and ambient pressure. The product yield of QDs was estimated to be higher than 60 % based on the initial NaSi weight. The surfaces of QDs were terminated with organic molecules including biocompatible ending groups (hydroxyl, amine and carboxyl) during simple preparation. Covalent attached molecules were characterized by FT-IR spectroscopy. These water-soluble passivation of QDs has just a little effect on the optical properties of original QDs.

Silicon halide-alkali metal flames as a source of solar grade silicon

NASA Technical Reports Server (NTRS)

Olsen, D. B.; Miller, W. J.

1979-01-01

The feasibility of using alkali metal-silicon halide diffusion flames to produce solar-grade silicon in large quantities and at low cost is demonstrated. Prior work shows that these flames are stable and that relatively high purity silicon can be produced using Na + SiCl4 flames. Silicon of similar purity is obtained from Na + SiF4 flames although yields are lower and product separation and collection are less thermochemically favored. Continuous separation of silicon from the byproduct alkali salt was demonstrated in a heated graphite reactor. The process was scaled up to reduce heat losses and to produce larger samples of silicon. Reagent delivery systems, scaled by a factor of 25, were built and operated at a production rate of 0.5 kg Si/h. Very rapid reactor heating rates are observed with wall temperatures reaching greater than 2000 K. Heat release parameters were measured using a cooled stainless steel reactor tube. A new reactor was designed.

Advances in Multi-Pixel Photon Counter technology: First characterization results

NASA Astrophysics Data System (ADS)

Bonanno, G.; Marano, D.; Romeo, G.; Garozzo, S.; Grillo, A.; Timpanaro, M. C.; Catalano, O.; Giarrusso, S.; Impiombato, D.; La Rosa, G.; Sottile, G.

2016-01-01

Due to the recent advances in silicon photomultiplier technology, new types of Silicon Photomultiplier (SiPM), also named Multi-Pixel Photon Counter (MPPC) detectors have become recently available, demonstrating superior performance in terms of their most important electrical and optical parameters. This paper presents the latest characterization results of the novel Low Cross-Talk (LCT) MPPC families from Hamamatsu, where a noticeable fill-factor enhancement and cross-talk reduction is achieved. In addition, the newly adopted resin coating has been proven to yield improved photon detection capabilities in the 280-320 nm spectral range, making the new LCT MPPCs particularly suitable for emerging applications like Cherenkov Telescope Array, and Astroparticle Physics.

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

DOEpatents

Holland, Stephen Edward

2000-02-15

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

Belle II silicon vertex detector

NASA Astrophysics Data System (ADS)

Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, Ti.; Baroncelli, To.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Enami, K.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C. W.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Maki, M.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rashevskaya, I.; Rao, K. K.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Suzuki, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.; Belle II SVD Collaboration

2016-09-01

The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

NASA Astrophysics Data System (ADS)

Hiti, B.; Cindro, V.; Gorišek, A.; Hemperek, T.; Kishishita, T.; Kramberger, G.; Krüger, H.; Mandić, I.; Mikuž, M.; Wermes, N.; Zavrtanik, M.

2017-10-01

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1× 1016 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5× 1014 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The results were backed by a numerical simulation of charge collection in an equivalent detector layout.

Study of prototypes of LFoundry active CMOS pixels sensors for the ATLAS detector

NASA Astrophysics Data System (ADS)

Vigani, L.; Bortoletto, D.; Ambroz, L.; Plackett, R.; Hemperek, T.; Rymaszewski, P.; Wang, T.; Krueger, H.; Hirono, T.; Caicedo Sierra, I.; Wermes, N.; Barbero, M.; Bhat, S.; Breugnon, P.; Chen, Z.; Godiot, S.; Pangaud, P.; Rozanov, A.

2018-02-01

Current high energy particle physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip configurations, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in depleted CMOS silicon detectors, which could achieve a similar performance at lower cost of production. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, are shown.

Monolithic active pixel radiation detector with shielding techniques

DOEpatents

Deptuch, Grzegorz W.

2018-03-20

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

Monolithic active pixel radiation detector with shielding techniques

DOEpatents

Deptuch, Grzegorz W.

2016-09-06

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

NASA Astrophysics Data System (ADS)

Riegel, C.; Backhaus, M.; Van Hoorne, J. W.; Kugathasan, T.; Musa, L.; Pernegger, H.; Riedler, P.; Schaefer, D.; Snoeys, W.; Wagner, W.

2017-01-01

A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 1015 n/cm2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

PubMed

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

[A micro-silicon multi-slit spectrophotometer based on MEMS technology].

PubMed

Hao, Peng; Wu, Yi-Hui; Zhang, Ping; Liu, Yong-Shun; Zhang, Ke; Li, Hai-Wen

2009-06-01

A new mini-spectrophotometer was developed by adopting micro-silicon slit and pixel segmentation technology, and this spectrophotometer used photoelectron diode array as the detector by the back-dividing-light way. At first, the effect of the spectral bandwidth on the tested absorbance linear correlation was analyzed. A theory for the design of spectrophotometer's slit was brought forward after discussing the relationships between spectrophotometer spectrum band width and pre-and post-slits width. Then, the integrative micro-silicon-slit, which features small volume, high precision, and thin thickness, was manufactured based on the MEMS technology. Finally, a test was carried on linear absorbance solution by this spectrophotometer. The final result showed that the correlation coefficients were larger than 0.999, which means that the new mini-spectrophotometer with micro-silicon slit pixel segmentation has an obvious linear correlation.

Silicon Alignment Pins: An Easy Way to Realize a Wafer-to-Wafer Alignment

NASA Technical Reports Server (NTRS)

Jung-Kubiak, Cecile; Reck, Theodore J.; Lin, Robert H.; Peralta, Alejandro; Gill, John J.; Lee, Choonsup; Siles, Jose; Toda, Risaku; Chattopadhyay, Goutam; Cooper, Ken B.;

A Nipkow disk integrated with Fresnel lenses for terahertz single pixel imaging.

PubMed

Li, Chong; Grant, James; Wang, Jue; Cumming, David R S

2013-10-21

We present a novel Nipkow disk design for terahertz (THz) single pixel imaging applications. A 100 mm high resistivity (ρ≈3k-10k Ω·cm) silicon wafer was used for the disk on which a spiral array of twelve 16-level binary Fresnel lenses were fabricated using photolithography and a dry-etch process. The implementation of Fresnel lenses on the Nipkow disk increases the THz signal transmission compared to the conventional pinhole-based Nipkow disk by more than 12 times thus a THz source with lower power or a THz detector with lower detectivity can be used. Due to the focusing capability of the lenses, a pixel resolution better than 0.5 mm is in principle achievable. To demonstrate the concept, a single pixel imaging system operating at 2.52 THz is described.

Characterization and correction of charge-induced pixel shifts in DECam

DOE PAGES

Gruen, D.; Bernstein, G. M.; Jarvis, M.; ...

2015-05-28

Interaction of charges in CCDs with the already accumulated charge distribution causes both a flux dependence of the point-spread function (an increase of observed size with flux, also known as the brighter/fatter effect) and pixel-to-pixel correlations of the Poissonian noise in flat fields. We describe these effects in the Dark Energy Camera (DECam) with charge dependent shifts of effective pixel borders, i.e. the Antilogus et al. (2014) model, which we fit to measurements of flat-field Poissonian noise correlations. The latter fall off approximately as a power-law r -2.5 with pixel separation r, are isotropic except for an asymmetry in themore » direct neighbors along rows and columns, are stable in time, and are weakly dependent on wavelength. They show variations from chip to chip at the 20% level that correlate with the silicon resistivity. The charge shifts predicted by the model cause biased shape measurements, primarily due to their effect on bright stars, at levels exceeding weak lensing science requirements. We measure the flux dependence of star images and show that the effect can be mitigated by applying the reverse charge shifts at the pixel level during image processing. Differences in stellar size, however, remain significant due to residuals at larger distance from the centroid.« less

PixelLearn

NASA Technical Reports Server (NTRS)

Mazzoni, Dominic; Wagstaff, Kiri; Bornstein, Benjamin; Tang, Nghia; Roden, Joseph

2006-01-01

PixelLearn is an integrated user-interface computer program for classifying pixels in scientific images. Heretofore, training a machine-learning algorithm to classify pixels in images has been tedious and difficult. PixelLearn provides a graphical user interface that makes it faster and more intuitive, leading to more interactive exploration of image data sets. PixelLearn also provides image-enhancement controls to make it easier to see subtle details in images. PixelLearn opens images or sets of images in a variety of common scientific file formats and enables the user to interact with several supervised or unsupervised machine-learning pixel-classifying algorithms while the user continues to browse through the images. The machinelearning algorithms in PixelLearn use advanced clustering and classification methods that enable accuracy much higher than is achievable by most other software previously available for this purpose. PixelLearn is written in portable C++ and runs natively on computers running Linux, Windows, or Mac OS X.

High dynamic range pixel architecture for advanced diagnostic medical x-ray imaging applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Izadi, Mohammad Hadi; Karim, Karim S.

2006-05-15

The most widely used architecture in large-area amorphous silicon (a-Si) flat panel imagers is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the PPS has the advantage of being compact and amenable toward high-resolution imaging, small PPS output signals are swamped by external column charge amplifier and data line thermal noise, which reduce the minimum readable sensor input signal. In contrast to PPS circuits, on-pixel amplifiers in a-Si technology reduce readout noise to levels that can meet even the stringent requirements for low noise digital x-ray fluoroscopy (<1000 noise electrons). However, larger voltagesmore » at the pixel input cause the output of the amplified pixel to become nonlinear thus reducing the dynamic range. We reported a hybrid amplified pixel architecture based on a combination of PPS and amplified pixel designs that, in addition to low noise performance, also resulted in large-signal linearity and consequently higher dynamic range [K. S. Karim et al., Proc. SPIE 5368, 657 (2004)]. The additional benefit in large-signal linearity, however, came at the cost of an additional pixel transistor. We present an amplified pixel design that achieves the goals of low noise performance and large-signal linearity without the need for an additional pixel transistor. Theoretical calculations and simulation results for noise indicate the applicability of the amplified a-Si pixel architecture for high dynamic range, medical x-ray imaging applications that require switching between low exposure, real-time fluoroscopy and high-exposure radiography.« less

Design, optimization and evaluation of a "smart" pixel sensor array for low-dose digital radiography

NASA Astrophysics Data System (ADS)

Wang, Kai; Liu, Xinghui; Ou, Hai; Chen, Jun

2016-04-01

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) have been widely used to build flat-panel X-ray detectors for digital radiography (DR). As the demand for low-dose X-ray imaging grows, a detector with high signal-to-noise-ratio (SNR) pixel architecture emerges. "Smart" pixel is intended to use a dual-gate photosensitive TFT for sensing, storage, and switch. It differs from a conventional passive pixel sensor (PPS) and active pixel sensor (APS) in that all these three functions are combined into one device instead of three separate units in a pixel. Thus, it is expected to have high fill factor and high spatial resolution. In addition, it utilizes the amplification effect of the dual-gate photosensitive TFT to form a one-transistor APS that leads to a potentially high SNR. This paper addresses the design, optimization and evaluation of the smart pixel sensor and array for low-dose DR. We will design and optimize the smart pixel from the scintillator to TFT levels and validate it through optical and electrical simulation and experiments of a 4x4 sensor array.

A high efficiency readout architecture for a large matrix of pixels.

NASA Astrophysics Data System (ADS)

Gabrielli, A.; Giorgi, F.; Villa, M.

2010-07-01

In this work we present a fast readout architecture for silicon pixel matrix sensors that has been designed to sustain very high rates, above 1 MHz/mm2 for matrices greater than 80k pixels. This logic can be implemented within MAPS (Monolithic Active Pixel Sensors), a kind of high resolution sensor that integrates on the same bulk the sensor matrix and the CMOS logic for readout, but it can be exploited also with other technologies. The proposed architecture is based on three main concepts. First of all, the readout of the hits is performed by activating one column at a time; all the fired pixels on the active column are read, sparsified and reset in parallel in one clock cycle. This implies the use of global signals across the sensor matrix. The consequent reduction of metal interconnections improves the active area while maintaining a high granularity (down to a pixel pitch of 40 μm). Secondly, the activation for readout takes place only for those columns overlapping with a certain fired area, thus reducing the sweeping time of the whole matrix and reducing the pixel dead-time. Third, the sparsification (x-y address labeling of the hits) is performed with a lower granularity with respect to single pixels, by addressing vertical zones of 8 pixels each. The fine-grain Y resolution is achieved by appending the zone pattern to the zone address of a hit. We show then the benefits of this technique in presence of clusters. We describe this architecture from a schematic point of view, then presenting the efficiency results obtained by VHDL simulations.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, A.V.; Balooch, M.; Moalem, M.

1999-01-19

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, Alex V.; Balooch, Mehdi; Moalem, Mehran

1999-01-01

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Precision tracking with a single gaseous pixel detector

NASA Astrophysics Data System (ADS)

Tsigaridas, S.; van Bakel, N.; Bilevych, Y.; Gromov, V.; Hartjes, F.; Hessey, N. P.; de Jong, P.; Kluit, R.

2015-09-01

The importance of micro-pattern gaseous detectors has grown over the past few years after successful usage in a large number of applications in physics experiments and medicine. We develop gaseous pixel detectors using micromegas-based amplification structures on top of CMOS pixel readout chips. Using wafer post-processing we add a spark-protection layer and a grid to create an amplification region above the chip, allowing individual electrons released above the grid by the passage of ionising radiation to be recorded. The electron creation point is measured in 3D, using the pixel position for (x, y) and the drift time for z. The track can be reconstructed by fitting a straight line to these points. In this work we have used a pixel-readout-chip which is a small-scale prototype of Timepix3 chip (designed for both silicon and gaseous detection media). This prototype chip has several advantages over the existing Timepix chip, including a faster front-end (pre-amplifier and discriminator) and a faster TDC which reduce timewalk's contribution to the z position error. Although the chip is very small (sensitive area of 0.88 × 0.88mm2), we have built it into a detector with a short drift gap (1.3 mm), and measured its tracking performance in an electron beam at DESY. We present the results obtained, which lead to a significant improvement for the resolutions with respect to Timepix-based detectors.

Bio-Inspired Asynchronous Pixel Event Tricolor Vision Sensor.

PubMed

Lenero-Bardallo, Juan Antonio; Bryn, D H; Hafliger, Philipp

2014-06-01

This article investigates the potential of the first ever prototype of a vision sensor that combines tricolor stacked photo diodes with the bio-inspired asynchronous pixel event communication protocol known as Address Event Representation (AER). The stacked photo diodes are implemented in a 22 × 22 pixel array in a standard STM 90 nm CMOS process. Dynamic range is larger than 60 dB and pixels fill factor is 28%. The pixels employ either simple pulse frequency modulation (PFM) or a Time-to-First-Spike (TFS) mode. A heuristic linear combination of the chip's inherent pseudo colors serves to approximate RGB color representation. Furthermore, the sensor outputs can be processed to represent the radiation in the near infrared (NIR) band without employing external filters, and to color-encode direction of motion due to an asymmetry in the update rates of the different diode layers.

Imaging properties of pixellated scintillators with deep pixels

NASA Astrophysics Data System (ADS)

Barber, H. Bradford; Fastje, David; Lemieux, Daniel; Grim, Gary P.; Furenlid, Lars R.; Miller, Brian W.; Parkhurst, Philip; Nagarkar, Vivek V.

2014-09-01

We have investigated the light-transport properties of scintillator arrays with long, thin pixels (deep pixels) for use in high-energy gamma-ray imaging. We compared 10x10 pixel arrays of YSO:Ce, LYSO:Ce and BGO (1mm x 1mm x 20 mm pixels) made by Proteus, Inc. with similar 10x10 arrays of LSO:Ce and BGO (1mm x 1mm x 15mm pixels) loaned to us by Saint-Gobain. The imaging and spectroscopic behaviors of these scintillator arrays are strongly affected by the choice of a reflector used as an inter-pixel spacer (3M ESR in the case of the Proteus arrays and white, diffuse-reflector for the Saint-Gobain arrays). We have constructed a 3700-pixel LYSO:Ce Prototype NIF Gamma-Ray Imager for use in diagnosing target compression in inertial confinement fusion. This system was tested at the OMEGA Laser and exhibited significant optical, inter-pixel cross-talk that was traced to the use of a single-layer of ESR film as an inter-pixel spacer. We show how the optical cross-talk can be mapped, and discuss correction procedures. We demonstrate a 10x10 YSO:Ce array as part of an iQID (formerly BazookaSPECT) imager and discuss issues related to the internal activity of 176Lu in LSO:Ce and LYSO:Ce detectors.

Imaging properties of pixellated scintillators with deep pixels

PubMed Central

Barber, H. Bradford; Fastje, David; Lemieux, Daniel; Grim, Gary P.; Furenlid, Lars R.; Miller, Brian W.; Parkhurst, Philip; Nagarkar, Vivek V.

2015-01-01

We have investigated the light-transport properties of scintillator arrays with long, thin pixels (deep pixels) for use in high-energy gamma-ray imaging. We compared 10×10 pixel arrays of YSO:Ce, LYSO:Ce and BGO (1mm × 1mm × 20 mm pixels) made by Proteus, Inc. with similar 10×10 arrays of LSO:Ce and BGO (1mm × 1mm × 15mm pixels) loaned to us by Saint-Gobain. The imaging and spectroscopic behaviors of these scintillator arrays are strongly affected by the choice of a reflector used as an inter-pixel spacer (3M ESR in the case of the Proteus arrays and white, diffuse-reflector for the Saint-Gobain arrays). We have constructed a 3700-pixel LYSO:Ce Prototype NIF Gamma-Ray Imager for use in diagnosing target compression in inertial confinement fusion. This system was tested at the OMEGA Laser and exhibited significant optical, inter-pixel cross-talk that was traced to the use of a single-layer of ESR film as an inter-pixel spacer. We show how the optical cross-talk can be mapped, and discuss correction procedures. We demonstrate a 10×10 YSO:Ce array as part of an iQID (formerly BazookaSPECT) imager and discuss issues related to the internal activity of 176Lu in LSO:Ce and LYSO:Ce detectors. PMID:26236070

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

DOE PAGES

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; ...

2016-01-28

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses atmore » megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. Lastly, we detail the characteristics, operation, testing and application of the detector.« less

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

PubMed Central

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; Shanks, Katherine S.; Weiss, Joel T.; Gruner, Sol M.

2016-01-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed. PMID:26917125

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation.

PubMed

Philipp, Hugh T; Tate, Mark W; Purohit, Prafull; Shanks, Katherine S; Weiss, Joel T; Gruner, Sol M

2016-03-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8-12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10-100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed.

Novel duplex vapor electrochemical method for silicon solar cells

NASA Technical Reports Server (NTRS)

Kapur, V.; Sancier, K. M.; Sanjurjo, A.; Leach, S.; Westphal, S.; Bartlett, R.; Nanis, L.

1978-01-01

Progress in the development of low-cost solar arrays is reported. Topics covered include: (1) development of a simplified feed system for the Na used in the Na-SiF4 reactor; (2) production of high purity silicon through the reduction of sodium fluosilicate with sodium metal; (3) the leaching process for recovering silicon from the reaction products of the SiF4-Na reaction; and (4) silicon separation by the melting of the reaction product.

Modeling radiation damage to pixel sensors in the ATLAS detector

NASA Astrophysics Data System (ADS)

Ducourthial, A.

2018-03-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC) . As the closest detector component to the interaction point, these detectors will be subject to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC) [1], the innermost layers will receive a fluence in excess of 1015 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is essential in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects on the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside early studies with LHC Run 2 proton-proton collision data.

Novel silicon-carbon fullerene-like nanostructures: an Ab initio study on the stability of Si54C6 and Si60C6 clusters.

PubMed

Srinivasan, Aravind; Ray, Asok K

2006-01-01

Silicon fullerene like nanostructures with six carbon atoms on the surface of Si60 cages by substitution, as well as inside the cage at various symmetry orientations have been studied within the generalized gradient approximation to density functional theory. Full geometry optimizations have been performed without any symmetry constraints using the Gaussian 03 suite of programs and the LANL2DZ basis set. Thus, for the silicon atom, the Hay-Wadt pseudopotential with the associated basis set are used for the core electrons and the valence electrons, respectively. For the carbon atom, the Dunning/Huzinaga double zeta basis set is employed. Electronic and geometric properties of the nanostructures are presented and discussed in detail. It was found that optimized silicon-carbon fullerene like nanostructures have increased stability compared to bare Si60 cage and the stability depends on the orientation of carbon atoms, as well as on the nature of bonding between silicon and carbon atoms and also on the carbon-carbon bonding.

A pixel read-out architecture implementing a two-stage token ring, zero suppression and compression

NASA Astrophysics Data System (ADS)

Heuvelmans, S.; Boerrigter, M.

2011-01-01

Increasing luminosity in high energy physics experiments leads to new challenges in the design of data acquisition systems for pixel detectors. With the upgrade of the LHCb experiment, the data processing will be changed; hit data from every collision will be transported off the pixel chip, without any trigger selection. A read-out architecture is proposed which is able to obtain low hit data loss on limited silicon area by using the logic beneath the pixels as a data buffer. Zero suppression and redundancy reduction ensure that the data rate off chip is minimized. A C++ model has been created for simulation of functionality and data loss, and for system development. A VHDL implementation has been derived from this model.

Condition of Si crystal formation by vaporizing Na from NaSi

NASA Astrophysics Data System (ADS)

Morito, Haruhiko; Karahashi, Taiki; Yamane, Hisanori

2012-09-01

NaSi was heated at various Na vapor pressures (pNa 0.1-1.2 atm) and temperatures (973-1173 K) to investigate the condition of Si crystal formation from NaSi by Na evaporation. Silicon single crystals 1-3 mm in diameter were grown by evaporation of Na from Na-Si melt at 1173 K and pNa=0.74 atm.

PIXSIC: A Pixellated Beta-Microprobe for Kinetic Measurements of Radiotracers on Awake and Freely Moving Small Animals

NASA Astrophysics Data System (ADS)

Godart, J.; Weiss, P.; Chantepie, B.; Clemens, J. C.; Delpierre, P.; Dinkespiler, B.; Janvier, B.; Jevaud, M.; Karkar, S.; Lefebvre, F.; Mastrippolito, R.; Menouni, M.; Pain, F.; Pangaud, P.; Pinot, L.; Morel, C.; Laniece, P.

2010-06-01

We present a design study of PIXSIC, a new β+ radiosensitive microprobe implantable in rodent brain dedicated to in vivo and autonomous measurements of local time activity curves of beta radiotracers in a small (a few mm3) volume of brain tissue. This project follows the initial β microprobe previously developed at IMNC, which has been validated in several neurobiological experiments. This first prototype has been extensively used on anesthetized animals, but presents some critical limits for utilization on awake and freely moving animals. Consequently, we propose to develop a wireless setup that can be worn by an animal without constraints upon its movements. To that aim, we have chosen a Silicon-based detector, highly β sensitive, which allows for the development of a compact pixellated probe (typically 600 × 200 × 1000 μm3), read out with miniaturized wireless electronics. Using Monte-Carlo simulations, we show that high resistive Silicon pixels are appropriate for this purpose, assuming that the pixel dimensions are adapted to our specific signals. More precisely, a tradeoff has to be found between the sensitivity to β+ particles and to the 511 keV j background resulting from annihilations of β+ with electrons. We demonstrate that pixels with maximized surface and minimized thickness can lead to an optimization of their β+ sensitivity with a relative transparency to the annihilation background.

Alignment of the Pixel and SCT Modules for the 2004 ATLAS Combined Test Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

ATLAS Collaboration; Ahmad, A.; Andreazza, A.

2008-06-02

A small set of final prototypes of the ATLAS Inner Detector silicon tracking system(Pixel Detector and SemiConductor Tracker), were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated using the known momenta of the beam particles and were shown to yield consistent results among the different alignment approaches. From the residual distributions, it is concluded that the precision attained inmore » the alignmentof the silicon modules is of the order of 5 mm in their most precise coordinate.« less

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

2002-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, B.; Norton, T. J.; Haas, P.; Fisher, Richard R. (Technical Monitor)

2001-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

320 x 240 uncooled IRFPA with pixel wise thin film vacuum packaging

NASA Astrophysics Data System (ADS)

Yon, J.-J.; Dumont, G.; Rabaud, W.; Becker, S.; Carle, L.; Goudon, V.; Vialle, C.; Hamelin, A.; Arnaud, A.

2012-10-01

Silicon based vacuum packaging is a key enabling technology for achieving affordable uncooled Infrared Focal Plane Arrays (IRFPA) as required by the promising mass market for very low cost IR applications, such as automotive driving assistance, energy loss monitoring in buildings, motion sensors… Among the various approaches studied worldwide, the CEA, LETI is developing a unique technology where each bolometer pixel is sealed under vacuum at the wafer level, using an IR transparent thin film deposition. This technology referred to as PLP (Pixel Level Packaging), leads to an array of hermetic micro-caps each containing a single microbolometer. Since the successful demonstration that the PLP technology, when applied on a single microbolometer pixel, can provide the required vacuum < 10-3 mbar, the authors have pushed forward the development of the technology on fully operational QVGA readout circuits CMOS base wafers (320 x 240 pixels). In this outlook, the article reports on the electro optical performance obtained from this preliminary PLP based QVGA demonstrator. Apart from the response, noise and NETD distributions, the paper also puts emphasis on additional key features such as thermal time constant, image quality, and ageing properties.

Scientific CMOS Pixels

NASA Astrophysics Data System (ADS)

Janesick, James; Gunawan, Ferry; Dosluoglu, Taner; Tower, John; McCaffrey, Niel

2002-08-01

High performance CMOS pixels are introduced; and their development is discussed. 3T (3-transistor) photodiode, 5T pinned diode, 6T photogate and 6T photogate back illuminated CMOS pixels are examined in detail, and the latter three are considered as scientific pixels. The advantages and disadvantagesof these options for scientific CMOS pixels are examined.Pixel characterization, which is used to gain a better understanding of CMOS pixels themselves, is also discussed.

Scientific CMOS Pixels

NASA Astrophysics Data System (ADS)

Janesick, J.; Gunawan, F.; Dosluoglu, T.; Tower, J.; McCaffrey, N.

High performance CMOS pixels are introduced and their development is discussed. 3T (3-transistor) photodiode, 5T pinned diode, 6T photogate and 6T photogate back illuminated CMOS pixels are examined in detail, and the latter three are considered as scientific pixels. The advantages and disadvantages of these options for scientific CMOS pixels are examined. Pixel characterization, which is used to gain a better understanding of CMOS pixels themselves, is also discussed.

Integrated Lens Antennas for Multi-Pixel Receivers

NASA Technical Reports Server (NTRS)

Lee, Choonsup; Chattopadhyay, Goutam

2011-01-01

Future astrophysics and planetary experiments are expected to require large focal plane arrays with thousands of detectors. Feedhorns have excellent performance, but their mass, size, fabrication challenges, and expense become prohibitive for very large focal plane arrays. Most planar antenna designs produce broad beam patterns, and therefore require additional elements for efficient coupling to the telescope optics, such as substrate lenses or micromachined horns. An antenna array with integrated silicon microlenses that can be fabricated photolithographically effectively addresses these issues. This approach eliminates manual assembly of arrays of lenses and reduces assembly errors and tolerances. Moreover, an antenna array without metallic horns will reduce mass of any planetary instrument significantly. The design has a monolithic array of lens-coupled, leaky-wave antennas operating in the millimeter- and submillimeter-wave frequencies. Electromagnetic simulations show that the electromagnetic fields in such lens-coupled antennas are mostly confined in approximately 12 15 . This means that one needs to design a small-angle sector lens that is much easier to fabricate using standard lithographic techniques, instead of a full hyper-hemispherical lens. Moreover, this small-angle sector lens can be easily integrated with the antennas in an array for multi-pixel imager and receiver implementation. The leaky antenna is designed using double-slot irises and fed with TE10 waveguide mode. The lens implementation starts with a silicon substrate. Photoresist with appropriate thickness (optimized for the lens size) is spun on the substrate and then reflowed to get the desired lens structure. An antenna array integrated with individual lenses for higher directivity and excellent beam profile will go a long way in realizing multi-pixel arrays and imagers. This technology will enable a new generation of compact, low-mass, and highly efficient antenna arrays for use in multi-pixel

Femtosecond laser fabricating black silicon in alkaline solution

NASA Astrophysics Data System (ADS)

Meng, Jiao; Song, Haiying; Li, Xiaoli; Liu, Shibing

2015-03-01

An efficient approach for enhancing the surface antireflection is proposed, in which a black silicon is fabricated by a femtosecond laser in alkaline solution. In the experiment, 2 wt% NaOH solution is formulated at room temperature (22 ± 1 °C). Then, a polished silicon is scanned via femtosecond laser irradiation in 2 wt% NaOH solution. Jungle-like microstructures on the black silicon surface are characterized using an atomic force microscopy. The reflectance of the black silicon is measured at the wavelengths ranging from 400 to 750 nm. Compared to the polished silicon, the black silicon can significantly suppress the optical reflection throughout the visible region (<5 %). Meanwhile, we also investigated the factors of the black silicon, including the femtosecond laser pulse energy and the scanning speed. This method is simple and effective to acquire the black silicon, which probably has a large advantage in fast and cost-effective black silicon fabrication.

Tests of UFXC32k chip with CdTe pixel detector

NASA Astrophysics Data System (ADS)

Maj, P.; Taguchi, T.; Nakaye, Y.

2018-02-01

The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

3T renal (23)Na-MRI: effects of desmopressin in patients with central diabetes insipidus.

PubMed

Haneder, Stefan; Michaely, Henrik J; Konstandin, Simon; Schad, Lothar R; Morelli, John N; Krämer, Bernhard K; Schoenberg, Stefan O; Lammert, Alexander

2014-02-01

The purpose of this prospective study was to assess physiologic changes in the renal corticomedullary (23)Na-concentration ([(23)Na]) gradient with (23)Na-MRI at 3.0T in patients with central diabetes insipidus (CDI) before and after intranasal administration of 20 μg desmopressin (DDAVP). Four patients with CDI (all male, mean age 60.2 years) were included in this IRB-approved study. For (23)Na-imaging, a 3D density adapted, radial GRE-sequence (TE = 0.55 ms; TR = 120 ms; projections = 8,000; spatial resolution = 5 × 5 × 5 mm(3)) was used in combination with a dedicated (23)Na-coil and reference phantoms. The corticomedullary [(23)Na] gradient (in mmol/L/mm) was calculated pixel-by-pixel along a linear region-of-interest (ROI) spanning from the renal cortex in the direction of the medulla. Mean ± SDs of [(23)Na] were calculated for each patient as well as for the entire group. Mean [(23)Na] increased along the corticomedullary gradient from the cortex (pre-DDAVP 38.0 ± 6.3 mmol/L vs. post-DDAVP 30.7 ± 3.5 mmol/L) to the medulla (pre-DDAVP 71.6 ± 14.8 mmol/L vs. post-DDAVP 59.7 ± 10.8 mmol/L). The overall mean decrease of [(23)Na] after DDAVP administration was 17.1 ± 1.1 %. (23)Na-MRI with state-of-the-art techniques at 3T depicts the physiologic renal response to the administration of desmopressin in patients with central diabetes insipidus.

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel.

PubMed

Takahashi, Seiji; Huang, Yi-Min; Sze, Jhy-Jyi; Wu, Tung-Ting; Guo, Fu-Sheng; Hsu, Wei-Cheng; Tseng, Tung-Hsiung; Liao, King; Kuo, Chin-Chia; Chen, Tzu-Hsiang; Chiang, Wei-Chieh; Chuang, Chun-Hao; Chou, Keng-Yu; Chung, Chi-Hsien; Chou, Kuo-Yu; Tseng, Chien-Hsien; Wang, Chuan-Joung; Yaung, Dun-Nien

2017-12-05

A submicron pixel's light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e - /s at 60 °C, an ultra-low read noise of 0.90 e - ·rms, a high full well capacity (FWC) of 4100 e - , and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed.

60-nm-thick basic photonic components and Bragg gratings on the silicon-on-insulator platform.

PubMed

Zou, Zhi; Zhou, Linjie; Li, Xinwan; Chen, Jianping

2015-08-10

We demonstrate integrated basic photonic components and Bragg gratings using 60-nm-thick silicon-on-insulator strip waveguides. The ultra-thin waveguides exhibit a propagation loss of 0.61 dB/cm and a bending loss of approximately 0.015 dB/180° with a 30 μm bending radius (including two straight-bend waveguide junctions). Basic structures based on the ultra-thin waveguides, including micro-ring resonators, 1 × 2 MMI couplers, and Mach-Zehnder interferometers are realized. Upon thinning-down, the waveguide effective refractive index is reduced, making the fabrication of Bragg gratings possible using the standard 248-nm deep ultra-violet (DUV) photolithography process. The Bragg grating exhibits a stopband width of 1 nm and an extinction ratio of 35 dB, which is practically applicable as an optical filter or a delay line. The transmission spectrum can be thermally tuned via an integrated resistive micro-heater formed by a heavily doped silicon slab beside the waveguide.

Proof of principle of helium-beam radiography using silicon pixel detectors for energy deposition measurement, identification, and tracking of single ions.

PubMed

Gehrke, Tim; Gallas, Raya; Jäkel, Oliver; Martišíková, Maria

2018-02-01

Hadron therapy has the capability to provide a high dose conformation to tumor regions. However, it requires an accurate target positioning. Thus, the precise monitoring of the patient's anatomical positioning during treatment is desirable. For this purpose, hadron-beam radiography with protons (pRad) and ions (iRad) could be an attractive tool complementing the conventional imaging technologies. On the pathway to an envisaged clinical application, several challenges have to be addressed. Among them are achieving the desired spatial resolution in the presence of multiple Coulomb scattering (MCS), performing radiographs with a sufficient thickness resolution at clinically applicable dose levels, and the search for combinations of particularly suitable hadrons and detectors. These topics are investigated in this work for a detection system based on silicon pixel detectors. A method of iRad based on energy deposition measurements in thin layers is introduced. It exploits a detection system consisting of three parallel silicon pixel detectors, which also enables particle tracking and identification. Helium ions, which exhibit less pronounced MCS than protons, were chosen as imaging radiation. A PMMA phantom with a mean water-equivalent thickness (WET) of 192 mm, containing maximal WET-variations of ±6 mm, was imaged with a 173 MeV/u helium ion beam at the Heidelberg Ion-Beam Therapy Center. WET-differences in form of 2.3 mm × 2.3 mm steps were aimed to be visualized and resolved in images of the energy deposition measured behind the phantom. The detection system was placed downstream of the imaged object in order to detect single ions leaving it. The combination of the measured information on energy deposition, ion type, and the track behind the phantom was used for the image formation, employing a self-developed data-processing procedure. It was shown that helium-beam radiography is feasible with the reported detection system. The introduced data

The Na 0.60CoO 2 phase, a potential conductive additive for the positive electrode of Ni-MH cells

NASA Astrophysics Data System (ADS)

Tronel, Frédéric; Guerlou-Demourgues, Liliane; Basterreix, Maïté; Delmas, Claude

The Na 0.60CoO 2 phase, obtained by a classical solid-state reaction, is tested as a conductive additive in the nickel oxide electrode. Though the process was not optimised in terms of additive repartition, the experiments show a good efficiency of the Na 0.60CoO 2 phase even at low cobalt content, compared to usual additives like CoO. Moreover, it increases the stability of the electrode at low potential. The added Na 0.60CoO 2 phase is shown to transform, during the first cycles, into a γ-type cobalt oxyhydroxide phase that is more stable at low potential than the usual additives.

Specific spice modeling of microcrystalline silicon TFTs

NASA Astrophysics Data System (ADS)

Moustapha, O.; Bui, V. D.; Bonnassieux, Y.; Parey, J. Y.

2008-03-01

In this paper we present a specific spice static and dynamic model of microcrystalline silicon (μc-Si) thin film transistors (TFTs) taking into account the access resistances and the capacitors contributions. The previously existing models of amorphous silicon and polysilicon TFTs were not completely suited, so we combined them to build a new specific model of μc-Si TFTs. The reliability of the model is then checked by the comparison of experimental measurements to simulations and by simulating the characteristics of some electronic devices (OLED pixels, inverters, and so on).

Design and Simulations of an Energy Harvesting Capable CMOS Pixel for Implantable Retinal Prosthesis

NASA Astrophysics Data System (ADS)

Ansaripour, Iman; Karami, Mohammad Azim

2017-12-01

A new pixel is designed with the capability of imaging and energy harvesting for the retinal prosthesis implant in 0.18 µm standard Complementary Metal Oxide Semiconductor technology. The pixel conversion gain and dynamic range, are 2.05 \\upmu{{V}}/{{e}}^{ - } and 63.2 dB. The power consumption 53.12 pW per pixel while energy harvesting performance is 3.87 nW in 60 klx of illuminance per pixel. These results have been obtained using post layout simulation. In the proposed pixel structure, the high power production capability in energy harvesting mode covers the demanded energy by using all available p-n junction photo generated currents.

Characterization of a 512x512-pixel 8-output full-frame CCD for high-speed imaging

NASA Astrophysics Data System (ADS)

Graeve, Thorsten; Dereniak, Eustace L.

1993-01-01

The characterization of a 512 by 512 pixel, eight-output full frame CCD manufactured by English Electric Valve under part number CCD13 is discussed. This device is a high- resolution Silicon-based array designed for visible imaging applications at readout periods as low as two milliseconds. The characterization of the device includes mean-variance analysis to determine read noise and dynamic range, as well as charge transfer efficiency, MTF, and quantum efficiency measurements. Dark current and non-uniformity issues on a pixel-to-pixel basis and between individual outputs are also examined. The characterization of the device is restricted by hardware limitations to a one MHz pixel rate, corresponding to a 40 ms readout time. However, subsections of the device have been operated at up to an equivalent 100 frames per second. To maximize the frame rate, the CCD is illuminated by a synchronized strobe flash in between frame readouts. The effects of the strobe illumination on the imagery obtained from the device is discussed.

Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

NASA Astrophysics Data System (ADS)

Savic, N.; Beyer, J.; La Rosa, A.; Macchiolo, A.; Nisius, R.

2016-12-01

In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023-2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more radiation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 μm recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of these modules is investigated at beam tests and the results on edge efficiency will be shown.

Enhancing spatial resolution of (18)F positron imaging with the Timepix detector by classification of primary fired pixels using support vector machine.

PubMed

Wang, Qian; Liu, Zhen; Ziegler, Sibylle I; Shi, Kuangyu

2015-07-07

Position-sensitive positron cameras using silicon pixel detectors have been applied for some preclinical and intraoperative clinical applications. However, the spatial resolution of a positron camera is limited by positron multiple scattering in the detector. An incident positron may fire a number of successive pixels on the imaging plane. It is still impossible to capture the primary fired pixel along a particle trajectory by hardware or to perceive the pixel firing sequence by direct observation. Here, we propose a novel data-driven method to improve the spatial resolution by classifying the primary pixels within the detector using support vector machine. A classification model is constructed by learning the features of positron trajectories based on Monte-Carlo simulations using Geant4. Topological and energy features of pixels fired by (18)F positrons were considered for the training and classification. After applying the classification model on measurements, the primary fired pixels of the positron tracks in the silicon detector were estimated. The method was tested and assessed for [(18)F]FDG imaging of an absorbing edge protocol and a leaf sample. The proposed method improved the spatial resolution from 154.6   ±   4.2 µm (energy weighted centroid approximation) to 132.3   ±   3.5 µm in the absorbing edge measurements. For the positron imaging of a leaf sample, the proposed method achieved lower root mean square error relative to phosphor plate imaging, and higher similarity with the reference optical image. The improvements of the preliminary results support further investigation of the proposed algorithm for the enhancement of positron imaging in clinical and preclinical applications.

Enhancing spatial resolution of 18F positron imaging with the Timepix detector by classification of primary fired pixels using support vector machine

NASA Astrophysics Data System (ADS)

Wang, Qian; Liu, Zhen; Ziegler, Sibylle I.; Shi, Kuangyu

2015-07-01

Position-sensitive positron cameras using silicon pixel detectors have been applied for some preclinical and intraoperative clinical applications. However, the spatial resolution of a positron camera is limited by positron multiple scattering in the detector. An incident positron may fire a number of successive pixels on the imaging plane. It is still impossible to capture the primary fired pixel along a particle trajectory by hardware or to perceive the pixel firing sequence by direct observation. Here, we propose a novel data-driven method to improve the spatial resolution by classifying the primary pixels within the detector using support vector machine. A classification model is constructed by learning the features of positron trajectories based on Monte-Carlo simulations using Geant4. Topological and energy features of pixels fired by 18F positrons were considered for the training and classification. After applying the classification model on measurements, the primary fired pixels of the positron tracks in the silicon detector were estimated. The method was tested and assessed for [18F]FDG imaging of an absorbing edge protocol and a leaf sample. The proposed method improved the spatial resolution from 154.6   ±   4.2 µm (energy weighted centroid approximation) to 132.3   ±   3.5 µm in the absorbing edge measurements. For the positron imaging of a leaf sample, the proposed method achieved lower root mean square error relative to phosphor plate imaging, and higher similarity with the reference optical image. The improvements of the preliminary results support further investigation of the proposed algorithm for the enhancement of positron imaging in clinical and preclinical applications.

Silicon Drift Detectors - A Novel Technology for Vertex Detectors

NASA Astrophysics Data System (ADS)

Lynn, D.

1996-10-01

Silicon Drift Detectors (SDD) are novel position sensing silicon detectors which operate in a manner analogous to gas drift detectors. Single SDD's were shown in the CERN NA45 experiment to permit excellent spatial resolution (< 10 μm), to handle large particle occupancy, and to require a small fraction of the number of electronic channels of an equivalent pixel detector. The Silicon Vertex Tracker (SVT) for the STAR experiment at RHIC is based on this new technology. The SVT will consist of 216 SDD's, each 6.3 cm by 6.3 cm, arranged in a three layer barrel design, covering 2 π in azimuth and ±1 in pseudo-rapidity. Over the last three years we undertook a concentrated R+D effort to optimize the performance of the detector by minimizing the inactive area, the operating voltage and the data volume. We will present test results from several wafer prototypes. The charge produced by the passage of ionizing particles through the bulk of the detectors is collected on segmented anodes, with a pitch of 250 μm, on the far edges of the detector. The anodes are wire-bonded to a thick film multi-chip module which contains preamplifier/shaper chips and CMOS based switched capacitor arrays used as an analog memory pipeline. The ADC is located off-detector. The complete readout chain from the wafer to the DAQ will be presented. Finally we will show physics performance simulations based on the resolution achieved by the SVT prototypes.

Origami silicon optoelectronics for hemispherical electronic eye systems.

PubMed

Zhang, Kan; Jung, Yei Hwan; Mikael, Solomon; Seo, Jung-Hun; Kim, Munho; Mi, Hongyi; Zhou, Han; Xia, Zhenyang; Zhou, Weidong; Gong, Shaoqin; Ma, Zhenqiang

2017-11-24

Digital image sensors in hemispherical geometries offer unique imaging advantages over their planar counterparts, such as wide field of view and low aberrations. Deforming miniature semiconductor-based sensors with high-spatial resolution into such format is challenging. Here we report a simple origami approach for fabricating single-crystalline silicon-based focal plane arrays and artificial compound eyes that have hemisphere-like structures. Convex isogonal polyhedral concepts allow certain combinations of polygons to fold into spherical formats. Using each polygon block as a sensor pixel, the silicon-based devices are shaped into maps of truncated icosahedron and fabricated on flexible sheets and further folded either into a concave or convex hemisphere. These two electronic eye prototypes represent simple and low-cost methods as well as flexible optimization parameters in terms of pixel density and design. Results demonstrated in this work combined with miniature size and simplicity of the design establish practical technology for integration with conventional electronic devices.

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

NASA Technical Reports Server (NTRS)

Reck, Theodore (Inventor); Perez, Jose Vicente Siles (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Jung-Kubiak, Cecile (Inventor); Mehdi, Imran (Inventor); Chattopadhyay, Goutam (Inventor); Lin, Robert H. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

NASA Astrophysics Data System (ADS)

Wang, Kai; Ou, Hai; Chen, Jun

2015-06-01

Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The "smart" pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients.

New PMOS LTPS TFT pixel for AMOLED to suppress the hysteresis effect on OLED current by employing a reset voltage driving

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Sang-Geun; Han, Sang-Myeon; Han, Min-Koo; Park, Kee-Chan

2008-03-01

New PMOS LTPS (low temperature polycrystalline silicon)-thin film transistor (TFT) pixel circuit, which can suppress an OLED current error caused by the hysteresis of LTPS-TFT for active matrix organic light emitting diode (AMOLED) display, is proposed and fabricated. The proposed pixel circuit employs a reset voltage driving so that the sweep direction of gate voltage in the current driving TFT is not altered by the gate voltage in the previous frame. Our experimental results show that OLED current error of the proposed pixel is successfully suppressed because a reset voltage can enable the starting gate voltage for a desired one not to be varied, while that of the conventional 2-TFT pixel exceeds over 15% due to the hysteresis of LTPS-TFT.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

Ammoniated alkali fullerides (ND(3))(x)NaA(2)C(60): ammonia specific effects and superconductivity.

PubMed

Margadonna, Serena; Aslanis, Efstathios; Prassides, Kosmas

2002-08-28

The crystal structure of the superconducting (ND(3))(x)()NaA(2)C(60) (0.7 < or = x < or = 1, A= K, Rb) fullerides (T(c)= 6-15 K) has been studied by synchrotron X-ray and neutron powder diffraction. It is face-centered cubic (fcc) to low temperatures with Na(+)-ND(3) pairs residing in the octahedral interstices. These are disordered over the corners of two "interpenetrating" cubes with the Na(+) ions and the N atoms displaced by approximately 2.0 A and approximately 0.5 A from the center of the site and statically disordered over the corners of the inner and outer cube, respectively. Close contacts between the D atoms of the ND(3) molecules and electron rich 6:6 C-C bonds of neighboring C(60) units provide the signature of weak N-D.pi hydrogen-bonding interactions, which control the intermolecular packing in the crystal and may determine the unusual superconducting properties.

Capacitance-Based Dosimetry of Co-60 Radiation using Fully-Depleted Silicon-on-Insulator Devices

PubMed Central

Li, Yulong; Porter, Warren M.; Ma, Rui; Reynolds, Margaret A.; Gerbi, Bruce J.; Koester, Steven J.

2015-01-01

The capacitance based sensing of fully-depleted silicon-on-insulator (FDSOI) variable capacitors for Co-60 gamma radiation is investigated. Linear response of the capacitance is observed for radiation dose up to 64 Gy, while the percent capacitance change per unit dose is as high as 0.24 %/Gy. An analytical model is developed to study the operational principles of the varactors and the maximum sensitivity as a function of frequency is determined. The results show that FDSOI varactor dosimeters have potential for extremely-high sensitivity as well as the potential for high frequency operation in applications such as wireless radiation sensing. PMID:27840451

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

PubMed

Zhao, C; Vassiljev, N; Konstantinidis, A C; Speller, R D; Kanicki, J

2017-03-07

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm -1 ) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

NASA Astrophysics Data System (ADS)

Zhao, C.; Vassiljev, N.; Konstantinidis, A. C.; Speller, R. D.; Kanicki, J.

2017-03-01

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm-1) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Evaluation of the breakdown behaviour of ATLAS silicon pixel sensors after partial guard-ring removal

NASA Astrophysics Data System (ADS)

Goessling, C.; Klingenberg, R.; Muenstermann, D.; Wittig, T.

2010-12-01

To avoid geometrical inefficiencies in the ATLAS pixel detector, the concept of shingling is used up to now in the barrel section. For the upgrades of ATLAS, it is desired to avoid this as it increases the volume and material budget of the pixel layers and complicates the cooling. A direct planar edge-to-edge arrangement of pixel modules has not been possible in the past due to about 1100 μm of inactive edge composed of approximately 600 μm of guard rings and 500 μm of safety margin. In this work, the safety margin and guard rings of ATLAS SingleChip sensors were cut at different positions using a standard diamond dicing saw and irradiated afterwards to explore the breakdown behaviour and the leakage current development. It is found that the inactive edge can be reduced to about 400 μm of guard rings with almost no reduction in pre-irradiation testability and leakage current performance. This is in particular important for the insertable b-layer upgrade of ATLAS (IBL) where inactive edges of less than 450 μm width are required.

Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

2016-03-01

Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

TU-FG-209-03: Exploring the Maximum Count Rate Capabilities of Photon Counting Arrays Based On Polycrystalline Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, A K; Koniczek, M; Antonuk, L E

Purpose: Photon counting arrays (PCAs) offer several advantages over conventional, fluence-integrating x-ray imagers, such as improved contrast by means of energy windowing. For that reason, we are exploring the feasibility and performance of PCA pixel circuitry based on polycrystalline silicon. This material, unlike the crystalline silicon commonly used in photon counting detectors, lends itself toward the economic manufacture of radiation tolerant, monolithic large area (e.g., ∼43×43 cm2) devices. In this presentation, exploration of maximum count rate, a critical performance parameter for such devices, is reported. Methods: Count rate performance for a variety of pixel circuit designs was explored through detailedmore » circuit simulations over a wide range of parameters (including pixel pitch and operating conditions) with the additional goal of preserving good energy resolution. The count rate simulations assume input events corresponding to a 72 kVp x-ray spectrum with 20 mm Al filtration interacting with a CZT detector at various input flux rates. Output count rates are determined at various photon energy threshold levels, and the percentage of counts lost (e.g., due to deadtime or pile-up) is calculated from the ratio of output to input counts. The energy resolution simulations involve thermal and flicker noise originating from each circuit element in a design. Results: Circuit designs compatible with pixel pitches ranging from 250 to 1000 µm that allow count rates over a megacount per second per pixel appear feasible. Such rates are expected to be suitable for radiographic and fluoroscopic imaging. Results for the analog front-end circuitry of the pixels show that acceptable energy resolution can also be achieved. Conclusion: PCAs created using polycrystalline silicon have the potential to offer monolithic large-area detectors with count rate performance comparable to those of crystalline silicon detectors. Further improvement through detailed

Silicone nanoparticles do not induce immune responses by naïve human peripheral blood mononuclear cells: implications in breast implants.

PubMed

Nair, Narayanan; Pilakka-Kanthikeel, Sudheesh; Saiyed, Zainulabedin; Yndart, Adriana; Nair, Madhavan

2012-07-01

Several studies have reported adverse immunological effects of silicone due to their ability to induce proinflammatory molecules, such as tumor necrosis factor-α (TNF-α) and interleukin-6 (IL-6). In recent years, use of nanoparticles has been under fast development for therapeutic drug targeting, diagnostic imaging, and immune response in various fields of nanomedicine. The authors hypothesize that immune responses induced by in vivo use of silicone materials can be reduced or eliminated by the use of nanosilicone. Peripheral blood mononuclear cells obtained from naïve normal subjects were cultured with different concentrations of silicone nanoparticles and microparticles for 24 hours. The culture supernatants were quantitated for TNF-α, IL-6, and interferon-γ (IFN-γ) secretion by enzyme-linked immunosorbent assay. The pellets were used for specific IL-6, TNF-α, and IFN-γ gene expression by real-time polymerase chain reaction, respectively. Cytotoxicity was evaluated by XTT viability assay. Results were compared between silicone nanoparticles and microparticles and untreated controls. Silicone nanoparticles up to 100 μg/ml did not induce any detectable levels of specific TNF-α, IFN-γ, and IL-6 gene expression and protein production and the results were comparable to those for untreated controls. Silicone microparticles at 100 μg/ml, however, significantly induced the production and gene expression of TNF-α, IL-6, and IFN-γ by peripheral blood mononuclear cells. XTT viability assay showed that silicone nanoparticles or microparticles, even at the highest concentration used, were not cytotoxic to cells. The results suggest that silicone nanoparticles can be engineered to avoid immune recognition and subsequent silicone microparticle-related adverse effects and thus may be of therapeutic significance in the cosmetic industry, plastic surgery, and aesthetic medicine.

Characterisation of crystal matrices and single pixels for nuclear medicine applications

NASA Astrophysics Data System (ADS)

Herbert, D. J.; Belcari, N.; Camarda, M.; Guerra, A. Del; Vaiano, A.

2005-01-01

Commercially constructed crystal matrices are characterised for use with PSPMT detectors for PET system developments and other nuclear medicine applications. The matrices of different scintillation materials were specified with pixel dimensions of 1.5×1.5 mm2 in cross-section and a length corresponding to one gamma ray interaction length at 511 keV. The materials used in this study were BGO, LSO, LYSO, YSO and CsI(Na). Each matrix was constructed using a white TiO loaded epoxy that forms a 0.2 mm septa between each pixel. The white epoxy is not the optimum choice in terms of the reflective properties, but represents a good compromise between cost and the need for optical isolation between pixels. We also tested a YAP matrix that consisted of pixels of the same size specification but was manufactured by a different company, who instead of white epoxy, used a thin aluminium reflective layer for optical isolation that resulted in a septal thickness of just 0.01 mm, resulting in a much higher packing fraction. The characteristics of the scintillation materials, such as the light output and energy resolution, were first studied in the form of individual crystal elements by using a single pixel HPD. A comparison of individual pixels with and without the epoxy/dielectric coatings was also performed. Then the matrices themselves were coupled to a PSPMT in order to study the imaging performance. In particular, the system pixel resolution and the peak to valley ratio were measured at 511 and 122 keV.

The development of high resolution silicon x-ray microcalorimeters

NASA Astrophysics Data System (ADS)

Porter, F. S.; Kelley, R. L.; Kilbourne, C. A.

2005-12-01

Recently we have produced x-ray microcalorimeters with resolving powers approaching 2000 at 5.9 keV using a spare XRS microcalorimeter array. We attached 400 um square, 8 um thick HgTe absorbers using a variety of attachment methods to an XRS array and ran the detector array at temperatures between 40 and 60 mK. The best results were for absorbers attached using the standard XRS absorber-pixel thermal isolation scheme utilizing SU8 polymer tubes. In this scenario we achieved a resolution of 3.2 eV FWHM at 5.9 keV. Substituting a silicon spacer for the SU8 tubes also yielded sub-4eV results. In contrast, absorbers attached directly to the thermistor produced significant position dependence and thus degraded resolution. Finally, we tested standard 640um-square XRS detectors at reduced bias power at 50mK and achieved a resolution of 3.7eV, a 50% improvement over the XRS flight instrument. Implanted silicon microcalorimeters are a mature flight-qualified technology that still has a substantial phase space for future development. We will discuss these new high resolution results, the various absorber attachment schemes, planned future improvements, and, finally, their relevance to future high resolution x-ray spectrometers including Constellation-X.

Fully depleted CMOS pixel sensor development and potential applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baudot, J.; Kachel, M.; CNRS, UMR7178, 67037 Strasbourg

CMOS pixel sensors are often opposed to hybrid pixel sensors due to their very different sensitive layer. In standard CMOS imaging processes, a thin (about 20 μm) low resistivity epitaxial layer acts as the sensitive volume and charge collection is mostly driven by thermal agitation. In contrast, the so-called hybrid pixel technology exploits a thick (typically 300 μm) silicon sensor with high resistivity allowing for the depletion of this volume, hence charges drift toward collecting electrodes. But this difference is fading away with the recent availability of some CMOS imaging processes based on a relatively thick (about 50 μm) highmore » resistivity epitaxial layer which allows for full depletion. This evolution extents the range of applications for CMOS pixel sensors where their known assets, high sensitivity and granularity combined with embedded signal treatment, could potentially foster breakthrough in detection performances for specific scientific instruments. One such domain is the Xray detection for soft energies, typically below 10 keV, where the thin sensitive layer was previously severely impeding CMOS sensor usage. Another application becoming realistic for CMOS sensors, is the detection in environment with a high fluence of non-ionizing radiation, such as hadron colliders. However, when considering highly demanding applications, it is still to be proven that micro-circuits required to uniformly deplete the sensor at the pixel level, do not mitigate the sensitivity and efficiency required. Prototype sensors in two different technologies with resistivity higher than 1 kΩ, sensitive layer between 40 and 50 μm and featuring pixel pitch in the range 25 to 50 μm, have been designed and fabricated. Various biasing architectures were adopted to reach full depletion with only a few volts. Laboratory investigations with three types of sources (X-rays, β-rays and infrared light) demonstrated the validity of the approach with respect to depletion

Comparative study of various pixel photodiodes for digital radiography: Junction structure, corner shape and noble window opening

NASA Astrophysics Data System (ADS)

Kang, Dong-Uk; Cho, Minsik; Lee, Dae Hee; Yoo, Hyunjun; Kim, Myung Soo; Bae, Jun Hyung; Kim, Hyoungtaek; Kim, Jongyul; Kim, Hyunduk; Cho, Gyuseong

2012-05-01

Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 µm × 50 µm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

The charge pump PLL clock generator designed for the 1.56 ns bin size time-to-digital converter pixel array of the Timepix3 readout ASIC

NASA Astrophysics Data System (ADS)

Fu, Y.; Brezina, C.; Desch, K.; Poikela, T.; Llopart, X.; Campbell, M.; Massimiliano, D.; Gromov, V.; Kluit, R.; van Beauzekom, M.; Zappon, F.; Zivkovic, V.

2014-01-01

Timepix3 is a newly developed pixel readout chip which is expected to be operated in a wide range of gaseous and silicon detectors. It is made of 256 × 256 pixels organized in a square pixel-array with 55 μm pitch. Oscillators running at 640 MHz are distributed across the pixel-array and allow for a highly accurate measurement of the arrival time of a hit. This paper concentrates on a low-jitter phase locked loop (PLL) that is located in the chip periphery. This PLL provides a control voltage which regulates the actual frequency of the individual oscillators, allowing for compensation of process, voltage, and temperature variations.

Diamond Pixel Detectors

NASA Astrophysics Data System (ADS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Doroshenko, J.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foster, J.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Gobbi, B.; Grim, G. P.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Lander, R.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L. S.; Pernicka, M.; Perera, L.; Pirollo, S.; Plano, R.; Procario, M.; Riester, J. L.; Roe, S.; Rott, C.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.

2001-06-01

Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles.

Fabrication of X-ray Microcalorimeter Focal Planes Composed of Two Distinct Pixel Types

NASA Technical Reports Server (NTRS)

Wassell, Edward J.; Adams, Joseph S.; Bandler, Simon R.; Betancour-Martinez, Gabriele L; Chiao, Meng P.; Chang, Meng Ping; Chervenak, James A.; Datesman, Aaron M.; Eckart, Megan E.; Ewin, Audrey J.;

Novel duplex vapor-electrochemical method for silicon solar cells

NASA Technical Reports Server (NTRS)

Kapur, V. K.; Nanis, L.; Sanjurjo, A.

1977-01-01

Silicon obtained by the SiF4-Na reaction was analyzed by spark source mass spectrometry (SSMS). Silicon samples prepared from induction melted powder were evaluated for electrical properties using four point probe conductivity and thermoelectric methods. SiF4-Na reaction under P sub SiF4 greater than 1 atmosphere. The amount of silicon produced was increased from 25 g per batch (in the glass reactor) to greater than 70 g per batch in the stainless steel reactor. The study of the effects of reaction variables such as P sub SiF4 and maximum temperature attained on the particle size of silicon powder showed that the silicon particle size tends to grow larger with increasing pressure of the SiF4 gas in the reaction system.

Fast Readout Architectures for Large Arrays of Digital Pixels: Examples and Applications

PubMed Central

Gabrielli, A.

2014-01-01

Modern pixel detectors, particularly those designed and constructed for applications and experiments for high-energy physics, are commonly built implementing general readout architectures, not specifically optimized in terms of speed. High-energy physics experiments use bidimensional matrices of sensitive elements located on a silicon die. Sensors are read out via other integrated circuits bump bonded over the sensor dies. The speed of the readout electronics can significantly increase the overall performance of the system, and so here novel forms of readout architectures are studied and described. These circuits have been investigated in terms of speed and are particularly suited for large monolithic, low-pitch pixel detectors. The idea is to have a small simple structure that may be expanded to fit large matrices without affecting the layout complexity of the chip, while maintaining a reasonably high readout speed. The solutions might be applied to devices for applications not only in physics but also to general-purpose pixel detectors whenever online fast data sparsification is required. The paper presents also simulations on the efficiencies of the systems as proof of concept for the proposed ideas. PMID:24778588

Corrosion Behavior of Ti60 Alloy under a Solid NaCl Deposit in Wet Oxygen Flow at 600 °C

PubMed Central

Fan, Lei; Liu, Li; Yu, Zhongfen; Cao, Min; Li, Ying; Wang, Fuhui

2016-01-01

The corrosion behavior of Ti60 alloy covered with a solid NaCl deposit in wet oxygen flow at 600 °C has been studied further by SEM, EDX, XPS, XRD, TEM and EPMA analysis. The results show that solid NaCl and H2O react with Ti oxides, which destroyed the Ti oxide scale to yield the non-protective Na4Ti5O12 and other volatile species. The resulting corrosion product scale was multilayered and contained abundant rapid diffusion channels leading to the fast diffusion which improved the corrosion rate. A possible mechanism has been proposed for the NaCl-covered Ti60 alloy, based on the experimental results. PMID:27357732

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Miniature Wide-Angle Lens for Small-Pixel Electronic Camera

NASA Technical Reports Server (NTRS)

Mouroulils, Pantazis; Blazejewski, Edward

2009-01-01

A proposed wideangle lens is shown that would be especially well suited for an electronic camera in which the focal plane is occupied by an image sensor that has small pixels. The design of the lens is intended to satisfy requirements for compactness, high image quality, and reasonably low cost, while addressing issues peculiar to the operation of small-pixel image sensors. Hence, this design is expected to enable the development of a new generation of compact, high-performance electronic cameras. The lens example shown has a 60 degree field of view and a relative aperture (f-number) of 3.2. The main issues affecting the design are also shown.

Molecular-dynamics simulations of energetic C{sub 60} impacts on (2x1)-(100) silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Xiaoyuan; Albe, Karsten; Averback, Robert S.

2000-07-01

Single impacts of energetic C{sub 60} clusters on (2x1)-(100) silicon substrates are studied by molecular-dynamics simulations. The role of impact energies and internal cluster energy are investigated in detail. Six different energy regimes can be identified at the end of the ballistic phase: At thermal energies below 20 eV the fullerene cages undergo elastic deformation, while impinging on the surface, and are mostly chemisorpted on top of the (2x1)-dimer rows. Between 20 and 100 eV the cage structure is preserved after the collision, but the cluster comes to rest within a few monolayers of the silicon surface. At energies ofmore » 100-500 eV the cluster partially decomposes and small coherent carbon caps are embedded in the surface. At higher energies up to 1.5 keV complete decomposition of the fullerene cluster occurs and an amorphous zone is formed in the subsurface area. At energies greater than approximately 1.5 keV craters form and above 6 keV sputtering becomes significant. In all cases the substrate temperature is of minor influence on the final result, but the projectile temperature is important for impacts at lower energies (<1.5 keV). For high energy impacts the ballistics resemble that of single atom impacts. Nearly 1:1 stoichiometry is obtained for impact energies around 1 keV. These results reveal an interesting possibility for controlled implantation of C in Si at high local concentrations, which might allow the formation of silicon carbide. (c) 2000 American Institute of Physics.« less

On the clathrate form of elemental silicon, Si 136: preparation and characterisation of Na xSi 136 ( x→0)

NASA Astrophysics Data System (ADS)

Ammar, Abdelaziz; Cros, Christian; Pouchard, Michel; Jaussaud, Nicolas; Bassat, Jean-Marc; Villeneuve, Gérard; Duttine, Mathieu; Ménétrier, Michel; Reny, Edouard

2004-05-01

The clathrate form of silicon, Si 136 (otherwise known as Si 34), having a residual sodium content as low as 35 ppm (i.e., x˜0.0058 in Na xSi 136), has been prepared by thermal decomposition of NaSi under high vacuum, followed by several other treatments under vacuum, and completed by repeated reactions with iodine. The residual amount of sodium has been determined by a combination of analytic and spectroscopic methods involving XRD, electron probe microanalysis, atomic absorption, NMR and EPR. This latter technique proved to be very appropriate to the characterisation of very diluted sodium atoms in such clathrate structure and to the quantitative determination of its residual concentration.

Surface enhanced Raman spectroscopy of fullerene C60 drop-deposited on the silvered porous silicon

NASA Astrophysics Data System (ADS)

Khinevich, N.; Girel, K.; Bandarenka, H.; Salo, V.; Mosunov, A.

2017-11-01

Surface enhanced Raman spectroscopy (SERS) of fullerene C60 drop-deposited from the 1.4·10-4 M aqueous solutions on the silvered porous silicon (Ag/PS) is reported for the first time. The used concentration is found to be not detected by the ordinary Raman spectroscopy. It is shown that SERS-spectrum of the fullerene deposited from the air-aged solution are characterized by less intensity than that of the fullerene solution kept out of the air. This indicates degradation of the fullerene solution due to oxidation. The results are prospective for the fast qualitative and quantitative analysis of the fullerene-based materials.

Variable pixel size ionospheric tomography

NASA Astrophysics Data System (ADS)

Zheng, Dunyong; Zheng, Hongwei; Wang, Yanjun; Nie, Wenfeng; Li, Chaokui; Ao, Minsi; Hu, Wusheng; Zhou, Wei

2017-06-01

A novel ionospheric tomography technique based on variable pixel size was developed for the tomographic reconstruction of the ionospheric electron density (IED) distribution. In variable pixel size computerized ionospheric tomography (VPSCIT) model, the IED distribution is parameterized by a decomposition of the lower and upper ionosphere with different pixel sizes. Thus, the lower and upper IED distribution may be very differently determined by the available data. The variable pixel size ionospheric tomography and constant pixel size tomography are similar in most other aspects. There are some differences between two kinds of models with constant and variable pixel size respectively, one is that the segments of GPS signal pay should be assigned to the different kinds of pixel in inversion; the other is smoothness constraint factor need to make the appropriate modified where the pixel change in size. For a real dataset, the variable pixel size method distinguishes different electron density distribution zones better than the constant pixel size method. Furthermore, it can be non-chided that when the effort is spent to identify the regions in a model with best data coverage. The variable pixel size method can not only greatly improve the efficiency of inversion, but also produce IED images with high fidelity which are the same as a used uniform pixel size method. In addition, variable pixel size tomography can reduce the underdetermined problem in an ill-posed inverse problem when the data coverage is irregular or less by adjusting quantitative proportion of pixels with different sizes. In comparison with constant pixel size tomography models, the variable pixel size ionospheric tomography technique achieved relatively good results in a numerical simulation. A careful validation of the reliability and superiority of variable pixel size ionospheric tomography was performed. Finally, according to the results of the statistical analysis and quantitative comparison, the

Measurements and simulations of MAPS (Monolithic Active Pixel Sensors) response to charged particles - a study towards a vertex detector at the ILC

NASA Astrophysics Data System (ADS)

Maczewski, Lukasz

2010-05-01

The International Linear Collider (ILC) is a project of an electron-positron (e+e-) linear collider with the centre-of-mass energy of 200-500 GeV. Monolithic Active Pixel Sensors (MAPS) are one of the proposed silicon pixel detector concepts for the ILC vertex detector (VTX). Basic characteristics of two MAPS pixel matrices MIMOSA-5 (17 μm pixel pitch) and MIMOSA-18 (10 μm pixel pitch) are studied and compared (pedestals, noises, calibration of the ADC-to-electron conversion gain, detector efficiency and charge collection properties). The e+e- collisions at the ILC will be accompanied by intense beamsstrahlung background of electrons and positrons hitting inner planes of the vertex detector. Tracks of this origin leave elongated clusters contrary to those of secondary hadrons. Cluster characteristics and orientation with respect to the pixels netting are studied for perpendicular and inclined tracks. Elongation and precision of determining the cluster orientation as a function of the angle of incidence were measured. A simple model of signal formation (based on charge diffusion) is proposed and tested using the collected data.

Study of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors with varying pixel sizes

NASA Astrophysics Data System (ADS)

Ocampo Giraldo, L.; Bolotnikov, A. E.; Camarda, G. S.; De Geronimo, G.; Fried, J.; Gul, R.; Hodges, D.; Hossain, A.; Ünlü, K.; Vernon, E.; Yang, G.; James, R. B.

2018-03-01

We evaluated the sub-pixel position resolution achievable in large-volume CdZnTe pixelated detectors with conventional pixel patterns and for several different pixel sizes: 2.8 mm, 1.72 mm, 1.4 mm and 0.8 mm. Achieving position resolution below the physical dimensions of pixels (sub-pixel resolution) is a practical path for making high-granularity position-sensitive detectors, <100 μm, using a limited number of pixels dictated by the mechanical constraints and multi-channel readout electronics. High position sensitivity is important for improving the imaging capability of CZT gamma cameras. It also allows for making more accurate corrections of response non-uniformities caused by crystal defects, thus enabling use of standard-grade (unselected) and less expensive CZT crystals for producing large-volume position-sensitive CZT detectors feasible for many practical applications. We analyzed the digitized charge signals from a representative 9 pixels and the cathode, generated using a pulsed-laser light beam focused down to 10 μm (650 nm) to scan over a selected 3 × 3 pixel area. We applied our digital pulse processing technique to the time-correlated signals captured from adjacent pixels to achieve and evaluate the capability for sub-pixel position resolution. As an example, we also demonstrated an application of 3D corrections to improve the energy resolution and positional information of the events for the tested detectors.

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel †

PubMed Central

Takahashi, Seiji; Huang, Yi-Min; Sze, Jhy-Jyi; Wu, Tung-Ting; Guo, Fu-Sheng; Hsu, Wei-Cheng; Tseng, Tung-Hsiung; Liao, King; Kuo, Chin-Chia; Chen, Tzu-Hsiang; Chiang, Wei-Chieh; Chuang, Chun-Hao; Chou, Keng-Yu; Chung, Chi-Hsien; Chou, Kuo-Yu; Tseng, Chien-Hsien; Wang, Chuan-Joung; Yaung, Dun-Nien

2017-01-01

A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e−/s at 60 °C, an ultra-low read noise of 0.90 e−·rms, a high full well capacity (FWC) of 4100 e−, and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed. PMID:29206162

Modelling electron distributions within ESA's Gaia satellite CCD pixels to mitigate radiation damage

NASA Astrophysics Data System (ADS)

Seabroke, G. M.; Holland, A. D.; Burt, D.; Robbins, M. S.

2009-08-01

The Gaia satellite is a high-precision astrometry, photometry and spectroscopic ESA cornerstone mission, currently scheduled for launch in 2012. Its primary science drivers are the composition, formation and evolution of the Galaxy. Gaia will achieve its unprecedented positional accuracy requirements with detailed calibration and correction for radiation damage. At L2, protons cause displacement damage in the silicon of CCDs. The resulting traps capture and emit electrons from passing charge packets in the CCD pixel, distorting the image PSF and biasing its centroid. Microscopic models of Gaia's CCDs are being developed to simulate this effect. The key to calculating the probability of an electron being captured by a trap is the 3D electron density within each CCD pixel. However, this has not been physically modelled for the Gaia CCD pixels. In Seabroke, Holland & Cropper (2008), the first paper of this series, we motivated the need for such specialised 3D device modelling and outlined how its future results will fit into Gaia's overall radiation calibration strategy. In this paper, the second of the series, we present our first results using Silvaco's physics-based, engineering software: the ATLAS device simulation framework. Inputting a doping profile, pixel geometry and materials into ATLAS and comparing the results to other simulations reveals that ATLAS has a free parameter, fixed oxide charge, that needs to be calibrated. ATLAS is successfully benchmarked against other simulations and measurements of a test device, identifying how to use it to model Gaia pixels and highlighting the affect of different doping approximations.

PIXEL PUSHER

NASA Technical Reports Server (NTRS)

Stanfill, D. F.

1994-01-01

Pixel Pusher is a Macintosh application used for viewing and performing minor enhancements on imagery. It will read image files in JPL's two primary image formats- VICAR and PDS - as well as the Macintosh PICT format. VICAR (NPO-18076) handles an array of image processing capabilities which may be used for a variety of applications including biomedical image processing, cartography, earth resources, and geological exploration. Pixel Pusher can also import VICAR format color lookup tables for viewing images in pseudocolor (256 colors). This program currently supports only eight bit images but will work on monitors with any number of colors. Arbitrarily large image files may be viewed in a normal Macintosh window. Color and contrast enhancement can be performed with a graphical "stretch" editor (as in contrast stretch). In addition, VICAR images may be saved as Macintosh PICT files for exporting into other Macintosh programs, and individual pixels can be queried to determine their locations and actual data values. Pixel Pusher is written in Symantec's Think C and was developed for use on a Macintosh SE30, LC, or II series computer running System Software 6.0.3 or later and 32 bit QuickDraw. Pixel Pusher will only run on a Macintosh which supports color (whether a color monitor is being used or not). The standard distribution medium for this program is a set of three 3.5 inch Macintosh format diskettes. The program price includes documentation. Pixel Pusher was developed in 1991 and is a copyrighted work with all copyright vested in NASA. Think C is a trademark of Symantec Corporation. Macintosh is a registered trademark of Apple Computer, Inc.

Hot pixel generation in active pixel sensors: dosimetric and micro-dosimetric response

NASA Technical Reports Server (NTRS)

Scheick, Leif; Novak, Frank

2003-01-01

The dosimetric response of an active pixel sensor is analyzed. heavy ions are seen to damage the pixel in much the same way as gamma radiation. The probability of a hot pixel is seen to exhibit behavior that is not typical with other microdose effects.

Novel duplex vapor-electrochemical method for silicon solar cells

NASA Technical Reports Server (NTRS)

Nanis, L.; Sanjurjo, A.; Westphal, S.

1979-01-01

Optimization studies were carried out for the SiF4-Na reaction with solid Na feed. The goals of the study were the consistent production of high purity reaction products and the gathering of relevant information needed to scale-up the reactor. Parameters studied include: (1) effect of surface to volume ratio of Na slices on the extent of reaction; (2) effect of Na surface oxidation on the extent of reaction; (3) effect of external heating on the extent of SiF4-Na reaction; (4) effect of Na slice addition rate on extent of the reaction; and (5) SiF4-Na reaction - high pressure experiments. An investigation was also made of the possible role played by NaF as a fluxing agent during the separation of silicon by melting of the reaction product (Si + NaF) mixture. Since silicon can be produced by the thermite reaction between Na2SiF6 and Na, studies were initiated to gather information on parameters which control the efficiency of the thermite reaction.

Selecting Pixels for Kepler Downlink

NASA Technical Reports Server (NTRS)

Bryson, Stephen T.; Jenkins, Jon M.; Klaus, Todd C.; Cote, Miles T.; Quintana, Elisa V.; Hall, Jennifer R.; Ibrahim, Khadeejah; Chandrasekaran, Hema; Caldwell, Douglas A.; Van Cleve, Jeffrey E.;

Study of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors with varying pixel sizes

DOE PAGES

Giraldo, L. Ocampo; Bolotnikov, A. E.; Camarda, G. S.; ...

2017-12-18

Here, we evaluated the sub-pixel position resolution achievable in large-volume CdZnTe pixelated detectors with conventional pixel patterns and for several different pixel sizes: 2.8 mm, 1.72 mm, 1.4 mm and 0.8 mm. Achieving position resolution below the physical dimensions of pixels (sub-pixel resolution) is a practical path for making high-granularity position-sensitive detectors, <100 μμm, using a limited number of pixels dictated by the mechanical constraints and multi-channel readout electronics. High position sensitivity is important for improving the imaging capability of CZT gamma cameras. It also allows for making more accurate corrections of response non-uniformities caused by crystal defects, thus enablingmore » use of standard-grade (unselected) and less expensive CZT crystals for producing large-volume position-sensitive CZT detectors feasible for many practical applications. We analyzed the digitized charge signals from a representative 9 pixels and the cathode, generated using a pulsed-laser light beam focused down to 10 m (650 nm) to scan over a selected 3×3 pixel area. We applied our digital pulse processing technique to the time-correlated signals captured from adjacent pixels to achieve and evaluate the capability for sub-pixel position resolution. As an example, we also demonstrated an application of 3D corrections to improve the energy resolution and positional information of the events for the tested detectors.« less

Study of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors with varying pixel sizes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giraldo, L. Ocampo; Bolotnikov, A. E.; Camarda, G. S.

Here, we evaluated the sub-pixel position resolution achievable in large-volume CdZnTe pixelated detectors with conventional pixel patterns and for several different pixel sizes: 2.8 mm, 1.72 mm, 1.4 mm and 0.8 mm. Achieving position resolution below the physical dimensions of pixels (sub-pixel resolution) is a practical path for making high-granularity position-sensitive detectors, <100 μμm, using a limited number of pixels dictated by the mechanical constraints and multi-channel readout electronics. High position sensitivity is important for improving the imaging capability of CZT gamma cameras. It also allows for making more accurate corrections of response non-uniformities caused by crystal defects, thus enablingmore » use of standard-grade (unselected) and less expensive CZT crystals for producing large-volume position-sensitive CZT detectors feasible for many practical applications. We analyzed the digitized charge signals from a representative 9 pixels and the cathode, generated using a pulsed-laser light beam focused down to 10 m (650 nm) to scan over a selected 3×3 pixel area. We applied our digital pulse processing technique to the time-correlated signals captured from adjacent pixels to achieve and evaluate the capability for sub-pixel position resolution. As an example, we also demonstrated an application of 3D corrections to improve the energy resolution and positional information of the events for the tested detectors.« less

Process Research on Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1983-01-01

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels.

PubMed

Yokogawa, Sozo; Oshiyama, Itaru; Ikeda, Harumi; Ebiko, Yoshiki; Hirano, Tomoyuki; Saito, Suguru; Oinoue, Takashi; Hagimoto, Yoshiya; Iwamoto, Hayato

2017-06-19

We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700-1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations.

Development of a cylindrical tracking detector with multichannel scintillation fibers and pixelated photon detector readout

NASA Astrophysics Data System (ADS)

Akazawa, Y.; Miwa, K.; Honda, R.; Shiozaki, T.; Chiga, N.

2015-07-01

We are developing a cylindrical tracking detector for a Σp scattering experiment in J-PARC with scintillation fibers and the Pixelated Photon Detector (PPD) readout, which is called as cylindrical fiber tracker (CFT), in order to reconstruct trajectories of charged particles emitted inside CFT. CFT works not only as a tracking detector but also a particle identification detector from energy deposits. A prototype CFT consisting of two straight layers and one spiral layer was constructed. About 1100 scintillation fibers with a diameter of 0.75 mm (Kuraray SCSF-78 M) were used. Each fiber signal was read by Multi-Pixel Photon Counter (MPPC, HPK S10362-11-050P, 1×1 mm2, 400 pixels) fiber by fiber. MPPCs were handled with Extended Analogue Silicon Photomultipliers Integrated ReadOut Chip (EASIROC) boards, which were developed for the readout of a large number of MPPCs. The energy resolution of one layer was 28% for a 70 MeV proton where the energy deposit in fibers was 0.7 MeV.

Electrochemical Deposition of High Purity Silicon from Molten Salts

NASA Astrophysics Data System (ADS)

Haarberg, Geir Martin

Several approaches were tried in order to develop an electrochemical route for producing high purity silicon from molten salts. SiO2, K2SiF6 and metallurgical silicon were used as the source of silicon. Molten electrolytes based on chloride (CaCl2-NaCl) and fluoride (LiF-KF) at temperatures from 550 - 900 oC were used. Transient electrochemical techniques were used to study the electrochemical behaviour of dissolved silicon species. Electrolysis experiments were carried out to deposit silicon.

Electrochemical Deposition of High Purity Silicon in Molten Salts

NASA Astrophysics Data System (ADS)

Haarberg, Geir Martin

Several approaches were tried in order to develop an electrochemical route for producing high purity silicon from molten salts. SiO2, K2SiF6 and metallurgical silicon were used as the source of silicon. Molten electrolytes based on chloride (CaCl2-NaCl) and fluoride (LiF-KF) at temperatures from 550 - 900 °C were used. Transient electrochemical techniques were used to study the electrochemical behaviour of dissolved silicon species. Electrolysis experiments were carried out to deposit silicon.

Fabrication of X-ray Microcalorimeter Focal Planes Composed of Two Distinct Pixel Types.

PubMed

Wassell, E J; Adams, J S; Bandler, S R; Betancourt-Martinez, G L; Chiao, M P; Chang, M P; Chervenak, J A; Datesman, A M; Eckart, M E; Ewin, A J; Finkbeiner, F M; Ha, J Y; Kelley, R; Kilbourne, C A; Miniussi, A R; Sakai, K; Porter, F; Sadleir, J E; Smith, S J; Wakeham, N A; Yoon, W

2017-06-01

We are developing superconducting transition-edge sensor (TES) microcalorimeter focal planes for versatility in meeting specifications of X-ray imaging spectrometers including high count-rate, high energy resolution, and large field-of-view. In particular, a focal plane composed of two sub-arrays: one of fine-pitch, high count-rate devices and the other of slower, larger pixels with similar energy resolution, offers promise for the next generation of astrophysics instruments, such as the X-ray Integral Field Unit (X-IFU) instrument on the European Space Agency's Athena mission. We have based the sub-arrays of our current design on successful pixel designs that have been demonstrated separately. Pixels with an all gold X-ray absorber on 50 and 75 micron scales where the Mo/Au TES sits atop a thick metal heatsinking layer have shown high resolution and can accommodate high count-rates. The demonstrated larger pixels use a silicon nitride membrane for thermal isolation, thinner Au and an added bismuth layer in a 250 micron square absorber. To tune the parameters of each sub-array requires merging the fabrication processes of the two detector types. We present the fabrication process for dual production of different X-ray absorbers on the same substrate, thick Au on the small pixels and thinner Au with a Bi capping layer on the larger pixels to tune their heat capacities. The process requires multiple electroplating and etching steps, but the absorbers are defined in a single ion milling step. We demonstrate methods for integrating heatsinking of the two types of pixel into the same focal plane consistent with the requirements for each sub-array, including the limiting of thermal crosstalk. We also discuss fabrication process modifications for tuning the intrinsic transition temperature (T c ) of the bilayers for the different device types through variation of the bilayer thicknesses. The latest results on these "hybrid" arrays will be presented.

Fabrication of X-ray Microcalorimeter Focal Planes Composed of Two Distinct Pixel Types

PubMed Central

Wassell, E. J.; Adams, J. S.; Bandler, S. R.; Betancourt-Martinez, G. L.; Chiao, M. P.; Chang, M. P.; Chervenak, J. A.; Datesman, A. M.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Ha, J. Y.; Kelley, R.; Kilbourne, C. A.; Miniussi, A. R.; Sakai, K.; Porter, F.; Sadleir, J. E.; Smith, S. J.; Wakeham, N. A.; Yoon, W.

2017-01-01

We are developing superconducting transition-edge sensor (TES) microcalorimeter focal planes for versatility in meeting specifications of X-ray imaging spectrometers including high count-rate, high energy resolution, and large field-of-view. In particular, a focal plane composed of two sub-arrays: one of fine-pitch, high count-rate devices and the other of slower, larger pixels with similar energy resolution, offers promise for the next generation of astrophysics instruments, such as the X-ray Integral Field Unit (X-IFU) instrument on the European Space Agency’s Athena mission. We have based the sub-arrays of our current design on successful pixel designs that have been demonstrated separately. Pixels with an all gold X-ray absorber on 50 and 75 micron scales where the Mo/Au TES sits atop a thick metal heatsinking layer have shown high resolution and can accommodate high count-rates. The demonstrated larger pixels use a silicon nitride membrane for thermal isolation, thinner Au and an added bismuth layer in a 250 micron square absorber. To tune the parameters of each sub-array requires merging the fabrication processes of the two detector types. We present the fabrication process for dual production of different X-ray absorbers on the same substrate, thick Au on the small pixels and thinner Au with a Bi capping layer on the larger pixels to tune their heat capacities. The process requires multiple electroplating and etching steps, but the absorbers are defined in a single ion milling step. We demonstrate methods for integrating heatsinking of the two types of pixel into the same focal plane consistent with the requirements for each sub-array, including the limiting of thermal crosstalk. We also discuss fabrication process modifications for tuning the intrinsic transition temperature (Tc) of the bilayers for the different device types through variation of the bilayer thicknesses. The latest results on these “hybrid” arrays will be presented. PMID:28804229

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

NASA Technical Reports Server (NTRS)

Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

2000-01-01

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Stability of amorphous silicon thin film transistors and circuits

NASA Astrophysics Data System (ADS)

Liu, Ting

Hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) have been widely used for the active-matrix addressing of flat panel displays, optical scanners and sensors. Extending the application of the a-Si TFTs from switches to current sources, which requires continuous operation such as for active-matrix organic light-emitting-diode (AMOLED) pixels, makes stability a critical issue. This thesis first presents a two-stage model for the stability characterization and reliable lifetime prediction for highly stable a-Si TFTs under low gate-field stress. Two stages of the threshold voltage shift are identified from the decrease of the drain saturation current under low-gate field. The first initial stage dominates up to hours or days near room temperature. It can be characterized with a stretched-exponential model, with the underlying physical mechanism of charge trapping in the gate dielectric. The second stage dominates in the long term and then saturates. It corresponds to the breaking of weak bonds in the amorphous silicon. It can be modeled with a "unified stretched exponential fit," in which a thermalization energy is used to unify experimental measurements of drain current decay at different temperatures into a single curve. Two groups of experiments were conducted to reduce the drain current instability of a-Si TFTs under prolonged gate bias. Deposition conditions for the silicon nitride (SiNx) gate insulator and the a-Si channel layer were varied, and TFTs were fabricated with all reactive ion etching steps, or with all wet etching steps, the latter in a new process. The two-stage model that unites charge trapping in the SiNx gate dielectric and defect generation in the a-Si channel was used to interpret the experimental results. We identified the optimal substrate temperature, gas flow ratios, and RF deposition power densities. The stability of the a-Si channel depends also on the deposition conditions for the underlying SiNx gate insulator. TFTs made

First light from a very large area pixel array for high-throughput x-ray polarimetry

NASA Astrophysics Data System (ADS)

Bellazzini, R.; Spandre, G.; Minuti, M.; Baldini, L.; Brez, A.; Cavalca, F.; Latronico, L.; Omodei, N.; Massai, M. M.; Sgrò, C.; Costa, E.; Soffitta, P.; Krummenacher, F.; de Oliveira, R.

2006-06-01

We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which represents a big step forward both in terms of size and performance, is the last version of three generations of custom ASICs of increasing complexity. The CMOS pixel array has the top metal layer patterned in a matrix of 105600 hexagonal pixels at 50μm pitch. Each pixel is directly connected to the underneath full electronics chain which has been realized in the remaining five metal and single poly-silicon layers of a standard 0.18μm CMOS VLSI technology. The chip has customizable self-triggering capability and includes a signal pre-processing function for the automatic localization of the event coordinates. In this way it is possible to reduce significantly the readout time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. The very small pixel area and the use of a deep sub-micron CMOS technology has brought the noise down to 50 electrons ENC. Results from in depth tests of this device when coupled to a fine pitch (50μm on a triangular pattern) Gas Electron Multiplier are presented. The matching of readout and gas amplification pitch allows getting optimal results. The application of this detector for Astronomical X-Ray Polarimetry is discussed. The experimental detector response to polarized and unpolarized X-ray radiation when working with two gas mixtures and two different photon energies is shown. Results from a full MonteCarlo simulation for several galactic and extragalactic astronomical sources are also reported.

Technology and design of an active-matrix OLED on crystalline silicon direct-view display for a wristwatch computer

NASA Astrophysics Data System (ADS)

Sanford, James L.; Schlig, Eugene S.; Prache, Olivier; Dove, Derek B.; Ali, Tariq A.; Howard, Webster E.

2002-02-01

The IBM Research Division and eMagin Corp. jointly have developed a low-power VGA direct view active matrix OLED display, fabricated on a crystalline silicon CMOS chip. The display is incorporated in IBM prototype wristwatch computers running the Linus operating system. IBM designed the silicon chip and eMagin developed the organic stack and performed the back-end-of line processing and packaging. Each pixel is driven by a constant current source controlled by a CMOS RAM cell, and the display receives its data from the processor memory bus. This paper describes the OLED technology and packaging, and outlines the design of the pixel and display electronics and the processor interface. Experimental results are presented.

In-depth study of single photon time resolution for the Philips digital silicon photomultiplier

NASA Astrophysics Data System (ADS)

Liu, Z.; Gundacker, S.; Pizzichemi, M.; Ghezzi, A.; Auffray, E.; Lecoq, P.; Paganoni, M.

2016-06-01

The digital silicon photomultiplier (SiPM) has been commercialised by Philips as an innovative technology compared to analog silicon photomultiplier devices. The Philips digital SiPM, has a pair of time to digital converters (TDCs) connected to 12800 single photon avalanche diodes (SPADs). Detailed measurements were performed to understand the low photon time response of the Philips digital SiPM. The single photon time resolution (SPTR) of every single SPAD in a pixel consisting of 3200 SPADs was measured and an average value of 85 ps full width at half maximum (FWHM) was observed. Each SPAD sends the signal to the TDC with different signal propagation time, resulting in a so called trigger network skew. This distribution of the trigger network skew for a pixel (3200 SPADs) has been measured and a variation of 50 ps FWHM was extracted. The SPTR of the whole pixel is the combination of SPAD jitter, trigger network skew, and the SPAD non-uniformity. The SPTR of a complete pixel was 103 ps FWHM at 3.3 V above breakdown voltage. Further, the effect of the crosstalk at a low photon level has been studied, with the two photon time resolution degrading if the events are a combination of detected (true) photons and crosstalk events. Finally, the time response to multiple photons was investigated.

A micron resolution optical scanner for characterization of silicon detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shukla, R. A.; Dugad, S. R., E-mail: dugad@cern.ch; Gopal, A. V.

2014-02-15

The emergence of high position resolution (∼10 μm) silicon detectors in recent times have highlighted the urgent need for the development of new automated optical scanners of micron level resolution suited for characterizing microscopic features of these detectors. More specifically, for the newly developed silicon photo-multipliers (SiPM) that are compact, possessing excellent photon detection efficiency with gain comparable to photo-multiplier tube. In a short time, since their invention the SiPMs are already being widely used in several high-energy physics and astrophysics experiments as the photon readout element. The SiPM is a high quantum efficiency, multi-pixel photon counting detector with fastmore » timing and high gain. The presence of a wide variety of photo sensitive silicon detectors with high spatial resolution requires their performance evaluation to be carried out by photon beams of very compact spot size. We have designed a high resolution optical scanner that provides a monochromatic focused beam on a target plane. The transverse size of the beam was measured by the knife-edge method to be 1.7 μm at 1 − σ level. Since the beam size was an order of magnitude smaller than the typical feature size of silicon detectors, this optical scanner can be used for selective excitation of these detectors. The design and operational details of the optical scanner, high precision programmed movement of target plane (0.1 μm) integrated with general purpose data acquisition system developed for recording static and transient response photo sensitive silicon detector are reported in this paper. Entire functionality of scanner is validated by using it for selective excitation of individual pixels in a SiPM and identifying response of active and dead regions within SiPM. Results from these studies are presented in this paper.« less

Study of current-mode active pixel sensor circuits using amorphous InSnZnO thin-film transistor for 50-μm pixel-pitch indirect X-ray imagers

NASA Astrophysics Data System (ADS)

Cheng, Mao-Hsun; Zhao, Chumin; Kanicki, Jerzy

2017-05-01

Current-mode active pixel sensor (C-APS) circuits based on amorphous indium-tin-zinc-oxide thin-film transistors (a-ITZO TFTs) are proposed for indirect X-ray imagers. The proposed C-APS circuits include a combination of a hydrogenated amorphous silicon (a-Si:H) p+-i-n+ photodiode (PD) and a-ITZO TFTs. Source-output (SO) and drain-output (DO) C-APS are investigated and compared. Acceptable signal linearity and high gains are realized for SO C-APS. APS circuit characteristics including voltage gain, charge gain, signal linearity, charge-to-current conversion gain, electron-to-voltage conversion gain are evaluated. The impact of the a-ITZO TFT threshold voltage shifts on C-APS is also considered. A layout for a pixel pitch of 50 μm and an associated fabrication process are suggested. Data line loadings for 4k-resolution X-ray imagers are computed and their impact on circuit performances is taken into consideration. Noise analysis is performed, showing a total input-referred noise of 239 e-.

Large Area Cd0.9Zn0.1Te Pixelated Detector: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Chaudhuri, Sandeep K.; Nguyen, Khai; Pak, Rahmi O.; Matei, Liviu; Buliga, Vladimir; Groza, Michael; Burger, Arnold; Mandal, Krishna C.

2014-04-01

Cd0.9Zn0.1Te (CZT) based pixelated radiation detectors have been fabricated and characterized for gamma ray detection. Large area CZT single crystals has been grown using a tellurium solvent method. A 10 ×10 guarded pixelated detector has been fabricated on a 19.5 ×19.5 ×5 mm3 crystal cut out from the grown ingot. The pixel dimensions were 1.3 ×1.3 mm2 and were pitched at 1.8 mm. A guard grid was used to reduce interpixel/inter-electrode leakage. The crystal was characterized in planar configuration using electrical, optical and optoelectronic methods prior to the fabrication of pixelated geometry. Current-voltage (I-V) measurements revealed a leakage current of 27 nA at an operating bias voltage of 1000 V and a resistivity of 3.1 ×1010 Ω-cm. Infrared transmission imaging revealed an average tellurium inclusion/precipitate size less than 8 μm. Pockels measurement has revealed a near-uniform depth-wise distribution of the internal electric field. The mobility-lifetime product in this crystal was calculated to be 6.2 ×10 - 3 cm2/V using alpha ray spectroscopic method. Gamma spectroscopy using a 137Cs source on the pixelated structure showed fully resolved 662 keV gamma peaks for all the pixels, with percentage resolution (FWHM) as high as 1.8%.

A New Attempt at Alkaline Texturization of Monocrystaline Silicon with Anionic Surfactant as the Additive

NASA Astrophysics Data System (ADS)

Li, Hailing; Wang, Wenjing; Zhao, Lei; Zhou, Chunlan; Diao, Hongwei

2012-10-01

Owing to the volatilization of isopropanol (IPA), instability in the alkaline texturization of monocrystalline silicon has been a big problem for a long time. Many additives were adapted to replace IPA, such as high boiling point alcohols. In this experiment, as a new attempt, sodium lauryl sulfate (SDS), a type of anionic surfactant, was used as the additive in NaOH solution. The etching properties of silicon in 2 wt % NaOH/15-30 mg/L SDS solution were analyzed. To improve the wettability of silicon, two types of metal salt, NaCl and Na2CO3 with concentration from 2 to 15 wt %, were applied to the 2 wt % NaOH/15 mg/L SDS solution. The results showed that the effect of NaCl was better than that of Na2CO3. Finally, the role of the additive was discussed.

iPadPix—A novel educational tool to visualise radioactivity measured by a hybrid pixel detector

NASA Astrophysics Data System (ADS)

Keller, O.; Schmeling, S.; Müller, A.; Benoit, M.

2016-11-01

With the ability to attribute signatures of ionising radiation to certain particle types, pixel detectors offer a unique advantage over the traditional use of Geiger-Müller tubes also in educational settings. We demonstrate in this work how a Timepix readout chip combined with a standard 300μm pixelated silicon sensor can be used to visualise radioactivity in real-time and by means of augmented reality. The chip family is the result of technology transfer from High Energy Physics at CERN and facilitated by the Medipix Collaboration. This article summarises the development of a prototype based on an iPad mini and open source software detailed in ref. [1]. Appropriate experimental activities that explore natural radioactivity and everyday objects are given to demonstrate the use of this new tool in educational settings.

A 64-pixel NbTiN superconducting nanowire single-photon detector array for spatially resolved photon detection.

PubMed

Miki, Shigehito; Yamashita, Taro; Wang, Zhen; Terai, Hirotaka

2014-04-07

We present the characterization of two-dimensionally arranged 64-pixel NbTiN superconducting nanowire single-photon detector (SSPD) array for spatially resolved photon detection. NbTiN films deposited on thermally oxidized Si substrates enabled the high-yield production of high-quality SSPD pixels, and all 64 SSPD pixels showed uniform superconducting characteristics within the small range of 7.19-7.23 K of superconducting transition temperature and 15.8-17.8 μA of superconducting switching current. Furthermore, all of the pixels showed single-photon sensitivity, and 60 of the 64 pixels showed a pulse generation probability higher than 90% after photon absorption. As a result of light irradiation from the single-mode optical fiber at different distances between the fiber tip and the active area, the variations of system detection efficiency (SDE) in each pixel showed reasonable Gaussian distribution to represent the spatial distributions of photon flux intensity.

Experimental single-chip color HDTV image acquisition system with 8M-pixel CMOS image sensor

NASA Astrophysics Data System (ADS)

Shimamoto, Hiroshi; Yamashita, Takayuki; Funatsu, Ryohei; Mitani, Kohji; Nojiri, Yuji

2006-02-01

We have developed an experimental single-chip color HDTV image acquisition system using 8M-pixel CMOS image sensor. The sensor has 3840 × 2160 effective pixels and is progressively scanned at 60 frames per second. We describe the color filter array and interpolation method to improve image quality with a high-pixel-count single-chip sensor. We also describe an experimental image acquisition system we used to measured spatial frequency characteristics in the horizontal direction. The results indicate good prospects for achieving a high quality single chip HDTV camera that reduces pseudo signals and maintains high spatial frequency characteristics within the frequency band for HDTV.

Charge amplitude distribution of the Gossip gaseous pixel detector

NASA Astrophysics Data System (ADS)

Blanco Carballo, V. M.; Chefdeville, M.; Colas, P.; Giomataris, Y.; van der Graaf, H.; Gromov, V.; Hartjes, F.; Kluit, R.; Koffeman, E.; Salm, C.; Schmitz, J.; Smits, S. M.; Timmermans, J.; Visschers, J. L.

2007-12-01

The Gossip gaseous pixel detector is being developed for the detection of charged particles in extreme high radiation environments as foreseen close to the interaction point of the proposed super LHC. The detecting medium is a thin layer of gas. Because of the low density of this medium, only a few primary electron/ion pairs are created by the traversing particle. To get a detectable signal, the electrons drift towards a perforated metal foil (Micromegas) whereafter they are multiplied in a gas avalanche to provide a detectable signal. The gas avalanche occurs in the high field between the Micromegas and the pixel readout chip (ROC). Compared to a silicon pixel detector, Gossip features a low material budget and a low cooling power. An experiment using X-rays has indicated a possible high radiation tolerance exceeding 10 16 hadrons/cm 2. The amplified charge signal has a broad amplitude distribution due to the limited statistics of the primary ionization and the statistical variation of the gas amplification. Therefore, some degree of inefficiency is inevitable. This study presents experimental results on the charge amplitude distribution for CO 2/DME (dimethyl-ether) and Ar/iC 4H 10 mixtures. The measured curves were fitted with the outcome of a theoretical model. In the model, the physical Landau distribution is approximated by a Poisson distribution that is convoluted with the variation of the gas gain and the electronic noise. The value for the fraction of pedestal events is used for a direct calculation of the cluster density. For some gases, the measured cluster density is considerably lower than given in literature.

Pixel-Level Digital-to-Analog Conversion Scheme with Compensation of Thin-Film-Transistor Variations for Compact Integrated Data Drivers of Active Matrix Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Kim, Tae-Wook; Park, Sang-Gyu; Choi, Byong-Deok

2011-03-01

The previous pixel-level digital-to-analog-conversion (DAC) scheme that implements a part of a DAC in a pixel circuit turned out to be very efficient for reducing the peripheral area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs). However, how the pixel-level DAC can be compatible with the existing pixel circuits including compensation schemes of TFT variations and IR drops on supply rails, which is of primary importance for active matrix organic light emitting diodes (AMOLEDs) is an issue in this scheme, because LTPS TFTs suffer from random variations in their characteristics. In this paper, we show that the pixel-level DAC scheme can be successfully used with the previous compensation schemes by giving two examples of voltage- and current-programming pixels. The previous pixel-level DAC schemes require additional two TFTs and one capacitor, but for these newly proposed pixel circuits, the overhead is no more than two TFTs by utilizing the already existing capacitor. In addition, through a detailed analysis, it has been shown that the pixel-level DAC can be expanded to a 4-bit resolution, or be applied together with 1:2 demultiplexing driving for 6- to 8-in. diagonal XGA AMOLED display panels.

Charge Resolution of the Silicon Matrix of the ATIC Experiment

NASA Technical Reports Server (NTRS)

Zatsepin, V. I.; Adams, J. H., Jr.; Ahn, H. S.; Bashindzhagyan, G. L.; Batkov, K. E.; Case, G.; Christl, M.; Ganel, O.; Fazely, A. R.; Ganel, O.;

Pixelation Effects in Weak Lensing

NASA Technical Reports Server (NTRS)

High, F. William; Rhodes, Jason; Massey, Richard; Ellis, Richard

2007-01-01

Weak gravitational lensing can be used to investigate both dark matter and dark energy but requires accurate measurements of the shapes of faint, distant galaxies. Such measurements are hindered by the finite resolution and pixel scale of digital cameras. We investigate the optimum choice of pixel scale for a space-based mission, using the engineering model and survey strategy of the proposed Supernova Acceleration Probe as a baseline. We do this by simulating realistic astronomical images containing a known input shear signal and then attempting to recover the signal using the Rhodes, Refregier, and Groth algorithm. We find that the quality of shear measurement is always improved by smaller pixels. However, in practice, telescopes are usually limited to a finite number of pixels and operational life span, so the total area of a survey increases with pixel size. We therefore fix the survey lifetime and the number of pixels in the focal plane while varying the pixel scale, thereby effectively varying the survey size. In a pure trade-off for image resolution versus survey area, we find that measurements of the matter power spectrum would have minimum statistical error with a pixel scale of 0.09' for a 0.14' FWHM point-spread function (PSF). The pixel scale could be increased to 0.16' if images dithered by exactly half-pixel offsets were always available. Some of our results do depend on our adopted shape measurement method and should be regarded as an upper limit: future pipelines may require smaller pixels to overcome systematic floors not yet accessible, and, in certain circumstances, measuring the shape of the PSF might be more difficult than those of galaxies. However, the relative trends in our analysis are robust, especially those of the surface density of resolved galaxies. Our approach thus provides a snapshot of potential in available technology, and a practical counterpart to analytic studies of pixelation, which necessarily assume an idealized shape

An All Silicon Feedhorn-Coupled Focal Plane for Cosmic Microwave Background Polarimetry

NASA Technical Reports Server (NTRS)

Hubmayr, J.; Appel, J. W.; Austermann, J. E.; Beall, J. A.; Becker, D.; Benson, B. A.; Bleem, L. E.; Carlstrom, J. E.; Chang, C. L.; Cho, H. M.;

Compounding with Silicones.

PubMed

Allen, Loyd V

2015-01-01

Since the 1940s, methylchlorosilanes have been used to treat glassware to prevent blood from clotting. The use of silicones in pharmaceutical and medical applications has grown to where today they are used in many life-saving devices (pacemakers, hydrocephalic shunts) and pharmaceutical applications from tubing, to excipients in topical formulations, to adhesives to affix transdermal drug delivery systems, and are also being used in products as active pharmaceutical ingredients, such as antiflatulents. About 60% of today's skin-care products now contain some type of silicone where they are considered safe and are known to provide a pleasant "silky-touch," non-greasy, and non-staining feel. Silicones exhibit many useful characteristics, and the safety of these agents supports their numerous applications; their biocompatibility is partially due to their low-chemical reactivity displayed by silicones, low-surface energy, and their hydrophobicity. Silicones are used both as active ingredients and as excipients. In addition is their use for "siliconization," or surface treatment, of many parenteral packaging components. Dimethicone and silicone oil are used as lubricants on stoppers to aid machineability, in syringes to aid piston movement, or on syringe needles to reduce pain upon injection. Silicones are also useful in pharmaceutical compounding as is discussed in this artiele included with this article are in developing formulations with silicones.

Pixel-by-pixel absolute phase retrieval using three phase-shifted fringe patterns without markers

NASA Astrophysics Data System (ADS)

Jiang, Chufan; Li, Beiwen; Zhang, Song

2017-04-01

This paper presents a method that can recover absolute phase pixel by pixel without embedding markers on three phase-shifted fringe patterns, acquiring additional images, or introducing additional hardware component(s). The proposed three-dimensional (3D) absolute shape measurement technique includes the following major steps: (1) segment the measured object into different regions using rough priori knowledge of surface geometry; (2) artificially create phase maps at different z planes using geometric constraints of structured light system; (3) unwrap the phase pixel by pixel for each region by properly referring to the artificially created phase map; and (4) merge unwrapped phases from all regions into a complete absolute phase map for 3D reconstruction. We demonstrate that conventional three-step phase-shifted fringe patterns can be used to create absolute phase map pixel by pixel even for large depth range objects. We have successfully implemented our proposed computational framework to achieve absolute 3D shape measurement at 40 Hz.

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

NASA Astrophysics Data System (ADS)

Veale, M. C.; Adkin, P.; Booker, P.; Coughlan, J.; French, M. J.; Hart, M.; Nicholls, T.; Schneider, A.; Seller, P.; Pape, I.; Sawhney, K.; Carini, G. A.; Hart, P. A.

2017-12-01

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 105 12 keV photons per image readout at 4.5 MHz. In this paper results from the testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. The performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.

Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2011-08-15

An ultracompact integrated silicide Schottky barrier detector (SBD) is designed and theoretically investigated to electrically detect the surface plasmon polariton (SPP) propagating along horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguides at the telecommunication wavelength of 1550 nm. An ultrathin silicide layer inserted between the silicon core and the insulator, which can be fabricated precisely using the well-developed self-aligned silicide process, absorbs the SPP power effectively if a suitable silicide is chosen. Moreover, the Schottky barrier height in the silicide-silicon-silicide configuration can be tuned substantially by the external voltage through the Schottky effect owing to the very narrow silicon core. For a TaSi(2) detector with optimized dimensions, numerical simulation predicts responsivity of ~0.07 A/W, speed of ~60 GHz, dark current of ~66 nA at room temperature, and minimum detectable power of ~-29 dBm. The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used. © 2011 Optical Society of America

Charge Loss and Charge Sharing Measurements for Two Different Pixelated Cadmium-Zinc-Telluride Detectors

NASA Technical Reports Server (NTRS)

Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

2003-01-01

As part of ongoing research at Marshall Space Flight Center, Cadmium-Zinc- Telluride (CdZnTe) pixilated detectors are being developed for use at the focal plane of the High Energy Replicated Optics (HERO) telescope. HERO requires a 64x64 pixel array with a spatial resolution of around 200 microns (with a 6m focal length) and high energy resolution (< 2% at 60keV). We are currently testing smaller arrays as a necessary first step towards this goal. In this presentation, we compare charge sharing and charge loss measurements between two devices that differ both electronically and geometrically. The first device consists of a 1-mm-thick piece of CdZnTe that is sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). The signal is read out using discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe that is sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). Instead of using discrete preamplifiers, the crystal is bonded to an ASIC that provides all of the front-end electronics to each of the 256 pixels. what degree the bias voltage (i.e. the electric field) and hence the drift and diffusion coefficients affect our measurements. Further, we compare the measured results with simulated results and discuss to

How many pixels does it take to make a good 4"×6" print? Pixel count wars revisited

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

2011-01-01

In the early 1980's the future of conventional silver-halide photographic systems was of great concern due to the potential introduction of electronic imaging systems then typified by the Sony Mavica analog electronic camera. The focus was on the quality of film-based systems as expressed in the number of equivalent number pixels and bits-per-pixel, and how many pixels would be required to create an equivalent quality image from a digital camera. It was found that 35-mm frames, for ISO 100 color negative film, contained equivalent pixels of 12 microns for a total of 18 million pixels per frame (6 million pixels per layer) with about 6 bits of information per pixel; the introduction of new emulsion technology, tabular AgX grains, increased the value to 8 bit per pixel. Higher ISO speed films had larger equivalent pixels, fewer pixels per frame, but retained the 8 bits per pixel. Further work found that a high quality 3.5" x 5.25" print could be obtained from a three layer system containing 1300 x 1950 pixels per layer or about 7.6 million pixels in all. In short, it became clear that when a digital camera contained about 6 million pixels (in a single layer using a color filter array and appropriate image processing) that digital systems would challenge and replace conventional film-based system for the consumer market. By 2005 this became the reality. Since 2005 there has been a "pixel war" raging amongst digital camera makers. The question arises about just how many pixels are required and are all pixels equal? This paper will provide a practical look at how many pixels are needed for a good print based on the form factor of the sensor (sensor size) and the effective optical modulation transfer function (optical spread function) of the camera lens. Is it better to have 16 million, 5.7-micron pixels or 6 million 7.8-micron pixels? How does intrinsic (no electronic boost) ISO speed and exposure latitude vary with pixel size? A systematic review of these issues will

High-speed single-pixel digital holography

NASA Astrophysics Data System (ADS)

González, Humberto; Martínez-León, Lluís.; Soldevila, Fernando; Araiza-Esquivel, Ma.; Tajahuerce, Enrique; Lancis, Jesús

2017-06-01

The complete phase and amplitude information of biological specimens can be easily determined by phase-shifting digital holography. Spatial light modulators (SLMs) based on liquid crystal technology, with a frame-rate around 60 Hz, have been employed in digital holography. In contrast, digital micro-mirror devices (DMDs) can reach frame rates up to 22 kHz. A method proposed by Lee to design computer generated holograms (CGHs) permits the use of such binary amplitude modulators as phase-modulation devices. Single-pixel imaging techniques record images by sampling the object with a sequence of micro-structured light patterns and using a simple photodetector. Our group has reported some approaches combining single-pixel imaging and phase-shifting digital holography. In this communication, we review these techniques and present the possibility of a high-speed single-pixel phase-shifting digital holography system with phase-encoded illumination. This system is based on a Mach-Zehnder interferometer, with a DMD acting as the modulator for projecting the sampling patterns on the object and also being used for phase-shifting. The proposed sampling functions are phaseencoded Hadamard patterns generated through a Lee hologram approach. The method allows the recording of the complex amplitude distribution of an object at high speed on account of the high frame rates of the DMD. Reconstruction may take just a few seconds. Besides, the optical setup is envisaged as a true adaptive system, which is able to measure the aberration induced by the optical system in the absence of a sample object, and then to compensate the wavefront in the phasemodulation stage.

Development of pixellated Ir-TESs

NASA Astrophysics Data System (ADS)

Zen, Nobuyuki; Takahashi, Hiroyuki; Kunieda, Yuichi; Damayanthi, Rathnayaka M. T.; Mori, Fumiakira; Fujita, Kaoru; Nakazawa, Masaharu; Fukuda, Daiji; Ohkubo, Masataka

2006-04-01

We have been developing Ir-based pixellated superconducting transition edge sensors (TESs). In the area of material or astronomical applications, the sensor with few eV energy resolution and over 1000 pixels imaging property is desired. In order to achieve this goal, we have been analyzing signals from pixellated TESs. In the case of a 20 pixel array of Ir-TESs, with 45 μm×45 μm pixel sizes, the incident X-ray signals have been classified into 16 groups. We have applied numerical signal analysis. On the one hand, the energy resolution of our pixellated TES is strongly degraded. However, using pulse shape analysis, we can dramatically improve the resolution. Thus, we consider that the pulse signal analysis will lead this device to be used as a practical photon incident position identifying TES.

Investigation of CMOS pixel sensor with 0.18 μm CMOS technology for high-precision tracking detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Fu, M.; Zhang, Y.; Yan, W.; Wang, M.

2017-01-01

The Circular Electron Positron Collider (CEPC) proposed by the Chinese high energy physics community is aiming to measure Higgs particles and their interactions precisely. The tracking detector including Silicon Inner Tracker (SIT) and Forward Tracking Disks (FTD) has driven stringent requirements on sensor technologies in term of spatial resolution, power consumption and readout speed. CMOS Pixel Sensor (CPS) is a promising candidate to approach these requirements. This paper presents the preliminary studies on the sensor optimization for tracking detector to achieve high collection efficiency while keeping necessary spatial resolution. Detailed studies have been performed on the charge collection using a 0.18 μm CMOS image sensor process. This process allows high resistivity epitaxial layer, leading to a significant improvement on the charge collection and therefore improving the radiation tolerance. Together with the simulation results, the first exploratory prototype has bee designed and fabricated. The prototype includes 9 different pixel arrays, which vary in terms of pixel pitch, diode size and geometry. The total area of the prototype amounts to 2 × 7.88 mm2.

Design and Fabrication of Electrostatically Actuated Silicon Microshutters Arrays

NASA Technical Reports Server (NTRS)

Oh, L.; Li, M.; Kim, K.; Kelly, D.; Kutyrev, A.; Moseley, S.

2017-01-01

We have developed a new fabrication process to actuate microshutter arrays (MSA) electrostatically at NASA Goddard Space Flight Center. The microshutters are fabricated on silicon with thin silicon nitride membranes. A pixel size of each microshutter is 100 x 200 micrometers 2. The microshutters rotate 90 degrees on torsion bars. The selected microshutters are actuated, held, and addressed electrostatically by applying voltages on the electrodes the front and back sides of the microshutters. The atomic layer deposition (ALD) of aluminum oxide was used to insulate electrodes on the back side of walls; the insulation can withstand over 100 V. The ALD aluminum oxide is dry etched, and then the microshutters are released in vapor HF.

Pixel-by-Pixel SED Fitting of Intermediate Redshift Galaxies

NASA Astrophysics Data System (ADS)

Cohen, Seth H.; Kim, Hwihyun; Petty, Sara M.; Farrah, Duncan

2015-01-01

We select intermediate redshift galaxies from the Hubble Space Telescope CANDELS and GOODS surveys to study their stellar populations on sub-kilo-parsec scales by fitting SED models on a pixel-by-pixel basis. Galaxies are chosen to have measured spectroscopic redshifts (z<1.5), to be bright (H_AB<21 mag), to be relatively face-on (b/a > 0.6), and have a minimum of ten individual resolution elements across the face of the galaxy, as defined by the broadest PSF (F160W-band) in the data. The sample contains ~200 galaxies with BViz(Y)JH band HST photometry. The main goal of the study is to better understand the effects of population blending when using a pixel-by-pixel SED fitting (pSED) approach. We outline our pSED fitting method which gives maps of stellar mass, age, star-formation rate, etc. Several examples of individual pSED-fit maps are presented in detail, as well as some preliminary results on the full sample. The pSED method is necessarily biased by the brightest population in a given pixel outshining the rest of the stars, and, therefore, we intend to study this apparent population blending in a set of artificially redshifted images of nearby galaxies, for which we have star-by-star measurements of their stellar populations. This local sample will be used to better interpret the measurements for the higher redshift galaxies.Based on observations made with the NASA/ESA Hubble Space Telescope, obtained from the Data Archive at the Space Telescope Science Institute, which is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS 5-26555. This archival research is associated with program #13241.

Low complexity pixel-based halftone detection

NASA Astrophysics Data System (ADS)

Ok, Jiheon; Han, Seong Wook; Jarno, Mielikainen; Lee, Chulhee

2011-10-01

With the rapid advances of the internet and other multimedia technologies, the digital document market has been growing steadily. Since most digital images use halftone technologies, quality degradation occurs when one tries to scan and reprint them. Therefore, it is necessary to extract the halftone areas to produce high quality printing. In this paper, we propose a low complexity pixel-based halftone detection algorithm. For each pixel, we considered a surrounding block. If the block contained any flat background regions, text, thin lines, or continuous or non-homogeneous regions, the pixel was classified as a non-halftone pixel. After excluding those non-halftone pixels, the remaining pixels were considered to be halftone pixels. Finally, documents were classified as pictures or photo documents by calculating the halftone pixel ratio. The proposed algorithm proved to be memory-efficient and required low computation costs. The proposed algorithm was easily implemented using GPU.

The Silicon Matrix as a Charge Detector in the ATIC Experiment

NASA Technical Reports Server (NTRS)

Zatsepin, V. I.; Adams, J. H.; Ahn, H. S.; Bashindzhagyan, G. L.; Batkov, K. E.; Chang, J.; Christl, M.; Fazely, A. R.; Ganel, O.; Gunasingha, R. M.

2004-01-01

The Advanced Thin Ionization Calorimeter (ATIC) was built for series of long- duration balloon flights in Antarctica. Its main goal is to measure energy spectra of cosmic ray nuclei from protons up to iron nuclei over a wide energy range from 30 GeV up to 100 TeV. The ATIC balloon experiment had its first, test flight that lasted for 16 days from 28 Dec 2000 to 13 Jan 2OO1 around the continent. The ATIC spectrometer consists of a fully active BGO calorimeter, scintillator hodoscopes and a silicon matrix. The silicon matrix, consisting of 4480 pixels, was used as a charge detector in the experiment. About 25 million cosmic ray events were detected during the flight. In the paper, the charge spectrum obtained with the silicon matrix is analyzed.

Full-disk magnetograms obtained with a Na magneto-optical filter at the Mount Wilson Observatory

NASA Technical Reports Server (NTRS)

Rhodes, Edward J., Jr.; Cacciani, Alessandro; Garneau, Glenn; Misch, Tony; Progovac, Dusan; Shieber, Tom; Tomczyk, Steve; Ulrich, Roger K.

1988-01-01

The first full-disk magnetograms to be obtained with the Na magneto-optical filter (MOF) which is located at the 60 foot solar tower of the Mount Wilson Observatory are presented. This MOF was employed as a longitudinal magnetograph on June 18, 19, and July 1, 1987. On those three days the MOF was combined with a large format (1024 x 1024 pixel) virtual phase change coupled device camera and a high-speed data acquisition system. The combined system was used to record both line-of-sight magnetograms and Dopplergrams which covered the entire visible solar hemisphere. The pixel size of these magnetograms and Dopplergrams was 2.3 arcseconds. On each of the three days a time series of nine pairs of magnetograms and Dopplergrams was obtained at the rate of one pair every two minutes. On the same three day longitudinal magnetograms have one arcsecond pixels were obtained with the vacuum telescope at Kitt Peak. The MOF and vacuum tower magnetograms were compared at both the JPL Multi-Mission Image Processing Laboratory and at USC and have found the two sets of images to be well correlated both in spatial distribution and strength of the measured magnetic field. The simultaneously-obtained MOF Dopplergrams to remove the crosstalk which was present between the Doppler and Zeeman shifts of the NaD lines from the magnetograms from all three days and will also describe recent improvements to the system which allowed the obtaining of full-disk magnetograms as rapidly as one every 25 seconds.

Amorphous In-Ga-Zn-O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays

NASA Astrophysics Data System (ADS)

Chen, Charlene; Abe, Katsumi; Fung, Tze-Ching; Kumomi, Hideya; Kanicki, Jerzy

2009-03-01

In this paper, we analyze application of amorphous In-Ga-Zn-O thin film transistors (a-InGaZnO TFTs) to current-scaling pixel electrode circuit that could be used for 3-in. quarter video graphics array (QVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compare to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-InGaZnO TFT pixel circuit can compensate for the drive TFT threshold voltage variation (ΔVT) within acceptable operating error range.

Pixelated Geiger-Mode Avalanche Photo-Diode Characterization Through Dark Current Measurement

NASA Astrophysics Data System (ADS)

Amaudruz, Pierre-Andre; Bishop, Daryl; Gilhully, Colleen; Goertzen, Andrew; James, Lloyd; Kozlowski, Piotr; Retiere, Fabrice; Shams, Ehsan; Sossi, Vesna; Stortz, Greg; Thiessen, Jonathan D.; Thompson, Christopher J.

2014-06-01

PIXELATED geiger-mode avalanche photodiodes (PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic physics experiments, which requires extensive test and operation procedures in order to achieve uniform responses from all the devices. In this paper, we show for two PPD brands, Hamamatsu MPPC and SensL SPM, that at room temperature, the dark noise rate, breakdown voltage and rate of correlated avalanches can be inferred from the sole measure of dark current as a function of operating voltage, hence greatly simplifying the characterization procedure. We introduce a custom electronics system that allows measurement for many devices concurrently, hence allowing rapid testing and monitoring of many devices at low cost. Finally, we show that the dark current of Hamamastu Multi-Pixel Photon Counter (MPPC) is rather independent of temperature at constant operating voltage, hence the current measure cannot be used to probe temperature variations. On the other hand, the MPPC current can be used to monitor light source conditions in DC mode without requiring strong temperature stability, as long as the integrated source brightness is comparable to the dark noise rate.

PantherPix hybrid pixel γ-ray detector for radio-therapeutic applications

NASA Astrophysics Data System (ADS)

Neue, G.; Benka, T.; Havránek, M.; Hejtmánek, M.; Janoška, Z.; Kafka, V.; Korchak, O.; Lednický, D.; Marčišovská, M.; Marčišovský, M.; Popule, J.; Şmarhák, J.; Şvihra, P.; Tomášek, L.; Vrba, V.; Konček, O.; Semmler, M.

2018-02-01

This work focuses on the design of a semiconductor pixelated γ-ray camera with a pixel size of 1 mm2. The cost of semiconductor manufacturing is mainly driven by economies of scale, which makes silicon the cheapest semiconductor material due to its widespread utilization. The energy of γ-photons used in radiation therapy are in a range, in which the dominant interaction mechanism is Compton scattering in every conceivable sensor material. Since the Compton scattering cross section is linearly dependent upon Z, it is less rewarding to utilize high Z sensor materials, than it is in the case of X-ray detectors (X-rays interact also via the photoelectric effect whose cross section scales proportional to Zn, where n is ≈ 4,5). For the stated reasons it was decided to use the low Z material silicon (Z = 14) despite its worse detection efficiency. The proposed detector is designed as a portal detector to be used in radiation cancer therapy. The purpose of the detector is to ensure correct patient alignment, spatial dose monitoring and to provide the feedback necessary for an emergency shutdown should the spatial dose rate profile deviate from the treatment plan. Radiation therapy equipment is complex and thus failure prone and the consequences of malfunction are often life threatening. High spatial resolution and high detection efficiency are not a high design priority. The detector design priorities are focused up on radiation hardness, robustness and the ability to cover a large area cost efficiently. The quintessential idea of the PanterPix detector exploits the relaxed spatial resolution requirement to achieve the stated goals. The detector is composed of submodules, each submodule consisting of a Si sensor with an array of fully depleted detection diodes and 8 miniature custom design readout ASICs collecting and measuring the minuscule charge packets generated due to ionization in the PN junctions.

Pixel CdTe semiconductor module to implement a sub-MeV imaging detector for astrophysics

NASA Astrophysics Data System (ADS)

Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Álvarez, J.-M.; Ullán, M.; Pellegrini, G.; Lozano, M.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

2017-03-01

Stellar explosions are relevant and interesting astrophysical phenomena. Since long ago we have been working on the characterization of nova and supernova explosions in X and gamma rays, with the use of space missions such as INTEGRAL, XMM-Newton and Swift. We have been also involved in feasibility studies of future instruments in the energy range from several keV up to a few MeV, in collaboration with other research institutes, such as GRI, DUAL and e-ASTROGAM. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae, Classical Novae, Supernova Remnants (SNRs), Gamma-Ray Bursts (GRBs). In order to fulfil the combined requirement of high detection efficiency with good spatial and energy resolution, an initial module prototype based on CdTe pixel detectors is being developed. The detector dimensions are 12.5mm x 12.5mm x 2mm, with a pixel pitch of 1mm x 1mm. Each pixel is bump bonded to a fanout board made of Sapphire substrate and routed to the corresponding input channel of the readout ASIC, to measure pixel position and pulse height for each incident gamma-ray photon. An ohmic CdTe pixel detector has been characterised by means of 57Co, 133Ba and 22Na sources. Based on this, its spectroscopic performance and the influence of charge sharing is reported here. The pixel study is complemented by the simulation of the CdTe module performance using the GEANT 4 and MEGALIB tools, which will help us to optimise the pixel size selection.

4D tracking with ultra-fast silicon detectors

NASA Astrophysics Data System (ADS)

F-W Sadrozinski, Hartmut; Seiden, Abraham; Cartiglia, Nicolò

2018-02-01

The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments. Nowadays, silicon detectors are ubiquitous not only in research laboratories but in almost every high-tech apparatus, from portable phones to hospitals. In this contribution, we present a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information. This enhancement of the present silicon detector paradigm is enabled by the inclusion of controlled low gain in the detector response, therefore increasing the detector output signal sufficiently to make timing measurement possible. After providing a short overview of the advantage of this new technology, we present the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4D tracking. In the last section, we present the experimental results, demonstrating the validity of our research path.

Development of n+-in-p planar pixel sensors for extremely high radiation environments, designed to retain high efficiency after irradiation

NASA Astrophysics Data System (ADS)

Unno, Y.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Hanagaki, K.; Yajima, K.; Yamauchi, Y.; Hirose, M.; Homma, Y.; Jinnouchi, O.; Kimura, K.; Motohashi, K.; Sato, S.; Sawai, H.; Todome, K.; Yamaguchi, D.; Hara, K.; Sato, Kz.; Sato, Kj.; Hagihara, M.; Iwabuchi, S.

2016-09-01

We have developed n+-in-p pixel sensors to obtain highly radiation tolerant sensors for extremely high radiation environments such as those found at the high-luminosity LHC. We have designed novel pixel structures to eliminate the sources of efficiency loss under the bias rails after irradiation by removing the bias rail out of the boundary region and routing the bias resistors inside the area of the pixel electrodes. After irradiation by protons with the fluence of approximately 3 ×1015neq /cm2, the pixel structure with the polysilicon bias resistor and the bias rails removed far away from the boundary shows an efficiency loss of < 0.5 % per pixel at the boundary region, which is as efficient as the pixel structure without a biasing structure. The pixel structure with the bias rails at the boundary and the widened p-stop's underneath the bias rail also exhibits an improved loss of approximately 1% per pixel at the boundary region. We have elucidated the physical mechanisms behind the efficiency loss under the bias rail with TCAD simulations. The efficiency loss is due to the interplay of the bias rail acting as a charge collecting electrode with the region of low electric field in the silicon near the surface at the boundary. The region acts as a "shield" for the electrode. After irradiation, the strong applied electric field nearly eliminates the region. The TCAD simulations have shown that wide p-stop and large Si-SiO2 interface charge (inversion layer, specifically) act to shield the weighting potential. The pixel sensor of the old design irradiated by γ-rays at 2.4 MGy is confirmed to exhibit only a slight efficiency loss at the boundary.

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

DOE PAGES

Veale, M. C.; Adkin, P.; Booker, P.; ...

2017-12-04

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 10 5 12 keV photons per image readout at 4.5 MHz. In this paper results from themore » testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. As a result, the performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.« less

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veale, M. C.; Adkin, P.; Booker, P.

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 10 5 12 keV photons per image readout at 4.5 MHz. In this paper results from themore » testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. As a result, the performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.« less

Angular sensitivity of modeled scientific silicon charge-coupled devices to initial electron direction

NASA Astrophysics Data System (ADS)

Plimley, Brian; Coffer, Amy; Zhang, Yigong; Vetter, Kai

2016-08-01

Previously, scientific silicon charge-coupled devices (CCDs) with 10.5-μm pixel pitch and a thick (650 μm), fully depleted bulk have been used to measure gamma-ray-induced fast electrons and demonstrate electron track Compton imaging. A model of the response of this CCD was also developed and benchmarked to experiment using Monte Carlo electron tracks. We now examine the trade-off in pixel pitch and electronic noise. We extend our CCD response model to different pixel pitch and readout noise per pixel, including pixel pitch of 2.5 μm, 5 μm, 10.5 μm, 20 μm, and 40 μm, and readout noise from 0 eV/pixel to 2 keV/pixel for 10.5 μm pixel pitch. The CCD images generated by this model using simulated electron tracks are processed by our trajectory reconstruction algorithm. The performance of the reconstruction algorithm defines the expected angular sensitivity as a function of electron energy, CCD pixel pitch, and readout noise per pixel. Results show that our existing pixel pitch of 10.5 μm is near optimal for our approach, because smaller pixels add little new information but are subject to greater statistical noise. In addition, we measured the readout noise per pixel for two different device temperatures in order to estimate the effect of temperature on the reconstruction algorithm performance, although the readout is not optimized for higher temperatures. The noise in our device at 240 K increases the FWHM of angular measurement error by no more than a factor of 2, from 26° to 49° FWHM for electrons between 425 keV and 480 keV. Therefore, a CCD could be used for electron-track-based imaging in a Peltier-cooled device.

The Cryogenic Anti-Coincidence detector for ATHENA X-IFU: pulse analysis of the AC-S7 single pixel prototype

NASA Astrophysics Data System (ADS)

D'Andrea, M.; Argan, A.; Lotti, S.; Macculi, C.; Piro, L.; Biasotti, M.; Corsini, D.; Gatti, F.; Torrioli, G.

2016-07-01

The ATHENA observatory is the second large-class mission in ESA Cosmic Vision 2015-2025, with a launch foreseen in 2028 towards the L2 orbit. The mission addresses the science theme "The Hot and Energetic Universe", by coupling a high-performance X-ray Telescope with two complementary focal-plane instruments. One of these is the X-ray Integral Field Unit (X-IFU): it is a TES based kilo-pixel order array able to provide spatially resolved high-resolution spectroscopy (2.5 eV at 6 keV) over a 5 arcmin FoV. The X-IFU sensitivity is degraded by the particles background expected at L2 orbit, which is induced by primary protons of both galactic and solar origin, and mostly by secondary electrons. To reduce the background level and enable the mission science goals, a Cryogenic Anticoincidence (CryoAC) detector is placed < 1 mm below the TES array. It is a 4- pixel TES based detector, with wide Silicon absorbers sensed by Ir:Au TESes. The CryoAC development schedule foresees by Q1 2017 the delivery of a Demonstration Model (DM) to the X-IFU FPA development team. The DM is a single-pixel detector that will address the final design of the CryoAC. It will verify some representative requirements at single-pixel level, especially the detector operation at 50 mK thermal bath and the threshold energy at 20 keV. To reach the final DM design we have developed and tested the AC-S7 prototype, with 1 cm2 absorber area sensed by 65 Ir TESes. Here we will discuss the pulse analysis of this detector, which has been illuminated by the 60 keV line from a 241Am source. First, we will present the analysis performed to investigate pulses timings and spectrum, and to disentangle the athermal component of the pulses from the thermal one. Furthermore, we will show the application to our dataset of an alternative method of pulse processing, based upon Principal Component Analysis (PCA). This kind of analysis allow us to recover better energy spectra than achievable with traditional methods

Optimizing Floating Guard Ring Designs for FASPAX N-in-P Silicon Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Kyung-Wook; Bradford, Robert; Lipton, Ronald

2016-10-06

FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intendedmore » $$\\mbox{13 $$MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $$10^{\\text{5}}$$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.« less

Silicon production process evaluations

NASA Technical Reports Server (NTRS)

1981-01-01

The chemical engineering analysis of the preliminary process design of a process for producing solar cell grade silicon from dichlorosilane is presented. A plant to produce 1,000 MT/yr of silicon is analyzed. Progress and status for the plant design are reported for the primary activities of base case conditions (60 percent), reaction chemistry (50 percent), process flow diagram (35 percent), energy balance (10 percent), property data (10 percent) and equipment design (5 percent).

A low-noise wide-dynamic-range event-driven detector using SOI pixel technology for high-energy particle imaging

NASA Astrophysics Data System (ADS)

Shrestha, Sumeet; Kamehama, Hiroki; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

2015-08-01

This paper presents a low-noise wide-dynamic-range pixel design for a high-energy particle detector in astronomical applications. A silicon on insulator (SOI) based detector is used for the detection of wide energy range of high energy particles (mainly for X-ray). The sensor has a thin layer of SOI CMOS readout circuitry and a thick layer of high-resistivity detector vertically stacked in a single chip. Pixel circuits are divided into two parts; signal sensing circuit and event detection circuit. The event detection circuit consisting of a comparator and logic circuits which detect the incidence of high energy particle categorizes the incident photon it into two energy groups using an appropriate energy threshold and generate a two-bit code for an event and energy level. The code for energy level is then used for selection of the gain of the in-pixel amplifier for the detected signal, providing a function of high-dynamic-range signal measurement. The two-bit code for the event and energy level is scanned in the event scanning block and the signals from the hit pixels only are read out. The variable-gain in-pixel amplifier uses a continuous integrator and integration-time control for the variable gain. The proposed design allows the small signal detection and wide dynamic range due to the adaptive gain technique and capability of correlated double sampling (CDS) technique of kTC noise canceling of the charge detector.

Fiber pixelated image database

NASA Astrophysics Data System (ADS)

Shinde, Anant; Perinchery, Sandeep Menon; Matham, Murukeshan Vadakke

2016-08-01

Imaging of physically inaccessible parts of the body such as the colon at micron-level resolution is highly important in diagnostic medical imaging. Though flexible endoscopes based on the imaging fiber bundle are used for such diagnostic procedures, their inherent honeycomb-like structure creates fiber pixelation effects. This impedes the observer from perceiving the information from an image captured and hinders the direct use of image processing and machine intelligence techniques on the recorded signal. Significant efforts have been made by researchers in the recent past in the development and implementation of pixelation removal techniques. However, researchers have often used their own set of images without making source data available which subdued their usage and adaptability universally. A database of pixelated images is the current requirement to meet the growing diagnostic needs in the healthcare arena. An innovative fiber pixelated image database is presented, which consists of pixelated images that are synthetically generated and experimentally acquired. Sample space encompasses test patterns of different scales, sizes, and shapes. It is envisaged that this proposed database will alleviate the current limitations associated with relevant research and development and would be of great help for researchers working on comb structure removal algorithms.

High density pixel array

NASA Technical Reports Server (NTRS)

McFall, James Earl (Inventor); Wiener-Avnear, Eliezer (Inventor)

2004-01-01

A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim Farah, Fahim Farah; Deptuch, Grzegorz W.; Hoff, James R.

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array withoutmore » any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.« less

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

Growth of binary organic NLO crystals: m.NA-p.NA and m.NA-CNA system

NASA Technical Reports Server (NTRS)

Singh, N. B.; Henningsen, T.; Hopkins, R. H.; Mazelsky, R.

1993-01-01

Experiments were carried out to grow 3.Nitroaniline (m.NA) crystals doped with 4.Nitroaniline (p.NA) and 2.chloro 4.Nitroaniline (CNA). The measured undercooling for m.NA, p.NA, and CNA were 0.21 tm K, 0.23 tm K, and 0.35 tm K respectively, where tm represents the melting temperature of the pure component. Because of the crystals' large heat of fusion and large undercooling, it was not possible to grow good quality crystals with low thermal gradients. In the conventional two-zone Bridgman furnace we had to raise the temperature of the hot zone above the decomposition temperature of CNA, p.NA, and m.NA to achieve the desired thermal gradient. To avoid decomposition, we used an unconventional Bridgman furnace. Two immiscible liquids, silicone oil and ethylene glycol, were used to build a special two-zone Bridgman furnace. A temperature gradient of 18 K/cm was achieved without exceeding the decomposition temperature of the crystal. The binary crystals, m.NA-p.NA and m.NA-CNA, were grown in centimeter size in this furnace. X-ray and optical characterization showed good optical quality.

Method of preparing silicon from sodium fluosilicate

DOEpatents

Schmidt, Frederick A.; Rehbein, David; Chiotti, Premo

1984-01-01

A process for preparing high purity silicon metal from Na.sub.2 SiF.sub.6 (sodium fluosilicate). The sodium fluosilicate is heated to decomposition temperature to form NaF, which retains most of the impurities, and gaseous SiF.sub.4. The SiF.sub.4 is then reduced by the bomb reduction method using a reductant having a low packing density.

Thermal (Silicon Diode) Data Acquisition Systems

NASA Technical Reports Server (NTRS)

Wright, Ernest; Kegley, Jeff

2008-01-01

Marshall Space Flight Center s X-ray Cryogenic Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

Thermal (Silicon Diode) Data Acquisition System

NASA Technical Reports Server (NTRS)

Kegley, Jeffrey

2008-01-01

Marshall Space Flight Center's X-ray Calibration Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

Rad-hard Dual-threshold High-count-rate Silicon Pixel-array Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Adam

In this program, a Voxtel-led team demonstrates a full-format (192 x 192, 100-µm pitch, VX-810) high-dynamic-range x-ray photon-counting sensor—the Dual Photon Resolved Energy Acquisition (DUPREA) sensor. Within the Phase II program the following tasks were completed: 1) system analysis and definition of the DUPREA sensor requirements; 2) design, simulation, and fabrication of the full-format VX-810 ROIC design; 3) design, optimization, and fabrication of thick, fully depleted silicon photodiodes optimized for x-ray photon collection; 4) hybridization of the VX-810 ROIC to the photodiode array in the creation of the optically sensitive focal-plane array; 5) development of an evaluation camera; and 6)more » electrical and optical characterization of the sensor.« less

Sensors for the CMS Forward Pixel Phase 1 Upgrade

NASA Astrophysics Data System (ADS)

Dilsiz, Kamuran; CMS Collaboration

2016-03-01

The next incarnation of the CMS forward pixel detector, to be installed during the year end extended technical stop 2016-17, will need to survive an integrated luminosity of 300 fb-1 with the inner radius of the active region of the disks decreasing from 6 to 4.5 cm. Based on the Run 1 experience and irradiation studies, the Phase 1 FPIX sensors will again be n-on-n DOFZ silicon, with parameters similar to those in the present run. We will review the design choices including a study during the prototyping phase to explore different p-stop layouts. Results from the quality assurance probing of the full production of sensor wafers will be described. The IV measurements are particularly impressive with current densities in range of 3-4 nA/cm2 at the full depletion voltage.

Solar silicon via the Dow Corning process

NASA Technical Reports Server (NTRS)

Hunt, L. P.; Dosaj, V. D.

1979-01-01

Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz. This silicon was then purified to solar grade by impurity segregation during Czochralski crystal growth. Commercially available raw materials were used to produce 100 kg quantities of silicon during 60 hour periods in a direct arc reactor. This silicon produced single crystalline ingot, during a second Czochralski pull, that was fabricated into solar cells having efficiencies ranging from 8.2 percent to greater than 14 percent. An energy analysis of the entire process indicated a 5 month payback time.

[Effect of silicon on translocation and morphology distribution of lead in soil-tobacco system].

PubMed

Yan, Yi-Hua; Zheng, Zi-Cheng; Li, Ting-Xuan; Zhang, Xi-Zhou; Wang, Yong

2014-10-01

Taking tobacco as test material, a pot experiment was conducted to study the effect of silicon on translocation of lead (Pb) form soil to tobacco in order to explore effective measures for reducing Pb concentration in tobacco leaf. The results showed that silicon application promoted the transformation of exchangeable Pb into Fe-Mn oxide-bound Pb in non-rhizospheric soil, and into Fe-Mn oxide-bound Pb and residual Pb in rhizospheric soil, which decreased the availability and mobility of Pb in the soil. Silicon application significantly reduced the Pb uptake of tobacco, with the content of Pb being decreased by 6.5% to 44.0% in tobacco, and 3.1% to 60.4% in leaf. Silicon application promoted the transformation of ethanol-extractable, H2O-extractable Pb and NaCl-extractable Pb into HCl-extractable Pb and residual Pb in root, stem and leaf of tobacco, which reduced the toxicity and mobility of Pb in tobacco. Silicon restricted the transportation of Pb from soil to tobacco leaf by reducing the mobility index of Pb from soil to root and the mobility index of Pb from root to stem in soil-tobacco system. Meanwhile, the mobility index of Pb from stem to leaf in soil-tobacco system showed a rising-and-falling trend with the increase of Pb application. Silicon inhibited the Pb migration from soil to tobacco leaf by reducing availability of Pb, mitigating toxicity of Pb to tobacco, and changing the distribution of Pb forms in tobacco, consequently reducing Pb concentration of tobacco leaf. These results demonstrated silicon application could be effective in reducing translocation of Pb from soil to tobacco.

Spatial clustering of pixels of a multispectral image

DOEpatents

Conger, James Lynn

2014-08-19

A method and system for clustering the pixels of a multispectral image is provided. A clustering system computes a maximum spectral similarity score for each pixel that indicates the similarity between that pixel and the most similar neighboring. To determine the maximum similarity score for a pixel, the clustering system generates a similarity score between that pixel and each of its neighboring pixels and then selects the similarity score that represents the highest similarity as the maximum similarity score. The clustering system may apply a filtering criterion based on the maximum similarity score so that pixels with similarity scores below a minimum threshold are not clustered. The clustering system changes the current pixel values of the pixels in a cluster based on an averaging of the original pixel values of the pixels in the cluster.

Design and characterization of high precision in-pixel discriminators for rolling shutter CMOS pixel sensors with full CMOS capability

NASA Astrophysics Data System (ADS)

Fu, Y.; Hu-Guo, C.; Dorokhov, A.; Pham, H.; Hu, Y.

2013-07-01

In order to exploit the ability to integrate a charge collecting electrode with analog and digital processing circuitry down to the pixel level, a new type of CMOS pixel sensors with full CMOS capability is presented in this paper. The pixel array is read out based on a column-parallel read-out architecture, where each pixel incorporates a diode, a preamplifier with a double sampling circuitry and a discriminator to completely eliminate analog read-out bottlenecks. The sensor featuring a pixel array of 8 rows and 32 columns with a pixel pitch of 80 μm×16 μm was fabricated in a 0.18 μm CMOS process. The behavior of each pixel-level discriminator isolated from the diode and the preamplifier was studied. The experimental results indicate that all in-pixel discriminators which are fully operational can provide significant improvements in the read-out speed and the power consumption of CMOS pixel sensors.

ALPIDE: the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Šuljić, M.

2016-11-01

The upgrade of the ALICE vertex detector, the Inner Tracking System (ITS), is scheduled to be installed during the next long shutdown period (2019-2020) of the CERN Large Hadron Collider (LHC) . The current ITS will be replaced by seven concentric layers of Monolithic Active Pixel Sensors (MAPS) with total active surface of ~10 m2, thus making ALICE the first LHC experiment implementing MAPS detector technology on a large scale. The ALPIDE chip, based on TowerJazz 180 nm CMOS Imaging Process, is being developed for this purpose. A particular process feature, the deep p-well, is exploited so the full CMOS logic can be implemented over the active sensor area without impinging on the deposited charge collection. ALPIDE is implemented on silicon wafers with a high resistivity epitaxial layer. A single chip measures 15 mm by 30 mm and contains half a million pixels distributed in 512 rows and 1024 columns. In-pixel circuitry features amplification, shaping, discrimination and multi-event buffering. The readout is hit driven i.e. only addresses of hit pixels are sent to the periphery. The upgrade of the ITS presents two different sets of requirements for sensors of the inner and of the outer layers due to the significantly different track density, radiation level and active detector surface. The ALPIDE chip fulfils the stringent requirements in both cases. The detection efficiency is higher than 99%, fake-hit probability is orders of magnitude lower than the required 10-6 and spatial resolution within the required 5 μm. This performance is to be maintained even after a total ionising does (TID) of 2.7 Mrad and a non-ionising energy loss (NIEL) fluence of 1.7 × 1013 1 MeV neq/cm2, which is above what is expected during the detector lifetime. Readout rate of 100 kHz is provided and the power density of ALPIDE is less than 40 mW/cm2. This contribution will provide a summary of the ALPIDE features and main test results.

Advances in Small Pixel TES-Based X-Ray Microcalorimeter Arrays for Solar Physics and Astrophysics

NASA Technical Reports Server (NTRS)

Bandler, S. R.; Adams, J. S.; Bailey, C. N.; Busch, S. E.; Chervenak, J. A.; Eckart, M. E.; Ewin, A. E.; Finkbeiner, F. M.; Kelley, R. L.; Kelly, D. P.;

Pixelated transmission-mode diamond X-ray detector.

PubMed

Zhou, Tianyi; Ding, Wenxiang; Gaowei, Mengjia; De Geronimo, Gianluigi; Bohon, Jen; Smedley, John; Muller, Erik

2015-11-01

Fabrication and testing of a prototype transmission-mode pixelated diamond X-ray detector (pitch size 60-100 µm), designed to simultaneously measure the flux, position and morphology of an X-ray beam in real time, are described. The pixel density is achieved by lithographically patterning vertical stripes on the front and horizontal stripes on the back of an electronic-grade chemical vapor deposition single-crystal diamond. The bias is rotated through the back horizontal stripes and the current is read out on the front vertical stripes at a rate of ∼ 1 kHz, which leads to an image sampling rate of ∼ 30 Hz. This novel signal readout scheme was tested at beamline X28C at the National Synchrotron Light Source (white beam, 5-15 keV) and at beamline G3 at the Cornell High Energy Synchrotron Source (monochromatic beam, 11.3 keV) with incident beam flux ranges from 1.8 × 10(-2) to 90 W mm(-2). Test results show that the novel detector provides precise beam position (positional noise within 1%) and morphology information (error within 2%), with an additional software-controlled single channel mode providing accurate flux measurement (fluctuation within 1%).

Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

NASA Technical Reports Server (NTRS)

Kroupa, M.; Pinsky, L. S.; Idarraga-Munoz, J.; Hoang, S. M.; Semones, E.; Bahadori, A.; Stoffle, N.; Rios, R.; Vykydal, Z.; Jakubek, J.;

How Many Pixels Does It Take to Make a Good 4"×6" Print? Pixel Count Wars Revisited

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

Digital still cameras emerged following the introduction of the Sony Mavica analog prototype camera in 1981. These early cameras produced poor image quality and did not challenge film cameras for overall quality. By 1995 digital still cameras in expensive SLR formats had 6 mega-pixels and produced high quality images (with significant image processing). In 2005 significant improvement in image quality was apparent and lower prices for digital still cameras (DSCs) started a rapid decline in film usage and film camera sells. By 2010 film usage was mostly limited to professionals and the motion picture industry. The rise of DSCs was marked by a “pixel war” where the driving feature of the cameras was the pixel count where even moderate cost, ˜120, DSCs would have 14 mega-pixels. The improvement of CMOS technology pushed this trend of lower prices and higher pixel counts. Only the single lens reflex cameras had large sensors and large pixels. The drive for smaller pixels hurt the quality aspects of the final image (sharpness, noise, speed, and exposure latitude). Only today are camera manufactures starting to reverse their course and producing DSCs with larger sensors and pixels. This paper will explore why larger pixels and sensors are key to the future of DSCs.

Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

NASA Technical Reports Server (NTRS)

Tanaka, Hidehiko

1987-01-01

A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

Characterization System of Multi-pixel Array TES Microcalorimeter

NASA Astrophysics Data System (ADS)

Yoshimoto, Shota; Maehata, Keisuke; Mitsuda, Kazuhisa; Yamanaka, Yoshihiro; Sakai, Kazuhiro; Nagayoshi, Kenichiro; Yamamoto, Ryo; Hayashi, Tasuku; Muramatsu, Haruka

We have constructed characterization system for 64-pixel array transition-edge sensor (TES) microcalorimeter using a 3He-4He dilution refrigerator (DR) with the cooling power of 60 µW at a temperature of 100 mK. A stick equipped with 384 of Manganin wires was inserted into the refrigerator to perform characteristic measurements of 64-pixel array TES microcalorimeter and superconducting quantum interference device (SQUID) array amplifiers. The stick and Manganin wires were thermally anchored at temperatures of 4 and 1 K with sufficient thermal contact. The cold end of the Manganin wires were thermally anchored and connected to CuNi clad NbTi wires at 0.7 K anchor. Then CuNi clad NbTi wires were wired to connectors placed on the holder mounted on the cold stage attached to the base plate of the mixing chamber. The heat flow to the cold stage through the installed wires was estimated to be 0.15 µW. In the operation test the characterization system maintained temperature below 100 mK.

Organic-on-silicon complementary metal-oxide-semiconductor colour image sensors.

PubMed

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-12

Complementary metal-oxide-semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor.

Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors

PubMed Central

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-01

Complementary metal–oxide–semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor. PMID:25578322

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

PubMed Central

Marrs, Michael A.; Raupp, Gregory B.

2016-01-01

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

PubMed

Marrs, Michael A; Raupp, Gregory B

2016-07-26

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

Fast Imaging Detector Readout Circuits with In-Pixel ADCs for Fourier Transform Imaging Spectrometers

NASA Technical Reports Server (NTRS)

Rider, D.; Blavier, J-F.; Cunningham, T.; Hancock, B.; Key, R.; Pannell, Z.; Sander, S.; Seshadri, S.; Sun, C.; Wrigley, C.

2011-01-01

Focal plane arrays (FPAs) with high frame rates and many pixels benefit several upcoming Earth science missions including GEO-CAPE, GACM, and ACE by enabling broader spatial coverage and higher spectral resolution. FPAs for the PanFTS, a high spatial resolution Fourier transform spectrometer and a candidate instrument for the GEO-CAPE mission are the focus of the developments reported here, but this FPA technology has the potential to enable a variety of future measurements and instruments. The ESTO ACT Program funded the developed of a fast readout integrated circuit (ROIC) based on an innovative in-pixel analog-to-digital converter (ADC). The 128 X 128 pixel ROIC features 60 ?m pixels, a 14-bit ADC in each pixel and operates at a continuous frame rate of 14 kHz consuming only 1.1 W of power. The ROIC outputs digitized data completely eliminating the bulky, power consuming signal chains needed by conventional FPAs. The 128 X 128 pixel ROIC has been fabricated in CMOS and tested at the Jet Propulsion Laboratory. The current version is designed to be hybridized with PIN photodiode arrays via indium bump bonding for light detection in the visible and ultraviolet spectral regions. However, the ROIC design incorporates a small photodiode in each cell to permit detailed characterization of the ROICperformance without the need for hybridization. We will describe the essential features of the ROIC design and present results of ROIC performance measurements.

Pixelated coatings and advanced IR coatings

NASA Astrophysics Data System (ADS)

Pradal, Fabien; Portier, Benjamin; Oussalah, Meihdi; Leplan, Hervé

2017-09-01

Reosc developed pixelated infrared coatings on detector. Reosc manufactured thick pixelated multilayer stacks on IR-focal plane arrays for bi-spectral imaging systems, demonstrating high filter performance, low crosstalk, and no deterioration of the device sensitivities. More recently, a 5-pixel filter matrix was designed and fabricated. Recent developments in pixelated coatings, shows that high performance infrared filters can be coated directly on detector for multispectral imaging. Next generation space instrument can benefit from this technology to reduce their weight and consumptions.

Development of a Model and Computer Code to Describe Solar Grade Silicon Production Processes

NASA Technical Reports Server (NTRS)

Srivastava, R.; Gould, R. K.

1979-01-01

The program aims at developing mathematical models and computer codes based on these models, which allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon. The major interest is in collecting silicon as a liquid on the reactor walls and other collection surfaces. Two reactor systems are of major interest, a SiCl4/Na reactor in which Si(l) is collected on the flow tube reactor walls and a reactor in which Si(l) droplets formed by the SiCl4/Na reaction are collected by a jet impingement method. During this quarter the following tasks were accomplished: (1) particle deposition routines were added to the boundary layer code; and (2) Si droplet sizes in SiCl4/Na reactors at temperatures below the dew point of Si are being calculated.

40 CFR 60.260 - Applicability and designation of affected facility.

Code of Federal Regulations, 2011 CFR

2011-07-01

... affected facility. 60.260 Section 60.260 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Performance for Ferroalloy Production Facilities § 60.260 Applicability and designation of affected facility..., ferrochrome silicon, silvery iron, high-carbon ferrochrome, charge chrome, standard ferromanganese...

40 CFR 60.260 - Applicability and designation of affected facility.

Code of Federal Regulations, 2012 CFR

2012-07-01

... affected facility. 60.260 Section 60.260 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Performance for Ferroalloy Production Facilities § 60.260 Applicability and designation of affected facility..., ferrochrome silicon, silvery iron, high-carbon ferrochrome, charge chrome, standard ferromanganese...

Pixels, Blocks of Pixels, and Polygons: Choosing a Spatial Unit for Thematic Accuracy Assessment

EPA Science Inventory

Pixels, polygons, and blocks of pixels are all potentially viable spatial assessment units for conducting an accuracy assessment. We develop a statistical population-based framework to examine how the spatial unit chosen affects the outcome of an accuracy assessment. The populati...

Solid-state image sensor with focal-plane digital photon-counting pixel array

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

1995-01-01

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

A Proposed Extension to the Soil Moisture and Ocean Salinity Level 2 Algorithm for Mixed Forest and Moderate Vegetation Pixels

NASA Technical Reports Server (NTRS)

Panciera, Rocco; Walker, Jeffrey P.; Kalma, Jetse; Kim, Edward

2011-01-01

The Soil Moisture and Ocean Salinity (SMOS)mission, launched in November 2009, provides global maps of soil moisture and ocean salinity by measuring the L-band (1.4 GHz) emission of the Earth's surface with a spatial resolution of 40-50 km.Uncertainty in the retrieval of soilmoisture over large heterogeneous areas such as SMOS pixels is expected, due to the non-linearity of the relationship between soil moisture and the microwave emission. The current baseline soilmoisture retrieval algorithm adopted by SMOS and implemented in the SMOS Level 2 (SMOS L2) processor partially accounts for the sub-pixel heterogeneity of the land surface, by modelling the individual contributions of different pixel fractions to the overall pixel emission. This retrieval approach is tested in this study using airborne L-band data over an area the size of a SMOS pixel characterised by a mix Eucalypt forest and moderate vegetation types (grassland and crops),with the objective of assessing its ability to correct for the soil moisture retrieval error induced by the land surface heterogeneity. A preliminary analysis using a traditional uniform pixel retrieval approach shows that the sub-pixel heterogeneity of land cover type causes significant errors in soil moisture retrieval (7.7%v/v RMSE, 2%v/v bias) in pixels characterised by a significant amount of forest (40-60%). Although the retrieval approach adopted by SMOS partially reduces this error, it is affected by errors beyond the SMOS target accuracy, presenting in particular a strong dry bias when a fraction of the pixel is occupied by forest (4.1%v/v RMSE,-3.1%v/v bias). An extension to the SMOS approach is proposed that accounts for the heterogeneity of vegetation optical depth within the SMOS pixel. The proposed approach is shown to significantly reduce the error in retrieved soil moisture (2.8%v/v RMSE, -0.3%v/v bias) in pixels characterised by a critical amount of forest (40-60%), at the limited cost of only a crude estimate of the

Comparison between Pixelated Scintillators: CsI(Tl), LaCl 3(Ce) and LYSO(Ce) when coupled to a Silicon Photomultipliers Array

NASA Astrophysics Data System (ADS)

Jeong, Manhee; Van, Benjamin; Wells, Byron T.; D'Aries, Lawrence J.; Hammig, Mark D.

2018-06-01

A large area SiPM array is individually coupled to five different types of scintillators in and each is evaluated for the development of a coded aperture imaging system. In order to readout signals from the 144 pixel array, a resistor network with symmetric charge division circuitry was developed, which successfully provides a significant reduction in the multiplicity of the analog outputs and reduces the size of the accumulated data. Energy resolutions at 662 keV for pixelated arrays of dimensions and material types as follows: 3 × 3 × 20 mm3 CsI(Tl), 4 × 4 × 20 mm3 CsI(Tl), 4 × 4 × 5 mm3 LYSO(Ce), 4 × 4 × 10 mm3 LYSO(Ce), and 2 × 2 × 5 mm3 LaCl3(Ce) have been determined. In addition, sub-millimeter FWHM pixel-identification resolutions were acquired from all of the scintillators tested.

Preparation and biodistribution of radiolabeled fullerene C60 nanocrystals

NASA Astrophysics Data System (ADS)

Nikolić, Nadežda; Vranješ-Ðurić, Sanja; Janković, Drina; Ðokić, Divna; Mirković, Marija; Bibić, Nataša; Trajković, Vladimir

2009-09-01

The present study describes for the first time a procedure for the radiolabeling of fullerene (C60) nanocrystals (nanoC60) with Na 125I, as well as the biodistribution of radiolabeled nanoC60 (125I-nanoC60). The solvent exchange method with tetrahydrofuran was used to make colloidal water suspensions of radiolabeled nanoC60 particles. The radiolabeling procedure with the addition of Na 125I to tetrahydrofuran during dissolution of C60 gave a higher radiochemical yield of radiolabeled nanoC60 particles in comparison to the second option, in which Na 125I was added after C60 was dissolved. Using photon correlation spectroscopy and transmission electron microscopy, 125I-nanoC60 particles were found to have a crystalline structure and a mean diameter of 200-250 nm. The 125I-nanoC60 had a particularly high affinity for human serum albumin, displaying 95% binding efficiency after 1 h. Biodistribution studies of 125I-nanoC60 in rats indicated significant differences in tissue accumulation of 125I-nanoC60 and the radioactive tracer Na 125I. The higher accumulation of radiolabeled nanoC60 was observed in liver and spleen, while accumulation in thyroid, stomach, lungs and intestines was significantly lower in comparison to Na 125I. In addition to being useful for testing the biological distribution of nanoC60, the described radiolabeling procedure might have possible applications in cancer radiotherapy.

Experience of Application of Silicon Matrix as a Charge Detector in the ATIC Experiment

NASA Technical Reports Server (NTRS)

Zatsepin, V. I.; Adams, J. H.; Christl, M. J.

2003-01-01

The Advanced Thin Ionization Calorimeter (ATIC) was built for series of long-duration balloon flights in Antarctica. Its main goal is to measure energy spectra of cosmic ray nuclei from protons up to iron nuclei in the wide range of their energy from 30 GeV up to 100 TeV. The ATIC balloon experiment had its first, test flight that lasted for 16 days from 28 Dec 2000 to 13 Jan 2001 around the South Pole. The ATIC spectrometer consists of a fully active BGO calorimeter, scintillator hodoscopes and a silicon matrix. The silicon matrix consisted of 4480 pixels was used as a charge detector in the experiment. About 25 million cosmic ray events were detected during the flight. In the paper, the charge spectrum obtained with the silicon matrix is analyzed.

Dead pixel replacement in LWIR microgrid polarimeters.

PubMed

Ratliff, Bradley M; Tyo, J Scott; Boger, James K; Black, Wiley T; Bowers, David L; Fetrow, Matthew P

2007-06-11

LWIR imaging arrays are often affected by nonresponsive pixels, or "dead pixels." These dead pixels can severely degrade the quality of imagery and often have to be replaced before subsequent image processing and display of the imagery data. For LWIR arrays that are integrated with arrays of micropolarizers, the problem of dead pixels is amplified. Conventional dead pixel replacement (DPR) strategies cannot be employed since neighboring pixels are of different polarizations. In this paper we present two DPR schemes. The first is a modified nearest-neighbor replacement method. The second is a method based on redundancy in the polarization measurements.We find that the redundancy-based DPR scheme provides an order-of-magnitude better performance for typical LWIR polarimetric data.

An Investigation of the Wear on Silicon Surface at High Humidity.

PubMed

Wang, Xiaodong; Guo, Jian; Xu, Lin; Cheng, Guanggui; Qian, Linmao

2018-06-16

Using an atomic force microscope (AFM), the wear of monocrystalline silicon (covered by a native oxide layer) at high humidity was investigated. The experimental results indicated that tribochemistry played an important role in the wear of the silicon at different relative humidity levels (RH = 60%, 90%). Since the tribochemical reactions were facilitated at 60% RH, the wear of silicon was serious and the friction force was around 1.58 μN under the given conditions. However, the tribochemical reactions were restrained when the wear pair was conducted at high humidity. As a result, the wear of silicon was very slight and the friction force decreased to 0.85 μN at 90% RH. The slight wear of silicon at high humidity was characterized by etching tests. It was demonstrated that the silicon sample surface was partly damaged and the native oxide layer on silicon sample surface had not been totally removed during the wear process. These results may help us optimize the tribological design of dynamic microelectromechanical systems working in humid conditions.

Evaluation of PET Imaging Resolution Using 350 mu{m} Pixelated CZT as a VP-PET Insert Detector

NASA Astrophysics Data System (ADS)

Yin, Yongzhi; Chen, Ximeng; Li, Chongzheng; Wu, Heyu; Komarov, Sergey; Guo, Qingzhen; Krawczynski, Henric; Meng, Ling-Jian; Tai, Yuan-Chuan

2014-02-01

A cadmium-zinc-telluride (CZT) detector with 350 μm pitch pixels was studied in high-resolution positron emission tomography (PET) imaging applications. The PET imaging system was based on coincidence detection between a CZT detector and a lutetium oxyorthosilicate (LSO)-based Inveon PET detector in virtual-pinhole PET geometry. The LSO detector is a 20 ×20 array, with 1.6 mm pitches, and 10 mm thickness. The CZT detector uses ac 20 ×20 ×5 mm substrate, with 350 μm pitch pixelated anodes and a coplanar cathode. A NEMA NU4 Na-22 point source of 250 μm in diameter was imaged by this system. Experiments show that the image resolution of single-pixel photopeak events was 590 μm FWHM while the image resolution of double-pixel photopeak events was 640 μm FWHM. The inclusion of double-pixel full-energy events increased the sensitivity of the imaging system. To validate the imaging experiment, we conducted a Monte Carlo (MC) simulation for the same PET system in Geant4 Application for Emission Tomography. We defined LSO detectors as a scanner ring and 350 μm pixelated CZT detectors as an insert ring. GATE simulated coincidence data were sorted into an insert-scanner sinogram and reconstructed. The image resolution of MC-simulated data (which did not factor in positron range and acolinearity effect) was 460 μm at FWHM for single-pixel events. The image resolutions of experimental data, MC simulated data, and theoretical calculation are all close to 500 μm FWHM when the proposed 350 μm pixelated CZT detector is used as a PET insert. The interpolation algorithm for the charge sharing events was also investigated. The PET image that was reconstructed using the interpolation algorithm shows improved image resolution compared with the image resolution without interpolation algorithm.

Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response

NASA Astrophysics Data System (ADS)

D'Souza, A. I.; Stapelbroek, M. G.; Wijewarnasuriya, P. S.

2010-07-01

Increasing very long-wave infrared (VLWIR, λ c ≈ 15 μm) pixel operability was approached by subdividing each pixel into four interdigitated subpixels. High response is maintained across the pixel, even if one or two interdigitated subpixels are deselected (turned off), because interdigitation provides that the preponderance of minority carriers photogenerated in the pixel are collected by the selected subpixels. Monte Carlo modeling of the photoresponse of the interdigitated subpixel simulates minority-carrier diffusion from carrier creation to recombination. Each carrier generated at an appropriately weighted random location is assigned an exponentially distributed random lifetime τ i, where < τ i> is the bulk minority-carrier lifetime. The minority carrier is allowed to diffuse for a short time d τ, and the fate of the carrier is decided from its present position and the boundary conditions, i.e., whether the carrier is absorbed in a junction, recombined at a surface, reflected from a surface, or recombined in the bulk because it lived for its designated lifetime. If nothing happens, the process is then repeated until one of the boundary conditions is attained. The next step is to go on to the next carrier and repeat the procedure for all the launches of minority carriers. For each minority carrier launched, the original location and boundary condition at fatality are recorded. An example of the results from Monte Carlo modeling is that, for a 20- μm diffusion length, the calculated quantum efficiency (QE) changed from 85% with no subpixels deselected, to 78% with one subpixel deselected, 67% with two subpixels deselected, and 48% with three subpixels deselected. Demonstration of the interdigitated pixel concept and verification of the Monte Carlo modeling utilized λ c(60 K) ≈ 15 μm HgCdTe pixels in a 96 × 96 array format. The measured collection efficiency for one, two, and three subelements selected, divided by the collection efficiency for all

Polarimetric and diffractive evaluation of 3.74 micron pixel-size LCoS in the telecommunications C-band

NASA Astrophysics Data System (ADS)

Wang, Mi; Martínez, Francisco J.; Márquez, Andrés.; Ye, Yabin; Zong, Liangjia; Pascual, Inmaculada; Beléndez, Augusto

2017-08-01

Liquid-crystal on Silicon (LCoS) microdisplays are one of the competing technologies to implement wavelength selective switches (WSS) for optical telecommunications. Last generation LCoS, with more than 4 megapixels, have decreased pixel size to values smaller than 4 microns, what increases interpixel cross-talk effects such as fringing-field. We proceed with an experimental evaluation of a 3.74 micron pixel size parallel-aligned LCoS (PA-LCoS) device. At 1550 nm, for the first time we use time-average Stokes polarimetry to measure the retardance and its flicker magnitude as a function of voltage. We also verify the effect of the antireflection coating when we try to characterize the PA-LCoS out of the designed interval for the AR coating. Some preliminary results for the performance for binary gratings are also given, where the decrease of modulation range with the increase in spatial frequency is shown, together with some residual polarization effects.

Evaporative CO2 microchannel cooling for the LHCb VELO pixel upgrade

NASA Astrophysics Data System (ADS)

de Aguiar Francisco, O. A.; Buytaert, J.; Collins, P.; Dumps, R.; John, M.; Mapelli, A.; Romagnoli, G.

2015-05-01

The LHCb Vertex Detector (VELO) will be upgraded in 2018 to a lightweight pixel detector capable of 40 MHz readout and operation in very close proximity to the LHC beams. The thermal management of the system will be provided by evaporative CO2 circulating in microchannels embedded within thin silicon plates. This solution has been selected due to the excellent thermal efficiency, the absence of thermal expansion mismatch with silicon ASICs and sensors, the radiation hardness of CO2, and very low contribution to the material budget. Although microchannel cooling is gaining considerable attention for applications related to microelectronics, it is still a novel technology for particle physics experiments, in particular when combined with evaporative CO2 cooling. The R&D effort for LHCb is focused on the design and layout of the channels together with a fluidic connector and its attachment which must withstand pressures up to 170 bar. Even distribution of the coolant is ensured by means of the use of restrictions implemented before the entrance to a race track like layout of the main cooling channels. The coolant flow and pressure drop have been simulated as well as the thermal performance of the device. This proceeding describes the design and optimization of the cooling system for LHCb and the latest prototyping results.

X-ray metrology of an array of active edge pixel sensors for use at synchrotron light sources

NASA Astrophysics Data System (ADS)

Plackett, R.; Arndt, K.; Bortoletto, D.; Horswell, I.; Lockwood, G.; Shipsey, I.; Tartoni, N.; Williams, S.

2018-01-01

We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.

Electrometallurgy of Silicon

DTIC Science & Technology

1988-01-01

wind, plants, and water impounded in elevated reservoirs. Photovoltaic or solar cells, which convert sunlight directly to electricity, belongs tc, the...on record is that of St. Claire DeVille, who claimed that silicon was produced by electrolysing an impure melt of NaAlC14, but his material did not...this composition and purified melts were electrolysed at about 14500C in graphite crucible and using graphite electrodes. Applied potentials were

Novel duplex vapor-electrochemical method for silicon solar cells

NASA Technical Reports Server (NTRS)

Nanis, L.; Sanjurjo, A.; Sancier, K. M.; Kapur, V. K.; Bartlett, R. W.; Westphal, S.

1980-01-01

A process was developed for the economic production of high purity Si from inexpensive reactants, based on the Na reduction of SiF4 gas. The products of reaction (NaF, Si) are separated by either aqueous leaching or by direct melting of the NaF-Si product mixture. Impurities known to degrade solar cell performance are all present at sufficiently low concentrations so that melt solidification (e.g., Czochralski) will provide a silicon material suitable for solar cells.

PIXELS: Using field-based learning to investigate students' concepts of pixels and sense of scale

NASA Astrophysics Data System (ADS)

Pope, A.; Tinigin, L.; Petcovic, H. L.; Ormand, C. J.; LaDue, N.

2015-12-01

Empirical work over the past decade supports the notion that a high level of spatial thinking skill is critical to success in the geosciences. Spatial thinking incorporates a host of sub-skills such as mentally rotating an object, imagining the inside of a 3D object based on outside patterns, unfolding a landscape, and disembedding critical patterns from background noise. In this study, we focus on sense of scale, which refers to how an individual quantified space, and is thought to develop through kinesthetic experiences. Remote sensing data are increasingly being used for wide-reaching and high impact research. A sense of scale is critical to many areas of the geosciences, including understanding and interpreting remotely sensed imagery. In this exploratory study, students (N=17) attending the Juneau Icefield Research Program participated in a 3-hour exercise designed to study how a field-based activity might impact their sense of scale and their conceptions of pixels in remotely sensed imagery. Prior to the activity, students had an introductory remote sensing lecture and completed the Sense of Scale inventory. Students walked and/or skied the perimeter of several pixel types, including a 1 m square (representing a WorldView sensor's pixel), a 30 m square (a Landsat pixel) and a 500 m square (a MODIS pixel). The group took reflectance measurements using a field radiometer as they physically traced out the pixel. The exercise was repeated in two different areas, one with homogenous reflectance, and another with heterogeneous reflectance. After the exercise, students again completed the Sense of Scale instrument and a demographic survey. This presentation will share the effects and efficacy of the field-based intervention to teach remote sensing concepts and to investigate potential relationships between students' concepts of pixels and sense of scale.

A 400 KHz line rate 2048-pixel stitched SWIR linear array

NASA Astrophysics Data System (ADS)

Anchlia, Ankur; Vinella, Rosa M.; Gielen, Daphne; Wouters, Kristof; Vervenne, Vincent; Hooylaerts, Peter; Deroo, Pieter; Ruythooren, Wouter; De Gaspari, Danny; Das, Jo; Merken, Patrick

2016-05-01

Xenics has developed a family of stitched SWIR long linear arrays that operate up to 400 KHz of line rate. These arrays serve medical and industrial applications that require high line rates as well as space applications that require long linear arrays. The arrays are based on a modular ROIC design concept: modules of 512 pixels are stitched during fabrication to achieve 512, 1024 and 2048 pixel arrays. Each 512-pixel module has its own on-chip digital sequencer, analog readout chain and 4 output buffers. This modular concept enables a long array to run at a high line rates irrespective of the array length, which limits the line rate in a traditional linear array. The ROIC is flip-chipped with InGaAs detector arrays. The FPA has a pixel pitch of 12.5μm and has two pixel flavors: square (12.5μm) and rectangular (250μm). The frontend circuit is based on Capacitive Trans-impedance Amplifier (CTIA) to attain stable detector bias, and good linearity and signal integrity, especially at high speeds. The CTIA has an input auto-zero mechanism that allows to have low detector bias (<20mV). An on-chip Correlated Double Sample (CDS) facilitates removal of CTIA KTC and 1/f noise, and other offsets, achieving low noise performance. There are five gain modes in the FPA giving the full well range from 85Ke- to 40Me-. The measured input referred noise is 35e-rms in the highest gain mode. The FPA operates in Integrate While Read mode and, at a master clock rate of 60MHz and a minimum integration time of 1.4μs, achieves the highest line rate of 400 KHz. In this paper, design details and measurements results are presented in order to demonstrate the array performance.

Pixelated transmission-mode diamond X-ray detector

PubMed Central

Zhou, Tianyi; Ding, Wenxiang; Gaowei, Mengjia; De Geronimo, Gianluigi; Bohon, Jen; Smedley, John; Muller, Erik

2015-01-01

Fabrication and testing of a prototype transmission-mode pixelated diamond X-ray detector (pitch size 60–100 µm), designed to simultaneously measure the flux, position and morphology of an X-ray beam in real time, are described. The pixel density is achieved by lithographically patterning vertical stripes on the front and horizontal stripes on the back of an electronic-grade chemical vapor deposition single-crystal diamond. The bias is rotated through the back horizontal stripes and the current is read out on the front vertical stripes at a rate of ∼1 kHz, which leads to an image sampling rate of ∼30 Hz. This novel signal readout scheme was tested at beamline X28C at the National Synchrotron Light Source (white beam, 5–15 keV) and at beamline G3 at the Cornell High Energy Synchrotron Source (monochromatic beam, 11.3 keV) with incident beam flux ranges from 1.8 × 10−2 to 90 W mm−2. Test results show that the novel detector provides precise beam position (positional noise within 1%) and morphology information (error within 2%), with an additional software-controlled single channel mode providing accurate flux measurement (fluctuation within 1%). PMID:26524304

Nitridation of silicon by nitrogen neutral beam

NASA Astrophysics Data System (ADS)

Hara, Yasuhiro; Shimizu, Tomohiro; Shingubara, Shoso

2016-02-01

Silicon nitridation was investigated at room temperature using a nitrogen neutral beam (NB) extracted at acceleration voltages of less than 100 V. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formation of a Si3N4 layer on a Si (1 0 0) substrate when the acceleration voltage was higher than 20 V. The XPS depth profile indicated that nitrogen diffused to a depth of 36 nm for acceleration voltages of 60 V and higher. The thickness of the silicon nitrided layer increased with the acceleration voltages from 20 V to 60 V. Cross-sectional transmission electron microscopy (TEM) analysis indicated a Si3N4 layer thickness of 3.1 nm was obtained at an acceleration voltage of 100 V. Moreover, it was proved that the nitrided silicon layer formed by the nitrogen NB at room temperature was effective as the passivation film in the wet etching process.

A Pixel Pitch-Matched Ultrasound Receiver for 3-D Photoacoustic Imaging With Integrated Delta-Sigma Beamformer in 28-nm UTBB FD-SOI

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Man-Chia; Perez, Aldo Pena; Kothapalli, Sri-Rajasekhar

This study presents a pixel pitch-matched readout chip for 3-D photoacoustic (PA) imaging, featuring a dedicated signal conditioning and delta-sigma modulation integrated within a pixel area of 250 μm by 250 μm. The proof-of-concept receiver was implemented in an STMicroelectronics's 28-nm Fully Depleted Silicon On Insulator technology, and interfaces to a 4 × 4 subarray of capacitive micromachined ultrasound transducers (CMUTs). The front-end signal conditioning in each pixel employs a coarse/fine gain tuning architecture to fulfill the 90-dB dynamic range requirement of the application. The employed delta-sigma beamforming architecture obviates the need for area-consuming Nyquist ADCs and thereby enables anmore » efficient in-pixel A/D conversion. The per-pixel switched-capacitor ΔΣ modulator leverages slewing-dominated and area-optimized inverter-based amplifiers. It occupies only 1/4th of the pixel, and its area compares favorably with state-of-the-art designs that offer the same SNR and bandwidth. The modulator's measured peak signal-to-noise-and-distortion ratio is 59.9 dB for a 10-MHz input bandwidth, and it consumes 6.65 mW from a 1V supply. The overall subarray beamforming approach improves the area per channel by 7.4 times and the single-channel SNR by 8 dB compared to prior art with similar delay resolution and power dissipation. Finally, the functionality of the designed chip was evaluated within a PA imaging experiment, employing a flip-chip bonded 2-D CMUT array.« less

A Pixel Pitch-Matched Ultrasound Receiver for 3-D Photoacoustic Imaging With Integrated Delta-Sigma Beamformer in 28-nm UTBB FD-SOI

DOE PAGES

Chen, Man-Chia; Perez, Aldo Pena; Kothapalli, Sri-Rajasekhar; ...

2017-10-16

This study presents a pixel pitch-matched readout chip for 3-D photoacoustic (PA) imaging, featuring a dedicated signal conditioning and delta-sigma modulation integrated within a pixel area of 250 μm by 250 μm. The proof-of-concept receiver was implemented in an STMicroelectronics's 28-nm Fully Depleted Silicon On Insulator technology, and interfaces to a 4 × 4 subarray of capacitive micromachined ultrasound transducers (CMUTs). The front-end signal conditioning in each pixel employs a coarse/fine gain tuning architecture to fulfill the 90-dB dynamic range requirement of the application. The employed delta-sigma beamforming architecture obviates the need for area-consuming Nyquist ADCs and thereby enables anmore » efficient in-pixel A/D conversion. The per-pixel switched-capacitor ΔΣ modulator leverages slewing-dominated and area-optimized inverter-based amplifiers. It occupies only 1/4th of the pixel, and its area compares favorably with state-of-the-art designs that offer the same SNR and bandwidth. The modulator's measured peak signal-to-noise-and-distortion ratio is 59.9 dB for a 10-MHz input bandwidth, and it consumes 6.65 mW from a 1V supply. The overall subarray beamforming approach improves the area per channel by 7.4 times and the single-channel SNR by 8 dB compared to prior art with similar delay resolution and power dissipation. Finally, the functionality of the designed chip was evaluated within a PA imaging experiment, employing a flip-chip bonded 2-D CMUT array.« less

SiliPET: An ultra-high resolution design of a small animal PET scanner based on stacks of double-sided silicon strip detector

NASA Astrophysics Data System (ADS)

Di Domenico, Giovanni; Zavattini, Guido; Cesca, Nicola; Auricchio, Natalia; Andritschke, Robert; Schopper, Florian; Kanbach, Gottfried

2007-02-01

We investigated with Monte Carlo simulations, using the EGSNrcMP code, the capabilities of a small animal PET scanner based on four stacks of double-sided silicon strip detectors. Each stack consists of 40 silicon detectors with dimension of 60×60×1 mm 3 and 128 orthogonal strips on each side. Two coordinates of the interaction are given by the strips, whereas the third coordinate is given by the detector number in the stack. The stacks are arranged to form a box of 5×5×6 cm 3 with minor sides opened; the box represents the minimal FOV of the scanner. The performance parameters of the SiliPET scanner have been estimated giving a (positron range limited) spatial resolution of 0.52 mm FWHM, and an absolute sensitivity of 5.1% at the center of system. Preliminary results of a proof of principle measurement done with the MEGA advanced Compton imager using a ≈1 mm diameter 22Na source, showed a focal ray tracing FWHM of 1 mm.

Crystal growth in supercritical ammonia using high surface area silicon nitride feedstock

NASA Astrophysics Data System (ADS)

Kaskel, Stefan; Khanna, Meikh; Zibrowius, Bodo; Schmidt, Hans-Werner; Ullner, Dirk

2004-01-01

The use of amorphous high surface area silicon nitride is proposed as a raw material for crystallization experiments in supercritical ammonia. Compared with earlier studies, the use of highly dispersed solids results in the crystallization of inorganic nitrides under relatively mild conditions (673 K). Mineralizers such as amides (LiNH 2, NaNH 2, KNH 2) are found to be effective crystallization aids. The crystalline products, detected using powder X-ray diffraction, are either MSi 2N 3 (M=Li, Na) or Si 2N 2NH. Si 2N 2NH is also characterized using 29Si MAS NMR. The spectrum shows a narrow line located at -44.7 ppm, whereas for amorphous silicon nitride-based materials the line is broad. The ammonothermal reaction of NaAl(NH 2) 4 and high surface area silicon nitride at 673 K affords a new orthorhombic phase, isostructural with NaSi 2N 3, but with extended lattice constants ( a=9.634, b=5.643, c=5.011 Å). Effective crystallization is also achieved using fluoride mineralizers (KF, CsF) at 673 K. A new small scale autoclave, suitable for laboratory syntheses at temperatures up to 873 K, is presented that can be loaded under inert gas.

CVD diamond pixel detectors for LHC experiments

NASA Astrophysics Data System (ADS)

Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A. M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J. C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.; RD42 Collaboration

1999-08-01

This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

Design Studies of a CZT-based Detector Combined with a Pixel-Geometry-Matching Collimator for SPECT Imaging.

PubMed

Weng, Fenghua; Bagchi, Srijeeta; Huang, Qiu; Seo, Youngho

2013-10-01

Single Photon Emission Computed Tomography (SPECT) suffers limited efficiency due to the need for collimators. Collimator properties largely decide the data statistics and image quality. Various materials and configurations of collimators have been investigated in many years. The main thrust of our study is to evaluate the design of pixel-geometry-matching collimators to investigate their potential performances using Geant4 Monte Carlo simulations. Here, a pixel-geometry-matching collimator is defined as a collimator which is divided into the same number of pixels as the detector's and the center of each pixel in the collimator is a one-to-one correspondence to that in the detector. The detector is made of Cadmium Zinc Telluride (CZT), which is one of the most promising materials for applications to detect hard X-rays and γ -rays due to its ability to obtain good energy resolution and high light output at room temperature. For our current project, we have designed a large-area, CZT-based gamma camera (20.192 cm×20.192 cm) with a small pixel pitch (1.60 mm). The detector is pixelated and hence the intrinsic resolution can be as small as the size of the pixel. Materials of collimator, collimator hole geometry, detection efficiency, and spatial resolution of the CZT detector combined with the pixel-matching collimator were calculated and analyzed under different conditions. From the simulation studies, we found that such a camera using rectangular holes has promising imaging characteristics in terms of spatial resolution, detection efficiency, and energy resolution.

Urban Image Classification: Per-Pixel Classifiers, Sub-Pixel Analysis, Object-Based Image Analysis, and Geospatial Methods. 10; Chapter

NASA Technical Reports Server (NTRS)

Myint, Soe W.; Mesev, Victor; Quattrochi, Dale; Wentz, Elizabeth A.

2013-01-01

Remote sensing methods used to generate base maps to analyze the urban environment rely predominantly on digital sensor data from space-borne platforms. This is due in part from new sources of high spatial resolution data covering the globe, a variety of multispectral and multitemporal sources, sophisticated statistical and geospatial methods, and compatibility with GIS data sources and methods. The goal of this chapter is to review the four groups of classification methods for digital sensor data from space-borne platforms; per-pixel, sub-pixel, object-based (spatial-based), and geospatial methods. Per-pixel methods are widely used methods that classify pixels into distinct categories based solely on the spectral and ancillary information within that pixel. They are used for simple calculations of environmental indices (e.g., NDVI) to sophisticated expert systems to assign urban land covers. Researchers recognize however, that even with the smallest pixel size the spectral information within a pixel is really a combination of multiple urban surfaces. Sub-pixel classification methods therefore aim to statistically quantify the mixture of surfaces to improve overall classification accuracy. While within pixel variations exist, there is also significant evidence that groups of nearby pixels have similar spectral information and therefore belong to the same classification category. Object-oriented methods have emerged that group pixels prior to classification based on spectral similarity and spatial proximity. Classification accuracy using object-based methods show significant success and promise for numerous urban 3 applications. Like the object-oriented methods that recognize the importance of spatial proximity, geospatial methods for urban mapping also utilize neighboring pixels in the classification process. The primary difference though is that geostatistical methods (e.g., spatial autocorrelation methods) are utilized during both the pre- and post

Texturization of as-cut p-type monocrystalline silicon wafer using different wet chemical solutions

NASA Astrophysics Data System (ADS)

Hashmi, Galib; Hasanuzzaman, Muhammad; Basher, Mohammad Khairul; Hoq, Mahbubul; Rahman, Md. Habibur

2018-06-01

Implementing texturization process on the monocrystalline silicon substrate reduces reflection and enhances light absorption of the substrate. Thus texturization is one of the key elements to increase the efficiency of solar cell. Considering as-cut monocrystalline silicon wafer as base substrate, in this work different concentrations of Na2CO3 and NaHCO3 solution, KOH-IPA (isopropyl alcohol) solution and tetramethylammonium hydroxide solution with different time intervals have been investigated for texturization process. Furthermore, saw damage removal process was conducted with 10% NaOH solution, 20 wt% KOH-13.33 wt% IPA solution and HF/nitric/acetic acid solution. The surface morphology of saw damage, saw damage removed surface and textured wafer were observed using optical microscope and field emission scanning electron microscopy. Texturization causes pyramidal micro structures on the surface of (100) oriented monocrystalline silicon wafer. The height of the pyramid on the silicon surface varies from 1.5 to 3.2 µm and the inclined planes of the pyramids are acute angle. Contact angle value indicates that the textured wafer's surface fall in between near-hydrophobic to hydrophobic range. With respect to base material absolute reflectance 1.049-0.75% within 250-800 nm wavelength region, 0.1-0.026% has been achieved within the same wavelength region when textured with 0.76 wt% KOH-4 wt% IPA solution for 20 min. Furthermore, an alternative route of using 1 wt% Na2CO3-0.2 wt% NaHCO3 solution for 50 min has been exploited in the texturization process.

UV-visible sensors based on polymorphous silicon

NASA Astrophysics Data System (ADS)

Guedj, Cyril S.; Cabarrocas, Pere R. i.; Massoni, Nicolas; Moussy, Norbert; Morel, Damien; Tchakarov, Svetoslav; Bonnassieux, Yvan

2003-09-01

UV-based imaging systems can be used for low-altitude rockets detection or biological agents identification (for instance weapons containing ANTHRAX). Compared to conventional CCD technology, CMOS-based active pixel sensors provide several advantages, including excellent electro-optical performances, high integration, low voltage operation, low power consumption, low cost, long lifetime, and robustness against environment. The monolithic integration of UV, visible and infrared detectors on the same uncooled CMOS smart system would therefore represent a major advance in the combat field, for characterization and representation of targets and backgrounds. In this approach, we have recently developped a novel technology using polymorphous silicon. This new material, fully compatible with above-IC silicon technology, is made of nanometric size ordered domains embedded in an amorphous matrix. The typical quantum efficiency of detectors made of this nano-material reach up to 80 % at 550 nm and 30 % in the UV range, depending of the design and the growth parameters. Furthermore, a record dark current of 20 pA/cm2 at -3 V has been reached. In addition, this new generation of sensors is significantly faster and more stable than their amorphous silicon counterparts. In this paper, we will present the relationship between the sensor technology and the overall performances.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Seshadri, Suresh (Inventor); Cole, David (Inventor); Smith, Roger M. (Inventor); Hancock, Bruce R. (Inventor)

2017-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Smith, Roger M (Inventor); Hancock, Bruce R. (Inventor); Cole, David (Inventor); Seshadri, Suresh (Inventor)

2013-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

Ion implantation reduces radiation sensitivity of metal oxide silicon /MOS/ devices

NASA Technical Reports Server (NTRS)

1971-01-01

Implanting nitrogen ions improves hardening of silicon oxides 30 percent to 60 percent against ionizing radiation effects. Process reduces sensitivity, but retains stability normally shown by interfaces between silicon and thermally grown oxides.

Radiation damage caused by cold neutrons in boron doped CMOS active pixel sensors

NASA Astrophysics Data System (ADS)

Linnik, B.; Bus, T.; Deveaux, M.; Doering, D.; Kudejova, P.; Wagner, F. M.; Yazgili, A.; Stroth, J.

2017-05-01

CMOS Monolithic Active Pixel Sensors (MAPS) are considered as an emerging technology in the field of charged particle tracking. They will be used in the vertex detectors of experiments like STAR, CBM and ALICE and are considered for the ILC and the tracker of ATLAS. In those applications, the sensors are exposed to sizeable radiation doses. While the tolerance of MAPS to ionizing radiation and fast hadrons is well known, the damage caused by low energy neutrons was not studied so far. Those slow neutrons may initiate nuclear fission of 10B dopants found in the B-doped silicon active medium of MAPS. This effect was expected to create an unknown amount of radiation damage beyond the predictions of the NIEL (Non Ionizing Energy Loss) model for pure silicon. We estimate the impact of this effect by calculating the additional NIEL created by this fission. Moreover, we show first measured data for CMOS sensors which were irradiated with cold neutrons. The empirical results contradict the prediction of the updated NIEL model both, qualitatively and quantitatively: the sensors irradiated with slow neutrons show an unexpected and strong acceptor removal, which is not observed in sensors irradiated with MeV neutrons.

Hybrid Circuit Quantum Electrodynamics: Coupling a Single Silicon Spin Qubit to a Photon

DTIC Science & Technology

2015-01-01

HYBRID CIRCUIT QUANTUM ELECTRODYNAMICS: COUPLING A SINGLE SILICON SPIN QUBIT TO A PHOTON PRINCETON UNIVERSITY JANUARY 2015 FINAL...SILICON SPIN QUBIT TO A PHOTON 5a. CONTRACT NUMBER FA8750-12-2-0296 5b. GRANT NUMBER N/A 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Jason R. Petta...architectures. 15. SUBJECT TERMS Quantum Computing, Quantum Hybrid Circuits, Quantum Electrodynamics, Coupling a Single Silicon Spin Qubit to a Photon

Incorporation of dopant impurities into a silicon oxynitride matrix containing silicon nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehrhardt, Fabien; Muller, Dominique; Slaoui, Abdelilah, E-mail: abdelilah.slaoui@unistra.fr

2016-05-07

Dopant impurities, such as gallium (Ga), indium (In), and phosphorus (P), were incorporated into silicon-rich silicon oxynitride (SRSON) thin films by the ion implantation technique. To form silicon nanoparticles, the implanted layers were thermally annealed at temperatures up to 1100 °C for 60 min. This thermal treatment generates a phase separation of the silicon nanoparticles from the SRSON matrix in the presence of the dopant atoms. We report on the position of the dopant species within the host matrix and relative to the silicon nanoparticles, as well as on the effect of the dopants on the crystalline structure and the size ofmore » the Si nanoparticles. The energy-filtered transmission electron microscopy technique is thoroughly used to identify the chemical species. The distribution of the dopant elements within the SRSON compound is determined using Rutherford backscattering spectroscopy. Energy dispersive X-ray mapping coupled with spectral imaging of silicon plasmons was performed to spatially localize at the nanoscale the dopant impurities and the silicon nanoparticles in the SRSON films. Three different behaviors were observed according to the implanted dopant type (Ga, In, or P). The In-doped SRSON layers clearly showed separated nanoparticles based on indium, InOx, or silicon. In contrast, in the P-doped SRSON layers, Si and P are completely miscible. A high concentration of P atoms was found within the Si nanoparticles. Lastly, in Ga-doped SRSON the Ga atoms formed large nanoparticles close to the SRSON surface, while the Si nanoparticles were localized in the bulk of the SRSON layer. In this work, we shed light on the mechanisms responsible for these three different behaviors.« less

Spatiotemporal Pixelization to Increase the Recognition Score of Characters for Retinal Prostheses

PubMed Central

Kim, Hyun Seok; Park, Kwang Suk

2017-01-01

Most of the retinal prostheses use a head-fixed camera and a video processing unit. Some studies proposed various image processing methods to improve visual perception for patients. However, previous studies only focused on using spatial information. The present study proposes a spatiotemporal pixelization method mimicking fixational eye movements to generate stimulation images for artificial retina arrays by combining spatial and temporal information. Input images were sampled with a resolution that was four times higher than the number of pixel arrays. We subsampled this image and generated four different phosphene images. We then evaluated the recognition scores of characters by sequentially presenting phosphene images with varying pixel array sizes (6 × 6, 8 × 8 and 10 × 10) and stimulus frame rates (10 Hz, 15 Hz, 20 Hz, 30 Hz, and 60 Hz). The proposed method showed the highest recognition score at a stimulus frame rate of approximately 20 Hz. The method also significantly improved the recognition score for complex characters. This method provides a new way to increase practical resolution over restricted spatial resolution by merging the higher resolution image into high-frame time slots. PMID:29073735

Shadow-free single-pixel imaging

NASA Astrophysics Data System (ADS)

Li, Shunhua; Zhang, Zibang; Ma, Xiao; Zhong, Jingang

2017-11-01

Single-pixel imaging is an innovative imaging scheme and receives increasing attention in recent years, for it is applicable for imaging at non-visible wavelengths and imaging under weak light conditions. However, as in conventional imaging, shadows would likely occur in single-pixel imaging and sometimes bring negative effects in practical uses. In this paper, the principle of shadows occurrence in single-pixel imaging is analyzed, following which a technique for shadows removal is proposed. In the proposed technique, several single-pixel detectors are used to detect the backscattered light at different locations so that the shadows in the reconstructed images corresponding to each detector shadows are complementary. Shadow-free reconstruction can be derived by fusing the shadow-complementary images using maximum selection rule. To deal with the problem of intensity mismatch in image fusion, we put forward a simple calibration. As experimentally demonstrated, the technique is able to reconstruct monochromatic and full-color shadow-free images.

Resolution performance of a 0.60-NA, 364-nm laser direct writer

NASA Astrophysics Data System (ADS)

Allen, Paul C.; Buck, Peter D.

1990-06-01

ATEQ has developed a high resolution laser scanning printing engine based on the 8 beam architecture of the CORE- 2000. This printing engine has been incorporated into two systems: the CORE-2500 for the production of advanced masks and reticles and a prototype system for direct write on wafers. The laser direct writer incorporates a through-the-lens alignment system and a rotary chuck for theta alignment. Its resolution performance is delivered by a 0. 60 NA laser scan lens and a novel air-jet focus system. The short focal length high resolution lens also reduces beam position errors thereby improving overall pattern accuracy. In order to take advantage of the high NA optics a high performance focus servo was developed capable of dynamic focus with a maximum error of 0. 15 tm. The focus system uses a hot wire anemometer to measure air flow through an orifice abutting the wafer providing a direct measurement to the top surface of resist independent of substrate properties. Lens specifications are presented and compared with the previous design. Bench data of spot size vs. entrance pupil filling show spot size performance down to 0. 35 m FWHM. The lens has a linearity specification of 0. 05 m system measurements of lens linearity indicate system performance substantially below this. The aerial image of the scanned beams is measured using resist as a threshold detector. An effective spot size is

Hexagonal Pixels and Indexing Scheme for Binary Images

NASA Technical Reports Server (NTRS)

Johnson, Gordon G.

2004-01-01

A scheme for resampling binaryimage data from a rectangular grid to a regular hexagonal grid and an associated tree-structured pixel-indexing scheme keyed to the level of resolution have been devised. This scheme could be utilized in conjunction with appropriate image-data-processing algorithms to enable automated retrieval and/or recognition of images. For some purposes, this scheme is superior to a prior scheme that relies on rectangular pixels: one example of such a purpose is recognition of fingerprints, which can be approximated more closely by use of line segments along hexagonal axes than by line segments along rectangular axes. This scheme could also be combined with algorithms for query-image-based retrieval of images via the Internet. A binary image on a rectangular grid is generated by raster scanning or by sampling on a stationary grid of rectangular pixels. In either case, each pixel (each cell in the rectangular grid) is denoted as either bright or dark, depending on whether the light level in the pixel is above or below a prescribed threshold. The binary data on such an image are stored in a matrix form that lends itself readily to searches of line segments aligned with either or both of the perpendicular coordinate axes. The first step in resampling onto a regular hexagonal grid is to make the resolution of the hexagonal grid fine enough to capture all the binaryimage detail from the rectangular grid. In practice, this amounts to choosing a hexagonal-cell width equal to or less than a third of the rectangular- cell width. Once the data have been resampled onto the hexagonal grid, the image can readily be checked for line segments aligned with the hexagonal coordinate axes, which typically lie at angles of 30deg, 90deg, and 150deg with respect to say, the horizontal rectangular coordinate axis. Optionally, one can then rotate the rectangular image by 90deg, then again sample onto the hexagonal grid and check for line segments at angles of 0deg, 60deg

WFC3 UVIS Pixel-to-Pixel QE Variations via Internal Flats Monitor

NASA Astrophysics Data System (ADS)

Bajaj, Varun

2016-10-01

The UVIS detector has a population of pixels that exhibit anomalous QE variations between anneals, characterized by a sensitivity loss that is greater in the blue than in the red. This population is randomly distributed, with evidence of clustering behavior in the UV, and is seemingly unique for each anneal cycle. This program, a continuation of cycle 23 program 14389, will aim to constrain the maximum low-sensitivity population existing before an anneal in both the UV and Visible filters. To monitor the UV behavior, internal flats with the D2 lamp will be taken through F225W and F336W. To monitor the behavior in the Visible filters, internal flats with the tungsten lamp will be taken a week before the anneal, when the population of anomalous pixels is the greatest. Internal flats with the Tungsten lamp will be taken to monitor the population in the visible filters, with data taken the week before the anneal to sample the maximum population of anomalous pixels.

Multiple Aromaticity and Antiaromaticity in Silicon Clusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhai, Hua JIN.; Kuznetsov, A E.; Boldyrev, Alexander I.

A series of silicon clusters containing four atoms but with different charge states (Si{sub 4}{sup 2+}, Si{sub 4}, Si{sub 4}{sup 2-}, and NaSi{sub 4}{sup -}) were studied by photoelectron spectroscopy and ab initio calculations. Structure evolution and chemical bonding in this series were interpreted in terms of aromaticity and antiaromaticity, which allowed the prediction of how structures of the four-atom silicon clusters change upon addition or removal of two electrons. It is shown that Si{sub 4}{sup 2+} is square-planar, analogous to the recently discovered aromatic Al{sub 4}{sup 2-} cluster. Upon addition of two electrons, neutral Si{sub 4} becomes {sigma}-antiaromatic andmore » exhibits a rhombus distortion. Adding two more electrons to Si{sub 4} leads to two energetically close structures of Si{sub 4}{sup 2-}: either a double antiaromatic parallelogram structure or an aromatic system with a butterfly distortion. Because of the electronic instability of doubly charged Si{sub 4}{sup 2-}, a stabilizing cation (Na{sup +}) was used to produce Si{sub 4}{sup 2-} in the gas phase in the form of Na{sup +}[Si{sub 4}{sup 2-}], which was characterized experimentally by photoelectron spectroscopy. Multiple antiaromaticity in the parallelogram Na{sup +}[Si{sub 4}{sup 2-}] species is highly unusual.« less

Fabrication of planar optical waveguides by 6.0 MeV silicon ion implantation in Nd-doped phosphate glasses

NASA Astrophysics Data System (ADS)

Shen, Xiao-Liang; Dai, Han-Qing; Zhang, Liao-Lin; Wang, Yue; Zhu, Qi-Feng; Guo, Hai-Tao; Li, Wei-Nan; Liu, Chun-Xiao

2018-04-01

We report the fabrication of a planar optical waveguide by silicon ion implantation into Nd-doped phosphate glass at an energy of 6.0 MeV and a dose of 5.0 × 1014 ions/cm2. The change in the surface morphology of the glass after the implantation can be clearly observed by scanning electron microscopy. The measurement of the dark mode spectrum of the waveguide is conducted using a prism coupler at 632.8 nm. The refractive index distribution of the waveguide is reconstructed by the reflectivity calculation method. The near-field optical intensity profile of the waveguide is measured using an end-face coupling system. The waveguide with good optical properties on the glass matrix may be valuable for the application of the Nd-doped phosphate glass in integrated optical devices.

Color constancy using bright-neutral pixels

NASA Astrophysics Data System (ADS)

Wang, Yanfang; Luo, Yupin

2014-03-01

An effective illuminant-estimation approach for color constancy is proposed. Bright and near-neutral pixels are selected to jointly represent the illuminant color and utilized for illuminant estimation. To assess the representing capability of pixels, bright-neutral strength (BNS) is proposed by combining pixel chroma and brightness. Accordingly, a certain percentage of pixels with the largest BNS is selected to be the representative set. For every input image, a proper percentage value is determined via an iterative strategy by seeking the optimal color-corrected image. To compare various color-corrected images of an input image, image color-cast degree (ICCD) is devised using means and standard deviations of RGB channels. Experimental evaluation on standard real-world datasets validates the effectiveness of the proposed approach.

Broadband Terahertz Computed Tomography Using a 5k-pixel Real-time THz Camera

NASA Astrophysics Data System (ADS)

Trichopoulos, Georgios C.; Sertel, Kubilay

2015-07-01

We present a novel THz computed tomography system that enables fast 3-dimensional imaging and spectroscopy in the 0.6-1.2 THz band. The system is based on a new real-time broadband THz camera that enables rapid acquisition of multiple cross-sectional images required in computed tomography. Tomographic reconstruction is achieved using digital images from the densely-packed large-format (80×64) focal plane array sensor located behind a hyper-hemispherical silicon lens. Each pixel of the sensor array consists of an 85 μm × 92 μm lithographically fabricated wideband dual-slot antenna, monolithically integrated with an ultra-fast diode tuned to operate in the 0.6-1.2 THz regime. Concurrently, optimum impedance matching was implemented for maximum pixel sensitivity, enabling 5 frames-per-second image acquisition speed. As such, the THz computed tomography system generates diffraction-limited resolution cross-section images as well as the three-dimensional models of various opaque and partially transparent objects. As an example, an over-the-counter vitamin supplement pill is imaged and its material composition is reconstructed. The new THz camera enables, for the first time, a practical application of THz computed tomography for non-destructive evaluation and biomedical imaging.

It's not the pixel count, you fool

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

2012-01-01

The first thing a "marketing guy" asks the digital camera engineer is "how many pixels does it have, for we need as many mega pixels as possible since the other guys are killing us with their "umpteen" mega pixel pocket sized digital cameras. And so it goes until the pixels get smaller and smaller in order to inflate the pixel count in the never-ending pixel-wars. These small pixels just are not very good. The truth of the matter is that the most important feature of digital cameras in the last five years is the automatic motion control to stabilize the image on the sensor along with some very sophisticated image processing. All the rest has been hype and some "cool" design. What is the future for digital imaging and what will drive growth of camera sales (not counting the cell phone cameras which totally dominate the market in terms of camera sales) and more importantly after sales profits? Well sit in on the Dark Side of Color and find out what is being done to increase the after sales profits and don't be surprised if has been done long ago in some basement lab of a photographic company and of course, before its time.

JFET front-end circuits integrated in a detector-grade silicon substrate

NASA Astrophysics Data System (ADS)

Manghisoni, M.; Ratti, L.; Re, V.; Speziali, V.; Traversi, G.; Dalla Betta, G. F.; Boscardin, M.; Batignani, G.; Giorgi, M.; Bosisio, L.

2003-08-01

This paper presents the design and experimental results relevant to front-end circuits integrated on detector-grade high resistivity silicon. The fabrication technology is made available by the Istituto per la Ricerca Scientifica e Tecnologica (ITC-IRST), Trento, Italy and allows using a common substrate for different kinds of active devices, such as N-channel JFETs and MOSFETs, and for pixel, microstrip, and PIN detectors. This research activity is being carried out in the framework of a project aiming at the fabrication of a multichannel mixed analog-digital chip for the readout of solid-state detectors integrated in the same substrate. Possible applications are in the field of medical and industrial imaging and space and high energy physics experiments. An all-JFET charge sensitive amplifier, which can use either a resistive or a nonresistive feedback network, has been characterized. The two configurations have been compared to each other, paying particular attention to noise performances, in view of the design of the complete readout channel. Operation capability in harsh radiation environment has been evaluated through exposure to /spl gamma/-rays from a /sup 60/Co source.

Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gjersdal, H.; /Oslo U.; Bolle, E.

2012-05-07

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 {micro}m long pixel side, this resulting in a p-n inter-electrode distance of {approx} 71 {micro}m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, chargemore » sharing and tracking efficiency data were collected at zero and 15{sup o} angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.« less

Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

PubMed

Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

2014-07-07

Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

Sensitivity of landscape metrics to pixel size

Treesearch

J. D. Wickham; K. H. Riitters

1995-01-01

Analysis of diversity and evenness metrics using land cover data are becoming formalized in landscape ecology. Diversity and evenness metrics are dependent on the pixel size (scale) over which the data are collected. Aerial photography was interpreted for land cover and converted into four raster data sets with 4, 12, 28, and 80 m pixel sizes, representing pixel sizes...

High stroke pixel for a deformable mirror

DOEpatents

Miles, Robin R.; Papavasiliou, Alexandros P.

2005-09-20

A mirror pixel that can be fabricated using standard MEMS methods for a deformable mirror. The pixel is electrostatically actuated and is capable of the high deflections needed for spaced-based mirror applications. In one embodiment, the mirror comprises three layers, a top or mirror layer, a middle layer which consists of flexures, and a comb drive layer, with the flexures of the middle layer attached to the mirror layer and to the comb drive layer. The comb drives are attached to a frame via spring flexures. A number of these mirror pixels can be used to construct a large mirror assembly. The actuator for the mirror pixel may be configured as a crenellated beam with one end fixedly secured, or configured as a scissor jack. The mirror pixels may be used in various applications requiring high stroke adaptive optics.

Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Tehrani, N. Alipour; Arfaoui, S.; Benoit, M.; Dannheim, D.; Dette, K.; Hynds, D.; Kulis, S.; Perić, I.; Petrič, M.; Redford, S.; Sicking, E.; Valerio, P.

2016-07-01

The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at -60 V substrate bias, with a single hit resolution of 6.1 μm . Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

Design of the small pixel pitch ROIC

NASA Astrophysics Data System (ADS)

Liang, Qinghua; Jiang, Dazhao; Chen, Honglei; Zhai, Yongcheng; Gao, Lei; Ding, Ruijun

2014-11-01

Since the technology trend of the third generation IRFPA towards resolution enhancing has steadily progressed,the pixel pitch of IRFPA has been greatly reduced.A 640×512 readout integrated circuit(ROIC) of IRFPA with 15μm pixel pitch is presented in this paper.The 15μm pixel pitch ROIC design will face many challenges.As we all known,the integrating capacitor is a key performance parameter when considering pixel area,charge capacity and dynamic range,so we adopt the effective method of 2 by 2 pixels sharing an integrating capacitor to solve this problem.The input unit cell architecture will contain two paralleled sample and hold parts,which not only allow the FPA to be operated in full frame snapshot mode but also save relatively unit circuit area.Different applications need more matching input unit circuits. Because the dimension of 2×2 pixels is 30μm×30μm, an input stage based on direct injection (DI) which has medium injection ratio and small layout area is proved to be suitable for middle wave (MW) while BDI with three-transistor cascode amplifier for long wave(LW). By adopting the 0.35μm 2P4M mixed signal process, the circuit architecture can make the effective charge capacity of 7.8Me- per pixel with 2.2V output range for MW and 7.3 Me- per pixel with 2.6V output range for LW. According to the simulation results, this circuit works well under 5V power supply and achieves less than 0.1% nonlinearity.

Spectral response characterization of CdTe sensors of different pixel size with the IBEX ASIC

NASA Astrophysics Data System (ADS)

Zambon, P.; Radicci, V.; Trueb, P.; Disch, C.; Rissi, M.; Sakhelashvili, T.; Schneebeli, M.; Broennimann, C.

2018-06-01

We characterized the spectral response of CdTe sensors with different pixel sizes - namely 75, 150 and 300 μm - bonded to the latest generation IBEX single photon counting ASIC developed at DECTRIS, to detect monochromatic X-ray energy in the range 10-60 keV. We present a comparison of pulse height spectra recorded for several energies, showing the dependence on the pixel size of the non-trivial atomic fluorescence and charge sharing effects that affect the detector response. The extracted energy resolution, in terms of full width at half maximum or FWHM, ranges from 1.5 to 4 keV according to the pixel size and chip configuration. We devoted a careful analysis to the Quantum Efficiency and to the Spectral Efficiency - a newly-introduced measure that quantifies the impact of fluorescence and escape phenomena on the spectrum integrity in high- Z material based detectors. We then investigated the influence of the photon flux on the aforementioned quantities up to 180 ṡ 106 cts/s/mm2 and 50 ṡ 106 cts/s/mm2 for the 150 μm and 300 μm pixel case, respectively. Finally, we complemented the experimental data with analytical and with Monte Carlo simulations - taking into account the stochastic nature of atomic fluorescence - with an excellent agreement.

Sub-pixel image classification for forest types in East Texas

NASA Astrophysics Data System (ADS)

Westbrook, Joey

Sub-pixel classification is the extraction of information about the proportion of individual materials of interest within a pixel. Landcover classification at the sub-pixel scale provides more discrimination than traditional per-pixel multispectral classifiers for pixels where the material of interest is mixed with other materials. It allows for the un-mixing of pixels to show the proportion of each material of interest. The materials of interest for this study are pine, hardwood, mixed forest and non-forest. The goal of this project was to perform a sub-pixel classification, which allows a pixel to have multiple labels, and compare the result to a traditional supervised classification, which allows a pixel to have only one label. The satellite image used was a Landsat 5 Thematic Mapper (TM) scene of the Stephen F. Austin Experimental Forest in Nacogdoches County, Texas and the four cover type classes are pine, hardwood, mixed forest and non-forest. Once classified, a multi-layer raster datasets was created that comprised four raster layers where each layer showed the percentage of that cover type within the pixel area. Percentage cover type maps were then produced and the accuracy of each was assessed using a fuzzy error matrix for the sub-pixel classifications, and the results were compared to the supervised classification in which a traditional error matrix was used. The overall accuracy of the sub-pixel classification using the aerial photo for both training and reference data had the highest (65% overall) out of the three sub-pixel classifications. This was understandable because the analyst can visually observe the cover types actually on the ground for training data and reference data, whereas using the FIA (Forest Inventory and Analysis) plot data, the analyst must assume that an entire pixel contains the exact percentage of a cover type found in a plot. An increase in accuracy was found after reclassifying each sub-pixel classification from nine classes

Direct reading of charge multipliers with a self-triggering CMOS analog chip with 105 k pixels at 50 μm pitch

NASA Astrophysics Data System (ADS)

Bellazzini, R.; Spandre, G.; Minuti, M.; Baldini, L.; Brez, A.; Cavalca, F.; Latronico, L.; Omodei, N.; Massai, M. M.; Sgro', C.; Costa, E.; Soffitta, P.; Krummenacher, F.; de Oliveira, R.

2006-10-01

We report on a large area (15×15 mm2), high channel density (470 pixel/mm2), self-triggering CMOS analog chip that we have developed as a pixelized charge collecting electrode of a Micropattern Gas Detector. This device represents a big step forward both in terms of size and performance, and is in fact the last version of three generations of custom ASICs of increasing complexity. The top metal layer of the CMOS pixel array is patterned in a matrix of 105,600 hexagonal pixels with a 50 μm pitch. Each pixel is directly connected to the underlying full electronics chain which has been realized in the remaining five metal and single poly-silicon layers of a 0.18 μm VLSI technology. The chip, which has customizable self-triggering capabilities, also includes a signal pre-processing function for the automatic localization of the event coordinates. Thanks to these advances it is possible to significantly reduce the read-out time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. In addition to the reduced read-out time and data volume, the very small pixel area and the use of a deep sub-micron CMOS technology has allowed bringing the noise down to 50 electrons ENC. Results from in depth tests of this device when coupled to a fine pitch (50 μm on a triangular pattern) Gas Electron Multiplier are presented. It was found that matching the read-out and gas amplification pitch allows getting optimal results. The experimental detector response to polarized and unpolarized X-ray radiation when working with two gas mixtures and two different photon energies is shown and the application of this detector for Astronomical X-ray Polarimetry is discussed. Results from a full Monte-Carlo simulation for several galactic and extragalactic astronomical sources are also reported.

Dissolution of root canal sealers in EDTA and NaOCl solutions.

PubMed

Keleş, Ali; Köseoğlu, Mustafa

2009-01-01

Solutions of ethylenediaminetetraacetic acid (EDTA) and sodium hypochlorite (NaOCl) have been used as canal irrigants in endodontic treatment. The authors conducted a study to compare the ability of these solutions to dissolve sealers. The authors assessed the solubility of six sealers-calcium hydroxide, polyketone, zinc oxide-eugenol, silicone and two epoxy resins-in EDTA and two concentrations of NaOCl (2.5 percent and 5.0 percent). They immersed standardized samples (n = 5) of each sealer for two minutes and 10 minutes. They obtained the mean values of sealer dissolution in solutions by calculating the difference between the original preimmersion and postimmersion weights to determine the amount of sealer removed. They compared the values via factorial analysis of variance. They analyzed differences between the six sealers with respect to their solubility in EDTA or NaOCl solutions at two minutes and 10 minutes by using a one-way analysis of variance (P < .05). In comparison with NaOCl solutions, EDTA was markedly superior in dissolving root canal sealers (P < .05). There were no significant differences between the two concentrations of NaOCl. The two epoxy resins and the silicone-based sealer were of low solubility. The zinc oxide-eugenol-based sealer was significantly more soluble than were the epoxy resins and the silicone-based sealers. Polyketone and calcium hydroxide-based sealers were the most soluble sealers (P < .05). The results of this study indicate that during nonsurgical endodontic re-treatment, EDTA and NaOCl solutions used for removing smear layer aided in the retreatment by dissolving some root canal sealers.

Near white light emission of silicon nanocrystals

NASA Astrophysics Data System (ADS)

Lee, Soojin; Han, Il-Ki; Cho, Woon-Jo

2003-11-01

Silicon nanoparticles in the range from 2 nm to 5 nm was prepared from Zintl salt, soldium silicide (NaSi) by sonochemical method. This synthesis permits the reaction completed as fast as in a few hours and the easy alkyl-modification of nanocrystals surface at room temperature and ambient pressure. The average size of nanoparticles measured by the dynamic light scattering analysis was 2.7 nm. The high-resolution transmission electron micrograph cofirmed the material identity of nanoparticles as crystalline silicon. FT-IR spectra are consistent with the surface states of nanocrystals that is chlorine- or butyl-capped. The emission peak center moved to longer wavelength (up to 430 nm) with the reaction time, under a 325 nm excitation. The luminescence of silicon colloids looks bright bluish-white under excitation using a commercial low-intensity UV lamp.

Temperature dependence of the response of ultra fast silicon detectors

NASA Astrophysics Data System (ADS)

Mulargia, R.; Arcidiacono, R.; Bellora, A.; Boscardin, M.; Cartiglia, N.; Cenna, F.; Cirio, R.; Dalla Betta, G. F.; Durando, S.; Fadavi, A.; Ferrero, M.; Galloway, Z.; Gruey, B.; Freeman, P.; Kramberger, G.; Mandic, I.; Monaco, V.; Obertino, M.; Pancheri, L.; Paternoster, G.; Ravera, F.; Sacchi, R.; Sadrozinski, H. F. W.; Seiden, A.; Sola, V.; Spencer, N.; Staiano, A.; Wilder, M.; Woods, N.; Zatserklyaniy, A.

2016-12-01

The Ultra Fast Silicon Detectors (UFSD) are a novel concept of silicon detectors based on the Low Gain Avalanche Diode (LGAD) technology, which are able to obtain time resolution of the order of few tens of picoseconds. First prototypes with different geometries (pads/pixels/strips), thickness (300 and 50 μm) and gain (between 5 and 20) have been recently designed and manufactured by CNM (Centro Nacional de Microelectrónica, Barcelona) and FBK (Fondazione Bruno Kessler, Trento). Several measurements on these devices have been performed in laboratory and in beam test and a dependence of the gain on the temperature has been observed. Some of the first measurements will be shown (leakage current, breakdown voltage, gain and time resolution on the 300 μm from FBK and gain on the 50 μm-thick sensor from CNM) and a comparison with the theoretically predicted trend will be discussed.

Classification of multispectral image data by the Binary Diamond neural network and by nonparametric, pixel-by-pixel methods

NASA Technical Reports Server (NTRS)

Salu, Yehuda; Tilton, James

1993-01-01

The classification of multispectral image data obtained from satellites has become an important tool for generating ground cover maps. This study deals with the application of nonparametric pixel-by-pixel classification methods in the classification of pixels, based on their multispectral data. A new neural network, the Binary Diamond, is introduced, and its performance is compared with a nearest neighbor algorithm and a back-propagation network. The Binary Diamond is a multilayer, feed-forward neural network, which learns from examples in unsupervised, 'one-shot' mode. It recruits its neurons according to the actual training set, as it learns. The comparisons of the algorithms were done by using a realistic data base, consisting of approximately 90,000 Landsat 4 Thematic Mapper pixels. The Binary Diamond and the nearest neighbor performances were close, with some advantages to the Binary Diamond. The performance of the back-propagation network lagged behind. An efficient nearest neighbor algorithm, the binned nearest neighbor, is described. Ways for improving the performances, such as merging categories, and analyzing nonboundary pixels, are addressed and evaluated.

Effects of dispersion solvent on the formation of silicon nanoparticles synthesized via microemulsion route

NASA Astrophysics Data System (ADS)

Liong, W. L.; Sreekantan, S.; Hutagalung, S. D.

2010-05-01

Silicon nanoparticles are synthesized by microemulsion route. Silicon tetrachloride (SiCl4) is used as a silicon source. Meanwhile, hydrazine (N2H5OH), sodium hydroxide (NaOH), and polyethylene glycol (PEG) are used as reduction agent, stabilizer, and capping agent, respectively. In this study, the effects of different solvents (methanol, 1-butanol, 2-propanol, ethanol, acetone, and toluene) on the dispersion and the stabilization of silicon nanoparticles are studied intensively. The results in this study show that ethanol solvent has given smaller particle size, better size distribution, stable suspension and well dispersion of silicon nanoparticles. The diameter of synthesized silicon nanoparticles is in the range of 30-100 nm. Moreover, the absorption edge of silicon nanoparticles in ethanol is observed at a shorter wavelength compared to the others solvent.

Estimating Daily Evapotranspiration Based on A Model of Evapotranspiration Fraction (EF) for Mixed Pixels

NASA Astrophysics Data System (ADS)

Xin, X.; Li, F.; Peng, Z.; Qinhuo, L.

2017-12-01

Land surface heterogeneities significantly affect the reliability and accuracy of remotely sensed evapotranspiration (ET), and it gets worse for lower resolution data. At the same time, temporal scale extrapolation of the instantaneous latent heat flux (LE) at satellite overpass time to daily ET are crucial for applications of such remote sensing product. The purpose of this paper is to propose a simple but efficient model for estimating daytime evapotranspiration considering heterogeneity of mixed pixels. In order to do so, an equation to calculate evapotranspiration fraction (EF) of mixed pixels was derived based on two key assumptions. Assumption 1: the available energy (AE) of each sub-pixel equals approximately to that of any other sub-pixels in the same mixed pixel within acceptable margin of bias, and as same as the AE of the mixed pixel. It's only for a simpification of the equation, and its uncertainties and resulted errors in estimated ET are very small. Assumption 2: EF of each sub-pixel equals to the EF of the nearest pure pixel(s) of same land cover type. This equation is supposed to be capable of correcting the spatial scale error of the mixed pixels EF and can be used to calculated daily ET with daily AE data.The model was applied to an artificial oasis in the midstream of Heihe River. HJ-1B satellite data were used to estimate the lumped fluxes at the scale of 300 m after resampling the 30-m resolution datasets to 300 m resolution, which was used to carry on the key step of the model. The results before and after correction were compare to each other and validated using site data of eddy-correlation systems. Results indicated that the new model is capable of improving accuracy of daily ET estimation relative to the lumped method. Validations at 12 sites of eddy-correlation systems for 9 days of HJ-1B overpass showed that the R² increased to 0.82 from 0.62; the RMSE decreased to 1.60 MJ/m² from 2.47MJ/m²; the MBE decreased from 1.92 MJ/m² to 1

IR CMOS: near infrared enhanced digital imaging (Presentation Recording)

NASA Astrophysics Data System (ADS)

Pralle, Martin U.; Carey, James E.; Joy, Thomas; Vineis, Chris J.; Palsule, Chintamani

2015-08-01

SiOnyx has demonstrated imaging at light levels below 1 mLux (moonless starlight) at video frame rates with a 720P CMOS image sensor in a compact, low latency camera. Low light imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancements are achieved by applying Black Silicon, SiOnyx's proprietary ultrafast laser semiconductor processing technology. In the near infrared, silicon's native indirect bandgap results in low absorption coefficients and long absorption lengths. The Black Silicon nanostructured layer fundamentally disrupts this paradigm by enhancing the absorption of light within a thin pixel layer making 5 microns of silicon equivalent to over 300 microns of standard silicon. This results in a demonstrate 10 fold improvements in near infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see spot. Imaging performance metrics will be discussed. Demonstrated performance characteristics: Pixel size : 5.6 and 10 um Array size: 720P/1.3Mpix Frame rate: 60 Hz Read noise: 2 ele/pixel Spectral sensitivity: 400 to 1200 nm (with 10x QE at 1064nm) Daytime imaging: color (Bayer pattern) Nighttime imaging: moonless starlight conditions 1064nm laser imaging: daytime imaging out to 2Km

Characterization of pixelated TlBr detectors with Tl electrodes

NASA Astrophysics Data System (ADS)

Hitomi, Keitaro; Onodera, Toshiyuki; Kim, Seong-Yun; Shoji, Tadayoshi; Ishii, Keizo

2014-05-01

A 4.36-mm-thick pixelated thallium bromide (TlBr) detector with Tl electrodes was fabricated from a crystal grown by the traveling molten zone method using zone-purified material. The detector had four 1×1 mm2 pixelated anodes. The detector performance was characterized at room temperature. The mobility-lifetime products of electrons for each pixel of the TlBr detector were measured to be >2.8×10-3 cm2/V. The four pixelated anodes of the detector exhibited energy resolutions of 1.5-1.8% full width at half maximum (FWHM) for 662-keV gamma rays for single-pixel events with the depth correction method. An energy resolution of 4.5% FWHM for 662-keV gamma rays was obtained from a reconstructed energy spectrum using two-pixel events from the two pixelated anodes on the detector.

Development of Ultra-Fast Silicon Detectors for 4D tracking

NASA Astrophysics Data System (ADS)

Staiano, A.; Arcidiacono, R.; Boscardin, M.; Dalla Betta, G. F.; Cartiglia, N.; Cenna, F.; Ferrero, M.; Ficorella, F.; Mandurrino, M.; Obertino, M.; Pancheri, L.; Paternoster, G.; Sola, V.

2017-12-01

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 μm thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

Fused silicon-rich coatings for superalloys

NASA Technical Reports Server (NTRS)

Smialek, J. L.

1974-01-01

Various compositions of nickel-silicon and aluminum-silicon slurries were sprayed on IN 100 specimens and fusion-sintered to form fully dense coatings. Cyclic furnace oxidation tests in 1 atm air at 1100 C showed all the coatings to be protective for at least 600 hours, and one slurry, Al-60Si, was protective for 1000 hours. This coating also protected NASA TAZ 8A and NASA-TRW VIA for 1000 hours in the same furnace test. Alloys B 1900, TD-NiCr, and Mar-M200 were protected for lesser times, while NX 188 and NASA WAZ 20 were scarcely protected at all. Limited stress-rupture testing on 0.64-cm-diam IN 100 specimens detected no degradation of mechanical properties due to silicon diffusion.

Charge Gain, Voltage Gain, and Node Capacitance of the SAPHIRA Detector Pixel by Pixel

NASA Astrophysics Data System (ADS)

Pastrana, Izabella M.; Hall, Donald N. B.; Baker, Ian M.; Jacobson, Shane M.; Goebel, Sean B.

2018-01-01

The University of Hawai`i Institute for Astronomy has partnered with Leonardo (formerly Selex) in the development of HgCdTe linear mode avalanche photodiode (L-APD) SAPHIRA detectors. The SAPHIRA (Selex Avalanche Photodiode High-speed Infra-Red Array) is ideally suited for photon-starved astronomical observations, particularly near infrared (NIR) adaptive optics (AO) wave-front sensing. I have measured the stability, and linearity with current, of a 1.7-um (10% spectral bandpass) infrared light emitting diode (IR LED) used to illuminate the SAPHIRA and have then utilized this source to determine the charge gain (in e-/ADU), voltage gain (in uV/ADU), and node capacitance (in fF) for each pixel of the 320x256@24um SAPHIRA. These have previously only been averages over some sub-array. Determined from the ratio of the temporal averaged signal level to variance under constant 1.7-um LED illumination, I present the charge gain pixel-by-pixel in a 64x64 sub-array at the center of the active area of the SAPHIRA (analyzed separately as four 32x32 sub-arrays) to be about 1.6 e-/ADU (σ=0.5 e-/ADU). Additionally, the standard technique of varying the pixel reset voltage (PRV) in 10 mV increments and recording output frames for the same 64x64 subarray found the voltage gain per pixel to be about 11.7 uV/ADU (σ=0.2 uV/ADU). Finally, node capacitance was found to be approximately 23 fF (σ=6 fF) utilizing the aforementioned charge and voltage gain measurements. I further discuss the linearity measurements of the 1.7-um LED used in the charge gain characterization procedure.

Method for hyperspectral imagery exploitation and pixel spectral unmixing

NASA Technical Reports Server (NTRS)

Lin, Ching-Fang (Inventor)

2003-01-01

An efficiently hybrid approach to exploit hyperspectral imagery and unmix spectral pixels. This hybrid approach uses a genetic algorithm to solve the abundance vector for the first pixel of a hyperspectral image cube. This abundance vector is used as initial state in a robust filter to derive the abundance estimate for the next pixel. By using Kalman filter, the abundance estimate for a pixel can be obtained in one iteration procedure which is much fast than genetic algorithm. The output of the robust filter is fed to genetic algorithm again to derive accurate abundance estimate for the current pixel. The using of robust filter solution as starting point of the genetic algorithm speeds up the evolution of the genetic algorithm. After obtaining the accurate abundance estimate, the procedure goes to next pixel, and uses the output of genetic algorithm as the previous state estimate to derive abundance estimate for this pixel using robust filter. And again use the genetic algorithm to derive accurate abundance estimate efficiently based on the robust filter solution. This iteration continues until pixels in a hyperspectral image cube end.

An Ab Initio Study of Alkali-C60 Complexes

NASA Astrophysics Data System (ADS)

Frick, Nathan; Hira, A. S.; Ray, A. K.

2003-03-01

We extend our previous work on fullerene-alkali complexes1-2 by presenting the results of an ab initio theoretical study of the alkali LiC60+, LiC60, NaC60+, NaC60, KC60+, and KC60 complexes. In the endohedral complexes for Li and Na, there is displacement of the adatom from the center. Of the ions, exohedral Li+ will sit closest to the cage, and among the neutrals, exohedral K remains closest. Bond lengths are consistently longer for the fivefold and threefold approaches. Adsorbates inside the fullerene donate negative charge to the carbons, but ions outside obtain a small amount, resulting in a polarization of the molecule. In the ion complexes, there is lowering of the orbital energy levels by 3 to 4 eV, resulting in an increase in the number of bound, but unoccupied, electronic orbitals. The HOMO-LUMO gap, of interest in superconductivity studies, is reduced by about 50 1. A.S. Hira and A.K. Ray, Phys. Rev. A 52, 141(1995); A 54, 2205(1996). 2. Ajit Hira and A. K. Ray, "An Initio Modeling of the Endohedral and Exohedral Complexes of C60Na2+ Complexes", Bull. Am. Phys. Soc. 47 (March 2002).

A 780 × 800 μm2 Multichannel Digital Silicon Photomultiplier With Column-Parallel Time-to-Digital Converter and Basic Characterization

NASA Astrophysics Data System (ADS)

Mandai, Shingo; Jain, Vishwas; Charbon, Edoardo

2014-02-01

This paper presents a digital silicon photomultiplier (SiPM) partitioned in columns, whereas each column is connected to a column-parallel time-to-digital converter (TDC), in order to improve the timing resolution of single-photon detection. By reducing the number of pixels per TDC using a sharing scheme with three TDCs per column, the pixel-to-pixel skew is reduced. We report the basic characterization of the SiPM, comprising 416 single-photon avalanche diodes (SPADs); the characterization includes photon detection probability, dark count rate, afterpulsing, and crosstalk. We achieved 264-ps full-width at half maximum timing resolution of single-photon detection using a 48-fold column-parallel TDC with a temporal resolution of 51.8 ps (least significant bit), fully integrated in standard complementary metal-oxide semiconductor technology.

Small Pixel Hybrid CMOS X-ray Detectors

NASA Astrophysics Data System (ADS)

Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

2018-01-01

Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

Development of a process for high capacity-arc heater production of silicon

NASA Technical Reports Server (NTRS)

Reed, W. H.; Meyer, T. N.; Fey, M. G.; Harvey, F. J.; Arcella, F. G.

1978-01-01

The realization of low cost, electric power from large-area silicon, photovoltaic arrays will depend on the development of new methods for large capacity production of solar grade (SG) silicon with a cost of less than $10 per kilogram by 1986 (established Department of Energy goal). The objective of the program is to develop a method to produce SG silicon in large quantities based on the high temperature-sodium reduction of silicon tetrachloride (SiCl4) to yield molten silicon and the coproduct salt vapor (NaCl). Commercial ac electric arc heaters will be utilized to provide a hyper-heated mixture of argon and hydrogen which will furnish the required process energy. The reactor is designed for a nominal silicon flow rate of 45 kg/hr. Analyses and designs have been conducted to evaluate the process and complete the initial design of the experimental verification unit.

A new 9T global shutter pixel with CDS technique

NASA Astrophysics Data System (ADS)

Liu, Yang; Ma, Cheng; Zhou, Quan; Wang, Xinyang

2015-04-01

Benefiting from motion blur free, Global shutter pixel is very widely used in the design of CMOS image sensors for high speed applications such as motion vision, scientifically inspection, etc. In global shutter sensors, all pixel signal information needs to be stored in the pixel first and then waiting for readout. For higher frame rate, we need very fast operation of the pixel array. There are basically two ways for the in pixel signal storage, one is in charge domain, such as the one shown in [1], this needs complicated process during the pixel fabrication. The other one is in voltage domain, one example is the one in [2], this pixel is based on the 4T PPD technology and normally the driving of the high capacitive transfer gate limits the speed of the array operation. In this paper we report a new 9T global shutter pixel based on 3-T partially pinned photodiode (PPPD) technology. It incorporates three in-pixel storage capacitors allowing for correlated double sampling (CDS) and pipeline operation of the array (pixel exposure during the readout of the array). Only two control pulses are needed for all the pixels at the end of exposure which allows high speed exposure control.

Flexible amorphous silicon PIN diode x-ray detectors

NASA Astrophysics Data System (ADS)

Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory B.; Morton, David

2013-05-01

A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm x 470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370 x 470 mm) panel scale pilot line.

Correction of clipped pixels in color images.

PubMed

Xu, Di; Doutre, Colin; Nasiopoulos, Panos

2011-03-01

Conventional images store a very limited dynamic range of brightness. The true luma in the bright area of such images is often lost due to clipping. When clipping changes the R, G, B color ratios of a pixel, color distortion also occurs. In this paper, we propose an algorithm to enhance both the luma and chroma of the clipped pixels. Our method is based on the strong chroma spatial correlation between clipped pixels and their surrounding unclipped area. After identifying the clipped areas in the image, we partition the clipped areas into regions with similar chroma, and estimate the chroma of each clipped region based on the chroma of its surrounding unclipped region. We correct the clipped R, G, or B color channels based on the estimated chroma and the unclipped color channel(s) of the current pixel. The last step involves smoothing of the boundaries between regions of different clipping scenarios. Both objective and subjective experimental results show that our algorithm is very effective in restoring the color of clipped pixels. © 2011 IEEE

Polarimetric analysis of a CdZnTe spectro-imager under multi-pixel irradiation conditions

NASA Astrophysics Data System (ADS)

Pinto, M.; da Silva, R. M. Curado; Maia, J. M.; Simões, N.; Marques, J.; Pereira, L.; Trindade, A. M. F.; Caroli, E.; Auricchio, N.; Stephen, J. B.; Gonçalves, P.

2016-12-01

So far, polarimetry in high-energy astrophysics has been insufficiently explored due to the complexity of the required detection, electronic and signal processing systems. However, its importance is today largely recognized by the astrophysical community, therefore the next generation of high-energy space instruments will certainly provide polarimetric observations, contemporaneously with spectroscopy and imaging. We have been participating in high-energy observatory proposals submitted to ESA Cosmic Vision calls, such as GRI (Gamma-Ray Imager), DUAL and ASTROGAM, where the main instrument was a spectro-imager with polarimetric capabilities. More recently, the H2020 AHEAD project was launched with the objective to promote more coherent and mature future high-energy space mission proposals. In this context of high-energy proposal development, we have tested a CdZnTe detection plane prototype polarimeter under a partially polarized gamma-ray beam generated from an aluminum target irradiated by a 22Na (511 keV) radioactive source. The polarized beam cross section was 1 cm2, allowing the irradiation of a wide multi-pixelated area where all the pixels operate simultaneously as a scatterer and as an absorber. The methods implemented to analyze such multi-pixel irradiation are similar to those required to analyze a spectro-imager polarimeter operating in space, since celestial source photons should irradiate its full pixilated area. Correction methods to mitigate systematic errors inherent to CdZnTe and to the experimental conditions were also implemented. The polarization level ( 40%) and the polarization angle (precision of ±5° up to ±9°) obtained under multi-pixel irradiation conditions are presented and compared with simulated data.

Random On-Board Pixel Sampling (ROPS) X-Ray Camera

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhehui; Iaroshenko, O.; Li, S.

Recent advances in compressed sensing theory and algorithms offer new possibilities for high-speed X-ray camera design. In many CMOS cameras, each pixel has an independent on-board circuit that includes an amplifier, noise rejection, signal shaper, an analog-to-digital converter (ADC), and optional in-pixel storage. When X-ray images are sparse, i.e., when one of the following cases is true: (a.) The number of pixels with true X-ray hits is much smaller than the total number of pixels; (b.) The X-ray information is redundant; or (c.) Some prior knowledge about the X-ray images exists, sparse sampling may be allowed. Here we first illustratemore » the feasibility of random on-board pixel sampling (ROPS) using an existing set of X-ray images, followed by a discussion about signal to noise as a function of pixel size. Next, we describe a possible circuit architecture to achieve random pixel access and in-pixel storage. The combination of a multilayer architecture, sparse on-chip sampling, and computational image techniques, is expected to facilitate the development and applications of high-speed X-ray camera technology.« less

Steganography based on pixel intensity value decomposition

NASA Astrophysics Data System (ADS)

Abdulla, Alan Anwar; Sellahewa, Harin; Jassim, Sabah A.

2014-05-01

This paper focuses on steganography based on pixel intensity value decomposition. A number of existing schemes such as binary, Fibonacci, Prime, Natural, Lucas, and Catalan-Fibonacci (CF) are evaluated in terms of payload capacity and stego quality. A new technique based on a specific representation is proposed to decompose pixel intensity values into 16 (virtual) bit-planes suitable for embedding purposes. The proposed decomposition has a desirable property whereby the sum of all bit-planes does not exceed the maximum pixel intensity value, i.e. 255. Experimental results demonstrate that the proposed technique offers an effective compromise between payload capacity and stego quality of existing embedding techniques based on pixel intensity value decomposition. Its capacity is equal to that of binary and Lucas, while it offers a higher capacity than Fibonacci, Prime, Natural, and CF when the secret bits are embedded in 1st Least Significant Bit (LSB). When the secret bits are embedded in higher bit-planes, i.e., 2nd LSB to 8th Most Significant Bit (MSB), the proposed scheme has more capacity than Natural numbers based embedding. However, from the 6th bit-plane onwards, the proposed scheme offers better stego quality. In general, the proposed decomposition scheme has less effect in terms of quality on pixel value when compared to most existing pixel intensity value decomposition techniques when embedding messages in higher bit-planes.

SU-E-T-163: Characterization of a Novel High Resolution 1D Silicon Monolithic Array for Small Field Commissioning and Quality Assurance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bisello, F; IBA Dosimetry, Schwarzenbruck, DE; McGlade, J

2015-06-15

Purpose: To study the suitability of a novel 1D silicon monolithic array for dosimetry of small radiation fields and for QA of high dose gradient treatment modalities (IMRT and SBRT). Methods: A 1D array composed of 4 monolithic silicon modules of 64 mm length and 1 mm pixel pitch was developed by IBA Dosimetry. Measurements were carried out for 6MV and 15MV photons on two commercial different linacs (TrueBeam and Clinac iX, Varian Medical Systems, Palo Alto, CA) and for a CyberKnife G4 (Accuray Inc., Sunnyvale, CA). The 1D array was used to measure output factors (OF), profiles and offmore » axis correction factors (OACF) for the Iris CyberKnife variable collimator (5–60 mm). In addition, dose profiles (at the isocenter plane) were measured for multiple IMRT and SBRT treatment plans and compared with those obtained using EDR2radiographic film (Carestream Health, Rochester NY), a commercial 2D diode array and with the dose distribution calculated using a commercial TPS (Eclipse, Varian Medical Systems, Palo Alto, CA). Results: Due to the small pixel pitch of the detector, IMRT and SBRT plan profiles deviate from film measurements by less than 2%. Similarly, the 1D array exhibits better performance than the 2D diode array due to the larger (7 mm) pitch of that device. Iris collimator OFs measured using the 1D silicon array are in good agreement with the commissioning values obtained using a commercial stereotactic diode as well as with published data. Maximum deviations are < 3% for the smallest field (5 and 7.5mm) and below 1% for all other dimensions. Conclusion: We have demonstrated good performances of the array for commissioning of small photon fields and in patient QA, compared with diodes and film typically used in these clinical applications. The technology compares favorably with existing commercial solutions The presenting author is founded by a Marie Curie Early Initial Training Network Fellowship of the European Communitys Seventh Framework Programme

Scalable gamma-ray camera for wide-area search based on silicon photomultipliers array

NASA Astrophysics Data System (ADS)

Jeong, Manhee; Van, Benjamin; Wells, Byron T.; D'Aries, Lawrence J.; Hammig, Mark D.

2018-03-01

Portable coded-aperture imaging systems based on scintillators and semiconductors have found use in a variety of radiological applications. For stand-off detection of weakly emitting materials, large volume detectors can facilitate the rapid localization of emitting materials. We describe a scalable coded-aperture imaging system based on 5.02 × 5.02 cm2 CsI(Tl) scintillator modules, each partitioned into 4 × 4 × 20 mm3 pixels that are optically coupled to 12 × 12 pixel silicon photo-multiplier (SiPM) arrays. The 144 pixels per module are read-out with a resistor-based charge-division circuit that reduces the readout outputs from 144 to four signals per module, from which the interaction position and total deposited energy can be extracted. All 144 CsI(Tl) pixels are readily distinguishable with an average energy resolution, at 662 keV, of 13.7% FWHM, a peak-to-valley ratio of 8.2, and a peak-to-Compton ratio of 2.9. The detector module is composed of a SiPM array coupled with a 2 cm thick scintillator and modified uniformly redundant array mask. For the image reconstruction, cross correlation and maximum likelihood expectation maximization methods are used. The system shows a field of view of 45° and an angular resolution of 4.7° FWHM.

Microlens performance limits in sub-2mum pixel CMOS image sensors.

PubMed

Huo, Yijie; Fesenmaier, Christian C; Catrysse, Peter B

2010-03-15

CMOS image sensors with smaller pixels are expected to enable digital imaging systems with better resolution. When pixel size scales below 2 mum, however, diffraction affects the optical performance of the pixel and its microlens, in particular. We present a first-principles electromagnetic analysis of microlens behavior during the lateral scaling of CMOS image sensor pixels. We establish for a three-metal-layer pixel that diffraction prevents the microlens from acting as a focusing element when pixels become smaller than 1.4 microm. This severely degrades performance for on and off-axis pixels in red, green and blue color channels. We predict that one-metal-layer or backside-illuminated pixels are required to extend the functionality of microlenses beyond the 1.4 microm pixel node.

The spatial resolution of silicon-based electron detectors in beta-autoradiography.

PubMed

Cabello, Jorge; Wells, Kevin

2010-03-21

Thin tissue autoradiography is an imaging modality where ex-vivo tissue sections are placed in direct contact with autoradiographic film. These tissue sections contain a radiolabelled ligand bound to a specific biomolecule under study. This radioligand emits beta - or beta+ particles ionizing silver halide crystals in the film. High spatial resolution autoradiograms are obtained using low energy radioisotopes, such as (3)H where an intrinsic 0.1-1 microm spatial resolution can be achieved. Several digital alternatives have been presented over the past few years to replace conventional film but their spatial resolution has yet to equal film, although silicon-based imaging technologies have demonstrated higher sensitivity compared to conventional film. It will be shown in this work how pixel size is a critical parameter for achieving high spatial resolution for low energy uncollimated beta imaging. In this work we also examine the confounding factors impeding silicon-based technologies with respect to spatial resolution. The study considers charge diffusion in silicon and detector noise, and this is applied to a range of radioisotopes typically used in autoradiography. Finally an optimal detector geometry to obtain the best possible spatial resolution for a specific technology and a specific radioisotope is suggested.

The Belle II Silicon Vertex Detector

NASA Astrophysics Data System (ADS)

Friedl, M.; Ackermann, K.; Aihara, H.; Aziz, T.; Bergauer, T.; Bozek, A.; Campbell, A.; Dingfelder, J.; Drasal, Z.; Frankenberger, A.; Gadow, K.; Gfall, I.; Haba, J.; Hara, K.; Hara, T.; Higuchi, T.; Himori, S.; Irmler, C.; Ishikawa, A.; Joo, C.; Kah, D. H.; Kang, K. H.; Kato, E.; Kiesling, C.; Kodys, P.; Kohriki, T.; Koike, S.; Kvasnicka, P.; Marinas, C.; Mayekar, S. N.; Mibe, T.; Mohanty, G. B.; Moll, A.; Negishi, K.; Nakayama, H.; Natkaniec, Z.; Niebuhr, C.; Onuki, Y.; Ostrowicz, W.; Park, H.; Rao, K. K.; Ritter, M.; Rozanska, M.; Saito, T.; Sakai, K.; Sato, N.; Schmid, S.; Schnell, M.; Shimizu, N.; Steininger, H.; Tanaka, S.; Tanida, K.; Taylor, G.; Tsuboyama, T.; Ueno, K.; Uozumi, S.; Ushiroda, Y.; Valentan, M.; Yamamoto, H.

2013-12-01

The KEKB machine and the Belle experiment in Tsukuba (Japan) are now undergoing an upgrade, leading to an ultimate luminosity of 8×1035 cm-2 s-1 in order to measure rare decays in the B system with high statistics. The previous vertex detector cannot cope with this 40-fold increase of luminosity and thus needs to be replaced. Belle II will be equipped with a two-layer Pixel Detector surrounding the beam pipe, and four layers of double-sided silicon strip sensors at higher radii than the old detector. The Silicon Vertex Detector (SVD) will have a total sensitive area of 1.13 m2 and 223,744 channels-twice as many as its predecessor. All silicon sensors will be made from 150 mm wafers in order to maximize their size and thus to reduce the relative contribution of the support structure. The forward part has slanted sensors of trapezoidal shape to improve the measurement precision and to minimize the amount of material as seen by particles from the vertex. Fast-shaping front-end amplifiers will be used in conjunction with an online hit time reconstruction algorithm in order to reduce the occupancy to the level of a few percent at most. A novel “Origami” chip-on-sensor scheme is used to minimize both the distance between strips and amplifier (thus reducing the electronic noise) as well as the overall material budget. This report gives an overview on the status of the Belle II SVD and its components, including sensors, front-end detector ladders, mechanics, cooling and the readout electronics.

Biocompatibility evaluation of 3 facial silicone elastomers.

PubMed

França, Diurianne Caroline Campos; de Castro, Alvimar Lima; Soubhia, Ana Maria Pires; Tucci, Renata; de Aguiar, Sandra Maria Herondina Coelho Ávila; Goiato, Marcelo Coelho

2011-05-01

The failure of facial prostheses is caused by limitations in the properties of existing materials, especially the biocompatibility. This study aimed to evaluate the biocompatibility of maxillofacial silicones in subcutaneous tissue of rats. Thirty Wistar rats received subcutaneous implants of 3 maxillofacial silicone elastomers (LIM 6050, MDX 4-4210, and industrial Silastic 732 RTV). A histomorphometric evaluation was conducted to analyze the biocompatibility of the implants. Eight areas of 60.11 mm(2) from the surgical pieces were analyzed. Mesenchymal cells, eosinophils, and foreign-body giant cells were counted. Data were submitted to analysis of variance and Tukey test. Initially, all implanted materials exhibited an acceptable tissue inflammatory response, with tissue reactions varying from light to moderate. Afterward, a fibrous capsule around the silicone was observed. The silicones used in the current study presented biocompatibility and can be used for implantation in both medical and dental areas. Their prosthetic indication is conditioned to their physical properties. Solid silicone is easier to adapt and does not suffer apparent modifications inside the tissues.

Prevalence of pure versus mixed snow cover pixels across spatial resolutions in alpine environments: implications for binary and fractional remote sensing approaches

USGS Publications Warehouse

Selkowitz, David J.; Forster, Richard; Caldwell, Megan K.

2014-01-01

Remote sensing of snow-covered area (SCA) can be binary (indicating the presence/absence of snow cover at each pixel) or fractional (indicating the fraction of each pixel covered by snow). Fractional SCA mapping provides more information than binary SCA, but is more difficult to implement and may not be feasible with all types of remote sensing data. The utility of fractional SCA mapping relative to binary SCA mapping varies with the intended application as well as by spatial resolution, temporal resolution and period of interest, and climate. We quantified the frequency of occurrence of partially snow-covered (mixed) pixels at spatial resolutions between 1 m and 500 m over five dates at two study areas in the western U.S., using 0.5 m binary SCA maps derived from high spatial resolution imagery aggregated to fractional SCA at coarser spatial resolutions. In addition, we used in situ monitoring to estimate the frequency of partially snow-covered conditions for the period September 2013–August 2014 at 10 60-m grid cell footprints at two study areas with continental snow climates. Results from the image analysis indicate that at 40 m, slightly above the nominal spatial resolution of Landsat, mixed pixels accounted for 25%–93% of total pixels, while at 500 m, the nominal spatial resolution of MODIS bands used for snow cover mapping, mixed pixels accounted for 67%–100% of total pixels. Mixed pixels occurred more commonly at the continental snow climate site than at the maritime snow climate site. The in situ data indicate that some snow cover was present between 186 and 303 days, and partial snow cover conditions occurred on 10%–98% of days with snow cover. Four sites remained partially snow-free throughout most of the winter and spring, while six sites were entirely snow covered throughout most or all of the winter and spring. Within 60 m grid cells, the late spring/summer transition from snow-covered to snow-free conditions lasted 17–56 days and averaged 37

Adaptive pixel-to-pixel projection intensity adjustment for measuring a shiny surface using orthogonal color fringe pattern projection

NASA Astrophysics Data System (ADS)

Chen, Chao; Gao, Nan; Wang, Xiangjun; Zhang, Zonghua

2018-05-01

Three-dimensional (3D) shape measurement based on fringe pattern projection techniques has been commonly used in various fields. One of the remaining challenges in fringe pattern projection is that camera sensor saturation may occur if there is a large range of reflectivity variation across the surface that causes measurement errors. To overcome this problem, a novel fringe pattern projection method is proposed to avoid image saturation and maintain high-intensity modulation for measuring shiny surfaces by adaptively adjusting the pixel-to-pixel projection intensity according to the surface reflectivity. First, three sets of orthogonal color fringe patterns and a sequence of uniform gray-level patterns with different gray levels are projected onto a measured surface by a projector. The patterns are deformed with respect to the object surface and captured by a camera from a different viewpoint. Subsequently, the optimal projection intensity at each pixel is determined by fusing different gray levels and transforming the camera pixel coordinate system into the projector pixel coordinate system. Finally, the adapted fringe patterns are created and used for 3D shape measurement. Experimental results on a flat checkerboard and shiny objects demonstrate that the proposed method can measure shiny surfaces with high accuracy.

High-voltage pixel sensors for ATLAS upgrade

NASA Astrophysics Data System (ADS)

Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

2014-11-01

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

24Mg(p, α) 21Na reaction study for spectroscopy of 21Na

DOE PAGES

Cha, S. M.; Chae, K. Y.; Kim, A.; ...

2015-11-03

The Mg-24(p, alpha)Na-21 reaction was measured at the Holifield Radioactive Ion Beam Facility at Oak Ridge National Laboratory in order to better constrain the spins and parities of the energy levels in Na-21 for the astrophysically important F-17(alpha, p)Ne-20 reaction rate calculation. 31-MeV proton beams from the 25-MV tandem accelerator and enriched Mg-24 solid targets were used. When recoiling He-4 particles from the Mg-24(p, alpha)Na-21 reaction we used a highly segmented silicon detector array to detect them; it measured the yields of He-4 particles over a range of angles simultaneously. A observed a new level at 6661 ± 5 keVmore » in the present work. The extracted angular distributions for the first four levels of Na-21 and the results from distorted wave Born approximation (DWBA) calculations were compared to verify and extract the angular momentum transfer.« less

Wafer-scale pixelated detector system

DOEpatents

Fahim, Farah; Deptuch, Grzegorz; Zimmerman, Tom

2017-10-17

A large area, gapless, detection system comprises at least one sensor; an interposer operably connected to the at least one sensor; and at least one application specific integrated circuit operably connected to the sensor via the interposer wherein the detection system provides high dynamic range while maintaining small pixel area and low power dissipation. Thereby the invention provides methods and systems for a wafer-scale gapless and seamless detector systems with small pixels, which have both high dynamic range and low power dissipation.

Silicon photomultipliers for scintillating trackers

NASA Astrophysics Data System (ADS)

Rabaioli, S.; Berra, A.; Bolognini, D.; Bonvicini, V.; Bosisio, L.; Ciano, S.; Iugovaz, D.; Lietti, D.; Penzo, A.; Prest, M.; Rashevskaya, I.; Reia, S.; Stoppani, L.; Vallazza, E.

2012-12-01

In recent years, silicon photomultipliers (SiPMs) have been proposed as a new kind of readout device for scintillating detectors in many experiments. A SiPM consists of a matrix of parallel-connected pixels, which are independent photon counters working in Geiger mode with very high gain (∼106). This contribution presents the use of an array of eight SiPMs (manufactured by FBK-irst) for the readout of a scintillating bar tracker (a small size prototype of the Electron Muon Ranger detector for the MICE experiment). The performances of the SiPMs in terms of signal to noise ratio, efficiency and time resolution will be compared to the ones of a multi-anode photomultiplier tube (MAPMT) connected to the same bars. Both the SiPMs and the MAPMT are interfaced to a VME system through a 64 channel MAROC ASIC.

Pixel Paradise

NASA Technical Reports Server (NTRS)

1998-01-01

PixelVision, Inc., has developed a series of integrated imaging engines capable of high-resolution image capture at dynamic speeds. This technology was used originally at Jet Propulsion Laboratory in a series of imaging engines for a NASA mission to Pluto. By producing this integrated package, Charge-Coupled Device (CCD) technology has been made accessible to a wide range of users.

Challenges of small-pixel infrared detectors: a review.

PubMed

Rogalski, A; Martyniuk, P; Kopytko, M

2016-04-01

In the last two decades, several new concepts for improving the performance of infrared detectors have been proposed. These new concepts particularly address the drive towards the so-called high operating temperature focal plane arrays (FPAs), aiming to increase detector operating temperatures, and as a consequence reduce the cost of infrared systems. In imaging systems with the above megapixel formats, pixel dimension plays a crucial role in determining critical system attributes such as system size, weight and power consumption (SWaP). The advent of smaller pixels has also resulted in the superior spatial and temperature resolution of these systems. Optimum pixel dimensions are limited by diffraction effects from the aperture, and are in turn wavelength-dependent. In this paper, the key challenges in realizing optimum pixel dimensions in FPA design including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity are outlined to achieve a sufficiently adequate modulation transfer function for the ultra-small pitches involved. Both photon and thermal detectors have been considered. Concerning infrared photon detectors, the trade-offs between two types of competing technology-HgCdTe material systems and III-V materials (mainly barrier detectors)-have been investigated.

Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication.

PubMed

Guan, Hang; Novack, Ari; Galfsky, Tal; Ma, Yangjin; Fathololoumi, Saeed; Horth, Alexandre; Huynh, Tam N; Roman, Jose; Shi, Ruizhi; Caverley, Michael; Liu, Yang; Baehr-Jones, Thomas; Bergman, Keren; Hochberg, Michael

2018-04-02

We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a Si 3 N 4 spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production. The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across the C-band). The lowest measured linewidth is 37 kHz (<80 kHz across the C-band), which is the narrowest linewidth using a silicon-based external cavity. In addition, we successfully demonstrate all silicon-photonics-based transmission of 34 Gbaud (272 Gb/s) dual-polarization 16-QAM using our integrated laser and silicon photonic coherent transceiver. The results show no additional penalty compared to commercially available narrow linewidth tunable lasers. To the best of our knowledge, this is the first experimental demonstration of a complete silicon photonic based coherent link. This is also the first experimental demonstration of >250 Gb/s coherent optical transmission using a silicon micro-ring-based tunable laser.

Super-pixel extraction based on multi-channel pulse coupled neural network

NASA Astrophysics Data System (ADS)

Xu, GuangZhu; Hu, Song; Zhang, Liu; Zhao, JingJing; Fu, YunXia; Lei, BangJun

2018-04-01

Super-pixel extraction techniques group pixels to form over-segmented image blocks according to the similarity among pixels. Compared with the traditional pixel-based methods, the image descripting method based on super-pixel has advantages of less calculation, being easy to perceive, and has been widely used in image processing and computer vision applications. Pulse coupled neural network (PCNN) is a biologically inspired model, which stems from the phenomenon of synchronous pulse release in the visual cortex of cats. Each PCNN neuron can correspond to a pixel of an input image, and the dynamic firing pattern of each neuron contains both the pixel feature information and its context spatial structural information. In this paper, a new color super-pixel extraction algorithm based on multi-channel pulse coupled neural network (MPCNN) was proposed. The algorithm adopted the block dividing idea of SLIC algorithm, and the image was divided into blocks with same size first. Then, for each image block, the adjacent pixels of each seed with similar color were classified as a group, named a super-pixel. At last, post-processing was adopted for those pixels or pixel blocks which had not been grouped. Experiments show that the proposed method can adjust the number of superpixel and segmentation precision by setting parameters, and has good potential for super-pixel extraction.

Attenuating Stereo Pixel-Locking via Affine Window Adaptation

NASA Technical Reports Server (NTRS)

Stein, Andrew N.; Huertas, Andres; Matthies, Larry H.

2006-01-01

For real-time stereo vision systems, the standard method for estimating sub-pixel stereo disparity given an initial integer disparity map involves fitting parabolas to a matching cost function aggregated over rectangular windows. This results in a phenomenon known as 'pixel-locking,' which produces artificially-peaked histograms of sub-pixel disparity. These peaks correspond to the introduction of erroneous ripples or waves in the 3D reconstruction of truly Rat surfaces. Since stereo vision is a common input modality for autonomous vehicles, these inaccuracies can pose a problem for safe, reliable navigation. This paper proposes a new method for sub-pixel stereo disparity estimation, based on ideas from Lucas-Kanade tracking and optical flow, which substantially reduces the pixel-locking effect. In addition, it has the ability to correct much larger initial disparity errors than previous approaches and is more general as it applies not only to the ground plane.

Characterization of hydrogenated amorphous silicon films obtained from rice husk

NASA Astrophysics Data System (ADS)

Nandi, K. C.; Mukherjee, D.; Biswas, A. K.; Acharya, H. N.

1991-08-01

Hydrogenated amorphous silicon ( a-Si: H) films were prepared by chemical vapour deposition (CVD) of silanes generated by the acid hydrolysis of magnesium silicide (Mg 2Si) obtained from rice husk. The films were deposited at various substrate temperatures ( Ts) ranging from 430 to 520°C. The results show that the films have room temperature (294 K) dark conductivity (σ d) of the order of 10 -8 - 10 -10 (ohm-cm) -1 with single activation energy (Δ Ed) and the photoconductivity (σ ph) decreases with increase of Ts. Optical band gap ( Eopt) lies between 1.60-1.73 eV and hydrogen content ( CH) in the films is at best 8.3 at %. Au/ a-Si: H junction shows that it acts as a rectifier contact with Schottky barrier height ( VB) 0.69 eV. The films are contaminated by traces of impurities like Na, K, Al, Cl and O as revealed by secondary ion mass spectrometric (SIMS) analysis.

In situ REM and ex situ SPM studies of silicon (111) surface

NASA Astrophysics Data System (ADS)

Aseev, A. L.; Kosolobov, S. S.; Latyshev, A. V.; Song, Se Ahn; Saranin, A. A.; Zotov, A. V.; Lifshits, V. G.

2005-09-01

Combination of experimental methods, including ultrahigh vacuum in situ reflection electron microscopy, scanning tunnelling microscopy and atomic force microscopy, has been applied for analysis of surface structure and dynamic processes on silicon (111) surfaces during sublimation, rapid temperature cooling, oxygen reactions and metal-silicon surface phase formation. From analysis of triangular negative islands, 0.08 nm in depth, which were forming during quenching, it was deduced the effective activation energy of the island generation is equalled to 0.35 eV and made conclusion that the (1 × 1) (7 × 7) phase transition on Si(111) assumes to be responsible for the negative island nucleation. On the base of the in situ REM study, the dependence of step motion, initiated by surface vacancies generation during oxygen-silicon interaction, on the terrace width was measured. Peculiarities of the initial stages of silicon surface oxidation at low pressures were considered. From precision measurements, the top silicon atom density was determined for the metal-silicon surface phase formed during Na, Ca, Mg and Ag deposition on clean silicon (111) surface.

Fast Pixel Buffer For Processing With Lookup Tables

NASA Technical Reports Server (NTRS)

Fisher, Timothy E.

1992-01-01

Proposed scheme for buffering data on intensities of picture elements (pixels) of image increases rate or processing beyond that attainable when data read, one pixel at time, from main image memory. Scheme applied in design of specialized image-processing circuitry. Intended to optimize performance of processor in which electronic equivalent of address-lookup table used to address those pixels in main image memory required for processing.

Steganography on quantum pixel images using Shannon entropy

NASA Astrophysics Data System (ADS)

Laurel, Carlos Ortega; Dong, Shi-Hai; Cruz-Irisson, M.

2016-07-01

This paper presents a steganographical algorithm based on least significant bit (LSB) from the most significant bit information (MSBI) and the equivalence of a bit pixel image to a quantum pixel image, which permits to make the information communicate secretly onto quantum pixel images for its secure transmission through insecure channels. This algorithm offers higher security since it exploits the Shannon entropy for an image.

Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

NASA Astrophysics Data System (ADS)

Wuestling, Sascha; Fraenkle, F.; Habermehl, F.; Renschler, P.; Steidl, M.

2010-12-01

The KATRIN neutrino mass experiment is based on a precise energy measurement (Δ E/ E=5×10 -5) of electrons emerging from tritium beta decay ( Emax=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area (˜80 cm 2), a certain energy resolution (Δ E=600 eV @ 18.6 keV) but also a certain spatial resolution (˜3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm 2) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. [6], this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement [7]. The detector allows for background searches with a sensitivity as low as 1.3×10 -3 cps/cm 2 in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10 5 and the search for ultra low Penning discharge emissions.

Simple method for the growth of 4H silicon carbide on silicon substrate

NASA Astrophysics Data System (ADS)

Asghar, M.; Shahid, M. Y.; Iqbal, F.; Fatima, K.; Nawaz, Muhammad Asif; Arbi, H. M.; Tsu, R.

2016-03-01

In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat. The as grown film was characterized by XRD, FTIR, UV-Vis Spectrophotometer and Hall Measurements. The XRD pattern displayed four peaks at 2Θ angles 28.550, 32.700, 36.100 and 58.900 related to Si (1 1 1), 4H-SiC (1 0 0), 4H-SiC (1 1 1) and 4H-SiC (2 2 2), respectively. FTIR, UV-Vis spectrophotometer and electrical properties further strengthened the 4H-SiC growth.

Silicon production process evaluations

NASA Technical Reports Server (NTRS)

1982-01-01

Chemical engineering analysis was continued for the HSC process (Hemlock Semiconductor Corporation) in which solar cell silicon is produced in a 1,000 MT/yr plant. Progress and status are reported for the primary engineering activities involved in the preliminary process engineering design of the plant base case conditions (96%), reaction chemistry (96%), process flow diagram (85%), material balance (85%), energy balance (60%), property data (60%), equipment design (40%), major equipment list (30%) and labor requirements (10%). Engineering design of the second distillation column (D-02, TCS column) in the process was completed. The design is based on a 97% recovery of the light key (TCS, trichlorosilane) in the distillate and a 97% recovery of the heavy key (TET, silicon tetrachloride) in the bottoms. At a reflux ratio of 2, the specified recovery of TCS and TET is achieved with 20 trays (equilibrium stages, N=20). Respective feed tray locations are 9, 12 and 15 (NF sub 1 = 9, NF sub 2 = 12,, and NF sub 3 = 15). A total condenser is used for the distillation which is conducted at a pressure of 90 psia.

Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications.

PubMed

Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew; Shi, Linxi; Gounis, Matthew J; Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo

2016-05-01

High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54 μm. After resampling to 54 �

A low temperature solution phases synthesis for silicon quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bley, R.A.; Yang, Chung-Sung; Kauzlarich, S.M.

Silicon nanoparticles are of interest because of their optoelectronic properties. This warrants finding new methods for making these clusters which are more economical and allow for greater versatility in their mechanical and chemical manipulation. We have produced silicon nanoclusters using a low temperature solution phase method. Our approach uses the Zintl salts KSi, NaSi or Mg{sub 2}Si as the source of silicon anion, This is reacted with tetrachlorosilane, the silicon cation source, in appropriate solvents. These nanoclusters have been terminated with various organic groups via reaction with alkyl-Li or alkylgrignard reagents. High resolution TEM, FTIR, and Raman spectroscopy have beenmore » used to establish the size, structure and surface composition of the particles. UV-vis and photoluminescence have been used to investigate their optical properties. The effect of termination on the photoluminescence will be discussed in detail.« less

Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method.

PubMed

Ouertani, Rachid; Hamdi, Abderrahmen; Amri, Chohdi; Khalifa, Marouan; Ezzaouia, Hatem

2014-01-01

In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films.

Hit efficiency study of CMS prototype forward pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dongwook; /Johns Hopkins U.

2006-01-01

In this paper the author describes the measurement of the hit efficiency of a prototype pixel device for the CMS forward pixel detector. These pixel detectors were FM type sensors with PSI46V1 chip readout. The data were taken with the 120 GeV proton beam at Fermilab during the period of December 2004 to February 2005. The detectors proved to be highly efficient (99.27 {+-} 0.02%). The inefficiency was primarily located near the corners of the individual pixels.

Slip casting and nitridation of silicon powder

NASA Technical Reports Server (NTRS)

Seiko, Y.

1985-01-01

Powdered Silicon was slip-cast with a CaSO4 x 0.5H2O mold and nitrided in a N atm. containing 0 or 5 vol. % H at 1000 to 1420 deg. To remove the castings, the modeling faces were coated successively with an aq. salt soap and powdered cellulose containing Na alginate, and thus prevented the sticking problem.

Estimation of proportions in mixed pixels through their region characterization

NASA Technical Reports Server (NTRS)

Chittineni, C. B. (Principal Investigator)

1981-01-01

A region of mixed pixels can be characterized through the probability density function of proportions of classes in the pixels. Using information from the spectral vectors of a given set of pixels from the mixed pixel region, expressions are developed for obtaining the maximum likelihood estimates of the parameters of probability density functions of proportions. The proportions of classes in the mixed pixels can then be estimated. If the mixed pixels contain objects of two classes, the computation can be reduced by transforming the spectral vectors using a transformation matrix that simultaneously diagonalizes the covariance matrices of the two classes. If the proportions of the classes of a set of mixed pixels from the region are given, then expressions are developed for obtaining the estmates of the parameters of the probability density function of the proportions of mixed pixels. Development of these expressions is based on the criterion of the minimum sum of squares of errors. Experimental results from the processing of remotely sensed agricultural multispectral imagery data are presented.

Theory and applications of structured light single pixel imaging

NASA Astrophysics Data System (ADS)

Stokoe, Robert J.; Stockton, Patrick A.; Pezeshki, Ali; Bartels, Randy A.

2018-02-01

Many single-pixel imaging techniques have been developed in recent years. Though the methods of image acquisition vary considerably, the methods share unifying features that make general analysis possible. Furthermore, the methods developed thus far are based on intuitive processes that enable simple and physically-motivated reconstruction algorithms, however, this approach may not leverage the full potential of single-pixel imaging. We present a general theoretical framework of single-pixel imaging based on frame theory, which enables general, mathematically rigorous analysis. We apply our theoretical framework to existing single-pixel imaging techniques, as well as provide a foundation for developing more-advanced methods of image acquisition and reconstruction. The proposed frame theoretic framework for single-pixel imaging results in improved noise robustness, decrease in acquisition time, and can take advantage of special properties of the specimen under study. By building on this framework, new methods of imaging with a single element detector can be developed to realize the full potential associated with single-pixel imaging.

Mesoporous silicon synthesis and applications in Li-ion batteries and solar hydrogen fuel cells

DOEpatents

Wang, Donghai; Dai, Fang; Yi, Ran; Zai, Jianto

2017-05-23

We provide a mesoporous silicon material (PSi) prepared via a template-free and HF-free process. The production process is facile and scalable, and it may be conducted under mild reaction conditions. The silicon may be produced directly by the reduction of a silicon-halogenide precursor (for example, SiCl.sub.4) with an alkaline alloy (for example, NaK alloy). The resulting Si-salt matrix is then annealed for the pore formation and crystallite growth. Final product is obtained by removal of the salt by-products with water.

Analytical expressions for noise and crosstalk voltages of the High Energy Silicon Particle Detector

NASA Astrophysics Data System (ADS)

Yadav, I.; Shrimali, H.; Liberali, V.; Andreazza, A.

2018-01-01

The paper presents design and implementation of a silicon particle detector array with the derived closed form equations of signal-to-noise ratio (SNR) and crosstalk voltages. The noise analysis demonstrates the effect of interpixel capacitances (IPC) between center pixel (where particle hits) and its neighbouring pixels, resulting as a capacitive crosstalk. The pixel array has been designed and simulated in a 180 nm BCD technology of STMicroelectronics. The technology uses the supply voltage (VDD) of 1.8 V and the substrate potential of -50 V. The area of unit pixel is 250×50 μm2 with the substrate resistivity of 125 Ωcm and the depletion depth of 30 μm. The mathematical model includes the effects of various types of noise viz. the shot noise, flicker noise, thermal noise and the capacitive crosstalk. This work compares the results of noise and crosstalk analysis from the proposed mathematical model with the circuit simulation results for a given simulation environment. The results show excellent agreement with the circuit simulations and the mathematical model. The average relative error (AVR) generated for the noise spectral densities with respect to the simulations and the model is 12% whereas the comparison gives the errors of 3% and 11.5% for the crosstalk voltages and the SNR results respectively.

SVM Pixel Classification on Colour Image Segmentation

NASA Astrophysics Data System (ADS)

Barui, Subhrajit; Latha, S.; Samiappan, Dhanalakshmi; Muthu, P.

2018-04-01

The aim of image segmentation is to simplify the representation of an image with the help of cluster pixels into something meaningful to analyze. Segmentation is typically used to locate boundaries and curves in an image, precisely to label every pixel in an image to give each pixel an independent identity. SVM pixel classification on colour image segmentation is the topic highlighted in this paper. It holds useful application in the field of concept based image retrieval, machine vision, medical imaging and object detection. The process is accomplished step by step. At first we need to recognize the type of colour and the texture used as an input to the SVM classifier. These inputs are extracted via local spatial similarity measure model and Steerable filter also known as Gabon Filter. It is then trained by using FCM (Fuzzy C-Means). Both the pixel level information of the image and the ability of the SVM Classifier undergoes some sophisticated algorithm to form the final image. The method has a well developed segmented image and efficiency with respect to increased quality and faster processing of the segmented image compared with the other segmentation methods proposed earlier. One of the latest application result is the Light L16 camera.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Seshadri, S.; Cole, D. M.; Hancock, B. R.; Smith, R. M.

2008-01-01

Electronic coupling effects such as Inter-Pixel Capacitance (IPC) affect the quantitative interpretation of image data from CMOS, hybrid visible and infrared imagers alike. Existing methods of characterizing IPC do not provide a map of the spatial variation of IPC over all pixels. We demonstrate a deterministic method that provides a direct quantitative map of the crosstalk across an imager. The approach requires only the ability to reset single pixels to an arbitrary voltage, different from the rest of the imager. No illumination source is required. Mapping IPC independently for each pixel is also made practical by the greater S/N ratio achievable for an electrical stimulus than for an optical stimulus, which is subject to both Poisson statistics and diffusion effects of photo-generated charge. The data we present illustrates a more complex picture of IPC in Teledyne HgCdTe and HyViSi focal plane arrays than is presently understood, including the presence of a newly discovered, long range IPC in the HyViSi FPA that extends tens of pixels in distance, likely stemming from extended field effects in the fully depleted substrate. The sensitivity of the measurement approach has been shown to be good enough to distinguish spatial structure in IPC of the order of 0.1%.

Active-Pixel Image Sensor With Analog-To-Digital Converters

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.

1995-01-01

Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

Agglomeration of Luminescent Porous Silicon Nanoparticles in Colloidal Solutions

NASA Astrophysics Data System (ADS)

Herynková, Kateřina; Šlechta, Miroslav; Šimáková, Petra; Fučíková, Anna; Cibulka, Ondřej

2016-08-01

We have prepared colloidal solutions of clusters composed from porous silicon nanoparticles in methanol, water and phosphate-buffered saline (PBS). Even if the size of the nanoclusters is between 60 and 500 nm, due to their highly porous "cauliflower"-like structure, the porous silicon nanoparticles are composed of interconnected nanocrystals having around 2.5 nm in size and showing strong visible luminescence in the orange-red spectral region (centred at 600-700 nm). Hydrophilic behaviour and good solubility of the nanoclusters in water and water-based solutions were obtained by adding hydrogen peroxide into the etching solution during preparation and 16 min long after-bath in hydrogen peroxide. By simple filtration of the solutions with syringe filters, we have extracted smaller nanoclusters with sizes of approx. 60-70 nm; however, these nanoclusters in water and PBS solution (pH neutral) are prone to agglomeration, as was confirmed by zeta potential measurements. When the samples were left at ambient conditions for several weeks, the typical nanocluster size increased to approx. 330-400 nm and then remained stable. However, both freshly filtered and aged samples (with agglomerated porous silicon nanoparticles) of porous silicon in water and PBS solutions can be further used for biological studies or as luminescent markers in living cells.

High resolution phoswich gamma-ray imager utilizing monolithic MPPC arrays with submillimeter pixelized crystals

NASA Astrophysics Data System (ADS)

Kato, T.; Kataoka, J.; Nakamori, T.; Kishimoto, A.; Yamamoto, S.; Sato, K.; Ishikawa, Y.; Yamamura, K.; Kawabata, N.; Ikeda, H.; Kamada, K.

2013-05-01

We report the development of a high spatial resolution tweezers-type coincidence gamma-ray camera for medical imaging. This application consists of large-area monolithic Multi-Pixel Photon Counters (MPPCs) and submillimeter pixelized scintillator matrices. The MPPC array has 4 × 4 channels with a three-side buttable, very compact package. For typical operational gain of 7.5 × 105 at + 20 °C, gain fluctuation over the entire MPPC device is only ± 5.6%, and dark count rates (as measured at the 1 p.e. level) amount to <= 400 kcps per channel. We selected Ce-doped (Lu,Y)2(SiO4)O (Ce:LYSO) and a brand-new scintillator, Ce-doped Gd3Al2Ga3O12 (Ce:GAGG) due to their high light yield and density. To improve the spatial resolution, these scintillators were fabricated into 15 × 15 matrices of 0.5 × 0.5 mm2 pixels. The Ce:LYSO and Ce:GAGG scintillator matrices were assembled into phosphor sandwich (phoswich) detectors, and then coupled to the MPPC array along with an acrylic light guide measuring 1 mm thick, and with summing operational amplifiers that compile the signals into four position-encoded analog outputs being used for signal readout. Spatial resolution of 1.1 mm was achieved with the coincidence imaging system using a 22Na point source. These results suggest that the gamma-ray imagers offer excellent potential for applications in high spatial medical imaging.

Characterization of SiC Fiber (SCS-6) Reinforced-Reaction-Formed Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Singh, M.; Dickerson, R. M.

1996-01-01

Silicon carbide fiber (SCS-6) reinforced-reaction-formed silicon carbide matrix composites were fabricated using a reaction-forming process. Silicon-2 at.% niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bimodal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon, and silicon. Fiber pushout tests on these composites determined a debond stress of approximately 67 MPa and a frictional stress of approximately 60 MPa. A typical four-point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pullout.

A neighbor pixel communication filtering structure for Dynamic Vision Sensors

NASA Astrophysics Data System (ADS)

Xu, Yuan; Liu, Shiqi; Lu, Hehui; Zhang, Zilong

2017-02-01

For Dynamic Vision Sensors (DVS), thermal noise and junction leakage current induced Background Activity (BA) is the major cause of the deterioration of images quality. Inspired by the smoothing filtering principle of horizontal cells in vertebrate retina, A DVS pixel with Neighbor Pixel Communication (NPC) filtering structure is proposed to solve this issue. The NPC structure is designed to judge the validity of pixel's activity through the communication between its 4 adjacent pixels. The pixel's outputs will be suppressed if its activities are determined not real. The proposed pixel's area is 23.76×24.71μm2 and only 3ns output latency is introduced. In order to validate the effectiveness of the structure, a 5×5 pixel array has been implemented in SMIC 0.13μm CIS process. 3 test cases of array's behavioral model show that the NPC-DVS have an ability of filtering the BA.

Preliminary Results of 3D-DDTC Pixel Detectors for the ATLAS Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

La Rosa, Alessandro; /CERN; Boscardin, M.

2012-04-04

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180 GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200 {mu}m, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110 {mu}m to 150 {mu}m. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3)more » at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am{sup 241} {gamma}-ray sources, charge collection tests with Sr90 {beta}-source and an overview of preliminary results from the CERN beam test.« less

10000 pixels wide CMOS frame imager for earth observation from a HALE UAV

NASA Astrophysics Data System (ADS)

Delauré, B.; Livens, S.; Everaerts, J.; Kleihorst, R.; Schippers, Gert; de Wit, Yannick; Compiet, John; Banachowicz, Bartosz

2009-09-01

MEDUSA is the lightweight high resolution camera, designed to be operated from a solar-powered Unmanned Aerial Vehicle (UAV) flying at stratospheric altitudes. The instrument is a technology demonstrator within the Pegasus program and targets applications such as crisis management and cartography. A special wide swath CMOS imager has been developed by Cypress Semiconductor Cooperation Belgium to meet the specific sensor requirements of MEDUSA. The CMOS sensor has a stitched design comprising a panchromatic and color sensor on the same die. Each sensor consists of 10000*1200 square pixels (5.5μm size, novel 6T architecture) with micro-lenses. The exposure is performed by means of a high efficiency snapshot shutter. The sensor is able to operate at a rate of 30fps in full frame readout. Due to a novel pixel design, the sensor has low dark leakage of the memory elements (PSNL) and low parasitic light sensitivity (PLS). Still it maintains a relative high QE (Quantum efficiency) and a FF (fill factor) of over 65%. It features an MTF (Modulation Transfer Function) higher than 60% at Nyquist frequency in both X and Y directions The measured optical/electrical crosstalk (expressed as MTF) of this 5.5um pixel is state-of-the art. These properties makes it possible to acquire sharp images also in low-light conditions.

Combining light-harvesting with detachability in high-efficiency thin-film silicon solar cells.

PubMed

Ram, Sanjay K; Desta, Derese; Rizzoli, Rita; Bellettato, Michele; Lyckegaard, Folmer; Jensen, Pia B; Jeppesen, Bjarke R; Chevallier, Jacques; Summonte, Caterina; Larsen, Arne Nylandsted; Balling, Peter

2017-06-01

Efforts to realize thin-film solar cells on unconventional substrates face several obstacles in achieving good energy-conversion efficiency and integrating light-management into the solar cell design. In this report a technique to circumvent these obstacles is presented: transferability and an efficient light-harvesting scheme are combined for thin-film silicon solar cells by the incorporation of a NaCl layer. Amorphous silicon solar cells in p-i-n configuration are fabricated on reusable glass substrates coated with an interlayer of NaCl. Subsequently, the solar cells are detached from the substrate by dissolution of the sacrificial NaCl layer in water and then transferred onto a plastic sheet, with a resultant post-transfer efficiency of 9%. The light-trapping effect of the surface nanotextures originating from the NaCl layer on the overlying solar cell is studied theoretically and experimentally. The enhanced light absorption in the solar cells on NaCl-coated substrates leads to significant improvement in the photocurrent and energy-conversion efficiency in solar cells with both 350 and 100 nm thick absorber layers, compared to flat-substrate solar cells. Efficient transferable thin-film solar cells hold a vast potential for widespread deployment of off-grid photovoltaics and cost reduction.

A 400 KHz line rate 2048 pixel modular SWIR linear array for earth observation applications

NASA Astrophysics Data System (ADS)

Anchlia, Ankur; Vinella, Rosa M.; Wouters, Kristof; Gielen, Daphne; Hooylaerts, Peter; Deroo, Pieter; Ruythooren, Wouter; van der Zanden, Koen; Vermeiren, Jan; Merken, Patrick

2015-10-01

In this paper, we report about a family of linear imaging FPAs sensitive in the [0.9 - 1.7um] band, developed for high speed applications such as LIDAR, wavelength references and OCT analyzers and also for earth observation applications. Fast linear FPAs can also be used in a wide variety of terrestrial applications, including high speed sorting, electro- and photo-luminesce and medical applications. The arrays are based on a modular ROIC design concept: modules of 512 pixels are stitched during fabrication to achieve 512, 1024 and 2048 pixel arrays. In principle, this concept can be extended to any multiple of 512 pixels, the limiting factor being the pixel yield of long InGaAs arrays and the CTE differences in the hybrid setup. Each 512-pixel module has its own on-chip digital sequencer, analog readout chain and 4 output buffers. This modular concept enables a long-linear array to run at a high line rate of 400 KHz irrespective of the array length, which limits the line rate in a traditional linear array. The pixel has a pitch of 12.5um. The detector frontend is based on CTIA (Capacitor Trans-impedance Amplifier), having 5 selectable integration capacitors giving full well from 62x103e- (gain0) to 40x106e- (gain4). An auto-zero circuit limits the detector bias non-uniformity to 5-10mV across broad intensity levels, limiting the input referred dark signal noise to 20e-rms for Tint=3ms at room temperature. An on-chip CDS that follows the CTIA facilitates removal of Reset/KTC noise, CTIA offsets and most of the 1/f noise. The measured noise of the ROIC is 35e-rms in gain0. At a master clock rate of 60MHz and a minimum integration time of 1.4us, the FPAs reach the highest line rate of 400 KHz.

What controls silicon isotope fractionation during dissolution of diatom opal?

NASA Astrophysics Data System (ADS)

Wetzel, F.; de Souza, G. F.; Reynolds, B. C.

2014-04-01

The silicon isotope composition of opal frustules from photosynthesising diatoms is a promising tool for studying past changes in the marine silicon cycle, and indirectly that of carbon. Dissolution of this opal may be accompanied by silicon isotope fractionation that could disturb the pristine silicon isotope composition of diatom opal acquired in the surface ocean. It has previously been shown that dissolution of fresh and sediment trap diatom opal in seawater does fractionate silicon isotopes. However, as the mechanism of silicon isotope fractionation remained elusive, it is uncertain whether opal dissolution in general is associated with silicon isotope fractionation considering that opal chemistry and surface properties are spatially and temporally (i.e. opal of different age) diverse. In this study we dissolved sediment core diatom opal in 5 mM NaOH and found that this process is not associated with significant silicon isotope fractionation. Since no variability of the isotope effect was observed over a wide range of dissolution rates, we can rule out the suggestion that back-reactions had a significant influence on the net isotope effect. Similarly, we did not observe an impact of temperature, specific surface area, or degree of undersaturation on silicon isotope partitioning during dissolution, such that these can most likely also be ruled out as controlling factors. We discuss the potential impacts of the chemical composition of the dissolution medium and age of diatom opal on silicon isotope fractionation during dissolution. It appears most likely that the controlling mechanism of silicon isotope fractionation during dissolution is related to the reactivity, or potentially, aluminium content of the opal. Such a dependency would imply that silicon isotope fractionation during dissolution of diatom opal is spatially and temporally variable. However, since the isotope effects during dissolution are small, the silicon isotope composition of diatom opal

A novel process for recovery of iron, titanium, and vanadium from titanomagnetite concentrates: NaOH molten salt roasting and water leaching processes.

PubMed

Chen, Desheng; Zhao, Longsheng; Liu, Yahui; Qi, Tao; Wang, Jianchong; Wang, Lina

2013-01-15

A novel process for recovering iron, titanium, and vanadium from titanomagnetite concentrates has been developed. In the present paper, the treatment of rich titanium-vanadium slag by NaOH molten salt roasting and water leaching processes is investigated. In the NaOH molten salt roasting process, the metallic iron is oxidized into ferriferous oxide, MgTi(2)O(5) is converted to NaCl-type structure of Na(2)TiO(3), and M(3)O(5) (M=Ti, Mg, Fe) is converted to α-NaFeO(2)-type structure of NaMO(2), respectively. Roasting temperature and NaOH-slag mass ratio played a considerable role in the conversion of titanium in the rich titanium-vanadium slag during the NaOH molten salt roasting process. Roasting at 500 °C for 60 min and a 1:1 NaOH-slag mass ratio produces 96.3% titanium conversion. In the water leaching process, the Na(+) was exchanged with H(+), Na(2)TiO(3) is converted to undefined structure of H(2)TiO(3), and NaMO(2) is converted to α-NaFeO(2)-type structure of HMO(2). Under the optimal conditions, 87.3% of the sodium, 42.3% of the silicon, 43.2% of the aluminum, 22.8% of the manganese, and 96.6% of the vanadium are leached out. Crown Copyright © 2012. Published by Elsevier B.V. All rights reserved.

Impact of defective pixels in AMLCDs on the perception of medical images

NASA Astrophysics Data System (ADS)

Kimpe, Tom; Sneyders, Yuri

2006-03-01

With LCD displays, each pixel has its own individual transistor that controls the transmittance of that pixel. Occasionally, these individual transistors will short or alternatively malfunction, resulting in a defective pixel that always shows the same brightness. With ever increasing resolution of displays the number of defect pixels per display increases accordingly. State of the art processes are capable of producing displays with no more than one faulty transistor out of 3 million. A five Mega Pixel medical LCD panel contains 15 million individual sub pixels (3 sub pixels per pixel), each having an individual transistor. This means that a five Mega Pixel display on average will have 5 failing pixels. This paper investigates the visibility of defective pixels and analyzes the possible impact of defective pixels on the perception of medical images. JND simulations were done to study the effect of defective pixels on medical images. Our results indicate that defective LCD pixels can mask subtle features in medical images in an unexpectedly broad area around the defect and therefore may reduce the quality of diagnosis for specific high-demanding areas such as mammography. As a second contribution an innovative solution is proposed. A specialized image processing algorithm can make defective pixels completely invisible and moreover can also recover the information of the defect so that the radiologist perceives the medical image correctly. This correction algorithm has been validated with both JND simulations and psycho visual tests.

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)

2005-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Amorphous silicon thin film transistor active-matrix organic light-emitting diode displays fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Nichols, Jonathan A.

Organic light-emitting diode (OLED) displays are of immense interest because they have several advantages over liquid crystal displays, the current dominant flat panel display technology. OLED displays are emissive and therefore are brighter, have a larger viewing angle, and do not require backlights and filters, allowing thinner, lighter, and more power efficient displays. The goal of this work was to advance the state-of-the-art in active-matrix OLED display technology. First, hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) active-matrix OLED pixels and arrays were designed and fabricated on glass substrates. The devices operated at low voltages and demonstrated that lower performance TFTs could be utilized in active-matrix OLED displays, possibly allowing lower cost processing and the use of polymeric substrates. Attempts at designing more control into the display at the pixel level were also made. Bistable (one bit gray scale) active-matrix OLED pixels and arrays were designed and fabricated. Such pixels could be used in novel applications and eventually help reduce the bandwidth requirements in high-resolution and large-area displays. Finally, a-Si:H TFT active-matrix OLED pixels and arrays were fabricated on a polymeric substrate. Displays fabricated on a polymeric substrates would be lightweight; flexible, more rugged, and potentially less expensive to fabricate. Many of the difficulties associated with fabricating active-matrix backplanes on flexible substrates were studied and addressed.

Visual mining business service using pixel bar charts

NASA Astrophysics Data System (ADS)

Hao, Ming C.; Dayal, Umeshwar; Casati, Fabio

2004-06-01

Basic bar charts have been commonly available, but they only show highly aggregated data. Finding the valuable information hidden in the data is essential to the success of business. We describe a new visualization technique called pixel bar charts, which are derived from regular bar charts. The basic idea of a pixel bar chart is to present all data values directly instead of aggregating them into a few data values. Pixel bar charts provide data distribution and exceptions besides aggregated data. The approach is to represent each data item (e.g. a business transaction) by a single pixel in the bar chart. The attribute of each data item is encoded into the pixel color and can be accessed and drilled down to the detail information as needed. Different color mappings are used to represent multiple attributes. This technique has been prototyped in three business service applications-Business Operation Analysis, Sales Analysis, and Service Level Agreement Analysis at Hewlett Packard Laboratories. Our applications show the wide applicability and usefulness of this new idea.

CMOS VLSI Active-Pixel Sensor for Tracking

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

2004-01-01

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

Highly Reflective Multi-stable Electrofluidic Display Pixels

NASA Astrophysics Data System (ADS)

Yang, Shu

Electronic papers (E-papers) refer to the displays that mimic the appearance of printed papers, but still owning the features of conventional electronic displays, such as the abilities of browsing websites and playing videos. The motivation of creating paper-like displays is inspired by the truths that reading on a paper caused least eye fatigue due to the paper's reflective and light diffusive nature, and, unlike the existing commercial displays, there is no cost of any form of energy for sustaining the displayed image. To achieve the equivalent visual effect of a paper print, an ideal E-paper has to be a highly reflective with good contrast ratio and full-color capability. To sustain the image with zero power consumption, the display pixels need to be bistable, which means the "on" and "off" states are both lowest energy states. Pixel can change its state only when sufficient external energy is given. There are many emerging technologies competing to demonstrate the first ideal E-paper device. However, none is able to achieve satisfactory visual effect, bistability and video speed at the same time. Challenges come from either the inherent physical/chemical properties or the fabrication process. Electrofluidic display is one of the most promising E-paper technologies. It has successfully demonstrated high reflectivity, brilliant color and video speed operation by moving colored pigment dispersion between visible and invisible places with electrowetting force. However, the pixel design did not allow the image bistability. Presented in this dissertation are the multi-stable electrofluidic display pixels that are able to sustain grayscale levels without any power consumption, while keeping the favorable features of the previous generation electrofluidic display. The pixel design, fabrication method using multiple layer dry film photoresist lamination, and physical/optical characterizations are discussed in details. Based on the pixel structure, the preliminary

Silicon Metasurfaces for Integrated Dual Polarized 1.9 THz Heterodyne Array Instruments

NASA Astrophysics Data System (ADS)

Alonso-delPino, Maria

We propose the use of dielectric metasurfaces as the enabling technology to develop a dual polarized heterodyne receiver array with full mapping of the field of view at 1.9 THz. Current heterodyne and non-heterodyne arrays at 1.9 THz are restricted to have sparse mapping in the field of view due to the minimum physical inter-element spacing required between the pixels. Moreover, an integrated dual polarized heterodyne receiver is very difficult to achieve with current technologies at 1.9 THz. We propose the use of metasurfaces that will split the 1.9 THz radiation into two linear polarizations and focus them both on the same receiver plane. Additionally, by overlapping common regions of the metasurface we will have a full mapping of the field of view, i.e. the beams will be highly overlapped in the field of sky observation which is not the case with current generation of array instruments. The metasurface consists of a dielectric planar structure with subwavelength 3D features that controls the amplitude and phase of the electric field that goes through them. These structures are usually used in reflection in the microwave frequency range and has not been used at terahertz frequencies before. We propose the development of these metasurfaces in transmission and integrate them into a multi-pixel heterodyne receiver at 1.9 THz. The silicon micro-machining process developed at JPL allows the fabrication of high aspect ratio multi-depth features on silicon wafers and will allow the integration of both, receiver and metasurfaces, in the same wafer stack. It will lead to a more compact, low-mass, and low loss dual polarized multi-pixel receiver with efficient illumination at 1.9 THz. Even though this work will target the 1.8-2.1 THz band for the CII and OI lines, these designs can be easily scaled to at least 5 THz.

Simple method for the growth of 4H silicon carbide on silicon substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asghar, M.; Shahid, M. Y.; Iqbal, F.

In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C{sub 60} powder of high purity (99.99%) was evaporated from molybdenum boat. The as grown film was characterized by XRD, FTIR, UV-Vis Spectrophotometer and Hall Measurements. The XRD pattern displayed four peaks at 2Θ angles 28.55{sup 0}, 32.70{sup 0}, 36.10{sup 0} and 58.90{sup 0} related to Si (1 1 1), 4H-SiC (1 0 0), 4H-SiC (1 1 1) and 4H-SiC (2 2 2), respectively. FTIR, UV-Vis spectrophotometer and electrical properties further strengthenedmore » the 4H-SiC growth.« less

Access To The PMM's Pixel Database

NASA Astrophysics Data System (ADS)

Monet, D.; Levine, S.

1999-12-01

The U.S. Naval Observatory Flagstaff Station is in the process of enabling access to the Precision Measuring Machine (PMM) program's pixel database. The initial release will include the pixels from the PMM's scans of the Palomar Observatory Sky Survey I (POSS-I) -O and -E surveys, the Whiteoak Extension, the European Southern Observatory-R survey, the Science and Engineering Council-J, -EJ, and -ER surveys, and the Anglo- Australian Observatory-R survey. (The SERC-ER and AAO-R surveys are currently incomplete.) As time allows, access to the POSS-II -J, -F, and -N surveys, the Palomar Infrared Milky Way Atlas, the Yale/San Juan Southern Proper Motion survey, and plates rejected by various surveys will be added. (POSS-II -J and -F are complete, but -N was never finished.) Eventually, some 10 Tbytes of pixel data will be available. Due to funding and technology limitations, the initial interface will have only limited functionality, and access time will be slow since the archive is stored on Digital Linear Tape (DLT). Usage of the pixel data will be restricted to non-commercial, scientific applications, and agreements on copyright issues have yet to be finalized. The poster presentation will give the URL.

Perspectives of the Pixel Detector Timepix for Needs of Ion Beam Therapy

NASA Astrophysics Data System (ADS)

Martišíková, M.; Hartmann, B.; Jäkel, O.; Granja, C.; Jakubek, J.

2012-08-01

Radiation therapy with ion beams is a highly precise kind of cancer treatment. In ion beam therapy the finite range of the ion beams in tissue and the increase of ionization density at the end of their path, the Bragg-peak, are exploited. Ions heavier than protons offer in addition increased biological effectiveness and decreased scattering. In this contribution we discuss the potential of a quantum counting and position sensitive semiconductor detector Timepix for its applications in ion beam therapy measurements. It provides high sensitivity and high spatial resolution (pixel pitch 55 μm). The detector, developed by the Medipix Collaboration, consists of a silicon sensor bump bonded to a pixelated readout chip (256 × 256 pixels with 55 μm pitch). An integrated USB-based readout interface together with the Pixelman software enable registering single particles online with 2D-track visualization. The experiments were performed at the Heidelberg Ion Beam Therapy Center (HIT), which is a modern ion beam therapy facility. Patient treatments are performed with proton and carbon ions, which are accelerated by a synchrotron. For dose delivery to the patient an active technique is used: narrow pencil-like beams are scanned over the target volume. The possibility to use the detector for two different applications was investigated: ion spectroscopy and beam delivery monitoring by measurement of secondary charged particles around the patient. During carbon ion therapy, a variety of ion species is created by nuclear fragmentation processes of the primary beam. Since they differ in their biological effectiveness, it is of large interest to measure the ion spectra created under different conditions and to visualize their spatial distribution. The possibility of measurements of ion energy loss in silicon makes Timepix a promising detector for ion-spectroscopic studies in patient-like phantoms. Unpredictable changes in the patient can alter the range of the ion beam in the body

Amorphous In-Ga-Zn-O thin-film transistor active pixel sensor x-ray imager for digital breast tomosynthesis.

PubMed

Zhao, Chumin; Kanicki, Jerzy

2014-09-01

The breast cancer detection rate for digital breast tomosynthesis (DBT) is limited by the x-ray image quality. The limiting Nyquist frequency for current DBT systems is around 5 lp/mm, while the fine image details contained in the high spatial frequency region (>5 lp/mm) are lost. Also today the tomosynthesis patient dose is high (0.67-3.52 mGy). To address current issues, in this paper, for the first time, a high-resolution low-dose organic photodetector/amorphous In-Ga-Zn-O thin-film transistor (a-IGZO TFT) active pixel sensor (APS) x-ray imager is proposed for next generation DBT systems. The indirect x-ray detector is based on a combination of a novel low-cost organic photodiode (OPD) and a cesium iodide-based (CsI:Tl) scintillator. The proposed APS x-ray imager overcomes the difficulty of weak signal detection, when small pixel size and low exposure conditions are used, by an on-pixel signal amplification with a significant charge gain. The electrical performance of a-IGZO TFT APS pixel circuit is investigated by SPICE simulation using modified Rensselaer Polytechnic Institute amorphous silicon (a-Si:H) TFT model. Finally, the noise, detective quantum efficiency (DQE), and resolvability of the complete system are modeled using the cascaded system formalism. The result demonstrates that a large charge gain of 31-122 is achieved for the proposed high-mobility (5-20 cm2/V s) amorphous metal-oxide TFT APS. The charge gain is sufficient to eliminate the TFT thermal noise, flicker noise as well as the external readout circuit noise. Moreover, the low TFT (<10(-13) A) and OPD (<10(-8) A/cm2) leakage currents can further reduce the APS noise. Cascaded system analysis shows that the proposed APS imager with a 75 μm pixel pitch can effectively resolve the Nyquist frequency of 6.67 lp/mm, which can be further improved to ∼10 lp/mm if the pixel pitch is reduced to 50 μm. Moreover, the detector entrance exposure per projection can be reduced from 1 to 0

Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

PubMed Central

2014-01-01

In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films. PMID:25349554

Noise performance limits of advanced x-ray imagers employing poly-Si-based active pixel architectures

NASA Astrophysics Data System (ADS)

Koniczek, Martin; El-Mohri, Youcef; Antonuk, Larry E.; Liang, Albert; Zhao, Qihua; Jiang, Hao

2011-03-01

A decade after the clinical introduction of active matrix, flat-panel imagers (AMFPIs), the performance of this technology continues to be limited by the relatively large additive electronic noise of these systems - resulting in significant loss of detective quantum efficiency (DQE) under conditions of low exposure or high spatial frequencies. An increasingly promising approach for overcoming such limitations involves the incorporation of in-pixel amplification circuits, referred to as active pixel architectures (AP) - based on low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). In this study, a methodology for theoretically examining the limiting noise and DQE performance of circuits employing 1-stage in-pixel amplification is presented. This methodology involves sophisticated SPICE circuit simulations along with cascaded systems modeling. In these simulations, a device model based on the RPI poly-Si TFT model is used with additional controlled current sources corresponding to thermal and flicker (1/f) noise. From measurements of transfer and output characteristics (as well as current noise densities) performed upon individual, representative, poly-Si TFTs test devices, model parameters suitable for these simulations are extracted. The input stimuli and operating-point-dependent scaling of the current sources are derived from the measured current noise densities (for flicker noise), or from fundamental equations (for thermal noise). Noise parameters obtained from the simulations, along with other parametric information, is input to a cascaded systems model of an AP imager design to provide estimates of DQE performance. In this paper, this method of combining circuit simulations and cascaded systems analysis to predict the lower limits on additive noise (and upper limits on DQE) for large area AP imagers with signal levels representative of those generated at fluoroscopic exposures is described, and initial results are reported.

Full control of far-field radiation via photonic integrated circuits decorated with plasmonic nanoantennas.

PubMed

Sun, Yi-Zhi; Feng, Li-Shuang; Bachelot, Renaud; Blaize, Sylvain; Ding, Wei

2017-07-24

We theoretically develop a hybrid architecture consisting of photonic integrated circuit and plasmonic nanoantennas to fully control optical far-field radiation with unprecedented flexibility. By exploiting asymmetric and lateral excitation from silicon waveguides, single gold nanorod and cascaded nanorod pair can function as component radiation pixels, featured by full 2π phase coverage and nanoscale footprint. These radiation pixels allow us to design scalable on-chip devices in a wavefront engineering fashion. We numerically demonstrate beam collimation with 30° out of the incident plane and nearly diffraction limited divergence angle. We also present high-numerical-aperture (NA) beam focusing with NA ≈0.65 and vector beam generation (the radially-polarized mode) with the mode similarity greater than 44%. This concept and approach constitutes a designable optical platform, which might be a future bridge between integrated photonics and metasurface functionalities.

Microradiography with Semiconductor Pixel Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jakubek, Jan; Cejnarova, Andrea; Dammer, Jiri

High resolution radiography (with X-rays, neutrons, heavy charged particles, ...) often exploited also in tomographic mode to provide 3D images stands as a powerful imaging technique for instant and nondestructive visualization of fine internal structure of objects. Novel types of semiconductor single particle counting pixel detectors offer many advantages for radiation imaging: high detection efficiency, energy discrimination or direct energy measurement, noiseless digital integration (counting), high frame rate and virtually unlimited dynamic range. This article shows the application and potential of pixel detectors (such as Medipix2 or TimePix) in different fields of radiation imaging.

Research on ionospheric tomography based on variable pixel height

NASA Astrophysics Data System (ADS)

Zheng, Dunyong; Li, Peiqing; He, Jie; Hu, Wusheng; Li, Chaokui

2016-05-01

A novel ionospheric tomography technique based on variable pixel height was developed for the tomographic reconstruction of the ionospheric electron density distribution. The method considers the height of each pixel as an unknown variable, which is retrieved during the inversion process together with the electron density values. In contrast to conventional computerized ionospheric tomography (CIT), which parameterizes the model with a fixed pixel height, the variable-pixel-height computerized ionospheric tomography (VHCIT) model applies a disturbance to the height of each pixel. In comparison with conventional CIT models, the VHCIT technique achieved superior results in a numerical simulation. A careful validation of the reliability and superiority of VHCIT was performed. According to the results of the statistical analysis of the average root mean square errors, the proposed model offers an improvement by 15% compared with conventional CIT models.

Silicon nitride/silicon carbide composite powders

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-06-11

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications

PubMed Central

Shrestha, Suman; Karellas, Andrew; Shi, Linxi; Gounis, Matthew J.; Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo

2016-01-01

Purpose: High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. Methods: A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. Results: At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54 �

Characterization of Pixelated Cadmium-Zinc-Telluride Detectors for Astrophysical Applications

NASA Technical Reports Server (NTRS)

Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

2003-01-01

Comparisons of charge sharing and charge loss measurements between two pixelated Cadmium-Zinc-Telluride (CdZnTe) detectors are discussed. These properties along with the detector geometry help to define the limiting energy resolution and spatial resolution of the detector in question. The first detector consists of a 1-mm-thick piece of CdZnTe sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). Signal readout is via discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). This crystal is bonded to a custom-built readout chip (ASIC) providing all front-end electronics to each of the 256 independent pixels. These detectors act as precursors to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation.